Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

NASA Astrophysics Data System (ADS)

Coppedè, Nicola; Valitova, Irina; Mahvash, Farzaneh; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Santato, Clara; Martel, Richard; Cicoira, Fabio

2014-12-01

The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs.

Outlook and emerging semiconducting materials for ambipolar transistors.

PubMed

Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

2014-02-26

Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ambipolar thermoelectric power of chemically-exfoliated RuO2 nanosheets

NASA Astrophysics Data System (ADS)

Kim, Jeongmin; Yoo, Somi; Moon, Hongjae; Kim, Se Yun; Ko, Dong-Su; Roh, Jong Wook; Lee, Wooyoung

2018-01-01

The electrical conductivity and Seebeck coefficient of RuO2 nanosheets are enhanced by metal nanoparticle doping using Ag-acetate solutions. In this study, RuO2 monolayer and bilayer nanosheets exfoliated from layered alkali metal ruthenates are transferred to Si substrates for device fabrication, and the temperature dependence of their conductivity and Seebeck coefficients is investigated. For pristine RuO2 nanosheets, the sign of the Seebeck coefficient changes with temperature from 350-450 K. This indicates that the dominant type of charge carrier is dependent on the temperature, and the RuO2 nanosheets show ambipolar carrier transport behavior. By contrast, the sign of the Seebeck coefficient for Ag nanoparticle-doped RuO2 nanosheets does not change with temperature, indicating that the extra charge carriers from metal nanoparticles promote n-type semiconductor behavior.

Supramolecular gating of ion transport in nanochannels.

PubMed

Kumar, B V V S Pavan; Rao, K Venkata; Sampath, S; George, Subi J; Eswaramoorthy, Muthusamy

2014-11-24

Several covalent strategies towards surface charge-reversal in nanochannels have been reported with the purpose of manipulating ion transport. However, covalent routes lack dynamism, modularity and post-synthetic flexibility, and hence restrict their applicability in different environments. Here, we introduce a facile non-covalent approach towards charge-reversal in nanochannels (<10 nm) using strong charge-transfer interactions between dicationic viologen (acceptor) and trianionic pyranine (donor). The polarity of ion transport was switched from anion selective to ambipolar to cation selective by controlling the extent of viologen bound to the pyranine. We could also regulate the ion transport with respect to pH by selecting a donor with pH-responsive functional groups. The modularity of this approach further allows facile integration of various functional groups capable of responding to stimuli such as light and temperature to modulate the transport of ions as well as molecules. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ambipolar carrier transport properties and molecular packing structure of octahexyl-substituted copper phthalocyanine

NASA Astrophysics Data System (ADS)

Watanabe, Ken; Watanabe, Koichi; Tohnai, Norimitsu; Itani, Hiromichi; Shimizu, Yo; Fujii, Akihiko; Ozaki, Masanori

2018-04-01

The charge carrier mobility of a solution-processable low-molecular-weight organic semiconductor material, i.e., 1,4,8,11,15,18,22,25-octahexylphthalocyanine copper complex (C6PcCu), was investigated by the time-of-flight technique. The anomalous ambipolar carrier mobility was discussed from the viewpoint of the molecular packing structure, which was clarified by single-crystal X-ray structure analysis. In the comparison between the molecular packing structures of C6PcCu and its metal-free-type homologue, it was found that the difference in carrier mobility originates from the rotation of the molecule, which is caused by the steric hindrance due to the introduction of a center metal and the interpenetration of the nonperipheral alkyl chains.

Room Temperature Silicene Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Akinwande, Deji

Silicene, a buckled Si analogue of graphene, holds significant promise for future electronics beyond traditional CMOS. In our predefined experiments via encapsulated delamination with native electrodes approach, silicene devices exhibit an ambipolar charge transport behavior, corroborating theories on Dirac band in Ag-free silicene. Monolayer silicene device has extracted field-effect mobility within the theoretical expectation and ON/OFF ratio greater than monolayer graphene, while multilayer silicene devices show decreased mobility and gate modulation. Air-stability of silicene devices depends on the number of layers of silicene and intrinsic material structure determined by growth temperature. Few or multi-layer silicene devices maintain their ambipolar behavior for days in contrast to minutes time scale for monolayer counterparts under similar conditions. Multilayer silicene grown at different temperatures below 300oC possess different intrinsic structures and yield different electrical property and air-stability. This work suggests a practical prospect to enable more air-stable silicene devices with layer and growth condition control, which can be leveraged for other air-sensitive 2D materials. In addition, we describe quantum and classical transistor device concepts based on silicene and related buckled materials that exploit the 2D topological insulating phenomenon. The transistor device physics offer the potential for ballistic transport that is robust against scattering and can be employed for both charge and spin transport. This work was supported by the ARO.

Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

PubMed

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

2015-08-12

For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

Reversible Conversion of Dominant Polarity in Ambipolar Polymer/Graphene Oxide Hybrids

PubMed Central

Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Ma, Xinlei; Chen, Jihua; Zheng, Zijian; Roy, V. A. L.

2015-01-01

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits. PMID:25801827

Modeling of silicon in femtosecond laser-induced modification regimes: accounting for ambipolar diffusion

NASA Astrophysics Data System (ADS)

Derrien, Thibault J.-Y.; Bulgakova, Nadezhda M.

2017-05-01

During the last decades, femtosecond laser irradiation of materials has led to the emergence of various applications based on functionalization of surfaces at the nano- and microscale. Via inducing a periodic modification on material surfaces (band gap modification, nanostructure formation, crystallization or amorphization), optical and mechanical properties can be tailored, thus turning femtosecond laser to a key technology for development of nanophotonics, bionanoengineering, and nanomechanics. Although modification of semiconductor surfaces with femtosecond laser pulses has been studied for more than two decades, the dynamics of coupling of intense laser light with excited matter remains incompletely understood. In particular, swift formation of a transient overdense electron-hole plasma dynamically modifies optical properties in the material surface layer and induces large gradients of hot charge carriers, resulting in ultrafast charge-transport phenomena. In this work, the dynamics of ultrafast laser excitation of a semiconductor material is studied theoretically on the example of silicon. A special attention is paid to the electron-hole pair dynamics, taking into account ambipolar diffusion effects. The results are compared with previously developed simulation models, and a discussion of the role of charge-carrier dynamics in localization of material modification is provided.

Flat-on ambipolar triphenylamine/C60 nano-stacks formed from the self-organization of a pyramid-sphere-shaped amphiphile.

PubMed

Liang, Wei-Wei; Huang, Chi-Feng; Wu, Kuan-Yi; Wu, San-Lien; Chang, Shu-Ting; Cheng, Yen-Ju; Wang, Chien-Lung

2016-04-21

A giant amphiphile, which is constructed with an amorphous nano-pyramid (triphenylamine, TPA) and a crystalline nano-sphere (C 60 ), was synthesized. Structural characterization indicates that this pyramid-sphere-shaped amphiphile ( TPA-C 60 ) forms a solvent-induced ordered phase, in which the two constituent units self-assemble into alternating stacks of two-dimensional (2D) TPA and C 60 nano-sheets. Due to the complexity of the molecular structure and the amorphous nature of the nano-pyramid, phase formation was driven by intermolecular C 60 -C 60 interactions and the ordered phase could not be reformed from the TPA-C 60 melt. Oriented crystal arrays of TPA-C 60 , which contain flat-on TPA/C 60 nano-stacks, can be obtained via a PDMS-assisted crystallization (PAC) technique. The flat-on dual-channel supramolecular structure of TPA-C 60 delivered ambipolar and balanced charge-transport characteristics with an average μ e of 2.11 × 10 -4 cm 2 V -1 s -1 and μ h of 3.37 × 10 -4 cm 2 V -1 s -1 . The anisotropic charge-transport ability of the pyramid-sphere-shaped amphiphile was further understood based on the lattice structure and the lattice orientation of TPA-C 60 revealed from electron diffraction analyses.

Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids

DOE PAGES

Zhou, Ye; Han, Su -Ting; Sonar, Prashant; ...

2015-03-24

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. Wemore » conclude that this hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.« less

Magneto-transport properties of a random distribution of few-layer graphene patches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iacovella, Fabrice; Mitioglu, Anatolie; Pierre, Mathieu

In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level quantization in high magnetic field constitute robust hallmarks of few-layer graphene films. In the strong disorder limit, however, the magneto-transport properties are best described by a variable-range hopping behaviour. A large negative magneto-conductance is observed at the charge neutrality point, in consistency with localized transport regime.

Intrinsic and extrinsic electrical and thermal transport of bulk black phosphorus

NASA Astrophysics Data System (ADS)

Hu, Sile; Xiang, Junsen; Lv, Meng; Zhang, Jiahao; Zhao, Hengcan; Li, Chunhong; Chen, Genfu; Wang, Wenhong; Sun, Peijie

2018-01-01

We report a comprehensive investigation of the electrical, thermal, and thermoelectric transport properties of bulk single-crystalline black phosphorus in wide temperature (2-300 K) and field (0-9 T) ranges. Electrical transport below T ≈ 250 K is found to be dominated by extrinsic hole-type charge carriers with large mobility exceeding 104 cm2/V s at low temperatures. While thermal transport measurements reveal an enhanced in-plane thermal conductivity maximum κ = 180 W/m K at T ≈ 25 K, it appears still to be largely constrained by extrinsic phonon scattering processes, e.g., the electron-phonon process, in addition to intrinsic umklapp scattering. The thermoelectric power and Nernst effect seem to be strongly influenced by ambipolar transport of charge carriers with opposite signs in at least the high-temperature region above 200 K, which diminishes the thermoelectric power factor of this material. Our results provide a timely update to the transport properties of bulk black phosphorus for future fundamental and applied research.

On the applicability of the standard approaches for evaluating a neoclassical radial electric field in a tokamak edge region

DOE PAGES

Dorf, M. A.; Cohen, R. H.; Simakov, A. N.; ...

2013-08-27

The use of the standard approaches for evaluating a neoclassical radial electric field E r, i.e., the Ampere (or gyro-Poisson) equation, requires accurate calculation of the difference between the gyroaveraged electron and ion particle fluxes (or densities). In the core of a tokamak, the nontrivial difference appears only in high-order corrections to a local Maxwellian distribution due to the intrinsic ambipolarity of particle transport. The evaluation of such high-order corrections may be inconsistent with the accuracy of the standard long wavelength gyrokinetic equation (GKE), thus imposing limitations on the applicability of the standard approaches. However, in the edge of amore » tokamak, charge-exchange collisions with neutrals and prompt ion orbit losses can drive non-intrinsically ambipolar particle fluxes for which a nontrivial (E r-dependent) difference between the electron and ion fluxes appears already in a low order and can be accurately predicted by the long wavelength GKE. As a result, the parameter regimes where the radial electric field dynamics in the tokamak edge region is dominated by the non-intrinsically ambipolar processes, thus allowing for the use of the standard approaches, are discussed.« less

Pfirsch–Schlüter neoclassical heavy impurity transport in a rotating plasma

DOE PAGES

Belli, Emily A.; Candy, Jefferey M.; Angioni, C.

2014-11-07

In this paper, we extend previous analytic theories for the neoclassical transport of a trace heavy impurity in a rotating plasma in the Pfirsch-Schl¨uter regime. The complete diffusive and convective components of the ambipolar particle flux are derived. The solution is valid for arbitrary impurity charge and impurity Mach number and for general geometry. Inclusion of finite main ion temperature gradient effects is shown in the small ion Mach number limit. A simple interpolation formula is derived for the case of high impurity charge and circular geometry. While an enhancement of the diffusion coefficient is found for order one impuritymore » Mach number, a reduction due to the rotation-driven poloidal asymmetry in the density occurs for very large Mach number.« less

Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor

NASA Astrophysics Data System (ADS)

Itoh, Takuro; Toyota, Taro; Higuchi, Hiroyuki; Matsushita, Michio M.; Suzuki, Kentaro; Sugawara, Tadashi

2017-03-01

A tetracyanoquaterthienoquinoid (TCT4Q)-based field effect transistor is characterized by the ambipolar transfer characteristics and the facile shift of the threshold voltage induced by the bias stress. The trapping and detrapping kinetics of charge carriers was investigated in detail by the temperature dependence of the decay of source-drain current (ISD). We found a repeatable formation of a molecular floating gate is derived from a 'charge carrier-and-gate' cycle comprising four stages, trapping of mobile carriers, formation of a floating gate, induction of oppositely charged mobile carriers, and recombination between mobile and trapped carriers to restore the initial state.

Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour

NASA Astrophysics Data System (ADS)

Jain, Prateek; Yadav, Chandan; Agarwal, Amit; Chauhan, Yogesh Singh

2017-08-01

We present a surface potential based analytical model for double gate tunnel field effect transistor (DGTFET) for the current, terminal charges, and terminal capacitances. The model accounts for the effect of the mobile charge in the channel and captures the device physics in depletion as well as in the strong inversion regime. The narrowing of the tunnel barrier in the presence of mobile charges in the channel is incorporated via modeling of the inverse decay length, which is constant under channel depletion condition and bias dependent under inversion condition. To capture the ambipolar current behavior in the model, tunneling at the drain junction is also included. The proposed model is validated against TCAD simulation data and it shows close match with the simulation data.

The expansion of polarization charge layers into magnetized vacuum - Theory and computer simulations

NASA Technical Reports Server (NTRS)

Galvez, Miguel; Borovsky, Joseph E.

1991-01-01

The formation and evolution of polarization charge layers on cylindrical plasma streams moving in vacuum are investigated using analytic theory and 2D electrostatic particle-in-cell computer simulations. It is shown that the behavior of the electron charge layer goes through three stages. An early time expansion is driven by electrostatic repulsion of electrons in the charge layer. At the intermediate stage, the simulations show that the electron-charge-layer expansion is halted by the positively charged plasma stream. Electrons close to the stream are pulled back to the stream and a second electron expansion follows in time. At the late stage, the expansion of the ion charge layer along the magnetic field lines accompanies the electron expansion to form an ambipolar expansion. It is found that the velocities of these electron-ion expansions greatly exceed the velocities of ambipolar expansions which are driven by plasma temperatures.

Solar Wind Access to Lunar Polar Craters: Feedback Between Surface Charging and Plasma Expansion

NASA Technical Reports Server (NTRS)

Zimmerman, M. I.; Farrell, W. M.; Stubbs, T. J.; Halekas, J. S.; Jackson, T. L.

2011-01-01

Determining the plasma environment within permanently shadowed lunar craters is critical to understanding local processes such as surface charging, electrostatic dust transport, volatile sequestration, and space weathering. In order to investigate the nature of this plasma environment, the first two-dimensional kinetic simulations of solar wind expansion into a lunar crater with a self-consistent plasma-surface interaction have been undertaken. The present results reveal how the plasma expansion into a crater couples with the electrically-charged lunar surface to produce a quasi-steady wake structure. In particular, there is a negative feedback between surface charging and ambipolar wake potential that allows an equilibrium to be achieved, with secondary electron emission strongly moderating the process. A range of secondary electron yields is explored, and two distinct limits are highlighted in which either surface charging or ambipoiar expansion is responsible for determining the overall wake structure.

Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C{sub 60} and fabrication of logic gates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Steve; Nam, Ji Hyun; Koo, Ja Hoon

2015-03-09

We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C{sub 60} on top. The addition of C{sub 60} was observed to have two effects in enhancing ambipolar characteristics. First, C{sub 60} served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C{sub 60} itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C{sub 60} ambipolar transistors with gain as high as 24, along with adaptivemore » NAND and NOR logic gates.« less

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

Experimental and Theoretical Demonstration on the Transport Properties of Fused Ring Host Materials for Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Tse, S. C.; So, S. K.; Yeung, M. Y.; Lo, C. F.; Wen, S. W.; Chen, C. H.

2006-01-01

The charge transport properties of three tertiary-butyl (t-Bu) substituted anthracene derivatives (ADN), critical blue host materials for organic light-emitting diodes (OLEDs), have been investigated experimentally and computationally. From time-of-flight (TOF) measurements, all ADN compounds exhibit ambipolar characters. The hole and electron mobilities are in the range (1--5)× 10-7 cm2 V-1 s-1 under an external applied field of about 1 MV cm-1. Un-substituted ADN has the highest carrier mobilities while heavily t-Bu substituted ADN has the least. The electron and hole conducting properties of are consistent with ab initio calculation, which indicates that the frontier orbitals are localized mainly on the anthracene moiety. t-Bu substitutions in ADN increase the hopping path lengths among the molecules and hence reduce the electron and hole mobilities. The results demonstrate that t-Bu substitution is an effective means of engineering the conductivity of organic charge transporter for OLED applications.

Experimental observation of self excited co-rotating multiple vortices in a dusty plasma with inhomogeneous plasma background

NASA Astrophysics Data System (ADS)

Choudhary, Mangilal; Mukherjee, S.; Bandyopadhyay, P.

2017-03-01

We report an experimental observation of multiple co-rotating vortices in an extended dust column in the background of an inhomogeneous diffused plasma. An inductively coupled rf discharge is initiated in the background of argon gas in the source region. This plasma was later found to diffuse into the main experimental chamber. A secondary DC glow discharge plasma is produced to introduce dust particles into the plasma volume. These micron-sized poly-disperse dust particles get charged in the background of the DC plasma and are transported by the ambipolar electric field of the diffused plasma. These transported particles are found to be confined in an electrostatic potential well, where the resultant electric field due to the diffused plasma (ambipolar E-field) and glass wall charging (sheath E-field) holds the micron-sized particles against the gravity. Multiple co-rotating (anti-clockwise) dust vortices are observed in the dust cloud for a particular discharge condition. The transition from multiple vortices to a single dust vortex is observed when input rf power is lowered. The occurrence of these vortices is explained on the basis of the charge gradient of dust particles, which is orthogonal to the ion drag force. The charge gradient is a consequence of the plasma inhomogeneity along the dust cloud length. The detailed nature and the reason for multiple vortices are still under investigation through further experiments; however, preliminary qualitative understanding is discussed based on the characteristic scale length of the dust vortex. There is a characteristic size of the vortex in the dusty plasma; therefore, multiple vortices could possibly be formed in an extended dusty plasma with inhomogeneous plasma background. The experimental results on the vortex motion of particles are compared with a theoretical model and are found to be in close agreement.

Theoretical study of stability and charge-transport properties of coronene molecule and some of its halogenated derivatives: A path to ambipolar organic-based materials?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sancho-García, J. C., E-mail: jc.sancho@ua.es; Pérez-Jiménez, A. J., E-mail: aj.perez@ua.es

2014-10-07

We have carefully investigated the structural and electronic properties of coronene and some of its fluorinated and chlorinated derivatives, including full periphery substitution, as well as the preferred orientation of the non-covalent dimer structures subsequently formed. We have paid particular attention to a set of methodological details, to first obtain single-molecule magnitudes as accurately as possible, including next the use of modern dispersion-corrected methods to tackle the corresponding non-covalently bound dimers. Generally speaking, this class of compounds is expected to self-assembly in neighboring π-stacks with dimer stabilization energies ranging from –20 to –30 kcal mol{sup −1} at close distances around 3.0–3.3more » Å. Then, in a further step, we have also calculated hole and electron transfer rates of some suitable candidates for ambipolar materials, and corresponding charge mobility values, which are known to critically depend on the supramolecular organization of the samples. For coronene and per-fluorinated coronene, we have found high values for their hopping rates, although slightly smaller for the latter due to an increase (decrease) of the reorganization energies (electronic couplings)« less

Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

NASA Astrophysics Data System (ADS)

Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

2014-01-01

An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

Synthesis and application of pyridine-based ambipolar hosts: control of charge balance in organic light emitting devices (OLEDs) by chemical structure modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koech, Phillip K.; Polikarpov, Evgueni; Rainbolt, James E.

2010-11-05

Pyridine-based host materials were synthesized via Grignard metathesis of bromopyridines to provide the required organometallic reagent. The isomeric hosts (4-(9H-carbazol-9-yl)phenyl)(phenyl)(pyridin-3-yl)phosphine oxide (HM-A4), (5-(9H-carbazol-9-yl)pyridin-2-yl)diphenylphosphine oxide (HM-A5), and (5-(diphenylamino)pyridin-2-yl)diphenylphosphine oxide (HM-A6), (4-(diphenylamino)phenyl)(phenyl)(pyridin-3-yl)phosphine oxide (HM-A8) have similar frontier orbital energies. Organic light emitting devices (OLEDs) fabricated using the series of the host materials demonstrate that small structural modification of the host results in significant change in charge transporting ability.

Effect of Polymer Gate Dielectrics on Charge Transport in Carbon Nanotube Network Transistors: Low-k Insulator for Favorable Active Interface.

PubMed

Lee, Seung-Hoon; Xu, Yong; Khim, Dongyoon; Park, Won-Tae; Kim, Dong-Yu; Noh, Yong-Young

2016-11-30

Charge transport in carbon nanotube network transistors strongly depends on the properties of the gate dielectric that is in direct contact with the semiconducting carbon nanotubes. In this work, we investigate the dielectric effects on charge transport in polymer-sorted semiconducting single-walled carbon nanotube field-effect transistors (s-SWNT-FETs) by using three different polymer insulators: A low-permittivity (ε r ) fluoropolymer (CYTOP, ε r = 1.8), poly(methyl methacrylate) (PMMA, ε r = 3.3), and a high-ε r ferroelectric relaxor [P(VDF-TrFE-CTFE), ε r = 14.2]. The s-SWNT-FETs with polymer dielectrics show typical ambipolar charge transport with high ON/OFF ratios (up to ∼10 5 ) and mobilities (hole mobility up to 6.77 cm 2 V -1 s -1 for CYTOP). The s-SWNT-FET with the lowest-k dielectric, CYTOP, exhibits the highest mobility owing to formation of a favorable interface for charge transport, which is confirmed by the lowest activation energies, evaluated by the fluctuation-induced tunneling model (FIT) and the traditional Arrhenius model (E aFIT = 60.2 meV and E aArr = 10 meV). The operational stability of the devices showed a good agreement with the activation energies trend (drain current decay ∼14%, threshold voltage shift ∼0.26 V in p-type regime of CYTOP devices). The poor performance in high-ε r devices is accounted for by a large energetic disorder caused by the randomly oriented dipoles in high-k dielectrics. In conclusion, the low-k dielectric forms a favorable interface with s-SWNTs for efficient charge transport in s-SWNT-FETs.

Naphthodipyrrolidone (NDP) based conjugated polymers with high electron mobility and ambipolar transport properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Haichang; Zhang, Shuo; Mao, Yifan

Two novel donor–acceptor π-conjugated polymers based on naphthodipyrrolidone (NDP) were synthesized and characterized. The polymers possess low band gaps and suitable molecular orbital levels as ambipolar semiconductors. The thin film organic field effect transistor of NDP polymers exhibited ambipolar transport properties with a high electron mobility up to 0.67 cm 2 V –1 s –1. The grazing-incidence wide-angle X-ray scattering (GIWAXS) studies demonstrated that the polymer molecules pack into a long-range-ordered lamellar structure with isotropically oriented crystalline domains. Thermal annealing promoted edge-on lamellar stacking as evidenced by the increased diffraction intensity along the out-of-plane direction. In conclusion, the polymer withmore » NDP and bithiophene units achieved the best edge-on lamellar stacking after thermal annealing, which yielded the best electron transport performance in this work.« less

Naphthodipyrrolidone (NDP) based conjugated polymers with high electron mobility and ambipolar transport properties

DOE PAGES

Zhang, Haichang; Zhang, Shuo; Mao, Yifan; ...

2017-05-12

Two novel donor–acceptor π-conjugated polymers based on naphthodipyrrolidone (NDP) were synthesized and characterized. The polymers possess low band gaps and suitable molecular orbital levels as ambipolar semiconductors. The thin film organic field effect transistor of NDP polymers exhibited ambipolar transport properties with a high electron mobility up to 0.67 cm 2 V –1 s –1. The grazing-incidence wide-angle X-ray scattering (GIWAXS) studies demonstrated that the polymer molecules pack into a long-range-ordered lamellar structure with isotropically oriented crystalline domains. Thermal annealing promoted edge-on lamellar stacking as evidenced by the increased diffraction intensity along the out-of-plane direction. In conclusion, the polymer withmore » NDP and bithiophene units achieved the best edge-on lamellar stacking after thermal annealing, which yielded the best electron transport performance in this work.« less

Electrostatic modulation of the electronic properties of Dirac semimetal Na3Bi thin films

NASA Astrophysics Data System (ADS)

Hellerstedt, Jack; Yudhistira, Indra; Edmonds, Mark T.; Liu, Chang; Collins, James; Adam, Shaffique; Fuhrer, Michael S.

2017-10-01

Large-area thin films of topological Dirac semimetal Na3Bi are grown on amorphous SiO2:Si substrates to realize a field-effect transistor with the doped Si acting as a back gate. As-grown films show charge carrier mobilities exceeding 7 000 cm2/V s and carrier densities below 3 ×1018cm-3 , comparable to the best thin-film Na3Bi . An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. The hole mobility is significantly larger than the electron mobility in Na3Bi which we ascribe to the inverted band structure. When present, these holes dominate the transport properties.

Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors.

PubMed

Li, Hua-Min; Lee, Dae-Yeong; Choi, Min Sup; Qu, Deshun; Liu, Xiaochi; Ra, Chang-Ho; Yoo, Won Jong

2014-02-10

A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS2 and ambipolar WSe2 FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited charge carriers and (ii) at the certain gate voltage due to the optimized barriers for the collection of photo-excited charge carriers at metal contacts. The effective barrier height between Ti/Au and TMDCs was estimated by a low temperature measurement. An ohmic contact behavior and drain-induced barrier lowering (DIBL) were clearly observed in MoS2 FET. In contrast, a Schottky-to-ohmic contact transition was observed in WSe2 FET as the gate voltage increases, due to the change of majority carrier transport from holes to electrons. The gate-dependent barrier modulation effectively controls the carrier transport, demonstrating its great potential in 2D TMDCs for electronic and optoelectronic applications.

N-type organic electrochemical transistors with stability in water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giovannitti, Alexander; Nielsen, Christian B.; Sbircea, Dan -Tiberiu

Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurementsmore » in water show no degradation when tested for 2 h under continuous cycling. Furthermore, this demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.« less

N-type organic electrochemical transistors with stability in water

DOE PAGES

Giovannitti, Alexander; Nielsen, Christian B.; Sbircea, Dan -Tiberiu; ...

2016-10-07

Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurementsmore » in water show no degradation when tested for 2 h under continuous cycling. Furthermore, this demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.« less

A new design approach for enhancement of DC/RF characteristics with improved ambipolar conduction of charge plasma TFET: proposal, and optimization

NASA Astrophysics Data System (ADS)

Aslam, Mohd.; Sharma, Dheeraj; Yadav, Shivendra; Soni, Deepak; Bajaj, Varun

2018-04-01

This article presents a new device structure to suppress ambipolarity with enhanced electrostatic characteristics of charge plasma TFET (CP-TFET). Here, implantation of a metal angle (MA) of low workfunction inside the high-k dielectric (HfO2) layer near source/channel interface gives excellent improvement in DC and RF characteristics of the proposed device. Deposition of MA is advantageous to increase abruptness of source/channel junction for reducing the tunneling barrier. Along with MA placement, the metal electrode, which is placed over the silicon wafer for inducing N+ drain region, is divided into the two parts of low and high workfunctions. The workfunction of the part of metal electrode near the channel region is taken comparatively higher than the other part to restrict the tunneling of holes at drain/channel junction under negative bias (-V_gs) condition. Such concept induces asymmetrical concentration of charge carriers in the drain region, which widens the tunneling barrier at the drain/channel interface. Consequently, the proposed device shows better RF performance along with suppressed ambipolar conduction. Furthermore, reliability of conventional and proposed structures has been tested in terms of linearity. Simultaneously, the effect of workfunction and length variation of MA on the device characteristics is analyzed in optimization section of the article.

Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Verma, Abhishek; Sharma, Dheeraj; Tirkey, Sukeshni; Raad, Bhagwan Ram

2017-11-01

Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide sub-threshold slope below 60 mV/decade (SS ≤ 60 mV/decade) and low leakage current. Despite this, TFETs suffer from ambipolar behavior, lower ON-state current, and poor RF performance. To address these issues, we have introduced drain and gate work function engineering with hetero gate dielectric for the first time in charge plasma based doping-less TFET (DL TFET). In this, the usage of dual work functionality over the drain region significantly reduces the ambipolar behavior of the device by varying the energy barrier at drain/channel interface. Whereas, the presence of dual work function at the gate terminal increases the ON-state current (ION). The combined effect of dual work function at the gate and drain electrode results in the increment of ON-state current (ION) and decrement of ambipolar conduction (Iambi) respectively. Furthermore, the incorporation of hetero gate dielectric along with dual work functionality at the drain and gate electrode provides an overall improvement in the performance of the device in terms of reduction in ambipolarity, threshold voltage and sub-threshold slope along with improved ON-state current and high frequency figures of merit.

Lead iodide perovskite light-emitting field-effect transistor

PubMed Central

Chin, Xin Yu; Cortecchia, Daniele; Yin, Jun; Bruno, Annalisa; Soci, Cesare

2015-01-01

Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature. PMID:26108967

Alterations in ambipolar characteristic of graphene due to adsorption of Escherichia coli bacteria

NASA Astrophysics Data System (ADS)

Mulyana, Yana; Uenuma, Mutsunori; Okamoto, Naofumi; Ishikawa, Yasuaki; Yamashita, Ichiro; Uraoka, Yukiharu

2018-03-01

In order to evaluate the interaction between biomaterials and graphene from the perspective of its ambipolar characteristic, we have investigated the alteration in ambipolarity of graphene-based field effect transistors (G-FET) after the adsorption of Escherichia coli (E. coli) bacteria onto its graphene layer. We confirmed a positive shift in the ambipolar curve of the G-FETs after the adsorption of E. coli, presumably due to the negative charge of the adsorbed E. coli. However, we did not observe any decrease in the electron mobility or conductivity of the G-FETs, which implied that E. coli did not chemically react with the carbon atoms of graphene, nor introduce any damage on the graphene lattice, but were only physically adsorbed onto the graphene surface. These findings may extend the prominence of graphene as a stable yet sensitive material to be fully utilized in future biosensing applications. These results were then compared to those of ferritin adsorption, which is a protein shell and biomaterial like E. coli, and radical oxygen doping onto the graphene surface.

Use of side-chain for rational design of n-type diketopyrrolopyrrole-based conjugated polymers: what did we find out?

PubMed

Kanimozhi, Catherine; Yaacobi-Gross, Nir; Burnett, Edmund K; Briseno, Alejandro L; Anthopoulos, Thomas D; Salzner, Ulrike; Patil, Satish

2014-08-28

The primary role of substituted side chains in organic semiconductors is to increase their solubility in common organic solvents. In the recent past, many literature reports have suggested that the side chains play a critical role in molecular packing and strongly impact the charge transport properties of conjugated polymers. In this work, we have investigated the influence of side-chains on the charge transport behavior of a novel class of diketopyrrolopyrrole (DPP) based alternating copolymers. To investigate the role of side-chains, we prepared four diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP) conjugated polymers with varied side-chains and carried out a systematic study of thin film microstructure and charge transport properties in polymer thin-film transistors (PTFTs). Combining results obtained from grazing incidence X-ray diffraction (GIXD) and charge transport properties in PTFTs, we conclude side-chains have a strong influence on molecular packing, thin film microstructure, and the charge carrier mobility of DPP-DPP copolymers. However, the influence of side-chains on optical properties was moderate. The preferential "edge-on" packing and dominant n-channel behavior with exceptionally high field-effect electron mobility values of >1 cm(2) V(-1) s(-1) were observed by incorporating hydrophilic (triethylene glycol) and hydrophobic side-chains of alternate DPP units. In contrast, moderate electron and hole mobilities were observed by incorporation of branched hydrophobic side-chains. This work clearly demonstrates that the subtle balance between hydrophobicity and hydrophilicity induced by side-chains is a powerful strategy to alter the molecular packing and improve the ambipolar charge transport properties in DPP-DPP based conjugated polymers. Theoretical analysis supports the conclusion that the side-chains influence polymer properties through morphology changes, as there is no effect on the electronic properties in the gas phase. The exceptional electron mobility is at least partially a result of the strong intramolecular conjugation of the donor and acceptor as evidenced by the unusually wide conduction band of the polymer.

Tuning charge balance in PHOLEDs with ambipolar host materials to achieve high efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padmaperuma, Asanga B.; Koech, Phillip K.; Cosimbescu, Lelia

2009-08-27

The efficiency and stability of blue organic light emitting devices (OLEDs) continue to be a primary roadblock to developing organic solid state white lighting. For OLEDs to meet the high power conversion efficiency goal, they will require both close to 100% internal quantum efficiency and low operating voltage in a white light emitting device.1 It is generally accepted that such high quantum efficiency, can only be achieved with the use of organometallic phosphor doped OLEDs. Blue OLEDs are particularly important for solid state lighting. The simplest (and therefore likely the lowest cost) method of generating white light is to downmore » convert part of the emission from a blue light source with a system of external phosphors.2 A second method of generating white light requires the superposition of the light from red, green and blue OLEDs in the correct ratio. Either of these two methods (and indeed any method of generating white light with a high color rendering index) critically depends on a high efficiency blue light component.3 A simple OLED generally consists of a hole-injecting anode, a preferentially hole transporting organic layer (HTL), an emissive layer that contains the recombination zone and ideally transports both holes and electrons, a preferentially electron-transporting layer (ETL) and an electron-injecting cathode. Color in state-of-the-art OLEDs is generated by an organometallic phosphor incorporated by co-sublimation into the emissive layer (EML).4 New materials functioning as hosts, emitters, charge transporting, and charge blocking layers have been developed along with device architectures leading to electrophosphorescent based OLEDs with high quantum efficiencies near the theoretical limit. However, the layers added to the device architecture to enable high quantum efficiencies lead to higher operating voltages and correspondingly lower power efficiencies. Achievement of target luminance power efficiencies will require new strategies for lowering operating voltages, particularly if this is to be achieved in a device that can be manufactured at low cost. To avoid the efficiency losses associated with phosphorescence quenching by back-energy transfer from the dopant onto the host, the triplet excited states of the host material must be higher in energy than the triplet excited state of the dopant.5 This must be accomplished without sacrificing the charge transporting properties of the composite.6 Similar problems limit the efficiency of OLED-based displays, where blue light emitters are the least efficient and least stable. We previously demonstrated the utility of organic phosphine oxide (PO) materials as electron transporting HMs for FIrpic in blue OLEDs.7 However, the high reluctance of PO materials to oxidation and thus, hole injection limits the ability to balance charge injection and transport in the EML without relying on charge transport by the phosphorescent dopant. PO host materials were engineered to transport both electrons and holes in the EML and still maintain high triplet exciton energy to ensure efficient energy transfer to the dopant (Figure 1). There are examples of combining hole transporting moieties (mainly aromatic amines) with electron transport moieties (e.g., oxadiazoles, triazines, boranes)8 to develop new emitter and host materials for small molecule and polymer9 OLEDs. The challenge is to combine the two moieties without lowering the triplet energy of the target molecule. For example, coupling of a dimesitylphenylboryl moiety with a tertiary aromatic amine (FIAMBOT) results in intramolecular electron transfer from the amine to the boron atom through the bridging phenyl. The mesomeric effect of the dimesitylphenylboryl unit acts to extend conjugation and lowers triplet exciton energies (< 2.8 eV) rendering such systems inadequate as ambipolar hosts for blue phosphors.« less

Ambipolar transport of silver nanoparticles decorated graphene oxide field effect transistors

NASA Astrophysics Data System (ADS)

Sarkar, Kalyan Jyoti; Sarkar, K.; Pal, B.; Kumar, Aparabal; Das, Anish; Banerji, P.

2018-05-01

In this article, we report ambipolar field effect transistor (FET) by using graphene oxide (GO) as a gate dielectric material for silver nanoparticles (AgNPs) decorated GO channel layer. GO was synthesized by Hummers' method. The AgNPs were prepared via photochemical reduction of silver nitrate solution by using monoethanolamine as a reducing agent. Morphological properties of channel layer were characterized by Field Effect Scanning Electron Microscopy (FESEM). Fourier Transform Infrared Spectroscopy (FTIR) was carried out to characterize GO thin film. For device fabrication gold (Au) was deposited as source-drain contact and aluminum (Al) was taken as bottom contact. Electrical measurements were performed by back gate configuration. Ambipolar transport behavior was explained from transfer characteristics. A maximum electron mobiliy of 6.65 cm2/Vs and a hole mobility of 2.46 cm2/Vs were extracted from the transfer characteristics. These results suggest that GO is a potential candidate as a gate dielectric material for thin film transistor applications and also provides new insights in GO based research.

Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

NASA Astrophysics Data System (ADS)

Kale, Sumit; Kondekar, Pravin N.

2018-01-01

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

B2.5-Eirene modeling of radial transport in the MAGPIE linear plasma device

NASA Astrophysics Data System (ADS)

Owen, L. W.; Caneses, J. F.; Canik, J.; Lore, J. D.; Corr, C.; Blackwell, B.; Bonnin, X.; Rapp, J.

2017-05-01

Radial transport in helicon heated hydrogen plasmas in the MAGnetized Plasma Interaction Experiment (MAGPIE) is studied with the B2.5-Eirene (SOLPS5.0) code. Radial distributions of plasma density, temperature and ambipolar potential are computed for several magnetic field configurations and compared to double Langmuir probe measurements. Evidence for an unmagnetized ion population is seen in the requirement for a convective pinch term in the continuity equation in order to fit the centrally peaked density profile data. The measured slightly hollow electron temperature profiles are reproduced with combinations of on-axis and edge heating which can be interpreted as helicon and Trivelpiece-Gould wave absorption, respectively. Pressure gradient driven radial charged particle diffusion is chosen to describe the diffusive particle flux since the hollowness of the temperature profiles assists the establishment of on-axis density peaking.

Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires.

PubMed

Jeon, Dae-Young; Pregl, Sebastian; Park, So Jeong; Baraban, Larysa; Cuniberti, Gianaurelio; Mikolajick, Thomas; Weber, Walter M

2015-07-08

Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to their electrical performance and operation mechanism through several electrical parameters extracted from the channel length scaling based method. Especially, the newly suggested current-voltage (I-V) contour map clearly elucidates the unique operation mechanism of the ambipolar SB-TFTs, governed by Schottky-junction between NiSi2 and Si-NW. Further, it reveals for the first-time in SB based FETs the important internal electrostatic coupling between the channel and externally applied voltages. This work provides helpful information for the realization of practical circuits with ambipolar SB-TFTs that can be transferred to different substrate technologies and applications.

Diketopyrrolopyrrole-based π-bridged donor-acceptor polymer for photovoltaic applications.

