Science.gov

Sample records for aln ceramic substrates

  1. Preparation of graphite and graphene thick film on AlN substrate

    NASA Astrophysics Data System (ADS)

    Gao, Saijie; Shen, Yue; Gu, Feng; Xu, Mengjie; Wu, Xiafan; Xu, Jindong

    2013-12-01

    High-purity AlN ceramic substrate was prepared by conventional sintering in N2 atmosphere at 1710°C for 3 hours. Measurement results of SEM, X-ray Diffraction (XRD) indicated that the AlN substrate was sintered completely, average particle size is about 1-3 μm and the porosity is very low. Graphite and graphene electrodes were obtained by simple doctor-blade coating method on AlN substrate. The samples were investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscope (SEM). Sheet resistance is measured by the four-probe method. Annealing at H2 reduction atmosphere can slow down graphitized trend of graphene and protect it's structure. The graphite electrode was applied in typical sandwich-structure DSSCs with ZnO as photoanodes, and the photoelectric conversion efficiency (η) was about 0.78%, which can be optimized and applied in DSSCs by process optimization.

  2. Fluorescence of Er3+:AlN Polycrystalline Ceramic

    DTIC Science & Technology

    2012-01-01

    using heating techniques and sintering aids such as hot pressing with Ca(NO3)2•4H2O [19], spark plasma sintering with CaF2 [20], and pressureless...Cleveland, OH, U.S.A.) to determine the levels of Er before and after sintering . The starting powders (measured using Inductively Coupled Plasma ...optical spectroscopy of Er3+ doped into bulk AlN ceramic. The material was prepared via hot press sintering of AlN with Er2O3 and [NH4][ErF4], which

  3. Thermal conductivity of single crystal and ceramic AlN

    NASA Astrophysics Data System (ADS)

    AlShaikhi, A.; Srivastava, G. P.

    2008-04-01

    We have applied the Callaway theory and used a detailed account of three-phonon scattering processes to calculate the thermal conductivity of three AlN single crystal samples containing different amounts of oxygen and two AlN ceramic samples with different grain sizes and oxygen contamination levels. The N-drift contribution to the total conductivity has been quantified. The influence on the thermal conductivity of oxygen-related defects, and grain boundaries in ceramic samples, has been investigated. The theoretical results obtained from this work are in good agreement with available experimental data. Our calculations suggest that the "effective" boundary length is greater than the reported grain size for each of the two ceramic samples studied by Watari et al. [J. Mater. Res. 17, 2940 (2002)].

  4. AlN growth on sapphire substrate by ammonia MBE

    NASA Astrophysics Data System (ADS)

    Mansurov, V. G.; Nikitin, A. Yu.; Galitsyn, Yu. G.; Svitasheva, S. N.; Zhuravlev, K. S.; Osvath, Z.; Dobos, L.; Horvath, Z. E.; Pecz, B.

    2007-03-01

    Kinetics of (0 0 0 1) Al 2O 3 surface nitridation and subsequent growth of AlN films on the sapphire substrate by ammonia molecular beam epitaxy (MBE) are investigated. Surface morphology evolution during AlN growth is studied in situ by reflection high energy electron diffraction and ex situ by atomic force microscopy. It is found that the surfaces of AlN layers thicker than 100 nm have two major features: a quite smooth background and noticeable amount of hillocks. The influence of growth conditions on the AlN surface morphology is studied in order to find a way for reducing of the hillocks density. A modification of nitridated sapphire surface by small amount of Al (1-2 monolayers) with subsequent treatment of the surface under ammonia flux is proposed. An improvement of AlN surface morphology of the layers grown on the modified surfaces is demonstrated.

  5. Enhanced blue emission of ZnO films deposited on AlN substrates

    NASA Astrophysics Data System (ADS)

    Ding, Jijun; Chen, Haixia; Fu, Haiwei

    2017-06-01

    Taking into account the individual excellent optical properties of ZnO and AlN, the combination of ZnO with AlN may give the enhanced performances. Based on similar lattice constants between ZnO and AlN, considering that AlN is a promising high power integrated circuit substrate material, ZnO films are deposited on AlN substrates using magnetron sputtering. We find that AlN substrate shows an excellent transparency with an average transmittance of about 80%. As ZnO films are deposited on AlN substrate, average transmittance still maintain above 80% except for the UV absorption edge shifted to the longer wavelength. In addition, AlN substrate shows two emission peaks at 420 and 468 nm ascribed to Al vacancies with different charge states. As ZnO films are deposited on AlN substrates in pure Ar gas, the intensity of both peaks attain the maximum. After introducing O2 gas, they conversely decreases and attains the minimum. PL emissions increase again as the sample is annealed in vacuum. Excellent blue emissions are obtained due to the synergistic effect between ZnO and AlN. This work may help the development of the practical optoelectronic devices based on ZnO and AlN materials.

  6. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

    SciTech Connect

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhou, Shizhong; Lin, Zhiting; Li, Guoqiang

    2015-05-14

    AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.

  7. Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Rice, A.; Collazo, R.; Tweedie, J.; Dalmau, R.; Mita, S.; Xie, J.; Sitar, Z.

    2010-08-01

    Chemical surface treatments were conducted on mechanically polished (MP) and chemomechanically polished (CMP) (0001)-oriented single crystalline aluminum nitride (AlN) substrates to determine a surface preparation procedure for the homoepitaxial deposition of AlN epitaxial layers by metalorganic chemical vapor deposition. MP AlN substrates characterized by atomic force microscopy exhibited 0.5 nm rms roughness and polishing scratches, while CMP AlN substrates exhibited 0.1 nm rms roughness and were scratch-free. X-ray photoelectron spectroscopy analysis of MP and CMP AlN substrates indicated the presence of a surface hydroxide layer composed of mixed aluminum oxide hydroxide and aluminum trihydroxide. Wet etching with sulfuric and phosphoric acid mixtures reduced the amount of surface hydroxide. Ammonia annealing at 1250 °C converted the substrate hydroxide layer to AlN and increased the rms roughness of MP and CMP AlN substrates to 2.2 nm and 0.2 nm, respectively. AlN epitaxial layers were deposited at 1100-1250 °C under 20 Torr total pressure with a V/III ratio of 180-300 in either N2 or H2 diluent. High-resolution x-ray diffraction measurements revealed that AlN epitaxial layers deposited on MP substrates were strained due to nucleation and coalescence of AlN grains on the mechanically damaged surfaces. AlN deposited on CMP substrates was epitaxial and strain-free. Thermodynamic models for nitridation and AlN deposition were also proposed and evaluated.

  8. Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

    NASA Astrophysics Data System (ADS)

    Kumagai, Yoshinao; Enatsu, Yuuki; Ishizuki, Masanari; Kubota, Yuki; Tajima, Jumpei; Nagashima, Toru; Murakami, Hisashi; Takada, Kazuya; Koukitu, Akinori

    2010-09-01

    Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50-200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H 2 and NH 3, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10 8 cm -2.

  9. AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy.

    PubMed

    Tamura, Yosuke; Hane, Kazuhiro

    2015-12-01

    AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec.

  10. Epitaxial growth of AlN films on single-crystalline Ta substrates

    SciTech Connect

    Hirata, S.; Okamoto, K.; Inoue, S. Kim, T-W.; Ohta, J.; Fujioka, H.; Oshima, M.

    2007-08-15

    We have demonstrated the first epitaxial growth of AlN films on single-crystalline Ta substrates by the use of a low-temperature growth technique based on pulsed laser deposition (PLD). Although previous AlN films grown on Ta(100) and (111) substrates have exhibited quite poor crystallinity, an epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112-bar 0]//Ta[001] has been obtained on a Ta(110) substrate at a growth temperature of 450 deg. C. We found that the full-width at half-maximum values for the crystal orientation distribution in the tilt and twist directions of the AlN film were 0.37{sup o} and 0.41{sup o}, respectively. Grazing-incidence X-ray reflection (GIXR) and X-ray photoelectron spectroscopy (XPS) measurements have revealed that the AlN/Ta heterointerface is quite abrupt, and that its abruptness remains unchanged even after annealing at 1000 deg. C. - Graphical abstract: An epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112-bar 0]//Ta[001] has been obtained for the first time on a Ta(110) substrate by the use of a PLD low-temperature growth technique.

  11. MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

    NASA Astrophysics Data System (ADS)

    E, Yanxiong; Hao, Zhibiao; Yu, Jiadong; Wu, Chao; Liu, Runze; Wang, Lai; Xiong, Bing; Wang, Jian; Han, Yanjun; Sun, Changzheng; Luo, Yi

    2015-10-01

    By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

  12. Synthesis of c-axis oriented AlN thin films on different substrates: A review

    SciTech Connect

    Iriarte, G.F.

    2010-09-15

    Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N{sub 2} gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

  13. High-quality AlN epitaxy on sapphire substrates with sputtered buffer layers

    NASA Astrophysics Data System (ADS)

    Zhang, Lisheng; Xu, Fujun; Wang, Mingxing; Sun, Yuanhao; Xie, Nan; Wang, Tao; Dong, Boyu; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2017-05-01

    In this work, a novel strategy for high-quality AlN templates epitaxy on sapphire substrates with sputtered buffer layers combined with a low- and high-temperature alteration technique is proposed. The best full width at half maximum values for (0002) and (1 1 bar 02) reflections are 207 and 377 arcsec, respectively. Investigations indicate the joint effect of growth mode control and sputtered buffer layer results in the improvement of AlN crystalline quality. Firstly, threading dislocations density can be significantly decreased due to the alteration from three-dimensional to two-dimensional growth mode. Moreover, the graded composition of AlON layer in the sputtered buffer layer is believed to alleviate lattice mismatch between sapphire substrates and AlN, which also contributes to low dislocations density in AlN templates.

  14. High-quality AlN template grown on a patterned Si(111) substrate

    NASA Astrophysics Data System (ADS)

    Tran, Binh Tinh; Hirayama, Hideki; Jo, Masafumi; Maeda, Noritoshi; Inoue, Daishi; Kikitsu, Tomoka

    2017-06-01

    To obtain a high-quality AlN template on a Si substrate for high-quantum efficiency AlGaN-based deep-UV LED applications, we fabricated a high-density micro-patterned Si(111) substrate. An about 8-μm-thick AlN template was grown on the Si(111) substrate in a metal-organic chemical vapor deposition reactor by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth methods. The template had a small X-ray full width at half-maximum with rocking curves of 620 and 1141″ for the symmetric and asymmetric (002 and 102) planes. A threading dislocation density at the best region as low as 107 cm-2 was also obtained.

  15. Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Funato, Mitsuru; Shibaoka, Mami; Kawakami, Yoichi

    2017-02-01

    We investigate the metalorganic vapor phase epitaxy of c-oriented AlN on c- and a-plane sapphire substrates, focusing on the effect of sapphire nitridation on the AlN structure. Prior to AlN growth, the sapphire surface is subjected to nitridation via an in-situ NH3 treatment. We demonstrate that nitridation without H2 thermal etching treatment realizes high quality AlN on both c- and a-plane sapphires, indicating that a reaction between NH3 and oxygen on the sapphire surface is a critical factor in the material growth. It is proposed that nitridation initially creates nanometer-scale inversion domains in the AlN epilayer, but as growth proceeds, the N-polar domains are annihilated, leaving voids. Such growth behaviors can be regarded as spontaneous selective area growth with strain-adsorbing void formation, and lead to crack-free, ˜5 μm thick AlN layers, which produce x-ray line widths as narrow as 180 and 483 arc sec for the (0002) and ( 10 1 ¯ 2 ) reflections, respectively, on c-plane sapphire, and 237 and 433 arc sec for these reflections on a-plane sapphire.

  16. Investigation of AlN thin film growth on MgO(111) substrates using low temperature helicon sputtering system

    NASA Astrophysics Data System (ADS)

    Hsu, Wei-Fan; Kao, Hui-Ling; Lin, Zih-Ping

    2016-02-01

    An aluminum nitride (AlN) thin film has been grown on annealed magnesium oxide (MgO) (111)-plane substrate using low temperature helicon sputtering system. Both AlN films on as-received and annealed MgO(111) substrate are single crystalline with AlN[0001] || MgO[111]. X-ray rocking curve shows that AlN film on annealed MgO exhibits superior crystalline quality, which means more suitable for AlN crystal growth. Two different growths were found for the deposition of AlN on annealed MgO. It is believed that the partially recovered substrate surface caused by annealing process provides atomic smooth surface terraces with small lattice mismatch for AlN crystal to grow in 2D mode, enhance grain size, and thus reduce the dislocation density. This is the first time demonstrated for the growth mechanism of single crystal AlN thin film prepared on MgO(111) by sputtering system.

  17. AlN texturing and piezoelectricity on flexible substrates for sensor applications

    SciTech Connect

    Smecca, Emanuele; Pellegrino, Giovanna; Alberti, Alessandra; Maita, Francesco; Maiolo, Luca; Fortunato, Guglielmo; Vinciguerra, Vincenzo; La Magna, Luigi; Mirabella, Salvo; Condorelli, Guglielmo G.

    2015-06-08

    We show that AlN-based piezocapacitors with relatively high piezoelectric coefficient (d{sub 33}) values (3–4 pC/N) can be fabricated on polyimide (PI) substrates at 160 °C or even at room temperature by sputtering processes. With respect to PI, a reduction of the piezoelectric performances was observed on polyethylene naphthalate (PEN). With the same approach, a d{sub 33} value as high as 8 pC/N was achieved on rigid substrates (SiO{sub 2}/Si). In all cases, a thin Al buffer layer was deposited, immediately before AlN, without breaking the vacuum in the deposition chamber, in order to preserve the interface from contaminations that would obstruct the optimal atomic stratification with the desired [0001] growth axis. The piezoelectric behavior was thus correlated to the degree of texturing of the AlN layer through the evaluation of the XRD texturing coefficients and to the morphology by means of AFM analyses. We show that a high level of roughness introduced by the PEN substrate, coupled with the effect of the substrate flexibility on the piezoelectric coefficient, reduces the impact of the AlN texturing on the d{sub 33} values.

  18. Adhesion strength and nucleation thermodynamics of four metals (Al, Cu, Ti, Zr) on AlN substrates

    NASA Astrophysics Data System (ADS)

    Tao, Yuan; Ke, Genshui; Xie, Yan; Chen, Yigang; Shi, Siqi; Guo, Haibo

    2015-12-01

    Devices based on AlN generally require adherent and strong interfaces between AlN and other materials, whereas most metals are known to be nonwetting to AlN and form relatively weak interfaces with AlN. In this study, we selected four representative metals (Al, Cu, Ti, and Zr) to study the adhesion strength of the AlN/metal interfaces. Mathematical models were constructed between the adhesion strength and enthalpy of formation of Al-metal solid solutions, the surface energies of the metals, and the lattice mismatch between the metals and AlN, based on thermodynamic parameters calculated using density functional theory. It appears that the adhesion strength is mainly determined by the lattice mismatch, and is in no linear correlation with either the Al-metal solution's formation enthalpies or the metals' surface energies. We also investigated the nucleation thermodynamics of the four metals on AlN substrates. It was found that Ti forms the strongest interface with AlN, and has the largest driving force for nucleation on AlN substrates among the four metals.

  19. High free carrier concentration in p-GaN grown on AlN substrates

    NASA Astrophysics Data System (ADS)

    Sarkar, Biplab; Mita, Seiji; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Tweedie, James; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

    2017-07-01

    A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm-3 and resistivity as low as 0.7 Ω cm are reported for p-GaN layers grown by metalorganic vapor phase epitaxy on single crystal AlN substrates. Temperature dependent Hall measurements confirmed a much lower activation energy, 60-80 mV, for p-GaN grown on AlN as compared to sapphire substrates; the lowering of the activation energy was due to screening of Coulomb potential by free carriers. It is also shown that a higher doping density (more than 5 × 1019 cm-3) can be achieved in p-GaN/AlN without the onset of self-compensation.

  20. Deposition of AlN on WS{sub 2} (0001) substrate by atomic layer growth process

    SciTech Connect

    Chung, J.W.; Ohuchi, F.S.

    1997-12-31

    Close proximity of the lattice constant for tungsten disulfide and aluminum nitride has lead to an investigation to use WS{sub 2} as a potential substrate for the growth of AlN. Metal organic chemical vapor deposition (MOCVD) has been developed to fabricated WS{sub 2} thin films on Si(001) with their basal planes parallel to the substrate. AlN thin film was subsequently grown by atomic layer growth (ALG) process using dimethylamine-alane (DMEAA) and ammonia (NH{sub 3}). Deposition conditions for WS2 thin films by MOCVD, and AlN growth on WS2 by ALG are described.

  1. Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (1 1 1) substrates

    NASA Astrophysics Data System (ADS)

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Lin, Yunhao; Zhou, Shizhong; Qian, Huirong; Gao, Fangliang; Yang, Hui; Li, Guoqiang

    2014-03-01

    The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (1 1 1) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (1 1 1) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (1 1 1) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within ∼321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes.

  2. Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tarala, V. A.; Altakhov, A. S.; Ambartsumov, M. G.; Martens, V. Ya.

    2017-01-01

    The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exposures longer than 20 s was 2.03 ± 0.03. The (0002) and (0004) reflections at 2Θ angles of 35.7° and 75.9° were present in the X-ray diffraction patterns of these samples. These reflections are typical of the hexagonal AlN polytype. The full width at half maximum of the rocking curve of reflection (0002) in the best sample was 162 ± 11 arcsec.

  3. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    NASA Astrophysics Data System (ADS)

    Sun, Haiding; Wu, Feng; tahtamouni, T. M. Al; Alfaraj, Nasir; Li, Kuang-Hui; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-10-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0 0 0 1) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  4. GaN on Silicon Substrate with AlN Buffer Layer for UV Photodiode

    NASA Astrophysics Data System (ADS)

    Chuah, L. S.; Thahab, S. M.; Hassan, Z.

    Nitrogen plasma-assisted molecular beam epitaxy (PAMBE) deposited GaN thin films on (111) n-type silicon substrate with different thickness AlN buffer layers are investigated and distinguished by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman scattering. The thickness of AlN buffer layer ranged from 200 nm to 300 nm. Besides that, the electrical characteristics of the GaN thin film for ultraviolet detecting utilizations are studied by calculating the photo current/dark current ratio on a metal-semiconductor-metal (MSM) photodiode with and without the illumination of Hg-lamp source. The devices have been tested over room temperature (RT). The photocurrent analysis, together with the study of Schottky barrier height (SBH) development, ascertain that the principal mechanism of photo transport is thermionic emission. The photocurrent value is rigorously dependent on Schottky barrier height. The GaN/AlN(200 nm)/n-Si MSM photodiode produces the highest photo/dark current ratio for the lowest strain that consists of the GaN film grown on the AlN (200 nm) buffer layer.

  5. Infrared blocking, microwave and terahertz low-loss transmission AlN films grown on flexible polymeric substrates

    NASA Astrophysics Data System (ADS)

    Rudenko, E.; Tsybrii, Z.; Sizov, F.; Korotash, I.; Polotskiy, D.; Skoryk, M.; Vuichyk, M.; Svezhentsova, K.

    2017-04-01

    Aluminum nitride (AlN) film coatings on flexible substrates (polymeric Teflon, Mylar) have been obtained using a hybrid helicon-arc ion-plasma deposition technique with high adhesion of coatings. Studies of optical, morphological, and structural properties of AlN films have been carried out. It was found that AlN coatings on Teflon and Mylar thin-film substrates substantially suppress transmission of infrared (IR) radiation within the spectral range λ ˜ 5-20 μm at certain technological parameters and thickness of AlN. Transmission in THz regions by using quasioptics attains T ≈ 79%-95%, and losses measured in the channels within the microwave region 2 to 36 GHz are <0.06 dB. The obtained composite structures (AlN coatings on Teflon and Mylar thin-film substrates), due to a high thermal conductivity of AlN, could be used as efficient blocking structures in the infrared spectral range ("infrared stealth") withdrawing the heat from filters warmed by IR radiation. At the same time, they can be used as the transparent ones in the microwave and THz regions, which can be important for low-temperature detector components of navigation, positioning, and telecommunication systems due to reducing the background noise.

  6. Interfacial reactions between AlN substrate and 4-A family elements

    SciTech Connect

    Du, Y.; He, X.; Tao, K.

    1996-12-31

    Aluminum Nitride (AlN) has been taken into great consideration recently as a promising material in microelectronic packaging. Interfacial reactions between AlN substrate and 4A-family elements including Ti, Zr and Hf were studied. The samples were prepared by Physical Vapor Deposition and annealed at different temperatures from 200 C to 800 C. X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) were employed to detect the compounds formed at the interfaces between them. For Ti/AlN system, when the samples were annealed from 600 C to 800 C for 1 hour, it was found from XRD patterns that TiAl{sub 3}, TiN, and Ti{sub 4}N{sub 3{minus}x} including Ti{sub 2}N were formed at Ti/AlN interface. With the temperature increasing, the intensities of Ti, TiN(200), Ti{sub 2}N and Ti{sub 4}N{sub 3{minus}x} diffraction peaks decreased while that of TiAl{sub 3} and TiN(111) increased. For Zr/AlN system, it was found that the reactions between Zr and AlN resulted in the formation of Al{sub 3}Zr at about 300 C and Al{sub 2}Zr at about 500 C. According to RBS spectra, it can be assumed that Al{sub 3}Zr was the direct product by the reaction between AlN and Zr and Al{sub 2}Zr was formed by the reaction between Al{sub 3}Zr and Zr. For Hf/AlN system, however, even the sample was annealed at 800 C, no compound resulted from interfacial reactions was detected.

  7. Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications

    PubMed Central

    Tran, Binh Tinh; Maeda, Noritoshi; Jo, Masafumi; Inoue, Daishi; Kikitsu, Tomoka; Hirayama, Hideki

    2016-01-01

    An AlN template layer is required for growth of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs). However, the crystal quality of AlN templates grown on both flat and patterned Si substrates has so far been insufficient for replacing templates grown on sapphire substrates. In this work, we grew a high-quality AlN template on 2 in. micro-circle-patterned Si substrate (mPSiS) with two different sizes and shapes through controlling the bias power of inductively coupled plasma (ICP) etching. The experimental results showed that the best AlN template was obtained on a large pattern size with a bow-angle shape and the template had X-ray rocking curves with full widths at half-maximum of 620 and 1141 arcsec for the (002) and (102) reflection planes. The threading dislocation density near surface of AlN template through transmission electron microscopy (TEM) estimation was in the order of 107 cm−2, which is the lowest dislocation density reported for a Si substrate to our knowledge. A strong single electroluminescence (EL) peak was also obtained for an AlGaN-based deep UV-LED grown on this template, means that it can be used for further developing high-efficiency deep UV-LEDs. PMID:27819331

  8. Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications

    NASA Astrophysics Data System (ADS)

    Tran, Binh Tinh; Maeda, Noritoshi; Jo, Masafumi; Inoue, Daishi; Kikitsu, Tomoka; Hirayama, Hideki

    2016-11-01

    An AlN template layer is required for growth of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs). However, the crystal quality of AlN templates grown on both flat and patterned Si substrates has so far been insufficient for replacing templates grown on sapphire substrates. In this work, we grew a high-quality AlN template on 2 in. micro-circle-patterned Si substrate (mPSiS) with two different sizes and shapes through controlling the bias power of inductively coupled plasma (ICP) etching. The experimental results showed that the best AlN template was obtained on a large pattern size with a bow-angle shape and the template had X-ray rocking curves with full widths at half-maximum of 620 and 1141 arcsec for the (002) and (102) reflection planes. The threading dislocation density near surface of AlN template through transmission electron microscopy (TEM) estimation was in the order of 107 cm‑2, which is the lowest dislocation density reported for a Si substrate to our knowledge. A strong single electroluminescence (EL) peak was also obtained for an AlGaN-based deep UV-LED grown on this template, means that it can be used for further developing high-efficiency deep UV-LEDs.

  9. Strained GaN quantum-well FETs on single crystal bulk AlN substrates

    NASA Astrophysics Data System (ADS)

    Qi, Meng; Li, Guowang; Ganguly, Satyaki; Zhao, Pei; Yan, Xiaodong; Verma, Jai; Song, Bo; Zhu, Mingda; Nomoto, Kazuki; Xing, Huili Grace; Jena, Debdeep

    2017-02-01

    We report the first realization of molecular beam epitaxy (MBE) grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two-dimensional electron gas (2DEG) density in the excess of 2 × 1013/cm2. The ohmic contacts to the 2DEG channel were formed by the n+ GaN MBE regrowth process, with a contact resistance of 0.13 Ω . mm. The Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well and strain relaxation in the regrown GaN contacts. A 65-nm-long rectangular-gate device showed a record high DC drain current drive of 2.0 A/mm and peak extrinsic transconductance of 250 mS/mm. Small-signal RF performance of the device achieved the current gain cutoff frequency fT˜120 GHz. The DC and RF performances demonstrate that bulk AlN substrates offer an attractive alternative platform for strained quantum well nitride transistors for the future high-voltage and high-power microwave applications.

  10. Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate

    DOEpatents

    Kline, Gerald R.; Lakin, Kenneth M.

    1985-12-03

    A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers.

  11. Direct selective metallization of AlN ceramics induced by laser radiation

    NASA Astrophysics Data System (ADS)

    Antończak, Arkadiusz J.; Kozioł, Paweł E.; Stepak, Bogusz; Szymczyk, Patrycja; Abramski, Krzysztof M.

    2014-03-01

    Aluminum nitride (AlN) ceramics has a unique characteristic, namely the ability to form conductive structures on its surface directly by laser-induced decomposition of the base material. Various research has been carried out on obtaining low-ohmic structures depending on process parameters such as the laser power, overlap of subsequent pulses and the type of shielding gas (air, nitrogen and argon). This paper focuses on explaining which factors have the greatest impact on the resistance (resistivity) value of obtained structures. In order to explain the effect of the laser fluence (below and above the ablation threshold of aluminum nitride) on the chemical structure of the conductive layers, qualitative EDX analyses were performed. Optimization of the process allowed obtaining a resistivity of the conductive layers at a level of ρ = 0.64·10-6 Ω·m, with a thickness of aluminum up to 10 μm (sheet resistance RS = 10 mΩ/Sr). This technology can be useful in making printed circuit boards (PCB), various types of sensors as well as radio-frequency identification (RFID) and Lab-On-a-Chip (LOC) structures. This technology can also be useful for the production of metamaterials.

  12. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Tamaki, Shinya; Yamashita, Yasuhiro; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-08-01

    10-µm-thick a-plane AlN(11\\bar{2}0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire (1\\bar{1}02) substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlN(11\\bar{2}0)\\parallel [1\\bar{1}00]AlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer.

  13. Imaging and spectroscopy of secondary electrons from AlN and β-SiAlON ceramics using fountain detector

    NASA Astrophysics Data System (ADS)

    Cho, Yujin; Sekiguchi, Takashi; Kimura, Takashi; Iwai, Hideo

    2016-11-01

    To clarify the bright contrast of insulating ceramics in secondary electron (SE) image taken using scanning electron microscopy (SEM), the low-pass secondary electron signals and images of conductive AlN and insulating β-SiAlON powders taken by fountain detector (FD) were inspected. It was found that the background component of β-SiAlON is originally strong. This component may come from the SE acceleration according to the charging. The low energy SEs of 5-20 eV were strong in AlN particles. According to the wide acceptance angle of FSED, we could not detect clear energy shift in SE spectra. These observations suggest that the bright contrast of insulating materials is not an intrinsic character of insulators but the SE3 contribution.

  14. Substrate Heating Effect on c-Axis Texture and Piezoelectric Properties of AlN Thin Films Deposited by Unbalanced Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood; Lin, Jianliang

    2016-06-01

    Aluminum nitride (AlN) thin films with highly preferred (002) orientations have been reactively deposited by a pulsed-closed field unbalanced magnetron sputtering system using TiN/Ti as the seed/adhesion layer with various substrate temperatures. The texture, orientation and piezoelectric properties of AlN films were characterized by means of x-ray diffraction, rocking curves and laser interferometry. A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. It was found that a slight substrate temperature increase would significantly affect the (002) orientation and the piezoelectric coefficient of AlN thin films compared to the coating obtained with no intentional substrate heating, while higher temperature applications on substrate deteriorated the c-axis texture of the coatings without significant improvement in the piezoelectric response of AlN films.

  15. Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

    SciTech Connect

    Wang, Q.; Zhao, S.; Connie, A. T.; Shih, I.; Mi, Z.; Gonzalez, T.; Andrews, M. P.; Du, X. Z.; Lin, J. Y.; Jiang, H. X.

    2014-06-02

    The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.

  16. Spark Plasma Sintering of AlN Ceramics and Surface Metallization by Refractory Metal of Ti, Nb, Mo, Ta or W at Low Temperature

    NASA Astrophysics Data System (ADS)

    Kai, Ayako; Johkoh, Naoji; Miki, Toshikatsu

    2003-06-01

    Aluminum nitride (AlN) powder with no additives was sintered successfully at 1200°C in low-pressure N2 gas using a spark plasma sintering (SPS) process. The density value of the resultant ceramic is as high as 95% of the theoretical one. No openings were left in the grain boundary. If AlN powder is sandwiched by refractory metal (Ti, Nb, Mo, Ta and W) foils during SPS, one obtains AlN ceramics metallized by the refractory metals even at 1200°C. The adhesion strength of Ti, Mo or W to AlN ceramics is sufficiently high, but that of Nb or Ta is low. The characterization of metal/AlN interfaces by X-ray diffractometory (XRD), scanning electron microscopy (SEM) and electron-probe microanalysis (EPMA) has revealed the formation of a thin reaction layer at the Ti/AlN interface, which may be the reason for the high adhesion strength of the Ti/AlN interface. The high adhesion strengths of Mo/AlN and W/AlN might also be associated with thinner metal/AlN reaction layers, which were unfortunately undetectable in our XRD data. The weak adhesion of Nb/AlN and Ta/AlN interfaces was elucidated by large differences in the thermal-expansion coefficient between metallic Nb or Ta and the AlN ceramics.

  17. Radiative Properties of Ceramic Al2O3, AlN and Si3N4—II: Modeling

    NASA Astrophysics Data System (ADS)

    Yang, Peiyan; Cheng, Qiang; Zhang, Zhuomin

    2017-08-01

    In Part I of this study (Cheng et al. in Int J Thermophys 37: 62, 2016), the reflectance and transmittance of dense ceramic plates were measured at wavelengths from 0.4 μm to about 20 μm. The samples of Al2O3 and AlN are semitransparent in the wavelength region from 0.4 μm to about 7 μm, where volume scattering dominates the absorption and scattering behaviors. On the other hand, the Si3N4 plate is opaque in the whole wavelength region. In the mid-infrared region, all samples show phonon vibration bands and surface reflection appears to be strong. The present study focuses on modeling the radiative properties and uses an inverse method to obtain the scattering and absorption coefficients of Al2O3 and AlN in the semitransparent region from the measured directional-hemispherical reflectance and transmittance. The scattering coefficient is also predicted using Mie theory for comparison. The Lorentz oscillator model is applied to fit the reflectance spectra of AlN and Si3N4 from 1.6 μm to 20 μm in order to obtain their optical constants. It is found that the phonon modes for Si3N4 are much stronger in the polycrystalline sample studied here than in amorphous films reported previously.

  18. Laser processing of ceramic and crystalline wafer substrates for microelectronic applications

    NASA Astrophysics Data System (ADS)

    Ashkenasi, David; Binder, Alexander; Jaber, Houssam; Kern, Holger; Mueller, Norbert; Ziegert, Andreas

    2003-07-01

    Ceramic and crystalline wafer substrates are widely used in microelectronics. The individual choice is based on their thermal, optical and mechanical properties. For a variety of applications high quality laser micro processing of these materials, i.e. the generation of blind and through holes, grooves and even complex three dimensional micro structures, is gaining in importance. The department of applied laser technologies of the LMTB GmbH has conducted extensive studies on the versatility of q-switch Nd:YAG laser systems for the micro structuring of ceramic and crystalline wafer substrates that differ strongly in their optical and mechanical properties, such as Al2O3, AlN, sapphire, Si and SiC. This paper discusses the laser material micro machining results in respect to the laser parameters used to optimize the micro processing quality and speed for the different materials.

  19. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm{sup −1} when pumped at 1 MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.

  20. High-frequency, high-sensitivity acoustic sensor implemented on ALN/Si substrate

    NASA Astrophysics Data System (ADS)

    Caliendo, C.; Imperatori, P.

    2003-08-01

    AlN films, 1.6-6.3 μm thick, were sputtered at 200 °C on Si(100) and Si(111) substrates. The films were crack-free, uniform, and c-axis oriented. The experimental phase velocities of surface acoustic waves (SAW) propagating in the AlN/Si structures were estimated and showed only a small discrepancy (20-40 m/s) compared to the calculated theoretical values. A SAW resonator (SAWR)-based chemical sensor, operating at about 700 MHz, was implemented on AlN/Si. The SAWR surface was covered with a polymer film sensitive to relative humidity (RH) changes, already tested for RH sensing in previous works on SAW delay lines implemented on AlN/Si and ZnO/Si and operating at about 130 MHz. The RH mass sensitivity and the detection limit of the SAWR sensor improved by 38% and by one order of magnitude, respectively, compared to the delay line-based sensors previously tested.

  1. Low-Temperature Sintering of AlN Ceramics by Sm2O3-Y2O3-CaO Sintering Additives Formed via Decomposition of Nitrate Solutions

    NASA Astrophysics Data System (ADS)

    Zhan, Jun; Cao, Ye; Zhang, Hao; Guo, Jun; Zhang, Jianhua; Geng, Chunlei; Shi, Changdong; Cui, Song; Tang, Wenming

    2017-01-01

    The Sm, Y and Ca anhydrous nitrates were mixed with the AlN powder in ethanol and then decomposed into the Sm2O3-Y2O3-CaO sintering additives via calcining. Low-temperature sintering of the AlN ceramics was carried out at temperature range from 1675 to 1750 °C. Effects of the composition and adding amount of the sintering additives on the phases, microstructures and properties of the AlN ceramics were investigated. During sintering the AlN ceramics, main secondary phases of CaYAl3O7 and CaSmAl3O7 form. The relative density, bending strength and thermal conductivity of the AlN ceramics increase with the increase in the rare-earth oxides in them. The thermal conductivity of the sintered AlN ceramics is also greatly affected by the distribution of the secondary phases. As sintered at 1750 °C, the AlN ceramics by adding the sintering additives of 2 wt.% Sm2O3, 2 wt.% Y2O3 and 1 wt.% CaO formed via decomposition of their nitrates is fully dense and have the optimal bending strength and thermal conductivity of 402.1 MPa and 153.7 W/(m K), respectively.

  2. High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

    NASA Astrophysics Data System (ADS)

    Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-11-01

    We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.

  3. High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

    PubMed Central

    Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

    2016-01-01

    We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer. PMID:27812006

  4. Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

    SciTech Connect

    Schneider, M.; Bittner, A.; Patocka, F.; Schmid, U.; Stoeger-Pollach, M.

    2012-11-26

    In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

  5. Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

    NASA Astrophysics Data System (ADS)

    Schneider, M.; Bittner, A.; Patocka, F.; Stöger-Pollach, M.; Halwax, E.; Schmid, U.

    2012-11-01

    In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

  6. Radiative Properties of Ceramic Al2O3, AlN, and Si3N4: I. Experiments

    NASA Astrophysics Data System (ADS)

    Cheng, Qiang; Yang, Peiyan; Zhang, Zhuomin

    2016-06-01

    The radiative properties of dense ceramic Al2O3, AlN, and Si3N4 plates are investigated from the visible to the mid-infrared region at room temperature. Each specimen has different surface finishings on different sides of the laminate. A monochromator was used with an integrating sphere to measure the directional-hemispherical reflectance and transmittance of these samples at wavelengths from 0.4 μ m to 1.8 μ m. The specular reflectance was obtained by a subtraction technique. A Fourier-transform infrared spectrometer was used to measure the directional-hemispherical or specular reflectance and transmittance with appropriate accessories from about 1.6 μ m to 19 μ m. All measurements were performed at near-normal incidence on either the smooth side or the rough side of the sample. The experimental observations are qualitatively interpreted considering the optical constants, surface roughness, and volume scattering and absorption.

  7. Improvement in the Crystalline Quality of Semipolar AlN(1102) Films by Using ZnO Substrates with Self-Organized Nanostripes

    NASA Astrophysics Data System (ADS)

    Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2010-04-01

    We have found that self-organized nanostripes structures can be formed on the surface of ZnO(1102) substrates by annealing in the air, and high quality semipolar AlN can be grown on such substrates by growing a room temperature epitaxial AlN buffer layer. The full width at half maximum value of the X-ray rocking curve for AlN 1102 was as low as 500 arcsec. The observed tilt of the AlN(1102) layer grown on ZnO(1102) with self-organized nanostripes is smaller than that on as-received ZnO(1102), indicating that the nanostripes structure suppresses the introduction of misfit dislocations at the heterointerface probably due to the reduced stress field around the nanostripes. This reduction in the density of the misfit dislocations is probably responsible for the improvement in crystalline quality.

  8. Influence of high-temperature processing on the surface properties of bulk AlN substrates

    NASA Astrophysics Data System (ADS)

    Tojo, Shunsuke; Yamamoto, Reo; Tanaka, Ryohei; Thieu, Quang Tu; Togashi, Rie; Nagashima, Toru; Kinoshita, Toru; Dalmau, Rafael; Schlesser, Raoul; Murakami, Hisashi; Collazo, Ramón; Koukitu, Akinori; Monemar, Bo; Sitar, Zlatko; Kumagai, Yoshinao

    2016-07-01

    Deep-level luminescence at 3.3 eV related to the presence of Al vacancies (VAl) was observed in room temperature photoluminescence (RT-PL) spectra of homoepitaxial AlN layers grown at 1450 °C by hydride vapor-phase epitaxy (HVPE) and cooled to RT in a mixture of H2 and N2 with added NH3. However, this luminescence disappeared after removing the near surface layer of AlN by polishing. In addition, the deep-level luminescence was not observed when the post-growth cooling of AlN was conducted without NH3. Secondary ion mass spectrometry (SIMS) studies revealed that although the point defect density of the interior of the AlN layers remained low, the near surface layer cooled in the presence of NH3 was contaminated by Si impurities due to both suppression of the surface decomposition by the added NH3 and volatilization of Si by decomposition of the quartz reactor walls at high temperatures. The deep-level luminescence reappeared after the polished AlN wafers were heated in presence of NH3 at temperatures above 1400 °C. The surface contamination by Si is thought to generate VAl near the surface by lowering their formation energy due to the Fermi level effect, resulting in deep-level luminescence at 3.3 eV caused by the shallow donor (Si) to VAl transition.

  9. Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Yasui, Daiki; Tamaki, Shinya; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-05-01

    Single-crystal a-plane AlN(11\\bar{2}0) films were grown on r-plane sapphire (1\\bar{1}02) substrates by hydride vapor phase epitaxy (HVPE). We performed the optimization of thermal cleaning and nitridation conditions for r-plane sapphire substrates, and investigated the effect of ammonia (NH3) preflow on the crystallinity of a-plane AlN. An r-plane sapphire substrate with uniformly straight atomic steps was formed at 1000 °C, and NH3 preflow was subsequently supplied. The growth mode of a-plane AlN was promoted to be three-dimensional (3D) growth by the nitridation of r-plane sapphire substrates, and sizes of 3D islands were modified by changing the NH3 preflow time. The crystallinity of a-plane AlN films was improved by varying the NH3 preflow time from 30 to 90 s. The optimum crystal quality of a-plane AlN films was obtained with NH3 preflow for 30 s.

  10. Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

    PubMed Central

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Wang, Haiyan; Wen, Lei; Li, Guoqiang

    2015-01-01

    High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained by PLD have been systemically studied. It is found that the amorphous SiAlN interfacial layer is formed during high temperature growth, which is ascribed to the serious interfacial reactions between Si atoms diffused from the substrates and the AlN plasmas produced by the pulsed laser when ablating the AlN target during the high temperature growth. On the contrary, abrupt and sharp AlN/Si hetero-interfaces can be achieved by effectively controlling the interfacial reactions at suitable growth temperature. The mechanisms for the evolution of interfacial layer from the amorphous SiAlN layer to the abrupt and sharp AlN/Si hetero-interfaces by PLD are hence proposed. This work of obtaining the abrupt interfaces and the flat surfaces for AlN films grown by PLD is of paramount importance for the application of high-quality AlN-based devices on Si substrates. PMID:26089026

  11. Ceramic substrate including thin film multilayer surface conductor

    DOEpatents

    Wolf, Joseph Ambrose; Peterson, Kenneth A.

    2017-05-09

    A ceramic substrate comprises a plurality of ceramic sheets, a plurality of inner conductive layers, a plurality of vias, and an upper conductive layer. The ceramic sheets are stacked one on top of another and include a top ceramic sheet. The inner conductive layers include electrically conductive material that forms electrically conductive features on an upper surface of each ceramic sheet excluding the top ceramic sheet. The vias are formed in each of the ceramic sheets with each via being filled with electrically conductive material. The upper conductive layer includes electrically conductive material that forms electrically conductive features on an upper surface of the top ceramic sheet. The upper conductive layer is constructed from a stack of four sublayers. A first sublayer is formed from titanium. A second sublayer is formed from copper. A third sublayer is formed from platinum. A fourth sublayer is formed from gold.

  12. Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

    NASA Astrophysics Data System (ADS)

    Bernard, F.; Casset, F.; Danel, J. S.; Chappaz, C.; Basrour, S.

    2016-08-01

    This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm2. Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system.

  13. Influence of Mo addition on dielectric properties of AlN ceramic matrix composites

    NASA Astrophysics Data System (ADS)

    Zhang, Yan; Yang, Zhimin; Ma, Huina; Du, Jun

    2009-03-01

    AlN-Mo composite ceramics were prepared by spark plasma sintering (SPS) with CaF2 as sintering aids. Effect of Mo addition on the thermal conductivity and dielectric properties of the composite ceramics had been studied. The results show that the room temperature thermal conductivity increases with increasing the content of Mo, and the value begins to decrease slightly when the Mo concentration exceeds 20 vol. %. Analyses indicate that the key factors to dielectric properties are the metal phase concentration and the microstructure of Mo particles. 1 vol. % Ni has been added into the composite ceramics to change the distribution of the Mo phase. The elongated shape particles which link with each other have a tendency to acquire rounded forms which are thermodynamically more stable. Consequently, the dielectric constant and loss of the composite ceramics could be adjusted and the material becomes an electrical conductor in the case of Mo volume fraction of more than 23%. Furthermore, the dielectric properties could be improved to a large extent by transforming the microstructure of the metal particles when the concentration of Mo is fixed.

  14. Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature

    SciTech Connect

    Im, Inho; Jung, Mina; Koo, Jieun; Lee, Hyunjae; Park, Jinsub; Minegishi, Tsutomu; Park, Seunghwan; Fujii, Katsushi; Yao, Takafumi; Kil, Gyungsuk; Hanada, Takashi; Chang, Jiho

    2010-01-15

    The authors investigated the evolution of surface morphology of AlN films grown on ZnO substrates at low temperature (LT) (400 deg. C) as a function of anion/cation supplying ratio (V/III ratio). Unlike the well-known favorable growth conditions for high-temperature growth, smooth-surface LT-AlN layers were obtained under the O-polar surface, stoichiometric, and N-rich conditions. LT-AlN layers revealed smooth surface (roughness in root mean square=0.20 nm for AlN on O-polar ZnO and 0.44 nm for AlN on Zn-polar ZnO) and quite low etch-pit density ({approx}2x10{sup 6} cm{sup -2} for AlN/Zn-polar ZnO).

  15. Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Xiao-Hang; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando A.

    2015-03-01

    We studied temperature dependence of crystalline quality of AlN layers at 1050-1250 °C with a fine increment step of around 18 °C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068 °C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086 °C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 °C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 °C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 °C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086 °C which is accessible by most of the III-nitride MOCVD systems.

  16. AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

    NASA Astrophysics Data System (ADS)

    Jeon, Hunsoo; Jeon, Injun; Lee, Gang Seok; Bae, Sung Geun; Ahn, Hyung Soo; Yang, Min; Yi, Sam Nyung; Yu, Young Moon; Honda, Yoshio; Sawaki, Nobuhiko; Kim, Suck-Whan

    2017-01-01

    High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 °C, respectively. The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. When the temperature in the source zone was 800 °C, the crystalline quality of the AlN and AlGaN epilayers increased as the ratio of Ga to Al increased, and the optimum mix ratio of Ga to Al for the growth of AlN epilayers was approximately 0.35-0.42, obtained from a numerical fitting analysis of the X-ray diffraction (XRD) data for these epilayers. It appears that they can be grown directly by our melted-mixed-source HVPE method in a high-temperature source zone.

  17. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

    PubMed Central

    2014-01-01

    The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 × 107 cm−2 to 2.6 × 107 cm−2. Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer. PMID:25258616

  18. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Lee, Chia-Yu; Tzou, An-Jye; Lin, Bing-Cheng; Lan, Yu-Pin; Chiu, Ching-Hsueh; Chi, Gou-Chung; Chen, Chi-Hsiang; Kuo, Hao-Chung; Lin, Ray-Ming; Chang, Chun-Yen

    2014-09-01

    The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 × 107 cm-2 to 2.6 × 107 cm-2. Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer.

  19. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

    SciTech Connect

    Mizerov, A. M. Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu.

    2015-02-15

    The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.

  20. Synthesis of MgO-CaO-Al2O3-SiO2 nanocomposite powder by polymeric complex method as a novel sintering additive of AlN ceramics

    NASA Astrophysics Data System (ADS)

    Lee, Hwa-Jun; Cho, Woo-Seok; Kim, Hyeong Jun; Pan, Wei; Shahid, Mohammad; Ryu, Sung-Soo

    2016-09-01

    A MgO-CaO-Al2O3-SiO2 (MCAS) nanocomposite powder with a particle size of 50 nm and a specific surface area of 40.6 m2/g was successfully synthesized via heat-treatment of polymeric precursors containing Mg, Ca, Al and Si in air at 700 °C for 5 h. It was characterized as a novel sintering additive for the densification AlN ceramics at a low temperature below 1600 °C. It was found that the nanosized MCAS powder was suitable for the densification of AlN ceramics. In particular, full densification could be achieved when only 1.0 wt% MCAS additive-doped AlN powder compact was sintered for 1 h at 1600 °C, and a thermal conductivity of 84 W/m·K was attained.

  1. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  2. Ceramic barrier layers for flexible thin film solar cells on metallic substrates: a laboratory scale study for process optimization and barrier layer properties.

    PubMed

    Delgado-Sanchez, Jose-Maria; Guilera, Nuria; Francesch, Laia; Alba, Maria D; Lopez, Laura; Sanchez, Emilio

    2014-11-12

    Flexible thin film solar cells are an alternative to both utility-scale and building integrated photovoltaic installations. The fabrication of these devices over electrically conducting low-cost foils requires the deposition of dielectric barrier layers to flatten the substrate surface, provide electrical isolation between the substrate and the device, and avoid the diffusion of metal impurities during the relatively high temperatures required to deposit the rest of the solar cell device layers. The typical roughness of low-cost stainless-steel foils is in the hundred-nanometer range, which is comparable or larger than the thin film layers comprising the device and this may result in electrical shunts that decrease solar cell performance. This manuscript assesses the properties of different single-layer and bilayer structures containing ceramics inks formulations based on Al2O3, AlN, or Si3N4 nanoparticles and deposited over stainless-steel foils using a rotogravure printing process. The best control of the substrate roughness was achieved for bilayers of Al2O3 or AlN with mixed particle size, which reduced the roughness and prevented the diffusion of metals impurities but AlN bilayers exhibited as well the best electrical insulation properties.

  3. Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates

    SciTech Connect

    Chandrasekaran, R.; Moustakas, T. D.; Ozcan, A. S.; Ludwig, K. F.; Zhou, L.; Smith, David J.

    2010-08-15

    This paper reports the growth by molecular beam epitaxy of AlN and GaN thin films on R-plane sapphire substrates. Contrary to previous findings that GaN grows with its (1120) A-plane parallel to the (1102) R-plane of sapphire, our results indicate that the crystallographic orientation of the III-nitride films is strongly dependent on the kinetic conditions of growth for the GaN or AlN buffer layers. Thus, group III-rich conditions for growth of either GaN or AlN buffers result in nitride films having (1120) planes parallel to the sapphire surface, and basal-plane stacking faults parallel to the growth direction. The growth of these buffers under N-rich conditions instead leads to nitride films with (1126) planes parallel to the sapphire surface, with inclined c-plane stacking faults that often terminate threading dislocations. Moreover, electron microscope observations indicate that slight miscut ({approx}0.5 deg. ) of the R-plane sapphire substrate almost completely suppresses the formation of twinning defects in the (1126) GaN films.

  4. Mo-Si-B-Based Coatings for Ceramic Base Substrates

    NASA Technical Reports Server (NTRS)

    Perepezko, John Harry (Inventor); Sakidja, Ridwan (Inventor); Ritt, Patrick (Inventor)

    2015-01-01

    Alumina-containing coatings based on molybdenum (Mo), silicon (Si), and boron (B) ("MoSiB coatings") that form protective, oxidation-resistant scales on ceramic substrate at high temperatures are provided. The protective scales comprise an aluminoborosilicate glass, and may additionally contain molybdenum. Two-stage deposition methods for forming the coatings are also provided.

  5. RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer

    NASA Astrophysics Data System (ADS)

    Kakuda, M.; Morikawa, S.; Kuboya, S.; Katayama, R.; Yaguchi, H.; Onabe, K.

    2013-09-01

    We fabricated cubic AlN (c-AlN) films on MgO (001) substrates via 2-step c-GaN buffer layer by radio-frequency-plasma-assisted molecular beam epitaxy (RF-MBE). The effect of low temperature c-GaN buffer layer on the surface flatness and crystal quality of c-AlN was investigated by AFM and XRD reciprocal space mapping analysis. We examined optical properties of the c-AlN film by spectroscopic ellipsometry. The absorption edge by the direct transition of the c-AlN film was 5.95 eV caused by the hexagonal phase incorporation.

  6. Sol-gel derived ceramic electrolyte films on porous substrates

    SciTech Connect

    Kueper, T.W.

    1992-05-01

    A process for the deposition of sol-gel derived thin films on porous substrates has been developed; such films should be useful for solid oxide fuel cells and related applications. Yttria-stabilized zirconia films have been formed from metal alkoxide starting solutions. Dense films have been deposited on metal substrates and ceramic substrates, both dense and porous, through dip-coating and spin-coating techniques, followed by a heat treatment in air. X-ray diffraction has been used to determine the crystalline phases formed and the extent of reactions with various substrates which may be encountered in gas/gas devices. Surface coatings have been successfully applied to porous substrates through the control of substrate pore size and deposition parameters. Wetting of the substrate pores by the coating solution is discussed, and conditions are defined for which films can be deposited over the pores without filling the interiors of the pores. Shrinkage cracking was encountered in films thicker than a critical value, which depended on the sol-gel process parameters and on the substrate characteristics. Local discontinuities were also observed in films which were thinner than a critical value which depended on the substrate pore size. A theoretical discussion of cracking mechanisms is presented for both types of cracking, and the conditions necessary for successful thin formation are defined. The applicability of these film gas/gas devices is discussed.

  7. Ceramic substrate's detection system based on machine vision

    NASA Astrophysics Data System (ADS)

    Yang, Li-na; Zhou, Zhen-feng; Zhu, Li-jun

    2009-05-01

    Machine vision detection technology is an integrated modern inspection technology including optoelectronics, computer image, information processing and computer vision etc. It regards image as means and carrier of transmitting information, and extracts useful information from image and acquires all kinds of necessary parameters by dealing with images. Combining key project in Zhejiang Province Office of Education-research of high accuracy and large size machine vision automatic detection and separation technology. The paper describes the primary factors of influencing system's precision, develops an automatic detection system of ceramic substrate. The system gathers the image of ceramic substrate by CMOS( Complementary Metal-Oxide Semiconductor). The quality of image is improved by optical imaging and lighting system. The precision of edge detection is improved by image preprocessing and sub-pixel. In image enhancement part , image filter and geometric distortion correction are used. Edges are obtained through a sub-pixel edge detection method: determining the probable position of image edge by advanced Sobel operator and then taking three-order spline interpolation function to interpolate the gray edge image. The mathematical modeling of dimensional and geometric error of visual inspection system is developed. The parameters of ceramic substrate's length, and width are acquired. The experiment results show that the presented method in this paper increases the precision of vision detection system , and measuring results of this system are satisfying.

  8. Controlled sputtering of AlN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate

    NASA Astrophysics Data System (ADS)

    Iqbal, A.; Walker, G.; Iacopi, A.; Mohd-Yasin, F.

    2016-04-01

    Aluminum Nitride (AlN) thin films are successfully deposited on epitaxial 3C-SiC-on-Si (100) substrates using DC magnetron sputterer. The sputtered films are characterized on the following parameters: crystal orientations (Siemens D500 X-Ray diffraction tool), deposition rate (Nanospec AFT 180), surface roughness (Park NX20 Atomic Force Microscopy), refractive index (Rudolph AutoEL IV Ellipsometer), in-plane stress (Tencor Flexus 2320 System) and Raman Spectra (Rennishaw InVia Spectrometer). XRD results demonstrate that the orientation of the AlN thin films can be changed from (002) to (101) by increasing the Nitrogen to Argon ratio from 40% to 80% at the total gas flow of 50 sccm. We are also able to tune the in-plane stress via RF biasing on the substrate. Both controlling abilities enable the applications of these thin films for low cost longitudinal piezoelectric devices and a quasi-shear mode devices using (002) and (101) orientations, respectively.

