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Sample records for aluminum oxide film

  1. Aluminum oxide film thickness and emittance

    SciTech Connect

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55{degrees}C) moderator for about a year. The average moderator temperature was assumed to be 30{degrees}C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 {mu}m {plus minus} 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 {mu}m {plus minus} 11%. Total hemispherical emittance is predicted to be 0.69 at 96{degrees}C, decreasing to 0.45 at 600{degrees}C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values.

  2. Aluminum oxide film thickness and emittance

    SciTech Connect

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55{degrees}C) moderator for about a year. The average moderator temperature was assumed to be 30{degrees}C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 {mu}m {plus_minus} 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 {mu}m {plus_minus} 11%. Total hemispherical emittance is predicted to be 0.69 at 96{degrees}C, decreasing to 0.45 at 600{degrees}C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values.

  3. Mechanism for Limiting Thickness of Thin Oxide Films on Aluminum

    NASA Astrophysics Data System (ADS)

    Baran, Jakub D.; Grönbeck, Henrik; Hellman, Anders

    2014-04-01

    A first-principles account of the observed limiting thickness of oxide films formed on aluminum during oxidizing conditions is presented. The results uncover enhanced bonding of oxygen to thin alumina films in contact with metallic aluminum that stems from charge transfer between a reconstructed oxide-metal interface and the adsorbed molecules. The first-principles results are compared with the traditional Cabrera-Mott (CM) model, which is a classical continuum model. Within the CM model, charged surface oxygen species and metal ions generate a (Mott) potential that drives oxidation. An apparent limiting thickness is observed as the oxidation rate decreases rapidly with film growth. The present results support experimental estimates of the Mott potential and film thicknesses. In contrast to the CM model, however, the calculations reveal a real limiting thickness that originates from a diminishing oxygen adsorption energy beyond a certain oxide film thickness.

  4. Electrochemical formation of a composite polymer-aluminum oxide film

    NASA Astrophysics Data System (ADS)

    Runge-Marchese, Jude Mary

    1997-10-01

    The formation of polymer films through electrochemical techniques utilizing electrolytes which include conductive polymer is of great interest to the coatings and electronics industries as a means for creating electrically conductive and corrosion resistant finishes. One of these polymers, polyamino-benzene (polyaniline), has been studied for this purpose for over ten years. This material undergoes an insulator-to-metal transition upon doping with protonic acids in an acid/base type reaction. Review of prior studies dealing with polyaniline and working knowledge of aluminum anodization has led to the development of a unique process whereby composite polymer-aluminum oxide films are formed. The basis for the process is a modification of the anodizing electrolyte which results in the codeposition of polyaniline during aluminum anodization. A second process, which incorporates electrochemical sealing of the anodic layer with polyaniline was also developed. The formation of these composite films is documented through experimental processing, and characterized by way of scientific analysis and engineering tests. Analysis results revealed the formation of unique dual phase anodic films with fine microstructures which exhibited full intrusion of the columnar aluminum oxide structure with polyaniline, indicating the polymer was deposited as the metal oxidation proceeded. An aromatic amine derivative of polyaniline with aluminum sulfate was determined to be the reaction product within the aluminum oxide phase of the codeposited films. Scientific characterization determined the codeposition process yields completely chemically and metallurgically bound composite films. Engineering studies determined the films, obtained through a single step, exhibited superior wear and corrosion resistance to conventionally anodized and sealed films processed through two steps, demonstrating the increased manufacturing process efficiency that can be realized with the modification of the

  5. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes.

    PubMed

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-01-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials. PMID:26831759

  6. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    PubMed Central

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-01-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials. PMID:26831759

  7. Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

    PubMed

    Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

    2016-05-01

    Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures.

  8. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    NASA Astrophysics Data System (ADS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  9. Surface enhanced Raman scattering of biospecies on anodized aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Zhang, C.; Smirnov, A. I.; Hahn, D.; Grebel, H.

    2007-06-01

    Traditionally, aluminum and anodized aluminum oxide films (AAO) are not the platforms of choice for surface-enhanced raman scattering (SERS) experiments despite of the aluminum's large negative permittivity value. Here we examine the usefulness of aluminum and nanoporous alumina platforms for detecting soft biospecies ranging from bacterial spores to protein markers. We used these flat platforms to examine SERS of a model protein (cytochrome c from bovine heart tissue) and bacterial cells (spores of Bacillus subtilis ATCC13933 used as Anthrax simulant) and demonstrated clear Raman amplification.

  10. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  11. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance gm change, threshold voltage VT change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  12. Synthesis of iridescent Ni-containing anodic aluminum oxide films by anodization in oxalic acid

    NASA Astrophysics Data System (ADS)

    Xu, Qin; Ma, Hong-Mei; Zhang, Yan-Jun; Li, Ru-Song; Sun, Hui-Yuan

    2016-02-01

    Ni-containing anodic aluminum oxide films with highly saturated colors were synthesized using an ac electrodeposition method, and the optical and magnetic characteristics of the films were characterized. Precisely controllable color tuning could be obtained using wet-chemical etching to thin and widen the anodic aluminum oxide films pores isotropically before Ni deposition. Magnetic measurements indicate that such colored composite films not exhibit obvious easy magnetization direction. The resulted short (200 nm in length) and wide (50 nm in diameter) Ni nanowires present only fcc phase. The magnetization reversal mechanism is in good agreement with the symmetric fanning reversal mode which is discussed in detail. Such films may find applications in decoration, display and multifunctional anti-counterfeiting applications.

  13. Modelling the growth process of porous aluminum oxide film during anodization

    NASA Astrophysics Data System (ADS)

    Aryslanova, E. M.; Alfimov, A. V.; Chivilikhin, S. A.

    2015-11-01

    Currently it has become important for the development of metamaterials and nanotechnology to obtain regular self-assembled structures. One such structure is porous anodic alumina film that consists of hexagonally packed cylindrical pores. In this work we consider the anodization process, our model takes into account the influence of layers of aluminum and electrolyte on the rate of growth of aluminum oxide, as well as the effect of surface diffusion. In present work we consider those effects. And as a result of our model we obtain the minimum distance between centers of alumina pores in the beginning of anodizing process.

  14. Bimodal spatial distribution of pores in anodically oxidized aluminum thin films

    NASA Astrophysics Data System (ADS)

    Behnke, J. F.; Sands, T.

    2000-12-01

    Though porous anodic aluminum oxide has been the subject of considerable research since the 1950s, little attention has been devoted to the characterization of the self-organization of the pore structures, and fewer of these studies have focused on anodization of thin films. The degree to which these structures self-organize, however, could play a vital role in future applications of porous anodic aluminum oxide. In this study a model is developed to describe pore ordering in thin anodized aluminum films. The model is based on a radial distribution function approach to describe the interpore spacings. Idealized one-dimensional and two-dimensional (2D) radial distribution functions are combined by linear superposition to approximate experimental radial distribution functions. Using these radial distribution functions, an order parameter is developed and an improved definition of pore spacing is constructed. This method confirms that the oxide initially forms with a highly frustrated porous structure and reorganizes toward greater 2D order as the oxide grows into the film.

  15. Welding Phenomenon and Removal Mechanism of Aluminum-Oxide Films by Space GHTA Welding Process in Vacuum

    NASA Astrophysics Data System (ADS)

    Suita, Yoshikazu; Ekuni, Tomohide; Kamei, Misa; Tsukuda, Yoshiyuki; Terajima, Noboru; Yamashita, Masahiro; Imagawa, Kichiro; Masubuchi, Koichi

    Aluminum alloys have been widely used in constructing various space structures including the ISS (International Space Station) and launch vehicles. In order to apply the welding technology in space, welding experiments on aluminum alloy were performed using by the GHTA (Gas Hollow Tungsten Arc) welding processes using an inverter controlled DC/AC GTA welding machine in vacuum. We observed the removal mechanism of aluminum-oxide films on molten metal in detail during the welding using a high-speed video camera. As a result, it is clarified that the impact arc pressure produced by pulsed current mechanically crushes and removes aluminum-oxide films on the molten pool. This removal mechanism of aluminum-oxide films is completely different from a removal mechanism by cleaning action.

  16. Studies of aluminum oxide thin films deposited by laser ablation technique

    NASA Astrophysics Data System (ADS)

    Płóciennik, P.; Guichaoua, D.; Korcala, A.; Zawadzka, A.

    2016-06-01

    This paper presents the structural and optical investigations of the aluminum oxide nanocrystalline thin films. Investigated films were fabricated by laser ablation technique in high vacuum onto quartz substrates. The films were deposited at two different temperatures of the substrates equal to room temperature and 900 K. X-ray Diffraction spectra proved nanocrystalline character and the corundum phase of the film regardless on the substrate temperature during the deposition process. Values of the refractive indices, extinction and absorption coefficients were calculated by using Transmission and Reflection Spectroscopy in the UV-VIS-NIR range of the wavelength. Coupling Prism Method was used for films thickness estimations. Experimental measurements and theoretical calculations of the Third Harmonic Generation were also reported. Obtained results show that the lattice strain may affect obtained values of the third order nonlinear optical susceptibility.

  17. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  18. Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films

    SciTech Connect

    Rhodes,C.; Lappi, S.; Fischer, D.; Sambasivan, S.; Genzer, J.; Franzen, S.

    2008-01-01

    The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.

  19. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride.

    PubMed

    Kischkat, Jan; Peters, Sven; Gruska, Bernd; Semtsiv, Mykhaylo; Chashnikova, Mikaela; Klinkmüller, Matthias; Fedosenko, Oliana; Machulik, Stephan; Aleksandrova, Anna; Monastyrskyi, Gregorii; Flores, Yuri; Masselink, W Ted

    2012-10-01

    The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm (700-6500 cm(-1)). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

  20. Advantages of Oxide Films as Bases for Aluminum Pigmented Surface Coatings for Aluminum Alloys

    NASA Technical Reports Server (NTRS)

    Buzzard, R W; Mutchler, W H

    1931-01-01

    Both laboratory and weather-exposure corrosion tests showed conclusively that the protection afforded by aluminum pigmented spar varnish coatings applied to previously anodized aluminum surfaces was greatly superior to that afforded by the same coatings applied to surfaces which had simply been cleaned free from grease and not anodized.

  1. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  2. Reactively Deposited Aluminum Oxide and Fluoropolymer Filled Aluminum Oxide Protective Coatings for Polymers

    NASA Technical Reports Server (NTRS)

    Rutledge, Sharon K.; Banks, Bruce A.; Hunt, Jason

    1995-01-01

    Reactive ion beam sputter deposition of aluminum simultaneous with low energy arrival of oxygen ions at the deposition surface enables the formation of highly transparent aluminum oxide films. Thick (12 200 A), adherent, low stress, reactively deposited aluminum oxide films were found to provide some abrasion resistance to polycarbonate substrates. The reactively deposited aluminum oxide films are also slightly more hydrophobic and more transmitting in the UV than aluminum oxide deposited from an aluminum oxide target. Simultaneous reactive sputter deposition of aluminum along with polytetrafluoroethylene (PTFE Teflon) produces fluoropolymer-filled aluminum oxide films which are lower in stress, about the same in transmittance, but more wetting than reactively deposited aluminum oxide films. Deposition properties, processes and potential applications for these coatings will be discussed.

  3. Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

    NASA Astrophysics Data System (ADS)

    Miki, Shohei; Iguchi, Koji; Kitano, Sho; Hayakashi, Koki; Hotta, Yasushi; Yoshida, Haruhiko; Ogura, Atsushi; Satoh, Shin-ichi; Arafune, Koji

    2015-08-01

    Aluminum oxide (AlOx) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (Tdep) and AlOx film thickness on the maximum surface recombination velocities (Smax) were evaluated. It was found that Smax was improved with increasing Tdep. The AlOx film deposited at 400 °C exhibited the best Smax value of 2.8 cm/s, and the passivation quality was comparable to that of AlOx deposited by other vacuum-based techniques. Smax was also improved with increasing film thickness. When the film thickness was above 10 nm, Smax was approximately 10 cm/s. From the Fourier transform infrared spectra, it was found that the AlOx films deposited by MCVD consisted of an AlOx layer and a Si-diffused AlOx layer. In addition, it is important for the layers to be thick enough to obtain high-quality passivation.

  4. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Morales-Masis, M.; Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2)-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  5. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect

    Morales-Masis, M. Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  6. Anodic Oxide Films on Aluminum: Their Significance for Corrosion Protection and Micro- and Nano-Technologies

    NASA Astrophysics Data System (ADS)

    Takahashi, Hideaki; Sakairi, Masatoshi; Kikuchi, Tatsuya

    It was only 120 years ago that humans became able to obtain aluminum metal industrially by applying electricity to reduce bauxite ore. Hence, aluminum is much newer than other metals such as copper, iron, and gold, which have been used since pre-historical times. This is surprising since aluminum comprises 7.56 % of all elements near the surface of the earth, and is found in abundant amounts, next to only oxygen and silicon. The reason why aluminum metal only became available fairly recently is that aluminum has a strong chemical affinity to oxygen, and this prevents reduction of aluminum oxide by chemical reaction with carbon at high temperatures, unlike iron- and copper-oxides. Reduction of aluminum oxide was first realized by H. Davy in 1807, using Voltaic piles, which had been invented in 1800 by the Italian scientist, A. Volta.

  7. Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequence

    SciTech Connect

    Miikkulainen, Ville Nilsen, Ola; Fjellvåg, Helmer; Li, Han; King, Sean W.; Laitinen, Mikko; Sajavaara, Timo

    2015-01-01

    Atomic layer deposition (ALD) holds markedly high potential of becoming the enabling method for achieving the three-dimensional all-solid-state thin-film lithium ion battery (LiB). One of the most crucial components in such a battery is the electrolyte that needs to hold both low electronic conductivity and at least fair lithium ion conductivity being at the same time pinhole free. To obtain these desired properties in an electrolyte film, one necessarily has to have a good control over the elemental composition of the deposited material. The present study reports on the properties of ALD lithium aluminum oxide (Li{sub x}Al{sub y}O{sub z}) thin films. In addition to LiB electrolyte applications, Li{sub x}Al{sub y}O{sub z} is also a candidate low dielectric constant (low-k) etch stop and diffusion barrier material in nanoelectronics applications. The Li{sub x}Al{sub y}O{sub z} films were deposited employing trimethylaluminum-O{sub 3} and lithium tert-butoxide-H{sub 2}O for Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, respectively. The composition was aimed to be controlled by varying the pulsing ratio of those two binary oxide ALD cycles. The films were characterized by several methods for composition, crystallinity and phase, electrical properties, hardness, porosity, and chemical environment. Regardless of the applied pulsing ratio of Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, all the studied ALD Li{sub x}Al{sub y}O{sub z} films of 200 and 400 nm in thickness were polycrystalline in the orthorhombic β-LiAlO{sub 2} phase and also very similar to each other with respect to composition and other studied properties. The results are discussed in the context of both fundamental ALD chemistry and applicability of the films as thin-film LiB electrolytes and low-k etch stop and diffusion barriers.

  8. Microstructural Effects on the Reactivity of Nano-Aluminum/Iodine (V) Oxide Films

    NASA Astrophysics Data System (ADS)

    Little, B.; Welle, E.; Martinez, L.; Nittinger, J.; Bogle, M.; Emery, S.; Lindsay, C.; Schrand, A.

    2013-06-01

    Recent efforts investigating the self-ignition mechanism of nanoaluminum blended with iodine (V) oxide in the form of powders with and without additives suggests that ignition begins below the decomposition point of either reactant and takes place at the alumina shell surrounding the aluminum nanoparticle. As observed in previous studies of powder composites, microstructural features such as particle morphology are expected to strongly influence properties that govern the combustion behavior of this energetic material (EM). In this study, highly reactive composites containing amorphous and/or crystalline iodine oxide and micron/nano-sized Al was blended with an additive and deposited as films. Physiochemical techniques such as thermal gravimetric analysis, scanning calorimetry, X-ray diffraction, electron microscopy, high-speed imaging and planar doppler velocimetry were employed to characterize these EMs with emphasis on correlating the reaction rate (burn rate) with inherent microstructural features (porosity, thickness, TMD, etc). This work was a continuation of efforts to probe the self-ignition mechanism of Al-iodine (V) oxide composites.

  9. Microstructural Effects on the Reactivity of Nano-Aluminum/Iodine (V) Oxide Films

    NASA Astrophysics Data System (ADS)

    Little, Brian; Langhals, Jarred; Emery, Sam; Martinez, Lucas; Welle, Eric; Lindsay, Michael

    2015-06-01

    Recent efforts investigating the self-ignition mechanism of nanoaluminum blended with iodine (V) oxide in the form of powders with and without additives suggests that ignition begins below the decomposition point of either reactant and takes place at the alumina shell surrounding the aluminum nanoparticle. As observed in previous studies of powder composites, microstructural features such as particle morphology are expected to strongly influence properties that govern the combustion behavior of this energetic material (EM). In this study, highly reactive composites containing amorphous and/or crystalline iodine oxide and nano-sized Al was blended with an additive and deposited as films. Physiochemical techniques such as thermal gravimetric analysis, scanning calorimetry, X-ray diffraction, electron microscopy, high-speed imaging, time of arrival data via photodiodes and planar doppler velocimetry were employed to characterize these EMs with emphasis on correlating the reaction rate (burn rate) with inherent microstructural features (porosity, thickness, TMD, etc). This work was a continuation of efforts to probe the self-ignition mechanism of Al-iodine (V) oxide composites.

  10. Plasmon-induced optical switching of electrical conductivity in porous anodic aluminum oxide films encapsulated with silver nanoparticle arrays.

    PubMed

    Huang, Chen-Han; Lin, Hsing-Ying; Lau, Ben-Chao; Liu, Chih-Yi; Chui, Hsiang-Chen; Tzeng, Yonhua

    2010-12-20

    We report on plasmon induced optical switching of electrical conductivity in two-dimensional (2D) arrays of silver (Ag) nanoparticles encapsulated inside nanochannels of porous anodic aluminum oxide (AAO) films. The reversible switching of photoconductivity greatly enhanced by an array of closely spaced Ag nanoparticles which are isolated from each other and from the ambient by thin aluminum oxide barrier layers are attributed to the improved electron transport due to the localized surface plasmon resonance and coupling among Ag nanoparticles. The photoconductivity is proportional to the power, and strongly dependent on the wavelength of light illumination. With Ag nanoparticles being isolated from the ambient environments by a thin layer of aluminum oxide barrier layer of controlled thickness in nanometers to tens of nanometers, deterioration of silver nanoparticles caused by environments is minimized. The electrochemically fabricated nanostructured Ag/AAO is inexpensive and promising for applications to integrated plasmonic circuits and sensors. PMID:21197062

  11. A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESD

    NASA Technical Reports Server (NTRS)

    Bujor, M.; Larson, L. A.; Poppa, H.

    1982-01-01

    The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.

  12. Tuning the composition and nanostructure of Pt/Ir films via anodized aluminum oxide templated atomic layer deposition.

    SciTech Connect

    Comstock, D. J.; Christensen, S. T.; Elam, J. W.; Pellin, M. J.; Hersam, M. C.; Northwestern Univ.

    2010-09-23

    Nanostructured metal films have been widely studied for their roles in sensing, catalysis, and energy storage. In this work, the synthesis of compositionally controlled and nanostructured Pt/Ir films by atomic layer deposition (ALD) into porous anodized aluminum oxide templates is demonstrated. Templated ALD provides advantages over alternative synthesis techniques, including improved film uniformity and conformality as well as atomic-scale control over morphology and composition. Nanostructured Pt ALD films are demonstrated with morphological control provided by the Pt precursor exposure time and the number of ALD cycles. With these approaches, Pt films with enhanced surface areas, as characterized by roughness factors as large as 310, are reproducibly synthesized. Additionally, nanostructured Ptlr alloy films of controlled composition and morphology are demonstrated by templated ALD, with compositions varying systematically from pure Pt to pure Ir. Lastly, the application of nanostructured Pt films to electrochemical sensing applications is demonstrated by the non-enzymatic sensing of glucose.

  13. Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2015-09-01

    Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.

  14. Effect of Aluminum concentration on structural and optical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films for transparent electrode applications

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Subba Rao, T.

    2012-11-01

    Zinc Aluminum Oxide(ZAO) thin films were deposited on glass substrates by DC reactive magnetron sputtering in an Ar+O2 gas mixture using commercial available Zn metal (99.99% purity) and Al (99.99% purity) targets of 2 inch diameter and 4 mm thickness. The films were characterized and the effect of aluminum (Al) concentration (2 at %-6 at %) on the structural and optical properties was studied. The average crystallite size obtained from Scherer formula is in the range of 32-44nm. Microstructural analysis using Scanning Electron Microscope (SEM) supplemented with EDS is carried out to find the grain size as well as to find the composition elemental data of prepared thin films. Optical study is performed to calculate the extinction coefficient (k), absorption coefficient (a), optical band gap (Eg) using transmission spectra obtained using UV-VIS-NIR spectrophotometer. There was widening of optical band gap with increasing aluminum concentration. ZAO film with low resistivity 3.2 × 10-4 cm and high transmittance of 80% is obtained for 3at% doped Al which is crucial for optoelectronic applications.

  15. Characterization of molybdenum doped indium oxide/aluminum doped zinc oxide thin film stacks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Elamurugu, Elangovan; Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

    2014-03-01

    Multilayer (ML) thin films, based on indium molybdenum oxide (IMO) and aluminum zinc oxide (AZO), having different stacking were deposited using RF sputtering at room temperature (RT). The total-layer thickness of the MLs ranges between 93 nm and 98 nm. The deposited films were characterized by their structural, electrical, microstructural, and optical properties. X-ray diffraction (XRD) peaks obtained at 2θ of around 30.6° and 34.27° are matched with cubic-In2O3 (222) and hexagonal-ZnO (002), respectively. The MLs have both nano-crystalline and polycrystalline structures depending on the layer properties. A conspicuous feature of XRD analysis is the absence of diffraction peak from 50 nm thick IMO layer when it is stacked below 50 nm thick AZO, whereas it appears significantly when the stacking is reversed to place IMO above AZO layer. Hall measurements confirmed that the deposited MLs are n- type conducting and the electrical properties are varied as a function of layer properties. The deposited MLs show high shortwavelength infrared transmittance (SWIRT) even at 3300 nm, which is ranging as high as 75 % - 90 %. Overall, the MLs show high transmittance in the entire Vis-SWIR region. The optical band gap (Eg) calculated using the absorption coefficient (α) and photon energy (hν) of the deposited MLs is ranging between 3.19 eV and 3.56 eV, depending on the layer properties. Selected as- deposited films were annealed in open air at 400 °C for 1 h; the transmittance of annealed films was improved but their electrical properties deteriorated. Atomic force microscopy (AFM) analysis shows that the root-mean-square (RMS) roughness of the MLs ranges between 0.8 nm and 1.5 nm.

  16. Influence of the surface pre-treatment of aluminum on the processes of formation of cerium oxides protective films

    NASA Astrophysics Data System (ADS)

    Andreeva, R.; Stoyanova, E.; Tsanev, A.; Stoychev, D.

    2016-03-01

    It is known that there is special interest in the contemporary investigations on conversion treatment of aluminum aimed at promoting its corrosion stability, which is focused on electrolytes on the basis of salts of metals belonging to the group of rare-earth elements. Their application is especially attractive, as it enables a successful substitution of the presently applied highly efficient, but at the same time toxic Cr6+-containing electrolytes. The present paper presents a study on the influence of the preliminary alkaline activation and acidic de-oxidation of the aluminum surface on the processes of immersion formation of protective cerium oxides films on Al 1050. The results obtained show that their deposition from simple electrolytes (containing only salts of Ce3+ ions) on the Al surface, treated only in alkaline solution, occurs at a higher rate, which leads to preparing thicker oxide films having a better protective ability. In the cases when the formation of oxide films is realized in a complex electrolyte (containing salts of Ce3+ and Cu2+ ions), better results are obtained with respect to the morphology and protective action of cerium oxides film on samples that have been consecutively activated in alkaline solution and deoxidized in acidic solution. Electrochemical investigations were carried out in a model corrosion medium (0.1 M NaCl); it was shown that the cerium protective films, deposited by immersion, have a cathodic character with regard to the aluminum support and inhibit the occurrence of the depolarizing corrosion process -- the reaction of oxygen reduction.

  17. Interfacial interactions of poly(ether ketone ketone) polymer coatings onto oxide-free phosphate films on an aluminum surface

    SciTech Connect

    Asunskis, A. L.; Sherwood, P. M. A.

    2007-07-15

    This article continues a series of papers that shows how thin (10 nm or less) oxide-free phosphate films can be formed on a number of metals. The films formed have potential as corrosion resistant films. Previous papers have shown that it is possible to extend the range of the surface coatings that can be formed by placing a thin polymer layer over the phosphate layer. In this work it is shown how the water insoluble polymer poly(ether ketone ketone) (PEKK) can be placed over a thin oxide-free phosphate film on aluminum metal. The surface and the interfaces involved were studied by valence band and core level x-ray photoelectron spectroscopy. Difference spectra in the valence band region were used to show that there is a chemical interaction between the PEKK and phosphate thin films on the aluminum metal. Three different phosphate film compositions were studied using different phosphorous containing acids, H{sub 3}PO{sub 4}, H{sub 3}PO{sub 3}, and H{sub 3}PO{sub 2}. This type of interaction illustrates the potential of phosphates to act as adhesion promoters. The valence band spectra are interpreted by calculations.

  18. Electrical and Optical Properties of Hydrogen Doped Aluminum-Doped Zinc Oxide Thin Films for Low Cost Applications.

    PubMed

    Park, Yong Seob; Park, Young; Kwon, Samyoung; Kim, Eung Kwon; Choi, Wonseok; Kim, Donguk; Kim, Minha; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were prepared on glass substrate using a magnetron sputtering system. In this work, a powder target was used as a source material for low cost applications, instead of a conventional sintered ceramic target. The effects of the hydrogen gas ratio on the electrical and optical properties of the AZO films. The hydrogen doped AZO (AZO:H) films had a hexagonal polycrystalline structure. A small amount of hydrogen gas deteriorated the electrical and optical properties of the AZO:H films. However, these properties improved, as the H2/(H2 + Ar) gas ratio increased. The AZO:H films grown at an H2/(H2+Ar) ratio of 10% showed good properties for low cost applications, such as a low resistivity of 1.35 x 10(-3) Ω-cm, high average transmittance of 83.1% in the visible range of light. PMID:27483879

  19. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    PubMed Central

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10−4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  20. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  1. Monomolecular layers and thin films of silane coupling agents by vapor-phase adsorption on oxidized aluminum

    SciTech Connect

    Kurth, D.G.; Bein, T.

    1992-08-06

    Thin films of tetraethoxysilane [TEOS], (3-bromopropyl)trimethoxysilane [BPS], trimethoxyvinylsilane [VS], and 3-(trimethoxysilyl) propyl methacrylate [TPM] on oxidized aluminum surfaces have been investigated by reflection-absorption FTIR spectroscopy, ellipsometry, contact angle, and quartz crystal microbalance (QCM) measurements. Gravimetric measurements with the QCM can reveal quantitative aspects of adsorption and film formation, even for films as thin as monolayers. Adsorption of these silane coupling agents from solution typically produces multilayer films. Vapor-phase adsorption of TEOS and TPM at room temperature results in monomolecular layers. The coupling agents VS and BPS require additional heating after the vapor-phase adsorption to initiate the hydrolysis and condensation reactions necessary for the surface attachment, which produces one to three layers. For vapor adsorbed films a packing density of 4-7 molecules/nm{sup 2} was found. The data strongly suggest that the organic moieties in several of these films have a preferential orientation on the surface; they can be viewed as two-dimensional, oligomeric siloxane networks with oriented organic chains. Subsequent heating of TPM films results in structural rearrangements; heating of TEOS results in complete condensation to SiO{sub 2} films. 43 refs., 6 figs., 4 tabs.

  2. MTBE OXIDATION BY BIFUNCTIONAL ALUMINUM

    EPA Science Inventory

    Bifunctional aluminum, prepared by sulfating zero-valent aluminum with sulfuric acid, has a dual functionality of simultaneously decomposing both reductively- and oxidatively-degradable contaminants. In this work, the use of bifunctional aluminum for the degradation of methyl te...

  3. Sol-gel deposited aluminum-doped and gallium-doped zinc oxide thin-film transparent conductive electrodes with a protective coating of reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2016-04-01

    Using a traditional sol-gel deposition technique, we successfully fabricated aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO) thin films on glass substrates. Employing a plasma treatment method as the postannealing process, we produced thin-film transparent conductive electrodes exhibiting excellent optical and electrical properties, with transmittance greater than 90% across the entire visible spectrum and the near-infrared range, as well as good sheet resistance under 200 Ω/sq. More importantly, to improve the resilience of our fabricated thin-film samples at elevated temperatures and in humid environments, we deposited a layer of reduced graphene oxide (rGO) as protective overcoating. The stability of our composite AZO/rGO and GZO/rGO samples improved substantially compared to that of their counterparts with no rGO coating.

  4. Effect of Sputtering Gas environments on the Properties of Aluminum-doped Zinc Oxide Thin Films for Photovoltaic Application

    SciTech Connect

    Chauhan, Ram Narayan; Kumar, Jitendra; Singh, C.; Anand, R. S.

    2011-10-20

    Aluminum-doped zinc oxide thin films have been deposited on glass substrates by R.F. sputtering using ZnO(98%)-Al{sub 2}O{sub 3}(2%) target in different sputtering gaseous environments, viz., Ar, Ar/O{sub 2} and Ar/N{sub 2}+H{sub 2} at 80 deg. C. These films have been studied with regard to phase, microstructure, optical absorption and sheet resistance for application in photovoltaic devices as transparent conducting electrodes. The properties of the films are shown to strongly depend on the sputtering gas(es). The films exhibit a wurtzite-type hexagonal structure with the (00.2) preferred orientation, the c-axis perpendicular to the substrate. The intensity of 00.2 diffraction peak and the average crystallite size remain almost the same when the films are prepared under pure Ar or Ar/O{sub 2} environment. However the average crystallite size increases while electrical resistance decreases with introduction of nitrogen and hydrogen in comparison to oxygen in argon. Nevertheless, the optimum value of optical transmittance and sheet resistance of the films deposited in pure argon are found to be 85-96% in the wavelength range 400-800 nm and 65 {Omega}/{open_square}, respectively.

  5. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition.

    PubMed

    Wang, Zi-Yi; Zhang, Rong-Jun; Lu, Hong-Liang; Chen, Xin; Sun, Yan; Zhang, Yun; Wei, Yan-Feng; Xu, Ji-Ping; Wang, Song-You; Zheng, Yu-Xiang; Chen, Liang-Yao

    2015-01-01

    The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the wavelength range from 250 to 1,000 nm, respectively. The refractive index of Al2O3 thin films was described by Cauchy model and the ellipsometric spectra data were fitted to a five-medium model consisting of Si substrate/SiO2 layer/Al2O3 layer/surface roughness/air ambient structure. It is found that the refractive index of Al2O3 thin films decrease with increasing film thickness and the changing trend revised after annealing. The phenomenon is believed to arise from the mechanical stress in ALD-Al2O3 thin films. A thickness transition is also found by transmission electron microscopy (TEM) and SE after 900°C annealing. PMID:25852343

  6. Epitaxial aluminum-doped zinc oxide thin films on sapphire. 1: Effect of substrate orientation

    SciTech Connect

    Srikant, V.; Sergo, V.; Clarke, D.R.

    1995-07-01

    Epitaxial thin films of Al-doped zinc oxide have been grown on sapphire substrates by pulsed laser ablation. The effect of substrate temperature, background pressure of oxygen, and substrate orientation (A, M, R, C) on the orientation relationships between ZnO and sapphire have been evaluated using on- and off-axis X-ray diffractometry. Under all growth conditions zinc oxide, on A- and C-plane sapphire, grew with the c-axis perpendicular to the substrate. In contrast, on M and R orientations of sapphire, ZnO grew with its c-axis parallel or perpendicular to the substrate depending on the substrate temperature and background pressure employed during growth. In all cases only one unique in-plane relationship between the sapphire substrate and the zinc oxide film was found with the exception of the M-plane at high substrate temperatures.

  7. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.

    PubMed

    Branquinho, Rita; Salgueiro, Daniela; Santos, Lídia; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

    2014-11-26

    Solution processing has been recently considered as an option when trying to reduce the costs associated with deposition under vacuum. In this context, most of the research efforts have been centered in the development of the semiconductors processes nevertheless the development of the most suitable dielectrics for oxide based transistors is as relevant as the semiconductor layer itself. In this work we explore the solution combustion synthesis and report on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent. Optimized dielectric layers were obtained for a water based precursor solution with 0.1 M concentration and demonstrated high capacitance, 625 nF cm(-2) at 10 kHz, and a permittivity of 7.1. These thin films were successfully applied as gate dielectric in solution processed gallium-zinc-tin oxide (GZTO) thin film transistors (TFTs) yielding good electrical performance such as subthreshold slope of about 0.3 V dec(-1) and mobility above 1.3 cm2 V(-1) s(-1). PMID:25354332

  8. Adsorption of titanium, chromium, and copper atoms on thin aluminum and magnesium oxide film surfaces

    NASA Astrophysics Data System (ADS)

    Tvauri, I. V.; Turiev, A. M.; Tsidaeva, N. I.; Gazzaeva, M. E.; Vladimirov, G. G.; Magkoev, T. T.

    2012-04-01

    Methods of Auger electron spectroscopy (AES), spectroscopy of characteristic electron energy losses (SCEEL), slow electron diffraction (SED), and contact potential difference (CPD) in ultrahigh vacuum are used to investigate the adsorption-emission properties and stability of two-component film systems formed by putting of Ti, Cr, and Cu atoms on MgO-Mo(011) and Al2O3-Mo(011) surfaces. All atoms have the properties of electronegative adsorbates. Continuous adatom monolayers are formed on the Al2O3-Mo(011) system surface, and three-dimensional islands are formed on the MgO-Mo(011) surface. The properties of monoatomic films on the oxide layer surface are close to those observed for bulk materials. No radical changes of the system properties are detected with increasing dielectric layer thickness. The thermal stability of the newly formed structures decreases in the order Ti, Cr, Cu, Al2O3(MgO), and Mo(011).

  9. Atomic layer deposition of aluminum oxide films for carbon nanotube network transistor passivation.

    PubMed

    Grigoras, Kestutis; Zavodchikova, Marina Y; Nasibulin, Albert G; Kauppinen, Esko I; Ermolov, Vladimir; Franssila, Sami

    2011-10-01

    Ultra-thin (2-5 nm thick) aluminum oxide layers were grown on non-functionalized individual single walled carbon nanotubes (SWCNT) and their bundles by atomic layer deposition (ALD) technique in order to investigate the mechanism of the coating process. Transmission electron microscopy (TEM) was used to examine the uniformity and conformality of the coatings grown at different temperatures (80 degrees C or 220 degrees C) and with different precursors for oxidation (water and ozone). We found that bundles of SWCNTs were coated continuously, but at the same time, bare individual nanotubes remained uncoated. The successful coating of bundles was explained by the formation of interstitial pores between the individual SWCNTs constituting the bundle, where the precursor molecules can adhere, initiating the layer growth. Thicker alumina layers (20-35 nm thick) were used for the coating of bottom-gated SWCNT-network based field effect transistors (FETs). ALD layers, grown at different conditions, were found to influence the performance of the SWCNT-network FETs: low temperature ALD layers caused the ambipolarity of the channel and pronounced n-type conduction, whereas high temperature ALD processes resulted in hysteresis suppression in the transfer characteristics of the SWCNT transistors and preserved p-type conduction. Fixed charges in the ALD layer have been considered as the main factor influencing the conduction change of the SWCNT network based transistors.

  10. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

    NASA Astrophysics Data System (ADS)

    Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

    2016-02-01

    We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5-10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT.

  11. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications.

    PubMed

    Skuza, J R; Scott, D W; Mundle, R M; Pradhan, A K

    2016-02-17

    We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5-10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT.

  12. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

    PubMed Central

    Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

    2016-01-01

    We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5–10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

  13. Chemical vapor deposition of aluminum oxide

    DOEpatents

    Gordon, Roy; Kramer, Keith; Liu, Xinye

    2000-01-01

    An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

  14. Ultrafine nanoporous palladium-aluminum film fabricated by citric acid-assisted hot-water-treatment of aluminum-palladium alloy film

    SciTech Connect

    Harumoto, Takashi; Tamura, Yohei; Ishiguro, Takashi

    2015-01-15

    Hot-water-treatment has been adapted to fabricate ultrafine nanoporous palladium-aluminum film from aluminum-palladium alloy film. Using citric acid as a chelating agent, a precipitation of boehmite (aluminum oxide hydroxide, AlOOH) on the nanoporous palladium-aluminum film was suppressed. According to cross-sectional scanning transmission electron microscopy observations, the ligament/pore sizes of the prepared nanoporous film were considerably small (on the order of 10 nm). Since this fabrication method only requires aluminum alloy film and hot-water with chelating agent, the ultrafine nanoporous film can be prepared simply and environmentally friendly.

  15. Atomic force microscopy identification of Al-sites on ultrathin aluminum oxide film on NiAl(110).

    PubMed

    Li, Yan Jun; Brndiar, J; Naitoh, Y; Sugawara, Y; Štich, I

    2015-12-18

    Ultrathin alumina film formed by oxidation of NiAl(110) was studied by non-contact atomic force microscopy in an ultra high vacuum at room temperature with the quest to provide the ultimate understanding of structure and bonding of this complicated interface. Using a very stiff Si cantilever with significantly improved resolution, we have obtained images of this system with unprecedented resolution, surpassing all the previous results. In particular, we were able to unambiguously resolve all the differently coordinated aluminum atoms. This is of importance as the previous images provide very different image patterns, which cannot easily be reconciled with the existing structural models. Experiments are supported by extensive density functional theory modeling. We find that the system is strongly ionic and the atomic force microscopy images can reliably be understood from the electrostatic potential which provides an image model in excellent agreement with the experiments. However, in order to resolve the finer contrast features we have proposed a more sophisticated model based on more realistic approximants to the incommensurable alumina interface.

  16. Atomic force microscopy identification of Al-sites on ultrathin aluminum oxide film on NiAl(110).

    PubMed

    Li, Yan Jun; Brndiar, J; Naitoh, Y; Sugawara, Y; Štich, I

    2015-12-18

    Ultrathin alumina film formed by oxidation of NiAl(110) was studied by non-contact atomic force microscopy in an ultra high vacuum at room temperature with the quest to provide the ultimate understanding of structure and bonding of this complicated interface. Using a very stiff Si cantilever with significantly improved resolution, we have obtained images of this system with unprecedented resolution, surpassing all the previous results. In particular, we were able to unambiguously resolve all the differently coordinated aluminum atoms. This is of importance as the previous images provide very different image patterns, which cannot easily be reconciled with the existing structural models. Experiments are supported by extensive density functional theory modeling. We find that the system is strongly ionic and the atomic force microscopy images can reliably be understood from the electrostatic potential which provides an image model in excellent agreement with the experiments. However, in order to resolve the finer contrast features we have proposed a more sophisticated model based on more realistic approximants to the incommensurable alumina interface. PMID:26588437

  17. Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films

    SciTech Connect

    Prenzel, Marina; Kortmann, Annika; Keudell, Achim von; Arcos, Teresa de los; Winter, Joerg

    2012-11-15

    Al{sub 2}O{sub 3} thin films, either amorphous or of varying degrees of crystallinity, were deposited by two-frequency radio-frequency magnetron sputtering. Film crystallinity was investigated by Fourier transform infrared spectroscopy and X-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) was employed to determine the amount of Ar naturally trapped within the films during the deposition process. A clear correlation was found between the existence of crystalline phases, as determined by XRD, and a shift towards lower binding energy positions of the Ar2p core levels of embedded gas. The shift is due to differences in the local Al{sub 2}O{sub 3} matrix (amorphous or crystalline) of the embedded gas, thus, providing an XPS fingerprint that can be used to qualitatively determine the presence or absence of crystalline phases in very thin films.

  18. Epitaxial aluminum-doped zinc oxide thin films on sapphire. 2: Defect equilibria and electrical properties

    SciTech Connect

    Srikant, V.; Sergo, V.; Clarke, D.R.

    1995-07-01

    The electrical transport properties of epitaxial ZnO films grown on different orientations of sapphire substrates have been measured as a function of partial pressure of oxygen. After equilibration, the carrier concentration is found to change from a p{sub O{sub 2}}{sup {minus}1/4} to a p{sub O{sub 2}}{sup {minus}3/8} dependence with increasing oxygen partial pressure. The partial pressure dependence is shown to be consistent with zinc vacancies being the rate-controlling diffusive species. In addition, the carrier concentration in ZnO films grown on A-, C-, and M-plane sapphire are the same but that of R-plane sapphire is systematically lower. Electron Hall mobility measurements as a function of carrier concentration for all the substrate orientations exhibit a transition from ``single-crystal`` behavior at high carrier concentrations to ``polycrystalline`` behavior at low carrier concentrations. This behavior is attributed to the effective height of potential barriers formed at the low-angle grain boundaries in the epitaxial ZnO films. The trap density at the grain boundaries is deduced to be {approximately}7 {times} 10{sup 12}/cm{sup 2}. The electron mobility, at constant carrier concentration, varies with the substrate orientation on which the ZnO films were grown. The difference is attributed to the difference in dislocation density in the films produced as a result of lattice mismatch with the different sapphire orientations.

  19. Optical constants of off-stoichiometric aluminum oxide thin film in 6-20 nm soft-X-ray/extreme ultraviolet region

    NASA Astrophysics Data System (ADS)

    Sinha, Mangalika; Sharma, Saurabh; Singh, Amol; Modi, Mohammed H.

    2016-10-01

    In this study, the optical constants of a sputter-deposited aluminum oxide thin film are measured in the soft-X-ray wavelength region of 6-20 nm using an angle-dependent X-ray reflectivity technique at the Indus-1 synchrotron radiation source. The chemical composition of the aluminum oxide thin film is analyzed by an X-ray photoelectron spectroscopy technique. Grazing incidence X-ray reflectivity results indicate that the density of the film is lower (2.93 g·cm-3) than that of bulk alumina (3.97 g·cm-3). The experimentally obtained optical constants correlate with the film composition and density. It is found that the experimentally measured delta and beta values are 5-33% higher than the tabulated values except those near the Al L edge (17 nm) region, where the experimentally obtained beta values are 7-20% lower and the delta values are 50-120% higher. This large mismatch observed between the experimental values and Henke et al. data is attributed to the reduced film density and the presence of a mixed phase of AlO x and Al2O3, as evidenced by X-ray photoelectron spectroscopy.

  20. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-01

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (Ts). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10-3 Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at Ts of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein-Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ˜110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  1. Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering.

    PubMed

    Kim, Minha; Jang, Yong-Jun; Jung, Ho-Sung; Song, Woochang; Kang, Hyunil; Kim, Eung Kwon; Kim, Donguk; Yi, Junsin; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were deposited on glass and polyimide substrates using radio frequency magnetron sputtering. We investigated the effects of the oxygen gas ratio on the properties of the AZO films for Cu(In,Ga)Se2 thin-film solar cell applications. The structural and optical properties of the AZO thin films were measured using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and UV-Visible-NIR spectrophotometry. The oxygen gas ratio played a crucial role in controlling the optical as well as electrical properties of the films. When oxygen gas was added into the film, the surface AZO thin films became smoother and the grains were enlarged while the preferred orientation changed from (0 0 2) to (1 0 0) plane direction of the hexagonal phase. An improvement in the transmittance of the AZO thin films was achieved with the addition of 2.5-% oxygen gas. The electrical resistivity was highly increased even for a small amount of the oxygen gas addition.

  2. Wet-chemical dip-coating preparation of highly oriented copper-aluminum oxide thin film and its opto-electrical characterization

    NASA Astrophysics Data System (ADS)

    Banerjee, Arghya; Chattopadhyay, Kalyan K.; Joo, Sang W.

    2011-01-01

    Transparent p-type semiconducting copper aluminum oxide thin film has been synthesized by a wet-chemical route. CuCl and AlCl 3, dissolved in HCl, are taken as starting materials. pH value of the solution is controlled by adding a measured amount of NaOH into it. Films are deposited by dip-coating technique on glass and Si substrates followed by annealing in air at 500 °C for 3 h. XRD pattern confirms the crystalline CuAlO 2 phase formation in the film and also indicates a strong (0 0 6) orientation. UV-vis spectrophotometric measurements show high transparency of the film in the visible region with a direct allowed bandgap of 3.94 eV. Electrical measurements depict the thermally activated conduction within the films. Thermoelectric measurements confirm the p-type nature of the films. Compositional analysis shows the presence of excess (nonstoichiometric) oxygen within the material, which is incorporated during the air-annealing of the film. According to defect equilibrium, this excess oxygen is predicted to cause the p-type conductivity of the film. This type of cost-effective solution-based technique is very useful for volume production of this kind of technologically important material for transparent electronic and other diverse applications.

  3. Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering.

    PubMed

    Kim, Minha; Jang, Yong-Jun; Jung, Ho-Sung; Song, Woochang; Kang, Hyunil; Kim, Eung Kwon; Kim, Donguk; Yi, Junsin; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were deposited on glass and polyimide substrates using radio frequency magnetron sputtering. We investigated the effects of the oxygen gas ratio on the properties of the AZO films for Cu(In,Ga)Se2 thin-film solar cell applications. The structural and optical properties of the AZO thin films were measured using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and UV-Visible-NIR spectrophotometry. The oxygen gas ratio played a crucial role in controlling the optical as well as electrical properties of the films. When oxygen gas was added into the film, the surface AZO thin films became smoother and the grains were enlarged while the preferred orientation changed from (0 0 2) to (1 0 0) plane direction of the hexagonal phase. An improvement in the transmittance of the AZO thin films was achieved with the addition of 2.5-% oxygen gas. The electrical resistivity was highly increased even for a small amount of the oxygen gas addition. PMID:27483888

  4. Improving the direct electron transfer in monolithic bioelectrodes prepared by immobilization of FDH enzyme on carbon-coated anodic aluminum oxide films

    NASA Astrophysics Data System (ADS)

    Castro-Muñiz, Alberto; Hoshikawa, Yasuto; Komiyama, Hiroshi; Nakayama, Wataru; Itoh, Tetsuji; Kyotani, Takashi

    2016-02-01

    The present work reports the preparation of binderless carbon-coated porous films and the study of their performance as monolithic bioanodes. The films were prepared by coating anodic aluminum oxide (AAO) films with a thin layer of nitrogen-doped carbon by chemical vapor deposition. The films have cylindrical straight pores with controllable diameter and length. These monolithic films were used directly as bioelectrodes by loading the films with D-fructose dehydrogenase (FDH), an oxidoreductase enzyme that catalyzes the oxidation of D-fructose to 5-keto-D-fructose. The immobilization of the enzymes was carried out by physical adsorption in liquid phase and with an electrostatic attraction method. The latter method takes advantage of the fact that FDH is negatively charged during the catalytic oxidation of fructose. Thus the immobilization was performed under the application of a positive voltage to the CAAO film in a FDH-fructose solution in McIlvaine buffer (pH 5) at 25 ºC. As a result, the FDH modified electrodes with the latter method show much better electrochemical response than that with the conventional physical adsorption method. Due to the singular porous structure of the monolithic films, which consists of an array of straight and parallel nanochannels, it is possible to rule out the effect of the diffusion of the D-fructose into the pores. Thus the improvement in the performance upon using the electrostatic attraction method can be ascribed not only to a higher uptake, but also to a more appropriate molecule orientation of the enzyme units on the surface of the electrodes.

  5. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

    NASA Astrophysics Data System (ADS)

    Wang, Li-Min; Wang, Chih-Yi; Jheng, Ciao-Ren; Wu, Syu-Jhan; Sai, Chen-Kai; Lee, Ya-Ju; Chiang, Ching-Yu; Shew, Bor-Yuan

    2016-08-01

    The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ɛ value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10-4 Ω cm, carrier concentration of 6.4 × 1020 cm-3, and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

  6. Frictional behavior and adhesion of Ag and Au films applied to aluminum oxide by oxygen-ion assisted Screen Cage Ion Plating (SCIP)

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis; Sliney, Harold E.

    1994-01-01

    A modified dc-diode ion plating system, by utilizing a metallic screen cage as a cathode, is introduced for coating nonconductors such as ceramics. Screen cage ion plating (SCIP) is used to apply Ag and Au lubricating films on aluminum oxide surfaces. This process has excellent ability to coat around corners to produce three-dimensional coverage of the substrate. A dramatic increase in adhesion is achieved when plating is performed in a reactive 50 percent O2 - 50 percent Ar glow discharge compared to the adhesion when plating is performed in 100 percent Ar. The presence of oxygen ion assistance contributes to the excellent adhesion as measured in a pull-type adhesion tester. The Ag and Au film adhesion is significantly increased (less than 70MPa) and generally exceeds the cohesion of the substrate such that portions of the alumina are pulled out.

  7. Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

    PubMed

    Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

    2015-10-13

    Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

  8. Optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for film dosimetry in radiotherapy

    SciTech Connect

    Schembri, V.; Heijmen, B. J. M.

    2007-06-15

    Introduction and Purpose: Conventional x-ray films and radiochromic films have inherent challenges for high precision radiotherapy dosimetry. Here we have investigated basic characteristics of optically stimulated luminescence (OSL) of irradiated films containing carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for dosimetry in therapeutic photon and electron beams. Materials and Methods: The OSL films consist of a polystyrene sheet, with a top layer of a mixture of single crystals of Al{sub 2}O{sub 3}:C, ground into a powder, and a polyester base. The total thickness of the films is 0.3 mm. Measurements have been performed in a water equivalent phantom, using 4, 6, 10, and 18 MV photon beams, and 6-22 MeV electron beams. The studies include assessment of the film response (acquired OSL signal/delivered dose) on delivered dose (linearity), dose rate (1-6 Gy/min), beam quality, field size and depth (6 MV, ranges 4x4-30x30 cm{sup 2}, d{sub max}-35 cm). Doses have been derived from ionization chamber measurements. OSL films have also been compared with conventional x-ray and GafChromic films for dosimetry outside the high dose area, with a high proportion of low dose scattered photons. In total, 787 OSL films have been irradiated. Results: Overall, the OSL response for electron beams was 3.6% lower than for photon beams. Differences between the various electron beam energies were not significant. The 6 and 18 MV photon beams differed in response by 4%. No response dependencies on dose rate were observed. For the 6 MV beam, the field size and depth dependencies of the OSL response were within {+-}2.5%. The observed inter-film response variation for films irradiated with the same dose varied from 1% to 3.2% (1 SD), depending on the measurement day. At a depth of 20 cm, 5 cm outside the 20x20 cm{sup 2} 6 and 18 MV beams, an over response of 17% was observed. In contrast to GafChromic and conventional x-ray films, the response of the Al{sub 2}O{sub 3}:C films is linear

  9. Dry lubricant films for aluminum forming.

    SciTech Connect

    Wei, J.; Erdemir, A.; Fenske, G. R.

    1999-03-30

    During metal forming process, lubricants are crucial to prevent direct contact, adhesion, transfer and scuffing of workpiece materials and tools. Boric acid films can be firmly adhered to the clean aluminum surfaces by spraying their methanol solutions and provide extremely low friction coefficient (about 0.04). The cohesion strengths of the bonded films vary with the types of aluminum alloys (6061, 6111 and 5754). The sheet metal forming tests indicate that boric acid films and the combined films of boric acid and mineral oil can create larger strains than the commercial liquid and solid lubricants, showing that they possess excellent lubricities for aluminum forming. SEM analyses indicate that boric acid dry films separate the workpiece and die materials, and prevent their direct contact and preserve their surface qualities. Since boric acid is non-toxic and easily removed by water, it can be expected that boric acid films are environmentally friendly, cost effective and very efficient lubricants for sheet aluminum cold forming.

  10. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    NASA Astrophysics Data System (ADS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-09-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al3+ films. The electrochromic performance of the films were evaluated by means of UV-vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni3+/Ni2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film.

  11. X-ray photoelectron spectroscopy study of para-substituted benzoic acids chemisorbed to aluminum oxide thin films

    SciTech Connect

    Kreil, Justin; Ellingsworth, Edward; Szulczewski, Greg

    2013-11-15

    A series of para-substituted, halogenated (F, Cl, Br, and I) benzoic acid monolayers were prepared on the native oxide of aluminum surfaces by solution self-assembly and spin-coating techniques. The monolayers were characterized by x-ray photoelectron spectroscopy (XPS) and water contact angles. Several general trends are apparent. First, the polarity of the solvent is critical to monolayer formation. Protic polar solvents produced low coverage monolayers; in contrast, nonpolar solvents produced higher coverage monolayers. Second, solution deposition yields a higher surface coverage than spin coating. Third, the thickness of the monolayers determined from XPS suggests the plane of the aromatic ring is perpendicular to the surface with the carboxylate functional group most likely binding in a bidentate chelating geometry. Fourth, the saturation coverage (∼2.7 × 10{sup 14} molecules cm{sup −2}) is independent of the para-substituent.

  12. H₂O Dissociation-Induced Aluminum Oxide Growth on Oxidized Al(111) Surfaces.

    PubMed

    Liu, Qianqian; Tong, Xiao; Zhou, Guangwen

    2015-12-01

    The interaction of water vapor with amorphous aluminum oxide films on Al(111) is studied using X-ray photoelectron spectroscopy to elucidate the passivation mechanism of the oxidized Al(111) surfaces. Exposure of the aluminum oxide film to water vapor results in self-limiting Al2O3/Al(OH)3 bilayer film growth via counter-diffusion of both ions, Al outward and OH inward, where a thinner starting aluminum oxide film is more reactive toward H2O dissociation-induced oxide growth because of the thickness-dependent ionic transport in the aluminum oxide film. The aluminum oxide film exhibits reactivity toward H2O dissociation in both low-vapor pressure [p(H2O) = 1 × 10(-6) Torr] and intermediate-vapor pressure [p(H2O) = 5 Torr] regimes. Compared to the oxide film growth by exposure to a p(H2O) of 1 × 10(-6) Torr, the exposure to a p(H2O) of 5 Torr results in the formation of a more open structure of the inner Al(OH)3 layer and a more compact outer Al2O3 layer, demonstrating the vapor-pressure-dependent atomic structure in the passivating layer.

