Thermal contact resistance measurement of conduction cooled binary current lead joint block in cryocooler based self field I-V characterization facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kundu, Ananya, E-mail: ananya@ipr.res.in; Das, Subrat Kumar; Agarwal, Anees Bano Pooja

2016-05-23

In the present study thermal resistance of conduction cooled current lead joint block employing two different interfacial material namely AlN sheet and Kapton Film have been studied in the temperature range 5K-35K. In each case, the performance of different interlayer materials e.g. Indium foil for moderately pressurized contacts (contact pressure <1 MPa), and Apiezon N Grease, GE varnish for low pressurized contact (contact pressure <1 MPa) is studied. The performances of AlN joint with Indium foil and with Apeizon N Grease are studied and it is observed that the contact resistance reduces more with indium foil as compared to greasedmore » contact. The contact resistance measurements of Kapton film with Apiezon N grease and with GE varnish were also carried out in the same temperature range. A comparative study of AlN joint with Indium foil and Kapton with GE varnish as filler material is carried out to demonstrate better candidate material among Kapton and AlN for a particular filler material in the same temperature range.« less

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

NASA Astrophysics Data System (ADS)

Chang, R. C.; Li, T. C.; Lin, C. W.

2012-02-01

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

NASA Astrophysics Data System (ADS)

Lin, Jianliang; Chistyakov, Roman

2017-02-01

Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

PubMed Central

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-01-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as themore » AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.« less

Thermally stable diamond brazing

DOEpatents

Radtke, Robert P [Kingwood, TX

2009-02-10

A cutting element and a method for forming a cutting element is described and shown. The cutting element includes a substrate, a TSP diamond layer, a metal interlayer between the substrate and the diamond layer, and a braze joint securing the diamond layer to the substrate. The thickness of the metal interlayer is determined according to a formula. The formula takes into account the thickness and modulus of elasticity of the metal interlayer and the thickness of the TSP diamond. This prevents the use of a too thin or too thick metal interlayer. A metal interlayer that is too thin is not capable of absorbing enough energy to prevent the TSP diamond from fracturing. A metal interlayer that is too thick may allow the TSP diamond to fracture by reason of bending stress. A coating may be provided between the TSP diamond layer and the metal interlayer. This coating serves as a thermal barrier and to control residual thermal stress.

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Fritze, S.; Drechsel, P.; Stauss, P.; Rode, P.; Markurt, T.; Schulz, T.; Albrecht, M.; Bläsing, J.; Dadgar, A.; Krost, A.

2012-06-01

Thin AlGaN interlayers have been grown into a thick GaN stack on Si substrates to compensate tensile thermal stress and significantly improve the structural perfection of the GaN. In particular, thicker interlayers reduce the density in a-type dislocations as concluded from x-ray diffraction (XRD) measurements. Beyond an interlayer thickness of 28 nm plastic substrate deformation occurs. For a thick GaN stack, the first two interlayers serve as strain engineering layers to obtain a crack-free GaN structure, while a third strongly reduces the XRD ω-(0002)-FWHM. The vertical strain and quality profile determined by several XRD methods demonstrates the individual impact of each interlayer.

High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Nagatomi, Takaharu; Morishita, Tomohiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2017-10-01

We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo-convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick high-temperature layer (1250 °C), and a 3.2-μm-thick medium-temperature layer (1110 °C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10-12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations.

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

NASA Astrophysics Data System (ADS)

Sang, Liwen; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

2015-03-01

InxGa1-xN, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In0.08Ga0.92N is achieved with a high hole concentration of more than 1018 cm-3. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

Low temperature aluminum nitride thin films for sensory applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yarar, E.; Zamponi, C.; Piorra, A.

2016-07-15

A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/Vmore » up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.« less

Mechanical competence of ovariectomy-induced compromised bone after single or combined treatment with high-frequency loading and bisphosphonates

PubMed Central

Camargos G. V.; Bhattacharya P.; van Lenthe G. H.; Del Bel Cury A. A.; Naert I.; Duyck J.; Vandamme K.

2015-01-01

Osteoporosis leads to increased bone fragility, thus effective approaches enhancing bone strength are needed. Hence, this study investigated the effect of single or combined application of high-frequency (HF) loading through whole body vibration (WBV) and alendronate (ALN) on the mechanical competence of ovariectomy-induced osteoporotic bone. Thirty-four female Wistar rats were ovariectomized (OVX) or sham-operated (shOVX) and divided into five groups: shOVX, OVX-shWBV, OVX-WBV, ALN-shWBV and ALN-WBV. (Sham)WBV loading was applied for 10 min/day (130 to 150 Hz at 0.3g) for 14 days and ALN at 2 mg/kg/dose was administered 3x/week. Finite element analysis based on micro-CT was employed to assess bone biomechanical properties, relative to bone micro-structural parameters. HF loading application to OVX resulted in an enlarged cortex, but it was not able to improve the biomechanical properties. ALN prevented trabecular bone deterioration and increased bone stiffness and bone strength of OVX bone. Finally, the combination of ALN with HF resulted in an increased cortical thickness in OVX rats when compared to single treatments. Compared to HF loading, ALN treatment is preferred for improving the compromised mechanical competence of OVX bone. In addition, the association of ALN with HF loading results in an additive effect on the cortical thickness. PMID:26027958

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

NASA Astrophysics Data System (ADS)

Feng, Liang; Ping, Chen; De-Gang, Zhao; De-Sheng, Jiang; Zhi-Juan, Zhao; Zong-Shun, Liu; Jian-Jun, Zhu; Jing, Yang; Wei, Liu; Xiao-Guang, He; Xiao-Jing, Li; Xiang, Li; Shuang-Tao, Liu; Hui, Yang; Li-Qun, Zhang; Jian-Ping, Liu; Yuan-Tao, Zhang; Guo-Tong, Du

2016-05-01

We have investigated the electron affinity of Si-doped AlN films (N Si = 1.0 × 1018-1.0 × 1019 cm-3) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

JPRS Report, Science and Technology Japan, 3rd Microelectronics Symposium

DTIC Science & Technology

1990-04-20

Electric Power Insulating Substrate; Degree of Sintering, Thermal Conductivity of Aluminum Nitride Ultrafine Particles ; Effect of Baking Pressure on AlN Sintering; Thick Film Resistor for Use in AlN Ceramics.

Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

NASA Astrophysics Data System (ADS)

He, Xiao-Guang; Zhao, De-Gang; Jiang, De-Sheng; Zhu, Jian-Jun; Chen, Ping; Liu, Zong-Shun; Le, Ling-Cong; Yang, Jing; Li, Xiao-Jing; Zhang, Shu-Ming; Yang, Hui

2015-09-01

AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas (2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the high-temperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 1013 cm-2, electron mobility of 2101 cm2·V-1·s-1, and square resistance of 249 Ω is obtained. Project support by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

NASA Astrophysics Data System (ADS)

Lemettinen, J.; Okumura, H.; Kim, I.; Rudzinski, M.; Grzonka, J.; Palacios, T.; Suihkonen, S.

2018-04-01

We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.

Micromachined ultrasonic transducers with piezoelectric aluminum nitride thin films

NASA Astrophysics Data System (ADS)

Wang, Qianghua

In this research, a laboratory prototype of micromachined ultrasonic transducer (MUT) has been designed and fabricated with the application of piezoelectric aluminum nitride (AlN) thin films. The fabrication process of MUT device, especially the deposition of AlN thin film, is compatible with a standard integrated circuits (IC) technology. Preliminary results have demonstrated the feasibility of AlN thin film applied in MUT for medical ultrasonic detection. AlN thin film was grown on aluminum metal layer by plasma source molecular beam epitaxy (PSMBE) system. X-ray diffraction (XRD) shows the films exhibit a high c-axis texture for a thickness of 1.2 mum grown at a temperature of 450°C. For the AlN film of 1.20 mum, residual stress was a compressive stress of 883 Mpa, which reduced with increasing thickness of the film. Based on the fundamentals of vibration and piezoelectricity, MUT device including silicon resonator and AlN sandwich structure has been designed. A prototype of 8 x 8 devices on a 3″ silicon (100) wafer has been fabricated. A series of experiments were conducted to find the process flow and the optimum process parameters. MUT devices were characterized by optical, electrical, and acoustic measurements. The measured resonant frequencies AlN MUT and PVDF MUT devices were larger than the calculated value in order of 5% to 12%. The ratios of the flexural frequencies to the fundamental frequency were much close to the MUT design model within a 3% error for AlN MUT devices. Resonant frequencies of AlN MUT devices were also verified by the reflection coefficient with a network analyzer and the electrical impedance with an impendence analyzer. Effective coupling factors of AlN MUT devices were determined to be 0.18 from the resonant frequency and the antiresonant frequency. Fractional bandwidth of an AlN MUT was 8.30% at the center frequency of 2.65 MHz. Pressure sensitivity was stable between 14 mV/MPa and 18 mV/MPa independent on the pressure intensity and the distance from the ultrasonic source to the AlN MUT device. Immersion measurement, device linear characteristics, and performance of AlN MUT device exhibit a great potential for the state-of-art ultrasonic camera.

Method and apparatus for aluminum nitride monocrystal boule growth

DOEpatents

Wang, Shaoping

2009-04-28

A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source material and a growing AlN crystal boule. This crucible has a thin wall thickness in at least that portion housing the growing AlN crystal boule. Other components include a susceptor, in case of an inductive heating, or a heater, in case of a resistive heating, a thermal insulation enclosing the susceptor or heater effective to provide a thermal gradient inside the crucible in the range of 5-100.degree. C./cm and a furnace chamber capable of being operated from a vacuum (<0.1 torr) to a gas pressure of at least 4000 torr through filling or flowing a nitrogen gas or a mixture of nitrogen gas and argon gas. The high temperatures contribute to a high boule growth rate and the thin wall thickness contributes to reduced imparted stress during boule removal.

Effect of sputtered titanium interlayers on the properties of nanocrystalline diamond films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Cuiping, E-mail: licp226@126.com, E-mail: limingji@163.com; Li, Mingji, E-mail: licp226@126.com, E-mail: limingji@163.com; Wu, Xiaoguo

2016-04-07

Ti interlayers with different thicknesses were sputtered on Si substrates and then ultrasonically seeded in a diamond powder suspension. Nanocrystalline diamond (NCD) films were deposited using a dc arc plasma jet chemical vapor deposition system on the seeded Ti/Si substrates. Atomic force microscopy and scanning electron microscopy tests showed that the roughness of the prepared Ti interlayer increased with increasing thickness. The effects of Ti interlayers with various thicknesses on the properties of NCD films were investigated. The results show nucleation, growth, and microstructure of the NCD films are strongly influenced by the Ti interlayers. The addition of a Timore » interlayer between the Si substrate and the NCD films can significantly enhance the nucleation rate and reduce the surface roughness of the NCD. The NCD film on a 120 nm Ti interlayer possesses the fastest nucleation rate and the smoothest surface. Raman spectra of the NCD films show trans-polyacetylene relevant peaks reduce with increasing Ti interlayer thickness, which can owe to the improvement of crystalline at grain boundaries. Furthermore, nanoindentation measurement results show that the NCD film on a 120 nm Ti interlayer displays a higher hardness and elastic modulus. High resolution transmission electron microscopy images of a cross-section show that C atoms diffuse into the Ti layer and Si substrate and form TiC and SiC hard phases, which can explain the enhancement of mechanical properties of NCD.« less

Interfacial coherency stress distribution in TiN/AlN bilayer and multilayer films studied by FEM analysis

PubMed Central

Chawla, Vipin; Holec, David; Mayrhofer, Paul H.

2012-01-01

The development of interfacial coherency stresses in TiN/AlN bilayer and multilayer films was investigated by finite element method (ABAQUS) using the four-node bilinear quadrilateral axisymmetric element CAX4R. The TiN and AlN layers are always in compression and tension at the interface, respectively, as may be expected from the fact TiN has larger lattice parameter than AlN. Both, the bi-layer and the multilayer stacks bend due to the coherency stresses. For the TiN/AlN bilayer system, the curvature of the bending is largest for the TiN/AlN thickness ratios ∼0.5 and ∼2 (at which one of the two layers is fully in compression or tension), while it is smaller for the layers with the same thickness (at which both layers posses regions with compressive as well as tensile stresses). This stress distribution over the bi-layer thickness is shown to be strongly influenced by the presence and the properties of a substrate. Furthermore, the coherency stress profile and specimen curvature of a TiN/AlN multilayer system was studied as a function of the top-most layer thickness. The curvature is maximum for equal number of TiN and AlN layers, and decreases with increasing the number of TiN/AlN periods. Within the growth of an additional TiN/AlN bilayer, the curvature first decreases to zero for a vertically symmetrical geometry over the layers when the TiN layer growth is finished (e.g. for (n + 1) layers of TiN and n layers of AlN). At this stage, the coherency stresses in TiN and AlN are same in each layer type (independent on the layer position). The growth of the second half of the TiN/AlN bi-layer (i.e. the AlN) to finish the period, again bends the specimen, and generates a non-uniform stress distribution. This suggests that the top layer as well as the overall specimen geometry plays a critical role on the actual coherency stress profile. PMID:27570370

Effect of capping layer on interlayer coupling in synthetic spin valves

NASA Astrophysics Data System (ADS)

Li, Kebin; Qiu, Jinjun; Han, Guchang; Guo, Zaibing; Zheng, Yuankai; Wu, Yihong; Li, Jinshan

2005-01-01

The magnetic and transport properties of high quality synthetic spin-valves with the structure of Ta/NiFe/IrMn/CoFe/Ru/CoFe/NOL/CoFe/Cu/CoFe/CL were studied by using magnetoresistance measurements. Here Ti, Hf, and Al are used as the capping layer. It is found that both the thickness and materials properties of the capping layers can affect the interlayer coupling field. The interlayer coupling field oscillates weakly with respect to the thickness of the Ti and Hf capping layers. Extremely strong ferromagnetic coupling has been observed when the thickness of the Al capping layer is in a certain range where resonant exchange coupling takes place. The strength of the interlayer coupling is inversely proportional to the square of the thickness of the spacer. It is a typical characteristic of quantum size effect.

Experimental and Modeling Studies on the Microstructures and Properties of Oxidized Aluminum Nitride Ceramic Substrates

NASA Astrophysics Data System (ADS)

Cao, Ye; Xu, Haixian; Zhan, Jun; Zhang, Hao; Wei, Xin; Wang, Jianmin; Cui, Song; Tang, Wenming

2018-05-01

Oxidation of aluminum nitride (AlN) ceramic substrates doped with 2 wt.% Y2O3 was performed in air at temperatures ranging from 1000 to 1300 °C for various lengths of time. Microstructure, bending strength, and thermal conductivity of the oxidized AlN substrates were studied experimentally and also via mathematical models. The results show that the oxide layer formed on the AlN substrates is composed of α-Al2O3 nanocrystallines and interconnected micropores. Longitudinal and transverse cracks are induced in the oxide layer under tensile and shear stresses, respectively. Intergranular oxidation of the AlN grains close to the oxide layer/AlN interface also occurs, leading to widening and cracking of the AlN grain boundaries. These processes result in the monotonous degradation of bending strength and thermal conductivity of the oxidized AlN substrates. Two mathematic models concerning these properties of the oxidized AlN substrates versus the oxide layer thickness were put forward. They fit well with the experimental results.

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, Takeshi, E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, Noboru; Osada, Takenori

2015-08-15

This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resultingmore » MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.« less

Large Frequency Change with Thickness in Interlayer Breathing Mode—Significant Interlayer Interactions in Few Layer Black Phosphorus

NASA Astrophysics Data System (ADS)

Luo, Xin; Lu, Xin; Koon, Gavin Kok Wai; Castro Neto, Antonio H.; Özyilmaz, Barbaros; Xiong, Qihua; Quek, Su Ying

2015-06-01

Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical properties and its full range of applications are still being uncovered. In this paper, we present a theoretical and experimental investigation of phonon properties in few-layer BP, focusing on the low-frequency regime corresponding to interlayer vibrational modes. We show that the interlayer breathing mode A3g shows a large redshift with increasing thickness; the experimental and theoretical results agreeing well. This thickness dependence is two times larger than that in the chalcogenide materials such as few-layer MoS2 and WSe2, because of the significantly larger interlayer force constant and smaller atomic mass in BP. The derived interlayer out-of-plane force constant is about 50% larger than that in graphene and MoS2. We show that this large interlayer force constant arises from the sizable covalent interaction between phosphorus atoms in adjacent layers, and that interlayer interactions are not merely of the weak van der Waals type. These significant interlayer interactions are consistent with the known surface reactivity of BP, and have been shown to be important for electric-field induced formation of Dirac cones in thin film BP.

Large Frequency Change with Thickness in Interlayer Breathing Mode--Significant Interlayer Interactions in Few Layer Black Phosphorus.

PubMed

Luo, Xin; Lu, Xin; Koon, Gavin Kok Wai; Castro Neto, Antonio H; Özyilmaz, Barbaros; Xiong, Qihua; Quek, Su Ying

2015-06-10

Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical properties and its full range of applications are still being uncovered. In this paper, we present a theoretical and experimental investigation of phonon properties in few-layer BP, focusing on the low-frequency regime corresponding to interlayer vibrational modes. We show that the interlayer breathing mode A(3)g shows a large redshift with increasing thickness; the experimental and theoretical results agree well. This thickness dependence is two times larger than that in the chalcogenide materials, such as few-layer MoS2 and WSe2, because of the significantly larger interlayer force constant and smaller atomic mass in BP. The derived interlayer out-of-plane force constant is about 50% larger than that of graphene and MoS2. We show that this large interlayer force constant arises from the sizable covalent interaction between phosphorus atoms in adjacent layers and that interlayer interactions are not merely of the weak van der Waals type. These significant interlayer interactions are consistent with the known surface reactivity of BP and have been shown to be important for electric-field induced formation of Dirac cones in thin film BP.

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, P.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2016-03-15

In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al{sub 0.2}Ga{sub 0.8}N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of amore » LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.« less

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

NASA Astrophysics Data System (ADS)

Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

2012-10-01

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

Piezoelectric thin films and their applications for electronics

NASA Astrophysics Data System (ADS)

Yoshino, Yukio

2009-03-01

ZnO and AlN piezoelectric thin films have been studied for applications in bulk acoustic wave (BAW) resonator. This article introduces methods of forming ZnO and AlN piezoelectric thin films by radio frequency sputtering and applications of BAW resonators considering the relationship between the crystallinity of piezoelectric thin films and the characteristics of the BAW resonators. Using ZnO thin films, BAW resonators were fabricated for a contour mode at 3.58 MHz and thickness modes from 200 MHz to 5 GHz. The ZnO thin films were combined with various materials, substrates, and thin films to minimize the temperature coefficient of frequency (TCF). The minimum TCF of BAW resonators was approximately 2 ppm/°C in the range -20 to 80 °C. The electromechanical coupling coefficient (k2) in a 1.9 GHz BAW resonator was 6.9%. Using AlN thin films, 5-20 GHz BAW resonators with an ultrathin membrane were realized. The membrane thickness of a 20 GHz BAW resonator was about 200 nm, k2 was 6.1%, and the quality factor (Q) was about 280. Q decreased with increasing resonant frequency. The value of k2 is almost the same for 5-20 GHz resonators. This result could be obtained by improving the thickness uniformity, by controlling internal stress of thin films, and by controlling the crystallinity of AlN piezoelectric thin film.

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

NASA Astrophysics Data System (ADS)

Shida, K.; Takeuchi, S.; Tohei, T.; Miyake, H.; Hiramatsu, K.; Sumitani, K.; Imai, Y.; Kimura, S.; Sakai, A.

2018-04-01

This work quantitatively assessed the three-dimensional distribution of crystal lattice distortions in an epitaxial AlN thick film grown on a trench-patterned template, using nanobeam X-ray diffraction. Position-dependent ω-2θ-φ mapping clearly demonstrated local tilting, spacing and twisting of lattice planes as well as fluctuations in these phenomena on a sub-micrometer scale comparable to the pitch of the trench-and-terrace patterning. Analysis of the crystal lattice distortion in the depth direction was performed using a newly developed method in which the X-ray nanobeam diffracted from the sample surface to specific depths can be selectively detected by employing a Pt wire profiler. This technique generated depth-resolved ω-2θ-φ maps confirming that fluctuations in lattice plane tilting and spacing greatly depend on the dislocation distribution and the history of the AlN epitaxial growth on the trench-patterned structure. It was also found that both fluctuations were reduced on approaching the AlN surface and, in particular, were sharply reduced at specific depths in the terrace regions. These sharp reductions are attributed to the formation of sacrificial zones with degraded crystal quality around the trenches and possibly lead to raising the crystal quality near the surface of the AlN film.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Effects of combined elcatonin and alendronate treatment on the architecture and strength of bone in ovariectomized rats.

PubMed

Ogawa, Koko; Hori, Masayuki; Takao, Ryoko; Sakurada, Toyozo

2005-01-01

We examined the combined effects of elcatonin (ECT) and alendronate (ALN) on bone mass, architecture, and strength in ovariectomized (OVX) rats. Fifty female Sprague Dawley rats, aged 13 weeks, were divided into Sham, OVX, OVX+ECT, OVX+ALN, and OVX+ECT+ALN groups (n = 10). Immediately after ovariectomy, ECT was administered at a dose of 15 units (U)/kg three times a week, and ALN was administered daily at a dose of 2.0 microg/kg, subcutaneously for 12 weeks. The three-dimensional architecture of the bone in the distal femoral metaphysis was analyzed using a microfocus X-ray computed tomography system (microCT), and bone strength was measured using a material-testing machine. Trabecular bone volume (BV/TV) and number (Tb.N) were significantly greater in the OVX+ECT and OVX+ALN groups than in the OVX group. In the OVX+ECT+ALN group, BV/TV and Tb.N were significantly greater when compared with those in the OVX+ECT and OVX+ALN groups. Trabecular thickness (Tb.Th) was significantly greater in the OVX+ECT+ALN group than in the OVX+ALN group. With regard to bone strength, the compression strength in the femoral metaphysis was significantly lower in the OVX group than in the Sham group. The reduction of compression strength was slightly lower in the OVX+ECT and OVX+ALN groups. In the OVX+ECT+ALN group, the compression strength in the femoral metaphysis significantly increased when compared with the OVX and OVX+ECT groups. These results suggest that the combined treatment of ECT and ALN does not alter the individual effects of each drug and that it exerts an additive effect on trabecular architecture and bone strength in OVX rats.

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer.

PubMed

Zhang, Lichun; Li, Qingshan; Shang, Liang; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

2013-07-15

n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the n-ZnO/p-GaN diodes display a broad blue-violet emission centered at 430 nm, whereas the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared with the AlN interlayer, which is blocking both electron and hole at hetero-interface, the utilization of ZnS as intermediate layer can lower the barrier height for holes and keep an effective blocking for electron. Thus, an improved UV EL intensity and a low turn-on voltage (~5V) were obtained. The results were studied by peak-deconvolution with Gaussian functions and were discussed using the band diagram of heterojunctions.

NiCrNx interlayer thickness dependence of spectral performance and environmental durability of protected-silver mirrors

NASA Astrophysics Data System (ADS)

Xu, Xu; Li, Bincheng; He, Wenyan; Wang, Changjun; Wei, Ming

2018-04-01

Gemini-style protected-silver mirror (Sub / NiCrNx / Ag / NiCrNx / SiNx / Air) is a suitable choice for optical instruments requiring both long-term environmental durability and high broadband reflectance. Three Gemini-style protected-silver mirrors with NiCrNx interlayer thicknesses between 0.1 and 0.6 nm were prepared by magnetron sputtering, and the dependences of spectral properties and environmental durability of these protected-silver mirrors on the thickness of NiCrNx interlayer between the silver layer and SiNx layer were investigated in-depth. The reflectance, transmittance and total scattering loss measurements, optical microscope, and scanning electron microscope imaging were employed to characterize the spectral properties and surface morphology, and accelerated environmental tests, including humidity test and salt fog test, were applied to investigate the environmental durability. The experimental results showed that both optical and corrosion-resistant properties of protected-silver mirrors were NiCrNx interlayer thickness dependent, and an optimum NiCrNx interlayer thickness should be ˜0.3 nm for Gemini-style protected-silver mirrors to have reasonably both high reflectance in a broadband spectral range from visible to far infrared and good corrosion resistance for long-lifetime applications in harsh environments.

Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor

NASA Astrophysics Data System (ADS)

Baker, Troy; Mayo, Ashley; Veisi, Zeinab; Lu, Peng; Schmitt, Jason

2014-10-01

Aluminum nitride (AlN) was grown on c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor. The surface morphology, crystal quality, and growth rate were investigated as a function of growth temperature in the range of 1450-1575 °C. AlN templates grown to a thickness of 1 μm were optimized with double axis X-ray diffraction (XRD) rocking curve full width half maximums (FWHMs) of 135″ for the (002) and 513″ for the (102).

High-quality AlN grown on a thermally decomposed sapphire surface

NASA Astrophysics Data System (ADS)

Hagedorn, S.; Knauer, A.; Brunner, F.; Mogilatenko, A.; Zeimer, U.; Weyers, M.

2017-12-01

In this study we show how to realize a self-assembled nano-patterned sapphire surface on 2 inch diameter epi-ready wafer and the subsequent AlN overgrowth both in the same metal-organic vapor phase epitaxial process. For this purpose in-situ annealing in H2 environment was applied prior to AlN growth to thermally decompose the c-plane oriented sapphire surface. By proper AlN overgrowth management misoriented grains that start to grow on non c-plane oriented facets of the roughened sapphire surface could be overcome. We achieved crack-free, atomically flat AlN layers of 3.5 μm thickness. The layers show excellent material quality homogeneously over the whole wafer as proved by the full width at half maximum of X-ray measured ω-rocking curves of 120 arcsec to 160 arcsec for the 002 reflection and 440 arcsec to 550 arcsec for the 302 reflection. The threading dislocation density is 2 ∗ 109 cm-2 which shows that the annealing and overgrowth process investigated in this work leads to cost-efficient AlN templates for UV LED devices.

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

NASA Astrophysics Data System (ADS)

Lemettinen, J.; Okumura, H.; Kim, I.; Kauppinen, C.; Palacios, T.; Suihkonen, S.

2018-04-01

We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈 1 bar 1 0 0 〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1 ° and 4 ° miscut substrates were found to be 20,000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1 ° towards 〈 1 bar 1 0 0 〉 . The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (0 0 2) and (1 0 2) reflections, respectively. The root mean square roughness was 0.4 nm for a 2 μm × 2 μm atomic force microscope scan.

Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface

NASA Astrophysics Data System (ADS)

Huang, Liegen; Li, Yuan; Wang, Wenliang; Li, Xiaochan; zheng, Yulin; Wang, Haiyan; Zhang, Zichen; Li, Guoqiang

2018-03-01

High-quality AlN epitaxial films have been grown on Si substrates by optimizing the hydrofluoric acid (HF) solution for cleaning of Si substrates. Effect of the Si substrate surface on the surface morphology and structural property of AlN epitaxial films is investigated in detail. It is revealed that as the concentration of HF solution increases from 0 to 2.0%, the surface morphology and the crystalline quality are initially improved and then get worse, and show an optimized value at 1.5%. The as-grown ∼200 nm-thick AlN epitaxial films on Si substrates grown with HF solution of 1.5% reveal the root-mean-square (RMS) surface roughness of 0.49 nm and the full-width at half-maximum for AlN(0002) X-ray rocking curve of 0.35°, indicating the smooth surface morphology and the high crystalline quality. The corresponding mechanism is proposed to interpret the effect of Si substrate surface on surface morphology and structural property of AlN epitaxial films, and provides an effective approach for the perspective fabrication of AlN-based devices.

AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range

NASA Astrophysics Data System (ADS)

Usikov, Alexander S.; Shapvalova, Elizaveta V.; Melnik, Yuri V.; Ivantsov, Vladimir A.; Dmitriev, Vladimir A.; Collins, Charles J.; Sampath, Anand V.; Garrett, Gregory A.; Shen, Paul H.; Wraback, Michael

2004-12-01

In this paper we report on the fabrication and characterization of GaN, AlGaN, and AlN layers grown by hydride vapor phase epitaxy (HVPE). The layers were grown on 2-inch and 4-inch sapphire and 2-inch silicon carbide substrates. Thickness of the GaN layers was varied from 2 to 80 microns. Surface roughness, Rms, for the smoothest GaN layers was less than 0.5 nm, as measured by AFM using 10 μm x 10 μm scans. Background Nd-Na concentration for undoped GaN layers was less than 1x1016 cm-3. For n-type GaN layers doped with Si, concentration Nd-Na was controlled from 1016 to 1019 cm-3. P-type GaN layers were fabricated using Mg doping with concentration Na-Nd ranging from 4x1016 to 3x1018 cm-3, for various samples. Zn doping also resulted in p-type GaN formation with concnetration ND-NA in the 1017 cm-3 range. UV transmission, photoluminescence, and crystal structure of AlGaN layers with AlN concentration up to 85 mole.% were studied. Dependence of optical band gap on AlGaN alloy composition was measured for the whole composition range. Thick (up to 75 microns) crack-free AlN layers were grown on SiC substrates. Etch pit density for such thick AlN layers was in the 107 cm-2 range.

Methods for improved growth of group III nitride buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphologymore » of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).« less

Infrared blocking, microwave and terahertz low-loss transmission AlN films grown on flexible polymeric substrates

NASA Astrophysics Data System (ADS)

Rudenko, E.; Tsybrii, Z.; Sizov, F.; Korotash, I.; Polotskiy, D.; Skoryk, M.; Vuichyk, M.; Svezhentsova, K.

2017-04-01

Aluminum nitride (AlN) film coatings on flexible substrates (polymeric Teflon, Mylar) have been obtained using a hybrid helicon-arc ion-plasma deposition technique with high adhesion of coatings. Studies of optical, morphological, and structural properties of AlN films have been carried out. It was found that AlN coatings on Teflon and Mylar thin-film substrates substantially suppress transmission of infrared (IR) radiation within the spectral range λ ˜ 5-20 μm at certain technological parameters and thickness of AlN. Transmission in THz regions by using quasioptics attains T ≈ 79%-95%, and losses measured in the channels within the microwave region 2 to 36 GHz are <0.06 dB. The obtained composite structures (AlN coatings on Teflon and Mylar thin-film substrates), due to a high thermal conductivity of AlN, could be used as efficient blocking structures in the infrared spectral range ("infrared stealth") withdrawing the heat from filters warmed by IR radiation. At the same time, they can be used as the transparent ones in the microwave and THz regions, which can be important for low-temperature detector components of navigation, positioning, and telecommunication systems due to reducing the background noise.

Density-functional theory study of ionic inhomogeneity in metal clusters using SC-ISJM

NASA Astrophysics Data System (ADS)

Payami, Mahmoud; Mahmoodi, Tahereh

2017-12-01

In this work we have applied the recently formulated self-compressed inhomogeneous stabilized jellium model [51] to describe the equilibrium electronic and geometric properties of atomic-closed-shell simple metal clusters of AlN (N = 13, 19, 43, 55, 79, 87, 135, 141), NaN, and CsN (N = 9, 15, 27, 51, 59, 65, 89, 113). To validate the results, we have also performed first-principles pseudo-potential calculations and used them as our reference. In the model, we have considered two regions consisting of ;surface; and ;inner; ones, the border separating them being sharp. This generalization makes possible to decouple the relaxations of different parts of the system. The results show that the present model correctly predicts the size reductions seen in most of the clusters. It also predicts increase in size of some clusters, as observed from first-principles results. Moreover, the changes in inter-layer distances, being as contractions or expansions, are in good agreement with the atomic simulation results. For a more realistic description of the properties, it is possible to improve the method of choosing the surface thicknesses or generalize the model to include more regions than just two.

Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teii, K., E-mail: teii@asem.kyushu-u.ac.jp; Ito, H.; Katayama, N.

2015-02-07

Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp{sup 2}-bonded boron nitride (sp{sup 2}BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp{sup 2}BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 10{sup 4} at ±10 V of biasing with increasing the sp{sup 2}BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation ofmore » the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp{sup 2}BN thickness. The forward current follows the Frenkel-Poole emission model in the sp{sup 2}BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp{sup 2}BN interlayer, while that of the major carriers for forward current is much less affected.« less

Thickness effects of yttria-doped ceria interlayers on solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Fan, Zeng; An, Jihwan; Iancu, Andrei; Prinz, Fritz B.

2012-11-01

Determining the optimal thickness range of the interlayed yttria-doped ceria (YDC) films promises to further enhance the performance of solid oxide fuel cells (SOFCs) at low operating temperatures. The YDC interlayers are fabricated by the atomic layer deposition (ALD) method with one super cycle of the YDC deposition consisting of 6 ceria deposition cycles and one yttria deposition cycle. YDC films of various numbers of ALD super cycles, ranging from 2 to 35, are interlayered into bulk fuel cells with a 200 um thick yttria-stabilized zirconia (YSZ) electrolyte. Measurements and analysis of the linear sweep voltammetry of these fuel cells reveal that the performance of the given cells is maximized at 10 super cycles. Auger elemental mapping and X-ray photoelectron spectroscopy (XPS) techniques are employed to determine the film completeness, and they verify 10 super cycles of YDC to be the critical thickness point. This optimal YDC interlayer condition (6Ce1Y × 10 super cycles) is applied to the case of micro fuel cells as well, and the average performance enhancement factor is 1.4 at operating temperatures of 400 and 450 °C. A power density of 1.04 W cm-2 at 500 °C is also achieved with the optimal YDC recipe.

Grain size engineering for ferroelectric Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films by an insertion of Al{sub 2}O{sub 3} interlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Han Joon; Park, Min Hyuk; Kim, Yu Jin

2014-11-10

The degradation of ferroelectric (FE) properties of atomic layer deposited Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films with increasing thickness was mitigated by inserting 1 nm-thick Al{sub 2}O{sub 3} interlayer at middle position of the thickness of the FE film. The large P{sub r} of 10 μC/cm{sup 2}, which is 11 times larger than that of single layer Hf{sub 0.5}Zr{sub 0.5}O{sub 2} film with equivalent thickness, was achieved from the films as thick as 40 nm. The Al{sub 2}O{sub 3} interlayer could interrupt the continual growth of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films, and the resulting decrease of grain size prevented the formation of non-ferroelectricmore » monoclinic phase. The Al{sub 2}O{sub 3} interlayer also largely decreased the leakage current of the Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films.« less

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Bui, Hao, E-mail: H.VanBui@utwente.nl; Wiggers, Frank B.; Gupta, Anubha

2015-01-01

The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution ofmore » the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup ¯}0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.« less

Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazlov, N., E-mail: n.bazlov@spbu.ru; Pilipenko, N., E-mail: nelly.pilipenko@gmail.com; Vyvenko, O.

2016-06-17

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained trapsmore » of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.« less

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

NASA Astrophysics Data System (ADS)

Lu, Yuan; Cong, Guangwei; Liu, Xianglin; Lu, Da-Cheng; Zhu, Qinsheng; Wang, Xiaohui; Wu, Jiejun; Wang, Zhanguo

2004-11-01

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 μm thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 μm thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously.

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

PubMed

Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

2016-02-05

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

NASA Astrophysics Data System (ADS)

Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

2017-02-01

Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

PubMed

Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

2014-12-10

Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alden, D.; Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin; Guo, W.

Periodically poled AlN thin films with submicron domain widths were fabricated for nonlinear applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor deposition growth of AlN in combination with laser interference lithography was developed for making a nanoscale lateral polarity structure (LPS) with domain size down to 600 nm. The Al-polar and N-polar domains were identified by wet etching the periodic LPS in a potassium hydroxide solution and subsequent scanning electron microscopy (SEM) characterization. Fully coalesced and well-defined vertical interfaces between the adjacent domains were established by cross-sectional SEM. AlN LPSs were mechanically polished and surface roughness with amore » root mean square value of ∼10 nm over a 90 μm × 90 μm area was achieved. 3.8 μm wide and 650 nm thick AlN LPS waveguides were fabricated. The achieved domain sizes, surface roughness, and waveguides are suitable for second harmonic generation in the UVC spectrum.« less

Next Generation Ceramic Substrate Fabricated at Room Temperature.

PubMed

Kim, Yuna; Ahn, Cheol-Woo; Choi, Jong-Jin; Ryu, Jungho; Kim, Jong-Woo; Yoon, Woon-Ha; Park, Dong-Soo; Yoon, Seog-Young; Ma, Byungjin; Hahn, Byung-Dong

2017-07-26

A ceramic substrate must not only have an excellent thermal performance but also be thin, since the electronic devices have to become thin and small in the electronics industry of the next generation. In this manuscript, a thin ceramic substrate (thickness: 30-70 µm) is reported for the next generation ceramic substrate. It is fabricated by a new process [granule spray in vacuum (GSV)] which is a room temperature process. For the thin ceramic substrates, AlN GSV films are deposited on Al substrates and their electric/thermal properties are compared to those of the commercial ceramic substrates. The thermal resistance is significantly reduced by using AlN GSV films instead of AlN bulk-ceramics in thermal management systems. It is due to the removal of a thermal interface material which has low thermal conductivity. In particular, the dielectric strengths of AlN GSV films are much higher than those of AlN bulk-ceramics which are commercialized, approximately 5 times. Therefore, it can be expected that this GSV film is a next generation substrate in thermal management systems for the high power application.

Structural state scale-dependent physical characteristics and endurance of cermet composite for cutting metal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ovcharenko, V. E., E-mail: ovcharenko.ove45@mail.ru; Ivanov, Yu. F., E-mail: ivanov.yufi55@mail.ru; Mohovikov, A. A., E-mail: mohovikov.maa28@rambler.ru

A structural-phase state developed on the surface of a TiC/Ni–Cr–Al cermet alloy under superfast heating and cooling produced by pulse electron beam melting has been presented. The effect of the surface’s structural state multimodality on the temperature dependencies of the friction and endurance of the cermet tool in cutting metal has been investigated. The high-energy flux treatment of subsurface layers by electron beam pulses in argon-containing gas discharge plasma serves to improve the endurance of metal cutting tools manifold (by a factor of 6), to reduce the friction via precipitation of secondary 200 nm carbides in binder interlayers. It ismore » possible to improve the cermet tool endurance for cutting metal by a factor of 10–12 by irradiating the cermet in a reactive nitrogen-containing atmosphere with the ensuing precipitation of nanosize 50 nm AlN particles in the binder interlayers.« less

The effects of bone remodeling inhibition by alendronate on three-dimensional microarchitecture of subchondral bone tissues in guinea pig primary osteoarthrosis.

PubMed

Ding, Ming; Danielsen, Carl Christian; Hvid, Ivan

2008-01-01

We assessed whether increase of subchondral bone density enhances cartilage stress during impact loading, leading to progressive cartilage degeneration and accelerated osteoarthrosis (OA) progression. Sixty-six male guinea pigs were randomly divided into six groups. During a 9-week treatment period, four groups received twice-weekly subcutaneous injections of alendronate (ALN) in two doses: two groups received 10 microg/kg and two groups received 50 microg/kg. The two control groups received vehicle. After 9 weeks, one 10 microg/kg ALN group, one 50 microg/kg ALN group, and one control group were killed. The remaining three groups (17-week groups) were left for an additional 8 weeks, receiving the same treatment regimen before death. The left proximal tibiae were scanned by micro-computed tomography to quantify the microarchitecture of subchondral bone, followed by mechanical testing and determination of collagen and mineral. The control groups had typical OA-related cartilage degeneration at 9 and 17 weeks, whereas the 50 microg/kg ALN group had even worse degeneration in the medial condyle. It is unclear whether there is a direct or a secondary effect of ALN on the cartilage. The 9-week ALN group had significantly greater subchondral plate thickness. The 9- and 17-week groups had similar changes of cancellous bone microarchitecture, with greater volume fraction and connectivity and an extremely plate-like structure. The 9-week ALN group had greater bone mineral concentration, and the 17-week ALN group had reduced collagen concentration and greater mineral concentration. Treatment with ALN did not significantly change the mechanical properties of the cancellous bone.

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

PubMed

Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

2013-01-18

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si 3N 4 passivation

NASA Astrophysics Data System (ADS)

Cheng, Kai; Degroote, S.; Leys, M.; Medjdoub, F.; Derluyn, J.; Sijmus, B.; Germain, M.; Borghs, G.

2011-01-01

AlN/GaN heterostructures are very attractive because their theoretical two-dimensional electron gas (2DEG) density may exceed 5×10 13/cm 2[1]. However, there are very few reports on AlN/GaN heterostructures grown by MOVPE. In this work, we show that good quality AlN layers can be grown on GaN at a relatively low growth temperature when TMIn is added to the carrier gas flow as a surfactant. Analysis by RBS revealed that at a growth temperature of 900 °C or higher no Indium is actually incorporated. Various thicknesses of AlN are grown, from 2 to 8 nm. Finally, 2-3 nm in situ Si 3N 4 is deposited in order to protect the AlN surface and thus prevent stress relaxation. AFM revealed that the root-mean-square (RMS) roughness in a 1×1 μm 2 area is 0.25 nm. When the AlN thickness reaches 8 nm, the sheet resistance can be as low as 186±3 Ω/□. Van der Pauw-Hall measurements show that the electron density is about 2.5×10 13/cm 2 with electron mobility exceeding 1140 cm 2/V s when extra 50 nm PECVD SiN is deposited.

Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron

NASA Astrophysics Data System (ADS)

Macchi, Carlos; Bürgi, Juan; García Molleja, Javier; Mariazzi, Sebastiano; Piccoli, Mattia; Bemporad, Edoardo; Feugeas, Jorge; Sennen Brusa, Roberto; Somoza, Alberto

2014-08-01

It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morphologies, the quality of the film-substrate interfaces and the open volume defects. A study of the depth profiling and morphological characterization of AlN thin films deposited on two types of Si substrates is presented. Thin films of thicknesses between 200 and 400 nm were deposited during two deposition times using a reactive sputter magnetron. These films were characterized by means of X-ray diffraction and imaging techniques (SEM and TEM). To analyze the composition of the films, energy dispersive X-ray spectroscopy was applied. Positron annihilation spectroscopy, specifically Doppler broadening spectroscopy, was used to gather information on the depth profiling of open volume defects inside the films and the AlN films-Si substrate interfaces. The results are interpreted in terms of the structural changes induced in the films as a consequence of changes in the deposition time (i.e., thicknesses) and of the orientation of the substrates.

Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr

2014-09-01

The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10{sup −5} Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10{sup −3} Ω{sup −1}, comparable to those of the ITO/Ag/ITOmore » multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.« less

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

NASA Astrophysics Data System (ADS)

Kecik, D.; Onen, A.; Konuk, M.; Gürbüz, E.; Ersan, F.; Cahangirov, S.; Aktürk, E.; Durgun, E.; Ciraci, S.

2018-03-01

Potential applications of bulk GaN and AlN crystals have made possible single and multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005, the theoretical studies have predicted that GaN and AlN can form two-dimensional (2D) stable, single-layer (SL) structures being wide band gap semiconductors and showing electronic and optical properties different from those of their bulk parents. Research on these 2D structures have gained importance with recent experimental studies achieving the growth of ultrathin 2D GaN and AlN on substrates. It is expected that these two materials will open an active field of research like graphene, silicene, and transition metal dichalcogenides. This topical review aims at the evaluation of previous experimental and theoretical works until 2018 in order to provide input for further research attempts in this field. To this end, starting from three-dimensional (3D) GaN and AlN crystals, we review 2D SL and multilayer (ML) structures, which were predicted to be stable in free-standing states. These are planar hexagonal (or honeycomb), tetragonal, and square-octagon structures. First, we discuss earlier results on dynamical and thermal stability of these SL structures, as well as the predicted mechanical properties. Next, their electronic and optical properties with and without the effect of strain are reviewed and compared with those of the 3D parent crystals. The formation of multilayers, hence prediction of new periodic layered structures and also tuning their physical properties with the number of layers are other critical subjects that have been actively studied and discussed here. In particular, an extensive analysis pertaining to the nature of perpendicular interlayer bonds causing planar GaN and AlN to buckle is presented. In view of the fact that SL GaN and AlN can be fabricated only on a substrate, the question of how the properties of free-standing, SL structures are affected if they are grown on a substrate is addressed. We also examine recent works treating the composite structures of GaN and AlN joined commensurately along their zigzag and armchair edges and forming heterostructures, δ-doping, single, and multiple quantum wells, as well as core/shell structures. Finally, outlooks and possible new research directions are briefly discussed.

Inhibited osteoclastic bone resorption through alendronate treatment in rats reduces severe osteoarthritis progression.

PubMed

Siebelt, M; Waarsing, J H; Groen, H C; Müller, C; Koelewijn, S J; de Blois, E; Verhaar, J A N; de Jong, M; Weinans, H

2014-09-01

Osteoarthritis (OA) is a non-rheumatoid joint disease characterized by progressive degeneration of extra-cellular cartilage matrix (ECM), enhanced subchondral bone remodeling, osteophyte formation and synovial thickening. Alendronate (ALN) is a potent inhibitor of osteoclastic bone resorption and results in reduced bone remodeling. This study investigated the effects of pre-emptive use of ALN on OA related osteoclastic subchondral bone resorption in an in vivo rat model for severe OA. Using multi-modality imaging we measured effects of ALN treatment within cartilage and synovium. Severe osteoarthritis was induced in left rat knees using papain injections in combination with a moderate running protocol. Twenty rats were treated with subcutaneous ALN injections and compared to twenty untreated controls. Animals were longitudinally monitored for 12weeks with in vivo μCT to measure subchondral bone changes and SPECT/CT to determine synovial macrophage activation using a folate-based radiotracer. Articular cartilage was analyzed at 6 and 12weeks with ex vivo contrast enhanced μCT and histology to measure sulfated-glycosaminoglycan (sGAG) content and cartilage thickness. ALN treatment successfully inhibited subchondral bone remodeling. As a result we found less subchondral plate porosity and reduced osteophytosis. ALN treatment did not reduce subchondral sclerosis. However, after the OA induction phase, ALN treatment protected cartilage ECM from degradation and reduced synovial macrophage activation. Surprisingly, ALN treatment also improved sGAG content of tibia cartilage in healthy joints. Our data was consistent with the hypothesis that osteoclastic bone resorption might play an important role in OA and may be a driving force for progression of the disease. However, our study suggest that this effect might not solely be effects on osteoclastic activity, since ALN treatment also influenced macrophage functioning. Additionally, ALN treatment and physical activity exercised a positive effect in healthy control joints, which increased cartilage sGAG content. More research on this topic might lead to novel insights as to improve cartilage quality. Copyright © 2014 Elsevier Inc. All rights reserved.

Effects of the bisphosphonate alendronate on molars of young rats after lateral luxation.

PubMed

Rothbarth, Cláudia Pires; Bradaschia-Correa, Vivian; Ferreira, Lorraine Braga; Arana-Chavez, Victor Elias

2014-12-01

The bisphosphonate alendronate (ALN) was employed with the aim of investigating its effects on dental and periodontal tissues after lateral luxation of developing molars. Twenty-one-day-old Wistar rats had their second upper molars laterally luxated. Daily 2.5 mg kg(-1) ALN injections started at the day of the luxation; controls received sterile saline solution. The teeth were analyzed 7, 14, and 21 days after the procedure. On the days cited, the maxillae were fixed, decalcified, and embedded in paraffin or Spurr resin. The paraffin sections were stained with H&E, incubated for TRAP histochemistry or immunolabeled for osteopontin (OPN). Spurr ultrathin sections were examined in a transmission electron microscope. After 21 days, the root apex of luxated molars without ALN was wide open and disorganized and also covered by an irregular layer of cellular cementum, which was not observed in ALN-treated animals. Ankylosis sites were observed in ALN rats in both luxated and non-luxated teeth. The TRAP-positive osteoclasts were more numerous in ALN group, despite their latent ultrastructural appearance without the presence of resorption apparatus compared to controls. OPN immunolabeling revealed a thick immunopositive line in the dentin that must be resultant from the moment of the luxation, while ALN-treated specimens did not present alterations in dentin. The present findings indicate that alendronate inhibits some alterations in dentin and cementum formation induced by dental trauma. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Antiferromagnetic Interlayer Exchange Coupling in All-Semiconducting EuS/PbS/EuS Trilayers

NASA Technical Reports Server (NTRS)

Smits, C. J. P.; Filip, A. T.; Swagten, H. J. M.; Koopmans, B.; deJonge, W. J. M.; Chernyshova, M.; Kowalczyk, L.; Grasza, K.; Szczerbakow, A.; Story, T.

2003-01-01

A comprehensive experimental study on the antiferromagnetic interlayer exchange coupling in high quality epitaxial all-semiconducting EuSPbSEuS trilayers is reported. The influence of substrates, the thickness of the non-magnetic PbS spacer layer, and of temperature, was investigated by means of SQUID magnetometry. In trilayers with a PbS thickness between 4 and 12 deg A the low temperature hysteresis loops showed the signature of antiferromagnetic coupling. The value of the interlayer exchange coupling energy was determined by simulating the data with a modified Stoner model, including Zeeman, anisotropy, and exchange coupling energies. An important observation was of a strong dependence of the interlayer exchange coupling energy on temperature, consistent with a power law dependence of the exchange coupling constant on the saturation magnetization of the EuS layers. While no theoretical description is readily available, we conjecture that the observed behavior is due to a dependence of the interlayer exchange coupling energy on the exchange splitting of the EuS conduction band.

Spotting 2D atomic layers on aluminum nitride thin films.

PubMed

Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

2015-10-23

Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

Gettering of Residual Impurities by Ion Implantation Damage in Poly-AlN UV Diode Detectors

NASA Astrophysics Data System (ADS)

Khan, A. H.; Stacy, T.; Meese, J. M.

1996-03-01

UV diode detectors have been fabricated from oriented polycrystalline AlN grown on (111) n-type 3-15Ω-cm Si substrates by CVD using AlCl3 and ammonia with a hydrogen carrier gas at 760-800C, 40-45 torr and gas flow rates of 350, 120, and 120 sccm for hydrogen, ammonia and hydrogen over heated AlCl_3. Half of the AlN film of thickness 1.5-2.0 microns was masked off prior to ion implantation. Samples were ion-implanted at 5 kV with methane, nitrogen and argon to a dose of 5-6 x 10^18 ions/cm^2. The AlN was contacted with sputtered Au while the Si was contacted with evaporated Al. No annealing was performed. Rectification was obtained as a result of radiation damage in the AlN. SIMs analysis showed a reduction of oxygen, hydrogen, chlorine and carbon by several orders of magnitude and to a depth of several microns in the ion implanted samples compared to the masked samples. The quantum efficiency was 16nm uncorrected for reflection from the AlN and thin metal contact.

New Development in Selective Laser Melting of Ti-6Al-4V: A Wider Processing Window for the Achievement of Fully Lamellar α + β Microstructures

NASA Astrophysics Data System (ADS)

Lui, E. W.; Xu, W.; Pateras, A.; Qian, M.; Brandt, M.

2017-12-01

Recent progress has shown that Ti-6Al-4V fabricated by selective laser melting (SLM) can achieve a fully lamellar α + β microstructure using 60 µm layer thickness in the as-built state via in situ martensite decomposition by manipulating the processing parameters. The potential to broaden the processing window was explored in this study by increasing the layer thickness to the less commonly used 90 µm. Fully lamellar α + β microstructures were produced in the as-built state using inter-layer times in the range of 1-12 s. Microstructural features such as the α-lath thickness and morphology were sensitive to both build height and inter-layer time. The α-laths produced using the inter-layer time of 1 s were much coarser than those produced with the inter-layer time of 12 s. The fine fully lamellar α + β structure resulted in tensile ductility of 11% and yield strength of 980 MPa. The tensile properties can be further improved by minimizing the presence of process-induced defects.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

PubMed

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

PubMed Central

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-01

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin

2013-06-01

We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.

Establishment of design space for high current gain in III-N hot electron transistors

NASA Astrophysics Data System (ADS)

Gupta, Geetak; Ahmadi, Elaheh; Suntrup, Donald J., III; Mishra, Umesh K.

2018-01-01

This paper establishes the design space of III-N hot electron transistors (HETs) for high current gain by designing and fabricating HETs with scaled base thickness. The device structure consists of GaN-based emitter, base and collector regions where emitter and collector barriers are implemented using AlN and InGaN layers, respectively, as polarization-dipoles. Electrons tunnel through the AlN layer to be injected into the base at a high energy where they travel in a quasi-ballistic manner before being collected. Current gain increases from 1 to 3.5 when base thickness is reduced from 7 to 4 nm. The extracted mean free path (λ mfp) is 5.8 nm at estimated injection energy of 1.5 eV.

Effect of Pd Interlayer on Electrochemical Properties of ENIG Surface Finish in 3.5 wt.% NaCl Solution

NASA Astrophysics Data System (ADS)

Nam, N. D.; Bui, Q. V.; Nhan, H. T.; Phuong, D. V.; Bian, M. Z.

2014-09-01

The corrosion resistance of a multilayered (NiP-Pd-Au) coating with various thicknesses of palladium (Pd) interlayer deposited on copper by an electroless method was investigated using electrochemical techniques including potentiodynamic polarization and electrochemical impedance spectroscopy. In addition, the surface finish was examined by x-ray diffraction analysis and scanning electron microscopy, and the contact angle of the liquid-solid interface was recorded. The corrosion resistance of the copper substrate was considerably improved by Pd interlayer addition. Increase of the thickness of the Pd interlayer enhanced the performance of the Cu-NiP-Pd-Au coating due to low porosity, high protective efficiency, high charge-transfer resistance, and contact angle. These are attributed to the diffusion of layers in the Cu-NiP-Pd-Au coating acting as a physical barrier layer, leading to the protection provided by the coating.

FEM Analysis of Sezawa Mode SAW Sensor for VOC Based on CMOS Compatible AlN/SiO₂/Si Multilayer Structure.

PubMed

Aslam, Muhammad Zubair; Jeoti, Varun; Karuppanan, Saravanan; Malik, Aamir Farooq; Iqbal, Asif

2018-05-24

A Finite Element Method (FEM) simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO₂/Si Surface Acoustic Wave (SAW) sensor to low concentrations of Volatile Organic Compounds (VOCs), that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS) compatible AlN/SiO₂/Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO₂ layers’ thicknesses over phase velocities and electromechanical coupling coefficients ( k ²) of two SAW modes (i.e., Rayleigh and Sezawa) is analyzed and the optimal thicknesses of AlN and SiO₂ layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB) polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode.

Triplet energy transfer and triplet exciton recycling in singlet fission sensitized organic heterojunctions

NASA Astrophysics Data System (ADS)

Hamid, Tasnuva; Yambem, Soniya D.; Crawford, Ross; Roberts, Jonathan; Pandey, Ajay K.

2017-08-01

Singlet exciton fission is a process where an excited singlet state splits into two triplets, thus leading to generation of multiple excitons per absorbed photon in organic semiconductors. Herein, we report a detailed exciton management approach for multiexciton harvesting over a broadband region of the solar spectrum in singlet fission sensitized organic photodiodes. Through systematic studies on the model cascade of pentacene/rubrene/C60, we found that efficient photocurrent generation from pentacene can still occur despite the presence of a >10nm thick interlayer of rubrene in between the pentacene/C60 heterojunction. Our results show that thin rubrene interlayers of thickness < 5 nm are effective in maintaining the delicate balance between two free charge generation channels that progress independently via the electron and hole transfer routes. The contribution to photocurrent from pentacene despite having a reasonably thick rubrene interlayer, that too with higher triplet energy (T1=1.12 eV) than pentacene (T1= 0.86 eV), makes its operation a rather interesting result. We discuss the role of rubrene interlayer film discontinuity, triplet exciton reflection from rubrene interlayer and triplet energy transfer from rubrene to pentacene layer followed by diffusion of triplet excitons through rubrene as plausible mechanisms that would enable triplet excitons from pentacene to generate significant photocurrent in a multilayer organic heterojunction.

Fe-Al interface intermixing and the role of Ti, V, and Zr as a stabilizing interlayer at the interface

NASA Astrophysics Data System (ADS)

Priyantha, W.; Smith, R. J.; Chen, H.; Kopczyk, M.; Lerch, M.; Key, C.; Nachimuthu, P.; Jiang, W.

2009-03-01

Fe-Al bilayer interfaces with and without interface stabilizing layers (Ti, V, Zr) were fabricated using dc magnetron sputtering. Intermixing layer thickness and the effectiveness of the stabilizing layer (Ti, V, Zr) at the interface were studied using Rutherford backscattering spectrometry (RBS) and x-ray reflectometry (XRR). The result for the intermixing thickness of the AlFe layer is always higher when Fe is deposited on Al as compared to when Al is deposited on Fe. By comparing measurements with computer simulations, the thicknesses of the AlFe layers were determined to be 20.6 Å and 41.1 Å for Al/Fe and Fe/Al bilayer systems, respectively. The introduction of Ti and V stabilizing layers at the Fe-Al interface reduced the amount of intermixing between Al and Fe, consistent with the predictions of model calculations. The Zr interlayer, however, was ineffective in stabilizing the Fe-Al interface in spite of the chemical similarities between Ti and Zr. In addition, analysis suggests that the Ti interlayer is not effective in stabilizing the Fe-Al interface when the Ti interlayer is extremely thin (˜3 Å) for these sputtered metallic films.

Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substrates

NASA Astrophysics Data System (ADS)

Fandan, R.; Pedrós, J.; Schiefele, J.; Boscá, A.; Martínez, J.; Calle, F.

2018-05-01

Surface plasmon polaritons in graphene couple strongly to surface phonons in polar substrates leading to hybridized surface plasmon-phonon polaritons (SPPPs). We demonstrate that a surface acoustic wave (SAW) can be used to launch propagating SPPPs in graphene/h-BN heterostructures on a piezoelectric substrate like AlN, where the SAW-induced surface modulation acts as a dynamic diffraction grating. The efficiency of the light coupling is greatly enhanced by the introduction of the h-BN film as compared to the bare graphene/AlN system. The h-BN interlayer not only significantly changes the dispersion of the SPPPs but also enhances their lifetime. The strengthening of the SPPPs is shown to be related to both the higher carrier mobility induced in graphene and the coupling with h-BN and AlN surface phonons. In addition to surface phonons, hyperbolic phonons polaritons (HPPs) appear in the case of multilayer h-BN films leading to hybridized hyperbolic plasmon-phonon polaritons (HPPPs) that are also mediated by the SAW. These results pave the way for engineering SAW-based graphene/h-BN plasmonic devices and metamaterials covering the mid-IR to THz range.

Comparison of alloy disorder scatterings in Ga- and N-polar AlGaN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Kang, He; Li, Hui-Jie; Yang, Shao-Yan; Zhang, Wei; Zhu, Ming; Liu, Li; Li, Nan

2018-01-01

The two-dimensional electron gas (2DEG) mobilities limited by alloy disorder (AD) scattering in both Ga- and N-polar AlGaN/GaN heterostructures are investigated. It was found that the AD scattering limited electron mobility in N-polar heterostructures is on the order of 103-104 cm2/Vs, which is comparable to the optical phonon scattering at room-temperature. In comparison, the AD scattering in Ga-polar samples is much less important. Moreover, the electron mobility decreases with the 2DEG density in the Ga-polar device but shows a reverse trend in the N-polar counterpart. This is found to be caused by the rather different electric field distributions in Ga- and N-polar AlGaN/GaN heterostructures. In addition, we find that an AlN interlayer can effectively reduce the alloy scattering, mainly due to the large band offset between AlN and GaN. The calculated mobilities have been compared with the experiment results and good agreements are found. We believe that our results are important for the design of AlGaN/GaN heterostructure-based devices, especially the N-polar ones.

Hydride vapor phase epitaxy of high structural perfection thick AlN layers on off-axis 6H-SiC

NASA Astrophysics Data System (ADS)

Volkova, Anna; Ivantsov, Vladimir; Leung, Larry

2011-01-01

The employment of more than 10 μm thick AlN epilayers on SiC substrates for AlGaN/GaN high-electron-mobility transistors (HEMTs) substantially raises their performance in high-power energy-efficient amplifiers for 4G wireless mobile stations. In this paper, structural properties and surface morphology of thick AlN epilayers deposited by hydride vapor phase epitaxy (HVPE) on off-axis conductive 6H-SiC substrates are reported. The epilayers were examined in detail by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), Nomarski differential interference contrast (DIC), scanning electron microscopy (SEM), and selective wet chemical etching. At optimal substrate preparation and growth conditions, a full width at half-maximum (FWHM) of the XRD rocking curve (RC) for the symmetric (00.2) reflex was very close to that of the substrate (less than 40 arcsec) suggesting low screw dislocation density in the epilayer (˜10 6 cm -2) and small in-plane tilt misorientation. Reciprocal space mapping around asymmetric reflexes and measured lattice parameters indicated a fully relaxed state of the epilayers. The unit-cell-high stepped areas of the epilayers with 0.5 nm root mean square (RMS) roughness over 1×1 μm 2 scan were alternated with step-bunching instabilities up to 350 nm in height. Low warp of the substrates makes them suitable for precise epitaxy of HEMT structures.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko

2016-01-15

Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All othermore » ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.« less

Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al{sub 2}O{sub 3} interlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xing; Liu, Hongxia, E-mail: hxliu@mail.xidian.edu.cn; Fei, Chenxi

2016-06-15

A thin Al{sub 2}O{sub 3} interlayer deposited between La{sub 2}O{sub 3} layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al{sub 2}O{sub 3} interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.

Comparative study on the deposition of silicon oxide permeation barrier coatings for polymers using hexamethyldisilazane (HMDSN) and hexamethyldisiloxane (HMDSO)

NASA Astrophysics Data System (ADS)

Mitschker, F.; Schücke, L.; Hoppe, Ch; Jaritz, M.; Dahlmann, R.; de los Arcos, T.; Hopmann, Ch; Grundmeier, G.; Awakowicz, P.