  9. Laser Welding of Alumina Ceramic Substrates with Two Fixed Beams

    NASA Astrophysics Data System (ADS)

    Sedore, Blake William Clark

    Laser welding was investigated as a potential joining technology for alumina ceramic substrates. The objective of this study was to develop a method to preheat the ceramic using a single defocused laser beam prior to welding. Engineering ceramics are employed in a variety of systems and environments due to their unique properties. Joining technologies must be developed to facilitate the manufacture of complex or large ceramic components. Laser welding is advantageous as it forms joints rapidly, and does not introduce intermediate materials to form the bond, which can have deleterious effects. The Laser Machining System (LMS) at Queen's University was adapted for this study. A defocused far-infrared (FIR) laser beam was positioned to overlay a focused near-infrared (NIR) laser beam; the defocused FIR beam preheated the ceramic substrate and the focused NIR beam formed the weld. A finite element model was developed in COMSOL MultiPhysics to simulate the preheating processes and to develop a preheating protocol. The protocol was implemented using the FIR beam and adjusted to achieve preheating temperatures of 1450, 1525, and 1600°C. Welds were performed on 1 mm thick alumina plates using the preheating protocols and NIR beam powers of 25, 50, and 75 W. Weld speed was held constant throughout the study at 0.5 mm/s. The preheating protocols were successful at achieving near-constant preheating temperatures, with standard deviations below 32 degrees. Partially penetrating welds were formed with the NIR beam at 25 W, and fully penetrating welds at 50 and 75 W. Large pores were present in the 25 W and 50 W welds. Minimal porosity was observed in the welds formed at 75 W. All of the welded plates experienced a transverse fracture that extended perpendicular to weld, and a longitudinal fracture extending parallel to the weld. This study shows that a fixed defocused laser beam can successfully preheat alumina substrates to the high temperatures required for welding; however

  10. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xenogiannopoulou, E.; Tsipas, P.; Aretouli, K. E.; Tsoutsou, D.; Giamini, S. A.; Bazioti, C.; Dimitrakopulos, G. P.; Komninou, Ph.; Brems, S.; Huyghebaert, C.; Radu, I. P.; Dimoulas, A.

    2015-04-01

    Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe2/Bi2Se3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3.Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The

  11. Computational modeling of thin ceramic tiles backed by thin substrates

    SciTech Connect

    Walker, J.D.; Anderson, C.E. Jr.; Cox, P.A.

    1995-12-31

    Building on the work of Wilkins, Eulerian hydrocode calculations were performed with ceramic models to examine the behavior of thin ceramic tiles backed by a thin substrate. In order to match ballistic limit data it was necessary to include a pressure dependent flow stress for failed ceramic. Reasonable agreement is found between the modified model and ballistic limit data for a simulated armor piercing round impacting an AD-85 alumina/6061T6 aluminum laminate. Based upon this success, the modified model was used to examine the performance of a SiC/6061T6 aluminum laminate when impacted by an M80 ball round (7.62 mm) at muzzle velocity. The projectile undergoes large deformation, as does the aluminum backing sheet. The computational results indicate, for the M80 projectile impacting at muzzle velocity, that the ballistic limit thickness for the SiC/aluminum laminate should weigh 10% less than the ballistic limit thickness for steel. The talk will include a video tape of calculations.

  12. Hot Films on Ceramic Substrates for Measuring Skin Friction

    NASA Technical Reports Server (NTRS)

    Noffz, Greg; Leiser, Daniel; Bartlett, Jim; Lavine, Adrienne

    2003-01-01

    Hot-film sensors, consisting of a metallic film on an electrically nonconductive substrate, have been used to measure skin friction as far back as 1931. A hot film is maintained at an elevated temperature relative to the local flow by passing an electrical current through it. The power required to maintain the specified temperature depends on the rate at which heat is transferred to the flow. The heat transfer rate correlates to the velocity gradient at the surface, and hence, with skin friction. The hot-film skin friction measurement method is most thoroughly developed for steady-state conditions, but additional issues arise under transient conditions. Fabricating hot-film substrates using low-thermal-conductivity ceramics can offer advantages over traditional quartz or polyester-film substrates. First, a low conductivity substrate increases the fraction of heat convected away by the fluid, thus increasing sensitivity to changes in flow conditions. Furthermore, the two-part, composite nature of the substrate allows the installation of thermocouple junctions just below the hot film, which can provide an estimate of the conduction heat loss.

  13. Microstrip Gas Chambers on glass and ceramic substrates

    SciTech Connect

    Gong, W.G.; Wieman, H.; Harris, J.W.; Mitchell, J.T.; Hong, W.S.; Perez-Mendez, V.

    1993-11-01

    We report developments of Microstrip Gas Chambers (MSGC) fabricated on glass and ceramic substrates with various resistivities. Low resistivity of the substrate is found to be critical for achieving stable operation of microstrip gas chambers. The microstrip pattern consists of 10 {mu}m wide anodes and 90 {mu}m wide cathodes with a 200 {mu}m anode-to-anode pitch. High-quality microstrips are fabricated using the dry etch after UV-photolithography. Our chambers are tested in an Ar(90)-CH{sub 4}(10) gas mixture at atmospheric pressure with a 100 {mu}Ci {sup 55}Fe source. An energy resolution (FWHM) of 15% has been achieved for 6 keV soft X-rays. At a rate of 5 {times} 10{sup 4} photons/sec/mm{sup 2}, gas gains are stable within a few percents. Long-term tests of gain stability and rate capability are yet to be pursued.

  14. Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates

    NASA Astrophysics Data System (ADS)

    Padavala, Balabalaji

    The semiconductor boron phosphide (BP) has many outstanding features making it attractive for developing various electronic devices, including neutron detectors. In order to improve the efficiency of these devices, BP must have high crystal quality along with the best possible electrical properties. This research is focused on growing high quality crystalline BP films on a variety of superior substrates like AlN, 4H-SiC, 3C-SiC and ZrB2 by chemical vapor deposition. In particular, the influence of various parameters such as temperature, reactant flow rates, and substrate type and its crystalline orientation on the properties of BP films were studied in detail. Twin-free BP films were produced by depositing on off-axis 4H-SiC(0001) substrate tilted 4° toward [11¯00] and crystal symmetry matched zincblende 3C-SiC. BP crystalline quality improved at higher deposition temperature (1200°C) when deposited on AlN, 4H-SiC, whereas increased strain in 3C-SiC and increased boron segregation in ZrB2 at higher temperatures limited the best deposition temperature to below 1200°C. In addition, higher flow ratios of PH 3 to B2H6 resulted in smoother films and improved quality of BP on all substrates. The FWHM of the Raman peak (6.1 cm -1), XRD BP(111) peak FWHM (0.18°) and peak ratios of BP(111)/(200) = 5157 and BP(111)/(220) = 7226 measured on AlN/sapphire were the best values reported in the literature for BP epitaxial films. The undoped films on AlN/sapphire were n-type with a highest electron mobility of 37.8 cm2/V˙s and a lowest carrier concentration of 3.15x1018 cm -3. Raman imaging had lower values of FWHM (4.8 cm-1 ) and a standard deviation (0.56 cm-1) for BP films on AlN/sapphire compared to 4H-SiC, 3C-SiC substrates. X-ray diffraction and Raman spectroscopy revealed residual tensile strain in BP on 4H-SiC, 3C-SiC, ZrB2/4H-SiC, bulk AlN substrates while compressive strain was evident on AlN/sapphire and bulk ZrB2 substrates. Among the substrates studied, Al

  15. Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates

    NASA Astrophysics Data System (ADS)

    Lachab, Mohamed; Sun, WenHong; Jain, Rakesh; Dobrinsky, Alex; Gaevski, Mikhail; Rumyantsev, Sergey; Shur, Michael; Shatalov, Max

    2017-01-01

    We demonstrate the capability to control the optical polarization of room-temperature stimulated emissions (SEs) at 238-239 nm from optically pumped AlGaN multiple-quantum-well (MQW) heterostructures on bulk AlN. The results of structural and optical characterizations provided evidence that altering the strain state in the pseudomorphically grown MQW laser structures enabled the switching of the polarization direction of the SE from predominantly transverse electric (TE) at 238 nm to predominantly transverse magnetic (TM) at 239 nm. The SE observed at 238 nm represents the shortest peak wavelength with TE polarization yet reported for AlGaN materials grown on any type of substrate.

  16. Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Yamashita, Yasuhiro; Miyake, Hideto; Hiramatsu, Kazumasa

    2017-06-01

    High-crystallinity a-plane AlN(11 2 ̅0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were grown on r-plane sapphire(1 1 ̅02) substrates. We investigated the effect of the growth temperature and thermal annealing conditions for the LT-AlN buffer layers on the crystallinity and surface morphology. The surface roughness of the buffer layers became smooth with the decrease in growth temperature to 900 °C, and the crystallinity of the buffer layers was improved by thermal annealing at temperatures over 1600 °C. HT-AlN films were then grown on the annealed LT-AlN buffer layers at 1500 °C. The optimum crystallinity of HT-AlN films without any facet formation at the surfaces was obtained with full width at half maximum values of the X-ray rocking curves for AlN(11 2 ̅0)//[1 1 ̅00]AlN at 770 and (0002) at 640″.

  17. In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy

    SciTech Connect

    Chaumeton, Florian Gauthier, Sébastien Martrou, David

    2015-06-15

    Nitride wide-band-gap semiconductors are used to make high power electronic devices or efficient light sources. The performance of GaN-based devices is directly linked to the initial AlN buffer layer. During the last twenty years of research on nitride growth, only few information on the AlN surface quality have been obtained, mainly by ex-situ characterization techniques. Thanks to a Non Contact Atomic Force Microscope (NC-AFM) connected under ultra high vacuum (UHV) to a dedicated molecular beam epitaxy (MBE) chamber, the surface of AlN(0001) thin films grown on Si(111) and 4H-SiC(0001) substrates has been characterized. These experiments give access to a quantitative determination of the density of screw and edge dislocations at the surface. The layers were also characterized by ex-situ SEM to observe the largest defects such as relaxation dislocations and hillocks. The influence of the growth parameters (substrate temperature, growth speed, III/V ratio) and of the initial substrate preparation on the dislocation density was also investigated. On Si(111), the large in-plane lattice mismatch with AlN(0001) (19%) induces a high dislocation density ranging from 6 to 12×10{sup 10}/cm{sup 2} depending on the growth conditions. On 4H-SiC(0001) (1% mismatch with AlN(0001)), the dislocation density decreases to less than 10{sup 10}/cm{sup 2}, but hillocks appear, depending on the initial SiC(0001) reconstruction. The use of a very low growth rate of 10 nm/h at the beginning of the growth process allows to decrease the dislocation density below 2 × 10{sup 9}/cm{sup 2}.

  18. High Quality Transferable AlN Thin Film by PLD

    NASA Astrophysics Data System (ADS)

    Li, Heng; Lu, Xiaoli; Li, Xin; Zhang, JinCheng; Hao, Yue

    2017-06-01

    AlN thin film was epitaxial grown on c-plane sapphire substrate by pulsed laser deposition. To reduce structural defects from largely lattice mismatched substrate, MgO or ZnO buffer layer was inserted between AlN and sapphire. Crystal structure and surface morphology of as prepared AlN were characterized by XRD, AFM, and SEM. It was found that buffer layers significantly improve crystalline quality of AlN, especially using ZnO. Furthermore, a general and steady wet chemical process was developed to selectively etch away ZnO layer, so that high quality free-standing AlN thin film was obtained. This film could be transferred onto any other host substrates such as Si, quartz, etc. Moreover, with no clamping effect from the substrate, the as-prepared free-standing AlN thin films may find potential applications in high sensitivity piezoelectric devices, flexible wearable detectors and so on.

  19. Novel low-temperature sintering ceramic substrate based on indialite/cordierite glass ceramics

    NASA Astrophysics Data System (ADS)

    Varghese, Jobin; Vahera, Timo; Ohsato, Hitoshi; Iwata, Makoto; Jantunen, Heli

    2017-10-01

    In this paper, a novel low-temperature sintering substrate for low temperature co-fired ceramic applications based on indialite/cordierite glass ceramics with Bi2O3 as a sintering aid showing low permittivity (εr) and ultralow dielectric loss (tan δ) is described. The fine powder of indialite was prepared by the crystallization of cordierite glass at 1000 °C/1 h. The optimized sintering temperature was 900 °C with 10 wt % Bi2O3 addition. The relative density achieved was 97%, and εr and tan δ were 6.10 and 0.0001 at 1 MHz, respectively. The composition also showed a moderately low temperature coefficient of relative permittivity of 118 ppm/°C at 1 MHz. The obtained linear coefficient of thermal expansion was 3.5 ppm/°C in the measured temperature range of 100 to 600 °C. The decreasing trend in dielectric loss, the low relative permittivity at 1 MHz, and the low thermal expansion of the newly developed composition make it an ideal choice for radio frequency applications.

  20. Adhesion of Ceramic Coating on Thin and Smooth Metal Substrate: A Novel Approach with a Nanostructured Ceramic Interlayer

    NASA Astrophysics Data System (ADS)

    Vert, R.; Carles, P.; Laborde, E.; Mariaux, G.; Meillot, E.; Vardelle, A.

    2012-12-01

    The adhesion of plasma-sprayed coating is, to a large extent, controlled by the cleanness and roughness of the surface on which the coating is deposited. So, most of the plasma spray procedures involve surface pretreatment by grit-blasting to adapt the roughness of the surface to the size of the impacting particles. This preparation process brings about compressive stresses that make it inappropriate for thin substrates. The present works aim to elaborate a thick ceramic coating (about 0.5 mm thick) on a thin metal substrate (1 mm thick) with a smooth surface (Ra of about 0.4 μm). The coating system is intended for use in a Generation-IV nuclear energy system. It must exhibit a good adhesion between the ceramic topcoat and the smooth metal substrate to meet the specifications of the application. Our approach consisted of depositing the ceramic topcoat by air plasma spraying on a few micrometers thick ceramic layer made by suspension plasma spraying. This nanostructured layer played the role of a bond coat for the topcoat and made it possible to deposit it on the as-received substrate. The adhesion of the nanostructured layer was measured by the Vickers indentation cracking technique and that of the ceramic duplex coating system by tensile test.

  1. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel

    NASA Astrophysics Data System (ADS)

    Imura, Masataka; Banal, Ryan G.; Liao, Meiyong; Liu, Jiangwei; Aizawa, Takashi; Tanaka, Akihiro; Iwai, Hideo; Mano, Takaaki; Koide, Yasuo

    2017-01-01

    Single-crystal AlN/diamond heterojunction with high-density interface hole channel is successfully obtained by metal-organic vapor phase epitaxy. The AlN layer is epitaxially grown on hydrogen-terminated (H-)diamond(111) substrate. The thermal treatment of diamond substrate just before AlN growth under hydrogen and ammonia mixture environment at 1250 °C leads to surface sheet hole density as high as ˜1.0 × 1014 cm-2 without structural reconstruction of diamond surface. In addition, the use of smaller off-cut angle (0.20 ± 0.25°) H-diamond(111) substrate combined with this treatment enables to obtain single-crystal epitaxial AlN layer, which simultaneously acts as passivation of the surface hole channel with such a high density. The AlN/H-diamond(111) heterojunction reveals type-II staggered energy band configuration with valence band offset of ˜2.0 eV, which is suitable for the fabrication of p-channel field-effect transistor using AlN-gate-insulator/diamond heterojunction. These results are promising for the development of AlN/diamond hybrid power electronic devices.

  2. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using k•p theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245 nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  3. Plasma-Spraying Ceramics Onto Smooth Metallic Substrates

    NASA Technical Reports Server (NTRS)

    Miller, Robert A.; Brindley, William J.; Rouge, Carl J.; Leissler, George

    1992-01-01

    In fabrication process, plasma-sprayed ceramic coats bonded strongly to smooth metallic surfaces. Principal use of such coats in protecting metal parts in hot-gas paths of advanced gas turbine engines. Process consists of application of initial thin layer of ceramic on smooth surface by low-pressure-plasma spraying followed by application of layer of conventional, low-thermal-conductivity atmospheric-pressure plasma-sprayed ceramic.

  4. AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth

    NASA Astrophysics Data System (ADS)

    García Molleja, Javier; José Gómez, Bernardo; Ferrón, Julio; Gautron, Eric; Bürgi, Juan; Abdallah, Bassam; Abdou Djouadi, Mohamed; Feugeas, Jorge; Jouan, Pierre-Yves

    2013-11-01

    Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.

  5. MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

    NASA Astrophysics Data System (ADS)

    Marini, Jonathan; Leathersich, Jeffrey; Mahaboob, Isra; Bulmer, John; Newman, Neil; (Shadi) Shahedipour-Sandvik, F.

    2016-05-01

    We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor deposition (MOCVD). Large reduction in hillock density was achieved by implementation of an optimized high temperature AlN nucleation layer and use of indium surfactant in GaN overgrowth. A reduction by more than a factor of five in hillock density from 1000 to 170 hillocks/cm-2 was achieved as a result. Crystal quality and surface morphology of the resultant GaN films were characterized by high resolution x-ray diffraction and atomic force microscopy and found to be relatively unaffected by the buffer conditions. It is also shown that the density of smaller surface features is unaffected by AlN buffer conditions.

  6. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.

    PubMed

    Xenogiannopoulou, E; Tsipas, P; Aretouli, K E; Tsoutsou, D; Giamini, S A; Bazioti, C; Dimitrakopulos, G P; Komninou, Ph; Brems, S; Huyghebaert, C; Radu, I P; Dimoulas, A

    2015-05-07

    Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe2/Bi2Se3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3.

  7. () preferential orientation of polycrystalline AlN grown on SiO2/Si wafers by reactive sputter magnetron technique

    NASA Astrophysics Data System (ADS)

    Bürgi, Juan; García Molleja, Javier; Bolmaro, Raúl; Piccoli, Mattia; Bemporad, Edoardo; Craievich, Aldo; Feugeas, Jorge

    2016-04-01

    Aluminum nitride (AlN) is a ceramic compound that could be used as a processing material for semiconductor industry. However, the AlN crystalline structure plays a crucial role in its performance. In this paper, polycrystalline AlN films have been grown onto Si(1 1 1) and Si(1 0 0) (with an oxide native coverage of SiO2) wafers by RSM (reactive sputter magnetron) technique using a small (5 L) reactor. The development of polycrystalline AlN films with a good texture along () planes, i.e., semi-polar structure, was shown. Analyses were done using X-ray diffraction in the Bragg-Brentano mode and in the GIXRD (grazing incidence X-ray diffraction) one, and the texture was determined through pole figures. The structure and composition of these films were also studied by TEM and EDS techniques. Nevertheless, the mapping of the magnetic field between the magnetron and the substrate has shown a lack of symmetry at the region near the substrate. This lack of symmetry can be attributable to the small dimensions of the chamber, and the present paper suggests that this phenomenon is the responsible for the unusual () texture developed.

  8. Crystal growth induced by Nd:YAG laser irradiation in patterning glass ceramic substrates with dots

    NASA Astrophysics Data System (ADS)

    Sola, D.; Escartín, A.; Cases, R.; Peña, J. I.

    2011-03-01

    In this work a glass ceramic substrate was processed by focusing a laser beam inside the said material. The crystal phase within the amorphous matrix provides mechanical properties to the glass ceramic substrate in such a way that dots can be patterned inside the fore-mentioned material without producing any cracks. These marks are made up of crystals, the growth of which has been induced by the laser beam. These inner structures can modify the optical, thermal and mechanical properties of the glass ceramic substrate. A Q-switched Nd:YAG laser at its fundamental wavelength of 1064 nm with pulsewidths in the nanosecond range has been used. Morphology, composition, microstructure, mechanical and thermal properties of the processed material are described.

  9. Experimental Evaluation of Hot Films on Ceramic Substrates for Skin-Friction Measurement

    NASA Technical Reports Server (NTRS)

    Noffz, Gregory K.; Lavine, Adrienne S.; Hamory, Philip J.

    2003-01-01

    An investigation has been performed on the use of low-thermal conductivity, ceramic substrates for hot films intended to measure skin friction. Hot films were deposited on two types of ceramic substrates. Four hot films used composite-ceramic substrates with subsurface thermocouples (TCs), and two hot films were deposited on thin Macor(R) substrates. All six sensors were tested side by side in the wall of the NASA Glenn Research Center 8-ft by 6-ft Supersonic Wind Tunnel (SWT). Data were obtained from zero flow to Mach 1.98 in air. Control measurements were made with three Preston tubes and two boundary-layer rakes. The tests were repeated at two different hot film power levels. All hot films and subsurface TCs functioned throughout the three days of testing. At zero flow, the films on the high-thermal conductivity Macor(R) substrates required approximately twice the power as those on the composite-ceramic substrates. Skin-friction results were consistent with the control measurements. Estimates of the conduction heat losses were made using the embedded TCs but were hampered by variability in coating thicknesses and TC locations.

  10. The chemical vapor deposition of zirconium carbide onto ceramic substrates

    SciTech Connect

    Glass, John A, Jr.; Palmisiano, Nick, Jr.; Welsh, R. Edward

    1999-07-01

    Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system.

  11. Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

    SciTech Connect

    Cicek, E.; McClintock, R.; Cho, C. Y.; Rahnema, B.; Razeghi, M.

    2013-10-28

    We report on Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm{sup 2} area PD showed unbiased peak external quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10{sup −8} A/cm{sup 2} at 10 V reverse bias.

  12. Absorption of organic compounds and organometallics on ceramic substrates for wear reduction

    SciTech Connect

    Kennedy, P.J.; Agarwala, V.S.

    1996-12-31

    The concept of employing thermally stable compounds (that is, metal oxides) as high temperature vapor phase ceramic lubricants was investigated. A major part of this study was devoted to the development of various calorimetric and tribological techniques that could be used to determine interfacial reactions between thermally stable compounds and ceramic substrates such as zirconia and alumina. This interaction is pivotal in understanding the mechanism of high temperature lubricity. The approach consisted of selecting low sublimation temperature materials and measuring their thermodynamic interactions as vapors with the ceramic substrates. The materials studied included two easily sublimable organic compounds (that is, naphthalene and salicylic acid) and several organometallics (for example, copper phthalocyanine). Thermodynamic data such as heat of adsorption, packing density, and reversibility of the adsorption were obtained on some of these compounds and were related to wear characteristics. All of these compounds provided effective lubrication at room temperature. Copper phthalocyanine was an effective lubricant at temperatures up to 400 C.

  13. Natural Ceramic Nanotube Substrates for Surface-Enhanced Raman Spectroscopy

    NASA Astrophysics Data System (ADS)

    Vinokurov, Vladimir A.; Kopitsyn, Dmitry S.; Kotelev, Mikhail S.; Ivanov, Evgenii V.; Lvov, Yuri M.; Novikov, Andrei A.

    2015-12-01

    Natural halloysite clay nanotubes are cheap and available in large quantities, thus seem superior to the other nanotube-based materials. Halloysite nanotubes are used to form structured substrates for surface-enhanced Raman scattering (SERS). Specifically, layered aluminum-halloysite- (noble) metal substrates were prepared by deposition of halloysite nanotubes on aluminum foil, followed by thin metal film coatings via vacuum evaporation. The composite substrates required no capping agent on the metal surface and thus avoided background peaks in the Raman spectra, making them well suited for SERS studies. Gold-, silver-, and copper-coated substrates exhibited SERS for p-mercaptobenzoic acid, whereas uncoated and platinum-coated substrates did not. The SERS enhancement factors for the gold-, silver-, and copper-coated substrates were, by a conservative estimate, 1.4 × 105, 3.5 × 104, and 3.5 × 103, respectively. Interestingly enough, the SERS enhancement factors of substrates decrease in a row: Au > Ag > Cu, which differ from those for the corresponding metal nanoparticles.

  14. Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

    NASA Astrophysics Data System (ADS)

    Lu, Y.; Cong, G. W.; Liu, X. L.; Lu, D. C.; Wang, Z. G.; Wu, M. F.

    2004-12-01

    The depth distribution of the strain-related tetragonal distortion eT in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of eT of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN ⟨0001⟩ axis shows a tilt difference about 0.01° between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of eT nor the decoupling phenomenon is found. The 0.01° decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of eT should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness.

  15. Acoustical inspection method for inspecting the ceramic coating of catalytic converter monolith substrates

    SciTech Connect

    Varterasian, J.H.; Blaser, D.A.

    1987-03-31

    An acoustic inspection method is described for determining in a catalytic converter monolith substrate whether a ceramic coating was applied in a predetermined amount to the surface of exhaust gas passages extending therethrough and whether the ceramic coating is blocking any of the passages. The method comprises: (a) mounting a catalytic converter monolith substrate with ceramic coated exhaust gas passages extending therethrough in an acoustically sealed structure so as to form a throat communicating a speaker at an entrance end of the coated passages with an empty resonator cavity at an exit end of the coated passages and thereby form a Helmholtz resonator, (b) driving the speaker to produce a continuous sound wave through the coated passages into the resonator cavity at a predetermined frequency and thereby produce oscillatory sound waves through the coated passages at the same frequency, (c) comparing the phase angles of the sound waves at the entrance and exit ends of the coated substrate passages and with respect to those of a reference sound wave of the same frequency passed in like manner through a reference substrate known to have the desired quantity of coating on the passages and no blockage, and (d) detecting whether or not the passages of the substrate being inspected have the prescribed quantity and any blockage on the basis that the occurrence of a prescribed difference in the phase angles infers a deviation in the total flow area of the passages and thereby a deviation from the desired coating as to amount and lack of blockage.

  16. Laser surface treatment of porous ceramic substrate for application in solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Mahmod, D. S. A.; Khan, A. A.; Munot, M. A.; Glandut, N.; Labbe, J. C.

    2016-08-01

    Laser has offered a large number of benefits for surface treatment of ceramics due to possibility of localized heating, very high heating/cooling rates and possibility of growth of structural configurations only produced under non-equilibrium high temperature conditions. The present work investigates oxidation of porous ZrB2-SiC sintered ceramic substrates through treatment by a 1072 ± 10 nm ytterbium fiber laser. A multi-layer structure is hence produced showing successively oxygen rich distinct layers. The porous bulk beneath these layers remained unaffected as this laser-formed oxide scale and protected the substrate from oxidation. A glassy SiO2 structure thus obtained on the surface of the substrate becomes subject of interest for further research, specifically for its utilization as solid protonic conductor in Solid Oxide Fuel Cells (SOFCs).

  17. Applied Learning Networks (ALN)

    DTIC Science & Technology

    2007-01-01

    AFRL-IF-RS-TR-2007-7 Final Technical Report January 2007 APPLIED LEARNING NETWORKS (ALN) University of Southern California...any other person or corporation; or convey any rights or permission to manufacture, use, or sell any patented invention that may relate to them...1-0051 4. TITLE AND SUBTITLE APPLIED LEARNING NETWORKS (ALN) 5c. PROGRAM ELEMENT NUMBER 62301E 5d. PROJECT NUMBER T981 5e. TASK NUMBER US

  18. Magnesium diboride films on metallic and ceramic substrates

    NASA Astrophysics Data System (ADS)

    Auinger, M.; Gritzner, G.

    2008-02-01

    A boron suspension in terpineol was applied to iron, titanium as well as to polycrystalline aluminium oxide, titanium dioxide and yttria doped zirconium dioxide substrates by screen printing. The samples were dried at 125 °C. The specimens were placed into a covered aluminium oxide crucible together with metallic magnesium. Conversion to magnesium diboride was carried out in an argon - hydrogen (6.5 vol-%) atmosphere under ambient pressure. Sintering temperature depended on the substrate chosen and varied between 750 °C and 950 °C. Dense and uniform MgB2-layers were obtained, showing transition temperatures of up to 38 K. Characterisation of the films was performed by X-ray diffraction, by scanning electron microscopy as well as by temperature - resistance measurements. Furthermore, technological applications of this technique will be discussed.

  19. Electrophoretic and Electrolytic Deposition of Ceramic Particles on Porous Substrates

    DTIC Science & Technology

    1992-09-30

    mixtures of the tetragonal and monoclirac ZrO: polymorphs having nanosize crys- tallites. Oxidation of the Ti substrate and reaction with zircoria during...layer being R), ZrG, (teiragonai-t and manoclieic-m) and varous zirconium ti. filled by the growing titaniumr oxide (Fig. 6). Microcnem- tonotes (ZT...atmosmnere and their phase composition, and Inorphology studied. Oxidation resistance of coated specirvens was studied at 83U0C in continuous and

  20. MM&T--Ceramic Metal Substrates for Hybrid Electronics

    DTIC Science & Technology

    1983-08-01

    on metal powder sintering . Resistors o Length and width limitations for decades 10 ohms to I megohm. o Termination effects. o Effects of surface...This phenomenon suggests primarily that very little sintering of the metal powders has taken place. Also, the firing temperatures of thick films for PES...substrates are in the range where palladium oxide forms, but below the range where it decomposes. The palladium oxide may inhibit sintering of the

  1. Test data on leadless chip carriers with ceramic substrates in severe random vibration environments

    NASA Astrophysics Data System (ADS)

    Henderson, J.

    Relatively new in electronic packages are the hermetic chip carriers (HCC). LSI technology, coupled with the HCC packaging concept, offers density which is two to five times more dense than conventional dual-in-line or flatpack concepts. The present study is concerned with a research program which has been conducted in connection with the application of leadless hermetic chip carriers to a high reliability system design. Because of the thermal coefficient of expansion differential between the HCC and its substrate, the specific choice would be ceramic or porcelain steel technologies. The HCC can assemble to either a multilayer thick film or cofired ceramic substrate. An on-board computer with a 128K x 22 memory capacity is currently being developed. Two approaches are being considered. The first uses eight 16K trays, while the second employs four 32K trays. In vibration development tests, both the 16 and 32K trays were vibrated in the same fixture.

  2. KOH based selective wet chemical etching of AlN, Al{sub x}Ga{sub 1−x}N, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

    SciTech Connect

    Guo, W. Kirste, R.; Bryan, I.; Bryan, Z.; Hussey, L.; Reddy, P.; Collazo, R.; Sitar, Z.; Tweedie, J.

    2015-02-23

    A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and Al{sub x}Ga{sub 1−x}N (up to 12×) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations.

  3. KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

    SciTech Connect

    Guo, W; Kirste, R; Bryan, I; Bryan, Z; Hussey, L; Reddy, P; Tweedie, J; Collazo, R; Sitar, Z

    2015-02-23

    A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and AlxGa1-xN (up to 12 x) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations. (C) 2015 AIP Publishing LLC.

  4. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  5. Thermal expansion compatibility of ceramic chip capacitors mounted on alumina substrates.

    NASA Technical Reports Server (NTRS)

    Allen, R. V.; Caruso, S. V.; Wilson, L. K.; Kinser, D. L.

    1972-01-01

    The thermal expansion coefficients of a representative sample of BaTiO3 and TiO2 ceramic chip capacitors and alumina substrates have been examined. These data have revealed large potential mechanical stresses under thermal cycling. A mathematical analysis of a composite model of the capacitor to predict the thermal expansion and modulus of elasticity and an analysis of the capacitor-substrate system to predict the magnitude of thermally induced stresses have been conducted. In all cases studied, thermally induced stresses great enough to cause capacitor body rupture or termination failure was predicted.

  6. Method of forming a dense, high temperature electronically conductive composite layer on a porous ceramic substrate

    DOEpatents

    Isenberg, Arnold O.

    1992-01-01

    An electrochemical device, containing a solid oxide electrolyte material and an electrically conductive composite layer, has the composite layer attached by: (A) applying a layer of LaCrO.sub.3, YCrO.sub.3 or LaMnO.sub.3 particles (32), on a portion of a porous ceramic substrate (30), (B) heating to sinter bond the particles to the substrate, (C) depositing a dense filler structure (34) between the doped particles (32), (D) shaving off the top of the particles, and (E) applying an electronically conductive layer over the particles (32) as a contact.

  7. ADAPTIVE OPTICS: Modal liquid-crystal wavefront corrector on a ceramic substrate: the single-contact approximation

    NASA Astrophysics Data System (ADS)

    Klimov, N. A.; Kotova, S. P.; Samagin, S. A.; Kvashnin, M. Yu; Vdovin, G. V.; Loktev, M. Yu

    2007-12-01

    The possibility of manufacturing a multichannel modal liquid-crystal corrector of a new type based on a ceramic substrate with a high permittivity is confirmed theoretically and experimentally. A mathematical model of the single-electrode corrector is proposed and used to study the dependences of the voltage and phase profiles on the properties of the corrector design. The technology of manufacturing a ceramic substrate with built-in electrodes is developed.

  8. Migration of elements in colour layers deposited on a ceramic substrate under the influence of laser treatment

    NASA Astrophysics Data System (ADS)

    Chmielewska, Danuta; Synowiec, Barbara; Olszyna, Andrzej; Marczak, Jan; Sarzyński, Antoni; Strzelec, Marek

    This paper summarizes the experimental results in the laser firing of colour agents on ceramic substrates. White glazed and fired ceramic plates were used as the substrate, while the deposited powders were mixtures containing ceramic colours and other colour agents. Various geometric patterns were deposited by a cw fiber Yb:YAG laser with speed controlled by a set of galvanometric scanners. The results, analyzed by means of optical microscopy, SEM EDS and laser profilometry explained the visually observed changes in pattern colours caused by the migration of pigment particles (characteristic elements) and allowed development of proper laser process.

  9. Ceramic-like open-celled geopolymer foam as a porous substrate for water treatment catalyst

    NASA Astrophysics Data System (ADS)

    Kovářík, T.; Křenek, T.; Pola, M.; Rieger, D.; Kadlec, J.; Franče, P.

    2017-02-01

    This paper presents results from experimental study on microstructural and mechanical properties of geopolymer-based foam filters. The process for making porous ceramic-like geopolymer body was experimentally established, consists of (a) geopolymer paste synthesis, (b) ceramic filler incorporation, (c) coating of open-celled polyurethane foam with geopolymer mixture, (d) rapid setting procedure, (e) thermal treatment. Geopolymer paste was based on potassium silicate solution n(SiO2)/n(K2O)=1.6 and powder mixture of calcined kaolin and precipitated silica. Various types of ceramic granular filler (alumina, calcined schistous clay and cordierite) were tested in relation to aggregate gradation design and particle size distribution. The small amplitude oscillatory rheometry in strain controlled regime 0.01% with angular frequency 10 rad/s was applied for determination of rheology behavior of prepared mixtures. Thermal treatment conditions were applied in the temperature range 1100 - 1300 °C. The developed porous ceramic-like foam effectively served as a substrate for highly active nanoparticles of selected Fe+2 spinels. Such new-type of nanocomposite was tested as a heterogeneous catalyst for technological process of advanced oxidative degradation of resistive antibiotics occurring in waste waters.

  10. Fabrication of micro accelerometer and magnetoresistive sensor directly on a ceramic substrate

    NASA Astrophysics Data System (ADS)

    Aoyagi, Seiji

    2012-06-01

    Micro-electro-mechanical systems (MEMS) sensors have movable parts: thus, it is difficult to handle them at fabrication because of the possibility of fracture. If a MEMS sensor could be fabricated not only on a silicon substrate but also on a ceramic substrate, which can be used for a package of the end product, the above-mentioned problem about handling would be solved, and its fabrication cost would be reduced. In this presentation, as demonstrations of the sensors directly fabricated on a ceramic package, an accelerometer and a magnetoresistive (MR) sensor are focused on. A micro accelerometer is proposed, which consists of a proof mass and ferroelectric substrate under it. A screen-printed barium titanate (BTO) film on an alumina substrate was employed as ferroelectrics. The sensitivity of the fabricated accelerometer was 0.1 pF g-1. A triaxis MR sensor is proposed, which detects not only x- and y-axes' magnetic field intensities but also that of the z-axis. Namely, not only azimuth but also angle of elevation of the sensor can be detected from triaxis components of the geomagnetic field. A permalloy (FeNi) plate is stood aside from the MR element. The plate distorts magnetic field and generates the x- (or y-) component from the originally z-directional field. A triaxis geomagnetic field was successfully detected by the fabricated sensor.

  11. Structural and Optical Properties of Thick Freestanding AlN Films Prepared by Hydride Vapor Phase Epitaxy

    DTIC Science & Technology

    2012-01-01

    electronic device applications, optoe- lectronic devices are the driving force of AlN based material research. Deep ultraviolet laser diodes and light...films deposited on Si and SiC substrates, removed from the substrates by etching techniques, were used as seeds to grow AlN boules with a diameter...ranging from 0.5 to 1.75 in. Selected wafers were employed as substrates to deposit epitaxial AlN films with improved structural and optical properties

  12. Range Analysis of Thermal Stress and Optimal Design for Tungsten-Rhenium Thin Film Thermocouples Based on Ceramic Substrates

    PubMed Central

    Zhang, Zhongkai; Tian, Bian; Yu, Qiuyue; Shi, Peng; Lin, Qijing; Zhao, Na; Jing, Weixuan; Jiang, Zhuangde

    2017-01-01

    A thermal stress range analysis of tungsten-rhenium thin film thermocouples based on ceramic substrates is presented to analyze the falling off and breakage problems caused by the mismatch of the thermal stresses in thin film thermocouples (TFTCs) and substrate, and nano-indentation experiments are done to measure and calculate the film stress to compare with the simulation results. Optimal design and fabrication of tungsten-rhenium TFTCs based on ceramic substrates is reported. Static high temperature tests are carried out, which show the optimization design can effectively reduce the damage caused by the thermal stress mismatch. PMID:28420088

  13. The color masking ability of a zirconia ceramic on the substrates with different values

    PubMed Central

    Tabatabaian, Farhad; Javadi Sharif, Mahdiye; Massoumi, Farhood; Namdari, Mahshid

    2017-01-01

    Background. The color masking ability of a restoration plays a significant role in coveringa discolored substructure; however, this optical property of zirconia ceramics has not been clearly determined yet. The aim of this in vitro study was to evaluate the color masking ability of a zirconia ceramic on substrates with different values. Methods. Ten zirconia disk specimens,0.5 mm in thickness and 10 mm in diameter, were fabricated by a CAD/CAM system. Four substrates with different values were prepared, including: white (control), light grey, dark grey, and black. The disk specimens were placed over the substratesfor spectrophotometric measurements. A spectrophotometer measured the L*, a*, and b* color attributes of the specimens. Additionally, ΔE values were calculated to determine the color differences between each group and the control,and were then compared with the perceptional threshold of ΔE=2.6. Repeated-measures ANOVA, Bonferroni, and one-sample t-test were used to analyze data. All the tests were carried out at 0.05 level of significance. Results. The means and standard deviations of ΔE values for the three groups of light grey, dark grey and black were 9.94±2.11, 10.40±2.09, and 13.34±1.77 units, respectively.Significant differences were detected between the groups in the ΔE values (P<0.0001).The ΔE values in all the groups were more than the predetermined perceptional threshold(ΔE>2.6) (P<0.0001). Conclusion. Within the limitations of this study, it was concluded that the tested zirconia ceramic did not exhibit sufficient color masking ability to hide the grey and black substrates. PMID:28413589

  14. Glass-(nAg, nCu) Biocide Coatings on Ceramic Oxide Substrates

    PubMed Central

    Esteban-Tejeda, Leticia; Malpartida, Francisco; Díaz, Luis Antonio; Torrecillas, Ramón; Rojo, Fernando; Moya, José Serafín

    2012-01-01

    The present work was focused on obtaining biocide coatings constituted by a glassy soda-lime matrix containing silver or copper nanoparticles on ceramic (alumina and zirconia based) substrates. Both glassy coatings showed a high biocide activity against Gram−, Gram+ bacteria and yeast, reducing cell numbers more than three logarithms. Silver nanoparticles had a significantly higher biocide activity than copper nanoparticles, since the lixiviation levels required to reduce cell numbers more than 3 logarithms was of almost 1–2 µg/cm2 in the case of silver nanoparticles, and 10–15 µg/cm2 for the copper nanoparticles. PMID:22427967

  15. Surface modification of graphite and ceramics with metals using induction heating

    NASA Astrophysics Data System (ADS)

    Ikeshoji, Toshi-Taka; Imoto, Akiko; Suzumura, Akio; Katori, Mana; Yamazaki, Takahisa; Sakamoto, Masahiro; Sakimichi, Satoshi

    2014-08-01

    In order to join metals to graphite or ceramics by soldering or brazing, a new surface modification method using induction heating was developed for graphite and ceramics. Such source metals as Cu, Ni, Cr, etc. were induction-heated in vacuum atmosphere and making deposited films on the deposition substrate, or the target substrate; graphite, AlN, Si3N4. The applicability of this method was investigated and the deposited layer was analysed by SEM observation, Auger electron spectrum analysis, X-ray diffractometry, and EPMA. By comparison of ambient vacuum pressure during deposition and the saturated vaopr pressure of source metals, this method was considered to utilize the sublimation phenomenon.

  16. Acoustic diagnosis for nondestructive evaluation of ceramic coatings on steel substrates

    SciTech Connect

    Aizawa, Tatsuhiko; Kihara, Junji; Ito, Manabu

    1995-11-01

    New methodology is proposed and developed to make quantitative nondestructive evaluation of TiN coated SKH steel substrates. Since the measured acoustic structure is in precise correspondence with the multi-layered elastic media, change of elastic properties by degradation and damage can be easily distinguished by the acoustic spectro microscopy. In particular, rather complex acoustic structure can be measured by the present method for ceramic coated steel substrate system, but it is completely described by the two-layer model in two dimensional elasticity. Typical example is the cut-off phenomenon where the dispersion curve for the leaky surface wave velocity is forced to be terminated by alternative activation of shear wave instead of it. The quantitative nondestructive diagnosis was developed on the basis of this predictable acoustic structure. Furthermore, the effect of coating conditions on the acoustic structure is also discussed to make residual stress distribution analysis in coating by the acoustic spectro microscopy with reference to the X-ray stress analysis. Some comments are made on further advancement of the present acoustic spectro microscopy adaptive to precise characterization of ceramic coatings and practical sensing system working in practice.

  17. Photoluminescence and its time evolution of AlN thin films

    NASA Astrophysics Data System (ADS)

    Sun, Jian; Wu, Jiada; Ling, Hao; Shi, Wei; Ying, Zhifeng; Li, Fuming

    2001-03-01

    We report the room temperature photoluminescence measurements of AlN thin films stimulated by above-band-gap pulsed light excitation. Two AlN thin films with different composition and structure were studied. One AlN film, prepared by pulsed laser deposition from sintered aluminum nitride ceramic target, contains oxide impurities. The other one, prepared by plasma assisted reactive pulsed laser deposition from pure aluminum metal target, is composed of pure AlN compound. Upon the irradiation of the samples by 193 nm excimer laser pulses, both the as-grown AlN thin films luminesce in the ultraviolet and the green regions, peaked at 440 and 400 nm, respectively. We also examined the time evolution of the luminescence and found that the entire broad luminescence band decays non-exponentially at approximately the same rate.

  18. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOEpatents

    Sarin, Vinod K.

    1990-01-01

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  19. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOEpatents

    Sarin, V.K.

    1990-08-21

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  20. Athermal fading of luminescence in Al2 O3 ceramic substrates

    NASA Astrophysics Data System (ADS)

    Terry, Ian; Kouroukla, Eftychia; Bailiff, Ian K.

    2015-03-01

    Retrospective dosimetry aims to reconstruct ionising radiation dose to populations following a radiological incident using materials not designed for that purpose. Sintered alumina ceramic can function as a dosimeter with its luminescence properties and related trapped charge storage mechanism. Its widespread use as a substrate in surface mount devices and incorporation in devices such as mobile phones make it a ubiquitous potential dosimeter. We investigated the optically (OSL) and thermally (TL) stimulated luminescence properties of sintered alumina substrates. In contrast to their single crystal analogue developed for personal dosimetry, Al2O3:C, the substrates exhibit a significant loss of trapped charge (fading) within hours following irradiation at RT that seriously limits their utility for dosimetry over an extended timescale. The fading rates of OSL and TL signals of 0402 resistors were analysed under various storage conditions (time and temperature), complemented by a study of their microstructure. The results support a model of athermal loss of trapped charge due to electron tunnelling from trapping states; this contrasting behaviour is attributed to a physical modification of the trap environment arising from the manufacturing process.

  1. Development of Ceramic Coating on Metal Substrate using Industrial Waste and Ore Minerals

    NASA Astrophysics Data System (ADS)

    Bhuyan, S. K.; Thiyagarajan, T. K.; Mishra, S. C.

    2017-02-01

    The technological advancement in modern era has a boon for enlightening human life; but also is a bane to produce a huge amount of (industrial) wastes, which is of great concern for utilization and not to create environmental threats viz. polution etc. In the present piece of research work, attempts have been made to utilize fly ash (wastes of thermal power plants) and along with alumina bearing ore i.e. bauxite, for developing plasma spray ceramic coatings on metals. Fly ash and with 10 and 20% bauxite addition is used to deposit plasma spray coatings on a metal substrate. The surface morphology of the coatings deposited at different power levels of plasma spraying investigated through SEM and EDS analysis. The coating thickness is measured. The porosity levels of the coatings are evaluated. The coating hardness isalso measured. This piece of research work will be beneficial for future development and use of industrial waste and ore minerals for high-valued applications.

  2. Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates

    NASA Astrophysics Data System (ADS)

    Seredin, P. V.; Kashkarov, V. M.; Arsentyev, I. N.; Bondarev, A. D.; Tarasov, I. S.

    2016-08-01

    Using X-ray diffraction analysis, atomic force microscopy, IR and UV spectroscopy, the properties of thin aluminium nitride films (<200 nm) that were obtained by ion-plasma reactive sputtering on GaAs substrates with different orientations were studied. The films of aluminium nitride can have a refractive index within the range of 1.6-4.0 for the wavelength band around 250 nm and an optical band-gap of 5 eV. It was shown that the morphology, surface composition and optical functional characteristics of AlN/GaAs heterophase systems can be controlled owing to the use of misoriented GaAs substrates as well choice of the technological parameters used for the film growth.

  3. Development of Bioactive Ceramic Coating on Titanium Alloy substrate for Biomedical Application Using Dip Coating Method

    NASA Astrophysics Data System (ADS)

    Asmawi, R.; Ibrahim, M. H. I.; Amin, A. M.; Mustafa, N.; Noranai, Z.

    2017-08-01

    Bioactive apatite, such as hydroxyapatite ceramic (HA), [Ca10(PO4)6(OH)2] has been extensively investigated for biomedical applications due to its excellent biocompatibility and tissue bioactivity properties. Its bioactivity provides direct bonding to the bone tissue. Because of its similarity in chemical composition to the inorganic matrix of bone, HA is widely used as implant materials for bone. Unfortunately, because of its poor mechanical properties,. this bioactive material is not suitable for load bearing applications. In this study, by the assistance of dip-coating technique, HA coatings were deposited on titanium alloy substrates by employing hydrothermal derived HA powder. The produced coatings then were oven-dried at 130°C for 1 hour and calcined at various temperature over the range of 200-800°C for 1 hour. XRD measurement showed that HA was the only phase present in the coatings. However coatings calcined at 800°C comprised a mixture of HA and tri-calcium phosphate (TCP). FTIR measurement showed the existence of hydroxyl, phosphate, and carbonate bands. PO4 - band became sharper and narrower with the increased of calcination temperature. FESEM observation showed that the coating is polycrystalline with individual particles of nano to submicron size and has an average particle size of 35 nm. The thickness of the coating are direcly propotional with the viscosity of coating slurry. It was shown that the more viscous coating slurry would produce a thicker ceramic coating. Mechanical properties of the coating were measured in term of adhesion strength using a Micro Materials Nano Test microscratch testing machine. The result revealed that the coating had a good adhesion to the titanium alloy substrate.

  4. Densification behavior of ceramic and crystallizable glass materials constrained on a rigid substrate

    NASA Astrophysics Data System (ADS)

    Calata, Jesus N.

    2005-11-01

    Constrained sintering is an important process for many applications. The sintering process almost always involves some form of constraint, both internal and external, such as rigid particles, reinforcing fibers and substrates to which the porous body adheres. The densification behavior of zinc oxide and cordierite-base crystallizable glass constrained on a rigid substrate was studied to add to the understanding of the behavior of various materials undergoing sintering when subjected to external substrate constraint. Porous ZnO films were isothermally sintered at temperatures between 900°C and 1050°C. The results showed that the densification of films constrained on substrates is severely reduced. This was evident in the sintered microstructures where the particles are joined together by narrower necks forming a more open structure, instead of the equiaxed grains with wide grain boundaries observed in the freestanding films. The calculated activation energies of densification were also different. For the density range of 60 to 64%, the constrained film had an activation energy of 391 +/- 34 kJ/mole compared to 242 +/- 21 kJ/mole for the freestanding film, indicating a change in the densification mechanism. In-plane stresses were observed during the sintering of the constrained films. Yielding of the films, in which the stresses dropped slight or remained unchanged, occurred at relative densities below 60% before the stresses climbed linearly with increasing density followed by a gradual relaxation. A substantial amount of the stresses remained after cooling. Free and constrained films of the cordierite-base crystallizable glass (glass-ceramic) were sintered between 900°C and 1000°C. The substrate constraint did not have a significant effect on the densification rate but the constrained films eventually underwent expansion. Calculations of the densification activation energy showed that, on average, it was close to 1077 kJ/mole, the activation energy of the glass

  5. Development of low dielectric constant alumina-based ceramics for microelectronic substrates

    SciTech Connect

    Wu, Shun Jackson

    1993-05-01

    The performance of high speed computers depends not only on IC chips, but also on the signal propagation speed between these chips. The signal propagation delay in a computer is determined by the dielectric constant of the substrate material to which the IC chips are attached. In this study, a ceramic substrate with a low dielectric constant (k ≈ 5.0) has been developed. When compared with the traditional alumina substrate (k ≈ 10.0), the new material corresponds to a 37% decrease in the signal propagation delay. Glass hollow spheres are used to introduce porosity (k = 1.0) to the alumina matrix in a controlled manner. A surface coating technique via heterogeneous nucleation in aqueous solution has been used to improve the high temperature stability of these spheres. After sintering at 1,400 C, isolated spherical pores are uniformly distributed in the almost fully dense alumina matrix; negligible amounts of matrix defects can be seen. All pores are isolated from each other. Detailed analyses of the chemical composition find that the sintered sample consists of α-alumina, mullite and residual glass. Mullite is the chemical reaction product of alumina and the glass spheres. Residual glass exists because current firing conditions do not complete the mullitization reaction. The dielectric constant of the sintered sample is measured and then compared with the predicted value using Maxwell`s model. Mechanical strength is evaluated by a four-point bending test. Although the flexural strength decreases exponentially with porosity, samples with 34% porosity (k ≈ 5.0) still maintain adequate mechanical strength for the proper operation of a microelectronic substrate.

  6. Enhancing the piezoelectric properties of flexible hybrid AlN materials using semi-crystalline parylene

    NASA Astrophysics Data System (ADS)

    Jackson, Nathan; Mathewson, Alan

    2017-04-01

    Flexible piezoelectric materials are desired for numerous applications including biomedical, wearable, and flexible electronics. However, most flexible piezoelectric materials are not compatible with CMOS fabrication technology, which is desired for most MEMS applications. This paper reports on the development of a hybrid flexible piezoelectric material consisting of aluminium nitride (AlN) and a semi-crystalline polymer substrate. Various types of semi-crystalline parylene and polyimide materials were investigated as the polymer substrate. The crystallinity and surfaces of the polymer substrates were modified by micro-roughening and annealing in order to determine the effects on the AlN quality. The AlN crystallinity and piezoelectric properties decreased when the polymer surfaces were treated with O2 plasma. However, increasing the crystallinity of the parylene substrate prior to deposition of AlN caused enhanced c-axis (002) AlN crystallinity and piezoelectric response of the AlN. Piezoelectric properties of 200 °C annealed parylene-N substrate resulted in an AlN d 33 value of 4.87 pm V‑1 compared to 2.17 pm V‑1 for AlN on polyimide and 4.0 pm V‑1 for unannealed AlN/parylene-N. The electrical response measurements to an applied force demonstrated that the parylene/AlN hybrid material had higher V pp (0.918 V) than commercial flexible piezoelectric material (PVDF) (V pp 0.36 V). The results in this paper demonstrate that the piezoelectric properties of a flexible AlN hybrid material can be enhanced by increasing the crystallinity of the polymer substrate, and the enhanced properties can function better than previous flexible piezoelectrics.

  7. Advanced ceramic matrix composites for high energy x-ray generation

    NASA Astrophysics Data System (ADS)

    Khan, Amir Azam; Labbe, Jean Claude

    2011-12-01

    High energy x-ray targets are the anodes used in high performance tubes, designed to work for long operating times and at high power. Such tubes are used in computed tomography (CT) scan machines. Usually the tubes used in CT scanners have to continuously work at high temperatures and for longer scan durations in order to get maximum information during a single scan. These anodes are composed of a refractory substrate which supports a refractory metallic coating. The present work is a review of the development of a ceramic metal composite based on aluminium nitride (AlN) and molybdenum for potential application as the substrate. This composite is surface engineered by coating with tungsten, the most popular material for high energy x-ray targets. To spray metallic coatings on the surface of ceramic matrix composites dc blown arc plasma is employed. The objective is to increase the performance and the life of an x-ray tube. Aluminium nitride-molybdenum ceramic matrix composites were produced by uniaxial hotpressing mixtures of AlN and Mo powders. These composites were characterized for their mechanical, thermal, electrical and micro-structural properties. An optimized composition was selected which contained 25 vol.% of metallic phase dispersed in the AlN matrix. These composites were produced in the actual size of an anode and coated with tungsten through dc blown arc plasma spraying. The results have shown that sintering of large size anodes is possible through uniaxial pressing, using a modified sintering cycle.

  8. Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

    SciTech Connect

    Soltani, A. Stolz, A.; Gerbedoen, J.-C.; Rousseau, M.; Bourzgui, N.; De Jaeger, J.-C.; Charrier, J.; Mattalah, M.; Barkad, H. A.; Mortet, V.