  13. H₂O Dissociation-Induced Aluminum Oxide Growth on Oxidized Al(111) Surfaces.

    PubMed

    Liu, Qianqian; Tong, Xiao; Zhou, Guangwen

    2015-12-01

    The interaction of water vapor with amorphous aluminum oxide films on Al(111) is studied using X-ray photoelectron spectroscopy to elucidate the passivation mechanism of the oxidized Al(111) surfaces. Exposure of the aluminum oxide film to water vapor results in self-limiting Al2O3/Al(OH)3 bilayer film growth via counter-diffusion of both ions, Al outward and OH inward, where a thinner starting aluminum oxide film is more reactive toward H2O dissociation-induced oxide growth because of the thickness-dependent ionic transport in the aluminum oxide film. The aluminum oxide film exhibits reactivity toward H2O dissociation in both low-vapor pressure [p(H2O) = 1 × 10(-6) Torr] and intermediate-vapor pressure [p(H2O) = 5 Torr] regimes. Compared to the oxide film growth by exposure to a p(H2O) of 1 × 10(-6) Torr, the exposure to a p(H2O) of 5 Torr results in the formation of a more open structure of the inner Al(OH)3 layer and a more compact outer Al2O3 layer, demonstrating the vapor-pressure-dependent atomic structure in the passivating layer. PMID:26550986

  14. The Effect of Aluminum Oxide Incorporation on the Material And Electrical Properties of Hafnium Oxide on Ge

    SciTech Connect

    Sawkar-Mathur, M.; Perng, Y.-C.; Lu, J.; Blom, H.-O.; Bargar, J.; Chang, J.P.

    2009-05-27

    Hafnium aluminate thin films were synthesized by atomic layer deposition (ALD) to assess the effect of aluminum oxide incorporation on the dielectric/Ge interfacial properties. In these Hf{sub x}Al{sub y}O{sub z} thin films, the Hf to Al cation ratio was effectively controlled by changing the ratio of hafnium oxide to aluminum oxide ALD cycles, while their short range order was changed upon increasing aluminum oxide incorporation, as observed by extended x-ray absorption fine structure analysis. The incorporation of aluminum oxide was shown to improve the electrical characteristics of hafnium oxide/Ge devices, including lower interface state densities and leakage current densities.

  15. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

    SciTech Connect

    Deng, Chunqing Otto, M.; Lupascu, A.

    2014-01-27

    We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

  16. Effect of Pore Size and Film Thickness on Gold-Coated Nanoporous Anodic Aluminum Oxide Substrates for Surface-Enhanced Raman Scattering Sensor.

    PubMed

    Kassu, Aschalew; Farley, Carlton; Sharma, Anup; Kim, Wonkyu; Guo, Junpeng

    2015-11-30

    A sensitive surface enhanced Raman scattering chemical sensor is demonstrated by using inexpensive gold-coated nanoporous anodic aluminum oxide substrates. To optimize the performance of the substrates for sensing by the Surface-enhanced Raman scattering (SERS) technique, the size of the nanopores is varied from 18 nm to 150 nm and the gold film thickness is varied from 30 nm to 120 nm. The sensitivity of gold-coated nanoporous surface enhanced Raman scattering sensor is characterized by detecting low concentrations of Rhodamine 6G laser dye molecules. The morphology of the SERS substrates is characterized by atomic force microscopy. Optical properties of the nanoporous SERS substrates including transmittance, reflectance, and absorbance are also investigated. Relative signal enhancement is plotted for a range of substrate parameters and a detection limit of 10(-6) M is established.

  17. Effect of Pore Size and Film Thickness on Gold-Coated Nanoporous Anodic Aluminum Oxide Substrates for Surface-Enhanced Raman Scattering Sensor.

    PubMed

    Kassu, Aschalew; Farley, Carlton; Sharma, Anup; Kim, Wonkyu; Guo, Junpeng

    2015-01-01

    A sensitive surface enhanced Raman scattering chemical sensor is demonstrated by using inexpensive gold-coated nanoporous anodic aluminum oxide substrates. To optimize the performance of the substrates for sensing by the Surface-enhanced Raman scattering (SERS) technique, the size of the nanopores is varied from 18 nm to 150 nm and the gold film thickness is varied from 30 nm to 120 nm. The sensitivity of gold-coated nanoporous surface enhanced Raman scattering sensor is characterized by detecting low concentrations of Rhodamine 6G laser dye molecules. The morphology of the SERS substrates is characterized by atomic force microscopy. Optical properties of the nanoporous SERS substrates including transmittance, reflectance, and absorbance are also investigated. Relative signal enhancement is plotted for a range of substrate parameters and a detection limit of 10(-6) M is established. PMID:26633402

  18. Effect of Pore Size and Film Thickness on Gold-Coated Nanoporous Anodic Aluminum Oxide Substrates for Surface-Enhanced Raman Scattering Sensor

    PubMed Central

    Kassu, Aschalew; Farley, Carlton; Sharma, Anup; Kim, Wonkyu; Guo, Junpeng

    2015-01-01

    A sensitive surface enhanced Raman scattering chemical sensor is demonstrated by using inexpensive gold-coated nanoporous anodic aluminum oxide substrates. To optimize the performance of the substrates for sensing by the Surface-enhanced Raman scattering (SERS) technique, the size of the nanopores is varied from 18 nm to 150 nm and the gold film thickness is varied from 30 nm to 120 nm. The sensitivity of gold-coated nanoporous surface enhanced Raman scattering sensor is characterized by detecting low concentrations of Rhodamine 6G laser dye molecules. The morphology of the SERS substrates is characterized by atomic force microscopy. Optical properties of the nanoporous SERS substrates including transmittance, reflectance, and absorbance are also investigated. Relative signal enhancement is plotted for a range of substrate parameters and a detection limit of 10−6 M is established. PMID:26633402

  19. Oxidation kinetics of aluminum diboride

    NASA Astrophysics Data System (ADS)

    Whittaker, Michael L.; Sohn, H. Y.; Cutler, Raymond A.

    2013-11-01

    The oxidation characteristics of aluminum diboride (AlB2) and a physical mixture of its constituent elements (Al+2B) were studied in dry air and pure oxygen using thermal gravimetric analysis to obtain non-mechanistic kinetic parameters. Heating in air at a constant linear heating rate of 10 °C/min showed a marked difference between Al+2B and AlB2 in the onset of oxidation and final conversion fraction, with AlB2 beginning to oxidize at higher temperatures but reaching nearly complete conversion by 1500 °C. Kinetic parameters were obtained in both air and oxygen using a model-free isothermal method at temperatures between 500 and 1000 °C. Activation energies were found to decrease, in general, with increasing conversion for AlB2 and Al+2B in both air and oxygen. AlB2 exhibited O2-pressure-independent oxidation behavior at low conversions, while the activation energies of Al+2B were higher in O2 than in air. Differences in the composition and morphology between oxidized Al+2B and AlB2 suggested that Al2O3-B2O3 interactions slowed Al+2B oxidation by converting Al2O3 on aluminum particles into a Al4B2O9 shell, while the same Al4B2O9 developed a needle-like morphology in AlB2 that reduced oxygen diffusion distances and increased conversion. The model-free kinetic analysis was critical for interpreting the complex, multistep oxidation behavior for which a single mechanism could not be assigned. At low temperatures, moisture increased the oxidation rate of Al+2B and AlB2, but both appear to be resistant to oxidation in cool, dry environments.

  20. Oxidation dynamics of aluminum nanorods

    SciTech Connect

    Li, Ying; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2015-02-23

    Aluminum nanorods (Al-NRs) are promising fuels for pyrotechnics due to the high contact areas with oxidizers, but their oxidation mechanisms are largely unknown. Here, reactive molecular dynamics simulations are performed to study thermally initiated burning of oxide-coated Al-NRs with different diameters (D = 26, 36, and 46 nm) in oxygen environment. We found that thinner Al-NRs burn faster due to the larger surface-to-volume ratio. The reaction initiates with the dissolution of the alumina shell into the molten Al core to generate heat. This is followed by the incorporation of environmental oxygen atoms into the resulting Al-rich shell, thereby accelerating the heat release. These results reveal an unexpectedly active role of the alumina shell as a “nanoreactor” for oxidation.

  1. Oxidation dynamics of aluminum nanorods

    NASA Astrophysics Data System (ADS)

    Li, Ying; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2015-02-01

    Aluminum nanorods (Al-NRs) are promising fuels for pyrotechnics due to the high contact areas with oxidizers, but their oxidation mechanisms are largely unknown. Here, reactive molecular dynamics simulations are performed to study thermally initiated burning of oxide-coated Al-NRs with different diameters (D = 26, 36, and 46 nm) in oxygen environment. We found that thinner Al-NRs burn faster due to the larger surface-to-volume ratio. The reaction initiates with the dissolution of the alumina shell into the molten Al core to generate heat. This is followed by the incorporation of environmental oxygen atoms into the resulting Al-rich shell, thereby accelerating the heat release. These results reveal an unexpectedly active role of the alumina shell as a "nanoreactor" for oxidation.

  2. Low temperature near infrared plasmonic gas sensing of gallium and aluminum doped zinc oxide thin films from colloidal inks (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Sturaro, Marco; Della Gaspera, Enrico; Martucci, Alessandro; Guglielmi, Massimo

    2015-08-01

    We obtained Gallium-doped and Aluminum-doped Zinc Oxide nanocrystals by non aqueous colloidal heat-up synthesis. These nanocrystals are transparent in the visible range but exhibit localized surface plasmon resonances (LSPRs) in the near IR range, tunable and shiftable with dopant concentration (up to 20% mol nominal). GZO and AZO inks can be deposited by spin coating, dip coating or spray coating on glass or silicon, leading to uniform and high optical quality thin films. To enhance absorbtion in the infrared region, samples can be annealed in inert or reductant atmosphere (N2/Argon or H2 in Argon) resulting in plasmon intensity enhancement due to oxygen vacancies and conduction band electrons density increment. Then IR plasmon has been exploited for gas sensing application, according to the plasmon shifting for carrier density variations, due to electrons injection or removal by the target gas/sample chemical interactions. To obtain a functional sensor at low temperature, another treatment was investigated, involving surfanctant removal by dipping deposited films in a solution of organic acid, tipically oxalic acid in acetonitrile; such process could pave the way to obtain similar sensors deposited on plastics. Finally, GZO and AZO thin films proved sensibility to H2 and NOx, and in particular circumstances also to CO, from room temperature to 200°C. Sensibility behavior for different dopant concentration and temperture was investigated both in IR plasmon wavelengths (~2400 nm) and zinc oxide band gap (~370 nm). An enhancement in sensitivity to H2 is obtained by adding Pt nanoparticles, exploiting catalytic properties of Platinum for hydrogen splitting.

  3. Oxide film microstructure: the link between surface preparation processes and strength/durability of adhesively bonded aluminum. Final report

    SciTech Connect

    Hsia, K. Jimmy; Pearlstein, Arne J.; Scheeline, Alexander; Shang, Jian Ku

    2000-11-30

    Strength and durability of adhesive bonding of aluminum alloys structures are intrinsically determined by the surface microstructures and interfacial failure micromechanisms. The current project presents a multidisciplinary approach to addressing critical issues controlling the strength and durability of adhesive bonds of aluminum alloys. Three main thrust areas have been pursued: surface treatment technology development to achieve desirable surface microstructures; relationship between surface structure and properties of adhesive bonds; and failure mechanisms of adhesively bonded components.

  4. Platinum-Enhanced Electron Transfer and Surface Passivation through Ultrathin Film Aluminum Oxide (Al₂O₃) on Si(111)-CH₃ Photoelectrodes.

    PubMed

    Kim, Hark Jin; Kearney, Kara L; Le, Luc H; Pekarek, Ryan T; Rose, Michael J

    2015-04-29

    We report the preparation, stability, and utility of Si(111)-CH3 photoelectrodes protected with thin films of aluminum oxide (Al2O3) prepared by atomic layer deposition (ALD). The photoelectrodes have been characterized by X-ray photoelectron spectroscopy (XPS), photoelectrochemistry (Fc in MeCN, Fc-OH in H2O), electrochemical impedance spectroscopy (EIS), and cyclic voltammetry (CV) simulation. XPS analysis of the growing Al2O3 layer affords both the thickness, and information regarding two-dimensional versus three-dimensional mode of growth. Impedance measurements on Si(111)|CH3|Al2O3 devices reveal that the nascent films (5-30 Å) exhibit significant capacitance, which is attenuated upon surpassing the bulk threshold (∼30 Å). The Al2O3 layer provides enhanced photoelectrochemical (PEC) stability evidenced by an increase in the anodic window of operation in MeCN (up to +0.5 V vs Ag) and enhanced stability in aqueous electrolyte (up to +0.2 V vs Ag). XPS analysis before and after PEC confirms the Al2O3 layer is persistent and prevents surface corrosion (SiOx). Sweep-rate dependent CVs in MeCN at varying thicknesses exhibit a trend of increasingly broad features, characteristic of slow electron transport kinetics. Simulations were modeled as slow electron transfer through a partially resistive and electroactive Al2O3 layer. Lastly, we find that the Al2O3 ultrathin film serves as a support for the ALD deposition of Pt nanoparticles (d ≈ 8 nm) that enhance electron transfer through the Al2O3 layer. Surface recombination velocity (SRV) measurements on the assembled Si(111)|CH3|Al2O3-15 device affords an S value of 4170 cm s(-1) (τ = 4.2 μs) comparable to the bare Si(111)-CH3 surface (3950 cm s(-1); τ = 4.4 μs). Overall, the results indicate that high electronic quality and low surface defect densities can be retained throughout a multistep assembly of an integrated and passivated semiconductor|thin-film|metal device. PMID:25880534

  5. Oxidation and melting of aluminum nanopowders.

    PubMed

    Trunov, Mikhaylo A; Umbrajkar, Swati M; Schoenitz, Mirko; Mang, Joseph T; Dreizin, Edward L

    2006-07-01

    Recently, nanometer-sized aluminum powders became available commercially, and their use as potential additives to propellants, explosives, and pyrotechnics has attracted significant interest. It has been suggested that very low melting temperatures are expected for nanosized aluminum powders and that such low melting temperatures could accelerate oxidation and trigger ignition much earlier than for regular, micron-sized aluminum powders. The objective of this work was to investigate experimentally the melting and oxidation behavior of nanosized aluminum powders. Powder samples with three different nominal sizes of 44, 80, and 121 nm were provided by Nanotechnologies Inc. The particle size distributions were measured using small-angle X-ray scattering. Melting was studied by differential scanning calorimetry where the powders were heated from room temperature to 750 degrees C in an argon environment. Thermogravimetric analysis was used to measure the mass increase indicative of oxidation while the powders were heated in an oxygen-argon gas mixture. The measured melting curves were compared to those computed using the experimental particle size distributions and thermodynamic models describing the melting temperature and enthalpy as functions of the particle size. The melting behavior predicted by different models correlated with the experimental observations only qualitatively. Characteristic stepwise oxidation was observed for all studied nanopowders. The observed oxidation behavior was well interpreted considering the recently established kinetics of oxidation of micron-sized aluminum powders. No correlation was found between the melting and oxidation of aluminum nanopowders.

  6. Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses.

    PubMed

    Liang, Ling Yan; Cao, Hong Tao; Liu, Quan; Jiang, Ke Min; Liu, Zhi Min; Zhuge, Fei; Deng, Fu Ling

    2014-02-26

    High dielectric constant (high-k) Al2O3 thin films were prepared on ITO glasses by reactive RF-magnetron sputtering at room temperature. The effect of substrate bias on the subband structural, morphological, electrode/Al2O3 interfacial and electrical properties of the Al2O3 films is systematically investigated. An optical method based on spectroscopic ellipsometry measurement and modeling is adopted to probe the subband electronic structure, which facilitates us to vividly understand the band-tail and deep-level (4.8-5.0 eV above the valence band maximum) trap states. Well-selected substrate biases can suppress both the trap states due to promoted migration of sputtered particles, which optimizes the leakage current density, breakdown strength, and quadratic voltage coefficient of capacitance. Moreover, high porosity in the unbiased Al2O3 film is considered to induce the absorption of atmospheric moisture and the consequent occurrence of electrolysis reactions at electrode/Al2O3 interface, as a result ruining the electrical properties. PMID:24490685

  7. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

    PubMed

    Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

    2014-10-21

    Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV <10 cm s(-1)). The deduced values are close to the best reported SRV obtained by the high thermal budget process (with annealing time between 10-30 min), conventionally used for improved surface passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

  8. Stabilized chromium oxide film

    DOEpatents

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  9. Stabilized chromium oxide film

    DOEpatents

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  10. One-pot synthesis of polypyrrole film on an aluminum oxide layer by electropolymerization in the presence of ammonium borodisalicylate in acetonitrile

    NASA Astrophysics Data System (ADS)

    Toita, Sadamu; Inoue, Kenzo

    This paper describes how one-pot preparation of polypyrrole (PPy) on Al 2O 3 layer in an aluminum solid capacitor could be achieved by electropolymerization of pyrrole (Py) in acetonitrile with small amounts of water, using ammonium borodisalicylate (ABS) as a new electrolyte. The effects of monomer and electrolyte concentrations, current density, and polymerization temperature on the PPy formation on Al 2O 3 layer in aluminum solid are also discussed. Polymerization occurred smoothly to give PPy on the Al 2O 3 layer under the following conditions: [ammonium borodisalicylate] = 0.02 M, [Py] = 0.1 M, and polymerization temperature = -42 °C, current density = 10 mA cm -2. The normalized capacitance, the C p/ C 0 value of capacitor fabricated, reached more than 0.9, indicating that the porosity and surface of the Al 2O 3 layer are filled up and covered with PPy. The Raman spectra of the PPy film showed that the peak assignable to C dbnd C backbone stretching shifted to a lower wave number of 1585 cm -1. This indicates formation of the film with well-conjugated C dbnd C backbone. The SEM micrograph of PPy on Al 2O 3 layer showed a closely packed globular morphology. These results indicate that the new electrolyte, ABS, has an excellent ability to form PPy film directly on Al 2O 3 surface by electropolymerization.

  11. Formulation and method for preparing gels comprising hydrous aluminum oxide

    SciTech Connect

    Collins, Jack L.

    2014-06-17

    Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

  12. Influence of doping with third group oxides on properties of zinc oxide thin films

    SciTech Connect

    Palimar, Sowmya Bangera, Kasturi V.; Shivakumar, G. K.

    2013-03-15

    The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10{sup 3} {Omega}{sup -1} cm{sup -1}. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.

  13. Nanoscale aluminum concaves for light-trapping in organic thin-films

    NASA Astrophysics Data System (ADS)

    Goszczak, Arkadiusz Jarosław; Adam, Jost; Cielecki, Paweł Piotr; Fiutowski, Jacek; Rubahn, Horst-Günter; Madsen, Morten

    2016-07-01

    Anodic aluminum oxide (AAO) templates, fabricated from oxalic acid and phosphoric acid, lead to non-periodic nanoscale concave structures in their underlying aluminum layer, which are investigated for their field-enhancement properties by applying a thin-film polymer coating based laser ablation technique. Local ablation spots, corresponding to field enhancement on the ridge edges of the aluminum concave nanostructures, are observed in surface-covering polymer films, and confirmed with FDTD studies. The field enhancement leads to improved light absorption in the applied polymer layers, which may be used as an efficient method for enhancing the power conversion efficiency of organic solar cells.

  14. Specific features of aluminum nanoparticle water and wet air oxidation

    SciTech Connect

    Lozhkomoev, Aleksandr S. Glazkova, Elena A. Svarovskaya, Natalia V. Bakina, Olga V. Kazantsev, Sergey O. Lerner, Marat I.

    2015-10-27

    The oxidation processes of the electrically exploded aluminum nanopowders in water and in wet air are examined in the paper. The morphology of the intermediate reaction products of aluminum oxidation has been studied using the transmission electron microscopy. It was shown that the aluminum nanopowder water oxidation causes the formation of the hollow spheres with mesoporous boehmite nanosheets coating. The wedge-like bayerite particles are formed during aluminum nanopowder wet air oxidation.

  15. Specific features of aluminum nanoparticle water and wet air oxidation

    NASA Astrophysics Data System (ADS)

    Lozhkomoev, Aleksandr S.; Glazkova, Elena A.; Svarovskaya, Natalia V.; Bakina, Olga V.; Kazantsev, Sergey O.; Lerner, Marat I.

    2015-10-01

    The oxidation processes of the electrically exploded aluminum nanopowders in water and in wet air are examined in the paper. The morphology of the intermediate reaction products of aluminum oxidation has been studied using the transmission electron microscopy. It was shown that the aluminum nanopowder water oxidation causes the formation of the hollow spheres with mesoporous boehmite nanosheets coating. The wedge-like bayerite particles are formed during aluminum nanopowder wet air oxidation.

  16. Laser reflection from oxide-coated aluminum

    NASA Technical Reports Server (NTRS)

    Williams, M. D.

    1982-01-01

    The theory of reflection from an oxide-coated metal is combined with experimentally measured parameters of aluminum to produce useful amplitude and phase shift information applicable to the concentration and direction of laser light. Amplitude and phase are plotted vs angle of incidence for several important laser wavelengths in the near UV, visible, and IR spectral regions.

  17. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  18. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  19. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  20. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  1. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  2. Aluminum doped zinc oxide for organic photovoltaics

    SciTech Connect

    Murdoch, G. B.; Hinds, S.; Sargent, E. H.; Tsang, S. W.; Mordoukhovski, L.; Lu, Z. H.

    2009-05-25

    Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

  3. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  4. Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

    PubMed Central

    2014-01-01

    Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

  5. Fast electromigration crack in nanoscale aluminum film

    SciTech Connect

    Emelyanov, O. A. Ivanov, I. O.

    2014-08-14

    The current-induced breakage of 20 nm thin aluminum layers deposited onto capacitor grade polypropylene (PP) films is experimentally studied. Biexponential current pulses of different amplitude (10–15 A) and duration (0.1–1 μs) were applied to the samples. Breakage occurred after fast development of electromigrating ∼200 nm-wide cracks with initial propagation velocity of ∼1 m/s under a high current density of ∼10{sup 12 }A/m{sup 2}. The cracks stopped when their lengths reached 250–450 μm. This behavior is explained by the balance of electromigration and stress-induced atomic fluxes.

  6. The Interaction of Aluminum with Poly[2-(3-thienyl)ethanol n-butoxycarbonylmethylurethane] Films for Light-Emitting Diode Applications

    NASA Astrophysics Data System (ADS)

    Whitten, James; Seung, Hongyeul

    1999-11-01

    Photoelectron spectroscopy measurements have been performed to investigate the early stages of interaction of thermally evaporated aluminum with spin-cast films of poly[2-(3-thienyl)ethanol n-butoxycarbonylmethlyurethane], hereafter referred to as PURET. Previous work has shown this polymer to have applications as an organic light-emitting diode (LED). X-ray photoelectron spectroscopy (XPS) results from aluminum deposited in ultrahigh vacuum on PURET films indicate that the first two to three monolayers worth of aluminum is oxidized by the polymer and, in fact, has a spectroscopic signature resembling that of aluminum oxide. As thicker layers of aluminum are formed, however, their spectra are indicative of metallic aluminum. These results suggest strong interaction of aluminum with the carbonyl oxygen atoms of the polymer. Comparable studies on poly[3-hexylthiophene] films indicate significantly less aluminum oxidation. Similarities and differences between the two systems will be discussed.

  7. Aluminum-silver alloy films for solar reflectors

    NASA Astrophysics Data System (ADS)

    Adams, R. O.; Nordin, C. W.; Masterson, K. D.

    1980-05-01

    Films of aluminum silver alloys were formed using triode sputtering. Films with a wide variety of composition were produced and evaluated. Films deposited at low substrate temperatures had a high specular reflectance. At higher temperatures two phase alloys formed which had rough low reflecting surfaces.

  8. Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Fryauf, David M.; Phillips, Andrew C.; Kobayashi, Nobuhiko P.

    2013-09-01

    An urgent demand remains in astronomy for high-reflectivity silver mirrors that can withstand years of exposure in observatory environments. The University of California Observatories Astronomical Coatings Lab has undertaken development of protected silver coatings suitable for telescope mirrors that maintain high reflectivity at wavelengths from 340 nm through the mid-infrared spectrum. We present initial results of an investigation into whether plasma-enhanced atomic layer deposition (PEALD) can produce superior protective layers of transparent dielectrics. Several novel coating recipes have been developed with ion-assisted electron beam deposition (IAEBD) of materials including yttrium fluoride, and oxides of yttrium, hafnium, and titanium. Samples of these mirror coatings were covered with conformal layers of aluminum oxide (AlOx) deposited by PEALD using trimethylaluminum as a metal precursor and oxygen as an oxidant gas activated by remote plasma. Samples of coating recipes with and without PEALD oxide undergo aggressive environmental testing, including high temperature/high humidity (HTHH), in which samples were exposed to an environment of 80% humidity at 80°C for ten days in a simple test set-up. HTHH testing show visible results suggesting that the PEALD oxide offers enhanced robust protection against chemical corrosion and moisture from an accelerated aging environment. Mirror samples are further characterized by reflectivity/absorption and atomic force microscopy before and after deposition of oxide coatings. AlOx is suitable for many applications and has been the initial material choice for this study, although we also tried TiOx and HfOx. Further experimentation based on these initial results is on-going.

  9. Heterogeneous reaction of ozone with aluminum oxide

    NASA Technical Reports Server (NTRS)

    Keyser, L. F.

    1976-01-01

    Rates and collision efficiencies for ozone decomposition on aluminum oxide surfaces were determined. Samples were characterized by BET surface area, X-ray diffraction, particle size, and chemical analysis. Collision efficiencies were found to be between 2 times 10 to the -10 power and 2 times 10 to the -9 power. This is many orders of magnitude below the value of 0.000001 to 0.00001 needed for appreciable long-term ozone loss in the stratosphere. An activation energy of 7.2 kcal/mole was found for the heterogeneous reaction between -40 C and 40 C. Effects of pore diffusion, outgassing and treatment of the aluminum oxide with several chemical species were also investigated.

  10. Formation of Anodic Aluminum Oxide with Branched and Meshed Pores.

    PubMed

    Kim, Byeol; Lee, Jin Seok

    2016-06-01

    Anodic aluminum oxide (AAO), with a self-ordered hexagonal array, is important for various applications in nanofabrication including as the fabrication of nanotemplates and other nanostructures. With the consideration, there have been many efforts to control the characteristic parameters of porous anodic alumina by adjustment of the anodizing conditions such as the electrolyte, temperature, applied potential, and Al purity. In particular, impurities in Al are changing the morphology of an alumina film; however, the formation mechanism has not yet been explained. In this work, we anodized a high purity (99.999%, Al(high)) and low purity (99.8%, Al(low)) aluminum foil by a two-step anodization process in an oxalic acid solution or phosphoric acid. It was found that the purity of aluminum foil has influenced the morphology of the alumina film resulting in branched and meshed pores. Also, electrochemical analysis indicated that the branched and meshed pores in the low-purity Al foil formed by the presence of impurities. Impurities act as defects and change the general growth mechanism for pore formation by inducing an electric field imbalance during anodization. This work contributes to the research field of topographical chemistry and applied fields including nanofabrication. PMID:27427755

  11. Recovery of aluminum alum from waste anode-oxidizing solution

    SciTech Connect

    Lin, S.H.; Lo, M.C.

    1998-12-31

    Recovery of aluminum alum (aluminum ammonium sulfate) by crystallization from waste anode-oxidizing solution in the aluminum surface finishing industry was investigated in this study. Effects of various operating conditions including the mole ratio of ammonium hydroxide and aluminum ion, temperature and seed alum dosage on the aluminum alum formation, acid recovery and aluminum ion removal were examined. Both one- and two-step processes of crystallization were employed in synthesizing the aluminum alum and in the meantime in reducing the aluminum ion concentration in the waste anode-oxidizing solution. Based on the test results, optimum operating conditions were recommended for efficient operation of the crystallization process. The residual acid solution after crystallization was found suitable for reuse in the anode-oxidizing process.

  12. Interface effects on the adhesion of thin aluminum films

    SciTech Connect

    Schneider, J.A.; Guthrie, S.; Moody, N.R.

    1997-07-01

    Differences in the adhesion and fracture toughness of aluminum films on sapphire due to the presence of controlled contaminants are being investigated. Adhesion is evaluated by use of nanoindentation and continuous scratch tests. A comparison was made of the properties of textured thin films of aluminum (178 to 1890 nm) that were vapor deposited onto (0001) oriented sapphire substrates. A very thin (10 {angstrom}) layer of carbon was deposited at the interface of selected samples prior to the vapor deposition of the aluminum. Spalling was observed during continuous scratch testing in specimens with carbon at the interface but not in specimens without carbon at the interface.

  13. Nanostructure of aluminum oxide inclusion and formation of hydrogen bubbles in molten aluminum.

    PubMed

    Zeng, Jianmin; Li, Dezhi; Kang, Minglong; He, Huan; Hu, Zhiliu

    2013-10-01

    Hydrogen in molten aluminum is one of the major factors that lead to pore formation in the solidification process of aluminum castings. Previous research showed that aluminum oxide inclusion had a close correlation with the hydrogen content in molten aluminum. Though some researchers thought there must have been a relationship between surface morphology of the inclusion and hydrogen concentration in molten aluminum, very few documents have reported on the surface property of aluminum oxide inclusion. In the present work, AFM (Atomic Force Microscope) was first used to investigate surface morphology of aluminum oxide inclusion in molten aluminum. It was found that there were a large number of nanoscale micropores on the surface of aluminum oxide inclusion. The interior of the micropores was approximated as a tapered shape. These micropores were thought to be helpful to heterogeneous nucleation for hydrogen atoms aggregation because they provided necessary concentration fluctuation and energy undulation for the growth of hydrogen bubbles. Based on the nanostructure observed on the surface of aluminum oxide inclusion, a theoretical model was developed to describe the hydrogen pore formation in aluminum casting under the condition of heterogeneous nucleation.

  14. Formation of anodic aluminum oxide with serrated nanochannels.

    PubMed

    Li, Dongdong; Zhao, Liang; Jiang, Chuanhai; Lu, Jia G

    2010-08-11

    We report a simple and robust method to self-assemble porous anodic aluminum oxide membranes with serrated nanochannels by anodizing in phosphoric acid solution. Due to high field conduction and anionic incorporation, an increase of anodizing voltage leads to an increase of the impurity levels and also the field strength across barrier layer. On the basis of both experiment and simulation results, the initiation and formation of serrated channels are attributed to the evolution of oxygen gas bubbles followed by plastic deformation in the oxide film. Alternating anodization in oxalic and phosphoric acids is applied to construct multilayered membranes with smooth and serrated channels, demonstrating a unique way to design and construct a three-dimensional hierarchical system with controllable morphology and composition. PMID:20617804

  15. Ester oxidation on an aluminum surface using chemiluminescence

    NASA Technical Reports Server (NTRS)

    Jones, William R., Jr.; Meador, Michael A.; Morales, Wilfredo

    1986-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin film microoxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing .001 M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period, or the time to reach one-half of maximum intensity was inversely proportional to test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  16. Solidification behavior of undercooled liquid aluminum oxide

    SciTech Connect

    Weber, J.K.R.; Anderson, C.D.; Merkley, D.R.; Nordine, P.C.

    1995-03-01

    Solidification of aluminum oxide from undercooled melts was investigated in containerless experiments. Specimens were levitated in a gas jet, stabilized with an acoustic positioning device, and melted with cw CO{sub 2} laser beams. Cooling curves were obtained by optical pyrometry when the laser intensity was reduced. The materials examined were high-purity Verneuil sapphire, 99.5% polycrystalline alumina, and oxide materials recovered from the effluent of an aluminum-fueled rocket motor. The degree of undercooling, the apparent temperature behavior during the thermal arrest on solidification, and the structure of the materials formed were different in argon and oxygen atmospheres. Undercooling of the sapphire and alumina materials was 360 {+-} 10 K in an oxygen atmosphere and approximately 450 K in argon. Melting and solidification of high-purity sapphire resulted in a dendritic and porous polycrystalline material in oxygen. Dense, larger crystals were obtained in argon. Products formed from 99.5% alumina were discolored and the cores were white, indicating impurity segregation effects. More reproducible behavior was observed for the sapphire and 99.5% alumina than for the tungsten-contaminated rocket motor effluent materials.

  17. Effect of an oxygen plasma on uncoated thin aluminum reflecting films

    NASA Technical Reports Server (NTRS)

    Parsons, Roger L.; Gulino, Daniel A.

    1987-01-01

    Thin aluminum films were considered for use as a reflective surface for solar collectors on orbiting solar dynamic power systems. A matter of concern is the durability of such reflective coatings against oxidative attack by highly reactive neutral atomic oxygen, which is the predominate chemical specie in low Earth orbit. Research to date was aimed at evaluating the protective merit of thin dielectric coatings over the aluminum or other reflective metals. However, an uncoated aluminum reflector may self-protect by virtue of the oxide formed from its exposed surface, which constitutes a physical barrier to further oxidation. This possibility was investigated, and an attempt was made to characterize the effects of atomic oxygen on thin Al films using photomicrographs, scanning electron microscopy, spectrophotometry, Auger analysis, and mass measurements. Data collected in a parallel effort is discussed for its comparative value. The results of the investigation of uncoated aluminum supported the self-protection hypothesis, and importantly, it was found that long term specular reflectance for uncoated aluminum exceeded that of Al and Ag reflectors with dielectric coatings.

  18. Alkaline oxide conversion coatings for aluminum alloys

    SciTech Connect

    Buchheit, R.G.

    1996-02-01

    Three related conversion coating methods are described that are based on film formation which occurs when aluminum alloys are exposed to alkaline Li salt solutions. Representative examples of the processing methods, resulting coating structure, composition and morphology are presented. The corrosion resistance of these coatings to aerated 0.5 M NaCl solution has been evaluated as a function of total processing time using electrochemical impedance spectroscopy (EIS). This evaluation shows that excellent corrosion resistance can be uniformly achieved using no more than 20 minutes of process time for 6061-T6. Using current methods a minimum of 80 minutes of process time is required to get marginally acceptable corrosion resistance for 2024-T3. Longer processing times are required to achieve uniformly good corrosion resistance.

  19. Lithography-free transmission filters at ultraviolet frequencies using ultra-thin aluminum films

    NASA Astrophysics Data System (ADS)

    Li, Zhongyang; Butun, Serkan; Aydin, Koray

    2016-06-01

    Aluminum allows for significant plasmon responses in ultraviolet (UV) regime of spectrum, where conventional plasmonic materials such as silver and gold lack plasmonic behavior due to their inherent dissipative limitation from lower plasmon frequency and inter-band transition. Such UV plasmonic resonance based on aluminum nanostructures could be challenging due to the smaller feature size of nanoscale resonator and remarkable sensitivity to oxidization. Here we theoretically and experimentally demonstrate lithography-free transmission filters using triple layers of continuous ultra-thin Al and dielectric films. Our proposed transmission filter is a triple-layer Fabry-Perot cavity and operates from 2.5 to 5.5 eV with bandwidth down to 0.5 eV and transmission amplitude up to 50%. Such flat Al ultra-thin film coatings suggest the use of aluminum as low-cost UV filters and UV optoelectronics as well as structural coloring applications.

  20. Surface films produced by cathodic polarization of aluminum

    SciTech Connect

    Lin, Ching Feng; Hebert, K.R.; Porter, M.D. |

    1994-01-01

    Cathodic polarization of aluminum in acid solution produces a surface film which was studied using infrared reflectance spectroscopy (IRS), and quartz crystal microbalance (QCM), and capacitance measurements. According to the QCM results, deposition of the film began after passage of 7.2 mC/cm{sup 2} of cathodic charge at a potential of {minus}2.0 V. This charge was consistent with IRS and capacitance measurements. The film grew at an approximately constant rate with time, indicating that its ionic conduction resistance is small. Also, the linear increase of the reciprocal capacitance as a function of film mass is consistent with film growth occurring uniformly across the electrode surface. IRS showed that the cathodic film is an amorphous aluminum hydroxide or oxyhydroxide which contains absorbed water; QCM stripping measurements found that there was at least one water molecule per aluminum ion. This extensive hydration is perhaps related to the relatively low ion transport resistance. Mass transport calculations indicated that the film was formed by direct electrochemical growth and not by precipitation.

  1. Growth behavior of anodic oxide formed by aluminum anodizing in glutaric and its derivative acid electrolytes

    NASA Astrophysics Data System (ADS)

    Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Suzuki, Ryosuke O.

    2014-12-01

    The growth behavior of anodic oxide films formed via anodizing in glutaric and its derivative acid solutions was investigated based on the acid dissociation constants of electrolytes. High-purity aluminum foils were anodized in glutaric, ketoglutaric, and acetonedicarboxylic acid solutions under various electrochemical conditions. A thin barrier anodic oxide film grew uniformly on the aluminum substrate by glutaric acid anodizing, and further anodizing caused the film to breakdown due to a high electric field. In contrast, an anodic porous alumina film with a submicrometer-scale cell diameter was successfully formed by ketoglutaric acid anodizing at 293 K. However, the increase and decrease in the temperature of the ketoglutaric acid resulted in non-uniform oxide growth and localized pitting corrosion of the aluminum substrate. An anodic porous alumina film could also be fabricated by acetonedicarboxylic acid anodizing due to the relatively low dissociation constants associated with the acid. Acid dissociation constants are an important factor for the fabrication of anodic porous alumina films.

  2. Combined in situ PM-IRRAS/QCM studies of water adsorption on plasma modified aluminum oxide/aluminum substrates

    NASA Astrophysics Data System (ADS)

    Giner, Ignacio; Maxisch, Michael; Kunze, Christian; Grundmeier, Guido

    2013-10-01

    Water adsorption on plasma modified oxyhydroxide covered aluminum surfaces was analyzed by means of a set-up combining in situ photoelastic modulated infrared reflection absorption spectroscopy (PM-IRRAS) and quartz crystal microbalance (QCM) in a low-temperature plasma cell. The chemical structure of the surface before and after the plasma treatment was moreover characterized by means of X-ray photoelectron spectroscopy (XPS) analysis. The surface chemistry of oxide covered aluminum was modified by oxidative and reductive low-temperature plasma pre-treatments. The Ar-plasma treatment reduced the surface hydroxyl density and effectively removed adsorbed organic contaminations. Surface modification by means of a water plasma treatment led to an increased surface hydroxyl density as well as an increase of the thickness of the native oxide film. The adsorption of water at atmospheric pressures on plasma modified aluminum surfaces led to a superimposition of reversible water layer adsorption and a simultaneous increase of the oxyhydroxide film thickness as a result of a chemisorption process. The amount of physisorbed water increased with the surface hydroxyl density whereas the chemisorption process was most significant for the surface after Ar-plasma treatment and almost negligible for the already water plasma treated surface.

  3. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  4. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  5. Metal oxide films on metal

    DOEpatents

    Wu, Xin D.; Tiwari, Prabhat

    1995-01-01

    A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

  6. Porous Anodic Aluminum Oxide with Serrated Nanochannels

    NASA Astrophysics Data System (ADS)

    Li, Dongdong; Zhao, Liang; Lu, Jia G.

    2010-03-01

    Self-assembled nanoporous anodic aluminum oxide (AAO) membrane with straight channels has long been an important tool in synthesizing highly ordered and vertically aligned quasi-1D nanostructures for various applications. Recently shape-selective nanomaterials have been achieved using AAO as a template. It is envisioned that nanowires with multi-branches will significantly increase the active functional sites for applications as sensors, catalysts, chemical cells, etc. Here AAO membranes with serrated nanochannels have been successfully fabricated via a two-step annodization method. The serrated channels with periodic intervals are aligned at an angle of ˜25^circ along the stem channels. The formation of the serrated channels is attributed to the evolution of oxygen gas bubbles and the resulted plastic deformation in oxide membrane. In order to reveal the inside channel structure, Platinum are electrodeposited into the AAO template. The as-synthesized serrated Pt nanowires demonstrate a superior electrocatalytic activity. This is attributed to the enhanced electric field strength around serrated tips as shown in the electric field simulation by COMOSL. Moreover, hierarchical serrated/straight hybrid structures can be constructed using this simple and novel self assembly technique.

  7. Formation regularities of AlOOH hollow spheres during aluminum nanopowder water oxidation

    NASA Astrophysics Data System (ADS)

    Lozhkomoev, Aleksandr S.; Glazkova, Elena A.; Svarovskaya, Natalia V.; Bakina, Olga V.; Kazantsev, Sergey O.; Lerner, Marat I.

    2015-10-01

    There described a novel environmentally friendly synthesis route of micro/nanostructured hollow spheres of AlOOH by oxidation of Al nanopowder in pure water under mild processing conditions. The reaction kinetics of the aluminum nanopowder interaction with water was studied using the method of continuous recording of suspension pH and temperature. There observed the change in Al3+ concentration in the reaction medium and the rate of hydrogen release as well as TEM investigations of the intermediate reaction products at different stages of the process were performed. It is shown that AlOOH hollow spheres are formed through the aluminum core dissolution, Al3+ ion diffusion through the surface oxide film and AlOOH nanosheets formation on the surface of the precursor oxide film.

  8. Electron-stimulated desorption study of hydrogen-exposed aluminum films

    NASA Technical Reports Server (NTRS)

    Park, CH.; Bujor, M.; Poppa, H.

    1984-01-01

    H2 adsorption of evaporated clean and H2-exposed aluminum films is investigated by using the electron-stimulated desorption (ESD) method. A strong H(+)ESD signal is observed on a freshly evaporated aluminum surface which is clean according to previously proposed cleanlines criteria. An increased H(+) yield on H2 exposure is also observed. However, the increasing rate of H(+) emission could be directly correlated with small increases in H2O partial pressure during H2 exposure. It is proposed that the oxidation of aluminum by water vapor and subsequent adsorption of H2 or water is the primary process of the enhanced high H(+) yield during H2 exposure.

  9. Methods for both coating a substrate with aluminum oxide and infusing the substrate with elemental aluminum

    DOEpatents

    Choi, Jung-Pyung; Weil, Kenneth Scott

    2016-11-01

    Methods of aluminizing the surface of a metal substrate. The methods of the present invention do not require establishment of a vacuum or a reducing atmosphere, as is typically necessary. Accordingly, aluminization can occur in the presence of oxygen, which greatly simplifies and reduces processing costs by allowing deposition of the aluminum coating to be performed, for example, in air. Embodiments of the present invention can be characterized by applying a slurry that includes a binder and powder granules containing aluminum to the metal substrate surface. Then, in a combined step, a portion of the aluminum is diffused into the substrate and a portion of the aluminum is oxidized by heating the slurry to a temperature greater than the melting point of the aluminum in an oxygen-containing atmosphere.

  10. BONDING ALUMINUM METALS

    DOEpatents

    Noland, R.A.; Walker, D.E.

    1961-06-13

    A process is given for bonding aluminum to aluminum. Silicon powder is applied to at least one of the two surfaces of the two elements to be bonded, the two elements are assembled and rubbed against each other at room temperature whereby any oxide film is ruptured by the silicon crystals in the interface; thereafter heat and pressure are applied whereby an aluminum-silicon alloy is formed, squeezed out from the interface together with any oxide film, and the elements are bonded.

  11. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  12. Sub-surface oxide features at the aluminum-sapphire interface after low temperature annealing

    NASA Astrophysics Data System (ADS)

    Dutta, Sreya

    This work focuses on the formation of sub-surface oxide features that form at the aluminum-sapphire interface during a low temperature heat-treatment. The features consist of two parts, stable alpha-alumina ridges on the substrate, and faceted pyramidal structures composed of thin, low-temperature oxide shells that are bounded by the ridges. It is surprising to observe the formation of thermodynamically stable alpha-alumina at a low temperature. The ridges are epitaxial with the (0001) sapphire substrate and the overlying metal. The pyramidal features resemble closely the Wulff shape in aluminum. Experiments show that these features are underlying the annealing hillocks. This work is a detailed study of such oxide interfacial features associated with hollow hillocks. At the annealing temperatures (below the melting point of aluminum), the aluminum thin film is subjected to compressive stresses arising from the thermal expansion coefficient mismatch and this is aided by dewetting at the aluminum-sapphire interface. Creep cavitation and grain boundary sliding are postulated to help in the cavity formation. Annealing holes are also observed in the thin films. Two different types of holes are seen: dendritic branched holes and hexagonal faceted holes (drums). At lower temperature and thickness, dendritic holes are seen to be formed at the grain boundaries. The drums form within the grains at higher temperatures and in thicker films. The drums have a surface oxide layer suspended on the top. It is postulated that clustering of vacancies due to the presence of irregularities, defects, and dislocations at the interface as well as dewetting causes the nucleation of the drums at the interface. Numerous hillock-hole couples were seen. Thinning of the metal in areas near the hillocks could possibly aid in the hole formation process. It is speculated that the hole growth occurred during the cooling stage when the film was subjected to tensile stresses. Another interesting

  13. Model for anodic film growth on aluminum with coupled bulk transport and interfacial reactions.

    PubMed

    DeWitt, Stephen; Thornton, Katsuyo

    2014-05-13

    Films grown through the anodic oxidation of metal substrates are promising for applications ranging from solar cells to medical devices, but the underlying mechanisms of anodic growth are not fully understood. To provide a better understanding of these mechanisms, we present a new 1D model for the anodization of aluminum. In this model, a thin space charge region at the oxide/electrolyte interface couples the bulk ionic transport and the interfacial reactions. Charge builds up in this region, which alters the surface overpotential until the reaction and bulk fluxes are equal. The model reactions at the oxide/electrolyte interface are derived from the Våland-Heusler model, with modifications to allow for deviations from stoichiometry at the interface and the saturation of adsorption sites. The rate equations and equilibrium concentrations of adsorbed species at the oxide/electrolyte interface are obtained from the reactions using Butler-Volmer kinetics, whereas transport-limited reaction kinetics are utilized at the metal/oxide interface. The ionic transport through the bulk oxide is modeled using a newly proposed cooperative transport process, the counter-site defect mechanism. The model equations are evolved numerically. The model is parametrized and validated using experimental data in the literature for the rate of ejection of aluminum species into the electrolyte, embedded charge at the oxide/electrolyte interface, and the barrier thickness and growth rate of porous films. The parametrized model predicts that the embedded charge at the oxide/electrolyte interface decreases monotonically for increasing electrolyte pH at constant current density. The parametrized model also predicts that the embedded charge during potentiostatic anodization is at its steady-state value; the embedded charge at any given time is equal to the embedded charge during galvanostatic anodization at the same current. In addition to simulations of anodized barrier films, this model can be

  14. Optimization study of the femtosecond laser-induced forward-transfer process with thin aluminum films

    NASA Astrophysics Data System (ADS)

    Bera, Sudipta; Sabbah, A. J.; Yarbrough, J. M.; Allen, C. G.; Winters, Beau; Durfee, Charles G.; Squier, Jeff A.

    2007-07-01

    The parameters for an effective laser-induced forward-transfer (LIFT) process of aluminum thin films using a femtosecond laser are studied. Deposited feature size as a function of laser fluence, donor film thickness, quality of focus, and the pulse duration are varied, providing a metric of the most desirable conditions for femtosecond LIFT with thin aluminum films.

  15. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    SciTech Connect

    Fiorentino, Giuseppe Morana, Bruno; Forte, Salvatore; Sarro, Pasqualina Maria

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  16. Photoluminescence characteristics of rare earth-doped nanoporous aluminum oxide

    NASA Astrophysics Data System (ADS)

    de Azevedo, W. M.; de Carvalho, D. D.; de Vasconcelos, E. A.; da Silva, E. F.

    2004-07-01

    In this work we present photoluminescence characterization of rare earth ion-doped nanoporous aluminum oxide synthesized by the anodization process in diverse solvents. We find that the luminescence of doped aluminum oxide strongly depends on the synthesis medium. When synthesized in an inorganic acid only rare earth fluorescence is present, whereas nanoporous aluminum oxide synthesized in organic solvent presents two strong unexpected luminescence emission lines, one at 429 nm and the other at 491 nm, with quite long decay time when excited with long wavelength ultraviolet light. The results suggest that light simulation of primary colors and chromaticity control of the emitted light can be done by the a combination of different rare earth ions present in the sample.

  17. Morphology and water-barrier properties of silane films on aluminum and silicon

    SciTech Connect

    Pan, Guirong; Schaefer, Dale W.

    2010-12-03

    The goal of this study is to understand the effect of the substrate on the morphology and water-barrier properties of bis-silane films. Silane films are deposited on both Si and Al. Neutron reflectivity is used to assess the effect of hydrothermal conditioning on the films. Aluminum on silicon (no silane) was characterized first to facilitate understanding of the more complicated silane on Al-coated Si. A 200-{angstrom} Al layer with 55-{angstrom} oxide covers the surface of the silicon wafer. The reflectivity data show that water penetrates into the oxide layer. Silane films deposited on either Al or Si substrates have similar bulk and top-surface morphology. Studies of silanes on Si wafers, therefore, can be generalized to include Al. The substrate-silane interface, however, does depend on both the substrate and the silane. Because pH of the bis-sulfur silane solution is outside of the stability range for Al{sub 2}O{sub 3}, dissolution of the thin oxide film occurs during solution deposition. A water-depletion area is formed at the interface region due to this reaction.

  18. Fast response hydrogen sensors based on anodic aluminum oxide with pore-widening treatment

    NASA Astrophysics Data System (ADS)

    Wu, Shuanghong; Zhou, Han; Hao, Mengmeng; Wei, Xiongbang; Li, Shibin; Yu, He; Wang, Xiangru; Chen, Zhi

    2016-09-01

    Fast response hydrogen sensors operating at room temperature based on nanoporous palladium (Pd) films supported by treated anodic aluminum oxide (AAO) template have been demonstrated. It was found that the nanoporous Pd film had a quicker and reversible response by a 30-min pore-widening treatment of the AAO template, due to its faster absorption and desorption of hydrogen. We obtained a sensor response time as short as 14 s at 1.4% hydrogen concentration with the 30-min pore-widening treatment of AAO template. The sensor exhibited very good performance at hydrogen concentrations from 0.1% to 2%.

  19. The Strength of the Metal. Aluminum Oxide Interface

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1984-01-01

    The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

  20. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    NASA Astrophysics Data System (ADS)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-09-01

    Thin-film polycrystalline silicon ( pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  1. The effect of surface oxide layer on the rate of hydrogen emission from aluminum and its alloys in a high vacuum

    NASA Technical Reports Server (NTRS)

    Makarova, V. I.; Zyabrev, A. A.

    1979-01-01

    The influence of surface oxide layers on the kinetics of hydrogen emission at the high vacuum of 10 to the minus 8th power torr was investigated at temperatures from 20 to 450 C using samples of pure AB00 aluminum and the cast alloy AMg. Cast and deformed samples of AMts alloy were used to study the effect of oxide film thickness on the rate of hydrogen emission. Thermodynamic calculations of the reactions of the generation and dissociation of aluminum oxide show that degasification at elevated temperatures (up to 600 C) and high vacuum will not reduce the thickness of artificially-generated surface oxide layers on aluminum and its alloys.

  2. Identity of Passive Film Formed on Aluminum in Li-ion BatteryElectrolytes with LiPF6

    SciTech Connect

    Zhang, Xueyuan; Devine, T.M.

    2006-09-01

    The passive film that forms on aluminum in 1:1 ethylene carbonate + ethylmethyl carbonate with 1.2M LiPF{sub 6} and 1:1 ethylene carbonate + dimethyl carbonate with 1.0M LiPF{sub 6} was investigated by a combination of electrochemical quartz crystal microbalance measurements (EQCM), electrochemical impedance spectroscopy (EIS), and x-ray photoelectron spectroscopy. During anodic polarization of aluminum a film of AlF{sub 3} forms on top of the air-formed oxide, creating a duplex, or two-layered film. The thickness of the AlF{sub 3} increases with the applied potential. Independent measurements of film thickness by EQCM and EIS indicate that at a potential of 5.5V vs. Li/Li{sup +}, the thickness of the AlF{sub 3} is approximately 1 nm.

  3. Thick film fabrication of aluminum nitride microcircuits. Final report

    SciTech Connect

    Perdieu, L.H.

    1994-03-01

    A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

  4. Low temperature aluminum nitride thin films for sensory applications

    NASA Astrophysics Data System (ADS)

    Yarar, E.; Hrkac, V.; Zamponi, C.; Piorra, A.; Kienle, L.; Quandt, E.

    2016-07-01

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d33,f) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ɛr) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e31,f|) of 1.39 ± 0.01 C/m2 was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  5. Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals

    DOEpatents

    Buonsanti, Raffaella; Milliron, Delia J

    2015-02-24

    The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

  6. Magnetic composites based on hybrid spheres of aluminum oxide and superparamagnetic nanoparticles of iron oxides

    NASA Astrophysics Data System (ADS)

    Braga, Tiago P.; Vasconcelos, Igor F.; Sasaki, José M.; Fabris, J. D.; de Oliveira, Diana Q. L.; Valentini, Antoninho

    2010-03-01

    Materials containing hybrid spheres of aluminum oxide and superparamagnetic nanoparticles of iron oxides were obtained from a chemical precursor prepared by admixing chitosan and iron and aluminum hydroxides. The oxides were first characterized with scanning electron microscopy, X-ray diffraction, and Mössbauer spectroscopy. Scanning electron microscopy micrographs showed the size distribution of the resulting spheres to be highly homogeneous. The occurrence of nano-composites containing aluminum oxides and iron oxides was confirmed from powder X-ray diffraction patterns; except for the sample with no aluminum, the superparamagnetic relaxation due to iron oxide particles were observed from Mössbauer spectra obtained at 298 and 110 K; the onset six line-spectrum collected at 20 K indicates a magnetic ordering related to the blocking relaxation effect for significant portion of small spheres in the sample with a molar ratio Al:Fe of 2:1.