2018-06-01

The effect of the selection of hexamethyldisiloxane (HMDSO) and hexamethyldisilazane (HMDSN) as a precursor in a microwave driven low pressure plasma on the deposition of silicon oxide barrier coatings and silicon based organic interlayers on polyethylene terephthalate (PET) and polypropylene (PP) substrates is investigated. Mass spectrometry is used to quantify the absolute gas density and the degree of depletion of neutral precursor molecules under variation of oxygen admixture. On average, HMDSN shows a smaller density, a higher depletion and the production of smaller fragments. Subsequently, this is correlated with barrier performance and chemical structure as a function of barrier layer thickness and oxygen admixture on PET. For this purpose, the oxygen transmission rate (OTR) is measured and Fourier transformed infrared (FTIR) spectroscopy as well as x-ray photoelectron spectroscopy (XPS) is performed. HMDSN based coatings exhibit significantly higher barrier performances for high admixtures of oxygen (200 sccm). In comparison to HMDSO based processes, however, a higher supply of oxygen is necessary to achieve a sufficient degree of oxidation, cross-linking and, therefore, barrier performance. FTIR and XPS reveal a distinct carbon content for low oxygen admixtures (10 and 20 sccm) in case of HMDSN based coatings. The variation of interlayer thickness also reveals significantly higher OTR for HMDSO based coatings on PET and PP. Barrier performance of HMDSO based coatings improves with increasing interlayer thickness up to 10 nm for PET and PP. HMDSN based coatings exhibit a minimum of OTR without interlayer on PP and for 2 nm interlayer thickness on PET. Furthermore, HMDSN based coatings show distinctly higher bond strengths to the PP substrate.

Effects of the F₄TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors.

PubMed

Fan, Ching-Lin; Lin, Wei-Chun; Chang, Hsiang-Sheng; Lin, Yu-Zuo; Huang, Bohr-Ran

2016-01-13

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F₄TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F₄TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F₄TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F₄TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.

Bending stiffness and interlayer shear modulus of few-layer graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiaoming; Yi, Chenglin; Ke, Changhong, E-mail: cke@binghamton.edu

2015-03-09

Interlayer shear deformation occurs in the bending of multilayer graphene with unconstrained ends, thus influencing its bending rigidity. Here, we investigate the bending stiffness and interlayer shear modulus of few-layer graphene through examining its self-folding conformation on a flat substrate using atomic force microscopy in conjunction with nonlinear mechanics modeling. The results reveal that the bending stiffness of 2–6 layers graphene follows a square-power relationship with its thickness. The interlayer shear modulus is found to be in the range of 0.36–0.49 GPa. The research findings show that the weak interlayer shear interaction has a substantial stiffening effect for multilayer graphene.

Electron microscopy of AlN-SiC interfaces and solid solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bentley, J.; Tanaka, S.; Davis, R.F.

In a 2H AlN-SiC solid solution grown by MBE on {alpha}(6H)-SiC (3{degrees} from [0001]), the epilayer contained a high density of basal faults related to {approximately}5 nm steps on the growth surface: no compositional inhomogeneity was detected by PEELS. In diffusion couples of polycrystalline, sintered AlN on SiC annealed at 1600 and 1700{degrees}C. 8H sialon [nominally (AlN){sub 2}Al{sub 2}O{sub 3}] formed at the interface of SiC and recrystallized epitactic AlN grains, and Si{sub 3}N{sub 4}-rich {beta}{prime} sialon particles formed in the SiC. No interdiffusion was detected by PEELS in diffusion couples of MBE-grown AlN on SiC annealed at 1700 andmore » 1850{degrees}C. Irregular epilayer thickness explains companion Auger depth profile results.« less

High-Temperature Dielectric Properties of Aluminum Nitride Ceramic for Wireless Passive Sensing Applications

PubMed Central

Liu, Jun; Yuan, Yukun; Ren, Zhong; Tan, Qiulin; Xiong, Jijun

2015-01-01

The accurate characterization of the temperature-dependent permittivity of aluminum nitride (AlN) ceramic is quite critical to the application of wireless passive sensors for harsh environments. Since the change of the temperature-dependent permittivity will vary the ceramic-based capacitance, which can be converted into the change of the resonant frequency, an LC resonator, based on AlN ceramic, is prepared by the thick film technology. The dielectric properties of AlN ceramic are measured by the wireless coupling method, and discussed within the temperature range of 12 °C (room temperature) to 600 °C. The results show that the extracted relative permittivity of ceramic at room temperature is 2.3% higher than the nominal value of 9, and increases from 9.21 to 10.79, and the quality factor Q is decreased from 29.77 at room temperature to 3.61 at 600 °C within the temperature range. PMID:26370999

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

NASA Astrophysics Data System (ADS)

Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

2018-03-01

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

AlN-based piezoelectric micromachined ultrasonic transducer for photoacoustic imaging

NASA Astrophysics Data System (ADS)

Chen, Bingzhang; Chu, Futong; Liu, Xingzhao; Li, Yanrong; Rong, Jian; Jiang, Huabei

2013-07-01

We report on the fabrication of a piezoelectric micromachined ultrasonic transducer (pMUT) and its application to photoacoustic imaging. With c-axis orientation, AlN was grown on a 300 nm-thick SiO2 film and a 200 nm-thick bottom electrode at room temperature. The device consists of SiO2, bottom electrode, AlN films, upper electrode, and polyimide protective layer. An area ratio of 0.45 was used between the upper electrode and the vibration area of the pMUT to provide an optimal sensitivity of transducer. Its resonant frequency was measured to be 2.885 MHz, and the coupling coefficient in the range of 2.38%-3.71%. The fabricated pMUT was integrated with a photoacoustic imaging system and photoacoustic image of a phantom was obtained. The resolution of the system was measured to be about 240 μm.

Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

PubMed Central

Fan, Ching-Lin; Lin, Wei-Chun; Chang, Hsiang-Sheng; Lin, Yu-Zuo; Huang, Bohr-Ran

2016-01-01

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window. PMID:28787845

Analyzing the application of silicon-silver-2D nanomaterial-Al2O3 heterojunction in plasmonic sensor and its performance evaluation

NASA Astrophysics Data System (ADS)

Sharma, Anuj K.

2018-03-01

A semiconductor-metal-dielectric heterojunction system, generally useful in enhancing the efficiency of solar cells, is explored to design a high performance optical sensor based on surface plasmon resonance in near infrared (NIR). Silicon is considered as light coupling material and different 2D nanomaterials such as graphene, MoS2, and MoSe2 are explored to enhance the sensor's performance in terms of its figure of merit (FOM). An Al2O3 interlayer with a few nanometers of thickness is introduced, which acts as a critical component to significantly enhance the sensor's FOM. It is observed that an Al2O3 interlayer of around 9 nm thickness is able to many-fold upturn the sensor's FOM. As another important finding, silver layer thickness of around 60 nm is found to be highly useful to achieve high values of FOM. It is established through results that operating at longer NIR wavelength leads to greater FOM for any choice of 2D nanomaterial and any thickness of Al2O3 interlayer. Proposed sensor provides significantly greater FOM than previous works on SPR sensors.

Influence of Zn Interlayer on Interfacial Microstructure and Mechanical Properties of TIG Lap-Welded Mg/Al Joints

NASA Astrophysics Data System (ADS)

Gao, Qiong; Wang, Kehong

2016-03-01

This study explored 6061 Al alloy and AZ31B Mg alloy joined by TIG lap welding with Zn foils of varying thicknesses, with the additional Zn element being imported into the fusion zone to alloy the weld seam. The microstructures and chemical composition in the fusion zone near the Mg substrate were examined by SEM and EDS, and tensile shear strength tests were conducted to investigate the mechanical properties of the Al/Mg joints, as well as the fracture surfaces, and phase compositions. The results revealed that the introduction of an appropriate amount of Zn transition layer improves the microstructure of Mg/Al joints and effectively reduces the formation of Mg-Al intermetallic compounds (IMCs). The most common IMCs in the fusion zone near the Mg substrate were Mg-Zn and Mg-Al-Zn IMCs. The type and distribution of IMCs generated in the weld zone differed according to Zn additions; Zn interlayer thickness of 0.4 mm improved the sample's mechanical properties considerably compared to thicknesses of less than 0.4 mm; however, any further increase in Zn interlayer thickness of above 0.4 mm caused mechanical properties to deteriorate.

Evaluation of laminated aluminum plate for shuttle applications

NASA Technical Reports Server (NTRS)

Martin, M. J.

1973-01-01

Flaw growth behavior in roll diffusion bonded and adhesive bonded 2219-T87 aluminum alloy was compared to that in monolothic 2219-T87. Based on tests at 40 KSI cyclic stress, for equivalent cyclic life, a .004 interlayer laminate can tolerate a surface flaw twice as wide as in monolithic material, or provide an 8% weight saving by operating at higher stress for the same initial flaw. Roll diffusion bonded material with three structural plies of 2219-T87 and two interlayers of 1100 aluminum was prepared with interlayer thicknesses of .004, .007 and .010 in. Total laminate thickness was .130 in. The .004 interlayer laminate was most effective and gave better results than monolithic material at 40 and 48 ksi. Adhesive bonded specimens were fabricated of three sheets of 2219-T87 aluminum alloy bonded with METLBOND 329 adhesive. Adhesive bonded specimens gave longer lives to failure than diffusion bonded specimens at 40 ksi the diffusion bonded material was superior. Flaws initiated in one ply of the laminate grew to the edges of the specimen in that ply but did not propagate into adjacent plies.

Spin-wave resonance frequency in ferromagnetic thin film with interlayer exchange coupling and surface anisotropy

NASA Astrophysics Data System (ADS)

Zhang, Shuhui; Rong, Jianhong; Wang, Huan; Wang, Dong; Zhang, Lei

2018-01-01

We have investigated the dependence of spin-wave resonance(SWR) frequency on the surface anisotropy, the interlayer exchange coupling, the ferromagnetic layer thickness, the mode number and the external magnetic field in a ferromagnetic superlattice film by means of the linear spin-wave approximation and Green's function technique. The SWR frequency of the ferromagnetic thin film is shifted to higher values corresponding to those of above factors, respectively. It is found that the linear behavior of SWR frequency curves of all modes in the system is observed as the external magnetic field is increasing, however, SWR frequency curves are nonlinear with the lower and the higher modes for different surface anisotropy and interlayer exchange coupling in the system. In addition, the SWR frequency of the lowest (highest) mode is shifted to higher (lower) values when the film thickness is thinner. The interlayer exchange coupling is more important for the energetically higher modes than for the energetically lower modes. The surface anisotropy has a little effect on the SWR frequency of the highest mode, when the surface anisotropy field is further increased.

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Koshelev, O. A.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Ivanov, S. V.; Jmerik, V. N.

2017-11-01

The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and edge(total)threading dislocation (TD) densities down to 1.7·108 and 2·109 cm-2, respectively, in a 2.8-μm-thick GaN buffer layer grown atop of AlN/6H-SiC. The screw and total TD densities of 1.2·109 and 7.4·109 cm-2, respectively, were achieved in a 1-μm-thickGaN/AlNheterostructure on Si(111). Stress generation and relaxation in GaN/AlN heterostructures were investigated by using multi-beam optical stress sensor (MOSS) to achieve zero substrate curvature at room temperature. It is demonstrated that a 1-μm-thick GaN/AlN buffer layer grown by PA MBE provides planar substrate morphology in the case of growth on Si substrates whereas 5-μm-thick GaN buffer layers have to be used to achieve the same when growing on 6H-SiC substrates.

Study of interlayer coupling between FePt and FeCoB thin films through MgO spacer layer

NASA Astrophysics Data System (ADS)

Singh, Sadhana; Kumar, Dileep; Gupta, Mukul; Reddy, V. Raghvendra

2017-05-01

Interlayer exchange coupling between hard-FePt and soft-FeCoB magnetic layers has been studied with increasing thickness of insulator MgO spacer layer in FePt/MgO/FeCoB sandwiched structure. A series of the samples were prepared in identical condition using ion beam sputtering method and characterized for their magnetic and structural properties using magneto-optical Kerr effect (MOKE) and X-ray reflectivity measurements. The nature of coupling between FePt and FeCoB was found to be ferromagnetic which decreases exponentially with increasing thickness of MgO layer. At very low thickness of MgO layer, both layers were found strongly coupled thus exhibiting coherent magnetization reversal. At higher thickness, both layers were found decoupled and magnetization reversal occurred at different switching fields. Strong coupling at very low thickness is attributed to pin holes in MgO layer which lead to direct coupling whereas on increasing thickness, coupling may arise due to magneto-static interactions.

Multilayer Disk Reduced Interlayer Crosstalk with Wide Disk-Fabrication Margin

NASA Astrophysics Data System (ADS)

Hirotsune, Akemi; Miyauchi, Yasushi; Endo, Nobumasa; Onuma, Tsuyoshi; Anzai, Yumiko; Kurokawa, Takahiro; Ushiyama, Junko; Shintani, Toshimichi; Sugiyama, Toshinori; Miyamoto, Harukazu

2008-07-01

To reduce interlayer crosstalk caused by the ghost spot which appears in a multilayer optical disk with more than three information layers, a multilayer disk structure which reduces interlayer crosstalk with a wide disk-fabrication margin was proposed in which the backward reflectivity of the information layers is sufficiently low. It was confirmed that the interlayer crosstalk caused by the ghost spot was reduced to less than the crosstalk from the adjacent layer by controlling backward reflectivity. The wide disk-fabrication margin of the proposed disk structure was indicated by experimentally confirming that the tolerance of the maximum deviation of the spacer-layer thickness is four times larger than that in the previous multilayer disk.

Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

NASA Astrophysics Data System (ADS)

Takeuchi, M.; Shimizu, H.; Kajitani, R.; Kawasaki, K.; Kumagai, Y.; Koukitu, A.; Aoyagi, Y.

2007-01-01

The growth of N-polar AlN layers on c-plane sapphire is reported. Low-temperature AlN (LT-AlN) layers were used as seeding buffer layers with pre-nitridation for sapphire. To avoid strong vapor-phase reaction between trimethylaluminum (TMA) and ammonia (NH 3) and to improve the crystalline quality, low-pressure flow-modulated (FM) metal-organic chemical vapor deposition (MOCVD) technique was introduced with careful optimization of the FM sequence. The surface morphologies and the crystalline quality defined by the X-ray diffraction (XRD) (0 0 2) and (1 0 0) rocking curve measurements strongly depended on the LT-AlN thickness and on the TMA coverage per cycle of the FM growth. The sample showing the best XRD data with a good morphology was almost completely etched in aqueous KOH solution owing to N-polarity. From the plan-view transmission electron microscopy (TEM) observation, the dislocation density was counted to be about 3×10 10 cm -2.

Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

NASA Astrophysics Data System (ADS)

Stoker, D. S.; Baek, J.; Wang, W.; Kovar, D.; Becker, M. F.; Keto, J. W.

2006-05-01

We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG ( z -scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN -sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χxxxx(3)(3ω;ω,ω,ω)=1.52±0.25×10-13esu . The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects.

Wide Bandgap Transparent Conducting Electrode of FTO/Ag/FTO Structure for Ultraviolet Light-Emitting Diodes.

PubMed

Yohn, Gyu-Jae; Jeong, Soae; Kang, Soo-Hyun; Kim, Si-Won; Noh, Beom-Rae; Oh, Semi; Jeong, Bong-Yong; Kim, Kyoung-Kook

2018-09-01

We investigated the effect of the Ag interlayer thickness on the structural, electrical and optical properties of FTO/Ag/FTO structures designed for use in wide bandgap transparent conducting electrodes. The top and bottom FTO layers were deposited on α-Al2O3 (0001) substrates via RF magnetron sputtering at 300 °C and Ag interlayers were deposited using an e-beam evaporator system. We optimized the figure of merit by changing the thickness of the inserted Ag interlayer from 10 nm to 14 nm, achieving a maximum value of 2.46 × 10-3 Ω-1 and a resistivity of 6.4 × 10-4 Ω · cm using an FTO (70 nm)/Ag (14 nm)/FTO (40 nm) structure. Furthermore, the average optical transmittance in the deep UV range (300 to 330 nm) was 82.8%.

EFFECTS OF TiOx INTERLAYER ON RESISTANCE SWITCHING OF Pt/TiOx/ZnO/n+-Si STRUCTURES

NASA Astrophysics Data System (ADS)

Li, Hongxia; Lv, Xiaojun; Xi, Junhua; Wu, Xin; Mao, Qinan; Liu, Qingmin; Ji, Zhenguo

2014-08-01

In this paper, we fabricated Pt/TiOx/ZnO/n+-Si structures by inserting TiOx interlayer between Pt top electrode (TE) and ZnO thin film for non-volatile resistive random access memory (ReRAM) applications. Effects of TiOx interlayer with different thickness on the resistance switching of Pt/TiOx/ZnO/n+-Si structures were investigated. Conduction behaviors in high and low resistance state (HRS and LRS) fit well with the trap-controlled space-charge-limited conduction (SCLC) and Ohmic behavior, respectively. Variations of set and reset voltages and HRS and LRS resistances of Pt/TiOx/ZnO/n+-Si structures were investigated as a function of TiOx thickness. Switching cycling tests were attempted to evaluate the endurance reliability of Pt/TiOx/ZnO/n+-Si structures. Additionally, the switching mechanism was analyzed by the filament model.

Spin-triplet electron transport in hybrid superconductor heterostructures with a composite ferromagnetic interlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheyerman, A. E., E-mail: karen@hitech.cplire.ru; Constantinian, K. Y.; Ovsyannikov, G. A.

2015-06-15

Hybrid YBa{sub 2}Cu{sub 3}O{sub 7−x}/SrRuO{sub 3}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/Au-Nb superconductor mesastructures with a composite manganite-ruthenate ferromagnetic interlayer are studied using electrophysical, magnetic, and microwave methods. The supercurrent in the mesastructure is observed when the interlayer thickness is much larger than the coherence length of ferromagnetic materials. The peak on the dependence of the critical current density on the interlayer material thickness corresponds to the coherence length, which is in qualitative agreement with theoretical predictions for a system with spit-triplet superconducting correlations. The magnetic-field dependence of the critical current is determined by penetration of magnetic flux quanta and by the magneticmore » domain structure, as well as by the field dependence of disorientation of the magnetization vectors of the layers in the composite magnetic interlayer. It is found that the supercurrent exists in magnetic fields two orders of magnitude stronger than the field corresponding to entry of a magnetic flux quantum into the mesastructure. The current-phase relation (CPR) of the supercurrent of mesastructures is investigated upon a change in the magnetic field from zero to 30 Oe; the ratio of the second CPR harmonic to the first, determined from the dependence of the Shapiro steps on the microwave radiation amplitude, does not exceed 50%.« less

Toward maximum transmittance into absorption layers in solar cells: investigation of lossy-film-induced mismatches between reflectance and transmittance extrema.

PubMed

Chang, Yin-Jung; Lai, Chi-Sheng

2013-09-01

The mismatch in film thickness and incident angle between reflectance and transmittance extrema due to the presence of lossy film(s) is investigated toward the maximum transmittance design in the active region of solar cells. Using a planar air/lossy film/silicon double-interface geometry illustrates important and quite opposite mismatch behaviors associated with TE and TM waves. In a typical thin-film CIGS solar cell, mismatches contributed by TM waves in general dominate. The angular mismatch is at least 10° in about 37%-53% of the spectrum, depending on the thickness combination of all lossy interlayers. The largest thickness mismatch of a specific interlayer generally increases with the thickness of the layer itself. Antireflection coating designs for solar cells should therefore be optimized in terms of the maximum transmittance into the active region, even if the corresponding reflectance is not at its minimum.

Carrier-selective interlayer materials for silicon solar cell contacts

NASA Astrophysics Data System (ADS)

Xue, Muyu; Islam, Raisul; Chen, Yusi; Chen, Junyan; Lu, Ching-Ying; Mitchell Pleus, A.; Tae, Christian; Xu, Ke; Liu, Yi; Kamins, Theodore I.; Saraswat, Krishna C.; Harris, James S.

2018-04-01

This work presents titanium oxide (TiOx) and nickel oxide (NiOx) as promising carrier-selective interlayer materials for metal-interlayer-semiconductor contacts for silicon solar cells. The electron-conducting, hole-blocking behavior of TiOx and the opposite carrier-selective behavior of NiOx are investigated using the transmission-line-method. The Fermi level depinning effect and the tunneling resistance are demonstrated to be dependent on the interlayer oxide thickness and annealing temperature. NiOx is furthermore experimentally demonstrated to be capable of improving the effective minority carrier lifetime by quasi-steady-state photoconductance method. Our study demonstrates that TiOx and NiOx can be effective carrier-selective materials for Si solar cells and provides a framework for characterizing carrier-selective contacts.

High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange

NASA Astrophysics Data System (ADS)

Murata, H.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.; Toko, K.

2017-12-01

The Ni-induced layer-exchange growth of amorphous carbon is a unique method used to fabricate uniform multilayer graphene (MLG) directly on an insulator. To improve the crystal quality of MLG, we prepare AlOx or SiO2 interlayers between amorphous C and Ni layers, which control the extent of diffusion of C atoms into the Ni layer. The growth morphology and Raman spectra observed from MLG formed by layer exchange strongly depend on the material type and thickness of the interlayers; a 1-nm-thick AlOx interlayer is found to be ideal for use in experiments. Transmission electron microscopy and electron energy-loss spectra reveal that the crystal quality of the resulting MLG is much higher than that of a sample without an interlayer. The grain size reaches a few μm, leading to an electrical conductivity of 1290 S/cm. The grain size and the electrical conductivity are the highest among MLG synthesized using a solid-phase reaction including metal-induced crystallization. The direct synthesis of uniform, high-quality MLG on arbitrary substrates will pave the way for advanced electronic devices integrated with carbon materials.

Chemical and Morphological Control of Interfacial Self-Doping for Efficient Organic Electronics.

PubMed

Liu, Yao; Cole, Marcus D; Jiang, Yufeng; Kim, Paul Y; Nordlund, Dennis; Emrick, Todd; Russell, Thomas P

2018-04-01

Solution-based processing of materials for electrical doping of organic semiconductor interfaces is attractive for boosting the efficiency of organic electronic devices with multilayer structures. To simplify this process, self-doping perylene diimide (PDI)-based ionene polymers are synthesized, in which the semiconductor PDI components are embedded together with electrolyte dopants in the polymer backbone. Functionality contained within the PDI monomers suppresses their aggregation, affording self-doping interlayers with controllable thickness when processed from solution into organic photovoltaic devices (OPVs). Optimal results for interfacial self-doping lead to increased power conversion efficiencies (PCEs) of the fullerene-based OPVs, from 2.62% to 10.64%, and of the nonfullerene-based OPVs, from 3.34% to 10.59%. These PDI-ionene interlayers enable chemical and morphological control of interfacial doping and conductivity, demonstrating that the conductive channels are crucial for charge transport in doped organic semiconductor films. Using these novel interlayers with efficient doping and high conductivity, both fullerene- and nonfullerene-based OPVs are achieved with PCEs exceeding 9% over interlayer thicknesses ranging from ≈3 to 40 nm. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haider, Ali; Kayaci, Fatma; Uyar, Tamer

2014-09-01

Aluminum nitride (AlN)/boron nitride (BN) bishell hollow nanofibers (HNFs) have been fabricated by successive atomic layer deposition (ALD) of AlN and sequential chemical vapor deposition (CVD) of BN on electrospun polymeric nanofibrous template. A four-step fabrication process was utilized: (i) fabrication of polymeric (nylon 6,6) nanofibers via electrospinning, (ii) hollow cathode plasma-assisted ALD of AlN at 100 °C onto electrospun polymeric nanofibers, (iii) calcination at 500 °C for 2 h in order to remove the polymeric template, and (iv) sequential CVD growth of BN at 450 °C. AlN/BN HNFs have been characterized for their chemical composition, surface morphology, crystal structure, and internal nanostructuremore » using X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction. Measurements confirmed the presence of crystalline hexagonal BN and AlN within the three dimensional (3D) network of bishell HNFs with relatively low impurity content. In contrast to the smooth surface of the inner AlN layer, outer BN coating showed a highly rough 3D morphology in the form of BN nano-needle crystallites. It is shown that the combination of electrospinning and plasma-assisted low-temperature ALD/CVD can produce highly controlled multi-layered bishell nitride ceramic hollow nanostructures. While electrospinning enables easy fabrication of nanofibrous template, self-limiting reactions of plasma-assisted ALD and sequential CVD provide control over the wall thicknesses of AlN and BN layers with sub-nanometer accuracy.« less

Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac){sub 2} reactions and enhancement by H{sub 2} and Ar plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Nicholas R.; Sun, Huaxing; Sharma, Kashish

2016-09-15

Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin(II) acetylacetonate [Sn(acac){sub 2}] as the reactants. Film thicknesses were monitored versus number of ALE reaction cycles at 275 °C using in situ spectroscopic ellipsometry (SE). A low etch rate of ∼0.07 Å/cycle was measured during etching of the first 40 Å of the film. This small etch rate corresponded with the AlO{sub x}N{sub y} layer on the AlN film. The etch rate then increased to ∼0.36 Å/cycle for the pure AlN films. In situ SE experiments established the HF and Sn(acac){submore » 2} exposures that were necessary for self-limiting surface reactions. In the proposed reaction mechanism for thermal AlN ALE, HF fluorinates the AlN film and produces an AlF{sub 3} layer on the surface. The metal precursor, Sn(acac){sub 2}, then accepts fluorine from the AlF{sub 3} layer and transfers an acac ligand to the AlF{sub 3} layer in a ligand-exchange reaction. The possible volatile etch products are SnF(acac) and either Al(acac){sub 3} or AlF(acac){sub 2}. Adding a H{sub 2} plasma exposure after each Sn(acac){sub 2} exposure dramatically increased the AlN etch rate from 0.36 to 1.96 Å/cycle. This enhanced etch rate is believed to result from the ability of the H{sub 2} plasma to remove acac surface species that may limit the AlN etch rate. The active agent from the H{sub 2} plasma is either hydrogen radicals or radiation. Adding an Ar plasma exposure after each Sn(acac){sub 2} exposure increased the AlN etch rate from 0.36 to 0.66 Å/cycle. This enhanced etch rate is attributed to either ions or radiation from the Ar plasma that may also lead to the desorption of acac surface species.« less

Strong Interlayer Magnon-Magnon Coupling in Magnetic Metal-Insulator Hybrid Nanostructures.

PubMed

Chen, Jilei; Liu, Chuanpu; Liu, Tao; Xiao, Yang; Xia, Ke; Bauer, Gerrit E W; Wu, Mingzhong; Yu, Haiming

2018-05-25

We observe strong interlayer magnon-magnon coupling in an on-chip nanomagnonic device at room temperature. Ferromagnetic nanowire arrays are integrated on a 20-nm-thick yttrium iron garnet (YIG) thin film strip. Large anticrossing gaps up to 1.58 GHz are observed between the ferromagnetic resonance of the nanowires and the in-plane standing spin waves of the YIG film. Control experiments and simulations reveal that both the interlayer exchange coupling and the dynamical dipolar coupling contribute to the observed anticrossings. The coupling strength is tunable by the magnetic configuration, allowing the coherent control of magnonic devices.

Strong Interlayer Magnon-Magnon Coupling in Magnetic Metal-Insulator Hybrid Nanostructures

NASA Astrophysics Data System (ADS)

Chen, Jilei; Liu, Chuanpu; Liu, Tao; Xiao, Yang; Xia, Ke; Bauer, Gerrit E. W.; Wu, Mingzhong; Yu, Haiming

2018-05-01

We observe strong interlayer magnon-magnon coupling in an on-chip nanomagnonic device at room temperature. Ferromagnetic nanowire arrays are integrated on a 20-nm-thick yttrium iron garnet (YIG) thin film strip. Large anticrossing gaps up to 1.58 GHz are observed between the ferromagnetic resonance of the nanowires and the in-plane standing spin waves of the YIG film. Control experiments and simulations reveal that both the interlayer exchange coupling and the dynamical dipolar coupling contribute to the observed anticrossings. The coupling strength is tunable by the magnetic configuration, allowing the coherent control of magnonic devices.

Improved dielectric properties of CaCu3Ti4O12 films with a CaTiO3 interlayer on Pt/TiO2/SiO2/Si substrates prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Lee, Sung-Yun; Kim, Hui Eun; Jo, William; Kim, Young-Hwan; Yoo, Sang-Im

2015-11-01

We report the greatly improved dielectric properties of CaCu3Ti4O12 (CCTO) films with a 60 nm-thick CaTiO3 (CTO) interlayer on Pt/TiO2/SiO2/Si substrates. Both CCTO films and CTO interlayers were prepared by pulsed laser deposition (PLD). With increasing the thickness of CCTO from 200 nm to 1.3 μm, the dielectric constants ( ɛ r ) at 10 kHz in both CCTO single-layered and CCTO/CTO double-layered films increased from ˜260 to ˜6000 and from ˜630 to ˜3700, respectively. Compared with CCTO single-layered films, CCTO/CTO double-layered films irrespective of CCTO film thickness exhibited a remarkable decrease in their dielectric losses ( tanδ) (<0.1 at the frequency region of 1 - 100 kHz) and highly reduced leakage current density at room temperature. The reduced leakage currents in CCTO/CTO double-layered films are attributable to relatively higher trap ionization energies in the Poole-Frenkel conduction model. [Figure not available: see fulltext.

Interlayer interaction and mechanical properties in multi-layer graphene, Boron-Nitride, Aluminum-Nitride and Gallium-Nitride graphene-like structure: A quantum-mechanical DFT study

NASA Astrophysics Data System (ADS)

Ghorbanzadeh Ahangari, Morteza; Fereidoon, A.; Hamed Mashhadzadeh, Amin

2017-12-01

In present study, we investigated mechanical, electronic and interlayer properties of mono, bi and 3layer of Boron-Nitride (B-N), Aluminum-Nitride (Al-N) and Gallium-Nitride (Ga-N) graphene sheets and compared these results with results obtained from carbonic graphenes (C-graphenes). For reaching this purpose, first we optimized the geometrical parameters of these graphenes by using density functional theory (DFT) method. Then we calculated Young's modulus of graphene sheet by compressing and then elongating these sheets in small increment. Our results indicates that Young's modulus of graphenes didn't changed obviously by increasing the number of layer sheet. We also found that carbonic graphene has greatest Young's modulus among another mentioned sheets because of smallest equilibrium distance between its elements. Next we modeled the van der Waals interfacial interaction exist between two sheets with classical spring model by using general form of Lennard-Jones (L-J) potential for all of mentioned graphenes. For calculating L-J parameters (ε and σ), the potential energy between layers of mentioned graphene as a function of the separation distance was plotted. Moreover, the density of states (DOS) are calculated to understand the electronic properties of these systems better.

Binary Compound Bilayer and Multilayer with Vertical Polarizations: Two-Dimensional Ferroelectrics, Multiferroics, and Nanogenerators.

PubMed

Li, Lei; Wu, Menghao

2017-06-27

Vertical ferroelectricity in two-dimensional (2D) materials is desirable for high-density data storage without quantum tunneling or high power consumption/dissipation, which still remains elusive due to the surface-depolarizing field. Herein, we report the first-principles evidence of 2D vertical ferroelectricity induced by interlayer translation, which exists extensively in the graphitic bilayer of BN, AlN, ZnO, MoS 2 , GaSe, etc.; the bilayer of some 2D ferromagnets like MXene, VS 2 , and MoN 2 can be even multiferroics with switchable magnetizations upon ferroelectric switching, rendering efficient reading and writing for high-density data storage. In particular, the electromechanical coupling between interlayer translation and potential can be used to drive the flow of electrons as nanogenerators for harvesting energy from human activities, ocean waves, mechanical vibration, etc. A ferroelectric superlattice with spatial varying potential can be formed in a bilayer Moire pattern upon a small twist or strain, making it possible to generate periodic n/p doped-domains and shape the periodicity of the potential energy landscape. Finally, some of their multilayer counterparts with wurtzite structures like a ZnO multilayer are revealed to exhibit another type of vertical ferroelectricity with greatly enhanced polarizations.

Domain size and structure in exchange coupled [Co/Pt]/NiO/[Co/Pt] multilayers.

PubMed

Baruth, A; Adenwalla, S

2011-09-21

We investigate the competing effects of interlayer exchange coupling and magnetostatic coupling in the magnetic heterostructure ([Co/Pt]/NiO/[Co/Pt]) with perpendicular magnetic anisotropy (PMA). This particular heterostructure is unique among coupled materials with PMA in directly exhibiting both ferromagnetic and antiferromagnetic coupling, oscillating between the two as a function of spacer layer thickness. By systematically tuning the coupling interactions via a wedge-shaped NiO spacer layer, we explore the energetics that dictate magnetic domain formation using high resolution magnetic force microscopy coupled with the magneto-optical Kerr effect. This technique probes the microscopic and macroscopic magnetic behavior as a continuous function of thickness and the interlayer exchange coupling, including the regions where interlayer coupling goes through zero. We see significant changes in domain structure based on the sign of coupling, and also show that magnetic domain size is directly related to the magnitude of the interlayer exchange coupling energy, which generally dominates over the magnetostatic interactions. When magnetostatic interactions become comparable to the interlayer exchange coupling, a delicate interplay between the differing energy contributions is apparent and energy scales are extracted. The results are of intense interest to the magnetic recording industry and also illustrate a relatively new avenue of undiscovered physics, primarily dealing with the delicate balance of energies in the formation of magnetic domains for coupled systems with PMA, defining limits on domain size as well as the interplay between roughness, domains and magnetic coupling.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis R.; Griffin, Ben

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

TEM Observation of the Ti Interlayer Between SiC Substrates During Diffusion Bonding

NASA Technical Reports Server (NTRS)

Tsuda, Hiroshi; Mori, Shigeo; Halbig, Michael C.; Singh, Mori

2012-01-01

Diffusion bonding was carried out to join SiC to SiC substrates using titanium interlayers. In this study, 10 m and 20 m thick physical vapor deposited (PVD) Ti surface coatings, and 10 and 20 m thick Ti foils were used. Diffusion bonding was performed at 1250 C for PVD Ti coatings and 1200 C for Ti foil. This study investigates the microstructures of the phases formed during diffusion bonding through TEM and selected-area diffraction analysis of a sample prepared with an FIB, which allows samples to be taken from the reacted area. In all samples, Ti3SiC2, Ti5Si3Cx and TiSi2 phases were identified. In addition, TiC and unknown phases also appeared in the samples in which Ti foils were used as interlayers. Furthermore, Ti3SiC2 phases show high concentration and Ti5Si3Cx formed less when samples were processed at a higher temperature and thinner interlayer samples were used. It appears that the formation of microcracks is caused by the presence of intermediate phase Ti5Si3Cx, which has anisotropic thermal expansion, and by the presence of an unidentified Ti-Si-C ternary phase with relatively low Si content.

Ferromagnetic resonance in coupled permalloy double films separated by a Cu interlayer

NASA Astrophysics Data System (ADS)

Maksymowicz, A. Z.; Whiting, J. S. S.; Watson, M. L.; Chambers, A.

1991-03-01

Ferromagnetic resonance (FMR) at 16 GHz was used to study the magnetic coupling between two-layers of permalloy separated by a nonmagnetic Cu layer. Samples with the same thickness (600 Å) of both permalloy layers were deposited from e-gun sources onto glass substrates in UHV. The thickness d of the Cu interlayer was varied from 5 to 37 Å. The exchange coupling energy ( E = - KM1· M2) model was used to describe the interaction between the two magnetic layers. It was found from the ferromagnetic resonance data in the perpendicular configuration that K( d) follows an exponential law, K = K0e - d/ q, where q = 9.3 Å.

Effect of odanacatib on bone turnover markers, bone density and geometry of the spine and hip of ovariectomized monkeys: a head-to-head comparison with alendronate.

PubMed

Williams, Donald S; McCracken, Paul J; Purcell, Mona; Pickarski, Maureen; Mathers, Parker D; Savitz, Alan T; Szumiloski, John; Jayakar, Richa Y; Somayajula, Sangeetha; Krause, Stephen; Brown, Keenan; Winkelmann, Christopher T; Scott, Boyd B; Cook, Lynn; Motzel, Sherri L; Hargreaves, Richard; Evelhoch, Jeffrey L; Cabal, Antonio; Dardzinski, Bernard J; Hangartner, Thomas N; Duong, Le T

2013-10-01

Odanacatib (ODN) is a selective and reversible Cathepsin K (CatK) inhibitor currently being developed as a once weekly treatment for osteoporosis. Here, effects of ODN compared to alendronate (ALN) on bone turnover, DXA-based areal bone mineral density (aBMD), QCT-based volumetric BMD (vBMD) and geometric parameters were studied in ovariectomized (OVX) rhesus monkeys. Treatment was initiated 10 days after ovariectomy and continued for 20 months. The study consisted of four groups: L-ODN (2 mg/kg, daily p.o.), H-ODN (8/4 mg/kg daily p.o.), ALN (15 μg/kg, twice weekly, s.c.), and VEH (vehicle, daily, p.o.). L-ODN and ALN doses were selected to approximate the clinical exposures of the ODN 50-mg and ALN 70-mg once-weekly, respectively. L-ODN and ALN effectively reduced bone resorption markers uNTx and sCTx compared to VEH. There was no additional efficacy with these markers achieved with H-ODN. Conversely, ODN displayed inversely dose-dependent reduction of bone formation markers, sP1NP and sBSAP, and L-ODN reduced formation to a lesser degree than ALN. At month 18 post-OVX, L-ODN showed robust increases in lumbar spine aBMD (11.4%, p<0.001), spine trabecular vBMD (13.7%, p<0.001), femoral neck (FN) integral (int) vBMD (9.0%, p<0.001) and sub-trochanteric proximal femur (SubTrPF) int vBMD, (6.4%, p<0.001) compared to baseline. L-ODN significantly increased FN cortical thickness (Ct.Th) and cortical bone mineral content (Ct.BMC) by 22.5% (p<0.001) and 21.8% (p<0.001), respectively, and SubTrPF Ct.Th and Ct.BMC by 10.9% (p<0.001) and 11.3% (p<0.001) respectively. Compared to ALN, L-ODN significantly increased FN Ct. BMC by 8.7% (p<0.05), and SubTrPF Ct.Th by 7.6% (p<0.05) and Ct.BMC by 6.2% (p<0.05). H-ODN showed no additional efficacy compared to L-ODN in OVX-monkeys in prevention mode. Taken together, the results from this study have demonstrated that administration of ODN at levels which approximate clinical exposure in OVX-monkeys had comparable efficacy to ALN in DXA-based aBMD and QCT-based vBMD. However, FN cortical mineral content clearly demonstrated superior efficacy of ODN versus ALN in this model of estrogen-deficient non-human primates. © 2013 Elsevier Inc. All rights reserved.

Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

PubMed

Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

2017-04-12

Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation

NASA Astrophysics Data System (ADS)

Muneshwar, Triratna; Cadien, Ken

2018-03-01

In this article we compare x-ray photoelectron spectroscopy (XPS) measurements on bare- and capped- zirconium nitride (ZrN) films to investigate the effect of ambient sample oxidation on the detected bound O in the form of oxide ZrO2 and/or oxynitride ZrOxNy. ZrN films in both bare- and Al2O3/AlN capped- XPS samples were grown by plasma-enhanced atomic layer deposition (PEALD) technique using tetrakis dimethylamino zirconium (TDMAZr) precursor, forming gas (5% H2, rest N2) inductively coupled plasma (ICP), and as received research grade process gases under identical process conditions. Capped samples were prepared by depositing 1 nm thick PEALD AlN on ZrN, followed by additional deposition of 1 nm thick ALD Al2O3, without venting of ALD reactor. On bare ZrN sample at room temperature, spectroscopic ellipsometry (SE) measurements with increasing ambient exposure times (texp) showed a self-limiting surface oxidation with the oxide thickness (dox) approaching 3.7 ± 0.02 nm for texp > 120 min. In XPS data measured prior to sample sputtering (tsput = 0), ZrO2 and ZrOxNy were detected in bare- samples, whereas only ZrN and Al2O3/AlN from capping layer were detected in capped- samples. For bare-ZrN samples, appearance of ZrO2 and ZrOxNy up to sputter depth (dsput) of 15 nm in depth-profile XPS data is in contradiction with measured dox = 3.7 nm, but explained from sputtering induced atomic inter-diffusion within analyzed sample. Appearance of artifacts in the XPS spectra from moderately sputtered (dsput = 0.2 nm and 0.4 nm) capped-ZrN sample, provides an evidence to ion-bombardment induced modifications within analyzed sample.

RERTR-10 Irradiation Summary Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

D. M. Perez

2011-05-01

The Reduced Enrichment for Research and Test Reactor (RERTR) experiment RERTR-10 was designed to further test the effectiveness of modified fuel/clad interfaces in monolithic fuel plates. The experiment was conducted in two campaigns: RERTR-10A and RERTR-10B. The fuel plates tested in RERTR-10A were all fabricated by Hot Isostatic Pressing (HIP) and were designed to evaluate the effect of various Si levels in the interlayer and the thickness of the Zr interlayer (0.001”) using 0.010” and 0.020” nominal foil thicknesses. The fuel plates in RERTR-10B were fabricated by Friction Bonding (FB) with two different thickness Si layers and Nb and Zrmore » diffusion barriers.1 The following report summarizes the life of the RERTR-10A/B experiment through end of irradiation, including as-run neutronic analysis results, thermal analysis results and hydraulic testing results.« less

AlN grown on Si(1 1 1) by ammonia-molecular beam epitaxy in the 900-1200 °C temperature range

NASA Astrophysics Data System (ADS)

Tamariz, Sebastian; Martin, Denis; Grandjean, Nicolas

2017-10-01

We present a comprehensive study of AlN growth on Si(1 1 1) substrate by gas source molecular beam epitaxy with ammonia as nitrogen precursor in the high temperature range. We first demonstrate that the observation of the silicon 7 × 7 surface reconstruction by reflection high energy electron diffraction can be misleading as this technique is not sensitive to low density surface defects like SiC crystallites. A careful in situ cleaning procedure with annealing cycles at 1100 °C allows getting rid of any surface defects, as shown by atomic force microscopy imaging. Then, we explore the effect of the growth temperature on the surface morphology and structural properties of 100 nm thick AlN epilayers. At 1200 °C, the growth proceeds with the step flow mode regime, which induces spiral-growth around screw-type dislocations and therefore surface roughening. On the other hand, a smooth surface morphology can be achieved by setting the temperature at 1100 °C, which corresponds to the growth mode transition from two-dimensional nucleation to step flow. A further decrease of the growth temperature to 900 °C leads to surface defects ascribed to polarity inversion domains. Similar defects are observed for growths performed at 1100 °C when the NH3 flow is reduced below 100 sccm. This points out the sensitivity of AlN to the surface stoichiometry.

Optimization of polarization compensating interlayers for InGaN/GaN MQW solar cells

NASA Astrophysics Data System (ADS)

Saini, Basant; Sharma, Sugandha; Kaur, Ravinder; Pal, Suchandan; Kapoor, Avinashi

2018-05-01

Optimization of polarization compensating interlayer (PCI) is performed numerically to improve the photovoltaic properties of InGaN/GaN multiple quantum well solar cell (MQWSC). Simulations are performed to investigate the effect of change in thickness and composition of PCI on the performance of cell. Short circuit current density is increased as we increase the thickness of the PCI. Changing the constitution of PCI not only mitigates the negative effects of polarization-induced electric fields but also reduces the high potential barrier existing at the QW/p-GaN hetero-interface. This claim is validated by the performance shown by the cell containing optimized PCI, as it shows an improved efficiency of 1.54 % under AM1.5G illumination.

Fabrication of superconductor-ferromagnet-insulator-superconductor Josephson junctions with critical current uniformity applicable to integrated circuits

NASA Astrophysics Data System (ADS)

Ito, Hiroshi; Taniguchi, Soya; Ishikawa, Kouta; Akaike, Hiroyuki; Fujimaki, Akira

2017-03-01

Nb Josephson junctions (JJs) were fabricated with a Pd89Ni11 ferromagnetic interlayer and an AlO x tunnel barrier layer for use in large-scale superconducting integrated circuits. The junctions had a small critical current (I c) spread, where the standard deviation 1σ was less than 2% at 4.2 K for junctions with the same designed size. It was observed that the electrical behavior of the junctions could be controlled by manipulating the film thickness of the PdNi interlayer. The junctions behaved as a π-JJ for thicknesses of 9 and 11 nm, showing 1σ in the I c spread of 1.2% for 9 nm.

In vitro evaluation of diamond-like carbon coatings with a Si/SiC x interlayer on surgical NiTi alloy

NASA Astrophysics Data System (ADS)

Liu, C. L.; Chu, Paul K.; Yang, D. Z.

2007-04-01

Diamond-like carbon (DLC) coatings were produced with a Si/SiCx interlayer by a hybrid plasma immersion ion implantation and deposition process to improve the adhesion between the carbon layer and surgical NiTi alloy substrate. The structure, mechanical properties, corrosion resistance and biocompatibility of the coatings were evaluated in vitro by Raman spectroscopy, pin-on-disk tests, potentiodynamic polarization tests and simulated fluid immersion tests. The DLC coatings with a Si/SiCx interlayer of a suitable thickness have better adhesion, lower friction coefficients and enhanced corrosion resistance. In the simulated body fluid tests, the coatings exhibit effective corrosion protection and good biocompatibility as indicated by PC12 cell cultures. DLC films fabricated on a Si/SiCx interlayer have high potential as protective coatings for biomedical NiTi materials.

Effect of Mg interlayer on perpendicular magnetic anisotropy of CoFeB films in MgO/Mg/CoFeB/Ta structure

NASA Astrophysics Data System (ADS)

Ma, Q. L.; Iihama, S.; Kubota, T.; Zhang, X. M.; Mizukami, S.; Ando, Y.; Miyazaki, T.

2012-09-01

The effects of Mg metallic interlayer on the magnetic properties of thin CoFeB films in MgO/Mg (tMg)/CoFeB (1.2 nm)/Ta structures were studied in this letter. Our experimental result shows that the CoFeB film exhibits perpendicular magnetic anisotropy (PMA) when the CoFeB and MgO layers are separated by a metallic Mg layer with a maximum thickness of 0.8 nm. The origin of PMA was discussed by considering the preferential transmission of the Δ1 symmetry preserved by the Mg interlayer in crystallized MgO/Mg/CoFeB/Ta. In addition, the thin Mg interlayer also contributes to enhancing the thermal stability and reducing the effective damping constant and coercivity of the CoFeB film.

PNR studies of spin-flop and spin-flip processes in magnetic multilayer, NiFeCo/Cu system

NASA Astrophysics Data System (ADS)

Ambaye, Hailemariam; Sato, Hideo; Mankey, Gary; Lauter, Valeria; Goyette, Richard

2010-03-01

Early GMR devices relied on antiferromagnetic interlayer coupling to work and it was shown that the interlayer coupling is in fact oscillatory, with both ferromagnetic and antiferromagnetic interlayer exchange depending on the thickness of the nonmagnetic layer [1,2]. Different competing interactions such as magnetic anisotropy and interlayer afm coupling occur in multilayer systems. Distinguishing the individual contributions is one of the major challenges in the study of multilayered systems. We used polarized neutron reflectivity with full polarization analysis to understand how the magnetization is distributed through the system and how deep the flipping process of the magnetization goes into the system. The easy axis field dependence of occurrence of spin-flop and spin-flip events in the system will be reported. [4pt] [1] S. S. P. Parkin, Phys. Rev. Lett. 71, 1641 (1993).[0pt] [2] D. Elefant, et al., Phys. Rev. B 77, 014426 (2008).

Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, J. Douglas

2007-01-01

A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.

Very high S-band microwave absorption of carbon nanotube buckypapers with Mn nanoparticle interlayers

NASA Astrophysics Data System (ADS)

Lu, Shaowei; Bai, Yaoyao; Wang, Jijie; Zhang, Lu; Tian, Caijiao; Ma, Keming; Wang, Xiaoqiang

2018-03-01

Flexible and high-performance electromagnetic absorbing materials of multi-walled carbon nanotube (MWCNT) buckypapers with Mn nanoparticles (NPSs) interlayer were fabricated via monodisperse solutions through layer by layer vacuum filtration method. The morphology and element composition of buckypapers were characterized by scanning electron microscopy, energy dispersive spectrometer, and X-ray diffraction. The formation of flexible MWCNT buckypapers with Mn NPS (0-30 wt. %) interlayer was attributed to nanostructure and morphology of the samples. When the blended Mn NPS content in buckypapers is 20 wt. %, there are evidently two larger absorption peaks (-13.2 dB at 3.41 GHz, -15.6 dB at 3.52 GHz) of the buckypaper with an absorbing thickness of 0.1 mm. The fundamental microwave absorption mechanism of the buckypapers is discussed. This work opens a new pathway towards tuning microwave absorbers performance and this method can be extended to exploit other excellent microwave absorbers with interlayer.

Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

NASA Astrophysics Data System (ADS)

Kim, Jong Cheol; Kim, Jongsik; Xin, Yan; Lee, Jinhyung; Kim, Young-Gyun; Subhash, Ghatu; Singh, Rajiv K.; Arjunan, Arul C.; Lee, Haigun

2018-05-01

The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (˜3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

Catalyst-Free Growth of Three-Dimensional Graphene Flakes and Graphene/g-C₃N₄ Composite for Hydrocarbon Oxidation.

PubMed

Chen, Ke; Chai, Zhigang; Li, Cong; Shi, Liurong; Liu, Mengxi; Xie, Qin; Zhang, Yanfeng; Xu, Dongsheng; Manivannan, Ayyakkannu; Liu, Zhongfan

2016-03-22

Mass production of high-quality graphene flakes is important for commercial applications. Graphene microsheets have been produced on an industrial scale by chemical and liquid-phase exfoliation of graphite. However, strong-interaction-induced interlayer aggregation usually leads to the degradation of their intrinsic properties. Moreover, the crystallinity or layer-thickness controllability is not so perfect to fulfill the requirement for advanced technologies. Herein, we report a quartz-powder-derived chemical vapor deposition growth of three-dimensional (3D) high-quality graphene flakes and demonstrate the fabrication and application of graphene/g-C3N4 composites. The graphene flakes obtained after the removal of growth substrates exhibit the 3D curved microstructure, controllable layer thickness, good crystallinity, as well as weak interlayer interactions suitable for preventing the interlayer stacking. Benefiting from this, we achieved the direct synthesis of g-C3N4 on purified graphene flakes to form the uniform graphene/g-C3N4 composite, which provides efficient electron transfer interfaces to boost its catalytic oxidation activity of cycloalkane with relatively high yield, good selectivity, and reliable stability.

Interlayer coupling through a dimensionality-induced magnetic state

PubMed Central

Gibert, M.; Viret, M.; Zubko, P.; Jaouen, N.; Tonnerre, J.-M.; Torres-Pardo, A.; Catalano, S.; Gloter, A.; Stéphan, O.; Triscone, J.-M.

2016-01-01

Dimensionality is known to play an important role in many compounds for which ultrathin layers can behave very differently from the bulk. This is especially true for the paramagnetic metal LaNiO3, which can become insulating and magnetic when only a few monolayers thick. We show here that an induced antiferromagnetic order can be stabilized in the [111] direction by interfacial coupling to the insulating ferromagnet LaMnO3, and used to generate interlayer magnetic coupling of a nature that depends on the exact number of LaNiO3 monolayers. For 7-monolayer-thick LaNiO3/LaMnO3 superlattices, negative and positive exchange bias, as well as antiferromagnetic interlayer coupling are observed in different temperature windows. All three behaviours are explained based on the emergence of a (¼,¼,¼)-wavevector antiferromagnetic structure in LaNiO3 and the presence of interface asymmetry with LaMnO3. This dimensionality-induced magnetic order can be used to tailor a broad range of magnetic properties in well-designed superlattice-based devices. PMID:27079668

Propagation behavior of two transverse surface waves in a three-layer piezoelectric/piezomagnetic structure

NASA Astrophysics Data System (ADS)

Nie, Guoquan; Liu, Jinxi; Liu, Xianglin

2017-10-01

Propagation of transverse surface waves in a three-layer system consisting of a piezoelectric/piezomagnetic (PE/PM) bi-layer bonded on an elastic half-space is theoretically investigated in this paper. Dispersion relations and mode shapes for transverse surface waves are obtained in closed form under electrically open and shorted boundary conditions at the upper surface. Two transverse surface waves related both to Love-type wave and Bleustein-Gulyaev (B-G) type wave propagating in corresponding three-layer structure are discussed through numerically solving the derived dispersion equation. The results show that Love-type wave possesses the property of multiple modes, it can exist all of the values of wavenumber for every selected thickness ratios regardless of the electrical boundary conditions. The presence of PM interlayer makes the phase velocity of Love-type wave decrease. There exist two modes allowing the propagation of B-G type wave under electrically shorted circuit, while only one mode appears in the case of electrically open circuit. The modes of B-G type wave are combinations of partly normal dispersion and partly anomalous dispersion whether the electrically open or shorted. The existence range of mode for electrically open case is greatly related to the thickness ratios, with the thickness of PM interlayer increasing the wavenumber range for existence of B-G type wave quickly shortened. When the thickness ratio is large enough, the wavenumber range of the second mode for electrically shorted circuit is extremely narrow which can be used to remove as an undesired mode. The propagation behaviors and mode shapes of transverse surface waves can be regulated by the modification of the thickness of PM interlayer. The obtained results provide a theoretical prediction and basis for applications of PE-PM composites and acoustic wave devices.

Effects of plasma pretreatment on the process of self-forming Cu-Mn alloy barriers for Cu interconnects

NASA Astrophysics Data System (ADS)

Park, Jae-Hyung; Han, Dong-Suk; Kim, Kyoung-Deok; Park, Jong-Wan

2018-02-01

This study investigated the effect of plasma pretreatment on the process of a self-forming Cu-Mn alloy barrier on porous low-k dielectrics. To study the effects of plasma on the performance of a self-formed Mn-based barrier, low-k dielectrics were pretreated with H2 plasma or NH3 plasma. Cu-Mn alloy materials on low-k substrates that were subject to pretreatment with H2 plasma exhibited lower electrical resistivity values and the formation of thicker Mn-based interlayers than those on low-k substrates that were subject to pretreatment with NH3 plasma. Transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS), and thermal stability analyses demonstrated the exceptional performance of the Mn-based interlayer on plasma-pretreated low-k substrates with regard to thickness, chemical composition, and reliability. Plasma treating with H2 gas formed hydrophilic Si-OH bonds on the surface of the low-k layer, resulting in Mn-based interlayers with greater thickness after annealing. However, additional moisture uptake was induced on the surface of the low-k dielectric, degrading electrical reliability. By contrast, plasma treating with NH3 gas was less effective with regard to forming a Mn-based interlayer, but produced a Si-N/C-N layer on the low-k surface, yielding improved barrier characteristics.

Deposition and thermal characterization of nano-structured aluminum nitride thin film on Cu-W substrate for high power light emitting diode package.

PubMed

Cho, Hyun Min; Kim, Min-Sun

2014-08-01

In this study, we developed AlN thick film on metal substrate for hybrid type LED package such as chip on board (COB) using metal printed circuit board (PCB). Conventional metal PCB uses ceramic-polymer composite as electrical insulating layer. Thermal conductivities of such type dielectric film are typically in the range of 1~4 W/m · K depending on the ceramic filler. Also, Al or Cu alloy are mainly used for metal base for high thermal conduction to dissipate heat from thermal source mounted on metal PCB. Here we used Cu-W alloy with low thermal expansion coefficient as metal substrate to reduce thermal stress between insulating layer and base metal. AlN with polyimide (PI) powder were used as starting materials for deposition. We could obtain very high thermal conductivity of 28.3 W/m · K from deposited AlN-PI thin film by AlN-3 wt% PI powder. We made hybrid type high power LED package using AlN-PI thin film. We tested thermal performance of this film by thermal transient measurement and compared with conventional metal PCB substrate.

Design and Optimization of AlN based RF MEMS Switches

NASA Astrophysics Data System (ADS)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

ScAlN etch mask for highly selective silicon etching

DOE PAGES

Henry, Michael David; Young, Travis R.; Griffin, Ben

2017-09-08

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Changes in intracortical microporosities induced by pharmaceutical treatment of osteoporosis as detected by high resolution micro-CT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tommasini S. M.; Miller L.; Trinward, A.

Bone's microporosities play important biologic and mechanical roles. Here, we quantified 3D changes in cortical osteocyte-lacunae and other small porosities induced by estrogen withdrawal and two different osteoporosistreatments. Unlike 2D measurements, these data collected via synchrotron radiation-based {mu}CT describe the size and 3D spatial distribution of a large number of porous structures. Six-month old female Sprague-Dawley rats were separated into four groups of age-matched controls, untreated OVX, OVX treated with PTH, and OVX treated with Alendronate (ALN). Intracortical microporosity of the medial quadrant of the femoral diaphysis was quantified at endosteal, intracortical, and periosteal regions of the samples, allowing themore » quantification of osteocyte lacunae that were formed primarily before versus after the start of treatment. Across the overall thickness of the medial cortex, lacunar volume fraction (Lc.V/TV) was significantly lower in ALN treated rats compared to PTH. In the endosteal region, average osteocyte lacunar volume (< Lc.V >) of untreated OVX rats was significantly lower than in age-matched controls, indicating a decrease in osteocyte lacunar size in bone formed on the endosteal surface after estrogen withdrawal. The effect of treatment (OVX, ALN, PTH) on the number of lacunae per tissue volume (Lc.N/TV) was dependent on the specific location within the cortex (endosteal, intracortical, periosteal). In both the endosteal and intracortical regions, Lc.N/TV was significantly lower in ALN than in untreated OVX, suggesting a site-specific effect in osteocyte lacuna density with ALN treatment. There also were a significantly greater number of small pores (5-100 {micro}m{sup 3} in volume) in the endosteal region for PTH compared to ALN. The mechanical impact of this altered microporosity structure is unknown, but might serve to enhance, rather than deteriorate bone strength with PTH treatment, as smaller osteocyte lacunae may be better able to absorb shear forces than larger lacunae. Together, these data demonstrate that current treatments of osteoporosis can alter the number, size, and distribution of microporosities in cortical rat lamellar bone.« less

Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

NASA Astrophysics Data System (ADS)

Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

2017-11-01

High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

Interlayer exchange coupling in complex magnetic multilayers

NASA Astrophysics Data System (ADS)

Xiang-dong, Zhang; Lie-ming, Li; Bo-zang, Li; Fu-cho, Pu

1998-07-01

We extend the hole confinement model of Edwards et al. to the problem of two kinds of complex magnetic sandwich structures. One is the magnetic sandwich covered on both sides by nonmagnetic films (case 1) and the other is that covered by magnetic films (case 2). The interlayer exchange coupling and the angular dependence of coupling energy in the two cases are investigated systematically. For case 1, our results show that the magnetic and outer nonmagnetic films influence significantly the oscillation behavior of exchange coupling and the appearance of noncollinear exchange coupling is very sensitive to the thickness of magnetic and outer nonmagnetic layers. Our results also show that the nonoscillatory component of the coupling generally varies with the thickness of magnetic (outer nonmagnetic) films and the results in the case where the thickness of both magnetic (outer nonmagnetic) films vary simultaneously are significantly different from that in the case where the thickness of one of the two magnetic (outer nonmagnetic) films is fixed while the other is varied, which is qualitatively in agreement with the experimental measurements. For case 2, the exponential dependence of exchange coupling on the thickness of the intermagnetic layer has been obtained, similar to the Parkin's experimental results for giant magnetoresistance.

Some aspects of the adsorption of glyphosate and its degradation products on montmorillonite.

PubMed

Flores, Federico M; Torres Sánchez, Rosa M; Dos Santos Afonso, Maria

2018-04-25

The most worldwide used herbicide is glyphosate, phosphonomethylglycine (PMG). Consequently, a significant amount of PMG, its metabolites (sarcosine, SAR, and aminomethylphosphonic acid, AMPA) and the degradation product, methylphosphonic acid (MPA), reaches the soil, which acts as final sink. Because clays are one of the most reactive components of soils, expansive clays such as montmorillonite (Mt) are used to retain agriculture contaminants with some success. In this work, as a preliminary step for the evaluation of the risk that PMG, SAR, AMPA, and MPA occurrence could have on the environment, their adsorption on Mt surface was performed. The adsorption process was analyzed at constant adsorbate concentrations and two pH values to take into account the different protonation states of the amino group. DTA, XRD, zeta potential measurements, and XPS were used to identify the interactions or association mechanisms with the clay surface, the entry of adsorbates into the Mt interlayer, and electric charge changes on the Mt surface, and evaluate the acid-base surface complex constants, respectively. The interlayer thickness in acid media indicated that adsorbates are able to enter the interlayer in planar form. Besides, for the Mt-PMG sample, some PMG molecules could be also inserted as a bilayer or with a tilt angle of 52.4° in the interlayer. However, in alkaline media, the interlayer thickness indicated that the adsorbate arrangement differed from that of acidic media where PMG and MPA could have more than one orientation. The surface complex deprotonation constants were determined for the =NH +2  ⇆ =NH+H + process, being 3.0, 5.0, and 7.3 for PMG, AMPA, and SAR, respectively.