PubMed

Li, Wenting; Lee, Taegweon; Oh, Soong Ju; Kagan, Cherie R

2011-10-01

We report the synthesis, properties, and photovoltaic applications of a new conjugated copolymer (C12DPP-π-BT) containing a donor group (bithiophene) and an acceptor group (2,5-didodecylpyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione), bridged by a phenyl group. Using cyclic voltammetry, we found the energy levels of C12DPP-π-BT are intermediate to common electron donor and acceptor photovoltaic materials, poly (3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), respectively. Whereas P3HT and PCBM are exclusively electron donating or accepting, we predict C12DPP-π-BT may uniquely serve as either an electron donor or an acceptor when paired with PCBM or P3HT forming junctions with large built-in potentials. We confirmed the ambipolar nature of C12DPP-π-BT in space charge limited current measurements and in C12DPP-π-BT:PCBM and C12DPP-π-BT:P3HT bulk heterojunction solar cells, achieving power conversion efficiencies of 1.67% and 0.84%, respectively, under illumination of AM 1.5G (100 mW/cm(2)). Adding diiodooctane to C12DPP-π-BT:PCBM improved donor-acceptor inter-mixing and film uniformity, and therefore enhanced charge separation and overall device efficiency. Using higher-molecular-weight polymer C12DPP-π-BT in both C12DPP-π-BT:PCBM and C12DPP-π-BT:P3HT devices improved charge transport and hence the performance of the solar cells. In addition, we compared the structural and electronic properties of C12DPP-π-BT:PCBM and C12DPP-π-BT:P3HT blends, representing the materials classes of polymer:fullerene and polymer:polymer blends. In C12DPP-π-BT:PCBM blends, higher short circuit currents were obtained, consistent with faster charge transfer and balanced electron and hole transport, but lower open circuit voltages may be reduced by trap-assisted recombination and interfacial recombination losses. In contrast, C12DPP-π-BT:P3HT blends exhibit higher open circuit voltage, but short circuit currents were limited by charge transfer between the polymers. In conclusion, C12DPP-π-BT is a promising material with intrinsic ambipolar characteristics for organic photovoltaics and may operate as either a donor or acceptor in the design of bulk heterojunction solar cells. © 2011 American Chemical Society

A nonlinear equation for ionic diffusion in a strong binary electrolyte

PubMed Central

Ghosal, Sandip; Chen, Zhen

2010-01-01

The problem of the one-dimensional electro-diffusion of ions in a strong binary electrolyte is considered. The mathematical description, known as the Poisson–Nernst–Planck (PNP) system, consists of a diffusion equation for each species augmented by transport owing to a self-consistent electrostatic field determined by the Poisson equation. This description is also relevant to other important problems in physics, such as electron and hole diffusion across semiconductor junctions and the diffusion of ions in plasmas. If concentrations do not vary appreciably over distances of the order of the Debye length, the Poisson equation can be replaced by the condition of local charge neutrality first introduced by Planck. It can then be shown that both species diffuse at the same rate with a common diffusivity that is intermediate between that of the slow and fast species (ambipolar diffusion). Here, we derive a more general theory by exploiting the ratio of the Debye length to a characteristic length scale as a small asymptotic parameter. It is shown that the concentration of either species may be described by a nonlinear partial differential equation that provides a better approximation than the classical linear equation for ambipolar diffusion, but reduces to it in the appropriate limit. PMID:21818176

Plasma transport in a simulated magnetic-divertor configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strawitch, C. M.

1981-03-01

The transport properties of plasma on magnetic field lines that intersect a conducting plate are studied experimentally in the Wisconsin internal ring D.C. machine. The magnetic geometry is intended to simulate certain aspects of plasma phenomena that may take place in a tokamak divertor. It is found by a variety of measurements that the cross field transport is non-ambipolar; this may have important implications in heat loading considerations in tokamak divertors. The undesirable effects of nonambipolar flow make it preferable to be able to eliminate it. However, we find that though the non-ambipolarity may be reduced, it is difficult tomore » eliminate entirely. The plasma flow velocity parallel to the magnetic field is found to be near the ion acoustic velocity in all cases. The experimental density and electron temperature profiles are compared to the solutions to a one dimensional transport model that is commonly used in divertor theory.« less

Observation of ambipolar switching in a silver nanoparticle single-electron transistor with multiple molecular floating gates

NASA Astrophysics Data System (ADS)

Yamamoto, Makoto; Shinohara, Shuhei; Tamada, Kaoru; Ishii, Hisao; Noguchi, Yutaka

2016-03-01

Ambipolar switching behavior was observed in a silver nanoparticle (AgNP)-based single-electron transistor (SET) with tetra-tert-butyl copper phthalocyanine (ttbCuPc) as a molecular floating gate. Depending on the wavelength of the incident light, the stability diagram shifted to the negative and positive directions along the gate voltage axis. These results were explained by the photoinduced charging of ttbCuPc molecules in the vicinity of AgNPs. Moreover, multiple device states were induced by the light irradiation at a wavelength of 600 nm, suggesting that multiple ttbCuPc molecules individually worked as a floating gate.

Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

PubMed

Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

2015-07-28

High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

Balanced Ambipolar Organic Field-Effect Transistors by Polymer Preaggregation.

PubMed

Janasz, Lukasz; Luczak, Adam; Marszalek, Tomasz; Dupont, Bertrand G R; Jung, Jaroslaw; Ulanski, Jacek; Pisula, Wojciech

2017-06-21

Ambipolar organic field-effect transistors (OFETs) based on heterojunction active films still suffer from an imbalance in the transport of electrons and holes. This problem is related to an uncontrolled phase separation between the donor and acceptor organic semiconductors in the thin films. In this work, we have developed a concept to improve the phase separation in heterojunction transistors to enhance their ambipolar performance. This concept is based on preaggregation of the donor polymer, in this case poly(3-hexylthiophene) (P3HT), before solution mixing with the small-molecular-weight acceptor, phenyl-C61-butyric acid methyl ester (PCBM). The resulting heterojunction transistor morphology consists of self-assembled P3HT fibers embedded in a PCBM matrix, ensuring balanced mobilities reaching 0.01 cm 2 /V s for both holes and electrons. These are the highest mobility values reported so far for ambipolar OFETs based on P3HT/PCBM blends. Preaggregation of the conjugated polymer before fabricating binary blends can be regarded as a general concept for a wider range of semiconducting systems applicable in organic electronic devices.

Lateral and Vertical Organic Transistors

NASA Astrophysics Data System (ADS)

Al-Shadeedi, Akram

An extensive study has been performed to provide a better understanding of the operation principles of doped organic field-effect transistors (OFETs), organic p-i-n diodes, Schottky diodes, and organic permeable base transistors (OPBTs). This has been accomplished by a combination of electrical and structural characterization of these devices. The discussion of doped OFETs focuses on the shift of the threshold voltage due to increased doping concentrations and the generation and transport of minority charge carriers. Doping of pentacene OFETs is achieved by co-evaporation of pentacene with the n-dopant W2(hpp)4. It is found that pentacene thin film are efficiently doped and that a conductivity in the range of 2.6 x 10-6 S cm-1 for 1 wt% to 2.5 x 10-4 S cm-1 for 16 wt% is reached. It is shown that n-doped OFET consisting of an n-doped channel and n-doped contacts are ambipolar. This behavior is surprising, as n-doping the contacts should suppress direct injection of minority charge carriers (holes). It was proposed that minority charge carrier injection and hence the ambipolar characteristic of n-doped OFETs can be explained by Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. It is shown that the electric field in this layer is indeed in the range of the breakdown field of pentacene based p-i-n Zener homodiodes. Doping the channel has a profound influence on the onset voltage of minority (hole) conduction. The onset voltage can be shifted by lightly n-doping the channel. The shift of onset voltage can be explained by two mechanisms: first, due to a larger voltage that has to be applied to the gate in order to fully deplete the n-doped layer. Second, it can be attributed to an increase in hole trapping by inactive dopants. Moreover, it has been shown that the threshold voltage of majority (electron) conduction is shifted by an increase in the doping concentration, and that the ambipolar OFETs can be turned into unipolar OFETs at high doping concentrations. In subsequent chapters, the working mechanisms of OPBTs are discussed. OPBTs consist of two Schottky diodes (top and bottom diode), and the charge transport in these C60-based Schottky diodes is studied first. Two transport regimes can be distinguished in forward direction - injection limited currents (ILCs) and space charge limited currents (SCLCs). It is found that the current increases exponentially with applied voltage in the ILC regime and depends quadratically on the applied voltage in the SCLC regime. Furthermore, it is observed that the forward and backward currents of the Schottky diode are increased by decreasing the C60 layer thickness, increasing the active area, and increasing the temperature. Furthermore, in order to reach a high performance, various treatments have been applied. Air exposure, a variation of the thickness of the top electrode, as well as annealing of the diodes are used to optimize the diodes. OPBTs are processed by using the semiconductor C60 due its high charge carrier mobility and good film-forming properties. Again, the working mechanism of OPBTs is studied by electrical characterization (base-sweep measurements and output characteristics). To achieve a high performance of OPBTs, various treatments and techniques have been applied. The annealing of the OPBTs after fabrication changes the morphology of the base electrode. Thus, openings (pinholes) are formed in the base electrode, which enables a high current transfer from the upper to lower semiconductor layer. The formation of openings is proved by analyzing SEM and TEM image of the base electrode. Adding a doped layer at the emitter is another process to optimize the OPBTs. The doped layer ensures a high charge carrier injection at the emitter, leading to a high transmission and current gain. Furthermore, it has been observed that the ON/OFF ratio and transconductance of OPBTs increases by decreasing their active area. A very high transconductance gm of 37 S/cm2 is reached, which has the potential to boost the switching speed of organic transistors to 5 MHz. Furthermore, it is shown that the base electrode thickness is an essential parameter for OPBTs. The current gain beta decreases by increasing thickness of base electrode, whereas the ON/OFF ratio increases for thicker base electrodes.

Solution-Processable Balanced Ambipolar Field-Effect Transistors Based on Carbonyl-Regulated Copolymers.

PubMed

Yang, Chengdong; Fang, Renren; Yang, Xiongfa; Chen, Ru; Gao, Jianhua; Fan, Hanghong; Li, Hongxiang; Hu, Wenping

2018-04-04

It is very important to develop ambipolar field effect transistors to construct complementary circuits. To obtain balanced hole- and electron-transport properties, one of the key issues is to regulate the energy levels of the frontier orbitals of the semiconductor materials by structural tailoring, so that they match well with the electrode Fermi levels. Five conjugated copolymers were synthesized and exhibited low LUMO energy levels and narrow bandgaps on account of the strong electron-withdrawing effect of the carbonyl groups. Polymer thin film transistors were prepared by using a solution method and exhibited high and balanced hole and electron mobility of up to 0.46 cm 2  V -1  s -1 , which suggested that these copolymers are promising ambipolar semiconductor materials. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel organic semiconductors and a high capacitance gate dielectric for organic thin film transistors

NASA Astrophysics Data System (ADS)

Cai, Xiuyu

2007-12-01

Organic semiconductors are attracting more and more interest as a promising set of materials in the field of electronics research. This thesis focused on several new organic semiconductors and a novel high-kappa dielectric thin film (SrTiO3), which are two essential parts in Organic Thin Film Transistors (OTFTs). Structure and morphology of thin films of tricyanovinyl capped oligothiophenes were studied using atomic force microscopy and x-ray diffraction. Thin film transistors of one compound exhibited a reasonable electron mobility of 0.02 cm2/Vs. Temperature dependent measurements on the thin film transistor based on this compound revealed shallow trap states that were interpreted in terms of a multiple trap and release model. Moreover, inversion of the majority charge carrier type from electrons to holes was observed when the number of oligothiophene rings increased to six and ambipolar transport behavior was observed for tricyanovinyl sexithiophene. Another interesting organic semiconductor compound is the fluoalkylquarterthiophene, which showed ambipolar transport and large hysteresis in the transfer curve. Due to the bistable state at floating gate, the thin film transistor was exploited to study non-volatile floating gate memory effects. The temperature dependence of the retention time for this memory device revealed that the electron trapping was an activated process. Following the earlier work on hybrid acene-thiophene organic semiconductors, new compounds with similar structure were studied to reveal the mechanism of the air-stability exhibited by some compounds. They all formed highly crystalline thin films and showed reasonable device performances which are well correlated with the molecular structures, thin film microstructures, and solid state packing. The most air-stable compound had no observable degradation with exposure to air for 15 months. SrTiO3 was developed to be employed in OTFTs. Optimization of thin film growth was performed using reactive sputtering growth. Excellent SrTiO3 epitaixal thin film growth was revealed on conductive SrTiO 3:Nb substrates. A maximum charge carrier density of 1014 cm-2 was obtained based on pentacene and perylene diimide thin film transistors. Some new physical phenomena, such as step-like transfer characteristic curve and negative transconductance, were observed at such high field effect induced charge carrier density.

Ambipolar surface state thermoelectric power of topological insulator Bi2Se3.

PubMed

Kim, Dohun; Syers, Paul; Butch, Nicholas P; Paglione, Johnpierre; Fuhrer, Michael S

2014-01-01

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near the charge neutrality point and at low temperatures, the gate-dependent thermoelectric power follows the semiclassical Mott relation using the expected surface state density of states but is larger than expected at high electron doping, possibly reflecting a large density of states in the bulk gap. The thermoelectric power factor shows significant enhancement near the electron-hole puddle carrier density ∼0.5 × 10(12) cm(-2) per surface at all temperatures. Together with the expected reduction of lattice thermal conductivity in low-dimensional structures, the results demonstrate that nanostructuring and Fermi level tuning of three-dimensional topological insulators can be promising routes to realize efficient thermoelectric devices.

Magnetic-flutter-induced pedestal plasma transport

NASA Astrophysics Data System (ADS)

Callen, J. D.; Hegna, C. C.; Cole, A. J.

2013-11-01

Plasma toroidal rotation can limit reconnection of externally applied resonant magnetic perturbation (RMP) fields δB on rational magnetic flux surfaces. Hence it causes the induced radial perturbations δBρ to be small there, thereby inhibiting magnetic island formation and stochasticity at the top of pedestals in high (H-mode) confinement tokamak plasmas. However, the δBρs induced by RMPs increase away from rational surfaces and are shown to induce significant sinusoidal radial motion (flutter) of magnetic field lines with a radial extent that varies linearly with δBρ and inversely with distance from the rational surface because of the magnetic shear. This produces a radial electron thermal diffusivity that is (1/2)(δBρ/B0)2 times a kinetically derived, electron-collision-induced, magnetic-shear-reduced, effective parallel electron thermal diffusivity in the absence of magnetic stochasticity. These low collisionality flutter-induced transport processes and thin magnetic island effects are shown to be highly peaked in the vicinity of rational surfaces at the top of low collisionality pedestals. However, the smaller but finite level of magnetic-flutter-induced electron heat transport midway between rational surfaces is the primary factor that determines the electron temperature difference between rational surfaces at the pedestal top. The magnetic-flutter-induced non-ambipolar electron density transport can be large enough to push the plasma toward an electron density transport root. Requiring ambipolar density transport is shown to determine the radial electric field, the plasma toroidal rotation (via radial force balance), a reduced electron thermal diffusivity and increased ambipolar density transport in the pedestal. At high collisionality the various flutter effects are less strongly peaked at rational surfaces and generally less significant. They are thus less likely to exhibit flutter-induced resonant behaviour and transition toward an electron transport root. Magnetic-flutter-induced plasma transport processes provide a new paradigm for developing an understanding of how RMPs modify the pedestal structure to stabilize peeling-ballooning modes and thereby suppress edge localized modes in low collisionality tokamak H-mode plasmas.

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

PubMed Central

Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P.

2014-01-01

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials. PMID:24810663

Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating.

PubMed

Saito, Yu; Iwasa, Yoshihiro

2015-03-24

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of ∼5 × 10(3). The band gap was determined as ≅0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ∼190 cm(2)/(V s) at 170 K, which is 1 order of magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of ∼10(14) cm(-2), an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

NASA Astrophysics Data System (ADS)

Ji, Hyunjin; Lee, Gwanmu; Joo, Min-Kyu; Yun, Yoojoo; Yi, Hojoon; Park, Ji-Hoon; Suh, Dongseok; Lim, Seong Chu

2017-05-01

The correlation between the channel thickness and the carrier mobility is investigated by conducting static and low frequency (LF) noise characterization for ambipolar carriers in multilayer MoTe2 transistors. For channel thicknesses in the range of 5-15 nm, both the low-field carrier mobility and the Coulomb-scattering-limited carrier mobility (μC) are maximal at a thickness of ˜10 nm. For LF noise, the interplay of interface trap density (NST), which was minimal at ˜10 nm, and the interfacial Coulomb scattering parameter (αSC), which decreased up to 10 nm and saturated above 10 nm, explained the mobility (μC) peaked near 10 nm by the carrier fluctuation and charge distribution.

The Plasma Wake Downstream of Lunar Topographic Obstacles: Preliminary Results from 2D Particle Simulations

NASA Technical Reports Server (NTRS)

Zimmerman, Michael I.; Farrell, W. M.; Snubbs, T. J.; Halekas, J. S.

2011-01-01

Anticipating the plasma and electrical environments in permanently shadowed regions (PSRs) of the moon is critical in understanding local processes of space weathering, surface charging, surface chemistry, volatile production and trapping, exo-ion sputtering, and charged dust transport. In the present study, we have employed the open-source XOOPIC code [I] to investigate the effects of solar wind conditions and plasma-surface interactions on the electrical environment in PSRs through fully two-dimensional pattic1e-in-cell simulations. By direct analogy with current understanding of the global lunar wake (e.g., references) deep, near-terminator, shadowed craters are expected to produce plasma "mini-wakes" just leeward of the crater wall. The present results (e.g., Figure I) are in agreement with previous claims that hot electrons rush into the crater void ahead of the heavier ions, fanning a negative cloud of charge. Charge separation along the initial plasma-vacuum interface gives rise to an ambipolar electric field that subsequently accelerates ions into the void. However, the situation is complicated by the presence of the dynamic lunar surface, which develops an electric potential in response to local plasma currents (e.g., Figure Ia). In some regimes, wake structure is clearly affected by the presence of the charged crater floor as it seeks to achieve current balance (i.e. zero net current to the surface).

"Doping" pentacene with sp(2)-phosphorus atoms: towards high performance ambipolar semiconductors.

PubMed

Long, Guankui; Yang, Xuan; Chen, Wangqiao; Zhang, Mingtao; Zhao, Yang; Chen, Yongsheng; Zhang, Qichun

2016-01-28

Recent research progress in black phosphorus sheets strongly encourages us to employ pentacene as a parent system to systematically investigate how the "doping" of sp(2)-phosphorus atoms onto the backbone of pentacene influences its optical and charge transport properties. Our theoretical investigations proved that increasing the contribution of the pz atomic orbital of the sp(2)-phosphorus to the frontier molecular orbital of phosphapentacenes could significantly decrease both hole and electron reorganization energies and dramatically red-shift the absorption of pentacene. The record smallest hole and electron reorganization energies of 69.80 and 95.74 meV for heteropentacene derivatives were obtained. These results suggest that phosphapentacenes (or phosphaacenes) could be potential promising candidates to achieve both higher and balanced mobilities in organic field effect transistors and realize a better power conversion efficiency in organic photovoltaics.

Stefan-Maxwell Relations and Heat Flux with Anisotropic Transport Coefficients for Ionized Gases in a Magnetic Field with Application to the Problem of Ambipolar Diffusion

NASA Astrophysics Data System (ADS)

Kolesnichenko, A. V.; Marov, M. Ya.

2018-01-01

The defining relations for the thermodynamic diffusion and heat fluxes in a multicomponent, partially ionized gas mixture in an external electromagnetic field have been obtained by the methods of the kinetic theory. Generalized Stefan-Maxwell relations and algebraic equations for anisotropic transport coefficients (the multicomponent diffusion, thermal diffusion, electric and thermoelectric conductivity coefficients as well as the thermal diffusion ratios) associated with diffusion-thermal processes have been derived. The defining second-order equations are derived by the Chapman-Enskog procedure using Sonine polynomial expansions. The modified Stefan-Maxwell relations are used for the description of ambipolar diffusion in the Earth's ionospheric plasma (in the F region) composed of electrons, ions of many species, and neutral particles in a strong electromagnetic field.

Highly Luminescent 2D-Type Slab Crystals Based on a Molecular Charge-Transfer Complex as Promising Organic Light-Emitting Transistor Materials.

PubMed

Park, Sang Kyu; Kim, Jin Hong; Ohto, Tatsuhiko; Yamada, Ryo; Jones, Andrew O F; Whang, Dong Ryeol; Cho, Illhun; Oh, Sangyoon; Hong, Seung Hwa; Kwon, Ji Eon; Kim, Jong H; Olivier, Yoann; Fischer, Roland; Resel, Roland; Gierschner, Johannes; Tada, Hirokazu; Park, Soo Young

2017-09-01

A new 2:1 donor (D):acceptor (A) mixed-stacked charge-transfer (CT) cocrystal comprising isometrically structured dicyanodistyrylbenzene-based D and A molecules is designed and synthesized. Uniform 2D-type morphology is manifested by the exquisite interplay of intermolecular interactions. In addition to its appealing structural features, unique optoelectronic properties are unveiled. Exceptionally high photoluminescence quantum yield (Φ F ≈ 60%) is realized by non-negligible oscillator strength of the S 1 transition, and rigidified 2D-type structure. Moreover, this luminescent 2D-type CT crystal exhibits balanced ambipolar transport (µ h and µ e of ≈10 -4 cm 2 V -1 s -1 ). As a consequence of such unique optoelectronic characteristics, the first CT electroluminescence is demonstrated in a single active-layered organic light-emitting transistor (OLET) device. The external quantum efficiency of this OLET is as high as 1.5% to suggest a promising potential of luminescent mixed-stacked CT cocrystals in OLET applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Donor-acceptor cocrystal based on hexakis(alkoxy)triphenylene and perylenediimide derivatives with an ambipolar transporting property.

PubMed

Su, Yajun; Li, Yan; Liu, Jiangang; Xing, Rubo; Han, Yanchun

2015-02-07

An organic donor-acceptor cocrystal with an ambipolar transporting property was constructed based on N,N'-bis(1-ethylpropyl)-perylene-3,4,9,10-tetracarboxylic diimide (EP-PDI) and 2,3,6,7,10,11-hexakis-(hexyloxy)-triphenylene (H6TP). The cocrystal with an alternating stacking of H6TP and EP-PDI molecules was formed through both drop-casting and spin-coating processes, especially at the optimized ratios of H6TP/EP-PDI (2/1, 1/1). The formation of the cocrystal was driven by the strong π-π interaction and the weaker steric hindrance, resulting from the smaller side groups, between the donor and acceptor molecules. Field effect transistors (FETs) based on the H6TP/EP-PDI cocrystal exhibited relatively balanced hole/electron transport, with a hole mobility of 1.14 × 10(-3) cm(2) V(-1) s(-1) and an electron mobility of 1.40 × 10(-3) cm(2) V(-1) s(-1).

Rf-assisted current startup in the Fusion Engineering Device (FED)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.; Peng, Y.K.M.; Kammash, T.

1982-08-01

Auxiliary rf heating of electrons before and during the current rise phase in the Fusion Engineering Device is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation 1 to 2 MW of electron cyclotron resonance heating (ECRH) power at approx. 90 GHz is used to create a small volume of high conductivity plasma (T/sub e/ approx. = 100 eV, n/sub e/ approx. = 10/sup 13/ cm/sup -3/) near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sub o/ approx. = 0.2 to 0.4more » m) current channel to be established with a relatively low initial loop voltage (less than or equal to 25 V). During the subsequent plasma expansion and current ramp phase, additional rf power is introduced to reduce volt-second consumption due to plasma resistance. A near classical particle and energy transport model has been developed to estimate the efficiency of electron heating in a currentless toroidal plasma. The model assumes that preferential electron heating at the UHR leads to the formation of an ambipolar sheath potential between the neutral plasma and the conducting vacuum vessel and limiter. The ambipolar electric field (E/sub AMB/) enables the plasma to neutralize itself via poloidal E vector/sub AMB/ x B vector drift. This form of effective rotational transform short-circuits the vertical charge separation and improves particle confinement.« less

Ambipolarity in a tokamak with magnetic field ripple

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hazeltine, R. D.

In view of the recognized importance of electrostatic fields regarding turbulent transport, the radial electric field in a tokamak with magnetic field ripple is reconsidered. Terms in the ambipolarity condition involving the radial derivative of the field are derived from an extended drift-kinetic equation, including effects of second order in the gyroradius. Such terms are of interest in part because of their known importance in rotational relaxation equations for the axisymmetric case. The electric field is found to satisfy a nonlinear differential equation that is universal in a certain sense, and that implies spatial relaxation of the potential to itsmore » conventionally predicted value.« less

Low Mach number fluctuating hydrodynamics for electrolytes

DOE PAGES

Péraud, Jean-Philippe; Nonaka, Andy; Chaudhri, Anuj; ...

2016-11-18

Here, we formulate and study computationally the low Mach number fluctuating hydrodynamic equations for electrolyte solutions. We are also interested in studying transport in mixtures of charged species at the mesoscale, down to scales below the Debye length, where thermal fluctuations have a significant impact on the dynamics. Continuing our previous work on fluctuating hydrodynamics of multicomponent mixtures of incompressible isothermal miscible liquids (A. Donev, et al., Physics of Fluids, 27, 3, 2015), we now include the effect of charged species using a quasielectrostatic approximation. Localized charges create an electric field, which in turn provides additional forcing in the massmore » and momentum equations. Our low Mach number formulation eliminates sound waves from the fully compressible formulation and leads to a more computationally efficient quasi-incompressible formulation. Furthermore, we demonstrate our ability to model saltwater (NaCl) solutions in both equilibrium and nonequilibrium settings. We show that our algorithm is second-order in the deterministic setting, and for length scales much greater than the Debye length gives results consistent with an electroneutral/ambipolar approximation. In the stochastic setting, our model captures the predicted dynamics of equilibrium and nonequilibrium fluctuations. We also identify and model an instability that appears when diffusive mixing occurs in the presence of an applied electric field.« less

Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Picraux, Samuel T; Dayeh, Shadi A

2010-01-01

Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5}more » I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.« less

Toward transparent and self-activated graphene harmonic transponder sensors

NASA Astrophysics Data System (ADS)

Huang, Haiyu Harry; Sakhdari, Maryam; Hajizadegan, Mehdi; Shahini, Ali; Akinwande, Deji; Chen, Pai-Yen

2016-04-01

We propose the concept and design of a transparent, flexible, and self-powered wireless sensor comprising a graphene-based sensor/frequency-modulator circuitry and a graphene antenna. In this all-graphene device, the multilayered-graphene antenna receives the fundamental tone at C band and retransmits the frequency-modulated sensed signal (harmonic tone) at X band. The frequency orthogonality between the received/re-transmitted signals may enable high-performance sensing in severe interference/clutter background. Here, a fully passive, quad-ring frequency multiplier is proposed using graphene field-effect transistors, of which the unique ambipolar charge transports render a frequency doubling effect with conversion gain being chemically sensitive to exposed gas/molecular/chemical/infectious agents. This transparent, light-weight, and self-powered system may potentially benefit a number of wireless sensing and diagnosis applications, particularly for smart contact lenses/glasses and microscope slides that require high optical transparency.

Study of a ternary blend system for bulk heterojunction thin film solar cells

NASA Astrophysics Data System (ADS)

Ahmad, Zubair; Touati, Farid; Shakoor, R. A.; Al-Thani, N. J.

2016-08-01

In this research, we report a bulk heterojunction (BHJ) solar cell consisting of a ternary blend system. Poly(3-hexylthiophene) P3HT is used as a donor and [6,6]-phenyl C61-butyric acid methylester (PCBM) plays the role of acceptor whereas vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine (VOPcPhO) is selected as an ambipolar transport material. The materials are selected and assembled in such a fashion that the generated charge carriers could efficiently be transported rightwards within the blend. The organic BHJ solar cells consist of ITO/PEDOT:PSS/ternary BHJ blend/Al structure. The power conversion efficiencies of the ITO/ PEDOT:PSS/P3HT:PCBM/Al and ITO/PEDOT:PSS/ P3HT:PCBM:VOPcPhO/Al solar cells are found to be 2.3% and 3.4%, respectively. This publication was made possible by PDRA (Grant No. PDRA1-0117-14109) from the Qatar National Research Fund (a member of Qatar Foundation). The findings achieved herein are solely the responsibility of the authors.

Dependence of the Carrier Transport Characteristics on the Buried Layer Thickness in Ambipolar Double-Layer Organic Field-Effect Transistors Investigated by Electrical and Optical Measurements

NASA Astrophysics Data System (ADS)

Zhang, Le; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2013-05-01

By using current-voltage (I-V) measurements and optical modulation spectroscopy, we investigated the dependence of the carrier behaviour on the film thickness of the buried pentacene layer in C60/pentacene ambipolar double-layer organic field-effect transistors (OFETs). It was found that the buried pentacene layer not only acted as a hole transport layer, but also accounted for the properties of the C60/pentacene interface. The hole and electron behaviour exhibited different thickness dependence on the buried pentacene layer, implying the presence of the spatially separated conduction paths. It was suggested that the injected holes transported along the pentacene/gate dielectric interface, which were little affected by the buried pentacene layer thickness or the upper C60 layer; while, the injected electrons accumulated at the C60/pentacene interface, which were sensitive to the interfacial conditions or the buried pentacene layer. Furthermore, it was suggested that the enhanced surface roughness of the buried pentacene layer was responsible for the observed electron behaviour, especially when dpent>10 nm.

Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

PubMed

Wang, Ching-Hua; Incorvia, Jean Anne C; McClellan, Connor J; Yu, Andrew C; Mleczko, Michal J; Pop, Eric; Wong, H-S Philip

2018-05-09

Black phosphorus (BP) is a promising two-dimensional (2D) material for nanoscale transistors, due to its expected higher mobility than other 2D semiconductors. While most studies have reported ambipolar BP with a stronger p-type transport, it is important to fabricate both unipolar p- and n-type transistors for low-power digital circuits. Here, we report unipolar n-type BP transistors with low work function Sc and Er contacts, demonstrating a record high n-type current of 200 μA/μm in 6.5 nm thick BP. Intriguingly, the electrical transport of the as-fabricated, capped devices changes from ambipolar to n-type unipolar behavior after a month at room temperature. Transmission electron microscopy analysis of the contact cross-section reveals an intermixing layer consisting of partly oxidized metal at the interface. This intermixing layer results in a low n-type Schottky barrier between Sc and BP, leading to the unipolar behavior of the BP transistor. This unipolar transport with a suppressed p-type current is favorable for digital logic circuits to ensure a lower off-power consumption.

Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy

PubMed Central

2017-01-01

Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials, have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we have used molecular beam epitaxy (MBE) to grow atomically thin MoSe2 on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates, allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe2. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film. PMID:28530829

Ambipolar Electric Field, Photoelectrons, and Their Role in Atmospheric Escape From Hot Jupiters

NASA Technical Reports Server (NTRS)

Cohen, O.; Glocer, A.

2012-01-01

Atmospheric mass loss from Hot Jupiters can be large due to the close proximity of these planets to their host star and the strong radiation the planetary atmosphere receives. On Earth, a major contribution to the acceleration of atmospheric ions comes from the vertical separation of ions and electrons, and the generation of the ambipolar electric field. This process, known as the "polar wind," is responsible for the transport of ionospheric constituents to Earth's magnetosphere, where they are well observed. The polar wind can also be enhanced by a relatively small fraction of super-thermal electrons (photoelectrons) generated by photoionization.We formulate a simplified calculation of the effect of the ambipolar electric field and the photoelectrons on the ion scale height in a generalized manner. We find that the ion scale height can be increased by a factor of 2-15 due to the polar wind effects. We also estimate a lower limit of an order of magnitude increase of the ion density and the atmospheric mass-loss rate when polar wind effects are included.

ECRH and its effects on neoclassical transport in a stellarator

NASA Astrophysics Data System (ADS)

Seol, Jaechun

The banana center orbit deviates significantly from the magnetic surface due to the symmetry-breaking term in the magnetic field configuration. Energetic electrons can escape the plasma without collision, since the drift speed is proportional to the perpendicular energy of electron and the collision frequency is reduced as the electron energy goes up. A direct loss flux can be generated from energetic electron population in a stellarator. Thus energetic electron populations can substantially modify the neoclassical transport properties in stellarators. A model accounting for this change in transport is developed assuming the presence of electron cyclotron resonance heating (ECRH). The quasilinear diffusion coefficient for second harmonic X-mode ECRH is developed for a bumpy stellarator. Care is taken in accounting for the pitch-angle dependence of the quasilinear diffusion coefficient since application to experiments with narrow resonance zones is of interest. Weakly relativistic effects are considered through the mass effect on the cyclotron frequency. For trapped particles in a three dimensional configuration, collisionless loss zones exist in velocity space. Radio-frequency (rf) waves accelerate trapped electrons into the direct loss zone in bumpy stellarators and produce a direct loss flux. An analytic expression for this loss flux is derived; it is proportional to the rf field strength and the value of the zeroth order distribution function at the minimum speed for collisionless loss. The direct loss flux of electrons is another source of a non-ambipolar particle flux in bumpy stellarators. This additional non-ambipolar flux modifies the ambipolarity equation which generally has multiple roots for the radial electric field. An electron root (large positive Er) is easily obtained if the electrons are in the 1/nu regime and the ions are in the nu regime.

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors

PubMed Central

Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C. P.; Gelinck, Gerwin H.; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2016-01-01

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics. PMID:27762321

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

PubMed

Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C P; Gelinck, Gerwin H; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2016-10-20

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

PubMed

Wang, Cong; Yang, Shengxue; Xiong, Wenqi; Xia, Congxin; Cai, Hui; Chen, Bin; Wang, Xiaoting; Zhang, Xinzheng; Wei, Zhongming; Tongay, Sefaattin; Li, Jingbo; Liu, Qian

2016-10-12

Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe 2 and n-type multilayer WS 2 : (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe 2 /WS 2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

Electron and hole transport in ambipolar, thin film pentacene transistors

NASA Astrophysics Data System (ADS)

Saudari, Sangameshwar R.; Kagan, Cherie R.

2015-01-01

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ˜78 and ˜28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.

Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires.

PubMed

Rieger, Torsten; Zellekens, Patrick; Demarina, Natalia; Hassan, Ali Al; Hackemüller, Franz Josef; Lüth, Hans; Pietsch, Ullrich; Schäpers, Thomas; Grützmacher, Detlev; Lepsa, Mihail Ion

2017-11-30

The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core-shell nanowires grown using molecular beam epitaxy are investigated. Due to the large lattice mismatch between GaAs and InSb of 14%, a transition from island-based to layer-like growth occurs during the formation of the shell. High resolution transmission electron microscopy in combination with geometric phase analyses as well as X-ray diffraction with synchrotron radiation are used to investigate the strain relaxation and prove the existence of different dislocations relaxing the strain on zinc blende and wurtzite core-shell nanowire segments. While on the wurtzite phase only Frank partial dislocations are found, the strain on the zinc blende phase is relaxed by dislocations with perfect, Shockley partial and Frank partial dislocations. Even for ultrathin shells of about 2 nm thickness, the strain caused by the high lattice mismatch between GaAs and InSb is relaxed almost completely. Transfer characteristics of the core-shell nanowires show an ambipolar conductance behavior whose strength strongly depends on the dimensions of the nanowires. The interpretation is given based on an electronic band profile which is calculated for completely relaxed core/shell structures. The peculiarities of the band alignment in this situation implies simultaneously occupied electron and hole channels in the InSb shell. The ambipolar behavior is then explained by the change of carrier concentration in both channels by the gate voltage.

Impurities in a non-axisymmetric plasma. Transport and effect on bootstrap current

DOE PAGES

Mollén, A.; Landreman, M.; Smith, H. M.; ...

2015-11-20

Impurities cause radiation losses and plasma dilution, and in stellarator plasmas the neoclassical ambipolar radial electric field is often unfavorable for avoiding strong impurity peaking. In this work we use a new continuum drift-kinetic solver, the SFINCS code (the Stellarator Fokker-Planck Iterative Neoclassical Conservative Solver) [M. Landreman et al., Phys. Plasmas 21 (2014) 042503] which employs the full linearized Fokker-Planck-Landau operator, to calculate neoclassical impurity transport coefficients for a Wendelstein 7-X (W7-X) magnetic configuration. We compare SFINCS calculations with theoretical asymptotes in the high collisionality limit. We observe and explain a 1/nu-scaling of the inter-species radial transport coefficient at lowmore » collisionality, arising due to the field term in the inter-species collision operator, and which is not found with simplified collision models even when momentum correction is applied. However, this type of scaling disappears if a radial electric field is present. We use SFINCS to analyze how the impurity content affects the neoclassical impurity dynamics and the bootstrap current. We show that a change in plasma effective charge Z eff of order unity can affect the bootstrap current enough to cause a deviation in the divertor strike point locations.« less

Fused thiophene and its periphery fluorinated substitution derivatives: a theoretical study for organic semiconductors

NASA Astrophysics Data System (ADS)

Wei, Hui-Ling; Shi, Ya-Rui; Liu, Yu-Fang

2015-06-01

A series of phenyl end-capped derivatives of benzo[d,d‧]thieno[3,2-b4,5- b‧]dithiophene (BTDT) with periphery-fluorinated substitutions (PFS) were systematically investigated by using density functional theory (DFT) combined with the Marcus-Hush electron transfer theory. The substituting effects of PFS were discussed. Compared with the original compounds, (i) the PFS compounds have a relatively higher efficiency of charge transport, lower barriers of electron injection, and larger HOMO-LUMO gaps; (ii) the air-stability and the device performance are enhanced by PFS; and (iii) the HOMO-LUMO transitions in the absorption spectrum of the PFS compounds show an obvious blue-shift trend. The perfluorophenylbisbenzo[d, d‧]thieno[3,2-b4,5-b‧]dithiophene (BpF-BTDT) is found to be the most stable and most effective compound in charge transport among the investigated compounds, and it is suggested as an ambipolar semiconducting material. The results of electronic coupling of the bisbenzo[d, d‧]thieno[3,2-b 4,5- b‧]dithiophene (BBTDT) derivatives show that the orbital interaction is mainly contributed by the neighboring molecule in the two dimensional (2D) layer. The PFS compounds have lower oxidization potential, ionization potential, and electron affinity values than the corresponding original ones, which suggest that fluorination can enhance the performance of the thiophene-based organic solar cells. These findings provide a better understanding of the PFS effects on organic semiconductors and may help to design high-performance semiconductor materials.