  7. Drilling of aluminum and copper films with femtosecond double-pulse laser

    NASA Astrophysics Data System (ADS)

    Wang, Qinxin; Luo, Sizuo; Chen, Zhou; Qi, Hongxia; Deng, Jiannan; Hu, Zhan

    2016-06-01

    Aluminum and copper films are drilled with femtosecond double-pulse laser. The double-pulse delay is scanned from -75 ps to 90 ps. The drilling process is monitored by recording the light transmitted through the sample, and the morphology of the drilled holes is analyzed by optical microscopy. It is found that, the breakthrough time, the hole evolution during drilling, the redeposited material, the diameters of the redeposited area and the hole, change as functions of double-pulse delay, and are different for the two metals. Along the double-pulse delay axis, three different time constants are observed, a slow one of a few tens of picoseconds, a fast one of a few picoseconds, and an oscillation pattern. Results are discussed based on the mechanisms of plasma shielding, electron-phonon coupling, strong coupling of laser with liquid phase, oxidation of aluminum, laser induced temperature and pressure oscillations, and the atomization of plume particles.

  8. Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers (Prop 2003-054)

    SciTech Connect

    Speakman, Scott A; Gu, Z; Edgar, J H; Blom, Douglas Allen; Perrin, J; Chaudhuri, J

    2006-10-01

    Two types of aluminum nitride (AlN) samples were oxidized in flowing oxygen between 900 C and 1150 C for up to 6 h - highly (0001) textured polycrystalline AlN wafers and low defect density AlN single crystals. The N-face consistently oxidized at a faster rate than the Al-face. At 900 C and 1000 C after 6 h, the oxide was 15% thicker on the N-face than on the Al-face of polycrystalline AlN. At 1100 C and 1150 C, the oxide was only 5% thicker on the N-face, as the rate-limiting step changed from kinetically-controlled to diffusion-controlled with the oxide thickness. A linear parabolic model was established for the thermal oxidation of polycrystalline AlN on both the Al- and N-face. Transmission electron microscopy (TEM) confirmed the formation of a thicker crystalline oxide film on the N-face than on the Al-face, and established the crystallographic relationship between the oxide film and substrate. The oxidation of high-quality AlN single crystals resulted in a more uniform colored oxide layer compared to polycrystalline AlN. The aluminum oxide layer was crystalline with a rough AlN/oxide interface. The orientation relationship between AlN and Al{sub 2}O{sub 3} was (0001) AlN//(10{bar 1}0) Al{sub 2}O{sub 3} and (1{bar 1}00) AlN//(01{bar 1}2) Al{sub 2}O{sub 3}.

  9. Laser synthesis of ultradisperse powders of aluminum oxide

    SciTech Connect

    Antsiferov, V.N.; Shmakov, A.M.; Khalturin, V.G.

    1995-07-01

    We have studied laser synthesis and the structure and properties of ultradisperse aluminum oxide powders. We show that the laser radiation intensity affects the phase composition. We find that the following conditions are optimal for production of these powders: power 500 W, pressure 0.1 atm (1-10 kPa), helium as the synthesis atmosphere.

  10. Low-pressure and atmospheric pressure plasma polymerized silica-like films as primers for adhesive bonding of aluminum

    NASA Astrophysics Data System (ADS)

    Gupta, Munish

    2007-12-01

    Plasma processes, including plasma etching and plasma polymerization, were investigated for the pretreatment of aluminum prior to structural adhesive bonding. Since native oxides of aluminum are unstable in the presence of moisture at elevated temperature, surface engineering processes must usually be applied to aluminum prior to adhesive bonding to produce oxides that are stable. Plasma processes are attractive for surface engineering since they take place in the gas phase and do not produce effluents that are difficult to dispose off. Reactive species that are generated in plasmas have relatively short lifetimes and form inert products. The objective of this work was to develop plasma etching and plasma polymerization as environmentally compatible processes for surface engineering of aluminum. Plasma polymerized silica-like films of thickness less than 200 nm were deposited on pretreated aluminum substrates using hexamethyldisiloxane (HMDSO) as the "monomer" and oxygen as a "co-reactant" in low-pressure RF-powered (13.6 MHz) reactor. Recently, plasma deposition at atmospheric pressure has become a promising technology because they do not require vacuum systems, can be applied to large objects with complex shapes, and adapted easily for continuous processing. Therefore, atmospheric pressure plasma processes were investigated and compared with their more traditional counterparts, low-pressure plasmas. Molecular structure and morphology of the plasma polymerized films were determined using surface analysis techniques such as X-ray photoelectron spectroscopy (XPS), fourier-transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The effectiveness of plasma etching and plasma polymerization as surface engineering processes for aluminum were probed by determining the initial strength and durability of aluminum/epoxy lap joints prepared from substrates that were plasma pretreated, coated with silica-like film, and

  11. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  12. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  13. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  14. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  15. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  16. Reduction of Oxidative Melt Loss of Aluminum and Its Alloys

    SciTech Connect

    Dr. Subodh K. Das; Shridas Ningileri

    2006-03-17

    This project led to an improved understanding of the mechanisms of dross formation. The microstructural evolution in industrial dross samples was determined. Results suggested that dross that forms in layers with structure and composition determined by the local magnesium concentration alone. This finding is supported by fundamental studies of molten metal surfaces. X-ray photoelectron spectroscopy data revealed that only magnesium segregates to the molten aluminum alloy surface and reacts to form a growing oxide layer. X-ray diffraction techniques that were using to investigate an oxidizing molten aluminum alloy surface confirmed for the first time that magnesium oxide is the initial crystalline phase that forms during metal oxidation. The analytical techniques developed in this project are now available to investigate other molten metal surfaces. Based on the improved understanding of dross initiation, formation and growth, technology was developed to minimize melt loss. The concept is based on covering the molten metal surface with a reusable physical barrier. Tests in a laboratory-scale reverberatory furnace confirmed the results of bench-scale tests. The main highlights of the work done include: A clear understanding of the kinetics of dross formation and the effect of different alloying elements on dross formation was obtained. It was determined that the dross evolves in similar ways regardless of the aluminum alloy being melted and the results showed that amorphous aluminum nitride forms first, followed by amorphous magnesium oxide and crystalline magnesium oxide in all alloys that contain magnesium. Evaluation of the molten aluminum alloy surface during melting and holding indicated that magnesium oxide is the first crystalline phase to form during oxidation of a clean aluminum alloy surface. Based on dross evaluation and melt tests it became clear that the major contributing factor to aluminum alloy dross was in the alloys with Mg content. Mg was

  17. Spotting 2D atomic layers on aluminum nitride thin films.

    PubMed

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  18. Process for fabrication of metal oxide films

    SciTech Connect

    Tracy, C.E.; Benson, D.; Svensson, S.

    1990-07-17

    This invention is comprised of a method of fabricating metal oxide films from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of metal oxides, e.g. electro-optically active transition metal oxides, at a high deposition rate. The presence of hydrogen during the plasma reaction enhances the deposition rate of the metal oxide. Various types of metal oxide films can be produced.

  19. Formation of Nanoporous Anodic Alumina by Anodization of Aluminum Films on Glass Substrates.

    PubMed

    Lebyedyeva, Tetyana; Kryvyi, Serhii; Lytvyn, Petro; Skoryk, Mykola; Shpylovyy, Pavlo

    2016-12-01

    Our research was aimed at the study of aluminum films and porous anodic alumina (PAA) films in thin-film РАА/Al structures for optical sensors, based on metal-clad waveguides (MCWG). The results of the scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies of the structure of Al films, deposited by DC magnetron sputtering, and of PAA films, formed on them, are presented in this work.The study showed that the structure of the Al films is defined by the deposition rate of aluminum and the thickness of the film. We saw that under anodization in 0.3 M aqueous oxalic acid solution at a voltage of 40 V, the PAA film with a disordered array of pores was formed on aluminum films 200-600 nm thick, which were deposited on glass substrates with an ultra-thin adhesive Nb layer. The research revealed the formation of two differently sized types of pores. The first type of pores is formed on the grain boundaries of aluminum film, and the pores are directed perpendicularly to the surface of aluminum. The second type of pores is formed directly on the grains of aluminum. They are directed perpendicularly to the grain plains. There is a clear tendency to self-ordering in this type of pores. PMID:27083584

  20. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM SUBSTRATES. PART I: CHARACTERIZATION OF FILMS AND FILM/SUBSTRATE INTERFACES

    EPA Science Inventory

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 Å in thickness) were deposited onto aluminum substrates (6111-T4 alloy) in radio frequency (RF) and microwave (MW) powered reactors to be used as primers for structural adhesive bonding. Processing variables such as sub...

  1. An XPS study of the stability of Fomblin Z25 on the native oxide of aluminum. [x ray photoelectron spectroscopy

    NASA Technical Reports Server (NTRS)

    Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

    1991-01-01

    Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum and sapphire surfaces, and their behavior at different temperatures was studied using x ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that the interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. Our conclusion is that the native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At high temperatures (150 C) degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formulation of a debris layer.

  2. X-ray photoelectron spectroscopy study of the stability of Fomblin Z25 on the native oxide of aluminum

    NASA Technical Reports Server (NTRS)

    Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

    1992-01-01

    Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum, and onto sapphire surfaces, and their behavior at different temperatures was studied using X-ray photoelectron spectroscopy and temperature desorption spectroscopy (TDS). The interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on the clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. The native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At higher temperatures (150 C), degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formation of a debris layer.

  3. Shuttle redesigned solid rocket motor aluminum oxide investigations

    NASA Astrophysics Data System (ADS)

    Blomshield, Fred S.; Kraeutle, Karl J.; Stalnaker, Richard A.

    1994-10-01

    During the launch of STS-54, a 15 psi pressure blip was observed in the ballistic pressure trace of one of the two Space Shuttle Redesigned Solid Rocket Motors (RSRM). One possible scenario for the observed pressure increase deals with aluminum oxide slag formation in the RSRM. The purpose of this investigation was to examine changes which may have occurred in the aluminum oxide formation in shuttle solid propellant due to changes in the ammonium perchlorate. Aluminum oxide formation from three propellants, all having the same formulation, but containing ammonium perchlorate from different manufacturers, will be compared. Three methods have been used to look for possible differences among the propellants. The first method was to examine window bomb movies of the propellants burning at 100, 300 and 600 psia. The motor operating pressure during the pressure blip was around 600 psia. The second method used small samples of propellant which were fired in a combustion bomb which quenched the burning aluminum particles soon after they left the propellant surface. The bomb was fired in both argon and Nitrogen atmospheres at various pressures. Products from this device were examined by optical microscopy. The third method used larger propellant samples fired into a particle collection device which allowed the aluminum to react and combust more completely. This device was pressurized with Nitrogen to motor operating pressures. The collected products were subdivided into size fractions by screening and sedimentation and analyzed optically with an optical microscope. The results from all three methods indicate very small changes in the size distribution of combustion products.

  4. Shuttle Redesigned Solid Rocket Motor aluminum oxide investigations

    NASA Astrophysics Data System (ADS)

    Blomshield, Fred S.; Kraeutle, Karl J.; Stalnaker, Richard A.

    1994-10-01

    During the launch of STS-54, a 15 psi pressure blip was observed in the ballistic pressure trace of one of the two Space Shuttle Redesigned Solid Rocket Motors (RSRM). One possible scenario for the observed pressure increase deals with aluminum oxide slag formation in the RSRM. The purpose of this investigation was to examine changes which may have occurred in the aluminum oxide formation in shuttle solid propellant due to changes in the ammonium perchlorate. Aluminum oxide formation from three propellants, all having the same formulation, but containing ammonium perchlorate from different manufacturers, will be compared. Three methods have been used to look for possible differences among the propellants. The first method was to examine window bomb movies of the propellants burning at 100, 300 and 600 psia. The motor operating pressure during the pressure blip was around 600 psia. The second method used small samples of propellant which were fired in a combustion bomb which quenched the burning aluminum particles soon after they left the propellant surface. The bomb was fired in both argon and Nitrogen atmospheres at various pressures. Products from this device were examined by optical microscopy. The third method used larger propellant samples fired into a particle collection device which allowed the aluminum to react and combust more completely. This device was pressurized with Nitrogen to motor operating pressures. The collected products were subdivided into size fractions by screening and sedimentation and analyzed optically with an optical microscope. the results from all three methods indicate very small changes in the size distribution of combustion products.

  5. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    NASA Astrophysics Data System (ADS)

    Huang, Ying; Sarkar, D. K.; Chen, X.-Grant

    2015-02-01

    Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  6. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

    PubMed

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

    2013-01-18

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.

  7. Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

    SciTech Connect

    Mibus, M.; Zangari, G.; Jensen, C.; Hu, X.; Reed, M. L.; Knospe, C.

    2014-06-16

    The electronic and ionic transports in 32–56 nm thick anodic aluminum oxide films are investigated before and after a 1-h anneal at 200–400 °C in argon. Results are correlated to their defect density as measured by the Mott-Schottky technique. Solid state measurements show that electronic conduction upon annealing is hindered by an increase in the Schottky emission barrier, induced by a reduction in dopant density. Using an electrochemical contact, the films fail rapidly under cathodic polarization, unless defect density is decreased down to 10{sup 17} cm{sup −3}, resulting in a three order of magnitude reduction in current and no visible gas evolution. Under anodic polarization, the decrease in defect density delays the onset of ionic conduction as well as further oxide growth and failure.

  8. Oxide mediated spectral shifting in aluminum resonant optical antennas.

    PubMed

    Schwab, Patrick M; Moosmann, Carola; Dopf, Katja; Eisler, Hans-Jürgen

    2015-10-01

    As a key feature among metals showing good plasmonic behavior, aluminum extends the spectrum of achievable plasmon resonances of optical antennas into the deep ultraviolet. Due to degradation, a native oxide layer gives rise to a metal-core/oxide-shell nanoparticle and influences the spectral resonance peak position. In this work, we examine the role of the underlying processes by applying numerical nanoantenna models that are experimentally not feasible. Finite-difference time-domain simulations are carried out for a large variety of elongated single-arm and two-arm gap nanoantennas. In a detailed analysis, which takes into account the varying surface-to-volume ratio, we show that the overall spectral shift toward longer wavelengths is mainly driven by the higher index surrounding material rather than by the decrease of the initial aluminum volume. In addition, we demonstrate experimentally that this shifting can be minimized by an all-inert fabrication and subsequent proof-of-concept encapsulation.

  9. Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films

    NASA Astrophysics Data System (ADS)

    Akiyama, Morito; Morofuji, Yukari; Kamohara, Toshihiro; Nishikubo, Keiko; Tsubai, Masayoshi; Fukuda, Osamu; Ueno, Naohiro

    2006-12-01

    We have investigated the high sensitive piezoelectric response of c-axis oriented aluminum nitride (AlN) thin films prepared on polyethylene terephthalate (PET) films. The AlN films were deposited using a radio frequency magnetron sputtering method at temperatures close to room temperature. The c axes of the AlN films were perpendicularly oriented to the PET film surfaces. The sensor consisting of the AlN and PET films is flexible like PET films and the electrical charge is linearly proportional to the stress within a wide range from 0to8.5MPa. The sensor can respond to the frequencies from 0.3 to over 100Hz and measures a clear human pulse wave form by holding the sensor between thumb and middle finger. The resolution of the pulse wave form is comparable to a sphygmomanometer at stress levels of 10kPa. We think that the origin of the high performance of the sensor is the deflection effect, the thin thickness and high elastic modulus of the AlN layer, and the thin thickness and low elastic modulus of the PET film.

  10. Thermal Characteristics of an Aluminum Thin Film due to Temperature Disturbance at Film Edges

    NASA Astrophysics Data System (ADS)

    Ali, Haider; Mansoor, Saad Bin; Yilbas, Bekir Sami

    2015-01-01

    Phonon transport in an aluminum thin film is simulated due to a temperature disturbance across the film. The Boltzmann equation is introduced to formulate the radiative transport in the electron and lattice sub-systems. The transient and frequency dependence of the phonon transport is considered, and dispersion relations are accommodated to account for the group velocities in the analysis. Electron-phonon coupling is employed to couple the energy transport across the electron and lattice sub-systems. An equivalent equilibrium temperature is presented to assess the characteristics of the phonon intensity in the film. Temperature predictions are validated with data presented in a previous study. It is found that the equivalent equilibrium temperature differs significantly from that obtained from the two-equation model. The film thickness influences the transport characteristics of the film, in which case the time to reach an almost quasi-steady temperature is shorter for the thin film (, where is the film thickness) than that corresponding to the thick film (). In the diffusion limit (when the Knudsen number , where is the mean free path), it is demonstrated that the radiative transport equation reduces to the formulation of the two-equation model.

  11. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    SciTech Connect

    Wing, Waylin J.; Sadeghi, Seyed M. Gutha, Rithvik R.; Campbell, Quinn; Mao, Chuanbin

    2015-09-28

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  12. Inelastic electron scattering in amorphous silicon nitride and aluminum oxide with multiple-scattering corrections

    NASA Astrophysics Data System (ADS)

    Livins, Peteris; Aton, T.; Schnatterly, S. E.

    1988-09-01

    Electron-energy-loss measurements for an amorphous chemical-vapor-deposited silicon nitride film and evaporated sapphire in the broad energy range 1-200 eV are investigated. A method, not requiring the zero-loss peak, to remove the multiple scattering is discussed, applied, and the optical constants obtained. An Elliot-type model used with aluminum oxide gives a valence-exciton binding energy of 1.36+/-0.2 eV with a band gap of 9.8+/-0.2 eV. The unexpected strength of the nitrogen 2s transition is noted in silicon nitride.

  13. Thermal desorption spectroscopy of magnesium from a chemical vapor deposited aluminum oxide surface

    NASA Astrophysics Data System (ADS)

    Zhou, Z. Q.; Burns, Richard P.

    1993-12-01

    The binding of vapor deposited magnesium atoms to amorphous aluminum oxide was investigated by thermal desorption spectroscopy (TDS) combined with mass spectrometric detection of the desorbed species and Auger electron spectrometric examination of the oxide surface, as well as by sticking probability measurements. The TDS studies of magnesium desorption from the aluminum oxide film showed that at coverages ⪯7×10 13 cm -2, one first-order TDS peak was observed with Tm=489 K. An activation energy for desorption ( Ed) of 163 kJ mol -1 was determined for this process at low coverages. A crystal equivalent bond enthalpy model was used to calculate HL, the bond enthalpy value for an adsorbed metal-surface oxygen bond. For Mg on alumina(am) the calculated value 2 HL=166.2 kJ mol -1 agrees with the experimental value and indicates that two magnesium-oxygen bonds are broken in the desorption process ( Ed=2 HL). In a separate experiment Mg was deposited on an alumina film and then exposed to O 2(g). TDS indicated that oxygen exposure results in increased thermal stability of adsorbed Mg.

  14. Tailoring oxidation of aluminum nanoparticles reinforced with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Sharma, Manjula; Sharma, Vimal

    2016-05-01

    In this report, the oxidation temperature and reaction enthalpy of Aluminum (Al) nanoparticles has been controlled by reinforcing with carbon nanotubes. The physical mixing method with ultrasonication was employed to synthesize CNT/Al nanocomposite powders. The micro-morphology of nanoconmposite powders has been analysed by scanning electron microscopy, energy dispersive spectroscopy, raman spectroscopy and X-ray diffraction techniques. The oxidation behavior of nanocomposite powders analyzed by thermogravimetry/differential scanning calorimertry showed improvement in the exothermic enthalpy. Largest exothermic enthalpy of-1251J/g was observed for CNT (4 wt%)/Al nanocomposite.

  15. Controlled growth of superhydrophobic films by sol-gel method on aluminum substrate

    NASA Astrophysics Data System (ADS)

    Lu, Shixiang; Chen, Yiling; Xu, Wenguo; Liu, Wei

    2010-08-01

    Superhydrophobic surface was prepared by sol-gel method on aluminum substrate via immersing the clean pure aluminum substrate into the solution of zinc nitrate hexahydrate (Zn(NO 3) 2·6H 2O) and hexamethylenetetraamine (C 6H 12N 4) at different molar ratios and unchanged 0.04 mol/L total concentration, then heated at 95 °C in water bath for 1.5 h, subsequently modified with 18 alkanethiols or stearic acid. When the molar ratios of Zn(NO 3) 2·6H 2O and C 6H 12N 4 were changed from 10:1 to 1:1 the contact angle was higher than 150°. The best prepared surface had a high water contact angle of about 154.8°, as well as low angle hysteresis of about 3°. The surface of prepared films using Zn(NO 3) 2·6H 2O and C 6H 12N 4 composed of ZnO and Zn-Al LDH, and Al. SEM images of the film showed that the resulting surface exhibits different flower-shaped wurtzite zinc oxide microstructure and porous Zn-Al LDH. The special flowerlike and porous architecture, along with the low surface energy leads to the surface superhydrophobicity.

  16. A preliminary study of ester oxidation on an aluminum surface using chemiluminescence

    NASA Technical Reports Server (NTRS)

    Jones, W. R., Jr.; Meador, M. A.; Morales, W.

    1986-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin-film micro-oxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing 10 to the minus 3 power M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission (I sub max) was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period or the time to reach one-half of maximum intensity (t sub 1/2) was an inverse function of test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  17. A preliminary study of ester oxidation on an aluminum surface using chemiluminescence

    NASA Technical Reports Server (NTRS)

    Jones, William R., Jr.; Meador, Michael A.; Morales, Wilfredo

    1987-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin-film micro-oxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing 10 to the minus 3rd power M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission (I sub max) was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period or the time to reach one-half of maximum intensity (t sub 1/2) was an inverse function of test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  18. A nine-atom rhodium–aluminum oxide cluster oxidizes five carbon monoxide molecules

    PubMed Central

    Li, Xiao-Na; Zhang, Hua-Min; Yuan, Zhen; He, Sheng-Gui

    2016-01-01

    Noble metals can promote the direct participation of lattice oxygen of very stable oxide materials such as aluminum oxide, to oxidize reactant molecules, while the fundamental mechanism of noble metal catalysis is elusive. Here we report that a single atom of rhodium, a powerful noble metal catalyst, can promote the transfer of five oxygen atoms to oxidize carbon monoxide from a nine-atom rhodium–aluminum oxide cluster. This is a sharp improvement in the field of cluster science where the transfer of at most two oxygen atoms from a doped cluster is more commonly observed. Rhodium functions not only as the preferred trapping site to anchor and oxidize carbon monoxide by the oxygen atoms in direct connection with rhodium but also the primarily oxidative centre to accumulate the large amounts of electrons and the polarity of rhodium is ultimately transformed from positive to negative. PMID:27094921

  19. Prediction of new thermodynamically stable aluminum oxides

    PubMed Central

    Liu, Yue; Oganov, Artem R.; Wang, Shengnan; Zhu, Qiang; Dong, Xiao; Kresse, Georg

    2015-01-01

    Recently, it has been shown that under pressure, unexpected and counterintuitive chemical compounds become stable. Laser shock experiments (A. Rode, unpublished) on alumina (Al2O3) have shown non-equilibrium decomposition of alumina with the formation of free Al and a mysterious transparent phase. Inspired by these observations, we have explored the possibility of the formation of new chemical compounds in the system Al-O. Using the variable-composition structure prediction algorithm USPEX, in addition to the well-known Al2O3, we have found two extraordinary compounds Al4O7 and AlO2 to be thermodynamically stable in the pressure ranges 330-443 GPa and above 332 GPa, respectively. Both of these compounds at the same time contain oxide O2− and peroxide O22− ions, and both are insulating. Peroxo-groups are responsible for gap states, which significantly reduce the electronic band gap of both Al4O7 and AlO2. PMID:25830780

  20. The effect of magnesium oxide supplementation to aluminum oxide slip on the jointing of aluminum oxide bars.

    PubMed

    Odatsu, Tetsurou; Sawase, Takashi; Kamada, Kohji; Taira, Yohsuke; Shiraishi, Takanobu; Atsuta, Mitsuru

    2008-03-01

    The purpose of this study was to investigate the effect of modifying aluminum oxide slips with magnesium oxide (MgO) to create a jointing material for In-Ceram Alumina. Jointed In-Ceram Alumina bars with In-Ceram Alumina slips containing 0-1.0 mass% MgO were examined by a three-point bending test. Joint-free bars were also tested as controls. Fracture surfaces were evaluated by scanning electron microscopy. In addition, linear shrinkage and fracture toughness were assessed. The 0.3 mass% MgO group showed the highest flexural strength among the jointed groups, and there were no statistical differences between the joint-free control groups. The fracture surface of 0.3 mass% MgO group showed increased sintering densification with reduced micropore size. No linear shrinkage was observed with the addition of MgO to the alumina slip. Added MgO was also effective in boosting fracture toughness. The present findings indicate that the MgO-supplemented binding material is useful for clinical applications.

  1. Nanopore gradients on porous aluminum oxide generated by nonuniform anodization of aluminum.

    PubMed

    Kant, Krishna; Low, Suet P; Marshal, Asif; Shapter, Joseph G; Losic, Dusan

    2010-12-01

    A method for surface engineering of structural gradients with nanopore topography using the self-ordering process based on electrochemical anodization of aluminum is described. A distinct anodization condition with an asymmetrically distributed electric field at the electrolyte/aluminum interface is created by nonparallel arrangement between electrodes (tilted by 45°) in an electrochemical cell. The anodic aluminum oxide (AAO) porous surfaces with ordered nanopore structures with gradual and continuous change of pore diameters from 80 to 300 nm across an area of 0.5-1 cm were fabricated by this anodization using two common electrolytes, oxalic acid (0.3 M) and phosphoric acid (0.3 M). The formation of pore gradients of AAO is explained by asymmetric and gradual distribution of the current density and temperature variation generated on the surface of Al during the anodization process. Optical and wetting gradients of prepared pore structures were confirmed by reflective interferometric spectroscopy and contact angle measurements showing the ability of this method to generate porous surfaces with multifunctional gradients (structural, optical, wetting). The study of influence of pore structures on cell growth using the culture of neuroblastoma cells reveals biological relevance of nanopore gradients and the potential to be applied as the platform for spatially controllable cell growth and cell differentiation.

  2. Oxidation of epitaxial Ce films

    NASA Astrophysics Data System (ADS)

    Vescovo, E.; Carbone, C.

    1996-02-01

    Single-crystal Ce films of more than 300 Å thickness have been epitaxially grown on W(110). Their interaction with molecular oxygen at room temperature has been studied by angle-resolved photoemission, low-energy electron diffraction, and Auger spectroscopy. As a function of the oxygen exposure, the reaction is found to proceed through a sequence of three distinct stages: (i) ordered dissociative surface adsorption; (ii) formation of an ordered Ce2O3-like surface oxide; and (iii) gradual conversion of the sesquioxide into a disordered surface dioxide CeO2-x. A structurally different Ce2O3 oxide is obtained after high oxygen exposures followed by heating at 450 K. The formation of the epitaxial surface sesquioxides is favored by the good lattice match with the Ce substrate. The same type of structural relation might lead to the formation of ordered sesquioxides on other rare-earth surfaces exposing hexagonal planes.

  3. Deposition and characterization of aluminum magnesium boride thin film coatings

    NASA Astrophysics Data System (ADS)

    Tian, Yun

    Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (< 3 x 10-6 Torr), accompanied by strong texture formation. Low vacuum level-as deposited AlMgB14 films have low hardness (10 GPa), but high vacuum level-as deposited AlMgB14 films exhibit an extremely high hardness (45 GPa - 51 GPa), and the higher deposition temperature results in still higher hardness

  4. Fabrication of Fe-Al nanoparticles by selective oxidation of Fe-Al thin films

    NASA Astrophysics Data System (ADS)

    Jang, Pyungwoo; Shin, Seungchan; Jung, Chip-Sup; Kim, Kwang-Ho; Seomoon, Kyu

    2013-04-01

    The possibility of a new technique for fabricating nanoparticles from thin films using selective oxidation in an atmosphere mixture of water vapor and hydrogen was investigated. Fe-5wt.%Al films were RF-sputtered and annealed in the atmosphere mixture at 900°C for up to 200 min, in order to oxidize aluminum selectively. Thermodynamics simulation showed that temperatures exceeding 800°C are necessary to prevent iron from being oxidized, as confirmed by the depth profile of XPS. As the annealing time increased, the morphology of the 200-nm Fe-Al films changed from the continuous to the discontinuous type; thus, particulate Fe-Al films formed after 100 min. The particulate 10- to 100-nm Fe-Al films showed super-paramagnetic behavior after the oxidation. Thus, a new technique for fabricating nanoparticles was successfully introduced using selective oxidation.

  5. Screen Cage Ion Plating (SCIP) and scratch testing of polycrystalline aluminum oxide

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis; Sliney, Harold E.; Deadmore, Daniel L.

    1992-01-01

    A screen cage ion plating (SCIP) technique was developed to apply silver films on electrically nonconducting aluminum oxide. It is shown that SCIP has remarkable throwing power; surfaces to be coated need not be in direct line of sight with the evaporation source. Scratch tests, employing a diamond stylus with a 200 micro m radius tip, were performed on uncoated and on silver coated alumina. Subsequent surface analysis show that a significant amount of silver remains on the scratched surfaces, even in areas where high stylus load produced severe crack patterns in the ceramic. Friction coefficients were lowered during the scratch tests on the coated alumina indicating that this modification of the ion planting process should be useful for applying lubricating films of soft metals to electrical insulating materials. The very good throwing power of SCIP also strongly suggests general applicability of this process in other areas of technology, e.g., electronics, in addition to tribology.

  6. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  7. Chemical dynamics of nano-aluminum/iodine (V) oxide

    NASA Astrophysics Data System (ADS)

    Little, B. K.; Welle, E. J.; Emery, S. B.; Bogle, M. B.; Ashley, V. L.; Schrand, A. M.; Lindsay, C. M.

    2014-05-01

    This proceeding describes our preliminary efforts in studying highly reactive composites containing crystalline iodine (V) oxide and nano-aluminum (nAl) with various amounts of cyclohexanone in the form of powders. In this study we report upon the application of physiochemical techniques such as thermal gravimetric analysis (TGA), differential scanning calorimetry (DSC), powdered X-ray diffraction (PXRD), and electron microscopy for chemical characterization of powder composites. In addition dynamic measurements were conducted by recording pressure trace profiles during a combustion event. These various techniques were employed to examine these energetic materials (EMs) and associate changes to the chemical dynamics of the composite with the additive.

  8. Space Shuttle exhausted aluminum oxide - A measured particle size distribution

    NASA Technical Reports Server (NTRS)

    Cofer, W. R., III; Purgold, G. C.; Edahl, R. A.; Winstead, E. L.

    1991-01-01

    Aluminum oxide (A2O3) particles were collected from the Space Shuttle exhaust plume immediately following the launch of STS-34 on October 18, 1989. A2O3 samples were obtained at 2.4, 3.0, 3.2, and 7.4 km in altitude. The samples were analyzed using SEM to develope particle size distributions. There were no indications that the particle size distribution changed as a function of altitude. The particle number concentrations per cubic meter of air sampled for the four collections was found to fit an exponential expression.

  9. Aircraft water vapor measurements utilizing an aluminum oxide hygrometer

    NASA Technical Reports Server (NTRS)

    Hilsenrath, E.

    1973-01-01

    A hygrometer for water vapor measurements from an aircraft has been developed. An aluminum oxide hygrometer mounted in an aircraft Rosemount air temperature scoop was flown on NASA and USAF aircraft. Water vapor measurements were conducted up to 40,000 feet with penetration into the stratosphere. Good agreement was obtained with simultaneously flown remote sounders of water vapor. During transcontinental flights the hygrometer demonstrated adequate response to measure the natural variability of water vapor near the tropopause. Rapid response was demonstrated in pursuit of the jet wake of an F-104 at 35,000 feet.

  10. Aircraft water vapor measurements utilizing an aluminum oxide hygrometer

    NASA Technical Reports Server (NTRS)

    Hilsenrath, E.

    1974-01-01

    A hygrometer for water vapor measurements from an aircraft was developed. An aluminum oxide hygrometer mounted in an aircraft Rosemount air temperature scoop was flown on the NASA Convair 990 and on a USAF B-57 aircraft. Water vapor measurements from the Convair 990 were conducted up to 40,000 ft with penetration into the stratosphere. Good agreement was obtained with simultaneously flown remote sounders of water vapor. During transcontinental flights the hygrometer demonstrated adequate response to measure the natural variability of water vapor near the tropopause. Rapid response was demonstrated in pursuit of the jet wake of an F-104 at 35,000 ft.

  11. Secondary reconstruction of the mandible with an aluminum oxide prosthesis.

    PubMed

    Nagamine, T; Yakata, H; Nakajima, T

    1987-02-01

    A case is presented where secondary mandibular reconstruction with an aluminum oxide ceramic prosthesis was performed for a patient who had had an earlier hemimandibulectomy and primary bone graft for management of an ameloblastoma. Various factors that were considered in the construction of the prosthesis and problems encountered during operation are discussed. Although the prosthesis was found to be quite useful for the restoration of facial contour, the results of a long-term follow-up are needed to obtain a final evaluation of the reconstruction.

  12. Nanostructured lithium-aluminum alloy electrodes for lithium-ion batteries.

    SciTech Connect

    Hudak, Nicholas S.; Huber, Dale L.

    2010-12-01

    Electrodeposited aluminum films and template-synthesized aluminum nanorods are examined as negative electrodes for lithium-ion batteries. The lithium-aluminum alloying reaction is observed electrochemically with cyclic voltammetry and galvanostatic cycling in lithium half-cells. The electrodeposition reaction is shown to have high faradaic efficiency, and electrodeposited aluminum films reach theoretical capacity for the formation of LiAl (1 Ah/g). The performance of electrodeposited aluminum films is dependent on film thickness, with thicker films exhibiting better cycling behavior. The same trend is shown for electron-beam deposited aluminum films, suggesting that aluminum film thickness is the major determinant in electrochemical performance regardless of deposition technique. Synthesis of aluminum nanorod arrays on stainless steel substrates is demonstrated using electrodeposition into anodic aluminum oxide templates followed by template dissolution. Unlike nanostructures of other lithium-alloying materials, the electrochemical performance of these aluminum nanorod arrays is worse than that of bulk aluminum.

  13. High temperature performance of sputter-deposited piezoelectric aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Gillinger, M.; Schneider, M.; Bittner, A.; Nicolay, P.; Schmid, U.

    2015-05-01

    Aluminum nitride (AlN) is a promising material for sensor applications in harsh environments such as turbine exhausts or thermal power plants due to its piezoelectric properties, good thermal match to silicon and high temperature stability. Typically, the usage of piezoelectric materials in high temperature is limited by the Curie-temperature, the increase of the leakage current as well as by enhanced diffusion effects in the materials. In order to exploit the high temperature potential of AlN thin films, post deposition annealing experiments up to 1000°C in both oxygen and nitrogen gas atmospheres for 2 h were performed. X-ray diffraction measurements indicate that the thin films are chemically stable in a pure oxygen atmosphere for 2 h at annealing temperatures of up to 900°C. After a 2 h annealing step at 1000°C in pure oxygen. However, a 100 nm thin AlN film is completely oxidized. In contrast, the layer is stable up to 1000°C in pure nitrogen atmosphere. The surface topology changes significantly at annealing temperatures above 800°C independent of annealing atmosphere. The surface roughness is increased by about one order of magnitude compared to the "as deposited" state. This is predominantly attributed to recrystallization processes occurring during high temperature loading. Up to an annealing temperature of 700°C, a Poole-Frenkel conduction mechanism dominates the leakage current characteristics. Above, a mixture of different leakage current mechanisms is observed.

  14. Optical properties and residual stress in aluminum nitride films prepared by alternating-current dual reactive magnetron sputtering.

    PubMed

    Tang, Chien-Jen; Jaing, Cheng-Chung; Lee, Kun-Hsien; Lee, Cheng-Chung

    2011-05-01

    Aluminum nitride films were deposited by alternating-current dual reactive magnetron sputtering. The influence of different nitrogen flow and working pressures at a sputtering power of 5 kW on the refractive index, extinction coefficient, crystalline structure, residual stress, and surface roughness of aluminum nitride films was discussed. The aluminum nitride film would have high refractive index, low extinction coefficient and small residual stress at suitable nitrogen flow rate and low working pressure.

  15. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    SciTech Connect

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U.; Nicolay, P.

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  16. Interfacial charging phenomena of aluminum (hydr)oxides

    SciTech Connect

    Hiemstra, T.; Yong, H.; Van Riemsdijk, W.H.

    1999-08-31

    The interfacial charging of Al(OH){sub 3} (gibbsite and bayerite) and Al{sub 2}O{sub 3} has been studied. For Al(OH){sub 3} it can be shown that the very strong variation in charging behavior for different preparations is related to the relative presence of differently reacting crystal planes. The edge faces of the hexagonal gibbsite crystals are proton reactive over the whole pH range, in contrast to the 001 plane, which is mainly uncharged below pH = 10. On this 001 face only doubly coordinated surface groups are found, in contrast to the edges which also have singly coordinated surface groups. The results are fully in agreement with the predictions of the Multi site complexation (MUSIC) model. The proton adsorption, electrolyte ion adsorption, and shift of the IEP of gibbsite and aluminum oxide have been modeled simultaneously. For gibbsite, the ion pair formation of Na is larger than that of Cl, as is evidenced by modeling the experimentally observed upward shift on the IEP and charge reversal at high electrolyte concentrations. All these experimental results can be satisfactorily modeled with the MUSIC model, including the experimental surface potential of aluminum oxide (ISFET).

  17. Generation of Chloride Active Defects at the Aluminum Oxide Surface for the Study of Localized Corrosion Initiation

    SciTech Connect

    Barbour, J.C.; Missert, N.; Son, K.-A; Wall, F.D.; Zavadil, K.R.

    1998-12-07

    The generation of surface defects on electron cyclotron resonance (ECR) plasma derived aluminum oxide films has been studied. We find that Cl active O vacancies can be generated using electron and ion irradiation yielding surface concentrations of 3 xl 013 to 1X1014 sites"cm-2. These values correspond to surface defect concentrations of 3 to 10% when compared to ordered, crystalline u-alumina. The vacancies appear to be responsible for increased surface O concentrations when immersed in water. Anodic polarization of irradiated films yields a decrease in the stable pitting potential which correlates with electron dose.

  18. Aluminum-transition metal thin-film reactions

    SciTech Connect

    Colgan, E.G.

    1987-01-01

    The thin-film interactions of Al with refractory metals (Ti, V, Ta, Cr, Mo, W and Co) and near-noble metals (Ni, Pd and Pt) were investigated. The initial aluminide phases to form are the Al-rich phases: TiAl/sub 3/, VAl/sub 3/, TaAl/sub 3/, Cr/sub 2/Al/sub 13/, MoAl/sub 12/, WAl/sub 12/, Co/sub 2/Al/sub 9/, NiAl/sub 3/, Pd/sub 2/Al/sub 3/, and Pt/sub 2/Al/sub 3/ at temperatures between 225 and 525/sup 0/C. With the exceptions of VAl/sub 3/, Pd/sub 2/Al/sub 3/, and Pt/sub 2/Al/sub 3/, these are the most Al-rich phases on the phase diagrams. The subsequent phase formation and decomposition was examined in the Ni-, Pt- and Pd-Al systems. After initial-phase formation consumed the Al or metal,subsequent phases formed in accordance with the overall stoichiometry. The phase sequence resulted from the combined effects of the kinetics,thermodynamic, and nucleation. A marker sample configuration was developed where the marker is interposed between aluminide layers which minimized interface drag and barrier problems. Aluminum was the dominant diffusion species during the formation of the Al-rich phases. Coevaporation was used to try and eliminate the nucleation barriers for the Al-rich V, Pd, and Pt end phases. The initial phases were still Val/sub 3/, Pd/sub 2/Al/sub 3/, and Pt/sub 2/Al/sub 3/ which have less-complicated structures than the more Al-rich end phases.

  19. Effect of grain size on the melting point of confined thin aluminum films

    SciTech Connect

    Wejrzanowski, Tomasz; Lewandowska, Malgorzata; Sikorski, Krzysztof; Kurzydlowski, Krzysztof J.

    2014-10-28

    The melting of aluminum thin film was studied by a molecular dynamics (MD) simulation technique. The effect of the grain size and type of confinement was investigated for aluminum film with a constant thickness of 4 nm. The results show that coherent intercrystalline interface suppress the transition of solid aluminum into liquid, while free-surface gives melting point depression. The mechanism of melting of polycrystalline aluminum thin film was investigated. It was found that melting starts at grain boundaries and propagates to grain interiors. The melting point was calculated from the Lindemann index criterion, taking into account only atoms near to grain boundaries. This made it possible to extend melting point calculations to bigger grains, which require a long time (in the MD scale) to be fully molten. The results show that 4 nm thick film of aluminum melts at a temperature lower than the melting point of bulk aluminum (933 K) only when the grain size is reduced to 6 nm.

  20. Experimental study to validate a model of hillock{close_quote}s formation in aluminum thin films

    SciTech Connect

    Genin, F.Y.; Siekhaus, W.J.

    1996-04-01

    The growth of holes and hillocks in thin films has been reported extensively and for a multitude of film{endash}substrate systems. A recently developed model [F. Y. G{acute e}nin, J. Appl. Phys. {bold 77}, 5130 (1995)] which analyzes the formation of a ridge at a traveling grain boundary due to stress and capillarity driving forces provides a quantitative description of the growth of the hillocks. In order to test the model, the surface morphology of aluminum thin films deposited on oxidized silicon substrates and annealed at 450{degree}C in argon is investigated; the profiles of thermal hillocks are measured by atomic force microscopy. The comparison shows excellent agreement between modeled and experimental profiles. {copyright}{ital 1996 American Institute of Physics.}

  1. Phosphorous and aluminum gettering in Silicon-Film{trademark} Product II material

    SciTech Connect

    Cotter, J.E.; Barnett, A.M.; Hall, R.B.

    1995-08-01

    Gettering processes are being developed for the Silicon-Film{trademark} Product II solar cell structure. These processes have been developed specifically for films of silicon grown on dissimilar substrates with barrier layers. Gettering with both phosphorous- and aluminum-based processing sequences has resulted in enhancement of minority carrier diffusion length. Long diffusion lengths have allowed the characterization of light trapping in thin films of silicon grown on barrier-coated substrates.

  2. The effect of plasma electrolytic oxidation on the mean stress sensitivity of the fatigue life of the 6082 aluminum alloy

    NASA Astrophysics Data System (ADS)

    Winter, L.; Morgenstern, R.; Hockauf, K.; Lampke, T.

    2016-03-01

    In this work the mean stress influence on the high cycle fatigue behavior of the plasma electrolytic oxidized (PEO) 6082 aluminum alloy (AlSi1MgMn) is investigated. The present study is focused on the fatigue life time and the susceptibility of fatigue-induced cracking of the oxide coating and their dependence on the applied mean stress. Systematic work is done comparing conditions with and without PEO treatment, which have been tested using three different load ratios. For the uncoated substrate the cycles to failure show a significant dependence on the mean stress, which is typical for aluminum alloys. With increased load ratio and therefore increased mean stress, the fatigue strength decreases. The investigation confirms the well-known effect of PEO treatment on the fatigue life: The fatigue strength is significantly reduced by the PEO process, compared to the uncoated substrate. However, also the mean stress sensitivity of the fatigue performance is reduced. The fatigue limit is not influenced by an increasing mean stress for the PEO treated conditions. This effect is firstly shown in these findings and no explanation for this effect can be found in literature. Supposedly the internal compressive stresses and the micro-cracks in the oxide film have a direct influence on the crack initiation and growth from the oxide film through the interface and in the substrate. Contrary to these findings, the susceptibility of fatigue-induced cracking of the oxide coating is influenced by the load ratio. At tension-tension loading a large number of cracks, which grow partially just in the aluminum substrate, are present. With decreasing load ratio to alternating tension-compression stresses, the crack number and length increases and shattering of the oxide film is more pronounced due to the additional effective compressive part of the load cycle.

  3. Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

    PubMed Central

    Chou, Bo-Tsun; Chou, Yu-Hsun; Wu, Yen-Mo; Chung, Yi-Cheng; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

    2016-01-01

    Significant advances have been made in the development of plasmonic devices in the past decade. Plasmonic nanolasers, which display interesting properties, have come to play an important role in biomedicine, chemical sensors, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly those operating in the ultraviolet regime, are extremely sensitive to the metal and interface quality. Thus, these factors have a significant bearing on the development of ultraviolet plasmonic devices. Here, by addressing these material-related issues, we demonstrate a low-threshold, high-characteristic-temperature metal-oxide-semiconductor ZnO nanolaser that operates at room temperature. The template for the ZnO nanowires consists of a flat single-crystalline Al film grown by molecular beam epitaxy and an ultrasmooth Al2O3 spacer layer synthesized by atomic layer deposition. By effectively reducing the surface plasmon scattering and metal intrinsic absorption losses, the high-quality metal film and the sharp interfaces formed between the layers boost the device performance. This work should pave the way for the use of ultraviolet plasmonic nanolasers and related devices in a wider range of applications. PMID:26814581

  4. Single-crystalline aluminum film for ultraviolet plasmonic nanolasers.

    PubMed

    Chou, Bo-Tsun; Chou, Yu-Hsun; Wu, Yen-Mo; Chung, Yi-Cheng; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

    2016-01-01

    Significant advances have been made in the development of plasmonic devices in the past decade. Plasmonic nanolasers, which display interesting properties, have come to play an important role in biomedicine, chemical sensors, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly those operating in the ultraviolet regime, are extremely sensitive to the metal and interface quality. Thus, these factors have a significant bearing on the development of ultraviolet plasmonic devices. Here, by addressing these material-related issues, we demonstrate a low-threshold, high-characteristic-temperature metal-oxide-semiconductor ZnO nanolaser that operates at room temperature. The template for the ZnO nanowires consists of a flat single-crystalline Al film grown by molecular beam epitaxy and an ultrasmooth Al2O3 spacer layer synthesized by atomic layer deposition. By effectively reducing the surface plasmon scattering and metal intrinsic absorption losses, the high-quality metal film and the sharp interfaces formed between the layers boost the device performance. This work should pave the way for the use of ultraviolet plasmonic nanolasers and related devices in a wider range of applications. PMID:26814581

  5. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M. ); Gao, Yongli . Dept. of Physics and Astronomy)

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  6. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M.; Gao, Yongli

    1991-12-31

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  7. A method of producing high quality oxide and related films on surfaces

    NASA Technical Reports Server (NTRS)

    Ruckman, Mark W.; Strongin, Myron; Gao, Yongli

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on molecular beam epitaxy (MBE) grown GaAS(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia, or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid to form the desired compound or a precursor that can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities, and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE systems. Ongoing research using the same apparatus suggests that photon or electron irradiation could be used to promote the reactions needed to produce the intended material.

  8. Astaxanthin ameliorates aluminum chloride-induced spatial memory impairment and neuronal oxidative stress in mice.

    PubMed

    Al-Amin, Md Mamun; Reza, Hasan Mahmud; Saadi, Hasan Mahmud; Mahmud, Waich; Ibrahim, Abdirahman Adam; Alam, Musrura Mefta; Kabir, Nadia; Saifullah, A R M; Tropa, Sarjana Tarannum; Quddus, A H M Ruhul

    2016-04-15

    Aluminum chloride induces neurodegenerative disease in animal model. Evidence suggests that aluminum intake results in the activation of glial cells and generation of reactive oxygen species. By contrast, astaxanthin is an antioxidant having potential neuroprotective activity. In this study, we investigate the effect of astaxanthin on aluminum chloride-exposed behavioral brain function and neuronal oxidative stress (OS). Male Swiss albino mice (4 months old) were divided into 4 groups: (i) control (distilled water), (ii) aluminum chloride, (iii) astaxanthin+aluminum chloride, and (iv) astaxanthin. Two behavioral tests; radial arm maze and open field test were conducted, and OS markers were assayed from the brain and liver tissues following 42 days of treatment. Aluminum exposed group showed a significant reduction in spatial memory performance and anxiety-like behavior. Moreover, aluminum group exhibited a marked deterioration of oxidative markers; lipid peroxidation (MDA), nitric oxide (NO), glutathione (GSH) and advanced oxidation of protein products (AOPP) in the brain. To the contrary, co-administration of astaxanthin and aluminum has shown improved spatial memory, locomotor activity, and OS. These results indicate that astaxanthin improves aluminum-induced impaired memory performances presumably by the reduction of OS in the distinct brain regions. We suggest a future study to determine the underlying mechanism of astaxanthin in improving aluminum-exposed behavioral deficits.

  9. Electrochromism in copper oxide thin films

    SciTech Connect

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  10. CVD diamond film oxidation resistance research

    NASA Astrophysics Data System (ADS)

    Jing, Longwei; Wang, Xiaoping; Wang, Lijun; Pan, Xiufang; Sun, Yiqing; Wang, Jinye; Sun, Hongtao

    2013-12-01

    Diamond films were deposited on a silicon substrate by microwave plasma chemical vapor deposition system, and its oxidation experiments were carried out in atmospheric environmental condition by using a muffle furnace. Inatmospheric environment (the temperature is from 400°C to 900°C) the oxidation resistance of diamond thin films was investigated. The results indicate that under the atmospheric environment diamond thin film surface morphology did not change after 6 hours at 400°C. Diamond thin film surface morphology began to change after 2 hours at 600°C, and when time was extended to 4 hours, the diamond thin film surface morphology changed significantly. The surface morphology of diamond films began to change after 15 minutes at a 700°C condition and when time was extended to 6 hours diamond films were all destroyed. All the diamond films on the silicon substrate disappeared completely in 20 minutes at 900°C. The intact crystal face is the reason that natural diamond has stable chemical property. The crystal face of synthetic diamond film has a lot of defects, especially on the side. Oxidation of the diamond films begin with the grain boundary and defects.

  11. Surface composition of solid-rocket exhausted aluminum oxide particles

    NASA Technical Reports Server (NTRS)

    Cofer, Wesley R., III; Winstead, Edward L.; Key, Lawrence E.

    1989-01-01

    Particulate samples of aluminum oxide were collected on Teflon filters from the exhaust plume of the Space Shuttle (STS-61A, October 30, 1985) over the altitude interval 4.6-7.6 km immediately after launch. These particles were analyzed using SEM, energy-dispersive X-ray analysis, electron spectroscopy for chemical analysis, X-ray fluorescent spectroscopy, and conventional wet-chemical techniques. The samples were 0.6-1.0 percent surface-chlorided (chlorided meaning predominantly aluminum chlorides and oxychlorides, possibly including other adsorbed forms of chloride) by weight. This level of chloriding is about one-third of the amount determined previously from laboratory-prepared alumina and surface site samples of solid-rocket-produced alumina (SRPA) after both had been exposed to moist HCl vapor at temperatures down to ambient. This level is equivalent to previous laboratory results with samples exposed to moist HCl at temperatures above the boiling point of water. It is suggested that the present lower chloriding levels, determined for samples from a 'dry' Shuttle exhaust cloud, underscore the importance of a liquid water/hydrochloric acid phase in governing the extent of surface chloriding of SRPA. The reduced chloriding is not trivial with respect to potential physical/chemical modification of the SRPA particle surfaces and their corresponding interaction with the atmosphere.

  12. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    PubMed

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  13. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates

    NASA Astrophysics Data System (ADS)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-04-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  14. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    PubMed

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon. PMID:25883544

  15. Aluminum powder metallurgy processing

    SciTech Connect

    Flumerfelt, J.F.

    1999-02-12

    The objective of this dissertation is to explore the hypothesis that there is a strong linkage between gas atomization processing conditions, as-atomized aluminum powder characteristics, and the consolidation methodology required to make components from aluminum powder. The hypothesis was tested with pure aluminum powders produced by commercial air atomization, commercial inert gas atomization, and gas atomization reaction synthesis (GARS). A comparison of the GARS aluminum powders with the commercial aluminum powders showed the former to exhibit superior powder characteristics. The powders were compared in terms of size and shape, bulk chemistry, surface oxide chemistry and structure, and oxide film thickness. Minimum explosive concentration measurements assessed the dependence of explosibility hazard on surface area, oxide film thickness, and gas atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization oxidation of aluminum powder. An Al-Ti-Y GARS alloy exposed in ambient air at different temperatures revealed the effect of reactive alloy elements on post-atomization powder oxidation. The pure aluminum powders were consolidated by two different routes, a conventional consolidation process for fabricating aerospace components with aluminum powder and a proposed alternative. The consolidation procedures were compared by evaluating the consolidated microstructures and the corresponding mechanical properties. A low temperature solid state sintering experiment demonstrated that tap densified GARS aluminum powders can form sintering necks between contacting powder particles, unlike the total resistance to sintering of commercial air atomization aluminum powder.

  16. [Sensitometry of Mammographic Screen-film System Using Bootstrap Aluminum Step-Wedge.].

    PubMed

    Abe, Shinji; Imada, Ryou; Terauchi, Takashi; Fujisaki, Tatsuya; Monma, Masahiko; Nishimura, Katsuyuki; Saitoh, Hidetoshi; Mochizuki, Yasuo

    2005-01-01

    Recently, a few types of step-wedges for bootstrap sensitometry with a mammographic screen-film system have been proposed. In this study, the bootstrap sensitometry with the mammographic screen-film system was studied for two types of aluminum step-wedges. Characteristic X-ray energy curves were determined using mammographic and general radiographic aluminum step-wedges devised to prevent scattered X-rays generated from one step penetrating into the region of another one, and dependence of the characteristic curves on the wedges was also discussed. No difference was found in the characteristic curves due to the difference in the step-wedges for mammography and general radiography although there was a slight difference in shape at the shoulder portion for the two types of step-wedges. Therefore, it was concluded that aluminum step-wedges for mammography and general radiography could be employed in bootstrap sensitometry with the mammographic screen-film system. PMID:16479054

  17. Solid propellant exhausted aluminum oxide and hydrogen chloride - Environmental considerations

    NASA Technical Reports Server (NTRS)

    Cofer, W. R., III; Winstead, E. L.; Purgold, G. C.; Edahl, R. A.