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

NASA Astrophysics Data System (ADS)

Reddy, P. R. Sekhar; Janardhanam, V.; Jyothi, I.; Harsha, Cirandur Sri; Reddy, V. Rajagopal; Lee, Sung-Nam; Won, Jonghan; Choi, Chel-Jong

2018-02-01

Effects of the thickness of copper phthalocyanine (CuPc) film (2, 5, 10, 15, 20, 30 and 40 nm) on the surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction have been investigated. The optical band gap of CuPc film was increased with increase in the thickness of the CuPc film. The electrical properties of the Au/n-Si Schottky junction and Au/CuPc/n-Si heterojunctions were characterized by current-voltage ( I-V) and capacitance-voltage ( C-V) measurements. The barrier height, ideality factor and series resistance were estimated based on the I-V, Cheung's and Norde's methods. The barrier heights increased with increasing CuPc interlayer thickness up to 15 nm and remained constant for thickness above 20 nm, associated with the incapability of the generated carriers to reach the interface. The discrepancy in the barrier heights obtained from I-V and C-V measurements indicates the presence of barrier inhomogeneity at the interface as evidenced by higher ideality factor values. It can be concluded that the electrical properties of Au/n-Si Schottky junction can be significantly altered with the variation of CuPc thickness as interlayer.

Control of interlayer physics in 2H transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Wang, Kuang-Chung; Stanev, Teodor K.; Valencia, Daniel; Charles, James; Henning, Alex; Sangwan, Vinod K.; Lahiri, Aritra; Mejia, Daniel; Sarangapani, Prasad; Povolotskyi, Michael; Afzalian, Aryan; Maassen, Jesse; Klimeck, Gerhard; Hersam, Mark C.; Lauhon, Lincoln J.; Stern, Nathaniel P.; Kubis, Tillmann

2017-12-01

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers—depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.

Influence of Ni Interlayer on Microstructure and Mechanical Properties of Mg/Al Bimetallic Castings

NASA Astrophysics Data System (ADS)

Liu, Ning; Liu, Canchun; Liang, Chunyong; Zhang, Yongguang

2018-05-01

Dissimilar joining of magnesium and aluminum using a compound casting process was investigated in the present work. For the first time, a Ni interlayer prepared by plasma spraying was inserted between the two base metals to improve the interfacial characteristics. Examination of the interfacial regions using scanning electron microscopy, energy-dispersive X-ray spectroscopy, electron probe microanalysis, and X-ray diffraction revealed the formation of a three-layered interface between Mg and Al without the interlayer. The thickness of the interface was approximately 600 μm when the casting was performed at 700 °C and increased with increasing casting temperature. However, with the addition of the Ni interlayer, the Al-Mg reaction was successfully prevented, and metallurgical bonding between the Ni interlayer and two base metals was achieved at a casting temperature of 700 °C. Upon increasing this temperature, Mg-Ni and Al-Ni intermetallics were generated at the separate interfaces. The shear strength of the Mg/Al bimetallic castings with the Ni interlayer was substantially improved compared with that of the direct Mg/Al joint, with a maximum value of 25.4 MPa achieved at 700 °C. Fracture occurred mainly along the Mg/Ni interface for the Mg/Ni/Al multilayer structure castings.

Through-thickness thermal conductivity enhancement of graphite film/epoxy composite via short duration acidizing modification

NASA Astrophysics Data System (ADS)

Wang, Han; Wang, Shaokai; Lu, Weibang; Li, Min; Gu, Yizhou; Zhang, Yongyi; Zhang, Zuoguang

2018-06-01

Graphite films have excellent in-plane thermal conductivity but extremely low through-thickness thermal conductivity because of their intrinsic inter-layer spaces. To improve the inter-layer heat transfer of graphite films, we developed a simple interfacial modification with a short duration mixed-acid treatment. The effects of the mixture ratio of sulfuric and nitric acids and treatment time on the through-thickness thermal properties of graphite films were studied. The modification increased the through-thickness thermal conductivity by 27% and 42% for the graphite film and its composite, respectively. X-ray photoelectron spectroscopy, X-ray powder diffraction, and scanning electron microscopy results indicated that the acidification process had two competing effects: the positive contribution made by the enhanced interaction between the graphite layers induced by the functional groups and the negative effect from the destruction of the graphite layers. As a result, an optimal acidification method was found to be sulfuric/nitric acid treatment with a mixture ratio of 3:1 for 15 min. The resultant through-thickness thermal conductivity of the graphite film could be improved to 0.674 W/mK, and the corresponding graphite/epoxy composite shows a through-thickness thermal conductivity of 0.587 W/mK. This method can be directly used for graphite films and their composite fabrication to improve through-thickness thermal conductivity.

The fabrication, testing and delivery of boron/epoxy and graphite/epoxy nondestructive test standards

NASA Technical Reports Server (NTRS)

Pless, W. M.; Lewis, W. H.

1971-01-01

A description is given of the boron/epoxy and graphite/epoxy nondestructive test standards which were fabricated, tested and delivered to the National Aeronautics and Space Administration. Detailed design drawings of the standards are included to show the general structures and the types and location of simulated defects built into the panels. The panels were laminates with plies laid up in the 0 deg, + or - 45 deg, and 90 deg orientations and containing either titanium substrates or interlayered titanium perforated shims. Panel thickness was incrementally stepped from 2.36 mm (0.093 in.) to 12.7 mm (0.500 in.) for the graphite/epoxy standards, and from 2.36 mm (0.093 in.) to 6.35 mm (0.25 in.) for the boron/epoxy standards except for the panels with interlayered shims which were 2.9 mm (0.113 in.) maximum thickness. The panel internal conditions included defect free regions, resin variations, density/porosity variations, cure variations, delaminations/disbonds at substrate bondlines and between layers, inclusions, and interlayered shims. Ultrasonic pulse echo C-scan and low-kilovoltage X-ray techniques were used to evaluate and verify the internal conditions of the panels.

Comparative Study of HfTa-based gate-dielectric Ge metal-oxide-semiconductor capacitors with and without AlON interlayer

NASA Astrophysics Data System (ADS)

Xu, J. P.; Zhang, X. F.; Li, C. X.; Chan, C. L.; Lai, P. T.

2010-04-01

The electrical properties and high-field reliability of HfTa-based gate-dielectric metal-oxide-semiconductor (MOS) devices with and without AlON interlayer on Ge substrate are investigated. Experimental results show that the MOS capacitor with HfTaON/AlON stack gate dielectric exhibits low interface-state/oxide-charge densities, low gate leakage, small capacitance equivalent thickness (˜1.1 nm), and high dielectric constant (˜20). All of these should be attributed to the blocking role of the ultrathin AlON interlayer against interdiffusions of Ge, Hf, and Ta and penetration of O into the Ge substrate, with the latter effectively suppressing the unintentional formation of unstable poor-quality low- k GeO x and giving a superior AlON/Ge interface. Moreover, incorporation of N into both the interlayer and high- k dielectric further improves the device reliability under high-field stress through the formation of strong N-related bonds.

Ultraviolet Polariton Laser

DTIC Science & Technology

2015-09-17

Ultraviolet Polariton Laser Significant progress was achieved in the epitaxy of deep UV AlN/ AlGaN Bragg mirrors and microcavity structures paving...the way to the successful fabrication of vertical cavity emitting laser structures and polariton lasers. For the first time DBRs providing sufficient...high reflectivity for polariton emission were demonstrated. Thanks to a developed strain balanced Al0.85Ga0.15N template, the critical thickness

Alendronate (ALN) combined with Osteoprotegerin (OPG) significantly improves mechanical properties of long bone than the single use of ALN or OPG in the ovariectomized rats

PubMed Central

2011-01-01

Background Alendronate (ALN) is the most common form of bisphosphonates used for the treatment of osteoporosis. Osteoprotegerin (OPG) has also been shown to reduce osteoporotic changes in both humans and experimental animals after systemic administration. The aim of this current study was to test if the anti-resorption effects of ALN may be enhanced when used in combination with OPG. Objectives To investigate the effects of ALN, OPG or combined on bone mass and bone mechanical properties in ovariectomized (OVX) rats. Methods OVX rats were treated with ALN, OPG-Fc, or OPG-Fc and ALN. Biochemical markers, trabecular bone mass, biomechanics, histomorphometry and RANKL expression in the bone tissues were examined following the treatments. Results The treatment of ALN, OPG-Fc and ALN+OPG-Fc all prevented bone loss in the OVX-rats, there was no statistical difference among the three treatment groups in terms of vertebrae BMD, mineralizing surfaces, mineral apposition rate, BFR/BS. The ALN+OPG-Fc treatment group had significantly increased the mechanical strength of lumber vertebral bodies and femoral shafts when compared to the ALN and OPG-Fc treatment groups. The RANKL protein expression in the vertebral bones was significantly decreased in the ALN and ALN+OPG-Fc treatment groups, suggesting the combined use of OPG-Fc and ALN might have amplified inhibition of bone resorption through inhibiting RANKL-dependent osteoclastogenesis. Conclusion The combined use of OPG-Fc and ALN may be a new treatment strategy for reversing bone loss and restoring bone quality in osteoprotic disorders. PMID:21752290

Micro thermal energy harvester design optimization

NASA Astrophysics Data System (ADS)

Trioux, E.; Monfray, S.; Basrour, S.

2017-11-01

This paper reports the recent progress of a new technology to scavenge thermal energy, implying a double-step transduction through the thermal buckling of a bilayer aluminum nitride/aluminum bridge and piezoelectric transduction. A completely new scavenger design is presented, with improved performance. The butterfly shape reduces the overall device mechanical rigidity, which leads to a decrease in buckling temperatures compared to previously studied rectangular plates. Firstly, an analytical model exposes the basic principle of the presented device. Then a numerical model completes the explanations by introducing a butterfly shaped structure. Finally the fabrication process is briefly described and both the rectangular and butterfly harvesters are characterized. We compare their performances with an equal thickness of Al and AlN. Secondly, with a thicker Al layer than AlN layer, we will characterize only the butterfly structure in terms of output power and buckling temperatures, and compare it to the previous stack.

Optical characterization and thermal properties of CVD diamond films for integration with power electronics

NASA Astrophysics Data System (ADS)

Nazari, Mohammad; Hancock, B. Logan; Anderson, Jonathan; Hobart, Karl D.; Feygelson, Tatyana I.; Tadjer, Marko J.; Pate, Bradford B.; Anderson, Travis J.; Piner, Edwin L.; Holtz, Mark W.

2017-10-01

Studies of diamond material for thermal management are reported for a nominally 1-μm thick layer grown on silicon. Thickness of the diamond is measured using spectroscopic ellipsometry. Spectra are consistently modeled using a diamond layer taking into account surface roughness and requiring an interlayer of nominally silicon carbide. The presence of the interlayer is confirmed by transmission electron microscopy. Thermal conductivity is determined based on a heater which is microfabricated followed by back etching to produce a supported diamond membrane. Micro-Raman mapping of the diamond phonon is used to estimate temperature rise under known drive conditions of the resistive heater. Consistent values are obtained for thermal conductivity based on straightforward analytical calculation using phonon shift to estimate temperature and finite element simulations which take both temperature rise and thermal stress into account.

Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

PubMed

Fallahazad, Babak; Lee, Kayoung; Kang, Sangwoo; Xue, Jiamin; Larentis, Stefano; Corbet, Christopher; Kim, Kyounghwan; Movva, Hema C P; Taniguchi, Takashi; Watanabe, Kenji; Register, Leonard F; Banerjee, Sanjay K; Tutuc, Emanuel

2015-01-14

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

In Vitro and In Vivo Evaluation of Commercially Available Fibrin Gel as a Carrier of Alendronate for Bone Tissue Engineering.

PubMed

Kim, Beom Su; Shkembi, Feride; Lee, Jun

2017-01-01

Alendronate (ALN) is a bisphosphonate drug that is widely used for the treatment of osteoporosis. Furthermore, local delivery of ALN has the potential to improve the bone regeneration. This study was designed to investigate an ALN-containing fibrin (fibrin/ALN) gel and evaluate the effect of this gel on both in vitro cellular behavior using human mesenchymal stem cells (hMSCs) and in vivo bone regenerative capacity. Fibrin hydrogels were fabricated using various ALN concentrations (10 -7 -10 -4  M) with fibrin glue and the morphology, mechanical properties, and ALN release kinetics were characterized. Proliferation and osteogenic differentiation of and cytotoxicity in fibrin/ALN gel-embedded hMSCs were examined. In vivo bone formation was evaluated using a rabbit calvarial defect model. The fabricated fibrin/ALN gel was transparent with Young's modulus of ~13 kPa, and these properties were not affected by ALN concentration. The in vitro studies showed sustained release of ALN from the fibrin gel and revealed that hMSCs cultured in fibrin/ALN gel showed significantly increased proliferation and osteogenic differentiation. In addition, microcomputed tomography and histological analysis revealed that the newly formed bone was significantly enhanced by implantation of fibrin/ALN gel in a calvarial defect model. These results suggest that fibrin/ALN has the potential to improve bone regeneration.

In Vitro and In Vivo Evaluation of Commercially Available Fibrin Gel as a Carrier of Alendronate for Bone Tissue Engineering

PubMed Central

Kim, Beom Su; Shkembi, Feride

2017-01-01

Alendronate (ALN) is a bisphosphonate drug that is widely used for the treatment of osteoporosis. Furthermore, local delivery of ALN has the potential to improve the bone regeneration. This study was designed to investigate an ALN-containing fibrin (fibrin/ALN) gel and evaluate the effect of this gel on both in vitro cellular behavior using human mesenchymal stem cells (hMSCs) and in vivo bone regenerative capacity. Fibrin hydrogels were fabricated using various ALN concentrations (10−7–10−4 M) with fibrin glue and the morphology, mechanical properties, and ALN release kinetics were characterized. Proliferation and osteogenic differentiation of and cytotoxicity in fibrin/ALN gel-embedded hMSCs were examined. In vivo bone formation was evaluated using a rabbit calvarial defect model. The fabricated fibrin/ALN gel was transparent with Young's modulus of ~13 kPa, and these properties were not affected by ALN concentration. The in vitro studies showed sustained release of ALN from the fibrin gel and revealed that hMSCs cultured in fibrin/ALN gel showed significantly increased proliferation and osteogenic differentiation. In addition, microcomputed tomography and histological analysis revealed that the newly formed bone was significantly enhanced by implantation of fibrin/ALN gel in a calvarial defect model. These results suggest that fibrin/ALN has the potential to improve bone regeneration. PMID:28210623

Effects of long term treatment with high doses of odanacatib on bone mass, bone strength, and remodeling/modeling in newly ovariectomized monkeys.

PubMed

Duong, L T; Pickarski, M; Cusick, T; Chen, C M; Zhuo, Y; Scott, K; Samadfam, R; Smith, S Y; Pennypacker, B L

2016-07-01

The objectives here were to evaluate the effects of odanacatib (ODN) at doses exceeding the clinical exposure on biomechanical properties of lumbar vertebrae (LV), hip and central femur (CF), and compare ODN to alendronate (ALN) on bone remodeling/modeling in ovariectomized (OVX) monkeys. Ten days post-surgery, animals were treated with vehicle (VEH), ODN-L (2mg/kg/day, p.o.), ODN-H (8/4mg/kg/day), or ALN (30μg/kg/week, s.c.) for 20months. An intact group was also included. ODN-L provided systemic exposures of 1.8-fold of clinical exposure. ODN-H started at 20-fold for 5.5months, and then reduced to 7.8-fold of clinical exposure, compared to ALN at approximated clinical exposure. From cross sectional analyses, LV density and peak load in ODN at both doses or ALN were not different from VEH or Intact. However, cortical thickness of femoral neck (FN) and CF in ODN were higher (21-34%, p<0.05) than VEH, due to smaller endocortical (Ec) perimeter of FN (10-11%; p<0.05) and CF (9-12%; ODN-L, p<0.05), and larger CF periosteal (Ps) perimeter (2-12%; ODN-H, p<0.001) versus VEH. ODN groups also showed slightly higher cortical porosity and Ps non-lamellar bone in CF. ODN-H treatment resulted in higher CF peak load (p<0.05) versus VEH. For all bone sites analyzed, a positive, linear relationship (r(2)=0.46-0.69, p<0.0001) of peak load to density or structural parameters was demonstrated. No treatment-related differences in the derived intrinsic strength properties were evidenced as compared between groups. ALN reduced all remodeling surfaces without affecting Ps modeling. Trabecular and intracortical remodeling were reduced in ODN groups, similar to ALN. Ec mineralizing surface in ODN-H trended to be lower than VEH by month 20, but Ec bone formation indices in ODN groups generally were not different from VEH. Ps modeling in ODN groups was significantly higher than other treatment groups. This study overall demonstrated the bone safety profile of ODN and its unique mechanism on cortical bone supporting the clinical application for osteoporosis treatment. Copyright © 2016 Elsevier Inc. All rights reserved.

Designing interlayers to improve the mechanical reliability of transparent conductive oxide coatings on flexible substrates

NASA Astrophysics Data System (ADS)

Kim, Eun-Hye; Yang, Chan-Woo; Park, Jin-Woo

2012-05-01

In this study, we investigate the effect of interlayers on the mechanical properties of transparent conductive oxide (TCO) on flexible polymer substrates. Indium tin oxide (ITO), which is the most widely used TCO film, and Ti, which is the most widely used adhesive interlayer, are selected as the coating and the interlayer, respectively. These films are deposited on the polymer substrates using dc-magnetron sputtering to achieve varying thicknesses. The changes in the following critical factors for film cracking and delamination are analyzed: the internal stress (σi) induced in the coatings during deposition using a white light interferometer, the crystallinity using a transmission electron microscope, and the surface roughness of ITO caused by the interlayer using an atomic force microscope. The resistances to the cracking and delamination of ITO are evaluated using a fragmentation test. Our tests and analyses reveal the important role of the interlayers, which significantly reduce the compressive σi that is induced in the ITO and increase the resistance to the buckling delamination of the ITO. However, the relaxation of σi is not beneficial to cracking because there is less compensation for the external tension as σi further decreases. Based on these results, the microstructural control is revealed as a more influential factor than σi for improving crack resistance.

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

NASA Astrophysics Data System (ADS)

Bläsing, J.; Krost, A.; Hertkorn, J.; Scholz, F.; Kirste, L.; Chuvilin, A.; Kaiser, U.

2009-02-01

This paper presents an x-ray study of GaN, which is grown on nominally undoped and oxygen-doped AlN nucleation layers on sapphire substrates by metal organic vapor phase epitaxy. Without additional oxygen doping a trimodal nucleation distribution of AlN is observed leading to inhomogeneous in-plane strain fields, whereas in oxygen-doped layers a homogeneous distribution of nucleation centers is observed. In both types of nucleation layers extremely sharp correlation peaks occur in transverse ω-scans which are attributed to a high density of edge-type dislocations having an in-plane Burgers vector. The correlation peaks are still visible in the (0002) ω-scans of 500 nm GaN which might mislead an observer to conclude incorrectly that there exists an extremely high structural quality. For the undoped nucleation layers depth-sensitive measurements in grazing incidence geometry reveal a strong thickness dependence of the lattice parameter a, whereas no such dependence is observed for doped samples. For oxygen-doped nucleation layers, in cross-sectional transmission electron microscopy images a high density of stacking faults parallel to the substrate surface is found in contrast to undoped nucleation layers where a high density of threading dislocations is visible. GaN of 2.5 μm grown on top of 25 nm AlN nucleation layers with an additional in situ SiN mask show full widths at half maximum of 160″ and 190″ in (0002) and (10-10) high-resolution x-ray diffraction ω-scans, respectively.

Time-of-flight secondary ion mass spectrometry study on the distribution of alendronate sodium in drug-loaded ultra-high molecular weight polyethylene.

PubMed

Liu, Xiaomin; Qu, Shuxin; Lu, Xiong; Ge, Xiang; Leng, Yang

2009-12-01

The aim of this study was to investigate the drug distribution in ultra-high molecular weight polyethylene (UHMWPE) loaded with alendronate sodium (ALN), which was developed to treat particle-induced osteolysis after artificial joint replacements, since the drug distribution in UHMWPE could play a key role in controlling drug release. A mixture of UHMWPE powder and ALN was dried and hot pressed to prepare UHMWPE loaded with ALN (UHMWPE-ALN). Fourier transform infrared spectroscopy analysis demonstrated that the hot press had no effect on the functional groups of ALN in UHMWPE-ALN. X-ray diffraction indicated that there was no phase change of the UHMWPE after hot pressing. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) spectra revealed the existence of characteristic elements and functional groups from ALN in UHMWPE-ALN, such as Na+, C3H8N+, PO3(-) and PO3H(-). In addition, SIMS images suggested that ALN did not agglomerate in UHMWPE-ALN. A small punch test and hardness test were carried out and the results indicated that ALN did not affect the mechanical properties at the present content level. The present study demonstrated that it was feasible to fabricate the un-agglomerated distributed drug in UHMWPE with good mechanical properties. This ALN loaded UHMWPE would have potential application in clinics.

First-principles study on stability, and growth strategies of small AlnZr (n=1-9) clusters

NASA Astrophysics Data System (ADS)

Li, Zhi; Zhou, Zhonghao; Wang, Hongbin; Li, Shengli; Zhao, Zhen

2016-09-01

The geometries, relative stability as well as growth strategies of the AlnZr (n=1-9) clusters are investigated with spin polarized density functional theory: BLYP. The results reveal that the AlnZr clusters are more likely to form the dense accumulation structures than the AlN (N=1-10) clusters. The average binding energies of AlnZr are higher than those of AlN clusters. The AlnZr (n=3, 5, and 7) clusters are more stable than others by the differences of the total binding energies. Mülliken population analysis for the AlnZr clusters shows that the electron's adsorption ability of Zr is slightly lower than that of Al except for AlZr cluster. Local peaks of the HOMO-LUMO gap curve are found at n=3, 5, and 7. The reaction energies of AlnZr are higher, which means that AlnZr clusters are easier to react with Al clusters. Zr atom preferential reacts with Al2 cluster. Local peaks of the magnetic dipole moments are found at n=2, 5, and 8.

Enhancement of magnetoresistance with low interlayer coupling by insertion of a nano-oxide layer into a free magnetic layer

NASA Astrophysics Data System (ADS)

Nam, Chunghee; Lee, Ki-Su; Cho, B. K.

2005-05-01

We studied the interlayer coupling strength (Hin) and GMR ratio of a spin-valve with the top free layer, separated by a nano-oxide layer (NOL). With the total thickness of the top free layer being fixed at 60Å, the physical properties of the NOL spin-valve were studied with the thickness (tf) of the free layer under the inserted NOL and compared with those of the normal spin-valve with the same thickness as tf. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve at the optimal condition (tf=40Å) after thermal annealing at T =250°C. The NOL spin-valve also shows a lower Hin than that of the optimal normal spin-valve with tf=40Å, which is comparable to that of the normal spin-valve with tf=60Å. This indicates that the enhancement of GMR, while keeping the Hin to be low, can be achieved by inserting a NOL into the top free layer.

Temperature-dependent layer breathing modes in two-dimensional materials

NASA Astrophysics Data System (ADS)

Maity, Indrajit; Maiti, Prabal K.; Jain, Manish

2018-04-01

Relative out-of-plane displacements of the constituent layers of two-dimensional materials give rise to unique low-frequency breathing modes. By computing the height-height correlation functions from molecular dynamics simulations, we show that the layer breathing modes (LBMs) can be mapped consistently to vibrations of a simple linear chain model. Our calculated thickness dependence of LBM frequencies for few-layer (FL) graphene and molybdenum disulfide (MoS2) are in excellent agreement with available experiments. Our results show a redshift of LBM frequency with an increase in temperature, which is a direct consequence of anharmonicities present in the interlayer interaction. We also predict the thickness and temperature dependence of LBM frequencies for FL hexagonal boron nitride. Our Rapid Communication provides a simple and efficient way to probe the interlayer interaction for layered materials and their heterostructures with the inclusion of anharmonic effects.

Pharmacokinetics of coadministration of levothyroxine sodium and alendronate sodium new effervescent formulation.

PubMed

Bone, H G; Walter, M A; Hurley, M E; Epstein, S

2017-05-01

No clinically important pharmacokinetic interference of alendronate occurred between a new effervescent formulation of alendronate and levothyroxine when coadministered. The combination does not materially affect levothyroxine absorption. Concurrent treatment of osteoporosis with alendronate (Aln) and hypothyroidism with levothyroxine (LT4) may be problematic because both drugs are to be taken separately after fasting overnight. The primary objective was to assess pharmacokinetic interactions between a new effervescent formulation of Aln (Aln-NEF) and LT4. A randomized, open-label, 3-way crossover study was conducted in 30 healthy adults (15 women). Subjects were dosed 3 times, separated by 35 days, after overnight fasts, with Aln-NEF alone (70 mg), LT4 alone (600 μg), or Aln-NEF and LT4 concurrently. Samples were analyzed for plasma Aln and serum LT4. Pharmacokinetic drug-drug interaction was assessed using 90% confidence intervals (CIs) for the test/reference ratio of the geometric means for area under the concentration-time curve from time zero to last measureable time point (AUC 0-t ) and maximum concentration (C max ). Results were compared to the default no-effect boundaries of 80 to 125% for the ratio Aln-NEF and LT4 concurrently/Aln-NEF alone and the ratio Aln-NEF and LT4 concurrently/LT4 alone. Geometric mean ratios (Aln-NEF with LT4/Aln-NEF alone) were 0.927 (90% CI 0.795-1.081) for AUC 0-8 and 0.912 (90% CI 0.773-1.077) for C max , demonstrating LT4 does not appreciably affect the pharmacokinetics of Aln. Geometric mean ratios (LT4 with Aln-NEF/LT4 alone) were 1.049 (90% CI 0.983-1.119) for AUC 0-48 and 1.075 (90% CI 1.006-1.148) for C max , demonstrating LT4 is bioequivalent between the 2 treatments. Coadministration of Aln-NEF and LT4 was well tolerated. There was no clinically important pharmacokinetic interference between the Aln-NEF formulation and LT4. Aln-NEF does not materially affect LT4 absorption.

Proton-conducting Micro-solid Oxide Fuel Cells with Improved Cathode Reactions by a Nanoscale Thin Film Gadolinium-doped Ceria Interlayer

PubMed Central

Li, Yong; Wang, Shijie; Su, Pei-Chen

2016-01-01

An 8 nm-thick gadolinium-doped ceria (GDC) layer was inserted as a cathodic interlayer between the nanoscale proton-conducting yttrium-doped barium zirconate (BZY) electrolyte and the porous platinum cathode of a micro-solid oxide fuel cell (μ-SOFC), which has effectively improved the cathode reaction kinetics and rendered high cell power density. The addition of the GDC interlayer significantly reduced the cathodic activation loss and increased the peak power density of the μ-SOFC by 33% at 400 °C. The peak power density reached 445 mW/cm2 at 425 °C, which is the highest among the reported μ-SOFCs using proton-conducting electrolytes. The impressive performance was attributed to the mixed protonic and oxygen ionic conducting properties of the nano-granular GDC, and also to the high densities of grain boundaries and lattice defects in GDC interlayer that favored the oxygen incorporation and transportation during the oxygen reduction reaction (ORR) and the water evolution reaction at cathode. PMID:26928192

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manna, P. K.; Skoropata, E.; Ting, Y-W

Exchange bias and interlayer exchange coupling are interface driven phenomena. Since an ideal interface is very challenging to achieve, a clear understanding of the chemical and magnetic natures of interfaces is pivotal to identify their influence on the magnetism. We have chosen Ni 80Fe 20/CoO(t CoO)/Co trilayers as a model system, and identified non-stoichiometric Ni-ferrite and Co-ferrite at the surface and interface, respectively. These ferrites, being ferrimagnets typically, should influence the exchange coupling. But, in our trilayers the interface ferrites were found not to be ferro-or ferri-magnetic; thus having no observable influence on the exchange coupling. Our analysis also revealedmore » that (i) interlayer exchange coupling was present between Ni 80Fe 20 and Co even though the interlayer thickness was significantly larger than expected for this phenomenon to happen, and (ii) the majority of the CoO layer (except some portion near the interface) did not contribute to the observed exchange bias. Here, we also identified that the interlayer exchange coupling and the exchange bias properties were not interdependent.« less

Interface mixing and its impact on exchange coupling in exchange biased systems

DOE PAGES

Manna, P. K.; Skoropata, E.; Ting, Y-W; ...

2016-10-05

Exchange bias and interlayer exchange coupling are interface driven phenomena. Since an ideal interface is very challenging to achieve, a clear understanding of the chemical and magnetic natures of interfaces is pivotal to identify their influence on the magnetism. We have chosen Ni 80Fe 20/CoO(t CoO)/Co trilayers as a model system, and identified non-stoichiometric Ni-ferrite and Co-ferrite at the surface and interface, respectively. These ferrites, being ferrimagnets typically, should influence the exchange coupling. But, in our trilayers the interface ferrites were found not to be ferro-or ferri-magnetic; thus having no observable influence on the exchange coupling. Our analysis also revealedmore » that (i) interlayer exchange coupling was present between Ni 80Fe 20 and Co even though the interlayer thickness was significantly larger than expected for this phenomenon to happen, and (ii) the majority of the CoO layer (except some portion near the interface) did not contribute to the observed exchange bias. Here, we also identified that the interlayer exchange coupling and the exchange bias properties were not interdependent.« less

Low Temperature Unbalanced Magnetron Deposition of Hard, Wear-Resistant Coatings for Liquid-Film Bearing Applications

NASA Technical Reports Server (NTRS)

Sproul, William D.

1996-01-01

The original program for evaluating the tribological properties several different hard coatings for liquid film bearing applications was curtailed when the time for the program was reduced from 3 years to 1. Of the several different coatings originally planned for evaluation, we decided to concentrate on one coating, carbon nitride. At BIRL, we have been instrumental in the development of reactively sputtered carbon nitride coatings, and we have found that it is a very interesting new material with very good tribological properties. In this program, we found that the reactively sputtered carbon nitride does not bond well directly to hardened 440C stainless steel; but if an interlayer of titanium nitride is added between the carbon nitride and the 440C, the adhesion of the dual coating combination is very good. Statistically designed experiments were run with the dual layer combination, and 3 variables were chosen for the Box-Benken design, which were the titanium nitride interlayer thickness, the nitrogen partial pressure during the reactive sputtering of the carbon nitride, and the carbon nitride substrate bias voltage. Two responses were studied from these three variables; the adhesion of the dual coating combination to the 440C substrate and the friction coefficient of the carbon nitride in dry sliding contact with 52100 steel in air. The best adhesion came with the thickness interlayer thickness studied, which was 4 micrometers, and the lowest coefficient of friction was 0.1, which was achieved when the bias voltage was in the range of -80 to - 120 V and the nitrogen partial pressure was 3 mTorr.

Alendronate promotes bone formation by inhibiting protein prenylation in osteoblasts in rat tooth replantation model.

PubMed

Komatsu, Koichiro; Shimada, Akemi; Shibata, Tatsuya; Wada, Satoshi; Ideno, Hisashi; Nakashima, Kazuhisa; Amizuka, Norio; Noda, Masaki; Nifuji, Akira

2013-11-01

Bisphosphonates (BPs) are a major class of antiresorptive drug, and their molecular mechanisms of antiresorptive action have been extensively studied. Recent studies have suggested that BPs target bone-forming cells as well as bone-resorbing cells. We previously demonstrated that local application of a nitrogen-containing BP (N-BP), alendronate (ALN), for a short period of time increased bone tissue in a rat tooth replantation model. Here, we investigated cellular mechanisms of bone formation by ALN. Bone histomorphometry confirmed that bone formation was increased by local application of ALN. ALN increased proliferation of bone-forming cells residing on the bone surface, whereas it suppressed the number of tartrate-resistant acid phosphatase (TRAP)-positive osteoclasts in vivo. Moreover, ALN treatment induced more alkaline phosphatase-positive and osteocalcin-positive cells on the bone surface than PBS treatment. In vitro studies revealed that pulse treatment with ALN promoted osteocalcin expression. To track the target cells of N-BPs, we applied fluorescence-labeled ALN (F-ALN) in vivo and in vitro. F-ALN was taken into bone-forming cells both in vivo and in vitro. This intracellular uptake was inhibited by endocytosis inhibitors. Furthermore, the endocytosis inhibitor dansylcadaverine (DC) suppressed ALN-stimulated osteoblastic differentiation in vitro and it suppressed the increase in alkaline phosphatase-positive bone-forming cells and subsequent bone formation in vivo. DC also blocked the inhibition of Rap1A prenylation by ALN in the osteoblastic cells. These data suggest that local application of ALN promotes bone formation by stimulating proliferation and differentiation of bone-forming cells as well as inhibiting osteoclast function. These effects may occur through endocytic incorporation of ALN and subsequent inhibition of protein prenylation.

Magnetoresistance enhancement in Gd- Y bilayers

NASA Astrophysics Data System (ADS)

Freitas, P. P.; From, M.; Melo, L. V.; Plaskett, T. S.

1991-02-01

Gd-Y-Gd bilayers were prepared that show a magnetoresistance enhancement when the non-magnetic Y layer separations is 11 or 32 Å. This oscillatory behavior of the magnetoresistance versus Y thickness is tentatively related to oscillations in the interlayer coupling.

Experiments using a 200 kV implanter and a 5 MV tandem accelerator

NASA Astrophysics Data System (ADS)

Ishigami, Ryoya; Ito, Yoshifumi; Yasuda, Keisuke; Hatori, Satoshi

2001-07-01

N+ ions with an energy of 190 keV were implanted into an Al alloy (95% Al and 5% Mg) to a dose of 1.5×1019ions/cm2. A layer of AlN with 1.4 μm thickness was obtained. The amounts of InN deposited on GaAs or Al2O3 were measured by RBS using He2+ ions with an energy of 3.14 MeV generated by a tandem accelerator. The thickness was estimated to be 0.047 μm and 0.26 μm in each case. An experiment on transmission ERDA using He2+ ions with an energy of 15 MeV is proposed for the measurement of deuterons in thick Ti foil with good depth resolution.

Characterization of the mechanical and thermal interface of copper films on carbon substrates modified by boron based interlayers

PubMed Central

Schäfer, D.; Eisenmenger-Sittner, C.; Chirtoc, Mihai; Kijamnajsuk, P.; Kornfeind, N.; Hutter, H.; Neubauer, E.; Kitzmantel, M.

2011-01-01

The manipulation of mechanical and thermal interfaces is essential for the design of modern composites. Amongst these are copper carbon composites which can exhibit excellent heat conductivities if the Cu/C interface is affected by a suitable interlayer to minimize the Thermal Contact Resistance (TCR) and to maximize the adhesion strength between Cu and C. In this paper we report on the effect of boron based interlayers on wetting, mechanical adhesion and on the TCR of Cu coatings deposited on glassy carbon substrates by magnetron sputtering. The interlayers were 5 nm thick and consisted of pure B and B with additions of the carbide forming metals Mo, Ti and Cr in the range of 5 at.% relative to B. The interlayers were deposited by RF magnetron sputtering from either a pure B target or from a composite target. The interlayer composition was checked by Auger Electron Spectroscopy and found to be homogenous within the whole film. The system C-substrate/interlayer/Cu coating was characterized in as deposited samples and samples heat treated for 30 min at 800 °C under High Vacuum (HV), which mimics typical hot pressing parameters during composite formation. Material transport during heat treatment was investigated by Secondary Ion Mass Spectroscopy (SIMS). The de-wetting and hole formation in the Cu coating upon heat treatment were studied by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The adhesion of the Cu coating was evaluated by mechanical pull-off testing. The TCR was assessed by infrared photothermal radiometry (PTR). A correlation between the adhesion strength and the value of the TCR which was measured by PTR was determined for as deposited as well as for heat treated samples. PMID:22241938

Infrared photocurrent management in monolithic perovskite/silicon heterojunction tandem solar cells by using a nanocrystalline silicon oxide interlayer.

PubMed

Mazzarella, Luana; Werth, Matteo; Jäger, Klaus; Jošt, Marko; Korte, Lars; Albrecht, Steve; Schlatmann, Rutger; Stannowski, Bernd

2018-05-14

We performed optical simulations using hydrogenated nanocrystalline silicon oxide (nc-SiO x :H) as n-doped interlayer in monolithic perovskite/c-Si heterojunction tandem solar cells. Depending on the adjustable value of its refractive index (2.0 - 2.7) and thickness, nc-SiO x :H allows to optically manage the infrared light absorption in the c-Si bottom cell minimizing reflection losses. We give guidelines for nc-SiO x :H optimization in tandem devices in combination with a systematic investigation of the effect of the surface morphology (flat or textured) on the photocurrent density. For full-flat and rear textured devices, we found matched photocurrents higher than 19 and 20 mA/cm 2 , respectively, using a 90 nm nc-SiO x :H interlayer with a refractive index of 2.7.

Joining of Silicon Carbide: Diffusion Bond Optimization and Characterization

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay

2008-01-01

Joining and integration methods are critically needed as enabling technologies for the full utilization of advanced ceramic components in aerospace and aeronautics applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. In the application, several SiC substrates with different hole patterns to form fuel and combustion air channels are bonded to form the injector. Diffusion bonding is a joining approach that offers uniform bonds with high temperature capability, chemical stability, and high strength. Diffusion bonding was investigated with the aid of titanium foils and coatings as the interlayer between SiC substrates to aid bonding. The influence of such variables as interlayer type, interlayer thickness, substrate finish, and processing time were investigated. Optical microscopy, scanning electron microscopy, and electron microprobe analysis were used to characterize the bonds and to identify the reaction formed phases.

Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ling, Xi; Liang, Liangbo; Huang, Shengxi

2015-05-08

As a new two-dimensional layered material, black phosphorus (BP) is a very promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to characterize and understand low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. Using laser polarization dependence study and group theory analysis the breathing modes are assigned to Ag symmetry. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are considerably more sensitive to interlayer coupling and thus their frequencies show stronger dependence on the number of layers. Hence, they constitute an effective means to probe both themore » crystalline orientation and thickness of few-layer BP. Furthermore, the temperature dependence shows that the breathing modes have a harmonic behavior, in contrast to HF Raman modes which exhibit anharmonicity.« less

Mechanical properties of atomically thin boron nitride and the role of interlayer interactions

PubMed Central

Falin, Aleksey; Cai, Qiran; Santos, Elton J. G.; Scullion, Declan; Qian, Dong; Zhang, Rui; Yang, Zhi; Huang, Shaoming; Watanabe, Kenji; Taniguchi, Takashi; Barnett, Matthew R.; Chen, Ying; Ruoff, Rodney S.; Li, Lu Hua

2017-01-01

Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but investigation into their mechanical properties remains incomplete. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer BN shows mechanical behaviours quite different from those of few-layer graphene under indentation. In striking contrast to graphene, whose strength decreases by more than 30% when the number of layers increases from 1 to 8, the mechanical strength of BN nanosheets is not sensitive to increasing thickness. We attribute this difference to the distinct interlayer interactions and hence sliding tendencies in these two materials under indentation. The significantly better interlayer integrity of BN nanosheets makes them a more attractive candidate than graphene for several applications, for example, as mechanical reinforcements. PMID:28639613

Optimization of chemical vapor deposition diamond films growth on steel: correlation between mechanical properties, structure, and composition.

PubMed

Laikhtman, A; Rapoport, L; Perfilyev, V; Moshkovich, A; Akhvlediani, R; Hoffman, A

2011-09-01

In the present work we perform optimization of mechanical and crystalline properties of CVD microcrystalline diamond films grown on steel substrates. A chromium-nitride (Cr-N) interlayer had been previously proposed to serve as a buffer for carbon and iron inter-diffusion and as a matching layer for the widely differing expansion coefficients of diamond and steel. However, adhesion and wear as well as crystalline perfection of diamond films are strongly affected by conditions of both Cr-N interlayer preparation and CVD diamond deposition. In this work we assess the effects of two parameters. The first one is the temperature of the Cr-N interlayer preparation: temperatures in the range of 500 degrees C-800 degrees C were used. The second one is diamond film thickness in the 0.5 microm-2 microm range monitored through variation of the deposition time from approximately 30 min to 2 hours. The mechanical properties of so deposited diamond films were investigated. For this purpose, scratch tests were performed at different indentation loads. The friction coefficient and wear loss were assessed. The mechanical and tribological properties were related to structure, composition, and crystalline perfection of diamond films which were extensively analyzed using different microscopic and spectroscopic techniques. It was found that relatively thick diamond film deposited on the Cr-N interlayer prepared at the temperature similar to that of the CVD process has the best mechanical and adhesion strength. This film was stable without visible cracks around the wear track during all scratch tests with different indentation loads. In other cases, cracking and delamination of the films took place at low to moderate indentation loads.

Effect of post-implantation annealing on Al-N isoelectronic trap formation in silicon: Al-N pair formation and defect recovery mechanisms

NASA Astrophysics Data System (ADS)

Mori, Takahiro; Morita, Yukinori; Matsukawa, Takashi

2018-05-01

The effect of post-implantation annealing (PIA) on Al-N isoelectronic trap (IET) formation in silicon has been experimentally investigated to discuss the Al-N IET formation and implantation-induced defect recovery mechanisms. We performed a photoluminescence study, which indicated that self-interstitial clusters and accompanying vacancies are generated in the ion implantation process. It is supposed that Al and N atoms move to the vacancy sites and form stable Al-N pairs in the PIA process. Furthermore, the PIA process recovers self-interstitial clusters while transforming their atomic configuration. The critical temperature for the formation/dissociation of Al-N pairs was found to be 450 °C, with which we describe the process integration for devices utilizing Al-N IET technology.

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia

2015-03-15

Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width atmore » half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.« less

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin

2014-06-01

We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates (NPSS) using metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth on NPSS, 4-μm AlN buffer layer has shown strain relaxation and a coalescence thickness of only 2.5 μm. The full widths at half-maximum of X-ray diffraction (002) and (102) ω-scan rocking curves of AlN on NPSS are only 69.4 and 319.1 arcsec. The threading dislocation density in AlGaN-based multi-quantum wells, which are grown on this AlN/NPSS template with a light-emitting wavelength at 283 nm at room temperature, is reduced by 33% compared with that on flat sapphire substrate indicated by atomic force microscopy measurements, and the internal quantum efficiency increases from 30% to 43% revealed by temperature-dependent photoluminescent measurement.

Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

NASA Astrophysics Data System (ADS)

Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Yamaguchi, Hideshi; Nakamura, Norikazu

2017-03-01

This paper investigates the gate leakage characteristics of in-situ AlN capped InAlN/AlN/GaN heterostructures grown by metal-organic vapor phase epitaxy. It was revealed that the leakage characteristics of AlN capped InAlN/AlN/GaN heterostructures are strongly dependent on the growth temperature of the AlN cap. For an AlN capped structure with an AlN growth temperature of 740 °C, the leakage current even increased although there exists a large bandgap material on InAlN/AlN/GaN heterostructures. On the other hand, a large reduction of the gate leakage current by 4-5 orders of magnitudes was achieved with a very low AlN growth temperature of 430 °C. X-ray diffraction analysis of the AlN cap grown at 740 °C indicated that the AlN layer is tensile-strained. In contrast to this result, the amorphous structure was confirmed for the AlN cap grown at 430 °C by transmission electron microscopy. Furthermore, theoretical analysis based on one-dimensional band simulation was carried out, and the large increase in two-dimensional electron gas (2DEG) observed in Hall measurements was well reproduced by taking into account the spontaneous and piezo-electric polarization in the AlN layer grown at 740 °C. For the AlN capped structure grown at 430 °C, it is believed that the reduced polarization field in the AlN cap suppressed the penetration of 2DEG into the InAlN barrier layer, resulting in a small impact on 2DEG mobility and density. We believe that an in-situ grown AlN cap with a very low growth temperature of 430 °C is a promising candidate for high-frequency/high-power GaN-based devices with low gate leakage current.

3D printed alendronate-releasing poly(caprolactone) porous scaffolds enhance osteogenic differentiation and bone formation in rat tibial defects.

PubMed

Kim, Sung Eun; Yun, Young-Pil; Shim, Kyu-Sik; Kim, Hak-Jun; Park, Kyeongsoon; Song, Hae-Ryong

2016-09-29

The aim of this study was to evaluate the in vitro osteogenic effects and in vivo new bone formation of three-dimensional (3D) printed alendronate (Aln)-releasing poly(caprolactone) (PCL) (Aln/PCL) scaffolds in rat tibial defect models. 3D printed Aln/PCL scaffolds were fabricated via layer-by-layer deposition. The fabricated Aln/PCL scaffolds had high porosity and an interconnected pore structure and showed sustained Aln release. In vitro studies showed that MG-63 cells seeded on the Aln/PCL scaffolds displayed increased alkaline phosphatase (ALP) activity and calcium content in a dose-dependent manner when compared with cell cultures in PCL scaffolds. In addition, in vivo animal studies and histologic evaluation showed that Aln/PCL scaffolds implanted in a rat tibial defect model markedly increased new bone formation and mineralized bone tissues in a dose-dependent manner compared to PCL-only scaffolds. Our results show that 3D printed Aln/PCL scaffolds are promising templates for bone tissue engineering applications.

DFT study on the adsorption behavior and electronic response of AlN nanotube and nanocage toward toxic halothane gas

NASA Astrophysics Data System (ADS)

Mohammadi, R.; Hosseinian, A.; Khosroshahi, E. Saedi; Edjlali, L.; Vessally, E.

2018-04-01

We have investigated the adsorption of a halothane molecule on the AlN nanotube, and nanocage using density functional theory calculations. We predicted that the halothane molecule tends to be physically adsorbed on the surface of AlN nanotube with adsorption energy (Ead) of -4.2 kcal/mol. The electronic properties of AlN nanotube are not affected by the halothane, and it is not a sensor. But the AlN nanocage is more reactive than the AlN nanotube because of its higher curvature. The halothane tends to be adsorbed on a hexagonal ring, an Alsbnd N bond, and a tetragonal ring of the AlN nanocage. The adsorption ability order is as follows: tetragonal ring (Ead = -14.7 kcal/mol) > Alsbnd N bond (Ead = -12.3 kcal/mol) > hexagonal ring (Ead = -10.1 kcal/mol). When a halothane molecule is adsorbed on the AlN nanocage, its electrical conductivity is increased, demonstrating that it can yield an electronic signal at the presence of this molecule, and can be employed in chemical sensors. The AlN nanocage benefits from a short recovery time of about 58 ms at room temperature.

Organic Light-Emitting Diodes with a Perylene Interlayer Between the Electrode-Organic Interface

NASA Astrophysics Data System (ADS)

Saikia, Dhrubajyoti; Sarma, Ranjit

2018-01-01

The performance of an organic light-emitting diode (OLED) with a vacuum-deposited perylene layer over a fluorine-doped tin oxide (FTO) surface is reported. To investigate the effect of the perylene layer on OLED performance, different thicknesses of perylene are deposited on the FTO surface and their current density-voltages (J-V), luminance-voltages (L-V) and device efficiency characteristics at their respective thickness are studied. Further analysis is carried out with an UV-visible light double-beam spectrophotometer unit, a four-probe resistivity unit and a field emission scanning electron microscope set up to study the optical transmittance, sheet resistance and surface morphology of the bilayer anode film. We used N,N'-bis(3-methyl phenyl)- N,N'(phenyl)-benzidine (TPD) as the hole transport layer, Tris(8-hydroxyquinolinato)aluminum (Alq3) as a light-emitting layer and lithium fluoride as an electron injection layer. The luminance efficiency of an OLED structure with a 9-nm-thick perylene interlayer is increased by 2.08 times that of the single-layer FTO anode OLED. The maximum value of current efficiency is found to be 5.25 cd/A.

Magnetotransport properties of spin-valve structures with Mg spacer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Boubeta, C., E-mail: cboubeta@gmail.com; Ferrante, Y.; Graduate School of Excellence, Materials Science in Mainz, 55128 Mainz

2015-01-19

A theoretical prediction by Wang et al. [Phys. Rev. B 82, 054405 (2010)] suggests the preferential transmission of majority-spin states with Δ{sub 1} symmetry across a magnesium interlayer in Fe/Mg/MgO/Fe based magnetic tunnel junctions. Here, we report experiments to probe this question in CoFe/Mg/CoFe structures. We find that the strength of the interlayer coupling decays exponentially with increasing the spacer thickness, however, a non-monotonic variation of the magnetoresistance as a function of the Mg layer is observed. These data may help revisit the role of the insertion of a Mg interface layer in MgO-based devices.

Interlayer Crosstalk Reduction by Controlling Backward Reflectivity in Multilayer Optical Discs

NASA Astrophysics Data System (ADS)

Ushiyama, Junko; Miyauchi, Yasushi; Shintani, Toshimichi; Sugiyama, Toshinori; Miyamoto, Harukazu; Kurokawa, Takahiro

2008-05-01

A method is proposed to reduce interlayer crosstalk in multilayer optical discs by controlling backward reflectivity of information layers, which can lead to wider tolerances of disc fabrication accuracy. Reduction of the backward reflectivity reduces the signal from the ghost spot even if thicknesses of spacer layers are equal. Experimental results showed that the ratio of the signals obtained by the readout spot and the ghost spot is less by about one order for a disc with controlled backward reflectivity than for a conventional disc. A rough estimate of the crosstalk caused by the ghost spot agrees qualitatively with the experimental results.

A fully spray-coated fuel cell membrane electrode assembly using Aquivion ionomer with a graphene oxide/cerium oxide interlayer

NASA Astrophysics Data System (ADS)

Breitwieser, Matthias; Bayer, Thomas; Büchler, Andreas; Zengerle, Roland; Lyth, Stephen M.; Thiele, Simon

2017-05-01

A novel multilayer membrane electrode assembly (MEA) for polymer electrolyte membrane fuel cells (PEMFCs) is fabricated in this work, within a single spray-coating device. For the first time, direct membrane deposition is used to fabricate a PEMFC by spraying the short-side-chain ionomer Aquivion directly onto the gas diffusion electrodes. The fully sprayed MEA, with an Aquivion membrane 10 μm in thickness, achieved a high power density of 1.6 W/cm2 for H2/air operation at 300 kPaabs. This is one of the highest reported values for thin composite membranes operated in H2/air atmosphere. By the means of confocal laser scanning microscopy, individual carbon fibers from the gas diffusion layer are identified to penetrate through the micro porous layer (MPL), likely causing a low electrical cell resistance in the range of 150 Ω cm2 through the thin sprayed membranes. By spraying a 200 nm graphene oxide/cerium oxide (GO/CeO2) interlayer between two layers of Aquivion ionomer, the impact of the electrical short is eliminated and the hydrogen crossover current density is reduced to about 1 mA/cm2. The peak power density of the interlayer-containing MEA drops only by 10% compared to a pure Aquivion membrane of similar thickness.

Diffusion bonding between W and EUROFER97 using V interlayer

NASA Astrophysics Data System (ADS)

Basuki, Widodo Widjaja; Aktaa, Jarir

2012-10-01

Diffusion bonding is selected to join W to EUROFER97 for the manufacturing of some components in the fusion technology. A direct bonding does not seem feasible due to the high interfacial residual stress induced by the large mismatch of the coefficient of thermal expansions of both materials to be bonded. To reduce the residual stress, a V plate with a thickness of 1 mm was introduced as an interlayer. The diffusion bonding was conducted at 1050 °C for 1 h. The uniaxial applied compression stress was calculated considering the 5% allowable creep deformation on the EUROFER97's side. Investigations on bonded specimens showed defect free interfaces. Microstructure alterations were detected just at the EUROFER97/V interface. A very hard layer assumed to be a σ phase with a thickness of about 4 μm was found on the EUROFER97's side along the bond interface. A 6 μm carbide layer containing V2C with also a high hardness value was identified on the V interlayer's side. The impact toughness of the bonded specimens was low, however comparable to that of tungsten especially if the specimens were tested at RT. Tensile test at 550 °C showed a relatively high tensile strength of bonded specimens, which achieved about 50% of the tensile strength of EUROFER97.

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsipas, P.; Kassavetis, S.; Tsoutsou, D.

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

NASA Astrophysics Data System (ADS)

Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

2016-05-01

Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4-1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

Study of perpendicular anisotropy L1{sub 0}-FePt pseudo spin valves using a micromagnetic trilayer model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Pin, E-mail: hopin@mit.edu; Data Storage Institute, Agency of Science, Technology and Research - A*STAR, 117608 Singapore; Evans, Richard F. L.

2015-06-07

A trilayer micromagnetic model based on the Landau-Lifshitz-Bloch equation of motion is utilized to study the properties of L1{sub 0}-FePt/TiN/L1{sub 0}-FePt pseudo spin valves (PSVs) in direct comparison with experiment. Theoretical studies give an insight on the crystallographic texture, magnetic properties, reversal behavior, interlayer coupling effects, and magneto-transport properties of the PSVs, in particular, with varying thickness of the top L1{sub 0}-FePt and TiN spacer. We show that morphological changes in the FePt layers, induced by varying the FePt layer thickness, lead to different hysteresis behaviors of the samples, caused by changes in the interlayer and intralayer exchange couplings. Suchmore » effects are important for the optimization of the PSVs due to the relationship between the magnetic properties, domain structures, and the magnetoresistance of the device.« less

One-dimensional nanowires of pseudoboehmite (aluminum oxyhydroxide γ-AlOOH)

PubMed Central

Iijima, Sumio; Yumura, Takashi; Liu, Zheng

2016-01-01

We report the discovery of a 1D crystalline structure of aluminum oxyhydroxide. It was found in a commercial product of fibrous pseudoboehmite (PB), γ-AlOOH, synthesized easily with low cost. The thinnest fiber found was a ribbon-like structure of only two layers of an Al–O octahedral double sheet having a submicrometer length along its c axis and 0.68-nm thickness along its b axis. This thickness is only slightly larger than half of the lattice parameter of the b-axis unit cell of the boehmite crystal (b/2 = 0.61 nm). Moreover, interlayer splittings having an average width of 1 nm inside the fibrous PB are found. These wider interlayer spaces may have intercalation of water, which is suggested by density functional theory (DFT) calculation. The fibers appear to grow as almost isolated individual filaments in aqueous Al-hydroxide sols and the growth direction of fibrous PB is always along its c axis. PMID:27708158

Ultrasound-Guided Fine-Needle Aspiration of Non-palpable and Suspicious Axillary Lymph Nodes with Subsequent Removal after Tattooing: False-Negative Results and Concordance with Sentinel Lymph Nodes.

PubMed

Kim, Won Hwa; Kim, Hye Jung; Jung, Jin Hyang; Park, Ho Yong; Lee, Jeeyeon; Kim, Wan Wook; Park, Ji Young; Cheon, Hyejin; Lee, So Mi; Cho, Seung Hyun; Shin, Kyung Min; Kim, Gab Chul

2017-11-01

Ultrasonography-guided fine-needle aspiration (US-guided FNA) for axillary lymph nodes (ALNs) is currently used with various techniques for the initial staging of breast cancer and tagging of ALNs. With the implementation of the tattooing of biopsied ALNs, the rate of false-negative results of US-guided FNA for non-palpable and suspicious ALNs and concordance with sentinel lymph nodes were determined by node-to node analyses. A total of 61 patients with breast cancer had negative results for metastasis on US-guided FNA of their non-palpable and suspicious ALNs. The biopsied ALNs were tattooed with an injection of 1-3 mL Charcotrace (Phebra, Lane Cove West, Australia) ink and removed during sentinel lymph node biopsy or axillary dissection. We determined the rate of false-negative results and concordance with the sentinel lymph nodes by a retrospective review of surgical and pathologic findings. The association of false-negative results with clinical and imaging factors was evaluated using logistic regression. Of the 61 ALNs with negative results for US-guided FNA, 13 (21%) had metastases on final pathology. In 56 of 61 ALNs (92%), tattooed ALNs corresponded to the sentinel lymph nodes. Among the 5 patients (8%) without correspondence, 1 patient (2%) had 2 metastatic ALNs of 1 tattooed node and 1 sentinel lymph node. In multivariate analysis, atypical cells on FNA results (odds ratio = 20.7, p = 0.040) was independently associated with false-negative FNA results. False-negative ALNs after US-guided FNA occur at a rate of 21% and most of the tattooed ALNs showed concordance with sentinel lymph nodes. Copyright © 2017 World Federation for Ultrasound in Medicine & Biology. Published by Elsevier Inc. All rights reserved.

Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer by scanning nonlinear dielectric microscopy

NASA Astrophysics Data System (ADS)

Odagawa, Hiroyuki; Terada, Koshiro; Tanaka, Yohei; Nishikawa, Hiroaki; Yanagitani, Takahiko; Cho, Yasuo

2017-10-01

A quantitative measurement method for a polarity-inverted layer in ferroelectric or piezoelectric thin film is proposed. It is performed nondestructively by scanning nonlinear dielectric microscopy (SNDM). In SNDM, linear and nonlinear dielectric constants are measured using a probe that converts the variation of capacitance related to these constants into the variation of electrical oscillation frequency. In this paper, we describe a principle for determining the layer thickness and some calculation results of the output signal, which are related to the radius of the probe tip and the thickness of the inverted layer. Moreover, we derive an equation that represents the relationship between the output signal and the oscillation frequency of the probe and explain how to determine the thickness from the measured frequency. Experimental results in Sc-doped AlN piezoelectric thin films that have a polarity-inverted layer with a thickness of 1.5 µm fabricated by radio frequency magnetron sputtering showed a fairly good value of 1.38 µm for the thickness of the polarity-inverted layer.

Effect of quantum-well thickness on the optical polarization of AlGaN-based ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Zhang, Jing

2018-02-01

Optical polarization from AlGaN quantum well (QW) is crucial for realizing high-efficiency deep-ultraviolet (UV) light-emitting diodes (LEDs) because it determines the light emission patterns and light extraction mechanism of the devices. As the Al-content of AlGaN QW increases, the valence bands order changes and consequently the light polarization switches from transverse-electric (TE) to transverse-magnetic (TM) owing to the different sign and the value of the crystal field splitting energy between AlN (-169meV) and GaN (10meV). Several groups have reported that the ordering of the bands and the TE/TM crossover Al-content could be influenced by the strain state and the quantum confinement from the AlGaN QW system. In this work, we investigate the influence of QW thickness on the optical polarization switching point from AlGaN QW with AlN barriers by using 6-band k•p model. The result presents a decreasing trend of the critical Al-content where the topmost valence band switches from heave hole (HH) to crystal field spilt-off (CH) with increasing QW thicknesses due to the internal electric field and the strain state from the AlGaN QW. Instead, the TE- and TM-polarized spontaneous emission rates switching Al-content rises first and falls later because of joint consequence of the band mixing effect and the Quantum Confined Stark Effect. The reported optical polarization from AlGaN QW emitters in the UV spectral range is assessed in this work and the tendency of the polarization switching point shows great consistency with the theoretical results, which deepens the understanding of the physics from AlGaN QW UV LEDs.

Effects of vitamin K2 (menatetrenone) and alendronate on bone mineral density and bone strength in rats fed a low-magnesium diet.

PubMed

Kobayashi, M; Hara, K; Akiyama, Y

2004-11-01

In this study, we examined changes in bone parameters and bone strength in rats fed low-Mg diets (experiment 1) and the effects of vitamin K2 (MK-4, experiment 3) and alendronate (ALN, experiment 2) in this model. In experiment 1, 5-week-old male Wistar rats were fed three low-Mg diets (Mg 9, 6, 3 mg/100 g diet) for 4 weeks. Although the cortical bone mineral content (CtBMC) and cortical thickness (CtTh) of the femoral diaphysis in all low-Mg-diet groups were the same as or greater than those in the intact group (Mg: 90 mg/100 g diet), the maximum load and elastic modulus were significantly reduced in the 3-mg-Mg group. In experiment 2, 4-week-old Wistar rats were fed a 6-mg-Mg diet for 8 weeks, and the effect of ALN (2, 20, and 200 microg/kg twice a week) was evaluated. The administration of ALN at 200 microg/kg increased the cortical bone mineral content (CtBMC), CtTh, and maximum load, but had no effect on the elastic modulus, as compared with the low-Mg-control group. In experiment 3, the effect of MK-4 was evaluated under the same conditions as in experiment 2. The administration of MK-4 had no effect on CtBMC, CtTh, or bone components of the femoral diaphysis. However, MK-4 inhibited the decreases in maximum load and elastic modulus due to the low-Mg diet. Since there is no other experimental model in which there is a decrease in bone mechanical properties without a decrease in bone mineral content, the low-Mg diet model is considered to be an excellent model for examining bone quality. Our results from this model suggest that MK-4 and ALN affect bone mechanical properties by different mechanisms.

Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth

NASA Astrophysics Data System (ADS)

Mayboroda, I. O.; Knizhnik, A. A.; Grishchenko, Yu. V.; Ezubchenko, I. S.; Zanaveskin, Maxim L.; Kondratev, O. A.; Presniakov, M. Yu.; Potapkin, B. V.; Ilyin, V. A.

2017-09-01

The growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally observed at up to 98% desorption of the impinging gallium. We found that under the conditions of significant thermal desorption, larger amounts of gallium were retained at lateral boundaries of 3D surface features than at flat terraces because of the higher binding energy of Ga atoms at specific surface defects. The selective accumulation of gallium resulted in an increase in the lateral growth component through the formation of the Ga-enriched AlGaN phase at boundaries of 3D surface features. We studied the temperature dependence of AlGaN growth rate and developed a kinetic model analytically describing this dependence. As the model was in good agreement with the experimental data, we used it to estimate the increase in the binding energy of Ga atoms at surface defects compared to terrace surface sites using data on the Ga content in different AlGaN phases. We also applied first-principles calculations to the thermodynamic analysis of stable configurations on the AlN surface and then used these surface configurations to compare the binding energy of Ga atoms at terraces and steps. Both first-principles calculations and analytical estimations of the experimental results gave similar values of difference in binding energies; this value is 0.3 eV. Finally, it was studied experimentally whether gallium can act as a surfactant in AlN growth by NH3 MBE at elevated temperatures. Gallium application has allowed us to grow a 300 nm thick AlN film with a RMS surface roughness of 2.2 Å over an area of 10 × 10 μm and a reduced density of screw dislocations.

Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers

DOE PAGES

Yadav, S. K.; Wang, J.; Liu, X. -Y.