Donor-acceptor cocrystal based on hexakis(alkoxy)triphenylene and perylenediimide derivatives with an ambipolar transporting property

NASA Astrophysics Data System (ADS)

Su, Yajun; Li, Yan; Liu, Jiangang; Xing, Rubo; Han, Yanchun

2015-01-01

An organic donor-acceptor cocrystal with an ambipolar transporting property was constructed based on N,N'-bis(1-ethylpropyl)-perylene-3,4,9,10-tetracarboxylic diimide (EP-PDI) and 2,3,6,7,10,11-hexakis-(hexyloxy)-triphenylene (H6TP). The cocrystal with an alternating stacking of H6TP and EP-PDI molecules was formed through both drop-casting and spin-coating processes, especially at the optimized ratios of H6TP/EP-PDI (2/1, 1/1). The formation of the cocrystal was driven by the strong π-π interaction and the weaker steric hindrance, resulting from the smaller side groups, between the donor and acceptor molecules. Field effect transistors (FETs) based on the H6TP/EP-PDI cocrystal exhibited relatively balanced hole/electron transport, with a hole mobility of 1.14 × 10-3 cm2 V-1 s-1 and an electron mobility of 1.40 × 10-3 cm2 V-1 s-1.An organic donor-acceptor cocrystal with an ambipolar transporting property was constructed based on N,N'-bis(1-ethylpropyl)-perylene-3,4,9,10-tetracarboxylic diimide (EP-PDI) and 2,3,6,7,10,11-hexakis-(hexyloxy)-triphenylene (H6TP). The cocrystal with an alternating stacking of H6TP and EP-PDI molecules was formed through both drop-casting and spin-coating processes, especially at the optimized ratios of H6TP/EP-PDI (2/1, 1/1). The formation of the cocrystal was driven by the strong π-π interaction and the weaker steric hindrance, resulting from the smaller side groups, between the donor and acceptor molecules. Field effect transistors (FETs) based on the H6TP/EP-PDI cocrystal exhibited relatively balanced hole/electron transport, with a hole mobility of 1.14 × 10-3 cm2 V-1 s-1 and an electron mobility of 1.40 × 10-3 cm2 V-1 s-1. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05915h

Sequence-defined oligo(ortho-arylene) foldamers derived from the benzannulation of ortho(arylene ethynylene)s† †Electronic supplementary information (ESI) available. CCDC 1483959–1483967. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c6sc02520j Click here for additional data file. Click here for additional data file.

PubMed Central

Lehnherr, Dan; Chen, Chen; Pedramrazi, Zahra; DeBlase, Catherine R.; Alzola, Joaquin M.; Keresztes, Ivan; Lobkovsky, Emil B.

2016-01-01

A Cu-catalyzed benzannulation reaction transforms ortho(arylene ethynylene) oligomers into ortho-arylenes. This approach circumvents iterative Suzuki cross-coupling reactions previously used to assemble hindered ortho-arylene backbones. These derivatives form helical folded structures in the solid-state and in solution, as demonstrated by X-ray crystallography and solution-state NMR analysis. DFT calculations of misfolded conformations are correlated with variable-temperature 1H and EXSY NMR to reveal that folding is cooperative and more favorable in halide-substituted naphthalenes. Helical ortho-arylene foldamers with specific aromatic sequences organize functional π-electron systems into arrangements ideal for ambipolar charge transport and show preliminary promise for the surface-mediated synthesis of structurally defined graphene nanoribbons. PMID:28567248

Silicon Nanosheets: Crossover between Multilayer Silicene and Diamond-like Growth Regime.

PubMed

Grazianetti, Carlo; Cinquanta, Eugenio; Tao, Li; De Padova, Paola; Quaresima, Claudio; Ottaviani, Carlo; Akinwande, Deji; Molle, Alessandro

2017-03-28

The structural and electronic properties of nanoscale Si epitaxially grown on Ag(111) can be tuned from a multilayer silicene phase, where the constitutive layers incorporate a mixed sp 2 /sp 3 bonding, to other ordinary Si phases, such as amorphous and diamond-like Si. Based on comparative scanning tunneling microscopy and Raman spectroscopy investigations, a key role in determining the nanoscale Si phase is played by the growth temperature of the epitaxial deposition on Ag(111) substrate and the presence or absence of a single-layer silicene as a seed for the successive growth. Furthermore, when integrated into a field-effect transistor device, multilayer silicene exhibits a characteristic ambipolar charge carrier transport behavior that makes it strikingly different from other conventional Si channels and suggestive of a Dirac-like character of the electronic bands of the crystal. These findings spotlight the interest in multilayer silicene as a different nanoscale Si phase for advanced nanotechnology applications such as ultrascaled nanoelectronics and nanomembranes, as well as for fundamental exploration of quantum properties.

On the generation of solar spicules and Alfvénic waves

NASA Astrophysics Data System (ADS)

Martínez-Sykora, J.; De Pontieu, B.; Hansteen, V. H.; Rouppe van der Voort, L.; Carlsson, M.; Pereira, T. M. D.

2017-06-01

In the lower solar atmosphere, the chromosphere is permeated by jets known as spicules, in which plasma is propelled at speeds of 50 to 150 kilometers per second into the corona. The origin of the spicules is poorly understood, although they are expected to play a role in heating the million-degree corona and are associated with Alfvénic waves that help drive the solar wind. We compare magnetohydrodynamic simulations of spicules with observations from the Interface Region Imaging Spectrograph and the Swedish 1-m Solar Telescope. Spicules are shown to occur when magnetic tension is amplified and transported upward through interactions between ions and neutrals or ambipolar diffusion. The tension is impulsively released to drive flows, heat plasma (through ambipolar diffusion), and generate Alfvénic waves.

Ambipolar-transporting coaxial nanotubes with a tailored molecular graphene–fullerene heterojunction

PubMed Central

Yamamoto, Yohei; Zhang, Guanxin; Jin, Wusong; Fukushima, Takanori; Ishii, Noriyuki; Saeki, Akinori; Seki, Shu; Tagawa, Seiichi; Minari, Takeo; Tsukagoshi, Kazuhito; Aida, Takuzo

2009-01-01

Despite a large steric bulk of C60, a molecular graphene with a covalently linked C60 pendant [hexabenzocoronene (HBC)–C60; 1] self-assembles into a coaxial nanotube whose wall consists of a graphite-like π-stacked HBC array, whereas the nanotube surface is fully covered by a molecular layer of clustering C60. Because of this explicit coaxial configuration, the nanotube exhibits an ambipolar character in the field-effect transistor output [hole mobility (μh) = 9.7 × 10−7 cm2 V−1 s−1; electron mobility (μe) = 1.1 × 10−5 cm2 V−1 s−1] and displays a photovoltaic response upon light illumination. Successful coassembly of 1 and an HBC derivative without C60 (2) allows for tailoring the p/n heterojunction in the nanotube, so that its ambipolar carrier transport property can be optimized for enhancing the open-circuit voltage in the photovoltaic output. As evaluated by an electrodeless method called flash-photolysis time-resolved microwave conductivity technique, the intratubular hole mobility (2.0 cm2 V−1 s−1) of a coassembled nanotube containing 10 mol % of HBC–C60 (1) is as large as the intersheet mobility in graphite. The homotropic nanotube of 2 blended with a soluble C60 derivative [(6,6)-phenyl C61 butyric acid methyl ester] displayed a photovoltaic response with a much different composition dependency, where the largest open-circuit voltage attained was obviously lower than that realized by the coassembly of 1 and 2. PMID:19940243

Elevating the triplet energy levels of dibenzofuran-based ambipolar phosphine oxide hosts for ultralow-voltage-driven efficient blue electrophosphorescence: from D-A to D-π-A systems.

PubMed

Han, Chunmiao; Zhang, Zhensong; Xu, Hui; Li, Jing; Zhao, Yi; Yan, Pengfei; Liu, Shiyong

2013-01-21

A series of donor (D)-π-acceptor (A)-type phosphine-oxide hosts (DBF(x) POPhCz(n)), which were composed of phenylcarbazole, dibenzofuran (DBF), and diphenylphosphine-oxide (DPPO) moieties, were designed and synthesized. Phenyl π-spacer groups were inserted between the carbazolyl and DBF groups, which effectively weakened the charge transfer and triplet-excited-state extension. As the result, the first triplet energy levels (T(1)) of DBF(x)POPhCz(n) are elevated to about 3.0 eV, 0.1 eV higher than their D-A-type analogues. Nevertheless, the electrochemical analysis and DFT calculations demonstrated the ambipolar characteristics of DBF(x)POPhCz(n). The phenyl π spacers hardly influenced the frontier molecular orbital (FMO) energy levels and the carrier-transporting ability of the materials. Therefore, these D-π-A systems are endowed with higher T(1) states, as well as comparable electrical properties to D-A systems. Phosphorescent blue-light-emitting diodes (PHOLEDs) that were based on DBF(x)POPhCz(n) not only inherited the ultralow driving voltages (2.4 V for onset, about 2.8 V at 200 cd m(-2), and <3.4 V at 1000 cd m(-2)) but also had much-improved efficiencies, including about 26 cd A(-1) for current efficiency, 30 Lm W(-1) for power efficiency, and 13% for external quantum efficiency, which were more than twice the values of devices that are based on conventional unipolar host materials. This performance makes DBFDPOPhCz(n) among the best hosts for ultralow-voltage-driven blue PHOLEDs reported so far. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and properties of silicon nanowire devices

NASA Astrophysics Data System (ADS)

Byon, Kumhyo

Silicon nanowire (SiNW) is a very attractive one-dimensional material for future nanoelectronic applications. Reliable control of key field effect transistor (FET) parameters such as conductance, mobility, threshold voltage and on/off ratio is crucial to the applications of SiNW to working logic devices and integrated circuits. In this thesis, we fabricated silicon nanowire field effect transistors (SiNW FETs) and studied the dependence of their electrical transport properties upon various parameters including SiNW growth conditions, post-growth doping, and contact annealing. From these studies, we found how different processes control important FET characteristics. Key accomplishments of this thesis include p-channel enhancement mode FETs, n-channel FETs by post-growth vapor doping and high performance ambipolar devices. In the first part of this work, single crystalline SiNWs were synthesized by thermal evaporation without gold catalysts. FETs were fabricated using both as-grown SiNWs and post-growth n-doped SiNWs. FET from p-type source materials behaves as a p-channel enhancement mode FET which is predominant in logic devices due to its fast operation and low power consumption. Using bismuth vapor, the as-grown SiNWs were doped into n-type materials. The majority carriers in SiNWs can therefore be controlled by proper choice of the vapor phase dopant species. Post-growth doping using vapor phase is applicable to other nanowire systems. In the second part, high performance ambipolar FETs were fabricated. A two step annealing process was used to control the Schottky barrier between SiNW and metal contacts in order to enhance device performance. Initial p-channel SiNW FETs were converted into ambipolar SiNW FETs after contact annealing. Furthermore, significant increases in both on/off ratio and channel mobilities were achieved after contact annealing. Promising device structures to implement ambipolar devices into large scale integrated circuits were proposed. The contributions of this study are to further understanding of the electrical transport properties of SiNWs and to provide optimized processes to fabricate emerging high performance nanoelectronic devices using SiNWs for future generation beyond bulk silicon.

Ringing After a High-Energy Collision: Ambipolar Oscillations During Impact Plasma Expansion

NASA Technical Reports Server (NTRS)

Zimmerman, M. I.; Farrell, W. M.; Stubbs, T. J.

2012-01-01

High-velocity impacts on the Moon and other airless bodies deliver energy and material to the lunar surface and exosphere. The target and i mpactor material may become vaporized and ionized to form a collision al plasma that expands outward and eventually becomes collisionless. In the present work, kinetic simulations of the later collision less stage of impact plasma expansion are performed. Attention is paid to characterizing "ambipolar oscillations" in which thermodynamic distur bances propagate outward to generate "ringing" within the expanding e lectron cloud, which could radiate an electromagnetic signature of lo cal plasma conditions. The process is not unlike a beam-plasma intera ction, with the perturbing electron population in the present case ac ting as a highly thermal "beam" that resonates along the expanding de nsity gradient. Understanding the electromagnetic aspects of impact p lasma expansion could provide insight into the lasting effects of nat ural, impact-generated currents on airless surfaces and charging haza rds to human exploration infrastructure and instrumentation.

Ionization Chemistry and Role of Grains on Non-ideal MHD Effects in Protoplanetary Disks

NASA Astrophysics Data System (ADS)

Xu, Rui; Bai, Xue-Ning; Oberg, Karin I.

2015-01-01

Ionization in protoplanetary disks (PPDs) is one of the key elements for understanding disk chemistry. It also determines the coupling between gas and magnetic fields hence strongly affect PPD gas dynamics. We study the ionization chemistry in the presence of grains in the midplane region of PPDs and its impact on gas conductivity reflected in non-ideal MHD effects including Ohmic resistivity, Hall effect and ambipolar diffusion. We first develop a reduced chemical reaction network from the UMIST database. The reduced network contains much smaller number of species and reactions while yields reliable estimates of the disk ionization level compared with the full network. We further show that grains are likely the dominant charge carrier in the midplane regions of the inner disk, which significantly affects the gas conductivity. In particular, ambipolar diffusion is strongly reduced and the Hall coefficient changes sign in the presence of strong magnetic field. The latter provides a natural mechanism to the saturation of the Hall-shear instability.

Organic Donor-Acceptor Complexes as Novel Organic Semiconductors.

PubMed

Zhang, Jing; Xu, Wei; Sheng, Peng; Zhao, Guangyao; Zhu, Daoben

2017-07-18

Organic donor-acceptor (DA) complexes have attracted wide attention in recent decades, resulting in the rapid development of organic binary system electronics. The design and synthesis of organic DA complexes with a variety of component structures have mainly focused on metallicity (or even superconductivity), emission, or ferroelectricity studies. Further efforts have been made in high-performance electronic investigations. The chemical versatility of organic semiconductors provides DA complexes with a great number of possibilities for semiconducting applications. Organic DA complexes extend the semiconductor family and promote charge separation and transport in organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). In OFETs, the organic complex serves as an active layer across extraordinary charge pathways, ensuring the efficient transport of induced charges. Although an increasing number of organic semiconductors have been reported to exhibit good p- or n-type properties (mobilities higher than 1 or even 10 cm 2 V -1 s -1 ), critical scientific challenges remain in utilizing the advantages of existing semiconductor materials for more and wider applications while maintaining less complicated synthetic or device fabrication processes. DA complex materials have revealed new insight: their unique molecular packing and structure-property relationships. The combination of donors and acceptors could offer practical advantages compared with their unimolecular materials. First, growing crystals of DA complexes with densely packed structures will reduce impurities and traps from the self-assembly process. Second, complexes based on the original structural components could form superior mixture stacking, which can facilitate charge transport depending on the driving force in the coassembly process. Third, the effective use of organic semiconductors can lead to tunable band structures, allowing the operation mode (p- or n-type) of the transistor to be systematically controlled by changing the components. Finally, theoretical calculations based on cocrystals with unique stacking could widen our understanding of structure-property relationships and in turn help us design high-performance semiconductors based on DA complexes. In this Account, we focus on discussing organic DA complexes as a new class of semiconducting materials, including their design, growth methods, packing modes, charge-transport properties, and structure-property relationships. We have also fabricated and investigated devices based on these binary crystals. This interdisciplinary work combines techniques from the fields of self-assembly, crystallography, condensed-matter physics, and theoretical chemistry. Researchers have designed new complex systems, including donor and acceptor compounds that self-assemble in feasible ways into highly ordered cocrystals. We demonstrate that using this crystallization method can easily realize ambipolar or unipolar transport. To further improve device performance, we propose several design strategies, such as using new kinds of donors and acceptors, modulating the energy alignment of the donor (ionization potential, IP) and acceptor (electron affinity, EA) components, and extending the π-conjugated backbones. In addition, we have found that when we use molecular "doping" (2:1 cocrystallization), the charge-transport nature of organic semiconductors can be switched from hole-transport-dominated to electron-transport-dominated. We expect that the formation of cocrystals through the complexation of organic donor and acceptor species will serve as a new strategy to develop semiconductors for organic electronics with superior performances over their corresponding individual components.

Recent Advances in Interface Engineering for Planar Heterojunction Perovskite Solar Cells.

PubMed

Yin, Wei; Pan, Lijia; Yang, Tingbin; Liang, Yongye

2016-06-25

Organic-inorganic hybrid perovskite solar cells are considered as one of the most promising next-generation solar cells due to their advantages of low-cost precursors, high power conversion efficiency (PCE) and easy of processing. In the past few years, the PCEs have climbed from a few to over 20% for perovskite solar cells. Recent developments demonstrate that perovskite exhibits ambipolar semiconducting characteristics, which allows for the construction of planar heterojunction (PHJ) perovskite solar cells. PHJ perovskite solar cells can avoid the use of high-temperature sintered mesoporous metal oxides, enabling simple processing and the fabrication of flexible and tandem perovskite solar cells. In planar heterojunction materials, hole/electron transport layers are introduced between a perovskite film and the anode/cathode. The hole and electron transporting layers are expected to enhance exciton separation, charge transportation and collection. Further, the supporting layer for the perovskite film not only plays an important role in energy-level alignment, but also affects perovskite film morphology, which have a great effect on device performance. In addition, interfacial layers also affect device stability. In this review, recent progress in interfacial engineering for PHJ perovskite solar cells will be reviewed, especially with the molecular interfacial materials. The supporting interfacial layers for the optimization of perovskite films will be systematically reviewed. Finally, the challenges remaining in perovskite solar cells research will be discussed.

Triple-mode single-transistor graphene amplifier and its applications.

PubMed

Yang, Xuebei; Liu, Guanxiong; Balandin, Alexander A; Mohanram, Kartik

2010-10-26

We propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.

Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

NASA Astrophysics Data System (ADS)

Dell'Erba, Giorgio; Luzio, Alessandro; Natali, Dario; Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu; Noh, Yong-Young; Caironi, Mario

2014-04-01

Ambipolar semiconducting polymers, characterized by both high electron (μe) and hole (μh) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μh = 0.29 cm2/V s and μe = 0.001 cm2/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μe = 0.12 cm2/V s and μh = 8 × 10-4 cm2/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

Theoretical investigation of discharge parameters in magnetized radio frequency excited CO2 lasers

NASA Astrophysics Data System (ADS)

Tavassoli, H.; Sohbatzadeh, F.; Latifi, H.

2003-06-01

In the present paper the magnetic field effects on discharge parameters in rf excited CO2 lasers are calculated. A rf generated plasma imbedded in an external, constant, and homogeneous magnetic field is considered. The continuity equation is used to derive the electron density. Quasineutrality condition and ambipolar diffusion are used. Electron attachment coefficient is neglected. Local electric field, local electron density, and thickness of charge layers are derived as a function of distance from the electrodes and magnetic field. The thickness of charge layers in the presence of magnetic field is always smaller than one without the magnetic field. When the magnetic field increases, the electron density increases in all regions of discharge, and the electric field reduces in the charge layers but increases in the middle part of discharge.

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

NASA Technical Reports Server (NTRS)

Lieneweg, U.; Bean, J. C.

1984-01-01

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Fundamental and future prospects of printed ambipolar fluorene-type polymer light-emitting transistors for improved external quantum efficiency, mobility, and emission pattern

NASA Astrophysics Data System (ADS)

Kajii, Hirotake

2018-05-01

In this review, we focus on the improved external quantum efficiency, field-effect mobility, and emission pattern of top-gate-type polymer light-emitting transistors (PLETs) based on ambipolar fluorene-type polymers. A low-temperature, high-efficiency, printable red phosphorescent PLET based on poly(alkylfluorene) with modified alkyl side chains fabricated by a film transfer process is demonstrated. Device fabrication based on oriented films leads to an improved EL intensity owing to the increase in field-effect mobility. There are three factors that affect the transport of carriers, i.e., the energy level, threshold voltage, and mobility of each layer for heterostructure PLETs, which result in various emission patterns such as the line-shaped, multicolor and in-plane emission pattern in the full-channel area between source and drain electrodes. Fundamentals and future prospects in heterostructure devices are discussed and reviewed.

Hydrogen-bonded diketopyrrolopyrrole (DPP) pigments as organic semiconductors

DOE PAGES

Glowacki, Eric Daniel; Coskun, Halime; Blood-Forsythe, Martin A.; ...

2014-10-13

Diketopyrrolopyrroles (DPPs) have recently gained attention as building-blocks for organic semiconducting polymers and small molecules, however the semiconducting properties of their hydrogen-bonded (H-bonded) pigment forms have not been explored. Herein we report on the performance of three archetypical H-bonded DPP pigments, which show ambipolar carrier mobilities in the range 0.01–0.06 cm 2/V s in organic field-effect transistors. Their semiconducting properties are correlated with crystal structure, where an H-bonded crystal lattice supports close and relatively cofacial π–π stacking. To better understand transport in these systems, density functional theory calculations were carried out, indicating theoretical maximum ambipolar mobility values of ~0.3 cmmore » 2/V s. Furthermore, based on these experimental and theoretical results, H-bonded DPPs represent a viable alternative to more established DPP-containing polymers and small molecules where H-bonding is blocked by N-alkylation.« less

A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

PubMed

She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning

2017-02-01

A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Superior Self-Powered Room-Temperature Chemical Sensing with Light-Activated Inorganic Halides Perovskites.

PubMed

Chen, Hongjun; Zhang, Meng; Bo, Renheng; Barugkin, Chog; Zheng, Jianghui; Ma, Qingshan; Huang, Shujuan; Ho-Baillie, Anita W Y; Catchpole, Kylie R; Tricoli, Antonio

2018-02-01

Hybrid halide perovskite is one of the promising light absorber and is intensively investigated for many optoelectronic applications. Here, the first prototype of a self-powered inorganic halides perovskite for chemical gas sensing at room temperature under visible-light irradiation is presented. These devices consist of porous network of CsPbBr 3 (CPB) and can generate an open-circuit voltage of 0.87 V under visible-light irradiation, which can be used to detect various concentrations of O 2 and parts per million concentrations of medically relevant volatile organic compounds such as acetone and ethanol with very quick response and recovery time. It is observed that O 2 gas can passivate the surface trap sites in CPB and the ambipolar charge transport in the perovskite layer results in a distinct sensing mechanism compared with established semiconductors with symmetric electrical response to both oxidizing and reducing gases. The platform of CPB-based gas sensor provides new insights for the emerging area of wearable sensors for personalized and preventive medicine. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A reliable and controllable graphene doping method compatible with current CMOS technology and the demonstration of its device applications

NASA Astrophysics Data System (ADS)

Kim, Seonyeong; Shin, Somyeong; Kim, Taekwang; Du, Hyewon; Song, Minho; Kim, Ki Soo; Cho, Seungmin; Lee, Sang Wook; Seo, Sunae

2017-04-01

The modulation of charge carrier concentration allows us to tune the Fermi level (E F) of graphene thanks to the low electronic density of states near the E F. The introduced metal oxide thin films as well as the modified transfer process can elaborately maneuver the amounts of charge carrier concentration in graphene. The self-encapsulation provides a solution to overcome the stability issues of metal oxide hole dopants. We have manipulated systematic graphene p-n junction structures for electronic or photonic application-compatible doping methods with current semiconducting process technology. We have demonstrated the anticipated transport properties on the designed heterojunction devices with non-destructive doping methods. This mitigates the device architecture limitation imposed in previously known doping methods. Furthermore, we employed E F-modulated graphene source/drain (S/D) electrodes in a low dimensional transition metal dichalcogenide field effect transistor (TMDFET). We have succeeded in fulfilling n-type, ambipolar, or p-type field effect transistors (FETs) by moving around only the graphene work function. Besides, the graphene/transition metal dichalcogenide (TMD) junction in either both p- and n-type transistor reveals linear voltage dependence with the enhanced contact resistance. We accomplished the complete conversion of p-/n-channel transistors with S/D tunable electrodes. The E F modulation using metal oxide facilitates graphene to access state-of-the-art complimentary-metal-oxide-semiconductor (CMOS) technology.

High-Efficiency Fullerene Solar Cells Enabled by a Spontaneously Formed Mesostructured CuSCN-Nanowire Heterointerface.

PubMed

Sit, Wai-Yu; Eisner, Flurin D; Lin, Yen-Hung; Firdaus, Yuliar; Seitkhan, Akmaral; Balawi, Ahmed H; Laquai, Frédéric; Burgess, Claire H; McLachlan, Martyn A; Volonakis, George; Giustino, Feliciano; Anthopoulos, Thomas D

2018-04-01

Fullerenes and their derivatives are widely used as electron acceptors in bulk-heterojunction organic solar cells as they combine high electron mobility with good solubility and miscibility with relevant semiconducting polymers. However, studies on the use of fullerenes as the sole photogeneration and charge-carrier material are scarce. Here, a new type of solution-processed small-molecule solar cell based on the two most commonly used methanofullerenes, namely [6,6]-phenyl-C61-butyric acid methyl ester (PC 60 BM) and [6,6]-phenyl-C71-butyric acid methyl ester (PC 70 BM), as the light absorbing materials, is reported. First, it is shown that both fullerene derivatives exhibit excellent ambipolar charge transport with balanced hole and electron mobilities. When the two derivatives are spin-coated over the wide bandgap p-type semiconductor copper (I) thiocyanate (CuSCN), cells with power conversion efficiency (PCE) of ≈1%, are obtained. Blending the CuSCN with PC 70 BM is shown to increase the performance further yielding cells with an open-circuit voltage of ≈0.93 V and a PCE of 5.4%. Microstructural analysis reveals that the key to this success is the spontaneous formation of a unique mesostructured p-n-like heterointerface between CuSCN and PC 70 BM. The findings pave the way to an exciting new class of single photoactive material based solar cells.

Hall Effect–Mediated Magnetic Flux Transport in Protoplanetary Disks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, Xue-Ning; Stone, James M.

2017-02-10

The global evolution of protoplanetary disks (PPDs) has recently been shown to be largely controlled by the amount of poloidal magnetic flux threading the disk. The amount of magnetic flux must also coevolve with the disk, as a result of magnetic flux transport, a process that is poorly understood. In weakly ionized gas as in PPDs, magnetic flux is largely frozen in the electron fluid, except when resistivity is large. When the disk is largely laminar, we show that the relative drift between the electrons and ions (the Hall drift), and the ions and neutral fluids (ambipolar drift) can playmore » a dominant role on the transport of magnetic flux. Using two-dimensional simulations that incorporate the Hall effect and ambipolar diffusion (AD) with prescribed diffusivities, we show that when large-scale poloidal field is aligned with disk rotation, the Hall effect rapidly drags magnetic flux inward at the midplane region, while it slowly pushes flux outward above/below the midplane. This leads to a highly radially elongated field configuration as a global manifestation of the Hall-shear instability. This field configuration further promotes rapid outward flux transport by AD at the midplane, leading to instability saturation. In quasi-steady state, magnetic flux is transported outward at approximately the same rate at all heights, and the rate is comparable to the Hall-free case. For anti-aligned field polarity, the Hall effect consistently transports magnetic flux outward, leading to a largely vertical field configuration in the midplane region. The field lines in the upper layer first bend radially inward and then outward to launch a disk wind. Overall, the net rate of outward flux transport is about twice as fast as that of the aligned case. In addition, the rate of flux transport increases with increasing disk magnetization. The absolute rate of transport is sensitive to disk microphysics, which remains to be explored in future studies.« less

A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric

NASA Astrophysics Data System (ADS)

Soni, Deepak; Sharma, Dheeraj; Aslam, Mohd.; Yadav, Shivendra

2018-04-01

This article presents a new device configuration to enhance current drivability and suppress negative conduction (ambipolar conduction) with improved RF characteristics of physically doped TFET. Here, we used a new approach to get excellent electrical characteristics of hetero-dielectric short gate source electrode TFET (HD-SG SE-TFET) by depositing a metal electrode of 5.93 eV work function over the heavily doped source (P+) region. Deposition of metal electrode induces the plasma (thin layer) of holes under the Si/HfO2 interface due to work function difference of metal and semiconductor. Plasma layer of holes is advantageous to increase abruptness as well as decrease the tunneling barrier at source/channel junction for attaining higher tunneling rate of charge carriers (i.e., electrons), which turns into 86.66 times higher ON-state current compared with the conventional physically doped TFET (C-TFET). Along with metal electrode deposition, gate electrode is under-lapped for inducing asymmetrical concentration of charge carriers in the channel region, which is helpful for widening the tunneling barrier width at the drain/channel interface. Consequently, HD-SG SE-TFET shows suppression of ambipolar behavior with reduction in gate-to-drain capacitance which is beneficial for improvement in RF performance. Furthermore, the effectiveness of hetero-gate dielectric concept has been used for improving the RF performance. Furthermore, reliability of C-TFET and proposed structures has been confirmed in term of linearity.

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

NASA Astrophysics Data System (ADS)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

Long-Range Order in Nanocrystal Assemblies Determines Charge Transport of Films

DOE PAGES

Sainato, Michela; Shevitski, Brian; Sahu, Ayaskanta; ...

2017-07-18

Self-assembly of semiconductor nanocrystals (NCs) into two-dimensional patterns or three-dimensional (2- 3D) superstructures has emerged as a promising low-cost route to generate thin-film transistors and solar cells with superior charge transport because of enhanced electronic coupling between the NCs. Here, we show that lead sulfide (PbS) NCs solids featuring either short-range (disordered glassy solids, GSs) or long-range (superlattices, SLs) packing order are obtained solely by controlling deposition conditions of colloidal solution of NCs. In this study, we demonstrate the use of the evaporation-driven self-assembly method results in PbS NC SL structures that are observed over an area of 1 mmmore » × 100 μm, with long-range translational order of up to 100 nm. A number of ordered domains appear to have nucleated simultaneously and grown together over the whole area, imparting a polycrystalline texture to the 3D SL films. By contrast, a conventional, optimized spin-coating deposition method results in PbS NC glassy films with no translational symmetry and much shorter-range packing order in agreement with state-of-the-art reports. Further, we investigate the electronic properties of both SL and GS films, using a field-effect transistor configuration as a test platform. The long-range ordering of the PbS NCs into SLs leads to semiconducting NC-based solids, the mobility (μ) of which is 3 orders of magnitude higher than that of the disordered GSs. Furthemore, although spin-cast GSs of PbS NCs have weak ambipolar behavior with limited gate tunability, SLs of PbS NCs show a clear p-type behavior with significantly higher conductivities.« less

Comprehensive approach to intrinsic charge carrier mobility in conjugated organic molecules, macromolecules, and supramolecular architectures.

PubMed

Saeki, Akinori; Koizumi, Yoshiko; Aida, Takuzo; Seki, Shu

2012-08-21

Si-based inorganic electronics have long dominated the semiconductor industry. However, in recent years conjugated polymers have attracted increasing attention because such systems are flexible and offer the potential for low-cost, large-area production via roll-to-roll processing. The state-of-the-art organic conjugated molecular crystals can exhibit charge carrier mobilities (μ) that nearly match or even exceed that of amorphous silicon (1-10 cm(2) V(-1) s(-1)). The mean free path of the charge carriers estimated from these mobilities corresponds to the typical intersite (intermolecular) hopping distances in conjugated organic materials, which strongly suggests that the conduction model for the electronic band structure only applies to μ > 1 cm(2) V(-1) s(-1) for the translational motion of the charge carriers. However, to analyze the transport mechanism in organic electronics, researchers conventionally use a disorder formalism, where μ is usually less than 1 cm(2) V(-1) s(-1) and dominated by impurities, disorders, or defects that disturb the long-range translational motion. In this Account, we discuss the relationship between the alternating-current and direct-current mobilities of charge carriers, using time-resolved microwave conductivity (TRMC) and other techniques including field-effect transistor, time-of-flight, and space-charge limited current. TRMC measures the nanometer-scale mobility of charge carriers under an oscillating microwave electric field with no contact between the semiconductors and the metals. This separation allows us to evaluate the intrinsic charge carrier mobility with minimal trapping effects. We review a wide variety of organic electronics in terms of their charge carrier mobilities, and we describe recent studies of macromolecules, molecular crystals, and supramolecular architecture. For example, a rigid poly(phenylene-co-ethynylene) included in permethylated cyclodextrin shows a high intramolecular hole mobility of 0.5 cm(2) V(-1) s(-1), based on a combination of flash-photolysis TRMC and transient absorption spectroscopy (TAS) measurements. Single-crystal rubrene showed an ambipolarity with anisotropic charge carrier transport along each crystal axis on the nanometer scale. Finally, we describe the charge carrier mobility of a self-assembled nanotube consisting of a large π-plane of hexabenzocoronene (HBC) partially appended with an electron acceptor. The local (intratubular) charge carrier mobility reached 3 cm(2) V(-1) s(-1) for the nanotubes that possessed well-ordered π-stacking, but it dropped to 0.7 cm(2) V(-1) s(-1) in regions that contained greater amounts of the electron acceptor because those molecules reduced the structural integrity of π-stacked HBC arrays. Interestingly, the long-range (intertubular) charge carrier mobility was on the order of 10(-4) cm(2) V(-1) s(-1) and monotonically decreased when the acceptor content was increased. These results suggest the importance of investigating charge carrier mobilities by frequency-dependent charge carrier motion for the development of more efficient organic electronic devices.

Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement

NASA Astrophysics Data System (ADS)

Aghandeh, Hadi; Sedigh Ziabari, Seyed Ali

2017-11-01

This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers.

PubMed

Lee, Sangik; Yoon, Chansoo; Lee, Ji Hye; Kim, Yeon Soo; Lee, Mi Jung; Kim, Wondong; Baik, Jaeyoon; Jia, Quanxi; Park, Bae Ho

2018-06-06

Two-dimensional (2D)-layered semiconducting materials with considerable band gaps are emerging as a new class of materials applicable to next-generation devices. Particularly, black phosphorus (BP) is considered to be very promising for next-generation 2D electrical and optical devices because of its high carrier mobility of 200-1000 cm 2 V -1 s -1 and large on/off ratio of 10 4 to 10 5 in field-effect transistors (FETs). However, its environmental instability in air requires fabrication processes in a glovebox filled with nitrogen or argon gas followed by encapsulation, passivation, and chemical functionalization of BP. Here, we report a new method for reduction of BP-channel devices fabricated without the use of a glovebox by galvanic corrosion of an Al overlayer. The reduction of BP induced by an anodic oxidation of Al overlayer is demonstrated through surface characterization of BP using atomic force microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy along with electrical measurement of a BP-channel FET. After the deposition of an Al overlayer, the FET device shows a significantly enhanced performance, including restoration of ambipolar transport, high carrier mobility of 220 cm 2 V -1 s -1 , low subthreshold swing of 0.73 V/decade, and low interface trap density of 7.8 × 10 11 cm -2 eV -1 . These improvements are attributed to both the reduction of the BP channel and the formation of an Al 2 O 3 interfacial layer resulting in a high- k screening effect. Moreover, ambipolar behavior of our BP-channel FET device combined with charge-trap behavior can be utilized for implementing reconfigurable memory and neuromorphic computing applications. Our study offers a simple device fabrication process for BP-channel FETs with high performance using galvanic oxidation of Al overlayers.

Electron Transporting Semiconductor Dielectric Intramolecular

DTIC Science & Technology

2012-04-27

gate dielectric, and the capacitance times mobility was 80 nS/V (10x typical pentacene /oxide), stable to heating to 70 °C in air. Remarkably...oxide/ Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar and Nonvolatile Devices” Adv. Funct. Mater. 18, 1832-1839 (2008) Sun, J...case of layered OSC OFETs. This proposal is somewhat different from a model by deLeeuw for amorphous OFETs13 in which carriers would be locally

Inward transport of a toroidally confined plasma subject to strong radial electric fields

NASA Technical Reports Server (NTRS)

Roth, J. R.; Krawczonek, W. M.; Powers, E. J.; Hong, J.; Kim, Y.

1977-01-01

The paper aims at showing that the density and confinement time of a toroidal plasma can be enhanced by radial electric fields far stronger than the ambipolar values, and that, if such electric fields point into the plasma, radially inward transport can result. The investigation deals with low-frequency fluctuation-induced transport using digitally implemented spectral analysis techniques and with the role of strong applied radial electric fields and weak vertical magnetic fields on plasma density and particle confinement times in a Bumpy Torus geometry. Results indicate that application of sufficiently strong radially inward electric fields results in radially inward fluctuation-induced transport into the toroidal electrostatic potential well; this inward transport gives rise to higher average electron densities and longer particle confinement times in the toroidal plasma.

Ambipolar Barristors for Reconfigurable Logic Circuits.

PubMed

Liu, Yuan; Zhang, Guo; Zhou, Hailong; Li, Zheng; Cheng, Rui; Xu, Yang; Gambin, Vincent; Huang, Yu; Duan, Xiangfeng

2017-03-08

Vertical heterostructures based on graphene have emerged as a unique architecture for novel electronic devices with unusual characteristics. Here we report a new design of vertical ambipolar barristors based on metal-graphene-silicon-graphene sandwich structure, using the bottom graphene as a gate-tunable "active contact", the top graphene as an adaptable Ohmic contact, and the low doping thin silicon layer as the switchable channel. Importantly, with finite density of states and weak screening effect of graphene, we demonstrate, for the first time, that both the carrier concentration and majority carrier type in the sandwiched silicon can be readily modulated by gate potential penetrating through graphene. It can thus enable a new type of ambipolar barristors with an ON-OFF ratio exceeding 10 3 . Significantly, these ambipolar barristors can be flexibly configured into either p-type or n-type transistors and used to create integrated circuits with reconfigurable logic functions. This unconventional device structure and ambipolar reconfigurable characteristics can open up exciting opportunities in future electronics based on graphene or two-dimensional van der Waals heterostructures.

Carrier polarity engineering in carbon nanotube field-effect transistors by induced charges in polymer insulator

NASA Astrophysics Data System (ADS)

Aikawa, Shinya; Kim, Sungjin; Thurakitseree, Theerapol; Einarsson, Erik; Inoue, Taiki; Chiashi, Shohei; Tsukagoshi, Kazuhito; Maruyama, Shigeo

2018-01-01

We present that the electrical conduction type in carbon nanotube field-effect transistors (CNT-FETs) can be converted by induced charges in a polyvinyl alcohol (PVA) insulator. When the CNT channels are covered with pure PVA, the FET characteristics clearly change from unipolar p-type to ambipolar. The addition of ammonium ions (NH4+) in the PVA leads to further conversion to unipolar n-type conduction. The capacitance - voltage characteristics indicate that a high density of positive charges is induced at the PVA/SiO2 interface and within the bulk PVA. Electrons are electrostatically accumulated in the CNT channels due to the presence of the positive charges, and thus, stable n-type conduction of PVA-coated CNT-FETs is observed, even under ambient conditions. The mechanism for conversion of the conduction type is considered to be electrostatic doping due to the large amount of positive charges in the PVA. A blue-shift of the Raman G-band peak was observed for CNTs coated with NH4+-doped PVA, which corresponds to unipolar n-type CNT-FET behavior. These results confirm that carrier polarity engineering in CNT-FETs can be achieved with a charged PVA passivation layer.

Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors.

PubMed

Chen, Mikai; Wang, Yifan; Shepherd, Nathan; Huard, Chad; Zhou, Jiantao; Guo, L J; Lu, Wei; Liang, Xiaogan

2017-01-24

To construct reliable nanoelectronic devices based on emerging 2D layered semiconductors, we need to understand the charge-trapping processes in such devices. Additionally, the identified charge-trapping schemes in such layered materials could be further exploited to make multibit (or highly desirable analog-tunable) memory devices. Here, we present a study on the abnormal charge-trapping or memory characteristics of few-layer WSe 2 transistors. This work shows that multiple charge-trapping states with large extrema spacing, long retention time, and analog tunability can be excited in the transistors made from mechanically exfoliated few-layer WSe 2 flakes, whereas they cannot be generated in widely studied few-layer MoS 2 transistors. Such charge-trapping characteristics of WSe 2 transistors are attributed to the exfoliation-induced interlayer deformation on the cleaved surfaces of few-layer WSe 2 flakes, which can spontaneously form ambipolar charge-trapping sites. Our additional results from surface characterization, charge-retention characterization at different temperatures, and density functional theory computation strongly support this explanation. Furthermore, our research also demonstrates that the charge-trapping states excited in multiple transistors can be calibrated into consistent multibit data storage levels. This work advances the understanding of the charge memory mechanisms in layered semiconductors, and the observed charge-trapping states could be further studied for enabling ultralow-cost multibit analog memory devices.