    1993-01-01

    Measurements of gaseous hydrogen chloride (HCl) and particulate aluminum oxide (Al2O3) were made during penetrations of five Space Shuttle exhaust clouds and one static ground test firing of a shuttle booster. Instrumented aircraft were used to penetrate exhaust clouds and to measure and/or collect samples of exhaust for subsequent analyses. The focus was on the primary solid rocket motor exhaust products, HCl and Al2O3, from the Space Shuttle's solid boosters. Time-dependent behavior of HCl was determined for the exhaust clouds. Composition, morphology, surface chemistry, and particle size distributions were determined for the exhausted Al2O3. Results determined for the exhaust cloud from the static test firing were complicated by having large amounts of entrained alkaline ground debris (soil) in the lofted cloud. The entrained debris may have contributed to neutralization of in-cloud HCl.

  18. Nitric oxide signaling in aluminum stress in plants.

    PubMed

    He, Huyi; Zhan, Jie; He, Longfei; Gu, Minghua

    2012-07-01

    Nitric oxide (NO) is a ubiquitous signal molecule involved in multiple plant responses to environmental stress. In the recent years, the regulating role of NO on heavy metal toxicity in plants is realized increasingly, but knowledge of NO in alleviating aluminum (Al) toxicity is quite limited. In this article, NO homeostasis between its biosynthesis and elimination in plants is presented. Some genes involved in NO/Al network and their expressions are also introduced. Furthermore, the role of NO in Al toxicity and the functions in Al tolerance are discussed. It is proposed that Al toxicity may disrupt NO homeostasis, leading to endogenous NO concentration being lower than required for root elongation in plants. There are many evidences that pointed out that the exogenous NO treatments improve Al tolerance in plants through activating antioxidative capacity to eliminate reactive oxygen species. Most of the work with respect to NO regulating pathways and functions still has to be done in the future.

  19. Transparent nanotubular capacitors based on transplanted anodic aluminum oxide templates.

    PubMed

    Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Wu, Wenhui; Yue, Jin; Liu, Chang

    2015-03-11

    Transparent AlZnO/Al2O3/AlZnO nanocapacitor arrays have been fabricated by atomic layer deposition in anodic aluminum oxide templates transplanted on the AlZnO/glass substrates. A high capacitance density of 37 fF/μm(2) is obtained, which is nearly 5.8 times bigger than that of planar capacitors. The capacitance density almost remains the same in a broad frequency range from 1 kHz to 200 kHz. Moreover, a low leakage current density of 1.7 × 10(-7) A/cm(2) at 1 V has been achieved. The nanocapacitors exhibit an average optical transmittance of more than 80% in the visible range, and thus open the door to practical applications in transparent integrated circuits.

  20. Enhanced photocatalytic activity of electrochemically synthesized aluminum oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pathania, Deepak; Katwal, Rishu; Kaur, Harpreet

    2016-03-01

    In this study, aluminum oxide (Al2O3) nanoparticles (NPs) were synthesized via an electrochemical method. The effects of reaction parameters such as supporting electrolytes, solvent, current and electrolysis time on the shape and size of the resulting NPs were investigated. The Al2O3 NPs were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, thermogravimetric analysis/differential thermal analysis, energy-dispersive X-ray analysis, and ultraviolet-visible spectroscopy. Moreover, the Al2O3 NPs were explored for photocatalytic degradation of malachite green (MG) dye under sunlight irradiation via two processes: adsorption followed by photocatalysis; coupled adsorption and photocatalysis. The coupled process exhibited a higher photodegradation efficiency (45%) compared to adsorption followed by photocatalysis (32%). The obtained kinetic data was well fitted using a pseudo-first-order model for MG degradation.

  1. High quality oxide films on substrates

    DOEpatents

    Ruckman, M.W.; Strongin, M.; Gao, Y.L.

    1994-02-01

    A method is described for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material. 4 figures.

  2. High quality oxide films on substrates

    DOEpatents

    Ruckman, Mark W.; Strongin, Myron; Gao, Yong L.

    1994-01-01

    A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

  3. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    NASA Technical Reports Server (NTRS)

    Deluca, J. J. (Inventor)

    1979-01-01

    An element comprising sapphire, ruby or blue sapphire can be bonded to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  4. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    NASA Technical Reports Server (NTRS)

    Deluca, J. J. (Inventor)

    1975-01-01

    Bonding of an element comprising sapphire, ruby or blue sapphire to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide is discussed. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  5. Biodistribution and toxicity of spherical aluminum oxide nanoparticles.

    PubMed

    Park, Eun-Jung; Lee, Gwang-Hee; Yoon, Cheolho; Jeong, Uiseok; Kim, Younghun; Cho, Myung-Haing; Kim, Dong-Wan

    2016-03-01

    With the rapid development of the nano-industry, concerns about their potential adverse health effects have been raised. Thus, ranking accurately their toxicity and prioritizing for in vivo testing through in vitro toxicity test is needed. In this study, we used three types of synthesized aluminum oxide nanoparticles (AlONPs): γ-aluminum oxide hydroxide nanoparticles (γ-AlOHNPs), γ- and α-AlONPs. All three AlONPs were spherical, and the surface area was the greatest for γ-AlONPs, followed by the α-AlONPs and γ-AlOHNPs. In mice, γ-AlOHNPs accumulated the most 24 h after a single oral dose. Additionally, the decreased number of white blood cells (WBC), the increased ratio of neutrophils and the enhanced secretion of interleukin (IL)-8 were observed in the blood of mice dosed with γ-AlOHNPs (10 mg kg(-1)). We also compared their toxicity using four different in vitro test methods using six cell lines, which were derived from their potential target organs, BEAS-2B (lung), Chang (liver), HACAT (skin), H9C2 (heart), T98G (brain) and HEK-293 (kidney). The results showed γ-AlOHNPs induced the greatest toxicity. Moreover, separation of particles was observed in a transmission electron microscope (TEM) image of cells treated with γ-AlOHNPs, but not γ-AlONPs or α-AlONPs. In conclusion, our results suggest that the accumulation and toxicity of AlONPs are stronger in γ-AlOHNPs compared with γ-AlONPs and α-AlONPs owing their low stability within biological system, and the presence of hydroxyl group may be an important factor in determining the distribution and toxicity of spherical AlONPs. PMID:26437923

  6. Biodistribution and toxicity of spherical aluminum oxide nanoparticles.

    PubMed

    Park, Eun-Jung; Lee, Gwang-Hee; Yoon, Cheolho; Jeong, Uiseok; Kim, Younghun; Cho, Myung-Haing; Kim, Dong-Wan

    2016-03-01

    With the rapid development of the nano-industry, concerns about their potential adverse health effects have been raised. Thus, ranking accurately their toxicity and prioritizing for in vivo testing through in vitro toxicity test is needed. In this study, we used three types of synthesized aluminum oxide nanoparticles (AlONPs): γ-aluminum oxide hydroxide nanoparticles (γ-AlOHNPs), γ- and α-AlONPs. All three AlONPs were spherical, and the surface area was the greatest for γ-AlONPs, followed by the α-AlONPs and γ-AlOHNPs. In mice, γ-AlOHNPs accumulated the most 24 h after a single oral dose. Additionally, the decreased number of white blood cells (WBC), the increased ratio of neutrophils and the enhanced secretion of interleukin (IL)-8 were observed in the blood of mice dosed with γ-AlOHNPs (10 mg kg(-1)). We also compared their toxicity using four different in vitro test methods using six cell lines, which were derived from their potential target organs, BEAS-2B (lung), Chang (liver), HACAT (skin), H9C2 (heart), T98G (brain) and HEK-293 (kidney). The results showed γ-AlOHNPs induced the greatest toxicity. Moreover, separation of particles was observed in a transmission electron microscope (TEM) image of cells treated with γ-AlOHNPs, but not γ-AlONPs or α-AlONPs. In conclusion, our results suggest that the accumulation and toxicity of AlONPs are stronger in γ-AlOHNPs compared with γ-AlONPs and α-AlONPs owing their low stability within biological system, and the presence of hydroxyl group may be an important factor in determining the distribution and toxicity of spherical AlONPs.

  7. Low oxidation state aluminum-containing cluster anions: Cp∗AlnH-, n = 1-3

    NASA Astrophysics Data System (ADS)

    Zhang, Xinxing; Ganteför, Gerd; Eichhorn, Bryan; Mayo, Dennis; Sawyer, William H.; Gill, Ann F.; Kandalam, Anil K.; Schnöckel, Hansgeorg; Bowen, Kit

    2016-08-01

    Three new, low oxidation state, aluminum-containing cluster anions, Cp*AlnH-, n = 1-3, were prepared via reactions between aluminum hydride cluster anions, AlnHm-, and Cp*H ligands. These were characterized by mass spectrometry, anion photoelectron spectroscopy, and density functional theory based calculations. Agreement between the experimentally and theoretically determined vertical detachment energies and adiabatic detachment energies validated the computed geometrical structures. Reactions between aluminum hydride cluster anions and ligands provide a new avenue for discovering low oxidation state, ligated aluminum clusters.

  8. Ultralyophobic oxidized aluminum surfaces exhibiting negligible contact angle hysteresis.

    PubMed

    Hozumi, Atsushi; McCarthy, Thomas J

    2010-02-16

    Ultralyophobic oxidized aluminum surfaces exhibiting negligible contact angle hysteresis for probe liquids were prepared by chemical vapor deposition (CVD) of bis((tridecafluoro-1,1,2,2,-tetrahydrooctyl)-dimethylsiloxy)methylsilane (CF(3)(CF(2))(5)CH(2)CH(2)Si(CH(3))(2)O)(2)SiCH(3)H, (R(F)Si(Me)(2)O)(2)SiMeH). Oxidized aluminum surfaces were prepared by photooxidation/cleaning of sputter-coated aluminum on silicon wafers (Si/Al(Al(2)(O(3)))) using oxygen plasma. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) confirmed that this facile CVD method produces a monolayer with a thickness of 1.1 nm on the Si/Al(Al(2)(O(3))) surface without a discernible change in surface morphology. After monolayer deposition, the hydrophilic Si/Al(Al(2)(O(3))) surface became both hydrophobic and oleophobic and exhibited essentially no contact angle hysteresis for water and n-hexadecane (advancing/receding contact angles (theta(A)/theta(R)) = 110 degrees/109 degrees and 52 degrees/50 degrees, respectively). Droplets move very easily on this surface and roll off of slightly tilted surfaces, independently of the contact angle (which is a practical definition of ultralyophobic). A conventional fluoroalkylsilane monolayer was also prepared from 1H,1H,2H,2H-perfluorodecyltrimethoxysilane (CF(3)(CF(2))(7)CH(2)CH(2)Si(OCH(3))(3), R(F)Si(OMe)(3)) for comparison. The theta(A)/theta(R) values for water and n-hexadecane are 121 degrees/106 degrees and 76 degrees/71 degrees, respectively. The larger hysteresis values indicate the "pinning" of probe liquids, even though advancing contact angles are larger than those of the (R(F)Si(Me)(2)O)(2)SiMeH-derived monolayers. The (R(F)Si(Me)(2)O)(2)SiMeH-derived monolayers have excellent hydrolytic stability in water. We propose that the (R(F)Si(Me)(2)O)(2)SiMeH-derived monolayers are flexible and liquidlike and that drops in contact with these surfaces experience very low energy barriers between metastable states, leading to the

  9. Ultralyophobic oxidized aluminum surfaces exhibiting negligible contact angle hysteresis.

    PubMed

    Hozumi, Atsushi; McCarthy, Thomas J

    2010-02-16

    Ultralyophobic oxidized aluminum surfaces exhibiting negligible contact angle hysteresis for probe liquids were prepared by chemical vapor deposition (CVD) of bis((tridecafluoro-1,1,2,2,-tetrahydrooctyl)-dimethylsiloxy)methylsilane (CF(3)(CF(2))(5)CH(2)CH(2)Si(CH(3))(2)O)(2)SiCH(3)H, (R(F)Si(Me)(2)O)(2)SiMeH). Oxidized aluminum surfaces were prepared by photooxidation/cleaning of sputter-coated aluminum on silicon wafers (Si/Al(Al(2)(O(3)))) using oxygen plasma. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) confirmed that this facile CVD method produces a monolayer with a thickness of 1.1 nm on the Si/Al(Al(2)(O(3))) surface without a discernible change in surface morphology. After monolayer deposition, the hydrophilic Si/Al(Al(2)(O(3))) surface became both hydrophobic and oleophobic and exhibited essentially no contact angle hysteresis for water and n-hexadecane (advancing/receding contact angles (theta(A)/theta(R)) = 110 degrees/109 degrees and 52 degrees/50 degrees, respectively). Droplets move very easily on this surface and roll off of slightly tilted surfaces, independently of the contact angle (which is a practical definition of ultralyophobic). A conventional fluoroalkylsilane monolayer was also prepared from 1H,1H,2H,2H-perfluorodecyltrimethoxysilane (CF(3)(CF(2))(7)CH(2)CH(2)Si(OCH(3))(3), R(F)Si(OMe)(3)) for comparison. The theta(A)/theta(R) values for water and n-hexadecane are 121 degrees/106 degrees and 76 degrees/71 degrees, respectively. The larger hysteresis values indicate the "pinning" of probe liquids, even though advancing contact angles are larger than those of the (R(F)Si(Me)(2)O)(2)SiMeH-derived monolayers. The (R(F)Si(Me)(2)O)(2)SiMeH-derived monolayers have excellent hydrolytic stability in water. We propose that the (R(F)Si(Me)(2)O)(2)SiMeH-derived monolayers are flexible and liquidlike and that drops in contact with these surfaces experience very low energy barriers between metastable states, leading to the

  10. Single-Phase Rare-Earth Oxide/Aluminum Oxide Glasses

    NASA Technical Reports Server (NTRS)

    Weber, J. K. Richard; Abadie, John G.; Hixson, April D.; Nordine, Paul C.

    2006-01-01

    Glasses that comprise rare-earth oxides and aluminum oxide plus, optionally, lesser amounts of other oxides, have been invented. The other oxide(s) can include SiO2, B2O3, GeO2, and/or any of a variety of glass-forming oxides that have been used heretofore in making a variety of common and specialty glasses. The glasses of the invention can be manufactured in bulk single-phase forms to ensure near uniformity in optical and mechanical characteristics, as needed for such devices as optical amplifiers, lasers, and optical waveguides (including optical fibers). These glasses can also be formulated to have high indices of refraction, as needed in some of such devices.

  11. Solution Grown Antimony Doped Zinc Oxide Films

    NASA Astrophysics Data System (ADS)

    Riley, Conor T.

    Zinc oxide is an extensively studied semiconducting material due to its versatile properties applicable to many technologies such as electronics, optoelectronics, sensing and renewable energy. Although zinc oxide films have been created for device fabrication, the methods used to synthesize them are expensive and unrealistic for affordable commercial devices. In addition, zinc oxide is intrinsically n-type making the realization of stable p-type materials a great challenge for light emitting diodes, solar cells and UV lasing. In this thesis zinc oxide films are created using low cost solution methods. To accomplish this, a previously unreported surfactant, tert-butanol, is used. Several controlled experiments vary the concentration of tert-butanol, zinc and oxygen sources to demonstrate the ability of tert-butanol to create low cost films. Further, small amounts of antimony glycolate are added to the reaction solution, to create antimony doped zinc oxide films on sapphire and silicon substrates. Although hall measurements indicate that the films are n-type, a discussion of antimony activation provides a feasible path for the realization of low cost, p-type zinc oxide films.

  12. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  13. Measurement of quasiparticle transport in aluminum films using tungsten transition-edge sensors

    SciTech Connect

    Yen, J. J. Shank, B.; Cabrera, B.; Moffatt, R.; Redl, P.; Young, B. A.; Tortorici, E. C.; Brink, P. L.; Cherry, M.; Tomada, A.; Kreikebaum, J. M.

    2014-10-20

    We report on experimental studies of phonon sensors which utilize quasiparticle diffusion in thin aluminum films connected to tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a simple physical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach. These studies allow the design of phonon sensors with improved performance.

  14. Mesoscopically structured nanocrystalline metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Carretero-Genevrier, Adrian; Drisko, Glenna L.; Grosso, David; Boissiere, Cédric; Sanchez, Clement

    2014-11-01

    This review describes the main successful strategies that are used to grow mesostructured nanocrystalline metal oxide and SiO2 films via deposition of sol-gel derived solutions. In addition to the typical physicochemical forces to be considered during crystallization, mesoporous thin films are also affected by the substrate-film relationship and the mesostructure. The substrate can influence the crystallization temperature and the obtained crystallographic orientation due to the interfacial energies and the lattice mismatch. The mesostructure can influence the crystallite orientation, and affects nucleation and growth behavior due to the wall thickness and pore curvature. Three main methods are presented and discussed: templated mesoporosity followed by thermally induced crystallization, mesostructuration of already crystallized metal oxide nanobuilding units and substrate-directed crystallization with an emphasis on very recent results concerning epitaxially grown piezoelectric structured α-quartz films via crystallization of amorphous structured SiO2 thin films.

  15. Cytotoxicity of cultured macrophages exposed to antimicrobial zinc oxide (ZnO) coatings on nanoporous aluminum oxide membranes

    PubMed Central

    Petrochenko, Peter E.; Skoog, Shelby A.; Zhang, Qin; Comstock, David J.; Elam, Jeffrey W.; Goering, Peter L.; Narayan, Roger J.

    2013-01-01

    Zinc oxide (ZnO) is a widely used commercial material that is finding use in wound healing applications due to its antimicrobial properties. Our study demonstrates a novel approach for coating ZnO with precise thickness control onto 20 nm and 100 nm pore diameter anodized aluminum oxide using atomic layer deposition (ALD). ZnO was deposited throughout the nanoporous structure of the anodized aluminum oxide membranes. An 8 nm-thick coating of ZnO, previously noted to have antimicrobial properties, was cytotoxic to cultured macrophages. After 48 h, ZnO-coated 20 nm and 100 nm pore anodized aluminum oxide significantly decreased cell viability by ≈65% and 54%, respectively, compared with cells grown on uncoated anodized aluminum oxide membranes and cells grown on tissue culture plates. Pore diameter (20–200 nm) did not influence cell viability. PMID:23881040

  16. Cytotoxicity of cultured macrophages exposed to antimicrobial zinc oxide (ZnO) coatings on nanoporous aluminum oxide membranes.

    PubMed

    Petrochenko, Peter E; Skoog, Shelby A; Zhang, Qin; Comstock, David J; Elam, Jeffrey W; Goering, Peter L; Narayan, Roger J

    2013-01-01

    Zinc oxide (ZnO) is a widely used commercial material that is finding use in wound healing applications due to its antimicrobial properties. Our study demonstrates a novel approach for coating ZnO with precise thickness control onto 20 nm and 100 nm pore diameter anodized aluminum oxide using atomic layer deposition (ALD). ZnO was deposited throughout the nanoporous structure of the anodized aluminum oxide membranes. An 8 nm-thick coating of ZnO, previously noted to have antimicrobial properties, was cytotoxic to cultured macrophages. After 48 h, ZnO-coated 20 nm and 100 nm pore anodized aluminum oxide significantly decreased cell viability by ≈65% and 54%, respectively, compared with cells grown on uncoated anodized aluminum oxide membranes and cells grown on tissue culture plates. Pore diameter (20-200 nm) did not influence cell viability.

  17. Cytotoxicity of cultured macrophages exposed to antimicrobial zinc oxide (ZnO) coatings on nanoporous aluminum oxide membranes.

    PubMed

    Petrochenko, Peter E; Skoog, Shelby A; Zhang, Qin; Comstock, David J; Elam, Jeffrey W; Goering, Peter L; Narayan, Roger J

    2013-01-01

    Zinc oxide (ZnO) is a widely used commercial material that is finding use in wound healing applications due to its antimicrobial properties. Our study demonstrates a novel approach for coating ZnO with precise thickness control onto 20 nm and 100 nm pore diameter anodized aluminum oxide using atomic layer deposition (ALD). ZnO was deposited throughout the nanoporous structure of the anodized aluminum oxide membranes. An 8 nm-thick coating of ZnO, previously noted to have antimicrobial properties, was cytotoxic to cultured macrophages. After 48 h, ZnO-coated 20 nm and 100 nm pore anodized aluminum oxide significantly decreased cell viability by ≈65% and 54%, respectively, compared with cells grown on uncoated anodized aluminum oxide membranes and cells grown on tissue culture plates. Pore diameter (20-200 nm) did not influence cell viability. PMID:23881040

  18. Enhanced photoelectron emission from aluminum thin film by surface plasmon resonance under deep-ultraviolet excitation

    NASA Astrophysics Data System (ADS)

    Ono, A.; Shiroshita, N.; Kikawada, M.; Inami, W.; Kawata, Y.

    2015-05-01

    We report photoelectron emission enhancement of aluminum thin films by surface plasmon excitation in the deep-ultraviolet region. Deep-ultraviolet light with a wavelength of 266 nm has enough energy to cause electron emission from aluminum and excite surface plasmons on aluminum. We applied the Kretschmann configuration to excite surface plasmons. The enhancement factor of the emission current is found to depend on the enhanced electric field intensity excited by surface plasmons. The maximum emission efficiency of photoelectrons is 2.9 nA mW-1 for an aluminum thickness of 19 nm with an alumina thickness of 4 nm. The characteristics of the dependence of the photoelectron emission efficiency on the applied bias between the anode and cathode are investigated.

  19. Microtribological Mechanisms of Tungsten and Aluminum Nitride Films

    NASA Astrophysics Data System (ADS)

    Zhao, Hongjian; Mu, Chunyan; Ye, Fuxing

    2016-04-01

    Microtribology experiments were carried out on the W1- x Al x N films, deposited by radio frequency magnetron reactive sputtering on 304 stainless steel substrates and Si(100). Film wear mechanisms were investigated from the evolution of the friction coefficient and scanning electron microscopy observations. The results show that the WAlN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases and the preferred orientation changes from (111) to (200). The film damage after sliding test is mainly attributed to the composition and microstructure of the films. The amount of debris generated by friction is linked to the crack resistance. The better tribological properties for W1- x Al x N films ( x < 0.4) are mainly determined by the higher toughness.

  20. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

    PubMed

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

  1. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

    PubMed Central

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m-2 and 0.9±0.1 C m-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported. PMID:26193701

  2. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

    PubMed

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported. PMID:26193701

  3. Oxidation of ligand-protected aluminum clusters: An ab initio molecular dynamics study

    SciTech Connect

    Alnemrat, Sufian; Hooper, Joseph P.

    2014-03-14

    We report Car-Parrinello molecular dynamics simulations of the oxidation of ligand-protected aluminum clusters that form a prototypical cluster-assembled material. These clusters contain a small aluminum core surrounded by a monolayer of organic ligand. The aromatic cyclopentadienyl ligands form a strong bond with surface Al atoms, giving rise to an organometallic cluster that crystallizes into a low-symmetry solid and is briefly stable in air before oxidizing. Our calculations of isolated aluminum/cyclopentadienyl clusters reacting with oxygen show minimal reaction between the ligand and O{sub 2} molecules at simulation temperatures of 500 and 1000 K. In all cases, the reaction pathway involves O{sub 2} diffusing through the ligand barrier, splitting into atomic oxygen upon contact with the aluminum, and forming an oxide cluster with aluminum/ligand bonds still largely intact. Loss of individual aluminum-ligand units, as expected from unimolecular decomposition calculations, is not observed except following significant oxidation. These calculations highlight the role of the ligand in providing a steric barrier against oxidizers and in maintaining the large aluminum surface area of the solid-state cluster material.

  4. Electro-deposition of superconductor oxide films

    SciTech Connect

    Bhattacharya, Raghu N.

    2001-01-01

    Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

  5. Nanoindentation Fracture Behaviors of Diamond-Like Carbon Film on Aluminum Alloy with Different Interface Toughnesses

    NASA Astrophysics Data System (ADS)

    Nose, Kenji; Sasaki, Yuto; Kamiko, Masao; Mitsuda, Yoshitaka

    2012-09-01

    Fracture behaviors of a diamond-like carbon (DLC) film on an aluminum alloy (AA2017) were analyzed by a nanoindentation test under conditions of deep and full penetrations of an indenter tip through the DLC film. The interface structure between the DLC and AA2017 was modified by using the substrate sputtering and redeposition (SSRD) method. The films deposited with a shorter (30 min) SSRD duration showed weak adhesion to the substrate and often resulted in wide delamination from the impressions. At the same time, films deposited with a longer (120 min) SSRD duration showed no such delamination. Obvious brittle fractures were detected in the load-displacement curves mainly in the film with the short SSRD duration. These results suggest that a long SSRD inhibited the delamination of the DLC film from AA2017 under local and strong stress conditions because of the improved interface toughness.

  6. Evaluation of genotoxic effects of oral exposure to aluminum oxide nanomaterials in rat bone marrow.

    PubMed

    Balasubramanyam, A; Sailaja, N; Mahboob, M; Rahman, M F; Misra, S; Hussain, Saber M; Grover, Paramjit

    2009-05-31

    Nanomaterials have novel properties and functions because of their small size. The unique nature of nanomaterials may be associated with potentially toxic effects. The aim of this study was to evaluate the in vivo genotoxicity of rats exposed with Aluminum oxide nanomaterials. Hence in the present study, the genotoxicity of Aluminum oxide nanomaterials (30 and 40 nm) and its bulk material was studied in bone marrow of female Wistar rats using chromosomal aberration and micronucleus assays. The rats were administered orally with the doses of 500, 1000 and 2000 mg/kg bw. Statistically significant genotoxicity was observed with Aluminum oxide 30 and 40 nm with micronucleus as well as chromosomal aberration assays. Significantly (p < 0.05 or p < 0.001) increased frequency of MN was observed with 1000 and 2000 mg/kg bw dose levels of Aluminum oxide 30 nm (9.4 +/- 1.87 and 15.2 +/- 2.3, respectively) and Aluminum oxide 40 nm (8.1 +/- 1.8 and 13.9 +/- 2.21, respectively) over control (2.5 +/- 0.7) at 30 h. Likewise, at 48 h sampling time a significant (p < 0.05 or p < 0.001) increase in frequency of MN was evident at 1000 and 2000 mg/kg bw dose levels of Aluminum oxide 30 nm (10.6 +/- 1.68 and 16.6 +/- 2.66, respectively) and Aluminum oxide 40 nm (9.0 +/- 1.38 and 14.7 +/- 1.68, respectively) compared to control (1.8 +/- 0.75). Significantly increased frequencies (p < 0.05 or p < 0.001) of chromosomal aberrations were observed with Aluminum oxide 30 nm (1000 and 2000 mg/kg bw) and Aluminum oxide 40 nm (2000 mg/kg bw) in comparison to control at 18 and 24 h. Further, since there is need for information on the toxicokinetics of nanomaterials, determination of these properties of the nanomaterials was carried out in different tissues, urine and feces using inductively coupled plasma mass spectrometry (ICP-MS). A significant size dependent accumulation of Aluminum oxide nanomaterials occurred in different tissues, urine and feces of rats as shown by ICP-MS data. The results

  7. Nanoporous Pirani sensor based on anodic aluminum oxide

    NASA Astrophysics Data System (ADS)

    Jeon, Gwang-Jae; Kim, Woo Young; Shim, Hyun Bin; Lee, Hee Chul

    2016-09-01

    A nanoporous Pirani sensor based on anodic aluminum oxide (AAO) is proposed, and the quantitative relationship between the performance of the sensor and the porosity of the AAO membrane is characterized with a theoretical model. The proposed Pirani sensor is composed of a metallic resistor on a suspended nanoporous membrane, which simultaneously serves as the sensing area and the supporting structure. The AAO membrane has numerous vertically-tufted nanopores, resulting in a lower measurable pressure limit due to both the increased effective sensing area and the decreased effective thermal loss through the supporting structure. Additionally, the suspended AAO membrane structure, with its outer periphery anchored to the substrate, known as a closed-type design, is demonstrated using nanopores of AAO as an etch hole without a bulk micromachining process used on the substrate. In a CMOS-compatible process, a 200 μm × 200 μm nanoporous Pirani sensor with porosity of 25% was capable of measuring the pressure from 0.1 mTorr to 760 Torr. With adjustment of the porosity of the AAO, the measurable range could be extended toward lower pressures of more than one decade compared to a non-porous membrane with an identical footprint.

  8. Molecular Scale Assessment of Methylarsenic Sorption on Aluminum Oxide

    SciTech Connect

    Shimizu, M.; Ginder-Vogel, M; Parikh, S; Sparks, D

    2010-01-01

    Methylated forms of arsenic (As), monomethylarsenate (MMA) and dimethylarsenate (DMA), have historically been used as herbicides and pesticides. Because of their large application to agriculture fields and the toxicity of MMA and DMA, the sorption of methylated As to soil constituents requires investigation. MMA and DMA sorption on amorphous aluminum oxide (AAO) was investigated using both macroscopic batch sorption kinetics and molecular scale extended X-ray absorption fine structure (EXAFS) and Fourier transform infrared (FTIR) spectroscopic techniques. Sorption isotherm studies revealed sorption maxima of 0.183, 0.145, and 0.056 mmol As/mmol Al for arsenate (As{sup V}), MMA, and DMA, respectively. In the sorption kinetics studies, 100% of added As{sup V} was sorbed within 5 min, while 78% and 15% of added MMA and DMA were sorbed, respectively. Desorption experiments, using phosphate as a desorbing agent, resulted in 30% release of absorbed As{sup V}, while 48% and 62% of absorbed MMA and DMA, respectively, were released. FTIR and EXAFS studies revealed that MMA and DMA formed mainly bidentate binuclear complexes with AAO. On the basis of these results, it is proposed that increasing methyl group substitution results in decreased As sorption and increased As desorption on AAO.

  9. Current perpendicular to plane giant magnetoresistance of multilayered nanowires electrodeposited in anodic aluminum oxide membranes

    NASA Astrophysics Data System (ADS)

    Evans, P. R.; Yi, G.; Schwarzacher, W.

    2000-01-01

    Co-Ni-Cu/Cu multilayered nanowires were prepared by electrodeposition using nanoporous aluminum oxide membranes rather than the more usual track-etched polycarbonate membranes as templates. Very large values of the current perpendicular to plane giant magnetoresistance (CPP-GMR) were recorded: 55% at room temperature and 115% at 77 K. The use of aluminum oxide membranes also made possible a study of the effects of annealing on the CPP-GMR.

  10. The development of a preliminary correlation of data on oxide growth on 6061 aluminum under ANS thermal-hydraulic conditions

    SciTech Connect

    Pawel, R.E.; Yoder, G.L.; West, C.D.; Montgomery, B.H.

    1990-06-01

    The corrosion of aluminum alloy 6061 is being studied in a special test loop facility under the range of thermal-hydraulic conditions appropriate for fuel plate operation in the Advanced Neutron Source (ANS) reactor core. Experimental measurements describing the growth of the boehmite (Al{sub 2}O{sub 3}H{sub 2}O) films on the exposed aluminum surfaces are now available for a range of coolant conditions and heat fluxes, and these results have been analyzed to demonstrate the influence of several important experimental variables. A subset of our data base particularly appropriate to the ANS conditions presently anticipated was used to develop a preliminary correlation based on an empirical oxidation model.

  11. Surface chemistry and corrosion behavior of aluminum-copper systems: Air-formed films to complex conversion coatings

    NASA Astrophysics Data System (ADS)

    Chidambaram, Devicharan

    Understanding the mechanism of corrosion inhibition by carcinogenic chromates is critical to the development of environmentally safe coatings containing benign chromate substitutes. An integrated approach to correlate the surface chemistry and corrosion behavior of a wide range of systems has been undertaken. Electrochemical behavior was studied by open circuit potential (OCP) measurements, potentiodynamic polarization, and electrochemical impedance spectroscopy (EIS). Surface chemistry was studied using variable-angle X-ray photoelectron spectroscopy (VAXPS), X-ray absorption near edge spectroscopy (XANES), secondary ion mass spectroscopy (SIMS), infrared spectroscopy and synchrotron infrared micro spectroscopy (SIRMS) and Raman spectroscopy. Using SIRMS, the ASTM recommended acetone degreasing was shown to initiate pitting of AA2024-T3 via photochemical formation of acetic acid. Due to the known tendency for photoreduction of Cr6+(3d0) following soft X-ray dosage during XPS, a novel method has been developed to prevent this reduction. This method yields, for the first time, an accurate determination of the Cr6+ content of a CCC. The pretreatment of the alloy prior to conversion coating has been shown to have significant influence on the surface intermetallic distribution, composition and corrosion resistance of the initial oxide film and subsequent conversion coating. AlconoxRTM pretreatment was found to result in a highly protective surface film that inhibits the subsequent formation of CCC. The study also shows that coupling of the alloy to platinum during the bromate pretreatment increases the corrosion resistance of the subsequently formed CCC by over an order of magnitude due to reduction in surface copper content. Adsorption of chromate ion on the passive oxide film formed on the metal surface was observed to induce fixed negative charges that inhibit chloride ingress on planar surfaces. While deprotonation of the aluminum hydroxide film by chromate was

  12. Direct deposition of highly conductive aluminum thin film on substrate by solution-dipping process.

    PubMed

    Lee, Hye Moon; Choi, Si-Young; Jung, Areum

    2013-06-12

    A solution-dipping process consisting of 2 steps, including (i) a catalytic treatment of the substrate and (ii) an immersion of the catalytically treated substrate into an aluminum precursor solution of AlH3{O(C4H9)2}, is suggested for the low-cost and simple preparation of aluminum thin film. This process can be applied to electric devices in the way of not only various film geometry including large area (□ 100 mm (W) × 100 mm (L)) or patterned structure but also the diverse substrate selectivity including rigid or flexible substrate. More interestingly, preparations of aluminum film in this study can be unprecedentedly accomplished at room temperature with the help of chemical catalyst to decompose AlH3{O(C4H9)2} into Al, 1.5H2, and O(C4H9)2. Beyond the previously reported processes, the prepared Al films via solution-dipping process are comparable or even superior to Ag, Au, and Al films prepared by other solution processes and furthermore are found to be excellent in mechanical durability against external deformation. PMID:23716504

  13. Measurements of material properties for solar cells. [aluminum film and KAPTON

    NASA Technical Reports Server (NTRS)

    Castle, J. G., Jr.

    1978-01-01

    Measurements on two candidate materials for space flight are reported. The observed optical transmittance of aluminum films vapor deposited on fused quartz showed anomalously high transmittance thru 400 A and 600 A and showed an effective skin depth of 110 A in the latter part of the 1000 A thickness. KAPTON films are shown by their optical transmission spectra to have an energy gap for electron excitation of approximately 2.5 eV, which value depends on the thickness as manufactured. The resistance of KAPTON film to ionizing radiation is described by their optical spectra and their electron spin resonance spectra.

  14. Electrodeposition of silver(II) oxide films

    SciTech Connect

    Breyfogle, B.E.; Hung, C.J.; Shumsky, M.G.; Switzer, J.A.

    1996-09-01

    AgO has been studied extensively for its use as the cathode material in zinc-silver oxide batteries. Continuous films of silver(II) oxide (AgO) have been electrodeposited directly from aqueous solutions of 50 mM silver acetate/25 mM sodium acetate onto 430 stainless steel, polycrystalline platinum, and indium-tin oxide-coated glass. Current efficiencies for the electrodeposition process ranged from 62 to 95% and were a function of the applied current density. X-ray diffraction of the electrodeposited films reveals a [010] texture when the thickness is greater than 1 {micro}m. Freshly ground films or powders exhibit only reflections consistent with the monoclinic AgO structure. Rietveld analysis confirms the ground films are single-phase AgO with a P 2{sub 1}/c space group. The films were imaged and film thickness was measured by atomic force microscopy. Thermogravimetric analysis shows that the films begin to decompose in air above 130 C, with an abrupt weight loss between 180 and 200 C. The total weight loss of 6.4 to 6.5% corresponds to thermal decomposition of AgO to Ag{sub 2}O with loss of oxygen. A direct optical bandgap of 1.1 eV was measured. The black AgO films absorb strongly in the near infrared and throughout the visible region. The four-point resistivity of the AgO films was 12 {+-} 1 {Omega} cm.

  15. Graphene oxide film as solid lubricant.

    PubMed

    Liang, Hongyu; Bu, Yongfeng; Zhang, Junyan; Cao, Zhongyue; Liang, Aimin

    2013-07-10

    As a layered material, graphene oxide (GO) film is a good candidate for improving friction and antiwear performance of silicon-based MEMS devices. Via a green electrophoretic deposition (EPD) approach, GO films with tunable thickness in nanoscale are fabricated onto silicon wafer in a water solution. The morphology, microstructure, and mechanical properties as well as the friction coefficient and wear resistance of the films were investigated. The results indicated that the friction coefficient of silicon wafer was reduced to 1/6 its value, and the wear volume was reduced to 1/24 when using GO film as solid lubricant. These distinguished tribology performances suggest that GO films are expected to be good solid lubricants for silicon-based MEMS/NEMS devices. PMID:23786494

  16. Fractal dimension analysis of aluminum oxide particle for sandblasting dental use.

    PubMed

    Oshida, Y; Munoz, C A; Winkler, M M; Hashem, A; Itoh, M

    1993-01-01

    Aluminum oxide particles are commonly used as a sandblasting media, particularly in dentistry, for multiple purposes including divesting the casting investment materials and increasing effective surface area for enhancing the mechanical retention strengths of succeedingly applied fired porcelain or luting cements. Usually fine aluminum oxide particles are recycled within the sandblasting machine. Ceramics such as aluminum oxides are brittle, therefore, some portions of recycling aluminum oxide particles might be brittle fractured. If fractured sandblasting particles are involved in the recycling media, it might result in irregularity metallic materials surface as well as the recycling sandblasting media itself be contaminated. Hence, it is necessary from both clinical and practical reasons to monitor the particle conditions in terms of size/shape and effectiveness of sandblasting, so that sandblasting dental prostheses can be fabricated in optimum and acceptable conditions. In the present study, the effect of recycling aluminum oxide particles on the surface texture of metallic materials was evaluated by Fractal Dimension Analysis (FDA). Every week the alumina powder was sampled and analyzed for weight fraction and contaminants. Surface texture of sandblasted standard samples was also characterized by FDA. Results indicate very little change in particle size, while the fractal dimension increased. Fractal dimension analysis showed that the aluminum oxide particle as a sandblasting media should be replaced after 30 or 40 min of total accumulated operation time.

  17. Investigation of contamination of thin-film aluminum filters by MMH-NTO plumes exposed to UV radiation

    NASA Astrophysics Data System (ADS)

    Gupta, Vaibhav; Wieman, Seth; Didkovsky, Leonid; Haiges, Ralf; Yao, Yuhan; Wu, Wei; Gruntman, Mike; Erwin, Dan

    2015-09-01

    Thin-film aluminum filters degrade in space with significant reduction of their Extreme Ultraviolet (EUV) transmission. This degradation was observed on the EUV Spectrophotometer (ESP) onboard the Solar Dynamics Observatory's EUV Variability Experiment and the Solar EUV Monitor (SEM) onboard the Solar and Heliospheric Observatory. One of the possible causes for deterioration of such filters over time is contamination of their surfaces from plumes coming from periodic firing of their satellite's Monomethylhydrazine (MMH) - Nitrogen Tetroxide (NTO) thrusters. When adsorbed by the filters, the contaminant molecules are exposed to solar irradiance and could lead to two possible compositions. First, they could get polymerized leading to a permanent hydrocarbon layer buildup on the filter's surface. Second, they could accelerate and increase the depth of oxidation into filter's bulk aluminum material. To study the phenomena we experimentally replicate contamination of such filters in a simulated environment by MMH-NTO plumes. We apply, Scanning Electron Microscopy and X-Ray photoelectron spectroscopy to characterize the physical and the chemical changes on these contaminated sample filter surfaces. In addition, we present our first analysis of the effects of additional protective layer coatings based on self-assembled carbon monolayers for aluminum filters. This coverage is expected to significantly decrease their susceptibility to contamination and reduce the overall degradation of filter-based EUV instruments over their mission life.

  18. On the growth of conductive aluminum doped zinc oxide on 001 strontium titanate single crystals

    NASA Astrophysics Data System (ADS)

    Trinca, L. M.; Galca, A. C.; Aldica, G.; Radu, R.; Mercioniu, I.; Pintilie, L.

    2016-02-01

    Aluminum doped zinc oxide (AZO) thin films were obtained by pulsed laser deposition on (001) SrTiO3 (STO) on a range of substrate temperatures during ablation between 300 °C and 600 °C. A hexagonal system lying on a cubic one should be difficult to be obtained in epitaxial form. The geometrical selection of the AZO growth on (001) STO is not giving a unique preferential orientation. Two orientations, c-axis (along [001]) and 110, have been observed experimentally with different ratios at different substrate temperature. Discussions are made with respect to the temperature dependence of lattice mismatch between the two cases and the cubic surface of the substrate, and to the substrate surface morphology and terminating atomic layer composition. The 110 AZO is the main phase at deposition temperature of 550 °C, while for other substrate temperatures the 001 is the preferential orientation. The conductive character of 110 AZO thin film have been inferred from both ellipsometry spectra and current-voltage measurements. Excepting the samples deposited at 300 °C, the lowest resistivity is recorded for the samples with 110 AZO as the main phase.

  19. Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matrices.

    PubMed

    Chew, H G; Zheng, F; Choi, W K; Chim, W K; Fitzgerald, E A; Foo, Y L

    2009-02-01

    Growth of germanium (Ge) nanocrystals in silicon (Si) oxide and hafnium aluminum oxide (HfAlO) is examined. In Si oxide, nanocrystals were able to form at annealing temperatures of 800 degrees C to 1000 degrees C. Nanocrystals formed at 800 degrees C were round and approximately 8 nm in diameter, at 900 degrees C they become facetted and at 1000 degrees C they become spherical again. In HfAlO, at 800 degrees C nanocrystals formed are relatively smaller (approximately 3 nm in diameter) and lower in density. While at 900 degrees C and 1000 degrees C, nanocrystals did not form due to out-diffusion of Ge. Different nanocrystal formation characteristics in the matrices are attributed to differences in their crystallization temperatures.

  20. Solution-Processed Indium Oxide Based Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Xu, Wangying

    Oxide thin-film transistors (TFTs) have attracted considerable attention over the past decade due to their high carrier mobility and excellent uniformity. However, most of these oxide TFTs are usually fabricated using costly vacuum-based techniques. Recently, the solution processes have been developed due to the possibility of low-cost and large-area fabrication. In this thesis, we have carried out a detailed and systematic study of solution-processed oxide thin films and TFTs. At first, we demonstrated a passivation method to overcome the water susceptibility of solution-processed InZnO TFTs by utilizing octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs). The unpassivated InZnO TFTs exhibited large hysteresis in their electrical characteristics due to the adsorbed water at the semiconductor surface. Formation of a SAM of ODPA on the top of InZnO removed water molecules weakly absorbed at the back channel and prevented water diffusion from the surroundings. Therefore the passivated devices exhibited significantly reduced hysteretic characteristics. Secondly, we developed a simple spin-coating approach for high- k dielectrics (Al2O3, ZrO2, Y 2O3 and TiO2). These materials were used as gate dielectrics for solution-processed In2O3 or InZnO TFTs. Among the high-k dielectrics, the Al2O3-based devices showed the best performance, which is attributed to the smooth dielectric/semiconductor interface and the low interface trap density besides its good insulating property. Thirdly, the formation and properties of Al2O3 thin films under various annealing temperatures were intensively studied, revealing that the sol-gel-derived Al2O3 thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide. Besides, the Al2O 3 film was used as gate dielectric for solution-processed oxide TFTs, resulting in high mobility and low operating voltage. Finally, we proposed a green route for

  1. High quality transparent conducting oxide thin films

    DOEpatents

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  2. Chemical durability of lead-oxide-based, thick-film binder glasses

    SciTech Connect

    Mattox, D.M.; Robinson, J.H.

    1997-05-01

    Lead-oxide-bearing glasses are incompatible with aluminum nitride metallizations, and federal legislation is recommending their replacement in thick-film electronics and labeling. To evaluate alternatives, the benchmark chemical durabilities of the lead borosilicate and lead aluminate thick-film binder glasses have been determined. Aluminum oxide (Al{sub 2}O{sub 3}) benefits water durability moderately, acid durability substantially, and basic durability indistinguishably. The rate of attack in water is approximately two orders of magnitude greater than for soda-lime glass. The thermal contractions of the glasses are compatible. An apparent, spontaneous phase separation in the Al{sub 2}O{sub 3}-free glass is suppressed by Al{sub 2}O{sub 3} that is included as a batch component.

  3. Patterning of Indium Tin Oxide Films

    NASA Technical Reports Server (NTRS)

    Immer, Christopher

    2008-01-01

    A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

  4. Cell Adhesion and Growth on the Anodized Aluminum Oxide Membrane.

    PubMed

    Park, Jeong Su; Moon, Dalnim; Kim, Jin-Seok; Lee, Jin Seok

    2016-03-01

    Nanotopological cues are popular tools for in vivo investigation of the extracellular matrix (ECM) and cellular microenvironments. The ECM is composed of multiple components and generates a complex microenvironment. The development of accurate in vivo methods for the investigation of ECM are important for disease diagnosis and therapy, as well as for studies on cell behavior. Here, we fabricated anodized aluminum oxide (AAO) membranes using sulfuric and oxalic acid under controlled voltage and temperature. The membranes were designed to possess three different pore and interpore sizes, AAO-1, AAO-2, and AAO-3 membranes, respectively. These membranes were used as tools to investigate nanotopology-signal induced cell behavior. Cancerous cells, specifically, the OVCAR-8 cell-line, were cultured on porous AAO membranes and the effects of these membranes on cell shape, proliferation, and viability were studied. AAO-1 membranes bearing small sized pores were found to maintain the spreading shape of the cultured cells. Cells cultured on AAO-2 and AAO-3 membranes, bearing large pore-sized AAO membranes, changed shape from spreading to rounding. Furthermore, cellular area decreased when cells were cultured on all three AAO membranes that confirmed decreased levels of focal adhesion kinase (FAK). Additionally, OVCAR-8 cells exhibited increased proliferation on AAO membranes possessing various pore sizes, indicating the importance of the nanosurface structure in regulating cell behaviors, such as cell proliferation. Our results suggest that porous-AAO membranes induced nanosurface regulated cell behavior as focal adhesion altered the intracellular organization of the cytoskeleton. Our results may find potential applications as tools in in vivo cancer research studies. PMID:27280255

  5. Anodic Aluminum Oxide (AAO) Membranes for Cellular Devices

    NASA Astrophysics Data System (ADS)

    Ventura, Anthony P.

    Anodic Aluminum Oxide (AAO) membranes can be fabricated with a highly tunable pore structure making them a suitable candidate for cellular hybrid devices with single-molecule selectivity. The objective of this study was to characterize the cellular response of AAO membranes with varying pore sizes to serve as a proof-of-concept for an artificial material/cell synapse system. AAO membranes with pore diameters ranging from 34-117 nm were achieved via anodization at a temperature of -1°C in a 2.7% oxalic acid electrolyte. An operating window was established for this setup to create membranes with through-pore and disordered pore morphologies. C17.2 neural stem cells were seeded onto the membranes and differentiated via serum withdrawal. The data suggests a highly tunable correlation between AAO pore diameter and differentiated cell populations. Analysis of membranes before and after cell culture indicated no breakdown of the through-pore structure. Immunocytochemistry (ICC) showed that AAO membranes had increased neurite outgrowth when compared to tissue culture treated (TCT) glass, and neurite outgrowth varied with pore diameter. Additionally, lower neuronal percentages were found on AAO as compared to TCT glass; however, neuronal population was also found to vary with pore diameter. Scanning electron microscopy (SEM) and ICC images suggested the presence of a tissue-like layer with a mixed-phenotype population. AAO membranes appear to be an excellent candidate for cellular devices, but more work must be completed to understand the surface chemistry of the AAO membranes as it relates to cellular response.

  6. Cell Adhesion and Growth on the Anodized Aluminum Oxide Membrane.

    PubMed

    Park, Jeong Su; Moon, Dalnim; Kim, Jin-Seok; Lee, Jin Seok

    2016-03-01

    Nanotopological cues are popular tools for in vivo investigation of the extracellular matrix (ECM) and cellular microenvironments. The ECM is composed of multiple components and generates a complex microenvironment. The development of accurate in vivo methods for the investigation of ECM are important for disease diagnosis and therapy, as well as for studies on cell behavior. Here, we fabricated anodized aluminum oxide (AAO) membranes using sulfuric and oxalic acid under controlled voltage and temperature. The membranes were designed to possess three different pore and interpore sizes, AAO-1, AAO-2, and AAO-3 membranes, respectively. These membranes were used as tools to investigate nanotopology-signal induced cell behavior. Cancerous cells, specifically, the OVCAR-8 cell-line, were cultured on porous AAO membranes and the effects of these membranes on cell shape, proliferation, and viability were studied. AAO-1 membranes bearing small sized pores were found to maintain the spreading shape of the cultured cells. Cells cultured on AAO-2 and AAO-3 membranes, bearing large pore-sized AAO membranes, changed shape from spreading to rounding. Furthermore, cellular area decreased when cells were cultured on all three AAO membranes that confirmed decreased levels of focal adhesion kinase (FAK). Additionally, OVCAR-8 cells exhibited increased proliferation on AAO membranes possessing various pore sizes, indicating the importance of the nanosurface structure in regulating cell behaviors, such as cell proliferation. Our results suggest that porous-AAO membranes induced nanosurface regulated cell behavior as focal adhesion altered the intracellular organization of the cytoskeleton. Our results may find potential applications as tools in in vivo cancer research studies.

  7. Solid-State NMR Characterization of Aluminum Oxide Nanofibers

    SciTech Connect

    Cross, Jennifer L; Tuttle, Ricky W; Ramsier, Rex D; Espe, Mathew

    2006-07-24

    Aluminum oxide nanofibers have been generated by an electrospinning process, creating fibers with diameters on the nanometer scale and aspect ratios greater than a thousand. These nanofibers have the potential of providing enhanced catalytic properties, due to their large surface area and controllable compositions. Solid-state NMR is being used to investigate both the bulk and surface properties of these materials. 27Al NMR has shown that no chemistry occurs during the electrospinning process, even though potentials in excess of 20 kV are applied to the sample. Thermal treatment of the fibers to convert them to alumina results in the formation of different phases, with the phases identified by the relative populations of 4-, 5-, and 6-coordinate alumina sites. Heating to 525°C or 1200°C produces a species similar to the catalytically active gamma-phase or conversion of the nanofibers into the thermodynamically stable alumina phase, respectively. 1H-27Al CP/MAS has shown that the alumina phase has a low population of surface hydroxyls, whereas the “gamma-alumina” form has a much higher fraction of 5-coordinate sites, compared to materials synthesized by traditional techniques. Organophosphates are being used as molecular probes in the characterization of the nanofiber surfaces. 31P CP/MAS data has revealed the presence of mono-, bi- and tri-denate bound phosphate groups on the surface, with the onset of surface alumina dissolution with sample heating. The application of 1H-31P HETCOR shows that the three different types of bound organophosphates are intermixed, rather than there being separate domains for each type. 31P-27Al CP is also being used to distinguish the types of surface alumina sites bound to the phosphate species.

  8. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    PubMed

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material. PMID:26960451

  9. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    PubMed

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material.

  10. A colorimetric sensor based on anodized aluminum oxide (AAO) substrate for the detection of nitroaromatics.

    SciTech Connect

    Liu, Y.; Wang, H. H.; Indacochea, J. E.; Wang, M. L.

    2011-12-15

    Simple and low cost colorimetric sensors for explosives detection were explored and developed. Anodized aluminum oxide (AAO) with large surface area through its porous structure and light background color was utilized as the substrate for colorimetric sensors. Fabricated thin AAO films with thickness less than {approx} 500 nm allowed us to observe interference colors which were used as the background color for colorimetric detection. AAO thin films with various thickness and pore-to-pore distance were prepared through anodizing aluminum foils at different voltages and times in dilute sulfuric acid. Various interference colors were observed on these samples due to their difference in structures. Accordingly, suitable anodization conditions that produce AAO samples with desired light background colors for optical applications were obtained. Thin film interference model was applied to analyze the UV-vis reflectance spectra and to estimate the thickness of the AAO membranes. We found that the thickness of produced AAO films increased linearly with anodization time in sulfuric acid. In addition, the growth rate was higher for AAO anodized using higher voltages. The thin film interference formulism was further validated with a well established layer by layer deposition technique. Coating poly(styrene sulfonate) sodium salt (PSS) and poly(allylamine hydrochloride) (PAH) layer by layer on AAO thin film consistently shifted its surface color toward red due to the increase in thickness. The red shift of UV-vis reflectance was correlated quantitatively to the number of layers been assembled. This sensitive red shift due to molecular attachment (increase in thickness) on AAO substrate was applied toward nitroaromatics detection. Aminopropyltrimethoxysilane (APTS) which can be attached onto AAO nanowells covalently through silanization and attract TNT molecules was coated and applied for TNT detection. UV-vis spectra of AAO with APTS shifted to the longer wavelength side due to

  11. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  12. Metal current collect protected by oxide film

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

    2004-05-25

    Provided are low-cost, mechanically strong, highly electronically conductive current collects and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical devices having as current interconnects a ferritic steel felt or screen coated with a protective oxide film.