    2014-04-28

    Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane of sapphire substrate are studied. The physical properties of the film are determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent spectroscopy. The refractive index and the thermo-optic coefficients are determined by m-lines spectroscopy using the classical prism coupling technique. The optical losses of this planar waveguide are also measured in the spectral range of 450–1553 nm. The lower value of optical losses is equal to 0.7 dB/cm at 1553 nm. The optical losses due to the surface scattering are simulated showing that the contribution is the most significant at near infrared wavelength range, whereas the optical losses are due to volume scattering and material absorption in the visible range. The good physical properties and the low optical losses obtained from this planar waveguide are encouraging to achieve a wide bandgap optical guiding platform from these aluminum nitride thin films.

  9. Single crystalline AlN film formed by direct nitridation of sapphire using aluminum oxynitride buffer

    NASA Astrophysics Data System (ADS)

    Nakao, Wataru; Fukuyama, Hiroyuki

    2003-12-01

    A noble method forming single crystalline AlN films has been developed as a new substrate for blue/UV light emitters. Sapphire substrates have been nitrided by appropriate CO-N 2 gas mixtures saturated with graphite based on the chemical potential diagram of the Al-N-O-C system. The nitrided surface of sapphire consists of consecutive layers of AlN and γ-aluminum oxynitride (γ-ALON) with low-level dislocation density, where the γ-ALON layer spontaneously forms as an equilibrium phase and acts as a buffer. The lattice mismatch between sapphire substrate and AlN layer has been effectively reduced by using the γ-ALON buffer, which significantly attributes to the growth of single crystalline AlN.

  10. Excimer laser beam interaction with sintered Y{sub 2}O{sub 3}-doped aluminium nitride ceramic: Fundamentals and application

    SciTech Connect

    Detournay, N.; Kolev, K.; Robert, T.; Laude, L.D.; Brunel, M.

    1996-12-31

    Sintered aluminium nitride ceramic is most attractive for applications in modern electronic packaging, due to its high thermal conductivity and its high electrical resistivity. Among the sintering additives which are mentioned in the literature, Y{sub 2}O{sub 3} is used most often as sintering accelerator and densificator for AlN commercial ceramics. Since excimer lasers have recently proved to be efficient in ceramic processing for industry, the effects of excimer laser irradiation on sintered Y{sub 2}O{sub 3}-doped AlN ceramic have been studied in this work. Raman spectroscopy, low-angle X-ray diffraction and scanning electron microscopy equipped with energy-dispersive X-ray analysis are used for characterizing both the initial and processed materials. The results reveal that yttrium-containing phases which are present at the AlN grain boundaries play an essential role in coupling the ({lambda} = 248 nm) excimer laser beam with sintered material. Moreover, the laser-induced decomposition of these pre-existing complex phases and the subsequent spinel-like formation upon autocatalytic copper (or nickel) deposition are associated with (and explain) the excellent adhesion of the so-formed metal layer onto the ceramic substrate.

  11. Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Iwata, Shiro; Nanjo, Yoshiyuki; Okuno, Toshihiro; Kurai, Satoshi; Taguchi, Tsunemasa

    2007-04-01

    We have performed the homoepitaxial growth of high-crystalline quality Aluminium nitride (AlN) epilayers by the ammonia-gas source (GS) molecular-beam epitaxy method using the hydride vapor-phase epitaxy (HVPE) grown AlN thin layers as substrates. Surface morphologies and step-bunching structures of the homoepitaxially grown AlN epilayers were evaluated using in situ reflection high-energy electron diffraction (RHEED) patterns and scanning probe microscopy. It is noted that the step height of several monolayers was achieved on the surface of homoepitaxial layers. The homoepitaxial AlN thin films had the same or improved crystalline quality compared with the HVPE-grown AlN layers from X-ray rocking curve measurements, and its optical properties were investigated using cathodoluminescence measurements. Excitonic emission, which originates from the A free-exciton transition, was clearly observed in the present high-quality homoepitaxial AlN epilayers.

  12. Microstructural and Electrical Characterization of Barium Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

    DTIC Science & Technology

    2003-04-03

    Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition DISTRIBUTION: Approved for public...Society H2.4 Microstructural and Electrical Characterization of Barium Strontium Titanate- based Solid Solution Thin Films Deposited on Ceramic...investigated and report the microstructural and electrical characterization of selected barium strontium titanate-based solid solution thin films

  13. Crack Driving Forces in a Multilayered Coating System for Ceramic Matrix Composite Substrates

    NASA Technical Reports Server (NTRS)

    Ghosn, Louis J.; Zhu, Dongming; Miller, Robert A.

    2005-01-01

    The effects of the top coating thickness, modulus and shrinkage strains on the crack driving forces for a baseline multilayer Yttria-Stabilized-Zirconia/Mullite/Si thermal and environment barrier coating (TEBC) system for SiC/SiC ceramic matrix composite substrates are determined for gas turbine applications. The crack driving forces increase with increasing modulus, and a low modulus thermal barrier coating material (below 10 GPa) will have no cracking issues under the thermal gradient condition analyzed. Since top coating sintering increases the crack driving forces with time, highly sintering resistant coatings are desirable to maintain a low tensile modulus and maintain a low crack driving force with time. Finite element results demonstrated that an advanced TEBC system, such as ZrO2/HfO2, which possesses improved sintering resistance and high temperature stability, exhibited excellent durability. A multi-vertical cracked structure with fine columnar spacing is an ideal strain tolerant coating capable of reducing the crack driving forces to an acceptable level even with a high modulus of 50 GPa.

  14. The role of electrochemical migration and moisture adsorption on the reliability of metallized ceramic substrates

    NASA Astrophysics Data System (ADS)

    Warren, Garry W.; Wynblatt, Paul; Zamanzadeh, Mehrooz

    1989-03-01

    Data presented here have resulted from an extensive investigation into fundamental mechanisms involved in electrochemical migration and dendrite growth on metallized ceramic substrates. Significant new results are presented, and pertinent data from previous studies are outlined to provide a comprehensive, coherent analysis of the complex process of electrochemical migration. A number of critical issues are addressed including formation of an absorbed moisture layer and the effect of humidity on the thickness and conductivity of this layer. Migration has been quantified by examining dendrite morphology and dendrite growth rates. Morphology and growth rates are nearly identical for immersion tests in both bulk and thin layer electrolytes, but is quite different in absorbed layers of moisture. Immersion tests are still useful in determining the effects of solution variables that would be difficult or impossible to quantify in adsorbed moisture layers. In addition the maximum velocity theory for predicting dendrite growth rates can be used for predicting general trends, but requires further refinement for more precise predictions. Clearly the most important parameters affecting reliability are the adsorption of moisture combined with surface contamination.

  15. Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ren, Fan; Hao, Zhi-Biao; Hu, Jian-Nan; Zhang, Chen; Luo, Yi

    2010-11-01

    In this paper, the effects of thickness of AlN nucleation layer grown at high temperature on AlN epi-layer crystalline quality are investigated. Crack-free AlN samples with various nucleation thicknesses are grown on sapphire substrates by plasma-assisted molecular beam epitaxy. The AlN crystalline quality is analysed by transmission electron microscope and x-ray diffraction (XRD) rocking curves in both (002) and (102) planes. The surface profiles of nucleation layer with different thicknesses after in-situ annealing are also analysed by atomic force microscope. A critical nucleation thickness for realising high quality AlN films is found. When the nucleation thickness is above a certain value, the (102) XRD full width at half maximum (FWHM) of AlN bulk increases with nucleation thickness increasing, whereas the (002) XRD FWHM shows an opposite trend. These phenomena can be attributed to the characteristics of nucleation islands and the evolution of crystal grains during AlN main layer growth.

  16. Effect of different surface treatments on adhesion of In-Ceram Zirconia to enamel and dentin substrates.

    PubMed

    Saker, Samah; Ibrahim, Fatma; Ozcan, Mutlu

    2013-08-01

    Resin bonding of In-Ceram Zirconia (ICZ) ceramics is still a challenge, especially for minimally invasive applications. This study evaluated the adhesion of ICZ to enamel and dentin after different surface treatments of the ceramic. ICZ ceramic specimens (diameter: 6 mm; thickness: 2 mm) (N = 100) were fabricated following the manufacturer's instructions and randomly assigned to 5 groups (n = 20), according to the surface treatment methods applied. The groups were as follows: group C: no treatment; group SB: sandblasting; group SCS-S: CoJet+silane; group SCS-P: CoJet+Alloy Primer; group GE-S: glaze+ hydrofluoric acid etching (9.6%) for 60 s+silane. Each group was randomly divided into two subgroups to be bonded to either enamel or dentin (n = 10 per group) using MDP-based resin cement (Panavia F2.0). All the specimens were subjected to thermocycling (5000x, 5°C-55°C). The specimens were mounted in a universal testing machine and tensile force was applied to the ceramic/cement interface until failure occurred (1 mm/min). After evaluating all the debonded specimens under SEM, the failure types were defined as either "adhesive" with no cement left on the ceramic surface (score 0) or "mixed" with less than 1/2 of the cement left adhered to the surface with no cohesive failure of the substrate (score 1). The data were statistically evaluated using 2-way ANOVA and Tukey's tests (α = 0.05). The highest tensile bond strength for the enamel surfaces was obtained in group GE-S (18.1 ± 2 MPa) and the lowest in group SB (7.1 ± 1.4 MPa). Regarding dentin, group CSC-P showed the highest (12 ± 1.3 MPa) and SB the lowest tensile bond strength (5.7 ± 0.4 MPa). Groups SB, CSC-S, CSC-P, and GE-S did not show significant differences between the different surface treatments on either enamel or dentin surfaces (p < 0.05, p < 0.001, respectively). Groups CSC-P and GE-S presented similar bond strength for both the enamel and dentin substrates (p < 0.8 and p < 0.9), respectively

  17. Morphology of AlN whiskers grown by reacting N2 gas and Al vapor

    NASA Astrophysics Data System (ADS)

    Matsumoto, M.; Saitou, H.; Takeuchi, Y.; Harada, S.; Tagawa, M.; Ujihara, T.

    2017-06-01

    We have investigated the morphology of AlN whiskers on a polycrystalline AlN substrate by using Fe-Al alloy melts under the different synthesis conditions. Formation density of the AlN whiskers increases and the diameter of the whisker decreases with increasing Al content of the Fe-Al alloy melt. Most of the AlN whiskers were zigzag shape with the hexagonal cross section. The longitudinal direction was the [0001] direction. The facet with the zigzag shape was the {1 1 bar 01} or {1 1 bar 0 1 bar } pyramidal plane and the period of the zigzag facet was almost constant. The average diameter of the whiskers and the period of the zigzag facet decrease with increasing Al content. At the initial stage of the whisker formation, the island of AlN formed on the AlN substrate and the pyramidal facet grows via step-flow growth. From the observation, we discussed the possible mechanism for the formation of the zigzag-shape AlN whiskers.

  18. Low-temperature (< 100 C) growth of AlN by ion beam assisted deposition

    SciTech Connect

    Karimy, H.; Tobin, E.; Bricault, R.; Cremins-Costa, A.; Colter, P.; Namavar, F.; Perry, D.

    1996-12-31

    During the past few years, there has been growing interest in aluminum nitride (AlN) thin films because of their excellent optical, electrical, chemical, mechanical and high-temperature properties. Ion beam assisted deposition (IBAD) was used to deposit AlN films on flat and curved substrates, including Si, SIMOX, sapphire, quartz, aluminum, stainless steel, and carbon, at temperatures substantially below 100 C. The objective as to enhance the physical and mechanical properties of AlN film by controlling the crystal size and structures. Experimental results, as obtained by Rutherford backscattering spectroscopy (RBS) show the formation of stoichiometric AlN. Plan-view/cross-sectional transmission electron microscopy (TEM), clearly demonstrated the formation of a smooth, uniform AlN film. Electron diffraction and dark field TEM studies clearly show the growth of AlN crystallites with cubic and/or hexagonal structures and dimensions of 30 to 100 {angstrom}. The films are transparent and have good adhesion to all substrates. In addition to excellent high temperature (up to 1,050 C measured) and chemical stability (shown through a variety of acid tests), these films have demonstrated extreme hardness, greater than two times that of bulk AlN.

  19. AlN hollow-nanofilaments by electrospinning

    NASA Astrophysics Data System (ADS)

    Gerges, Tony; Salles, Vincent; Bernard, Samuel; Journet, Catherine; Jaurand, Xavier; Chiriac, Rodica; Ferro, Gabriel; Brioude, Arnaud

    2015-02-01

    We present for the first time an original method to elaborate AlN nanofilaments (NFs) by using a preceramic-based electrospinning process. Initially, an Al-containing precursor (poly(ethylimino)alane) is mixed with an organic spinnable polymer to be electrospun and generate polymeric filaments with a homogeneous diameter. A ceramization step at 1000 °C under ammonia and a crystallization step at 1400 °C under nitrogen are performed to get the final product made of AlN NFs with a diameter ranging from 150 to 200 nm. Studies carried out by high resolution electron microscopy and 3D tomography show their regular morphology, with high chemical purity and polycrystalline nature.

  20. AlN hollow-nanofilaments by electrospinning.

    PubMed

    Gerges, Tony; Salles, Vincent; Bernard, Samuel; Journet, Catherine; Jaurand, Xavier; Chiriac, Rodica; Ferro, Gabriel; Brioude, Arnaud

    2015-02-27

    We present for the first time an original method to elaborate AlN nanofilaments (NFs) by using a preceramic-based electrospinning process. Initially, an Al-containing precursor (poly(ethylimino)alane) is mixed with an organic spinnable polymer to be electrospun and generate polymeric filaments with a homogeneous diameter. A ceramization step at 1000 °C under ammonia and a crystallization step at 1400 °C under nitrogen are performed to get the final product made of AlN NFs with a diameter ranging from 150 to 200 nm. Studies carried out by high resolution electron microscopy and 3D tomography show their regular morphology, with high chemical purity and polycrystalline nature.

  1. Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire

    NASA Astrophysics Data System (ADS)

    Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa; Fukuyama, Hiroyuki; Kaur, Jesbains; Kuwano, Noriyuki

    2016-02-01

    The annealing of an AlN buffer layer in a carbon-saturated N2-CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650-1700 °C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy (MOVPE), and was annealed at 1700 °C for 1 h. We fabricated a 2-µm-thick AlN layer on the annealed AlN buffer layer by MOVPE. The full widths at half maximum of the (0002)- and (10\\bar{1}2)-plane X-ray rocking curves were 16 and 154 arcsec, respectively, and the threading dislocation density was 4.7 × 108 cm-2.

  2. Surface modification of ceramic and metallic alloy substrates by laser raster-scanning

    NASA Astrophysics Data System (ADS)

    Ramos Grez, Jorge Andres

    This work describes the feasibility of continuous wave laser-raster scan-processing under controlled atmospheric conditions as employed in three distinct surface modification processes: (a) surface roughness reduction of indirect-Selective Laser Sintered 420 martensitic stainless steel-40 wt. % bronze infiltrated surfaces; (b) Si-Cr-Hf-C coating consolidation over 3D carbon-carbon composites cylinders; (c) dendritic solidification structures of Mar-M 247 confined powder precursor grown from polycrystalline Alloy 718 substrates. A heat transfer model was developed to illustrate that the aspect ratio of the laser scanned pattern and the density of scanning lines play a significant role in determining peak surface temperature, heating and cooling rates and melt resident times. Comprehensive characterization of the surface of the processed specimens was performed using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), optical metallography, X-ray diffraction (XRD), and, in certain cases, tactile profilometry. In Process (a), it was observed that a 24% to 37% roughness Ra reduction could be accomplished from the as-received value of 2.50+/-0.10 microns for laser energy densities ranging from 350 to 500 J/cm2. In Process (b), complete reactive wetting of carbon-carbon composite cylinders surface was achieved by laser melting a Si-Cr-Hf-C slurry. Coatings showed good thermal stability at 1000°C in argon, and, when tested in air, a percent weight reduction rate of -6.5 wt.%/hr was achieved. A soda-glass overcoat applied over the coated specimens by conventional means revealed a percent weight reduction rate between -1.4 to -2.2 wt.%/hr. Finally, in Process (c), microstructure of the Mar-M 247 single layer deposits, 1 mm in height, grown on Alloy 718 polycrystalline sheets, resulted in a sound metallurgical bond, low porosity, and uniform thickness. Polycrystalline dendrites grew preferentially along the [001] direction from the substrate up to 400

  3. Hot-wall low pressure chemical vapor deposition growth and characterization of AlN thin films

    NASA Astrophysics Data System (ADS)

    Heinselman, Karen N.; Brown, Richard J.; Shealy, James R.

    2017-10-01

    Hot-wall low pressure chemical vapor deposition (LPCVD) of highly crystalline epitaxial thin-film AlN grown on silicon (1 1 1) substrates is reported for the first time. Deposition was carried out in a modified commercial LPCVD at 1000 °C and 2 torr. Preflow time for the aluminum precursor, trimethylaluminum, was varied to nucleate Al, and the resulting variation in X-ray diffraction (XRD) crystalline AlN peaks is presented. With a 30 s dichlorosilane (SiH2Cl2) pretreatment at 700 °C and the optimal TMAl preflow time, the FWHM of the resulting film was 1116 arcsec for the AlN (0 0 2) 2 θ - ω peak, and the AlN (0 0 2) peak had an omega rocking curve FWHM of 1.6°. This AlN film was shown to be epitaxially aligned to the Si (1 1 1) substrate.

  4. Biaxially textured YBa 2Cu 3O 7-x films deposited on polycrystalline flexible yttria-stabilized zirconia ceramic substrates

    NASA Astrophysics Data System (ADS)

    Varanasi, C. V.; Burke, J.; Lu, R.; Wu, J.; Brunke, L.; Chuck, L.; Smith, H. E.; Maartense, I.; Barnes, P. N.

    2008-07-01

    Biaxially textured YBa2Cu3O7-x (YBCO) films were grown on polycrystalline flexible yttria-stabilized zirconia (YSZ) ceramic substrates (Ceraflex) buffered with MgO and LaMnO3 layers. These substrates were initially coated with silica glass to obtain a smooth surface and then biaxially textured MgO buffer layers were deposited by ion beam assisted deposition (IBAD-MgO). Lanthanum manganate (LMO) cap layers and YBCO layers were then deposited by the pulsed laser ablation method. Highly textured YBCO films with a full width half maximum (FWHM) of 6.75° in (1 1 0) phi scans and a FWHM ∼ 5° in (2 0 0) omega scans were obtained. An initial deposition yielded samples with a Tc > 88 K and a self-field magnetization Jc of 2 × 105 A/cm2 at 77 K. A secondary ion mass spectrometry (SIMS) depth profile of the samples indicated that with the present deposition condition, some La, Mn and Mg diffusion into the YBCO layers is possible and this may reduce the Jc in the self-field. The yield strength (YS) of uncoated Ceraflex substrates was compared with that of metallic substrates and it was found that Ceraflex substrates can have a YS at least 4-5 times higher than the YS of biaxially textured Ni-5 at.%W substrates and ∼1.5 times that of HastelloyTM substrates.

  5. Preparation of highly c-axis oriented AlN thin films on Hastelloy tapes with Y2O3 buffer layer for flexible SAW sensor applications

    NASA Astrophysics Data System (ADS)

    Peng, Bin; Jiang, Jianying; Chen, Guo; Shu, Lin; Feng, Jie; Zhang, Wanli; Liu, Xinzhao

    2016-02-01

    Highly c-axis oriented aluminum nitrade (AlN) films were successfully deposited on flexible Hastelloy tapes by middle-frequency magnetron sputtering. The microstructure and piezoelectric properties of the AlN films were investigated. The results show that the AlN films deposited directly on the bare Hastelloy substrate have rough surface with root mean square (RMS) roughness of 32.43nm and its full width at half maximum (FWHM) of the AlN (0002) peak is 12.5∘. However, the AlN films deposited on the Hastelloy substrate with Y2O3 buffer layer show smooth surface with RMS roughness of 5.46nm and its FWHM of the AlN (0002) peak is only 3.7∘. The piezoelectric coefficient d33 of the AlN films deposited on the Y2O3/Hastelloy substrate is larger than three times that of the AlN films deposited on the bare Hastelloy substrate. The prepared highly c-axis oriented AlN films can be used to develop high-temperature flexible SAW sensors.

  6. Fabrication of Micro Accelerometer Using Screen Printed BaTiO3 Film on a Ceramic Substrate and Its Characterization

    NASA Astrophysics Data System (ADS)

    Suzuki, Masato; Kobayashi, Yuta; Aoyagi, Seiji; Tajiri, Hiroyuki; Nagahata, Takaya

    The concept of MEMS sensors directly fabricated on a ceramic substrate, which can be used for a package of end product, was proposed. As one of such sensors, a micro accelerometer utilizing a fringe capacitance formed in a ferroelectric material was focused on. For this sensor, in stead of a previously used bulk PZT plate, a screen-printed BaTiO3 (BTO) film on a ceramic alumina substrate was herein employed. A screen-printing method can save the amount of raw material of the film, because a comparatively thick film can be deposited only on a specified area. Moreover, BTO does not contain harmful lead material. The optimal condition for fabricating a BTO film on an alumina substrate with minimum unwanted surface defects was experimentally searched. The number of defects was decreased by employing a metal barrier of Pt layer underneath BTO, and by setting the annealing temperature for crystallization to a higher value of 1,400°C. A comparatively high relative dielectric constant of εr =926 was achieved. An accelerometer using a BTO film was practically fabricated. The sensitivity of it was estimated as 0.1 pF/g, which is degraded a little compare with the previously developed accelerometer using a PZT plate; however, the order is same.

  7. Effects of coronal substrates and water storage on the microhardness of a resin cement used for luting ceramic crowns

    PubMed Central

    de MENDONÇA, Luana Menezes; PEGORARO, Luiz Fernando; LANZA, Marcos Daniel Septímio; PEGORARO, Thiago Amadei; de CARVALHO, Ricardo Marins

    2014-01-01

    Composite resin and metallic posts are the materials most employed for reconstruction of teeth presenting partial or total destruction of crowns. Resin-based cements have been widely used for cementation of ceramic crowns. The success of cementation depends on the achievement of adequate cement curing. Objectives To evaluate the microhardness of Variolink® II (Ivoclar Vivadent, Schaan, Liechtenstein), used for cementing ceramic crowns onto three different coronal substrate preparations (dentin, metal, and composite resin), after 7 days and 3 months of water storage. The evaluation was performed along the cement line in the cervical, medium and occlusal thirds on the buccal and lingual aspects, and on the occlusal surface. Material and Methods Thirty molars were distributed in three groups (N=10) according to the type of coronal substrate: Group D- the prepared surfaces were kept in dentin; Groups M (metal) and R (resin)- the crowns were sectioned at the level of the cementoenamel junction and restored with metallic cast posts or resin build-up cores, respectively. The crowns were fabricated in ceramic IPS e.max® Press (Ivoclar Vivadent, Schaan, Liechtenstein) and luted with Variolink II. After 7 days of water storage, 5 specimens of each group were sectioned in buccolingual direction for microhardness measurements. The other specimens (N=5) were kept stored in deionized water at 37ºC for three months, followed by sectioning and microhardness measurements. Results Data were first analyzed by three-way ANOVA that did not reveal significant differences between thirds and occlusal surface (p=0.231). Two-way ANOVA showed significant effect of substrates (p<0.001) and the Tukey test revealed that microhardness was significantly lower when crowns were cemented on resin cores and tested after 7 days of water storage (p=0.007). Conclusion The type of material employed for coronal reconstruction of preparations for prosthetic purposes may influence the cement properties

  8. Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

    SciTech Connect

    Pobedinskas, P. Hardy, A.; Van Bael, M. K.; Haenen, K.; Degutis, G.; Dexters, W.

    2014-02-24

    Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E{sub 1}(TO) and E{sub 2}{sup 2} phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E{sub 1}(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E{sub 2}{sup 2} peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

  9. Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

    NASA Astrophysics Data System (ADS)

    Pobedinskas, P.; Degutis, G.; Dexters, W.; Hardy, A.; Van Bael, M. K.; Haenen, K.

    2014-02-01

    Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E1(TO) and E22 phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E1(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E22 peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

  10. Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liu, B.; Gao, J.; Wu, K. M.; Liu, C.

    2009-05-01

    AlN films were grown at 785 ∘C on (0001) sapphire substrates by radio-frequency assisted molecular beam epitaxy. Post-growth rapid thermal annealing (RTA) was carried out from 900 to 1200 ∘C for 10 s in flowing N 2. The morphological and structural properties of the AlN epilayers before and after the RTA were studied by atomic force microscopy, x-ray diffraction and transmission electron microscopy. It is found that the threading dislocations can be decreased to an order of magnitude by using an interlayer growth method. The surface roughness (RMS) of the AlN thin films becomes larger with the increase of annealing temperature. The full width at half maximum of AlN (0002) rocking curve reaches its minimum after the RTA at 1000 ∘C.

  11. Low-temperature plasma-assisted growth of optically transparent, highly oriented nanocrystalline AlN

    NASA Astrophysics Data System (ADS)

    Mirpuri, C.; Xu, S.; Long, J. D.; Ostrikov, K.

    2007-01-01

    Optically transparent, highly oriented nanocrystalline AlN(002) films have been synthesized using a hybrid plasma enhanced chemical vapor deposition and plasma-assisted radio frequency (rf) magnetron sputtering process in reactive Ar+N2 and Ar+N2+H2 gas mixtures at a low Si(111)/glass substrate temperature of 350 °C. The process conditions, such as the sputtering pressure, rf power, substrate temperature, and N2 concentration were optimized to achieve the desired structural, compositional, and optical characteristics. X-ray diffractometry reveals the formation of highly c-oriented AlN films at a sputtering pressure of 0.8 Pa. Field emission scanning electron microscopy suggests the uniform distribution of AlN grains over large surface areas and also the existence of highly oriented in the (002) direction columnar structures of a typical length ˜100-500 nm with an aspect ratio of ˜7-15. X-ray photoelectron and energy dispersive x-ray spectroscopy suggest that films deposited at a rf power of 400 W feature a chemically pure and near stoichiometric AlN. The bonding states of the AlN films have been confirmed by Raman and Fourier transform infrared spectroscopy showing strong E2 (high) and E1 transverse optical phonon modes. Hydrogenated AlN films feature an excellent optical transmittance of ˜80% in the visible region of the spectrum, promising for advanced optical applications.

  12. Correlation between energy deposition and AlN crystal growth induced by ion bombardment

    NASA Astrophysics Data System (ADS)

    Kenzo, Kobayashi; Masaya, Iwaki; Takanobu, Fujihana

    1991-07-01

    A study has been made of the effects of ion (He, O, N and Ne) bombardment on the crystallization of AlN. AlN 0.8 thin films 100 nm thick were deposited on Si (111) wafers by an activated reactive evaporation method in a nitrogen atmosphere. He, O, N and Ne ions were bombarded onto films at room temperature to a dose of 5 × 10 17 ions/cm 2, using an energy of 150 keV. This energy was chosen to place the average projected range of the ions in the substrate interior. XRD measurements were carried out using CuK α radiation (40 keV, 30 mA). The quantities of energy deposited in the films, through ionization and by recoil atoms, were calculated using TRIM-88. It is concluded that ion bombardment of AlN 0.8 thin films causes crystal growth of AlN, with the c-axis oriented perpendicular to the substrate plane, near to room temperature without any thermal annealing. Energy deposition through the ionization plays an essential role in the crystallization of AlN in AlN x thin films.

  13. Color match of a feldspathic ceramic CAD-CAM material for ultrathin laminate veneers as a function of substrate shade, restoration color, and thickness.

    PubMed

    Sarı, Taylan; Ural, Çağrı; Yüzbaşıoğlu, Emir; Duran, İbrahim; Cengiz, Seda; Kavut, İdris

    2017-05-26

    The final color of a ceramic restoration, especially an ultrathin veneer, is important, but selecting the correct shade is difficult because the substrate can affect the final color of the restoration. The purpose of this in vitro study was to investigate the effect of substrate shade and thickness on the final color of ultrathin laminate veneers milled from feldspathic ceramic and to present a simple methodology with which a clinician can visualize the effects of substrate color, ceramic thickness, and prefabricated computer-aided design and computer-aided manufacturing (CAD-CAM) block color on the final color of the restoration. All specimens were fabricated by slicing CAD-CAM feldspathic ceramic material with a precision cutter into 12×10-mm slices of approximately 0.35, 0.55, 0.75, and 1.55 mm in thickness with 10 different colors (0M1-1M1-1M2-2M1-2M2-2M3-3M1-3M2-3M3-4M1). As a background substrate, composite resin disks (12×10×2 mm) were fabricated with different shades (0M1 S, 1M1 S, 2M3 S, 3M2 S, 4M3 S, 5M3 S). The CIELab values of the polished surfaces of each specimen were measured on a background (white or simulated foundation) with a spectrophotometer by a single experienced operator, and color differences (ΔE) were calculated. Mean ±SD values were calculated and subjected to ANOVA with 2 variables (substrate and ceramic color) (α=.05). Combinations of a lighter substrate shade and a lighter value ceramic restoration and of a darker substrate shade and darker value ceramic restoration only changed the final color of the restoration minimally. The final color of a dental restoration is affected by the thickness of the restoration, the substrate color, and the ceramic color. Lighter and darker substrate colors show more color changes, and thin veneers cannot mask the substrate color. Copyright © 2017 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

  14. Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth

    NASA Astrophysics Data System (ADS)

    Guo, Yanmin; Fang, Yulong; Yin, Jiayun; Zhang, Zhirong; Wang, Bo; Li, Jia; Lu, Weili; Feng, Zhihong

    2017-04-01

    Three dimensional (3D) and two dimensional (2D) alternation growth was used to grow AlN epitaxial layers on sapphire substrates. AlN samples grown using this technique have higher crystalline quality and lower dislocation density than samples grown using only 3D or 2D growth modes as witnessed by the high-resolution X-ray diffraction. Smooth atomic terraces with root mean square roughness of 0.107 nm were observed using atomic force microscopy (AFM) when the 3D and 2D AlN were 75 nm and 425 nm, respectively. This sample possesses single crystallographic orientation along the c-axis identified by Raman spectroscopy. Furthermore, the 3D/2D alternating growth mode modulates internal stress in AlN epitaxial layer by adjusting 2D AlN thickness, and the mechanism was studied in detail.

  15. Study on deposition technique and properties of Pd/Ag alloy film sensor supported on ceramic substrate

    NASA Astrophysics Data System (ADS)

    Geng, Z. T.; He, Q.; Jin, C. G.

    2016-07-01

    Developing high-quality hydrogen sensitive material is the core part of hydrogen sensor, whose performance is determined by the sensitive response, reproducibility and recovery of hydrogen material etc. In order to overcome the defects of hydrogen embrittlement in previous hydrogen sensor which were based on the pure palladium, sliver as the second component added to the palladium was studied. Using photochemical etching technology to produce a bent metal mask, the mask is put on the ceramic substrate. Firstly, the thin film of Ta2O5 as a transition layer grew on the ceramic substrate. Then, a series of Pd/Ag alloy film sensors were prepared, and each performance characterization of Pd/Ag alloy film was studied. Testing results indicated that the thin film had a good linear output performance at 0∼⃒30% hydrogen concentration range, and demonstrates a high responsiveness and good repeatability. With temperature increasing, the strength of the responsive signal of the Pd/Ag alloy film decreases and its responsive time was also shortened.

  16. Super Smooth Modification of Al2O3 Ceramic Substrate by High Temperature Glaze of CaO-Al2O3-SiO2 System

    NASA Astrophysics Data System (ADS)

    Zhang, Jihua; Zhen, Shanxue; Yang, Lijun; Lou, Feizhi; Chen, Hongwei; Yang, Chuanren

    2011-01-01

    The rough surface of ceramic substrate is an obstacle for the scale down of line-width for thin film passive integrated devices (PID). In this paper, a modification method for Al2O3 ceramic substrate with super smooth in surface was proposed. Coating a layer of CaO-Al2O3-SiO2 (CAS) glass was performed to flat the rough surface of alumina substrate by sol-gel method. It was found that addition of 0.06% V2O5 can inhibit the recrystallization of the glaze. The root-mean-square (RMS) roughness of the glazed substrates reached a surprising flatness as small as 0.5 nm, and its melting temperature is higher than 1300 °C. This substrate with super flatness and high temperature endurance may be promising for high performance thin film devices.

  17. Effect of emulsified feeding of oily substrate via submerged ceramic membranes on surfactant production in Pseudomonas aeruginosa fermentation.

    PubMed

    Dhariwal, Anuj; Mohrdieck, Markus; Leitermann, Frank; Arjol, Ignacio Martin; Manresa, Angels; Syldatk, Christoph; Janke, Hans Dieter; Chmiel, Horst

    2008-08-01

    Aqueous two-phase systems often face mass transfer limitations due to very poor miscibility of the fluids, and to enhance the homogeneity (or emulsification) in the reaction volume, high energy inputs are required which result in high shear forces in the culture medium. For the purposes of emulsification, microporous systems have advantages over other conventional methods due to mild operating conditions and narrow droplet-size distribution. In this study, emulsification within the culture volume was achieved by feeding the oily substrate (dispersed phase) into the aqueous medium (dispersion phase) via ceramic membranes integrated in the bioreactor. The method was investigated for bioprocesses aimed at producing rhamnolipids and polyhydroxyalkanoates (PHA). Better homogenization of the mixed volume and hence improved consumption of oily substrate was successful. Surfactants are produced by various bacterial cultures, especially Pseudomonas aeruginosa species, when oil is present as the only carbon source. Are surfactants produced only as a result of bacteria feeding on the oily substrate, or as a requirement to feed on the oily substrate, owing to their surface-active characteristics? This paper also intends to draw some conclusions in this respect.

  18. High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm(2).

    PubMed

    Tsai, M L; Liao, J H; Yeh, J H; Hsu, T C; Hon, S J; Chung, T Y; Lai, K Y

    2013-11-04

    High-voltage thin-film GaN LEDs with the emission wavelength of 455 nm were fabricated on ceramic substrates (230 W/m · K). The high-voltage operation was achieved by three cascaded sub-LEDs with dielectric passivation and metal bridges conformally deposited on the side walls. Under the driving power of 670 W/cm(2), the high-voltage LEDs exhibit much alleviated efficiency droop and the operative temperature below 80 °C. The excellent performances were attributed to the improved current spreading within each sub-LED and the superior heat sinking of the ceramic substrate.

  19. Quality-enhanced AlN epitaxial films grown on c-sapphire using ZnO buffer layer for SAW applications

    NASA Astrophysics Data System (ADS)

    Fu, Sulei; Li, Qi; Gao, Shuang; Wang, Guangyue; Zeng, Fei; Pan, Feng

    2017-04-01

    AlN epitaxial films with a thin ZnO buffer layer were successfully deposited on c-sapphire by DC magnetron sputtering for surface acoustic wave (SAW) applications. The effect of ZnO buffer layer thickness on structural properties of AlN epitaxial films and the related SAW properties were investigated systematically. The results revealed that a thin ZnO buffer layer can significantly enhance the crystalline quality of AlN films and release the strain in AlN films. The AlN films were epitaxially grown on ZnO buffered-substrate with orientation relationship of (0001) [ 10 1 bar 0 ] AlN//(0001) [ 10 1 bar 0 ] ZnO//(0001) [2 bar 110 ] Al2O3. High frequency SAW devices with a center frequency of 1.4 GHz, a phase velocity of 5600 m/s were achieved on the obtained AlN films. The optimum ZnO buffer layer thickness was found to be 10 nm, resulting in high-quality epitaxial AlN films with a FWHM value of the rocking curve of 0.84°, nearly zero stress and low insertion loss of SAW devices. This work offers an effective approach to achieve high-quality AlN epitaxial films on sapphire substrates for the applications of AlN-based SAW devices.

  20. Controlled Growth of Conductive AlN Thin Films by Plasma-Assisted Reactive Evaporation

    NASA Astrophysics Data System (ADS)

    Alizadeh, M.; Goh, B. T.; Rahman, S. A.

    2017-07-01

    In this work, the growth of conductive AlN thin films by plasma-assisted reactive evaporation at different filament-to-substrate distances was presented and discussed. The elemental composition, surface morphology, structural, optical, and electrical properties of the films were examined by energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy, grazing incidence X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), optical measurement, and current-voltage ( I- V) characterizations. The electrical study revealed that the films are conductive, as ohmic conductivity was observed from I- V results. The GIXRD results of AlN thin films showed that by decreasing the distance, the intensity of the peak corresponding to metallic Al decreases while that of AlN increases. EDX and XPS results indicated that at shorter distances, the incorporation of N into the AlN films is enhanced. This was further confirmed by FTIR results, which showed that the incorporation of Al-N bonds in the grown AlN films was enhanced by decreasing the distance. It was shown that the optical absorption edge of the grown films shifts from the near-ultraviolet (UV) region to far-UV as the distance is decreased.

  1. PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

    NASA Astrophysics Data System (ADS)

    Liu, Sanjie; Peng, Mingzeng; Hou, Caixia; He, Yingfeng; Li, Meiling; Zheng, Xinhe

    2017-04-01

    Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film and Si (100). It is consistent with high-resolution image of the sharp interface analyzed by transmission electron microscope (TEM). The highly uniform thickness throughout the 2-inch size AlN film with blue covered surface was determined by spectroscopic ellipsometry (SE). Grazing incident X-ray diffraction (GIXRD) patterns indicate that the AlN films are polycrystalline with wurtzite structure and have a tendency to form (002) preferential orientation with increasing of the thickness. The obtained AlN films could open up a new approach of research in the use of AlN as the template to support gallium nitride (GaN) growth on silicon substrates.

  2. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ≤0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 °C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 °C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ≤ 400 °C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ≥ 500 °C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 °C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  3. Highly piezoelectric co-doped AlN thin films for wideband FBAR applications.

    PubMed

    Yokoyama, Tsuyoshi; Iwazaki, Yoshiki; Onda, Yosuke; Nishihara, Tokihiro; Sasajima, Yuichi; Ueda, Masanori

    2015-06-01

    We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and the theoretical piezoelectric properties were confirmed by experimentally depositing thin films of magnesium (Mg) and zirconium (Zr) co-doped AlN (Mg-Zr-doped AlN). The Mg-Zrdoped AlN thin films were prepared on Si (100) substrates by using a triple-radio-frequency magnetron reactive co-sputtering system. The crystal structures and piezoelectric coefficients (d33) were investigated as a function of the concentrations, which were measured by X-ray diffraction and a piezometer. The results show that the d33 of Mg-Zr-doped AlN at total Mg and Zr concentrations (both expressed as β) of 0.35 was 280% larger than that of pure AlN. The experimentally measured parameter of the crystal structure and d33 of Mg-Zr-doped AlN (plotted as functions of total Mg and Zr concentrations) were in very close agreement with the corresponding values obtained by the first-principle calculations. Thin film bulk acoustic wave resonators (FBAR) employing (Mg,Zr)0.13Al0.87N and (Mg, Hf)0.13 Al0.87N as a piezoelectric thin film were fabricated, and their resonant characteristics were evaluated. The measured electromechanical coupling coefficient increased from 7.1% for pure AlN to 8.5% for Mg-Zr-doped AlN and 10.0% for Mg- Hf-doped AlN. These results indicate that co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) films have potential as piezoelectric thin films for wideband RF applications.

  4. Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Liu, Ting; Zhang, Jicai; Su, Xujun; Huang, Jun; Wang, Jianfeng; Xu, Ke

    2016-05-01

    Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN.

  5. Nucleation and growth of (10¯11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

    PubMed Central

    Liu, Ting; Zhang, Jicai; Su, Xujun; Huang, Jun; Wang, Jianfeng; Xu, Ke

    2016-01-01

    Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN. PMID:27185345

  6. Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Ming; Chen, Yung-Yu; Felmetsger, Valery V.; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G.; Pisano, Albert P.

    2013-02-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C-SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C-SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C-SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C-SiC/Si multilayer structure exhibits a phase velocity of 5528 m s-1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C-SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C-SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C-SiC layers are applicable to timing and sensing applications in harsh environments.

  7. Nanoindentation of a hard ceramic coating formed on a soft substrate

    NASA Astrophysics Data System (ADS)

    Surmeneva, M. A.; Surmenev, R. A.; Tyurin, A. I.; Pirozhkova, T. S.; Shuvarin, I. A.

    2016-09-01

    The hardness and Young's modulus of the thin hydroxyapatite-based coatings deposited by RF magnetron sputtering onto magnesium alloy, titanium, and steel substrates are studied. As the penetration depth increases, the hardness and Young's modulus of these coatings are found to tend toward the values that are characteristic of the substrates. It is shown that the difference between the values of hardness and Young's modulus at small penetration depths ( h < 80-100 nm) can be caused by the difference between the physicomechanical properties inside the coatings and that this difference at large penetration depths ( h > 100 nm) can be induced by an additional effect of the strength properties of the substrate material.

  8. Structure Evolution and Electric Properties of TaN Films Deposited on Al2O3-BASED Ceramic and Glass Substrates by Magnetron Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Zhou, Yan Ming; Ma, Yang Zhao; Xie, Zhong; He, Ming Zhi

    2014-03-01

    Structure evolution and electric properties of tantalum nitride (TaN) films deposited on Al2O3-based ceramic and glass substrates by magnetron reactive sputtering were carried out as a function of the N2-to-Ar flow ratio. The TaN thin films on Al2O3-based ceramic substrates grow with micronclusters composed of numerous nanocrystallites, contains from single-phase of Ta2N grains to TaN, and exhibits high defect density, sheet resistance and negative TCR as the N2-to-Ar flow ratio continuously increases. However, the films on the glass substrates grow in the way of sandwich close-stack, contains from single-phase of Ta2N grains to TaN and Ta3N5 phases with the increase of N2-to-Ar flow ratio. These results indicate that the N2-to-Ar flow ratio and surface characteristic difference of substrates play a dominant effect on the structure and composition of the TaN films, resulting in different electrical properties for the films on Al2O3-based ceramic and the samples on glass substrates.

  9. Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor

    NASA Astrophysics Data System (ADS)

    Baker, Troy; Mayo, Ashley; Veisi, Zeinab; Lu, Peng; Schmitt, Jason

    2014-10-01

    Aluminum nitride (AlN) was grown on c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor. The surface morphology, crystal quality, and growth rate were investigated as a function of growth temperature in the range of 1450-1575 °C. AlN templates grown to a thickness of 1 μm were optimized with double axis X-ray diffraction (XRD) rocking curve full width half maximums (FWHMs) of 135″ for the (002) and 513″ for the (102).

  10. Effect of thermal cycling on stress in metallic films on ceramic substrates

    NASA Technical Reports Server (NTRS)

    Mattison, Edward M.; Vessot, Robert F. C.

    1990-01-01

    The hydrogen maser is the most stable frequency standard currently available for averaging intervals of hours to weeks. A major contributor to maser frequency variations is the maser's microwave resonant cavity: by means of the cavity pulling effect, a change in the cavity's resonance frequency produces a proportional change in the maser's output frequency. To minimize variations in the cavity's dimensions, and thus in its resonance frequency, maser cavities are often constructed of a low-expansivity glass-ceramic material coated on its surface with a conductive metallic film. It was previously shown that silver films like those used in SAO maser cavities develop tensile stress when cooled to room temperature after being fired onto the cavity, and that the stress in such films relaxes with time at a rate proportional to the level of stress. Stress relaxation in maser cavity coatings can alter the shape, and hence the resonance frequency, of the cavity, resulting in a slow variation in the maser's output frequency. The possibility was investigated of reversing the initial tensile stress by precooling the coated cavity material. It was hypothesized that cooling the material well below its normal working temperature and then warming it to its normal temperature would result in a lower tensile stress or even a compressive stress. Under such a condition stress relaxation, and thus any consequent frequency drifts, might be reduced or reversed.

  11. AlN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices

    SciTech Connect

    Lin, Chih-Ming; Senesky, Debbie G.; Pisano, Albert P.; Lien, Wei-Cheng; Felmetsger, Valery V.; Hopcroft, Matthew A.

    2010-10-04

    Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C-SiC) layers on Si (100) substrates using alternating current reactive magnetron sputtering at temperatures between approximately 300-450 deg. C. The AlN films were characterized by x-ray diffraction, scanning electron microscope, and transmission electron microscopy. A two-port surface acoustic wave device was fabricated on the AlN/3C-SiC/Si composite structure, and an expected Rayleigh mode exhibited a high acoustic velocity of 5200 m/s. The results demonstrate the potential of utilizing AlN films on epitaxial 3C-SiC layers to create piezoelectric resonant devices.

  12. Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO

    SciTech Connect

    Kobayashi, Atsushi; Ohta, Jitsuo; Ueno, Kohei; Oshima, Masaharu; Fujioka, Hiroshi

    2013-11-04

    Determination of the polarity of insulating semipolar AlN layers was achieved via atomic scattering spectroscopy. The back scattering of neutralized He atoms on AlN surfaces revealed the atomic alignment of the topmost layers of semipolar AlN and the ZnO substrate. Pole figures of the scattering intensity were used to readily determine the polarity of these wurtzite-type semipolar materials. In addition, we found that +R-plane AlN epitaxially grows on −R-plane ZnO, indicating that the polarity flips at the semipolar AlN/ZnO interface. This polarity flipping is possibly explained by the appearance of −c and m-faces on the −R ZnO surfaces, which was also revealed by atomic scattering spectroscopy.

  13. Method for improving the toughness of silicon carbide-based ceramics

    DOEpatents

    Tein, T.Y.; Hilmas, G.E.

    1996-12-03

    Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.

  14. Method for improving the toughness of silicon carbide-based ceramics

    DOEpatents

    Tein, Tseng-Ying; Hilmas, Gregory E.

    1996-01-01

    Method of improving the toughness of SiC-based ceramics. SiC, , AlN, Al.sub.2 O.sub.3 and optionally .alpha.-Si.sub.3 N.sub.4 are hot pressed to form a material which includes AlN polytypoids within its structure.

  15. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    SciTech Connect

    Crawford, Mary Hagerott; Olson, S. M.; Banas, M.; Park, Y. -B.; Ladous, C.; Russell, Michael J.; Thaler, Gerald; Zahler, J. M.; Pinnington, T.; Koleske, Daniel David; Atwater, Harry A.

    2008-06-01

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  16. CEMS study of defect annealing in Fe implanted AlN

    NASA Astrophysics Data System (ADS)

    Bharuth-Ram, K.; Geburt, S.; Ronning, C.; Masenda, H.; Naidoo, D.

    2016-12-01

    An AlN thin film grown on sapphire substrate was implanted with 45 keV 57Fe and 56Fe ions at several energies to achieve a homogeneous concentration profile of approximately 2.6 at.%. in the AlN film. Conversion electron Mössbauer Spectroscopy data were collected after annealing the sample up to 900 °C. The spectra were fitted with three components, a single line attributed to small Fe clusters, and two quadrupole split doublets attributed to Fe substituting Al in the wurtzite AlN lattice and to Fe located in implantation induced lattice damage. The damage component shows significant decrease on annealing up to 900 °C, accompanied by corresponding increases in the singlet component and the substitutional Fe.

  17. Patterned growth and field-emission properties of AlN nanocones.

    PubMed

    Liu, Ning; Wu, Qiang; He, Chengyu; Tao, Haisheng; Wang, Xizhang; Lei, Wei; Hu, Zheng

    2009-09-01

    Patterned growth of AlN nanocones on a Ni-coated Si substrate is demonstrated through the reaction between AlCl(3) and NH(3) at 700 degrees C with Mo grid as a mask. The AlN nanocones are selectively deposited in the hollow region of the mask with diameters of approximately 10 nm at the tips and 50-60 nm at the roots. The field-emission (FE) performance is effectively enhanced by the patterned growth mainly because of the decreased screening effect, and both turn-on and threshold fields are dramatically decreased, less than half of the corresponding ones for the unpatterned product with similar sizes. The results indicate that patterned growth is an efficient and reproducible way to enhance the FE performance of AlN nanocones, which could be applied to optimize the FE properties of other nanoscale field emitters.

  18. Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

    SciTech Connect

    Kita, Takashi; Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro; Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro; Ishihara, Tsuguo; Izumi, Hirokazu

    2015-04-28

    We studied energy transfer from AlN to doped Gd{sup 3+} ions as a function of the post-thermal annealing temperature. Gd-doped AlN thin films were deposited on fused-silica substrates using a reactive radio-frequency magnetron sputtering technique. The film is a c-axis oriented polycrystal. The intra-orbital electron transition in Gd{sup 3+} showed an atomically sharp luminescence at 3.9 eV (318 nm). The photoluminescence (PL) excitation spectrum exhibited a resonant peak, indicating efficient energy transfer from the host AlN crystal to Gd{sup 3+} ions. The PL intensity increases approximately ten times by thermal annealing. The PL decay lifetime becomes long with annealing, and mid-gap luminescence relating to the crystal defects in AlN was also found to be reduced by annealing. These results suggest that energy dissipation of excited carriers in AlN was suppressed by annealing, and the efficiency of energy transfer into Gd{sup 3+} was improved.

  19. Deposition of ultrathin AlN films for high frequency electroacoustic devices

    SciTech Connect

    Felmetsger, Valery V.; Laptev, Pavel N.; Graham, Roger J.

    2011-03-15

    The authors investigate the microstructure, crystal orientation, and residual stress of reactively sputtered aluminum nitride (AlN) films having thicknesses as low as 200 down to 25 nm. A two-step deposition process by the dual cathode ac (40 kHz) powered S-gun magnetron enabling better conditions for AlN nucleation on the surface of the molybdenum (Mo) bottom electrode was developed to enhance crystallinity of ultrathin AlN films. Using the two-step process, the residual in-plane stress as well as the stress gradient through the film thickness can be effectively controlled. X-ray rocking curve measurements have shown that ultrathin films grown on Mo using this technology are highly c-axis oriented with full widths at half maximum of 1.8 deg. and 3.1 deg. for 200- and 25-nm-thick films, respectively, which are equal to or even better than the results previously reported for relatively thick AlN films. High-resolution transmission electron microscopy and fast Fourier transform analyses have confirmed strong grain orientation in 25-100-nm-thick films. A fine columnar texture and a continuous lattice microstructure within a single grain from the interface with the Mo substrate through to the AlN surface have been elicited even in the 25-nm-thick film.

  20. Influence of AlN thickness on AlGaN epilayer grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jayasakthi, M.; Juillaguet, S.; Peyre, H.; Konczewicz, L.; Baskar, K.; Contreras, S.

    2016-10-01

    AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The AlN buffer thickness was varied from 400 nm to 800 nm. The AlGaN layer thickness was 1000 nm. The crystalline quality, thickness and composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The threading dislocation density (TDD) was found to decrease with increase of AlN layer thickness. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by temperature dependent photoluminescence (PL). PL intensities of AlGaN layers increases with increasing the AlN thickness. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be decreased while increase of AlN thickness.

  1. Understanding AlN Obtaining Through Computational Thermodynamics Combined with Experimental Investigation

    NASA Astrophysics Data System (ADS)

    Florea, R. M.

    2017-06-01

    Basic material concept, technology and some results of studies on aluminum matrix composite with dispersive aluminum nitride reinforcement was shown. Studied composites were manufactured by „in situ” technique. Aluminum nitride (AlN) has attracted large interest recently, because of its high thermal conductivity, good dielectric properties, high flexural strength, thermal expansion coefficient matches that of Si and its non-toxic nature, as a suitable material for hybrid integrated circuit substrates. AlMg alloys are the best matrix for AlN obtaining. Al2O3-AlMg, AlN-Al2O3, and AlN-AlMg binary diagrams were thermodynamically modelled. The obtained Gibbs free energies of components, solution parameters and stoichiometric phases were used to build a thermodynamic database of AlN- Al2O3-AlMg system. Obtaining of AlN with Liquid-phase of AlMg as matrix has been studied and compared with the thermodynamic results. The secondary phase microstructure has a significant effect on the final thermal conductivity of the obtained AlN. Thermodynamic modelling of AlN-Al2O3-AlMg system provided an important basis for understanding the obtaining behavior and interpreting the experimental results.

  2. Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

    NASA Astrophysics Data System (ADS)

    Kita, Takashi; Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro; Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro; Ishihara, Tsuguo; Izumi, Hirokazu

    2015-04-01

    We studied energy transfer from AlN to doped Gd3+ ions as a function of the post-thermal annealing temperature. Gd-doped AlN thin films were deposited on fused-silica substrates using a reactive radio-frequency magnetron sputtering technique. The film is a c-axis oriented polycrystal. The intra-orbital electron transition in Gd3+ showed an atomically sharp luminescence at 3.9 eV (318 nm). The photoluminescence (PL) excitation spectrum exhibited a resonant peak, indicating efficient energy transfer from the host AlN crystal to Gd3+ ions. The PL intensity increases approximately ten times by thermal annealing. The PL decay lifetime becomes long with annealing, and mid-gap luminescence relating to the crystal defects in AlN was also found to be reduced by annealing. These results suggest that energy dissipation of excited carriers in AlN was suppressed by annealing, and the efficiency of energy transfer into Gd3+ was improved.

  3. Ion-beam-produced damage and its stability in AlN films

    NASA Astrophysics Data System (ADS)

    Kucheyev, S. O.; Williams, J. S.; Zou, J.; Jagadish, C.; Pophristic, M.; Guo, S.; Ferguson, I. T.; Manasreh, M. O.

    2002-10-01

    Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV 197Au+ ions at room and liquid-nitrogen temperatures (RT and LN2) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN2. An increase in irradiation temperature from LN2 to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of AlxGa1-xN with x⩽0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000 °C.