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Pratap, Yogesh; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2017-12-01

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported, to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. This novel structure offers low barrier height at the source and offers high ON-state current. The I ON/I OFF of ISE-CGAA-SB-MOSFET increases by 1177 times and offers steeper subthreshold slope (~60 mV/decade). However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate, dual metal gate, single metal gate with ISE, and dual metal gate with ISE has been presented. The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design. The numerical simulation is performed using the ATLAS-3D device simulator.

Effects of convection electric field on upwelling and escape of ionospheric O(+)

NASA Technical Reports Server (NTRS)

Cladis, J. B.; Chiu, Yam T.; Peterson, William K.

1992-01-01

A Monte Carlo code is used to explore the full effects of the convection electric field on distributions of upflowing O(+) ions from the cusp/cleft ionosphere. Trajectories of individual ions/neutrals are computed as they undergo multiple charge-exchange collisions. In the ion state, the trajectories are computed in realistic models of the magnetic field and the convection, corotation, and ambipolar electric fields. The effects of ion-ion collisions are included, and the trajectories are computed with and without simultaneous stochastic heating perpendicular to the magnetic field by a realistic model of broadband, low frequency waves. In the neutral state, ballistic trajectories in the gravitational field are computed. The initial conditions of the ions, in addition to ambipolar electric field and the number densities and temperatures of O(+), H(+), and electrons as a function of height in the cusp/cleft region were obtained from the results of Gombosi and Killeen (1987), who used a hydrodynamic code to simulate the time-dependent frictional-heating effects in a magnetic tube during its motion though the convection throat. The distribution of the ion fluxes as a function of height are constructed from the case histories.

Isothermal transport properties and majority-type defects of BaCo(0.70)Fe(0.22)Nb(0.08)O(3-δ).

PubMed

Lee, Taewon; Cho, Deok-Yong; Kwon, Hyung-Soon; Yoo, Han-Ill

2015-01-28

(Ba,Sr)(Co,Fe)O3-δ based mixed conducting oxides, e.g. (Ba0.5Sr0.5)(Co1-xFex)O3-δ and Ba(Co0.7Fe0.3-xNbx)O3-δ, are promising candidates for oxygen permeable membranes and SOFC cathodes due to their excellent ambipolar conductivities. Despite these excellent properties, however, their mass/charge transport properties have not been fully characterized and hence, their defect structure has not been clearly elucidated. Until now, the majority types of ionic and electronic defects have been regarded as oxygen vacancies and localized holes. Holes, whether localized or not, are acceptable as majority electronic carriers on the basis of the as-measured total conductivity, which is essentially electronic, and electronic thermopower. On the other hand, the proposal of oxygen vacancies as majority ionic carriers lacks solid evidence. In this work, we document all the isothermal transport properties of Ba(Co0.70Fe0.22Nb0.08)O3-δ in terms of a 2 × 2 Onsager transport coefficient matrix and its steady-state electronic thermopower against oxygen activity at elevated temperatures, and determine the valences of Co and Fe via soft X-ray absorption spectroscopy. It turns out that the ionic and electronic defects in majority should be oxygen interstitials and at least two kinds of holes, one free and the other trapped. Furthermore, the lattice molecule should be Ba(Co0.7Fe0.3-xNbx)O2+δ, not Ba(Co0.7Fe0.3-xNbx)O3-δ, to be consistent with all the results observed.

Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Bongjun; Liang, Kelly; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu

We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors suchmore » as enhanced on-current are also observed.« less

Electrical characteristics of Graphene based Field Effect Transistor (GFET) biosensor for ADH detection

NASA Astrophysics Data System (ADS)

Selvarajan, Reena Sri; Hamzah, Azrul Azlan; Majlis, Burhanuddin Yeop

2017-08-01

First pristine graphene was successfully produced by mechanical exfoliation and electrically characterized in 2004 by Andre Geim and Konstantin Novoselov at University of Manchester. Since its discovery in 2004, graphene also known as `super' material that has enticed many researchers and engineers to explore its potential in ultrasensitive detection of analytes in biosensing applications. Among myriad reported sensors, biosensors based on field effect transistors (FETs) have attracted much attention. Thus, implementing graphene as conducting channel material hastens the opportunities for production of ultrasensitive biosensors for future device applications. Herein, we have reported electrical characteristics of graphene based field effect transistor (GFET) for ADH detection. GFET was modelled and simulated using Lumerical DEVICE charge transport solver (DEVICE CT). Electrical characteristics comprising of transfer and output characteristics curves are reported in this study. The device shows ambipolar curve and achieved a minimum conductivity of 0.23912 e5A at Dirac point. However, the curve shifts to the left and introduces significant changes in the minimum conductivity as drain voltage is increased. Output characteristics of GFET exhibits linear Id - Vd dependence characteristics for gate voltage ranging from 0 to 1.5 V. In addition, behavior of electrical transport through GFET was analyzed for various simulation temperatures. It clearly proves that the electrical transport in GFET is dependent on the simulation temperature as it may vary the maximum resistance in channel of the device. Therefore, this unique electrical characteristics of GFET makes it as a promising candidate for ultrasensitive detection of small biomolecules such as ADH in biosensing applications.

Wind-driving protostellar accretion discs - I. Formulation and parameter constraints

NASA Astrophysics Data System (ADS)

Königl, Arieh; Salmeron, Raquel; Wardle, Mark

2010-01-01

We study a model of weakly ionized, protostellar accretion discs that are threaded by a large-scale, ordered magnetic field and power a centrifugally driven wind. We consider the limiting case where the wind is the main repository of the excess disc angular momentum and generalize the radially localized disc model of Wardle & Königl, which focused on the ambipolar diffusion regime, to other field diffusivity regimes, notably Hall and Ohm. We present a general formulation of the problem for nearly Keplerian, vertically isothermal discs using both the conductivity-tensor and the multifluid approaches and simplify it to a normalized system of ordinary differential equations in the vertical space coordinate. We determine the relevant parameters of the problem and investigate, using the vertical-hydrostatic-equilibrium approximation and other simplifications, the parameter constraints on physically viable solutions for discs in which the neutral particles are dynamically well coupled to the field already at the mid-plane. When the charged particles constitute a two-component ion-electron plasma, one can identify four distinct sub-regimes in the parameter domain where the Hall diffusivity dominates and three sub-regimes in the Ohm-dominated domain. Two of the Hall sub-regimes can be characterized as being ambipolar diffusion-like and two as being Ohm-like: the properties of one member of the first pair of sub-regimes are identical to those of the ambipolar diffusion regime, whereas one member of the second pair has the same characteristics as one of the Ohm sub-regimes. All the Hall sub-regimes have Brb/|Bφb| (ratio of radial-to-azimuthal magnetic field amplitudes at the disc surface) >1, whereas in two Ohm sub-regimes this ratio is <1. When the two-component plasma consists, instead, of positively and negatively charged grains of equal mass, the entire Hall domain and one of the Ohm sub-regimes with Brb/|Bφb| < 1 disappear. All viable solutions require the mid-plane neutral-ion momentum exchange time to be shorter than the local orbital time. We also infer that vertical magnetic squeezing always dominates over gravitational tidal compression in this model. In a follow-up paper we will present exact solutions that test the results of this analysis in the Hall regime.

Neoclassical transport in toroidal plasmas with nonaxisymmetric flux surfaces

DOE PAGES

Belli, Emily A.; Candy, Jefferey M.

2015-04-15

The capability to treat nonaxisymmetric flux surface geometry has been added to the drift-kinetic code NEO. Geometric quantities (i.e. metric elements) are supplied by a recently-developed local 3D equilibrium solver, allowing neoclassical transport coefficients to be systematically computed while varying the 3D plasma shape in a simple and intuitive manner. Code verification is accomplished via detailed comparison with 3D Pfirsch–Schlüter theory. A discussion of the various collisionality regimes associated with 3D transport is given, with an emphasis on non-ambipolar particle flux, neoclassical toroidal viscosity, energy flux and bootstrap current. As a result, we compute the transport in the presence ofmore » ripple-type perturbations in a DIII-D-like H-mode edge plasma.« less

Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.

PubMed

Zhu, Weinan; Yogeesh, Maruthi N; Yang, Shixuan; Aldave, Sandra H; Kim, Joon-Seok; Sonde, Sushant; Tao, Li; Lu, Nanshu; Akinwande, Deji

2015-03-11

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers.

PubMed

Wang, Wei; Hwang, Sun Kak; Kim, Kang Lib; Lee, Ju Han; Cho, Suk Man; Park, Cheolmin

2015-05-27

The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.

Anticipated Electrical Environment at Phobos: Nominal and Solar Storm Conditions

NASA Technical Reports Server (NTRS)

Farrell, W. M.; Halekas, J. S.; Fatemi, S.; Poppe, A. R.; Hartzell, C.; Marshall, J. R.; Stubbs, T. J.; Zimmerman, M. I.; Zheng, Y.

2017-01-01

A passing coronal mass ejection (CME) will manifest a different response at an airless body compared to a magnetized planet. Specifically,because the regolith-rich surfaces of airless bodies are directly exposed to the variations in the plasma flow, the surfaces are found to undergo anomalous surface charging during the passing of CME fast plasma events. In this study, we model the surface charging expected at Phobos for nominal solar wind conditions and also those associated with disturbed solar wind conditions during the passage of a CME similar to that observed by MAVEN at Mars in early March 2015. We use an ambipolar diffusion model to examine the development of the trailing wake void in the plasma flow behind Phobos and the formation of mini-wakes within obstruction regions like Stickney Crater. We also consider the roving of an astronaut in Stickney Crater for Phobos positioned near 10 hours Local Time relative to Mars. We examine the plasma dissipation of the collected astronaut charge from contact electrification with the regolith.

Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

NASA Astrophysics Data System (ADS)

Garg, Shelly; Saurabh, Sneh

2018-01-01

In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using calibrated two-dimensional device simulation, we examine the impact of DP in Double Gate TFET (DGTFET). We demonstrate the superiority of the DP technique over the existing techniques in controlling the ambipolar current. In particular, the addition of DP to a TFET is able to fully suppress the ambipolar current even when TFET is biased at high negative gate voltages and drain doping is kept as high as the source doping. Moreover, adding DP is complementary to the well-known technique of employ-ing source-pocket (SP) in a TFET since both need similar doping type and doping concentration.

Nonlinear current-voltage characteristics and enhanced negative differential conductance in graphene field effect transistors.

PubMed

Wang, Lin; Chen, Xiaoshuang; Hu, Yibin; Yu, Anqi; Lu, Wei

2014-11-07

Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

An easily accessible carbon material derived from carbonization of polyacrylonitrile ultrathin films: ambipolar transport properties and application in a CMOS-like inverter.

PubMed

Jiao, Fei; Zhang, Fengjiao; Zang, Yaping; Zou, Ye; Di, Chong'an; Xu, Wei; Zhu, Daoben

2014-03-04

Ultrathin carbon films were prepared by carbonization of a solution processed polyacrylonitrile (PAN) film in a moderate temperature range (500-700 °C). The films displayed balanced hole (0.50 cm(2) V(-1) s(-1)) and electron mobilities (0.20 cm(2) V(-1) s(-1)) under ambient conditions. Spectral characterization revealed that the electrical transport is due to the formation of sp(2) hybridized carbon during the carbonization process. A CMOS-like inverter demonstrated the potential application of this material in the area of carbon electronics, considering its processability and low-cost.

Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor.

PubMed

Lan, Yann-Wen; Torres, Carlos M; Tsai, Shin-Hung; Zhu, Xiaodan; Shi, Yumeng; Li, Ming-Yang; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

2016-11-01

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS 2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS 2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ambipolar transport based on CVD-synthesized ReSe2

NASA Astrophysics Data System (ADS)

Kang, Byunggil; Kim, Youngchan; Cho, Jeong Ho; Lee, Changgu

2017-06-01

Control of the carrier type in two dimensional (2D) materials is a serious issue for the realization of logic devices. The carrier type control of 2D semiconducting materials such as MoTe2, WSe2 and black phosphorus have been studied for this purpose. However, the systematic study on the polarity control of transistors based on ReSe2, a new member of 2D materials, has remained unexplored despite the intriguing anisotropic optical and electrical properties deriving from the exotic crystal structure. Here, we report the electrical characterization of field effect transistors (FETs) of single crystalline ReSe2 grown by a chemical vapor deposition. In contrast to a previous report of unipolar p-type exfoliated crystals, synthesized ReSe2 FETs on SiO2 with Au contact exhibit highly symmetric ambipolar behaviors with the current on/off ratios of ~104 for both of hole and electron injection. The carrier type could be controlled via the metal contact. With Al contacts, ReSe2 FETs display perfect transition to pure n-type unipolar behavior. It is found that carrier type of ReSe2 via thickness variation was hardly modulated because the ReSe2 bandgap has little dependence on its thickness. We successfully achieved the fabrication of a logic inverter by using only ambipolar ReSe2 FETs on SiO2/Si without electrostatic doping or chemical treatments. These results demonstrate that ReSe2 is a promising candidate for future low power logic devices and functional nano electronic applications.

SYMTRAN - A Time-dependent Symmetric Tandem Mirror Transport Code

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hua, D; Fowler, T

2004-06-15

A time-dependent version of the steady-state radial transport model in symmetric tandem mirrors in Ref. [1] has been coded up and first tests performed. Our code, named SYMTRAN, is an adaptation of the earlier SPHERE code for spheromaks, now modified for tandem mirror physics. Motivated by Post's new concept of kinetic stabilization of symmetric mirrors, it is an extension of the earlier TAMRAC rate-equation code omitting radial transport [2], which successfully accounted for experimental results in TMX. The SYMTRAN code differs from the earlier tandem mirror radial transport code TMT in that our code is focused on axisymmetric tandem mirrorsmore » and classical diffusion, whereas TMT emphasized non-ambipolar transport in TMX and MFTF-B due to yin-yang plugs and non-symmetric transitions between the plugs and axisymmetric center cell. Both codes exhibit interesting but different non-linear behavior.« less

An organic water-gated ambipolar transistor with a bulk heterojunction active layer for stable and tunable photodetection

NASA Astrophysics Data System (ADS)

Xu, Haihua; Zhu, Qingqing; Wu, Tongyuan; Chen, Wenwen; Zhou, Guodong; Li, Jun; Zhang, Huisheng; Zhao, Ni

2016-11-01

Organic water-gated transistors (OWGTs) have emerged as promising sensing architectures for biomedical applications and environmental monitoring due to their ability of in-situ detection of biological substances with high sensitivity and low operation voltage, as well as compatibility with various read-out circuits. Tremendous progress has been made in the development of p-type OWGTs. However, achieving stable n-type operation in OWGTs due to the presence of solvated oxygen in water is still challenging. Here, we report an ambipolar OWGT based on a bulk heterojunction active layer, which exhibits a stable hole and electron transport when exposed to aqueous environment. The device can be used as a photodetector both in the hole and electron accumulation regions to yield a maximum responsivity of 0.87 A W-1. More importantly, the device exhibited stable static and dynamic photodetection even when operated in the n-type mode. These findings bring possibilities for the device to be adopted for future biosensing platforms, which are fully compatible with low-cost and low-power organic complementary circuits.

Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

NASA Astrophysics Data System (ADS)

Isik, Dilek

This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from electrochemical impedance spectroscopy. In the context of ARTICLE 1, thin film transistors based on soluble pentacene derivatives (prepared by the research group directed by Professor J. Anthony, at the University of Kentucky) were fabricated and characterized. GIXRD results performed on the thin films suggested a molecular arrangement favorable to charge transport in the source-drain direction, with the pi-pi stacking direction perpendicular to the channel. In ARTICLE 1, HMDS-treated SiO 2 substrates were used, to improve the surface coverage and to limit charge trapping at the dielectric surface. AFM showed good film coverage. The transistors showed ambipolar characteristics, attributed to the good matching between Au electrode work function and highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the pentacene derivative. The work reported in ARTICLE 2 deals with pi-conjugated thiopheno-azomethines (both in oligomer and polymer form) and oligothiophene analogues. In the former case, couplings in the polymer are based on azomethine (-N=C-) moieties whereas in the latter case they are based on more conventional protocols (-C=C-). The effect of the coupling protocols on the corresponding thin film transistors behavior was studied. The key conclusion of this study was that thiopheno-azomethines thin films can be effectively incorporated into organic transistors: thin films of oligothiopheno-azomethines and the oligothiophenes exhibit p-type behavior whereas thin films of polythiopheno-azomethine exhibit an ambipolar behavior. The hole mobility of the heat-treated thin films of oligothiopheno-azomethines was three orders of magnitude higher compared to its oligothiophene analogue. AFM, coupled with hyperspectral fluorescence imaging, were used to investigate the micro- and nano-scale surface coverage. For the oligothiopheno-azomethine we were able to quantitatively deduce the surface coverage. To contribute to the exploration of innovative strategies for low power consuming solution based electronics and capitalizing on the expertise of the group in the synthesis of solution deposited WO3 films the electrolyte gating approach was explored in ARTICLE 3. Ionic liquids, that are molten salts at room temperature, were employed as the electrolyte. Ionic liquids are attractive for their low volatility, non-flammability, ionic conductivity and thermal and electrochemical stability. Thin films of WO3 were deposited onto pre-patterned ITO substrates (source-drain interelectrode distance, 1 mm) prepared by wet chemical etching. SEM and AFM showed an interconnected film nanostructure. Electrolyte gated WO3 thin film transistors making use of 1-butyl-3-methyl imidazolium bis(trifluoromethylsulfonyl)imide ([BMIM][TFSI]), 1-butyl-3-methyl imidazolium hexafluoro phosphate ([BMIM][PF6]), and 1-ethyl-3-methyl imidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) showed an n-type transistor behavior. The possibility to obtain WO3 electrolyte gated transistors represents an opportunity to fabricate electronic devices working at relatively low operating voltages (about 1 V) by using simple fabrication techniques.

Large-area graphene films by simple solution casting of edge-selectively functionalized graphite.

PubMed

Bae, Seo-Yoon; Jeon, In-Yup; Yang, Jieun; Park, Noejung; Shin, Hyeon Suk; Park, Sungjin; Ruoff, Rodney S; Dai, Liming; Baek, Jong-Beom

2011-06-28

We report edge-selective functionalization of graphite (EFG) for the production of large-area uniform graphene films by simply solution-casting EFG dispersions in dichloromethane on silicon oxide substrates, followed by annealing. The resultant graphene films show ambipolar transport properties with sheet resistances of 0.52-3.11 kΩ/sq at 63-90% optical transmittance. EFG allows solution processing methods for the scalable production of electrically conductive, optically transparent, and mechanically robust flexible graphene films for use in practice.

Ambipolar SnOx thin-film transistors achieved at high sputtering power

NASA Astrophysics Data System (ADS)

Li, Yunpeng; Yang, Jia; Qu, Yunxiu; Zhang, Jiawei; Zhou, Li; Yang, Zaixing; Lin, Zhaojun; Wang, Qingpu; Song, Aimin; Xin, Qian

2018-04-01

SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 °C in ambient air. X-ray-diffraction patterns showed polycrystallisation of SnO and Sn in the annealed SnOx films. Scanning-electron-microscopy images revealed that microgrooves appeared after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggest that they were most likely Sn clusters. Atomic force microscopy images indicate an abrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has generally been thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film to enhance the stoichiometric balance.

Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity.

PubMed

Lee, A-Young; Ra, Hyun-Soo; Kwak, Do-Hyun; Jeong, Min-Hye; Park, Jeong-Hyun; Kang, Yeon-Su; Chae, Weon-Sik; Lee, Jong-Soo

2018-05-09

Recently, black phosphorus (BP) with direct band gap exhibited excellent potential for optoelectronic applications because of its high charge carrier mobility and low dark current as well as the variable band gap of 0.3-1.5 eV depending on the number of layers. However, few-layer BP-based phototransistors (photo-FETs) have been limited in sensitivity and wavelength selectivity. To overcome the drawback of these photo-FETs, we studied hybrid photo-FETs combined with the novel properties of the two materials between the channel and sensitizer layers. By combining a strong absorbance of a quantum dot (QD) layer and a two-dimensional layer material with high carrier mobility, the hybrid photo-FETs are expected to produce high-performance photodetectors that can effectively control the responsivity, detectivity, and response time. In this study, we demonstrate that the photogenerated carriers formed from QD sensitizer layers migrate to the BP transport layer with high charge mobility and not only improve the photodetector performance but also enhance the photodoping effect of the BP transport layer with an ambipolar characteristic by electrons transferred from n-type CdSe QDs or holes injected from p-type PbS QDs. The responsivity and detectivity of hybrid BP/0D photo-FETs exhibit 1.16 × 10 9 A W -1 and 7.53 × 10 16 Jones for the BP/CdSe QD photo-FET and 5.36 × 10 8 A W -1 and 1.89 × 10 16 Jones for the BP/PbS QD photo-FET, respectively. The photocurrent rise (τ rise ) and decay (τ decay ) times were τ rise = 0.406 s and τ decay = 0.815 s for BP/CdSe QD photo-FET and τ rise = 0.576 s and τ decay = 0.773 s for BP/PbS QD photo-FET, respectively.

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

NASA Astrophysics Data System (ADS)

Lee, Sejoon; Song, Emil B.; Kim, Sungmin; Seo, David H.; Seo, Sunae; Won Kang, Tae; Wang, Kang L.

2012-01-01

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (ΦTi = 4.3 eV) and Ni (ΦNi = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔVM), which is ˜4.5 V for the Ti-gate device and ˜9.1 V for the Ni-gate device. The increase in ΔVM is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.

Fast-to-Alfvén Mode Conversion in the Presence of Ambipolar Diffusion

NASA Astrophysics Data System (ADS)

Cally, Paul S.; Khomenko, Elena

2018-03-01

It is known that fast magnetohydrodynamic waves partially convert to upward and/or downward propagating Alfvén waves in a stratified atmosphere where Alfvén speed increases with height. This happens around the fast wave reflection height, where the fast wave’s horizontal phase speed equals the Alfvén speed (in a low-β plasma). Typically, this takes place in the mid to upper solar chromosphere for low-frequency waves in the few-millihertz band. However, this region is weakly ionized and thus susceptible to nonideal MHD processes. In this article, we explore how ambipolar diffusion in a zero-β plasma affects fast waves injected from below. Classical ambipolar diffusion is far too weak to have any significant influence at these low frequencies, but if enhanced by turbulence (in the quiet-Sun chromosphere but not in sunspot umbrae) or the production of sufficiently small-scale structure, can substantially absorb waves for turbulent ambipolar Reynolds numbers of around 20 or less. In that case, it is found that the mode conversion process is not qualitatively altered from the ideal case, though conversion to Alfvén waves is reduced because the fast wave flux reaching the conversion region is degraded. It is also found that any upward propagating Alfvén waves generated in this process are almost immune to further ambipolar attenuation, thereby reducing local ambipolar heating compared to cases without mode conversion. In that sense, mode conversion provides a form of “Alfvén cooling.”

MAGNETIZED ACCRETION AND DEAD ZONES IN PROTOSTELLAR DISKS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dzyurkevich, Natalia; Henning, Thomas; Turner, Neal J.

The edges of magnetically dead zones in protostellar disks have been proposed as locations where density bumps may arise, trapping planetesimals and helping form planets. Magneto-rotational turbulence in magnetically active zones provides both accretion of gas on the star and transport of mass to the dead zone. We investigate the location of the magnetically active regions in a protostellar disk around a solar-type star, varying the disk temperature, surface density profile, and dust-to-gas ratio. We also consider stellar masses between 0.4 and 2 M{sub Sun }, with corresponding adjustments in the disk mass and temperature. The dead zone's size andmore » shape are found using the Elsasser number criterion with conductivities including the contributions from ions, electrons, and charged fractal dust aggregates. The charged species' abundances are found using the approach proposed by Okuzumi. The dead zone is in most cases defined by the ambipolar diffusion. In our maps, the dead zone takes a variety of shapes, including a fish tail pointing away from the star and islands located on and off the midplane. The corresponding accretion rates vary with radius, indicating locations where the surface density will increase over time, and others where it will decrease. We show that density bumps do not readily grow near the dead zone's outer edge, independently of the disk parameters and the dust properties. Instead, the accretion rate peaks at the radius where the gas-phase metals freeze out. This could lead to clearing a valley in the surface density, and to a trap for pebbles located just outside the metal freezeout line.« less

Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

PubMed

Baeg, Kang-Jun; Caironi, Mario; Noh, Yong-Young

2013-08-21

For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band-gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary "CMOS-like" logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits. Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large-volume micro- and nano-electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down-scaling of devices in order to achieve the operation frequencies needed for applications, such as flexible radio-frequency identification (RFID) tags, near-field communication (NFC) devices, ambient electronics, and portable flexible displays. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced Mixed Electronic-Ionic Conductors through Cation Ordering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jacobson, Allan J.; Morgan, Dane; Grey, Clare

2014-08-31

The performance of many energy conversion and storage devices depend on the properties of mixed ionic-electronic conducting (miec) materials. Mixed or ambipolar conductors simultaneously transport ions and electrons and provide the critical interface between chemical and electrical energy in devices such as fuel cells, ion transport membranes, and batteries. Enhancements in storage capacity, reversibility, power density and device lifetime all require new materials and a better understanding of the fundamentals of ambipolar conductivity and surface reactivity.The high temperature properties of the ordered perovksites AA’B 2O 5+x, where A = rare earth ion, Y and B = Ba, Sr were studied.more » The work was motivated by the high oxygen transport and surface exchange rates observed for members of this class of mixed ionic and electronic conductors. A combined experimental and computational approach, including structural, electrochemical, and transport characterization and modeling was used. The approach attacks the problem simultaneously at global (e.g., neutron diffraction and impedance spectroscopy), local (e.g., pair distribution function, nuclear magnetic resonance) and molecular (ab initio thermokinetic modeling) length scales. The objectives of the work were to understand how the cation and associated anion order lead to exceptional ionic and electronic transport properties and surface reactivity in AA’B2O5+x perovskites. A variety of compounds were studied by X-ray and neutron diffraction, measurements of thermodynamics and transport and theoretically. These included PrBaCo 2O 5+x and NdBaCo 2O 5+x, PrBaCo 2-xFexO 6- δ (x = 0, 0.5, 1.0, 1.5 and 2) and LnBaCoFeO 6- δ (Ln = La, Pr, Nd, Sm, Eu and Gd), Sr 3YCo 4O 10.5, YBaMn 2O 5+x. A 0.5A’ 0.5BO 3 (where A=Y, Sc, La, Ce, Pr, Nd, Pm, Sm; A’= Sr, Ba; and B= Fe, Co, Mn, Ni), Ba 2In 2O 5, and La 1 xSr xCoO 3-δ /(La 1-ySry) 2CoO 4±δ interfaces.« less

A cyano-terminated dithienyldiketopyrrolopyrrole dimer as a solution processable ambipolar semiconductor under ambient conditions.

PubMed

Wang, Li; Zhang, Xiaojie; Tian, Hongkun; Lu, Yunfeng; Geng, Yanhou; Wang, Fosong

2013-12-14

A cyano-terminated dimer of dithienyldiketopyrrolopyrrole (TDPP), DPP2-CN, is a solution processable ambipolar semiconductor with field-effect hole and electron mobilities of 0.066 and 0.033 cm(2) V(-1) s(-1), respectively, under ambient conditions.

Solution-processable ambipolar diketopyrrolopyrrole-selenophene polymer with unprecedentedly high hole and electron mobilities.

PubMed

Lee, Junghoon; Han, A-Reum; Kim, Jonggi; Kim, Yiho; Oh, Joon Hak; Yang, Changduk

2012-12-26

There is a fast-growing demand for polymer-based ambipolar thin-film transistors (TFTs), in which both n-type and p-type transistor operations are realized in a single layer, while maintaining simplicity in processing. Research progress toward this end is essentially fueled by molecular engineering of the conjugated backbones of the polymers and the development of process architectures for device fabrication, which has recently led to hole and electron mobilities of more than 1.0 cm(2) V(-1) s(-1). However, ambipolar polymers with even higher performance are still required. By taking into account both the conjugated backbone and side chains of the polymer component, we have developed a dithienyl-diketopyrrolopyrrole (TDPP) and selenophene containing polymer with hybrid siloxane-solubilizing groups (PTDPPSe-Si). A synergistic combination of rational polymer backbone design, side-chain dynamics, and solution processing affords an enormous boost in ambipolar TFT performance, resulting in unprecedentedly high hole and electron mobilities of 3.97 and 2.20 cm(2) V(-1) s(-1), respectively.

Controlling the ambipolarity and improvement of RF performance using Gaussian Drain Doped TFET

NASA Astrophysics Data System (ADS)

Nigam, Kaushal; Gupta, Sarthak; Pandey, Sunil; Kondekar, P. N.; Sharma, Dheeraj

2018-05-01

Ambipolar conduction in tunnel field-effect transistors (TFETs) has been occurred as an inherent issue due to drain-channel tunneling. It makes TFET less efficient and restricts its application in complementary digital circuits. Therefore, this manuscript reports the application of Gaussian doping profile on nanometer regime silicon channel TFETs to completely eliminate the ambipolarity. For this, Gaussian doping is used in the drain region of conventional gate-drain overlap TFET to control the tunneling of electrons from the valence band of channel to the conduction band of drain. As a result, barrier width at the drain/channel junction increases significantly leading to the suppression of an ambipolar current even when higher doping concentration (1 ? 10 ? cm ?) is considered in the drain region. However, significant improvement in terms of RF figure-of-merits such as cut-off frequency (f ?), gain bandwidth product (GBW), and gate-to-drain capacitance (C ?) is achieved with Gaussian doped gate on drain overlap TFET as compared to its counterpart TFET.

Influence of gate overlap engineering on ambipolar and high frequency characteristics of tunnel-CNTFET

NASA Astrophysics Data System (ADS)

Shaker, Ahmed; Ossaimee, Mahmoud; Zekry, A.; Abouelatta, Mohamed

2015-10-01

In this paper, we have investigated the effect of gate overlapping-on-drain on the ambipolar behavior and high frequency performance of tunnel CNTFET (T-CNTFET). It is found that gate overlapping-on-drain suppresses the ambipolar behavior and improves OFF-state current. The simulation results show that there is an optimum choice for the overlapped length. On the other hand, this overlap deteriorates the high frequency performance. The high frequency figure of merit is analyzed in terms of the unit-gain cutoff frequency (fT). Further, we propose two different approaches to improve the high frequency performance of the overlapped T-CNTFET. The first one is based on inserting a high-dielectric constant material below the overlapped part of the gate and the second is based on depositing a different work function gate metal for the overlapped region. The two solutions show very good improvement in the high frequency performance with maintaining the suppression of the ambipolar characteristics.

Tunable electrical conductivity of individual graphene oxide sheets reduced at "low" temperatures.

PubMed

Jung, Inhwa; Dikin, Dmitriy A; Piner, Richard D; Ruoff, Rodney S

2008-12-01

Step-by-step controllable thermal reduction of individual graphene oxide sheets, incorporated into multiterminal field effect devices, was carried out at low temperatures (125-240 degrees C) with simultaneous electrical measurements. Symmetric hysteresis-free ambipolar (electron- and hole-type) gate dependences were observed as soon as the first measurable resistance was reached. The conductivity of each of the fabricated devices depended on the level of reduction (was increased more than 10(6) times as reduction progressed), strength of the external electrical field, density of the transport current, and temperature.

Self Consistent Ambipolar Transport and High Frequency Oscillatory Transient in Graphene Electronics

DTIC Science & Technology

2015-08-17

study showed that in the presence of an ac field, THz oscillations exhibit soft resonances at a frequency roughly equal to half of the inverse of the ...exhibit soft resonances at a frequency roughly equal to half of the inverse of the carrier transit time to the LO phonon energy. It also showed that in...carriers in graphene undergo an anomalous parametric resonance. Such resonance occurs at about half the frequency ωF = 2πeF/~ωOP , where 2π/ωF is the time

Ambilpolar Electric Field and Diffusive Cooling of Electrons in Meteor Trails

NASA Astrophysics Data System (ADS)

Pasko, V. P.; Kelley, M. C.

2017-12-01

Kelley and Price [GRL, 44, 2987, 2017] recently indicated that ambipolar electric fields may play a role in dynamics of dense plasmas generated by meteors. In the present work we discuss time dynamics of relaxation of electron temperature in meteor trails under relatively common conditions when meteor trail diffusion is not affected by the geomagnetic field (i.e., at low altitudes where both electrons and ions are not magnetized, or at higher altitudes in the plane defined by the trail and magnetic field when meteor trail is not aligned with the geomagnetic field [Ceplecha et al., Space Sci. Rev., 84, 327, 1998, and references therein]). The rate of ambipolar diffusion is a function of temperature and pressure [e.g., Hocking et al., Ann. Geophys., 34, 1119, 2016; Silber et al., Mon. Not. RAS, 469, 1869, 2017] and there is a significant spectroscopic evidence of initial plasma temperatures in meteor trails on the order 4400 deg K [Jennikens et al., Astrobiology, 4, 81, 2004]. For a representative altitude of 105 km chosen for our studies the results are consistent with previous analysis conducted in [Baggeley and Webb, J. Atm. Terr. Phys., 39, 1399, 1977; Ceplecha et al., 1998] indicating that the electron temperature remains elevated for significant time durations measured in tens of milliseconds. Our results indicate that in terms of their magnitudes the ambipolar electric fields can exceed the critical breakdown field of air, consistent with ideas expressed by Kelley and Price [GRL, 44, 2987, 2017], however, under considered conditions these fields lead to acceleration of electron cooling, with electron temperatures falling below the ambient air temperature (below 224 deg K at 105 km altitude). These effects are referred to as diffusive cooling [e.g., Rozhansky and Tsendin, Transport phenomena in partially ionized plasma, Taylor & Francis, 2001, p. 449] and represent a process in which diffusing electrons move against the force acting on them from ambipolar electric field and lose thermal energy. Under considered conditions electron heating in super elastic collisions with rotationally excited ambient molecules becomes important and we will illustrate related time scales by Monte Carlo simulations based on modeling framework of [Frost and Phelps, Phys. Rev., 127, 1621, 1962; Hake and Phelps, Phys. Rev., 158, 70, 1967].

Hydrodynamic theory of diffusion in two-temperature multicomponent plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramshaw, J.D.; Chang, C.H.

Detailed numerical simulations of multicomponent plasmas require tractable expressions for species diffusion fluxes, which must be consistent with the given plasma current density J{sub q} to preserve local charge neutrality. The common situation in which J{sub q} = 0 is referred to as ambipolar diffusion. The use of formal kinetic theory in this context leads to results of formidable complexity. We derive simple tractable approximations for the diffusion fluxes in two-temperature multicomponent plasmas by means of a generalization of the hydrodynamical approach used by Maxwell, Stefan, Furry, and Williams. The resulting diffusion fluxes obey generalized Stefan-Maxwell equations that contain drivingmore » forces corresponding to ordinary, forced, pressure, and thermal diffusion. The ordinary diffusion fluxes are driven by gradients in pressure fractions rather than mole fractions. Simplifications due to the small electron mass are systematically exploited and lead to a general expression for the ambipolar electric field in the limit of infinite electrical conductivity. We present a self-consistent effective binary diffusion approximation for the diffusion fluxes. This approximation is well suited to numerical implementation and is currently in use in our LAVA computer code for simulating multicomponent thermal plasmas. Applications to date include a successful simulation of demixing effects in an argon-helium plasma jet, for which selected computational results are presented. Generalizations of the diffusion theory to finite electrical conductivity and nonzero magnetic field are currently in progress.« less

MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

PubMed

He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

2017-01-01

2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Graphene Ambipolar Nanoelectronics for High Noise Rejection Amplification.

PubMed

Liu, Che-Hung; Chen, Qi; Liu, Chang-Hua; Zhong, Zhaohui

2016-02-10

In a modern wireless communication system, signal amplification is critical for overcoming losses during multiple data transformations/processes and long-distance transmission. Common mode and differential mode are two fundamental amplification mechanisms, and they utilize totally different circuit configurations. In this paper, we report a new type of dual-gate graphene ambipolar device with capability of operating under both common and differential modes to realize signal amplification. The signal goes through two stages of modulation where the phase of signal can be individually modulated to be either in-phase or out-of-phase at two stages by exploiting the ambipolarity of graphene. As a result, both common and differential mode amplifications can be achieved within one single device, which is not possible in the conventional circuit configuration. In addition, a common-mode rejection ratio as high as 80 dB can be achieved, making it possible for low noise circuit application. These results open up new directions of graphene-based ambipolar electronics that greatly simplify the RF circuit complexity and the design of multifunction device operation.

Two-dimensional Radiative Magnetohydrodynamic Simulations of Partial Ionization in the Chromosphere. II. Dynamics and Energetics of the Low Solar Atmosphere

NASA Astrophysics Data System (ADS)

Martínez-Sykora, Juan; De Pontieu, Bart; Carlsson, Mats; Hansteen, Viggo H.; Nóbrega-Siverio, Daniel; Gudiksen, Boris V.

2017-09-01

We investigate the effects of interactions between ions and neutrals on the chromosphere and overlying corona using 2.5D radiative MHD simulations with the Bifrost code. We have extended the code capabilities implementing ion-neutral interaction effects using the generalized Ohm’s law, I.e., we include the Hall term and the ambipolar diffusion (Pedersen dissipation) in the induction equation. Our models span from the upper convection zone to the corona, with the photosphere, chromosphere, and transition region partially ionized. Our simulations reveal that the interactions between ionized particles and neutral particles have important consequences for the magnetothermodynamics of these modeled layers: (1) ambipolar diffusion increases the temperature in the chromosphere; (2) sporadically the horizontal magnetic field in the photosphere is diffused into the chromosphere, due to the large ambipolar diffusion; (3) ambipolar diffusion concentrates electrical currents, leading to more violent jets and reconnection processes, resulting in (3a) the formation of longer and faster spicules, (3b) heating of plasma during the spicule evolution, and (3c) decoupling of the plasma and magnetic field in spicules. Our results indicate that ambipolar diffusion is a critical ingredient for understanding the magnetothermodynamic properties in the chromosphere and transition region. The numerical simulations have been made publicly available, similar to previous Bifrost simulations. This will allow the community to study realistic numerical simulations with a wider range of magnetic field configurations and physics modules than previously possible.

Alpha particle effects in burning tokamak plasmas: overview and specific examples

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sigmar, D.J.

1986-07-01

Using the total power balance of an ignited tokamak plasma as a guideline, a range of alpha driven effects is surveyed regarding their impact on achieving and maintaining fusion burn. Specific examples of MHD and kinetic modes and multi species transport dynamics are discussed, including the possible interaction of these categories of effects. This power balance approach rather than a straightforward enumeration of possible effects serves to reveal their non-linear dependence and the ensuing fragility of our understanding of the approach to and maintenance of ignition. Specific examples are given of the interaction between ..cap alpha..-power driven sawtoothing and idealmore » MHD stability, and direct ..cap alpha..-effects on MHD modes including kinetic corrections. Anomalous ion heat transport and central impurity peaking mechanisms and anomalous and collisional ..cap alpha..-transport including the ambipolar electric field are discussed.« less

Profiling of Current Transients in Capacitor Type Diamond Sensors.