  13. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  14. Epitaxial Deposition of Low-Defect Aluminum Nitride and Aluminum Gallium Nitride Films

    NASA Astrophysics Data System (ADS)

    Jain, Rakesh

    The bjective of my research was to develop low-defect AlN and AlGaN templates to enable pseudo-homoepitaxial deposition of UV-LEDs. Two approaches have been used to achieve this objective. Firstly, hydride vapor phase epitaxy (HVPE) process was used to prepare thick AlN films with lower defect density. Interactions of dislocations in thicker films result in their annihilation. Secondly, since thick films grown on sapphire tend to crack beyond a critical thickness (3-5 mum), epitaxial lateral overgrowth (ELOG) approach was employed to eliminate cracking and to further reduce the defect density. The growth technique was switched from HVPE to Metalorganic chemical vapor deposition (MOCVD) due to much improved material quality with the later method. An HVPE growth system was first designed and constructed from ground up [1]. It is a vertical system with a quartz chamber and a resistively heated furnace. AlCl3 and NH3 were used as the precursors. AlCl3 was generated by passing HCl gas (diluted with H2) through Al metal source. A linear relationship between growth rate and HCl flow rate indicated that the growth rate is limited by mass transportation. Growth parameters including temperature, chamber pressure and V/III ratio were optimized to improve the film quality. Thick films of AlN with thicknesses exceeding 25 mum were grown with growth rates as high as 20 mum/hr [2]. AFM study revealed that surface roughness of HVPE grown AlN films strongly depends on the growth rate. The lowest RMS roughness for HVPE grown film was 1.9 nm. These films had typical (002) full-width at half maximum (FWHM) values ranging from 24 -- 400 arcsec, depending on the growth rate of the respective films. The crystalline quality of the films was also found to be deteriorating as the growth rate increased. It is inferred that the growth mode changes from two dimensional to three dimensional at higher growth rates due to reduced adatom migration length. PL spectrum exhibited near-band-edge (NBE

  15. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM. PART II: STRENGTH AND DURABILITY OF LAP JOINTS

    EPA Science Inventory

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 A in thickness) were deposited onto 6111-T4 aluminum substrates in radio frequency and microwave powered reactors and used as primers for structural adhesive bonding. Processing variables such as substrate pre-treatment,...

  16. Self-assembly formation of lipid bilayer coatings on bare aluminum oxide: overcoming the force of interfacial water.

    PubMed

    Jackman, Joshua A; Tabaei, Seyed R; Zhao, Zhilei; Yorulmaz, Saziye; Cho, Nam-Joon

    2015-01-14

    Widely used in catalysis and biosensing applications, aluminum oxide has become popular for surface functionalization with biological macromolecules, including lipid bilayer coatings. However, it is difficult to form supported lipid bilayers on aluminum oxide, and current methods require covalent surface modification, which masks the interfacial properties of aluminum oxide, and/or complex fabrication techniques with specific conditions. Herein, we addressed this issue by identifying simple and robust strategies to form fluidic lipid bilayers on aluminum oxide. The fabrication of a single lipid bilayer coating was achieved by two methods, vesicle fusion under acidic conditions and solvent-assisted lipid bilayer (SALB) formation under near-physiological pH conditions. Importantly, quartz crystal microbalance with dissipation (QCM-D) monitoring measurements determined that the hydration layer of a supported lipid bilayer on aluminum oxide is appreciably thicker than that of a bilayer on silicon oxide. Fluorescence recovery after photobleaching (FRAP) analysis indicated that the diffusion coefficient of lateral lipid mobility was up to 3-fold greater on silicon oxide than on aluminum oxide. In spite of this hydrodynamic coupling, the diffusion coefficient on aluminum oxide, but not silicon oxide, was sensitive to the ionic strength condition. Extended-DLVO model calculations estimated the thermodynamics of lipid-substrate interactions on aluminum oxide and silicon oxide, and predict that the range of the repulsive hydration force is greater on aluminum oxide, which in turn leads to an increased equilibrium separation distance. Hence, while a strong hydration force likely contributes to the difficulty of bilayer fabrication on aluminum oxide, it also confers advantages by stabilizing lipid bilayers with thicker hydration layers due to confined interfacial water. Such knowledge provides the basis for improved surface functionalization strategies on aluminum oxide

  17. Self-assembly formation of lipid bilayer coatings on bare aluminum oxide: overcoming the force of interfacial water.

    PubMed

    Jackman, Joshua A; Tabaei, Seyed R; Zhao, Zhilei; Yorulmaz, Saziye; Cho, Nam-Joon

    2015-01-14

    Widely used in catalysis and biosensing applications, aluminum oxide has become popular for surface functionalization with biological macromolecules, including lipid bilayer coatings. However, it is difficult to form supported lipid bilayers on aluminum oxide, and current methods require covalent surface modification, which masks the interfacial properties of aluminum oxide, and/or complex fabrication techniques with specific conditions. Herein, we addressed this issue by identifying simple and robust strategies to form fluidic lipid bilayers on aluminum oxide. The fabrication of a single lipid bilayer coating was achieved by two methods, vesicle fusion under acidic conditions and solvent-assisted lipid bilayer (SALB) formation under near-physiological pH conditions. Importantly, quartz crystal microbalance with dissipation (QCM-D) monitoring measurements determined that the hydration layer of a supported lipid bilayer on aluminum oxide is appreciably thicker than that of a bilayer on silicon oxide. Fluorescence recovery after photobleaching (FRAP) analysis indicated that the diffusion coefficient of lateral lipid mobility was up to 3-fold greater on silicon oxide than on aluminum oxide. In spite of this hydrodynamic coupling, the diffusion coefficient on aluminum oxide, but not silicon oxide, was sensitive to the ionic strength condition. Extended-DLVO model calculations estimated the thermodynamics of lipid-substrate interactions on aluminum oxide and silicon oxide, and predict that the range of the repulsive hydration force is greater on aluminum oxide, which in turn leads to an increased equilibrium separation distance. Hence, while a strong hydration force likely contributes to the difficulty of bilayer fabrication on aluminum oxide, it also confers advantages by stabilizing lipid bilayers with thicker hydration layers due to confined interfacial water. Such knowledge provides the basis for improved surface functionalization strategies on aluminum oxide

  18. Recording and tribological properties of CoNi magnetic films on chemically textured aluminum rigid disk substrates (abstract)

    NASA Astrophysics Data System (ADS)

    Tsuya, N.; Tokushima, T.; Hirayama, Y.; Oka, Y.

    1991-04-01

    In a rigid disk a very smooth surface is desirable for high density recording, while it tends to stick to the magnetic head. To avoid this difficulty, the mechanical texturing (M/T) is widely used. Unfortunately very low flying height can't be achieved with the M/T. To improve the flying height, authors have developed a new texturing process using anodically oxidized aluminum substrates named chemical texturing (C/T).1 Aluminum anodic oxide films have a regularly arranged honeycomb structure and uniform and roughness-controlled surfaces were formed by etching process of chemical texturing. In the present research, the relation between the recording and tribological properties and the etching conditions were investigated. On C/T substrates Cr, a longitudinal magnetic layer CoNi, C were sputtered in an inline sputtering equipment. The surface of the sputtered layer was flat (Ra<5 Å) and uniform. Magnetic and electrical properties (coercive force, squareness, over write, modulation and so on) were examined. In spite of isotropy on the disk surfaces, the modulation caused by the inline sputtering was not observed, and high coercive force of 1200 Oe was obtained. Tribological properties (gride height, CSS, friction) were measured. Gride height was lower than 0.1 μm, and CSS more than 30 000 cycles. In semi-pilot plant production, thousands of C/T disks were prepared. Yield of disks having less than 5 missing and/or extra pulses was higher than 95%.

  19. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    SciTech Connect

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; Esvan, Jerome; Lafont, Marie-Christine; Scheid, Emmanuel; Veith, Gabriel M.; Vahlas, Constantin

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.

  20. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    DOE PAGESBeta

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; Esvan, Jerome; Lafont, Marie-Christine; Scheid, Emmanuel; Veith, Gabriel M.; Vahlas, Constantin

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties butmore » an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.« less

  1. Innovative technique for tailoring intrinsic stress in reactively sputtered piezoelectric aluminum nitride films

    SciTech Connect

    Felmetsger, V. V.; Laptev, P. N.; Tanner, S. M.

    2009-05-15

    Novel technical and technological solutions enabling effective stress control in highly textured polycrystalline aluminum nitride (AlN) thin films deposited with ac (40 kHz) reactive sputtering processes are discussed. Residual stress in the AlN films deposited by a dual cathode S-Gun magnetron is well controlled by varying Ar gas pressure, however, since deposition rate and film thickness uniformity depend on gas pressure too, an independent stress control technique has been developed. The technique is based on regulation of the flux of the charged particles from ac plasma discharge to the substrate. In the ac powered S-Gun, a special stress adjustment unit (SAU) is employed for reducing compressive stress in the film by means of redistribution of discharge current between electrodes of the S-Gun leading to controllable suppression of bombardment of the growing film. This technique is complementary to AlN deposition with rf substrate bias which increases ion bombardment and shifts stress in the compressive direction, if required. Using SAU and rf bias functions ensures tailoring intrinsic stress in piezoelectric AlN films for a particular application from high compressive -700 MPa to high tensile +300 MPa and allows the gas pressure to be adjusted independently to fine control the film uniformity. The AlN films deposited on Si substrates and Mo electrodes have strong (002) texture with full width at half maximum ranging from 2 degree sign for 200 nm to 1 degree sign for 2000 nm thick films.

  2. Microheterogeneity of ruthenium oxide film anodes

    SciTech Connect

    Roginskaya, Yu.E.; Belova, I.D.; Galyamov, B.S.; Popkov, Yu.M.; Zakhar'in, D.S.

    1988-03-01

    Following an analysis of x-ray diffraction, differential thermal analysis, and infrared and x-ray photoelectron spectroscopy data for ruthenium hydroxide and ruthenium oxide films heat-treated at temperatures between 300 and 600 degrees C, the composition and structure of the ruthenium hydroxide was determined and it was shown that the ruthenium oxide film electrodes (up to 600 degrees C) are inhomogeneous in their composition and structure; they contain regions measuring 15-20 nm with long-rage order which in their composition and structure correspond to the anhydrous rutile phase of ruthenium dioxide, and amorphous regions identical with ruthenium hydroxide. The relation between the electrochemical behavior of the ruthenium oxide electrodes and the results obtained is discussed.

  3. Semitransparent polymer-based solar cells with aluminum-doped zinc oxide electrodes.

    PubMed

    Wilken, Sebastian; Wilkens, Verena; Scheunemann, Dorothea; Nowak, Regina-Elisabeth; von Maydell, Karsten; Parisi, Jürgen; Borchert, Holger

    2015-01-14

    With the use of two transparent electrodes, organic polymer-fullerene solar cells are semitransparent and may be combined to parallel-connected multijunction devices or used for innovative applications like power-generating windows. A challenging issue is the optimization of the electrodes, to combine high transparency with adequate electric properties. In the present work, we study the potential of sputter-deposited aluminum-doped zinc oxide as an alternative to the widely used but relatively expensive indium tin oxide (ITO) as cathode material in semitransparent polymer-fullerene solar cells. Concerning the anode, we utilized an insulator-metal-insulator structure based on ultrathin Au films embedded between two evaporated MoO3 layers, with the outer MoO3 film (capping layer) serving as a light coupling layer. The performance of the ITO-free semitransparent polymer-fullerene solar cells was systematically studied as dependent on the thickness of the capping layer and the active layer as well as the illumination direction. These variations were found to have strong impact on the obtained photocurrent densities. We performed optical simulations of the electric field distribution within the devices using the transfer-matrix method, to analyze the origin of the current density variations in detail and provide deep insight into the device physics. With the conventional absorber materials studied here, optimized ITO-free and semitransparent devices reached 2.0% power conversion efficiency and a maximum optical transmission of 60%, with the device concept being potentially transferable to other absorber materials.

  4. Study on the fabrication of back surface reflectors in nano-crystalline silicon thin-film solar cells by using random texturing aluminum anodization

    NASA Astrophysics Data System (ADS)

    Shin, Kang Sik; Jang, Eunseok; Cho, Jun-Sik; Yoo, Jinsu; Park, Joo Hyung; Byungsung, O.

    2015-09-01

    In recent decades, researchers have improved the efficiency of amorphous silicon solar cells in many ways. One of the easiest and most practical methods to improve solar-cell efficiency is adopting a back surface reflector (BSR) as the bottom layer or as the substrate. The BSR reflects the incident light back to the absorber layer in a solar cell, thus elongating the light path and causing the so-called "light trapping effect". The elongation of the light path in certain wavelength ranges can be enhanced with the proper scale of BSR surface structure or morphology. An aluminum substrate with a surface modified by aluminum anodizing is used to improve the optical properties for applications in amorphous silicon solar cells as a BSR in this research due to the high reflectivity and the low material cost. The solar cells with a BSR were formed and analyzed by using the following procedures: First, the surface of the aluminum substrate was degreased by using acetone, ethanol and distilled water, and it was chemically polished in a dilute alkali solution. After the cleaning process, the aluminum surface's morphology was modified by using a controlled anodization in a dilute acid solution to form oxide on the surface. The oxidized film was etched off by using an alkali solution to leave an aluminum surface with randomly-ordered dimple-patterns of approximately one micrometer in size. The anodizing conditions and the anodized aluminum surfaces after the oxide layer had been removed were systematically investigated according to the applied voltage. Finally, amorphous silicon solar cells were deposited on a modified aluminum plate by using dc magnetron sputtering. The surfaces of the anodized aluminum were observed by using field-emission scanning electron microscopy. The total and the diffuse reflectances of the surface-modified aluminum sheets were measured by using UV spectroscopy. We observed that the diffuse reflectances increased with increasing anodizing voltage. The

  5. Structure stability and corrosion inhibition of super-hydrophobic film on aluminum in seawater

    NASA Astrophysics Data System (ADS)

    Yin, Yansheng; Liu, Tao; Chen, Shougang; Liu, Tong; Cheng, Sha

    2008-12-01

    A novel and stable super-hydrophobic film was prepared by myristic acid (CH 3(CH 2) 12COOH, mya) chemically adsorbed onto the anodized aluminum surface. The static contact angle for seawater on the surface was measured to be 154°. As evidenced by molecular dynamics (MD) simulations and electrochemical impedance spectroscopy (EIS), the effect of ethanol solvent on the film stability was proved. The surface structure and composition were then characterized by means of scanning electron microscopy (SEM) with energy dispersive X-ray spectrum (EDS) and atomic force microscope (AFM). The electrochemical measurements showed that the super-hydrophobic surface significantly decreased the corrosion currents densities ( icorr), corrosion rates and double layer capacitance ( Cdl), as simultaneously increased the values of polarization resistance ( Rct) of aluminum in sterile seawater.

  6. Effects of surface roughness and oxide layer on the thermal boundary conductance at aluminum/silicon interfaces

    NASA Astrophysics Data System (ADS)

    Hopkins, Patrick E.; Phinney, Leslie M.; Serrano, Justin R.; Beechem, Thomas E.

    2010-08-01

    In nanosystems, the primary scattering mechanisms occur at the interfaces between the material layers. As such, the structure and composition around these interfaces can affect scattering rates and, therefore, thermal resistances. In this work, we measure the room-temperature thermal boundary conductance of aluminum films grown on silicon substrates subjected to various pre-Al-deposition surface treatments with a pump-probe thermoreflectance technique. The Si surfaces are characterized with atomic force microscopy to determine mean surface roughness. The measured thermal boundary conductances decrease as Si surface roughness increases. In addition, stripping of the native oxide layer from the surface of the Si substrate immediately prior to Al film deposition causes the thermal boundary conductance to increase. The measured data are compared to an extension of the diffuse mismatch model that accounts for interfacial mixing and structure around the interface in order to better elucidate the thermal scattering processes affecting thermal boundary conductance at rough interfaces.

  7. Large-scale fabrication of 2-D nanoporous graphene using a thin anodic aluminum oxide etching mask.

    PubMed

    Lee, Jae-Hyun; Jang, Yamujin; Heo, Keun; Lee, Jeong-Mi; Choi, Soon Hyung; Joo, Won-Jae; Hwang, Sung Woo; Whang, Dongmok

    2013-11-01

    A large-scale nanoporous graphene (NPG) fabrication method via a thin anodic aluminum oxide (AAO) etching mask is presented in this paper. A thin AAO film is successfully transferred onto a hydrophobic graphene surface under no external force. The AAO film is completely stacked on the graphene due to the van der Waals force. The neck width of the NPG can be controlled ranging from 10 nm to 30 nm with different AAO pore widening times. Extension of the NPG structure is demonstrated on a centimeter scale up to 2 cm2. AAO and NPG structures are characterized using optical microscopy (OM), Raman spectroscopy and field-emission scanning electron microscopy (FE-SEM). A field effect transistor (FET) is realized by using NPG. Its electrical characteristics turn out to be different from that of pristine graphene, which is due to the periodic nanostructures. The proposed fabrication method could be adapted to a future graphene-based nano device. PMID:24245263

  8. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  9. Improvement of plasmonic enhancement of quantum dot emission via an intermediate silicon-aluminum oxide interface

    SciTech Connect

    Wing, Waylin J.; Sadeghi, Seyed M. Campbell, Quinn

    2015-01-05

    We studied the emission of quantum dots in the presence of plasmon-metal oxide substrates, which consist of arrays of metallic nanorods embedded in amorphous silicon coated with a nanometer-thin layer of aluminum oxide on the top. We showed that the combined effects of plasmons and the silicon-aluminum oxide interface can lead to significant enhancement of the quantum efficiency of quantum dots. Our results show that such an interface can significantly enhance plasmonic effects of the nanorods via quantum dot-induced exciton-plasmon coupling, leading to partial polarization of the quantum dots' emission.

  10. Niobium-aluminum base alloys having improved, high temperature oxidation resistance

    NASA Technical Reports Server (NTRS)

    Hebsur, Mohan G. (Inventor); Stephens, Joseph R. (Inventor)

    1991-01-01

    A niobium-aluminum base alloy having improved oxidation resistance at high temperatures and consisting essentially of 48%-52% niobium, 36%-42% aluminum, 4%-10% chromium, 0%-2%, more preferably 1%-2%, silicon and/or tungsten with tungsten being preferred, and 0.1%-2.0% of a rare earth selected from the group consisting of yttrium, ytterbium and erbium. Parabolic oxidation rates, k.sub.p, at 1200.degree. C. range from about 0.006 to 0.032 (mg/cm.sup.2).sup.2 /hr. The new alloys also exhibit excellent cyclic oxidation resistance.

  11. Aluminum and copper in drinking water enhance inflammatory or oxidative events specifically in the brain.

    PubMed

    Becaria, Angelica; Lahiri, Debomoy K; Bondy, Stephen C; Chen, DeMao; Hamadeh, Ali; Li, Huihui; Taylor, Russell; Campbell, Arezoo

    2006-07-01

    Inflammatory and oxidative events are up-regulated in the brain of AD patients. It has been reported that in animal models of AD, exposure to aluminum (Al) or copper (Cu) enhanced oxidative events and accumulation of amyloid beta (Abeta) peptides. The present study was designed to evaluate the effect of a 3-month exposure of mice to copper sulfate (8 microM), aluminum lactate (10 or 100 microM), or a combination of the salts. Results suggest that although Al or Cu may independently initiate inflammatory or oxidative events, they may function cooperatively to increase APP levels. PMID:16697052

  12. Influence of aluminum oxide film on thermocompression bonding of gold wire to evaporated aluminum film

    NASA Technical Reports Server (NTRS)

    Iwata, S.; Ishizaka, A.; Yamamoto, H.

    1984-01-01

    The influence of Al surface condition on the thermocompression bonding of Au wires to Al electrodes for integrated electric circuits was studied. Au wires were connected to Al electrodes by nail-head bonding after various Al surface treatments. Bonding was evaluated by measuring the wire pull strength and fraction of the number of failures at Au-Al bonds to the total number of failures. Dependence of the fraction on applied load was derived theoretically with a parameter named critical load to take into consideration the differences in Al surface condition. The relation also held explicately for various surface treatments. Characterization of the Al surface was carried out by electron microscopy for chemical analysis.

  13. Formation of oxide layers on aluminum, niobium, and tantalum in molten alkali metal carbonates

    NASA Astrophysics Data System (ADS)

    Nikitina, E. V.; Kazakovtseva, N. A.

    2013-08-01

    The electrochemical synthesis of niobium, tantalum, and aluminum oxide nanolayers is studied in the melt of lithium, sodium, and potassium carbonates with various additives to a salt phase in an oxidizing atmosphere at a temperature of 773 and 873 K. A scheme is proposed for high-temperature anion local activation of the process.

  14. Preparation of silicate tungsten bronzes on aluminum by plasma electrolytic oxidation process in 12-tungstosilicic acid

    NASA Astrophysics Data System (ADS)

    Petković, M.; Stojadinović, S.; Vasilić, R.; Belča, I.; Nedić, Z.; Kasalica, B.; Mioč, U. B.

    2011-09-01

    The growth of silicate tungsten bronzes on aluminum by plasma electrolytic oxidation in 12-tungstosilicic acid is experimentally investigated and discussed. Real time imaging and optical emission spectroscopy characterization of plasma electrolytic oxidation show that spatial density of microdischarges is the highest in the early stage of the process, while the percentage of oxide coating area covered by active discharge sites decreases slowly with time. Emission spectrum of microdischarges has several intensive band peaks originating either from aluminum electrode or from the electrolyte. Surface roughness of obtained oxide coatings increases with prolonged time of plasma electrolytic oxidation, as their microhardness decreases. Raman spectroscopy and energy dispersive X-ray spectroscopy are employed to confirm that the outer layer of oxide coatings formed during the plasma electrolytic oxidation process is silicate tungsten bronze

  15. Aluminum thin film growth on a Ru(0001) surface

    NASA Astrophysics Data System (ADS)

    Ceballos, G.; Theis, M.; Pelzer, Th.; Schick, M.; Rangelov, G.; Wandelt, K.

    1995-07-01

    The growth of thin Al films on a Ru(0001) substrate has been investigated by means of AES, LEED, TDS, and PAX measurements. A plot of the Ru and Al AES intensities versus evaporation time for a deposition temperature of 300 K reveals a distinct break at θAl = 1, while for higher coverages the Ru intensity decays exponentially indicating a three-dimensional growth of Al clusters. From this behavior we deduce a Stranski-Krastanov growth mechanism. This behavior persists up to 650 K. For higher deposition temperatures a diffusion of Al into the substrate and a partial desorption of the Al film is found. At low Al coverage the LEED pattern reveals an initial film growth with Al(111) structure and an expansion of the interatomic spacing of 2% compared to the Al(111) bulk plane. This superstructure persisted up to ˜ 2.5 ML. In the submonolayer regime CO and Xe TD-spectra as well as Xe 4d PAX-spectra suggest together with LEED an island growth.

  16. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  17. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride - Technology and piezoelectric properties

    NASA Astrophysics Data System (ADS)

    Stoeckel, C.; Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-01

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d31 is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d33.

  18. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    SciTech Connect

    Shao, Guojian; Lou, Chaogang; Kang, Jian; Zhang, Hao

    2015-12-21

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency.

  19. Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices

    NASA Astrophysics Data System (ADS)

    Zalazar, M.; Gurman, P.; Park, J.; Kim, D.; Hong, S.; Stan, L.; Divan, R.; Czaplewski, D.; Auciello, O.

    2013-03-01

    The physics for integration of piezoelectric aluminum nitride (AlN) films with underlying insulating ultrananocrystalline diamond (UNCD), and electrically conductive grain boundary nitrogen-incorporated UNCD (N-UNCD) and boron-doped UNCD (B-UNCD) layers, as membranes for microelectromechanical system implantable drug delivery devices, has been investigated. AlN films deposited on platinum layers on as grown UNCD or N-UNCD layer (5-10 nm rms roughness) required thickness of ˜400 nm to induce (002) AlN orientation with piezoelectric d33 coefficient ˜1.91 pm/V at ˜10 V. Chemical mechanical polished B-UNCD films (0.2 nm rms roughness) substrates enabled (002) AlN film 200 nm thick, yielding d33 = 5.3 pm/V.

  20. Structural and Mechanical Characteristics of Anodic Oxide Films on Titanium

    SciTech Connect

    Pang, Mengzhi; Eakins, Daniel E; Norton, Murray G; Bahr, David F

    2001-01-01

    Oxide films were grown electrochemically on polycrystalline titanium in 0.1 M sulfuric acid (H2SO4) from open-circuit potential to a final potential of 9.4 V (vs silver-silver chloride [Ag-AgCl]) using three anodization rates: a step polarization, growth at 200 mV/s, and growth at 1 mV/s. Anodic polarization curves showed various degrees of oxygen evolution above 5.4 VAg-AgCl, indicating that the extent of oxide film breakdown depends on film growth rate, with slower growth rates undergoing more severe film breakdown. In-situ characterization of mechanical behavior of oxide films by nanoindentation revealed that the oxide film can sustain a tensile stress up to 2.5 GPa prior to film fracture. Among these three anodization rates, the oxide film formed by step polarization exhibited the highest film-strengthening effect. At applied potentials prior to oxide film breakdown, all films exhibited a strength of ≈1 GPa. The films ranged from amorphous titanium dioxide (TiO2) to anatase, with the extent of crystallization increasing with decreasing film growth rate. Correlations between electrochemical polarization, structural characteristics, and the mechanical behavior of these anodic films are discussed in relationship to electrostrictive stresses, which may lead to the breakdown of passive films. KEY WORDS: anodic polarization, films, nanoindentation, titanium, transmission electron microscopy.

  1. Anomalous hexagonal superstructure of aluminum oxide layer grown on NiAl(110) surface

    NASA Astrophysics Data System (ADS)

    Krukowski, Pawel; Chaunchaiyakul, Songpol; Minagawa, Yuto; Yajima, Nami; Akai-Kasaya, Megumi; Saito, Akira; Kuwahara, Yuji

    2016-11-01

    A modified method for the fabrication of a highly crystallized layer of aluminum oxide on a NiAl(110) surface is reported. The fabrication method involves the multistep selective oxidation of aluminum atoms on a NiAl(110) surface resulting from successive oxygen deposition and annealing. The surface morphology and local electronic structure of the novel aluminum oxide layer were investigated by high-resolution imaging using scanning tunneling microscopy (STM) and current imaging tunneling spectroscopy. In contrast to the standard fabrication method of aluminum oxide on a NiAl(110) surface, the proposed method produces an atomically flat surface exhibiting a hexagonal superstructure. The superstructure exhibits a slightly distorted hexagonal array of close-packed bright protrusions with a periodicity of 4.5 ± 0.2 nm. Atomically resolved STM imaging of the aluminum oxide layer reveals a hexagonal arrangement of dark contrast spots with a periodicity of 0.27 ± 0.02 nm. On the basis of the atomic structure of the fabricated layer, the formation of α-Al2O3(0001) on the NiAl(110) surface is suggested.

  2. Quaternary polymethacrylate-magnesium aluminum silicate films: molecular interactions, mechanical properties and tackiness.

    PubMed

    Rongthong, Thitiphorn; Sungthongjeen, Srisagul; Siepmann, Juergen; Pongjanyakul, Thaned

    2013-12-15

    The aim of this study was to investigate the impact of the addition of magnesium aluminum silicate (MAS), a natural clay, on the properties of polymeric films based on quaternary polymethacrylates (QPMs). Two commercially available aqueous QPM dispersions were studied: Eudragit(®) RS 30D and Eudragit(®) RL 30D (the dry copolymers containing 5 and 10% quaternary ammonium groups, respectively). The composite QPM-MAS films were prepared by casting. Importantly, QPM interacted with MAS and formed small flocculates prior to film formation. Continuous films were obtained up to MAS contents of 19% (referred to the QPM dry mass). ATR-FTIR and PXRD revealed that the positively charged quaternary ammonium groups of QPM interacted with negatively charged SiO(-) groups of MAS, creating nanocomposite materials. This interaction led to improved thermal stability of the composite films. The puncture strength and elongation at break of dry systems decreased with increasing MAS content. In contrast, the puncture strength of the wet QPM-MAS films (upon exposure to acidic or neutral media) increased with increasing MAS content. Furthermore, incorporation of MAS into QPM films significantly decreased the latter's tackiness in the dry and wet state. These findings suggest that nanocomposite formation between QPM and MAS in the systems can enhance the strength of wet films and decrease their tackiness. Thus, MAS offers an interesting potential as novel anti-tacking agent for QPM coatings. PMID:24144950

  3. Quaternary polymethacrylate-magnesium aluminum silicate films: molecular interactions, mechanical properties and tackiness.

    PubMed

    Rongthong, Thitiphorn; Sungthongjeen, Srisagul; Siepmann, Juergen; Pongjanyakul, Thaned

    2013-12-15

    The aim of this study was to investigate the impact of the addition of magnesium aluminum silicate (MAS), a natural clay, on the properties of polymeric films based on quaternary polymethacrylates (QPMs). Two commercially available aqueous QPM dispersions were studied: Eudragit(®) RS 30D and Eudragit(®) RL 30D (the dry copolymers containing 5 and 10% quaternary ammonium groups, respectively). The composite QPM-MAS films were prepared by casting. Importantly, QPM interacted with MAS and formed small flocculates prior to film formation. Continuous films were obtained up to MAS contents of 19% (referred to the QPM dry mass). ATR-FTIR and PXRD revealed that the positively charged quaternary ammonium groups of QPM interacted with negatively charged SiO(-) groups of MAS, creating nanocomposite materials. This interaction led to improved thermal stability of the composite films. The puncture strength and elongation at break of dry systems decreased with increasing MAS content. In contrast, the puncture strength of the wet QPM-MAS films (upon exposure to acidic or neutral media) increased with increasing MAS content. Furthermore, incorporation of MAS into QPM films significantly decreased the latter's tackiness in the dry and wet state. These findings suggest that nanocomposite formation between QPM and MAS in the systems can enhance the strength of wet films and decrease their tackiness. Thus, MAS offers an interesting potential as novel anti-tacking agent for QPM coatings.

  4. Growth of chalcogenide semiconductors within a nanoporous aluminum oxide template

    NASA Astrophysics Data System (ADS)

    Zelenski, Catherine Mary

    This dissertation reports investigations on the synthesis of metal chalcogenide semiconductor nanoparticles grown within the pores of a nanoporous aluminum oxide template. The template used to restrict the growth of the materials contained cylindrical pores, yielding nanoparticles with non-spherical shapes. Two classes of metal chalcogenides were studied: those with three dimensional structures and those with layered structures. Three different methods were developed and investigated for the growth of MQ compounds (M = Cd, Zn, Cu, Hg; Q = S, Te): (1) a dipping method, (2) a U-tube method, and (3) a sublimation. The dipping method produced material on the template's outer surface and within the pores only within ˜2 mum of their ends. Within the limits of the template pore size, particle size and shape could not be controlled. The U-tube method deposited multiple oval shaped particles within each pore of the template. The oval particles were polycrystalline, had sizes ranging from ˜5-120 nm, and were concentrated in only one location in the pores. Reasons for the uneven distribution of particles throughout the pores were investigated. The sublimation method only deposited material on the outer surfaces of the template, and the conditions used for the sublimation altered the morphology of the template. Layered MSsb2 compounds (M = Mo, W, Re, Ti) were prepared by the thermal decomposition of selected precursor molecules within the pores of the template. The fibers produced had the same dimensions as the pores of the template. When MoSsb2 was prepared by this method, tubules of oriented crystals were formed with multiple plugs in each tubule. When WSsb2 was prepared, more solid fibers were formed. The preparation of ReSsb2 and TiSsb2 resulted in fibers that were similar in morphology to the MoSsb2 fibers. The effect of template loading method, precursor concentration, precursor type, solvent, presence of a surfactant, and annealing temperature on morphology and

  5. Interfacial Assembly of Graphene Oxide Films

    NASA Astrophysics Data System (ADS)

    Valtierrez, Cain; Ismail, Issam; Macosko, Christopher; Stottrup, Benjamin

    Controlled assembly of monolayer graphene-oxide (GO) films at the air/water interface is of interest for the development of transparent conductive thin films of chemically-derived graphene. We present experimental results from investigations of the assembly of polydisperse GO sheets at the air-water interface. GO nanosheets with lateral dimensions of greater than 10 microns were created using a modified Tour synthesis (Dimiev and Tour, 2014). GO films were generated with conventional Langmuir trough techniques to control lateral packing density. Film morphology was characterized in situ with Brewster angle microscopy. Films were transferred unto a substrate via the Langmuir-Blodgett deposition technique and imaged with fluorescence quenching microscopy. Through pH modulation of the aqueous subphase, it was found that GO's intrinsic surface activity to the interface increased with increasing subphase acidity. Finally, we found a dominant elastic contribution during uniaxial film deformation as measured by anisotropic pressure measurements. A. M. Dimiev, and J. M. Tour, ``Mechanism of GO Formation,'' ACS Nano, 8, (2014)

  6. Aluminum Corrosion and Turbidity

    SciTech Connect

    Longtin, F.B.

    2003-03-10

    Aluminum corrosion and turbidity formation in reactors correlate with fuel sheath temperature. To further substantiate this correlation, discharged fuel elements from R-3, P-2 and K-2 cycles were examined for extent of corrosion and evidence of breaking off of the oxide film. This report discusses this study.

  7. Combined optical gain and degradation measurements in DCM2 doped Tris-(8-hydroxyquinoline)aluminum thin-films

    NASA Astrophysics Data System (ADS)

    Čehovski, Marko; Döring, Sebastian; Rabe, Torsten; Caspary, Reinhard; Kowalsky, Wolfgang

    2016-04-01

    Organic laser sources offer the opportunity to integrate flexible and widely tunable lasers in polymer waveguide circuits, e.g. for Lab-on-Foil applications. Therefore, it is necessary to understand gain and degradation processes for long-term operation. In this paper we address the challenge of life-time (degradation) measurements of photoluminescence (PL) and optical gain in thin-film lasers. The well known guest-host system of aluminum-chelate Alq3 (Tris-(8-hydroxyquinoline)aluminum) as host material and the laser dye DCM2 (4-(Dicyanomethylene)-2- methyl-6-julolidyl-9-enyl-4H-pyran) as guest material is employed as laser active material. Sample layers have been built up by co-evaporation in an ultrahigh (UHV) vacuum chamber. 200nm thick films of Alq3:DCM2 with different doping concentrations have been processed onto glass and thermally oxidized silicon substrates. The gain measurements have been performed by the variable stripe length (VSL) method. This measurement technique allows to determine the thin-film waveguide gain and loss, respectively. For the measurements the samples were excited with UV irradiation (ƛ = 355nm) under nitrogen atmosphere by a passively Q-switched laser source. PL degradation measurements with regard to the optical gain have been done at laser threshold (approximately 3 μJ/cm2), five times above laser threshold and 10 times above laser threshold. A t50-PL lifetime of > 107 pulses could be measured at a maximum excitation energy density of 32 μJ/cm2. This allows for a detailed analysis of the gain degradation mechanism and therefore of the stimulated cross section. Depending on the DCM2 doping concentration C the stimulated cross section was reduced by 35 %. Nevertheless, the results emphasizes the necessity of the investigation of degradation processes in organic laser sources for long-term applications.

  8. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    SciTech Connect

    Iriarte, G. F.

    2010-03-15

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  9. Metallic oxide switches using thick film technology

    NASA Technical Reports Server (NTRS)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  10. Galvanostatic Ion Detrapping Rejuvenates Oxide Thin Films.

    PubMed

    Arvizu, Miguel A; Wen, Rui-Tao; Primetzhofer, Daniel; Klemberg-Sapieha, Jolanta E; Martinu, Ludvik; Niklasson, Gunnar A; Granqvist, Claes G

    2015-12-01

    Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvanostatic treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. Here we report on amorphous electrochromic (EC) WO3 thin films prepared by sputtering and electrochemically cycled in a lithium-containing electrolyte under conditions leading to severe loss of charge exchange capacity and optical modulation span. Time-of-flight elastic recoil detection analysis (ToF-ERDA) documented pronounced Li(+) trapping associated with the degradation of the EC properties and, importantly, that Li(+) detrapping, caused by a weak constant current drawn through the film for some time, could recover the original EC performance. Thus, ToF-ERDA provided direct and unambiguous evidence for Li(+) detrapping. PMID:26599729

  11. Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

    NASA Astrophysics Data System (ADS)

    Jia, Ye; Wallace, Joshua S.; Qin, Yueling; Gardella, Joseph A.; Dabiran, Amir M.; Singisetti, Uttam

    2016-04-01

    In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

  12. Water clustering on nanostructured iron oxide films

    NASA Astrophysics Data System (ADS)

    Merte, Lindsay R.; Bechstein, Ralf; Peng, Guowen; Rieboldt, Felix; Farberow, Carrie A.; Zeuthen, Helene; Knudsen, Jan; Lægsgaard, Erik; Wendt, Stefan; Mavrikakis, Manos; Besenbacher, Flemming

    2014-06-01

    The adhesion of water to solid surfaces is characterized by the tendency to balance competing molecule-molecule and molecule-surface interactions. Hydroxyl groups form strong hydrogen bonds to water molecules and are known to substantially influence the wetting behaviour of oxide surfaces, but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moiré-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous water are found to coexist at adjacent hydroxylated and hydroxyl-free domains of the moiré structure.

  13. Water Clustering on Nanostructured Iron Oxide Films

    SciTech Connect

    Merte, L. R.; Bechstein, Ralf; Peng, Guowen; Rieboldt, Felix; Farberow, Carrie A.; Zeuthen, Helene; Knudsen, Jan; Laegsgaard, E.; Wendt, Stefen; Mavrikakis, Manos; Besenbacher, Fleming

    2014-06-30

    The adhesion of water to solid surfaces is characterized by the tendency to balance competing molecule–molecule and molecule–surface interactions. Hydroxyl groups form strong hydrogen bonds to water molecules and are known to substantially influence the wetting behaviour of oxide surfaces, but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire´-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer islands form on the are film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous water are found to coexist at adjacent hydroxylated and hydroxyl-free domains of the moire´ structure.

  14. Highly selective optical fluoride ion sensor with submicromolar detection limit based on aluminum(III) octaethylporphyrin in thin polymeric film.

    PubMed

    Badr, Ibrahim H A; Meyerhoff, Mark E

    2005-04-20

    A highly selective, sensitive, and reversible fluoride optical sensing film based on aluminum(III)octaethylporphyrin as a fluoride ionophore and a lipophilic pH indicator as the optical transducer is described. The fluoride optical sensing films exhibit a submicromolar detection limit and high discrimination for fluoride over several lipophilic anions such as nitrate, perchlorate, and thiocyanate. PMID:15826159

  15. Transparent conductive oxides for thin-film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  16. CuO/ZnO coupled oxide films obtained by the electrodeposition technique and their photocatalytic activity in phenol degradation under solar irradiation.

    PubMed

    Paz, Diego S; Foletto, Edson L; Bertuol, Daniel A; Jahn, Sérgio L; Collazzo, Gabriela C; da Silva, Syllos S; Chiavone-Filho, Osvaldo; do Nascimento, Claudio A O

    2013-01-01

    CuO/ZnO coupled oxide films were electrodeposited onto an aluminum substrate and tested as photocatalysts in degradation of phenol molecules in aqueous solution under sunlight. The obtained films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The results showed that the photocatalytic activity of films was significant, especially to coupled oxide film with a CuO/ZnO ratio equal to 0.697, which presented about 70% degradation of the aromatic molecules and 42% of total organic carbon (TOC) removal at 300 min under solar irradiation. Therefore, this work highlights the potential application of CuO/ZnO coupled oxide films obtained by electrodeposition onto aluminum substrate in the field of photocatalysis.

  17. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells.

    PubMed

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-14

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm(-2) at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm(-2)(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness.

  18. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-01

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm-2 at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm-2(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness.

  19. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells.

    PubMed

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-14

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm(-2) at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm(-2)(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness. PMID:27595193

  20. Growth process of nanosized aluminum thin films by pulsed laser deposition for fluorescence enhancement.

    PubMed

    Abdellaoui, N; Pillonnet, A; Berndt, J; Boulmer-Leborgne, C; Kovacevic, E; Moine, B; Penuelas, J; Pereira, A

    2015-03-20

    Pulsed laser deposition was used to deposit aluminum thin films of various thicknesses (tAl) ranging from 5 to 40 nm and to investigate their growth process when they are deposited onto SiO2 and Y2O3. Atomic force microscopy and x-ray reflectivity measurements show that the structure of the Al films are related to the wettability properties of the underlaying layer. Onto SiO2, ultra-smooth layers of aluminum are obtained, due to a perfect wetting of SiO2 by Al. In contrast when deposited onto Y2O3, percolated Al layers are observed with apparent pore size decreasing from 200 to 82 nm as t(Al) is increased from 5 to 40 nm, respectively. This particular morphology is related to partial dewetting of Al on Y2O3. These two different growth mechanisms of aluminum depend therefore on the surface properties of SiO2 and Y2O3. The plasmon resonance of such Al nanostructures in the UV region was then analyzed by studying the coupling between Eu(3+) rare earth emitters and Al. PMID:25712708

  1. Preparation of superior lubricious amorphous carbon films co-doped by silicon and aluminum

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Yang, Jun; Zheng, Jianyun; Liang, Yongmin; Liu, Weimin

    2011-09-01

    Silicon (Si) and aluminum (Al) co-doped amorphous carbon films ((Si, Al)-C:H) were deposited on Si and stainless steel substrates by radio frequency (13.56 MHz) magnetron sputtering. The Al and Si were found to jointly regulate the hybridized carbon bonds. Mechanical properties of the films were detected by nano-indention and scratch tests. The nano-indention results revealed that all the samples exhibited good elastic recovery rate, among which the highest one was beyond 84%. Besides co-regulating the hybridizations of carbon, the co-doped Si and Al also had a common regulation on the mechanical and tribological properties. Especially, the film containing 1.6 at. % of Si and 0.9 at. % of Al showed a super-low friction (< 0.01) and a superior wear resistance in ambient air.

  2. Two-dimensional analysis of spurious modes in aluminum nitride film resonators.

    PubMed

    Gong, Xun; Han, Min; Shang, Xiaoli; Xiong, Jun; Duan, Jie; Sekimoto, Hitoshi

    2007-06-01

    In this paper, a hybrid method, which combines the traditional concept of guided waves and the finite element method (FEM), is proposed to analyze the spurious modes of aluminum nitride (AIN) film with electrodes. First, the guided wave modes in the plated area are obtained by 1-D FEM. Second, a mode-match method is used to satisfy the boundary conditions. The vibration of the film resonator is a superposition of all of the guided modes. With respect to an A1N film resonator, which is a thickness-stretch mode resonator, we have identified three families of spurious modes: extension, thickness-stretch, and thickness-shear. The spectrum of spurious modes is calculated and the influence of the spurious modes is discussed.

  3. Corrosion resistance and durability of siloxane ceramic/polymer films for aluminum alloys in marine environments

    NASA Astrophysics Data System (ADS)

    Kusada, Kentaro

    The objective of this study is to evaluate corrosion resistance and durability of siloxane ceramic/polymer films for aluminum alloys in marine environments. Al5052-H3 and Al6061-T6 were selected as substrates, and HCLCoat11 and HCLCoat13 developed in the Hawaii Corrosion Laboratory were selected for the siloxane ceramic/polymer coatings. The HCLCoat11 is a quasi-ceramic coating that has little to no hydrocarbons in its structure. The HCLCoat13 is formulated to incorporate more hydrocarbons to improve adhesion to substrate surfaces with less active functionalities. In this study, two major corrosion evaluation methods were used, which were the polarization test and the immersion test. The polarization tests provided theoretical corrosion rates (mg/dm 2/day) of bare, HCLCoat11-coated, and HCLCoat13-coated aluminum alloys in aerated 3.15wt% sodium chloride solution. From these results, the HCLCoat13-coated Al5052-H3 was found to have the lowest corrosion rate which was 0.073mdd. The next lowest corrosion rate was 0.166mdd of the HCLCoat11-coated Al5052-H3. Corrosion initiation was found to occur at preexisting breaches (pores) in the films by optical microscopy and SEM analysis. The HCLCoat11 film had many preexisting breaches of 1-2microm in diameter, while the HCLCoat13 film had much fewer preexisting breaches of less than 1microm in diameter. However, the immersion tests showed that the seawater immersion made HCLCoat13 film break away while the HCLCoat11 film did not apparently degrade, indicating that the HCLCoat11 film is more durable against seawater than the HCLCoat13. Raman spectroscopy revealed that there was some degradation of HCLCoat11 and HCLCoat13. For the HCLCoat11 film, the structure relaxation of Si-O-Si linkages was observed. On the other hand, seawater generated C-H-S bonds in the HCLCoat13 film resulting in the degradation of the film. In addition, it was found that the HCLCoat11 coating had anti-fouling properties due to its high water contact

  4. Addressing the Limit of Detectability of Residual Oxide Discontinuities in Friction Stir Butt Welds of Aluminum using Phased Array Ultrasound

    NASA Technical Reports Server (NTRS)

    Johnston, P. H.

    2008-01-01

    This activity seeks to estimate a theoretical upper bound of detectability for a layer of oxide embedded in a friction stir weld in aluminum. The oxide is theoretically modeled as an ideal planar layer of aluminum oxide, oriented normal to an interrogating ultrasound beam. Experimentally-measured grain scattering level is used to represent the practical noise floor. Echoes from naturally-occurring oxides will necessarily fall below this theoretical limit, and must be above the measurement noise to be potentially detectable.

  5. Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

    SciTech Connect

    Akiyama, Morito; Nagase, Toshimi; Umeda, Keiichi; Honda, Atsushi

    2013-01-14

    The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (Sc{sub x}Al{sub 1-x}N) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc{sub 0.41}Al{sub 0.59}N film was 67 GPa, indicating that the FOM is five times larger than that of AlN. The FOM of Sc{sub 0.41}Al{sub 0.59}N film is higher than those of lead zirconate titanate and Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc{sub 0.41}Al{sub 0.59}N film is due to the high d{sub 31} and the low relative permittivity.

  6. Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

    SciTech Connect

    Särhammar, Erik Berg, Sören; Nyberg, Tomas

    2014-07-01

    This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition rate from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.

  7. Oxidation behavior of nanostructured cobalt nickel chromium aluminum yttrium and nickel cobalt chromium aluminum yttrium sprayed by HVOF

    NASA Astrophysics Data System (ADS)

    Mercier, Dominic

    In recent years, much development has been made in the world of nanotechnologies. Hence, nanomaterials, which possess unique characteristics and excellent mechanical properties, are now being used in innovative and advanced applications. Despite the incredible potential of nanomaterials, their use is still at an embryonic stage as a result of the difficulty to mass-produce them. Among the potentially viable application remains the fabrication of nanostructured powders to produce high temperature oxidation resistance coatings. Nanostructured coatings were obtained by thermally spraying cryomilled CoNiCrAlY and NiCoCrAlY feedstock using the HVOF technique. It was found that the milling process used to prepare the powder significantly altered the microstructure of the alloy. In addition to achieving grain size refinement, significant aluminum segregation at grain boundaries was observed. Upon oxidation experiments up to 96 hours in static air at 1000°C an oxide scale composed of an adherent and dense alpha-Al2O3 inner layer with a top layer of fast growing oxides such as NiO, Cr2O3, CoAl2O4 and NiAl2O4 evolved from the coatings. It was found that the formation of a two-layer scale could be prevented through surface grinding prior to oxidation. Moreover, the comparison of the oxidation results of the powders and those of the coatings revealed that the spraying process has a considerable influence on the oxidation behavior of MCrAlYs attributable to the formation of oxide seeds during the spraying process.

  8. Interactions at the Al-S-Fe interface: S inhibition of aluminum oxidation

    SciTech Connect

    Addepalli, S.G.; Lin, J.S.; Ekstrom, B.; Kelber, J.A.

    1999-08-01

    The deposition of aluminum on S/Fe(111) (1 x 1) at 300 K in UHV results in the formation of a disordered S-modified Al adlayer. Insertion of Al between the sulfur atoms and the Fe substrate is indicated by an increase of the S Auger signal with increasing Al deposition. Room-temperature oxidation of AlS/Fe(111) in UHV is inhibited compared to the oxidation of aluminum deposited on the sulfur-free Fe(111). The oxygen-uptake curves and variations in the S(LVV), Fe(MVV) intensities with oxygen exposure are also consistent with the insertion of the aluminum atoms between the S overlayer and the Fe substrate.

  9. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    PubMed Central

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-01-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths. PMID:27667259

  10. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    NASA Astrophysics Data System (ADS)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-09-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  11. Metallic Thin-Film Bonding and Alloy Generation

    NASA Technical Reports Server (NTRS)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  12. The formation mechanism of aluminum oxide tunnel barriers.

    SciTech Connect

    Cerezo, A.; Petford-Long, A. K.; Larson, D. J.; Pinitsoontorn, S.; Singleton, E. W.; Materials Science Division; Univ. Oxford; Seagate Tech.

    2006-01-01

    The functional properties of magnetic tunnel junctions are critically dependant on the nanoscale morphology of the insulating barrier (usually only a few atomic layers thick) that separates the two ferromagnetic layers. Three-dimensional atom probe analysis has been used to study the chemistry of a magnetic tunnel junction structure comprising an aluminium oxide barrier formed by in situ oxidation, both in the under-oxidized and fully oxidized states and before and after annealing. Low oxidation times result in discrete oxide islands. Further oxidation leads to a more continuous, but still non-stoichiometric, barrier with evidence that oxidation proceeds along the top of grain boundaries in the underlying CoFe layer. Post-deposition annealing leads to an increase in the barrier area, but only in the case of the fully oxidized and annealed structure is a continuous planar layer formed, which is close to the stoichiometric Al:O ratio of 2:3. These results are surprising, in that the planar layers are usually considered unstable with respect to breaking up into separate islands. Analysis of the various driving forces suggests that the formation of a continuous layer requires a combination of factors, including the strain energy resulting from the expansion of the oxide during internal oxidation on annealing.

  13. Silicon nanoprofiling with the use of a solid aluminum oxide mask and combined 'dry' etching

    SciTech Connect

    Belov, A. N.; Demidov, Yu. A.; Putrya, M. G.; Golishnikov, A. A.; Vasilyev, A. A.

    2009-12-15

    Technological features of nanoprofiling of silicon protected by a solid mask based on porous aluminum oxide are considered. It is shown that, for a nanoprofiled silicon surface to be formed, it is advisable that combined dry etching be used including preliminary bombardment of structures with accelerated neutral atoms of an inert gas followed by reactive ion etching.

  14. In-situ measurement of the electrical conductivity of aluminum oxide in HFIR

    SciTech Connect

    Zinkle, S.J.; White, D.P.; Snead, L.L.

    1996-10-01

    A collaborative DOE/Monbusho irradiation experiment has been completed which measured the in-situ electrical resistivity of 12 different grades of aluminum oxide during HFIR neutron irradiation at 450{degrees}C. No evidence for bulk RIED was observed following irradiation to a maximum dose of 3 dpa with an applied dc electric field of 200 V/mm.

  15. Fabrication, structural characterization and sensing properties of polydiacetylene nanofibers templated from anodized aluminum oxide

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Polydiacetylene (PDA), a unique conjugated polymer, has shown its potential in the application of chem/bio-sensors and optoelectronics. In this work, we first infiltrated PDA monomer (10, 12-pentacosadiynoic acid, PCDA) melted into the anodized aluminum oxide template, and then illuminated the infil...

  16. Intensity and temperature-dependent photoluminescence of tris (8-hydroxyquinoline) aluminum films

    SciTech Connect

    Ajward, A. M.; Wang, X.; Wagner, H. P.

    2013-12-04

    We investigate the recombination of excitons in tris (8-hydroxyquinoline) aluminum films by intensity and temperature dependent time-resolved photoluminescence (PL). At low temperature (15 K) and elevated excitation intensity the radiative emission is quenched by singlet-singlet annihilation processes. With rising temperature the PL quenching is strongly reduced resulting in a PL efficiency maximum at ∼170 K. The reduced exciton annihilation is attributed to thermally activated occupation of non-quenchable trapped exciton states. Above 170 K the PL efficiency decreases due to thermal de-trapping of radiative states and subsequent migration to non-radiative centers.

  17. Thin zinc oxide and cuprous oxide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Jeong, Seongho

    Metal oxide semiconductors and heterojunctions made from thin films of metal oxide semiconductors have broad range of functional properties and high potential in optical, electrical and magnetic devices such as light emitting diodes, spintronic devices and solar cells. Among the oxide semiconductors, zinc oxide (ZnO) and cuprous oxide (Cu2O) are attractive because they are inexpensive, abundant and nontoxic. As synthesized ZnO is usually an intrinsic n - type semiconductor with wide band gap (3.4 eV) and can be used as the transparent conducting window layer in solar cells. As synthesized Cu2O is usually a p - type semiconductor with a band gap of 2.17 eV and has been considered as a potential material for the light absorbing layer in solar cells. I used various techniques including metal organic chemical vapor deposition, magnetron sputtering and atomic layer deposition to grow thin films of ZnO and Cu2O and fabricated Cu2O/ZnO heterojunctions. I specifically investigated the optical and electrical properties of Cu 2O thin films deposited on ZnO by MOCVD and showed that Cu2O thin films grow as single phase with [110] axis aligned perpendicular to the ZnO surface which is (0001) plane and with in-plane rotational alignment due to (220) Cu2O || (0002)ZnO; [001]Cu2O || [12¯10]ZnO epitaxy. Moreover, I fabricated solar cells based on these Cu2O/ZnO heterojunctions and characterized them. Electrical characterization of these solar cells as a function of temperature between 100 K and 300 K under illumination revealed that interface recombination and tunneling at the interface are the factors that limit the solar cell performance. To date solar cells based on Cu2O/ZnO heterojunctions had low open circuit voltages (~ 0.3V) even though the expected value is around 1V. I achieved open circuit voltages approaching 1V at low temperature (~ 100 K) and showed that if interfacial recombination is reduced these cells can achieve their predicted potential.