2016-06-13

An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. Furthermore, the formation of a zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamicallymore » driven process.« less

Anomalous vibrational modes in few layer WTe 2 revealed by polarized Raman scattering and first-principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yan; Sheremetyeva, Natalya; Liang, Liangbo

When layered transition-metal dichalcogenides (TMDs) are scaled down from a three- to a two-dimensional geometry, electronic and structural transitions occur, leading to the emergence of properties not usually found in the bulk. Here, we report a systematic Raman study of exfoliated semi-metallic WTe 2 flakes with thickness ranging from few layers down to a single layer. A dramatic change in the Raman spectra occurs between the monolayer and few-layer WTe 2 as a vibrational mode centered at ~86.9 cm -1 in the monolayer splits into two active modes at 82.9 and 89.6 cm -1 in the bilayer. Davydov splitting ofmore » these two modes is found in the bilayer, as further evidenced by polarized Raman measurements. Strong angular dependence of Raman modes on the WTe 2 film thickness reflects that the existence of directional interlayer interaction, rather than isotropic van der Waals (vdw) coupling, is playing an essential role affecting the phonon modes, especially in anisotropic 2D WTe 2 material. Therefore, the strong evolution of Raman modes with thickness and polarization direction, can not only be a reliable fingerprint for the determination of the thickness and the crystallographic orientation, but can also be an ideal probe for such strong and directional interlayer interaction.« less

Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room temperature

NASA Astrophysics Data System (ADS)

Lapa, Havva Elif; Kökce, Ali; Al-Dharob, Mohammed; Orak, İkram; Özdemir, Ahmet Faruk; Altındal, Semsettin

2017-10-01

Au/(Zn-doped PVA)/n-4H-SiC metal/polymer/semiconductor (MPS) structures with different interfacial layer thickness values (50, 150, 500 nm) were fabricated and their electrical characteristics were compared. Their electrical parameters (i.e. reverse-bias saturation current (Io), ideality factor (n), zero-bias barrier height (BH) (Φbo), series and shunt resistances (Rs, Rsh)) were calculated from the forward bias current-voltage (IF-VF) data whereas other parameters (i.e. Fermi energy level (EF), BH (Vb) and donor concentration (Nd)) were calculated from the linear part of C-2-V characteristics at room temperature. Obtained results confirmed that the values of n, Φbo, Rs and Rsh increase with increasing interlayer thickness, and linear correlation between n and Φbo was observed. The high values of n for three structures can be ascribed to the presence of an interlayer, surface states (Nss) and barrier inhomogeneities. The energy density distribution profile of Nss was obtained from the IF-VF data by taking into account voltage-dependent effective BH (Ve) and n for each structure. The Ri vs V plot for these structures was obtained using both Ohm's law and Nicollian-Brews method. All these experimental results show that the interfacial layer and its thickness play an important role in main electric parameters of these structures.

Anomalous vibrational modes in few layer WTe 2 revealed by polarized Raman scattering and first-principles calculations

DOE PAGES

Cao, Yan; Sheremetyeva, Natalya; Liang, Liangbo; ...

2017-08-02

When layered transition-metal dichalcogenides (TMDs) are scaled down from a three- to a two-dimensional geometry, electronic and structural transitions occur, leading to the emergence of properties not usually found in the bulk. Here, we report a systematic Raman study of exfoliated semi-metallic WTe 2 flakes with thickness ranging from few layers down to a single layer. A dramatic change in the Raman spectra occurs between the monolayer and few-layer WTe 2 as a vibrational mode centered at ~86.9 cm -1 in the monolayer splits into two active modes at 82.9 and 89.6 cm -1 in the bilayer. Davydov splitting ofmore » these two modes is found in the bilayer, as further evidenced by polarized Raman measurements. Strong angular dependence of Raman modes on the WTe 2 film thickness reflects that the existence of directional interlayer interaction, rather than isotropic van der Waals (vdw) coupling, is playing an essential role affecting the phonon modes, especially in anisotropic 2D WTe 2 material. Therefore, the strong evolution of Raman modes with thickness and polarization direction, can not only be a reliable fingerprint for the determination of the thickness and the crystallographic orientation, but can also be an ideal probe for such strong and directional interlayer interaction.« less

MOCVD growth and study of thin films of indium nitride

NASA Astrophysics Data System (ADS)

Jain, Abhishek

This thesis is focused on a study of MOCVD growth of InN with the goal of providing new information on the effects of growth conditions and buffer/substrate materials on InN film properties. Initial studies, using both (111) Si and (0001) sapphire substrates, identified an optimum growth temperature window of 540--560°C for the formation of stable InN films. When attempting to grow InN films on sapphire with thicknesses greater than approximately 150 nanometers using an AlN buffer layer, the InN films were observed to delaminate from the buffer/substrate at growth temperature. The combined effect of compressive stress due to high lattice mismatch between InN and AlN (˜14%) and tensile stress due to grain coalescence along with the relatively weak bond strength of InN compared to GaN and AlN, is believed to cause the InN film to crack along the interface and delaminate. To further investigate the effect of the buffer layer on InN growth, studies were carried out using GaN films grown on sapphire as the growth template. Recent MBE results had indicated a significant difference in the thermal stability and growth mode of In-polar and N-polar InN, with improved properties reported for N-polar material grown on N-polar GaN. MOCVD growth of N-polar GaN is very difficult; consequently, all of the results reported in the literature for InN growth on GaN were likely carried out on Ga-polar material resulting in films with a high surface roughness. By utilizing N-polar and Ga-polar GaN films, it was possible to produce N-polar and In-polar InN films by MOCVD, as determined by convergent beam electron diffraction (CBED) analysis. Furthermore, the polarity was found to dramatically alter the surface roughness and growth mode of the InN films with enhanced lateral growth and reduced surface roughness obtained for N-polar InN. A qualitative model was proposed to explain the different growth mechanisms observed for In-polar and N-polar InN. In spite of the improvements in surface morphology obtained with growth of N-polar InN, delamination at the InN/GaN interface was still observed in these films, and was also present in In-polar InN samples. Attempts were made to further reduce the lattice mismatch and improve the adhesion between InN and GaN by using a compositionally graded InGaN buffer layer. The fabrication of InGaN over its entire composition range is challenging since the optimal growth parameters window for InGaN varies with composition and film quality is strongly dependent on temperature and precursor flow rates. The structural properties of the InN films grown on the graded InGaN layers were comparable to films grown directly on GaN, however, the film adhesion was significantly improved with no evidence of interfacial cracks between the InN and GaN. These preliminary results indicate that graded InGaN layers can be used to improve the adhesion of InN on both Ga-polar and N-polar GaN, however, further work is needed to develop graded InGaN buffer layers or constant composition InGaN interlayers with improved structural properties for InN growth. (Abstract shortened by UMI.)

Numerical Simulation of Ballistic Impact of Layered Aluminum Nitride Ceramic

DTIC Science & Technology

2015-09-01

tile(s) Aluminum nitride (AlN) 163 a Polymer layers Polyurethane foam 18 b Backing metal Aluminum 6061-T6 (Al) 23 c Projectile Tungsten heavy alloy...larger (a factor of 3.8) than the most dense polyurethane foam of the available constitutive models. Default options for element failure were imposed in...AlN), a polycrystalline ceramic. The total thickness of the tile(s) is 38.1 mm in all cases. A thin polyurethane laminate separates neighboring tiles

Understanding the growth of micro and nano-crystalline AlN by thermal plasma process

NASA Astrophysics Data System (ADS)

Kanhe, Nilesh S.; Nawale, Ashok B.; Gawade, Rupesh L.; Puranik, Vedavati G.; Bhoraskar, Sudha V.; Das, Asoka K.; Mathe, Vikas L.

2012-01-01

We report the studies related to the growth of crystalline AlN in a DC thermal plasma reactor, operated by a transferred arc plasma torch. The reactor is capable of producing the nanoparticles of Al and AlN depending on the composition of the reacting gas. Al and AlN micro crystals are formed at the anode placed on the graphite and nano crystalline Al and AlN gets deposited on the inner surface of the plasma reactor. X-ray diffraction, Raman spectroscopy analysis, single crystal X-ray diffraction and TGA-DTA techniques are used to infer the purity of post process crystals as a hexagonal AlN. The average particle size using SEM was found to be around 30 μm. The morphology of nanoparticles of Al and AlN, nucleated by gas phase condensation in a homogeneous medium were studied by transmission electron microscopy analysis. The particle ranged in size between 15 and 80 nm in diameter. The possible growth mechanism of crystalline AlN at the anode has been explained on the basis of non-equilibrium processes in the core of the plasma and steep temperature gradient near its periphery. The gas phase species of AlN and various constituent were computed using Murphy code based on minimization of free energy. The process provides 50% yield of microcrystalline AlN and remaining of Al at anode and that of nanocrystalline h-AlN and c-Al collected from the walls of the chamber is about 33% and 67%, respectively.

Carotid artery stents on CT angiography: in vitro comparison of different stent designs and sizes using 16-, 64- and 320-row CT scanners.

PubMed

Lettau, Michael; Kotter, Elmar; Bendszus, Martin; Hähnel, Stefan

2014-10-01

CT angiography (CTA) is an increasingly used method for evaluation of stented vessel segments. Our aim was to compare the appearance of different carotid artery stents in vitro on CTA using different CT scanners. Of particular interest was the measurement of artificial lumen narrowing (ALN) caused by the stent material within the stented vessel segment to determine whether CTA can be used to detect in-stent restenosis. CTA appearances of 16 carotid artery stents of different designs and sizes (4.0 to 11.0 mm) were investigated in vitro. CTA was performed using 16-, 64- and 320-row CT scanners. For each stent, artificial lumen narrowing (ALN) was calculated. ALN ranged from 18.77% to 59.86%. ALN in different stents differed significantly. In most stents, ALN decreased with increasing stent diameter. In all but one stents, ALN using sharp image kernels was significantly lower than ALN using medium image kernels. Considering all stents, ALN did not significantly differ using different CT scanners or imaging protocols. CTA evaluation of vessel patency after stent placement is possible, but is considerably impaired by ALN. Investigators should be informed about the method of choice for every stent and stent manufacturers should be aware of potential artifacts caused by their stents during noninvasive diagnostic methods such as CTA. Copyright © 2013 Elsevier Masson SAS. All rights reserved.

A Comparative Study of Thermal Conductivity and Tribological Behavior of Squeeze Cast A359/AlN and A359/SiC Composites

NASA Astrophysics Data System (ADS)

Shalaby, Essam. A. M.; Churyumov, Alexander. Yu.; Besisa, Dina. H. A.; Daoud, A.; Abou El-khair, M. T.

2017-07-01

A comparative study of thermal and wear behavior of squeeze cast A359 alloy and composites containing 5, 10 and 15 wt.% AlN and SiC particulates was investigated. It was pointed out that A359/AlN composites have a superior thermal conductivity as compared to A359 alloy or even to A359/SiC composites. Composites wear characteristics were achieved by pins-on-disk instrument over a load range of 20-60 N and a sliding speed of 2.75 m/s. Results showed that A359/AlN and A359/SiC composites exhibited higher wear resistance values compared to A359 alloy. Moreover, A359/AlN composites showed superior values of wear resistance than A359/SiC composites at relatively high loads. Friction coefficients and contact surface temperature for A359/AlN specimens decreased as AlN content increased, while they increased for A359/SiC. Investigations of worn surfaces revealed that A359/AlN composites were covered up by aluminum nitrides and iron oxides, which acted as smooth layers. However, A359/SiC composites were mainly covered only by iron oxides. The superior thermal conductivity and the significant wear resistance of the developed A359/AlN composites provided a high durable material suitable for industrial applications.

Adsorption properties of AlN on Si(111) surface: A density functional study

NASA Astrophysics Data System (ADS)

Yuan, Yinmei; Zuo, Ran; Mao, Keke; Tang, Binlong; Zhang, Zhou; Liu, Jun; Zhong, Tingting

2018-04-01

In the process of preparing GaN on Si substrate by MOCVD, an AlN buffer layer is very important. In this study, we conducted density functional theory calculations on the adsorption of AlN molecule on Si(111)-(2 × 2) surface, with the AlN molecule located horizontally or vertically above Si(111) surface at different adsorption sites. The calculations revealed that the lowest adsorption energy was at the N-top-Al-bridge site in the horizontal configuration, with the narrowest band gap, indicating that it was the most preferential adsorption growth status of AlN. In the vertical configurations, N adatom was more reactive and convenient to form bonds with the topmost Si atoms than Al adatom. When the N-end of the AlN molecule was located downward, the hollow site was the preferred adsorption site; when the Al-end was located downward, the bridge site was the most energetically favorable. Moreover, we investigated some electronic properties such as partial density of states, electron density difference, Mulliken populations, etc., revealing the microscale mechanism for AlN adsorption on Si(111) surface and providing theoretical support for adjusting the processing parameters during AlN or GaN production.

Through thickness mechanical properties of chemical vapor infiltration and nano-infiltration and transient eutectic-phase processed SiC/SiC composites

DOE PAGES

Shih, Chunghao Phillip; Katoh, Yutai; Ozawa, Kazumi; ...

2014-04-08

The through thickness (interlaminar) shear strength and trans-thickness tensile strength of three different nuclear-grade SiC/SiC composites were evaluated at room temperature by the double-notched shear and diametral compression tests, respectively. With increasing densification of the interlaminar matrix region, a transition in failure locations from interlayer to intrafiber bundle was observed, along with significant increases in the value of the interlaminar shear strength. Under trans-thickness tensile loading, cracks were found to propagate easily in the unidirectional composite. Furthermore, the 2D woven composite had a higher trans-thickness tensile strength (38 MPa) because the failure mode involved debonding, fiber pull-out and fiber failure.

Through thickness mechanical properties of chemical vapor infiltration and nano-infiltration and transient eutectic-phase processed SiC/SiC composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shih, Chunghao Phillip; Katoh, Yutai; Ozawa, Kazumi

The through thickness (interlaminar) shear strength and trans-thickness tensile strength of three different nuclear-grade SiC/SiC composites were evaluated at room temperature by the double-notched shear and diametral compression tests, respectively. With increasing densification of the interlaminar matrix region, a transition in failure locations from interlayer to intrafiber bundle was observed, along with significant increases in the value of the interlaminar shear strength. Under trans-thickness tensile loading, cracks were found to propagate easily in the unidirectional composite. Furthermore, the 2D woven composite had a higher trans-thickness tensile strength (38 MPa) because the failure mode involved debonding, fiber pull-out and fiber failure.

Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

DOE PAGES

Choi, Sukwon; Griffin, Benjamin A.

2016-01-06

Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Thus, across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertaintiesmore » for predicting the impact of AlN residual stress on the device performance.« less

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.

PubMed

Song, Jie; Han, Jung

2017-03-02

We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer.

Study on AN Intermediate Temperature Planar Sofc

NASA Astrophysics Data System (ADS)

Wang, Shaorong; Cao, Jiadi; Chen, Wenxia; Lu, Zhiyi; Wang, Daqian; Wen, Ting-Lian

An ITSOFC consisted of Ni/YSZ anode supported YSZ composite thin film and La0.6Sr0.4CoO3 (LSCO) cathode combined with a Ce0.8Sm0.2O1.9 (CSO) interlayer was studied. Tape cast method was applied to prepare green sheets of Ni/YSZ anode supported YSZ composite thin film. After isostatic pressing and cosintering, the YSZ film on the Ni/YSZ anode was gas-tight dense, and 15-30μm thick. The area of the composite film was over 100 cm2. A CSO interlayer was sintered on to the YSZ electrolyte film to protect LSCO cathode from reaction with YSZ at high temperatures. The LSCO cathode layer was screen printed onto the CSO interlayer and sintered at 1200°C for 3h to form a single cell. The obtained single cell was operated with H2 as fuel and O2 as oxidant. The cell performance and impedance were measured and discussed relating with the component contributions.

Enhancement of spin-Seebeck effect by inserting ultra-thin Fe{sub 70}Cu{sub 30} interlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kikuchi, D., E-mail: d.kikuchi@imr.tohoku.ac.jp; WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577; Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577

2015-02-23

We report the longitudinal spin-Seebeck effects (LSSEs) for Pt/Fe{sub 70}Cu{sub 30}/BiY{sub 2}Fe{sub 5}O{sub 12} (BiYIG) and Pt/BiYIG devices. The LSSE voltage was found to be enhanced by inserting an ultra-thin Fe{sub 70}Cu{sub 30} interlayer. This enhancement decays sharply with increasing the Fe{sub 70}Cu{sub 30} thickness, suggesting that it is not due to bulk phenomena, such as a superposition of conventional thermoelectric effects, but due to interface effects related to the Fe{sub 70}Cu{sub 30} interlayer. Combined with control experiments using Pt/Fe{sub 70}Cu{sub 30} devices, we conclude that the enhancement of the LSSE voltage in the Pt/Fe{sub 70}Cu{sub 30}/BiYIG devices is attributedmore » to the improvement of the spin-mixing conductance at the Pt/BiYIG interfaces.« less

Helium isotope enrichment by resonant tunneling through nanoporous graphene bilayers.

PubMed

Mandrà, Salvatore; Schrier, Joshua; Ceotto, Michele

2014-08-21

Graphene is impermeable to gases, but introducing subnanometer pores can allow for selective gas separation. Because graphene is only one atom thick, tunneling can play an important role, especially for low-mass gases such as helium, and this has been proposed as a means of separating (3)He from (4)He. In this paper, we consider the possibility of utilizing resonant tunneling of helium isotopes through nanoporous graphene bilayers. Using a model potential fit to previously reported DFT potential energy surfaces, we calculate the thermal rate constant as a function of interlayer separation using a recently described time-independent method for arbitrary multibarrier potentials. Resonant transmission allows for the total flux rate of (3)He to remain the same as the best-known single-barrier pores but doubles the selectivity with respect to (4)He when the optimal interlayer spacing of 4.6 Å is used. The high flux rate and selectivity are robust against variations of the interlayer spacing and asymmetries in the potential that may occur in experiment.

Fabrication and Characterization of Diffusion Bonds for Silicon Carbide

NASA Technical Reports Server (NTRS)

Halbig, Michael; Singh, Mrityunjay; Martin, Richard E.; Cosgriff, Laura M.

2007-01-01

Diffusion bonds of silicon carbide (SiC) were fabricated using several different types of titanium (Ti) based interlayers between the SiC substrates. The interlayers were an alloyed Ti foil, a pure Ti foil, and a physically vapor deposited (PVD) Ti coating. Microscopy was conducted to evaluate the cross-sections of the resulting bonds. Microprobe analysis identified reaction formed phases in the diffusion bonded region. Uniform and well adhered bonds were formed between the SiC substrates. In the case where the alloyed Ti foil or a thick Ti coating (i.e. 20 micron) was used as the interlayer, microcracks and several phases were present in the diffusion bonds. When a thinner interlayer was used (i.e. 10 micron PVD Ti), no microcracks were observed and only two reaction formed phases were present. The two phases were preferred and fully reacted phases that did not introduce thermal stresses or microcracks during the cool-down stage after processing. Diffusion bonded samples were evaluated with the non-destructive evaluation (NDE) methods of pulsed thermography and immersion ultrasonic testing. Joined SiC substrates that were fully bonded and that had simulated bond flaws in the interlayer were also evaluated using immersion ultrasound. Pull testing was conducted on the bonds to determine the tensile strength. To demonstrate the joining approach for a complex multilayered component for a low NOx injector application, the diffusion bonding approach was used to join three 4" diameter SiC discs that contained complex fuel and air flow channels.

Comparison of acute lobar nephronia and uncomplicated urinary tract infection in children.

PubMed

Yang, Ching-Chi; Shao, Pei-Lan; Lu, Chun-Yi; Tsau, Yong-Kwei; Tsai, I-Jung; Lee, Ping-Ing; Chang, Luan-Yin; Huang, Li-Ming

2010-06-01

This aim of this study was to assess the clinical manifestations, the microorganisms involved and their antibiotic resistance in children hospitalized due to acute lobar nephronia (ALN) and non-ALN community-acquired urinary tract infections (UTIs). We retrospectively reviewed the records of 265 previously healthy children hospitalized due to a first-episode of community-acquired febrile UTI between July 2004 and June 2007. Based on the results of renal ultrasonography and computed tomography, they were divided into ALN and non-ALN groups. Their demographic and clinical characteristics, distribution of microorganisms, and their antimicrobial resistance were analyzed. Of the total number of cases of children admitted with a first-episode community-acquired UTI, 19.2% (n=51) were diagnosed as ALN. Children with ALN were older (1.86 years vs. 0.81 years; p < 0.01), had longer periods of fever before admission (4.7 days vs. 1.4 days; p < 0.01), higher peak body temperatures (39.5°C vs. 38.9°C; p < 0.01), higher white cell counts (18.86 × 10(9)/L vs. 15.08 × 10(9)/L; p < 0.01) and higher C-reactive protein levels (9.0 mg/dL vs. 3.5 mg/dL; p < 0.01) compared with non-ALN children. Fever also persisted for longer after the start of antibiotic treatment in the ALN children (2.7 days vs. 1.4 days: p < 0.01) and they required longer hospital stays and incurred higher medical costs. The major pathogen found in ALN was E. coli (90%). The E. coli isolated from ALN children was more resistant to cotrimoxazole and ciprofloxacin than those from non-ALN children. ALN is not uncommon in children with a first-episode febrile UTI. They have a prolonged clinical course, higher inflammatory parameters, longer hospital stays and incur higher medical costs. E. coli is the major pathogen isolated from these children. Copyright © 2010 Taiwan Society of Microbiology. Published by Elsevier B.V. All rights reserved.

Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Wei-Chun; Chen, Hao-Wei

2018-06-01

This work demonstrates pentacene-based organic thin-film transistors (OTFTs) fabricated by inserting a 6,13-pentacenequinone (PQ) carrier injection layer between the source/drain (S/D) metal Au electrodes and pentacene channel layer. Compared to devices without a PQ layer, the performance characteristics including field-effect mobility, threshold voltage, and On/Off current ratio were significantly improved for the device with a 5-nm-thick PQ interlayer. These improvements are attributed to significant reduction of hole barrier height at the Au/pentacene channel interfaces. Therefore, it is believed that using PQ as the carrier injection layer is a good candidate to improve the pentacene-based OTFTs electrical performance.

Evaluation of a conventional chip seal under an overlay to mitigate reflective cracking (informal).

DOT National Transportation Integrated Search

2015-03-01

The Billings District initiated an experimental project in placing a conventional : chip seal (as an interlayer) on an existing pavement prior to an overlay : (composed of a 0.25 PMS thickness). The intent of the chip seal (CS) was to : seal exist...

Effect of annealing on magnetoresistance and microstructure of multilayered CoFe/Cu systems with different buffer layer

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Krinitsina, T. P.; Chernyshova, T. A.; Ustinov, V. V.

2015-02-01

The effects of annealing on the structure, magnetic hysteresis, and magnetoresistance of [Co90Fe10(15 Å)/Cu(23 Å)] n superlattices with Cr and Co90Fe10 buffer layers of different thicknesses have been studied. The optimum temperature and time of annealing that increase the magnetoresistance were shown to depend on the buffer layer thickness. The coefficients of effective interlayer diffusion due to the annealing have been determined.

Processing of Silver-Implanted Aluminum Nitride for Energy Harvesting Devices

NASA Astrophysics Data System (ADS)

Alleyne, Fatima Sierre

One of the more attractive sources of green energy has roots in the popular recycling theme of other green technologies, now known by the term "energy scavenging." In its most promising conformation, energy scavenging converts cyclic mechanical vibrations in the environment or random mechanical pressure pulses, caused by sources ranging from operating machinery to human footfalls, into electrical energy via piezoelectric transducers. While commercial piezoelectrics have evolved to favor lead zirconate titanate (PZT) for its combination of superior properties, the presence of lead in these ceramic compounds raises resistance to their application in anything "green" due to potential health implications during their manufacturing, recycling, or in-service application, if leaching occurs. Therefore in this study we have pursued the application of aluminum nitride (AlN) as a non-toxic alternative to PZT, seeking processing pathways to augment the modest piezoelectric performance of AlN and exploit its compatibility with complementary-metal-oxide semiconductor (CMOS) manufacturing. Such piezoelectric transducers have been categorized as microelectromechanical systems (MEMS), which despite more than a decade of research in this field, is plagued by delamination at the electrode/piezoelectric interface. Consequently the electric field essential to generate and sustain the piezoelectric response of these devices is lost, resulting in device failure. Working on the hypothesis that buried conducting layers can both mitigate the delamination problem and generate sufficient electric field to engage the operation of resonator devices, we have undertaken a study of silver ion implantation to experimentally assess its feasibility. As with most ion implantation procedures employed in semiconductor fabrication, the implanted sample is subjected to a thermal treatment, encouraging diffusion-assisted precipitation of the implanted species at high enough concentrations. The objective of this study is to understand the resulting phase transformation behavior during Ag precipitation with the intent to ultimately control the electrical operation of AlN piezoelectric resonators in energy scavenging applications. In this work, multiple source reactive ion sputtering was employed to deposit a thin film of AlN on a 525 microns thick Si substrate, followed by ion implantation (Ag cathode) into the aluminum nitride, and subsequent thermal annealing. Computer simulations were conducted to elucidate the projected range of the silver in the AlN epilayer as a result of the ion implantation process. A myriad of characterization methods including Rutherford Backscattering Spectrometry (RBS), x-ray diffraction (XRD), rocking curve, electron microscopy was employed to quantify the concentration of silver, morphology of silver precipitates, as well as the composition, crystallinity and degree of damage in the ion-implanted AlN samples with respect to thermal annealing conditions. The presence, or lack of precipitates in the samples was utilized to draw conclusions about the feasibility of developing a buried conductive layer in a ceramic matrix via ion implantation. Computer simulations results obtained via TRIM and TRIDYN confirmed that the maximum concentration of silver lied within 30 -- 47 nm from the surface. The RBS data verified the presence of Si, Al, N, Ag, and O2 , whose concentration varied with temperature. X-ray diffraction and electron microscopy corroborated the crystallinity of the AlN epilayer. Electron diffraction confirmed both the epitaxy of the AlN film on the (001) Si substrate and the crystalline quality of the epilayer prior to and after the thermal annealing treatment. Electron microscopy revealed that the sputtered AlN film grew epitaxially in a columnar morphology and silver precipitates did form in some of the aluminum nitride samples implanted but only in those implanted with a higher concentration of Ag under high-energy implantation conditions. It is concluded that the Ag implanted region does indeed have potential as a buried contact layer for piezoelectric activation and sensing if the critical concentration and appropriate thermal conditions can be attained.

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study.

PubMed

Kuchuk, Andrian V; Kryvyi, Serhii; Lytvyn, Petro M; Li, Shibin; Kladko, Vasyl P; Ware, Morgan E; Mazur, Yuriy I; Safryuk, Nadiia V; Stanchu, Hryhorii V; Belyaev, Alexander E; Salamo, Gregory J

2016-12-01

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.

Role of 1% alendronate gel as adjunct to mechanical therapy in the treatment of chronic periodontitis among smokers.

PubMed

Sharma, Anuj; Raman, Achala; Pradeep, Avani Raju

2017-01-01

Alendronate (ALN) inhibits osteoclastic bone resorption and triggers osteostimulative properties both in vivo and in vitro, as shown by increase in matrix formation. This study aimed to explore the efficacy of 1% ALN gel as local drug delivery (LDD) in adjunct to scaling and root planing (SRP) for the treatment of chronic periodontitis among smokers. 75 intrabony defects were treated in 46 male smokers either with 1% ALN gel or placebo gel. ALN gel was prepared by adding ALN into carbopol-distilled water mixture. Clinical parameters [modified sulcus bleeding index, plaque index, probing depth (PD), and periodontal attachment level (PAL)] were recorded at baseline, at 2 months, and at 6 months, while radiographic parameters were recorded at baseline and at 6 months. Defect fill at baseline and at 6 months was calculated on standardized radiographs by using the image analysis software. Mean PD reduction and mean PAL gain were found to be greater in the ALN group than in the placebo group, both at 2 and 6 months. Furthermore, a significantly greater mean percentage of bone fill was found in the ALN group (41.05±11.40%) compared to the placebo group (2.5±0.93%). The results of this study showed 1% ALN stimulated a significant increase in PD reduction, PAL gain, and an improved bone fill compared to placebo gel in chronic periodontitis among smokers. Thus, 1% ALN, along with SRP, is effective in the treatment of chronic periodontitis in smokers.

Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors.

PubMed

Nazir, Ghazanfar; Khan, Muhammad Farooq; Aftab, Sikandar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Rehman, Malik Abdul; Seo, Yongho; Eom, Jonghwa

2017-12-28

Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS₂/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr), the electrical transport in our Gr/MoS₂/(Cr/Au) vertical transistors can be significantly modified by using back-gate voltage. Schottky barrier height at the interface between Gr and MoS₂ can be modified by back-gate voltage and the current bias. Vertical resistance (R vert ) of a Gr/MoS₂/(Cr/Au) transistor is compared with planar resistance (R planar ) of a conventional lateral MoS₂ field-effect transistor. We have also studied electrical properties for various thicknesses of MoS₂ channels in both vertical and lateral transistors. As the thickness of MoS₂ increases, R vert increases, but R planar decreases. The increase of R vert in the thicker MoS₂ film is attributed to the interlayer resistance in the vertical direction. However, R planar shows a lower value for a thicker MoS₂ film because of an excess of charge carriers available in upper layers connected directly to source/drain contacts that limits the conduction through layers closed to source/drain electrodes. Hence, interlayer resistance associated with these layers contributes to planer resistance in contrast to vertical devices in which all layers contribute interlayer resistance.

A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

NASA Astrophysics Data System (ADS)

Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

2018-05-01

Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

NASA Astrophysics Data System (ADS)

Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

2018-01-01

The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

Thermally assisted interlayer magnetic coupling through Ba{sub 0.05}Sr{sub 0.95}TiO{sub 3} barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carreira, Santiago J.; Steren, Laura B.; Consejo Nacional de Investigaciones Científicas y Técnicas, Ciudad Autonoma de Buenos Aires C1425FQB

2016-08-08

We report on the interlayer exchange coupling across insulating barriers observed on Ni{sub 80}Fe{sub 20}/Ba{sub 0.05}Sr{sub 0.95}TiO{sub 3}/La{sub 0.66}Sr{sub 0.33}MnO{sub 3} (Py/BST{sub 0.05}/LSMO) trilayers. The coupling mechanism has been analyzed in terms of the barrier thickness, samples' substrate, and temperature. We examined the effect of MgO (MGO) and SrTiO{sub 3} (STO) (001) single-crystalline substrates on the magnetic coupling and also on the magnetic anisotropies of the samples in order to get a deeper understanding of the magnetism of the structures. We measured a weak coupling mediated by spin-dependent tunneling phenomena whose sign and strength depend on barrier thickness and substrate.more » An antiferromagnetic (AF) exchange prevails for most of the samples and smoothly increases with the barrier thicknesses as a consequence of the screening effects of the BST{sub 0.05}. The coupling monotonically increases with temperature in all the samples and this behavior is attributed to thermally assisted mechanisms. The magnetic anisotropy of both magnetic components has a cubic symmetry that in the case of permalloy is added to a small uniaxial component.« less

Mechanical and physicochemical properties of AlN thin films obtained by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Cibert, C.; Tétard, F.; Djemia, P.; Champeaux, C.; Catherinot, A.; Tétard, D.

2004-10-01

AlN thin films have been deposited on Si(100) substrates by a pulsed laser deposition method. The deposition parameters (pressure, temperature, purity of target) play an important role in the mechanical and physicochemical properties. The films have been characterized using X-ray diffraction, atomic force microscopy, Brillouin light scattering, Fourier transform infrared spectroscopy and wettability testing. With a high purity target of AlN and a temperature deposition of 750 ∘C, the measured Rayleigh wave velocity is close to the one previously determined for AlN films grown at high temperature by metal-organic chemical vapour deposition. Growth of nanocrystalline AlN at low temperature and of AlN film with good crystallinity for samples deposited at higher temperature is confirmed by infrared spectroscopy, as it was by atomic force microscopy, in agreement with X-ray diffraction results. A high hydrophobicity has been measured with zero polar contribution for the surface energy. These results confirm that films made by pulsed laser deposition of pure AlN at relatively low temperature have good prospects for microelectromechanical systems applications.

Bone metastasis target redox-responsive micell for the treatment of lung cancer bone metastasis and anti-bone resorption.

PubMed

Ye, Wei-Liang; Zhao, Yi-Pu; Cheng, Ying; Liu, Dao-Zhou; Cui, Han; Liu, Miao; Zhang, Bang-Le; Mei, Qi-Bing; Zhou, Si-Yuan

2018-01-16

In order to inhibit the growth of lung cancer bone metastasis and reduce the bone resorption at bone metastasis sites, a bone metastasis target micelle DOX@DBMs-ALN was prepared. The size and the zeta potential of DOX@DBNs-ALN were about 60 nm and -15 mV, respectively. DOX@DBMs-ALN exhibited high binding affinity with hydroxyapatite and released DOX in redox-responsive manner. DOX@DBMs-ALN was effectively up taken by A549 cells and delivered DOX to the nucleus of A549 cells, which resulted in strong cytotoxicity on A549 cells. The in vivo experimental results indicated that DOX@DBMs-ALN specifically delivered DOX to bone metastasis site and obviously prolonged the retention time of DOX in bone metastasis site. Moreover, DOX@DBMs-ALN not only significantly inhibited the growth of bone metastasis tumour but also obviously reduced the bone resorption at bone metastasis sites without causing marked systemic toxicity. Thus, DOX@DBMs-ALN has great potential in the treatment of lung cancer bone metastasis.

Neutron Productions from thin Be target irradiated by 50 MeV/u 238U beam

NASA Astrophysics Data System (ADS)

Lee, Hee-Seock; Oh, Joo-Hee; Jung, Nam-Suk; Oranj, Leila Mokhtari; Nakao, Noriaki; Uwamino, Yoshitomo

2017-09-01

Neutrons generated from thin beryllium target by 50 MeV/u 238U beam were measured using activation analysis at 15, 30, 45, and 90 degrees from the beam direction. A 0.085 mm-thick Be stripper of RIBF was used as the neutron generating target. Activation detectors of bismuth, cobalt, and aluminum were placed out of the stripper chamber. The threshold reactions of 209Bi(n, xn)210-xBi(x=4 8), 59Co(n, xn)60-xCO(x=2 5), 59Co(n, 2nα)54Mn, 27Al(n, α)24Na, and 27Al(n,2nα)22Na were applied to measure the production rates of radionuclides. The neutron spectra were obtained using an unfolding method with the SAND-II code. All of production rates and neutron spectra were compared with the calculated results using Monte Carlo codes, the PHITS and the FLUKA. The FLUKA results showed better agreement with the measurements than the PHITS. The discrepancy between the measurements and the calculations were discussed.

Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che

2012-06-29

GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign ofmore » cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.« less

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

PubMed

Gao, Na; Lin, Wei; Chen, Xue; Huang, Kai; Li, Shuping; Li, Jinchai; Chen, Hangyang; Yang, Xu; Ji, Li; Yu, Edward T; Kang, Junyong

2014-12-21

Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as thin as two atomic layers (∼ 0.5 nm) were grown. Theoretical and experimental results demonstrate that an optical absorption band as narrow as 9 nm (210 meV) at deep-ultraviolet wavelengths can be produced, and is attributable to interband transitions between quantum states along the [0001] direction in ultrathin GaN atomic layers isolated by AlN barriers. The absorption wavelength can be precisely engineered by adjusting the thickness of the GaN atomic layers because of the quantum confinement effect. These results represent a major advance towards the realization of wavelength selectable and narrowband photodetectors in the deep-ultraviolet region without any additional optical filters.

The Interface Structure of FeSe Thin Film on CaF2 Substrate and its Influence on the Superconducting Performance.

PubMed

Qiu, Wenbin; Ma, Zongqing; Patel, Dipak; Sang, Lina; Cai, Chuanbing; Shahriar Al Hossain, Mohammed; Cheng, Zhenxiang; Wang, Xiaolin; Dou, Shi Xue

2017-10-25

The investigations into the interfaces in iron selenide (FeSe) thin films on various substrates have manifested the great potential of showing high-temperature-superconductivity in this unique system. In present work, we obtain FeSe thin films with a series of thicknesses on calcium fluoride (CaF 2 ) (100) substrates and glean the detailed information from the FeSe/CaF 2 interface by using scanning transmission electron microscopy (STEM). Intriguingly, we have found the universal existence of a calcium selenide (CaSe) interlayer with a thickness of approximate 3 nm between FeSe and CaF 2 in all the samples, which is irrelevant to the thickness of FeSe layers. A slight Se deficiency occurs in the FeSe layer due to the formation of CaSe interlayer. This Se deficiency is generally negligible except for the case of the ultrathin FeSe film (8 nm in thickness), in which the stoichiometric deviation from FeSe is big enough to suppress the superconductivity. Meanwhile, in the overly thick FeSe layer (160 nm in thickness), vast precipitates are found and recognized as Fe-rich phases, which brings about degradation in superconductivity. Consequently, the thickness dependence of superconducting transition temperature (T c ) of FeSe thin films is investigated and one of our atmosphere-stable FeSe thin film (127 nm) possesses the highest T c onset /T c zero as 15.1 K/13.4 K on record to date in the class of FeSe thin film with practical thickness. Our results provide a new perspective for exploring the mechanism of superconductivity in FeSe thin film via high-resolution STEM. Moreover, approaches that might improve the quality of FeSe/CaF 2 interfaces are also proposed for further enhancing the superconducting performance in this system.

Efficient charge injection in p-type polymer field-effect transistors with low-cost molybdenum electrodes through V2O5 interlayer.

PubMed

Baeg, Kang-Jun; Bae, Gwang-Tae; Noh, Yong-Young

2013-06-26

Here we report high-performance polymer OFETs with a low-cost Mo source/drain electrode by efficient charge injection through the formation of a thermally deposited V2O5 thin film interlayer. A thermally deposited V2O5 interlayer is formed between a regioregular poly(3-hexylthiophene) (rr-P3HT) or a p-type polymer semiconductor containing dodecyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and the Mo source/drain electrode. The P3HT or PC12TV12T OFETs with the bare Mo electrode exhibited lower charge carrier mobility than those with Au owing to a large barrier height for hole injection (0.5-1.0 eV). By forming the V2O5 layer, the P3HT or PC12TV12T OFETs with V2O5 on the Mo electrode exhibited charge carrier mobility comparable to that of a pristine Au electrode. Best P3HT or PC12TV12T OFETs with 5 nm thick V2O5 on Mo electrode show the charge carrier mobility of 0.12 and 0.38 cm(2)/(V s), respectively. Ultraviolet photoelectron spectroscopy results exhibited the work-function of the Mo electrode progressively changed from 4.3 to 4.9 eV with an increase in V2O5 thickness from 0 to 5 nm, respectively. Interestingly, the V2O5-deposited Mo exhibits comparable Rc to Au, which mainly results from the decreased barrier height for hole carrier injection from the low-cost metal electrode to the frontier molecular orbital of the p-type polymer semiconductor after the incorporation of the transition metal oxide hole injection layer, such as V2O5. This enables the development of large-area, low-cost electronics with the Mo electrodes and V2O5 interlayer.

Alendronate-Eluting Biphasic Calcium Phosphate (BCP) Scaffolds Stimulate Osteogenic Differentiation

PubMed Central

Kim, Sung Eun; Lee, Deok-Won; Kang, Eun Young; Jeong, Won Jae; Lee, Boram; Jeong, Myeong Seon; Kim, Hak Jun; Park, Kyeongsoon; Song, Hae-Ryong

2015-01-01

Biphasic calcium phosphate (BCP) scaffolds have been widely used in orthopedic and dental fields as osteoconductive bone substitutes. However, BCP scaffolds are not satisfactory for the stimulation of osteogenic differentiation and maturation. To enhance osteogenic differentiation, we prepared alendronate- (ALN-) eluting BCP scaffolds. The coating of ALN on BCP scaffolds was confirmed by scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), and attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR). An in vitro release study showed that release of ALN from ALN-eluting BCP scaffolds was sustained for up to 28 days. In vitro results revealed that MG-63 cells grown on ALN-eluting BCP scaffolds exhibited increased ALP activity and calcium deposition and upregulated gene expression of Runx2, ALP, OCN, and OPN compared with the BCP scaffold alone. Therefore, this study suggests that ALN-eluting BCP scaffolds have the potential to effectively stimulate osteogenic differentiation. PMID:26221587

Compatibility of AlN with liquid lithium

NASA Astrophysics Data System (ADS)

Terai, T.; Suzuki, A.; Yoneoka, T.; Mitsuyama, T.

2000-12-01

Development of ceramic coatings is one of the most important subjects in liquid blanket research and development. Compatibility of sintered AlN and AlN coatings with liquid lithium, a candidate breeding material, was investigated. Sintered AlN with or without the sintering aid of Y 2O 3 examined in lithium at 773 K for 1390 h showed a slight decrease in electrical resistivity because of a reduction in Al 2O 3 impurity, though AlN and Y 2O 3 components themselves were subject to no severe corrosion. On the other hand, AlN ceramic coatings on SUS430 with high resistivity (> 10 11 Ω m) fabricated by the RF sputtering method disappeared in liquid lithium at 773 K in 56 h. This may be because cracks were formed due to the difference in thermal expansion between the coatings and the substrate or because the oxide formed between the two was removed by liquid lithium.

Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Christopher

2011-08-11

We demonstrate the strain release of LaAlO{sub 3} epitaxial film on SrTiO{sub 3} (001) by inserting ultra-thin 'SrAlO{sub x}' buffer layers. Although SrAlO{sub x} is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlO{sub x}, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO{sub 3} filmand the SrTiO{sub 3} substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite film farmore » below the thermodynamic critical thickness. A central issue in heteroepitaxial filmgrowth is the inevitable difference in lattice constants between the filmand substrate. Due to this lattice mismatch, thin film are subjected to microstructural strain, which can have a significan effect on the filmproperties. This challenge is especially prominent in the rapidly developing fiel of oxide electronics, where much interest is focused on incorporating the emergent physical properties of oxides in devices. Although strain can be used to great effect to engineer unusual ground states, it is often deleterious for bulk first-orde phase transitions, which are suppressed by the strain and symmetry constraints of the substrate. While there are some reports discussing the control of the lattice mismatch in oxides using thick buffer layers, the materials choice, lattice-tunable range, and control of misfit dislocations are still limited. In this Letter, we report the fabrication of strain-relaxed LaAlO{sub 3} (LAO) thin film on SrTiO{sub 3} (STO) (001) using very thin 'SrAlO{sub x}' (SAO) buffer layers. Whereas for 1 or 2 pseudo-perovskite unit cells (uc) of SAO, the subsequent LAO filmis strained to the substrate, at a critical thickness of 3 uc the SAO interlayer abruptly relieves the lattice mismatch between the LAO and the STO, although maintaining the relative crystalline orientation between the filmand the substrate. For 4 uc or greater, the perovskite epitaxial template is lost and the LAO filmis amorphous. These results suggest that metastable interlayers can be used for strain release on the nanometer scale.« less

Role of 1% alendronate gel as adjunct to mechanical therapy in the treatment of chronic periodontitis among smokers

PubMed Central

SHARMA, Anuj; RAMAN, Achala; PRADEEP, Avani Raju

2017-01-01

Abstract Objective Alendronate (ALN) inhibits osteoclastic bone resorption and triggers osteostimulative properties both in vivo and in vitro, as shown by increase in matrix formation. This study aimed to explore the efficacy of 1% ALN gel as local drug delivery (LDD) in adjunct to scaling and root planing (SRP) for the treatment of chronic periodontitis among smokers. Material and Methods 75 intrabony defects were treated in 46 male smokers either with 1% ALN gel or placebo gel. ALN gel was prepared by adding ALN into carbopol-distilled water mixture. Clinical parameters [modified sulcus bleeding index, plaque index, probing depth (PD), and periodontal attachment level (PAL)] were recorded at baseline, at 2 months, and at 6 months, while radiographic parameters were recorded at baseline and at 6 months. Defect fill at baseline and at 6 months was calculated on standardized radiographs by using the image analysis software. Results Mean PD reduction and mean PAL gain were found to be greater in the ALN group than in the placebo group, both at 2 and 6 months. Furthermore, a significantly greater mean percentage of bone fill was found in the ALN group (41.05±11.40%) compared to the placebo group (2.5±0.93%). Conclusions The results of this study showed 1% ALN stimulated a significant increase in PD reduction, PAL gain, and an improved bone fill compared to placebo gel in chronic periodontitis among smokers. Thus, 1% ALN, along with SRP, is effective in the treatment of chronic periodontitis in smokers. PMID:28678942

Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gillinger, M.; Schneider, M.; Bittner, A.

2015-02-14

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 hmore » in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.« less

Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

2015-02-23

Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysismore » also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.« less

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Defect reduction in seeded aluminum nitride crystal growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.

2017-04-18

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Defect reduction in seeded aluminum nitride crystal growth

DOEpatents

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A.

2017-06-06

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Defect reduction in seeded aluminum nitride crystal growth

DOEpatents

Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

2017-09-26

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Angiographic CT: in vitro comparison of different carotid artery stents-does stent orientation matter?

PubMed

Lettau, Michael; Bendszus, Martin; Hähnel, Stefan

2013-06-01

Our aim was to evaluate the in vitro visualization of different carotid artery stents on angiographic CT (ACT). Of particular interest was the influence of stent orientation to the angiography system by measurement of artificial lumen narrowing (ALN) caused by the stent material within the stented vessel segment to determine whether ACT can be used to detect restenosis within the stent. ACT appearances of 17 carotid artery stents of different designs and sizes (4.0 to 11.0 mm) were investigated in vitro. Stents were placed in different orientations to the angiography system. Standard algorithm image reconstruction and stent-optimized algorithm image reconstruction was performed. For each stent, ALN was calculated. With standard algorithm image reconstruction, ALN ranged from 19.0 to 43.6 %. With stent-optimized algorithm image reconstruction, ALN was significantly lower and ranged from 8.2 to 18.7 %. Stent struts could be visualized in all stents. Differences in ALN between the different stent orientations to the angiography system were not significant. ACT evaluation of vessel patency after stent placement is possible but is impaired by ALN. Stent orientation of the stents to the angiography system did not significantly influence ALN. Stent-optimized algorithm image reconstruction decreases ALN but further research is required to define the visibility of in-stent stenosis depending on image reconstruction.

Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy

PubMed Central

Wu, PeiTsen; Funato, Mitsuru; Kawakami, Yoichi

2015-01-01

Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0 eV (207 nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device substrates for such applications, the crystal growth of bulky AlN has been extensively studied. Two growth methods seem especially promising: hydride vapor phase epitaxy (HVPE) and sublimation. However, the former requires hazardous gases such as hydrochloric acid and ammonia, while the latter needs extremely high growth temperatures around 2000 °C. Herein we propose a novel vapor-phase-epitaxy-based growth method for AlN that does not use toxic materials; the source precursors are elementary aluminum and nitrogen gas. To prepare our AlN, we constructed a new growth apparatus, which realizes growth of AlN single crystals at a rate of ~18 μm/h at 1550 °C using argon as the source transfer via the simple reaction Al + 1/2N2 → AlN. This growth rate is comparable to that by HVPE, and the growth temperature is much lower than that in sublimation. Thus, this study opens up a novel route to achieve environmentally friendly growth of AlN. PMID:26616203

Low-Temperature Sintering of AlN Ceramics by Sm2O3-Y2O3-CaO Sintering Additives Formed via Decomposition of Nitrate Solutions

NASA Astrophysics Data System (ADS)

Zhan, Jun; Cao, Ye; Zhang, Hao; Guo, Jun; Zhang, Jianhua; Geng, Chunlei; Shi, Changdong; Cui, Song; Tang, Wenming

2017-01-01

The Sm, Y and Ca anhydrous nitrates were mixed with the AlN powder in ethanol and then decomposed into the Sm2O3-Y2O3-CaO sintering additives via calcining. Low-temperature sintering of the AlN ceramics was carried out at temperature range from 1675 to 1750 °C. Effects of the composition and adding amount of the sintering additives on the phases, microstructures and properties of the AlN ceramics were investigated. During sintering the AlN ceramics, main secondary phases of CaYAl3O7 and CaSmAl3O7 form. The relative density, bending strength and thermal conductivity of the AlN ceramics increase with the increase in the rare-earth oxides in them. The thermal conductivity of the sintered AlN ceramics is also greatly affected by the distribution of the secondary phases. As sintered at 1750 °C, the AlN ceramics by adding the sintering additives of 2 wt.% Sm2O3, 2 wt.% Y2O3 and 1 wt.% CaO formed via decomposition of their nitrates is fully dense and have the optimal bending strength and thermal conductivity of 402.1 MPa and 153.7 W/(m K), respectively.

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

NASA Astrophysics Data System (ADS)

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

2017-06-01

Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

Gas Suppression via Copper Interlayers in Magnetron Sputtered Al-Cu2O Multilayers.

PubMed

Kinsey, Alex H; Slusarski, Kyle; Sosa, Steven; Weihs, Timothy P

2017-07-05

The use of thin-foil, self-propagating thermite reactions to bond components successfully depends on the ability to suppress gas generation and avoid pore formation during the exothermic production of brazes. To study the mechanisms of vapor production in diluted thermites, thin film multilayer Al-Cu-Cu 2 O-Cu foils are produced via magnetron sputtering, where the Cu layer thickness is systematically increased from 0 to 100 nm in 25 nm increments. The excess Cu layers act as diffusion barriers, limiting the transport of oxygen from the oxide to the Al fuel, as determined by slow heating differential scanning calorimetry experiments. Furthermore, by adding excess Cu to the system, the temperature of the self-propagating thermite reactions drops below the boiling point of Cu, eliminating the metal vapor production. It is determined that Cu vapor production can be eliminated by increasing the Cu interlayer thickness above 50 nm. However, the porous nature of the final products suggests that only metal vapor production is suppressed via dilution. Gas generation via oxygen release is still capable of producing a porous reaction product.

Alendronate is more effective than elcatonin in improving pain and quality of life in postmenopausal women with osteoporosis.

PubMed

Iwamoto, J; Makita, K; Sato, Y; Takeda, T; Matsumoto, H

2011-10-01

A randomized controlled trial was performed to compare the short-term effects of alendronate (ALN) and ECT on pain and quality of life (QOL) in postmenopausal women with osteoporosis. Back pain and QOL [Short-Form Health Survey (SF-8)] significantly improved at 1, 3, and 6 months in both groups, with greater improvements in the ALN group than in the ECT group. These results suggested that ALN reduced back pain and improved QOL more markedly than ECT in postmenopausal osteoporotic women with back pain. Intramuscular ECT is known to reduce pain via the central nervous system. A multicenter randomized controlled trial was performed to compare the short-term effects of ALN and ECT on pain and QOL in postmenopausal women with osteoporosis. One hundred and 94 postmenopausal osteoporotic women with back pain (mean age 79.8 years, range 60-96 years) were randomly divided into two groups: the ALN group (35 mg weekly) and the ECT group (intramuscular 20 units a week). The duration of the study was 6 months. The trial was completed in 97 (100%) women of the ALN group and 96 (99.0%) women of the ECT group. Urinary levels of cross-linked N-terminal telopeptide of type I collagen (NTX), serum alkaline phosphatase (ALP), face scale score (FSS, back pain), and SF-8 (QOL) were monitored. Urinary NTX levels significantly decreased at 3 months in the ALN group, but not in the ECT group. Serum ALP levels significantly decreased at 6 months in the both groups, with a greater reduction in the ALN group. The FSS and SF-8 significantly improved at 1, 3, and 6 months in both groups, with greater improvements in the ALN group than in the ECT group. ALN suppressed bone turnover, reduced back pain, and improved QOL more markedly than ECT in postmenopausal osteoporotic women with back pain.

The use of aluminum nitride to improve Aluminum-26 Accelerator Mass Spectrometry measurements and production of Radioactive Ion Beams

NASA Astrophysics Data System (ADS)

Janzen, Meghan S.; Galindo-Uribarri, Alfredo; Liu, Yuan; Mills, Gerald D.; Romero-Romero, Elisa; Stracener, Daniel W.

2015-10-01

We present results and discuss the use of aluminum nitride as a promising source material for Accelerator Mass Spectrometry (AMS) and Radioactive Ion Beams (RIBs) science applications of 26Al isotopes. The measurement of 26Al in geological samples by AMS is typically conducted on Al2O3 targets. However, Al2O3 is not an ideal source material because it does not form a prolific beam of Al- required for measuring low-levels of 26Al. Multiple samples of aluminum oxide (Al2O3), aluminum nitride (AlN), mixed Al2O3-AlN as well as aluminum fluoride (AlF3) were tested and compared using the ion source test facility and the stable ion beam (SIB) injector platform at the 25-MV tandem electrostatic accelerator at Oak Ridge National Laboratory. Negative ion currents of atomic and molecular aluminum were examined for each source material. It was found that pure AlN targets produced substantially higher beam currents than the other materials and that there was some dependence on the exposure of AlN to air. The applicability of using AlN as a source material for geological samples was explored by preparing quartz samples as Al2O3 and converting them to AlN using a carbothermal reduction technique, which involved reducing the Al2O3 with graphite powder at 1600 °C within a nitrogen atmosphere. The quartz material was successfully converted to AlN. Thus far, AlN proves to be a promising source material and could lead towards increasing the sensitivity of low-level 26Al AMS measurements. The potential of using AlN as a source material for nuclear physics is also very promising by placing 26AlN directly into a source to produce more intense radioactive beams of 26Al.

Precipitation of aluminum nitride in a high strength maraging steel with low nitrogen content

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeanmaire, G., E-mail: guillaume.jeanmaire@univ-lorraine.fr; Aubert and Duval, BP1, 63770 Les Ancizes; Dehmas, M.

2014-12-15

In the present work, aluminum nitride (AlN) precipitation was investigated in a X23NiCoCrMoAl13-6-3 maraging steel with low nitrogen content (wt.% N = 5.5 ppm). A reliable and robust automatic method by scanning electron microscopy observations coupled with energy dispersive X-ray spectroscopy was developed for the quantification of AlN precipitates. The first stage was to identify the solvus temperature and to develop a heat treatment able to dissolve the AlN precipitates. The experimental determination of equilibrium conditions and solvus temperature show good agreement with ThermoCalc® simulation. Then, from this AlN-free state, the cooling rate, isothermal holding time and temperature were themore » subject of an intensive investigation in the austenite region of this maraging steel. In spite of the high temperatures used during heat treatments, the growth kinetic of the largest AlN precipitates (> 1 μm) is slow. The cooling rate has a major effect on the size and the number density of AlN due to a higher driving force for nucleation at low temperatures. At last, quenching prior to isothermal annealing at high temperatures leads to fine and dense AlN precipitation, resulting from the martensite to austenite transformation. Experimental results will be discussed and compared with kinetic data obtained with the mobility database MobFe2 implemented in Dictra® software. - Highlights: • Slow dissolution kinetic of AlN precipitates due to both their large size and small chemical driving force • Significant effects of cooling rate prior isothermal heat treatment, holding time and temperature on AlN precipitation • Size of AlN precipitates can be reduced by quenching prior isothermal holding. • Fine precipitation of AlN related to the α → γ transformation.« less

Terahertz characterization of Y2O3-added AlN ceramics

NASA Astrophysics Data System (ADS)

Kang, Seung Beom; Chung, Dong Chul; Kim, Sung-Jin; Chung, Jun-Ki; Park, Sang-Yeup; Kim, Ki-Chul; Kwak, Min Hwan

2016-12-01

Terahertz optical and dielectric properties of AlN ceramics fabricated by hot pressed sintering are investigated by THz time-domain spectroscopy in the frequency range of 0.2-3.5 THz. The measured properties of the pure AlN ceramic are compared with those of Y2O3-added AlN ceramic. Two prominent resonance modes, which are essentially responsible for the dielectric properties of the Y2O3-added AlN in terahertz regime, are characterized at ωTO1/(2π) = 2.76 THz (92 cm-1) and ωTO2/(2π) = 18.2 THz (605 cm-1) and are well described by the pseudo-harmonic oscillator model through theoretical fitting. The resonance ωTO1 at 2.76 THz is proposed to be due to the formation of a YAG (Y3Al5O12) secondary phase in Y2O3-added AlN ceramic. From the experimental results, good correlation is observed between the prominent peak of YAG secondary phase at 2.76 THz and thermal conductivity. Additionally, there is a high correlation between densification and refractive index of AlN ceramics fabricated by hot pressed sintering.

The role of detachment and interlayer shear zones in the structural evolution of the southern Espinhaço range, eastern Brazil

NASA Astrophysics Data System (ADS)

Kuchenbecker, Matheus; Sanglard, Júlio Carlos Destro

2018-07-01

Sedimentary rocks usually show a significant mechanical anisotropy due to its layered nature. Because of this, they play an important role controlling rock deformation and the study of the deformation partitioning caused by rheological heterogeneities becomes a crucial step to understand the inversion of sedimentary basins. The detachment and interlayer shear zones, described at southern Espinhaço range, correspond to part of the structural collection that records the compressive deformation which is associated to the Brazilian-Pan African orogeny during Gondwana amalgamation. The mechanical contrast between lithological units is the main parameter of control for the occurrence of these zones which can be found with variable thickness from millimeter interlayer shear zones to regional-sized basement-cover detachment zones. The phyllitic layers are the most incompetent lithotype among metasedimentary rocks and they play an important role in the ductile-brittle regional deformation by accommodating much of the deformation during faulting and/or folding. Even though being a more competent rock, internal interlayer shear zones and other shear structures can be found in quartzite when in contact with weaker rocks. These structures accommodate a significant amount of deformation at the southern Espinhaço range and, because of this, they are of great value in understanding the inversion of the Espinhaço basins during West Gondwana assembly. The focus of the present paper is to discuss the main situations where interlayer shear occurs, to present a brief compendium of the main structures associated to this process and to add parameters to its recognition and interpretation.

Study of composite thin films for applications in high density data storage

NASA Astrophysics Data System (ADS)

Yuan, Hua

Granular Co-alloy + oxide thin films are currently used as the magnetic recording layer of perpendicular media in hard disk drives. The microstructure of these films is composed mainly of fine (7--10 nm) magnetic grains physically surrounded by oxide phases, which produce magnetic isolation of the grains. As a result, the magnetic switching volume is maintained as small as the physical grain size. Consequently, ample number of magnetic switching units can be obtained in one recording bit, in other words, higher signal to noise ratios (SNR) can be achieved. Therefore, a good understanding and control of the microstructure of the films is very important for high areal density magnetic recording media. Interlayers and seedlayers play important roles in controlling the microstructure in terms of grain size, grain size distribution, oxide segregation and orientation dispersion of the crystallographic texture. Developing novel interlayers or seedlayers with smaller grain size is a key approach to produce smaller grain size in the recording layer. This study focuses on how to achieve smaller grain sizes in the recording layer through novel interlayer/seedlayer materials and processes. It also discusses the resulting microstructure in smaller-grain-size thin films. Metal + oxide (e.g. Ru + SiO2) composite thin films were chosen as interlayer and seedlayer materials due to their unique segregated microstructure. Such layers can be grown epitaxially on top of fcc metal seedlayers with good orientation. It can also provide an epitaxial growth template for the subsequent magnetic layer (recording layer). The metal and oxide phases in the composite thin films are immiscible. The final microstructure of the interlayer depends on factors, such as, sputtering pressure, oxide species, oxide volume fraction, thickness, alloy composition, temperature etc. Moreover, it has been found that the microstructure of the composite thin films is affected mostly by two important factors---oxide volume fraction and sputtering pressure. The latter affects grain size and grain segregation through surface-diffusion modification and the self-shadowing effect. The composite Ru + oxide interlayers were found to have various microstructures under various sputtering conditions. Four characteristic microstructure zones can be identified as a function of oxide volume fraction and sputtering pressure---"percolated" (A), "maze" (T), "granular" (B) and "embedded" (C), based on which, a new structural zone model (SZM) is established for composite thin films. The granular microstructure of zone B is of particular interest for recording media application. The grain size of interlayers is a strong function of pressure, oxide species and oxide volume fraction. Magnetic layers grown on top of these interlayers were found to be significantly affected by the interlayer microstructure. One-to-one grain epitaxial growth is very difficult to achieve when the grain size is too small. As a result, the magnetic properties of smaller grain size magnetic layers deteriorate due to poor growth. This presents a huge challenge to high areal density magnetic recording media. A novel approach of Ar-ion etched Ru seedlayer, which can improve epitaxy between interlayer and magnetic layer is proposed. This method produces interlayer thin films of: (1) smaller grain size and higher nucleation density due to both a rougher seedlayer surface and an oxide addition in the interlayer; (2) good (00.2) texture due to the growth on top of the low pressure deposited Ru seedlayer; (3) dome-shape grain morphology due to the high pressure deposition. Therefore, a significant Ru grain size reduction with enhanced granular morphology and improved grain-to-grain epitaxy with the magnetic layer was achieved. High resolution transmission electron microscopy (TEM) techniques, such as, electron energy loss spectroscopy (EELS), energy-filtered TEM (EFTEM), energy-dispersive X-ray spectroscopy (EDS) and mapping, and high angle annular dark field (HAADF) imaging have been utilized to investigate elemental distribution and grain morphology in composite magnetic thin films of different grain sizes. An oxygen-rich grain shell of about 0.5 ˜ 1 nm thickness is often observed for most media with different grain sizes. Reducing the grain size increases surface to volume ratio. With more surface area, smaller grains are more vulnerable to oxidization, resulting in even greater influence of the oxide on the magnetic properties of the grains.