PubMed

Gaubas, Eugenijus; Ceponis, Tomas; Meskauskaite, Dovile; Kazuchits, Nikolai

2015-06-08

The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier domain regimes. Simulations of the drift-diffusion current transients have been implemented by using dynamic models based on Shockley-Ramo's theorem, under injection of localized surface domains and of bulk charge carriers. The bipolar drift-diffusion regimes have been analyzed for the photo-induced bulk domain (packet) of excess carriers. The surface charge formation and polarization effects dependent on detector biasing voltage have been revealed. The screening effects ascribed to surface charge and to dynamics of extraction of the injected bulk excess carrier domain have been separated and explained. The parameters of drift mobility of the electrons μ(e) = 4000 cm2/Vs and holes μ(h) = 3800 cm2/Vs have been evaluated for CVD diamond using the perpendicular profiling of currents. The coefficient of carrier ambipolar diffusion D(a) = 97 cm2/s and the carrier recombination lifetime τ(R,CVD) ≌ 110 ns in CVD diamond were extracted by combining analysis of the transients of the sensor current and the microwave probed photoconductivity. The carrier trapping with inherent lifetime τR,HPHT ≌ 2 ns prevails in HPHT diamond.

Diffuse spreading of inhomogeneities in the ionospheric dusty plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shalimov, S. L., E-mail: pmsk7@mail.ru; Kozlovsky, A.

2015-08-15

According to results of sounding of the lower ionosphere at altitudes of about 100 km, the duration of radio reflections from sufficiently dense ionized meteor trails, which characterizes their lifetime, can reach a few tens of seconds to several tens of minutes. This is much longer than the characteristic spreading time (on the order of fractions of a second to several seconds) typical in meteor radar measurements. The presence of dust in the lower ionosphere is shown to affect the ambipolar diffusion coefficient, which determines the spreading of plasma inhomogeneities. It is found that the diffusion coefficient depends substantially onmore » the charge and size of dust grains, which allows one to explain the results of ionospheric sounding.« less

Ambipolar pentacene field-effect transistor with double-layer organic insulator

NASA Astrophysics Data System (ADS)

Kwak, Jeong-Hun; Baek, Heume-Il; Lee, Changhee

2006-08-01

Ambipolar conduction in organic field-effect transistor is very important feature to achieve organic CMOS circuitry. We fabricated an ambipolar pentacene field-effect transistors consisted of gold source-drain electrodes and double-layered PMMA (Polymethylmethacrylate) / PVA (Polyvinyl Alcohol) organic insulator on the ITO(Indium-tin-oxide)-patterned glass substrate. These top-contact geometry field-effect transistors were fabricated in the vacuum of 10 -6 Torr and minimally exposed to atmosphere before its measurement and characterized in the vacuum condition. Our device showed reasonable p-type characteristics of field-effect hole mobility of 0.2-0.9 cm2/Vs and the current ON/OFF ratio of about 10 6 compared to prior reports with similar configurations. For the n-type characteristics, field-effect electron mobility of 0.004-0.008 cm2/Vs and the current ON/OFF ratio of about 10 3 were measured, which is relatively high performance for the n-type conduction of pentacene field-effect transistors. We attributed these ambipolar properties mainly to the hydroxyl-free PMMA insulator interface with the pentacene active layer. In addition, an increased insulator capacitance due to double-layer insulator structure with high-k PVA layer also helped us to observe relatively good n-type characteristics.

Ferroelectric-induced carrier modulation for ambipolar transition metal dichalcogenide transistors

NASA Astrophysics Data System (ADS)

Yin, Lei; Wang, Zhenxing; Wang, Feng; Xu, Kai; Cheng, Ruiqing; Wen, Yao; Li, Jie; He, Jun

2017-03-01

For multifarious electronic and optoelectronic applications, it is indispensable exploration of stable and simple method to modulate electrical behavior of transition metal dichalcogenides (TMDs). In this study, an effective method to adjust the electrical properties of ambipolar TMDs is developed by introducing the dipole electric field from poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer. The transition from ambipolar to p-type conductive characteristics is realized, and the transistor performances are also significantly enhanced. Hole density of MoTe2- and WSe2-based back-gate field effect transistors increases by 4.4 and 2.5 times. Moreover, the corresponding hole mobilities are strikingly improved from 0.27 to 10.7 cm2 V-1 s-1 and from 1.6 to 59.8 cm2 V-1 s-1, respectively. After optimizing, p-channel MoTe2 phototransistors present ultrahigh responsivity of 3521 A/W, which is superior to most layered phototransistors. The remarkable control of conductive type, carrier concentration, and field-effect mobility of ambipolar TMDs via P(VDF-TrFE) treatment paves a way for realization of high-performance and versatile electronic and optoelectronic devices.

Core Radial Electric Field and Transport in Wendelstein 7-X Plasmas

NASA Astrophysics Data System (ADS)

Pablant, Novimir

2016-10-01

Results from the investigation of core transport and the role of the radial electric field profile (Er) in the first operational phase of the Wendelstein 7-X (W7-X) stellarator are presented. In stellarator plasmas, the details of the Er profile are expected to have a strong effect on both the particle and heat fluxes. Neoclassical particle fluxes are not intrinsically ambipolar, which leads to the formation of a radial electric field that enforces ambipolarity. The radial electric field is closely related to the perpendicular plasma flow (u⊥) through the force balance equation. This allows the radial electric field to be inferred from measurements of the perpendicular flow velocity from the x-ray imaging crystal spectrometer (XICS) and correlation reflectometry diagnostics. Large changes in the perpendicular rotation, on the order of Δu⊥ 5km /s (ΔEr 12kV / m), have been observed within a set of experiments where the heating power was stepped down from 2 MW to 0.6 MW . These experiments are examined in detail to explore the relationship between, heating power, response of the temperature and density profiles and the response of the radial electric field. Estimations of the core transport are based on power balance and utilize electron temperature (Te) profiles from the ECE and Thomson scattering, electron density profiles (ne) from interferometry and Thomson scattering, ion temperature (Ti) profiles from XICS, along with measurements of the total stored energy and radiated power. Also described are a set core impurity confinement experiments and results. Impurity confinement has been investigated through the injection of trace amount of argon impurity gas at the plasma edge in conjunction with measurements of the density of various ionization states of argon from the XICS and High Efficiency eXtreme-UV Overview Spectrometer (HEXOS) diagnostics. Finally the inferred Er and heat flux profiles are compared to initial neoclassical calculations using measured plasma profiles. On behalf of the W7-X Team.

Temperature gradients due to adiabatic plasma expansion in a magnetic nozzle

NASA Astrophysics Data System (ADS)

Sheehan, J. P.; Longmier, B. W.; Bering, E. A.; Olsen, C. S.; Squire, J. P.; Ballenger, M. G.; Carter, M. D.; Cassady, L. D.; Díaz, F. R. Chang; Glover, T. W.; Ilin, A. V.

2014-08-01

A mechanism for ambipolar ion acceleration in a magnetic nozzle is proposed. The plasma is adiabatic (i.e., does not exchange energy with its surroundings) in the diverging section of a magnetic nozzle so any energy lost by the electrons must be transferred to the ions via the electric field. Fluid theory indicates that the change in plasma potential is proportional to the change in average electron energy. These predictions were compared to measurements in the VX-200 experiment which has conditions conducive to ambipolar ion acceleration. A planar Langmuir probe was used to measure the plasma potential, electron density, and electron temperature for a range of mass flow rates and power levels. Axial profiles of those parameters were also measured, showing consistency with the adiabatic ambipolar fluid theory.

High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

PubMed

Song, Wooseok; Kwon, Soon Yeol; Myung, Sung; Jung, Min Wook; Kim, Seong Jun; Min, Bok Ki; Kang, Min-A; Kim, Sung Ho; Lim, Jongsun; An, Ki-Seok

2014-02-11

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, B.; Croxall, A. F.; Waldie, J., E-mail: jw353@cam.ac.uk

2016-02-08

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. Coulomb drag resistivity is a direct measure of the strength of interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter r{sub s} up to 14). Our ambipolar device design allows a comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions and also shows the effects of the different effective masses ofmore » electrons and holes in GaAs.« less

Calculations of neoclassical impurity transport in stellarators

NASA Astrophysics Data System (ADS)

Mollén, Albert; Smith, Håkan M.; Langenberg, Andreas; Turkin, Yuriy; Beidler, Craig D.; Helander, Per; Landreman, Matt; Newton, Sarah L.; García-Regaña, José M.; Nunami, Masanori

2017-10-01

The new stellarator Wendelstein 7-X has finished the first operational campaign and is restarting operation in the summer 2017. To demonstrate that the stellarator concept is a viable candidate for a fusion reactor and to allow for long pulse lengths of 30 min, i.e. ``quasi-stationary'' operation, it will be important to avoid central impurity accumulation typically governed by the radial neoclassical transport. The SFINCS code has been developed to calculate neoclassical quantities such as the radial collisional transport and the ambipolar radial electric field in 3D magnetic configurations. SFINCS is a cutting-edge numerical tool which combines several important features: the ability to model an arbitrary number of kinetic plasma species, the full linearized Fokker-Planck collision operator for all species, and the ability to calculate and account for the variation of the electrostatic potential on flux surfaces. In the present work we use SFINCS to study neoclassical impurity transport in stellarators. We explore how flux-surface potential variations affect the radial particle transport, and how the radial electric field is modified by non-trace impurities and flux-surface potential variations.

Gate modulation of proton transport in a nanopore.

PubMed

Mei, Lanju; Yeh, Li-Hsien; Qian, Shizhi

2016-03-14

Proton transport in confined spaces plays a crucial role in many biological processes as well as in modern technological applications, such as fuel cells. To achieve active control of proton conductance, we investigate for the first time the gate modulation of proton transport in a pH-regulated nanopore by a multi-ion model. The model takes into account surface protonation/deprotonation reactions, surface curvature, electroosmotic flow, Stern layer, and electric double layer overlap. The proposed model is validated by good agreement with the existing experimental data on nanopore conductance with and without a gate voltage. The results show that the modulation of proton transport in a nanopore depends on the concentration of the background salt and solution pH. Without background salt, the gated nanopore exhibits an interesting ambipolar conductance behavior when pH is close to the isoelectric point of the dielectric pore material, and the net ionic and proton conductance can be actively regulated with a gate voltage as low as 1 V. The higher the background salt concentration, the lower is the performance of the gate control on the proton transport.

Driven waves in a two-fluid plasma

NASA Astrophysics Data System (ADS)

Roberge, W. G.; Ciolek, Glenn E.

2007-12-01

We study the physics of wave propagation in a weakly ionized plasma, as it applies to the formation of multifluid, magnetohydrodynamics (MHD) shock waves. We model the plasma as separate charged and neutral fluids which are coupled by ion-neutral friction. At times much less than the ion-neutral drag time, the fluids are decoupled and so evolve independently. At later times, the evolution is determined by the large inertial mismatch between the charged and neutral particles. The neutral flow continues to evolve independently; the charged flow is driven by and slaved to the neutral flow by friction. We calculate this driven flow analytically by considering the special but realistic case where the charged fluid obeys linearized equations of motion. We carry out an extensive analysis of linear, driven, MHD waves. The physics of driven MHD waves is embodied in certain Green functions which describe wave propagation on short time-scales, ambipolar diffusion on long time-scales and transitional behaviour at intermediate times. By way of illustration, we give an approximate solution for the formation of a multifluid shock during the collision of two identical interstellar clouds. The collision produces forward and reverse J shocks in the neutral fluid and a transient in the charged fluid. The latter rapidly evolves into a pair of magnetic precursors on the J shocks, wherein the ions undergo force-free motion and the magnetic field grows monotonically with time. The flow appears to be self-similar at the time when linear analysis ceases to be valid.

High-mobility ambipolar ZnO-graphene hybrid thin film transistors

PubMed Central

Song, Wooseok; Kwon, Soon Yeol; Myung, Sung; Jung, Min Wook; Kim, Seong Jun; Min, Bok Ki; Kang, Min-A; Kim, Sung Ho; Lim, Jongsun; An, Ki-Seok

2014-01-01

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm2/V·s, and a high on-off ratio of 105. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs. PMID:24513629

Anomalous transport theory for the reversed field pinch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Terry, P.W.; Hegna, C.C; Sovinec, C.R.

1996-09-01

Physically motivated transport models with predictive capabilities and significance beyond the reversed field pinch (RFP) are presented. It is shown that the ambipolar constrained electron heat loss observed in MST can be quantitatively modeled by taking account of the clumping in parallel streaming electrons and the resultant self-consistent interaction with collective modes; that the discrete dynamo process is a relaxation oscillation whose dependence on the tearing instability and profile relaxation physics leads to amplitude and period scaling predictions consistent with experiment; that the Lundquist number scaling in relaxed plasmas driven by magnetic turbulence has a weak S{sup {minus}1/4} scaling; andmore » that radial E{times}B shear flow can lead to large reductions in the edge particle flux with little change in the heat flux, as observed in the RFP and tokamak. 24 refs.« less

A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport

NASA Astrophysics Data System (ADS)

Ghoreishi, Seyed Saleh; Yousefi, Reza; Saghafi, Kamyar; Aderang, Habib

2017-08-01

In this article, a detailed performance comparison is made between ballistic and dissipative quantum transport of metal oxide semicondutor-like graphene nanoribbon field-effect transistor, in ON and OFF-state conditions. By the self-consistent mode-space non-equilibrium Green's function approach, inter- and intraband scattering is accounted and the role of acoustic and optical phonon scattering on the performance of the devices is evaluated. We found that in this structure the dominant mechanism of scattering changes according to the ranges of voltage bias. Under large biasing conditions, the influence of optical phonon scattering becomes important. Also, the ambipolar and OFF-current are impressed by the phonon-assisted band-to-band tunneling and increased considerably compared to the ballistic conditions, although sub-threshold swing degrades due to optical phonon scattering.

Effect of Ambipolar Diffusion on Ion Abundances in Contracting Protostellar Cores

NASA Astrophysics Data System (ADS)

Ciolek, Glenn E.; Mouschovias, Telemachos Ch.

1998-09-01

Numerical simulations and analytical solutions have established that ambipolar diffusion can reduce the dust-to-gas ratio in magnetically and thermally supercritical cores during the epoch of core formation. We study the effect that this has on the ion chemistry in contracting protostellar cores and present a simplified analytical method that allows one to calculate the ion power-law exponent k (≡d ln ni/d ln nn, where ni and nn are the ion and neutral densities, respectively) as a function of core density. We find that, as in earlier numerical simulations, no single value of k can adequately describe the ion abundance for nn <~ 109 cm-3, a result that is contrary to the ``canonical'' value of k = 1/2 found in previous static equilibrium chemistry calculations and often used to study the effect of ambipolar diffusion in interstellar clouds. For typical cloud and grain parameters, reduction of the abundance of grains results in k > 1/2 during the core formation epoch (densities <~105 cm-3). As a consequence, observations of the degree of ionization in cores could be used, in principle, to determine whether ambipolar diffusion is responsible for core formation in interstellar molecular clouds. For densities >>105 cm-3, k is generally <<1/2.

Mixed ionic-electronic conductors for electrodes of barium cerate-based SOFCS

NASA Astrophysics Data System (ADS)

Wu, Zhonglin

Gadolinium doped barium cerates (BCGs) have been identified as promising electrolyte materials for intermediate-temperature solid oxide fuel cells (SOFCs). It is crucial to develop compatible electrode materials for such electrolytes. Mixed ionic-electronic conductor (MIEC) electrode materials developed for SOFCs based on yttrium-stabilized zirconia (YSZ) may be used as electrode materials for BCG-based SOFCs; but a careful re-evaluation is required due to the intrinsic differences between BCG and YSZ. The performance of these electrode materials depends critically the transport of ionic and electronic species as well as gas. Accordingly, a profound understanding of transport in MIEC electrodes is imperative to effective design of high performance SOFCs. In this thesis, ambipolar transport in composite MIEC electrodes has been modeled using percolation theory to predict the effect of volume fractions of constituent phases and porosity on ambipolar conductivity. Transport and electrode kinetics of homogeneous MIEC electrodes have also been formulated under a steady-state condition to predict the distributions of ionic defects and current carried by each defect in such electrodes. Effects of catalytic properties, transport properties, and microstructure of porous electrodes and interfaces on the electrode performance are investigated. Under the guidelines of the theoretical modeling, several MIEC electrode materials are developed. Lasb{1-x}Srsb{x}Cosb{1-x}Fesb{y}Osb{3-delta} homogeneous materials are studied as cathode materials. However, the interfacial resistance seems too high due to the lack of catalytic activity at intermediate temperatures. Results indicate that Ag-Bisb{1.5}Ysb{0.5}Osb3 composite MIECs are good cathode materials when the volume fractions of constituent phases and porosity are carefully controlled. Such electrodes have low interfacial resistance, better binding strength, and smaller thermal mismatch with the BCG electrolyte, compared to other metal electrodes (such as Pt and Ag). Ni-BCG composite MIECs are studied as anode materials. It is found that electrodes prepared from NiO and reduced to Ni in situ is not catalytically active because of diffusion of NiO into BCG, which forms a resistive layer. Electrodes prepared from Ni metal and fired in an inert or reducing atmosphere exhibit low interfacial resistance and good compatibility with BCG electrolyte. Stability of these developed electrode materials is investigated under conditions pertinent to SOFCs.

Influence of mean radial electric field on particle transport induced by RMPs in tokamak plasmas

NASA Astrophysics Data System (ADS)

Chen, Dunqiang; Xu, Yingfeng; Wang, Shaojie

2018-06-01

The quasi-linear theory of the particle diffusion coefficient including the finite Larmor radius effect and the mean radial electric field ( E r without shear) in a stochastic magnetic field is derived. The theory has been verified by comparing with test particle simulations and previous theory. It is found that E r can shift the wave-particle resonance position. The Er-shift effect mainly modifies the ion diffusion coefficients and leads to the modification of ion particle flux. By using the ambipolar condition, we obtained the balanced flux at the edge of a tokamak plasma and found good agreement with recent experimental observations.

Deep-down ionization of protoplanetary discs

NASA Astrophysics Data System (ADS)

Glassgold, A. E.; Lizano, S.; Galli, D.

2017-12-01

The possible occurrence of dead zones in protoplanetary discs subject to the magneto-rotational instability highlights the importance of disc ionization. We present a closed-form theory for the deep-down ionization by X-rays at depths below the disc surface dominated by far-ultraviolet radiation. Simple analytic solutions are given for the major ion classes, electrons, atomic ions, molecular ions and negatively charged grains. In addition to the formation of molecular ions by X-ray ionization of H2 and their destruction by dissociative recombination, several key processes that operate in this region are included, e.g. charge exchange of molecular ions and neutral atoms and destruction of ions by grains. Over much of the inner disc, the vertical decrease in ionization with depth into the disc is described by simple power laws, which can easily be included in more detailed modelling of magnetized discs. The new ionization theory is used to illustrate the non-ideal magnetohydrodynamic effects of Ohmic, Hall and Ambipolar diffusion for a magnetic model of a T Tauri star disc using the appropriate Elsasser numbers.

Fabrication of High-Performance Polymer Bulk-Heterojunction Solar Cells by the Interfacial Modifications III

DTIC Science & Technology

2011-04-30

University of Tennessee) 3. "An ambipolar to n-type transformation in pentacene -based organic field-effect transistors" Org. Electron. 12, 509 (2011...OFETs). An ambipolar to n-type transformation in pentacene -based organic field-effect transistors (OFETs) of Al source-drain electrodes had been...correlated with the interfacial interactions between Al electrodes and pentacene , as characterized by analyzing Near-edge X-ray absorption fine structure

Ambipolar diffusion drifts and dynamos in turbulent gases

NASA Technical Reports Server (NTRS)

Zweibel, Ellen G.

1988-01-01

Ambipolar drift in turbulent fluids are considered. Using mean-field electrodynamics, a two-scale theory originally used to study hydromagnetic dynamos, it is shown that magnetic fields can be advected by small-scale magnetosonic (compressional) turbulence or generated by Alfvenic (helical) turbulence. A simple dynamo theory is made and is compared with standard theories in which dissipation is caused by turbulent diffusion. The redistribution of magnetic flux in interstellar clouds is also discussed.

Photoresponse of an electrically tunable ambipolar graphene infrared thermocouple.

PubMed

Herring, Patrick K; Hsu, Allen L; Gabor, Nathaniel M; Shin, Yong Cheol; Kong, Jing; Palacios, Tomás; Jarillo-Herrero, Pablo

2014-02-12

We explore the photoresponse of an ambipolar graphene infrared thermocouple at photon energies close to or below monolayer graphene's optical phonon energy and electrostatically accessible Fermi energy levels. The ambipolar graphene infrared thermocouple consists of monolayer graphene supported by an infrared absorbing material, controlled by two independent electrostatic gates embedded below the absorber. Using a scanning infrared laser microscope, we characterize these devices as a function of carrier type and carrier density difference controlled at the junction between the two electrostatic gates. On the basis of these measurements, conducted at both mid- and near-infrared wavelengths, the primary detection mechanism can be modeled as a thermoelectric response. By studying the effect of different infrared absorbers, we determine that the optical absorption and thermal conduction of the substrate play the dominant role in the measured photoresponse of our devices. These experiments indicate a path toward hybrid graphene thermal detectors for sensing applications such as thermography and chemical spectroscopy.

On neoclassical impurity transport in stellarator geometry

NASA Astrophysics Data System (ADS)

García-Regaña, J. M.; Kleiber, R.; Beidler, C. D.; Turkin, Y.; Maaßberg, H.; Helander, P.

2013-07-01

The impurity dynamics in stellarators has become an issue of moderate concern due to the inherent tendency of the impurities to accumulate in the core when the neoclassical ambipolar radial electric field points radially inwards (ion root regime). This accumulation can lead to collapse of the plasma due to radiative losses, and thus limit high performance plasma discharges in non-axisymmetric devices. A quantitative description of the neoclassical impurity transport is complicated by the breakdown of the assumption of small E × B drift and trapping due to the electrostatic potential variation on a flux surface \\tilde{\\Phi} compared with those due to the magnetic field gradient. This work examines the impact of this potential variation on neoclassical impurity transport in the Large Helical Device heliotron. It shows that the neoclassical impurity transport can be strongly affected by \\tilde{\\Phi} . The central numerical tool used is the δf particle in cell Monte Carlo code EUTERPE. The \\tilde{\\Phi} used in the calculations is provided by the neoclassical code GSRAKE. The possibility of obtaining a more general \\tilde{\\Phi} self-consistently with EUTERPE is also addressed and a preliminary calculation is presented.

Tunneling Characteristics Depending on Schottky Barriers and Diffusion Current in SiOC.

PubMed

Oh, Teresa; Kim, Chy Hyung

2016-02-01

To obtain a diffusion current in SiOC, the aluminum doped zinc oxide films were deposited on SiOC/Si wafer by a RF magnetron sputtering. All the X-ray patterns of the SiOC films showed amorphous phases. The level of binding energy of Si atoms will lead to an additional potential modulation by long range Coulombic and covalent interactions with oxygen ions. The growth of the AZO film was affected by the characteristics of SiOC, resulting in similar trends in XPS spectra and a shift to higher AZO lattice d values than the original AZO d values in XRD analyses. The charges trapped by the defects at the interlayer between AZO and SiOC films induced the decreased mobility of carriers. In the absence of trap charges, AZO grown on SiOC film such as the sample prepared at O2 = 25 or 30 sccm, which has low charge carrier concentration and high mobility, showed high mobility in an ambipolar characteristic of oxide semiconductor due to the tunneling effect and diffusion current. The structural matching of an interface between AZO and amorphous SiOC enhanced the height of Schottky Barrier (SB), and then the mobility was increased by the tunneling effect from band to band through the high SB.

Profiling of Current Transients in Capacitor Type Diamond Sensors

PubMed Central

Gaubas, Eugenijus; Ceponis, Tomas; Meskauskaite, Dovile; Kazuchits, Nikolai

2015-01-01

The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier domain regimes. Simulations of the drift-diffusion current transients have been implemented by using dynamic models based on Shockley-Ramo’s theorem, under injection of localized surface domains and of bulk charge carriers. The bipolar drift-diffusion regimes have been analyzed for the photo-induced bulk domain (packet) of excess carriers. The surface charge formation and polarization effects dependent on detector biasing voltage have been revealed. The screening effects ascribed to surface charge and to dynamics of extraction of the injected bulk excess carrier domain have been separated and explained. The parameters of drift mobility of the electrons μe = 4000 cm2/Vs and holes μh = 3800 cm2/Vs have been evaluated for CVD diamond using the perpendicular profiling of currents. The coefficient of carrier ambipolar diffusion Da = 97 cm2/s and the carrier recombination lifetime τR,CVD ≌ 110 ns in CVD diamond were extracted by combining analysis of the transients of the sensor current and the microwave probed photoconductivity. The carrier trapping with inherent lifetime τR,HPHT ≌ 2 ns prevails in HPHT diamond. PMID:26061200

Multibit data storage states formed in plasma-treated MoS₂ transistors.

PubMed

Chen, Mikai; Nam, Hongsuk; Wi, Sungjin; Priessnitz, Greg; Gunawan, Ivan Manuel; Liang, Xiaogan

2014-04-22

New multibit memory devices are desirable for improving data storage density and computing speed. Here, we report that multilayer MoS2 transistors, when treated with plasmas, can dramatically serve as low-cost, nonvolatile, highly durable memories with binary and multibit data storage capability. We have demonstrated binary and 2-bit/transistor (or 4-level) data states suitable for year-scale data storage applications as well as 3-bit/transistor (or 8-level) data states for day-scale data storage. This multibit memory capability is hypothesized to be attributed to plasma-induced doping and ripple of the top MoS2 layers in a transistor, which could form an ambipolar charge-trapping layer interfacing the underlying MoS2 channel. This structure could enable the nonvolatile retention of charged carriers as well as the reversible modulation of polarity and amount of the trapped charge, ultimately resulting in multilevel data states in memory transistors. Our Kelvin force microscopy results strongly support this hypothesis. In addition, our research suggests that the programming speed of such memories can be improved by using nanoscale-area plasma treatment. We anticipate that this work would provide important scientific insights for leveraging the unique structural property of atomically layered two-dimensional materials in nanoelectronic applications.

End-boundary sheath potential, electron and ion energy distribution in the low-pressure non-ambipolar electron plasma

NASA Astrophysics Data System (ADS)

Chen, Lee; Chen, Zhiying; Funk, Merritt

2013-12-01

The end-boundary floating-surface sheath potential, electron and ion energy distribution functions (EEDf, IEDf) in the low-pressure non-ambipolar electron plasma (NEP) are investigated. The NEP is heated by an electron beam extracted from an inductively coupled electron-source plasma (ICP) through a dielectric injector by an accelerator located inside the NEP. This plasma's EEDf has a Maxwellian bulk followed by a broad energy continuum connecting to the most energetic group with energies around the beam energy. The NEP pressure is 1-3 mTorr of N2 and the ICP pressure is 5-15 mTorr of Ar. The accelerator is biased positively from 80 to 600 V and the ICP power range is 200-300 W. The NEP EEDf and IEDf are determined using a retarding field energy analyser. The EEDf and IEDf are measured at various NEP pressures, ICP pressures and powers as a function of accelerator voltage. The accelerator current and sheath potential are also measured. The IEDf reveals mono-energetic ions with adjustable energy and it is proportionally controlled by the sheath potential. The NEP end-boundary floating surface is bombarded by a mono-energetic, space-charge-neutral plasma beam. When the injected energetic electron beam is adequately damped by the NEP, the sheath potential is linearly controlled at almost a 1 : 1 ratio by the accelerator voltage. If the NEP parameters cannot damp the electron beam sufficiently, leaving an excess amount of electron-beam power deposited on the floating surface, the sheath potential will collapse and become unresponsive to the accelerator voltage.

Gravitational instability of filamentary molecular clouds, including ambipolar diffusion; non-isothermal filament

NASA Astrophysics Data System (ADS)

Hosseinirad, Mohammad; Abbassi, Shahram; Roshan, Mahmood; Naficy, Kazem

2018-04-01

Recent observations of the filamentary molecular clouds show that their properties deviate from the isothermal equation of state. Theoretical investigations proposed that the logatropic and the polytropic equations of state with negative indexes can provide a better description for these filamentary structures. Here, we aim to compare the effects of these softer non-isothermal equations of state with their isothermal counterpart on the global gravitational instability of a filamentary molecular cloud. By incorporating the ambipolar diffusion, we use the non-ideal magnetohydrodynamics framework for a filament that is threaded by a uniform axial magnetic field. We perturb the fluid and obtain the dispersion relation both for the logatropic and polytropic equations of state by taking the effects of magnetic field and ambipolar diffusion into account. Our results suggest that, in absence of the magnetic field, a softer equation of state makes the system more prone to gravitational instability. We also observed that a moderate magnetic field is able to enhance the stability of the filament in a way that is sensitive to the equation of state in general. However, when the magnetic field is strong, this effect is suppressed and all the equations of state have almost the same stability properties. Moreover, we find that for all the considered equations of state, the ambipolar diffusion has destabilizing effects on the filament.

Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

NASA Astrophysics Data System (ADS)

Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

2018-03-01

The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

Kinetic neoclassical transport in the H-mode pedestal

DOE PAGES

Battaglia, D. J.; Burrell, K. H.; Chang, C. S.; ...

2014-07-16

Multi-species kinetic neoclassical transport through the QH-mode pedestal and scrapeoff layer on DIII-D is calculated using XGC0, a 5D full-f particle-in-cell drift-kinetic solver with self-consistent neutral recycling and sheath potentials. We achieved quantitative agreement between the fluxdriven simulation and the experimental electron density, impurity density and orthogonal measurements of impurity temperature and flow profiles by adding random-walk particle diffusion to the guiding-center drift motion. Furthermore, we computed the radial electric field (Er) that maintains ambipolar transport across flux surfaces and to the wall self-consistently on closed and open magnetic field lines, and is in excellent agreement with experiment. The Ermore » inside the separatrix is the unique solution that balances the outward flux of thermal tail deuterium ions against the outward neoclassical electron flux and inward pinch of impurity and colder deuterium ions. Particle transport in the pedestal is primarily due to anomalous transport, while the ion heat and momentum transport is primarily due to the neoclassical transport. The full-f treatment quantifies the non-Maxwellian energy distributions that describe a number of experimental observations in low-collisionallity pedestals on DIII-D, including intrinsic co-Ip parallel flows in the pedestal, ion temperature anisotropy and large impurity temperatures in the scrape-off layer.« less

Banana fluxes in the plateau regime for a nonaxisymmetrically confined plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balescu, R.; Fantechi, S.

1990-09-01

The banana (or banana-plateau) fluxes, related to the generalized stresses {l angle}{bold B}{center dot}{del}{center dot}{pi}{sup {alpha}({ital n})}{r angle}, {l angle}{bold B}{sub {ital T}}{center dot}{del}{center dot}{pi}{sup {alpha}({ital n})}{r angle} have been determined in the plateau regime, for a plasma confined by a toroidal magnetic field of arbitrary geometry. The complete set of transport coefficients for both the parallel'' (ambipolar) and toroidal'' (nonambipolar) banana fluxes was obtained in the 13-moment (13M) approximation, going beyond the previously known expressions in the nonaxisymmetric case. The main emphasis is laid on the structure of the transport matrix and of its coefficients. It is shown thatmore » the Onsager symmetry of this matrix partly breaks down (for the mixed electron--ion coefficients) in a nonaxisymmetrically confined plasma.« less

Rocking-Chair Configuration in Ultrathin Lithium Vanadate-Graphene Hybrid Nanosheets for Electrical Modulation

PubMed Central

Zhu, Haiou; Qin, Xinming; Sun, Xu; Yan, Wensheng; Yang, Jinlong; Xie, Yi

2013-01-01

The ability to control electronic property of a material by externally applied voltage is greatly anticipated in modern electronics, and graphene provide potential application foreground for this issue on account of its exotic ambipolar transport property. In this study, we proposed that inorganic-graphene intercalated nanosheet is an effective solution to optimize the transport property of graphene. As an example, lithium vanadate-graphene (LiVO-graphene) alternately intercalated nanosheets were designed and successfully synthesized. Theoretical calculation implied that its rocking chair configuration may provide a new pathway to switch the carrier in graphene layer between p-type and n-type while the position of embedded Li ions is controlled by an external field. Thus, a demo transistor was fabricated with layer-by-layer overlapping of LiVO-graphene nanosheets which proved that this inorganic-graphene structure could be used for electrical modulation in electronic devices. PMID:23409237

Observing Ambipolar Behavior and Bandgap Engineering of MoS2 with Transport Measurements

NASA Astrophysics Data System (ADS)

Morris, Rachael; Wilson, Cedric; Hamblin, Glen; Tsuchikawa, Ryuichi; Deshpande, Vikram V.

Molybdenum disulfide is a transition metal semiconductor with a relatively large bandgap about 1.8 eV. In MoS2\\ it is expected that the bandgap is layer dependent and changes with the application of strain. In this talk I will outline our attempt to make simple field effect transistors with thin MoS2 on flexible substrates. Our aim was to see the bandgap of MoS2 directly via transport measurements using electrolytic gating, then apply uniaxial strain to a single layer MoS2 device to see the bandgap change. This was to be one way of confirming theoretical expectations, as well as compare with experimental results already obtained through photoluminescence spectroscopy. Though we did not obtain our target result with this stage of the experiment, future experimental work is planned. I will discuss the experimental method, the challenges of obtaining data and the results we obtained.

Type-controlled nanodevices based on encapsulated few-layer black phosphorus for quantum transport

NASA Astrophysics Data System (ADS)

Long, Gen; Xu, Shuigang; Shen, Junying; Hou, Jianqiang; Wu, Zefei; Han, Tianyi; Lin, Jiangxiazi; Wong, Wing Ki; Cai, Yuan; Lortz, Rolf; Wang, Ning

2016-09-01

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 cm2 V-1 s-1 and 8400 cm2 V-1 s-1 are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.

47 CFR 69.111 - Tandem-switched transport and tandem charge.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 47 Telecommunication 3 2011-10-01 2011-10-01 false Tandem-switched transport and tandem charge. 69... SERVICES (CONTINUED) ACCESS CHARGES Computation of Charges § 69.111 Tandem-switched transport and tandem...-switched transport shall consist of two rate elements, a transmission charge and a tandem switching charge...

Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

NASA Astrophysics Data System (ADS)

Seema; Chauhan, Sudakar Singh

2018-05-01

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

Novel red phosphorescent polymers bearing both ambipolar and functionalized Ir(III) phosphorescent moieties for highly efficient organic light-emitting diodes.

PubMed

Zhao, Jiang; Lian, Meng; Yu, Yue; Yan, Xiaogang; Xu, Xianbin; Yang, Xiaolong; Zhou, Guijiang; Wu, Zhaoxin

2015-01-01

A series of novel red phosphorescent polymers is successfully developed through Suzuki cross-coupling among ambipolar units, functionalized Ir(III) phosphorescent blocks, and fluorene-based silane moieties. The photophysical and electrochemical investigations indicate not only highly efficient energy-transfer from the organic segments to the phosphorescent units in the polymer backbone but also the ambipolar character of the copolymers. Benefiting from all these merits, the phosphorescent polymers can furnish organic light-emitting diodes (OLEDs) with exceptional high electroluminescent (EL) efficiencies with a current efficiency (η L ) of 8.31 cd A(-1) , external quantum efficiency (η ext ) of 16.07%, and power efficiency (η P ) of 2.95 lm W(-1) , representing the state-of-the-art electroluminescent performances ever achieved by red phosphorescent polymers. This work here might represent a new pathway to design and synthesize highly efficient phosphorescent polymers. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ambipolar Graphene-Quantum Dot Hybrid Vertical Photodetector with a Graphene Electrode.

PubMed

Che, Yongli; Zhang, Yating; Cao, Xiaolong; Zhang, Haiting; Song, Xiaoxian; Cao, Mingxuan; Yu, Yu; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

2017-09-20

A strategy to fabricate an ambipolar near-infrared vertical photodetector (VPD) by sandwiching a photoactive material as a channel film between the bottom graphene and top metal electrodes was developed. The channel length in the vertical architecture was determined by the channel layer thickness, which can provide an ultrashort channel length without the need for a high-precision manufacturing process. The performance of VPDs with two types of semiconductor layers, a graphene-PbS quantum dot hybrid (GQDH) and PbS quantum dots (QDs), was measured. The GQDH VPD showed better photoelectric properties than the QD VPD because of the high mobility of graphene doped in the channel. The GQDH VPD exhibited excellent photoresponse properties with a responsivity of 1.6 × 10 4 A/W in the p-type regime and a fast response speed with a rise time of 8 ms. The simple manufacture and the promising photoresponse of the GQDH VPDs reveal that an easy and effective way to fabricate high-performance ambipolar photodetectors was developed.

Electronic transport in bismuth selenide in the topological insulator regime

NASA Astrophysics Data System (ADS)

Kim, Dohun

The 3D topological insulators (TIs) have an insulating bulk but spin-momentum coupled metallic surface states stemming from band inversion due to strong spin-orbit interaction, whose existence is guaranteed by the topology of the band structure of the insulator. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate clear signature of the STI due to high level of bulk conduction. In this thesis, I present experimental results on the transport properties of TI material Bi2Se3 in the absence of bulk conduction (TI regime), achieved by applying novel p-type doping methods. Field effect transistors consisting of thin (thickness: 5-17 nm) Bi2Se3 are fabricated by mechanical exfoliation of single crystals, and a combination of conventional dielectric (300 nm thick SiO2) and electrochemical or chemical gating methods are used to move the Fermi energy through the surface Dirac point inside bulk band gap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be 60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se 3, which will have implications for topological electronic devices operating at room temperature. Along with semi-classical Boltzmann transport, I also discuss 2D weak anti-localization (WAL) behavior of the topological surface states. By investigating gate-tuned WAL behavior in thin (5-17 nm) TI films, I show that WAL in the TI regime is extraordinarily sensitive to the hybridization induced quantum mechanical tunneling between top and bottom topological surfaces, and interplay of phase coherence time and inter-surface tunneling time results in a crossover from two decoupled (top and bottom) symplectic 2D metal surfaces to a coherently coupled single channel. Furthermore, a complete suppression of WAL is observed in the 5 nm thick Bi2Se 3 film which was found to occur when the hybridization gap becomes comparable to the disorder strength.