  18. Low oxidation state aluminum-containing cluster anions: Cp(∗)AlnH(-), n = 1-3.

    PubMed

    Zhang, Xinxing; Ganteför, Gerd; Eichhorn, Bryan; Mayo, Dennis; Sawyer, William H; Gill, Ann F; Kandalam, Anil K; Schnöckel, Hansgeorg; Bowen, Kit

    2016-08-21

    Three new, low oxidation state, aluminum-containing cluster anions, Cp*AlnH(-), n = 1-3, were prepared via reactions between aluminum hydride cluster anions, AlnHm (-), and Cp*H ligands. These were characterized by mass spectrometry, anion photoelectron spectroscopy, and density functional theory based calculations. Agreement between the experimentally and theoretically determined vertical detachment energies and adiabatic detachment energies validated the computed geometrical structures. Reactions between aluminum hydride cluster anions and ligands provide a new avenue for discovering low oxidation state, ligated aluminum clusters. PMID:27544103

  19. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  20. Formation of linear polyenes in poly(vinyl alcohol) films catalyzed by phosphotungstic acid, aluminum chloride, and hydrochloric acid

    NASA Astrophysics Data System (ADS)

    Tretinnikov, O. N.; Sushko, N. I.; Malyi, A. B.

    2016-07-01

    Formation of linear polyenes-(CH=CH)n-via acid-catalyzed thermal dehydration of polyvinyl alcohol in 9- to 40-µm-thick films of this polymer containing hydrochloric acid, aluminum chloride, and phosphotungstic acid as dehydration catalysts was studied by electronic absorption spectroscopy. The concentration of long-chain ( n ≥ 8) polyenes in films containing phosphotungstic acid is found to monotonically increase with the duration of thermal treatment of films, although the kinetics of this process is independent of film thickness. In films containing hydrochloric acid and aluminum chloride, the formation rate of polyenes with n ≥ 8 rapidly drops as film thickness decreases and the annealing time increases. As a result, at a film thickness of less than 10-12 µm, long-chain polyenes are not formed at all in these films no matter how long thermal duration is. The reason for this behavior is that hydrochloric acid catalyzing polymer dehydration in these films evaporates from the films during thermal treatment, the evaporation rate inversely depending on film thickness.

  1. Bacopa monniera Stabilized Silver Nanoparticles Attenuates Oxidative Stress Induced by Aluminum in Albino Mice.

    PubMed

    Mahitha, B; Deva Prasad Raju, B; Mallikarjuna, K; Durga Mahalakshmi, Ch N; Sushmal, N John

    2015-02-01

    In the recent years usage of nanomedicine plays a promising strategy in the improvement of medical treatment. The ecofriendly synthesized silver nanoparticles has introduced a new opportunity to increase the efficacy of drug by reducing its side effects. In the present study, we investigated the antioxidant property of Bacopa monniera stabilized silver nanoparticles against aluminum induced toxicity in albino mice. Forty male albino mice were randomly divided into five groups. First group was treated as control, second group received aluminum acetate (5 mg/kg b . w), third group received Bacopa monniera extract (5 mg/kg b . w), fourth group received BmSNPs (5 mg/kg b . w), fifth group received aluminum acetate plus BmSNPs. Exposure to aluminum acetate significantly increased lipid peroxidation levels with a significant decrease in the antioxidant enzymes such as superoxide dismutase, catalase and glutathione peroxidase activities in the brain, liver and kidney of mice. Degenerative changes were also observed in brain, liver and kidney of aluminum treated mice. No significant changes in the oxidative stress were observed in the Bacopa monniera and BmSNPs alone treated mice. Whereas, co-administration of BmSNPs to Al treated mice showed a significant decrease in lipid peroxidation levels with a significant increase of SOD, CAT and GPx indicating the antioxidant potential of nanoparticles and in counteracting Al induced oxidative stress and histological response in male albino mice. These findings clearly implicate that BmSNPs are able to eradicate the oxidative stress and prevent the tissue damage in aluminum exposed mice. PMID:26353618

  2. Bacopa monniera Stabilized Silver Nanoparticles Attenuates Oxidative Stress Induced by Aluminum in Albino Mice.

    PubMed

    Mahitha, B; Deva Prasad Raju, B; Mallikarjuna, K; Durga Mahalakshmi, Ch N; Sushmal, N John

    2015-02-01

    In the recent years usage of nanomedicine plays a promising strategy in the improvement of medical treatment. The ecofriendly synthesized silver nanoparticles has introduced a new opportunity to increase the efficacy of drug by reducing its side effects. In the present study, we investigated the antioxidant property of Bacopa monniera stabilized silver nanoparticles against aluminum induced toxicity in albino mice. Forty male albino mice were randomly divided into five groups. First group was treated as control, second group received aluminum acetate (5 mg/kg b . w), third group received Bacopa monniera extract (5 mg/kg b . w), fourth group received BmSNPs (5 mg/kg b . w), fifth group received aluminum acetate plus BmSNPs. Exposure to aluminum acetate significantly increased lipid peroxidation levels with a significant decrease in the antioxidant enzymes such as superoxide dismutase, catalase and glutathione peroxidase activities in the brain, liver and kidney of mice. Degenerative changes were also observed in brain, liver and kidney of aluminum treated mice. No significant changes in the oxidative stress were observed in the Bacopa monniera and BmSNPs alone treated mice. Whereas, co-administration of BmSNPs to Al treated mice showed a significant decrease in lipid peroxidation levels with a significant increase of SOD, CAT and GPx indicating the antioxidant potential of nanoparticles and in counteracting Al induced oxidative stress and histological response in male albino mice. These findings clearly implicate that BmSNPs are able to eradicate the oxidative stress and prevent the tissue damage in aluminum exposed mice.

  3. Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide

    SciTech Connect

    Sinha, Soumyadeep; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-15

    Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide thin films by atomic layer deposition (ALD) in the temperature ranging from 100 to 200 °C. Growth rate of 1.3 Å per ALD cycle is achieved by in-situ quartz crystal microbalance measurements. It is found that the growth rate per ALD cycle is highly dependent on the purging time between the two precursors. Increased purge time results in higher growth rate. Surface limited chemistry during each ALD half cycle is studied by in-situ Fourier transformed infrared vibration spectroscopy. Time of flight secondary ion-mass spectroscopy measurement is used to confirm elemental composition of the deposited films.

  4. Structural properties of a-Si films and their effect on aluminum induced crystallization

    SciTech Connect

    Tankut, Aydin; Ozkol, Engin; Karaman, Mehmet; Turan, Rasit; Canli, Sedat

    2015-10-15

    In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size.

  5. Wetting behavior and drag reduction of superhydrophobic layered double hydroxides films on aluminum

    NASA Astrophysics Data System (ADS)

    Zhang, Haifeng; Yin, Liang; Liu, Xiaowei; Weng, Rui; Wang, Yang; Wu, Zhiwen

    2016-09-01

    We present a novel method to fabricate Zn-Al LDH (layered double hydroxides) film with 3D flower-like micro-and nanostructure on the aluminum foil. The wettability of the Zn-Al LDH film can be easily changed from superhydrophilic to superhydrophobic with a simple chemical modification. The as-prepared superhydrophobic surfaces have water CAs (contact angles) of 165 ± 2°. In order to estimate the drag reduction property of the surface with different adhesion properties, the experimental setup of the liquid/solid friction drag is proposed. The drag reduction ratio for the as-prepared superhydrophobic sample is 20-30% at low velocity. Bearing this in mind, we construct superhydrophobic surfaces that have numerous technical applications in drag reduction field.

  6. [The color of implants of aluminum oxide ceramics].

    PubMed

    Willmann, G

    1990-12-01

    Ceramic implants are manufactured from aluminium oxide ceramics (Al2O3) doped with magnesium oxide (MgO). The yellow or brown discoloration following gamma-sterilization does not constitute a material defect, but rather a property of the material. This chromic effect is explained in the following article. PMID:2078648

  7. Oxidative addition of the C-I bond on aluminum nanoclusters

    NASA Astrophysics Data System (ADS)

    Sengupta, Turbasu; Das, Susanta; Pal, Sourav

    2015-07-01

    Energetics and the in-depth reaction mechanism of the oxidative addition step of the cross-coupling reaction are studied in the framework of density functional theory (DFT) on aluminum nanoclusters. Aluminum metal in its bulk state is totally inactive towards carbon-halogen bond dissociation but selected Al nanoclusters (size ranging from 3 to 20 atoms) have shown a significantly lower activation barrier towards the oxidative addition reaction. The calculated energy barriers are lower than the gold clusters and within a comparable range with the conventional and most versatile Pd catalyst. Further investigations reveal that the activation energies and other reaction parameters are highly sensitive to the geometrical shapes and electronic structures of the clusters rather than their size, imposing the fact that comprehensive studies on aluminum clusters can be beneficial for nanoscience and nanotechnology. To understand the possible reaction mechanism in detail, the reaction pathway is investigated with the ab initio Born Oppenheimer Molecular Dynamics (BOMD) simulation and the Natural Bond Orbital (NBO) analysis. In short, our theoretical study highlights the thermodynamic and kinetic details of C-I bond dissociation on aluminum clusters for future endeavors in cluster chemistry.Energetics and the in-depth reaction mechanism of the oxidative addition step of the cross-coupling reaction are studied in the framework of density functional theory (DFT) on aluminum nanoclusters. Aluminum metal in its bulk state is totally inactive towards carbon-halogen bond dissociation but selected Al nanoclusters (size ranging from 3 to 20 atoms) have shown a significantly lower activation barrier towards the oxidative addition reaction. The calculated energy barriers are lower than the gold clusters and within a comparable range with the conventional and most versatile Pd catalyst. Further investigations reveal that the activation energies and other reaction parameters are highly

  8. Several braze filler metals for joining an oxide-dispersion-strengthened nickel-chromium-aluminum alloy

    NASA Technical Reports Server (NTRS)

    Gyorgak, C. A.

    1975-01-01

    An evaluation was made of five braze filler metals for joining an aluminum-containing oxide dispersion-strengthened (ODS) alloy, TD-NiCrAl. All five braze filler metals evaluated are considered suitable for joining TD-NiCrAl in terms of wettability and flow. Also, the braze alloys appear to be tolerant of slight variations in brazing procedures since joints prepared by three sources using three of the braze filler metals exhibited similar brazing characteristics and essentially equivalent 1100 C stress-rupture properties in a brazed butt-joint configuration. Recommendations are provided for brazing the aluminum-containing ODS alloys.

  9. SOLID-STATE SYNTHESIS AND SOME PROPERTIES OF MAGNESIUM-DOPED COPPER ALUMINUM OXIDES

    SciTech Connect

    Liu, Chang; Ren, Fei; Wang, Hsin; Case, Eldon D; Morelli, Donald

    2010-01-01

    Copper aluminum oxide (CuAlO2) with delafossite structure is a promising candidate for high temperature thermoelectric applications because of its modest band gap, high stability and low cost. We investigate magnesium doping on the aluminum site as a means of producing higher electrical conductivity and optimized Seebeck coefficient. Powder samples were synthesized using solid-state reaction and bulk samples were prepared using both cold-pressing and hot-pressing techniques. Composition analysis, microstructural examination and transport property measurements were performed, and the results suggest that while hot-pressing can achieve high density samples, secondary phases tend to form and lower the performance of the materials.

  10. The oxidation of aluminum at high temperature studied by Thermogravimetric Analysis and Differential Scanning Calorimetry.

    SciTech Connect

    Coker, Eric Nicholas

    2013-10-01

    The oxidation in air of high-purity Al foil was studied as a function of temperature using Thermogravimetric Analysis with Differential Scanning Calorimetry (TGA/DSC). The rate and/or extent of oxidation was found to be a non-linear function of the temperature. Between 650 and 750 ÀC very little oxidation took place; at 850 ÀC oxidation occurred after an induction period, while at 950 ÀC oxidation occurred without an induction period. At oxidation temperatures between 1050 and 1150 ÀC rapid passivation of the surface of the aluminum foil occurred, while at 1250 ÀC and above, an initial rapid mass increase was observed, followed by a more gradual increase in mass. The initial rapid increase was accompanied by a significant exotherm. Cross-sections of oxidized specimens were characterized by scanning electron microscopy (SEM); the observed alumina skin thicknesses correlated qualitatively with the observed mass increases.

  11. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  12. Combined flame and electrodeposition synthesis of energetic coaxial tungsten-oxide/aluminum nanowire arrays.

    PubMed

    Dong, Zhizhong; Al-Sharab, Jafar F; Kear, Bernard H; Tse, Stephen D

    2013-09-11

    A nanostructured thermite composite comprising an array of tungsten-oxide (WO2.9) nanowires (diameters of 20-50 nm and lengths of >10 μm) coated with single-crystal aluminum (thickness of ~16 nm) has been fabricated. The method involves combined flame synthesis of tungsten-oxide nanowires and ionic-liquid electrodeposition of aluminum. The geometry not only presents an avenue to tailor heat-release characteristics due to anisotropic arrangement of fuel and oxidizer but also eliminates or minimizes the presence of an interfacial Al2O3 passivation layer. Upon ignition, the energetic nanocomposite exhibits strong exothermicity, thereby being useful for fundamental study of aluminothermic reactions as well as enhancing combustion characteristics.

  13. Comparison of electromigration failure rates and grain boundary kinetics in aluminum lines and films

    NASA Astrophysics Data System (ADS)

    Hunt, H. Marc

    2000-10-01

    Electromigration failure times for aluminum-1% silicon interconnects, (0.8 mum thick and linewidths of 3--4 mum) were used to develop a self-consistent thermodynamic treatment of the kinetic process controlling the failure rate. The results imply a power law relationship exists between the driving force and the failure rate, rather than the linear relationship predicted by basic electromigration flux theory. Additionally, the rate controlling process is predicted to require the coordinated motion of multiple atoms, rather than that of individual vacancy diffusion. Evolution of the grain structure during electromigration testing was evaluated for interconnects with-and without an impressed current. The grain structure and the behavior of individual grain boundaries for these aluminum films were evaluated by generating images that revealed the individual grains within the aluminum. These images were obtained using a dual beam FEI 620 Focused Ion Beam scanning electron microscope (FIB), which relies on differences in ion channeling between grain orientations to develop contrast in the secondary electron signal due to ion bombardment. Significant microstructural evolution was observed in regions exhibiting typical electromigration induced damage of void nucleation and growth. No significant changes to the basic microstructure of the interconnects was observed in regions away from the damage sites nor in the interconnects without an impressed current. These observations suggest the microstructural evolution was not solely driven by thermal activation, but possessed a contribution from the impressed current or electric field. In each case, the microstructural development resulted in void nucleation and growth. It was concluded, interactions between the applied field and the aluminum's microstructure contributed to localized microstructural evolution that resulted in void nucleation and growth.

  14. Effects of aluminum and extremely low frequency electromagnetic radiation on oxidative stress and memory in brain of mice.

    PubMed

    Deng, Yuanxin; Zhang, Yanwen; Jia, Shujie; Liu, Junkang; Liu, Yanxia; Xu, Weiwei; Liu, Lei

    2013-12-01

    This study was aimed to investigate the effect of aluminum and extremely low-frequency magnetic fields (ELF-MF) on oxidative stress and memory of SPF Kunming mice. Sixty male SPF Kunming mice were divided randomly into four groups: control group, ELF-MF group (2 mT, 4 h/day), load aluminum group (200 mg aluminum/kg, 0.1 ml/10 g), and ELF-MF + aluminum group (2 mT, 4 h/day, 200 mg aluminum/kg). After 8 weeks of treatment, the mice of three experiment groups (ELF-MF group, load aluminum group, and ELF-MF + aluminum group) exhibited firstly the learning memory impairment, appearing that the escaping latency to the platform was prolonged and percentage in the platform quadrant was reduced in the Morris water maze (MWM) task. Secondly are the pathologic abnormalities including neuronal cell loss and overexpression of phosphorylated tau protein in the hippocampus and cerebral cortex. On the other hand, the markers of oxidative stress were determined in mice brain and serum. The results showed a statistically significant decrease in superoxide dismutase activity and increase in the levels of malondialdehyde in the ELF-MF group (P < 0.05 or P < 0.01), load aluminum group (P < 0.01), and ELF-MF + aluminum group (P < 0.01). However, the treatment with ELF-MF + aluminum induced no more damage than ELF-MF and aluminum did, respectively. In conclusion, both aluminum and ELF-MF could impact on learning memory and pro-oxidative function in Kunming mice. However, there was no evidence of any association between ELF-MF exposure with aluminum loading.

  15. Study of the formation process of titanium oxides containing micro arc oxidation film on Mg alloys

    NASA Astrophysics Data System (ADS)

    Song, Yingwei; Dong, Kaihui; Shan, Dayong; Han, En-Hou

    2014-09-01

    A novel micro arc oxidation (MAO) film is developed to protect Mg alloys from corrosion. This film contains plenty of titanium oxides, which exhibits higher chemical stability than traditional MAO films. Especially, the micropores on the surface of the film are in situ sealed during the film formation process instead of the sealing pores post treatment. The film formation process is investigated by the observation of surface and cross-section morphologies and analysis of chemical composition. It is found that the sizes of micropores increase but the quantities decrease with increasing oxidation voltages. The micropores are open in the initial stage of oxidation and then they are sealed gradually. The growth direction of the film takes place change at different oxidation voltages. The elements of F and Ti play a significant role in the film growth process.

  16. Augmentation of aluminum-induced oxidative stress in rat cerebrum by presence of pro-oxidant (graded doses of ethanol) exposure.

    PubMed

    Nayak, Prasunpriya; Sharma, Shiv Bhushan; Chowdary, Nadella Vijaya Subbaraya

    2010-11-01

    Both aluminum and ethanol are pro-oxidants and neurotoxic. Considering the possibilities of co-exposure and sharing mechanisms of producing neurotoxicity, the present study was planned to identify the level of aluminum-induced oxidative stress in altered pro-oxidant (ethanol exposure) status of cerebrum. Male rats were coexposed to aluminum and ethanol for 4 weeks. After the exposure period, cerebral levels of protein, reduced glutathione (GSH), lipid peroxidation (TBARS) were measured. Activities of catalase, superoxide dismutase (SOD), glutathione reductase (GR) and glutathione perioxidase (GPx) of cerebrum were estimated. In most of the cases significant correlations were observed between the alterations and graded ethanol doses, suggesting a dose-dependency in pushing the oxidant equilibrium toward pro-oxidants. Aluminum is found to influence significantly all the studied parameters of oxidative stress. Likewise, ethanol also influenced these parameters significantly, except GR, while the interaction between ethanol and aluminum could significantly influence only the GSH content and GR activity of cerebrum. Present study demonstrate that coexposure of aluminum with pro-oxidant might favor development of aluminum-induced oxidative stress in cerebrum. This observation might be helpful in understanding of mechanism of neurodegenerative disorders and ameliorate them.

  17. Mechanical spectroscopy of nanocrystalline aluminum films: effects of frequency and grain size on internal friction.

    PubMed

    Sosale, Guruprasad; Almecija, Dorothée; Das, Kaushik; Vengallatore, Srikar

    2012-04-20

    Energy dissipation by internal friction is a property of fundamental interest for probing the effects of scale on mechanical behavior in nanocrystalline metallic films and for guiding the use of these materials in the design of high-Q micro/nanomechanical resonators. This paper describes an experimental study to measure the effects of frequency, annealing and grain size on internal friction at room temperature in sputter-deposited nanocrystalline aluminum films with thicknesses ranging from 60 to 120 nm. Internal friction was measured using a single-crystal silicon microcantilever platform that calibrates dissipation against the fundamental limits of thermoelastic damping. Internal friction was a weak function of frequency, reducing only by a factor of two over three decades of frequency (70 Hz to 44 kHz). Annealing led to significant grain growth and the average grain size of 100 nm thick films increased from 90 to 390 nm after annealing for 1 h at 450 (∘)C. This increase in grain size was accompanied by a decrease in internal friction from 0.05 to 0.02. Taken together, these results suggest that grain-boundary sliding, characterized by a spectrum of relaxation times, contributes to internal friction in these films. PMID:22436133

  18. High carrier concentration p-type transparent conducting oxide films

    DOEpatents

    Yan, Yanfa; Zhang, Shengbai

    2005-06-21

    A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

  19. Doping in zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zheng

    Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 1018 to 1.8 x 1020 cm-3, the dominant PL line at 9 K changes from I1 (3.368--3.371 eV), to IDA (3.317--3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that IDA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from GaZn donors paired with Zn-vacancy (VZn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p-type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature TC were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ˜1019 cm -3, indicating a carrier-mediated mechanism for

  20. CW laser compaction of aqueous solution deposited metal oxide films

    SciTech Connect

    Exarhos, G.J.; Dennis, T.

    1997-12-01

    Zirconium dioxide films were spin cast onto silica or silicon substrates from an aqueous solution comprised of the precursor metal nitrate and an organic complexant such as glycine. The hydrated films so derived consist of an amorphous organic phase in which the metal cations and nitrate anions are homogeneously dispersed. Heating to temperatures above 200 {degrees}C leads to film dehydration followed by an auto-catalyzed oxidation reaction whereby the bound nitrate oxidizes the organic matrix leaving behind an intact stoichiometric and crystalline metal oxide film. Films are characterized using AFM, XRD, and optical methods. Transformation processes in these films have been studied in detail by means of spectroscopic ellipsometry and laser induced fluorescence from films doped with a suitable rare earth probe ion such as SM{sup +3}. In the latter case, the measured fluorescence emission spectra are used to identify the hydrated, dehydrated, amorphous and crystalline metal oxide phases which evolve during processing. These transformations also have been induced upon visible CW laser irradiation at fluences in excess of 1 MW/cm{sup 2}. Under these conditions, the film dehydrates and compacts within the footprint of the incident laser beam rendering this region of the film water insoluble. Post irradiation washing of the film with water removes all vestiges of the film outside of the beam footprint suggesting a possible use of this technique for lithography applications. Films subjected to laser irradiation and post irradiation heating have been characterized with respect to thickness, phase composition, crystallite size and optical constants.

  1. p-type conduction in sputtered indium oxide films

    SciTech Connect

    Stankiewicz, Jolanta; Alcala, Rafael; Villuendas, Francisco

    2010-05-10

    We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.

  2. Influence of aluminum oxide on the prebiotic thermal synthesis of Gly-Glu-(Gly-Glu)(n) polymer.

    PubMed

    Leyton, Patricio; Zárate, R Antonio; Fuentes, Sandra; Paipa, Carolina; Gómez-Jeria, Juan S; Leyton, Yessica

    2011-01-01

    The effect of the aluminum oxide on the thermal synthesis of the glycine-glutamic acid (Gly-Glu-(Gly-Glu)(n) polymer is described. The thermal synthesis in the molten state was carried out in the absence and presence of the oxide. In both cases, the vibrational spectra showed characteristic group frequencies corresponding predominantly to a Gly-Glu-(Gly-Glu)(n) sequence in the polymeric structure. The theoretical spectral data support the experimental proposed Gly-Glu-(Gly-Glu)(n) sequence for the polymer. The SEM-EDX characterization of the solid phase involved in the thermal synthesis showed that the aluminum oxide participates as a site for nucleation and growth of the polymer, explaining the increase of 25% efficiency in the presence of aluminum oxide. Electrophoresis data show shorter polypeptide chains in the presence of aluminum oxide.

  3. Polymer-assisted aqueous deposition of metal oxide films

    DOEpatents

    Li, DeQuan; Jia, Quanxi

    2003-07-08

    An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

  4. Effects of oxidative treatments on human hair keratin films.

    PubMed

    Fujii, T; Ito, Y; Watanabe, T; Kawasoe, T

    2012-01-01

    The effects of hydrogen peroxide and commercial bleach on hair and human hair keratin films were examined by protein solubility, scanning electron microscopy (SEM), immunofluorescence microscopy, immunoblotting, and Fourier-transform infrared spectroscopy. Protein solubility in solutions containing urea decreased when the keratin films were treated with hydrogen peroxide or bleach. Oxidative treatments promoted the urea-dependent morphological change by turning films from opaque to transparent in appearance. Immunofluorescence microscopy and immunoblotting showed that the oxidation of amino acids and proteins occurred due to the oxidative treatments, and such occurrence was more evident in the bleach-treated films than in the hydrogen peroxide-treated films. Compared with hair samples, the formation of cysteic acid was more clearly observed in the keratin films after the oxidative treatments.

  5. Effects of oxidative treatments on human hair keratin films.

    PubMed

    Fujii, T; Ito, Y; Watanabe, T; Kawasoe, T

    2012-01-01

    The effects of hydrogen peroxide and commercial bleach on hair and human hair keratin films were examined by protein solubility, scanning electron microscopy (SEM), immunofluorescence microscopy, immunoblotting, and Fourier-transform infrared spectroscopy. Protein solubility in solutions containing urea decreased when the keratin films were treated with hydrogen peroxide or bleach. Oxidative treatments promoted the urea-dependent morphological change by turning films from opaque to transparent in appearance. Immunofluorescence microscopy and immunoblotting showed that the oxidation of amino acids and proteins occurred due to the oxidative treatments, and such occurrence was more evident in the bleach-treated films than in the hydrogen peroxide-treated films. Compared with hair samples, the formation of cysteic acid was more clearly observed in the keratin films after the oxidative treatments. PMID:22487448

  6. Fabrication of SERS-active substrates using silver nanofilm-coated porous anodic aluminum oxide for detection of antibiotics.

    PubMed

    Chen, Jing; Feng, Shaolong; Gao, Fang; Grant, Edward; Xu, Jie; Wang, Shuo; Huang, Qian; Lu, Xiaonan

    2015-04-01

    We have developed a silver nanofilm-coated porous anodic aluminum oxide (AAO) as a surface-enhanced Raman scattering (SERS)-active substrate for the detection of trace level of chloramphenicol, a representative antibiotic in food systems. The ordered aluminum template generated during the synthesis of AAO serves as a patterned matrix on which a coated silver film replicates the patterned AAO matrix to form a 2-dimensional ordered nanostructure. We used atomic force microscopy and scanning electron microscopy images to determine the morphology of this nanosubstrate, and characterized its localized surface plasmon resonance by ultraviolet-visible reflection. We gauged the SERS effect of this nanosubstrate by confocal micro-Raman spectroscopy (782-nm laser), finding a satisfactory and consistent performance with enhancement factors of approximately 2 × 10(4) and a limit of detection for chloramphenicol of 7.5 ppb. We applied principal component analysis to determine the limit of quantification for chloramphenicol of 10 ppb. Using electromagnetic field theory, we developed a detailed mathematical model to explain the mechanism of Raman signal enhancement of this nanosubstrate. With simple sample pretreatment and separation steps, this silver nanofilm-coated AAO substrate could detect 50 ppb chloramphenicol in milk, indicating good potential as a reliable SERS-active substrate for rapid detection of chemical contaminants in agricultural and food products. PMID:25736080

  7. Fabrication of SERS-active substrates using silver nanofilm-coated porous anodic aluminum oxide for detection of antibiotics.

    PubMed

    Chen, Jing; Feng, Shaolong; Gao, Fang; Grant, Edward; Xu, Jie; Wang, Shuo; Huang, Qian; Lu, Xiaonan

    2015-04-01

    We have developed a silver nanofilm-coated porous anodic aluminum oxide (AAO) as a surface-enhanced Raman scattering (SERS)-active substrate for the detection of trace level of chloramphenicol, a representative antibiotic in food systems. The ordered aluminum template generated during the synthesis of AAO serves as a patterned matrix on which a coated silver film replicates the patterned AAO matrix to form a 2-dimensional ordered nanostructure. We used atomic force microscopy and scanning electron microscopy images to determine the morphology of this nanosubstrate, and characterized its localized surface plasmon resonance by ultraviolet-visible reflection. We gauged the SERS effect of this nanosubstrate by confocal micro-Raman spectroscopy (782-nm laser), finding a satisfactory and consistent performance with enhancement factors of approximately 2 × 10(4) and a limit of detection for chloramphenicol of 7.5 ppb. We applied principal component analysis to determine the limit of quantification for chloramphenicol of 10 ppb. Using electromagnetic field theory, we developed a detailed mathematical model to explain the mechanism of Raman signal enhancement of this nanosubstrate. With simple sample pretreatment and separation steps, this silver nanofilm-coated AAO substrate could detect 50 ppb chloramphenicol in milk, indicating good potential as a reliable SERS-active substrate for rapid detection of chemical contaminants in agricultural and food products.

  8. Flexible electrostatic nanogenerator using graphene oxide film

    NASA Astrophysics Data System (ADS)

    Tian, He; Ma, Shuo; Zhao, Hai-Ming; Wu, Can; Ge, Jie; Xie, Dan; Yang, Yi; Ren, Tian-Ling

    2013-09-01

    Recently, graphene oxide (GO) super capacitors with ultra-high energy densities have received significant attention. In addition to their use in energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as energy harvesting. Here, a flexible nanogenerator based on GO film is designed. A multilayer structure Al/PI/GO/PI/ITO is made on a flexible PET substrate. The GO nanogenerator could generate a peak voltage of 2 V with a current of 30 nA upon the repetitive application of a 15 N force with a frequency of 1 Hz. Moreover, the output voltage was increased to 34.4 V upon increasing the frequency of force application to 10 Hz. Compared with control samples, embedding GO film with a release structure into the device could significantly enhance the output voltage from 0.1 V to 2.0 V. The mechanism of our nanogenerator can be explained by an electrostatic effect, which is fundamentally different from that of previously reported piezoelectric and triboelectric generators. In this manuscript, we demonstrate flexible nanogenerators with large-area graphene based materials, which may open up new avenues of research with regard to applications in energy harvesting.Recently, graphene oxide (GO) super capacitors with ultra-high energy densities have received significant attention. In addition to their use in energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as energy harvesting. Here, a flexible nanogenerator based on GO film is designed. A multilayer structure Al/PI/GO/PI/ITO is made on a flexible PET substrate. The GO nanogenerator could generate a peak voltage of 2 V with a current of 30 nA upon the repetitive application of a 15 N force with a frequency of 1 Hz. Moreover, the output voltage was increased to 34.4 V upon increasing the frequency of force application to 10 Hz. Compared with control samples, embedding GO film with a release structure into the device could

  9. Highly Transparent and Flexible Triboelectric Nanogenerators with Subwavelength-Architectured Polydimethylsiloxane by a Nanoporous Anodic Aluminum Oxide Template.

    PubMed

    Dudem, Bhaskar; Ko, Yeong Hwan; Leem, Jung Woo; Lee, Soo Hyun; Yu, Jae Su

    2015-09-23

    Highly transparent and flexible triboelectric nanogenerators (TENGs) were fabricated using the subwavelength-architectured (SWA) polydimethylsiloxane (PDMS) with a nanoporous anodic aluminum oxide (AAO) template as a replica mold. The SWA PDMS could be utilized as a multifunctional film for a triboelectric layer, an antireflection coating, and a self-cleaning surface. The nanopore arrays of AAO were formed by a simple, fast, and cost-effective electrochemical oxidation process of aluminum, which is relatively impressive for fabrication of the TENG device. For electrical contacts, the SWA PDMS was laminated on the indium tin oxide (ITO)-coated polyethylene terephthalate (PET) as a bottom electrode, and the bare ITO-coated PET (i.e., ITO/PET) was used for the top electrode. Compared to the ITO/PET, the SWA PDMS on the ITO/PET improved the transmittance from 80.5 to 83% in the visible wavelength region and also had high transmittances of >85% at wavelengths of 430-455 nm. The SWA PDMS also exhibited the hydrophobic surface with a water contact angle (θCA) of ∼115°, which can be useful for self-cleaning applications. The average transmittance (Tavg) of the entire TENG device was observed to be ∼70% over a broad wavelength range. At an external pushing frequency of 0.5 Hz, for the TENG device with the ITO top electrode, open-circuit voltage (VOC) and short-circuit current (ISC) values of ∼3.8 V and ∼0.8 μA were obtained instantaneously, respectively, which were higher than those (i.e., VOC ≈ 2.2 V, and ISC ≈ 0.4 μA) of the TENG device with a gold top electrode. The effect of external pushing force and frequency on the output device performance of the TENGs was investigated, including the device robustness. A theoretical optical analysis of SWA PDMS was also performed. PMID:26301328

  10. Highly Transparent and Flexible Triboelectric Nanogenerators with Subwavelength-Architectured Polydimethylsiloxane by a Nanoporous Anodic Aluminum Oxide Template.

    PubMed

    Dudem, Bhaskar; Ko, Yeong Hwan; Leem, Jung Woo; Lee, Soo Hyun; Yu, Jae Su

    2015-09-23

    Highly transparent and flexible triboelectric nanogenerators (TENGs) were fabricated using the subwavelength-architectured (SWA) polydimethylsiloxane (PDMS) with a nanoporous anodic aluminum oxide (AAO) template as a replica mold. The SWA PDMS could be utilized as a multifunctional film for a triboelectric layer, an antireflection coating, and a self-cleaning surface. The nanopore arrays of AAO were formed by a simple, fast, and cost-effective electrochemical oxidation process of aluminum, which is relatively impressive for fabrication of the TENG device. For electrical contacts, the SWA PDMS was laminated on the indium tin oxide (ITO)-coated polyethylene terephthalate (PET) as a bottom electrode, and the bare ITO-coated PET (i.e., ITO/PET) was used for the top electrode. Compared to the ITO/PET, the SWA PDMS on the ITO/PET improved the transmittance from 80.5 to 83% in the visible wavelength region and also had high transmittances of >85% at wavelengths of 430-455 nm. The SWA PDMS also exhibited the hydrophobic surface with a water contact angle (θCA) of ∼115°, which can be useful for self-cleaning applications. The average transmittance (Tavg) of the entire TENG device was observed to be ∼70% over a broad wavelength range. At an external pushing frequency of 0.5 Hz, for the TENG device with the ITO top electrode, open-circuit voltage (VOC) and short-circuit current (ISC) values of ∼3.8 V and ∼0.8 μA were obtained instantaneously, respectively, which were higher than those (i.e., VOC ≈ 2.2 V, and ISC ≈ 0.4 μA) of the TENG device with a gold top electrode. The effect of external pushing force and frequency on the output device performance of the TENGs was investigated, including the device robustness. A theoretical optical analysis of SWA PDMS was also performed.

  11. The Relationship Between Ambiently Formed Oxides and the Tribological Behavior of Aluminum Bronze

    NASA Astrophysics Data System (ADS)

    Poggie, Robert Andre

    1992-01-01

    The relationship between ambiently formed oxides and the tribological behavior of aluminum bronze has been investigated. As the aluminum content of Al-bronze increases from zero to eight weight percent, the mechanical properties, oxidation kinetics, and tribological behavior of the alloy are significantly affected. This research has shown that the friction and wear behavior of Al-bronze depends primarily on the composition and mechanical stability of the ambiently formed surface oxide. Adhesive transfer of Al-bronze to the slider counterfaces increased with increasing aluminum content which corresponded to increased damage to the alloy surfaces and the formation of wear debris. The majority of surface damage (plastic deformation and galling) of the Cu-4 and 6 w/o Al alloys occurred during the initial portion (run-in) of wear testing. The Cu-1 w/o Al alloy wore via an oxidative wear mechanism throughout the course of wear testing. Galling, severe plastic deformation, the formation of metallic wear debris, and adhesive transfer were not observed for the Cu-1 AL w/o alloy. XPS and SEM analysis of the Cu-1 w/o Al alloy showed the worn surfaces to consist of a smooth and adherent Cu_2O layer. Long term ambient oxidation of the Cu-4 and 6 w/o Al alloys resulted in a layered oxide structure with Cu(OH)_2 at the surface followed by CuO, Cu_2O, Al_2O_3, and, lastly, the metallic substrate. The differences in elastic moduli, crystal structures, and composition between the copper alloy and the Al _2O_3 enriched surface oxide decreases the mechanical integrity of the surface oxide. The tensile and compressive stresses generated at the surface of the Al-bronze samples via frictional interaction with the opposing slider is sufficient to cause a large differential in strain across the oxide-metal interface and disruption of the brittle, Al_2O _3 enriched surface oxide. The exposed metal immediately repassivates itself by reforming a surface oxide or forming an adhesive bond with

  12. Pulsed organometallic beam epitaxy of complex oxide films

    NASA Astrophysics Data System (ADS)

    Duray, S. J.; Buchholz, D. B.; Song, S. N.; Richeson, D. S.; Ketterson, J. B.; Marks, T. J.; Chang, R. P. H.

    1991-09-01

    The results are reported of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure and low substrate temperature using organometallic precursors in an oxygen plasma environment. The results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures.

  13. Aluminum Induces Oxidative Stress Genes in Arabidopsis thaliana1

    PubMed Central

    Richards, Keith D.; Schott, Eric J.; Sharma, Yogesh K.; Davis, Keith R.; Gardner, Richard C.

    1998-01-01

    Changes in gene expression induced by toxic levels of Al were characterized to investigate the nature of Al stress. A cDNA library was constructed from Arabidopsis thaliana seedlings treated with Al for 2 h. We identified five cDNA clones that showed a transient induction of their mRNA levels, four cDNA clones that showed a longer induction period, and two down-regulated genes. Expression of the four long-term-induced genes remained at elevated levels for at least 48 h. The genes encoded peroxidase, glutathione-S-transferase, blue copper-binding protein, and a protein homologous to the reticuline:oxygen oxidoreductase enzyme. Three of these genes are known to be induced by oxidative stresses and the fourth is induced by pathogen treatment. Another oxidative stress gene, superoxide dismutase, and a gene for Bowman-Birk protease inhibitor were also induced by Al in A. thaliana. These results suggested that Al treatment of Arabidopsis induces oxidative stress. In confirmation of this hypothesis, three of four genes induced by Al stress in A. thaliana were also shown to be induced by ozone. Our results demonstrate that oxidative stress is an important component of the plant's reaction to toxic levels of Al. PMID:9449849

  14. Solution-based deposition of ultrathin metal oxide films on metal and superconductor surfaces

    NASA Astrophysics Data System (ADS)

    Westwood, Glenn

    Solution chemical methods were used to deposit ultrathin metal oxide films on metal and superconductor surfaces. Platinum-molybdenum oxide films were deposited by spontaneous adsorption and electrodeposition of hexamolybdoplatinate, PtMO6O248-. Spectroscopic characterization by 17O and 195Pt NMR showed that the PtMo6O248- anion is stable in aqueous solution below pH 4. The interaction of this solution stable anion with Au and Ag was characterized by in situ scanning tunneling microscopy, x-ray photoelectron spectroscopy, and cyclic voltammetry. The anion was partially reduced upon adsorption on Ag, but spontaneously adsorbed on Au to form an amorphous surface phase. The electrodeposition of hexamolybdoplatinate on Au electrodes resulted in an electrode surface that was different from the spontaneously adsorbed species, in terms of composition, voltammetry, and reactivity. Cyclic voltammetry was also used to compare the reactivity of these materials for the electrooxidation of methanol. Ultrathin zirconia films were deposited on YBa2Cu3O 7-delta by alternating exposures to tetra n-propyl zirconate, Zr4(OPrn)16, and H2O in n-propanol. Physical and chemical characterization of these films was done by x-ray photoelectron spectroscopy, atomic force microscopy, and cross-section transmission electron microscopy. The zirconia films were determined to be ultrathin (<10 nm) and highly conformal to the surface of YBa2Cu3O7-delta. Metal-insulator-superconductor tunnel junctions fabricated in this fashion were characterized by current-voltage and conductivity-voltage measurements. Solution deposition from Zr4(OPrn) 16 was also used to deposit ultrathin zirconia films on gold, silver, and aluminum surfaces. X-ray photoelectron spectroscopy and atomic force microscopy were used to compare the physical properties of these films. Electrical measurements showed that zirconia films on Ag and Au are not insulating, but aluminum-zirconia-aluminum capacitors fabricated by this method

  15. Modeling of oxidation of aluminum nanoparticles by using Cabrera Mott Model

    NASA Astrophysics Data System (ADS)

    Ramazanova, Zamart; Zyskin, Maxim; Martirosyan, Karen

    2012-10-01

    Our research focuses on modeling new Nanoenergetic Gas-Generator (NGG) formulations that rapidly release a large amount of gaseous products and generates shock and pressure waves. Nanoenergetic thermite reagents include mixtures of Al and metal oxides such as bismuth trioxide and iodine pentoxide. The research problem is considered a spherically symmetric case and used the Cabrera Mott oxidation model to describe the kinetics of oxide growth on spherical Al nanoparticles for evaluating reaction time which a process of the reaction with oxidizer happens on the outer part of oxide layer of aluminum ions are getting in contact with an oxidizing agent and react. We assumed that a ball of Al of radius 20 to 50 nm is covered by a thin oxide layer 2-4 nm and is surrounded by abundant amount of oxygen stored by oxidizers. The ball is rapidly heated up to ignition temperature to initiate self-sustaining oxidation reaction. As a result highly exothermic reaction is generated. In the oxide layer of excess concentrations of electrons and ions are dependent on the electric field potential with the corresponding of the Gibbs factors and that it conducts to the solution of a nonlinear Poisson equation for the electric field potential in a moving boundary domain. Motion of the boundary is determined by the gradient of a solution on the boundary. We investigated oxidation model numerically, using the COMSOL software utilizing finite element analysis. The computing results demonstrate that oxidation rate increases with the decreasing particle radius.

  16. Zinc release from atomic layer deposited zinc oxide thin films and its antibacterial effect on Escherichia coli

    NASA Astrophysics Data System (ADS)

    Kääriäinen, M.-L.; Weiss, C. K.; Ritz, S.; Pütz, S.; Cameron, D. C.; Mailänder, V.; Landfester, K.

    2013-12-01

    Zinc oxide films have been grown by atomic layer deposition (ALD) at different reaction temperatures and in various thicknesses. Zinc-ion release has been examined from the ZnO films in water and in phosphate buffered saline solution (PBS). Additionally, the antibacterial effect has been studied on Escherichia coli. The thickness of the ZnO film or its crystal orientation did not affect the rate of dissolution. ALD grown aluminum oxide films were deposited on top of the ZnO films and they acted as an effective barrier against zinc dissolution. The bacteriostatic effect was not dependent on the film thickness but both 45 nm and 280 nm thick ZnO films significantly reduced bacterial attachment and growth in dark conditions by 99.7% and 99.5%, respectively. The results indicated that photoirradiation is not required for to enhance antibacterial properties of inorganic films and that the elution of zinc ions is probably responsible for the antibacterial properties of the ZnO films. The duration of the antibacterial effect of ZnO can be controlled by accurate control of the film thickness, which is a feature of ALD, and the onset of the antibacterial effect can be delayed by a time which can be adjusted by controlling the thickness of the Al2O3 blocking layer. This gives the possibility of obtaining dual antibacterial release profiles through a nanolaminate structure of these two materials.

  17. Molecular layer deposition of aluminum alkoxide polymer films using trimethylaluminum and glycidol.

    PubMed

    Lee, Younghee; Yoon, Byunghoon; Cavanagh, Andrew S; George, Steven M

    2011-12-20

    Molecular layer deposition (MLD) of aluminum alkoxide polymer films was examined using trimethlyaluminum (TMA) and glycidol (GLY) as the reactants. Glycidol is a high vapor pressure heterobifunctional reactant with both hydroxyl and epoxy chemical functionalites. These two different functionalities help avoid "double reactions" that are common with homobifuctional reactants. A variety of techniques, including in situ Fourier transform infrared (FTIR) spectroscopy and quartz crystal microbalance (QCM) measurements, were employed to study the film growth. FTIR measurements at 100 and 125 °C observed the selective reaction of the GLY hydroxyl group with the AlCH(3) surface species during GLY exposure. Epoxy ring-opening and methyl transfer from TMA to the surface epoxy species were then monitored during TMA exposure. This epoxy ring-opening reaction is dependent on strong Lewis acid-base interactions between aluminum and oxygen. The QCM experiments observed linear growth with self-limiting surface reactions at 100-175 °C under certain growth conditions. With a sufficient purge time of 20 s after TMA and GLY exposures at 125 °C, the mass gain per cycle (MGPC) was 19.8 ng/cm(2)-cycle. The individual mass gains after the TMA and GLY exposures were also consistent with a TMA/GLY stoichiometry of 4:3 in the MLD film. This TMA/GLY stoichiometry suggests the presence of Al(2)O(2) dimeric core species. The MLD films resulting from these TMA and GLY exposures also evolved with annealing temperature to form thinner conformal porous films with increased density. Non-self-limiting growth was a problem at shorter purge times and lower temperatures. With shorter purge times of 10 s at 125 °C, the MPGC increased dramatically to 134 ng/cm(2)-cycle. The individual mass gains after the TMA and GLY exposures in the CVD regime were consistent with a TMA/GLY stoichiometry of 1:1. The MGPC decreased progressively versus purge time. This behavior was attributed to the removal of

  18. Film adhesive enhances neutron radiographic images

    NASA Technical Reports Server (NTRS)

    Reed, M. W.

    1978-01-01

    Resolution of neutron radiographic images of thermally conductive film is increased by replacing approximately 5 percent of aluminum powder, which provides thermal conductivity, with gadolinium oxide. Oxide is also chemically stable.

  19. Amorphous Vanadium Oxide/Carbon Composite Positive Electrode for Rechargeable Aluminum Battery.

    PubMed

    Chiku, Masanobu; Takeda, Hiroki; Matsumura, Shota; Higuchi, Eiji; Inoue, Hiroshi

    2015-11-11

    Amorphous vanadium oxide/carbon composite (V2O5/C) was first applied to the positive electrode active material for rechargeable aluminum batteries. Electrochemical properties of V2O5/C were investigated by cyclic voltammetry and charge-discharge tests. Reversible reduction/oxidation peaks were observed for the V2O5/C electrode and the rechargeable aluminum cell showed the maximum discharge capacity over 200 mAh g(-1) in the first discharging. The XPS analyses after discharging and the following charging exhibited that the redox of vanadium ion in the V2O5/C active material occurred during discharging and charging, and the average valence of V changed between 4.14 and 4.85.

  20. Fabrication of polymeric nano-batteries array using anodic aluminum oxide templates.

    PubMed

    Zhao, Qiang; Cui, Xiaoli; Chen, Ling; Liu, Ling; Sun, Zhenkun; Jiang, Zhiyu

    2009-02-01

    Rechargeable nano-batteries were fabricated in the array pores of anodic aluminum oxide (AAO) template, combining template method and electrochemical method. The battery consisted of electropolymerized PPy electrode, porous TiO2 separator, and chemically polymerized PAn electrode was fabricated in the array pores of two-step anodizing aluminum oxide (AAO) membrane, based on three-step assembling method. It performs typical electrochemical battery behavior with good charge-discharge ability, and presents a capacity of 25 nAs. AFM results show the hexagonal array of nano-batteries' top side. The nano-battery may be a promising device for the development of Micro-Electro-Mechanical Systems (MEMS), and Nano-Electro-Mechanical Systems (NEMS).

  1. Magnesium Recycling of Partially Oxidized, Mixed Magnesium-Aluminum Scrap through Combined Refining and Solid Oxide Membrane Electrolysis Processes

    SciTech Connect

    Xiaofei Guan; Peter A. Zink; Uday B. Pal; Adam C. Powell

    2012-01-01

    Pure magnesium (Mg) is recycled from 19g of partially oxidized 50.5wt.% Mg-Aluminum (Al) alloy. During the refining process, potentiodynamic scans (PDS) were performed to determine the electrorefining potential for magnesium. The PDS show that the electrorefining potential increases over time as the magnesium content inside the Mg-Al scrap decreases. Up to 100% percent of magnesium is refined from the Mg-Al scrap by a novel refining process of dissolving magnesium and its oxide into a flux followed by vapor phase removal of dissolved magnesium and subsequently condensing the magnesium vapor. The solid oxide membrane (SOM) electrolysis process is employed in the refining system to enable additional recycling of magnesium from magnesium oxide (MgO) in the partially oxidized Mg-Al scrap. The combination of the refining and SOM processes yields 7.4g of pure magnesium.

  2. Magnesium Recycling of Partially Oxidized, Mixed Magnesium-Aluminum Scrap Through Combined Refining and Solid Oxide Membrane (SOM) Electrolysis Processes

    SciTech Connect

    Guan, Xiaofei; Zink, Peter; Pal, Uday

    2012-03-11

    Pure magnesium (Mg) is recycled from 19g of partially oxidized 50.5wt.%Mg-Aluminum (Al) alloy. During the refining process, potentiodynamic scans (PDS) were performed to determine the electrorefining potential for magnesium. The PDS show that the electrorefining potential increases over time as the Mg content inside the Mg-Al scrap decreases. Up to 100% percent of magnesium is refined from the Mg-Al scrap by a novel refining process of dissolving magnesium and its oxide into a flux followed by vapor phase removal of dissolved magnesium and subsequently condensing the magnesium vapors in a separate condenser. The solid oxide membrane (SOM) electrolysis process is employed in the refining system to enable additional recycling of magnesium from magnesium oxide (MgO) in the partially oxidized Mg-Al scrap. The combination of the refining and SOM processes yields 7.4g of pure magnesium; could not collect and weigh all of the magnesium recovered.

  3. Enhanced adsorptive removal of p-nitrophenol from water by aluminum metal-organic framework/reduced graphene oxide composite.

    PubMed

    Wu, Zhibin; Yuan, Xingzhong; Zhong, Hua; Wang, Hou; Zeng, Guangming; Chen, Xiaohong; Wang, Hui; Zhang, Lei; Shao, Jianguang

    2016-01-01

    In this study, the composite of aluminum metal-organic framework MIL-68(Al) and reduced graphene oxide (MA/RG) was synthesized via a one-step solvothermal method, and their performances for p-nitrophenol (PNP) adsorption from aqueous solution were systematically investigated. The introduction of reduced graphene oxide (RG) into MIL-68(Al) (MA) significantly changes the morphologies of the MA and increases the surface area. The MA/RG-15% prepared at RG-to-MA mass ratio of 15% shows a PNP uptake rate 64% and 123% higher than MIL-68(Al) and reduced graphene oxide (RG), respectively. The hydrogen bond and π - π dispersion were considered to be the major driving force for the spontaneous and endothermic adsorption process for PNP removal. The adsorption kinetics, which was controlled by film-diffusion and intra-particle diffusion, was greatly influenced by solution pH, ionic strength, temperature and initial PNP concentration. The adsorption kinetics and isotherms can be well delineated using pseudo-second-order and Langmuir equations, respectively. The presence of phenol or isomeric nitrophenols in the solution had minimal influence on PNP adsorption by reusable MA/RG composite. PMID:27181188

  4. Effect of conditions of thermal treatment on the porous structure of an aluminum oxide-containing nanofibrous aerogel

    NASA Astrophysics Data System (ADS)

    Markova, E. B.; Krasil'nikova, O. K.; Grankina, T. Yu.; Serov, Yu. M.

    2016-08-01

    The effect the conditions of thermal treatment have on a specific surface and the number of primary adsorption centers is studied. The relationship between changing adsorption characteristics and changes in the structure of nanofibrous aluminum oxide is considered.

  5. Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

    SciTech Connect

    Belkerk, B. E.; Bensalem, S.; Soussou, A.; Carette, M.; Djouadi, M. A.; Scudeller, Y.; Al Brithen, H.

    2014-12-01

    In this paper, we report on investigation concerning the substrate-dependent thermal conductivity (k) of Aluminum Nitride (AlN) thin-films processed at low temperature by reactive magnetron sputtering. The thermal conductivity of AlN films grown at low temperature (<200 °C) on single-crystal silicon (Si) and amorphous silicon nitride (SiN) with thicknesses ranging from 100 nm to 4000 nm was measured with the transient hot-strip technique. The k values for AlN films on SiN were found significantly lower than those on Silicon consistently with their microstructures revealed by X-ray diffraction, high resolution scanning electron microscopy, and transmission electron microscopy. The change in k was due to the thermal boundary resistance found to be equal to 10 × 10{sup −9} Km{sup 2}W{sup −1} on SiN against 3.5 × 10{sup −9} Km{sup 2}W{sup −1} on Si. However, the intrinsic thermal conductivity was determined with a value as high as 200 Wm{sup −1}K{sup −1} whatever the substrate.

  6. The effect of aging and surface modification on the mechanical properties of dense aluminum oxide.

    PubMed

    Cook, S D; Weinberg, L A

    1984-01-01

    The effect of in vivo aging and surface texturing on the mechanical properties of dense aluminum oxide were studied. The modulus of rupture and Weibull modulus were determined in air and Ringer's solution using a 3-point bend test. The results showed that the in vivo environment sealed off microcracks either chemically or by tissue ingrowth which strengthened the alumina. The surface modification, however, tended to create more microcracks and stress concentrations at the surface indentations which tended to weaken the alumina.

  7. Surface conductivity of the single crystal aluminum oxide in vacuum and caesium vapors

    SciTech Connect

    Vasilchenko, A.V.; Izhvanov, O.L.

    1996-03-01

    Results of measurements of surface conductivity of single-crystal aluminum oxide samples in vacuum and cesium vapors at T=620{endash}830 K and P{sub Cs}=0.13{endash}2 Pa are shown in the paper. Analysis of caesium vapor influence is carried out and ultimate characteristics of samples conductivity under operation conditions in thermionic nuclear power system (NPP) TFE are estimated. {copyright} {ital 1996 American Institute of Physics.}

  8. Energy dependence of the trapping of uranium atoms by aluminum oxide surfaces

    NASA Technical Reports Server (NTRS)

    Librecht, K. G.

    1979-01-01

    The energy dependence of the trapping probability for sputtered U-235 atoms striking an oxidized aluminum collector surface at energies between 1 eV and 184 eV was measured. At the lowest energies, approximately 10% of the uranium atoms are not trapped, while above 10 eV essentially all of them stick. Trapping probabilities averaged over the sputtered energy distribution for uranium incident on gold and mica are also presented.

  9. Effects of additives on volume change on melting, surface tension, and viscosity of liquid aluminum oxide

    NASA Technical Reports Server (NTRS)

    Bates, J. L.; Rasmussen, J. J.