  4. Effect of AC target power on AlN film quality

    SciTech Connect

    Knisely, Katherine Grosh, Karl

    2014-09-01

    The influence of alternating current (AC) target power on film stress, roughness, and x-ray diffraction rocking curve full width half maximum (FWHM) was examined for AlN films deposited using S-gun magnetron sputtering on insulative substrates consisting of Si wafers with 575 nm thermal oxide. As the AC target power was increased from 5 to 8 kW, the deposition rate increased from 9.3 to 15.9 A/s, film stress decreased from 81 to −170 MPa, and the rocking curve FWHM increased from 0.98 to 1.03°. AlN film behavior is observed to change with target life; films deposited at 200 kWh target life were approximately 40 MPa more compressive and had 0.02° degree higher rocking curve FWHM values than films deposited at 130 kWh. AlN films deposited in two depositions were compared with films deposited in a single deposition, in order to better characterize the growth behavior and properties of AlN films deposited on an existing AlN film, which is not well understood. Two deposition films, when compared with single deposition films, showed no variation in residual stress trends or grain size behavior, but the average film roughness increased from 0.7 to 1.4 nm and rocking curve FWHM values increased by more than 0.25°.

  5. Materials design considerations involved in the fabrication of implantable bionics by metallization of ceramic substrates.

    PubMed

    Patel, Sunil; Guenther, Thomas; Dodds, Christopher W D; Kolke, Sergej; Privat, Karen L; Matteucci, Paul B; Suaning, Gregg J

    2013-01-01

    The Pt metallization of co-fired Al2O3/SiO2 substrates containing Pt feedthroughs was shown to be a suitable means to construct implantable bionics. The use of forge welding to join an electrode to such a metallized feedthrough was demonstrated and subsequently evaluated through the use of metallography and electron microscopy. Metallurgical phenomena involved in forge welding relevant to the fabrication of all types of biomedical implants are discussed within this paper. The affect of thermal profiles used in brazing or welding to build implantable devices from metal components is analysed and the case for considered selection of alloys in implant design is put forward.

  6. Method for thermally spraying crack-free mullite coatings on ceramic-based substrates

    NASA Technical Reports Server (NTRS)

    Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Heidorn, Raymond W. (Inventor)

    2000-01-01

    A process for depositing a mullite coating on a silicon-based material, such as those used to form articles exposed to high temperatures and including the hostile thermal environment of a gas turbine engine. The process is generally to thermally spray a mullite powder to form a mullite layer on a substrate, in which the thermal spraying process is performed so that the mullite powder absorbs a sufficient low level of energy from the thermal source to prevent evaporation of silica from the mullite powder. Processing includes deposition parameter adjustments or annealing to maintain or reestablish phase equilibrium in the mullite layer, so that through-thickness cracks in the mullite layer are avoided.

  7. Method for thermally spraying crack-free mullite coatings on ceramic-based substrates

    NASA Technical Reports Server (NTRS)

    Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor); Heidorn, Raymond W. (Inventor)

    2001-01-01

    A process for depositing a mullite coating on a silicon-based material, such as those used to form articles exposed to high temperatures and including the hostile thermal environment of a gas turbine engine. The process is generally to thermally spray a mullite powder to form a mullite layer on a substrate, in which the thermal spraying process is performed so that the mullite powder absorbs a sufficient low level of energy from the thermal source to prevent evaporation of silica from the mullite powder. Processing includes deposition parameter adjustments or annealing to maintain or reestablish phase equilibrium in the mullite layer, so that through-thickness cracks in the mullite layer are avoided.

  8. Tribological properties of Ag/Ti films on Al2O3 ceramic substrates

    NASA Technical Reports Server (NTRS)

    Dellacorte, Christopher; Pepper, Stephen V.; Honecy, Frank S.

    1991-01-01

    Ag solid lubricant films, with a thin Ti interlayer for enhanced adhesion, were sputter deposited on Al2O3 substrate disks to reduce friction and wear. The dual Ag/Ti films were tested at room temperature in a pin-on-disk tribometer sliding against bare, uncoated Al2O3 pins under a 4.9 N load at a sliding velocity of 1 m/s. The Ag/Ti films reduced the friction coefficient by 50 percent to about 0.41 compared to unlubricated baseline specimens. Pin wear was reduced by a factor of 140 and disk wear was reduced by a factor of 2.5 compared to the baseline. These films retain their good tribological properties including adhesion after heat treatments at 850 C and thus may be able to lubricate over a wide temperature range. This lubrication technique is applicable to space lubrication, advanced heat engines, and advanced transportation systems.

  9. Influence of substrate orientation on wetting kinetics in reactive metal/ceramic systems

    SciTech Connect

    Drevet, B.; Landry, K.; Vikner, P.; Eustathopoulos, N.

    1996-12-01

    It is expected that crystallographic factors, like the orientation of the substrate surface, which can affect reaction kinetics, can also influence wetting kinetics. The effect of substrate orientation will be studied in two systems. The first one is a Cu-Ti alloy on {alpha}-monocrystalline alumina. For this system, wettability and reactivity of Cu-Ti alloys of various compositions on Al{sub 2}O{sub 3} monocrystals of random orientation were studied in detail by Kritsalis et al. A two-step wetting process was observed: after a very rapid decrease of contact angle in less than one second, explained by the formation of an adsorption layer of Ti at the interface, a much slower decrease arises in about 10{sup 2}s, attributed to the formation of the wettable Ti monoxide at the interface. In the present study, sessile drop experiments are carried out with a specific alloy composition (Cu-10.8 at.% Ti) on three different crystallographic faces of alumina, as well as on surfaces of random orientation. The second system investigated here is pure Al on carbon. Wetting and interfacial reactions have already been studied by Landry et al. on vitreous carbon. After a first decrease of contact angle owing to deoxidation of the Al drop and Al{sub 4}C{sub 3} formation in transient conditions, a quasi-stationary regime of carbide growth at the triple line is established, leading to a linear variation of the drop base radius as a function of time. In the present work, sessile drop experiments are performed on other varieties of carbon, i.e., pyrocarbon and pseudo-monocrystalline carbon.

  10. Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

    NASA Technical Reports Server (NTRS)

    Ownby, D. P.; Barsoum, M. W.

    1980-01-01

    The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

  11. Supported growth of polycrystalline silicon sheet on low-cost ceramic, carbon, or reusable substrate. Quarterly report No. 1, September 26-December 31, 1979

    SciTech Connect

    Chapman, P.W.; Heaps, J.D.; Schuldt, S.B.; Zook, J.D.

    1980-02-01

    The overall objective of this program is to identify and develop high-throughput, supported-growth methods for producing low-cost, large-area polycrystalline silicon sheet on ceramic, carbon, or reusable substrates. The first method being investigated is the SCIM coating technique. (SCIM is an acronym for Silicon Coating by Inverted Meniscus.) With this technique, a low-cost ceramic substrate is silicon-coated in a continuous manner by passing the substrate over a molten silicon meniscus which is contained in a narrow fused-silica trough. During this reporting period, several mullite substrates were silicon-coated with this method. The best coatings were approximately 100 ..mu..m thick with large columnar grains up to 0.5 cm wide and several cm long. Structural characterization of these coatings shows that these large grains are heavily twinned with boundaries perpendicular to the surface of the layer. Minority-carrier diffusion length measurements made on photodiodes fabricated from these coatings indicate diffusion lengths of about 25 ..mu..m. The short-circuit current densities of the diodes were about 23 mA/cm/sup 2/, with open-circuit voltages of approximately 0.49 V. With the substrates positioned horizontally as they pass over the meniscus trough, instability usually occurs, causing a buildup of molten silicon immediately downstream from the trough. This solicon eventually spills over onto key parts of the coater. By tilting the substrate at angles of 10, 15, and 20/sup 0/, stability can be achieved. A theoretical study of meniscus shapes conducted during this reporting period suggests that with an appropriate trough design and the right pressure and substrate height, a SCIM-coating with horizontal substrates should also be possible.

  12. Development of Energy-Efficient Cryogenic Leads with High Temperature Superconducting Films on Ceramic Substrates

    NASA Astrophysics Data System (ADS)

    Pan, A. V.; Fedoseev, S. A.; Shcherbakova, O. V.; Golovchanskiy, I. A.; Zhou, S.; Dou, S. X.; Webber, R. J.; Mukhanov, O. A.; Yamashita, T.; Taylor, R.

    High temperature superconductor (HTS) material can be used for the implementation of high-speed low-heat conduction data links to transport digital data from 4 K superconductor integrated circuits to higher-temperature parts of computing systems. In this work, we present a conceptual design of energy efficient interface and results in fabricating such HTS leads. Initial calculations have shown that the microstrip line cable geometry for typical materials employed in production of HTS thin films can be a two-layered film for which the two layers of about 10 cm long are separated by an insulation layer with as low permittivity as possible. With this architecture in mind, the pulsed laser deposition process has been designed in a 45 cm diameter vacuum chamber to incorporate an oscillating sample holder with homogeneous substrate heating up to 900°C, while the laser plume is fixed. This design has allowed us to produce 200 nm to 500 nm thick, 7 cm to 10 cm long YBa2Cu3O7 thin films with the homogeneous critical temperature (Tc) of about 90 K. The critical current density (Jc) of the short samples obtained from the long sample is of (2 ± 1) × 1010 A/m2. Lines of 3-100 μm wide have been successfully patterned along the length of the samples in order to directly measure the Tc and Jc values over the entire length of the samples, as well as to attempt the structuring of multichannel data lead prototype.

  13. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

    NASA Astrophysics Data System (ADS)

    Fukuyama, Hiroyuki; Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa

    2016-05-01

    The N2-CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal-organic vapor phase epitaxy method. The AlN layers were annealed in N2 and/or N2-CO gas atmosphere at 1923-1973 K for 0.5-4 h. Many pits and voids were observed on the AlN surface annealed in N2 atmosphere at 1973 K for 2 h. The rough surface was, however, much improved for the AlN annealed in N2-CO gas atmosphere. The thermodynamic principle of the N2-CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al2O3-AlN-C-N2-CO system. Voids and γ-aluminum oxynitride (γ-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, γ-AlON, and sapphire are presented, and misfits among them are discussed.

  14. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Chistyakov, Roman

    2017-02-01

    Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  15. Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique.

    PubMed

    Peng, Bin; Gong, Dongdong; Zhang, Wanli; Jiang, Jianying; Shu, Lin; Zhang, Yahui

    2016-08-10

    AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y₂O₃ films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N₂/Ar flow rate and sputtering pressure on the microstructure of the AlN thin films were systematically investigated. The results show that the dependency of the full width at half maximum (FWHM) of AlN/Y₂O₃/Hastelloy on the sputtering parameters is similar to that of AlN/Si (100). The FWHM of the AlN (002) peak of the prepared AlN films decreases with increasing sputtering power. The FWHM decreases with the increase of the N₂/Ar flow rate or sputtering pressure, and increases with the further increase of the N₂/Ar flow rate or sputtering pressure. The FWHM of the AlN/Y₂O₃/Hastelloy prepared under optimized parameters is only 3.7° and its root mean square (RMS) roughness is 5.46 nm. Based on the experimental results, the growth mechanism of AlN thin films prepared by the two-step deposition process was explored. This work would assist us in understanding the AlN film's growth mechanism of the two-step deposition process, preparing highly c-axis-oriented AlN films on flexible metal tapes and developing flexible surface acoustic wave (SAW) sensors from an application perspective.

  16. Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique

    PubMed Central

    Peng, Bin; Gong, Dongdong; Zhang, Wanli; Jiang, Jianying; Shu, Lin; Zhang, Yahui

    2016-01-01

    AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y2O3 films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N2/Ar flow rate and sputtering pressure on the microstructure of the AlN thin films were systematically investigated. The results show that the dependency of the full width at half maximum (FWHM) of AlN/Y2O3/Hastelloy on the sputtering parameters is similar to that of AlN/Si (100). The FWHM of the AlN (002) peak of the prepared AlN films decreases with increasing sputtering power. The FWHM decreases with the increase of the N2/Ar flow rate or sputtering pressure, and increases with the further increase of the N2/Ar flow rate or sputtering pressure. The FWHM of the AlN/Y2O3/Hastelloy prepared under optimized parameters is only 3.7° and its root mean square (RMS) roughness is 5.46 nm. Based on the experimental results, the growth mechanism of AlN thin films prepared by the two-step deposition process was explored. This work would assist us in understanding the AlN film’s growth mechanism of the two-step deposition process, preparing highly c-axis–oriented AlN films on flexible metal tapes and developing flexible surface acoustic wave (SAW) sensors from an application perspective. PMID:28773806

  17. Characterization and Fabrication of ZnO Nanowires Grown on AlN Thin Film

    SciTech Connect

    Yousefi, Ramin; Kamaluddin, Burhanuddin; Ghoranneviss, Mahmood; Hajakbari, Fatemeh

    2009-07-07

    In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600 deg. C and 500 deg. C during the growth. The typical average diameters of the obtained nanowires on substrate at 600 deg. C and 500 deg. C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380-382 nm, and another related to deep level emission with a weak peak at 510 nm.

  18. Microstructure of GaN epitaxy on SiC using AlN buffer layers

    SciTech Connect

    Ponce, F.A.; Krusor, B.S.; Major, J.S. Jr.; Plano, W.E.; Welch, D.F.

    1995-07-17

    The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of {similar_to}10{sup 9} cm{sup {minus}2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  19. Cd ion implantation in AlN

    NASA Astrophysics Data System (ADS)

    Miranda, S. M. C.; Franco, N.; Alves, E.; Lorenz, K.

    2012-10-01

    AlN thin films were implanted with cadmium, to fluences of 1 × 1013 and 8 × 1014 at/cm2. The implanted samples were annealed at 950 °C under flowing nitrogen. Although implantation damage in AlN is known to be extremely stable the crystal could be fully recovered at low fluences. At high fluences the implantation damage was only partially removed. Implantation defects cause an expansion of the c-lattice parameter. For the high fluence sample the lattice site location of the ions was studied by Rutherford Backscattering/Channelling Spectrometry. Cd ions are found to be incorporated in substitutional Al sites in the crystal and no significant diffusion is seen upon thermal annealing. The observed high solubility limit and site stability are prerequisite for using Cd as p-type dopant in AlN.

  20. AlN grown by metalorganic molecular beam epitaxy

    SciTech Connect

    Mackenzie, J.D.; Abernathy, C.R.; Pearton, S.J.; Wilson, R.G.

    1995-08-01

    Thin film AlN has been grown on Al{sub 2}O{sub 3} and GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using amine bonded alane precursors, tertiarybutylamine, and nitrogen from a compact electron cyclotron resonance (ECR) plasma source operating at 2.45 GHz. Typical growth pressures were in the 0.5--1 {times} 10{sup {minus}4} Torr range. The growth rates, impurity backgrounds and surface morphologies were examined for both nitrogen sources and both the solid and liquid alanes. In general, growth efficiencies were good for both alane precursors, allowing for deposition of the low temperature, {approximately} 400 C, AlN buffers needed for subsequent growth of GaN and InGaAlN alloys. Low growth temperatures could not be obtained using tertiarybutylamine, presumably due to poor decomposition efficiency of the source at low temperatures. The structural quality of material grown at high temperatures from the ECR plasma was measured by atomic force microscopy (AFM) and high resolution x-ray diffraction (HRXRD), indicating a surface roughness of {approximately} 8 {angstrom} and an x-ray full width half maximum (FWHM) of 430 arcsec.

  1. The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially on (0001) or (112xAF2) GaN or AlN substrates

    NASA Astrophysics Data System (ADS)

    Jones, K. A.; Batyrev, I. G.

    2012-12-01

    When dislocations have to be nucleated in the film to accommodate the lattice mismatch with the substrate, the shear stress acting in the glide plane, projection of the edge component of the Burgers vector lying in the growth plane, shear stress required for the dislocation to glide, and ability to decompose into partial dislocation pairs with an associated stacking fault are considered. This is done for growth on the (0001) or (112¯2) substrates by calculating the angle the slip plane, h, makes with the growth plane, length of the Burgers vector, b, angle between b and the dislocation line, l, projection of b onto the normal to l lying in the growth plane, and planar density of h. The planar density is used as a measure of the shear stress required to move the dislocation, and it is computed by determining the interplanar spacing, d, and accounting for the atoms that lie in parallel planes, which are made possible by the fact that the wurtzite unit cell contains four atoms per lattice point. Only dislocations with pyramidal glide planes are considered for growth on the (0001) substrate because the plane strain generated by the lattice mismatch does not generate any shear stress in the basal or prismatic planes. Only one member of the family of planes is considerate for this growth plane because of its high symmetry. For growth on the (112¯2) plane both slip in the basal plane and the prismatic plane normal to the Burgers vector in it are examined.

  2. Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

    NASA Astrophysics Data System (ADS)

    Sohi, P.; Martin, D.; Grandjean, N.

    2017-07-01

    Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single crystals with TDDs of ˜109 cm-2 and ˜103 cm-2, respectively. Whereas at high growth temperature (900 °C) the critical thickness for plastic relaxation is only 3 monolayers (MLs) for both substrates, this value drastically increases when decreasing the growth temperature. It reaches ˜30 MLs when GaN is deposited at 750 °C on AlN single crystals. We also observed that the strain relaxation rate strongly depends on TDD. These results exemplify the lack of efficient gliding planes in III-nitrides when grown along the c-axis, which, combined with low kinetics, allows for plastic relaxation to be frozen out. Achieving pseudomorphic GaN layers on AlN is of interest for two-dimensional electron gases based on AlN/GaN/AlN heterostructures lattice-matched to AlN single crystal substrates.

  3. Method for preparing thin-walled ceramic articles of configuration

    DOEpatents

    Holcombe, C.E.; Powell, G.L.

    1975-11-01

    A method for preparing a hollow thin-walled ceramic product is described. Ceramic powder is plasma-sprayed onto a concave surface of a substrate having a coefficient of thermal expansion less than that of the ceramic. The coated substrate is heated to sinter the ceramic and then cooled to effect a separation of the ceramic product from the substrate. (auth)

  4. Interface magnetoelectric effect in the layered heterostructures with Co layers on the polished and ion-beam planarized ceramic PZT substrates

    NASA Astrophysics Data System (ADS)

    Stognij, Alexandre I.; Novitskii, Nickolaj; Poddubnaya, Natalia; Sharko, Sergei; Ketsko, Valerij; Mikhailov, Vladimir; Dyakonov, Vladimir; Szymczak, Henryk

    2015-01-01

    The low-frequency room temperature interface magnetoelectric (ME) effect was observed in the layered heterostructures comprising the ferromagnetic (FM) Co layers and ferroelectric (FE) ceramic substrates on the base of lead zirconate titanate PbZr0.45Ti0.55O3 (PZT). The Co films 1-12 μm in thickness were deposited by ion-beam sputtering/deposition technics onto the 400 μm PZT substrates. Results of X-ray, magnetic and ME experiments have shown the existence of ME effect in Co/PZT/Co and (Co/PZT/Co)3 heterostructures obtained by the above mentioned techniques being independent on ferromagnetic/ferroelectric interface roughness. The values of ME voltage coefficient in heterostructures with ion-beam planarized PZT surfaces are much higher than that in heterostructures with mechanochemically polished ceramic substrate surfaces. The heterostructures possess ME effect of the same order as those obtained by means of the mechanical bonding of FM and FE sheets with organic binders and have the typical ME hysteresis curves. The structures obtained are perspective for application as energy-independent elements in magnetic field sensors and magnetic memory.

  5. An experimental analysis of strontium titanate ceramic substrates polished by magnetorheological finishing with dynamic magnetic fields formed by rotating magnetic poles

    NASA Astrophysics Data System (ADS)

    Pan, Jisheng; Yu, Peng; Yan, Qiusheng; Li, Weihua

    2017-05-01

    Strontium titanate (SrTiO3, STO) ceramic substrate is an incipient ferroelectric material with a perovskite structure and which has a wide range of applications in the fields of microwave, millimetre wave, and optic fibre. This paper reports on a system of experiments carried out on STO substrates using a new magnetorheological (MR) finishing process where dynamic magnetic fields are formed by magnetic poles rotate. The results show that a circular ring shaped polishing belt with a stability evaluation zone appears on the surface after being polished by MR finishing with a single-point dynamic magnetic field. The dynamic magnetic fields are stronger when the revolutions of magnetic pole increase and eccentricity of pole enlarge, with the surface finish is smoother and more material is removed. The optimum machining times, machining gap, oscillation distance, eccentricity of pole, revolutions of the workpiece and magnetic pole are 60 min, 0.8 mm, 0 mm, 7 mm, and 350 r min-1 and 90 r min-1, respectively, and the best MR fluid consists of 6 wt% of diamond abrasives in W1 particle size and 18 wt% of carbonyl iron powder in W3.5 particle size. A surface roughness of Ra and a material removal rate of 8 nm and 0.154 μm min-1 can be obtained in these optimum process conditions. Finally, the polishing mechanism for dynamic magnetic fields and the mechanism for removing material from STO ceramic substrates are discussed in detail.

  6. Effect of rapid thermal annealing on Ti AlN interfaces

    NASA Astrophysics Data System (ADS)

    Wang, Youxiang; Chen, Xin

    1999-07-01

    The interface diffusion, reaction, and adherence of rapid thermal annealed Ti/ALN were investigated by RBS, AES, SIMS, XRD and a scratch test. The experimental results show that diffusion and reaction occurs at the interface of Ti/AlN when the sample is rapidly annealed. During annealing, both the O adsorbed on the surface and doped in the AlN substrate diffuse into the Ti film. At low temperature TiO 2 is produced. At higher temperature O reacts with the diffused Al in the Ti film and produces an Al 2O 3 layer in the middle of the film. N diffuses into the Ti film and produces TiN with an interface reaction. Ti oxide is produced at the interface between the film and the substrate. Scratch test results show that interface adherence is distinctly improved by rapid annealing at low temperature and decreases at higher temperature.

  7. High strain rate superplasticity of AlN particulate reinforced aluminium alloy composites

    SciTech Connect

    Imai, T. ); L'Esperance, G.; Hong, B.D. )

    1994-08-01

    Ceramic whisker or particulate reinforced aluminium alloy composites have a great potential for automobile engineering components, aerospace structures, semi-conductor packaging and so on, because of the composites ability to exhibit a high specific elastic modulus and specific tensile strength, excellent wear resistance and heat resistance, low thermal expansion and good dimensional stability. A serious problem involving practical application of ceramic whisker or particulate reinforced aluminium alloy composites is due to the low tensile ductility, fracture toughness at room temperature and, also, their hardness qualities that make it difficult to deform by conventional forming processing and machining by ordinary tools. It has been found, however, that aluminium alloy composites reinforced by SiC or Si[sub 3]N[sub 4] whiskers or particulates produce superplasticity at a high strain rate of about 0.1s[sup [minus]1]. Superplastic deformation mechanisms of the ceramic whisker or particulate reinforced aluminium alloy composites are fine grain boundary sliding, interfacial sliding at a liquid phase and dynamic recrystallization. An AlN particulate reinforced aluminium alloy composite exhibits a high elastic modulus and a high thermal conductivity, and their thermal expansion is similar to silicon in that the AlN particulate reinforced aluminum alloy composite is expected to apply to semi-conductor packaging in the aerospace structure. In addition, if the composite could produce superplasticity at high strain rates, the market of aerospace application for superplastic composites could be expanded. The purpose of this study is to make clear if an AlN particulate reinforced aluminium alloy composite can produce superplasticity at high strain rate and the superplastic characteristics.

  8. Ceramic electrolyte coating methods

    DOEpatents

    Seabaugh, Matthew M.; Swartz, Scott L.; Dawson, William J.; McCormick, Buddy E.

    2004-10-12

    Processes for preparing aqueous suspensions of a nanoscale ceramic electrolyte material such as yttrium-stabilized zirconia. The invention also includes a process for preparing an aqueous coating slurry of a nanoscale ceramic electrolyte material. The invention further includes a process for depositing an aqueous spray coating slurry including a ceramic electrolyte material on pre-sintered, partially sintered, and unsintered ceramic substrates and products made by this process.

  9. Effect of firing conditions on thick film microstructure and solder joint strength for low-temperature, co-fired ceramic substrates

    SciTech Connect

    Hernandez, C.L.; Vianco, P.T.; Rejent, J.A.

    2000-01-04

    Low-temperature, co-fired ceramics (LTCC) are the substrate material-of-choice for a growing number of multi-chip module (MCM) applications. Unlike the longer-standing hybrid microcircuit technology based upon alumina substrates, the manufacturability and reliability of thick film solder joints on LTCC substrates have not been widely studied. An investigation was undertaken to fully characterize solder joints on these substrates. A surface mount test vehicle with Daisy chain electrical connections was designed and built with Dupont{trademark} 951 tape. The Dupont{trademark} 4569 thick film ink (Au76-Pt21-Pd3 wt.%) was used to establish the surface conductor pattern. The conductor pattern was fired onto the LTCC substrate in a matrix of processing conditions that included: (1) double versus triple prints, (2) dielectric window versus no window, and (3) three firing temperatures (800 C, 875 C and 950 C). Sn63-Pb37 solder paste with an RMA flux was screen printed onto the circuit boards. The appropriate packages, which included five sizes of chip capacitors and four sizes of leadless ceramic chip carriers, were placed on the circuit boards. The test vehicles were oven reflowed under a N{sub 2} atmosphere. Nonsoldered pads were removed from the test vehicles and the porosity of their thick film layers was measured using quantitative image analysis in both the transverse and short transverse directions. A significant dependence on firing temperature was recorded for porosity. The double printed substrates without a dielectric window revealed a thick film porosity of 31.2% at 800 C, 26.2% at 875 C and 20.4% at 950 C. In contrast, the thick film porosity of the triple printed substrates with a dielectric window is 24.1% at 800 C, 23.2% at 875 C and 17.6% at 950 C. These observations were compared with the shear strength of the as-fabricated chip capacitor solder joints to determine the effect of firing conditions on solder joint integrity. The denser films from the higher

  10. Effect of Thick Film Firing Conditions on the Solderability and Structure of Au-Pt-Pd Conductor for Low-Temperature, Co-Fired Ceramic Substrates

    SciTech Connect

    Hernandez, C.L; Vianco, P.T.

    1999-03-16

    Low-temperature, co-fired ceramics (LTCC) are the substrate material-of-choice for a growing number of multi-chip module (MCM) applications. Unlike the longer-standing hybrid microcircuit technology based upon alumina substrates, the manufacturability and reliability of thick film solder joints on LTCC substrates have not been widely studied. An investigation was undertaken to fully characterize such solder joints. A surface mount test vehicle with Daisy chain electrical connections was designed and built with Dupont{trademark} 951 tape. The Dupont{trademark} 4569 thick film ink (Au76-Pt21 -Pd3 wt.%) was used to establish the surface conductor pattern. The conductor pattern was fired onto the LTCC substrate in a matrix of process conditions that included: (1) double versus triple prints, (2) dielectric frame versus no frame, and (3) three firing temperatures (800 C, 875 C and 950 C). Pads were examined from the test vehicles. The porosity of the thick film layers was measured using quantitative image analysis in both the transverse and short transverse directions. A significant dependence on firing temperature was recorded for porosity. Solder paste comprised of Sn63-Pb37 powder with an RMA flux was screen printed onto the circuit boards. The appropriate components, which included chip capacitors of sizes 0805 up to 2225 and 50 mil pitch, leadless ceramic chip carriers having sizes of 16 I/O to 68 I/O, were then placed on the circuit boards. The test vehicles were oven reflowed under a N{sub 2} atmosphere. The solderability of the thick film pads was also observed to be sensitive to the firing conditions. Solderability appeared to degrade by the added processing steps needed for the triple print and dielectric window depositions. However, the primary factor in solderability was the firing temperature. Solderability was poorer when the firing temperature was higher.

  11. A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode.

    PubMed

    Chen, Lung-Chien; Wang, Chih-Kai; Huang, Jenn-Bin; Hong, Lu-Sheng

    2009-02-25

    This work investigates a nanoporous aluminum nitride (AlN) layer prepared using an anodic aluminum oxide (AAO) process and its application as a buffer layer for a GaN-based light-emitting diode (LED) fabricated on sapphire substrate. Following this AAO process, the average pore spacing and pore diameter of the nanoporous AlN layer were in the ranges 180-200 nm and 100-150 nm, respectively. The light output power of the GaN-based LED with a nanoporous AlN layer was about 53% higher than that of a GaN-based LED without a nanoporous AlN layer at an injection current of 20 mA. At an injection current of 80 mA, the light output power was increased by about 34%.

  12. Optimal microelectromechanical systems (MEMS) device for achieving high pyroelectric response of AlN

    NASA Astrophysics Data System (ADS)

    Kebede, Bemnnet; Coutu, Ronald A.; Starman, LaVern

    2014-03-01

    This paper discusses research being conducted on aluminum nitride (AlN) as a pyroelectric material for use in detecting applications. AlN is being investigated because of its high pyroelectric coefficient, thermal stability, and high Curie temperature. In order to determine suitability of the pyroelectric properties of AlN for use as a detector, testing of several devices was conducted. These devices were fabricated using microelectromechanical systems (MEMS) fabrication processes; the devices were also designed to allow for voltage and current measurements. The deposited AlN films used were 150 nm - 300 nm in thickness. Thin-films were used to rapidly increase the temperature response after the thermal stimulus was applied to the pyroelectric material. This is important because the pyroelectric effect is directly proportional to the rate of temperature change. The design used was a face-electrode bridge that provides thermal isolation which minimizes heat loss to the substrate, thereby increasing operation frequency of the pyroelectric device. A thermal stimulus was applied to the pyroelectric material and the response was measured across the electrodes. A thermal imaging camera was used to monitor the changes in temperature. Throughout the testing process, the annealing temperatures, type of layers, and thicknesses were also varied. These changes resulted in improved MEMS designs, which were fabricated to obtain an optimal design configuration for achieving a high pyroelectric response. A pyroelectric voltage response of 38.9 mVp-p was measured without filtering, 12.45 mVp-p was measured in the infrared (IR) region using a Si filter, and 6.38 mVp-p was measured in the short wavelength IR region using a long pass filter. The results showed that AlN's pyroelectric properties can be used in detecting applications.

  13. Structural, mechanical and piezoelectric properties of polycrystalline AlN films sputtered on titanium bottom electrodes

    NASA Astrophysics Data System (ADS)

    Pătru, M.; Isac, L.; Cunha, L.; Martins, P.; Lanceros-Mendez, S.; Oncioiu, G.; Cristea, D.; Munteanu, D.

    2015-11-01

    Polycrystalline AlN coatings were deposited on Ti-electrode films by reactive magnetron sputtering. During the deposition, processing parameters such as the reactive gas pressure and time of deposition have been varied. The purpose was to obtain an optimized AlN/Ti system coating with suitable properties for applications such as piezoelectric sensors, which could monitor the wear rate and the remaining coating life of a specific part. The chemical composition, the structure, and the morphology of the multilayered films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy techniques, respectively. These measurements showed the formation of highly (1 0 1), (1 0 2) and (1 0 3) oriented AlN films with piezoelectric and mechanical properties suitable for the desired purpose. A densification of the AlN coating was also observed, caused by lower nitrogen pressures, which has led to an improvement of the crystallinity along with an increase of hardness. The coating stability at high temperatures was also examined. Consequently, an improvement of the piezoelectric properties of the AlN films was observed, inferred from the enhancement of c-axis (0 0 2) orientation after annealing. Furthermore, the mechanical characteristics (hardness and Young's modulus) were significantly improved after heat treatment. These two parameters decrease rapidly with the increase of the indentation depth, approaching constant values close to those of the substrate after annealing. Thus, thermal annealing promotes not only the rearrangement of Al-N network, but also a surface hardening of the film, caused by a nitriding process of unsaturated Al atoms.

  14. Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Nemoz, Maud; Dagher, Roy; Matta, Samuel; Michon, Adrien; Vennéguès, Philippe; Brault, Julien

    2017-03-01

    AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as confirmed by transmission electron microscopy (TEM) images, up to 75%. Moreover, it is found that annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process. In addition, the morphological properties of the films were determined by atomic force microscopy (AFM) and show that the annealing conditions have a strong impact on the surface morphology and roughness. Finally, an annealing at 1550 °C for 20 min appears as an ideal tradeoff to enhance the structural properties while preserving the initial AlN surface morphology.

  15. Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

    NASA Astrophysics Data System (ADS)

    Chen, Shuo-Wei; Yang, Young; Wen, Wei-Chih; Li, Heng; Lu, Tien-Chang

    2016-03-01

    Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

  16. Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer

    NASA Astrophysics Data System (ADS)

    Huang, Jun; Niu, Mu Tong; Zhang, Ji Cai; Wang, Wei; wang, Jian Feng; Xu, Ke

    2017-02-01

    Crystalline qualities of three AlN films grown by cold-wall high temperature hydride vapor phase epitaxy (CW-HT-HVPE) on c-plane sapphire substrates, with different AlN buffer layers (BLs) deposited either by CW-HT-HVPE or by hot-wall low temperature hydride vapor phase epitaxy (HW-LT-HVPE), have been studied. The best film quality was obtained on a 500-nm-thick AlN BL grown by HW-LT-HVPE at 1000 ℃. In this case,the AlN epilayer has the lowest full-width at half-maximum (FWHM) values of the (0002) and (10-12) x-ray rocking curve peaks of 295 and 306 arcsec, respectively, corresponding to the screw and edge threading dislocation (TD) densities of 1.9×108 cm-2 and 5.2×108 cm-2. This improvement in crystal quality of the AlN film can be attributed to the high compressive-stress of BL grown by HW-LT-HVPE,which facilitate the inclination and annihilation of TDs.

  17. Process for producing advanced ceramics

    DOEpatents

    Kwong, Kyei-Sing

    1996-01-01

    A process for the synthesis of homogeneous advanced ceramics such as SiC+AlN, SiAlON, SiC+Al.sub.2 O.sub.3, and Si.sub.3 N.sub.4 +AlN from natural clays such as kaolin, halloysite and montmorillonite by an intercalation and heat treatment method. Included are the steps of refining clays, intercalating organic compounds into the layered structure of clays, drying the intercalated mixture, firing the treated atmospheres and grinding the loosely agglomerated structure. Advanced ceramics produced by this procedure have the advantages of homogeneity, cost effectiveness, simplicity of manufacture, ease of grind and a short process time. Advanced ceramics produced by this process can be used for refractory, wear part and structure ceramics.

  18. Blue electroluminescence from AlN nanowhiskers

    NASA Astrophysics Data System (ADS)

    Vokhmintsev, A. S.; Weinstein, I. A.; Chaikin, D. V.; Fedorov, M. D.; Afonin, Yu. D.

    2015-04-01

    AlN nanowhiskers with an average diameter of 68 nm, for which a chemical analysis showed an Al: N ratio of about 1: 0.8 and a high content of oxygen and carbon impurities, have been synthesized. The electroluminescent properties of the nanostructures have been studied at room temperature in the spectral range of 4.0-1.77 eV (310-700 nm) at varied voltage (75-200 V) and frequency (0.5-10.0 kHz) of the exciting harmonic signal. It is shown that the electroluminescence recorded in the blue spectral range is constituted by bands peaked at E max ≈ 2.53 and 2.75 eV and half-widths ω ≈ 0.39 and 0.30 eV, respectively, which may be associated with electron-optical transitions involving impurity-vacancy centers in the anion and cation sublattices of AlN.

  19. AlN antiresonant layer ARROW waveguides

    NASA Astrophysics Data System (ADS)

    Pelegrini, M. V.; Carvalho, D. O.; Alayo, M. I.; Pereyra, I.

    2010-02-01

    Aluminum Nitride (AlN) is a wide band gap III-V semiconductor material often used for optical applications due to its transparency and high refractive index. We have produced and characterized AlN thin films by reactive r.f. magnetron sputtering in different Ar-N2 atmospheres in order to verify the best gaseous concentration to be utilized as anti-resonant layer in ARROW waveguides. The corresponding films were characterized by Fourier transform infrared spectroscopy (FTIR), Rutherford backscattering spectroscopy (RBS), Ellipsometry and visible optical absorption. The AlN properties did not varied significantly between the films deposited with 20 and 70 sccm of N2, most of the variations occurred for films deposited with 18 sccm of N2 or below. The film deposited with 20 sccm was selected to be used as the first ARROW layer in the fabricated waveguides. Two routines were used to design the waveguides parameters, the transfer matrix method (TMM) and the semi-vectorial non-uniform finite difference method (NU-FDM). Attenuation as low as 3.5dB/cm was obtained for a 7 μm wide waveguide.

  20. Ceramic electrolyte coating and methods

    DOEpatents

    Seabaugh, Matthew M.; Swartz, Scott L.; Dawson, William J.; McCormick, Buddy E.

    2007-08-28

    Aqueous coating slurries useful in depositing a dense coating of a ceramic electrolyte material (e.g., yttrium-stabilized zirconia) onto a porous substrate of a ceramic electrode material (e.g., lanthanum strontium manganite or nickel/zirconia) and processes for preparing an aqueous suspension of a ceramic electrolyte material and an aqueous spray coating slurry including a ceramic electrolyte material. The invention also includes processes for depositing an aqueous spray coating slurry including a ceramic electrolyte material onto pre-sintered, partially sintered, and unsintered ceramic substrates and products made by this process.

  1. An array of Eiffel-tower-shape AlN nanotips and its field emission properties

    NASA Astrophysics Data System (ADS)

    Tang, Yongbing; Cong, Hongtao; Chen, Zhigang; Cheng, Huiming

    2005-06-01

    An array of Eiffel-tower-shape AlN nanotips has been synthesized and assembled vertically with Si substrate by a chemical vapor deposition method at 700 °C. The single-crystalline AlN nanotips along [001] direction, including sharp tips with 10-100 nm in diameter and submicron-sized bases, are distributed uniformly with density of 106-107tips/cm2. Field emission (FE) measurements show that its turn on field is 4.7 V/μm, which is comparable to that of carbon nanotubes, and the fluctuation of FE current is as small as 0.74% for 4 h. It is revealed this nanostructure is available to optimize the FE properties and make the array a promising field emitter.

  2. Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

    NASA Astrophysics Data System (ADS)

    Bessolov, V.; Kalmykov, A.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Poletaev, N.; Rodin, S.

    2017-01-01

    Hydride vapor phase epitaxy (HVPE) growth of semipolar AlN and GaN layers on planar Si(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid-phase epitaxial formation of a specially oriented SiC nucleation layer followed by epitaxy of AlN layer by HVPE at low rates enables growth of aluminum and gallium nitrides in the semipolar direction. For the best GaN(20-23) layers obtained, the full width at half maximum (FWHM) value for the x-ray diffraction rocking curve is 24 arcmin. The photoluminescence spectrum of the semipolar GaN measured at 4 K exhibits bands related to basal-plane and prismatic stacking faults (BSF and PSF).

  3. Laser assisted CVD growth of AlN and GaN

    NASA Astrophysics Data System (ADS)

    Halpern, Joshua B.; Frye, Joan M.; Harris, Gary; Aluko, M.

    1990-08-01

    This is the first annual report of a project for investigating laser assisted CVD growth of AlN and GaN. In the first year, three experimental systems have been built. The first is a small, mobile CVD test system for evaluating growth schemes and detection methods for gas and heterogeneous phases. The second is a tunable diode laser spectrometer for monitoring gas phase components in a CVD reactor. The third is a dye laser system for monitoring atoms and small free radicals in the CVD system. First experiments have been done with all three systems. In particular we are investigating the use of 248 nm photolysis of trimethylaluminum near a slightly heated substrate in a mixture of TMA1 and hydrazine for growth of AlN.

  4. Biaxially Textured YBa2Cu3O7-x Films Deposited on Polycrystalline Flexible Yttria-Stablized Zirconia Ceramic Substrates

    DTIC Science & Technology

    2008-10-01

    possible and this may reduce the Jc in the self-field. The yield strength (YS) of uncoated Ceraflex substrates was compared with that of metallic...YBCO layers is possible and this may reduce the Jc in the self-field. The yield strength (YS) of uncoated Ceraflex substrates was compared with that of...These substrates also have high hard- ness and fracture toughness – three times higher in bendingll rights reserved. : +1 937 656 4095. (C.V. Varanasi

  5. Micro-machined heat pipes in silicon MCM substrates

    SciTech Connect

    Benson, D.A.; Mitchell, R.T.; Tuck, M.R.

    1997-01-01

    Multichip modules (MCMs) containing power components need a substrate with excellent heat spreading capability to both avoid hot spots and to move dissipation heat toward the system heat sinks. Polycrystalline diamond is an excellent MCM heat spreading substrate but remains several orders of magnitude too expensive and somewhat more difficult to process than conventional mother-board materials. Today`s power MCMs concentrate on moderately priced silicon wafers and aluminum nitride ceramic with their improved thermal conductivity and good thermal expansion match to power semiconductor components in comparison to traditional alumina and printed wiring board materials. However, even silicon and AlN substrates are thermally challenged by designers needs. The authors report on the integral fabrication of micro-heat pipes embedded in silicon MCM substrates (5 x 5 cm) by the use of micromachined capillary wick structures and hermetic micro-cavities. This passive microstructure results in more than a 5 times improvement in heat spreading capability of the silicon MCM substrate over a large range of power densities and operating temperatures. Thus diamond-like cooling is possible at silicon prices.

  6. Effect of pre-deposition RF plasma etching on wafer surface morphology and crystal orientation of piezoelectric AlN thin films.

    PubMed

    Felmetsger, V; Mikhov, M; Laptev, P

    2015-02-01

    In this work, we describe the design and operation of a planarized capacitively coupled RF plasma module and investigate the effects of non-reactive RF plasma etching on Si (100) wafer surface morphology and crystal orientation of Al bottom electrodes and subsequently deposited AlN films. To ensure formation of highly (111) textured Al electrode, a thin 25-nm AlN seed layer was grown before the Al deposition. The seed layer's orientation efficiency improved with increasing the RF power from 70 to 300 W and resulted in narrowing the Al (111) rocking curves. AFM and XRD data have shown that crystal orientations of both the electrode and reactively sputtered AlN film are considerably improved when the substrate micro roughness is reduced from an ordinary level of a few nanometers to atomic level corresponding to root mean square roughness as low as about 0.2 to 0.3 nm. The most perfectly crystallized film stacks of 100-nm Al and 500-nm AlN were obtained in this work using etching in Ar plasma optimized to create an atomically smooth, epi-ready Si surface morphology that enables superior AlN seed layer nucleation conditions. X-ray rocking curves around the Al (111) and AlN (0002) diffraction peaks exhibited extremely low FWHM values of 0.68° and 1.05°, respectively.

  7. Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

    NASA Astrophysics Data System (ADS)

    Bryan, Isaac; Bryan, Zachary; Mita, Seiji; Rice, Anthony; Tweedie, James; Collazo, Ramón; Sitar, Zlatko

    2016-03-01

    AlN epitaxial thin films were grown on both vicinal (0001)-oriented native single crystal AlN substrates and AlN templates grown on vicinal (0001)-oriented sapphire to develop a surface kinetic framework for the control of surface morphology. A Burton, Cabrera, and Frank (BCF) theory-based model is formulated and utilized to understand the dependence of the surface kinetics on the vapor supersaturation, σ, and substrate misorientation angle, α. The surface energy of the Al-polar surface of AlN was experimentally determined using BCF theory to be 149±8 meV/Å2. The critical misorientation angle for the onset of step-bunching was determined to be ~0.25° for a growth rate of 500 nm/h and temperature of 1250 °C. Transitioning from a surface with 2D nuclei to one with bilayer steps required a decrease in σ or an increase in α, whereas the suppression of step-bunching required an increase in σ or a decrease in α.

  8. Highly textured growth of AlN films on sapphire by magnetron sputtering for high temperature surface acoustic wave applications

    SciTech Connect

    Aubert, T.; Assouar, M. B.; Legrani, O.; Elmazria, O.; Tiusan, C.; Robert, S.

    2011-03-15

    Piezoelectric aluminum nitride films were deposited onto 3 in. [0001] sapphire substrates by reactive magnetron sputtering to explore the possibility of making highly (002)-textured AlN films to be used in surface acoustic wave (SAW) devices for high temperature applications. The synthesized films, typically 1 {mu}m thick, exhibited a columnar microstructure and a high c-axis texture. The relationship between the microstructures and process conditions was examined by x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscopy analyses. The authors found that highly (002)-textured AlN films with a full width at half maximum of the rocking curve of less than 0.3 deg. can be achieved under high nitrogen concentration and moderate growth temperature, i.e., 250 deg. C. The phi-scan XRD reveals the high in-plane texture of deposited AlN films. The SAW devices, based on the optimized AlN films on sapphire substrate, were characterized before and after an air annealing process at 800 deg. C for 90 min. The frequency response, recorded after the annealing process, confirmed that the thin films were still strong in a high temperature environment and that they had retained their piezoelectric properties.

  9. High temperature ceramic articles having corrosion resistant coating

    DOEpatents

    Stinton, David P.; Lee, Woo Y.

    1997-01-01

    A ceramic article which includes a porous body of SiC fibers, Si.sub.3 N.sub.4 fibers, SiC coated fibers or Si.sub.3 N.sub.4 coated fibers, having at least one surface, the article having a coating of AlN adherently disposed throughout at least a portion of the porous body.

  10. Multi-modality computer-aided diagnosis system for axillary lymph node (ALN) staging: segmentation of ALN on ultrasound images

    NASA Astrophysics Data System (ADS)

    Arbash Meinel, Lina; Bergtholdt, Martin; Abe, Hiroyuki; Huo, D.; Buelow, Thomas; Carlsen, Ingwer; Newstead, Gillian

    2009-02-01

    Our goal was to develop and evaluate a reliable segmentation method to delineate axillary lymph node (ALN) from surrounding tissues on US images as the first step of building a multi-modality CADx system for staging ALN. Ultrasound images of 24 ALN from 18 breast cancer patients were used. An elliptical model algorithm was used to fit ALNs boundaries using the following steps: reduce image noise, extract image edges using the Canny edge detector, select edge pixels and fit an ellipse by minimizing the quadratic error, Find the best fitting ellipse based on RANSAC. The segmentation was qualitatively evaluated by 3 expert readers using 4 aspects: Orientation of long axis (OLA): within +- 45 degrees, or off by +-45 degrees, overlap (OV): the fitted ellipse completely included ALN, partially included ALN, or missed the ALN, size (SZ): too small, good within 20% error margin, or too large, and aspect ratio (AR): correct or wrong. Nightly six % of ALNs were correctly evaluated by all readers in terms of OLA and AR, 90.2% in terms of OV and 86.11 in terms of SZ. Readers agreed that the segmentation was correct in 70% of the cases in all aspects. Due to small sample size and small variation among readers, we don't have power to show the accuracy of them is different.

  11. Influence of TMAl preflow on AlN epitaxy on sapphire

    NASA Astrophysics Data System (ADS)

    Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-05-01

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  12. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

    SciTech Connect

    Altuntas, Halit E-mail: biyikli@unam.bilkent.edu.tr; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi E-mail: biyikli@unam.bilkent.edu.tr

    2015-04-21

    Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200 °C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2–21.5 MV/m), Schottky emission (23.6–39.5 MV/m), Frenkel-Poole emission (63.8–211.8 MV/m), trap-assisted tunneling (226–280 MV/m), and Fowler-Nordheim tunneling (290–447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.

  13. Visible emission from AlN doped with Eu and Tb ions

    NASA Astrophysics Data System (ADS)

    Jadwisienczak, W. M.; Lozykowski, H. J.; Berishev, I.; Bensaoula, A.; Brown, I. G.

    2001-04-01

    We report the observation of visible cathodoluminescence (CL) from AlN thin films grown on sapphire (0001) substrate by molecular beam epitaxy and doped by implantation with Eu3+ and Tb3+ ions. The strongest rare earth (RE) CL was observed from samples annealed at 1100 °C for 0.5 h in N2 ambient. The sharp characteristic emission lines corresponding to Eu3+ and Tb3+ intra-4fn shell transitions are resolved in the spectral range from 350 to 900 nm. The CL spectra were recorded over 1-16 keV electron energy in the temperature range of 8-330 K. The depth resolved CL spectral analysis gives the luminescence surface a dead layer thickness of ˜16 nm for implanted AlN samples. We observed several different recombination centers luminescing in the 286-480 nm spectral region due to the presence of structural defects and oxygen impurities. The time resolved spectra and the CL kinetics were studied. The decay times for 5D0→7F2 (Eu3+), 5D3→7F5 (Tb3+), and 5D4→7F6 (Tb3+) transitions at 300 K are ˜0.4, ˜0.9, and ˜0.4 ms, respectively. We also discuss possible excitation mechanisms of RE ions in AlN.

  14. Ceramic coatings on smooth surfaces

    NASA Technical Reports Server (NTRS)

    Miller, R. A. (Inventor); Brindley, W. J. (Inventor); Rouge, C. J. (Inventor)

    1991-01-01

    A metallic coating is plasma sprayed onto a smooth surface of a metal alloy substitute or on a bond coating. An initial thin ceramic layer is low pressure sprayed onto the smooth surface of the substrate or bond coating. Another ceramic layer is atmospheric plasma sprayed onto the initial ceramic layer.

  15. Tribological performance of ceramic coatings deposited on metal surfaces for micro-bearing biomedical applications

    NASA Astrophysics Data System (ADS)

    Donkov, N.; Zykova, A.; Safonov, V.; Smolik, J.; Rogowska, R.; Luk'yanchenko, V.; Yakovin, S.

    2014-05-01

    Modification of metal materials by means of ceramic coating deposition is an effective way of forming alternative bearing surfaces. Ceramic AlN, Al2O3 and nanocomposite oxynitride coatings are widely used as protective coatings against wear, diffusion and corrosion. The enhancement of the mechanical properties, such as hardness parameters, effective Young's modulus, toughness, elastic recovery and wear resistance of the coatings, is very important for the tribological performance of the next generation of ceramic-coated ball bearing devices.

  16. Ti{sub 2}AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

    SciTech Connect

    Cabioch, Thierry; Alkazaz, Malaz; Beaufort, Marie-France; Nicolai, Julien; Eyidi, Dominique; Eklund, Per

    2016-08-15

    Highlights: • Epitaxial thin films of the MAX phase Ti{sub 2}AlN are obtained by thermal annealing. • A new metastable (Ti,Al,N) solid solution with the structure of α-T is evidenced. • The formation of the MAX phase occurs at low temperature (600 °C). - Abstract: Single-phase Ti{sub 2}AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AlN multilayers deposited at room temperature by magnetron sputtering onto single-crystalline (0001) 4H-SiC and (0001) Al{sub 2}O{sub 3} substrates. In-situ X-ray diffraction experiments combined with ex-situ cross-sectional transmission electron microscopy observations reveal that interdiffusion processes occur in the multilayer at a temperature of ∼400 °C leading to the formation of a (Ti, Al, N) solid solution, having the hexagonal structure of α-Ti, whereas the formation of Ti{sub 2}AlN occurs at 550–600 °C. Highly oriented (0002) Ti{sub 2}AlN thin films can be obtained after an annealing at 750 °C.

  17. Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation.

    PubMed

    Jaramillo-Fernandez, J; Ordonez-Miranda, J; Ollier, E; Volz, S

    2015-03-28

    The effect of the structural inhomogeneity and oxygen defects on the thermal conductivity of polycrystalline aluminum nitride (AlN) thin films deposited on single-crystal silicon substrates is experimentally and theoretically investigated. The influence of the evolution of crystal structure, grain size, and out-of plane disorientation along the cross plane of the films on their thermal conductivity is analyzed. The impact of oxygen-related defects on thermal conduction is studied in AlN/AlN multilayered samples. Microstructure, texture, and grain size of the films were characterized by X-ray diffraction and scanning and transmission electron microscopy. The measured thermal conductivity obtained with the 3-omega technique for a single and multiple layers of AlN is in fairly good agreement with the theoretical predictions of our model, which is developed by considering a serial assembly of grain distributions. An effective thermal conductivity of 5.92 W m(-1) K(-1) is measured for a 1107.5 nm-thick multilayer structure, which represents a reduction of 20% of the thermal conductivity of an AlN monolayer with approximately the same thickness, due to oxygen impurities at the interface of AlN layers. Our results show that the reduction of the thermal conductivity as the film thickness is scaled down, is strongly determined by the structural inhomogeneities inside the sputtered films. The origin of this non-homogeneity and the effect on phonon scattering are also discussed.

  18. Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

    NASA Astrophysics Data System (ADS)

    Davis, Robert F.; Weeks, T. W.; Bremser, M. D.; Tanaka, S.; Kern, R. S.; Sitar, Z.; Ailey, K. S.; Perry, W. G.; Wang, C.

    1997-02-01

    Thin films of AlN and GaN are deposited primarily via the common forms of organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of success. Both growth techniques have been employed by the authors to grow AlN and GaN primarily on 6H-SiC(0001). The mismatch in atomic layer stacking sequences along the growth direction produces inversion domain boundaries in the AlN at the SiC steps; this sequence problem may discourage the nucleation of GaN. Films of AlN and GaN grown by MBE at 650°C are textured; monocrystalline films are achieved at 1050°C by this technique and OMVPE. Donor and acceptor doping of GaN has been achieved via MBE without post growth annealing. Acceptor doping in CVD material requires annealing to displace the H from the Mg and eventually remove it from the material. High brightness light emitting diodes are commercially available; however, numerous concerns regarding metal and nitrogen sources, heteroepitaxial nucleation, the role of buffer layers, surface migration rates as a function of temperature, substantial defect densities and their effect on film and device properties, ohmic and rectifying contacts, wet and dry etching and suitable gate and field insulators must and are being addressed.

  19. Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

    NASA Astrophysics Data System (ADS)

    Chiu, C. H.; Lin, Y. W.; Tsai, M. T.; Lin, B. C.; Li, Z. Y.; Tu, P. M.; Huang, S. C.; Hsu, Earl; Uen, W. Y.; Lee, W. I.; Kuo, H. C.