Few-layer 1T‧ MoTe2 as gapless semimetal with thickness dependent carrier transport

NASA Astrophysics Data System (ADS)

Song, Peng; Hsu, Chuanghan; Zhao, Meng; Zhao, Xiaoxu; Chang, Tay-Rong; Teng, Jinghua; Lin, Hsin; Loh, Kian Ping

2018-07-01

Semimetal MoTe2 can be a type II Weyl semimetal in the bulk, but monolayer of this material is predicted to be quantum spin hall insulators. This dramatic change in electronic properties with number of layers is an excellent example of the dimensional effects of quantum transport. However, a detailed experimental study of the carrier transport and band structure of ultrathin semimetal MoTe2 is lacking so far. We performed magneto-transport measurements to study the conduction behavior and quantum phase coherence of 1T‧ MoTe2 as a function of its thickness. We show that due to a unique two-band transport mechanism (synergetic contribution from electron conduction and hole conduction), the conduction behavior of 1T‧ MoTe2 changes from metallic to p-type unipolar, and finally to ambipolar as the thickness decreases, suggesting that this effect can be used in devices by effectively controlling the thickness. Our transport studies, optical measurements and first-principles electronic structure calculations reveal that 1T‧ MoTe2 remains gapless down to a few (~2–3) layers. Despite being gapless, 1T‧ MoTe2 exhibits metal-insulator transition at 3-layer thickness, due to enhanced carrier localization effect.

Two-dimensional Radiative Magnetohydrodynamic Simulations of Partial Ionization in the Chromosphere. II. Dynamics and Energetics of the Low Solar Atmosphere

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martínez-Sykora, Juan; Pontieu, Bart De; Hansteen, Viggo H.

2017-09-20

We investigate the effects of interactions between ions and neutrals on the chromosphere and overlying corona using 2.5D radiative MHD simulations with the Bifrost code. We have extended the code capabilities implementing ion–neutral interaction effects using the generalized Ohm’s law, i.e., we include the Hall term and the ambipolar diffusion (Pedersen dissipation) in the induction equation. Our models span from the upper convection zone to the corona, with the photosphere, chromosphere, and transition region partially ionized. Our simulations reveal that the interactions between ionized particles and neutral particles have important consequences for the magnetothermodynamics of these modeled layers: (1) ambipolarmore » diffusion increases the temperature in the chromosphere; (2) sporadically the horizontal magnetic field in the photosphere is diffused into the chromosphere, due to the large ambipolar diffusion; (3) ambipolar diffusion concentrates electrical currents, leading to more violent jets and reconnection processes, resulting in (3a) the formation of longer and faster spicules, (3b) heating of plasma during the spicule evolution, and (3c) decoupling of the plasma and magnetic field in spicules. Our results indicate that ambipolar diffusion is a critical ingredient for understanding the magnetothermodynamic properties in the chromosphere and transition region. The numerical simulations have been made publicly available, similar to previous Bifrost simulations. This will allow the community to study realistic numerical simulations with a wider range of magnetic field configurations and physics modules than previously possible.« less

The Nonisothermal Stage of Magnetic Star Formation. I. Formulation of the Problem and Method of Solution

NASA Astrophysics Data System (ADS)

Kunz, Matthew W.; Mouschovias, Telemachos Ch.

2009-03-01

We formulate the problem of the formation and subsequent evolution of fragments (or cores) in magnetically supported, self-gravitating molecular clouds in two spatial dimensions. The six-fluid (neutrals, electrons, molecular and atomic ions, positively charged, negatively charged, and neutral grains) physical system is governed by the radiation, nonideal magnetohydrodynamic equations. The magnetic flux is not assumed to be frozen in any of the charged species. Its evolution is determined by a newly derived generalized Ohm's law, which accounts for the contributions of both elastic and inelastic collisions to ambipolar diffusion and Ohmic dissipation. The species abundances are calculated using an extensive chemical-equilibrium network. Both MRN and uniform grain size distributions are considered. The thermal evolution of the protostellar core and its effect on the dynamics are followed by employing the gray flux-limited diffusion approximation. Realistic temperature-dependent grain opacities are used that account for a variety of grain compositions. We have augmented the publicly available Zeus-MP code to take into consideration all these effects and have modified several of its algorithms to improve convergence, accuracy, and efficiency. Results of magnetic star formation simulations that accurately track the evolution of a protostellar fragment from a density sime103 cm-3 to a density sime1015 cm-3, while rigorously accounting for both nonideal MHD processes and radiative transfer, are presented in a separate paper.

Investigations of Turbulent Transport Channels in Gyrokinetic Simulations

NASA Astrophysics Data System (ADS)

Dimits, A. M.; Candy, J.; Guttenfelder, W.; Holland, C.; Howard, N.; Nevins, W. M.; Wang, E.

2014-10-01

Magnetic-field stochasticity arises due to microtearing perturbations, which can be driven linearly or nonlinearly (in cases where they are linearly stable), even at very modest values of the plasma beta. The resulting magnetic-flutter contribution may or may not be a significant component of the overall electron (particle and thermal) transport. Investigations of the effect of ExB flow shear on electron-drift magnetic-flutter diffusion coefficient Dedr (r ,v||) using perturbed magnetic fields from simulations, using the GYRO code, of ITG turbulence show a significant effect for electrons with parallel velocities v|| surprisingly far from the resonant velocity. We further examine changes in the radial dependence of this diffusion coefficient vs. v|| and which resonant magnetic-field perturbations are important to the values and radial structure of Dedr. The resulting electron transport fluxes are compared with the simulation results. Improvements over in treating the ambipolar field in the relationship between the magnetic (or drift) diffusion coefficients and the transport have been made in these comparisons. Prepared for US DOE by LLNL under Contract DE-AC52-07NA27344, by GA under Contract DE-FG03-95ER54309, and by PPPL under Contract DE-AC02-09CH11466.

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

DOE PAGES

Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

2016-05-04

Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe 2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at themore » double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

Performance improvement of doped TFET by using plasma formation concept

NASA Astrophysics Data System (ADS)

Soni, Deepak; Sharma, Dheeraj; Yadav, Shivendra; Aslam, Mohd.; Sharma, Neeraj

2018-01-01

Formation of abrupt doping profile at tunneling junction for the nanoscale tunnel field effect transistor (TFET) is a critical issue for attaining improved electrical behaviour. The realization of abrupt doping profile is more difficult in the case of physically doped TFETs due to material solubility limit. In this concern, we propose a novel design of TFET. For this, P+ (source)-I (channel)-N (drain) type structure has been considered, wherein a metal electrode is deposited over the source region. In addition to this, a negative voltage is applied to the source electrode (SE). It induces the surface plasma layer of holes in the source region, which is responsible for steepness in the bands at source/channel junction and provides the advantage of higher doping in source region without any addition of the physical impurity. The proposed modification is helpful for achieving steeper band bending at the source/channel interface, which enables higher tunneling generation rate of charge carriers at this interface and overcomes the issue of low ON-state current. Thus, the proposed device shows the increment of 2 decades in drain current and 252 mV reduction in threshold voltage compared with conventional device. The optimization of spacer length (LSG) between source/gate (LSG) and applied negative voltage (Vpg) over source electrode have been performed to obtain optimum drain current and threshold voltage (Vth). Further, for the suppression of ambipolar current, drain region is kept lightly doped, which reduces the ambipolar current up to level of Off state current. Moreover, in the proposed device gate electrode is underlapped for improving RF performance. It also reduces gate to drain capacitances (Cgd) and increases cut-off-frequency (fT), fmax, GBP, TFP. In addition to these, linearity analysis has been performed to validate the applicability of the device.

Grid-Free 2D Plasma Simulations of the Complex Interaction Between the Solar Wind and Small, Near-Earth Asteroids

NASA Technical Reports Server (NTRS)

Zimmerman, M. I.; Farrell, W. M.; Poppe, A. R.

2014-01-01

We present results from a new grid-free 2D plasma simulation code applied to a small, unmagnetized body immersed in the streaming solar wind plasma. The body was purposely modeled as an irregular shape in order to examine photoemission and solar wind plasma flow in high detail on the dayside, night-side, terminator and surface-depressed 'pocket' regions. Our objective is to examine the overall morphology of the various plasma interaction regions that form around a small body like a small near-Earth asteroid (NEA). We find that the object obstructs the solar wind flow and creates a trailing wake region downstream, which involves the interplay between surface charging and ambipolar plasma expansion. Photoemission is modeled as a steady outflow of electrons from illuminated portions of the surface, and under direct illumination the surface forms a non-monotonic or ''double-sheath'' electric potential upstream of the body, which is important for understanding trajectories and equilibria of lofted dust grains in the presence of a complex asteroid geometry. The largest electric fields are found at the terminators, where ambipolar plasma expansion in the body-sized night-side wake merges seamlessly with the thin photoelectric sheath on the dayside. The pocket regions are found to be especially complex, with nearby sunlit regions of positive potential electrically connected to unlit negative potentials and forming adjacent natural electric dipoles. For objects near the surface, we find electrical dissipation times (through collection of local environmental solar wind currents) that vary over at least 5 orders of magnitude: from 39 Micro(s) inside the near-surface photoelectron cloud under direct sunlight to less than 1 s inside the particle-depleted night-side wake and shadowed pocket regions

Anticipated Electrical Environment Within Permanently Shadowed Lunar Craters

NASA Technical Reports Server (NTRS)

Farrell, W. M.; Stubbs, T. J.; Halekas, J. S.; Killen, R. M.; Delory, G. T.; Collier, M. R.; Vondrak, R. R.

2010-01-01

Shadowed locations ncar the lunar poles arc almost certainly electrically complex regions. At these locations near the terminator, the local solar wind flows nearly tangential to the surface and interacts with large-scale topographic features such as mountains and deep large craters, In this work, we study the solar wind orographic effects from topographic obstructions along a rough lunar surface, On the leeward side of large obstructions, plasma voids are formed in the solar wind because of the absorption of plasma on the upstream surface of these obstacles, Solar wind plasma expands into such voids) producing an ambipolar potential that diverts ion flow into the void region. A surface potential is established on these leeward surfaces in order to balance the currents from the expansion-limited electron and ion populations, Wc find that there arc regions ncar the leeward wall of the craters and leeward mountain faces where solar wind ions cannot access the surface, leaving an electron-rich plasma previously identified as an "electron cloud." In this case, some new current is required to complete the closure for current balance at the surface, and we propose herein that lofted negatively charged dust is one possible (nonunique) compensating current source. Given models for both ambipolar and surface plasma processes, we consider the electrical environment around the large topographic features of the south pole (including Shoemaker crater and the highly varied terrain near Nobile crater), as derived from Goldstone radar data, We also apply our model to moving and stationary objects of differing compositions located on the surface and consider the impact of the deflected ion flow on possible hydrogen resources within the craters

Aggregation control in natural brush-printed conjugated polymer films and implications for enhancing charge transport

PubMed Central

Wang, Gang; Huang, Wei; Eastham, Nicholas D.; Fabiano, Simone; Manley, Eric F.; Zeng, Li; Wang, Binghao; Zhang, Xinan; Chen, Zhihua; Li, Ran; Chang, Robert P. H.; Chen, Lin X.; Bedzyk, Michael J.; Melkonyan, Ferdinand S.; Facchetti, Antonio; Marks, Tobin J.

2017-01-01

Shear-printing is a promising processing technique in organic electronics for microstructure/charge transport modification and large-area film fabrication. Nevertheless, the mechanism by which shear-printing can enhance charge transport is not well-understood. In this study, a printing method using natural brushes is adopted as an informative tool to realize direct aggregation control of conjugated polymers and to investigate the interplay between printing parameters, macromolecule backbone alignment and aggregation, and charge transport anisotropy in a conjugated polymer series differing in architecture and electronic structure. This series includes (i) semicrystalline hole-transporting P3HT, (ii) semicrystalline electron-transporting N2200, (iii) low-crystallinity hole-transporting PBDTT-FTTE, and (iv) low-crystallinity conducting PEDOT:PSS. The (semi-)conducting films are characterized by a battery of morphology and microstructure analysis techniques and by charge transport measurements. We report that remarkably enhanced mobilities/conductivities, as high as 5.7×/3.9×, are achieved by controlled growth of nanofibril aggregates and by backbone alignment, with the adjusted R2 (R2adj) correlation between aggregation and charge transport as high as 95%. However, while shear-induced aggregation is important for enhancing charge transport, backbone alignment alone does not guarantee charge transport anisotropy. The correlations between efficient charge transport and aggregation are clearly shown, while mobility and degree of orientation are not always well-correlated. These observations provide insights into macroscopic charge transport mechanisms in conjugated polymers and suggest guidelines for optimization. PMID:29109282

19 CFR 351.515 - Internal transport and freight charges for export shipments.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 19 Customs Duties 3 2011-04-01 2011-04-01 false Internal transport and freight charges for export... Internal transport and freight charges for export shipments. (a) Benefit—(1) In general. In the case of internal transport and freight charges on export shipments, a benefit exists to the extent that the charges...

The Discharging of Roving Objects in the Lunar Polar Regions

NASA Technical Reports Server (NTRS)

Jackson, T. L.; Farrell, W. M.; Killen, R. M.; Delory, G. T.; Halekas, J. S.; Stubbs, T. B.

2012-01-01

In 2007, the National Academy of Sciences identified the lunar polar regions as special environments: very cold locations where resources can be trapped and accumulated. These accumulated resources not only provide a natural reservoir for human explorers, but their very presence may provide a history of lunar impact events and possibly an indication of ongoing surface reactive chemistry. The recent LCROSS impacts confirm that polar crater floors are rich in material including approx 5%wt of water. An integral part of the special lunar polar environment is the solar wind plasma. Solar wind protons and electrons propagate outward from the Sun, and at the Moon's position have a nominal density of 5 el/cubic cm, flow speed of 400 km/sec, and temperature of 10 eV (approx. equal 116000K). At the sub-solar point, the flow of this plasma is effectively vertically incident at the surface. However, at the poles and along the lunar terminator region, the flow is effectively horizontal over the surface. As recently described, in these regions, local topography has a significant effect on the solar wind flow. Specifically, as the solar wind passes over topographic features like polar mountains and craters, the plasma flow is obstructed and creates a distinct plasma void in the downstream region behind the obstacle. An ion sonic wake structure forms behind the obstacle, not unlike that which forms behind a space shuttle. In the downstream region where flow is obstructed, the faster moving solar wind electrons move into the void region ahead of the more massive ions, thereby creating an ambipolar electric field pointing into the void region. This electric field then deflects ion trajectories into the void region by acting as a vertical inward force that draws ions to the surface. This solar wind 'orographic' effect is somewhat analogous to that occurring with terrestrial mountains. However, in the solar wind, the ambipolar E-field operating in the collision less plasma replaces the gradient in pressure that would act in a collisional neutral gas. Human systems (roving astronauts or robotic systems created by humans) may be required to gain access to the crater floor to collect resources such as water and other cold-trapped material. However, these human systems are also exposed to the above-described harsh thermal and electrical environments in the region. Thus, the objective of this work is to determine the nature of charging and discharging for a roving object in the cold, plasma-starved lunar polar regions. To accomplish this objective, we first define the electrical charging environment within polar craters. We then describe the subsequent charging of a moving object near and within such craters. We apply a model of an astronaut moving in periodic steps/cadence over a surface regolith. In fact the astronaut can be considered an analog for any kind of moving human system. An astronaut stepping over the surface accumulates charge via contact electrification (tribocharging) v.lith the lunar regolith. We present a model of this tribo-charge build-up. Given the environmental plasma in the region, we determine herein the dissipation time for the astronaut to bleed off its excess charge into the surrounding plasma.

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure.

PubMed

Khan, Muhammad Atif; Rathi, Servin; Lee, Changhee; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo Hyeb; Kim, Gil-Ho

2018-06-25

Two-dimensional (2D) materials based heterostructures provide a unique platform where interaction between stacked 2D layers can enhance the electrical and opto-electrical properties as well as give rise to interesting new phenomena. Here, operation of a van der Waals heterostructure device comprising of vertically stacked bi-layer MoS 2 and few layered WSe 2 has been demonstrated in which atomically thin MoS 2 layer has been employed as a tunneling layer to the underlying WSe 2 layer. In this way, simultaneous contacts to both MoS 2 and WSe 2 2D layers have been established by forming direct MS (metal semiconductor) to MoS 2 and tunneling based MIS (metal insulator semiconductor) contacts to WSe 2 , respectively. The use of MoS 2 as a dielectric tunneling layer results in improved contact resistance (80 kΩ-µm) for WSe 2 contact, which is attributed to reduction in effective Schottky barrier height and is also confirmed from the temperature dependent measurement. Further, this unique contact engineering and type II band alignment between MoS 2 and WSe 2 enables a selective and independent carrier transport across the respective layers. This contact engineered dual channel heterostructure exhibits an excellent gate control and both channel current and carrier types can be modulated by the vertical electric field of the gate electrode, which is also reflected in on/off ratio of 10 4 for both electrons (MoS 2 ) and holes (WSe 2 ) channels. Moreover, the charge transfer at the heterointerface is studied quantitatively from the shift in the threshold voltage of the pristine MoS 2 and heterostructure device, which agrees with the carrier recombination induced optical quenching as observed in the Raman spectra of the pristine and heterostructure layers. This observation of dual channel ambipolar transport enabled by the hybrid tunneling contacts and strong interlayer coupling can be utilized for high performance opto-electrical devices and applications.

Exp(1076) Shades of Black: Aspects of Black Hole Microstates

NASA Astrophysics Data System (ADS)

Vasilakis, Orestis

In this thesis we examine smooth supergravity solutions known as "microstate geometries". These solutions have neither a horizon, nor a singularity, yet they have the same asymptotic structure and conserved charges as black holes. Specifically we study supersymmetric and extremal non-supersymmetric solutions. The goal of this program is to construct enough microstates to account for the correct scaling behavior of the black hole entropy with respect to the charges within the supergravity approximation. For supersymmetric systems that are ⅛-BPS, microstate geometries account so far only for Q5/4 of the total entropy S ˜ Q3/2, while for non-supersymmetric systems the known microstate geometries are sporadic. For the supersymmetric case we construct solutions with three and four charges. Five-dimensional systems with three and four charges are ⅛-BPS. Thus they admit macroscopic horizons making the supergravity approximation valid. For the three-charge case we present some steps towards the construction of the superstratum, a microstate geometry depending on arbitrary functions of two variables, which is expected to provide the necessary entropy for this class of solutions. Specifically we construct multiple concentric solutions with three electric and two dipole magnetic charges which depend on arbitrary functions of two variables and examine their properties. These solutions have no KKM charge and thus are singular. For the four-charge case we construct microstate geometries by extending results available in the literature for three charges. We find smooth solutions in terms of bubbled geometries with ambipolar Gibbons-Hawking base space and by constructing the relevant supertubes. In the non-supersymmetric case we work with a three-charge system of extremal black holes known as almost-BPS, which provides a controlled way of breaking sypersymmetry. By using supertubes we construct the first systematic example of a family of almost-BPS microstate geometries and examine the moduli space of solutions. Furthermore by using brane probe analysis we show that, despite the breaking of supersymmetry, almost-BPS solutions receive no quantum corrections and thus must be subject to some kind of non-renormalization theorem.

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

PubMed

Li, Dong; Wang, Biao; Chen, Mingyuan; Zhou, Jun; Zhang, Zengxing

2017-06-01

p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe 2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe 2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe 2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On the electrophonic generation of audio frequency sound by meteors

NASA Astrophysics Data System (ADS)

Kelley, Michael C.; Price, Colin

2017-04-01

Recorded for centuries, people can hear and see meteors nearly concurrently. Electromagnetic energy clearly propagates at the speed of light and converts to sound (called electrophonics) when coupled to metals. An explanation for the electromagnetic energy source is suggested. Coma ions around the meteor head can easily travel across magnetic field lines up to 120 km. The electrons, however, are tied to magnetic field lines, since they must gyrate around the field above 75 km. A large ambipolar electric field must be generated to conserve charge neutrality. This localized electric field maps to the E region then drives a large Hall current that launches the electromagnetic wave. Using antenna theory and following, a power flux of over 10-8 W/m2 at the ground is found. Electrophonic conversion to sound efficiency then needs to be only 0.1% to explain why humans can hear and see meteors nearly concurrently.

Improved color stability of white organic light-emitting diodes without interlayer between red, orange and blue emission layers

NASA Astrophysics Data System (ADS)

Xue, Kaiwen; Chen, Ping; Duan, Yu; Sheng, Ren; Han, Guangguang; Zhao, Yi

2016-03-01

We demonstrated color stability improved white phosphorescent organic light-emitting diodes (WOLEDs) based on red, orange and blue emission layers. Iridium(III) Bis(3,5-diflouro)-2-(2-pyridyl)phenyl-(2-carboxypyridyl) was doped into red emission layer (R-EML) and orange emission layer (O-EML) to lower the electrons injection barrier and facilitate the ambipolar charge carriers balance. Consequently, the recombination region was extended to the R-EML and O-EML, leading to the excellently stable spectra and the reduction of triplet-triplet annihilation. Then the resulting device with a negligible Commission International de L'Eclairage coordinates shift of (0.003, 0.007) within a wide luminance range as well as a high color rendering index of 90 was gained, which was comparable to the profit caused by the conventional method of introducing the interlayer. And the emission mechanism of the WOLEDs was also discussed.

Study on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dae-Kyu; Oh, Jeong-Do; Shin, Eun-Sol

2014-04-28

The neutral cluster beam deposition (NCBD) method has been applied to the production and characterization of ambipolar, heterojunction-based organic light-emitting field-effect transistors (OLEFETs) with a top-contact, multi-digitated, long-channel geometry. Organic thin films of n-type N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and p-type copper phthalocyanine were successively deposited on the hydroxyl-free polymethyl-methacrylate (PMMA)-coated SiO{sub 2} dielectrics using the NCBD method. Characterization of the morphological and structural properties of the organic active layers was performed using atomic force microscopy and X-ray diffraction. Various device parameters such as hole- and electron-carrier mobilities, threshold voltages, and electroluminescence (EL) were derived from the fits of the observed current-voltage andmore » current-voltage-light emission characteristics of OLEFETs. The OLEFETs demonstrated good field-effect characteristics, well-balanced ambipolarity, and substantial EL under ambient conditions. The device performance, which is strongly correlated with the surface morphology and the structural properties of the organic active layers, is discussed along with the operating conduction mechanism.« less

Mechanisms of Ionospheric Mass Escape

NASA Technical Reports Server (NTRS)

Moore, T. E.; Khazanov, G. V.

2010-01-01

The dependence of ionospheric O+ escape flux on electromagnetic energy flux and electron precipitation into the ionosphere is derived for a hypothetical ambipolar pick-up process, powered the relative motion of plasmas and neutral upper atmosphere, and by electron precipitation, at heights where the ions are magnetized but influenced by photo-ionization, collisions with gas atoms, ambipolar and centrifugal acceleration. Ion pick-up by the convection electric field produces "ring-beam" or toroidal velocity distributions, as inferred from direct plasma measurements, from observations of the associated waves, and from the spectra of incoherent radar echoes. Ring-beams are unstable to plasma wave growth, resulting in rapid relaxation via transverse velocity diffusion, into transversely accelerated ion populations. Ion escape is substantially facilitated by the ambipolar potential, but is only weakly affected by centrifugal acceleration. If, as cited simulations suggest, ion ring beams relax into non-thermal velocity distributions with characteristic speed equal to the local ion-neutral flow speed, a generalized "Jeans escape" calculation shows that the escape flux of ionospheric O+ increases with Poynting flux and with precipitating electron density in rough agreement with observations.

Theoretical study of anisotropic mobility in ladder-type molecule organic semiconductors

NASA Astrophysics Data System (ADS)

Wei, Hui-Ling; Liu, Yu-Fang

2014-09-01

The properties of two ladder-type semiconductors {M1: 2,2'-(2,7-dihexy1-4,9-dihydro- s-indaceno[1,2- b:5,6- b']dithiophene-4,9-diylidene) dimalononitrile and M2: 2,7-dihexy1-4,9-dihydro- s-indaceno[1,2- b:5,6- b']dithiophene-4,9-dione} as the n-type and ambipolar organic materials are systematically investigated using the first-principle density functional theory combined with the Marcus-Hush electron transfer theory. It is found that the substitution of M1 induces large changes in its electron-transfer mobility of 1.370 cm2 V-1 s-1. M2 has both large electron- and hole-transfer mobility of 0.420 and 0.288 cm2 V-1 s-1, respectively, which indicates that M2 is potentially a high efficient ambipolar organic semiconducting material. Both the M1 and M2 crystals show remarkable anisotropic behavior. A proper design of the n-type and ambipolar organic electronic materials, which may have high mobility performance, is suggested based on the investigated two molecules.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung

Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while themore » electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.« less

Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

PubMed Central

2014-01-01

Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

PubMed

Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

2017-10-11

The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

Ionospheres of the terrestrial planets

NASA Astrophysics Data System (ADS)

Schunk, R. W.; Nagy, A. F.

1980-11-01

The theory and observations relating to the ionospheres of the terrestrial planets Venus, the earth, and Mars are reviewed. Emphasis is placed on comparing the basic differences and similarities between the planetary ionospheres. The review covers the plasma and electric-magnetic field environments that surround the planets, the theory leading to the creation and transport of ionization in the ionospheres, the relevant observations, and the most recent model calculations. The theory section includes a discussion of ambipolar diffusion in a partially ionized plasma, diffusion in a fully ionized plasma, supersonic plasma flow, photochemistry, and heating and cooling processes. The sections on observations and model calculations cover the neutral atmosphere composition, the ion composition, the electron density, and the electron, ion, and neutral temperatures.

Position-dependent effects of polylysine on Sec protein transport.

PubMed

Liang, Fu-Cheng; Bageshwar, Umesh K; Musser, Siegfried M

2012-04-13

The bacterial Sec protein translocation system catalyzes the transport of unfolded precursor proteins across the cytoplasmic membrane. Using a recently developed real time fluorescence-based transport assay, the effects of the number and distribution of positive charges on the transport time and transport efficiency of proOmpA were examined. As expected, an increase in the number of lysine residues generally increased transport time and decreased transport efficiency. However, the observed effects were highly dependent on the polylysine position in the mature domain. In addition, a string of consecutive positive charges generally had a more significant effect on transport time and efficiency than separating the charges into two or more charged segments. Thirty positive charges distributed throughout the mature domain resulted in effects similar to 10 consecutive charges near the N terminus of the mature domain. These data support a model in which the local effects of positive charge on the translocation kinetics dominate over total thermodynamic constraints. The rapid translocation kinetics of some highly charged proOmpA mutants suggest that the charge is partially shielded from the electric field gradient during transport, possibly by the co-migration of counter ions. The transport times of precursors with multiple positively charged sequences, or "pause sites," were fairly well predicted by a local effect model. However, the kinetic profile predicted by this local effect model was not observed. Instead, the transport kinetics observed for precursors with multiple polylysine segments support a model in which translocation through the SecYEG pore is not the rate-limiting step of transport.

Position-dependent Effects of Polylysine on Sec Protein Transport*

PubMed Central

Liang, Fu-Cheng; Bageshwar, Umesh K.; Musser, Siegfried M.

2012-01-01

The bacterial Sec protein translocation system catalyzes the transport of unfolded precursor proteins across the cytoplasmic membrane. Using a recently developed real time fluorescence-based transport assay, the effects of the number and distribution of positive charges on the transport time and transport efficiency of proOmpA were examined. As expected, an increase in the number of lysine residues generally increased transport time and decreased transport efficiency. However, the observed effects were highly dependent on the polylysine position in the mature domain. In addition, a string of consecutive positive charges generally had a more significant effect on transport time and efficiency than separating the charges into two or more charged segments. Thirty positive charges distributed throughout the mature domain resulted in effects similar to 10 consecutive charges near the N terminus of the mature domain. These data support a model in which the local effects of positive charge on the translocation kinetics dominate over total thermodynamic constraints. The rapid translocation kinetics of some highly charged proOmpA mutants suggest that the charge is partially shielded from the electric field gradient during transport, possibly by the co-migration of counter ions. The transport times of precursors with multiple positively charged sequences, or “pause sites,” were fairly well predicted by a local effect model. However, the kinetic profile predicted by this local effect model was not observed. Instead, the transport kinetics observed for precursors with multiple polylysine segments support a model in which translocation through the SecYEG pore is not the rate-limiting step of transport. PMID:22367204

A study of effects of electrode contacts on performance of organic-based light-emitting field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Dae-Kyu; Choi, Jong-Ho

2018-02-01

Herein is presented a comparative performance analysis of heterojunction organic-based light-emitting field-effect transistors (OLEFETs) with symmetric (Au only) and asymmetric (Au and LiF/Al) electrode contacts. The devices had a top source-drain contact with long-channel geometry and were produced by sequentially depositing p-type pentacene and n-type N,N‧-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) using a neutral cluster beam deposition apparatus. The spectroscopic, structural and morphological properties of the organic thin films were examined using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) method, laser scanning confocal and atomic force microscopy (LSCM, AFM). Based upon the growth of high-quality, well-packed crystalline thin films, the devices demonstrated ambipolar field-effect characteristics, stress-free operational stability, and light emission under ambient conditions. Various device parameters were derived from the fits of the observed characteristics. The hole mobilities were nearly equal irrespective of the electrode contacts, whereas the electron mobilities of the transistors with LiF/Al drain electrodes were higher due to the low injection barrier. For the OLEFETs with symmetric electrodes, electroluminescence (EL) occurred only in the vicinity of the hole-injecting electrode, whereas for the OLEFETs with asymmetric electrodes, the emission occurred in the vicinity of both hole- and electron-injecting electrodes. By tuning the carrier injection and transport through high- and low-work function metals, the hole-electron recombination sites could be controlled. The operating conduction and light emission mechanism are discussed with the aid of EL images obtained using a charge-coupled device (CCD) camera.

Measurements and modeling of the impact of weak magnetic fields on the plasma properties of a planar slot antenna driven plasma source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoshikawa, Jun, E-mail: jun.yoshikawa@tel.com; Susa, Yoshio; Ventzek, Peter L. G.

The radial line slot antenna plasma source is a type of surface wave plasma source driven by a planar slot antenna. Microwave power is transmitted through a slot antenna structure and dielectric window to a plasma characterized by a generation zone adjacent to the window and a diffusion zone that contacts a substrate. The diffusion zone is characterized by a very low electron temperature. This renders the source useful for soft etch applications and thin film deposition processes requiring low ion energy. Another property of the diffusion zone is that the plasma density tends to decrease from the axis tomore » the walls under the action of ambipolar diffusion at distances far from where the plasma is generated. A previous simulation study [Yoshikawa and. Ventzek, J. Vac. Sci. Technol. A 31, 031306 (2013)] predicted that the anisotropy in transport parameters due to weak static magnetic fields less than 50 G could be leveraged to manipulate the plasma profile in the radial direction. These simulations motivated experimental tests in which weak magnetic fields were applied to a radial line slot antenna source. Plasma absorption probe measurements of electron density and etch rate showed that the magnetic fields remote from the wafer were able to manipulate both parameters. A summary of these results is presented in this paper. Argon plasma simulation trends are compared with experimental plasma and etch rate measurements. A test of the impact of magnetic fields on charge up damage showed no perceptible negative effect.« less

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

NASA Astrophysics Data System (ADS)

Fuhrer, Michael

2013-03-01

The three dimensional strong topological insulator (STI) is a new phase of electronic matter which is distinct from ordinary insulators in that it supports on its surface a conducting two-dimensional surface state whose existence is guaranteed by topology. I will discuss experiments on the STI material Bi2Se3, which has a bulk bandgap of 300 meV, much greater than room temperature, and a single topological surface state with a massless Dirac dispersion. Field effect transistors consisting of thin (3-20 nm) Bi2Se3 are fabricated from mechanically exfoliated from single crystals, and electrochemical and/or chemical gating methods are used to move the Fermi energy into the bulk bandgap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be ~60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se3, which will have implications for topological electronic devices operating at room temperature. As samples are made thinner, coherent coupling of the top and bottom topological surfaces is observed through the magnitude of the weak anti-localization correction to the conductivity, and, in the thinnest Bi2Se3 samples (~ 3 nm), in thermally-activated conductivity reflecting the opening of a bandgap.

Charge rearrangement deduced from nearby electric field measurements of an intracloud flash with K‒changes

NASA Astrophysics Data System (ADS)

Hager, William W.; Feng, Wei

2013-09-01

An intracloud flash near Langmuir Laboratory is analyzed to determine the net rearrangement of charge. The analysis employed data from a balloon borne electric field sensor, or Esonde, that was within a few hundred meters of the lightning channel, data from a similar Esonde on a mountain about 6.4 km from the balloon, and data from the New Mexico Institute of Mining and Technology Lightning Mapping Array (LMA). The recovery of the charge transport required the solution of Poisson's equation over the mountainous terrain surrounding Langmuir Laboratory and the solution of a vastly under‒determined system of equations. The charge movement is analyzed using a new smooth charge transport model that incorporates constraints in the least squares fitting process through the use of penalty terms to smooth the charge movement and prevent data overfitting. The electric field measurements were consistent with about 26% of the negative charge being transported to the end of the channel, 36% deposited along the channel in the positive region, 8% deposited near the start of the channel in the positive region, and 30% deposited in another positive region several kilometers beneath the main channel. The transport of negative charge to a lower positive region occurred during the K‒processes when some negative charge was also deposited along the main channel in the upper positive region. Hence, the charge transport process during the K‒processes amounted to a tripolar charge rearrangement where the charge from the negative region was transported to two distinct positive regions, the positive region along the main channel and a lower positive region beneath the main channel. High altitude, widely scattered LMA sources beyond the end of the main channel could indicate the existence of streamers which transported the end‒of‒channel charge into the surrounding volume. Although the LMA showed the development of two upper channels, the charge transport analysis showed that measurable charge transport only occurred on one of the channels. The channel that did not transport charge was missing the high altitude, widely scattered LMA sources seen at the end of the channel that carried charge.

Charge transport network dynamics in molecular aggregates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jackson, Nicholas E.; Chen, Lin X.; Ratner, Mark A.

2016-07-20

Due to the nonperiodic nature of charge transport in disordered systems, generating insight into static charge transport networks, as well as analyzing the network dynamics, can be challenging. Here, we apply time-dependent network analysis to scrutinize the charge transport networks of two representative molecular semiconductors: a rigid n-type molecule, perylenediimide, and a flexible p-type molecule, bBDT(TDPP)2. Simulations reveal the relevant timescale for local transfer integral decorrelation to be ~100 fs, which is shown to be faster than that of a crystalline morphology of the same molecule. Using a simple graph metric, global network changes are observed over timescales competitive withmore » charge carrier lifetimes. These insights demonstrate that static charge transport networks are qualitatively inadequate, whereas average networks often overestimate network connectivity. Finally, a simple methodology for tracking dynamic charge transport properties is proposed.« less

New organic photorefractive material composed of a charge-transporting dendrimer and a stilbene chromophore

NASA Astrophysics Data System (ADS)

Bai, Jaeil; Ducharme, Stephen; Leonov, Alexei G.; Lu, Liu; Takacs, James M.

1999-10-01

In this report, we introduce new organic photorefractive composites consisting of charge transporting den-drimers highly doped with a stilbene nonlinear optic chromophore, The purpose of making these composites is to improve charge transport, by reducing inhomogeneity when compared to ordinary polymer-based systems. Because the structure of this material gives us freedom to control the orientation of charge transport agents synthetically, we can study the charge transport mechanism more systematically than in polymers. We discuss this point and present the characterization results for this material.

Surface charge accumulation of particles containing radionuclides in open air

DOE PAGES

Kim, Yong-ha; Yiacoumi, Sotira; Tsouris, Costas

2015-05-01

Radioactivity can induce charge accumulation on radioactive particles. But, electrostatic interactions caused by radioactivity are typically neglected in transport modeling of radioactive plumes because it is assumed that ionizing radiation leads to charge neutralization. The assumption that electrostatic interactions caused by radioactivity are negligible is evaluated here by examining charge accumulation and neutralization on particles containing radionuclides in open air. Moreover, a charge-balance model is employed to predict charge accumulation on radioactive particles. It is shown that particles containing short-lived radionuclides can be charged with multiple elementary charges through radioactive decay. The presence of radioactive particles can significantly modify themore » particle charge distribution in open air and yield an asymmetric bimodal charge distribution, suggesting that strong electrostatic particle interactions may occur during short- and long-range transport of radioactive particles. Possible effects of transported radioactive particles on electrical properties of the local atmosphere are reported. Our study offers insight into transport characteristics of airborne radionuclides. Results are useful in atmospheric transport modeling of radioactive plumes.« less

Observation and interpretation of energy efficient, diffuse direct current glow discharge at atmospheric pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Jie, E-mail: tangjie1979@opt.ac.cn; Jiang, Weiman; Wang, Yishan

2015-08-24

A diffuse direct-current glow discharge was realized with low energy consumption and high energy utilization efficiency at atmospheric pressure. The formation of diffuse discharge was demonstrated by examining and comparing the electrical properties and optical emissions of plasmas. In combination with theoretical derivation and calculation, we draw guidelines that appearance of nitrogen ions at low electron density is crucial to enhance the ambipolar diffusion for the expansion of discharge channel and the increasing ambipolar diffusion near the cathode plays a key role in the onset of diffuse discharge. An individual-discharge-channel expansion model is proposed to explain the diffuse discharge formation.

US-Japan bumpy torus workshop. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1985-01-01

A US-Japan ELMO Bumpy Torus Workshop was held on November 1 and 2, 1985 in Encinitas, California. The workshop focused on recent results from the Nagoya Bumpy Torus, EBT-1/S, and the proposed EBS program. The major results presented at the Workshop included extensive theoretical analyses of diamagnetic well formation by hot-electron rings in SM-1, a comprehensive review of recent experiments in NBT, and divertor concepts for EBS. Ikegami and Fujiwara summarized work on ring- and core-plasma properties, including conditions for stable ring operation, measurements of ring beta and the scaling of stored energy with heating power. Fujiwara reported a numbermore » of exciting results on ambipolar potential control in NBT. The successful outcome of ICRF experiments using twelve antennas was particularly striking. In operating regimes characterized by positive ambipolar potentials, the plasma density reached values in excess of 10/sup 13/cm/sup -3/ with ion temperatures in the 200 to 400 eV range. The plasma potential decayed with a time constant approach 0.1 sec after the ICRF pulse ended. These results appeared to be similar to predictions made over the past several years of greatly improved particle confinement in the positive ambipolar potential state.« less

Tunable Transport Gap in Phosphorene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Saptarshi; Zhang, Wei; Demarteau, Marcel

2014-08-11

In this paper, we experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ~0.3 to ~1.0 eV when the flake thickness is scaled down from bulk to a single layer. As a consequence, the ON current, the OFF current, and the current ON/OFF ratios of phosphorene field effect transistors (FETs) were found to be significantly impacted by the layer thickness. The transport gap was determined from the transfer characteristics of phosphorene FETs using a robust technique that has not been reported before. The detailed mathematical model is also provided. By scaling the thickness of the gatemore » oxide, we were also able to demonstrate enhanced ambipolar conduction in monolayer and few layer phosphorene FETs. The asymmetry of the electron and the hole current was found to be dependent on the layer thickness that can be explained by dynamic changes of the metal Fermi level with the energy band of phosphorene depending on the layer number. We also extracted the Schottky barrier heights for both the electron and the hole injection as a function of the layer thickness. In conclusion, we discuss the dependence of field effect hole mobility of phosphorene on temperature and carrier concentration.« less

47 CFR 69.125 - Dedicated signalling transport.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 3 2010-10-01 2010-10-01 false Dedicated signalling transport. 69.125 Section... (CONTINUED) ACCESS CHARGES Computation of Charges § 69.125 Dedicated signalling transport. (a) Dedicated signalling transport shall consist of two elements, a signalling link charge and a signalling transfer point...