    1972-01-01

    The effects of various oxide additives on the volume change on melting, the surface tension, and the viscosity of liquid Al2O3 were studied. Additives of Sm2O3, MgO, and Y2O3 which form solid solutions, compounds, and multiphase solids with Al2O3 were studied. A review of the property data for Al2O3 and Al2O3 containing oxide additives is presented. Oxide additives to Al2O3 reduce the volume change on melting and with the exception of SiO2 lower the viscosity; surface tensions change with oxide additives, but changes vary with different container material. Viscosity and volume change on melting appeared to be significantly more important for studying the properties of liquid oxides than surface tension. Supercooling of 270 K of yttrium aluminum garnet was observed.

  10. Properties of aluminum-fluoride catalysts prepared by the fluoridation of aluminum oxide with trifluoromethane

    SciTech Connect

    McVicker, G.B.; Kim, C.J.; Eggert, J.J.

    1983-04-01

    High-purity AlF/sub 3/ has been prepared by allowing ..gamma..-Al/sub 2/O/sub 3/ to react with gaseous trifluoromethane at 670-770 K under 101 kPa total pressure. The use of gaseous trifluoromethane is a new, general method for preparing metal fluorides from metal oxides. AlF/sub 3/ prepared using this procedure retained the physical form of the starting ..gamma..-Al/sub 2/O/sub 3/. A 1/16-in. ..gamma..-Al/sub 2/O/sub 3/ extrudate, for example, yielded an AlF/sub 3/ extrudate with comparable physical dimensions and crush strengths. X-Ray diffraction, BET surface area, pore volume, and surface acidity measurements were employed to characterize various AlF/sub 3/ samples. Significant decreases in surface area and pore volume as well as surface acidity occurred upon increasing the concentration of AlF/sub 3/ from 90 to 100%. This behavior presumably results from the fluoridation of residual ..gamma..-Al/sub 2/O/sub 3/. AlF/sub 3/ extrudates were utilized as supports for Pt and Pd catalysts. Specific benzene hydrogenation activities of these catalysts are comparable to those of Pt and Pd on ..gamma..-Al/sub 2/O/sub 3/. In a unique application, Pd/AlF/sub 3/ was used to hydrogenate m-diethylbenzene in superacid (HF/TaF/sub 5/) solution.

  11. Oxidation behavior of nickel-chromium-aluminum-yttrium - Magnesium oxide and nickel-chromium-aluminum-yttrium - zirconate type of cermets

    NASA Technical Reports Server (NTRS)

    Zaplatynsky, I.

    1976-01-01

    The 1100 and 1200 C cyclic oxidation resistance of dense Ni-Cr-Al-Y - MgO, Ni-Cr-Al-Y - CaZrO3, Ni-Cr-Al-Y - SrZrO3, Ni-Cr-Al-Y - MgZro3 cermets and a 70 percent dense Ni-Cr-Al-Y developmental material was determined. The cermets contained 60 and 50 volume percent of Ni-Cr-Al-Y which formed a matrix with the oxide particles imbedded in it. The cermets containing MgO were superior to cermets based on zirconates and to the porous Ni-Cr-Al-Y material.

  12. Surface scanning inspection system particle detection dependence on aluminum film morphology

    NASA Astrophysics Data System (ADS)

    Prater, Walter; Tran, Natalie; McGarvey, Steve

    2012-03-01

    Physical vapor deposition (PVD) aluminum films present unique challenges when detecting particulate defects with a Surface Scanning Inspection System (SSIS). Aluminum (Al) films 4500Å thick were deposited on 300mm particle grade bare Si wafers at two temperatures using a Novellus Systems INOVA® NExT,.. Film surface roughness and morphology measurements were performed using a Veeco Vx310® atomic force microscope (AFM). AFM characterization found the high deposition temperature (TD) Al roughness (Root Mean Square 16.5 nm) to be five-times rougher than the low-TD Al roughness (rms 3.7 nm). High-TD Al had grooves at the grain boundaries that were measured to be 20 to 80 nm deep. Scanning electron microscopy (SEM) examination, with a Hitachi RS6000 defect review SEM, confirmed the presence of pronounced grain grooves. SEM images established that the low-TD filmed wafers have fine grains (0.1 to 0.3 um diameter) and the high-TD film wafers have fifty-times larger equiaxed plateletshape grains (5 to 15 um diameter). Calibrated Poly-Styrene Latex (PSL) spheres ranging in size from 90 nm to 1 μm were deposited in circular patterns on the wafers using an aerosol deposition chamber. PSL sphere depositions at each spot were controlled to yield 2000 to 5000 counts. A Hitachi LS9100® dark field full wafer SSIS was used to experimentally determine the relationship of the PSL sphere scattered light intensity with S-polarized light, a measure of scattering cross-section, with respect to the calibrated PSL sphere diameter. Comparison of the SSIS scattered light versus PSL spot size calibration curves shows two distinct differences. Scattering cross-section (intensity) of the PSL spheres increased on the low-TD Al film with smooth surface roughness and the low-TD Al film defect detection sensitivity was 126 nm compared to 200 nm for the rougher high- TD Al film. This can be explained by the higher signal to noise attributed to the smooth low-TD Al. Dark field defect detection on

  13. Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Ma, Dong-Ge

    2010-01-01

    A nonvolatile memory effect was observed in an organic thin-film transistor by introducing a Boating gate structure. The Boating gate was composed of an Al film in a thickness of nanometers, which was thermally deposited on a SiO2 insulator and exposed to air to spontaneously oxidize. It can be seen that the transistors exhibit significant hysteresis behaviors and storage circles in current-voltage characteristics in the dark and under illumination, indicating that the transistors may act as a nonvolatile memory element. The operational mechanism is discussed in the cases of dark and illumination via charge trapping by the Al floating gate.

  14. Amorphous tin-cadmium oxide films and the production thereof

    SciTech Connect

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  15. Tunneling Spectroscopy Studies of Urea, Thiourea, and Selected Phosphonate Molecules Adsorbed on Aluminum Oxide

    NASA Astrophysics Data System (ADS)

    Crowder, Charles D.

    Experimental and calculated inelastic electron tunneling intensities were compared for several of the vibrational modes of thiourea adsorbed on aluminum oxide. The partial charge model of Kirtley, Scalapino, and Hansma was used to compute the theoretical intensities of each mode. The required partial charges were determined using a method developed by Momany. Essentially, the Coulomb potential resulting from point charges located at atom sites was fitted to the quantum mechanical electrostatic potential of a molecule calculated from Hartree-Fock theory. The effect of a vibrational mode pattern on the electrostatic potential of a molecule was investigated. This effect could not be acceptably modeled with a single point charge located on each atom, so one charge was used to represent the positive nucleus of each atom and a second charge was used to represent the valence cloud. The valence charge was allowed to move independently of the nuclear charge during a molecular vibration, and the motions of the two charges were found to be very different for hydrogen atoms. This model gave very reasonable agreement between the theoretical and observed relative intensities for the in plane vibrational modes of thiourea. An acceptable set of out of plane force constants could not be found. This caused problems in the interpretation of the out of plane relative intensities. Based on the in plane modes, it was concluded that thiourea bonded to aluminum oxide with the sulfur atom near the oxide and the sulfur-carbon bond perpendicular to the aluminum oxide surface. Quantum mechanical electrostatic potentials were also calculated for urea, phosphoric acid (PA), methylphosphonic acid (MPA), hydroxymethylphosphonic acid (HMP), and nitrotrismethylphosphonic acid (NTMP). Electron tunneling spectra were taken for PA, HMP and NTMP, and the observed frequencies were compared to values obtained from Fourier transform infrared, infrared and Raman spectroscopy. Upward shifts in the P=O and P

  16. Role of Exogenous Melatonin on Cell Proliferation and Oxidant/Antioxidant System in Aluminum-Induced Renal Toxicity.

    PubMed

    Karabulut-Bulan, Omur; Bayrak, Bertan Boran; Arda-Pirincci, Pelin; Sarikaya-Unal, Guner; Us, Huseyin; Yanardag, Refiye

    2015-11-01

    Aluminum has toxic potential on humans and animals when it accumulates in various tissues. It was shown in a number of studies that aluminum causes oxidative stress by free radical formation and lipid peroxidation in tissues and thus may cause damage in target organs. Although there are numerous studies investigating aluminum toxicity, biochemical mechanisms of the damage caused by aluminum have yet to be explained. Melatonin produced by pineal gland was shown to be an effective antioxidant. Since kidneys are target organs for aluminum accumulation and toxicity, we have studied the role of melatonin against aluminum-induced renal toxicity in rats. Wistar albino rats were divided into five groups. Group I served as control, and received only physiological saline; group II served as positive control for melatonin, and received ethanol and physiological saline; group III received melatonin (10 mg/kg); group IV received aluminum sulfate (5 mg/kg) and group V received aluminum sulfate and melatonin (in the same dose), injected three times a week for 1 month. Administration of aluminum caused degenerative changes in renal tissues, such as increase in metallothionein immunoreactivity and decrease in cell proliferation. Moreover, uric acid and lipid peroxidation levels and xanthine oxidase activity increased, while glutathione, catalase, superoxide dismutase, paraoxonase 1, glucose-6-phosphate dehydrogenase, and sodium potassium ATPase activities decreased. Administration of melatonin mostly prevented these symptoms. Results showed that melatonin is a potential beneficial agent for reducing damage in aluminum-induced renal toxicity.

  17. Microstructure damage of thin aluminum films by irradiation with alpha particles and fission fragments

    SciTech Connect

    Sadi, S.; Paulenova, A.; Loveland, W.D.; Watson, P.R.

    2007-07-01

    The atomic force microscopy (AFM) has been used to study the microstructure damage of thin aluminum film surfaces induced by bombardment of alpha particles and fission fragments from {sup 252}Cf source. Different types of defects (dislocations lines, loops, voids, and blisters) and their complex morphologies appeared under both the beam of alpha particles and a mix of alpha particles and fission fragments. The first surface damage became clearly visible only after 250 hr irradiation of a mix of alpha particles and fission fragments (8.65 x 10{sup 8} ff/cm{sup 2} and 1.36 x 10{sup 10} {alpha}/cm{sup 2}). The number of voids and dislocation lines created on the aluminum surface were (3.8 {+-} 0.8) x 10{sup 7} cm{sup -2} and (2.1 {+-} 0.8) x 10{sup 6} cm{sup -2}, respectively. Single blisters were observed with the mean diameter of (933 {+-} 22) nm and the mean height of (102 {+-} 15) nm. The first ellipsoidal dislocation loops appeared at the fluence of (1.03 x 10{sup 9} ff/cm{sup 2} and 1.62 x 10{sup 10} {alpha}/cm{sup 2}). However, these ellipsoidal loops were not seen with low energetic alpha particles at the same fluence. Our results suggest that the fission fragments might maximize large voids and dislocations and increase the degradation in depth resolution. (authors)

  18. Systematic review of potential health risks posed by pharmaceutical, occupational and consumer exposures to metallic and nanoscale aluminum, aluminum oxides, aluminum hydroxide and its soluble salts.

    PubMed

    Willhite, Calvin C; Karyakina, Nataliya A; Yokel, Robert A; Yenugadhati, Nagarajkumar; Wisniewski, Thomas M; Arnold, Ian M F; Momoli, Franco; Krewski, Daniel

    2014-10-01

    oxidative damage that leads to intrinsic apoptosis. In contrast, the toxicity of the insoluble Al oxides depends primarily on their behavior as particulates. Aluminum has been held responsible for human morbidity and mortality, but there is no consistent and convincing evidence to associate the Al found in food and drinking water at the doses and chemical forms presently consumed by people living in North America and Western Europe with increased risk for Alzheimer's disease (AD). Neither is there clear evidence to show use of Al-containing underarm antiperspirants or cosmetics increases the risk of AD or breast cancer. Metallic Al, its oxides, and common Al salts have not been shown to be either genotoxic or carcinogenic. Aluminum exposures during neonatal and pediatric parenteral nutrition (PN) can impair bone mineralization and delay neurological development. Adverse effects to vaccines with Al adjuvants have occurred; however, recent controlled trials found that the immunologic response to certain vaccines with Al adjuvants was no greater, and in some cases less than, that after identical vaccination without Al adjuvants. The scientific literature on the adverse health effects of Al is extensive. Health risk assessments for Al must take into account individual co-factors (e.g., age, renal function, diet, gastric pH). Conclusions from the current review point to the need for refinement of the PTWI, reduction of Al contamination in PN solutions, justification for routine addition of Al to vaccines, and harmonization of OELs for Al substances.

  19. Systematic review of potential health risks posed by pharmaceutical, occupational and consumer exposures to metallic and nanoscale aluminum, aluminum oxides, aluminum hydroxide and its soluble salts

    PubMed Central

    Willhite, Calvin C.; Karyakina, Nataliya A.; Yokel, Robert A.; Yenugadhati, Nagarajkumar; Wisniewski, Thomas M.; Arnold, Ian M. F.; Momoli, Franco; Krewski, Daniel

    2016-01-01

    Aluminum (Al) is a ubiquitous substance encountered both naturally (as the third most abundant element) and intentionally (used in water, foods, pharmaceuticals, and vaccines); it is also present in ambient and occupational airborne particulates. Existing data underscore the importance of Al physical and chemical forms in relation to its uptake, accumulation, and systemic bioavailability. The present review represents a systematic examination of the peer-reviewed literature on the adverse health effects of Al materials published since a previous critical evaluation compiled by Krewski et al. (2007). Challenges encountered in carrying out the present review reflected the experimental use of different physical and chemical Al forms, different routes of administration, and different target organs in relation to the magnitude, frequency, and duration of exposure. Wide variations in diet can result in Al intakes that are often higher than the World Health Organization provisional tolerable weekly intake (PTWI), which is based on studies with Al citrate. Comparing daily dietary Al exposures on the basis of “total Al” assumes that gastrointestinal bioavailability for all dietary Al forms is equivalent to that for Al citrate, an approach that requires validation. Current occupational exposure limits (OELs) for identical Al substances vary as much as 15-fold. The toxicity of different Al forms depends in large measure on their physical behavior and relative solubility in water. The toxicity of soluble Al forms depends upon the delivered dose of Al+3 to target tissues. Trivalent Al reacts with water to produce bidentate superoxide coordination spheres [Al(O2)(H2O4)+2 and Al(H2O)6+3] that after complexation with O2•−, generate Al superoxides [Al(O2•)](H2O5)]+2. Semireduced AlO2• radicals deplete mitochondrial Fe and promote generation of H2O2, O2•− and OH•. Thus, it is the Al+3-induced formation of oxygen radicals that accounts for the oxidative damage that

  20. Systematic review of potential health risks posed by pharmaceutical, occupational and consumer exposures to metallic and nanoscale aluminum, aluminum oxides, aluminum hydroxide and its soluble salts.

    PubMed

    Willhite, Calvin C; Karyakina, Nataliya A; Yokel, Robert A; Yenugadhati, Nagarajkumar; Wisniewski, Thomas M; Arnold, Ian M F; Momoli, Franco; Krewski, Daniel

    2014-10-01

    oxidative damage that leads to intrinsic apoptosis. In contrast, the toxicity of the insoluble Al oxides depends primarily on their behavior as particulates. Aluminum has been held responsible for human morbidity and mortality, but there is no consistent and convincing evidence to associate the Al found in food and drinking water at the doses and chemical forms presently consumed by people living in North America and Western Europe with increased risk for Alzheimer's disease (AD). Neither is there clear evidence to show use of Al-containing underarm antiperspirants or cosmetics increases the risk of AD or breast cancer. Metallic Al, its oxides, and common Al salts have not been shown to be either genotoxic or carcinogenic. Aluminum exposures during neonatal and pediatric parenteral nutrition (PN) can impair bone mineralization and delay neurological development. Adverse effects to vaccines with Al adjuvants have occurred; however, recent controlled trials found that the immunologic response to certain vaccines with Al adjuvants was no greater, and in some cases less than, that after identical vaccination without Al adjuvants. The scientific literature on the adverse health effects of Al is extensive. Health risk assessments for Al must take into account individual co-factors (e.g., age, renal function, diet, gastric pH). Conclusions from the current review point to the need for refinement of the PTWI, reduction of Al contamination in PN solutions, justification for routine addition of Al to vaccines, and harmonization of OELs for Al substances. PMID:25233067

  1. Determination of Ideal Broth Formulations Needed to Prepare Hydrous Aluminum Oxide Microspheres via the Internal Gelation Process

    SciTech Connect

    Collins, Jack Lee; Pye, S. L.

    2009-02-01

    A simple test-tube methodology was used to determine optimum process parameters for preparing hydrous aluminum oxide microspheres by the internal gelation process. Broth formulations of aluminum, hexamethylenetetramine, and urea were found that can be used to prepare hydrous aluminum oxide gel spheres in the temperature range of 60-90 C. A few gel-forming runs were made in which microspheres were prepared with some of these formulations in order to equate the test-tube gelation times with actual gelation times. These preparations confirmed that the test-tube methodology is reliable for determining the ideal broths.

  2. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

    SciTech Connect

    Akiyama, Morito; Kano, Kazuhiko; Teshigahara, Akihiko

    2009-10-19

    The authors have investigated the influence of growth temperature and scandium concentration on the piezoelectric response of scandium aluminum nitride (Sc{sub x}Al{sub 1-x}N) films prepared by dual reactive cosputtering. The piezoelectric response strongly depends on the growth temperature and scandium concentration. The piezoelectric response of the films prepared at 400 deg. C gradually increases with increasing scandium concentration. On the other hand, the piezoelectric response of the films prepared at 580 deg. C drastically decreases and increases in the scandium concentration from 30% to 40%. We think that the drastic change of the piezoelectric response is due to the disordered grain growth.

  3. Double-layer anti-reflection coating containing a nanoporous anodic aluminum oxide layer for GaAs solar cells.

    PubMed

    Yang, Tianshu; Wang, Xiaodong; Liu, Wen; Shi, Yanpeng; Yang, Fuhua

    2013-07-29

    Multilayer anti-reflection (AR) coatings can be used to improve the efficiency of Gallium Arsenide (GaAs) solar cells. We propose an alternate method to obtain optical thin films with specified refractive indices, which is using a self-assembled nanoporous anodic aluminum oxide (AAO) template as an optical thin film whose effective refractive index can be tuned by pore-widening. Different kinds of double-layer AR coatings each containing an AAO layer were designed and investigated by finite difference time domain (FDTD) method. We demonstrate that a λ /4n - λ /4n AR coating consisting of a TiO(2) layer and an AAO layer whose effective refractive index is 1.32 realizes a 96.8% light absorption efficiency of the GaAs solar cell under AM1.5 solar spectrum (400 nm-860 nm). We also have concluded some design principles of the double-layer AR coating containing an AAO layer for GaAs solar cells.

  4. Self-assembled stripes on the anodic aluminum oxide by atomic force microscope observation

    NASA Astrophysics Data System (ADS)

    Liu, H. W.; Guo, H. M.; Wang, Y. L.; Wang, Y. T.; Shen, C. M.; Wei, L.

    2003-12-01

    Non-polished aluminum sheets were anodized. The nanostructures were investigated in details using an atomic force microscope (AFM). The coexistence of self-assembled stripes and porous arrays on the Al surface was observed. The formation mechanism of the stripes is discussed based on the Brusselator model. We suggest that the self-assembled patterns on the Al surface strongly depend on the competition of the formation and the dissolution rate of alumina film during the reaction process. It is also found that this type of ordered structure can only form in certain conditions.

  5. Films based on oxidized starch and cellulose from barley.

    PubMed

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2015-11-20

    Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity.

  6. Application of diffusion barriers to the refractory fibers of tungsten, columbium, carbon and aluminum oxide

    NASA Technical Reports Server (NTRS)

    Douglas, F. C.; Paradis, E. L.; Veltri, R. D.

    1973-01-01

    A radio frequency powered ion-plating system was used to plate protective layers of refractory oxides and carbide onto high strength fiber substrates. Subsequent overplating of these combinations with nickel and titanium was made to determine the effectiveness of such barrier layers in preventing diffusion of the overcoat metal into the fibers with consequent loss of fiber strength. Four substrates, five coatings, and two metal matrix materials were employed for a total of forty material combinations. The substrates were tungsten, niobium, NASA-Hough carbon, and Tyco sapphire. The diffusion-barrier coatings were aluminum oxide, yttrium oxide, titanium carbide, tungsten carbide with 14% cobalt addition, and zirconium carbide. The metal matrix materials were IN 600 nickel and Ti 6/4 titanium. Adhesion of the coatings to all substrates was good except for the NASA-Hough carbon, where flaking off of the oxide coatings in particular was observed.

  7. Auger electron spectroscopy study of initial stages of oxidation in a copper - 19.6-atomic-percent-aluminum alloy

    NASA Technical Reports Server (NTRS)

    Ferrante, J.

    1973-01-01

    Auger electron spectroscopy was used to examine the initial stages of oxidation of a polycrystalline copper - 19.6 a/o-aluminum alloy. The growth of the 55-eV aluminum oxide peak and the decay of the 59-, 62-, and 937-eV copper peaks were examined as functions of temperature, exposure, and pressure. Pressures ranged from 1x10 to the minus 7th power to 0.0005 torr of O2. Temperatures ranged from room temperature to 700 C. A completely aluminum oxide surface layer was obtained in all cases. Complete disappearance of the underlying 937-eV copper peak was obtained by heating at 700 C in O2 at 0.0005 torr for 1 hr. Temperature studies indicated that thermally activated diffusion was important to the oxidation studies. The initial stages of oxidation followed a logarithmic growth curve.

  8. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  9. Low reflectance sputtered vanadium oxide thin films on silicon

    NASA Astrophysics Data System (ADS)

    Esther, A. Carmel Mary; Dey, Arjun; Rangappa, Dinesh; Sharma, Anand Kumar

    2016-07-01

    Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100-700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200-2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.

  10. Crystal structure of complex natural aluminum magnesium calcium iron oxide

    NASA Astrophysics Data System (ADS)

    Rastsvetaeva, R. K.; Aksenov, S. M.; Verin, I. A.

    2010-07-01

    The structure of a new natural oxide found near the Tashelga River (Eastern Siberia) was studied by X-ray diffraction. The pseudo-orthorhombic unit cell parameters are a = 5.6973(1) Å, b = 17.1823(4) Å, c = 23.5718(5) Å, β = 90°, sp. gr. Pc. The structure was refined to R = 0.0516 based on 4773 reflections with | F| > 7σ( F) taking into account the twin plane perpendicular to the z axis (the twin components are 0.47 and 0.53). The crystal-chemical formula ( Z = 4) is Ca2Mg{2/IV}Fe{2/(2+)IV}[Al{14/VI}O31(OH)][Al{2/IV}O][AlIV]ALIV(OH)], where the Roman numerals designate the coordination of the atoms. The structure of the mineral is based on wide ribbons of edge-sharing Al octahedra (an integral part of the spinel layer). The ribbons run along the shortest x axis and are inclined to the y and z axes. The adjacent ribbons are shifted with respect to each other along the y axis, resulting in the formation of step-like layers in which the two-ribbon thickness alternates with the three-ribbon thickness. Additional Al octahedra and Mg and Fe2+ tetrahedra are located between the ribbons. The layers are linked together to form a three-dimensional framework by Al tetrahedra, Ca polyhedra, and hydrogen bonds with the participation of OH groups.

  11. Crystal structure of complex natural aluminum magnesium calcium iron oxide

    SciTech Connect

    Rastsvetaeva, R. K. Aksenov, S. M.; Verin, I. A.

    2010-07-15

    The structure of a new natural oxide found near the Tashelga River (Eastern Siberia) was studied by X-ray diffraction. The pseudo-orthorhombic unit cell parameters are a = 5.6973(1) A, b = 17.1823(4) A, c = 23.5718(5) A, {beta} = 90{sup o}, sp. gr. Pc. The structure was refined to R = 0.0516 based on 4773 reflections with vertical bar F vertical bar > 7{sigma}(F) taking into account the twin plane perpendicular to the z axis (the twin components are 0.47 and 0.53). The crystal-chemical formula (Z = 4) is Ca{sub 2}Mg{sub 2}{sup IV}Fe{sub 2}{sup (2+)IV}[Al{sub 14}{sup VI}O{sub 31}(OH)][Al{sub 2}{sup IV}O][Al{sup IV}]AL{sup IV}(OH)], where the Roman numerals designate the coordination of the atoms. The structure of the mineral is based on wide ribbons of edge-sharing Al octahedra (an integral part of the spinel layer). The ribbons run along the shortest x axis and are inclined to the y and z axes. The adjacent ribbons are shifted with respect to each other along the y axis, resulting in the formation of step-like layers in which the two-ribbon thickness alternates with the three-ribbon thickness. Additional Al octahedra and Mg and Fe{sup 2+} tetrahedra are located between the ribbons. The layers are linked together to form a three-dimensional framework by Al tetrahedra, Ca polyhedra, and hydrogen bonds with the participation of OH groups.

  12. A thin-film aluminum strain gauges array in a flexible gastrointestinal catheter for pressure measurements

    NASA Astrophysics Data System (ADS)

    Sousa, P. J.; Silva, L. R.; Pinto, V. C.; Goncalves, L. M.; Minas, G.

    2016-08-01

    This paper presents an innovative approach to measure the pressure patterns associated with the motility and peristaltic movements in the upper gastrointestinal tract. This approach is based on inexpensive and easy to fabricate thin-film aluminum strain gauge pressure sensors using a flexible polyimide film (Kapton) as substrate and SU-8 structural support. These sensors are fabricated using well-established and standard photolithographic and wet etching techniques. Each sensor has a 3.4 mm2 area, allowing a fabrication process with a high level of sensors integration (four sensors in 1.7 cm), which is suitable for placing them in a single catheter. These strain gauges bend when pressure is applied and, consequently, their electrical resistance is changed. The fabricated sensors feature an almost linear response (R 2  =  0.9945) and an overall sensitivity of 6.4 mV mmHg-1. Their readout and control electronics were developed in a flexible Kapton ribbon cable and, together with the sensors, bonded and wrapped around a catheter-like structure. The sequential acquisition of the different signals is carried by a microcontroller with a 10 bit ADC at a sample rate of 250 Hz per-1 sensor. The signals are presented in a user friendly interface developed using the integrated development environment software, QtCreator IDE, for better visualization by physicians.

  13. A thin-film aluminum strain gauges array in a flexible gastrointestinal catheter for pressure measurements

    NASA Astrophysics Data System (ADS)

    Sousa, P. J.; Silva, L. R.; Pinto, V. C.; Goncalves, L. M.; Minas, G.

    2016-08-01

    This paper presents an innovative approach to measure the pressure patterns associated with the motility and peristaltic movements in the upper gastrointestinal tract. This approach is based on inexpensive and easy to fabricate thin-film aluminum strain gauge pressure sensors using a flexible polyimide film (Kapton) as substrate and SU-8 structural support. These sensors are fabricated using well-established and standard photolithographic and wet etching techniques. Each sensor has a 3.4 mm2 area, allowing a fabrication process with a high level of sensors integration (four sensors in 1.7 cm), which is suitable for placing them in a single catheter. These strain gauges bend when pressure is applied and, consequently, their electrical resistance is changed. The fabricated sensors feature an almost linear response (R 2  =  0.9945) and an overall sensitivity of 6.4 mV mmHg‑1. Their readout and control electronics were developed in a flexible Kapton ribbon cable and, together with the sensors, bonded and wrapped around a catheter-like structure. The sequential acquisition of the different signals is carried by a microcontroller with a 10 bit ADC at a sample rate of 250 Hz per‑1 sensor. The signals are presented in a user friendly interface developed using the integrated development environment software, QtCreator IDE, for better visualization by physicians.

  14. High-temperature oxidation behavior of two-phase iron-manganese-aluminum alloys

    SciTech Connect

    Liu, S.Y.; Lee, C.L.; Kao, C.H.; Perng, T.P.

    2000-04-01

    Oxidation behavior of two series of two-phase Fe-Mn-Al alloys in air up to 800 C was investigated. For the first series of alloys with various ratios of ferrite-austenite, the oxidation resistance of these alloys increased as the ferrite content increased. Two layers of oxide were formed mainly on the austenite grains, and oxidation in the ferrite phase was much less severe. The other layer of the scale on austenite was enriched with Mn and Fe, while Al was concentrated in the inner layer. For the second series of alloys with nearly the same contents of ferrite and C but various contents of Cr, the addition of Cr changed the oxidation characteristics and increased the oxidation resistance. Cr assisted the formation of a dense film of alumina (Al{sub 2}O{sub 3}) to prevent further oxidation.

  15. Characterization of nano-composite oxide ceramics and monitoring of oxide thin film growth by laser-induced breakdown spectroscopy

    NASA Astrophysics Data System (ADS)

    Pedarnig, J. D.; Heitz, J.; Stehrer, T.; Praher, B.; Viskup, R.; Siraj, K.; Moser, A.; Vlad, A.; Bodea, M. A.; Bäuerle, D.; Babu, N. Hari; Cardwell, D. A.

    2008-10-01

    Multi-component oxide ceramics and epitaxial oxide thin films are analyzed by laser-induced breakdown spectroscopy (LIBS). Furthermore, pulsed-laser deposition (PLD) of thin films is investigated by long-term monitoring of the optical plasma emission. Both nano-composite high-temperature superconductors (HTS) consisting of YBa 2Cu 3O 7 - δ bulk and Y 2Ba 4MCuO x (M-2411, M = Ag, Nb) nano-particles, and semiconducting ZnO doped with Aluminum and Lithium are ablated by nano-second laser pulses. The plasma emission is recorded using grating spectrometers with intensified gated detectors. The LIBS signals of nano-particles correlate with the nominal content of the M-2411 phase (0-15 mol%) and reveal a strong signal of Ytterbium impurity (3-35 ppm). In situ monitoring of the PLD process shows element signals that are stable for more than 10,000 laser pulses for both HTS and ZnO ceramics. The relative concentration of elements in thin films and ceramics as determined by LIBS is almost the same.

  16. Altering properties of cerium oxide thin films by Rh doping

    SciTech Connect

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír; and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  17. Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide.

    PubMed

    Rai, Vikrant R; Vandalon, Vincent; Agarwal, Sumit

    2010-09-01

    We have elucidated the reaction mechanism and the role of the reactive intermediates in the atomic layer deposition (ALD) of aluminum oxide from trimethyl aluminum in conjunction with O(3) and an O(2) plasma. In situ attenuated total reflection Fourier transform infrared spectroscopy data show that both -OH groups and carbonates are formed on the surface during the oxidation cycle. These carbonates, once formed on the surface, are stable to prolonged O(3) exposure in the same cycle. However, in the case of plasma-assisted ALD, the carbonates decompose upon prolonged O(2) plasma exposure via a series reaction kinetics of the type, A (CH(3)) --> B (carbonates) --> C (Al(2)O(3)). The ratio of -OH groups to carbonates on the surface strongly depends on the oxidizing agent, and also the duration of the oxidation cycle in plasma-assisted ALD. However, in both O(3) and O(2) plasma cycles, carbonates are a small fraction of the total number of reactive sites compared to the hydroxyl groups.

  18. Non-isothermal oxidation of aluminum nanopowder coated by hydrocarbons and fluorohydrocarbons

    NASA Astrophysics Data System (ADS)

    Sossi, A.; Duranti, E.; Paravan, C.; DeLuca, L. T.; Vorozhtsov, A. B.; Gromov, A. A.; Pautova, Yu. I.; Lerner, M. I.; Rodkevich, N. G.

    2013-04-01

    Aluminum nanopowder (nAl) obtained by electrical explosion of wires and passivated/coated with hydrocarbons and fluorohydrocarbons is comprehensively characterized. Coatings of different natures (octadecanoic and hexadecanoic acid, (1,1,11) trihydroperfluoro-undecan-1-ol, Fluorel™ + ester from esterification of (1,1,11) trihydroperfluoro-undecan-1-ol with furan-2,5-dione) were applied on the particle surface. The powders were studied by TEM, SEM, DSC-TGA, and BET specific surface area. The active aluminum content was determined by volumetric analyses. Coated nAl particles were compared to non-coated powder by the corresponding reactivity parameters obtained from DSC-TGA. It was found that while fatty acids have a weak effect on the non-isothermal oxidation behavior, fluoroelastomers shift the oxidation onset of nAl to higher temperatures by ˜20 °C for the first oxidation stage and by ˜100 °C for the second oxidation stage.

  19. The Cryogenic Properties of Several Aluminum-Beryllium Alloys and a Beryllium Oxide Material

    NASA Technical Reports Server (NTRS)

    Gamwell, Wayne R.; McGill, Preston B.

    2003-01-01

    Performance related mechanical properties for two aluminum-beryllium (Al-Be) alloys and one beryllium-oxide (BeO) material were developed at cryogenic temperatures. Basic mechanical properties (Le., ultimate tensile strength, yield strength, percent elongation, and elastic modulus were obtained for the aluminum-beryllium alloy, AlBeMetl62 at cryogenic [-195.5"C (-320 F) and -252.8"C (-423"F)I temperatures. Basic mechanical properties for the Be0 material were obtained at cyrogenic [- 252.8"C (-423"F)] temperatures. Fracture properties were obtained for the investment cast alloy Beralcast 363 at cryogenic [-252.8"C (-423"F)] temperatures. The AlBeMetl62 material was extruded, the Be0 material was hot isostatic pressing (HIP) consolidated, and the Beralcast 363 material was investment cast.

  20. Method for producing high quality oxide films on substrates

    DOEpatents

    Ruckman, M.W.; Strongin, M.; Gao, Y.L.

    1993-11-23

    A method is described for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material. 4 figures.

  1. Method for producing high quality oxide films on substrates

    DOEpatents

    Ruckman, Mark W.; Strongin, Myron; Gao, Yong L.

    1993-01-01

    A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

  2. Template synthesis and characterization of nanostructured lithium insertion electrodes and nanogold/porous aluminum oxide composite membranes

    NASA Astrophysics Data System (ADS)

    Patrissi, Charles John

    A membrane-based template synthesis method was used to prepare nanostructured Li-ion battery electrodes and nanogold/porous aluminum oxide composite membranes. Membrane-based template synthesis is a general method for the preparation of nanomaterials which entails deposition of the material of interest, or a suitable precursor, within the nanometer-diameter pores in a porous template membrane. This method allows for control of nanoparticle size and shape and is compatible with many methods of synthesis for bulk materials. The template membranes used in this work were commercially available porous polycarbonate filtration membranes and nanoporous aluminum oxide membranes that were prepared in-house. Nanostructured electrodes of orthorhombic V2O5, prepared using membrane-based template synthesis, were used to investigate the effects of Li-ion diffusion distance and V2O5 surface area on electrode rate capability. Nanowires of V2O5 were prepared by depositing a precursor in the pores of microporous polycarbonate filtration membranes. The result was an ensemble of 115 nm diameter, 2 mum long nanowires of V2O5 which protruded from a V 2O5 surface layer like the bristles of a brush. The Li + storage capacity of the nanostructured electrode was compared to a thin film control electrode at high discharge rates. Results show that the nanostructured electrode delivered three to four times the capacity of the thin film electrode at discharge rates above 500 C. A membrane based template synthesis method was also used to prepare crystalline V2O5 electrodes which have high volumetric charge capacities, at high discharge rates, compared to a thin-film control electrode. In order to obtain high volumetric rate capability, the as-received polycarbonate template membranes were chemically etched to increase membrane porosity. Nanofibrous electrodes of crystalline V2O5 were then prepared by depositing an alkoxide precursor in the pores of the etched membranes. Electrode volumetric

  3. Growth of porous anodized alumina on the sputtered aluminum films with 2D-3D morphology for high specific surface area

    NASA Astrophysics Data System (ADS)

    Liao, M. W.; Chung, C. K.

    2014-08-01

    The porous anodic aluminum oxide (AAO) with high-aspect-ratio pore channels is widely used as a template for fabricating nanowires or other one-dimensional (1D) nanostructures. The high specific surface area of AAO can also be applied to the super capacitor and the supporting substrate for catalysis. The rough surface could be helpful to enhance specific surface area but it generally results in electrical field concentration even to ruin AAO. In this article, the aluminum (Al) films with the varied 2D-3D morphology on Si substrates were prepared using magnetron sputtering at a power of 50 W-185 W for 1 h at a working pressure of 2.5 × 10-1 Pa. Then, AAO was fabricated from the different Al films by means of one-step hybrid pulse anodizing (HPA) between the positive 40 V and the negative -2 V (1 s:1 s) for 3 min in 0.3 M oxalic acid at a room temperature. The microstructure and morphology of Al films were characterized by X-ray diffraction, scanning electron microscope and atomic force microscope, respectively. Some hillocks formed at the high target power could be attributed to the grain texture growth in the normal orientation of Al(1 1 1). The 3D porous AAO structure which is different from the conventional 2D planar one has been successfully demonstrated using HPA on the film with greatly rough hillock-surface formed at the highest power of 185 W. It offers a potential application of the new 3D AAO to high specific surface area devices.

  4. Assessing the fate and effects of nano aluminum oxide in the terrestrial earthworm, Eisenia fetida.

    PubMed

    Coleman, Jessica G; Johnson, David R; Stanley, Jacob K; Bednar, Anthony J; Weiss, Charles A; Boyd, Robert E; Steevens, Jeffery A

    2010-07-01

    Nano-sized aluminum is currently being used by the military and commercial industries in many applications including coatings, thermites, and propellants. Due to the potential for wide dispersal in soil systems, we chose to investigate the fate and effects of nano-sized aluminum oxide (Al2O3), the oxidized form of nano aluminum, in a terrestrial organism. The toxicity and bioaccumulation potential of micron-sized (50-200 microm, nominal) and nano-sized (11 nm, nominal) Al2O3 was comparatively assessed through acute and subchronic bioassays using the terrestrial earthworm, Eisenia fetida. Subchronic (28-d) studies were performed exposing E. fetida to nano- and micron-sized Al2O3-spiked soils to assess the effects of long-term exposure. No mortality occurred in subchronic exposures, although reproduction decreased at >or=3,000 mg/kg nano-sized Al2O3 treatments, with higher aluminum body burdens observed at 100 and 300 mg/kg; no reproductive effects were observed in the micron-sized Al2O3 treatments. In addition to toxicity and bioaccumulation bioassays, an acute (48-h) behavioral bioassay was conducted utilizing a soil avoidance wheel in which E. fetida were given a choice of habitat between control, nano-, or micron-sized Al2O3 amended soils. In the soil avoidance bioassays, E. fetida exhibited avoidance behavior toward the highest concentrations of micron- and nano-sized Al2O3 (>5,000 mg/kg) relative to control soils. Results of the present study indicate that nano-sized Al2O3 may impact reproduction and behavior of E. fetida, although at high levels unlikely to be found in the environment. PMID:20821608

  5. Aluminum overload increases oxidative stress in four functional brain areas of neonatal rats

    PubMed Central

    2012-01-01

    Background Higher aluminum (Al) content in infant formula and its effects on neonatal brain development are a cause for concern. This study aimed to evaluate the distribution and concentration of Al in neonatal rat brain following Al treatment, and oxidative stress in brain tissues induced by Al overload. Methods Postnatal day 3 (PND 3) rat pups (n =46) received intraperitoneal injection of aluminum chloride (AlCl3), at dosages of 0, 7, and 35 mg/kg body wt (control, low Al (LA), and high Al (HA), respectively), over 14 d. Results Aluminum concentrations were significantly higher in the hippocampus (751.0 ± 225.8 ng/g v.s. 294.9 ± 180.8 ng/g; p < 0.05), diencephalon (79.6 ± 20.7 ng/g v.s. 20.4 ± 9.6 ng/g; p < 0.05), and cerebellum (144.8 ± 36.2 ng/g v.s. 83.1 ± 15.2 ng/g; p < 0.05) in the HA group compared to the control. The hippocampus, diencephalon, cerebellum, and brain stem of HA animals displayed significantly higher levels of lipid peroxidative products (TBARS) than the same regions in the controls. However, the average superoxide dismutase (SOD) activities in the cerebral cortex, hippocampus, cerebellum, and brain stem were lower in the HA group compared to the control. The HA animals demonstrated increased catalase activity in the diencephalon, and increased glutathione peroxidase (GPx) activity in the cerebral cortex, hippocampus, cerebellum, and brain stem, compared to controls. Conclusion Aluminum overload increases oxidative stress (H2O2) in the hippocampus, diencephalon, cerebellum, and brain stem in neonatal rats. PMID:22613782

  6. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    NASA Astrophysics Data System (ADS)

    Yilbas, B. S.; Ali, H.

    2016-08-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  7. Determining the Effect of Aluminum Oxide Nanoparticles on the Aggregation of Amyloid-Beta in Transgenic Caenorhabditis elegans

    NASA Astrophysics Data System (ADS)

    Patel, Suhag; Matticks, John; Howell, Carina

    2014-03-01

    The cause of Alzheimer's disease has been linked partially to genetic factors but the predicted environmental components have yet to be determined. In Alzheimer's, accumulation of amyloid-beta protein in the brain forms plaques resulting in neurodegeneration and loss of mental functions. It has been postulated that aluminum influences the aggregation of amyloid-beta. To test this hypothesis, transgenic Caenorhabditis elegans, CL2120, was used as a model organism to observe neurodegeneration in nematodes exposed to aluminum oxide nanoparticles. Behavioral testing, fluorescent staining, and fluorescence microscopy were used to test the effects of aggregation of amyloid-beta in the nervous systems of effected nematodes exposed to aluminum oxide nanoparticles. Energy-dispersive x-ray spectroscopy was used to quantify the total concentration of aluminum oxide that the worms were exposed to during the experiment. Exposure of transgenic and wild type worms to a concentration of 4 mg mL-1 aluminum oxide showed a decrease in the sinusoidal motion, as well as an infirmity of transgenic worms when compared to control worms. These results support the hypothesis that aluminum may play a role in neurodegeneration in C. elegans, and may influence and increase the progression of Alzheimer's disease. This work was supported by National Science Foundation grants DUE-1058829, DMR-0923047 DUE-0806660 and Lock Haven FPDC grants.

  8. Nanoporous anodic aluminum oxide with a long-range order and tunable cell sizes by phosphoric acid anodization on pre-patterned substrates

    PubMed Central

    Surawathanawises, Krissada; Cheng, Xuanhong

    2014-01-01

    Nanoporous anodic aluminum oxide (AAO) has been explored for various applications due to its regular cell arrangement and relatively easy fabrication processes. However, conventional two-step anodization based on self-organization only allows the fabrication of a few discrete cell sizes and formation of small domains of hexagonally packed pores. Recent efforts to pre-pattern aluminum followed with anodization significantly improve the regularity and available pore geometries in AAO, while systematic study of the anodization condition, especially the impact of acid composition on pore formation guided by nanoindentation is still lacking. In this work, we pre-patterned aluminium thin films using ordered monolayers of silica beads and formed porous AAO in a single-step anodization in phosphoric acid. Controllable cell sizes ranging from 280 nm to 760 nm were obtained, matching the diameters of the silica nanobead molds used. This range of cell size is significantly greater than what has been reported for AAO formed in phosphoric acid in the literature. In addition, the relationships between the acid concentration, cell size, pore size, anodization voltage and film growth rate were studied quantitatively. The results are consistent with the theory of oxide formation through an electrochemical reaction. Not only does this study provide useful operational conditions of nanoindentation induced anodization in phosphoric acid, it also generates significant information for fundamental understanding of AAO formation. PMID:24535886

  9. Nanoporous anodic aluminum oxide with a long-range order and tunable cell sizes by phosphoric acid anodization on pre-patterned substrates.

    PubMed

    Surawathanawises, Krissada; Cheng, Xuanhong

    2014-01-20

    Nanoporous anodic aluminum oxide (AAO) has been explored for various applications due to its regular cell arrangement and relatively easy fabrication processes. However, conventional two-step anodization based on self-organization only allows the fabrication of a few discrete cell sizes and formation of small domains of hexagonally packed pores. Recent efforts to pre-pattern aluminum followed with anodization significantly improve the regularity and available pore geometries in AAO, while systematic study of the anodization condition, especially the impact of acid composition on pore formation guided by nanoindentation is still lacking. In this work, we pre-patterned aluminium thin films using ordered monolayers of silica beads and formed porous AAO in a single-step anodization in phosphoric acid. Controllable cell sizes ranging from 280 nm to 760 nm were obtained, matching the diameters of the silica nanobead molds used. This range of cell size is significantly greater than what has been reported for AAO formed in phosphoric acid in the literature. In addition, the relationships between the acid concentration, cell size, pore size, anodization voltage and film growth rate were studied quantitatively. The results are consistent with the theory of oxide formation through an electrochemical reaction. Not only does this study provide useful operational conditions of nanoindentation induced anodization in phosphoric acid, it also generates significant information for fundamental understanding of AAO formation.

  10. Aluminum nitride thin film based acoustic wave sensors for biosensing applications

    NASA Astrophysics Data System (ADS)

    Xu, Jianzeng

    monitoring the frequency and phase changes in response to the coating of aluminum thin films onto the device surface. The derived mass sensitivity indicates that both modes could potentially reach an extremely low detection limit at the level of picograms.

  11. Unidirectional oxide hetero-interface thin-film diode

    SciTech Connect

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  12. Covering anodized aluminum with electropolymerized polypyrrole via manganese oxide layer and application to solid electrolytic capacitor

    NASA Astrophysics Data System (ADS)

    Kudoh, Yasuo; Kojima, Toshikuni; Fukuyama, Masao; Tsuchiya, Sohji; Yoshimura, Susumu

    A new technology for covering an etched and anodized aluminum (Al) foil with polypyrrole (PPy) was developed. PPy was electropolymerized from an external electrode via an extremely thin semiconducting manganese oxide layer prepared on the etched and anodized Al foil in advance. Pyrolytic and reduced manganese oxide could be used with little difference in the performance of the PPy layer growth. To obtain a high coverage ratio, the optimal starting materials were manganese nitrate for the pyrolysis process and sodium permanganate for the reduction process. On the basis of the technology, two kinds of Al solid electrolytic capacitors, in which the PPy layers are used as electrolytes, were produced and characterized. These capacitors showed almost equal ideal impedance-frequency characteristics, excellent temperature characteristics and environmental stability, and independence of the manganese oxide synthesis route.

  13. Two kinds of composite films: Graphene oxide/carbon nanotube film and graphene oxide/activated carbon film via a self-assemble preparation process

    NASA Astrophysics Data System (ADS)

    Zou, Li-feng; Ma, Nan; Sun, Mei; Ji, Tian-hao

    2014-11-01

    Two kinds of free-standing composite films, including graphene oxide and activated carbon film as well as graphene oxide and carbon nanotube film, were fabricated through a simple suspension mixing and then natural deposition process. The films were characterized by various measurement techniques in detail. The results show that the composite films without any treatment almost still remain the original properties of the corresponding precursors, and exhibit loose structure, which can be easily broken in water; whereas after treated at 200 °C in air, the films become relatively more dense, and even if immersed into concentrated strong alkali or acid for five days, they still keep the film-morphologies, but regretfully, they show obvious brittleness and slight hydrophilicity. As soon as the treated films are performed in high concentrated strong alkali for about one day, their brittleness and wettability can be improved and became good flexibility and complete hydrophilicity.

  14. Evaluation of Residual Stress Development at the Interface of Plasma Electrolytically Oxidized and Cold-Worked Aluminum

    NASA Astrophysics Data System (ADS)

    Asquith, David; Yerokhin, Aleksey; James, Neil; Yates, John; Matthews, Allan

    2013-10-01

    Fatigue failure in hard oxide-coated aluminum is usually driven by rapid short crack propagation from the interface through the substrate; mitigation of this is possible by introducing interfacial compressive stresses. Combining cold work with hard oxide coating can improve their performance under conditions of simultaneous wear, corrosion, and fatigue. Three-dimensional strain fields in an aluminum alloy with combined cold work and PEO coating have been measured and mechanisms for stress redistribution presented. These comprise material consumption, expansive growth of oxide layers, and local annealing.

  15. Influence of film thickness on laser ablation threshold of transparent conducting oxide thin-films

    NASA Astrophysics Data System (ADS)

    Rung, S.; Christiansen, A.; Hellmann, R.

    2014-06-01

    We report on a comprehensive study of the laser ablation threshold of transparent conductive oxide thin films. The ablation threshold is determined for both indium tin oxide and gallium zinc oxide as a function of film thickness and for different laser wavelengths. By using a pulsed diode pumped solid state laser at 1064 nm, 532 nm, 355 nm and 266 nm, respectively, the relationship between optical absorption length and film thickness is studied. We find that the ablation threshold decreases with increasing film thickness in a regime where the absorption length is larger than the film thickness. In turn, the ablation threshold increases in case the absorption length is smaller than the film thickness. In particular, we observe a minimum of the ablation threshold in a region where the film thickness is comparable to the absorption length. To the best of our knowledge, this behaviour previously predicted for thin metal films, has been unreported for all three regimes in case of transparent conductive oxides, yet. For industrial laser scribing processes, these results imply that the efficiency can be optimized by using a laser where the optical absorption length is close to the film thickness.

  16. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  17. Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

    SciTech Connect

    Baldi, G. Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S.

    2015-03-10

    We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

  18. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    PubMed

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization. PMID:25363298

  19. Reflection of a probe pulse and thermal emission of electrons produced by an aluminum film heated by a femtosecond laser pulse

    SciTech Connect

    Bezhanov, S. G.; Ionin, A. A.; Kanavin, A. P.; Kudryashov, S. I.; Makarov, S. V.; Seleznev, L. V.; Sinitsyn, D. V.; Uryupin, S. A.

    2015-06-15

    It is shown that an experimental decrease in the reflection of a probe femtosecond pulse from an aluminum film heated by a higher-power femtosecond pulse can be quantitatively described taking into account the inhomogeneous distribution of the laser pulse field in the film and the evolution of the electron and lattice temperature during absorption of the heating inhomogeneous field. Analysis of the electron temperature evolution on the heated film surface combined with modern concepts about the influence of a surface volume charge on thermal emission gave the relation between the amount of emitted electrons and experimental data on the heating of the aluminum film by the femtosecond pulse.

  20. CRYSTALLINE CHROMIUM DOPED ALUMINUM OXIDE (RUBY) USE AS A LUMINESCENT SCREEN FOR PROTON BEAMS.

    SciTech Connect

    BROWN,K.A.; GASSNER,D.M.

    1999-03-29

    In our search for a better luminescent screen material, we tested pieces of mono-crystalline chromium doped aluminum oxide (more commonly known as a ruby) using a 24 GeV proton beam. Due to the large variations in beam intensity and species which are run at the Alternating Gradient Synchrotron (AGS), we hope to find a material which can sufficiently luminesce, is compatible in vacuum, and maintain its performance level over extended use. Results from frame grabbed video camera images using a variety of neutral density filters are presented.

  1. Near-infrared optical properties of a porous alumina ceramics produced by hydrothermal oxidation of aluminum

    NASA Astrophysics Data System (ADS)

    Lisitsyn, Aleksey V.; Dombrovsky, Leonid A.; Mendeleyev, Vladimir Ya.; Grigorenko, Anatoly V.; Vlaskin, Mikhail S.; Zhuk, Andrey Z.

    2016-07-01

    The measured spectral normal-hemispherical reflectance of an optically thick sample of porous alumina ceramics produced by hydrothermal oxidation of aluminum and subsequent high-temperature treatment of boehmite (or böhmite), AlO(OH), is used in a combination with the published data for absorption coefficient of alumina to retrieve the near-infrared optical properties of the alumina ceramics at both room and elevated temperatures. The spectral emissivity of porous alumina ceramics is also determined. An approximate model based on the Mie theory for single grains is suggested to estimate the transport scattering coefficient and the radiative conductivity of the material at high temperatures.

  2. Formation of calcium in the products of iron oxide-aluminum thermite combustion in air

    NASA Astrophysics Data System (ADS)

    Gromov, A. A.; Gromov, A. M.; Popenko, E. M.; Sergienko, A. V.; Sabinskaya, O. G.; Raab, B.; Teipel, U.

    2016-10-01

    The composition of condensed products resulting from the combustion of thermite mixtures (Al + Fe2O3) in air is studied by precise methods. It is shown that during combustion, calcium is formed and stabilized in amounts of maximal 0.55 wt %, while is missing from reactants of 99.7 wt % purity. To explain this, it is hypothesized that a low-energy nuclear reaction takes place alongside the reactions of aluminum oxidation and nitridation, resulting in the formation of calcium (Kervran-Bolotov reaction).

  3. Aptamer-modified anodized aluminum oxide-based capacitive sensor for the detection of bisphenol A

    NASA Astrophysics Data System (ADS)

    Kang, Bongkeun; Kim, Joo Hyoung; Kim, Soyoun; Yoo, Kyung-Hwa

    2011-02-01

    We describe a rapid, sensitive, and low-cost method to detect bisphenol A (BPA) using an anodized aluminum oxide-based capacitive sensor. BPA is detected by measuring the change in capacitance caused by the biospecific binding of BPA with a BPA aptamer that is immobilized on the electrode surface. For a solution containing 100 pM BPA, the capacitance decreased by approximately 3%. In addition, we fabricated a capacitive sensor array and demonstrated that BPA in environmental samples can be measured using our capacitive sensor.

  4. Oxidation behavior in reaction-bonded aluminum-silicon alloy/alumina powder compacts

    SciTech Connect

    Yokota, S.H.

    1992-12-01

    Goal of this research is to determine the feasibility of producing low-shrinkage mullite/alumina composites by applying the reaction-bonded alumina (RBAO) process to an aluminum-silicon alloy/alumina system. Mirostructural and compositional changes during heat treatment were studied by removing samples from the furnace at different steps in the heating schedule and then using optical and scanning electron microscopy, EDS and XRD to characterize the powder compacts. Results suggest that the oxidation behavior of the alloy compact is different from the model proposed for the pure Al/alumina system.