    2015-03-01

    In this work, the ultraviolet light-emitting diodes (UV-LEDs) at 380 nm were grown on patterned sapphire substrate (PSS) by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A sputtered AlN nucleation layer was utilized on the PSS to enhance the quality of the epitaxial layer. By using high-resolution X-ray diffraction, the full-width at half-maximum of the rocking curve shows that the UV-LEDs with sputtered AlN nucleation layer had better crystalline quality when compared to conventional GaN nucleation samples. From the scanning electron microscope (SEM) and transmission electron microscopy (TEM) images, it can be observed that the tip and sidewall portion of the pattern was smooth using the sputtered AlN nucleation layer. The threading dislocation densities (TDDs) are reduced from 6×107 cm-2 to 2.5×107 cm-2 at the interface between the u-GaN layers for conventional and AlN PSS devices, respectively. As a result, a much higher light output power was achieved. The light output power at an injection current of 20 mA was enhanced by 30%. Further photoluminescence (PL) measurement and numerical simulation confirm that this increase of output power can be attributed to the improvement of material quality and light extraction.

  20. Suggested mechanism for the MAO ceramic coating on aluminium substrates using bipolar current mode in the alkaline silicate electrolytes

    NASA Astrophysics Data System (ADS)

    Al Bosta, Mohannad M. S.; Ma, Kung-Jeng

    2014-07-01

    102 samples were treated by the micro arc oxidation at different bipolar pulsing periods in the alkaline silicate electrolyte. The obtained results demonstrated that the duty cycle has no correlation with the layer growth or the surface roughness. The results were analyzed by the multiple linear regression and then the proper diagrams for thickness and roughness were plotted. The growth mechanism of the ceramic coating was influenced by many complicated and interrelated factors. We suggested a new mechanism to describe the resultant coating phenomenon taking into account the different reactions during the four periods of bipolar pulsing mode. The plasma discharge generator, anodic period, affected significantly in the layer growth and the surface roughness. The cathodic period affected the growth by the etching-protection effect, and affected the surface morphology by the production of hydrogen gaseous sheath. The contribution of the anodic neutral period was caused by the internal etching. The cathodic neutral period significantly affected the surface roughness by releasing the cathodic-hydrogen gaseous sheath, and contributed in the layer growth. The phase formation was also described by the suggested mechanism.

  1. Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

    SciTech Connect

    Ganz, P. R.; Schaadt, D. M.

    2011-12-23

    Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

  2. Termination of hollow core nanopipes in GaN by an AlN interlayer

    NASA Astrophysics Data System (ADS)

    Contreras, O.; Ruiz-Zepeda, F.; Avalos-Borja, M.; Dadgar, A.; Krost, A.

    2016-12-01

    Nanopipes associated to screw dislocations are studied by transmission electron microscopy in Si-doped GaN films grown on silicon substrates. The observations revealed that dislocations had an empty core and that an AlN interlayer is suited to block their propagation. The termination mechanism is discussed in terms of strain and kinetic growth factors, which may affect the creation and propagation of nanopipes. According to the observations, it is proposed that either step pinning or lateral overgrowth occurring at the proximity of the defect assists in capping the nanopipe.

  3. Dislocation Energetics and Pop-Ins in AlN Thin Films by Berkovich Nanoindentation

    PubMed Central

    Jian, Sheng-Rui; Tseng, Yu-Chin; Teng, I-Ju; Juang, Jenh-Yih

    2013-01-01

    Nanoindentation-induced multiple pop-ins were observed in the load-displacement curves when the mechanical responses of AlN films grown on c-plane sapphire substrates were investigated by using Berkovich indenters. No evidence of phase transformation is revealed by cross-sectional transmission electron microscopy (XTEM) and selected area diffraction (SAD) analyses. Instead XTEM observations suggest that these “instabilities” resulted from the sudden nucleation of dislocations propagating along the slip systems lying on the {0001} basal planes and the {101¯1} pyramidal planes commonly observed in hexagonal compound semiconductors. Based on this scenario, an energetic estimation of dislocation nucleation is made. PMID:28788330

  4. Nanomechanical and optical properties of highly a-axis oriented AlN films

    NASA Astrophysics Data System (ADS)

    Jose, Feby; Ramaseshan, R.; Tripura Sundari, S.; Dash, S.; Tyagi, A. K.; Kiran, M. S. R. N.; Ramamurty, U.

    2012-12-01

    This paper reports optical and nanomechanical properties of predominantly a-axis oriented AlN thin films. These films were deposited by reactive DC magnetron sputtering technique at an optimal target to substrate distance of 180 mm. X-ray rocking curve (FWHM = 52 arcsec) studies confirmed the preferred orientation. Spectroscopic ellipsometry revealed a refractive index of 1.93 at a wavelength of 546 nm. The hardness and elastic modulus of these films were 17 and 190 GPa, respectively, which are much higher than those reported earlier can be useful for piezoelectric films in bulk acoustic wave resonators.

  5. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    PubMed Central

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-01-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

  6. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  7. Strain isolated ceramic coatings

    NASA Technical Reports Server (NTRS)

    Tolokan, R. P.; Brady, J. B.; Jarrabet, G. P.

    1985-01-01

    Plasma sprayed ceramic coatings are used in gas turbine engines to improve component temperature capability and cooling air efficiency. A compliant metal fiber strain isolator between a plasma sprayed ceramic coating and a metal substrate improves ceramic durability while allowing thicker coatings for better insulation. Development of strain isolated coatings has concentrated on design and fabrication of coatings and coating evaluation via thermal shock testing. In thermal shock testing, five types of failure are possible: buckling failure im compression on heat up, bimetal type failure, isothermal expansion mismatch failure, mudflat cracking during cool down, and long term fatigue. A primary failure mode for thermally cycled coatings is designated bimetal type failure. Bimetal failure is tensile failure in the ceramic near the ceramic-metal interface. One of the significant benefits of the strain isolator is an insulating layer protecting the metal substrate from heat deformation and thereby preventing bimetal type failure.

  8. Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy

    NASA Astrophysics Data System (ADS)

    Leathersich, Jeffrey M.; Tungare, Mihir; Weng, Xiaojun; Suvarna, Puneet; Agnihotri, Pratik; Evans, Morgan; Redwing, Joan; Shahedipour-Sandvik, F.

    2013-05-01

    A systematic study was conducted to further understand the physical origin of stress modification in AlN overgrown on Si(111) upon ion implantation and annealing. Implantation parameters including ion size, energy, dosage, and current density were varied, and their effects on the amorphization process in Si(111) substrates were examined. The creation of a thick (>120 nm) amorphous Si (a-Si) layer was previously shown to result in isolation of an epitaxial AlN film grown on a Si(111) substrate through implantation-induced amorphization of the substrate, and this mechanical isolation resulted in stress dilution in the AlN layer. Results show that implanting at current density of 2 mA/cm2 allows for only a thin amorphous layer to be created because of the effects of dynamic annealing, which simultaneously eliminates any damage created from the ion implantation, regardless of ion species, dosage, and energy. Lowering the current density to 0.2 mA/cm2 does create a thick a-Si layer; however, the amorphization disappears during a high-temperature (HT) anneal. Lowering the current further to 0.2 μA/cm2 creates a thick a-Si layer that can be maintained through a HT anneal, with this difference arising from the interfacial quality of the a-Si and crystalline Si (c-Si) boundary.

  9. Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

    SciTech Connect

    Benaissa, M.; Vennegues, P.; Tottereau, O.; Nguyen, L.; Semond, F.

    2006-12-04

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots.

  10. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    SciTech Connect

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-02-23

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  11. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    NASA Astrophysics Data System (ADS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-02-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50-200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10-50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  12. Significantly enhanced mechanical properties in AlN helix

    NASA Astrophysics Data System (ADS)

    Zhang, Xinghong; Zhao, Chaoliang; Yao, Tai; Zhou, Shanbao; Han, Jiecai; Li, Jiajie; Gao, Tangling; Wang, Xianjie; Zheng, Kun; Song, Bo

    2017-07-01

    To safely and reliably use aluminum nitride (AlN) helices in the fabrication of novel micro/nanodevices, it is very important to know their mechanical properties. Herein, we investigate the mechanical properties of individual AlN helices using an in situ tensile-bending test. Tensile tests reveal that an AlN helix has an average ε of ∼4.7 ± 0.8% elastic deformation before a typical brittle fracture occurs. The bending test shows a two-step mechanical feature—linear-elastic followed by an elastic-plastic process—with an average ε bent of ∼54.5 ± 0.6%. Our results provide direct cognition about the mechanical properties of AlN helices and their benefit to the design of AlN-based flexible micro/nanodevices.

  13. Characterization of a selective AlN wet etchant

    NASA Astrophysics Data System (ADS)

    Greenlee, Jordan D.; Anderson, Travis J.; Feigelson, Boris N.; Koehler, Andrew D.; Hobart, Karl D.; Kub, Francis J.

    2015-03-01

    The effects of a selective AlN wet etchant, AZ400K, on the morphology and chemical composition of capped and uncapped GaN surfaces were investigated. After etching an uncapped GaN thin film at 80 °C for 8 h, the surface morphology was unchanged. After an annealing pulse of 1500 °C was applied, AlN-encapsulated GaN surfaces exhibited morphology change due to surface rearrangement. No reaction occurred between the GaN and AlN, preventing the complete removal of AlN. AZ400K was found to completely etch AlN without damaging the underlying GaN film, thus enabling plasma-free processing of power and optoelectronic devices.

  14. Kerr effect enhancement and corrosion resistance improvement by AlN and AlSiN films (abstract)

    NASA Astrophysics Data System (ADS)

    Lee, Z. Y.; Miao, X. S.; Liu, X. J.; Lin, G. Q.; Wan, D. F.; Hu, Y. S.

    1990-05-01

    RE-TM amorphous thin films with perpendicular magnetic anisotropy are promising for use in erasable optical recording media. In order to improve the drawback of easy oxidation and lower C/N of RE-TM films, some protective layers such as SiO, SiO2, ZnS, AlN, and Si3N4 films were studied.1,2 We have studied the Kerr effect enhancement and corrosion resistance improvement by AlN and AlSiN films. AlN and AlSiN films were prepared on glass, PC, and PMMA substrates by a rf magnetron sputtering system with three targets using low sputtering power. The films have a high refractive index (2-2.15), high optical transparency (over 90%), and high stability. The relation between optical properties and rf reactive sputtering conditions (Ar: N2 ratio, total pressure, sputtering power, sputtering time), composition, spectral transmittance, and uniformity of sputtering AlN and AlSiN films were studied. The Kerr rotation angle was up to 1.5° in AlN/TbFeCo/glass and AlSiN/TbFeCo/glass multilayer structures (laser is incident from air). We also studied AlN/TbFeCo/AlN/glass, AlN/TbFeCo/AlN/Al/glass, AlSiN/TbFeCo/AlSiN/glass and multilayer structure films. The results show that AlN and AlSiN films provide sufficient Kerr effect enhancement and superior corrosion resistance improvement to the RE-TM films. The microstructure of those films were also studied by JEM, XRD, and XPS.

  15. Mechanism for persistent hexagonal island formation in AlN buffer layer during growth on Si (111) by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Hsu, K.-Y.; Chung, H.-C.; Liu, C.-P.; Tu, L.-W.

    2007-05-21

    The characteristics of structure and morphology of AlN grown by a growth interruption method on Si (111) with plasma-assisted molecular beam epitaxy are investigated. It is found that the growth interruption method would improve the surface flatness of the AlN layer without the formation of Al droplets. However, AlN hexagonal islands were present and persistent throughout the entire growth owing to effective strain relaxation and Eherlich-Schowebel barrier effect of preexistent surface islands grown on higher terraces of the Si substrate. The density of threading dislocations underneath the hexagonal islands is much less than elsewhere in the film, which is presumably due to dislocation annihilation during the island growth process.

  16. Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

    NASA Astrophysics Data System (ADS)

    Sarzyński, Marcin; Kryśko, Marcin; Targowski, Grzegorz; Czernecki, Robert; Sarzyńska, Agnieszka; Libura, Adam; Krupczyński, Wiktor; Perlin, Piotr; Leszczyński, Michał

    2006-03-01

    The inherent problem in III-nitride technology is the cracking of AlGaN layers that results from lattice mismatch between AlGaN and GaN. In case of thin substrates (30-90μm), such as, bulk GaN grown by the high-pressure/high-temperature method, the bowing of AlGaN /GaN strained structures becomes an additional problem. To eliminate cracking and bowing, AlGaN layers were grown on GaN substrates with an AlN mask patterned to form 3-15μm wide windows. In the 3μm window, the AlGaN layer was not cracked, although its thickness and Al composition exceeded critical values for growth on nonpatterned substrates. Dislocation density in the windows was of 5×106/cm2.

  17. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

    PubMed Central

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-01

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

  18. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

    NASA Astrophysics Data System (ADS)

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-01

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  19. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ˜5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  20. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan

    2016-12-01

    In this work, we aimed to investigate the effects of two different plasma sources on the electrical properties of low-temperature plasma-assisted atomic layer deposited (PA-ALD) AlN thin films. To compare the electrical properties, 50 nm thick AlN films were grown on p-type Si substrates at 200 °C by using an inductively coupled RF-plasma (ICP) and a stainless steel hollow cathode plasma-assisted (HCPA) ALD systems. Al/AlN/p-Si metal-insulator-semiconductor (MIS) capacitor devices were fabricated and capacitance versus voltage (C-V) and current-voltage (I-V) measurements performed to assess the basic important electrical parameters such as dielectric constant, effective charge density, flat-band voltage, breakdown field, and threshold voltage. In addition, structural properties of the films were presented and compared. The results show that although HCPA-ALD deposited AlN thin films has structurally better and has a lower effective charge density (N eff ) value than ICP-ALD deposited AlN films, those films have large leakage current, low dielectric constant, and low breakdown field. This situation was attributed to the involvement of Si atoms into the AlN layers during the HCPA-ALD processing leads to additional current path at AlN/Si interface and might impair the electrical properties.

  1. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

    PubMed

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-03

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  2. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan

    2017-03-01

    In this work, we aimed to investigate the effects of two different plasma sources on the electrical properties of low-temperature plasma-assisted atomic layer deposited (PA-ALD) AlN thin films. To compare the electrical properties, 50 nm thick AlN films were grown on p-type Si substrates at 200 °C by using an inductively coupled RF-plasma (ICP) and a stainless steel hollow cathode plasma-assisted (HCPA) ALD systems. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor devices were fabricated and capacitance versus voltage ( C- V) and current-voltage ( I- V) measurements performed to assess the basic important electrical parameters such as dielectric constant, effective charge density, flat-band voltage, breakdown field, and threshold voltage. In addition, structural properties of the films were presented and compared. The results show that although HCPA-ALD deposited AlN thin films has structurally better and has a lower effective charge density ( N eff ) value than ICP-ALD deposited AlN films, those films have large leakage current, low dielectric constant, and low breakdown field. This situation was attributed to the involvement of Si atoms into the AlN layers during the HCPA-ALD processing leads to additional current path at AlN/Si interface and might impair the electrical properties.

  3. [Weibull statistical analysis of bending strength data measured either in air or in distilled water for sintered hydroxyapatite ceramics coated on the metal substrate].

    PubMed

    Wakamatsu, N; Goto, T; Adachi, M; Imura, S; Hayashi, K; Kamemizu, H; Iijima, M; Gyotoku, T; Shibata, S; Horiguchi, T

    1990-03-01

    To assess the effects of H2O on the fracture stress of sintered hydroxyapatite (HAP) ceramics prepared by procedures similar to those used for HAP coated on the metal substrate, four-point bending tests were carried out at 0.5 mm/min either in air (20 C, R.H. 73%) or in distilled water (37 degrees C). Then, strength data obtained were analyzed using two-parameter weibull statistics. In each condition, the bending strength data gave a good fit to single-mode weibull distribution. Weibull analysis of the data gave weibull parameter m = 7.8, sigma 0 = 26.2 MPa in air and m = 8.1, sigma 0 = 18.5 MPa in distilled water, which were calculated assuming a surface flaw model. The mean value of bending strength was 27.3 MPa in air and 18.2 MPa in distilled water. These results indicated that a corrosive environment such as H2O affects fracture stress when measured at a constant stress rate. This effect is considered to be caused by slow crack growth of cracks, occurring at a loading level lower than those at which specimens will fail. Using the weibull distribution function estimated in this study, the effects of both dimension of specimen and stress distribution in the specimen on the mean fracture stress have been predicted.

  4. Multiwalled carbon nanotubes-ceramic electrode modified with substrate-selective imprinted polymer for ultra-trace detection of bovine serum albumin.

    PubMed

    Prasad, Bhim Bali; Prasad, Amrita; Tiwari, Mahavir Prasad

    2013-01-15

    This study describes the synthesis of a new class of substrate-selective molecularly imprinted polymer. This involved tetraethylene glycol 3-morpholin propionate acrylate (functional monomer) and bovine serum albumin (template) for polymerization in aqueous condition, using "surface grafting-from" approach directly on a vinyl exposed multiwalled carbon nanotubes-ceramic electrode. The analyte recapture at pH 6.8 in aqueous environment simultaneously involved hydrophobically driven hydrogen bonds and ionic interactions between negatively charged bovine serum albumin and positively charged imprinted nanofilm. The selectively encapsulated bovine serum albumin first gets reduced at -0.9V and then oxidized within the cavity, without getting stripped off, to respond a differential pulse voltammetry signal. The limit of detection [0.42ng mL(-1) (3σ, RSD≤1.02%)] obtained was free from any cross-reactivity and matrix complications in aqueous, pharmaceutical, serum, and liquid milk samples. The proposed sensor can be used as a practical sensor for ultra-trace analysis of bovine serum albumin in clinical settings. Copyright © 2012 Elsevier B.V. All rights reserved.

  5. Surface nitridation induced AlN nano-columnar growth on c-sapphire

    NASA Astrophysics Data System (ADS)

    Shetty, Satish; Ghatak, Jay; Shivaprasad, S. M.

    2014-02-01

    We probe the parametric dependence of the nitridation mechanism of Al2O3 surface by radio frequency nitrogen plasma in a molecular beam epitaxy system. Our quantitative analysis by XPS and RHEED shows that the chemical composition varies with exposure time and is independent of nitrogen plasma fluence and substrate temperature. Here we show that nitrogen incorporation into the host material is diffusion limited process and involves the conversion of Al2O3 into AlN, which has a higher rate initially and then saturates at 6 h of nitrogen plasma exposure. We deposit a thin AlN layer on this saturated nitrided sapphire substrate, which was found to consist of nanorods with a bimodal diameter distribution and apex morphology. By RHEED, XRD and TEM studies we attribute that the faceted nanocolumns are formed at misfit-induced dislocations with the dislocations propagating axially in the nanorods, while the oval apexed features are diffusion mediated. We find that nanorods of both the morphologies are c-oriented, single crystalline and strain relaxed, but possess different in-plane orientation.

  6. Growth and Characterization of Polyimide-Supported AlN Films for Flexible Surface Acoustic Wave Devices

    NASA Astrophysics Data System (ADS)

    Li, Qi; Liu, Hongyan; Li, Gen; Zeng, Fei; Pan, Feng; Luo, Jingting; Qian, Lirong

    2016-06-01

    Highly c-axis oriented aluminum nitride (AlN) films, which can be used in flexible surface acoustic wave (SAW) devices, were successfully deposited on polyimide (PI) substrates by direct current reactive magnetron sputtering without heating. The sputtering power, film thickness, and deposition pressure were optimized. The characterization studies show that at the optimized conditions, the deposited AlN films are composed of columnar grains, which penetrate through the entire film thickness (~2 μm) and exhibit an excellent (0002) texture with a full width at half maximum value of the rocking curve equal to 2.96°. The film surface is smooth with a root mean square value of roughness of 3.79 nm. SAW prototype devices with a center frequency of about 520 MHz and a phase velocity of Rayleigh wave of about 4160 m/s were successfully fabricated using the AlN/PI composite structure. The obtained results demonstrate that the highly c-axis oriented AlN films with a smooth surface and low stress can be produced on relatively rough, flexible substrates, and this composite structure can be possibly used in flexible SAW devices.

  7. Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

    PubMed

    Laksana, Chipta; Chen, Meei-Ru; Liang, Yen; Tzou, An-Jyeg; Kao, Hui-Ling; Jeng, Erik; Chen, Jyh; Chen, Hou-Guang; Jian, Sheng-Rui

    2011-08-01

    High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.

  8. Microstructure and dielectric properties of (Ba 0.6Sr 0.4)TiO 3 thin films grown on super smooth glazed-Al 2O 3 ceramics substrate

    NASA Astrophysics Data System (ADS)

    Chen, Hongwei; Yang, Chuanren; Zheng, Shanxue; Zhang, Jihua; Zhang, Qiaozhen; Lei, Guanhuan; Lou, Feizhi; Yang, Lijun

    2011-12-01

    Modified substrates with nanometer scale smooth surface were obtained via coating a layer of CaO-Al2O3-SiO2 (CaAlSi) high temperature glaze with proper additives on the rough-95% Al2O3 ceramics substrates. (Ba0.6Sr0.4)TiO3 (BST) thin films were deposited on modified Al2O3 substrates by radio-frequency magnetron sputtering. The microstructure, dielectric, and insulating properties of BST thin films grown on glazed-Al2O3 substrates were investigated by X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric properties measurement. These results showed that microstructure and dielectric properties of BST thin films grown on glazed-Al2O3 substrates were almost consistent with that of BST thin films grown on LaAlO3 (1 0 0) single-crystal substrates. Thus, the expensive single-crystal substrates may be substituted by extremely cheap glazed-Al2O3 substrates.

  9. The mechanical and tribological properties of UHMWPE loaded ALN after mechanical activation for joint replacements.

    PubMed

    Gong, Kemeng; Qu, Shuxin; Liu, Yumei; Wang, Jing; Zhang, Yongchao; Jiang, Chongxi; Shen, Ru

    2016-08-01

    Ultra-high molecular weight polyethylene (UHMWPE) loaded with alendronate sodium (ALN) has tremendous potential as an orthopeadic biomaterial for joint replacements. However, poor mechanical and tribological properties of UHMWPE-ALN are still obstacle for further application. The purpose of this study was to investigate the effect and mechanism of mechanical activation on mechanical and tribological properties of 1wt% ALN-loaded UHMWPE (UHMWPE-ALN-ma). In this study, tensile test, small punch test and reciprocating sliding wear test were applied to characterize the mechanical and tribological properties of UHMWPE-ALN-ma. Scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) were employed to characterize UHMWPE-ALN-ma. Tensile test and small punch test showed that Young׳s modulus, tensile strength and work-to-failure (WTF) of UHMWPE-ALN-ma increased significantly compared to those of UHMWPE-ALN. The friction coefficients and wear factors of UHMWPE-ALN-ma both decreased significantly compared to those of UHMWPE-ALN. Mechanical activation obviously reduced type 1 (void) and type 2 (the disconnected and dislocated machining marks) fusion defects of UHMWPE-ALN-ma, which were revealed by SEM images of freeze fracture surfaces after etching and lateral surfaces of specimens after extension to fracture, respectively. It was attributed to peeled-off layers and chain scission of molecular chains of UHMWPE particles after mechanical activation, which were revealed by SEM images and FTIR spectra of UHMWPE-ALN-ma and UHMWPE-ALN, respectively. Moreover, EDS spectra revealed the more homogeneous distribution of ALN in UHMWPE-ALN-ma compared to that of UHMWPE-ALN. The present results showed that mechanical activation was a potential strategy to improve mechanical and tribological properties of UHMWPE-ALN-ma as an orthopeadic biomaterial for joint replacements. Copyright © 2016 Elsevier Ltd. All rights reserved.

  10. Preliminary study on the effect of wear process on drug release of ALN-loaded UHMWPE

    NASA Astrophysics Data System (ADS)

    Yang, Dan; Qu, Shuxin; Lin, Sunzhong; Huang, Jie; Fu, Rong; Zhou, Zhongrong

    2012-12-01

    Ultra-high molecular weight polyethylene (UHMWPE) loaded with alendronate sodium (ALN) for anti-osteolysis was developed in our previous study. As a potential material of artificial joints, ALN-loaded UHMWPE is subjected to friction and wear which probably affect the ALN release in vivo. This study aims to explore the influence of friction and wear on the ALN release rate. For comparison, the specimens of control group, immersed motionlessly in distilled water, were not applied any friction. The morphological change of worn surface of ALN-loaded UHMWPE was observed through an independent wear test and was compared with that of control UHMWPE. The ALN release rate in the friction and wear process was higher than that of non-friction test. The cumulative mass of ALN increased slowly at the onset of wear process and then speeded up. The fibrils-like wear debris accumulated on the worn surface of ALN-loaded UHMWPE but did not appear on that of UHMWPE. The micro-pores formed during wear process, were probably favorable of the dissolution of ALN. It indicated that the ALN release of ALN-loaded UHMWPE was affected by the friction and wear. The frictional factors should be taken into account in predicting the ALN release rate of ALN-loaded UHMWPE.

  11. Shock compression profiles in ceramics

    SciTech Connect

    Grady, D.E.; Moody, R.L.

    1996-03-01

    An investigation of the shock compression properties of high-strength ceramics has been performed using controlled planar impact techniques. In a typical experimental configuration, a ceramic target disc is held stationary, and it is struck by plates of either a similar ceramic or by plates of a well-characterized metal. All tests were performed using either a single-stage propellant gun or a two-stage light-gas gun. Particle velocity histories were measured with laser velocity interferometry (VISAR) at the interface between the back of the target ceramic and a calibrated VISAR window material. Peak impact stresses achieved in these experiments range from about 3 to 70 GPa. Ceramics tested under shock impact loading include: Al{sub 2}O{sub 3}, AlN, B{sub 4}C, SiC, Si{sub 3}N{sub 4}, TiB{sub 2}, WC and ZrO{sub 2}. This report compiles the VISAR wave profiles and experimental impact parameters within a database-useful for response model development, computational model validation studies, and independent assessment of the physics of dynamic deformation on high-strength, brittle solids.

  12. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  13. Effect of pyrolysis atmospheres on the morphology of polymer-derived silicon oxynitrocarbide ceramic films coated aluminum nitride surface and the thermal conductivity of silicone rubber composites

    NASA Astrophysics Data System (ADS)

    Chiu, Hsien T.; Sukachonmakul, Tanapon; Wang, Chen H.; Wattanakul, Karnthidaporn; Kuo, Ming T.; Wang, Yu H.

    2014-02-01

    Amorphous silicon oxycarbide (SiOC) and silicon oxynitrocarbide (SiONC) ceramic films coated aluminum nitride (AlN) were prepared by using preceramic-polysilazane (PSZ) with dip-coating method, followed by pyrolysis at 700 °C in different (air, Ar, N2 and NH3) atmospheres to converted PSZ into SiOCair and SiONC(Ar,N2andNH3) ceramic. The existence of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface was characterized by FTIR, XRD and XPS. The interfacial adhesion between silicone rubber and AlN was significantly improved after the introduction of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. It can be observed from AFM that the pyrolysis of PSZ at different atmosphere strongly affected to films morphology on AlN surface as SiOCair and SiONCNH3 ceramic films were more flat and smooth than SiONCN2 and SiONCAr ceramic films. Besides, the enhancement of the thermal conductivity of silicone rubber composites was found to be related to the decrease in the surface roughness of SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. This present work provided an alternative surface modification of thermally conductive fillers to improve the thermal conductivity of silicon rubber composites by coating with amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films.

  14. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  15. Charging behavior of Al2O3 and AlN under positive and negative charge injection using a kV electron beam

    NASA Astrophysics Data System (ADS)

    Belhaj, M.; Paulmier, T.; Hanna, R.; Arnaout, M.; Balcon, N.; Payan, D.; Puech, J.

    2014-02-01

    Under electron irradiation, insulating materials may charge either negatively or positively depending on their electron emission properties and characteristics of the incident electrons. The electrical behavior of these materials is linked to the sign of the injected charge. The aim here is to describe an electron beam based method that can be used to study the electrical behaviors of insulators under either positive or negative charge injection. The method was tested on ceramics samples, Al2O3 and AlN. It was shown that the electrical behaviors of both materials under e-irradiation are very different according the sign of the injected charge. Negative charging results to stable space charge for Al2O3 and on the contrary it leads to a fast charge-decay for AlN. Remarkably, reversed trends are observed for positive charge injection. The practical consequences of these results are then discussed.

  16. Portfolio: Ceramics.

    ERIC Educational Resources Information Center

    Hardy, Jane; And Others

    1982-01-01

    Describes eight art activities using ceramics. Elementary students created ceramic tiles to depict ancient Egyptian and medieval European art, made ceramic cookie stamps, traced bisque plates on sketch paper, constructed clay room-tableaus, and designed clay relief masks. Secondary students pit-fired ceramic pots and designed ceramic Victorian…

  17. Portfolio: Ceramics.

    ERIC Educational Resources Information Center

    Hardy, Jane; And Others

    1982-01-01

    Describes eight art activities using ceramics. Elementary students created ceramic tiles to depict ancient Egyptian and medieval European art, made ceramic cookie stamps, traced bisque plates on sketch paper, constructed clay room-tableaus, and designed clay relief masks. Secondary students pit-fired ceramic pots and designed ceramic Victorian…

  18. Growth dynamics of reactive-sputtering-deposited AlN films

    SciTech Connect

    Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

    2005-06-15

    We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent {beta}=0.37{+-}0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent {alpha}=1.2{+-}0.2 and {beta}=0.37{+-}0.03 and coarsening exponent 1/z=0.32{+-}0.05; (ii) local exponents: {alpha}{sub loc}=1, {beta}{sub loc}=0.32{+-}0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively.

  19. Influence of thickness on strain state and surface morphology of AlN grown by HVPE

    NASA Astrophysics Data System (ADS)

    Maosong, Sun; Jicai, Zhang; Jun, Huang; Xuewei, Li; Linjun, Wang; Xuehua, Liu; Jianfeng, Wang; Ke, Xu

    2016-12-01

    AlN thick films were grown on c-plane sapphire substrates by hydride vapor phase epitaxy at high temperature. The evolution of the strain state and crystal quality of AlN with increase of thickness were investigated by transmission electron microscopy, field-emission scanning electron microscopy, Raman spectra and atomic force microscopy (AFM). As the thickness increased, the stress in the epilayers decreased gradually, which was attributed to the reaction of dislocations at the first several microns in thickness. When the thickness was more than 20 μm, the stress was almost fully relaxed due to the formation of cracks. Wet etching experiments indicated that the dislocation density decreased with the increase of thickness. The AFM images showed that the density of dark spots on the surface obviously decreased and the atomic steps became straight as the thickness increased. Project supported by the National Basic Research Program of China (No. 2012CB619305), the National Natural Science Foundation of China (Nos. 61274127, 61474133, 61325022), and the CAS Project of Introduction of Outstanding Technical Talent.

  20. Inversion domains in AlN grown on (0001) sapphire

    SciTech Connect

    Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S.; Weyburne, D.W.

    2003-08-25

    Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

  1. Effects of hydrogen etching on stress control in AlN interlayer inserted GaN MOVPE on Si

    NASA Astrophysics Data System (ADS)

    Liu, Cai; Kumamoto, Akihito; Suzuki, Michihiro; Wang, Hongbo; Sodabanlu, Hassanet; Sugiyama, Masakazu; Nakano, Yoshiaki

    2017-07-01

    Clarification and control of the hydrogen etching of GaN is essential to achieving high-quality GaN-on-Si virtual substrates and devices based on it produced by metalorganic vapor phase epitaxy. This phenomenon and its effects on GaN-on-Si stress control were studied in this work. Without deliberate protection, voids with lateral sizes on the micrometre level underneath AlN interlayers emerged in GaN. Such voids made stress balancing in GaN-on-Si systems by inserting AlN interlayers less efficient. By flowing a protective large flow rate of ammonia, voids were eliminated while GaN decomposition still happened, which led to AlGaN alloy in the interlayers. Interfaces of Ga incorporated AlN interlayers grown under large-scale varied conditions were characterised by scanning transmission electron microscopy and energy dispersive spectrometry. Higher growth temperatures caused more Ga in the interlayers and weakened their capacity to induce compressive stress in the overlying GaN.

  2. Perpendicular magnetic anisotropy of CoPt AlN composite film with nano-fiber structure

    NASA Astrophysics Data System (ADS)

    Chen, C. C.; Toyoshima, H.; Hashimoto, M.; Shi, J.; Nakamura, Y.

    2005-06-01

    Co Pt AlN films were prepared by sputtering a Co Pt Al composite target in Ar+N2 atmosphere. Upon thermal annealing at elevated temperatures, fcc CoPt and a-AlN are formed in the films as phases separated from one other. Both phases develop as fiber-like columnar grains vertical to the substrate and with their lateral size less than 10 nm. Because of the shape anisotropy of the magnetic fiber grains the CoPt AlN film shows a perpendicular magnetic anisotropy at a thickness equal to or larger than about 25 nm while the Co TiN [6] and CoPt TiO2 [11] films do not unless their thicknesses reach 50 and 100 nm, respectively. This suggests that both the shape anisotropy of the CoPt magnetic fiber grains and their mutual separation in an a-AlN medium work more effectively in the formation with the perpendicular magnetic anisotropy. Such a perpendicular magnetic anisotropy of the CoPt AlN film associated with the nano-scale feature makes it a very promising candidate for future recording media with ultra-high area density.

  3. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Zhao, Z. J.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Liu, J. P.; Zhang, L. Q.; Zhang, Y. T.; Du, G. T.

    2016-09-01

    Photoelectron spectroscopy has been employed to analyze the content and chemical states of the elements on the surface of AlN films with different thickness, which are synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates under low pressure. It is found that, besides the carbon and gallium on the AlN surface, the atom percentage of surface oxygen increases from 4.9 to 8.4, and the electron affinity also increases from 0.36 to 0.97 eV, when the thickness of AlN films increase from 50 to 400 nm. Furthermore, accompanying with the high-resolution XPS spectra of the O 1s, it is speculated that surface oxygen may be the major influence on the electron affinity, where the surface oxygen changes the surface chemical states through replacing N to form Al-O bond and Ga-O bond, although there are also a few of Ga and C contaminations in the chemical sate of Ga-O and C-C, respectively.

  4. Investigations of AlN thin film crystalline properties in a wide temperature range by in situ X-ray diffraction measurements: Correlation with AlN/sapphire-based SAW structure performance.

    PubMed

    Aït Aïssa, Keltouma; Elmazria, Omar; Boulet, Pascal; Aubert, Thierry; Legrani, Ouadra; Mangin, Denis

    2015-07-01

    Aluminum nitride on sapphire is a promising substrate for SAW sensors operating at high temperatures and high frequencies. To get a measure of the suitability and temperature stability of such devices, an experimental relationship between the SAW performance and the structural properties of the AlN thin films was investigated in the temperature range between the ambient temperature and 1000°C. The crystalline structure of the AlN films was examined in situ versus temperature by X-ray diffraction. The results reveal that the AlN films remain (002) oriented even at high temperatures. A gradual increase of the tensile stress in the film due to the thermal expansion mismatch with the substrate has been observed. This increase accelerates around 600°C as the AlN film crystalline quality improves. This phenomenon could explain the amelioration in the SAW performance of AlN/sapphire devices observed previously between 600°C and 850°C. At higher temperatures, surface oxidation of the AlN films reduces the SAW performance. The potential of ZnO thin films as protective layers was finally examined.

  5. Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices.

    PubMed

    Iborra, Enrique; Clement, Marta; Sangrador, Jesús; Sanz-Hervás, Alfredo; Vergara, Lucía; Aguilar, Miguel

    2004-03-01

    We present a study of the effect of particle bombardment on the preferred orientation and the residual stress of polycrystalline aluminum nitride (AlN) thin films for surface acoustic wave (SAW) applications. Films were deposited on silicon (100) substrates by radio frequency (RF) sputtering of an aluminum target in an argon and nitrogen gas mixture. The main deposition parameters were changed as follows: the total pressure from 4 mTorr to 11 mTorr, the N2 content in the gas mixture from 20% to 80%, and the substrate self-bias voltage from -10 V to -30 V. If a sufficiently high negative substrate self-bias voltage is induced, (00.2)-oriented films are obtained over the full ranges of pressure and N2 content. Such films have values of residual stress ranging from -3 GPa to +1 GPa, depending on the deposition conditions. Our results suggest that the energy of the Ar ions colliding with the substrate controls the preferred orientation of the films, whereas the directionality of the ions (for the same energy) is the main factor determining the residual stress. To demonstrate the suitability of our material for the intended application, SAW filters with good electroacoustic response have been fabricated using AlN thin films with optimized (00.2) orientation and controlled residual stress.

  6. Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering

    NASA Astrophysics Data System (ADS)

    Saito, Kunio; Ono, Toshiro; Shimada, Masaru; Shigekawa, Naoteru; Enoki, Takatomo

    2005-01-01

    Amorphous AlN films deposited by sputtering using electron cyclotron resonance (ECR) plasma were used to form AlN/n-InP metal-insulator-semiconductor diodes. The AlN films were deposited without substrate heating. Capacitance-voltage (C-V) measurements showed a small hysteresis window of ˜35 mV for a 2-nm-thick AlN film, and frequency dispersion was much improved by post-deposition annealing at 200°C in an H2 gas atmosphere. We estimated the interface-trap density to be 3× 1012 cm-2eV-1 by comparing 10-kHz and 1-MHz C-V curves. Small leakage currents of less than 2 mA/cm2 at a bias voltage of 1 V were obtained for the 2-nm-thick film. To clarify the effect of the deposition methods, AlN films were deposited by conventional magnetron sputtering. ECR sputtering provided better C-V and current-voltage characteristics than magnetron sputtering for as-deposited AlN films, showing that good metal-insulator-semiconductor (MIS) properties arise because of the suitable deposition method and the good combination of materials. An analysis of surface atoms on the InP substrate by secondary ion mass spectrometry showed a large oxygen concentration on the order of 1022 cm-3, which is not preferable for MIS diode properties. Surface cleaning using dilute HF reduced oxygen and carbon concentrations to less than half.

  7. Compliant sleeve for ceramic turbine blades

    DOEpatents

    Cai, Hongda; Narasimhan, Dave; Strangman, Thomas E.; Easley, Michael L.; Schenk, Bjoern

    2000-01-01

    A compliant sleeve for attaching a ceramic member to a metal member is comprised of a superalloy substrate having a metal contacting side and a ceramic contacting side. The ceramic contacting side is plated with a layer of nickel followed by a layer of platinum. The substrate is then oxidized to form nickel oxide scale on the ceramic contacting side and a cobalt oxide scale on the metal contacting side. A lubricious coating of boron nitride is then applied over the metal contacting side, and a shear-stress limiting gold coating is applied over the ceramic contacting side.

  8. Impact strength and indentation hardness of high-strength ceramics

    SciTech Connect

    Grady, D.E.

    1993-08-01

    Hugoniot elastic limit and indentation hardness data are provided for selected high-strength ceramics AlN, Al{sub 2}O{sub 3}, B{sub 4}C, SiC, TiB, Zr{sub 2}. Degree of correlation of the strength data by the two test methods is examined. Influence of reformation mechanism on strength measurement, including rate sensitivity, size scale and confining pressure, is discussed.

  9. High temperature ceramic articles having corrosion resistant coating

    DOEpatents

    Stinton, D.P.; Lee, W.Y.

    1997-09-30

    A ceramic article is disclosed which includes a porous body of SiC fibers, Si{sub 3}N{sub 4} fibers, SiC coated fibers or Si{sub 3}N{sub 4} coated fibers, having at least one surface, the article having a coating of AlN adherently disposed throughout at least a portion of the porous body. 1 fig.

  10. Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers

    NASA Astrophysics Data System (ADS)

    Wu, C. H.; Lee, P. Y.; Chen, K. Y.; Tseng, Y. T.; Wang, Y. L.; Cheng, K. Y.

    2016-11-01

    Selective area growth (SAG) of high-density (2.5×109 cm-2) GaN nanowires (NWs) on Si(111) substrate by plasma-assisted molecular beam epitaxy is presented. The effects of morphology and thickness of the AlN seeding layer on the quality of SAG GaN NWs are investigated. A thin AlN seeding layer of 30 nm thick with a surface roughness of less than 0.5 nm is suitable for high quality SAG GaN NWs growth. High-density AlN nanopedestal arrays used as seeds for SAG GaN NWs are fabricated from thin AlN seeding layers using soft nanoimprint lithography. By adjusting the growth temperature and Ga/N flux ratio, hexagonal shaped SAG GaN NWs are realized. The quality of SAG GaN NWs is evaluated by low temperature photoluminescence (PL) measurements. Three major groups of PL peaks at 3.47, 3.45, and 3.41 eV are identified. The peak at 3.471 eV is related to the neutral donor-bound exciton emission, and the 3.41 eV broadband emission is attributed to stacking faults or structural defects. The 3.45 eV peak is identified as the emission due to exciton recombination at polar inversion domain boundaries of NWs.

  11. AlN Bandgap Temperature Dependence from its Optical Properties

    DTIC Science & Technology

    2008-06-07

    In the present work we report on the AlN gap energy temperature dependence studied through the optical properties of high-quality large bulk AlN...evolution of these features up to room temperature and inferred the gap energy temperature dependence using the exciton binding energy obtained by our group in the past.

  12. Investigation of the novel attributes of a double-gate graphene nanoribbon FET with AlN high-κ dielectrics

    NASA Astrophysics Data System (ADS)

    Owlia, Hadi; Keshavarzi, Parviz

    2014-11-01

    The use of high-κ dielectrics is an inevitable requirement to continue the historical performance scaling trend. Recently, the electrical transport characteristics of graphene FET on an aluminum nitride (AlN) substrate in spite of other common dielectric materials indicate significant improvement of carrier mobility. This paper proposes a novel double-gate graphene nanoribbon field-effect transistor (GNRFET) on AlN dielectric substrates. More studies exploring device characteristics are included to assess the performance over the conventional SiO2-based one. It is found that the high-κ GNRFET affords larger on current, on-off ratio, transconductance and intrinsic gain. The high-κ structure also provides further immunity against short-channel effects including drain-induced barrier-lowering and subthreshold swing.

  13. AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

    NASA Astrophysics Data System (ADS)

    Gautier, S.; Aggerstam, T.; Pinos, A.; Marcinkevičius, S.; Liu, K.; Shur, M.; O'Malley, S. M.; Sirenko, A. A.; Djebbour, Z.; Migan-Dubois, A.; Moudakir, T.; Ougazzaden, A.

    2008-11-01

    Al xGa 1-xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.

  14. Refractory Oxidative-Resistant Ceramic Carbon Insulation

    NASA Technical Reports Server (NTRS)

    Leiser, Daniel B. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    2001-01-01

    High-temperature, lightweight, ceramic carbon insulation is prepared by coating or impregnating a porous carbon substrate with a siloxane gel derived from the reaction of an organodialkoxy silane and an organotrialkoxy silane in an acid or base medium in the presence of the carbon substrate. The siloxane gel is subsequently dried on the carbon substrate to form a ceramic carbon precursor. The carbon precursor is pyrolyzed, in an inert atmosphere, to form the ceramic insulation containing carbon, silicon, and oxygen. The carbon insulation is characterized as a porous, fibrous, carbon ceramic tile which is particularly useful as lightweight tiles for spacecraft.

  15. Structural ceramics

    SciTech Connect

    Wachtman, J.B. Jr.

    1989-01-01

    The present work discusses opportunities for application of structural ceramics in heat engines, industrial-wear parts, prosthetics and bearings; conceptual and detailed design principles for structural ceramics; the processing, consolidation, and properties of members of the SiC family of structural ceramics; and the silicon nitride and sialon families of hot-pressed, sintered, and reaction-bonded, structural ceramics. Also discussed are partially-stabilized zirconia and zirconia-toughened ceramics for structural applications, the processing methods and mechanisms of fiber-reinforcement in ceramic-matrix fiber-reinforced composites, and the tribological properties of structural ceramics.

  16. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    SciTech Connect

    Panda, Padmalochan; Ramaseshan, R. Dash, S.; Krishna, Nanda Gopala

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  17. Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer

    NASA Astrophysics Data System (ADS)

    Wu, Xian; Liang, Renrong; Guo, Lei; Liu, Lei; Xiao, Lei; Shen, Shanshan; Xu, Jun; Wang, Jing

    2016-12-01

    Utilizing a non-polar plane substrate and an ultra-thin AlN passivation layer results in significantly improved interface properties of a GaN metal-oxide-semiconductor (MOS) device. After depositing an Al2O3 gate dielectric layer on GaN substrates with polar c-plane and non-polar m-plane surfaces, it is found that the devices on the non-polar surface show much better interface properties than those on the polar surface. To further improve the interface properties, an amorphous ultra-thin AlN layer is deposited on the substrate before the Al2O3 deposition. The interface properties of both devices on the c-plane and m-plane are dramatically improved by the AlN passivation layer. The interface trap density of the Al/Al2O3/AlN/GaN MOS capacitor on the non-polar surface is reduced by two orders of magnitude compared to that on the polar surface.

  18. Heterocycles Based on Group III, IV, and V Elements, Precursors for Novel Glasses and Ceramics

    DTIC Science & Technology

    1990-08-01

    SiMe 3 )2 . Further pyrolysis in an inert atmosphere gave 6AlN.Si 3N4 ; AlN was formed in ammonia. [(Me 3 Si) 2NAlNSiMe3 ]2 was obtained by reacting...NEt 3 gave Et3 N’Cl2AlN(SiMe3 )B(NH2 )NHSiMe3 , a processible precursor to AlN -BN ceramic. ii FOREWORD This Final Report describes the work performed...contribution of W. R. Schmidt of Rensselaer Polytechnic Institute for providing the XRD and EDS analyses as well as the high temperature pyrolysis studies. We

  19. Transient effects of ionizing and displacive radiation on the dielectric properties of ceramics

    NASA Astrophysics Data System (ADS)

    Goulding, R. H.; Zinkle, S. J.; Rasmussen, D. A.; Stoller, R. E.

    1996-03-01

    A resonant cavity technique was used to measure the dielectric constant and loss tangent of ceramic insulators at a frequency near 100 MHz during pulsed fission reactor irradiation near room temperature. Tests were performed on single crystal and several different grades of polycrystalline Al2O3, MgAl2O4, AlN, and Si3N4. Lead shielding experiments were performed for some of the irradiations in order to examine the importance of gamma ray versus neutron irradiation effects. With the exception of AlN, the dielectric constant of all of the ceramics decreased slightly (<0.2% change) during the pulsed fission reactor irradiation. The dielectric constant of AlN was observed to slightly increase during irradiation. Significant transient increases in the loss tangent to values as high as 6×10-3 occurred during pulsed reactor irradiation with peak ionizing and displacements per atom (dpa) radiation fields of 4.2×104 Gy/s and 2.4×10-6 dpa/s, respectively. The loss tangent measured during irradiation for the different ceramics did not show any correlation with the preirradiation or postirradiation values. Analysis of the results indicates that the transient increases in loss tangent are due to radiation induced increases in the electrical conductivity. The loss tangent increases were proportional to the ionizing dose rate in all materials except for AlN, which exhibited a dose rate exponent of ˜1.6.

  20. Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

    NASA Astrophysics Data System (ADS)

    Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

    2017-02-01

    Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

  1. Direct cooled power electronics substrate

    DOEpatents

    Wiles, Randy H [Powell, TN; Wereszczak, Andrew A [Oak Ridge, TN; Ayers, Curtis W [Kingston, TN; Lowe, Kirk T [Knoxville, TN

    2010-09-14

    The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.

  2. High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.

    PubMed

    Wang, Jiaming; Xu, Fujun; He, Chenguang; Zhang, Lisheng; Lu, Lin; Wang, Xinqiang; Qin, Zhixin; Shen, Bo

    2017-02-21

    Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 arcsec, indicating a great improvement of the tilting feature of the grain structures in the AlN epilayer. More importantly, there is no inversion domains (IDs) found in the AlN epilayers, which clarifies that optimal sapphire nitridation is promising in the growth of high quality AlN. It is deduced that the different interfacial atomic structures caused by various pretreatment conditions influence the orientation of the AlN nucleation layer grains, which eventually determines the tilting features of the AlN epilayers.

  3. High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Jiaming; Xu, Fujun; He, Chenguang; Zhang, Lisheng; Lu, Lin; Wang, Xinqiang; Qin, Zhixin; Shen, Bo

    2017-02-01

    Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 arcsec, indicating a great improvement of the tilting feature of the grain structures in the AlN epilayer. More importantly, there is no inversion domains (IDs) found in the AlN epilayers, which clarifies that optimal sapphire nitridation is promising in the growth of high quality AlN. It is deduced that the different interfacial atomic structures caused by various pretreatment conditions influence the orientation of the AlN nucleation layer grains, which eventually determines the tilting features of the AlN epilayers.

  4. High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

    PubMed Central

    Wang, Jiaming; Xu, Fujun; He, Chenguang; Zhang, Lisheng; Lu, Lin; Wang, Xinqiang; Qin, Zhixin; Shen, Bo

    2017-01-01

    Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 arcsec, indicating a great improvement of the tilting feature of the grain structures in the AlN epilayer. More importantly, there is no inversion domains (IDs) found in the AlN epilayers, which clarifies that optimal sapphire nitridation is promising in the growth of high quality AlN. It is deduced that the different interfacial atomic structures caused by various pretreatment conditions influence the orientation of the AlN nucleation layer grains, which eventually determines the tilting features of the AlN epilayers. PMID:28220829

  5. Coating MCPs with AlN and GaN

    NASA Technical Reports Server (NTRS)

    Bensaoula, Abdelhakim; Starikov, David; Boney, Chris

    2006-01-01

    A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N

  6. Ultraviolet photoluminescence from Gd-implanted AlN epilayers

    SciTech Connect

    Zavada, J. M.; Nepal, N.; Lin, J. Y.; Jiang, H. X.; Brown, E.; Hoemmerich, U.; Hite, J.; Thaler, G. T.; Abernathy, C. R.; Pearton, S. J.; Gwilliam, R.

    2006-10-09

    Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of {approx}6x10{sup 14} cm{sup -2}. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

  7. Ferromagnetism in Cu-doped AlN films

    NASA Astrophysics Data System (ADS)

    Ran, Fan-Yong; Subramanian, M.; Tanemura, Masaki; Hayashi, Yasuhiko; Hihara, Takehiko

    2009-09-01

    AlN films doped with 3.2-8.2 at. % Cu were deposited by helicon magnetron sputtering. The films exhibited ferromagnetism with a Curie temperature above 360 K. The observed magnetic anisotropy and exclusion of ferromagnetic contamination indicated that the ferromagnetism was the intrinsic property of Cu-doped AlN films. Room-temperature (RT) saturation magnetization (Ms) tended to decrease with increasing Cu concentration and the maximum RT Ms obtained was about 8.5 emu/cm3 (0.6 μB/Cu). Vacuum annealing increased the RT Ms values and meanwhile reduced ratio of N/(Al+Cu), which suggested that Al interstitial and N vacancy might contribute to the observed ferromagnetic behavior.

  8. On Ceramics.

    ERIC Educational Resources Information Center

    School Arts, 1982

    1982-01-01

    Presents four ceramics activities for secondary-level art classes. Included are directions for primitive kiln construction and glaze making. Two ceramics design activities are described in which students make bizarrely-shaped lidded jars, feet, and footwear. (AM)

  9. On Ceramics.

    ERIC Educational Resources Information Center

    School Arts, 1982

    1982-01-01

    Presents four ceramics activities for secondary-level art classes. Included are directions for primitive kiln construction and glaze making. Two ceramics design activities are described in which students make bizarrely-shaped lidded jars, feet, and footwear. (AM)

  10. Berkovich Nanoindentation on AlN Thin Films.

    PubMed

    Jian, Sheng-Rui; Chen, Guo-Ju; Lin, Ting-Chun

    2010-03-31

    Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm-3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young's modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young's modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple "pop-ins" observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load-displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

  11. Combinatorial approach to MgHf co-doped AlN thin films for Vibrational Energy Harvesters

    NASA Astrophysics Data System (ADS)

    Nguyen, H. H.; Oguchi, H.; Kuwano, H.

    2016-11-01

    In this report, we studied MgHf co-doped AlN ((Mg,Hf)xA11-xN) aiming for developing an AlN-based dielectric material with the large piezoelectric coefficient. To rapidly screen the wide range of composition, we applied combinatorial film growth approach. To get continuous composition gradient on a single substrate, films were deposited on Si (100) substrates by sputtering AlN and Mg-Hf targets simultaneously. Crystal structure was investigated by X-ray diffractometer equipped with a two-dimensional detector (2D-XRD). Composition was determined by Energy Dispersive Spectroscopy (EDS). These studies revealed that we successfully covered the widest ever composition range of 0 < x < 0.24 for this material. In addition, these studies found that we succeeded in realizing largest ever c-axis expansion of 2.7% at x = 0.24, which will lead to the highest enhancement in the piezoelectric coefficient. The results of this study opened the way for high-throughput development of the dielectric materials.

  12. Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

    SciTech Connect

    Bazlov, N. Pilipenko, N. Vyvenko, O.; Petrov, Yu.; Mikhailovskii, V.; Ubyivovk, E.; Kotina, I.; Zharinov, V.

    2016-06-17

    AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained traps of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.

  13. Ceramic Material.

    DTIC Science & Technology

    1990-05-02

    A ceramic material which is (1) ceramics based on monoclinic BaO.Al2O3.2SiO2; (2) ceramics based on monoclinic SrO.Al2O3.2SiO2; or (3) ceramics based on monoclinic solid solution of BaO.Al2O3.2SiO2 and SrO.Al2O3.2SiO2.

  14. Molecular beam epitaxy growth and optical properties of AlN nanowires

    NASA Astrophysics Data System (ADS)

    Landré, O.; Fellmann, V.; Jaffrennou, P.; Bougerol, C.; Renevier, H.; Cros, A.; Daudin, B.