Polynitrogen/Nanoaluminum Surface Interactions

DTIC Science & Technology

2009-05-12

atomic and molecular oxygen and of other energetic species like nitromethane (CH3NO2) with AlN(0001) and AlN )1(000 surfaces have been analyzed. 15...molecular oxygen and of other energetic species like nitromethane (CH3NO2) with AlN(0001) and AlN )1(000 surfaces have been analyzed. For these...materials. For this set of compounds we have analyzed several high explosive salts containing the CN7 - anion, namely the hydrazinium ([N2H5][CN7

The role of subchondral bone remodeling in osteoarthritis: reduction of cartilage degeneration and prevention of osteophyte formation by alendronate in the rat anterior cruciate ligament transection model.

PubMed

Hayami, Tadashi; Pickarski, Maureen; Wesolowski, Gregg A; McLane, Julia; Bone, Ashleigh; Destefano, James; Rodan, Gideon A; Duong, Le T

2004-04-01

It has been suggested that subchondral bone remodeling plays a role in the progression of osteoarthritis (OA). To test this hypothesis, we characterized the changes in the rat anterior cruciate ligament transection (ACLT) model of OA and evaluated the effects of alendronate (ALN), a potent inhibitor of bone resorption, on cartilage degradation and on osteophyte formation. Male Sprague-Dawley rats underwent ACLT or sham operation of the right knee. Animals were then treated with ALN (0.03 and 0.24 microg/kg/week subcutaneously) and necropsied at 2 or 10 weeks postsurgery. OA changes were evaluated. Subchondral bone volume and osteophyte area were measured by histomorphometric analysis. Coimmunostaining for transforming growth factor beta (TGF beta), matrix metalloproteinase 9 (MMP-9), and MMP-13 was performed to investigate the effect of ALN on local activation of TGF beta. ALN was chondroprotective at both dosages, as determined by histologic criteria and collagen degradation markers. ALN suppressed subchondral bone resorption, which was markedly increased 2 weeks postsurgery, and prevented the subsequent increase in bone formation 10 weeks postsurgery, in the untreated tibial plateau of ACLT joints. Furthermore, ALN reduced the incidence and area of osteophytes in a dose-dependent manner. ALN also inhibited vascular invasion into the calcified cartilage in rats with OA and blocked osteoclast recruitment to subchondral bone and osteophytes. ALN treatment reduced the local release of active TGF beta, possibly via inhibition of MMP-13 expression in articular cartilage and MMP-9 expression in subchondral bone. Subchondral bone remodeling plays an important role in the pathogenesis of OA. ALN or other inhibitors of bone resorption could potentially be used as disease-modifying agents in the treatment of OA.

Giant increase in piezoelectric coefficient of AlN by Mg-Nb simultaneous addition and multiple chemical states of Nb

NASA Astrophysics Data System (ADS)

Uehara, Masato; Shigemoto, Hokuto; Fujio, Yuki; Nagase, Toshimi; Aida, Yasuhiro; Umeda, Keiichi; Akiyama, Morito

2017-09-01

Aluminum nitride (AlN) is one of piezoelectric materials, which are eagerly anticipated for use in microelectromechanical systems (MEMS) applications such as communication resonators, sensors, and energy harvesters. AlN is particularly excellent in generated voltage characteristics for the MEMS rather than oxide piezoelectric materials such as lead zirconium titanate Pb(Zr, Ti)O3. However, it is necessary to improve the piezoelectric properties of AlN in order to advance the performance of the MEMS. We dramatically increased the piezoelectric coefficient d33 of AlN films by simultaneously adding magnesium (Mg) and niobium (Nb). The d33 of Mg39.3Nb25.0Al35.7N is 22 pC/N, which is about four times that of AlN. The d33 is increased by Mg and Nb simultaneous addition, and is not increased by Mg or Nb single addition. Interestingly, the Nb has multiple chemical states, and which are influenced by the Mg concentration.

Observation of stimulated emission from a single Fe-doped AlN triangular fiber at room temperature

PubMed Central

Jiang, Liangbao; Jin, Shifeng; Wang, Wenjun; Zuo, Sibin; Li, Zhilin; Wang, Shunchong; Zhu, Kaixing; Wei, Zhiyi; Chen, Xiaolong

2015-01-01

Aluminum nitride (AlN) is a well known wide-band gap semiconductor that has been widely used in fabricating various ultraviolet photo-electronic devices. Herein, we demonstrate that a fiber laser can be achieved in Fe-doped AlN fiber where Fe is the active ion and AlN fiber is used as the gain medium. Fe-doped single crystal AlN fibers with a diameter of 20–50 μm and a length of 0.5–1 mm were preparated successfully. Stimulated emission (peak at about 607 nm and FWHM ~0.2 nm) and a long luminescence lifetime (2.5 ms) were observed in the fibers by a 532nm laser excitation at room temperature. The high quality long AlN fibers are also found to be good optical waveguides. This kind of fiber lasers may possess potential advantages over traditional fiber lasers in enhancing power output and extending laser wavelengths from infrared to visible regime. PMID:26647969

The influence of point defects on the thermal conductivity of AlN crystals

NASA Astrophysics Data System (ADS)

Rounds, Robert; Sarkar, Biplab; Alden, Dorian; Guo, Qiang; Klump, Andrew; Hartmann, Carsten; Nagashima, Toru; Kirste, Ronny; Franke, Alexander; Bickermann, Matthias; Kumagai, Yoshinao; Sitar, Zlatko; Collazo, Ramón

2018-05-01

The average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations is analyzed using the 3ω method in the temperature range of 30-325 K. AlN wafers grown by physical vapor transport show significant variation in thermal conductivity at room temperature with values ranging between 268 W/m K and 339 W/m K. AlN crystals grown by hydride vapor phase epitaxy yield values between 298 W/m K and 341 W/m K at room temperature, suggesting that the same fundamental mechanisms limit the thermal conductivity of AlN grown by both techniques. All samples in this work show phonon resonance behavior resulting from incorporated point defects. Samples shown by optical analysis to contain carbon-silicon complexes exhibit higher thermal conductivity above 100 K. Phonon scattering by point defects is determined to be the main limiting factor for thermal conductivity of AlN within the investigated temperature range.

High-Temperature Electromechanical Characterization of AlN Single Crystals.

PubMed

Kim, Taeyang; Kim, Jinwook; Dalmau, Rafael; Schlesser, Raoul; Preble, Edward; Jiang, Xiaoning

2015-10-01

Hexagonal AlN is a non-ferroelectric material and does not have any phase transition up to its melting point (>2000°C), which indicates the potential use of AlN for high-temperature sensing. In this work, the elastic, dielectric, and piezoelectric constants of AlN single crystals were investigated at elevated temperatures up to 1000°C by the resonance method. We used resonators of five different modes to obtain a complete set of material constants of AlN single crystals. The electrical resistivity of AlN at elevated temperature (1000°C) was found to be greater than 5 × 10(10) Ω · cm. The resonance frequency of the resonators, which was mainly determined by the elastic compliances, decreased linearly with increasing temperature, and was characterized by a relatively low temperature coefficient of frequency, in the range of -20 to -36 ppm/°C. For all the investigated resonator modes, the elastic constants and the electromechanical coupling factors exhibited excellent temperature stability, with small variations over the full temperature range, <11.2% and <17%, respectively. Of particular significance is that due to the pyroelectricity of AlN, both the dielectric and the piezoelectric constants had high thermal resistivity even at extreme high temperature (1000°C). Therefore, high electrical resistivity, temperature independence of electromechanical properties, as well as high thermal resistivity of the elastic, dielectric, and piezoelectric properties, suggest that AlN single crystals are a promising candidate for high-temperature piezoelectric sensing applications.

Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.

PubMed

Roy, Tania; Tosun, Mahmut; Cao, Xi; Fang, Hui; Lien, Der-Hsien; Zhao, Peida; Chen, Yu-Ze; Chueh, Yu-Lun; Guo, Jing; Javey, Ali

2015-02-24

Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrier concentration of MoS2 and WSe2 layers are independently controlled by the two symmetric gates. The same device can be gate modulated to behave as either an Esaki diode with negative differential resistance, a backward diode with large reverse bias tunneling current, or a forward rectifying diode with low reverse bias current. Notably, a high gate coupling efficiency of ∼80% is obtained for tuning the interlayer band alignments, arising from weak electrostatic screening by the atomically thin layers. This work presents an advance in the fundamental understanding of the interlayer coupling and electron tunneling in semiconductor vdW heterostructures with important implications toward the design of atomically thin tunnel transistors.

Estimation of exciton reverse transfer for variable spectra and high efficiency in interlayer-based organic light-emitting devices

NASA Astrophysics Data System (ADS)

Liu, Shengqiang; Zhao, Juan; Huang, Jiang; Yu, Junsheng

2016-12-01

Organic light-emitting devices (OLEDs) with three different exciton adjusting interlayers (EALs), which are inserted between two complementary blue and yellow emitting layers, are fabricated to demonstrate the relationship between the EAL and device performance. The results show that the variations of type and thickness of EAL have different adjusting capability and distribution control on excitons. However, we also find that the reverse Dexter transfer of triplet exciton from the light-emitting layer to the EAL is an energy loss path, which detrimentally affects electroluminescent (EL) spectral performance and device efficiency in different EAL-based devices. Based on exciton distribution and integration, an estimation of exciton reverse transfer is developed through a triplet energy level barrier to simulate the exciton behavior. Meanwhile, the estimation results also demonstrate the relationship between the EAL and device efficiency by a parameter of exciton reverse transfer probability. The estimation of exciton reverse transfer discloses a crucial role of the EALs in the interlayer-based OLEDs to achieve variable EL spectra and high efficiency.

Effect of Brass Interlayer Sheet on Microstructure and Joint Performance of Ultrasonic Spot-Welded Copper-Steel Joints

NASA Astrophysics Data System (ADS)

Satpathy, Mantra Prasad; Kumar, Abhishek; Sahoo, Susanta Kumar

2017-07-01

Solid-state ultrasonic spot welding (USW) inevitably offers a potential solution for joining dissimilar metal combination like copper (Cu) and steel (SS). In this study, the USW has been performed on Cu (UNS C10100) and SS (AISI 304) with brass interlayer by varying various welding parameters, aiming to identify the interfacial reaction, changes in microstructure and weld strength. The highest tensile shear and T-peel failure loads of 1277 and 174 N are achieved at the optimum conditions like 68 µm of vibration amplitude, 0.42 MPa of weld pressure and 1 s of weld time. The fractured surface analysis of brass interlayer and AISI 304 stainless steel samples reveals the features like swirls, voids and intermetallic compounds (IMCs). These IMCs are composed of CuZn and FeZn composite-like structures with 1.0 μm thickness. This confirms that the weld quality is specifically sensitive to the levels of input parameter combinations as well as the type of material present on the sonotrode side.

Partial Transient Liquid-Phase Bonding, Part II: A Filtering Routine for Determining All Possible Interlayer Combinations

NASA Astrophysics Data System (ADS)

Cook, Grant O.; Sorensen, Carl D.

2013-12-01

Partial transient liquid-phase (PTLP) bonding is currently an esoteric joining process with limited applications. However, it has preferable advantages compared with typical joining techniques and is the best joining technique for certain applications. Specifically, it can bond hard-to-join materials as well as dissimilar material types, and bonding is performed at comparatively low temperatures. Part of the difficulty in applying PTLP bonding is finding suitable interlayer combinations (ICs). A novel interlayer selection procedure has been developed to facilitate the identification of ICs that will create successful PTLP bonds and is explained in a companion article. An integral part of the selection procedure is a filtering routine that identifies all possible ICs for a given application. This routine utilizes a set of customizable parameters that are based on key characteristics of PTLP bonding. These parameters include important design considerations such as bonding temperature, target remelting temperature, bond solid type, and interlayer thicknesses. The output from this routine provides a detailed view of each candidate IC along with a broad view of the entire candidate set, greatly facilitating the selection of ideal ICs. This routine provides a new perspective on the PTLP bonding process. In addition, the use of this routine, by way of the accompanying selection procedure, will expand PTLP bonding as a viable joining process.

Interlayer-Expanded Metal Sulfides on Graphene Triggered by a Molecularly Self-Promoting Process for Enhanced Lithium Ion Storage.

PubMed

Wang, Qingqing; Rui, Kun; Zhang, Chao; Ma, Zhongyuan; Xu, Jingsan; Sun, Wenping; Zhang, Weina; Zhu, Jixin; Huang, Wei

2017-11-22

A general synthetic approach has been demonstrated to fabricate three-dimensional (3D) structured metal sulfides@graphene, employing few-layered sulfide nanostructures with expanded interlayer spacing of the (002) plane (e.g., 0.98 nm for MoS 2 nanoclusters and 0.65 nm for VS 4 nanoribbons) and electrically conductive graphene as ideal building blocks. Here, small molecules (thioacetamide) acting as both the sulfur source and, more importantly, the structure-directing agent adjusting the interlayer spacing are wisely selected, further contributing to a sufficient space for ultrafast Li + ion intercalation. The appealing features of a mechanically robust backbone, ultrathin thickness, abundant exposure of interlayer edges, and good electrical conductivity in such 3D architectures are favorable for providing easy access for the electrolyte to the structures and offering a shortened diffusion length of Li + when utilized for energy storage. As a proof of concept, the electrochemical behavior of the resulting 3D structured metal sulfides@graphene as an anode material of lithium ion batteries (LIBs) is systematically investigated. As a consequence, high specific capacities, long lifespans, and superior rate capabilities have been realized in such well-designed architectures, e.g. maintaining a specific capacity as high as 965 mAh g -1 for 120 cycles for VS 4 @graphene and 1100 mAh g -1 for 150 cycles for MoS 2 @graphene.

Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

NASA Astrophysics Data System (ADS)

Wu, Hualong; Wang, Hailong; Chen, Yingda; Zhang, Lingxia; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

2018-05-01

The crystalline quality of AlN epitaxial layers on sapphire substrates was improved by introducing trimethylgallium (TMGa) pulse flow into the growth of AlN nucleation layers. It was found that the density of both screw- and edge-type threading dislocations could be significantly reduced by introducing the TMGa pulse flow. With increasing TMGa pulse flow times, the lateral correlation length (i.e. the grain size) increases and the strain in the AlN epilayers changes from tensile state to compressive state. Unstrained AlN with the least dislocations and a smooth surface was obtained by introducing 2-times TMGa pulse flow. The crystalline improvement is attributed to enhanced lateral growth and improved crystalline orientation by the TMGa pulse flow.

Solar-Blind Photodetectors for Harsh Electronics

PubMed Central

Tsai, Dung-Sheng; Lien, Wei-Cheng; Lien, Der-Hsien; Chen, Kuan-Ming; Tsai, Meng-Lin; Senesky, Debbie G.; Yu, Yueh-Chung; Pisano, Albert P.; He, Jr-Hau

2013-01-01

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments. PMID:24022208

Interface reactions between silicon carbide and interlayers in silicon carbide copper metal matrix composites

NASA Astrophysics Data System (ADS)

Köck, T.; Brendel, A.; Bolt, H.

2007-05-01

Novel copper matrix composites reinforced with silicon carbide fibres are considered as a new generation of heat sink materials for the divertor of future fusion reactors. The divertor is exposed to intense particle bombardment and heat loads of up to 15 MW m-2. This component consists of the plasma-facing material which is bonded to the actively cooled heat sink. Due to its high thermal conductivity of about 400 W m-1 K-1 copper is a promising material for the heat sink. To increase the mechanical properties of copper at working temperature (823 K), silicon carbide fibres with a diameter of 140 μm are used to reinforce the interface area between the plasma-facing material and the heat sink. Push-out tests show that the adhesion between SiC fibre and Cu matrix without any interlayer is very low. To increase the fibre-matrix bonding the fibres are coated with Cr and W with a thickness of 300-400 nm before Cu deposition by magnetron sputtering. Push-out tests on these modified fibres show a significant increase in adhesion compared to the fibres without interlayer. XRD investigations after a heat treatment at 923 K show a chromium carbide (Cr23C6, Cr3C2) formation and the absence of chromium silicides. In the case of a W interlayer a W2C formation is detected and also no tungsten silicides. Single-fibre tensile tests were performed to investigate the influence of the reaction zone on the ultimate tensile strength of the fibres. The ultimate tensile strength for fibres without interlayer remains constant at about 2200 MPa after annealing at 923 K. The fibres with chromium and tungsten interlayers, respectively, show a decrease of about 30% of the ultimate tensile strength after the heat treatment at 923 K.

Braze Process Optimization Involving Conventional Metal/Ceramic Brazing with 50Au-50Cu Alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

MALIZIA JR.,LOUIS A.; MEREDITH,KEITH W.; APPEL,DANIEL B.

1999-12-15

Numerous process variables can influence the robustness of conventional metal/ceramic brazing processes. Experience with brazing of hermetic vacuum components has identified the following parameters as influencing the outcome of hydrogen furnace brazed Kovar{trademark} to metallized alumina braze joints: (a) Mo-Mn metallization thickness, sinter fire temperature and porosity (b) Nil plate purity, thickness, and sinter firing conditions (c) peak process temperature, time above liquidus and (d) braze alloy washer thickness. ASTM F19 tensile buttons are being used to investigate the above parameters. The F19 geometry permits determination of both joint hermeticity and tensile strength. This presentation will focus on important lessonsmore » learned from the tensile button study: (A) the position of the Kovar{trademark} interlayer can influence the joint tensile strength achieved--namely, off-center interlayers can lead to residual stress development in the ceramic and degrade tensile strength values. Finite element analysis has been used to demonstrate the expected magnitude in strength degradation as a function of misalignment. (B) Time above liquidus (TAL) and peak temperature can influence the strength and alloying level of the resulting braze joint. Excessive TAL or peak temperatures can lead to overbraze conditions where all of the Ni plate is dissolved. (C) Metallize sinter fire processes can influence the morphology and strength obtained from the braze joints.« less

Special Features of the Structure of Laser-Welded Joints of Dissimilar Alloys Based on Titanium and Aluminum

NASA Astrophysics Data System (ADS)

Nikulina, A. A.; Smirnov, A. I.; Turichin, G. A.; Klimova-Korsmik, O. G.; Babkin, K. D.

2017-11-01

The structure of laser-welded joints of parts having different thicknesses fabricated from alloys based on aluminum and titanium has been studied. Results of transmission and scanning electron microscopy measurements and x-ray diffraction analysis show that the diffusion interaction of microvolumes of two alloys in the weld leads to the formation of two interlayers: (i) a continuous intermetallic TiAl layer with thickness below 1 μm adjacent to the titanium alloy and (ii) a layer consisting of TiAl3 intermetallic dendrites with thickness of 2 - 6 μm adjacent to the TiAl layer. The average microhardness of the intermetallic layer is about 490 HV.

All high Tc edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

NASA Technical Reports Server (NTRS)

Hunt, B. D.; Foote, M. C.; Bajuk, L. J.

1991-01-01

High quality YBa2Cu3O(7-x) normal-metal/YBa2Cu3O(7-x) edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100 A thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective mormal metal coherence length of 20 A.

The Effect of Cooling Conditions on the Evolution of Non-metallic Inclusions in High Manganese TWIP Steels

NASA Astrophysics Data System (ADS)

Wang, Yu-Nan; Yang, Jian; Xin, Xiu-Ling; Wang, Rui-Zhi; Xu, Long-Yun

2016-04-01

In the present study, the effect of cooling conditions on the evolution of non-metallic inclusions in high manganese TWIP steels was investigated based on experiments and thermodynamic calculations. In addition, the formation and growth behavior of AlN inclusions during solidification under different cooling conditions were analyzed with the help of thermodynamics and dynamics. The inclusions formed in the high manganese TWIP steels are classified into nine types: (1) AlN; (2) MgO; (3) CaS; (4) MgAl2O4; (5) AlN + MgO; (6) MgO + MgS; (7) MgO + MgS + CaS; (8) MgO + CaS; (9) MgAl2O4 + MgS. With the increase in the cooling rate, the volume fraction and area ratio of inclusions are almost constant; the size of inclusions decreases and the number density of inclusions increases in the steels. The thermodynamic results of inclusion types calculated with FactSage are consistent with the observed results. With increasing cooling rate, the diameter of AlN decreases. When the cooling rate increases from 0.75 to 4.83 K s-1, the measured average diameter of AlN decreases from 4.49 to 2.42 μm. Under the high cooling rate of 4.83 K s-1, the calculated diameter of AlN reaches 3.59 μm at the end of solidification. However, the calculated diameter of AlN increases to approximately 5.93 μm at the end of solidification under the low cooling rate of 0.75 K s-1. The calculated diameter of AlN decreases with increasing cooling rate. The theoretical calculation results of the change in diameter of AlN under the different cooling rates have the same trend with the observed results. The existences of inclusions in the steels, especially AlN which average sizes are 2.42 and 4.49 μm, respectively, are not considered to have obvious influences on the hot ductility.

Do estrogen and alendronate improve metaphyseal fracture healing when applied as osteoporosis prophylaxis?

PubMed

Kolios, Leila; Hoerster, Ann Kristin; Sehmisch, Stephan; Malcherek, Marie Christin; Rack, Thomas; Tezval, Mohammed; Seidlova-Wuttke, Dana; Wuttke, Wolfgang; Stuermer, Klaus Michael; Stuermer, Ewa Klara

2010-01-01

Osteoporosis is accompanied by predominantly metaphyseal fractures with a delayed and qualitatively reduced healing process. This study addressed the question of whether fracture healing in the context of osteoporosis prophylaxis is improved with estrogen (E) or alendronate (ALN). Thirty-six ovariectomized and 12 sham-operated 12-week-old rats received soy-free (osteoporotic C, sham), E-, or ALN- supplemented diets. After 10 weeks, a metaphyseal tibia osteotomy and standardized T-plate fixation were performed. After a 5-week healing process, the fracture callus was evaluated qualitatively by biomechanical bending test and quantitatively in microradiographic sections. The time course of callus formation was examined using fluorochrome-labeled histological sections. Administration of E improved the biomechanical properties of callus (stiffness [N/mm]: sham: 110.2 + or - 76.07, C: 41.28 + or - 33.70, E: 85.72 + or - 47.24, ALN: 72.07 + or - 34.68). The resistance to microfracturing seen in E-treated animals was significantly enhanced and even superior to sham (yield load [N] sham: 27.44 + or - 9.72, C: 21.04 + or - 12.47, E: 42.85 + or - 13.74(Delta), ALN: 25.28 + or - 6.4(.)) (* P < 0.05 vs. sham group, (Delta) P < 0.05 vs. C group, (*) P < 0.05 vs. E group). Trabecular bone in particular was improved, indicating the presence of physiological endosteal bridging (Tr.Dn [%] sham: 10.53 + or - 18.9, C: 1.01 + or - 0.14, E: 24.13 + or - 34.09(Delta), ALN: 3.99 + or - 8.3(.)). ALN did not help bone healing, as shown by mechanical tests. Compared to the C group, statistically, ALN did not show worse properties. The induction of callus formation under ALN treatment was slightly delayed (Tt.Cl [mm(2)] sham: 3.68 + or - 0.66, C: 3.44 + or - 0.42, E: 3.69 + or - 0.58, ALN: 3.06 + or - 0.56). Osteoporotic metaphyseal fracture healing was qualitatively and quantitatively improved by E prophylaxis. The process of fracture healing occurred nearly physiologically (shamlike). Notably, ALN hardly improved metaphyseal callus properties when assessed as osteoporosis prophylaxis, but to a lesser extent than E.

Ultra-thin grain-oriented silicon steel sheet fabricated by a novel way: Twin-roll strip casting and two-stage cold rolling

NASA Astrophysics Data System (ADS)

Wang, Yin-Ping; Liu, Hai-Tao; Song, Hong-Yu; Liu, Jia-Xin; Shen, Hui-Ying; Jin, Yang; Wang, Guo-Dong

2018-04-01

0.05-0.15 mm-thick ultra-thin grain-oriented silicon steel sheets were successfully produced by a novel processing route including strip casting, hot rolling, normalizing, two-stage cold rolling with intermediate annealing, primary recrystallization annealing and secondary recrystallization annealing. The evolutions of microstructure, texture and inhibitor along the processing were briefly investigated. The results showed that the initial Goss orientation originated due to the heterogenous nucleation of δ-ferrite grains during solidification. Because of the lack of shear deformation, only a few Goss grains were observed in the hot rolled sheet. After the first cold rolling and intermediate annealing, Goss texture was enhanced and distributed in the whole thickness. A small number of Goss grains having a high fraction of high energy boundaries exhibited in the primary recrystallization annealed sheet. A large number of fine and dispersed MnS and AlN and a few co-precipitates MnS and AlN with the size range of 10-70 nm were also observed. Interestingly, a well-developed secondary recrystallization microstructure characterized by 10-60 mm grains and a sharp Goss texture were finally produced in the 0.05-0.15 mm-thick ultra-thin sheets. A magnetic induction B8 of 1.72-1.84 T was obtained. Another new finding was that a few {2 3 0}〈0 0 1〉 and {2 1 0}〈1 2 7〉 grains also can grow up abnormally because of the high fraction of high energy boundaries and the size and number advantage, respectively. These non-Goss grains finally deteriorated the magnetic properties of the ultra-thin sheets. In addition, low surface energies of {hk0} planes may also contribute to the abnormal growth of Goss, {2 3 0}〈0 0 1〉 and {2 1 0}〈1 2 7〉 grains.

Compound formation and melting behavior in the AB compound and rare earth oxide systems

NASA Astrophysics Data System (ADS)

Huang, Z. K.; Yan, D. S.; Yen, T. S.; Tien, T. Y.

1990-03-01

Compound formation in the systems of the covalent compounds BeO, AlN, and SiC with R2O 3(rare earth oxides) is described. Tentative phase diagrams of the AlN sbnd Nd 2O 3 and AlN sbnd Eu 2O 3 systems are presented.

Flexible and transparent polyimide films containing two-dimensional alumina nanosheets templated by graphene oxide for improved barrier property.

PubMed

Tseng, I-Hsiang; Tsai, Mei-Hui; Chung, Chi-Wei

2014-08-13

Unique two-dimensional alumina nanosheets (Alns) using graphene oxide (GO) as templates are fabricated and successfully incorporated with organo-soluble polyimide (PI) to obtain highly transparent PI nanocomposite films with improved moisture barrier property. The effects of filler types and contents on water vapor transmission rate (WVTR) and transparency of PI are systematically studied. The hydroxyl groups on GO react with aluminum isopropoxide via sol-gel process to obtain alumina coverd-GO (Al-GO), and then thermal decomposition is applied to obtain Alns. Alns are the most efficient fillers among others to restrict the diffusion of water vapor within PI matrix and simultaneously maintain the transparency of PI. XRD pattern, TEM, and AFM images confirm the sheet-like morphology of Alns with ultrahigh aspect ratio. With only 0.01 wt % of Alns, the PI nanocomposite film exhibits the most significant reduction of 95% in WVTR as compared to that of pure PI film. Most importantly, the resultant PI/Alns-0.01 film exhibits excellent optical transparency and high mechanical strength and great thermal stability.

On the kinetics of transgranular particle embrittlement during simulated carburizing in steel containing grain-refining additions of aluminum and niobium plus aluminum

DOE PAGES

Leap, Michael Jerald

2017-08-31

Here, the kinetics of toughness degradation resulting from transgranular particle embrittlement are evaluated as a function of composition and processing history for simulated carburizing operations in air-melt steel containing grain-refining additions of aluminum and aluminum plus niobium. The kinetics of particle embrittlement are inherently linked to the ripening of AlN precipitates after extended austenitization in steel containing carbon contents representative of both the case and core of a carburized component. Embrittlement in steel containing AlN occurs with an activation energy similar to the value for aluminum diffusion in austenite, although an AlN volume fraction effect on the embrittlement kinetics ismore » manifested as decreases in activation energy with decreases in the [Al]/[N] ratio of steel. In contrast, the presence of niobium substantially retards the kinetics of particle embrittlement in steel containing 120–200 ppm N. Observations of AlN precipitates coated with Nb(C,N) indicate that the decreases in embrittlement kinetics are related to a reduction in the potential for AlN ripening during austenitization.« less

Helical Growth of Aluminum Nitride: New Insights into Its Growth Habit from Nanostructures to Single Crystals

PubMed Central

Zhang, Xing-Hong; Shao, Rui-Wen; Jin, Lei; Wang, Jian-Yu; Zheng, Kun; Zhao, Chao-Liang; Han, Jie-Cai; Chen, Bin; Sekiguchi, Takashi; Zhang, Zhi; Zou, Jin; Song, Bo

2015-01-01

By understanding the growth mechanism of nanomaterials, the morphological features of nanostructures can be rationally controlled, thereby achieving the desired physical properties for specific applications. Herein, the growth habits of aluminum nitride (AlN) nanostructures and single crystals synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport process were investigated by transmission electron microscopy. The detailed structural characterizations strongly suggested that the growth of AlN nanostructures including AlN nanowires and nanohelixes follow a sequential and periodic rotation in the growth direction, which is independent of the size and shape of the material. Based on these experimental observations, an helical growth mechanism that may originate from the coeffect of the polar-surface and dislocation-driven growth is proposed, which offers a new insight into the related growth kinetics of low-dimensional AlN structures and will enable the rational design and synthesis of novel AlN nanostructures. Further, with the increase of temperature, the growth process of AlN grains followed the helical growth model. PMID:25976071

Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

PubMed Central

Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

2015-01-01

Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m-2 and 0.9±0.1 C m-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported. PMID:26193701

On the kinetics of transgranular particle embrittlement during simulated carburizing in steel containing grain-refining additions of aluminum and niobium plus aluminum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leap, Michael Jerald

Here, the kinetics of toughness degradation resulting from transgranular particle embrittlement are evaluated as a function of composition and processing history for simulated carburizing operations in air-melt steel containing grain-refining additions of aluminum and aluminum plus niobium. The kinetics of particle embrittlement are inherently linked to the ripening of AlN precipitates after extended austenitization in steel containing carbon contents representative of both the case and core of a carburized component. Embrittlement in steel containing AlN occurs with an activation energy similar to the value for aluminum diffusion in austenite, although an AlN volume fraction effect on the embrittlement kinetics ismore » manifested as decreases in activation energy with decreases in the [Al]/[N] ratio of steel. In contrast, the presence of niobium substantially retards the kinetics of particle embrittlement in steel containing 120–200 ppm N. Observations of AlN precipitates coated with Nb(C,N) indicate that the decreases in embrittlement kinetics are related to a reduction in the potential for AlN ripening during austenitization.« less

Lithium and sodium adsorption properties of two-dimensional aluminum nitride

NASA Astrophysics Data System (ADS)

Sengupta, Amretashis

2018-09-01

In this work the lithiation and sodiation properties of 2-dimensional (2D) AlN sheets are studied from density functional theory (DFT) simulations. 2D AlN showed theoretical specific capacity of 500.8 and 385.3 mA h g-1, maximum open circuit voltage of 1.49 and 1.86 V and diffusion barriers 0.40 and 0.15 eV, for Li and Na adsorption respectively. The calculations show 2D AlN as a possible alternative as anode material in Li-ion and Na-ion batteries. Further the high specific capacity and small diffusion barriers for Na atoms can make 2D AlN useful in supercapacitors. The change in carrier transport properties due to Li/Na adsorption on monolayer AlN can also be useful in chemical/bio-sensors and nanoelectronics devices.

Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications

NASA Astrophysics Data System (ADS)

Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Stöger-Pollach, M.; Artner, W.; Hradil, K.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

2018-03-01

Aluminum nitride (AlN) on sapphire has been investigated with two different pretreatments prior to sputter deposition of the AlN layer to improve the orientation and homogeneity of the thin film. An inverse sputter etching of the substrate in argon atmosphere results in an improvement of the uniformity of the alignment of the AlN grains and hence, in enhanced electro-mechanical AlN film properties. This effect is demonstrated in the raw measurements of SAW test devices. Additionally, the impulse response of several devices shows that a poor AlN thin film layer quality leads to a higher signal damping during the transduction of energy in the inter-digital transducers. As a result, the triple-transit signal cannot be detected at the receiver.

Formation of atomically smooth epitaxial metal films on a chemically reactive interface: Mg on Si(111)

NASA Astrophysics Data System (ADS)

Özer, Mustafa M.; Weitering, Hanno H.

2013-07-01

Deposition of Mg on Si(111)7 × 7 produces an epitaxial magnesium silicide layer. Under identical annealing conditions, the thickness of this Mg2Si(111) layer increases with deposition amount, reaching a maximum of 4 monolayer (ML) and decreasing to ˜3 ML at higher Mg coverage. Excess Mg coalesces into atomically flat, crystalline Mg(0001) films. This surprising growth mode can be attributed to the accidental commensurability of the Mg(0001), Si(111), and Mg2Si(111) interlayer spacing and the concurrent minimization of in-plane Si mass transfer and domain-wall energies. The commensurability of the interlayer spacing defines a highly unique solid-phase epitaxial growth process capable of producing trilayer structures with atomically abrupt interfaces and atomically smooth surface morphologies.

Laser induced THz emission from femtosecond photocurrents in Co/ZnO/Pt and Co/Cu/Pt multilayers

NASA Astrophysics Data System (ADS)

Li, G.; Mikhaylovskiy, R. V.; Grishunin, K. A.; Costa, J. D.; Rasing, Th; Kimel, A. V.

2018-04-01

The ultrashort laser excitation of Co/Pt magnetic heterostructures can effectively generate spin and charge currents at the interfaces between magnetic and nonmagnetic layers. The direction of these photocurrents can be controlled by the helicity of the circularly polarized laser light and an external magnetic field. Here, we employ THz time-domain spectroscopy to investigate further the role of interfaces in these photo-galvanic phenomena. In particular, the effects of either Cu or ZnO interlayers on the photocurrents in Co/X/Pt (X  =  Cu, ZnO) have been studied by varying the thickness of the interlayers up to 5 nm. The results are discussed in terms of spin-diffusion phenomena and interfacial spin-orbit torque.

On Practical Charge Injection at the Metal/Organic Semiconductor Interface

PubMed Central

Kumatani, Akichika; Li, Yun; Darmawan, Peter; Minari, Takeo; Tsukagoshi, Kazuhito

2013-01-01

We have revealed practical charge injection at metal and organic semiconductor interface in organic field effect transistor configurations. We have developed a facile interface structure that consisted of double-layer electrodes in order to investigate the efficiency through contact metal dependence. The metal interlayer with few nanometers thickness between electrode and organic semiconductor drastically reduces the contact resistance at the interface. The improvement has clearly obtained when the interlayer is a metal with lower standard electrode potential of contact metals than large work function of the contact metals. The electrode potential also implies that the most dominant effect on the mechanism at the contact interface is induced by charge transfer. This mechanism represents a step forward towards understanding the fundamental physics of intrinsic charge injection in all organic devices. PMID:23293741

Origin and effective reduction of inversion domains in aluminum nitride grown by a sublimation method

NASA Astrophysics Data System (ADS)

Shigetoh, Keisuke; Horibuchi, Kayo; Nakamura, Daisuke

2017-11-01

Owing to the large differences in the chemical properties between Al and N polarities in aluminum nitride (AlN), the choice of the polar direction for crystal growth strongly affects not only the quality but also the shape (facet formation) of the grown crystal. In particular, N-polar (0 0 0 -1) has been considered to be a more preferable direction than Al-polar (0 0 0 1) for sublimation growth because compared to Al-polar (0 0 0 1), N-polar (0 0 0 -1) exhibits better stability at high growth rate (high supersaturation) conditions and enables easier lateral enlargement of the crystal. However, some critical growth conditions induce polarity inversion and hinder stable N-polar growth. Furthermore, the origin of the polarity inversion in AlN growth by the sublimation method is still unclear. To ensure stable N-polar growth without polarity inversion, the formation mechanism of the inversion domain during AlN sublimation growth must be elucidated. Therefore, herein, we demonstrate homoepitaxial growth on an N-polar seed and carefully investigate the obtained crystal that shows polarity inversion. Annular bright-field scanning transmission electron microscopy reveals that polarity is completely converted to the Al polarity via the formation of a 30 nm thick mixed polar layer (MPL) just above the seed. Moreover, three-dimensional atom probe tomography shows the segregation of the oxygen impurities in the MPL with a high concentration of about 3 atom%. Finally, by avoiding the incorporation of oxygen impurity into the crystal at the initial stage of the growth, we demonstrate an effective reduction (seven orders of magnitude) of the inversion domain boundary formation.

Protection from high-velocity impact particles for quartz glass by coatings on the basis of Al-Si-N

NASA Astrophysics Data System (ADS)

Bozhko, I. A.; Rybalko, E. V.; Fedorischeva, M. V.; Solntsev, V. L.; Cherniavsky, A. G.; Kaleri, A. Yu.; Psakhie, S. G.; Sergeev, V. P.

2016-11-01

The paper presents the results of the research of the phase composition and the mechanical properties of the coatings on the basis of Al-Si-N system produced by pulsed magnetron sputtering on the KV glass substrates. By the X-ray diffraction method, it has been discovered that the coatings contain AlN phase (hcp) with different thickness. The deposition of Al-Si-N coating system allows both increasing the microhardness of the surface layer of the quartz glass up to 29 GPa, and maintaining high elastic properties (We > 0.70). The laboratory tests have been carried out involving the impact of high-speed flows of iron particles on the Al-Si-N protective coating with different thicknesses produced by pulsed magnetron sputtering. The increase of Al-Si-N coating thickness from 1µm to 10µm decreases 4-fold the surface density of the craters on the samples caused by a high-speed flow of iron particles.

Chemical and Electrochemical Processing of Aluminum Dross Using Molten Salts

NASA Astrophysics Data System (ADS)

Yan, Xiao Y.

2008-04-01

A novel molten salt process was investigated, where Al, as metal or contained in Al2O3 and AlN, was recovered from Al dross by chemical or direct electrochemical reduction in electrolytic cells. Electrolysis experiments were carried out under argon at temperatures from 1123 to 1243 K. In order to better understand the reduction behavior, the as-received Al dross was simulated using simplified systems, including pure Al2O3, pure AlN, an Al2O3/AlN binary mixture, and an Al2O3/AlN/Al ternary mixture. The reduction of the as-received dross was also studied experimentally. The studies showed that solid Al2O3 was chemically reduced by the Ca in a Ca-saturated Ca-CaCl2 melt to form Al2Ca or electrochemically reduced to Al-rich Al-Ca alloys and that the Al value in the Al2O3 was easily recovered from the Al drosses. It was found experimentally that solid AlN in the drosses could not be calciothermically reduced to any extent, consistent with thermodynamic evaluations. It was also found that the direct electrochemical reduction of the AlN in the drosses was confined to three phase boundaries (3PBs) between the AlN, the electrolyte, and the current collector and could not be enhanced by using the LiCl-containing chloride melt or the chloride-fluoride melts studied. The presence of Al powder in the Al2O3/AlN mixture facilitated the direct electrochemical reduction of both Al2O3 and AlN. The reduction mechanisms are discussed based upon the present experimental observations. Flow sheets for recovering the metallic Al and the Al in the Al2O3 and AlN from Al dross are finally proposed.

The use of aluminum nitride to improve Aluminum-26 Accelerator Mass Spectrometry measurements and production of Radioactive Ion Beams

DOE PAGES

Janzen, Meghan S.; Galindo-Uribarri, Alfredo; Liu, Yuan; ...

2015-06-29

In this paper, we present results and discuss the use of aluminum nitride as a promising source material for Accelerator Mass Spectrometry (AMS) and Radioactive Ion Beams (RIBs) science applications of 26Al isotopes. The measurement of 26Al in geological samples by AMS is typically conducted on Al 2O 3 targets. However, Al 2O 3 is not an ideal source material because it does not form a prolific beam of Al - required for measuring low-levels of 26Al. Multiple samples of aluminum oxide (Al 2O 3), aluminum nitride (AlN), mixed Al 2O 3–AlN as well as aluminum fluoride (AlF 3) weremore » tested and compared using the ion source test facility and the stable ion beam (SIB) injector platform at the 25-MV tandem electrostatic accelerator at Oak Ridge National Laboratory. Negative ion currents of atomic and molecular aluminum were examined for each source material. It was found that pure AlN targets produced substantially higher beam currents than the other materials and that there was some dependence on the exposure of AlN to air. The applicability of using AlN as a source material for geological samples was explored by preparing quartz samples as Al 2O 3 and converting them to AlN using a carbothermal reduction technique, which involved reducing the Al 2O 3 with graphite powder at 1600°C within a nitrogen atmosphere. The quartz material was successfully converted to AlN. Thus far, AlN proves to be a promising source material and could lead towards increasing the sensitivity of low-level 26Al AMS measurements. In conclusion, the potential of using AlN as a source material for nuclear physics is also very promising by placing 26AlN directly into a source to produce more intense radioactive beams of 26Al.« less

Effects of long-term alendronate treatment on postmenopausal osteoporosis bone material properties.

PubMed

Hassler, N; Gamsjaeger, S; Hofstetter, B; Brozek, W; Klaushofer, K; Paschalis, E P

2015-01-01

Raman microspectroscopic analysis of iliac crest from patients that were treated with alendronate (ALN) for 10 years revealed minimal, transient alterations in bone material properties confined to actively forming bone surfaces compared to patients that were on ALN for 5 years. These changes were not encountered in the bulk tissue. Alendronate (ALN) and other bisphosphonates (BPs) are the most widely prescribed therapy for postmenopausal osteoporosis. Despite their overall excellent safety record and efficacy in reducing fractures, questions have been raised regarding potential detrimental effects that may be related to prolonged bone turnover reduction, although no definite cause-effect relationship has been established to date. The purpose of the present study was to evaluate bone material properties in patients that were receiving ALN for 5 or 10 years. Raman microspectroscopic analysis was used to analyze iliac crest biopsies from postmenopausal women with osteoporosis who had been treated with ALN for 5 years and were then re-randomized to placebo (PBO, N = 14), 5 mg/day ALN (N = 10), or 10 mg/day ALN (N = 6) for another 5 years. The parameters monitored and expressed as a function of tissue age were (i) the mineral/matrix ratio (MM), (ii) the relative proteoglycan content (PG), (iii) the relative lipid content (LPD), (iv) the mineral maturity/crystallinity (MMC), and (v) the relative pyridinoline content (PYD). The obtained data indicate that 10-year ALN use results in minimal, transient bone tissue composition changes compared to use for 5 years, confined to actively forming trabecular surfaces, implying potential differences in bone matrix maturation that nevertheless did not result in differences of these values in bulk tissue. The data suggest that prolonged reduction in bone turnover during 10 years of therapy with ALN by itself is unlikely to be associated with adverse effects on bone material properties.

Defect characterization of MOCVD grown AlN/AlGaN films on sapphire substrates by TEM and TKD

NASA Astrophysics Data System (ADS)

O'Connell, J. H.; Lee, M. E.; Westraadt, J.; Engelbrecht, J. A. A.

2018-04-01

High resolution transmission electron microscopy (TEM) has been used to characterize defects structures in AlN/AlGaN epilayers grown by metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire (Al2O3) substrates. The AlN buffer layer was shown to be epitaxially grown on the sapphire substrate with the two lattices rotated relatively through 30°. The AlN layer had a measured thickness of 20-30 nm and was also shown to contain nano-sized voids. The misfit dislocations in the buffer layer have been shown to be pure edge with a spacing of 1.5 nm. TEM characterization of the AlGaN epilayers was shown to contain a higher than expected threading dislocation density of the order 1010 cm-2 as well as the existence of "nanopipes". TEM analysis of the planar lamella for AlGaN has presented evidence for the possibility of columnar growth. The strain and misorientation mapping in the AlGaN epilayer by transmission Kikuchi diffraction (TKD) using the FIB lamella has also been demonstrated to be complimentary to data obtained by TEM imaging.

Surface damage of thin AlN films with increased oxygen content by nanosecond and femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Gruzdev, Vitaly; Salakhutdinov, Ildar; Chen, J. K.; Danylyuk, Yuriy; McCullen, Erik; Auner, Gregory

2009-10-01

AlN films deposited on sapphire substrates were damaged by single UV nanosecond (at 248 nm) and IR femtosecond (at 775 nm) laser pulses in air at normal pressure. The films had high (27-35 atomic %) concentration of oxygen introduced into thin surface layer (5-10 nm thickness). We measured damage threshold and studied morphology of the damage sites with atomic force and Nomarski optical microscopes with the objective to determine a correlation between damage processes and oxygen content. The damage produced by nanosecond pulses was accompanied by significant thermal effects with evident signatures of melting, chemical modification of the film surface, and specific redistribution of micro-defect rings around the damage spots. The nanosecond-damage threshold exhibited pronounced increase with increase of the oxygen content. In contrast to that, the femtosecond pulses produced damage without any signs of thermal, thermo-mechanical or chemical effects. No correlation between femtosecond-damage threshold and oxygen content as well as presence of defects within the laser-damage spot was found. We discuss the influence of the oxygen contamination on film properties and related mechanisms responsible for the specific damage effects and morphology of the damage sites observed in the experiments.

On the hole accelerator for III-nitride light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn

2016-04-11

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-Al{sub x}Ga{sub 1−x}N heterojunction) with different designs, including the AlN composition in the p-Al{sub x}Ga{sub 1−x}N layer, and the thickness for the p-GaN layer and the p-Al{sub x}Ga{sub 1−x}N layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-Al{sub x}Ga{sub 1−x}N layer increases. Meanwhile, with p-GaN layer or p-Al{sub x}Ga{sub 1−x}N layer thickening, the energy that themore » holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-Al{sub x}Ga{sub 1−x}N design, and the hole accelerator can effectively increase the hole injection if properly designed.« less

Ti, Al and N adatom adsorption and diffusion on rocksalt cubic AlN (001) and (011) surfaces: Ab initio calculations

NASA Astrophysics Data System (ADS)

Mastail, C.; David, M.; Nita, F.; Michel, A.; Abadias, G.

2017-11-01

We use ab initio calculations to determine the preferred nucleation sites and migration pathways of Ti, Al and N adatoms on cubic NaCl-structure (B1) AlN surfaces, primary inputs towards a further thin film growth modelling of the TiAlN alloy system. The potential energy landscape is mapped out for both metallic species and nitrogen adatoms for two different AlN surface orientations, (001) and (110), using density functional theory. For all species, the adsorption energies on AlN(011) surface are larger than on AlN(001) surface. Ti and Al adatom adsorption energy landscapes determined at 0 K by ab initio show similar features, with stable binding sites being located in, or near, epitaxial surface positions, with Ti showing a stronger binding compared to Al. In direct contrast, N adatoms (Nad) adsorb preferentially close to N surface atoms (Nsurf), thus forming strong N2-molecule-like bonds on both AlN(001) and (011). Similar to N2 desorption mechanisms reported for other cubic transition metal nitride surfaces, in the present work we investigate Nad/Nsurf desorption on AlN(011) using a drag calculation method. We show that this process leaves a Nsurf vacancy accompanied with a spontaneous surface reconstruction, highlighting faceting formation during growth.

Prediction of the electron redundant SinNn fullerenes

NASA Astrophysics Data System (ADS)

Yang, Huihui; Song, Yan; Zhang, Yan; Chen, Hongshan

2018-05-01

The stabilities and electronic structures of SimAln-mNn and SinNn (n = 16, 20, m = 12 and n = 24, m = 16) fullerene-like cages have been investigated using density functional method B3LYP and the second-order perturbation theory MP2. The results show that the SimAln-mNn and SinNn fullerenes are more stable than the AlN counterparts. Comparing with the corresponding AlnNn cages, one silicon atom in each Si2N2 square protrudes and the excess electrons reside as lone pair electrons at the outside of the protrudent Si atoms. Analyses on the electronic structures suggest that the Sisbnd N bonds are covalent bonding with strong polarity. The ELF (electron localization function) shows large electron pair probability between Si and N atoms. The orbital interactions between Si and N are stronger than that between Al and N atoms; the overlap integral is 0.40 per Sisbnd N bond in SinNn and 0.34 per Alsbnd N bond in AlnNn. The AIM (atoms in molecule) charges on the Al atoms in AlnNn and SimAln-mNn are 2.37 and 2.40. The charges on the in-plane and protrudent Si atoms are about 2.88 and 1.50 respectively. Considering the large local dipole moments around the protrudent Si atoms, the electrostatic interactions are also favorable to the SiN cages.

Aluminum nitride coatings using response surface methodology to optimize the thermal dissipated performance of light-emitting diode modules

NASA Astrophysics Data System (ADS)

Jean, Ming-Der; Lei, Peng-Da; Kong, Ling-Hua; Liu, Cheng-Wu

2018-05-01

This study optimizes the thermal dissipation ability of aluminum nitride (AlN) ceramics to increase the thermal performance of light-emitting diode (LED) modulus. AlN powders are deposited on heat sink as a heat interface material, using an electrostatic spraying process. The junction temperature of the heat sink is developed by response surface methodology based on Taguchi methods. In addition, the structure and properties of the AlN coating are examined using X-ray photoelectron spectroscopy (XPS). In the XPS analysis, the AlN sub-peaks are observed at 72.79 eV for Al2p and 398.88 eV for N1s, and an N1s sub-peak is assigned to N-O at 398.60eV and Al-N bonding at 395.95eV, which allows good thermal properties. The results have shown that the use of AlN ceramic material on a heat sink can enhance the thermal performance of LED modules. In addition, the percentage error between the predicted and experimental results compared the quadric model with between the linear and he interaction models was found to be within 7.89%, indicating that it was a good predictor. Accordingly, RSM can effectively enhance the thermal performance of an LED, and the beneficial heat dissipation effects for AlN are improved by electrostatic spraying.

Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure.

PubMed

Ro, Ruyen; Chiang, Yuan-Feng; Sung, Chia-Chi; Lee, Ruyue; Wu, Sean

2010-01-01

In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al electrodes as well as the thickness of electrode on phase velocity, coupling coefficient, and reflectivity of SAWs are illustrated. Propagation characteristics of SAWs in (002) AlN/diamond-based structures are also presented for comparison. Simulation results show that to retain a large reflectivity for the design of RF filters and duplexers, the Cu IDT/(100) AlN/diamond structure possesses the highest phase velocity and largest coupling coefficient at the smallest AlN film thickness- to-wavelength ratio.

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

NASA Astrophysics Data System (ADS)

Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

2017-10-01

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurai, Satoshi, E-mail: kurai@yamaguchi-u.ac.jp; Yamada, Yoichi; Miyake, Hideto

2016-01-14

Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with Si concentrations of 3.0–37 × 10{sup 17 }cm{sup −3} were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractionsmore » of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of V{sub Al} did not contribute to the linewidth broadening, unlike the case of the V{sub Al} clusters.« less

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, B. S.; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190; Barate, P.

Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (P{sub c}) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determinedmore » only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.« less

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shuo-Wei; Epistar Corporation, Hsinchu 300, Taiwan; Li, Heng

The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study showsmore » the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.« less

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

The Oxidation of AlN in Dry and Wet Oxygen

NASA Technical Reports Server (NTRS)

Opila, Elizabeth; Humphrey, Donald; Jacobson, Nathan; Yoshio, Tetsuo; Oda, Kohei

1998-01-01

The oxidation kinetics of AlN containing 3.5 wt% Y2O3 were studied by thermogravimetric analysis in dry oxygen and 10% H2O/balance oxygen at temperatures between 1000 and 1200 C for times between 48 and 100 h. The oxidation kinetics for AlN in dry oxygen were parabolic and of approximately the same magnitude and temperature dependence as other alumina forming materials. In this case, diffusion of oxygen and/or aluminum through the alumina scale is the rate limiting mechanism. The oxidation kinetics for AlN in wet oxygen were nearly linear and much more rapid than rates observed in dry oxygen. Numerous micropores were observed in the alumina formed on AIN in wet oxygen. These pores provide a fast path for oxygen transport. The linear kinetics observed in this case suggest that the interface reaction rate of AlN with wet oxygen is the oxidation rate limiting step.

AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Y.; Li, H.; Robertson, J.

2016-05-28

AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed tomore » its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.« less

Synthesis and characterization of a new family of alkylammonium–chromium phosphates with worm-like morphology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amghouz, Zakariae, E-mail: amghouz.uo@uniovi.es; Departamento de Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo; Espina, Aránzazu

A series of layered alkylammonium–chromium phosphates, formulated as [C{sub n}H{sub 2n+1}NH{sub 3}]Cr(OH)PO{sub 4} (n=2–6), has been synthesized under hydrothermal conditions. The interlayer spacing, increasing linearly with the increase of alkyl-chain length from 13.61 Å (n=2) to 21.20 Å (n=6), is occupied by a double sheet of packed amine molecules with a tilt angle of ca. 51° respect to the inorganic sheet. The powders are constituted by circular plates (diameter=0.5–3 µm, thickness=∼50 nm) with central holes when n=4–6, stacked in axial direction showing worm-like morphologies. The presence of holes, and some corrugated and zig-zag fashions observed on the edge of thinmore » circular plates are the most probable ways for the reduction of the steric tensions between organic and inorganic portions in these hybrid materials. The thermal and thermo-oxidative stability of selected compounds have been studied, including the determination of activation energy data for the decomposition processes. - Graphical abstract: A novel series of layered alkylammonium–chromium phosphates, [C{sub n}H{sub 2n+1}NH{sub 3}]Cr(OH)PO{sub 4} (n=2–6), was obtained and characterized. The interlayer spacing, increasing linearly with the increase of alkyl-chain length, is occupied by a double sheet of packed amine molecules. The powders are constituted by circular plates (diameter=0.5–3 µm, thickness=∼50 nm) with central holes when n=4–6, stacked in axial direction showing worm-like morphologies. - Highlights: • A series of alkylammonium–chromium phosphates has been obtained by the hydrothermal method. • The interlayer spacing increases linearly with the increase of alkyl-chain length. • The interlayer spacing is occupied by a double sheet of packed amine molecules. • The powders are constituted by stacked circular plates showing wormlike morphology. • Thermal behaviour depends on the atmosphere used and the intercalated amine.« less

Structures and stabilities of Al(n) (+), Al(n), and Al(n) (-) (n=13-34) clusters.

PubMed

Aguado, Andrés; López, José M

2009-02-14

Putative global minima of neutral (Al(n)) and singly charged (Al(n) (+) and Al(n) (-)) aluminum clusters with n=13-34 have been located from first-principles density functional theory structural optimizations. The calculations include spin polarization and employ the generalized gradient approximation of Perdew, Burke, and Ernzerhof to describe exchange-correlation electronic effects. Our results show that icosahedral growth dominates the structures of aluminum clusters for n=13-22. For n=23-34, there is a strong competition between decahedral structures, relaxed fragments of a fcc crystalline lattice (some of them including stacking faults), and hexagonal prismatic structures. For such small cluster sizes, there is no evidence yet for a clear establishment of the fcc atomic packing prevalent in bulk aluminum. The global minimum structure for a given number of atoms depends significantly on the cluster charge for most cluster sizes. An explicit comparison is made with previous theoretical results in the range n=13-30: for n=19, 22, 24, 25, 26, 29, 30 we locate a lower energy structure than previously reported. Sizes n=32, 33 are studied here for the first time by an ab initio technique.

Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing

NASA Astrophysics Data System (ADS)

Greenlee, Jordan D.; Gunning, Brendan; Feigelson, Boris N.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.; Kub, Francis J.; Doolittle, W. Alan

2016-01-01

Multicycle rapid thermal annealing (MRTA) is shown to reduce the defect density of molecular beam epitaxially grown AlN films. No damage to the AlN surface occurred after performing the MRTA process at 1520°C. However, the individual grain structure was altered, with the emergence of step edges. This change in grain structure and diffusion of AlN resulted in an improvement in the crystalline structure. The Raman E2 linewidth decreased, confirming an improvement in crystal quality. The optical band edge of the AlN maintained the expected value of 6.2 eV throughout MRTA annealing, and the band edge sharpened after MRTA annealing at increased temperatures, providing further evidence of crystalline improvement. X-ray diffraction shows a substantial improvement in the (002) and (102) rocking curve FWHM for both the 1400 and 1520°C MRTA annealing conditions compared to the as-grown films, indicating that the screw and edge type dislocation densities decreased. Overall, the MRTA post-growth annealing of AlN lowers defect density, and thus will be a key step to improving optoelectronic and power electronic devices. [Figure not available: see fulltext.

Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Meei-Ru; Chen, Hou-Guang; Kao, Hui-Ling, E-mail: hlkao@cycu.edu.tw

2015-05-15

AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscopy. The films exhibit smooth surface with root-mean-square roughness as small as 0.7 nm evaluated by atomic force microscope. The optical transmittance spectra show a steep absorption edge at the wavelength of 200 nm and a high transmittance of over 80% in the visible range. The band-edge transition (6.30 eV) of AlN film was observed in the cathodoluminescence spectrum recorded at 11 K. The spectral response of metal–semiconductor–metal photodetectors constructedmore » with AlN/sapphire reveals the peak responsivity at 200 nm and a UV/visible rejection ratio of about two orders of magnitude. The results of this low temperature deposition suggest the feasibility of the epitaxial growth of AlN on sapphire substrates and the incorporation of the AlN films in the surface acoustic wave devices and the optical devices at deep ultraviolet region.« less

Understanding AlN Obtaining Through Computational Thermodynamics Combined with Experimental Investigation

NASA Astrophysics Data System (ADS)

Florea, R. M.

2017-06-01

Basic material concept, technology and some results of studies on aluminum matrix composite with dispersive aluminum nitride reinforcement was shown. Studied composites were manufactured by „in situ” technique. Aluminum nitride (AlN) has attracted large interest recently, because of its high thermal conductivity, good dielectric properties, high flexural strength, thermal expansion coefficient matches that of Si and its non-toxic nature, as a suitable material for hybrid integrated circuit substrates. AlMg alloys are the best matrix for AlN obtaining. Al2O3-AlMg, AlN-Al2O3, and AlN-AlMg binary diagrams were thermodynamically modelled. The obtained Gibbs free energies of components, solution parameters and stoichiometric phases were used to build a thermodynamic database of AlN- Al2O3-AlMg system. Obtaining of AlN with Liquid-phase of AlMg as matrix has been studied and compared with the thermodynamic results. The secondary phase microstructure has a significant effect on the final thermal conductivity of the obtained AlN. Thermodynamic modelling of AlN-Al2O3-AlMg system provided an important basis for understanding the obtaining behavior and interpreting the experimental results.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-05-01

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-12-01

In situ-formed SiO 2 was introduced into HfO 2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO 2 /SiO 2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO 2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO 2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10 -3 A/cm 2 at gate bias of V fb  + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO 2 /SiO 2 /Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO 2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Hydroxyapatite-anchored dendrimer for in situ remineralization of human tooth enamel.

PubMed

Wu, Duo; Yang, Jiaojiao; Li, Jiyao; Chen, Liang; Tang, Bei; Chen, Xingyu; Wu, Wei; Li, Jianshu

2013-07-01

In situ remineralization of hydroxyapatite (HA) on human tooth enamel surface induced by organic matrices is of great interest in the fields of material science and stomatology. In order to mimic the organic matrices induced biomineralization process in developing enamel and enhance the binding strength at the remineralization interface, carboxyl-terminated poly(amido amine) (PAMAM-COOH)-alendronate (ALN) conjugate (ALN-PAMAM-COOH) was synthesized and characterized. PAMAM-COOH has a highly ordered architecture and is capable of promoting the HA crystallization process. ALN is conjugated on PAMAM-COOH due to its specific adsorption on HA (the main component of tooth enamel), resulting in increased binding strength which is tight enough to resist phosphate buffered saline (PBS) rinsing as compared with that of PAMAM-COOH alone. While incubated in artificial saliva, ALN-PAMAM-COOH could induce in situ remineralization of HA on acid-etched enamel, and the regenerated HA has the nanorod-like crystal structure similar to that of human tooth enamel. The hardness of acid-etched enamel samples treated by ALN-PAMAM-COOH can recover up to 95.5% of the original value with strong adhesion force. In vivo experiment also demonstrates that ALN-PAMAM-COOH is effective in repairing acid-etched enamel in the oral cavity. Overall, these results suggest that ALN-PAMAM-COOH is highly promising as a restorative biomaterial for in situ remineralization of human tooth enamel. Copyright © 2013 Elsevier Ltd. All rights reserved.

A first-principles study of the properties of four predicted novel phases of AlN

NASA Astrophysics Data System (ADS)

Yang, Ruike; Zhu, Chuanshuai; Wei, Qun; Du, Zheng

2017-05-01

Structural, elastic, thermodynamic, electronic and optical properties of four predicted novel AlN phases (Pmn21-AlN, Pbam-AlN, Pbca-AlN and Cmcm-AlN) are calculated using first-principles according to density function theory (DFT). These phases were found using the CALYPSO method but have not yet been synthesized experimentally. Here we predict some of their properties. The properties are analyzed by means of GGA-PBE and PBE0 respectively. The more precision results are obtained by PBE0. Cmcm-AlN owns better plasticity and it's Young's modulus has clearer anisotropy than Pmn21-AlN, Pbam-AlN and Pbca-AlN. The Debye temperature, under higher temperature, shows weak temperature dependence and approach to a constant value. The Dulong-Petit limit of all four novel AlN phases and wz-AlN is about 48 J mol-1 K-1 and they have almost the same temperature law. The band structures show that the four AlN are the wide direct band gap semiconductors, which band gaps are 5.95 (Pmn21-AlN), 5.99 (Pbam-AlN), 5.88 (Pbca-AlN) and 5.59 eV (Cmcm-AlN). The bonding behaviors are the combination of covalent and ionic nature. The dielectric constants, refractive index, reflectivity, absorption, loss spectra, conductivity and Raman spectra are also calculated in detail. All four phases have a lower plasma frequency than of wz-AlN.

Evaluation of interlayer interfacial stiffness and layer wave velocity of multilayered structures by ultrasonic spectroscopy.