47 CFR 69.125 - Dedicated signalling transport.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 47 Telecommunication 3 2011-10-01 2011-10-01 false Dedicated signalling transport. 69.125 Section... (CONTINUED) ACCESS CHARGES Computation of Charges § 69.125 Dedicated signalling transport. (a) Dedicated signalling transport shall consist of two elements, a signalling link charge and a signalling transfer point...

49 CFR 91.7 - Determination of compensatory charges.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 1 2010-10-01 2010-10-01 false Determination of compensatory charges. 91.7 Section 91.7 Transportation Office of the Secretary of Transportation INTERNATIONAL AIR TRANSPORTATION FAIR COMPETITIVE PRACTICES § 91.7 Determination of compensatory charges. (a) Upon indication by the...

47 CFR 69.125 - Dedicated signalling transport.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 47 Telecommunication 3 2012-10-01 2012-10-01 false Dedicated signalling transport. 69.125 Section... (CONTINUED) ACCESS CHARGES Computation of Charges § 69.125 Dedicated signalling transport. (a) Dedicated signalling transport shall consist of two elements, a signalling link charge and a signalling transfer point...

47 CFR 69.125 - Dedicated signalling transport.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 47 Telecommunication 3 2013-10-01 2013-10-01 false Dedicated signalling transport. 69.125 Section... (CONTINUED) ACCESS CHARGES Computation of Charges § 69.125 Dedicated signalling transport. (a) Dedicated signalling transport shall consist of two elements, a signalling link charge and a signalling transfer point...

A computational study of a novel graphene nanoribbon field effect transistor

NASA Astrophysics Data System (ADS)

Ghoreishi, Seyed Saleh; Yousefi, Reza

2017-04-01

In this paper, using gate structure engineering and modification of channel dopant profile, we propose a new double gate graphene nanoribbon field effect transistor (DG-GNRFET) mainly to suppress the band-to-band tunneling (BTBT) of carriers. In the new device, the intrinsic part of the channel is replaced by an intrinsic-lightly doped-intrinsic (I -N--I) configuration in a way that only the intrinsic parts are covered by the gate contact. Transport characteristics of the device are investigated theoretically using the nonequilibrium Green’s function (NEGF) formalism. Numerical simulations show that off-current, ambipolar behavior, on/off-current ratio and the switching characteristics such as intrinsic delay and power-delay product are improved. In addition, the new device demonstrates better sub-threshold swing and less drain-induced barrier lowering (DIBL).

Charge transport in organic semiconductors.

PubMed

Bässler, Heinz; Köhler, Anna

2012-01-01

Modern optoelectronic devices, such as light-emitting diodes, field-effect transistors and organic solar cells require well controlled motion of charges for their efficient operation. The understanding of the processes that determine charge transport is therefore of paramount importance for designing materials with improved structure-property relationships. Before discussing different regimes of charge transport in organic semiconductors, we present a brief introduction into the conceptual framework in which we interpret the relevant photophysical processes. That is, we compare a molecular picture of electronic excitations against the Su-Schrieffer-Heeger semiconductor band model. After a brief description of experimental techniques needed to measure charge mobilities, we then elaborate on the parameters controlling charge transport in technologically relevant materials. Thus, we consider the influences of electronic coupling between molecular units, disorder, polaronic effects and space charge. A particular focus is given to the recent progress made in understanding charge transport on short time scales and short length scales. The mechanism for charge injection is briefly addressed towards the end of this chapter.

A model and simulation of fast space charge pulses in polymers

NASA Astrophysics Data System (ADS)

Lv, Zepeng; Rowland, Simon M.; Wu, Kai

2017-11-01

The transport of space charge packets across polyethylene and epoxy resin in high electric fields has been characterized as fast or slow depending on packet mobility. Several explanations for the formation and transport of slow space charge packets have been proposed, but the origins of fast space charge pulses, with mobilities above 10-11 m2 V-1 s-1, are unclear. In one suggested model, it is assumed that the formation of fast charge pulses is due to discontinuous electromechanical compression and charge injection at the electrode-insulation interface, and their transport is related to corresponding relaxation processes. In that model, charges travel as a pulse because of group polarization. This paper provides an alternative model based on the reduction of charge carrier activation energy due to charge density triggered polymer chain movement and subsequent chain relaxation times. The generation and transport of fast charge pulses are readily simulated by a bipolar charge transport model with three additional parameters: reduced activation energy, charge density threshold, and chain relaxation time. Such a model is shown to reproduce key features of fast space charge pulses including speed, duration, repetition rate and pulse size. This model provides the basis for a deep understanding of the physical origins of fast space charge pulses in polymers.

Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Guochang; Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn; School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ

Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loadingmore » concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.« less

Methods for producing thin film charge selective transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

Inter-machine validation study of neoclassical transport modelling in medium- to high-density stellarator-heliotron plasmas

NASA Astrophysics Data System (ADS)

Dinklage, A.; Yokoyama, M.; Tanaka, K.; Velasco, J. L.; López-Bruna, D.; Beidler, C. D.; Satake, S.; Ascasíbar, E.; Arévalo, J.; Baldzuhn, J.; Feng, Y.; Gates, D.; Geiger, J.; Ida, K.; Isaev, M.; Jakubowski, M.; López-Fraguas, A.; Maaßberg, H.; Miyazawa, J.; Morisaki, T.; Murakami, S.; Pablant, N.; Kobayashi, S.; Seki, R.; Suzuki, C.; Suzuki, Y.; Turkin, Yu.; Wakasa, A.; Wolf, R.; Yamada, H.; Yoshinuma, M.; LHD Exp. Group; TJ-II Team; W7-AS Team

2013-06-01

A comparative study of energy transport for medium- to high-density discharges in the stellarator-heliotrons TJ-II, W7-AS and LHD is carried out. The specific discharge parameters are chosen to apply a recently concluded benchmarking study of neoclassical (NC) transport coefficients (Beidler et al 2011 Nucl. Fusion 51 076001) to perform this validation study. In contrast to previous experiments at low densities for which electron transport was predominant (Yokoyama et al 2007 Nucl. Fusion 47 1213), the current discharges also exhibit significant ion energy transport. As it affects the energy transport in 3D devices, the ambipolar radial electric field is addressed as well. For the discharges described, ion-root conditions, i.e. a small negative radial electric field were found. The energy transport in the peripheral region cannot be explained by NC theory. Within a ‘core region’(r/a < 1/2 ˜ 2/3), the predicted NC energy fluxes comply with experimental findings for W7-AS. For TJ-II, compliance in the core region is found for the particle transport and the electron energy transport. For the specific LHD discharges, the core energy transport complied with NC theory except for the electron energy transport in the inward-shifted magnetic configuration. The NC radial electric field tends to agree with experimental results for all devices but is measured to be more negative in the core of both LHD and TJ-II. As a general observation, the energy confinement time approaches the gyro-Bohm-type confinement scaling ISS04 (Yamada et al 2005 Nucl. Fusion 45 1684). This work is carried out within the International Stellarator-Heliotron Profile Database (www.ipp.mpg.de/ISS and http://ishpdb.nifs.ac.jp/index.html).

Surface charge accumulation of particles containing radionuclides in open air.

PubMed

Kim, Yong-Ha; Yiacoumi, Sotira; Tsouris, Costas

2015-05-01

Radioactivity can induce charge accumulation on radioactive particles. However, electrostatic interactions caused by radioactivity are typically neglected in transport modeling of radioactive plumes because it is assumed that ionizing radiation leads to charge neutralization. The assumption that electrostatic interactions caused by radioactivity are negligible is evaluated here by examining charge accumulation and neutralization on particles containing radionuclides in open air. A charge-balance model is employed to predict charge accumulation on radioactive particles. It is shown that particles containing short-lived radionuclides can be charged with multiple elementary charges through radioactive decay. The presence of radioactive particles can significantly modify the particle charge distribution in open air and yield an asymmetric bimodal charge distribution, suggesting that strong electrostatic particle interactions may occur during short- and long-range transport of radioactive particles. Possible effects of transported radioactive particles on electrical properties of the local atmosphere are reported. The study offers insight into transport characteristics of airborne radionuclides. Results are useful in atmospheric transport modeling of radioactive plumes. Copyright © 2015 Elsevier Ltd. All rights reserved.

19 CFR 351.515 - Internal transport and freight charges for export shipments.

Code of Federal Regulations, 2010 CFR

2010-04-01

... shipments. 351.515 Section 351.515 Customs Duties INTERNATIONAL TRADE ADMINISTRATION, DEPARTMENT OF COMMERCE... Internal transport and freight charges for export shipments. (a) Benefit—(1) In general. In the case of internal transport and freight charges on export shipments, a benefit exists to the extent that the charges...

Charge injection and transport properties of an organic light-emitting diode

PubMed Central

Juhasz, Peter; Nevrela, Juraj; Micjan, Michal; Novota, Miroslav; Uhrik, Jan; Stuchlikova, Lubica; Jakabovic, Jan; Harmatha, Ladislav

2016-01-01

Summary The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good agreement of activation energies obtained by steady-state and frequency-domain was used to analyze their contributions to the charge injection and transport. We concluded that charge is injected into the OLED device mostly through the interfacial states at low voltage region, whereas the thermionic injection dominates in the high voltage region. This comparison of experimental techniques demonstrates their capabilities of identification of major bottleneck of charge injection and transport. PMID:26925351

Predictive study of charge transport in disordered semiconducting polymers.

PubMed

Athanasopoulos, Stavros; Kirkpatrick, James; Martínez, Diego; Frost, Jarvist M; Foden, Clare M; Walker, Alison B; Nelson, Jenny

2007-06-01

We present a theoretical study of charge transport in disordered semiconducting polymers that relates the charge mobility to the chemical structure and the physical morphology in a novel multiscale approach. Our studies, focusing on poly(9,9-dioctylfluorene) (PFO), show that the charge mobility is dominated by pathways with the highest interchain charge-transfer rates. We also find that disorder is not always detrimental to charge transport. We find good agreement with experimental time-of-flight mobility data in highly aligned PFO films.

Multilevel Investigation of Charge Transport in Conjugated Polymers.

PubMed

Dong, Huanli; Hu, Wenping

2016-11-15

Conjugated polymers have attracted the world's attentions since their discovery due to their great promise for optoelectronic devices. However, the fundamental understanding of charge transport in conjugated polymers remains far from clear. The origin of this challenge is the natural disorder of polymers with complex molecular structures in the solid state. Moreover, an effective way to examine the intrinsic properties of conjugated polymers is absent. Optoelectronic devices are always based on spin-coated films. In films, polymers tend to form highly disordered structures at nanometer to micrometer length scales due to the high degree of conformational freedom of macromolecular chains and the irregular interchain entanglement, thus typically resulting in much lower charge transport properties than their intrinsic performance. Furthermore, a subtle change of processing conditions may dramatically affect the film formation-inducing large variations in the morphology, crystallinity, microstructure, molecular packing, and alignment, and finally varying the effective charge transport significantly and leading to great inconsistency over an order of magnitude even for devices based on the same polymer semiconductor. Meanwhile, the charge transport mechanism in conjugated polymers is still unclear and its investigation is challenging based on such complex microstructures of polymers in films. Therefore, how to objectively evaluate the charge transport and probe the charge transport mechanism of conjugated polymers has confronted the world for decades. In this Account, we present our recent progress on multilevel charge transport in conjugated polymers, from disordered films, uniaxially aligned thin films, and single crystalline micro- or nanowires to molecular scale, where a derivative of poly(para-phenylene ethynylene) with thioacetyl end groups (TA-PPE) is selected as the candidate for investigation, which could also be extended to other conjugated polymer systems. Our systematic investigations demonstrated that 3-4 orders higher charge transport properties could be achieved with the improvement of polymer chain order and confirmed efficient charge transport along the conjugated polymer backbones. Moreover, with downscaling to molecular scale, many novel phenomena were observed such as the largely quantized electronic structure for an 18 nm-long TA-PPE and the modulation of the redox center of tetrathiafulvalene (TTF) units on tunneling charge transport, which opens the door for conjugated polymers used in nanometer quantum devices. We hope the understanding of charge transport in PPE and its related conjugated polymer at multilevel scale in this Account will provide a new method to sketch the charge transport properties of conjugated polymers, and new insights into the combination of more conjugated polymer materials in the multilevel optoelectronic and other related functional devices, which will offer great promise for the next generation of electronic devices.

Efficient Long-Range Hole Transport Through G-Quadruplexes.

PubMed

Wu, Jingyuan; Meng, Zhenyu; Lu, Yunpeng; Shao, Fangwei

2017-10-09

DNA offers a means of long-range charge transport for biology and electric nanodevices. Here, a series of tetra-stranded G-quadruplexes were assembled within a dendritic DNA architecture to explore oxidative charge transport (hole transport) through the G-quadruplex. Efficient charge transport was achieved over 28 Å upon UV irradiation. Over a longer G-quadruplex bridge, hole transport was escalated to a higher efficiency, which resulted in a higher yield than that of the optimal duplex DNA for charge transport, that is, the adenine tract. Efficient long-range hole transport suggests tetra-stranded G-quadruplexes, instead of an oxidation hotspot, hold better potential as an electron conduit than duplex DNA. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors.

PubMed

Baek, Seung Woon; Ha, Jong-Woon; Yoon, Minho; Hwang, Do-Hoon; Lee, Jiyoul

2018-06-06

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting copolymer-based OFETs, and the use of shellac as a dielectric layer facilitates electron transport at the interface with D-A-type copolymer channels.

Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

NASA Astrophysics Data System (ADS)

Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

2017-02-01

Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units

USGS Publications Warehouse

Pearson, Christopher; Bowen, Leon; Lee, Myung Won; Fisher, Alison L.; Linton, Katherine E.; Bryce, Martin R.; Petty, Michael C.

2013-01-01

We report on the mechanism of operation of organic thin film resistive memory architectures based on an ambipolar compound consisting of oxadiazole, carbazole, and fluorene units. Cross-sections of the devices have been imaged by electron microscopy both before and after applying a voltage. The micrographs reveal the growth of filaments, with diameters of 50 nm–100 nm, on the metal cathode. We suggest that these are formed by the drift of aluminium ions from the anode and are responsible for the observed switching and negative differential resistance phenomena in the memory devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sainato, Michela; Shevitski, Brian; Sahu, Ayaskanta

Self-assembly of semiconductor nanocrystals (NCs) into two-dimensional patterns or three-dimensional (2- 3D) superstructures has emerged as a promising low-cost route to generate thin-film transistors and solar cells with superior charge transport because of enhanced electronic coupling between the NCs. Here, we show that lead sulfide (PbS) NCs solids featuring either short-range (disordered glassy solids, GSs) or long-range (superlattices, SLs) packing order are obtained solely by controlling deposition conditions of colloidal solution of NCs. In this study, we demonstrate the use of the evaporation-driven self-assembly method results in PbS NC SL structures that are observed over an area of 1 mmmore » × 100 μm, with long-range translational order of up to 100 nm. A number of ordered domains appear to have nucleated simultaneously and grown together over the whole area, imparting a polycrystalline texture to the 3D SL films. By contrast, a conventional, optimized spin-coating deposition method results in PbS NC glassy films with no translational symmetry and much shorter-range packing order in agreement with state-of-the-art reports. Further, we investigate the electronic properties of both SL and GS films, using a field-effect transistor configuration as a test platform. The long-range ordering of the PbS NCs into SLs leads to semiconducting NC-based solids, the mobility (μ) of which is 3 orders of magnitude higher than that of the disordered GSs. Furthemore, although spin-cast GSs of PbS NCs have weak ambipolar behavior with limited gate tunability, SLs of PbS NCs show a clear p-type behavior with significantly higher conductivities.« less

Surface transport processes in charged porous media

DOE PAGES

Gabitto, Jorge; Tsouris, Costas

2017-03-03

Surface transport processes are important in chemistry, colloidal sciences, engineering, biology, and geophysics. Natural or externally produced charges on surfaces create electrical double layers (EDLs) at the solid-liquid interface. The existence of the EDLs produces several complex processes including bulk and surface transport of ions. In this work, a model is presented to simulate bulk and transport processes in homogeneous porous media comprising big pores. It is based on a theory for capacitive charging by ideally polarizable porous electrodes without Faradaic reactions or specific adsorption of ions. A volume averaging technique is used to derive the averaged transport equations inmore » the limit of thin electrical double layers. Description of the EDL between the electrolyte solution and the charged wall is accomplished using the Gouy-Chapman-Stern (GCS) model. The surface transport terms enter into the average equations due to the use of boundary conditions for diffuse interfaces. Two extra surface transports terms appear in the closed average equations. One is a surface diffusion term equivalent to the transport process in non-charged porous media. The second surface transport term is a migration term unique to charged porous media. The effective bulk and transport parameters for isotropic porous media are calculated solving the corresponding closure problems.« less

Surface transport processes in charged porous media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gabitto, Jorge; Tsouris, Costas

Surface transport processes are important in chemistry, colloidal sciences, engineering, biology, and geophysics. Natural or externally produced charges on surfaces create electrical double layers (EDLs) at the solid-liquid interface. The existence of the EDLs produces several complex processes including bulk and surface transport of ions. In this work, a model is presented to simulate bulk and transport processes in homogeneous porous media comprising big pores. It is based on a theory for capacitive charging by ideally polarizable porous electrodes without Faradaic reactions or specific adsorption of ions. A volume averaging technique is used to derive the averaged transport equations inmore » the limit of thin electrical double layers. Description of the EDL between the electrolyte solution and the charged wall is accomplished using the Gouy-Chapman-Stern (GCS) model. The surface transport terms enter into the average equations due to the use of boundary conditions for diffuse interfaces. Two extra surface transports terms appear in the closed average equations. One is a surface diffusion term equivalent to the transport process in non-charged porous media. The second surface transport term is a migration term unique to charged porous media. The effective bulk and transport parameters for isotropic porous media are calculated solving the corresponding closure problems.« less

Metal oxide charge transport material doped with organic molecules

DOEpatents

Forrest, Stephen R.; Lassiter, Brian E.

2016-08-30

Doping metal oxide charge transport material with an organic molecule lowers electrical resistance while maintaining transparency and thus is optimal for use as charge transport materials in various organic optoelectronic devices such as organic photovoltaic devices and organic light emitting devices.

Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

PubMed

Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

2017-01-25

We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration.

PubMed

Meric, Zeynep; Mehringer, Christian; Karpstein, Nicolas; Jank, Michael P M; Peukert, Wolfgang; Frey, Lothar

2015-09-14

In this work we demonstrate the fabrication of germanium nanoparticle (NP) based electronics. The whole process chain from the nanoparticle production up to the point of inverter integration is covered. Ge NPs with a mean diameter of 33 nm and a geometric standard deviation of 1.19 are synthesized in the gas phase by thermal decomposition of GeH4 precursor in a seeded growth process. Dispersions of these particles in ethanol are employed to fabricate thin particulate films (60 to 120 nm in thickness) on substrates with a pre-patterned interdigitated aluminum electrode structure. The effect of temperature treatment, polymethyl methacrylate encapsulation and alumina coating by plasma-assisted atomic layer deposition (employing various temperatures) on the performance of these layers as thin film transistors (TFTs) is investigated. This coating combined with thermal annealing delivers ambipolar TFTs which show an Ion/Ioff ratio in the range of 10(2). We report fabrication of n-type, p-type or ambipolar Ge NP TFTs at maximum temperatures of 450 °C. For the first time, a circuit using two ambipolar TFTs is demonstrated to function as a NOT gate with an inverter gain of up to 4 which can be operated at room temperature in ambient air.

On electron heating in a low pressure capacitively coupled oxygen discharge

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Snorrason, D. I.

2017-11-01

We use the one-dimensional object-oriented particle-in-cell Monte Carlo collision code oopd1 to explore the charged particle densities, the electronegativity, the electron energy probability function, and the electron heating mechanism in a single frequency capacitively coupled oxygen discharge, when the applied voltage amplitude is varied. We explore discharges operated at 10 mTorr, where electron heating within the plasma bulk (the electronegative core) dominates, and at 50 mTorr, where sheath heating dominates. At 10 mTorr, the discharge is operated in a combined drift-ambipolar and α-mode, and at 50 mTorr, it is operated in the pure α-mode. At 10 mTorr, the effective electron temperature is high and increases with increased driving voltage amplitude, while at 50 mTorr, the effective electron temperature is much lower, in particular, within the electronegative core, where it is roughly 0.2-0.3 eV, and varies only a little with the voltage amplitude.

Two-dimensional analytical model for dual-material control-gate tunnel FETs

NASA Astrophysics Data System (ADS)

Xu, Hui Fang; Dai, Yue Hua; Gui Guan, Bang; Zhang, Yong Feng

2016-09-01

An analytical model for a dual-material control-gate (DMCG) tunnel field effect transistor (TFET) is presented for the first time in this paper, and the influence of the mobile charges on the potential profile is taken into account. On the basis of the potential profile, the lateral electric field is derived and the expression for the drain current is obtained by integrating the band-to-band tunneling (BTBT) generation rate applicable to low-bandgap and high-bandgap materials over the tunneling region. The model also predicts the impacts of the control-gate work function on the potential and drain current. The advantage of this work is that it not only offers physical insight into device physics but also provides the basic designing guideline for DMCG TFETs, enabling the designer to optimize the device in terms of the on-state current, the on-off current ratio, and suppressed ambipolar behavior. Very good agreements for both the potential and drain current are observed between the model calculations and the simulated results.

Application of closed-form solutions to a mesh point field in silicon solar cells

NASA Technical Reports Server (NTRS)

Lamorte, M. F.

1985-01-01

A computer simulation method is discussed that provides for equivalent simulation accuracy, but that exhibits significantly lower CPU running time per bias point compared to other techniques. This new method is applied to a mesh point field as is customary in numerical integration (NI) techniques. The assumption of a linear approximation for the dependent variable, which is typically used in the finite difference and finite element NI methods, is not required. Instead, the set of device transport equations is applied to, and the closed-form solutions obtained for, each mesh point. The mesh point field is generated so that the coefficients in the set of transport equations exhibit small changes between adjacent mesh points. Application of this method to high-efficiency silicon solar cells is described; and the method by which Auger recombination, ambipolar considerations, built-in and induced electric fields, bandgap narrowing, carrier confinement, and carrier diffusivities are treated. Bandgap narrowing has been investigated using Fermi-Dirac statistics, and these results show that bandgap narrowing is more pronounced and that it is temperature-dependent in contrast to the results based on Boltzmann statistics.

Radial Distribution Functions of Strongly Coupled Two-Temperature Plasmas

NASA Astrophysics Data System (ADS)

Shaffer, Nathaniel R.; Tiwari, Sanat Kumar; Baalrud, Scott D.

2017-10-01

We present tests of three theoretical models for the radial distribution functions (RDFs) in two-temperature strongly coupled plasmas. RDFs are useful in extending plasma thermodynamics and kinetic theory to strong coupling, but they are usually known only for thermal equilibrium or for approximate one-component model plasmas. Accurate two-component modeling is necessary to understand the impact of strong coupling on inter-species transport, e.g., ambipolar diffusion and electron-ion temperature relaxation. We demonstrate that the Seuferling-Vogel-Toeppfer (SVT) extension of the hypernetted chain equations not only gives accurate RDFs (as compared with classical molecular dynamics simulations), but also has a simple connection with the Yukawa OCP model. This connection gives a practical means to recover the structure of the electron background from knowledge of the ion-ion RDF alone. Using the model RDFs in Effective Potential Theory, we report the first predictions of inter-species transport coefficients of strongly coupled plasmas far from equilibrium. This work is supported by NSF Grant No. PHY-1453736, AFSOR Award No. FA9550-16-1-0221, and used XSEDE computational resources.

Ambipolar ion acceleration in an expanding magnetic nozzle

NASA Astrophysics Data System (ADS)

Longmier, Benjamin W.; Bering, Edgar A., III; Carter, Mark D.; Cassady, Leonard D.; Chancery, William J.; Díaz, Franklin R. Chang; Glover, Tim W.; Hershkowitz, Noah; Ilin, Andrew V.; McCaskill, Greg E.; Olsen, Chris S.; Squire, Jared P.

2011-02-01

The helicon plasma stage in the Variable Specific Impulse Magnetoplasma Rocket (VASIMR®) VX-200i device was used to characterize an axial plasma potential profile within an expanding magnetic nozzle region of the laboratory based device. The ion acceleration mechanism is identified as an ambipolar electric field produced by an electron pressure gradient, resulting in a local axial ion speed of Mach 4 downstream of the magnetic nozzle. A 20 eV argon ion kinetic energy was measured in the helicon source, which had a peak magnetic field strength of 0.17 T. The helicon plasma source was operated with 25 mg s-1 argon propellant and 30 kW of RF power. The maximum measured values of plasma density and electron temperature within the exhaust plume were 1 × 1020 m-3 and 9 eV, respectively. The measured plasma density is nearly an order of magnitude larger than previously reported steady-state helicon plasma sources. The exhaust plume also exhibits a 95% to 100% ionization fraction. The size scale and spatial location of the plasma potential structure in the expanding magnetic nozzle region appear to follow the size scale and spatial location of the expanding magnetic field. The thickness of the potential structure was found to be 104 to 105 λDe depending on the local electron temperature in the magnetic nozzle, many orders of magnitude larger than typical laboratory double layer structures. The background plasma density and neutral argon pressure were 1015 m-3 and 2 × 10-5 Torr, respectively, in a 150 m3 vacuum chamber during operation of the helicon plasma source. The agreement between the measured plasma potential and plasma potential that was calculated from an ambipolar ion acceleration analysis over the bulk of the axial distance where the potential drop was located is a strong confirmation of the ambipolar acceleration process.

Spatio-temporal analysis of the electron power absorption in electropositive capacitive RF plasmas based on moments of the Boltzmann equation

NASA Astrophysics Data System (ADS)

Schulze, J.; Donkó, Z.; Lafleur, T.; Wilczek, S.; Brinkmann, R. P.

2018-05-01

Power absorption by electrons from the space- and time-dependent electric field represents the basic sustaining mechanism of all radio-frequency driven plasmas. This complex phenomenon has attracted significant attention. However, most theories and models are, so far, only able to account for part of the relevant mechanisms. The aim of this work is to present an in-depth analysis of the power absorption by electrons, via the use of a moment analysis of the Boltzmann equation without any ad-hoc assumptions. This analysis, for which the input quantities are taken from kinetic, particle based simulations, allows the identification of all physical mechanisms involved and an accurate quantification of their contributions. The perfect agreement between the sum of these contributions and the simulation results verifies the completeness of the model. We study the relative importance of these mechanisms as a function of pressure, with high spatial and temporal resolution, in an electropositive argon discharge. In contrast to some widely accepted previous models we find that high space- and time-dependent ambipolar electric fields outside the sheaths play a key role for electron power absorption. This ambipolar field is time-dependent within the RF period and temporally asymmetric, i.e., the sheath expansion is not a ‘mirror image’ of the sheath collapse. We demonstrate that this time-dependence is mainly caused by a time modulation of the electron temperature resulting from the energy transfer to electrons by the ambipolar field itself during sheath expansion. We provide a theoretical proof that this ambipolar electron power absorption would vanish completely, if the electron temperature was constant in time. This mechanism of electron power absorption is based on a time modulated electron temperature, markedly different from the Hard Wall Model, of key importance for energy transfer to electrons on time average and, thus, essential for the generation of capacitively coupled plasmas.

A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Microscopic Approach

NASA Technical Reports Server (NTRS)

Li, Jianzhong; Ning, C. Z.; Biegel, Bryan A. (Technical Monitor)

2001-01-01

Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field.

31 CFR 337.2 - Transportation charges and risks.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 31 Money and Finance: Treasury 2 2014-07-01 2014-07-01 false Transportation charges and risks. 337.2 Section 337.2 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued... GOVERNING FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges...

Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation

NASA Astrophysics Data System (ADS)

Graef, Michael; Hosenfeld, Fabian; Horst, Fabian; Farokhnejad, Atieh; Hain, Franziska; Iñíguez, Benjamín; Kloes, Alexander

2018-03-01

The Tunnel-FET is one of the most promising devices to be the successor of the standard MOSFET due to its alternative current transport mechanism, which allows a smaller subthreshold slope than the physically limited 60 mV/dec of the MOSFET. Recently fabricated devices show smaller slopes already but mostly not over multiple decades of the current transfer characteristics. In this paper the performance limiting effects, occurring during the fabrication process of the device, such as doping profiles and midgap traps are analyzed by physics-based analytical models and their performance limiting abilities are determined. Additionally, performance enhancing possibilities, such as hetero-structures and ambipolarity improvements are introduced and discussed. An extensive double-gate n-Tunnel-FET model is presented, which meets the versatile device requirements and shows a good fit with TCAD simulations and measurement data.

Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics

DOE PAGES

Subbiah, Anand S.; Mahuli, Neha; Agarwal, Sumanshu; ...

2017-07-21

Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge-transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge-transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all-inorganic transport layers in a planar p-i-n junction device configuration using formamidinium lead tribromide (FAPbBr 3) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputteredmore » zinc oxide as hole- and electron-transport materials, respectively. Using only inorganic charge-transport layers resulted in planar FAPbBr 3 devices with a power conversion efficiency of 6.75% at an open-circuit voltage of 1.23 V. In conclusion, the transition of planar FAPbBr 3 devices making from all-organic towards all-inorganic charge-transport layers is studied in detail.« less

Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subbiah, Anand S.; Mahuli, Neha; Agarwal, Sumanshu

Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge-transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge-transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all-inorganic transport layers in a planar p-i-n junction device configuration using formamidinium lead tribromide (FAPbBr 3) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputteredmore » zinc oxide as hole- and electron-transport materials, respectively. Using only inorganic charge-transport layers resulted in planar FAPbBr 3 devices with a power conversion efficiency of 6.75% at an open-circuit voltage of 1.23 V. In conclusion, the transition of planar FAPbBr 3 devices making from all-organic towards all-inorganic charge-transport layers is studied in detail.« less

31 CFR 337.2 - Transportation charges and risks.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 31 Money and Finance:Treasury 2 2013-07-01 2013-07-01 false Transportation charges and risks. 337.2 Section 337.2 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued... FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges and risks...

31 CFR 337.2 - Transportation charges and risks.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 31 Money and Finance:Treasury 2 2011-07-01 2011-07-01 false Transportation charges and risks. 337.2 Section 337.2 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued... FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges and risks...

31 CFR 337.2 - Transportation charges and risks.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 31 Money and Finance:Treasury 2 2012-07-01 2012-07-01 false Transportation charges and risks. 337.2 Section 337.2 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued... FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges and risks...

Direct numerical simulation of leaky dielectrics with application to electrohydrodynamic atomization

NASA Astrophysics Data System (ADS)

Owkes, Mark; Desjardins, Olivier

2013-11-01

Electrohydrodynamics (EHD) have the potential to greatly enhance liquid break-up, as demonstrated in numerical simulations by Van Poppel et al. (JCP (229) 2010). In liquid-gas EHD flows, the ratio of charge mobility to charge convection timescales can be used to determine whether the charge can be assumed to exist in the bulk of the liquid or at the surface only. However, for EHD-aided fuel injection applications, these timescales are of similar magnitude and charge mobility within the fluid might need to be accounted for explicitly. In this work, a computational approach for simulating two-phase EHD flows including the charge transport equation is presented. Under certain assumptions compatible with a leaky dielectric model, charge transport simplifies to a scalar transport equation that is only defined in the liquid phase, where electric charges are present. To ensure consistency with interfacial transport, the charge equation is solved using a semi-Lagrangian geometric transport approach, similar to the method proposed by Le Chenadec and Pitsch (JCP (233) 2013). This methodology is then applied to EHD atomization of a liquid kerosene jet, and compared to results produced under the assumption of a bulk volumetric charge.

31 CFR 337.2 - Transportation charges and risks.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 31 Money and Finance: Treasury 2 2010-07-01 2010-07-01 false Transportation charges and risks. 337... FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges and risks... to book-entry form, must be delivered at the expense and risk of the holder. Debentures bearing...

Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

PubMed Central

Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

2017-01-01

Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design. PMID:28145438

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

NASA Astrophysics Data System (ADS)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on six different bilayer dielectrics consisting of various spin-coated polymers/HMDS on 300 nm SiO2/p+-Si, followed by transistor fabrication. In case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters while film morphologies and microstructures remain unchanged. In contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by dielectric surface modifications. The origin of the mobility sensitivity to the various surface chemistries in the case of air sensitive n-type semiconductors is found to be due to electron trapping by silanol and carbonyl functionalities at the semiconductor-dielectric interface.

Breaking the barriers of all-polymer solar cells: Solving electron transporter and morphology problems

NASA Astrophysics Data System (ADS)

Gavvalapalli, Nagarjuna

All-polymer solar cells (APSC) are a class of organic solar cells in which hole and electron transporting phases are made of conjugated polymers. Unlike polymer/fullerene solar cell, photoactive material of APSC can be designed to have hole and electron transporting polymers with complementary absorption range and proper frontier energy level offset. However, the highest reported PCE of APSC is 5 times less than that of polymer/fullerene solar cell. The low PCE of APSC is mainly due to: i) low charge separation efficiency; and ii) lack of optimal morphology to facilitate charge transfer and transport; and iii) lack of control over the exciton and charge transport in each phase. My research work is focused towards addressing these issues. The charge separation efficiency of APSC can be enhanced by designing novel electron transporting polymers with: i) broad absorption range; ii) high electron mobility; and iii) high dielectric constant. In addition to with the above parameters chemical and electronic structure of the repeating unit of conjugated polymer also plays a role in charge separation efficiency. So far only three classes of electron transporting polymers, CN substituted PPV, 2,1,3-benzothiadiazole derived polymers and rylene diimide derived polymers, are used in APSC. Thus to enhance the charge separation efficiency new classes of electron transporting polymers with the above characteristics need to be synthesized. I have developed a new straightforward synthetic strategy to rapidly generate new classes of electron transporting polymers with different chemical and electronic structure, broad absorption range, and high electron mobility from readily available electron deficient monomers. In APSCs due to low entropy of mixing, polymers tend to micro-phase segregate rather than forming the more useful nano-phase segregation. Optimizing the polymer blend morphology to obtain nano-phase segregation is specific to the system under study, time consuming, and not trivial. Thus to avoid micro-phase segregation, nanoparticles of hole and electron transporters are synthesized and blended. But the PCE of nanoparticle blends are far less than those of polymer blends. This is mainly due to the: i) lack of optimal assembly of nanoparticles to facilitate charge transfer and transport processes; and ii) lack of control over the exciton and charge transport properties within the nanoparticles. Polymer packing within the nanoparticle controls the optoelectronic and charge transport properties of the nanoparticle. In this work I have shown that the solvent used to synthesize nanoparticles plays a crucial role in determining the assembly of polymer chains inside the nanoparticle there by affecting its exciton and charge transport processes. To obtain the optimal morphology for better charge transfer and transport, we have also synthesized nanoparticles of different radius with surfactants of opposite charge. We propose that depending on the radius and/or Coulombic interactions these nanoparticles can be assembled into mineral structure-types that are useful for photovoltaic devices.

Charge transport mechanism in lead oxide revealed by CELIV technique

PubMed Central

Semeniuk, O.; Juska, G.; Oelerich, J.-O.; Wiemer, M.; Baranovskii, S. D.; Reznik, A.

2016-01-01

Although polycrystalline lead oxide (PbO) belongs to the most promising photoconductors for optoelectronic and large area detectors applications, the charge transport mechanism in this material still remains unclear. Combining the conventional time-of-flight and the photo-generated charge extraction by linear increasing voltage (photo-CELIV) techniques, we investigate the transport of holes which are shown to be the faster carriers in poly-PbO. Experimentally measured temperature and electric field dependences of the hole mobility suggest a highly dispersive transport. In order to analyze the transport features quantitatively, the theory of the photo-CELIV is extended to account for the dispersive nature of charge transport. While in other materials with dispersive transport the amount of dispersion usually depends on temperature, this is not the case in poly-PbO, which evidences that dispersive transport is caused by the spatial inhomogeneity of the material and not by the energy disorder. PMID:27628537

Tuning transport selectivity of ionic species by phosphoric acid gradient in positively charged nanochannel membranes.

PubMed

Yang, Meng; Yang, Xiaohai; Wang, Kemin; Wang, Qing; Fan, Xin; Liu, Wei; Liu, Xizhen; Liu, Jianbo; Huang, Jin

2015-02-03

The transport of ionic species through a nanochannel plays important roles in fundamental research and practical applications of the nanofluidic device. Here, we demonstrated that ionic transport selectivity of a positively charged nanochannel membrane can be tuned under a phosphoric acid gradient. When phosphoric acid solution and analyte solution were connected by the positively charged nanochannel membrane, the faster-moving analyte through the positively charged nanochannel membrane was the positively charged dye (methylviologen, MV(2+)) instead of the negatively charged dye (1,5-naphthalene disulfonate, NDS(2-)). In other words, a reversed ion selectivity of the nanochannel membranes can be found. It can be explained as a result of the combination of diffusion, induced electroosmosis, and induced electrophoresis. In addition, the influencing factors of transport selectivity, including concentration of phosphoric acid, penetration time, and volume of feed solution, were also investigated. The results showed that the transport selectivity can further be tuned by adjusting these factors. As a method of tuning ionic transport selectivity by establishing phosphoric acid gradient, it will be conducive to improving the separation of ionic species.

Approaching Intra- and Interchain Charge Transport of Conjugated Polymers Facilely by Topochemical Polymerized Single Crystals.

PubMed

Yao, Yifan; Dong, Huanli; Liu, Feng; Russell, Thomas P; Hu, Wenping

2017-08-01

Charge transport of small molecules is measured well with scanning tunneling microscopy, conducting atomic force microscopy, break junction, nanopore, and covalently bridging gaps. However, the manipulation and measurement of polymer chains remain a long-standing fundamental issue in conjugated polymers and full of challenge since conjugated polymers are naturally disordered materials. Here, a fundamental breakthrough in generating high-quality conjugated-polymer nanocrystals with extended conjugation and exceptionally high degrees of order using a surface-supported topochemical polymerization method is demonstrated. In the crystal the conjugated-polymer chains are extended along the long axis of the crystal with the side chains perpendicular to the long axis. Devices with conducting channels along the polymer chains show efficient charge transport, nearly two orders of magnitude greater than the interchain charge transport along the π-π stacking direction. This is the first example to clarify intra- and interchain charge transport based on an individual single crystal of conjugated polymers, and demonstrate the importance of intrachain charge transport in plastic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transport of Cryptosporidium parvum Oocysts in Charge Heterogeneous Porous Media: Microfluidics Experiment and Numerical Simulation

NASA Astrophysics Data System (ADS)

Liu, Y.; Meng, X.; Guo, Z.; Zhang, C.; Nguyen, T. H.; Hu, D.; Ji, J.; Yang, X.