    2010-02-01

    Growth of catalyst-free AlN nanowires has been achieved by plasma-assisted molecular beam epitaxy on SiO2/Si (100), by taking advantage of Volmer-Weber growth mode of AlN on amorphous SiO2. Using a combination of high resolution transmission electron microscopy and Raman spectroscopy, it is found that AlN nanowires are completely relaxed, which has been assigned to the compliant character of SiO2. Elastic strain relaxation of AlN nanowires has been further confirmed by photoluminescence experiments, showing in addition that spectra are dominated by near-band edge emission.

  15. 352 nm ultraviolet emission from high-quality crystalline AlN whiskers

    NASA Astrophysics Data System (ADS)

    Liu, Baodan; Bando, Yoshio; Wu, Aimin; Jiang, Xin; Dierre, Benjamin; Sekiguchi, Takashi; Tang, Chengchun; Mitome, Masanori; Golberg, Dmitri

    2010-02-01

    High-quality, crystalline AlN whiskers with large yield have been synthesized through the direct nitridation of Al vapor at high temperature. The AlN whiskers exhibited a strong and uniform ultraviolet emission at ~352 nm, which is notably shorter compared with the wavelength of previously reported one-dimensional AlN nanostructures. Energy filtered transmission electron microscope (TEM) analyses indicated that nitrogen deficiency and rather lower oxygen content in the AlN lattice might be responsible for the strong 352 nm ultraviolet emission.

  16. Similarities and differences in sublimation growth of SiC and AlN

    NASA Astrophysics Data System (ADS)

    Epelbaum, B. M.; Bickermann, M.; Nagata, S.; Heimann, P.; Filip, O.; Winnacker, A.

    2007-07-01

    The similarities and differences in development of crystal growth of bulk silicon carbide (SiC) and aluminum nitride (AlN) are discussed. It is concluded that AlN is going to become the second crystal grown in production scale using PVT technique. The growth technology of AlN may take advantage of learning from SiC technology as the latter is based on significant advances achieved in the course of last 20 years. The main differences between two materials are in incongruent evaporation of SiC and in poor compatibility of AlN with regular high-temperature crucible materials.

  17. Structural Ceramics

    NASA Technical Reports Server (NTRS)

    1986-01-01

    This publication is a compilation of abstracts and slides of papers presented at the NASA Lewis Structural Ceramics Workshop. Collectively, these papers depict the scope of NASA Lewis' structural ceramics program. The technical areas include monolithic SiC and Si3N4 development, ceramic matrix composites, tribology, design methodology, nondestructive evaluation (NDE), fracture mechanics, and corrosion.

  18. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Zhang, L. Q.; Liu, J. P.; Zhang, Y. T.; Du, G. T.

    2016-05-01

    A large field emission current density of 2.55 A/cm2 at 20.9 V and a low turn-on voltage of 7.28 V is obtained from the Si-doped 50 nm-thick AlN film, synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates, which is the best result reported for AlN film. Accompanying with atomic force surface micro-images, it is found that this current is achieved owing to a blunting process under a high voltage of 95 V, which can lead to a decrease of the root mean square roughness from 4.23 to 1.03 nm.

  19. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

    NASA Astrophysics Data System (ADS)

    Inoue, Shin-ichiro; Naoki, Tamari; Kinoshita, Toru; Obata, Toshiyuki; Yanagi, Hiroyuki

    2015-03-01

    Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

  20. Growth of high quality N-polar AlN(0001xAF) on Si(111) by plasma assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dasgupta, Sansaptak; Wu, F.; Speck, J. S.; Mishra, U. K.

    2009-04-01

    High quality N-polar AlN epilayers were grown and characterized on Si(111) substrates by plasma assisted molecular beam epitaxy as a first step toward growth of N-polar nitrides on Si(111). Polarity inversion to N-face by an optimized predeposition of Al adatoms on the reconstructed 7×7 Si(111) surface was investigated. Al adatoms can saturate the dangling bonds of Si atoms, resulting in growth of AlN in (0001¯) direction on subsequent exposure to N2 plasma. N-polarity was confirmed by observing strong 3×3 and 6×6 reflection high-energy electron diffraction reconstructions, convergent beam electron diffraction imaging and KOH etching studies. The structural properties were investigated by x-ray diffraction measurements, cross section and plan-view TEM studies.

  1. Ceramic nanostructures and methods of fabrication

    DOEpatents

    Ripley, Edward B.; Seals, Roland D.; Morrell, Jonathan S.

    2009-11-24

    Structures and methods for the fabrication of ceramic nanostructures. Structures include metal particles, preferably comprising copper, disposed on a ceramic substrate. The structures are heated, preferably in the presence of microwaves, to a temperature that softens the metal particles and preferably forms a pool of molten ceramic under the softened metal particle. A nano-generator is created wherein ceramic material diffuses through the molten particle and forms ceramic nanostructures on a polar site of the metal particle. The nanostructures may comprise silica, alumina, titania, or compounds or mixtures thereof.

  2. THE THICKNESS DEPENDENCE OF OXYGEN PERMEABILITY IN SOL-GEL DERIVED CGO-COFE2O4 THIN FILMS ON POROUS CERAMIC SUBSTRATES: A SPUTTERED BLOCKING LAYER FOR THICKNESS CONTROL

    SciTech Connect

    Brinkman, K

    2009-01-08

    Mixed conductive oxides are a topic of interest for applications in oxygen separation membranes as well as use in producing hydrogen fuel through the partial oxidation of methane. The oxygen flux through the membrane is governed both by the oxygen ionic conductivity as well as the material's electronic conductivity; composite membranes like Ce{sub 0.8}Gd{sub 0.2}O{sub 2-{delta}} (CGO)-CoFe{sub 2}O{sub 4} (CFO) use gadolinium doped ceria oxides as the ionic conducting material combined with cobalt iron spinel which serves as the electronic conductor. In this study we employ {approx} 50 nm sputtered CeO{sub 2} layers on the surface of porous CGO ceramic substrates which serve as solution 'blocking' layers during the thin film fabrication process facilitating the control of film thickness. Films with thickness of {approx} 2 and 4 microns were prepared by depositing 40 and 95 separate sol-gel layers respectively. Oxygen flux measurements indicated that the permeation increased with decreasing membrane thickness; thin film membrane with thickness on the micron level showed flux values an order of magnitude greater (0.03 {micro}mol/cm{sup 2} s) at 800 C as compared to 1mm thick bulk ceramic membranes (0.003 {micro}mol/cm{sup 2}).

  3. Ionic versus metallic bonding in AlnNam and AlnMgm (m ≤ 3, n + m ≤ 15) clusters

    NASA Astrophysics Data System (ADS)

    Grover, Cameron J.; Reber, Arthur C.; Khanna, Shiv N.

    2017-06-01

    First principles electronic structure studies on the ground state geometries, stability, and the electronic structure of AlnNam and AlnMgm (m ≤ 3, n + m ≤ 15) clusters have been carried out to examine the nature of bonding between Na or Mg and Al. Identifying whether the bonding is ionic or metallic in bulk materials is typically straightforward; however, in small clusters where quantum confinement is important, the nature of bonding may become unclear. We have performed a critical analysis of the bonding in these bimetallic clusters using charge analysis, electrical dipole moments, hybridization of the atomic orbitals, the Laplacian of the charge density at the bond critical points, and the change in the bonding energy between neutral and anionic forms of the cluster. For NanAlm clusters, we find that the Na binding is primarily ionic, while the bonding in AlnMgm is primarily metallic. We find that the Mulliken population of the 3p orbital of Na and Mg can provide a rapid assessment of the nature of bonding. We also find that the Hirshfeld charge and dipole moments are effective indicators, when placed in context. We found that the Laplacian of the charge density at the bond critical points can be misleading in identifying whether the bonding is ionic or metallic in small clusters.

  4. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    SciTech Connect

    Aoki, Takeshi Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-15

    This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  5. Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

    NASA Astrophysics Data System (ADS)

    Feng, Yuxia; Yang, Xuelin; Cheng, Jianpeng; Zhang, Jie; Ji, Panfeng; Shen, Jianfei; Hu, Anqi; Xu, Fujun; Yu, Tongjun; Wang, Xinqiang; Shen, Bo

    2017-05-01

    We have investigated the growth and relaxation mechanisms of anisotropic lattice misfit strain in AlN and GaN layers on Si (110) substrates. A qualitative model is proposed to explain the relaxation process. It is revealed that the anisotropic misfit strain is quickly relaxed in the low temperature AlN layer by the formation of interface misfit dislocations, small misoriented grains, and lattice distortion. As a result, isotropic properties and atomically smooth surface are observed in the high temperature AlN layer. Based on this isotropic AlN layer, a high quality GaN layer and AlGaN/GaN heterostructures with a high electron mobility of 2160 cm2/(V . s) have been obtained. This work will have important impacts on the understanding of the epitaxy of isotropic semiconductor films on anisotropic substrates.

  6. Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

    NASA Technical Reports Server (NTRS)

    Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Choi, Sang H.

    2012-01-01

    The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

  7. Pressure-density behavior for AlN, Al/sub 2/O/sub 3/, SiO/sub 2/, TiB/sub 2/ and TiC powders up to 3. 5 GPa

    SciTech Connect

    Weed, H C

    1984-06-01

    As part of a program to model the behavior of ceramic bodies suitable for high-strength, low-density applications, the pressure-density characteristics are determined for AlN, Al/sub 2/O/sub 3/, SiO/sub 2/, TiB/sub 2/, and TiC powders at 20/sup 0/C and a strain rate of 2 x 10/sup -4//sec. The pressure range is 0.11 MPa to 3.5 GPa. Both the loading and unloading cycles are examined. The pressure-density behavior can be represented by an empirical equation of state similar in functional form to the Birch-Murnaghan equation. The logarithm of the net compaction decreases linearly with the initial density ratio for AlN powder, and may do so for the others. The results constitute a database for testing models of powder behavior such as the P-..cap alpha.. model.

  8. Low stiffness tactile transducers based on AlN thin film and polyimide

    NASA Astrophysics Data System (ADS)

    Mastronardi, V. M.; Ceseracciu, L.; Guido, F.; Rizzi, F.; Athanassiou, A.; De Vittorio, M.; Petroni, S.

    2015-04-01

    In this paper, we propose a flexible piezoelectric MEMS transducer based on aluminum nitride thin film grown on polyimide soft substrate and developed for tactile sensing purposes. The proposed device consists of circular micro-cells, with a radius of 350 μm, made of polycrystalline c-axis textured AlN. The release of compressive stress by crystalline layers over polymer substrate allows an enhanced transduction response when the cell is patterned in circular dome-shaped geometries. The fabricated cells show an electromechanical response within the full scale range of 80 mN (≃200 kPa) both for dynamic and static load. The device is able to detect dynamic forces by exploiting both piezoelectric and flexoelectric capabilities of the aluminum nitride cells in a combined and synergistic sensing that occurs as voltage generation. No additional power supply is required to provide the electrical readout signals, making this technology suitable candidate when low power consumption is demanding. Moreover a capacitance variation under constant stress is observed, allowing the detection of static forces. The sensing ability of the AlN-based cells has been tested using an ad hoc setup, measuring both the applied load and the generated voltage and capacitance variation.

  9. Effects of AlN Coating Layer on High Temperature Characteristics of Langasite SAW Sensors

    PubMed Central

    Shu, Lin; Peng, Bin; Cui, Yilin; Gong, Dongdong; Yang, Zhengbing; Liu, Xingzhao; Zhang, Wanli

    2016-01-01

    High temperature characteristics of langasite surface acoustic wave (SAW) devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SAW devices coated with AlN films were measured from room temperature to 600 °C. The results show that the SAW devices can work up to 600 °C. The AlN coating layer can protect and improve the performance of the SAW devices at high temperature. The SAW velocity increases with increasing AlN coating layer thickness. The temperature coefficients of frequency (TCF) of the prepared SAW devices decrease with increasing thickness of AlN coating layers, while the electromechanical coupling coefficient (K2) of the SAW devices increases with increasing AlN film thickness. The K2 of the SAW devices increases by about 20% from room temperature to 600 °C. The results suggest that AlN coating layer can not only protect the SAW devices from environmental contamination, but also improve the K2 of the SAW devices. PMID:27608027

  10. Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Mogilatenko, A.; Knauer, A.; Zeimer, U.; Hartmann, C.; Oppermann, H.; Weyers, M.

    2017-03-01

    The effect of Si doping on defect density in AlN layers grown on sapphire was analysed. Si concentration in the range of 1019 cm-3 leads to dislocation line inclination in AlN layers with a threading dislocation density of 3×1010 cm-2. Overgrowth of Si doped AlN layers by non-intentionally doped AlN results in a reduction of threading dislocation density by a factor of two. In contrast, an increase of the Si concentration to an order of 1020 cm-3 leads to a structural degradation of the AlN layers. The degradation process takes place through transformation to columnar-like growth. In a second experiment the AlN/AlN:Si/AlN layers with a decreased defect density were trench-patterned and used for subsequent epitaxial lateral overgrowth. In comparison to the epitaxial lateral overgrowth of non-intentionally doped AlN templates, the use of the AlN templates containing an AlN:Si interlayer allows to reduce the threading dislocation density in the defect-rich regions above the ridges in 6 μm thick epitaxial laterally overgrown AlN by a factor of 2.5.

  11. Mass sensing AlN sensors for waste water monitoring

    NASA Astrophysics Data System (ADS)

    Porrazzo, R.; Potter, G.; Lydecker, L.; Foraida, Z.; Gattu, S.; Tokranova, N.; Castracane, J.

    2014-08-01

    Monitoring the presence of nanomaterials in waste water from semiconductor facilities is a critical task for public health organizations. Advanced semiconductor technology allows the fabrication of sensitive piezoelectric-based mass sensors with a detection limit of less than 1.35 ng/cm2 of nanomaterials such as nanoparticles of alumina, amorphous silica, ceria, etc. The interactions between acoustic waves generated by the piezoelectric sensor and nanomaterial mass attached to its surface define the sensing response as a shift in the resonant frequency. In this article the development and characterization of a prototype AlN film bulk acoustic resonator (FBAR) are presented. DC reactive magnetron sputtering was used to create tilted c-axis oriented AlN films to generate shear waves which don't propagate in liquids thus minimizing the acoustic losses. The high acoustic velocity of AlN over quartz allows an increase in resonance frequency in comparison with a quartz crystal microbalance (QCM) and results in a higher frequency shift per mass change, and thus greater sensitivity. The membrane and electrodes were fabricated using state of the art semiconductor technology. The device surface functionalization was performed to demonstrate selectivity towards a specific nanomaterial. As a result, the devices were covered with a "docking" layer that allows the nanomaterials to be selectively attached to the surface. This was achieved using covalent modification of the surface, specifically targeting ZnO nanoparticles. Our functionalization approach was tested using two different types of nanoparticles, and binding specificity was confirmed with various analytical techniques.

  12. Wet KOH etching of freestanding AlN single crystals

    NASA Astrophysics Data System (ADS)

    Bickermann, M.; Schmidt, S.; Epelbaum, B. M.; Heimann, P.; Nagata, S.; Winnacker, A.

    2007-03-01

    We investigated defect-selective wet chemical etching of freestanding aluminum nitride (AlN) single crystals and polished cuts in a molten NaOH-KOH eutectic at temperatures ranging from 240 to 400 °C. Due to the strong anisotropy of the AlN wurtzite structure, different AlN faces get etched at very different etching rates. On as-grown rhombohedral and prismatic facets, defect-related etching features could not be traced, as etching these facets was found to mainly emphasize features present already on the un-etched surface. On nitrogen polar basal planes, hexagonal pyramids/hillocks exceeding 100 μm in diameter may form within seconds of etching at 240 °C. They sometimes are arranged in lines and clusters, thus we attribute them to defects on the surface, presumably originating in the bulk material. On aluminum polar basal planes, the etch pit density which saturates after approx. 2-3 min of total etching time at 350 °C equals the density of a certain type of dislocations (presumably screw dislocations) threading the surface. Smaller etch pits form around annealed indentations, in the vicinity of some bigger etch pits after repeated etching, and sometimes also isolated on the surface area. Although alternate explanations exist, we attribute these etch pits to threading mixed and edge dislocations. This paper features etching parameters optimized for different planes and models on the formation of etching features especially on the polar faces. Finally, the issue of reliability and reproducibility of defect detection and evaluation by wet chemical etching is addressed.

  13. Energy harvesting based on piezoelectric AlN and AlScN thin films deposited by high rate sputtering

    NASA Astrophysics Data System (ADS)

    Frach, Peter; Barth, Stephan; Bartzsch, Hagen; Gloess, Daniel

    2017-05-01

    Aluminum nitride (AlN) is a piezoelectric material often used as thin film in SAW/BAW devices. Furthermore, there is an increasing interest in its use for energy harvesting applications. Despite it has a relatively low piezoelectric coefficient, it is a suitable choice for energy harvesting applications and due to its low dielectric constant and good mechanical properties. In addition, it is a lead-free material. The films were deposited by reactive pulsed magnetron sputtering using the Double Ring Magnetron DRM 400. This sputter source together with suitable powering and process control allows depositing piezoelectric AlN very homogeneously on 8" substrates with deposition rates of up to 200 nm/min. With the developed technology, film thicknesses of several ten microns are technically and economically feasible. Moreover, by adjusting process parameters accordingly, it is possible to tune properties, like film stress, to application specific requirements. Additionally, it is known that the doping of AlN with Scandium results in a significantly increased piezoelectric coefficient. The influence of process parameters and Sc concentration on film properties were determined by piezometer, pulse echo, SEM, XRD, EDS and nanoindentation measurements. Energy harvesting measurements were done using an electromechanical shaker system for the excitation of defined vibrations and a laservibrometer for determination of the displacement of the samples. The generated power was measured as function of electric load at resonance. An rms power of up to 140μW using AlN films and of 350μW using AlScN films was generated on Si test pieces of 8x80mm2. Furthermore, energy harvesting measurements using manually bended steel strips of 75x25mm2 coated with AlScN were carried out as well. When using only a single actuation, energy of up to 8μJ could be measured. By letting the system vibrate freely, the damped vibration at resonance 50Hz resulted in a measured energy of 420μJ.

  14. Ambient carbon dioxide capture by different dimensional AlN nanostructures: A comparative DFT study

    NASA Astrophysics Data System (ADS)

    Esrafili, Mehdi D.; Nurazar, Roghaye; Nematollahi, Parisa

    2016-08-01

    Strong binding of an isolated carbon dioxide molecule over three different aluminium nitride (AlN) nanostructures (nanocage, nanotube and nanosheet) is verified using density functional calculations. Equilibrium geometries, electronic properties, adsorption energies and thermodynamic stability of each adsorbed configuration are also identified. Optimized configurations are shown at least one corresponding physisorption and chemisorption of CO2 molecule over different AlN nanostructures. Also, the effect of chirality on the adsorption of CO2 molecule is studied over two different finite-sized zigzag (6,0) and armchair (4,4) AlN nanotubes. It is found that the electronic properties of the Al12N12 nanocage are more sensitive to the CO2 molecule than other AlN nanostructures. This indicates the significant potential of Al12N12 nanocage toward the CO2 adsorption, fixation and catalytic applications in contrast to other AlN nanostructures.

  15. How to reduce the Al-texture in AlN films during film preparation

    NASA Astrophysics Data System (ADS)

    Yin, Ju-qian; Chen, Xi-ming; Yang, Bao-he; Zhang, Qian; Wu, Xiao-guo

    2012-09-01

    The preparation of aluminum nitrogen (AlN) film without Al texture is of great significance for the manufacture of high-performance surface acoustic wave (SAW) device. We research the process factors which bring Al into AlN film due to radio frequency (RF) magnetron sputtering system, and discuss how the process parameters influence the AlN thin film containing Al. In the research, it is found that the high sputtering power, the low deposition pressures and low partial pressure of Ar can lead to growing Al-texture during AlN thin film preparation, and the experiment also shows that filling the chamber with nitrogen gas can recrystallize a small amount of Al composition into AlN film during the annealing process in the high temperature environment.

  16. High-T sub c fluorine-doped YBa2Cu3O(y) films on ceramic substrates by screen printing

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.

    1991-01-01

    Thick films of fluorine-doped YBa2Cu3O(y) were screen printed on highly polished alumina, magnesia spinel, strontium titanate, and yttria-stabilized zirconia (YSZ) substrates. They were annealed at 1000 C and soaked in oxygen at 450 C, followed by slow cooling to room temperature. The films were characterized by electrical resistivity measurements as a function of temperature and x-ray diffraction. The film on YSZ showed the best characteristics with a T sub c (onset) of 91 K, T sub c (R equals 0) of 88.2 K, and a transition width, delta T sub c (10-90 percent), of approximately 1.7 K. The film adhesion, probably controlled by interdiffusion of cations between the film and the substrate, was good in all cases except on strontium titanate where the film completely detached from the substrate.

  17. Study of the interfacial reactions between a bioactive apatite-mullite glass-ceramic coating and titanium substrates using high angle annular dark field transmission electron microscopy.

    PubMed

    Stanton, Kenneth T; O'Flynn, Kevin P; Nakahara, Shohei; Vanhumbeeck, Jean-François; Delucca, John M; Hooghan, Bobby

    2009-04-01

    Glass of generic composition SiO(2) . Al(2)O(3) . P(2)O(5) . CaO . CaF(2) will crystallise predominantly to apatite and mullite upon heat-treatment. Such ceramics are bioactive, osseoconductive, and have a high resistance to fracture. As a result, they are under investigation for use as biomedical device coatings, and in particular for orthopaedic implants. Previous work has shown that the material can be successfully enamelled to titanium with an interfacial reaction zone produced during heat treatment. The present study uses high angle annular dark field transmission electron microscopy (HAADF-TEM) to conduct a detailed examination of this region. Results show evidence of complex interfacial reactions following the diffusion of titanium into an intermediate layer and the production of titanium silicides and titanium phosphides. These results confirm previously hypothesised mechanisms for the bonding of silicate bioceramics with titanium alloys.

  18. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  19. Influence of aluminium nitride as a foaming agent on the preparation of foam glass-ceramics from high-titanium blast furnace slag

    NASA Astrophysics Data System (ADS)

    Shi, Huan; Feng, Ke-qin; Wang, Hai-bo; Chen, Chang-hong; Zhou, Hong-ling

    2016-05-01

    To effectively reuse high-titanium blast furnace slag (TS), foam glass-ceramics were successfully prepared by powder sintering at 1000°C. TS and waste glass were used as the main raw materials, aluminium nitride (AlN) as the foaming agent, and borax as the fluxing agent. The influence of the amount of AlN added (1wt%-5wt%) on the crystalline phases, microstructure, and properties of the produced foam glass-ceramics was studied. The results showed that the main crystal phases were perovskite, diopside, and augite. With increasing AlN content, a transformation from diopside to augite occurred and the crystallinity of the pyroxene phases slightly decreased. Initially, the average pore size and porosity of the foam glass-ceramics increased and subsequently decreased; similarly, their bulk density and compressive strength decreased and subsequently increased. The optimal properties were obtained when the foam glass-ceramics were prepared by adding 4wt% AlN.

  20. Tantalum-Based Ceramics for Refractory Composites

    NASA Technical Reports Server (NTRS)

    Stewart, David A.; Leiser, Daniel; DiFiore, Robert; Kalvala, Victor

    2006-01-01

    A family of tantalum-based ceramics has been invented as ingredients of high-temperature composite insulating tiles. These materials are suitable for coating and/or permeating the outer layers of rigid porous (foam-like or fibrous) ceramic substrates to (1) render the resulting composite ceramic tiles impervious to hot gases and (2) enable the tiles to survive high heat fluxes at temperatures that can exceed 3,000 F ( 1,600 C).

  1. Methods of repairing a substrate

    NASA Technical Reports Server (NTRS)

    Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

    2011-01-01

    A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium boride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

  2. Ceramic joining

    SciTech Connect

    Loehman, R.E.

    1996-04-01

    This paper describes the relation between reactions at ceramic-metal interfaces and the development of strong interfacial bonds in ceramic joining. Studies on a number of systems are described, including silicon nitrides, aluminium nitrides, mullite, and aluminium oxides. Joints can be weakened by stresses such as thermal expansion mismatch. Ceramic joining is used in a variety of applications such as solid oxide fuel cells.

  3. Ceramic Processing

    SciTech Connect

    EWSUK,KEVIN G.

    1999-11-24

    Ceramics represent a unique class of materials that are distinguished from common metals and plastics by their: (1) high hardness, stiffness, and good wear properties (i.e., abrasion resistance); (2) ability to withstand high temperatures (i.e., refractoriness); (3) chemical durability; and (4) electrical properties that allow them to be electrical insulators, semiconductors, or ionic conductors. Ceramics can be broken down into two general categories, traditional and advanced ceramics. Traditional ceramics include common household products such as clay pots, tiles, pipe, and bricks, porcelain china, sinks, and electrical insulators, and thermally insulating refractory bricks for ovens and fireplaces. Advanced ceramics, also referred to as ''high-tech'' ceramics, include products such as spark plug bodies, piston rings, catalyst supports, and water pump seals for automobiles, thermally insulating tiles for the space shuttle, sodium vapor lamp tubes in streetlights, and the capacitors, resistors, transducers, and varistors in the solid-state electronics we use daily. The major differences between traditional and advanced ceramics are in the processing tolerances and cost. Traditional ceramics are manufactured with inexpensive raw materials, are relatively tolerant of minor process deviations, and are relatively inexpensive. Advanced ceramics are typically made with more refined raw materials and processing to optimize a given property or combination of properties (e.g., mechanical, electrical, dielectric, optical, thermal, physical, and/or magnetic) for a given application. Advanced ceramics generally have improved performance and reliability over traditional ceramics, but are typically more expensive. Additionally, advanced ceramics are typically more sensitive to the chemical and physical defects present in the starting raw materials, or those that are introduced during manufacturing.

  4. Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)

    NASA Astrophysics Data System (ADS)

    Mula, Guido; Adelmann, C.; Moehl, S.; Oullier, J.; Daudin, B.

    2001-11-01

    We study the adsorption of Ga on (0001) GaN surfaces by reflection high-energy electron diffraction. It is shown that a dynamically stable Ga bilayer can be formed on the GaN surface for appropriate Ga fluxes and substrate temperatures. The influence of the presence of this Ga film on the growth mode of GaN on AlN(0001) by plasma-assisted molecular-beam epitaxy is studied. It is demonstrated that under nearly stoichiometric and N-rich conditions, the GaN layer relaxes elastically during the first stages of epitaxy. At high temperatures the growth follows a Stranski-Krastanov mode, whereas at lower temperatures kinetically formed flat platelets are observed. Under Ga-rich conditions-where a Ga bilayer is rapidly formed due to excess Ga accumulating on the surface-the growth follows a Frank-van der Merwe layer-by-layer mode at any growth temperature and no initial elastic relaxation occurs. Hence, it is concluded that excess Ga acts as a surfactant, effectively suppressing both Stranski-Krastanov islanding and platelet formation. It is further demonstrated that the Stranski-Krastanov transition is in competition with elastic relaxation by platelets, and it is only observed when relaxation by platelets is inefficient. As a result, a growth mode phase diagram is outlined for the growth of GaN on AlN(0001).

  5. On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process

    SciTech Connect

    Van Bui, H. E-mail: M.P.deJong@utwente.nl; Wiggers, F. B.; Kovalgin, A. Y.; Jong, M. P. de E-mail: M.P.deJong@utwente.nl; Friedlein, R.; Yamada-Takamura, Y.

    2015-02-14

    Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB{sub 2}(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH{sub 3}) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH{sub 3} molecules, at temperatures of 300 °C and 400 °C, respectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.

  6. On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process

    NASA Astrophysics Data System (ADS)

    Van Bui, H.; Wiggers, F. B.; Friedlein, R.; Yamada-Takamura, Y.; Kovalgin, A. Y.; de Jong, M. P.

    2015-02-01

    Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB2(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH3) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH3 molecules, at temperatures of 300 °C and 400 °C, respectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si-C and Si-N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.

  7. GHz spurious mode free AlN lamb wave resonator with high figure of merit using one dimensional phononic crystal tethers

    NASA Astrophysics Data System (ADS)

    Wu, Guoqiang; Zhu, Yao; Merugu, Srinivas; Wang, Nan; Sun, Chengliang; Gu, Yuandong

    2016-07-01

    This letter reports a spurious mode free GHz aluminum nitride (AlN) lamb wave resonator (LWR) towards high figure of merit (FOM). One dimensional gourd-shape phononic crystal (PnC) tether with large phononic bandgaps is employed to reduce the acoustic energy dissipation into the substrate. The periodic PnC tethers are based on a 1 μm-thick AlN layer with 0.26 μm-thick Mo layer on top. A clean spectrum over a wide frequency range is obtained from the measurement, which indicates a wide-band suppression of spurious modes. Experimental results demonstrate that the fabricated AlN LWR has an insertion loss of 5.2 dB and a loaded quality factor (Q) of 1893 at 1.02 GHz measured in air. An impressive ratio of the resistance at parallel resonance (Rp) to the resistance at series resonance (Rs) of 49.8 dB is obtained, which is an indication of high FOM for LWR. The high Rp to Rs ratio is one of the most important parameters to design a radio frequency filter with steep roll-off.

  8. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  9. AlN grown on Si(1 1 1) by ammonia-molecular beam epitaxy in the 900-1200 °C temperature range

    NASA Astrophysics Data System (ADS)

    Tamariz, Sebastian; Martin, Denis; Grandjean, Nicolas

    2017-10-01

    We present a comprehensive study of AlN growth on Si(1 1 1) substrate by gas source molecular beam epitaxy with ammonia as nitrogen precursor in the high temperature range. We first demonstrate that the observation of the silicon 7 × 7 surface reconstruction by reflection high energy electron diffraction can be misleading as this technique is not sensitive to low density surface defects like SiC crystallites. A careful in situ cleaning procedure with annealing cycles at 1100 °C allows getting rid of any surface defects, as shown by atomic force microscopy imaging. Then, we explore the effect of the growth temperature on the surface morphology and structural properties of 100 nm thick AlN epilayers. At 1200 °C, the growth proceeds with the step flow mode regime, which induces spiral-growth around screw-type dislocations and therefore surface roughening. On the other hand, a smooth surface morphology can be achieved by setting the temperature at 1100 °C, which corresponds to the growth mode transition from two-dimensional nucleation to step flow. A further decrease of the growth temperature to 900 °C leads to surface defects ascribed to polarity inversion domains. Similar defects are observed for growths performed at 1100 °C when the NH3 flow is reduced below 100 sccm. This points out the sensitivity of AlN to the surface stoichiometry.

  10. Ceramic filters

    SciTech Connect

    Holmes, B.L.; Janney, M.A.

    1995-12-31

    Filters were formed from ceramic fibers, organic fibers, and a ceramic bond phase using a papermaking technique. The distribution of particulate ceramic bond phase was determined using a model silicon carbide system. As the ceramic fiber increased in length and diameter the distance between particles decreased. The calculated number of particles per area showed good agreement with the observed value. After firing, the papers were characterized using a biaxial load test. The strength of papers was proportional to the amount of bond phase included in the paper. All samples exhibited strain-tolerant behavior.

  11. Ceramic design concepts based on stress distribution analysis.

    PubMed

    Esquivel-Upshaw, J F; Anusavice, K J

    2000-08-01

    This article discusses general design concepts involved in fabricating ceramic and metal-ceramic restorations based on scientific stress distribution data. These include the effects of ceramic layer thickness, modulus of elasticity of supporting substrates, direction of applied loads, intraoral stress, and crown geometry on the susceptibility of certain restoration designs to fracture.

  12. Unique high temperature microwave sintering of aluminum nitride based ceramics with high thermal conductivity

    NASA Astrophysics Data System (ADS)

    Xu, Gengfu

    High temperature microwave sintering is one of the most challenging areas in microwave processing of ceramics. In this dissertation, for the first time, stable, controlled "ultra" high temperature (up to 2100°C) microwave sintering was achieved by development of a unique insulation system based on BN/ZrO2 fiber composite powder synthesized by a unique processing route. It uses a system approach to mitigate the tendency of all insulation materials to interfere with specimen coupling. This insulation system allows stable, controlled ultra high microwave sintering and could be modified to microwave process materials with different thermal, dielectric properties with improved properties. In addition, unlike other high temperature microwave insulation schemes that must be replaced after each run, the insulation system is robust enough for repeated use. Using the insulation design, high density and very high thermal conductivity (˜225 W/m·K) AlN ceramics were fabricated much more efficiently (≤6 hours versus 10's to 100's of hours at high temperature) by microwave sintering than by comparable conventional sintering. A detailed data study of densification, grain growth and thermal conductivity in microwave sintered AlN indicated that there were two time regimes in the development of high thermal conductivity AlN and that oxygen removal was more important to the development of high thermal conductivity than removal of the liquid phase sintering phase. While there have been many previous studies examining processing of high thermal conductivity AlN, this was the first study of microwave processing of high thermal conductivity AlN. AlN-TiB2 composites, which had previously only been successfully densified with pressure-assisted techniques such as HIPing or hot pressing, were successfully microwave sintered in this dissertation. The effect of TiB 2 on the densification behavior and thermal, mechanical, and dielectric properties of microwave sintered AlN based composites

  13. Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers

    SciTech Connect

    Yadav, S. K. E-mail: yadav.satyesh@gmail.com Liu, X.-Y. E-mail: yadav.satyesh@gmail.com; Wang, J.

    2016-06-14

    An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. The formation of a zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamically driven process.

  14. Integrating AlN with GdN Thin Films in an in Situ CVD Process: Influence on the Oxidation and Crystallinity of GdN.

    PubMed

    Cwik, Stefan; Beer, Sebastian M J; Hoffmann, Stefanie; Krasnopolski, Michael; Rogalla, Detlef; Becker, Hans-Werner; Peeters, Daniel; Ney, Andreas; Devi, Anjana

    2017-08-16

    The application potential of rare earth nitride (REN) materials has been limited due to their high sensitivity to air and moisture leading to facile oxidation upon exposure to ambient conditions. For the growth of device quality films, physical vapor deposition methods, such as molecular beam epitaxy, have been established in the past. In this regard, aluminum nitride (AlN) has been employed as a capping layer to protect the functional gadolinium nitride (GdN) from interaction with the atmosphere. In addition, an AlN buffer was employed between a silicon substrate and GdN serving as a seeding layer for epitaxial growth. In pursuit to grow high-quality GdN thin films by chemical vapor deposition (CVD), this successful concept is transferred to an in situ CVD process. Thereby, AlN thin films are included step-wise in the stack starting with Si/GdN/AlN structures to realize long-term stability of the oxophilic GdN layer. As a second strategy, a Si/AlN/GdN/AlN stacked structure was grown, where the additional buffer layer serves as the seeding layer to promote crystalline GdN growth. In addition, chemical interaction between GdN and the Si substrate can be prevented by spatial segregation. The stacked structures grown for the first time with a continuous CVD process were subjected to a detailed investigation in terms of structure, morphology, and composition, revealing an improved GdN purity with respect to earlier grown CVD thin films. Employing thin AlN buffer layers, the crystallinity of the GdN films on Si(100) could additionally be significantly enhanced. Finally, the magnetic properties of the fabricated stacks were evaluated by performing superconducting quantum interference device measurements, both of the as-deposited films and after exposure to ambient conditions, suggesting superparamagnetism of ferromagnetic GdN grains. The consistency of the magnetic properties precludes oxidation of the REN material due to the amorphous AlN capping layer.

  15. Design, Synthesis, and Chemical Processing of Hierarchical Ceramic Structures for Aerospace Applications

    DTIC Science & Technology

    1993-03-30

    coacervation of a I composite . In addition, green density and pore polymer to cause flocculation. In our case. diameters were measured by Hg porosimetry... composites ,I .. nanocomposites, SiC, TiB7 , TiN, TiC, cordierite, A1 2 03, AlN, synthesis, metal organic precursors, 19. ABSTRACT (Continue on reverse if...demonstrated that nanosized powders can be processed to obtain ceramic composites with ultrafine microstructures and high densities. Nanosized powders of

  16. [Ceramic posts].

    PubMed

    Mainjot, Amélie; Legros, Caroline; Vanheusden, Alain

    2006-01-01

    As a result of ceramics and all-ceram technologies development esthetic inlay core and abutments flooded the market. Their tooth-colored appearance enhances restoration biomimetism principally on the marginal gingiva area. This article reviews indications and types of cores designed for natural teeth and implants.

  17. A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors

    NASA Astrophysics Data System (ADS)

    Hu, Wei-Guo; Liu, Xiang-Lin; Zhang, Pan-Feng; Zhao, Feng-Ai; Jiao, Chun-Mei; Wei, Hong-Yuan; Zhang, Ri-Qing; Wu, Jie-Jun; Cong, Guang-Wei; Pan, Yi

    2007-02-01

    Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Ω scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nm. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

  18. More About Plasma-Spraying Ceramics Onto Smooth Metals

    NASA Technical Reports Server (NTRS)

    Miller, Robert A.; Doychak, Joseph

    1995-01-01

    Paper presents additional information on fabrication process described in "Plasma-Spraying Ceramics Onto Smooth Metallic Substrates" (LEW-15164). Provides additional information on specific substrate materials advantageously coated in two-stage plasma-spraying process.

  19. Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates

    NASA Astrophysics Data System (ADS)

    Bengoechea-Encabo, A.; Albert, S.; Müller, M.; Xie, M.–Y.; Veit, P.; Bertram, F.; Sanchez-Garcia, M. A.; Zúñiga-Pérez, J.; de Mierry, P.; Christen, J.; Calleja, E.

    2017-09-01

    Despite the strong interest in optoelectronic devices working in the deep ultraviolet range, no suitable low cost, large-area, high-quality AlN substrates have been available up to now. The aim of this work is the selective area growth of AlN nanocolumns by plasma assisted molecular beam epitaxy on polar (0001) and semi-polar (11-22) GaN/sapphire templates. The resulting AlN nanocolumns are vertically oriented with semi-polar {1-103} top facets when grown on (0001) GaN/sapphire, or oriented at 58° from the template normal and exposing {1-100} non-polar top facets when growing on (11-22) GaN/sapphire, in both cases reaching filling factors ≥80%. In these kinds of arrays each nanostructure could function as a building block for an individual nano-device or, due to the large filling factor values, the overall array top surfaces could be seen as a quasi (semi-polar or non-polar) AlN pseudo-template.

  20. Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates.

    PubMed

    Bengoechea-Encabo, A; Albert, S; Müller, M; Xie, M-Y; Veit, P; Bertram, F; Sanchez-Garcia, M A; Zúñiga-Pérez, J; de Mierry, P; Christen, J; Calleja, E

    2017-09-08

    Despite the strong interest in optoelectronic devices working in the deep ultraviolet range, no suitable low cost, large-area, high-quality AlN substrates have been available up to now. The aim of this work is the selective area growth of AlN nanocolumns by plasma assisted molecular beam epitaxy on polar (0001) and semi-polar (11-22) GaN/sapphire templates. The resulting AlN nanocolumns are vertically oriented with semi-polar {1-103} top facets when grown on (0001) GaN/sapphire, or oriented at 58° from the template normal and exposing {1-100} non-polar top facets when growing on (11-22) GaN/sapphire, in both cases reaching filling factors ≥80%. In these kinds of arrays each nanostructure could function as a building block for an individual nano-device or, due to the large filling factor values, the overall array top surfaces could be seen as a quasi (semi-polar or non-polar) AlN pseudo-template.

  1. Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

    NASA Astrophysics Data System (ADS)

    Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

    2017-06-01

    Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

  2. Mechanism of stress control for GaN growth on Si using AlN interlayers

    NASA Astrophysics Data System (ADS)

    Suzuki, Michihiro; Nakamura, Akihiro; Nakano, Yoshiaki; Sugiyama, Masakazu

    2017-04-01

    For the purpose of controlling the wafer bow of GaN-on-Si structure, in situ curvature transient during the growth of a GaN layer on an AlN interlayer was investigated systematically by estimating the compressive strain applied to the GaN layer with the progress of the layer growth. The compressive strain was dependent on the morphology of the GaN surface prior to the growth of the AlN interlayer. It was found that the transition sequence from GaN growth to AlN growth induces roughening of the GaN surface and both high NH3 partial pressure and the short transition time were effective for reducing the roughness of the GaN surface beneath the AlN interlayer. The improved transition sequence increased the compressive strain in GaN by a factor of 2.5. The AlN grown at the same temperature as that of GaN was beneficial in both better surface morphology and the reduction of the transition time between GaN growth and AlN growth. With this high-temperature AlN interlayer, its thickness is another important factor governing the compressive strain in GaN. To get AlN relaxed for applying the compressive strain to GaN, the AlN layer should be thicker but too thick layer after relaxation results in surface roughening, which in turn introduces defects to the overlying GaN layer and reduces the compressive strain by partial lattice relaxation of GaN.

  3. Method for non-destructive evaluation of ceramic coatings

    SciTech Connect

    Peterson, Kristen A.; Rosen, Elias P.; Jordan, Eric H.; Shahbazmohamadi, Sina; Vakhtin, Andrei B.

    2016-11-08

    A method for evaluating the condition of a ceramic coating deposited on a substrate comprising illuminating the ceramic coating with light, measuring the intensity of light returned from the ceramic coating as function of depth in the coating and transverse position on the coating, and analyzing the measured light intensities to obtain one or more of intensity of the light returned from the exposed coating surface relative to the intensity of light returned from the coating/substrate interface, intensity of the light returned from the coating/substrate interface relative to the intensity of light returned from the bulk of the ceramic coating, determination of roughness at the exposed surface of the ceramic coating, and determination of roughness of the interface between the ceramic coating and underlying bond coat or substrate.

  4. A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth

    NASA Technical Reports Server (NTRS)

    Beye, R.; George, T.; Yang, J. W.; Khan, M. A.

    1996-01-01

    A structural examination of aluminum nitride growth on [111] silicon was carried out using transmission electron microscopy. Electron diffraction indicates that the basal planes of the wurtzitic overlayer mimic the orientation of the close-packed planes of the substrate. However, considerable, random rotation in the basal plane and random out-of-plane tilts were evident. This article examines these issues with a structural examination of AlN and GaN/AlN on silicon and compares the findings to those reported in the literature.

  5. A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth

    NASA Technical Reports Server (NTRS)

    Beye, R.; George, T.; Yang, J. W.; Khan, M. A.

    1996-01-01

    A structural examination of aluminum nitride growth on [111] silicon was carried out using transmission electron microscopy. Electron diffraction indicates that the basal planes of the wurtzitic overlayer mimic the orientation of the close-packed planes of the substrate. However, considerable, random rotation in the basal plane and random out-of-plane tilts were evident. This article examines these issues with a structural examination of AlN and GaN/AlN on silicon and compares the findings to those reported in the literature.

  6. Giant magnetoelectric coefficients in (Fe90Co10)78Si12B10-AlN thin film composites

    NASA Astrophysics Data System (ADS)

    Greve, Henry; Woltermann, Eric; Quenzer, Hans-Joachim; Wagner, Bernhard; Quandt, Eckhard

    2010-05-01

    Thin film magnetoelectric (ME) two-two composites consisting of AlN and amorphous (Fe90Co10)78Si12B10 layers were fabricated by magnetron sputtering on Si (100) substrates. Upon magnetic field annealing they show an extremely high ME coefficient of 737 V/cm Oe at mechanical resonance at 753 Hz and 3.1 V/cm Oe out of resonance at 100 Hz. These are the highest reported ME coefficients in thin film composites ever. Furthermore, the induced magnetic anisotropy by field annealing serves the possibility to obtain a sensor element with a pronounced sensitivity in only one dimension, which allows the realization of a three-dimensional vector field sensor.

  7. OXYGEN TRANSPORT CERAMIC MEMBRANES

    SciTech Connect

    Dr. Sukumar Bandopadhyay; Dr. Nagendra Nagabhushana

    2001-05-01

    The mechanical properties of model systems were analyzed. A reasonably accurate finite element model was implemented and a rational metric to predict the strength of ceramic/metal concentrical joints was developed. The mode of failure of the ceramic/metal joints was determined and the importance of the mechanical properties of the braze material was assessed. Thermal cycling experiments were performed on the model systems and the results were discussed. Additionally, experiments using the concept of placing diffusion barriers on the ceramic surface to limit the extent of the reaction with the braze were performed. It was also observed that the nature and morphology of the reaction zone depends greatly on the nature of the perovskite structure being used. From the experiments, it is observed that the presence of Cr in the Fe-occupied sites decreases the tendency of Fe to segregate and to precipitate out of the lattice. In these new experiments, Ni was observed to play a major role in the decomposition of the ceramic substrate.

  8. OXYGEN TRANSPORT CERAMIC MEMBRANES

    SciTech Connect

    Dr. Sukumar Bandopadhyay; Dr. Nagendfra Nagabhushana

    2001-07-01

    The mechanical properties of model systems were analyzed. A reasonably accurate finite element model was implemented and a rational metric to predict the strength of ceramic/metal concentrical joints was developed. The mode of failure of the ceramic/metal joints was determined and the importance of the mechanical properties of the braze material was assessed. Thermal cycling experiments were performed on the model systems and the results were discussed. Additionally, experiments using the concept of placing diffusion barriers on the ceramic surface to limit the extent of the reaction with the braze were performed. It was also observed that the nature and morphology of the reaction zone depends greatly on the nature of the perovskite structure being used. From the experiments, it is observed that the presence of Cr in the Fe-occupied sites decreases the tendency of Fe to segregate and to precipitate out of the lattice. In these new experiments, Ni was observed to play a major role in the decomposition of the ceramic substrate.

  9. Strong bonding between sputtered bioglass-ceramic films and Ti-substrate implants induced by atomic inter-diffusion post-deposition heat-treatments

    NASA Astrophysics Data System (ADS)

    Stan, G. E.; Popa, A. C.; Galca, A. C.; Aldica, G.; Ferreira, J. M. F.

    2013-09-01

    Bioglasses (BG) are the inorganic materials exhibiting the highest indices of bioactivity. Their appliance as films for bio-functionalization of metallic implant surfaces has been regarded as an optimal solution for surpassing their limited bulk mechanical properties. This study reports on magnetron sputtering of alkali-free BG thin films by varying the target-to-substrate working distance, which proved to play an important role in determining the films’ properties. Post deposition heat-treatments at temperatures slightly above the glass transformation temperature were then applied to induce inter-diffusion processes at the BG/titanium substrate interface and strengthening the bonding as determined by pull-out adherence measurements. The morphological and structural features assessed by SEM-EDS, XRD, and FTIR revealed a good correlation between the formations of inter-metallic titanium silicide phases and the films’ bonding strength. The highest mean value of pull-out adherence (60.3 ± 4.6 MPa), which is adequate even for load-bearing biomedical applications, was recorded for films deposited at a working distance of 35 mm followed by a heat-treatment at 750 °C for 2 h in air. The experimental findings are explained on the basis of structural, compositional and thermodynamic considerations.

  10. Mixture for producing fracture-resistant, fiber-reinforced ceramic material by microwave heating

    DOEpatents

    Meek, Thomas T.; Blake, Rodger D.

    1987-01-01

    A fracture-resistant, fiber-reinforced ceramic substrate is produced by a method which involves preparing a ceramic precursor mixture comprising glass material, a coupling agent, and resilient fibers, and then exposing the mixture to microwave energy. The microwave field orients the fibers in the resulting ceramic material in a desired pattern wherein heat later generated in or on the substrate can be dissipated in a desired geometric pattern parallel to the fiber pattern. Additionally, the shunt capacitance of the fracture-resistant, fiber-reinforced ceramic substrate is lower which provides for a quicker transit time for electronic pulses in any conducting pathway etched into the ceramic substrate.

  11. Mixture for producing fracture-resistant, fiber-reinforced ceramic material by microwave heating

    DOEpatents

    Meek, T.T.; Blake, R.D.

    1987-09-22

    A fracture-resistant, fiber-reinforced ceramic substrate is produced by a method which involves preparing a ceramic precursor mixture comprising glass material, a coupling agent, and resilient fibers, and then exposing the mixture to microwave energy. The microwave field orients the fibers in the resulting ceramic material in a desired pattern wherein heat later generated in or on the substrate can be dissipated in a desired geometric pattern parallel to the fiber pattern. Additionally, the shunt capacitance of the fracture-resistant, fiber-reinforced ceramic substrate is lower which provides for a quicker transit time for electronic pulses in any conducting pathway etched into the ceramic substrate. 2 figs.

  12. Mixture for producing fracture-resistant, fiber-reinforced ceramic material by microwave heating

    DOEpatents

    Meek, T.T.; Blake, R.D.

    1985-04-03

    A fracture-resistant, fiber-reinforced ceramic substrate is produced by a method which involves preparing a ceramic precursor mixture comprising glass material, a coupling agent, and resilient fibers, and then exposing the mixture to microwave energy. The microwave field orients the fibers in the resulting ceramic material in a desired pattern wherein heat later generated in or on the substrate can be dissipated in a desired geometric pattern parallel to the fiber pattern. Additionally, the shunt capacitance of the fracture-resistant, fiber-reinforced ceramic substrate is lower which provides for a quicker transit time for electronic pulses in any conducting pathway etched into the ceramic substrate.

  13. Surface treatment of ceramic articles

    DOEpatents

    Komvopoulos, K.; Brown, I.G.; Wei, B.; Anders, S.; Anders, A.; Bhatia, C.S.

    1998-12-22

    A process is disclosed for producing an article with improved ceramic surface properties including providing an article having a ceramic surface, and placing the article onto a conductive substrate holder in a hermetic enclosure. Thereafter a low pressure ambient is provided in the hermetic enclosure. A plasma including ions of solid materials is produced the ceramic surface of the article being at least partially immersed in a macroparticle free region of the plasma. While the article is immersed in the macroparticle free region, a bias of the substrate holder is biased between a low voltage at which material from the plasma condenses on the surface of the article and a high negative voltage at which ions from the plasma are implanted into the article. 15 figs.

  14. Surface treatment of ceramic articles

    DOEpatents

    Komvopoulos, Kyriakos; Brown, Ian G.; Wei, Bo; Anders, Simone; Anders, Andre; Bhatia, C. Singh

    1998-01-01

    A process for producing an article with improved ceramic surface properties including providing an article having a ceramic surface, and placing the article onto a conductive substrate holder in a hermetic enclosure. Thereafter a low pressure ambient is provided in the hermetic enclosure. A plasma including ions of solid materials is produced the ceramic surface of the article being at least partially immersed in a macroparticle free region of the plasma. While the article is immersed in the macroparticle free region, a bias of the substrate holder is biased between a low voltage at which material from the plasma condenses on the surface of the article and a high negative voltage at which ions from the plasma are implanted into the article.

  15. Ceramic Powders

    NASA Technical Reports Server (NTRS)

    1984-01-01

    In developing its product line of specialty ceramic powders and related products for government and industrial customers, including companies in the oil, automotive, electronics and nuclear industries, Advanced Refractory Technologies sought technical assistance from NERAC, Inc. in specific areas of ceramic materials and silicon technology, and for assistance in identifying possible applications of these materials in government programs and in the automotive and electronics industry. NERAC conducted a computerized search of several data bases and provided extensive information in the subject areas requested. NERAC's assistance resulted in transfer of technologies that helped ART staff develop a unique method for manufacture of ceramic materials to precise customer specifications.

  16. High-temperature corrosion resistance of ceramics and ceramic coatings

    SciTech Connect

    Tortorelli, P.F.

    1996-06-01

    Ceramics and ceramic composites offer the potential to operate fossil energy systems at the higher temperatures necessary for improved energy efficiency and better environmental control. However, because many fossil fuel-derived processes contain sulfur, chlorine, and carbon, as well as oxygen, degradation from high-temperature corrosion and environmental effects arising from reactions of solids with gases and condensable products is a common life-determining factor in operating systems. Ceramic-based products are not immune to such degradation; adequate corrosion resistance must be assured to exploit the technical and economic potential of such materials. This is normally accomplished by using stable, sound oxides that exist in their bulk form, that naturally grow as surface layers upon exposure to an oxidizing environment, or that are deposited as a coating on a susceptible material. It is therefore important to examine the critical issues with respect to more environmental stability of ceramics that have the potential to be corrosion resistant in particular fossil environments. Key aspects include not only chemical compatibility, but the influence of the environment on the mechanical behavior of the ceramic materials. In addition, for coatings, the mechanical reliability of the ceramic is a key issue in that an otherwise corrosion-resistant surface layer must remain sound and adherent in order to provide protection to the underlying substrate. The purpose of this work is to support the development of advanced ceramics and ceramic composites for applications in fossil environments by examining critical issues related to high-temperature corrosion resistance. More specifically, the overall objective of this task is to examine the chemical compatibility and reliability of potentially corrosion-resistant ceramics being developed as protective overcoats and/or structural materials as parts of other work elements funded by the AR&TD Program.

  17. Processing ceramics

    NASA Technical Reports Server (NTRS)

    Moritoki, M.; Fujikawa, T.; Miyanaga, J.

    1984-01-01

    A method of hot hydrostatic pressing of ceramics is described. A detailed description of the invention is given. The invention is explained through an example, and a figure illustrates the temperature and pressure during the hot hydrostatic pressing treatment.

  18. Possible efficient p-type doping of AlN using Be: An ab initio study

    NASA Astrophysics Data System (ADS)

    Wu, R. Q.; Shen, L.; Yang, M.; Sha, Z. D.; Cai, Y. Q.; Feng, Y. P.; Huang, Z. G.; Wu, Q. Y.

    2007-10-01

    Spin density functional theory based ab initio study is carried out to investigate the feasibility of fabricating p-type AlN using Be as an efficient dopant. It is found that substitutional BeAl is an acceptor with an activation energy of 0.34eV. To overcome the low solubility of direct incorporation of Be into AlN and self-compensation from Be interstitials, we propose a hydrogen-assisted growth scheme which improves the solubility and suppresses interstitials. Oxygen is also found to be an effective codopant to activate Be in AlN. Our results suggest the possibility of improving p-type conductivity of AlN by Be doping.