  5. Elastic strain gradients and x-ray line broadening effects as a function of temperature in aluminum thin films on silicon

    SciTech Connect

    Venkatraman, R. ); Besser, P.R.; Bravman, J.C. ); Brennan, S. )

    1994-02-01

    Grazing incidence x-ray scattering (GIXS) with a synchrotron source was used to measure elastic strain gradients as a function of temperature in aluminum and aluminum alloy thin films of different thicknesses on silicon. The stresses in the films are induced as a result of the difference in thermal expansion coefficient between film and substrate. Disregarding minor deviations at the surface, it is shown that there are no gross strain gradients in these films in the range of temperatures (between room temperature and 400 [degree]C) considered. Significant x-ray line broadening effects were observed, suggesting an accumulation of dislocations on cooling the films and their annealing out as the films were being reheated. The variation of the dislocation density during thermal cycling compares well in nature with that of the concurrent variation in film stress, indicating that large strain hardening effects contribute towards the film flow stress.

  6. Study of indium tin oxide films exposed to atomic axygen

    NASA Technical Reports Server (NTRS)

    Snyder, Paul G.; De, Bhola N.; Woollam, John A.; Coutts, T. J.; Li, X.

    1989-01-01

    A qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.

  7. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  8. Role of melt behavior in modifying oxidation distribution using an interface incorporated model in selective laser melting of aluminum-based material

    NASA Astrophysics Data System (ADS)

    Gu, Dongdong; Dai, Donghua

    2016-08-01

    A transient three dimensional model for describing the molten pool dynamics and the response of oxidation film evolution in the selective laser melting of aluminum-based material is proposed. The physical difference in both sides of the scan track, powder-solid transformation and temperature dependent physical properties are taken into account. It shows that the heat energy tends to accumulate in the powder material rather than in the as-fabricated part, leading to the formation of the asymmetrical patterns of the temperature contour and the attendant larger dimensions of the molten pool in the powder phase. As a higher volumetric energy density is applied (≥1300 J/mm3), a severe evaporation is produced with the upward direction of velocity vector in the irradiated powder region while a restricted operating temperature is obtained in the as-fabricated part. The velocity vector continuously changes from upward direction to the downward one as the scan speed increases from 100 mm/s to 300 mm/s, promoting the generation of the debris of the oxidation films and the resultant homogeneous distribution state in the matrix. For the applied hatch spacing of 50 μm, a restricted remelting phenomenon of the as-fabricated part is produced with the upward direction of the convection flow, significantly reducing the turbulence of the thermal-capillary convection on the breaking of the oxidation films, and therefore, the connected oxidation films through the neighboring layers are typically formed. The morphology and distribution of the oxidation are experimentally acquired, which are in a good agreement with the results predicted by simulation.

  9. A novel Graphene Oxide film: Synthesis and Dielectric properties

    NASA Astrophysics Data System (ADS)

    Canimkurbey, Betul; San, Sait Eren; Yasin, Muhammad; Köse, Muhammet Erkan

    In this work, we used Hummers method to synthesize Graphene Oxide (GO) and its parallel plate impedance spectroscopic technique to investigate dielectric properties. Graphene Oxide films were coated using drop casting method on ITO substrate. To analyze film morphology, atomic force microscopy was used. Dielectrics measurements of the samples were performed using impedance analyzer (HP-4194) in frequency range (100 Hz to 10MHz) at different temperatures. It was observed that the films' AC conductivity σac varied with angular frequency, ω as ωS, with S<1. The electrical properties of GO showed changes depending on both frequency and temperature. We observed GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Using solution processed Graphene Oxide will provide potential for organic electronic applications through its photon absorption and transmittance capability in the visible range and excellent electrical parameters.

  10. Ordered fragmentation of oxide thin films at submicron scale

    PubMed Central

    Guo, L.; Ren, Y.; Kong, L. Y.; Chim, W. K.; Chiam, S. Y.

    2016-01-01

    Crack formation is typically undesirable as it represents mechanical failure that compromises strength and integrity. Recently, there have also been numerous attempts to control crack formation in materials with the aim to prevent or isolate crack propagation. In this work, we utilize fragmentation, at submicron and nanometre scales, to create ordered metal oxide film coatings. We introduce a simple method to create modified films using electroplating on a prepatterned substrate. The modified films undergo preferential fragmentation at locations defined by the initial structures on the substrate, yielding ordered structures. In thicker films, some randomness in the characteristic sizes of the fragments is introduced due to competition between crack propagation and crack creation. The method presented allows patterning of metal oxide films over relatively large areas by controlling the fragmentation process. We demonstrate use of the method to fabricate high-performance electrochromic structures, yielding good coloration contrast and high coloration efficiency. PMID:27748456

  11. Ordered fragmentation of oxide thin films at submicron scale

    NASA Astrophysics Data System (ADS)

    Guo, L.; Ren, Y.; Kong, L. Y.; Chim, W. K.; Chiam, S. Y.

    2016-10-01

    Crack formation is typically undesirable as it represents mechanical failure that compromises strength and integrity. Recently, there have also been numerous attempts to control crack formation in materials with the aim to prevent or isolate crack propagation. In this work, we utilize fragmentation, at submicron and nanometre scales, to create ordered metal oxide film coatings. We introduce a simple method to create modified films using electroplating on a prepatterned substrate. The modified films undergo preferential fragmentation at locations defined by the initial structures on the substrate, yielding ordered structures. In thicker films, some randomness in the characteristic sizes of the fragments is introduced due to competition between crack propagation and crack creation. The method presented allows patterning of metal oxide films over relatively large areas by controlling the fragmentation process. We demonstrate use of the method to fabricate high-performance electrochromic structures, yielding good coloration contrast and high coloration efficiency.

  12. Plasticity mechanisms in ultrafine grained freestanding aluminum thin films revealed by in-situ transmission electron microscopy nanomechanical testing

    SciTech Connect

    Idrissi, Hosni; Kobler, Aaron; Amin-Ahmadi, Behnam; Schryvers, Dominique; Coulombier, Michael; Pardoen, Thomas; Galceran, Montserrat; Godet, Stéphane; Kübel, Christian

    2014-03-10

    In-situ bright field transmission electron microscopy (TEM) nanomechanical tensile testing and in-situ automated crystallographic orientation mapping in TEM were combined to unravel the elementary mechanisms controlling the plasticity of ultrafine grained Aluminum freestanding thin films. The characterizations demonstrate that deformation proceeds with a transition from grain rotation to intragranular dislocation glide and starvation plasticity mechanism at about 1% deformation. The grain rotation is not affected by the character of the grain boundaries. No grain growth or twinning is detected.

  13. Effect of environment on iodine oxidation state and reactivity with aluminum.

    PubMed

    Smith, Dylan K; McCollum, Jena; Pantoya, Michelle L

    2016-04-28

    Iodine oxide is a highly reactive solid oxidizer and with its abundant generation of iodine gas during reaction, this oxidizer also shows great potential as a biocidal agent. A problem with using I2O5 in an energetic mixture is its highly variable reactive behavior. This study isolates the variable reactivity associated with I2O5 as a function of its chemical reaction in various environments. Specifically, aluminum fuel and iodine oxide powder are combined using a carrier fluid to aid intermixing. The carrier fluid is shown to significantly affect the oxidation state of iodine oxide, thereby affecting the reactivity of the mixture. Four carrier fluids were investigated ranging in polarity and water miscibility in increasing order from hexane < acetone < isopropanol < water as well as untreated, dry-mixed reactants. Oxidation state and reactivity were examined with experimental techniques including X-ray photoelectric spectroscopy (XPS) and differential scanning calorimetry (DSC). Results are compared with thermal equilibrium simulations. Flame speeds increased with polarity of the fluid used to intermix the powder and ranged from 180 to 1202 m s(-1). The I2O5 processed in the polar fluids formed hydrated states of iodine oxide: HIO3 and HI3O8; and, the nonpolar and dry-mixed samples formed: I2O4 and I4O9. During combustion, the hydrated iodine oxides rapidly dehydrated from HIO3 to HI3O8 and from HI3O8 to I2O5. Both steps release 25% of their mass as vapor during combustion. Increased gas generation enhances convective energy transport and accounts for the increase in reactivity seen in the mixtures processed in polar fluids. These results explain the chemical mechanisms underlying the variable reactivity of I2O5 that are a function of the oxide's highly reactive nature with its surrounding environment. These results will significantly impact the selection of carrier fluid in the synthesis approach for iodine containing reactive mixtures. PMID:27052472

  14. Effect of environment on iodine oxidation state and reactivity with aluminum.

    PubMed

    Smith, Dylan K; McCollum, Jena; Pantoya, Michelle L

    2016-04-28

    Iodine oxide is a highly reactive solid oxidizer and with its abundant generation of iodine gas during reaction, this oxidizer also shows great potential as a biocidal agent. A problem with using I2O5 in an energetic mixture is its highly variable reactive behavior. This study isolates the variable reactivity associated with I2O5 as a function of its chemical reaction in various environments. Specifically, aluminum fuel and iodine oxide powder are combined using a carrier fluid to aid intermixing. The carrier fluid is shown to significantly affect the oxidation state of iodine oxide, thereby affecting the reactivity of the mixture. Four carrier fluids were investigated ranging in polarity and water miscibility in increasing order from hexane < acetone < isopropanol < water as well as untreated, dry-mixed reactants. Oxidation state and reactivity were examined with experimental techniques including X-ray photoelectric spectroscopy (XPS) and differential scanning calorimetry (DSC). Results are compared with thermal equilibrium simulations. Flame speeds increased with polarity of the fluid used to intermix the powder and ranged from 180 to 1202 m s(-1). The I2O5 processed in the polar fluids formed hydrated states of iodine oxide: HIO3 and HI3O8; and, the nonpolar and dry-mixed samples formed: I2O4 and I4O9. During combustion, the hydrated iodine oxides rapidly dehydrated from HIO3 to HI3O8 and from HI3O8 to I2O5. Both steps release 25% of their mass as vapor during combustion. Increased gas generation enhances convective energy transport and accounts for the increase in reactivity seen in the mixtures processed in polar fluids. These results explain the chemical mechanisms underlying the variable reactivity of I2O5 that are a function of the oxide's highly reactive nature with its surrounding environment. These results will significantly impact the selection of carrier fluid in the synthesis approach for iodine containing reactive mixtures.

  15. Electrochromic lithium nickel oxide thin film by pulsed laser deposition

    SciTech Connect

    Wen, S.J.; Rottkay, K. von; Rubin, M.

    1996-10-01

    * Thin films of lithium nickel oxide were deposited by pulsed laser deposition (PLD) from targets of pressed LiNiO{sub 2} powder with layered structure. The composition, structure and surface air sensitivity of these films were analyzed using a variety of techniques, such as nuclear reaction analysis, Rutherford backscattering spectrometry (RBS), x-ray diffraction, infrared spectroscopy, and atomic force microscopy. Optical properties were measured using a combination of variable angle spectroscopic ellipsometry and IP spectroradiometry. Crystalline structure, surface morphology and chemical composition of Li{sub x}Ni{sub 1-x}O thin films depend strongly on deposition oxygen pressure, temperature as well as substrate target distance. The films produced at temperatures lower than 600 degrees C spontaneously absorb CO{sub 2} and H{sub 2}O at their surface once they are exposed to the air. The films deposited at 600 degrees C proved to be stable in air over a long period. Even when deposited at room temperature the PLD films are denser and more stable than sputtered films. RBS determined that the best electrochromic films had the stoichiometric composition L{sub 0.5}Ni{sub 0.5}O when deposited at 60 mTorr O{sub 2} pressure. Electrochemical tests show that the films exhibit excellent reversibility in the range 1.0 V to 3.4 V versus lithium and long cyclic life stability in a liquid electrolyte half cell. Electrochemical formatting which is used to develop electrochromism in other films and nickel oxide films is not needed for these stoichiometric films. The optical transmission range is almost 70% at 550 nm for 120 nm thick films.

  16. Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates.

    PubMed

    Park, Hyeongsik; Nam, Sang-Hun; Shin, Myunghun; Ju, Minkyu; Lee, Youn-Jung; Yu, Jung-Hoon; Jung, Junhee; Kim, Sunbo; Ahn, Shihyun; Boo, Jin-Hyo; Yi, Junsin

    2016-05-01

    We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric (HCl) acids. The etching depth and surface roughness increased with an increase in the HF content and the etching time. The HF-based residues produced insoluble hexafluorosilicate anion- and oxide impurity-based semipermeable films, which reduced the etching rate. Using a small amount of HCl dissolved the Ca compounds, helping to fragment the semipermeable film. This formed random, complex structures on the glass substrates. The angled deposition of three layers of ZnO:Al led to the synthesis of multiscaled ZnO:Al textures on the glass substrates. The proposed approach resulted in textured ZnO:Al TCO films that exhibited high transmittance (-80%) and high haze (> 40%) values over wavelengths of 400-1000 nm, as well as low sheet resistances (< 18 Ω/sq)..Si tandem solar cells based on the ZnO:Al textured TCO films exhibited photocurrents and cell efficiencies that were 40% higher than those of cells with conventional TCO films. PMID:27483840

  17. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    SciTech Connect

    Coloma Ribera, R. Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  18. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Yakshin, A. E.; Bijkerk, F.

    2015-08-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  19. Photo-oxidation Behaviour of EVA Antimicrobial Films

    NASA Astrophysics Data System (ADS)

    Botta, L.; Scaffaro, R.; La Mantia, F. P.

    2010-06-01

    In this work the photo-oxidation of neat EVA and antimicrobial EVA/Nisin films was studied. Two EVA samples—containing two different vinyl acetate levels—were added with different amounts of nisin. The influence of the matrix type and of the nisin content on the photo-oxidation behaviour was evaluated. The photo-oxidation has been followed by monitoring the change of the mechanical and spectroscopic properties upon artificial exposure to UV-B light. The results revealed that the films incorporating nisin show a better photo resistance with respect to the neat polymer. This improvement becomes weaker with decreasing the amount of nisin incorporated. Moreover the EVA 28 based films showed a much slower photo-oxidation rate in comparison with the EVA 14 based ones.

  20. Phantom dosimetric study of nondivergent aluminum tissue compensator using ion chamber, TLD, and gafchromic film.

    PubMed

    Kinhikar, Rajesh A; Tambe, Chandrashekhar M; Upreti, Ritu R; Patkar, Sachin; Patil, Kalpana; Deshpande, Deepak D

    2008-01-01

    Anatomic contour irregularity and tissue inhomogeneity in head-and-neck radiotherapy can lead to significant dose inhomogeneity due to the presence of hot and cold spots across the treatment volumes. Missing tissue compensators (TCs) can overcome this dose inhomogeneity. The current study examines the capacity of 2-dimensional (2D) custom aluminum TCs fabricated at our hospital to improve the dose homogeneity across the treatment volume. The dosimetry of the 2D custom TCs was carried out in a specially designed head-and-neck phantom for anterior-posterior (AP) and posterior-anterior (PA) fields with an ion chamber, thermoluminscence dosimeters (TLDs), and film. The results were compared for compensated and uncompensated plans generated from the Eclipse treatment planning system. On average, open-field plans contained peak doses of 117%, optimally wedged-plans contained peak doses of 113%, and custom-compensated plans contained peak doses of 105%. The dose variation between prescribed and measured dose at midplane of the phantom was observed as high as 17%, which was reduced to 3.2% for the customized TC during ionometric measurements. It was further confirmed with TLDs, in a sagittal plane, that the high-dose region of 13.3% was reduced to 2.3%. The measurements carried out with the ion chamber, TLDs, and film were found in good agreement with each other and with Eclipse. Thus, a custom-made 2D TC is capable of reducing hot spots to improve overall dose homogeneity across the treatment volume.

  1. Phantom Dosimetric Study of Nondivergent Aluminum Tissue Compensator Using Ion Chamber, TLD, and Gafchromic Film

    SciTech Connect

    Kinhikar, Rajesh A. Tambe, Chandrashekhar M.; Upreti, Ritu R.; Patkar, Sachin; Patil, Kalpana; Deshpande, Deepak D.

    2008-01-01

    Anatomic contour irregularity and tissue inhomogeneity in head-and-neck radiotherapy can lead to significant dose inhomogeneity due to the presence of hot and cold spots across the treatment volumes. Missing tissue compensators (TCs) can overcome this dose inhomogeneity. The current study examines the capacity of 2-dimensional (2D) custom aluminum TCs fabricated at our hospital to improve the dose homogeneity across the treatment volume. The dosimetry of the 2D custom TCs was carried out in a specially designed head-and-neck phantom for anterior-posterior (AP) and posterior-anterior (PA) fields with an ion chamber, thermoluminscence dosimeters (TLDs), and film. The results were compared for compensated and uncompensated plans generated from the Eclipse treatment planning system. On average, open-field plans contained peak doses of 117%, optimally wedged-plans contained peak doses of 113%, and custom-compensated plans contained peak doses of 105%. The dose variation between prescribed and measured dose at midplane of the phantom was observed as high as 17%, which was reduced to 3.2% for the customized TC during ionometric measurements. It was further confirmed with TLDs, in a sagittal plane, that the high-dose region of 13.3% was reduced to 2.3%. The measurements carried out with the ion chamber, TLDs, and film were found in good agreement with each other and with Eclipse. Thus, a custom-made 2D TC is capable of reducing hot spots to improve overall dose homogeneity across the treatment volume.

  2. Flexible gastrointestinal motility pressure sensors based on aluminum thin-film strain-gauge arrays

    NASA Astrophysics Data System (ADS)

    Silva, L. R.; Sousa, P. J.; Goncalves, L. M.; Minas, G.

    2015-07-01

    This paper reports on an innovative approach to measuring intraluminal pressure in the upper gastrointestinal (GI) tract, especially monitoring GI motility and peristaltic movements. The proposed approach relies on thin-film aluminum strain gauges deposited on top of a Kapton membrane, which in turn lies on top of an SU-8 diaphragm-like structure. This structure enables the Kapton membrane to bend when pressure is applied, thereby affecting the strain gauges and effectively changing their electrical resistance. The sensor, with an area of 3.4 mm2, is fabricated using photolithography and standard microfabrication techniques (wet etching). It features a linear response (R2 = 0.9987) and an overall sensitivity of 2.6 mV mmHg-1. Additionally, its topology allows a high integration capability. The strain gauges’ responses to pressure were studied and the fabrication process optimized to achieve high sensitivity, linearity, and reproducibility. The sequential acquisition of the different signals is carried out by a microcontroller, with a 10-bit ADC and a sample rate of 250 Hz. The pressure signals are then presented in a user-friendly interface, developed using the Integrated Development Environment software, QtCreator IDE, for better visualization by physicians.

  3. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  4. Oxide film on metal substrate reduced to form metal-oxide-metal layer structure

    NASA Technical Reports Server (NTRS)

    Youngdahl, C. A.

    1967-01-01

    Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.

  5. Growth of Epitaxial Oxide Thin Films on Graphene

    NASA Astrophysics Data System (ADS)

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-08-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices.

  6. Growth of Epitaxial Oxide Thin Films on Graphene

    PubMed Central

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  7. Growth of Epitaxial Oxide Thin Films on Graphene.

    PubMed

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M; Klein, Norbert; Alford, Neil M; Petrov, Peter K

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  8. Coprecipitation of arsenate with metal oxides. 3. Nature, mineralogy, and reactivity of iron(III)-aluminum precipitates.

    PubMed

    Violante, Antonio; Pigna, Massimo; Del Gaudio, Stefania; Cozzolino, Vincenza; Banerjee, Dipanjan

    2009-03-01

    Coprecipitation involving arsenic with aluminum or iron has been studied because this technique is considered particularly efficient for removal of this toxic element from polluted waters. Coprecipitation of arsenic with mixed iron-aluminum solutions has received scant attention. In this work we studied (i)the mineralogy, surface properties, and chemical composition of mixed iron-aluminum oxides formed at initial Fe/Al molar ratio of 1.0 in the absence or presence of arsenate [As/ Fe+Al molar ratio (R) of 0, 0.01, or 0.1] and at pH 4.0, 7.0, and 10.0 and aged for 30 and 210 days at 50 degrees C and (ii) the removal of arsenate from the coprecipitates after addition of phosphate. The amounts of short-range ordered precipitates (ferrihydrite, aluminous ferrihydrite and/or poorly crystalline boehmite) were greater than those found in iron and aluminum systems (studied in previous works), due to the capacity of both aluminum and arsenate to retard or inhibitthe transformation of the initially formed precipitates into well-crystallized oxides (gibbsite, bayerite, and hematite). As a consequence, the surface areas of the iron-aluminum oxides formed in the absence or presence of arsenate were usually much larger than those of aluminum or iron oxides formed under the same conditions. Arsenate was found to be associated mainly into short-range ordered materials. Chemical composition of all samples was affected by pH, initial R, and aging. Phosphate sorption was facilitated by the presence of short-range ordered materials, mainly those richer in aluminum, but was inhibited by arsenate present in the samples. The quantities of arsenate replaced by phosphate, expressed as percentages of its total amount present in the samples, were particularly low, ranging from 10% to 26%. A comparison of the desorption of arsenate by phosphate from aluminum-arsenate and iron-arsenate (studied in previous works) and iron-aluminum-arsenate coprecipitates evidenced that phosphate has a greater

  9. Synthesis and Oxidation Resistance of h-BN Thin Films

    NASA Astrophysics Data System (ADS)

    Stewart, David; Meulenberg, Robert; Lad, Robert

    Hexagonal boron nitride (h-BN) is an exciting 2D material for use in sensors and other electronic devices that operate in harsh, high temperature environments. Not only is h-BN a wide band gap material with excellent wear resistance and high temperature stability, but recent reports indicate that h-BN can prevent metallic substrates from oxidizing above 600°C in low O2 pressures. However, the PVD of highly crystalline h-BN films required for this oxidation protection has proven challenging. In this work, we have explored the growth of h-BN thin films by reactive RF magnetron sputtering from an elemental B target in an Ar/N2 atmosphere. The film growth rate is extremely slow and the resulting films are atomically smooth and homogeneous. Using DC biasing during deposition and high temperature annealing treatments, the degree of film crystallinity can be controlled. The oxidation resistance of h-BN films deposited on inert sapphire and reactive metal substrates such as Zr and ZrB2 has been examined by techniques such as XPS, XRD, and SEM after oxidation between 600 and 1200°C under varying oxygen pressures. The success of h-BN as a passivation layer for metallic substrates in harsh environments is shown to depend greatly on its crystalline quality and defects. Supported by the NSF SusChEM program.

  10. An investigation of the electrical behavior of thermally-sprayed aluminum oxide

    SciTech Connect

    Swindeman, C.J.; Seals, R.D.; White, R.L.; Murray, W.P.; Cooper, M.H.

    1996-09-01

    Electrical properties of plasma-sprayed aluminum oxide coatings were measured at temperatures up to 600 C. High purity (> 99.5 wt% pure Al{sub 2}O{sub 3}) alumina powders were plasma-sprayed on stainless steel substrates over a range of power levels, using two gun configurations designed to attain different spray velocities. Key electrical properties were measured to evaluate the resultant coatings as potential insulating materials for electrostatic chucks (ESCs) being developed for semiconductor manufacturing. Electrical resistivity of all coatings was measured under vacuum upon heating and cooling over a temperature range of 20 to 600 C. Dielectric constants were also measured under the same test conditions. X-ray diffraction was performed to examine phase formation in the coatings. Results show the important of powder composition and careful selection and control of spray conditions for optimizing electrical behavior in plasma-sprayed aluminum oxide, and point to the need for further studies to characterize the relationship between high temperature electrical properties, measured plasma-spray variables, and specific microstructural and compositional coating features.

  11. A molecular beacon biosensor based on the nanostructured aluminum oxide surface.

    PubMed

    Che, Xiangchen; He, Yuan; Yin, Haocheng; Que, Long

    2015-10-15

    A new class of molecular beacon biosensors based on the nanostructured aluminum oxide or anodic aluminum oxide (AAO) surface is reported. In this type of sensor, the AAO surface is used to enhance the fluorescent signals of the fluorophore-labeled hairpin DNA. When a target DNA with a complementary sequence to that of the hairpin DNA is applied on the sensor, the fluorophores are forced to move away from the AAO surface due to the hybridization between the hairpin DNA and the target DNA, resulting in the significant decrease of the fluorescent signals. The observed signal reduction is sufficient to achieve a demonstrated detection limit of 10nM, which could be further improved by optimizing the AAO surface. The control experiments have also demonstrated that the bioassay used in the experiments has excellent specificity and selectivity, indicating the great promise of this type of sensor for diagnostic applications. Since the arrayed AAO micropatterns can be fabricated on a single chip in a cost-effective manner, the arrayed sensors could provide an ideal technical platform for studying fundamental biological process and monitoring disease biomarkers.

  12. Anodic aluminum oxide with fine pore size control for selective and effective particulate matter filtering

    NASA Astrophysics Data System (ADS)

    Zhang, Su; Wang, Yang; Tan, Yingling; Zhu, Jianfeng; Liu, Kai; Zhu, Jia

    2016-07-01

    Air pollution is widely considered as one of the most pressing environmental health issues. Particularly, atmospheric particulate matters (PM), a complex mixture of solid or liquid matter suspended in the atmosphere, are a harmful form of air pollution due to its ability to penetrate deep into the lungs and blood streams, causing permanent damages such as DNA mutations and premature death. Therefore, porous materials which can effectively filter out particulate matters are highly desirable. Here, for the first time, we demonstrate that anodic aluminum oxide with fine pore size control fabricated through a scalable process can serve as effective and selective filtering materials for different types of particulate matters (such as PM2.5, PM10). Combining selective and dramatic filtering effect, fine pore size control and a scalable process, this type of anodic aluminum oxide templates can potentially serve as a novel selective filter for different kinds of particulate matters, and a promising and complementary solution to tackle this serious environmental issue.

  13. Real time monitoring of layer-by-layer polyelectrolyte deposition and bacterial enzyme detection in nanoporous anodized aluminum oxide.

    PubMed

    Krismastuti, Fransiska Sri Herwahyu; Bayat, Haider; Voelcker, Nicolas H; Schönherr, Holger

    2015-04-01

    Porous anodized aluminum oxide (pAAO) is a nanostructured material, which due to its optical properties lends itself to the design of optical biosensors where interactions in the pores of this material are transduced into interferometric reflectance shifts. In this study, a pAAO-based biosensor was developed as a biosensing platform to detect proteinase K, an enzyme which is a readily available model system for the proteinase produced by Pseudomonas aeruginosa. The pAAO pore walls are decorated by means of the layer-by-layer (LbL) deposition technique using poly(sodium-4-styrenesulfonate) and poly-l-lysine as negatively and positively charged polyelectrolytes, respectively. Interferometric reflectance spectroscopy utilized to observe the optical properties of pAAO during LbL deposition shows that the deposition of the polyelectrolyte onto the pore walls increases the net refractive index, thus red-shifting the effective optical thickness (EOT). Upon incubation with proteinase K, a conspicuous blue shift of the EOT is observed, which is attributed to the destabilization of the LbL film upon enzymatic degradation of the poly-l-lysine components. This result is confirmed by scanning electron microscopy results. Finally, as a proof-of-principle, we demonstrate the ability of the label-free pAAO-based biosensing platform to detect the presence of the proteinase K in human wound fluid, highlighting the potential for detection of bacterial infections in chronic wounds.

  14. The efficiacy of bismuth subnitrate against genotoxicity and oxidative stress induced by aluminum sulphate.

    PubMed

    Turkez, Hasan; Geyikoglu, Fatime

    2011-03-01

    Aluminum (Al) is commonly used in industrial processes and drugs and is thought to induce erythrocytes damage via activation of oxidative stress. Recently, bismuth (Bi)-containing drugs are used in the treatment of various diseases. However, uncertain effects of Bi in blood tissue may participate in the therapeutic efficacy of Bi compounds as related to metals. Hence, this study aimed to determine the roles on human blood cells of the various concentrations of aluminum sulphate (Al(2)(SO(4))(3)) and bismuth subnitrate (BSN), separate and together. With this aim, oxidative status was assessed on erythrocytes by measuring following oxidative stress markers: reduced glutathione (GSH), superoxide dismutase (SOD), glucose-6-phosphate dehydrogenase (G-6-PDH) and catalase (CAT). Two chemicals were tested for their ability to induce cytogenetic change in human lymphocytes using assays for chromosome aberrations (CAs) and sister chromatid exchanges (SCEs). Our results showed that high dose of Al(2)(SO(4))(3) (20 µg/mL) caused oxidative stress and increased CA and SCE frequencies. Whereas, BSN doses did not change CA and SCE rates. Moreover, it led to changes of antioxidant capacity at different concentrations. After concomitant treatment with Al(2)(SO(4))(3) and BSN, the effects of BSN doses were different on enzyme activities and decreased the genotoxic damage. However, the high dose of BSN and Al(2)(SO(4))(3) was shown to enhance the frequencies of CAs and SCEs in a synergistic manner. In conclusion, BSN could be effective in the protection against the blood toxicity of Al(2)(SO(4))(3).

  15. Oxidation and growth of Mg thin films on Ru(001)

    NASA Astrophysics Data System (ADS)

    Huang, H. H.; Jiang, X.; Siew, H. L.; Chin, W. S.; Sim, W. S.; Xu, G. Q.

    1999-08-01

    The oxidation and growth of ultra-thin Mg films on a Ru(001) substrate have been studied using X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS) in the temperature range of 300-1500 K. Our results suggest that the growth of Mg thin films follows a layer-by-layer mode. Upon oxygen adsorption at 300 K, two O 1s peaks were detected on the Mg film. The peak at 532.2-532.6 eV could be attributed to either dioxygen or partially reduced species (O δ-, δ<2), whereas that at 530.1-530.6 eV is due to lattice oxygen in MgO. Annealing of the oxidized film to 800 K causes the conversion of the dioxygen or partially reduced species to the oxide state. Thermal desorption peaks of MgO were directly detected at 1000-1127 and 1350-1380 K, respectively. However, initial evaporation of Mg atoms onto an oxygen pre-adsorbed surface yields a fully oxidized MgO. Further Mg deposition results in the formation of a partially oxidized film with the observation of an O 1s peak at 532.2 eV.

  16. Stress and phase transformation phenomena in oxide films

    SciTech Connect

    Exarhos, G.J.; Hess, N.J.

    1992-04-01

    In situ optical methods are reviewed for characterization of phase transformation processes and evaluation of residual stress in solution- deposited metastable oxide films. Such low density films most often are deposited as disordered phases making them prone to crystallization and attendant densification when subjected to increased temperature and/or applied pressure. Inherent stress imparted during film deposition and its evolution during the transformation are evaluated from phonon frequency shifts seen in Raman spectra (TiO{sub 2}) or from changes in the laser-induced fluorescence emission spectra for films containing rare earth (Sm{sup +3}:Y{sub 3}Al{sub 5}O{sub 12}) or transition metal (Cr{sup +3}:Al{sub 2}O{sub 3}) dopants. The data in combination with measured increases in line intensities intrinsic to the evolving phase are used to follow crystallization processes in thin films. In general, film deposition parameters are found to influence the crystallite ingrowth kinetics and the magnitude of stress and stress relaxation in the film during the transformation. The utility of these methods to probe crystallization phenomena in oxide films will be addressed.

  17. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Lee, Ho Nyung

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.

  18. Growth control of the oxidation state in vanadium oxide thin films

    DOE PAGESBeta

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Lee, Ho Nyung

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.« less

  19. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung; Park, Sungkyun; Egami, Takeshi

    2014-12-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

  20. Controlling Pore Geometries and Interpore Distances of Anodic Aluminum Oxide Templates via Three-Step Anodization.

    PubMed

    Lim, Jin-Hee; Wiley, John B

    2015-01-01

    Porous alumina membranes have attracted much attention because they are very useful templates for the fabrication of various nanostructures important to nanotechnology. However, there are challenges in controlling pore geometries and interpore distances in alumina templates while maintaining highly ordered hexagonal pore structures. Herein, a three-step anodization method is utilized to prepare anodic alumina templates with various pore morphologies (e.g., arched-shape, tree-like, branched-shape) and tunable interpore distances. Such structures are not found within the more traditional alumina templates fabricated by a two-step anodization of aluminum films. The range of interpore distances and pore diameters within the modified templates increases with increasing voltages. In contrast, under decreasing voltages, hexagonally ordered pores can also branch into several pores with smaller sizes and reduced interpore distances. Electrochemical growth of metal nanowires in the modified templates helps to highlight details of the pore structures and which pore channels are active.

  1. Multifunctional oxide thin films for magnetoelectric and electromechanical applications

    NASA Astrophysics Data System (ADS)

    Baek, Seung Hyub

    Epitaxial multifunctional oxide thin films have been extensively researched to understand and exploit a variety of their physical properties. In order to integrate such versatile properties into real devices, there are several critical issues: (1) high-quality thin film growth, (2) fundamental understanding on reliable performance, and (3) device fabrication process preserving functionality of oxides. We have investigated all these issues, employing two different materials: multiferroic BiFeO3 and piezoelectric Pb(Mg1/3 Nb2/3)O3-PbTiO3 (PMN-PT) epitaxial thin films. For the high-quality thin film growth, we have chosen both BiFeO 3 and PMN-PT thin films as a model system. Bi2O3and PbO are the volatile species in these oxides, which makes it hard to grow phase-pure stoichiometric thin films. Because the properties of oxides are sensitive to stoichiometry and defects, it is highly required to fix such volatile elements during thin film growth. We have grown high-quality epitaxial thin films using a fast-rate off-axis sputtering method and vicinal substrates. In addition, we were able to control domain structures of BiFeO3 thin films using vicinal substrates. For the study on the reliability issues in oxides, we have used BiFeO 3 thin films within the framework of magnetoelectric device applications. For reliable magnetoelectric performance of BiFeO3, polarization switching path has to be (1) deterministic, and to be retained along with (2) time---retention, and (3) cycles--- fatigue. We have used monodomain BiFeO3 thin films as a model system. Based on theoretical predictions, we have studied polarization switching paths, and achieved both selective polarization switching and retention problems using island BiFeO3 structure. We have also investigated polarization fatigue, dependent on switching path. For the demonstration of working devices preserving the original functionality of oxides, we have fabricated micro-cantilevers using PMN-PT heterostructure on Si. The

  2. SPH based modelling of oxide and oxide film formation in gravity die castings

    NASA Astrophysics Data System (ADS)

    Ellingsen, K.; Coudert, T.; M'Hamdi, M.

    2015-06-01

    Gravity die casting is an important casting process which has the capability of making complicated, high-integrity components for e.g. the automotive industry. Oxides and oxide films formed during filling affect the cast product quality. The Smoothed particle hydrodynamics (SPH) method is particularly suited to follow complex flows. The SPH method has been used to study filling of a gravity die including the formation and transport of oxides and oxide films for two different filling velocities. A low inlet velocity leads to a higher amount of oxides and oxide films in the casting. The study demonstrates the usefulness of the SPH method for an increased understanding of the effect of different filling procedures on the cast quality.

  3. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, K.C.; Kodas, T.T.

    1994-01-11

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

  4. Reliability and fatigue failure modes of implant-supported aluminum-oxide fixed dental prostheses

    PubMed Central

    Stappert, Christian F. J.; Baldassarri, Marta; Zhang, Yu; Hänssler, Felix; Rekow, Elizabeth D.; Thompson, Van P.

    2012-01-01

    Objectives To investigate failure modes and reliability of implant-supported aluminum-oxide three-unit fixed-dental-prostheses (FDPs) using two different veneering porcelains. Material and methods Thirty-six aluminum-oxide FDP-frameworks were CAD/CAM fabricated and either hand-veneered(n=18) or over-pressed(n=18). All FDPs were adhesively luted to custom-made zirconium-oxide-abutments attached to dental implant fixtures (RP-4×13mm). Specimens were stored in water prior to mechanical testing. A Step-Stress-Accelerated-Life-Test (SSALT) with three load/cycles varying profiles was developed based on initial single-load-to-failure testing. Failure was defined by veneer chipping or chipping in combination with framework fracture. SSALT was performed on each FDP inclined 30° with respect to the applied load direction. For all specimens, failure modes were analyzed using polarized-reflected-light-microscopy and scanning-electron-microscopy (SEM). Reliability was computed using Weibull analysis software (Reliasoft). Results The dominant failure mode for the over-pressed FDPs was buccal chipping of the porcelain in the loading area of the pontic, while hand-veneered specimens failed mainly by combined failure modes in the veneering porcelain, framework and abutments. Chipping of the porcelain occurred earlier in the over-pressed specimens (350 N/85k, load/cycles) than in the hand-veneered (600 N/110k)(profile I). Given a mission at 300 N load and 100k or 200 K cycles the computed Weibull reliability (2-sided at 90.0 % confidence bounds) was 0.99(1/0.98) and 0.99(1/0.98) for hand-veneered FDPs, and 0.45(0.76/0.10) and 0.05(0.63/0) for over-pressed FDPs, respectively. Conclusions In the range of average clinical loads (300–700 N), hand-veneered aluminum-oxide FDPs showed significantly less failure by chipping of the veneer than the over-pressed. Hand-veneered FDPs under fatigue loading failed at loads ≥ 600N. PMID:22093019

  5. Murine pulmonary responses after sub-chronic exposure to aluminum oxide-based nanowhiskers

    PubMed Central

    2012-01-01

    Background Aluminum oxide-based nanowhiskers (AO nanowhiskers) have been used in manufacturing processes as catalyst supports, flame retardants, adsorbents, or in ceramic, metal and plastic composite materials. They are classified as high aspect ratio nanomaterials. Our aim was to assess in vivo toxicity of inhaled AO nanowhisker aerosols. Methods Primary dimensions of AO nanowhiskers specified by manufacturer were 2–4 nm x 2800 nm. The aluminum content found in this nanomaterial was 30% [mixed phase material containing Al(OH)3 and AlOOH]. Male mice (C57Bl/6 J) were exposed to AO nanowhiskers for 4 hrs/day, 5 days/wk for 2 or 4 wks in a dynamic whole body exposure chamber. The whiskers were aerosolized with an acoustical dry aerosol generator that included a grounded metal elutriator and a venturi aspirator to enhance deagglomeration. Average concentration of aerosol in the chamber was 3.3 ± 0.6 mg/m3 and the mobility diameter was 150 ± 1.6 nm. Both groups of mice (2 or 4 wks exposure) were necropsied immediately after the last exposure. Aluminum content in the lung, heart, liver, and spleen was determined. Pulmonary toxicity assessment was performed by evaluation of bronchoalveolar lavage (BAL) fluid (enumeration of total and differential cells, total protein, activity of lactate dehydrogenase [LDH] and cytokines), blood (total and differential cell counts), lung histopathology and pulmonary mechanics. Results Following exposure, mean Al content of lungs was 0.25, 8.10 and 15.37 μg/g lung (dry wt) respectively for sham, 2 wk and 4 wk exposure groups. The number of total cells and macrophages in BAL fluid was 2-times higher in animals exposed for 2 wks and 6-times higher in mice exposed for 4 wks, compared to shams (p < 0.01, p < 0.001, respectively). However no neutrophilic inflammation in BAL fluid was found and neutrophils were below 1% in all groups. No significant differences were found in total protein, activity of LDH, or

  6. Growth of aluminum-free porous oxide layers on titanium and its alloys Ti-6Al-4V and Ti-6Al-7Nb by micro-arc oxidation.

    PubMed

    Duarte, Laís T; Bolfarini, Claudemiro; Biaggio, Sonia R; Rocha-Filho, Romeu C; Nascente, Pedro A P

    2014-08-01

    The growth of oxides on the surfaces of pure Ti and two of its ternary alloys, Ti-6Al-4V and Ti-6Al-7Nb, by micro-arc oxidation (MAO) in a pH 5 phosphate buffer was investigated. The primary aim was to form thick, porous, and aluminum-free oxide layers, because these characteristics favor bonding between bone and metal when the latter is implanted in the human body. On Ti, Ti-6Al-4 V, and Ti-6Al-7Nb, the oxides exhibited breakdown potentials of about 200 V, 130 V, and 140 V, respectively, indicating that the oxide formed on the pure metal is the most stable. The use of the MAO procedure led to the formation of highly porous oxides, with a uniform distribution of pores; the pores varied in size, depending on the anodizing applied voltage and time. Irrespective of the material being anodized, Raman analyses allowed us to determine that the oxide films consisted mainly of the anatase phase of TiO2, and XPS results indicated that this oxide is free of Al and any other alloying element.

  7. Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

    NASA Astrophysics Data System (ADS)

    Liu, Ao; Liu, Guoxia; Zhu, Huihui; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-06-01

    Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications.

  8. Graphene Oxide Transparent Hybrid Film and Its Ultraviolet Shielding Property.

    PubMed

    Xie, Siyuan; Zhao, Jianfeng; Zhang, Bowu; Wang, Ziqiang; Ma, Hongjuan; Yu, Chuhong; Yu, Ming; Li, Linfan; Li, Jingye

    2015-08-19

    Herein, we first reported a facile strategy to prepare functional Poly(vinyl alcohol) (PVA) hybrid film with well ultraviolet (UV) shielding property and visible light transmittance using graphene oxide nanosheets as UV-absorber. The absorbance of ultraviolet light at 300 nm can be up to 97.5%, while the transmittance of visible light at 500 nm keeps 40% plus. This hybrid film can protect protein from UVA light induced photosensitive damage, remarkably. PMID:26226281

  9. In situ Oxidation of Ultrathin Silver Films on Ni(111)

    SciTech Connect

    A Meyer; I Flege; S Senanayake; B Kaemena; R Rettew; F Alamgir; J Falta

    2011-12-31

    Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity-voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to molecular oxygen leads to the destabilization of the Ag film with subsequent relocation of the silver atoms to small few-layer-thick silver patches and concurrent evolution of NiO(111) regions. Subsequent exposure of the oxidized surface to ethylene initiates the transformation of bilayer islands back into monolayer islands, demonstrating at least partial reversibility of the silver relocation process at 600 K.

  10. The Effect of Silicon and Aluminum Additions on the Oxidation Resistance of Lean Chromium Stainless Steels

    SciTech Connect

    Dunning, J.S.; Alman, D.E.; Rawers, J.C.

    2001-09-01

    The effect of Si and Al additions on the oxidation of lean chromium austenitic stainless steels has been studied. A baseline composition of Fe-16Cr-16Ni-2Mn-1Mo was selected to allow combined Si and Al additions of up to 5 wt. pct. in a fully austenitic alloy. The baseline composition was selected using a net Cr equivalent equation to predict the onset of G-ferrite formation in austenite. Cyclic oxidation tests in air for 1000 hours were carried out on alloys with Si only or combined Si and Al additions in the temperature range 700 C to 800 C. Oxidation resistance of alloys with Si only additions were outstanding, particularly at 800 C. It was evident that different rate controlling mechanisms for oxidation were operative at 700 C and 800 C in the Si alloys. In addition, Si alloys pre-oxidized at 800 C, showed a zero weight gain in subsequent testing for 1000 hours at 700 C. The rate controlling mechanism in alloys with combined Si and Al addition for oxidation at 800 C was also different than alloys with Si only. SEM and ESCA analysis of the oxide films and base material at the oxide/base metal interface were conducted to study potential rate controlling mechanisms.

  11. Oxidation Behavior of In-Flight Molten Aluminum Droplets in the Twin-Wire Electric Arc Thermal Spray Process

    SciTech Connect

    Donna Post Guillen; Brian G. Williams

    2005-05-01

    This paper examines the in-flight oxidation of molten aluminum sprayed in air using the twin-wire electric arc (TWEA) thermal spray process. The oxidation reaction of aluminum in air is highly exothermic and is represented by a heat generation term in the energy balance. Aerodynamic shear at the droplet surface enhances the amount of in-flight oxidation by: (1) promoting entrainment and mixing of the surface oxides within the droplet, and (2) causing a continuous heat generation effect that increases droplet temperature over that of a droplet without internal circulation. This continual source of heat input keeps the droplets in a liquid state during flight. A linear rate law based on the Mott-Cabrera theory was used to estimate the growth of the surface oxide layer formed during droplet flight. The calculated oxide volume fraction of an average droplet at impact agrees well with the experimentally determined oxide content for a typical TWEA-sprayed aluminum coating, which ranges from 3.3 to 12.7%. An explanation is provided for the elevated, nearly constant surface temperature (~ 2000 oC) of the droplets during flight to the substrate and shows that the majority of oxide content in the coating is produced during flight, rather than after deposition.

  12. The physical and chemical properties of ultrathin oxide films.

    PubMed

    Street, S C; Xu, C; Goodman, D W

    1997-01-01

    Thin oxide films (from one to tens of monolayers) of SiO2, MgO, NiO, Al2O3, FexOy, and TiO2 supported on refractory metal substrates have been prepared by depositing the oxide metal precursor in a background of oxygen (ca 1 x 10(-5) Torr). The thinness of these oxide samples facilitates investigation by an array of surface techniques, many of which are precluded when applied to the corresponding bulk oxide. Layered and mixed binary oxides have been prepared by sequential synthesis of dissimilar oxide layers or co-deposition of two different oxides. Recent work has shown that the underlying oxide substrate can markedly influence the electronic and chemical properties of the overlayer oxide. The structural, electronic, and chemical properties of these ultrathin oxide films have been probed using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (ELS), ion-scattering spectroscopy (ISS), high-resolution electron energy loss spectroscopy (HREELS), infrared reflectance absorption spectroscopy (IRAS), temperature-programmed desorption (TPD), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS).

  13. Investigation of solution-processed bismuth-niobium-oxide films

    SciTech Connect

    Inoue, Satoshi; Ariga, Tomoki; Matsumoto, Shin; Onoue, Masatoshi; Miyasako, Takaaki; Tokumitsu, Eisuke; Shimoda, Tatsuya; Chinone, Norimichi; Cho, Yasuo

    2014-10-21

    The characteristics of bismuth-niobium-oxide (BNO) films prepared using a solution process were investigated. The BNO film annealed at 550°C involving three phases: an amorphous phase, Bi₃NbO₇ fluorite microcrystals, and Nb-rich cubic pyrochlore microcrystals. The cubic pyrochlore structure, which was the main phase in this film, has not previously been reported in BNO films. The relative dielectric constant of the BNO film was approximately 140, which is much higher than that of a corresponding film prepared using a conventional vacuum sputtering process. Notably, the cubic pyrochlore microcrystals disappeared with increasing annealing temperature and were replaced with triclinic β-BiNbO₄ crystals at 590°C. The relative dielectric constant also decreased with increasing annealing temperature. Therefore, the high relative dielectric constant of the BNO film annealed at 550°C is thought to result from the BNO cubic pyrochlore structure. In addition, the BNO films annealed at 500°C contained approximately 6.5 atm.% carbon, which was lost at approximately 550°C. This result suggests that the carbon in the BNO film played an important role in the formation of the cubic pyrochlore structure.

  14. High-Temperature, Oxidation-Resistant Thermocouples

    NASA Technical Reports Server (NTRS)

    Smialek, James L.; Gedwill, Michael A.

    1994-01-01

    Aluminum substituted for rhodium, which is scarce and expensive. Electromotive force increases with aluminum content in Pt/Al leg of Pt(Pt/Al) thermocouple. Wires baked longer in aluminizing bed produce larger voltages. Thermocouples containing platinum/aluminum legs used instead of thermocouples of type R in furnaces, heat engines, and chemical reactors. Expecially suited to high-velocity oxidizing environments. Constructed as thin-film sensors on turbine blades and vanes, where pre-oxidation provides insulating film needed between thermocouple legs. Because aluminum content slowly depleted by oxidation, long-term use recommended only where maximum temperature is 1,200 degrees C or less.

  15. Geant4 simulation of zinc oxide nanowires in anodized aluminum oxide template as a low energy X-ray scintillator detector

    NASA Astrophysics Data System (ADS)

    Taheri, Ali; Saramad, Shahyar; Setayeshi, Saeed

    2013-02-01

    In this work, ZnO nanowires in anodized aluminum oxide nanoporous template are proposed as an architecture for development of new generation of scintillator based X-ray imagers. The optical response of crystalline ordered ZnO nanowire arrays in porous anodized aluminum oxide template under 20 keV X-ray illumination is simulated using the Geant4 Monte Carlo code. The results show that anodized aluminum oxide template has a special impact as a light guide to conduct the optical photons induced by X-ray toward the detector thickness and to decrease the light scattering in detector volume. This inexpensive and effective method can significantly improve the spatial resolution in scintillator based X-ray imagers, especially in medical applications.

  16. Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films

    SciTech Connect

    Tateishi, Kazutaka; Okamoto, Koichi Tamada, Kaoru; Funato, Mitsuru; Kawakami, Yoichi

    2015-03-23

    Photoluminescence (PL) from InGaN/GaN quantum wells was highly enhanced by the surface plasmon (SP) resonance on aluminum thin films. The enhancement ratio of green emission reached 80, which was much larger than the previously reported enhancements on silver films. The resulting large enhancement should be attributed to an ∼20-fold enhancement of the excitation efficiency and ∼4-fold enhancement of the emission efficiency by the excitation and emission spectra. The temperature dependence of the PL intensities and the time-resolved PL measurements were also performed to understand the detailed mechanism. We concluded that the resonance between the excitation light and the SP on the Al surface should improve the excitation efficiency, i.e., the light absorption efficiency. This result suggests that the Al films have an extraordinary photon confinement effect, which are unique properties of plasmonics with Al and should be useful for new and wider applications.

  17. Characterization of Nano-scale Aluminum Oxide Transport through Porous Media

    NASA Astrophysics Data System (ADS)

    Norwood, S.; Reynolds, M.; Miao, Z.; Brusseau, M. L.; Johnson, G. R.

    2011-12-01

    Colloidal material (including that in the nanoparticle size range) is naturally present in most subsurface environments. Mobilization of these colloidal materials via particle disaggregation may occur through abrupt changes in flow rate and/or via chemical perturbations, such as rapid changes in ionic strength or solution pH. While concentrations of natural colloidal materials in the subsurface are typically small, those concentrations may be greatly increased at contaminated sites such as following the application of metal oxides for groundwater remediation efforts. Additionally, while land application of biosolids has become common practice in the United States as an alternative to industrial fertilizers, biosolids have been shown to contain a significant fraction of organic and inorganic nano-scale colloidal materials such as oxides of iron, titanium, and aluminum. Given their reactivity and small size, there are many questions concerning the potential migration of nano-scale colloidal materials through the soil column and their potential participation in the facilitated transport of contaminants, such as heavy metals and emerging pollutants. The purpose of this study was to investigate the transport behavior of aluminum oxide (Al2O3) nanoparticles through porous media. The impacts of pH, ionic strength, pore-water velocity (i.e., residence time), and aqueous-phase concentration on transport was investigated. All experiments were conducted with large injection pulses to fully characterize the impact of long-term retention and transport behavior relevant for natural systems wherein multiple retention processes may be operative. The results indicate that the observed nonideal transport behavior of the nano-scale colloids is influenced by multiple retention mechanisms/processes. Given the ubiquitous nature of these nano-scale colloids in the environment, a clear understanding of their transport and fate is necessary in further resolving the potential for

  18. Metal-organic chemical vapor deposition of cerium oxide, gallium-indium-oxide, and magnesium oxide thin films: Precursor design, film growth, and film characterization

    NASA Astrophysics Data System (ADS)

    Edleman, Nikki Lynn

    A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric cerium, neodymium, gadolinium, and erbium complexes are coordinatively saturated by a versatile, multidentate, ether-functionalized beta-ketoiminate ligand, and complex melting point and volatility characteristics can be tuned by altering the alkyl substituents on the ligand periphery. Direct comparison with lanthanide beta-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO 2 buffer layer films have been grown on (001) YSZ substrates by MOCVD at significantly lower temperatures than previously reported using one of the newly developed cerium precursors. High-quality YBCO films grown on these CeO2 buffer layers by POMBE exhibit very good electrical transport properties. The cerium complex has therefore been explicitly demonstrated to be a stable and volatile precursor and is attractive for low-temperature growth of coated conductor multilayer structures by MOCVD. Gallium-indium-oxide thin films (GaxIn2-xO 3), x = 0.0˜1.1, have been grown by MOCVD using the volatile metal-organic precursors In(dpm)3 and Ga(dpm)3. The films have a homogeneously Ga-substituted, cubic In2O3 microstructure randomly oriented on quartz or heteroepitaxial on (100) YSZ single-crystal substrates. The highest conductivity of the as-grown films is found at x = 0.12. The optical transmission window and absolute transparency of the films rivals or exceeds that of the most transparent conductive oxides known. Reductive annealing results in improved charge transport characteristics with little loss of optical transparency. No significant difference in electrical properties is observed between randomly oriented and heteroepitaxial films, thus arguing that carrier scattering effects at high-angle grain boundaries play a minor role in the film conductivity mechanism

  19. Chemical fabrication of superconducting Y-Ba-Cu oxide films

    NASA Astrophysics Data System (ADS)

    Hussain, A. A.; Sayer, M.

    1992-02-01

    High-Tc superconducting films of Y-Ba-Cu oxide were prepared on 100-plane MgO substrates by a sol-gel method. A procedure is described for preparing a superconducting film using acetate compounds dissolved in salicylic or lactic acids in the presence of ethylene glycol. This solution has superior qualities in terms of homogeneity, viscosity, and stability against atmospheric hydration. The results indicate that the nature of the solvent influences the microstructure and superconducting properties of Y-Ba-Cu-O films. X-ray diffraction analysis reveals that the annealed films are textured and had orthorhombic orientation. A correlation between the crystal structure and the superconducting properties of the Y-Ba-Cu-O films is presented.

  20. Large and pristine films of reduced graphene oxide

    PubMed Central

    Ahn, Sung Il; Kim, Kukjoo; Jung, Jura; Choi, Kyung Cheol

    2015-01-01

    A new self-assembly concept is introduced to form large and pristine films (15 cm in diameter) of reduced graphene oxide (RGO). The resulting film has different degrees of polarity on its two different sides due to the characteristic nature of the self-assembly process. The RGO film can be easily transferred from a glass substrate onto water and a polymer substrate after injection of water molecules between the RGO film and glass substrate using an electric steamer. The RGO film can also be easily patterned into various shapes with a resolution of around ±10 μm by a simple taping method, which is suitable for mass production of printed electronics at low cost. PMID:26689267