PubMed

Ishii, Yosuke; Biwa, Shiro

2014-07-01

An ultrasonic evaluation procedure for the interlayer interfacial normal stiffness and the intralayer longitudinal wave velocity of multilayered plate-like structures is proposed. Based on the characteristics of the amplitude reflection spectrum of ultrasonic wave at normal incidence to a layered structure with spring-type interlayer interfaces, it is shown that the interfacial normal stiffness and the longitudinal wave velocity in the layers can be simultaneously evaluated from the frequencies of local maxima and minima of the spectrum provided that all interfaces and layers have the same properties. The effectiveness of the proposed procedure is investigated from the perspective of the sensitivity of local extremal frequencies of the reflection spectrum. The feasibility of the proposed procedure is also investigated when the stiffness of each interface is subjected to small random fluctuations about a certain average value. The proposed procedure is applied to a 16-layered cross-ply carbon-fiber-reinforced composite laminate. The normal stiffness of resin-rich interfaces and the longitudinal wave velocity of plies in the thickness direction evaluated from the experimental reflection spectrum are shown to be consistent with simple theoretical estimations.

Enhanced interlayer exchange coupling in antiferromagnetically coupled ultrathin (Co70Fe30/Pd) multilayers

NASA Astrophysics Data System (ADS)

Meng, Zhaoliang; Qiu, Jinjun; Han, Guchang; Teo, Kie Leong

2015-12-01

We report the studies of magnetization reversal and magnetic interlayer coupling in synthetic antiferromagnetic (SAF) [Pd/Co70Fe30]9/Ru(tRu)/Pd(tPd)/[Co70Fe30/Pd]9 structure as functions of inserted Pd layer (tPd) and Ru layer (tRu) thicknesses. We found the exchange coupling field (Hex) and perpendicular magnetic anisotropy (PMA) can be controlled by both the tPd and tRu, The Hex shows a Ruderman-Kittel-Kasuya-Yosida-type oscillatory decay dependence on tRu and a maximum interlayer coupling strength Jex = 0.522 erg/cm2 is achieved at tPd + tRu ≈ 0.8 nm in the as-deposited sample. As it is known that a high post-annealing stability of SAF structure is required for magnetic random access memory applications, the dependence of Hex and PMA on the post-annealing temperature (Ta) is also investigated. We found that both high PMA of the top Co70Fe30/Pd multilayer is maintained and Hex is enhanced with increasing Ta up to 350 °C for tRu > 0.7 nm in our SAF structure.

Simultaneous determination of the residual stress, elastic modulus, density and thickness of ultrathin film utilizing vibrating doubly clamped micro-/nanobeams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stachiv, Ivo, E-mail: stachiv@fzu.cz; Institute of Physics, Czech Academy of Sciences, Prague; Kuo, Chih-Yun

2016-04-15

Measurement of ultrathin film thickness and its basic properties can be highly challenging and time consuming due to necessity of using several very sophisticated devices. Here, we report an easy accessible resonant based method capable to simultaneously determinate the residual stress, elastic modulus, density and thickness of ultrathin film coated on doubly clamped micro-/nanobeam. We show that a general dependency of the resonant frequencies on the axial load is also valid for in-plane vibrations, and the one depends only on the considered vibrational mode. As a result, we found that the film elastic modulus, density and thickness can be evaluatedmore » from two measured in-plane and out-plane fundamental resonant frequencies of micro-/nanobeam with and without film under different prestress forces. Whereas, the residual stress can be determined from two out-plane (in-plane) measured consecutive resonant frequencies of beam with film under different prestress forces without necessity of knowing film and substrate properties and dimensions. Moreover, we also reveal that the common uncertainties in force (and thickness) determination have a negligible (and minor) impact on the determined film properties. The application potential of the present method is illustrated on the beam made of silicon and SiO{sub 2} with deposited 20 nm thick AlN and 40 nm thick Au thin films, respectively.« less

Interlayer Exchange Coupling: A General Scheme Turning Chiral Magnets into Magnetic Multilayers Carrying Atomic-Scale Skyrmions.

PubMed

Nandy, Ashis Kumar; Kiselev, Nikolai S; Blügel, Stefan

2016-04-29

We report on a general principle using interlayer exchange coupling to extend the regime of chiral magnetic films in which stable or metastable magnetic Skyrmions can appear at a zero magnetic field. We verify this concept on the basis of a first-principles model for a Mn monolayer on a W(001) substrate, a prototype chiral magnet for which the atomic-scale magnetic texture is determined by the frustration of exchange interactions, impossible to unwind by laboratory magnetic fields. By means of ab initio calculations for the Mn/W_{m}/Co_{n}/Pt/W(001) multilayer system we show that for certain thicknesses m of the W spacer and n of the Co reference layer, the effective field of the reference layer fully substitutes the required magnetic field for Skyrmion formation.

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

NASA Astrophysics Data System (ADS)

Xiang, Li; Degang, Zhao; Desheng, Jiang; Ping, Chen; Zongshun, Liu; Jianjun, Zhu; Ming, Shi; Danmei, Zhao; Wei, Liu

2016-01-01

Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well (QW), an AlGaAs interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the AlGaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency. Project supported by the National Natural Science Foundation of China (Nos. 61377020, 61376089, 61223005, 61176126) and the National Science Fund for Distinguished Young Scholars (No. 60925017).

Efficient CsF interlayer for high and low bandgap polymer solar cell

NASA Astrophysics Data System (ADS)

Mitul, Abu Farzan; Sarker, Jith; Adhikari, Nirmal; Mohammad, Lal; Wang, Qi; Khatiwada, Devendra; Qiao, Qiquan

2018-02-01

Low bandgap polymer solar cells have a great deal of importance in flexible photovoltaic market to absorb sun light more efficiently. Efficient wide bandgap solar cells are always available in nature to absorb visible photons. The development and incorporation of infrared photovoltaics (IR PV) with wide bandgap solar cells can improve overall solar device performance. Here, we have developed an efficient low bandgap polymer solar cell with CsF as interfacial layer in regular structure. Polymer solar cell devices with CsF shows enhanced performance than Ca as interfacial layer. The power conversion efficiency of 4.5% has been obtained for PDPP3T based polymer solar cell with CsF as interlayer. Finally, an optimal thickness with CsF as interfacial layer has been found to improve the efficiency in low bandgap polymer solar cells.

Betavoltaic Battery Conversion Efficiency Improvement Based on Interlayer Structures

NASA Astrophysics Data System (ADS)

Li, Da-Rang; Jiang, Lan; Yin, Jian-Hua; Tan, Yuan-Yuan; Lin, Nai

2012-07-01

Significant differences among the doping densities of PN junctions in semiconductors cause lattice mismatch and lattice defects that increase the recombination current of betavoltaic batteries. This extensively decreases the open circuit voltage and the short current, which results in low conversion efficiency. This study proposes P+PINN+-structure based betavoltaic batteries by adding an interlayer to typical PIN structures to improve conversion efficiency. Numerical simulations are conducted for the energy deposition of beta particles along the thickness direction in semiconductors. Based on this, 63Ni-radiation GaAs batteries with PIN and P+PINN+ structures are designed and fabricated to experimentally verify the proposed design. It turns out that the conversion efficiency of the betavoltaic battery with the proposed P+PINN+ structure is about 1.45 times higher than that with the traditional PIN structure.

Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

PubMed

Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

2015-08-10

We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

Growth and structure of In{sub 0.5}Ga{sub 0.5}Sb quantum dots on GaP(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sala, E. M.; Stracke, G.; Schlichting, S.

2016-09-05

Stranski-Krastanov (SK) growth of In{sub 0.5}Ga{sub 0.5}Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 10{sup 9} to 2 × 10{sup 11} cm{sup −2} depending on material deposition and Sb-flush time. When In{sub 0.5}Ga{sub 0.5}Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

NASA Astrophysics Data System (ADS)

Watanabe, Kenta; Terashima, Daiki; Nozaki, Mikito; Yamada, Takahiro; Nakazawa, Satoshi; Ishida, Masahiro; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

Stacked gate dielectrics consisting of wide bandgap SiO2 insulators and thin aluminum oxynitride (AlON) interlayers were systematically investigated in order to improve the performance and reliability of AlGaN/GaN metal–oxide–semiconductor (MOS) devices. A significantly reduced gate leakage current compared with that in a single AlON layer was achieved with these structures, while maintaining the superior thermal stability and electrical properties of the oxynitride/AlGaN interface. Consequently, distinct advantages in terms of the reliability of the gate dielectrics, such as an improved immunity against electron injection and an increased dielectric breakdown field, were demonstrated for AlGaN/GaN MOS capacitors with optimized stacked structures having a 3.3-nm-thick AlON interlayer.

Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications.

PubMed

Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

2017-02-17

Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications

NASA Astrophysics Data System (ADS)

Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

2017-02-01

Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

Oxygen inhibition layer of composite resins: effects of layer thickness and surface layer treatment on the interlayer bond strength.

PubMed

Bijelic-Donova, Jasmina; Garoushi, Sufyan; Lassila, Lippo V J; Vallittu, Pekka K

2015-02-01

An oxygen inhibition layer develops on surfaces exposed to air during polymerization of particulate filling composite. This study assessed the thickness of the oxygen inhibition layer of short-fiber-reinforced composite in comparison with conventional particulate filling composites. The effect of an oxygen inhibition layer on the shear bond strength of incrementally placed particulate filling composite layers was also evaluated. Four different restorative composites were selected: everX Posterior (a short-fiber-reinforced composite), Z250, SupremeXT, and Silorane. All composites were evaluated regarding the thickness of the oxygen inhibition layer and for shear bond strength. An equal amount of each composite was polymerized in air between two glass plates and the thickness of the oxygen inhibition layer was measured using a stereomicroscope. Cylindrical-shaped specimens were prepared for measurement of shear bond strength by placing incrementally two layers of the same composite material. Before applying the second composite layer, the first increment's bonding site was treated as follows: grinding with 1,000-grit silicon-carbide (SiC) abrasive paper, or treatment with ethanol or with water-spray. The inhibition depth was lowest (11.6 μm) for water-sprayed Silorane and greatest (22.9 μm) for the water-sprayed short-fiber-reinforced composite. The shear bond strength ranged from 5.8 MPa (ground Silorane) to 36.4 MPa (water-sprayed SupremeXT). The presence of an oxygen inhibition layer enhanced the interlayer shear bond strength of all investigated materials, but its absence resulted in cohesive and mixed failures only with the short-fiber-reinforced composite. Thus, more durable adhesion with short-fiber-reinforced composite is expected. © 2014 Eur J Oral Sci.

Spatial inhomogeneities in Al x Ga1-x N quantum wells induced by the surface morphology of AlN/sapphire templates

NASA Astrophysics Data System (ADS)

Zeimer, Ute; Jeschke, Joerg; Mogilatenko, Anna; Knauer, Arne; Kueller, Viola; Hoffmann, Veit; Kuhn, Christian; Simoneit, Tino; Martens, Martin; Wernicke, Tim; Kneissl, Michael; Weyers, Markus

2015-11-01

The effects of the template on the optical and structural properties of Al0.75Ga0.25N/Al0.8Ga0.2N multiple quantum well (MQWs) laser active regions have been investigated. The laser structures for optical pumping were grown on planar c-plane AlN/sapphire as well as on thick epitaxially laterally overgrown (ELO) AlN layers on patterned AlN/sapphire. Two ELO AlN/sapphire templates were investigated, one with a miscut of the sapphire surface to the m-direction with an angle of 0.25°, the other with a miscut angle of 0.25° to the sapphire a-direction. The MQWs are studied by atomic force microscopy, plan-view cathodoluminescence (CL) at room temperature and 83 K as well as transmission electron microscopy using high-angle annular dark-field imaging and energy-dispersive x-ray spectroscopy. The results are compared to optical pumping measurements. It was found that the surface morphology of the templates determines the lateral wavelength distribution in the MQWs observed by spectral CL mappings. The lateral wavelength spread is largest for the laser structures grown on ELO AlN with miscut to sapphire a-direction caused by the local variation of the MQW thicknesses and the Ga incorporation at macrosteps on the ELO-AlN. A CL peak wavelength spread of up to 7 nm has been found. The MQWs grown on planar AlN/sapphire templates show a homogeneous wavelength distribution. However, due to the high threading dislocation density and the resulting strong nonradiative recombination, laser operation could not be achieved. The laser structures grown on ELO AlN/sapphire show optically pumped lasing with a record short wavelength of 237 nm.

Loss of Ductility Caused by AlN Precipitation in Hadfield Steel

NASA Astrophysics Data System (ADS)

Radis, Rene; Schlacher, Christian; Kozeschnik, Ernst; Mayr, Peter; Enzinger, Norbert; Schröttner, Hartmuth; Sommitsch, Christof

2012-04-01

Two modified X120Mn12 Hadfield steels, differing in the amount of the alloying elements Al and N, are analyzed with respect to AlN precipitation and its effects on ductility. Charpy impact tests are performed, demonstrating the loss of ductility in the one grade containing a high density of AlN precipitates. The characterization of the precipitates is carried out by high-resolution scanning electron microscopy (HRSEM). Depending on chemical composition, primary and secondary AlN precipitates are detected on prior austenite grain boundaries and within the bulk volume. The experimental observations are confirmed by thermokinetic simulations, using the software package MatCalc (Vienna University of Technology, Vienna, Austria).

Spectral features and voltage effects in high-field electroluminescence of AlN filamentary nanocrystals

NASA Astrophysics Data System (ADS)

Weinstein, I. A.; Vokhmintsev, A. S.; Chaikin, D. V.; Afonin, Yu. D.

2016-11-01

The high-field electroluminescence (EL) spectra for Al-rich AlN nanowhiskers varying applied voltage were studied. The observed 2.70 eV emission, which can be considered as superposition of two Gaussian bands in 2.75 and 2.53 eV, was analyzed. It was shown that Fowler-Nordheim effect took place in EL mechanism with participation of capturing levels of ON- and VN-centers when AlN nanowhiskers were exposed to an external field of 2.5 ÷ 10 V/μm. Obtained results and made conclusions are in a good agreement with independent electron field emission measurements for different one-dimensional AlN nanostructures.

Effect of a sequential treatment combining abaloparatide and alendronate for the management of postmenopausal osteoporosis.

PubMed

Reginster, J Y; Al Daghri, Nasser; Kaufman, Jean-Marc; Bruyère, Olivier

2018-02-01

The recently published results of the sequential treatment of postmenopausal osteoporotic women with subcutaneous abaloparatide (80 µg/day) (ABL) for 18 months followed by 6 months of oral alendronate (70 mg/week) (ALN) support the administration of an anti-resorptive agent after completion of a treatment course with an osteoanabolic agent. The ABL/ALN sequence resulted in greater bone mineral density gains at all skeletal sites and in a reduction of vertebral, non-vertebral, major and clinical fractures compared to what is observed after 18 months of placebo followed by 6 months of ALN. Whereas questions remained unanswered about the ideal anti-resorptive agent to be used after ABL, the optimal duration of the administration of the anti-resorptive drug or the potential interest of re-initiating a course of ABL after a limited administration of ALN, these results support the use of the ABL/ALN sequence in the management of postmenopausal osteoporosis.

A comparative study on magnetism in Zn-doped AlN and GaN from first-principles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liang; Wang, Lingling, E-mail: llwang@hnu.edu.cn, E-mail: xiaowenzhi@hnu.edu.cn; Huang, Weiqing

2014-09-14

First-principles calculations have been used to comparatively investigate electronic and magnetic properties of Zn-doped AlN and GaN. A total magnetic moment of 1.0 μ B{sub B} induced by Zn is found in AlN, but not in GaN. Analyses show that the origin of spontaneous polarization not only depend on the localized atomic orbitals of N and sufficient hole concentration, but also the relative intensity of the covalency of matrix. The relatively stronger covalent character of GaN with respect to AlN impedes forming local magnetic moment in GaN matrix. Our study offers a fresh sight of spontaneous spin polarization in d⁰more » magnetism. The much stronger ferromagnetic coupling in c-plane of AlN means that it is feasible to realize long-range ferromagnetic order via monolayer delta-doping. This can apply to other wide band-gap semiconductors in wurtzite structure.« less

Growth and Comparison of Residual Stress of AlN Films on Silicon (100), (110) and (111) Substrates

NASA Astrophysics Data System (ADS)

Pandey, Akhilesh; Dutta, Shankar; Prakash, Ravi; Raman, R.; Kapoor, Ashok Kumar; Kaur, Davinder

2018-02-01

This paper reports on the comparison of residual stresses in AlN thin films sputter-deposited in identical conditions on Si (100) (110) and (111) substrates. The deposited films are of polycrystalline wurtzite structure with preferred orientation along the (002) direction. AlN film on the Si (111) substrate showed a vertical columnar structure, whereas films on Si (100) and (110) showed tilted columnar structures. Residual stress in the AlN films is estimated by x-ray diffraction (XRD), infra-red absorption method and wafer curvature technique. Films residual stress are found compressive and values are in the range of - 650 (± 50) MPa, - 730 (± 50) MPa and - 300 (± 50) MPa for the AlN films grown on Si (100), (110) and (111) substrates, respectively, with different techniques. The difference in residual stresses can be attributed to the microstructure of the films and mismatch between in plane atomic arrangements of the film and substrates.

Influence of AlN(0001) Surface Reconstructions on the Wettability of an Al/AlN System: A First-Principle Study.

PubMed

Cao, Junhua; Liu, Yang; Ning, Xiao-Shan

2018-05-11

A successful application of a hot dip coating process that coats aluminum (Al) on aluminum nitride (AlN) ceramics, revealed that Al had a perfect wettability to the ceramics under specific circumstances, which was different from previous reports. In order to elucidate the mechanism that controlled the supernormal wetting phenomenon during the dip coating, a first-principle calculation of an Al(111)/AlN(0001) interface, based on the density functional theory (DFT), was employed. The wettability of the Al melt on the AlN(0001) surface, as well as the effect that the surface reconstruction of AlN and the oxygen adsorption had on Al for the adhesion and the wettability of the Al/AlN system, were studied. The results revealed that a LCM (laterally contracted monolayer) reconstruction could improve the adhesion and wettability of the system. Oxygen adsorption on the free surface of Al decreased the contact angle, because the adsorption reduced of the surface tension of Al. A prefect wetting was obtained only after some of the oxygen atoms adsorbed on the free surface of Al. The supernormal wetting phenomenon came from the surface reconstruction of the AlN and the adsorption of oxygen atoms on the Al melt surface.

Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belkerk, B. E.; Soussou, A.; Carette, M.

This Letter reports the thermal conductivity of aluminium nitride (AlN) thin-films deposited by reactive DC magnetron sputtering on single-crystal silicon substrates (100) with varying plasma and magnetic conditions achieving different crystalline qualities. The thermal conductivity of the films was measured at room temperature with the transient hot-strip technique for film thicknesses ranging from 100 nm to 4000 nm. The thermal conductivity was found to increase with the thickness depending on the synthesis conditions and film microstructure. The conductivity in the bulk region of the films, so-called intrinsic conductivity, and the boundary resistance were in the range [120-210] W m{sup -1}more » K{sup -1} and [2-30 Multiplication-Sign 10{sup -9}] K m{sup 2} W{sup -1}, respectively, in good agreement with microstructures analysed by x-ray diffraction, high-resolution-scanning-electron-microscopy, and transmission-electron-microscopy.« less

Effect of Sequential Treatment with Bisphosphonates After Teriparatide in Ovariectomized Rats: A Direct Comparison Between Risedronate and Alendronate.

PubMed

Yano, Tetsuo; Yamada, Mei; Inoue, Daisuke

2017-07-01

Teriparatide (TPTD), a recombinant human parathyroid hormone N-terminal fragment (1-34), is a widely used bone anabolic drug for osteoporosis. Sequential treatment with antiresorptives such as bisphosphonates after TPTD discontinuation is generally recommended. However, relative effects of bisphosphonates have not been determined. In the present study, we directly compared effects of risedronate (RIS) and alendronate (ALN) on bone mineral density (BMD), bone turnover, structural property and strength in ovariectomized (OVX) rats, when administered after TPTD. Female Sprague Dawley rats were divided into one sham-operated and eight ovariectomized groups. TPTD, RIS, and ALN were given subcutaneously twice per week for 4 or 8 weeks after 4 week treatment with TPTD. TPTD significantly increased BMD (+9.6%) in OVX rats after 4 weeks of treatment. 8 weeks after TPTD withdrawal, vehicle-treated group showed a blunted BMD increase of +8.4% from the baseline. In contrast, 8 weeks of treatment with RIS and ALN significantly increased BMD to 17.4 and 21.8%, respectively. While ALN caused a consistently larger increase in BMD, sequential treatment with RIS resulted in lower Tb.Sp compared to ALN in the fourth lumbar vertebra as well as in greater stiffness in compression test. In conclusion, the present study demonstrated that sequential therapy with ALN and RIS after TPTD both improved bone mass and structure. Our results further suggest that RIS may have a greater effect on improving bone quality and stiffness than ALN despite less prominent effect on BMD. Further studies are necessary to determine clinical relevance of these findings to fracture rate.

Ab initio molecular dynamics simulations of AlN responding to low energy particle radiation

NASA Astrophysics Data System (ADS)

Xi, Jianqi; Liu, Bin; Zhang, Yanwen; Weber, William J.

2018-01-01

Ab initio molecular dynamics simulations of low energy recoil events in wurtzite AlN have been performed to determine threshold displacement energies, defect production and evolution mechanisms, role of partial charge transfer during the process, and the influence of irradiation-induced defects on the properties of AlN. The results show that the threshold displacement energies, Ed, along the direction parallel to the basal planes are smaller than those perpendicular to the basal planes. The minimum Ed values are determined to be 19 eV and 55 eV for N and Al atom, respectively, which occur along the [ 1 ¯ 1 ¯ 20 ] direction. In general, the threshold displacement energies for N are smaller than those for Al atom, indicating the N defects would be dominant under irradiation. The defect production mechanisms have been analyzed. It is found that charge transfer and redistribution for both the primary knock-on atom and the subsequent recoil atoms play a significant role in defect production and evolution. Similar to the trend in oxide materials, there is a nearly linear relationship between Ed and the total amount of charge transfer at the potential energy peak in AlN, which provides guidance on the development of charge-transfer interatomic potentials for classic molecular dynamics simulations. Finally, the response behavior of AlN to low energy irradiation is qualitatively investigated. The existence of irradiation-induced defects significantly modifies the electronic structure, and thus affects the magnetic, electronic and optical properties of AlN. These findings further enrich the understanding of defects in the wide bandgap semiconductor of AlN.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhi-jie; Dai, Le-yang; Yang, De-zheng

Highlights: • A novel and high efficiency synthesizing AlN powders method combining mechanical ball milling and DBDP has been developed. • The particle size, the crystallite size, the lattice distortion, the morphology of Al{sub 2}O{sub 3} powders, and the AlN conversion rate are investigated and compared under the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP. • The ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermalmore » temperature. - Abstract: In this paper, aluminum nitride (AlN) powers have been produced with a novel and high efficiency method by thermal annealing at 1100–1600 °C of alumina (Al{sub 2}O{sub 3}) powders which were previously ball milled for various time up to 40 h with and without the assistant of dielectric barrier discharge plasma (DBDP). The ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP and the corresponding synthesized AlN powers are characterized by X-ray diffraction, scanning electron microscope, and transmission electron microscopy. From the characteristics of the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP, it can be seen that the ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermal temperature. Meanwhile, the synthesized AlN powders can be known as hexagonal AlN with fine crystal morphology and irregular lump-like structure, and have uniform distribution with the average particle size of about between 500 nm and 1000 nm. This provides an important method for fabricating ultra fine powders and synthesizing nitrogen compounds.« less

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

NASA Astrophysics Data System (ADS)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth of N-polar InGaN by MOCVD is challenging. These challenges arise from the lack of available native substrates suitable for N-polar film growth. As a result, InGaN layers are conventionally grown in the III-polar direction (i.e. III-polar InGaN) and typically grow under considerable amounts of stress on III-polar GaN base layers. While the structure-property relations of thin III-polar InGaN layers have been widely studied in quantum well structures, insight into the growth of thick films and N-polar InGaN layers have been limited. Therefore, this dissertation research compared the growth of both thick III-polar and N-polar InGaN films grown on optimized GaN base layers. III-polar InGaN films were rough and exhibited a high density of V-pits, while the growth of thick N-polar InGaN films showed improved structural quality and low surface roughness. The results of this dissertation work thereby provide an alternative route to the fabrication of thick InGaN films for potential use in solar cells as well as strain reducing schemes for deep-green and red light emitters. Moreover, this dissertation investigated stress relaxation in thick N-polar films using in situ reflectivity and curvature measurements. The results showed that stress relaxation in N-polar InGaN significantly differed from III-polar InGaN due to the absence of V-pits and it was hypothesized that plastic relaxation in N-polar InGaN could occur by dislocation glide, which typically is kinetically limited at such low growth temperatures required for InGaN. The second part of this dissertation research work focused on buffer free growth of GaN directly on SiC and on epitaxial graphene produced on SiC for potential vertical devices. The studies presented in this dissertation work on the growth of GaN directly on SiC compared the stress evolution of GaN films grown with and without an AlN buffer layer. Films grown directly on SiC showed reduced threading dislocation densities and improved surface roughness when compared to the growth of GaN on an AlN buffer layer. The dislocations in the GaN films grown di

Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film

NASA Astrophysics Data System (ADS)

Silveira, E.; Freitas, J. A.; Slack, G. A.; Schowalter, L. J.; Kneissl, M.; Treat, D. W.; Johnson, N. M.

2005-07-01

In the present work we will report on the optical properties of an AlN film homoepitaxially grown on a high-quality large bulk AlN single crystal. The latter was grown by a sublimation-recondensation technique, while the film was grown by organometallic vapor-phase epitaxy. Cathodoluminescence measurements were performed using electron beam energies between 2 and 10 keV in order to excite the sample and so to probe different sample depths, making it possible to differentiate between different features which originate in the AlN homoepitaxial film. The penetration depth has been determined through the calculation of the Bohr-Bethe maximum range of excitation using the approximation to the Everhart-Hoff expression for the energy loss within a solid.

Diagnostics of transparent polymer coatings of metal items

NASA Astrophysics Data System (ADS)

Varepo, L. G.; Ermakova, I. N.; Nagornova, I. V.; Kondratov, A. P.

2017-08-01

The methods of visual and instrumental express diagnostics of safety critical defects and non-uniform thickness of transparent mono- and multilayer polyolefin surface coating of metal items are analyzed in the paper. The instrumental diagnostics method relates to colorimetric measuring based on effects, which appear in the polarized light for extrusion polymer coatings. A color coordinates dependence (in the color system CIE La*b*) on both HDPE / PVC coating thickness fluctuation values (from average ones) and coating interlayer or adhesion layer delaminating is shown. A variation of color characteristics in the polarized light at a liquid penetration into delaminated polymer layers is found. Measuring parameters and critical uncertainties are defined.

Thickness-dependence of optical constants for Ta2O5 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Thin film molybdenum silicide as potential temperature sensors for turbine engines

NASA Technical Reports Server (NTRS)

Ho, C. H.; Prakash, S.; Deshpandey, C. V.; Doerr, H. J.; Bunshah, R. F.

1989-01-01

Temperature measurements of Mo-Si-based thin-film resistance thermometers were studied. Annealing in an argon ambient at a temperature above 1000 C for at least 1 h is required to form the stable tetragonal MoSi2 phase. With a crack-free 2-micron-thick AlN barrier layer on top, a sensor was tested up to 1200 C. The resistivity vs temperature characteristic shows the room temperature resistivity and temperature coefficient of resistivity (TCR) of the sensor to be approximately 350 microohm and 0.01195 K, respectively. No film adhesion problems were observed for at least four testing cycles.

A micromachined thermally compensated thin film Lamb wave resonator for frequency control and sensing applications

NASA Astrophysics Data System (ADS)

Wingqvist, G.; Arapan, L.; Yantchev, V.; Katardjiev, I.

2009-03-01

Micromachined thin film plate acoustic wave resonators (FPARs) utilizing the lowest order symmetric Lamb wave (S0) propagating in highly textured 2 µm thick aluminium nitride (AlN) membranes have been successfully demonstrated (Yantchev and Katardjiev 2007 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 54 87-95). The proposed devices have a SAW-based design and exhibit Q factors of up to 3000 at a frequency around 900 MHz as well as design flexibility with respect to the required motional resistance. However, a notable drawback of the proposed devices is the non-zero temperature coefficient of frequency (TCF) which lies in the range -20 ppm K-1 to -25 ppm K-1. Thus, despite the promising features demonstrated, further device optimization is required. In this work temperature compensation of thin AlN film Lamb wave resonators is studied and experimentally demonstrated. Temperature compensation while retaining at the same time the device electromechanical coupling is experimentally demonstrated. The zero TCF Lamb wave resonators are fabricated onto composite AlN/SiO2 membranes. Q factors of around 1400 have been measured at a frequency of around 755 MHz. Finally, the impact of technological issues on the device performance is discussed in view of improving the device performance.

Odanacatib, effects of 16-month treatment and discontinuation of therapy on bone mass, turnover and strength in the ovariectomized rabbit model of osteopenia.

PubMed

Duong, Le T; Crawford, Randy; Scott, Kevin; Winkelmann, Christopher T; Wu, Gouxin; Szczerba, Pete; Gentile, Michael A

2016-12-01

Odanacatib (ODN) a selective and reversible cathepsin K inhibitor, inhibits bone resorption, increases bone mass and reduces fracture risk in women with osteoporosis. A 16-month (~7-remodeling cycles) study was carried out in treatment mode to assess the effects of ODN versus ALN on bone mass, remodeling status and biomechanical properties of lumbar vertebrae (LV) and femur in ovariectomized (OVX) rabbits. This study also evaluated the impact of discontinuing ODN on these parameters. Rabbits at 7.5months post-OVX were dosed for 16-months with ODN (7.5μM·h 0-24 , in food) or ALN (0.2mg/kg/wk, s.c.) and compared to vehicle-treated OVX- (OVX+Veh) or Sham-operated animals. After 8months, treatment was discontinued in half of the ODN group. ODN treatment increased in vivo LV aBMD and trabecular (Tb) vBMD until reaching plateau at month 12 by 16% and 23% vs. baseline, respectively, comparable levels to that in Sham and significantly above OVX+Veh. LV BMD was also higher in ALN that plateaued around month 8 to levels below that in ODN or Sham. ODN treatment resulted in higher BMD, structure and improved biomechanical strength of LV and central femur (CF) to levels similar to Sham. ALN generally showed less robust efficacy compared to ODN. Neither ODN nor ALN influenced material properties at these bone sites following ODN or ALN treatment for 7 remodeling cycles in rabbits. ODN and ALN persistently reduced the bone resorption marker urinary helical peptide over study duration. While ALN reduced the bone formation marker BSAP, ODN treatment did not affect this marker. ODN also preserved histomorphometry-based bone formation indices in LV trabecular, CF endocortical and intracortical surfaces, at the levels of OVX+Veh. Discontinuation of ODN returned bone mass, structure and strength parameters to the comparable respective levels in OVX+Veh. Together, these data demonstrate efficacy and bone safety profile of ODN and suggests the potential long-term benefits of this agent over ALN with respect to accrued bone mass without long-term effects on bone formation. Copyright © 2016 Elsevier Inc. All rights reserved.

Wideband acoustic wave resonators composed of hetero acoustic layer structure

NASA Astrophysics Data System (ADS)

Kadota, Michio; Tanaka, Shuji

2018-07-01

“Hetero acoustic layer (HAL) surface acoustic wave (SAW) device” is a new type of SAW device using a single crystal piezoelectric thin plate supported by a substrate. In this study, a HAL SAW resonator using a LiNbO3 (LN) thin plate and a multi-layer acoustic film was designed by finite element method (FEM) and fabricated. The thickness of LN is 3.6 µm and the pitch of an interdigital transducer (IDT) (λ) is 5.24 µm for a resonance frequency of 600 MHz. The multi-layer acoustic film is composed of 3 layers of SiO2 and AlN for each, i.e., 6 layers in total, alternately deposited on a glass substrate. The HAL SAW resonator achieved a wide bandwidth of 20.3% and a high impedance ratio of 83 dB. Compared with a 0th shear horizontal (SH0) mode plate wave resonator, the performance is better and the thickness of LN is 7 times larger. The HAL SAW without a cavity is advantageous in terms of mechanical stability, thickness controllability and fabrication yield.

Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

PubMed

Ye, Fan; Lee, Jaesung; Feng, Philip X-L

2017-11-30

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Özaydın, C.; Güllü, Ö., E-mail: omergullu@gmail.com; Pakma, O.

2016-05-15

Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vismore » spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.« less

Contact Selectivity Engineering in a 2 μm Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8.

PubMed

Xue, Muyu; Islam, Raisul; Meng, Andrew C; Lyu, Zheng; Lu, Ching-Ying; Tae, Christian; Braun, Michael R; Zang, Kai; McIntyre, Paul C; Kamins, Theodore I; Saraswat, Krishna C; Harris, James S

2017-12-06

In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin crystalline silicon (c-Si) solar cells is demonstrated which results in an ∼13% relative improvement in efficiency. The improvement in efficiency originates from the suppression of the contact recombination current due to the band offset asymmetry of these oxides with Si. First, an ultrathin c-Si solar cell having a total thickness of 2 μm is shown to have >10% efficiency without any light-trapping scheme. This is achieved by the integration of nickel oxide (NiO x ) as a hole-selective contact interlayer material, which has a low valence band offset and high conduction band offset with Si. Second, we show a champion cell efficiency of 10.8% with the additional integration of titanium oxide (TiO x ), a well-known material for an electron-selective contact interlayer. Key parameters including V oc and J sc also show different degrees of enhancement if single (NiO x only) or double (both NiO x and TiO x ) carrier-selective contacts are integrated. The fabrication process for TiO x and NiO x layer integration is scalable and shows good compatibility with the device.

The role of the (111) texture on the exchange bias and interlayer coupling effects observed in sputtered NiFe/IrMn/Co trilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Castro, I. L.; Nascimento, V. P.; Passamani, E. C.

2013-05-28

Magnetic properties of sputtered NiFe/IrMn/Co trilayers grown on different seed layers (Cu or Ta) deposited on Si (100) substrates were investigated by magnetometry and ferromagnetic resonance measurements. Exchange bias effect and magnetic spring behavior have been studied by changing the IrMn thickness. As shown by X-ray diffraction, Ta and Cu seed layers provoke different degrees of (111) fcc-texture that directly affect the exchange bias and indirectly modify the exchange spring coupling behavior. Increasing the IrMn thickness, it was observed that the coupling angle between the Co and NiFe ferromagnetic layers increases for the Cu seed system, but it reduces formore » the Ta case. The results were explained considering (i) different anisotropies of the Co and IrMn layers induced by the different degree of the (111) texture and (ii) the distinct exchange bias set at the NiFe/IrMn and IrMn/Co interfaces in both systems. The NiFe and Co interlayer coupling angle is strongly correlated with both exchange bias and exchange magnetic spring phenomena. It was also shown that the highest exchange bias field occurs when an unstressed L1{sub 2} IrMn structure is stabilized.« less

Influence of Electrode Design and Contacting Layers on Performance of Electrolyte Supported SOFC/SOEC Single Cells.

PubMed

Kusnezoff, Mihails; Trofimenko, Nikolai; Müller, Martin; Michaelis, Alexander

2016-11-08

The solid oxide cell is a basis for highly efficient and reversible electrochemical energy conversion. A single cell based on a planar electrolyte substrate as support (ESC) is often utilized for SOFC/SOEC stack manufacturing and fulfills necessary requirements for application in small, medium and large scale fuel cell and electrolysis systems. Thickness of the electrolyte substrate, and its ionic conductivity limits the power density of the ESC. To improve the performance of this cell type in SOFC/SOEC mode, alternative fuel electrodes, on the basis of Ni/CGO as well as electrolytes with reduced thickness, have been applied. Furthermore, different interlayers on the air side have been tested to avoid the electrode delamination and to reduce the cell degradation in electrolysis mode. Finally, the influence of the contacting layer on cell performance, especially for cells with an ultrathin electrolyte and thin electrode layers, has been investigated. It has been found that Ni/CGO outperform traditional Ni/8YSZ electrodes and the introduction of a ScSZ interlayer substantially reduces the degradation rate of ESC in electrolysis mode. Furthermore, it was demonstrated that, for thin electrodes, the application of contacting layers with good conductivity and adhesion to current collectors improves performance significantly.

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

PubMed Central

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi2/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi2 conducting interlayer. The results show that the main emission properties were modified by varying the CoSi2 thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi2 interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi2 layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays. PMID:23082241

All-optical measurement of interlayer exchange coupling in Fe/Pt/FePt thin films

NASA Astrophysics Data System (ADS)

Berk, C.; Ganss, F.; Jaris, M.; Albrecht, M.; Schmidt, H.

2018-01-01

Time Resolved Magneto Optic Kerr Effect spectroscopy was used to all-optically study the dynamics in exchange coupled Fe(10 nm)/Pt(x = 0-5 nm)/FePt (10 nm) thin films. As the Pt spacer decreases, the effective magnetization of the layers is seen to evolve towards the strong coupling limit where the two films can be described by a single effective magnetization. The coupling begins at x = 1.5 nm and reaches a maximum exchange coupling constant of 2.89 erg/cm2 at x = 0 nm. The films are ferromagnetically coupled at all Pt thicknesses in the exchange coupled regime (x ≤ 1.5 nm). A procedure for extracting the interlayer exchange constant by measuring the magnetic precession frequencies at multiple applied fields and angles is outlined. The dynamics are well reproduced using micromagnetic simulations.

Joining of Silicon Carbide Through the Diffusion Bonding Approach

NASA Technical Reports Server (NTRS)

Halbig, Michael .; Singh, Mrityunjay

2009-01-01

In order for ceramics to be fully utilized as components for high-temperature and structural applications, joining and integration methods are needed. Such methods will allow for the fabrication the complex shapes and also allow for insertion of the ceramic component into a system that may have different adjacent materials. Monolithic silicon carbide (SiC) is a ceramic material of focus due to its high temperature strength and stability. Titanium foils were used as an interlayer to form diffusion bonds between chemical vapor deposited (CVD) SiC ceramics with the aid of hot pressing. The influence of such variables as interlayer thickness and processing time were investigated to see which conditions contributed to bonds that were well adhered and crack free. Optical microscopy, scanning electron microscopy, and electron microprobe analysis were used to characterize the bonds and to identify the reaction formed phases.

Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus

DOE PAGES

Dong, Shan; Zhang, Anmin; Liu, Kai; ...

2016-02-26

The recent renaissance of black phosphorus (BP) as a two-dimensional (2D) layered material has generated tremendous interest, but its unique structural characters underlying many of its outstanding properties still need elucidation. Here we report Raman measurements that reveal an ultralow-frequency collective compression mode (CCM) in BP, which is unprecedented among similar 2D layered materials. This novel CCM indicates an unusually strong interlayer coupling, and this result is quantitatively supported by a phonon frequency analysis and first-principles calculations. Moreover, the CCM and another branch of low-frequency Raman modes shift sensitively with changing number of layers, allowing an accurate determination of themore » thickness up to tens of atomic layers, which is considerably higher than previously achieved by using high-frequency Raman modes. Lastly, these findings offer fundamental insights and practical tools for further exploration of BP as a highly promising new 2D semiconductor.« less

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures.

PubMed

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi(2)/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi(2) conducting interlayer. The results show that the main emission properties were modified by varying the CoSi(2) thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi(2) interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi(2) layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays.

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

NASA Astrophysics Data System (ADS)

Fukushima, A.; Taniguchi, T.; Sugihara, A.; Yakushiji, K.; Kubota, H.; Yuasa, S.

2018-05-01

Perpendicularly magnetized magnetic tunnel junction (p-MTJ) is a key element for developing high-density spin-transfer torque switching magnetoresistive random access memory. Recently, a large exchange coupling (IEC) in the synthetic antiferromagnetic reference layer with Ir interlayer was observed in p-MTJs. The evaluation of the IEC is, however, difficult due to the electrostatic breakdown of MTJs. This study demonstrates the evaluation of the IEC with Ir interlayer in giant magnetoresistive (GMR) nanopillar. We fabricated three kinds of perpendicularly magnetized GMR elements; bottom-free structures with Cu or Ir spacer, and top-free structure with Ir spacer. The magnetoresistance (RH) loops of all samples show sharp changes of the magnetoresistance at the magnetic fields over ±10 kOe, indicating the existence of the large IECs. In particular, a sharp change of the magnetoresistance at the field over ±20 kOe was found for the element with Cu of 2 nm thickness.

Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

NASA Astrophysics Data System (ADS)

Jiang, Xin-He; Shi, Jun-Jie; Zhang, Min; Zhong, Hong-Xia; Huang, Pu; Ding, Yi-Min; He, Ying-Ping; Cao, Xiong

2015-12-01

To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)5/(GaN)1 superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy {{E}\\text{A}} , the formation energy {{E}\\text{f}} and the band gap {{E}\\text{g}} decrease with increasing the strain ɛ. The hydrostatic strain has a more remarkable impact on {{E}\\text{g}} and {{E}\\text{A}} than the biaxial strain. Both {{E}\\text{A}} and {{E}\\text{g}} have a linear dependence on the hydrostatic strain. For the biaxial strain, {{E}\\text{g}} shows a parabolic dependence on ɛ if \\varepsilon ≤slant 0 while it becomes linear if \\varepsilon ≥slant 0 . In GaN and (AlN)5/(GaN)1, {{E}\\text{A}} parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)5/(GaN)1 can be reduced from 0.26 eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.

Feasibility of using negative ultrasonography results of axillary lymph nodes to predict sentinel lymph node metastasis in breast cancer patients.

PubMed

Chen, Xue; He, Yingjian; Wang, Jiwei; Huo, Ling; Fan, Zhaoqing; Li, Jinfeng; Xie, Yuntao; Wang, Tianfeng; Ouyang, Tao

2018-06-14

Knowledge of the pathology of axillary lymph nodes (ALN) in breast cancer patients is critical for determining their treatment. Ultrasound is the best noninvasive evaluation for the ALN status. However, the correlation between negative ultrasound results and the sentinel lymph nodes (SLN) pathology remains unknown. To test the hypothesis that negative ultrasound results of ALN predict the negative pathology results of SLN in breast cancer patients, we assessed the association between ALN ultrasonography-negative results and the SLN pathology in 3115 patients with breast cancer recruited between October 2010 and April 2016 from a single cancer center, prospective database. Of these patients who met the inclusion criteria, 2317 (74.4%) had no SLN pathological metastasis. In the univariate analysis, other 798 patient with positive SLN tended to be under age 40 and premenopausal, having large tumor sizes (>2 cm), higher histological grade of primary tumor, positive hormone receptors, and negative HER-2 status (P < .05 for all). In the multivariate analysis, menstrual status, tumor size, ER status and histological types of primary tumor remained to be independent predictors for SLN pathological metastasis. The area under curve (AUC) was 0.658 (95% CI = 0.637-0.679), P > .05. In conclusion, only a 74.4% consistency between ALN ultrasonography-negative results and negative pathological SLN results, although menstrual status, tumor size, histologic subtypes of primary tumor and ER status were found to be statistically independent predictors of positive SLN among patients negative for ALN ultrasonography. Therefore, the present study suggests that negative ultrasound results of ALN do not adequately predict the negative pathology results of SLN in breast cancer patients. © 2018 The Authors. Cancer Medicine published by John Wiley & Sons Ltd.

A novel alginate-encapsulated system to study biological response to critical-sized wear particles of UHMWPE loaded with alendronate sodium.

PubMed

Liu, Yumei; Shi, Feng; Bo, Lin; Zhi, Wei; Weng, Jie; Qu, Shuxin

2017-10-01

The aim of this study was to develop a novel alginate-encapsulated system (Alg beads) to investigate the cell response to critical-sized wear particles of ultra-high molecular weight polyethylene loaded with alendronate sodium (UHMWPE-ALN), one of the most effective drugs to treat bone resorption in clinic. The extrusion method was used to prepare Alg beads encapsulating rat calvarial osteoblasts (RCOs) and critical-sized UHMWPE-ALN wear particles with spherical morphology and uniform size. The morphology, permeability and stability of Alg beads were characterized. The proliferation, ALP activity, cell apoptosis and distribution of live/dead RCOs co-cultured with wear particles in Alg beads were evaluated. RCOs and critical-sized UHMWPE-ALN wear particles distributed evenly and contacted efficiently in Alg beads. Alg beads were both permeable to trypsin and BSA, while the smaller the molecular was, the larger the diffuse was. The proliferation of RCOs in Alg beads increased with time, which indicated that Alg beads provided suitable conditions for cell culture. The long-term stability of Alg beads indicated the possibility for the longer time of co-cultured cells with wear particles. Critical-sized UHMWPE-ALN and UHMWPE wear particles both inhibited the proliferation and differentiation of RCOs, and induced the apoptosis of RCOs encapsulated in Alg beads. However, these effects could be significantly alleviated by the ALN released from the critical-sized UHMWPE-ALN wear particles. The present results suggested that this novel-developed co-culture system was feasible to evaluate the cell response to critical-sized UHMWPE-ALN wear particles for a longer time. Copyright © 2017 Elsevier B.V. All rights reserved.

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

DTIC Science & Technology

2013-02-01

Nord, J.; Albe, K.; Erhart, P.; Nordlund, K. Modelling of Compound Semiconductors: Analytical Bond-order Potential for Gallium , Nitrogen and Gallium ...Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

Electro-acoustic sensors based on AlN thin film: possibilities and limitations

NASA Astrophysics Data System (ADS)

Wingqvist, Gunilla

2011-06-01

The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device - the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the ScxAl1-xN (0

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

PubMed Central

Besleaga, Cristina; Dumitru, Viorel; Trinca, Liliana Marinela; Popa, Adrian-Claudiu; Negrila, Constantin-Catalin; Ionescu, Gabriela-Cristina; Ripeanu, Razvan-George; Stan, George E.

2017-01-01

Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials. PMID:29149061

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure.

PubMed

Besleaga, Cristina; Dumitru, Viorel; Trinca, Liliana Marinela; Popa, Adrian-Claudiu; Negrila, Constantin-Catalin; Kołodziejczyk, Łukasz; Luculescu, Catalin-Romeo; Ionescu, Gabriela-Cristina; Ripeanu, Razvan-George; Vladescu, Alina; Stan, George E

2017-11-17

Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c -axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

Postassembly chemical modification of a highly ordered organosilane multilayer: new insights into the structure, bonding, and dynamics of self-assembling silane monolayers.

PubMed

Wen, Ke; Maoz, Rivka; Cohen, Hagai; Sagiv, Jacob; Gibaud, Alain; Desert, Anne; Ocko, Benjamin M

2008-03-01

Experimental evidence derived from a comprehensive study of a self-assembled organosilane multilayer film system undergoing a process of postassembly chemical modification that affects interlayer-located polar groups of the constituent molecules while preserving its overall molecular architecture allows a quantitative evaluation of both the degree of intralayer polymerization and that of interlayer covalent bonding of the silane headgroups in a highly ordered layer assembly of this type. The investigated system consists of a layer-by-layer assembled multilayer of a bifunctional n-alkyl silane with terminal alcohol group that is in situ converted, via a wet chemical oxidation process conducted on the entire multilayer, to the corresponding carboxylic acid function. A combined chemical-structural analysis of data furnished by four different techniques, Fourier transform infrared spectroscopy (FTIR), synchrotron X-ray scattering, X-ray photoelectron spectroscopy (XPS), and contact angle measurements, demonstrates that the highly ordered 3D molecular arrangement of the initial alcohol-silane multilayer stack is well preserved upon virtually quantitative conversion of the alcohol to carboxylic acid and the concomitant irreversible cleavage of interlayer covalent bonds. Thus, the correlation of quantitative chemical and structural data obtained from such unreacted and fully reacted film samples offers an unprecedented experimental framework within which it becomes possible to differentiate between intralayer and interlayer covalent bonding. In addition, the use of a sufficiently thick multilayer effectively eliminates the interfering contributions of the underlying silicon oxide substrate to both the X-ray scattering and XPS data. The present findings contribute a firm experimental basis to the elucidation of the self-assembly mechanism, the molecular organization, and the modes and dynamics of intra- and interlayer bonding prevailing in highly ordered organosilane films; with further implications for the rational exploitation of some of the unique options such supramolecular surface entities can offer in the advancement of a chemical nanofabrication methodology.

Development of AlN and TiB2 Composites with Nb2O5, Y2O3 and ZrO2 as Sintering Aids

PubMed Central

González, José C.; Rodríguez, Miguel Á.; Figueroa, Ignacio A.; Villafuerte-Castrejón, María-Elena; Díaz, Gerardo C.

2017-01-01

The synthesis of AlN and TiB2 by spark plasma sintering (SPS) and the effect of Nb2O5, Y2O3 and ZrO2 additions on the mechanical properties and densification of the produced composites is reported and discussed. After the SPS process, dense AlN and TiB2 composites with Nb2O5, Y2O3 and ZrO2 were successfully prepared. X-ray diffraction analysis showed that in the AlN composites, the addition of Nb2O5 gives rise to Nb4N3 during sintering. The compound Y3Al5O12 (YAG) was observed as precipitate in the sample with Y2O3. X-ray diffraction analysis of the TiB2 composites showed TiB2 as a single phase in these materials. The maximum Vickers and toughness values were 14.19 ± 1.43 GPa and 27.52 ± 1.75 GPa for the AlN and TiB2 composites, respectively. PMID:28772681

Thermodynamics of inversion-domain boundaries in aluminum nitride: Interplay between interface energy and electric dipole potential energy

NASA Astrophysics Data System (ADS)

Zhang, J. Y.; Xie, Y. P.; Guo, H. B.; Chen, Y. G.

2018-05-01

Aluminum nitride (AlN) has a polar crystal structure that is susceptible to electric dipolar interactions. The inversion domains in AlN, similar to those in GaN and other wurtzite-structure materials, decrease the energy associated with the electric dipolar interactions at the expense of inversion-domain boundaries, whose interface energy has not been quantified. We study the atomic structures of six different inversion-domain boundaries in AlN, and compare their interface energies from density functional theory calculations. The low-energy interfaces have atomic structures with similar bonding geometry as those in the bulk phase, while the high-energy interfaces contain N-N wrong bonds. We calculate the formation energy of an inversion domain using the interface energy and dipoles' electric-field energy, and find that the distribution of the inversion domains is an important parameter for the microstructures of AlN films. Using this thermodynamic model, it is possible to control the polarity and microstructure of AlN films by tuning the distribution of an inversion-domain nucleus and by selecting the low-energy synthesis methods.

Cd ion implantation in AlN

NASA Astrophysics Data System (ADS)

Miranda, S. M. C.; Franco, N.; Alves, E.; Lorenz, K.

2012-10-01

AlN thin films were implanted with cadmium, to fluences of 1 × 1013 and 8 × 1014 at/cm2. The implanted samples were annealed at 950 °C under flowing nitrogen. Although implantation damage in AlN is known to be extremely stable the crystal could be fully recovered at low fluences. At high fluences the implantation damage was only partially removed. Implantation defects cause an expansion of the c-lattice parameter. For the high fluence sample the lattice site location of the ions was studied by Rutherford Backscattering/Channelling Spectrometry. Cd ions are found to be incorporated in substitutional Al sites in the crystal and no significant diffusion is seen upon thermal annealing. The observed high solubility limit and site stability are prerequisite for using Cd as p-type dopant in AlN.

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

PubMed

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Photochemical Formation and Transformation of Birnessite: Effects of Cations on Micromorphology and Crystal Structure.

PubMed

Zhang, Tengfei; Liu, Lihu; Tan, WenFeng; Suib, Steven L; Qiu, Guohong; Liu, Fan

2018-05-24

As important components with excellent oxidation and adsorption activity in soils and sediments, manganese oxides affect the transportation and fate of nutrients and pollutants in natural environments. In this work, birnessite was formed by photocatalytic oxidation of Mn2+aq in the presence of nitrate under solar irradiation. The effects of concentrations and species of interlayer cations (Na+, Mg2+, and K+) on birnessite crystal structure and micromorphology were investigated. The roles of adsorbed Mn2+ and pH in the transformation of the photosynthetic birnessite were further studied. The results indicated that Mn2+aq was oxidized to birnessite by superoxide radicals (O2•-) generated from the photolysis of NO3- under UV irradiation. The particle size and thickness of birnessite decreased with increasing cation concentration. The birnessite showed a plate-like morphology in the presence of K+, while exhibited a rumpled sheet-like morphology when Na+ or Mg2+ was used. The different micromorphologies of birnessites could be ascribed to the position of cations in the interlayer. The adsorbed Mn2+ and high pH facilitated the reduction of birnessite to low-valence manganese oxides including hausmannite, feitknechtite, and manganite. This study suggests that interlayer cations and Mn2+ play essential roles in the photochemical formation and transformation of birnessite in aqueous environments.

Ceramic-metal composite article and joining method

DOEpatents

Kang, Shinhoo; Selverian, John H.; Kim, Hans J.; Dunn, Edmund M.; Kim, Kyung S.

1992-01-01

A ceramic-metal article including a ceramic rod, a metal rod, and a braze joining the ceramic and metal rods at a braze area of a coaxial bore in the metal rod. The bore gradually decreases in diameter, having an inward seat area sized for close sliding fit about the ceramic, a larger brazing area near the joint end, and a void area intermediate the braze and seat areas. The ceramic is seated without brazing in the bore seat area. The side wall between the brazing area and the metal outer surface is about 0.030-0.080 inch. The braze includes an inner braze layer, an outer braze layer, and an interlayer about 0.030-0.090 inch thick. A shoulder between the brazing and void areas supports the interlayer during bonding while preventing bonding between the void area and the ceramic member, leaving a void space between the void area and the ceramic member. A venting orifice extends generally radially through the metal member from the outer surface to the void space. The braze layers are palladium, platinum, gold, silver, copper, nickel, indium, chromium, molybdenum, niobium, iron, aluminum, or alloys thereof. Preferred is a gold-palladium-nickel brazing alloy. The interlayer is nickel, molybdenum, copper, tantalum, tungsten, niobium, aluminum, cobalt, iron, or an alloy thereof.

Ceramic-metal composite article and joining method

DOEpatents

Kang, S.; Selverian, J.H.; Kim, H.J.; Dunn, E.M.; Kim, K.S.

1992-04-28

A ceramic-metal article including a ceramic rod, a metal rod, and a braze joining the ceramic and metal rods at a braze area of a coaxial bore in the metal rod is described. The bore gradually decreases in diameter, having an inward seat area sized for close sliding fit about the ceramic, a larger brazing area near the joint end, and a void area intermediate the braze and seat areas. The ceramic is seated without brazing in the bore seat area. The side wall between the brazing area and the metal outer surface is about 0.030-0.080 inch. The braze includes an inner braze layer, an outer braze layer, and an interlayer about 0.030-0.090 inch thick. A shoulder between the brazing and void areas supports the interlayer during bonding while preventing bonding between the void area and the ceramic member, leaving a void space between the void area and the ceramic member. A venting orifice extends generally radially through the metal member from the outer surface to the void space. The braze layers are palladium, platinum, gold, silver, copper, nickel, indium, chromium, molybdenum, niobium, iron, aluminum, or alloys thereof. Preferred is a gold-palladium-nickel brazing alloy. The interlayer is nickel, molybdenum, copper, tantalum, tungsten, niobium, aluminum, cobalt, iron, or an alloy thereof. 4 figs.

Mechanisms associated with the high adsorption of dibenzo-p-dioxin from water by smectite clays.

PubMed

Liu, Cun; Li, Hui; Teppen, Brian J; Johnston, Cliff T; Boyd, Stephen A

2009-04-15

Clay minerals may be an important unrecognized sorptive phase for dioxins in soils and clay deposits. Smectites, especially Cs-saponite, effectively adsorbed dibenzo-p-dioxin (DD) from water, reaching 0.8% (wt/wt). Adsorption was promoted by exchangeable cations with low hydration energies, and negative charge in the smectite arising from the tetrahedral siloxane sheets. X-ray diffraction measurements revealed that as DD loading increased to > or =8000 mg/kg the clay basal spacing increased abruptly from 12.3 to 15.2 A demonstrating DD intercalation. The 12.3 A spacing provides an interlayer distance that closely matches the molecular thickness of DD. In this configuration DD is essentially dehydrated as it interacts with the opposing hydrophobic siloxane sheets and with coplanar Cs+ via one of the dioxin ring oxygens. Ab initio calculations suggest that geometrical structures form at higher loadings in which intercalated DD molecules adopt a butterfly geometry sandwiched between dehydrated interlayer Cs+ and the siloxane surface, consistent with the 15.2 A spacing, wherein Cs+ interacts with dioxin ring oxygens and benzene ring pi-electrons. Fourier transformation infrared measurements confirm that adsorbed DD is present in orientations that are not parallel with the interlayer planar siloxane surfaces of smectite.

Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate

DOEpatents

Kline, Gerald R.; Lakin, Kenneth M.

1985-12-03

A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers.

Competitive growth mechanisms of AlN on Si (111) by MOVPE.

PubMed

Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan; Chen, Zhen; Wang, Lianshan; Kong, Susu; Zhao, Guijuan; Liu, Xianglin

2014-09-18

To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure.

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.

PubMed

Lin, Hui-Feng; Wu, Chun-Te; Chien, Wei-Cheng; Chen, Sheng-Wen; Kao, Hui-Ling; Chyi, Jen-Inn; Chen, Jyh-Shin

2005-05-01

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.

Properties of planar structures based on Policluster films of diamond and AlN

NASA Astrophysics Data System (ADS)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

Effect of topical alendronate on root resorption of dried replanted dog teeth.

PubMed

Levin, L; Bryson, E C; Caplan, D; Trope, M

2001-06-01

Alendronate (ALN) is a third generation bisphosphonate with demonstrated osteoclast inhibitory activity that may slow down the resorptive process after severe traumatic injuries. Eighty-two premolar roots of five mongrel dogs were endodontically treated and restored, extracted and treated as follows: 70 roots were bench dried for either 40 or 60 min. Thirty-eight of these roots were then soaked for 5 min in a 1 mM solution of ALN in Hanks' Balanced Salt Solution (HBSS) and replanted. Thirty-two roots were soaked for 5 min in HBSS and replanted. In the remaining 12 roots which were not exposed to the bench drying procedure, a 0.5 mM deep lingual mid-root cemental defect was made. Six of these roots were soaked in a 1 mM solution of ALN in HBSS for 5 min and replanted. The other six roots were soaked for 5 min in HBSS and replanted. Historical negative and positive controls were used from similarly treated teeth in our previous studies. After 4 months the dogs were killed and the roots prepared for histological evaluation. Five-microm-thick cross-sections of the root and surrounding tissue taken every 70 microm were evaluated for healing according to the criteria of Andreasen. In the 12 roots with cemental defects, healing with cementum of the damaged root surface was evaluated. In addition, residual root mass was also measured to determine the extent of root structure loss for each soaking method. Cemental healing took place in all 12 artificially damaged roots, indicating that these soaking media did not inhibit cementogenesis. The alendronate-soaked roots had statistically significantly more healing than the roots soaked in HBSS without alendronate. This improvement in healing was seen in all dogs except one and in all teeth except the first premolar. Soaking in alendronate also resulted in significantly less loss in root mass due to resorption compared to those teeth soaked in HBSS without alendronate.

Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates

NASA Astrophysics Data System (ADS)

Pan, Lei; Dong, Xun; Li, Zhonghui; Luo, Weike; Ni, Jinyu

2018-07-01

AlGaN/GaN heterostructures were grown on Si (1 1 1) substrates with different AlN nucleation layers (NL) by metal-organic chemical vapor deposition (MOCVD). The results indicate that the growth temperature of AlN NL has a noticeable influence on the structural, electronic and optical properties of the AlGaN/GaN heterostructures. Optimizing the growth temperature to 1040 °C led to quasi-2D smooth surface of the AlN NL with providing sufficient compressive stress to suppress cracking of the subsequent GaN layer during the cooling process, resulting in improved crystalline quality of GaN layer and superior two-dimensional electron gas (2DEG) performance of the AlGaN/GaN heterostructure.

Synthesis and evaluation of alendronate-modified gelatin biopolymer as a novel osteotropic nanocarrier for gene therapy.

PubMed

Mekhail, George M; Kamel, Amany O; Awad, Gehanne As; Mortada, Nahed D; Rodrigo, Rowena L; Spagnuolo, Paul A; Wettig, Shawn D

2016-09-01

To synthesize an osteotropic alendronate functionalized gelatin (ALN-gelatin) biopolymer for nanoparticle preparation and targeted delivery of DNA to osteoblasts for gene therapy applications. Alendronate coupling to gelatin was confirmed using Fourier transform IR, (31)PNMR, x-ray diffraction (XRD) and differential scanning calorimetry. ALN-gelatin biopolymers prepared at various alendronate/gelatin ratios were utilized to prepare nanoparticles and were optimized in combination with DNA and gemini surfactant for transfecting both HEK-293 and MG-63 cell lines. Gelatin functionalization was confirmed using the above methods. Uniform nanoparticles were obtained from a nanoprecipitation technique. ALN-gelatin/gemini/DNA complexes exhibited higher transfection efficiency in MG-63 osteosarcoma cell line compared with the positive control. ALN-gelatin is a promising biopolymer for bone targeting of either small molecules or gene therapy applications.