  19. Structural and interface properties of an AlN diamond ultraviolet light emitting diode

    SciTech Connect

    Miskys, C.R.; Garrido, J.A.; Hermann, M.; Eickhoff, M.; Nebel, C.E.; Stutzmann, M.; Vogg, G.

    2004-10-25

    Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[1010] AlN{sup I} parallel (100)[011] diamond for the predominant AlN domain (type I) and (0001)[1210] AlN{sup II} parallel (100)[011] diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a n-AlN/p-diamond diode was determined as 1.15 V. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was confirmed to originate at the heterojunction interface, and is most probably due to a defect center.

  20. Thermodynamic aspects of carbon incorporation into AlN epitaxial layers grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Leitner, J.; Stejskal, J.; Sofer, Z.

    2005-05-01

    Thermodynamic aspects of carbon incorporation into AlN during the MOVPE growth are discussed. Under low potential in the gaseous phase, carbon dissolves in AlN substituting nitrogen atoms. A sublattice model has been proposed to describe the thermodynamic behavior of this pseudobinary solution AlN-C. When carbon potential increases, solid graphite is formed simultaneously to AlN. At V/III input ratio (V/III = x/x) lower than one, carbonitride Al5C3N as well carbide Al4C3 can be formed. The calculated results are compared with the composition of AlN layers growth by MOVPE. The serious discrepancies exist which can be explained by the crude nature of the solution model as well as by non-equilibrium conditions during the MOVPE growth and subsequent carbon supersaturation of the resulting layers.

  1. Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

    NASA Astrophysics Data System (ADS)

    Jiménez, A.; Bougrioua, Z.; Tirado, J. M.; Braña, A. F.; Calleja, E.; Muñoz, E.; Moerman, I.

    2003-06-01

    This work reports on the effects of AlN interlayers embedded into the GaN semi-insulating buffer of AlGaN/GaN high electron mobility transistors, in comparison with standard heterostructures without AlN interlayers. Detailed optical and structural characterization data are presented, along with computer simulation results. The AlN interlayers generate a compressive strain in the GaN topmost layer, which slightly reduces the total polarization field, but most important, it prevents the AlGaN barrier from plastic relaxation. The final result is an enhanced polarization field with respect to standard heterostructures, providing an increased channel carrier density and pinch-off voltage. Electrical characterization confirms the advantages of using AlN interlayers, reaching maximum drain current density and extrinsic transconductance as high as 1.4 A/mm and 266 mS/mm, respectively, for 0.2-μm gate length.

  2. Optical and magnetic measurements of Mn+-implanted AlN

    NASA Astrophysics Data System (ADS)

    Li, M. K.; Li, C. B.; Liu, C. S.; Fan, X. J.; Fu, D. J.; Shon, Y.; Kang, T. W.

    2004-01-01

    AlN films were prepared by medium-frequency reactive magnetron sputtering and subsequently implanted with 200 keV Mn+ ions with a dose of 5×1016cm-2. The properties of Mn+-implanted AlN films were investigated by optical and magnetic measurements. Cathodoluminescence (CL) measurements showed a peak at 2.07 eV in AlN and a broad luminescence band around 2.0-3.4 eV in the implanted samples. Fitting of the CL data reveals three peaks, among which the main peak is located at 2.6 eV and attributed to a donor-to-Mn2+ transition. The magnetic measurement showed a transition temperature of 100 K in the implanted AlN annealed at 500 °C for 30 min. Clear ferromagnetic hysteresis was observed at 77 K, with a coercive field of 212.7 Oe.

  3. Comparative research of plasma-assisted milling and traditional milling in synthesizing AlN

    NASA Astrophysics Data System (ADS)

    Wang, Sen; Wang, Wenchun; Liu, Zhijie; Yang, Dezheng

    2017-06-01

    In this paper, traditional milling and discharge plasma-assisted milling are employed to synthesize aluminum nitride (AlN) powder at nanometer scale by milling the mixture of aluminum and lithium hydroxide monohydrate. AlN powders can be generated in traditional milling and plasma-assisted milling in an hour milling time. Differential thermal analysis curves show that the reaction temperature of the powders treated by plasma-assisted milling is lower than that of traditional milling. These results indicate that plasma-assisted milling has higher efficiency in the synthesis of AlN, getting smaller crystallite size and activating powder. Moreover, an optical emission spectrum is employed to demonstrate the active species in plasma. The different formation process of AlN in the two-milling process, and the promotion effects of plasma in the milling process are discussed.

  4. The Oxidation of AlN in Dry and Wet Oxygen

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth; Humphrey, Donald; Jacobson, Nathan; Yoshio, Tetsuo; Oda, Kohei

    1998-01-01

    The oxidation kinetics of AlN containing 3.5 wt% Y2O3 were studied by thermogravimetric analysis in dry oxygen and 10% H2O/balance oxygen at temperatures between 1000 and 1200 C for times between 48 and 100 h. The oxidation kinetics for AlN in dry oxygen were parabolic and of approximately the same magnitude and temperature dependence as other alumina forming materials. In this case, diffusion of oxygen and/or aluminum through the alumina scale is the rate limiting mechanism. The oxidation kinetics for AlN in wet oxygen were nearly linear and much more rapid than rates observed in dry oxygen. Numerous micropores were observed in the alumina formed on AIN in wet oxygen. These pores provide a fast path for oxygen transport. The linear kinetics observed in this case suggest that the interface reaction rate of AlN with wet oxygen is the oxidation rate limiting step.

  5. Structural ceramics

    NASA Technical Reports Server (NTRS)

    Craig, Douglas F.

    1992-01-01

    This presentation gives a brief history of the field of materials sciences and goes on to expound the advantages of the fastest growing area in that field, namely ceramics. Since ceramics are moving to fill the demand for lighter, stronger, more corrosion resistant materials, advancements will rely more on processing and modeling from the atomic scale up which is made possible by advanced analytical, computer, and processing techniques. All information is presented in viewgraph format.

  6. Ceramic composite coating

    DOEpatents

    Wicks, George G.

    1997-01-01

    A thin, room-temperature-curing, ceramic composite for coating and patching etal substrates comprises a sol gel silica glass matrix filled with finely ground particles or fibers, preferably alumina. The sol gel glass is made by adding ethanol to water to form a first mixture, then separately adding ethanol to tetraethyl orthosilicate to form a second mixture, then slowly adding the first to the second mixture to make a third mixture, and making a slurry by adding the finely ground particles or fibers to the third mixture. The composite can be applied by spraying, brushing or trowelling. If applied to patch fine cracks, densification of the ceramic composite may be obtained to enhance sealing by applying heat during curing.

  7. Ceramic composite coating

    DOEpatents

    Wicks, G.G.

    1997-01-21

    A thin, room-temperature-curing, ceramic composite for coating and patching metal substrates comprises a sol gel silica glass matrix filled with finely ground particles or fibers, preferably alumina. The sol gel glass is made by adding ethanol to water to form a first mixture, then separately adding ethanol to tetraethyl orthosilicate to form a second mixture, then slowly adding the first to the second mixture to make a third mixture, and making a slurry by adding the finely ground particles or fibers to the third mixture. The composite can be applied by spraying, brushing or trowelling. If applied to patch fine cracks, densification of the ceramic composite may be obtained to enhance sealing by applying heat during curing.

  8. Correlation of compressive stress with spalling of plasma sprayed ceramic materials

    NASA Technical Reports Server (NTRS)

    Mullen, R. L.; Mcdonald, G.; Hendricks, R. C.; Hofle, M. M.

    1983-01-01

    Ceramics on metal substrates for potential use as high temperature seals or other applications are exposed to forces originating from differences in thermal expansion between the ceramic and the metal substrate. This report develops a relationship between the difference in expansion of the ceramic and the substrate, defines conditions under which shear between the ceramic and the substrate occurs, and those under which bending forces are produced in the ceramic. The off-axis effect of compression forces resulting from high temperature plastic flow of the ceramic producing buckling of the ceramic is developed. Shear is associated with the edge or boundary stresses on the component while bending is associated with the distortion of an interior region. Both modes are significant in predicting life of the ceramic.

  9. Correlation of compressive and shear stress with spalling of plasma-sprayed ceramic materials

    NASA Technical Reports Server (NTRS)

    Mullen, R. L.; Mcdonald, G.; Hendricks, R. C.; Hofle, M. M.

    1983-01-01

    Ceramics on metal substrates for potential use as high temperature seals or other applications are exposed to forces originating from differences in thermal expansion between the ceramic and the metal substrate. This report develops a relationship between the difference in expansion of the ceramic and the substrate, defines conditions under which shear between the ceramic and the substrate occurs, and those under which bending forces are produced in the ceramic. The off-axis effect of compression forces resulting from high temperature plastic flow of the ceramic producing buckling of the ceramic is developed. Shear is associated with the edge or boundary stresses on the component while bending is associated with the distortion of an interior region. Both modes are significant in predicting life of the ceramic. Previously announced in STAR as N83-27016

  10. Controlled synthesis of ultra-long AlN nanowires in different densities and in situ investigation of the physical properties of an individual AlN nanowire.

    PubMed

    Liu, Fei; Su, Z J; Mo, F Y; Li, Li; Chen, Z S; Liu, Q R; Chen, J; Deng, S Z; Xu, N S

    2011-02-01

    The controlled synthesis of different growth densities of ultra-long AlN nanowires has been successfully realized by nitridation of Al powders for the first time. These AlN nanowires have an average diameter of about 100 nm and their mean length is over 50 μm. All the synthesized ultra-long nanowires are pure single crystalline h-AlN structures with a growth orientation of [0001]. We preferred the self-catalyzing vapor-liquid-solid (VLS) mechanism to illustrate their growth process. Although the sample with the middle growth density (3.2×10(7) per cm2) of AlN nanowire performs the best field emission (FE) properties, the emission uniformity is not good enough for field emission display applications, which may be attributed to their low intrinsic conductivity. Moreover, the electrical transport and FE properties of an individual ultra-long AlN nanowire are further investigated in situ to find the decisive factor responsible for their FE behaviors. An individual AlN nanowire is observed to have a mean 1 nA field of 440 V μm(-1) and 1 μA field of 480 V μm(-1) as well as an average electrical conductivity of about 2.7×10(-4)Ω(-1) cm(-1), which is lower than that of some cathode materials with excellent FE properties. Therefore we come to the conclusion that the electrical conductivity of the AlN nanowire must be improved to a higher level by some effective ways in order to realize their practical FE device applications.

  11. Hexagonal AlN: Dimensional-crossover-driven band-gap transition

    NASA Astrophysics Data System (ADS)

    Bacaksiz, C.; Sahin, H.; Ozaydin, H. D.; Horzum, S.; Senger, R. T.; Peeters, F. M.

    2015-02-01

    Motivated by a recent experiment that reported the successful synthesis of hexagonal (h ) AlN [Tsipas et al., Appl. Phys. Lett. 103, 251605 (2013), 10.1063/1.4851239], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h -AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h -AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm-1 and an Eg mode at 703 cm-1, which are observable by Raman measurements. In addition, single-layer h -AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, A A' -type stacking is found to be the most favorable one, and interlayer interaction is strong. While N -layered h -AlN is an indirect-band-gap semiconductor for N =1 -9 , we predict that thicker structures (N ≥10 ) have a direct band gap at the Γ point. The number-of-layer-dependent band-gap transitions in h -AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.

  12. Flexible-CMOS and biocompatible piezoelectric AlN material for MEMS applications

    NASA Astrophysics Data System (ADS)

    Jackson, Nathan; Keeney, Lynette; Mathewson, Alan

    2013-11-01

    The development of a CMOS compatible flexible piezoelectric material is desired for numerous applications and in particular for biomedical MEMS devices. Aluminum nitride (AlN) is the most commonly used CMOS compatible piezoelectric material, which is typically deposited on Si in order to enhance the c-axis (002) crystal orientation which gives AlN its high piezoelectric properties. This paper reports on the successful deposition of AlN on polyimide (PI-2611) material. The AlN deposited has a FWHM (002) value of 5.1° and a piezoelectric d33 value of 1.12 pm V-1, and SEM images show high quality columnar grains. The highly crystalline AlN material is due to the semi-crystalline properties of the polyimide film used. Cytotoxicity testing showed the AlN/polyimide material to be non-toxic to 3T3 cells and primary neurons. Surface properties of the AlN/polyimide film were evaluated as they have a significant effect on the adhesion of cells to the film. The results show neurons adhering to the AlN surface. The results of this paper show the characterization of a new flexible-CMOS and biocompatible AlN/polyimide material for MEMS devices with improved crystallinity and piezoelectric properties.

  13. Structural Ceramics Database

    National Institute of Standards and Technology Data Gateway

    SRD 30 NIST Structural Ceramics Database (Web, free access)   The NIST Structural Ceramics Database (WebSCD) provides evaluated materials property data for a wide range of advanced ceramics known variously as structural ceramics, engineering ceramics, and fine ceramics.

  14. PVT growth of AlN single crystals with the diameter from nano- to centi-meter level

    NASA Astrophysics Data System (ADS)

    Wu, H.; Zheng, R.; Guo, Y.; Sun, Z.

    2017-06-01

    Physical vapor transport (PVT) is the most successful and widely used approach for bulk aluminum nitride (AlN) single crystals. During the process of PVT growing AlN crystals, crucible materials, the growth setup, and the growth parameters (e.g., temperature distribution, growth pressure) are crucial. This work proposes a detailed study on the PVT growth of single AlN crystals with sizes ranging from nanometers to centimeters. AlN crystals with different sizes are grown by spontaneous nucleation. Furthermore, it discusses and contrasts the growth conditions and mechanisms of AlN crystals with different sizes. The structural and optical properties of the AlN crystals are also involved.

  15. Top-Coating Silicon Onto Ceramic

    NASA Technical Reports Server (NTRS)

    Heaps, J. D.; Nelson, L. D.; Zook, J. D.

    1985-01-01

    Polycrystalline silicon for solar cells produced at low cost. Molten silicon poured from quartz trough onto moving carbon-coated ceramic substrate. Doctor blade spreads liquid silicon evenly over substrate. Molten material solidifies to form sheet of polycrystalline silicon having photovoltaic conversion efficiency greater than 10 percent. Method produces 100-um-thick silicon coatings at speed 0.15 centimeter per second.

  16. Top-Coating Silicon Onto Ceramic

    NASA Technical Reports Server (NTRS)

    Heaps, J. D.; Nelson, L. D.; Zook, J. D.

    1985-01-01

    Polycrystalline silicon for solar cells produced at low cost. Molten silicon poured from quartz trough onto moving carbon-coated ceramic substrate. Doctor blade spreads liquid silicon evenly over substrate. Molten material solidifies to form sheet of polycrystalline silicon having photovoltaic conversion efficiency greater than 10 percent. Method produces 100-um-thick silicon coatings at speed 0.15 centimeter per second.

  17. AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties

    NASA Astrophysics Data System (ADS)

    Cappelli, E.; Trucchi, D. M.; Orlando, S.; Valentini, V.; Mezzi, A.; Kaciulis, S.

    2014-02-01

    Aluminium nitride thin films were deposited on n-Si <100> substrates by RF plasma activated reactive pulsed laser deposition (PLD). An ArF excimer pulsed laser, 10 Hz and 2.5 J/cm2 energy fluence, has been used to ablate a pure Al target in a reactive atmosphere of N2 plasma (generated by a RF source), at varying processing parameters (substrate temperature, time, and N2 plasma configuration). We studied the dependence and correlation of structural and electronic properties with the experimental conditions. The chemical composition of deposited material has been determined by both Raman and X-ray photoelectron spectroscopy (XPS). Electrical resistivity has been evaluated by the sheet resistance method. Both spectroscopic characterizations (Raman and XPS) show a strong dependence in the formation of AlN on the deposition temperature. At low temperatures, there is little formation of nitride, with a prevalence of aluminium oxide, while at higher temperatures the N uptake increases, with AlN formation. Raman analysis also highlights the formation of nano-structures, for temperatures ≥400∘C. These material characteristics have a fundamental influence on the electronic properties. Indeed, electrical resistivity properties have been found to be strongly dependent on the film structure, nitrogen incorporation, and presence of mixed oxide compounds, closely related to deposition temperature.

  18. Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

    SciTech Connect

    Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.; Cusco, R.; Artus, L.; Novikov, S. V.; Foxon, C. T.; Calleja, E.

    2008-08-01

    We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared results with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.

  19. Ceramic superconducting components

    NASA Technical Reports Server (NTRS)

    Haertling, G. H.

    1991-01-01

    An approach to the application of high-Tc ceramic superconductors to practical circuit elements was developed and demonstrated. This method, known as the rigid conductor process (RCP), involves the mounting of a preformed, sintered, and tested superconductor material onto an appropriate, rigid substrate with an epoxy adhesive which also serves to encapsulate the element from the ambient environment. Circuit elements such as straight conductors, coils and connectors were fabricated from YBa2Cu3O(7-x) superconducting material. Performance results are included for a low-noise low-thermal-conductivity superconducting grounding link for NASA.

  20. Ceramic superconducting components

    NASA Technical Reports Server (NTRS)

    Haertling, G. H.

    1991-01-01

    An approach to the application of high-Tc ceramic superconductors to practical circuit elements was developed and demonstrated. This method, known as the rigid conductor process (RCP), involves the mounting of a preformed, sintered, and tested superconductor material onto an appropriate, rigid substrate with an epoxy adhesive which also serves to encapsulate the element from the ambient environment. Circuit elements such as straight conductors, coils and connectors were fabricated from YBa2Cu3O(7-x) superconducting material. Performance results are included for a low-noise low-thermal-conductivity superconducting grounding link for NASA.

  1. Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates

    NASA Astrophysics Data System (ADS)

    Narita, S.; Meguro, K.; Takami, T.; Enta, Y.; Nakazawa, H.

    2017-02-01

    We have grown aluminum nitride (AlN) films on Si(110) substrates by pulsed laser deposition (PLD), and investigated the effects of laser power on the crystallinity and surface morphology of the AlN films. First, we epitaxially grew a fairly flat, high-quality AlN film, which contained no rotation domains, onto the Si(110) substrate in a well-lattice-matched relationship. Secondly, we formed a SiC interfacial buffer layer on the AlN film to grow a high-quality 3C-SiC film on the SiC buffer layer by PLD, which gave rise to a 3C-SiC(111)3×3 surface. The root-mean-square-roughness value of the SiC film was smaller than the previously reported values of SiC/AlN multilayers on Si(100) and Si(111) substrates. Thirdly, we grew graphene by annealing the SiC film at a high temperature in an ultra-high vacuum. It was demonstrated that the qualified graphene layer without rotation domains was grown on the SiC film. The formation of voids and the outdiffusion of Al and N atoms from the AlN film were successfully suppressed during the high-temperature annealing.

  2. Light emission from an m-plane n-ZnO/p-Si heterojunction with an AlN interlayer

    NASA Astrophysics Data System (ADS)

    Chen, Chao; Wang, Ti; Xu, Yang; Ai, Zhiwei

    2017-01-01

    Nonpolar m-plane n-ZnO/p-Si heterojunction light-emitting devices with and without an AlN intermediate layer were fabricated by atomic layer deposition. The energy band alignment of the ZnO/AlN/Si heterostructure was studied using X-ray photoelectron spectroscopy, and the result confirmed the electron-blocking ability of the AlN interlayer. Electroluminescence results revealed that the devices with the AlN intermediate layer emit a quasi-white light. This work indicates that the AlN intermediate layer can effectively improve the performance of n-ZnO/p-Si heterojunction light-emitting devices.

  3. First-principles study on stability, and growth strategies of small AlnZr (n=1-9) clusters

    NASA Astrophysics Data System (ADS)

    Li, Zhi; Zhou, Zhonghao; Wang, Hongbin; Li, Shengli; Zhao, Zhen

    2016-09-01

    The geometries, relative stability as well as growth strategies of the AlnZr (n=1-9) clusters are investigated with spin polarized density functional theory: BLYP. The results reveal that the AlnZr clusters are more likely to form the dense accumulation structures than the AlN (N=1-10) clusters. The average binding energies of AlnZr are higher than those of AlN clusters. The AlnZr (n=3, 5, and 7) clusters are more stable than others by the differences of the total binding energies. Mülliken population analysis for the AlnZr clusters shows that the electron's adsorption ability of Zr is slightly lower than that of Al except for AlZr cluster. Local peaks of the HOMO-LUMO gap curve are found at n=3, 5, and 7. The reaction energies of AlnZr are higher, which means that AlnZr clusters are easier to react with Al clusters. Zr atom preferential reacts with Al2 cluster. Local peaks of the magnetic dipole moments are found at n=2, 5, and 8.

  4. Vacuum brazing ceramics to metals

    SciTech Connect

    Mizuhara, H.

    1987-02-01

    Attention is given to the use in ceramic/metal joint brazing alloy of silver-copper composition that incorporates 2 percent Ti. This alloy allows one-step brazing, and wets superalloys and stainless steels without prior Ni plating of the substrate. Another alloy consisting of Ag-Cu-In-Ti has been developed which alloys at lower temperatures and allows step-brazing when used with Ag-Cu-Ti alloy. If the thermal expansion difference between metal and ceramic is large, brazing with a graded seal may be used; this minimizes joint stresses upon cooling to room temperature.

  5. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

    SciTech Connect

    Inoue, Shin-ichiro; Naoki, Tamari; Kinoshita, Toru; Obata, Toshiyuki; Yanagi, Hiroyuki

    2015-03-30

    Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

  6. Metal-ceramic junctions - Mechanical and physicochemical interactive joining techniques

    NASA Astrophysics Data System (ADS)

    Lascar, Guy

    Reactive brazing and thermocompression are discussed in terms of their use as joining techniques for metal-ceramic structures. Theoretical consideration is given to brazing under vacuum conditions to examine the relationships between contact surface and volume, interfacial energy, surface energy, and adhesion energy. Brazing is shown to permit metal-ceramic junctions without metallization of the ceramic substrate, although several reactions and metallic materials can affect joint strength. Thermocompression is distinguished from brazing and shown to limit the alteration of the ceramic material. The protection of the mechanical properties of the ceramic and metal components of the materials is a critical aspect of industrial applications of brazing and thermocompression.

  7. Dynamic measurements of actuators driven by AlN layers

    NASA Astrophysics Data System (ADS)

    Kacperski, Jacek; Kujawinska, Malgorzata; Leon, Sergio Camacho; Nieradko, Lukasz; Jozwik, Michal; Gorecki, Christophe

    2005-09-01

    Micro-Electro-Mechanical Systems are nowadays frequently used in many fields of industry. The number of their applications increase and their functions became more complex and demanding. Therefore precise knowledge about their static (shape, deformations, stresses) and dynamic (resonance frequencies, amplitude and phase of vibration) properties is necessary. Two beam laser interferometry is one of the most popular testing methods of micromechanical elements as a non-contact, high-accurate method allowing full-field measurement. First part of the paper present microbeam actuators designed for MEMS/MOEMS applications. The proposed structures are the straight silicon microbeams formed by KOH etching of Si wafer. Aluminium nitride (AlN) thin films are promising materials for many acoustic and optic applications in MEMS field. In the proposed architecture the actuation layer is sandwiched between two metal electrodes on the top of beam. In the second part we describe the methodology of the actuator characterization. These methods applied are: stroboscopic interferometry and active interferometry (LCOS SLM is used as a reference surface in Twyman-Green interferometer). Moreover some results of FEM analysis of the sample are shown and compared with experimental results. Dynamic measurements validate the design and simulations, and provide information for optimization of the actuator manufacturing process.

  8. Electronic structures, elastic properties, and minimum thermal conductivities of cermet M{sub 3}AlN

    SciTech Connect

    Wang, Jin; Chen, ZhiQian; Li, ChunMei; Li, Feng; Nie, ChaoYin

    2014-08-15

    The electronic structures and elastic anisotropies of cubic Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN are investigated by pseudopotential plane-wave method based on density functional theory. At the Fermi level, the electronic structures of these compounds are successive with no energy gap between conduct and valence bands, and exhibit metallicity in ground states. In valence band of each partial density of states, the different orbital electrons indicate interaction of corresponding atoms. In addition, the anisotropy of Hf{sub 3}AlN is found to be significantly different from that of Ti{sub 3}AlN and Zr{sub 3}AlN, which involve the differences in the bonding strength. It is notable that Hf{sub 3}AlN is a desired thermal barrier material with the lowest thermal conductivity at high temperature among the three compounds. - Graphical abstract: 1.Young's moduli of anti-perovskite Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN in full space. 2.Electron density differences on crystal planes (1 0 0), (2 0 0), and (1 1 0) of anti-perovskite Zr{sub 3}AlN. - Highlights: • We calculated three anti-perovskite cermets with first-principles theory. • We illustrated 3D Young modulus and found the anomalous anisotropy. • We explained the anomaly and calculated the minimum thermal conductivities.

  9. Adhesion, friction and micromechanical properties of ceramics

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1988-01-01

    The adhesion, friction, and micromechanical properties of ceramics, both in monolithic and coating form, are reviewed. Ceramics are examined in contact with themselves, other harder materials, and metals. For the simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. The first part discusses the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces. The role of chemical bonding in adhesion and friction, and the effects of surface contaminant films and temperature on tribological response with respect to adhesion and friction are discussed. The second part deals with abrasion of ceramics. Elastic, plastic, and fracture behavior of ceramics in solid state contact is discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of ceramic deposited on substrates is also addressed.

  10. Recent developments in glass-ceramic materials

    SciTech Connect

    Beall, G.H.

    1993-12-31

    Glass-ceramic materials can be made by sintering and crystallization of fine glass powders or by internal nucleation and crystallization of formed glass articles. In both cases, the final properties are controlled by phase assemblage and microstructure. Transparent glass-ceramics based upon ultra-fine grained {beta}-quartz solid solution have been developed with near-zero thermal expansion coefficient for a variety of consumer and technical products: cookware, stove-tops, telescope mirrors, optical gyroscopes. Fluormica glass-ceramics with a {open_quotes}house-of-cards{close_quotes} microstructure are easily machined and have found wide application in vacuum systems, precision dielectric components, insulators, and medical and dental prostheses. Acicular chain silicate glass-ceramics are strong and tough, and have recently been developed as high performance tableware and magnetic memory disk substrates. Sintered glass-ceramics based on magnesium aluminosilicate frits are the basis of copper-cordierite packaging for advanced IC packaging.

  11. Ceramic Seal.

    SciTech Connect

    Smartt, Heidi A.; Romero, Juan A.; Custer, Joyce Olsen; Hymel, Ross W.; Krementz, Dan; Gobin, Derek; Harpring, Larry; Martinez-Rodriguez, Michael; Varble, Don; DiMaio, Jeff; Hudson, Stephen

    2016-11-01

    Containment/Surveillance (C/S) measures are critical to any verification regime in order to maintain Continuity of Knowledge (CoK). The Ceramic Seal project is research into the next generation technologies to advance C/S, in particular improving security and efficiency. The Ceramic Seal is a small form factor loop seal with improved tamper-indication including a frangible seal body, tamper planes, external coatings, and electronic monitoring of the seal body integrity. It improves efficiency through a self-securing wire and in-situ verification with a handheld reader. Sandia National Laboratories (SNL) and Savannah River National Laboratory (SRNL), under sponsorship from the U.S. National Nuclear Security Administration (NNSA) Office of Defense Nuclear Nonproliferation Research and Development (DNN R&D), have previously designed and have now fabricated and tested Ceramic Seals. Tests have occurred at both SNL and SRNL, with different types of tests occurring at each facility. This interim report will describe the Ceramic Seal prototype, the design and development of a handheld standalone reader and an interface to a data acquisition system, fabrication of the seals, and results of initial testing.

  12. Electro-acoustic sensors based on AlN thin film: possibilities and limitations

    NASA Astrophysics Data System (ADS)

    Wingqvist, Gunilla

    2011-06-01

    The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device - the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the ScxAl1-xN (0

  13. The Electronic Properties of AlN Tunnel Barriers and the Effect of Oxygen Impurities

    NASA Astrophysics Data System (ADS)

    Li, Yun; Read, John; Huang, Pinshane; Tseng, Hsin-Wei; Buhrman, Robert

    2009-03-01

    The use of ultra-thin aluminum nitride (AlN) barrier layers can result in Josephson Junctions (JJ's) with both very high critical current densities and low sub-gap leakage [1-4], demonstrating that AlN is a superior JJ tunnel barrier material in the ultra-thin barrier limit. We have utilized scanning tunneling spectroscopy (STS) and analytical scanning transmission electron microscopy (STEM) with electron energy-loss spectroscopy (EELS) to investigate thin AlN layers formed on Nb/Al bilayers by treating the Al surface with an atomic nitrogen beam. Under optimum nitridation conditions the resultant ˜1nm AlN barrier layers have small, ˜ 1 eV, but well defined band gaps and stable surfaces in UHV, with the absence of band-tail states extending close to the Fermi energy, which is in sharp contrast to the case for AlOx layers formed by thermal oxidation [5]. The AlN barrier layers are however quite sensitive to even low levels of background oxygen (O) exposure, either during or after the nitridation process, which reacts O into the barrier layer and results in the formation of low energy band-tail states and an unstable surface. [1] Zijlstra et al., APL 91, 233102 (2007); [2] Wang et al., APL 64, 2034 (1994); [3] Kleinsasser et al., IEEE TAS 5, 2318 (1995); [4] Kaul et al., JMRS 20, 3047 (2005); [5] Mather et al., APL 86, 242504 (2005)

  14. High-efficiency MOSFET bridge rectifier for AlN MEMS cantilever vibration energy harvester

    NASA Astrophysics Data System (ADS)

    Takei, Ryohei; Okada, Hironao; Noda, Daiji; Ohta, Ryo; Takeshita, Toshihiro; Itoh, Toshihiro; Kobayashi, Takeishi

    2017-04-01

    We developed a high-efficiency MOSFET bridge rectifier for use in an aluminum nitride (AlN) piezoelectric MEMS cantilever vibration energy harvester (VEH). The bridge rectifier consists of four MOSFETs with a circuit configuration similar to that of a typical diode bridge rectifier. The output voltage of the full-wave rectification via the MOSFET bridge was simulated with an equivalent circuit model of the AlN VEH, which is extracted from an experimental result. The channel width of the MOSFET was designed to be adopted for use with a high-voltage and low-current AlN VEH. The designed rectifier was fabricated using the 0.18 µm high voltage technology of a commercially available CMOS foundry. The AlN VEH with our bridge rectifier generated a DC power of 0.514 µW at 2.49 V under an applied vibration with an acceleration amplitude of 0.5 m/s2 at a frequency of 46.6 Hz. The DC power is 1.4 times higher than that generated by the same AlN VEH with a MOSFET bridge consisting of commercially available discrete MOSFETs.

  15. Reconstructions and origin of surface states on AlN polar and nonpolar surfaces

    NASA Astrophysics Data System (ADS)

    Miao, M. S.; Janotti, A.; van de Walle, C. G.

    2009-10-01

    The AlN (0001), (0001¯) , (101¯0) , and (112¯0) surfaces and their electronic structures are studied based on density-functional theory using the generalized gradient approximation as well as the hybrid functional approach. The stable reconstructions generally satisfy the electron-counting rule, except for cases where Al adlayers are present. We find that the transitions between different reconstructions exhibit a distinct trend for group-III nitrides. For all surfaces, Al dangling-bond states tend to be close to the conduction-band minimum (CBM) and N dangling-bond states close to the valence-band maximum (VBM). Al-N bonding states also occur near the VBM, while Al-Al bonding states occur in the middle of the gap. We find that Al dangling-bond states on the Al-polar (0001) surface can pin the Fermi level of n -type AlN at 1.0 eV below the CBM at moderate Al/N growth ratios. At high Al/N ratios, metallic Al adlayers form which pin the Fermi level in the middle of the gap. The lack of a surface donor state in the upper part of the gap suggests that the surface states on clean AlGaN surfaces are unlikely to be the source of carriers in the two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors.

  16. Structural characteristics of Ni+-implanted AlN thin film

    NASA Astrophysics Data System (ADS)

    Khan, Shakil; Husnain, G.; Ahmad, Ishaq; Khan, Karim; Usman, Muhammad; Riaz, Saira

    2014-09-01

    Metal organic chemical vapor deposited (MOCVD) thin films of aluminum nitride (AlN) were irradiated with 700 keV Ni ions at fluences of 1 × 1012, 1 × 1013, and 1 × 1014 ions cm-2. The stopping and range of ions in matter (SRIM) analysis was performed to investigate the depth distribution of the Ni ions and vacancy production in AlN film. The x-ray diffraction (XRD) patterns of the implanted samples show a shift of the AlN (0 0 2) orientation peak towards higher angles at 1 × 1012 ions cm-2, exhibiting the incorporation of nickel ions into the AlN phase. The XRD patterns also demonstrated a reduction in shift of the (0 0 2) orientation peak along with the formation of AlNi3 phase with the increase of ion fluence. The AFM surface analysis of the ion-irradiated AlN film exhibits a rise of film surface roughness. After ion irradiation, the samples were annealed at 900 °C in a nitrogen environment. Annealing reduces the surface roughness of not only the implanted samples but also the as-grown samples.

  17. Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Greenlee, Jordan D.; Gunning, Brendan; Feigelson, Boris N.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.; Kub, Francis J.; Doolittle, W. Alan

    2016-01-01

    Multicycle rapid thermal annealing (MRTA) is shown to reduce the defect density of molecular beam epitaxially grown AlN films. No damage to the AlN surface occurred after performing the MRTA process at 1520°C. However, the individual grain structure was altered, with the emergence of step edges. This change in grain structure and diffusion of AlN resulted in an improvement in the crystalline structure. The Raman E2 linewidth decreased, confirming an improvement in crystal quality. The optical band edge of the AlN maintained the expected value of 6.2 eV throughout MRTA annealing, and the band edge sharpened after MRTA annealing at increased temperatures, providing further evidence of crystalline improvement. X-ray diffraction shows a substantial improvement in the (002) and (102) rocking curve FWHM for both the 1400 and 1520°C MRTA annealing conditions compared to the as-grown films, indicating that the screw and edge type dislocation densities decreased. Overall, the MRTA post-growth annealing of AlN lowers defect density, and thus will be a key step to improving optoelectronic and power electronic devices. [Figure not available: see fulltext.

  18. Improvement of OLED properties with the AlN insulated layer

    NASA Astrophysics Data System (ADS)

    Liu, Chunling; Wang, Jin; Wang, Chunwu; Zhao, Lei; Jiang, Wenlong

    2010-11-01

    The thin aluminum nitride(AlN) film using as an insulating layer was inserted between the anode (ITO) and the NPB organic film in the organic light-emitting devices(OLED) for the structure being K9/ITO/AlN/NPB/Alq3/LiF/Al.The effect of the different thickness AlN film on the device performance was investigated. After optimization, improvement of OLEDs properties is biggest when the AlN film thickness is about 0.4nm.Such a structure with AlN layer facilitates the increase of current density and decrease of threshold voltage, resulting in an improved luminance and energy efficiency. The average luminance increased by about 30% and an improvement of 21.8% on the average current density. The lifetime experiment of the devices has proved an improvement on stability because of inserted AlN film. This phenomenon is mainly because of the insulating capability of the aluminum nitride coating and the passivation role of AlN film to the ITO surface. The processing is simple and high efficient, can be widely applied to the OLED devices.

  19. Ceramic Waveguides

    NASA Astrophysics Data System (ADS)

    Yeh, C.; Shimabukuro, F.; Stanton, P.; Jamnejad, V.; Imbriale, W.; Manshadi, F.

    2000-01-01

    This article is an expanded version of an original article published in Nature (April 6, 2000) entitled, "Millimeter/Submillimeter Wave Communications via Ceramic Ribbon." Finding a very low-loss waveguide in the millimeter-/submillimeter-wave range has been a problem of considerable interest for many years. Researching the fundamentals, we have found a new way to design a waveguide structure that is capable of providing an attenuation coefficient of less than 10 dB/km for the guided dominant mode. This structure is a ceramic (Coors' 998 alumina) ribbon with an aspect ratio of 10:1. This attenuation figure is more than one hundred times smaller than that for a typical ceramic or other dielectric circular-rod waveguide. It appears that the dominant transverse magnetic (TM)-like mode is capable of "gliding" along the surface of the ribbon with exceedingly low attenuation and with a power pattern having a dip in the core of the ribbon guide. This feature makes the ceramic ribbon a true "surface" waveguide structure wherein the wave is guided along, adhering to a large surface with only a small fraction of the power being carried within the core region of the structure. Here, through theoretical analysis as well as experimental measurements, the existence of this low-loss ceramic ribbon structure is proven. Practical considerations, such as an efficient launcher as well as supports for a long open ribbon structure, also have been tested experimentally. The availability of such a low-loss waveguide may now pave the way for new development in this millimeter-/submillimeter-wave range.

  20. Gas Separations using Ceramic Membranes

    SciTech Connect

    Paul KT Liu

    2005-01-13

    This project has been oriented toward the development of a commercially viable ceramic membrane for high temperature gas separations. A technically and commercially viable high temperature gas separation membrane and process has been developed under this project. The lab and field tests have demonstrated the operational stability, both performance and material, of the gas separation thin film, deposited upon the ceramic membrane developed. This performance reliability is built upon the ceramic membrane developed under this project as a substrate for elevated temperature operation. A comprehensive product development approach has been taken to produce an economically viable ceramic substrate, gas selective thin film and the module required to house the innovative membranes for the elevated temperature operation. Field tests have been performed to demonstrate the technical and commercial viability for (i) energy and water recovery from boiler flue gases, and (ii) hydrogen recovery from refinery waste streams using the membrane/module product developed under this project. Active commercializations effort teaming with key industrial OEMs and end users is currently underway for these applications. In addition, the gas separation membrane developed under this project has demonstrated its economical viability for the CO2 removal from subquality natural gas and landfill gas, although performance stability at the elevated temperature remains to be confirmed in the field.

  1. Magnetic behavior of CoPt-AlN granular structure laminated with AlN layers

    NASA Astrophysics Data System (ADS)

    Yu, Youxing; Shi, Ji; Nakamura, Yoshio

    2011-04-01

    The magnetic behavior of CoPt-AlN granular structure laminated with AlN layers has been studied. Ultrathin multilayer structure, [CoPt0.5 nm/AlN0.5nm]4, is used as the precursor of the magnetic layers, which are separated by 5-nm-thick AlN layers. Upon thermal annealing, the ultrathin multilayer transforms into CoPt-AlN granular structure, and the thick AlN layers remain to be spacers. When the film was annealed at 400 °C, the out-of-plane direction becomes the easy axis of magnetization, although the coercivity remains small. TEM observation has proved that CoPt shows disklike shape at such an annealing temperature. When increasing the annealing temperature to 600 °C and above, the films show "isotropic" magnetic behavior due to the formation of equiaxial CoPt particles in the magnetic layers.

  2. Wet etching and infrared absorption of AlN bulk single crystals

    NASA Astrophysics Data System (ADS)

    Weiwei, Li; Youwen, Zhao; Zhiyuan, Dong; Jun, Yang; Weijie, Hu; Jianhong, Ke

    2009-07-01

    The defects and the lattice perfection of an AlN (0001) single crystal grown by the physical vapor transport (PVT) method were investigated by wet etching, X-ray diffraction (XRD), and infrared absorption, respectively. A regular hexagonal etch pit density (EPD) of about 4000 cm-2 is observed on the (0001) Al surface of an AlN single crystal. The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. The XRD full width at half maximum (FWHM) of the single crystal is 35 arcsec, suggesting a good lattice perfection. Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm-1, respectively. These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.

  3. Formation of hexagonal AlN nanotowers and layered nanorods by direct nitridation of aluminum

    NASA Astrophysics Data System (ADS)

    Zhang, P. G.; Wang, K. Y.; Liang, Jiandong; Guo, S. M.

    2011-02-01

    Hexagonal AlN nanotowers and layered nanorods with a diameter of hundreds of nanometers and a length of several microns have been successfully synthesized by direct nitridation of aluminum and rice bran mixture compacts in a tube furnace up to 1250 °C under a flow of nitrogen without the addition of extra catalyst. The structure of the nano-AlN products was characterized by XRD and SEM. XRD pattern indicates that the conversion of Al into AlN is complete. The formation of the nanostructures is primarily due to the existence of rich trace elements in the rice bran. The importance of these trace elements and the formation of AlN nanotowers/nanorods have been discussed with the VLS/VS growth mechanisms. The unique morphology of the as-synthesized nanotowers could be useful for investigating fundamental physical phenomena and for fabricating nanodevices.

  4. Growth of AlN nanostructure on GaN using MOCVD

    SciTech Connect

    Loganathan, R.; Ramesh, R.; Jayasakthi, M.; Prabakaran, K.; Kuppulingam, B.; Sankaranarayanan, M.; Balaji, M.; Arivazhagan, P.; Singh, Subra; Baskar, K.

    2015-06-24

    Aluminum nitride (AlN) nanowalls have been epitaxially grown on dislocation assisted GaN/Al{sub 2}O{sub 3} template by metal organic chemical vapor deposition (MOCVD) without any help of metal catalysts. A large number of nanowalls with thicknesses of 1.5-2.0 µm and height 400 nm have been deposited. The AlN nanowalls were found to have a preferred c-axis oriented with a hexagonal crystal structure. The AlN nanowalls and GaN/Al{sub 2}O{sub 3} template have been characterize at room temperature photoluminescence (PL) and high resolution X-ray diffraction (HRXRD)

  5. Crystalline growth of AlN thin films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Sadeghpour, S.; Ceyssens, F.; Puers, R.

    2016-10-01

    Aluminum nitride (AlN) thin film was grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia precursors. A method was found to have crystalline thin film AlN with almost zero thickness variation and a truly one layer deposition of atoms per each cycle of the process. The growth rate saturated at ∼ 1 Å/cycle, and the thickness was proportional to the number of reaction cycles. The preferred crystal orientation, uniformity of the nucleation and the surface roughness of the grown AlN were investigated. X-ray diffraction (XRD), atomic focused microscopy (AFM) and scanning electron microscopy (SEM) were carried out to analyze the crystallinity and properties of the films.

  6. Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Mattila, P.; Bosund, M.; Huhtio, T.; Lipsanen, H.; Sopanen, M.

    2012-03-01

    Surface passivation of GaAs by ammonia plasma and AlN fabricated by plasma-enhanced atomic layer deposition are compared. It is shown that the deposition temperature can be reduced to 150 °C and effective passivation is still achieved. Samples passivated by AlN fabricated at 150 °C show four times higher photoluminescence intensity and longer time-resolved photoluminescence lifetime than ammonia plasma passivated samples. The passivation effect is shown to last for months. The dependence of charge carrier lifetime and integrated photoluminescence intensity on AlN layer thickness is studied using an exponential model to describe the tunneling probability from the near-surface quantum well to the GaAs surface.

  7. Spectral features and voltage effects in high-field electroluminescence of AlN filamentary nanocrystals

    NASA Astrophysics Data System (ADS)

    Weinstein, I. A.; Vokhmintsev, A. S.; Chaikin, D. V.; Afonin, Yu. D.

    2016-11-01

    The high-field electroluminescence (EL) spectra for Al-rich AlN nanowhiskers varying applied voltage were studied. The observed 2.70 eV emission, which can be considered as superposition of two Gaussian bands in 2.75 and 2.53 eV, was analyzed. It was shown that Fowler-Nordheim effect took place in EL mechanism with participation of capturing levels of ON- and VN-centers when AlN nanowhiskers were exposed to an external field of 2.5 ÷ 10 V/μm. Obtained results and made conclusions are in a good agreement with independent electron field emission measurements for different one-dimensional AlN nanostructures.

  8. Microwave processing of ceramics

    SciTech Connect

    Katz, J.D.

    1989-01-01

    This paper discusses the following topics on microwave processing of ceramics: Microwave-material interactions; anticipated advantage of microwave sintering; ceramic sintering; and ceramic joining. 24 refs., 4 figs. (LSP)

  9. Method for improving the performance of oxidizable ceramic materials in oxidizing environments

    NASA Technical Reports Server (NTRS)

    Nagaraj, Bangalore A. (Inventor)

    2002-01-01

    Improved adhesion of thermal barrier coatings to nonmetallic substrates using a dense layer of ceramic on an underlying nonmetallic substrate that includes at least one oxidizable component. The improved adhesion occurs because the application of the dense ceramic layer forms a diffusion barrier for oxygen. This diffusion barrier prevents the oxidizable component of the substrate from decomposing. The present invention applies ceramic by a process that deposits a relatively thick and dense ceramic layer on the underlying substrate. The formation of the dense layer of ceramic avoids the problem of void formation associated with ceramic formation by most prior art thermal decomposition processes. The formation of voids has been associated with premature spalling of thermal barrier layers and other protective layers applied to substrates.

  10. Energetics and electronic structures of AlN nanotubes/wires and their potential application as ammonia sensors.

    PubMed

    Zhou, Zhen; Zhao, Jijun; Chen, Yongsheng; Schleyer, Paul von Ragué; Chen, Zhongfang

    2007-10-24

    Aluminium nitride (AlN) one-dimensional (1D) nanostructures, including crystalline nanowires, faceted nanotubes and conventional single-walled nanotubes, were investigated by means of density functional theory (DFT) using the generalized gradient approximation (GGA). While the larger diameter crystalline nanowires are the most favoured energetically of all these 1D nanostructures, the thick faceted nanotubes have comparable binding energies and can be obtained experimentally. The single-walled nanotubes have the lowest binding energies, and are less feasible experimentally. Due to the surface states at the band edges, the band gaps of all the AlN 1D nanostructures are much smaller than that of bulk AlN. The band structures of AlN nanowires can be modified by NH(3) adsorption. Consequently AlN nanowires have potential applications as gas sensors, since their electronic structures are very sensitive to NH(3) adsorption.

  11. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

    NASA Astrophysics Data System (ADS)

    Miyake, Hideto; Lin, Chia-Hung; Tokoro, Kenta; Hiramatsu, Kazumasa

    2016-12-01

    The annealing of sputtered AlN films with different thicknesses grown on sapphire in nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were overlapped ;face-to-face; to suppress the thermal decomposition of the AlN films. The sputtered AlN films with small grains consisted of columnar structure were initially aligned with (0002) orientation but became slightly inclined with increasing film thickness resulting in the formation of a two-layer structure. After annealing, films became a single crystalline layer regardless of the film thickness, and their crystallinity markedly improved after annealing at 1600-1700 °C. The full widths at half maximum of the (0002)- and (10 1 bar2)-plane X-ray rocking curves were improved to 49 and 287 arcsec, respectively, owing to the annihilation of domain boundaries in the sputtered AlN films, which concurrently increased the compressive stress in the films.

  12. Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers

    DOE PAGES

    Yadav, S. K.; Wang, J.; Liu, X. -Y.

    2016-06-13

    An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. Furthermore, the formation of a zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamicallymore » driven process.« less

  13. Experimental Investigation on Thermoresistance between AlN, Bi-2223 and OFHC in High Tc- Direct Cooling Technology

    NASA Astrophysics Data System (ADS)

    Wang, H. L.; Rao, R. S.; Wang, J.

    2014-12-01

    In the development of high temperature superconducting (HTS) direct cooling technology, the high electric insulation high heat conducting AlN has become one of the important components. The thermal contact resistance between AlN, Bi-2223 and OFHC is investigated by experiment with a G-M cryocooler as the source of cooling. The heat conductivity of AlN is measured between 29 and 160 K temperatures. When the temperature on the interface layer side of Bi-2223 is 55 K, under the action of the contact pressure of 0.5469 MPa, the thermal contact resistance between AlN and Bi-2223 is 38.86 times to the thermal conduction resistance of a 10 mm thick AlN pad. Baced on micro-nanocryogenics, it is proposed that the thermal contact resistance is one of the crucial techniques to be attacked in HTS direct cooling technology.

  14. Thermal and electrostrictive expansion characteristics of MLC (multilayer ceramic) capacitors

    NASA Astrophysics Data System (ADS)

    Chanchani, R.; Hall, C. A.

    We have measured by strain gauge technique, in-plane thermal expansivity (coefficient of thermal expansion) as a function of temperature and electrostrictive expansion as a function of applied DC voltage for ceramic capacitors with X7R, NPO and N1500 dielectrics. Multilayer Ceramic (MLC) capacitor materials from two commercial suppliers were evaluated. Thermal expansivities of these materials were compared to polyimide-quartz boards and alumina ceramic substrates.

  15. An analysis of the pull strength behaviors of fine-pitch, flip chip solder interconnections using a Au-Pt-Pd thick film conductor on Low-Temperature, Co-fired Ceramic (LTCC) substrates.

    SciTech Connect

    Uribe, Fernando R.; Kilgo, Alice C.; Grazier, John Mark; Vianco, Paul Thomas; Zender, Gary L.; Hlava, Paul Frank; Rejent, Jerome Andrew

    2008-09-01

    The assembly of the BDYE detector requires the attachment of sixteen silicon (Si) processor dice (eight on the top side; eight on the bottom side) onto a low-temperature, co-fired ceramic (LTCC) substrate using 63Sn-37Pb (wt.%, Sn-Pb) in a double-reflow soldering process (nitrogen). There are 132 solder joints per die. The bond pads were gold-platinum-palladium (71Au-26Pt-3Pd, wt.%) thick film layers fired onto the LTCC in a post-process sequence. The pull strength and failure modes provided the quality metrics for the Sn-Pb solder joints. Pull strengths were measured in both the as-fabricated condition and after exposure to thermal cycling (-55/125 C; 15 min hold times; 20 cycles). Extremely low pull strengths--referred to as the low pull strength phenomenon--were observed intermittently throughout the product build, resulting in added program costs, schedule delays, and a long-term reliability concern for the detector. There was no statistically significant correlation between the low pull strength phenomenon and (1) the LTCC 'sub-floor' lot; (2) grit blasting the LTCC surfaces prior to the post-process steps; (3) the post-process parameters; (4) the conductor pad height (thickness); (5) the dice soldering assembly sequence; or (5) the dice pull test sequence. Formation of an intermetallic compound (IMC)/LTCC interface caused by thick film consumption during either the soldering process or by solid-state IMC formation was not directly responsible for the low-strength phenomenon. Metallographic cross sections of solder joints from dice that exhibited the low pull strength behavior, revealed the presence of a reaction layer resulting from an interaction between Sn from the molten Sn-Pb and the glassy phase at the TKN/LTCC interface. The thick film porosity did not contribute, explicitly, to the occurrence of reaction layer. Rather, the process of printing the very thin conductor pads was too sensitive to minor thixotropic changes to ink, which resulted in

  16. The effect of geometry and post-annealing on surface acoustic wave characteristics of AlN thin films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Phan, Duy-Thach; Chung, Gwiy-Sang

    2011-08-01

    This paper describes experimental relationship between surface acoustic wave (SAW) properties of two-port SAW resonators based on polycrystalline aluminum nitride (AlN) thin films grown on Si substrates by using a pulsed reactive magnetron sputtering system and their geometry's parameters. Moreover, the influence of post-deposition heat treatment on SAW properties of AlN thin films was investigated at different annealing temperature (600 °C and 900 °C). The measurement results show the number of the inter-digital transducers (IDT) finger pairs ( N), the number of reflectors grating pairs ( R) and the IDT center-to-center distance ( L) related to insertion loss of SAW resonators. The best result of insertion loss was 15.6 dB for SAW resonators with R = 160 pair, N = 5 pair and L = 750 μm. At the same geometry parameters, the SAW velocity and insertion loss were improved slightly after annealing at 600 °C and were worse for the films annealed at 900 °C by changes in the surface morphology and stress on the film.

  17. Defects at nitrogen site in electron-irradiated AlN

    SciTech Connect

    Son, N. T.; Janzen, E.; Gali, A.; Szabo, A.; Bickermann, M.; Ohshima, T.; Isoya, J.

    2011-06-13

    In high resistance AlN irradiated with 2 MeV electrons, an electron paramagnetic resonance (EPR) spectrum, labeled EI-1, with an electron spin S=1/2 and a clear hyperfine (hf) structure was observed. The hf structure was shown to be due the interaction between the electron spin and the nuclear spins of four {sup 27}A nuclei with the hf splitting varying between {approx}6.0 and {approx}7.2 mT. Comparing the hf data obtained from EPR and ab initio supercell calculations we suggest the EI-1 defect to be the best candidate for the neutral nitrogen vacancy in AlN.

  18. Competitive growth mechanisms of AlN on Si (111) by MOVPE

    PubMed Central

    Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan; Chen, Zhen; Wang, Lianshan; Kong, Susu; Zhao, Guijuan; Liu, Xianglin

    2014-01-01

    To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure. PMID:25231628

  19. Response of magnetron sputtered AlN films to controlled atmosphere annealing

    NASA Astrophysics Data System (ADS)

    Jose, Feby; Ramaseshan, R.; Dash, S.; Bera, S.; Tyagi, A. K.; Raj, Baldev

    2010-02-01

    The present investigation deals with the examination of the response of amorphous AlN films to post-deposition annealing environments such as high vacuum (HV) and nitrogen atmosphere (NA). The c/a ratio values from GIXRD for both cases are around 1.602. The XPS profile of NA-AlN shows a deficiency of nitrogen on the surface, whereas the oxygen impurity level is negligible in the case of NA compared with HV. The PL spectra substantiate the nitrogen vacancies in NA-AlN. The amorphous AlN exhibits a nanoindentation hardness of 18 GPa.

  20. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

    NASA Astrophysics Data System (ADS)

    Feng, Liang; Ping, Chen; De-Gang, Zhao; De-Sheng, Jiang; Zhi-Juan, Zhao; Zong-Shun, Liu; Jian-Jun, Zhu; Jing, Yang; Wei, Liu; Xiao-Guang, He; Xiao-Jing, Li; Xiang, Li; Shuang-Tao, Liu; Hui, Yang; Li-Qun, Zhang; Jian-Ping, Liu; Yuan-Tao, Zhang; Guo-Tong, Du

    2016-05-01

    We have investigated the electron affinity of Si-doped AlN films (N Si = 1.0 × 1018-1.0 × 1019 cm-3) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

  1. Using laser radiation for the formation of capillary structure in flat ceramic heat pipes

    NASA Astrophysics Data System (ADS)

    Nikolaenko, Yu. E.; Rotner, S. M.

    2012-12-01

    The possibility of using laser radiation with a wavelength of 1.064 μm for the formation of a capillary structure in the evaporation zone of flat ceramic heat pipes has been experimentally confirmed. Using a technological regime with established parameters, a capillary structure was formed in AlN and Al2O3 ceramic plates with a thickness of 1-2 mm and lateral dimensions of 48 × 60 and 100 × 100 mm, which ensured absorption of heat-transfer fluids (distilled water, ethyl alcohol, acetone) to a height of 100 mm against gravity forces. The thermal resistance of flat ceramic heat pipes with this capillary structure reaches 0.07°C/W, which is quite acceptable for their use as heat sinks in systems of thermal regime control for electronic components and as heat exchange plates for large-size thermoelectric conversion units.

  2. Proceedings of the AD HOC Workshop on Ceramics for Li/FeS{sub 2} batteries

    SciTech Connect

    Not Available

    1993-12-31

    Representatives from industry, the U.S. Advanced Battery Consortium (USABC), DOE, national laboratories, and other govt agencies met to develop recommendations and actions for accelerating the development of ceramic components critical to the successful introduction of the Li/FeS{sub 2} bipolar battery for electric vehicles. Most of the workshop is devoted to electrode materials, bipolar designs, separators, and bipolar plates. The bulk of this document is viewographs and is divided into: ceramics, USABC overview, SAFT`s Li/FeS{sub 2} USABC program, bipolar Li/FeS{sub 2} component development, design requirements for bipolar plates, separator design requirements, compatibility of ceramic insulators with lithium, characterization of MgO for use in separators, resistivity measurements of separators, sintered AlN separators for LiMS batteries, etc.

  3. Sintering of corundum ceramics based on aluminum hydroxide

    SciTech Connect

    Afoninia, G.A.; Leonov, V.G.

    1995-09-01

    The possibility of using aluminum hydroxide obtained by the precipitation method for synthesis of corundum ceramics with additives forming a liquid phase during firing and without additives, is investigated. The optimum parameters of the manufacturing process and the main properties of the material recommended for testing in the production of glass ceramic substrates for integrated circuits are investigated.

  4. Guanidine Soaps As Vehicles For Coating Ceramic Fibers

    NASA Technical Reports Server (NTRS)

    Philipp, Warren H.; Veitch, Lisa C.; Jaskowiak, Martha H.

    1994-01-01

    Soaps made from strong organic base guanidine and organic fatty acids serve as vehicles and binders for coating ceramic fibers, various smooth substrates, and other problematic surfaces with thin precious-metal or metal-oxide films. Films needed to serve as barriers to diffusion in fiber/matrix ceramic composite materials. Guanidine soaps entirely organic and burn off, leaving no residues.

  5. Guanidine Soaps As Vehicles For Coating Ceramic Fibers

    NASA Technical Reports Server (NTRS)

    Philipp, Warren H.; Veitch, Lisa C.; Jaskowiak, Martha H.

    1994-01-01

    Soaps made from strong organic base guanidine and organic fatty acids serve as vehicles and binders for coating ceramic fibers, various smooth substrates, and other problematic surfaces with thin precious-metal or metal-oxide films. Films needed to serve as barriers to diffusion in fiber/matrix ceramic composite materials. Guanidine soaps entirely organic and burn off, leaving no residues.

  6. Issues and examples regarding growth of AlN, GaN and Al{sub x}Ga{sub 1{minus}x}N thin films via OMVPE and gas source MBE

    SciTech Connect

    Davis, R.F.; Weeks, T.W. Jr.; Bremser, M.D.; Tanaka, S.; Kern, R.S.; Sitar, Z.; Ailey, K.S.; Perry, W.G.; Wang, C.

    1996-11-01

    Organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) are the most common methods for the growth of thin films of AlN and GaN. Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of success. Both growth techniques have been employed by the authors to grow AlN, GaN and Al{sub x}Ga{sub 1{minus}x}N thin films primarily on 6H-SiC(0001). The mismatch in atomic layer stacking sequences along the growth direction produces double positioning boundaries in AlN and the alloys at the SiC steps; the sequence problem appears to discourage the two-dimensional nucleation of GaN. Films of these materials grown by MBE at 650 C are textured; monocrystalline films are achieved between 850 C (pure GaN) and 1,050 C (pure AlN) by this technique and OMVPE. Donor and acceptor doping of GaN has been achieved via MBE without post growth annealing. Acceptor doping in CVD material requires annealing to displace the H from the Mg and eventually remove it from the material. High brightness light emitting diodes are commercially available; however, numerous concerns regarding metal and nitrogen sources, heteroepitaxial nucleation, the role of buffer layers, surface migration rates as a function of temperature, substantial defect densities and their effect on film and device properties, ohmic and rectifying contacts, wet and dry etching and suitable gate and field insulators must and are being addressed. Selected issues surrounding the growth of these materials with particular examples drawn from the authors` research are presented herein.

  7. Studies of the Inverted Meniscus Deposition of Silicon on Ceramic

    NASA Technical Reports Server (NTRS)

    Zook, J. D.; Grung, B.; Schuldt, S. B.; Schmit, F. M.; Heaps, J. D.

    1983-01-01

    Controlled temperature profiles essential to production of solar cells. Studies of inverted meniscus process for depositing silicon coatings on ceramic substrates described in new report. When fully developed, processed used to manufacture low-cost solar photovoltaic cells.

  8. Studies of the Inverted Meniscus Deposition of Silicon on Ceramic

    NASA Technical Reports Server (NTRS)

    Zook, J. D.; Grung, B.; Schuldt, S. B.; Schmit, F. M.; Heaps, J. D.

    1983-01-01

    Controlled temperature profiles essential to production of solar cells. Studies of inverted meniscus process for depositing silicon coatings on ceramic substrates described in new report. When fully developed, processed used to manufacture low-cost solar photovoltaic cells.

  9. Durability of ceramic catalytic converters for motorcycles

    SciTech Connect

    Reddy, K.P.; Scott, P.L.; Hwang, H.S.; Mooney, J.J.

    1995-12-31

    Motorcycle exhaust emission standards throughout the world are becoming more stringent. Emission control systems utilizing the catalytic converter are already in production in Taiwan for 2-stroke engine motorcycles. Catalysts designed for 2-stroke engines encounter a more severe exhaust environment than do those designed for 4-stroke engines. The two aspects of increased severity are the higher temperatures and higher stresses due to engine vibrations. Precious metal catalysts have been designed to operate in the thermal environment of 2-stroke engines and such catalysts have been successfully applied to both metal and ceramic substrates. However, until now, only the metal substrate catalysts have been utilized in motorcycle application. Ceramic based catalysts have not been considered because the mounting material that holds the catalyst substrate in place did not have enough durability to withstand the thermal/vibrational forces encountered in 2-stroke engine exhaust. Ceramic substrates have many advantages such as superior high temperature strength, which is especially important for the 2-stroke engine application, flexibility in cell shape and density, and lower cost. To realize these benefits, efforts were made in this study to develop better mounting systems. The results of this effort indicate that the durability requirements of 2-stroke engine can be met with the ceramic catalyst substrates if the improved mounting designs reported in the present study are employed.

  10. Experimental study of ceramic coated tip seals for turbojet engines

    SciTech Connect

    Biesiadny, T.J.; Klann, G.A.; Lassow, E.S.; Mchenry, M.

    1985-01-01

    Ceramic gas-path seals were fabricated and successfully operated over 1000 cycles from flight idle to maximum power in a small turboshaft engine. The seals were fabricated by plasma spraying zirconia over a NiCoCrAlX bond boat on the Haynes 25 substrate. Coolant-side substrate temperatures and related engine parameters were recorded. Post-test inspection revealed mudflat surface cracking with penetration to the ceramic bond-coat interface.

  11. Experimental study of ceramic coated tip seals for turbojet engines

    NASA Technical Reports Server (NTRS)

    Biesiadny, T. J.; Klann, G. A.; Lassow, E. S.; Mchenry, M.; Mcdonald, G.; Hendricks, R. C.

    1985-01-01

    Ceramic gas-path seals were fabricated and successfully operated over 1000 cycles from flight idle to maximum power in a small turboshaft engine. The seals were fabricated by plasma spraying zirconia over a NiCoCrAlX bond boat on the Haynes 25 substrate. Coolant-side substrate temperatures and related engine parameters were recorded. Post-test inspection revealed mudflat surface cracking with penetration to the ceramic bond-coat interface.

  12. Density functional theory study of the adsorption and incorporation of Sc and Y on the AlN(0001) surface

    NASA Astrophysics Data System (ADS)

    González-Hernández, Rafael; González-Garcia, Alvaro; López-Perez, William

    2016-06-01

    Density functional theory (DFT) calculations were carried out in order to study the adsorption and incorporation of scandium and yttrium atoms on the AlN(0001) surface aiming to gain insight into epitaxial growth of ScxAl1-x N and YxAl1-x N layers on AlN. The adsorption energy, geometry, formation energy, band structure and density of states of Sc (and Y) adatom/AlN(0001) systems are calculated. The calculations showed that the interaction between Sc (and Y) adatom and the AlN(0001) surface is strong (~ 3.9 eV) and it prefers to adsorb on N-top site (T4). However, formation energy calculations reveal that the incorporation of Sc and Y atoms in the Al-substitutional site is energetically more favorable compared with the adsorption on the top layers, which can be attributed to the lower enthalpy of formation of ScN and YN with respect to that of AlN. The results also suggest that the Sc and Y atoms prefer to incorporate in top AlN surface layers. At full coverage, calculations show the formation of metallic ScxN and YxAl1-x N layers on the AlN polar surface over the entire range of Al chemical potentials, in agreement with experimental observations. In addition, we found that for high coverage Sc atoms couple ferromagnetically in the Al-substitutional sites on the AlN(0001) surface.

  13. Microstructure and chemical wet etching characteristics of AlN films deposited by ac reactive magnetron sputtering

    SciTech Connect

    Tanner, S. M.; Felmetsger, V. V.

    2010-01-15

    The influence of the surface morphology of a molybdenum underlayer on the crystallinity and etchability of reactively sputtered c-axis oriented aluminum nitride thin films was investigated. Atomic force microscopy, scanning electron microscopy, transmission electron microscopy, high resolution x-ray diffraction, and defect selective chemical etching were used to characterize the microstructure of the Mo and AlN films. 1000 nm thick films of AlN with a full width at half maximum (FWHM) of the x-ray rocking curve ranging from 1.1 deg. to 1.9 deg. were deposited on 300 nm thick Mo underlayers with a FWHM of around 1.5 deg. The Ar pressure during the Mo deposition had a critical effect on the Mo film surface morphology, affecting the structure of the subsequently deposited AlN films and, hence, their wet etching characteristics. AlN films deposited on Mo sputtered at a relatively high pressure could not be etched completely, while AlN films deposited on low pressure Mo etched more easily. Postdeposition etching of the Mo surface in Ar rf discharge prior to deposition of the AlN film was found to influence the formation of AlN residuals that were difficult to etch. Optimal rf plasma etching conditions were found, which minimized the formation of these residuals.

  14. Early and Late Retrieval of the ALN Removable Vena Cava Filter: Results from a Multicenter Study

    SciTech Connect

    Pellerin, O.; Barral, F. G.; Lions, C.; Novelli, L.; Beregi, J. P.; Sapoval, M.

    2008-09-15

    Retrieval of removable inferior vena cava (IVC) filters in selected patients is widely practiced. The purpose of this multicenter study was to evaluate the feasibility and results of percutaneous removal of the ALN removable filter in a large patient cohort. Between November 2003 and June 2006, 123 consecutive patients were referred for percutaneous extraction of the ALN filter at three centers. The ALN filter is a removable filter that can be implanted through a femoral/jugular vein approach and extracted by the jugular vein approach. Filter removal was attempted after an implantation period of 93 {+-} 15 days (range, 6-722 days) through the right internal jugular vein approach using the dedicated extraction kit after control inferior vena cavography. Following filter removal, vena cavograms were obtained in all patients. Successful extraction was achieved in all but one case. Among these successful retrievals, additional manipulation using a femoral approach was needed when the apex of the filter was close to the IVC wall in two patients. No immediate IVC complications were observed according to the postimplantation cavography. Neither technical nor clinical differences between early and late filter retrieval were noticed. Our data confirm the safety of ALN filter retrieval up to 722 days after implantation. In infrequent cases, additional endovenous filter manipulation is needed to facilitate extraction.

  15. Green electroluminescence from a Tb-doped AlN thin-film device on Si

    NASA Astrophysics Data System (ADS)

    Lu, F.; Carius, R.; Alam, A.; Heuken, M.; Buchal, Ch.

    2002-09-01

    Green photoluminescence and electroluminescence (EL) from Tb implanted AlN films have been observed at room temperature. The AlN films of 180 nm thickness were grown on n-type Si(111) by metalorganic chemical vapor deposition. X-ray diffraction shows that the AlN is polycrystalline. The AlN films were doped by ion implantation of Tb to a peak concentration of 1 at. %. A postimplantation annealing step was required to obtain optically active Tb ions. A dc EL device was fabricated using a transparent ZnO:Al top electrode. The strong room-temperature green light emission was observable with the naked eye. It was obtained with a drive current density of 2-70 mA/cm2 at a drive voltage of 70-100 V. The emission lines between 490 and 650 nm originate from Tb3+ transitions from the 5D4 level to ground state multiplets. The observed luminescence lifetimes are approximately 0.5 ms.

  16. Disordering and Dopant Behaviour in Au+ Ion-Irradiated AlN

    SciTech Connect

    Jiang, Weilin; Bae, In-Tae; Weber, William J.

    2007-09-05

    Single-crystal AlN films on SiC were irradiated at 145 K with 1.0 MeV Au+ ions to a wide range of ion fluences. The accumulation of disorder on both the Al and N sublattices in AlN has been investigated in situ using conventional Rutherford backscattering spectrometry (RBS) and non-RBS along the <0001>-axial channelling direction. The results suggest that a disorder saturation stage is attained following an initial disorder increase at intermediate doses (< 10 dpa). A continuously amorphized layer was not formed in AlN for doses up to 208 dpa. Similar disordering behaviour is observed for the Al and N sublattices. The lattice disorder produced at 145 K is thermally stable at room temperature; further irradiation does not induce disorder recovery. The microstructures in the irradiated AlN exhibit both amorphous and crystalline domains at the stage of disorder saturation. The implanted Au does not show significant redistribution during the ion irradiation or room-temperature annealing.

  17. Stepwise conversion of a single source precursor into crystalline AlN by transamination reaction

    SciTech Connect

    Schulz, Stephan Bauer, Tillmann; Hoffbauer, Wilfried; Schmedt auf der Guenne, Joern; Doerr, Markus; Marian, Christel M.; Assenmacher, Wilfried

    2008-03-15

    Ammonolysis of the monomeric, base-stabilized trisaminoalane Me{sub 3}N-Al[N(H)Dipp)]{sub 3} (Dipp=2,6-{sup i}Pr{sub 2}-C{sub 6}H{sub 3}) yielded Al-N oligomers, which were characterized in detail by solid state NMR spectroscopy ({sup 1}H, {sup 13}C, {sup 15}N, {sup 27}Al) and TGA/DTA. Pyrolysis of as-prepared oligomers at different temperatures in an argon steam yielded carbon-containing black solids, whereas pyrolysis under a steady flow of NH{sub 3} produced pure aluminum nitride (AlN). The role of the pyrolysis temperature and the influence of NH{sub 3} on the formation of crystalline materials were investigated. As-prepared AlN was characterized by solid state NMR spectroscopy ({sup 15}N, {sup 27}Al), X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). Theoretical calculations were performed in order to identify potential reaction intermediates. - Graphical abstract: Ammonolysis reactions of Me{sub 3}N-Al(NHDipp){sub 3} in liquid NH{sub 3} yielded Al-N oligomers, which can be transformed into nanocrystalline aluminum nitride particles under thermolysis conditions at 1000 deg. C. Theoretical calculations were performed in order to identify potential reaction intermediates.

  18. Investigation of Donor and Acceptor Ion Implantation in AlN

    SciTech Connect

    Osinsky, Andrei

    2015-09-16

    AlGaN alloys with high Al composition and AlN based electronic devices are attractive for high voltage, high temperature applications, including microwave power sources, power switches and communication systems. AlN is of particular interest because of its wide bandgap of ~6.1eV which is ideal for power electronic device applications in extreme environments which requires high dose ion implantation. One of the major challenges that need to be addressed to achieve full utilization of AlN for opto and microelectronic applications is the development of a doping strategy for both donors and acceptors. Ion implantation is a particularly attractive approach since it allows for selected-area doping of semiconductors due to its high spatial and dose control and its high throughput capability. Active layers in the semiconductor are created by implanting a dopant species followed by very high temperature annealing to reduce defects and thereby activate the dopants. Recovery of implant damage in AlN requires excessively high temperature. In this SBIR program we began the investigation by simulation of ion beam implantation profiles for Mg, Ge and Si in AlN over wide dose and energy ranges. Si and Ge are implanted to achieve the n-type doping, Mg is investigated as a p-type doping. The simulation of implantation profiles were performed in collaboration between NRL and Agnitron using a commercial software known as Stopping and Range of Ions in Matter (SRIM). The simulation results were then used as the basis for ion implantation of AlN samples. The implanted samples were annealed by an innovative technique under different conditions and evaluated along the way. Raman spectroscopy and XRD were used to determine the crystal quality of the implanted samples, demonstrating the effectiveness of annealing in removing implant induced damage. Additionally, SIMS was used to verify that a nearly uniform doping profile was achieved near the sample surface. The electrical characteristics

  19. Hybrid density functional theory studies of AlN and GaN under uniaxial strain.

    PubMed

    Qin, Lixia; Duan, Yifeng; Shi, Hongliang; Shi, Liwei; Tang, Gang

    2013-01-30

    The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the same structural transition from wurtzite to a graphite-like phase at very large compressive strains, similarly to other wurtzite semiconductors. Our calculations further reveal that this well-known phase transition is driven by the transverse-acoustic soft phonon mode associated with elastic instabilities. (ii) The applied tensile strain can either drastically suppress or strongly enhance the polarization and piezoelectricity, based on the value of the strain. Furthermore, large enhancements of polarization and piezoelectricity close to the phase-transition regions at large compressive strains are predicted, similar to those previously predicted in ferroelectric fields. Our calculations indicate that such colossal enhancements are strongly correlated to phase transitions when large atomic displacements are generated by external strains. (iii) Under the same strain, AlN and GaN have significantly different electronic properties: both wurtzite and graphite-like AlN always display direct band structures, while the the bandgap of wurtzite GaN is always direct and that of graphite-like GaN always indirect. Furthermore, the bandgap of graphite-like AlN is greatly enhanced by large compressive strain, but that of wurtzite GaN is not sensitive to compressive strain. Our results are drastically different from those for equibiaxial strain (Duan et al 2012 Appl. Phys. Lett. 100 022104).

  20. The electronic structures of AlN and InN wurtzite nanowires

    NASA Astrophysics Data System (ADS)

    Xiong, Wen; Li, Dong-Xiao

    2017-07-01

    We derive the relations between the analogous seven Luttinger-Kohn parameters and six Rashba-Sheka-Pikus parameters for wurtzite semiconductors, which can be used to investigate the electronic structures of some wurtzite semiconductors such as AlN and InN materials, including their low-dimensional structures. As an example, the electronic structures of AlN and InN nanowires are calculated by using the derived relations and six-band effective-mass k · p theory. Interestingly, it is found that the ground hole state of AlN nanowires is always a pure S state whether the radius R is small (1 nm) or large (6 nm), and the ground hole state only contains | Z > Bloch orbital component. Therefore, AlN nanowires is the ideal low-dimensional material for the production of purely linearly polarized π light, unlike ZnO nanowires, which emits plane-polarized σ light. However, the ground hole state of InN nanowires can be tuned from a pure S state to a mixed P state when the radius R is larger than 2.6 nm, which will make the polarized properties of the lowest optical transition changes from linearly polarized π light to plane-polarized σ light. Meanwhile, the valence band structures of InN nanowires will present strong band-crossings when the radius R increases to 6 nm, and through the detail analysis of possible transitions of InN nanowires at the Γ point, we find some of the neighbor optical transitions are almost degenerate, because the spin-orbit splitting energy of InN material is only 0.001 eV. Therefore, it is concluded that the electronic structures and optical properties of InN nanowires present great differences with that of AlN nanowires.

  1. Hybrid density functional theory studies of AlN and GaN under uniaxial strain

    NASA Astrophysics Data System (ADS)

    Qin, Lixia; Duan, Yifeng; Shi, Hongliang; Shi, Liwei; Tang, Gang

    2013-01-01

    The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the same structural transition from wurtzite to a graphite-like phase at very large compressive strains, similarly to other wurtzite semiconductors. Our calculations further reveal that this well-known phase transition is driven by the transverse-acoustic soft phonon mode associated with elastic instabilities. (ii) The applied tensile strain can either drastically suppress or strongly enhance the polarization and piezoelectricity, based on the value of the strain. Furthermore, large enhancements of polarization and piezoelectricity close to the phase-transition regions at large compressive strains are predicted, similar to those previously predicted in ferroelectric fields. Our calculations indicate that such colossal enhancements are strongly correlated to phase transitions when large atomic displacements are generated by external strains. (iii) Under the same strain, AlN and GaN have significantly different electronic properties: both wurtzite and graphite-like AlN always display direct band structures, while the the bandgap of wurtzite GaN is always direct and that of graphite-like GaN always indirect. Furthermore, the bandgap of graphite-like AlN is greatly enhanced by large compressive strain, but that of wurtzite GaN is not sensitive to compressive strain. Our results are drastically different from those for equibiaxial strain (Duan et al 2012 Appl. Phys. Lett. 100 022104).

  2. Ceramic fiber ceramic matrix filter development

    SciTech Connect

    Judkins, R.R.; Stinton, D.P.; Smith, R.G.; Fischer, E.M.

    1994-09-01

    The objectives of this project were to develop a novel type of candle filter based on a ceramic fiber-ceramic matrix composite material, and to extend the development to full-size, 60-mm OD by 1-meter-long candle filters. The goal is to develop a ceramic filter suitable for use in a variety of fossil energy system environments such as integrated coal gasification combined cycles (IGCC), pressurized fluidized-bed combustion (PFBC), and other advanced coal combustion environments. Further, the ceramic fiber ceramic matrix composite filter, hereinafter referred to as the ceramic composite filter, was to be inherently crack resistant, a property not found in conventional monolithic ceramic candle filters, such as those fabricated from clay-bonded silicon carbide. Finally, the adequacy of the filters in the fossil energy system environments is to be proven through simulated and in-plant tests.

  3. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Katsuno, Shota; Yasuda, Toshiki; Hagiwara, Koudai; Koide, Norikatsu; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    2017-01-01

    We systematically investigated metalorganic vapor phase epitaxy (MOVPE) growths of AlN layers with trimethylgallium (TMGa) supply on sapphire substrates at 1100-1250 °C. We found that Ga incorporations into the AlN layers contributed to smooth surfaces covered with step terraces at the early stage of the Al(Ga)N growth. In addition, a GaN mole fraction leading to the smooth surfaces was found to be around 2-3% at the beginning of growth. The Ga supply during the AlN layer growth at 1150 °C provided very smooth Al0.99Ga0.01N layers on sapphire substrates.

  4. Formation of (Ti,Al)N/Ti{sub 2}AlN multilayers after annealing of TiN/TiAl(N) multilayers deposited by ion beam sputtering

    SciTech Connect

    Dolique, V.; Jaouen, M.; Cabioc'h, T.; Pailloux, F.; Guerin, Ph.; Pelosin, V.

    2008-04-15

    By using ion beam sputtering, TiN/TiAl(N) multilayers of various modulation wavelengths ({lambda}=8, 13, and 32 nm) were deposited onto silicon substrates at room temperature. After annealing at 600 deg. C in vacuum, one obtains for {lambda}=13 nm a (Ti,Al)N/Ti{sub 2}AlN multilayer as it is evidenced from x-ray diffraction, high resolution transmission electron microscopy, and energy filtered electron imaging experiments. X-ray photoelectron spectroscopy (XPS) experiments show that the as-deposited TiAl sublayers contain a noticeable amount of nitrogen atoms which mean concentration varies with the period {lambda}. They also evidenced the diffusion of aluminum into TiN sublayers after annealing. Deduced from these observations, we propose a model to explain why this solid-state phase transformation depends on the period {lambda} of the multilayer.

  5. AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal

    NASA Astrophysics Data System (ADS)

    Hahn, Herwig; Reuters, Ben; Kalisch, Holger; Vescan, Andrei

    2013-07-01

    The need for efficient power converters is currently a major driver of GaN-on-Si research activities. Among several areas, a large research field is the engineering of enhancement mode devices. Several solutions have been provided in the past. Yet, almost all solutions either lack the compatibility with epitaxy on Si substrates (which is a necessity in terms of cost) or suffer from low positive threshold voltages (Vth) below +1 V. In power applications, there is definitely a need for higher values of Vth. In this paper, we propose the utilization of AlN barriers in conjunction with AlGaN channels to obtain Vth values of more than +3 V while still maintaining the low power-switching losses obtained in GaN-based heterostructure field-effect transistors.

  6. Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films

    PubMed Central

    2009-01-01

    Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100–200 watts RF power and 5–8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of4G5/2 → 6H5/2,4G5/2 → 6H7/2,4G5/2 → 6H9/2, and4G5/2 → 6H11/2transitions. Photoluminescence (PL) provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence. PMID:20596367

  7. Enhanced piezoelectric and mechanical properties of AlN-modified BaTiO3 composite ceramics.

    PubMed

    Xu, Dan; Wang, Lidong; Li, Weili; Wang, Wei; Hou, Yafei; Cao, Wenping; Feng, Yu; Fei, Weidong

    2014-07-14

    BaTiO3-xAlN (BT-xAlN) composite ceramics were prepared by conventional solid state reaction sintering. The effects of the AlN content on the crystalline structures, densities, and electrical and mechanical properties of the BT ceramics were investigated. The BT-1.5%AlN ceramic exhibits a good piezoelectric constant of 305 pC N(-1) and an improved Vickers hardness of 5.9 GPa. The enhanced piezoelectricity originates from interactions between defect dipoles and spontaneous polarization inside the domains due to the occurrence of local symmetry, caused by the preferential distribution of the Al(3+)-N(3-) pairs vertical to the c axis. The hardening of the material is attributed to the improved density, and particle and grain boundary strengthening. Our work indicates that if a suitable doping ion pair is designed, lead-free ceramic systems prepared from ordinary raw materials by a conventional sintering method have a high probability of exhibiting good piezoelectric and mechanical properties simultaneously.

  8. Shock wave loading of high-strength ceramics with components undergoing phase transitions

    NASA Astrophysics Data System (ADS)

    Maevskii, K. K.; Kinelovskii, S. A.

    2016-11-01

    One of the methods of solving the problem of creating ceramics with specified properties is a shock wave loading of multicomponent mixtures. The numerical simulation results of thermodynamic parameters are presented for mixtures consisting of components that experience phase transitions during shock wave loading: quartz SiO2, silicon nitride Si3N4, aluminum nitride AlN. The calculation results obtained by thermodynamic equilibrium component (TEC) models are compared with both the experimental data and the simulation results obtained by other authors.

  9. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

    PubMed

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-05

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

  10. Method for adhesion of metal films to ceramics

    DOEpatents

    Lowndes, Douglas H.; Pedraza, Anthony J.; DeSilva, Melvin J.; Kumar, Rajagopalan A.

    1997-01-01

    Methods for making strongly bonded metal-ceramic materials. The methods include irradiating a portion of the surface of the ceramic material with a pulsed ultraviolet laser having an energy density sufficient to effect activation of the irradiated surface of the ceramic material so that adhesion of metals subsequently deposited onto the irradiated surface is substantially increased. Advantages of the invention include (i) the need for only a small number of laser pulses at relatively low focused energy density, (ii) a smoother substrate surface, (iii) activation of the laser-treated surface which provides a chemical bond between the surface and a metal deposited thereon, (iv) only low temperature annealing is required to produce the strong metal-ceramic bond; (v) the ability to obtain strong adhesion between ceramic materials and oxidation resistant metals; (vi) ability to store the laser treated ceramic materials for later deposition of metals thereon.

  11. Method for adhesion of metal films to ceramics

    DOEpatents

    Lowndes, D.H.; Pedraza, A.J.; DeSilva, M.J.; Kumar, R.A.

    1997-12-30

    Methods for making strongly bonded metal-ceramic materials are disclosed. The methods include irradiating a portion of the surface of the ceramic material with a pulsed ultraviolet laser having an energy density sufficient to effect activation of the irradiated surface of the ceramic material so that adhesion of metals subsequently deposited onto the irradiated surface is substantially increased. Advantages of the invention include (i) the need for only a small number of laser pulses at relatively low focused energy density, (ii) a smoother substrate surface, (iii) activation of the laser-treated surface which provides a chemical bond between the surface and a metal deposited thereon, (iv) only low temperature annealing is required to produce the strong metal-ceramic bond; (v) the ability to obtain strong adhesion between ceramic materials and oxidation resistant metals; (vi) ability to store the laser treated ceramic materials for later deposition of metals thereon. 7 figs.

  12. Ceramic materials testing and modeling

    SciTech Connect

    Wilfinger, K. R., LLNL

    1998-04-30

    corrosion by limiting the transport of water and oxygen to the ceramic-metal interface. Thermal spray techniques for ceramic coating metallic structures are currently being explored. The mechanics of thermal spray resembles spray painting in many respects, allowing large surfaces and contours to be covered smoothly. All of the relevant thermal spray processes use a high energy input to melt or partially melt a powdered oxide material, along with a high velocity gas to impinge the molten droplets onto a substrate where they conform, quench, solidify and adhere mechanically. The energy input can be an arc generated plasma, an oxy-fuel flame or an explosion. The appropriate feed material and the resulting coating morphologies vary with technique as well as with application parameters. To date on this project, several versions of arc plasma systems, a detonation coating system and two variations of high velocity oxy-fuel (HVOF) fired processes have been investigated, operating on several different ceramic materials.

  13. Ceramic catalyst materials

    SciTech Connect

    Sault, A.G.; Gardner, T.J.; Hanprasopwattanna, A.; Reardon, J.; Datye, A.K.

    1995-08-01

    Hydrous titanium oxide (HTO) ion-exchange materials show great potential as ceramic catalyst supports due to an inherently high ion-exchange capacity which allows facile loading of catalytically active transition metal ions, and an ability to be cast as thin films on virtually any substrate. By coating titania and HTO materials onto inexpensive, high surface area substrates such as silica and alumina, the economics of using these materials is greatly improved, particularly for the HTO materials, which are substantially more expensive in the bulk form than other oxide supports. In addition, the development of thin film forms of these materials allows the catalytic and mechanical properties of the final catalyst formulation to be separately engineered. In order to fully realize the potential of thin film forms of titania and HTO, improved methods for the deposition and characterization of titania and HTO films on high surface area substrates are being developed. By varying deposition procedures, titania film thickness and substrate coverage can be varied from the submonolayer range to multilayer thicknesses on both silica and alumina. HTO films can also be formed, but the quality and reproducibility of these films is not nearly as good as for pure titania films. The films are characterized using a combination of isopropanol dehydration rate measurements, point of zero charge (PZC) measurements, BET surface area, transmission electron microscopy (TEM), and elemental analysis. In order to assess the effects of changes in film morphology on catalytic activity, the films are being loaded with MoO{sub 3} using either incipient wetness impregnation or ion-exchange of heptamolybdate anions followed by calcining. The MoO{sub 3} is then sulfided to form MOS{sub 2}, and tested for catalytic activity using pyrene hydrogenation and dibenzothiophene (DBT) desulfurization, model reactions that simulate reactions occurring during coal liquefaction.

  14. polycrystalline ceramics

    NASA Astrophysics Data System (ADS)

    Cai, Yunqi; Ma, Ji; Cui, Qi; Wang, Wenzhang; Zhang, Hui; Chen, Qingming

    2014-12-01

    La2/3Ca1/3MnO3 polycrystalline ceramics were synthesized by sol-gel method. Sharp temperature coefficient of resistance (TCR) variation (with peak value up to 22 %) has been observed near the metal-insulator transition temperature T MI (273 K) for the sample sintered at 1,450 °C. This TCR value is much higher than the previously reported values for the undoped and Ag-doped La0.67Ca0.33MnO3 samples and is comparable to the optimized thin films. It was concluded that the improved physical properties of the La0.67Ca0.33MnO3 material are due to its improved microstructure and homogeneity.

  15. Modeling of the effects of different substrate materials on the residual thermal stresses in the aluminum nitride crystal grown by sublimation

    NASA Astrophysics Data System (ADS)

    Lee, R. G.; Idesman, A.; Nyakiti, L.; Chaudhuri, J.

    2009-02-01

    A three-dimensional numerical finite element modeling method is applied to compare interfacial residual thermal stress distribution in AlN single crystals grown by using different substrates such as silicon carbide, boron nitride, tungsten, tantalum carbide, and niobium carbide. A dimensionless coordinate system is used which reduces the numbers of computations and hence simplifies the stress analysis. All components of the stress distribution, both in the film and in the substrate, including the normal stress along the growth direction as well as in-plane normal stresses and shear stresses are fully investigated. This information about the stress distribution provides insight into understanding and controlling the AlN single crystal growth by the sublimation technique. The normal stress in the film at the interface along the growth direction and the shear stresses are zero except at the edges, whereas in-plane stresses are nonzero. The in-plane stresses are compressive when TaC and NbC substrates are used. A small compressive stress might be beneficial in prohibiting crack growth in the film. The compressive stress in the AlN is lower for the TaC substrate than that for the NbC. Tensile in-plane stresses are formed in the AlN for 6H-SiC, BN, and W substrates. This tensile stress in the film is detrimental as it will assist in the crack growth. The stress concentration at the edges of the AlN film at the interface is compressive in nature when TaC and NbC are used as a substrate. This causes the film to bend downward (i.e., convex shape) and assist it to adhere to the substrate. The AlN film curves upward or in a concave shape when SiC, BN, and W substrates are used since the stress concentration at the edges of the AlN film is tensile at the interface and this may cause detachment of the film from the substrate.

  16. Hotzone design and optimization for 2-in. AlN PVT growth process through global heat transfer modeling and simulations

    NASA Astrophysics Data System (ADS)

    Wang, Z. H.; Deng, X. L.; Cao, K.; Wang, J.; Wu, L.

    2017-09-01

    A tungsten based reactor to grow 2-in. PVT AlN crystals by induction heating was designed. In order to investigate the effect of the hotzone structure layout on the temperature distribution in the growth chamber, a series of global quasi-steady numerical simulations with and without gas convection was performed using the FEMAG software. Simulation results show that the temperature gradient between the AlN powder sources and the deposition interface is influenced profoundly by the size of the induction heater and the crucible thickness. Also the tungsten heat shields have obvious effects on the global temperature distribution and heater power consumption during the growth process. However, the number of tungsten shield layers plays a trivial role on the temperature gradient between the ALN powder sources and the crucible top. Global heat transfer simulations show that the designed hotzone can provide an optimized and flexible environment for 2-in. AlN PVT growth.

  17. Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

    SciTech Connect

    Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

    2009-03-15

    The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template.

  18. AlN nanorod and nanoneedle arrays prepared by chloride assisted chemical vapor deposition for field emission applications.

    PubMed

    Song, Xubo; Guo, Zhigang; Zheng, Jie; Li, Xingguo; Pu, Yikang

    2008-03-19

    Hexagonal AlN nanorod and nanoneedle arrays were synthesized through the direct reaction of AlCl(3) and NH(3) by chemical vapor deposition at about 750 °C. Both the AlN nanoneedle and nanorod samples were of wurtzite structure and grew preferentially along the c-axis. With an increase in the ratio of NH(3) to Ar, an evolution from nanorods to nanoneedles was observed. A growth model was proposed to explain the possible growth mechanism. Measurements in field emission show that AlN nanoneedle arrays have a much lower turn-on field (3.1 V µm(-1)) compared to nanorod arrays (15.3 V µm(-1)), due to their large curvature geometry. The AlN nanoneedle arrays have potential applications in many fields, such as electron-emitting nanodevices and field-emission-based flat-panel displays.

  19. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

    SciTech Connect

    Chen, Shuo-Wei; Li, Heng; Lu, Tien-Chang

    2016-04-15

    The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

  20. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

    NASA Astrophysics Data System (ADS)

    Chen, Shuo-Wei; Li, Heng; Lu, Tien-Chang

    2016-04-01

    The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

  1. Ceramic inspection system

    DOEpatents

    Werve, Michael E.

    2006-05-16

    A system for inspecting a ceramic component. The ceramic component is positioned on a first rotary table. The first rotary table rotates the ceramic component. Light is directed toward the first rotary table and the rotating ceramic component. A detector is located on a second rotary table. The second rotary table is operably connected to the first rotary table and the rotating ceramic component. The second rotary table is used to move the detector at an angle to the first rotary table and the rotating ceramic component.

  2. Dental ceramics: An update

    PubMed Central

    Shenoy, Arvind; Shenoy, Nina

    2010-01-01

    In the last few decades, there have been tremendous advances in the mechanical properties and methods of fabrication of ceramic materials. While porcelain-based materials are still a major component of the market, there have been moves to replace metal ceramics systems with all ceramic systems. Advances in bonding techniques have increased the range and scope for use of ceramics in dentistry. In this brief review, we will discuss advances in ceramic materials and fabrication techniques. Examples of the microstructure property relationships for these ceramic materials will also be addressed. PMID:21217946

  3. Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle

    NASA Astrophysics Data System (ADS)

    Wang, Hua-Jie; Liu, Xue-Chao; Kong, Hai-Kuan; Xin, Jun; Gao, Pan; Shi, Er-Wei

    2016-07-01

    Porous AlN with low dielectric constant has been synthesized by the sacrificial template method based on the physical vapor transport principle. It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists of two parts. Firstly, AlN powder is placed in a graphite crucible. C/AlN composite can be formed by mixing decomposed AlN vapor and volatile carbon originated from a crucible at high temperature. Secondly, pores are formed after removing carbon from the C/AlN composite by an annealing process. The structure, morphology, porosity and properties of porous AlN are characterized. It is shown the obtained porous AlN has a thermal conductivity of 37.3 W/(m K) and a reduced dielectric constant of 5.5-6.1 (at 1 MHz). The porosity measured by a mercury porosimeter is 24.09%. It has been experimentally proved that porous AlN with a sufficiently porous structure and properties can be synthesized based on the vapor-phase principle.

  4. Effects of AlN Nanoparticles on the Microstructure, Solderability, and Mechanical Properties of Sn-Ag-Cu Solder

    NASA Astrophysics Data System (ADS)

    Jung, Do-Hyun; Sharma, Ashutosh; Lim, Dong-Uk; Yun, Jong-Hyun; Jung, Jae-Pil

    2017-09-01

    The addition of nanosized AlN particles to Sn-3.0 wt pctAg-0.5 wt pctCu (SAC305) lead-free solder alloy has been investigated. The various weight fractions of AlN (0, 0.03, 0.12, 0.21, 0.60 wt pct) have been dispersed in SAC305 solder matrix by a mechanical mixing and melting route. The influences of AlN nanosized particles on the microstructure, mechanical properties, and solderability ( e.g., spreadability and wettability) have been carried out. The structural and morphological features of the nanocomposite solder were characterized by scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and transmission electron microscope (TEM). The experimental results show that the best combination of solderability and mechanical properties is obtained at 0.21 wt pct AlN in the solder matrix. The reinforced composite solder with 0.21 wt pct AlN nanoparticles shows ≈25 pct improvement in ultimate tensile strength (UTS), and ≈4 pct increase in the spreadability. In addition, the results of microstructural analyses of composite solders indicate that the nanocomposite solder, especially reinforced with 0.21 wt pct of AlN nanoparticles, exhibits better microstructure and improved elongation percentage, compared with the monolithic SAC305 solder.

  5. Band alignment of HfO{sub 2}/AlN heterojunction investigated by X-ray photoelectron spectroscopy

    SciTech Connect

    Ye, Gang; Wang, Hong

    2016-04-18

    The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO{sub 2} was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 0.4 ± 0.2 eV at HfO{sub 2}/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO{sub 2} and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO{sub 2} and AlN.

  6. Activation of ion implanted Si in GaN using a dual AlN annealing cap

    NASA Astrophysics Data System (ADS)

    Hager, C. E.; Jones, K. A.; Derenge, M. A.; Zheleva, T. S.

    2009-02-01

    A dual annealing cap composed of a thin, low temperature metal-organic chemical vapor deposition (MOCVD) deposited AlN adhesion layer and a thicker, sputtered AlN film for added mechanical strength enabled us to anneal Si-implanted layers for 30 min at temperatures up to 1250 °C. At higher temperatures the cap was destroyed by the large partial pressure of the N2 from the GaN, which exceeds the yield strength of AlN. Electrical activations as high as 70% and electron mobilities comparable to those of in situ doped films were achieved. Compared to other methods, the surfaces are better protected using this cap because it adheres better than sputtered AlN, SiO2, or Si3N4; does not crack like MOCVD grown AlN films deposited at normal temperatures (˜1100 °C); and is stronger than thin MOCVD grown AlN films deposited at low temperatures (˜600 °C). Even though N does not escape, and in so doing, forms thermal etch pits, the surface of the annealed GaN is roughened by solid state diffusion with the surface roughness increasing with the annealing temperature.

  7. Metal-Ceramic composites via “in situ” methods

    NASA Astrophysics Data System (ADS)

    Florea, R. M.

    2017-08-01

    Several “in situ” methods for obtaining composite materials with ceramic particles were developed in order to overcome some of the inherent problems associated with conventional processes. This paper reviews the obtaining processes of composite materials with a greater emphasis on nitriding and oxidation by directed melting. These obtaining methods provide microstructures with different combinations of metal-ceramic. Metal matrix composites with controlled amounts of dispersed ceramic particles are obtained by “in situ” processes. The composite materials obtained are having different properties by controlling various processing variables such as temperature, time, the reactant phases and the reinforcing material. The properties of the “in situ” obtained materials depend mainly on the matrix and volume fraction of constituent phase. Briefly are reviewed the mechanical properties, hardness mechanisms and possible applications of these composite materials. Nitridation is much more attractive because with the variation of process parameters is obtained a wider range of microstructures and properties. The activation energy for the formation of AlN (A1N ˜ 100 kJ/mole) is smaller than that of oxidation (Al2O3 ˜ 400 kJ/mole) and growth rates (3 × 10-2 gm/cm2/s) are at least three times higher for oxidation.

  8. Investigation on the photoconductive behaviors of an individual AlN nanowire under different excited lights

    PubMed Central

    2012-01-01

    Ultra-long AlN nanowire arrays are prepared by chemical vapor deposition, and the photoconductive performances of individual nanowires are investigated in our self-built measurement system. Individual ultra-long AlN nanowire (UAN) exhibits a clear photoconductive effect under different excited lights. We attribute the positive photocurrent response of individual UAN to the dominant molecular sensitization effect. It is found that they have a much faster response speed (a rise and decay time of about 1 ms), higher photocurrent response (2.7×106), and more reproductive working performance (the photocurrent fluctuation is lower than 2%) in the air environment. Their better photoconductive performances are comparable to many nanostructures, which are suggested to be a candidate for building promising photosensitive nanodevices in the future. PMID:22883472

  9. Quantum chemical study of small AlnBm clusters: Structure and physical properties

    NASA Astrophysics Data System (ADS)

    Loukhovitski, Boris I.; Sharipov, Alexander S.; Starik, Alexander M.

    2017-08-01

    The structure and physical properties, including rotational constants, characteristic vibrational temperatures, collision diameter, dipole moment, static polarizability, the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO), and formation enthalpy of the different isomeric forms of AlnBm clusters with n + m ⩽ 7 are studied using density functional theory. The search of the structure of isomers has been carried employing multistep hierarchical algorithm. Temperature dependencies of thermodynamic functions, such as enthalpy, entropy, and specific heat capacity, have been determined both for the individual isomers and for the ensembles with equilibrium and frozen compositions for the each class of clusters taking into account the anharmonicity of cluster vibrations and the contribution of their excited electronic states. The prospects of the application of small AlnBm clusters as the components of energetic materials are also considered.

  10. The role of AlN encapsulation of GaN during implant activation annealing

    SciTech Connect

    Zolper, J.C.; Rieger, D.J.; Baca, A.G.; Pearton, S.J.; Lee, J.W.; Vartulli, C.R.; Stall, R.A.

    1996-09-01

    With the demonstration of implant doping of GaN and the resulting need to perform the activation anneal at 1100 C, details of thermal stability of the GaN surface needs to be understood. This work reports on the use of a sputtered AlN encapsulant to preserve the surface of GaN during such annealing. The surface was characterized by formation of Pt/Au Schottky contacts and by AES. Schottky contacts deposited an GaN annealed wtih the AlN encapsulant displayed good rectification properties while those formed on GaN annealed uncapped approached ohmic behavior. AES analysis supports the hypothesis that the uncapped sample has lost N from the very near surface which creates N-vacancies that act as donors and thereby form an n{sup +}-surface layer.

  11. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.

    PubMed

    Musolino, M; Tahraoui, A; Fernández-Garrido, S; Brandt, O; Trampert, A; Geelhaar, L; Riechert, H

    2015-02-27

    AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these layers improves with increasing layer thickness while their nucleation time decreases. Our results show that 4 nm is the smallest thickness of the AlN layer that allows the growth of well-aligned NWs with short nucleation time. Such an AlN buffer layer was successfully employed, together with a patterned SiOx mask, for the selective-area growth (SAG) of vertical GaN NWs. In addition, we fabricated light-emitting diodes (LEDs) from NW ensembles that were grown by means of self-organization phenomena on bare and on AlN-buffered Si substrates. A careful characterization of the optoelectronic properties of the two devices showed that the performance of NW-LEDs on bare and AlN-buffered Si is similar. Electrical conduction across the AlN buffer is facilitated by a high number of grain boundaries that were revealed by transmission electron microscopy. These results demonstrate that grainy AlN buffer layers on Si are compatible both with the SAG of GaN NWs and LED operation. Therefore, this study is a first step towards the fabrication of LEDs on Si substrates based on homogeneous NW ensembles.

  12. Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate.

    PubMed

    Tran, Binh Tinh; Hirayama, Hideki

    2017-09-22

    Growing III-V semiconductor materials on Si substrates for opto-electronic applications is challenging because their high lattice mismatch and different thermal expansion coefficients cause the epitaxial layers to have low quality. Here we report the growth of a high-quality AlN template on a micro-circle-patterned Si substrate by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. Then, we fabricated and characterized a deep-ultraviolet light-emitting diode (UV-LED) device using this AlN/patterned Si. By using standard lithography and inductively coupled plasma etching, the Si substrate was prepared with very high pattern density and was made deep enough to grow a thick AlN template with high crystal quality and very few threading dislocations, allowing for further re-growth of the deep UV-LED device. And by combining a transparent p-AlGaN contact layer, an electron blocking layer and using this high quality AlN template: a deep UV-LED device fabricated and showed a strong single sharp electroluminescence (EL) peak at 325 nm and achieved an external quantum efficiency (EQE) of about 0.03%, for a deep UV-LED grown on Si substrate.

  13. Ceramic Laser Materials

    PubMed Central

    Sanghera, Jasbinder; Kim, Woohong; Villalobos, Guillermo; Shaw, Brandon; Baker, Colin; Frantz, Jesse; Sadowski, Bryan; Aggarwal, Ishwar

    2012-01-01

    Ceramic laser materials have come a long way since the first demonstration of lasing in 1964. Improvements in powder synthesis and ceramic sintering as well as novel ideas have led to notable achievements. These include the first Nd:yttrium aluminum garnet (YAG) ceramic laser in 1995, breaking the 1 KW mark in 2002 and then the remarkable demonstration of more than 100 KW output power from a YAG ceramic laser system in 2009. Additional developments have included highly doped microchip lasers, ultrashort pulse lasers, novel materials such as sesquioxides, fluoride ceramic lasers, selenide ceramic lasers in the 2 to 3 μm region, composite ceramic lasers for better thermal management, and single crystal lasers derived from polycrystalline ceramics. This paper highlights some of these notable achievements. PMID:28817044

  14. Joining Ceramics By Brazing

    NASA Technical Reports Server (NTRS)

    Chiaramonte, Francis P.; Sudsina, Michael W.

    1992-01-01

    Certain ceramic materials tightly bond together by brazing with suitable alloys. Enables fabrication of parts of wide variety of shapes from smaller initial pieces of ceramics produced directly in only limited variety of shapes.

  15. BN, AlN, GaN, InN: Charge Neutrality Level, Surface, Interfaces, Doping

    NASA Astrophysics Data System (ADS)

    Brudnyi, V. N.

    2017-04-01

    On the basis of the charge neutrality concept, the analysis is fulfilled of the experimental data on the electron properties of the defective semiconductors after the radiation exposure, the electronic parameters of interfaces, surface work function and efficiency of doping with the impurities of high solubility in the nitrides of the group wz-III-N (BN, AlN, GaN, InN). The numerical evaluations of the charge neutrality levels in these compounds are presented.

  16. Characterization and Evaluation of TiB2-AlN Composites for Armor Applications

    DTIC Science & Technology

    2013-09-01

    particle sizes and one with larger particle sizes. All the composites were consolidated to near full density. Microstructural, mechanical-property, and...Figure 2. EDS spectrum of a BN particle . ......................................................................................5 Figure 3. XRD...powder (Stark D) was obtained from Stark. The TiB2 particles were equiaxed and ranged from 3.0 to 6.0 µm in diameter. The equiaxed AlN powder (Atofina

  17. Homoepitaxial seeding and growth of bulk AlN by sublimation

    NASA Astrophysics Data System (ADS)

    Hartmann, Carsten; Wollweber, Jürgen; Seitz, Christoph; Albrecht, Martin; Fornari, Roberto

    2008-03-01

    AlN boules, 35 mm in diameter and up to 25-mm long, were grown on TaC crucible lid in an inductively heated reactor. The growth rates range between 100 and 300 μm/h. The boules grown on TaC show a columnar structure mostly composed of <0 0 0 1> grains. The largest grains (4-5 mm in diameter) were sliced and used for subsequent growth runs. Successful epitaxial seeding and growth on the starting AlN wafer was demonstrated and confirmed by electron back-scatter diffraction (EBSD) measurements. Crystals were grown on both Al and N surfaces of the seeds up to a maximum diameter of about 9 mm so far. Formation of oxy-nitride layers, very detrimental to the further AlN deposition, could be avoided when starting from pre-sintered source powder. Secondary ion mass spectroscopy (SIMS) measurements on axial cuts revealed a relatively low oxygen content, with variable distribution along the growth direction (290 ppm near seed, 100 ppm near external surface).

  18. Optical, Structural and Paramagnetic Properties of Eu-Doped Ternary Sulfides ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y)

    PubMed Central

    Jarý, Vítězslav; Havlák, Lubomír; Bárta, Jan; Buryi, Maksym; Mihóková, Eva; Rejman, Martin; Laguta, Valentin; Nikl, Martin

    2015-01-01

    Eu-doped ternary sulfides of general formula ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y) are presented as a novel interesting material family which may find usage as X-ray phosphors or solid state white light emitting diode (LED) lighting. Samples were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, time-resolved photoluminescence spectroscopy, electron paramagnetic resonance, and X-ray excited fluorescence. Corresponding characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra, and decay kinetics curves, were measured and evaluated in a broad temperature range (8–800 K). Calculations including quantum local crystal field potential and spin-Hamiltonian for a paramagnetic particle in D3d local symmetry and phenomenological model dealing with excited state dynamics were performed to explain the experimentally observed features. Based on the results, an energy diagram of lanthanide energy levels in KLuS2 is proposed. Color model xy-coordinates are used to compare effects of dopants on the resulting spectrum. The application potential of the mentioned compounds in the field of white LED solid state lighting or X-ray phosphors is thoroughly discussed. PMID:28793612

  19. High efficiency tantalum-based ceramic composite structures

    NASA Technical Reports Server (NTRS)

    Stewart, David A. (Inventor); Leiser, Daniel B. (Inventor); DiFiore, Robert R. (Inventor); Katvala, Victor W. (Inventor)

    2010-01-01

    Tantalum-based ceramics are suitable for use in thermal protection systems. These composite structures have high efficiency surfaces (low catalytic efficiency and high emittance), thereby reducing heat flux to a spacecraft during planetary re-entry. These ceramics contain tantalum disilicide, molybdenum disilicide and borosilicate glass. The components are milled, along with a processing aid, then applied to a surface of a porous substrate, such as a fibrous silica or carbon substrate. Following application, the coating is then sintered on the substrate. The composite structure is substantially impervious to hot gas penetration and capable of surviving high heat fluxes at temperatures approaching 3000.degree. F. and above.

  20. Advanced Ceramic Armor Materials

    DTIC Science & Technology

    1990-05-11

    materials, toughened alumina, fiber -reinforced glass matrix composites, and multilayer-gradient materials for ballistic testing. Fabrication and...material systems: Multilayer advanced armor materials consisting of a hard ceramic faceplate bonded to a graphite fiber -reinforced glass matrix...toughened alumina, and fiber - applied studies of advanced reinforced ceramic matrix glass and glass -ceramic composites for ballistic testing. technologies