Effect of 1% sodium alendronate in the non-surgical treatment of periodontal intraosseous defects: a 6-month clinical trial

PubMed Central

DUTRA, Bernardo Carvalho; OLIVEIRA, Alcione Maria Soares Dutra; OLIVEIRA, Peterson Antônio Dutra; MANZI, Flavio Ricardo; CORTELLI, Sheila Cavalca; COTA, Luís Otávio de Miranda; COSTA, Fernando Oliveira

2017-01-01

Abstract Background and objectives Few studies have evaluated the effect of the topical application of sodium alendronate (ALN) on the treatment of intrabuccal bone defects, especially those caused by periodontitis. This 6-month randomized placebo controlled clinical trial aimed at evaluating the effect of non-surgical periodontal treatment associated with the use of 1% ALN, through clinical evaluations and cone-beam computed tomography (CBCT). Material and Methods Twenty individuals with chronic periodontitis underwent periodontal examination at the baseline as well as 3 and 6 months after periodontal treatment, registering clinical attachment level (CAL), periodontal probing depth (PPD), and bleeding on probing (BOP) as the clinical outcomes. After manual scaling and root planing, 40 bilateral sites with interproximal vertical bone defects were randomly treated with either 1% ALN gel or a placebo. Bone defects were evaluated through CBCT at the baseline and 6 months post-treatment. The clinical and CBCT parameters were compared using the Wilcoxon and Friedman tests (p<0.05). Results Although ALN produced a greater CAL gain when compared to the placebo at 6 months post-treatment (p=0.021), both treatments produced similar effects on the PPD, BOP, and bone height. Significant differences in bone fill were observed only in patients of the ALN group (4.5 to 3.8 mm; p=0.003) at 6 months post-treatment. Conclusions Topical application of 1% ALN might be a beneficial adjuvant to non-surgical periodontal therapy. PMID:28678950

Influence of high Mg doping on the microstructural and opto-electrical properties of AlGaN alloys

NASA Astrophysics Data System (ADS)

Xu, Qingjun; Zhang, Shiying; Liu, Bin; Tao, Tao; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Chen, Peng; Han, Ping; Zheng, Youdou; Zhang, Rong

2018-07-01

Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration ∼1020 cm-3. For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 × 1018 cm-3 and 0.56 cm2/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys.

Deep ultraviolet photoluminescence studies of aluminum-rich aluminum gallium nitride and aluminum nitride epilayers and nanostructures

NASA Astrophysics Data System (ADS)

Nepal, Neeraj

Deep ultraviolet (UV) photoluminescence (PL) spectroscopy has been employed to study optical properties of AlGaN alloys, undoped and doped AlN epilayers and nanostructure AlN photonics crystals (PCs). Using a deep UV laser system with an excitation wave length at 197 nm, continuous wave PL, temperature dependent, and time-resolved PL have been carried out on these AlGaN and AlN epilayers and nanostructures. We have measured the compositional and temperature dependence of the energy bandgap of AlxGa1-xN alloys covering the entire alloy range of x, 0 ≤ x ≤ 1 and fitted with the Varshni equation. Varshni coefficients, alpha and beta, in AlGaN alloys have a parabolic dependence with alloy concentration x. Based on the experimental data, an empirical relation was thus obtained for the energy gap of AlGaN alloys for the entire alloy concentration and at any temperature below 800 K. The exciton localization energy in AlxGa1-xN alloys the entire composition range (0 ≤ x ≤ 1) has been measured by fitting the band edge emission peak energy with the Varshni equation. Deviations of the excitonic emission peak energy from the Varshni equation at low temperatures provide directly the exciton localization energies, ELoc in AlGaN alloys. It was found that ELoc increases with x for x ≤ 0.7, and decreases with x for x ≥ 0.8. The relations between the exciton localization energy, the activation energy, and the emission linewidth have been established. It thus provides three different and independent methods to determine the exciton localization energies in AlGaN alloys. Impurity transitions in AlGaN alloys have also been investigated. Continuous wave (CW) PL spectra of Si and undoped AlGaN alloys reveals groups of impurity transitions that have been assigned to the recombination between shallow donors and an isolated triply charged cation-vacancy (VIII)3-, a doubly charged cation-vacancy-complex (VIII-complex)2- , and a singly charged cation-vacancy-complex (VIII-complex) -1. The energy levels of these deep acceptors in AlxGa 1-xN (0 ≤ x ≤ 1) alloys are pinned to a common energy level in the vacuum. AlGaN alloys predominantly exhibiting the bandedge and (V III-complex)1- transitions possess improved conductivities over those emitting predominantly (VIII)3- and (V III-complex)2- related transitions. These results thus answer the very basic question of high resistivity in Al-rich AlGaN alloys. Acceptor doped AlGaN alloys have been studied by deep UV PL. A PL emission line at 6.02 eV has been observed at 10 K in Mg-doped AlN. It is due to the recombination of an exciton bound to the neutral Mg acceptor (I1) with a binding energy, Ebx of 40 meV, which indicates large activation energy of the Mg acceptor. The observed large binding energy of the acceptor-bound exciton is consistent with relatively large binding energy of the Mg acceptor in AlN. With the energy level of 0.51 eV for Mg dopants in AlN, it is interesting and important to study other suitable acceptor dopants for AlN. Growth and optical studies of Zn-doped AlN epilayers has been carried out. The PL spectra of Zn-doped AlN epilayers exhibited two impurity emission lines at 5.40 and 4.50 eV, which were absent in undoped epilayers. They are assigned respectively, to the transitions of free electrons and electrons bound to triply positively charged nitrogen vacancies (0.90 eV deep) to the Zn0 acceptors. It was deduced that the Zn energy level is about 0.74 eV above the valence band edge, which is about 0.23 eV deeper than the Mg energy level in AlN. Nitrogen vacancies are the compensating defects in acceptor doped AlGaN alloys. A nitrogen vacancy (VN) related emission line was also observed in ion-implanted AlN at 5.87 eV and the energy level of singly charged VN1+ is found at 260 meV below the conduction band. As a consequence of large binding energy of VN 1+ as well as high formation energy, VN1+ in AlN cannot contribute significant n-type conductivity, which is consistent with experimental observation. The temperature dependent PL study of the bandedge emissions in GaN and AlN epilayers up to 800 K has been carried out, which reveals two distinctive activation processes. The first process occurring below Tt = 325 K (Tt = 500 K) for GaN (AlN) is due to the activation of free excitons to free carriers, whereas the second occurring above Tt with an activation energy of 0.29 eV (0.3 eV) for GaN (AlN) is believed to be associated with a higher lying conduction band (Gamma3) at about 0.3 eV above the conduction band minimum (Gamma1). These higher lying bands could affect device performance of GaN and AlN at elevated temperatures. Two-dimensional nanostructured AlN photonic crystals (PCs) with a varying periodicity/diameter down to 150 nm/75 nm have also been studied by deep UV PL. With PCs formation, a 20-fold enhancement in the band edge emission intensity at 208 nm over unpatterned AlN epilayer has been observed. The emission intensity increases with the decrease in the lattice constant of the AlN PCs. AlN PCs represent photonic crystals with highest (shortest) bandgap (wavelength) semiconductors, which open up new opportunities for exploring novel physical phenomena in the artificially structured photonic band gap material systems and their applications, particularly in the area of deep UV as well as nano-photonics.

Joining thick section aluminum to steel with suppressed FeAl intermetallic formation via friction stir dovetailing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reza-E-Rabby, Md.; Ross, Kenneth; Overman, Nicole R.

A new solid-phase technique called friction stir dovetailing (FSD) has been developed for joining thick section aluminum to steel. In FSD, mechanical interlocks are formed at the aluminum-steel interface and are reinforced by metallurgical bonds where intermetallic growth has been uniquely suppressed. Lap shear testing shows superior strength and extension at failure compared to popular friction stir approaches where metallurgical bonding is the only joining mechanism. High resolution microscopy revealed the presence of a 40-70 nm interlayer having a composition of 76.4 at% Al, 18.4 at% Fe, and 5.2 at% Si, suggestive of limited FeAl3 intermetallic formation.

Diffraction based overlay metrology for α-carbon applications

NASA Astrophysics Data System (ADS)

Saravanan, Chandra Saru; Tan, Asher; Dasari, Prasad; Goelzer, Gary; Smith, Nigel; Woo, Seouk-Hoon; Shin, Jang Ho; Kang, Hyun Jae; Kim, Ho Chul

2008-03-01

Applications that require overlay measurement between layers separated by absorbing interlayer films (such as α- carbon) pose significant challenges for sub-50nm processes. In this paper scatterometry methods are investigated as an alternative to meet these stringent overlay metrology requirements. In this article, a spectroscopic Diffraction Based Overlay (DBO) measurement technique is used where registration errors are extracted from specially designed diffraction targets. DBO measurements are performed on detailed set of wafers with varying α-carbon (ACL) thicknesses. The correlation in overlay values between wafers with varying ACL thicknesses will be discussed. The total measurement uncertainty (TMU) requirements for these layers are discussed and the DBO TMU results from sub-50nm samples are reviewed.

Ti{sub 2}AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabioch, Thierry, E-mail: Thierry.cabioch@univ-poitiers.fr; Alkazaz, Malaz; Beaufort, Marie-France

2016-08-15

Highlights: • Epitaxial thin films of the MAX phase Ti{sub 2}AlN are obtained by thermal annealing. • A new metastable (Ti,Al,N) solid solution with the structure of α-T is evidenced. • The formation of the MAX phase occurs at low temperature (600 °C). - Abstract: Single-phase Ti{sub 2}AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AlN multilayers deposited at room temperature by magnetron sputtering onto single-crystalline (0001) 4H-SiC and (0001) Al{sub 2}O{sub 3} substrates. In-situ X-ray diffraction experiments combined with ex-situ cross-sectional transmission electron microscopy observations reveal that interdiffusion processes occur in the multilayer at amore » temperature of ∼400 °C leading to the formation of a (Ti, Al, N) solid solution, having the hexagonal structure of α-Ti, whereas the formation of Ti{sub 2}AlN occurs at 550–600 °C. Highly oriented (0002) Ti{sub 2}AlN thin films can be obtained after an annealing at 750 °C.« less

Synthesis and Performance Evaluation of Pulse Electrodeposited Ni-AlN Nanocomposite Coatings

PubMed Central

Ali, Kamran; Narayana, Sivaprasad; Okonkwo, Paul C.; Yusuf, Moinuddin M.; Alashraf, Abdullah

2018-01-01

This research work presents the microscopic analysis of pulse electrodeposited Ni-AlN nanocomposite coatings using SEM and AFM techniques and their performance evaluation (mechanical and electrochemical) by employing nanoindentation and electrochemical methods. The Ni-AlN nanocomposite coatings were developed by pulse electrodeposition. The nickel matrix was reinforced with various amounts of AlN nanoparticles (3, 6, and 9 g/L) to develop Ni-AlN nanocomposite coatings. The effect of reinforcement concentration on structure, surface morphology, and mechanical and anticorrosion properties was studied. SEM and AFM analyses indicate that Ni-AlN nanocomposite coatings have dense, homogenous, and well-defined pyramid structure containing uniformly distributed AlN particles. A decent improvement in the corrosion protection performance is also observed by the addition of AlN particles to the nickel matrix. Corrosion current was reduced from 2.15 to 1.29 μA cm−2 by increasing the AlN particles concentration from 3 to 9 g/L. It has been observed that the properties of Ni-AlN nanocomposite coating are sensitive to the concentration of AlN nanoparticles used as reinforcement. PMID:29619143

Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kaun, Stephen W.; Mazumder, Baishakhi; Fireman, Micha N.; Kyle, Erin C. H.; Mishra, Umesh K.; Speck, James S.

2015-05-01

When grown at a high temperature (820 °C) by ammonia-based molecular beam epitaxy (NH3-MBE), the AlN layers of metal-polar AlGaN/AlN/GaN heterostructures had a high GaN mole fraction (∼0.15), as identified by atom probe tomography in a previous study (Mazumder et al 2013 Appl. Phys. Lett. 102 111603). In the study presented here, growth at low temperature (<740 °C) by NH3-MBE yielded metal-polar AlN layers that were essentially pure at the alloy level. The improved purity of the AlN layers grown at low temperature was correlated to a dramatic increase in the sheet density of the two-dimensional electron gas (2DEG) at the AlN/GaN heterointerface. Through application of an In surfactant, metal-polar AlN(3.5 nm)/GaN and AlGaN/AlN(2.5 nm)/GaN heterostructures grown at low temperature yielded low 2DEG sheet resistances of 177 and 285 Ω/□, respectively.

Electronic Structure and Surface Physics of Two-dimensional Material Molybdenum Disulfide

NASA Astrophysics Data System (ADS)

Jin, Wencan

The interest in two-dimensional materials and materials physics has grown dramatically over the past decade. The family of two-dimensional materials, which includes graphene, transition metal dichalcogenides, phosphorene, hexagonal boron nitride, etc., can be fabricated into atomically thin films since the intralayer bonding arises from their strong covalent character, while the interlayer interaction is mediated by weak van der Waals forces. Among them, molybdenum disulfide (MoS2) has attracted much interest for its potential applications in opto-electronic and valleytronics devices. Previously, much of the experimental studies have concentrated on optical and transport measurements while neglecting direct experimental determination of the electronic structure of MoS2, which is crucial to the full understanding of its distinctive properties. In particular, like other atomically thin materials, the interactions with substrate impact the surface structure and morphology of MoS2, and as a result, its structural and physical properties can be affected. In this dissertation, the electronic structure and surface structure of MoS2 are directly investigated using angle-resolved photoemission spectroscopy and cathode lens microscopy. Local-probe angle-resolved photoemission spectroscopy measurements of monolayer, bilayer, trilayer, and bulk MoS 2 directly demonstrate the indirect-to-direct bandgap transition due to quantum confinement as the MoS2 thickness is decreased from multilayer to monolayer. The evolution of the interlayer coupling in this transition is also investigated using density functional theory calculations. Also, the thickness-dependent surface roughness is characterized using selected-area low energy electron diffraction (LEED) and the surface structural relaxation is investigated using LEED I-V measurements combined with dynamical LEED calculations. Finally, bandgap engineering is demonstrated via tuning of the interlayer interactions in van der Waals interfaces by twisting the relative orientation in bilayer-MoS2 and graphene-MoS 2-heterostructure systems.

Cubic GaN quantum dots embedded in zinc-blende AlN microdisks

NASA Astrophysics Data System (ADS)

Bürger, M.; Kemper, R. M.; Bader, C. A.; Ruth, M.; Declair, S.; Meier, C.; Förstner, J.; As, D. J.

2013-09-01

Microresonators containing quantum dots find application in devices like single photon emitters for quantum information technology as well as low threshold laser devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks including cubic GaN quantum dots using dry chemical etching techniques. Scanning electron microscopy analysis reveals the morphology with smooth surfaces of the microdisks. Micro-photoluminescence measurements exhibit optically active quantum dots. Furthermore this is the first report of resonator modes in the emission spectrum of a cubic AlN microdisk.

Impact and Blast Resistance of Sandwich Plates

NASA Astrophysics Data System (ADS)

Dvorak, George J.; Bahei-El-Din, Yehia A.; Suvorov, Alexander P.

Response of conventional and modified sandwich plate designs is examined under static load, impact by a rigid cylindrical or flat indenter, and during and after an exponential pressure impulse lasting for 0.05 ms, at peak pressure of 100 MPa, simulating a nearby explosion. The conventional sandwich design consists of thin outer (loaded side) and inner facesheets made of carbon/epoxy fibrous laminates, separated by a thick layer of structural foam core. In the three modified designs, one or two thin ductile interlayers are inserted between the outer facesheet and the foam core. Materials selected for the interlayers are a hyperelas-tic rate-independent polyurethane;a compression strain and strain rate dependent, elastic-plastic polyurea;and an elastomeric foam. ABAQUS and LS-Dyna software were used in various response simulations. Performance comparisons between the enhanced and conventional designs show that the modified designs provide much better protection against different damage modes under both load regimes. After impact, local facesheet deflection, core compression, and energy release rate of delamination cracks, which may extend on hidden interfaces between facesheet and core, are all reduced. Under blast or impulse loads, reductions have been observed in the extent of core crushing, facesheet delaminations and vibration amplitudes, and in overall deflections. Similar reductions were found in the kinetic energy and in the stored and dissipated strain energy. Although strain rates as high as 10-4/s1 are produced by the blast pressure, peak strains in the interlayers were too low to raise the flow stress in the polyurea to that in the polyurethane, where a possible rate-dependent response was neglected. Therefore, stiff polyurethane or hard rubber interlayers materials should be used for protection of sandwich plate foam cores against both impact and blast-induced damage.

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

NASA Astrophysics Data System (ADS)

Bryan, Isaac; Bryan, Zachary; Washiyama, Shun; Reddy, Pramod; Gaddy, Benjamin; Sarkar, Biplab; Breckenridge, M. Hayden; Guo, Qiang; Bobea, Milena; Tweedie, James; Mita, Seiji; Irving, Douglas; Collazo, Ramon; Sitar, Zlatko

2018-02-01

In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the "knee behavior" in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range.

Towards AlN optical cladding layers for thermal management in hybrid lasers

NASA Astrophysics Data System (ADS)

Mathews, Ian; Lei, Shenghui; Nolan, Kevin; Levaufre, Guillaume; Shen, Alexandre; Duan, Guang-Hua; Corbett, Brian; Enright, Ryan

2015-06-01

Aluminium Nitride (AlN) is proposed as a dual function optical cladding and thermal spreading layer for hybrid ridge lasers, replacing current benzocyclobutene (BCB) encapsulation. A high thermal conductivity material placed in intimate contact with the Multi-Quantum Well active region of the laser allows rapid heat removal at source but places a number of constraints on material selection. AlN is considered the most suitable due to its high thermal conductivity when deposited at low deposition temperatures, similar co-efficient of thermal expansion to InP, its suitable refractive index and its dielectric nature. We have previously simulated the possible reduction in the thermal resistance of a hybrid ridge laser by replacing the BCB cladding material with a material of higher thermal conductivity of up to 319 W/mK. Towards this goal, we demonstrate AlN thin-films deposited by reactive DC magnetron sputtering on InP.

Energy structure and radiative lifetimes of InxGa1-xN /AlN quantum dots

NASA Astrophysics Data System (ADS)

Aleksandrov, Ivan A.; Zhuravlev, Konstantin S.

2018-01-01

We report calculations of the ground state transition energies and the radiative lifetimes in InxGa1-xN /AlN quantum dots with different size and indium content. The ground state transition energy and the radiative lifetime of the InxGa1-xN /AlN quantum dots can be varied over a wide range by changing the height of the quantum dot and the indium content. The sizes and compositions for quantum dots emitting in the wavelength range for fiber-optic telecommunications have been found. The radiative lifetime of the InxGa1-xN /AlN quantum dots increases with increase in quantum dot height at a constant indium content, and increases with increase in indium content at constant quantum dot height. For quantum dots with constant ground state transition energy the radiative lifetime decreases with increase in indium content.

Mechanical and tribological properties of crystalline aluminum nitride coatings deposited on stainless steel by magnetron sputtering

NASA Astrophysics Data System (ADS)

Choudhary, R. K.; Mishra, S. C.; Mishra, P.; Limaye, P. K.; Singh, K.

2015-11-01

Aluminum nitride (AlN) coating is a potential candidate for addressing the problems of MHD pressure drop, tritium permeation and liquid metal corrosion of the test blanket module of fusion reactor. In this work, AlN coatings were grown on stainless steel by magnetron sputtering. Grazing incidence X-ray diffraction measurement revealed that formation of mixed phase (wurtzite and rock salt) AlN was favored at low discharge power and substrate negative biasing. However, at sufficiently high discharge power and substrate bias, (100) oriented wurtzite AlN was obtained. Secondary ion mass spectroscopy showed presence of oxygen in the coatings. The highest value of hardness and Young's modulus were 14.1 GPa and 215 GPa, respectively. Scratch test showed adhesive failure at a load of about 20 N. Wear test showed improved wear resistance of the coatings obtained at higher substrate bias.

A particle swarm-based algorithm for optimization of multi-layered and graded dental ceramics.

PubMed

Askari, Ehsan; Flores, Paulo; Silva, Filipe

2018-01-01

The thermal residual stresses (TRSs) generated owing to the cooling down from the processing temperature in layered ceramic systems can lead to crack formation as well as influence the bending stress distribution and the strength of the structure. The purpose of this study is to minimize the thermal residual and bending stresses in dental ceramics to enhance their strength as well as to prevent the structure failure. Analytical parametric models are developed to evaluate thermal residual stresses in zirconia-porcelain multi-layered and graded discs and to simulate the piston-on-ring test. To identify optimal designs of zirconia-based dental restorations, a particle swarm optimizer is also developed. The thickness of each interlayer and compositional distribution are referred to as design variables. The effect of layers number constituting the interlayer between two based materials on the performance of graded prosthetic systems is also investigated. The developed methodology is validated against results available in literature and a finite element model constructed in the present study. Three different cases are considered to determine the optimal design of graded prosthesis based on minimizing (a) TRSs; (b) bending stresses; and (c) both TRS and bending stresses. It is demonstrated that each layer thickness and composition profile have important contributions into the resulting stress field and magnitude. Copyright © 2017 Elsevier Ltd. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Retamal, María J., E-mail: moretama@uc.cl; Cisternas, Marcelo A.; Seifert, Birger

The recent combination of nanoscale developments with biological molecules for biotechnological research has opened a wide field related to the area of biosensors. In the last years, device manufacturing for medical applications adapted the so-called bottom-up approach, from nanostructures to larger devices. Preparation and characterization of artificial biological membranes is a necessary step for the formation of nano-devices or sensors. In this paper, we describe the formation and characterization of a phospholipid bilayer (dipalmitoylphosphatidylcholine, DPPC) on a mattress of a polysaccharide (Chitosan) that keeps the membrane hydrated. The deposition of Chitosan (∼25 Å) and DPPC (∼60 Å) was performed frommore » the gas phase in high vacuum onto a substrate of Si(100) covered with its native oxide layer. The layer thickness was controlled in situ using Very High Resolution Ellipsometry (VHRE). Raman spectroscopy studies show that neither Chitosan nor DPPC molecules decompose during evaporation. With VHRE and Atomic Force Microscopy we have been able to detect phase transitions in the membrane. The presence of the Chitosan interlayer as a water reservoir is essential for both DPPC bilayer formation and stability, favoring the appearance of phase transitions. Our experiments show that the proposed sample preparation from the gas phase is reproducible and provides a natural environment for the DPPC bilayer. In future work, different Chitosan thicknesses should be studied to achieve a complete and homogeneous interlayer.« less

Development of X-ray laser media. Measurement of gain and development of cavity resonators for wavelengths near 130 angstroms, volume 3

NASA Astrophysics Data System (ADS)

Forsyth, J. M.

1983-02-01

In this document the authors summarize our investigation of the reflecting properties of X-ray multilayers. The breadth of this investigation indicates the utility of the difference equation formalism in the analysis of such structure. The formalism is particularly useful in analyzing multilayers whose structure is not a simple periodic bilayer. The complexity in structure can be either intentional, as in multilayers made by in-situ reflectance monitoring, or it can be a consequence of a degradation mechanism, such as random thickness errors or interlayer diffusion. Both the analysis of thickness errors and the analysis of interlayer diffusion are conceptually simple, effectively one dimensional problems that are straightforwared to pose. In the authors analysis of in-situ reflectance monitoring, they provide a quantitative understanding of an experimentally successful process that has not previously been treated theoretically. As X-ray multilayers come into wider use, there will undoubtedly be an increasing need for a more precise understanding of their reflecting properties. Thus, it is expected that in the future more detailed modeling will be undertaken of less easily specified structures than those above. The authors believe that their formalism will continue to prove useful in the modeling of these more complex structures. One such structure that may be of interest is that of a multilayer degraded by interfacial roughness.

Nonoscillatory behavior in the magnetoresistance of Cu/Ni superlattice (abstract)

NASA Astrophysics Data System (ADS)

Abdul-Razzaq, W.

1994-05-01

It was reported that in many magnetic/nonmagnetic metallic multilayered systems, the interlayer-coupling oscillates between antiferromagnetic and ferromagnetic upon increasing the thickness of the nonmagnetic layer. This was evident by the oscillation of the magnetoresistance (MR) in these materials. Recently however, Harp, Parkin et al.1 found that the MR and coupling strength change monotonically with increasing Cu thickness in Co/Cu multilayers deposited by MBE, contradicting results on similar samples made by sputtering in which the MR was oscillatory. In this study, we show that in the Cu/Ni superlattice made by sputtering, the MR varies monotonically with increasing Cu thickness. This nonoscillatory behavior was observed at room temperature and at 77 K and, regardless of the direction of the magnetic field in relation to the direction of the current. The resistivity at zero magnetic field as a function of temperature also changes systematically with reducing the Cu layer thickness. The nature of the magnetic state in Cu/Ni superlattice is discussed in light of the transport property measurements.

Effect of alendronate on post-traumatic osteoarthritis induced by anterior cruciate ligament rupture in mice.

PubMed

Khorasani, Mohammad S; Diko, Sindi; Hsia, Allison W; Anderson, Matthew J; Genetos, Damian C; Haudenschild, Dominik R; Christiansen, Blaine A

2015-02-16

Previous studies in animal models of osteoarthritis suggest that alendronate (ALN) has antiresorptive and chondroprotective effects, and can reduce osteophyte formation. However, these studies used non-physiologic injury methods, and did not investigate early time points during which bone is rapidly remodeled prior to cartilage degeneration. The current study utilized a non-invasive model of knee injury in mice to investigate the effect of ALN treatment on subchondral bone changes, articular cartilage degeneration, and osteophyte formation following injury. Non-invasive knee injury via tibial compression overload or sham injury was performed on a total of 90 mice. Mice were treated with twice weekly subcutaneous injections of low-dose ALN (40 μg/kg/dose), high-dose ALN (1,000 μg/kg/dose), or vehicle, starting immediately after injury until sacrifice at 7, 14 or 56 days. Trabecular bone of the femoral epiphysis, subchondral cortical bone, and osteophyte volume were quantified using micro-computed tomography (μCT). Whole-joint histology was performed at all time points to analyze articular cartilage and joint degeneration. Blood was collected at sacrifice, and serum was analyzed for biomarkers of bone formation and resorption. μCT analysis revealed significant loss of trabecular bone from the femoral epiphysis 7 and 14 days post-injury, which was effectively prevented by high-dose ALN treatment. High-dose ALN treatment was also able to reduce subchondral bone thickening 56 days post-injury, and was able to partially preserve articular cartilage 14 days post-injury. However, ALN treatment was not able to reduce osteophyte formation at 56 days post-injury, nor was it able to prevent articular cartilage and joint degeneration at this time point. Analysis of serum biomarkers revealed an increase in bone resorption at 7 and 14 days post-injury, with no change in bone formation at any time points. High-dose ALN treatment was able to prevent early trabecular bone loss and cartilage degeneration following non-invasive knee injury, but was not able to mitigate long-term joint degeneration. These data contribute to understanding the effect of bisphosphonates on the development of osteoarthritis, and may support the use of anti-resorptive drugs to prevent joint degeneration following injury, although further investigation is warranted.

The influence of design parameters on the performance of FBAR in 10-14 GHz

NASA Astrophysics Data System (ADS)

Nor, N. I. M.; Osman, R. A. M.; Idris, M. S.; Khalid, N.; Mohamad Isa, M.; Ahmad, N.; Mat Isa, Siti S.; Ramli, Muhammad M.; Kasjoo, S. R.

2017-11-01

This research presents the analysis of the influence of design parameters on the performance of film bilk acoustic wave resonator (FBAR) working from 10 GHz to 14 GHz. The analysis is done by implementing one-dimensional (1-D) modellings, which are 1-D Mason model and Butterworth Van Dyke (BVD) model. The physical parameters such as piezoelectric materials and its thickness, and size of area affecting the characteristics of the FBAR are analyzed in detail. Zinc oxide (ZnO) and aluminum nitride (AlN) are chosen as the piezoelectric materials. The resonance area is varied at 25μm×25μm to 35μm×35μm. From the analysis, it is found that as the frequency increases, the thickness of the piezoelectric material decreases. Meanwhile, the static capacitance increases as the frequency increases. It is also found that as the area increases, the electrical impedance and static capacitance also increases.

Manufacturing and testing VLPC hybrids

NASA Astrophysics Data System (ADS)

Adkins, L. R.; Ingram, C. M.; Anderson, E. J.

1998-11-01

To insure that the manufacture of VLPC devices is a reliable, cost-effective technology, hybrid assembly procedures and testing methods suitable for large scale production have been developed. This technology has been developed under a contract from Fermilab as part of the D-Zero upgrade program. Each assembled hybrid consists of a VLPC chip mounted on an AlN substrate. The VLPC chip is provided with bonding pads (one connected to each pixel) which are wire bonded to gold traces on the substrate. The VLPC/AlN hybrids are mated in a vacuum sealer using solder preforms and a specially designed carbon boat. After mating, the VLPC pads are bonded to the substrate with an automatic wire bonder. Using this equipment we have achieved a thickness tolerance of ±0.0007 inches and a production rate of 100 parts per hour. After assembly the VLPCs are tested for optical response at an operating temperature of 7K. The parts are tested in a custom designed continuous-flow dewar with a capacity 15 hybrids, and one Lake Shore DT470-SD-11 calibrated temperature sensor mounted to an AlN substrate. Our facility includes five of these dewars with an ultimate test capacity of 75 parts per day. During the course of the Dzero program we have assembled more than 4,000 VLPC hybrids and have tested more than 2,500 with a high yield.

Treatment of Radix Dipsaci extract prevents long bone loss induced by modeled microgravity in hindlimb unloading rats.

PubMed

Niu, Yinbo; Li, Chenrui; Pan, Yalei; Li, Yuhua; Kong, Xianghe; Wang, Shuo; Zhai, YuanKun; Wu, Xianglong; Fan, Wutu; Mei, Qibing

2015-01-01

Radix Dipsaci is a kidney tonifying herbal medicine with a long history of safe use for treatment of bone fractures and joint diseases in China. Previous studies have shown that Radix Dipsaci extract (RDE) could prevent bone loss in ovariectomized rats. This study investigates the effect of RDE against bone loss induced by simulated microgravity. A hindlimb unloading rat model was established to determine the effect of RDE on bone mineral density and bone microarchitecture. Twenty-four male Sprague-Dawley rats were divided into four groups (n = 6 per group): control (CON), hindlimb unloading with vehicle (HLU), hindlimb unloading treated with alendronate (HLU-ALN, 2.0 mg/kg/d), and hindlimb unloading treated with RDE (HLU-RDE, 500 mg/kg/d). RDE or ALN was administrated orally for 4 weeks. Treatment with RDE had a positive effect on mechanical strength, BMD, BMC, bone turnover markers, and the changes in urinary calcium and phosphorus excretion. MicroCT analysis showed that RDE significantly prevented the reduction of the bone volume fraction, connectivity density, trabecular number, thickness, tissue mineral density, and tissue mineral content as well as improved the trabecular separation and structure model index. RDE was demonstrated to prevent the loss of bone mass induced by HLU treatment, which suggests the potential application of RDE in the treatment of microgravity-induced bone loss.

Ultra-violet avalanche photodiode based on AlN/GaN periodically-stacked-structure

NASA Astrophysics Data System (ADS)

Wu, Xingzhao; Zheng, Jiyuan; Wang, Lai; Brault, Julien; Matta, Samuel; Hao, Zhibiao; Sun, Changzheng; Xiong, Bing; Luo, Yi; Han, Yianjun; Wang, Jian; Li, Hongtao; Khalfioui, Mohamed A.; Li, Mo; Kang, Jianbin; Li, Qian

2018-02-01

The high-gain photomultiplier tube (PMT) is the most popular method to detect weak ultra-violet signals which attenuate quickly in atmosphere, although the vacuum tube makes it fragile and difficult to integrate. To overcome the disadvantage of PMT, an AlN/GaN periodically-stacked-structure (PSS) avalanche photodiode (APD) has been proposed, finally achieving good quality of high gain and low excessive noise. As there is a deep g valley only in the conduction band of both GaN and AlN, the electron transfers suffering less scattering and thus becomes easier to obtain the threshold of ionization impact. Because of unipolar ionization in the PSS APD, it works in linear mode. Four prototype devices of 5-period, 10-period, 15-period, and 20-period were fabricated to verify that the gain of APD increases exponentially with period number. And in 20-period device, a recorded high and stable gain of 104 was achieved under constant bias. In addition, it is proved both experimentally and theoretically, that temperature stability on gain is significantly improved in PSS APD. And it is found that the resonant enhancement in interfacial ionization may bring significant enhancement of electron ionization performance. To make further progress in PSS APD, the device structure is investigated by simulation. Both the gain and temperature stability are optimized alternatively by a proper design of periodical thickness and AlN layer occupancy.

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

NASA Astrophysics Data System (ADS)

Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

2015-04-01

InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z 0.38) IL is 1-2 nm thick, and is grown after and at the same growth temperature as the 3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a 10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to 0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

Theoretical Studies of Nanocluster Formation

DTIC Science & Technology

2016-05-26

background, technical approach 2. Core-shell nanoclusters (Mg/Cu, Si/Al, etc.) - energetic additives for propellants , explosives - gas generators...shell nanocluster synthesis Core-shell nanoclusters such as SiAln, NinAlm, Aln(CuO)m, etc. may be useful ingredients in propellants and explosives

Native defect properties and p -type doping efficiency in group-IIA doped wurtzite AlN

NASA Astrophysics Data System (ADS)

Zhang, Yong; Liu, Wen; Niu, Hanben

2008-01-01

Using the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p -type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that nitrogen vacancies (VN) have low formation energies and introduce deep donor levels in wurtzite AlN, while in zinc blende AlN and GaN, these levels are reported to be shallow. The calculated acceptor levels γ(0/-) for substitutional Be (BeAl) , Mg (MgAl) , and Ca (CaAl) are 0.48, 0.58, and 0.95eV , respectively. In p -type AlN, Be interstitials (Bei) , which act as donors, have low formation energies, making them a likely compensating center in the case of acceptor doping. Whereas, when N-rich growth conditions are applied, Bei are energetically not favorable. It is found that p -type doping efficiency of substitutional Be, Mg, and Ca impurities in w-AlN is affected by atomic size and electronegativity of dopants. Among the three dopants, Be may be the best candidate for p -type w-AlN . N-rich growth conditions help us to increase the concentration of BeAl , MgAl , and CaAl .

Synthesis of Nano-Size AlN Powders by Carbothermal Reduction from Plasma-Assisted Ball Milling Precursor

NASA Astrophysics Data System (ADS)

Liu, Zhijie; Wang, Wenchun; Yang, Dezheng; Wang, Sen; Dai, Leyang

2016-07-01

Nano-size aluminum nitride (AlN) powders have been successfully synthesized with a high efficiency method through annealing from milling assisted by discharge plasma (p-milling) alumina (Al2O3) precursors. The characterization of the p-milling Al2O3 powders and the synthesized AlN are investigated. Compared to conventional ball milling (c-milling), it can be found that the precursors by p-milling have a finer grain size with a higher specific surface area, which lead to a faster reaction efficiency and higher conversion to AlN at lower temperatures. The activation energy of p-milling Al2O3 is found to be 371.5 kJ/mol, a value that is much less than the reported value of the unmilled and the conventional milled Al2O3. Meanwhile, the synthesized AlN powders have unique features, such as an irregular lamp-like morphology with uniform particle distribution and fine average particle size. The results are attributed to the unique synergistic effect of p-milling, which is the effect of deformation, fracture, and cold welding of Al2O3 powders resulting from ball milling, that will be enhanced due to the introduction of discharge plasma. supported by National Natural Science Foundation of China (No. 51177008)

Development and Characterization of the Bonding and Integration Technologies Needed for Fabricating Silicon Carbide Based Injector Components

NASA Technical Reports Server (NTRS)

Halbig,Michael C.; Singh, Mrityunjay

2008-01-01

Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding technology, titanium interlayers (coatings and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness, and processing time were investigated. Electron microprobe analysis was used to identify the reaction formed phases. In the diffusion bonds, an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner interlayers of pure titanium and/or longer processing times resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Nondestructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

Observing Imperfection in Atomic Interfaces for van der Waals Heterostructures.

PubMed

Rooney, Aidan P; Kozikov, Aleksey; Rudenko, Alexander N; Prestat, Eric; Hamer, Matthew J; Withers, Freddie; Cao, Yang; Novoselov, Kostya S; Katsnelson, Mikhail I; Gorbachev, Roman; Haigh, Sarah J

2017-09-13

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross-sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS 2 or WS 2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe 2 and WSe 2 , our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN interfaces that are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe 2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two-dimensional (2D) crystal NbSe 2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glovebox transfer significantly improves the quality of interfaces for WSe 2 compared to processing in air.

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Müller, Marcus; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Juergen; Morkoç, Hadis

2015-03-01

Enhancement of optical and structural quality of semipolar (11‾22) GaN grown by metal-organic chemical vapor deposition on planar m-sapphire substrates was achieved by using an in-situ epitaxial lateral overgrowth (ELO) technique with nanoporous SiNx layers employed as masks. In order to optimize the procedure, the effect of SiNx deposition time was studied by steady-state photoluminescence (PL), and X-ray diffraction. The intensity of room temperature PL for the (11‾22) GaN layers grown under optimized conditions was about three times higher compared to those for the reference samples having the same thickness but no SiNx interlayers. This finding is attributed to the blockage of extended defect propagation toward the surface by the SiNx interlayers as evidenced from the suppression of emissions associated with basal-plane and prismatic stacking faults with regard to the intensity of donor bound excitons (D0X) in lowtemperature PL spectra. In agreement with the optical data, full width at half maximum values of (11‾22) X-ray rocking curves measured for two different in-plane rotational orientations of [1‾100] and [11‾23] reduced from 0.33º and 0.26º for the reference samples to 0.2º and 0.16º for the nano-ELO structures grown under optimized conditions, respectively.

Controllably Designed "Vice-Electrode" Interlayers Harvesting High Performance Lithium Sulfur Batteries.

PubMed

Hao, Youchen; Xiong, Dongbin; Liu, Wen; Fan, Linlin; Li, Dejun; Li, Xifei

2017-11-22

An interlayer has been regarded as a promising mediator to prolong the life span of lithium sulfur batteries because its excellent absorbability to soluble polysulfide efficiently hinders the shuttle effect. Herein, we designed various interlayers and understand the working mechanism of an interlayer for lithium sulfur batteries in detail. It was found that the electrochemical performance of a S electrode for an interlayer located in cathode side is superior to the pristine one without interlayers. Surprisingly, the performance of the S electrode for an interlayer located in anode side is poorer than that of pristine one. For comparison, glass fibers were also studied as a nonconductive interlayer for lithium sulfur batteries. Unlike the two interlayers above, these nonconductive interlayer did displays significant capacity fading because polysulfides were adsorbed onto insulated interlayer. Thus, the nonconductive interlayer function as a "dead zone" upon cycling. Based on our findings, it was for the first time proposed that a controllably optimized interlayer, with electrical conductivity as well as the absorbability of polysulfides, may function as a "vice-electrode" of the anode or cathode upon cycling. Therefore, the cathodic conductive interlayer can enhance lithium sulfur battery performance, and the anodic conductive interlayer may be helpful for the rational design of 3D networks for the protection of lithium metal.

Barium: An Efficient Cathode Layer for Bulk-heterojunction Solar Cells

PubMed Central

Gupta, Vinay; Kyaw, Aung Ko Ko; Wang, Dong Hwan; Chand, Suresh; Bazan, Guillermo C.; Heeger, Alan J.

2013-01-01

We report Barium (Ba) cathode layer for bulk-heterojunction solar cells which enhanced the fill factor (FF) of p-DTS(FBTTh2)2/PC71BM BHJ solar cell up to 75.1%, one of the highest value reported for an organic solar cell. The external quantum efficiency exceeds 80%. Analysis of recombination mechanisms using the current-voltage (J–V) characteristics at various light intensities in the BHJ solar cell layer reveals that Ba prevents trap assisted Shockley-Read-Hall (SRH) recombination at the interface and with different thicknesses of the Ba, the recombination shifts towards bimolecular from monomolecular. Moreover, Ba increases shunt resistance and decreases the series resistance significantly. This results in an increase in the charge collection probability leading to high FF. This work identifies a new cathode interlayer which outclasses the all the reported interlayers in increasing FF leading to high power conversion efficiency and have significant implications in improving the performance of BHJ solar cells. PMID:23752562

Spin valves with spin-engineered domain-biasing scheme

NASA Astrophysics Data System (ADS)

Lu, Z. Q.; Pan, G.

2003-06-01

Synthetic spin-filter spin valves with spin-engineered biasing scheme "sub/Ta/NiFe/IrMn/NiFe/NOL/Cu1/CoFe/Cu2/CoFe/Ru/CoFe/IrMn/Ta" were developed. In the structure, the orthogonal magnetic configuration for biasing and pinning field was obtained by one-step magnetic annealing process by means of spin flop, which eliminated the need for two antiferromagnetic materials with distinctively different blocking temperatures and two-step magnetic annealing as in conventional exchange biasing scheme. The longitudinal domain biasing of spin valves was achieved by using interlayer coupling field through Cu1 spacer. By adjusting the thickness of the Cu1 layer, the interlayer coupling biasing field can provide domain stabilization and was sufficiently strong to constrain the magnetization in coherent rotation. This can prevent Barkhausen noises associated with magnetization reversal. We report here a proof of concept study of such a domain-biasing scheme, which has its important technological applications in nanoscale spin valve and magnetic tunneling junction read heads and other spintronic devices.

Integration of transmissible organic electronic devices for sensor application

NASA Astrophysics Data System (ADS)

Tam, Hoi Lam; Wang, Xizu; Zhu, Furong

2013-09-01

A high performance proximity sensor that integrates a front semitransparent organic photodiode (OPD) and an organic light-emitting diode (OLED) is demonstrated. A 0.3-nm-thick plasma-polymerized fluorocarbon film (CFX)-modified thin silver interlayer, serving simultaneously as a semitransparent cathode for the OPD and an anode for OLED, is used to vertically connect the functional organic electronic components. A microcavity OLED is formed between a semitransparent Ag/CFX interlayer and the rear Al cathode enhancing the forward electroluminescence emission in the integrated device. The semitransparent-OPD/OLED stack is designed using an optical admittance analysis method. In the integrated sensor, the front semitransparent OPD component enables a high transmission of light emitted by the integrated OLED unit and a high absorption when light is reflected from objects, thereby to increase the signal/noise ratio. The design and fabrication flexibility of an integrated semitransparent-OPD/OLED device also has cost benefit, making it possible for application in organic proximity sensors.

Coupling between graphene and intersubband collective excitations in quantum wells

NASA Astrophysics Data System (ADS)

Gonzalez de la Cruz, G.

2017-08-01

Recently, strong light-matter coupling between the electromagnetic modes in plasmonic metasurfaces with quantum-engineering electronic intersubband transitions in quantum wells has been demonstrated experimentally (Benz et al., [14], Lee et al., [15]). These novel materials combining different two-dimensional electronic systems offer new opportunities for tunable optical devices and fundamental studies of collective excitations driven by interlayer Coulomb interactions. In this work, our aim is to study the plasmon spectra of a hybrid structure consisting of conventional two-dimensional electron gas (2DEG) in a semiconductor quantum well and a graphene sheet with an interlayer separation of a. This electronic bilayer structure is immersed in a nonhomgeneous dielectric background of the system. We use a simple model in which the graphene surface plasmons and both; the intrasubband and intersubband collective electron excitations in the quantum well are coupled via screened Coulomb interaction. Here we calculate the dispersion of these relativistic/nonrelativistic new plasmon modes taking into account the thickness of the quantum well providing analytical expressions in the long-wavelength limit.

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Juho; Song, Kwangsun; Kim, Namyun

2016-06-20

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric powermore » similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.« less

Fine Structure Study of the Plasma Coatings B4C-Ni-P

NASA Astrophysics Data System (ADS)

Kornienko, E. E.; Bezrukova, V. A.; Kuz'min, V. I.; Lozhkin, V. S.; Tutunkova, M. K.

2017-12-01

The article considers structure of coatings formed of the B4C-Ni-P powder. The coatings were deposited using air-plasma spraying with the unit for annular injection of powder. The pipes from steel 20 (0.2 % C) were used as a substrate. The structure and phase composition of the coatings were studied by optical microscopy, scanning electron microscopy, transmission electron microscopy and X-ray diffractometry. It is shown that high-density composite coatings consisting of boron carbide particles distributed in the nickel boride metal matrix are formed using air-plasma spraying. The areas with round inclusions characterized by the increased amount of nickel, phosphorus and boron are located around the boron carbide particles. Boron oxides and nickel oxides are also present in the coatings. Thin interlayers with amorphous-crystalline structure are formed around the boron carbide particles. The thickness of these interlayers does not exceed 1 μm. The metal matrix material represents areas with nanocrystalline structure and columnar crystals.

Low-Frequency Shear and Layer-Breathing Modes in Raman Scattering of Two-Dimensional Materials.

PubMed

Liang, Liangbo; Zhang, Jun; Sumpter, Bobby G; Tan, Qing-Hai; Tan, Ping-Heng; Meunier, Vincent

2017-12-26

Ever since the isolation of single-layer graphene in 2004, two-dimensional layered structures have been among the most extensively studied classes of materials. To date, the pool of two-dimensional materials (2DMs) continues to grow at an accelerated pace and already covers an extensive range of fascinating and technologically relevant properties. An array of experimental techniques have been developed and used to characterize and understand these properties. In particular, Raman spectroscopy has proven to be a key experimental technique, thanks to its capability to identify minute structural and electronic effects in nondestructive measurements. While high-frequency (HF) intralayer Raman modes have been extensively employed for 2DMs, recent experimental and theoretical progress has demonstrated that low-frequency (LF) interlayer Raman modes are more effective at determining layer numbers and stacking configurations and provide a unique opportunity to study interlayer coupling. These advantages are due to 2DMs' unique interlayer vibration patterns where each layer behaves as an almost rigidly moving object with restoring forces corresponding to weak interlayer interactions. Compared to HF Raman modes, the relatively small attention originally devoted to LF Raman modes is largely due to their weaker signal and their proximity to the strong Rayleigh line background, which previously made their detection challenging. Recent progress in Raman spectroscopy with technical and hardware upgrades now makes it possible to probe LF modes with a standard single-stage Raman system and has proven crucial to characterize and understand properties of 2DMs. Here, we present a comprehensive and forward-looking review on the current status of exploiting LF Raman modes of 2DMs from both experimental and theoretical perspectives, revealing the fundamental physics and technological significance of LF Raman modes in advancing the field of 2DMs. We review a broad array of materials, with varying thickness and stacking configurations, discuss the effect of in-plane anisotropy, and present a generalized linear chain model and interlayer bond polarizability model to rationalize the experimental findings. We also discuss the instrumental improvements of Raman spectroscopy to enhance and separate LF Raman signals from the Rayleigh line. Finally, we highlight the opportunities and challenges ahead in this fast-developing field.

High density submicron magnetoresistive random access memory (invited)

NASA Astrophysics Data System (ADS)

Tehrani, S.; Chen, E.; Durlam, M.; DeHerrera, M.; Slaughter, J. M.; Shi, J.; Kerszykowski, G.

1999-04-01

Various giant magnetoresistance material structures were patterned and studied for their potential as memory elements. The preferred memory element, based on pseudo-spin valve structures, was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer. The difference in thickness results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions. It was found that a lower switching current can be achieved when the bits have a word line that wraps around the bit 1.5 times. Submicron memory elements integrated with complementary metal-oxide-semiconductor (CMOS) transistors maintained their characteristics and no degradation to the CMOS devices was observed. Selectivity between memory elements in high-density arrays was demonstrated.

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

PubMed

Chen, Ying; Emanetoglu, Nuri William; Saraf, Gaurav; Wu, Pan; Lu, Yicheng; Parekh, Aniruddh; Merai, Vinod; Udovich, Eric; Lu, Dong; Lee, Dong S; Armour, Eric A; Pophristic, Milan

2005-07-01

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

Ab initio molecular dynamics simulations of AlN responding to low energy particle radiation

DOE PAGES

Xi, Jianqi; Liu, Bin; Zhang, Yanwen; ...

2018-01-30

Ab initio molecular dynamics simulations of low energy recoil events in wurtzite AlN have been performed to determine threshold displacement energies, defect production and evolution mechanisms, role of partial charge transfer during the process, and the influence of irradiation-induced defects on the properties of AlN. Here, the results show that the threshold displacement energies, E d, along the direction parallel to the basal planes are smaller than those perpendicular to the basal planes. The minimum E d values are determined to be 19 eV and 55 eV for N and Al atom, respectively, which occur along the [more » $$\\overline{11}20$$] direction. In general, the threshold displacement energies for N are smaller than those for Al atom, indicating the N defects would be dominant under irradiation. The defect production mechanisms have been analyzed. It is found that charge transfer and redistribution for both the primary knock-on atom and the subsequent recoil atoms play a significant role in defect production and evolution. Similar to the trend in oxide materials, there is a nearly linear relationship between E d and the total amount of charge transfer at the potential energy peak in AlN, which provides guidance on the development of charge-transfer interatomic potentials for classic molecular dynamics simulations. Finally, the response behavior of AlN to low energy irradiation is qualitatively investigated. The existence of irradiation-induced defects significantly modifies the electronic structure, and thus affects the magnetic, electronic and optical properties of AlN. In conclusion, these findings further enrich the understanding of defects in the wide bandgap semiconductor of AlN.« less

The electronic structures of AlN and InN wurtzite nanowires

NASA Astrophysics Data System (ADS)

Xiong, Wen; Li, Dong-Xiao

2017-07-01

We derive the relations between the analogous seven Luttinger-Kohn parameters and six Rashba-Sheka-Pikus parameters for wurtzite semiconductors, which can be used to investigate the electronic structures of some wurtzite semiconductors such as AlN and InN materials, including their low-dimensional structures. As an example, the electronic structures of AlN and InN nanowires are calculated by using the derived relations and six-band effective-mass k · p theory. Interestingly, it is found that the ground hole state of AlN nanowires is always a pure S state whether the radius R is small (1 nm) or large (6 nm), and the ground hole state only contains | Z 〉 Bloch orbital component. Therefore, AlN nanowires is the ideal low-dimensional material for the production of purely linearly polarized π light, unlike ZnO nanowires, which emits plane-polarized σ light. However, the ground hole state of InN nanowires can be tuned from a pure S state to a mixed P state when the radius R is larger than 2.6 nm, which will make the polarized properties of the lowest optical transition changes from linearly polarized π light to plane-polarized σ light. Meanwhile, the valence band structures of InN nanowires will present strong band-crossings when the radius R increases to 6 nm, and through the detail analysis of possible transitions of InN nanowires at the Γ point, we find some of the neighbor optical transitions are almost degenerate, because the spin-orbit splitting energy of InN material is only 0.001 eV. Therefore, it is concluded that the electronic structures and optical properties of InN nanowires present great differences with that of AlN nanowires.

Ab initio molecular dynamics simulations of AlN responding to low energy particle radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xi, Jianqi; Liu, Bin; Zhang, Yanwen

Ab initio molecular dynamics simulations of low energy recoil events in wurtzite AlN have been performed to determine threshold displacement energies, defect production and evolution mechanisms, role of partial charge transfer during the process, and the influence of irradiation-induced defects on the properties of AlN. Here, the results show that the threshold displacement energies, E d, along the direction parallel to the basal planes are smaller than those perpendicular to the basal planes. The minimum E d values are determined to be 19 eV and 55 eV for N and Al atom, respectively, which occur along the [more » $$\\overline{11}20$$] direction. In general, the threshold displacement energies for N are smaller than those for Al atom, indicating the N defects would be dominant under irradiation. The defect production mechanisms have been analyzed. It is found that charge transfer and redistribution for both the primary knock-on atom and the subsequent recoil atoms play a significant role in defect production and evolution. Similar to the trend in oxide materials, there is a nearly linear relationship between E d and the total amount of charge transfer at the potential energy peak in AlN, which provides guidance on the development of charge-transfer interatomic potentials for classic molecular dynamics simulations. Finally, the response behavior of AlN to low energy irradiation is qualitatively investigated. The existence of irradiation-induced defects significantly modifies the electronic structure, and thus affects the magnetic, electronic and optical properties of AlN. In conclusion, these findings further enrich the understanding of defects in the wide bandgap semiconductor of AlN.« less

Bone microenvironment-mediated resistance of cancer cells to bisphosphonates and impact on bone osteocytes/stem cells.

PubMed

Alasmari, Abeer; Lin, Shih-Chun; Dibart, Serge; Salih, Erdjan

2016-08-01

Anti-resorptive bisphosphonates (BPs) have been clinically used to prevent cancer-bone metastasis and cancer-induced bone pathologies despite the fact that the phenotypic response of the cancer-bone interactions to BP exposure is "uncharted territory". This study offers unique insights into the interplay between cancer stem cells and osteocytes/osteoblasts and mesenchymal stem cells using a three-dimensional (3D) live cancer-bone interactive model. We provide extraordinary cryptic details of the biological events that occur as a result of alendronate (ALN) treatment using 3D live cancer-bone model systems under specific bone remodeling stages. While cancer cells are susceptible to BP treatment in the absence of bone, they are totally unaffected in the presence of bone. Cancer cells colonize live bone irrespective of whether the bone is committed to bone resorption or formation and hence, cancer-bone metastasis/interactions are though to be "independent of bone remodeling stages". In our 3D live bone model systems, ALN inhibited bone resorption at the osteoclast differentiation level through effects of mineral-bound ALN on osteocytes and osteoblasts. The mineral-bound ALN rendered bone incapable of osteoblast differentiation, while cancer cells colonize the bone with striking morphological adaptations which led to a conclusion that a direct anti-cancer effect of BPs in a "live or in vivo" bone microenvironment is implausible. The above studies were complemented with mass spectrometric analysis of the media from cancer-bone organ cultures in the absence and presence of ALN. The mineral-bound ALN impacts the bone organs by limiting transformation of mesenchymal stem cells to osteoblasts and leads to diminished endosteal cell population and degenerated osteocytes within the mineralized bone matrix.

μCT-based, in vivo dynamic bone histomorphometry allows 3D evaluation of the early responses of bone resorption and formation to PTH and alendronate combination therapy.

PubMed

de Bakker, Chantal M J; Altman, Allison R; Tseng, Wei-Ju; Tribble, Mary Beth; Li, Connie; Chandra, Abhishek; Qin, Ling; Liu, X Sherry

2015-04-01

Current osteoporosis treatments improve bone mass by increasing net bone formation: anti-resorptive drugs such as bisphosphonates block osteoclast activity, while anabolic agents such as parathyroid hormone (PTH) increase bone remodeling, with a greater effect on formation. Although these drugs are widely used, their role in modulating formation and resorption is not fully understood, due in part to technical limitations in the ability to longitudinally assess bone remodeling. Importantly, it is not known whether or not PTH-induced bone formation is independent of resorption, resulting in controversy over the effectiveness of combination therapies that use both PTH and an anti-resorptive. In this study, we developed a μCT-based, in vivo dynamic bone histomorphometry technique for rat tibiae, and applied this method to longitudinally track changes in bone resorption and formation as a result of treatment with alendronate (ALN), PTH, or combination therapy of both PTH and ALN (PTH+ALN). Correlations between our μCT-based measures of bone formation and measures of bone formation based on calcein-labeled histology (r=0.72-0.83) confirm the accuracy of this method. Bone remodeling parameters measured through μCT-based in vivo dynamic bone histomorphometry indicate an increased rate of bone formation in rats treated with PTH and PTH+ALN, together with a decrease in bone resorption measures in rats treated with ALN and PTH+ALN. These results were further supported by traditional histology-based measurements, suggesting that PTH was able to induce bone formation while bone resorption was suppressed. Copyright © 2014 Elsevier Inc. All rights reserved.

Gas-Phase Combustion Synthesis of Aluminum Nitride Powder

NASA Technical Reports Server (NTRS)

Axelbaum, R. L.; Lottes, C. R.; Huertas, J. I.; Rosen, L. J.

1996-01-01

Due to its combined properties of high electrical resistivity and high thermal conductivity aluminum nitride (AlN) is a highly desirable material for electronics applications. Methods are being sought for synthesis of unagglomerated, nanometer-sized powders of this material, prepared in such a way that they can be consolidated into solid compacts having minimal oxygen content. A procedure for synthesizing these powders through gas-phase combustion is described. This novel approach involves reacting AlCl3, NH3, and Na vapors. Equilibrium thermodynamic calculations show that 100% yields can be obtained for these reactants with the products being AlN, NaCl, and H2. The NaCl by-product is used to coat the AlN particles in situ. The coating allows for control of AlN agglomeration and protects the powders from hydrolysis during post-flame handling. On the basis of thermodynamic and kinetic considerations, two different approaches were employed to produce the powder, in co-flow diffusion flame configurations. In the first approach, the three reactants were supplied in separate streams. In the second, the AlCl3 and NH3 were premixed with HCl and then reacted with Na vapor. X-ray diffraction (XRD) spectra of as-produced powders show only NaCl for the first case and NaCl and AlN for the second. After annealing at 775 C tinder dynamic vacuum, the salt was removed and XRD spectra of powders from both approaches show only AlN. Aluminum metal was also produced in the co-flow flame by reacting AlCl3 with Na. XRD spectra of as-produced powders show the products to be only NaCl and elemental aluminum.

Structural transformations and properties of titanium-aluminum composite during heat treatment

NASA Astrophysics Data System (ADS)

Pervukhin, L. B.; Kryukov, D. B.; Krivenkov, A. O.; Chugunov, S. N.

2017-08-01

The link between the parameters of heat treatment of a layered titanium-aluminum composite material obtained by explosive welding with the formation of intermetallic compounds in it has been analyzed. The results of measurements of the microhardness of the composite and the thickness of the interlayer of the intermetallic phase obtained using different regimes of heat treatment have been discussed. Special attention has been paid to estimating the composition of the intermetallic phase in the composite prepared by explosive welding.

Hydrogen sorption in Pd-decorated Mg-MgO core-shell nanoparticles

NASA Astrophysics Data System (ADS)

Callini, E.; Pasquini, L.; Piscopiello, E.; Montone, A.; Antisari, M. Vittori; Bonetti, E.

2009-06-01

Mg nanoparticles with metal-oxide core-shell morphology were synthesized by inert-gas condensation and decorated by in situ Pd deposition. Transmission electron microscopy and x-ray diffraction underline the formation of a noncontinuous layer with Pd clusters on top of the MgO shell. Even in the presence of a thick MgO interlayer, a modest (2 at. %) Pd decoration deeply enhances the hydrogen sorption properties: previously inert nanoparticles exhibit metal-hydride transformation with fast kinetics and gravimetric capacity above 5 wt %.

Influence of aluminium nitride as a foaming agent on the preparation of foam glass-ceramics from high-titanium blast furnace slag

NASA Astrophysics Data System (ADS)

Shi, Huan; Feng, Ke-qin; Wang, Hai-bo; Chen, Chang-hong; Zhou, Hong-ling

2016-05-01

To effectively reuse high-titanium blast furnace slag (TS), foam glass-ceramics were successfully prepared by powder sintering at 1000°C. TS and waste glass were used as the main raw materials, aluminium nitride (AlN) as the foaming agent, and borax as the fluxing agent. The influence of the amount of AlN added (1wt%-5wt%) on the crystalline phases, microstructure, and properties of the produced foam glass-ceramics was studied. The results showed that the main crystal phases were perovskite, diopside, and augite. With increasing AlN content, a transformation from diopside to augite occurred and the crystallinity of the pyroxene phases slightly decreased. Initially, the average pore size and porosity of the foam glass-ceramics increased and subsequently decreased; similarly, their bulk density and compressive strength decreased and subsequently increased. The optimal properties were obtained when the foam glass-ceramics were prepared by adding 4wt% AlN.

Mechanical and Thermophysical Properties of Cubic Rock-Salt AlN Under High Pressure

NASA Astrophysics Data System (ADS)

Lebga, Noudjoud; Daoud, Salah; Sun, Xiao-Wei; Bioud, Nadhira; Latreche, Abdelhakim

2018-03-01

Density functional theory, density functional perturbation theory, and the Debye model have been used to investigate the structural, elastic, sound velocity, and thermodynamic properties of AlN with cubic rock-salt structure under high pressure, yielding the equilibrium structural parameters, equation of state, and elastic constants of this interesting material. The isotropic shear modulus, Pugh ratio, and Poisson's ratio were also investigated carefully. In addition, the longitudinal, transverse, and average elastic wave velocities, phonon contribution to the thermal conductivity, and interesting thermodynamic properties were predicted and analyzed in detail. The results demonstrate that the behavior of the elastic wave velocities under increasing hydrostatic pressure explains the hardening of the corresponding phonons. Based on the elastic stability criteria under pressure, it is found that AlN with cubic rock-salt structure is mechanically stable, even at pressures up to 100 GPa. Analysis of the Pugh ratio and Poisson's ratio revealed that AlN with cubic rock-salt structure behaves in brittle manner.

Elevated Temperature Compressive Strength Properties of Oxide Dispersion Strengthened NiAl After Cryo-milling and Roasting in Nitrogen

NASA Technical Reports Server (NTRS)

Whittenberger, J. Daniel; Grahle, Peter; Arzt, Eduard; Hebsur, Mohan

1998-01-01

In an effort to superimpose two different elevated temperature strengthening mechanisms in NiAl, several lots of oxide dispersion strengthened (ODS) NiAl powder have been cryo-milled in liquid nitrogen to introduce AlN particles at the grain boundaries. As an alternative to cryo-milling, one lot of ODS NiAl was roasted in nitrogen to produce AlN. Both techniques resulted in hot extruded AlN-strengthened, ODS NiAl alloys which were stronger than the base ODS NiAl between 1200 and 1400 K. However, neither the cryo-milled nor the N2-roasted ODS NiAl alloys were as strong as cryo-milled binary NiAl containing like amounts of AlN. The reason(s) for the relative weakness of cryo-milled ODS NiAl is not certain; however the lack of superior strength in N2-roasted ODS NiAl is probably due to its relatively large AlN particles.

Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Takenaka, Kosuke; Satake, Yoshikatsu; Uchida, Giichiro; Setsuhara, Yuichi

2018-01-01

The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.

Facile synthesis and characterisation of AlNs using Protein Rich Solution extracted from sewage sludge and its application for ultrasonic assisted dye adsorption: Isotherms, kinetics, mechanism and RSM design.

PubMed

Mary Ealias, Anu; Saravanakumar, M P

2018-01-15

Protein Rich Solution (PRS) was prepared from the sewage sludge with ultrasonic assistance. With PRS, aluminium based nanosheet like materials (AlNs) were synthesised for the ultrasonic removal of Congo Red (CR) and Crystal Violet (CV) dyes. PRS was characterised by UV, EEM and NMR spectral analysis. AlNs were characterised by FTIR, XRD, TGA, BET, SEM, AFM, TEM and XPS analysis. The point of zero charge of AlNs was found to be 5.4. The BET analysis ensured that the average pore diameter and total pore volume of AlNs as 8.464 nm and 0.11417 cc/g respectively. The efficacy of AlNs for the removal of toxic dyes was tested by performing Response surface methodology (RSM) designed experiments. The effect of sonication time, dosage and initial concentration on dye removal was studied at an optimised pH value. Langmuir, Freundlich and Temkin isotherm models were examined. The maximum adsorption capacity was found to be 121.951 and 105.263 mg/g for CR and CV respectively. The kinetic models like pseudo-first order, pseudo-second order, Elovich and intra-particle diffusion were examined to understand the mechanism behind it. The results revealed that the use of ultrasonication enhanced the mass transfer. The experimental studies on the influence of ultrasound power indicated a positive relation with the removal efficiency. The results of thermodynamic study revealed that the process was spontaneous and exothermic for both the dyes. The increase in ionic strength increased the removal efficiency for both CR and CV. RSM predicted the optimum adsorbent dosages as 0.16 g for 50 mg/L of CR and 0.12 g for 100 mg/L of CV dye solutions. The values of half-life and fractional adsorption for both CR and CV suggested that the low cost AlNs has high potential to remove the toxic industrial dyes. Copyright © 2017 Elsevier Ltd. All rights reserved.

Vitamin D, osteoprotegerin/receptor activator of nuclear factor-kappaB ligand (OPG/RANKL) and inflammation with alendronate treatment in HIV-infected patients with reduced bone mineral density.

PubMed

Natsag, J; Kendall, M A; Sellmeyer, D E; McComsey, G A; Brown, T T

2016-03-01

The aim of the study was to determine the effect of alendronate (ALN) on inflammatory markers and osteoprotegerin (OPG)/receptor activator of nuclear factor-kappaB ligand (RANKL), and to explore the associations of baseline systemic inflammation and vitamin D status on the bone mineral density (BMD) response to ALN. Eighty-two HIV-positive patients with lumbar spine T-score ≤ -1.5 were randomized to ALN 70 mg weekly or placebo for 48 weeks; all received calcium carbonate 500 mg/vitamin D3 200 IU twice daily. Serum C-telopeptide (CTx) and BMD were assessed at baseline and week 48. Stored plasma samples in 70 subjects were assayed for levels of 25-hydroxyvitamin D (25(OH)D), OPG, RANKL, interleukin (IL)-6 and soluble receptors for tumour necrosis factor (TNF)-α 1 and 2 (sTNFR 1 and 2). ALN increased BMD more than placebo at both the lumbar spine (difference ALN - placebo 2.64%; P = 0.011) and the total hip (difference 2.27%; P = 0.016). No within- or between-arm differences in OPG, RANKL or inflammatory markers were observed over 48 weeks. High baseline CTx and sTNFR2 were associated with a more robust BMD response to ALN over 48 weeks at the lumbar spine [difference 5.66%; 95% confidence interval (CI) 3.50, 7.82; P < 0.0001] and total hip (difference 4.99%; 95% CI 2.40, 7.57; P = 0.0002), respectively. Baseline 25(OH)D < 32 ng/mL was associated with larger increases in total hip BMD over 48 weeks, independent of ALN treatment (P = 0.014). Among HIV-positive patients, higher baseline bone resorption and TNF-α activity were associated with an increased BMD response to ALN. The greater BMD response in those with lower vitamin D reinforces the importance of vitamin D supplementation with bisphosphonate treatment. © 2015 British HIV Association.

Growth and stress-induced transformation of zinc blende AlN layers in Al-AlN-TiN multilayers

DOE PAGES

Li, Nan; Yadav, Satyesh K.; Wang, Jian; ...

2015-12-18

We report that AlN nanolayers in sputter deposited {111}Al/AlN/TiN multilayers exhibit the metastable zinc-blende-structure (z-AlN). Based on density function theory calculations, the growth of the z-AlN is ascribed to the kinetically and energetically favored nitridation of the deposited aluminium layer. In situ nanoindentation of the as-deposited {111}Al/AlN/TiN multilayers in a high-resolution transmission electron microscope revealed the z-AlN to wurzite AlN phase transformation through collective glide of Shockley partial dislocations on every two {111} planes of the z-AlN.

Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces

NASA Astrophysics Data System (ADS)

Lymperakis, L.

2018-06-01

Density functional theory calculations are employed to investigate B incorporation at the GaN(0001) and AlN(0001) surfaces. It is found that under typical metal-organic chemical vapor deposition (MOCVD) and metal rich molecular beam epitaxy (MBE) conditions, the maximum B contents at the surfaces are in the order of 3% for GaN and 15% for AlN. Under MBE N-rich growth conditions the calculations reveal a rehybridization enhanced solubility mechanism that dominates at the surface. This mechanism offers a promising route to kinetically stabilize B contents above the bulk solubility limit and as high as 25%.

Band gap and electronic structure of MgSiN2

NASA Astrophysics Data System (ADS)

Quirk, J. B.; Râsander, M.; McGilvery, C. M.; Palgrave, R.; Moram, M. A.

2014-09-01

Density functional theory calculations and electron energy loss spectroscopy indicate that the electronic structure of ordered orthorhombic MgSiN2 is similar to that of wurtzite AlN. A band gap of 5.7 eV was calculated for both MgSiN2 (indirect) and AlN (direct) using the Heyd-Scuseria-Ernzerhof approximation. Correction with respect to the experimental room-temperature band gap of AlN indicates that the true band gap of MgSiN2 is 6.2 eV. MgSiN2 has an additional direct gap of 6.3 eV at the Γ point.

AlN based piezoelectric micromirror.

PubMed

Shao, Jian; Li, Qi; Feng, Chuhuan; Li, Wei; Yu, Hongbin

2018-03-01

Aiming to pursue a micromirror possessing many desired characteristics, such as linear control, low power consumption, fast response, and easy fabrication, a new piezoelectric actuation strategy is presented. Different from conventional piezoelectric actuation cases, we first propose using AlN film as the active layer for actuating the micromirror. Owing to its good CMOS compatible deposition and patterning techniques, the AlN based piezoelectric micromirror has been successfully fabricated with a modified silicon-on-insulator-based microelectromechanical system (MEMS) process. At the same time, various mirror movement modes operating at high frequencies and excellent linear relationship between the movement and the control signal both have been experimentally demonstrated.

Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN

DOE PAGES

Li, Zhen; Yadav, Satyesh; Chen, Youxing; ...

2017-04-10

III–V and other binary octet semiconductors often take two phase forms—wurtzite (wz) and zinc blende (zb) crystal structures—with distinct functional performance at room temperature. Here, we investigate how to control the synthesized phase structure to either wz or zb phase by tuning the interfacial strain by taking AlN as a representative III–V compound. Furthermore, by applying in situ mechanical tests at atomic scale in a transmission electron microscope, we observed the reversible phase transformation from zb to wz, and characterized the transition path—the collective glide of Shockley partials on every two {111} planes of the zb AlN.

Method for improving the toughness of silicon carbide-based ceramics

DOEpatents

Tein, Tseng-Ying; Hilmas, Gregory E.

1996-01-01

Method of improving the toughness of SiC-based ceramics. SiC, , AlN, Al.sub.2 O.sub.3 and optionally .alpha.-Si.sub.3 N.sub.4 are hot pressed to form a material which includes AlN polytypoids within its structure.

AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Lee, Tae Ho; Kim, Tae Geun

2017-07-19

A hybrid-type transparent conductive electrode (H-TCE) structure comprising an AlN rod array with conducting filaments (CFs) and indium tin oxide (ITO) films is proposed to improve both current injection and distribution as well as optical transmittance in the UV region. These CFs, generated in UV-transparent AlN rod areas using an electric field, can be used as conducting paths for carrier injection from a metal to a semiconductor such as p-(Al)GaN, which allows perfect Ohmic behavior with high transmittance (>95% at 365 nm) to be obtained. In addition, conduction across AlN rods and Ohmic conduction mechanisms are investigated by analyzing AlN rods and AlN rod/p-AlGaN film interfaces. We apply these H-TCEs to three near-UV light-emitting diodes (LEDs) (385 nm LEDs with p-GaN and p-AlGaN terminated surfaces and 365 nm LED with p-AlGaN terminated surface). We confirm that the light power outputs increase by 66%, 79%, and 103%, whereas the forward voltages reduce by 5.6%, 10.2%, and 8.6% for 385 nm p-GaN terminated, 385 nm p-AlGaN terminated, and 365 nm p-AlGaN terminated LEDs with H-TCEs, respectively, compared to LEDs with reference ITOs.

Early and Late Retrieval of the ALN Removable Vena Cava Filter: Results from a Multicenter Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pellerin, O., E-mail: olivier.pellerin@egp.aphp.f; Barral, F. G.; Lions, C.

Retrieval of removable inferior vena cava (IVC) filters in selected patients is widely practiced. The purpose of this multicenter study was to evaluate the feasibility and results of percutaneous removal of the ALN removable filter in a large patient cohort. Between November 2003 and June 2006, 123 consecutive patients were referred for percutaneous extraction of the ALN filter at three centers. The ALN filter is a removable filter that can be implanted through a femoral/jugular vein approach and extracted by the jugular vein approach. Filter removal was attempted after an implantation period of 93 {+-} 15 days (range, 6-722 days)more » through the right internal jugular vein approach using the dedicated extraction kit after control inferior vena cavography. Following filter removal, vena cavograms were obtained in all patients. Successful extraction was achieved in all but one case. Among these successful retrievals, additional manipulation using a femoral approach was needed when the apex of the filter was close to the IVC wall in two patients. No immediate IVC complications were observed according to the postimplantation cavography. Neither technical nor clinical differences between early and late filter retrieval were noticed. Our data confirm the safety of ALN filter retrieval up to 722 days after implantation. In infrequent cases, additional endovenous filter manipulation is needed to facilitate extraction.« less

Al/Cu Dissimilar Friction Stir Welding with Ni, Ti, and Zn Foil as the Interlayer for Flow Control, Enhancing Mechanical and Metallurgical Properties

NASA Astrophysics Data System (ADS)

Sahu, Prakash Kumar; Pal, Sukhomay; Pal, Surjya K.

2017-07-01

This research investigates the effects of Ni, Ti, and Zn foil as interlayer, inserted between the faying edges of Al and Cu plates, for controlled intermetallic compound (IMC) formation. The weld tensile strength with Ti and Zn as interlayer is superior to Al base metal strength. This is due to controlled flow of IMCs by diffused Ti interlayer and thin, continuous, and uniform IMC formation in the case of Zn interlayer. Improved flexural stress was observed with interlayer. Weld microhardness varied with different interlayers and purely depends on IMCs present at the indentation point, flow of IMCs, and interlayer hardness. Specimens with interlayer failed at the interface of the nugget and thermomechanical-affected zone (TMAZ) with complete and broken three-dimensional (3-D) grains, indicating transgranular fracture. Phase analysis revealed that Al/Cu IMCs are impeded by Ni and Ti interlayer. The minor binary and ternary IMC phases form adjacent to the interlayer due to diffusion of the material with Al/Cu. Line scan and elemental mapping indicate thin, continuous, and uniform IMCs with enhanced weld metallurgical and mechanical properties for the joints with Zn interlayer. Macrostructural analysis revealed IMC flow variations with and without interlayer. Variation in grain size at different zones is also observed for different interlayers.

Effect of an RNA interference drug on the synthesis of proprotein convertase subtilisin/kexin type 9 (PCSK9) and the concentration of serum LDL cholesterol in healthy volunteers: a randomised, single-blind, placebo-controlled, phase 1 trial.

PubMed

Fitzgerald, Kevin; Frank-Kamenetsky, Maria; Shulga-Morskaya, Svetlana; Liebow, Abigail; Bettencourt, Brian R; Sutherland, Jessica E; Hutabarat, Renta M; Clausen, Valerie A; Karsten, Verena; Cehelsky, Jeffrey; Nochur, Saraswathy V; Kotelianski, Victor; Horton, Jay; Mant, Timothy; Chiesa, Joseph; Ritter, James; Munisamy, Malathy; Vaishnaw, Akshay K; Gollob, Jared A; Simon, Amy

2014-01-04

Proprotein convertase subtilisin/kexin type 9 (PCSK9) binds to LDL receptors, leading to their degradation. Genetics studies have shown that loss-of-function mutations in PCSK9 result in reduced plasma LDL cholesterol and decreased risk of coronary heart disease. We aimed to investigate the safety and efficacy of ALN-PCS, a small interfering RNA that inhibits PCSK9 synthesis, in healthy volunteers with raised cholesterol who were not on lipid-lowering treatment. We did a randomised, single-blind, placebo-controlled, phase 1 dose-escalation study in healthy adult volunteers with serum LDL cholesterol of 3·00 mmol/L or higher. Participants were randomly assigned in a 3:1 ratio by computer algorithm to receive one dose of intravenous ALN-PCS (with doses ranging from 0·015 to 0·400 mg/kg) or placebo. The primary endpoint was safety and tolerability of ALN-PCS. Secondary endpoints were the pharmacokinetic characteristics of ALN-PCS and its pharmacodynamic effects on PCSK9 and LDL cholesterol. Study participants were masked to treatment assignment. Analysis was per protocol and we used ANCOVA to analyse pharmacodynamic endpoint data. This trial is registered with ClinicalTrials.gov, number NCT01437059. Of 32 participants, 24 were randomly allocated to receive a single dose of ALN-PCS (0·015 mg/kg [n=3], 0·045 mg/kg [n=3], 0·090 mg/kg [n=3], 0·150 mg/kg [n=3], 0·250 mg/kg [n=6], or 0·400 mg/kg [n=6]) and eight to placebo. The proportions of patients affected by treatment-emergent adverse events were similar in the ALN-PCS and placebo groups (19 [79%] vs seven [88%]). ALN-PCS was rapidly distributed, with peak concentration and area under the curve (0 to last measurement) increasing in a roughly dose-proportional way across the dose range tested. In the group given 0·400 mg/kg of ALN-PCS, treatment resulted in a mean 70% reduction in circulating PCSK9 plasma protein (p<0·0001) and a mean 40% reduction in LDL cholesterol from baseline relative to placebo (p<0·0001). Our results suggest that inhibition of PCSK9 synthesis by RNA interference (RNAi) provides a potentially safe mechanism to reduce LDL cholesterol concentration in healthy individuals with raised cholesterol. These results support the further assessment of ALN-PCS in patients with hypercholesterolaemia, including those being treated with statins. This study is the first to show an RNAi drug being used to affect a clinically validated endpoint (ie, LDL cholesterol) in human beings. Alnylam Pharmaceuticals. Copyright © 2014 Elsevier Ltd. All rights reserved.

Method for improving the toughness of silicon carbide-based ceramics

DOEpatents

Tein, T.Y.; Hilmas, G.E.

1996-12-03

Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.

Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohan, Nagaboopathy; Raghavan, Srinivasan; Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012

2015-10-07

AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed atmore » an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.« less

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

NASA Astrophysics Data System (ADS)

Sun, Wei; Al Muyeed, Syed Ahmed; Song, Renbo; Wierer, Jonathan J.; Tansu, Nelson

2018-05-01

Significant enhancement in green emission by integrating a thin AlInN barrier layer, or interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs investigated here contains 5 periods of an InGaN QW, a 1 nm thick AlInN IL, and a 10 nm thick GaN barrier grown by metalorganic chemical vapor deposition. To accommodate the optimum low-pressure (20 Torr) growth of the AlInN layer a growth flow sequence with changing pressure is devised. The AlInN IL MQWs are compared to InGaN/AlGaN/GaN MQWs (AlGaN IL MQWs) and conventional InGaN/GaN MQWs. The AlInN IL MQWs provide benefits that are similar to AlGaN ILs, by aiding in the formation of abrupt heterointerfaces as indicated by X-ray diffraction omega-2theta (ω-2θ) scans, and also efficiency improvements due to high temperature annealing schedules during barrier growth. Room temperature photoluminescence of the MQW with AlInN ILs shows similar performance to MQWs with AlGaN ILs, and ˜4-7 times larger radiative efficiency (pump intensity dependent) at green wavelengths than conventional InGaN/GaN MQWs. This study shows the InGaN-based MQWs with AlInN ILs are capable of achieving superior performance to conventional InGaN MQWs emitting at green wavelengths.

White-light-emitting organic electroluminescent devices based on interlayer sequential energy transfer

NASA Astrophysics Data System (ADS)

Deshpande, R. S.; Bulović, V.; Forrest, S. R.

1999-08-01

We demonstrate efficient, molecular organic white-light-emitting devices using vacuum-deposited thin films of red luminescent [2-methyl-6-[2-(2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile (DCM2), doped into blue-emitting 4, 4' bis [N-1-napthyl-N-phenyl-amino]biphenyl (α-NPD), and green-emitting tris-(8-hydroxyquinolinato) aluminum(III) (AlQ3). The luminescent layers are separated by a hole-blocking layer of 2,9-dimethyl, 4,7-diphenyl, 1,10-phenanthroline (BCP), whose thickness is on the order of a typical Förster transfer radius of 30-40 Å. Excitons formed on α-NPD sequentially transfer their energy via a Förster mechanism to AlQ3 across the BCP layer, and from AlQ3 to DCM2. This interlayer sequential energy transfer results in partial excitation of all three molecular species, thereby producing white light emission. The thickness of the blocking layer and the concentration of DCM2 in α-NPD permit the tuning of the device spectrum to achieve a balanced white emission with Commission Internationale d'Eclairage chromaticity coordinates of (0.33, 0.33). The spectrum is largely insensitive to the drive current, and the devices have a maximum luminance of 13 500 cd/m2. At a luminance of 100 cd/m2, the quantum and power efficiencies are 0.5% and 0.35 lm/W, respectively.

Towards bio-silicon interfaces: Formation of an ultra-thin self-hydrated artificial membrane composed of dipalmitoylphosphatidylcholine (DPPC) and chitosan deposited in high vacuum from the gas-phase

NASA Astrophysics Data System (ADS)

Retamal, María J.; Cisternas, Marcelo A.; Gutierrez-Maldonado, Sebastian E.; Perez-Acle, Tomas; Seifert, Birger; Busch, Mark; Huber, Patrick; Volkmann, Ulrich G.

2014-09-01

The recent combination of nanoscale developments with biological molecules for biotechnological research has opened a wide field related to the area of biosensors. In the last years, device manufacturing for medical applications adapted the so-called bottom-up approach, from nanostructures to larger devices. Preparation and characterization of artificial biological membranes is a necessary step for the formation of nano-devices or sensors. In this paper, we describe the formation and characterization of a phospholipid bilayer (dipalmitoylphosphatidylcholine, DPPC) on a mattress of a polysaccharide (Chitosan) that keeps the membrane hydrated. The deposition of Chitosan (˜25 Å) and DPPC (˜60 Å) was performed from the gas phase in high vacuum onto a substrate of Si(100) covered with its native oxide layer. The layer thickness was controlled in situ using Very High Resolution Ellipsometry (VHRE). Raman spectroscopy studies show that neither Chitosan nor DPPC molecules decompose during evaporation. With VHRE and Atomic Force Microscopy we have been able to detect phase transitions in the membrane. The presence of the Chitosan interlayer as a water reservoir is essential for both DPPC bilayer formation and stability, favoring the appearance of phase transitions. Our experiments show that the proposed sample preparation from the gas phase is reproducible and provides a natural environment for the DPPC bilayer. In future work, different Chitosan thicknesses should be studied to achieve a complete and homogeneous interlayer.

Improvement of cancellous bone microstructure in patients on teriparatide following alendronate pretreatment.

PubMed

Fahrleitner-Pammer, Astrid; Burr, David; Dobnig, Harald; Stepan, Jan J; Petto, Helmut; Li, Jiliang; Krege, John H; Pavo, Imre

2016-08-01

An increase in procollagen type I amino-terminal propeptide (PINP) early after teriparatide initiation was shown to correlate with increased lumbar spine areal BMD and is a good predictor of the anabolic response to teriparatide. Few data exist correlating PINP and bone microstructure, and no data exist in patients on teriparatide following prior potent antiresorptive treatment. This exploratory analysis aimed to investigate the effects of teriparatide on cancellous bone microstructure and correlations of bone markers with microstructure in alendronate-pretreated patients. This was a post hoc analysis of changes in bone markers and three-dimensional indices of bone microstructure in paired iliac crest biopsies from a prospective teriparatide treatment study in postmenopausal women with osteoporosis who were either treatment-naïve (TN, n=16) or alendronate-pretreated (ALN, n=29) at teriparatide initiation. Teriparatide (20μg/day) was given for 24months; biopsies were taken at baseline and endpoint, and serum concentrations of PINP and type 1 collagen cross-linked C-telopeptide (βCTX) were measured at intervals up to 24months. In the TN and ALN groups, respectively, mean (SD) increases in three-dimensional bone volume/tissue volume were 105 (356)% (P=0.039) and 55 (139)% (P<0.005) and trabecular thickness 30.4 (30)% (P<0.001) and 30.8 (53)% (P<0.001). No significant changes were observed in trabecular number or separation. In the ALN patients, 3-month change of neither PINP nor βCTX correlated with indices of cancellous bone microstructure. However, 12-month changes in biochemical bone markers correlated significantly with improvements in bone volume/tissue volume, r=0.502 (P<0.01) and r=0.378 (P<0.05), trabecular number, r=0.559 (P<0.01) and r=0.515 (P<0.01), and reduction of trabecular separation, r=-0.432 (P<0.05) and r=-0.530 (P<0.01), for PINP and βCTX, respectively. We conclude that cancellous bone microstructure improved with teriparatide therapy irrespective of prior antiresorptive use. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

Structural properties and glass transition in Aln clusters

NASA Astrophysics Data System (ADS)

Sun, D. Y.; Gong, X. G.

1998-02-01

We have studied the structural and dynamical properties of several Aln clusters by the molecular-dynamics method combined with simulated annealing. The well-fitted glue potential is used to describe the interatomic interaction. The obtained atomic structures for n=13, 55, and 147 are in agreement with results from ab initio calculations. Our results have demonstrated that the disordered cluster Al43 can be considered as a glass cluster. The obtained thermal properties of glass cluster Al43 are clearly different from the results for high-symmetry clusters, its melting behavior has properties similar to those of a glass solid. The present studies also show that the surface melting behavior does not exist in the studied Aln clusters.

Theoretical investigation of Lamb wave characteristics in AlN/3C-SiC composite membranes

NASA Astrophysics Data System (ADS)

Lin, Chih-Ming; Chen, Yung-Yu; Pisano, Albert P.

2010-11-01

Cubic silicon carbide (3C-SiC) layer can provide advantages of high frequency and high quality factor for Lamb wave devices due to the superior properties of high acoustic velocity and low acoustic loss. In this study, Lamb wave propagation characteristics in composite membranes consisting of a c-axis oriented aluminum nitride (AlN) film and an epitaxial 3C-SiC (100) layer are investigated by theoretical calculation. The lowest symmetric mode Lamb wave propagating along the [011] direction exhibits a phase velocity higher than 10 000 m/s and an electromechanical coupling coefficient above 2% in the AlN/3C-SiC multilayered membranes.

Modeling of Lithium Niobate (LiNbO3) and Aluminum Nitride (AlN) Nanowires Using Comsol Multiphysics Software: The Case of Pressure Sensor

NASA Astrophysics Data System (ADS)

Ahmad, A. A.; Alsaad, A.; Al-Bataineh, Q. M.; Al-Naafa, M. A.

2018-02-01

In this study, Lithium niobate (LiNbO3) and Aluminum nitride (AlN) nanostructures were designed and investigated using the COMSOL Multiphysics software for pressure sensing applications. The Finite Element Method (FEM) was used for solving the differential equations with various parameters such as size, length, force, etc. The variation of the total maximum displacement as a function of applied force for various NWs lengths and the variation of the voltage as a function of applied force were plotted and discussed. AlN nanowires exhibit a better piezoelectric response than LiNbO3 nanowires do.

First principles study of neutral and anionic (medium-size) aluminum nitride clusters: AlnNn, n=7-16.

PubMed

Costales, Aurora; Blanco, M A; Francisco, E; Pendas, A Martín; Pandey, Ravindra

2006-03-09

We report the results of a theoretical study of AlnNn (n=7-16) clusters that is based on density functional theory. We will focus on the evolution of structural and electronic properties with the cluster size in the stoichiometric AlN clusters considered. The results reveal that the structural and electronic properties tend to evolve toward their respective bulk limits. The rate of evolution is, however, slow due to the hollow globular shape exhibited by the clusters, which introduces large surface effects that dominate the properties studied. We will also discuss the changes induced upon addition of an extra electron to the respective neutral clusters.

Bonding and Integration Technologies for Silicon Carbide Based Injector Components

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay

2008-01-01

Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding, titanium interlayers (PVD and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness (10, 20, and 50 microns), processing time and temperature, and cooling rates were investigated. Microprobe analysis was used to identify the phases in the bonded region. For bonds that were not fully reacted an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner titanium interlayers and/or longer processing times resulted in stable and compatible phases that did not contribute to microcracking and resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Non-destructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

Process optimization for diffusion bonding of tungsten with EUROFER97 using a vanadium interlayer

NASA Astrophysics Data System (ADS)

Basuki, Widodo Widjaja; Aktaa, Jarir

2015-04-01

Solid-state diffusion bonding is a selected joining technology to bond divertor components consisting of tungsten and EUROFER97 for application in fusion power plants. Due to the large mismatch in their coefficient of thermal expansions, which leads to serious thermally induced residual stresses after bonding, a thin vanadium plate is introduced as an interlayer. However, the diffusion of carbon originated from EUROFER97 in the vanadium interlayer during the bonding process can form a vanadium carbide layer, which has detrimental influences on the mechanical properties of the joint. For optimal bonding results, the thickness of this layer and the residual stresses has to be decreased sufficiently without a significant reduction of material transport especially at the vanadium/tungsten interface, which can be achieved by varying the diffusion bonding temperature and duration. The investigation results show that at a sufficiently low bonding temperature of 700 °C and a bonding duration of 4 h, the joint reaches a reasonable high ductility and toughness especially at elevated test temperature of 550 °C with elongation to fracture of 20% and mean absorbed Charpy impact energy of 2 J (using miniaturized Charpy impact specimens). The strength of the bonded materials is about 332 MPa at RT and 291 MPa at 550 °C. Furthermore, a low bonding temperature of 700 °C can also help to avoid the grain coarsening and the alteration of the grain structure especially of the EUROFER97 close to the bond interface.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gottwald, M.; Kan, J. J.; Lee, K.

Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ withmore » tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.« less

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness.

PubMed

Chen, Cheng; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhang, Wei; Liang, Renli; Dai, Jiangnan; Chen, Changqing

2016-12-01

We demonstrate the fabrication and characterization of localized surface plasmon (LSP)-enhanced n-ZnO quantum dot (QD)/MgO/p-GaN heterojunction light-emitting diodes (LEDs) by embedding Ag nanoparticles (Ag-NPs) into the ZnO/MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence (EL) is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence (PL) results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness

NASA Astrophysics Data System (ADS)

Chen, Cheng; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhang, Wei; Liang, Renli; Dai, Jiangnan; Chen, Changqing

2016-10-01

We demonstrate the fabrication and characterization of localized surface plasmon (LSP)-enhanced n-ZnO quantum dot (QD)/MgO/p-GaN heterojunction light-emitting diodes (LEDs) by embedding Ag nanoparticles (Ag-NPs) into the ZnO/MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence (EL) is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence (PL) results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics.

PubMed

Sun, Wei; Tan, Chee-Keong; Tansu, Nelson

2017-09-19

The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV) applications. Our numerical analysis indicates significant miniband engineering in the AlN/GaN DA by tuning the thicknesses of AlN barriers and GaN wells, so that the effective energy gap can be engineered from ~3.97 eV to ~5.24 eV. The band structure calculation also shows that the valence subbands of the AlN/GaN DA is properly rearranged leading to the heavy-hole (HH) miniband being the top valence subband, which results in the desired transverse-electric polarized emission. Furthermore, our study reveals that the electron-hole wavefunction overlaps in the AlN/GaN DA structure can be remarkably enhanced up to 97% showing the great potential of improving the internal quantum efficiency for mid- and deep-UV device application. In addition, the optical absorption properties of the AlN/GaN DA are analyzed with wide spectral coverage and spectral tunability in mid- and deep-UV regime. Our findings suggest the potential of implementing the AlN/GaN DA as a promising active region design for high efficiency mid- and deep-UV device applications.

Texturing effects in molybdenum and aluminum nitride films correlated to energetic bombardment during sputter deposition

NASA Astrophysics Data System (ADS)

Drüsedau, T. P.; Koppenhagen, K.; Bläsing, J.; John, T.-M.

Molybdenum films sputter-deposited at low pressure show a (110) to (211) texture turnover with increasing film thickness, which is accompanied by a transition from a fiber texture to a mosaic-like texture. The degree of (002) texturing of sputtered aluminum nitride (AlN) films strongly depends on nitrogen pressure in Ar/N2 or in a pure N2 atmosphere. For the understanding of these phenomena, the power density at the substrate during sputter deposition was measured by a calorimetric method and normalized to the flux of deposited atoms. For the deposition of Mo films and various other elemental films, the results of the calorimetric measurements are well described by a model. This model takes into account the contributions of plasma irradiation, the heat of condensation and the kinetic energy of sputtered atoms and reflected Ar neutrals. The latter two were calculated by TRIM.SP Monte Carlo simulations. An empirical rule is established showing that the total energy input during sputter deposition is proportional to the ratio of target atomic mass to sputtering yield. For the special case of a circular planar magnetron the radial dependence of the Mo and Ar fluxes and related momentum components at the substrate were calculated. It is concluded that mainly the lateral inhomogeneous radial momentum component of the Mo atoms is the cause of the in-plane texturing. For AlN films, maximum (002) texturing appears at about 250 eV per atom energy input.

Microwave annealing of Mg-implanted and in situ Be-doped GaN

NASA Astrophysics Data System (ADS)

Aluri, Geetha S.; Gowda, Madhu; Mahadik, Nadeemullah A.; Sundaresan, Siddarth G.; Rao, Mulpuri V.; Schreifels, John A.; Freitas, J. A.; Qadri, S. B.; Tian, Y.-L.

2010-10-01

An ultrafast microwave annealing method, different from conventional thermal annealing, is used to activate Mg-implants in GaN layer. The x-ray diffraction measurements indicated complete disappearance of the defect sublattice peak, introduced by the implantation process for single-energy Mg-implantation, when the annealing was performed at ≥1400 °C for 15 s. An increase in the intensity of Mg-acceptor related luminescence peak (at 3.26 eV) in the photoluminescence spectra confirms the Mg-acceptor activation in single-energy Mg-implanted GaN. In case of multiple-energy implantation, the implant generated defects persisted even after 1500 °C/15 s annealing, resulting in no net Mg-acceptor activation of the Mg-implant. The Mg-implant is relatively thermally stable and the sample surface roughness is 6 nm after 1500 °C/15 s annealing, using a 600 nm thick AlN cap. In situ Be-doped GaN films, after 1300 °C/5 s annealing have shown Be out-diffusion into the AlN layer and also in-diffusion toward the GaN/SiC interface. The in-diffusion and out-diffusion of the Be increased with increasing annealing temperature. In fact, after 1500 °C/5 s annealing, only a small fraction of in situ doped Be remained in the GaN layer, revealing the inadequateness of using Be-implantation for forming p-type doped layers in the GaN.

The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moerman, David; Colbert, Adam E.; Ginger, David S., E-mail: ginger@chem.washington.edu

We study the effects of modifying indium tin oxide electrodes with ultrathin titania (TiO{sub 2}) layers grown via plasma-enhanced atomic layer deposition (PE-ALD). We find an optimal thickness of PE-ALD-grown titania by tracking performance, which initially increases, peaks, and eventually decreases with increasing TiO{sub 2} thickness. We use scanning Kelvin probe microscopy (SKPM) to measure both the local work function and its distribution as a function of TiO{sub 2} thickness. We find that the variance in contact potential difference across the surface of the film is related to either the amorphous or anatase TiO{sub 2} form. Finally, we use localmore » SKPM recombination rate experiments, supported by bulk transient photovoltage and charge extraction measurements. We show that the optimum TiO{sub 2} thickness is the one for which the carrier lifetime is the longest and the charge carrier density is the highest, when the TiO{sub 2} is amorphous, in agreement with the device measurements.« less

Selective Epitaxial Graphene Growth on SiC via AlN Capping

NASA Astrophysics Data System (ADS)

Zaman, Farhana; Rubio-Roy, Miguel; Moseley, Michael; Lowder, Jonathan; Doolittle, William; Berger, Claire; Dong, Rui; Meindl, James; de Heer, Walt; Georgia Institute of Technology Team

2011-03-01

Electronic-quality graphene is epitaxially grown by graphitization of carbon-face silicon carbide (SiC) by the sublimation of silicon atoms from selected regions uncapped by aluminum nitride (AlN). AlN (deposited by molecular beam epitaxy) withstands high graphitization temperatures of 1420o C, hence acting as an effective capping layer preventing the growth of graphene under it. The AlN is patterned and etched to open up windows onto the SiC surface for subsequent graphitization. Such selective epitaxial growth leads to the formation of high-quality graphene in desired patterns without the need for etching and lithographic patterning of graphene itself. No detrimental contact of the graphene with external chemicals occurs throughout the fabrication-process. The impact of process-conditions on the mobility of graphene is investigated. Graphene hall-bars were fabricated and characterized by scanning Raman spectroscopy, ellipsometry, and transport measurements. This controlled growth of graphene in selected regions represents a viable approach to fabrication of high-mobility graphene as the channel material for fast-switching field-effect transistors.

Emerging methanol-tolerant AlN nanowire oxygen reduction electrocatalyst for alkaline direct methanol fuel cell.

PubMed

Lei, M; Wang, J; Li, J R; Wang, Y G; Tang, H L; Wang, W J

2014-08-11

Replacing precious and nondurable Pt catalysts with cheap materials is a key issue for commercialization of fuel cells. In the case of oxygen reduction reaction (ORR) catalysts for direct methanol fuel cell (DMFC), the methanol tolerance is also an important concern. Here, we develop AlN nanowires with diameters of about 100-150 nm and the length up to 1 mm through crystal growth method. We find it is electrochemically stable in methanol-contained alkaline electrolyte. This novel material exhibits pronounced electrocatalytic activity with exchange current density of about 6.52 × 10(-8) A/cm(2). The single cell assembled with AlN nanowire cathodic electrode achieves a power density of 18.9 mW cm(-2). After being maintained at 100 mA cm(-2) for 48 h, the AlN nanowire-based single cell keeps 92.1% of the initial performance, which is in comparison with 54.5% for that assembled with Pt/C cathode. This discovery reveals a new type of metal nitride ORR catalyst that can be cheaply produced from crystal growth method.

Structure and lattice dynamics of the wide band gap semiconductors MgSiN2 and MgGeN2

NASA Astrophysics Data System (ADS)

Râsander, M.; Quirk, J. B.; Wang, T.; Mathew, S.; Davies, R.; Palgrave, R. G.; Moram, M. A.

2017-08-01

We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN2 and MgGeN2 using density functional theory. In addition, we present the structural properties and Raman spectra of MgSiN2 powder. The structural properties and lattice dynamics of the orthorhombic systems are compared to those of wurtzite AlN. We find clear differences in the lattice dynamics between MgSiN2, MgGeN2 and AlN, for example, we find that the highest phonon frequency in MgSiN2 is about 100 cm-1 higher than the highest frequency in AlN, and that MgGeN2 is much softer. We also provide the Born effective charge tensors and dielectric tensors of MgSiN2, MgGeN2 and AlN. Phonon related thermodynamic properties, such as the heat capacity and the entropy, have also been evaluated and are found to be in very good agreement with available experimental results.

Tensile strength of aluminium nitride films

NASA Astrophysics Data System (ADS)

Zong, Deng Gang; Ong, Chung Wo; Aravind, Manju; Tsang, Mei Po; Loong Choy, Chung; Lu, Deren; Ma, Dejun

2004-11-01

Two-layered aluminium nitride (AlN)/silicon nitride microbridges were fabricated for microbridge tests to evaluate the elastic modulus, residual stress and tensile strength of the AlN films. The silicon nitride layer was added to increase the robustness of the structure. In a microbridge test, load was applied to the centre of a microbridge and was gradually increased by a nano-indenter equipped with a wedge tip until the sample was broken, while displacement was recorded coherently. Measurements were performed on single-layered silicon nitride microbridges and two-layered AlN/silicon nitride microbridges respectively. The data were fitted to a theory to derive the elastic modulus, residual stress and tensile strength of the silicon nitride films and AlN films. For the AlN films, the three parameters were determined to be 200, 0.06 and 0.3 GPa, respectively. The values of elastic modulus obtained were consistent with those measured by conventional nano-indentation method. The tensile strength value can be used as a reference to reflect the maximum tolerable tensile stress of AlN films when they are used in micro-electromechanical devices.

An Investigational RNAi Therapeutic Targeting Glycolate Oxidase Reduces Oxalate Production in Models of Primary Hyperoxaluria

PubMed Central

Li, Xingsheng; Racie, Timothy; Hettinger, Julia; Bettencourt, Brian R.; Najafian, Nader; Haslett, Patrick; Fitzgerald, Kevin; Holmes, Ross P.; Erbe, David; Querbes, William; Knight, John

2017-01-01

Primary hyperoxaluria type 1 (PH1), an inherited rare disease of glyoxylate metabolism, arises from mutations in the enzyme alanine-glyoxylate aminotransferase. The resulting deficiency in this enzyme leads to abnormally high oxalate production resulting in calcium oxalate crystal formation and deposition in the kidney and many other tissues, with systemic oxalosis and ESRD being a common outcome. Although a small subset of patients manages the disease with vitamin B6 treatments, the only effective treatment for most is a combined liver-kidney transplant, which requires life-long immune suppression and carries significant mortality risk. In this report, we discuss the development of ALN-GO1, an investigational RNA interference (RNAi) therapeutic targeting glycolate oxidase, to deplete the substrate for oxalate synthesis. Subcutaneous administration of ALN-GO1 resulted in potent, dose-dependent, and durable silencing of the mRNA encoding glycolate oxidase and increased serum glycolate concentrations in wild-type mice, rats, and nonhuman primates. ALN-GO1 also increased urinary glycolate concentrations in normal nonhuman primates and in a genetic mouse model of PH1. Notably, ALN-GO1 reduced urinary oxalate concentration up to 50% after a single dose in the genetic mouse model of PH1, and up to 98% after multiple doses in a rat model of hyperoxaluria. These data demonstrate the ability of ALN-GO1 to reduce oxalate production in preclinical models of PH1 across multiple species and provide a clear rationale for clinical trials with this compound. PMID:27432743

Quantifying Repetitive Speech in Autism Spectrum Disorders and Language Impairment

PubMed Central

van Santen, Jan P. H.; Sproat, Richard W.; Hill, Alison Presmanes

2013-01-01

We report on an automatic technique for quantifying two types of repetitive speech: repetitions of what the child says him/herself (self-repeats) and of what is uttered by an interlocutor (echolalia). We apply this technique to a sample of 111 children between the ages of four and eight: 42 typically developing children (TD), 19 children with specific language impairment (SLI), 25 children with autism spectrum disorders (ASD) plus language impairment (ALI), and 25 children with ASD with normal, non-impaired language (ALN). The results indicate robust differences in echolalia between the TD and ASD groups as a whole (ALN + ALI), and between TD and ALN children. There were no significant differences between ALI and SLI children for echolalia or self-repetitions. The results confirm previous findings that children with ASD repeat the language of others more than other populations of children. On the other hand, self-repetition does not appear to be significantly more frequent in ASD, nor does it matter whether the child’s echolalia occurred within one (immediate) or two turns (near-immediate) of the adult’s original utterance. Furthermore, non-significant differences between ALN and SLI, between TD and SLI, and between ALI and TD are suggestive that echolalia may not be specific to ALN or to ASD in general. One important innovation of this work is an objective fully automatic technique for assessing the amount of repetition in a transcript of a child’s utterances. PMID:23661504

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States.

PubMed

Kim, Gwang-Sik; Kim, Seung-Hwan; Park, June; Han, Kyu Hyun; Kim, Jiyoung; Yu, Hyun-Yong

2018-06-06

The difficulty in Schottky barrier height (SBH) control arising from Fermi-level pinning (FLP) at electrical contacts is a bottleneck in designing high-performance nanoscale electronics and optoelectronics based on molybdenum disulfide (MoS 2 ). For electrical contacts of multilayered MoS 2 , the Fermi level on the metal side is strongly pinned near the conduction-band edge of MoS 2 , which makes most MoS 2 -channel field-effect transistors (MoS 2 FETs) exhibit n-type transfer characteristics regardless of their source/drain (S/D) contact metals. In this work, SBH engineering is conducted to control the SBH of electrical top contacts of multilayered MoS 2 by introducing a metal-interlayer-semiconductor (MIS) structure which induces the Fermi-level unpinning by a reduction of metal-induced gap states (MIGS). An ultrathin titanium dioxide (TiO 2 ) interlayer is inserted between the metal contact and the multilayered MoS 2 to alleviate FLP and tune the SBH at the S/D contacts of multilayered MoS 2 FETs. A significant alleviation of FLP is demonstrated as MIS structures with 1 nm thick TiO 2 interlayers are introduced into the S/D contacts. Consequently, the pinning factor ( S) increases from 0.02 for metal-semiconductor (MS) contacts to 0.24 for MIS contacts, and the controllable SBH range is widened from 37 meV (50-87 meV) to 344 meV (107-451 meV). Furthermore, the Fermi-level unpinning effect is reinforced as the interlayer becomes thicker. This work widens the scope for modifying electrical characteristics of contacts by providing a platform to control the SBH through a simple process as well as understanding of the FLP at the electrical top contacts of multilayered MoS 2 .

Assessing the feasibility of the Effectiveness of Discontinuing Bisphosphonates trial: a pilot study.

PubMed

Wright, N C; Foster, P J; Mudano, A S; Melnick, J A; Lewiecki, M E; Shergy, W J; Curtis, J R; Cutter, G R; Danila, M I; Kilgore, M L; Lewis, E C; Morgan, S L; Redden, D T; Warriner, A H; Saag, K G

2017-08-01

The Effectiveness of Discontinuing Bisphosphonates (EDGE) study is a planned pragmatic clinical trial to guide "drug holiday" clinical decision making. This pilot study assessed work flow and feasibility of such a study. While participant recruitment and treatment adherence were suboptimal, administrative procedures were generally feasible and minimally disrupted clinic flow. The comparative effectiveness of continuing or discontinuing long-term alendronate (ALN) on fractures is unknown. A large pragmatic ALN discontinuation study has potential to answer this question. We conducted a 6-month pilot study of the planned the EDGE study among current long-term ALN users (women aged ≥65 with ≥3 years of ALN use) to determine study work flow and feasibility including evaluating the administrative aspects of trial conduct (e.g., time to contract, institutional review board (IRB) approval), assessing rates of site and participant recruitment, and evaluating post-randomization outcomes, including adherence, bisphosphonate-associated adverse events, and participant and site satisfaction. We assessed outcomes 1 and 6 months after randomization. Nine sites participated, including seven community-based medical practices and two academic medical centers. On average (SD), contract execution took 3.4 (2.3) months and IRB approval took 13.9 (4.1) days. Sites recruited 27 participants (13 to continue ALN and 14 to discontinue ALN). Over follow-up, 22% of participants did not adhere to their randomization assignment: 30.8% in the continuation arm and 14.3% in the discontinuation arm. No fractures or adverse events were reported. Sites reported no issues regarding work flow, and participants were highly satisfied with the study. Administrative procedures of the EDGE study were generally feasible, with minimal disruption to clinic flow. In this convenience sample, participant recruitment was suboptimal across most practice sites. Accounting for low treatment arm adherence, a comprehensive recruitment approach will be needed to effectively achieve the scientific goals of the EDGE study.

The resistance of cortical bone tissue to failure under cyclic loading is reduced with alendronate.

PubMed

Bajaj, Devendra; Geissler, Joseph R; Allen, Matthew R; Burr, David B; Fritton, J C

2014-07-01

Bisphosphonates are the most prescribed preventative treatment for osteoporosis. However, their long-term use has recently been associated with atypical fractures of cortical bone in patients who present with low-energy induced breaks of unclear pathophysiology. The effects of bisphosphonates on the mechanical properties of cortical bone have been exclusively studied under simple, monotonic, quasi-static loading. This study examined the cyclic fatigue properties of bisphosphonate-treated cortical bone at a level in which tissue damage initiates and is accumulated prior to frank fracture in low-energy situations. Physiologically relevant, dynamic, 4-point bending applied to beams (1.5 mm × 0.5 mm × 10 mm) machined from dog rib (n=12/group) demonstrated mechanical failure and micro-architectural features that were dependent on drug dose (3 groups: 0, 0.2, 1.0mg/kg/day; alendronate [ALN] for 3 years) with cortical bone tissue elastic modulus (initial cycles of loading) reduced by 21% (p<0.001) and fatigue life (number of cycles to failure) reduced in a stress-life approach by greater than 3-fold with ALN1.0 (p<0.05). While not affecting the number of osteons, ALN treatment reduced other features associated with bone remodeling, such as the size of osteons (-14%; ALN1.0: 10.5±1.8, VEH: 12.2±1.6, ×10(3) μm2; p<0.01) and the density of osteocyte lacunae (-20%; ALN1.0: 11.4±3.3, VEH: 14.3±3.6, ×10(2) #/mm2; p<0.05). Furthermore, the osteocyte lacunar density was directly proportional to initial elastic modulus when the groups were pooled (R=0.54, p<0.01). These findings suggest that the structural components normally contributing to healthy cortical bone tissue are altered by high-dose ALN treatment and contribute to reduced mechanical properties under cyclic loading conditions. Copyright © 2014 Elsevier Inc. All rights reserved.

Would Be Prophylactic Administrations of Low Concentration of Alendronate an Alternative for Improving the Craniofacial Bone Repair? A Preliminary Study Focused in the Period of Cellular Differentiation and Tissue Organization.

PubMed

Göhringer, Isabella; Muller, Carmem L Storrer; Cunha, Emanuelle Juliana; Passoni, Giuliene Nunes De Souza; Vieira, Juliana Souza; Zielak, João Cesar; Scariot, Rafaela; Deliberador, Tatiana Miranda; Giovanini, Allan Fernando

2017-10-01

Alendronate (ALN) is a nitrogen-bisphosphonate that may induce an anabolic effect on craniofacial bone repair when administrated in low doses. Based on this premise, this study analyzed the influence of prophylactic low doses of ALN on bone healing in defects created in rabbit mandible. A 5 × 2-mm diameter deep defect was created in the calvaria of 28 rabbits. Fourteen of these rabbits received previously 50 μg/kg of 1% sodium ALN for 4 weeks, while the other rabbits received only 0.9% physiological saline solution (control). Animals were euthanized at 15 and 60 days postsurgery (n = 7), and the data were analyzed using histomorphometry and immunohistochemistry using the anti-CD34, bone morphogenetic protein -2 (BMP-2), and transforming growth factor (TGF)-β1 antibodies. On the 15th day postsurgery, the specimens that received previous treatment with ALN demonstrated large vascular lumen and intense positivity to CD34 either concentrated in endothelium or cells spread among the reparative tissue. These results coincided with intense positivity for BMP-2+ cells and TGF-β1 that was concentrated in both cells and perivascular area. In contrast, the control group revealed scarce cells that exhibited CD34, BMP-2+, and the TGF-β1 was restricted for perivascular area on well-formed granulation tissue. These patterns of immunohistochemical result, especially found on the 15th day of analysis, seem to be responsible for the development of larger quantities of bone matrix in the specimens that receive ALN on the 60th day postsurgery. These preliminary results showed that the prophylactic administration of low doses of ALN might be an alternative to craniofacial bone craniofacial bone repair because it increases the immunopositivity for TGF-β1 and consequently improves the CD34+ and BMP-2+ cells on reparative sites.

In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaumeton, Florian, E-mail: florian.chaumeton@cemes.fr; Gauthier, Sébastien, E-mail: gauthier@cemes.fr; Martrou, David, E-mail: david.martrou@cemes.fr

Nitride wide-band-gap semiconductors are used to make high power electronic devices or efficient light sources. The performance of GaN-based devices is directly linked to the initial AlN buffer layer. During the last twenty years of research on nitride growth, only few information on the AlN surface quality have been obtained, mainly by ex-situ characterization techniques. Thanks to a Non Contact Atomic Force Microscope (NC-AFM) connected under ultra high vacuum (UHV) to a dedicated molecular beam epitaxy (MBE) chamber, the surface of AlN(0001) thin films grown on Si(111) and 4H-SiC(0001) substrates has been characterized. These experiments give access to a quantitativemore » determination of the density of screw and edge dislocations at the surface. The layers were also characterized by ex-situ SEM to observe the largest defects such as relaxation dislocations and hillocks. The influence of the growth parameters (substrate temperature, growth speed, III/V ratio) and of the initial substrate preparation on the dislocation density was also investigated. On Si(111), the large in-plane lattice mismatch with AlN(0001) (19%) induces a high dislocation density ranging from 6 to 12×10{sup 10}/cm{sup 2} depending on the growth conditions. On 4H-SiC(0001) (1% mismatch with AlN(0001)), the dislocation density decreases to less than 10{sup 10}/cm{sup 2}, but hillocks appear, depending on the initial SiC(0001) reconstruction. The use of a very low growth rate of 10 nm/h at the beginning of the growth process allows to decrease the dislocation density below 2 × 10{sup 9}/cm{sup 2}.« less

Evaluation of lymph node status after neoadjuvant chemotherapy in breast cancer patients: comparison of diagnostic performance of ultrasound, MRI and ¹⁸F-FDG PET/CT.

PubMed

You, S; Kang, D K; Jung, Y S; An, Y-S; Jeon, G S; Kim, T H

2015-08-01

To evaluate the diagnostic performance of ultrasound, MRI and fluorine-18 fludeoxyglucose positron emission tomography (¹⁸F-FDG PET)/CT for the diagnosis of metastatic axillary lymph node (ALN) after neoadjuvant chemotherapy (NAC) and to find out histopathological factors affecting the diagnostic performance of these imaging modalities. From January 2012 to November 2014, 191 consecutive patients with breast cancer who underwent NAC before surgery were retrospectively reviewed. We included 139 patients with ALN metastasis that was confirmed on fine needle aspiration or core needle biopsy at initial diagnosis. After NAC, 39 (28%) patients showed negative conversion of ALN on surgical specimens of sentinel lymph node (LN) or ALN. The sensitivity of ultrasound, MRI and PET/CT was 50% (48/96), 72% (70/97) and 22% (16/73), respectively. The specificity of ultrasound, MRI and PET/CT was 77% (30/39), 54% (21/39) and 85% (22/26), respectively. The Az value of combination of ultrasound and PET/CT was the highest (0.634) followed by ultrasound (0.626) and combination of ultrasound, MRI and PET/CT (0.617). The size of tumour deposit in LN and oestrogen receptor was significantly associated with the diagnostic performance of ultrasound (p < 0.001 and p = 0.009, respectively) and MRI (p = 0.045 and p = 0.036, respectively). The percentage diameter decrease, size of tumour deposit in LN, progesterone receptor, HER2 and histological grade were significantly associated with the diagnostic performance of PET/CT (p = 0.023, p = 0.002, p = 0.036, p = 0.044 and p = 0.008, respectively). On multivariate logistic regression analysis, size of tumour deposit within LN was identified as being independently associated with diagnostic performance of ultrasound [odds ratio, 13.07; 95% confidence interval (CI), 2.95-57.96] and PET/CT (odds ratio, 6.47; 95% CI, 1.407-29.737). Combination of three imaging modalities showed the highest sensitivity, and PET/CT showed the highest specificity for the evaluation of ALN metastasis after NAC. Ultrasound alone or combination of ultrasound and PET/CT showed the highest positive-predictive value. The size of tumour deposit within ALN was significantly associated with diagnostic performance of ultrasound and PET/CT. This study is about the diagnostic performance of ultrasound, MRI, PET/CT and combination of each imaging modality for the evaluation of metastatic ALN after NAC. Of many histopathological factors, only the size of tumour deposit within ALN was an independent factor associated with the diagnostic performance of ultrasound and PET/CT.

Conductive aluminum line formation on aluminum nitride surface by infrared nanosecond laser

NASA Astrophysics Data System (ADS)

Kozioł, Paweł E.; Antończak, Arkadiusz J.; Szymczyk, Patrycja; Stępak, Bogusz; Abramski, Krzysztof M.

2013-12-01

In this paper the fabrication of conductive aluminum paths on AlN ceramic's surface due to the interaction of laser radiation Nd:YAG (1.064 μm) is presented. The metallization process produces an appropriate power value on the ceramics surface to ensure the correct temperature (2200 °C) for which aluminum and nitrogen bonds are broken. Studies have been undertaken on creating low-ohmic structures depending on the parameters such as radiation power, scanning speed, the coverage of subsequent pulses and the environmental impact of the process (air, nitrogen, argon). Furthermore, with regards to the application of this method, it was significant to determine the thickness of the functional layer. A structure of the resistivity of ρ = 0.64 × 10-6 Ω m and aluminum layer thickness of 10 μm was achieved for the process carried out on the inert gas, argon. In addition, a quantitative analysis of nitrogen and aluminum for laser-treated structures was conducted. The performed tests confirmed that the highest amount of aluminum was produced on the surface treated by laser radiation in the environment of the process gas, argon.

Analysis of Multiple-Impact Ballistic Performance of a Tempered Glass Laminate with a Strike Face Film

DTIC Science & Technology

2014-02-01

a 0.18 in thick polymer interlayer between two layers of 0.5 in tempered silica based “ soda lime ” glass . A 0.08 in shatter resistant film was...AFCEC-CX-TY-TR-2014-0005 ANALYSIS OF MULTIPLE-IMPACT BALLISTIC PERFORMANCE OF A TEMPERED GLASS LAMINATE WITH A STRIKE FACE FILM Michael A. Magrini...Interim Technical Report 3 JAN 2012 to 2 JAN 2013 Analysis of Multiple-Impact Ballistic Performance of A Tempered Glass Laminate with a Strike Face Film

Langmuir-Blodgett films of random copolymers of fluoroalkyl(meth)acrylate and methacrylic acid: Fabrication and X-ray diffraction study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Safronov, V.; Feigin, L.A.; Budovskaya, L.D.

1994-12-31

Langmuir-Blodgett films of amphiphilic fluorinated copolymers were fabricated and studied by X-ray diffraction. Although these films show poor interlayer periodicity, they possess a uniform thickness even in the case of very thin films of one bilayer (22 {angstrom}). This feature was used to obtain complex LB structures (superlattices) with alteration of copolymer and fatty acid bilayers. X-ray diffraction data proved the regular periodical organization of these structures and allowed to calculate electron density distribution across the superlattices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zohar, S.; Choi, Y.; Love, D. M.

We use X-ray Excited Luminescence Microscopy to investigate the elemental and layer resolved magnetic reversal in an interlayer exchange coupled (IEC) epitaxial Fe/Cr wedge/Co heterostructure. The transition from strongly coupled parallel Co-Fe reversal for Cr thickness t(Cr) < 0.34 nm to weakly coupled layer independent reversal for t(Cr) > 1.5 nm is punctuated at 0.34 < t(Cr) < 1.5 nm by a combination of IEC guided domain wall motion and stationary zig zag domain walls. Domain walls nucleated at switching field minima are guided by IEC spatial gradients and collapse at switching field maxima.

Process to form mesostructured films

DOEpatents

Brinker, C. Jeffrey; Anderson, Mark T.; Ganguli, Rahul; Lu, Yunfeng

1999-01-01

This invention comprises a method to form a family of supported films film with pore size in the approximate range 0.8-20 nm exhibiting highly ordered microstructures and porosity derived from an ordered micellar or liquid-crystalline organic-inorganic precursor structure that forms during film deposition. Optically transparent, 100-500-nm thick films exhibiting a unique range of microstructures and uni-modal pore sizes are formed in seconds in a continuous coating operation. Applications of these films include sensors, membranes, low dielectric constant interlayers, anti-reflective coatings, and optical hosts.

Process to form mesostructured films

DOEpatents

Brinker, C.J.; Anderson, M.T.; Ganguli, R.; Lu, Y.F.

1999-01-12

This invention comprises a method to form a family of supported films with pore size in the approximate range 0.8-20 nm exhibiting highly ordered microstructures and porosity derived from an ordered micellar or liquid-crystalline organic-inorganic precursor structure that forms during film deposition. Optically transparent, 100-500-nm thick films exhibiting a unique range of microstructures and uni-modal pore sizes are formed in seconds in a continuous coating operation. Applications of these films include sensors, membranes, low dielectric constant interlayers, anti-reflective coatings, and optical hosts. 12 figs.

Defect engineering of the electronic transport through cuprous oxide interlayers

NASA Astrophysics Data System (ADS)

Fadlallah, Mohamed M.; Eckern, Ulrich; Schwingenschlögl, Udo

2016-06-01

The electronic transport through Au-(Cu2O)n-Au junctions is investigated using first-principles calculations and the nonequilibrium Green’s function method. The effect of varying the thickness (i.e., n) is studied as well as that of point defects and anion substitution. For all Cu2O thicknesses the conductance is more enhanced by bulk-like (in contrast to near-interface) defects, with the exception of O vacancies and Cl substitutional defects. A similar transmission behavior results from Cu deficiency and N substitution, as well as from Cl substitution and N interstitials for thick Cu2O junctions. In agreement with recent experimental observations, it is found that N and Cl doping enhances the conductance. A Frenkel defect, i.e., a superposition of an O interstitial and O substitutional defect, leads to a remarkably high conductance. From the analysis of the defect formation energies, Cu vacancies are found to be particularly stable, in agreement with earlier experimental and theoretical work.

An array of Eiffel-tower-shape AlN nanotips and its field emission properties

NASA Astrophysics Data System (ADS)

Tang, Yongbing; Cong, Hongtao; Chen, Zhigang; Cheng, Huiming

2005-06-01

An array of Eiffel-tower-shape AlN nanotips has been synthesized and assembled vertically with Si substrate by a chemical vapor deposition method at 700 °C. The single-crystalline AlN nanotips along [001] direction, including sharp tips with 10-100 nm in diameter and submicron-sized bases, are distributed uniformly with density of 106-107tips/cm2. Field emission (FE) measurements show that its turn on field is 4.7 V/μm, which is comparable to that of carbon nanotubes, and the fluctuation of FE current is as small as 0.74% for 4 h. It is revealed this nanostructure is available to optimize the FE properties and make the array a promising field emitter.

Calculated defect levels in GaN and AlN and their pressure coefficients

NASA Astrophysics Data System (ADS)

Gorczyca, I.; Svane, A.; Christensen, N. E.

1997-03-01

Using the Green's function technique based on the linear muffin-tin orbital method in the atomic-spheres approximation we perform self-consistent calculations of the electronic structure of native defects and other impurities in cubic GaN and AlN. Vacancies, antisites and interstitials and some of the most common dopants such as Zn, Mg, Cd, C and Ge are investigated in different charge states. To examine the lattice relaxation effects the super-cell approach in connection with the full-potential linear muffin-tin-orbital method is applied to the aluminum vacancy and the nitrogen antisite in AlN. The influence of hydrostatic pressure on the energy positions of some defect states is also studied.

Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

PubMed

Laksana, Chipta; Chen, Meei-Ru; Liang, Yen; Tzou, An-Jyeg; Kao, Hui-Ling; Jeng, Erik; Chen, Jyh; Chen, Hou-Guang; Jian, Sheng-Rui

2011-08-01

High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.

Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

NASA Astrophysics Data System (ADS)

Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

2018-03-01

In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

Slurry spin coating of thin film yttria stabilized zirconia/gadolinia doped ceria bi-layer electrolytes for solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Kim, Hyun Joong; Kim, Manjin; Neoh, Ke Chean; Han, Gwon Deok; Bae, Kiho; Shin, Jong Mok; Kim, Gyu-Tae; Shim, Joon Hyung

2016-09-01

Thin ceramic bi-layered membrane comprising yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is fabricated by the cost-effective slurry spin coating technique, and it is evaluated as an electrolyte of solid oxide fuel cells (SOFCs). It is demonstrated that the slurry spin coating method is capable of fabricating porous ceramic films by adjusting the content of ethyl-cellulose binders in the source slurry. The porous GDC layer deposited by spin coating under an optimal condition functions satisfactorily as a cathode-electrolyte interlayer in the test SOFC stack. A 2-μm-thick electrolyte membrane of the spin-coated YSZ/GDC bi-layer is successfully deposited as a dense and stable film directly on a porous NiO-YSZ anode support without any interlayers, and the SOFC produces power output over 200 mW cm-2 at 600 °C, with an open circuit voltage close to 1 V. Electrochemical impedance spectra analysis is conducted to evaluate the performance of the fuel cell components in relation with the microstructure of the spin-coated layers.