2017-12-01

Colloidal attachment on charge heterogeneous grains has significant environmental implications for transport of hazardous colloids, such as pathogens, in the aquifer, where iron, manganese, and aluminium oxide minerals are the major source of surface charge heterogeneity of the aquifer grains. A patchwise surface charge model is often used to describe the surface charge heterogeneity of the grains. In the patchwise model, the colloidal attachment efficiency is linearly correlated with the fraction of the favorable patches (θ=λ(θf - θu)+θu). However, our previous microfluidic study showed that the attachment efficiency of oocysts of Cryptosporidium parvum, a waterborne protozoan parasite, was not linear correlated with the fraction of the favorable patches (λ). In this study, we developed a pore scale model to simulate colloidal transport and attachment on charge heterogeneous grains. The flow field was simulated using the LBM method and colloidal transport and attachment were simulated using the Lagrange particle tracking method. The pore scale model was calibrated with experimental results of colloidal and oocyst transport in microfluidic devices and was then used to simulate oocyst transport in charge heterogeneous porous media under a variety of environmental relative conditions, i.e. the fraction of favorable patchwise, ionic strength, and pH. The results of the pore scale simulations were used to evaluate the effect of surface charge heterogeneity on upscaling of oocyst transport from pore to continuum scale and to develop an applicable correlation between colloidal attachment efficiency and the fraction of the favorable patches.

Scientific Computation Application Partnerships in Materials and Chemical Sciences, Charge Transfer and Charge Transport in Photoactivated Systems, Developing Electron-Correlated Methods for Excited State Structure and Dynamics in the NWChem Software Suite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cramer, Christopher J.

Charge transfer and charge transport in photoactivated systems are fundamental processes that underlie solar energy capture, solar energy conversion, and photoactivated catalysis, both organometallic and enzymatic. We developed methods, algorithms, and software tools needed for reliable treatment of the underlying physics for charge transfer and charge transport, an undertaking with broad applicability to the goals of the fundamental-interaction component of the Department of Energy Office of Basic Energy Sciences and the exascale initiative of the Office of Advanced Scientific Computing Research.

Characteristics of Ions Emission from Ultrashort Laser Produced Plasma

PubMed Central

Elsied, Ahmed M.; Termini, Nicholas C.; Diwakar, Prasoon K.; Hassanein, Ahmed

2016-01-01

The dynamic characteristics of the ions emitted from ultrashort laser interaction with materials were studied. A series of successive experiments were conducted for six different elements (C, Al, Cu, Mo, Gd, and W) using 40 fs, 800 nm Ti: Sapphire laser. Time-of-flight (TOF) ion profile was analyzed and charge emission dependencies were investigated. The effects of incident laser interaction with each element were studied over a wide range of laser fluences (0.8 J/cm2 to 24 J/cm2) corresponding to laser intensities (2.0 × 1013 W/cm2 to 6.0 × 1014 W/cm2). The dependencies of the angular resolved ion flux and energy were also investigated. The TOF ion profile exhibits two peaks corresponding to a fast and a slow ion regime. The slow ions emission was the result of thermal vaporization while fast ions emission was due to time dependent ambipolar electric field. A theoretical model is proposed to predict the total ion flux emitted during femtosecond laser interaction that depends on laser parameters, material properties, and plume hydrodynamics. Incident laser fluence directly impacts average charge state and in turn affects the ion flux. Slow ions velocity exhibited different behavior from fast ions velocity. The fast ions energy and flux were found to be more collimated. PMID:27905553

The Effect of Voltage Charging on the Transport Properties of Gold Nanotube Membranes.

PubMed

Experton, Juliette; Martin, Charles R

2018-05-01

Porous membranes are used in chemical separations and in many electrochemical processes and devices. Research on the transport properties of a unique class of porous membranes that contain monodisperse gold nanotubes traversing the entire membrane thickness is reviewed here. These gold nanotubes can act as conduits for ionic and molecular transports through the membrane. Because the tubes are electronically conductive, they can be electrochemically charged by applying a voltage to the membrane. How this "voltage charging" affects the transport properties of gold nanotube membranes is the subject of this Review. Experiments showing that voltage charging can be used to reversibly switch the membrane between ideally cation- and anion-transporting states are reviewed. Voltage charging can also be used to enhance the ionic conductivity of gold nanotube membranes. Finally, voltage charging to accomplish electroporation of living bacteria as they pass through gold nanotube membranes is reviewed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Impact of Tortuosity on Charge-Carrier Transport in Organic Bulk Heterojunction Blends

NASA Astrophysics Data System (ADS)

Heiber, Michael C.; Kister, Klaus; Baumann, Andreas; Dyakonov, Vladimir; Deibel, Carsten; Nguyen, Thuc-Quyen

2017-11-01

The impact of the tortuosity of the charge-transport pathways through a bulk heterojunction film on the charge-carrier mobility is theoretically investigated using model morphologies and kinetic Monte Carlo simulations. The tortuosity descriptor provides a quantitative metric to characterize the quality of the charge-transport pathways, and model morphologies with controlled domain size and tortuosity are created using an anisotropic domain growth procedure. The tortuosity is found to be dependent on the anisotropy of the domain structure and is highly tunable. Time-of-flight charge-transport simulations on morphologies with a range of tortuosity values reveal that tortuosity can significantly reduce the magnitude of the mobility and the electric-field dependence relative to a neat material. These reductions are found to be further controlled by the energetic disorder and temperature. Most significantly, the sensitivity of the electric-field dependence to the tortuosity can explain the different experimental relationships previously reported, and exploiting this sensitivity could lead to simpler methods for characterizing and optimizing charge transport in organic solar cells.

Lateral charge transport from heavy-ion tracks in integrated circuit chips

NASA Technical Reports Server (NTRS)

Zoutendyk, J. A.; Schwartz, H. R.; Nevill, L. R.

1988-01-01

A 256K DRAM has been used to study the lateral transport of charge (electron-hole pairs) induced by direct ionization from heavy-ion tracks in an IC. The qualitative charge transport has been simulated using a two-dimensional numerical code in cylindrical coordinates. The experimental bit-map data clearly show the manifestation of lateral charge transport in the creation of adjacent multiple-bit errors from a single heavy-ion track. The heavy-ion data further demonstrate the occurrence of multiple-bit errors from single ion tracks with sufficient stopping power. The qualitative numerical simulation results suggest that electric-field-funnel-aided (drift) collection accounts for single error generated by an ion passing through a charge-collecting junction, while multiple errors from a single ion track are due to lateral diffusion of ion-generated charge.

47 CFR 69.108 - Transport rate benchmark.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 3 2010-10-01 2010-10-01 false Transport rate benchmark. 69.108 Section 69.108... Computation of Charges § 69.108 Transport rate benchmark. (a) For transport charges computed in accordance... interoffice transmission using the telephone company's DS1 special access rates. (b) Initial transport rates...

47 CFR 69.108 - Transport rate benchmark.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 47 Telecommunication 3 2011-10-01 2011-10-01 false Transport rate benchmark. 69.108 Section 69.108... Computation of Charges § 69.108 Transport rate benchmark. (a) For transport charges computed in accordance... interoffice transmission using the telephone company's DS1 special access rates. (b) Initial transport rates...

47 CFR 69.112 - Direct-trunked transport.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 47 Telecommunication 3 2011-10-01 2011-10-01 false Direct-trunked transport. 69.112 Section 69.112... Computation of Charges § 69.112 Direct-trunked transport. (a) A flat-rated direct-trunked transport charge... other persons that use telephone company direct-trunked transport facilities. (b)(1) For telephone...

Temperature-Dependent Charge Transport through Individually Contacted DNA Origami-Based Au Nanowires.

PubMed

Teschome, Bezu; Facsko, Stefan; Schönherr, Tommy; Kerbusch, Jochen; Keller, Adrian; Erbe, Artur

2016-10-11

DNA origami nanostructures have been used extensively as scaffolds for numerous applications such as for organizing both organic and inorganic nanomaterials, studying single molecule reactions, and fabricating photonic devices. Yet, little has been done toward the integration of DNA origami nanostructures into nanoelectronic devices. Among other challenges, the technical difficulties in producing well-defined electrical contacts between macroscopic electrodes and individual DNA origami-based nanodevices represent a serious bottleneck that hinders the thorough characterization of such devices. Therefore, in this work, we have developed a method to electrically contact individual DNA origami-based metallic nanowires using electron beam lithography. We then characterize the charge transport of such nanowires in the temperature range from room temperature down to 4.2 K. The room temperature charge transport measurements exhibit ohmic behavior, whereas at lower temperatures, multiple charge transport mechanisms such as tunneling and thermally assisted transport start to dominate. Our results confirm that charge transport along metallized DNA origami nanostructures may deviate from pure metallic behavior due to several factors including partial metallization, seed inhomogeneities, impurities, and weak electronic coupling among AuNPs. Besides, this study further elucidates the importance of variable temperature measurements for determining the dominant charge transport mechanisms for conductive nanostructures made by self-assembly approaches.

Charging and Transport Dynamics of a Flow-Through Electrode Capacitive Deionization System.

PubMed

Qu, Yatian; Campbell, Patrick G; Hemmatifar, Ali; Knipe, Jennifer M; Loeb, Colin K; Reidy, John J; Hubert, Mckenzie A; Stadermann, Michael; Santiago, Juan G

2018-01-11

We present a study of the interplay among electric charging rate, capacitance, salt removal, and mass transport in "flow-through electrode" capacitive deionization (CDI) systems. We develop two models describing coupled transport and electro-adsorption/desorption which capture salt removal dynamics. The first model is a simplified, unsteady zero-dimensional volume-averaged model which identifies dimensionless parameters and figures of merits associated with cell performance. The second model is a higher fidelity area-averaged model which captures both spatial and temporal responses of charging. We further conducted an experimental study of these dynamics and considered two salt transport regimes: (1) advection-limited regime and (2) dispersion-limited regime. We use these data to validate models. The study shows that, in the advection-limited regime, differential charge efficiency determines the salt adsorption at the early stage of the deionization process. Subsequently, charging transitions to a quasi-steady state where salt removal rate is proportional to applied current scaled by the inlet flow rate. In the dispersion-dominated regime, differential charge efficiency, cell volume, and diffusion rates govern adsorption dynamics and flow rate has little effect. In both regimes, the interplay among mass transport rate, differential charge efficiency, cell capacitance, and (electric) charging current governs salt removal in flow-through electrode CDI.

Ion distribution in the hot spot of an inertial confinement fusion plasma

NASA Astrophysics Data System (ADS)

Tang, Xianzhu; Guo, Zehua; Berk, Herb

2012-10-01

Maximizing the fusion gain of inertial confinement fusion (ICF) for inertial fusion energy (IFE) applications leads to the standard scenario of central hot spot ignition followed by propagating burn wave through the cold/dense assembled fuel. The fact that the hot spot is surrounded by cold but dense fuel layer introduces subtle plasma physics which requires a kinetic description. Here we perform Fokker-Planck calculations and kinetic PIC simulations for an ICF plasma initially in pressure balance but having large temperature gradient over a narrow transition layer. The loss of the fast ion tail from the hot spot, which is important for fusion reactivity, is quantified by Fokker-Planck models. The role of electron energy transport and the ambipolar electric field is investigated via kinetic simulations and the fluid moment models. The net effect on both hot spot ion temperature and the ion tail distribution, and hence the fusion reactivity, is elucidated.

Effect of Low Temperature on Charge Transport in Operational Planar and Mesoporous Perovskite Solar Cells.

PubMed

Petrović, Miloš; Ye, Tao; Chellappan, Vijila; Ramakrishna, Seeram

2017-12-13

Low-temperature optoelectrical studies of perovskite solar cells using MAPbI 3 and mixed-perovskite absorbers implemented into planar and mesoporous architectures reveal fundamental charge transporting properties in fully assembled devices operating under light bias. Both types of devices exhibit inverse correlation of charge carrier lifetime as a function of temperature, extending carrier lifetimes upon temperature reduction, especially after exposure to high optical biases. Contribution of bimolecular channels to the overall recombination process should not be overlooked because the density of generated charge surpasses trap-filling concentration requirements. Bimolecular charge recombination coefficient in both device types is smaller than Langevin theory prediction, and its mean value is independent of the applied illumination intensity. In planar devices, charge extraction declines upon MAPbI 3 transition from a tetragonal to an orthorhombic phase, indicating a connection between the trapping/detrapping mechanism and temperature. Studies on charge extraction by linearly increasing voltage further support this assertion, as charge carrier mobility dependence on temperature follows multiple-trapping predictions for both device structures. The monotonously increasing trend following the rise in temperature opposes the behavior observed in neat perovskite films and indicates the importance of transporting layers and the effect they have on charge transport in fully assembled solar cells. Low-temperature phase transition shows no pattern of influence on thermally activated electron/hole transport.

Role of carrier density and disorder on anisotropic charge transport in polypyrrole

NASA Astrophysics Data System (ADS)

Varade, Vaibhav; Anjaneyulu, P.; Suchand Sangeeth, C. S.; Ramesh, K. P.; Menon, Reghu

2013-01-01

Polypyrrole (PPy) has been synthesized electrochemically on platinum substrate by varying synthesis temperature and dopant concentration. The charge transport in PPy has been investigated as a function of temperature for both in-plane and out-of-plane geometry in a wide temperature range of 5 K-300 K. The charge transport showed strong anisotropy and various mechanisms were used to explain the transport. The conductivity ratio, σr = σ(300 K)/σ(5 K) is calculated for each sample to quantify the relative disorder. At all the temperatures, the conductivity values for in-plane transport are found to be more for PPy synthesized at lower temperature, while the behavior is found to be different for out-of-plane transport. The carrier density is found to play a crucial role in case of in-plane transport. An effort has been made to correlate charge transport to morphology by analyzing temperature and frequency dependence of conductivity. Charge transport in lateral direction is found to be dominated by hopping whereas tunneling mechanisms are dominated in vertical direction. Parameters such as density of states at the Fermi level [N(EF)], average hopping distance (R), and average hopping energy (W) have been estimated for each samples in both geometry.

Optoelectronic properties and depth profile of charge transport in nanocrystal films

NASA Astrophysics Data System (ADS)

Aigner, Willi; Bienek, Oliver; Desta, Derese; Wiggers, Hartmut; Stutzmann, Martin; Pereira, Rui N.

2017-07-01

We investigate the charge transport in nanocrystal (NC) films using field effect transistors (FETs) of silicon NCs. By studying films with various thicknesses in the dark and under illumination with photons with different penetration depths (UV and red light), we are able to predictably change the spatial distribution of charge carriers across the films' profile. The experimental data are compared with photoinduced charge carrier generation rates computed using finite-difference time-domain (FDTD) simulations complemented with optical measurements. This enables us to understand the optoelectronic properties of NC films and the depth profile dependence of the charge transport properties. From electrical measurements, we extract the total (bulk) photoinduced charge carrier densities (nphoto) and the photoinduced charge carrier densities in the FETs channel (nphoto*). We observe that the values of nphoto and their dependence on film thickness are similar for UV and red light illumination, whereas a significant difference is observed for the values of nphoto*. The dependencies of nphoto and nphoto* on film thickness and illumination wavelength are compared with data from FDTD simulations. Combining experimental data and simulation results, we find that charge carriers in the top rough surface of the films cannot contribute to the macroscopic charge transport. Moreover, we conclude that below the top rough surface of NC films, the efficiency of charge transport, including the charge carrier mobility, is homogeneous across the film thickness. Our work shows that the use of NC films as photoactive layers in applications requiring harvesting of strongly absorbed photons such as photodetectors and photovoltaics demands a very rigorous control over the films' roughness.

Charge effects on the hindered transport of macromolecules across the endothelial surface glycocalyx layer.

PubMed

Sugihara-Seki, Masako; Akinaga, Takeshi; O-Tani, Hideyuki

2012-01-01

A fluid mechanical and electrostatic model for the transport of solute molecules across the vascular endothelial surface glycocalyx layer (EGL) was developed to study the charge effect on the diffusive and convective transport of the solutes. The solute was assumed to be a spherical particle with a constant surface charge density, and the EGL was represented as an array of periodically arranged circular cylinders of like charge, with a constant surface charge density. By combining the fluid mechanical analyses for the flow around a solute suspended in an electrolyte solution and the electrostatic analyses for the free energy of the interaction between the solute and cylinders based on a mean field theory, we estimated the transport coefficients of the solute across the EGL. Both of diffusive and convective transports are reduced compared to those for an uncharged system, due to the stronger exclusion of the solute that results from the repulsive electrostatic interaction. The model prediction for the reflection coefficient for serum albumin agreed well with experimental observations if the charge density in the EGL is ranged from approximately -10 to -30 mEq/l.

Theory of grain alignment in molecular clouds

NASA Technical Reports Server (NTRS)

Roberge, Wayne G.

1993-01-01

Research accomplishments are presented and include the following: (1) mathematical theory of grain alignment; (2) super-paramagnetic alignment of molecular cloud grains; and (3) theory of grain alignment by ambipolar diffusion.

The plasma-wall transition layers in the presence of collisions with a magnetic field parallel to the wall

NASA Astrophysics Data System (ADS)

Moritz, J.; Faudot, E.; Devaux, S.; Heuraux, S.

2018-01-01

The plasma-wall transition is studied by means of a particle-in-cell (PIC) simulation in the configuration of a parallel to the wall magnetic field (B), with collisions between charged particles vs. neutral atoms taken into account. The investigated system consists of a plasma bounded by two absorbing walls separated by 200 electron Debye lengths (λd). The strength of the magnetic field is chosen such as the ratio λ d / r l , with rl being the electron Larmor radius, is smaller or larger than unity. Collisions are modelled with a simple operator that reorients randomly ion or electron velocity, keeping constant the total kinetic energy of both the neutral atom (target) and the incident charged particle. The PIC simulations show that the plasma-wall transition consists in a quasi-neutral region (pre-sheath), from the center of the plasma towards the walls, where the electric potential or electric field profiles are well described by an ambipolar diffusion model, and in a second region at the vicinity of the walls, called the sheath, where the quasi-neutrality breaks down. In this peculiar geometry of B and for a certain range of the mean-free-path, the sheath is found to be composed of two charged layers: the positive one, close to the walls, and the negative one, towards the plasma and before the neutral pre-sheath. Depending on the amplitude of B, the spatial variation of the electric potential can be non-monotonic and presents a maximum within the sheath region. More generally, the sheath extent as well as the potential drop within the sheath and the pre-sheath is studied with respect to B, the mean-free-path, and the ion and electron temperatures.

49 CFR 375.705 - If a shipment is transported on more than one vehicle, what charges may I collect at delivery?

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 5 2014-10-01 2014-10-01 false If a shipment is transported on more than one vehicle, what charges may I collect at delivery? 375.705 Section 375.705 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL MOTOR CARRIER SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION FEDERAL MOTOR CARRIER SAFETY...

Electron–hole asymmetry of the topological surface states in strained HgTe

PubMed Central

Jost, Andreas; Bendias, Michel; Böttcher, Jan; Hankiewicz, Ewelina; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens W.; Maan, Jan C.; Zeitler, Uli; Hussey, Nigel; Wiedmann, Steffen

2017-01-01

Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint. First, we establish the existence of exclusively surface-dominated transport via the observation of an ambipolar surface quantum Hall effect and quantum oscillations in the Seebeck and Nernst effect. Second, we show that, whereas the thermopower is diffusion driven for surface electrons, both diffusion and phonon drag contributions are essential for the hole surface carriers. This distinct behavior in the thermoelectric response is explained by a strong deviation from the linear dispersion relation for the surface states, with a much flatter dispersion for holes compared with electrons. These findings show that the metallic surface states in topological insulators can exhibit both strong electron–hole asymmetry and a strong deviation from a linear dispersion but remain topologically protected. PMID:28280101

Defect states and charge transport in quantum dot solids

DOE PAGES

Brawand, Nicholas P.; Goldey, Matthew B.; Vörös, Márton; ...

2017-01-16

Defects at the surface of semiconductor quantum dots (QDs) give rise to electronic states within the gap, which are detrimental to charge transport properties of QD devices. We investigated charge transport in silicon quantum dots with deep and shallow defect levels, using ab initio calculations and constrained density functional theory. We found that shallow defects may be more detrimental to charge transport than deep ones, with associated transfer rates differing by up to 5 orders of magnitude for the small dots (1-2 nm) considered here. Hence, our results indicate that the common assumption, that the ability of defects to trapmore » charges is determined by their position in the energy gap of the QD, is too simplistic, and our findings call for a reassessment of the role played by shallow defects in QD devices. Altogether, our results highlight the key importance of taking into account the atomistic structural properties of QD surfaces when investigating transport properties.« less

Transport, charge exchange and loss of energetic heavy ions in the earth's radiation belts - Applicability and limitations of theory

NASA Technical Reports Server (NTRS)

Spjeldvik, W. N.

1981-01-01

Computer simulations of processes which control the relative abundances of ions in the trapping regions of geospace are compared with observations from discriminating ion detectors. Energy losses due to Coulomb collisions between ions and exospheric neutrals are considered, along with charge exchange losses and internal charge exchanges. The time evolution of energetic ion fluxes of equatorially mirroring ions under radial diffusion is modelled to include geomagnetic and geoelectric fluctutations. Limits to the validity of diffusion transport theory are discussed, and the simulation is noted to contain provisions for six ionic charge states and the source effect on the radiation belt oxygen ion distributions. Comparisons are made with ion flux data gathered on Explorer 45 and ISEE-1 spacecraft and results indicate that internal charge exchanges cause the radiation belt ion charge state to be independent of source charge rate characteristics, and relative charge state distribution is independent of the radially diffusive transport rate below the charge state redistribution zone.

Study of Charge Transport in Vertically Aligned Nitride Nanowire Based Core Shell P-I-N Junctions

DTIC Science & Technology

2016-07-01

Vertically- Aligned Nitride Nanowire Based Core Shell P-I-N Junctions Distribution Statement A. Approved for public release; distribution is...Study of Charge Transport in Vertically- Aligned Nitride Nanowire Based Core Shell P-I-N Junctions Grant Number: HDTRA1-14-1-0003 Principal...Investigator: Abhishek Motayed University of Maryland DISTRIBUTION A: Public Release Study of Charge Transport in Vertically-Aligned Nitride Nanowire

Boundary-layer electron profiles for entry of a blunts slender body at high altitude

NASA Technical Reports Server (NTRS)

Evans, J. S.; Schexnayder, C. J., Jr.; Huber, P. W.

1973-01-01

New calculations of boundary-layer electron concentration profiles for entry of a blunt-nosed slender body into the earth's atmosphere are compared with previous calculations in which ambipolar diffusion was neglected. The old and new results agree in those flight regimes where ambipolar diffusion is unimportant, but large differences are noted in both peak electron concentration and profile shape at the higher altitudes, where diffusion effects are greatest. The new results are also compared with flight-measured profiles and with calculated profiles for a viscous-shock-layer theory which was recently reported in the literature. The boundary-layer results and the data agree in most respects. Differences which occur between predicted results and the data in the outer parts of the profile are discussed in terms of the effects of aerodynamic heating of the probes.

Naphthalene bisimides asymmetrically and symmetrically N-substituted with triarylamine--comparison of spectroscopic, electrochemical, electronic and self-assembly properties.

PubMed

Rybakiewicz, Renata; Zapala, Joanna; Djurado, David; Nowakowski, Robert; Toman, Petr; Pfleger, Jiri; Verilhac, Jean-Marie; Zagorska, Malgorzata; Pron, Adam

2013-02-07

Two semiconducting naphthalene bisimides were comparatively studied: NBI-(TAA)(2), symmetrically N-substituted with triaryl amine and asymmetric NBI-TAA-Oc with triaryl amine and octyl N-substituents. Both compounds show very similar spectroscopic and redox properties but differ in their supramolecular organization. As evidenced by STM, in monolayers on HOPG they form ordered 2D structures, however of different packing patterns. NBI-(TAA)(2) does not form ordered 3D structures, yielding amorphous thin films whereas films of NBI-TAA-Oc are highly crystalline. DFT calculations predict the ionization potential (IP) of 5.22 eV and 5.18 eV for NBI-TAA-Oc and NBI-(TAA)(2), respectively, as well as the electron affinity values (EA) of -3.25 eV and -3.22 eV. These results are consistent with the cyclic voltammetry data which yield similar values of IP (5.20 eV and 5.19 eV) and somehow different values of EA (-3.80 eV and -3.83 eV). As judged from these data, both semiconductors should exhibit ambipolar behavior. Indeed, NBI-TAA-Oc is ambipolar, showing hole and electron mobilities of 4.5 × 10(-5) cm(2)/(V s) and of 2.6 × 10(-4) cm(2)/(V s), respectively, in the field effect transistor configuration. NBI-(TAA)(2) is not ambipolar and yields field effect only in the p-channel configuration. This different behavior is rationalized on the basis of structural factors.

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics.

PubMed

Oyedele, Akinola D; Yang, Shize; Liang, Liangbo; Puretzky, Alexander A; Wang, Kai; Zhang, Jingjie; Yu, Peng; Pudasaini, Pushpa R; Ghosh, Avik W; Liu, Zheng; Rouleau, Christopher M; Sumpter, Bobby G; Chisholm, Matthew F; Zhou, Wu; Rack, Philip D; Geohegan, David B; Xiao, Kai

2017-10-11

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe 2 exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from 0 (bulk) to 1.3 eV (monolayer). The Raman-active vibrational modes of PdSe 2 were identified using polarized Raman spectroscopy, and a strong interlayer interaction was revealed from large, thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe 2 display tunable ambipolar charge carrier conduction with a high electron field-effect mobility of ∼158 cm 2 V -1 s -1 , indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.

Local Thermometry of Neutral Modes on the Quantum Hall Edge

NASA Astrophysics Data System (ADS)

Hart, Sean; Venkatachalam, Vivek; Pfeiffer, Loren; West, Ken; Yacoby, Amir

2012-02-01

A system of electrons in two dimensions and strong magnetic fields can be tuned to create a gapped 2D system with one dimensional channels along the edge. Interactions among these edge modes can lead to independent transport of charge and heat, even in opposite directions. Measuring the chirality and transport properties of these charge and heat modes can reveal otherwise hidden structure in the edge. Here, we heat the outer edge of such a quantum Hall system using a quantum point contact. By placing quantum dots upstream and downstream along the edge of the heater, we can measure both the chemical potential and temperature of that edge to study charge and heat transport, respectively. We find that charge is transported exclusively downstream, but heat can be transported upstream when the edge has additional structure related to fractional quantum Hall physics.

Opto-electro-modulated transient photovoltage and photocurrent system for investigation of charge transport and recombination in solar cells.

PubMed

Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Wu, Huijue; Meng, Qingbo

2016-12-01

An opto-electro-modulated transient photovoltage/photocurrent system has been developed to probe microscopic charge processes of a solar cell in its adjustable operating conditions. The reliability of this system is carefully determined by electric circuit simulations and experimental measurements. Using this system, the charge transport, recombination and storage properties of a conventional multicrystalline silicon solar cell under different steady-state bias voltages, and light illumination intensities are investigated. This system has also been applied to study the influence of the hole transport material layer on charge extraction and the microscopic charge processes behind the widely considered photoelectric hysteresis in perovskite solar cells.

Interband cascade detectors

NASA Technical Reports Server (NTRS)

Chuang, Shun Lien (Inventor); Li, Jian (Inventor); Yang, Rui Q. (Inventor)

2007-01-01

A device for detecting radiation, typically in the infrared. Photons are absorbed in an active region of a semiconductor device such that the absorption induces an interband electronic transition and generates photo-excited charge carriers. The charge carriers are coupled into a carrier transport region having multiple quantum wells and characterized by intersubband relaxation that provides rapid charge carrier collection. The photo-excited carriers are collected from the carrier transport region at a conducting contact region. Another carrier transport region characterized by interband tunneling for multiple stages draws charge carriers from another conducting contact and replenishes the charge carriers to the active region for photo-excitation. A photocurrent is generated between the conducting contacts through the active region of the device.

Evolved phase separation toward balanced charge transport and high efficiency in polymer solar cells.

PubMed

Fan, Haijun; Zhang, Maojie; Guo, Xia; Li, Yongfang; Zhan, Xiaowei

2011-09-01

Understanding effect of morphology on charge carrier transport within polymer/fullerene bulk heterojunction is necessary to develop high-performance polymer solar cells. In this work, we synthesized a new benzodithiophene-based polymer with good self-organization behavior as well as favorable morphology evolution of its blend films with PC(71)BM under improved processing conditions. Charge carrier transport behavior of blend films was characterized by space charge limited current method. Evolved blend film morphology by controlling blend composition and additive content gradually reaches an optimized state, featured with nanoscale fibrilla polymer phase in moderate size and balanced mobility ratio close to 1:1 for hole and electron. This optimized morphology toward more balanced charge carrier transport accounts for the best power conversion efficiency of 3.2%, measured under simulated AM 1.5 solar irradiation 100 mW/cm(2), through enhancing short circuit current and reducing geminate recombination loss.

Implementation of the reduced charge state method of calculating impurity transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crume, E.C. Jr.; Arnurius, D.E.

1982-07-01

A recent review article by Hirshman and Sigmar includes expressions needed to calculate the parallel friction coefficients, the essential ingredients of the plateau-Pfirsch-Schluter transport coefficients, using the method of reduced charge states. These expressions have been collected and an expanded notation introduced in some cases to facilitate differentiation between reduced charge state and full charge state quantities. A form of the Coulomb logarithm relevant to the method of reduced charge states is introduced. This method of calculating the f/sub ij//sup ab/ has been implemented in the impurity transport simulation code IMPTAR and has resulted in an overall reduction in computationmore » time of approximately 25% for a typical simulation of impurity transport in the Impurity Study Experiment (ISX-B). Results obtained using this treatment are almost identical to those obtained using an earlier approximate theory of Hirshman.« less

A common pathway for charge transport through voltage-sensing domains.

PubMed

Chanda, Baron; Bezanilla, Francisco

2008-02-07

Voltage-gated ion channels derive their voltage sensitivity from the movement of specific charged residues in response to a change in transmembrane potential. Several studies on mechanisms of voltage sensing in ion channels support the idea that these gating charges move through a well-defined permeation pathway. This gating pathway in a voltage-gated ion channel can also be mutated to transport free cations, including protons. The recent discovery of proton channels with sequence homology to the voltage-sensing domains suggests that evolution has perhaps exploited the same gating pathway to generate a bona fide voltage-dependent proton transporter. Here we will discuss implications of these findings on the mechanisms underlying charge (and ion) transport by voltage-sensing domains.

Modeling charge transport in organic photovoltaic materials.

PubMed

Nelson, Jenny; Kwiatkowski, Joe J; Kirkpatrick, James; Frost, Jarvist M

2009-11-17

The performance of an organic photovoltaic cell depends critically on the mobility of charge carriers within the constituent molecular semiconductor materials. However, a complex combination of phenomena that span a range of length and time scales control charge transport in disordered organic semiconductors. As a result, it is difficult to rationalize charge transport properties in terms of material parameters. Until now, efforts to improve charge mobilities in molecular semiconductors have proceeded largely by trial and error rather than through systematic design. However, recent developments have enabled the first predictive simulation studies of charge transport in disordered organic semiconductors. This Account describes a set of computational methods, specifically molecular modeling methods, to simulate molecular packing, quantum chemical calculations of charge transfer rates, and Monte Carlo simulations of charge transport. Using case studies, we show how this combination of methods can reproduce experimental mobilities with few or no fitting parameters. Although currently applied to material systems of high symmetry or well-defined structure, further developments of this approach could address more complex systems such anisotropic or multicomponent solids and conjugated polymers. Even with an approximate treatment of packing disorder, these computational methods simulate experimental mobilities within an order of magnitude at high electric fields. We can both reproduce the relative values of electron and hole mobility in a conjugated small molecule and rationalize those values based on the symmetry of frontier orbitals. Using fully atomistic molecular dynamics simulations of molecular packing, we can quantitatively replicate vertical charge transport along stacks of discotic liquid crystals which vary only in the structure of their side chains. We can reproduce the trends in mobility with molecular weight for self-organizing polymers using a cheap, coarse-grained structural simulation method. Finally, we quantitatively reproduce the field-effect mobility in disordered C60 films. On the basis of these results, we conclude that all of the necessary building blocks are in place for the predictive simulation of charge transport in macromolecular electronic materials and that such methods can be used as a tool toward the future rational design of functional organic electronic materials.

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps

PubMed Central

Mei, Yaochuan; Diemer, Peter J.; Niazi, Muhammad R.; Hallani, Rawad K.; Jarolimek, Karol; Day, Cynthia S.; Risko, Chad; Anthony, John E.; Amassian, Aram

2017-01-01

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms. PMID:28739934

Molecular Photovoltaics in Nanoscale Dimension

PubMed Central

Burtman, Vladimir; Zelichonok, Alexander; Pakoulev, Andrei V.

2011-01-01

This review focuses on the intrinsic charge transport in organic photovoltaic (PVC) devices and field-effect transistors (SAM-OFETs) fabricated by vapor phase molecular self-assembly (VP-SAM) method. The dynamics of charge transport are determined and used to clarify a transport mechanism. The 1,4,5,8-naphthalene-tetracarboxylic diphenylimide (NTCDI) SAM devices provide a useful tool to study the fundamentals of polaronic transport at organic surfaces and to discuss the performance of organic photovoltaic devices in nanoscale. Time-resolved photovoltaic studies allow us to separate the charge annihilation kinetics in the conductive NTCDI channel from the overall charge kinetic in a SAM-OFET device. It has been demonstrated that tuning of the type of conductivity in NTCDI SAM-OFET devices is possible by changing Si substrate doping. Our study of the polaron charge transfer in organic materials proposes that a cation-radical exchange (redox) mechanism is the major transport mechanism in the studied SAM-PVC devices. The role and contribution of the transport through delocalized states of redox active surface molecular aggregates of NTCDI are exposed and investigated. This example of technological development is used to highlight the significance of future technological development of nanotechnologies and to appreciate a structure-property paradigm in organic nanostructures. PMID:21339983

Impact of Space-Charge Layers on Sudden Death in Li/O2 Batteries.

PubMed

Radin, Maxwell D; Monroe, Charles W; Siegel, Donald J

2015-08-06

The performance of Li/O2 batteries is thought to be limited by charge transport through the solid Li2O2 discharge product. Prior studies suggest that electron tunneling is the main transport mechanism through thin, compact Li2O2 deposits. The present study employs a new continuum transport model to explore an alternative scenario, in which charge transport is mediated by polaron hopping. Unlike earlier models, which assume a uniform carrier concentration or local electroneutrality, the possibility of nonuniform space charge is accounted for at the Li2O2/electrolyte and Li2O2/electrode interfaces, providing a more realistic picture of transport in Li2O2 films. The temperature and current-density dependences of the discharge curves predicted by the model are in good agreement with flat-electrode experiments over a wide range of rates, supporting the hypothesis that polaron hopping contributes significantly to charge transport. Exercising the model suggests that this mechanism could explain the observed enhancement in cell performance at elevated temperature and that performance could be further improved by tuning the interfacial orientation of Li2O2 crystallites.

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps.

PubMed

Mei, Yaochuan; Diemer, Peter J; Niazi, Muhammad R; Hallani, Rawad K; Jarolimek, Karol; Day, Cynthia S; Risko, Chad; Anthony, John E; Amassian, Aram; Jurchescu, Oana D

2017-08-15

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

Charge transport through DNA based electronic barriers

NASA Astrophysics Data System (ADS)

Patil, Sunil R.; Chawda, Vivek; Qi, Jianqing; Anantram, M. P.; Sinha, Niraj

2018-05-01

We report charge transport in electronic 'barriers' constructed by sequence engineering in DNA. Considering the ionization potentials of Thymine-Adenine (AT) and Guanine-Cytosine (GC) base pairs, we treat AT as 'barriers'. The effect of DNA conformation (A and B form) on charge transport is also investigated. Particularly, the effect of width of 'barriers' on hole transport is investigated. Density functional theory (DFT) calculations are performed on energy minimized DNA structures to obtain the electronic Hamiltonian. The quantum transport calculations are performed using the Landauer-Buttiker framework. Our main findings are contrary to previous studies. We find that a longer A-DNA with more AT base pairs can conduct better than shorter A-DNA with a smaller number of AT base pairs. We also find that some sequences of A-DNA can conduct better than a corresponding B-DNA with the same sequence. The counterions mediated charge transport and long range interactions are speculated to be responsible for counter-intuitive length and AT content dependence of conductance of A-DNA.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stolterfoht, Martin; Armin, Ardalan; Pandey, Ajay K.

Photovoltaic performance in relation to charge transport is studied in efficient (7.6%) organic solar cells (PTB7:PC{sub 71}BM). Both electron and hole mobilities are experimentally measured in efficient solar cells using the resistance dependent photovoltage technique, while the inapplicability of classical techniques, such as space charge limited current and photogenerated charge extraction by linearly increasing voltage is discussed. Limits in the short-circuit current originate from optical losses, while charge transport is shown not to be a limiting process. Efficient charge extraction without recombination can be achieved with a mobility of charge carriers much lower than previously expected. The presence of dispersivemore » transport with strongly distributed mobilities in high efficiency solar cells is demonstrated. Reduced non-Langevin recombination is shown to be beneficial for solar cells with imbalanced, low, and dispersive electron and hole mobilities.« less

Dispersive charge transport due to strong charge dipole interactions of cyano-group in the cyano-carbazole based molecular glass

NASA Astrophysics Data System (ADS)

Oh, Dong Keun; Hong, Sung Mok; Lee, Cheol Eui; Kim, B.-S.; Jin, J.-I.

2005-12-01

Using the time of flight (ToF) method, we investigated the bipolar charge transport for two glass-forming molecules containing carbazole and cyano-carbazole moiety. The enhanced electron mobility was observed in the cyano-carbazole compound. From the numerical method based the Laplace formalism, the distribution of hole trapping energy was obtained for the carbazole compound. This result was compared with the exponential distribution extracted from dispersion parameter for the cyano-carbazole material. Considering charge-dipole interactions as a reason for the disordered trapping mechanism, we discussed dispersive charge transport induced by a strong dipolar (i.e. cyano) group by comparing the distributions of hole trapping sites for two compounds.

Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vilan, Ayelet

Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at themore » metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.« less

Coulomb Blockade and Multiple Andreev Reflection in a Superconducting Single-Electron Transistor

NASA Astrophysics Data System (ADS)

Lorenz, Thomas; Sprenger, Susanne; Scheer, Elke

2018-06-01

In superconducting quantum point contacts, multiple Andreev reflection (MAR), which describes the coherent transport of m quasiparticles each carrying an electron charge with m≥3, sets in at voltage thresholds eV = 2Δ /m. In single-electron transistors, Coulomb blockade, however, suppresses the current at low voltage. The required voltage for charge transport increases with the square of the effective charge eV∝ ( me) ^2. Thus, studying the charge transport in all-superconducting single-electron transistors (SSETs) sets these two phenomena into competition. In this article, we present the fabrication as well as a measurement scheme and transport data for a SSET with one junction in which the transmission and thereby the MAR contributions can be continuously tuned. All regimes from weak to strong coupling are addressed. We extend the Orthodox theory by incorporating MAR processes to describe the observed data qualitatively. We detect a new transport process the nature of which is unclear at present. Furthermore, we observe a renormalization of the charging energy when approaching the strong coupling regime.

Role of intermolecular charge delocalization and its dimensionality in efficient band-like electron transport in crystalline 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane (F2-TCNQ).

PubMed

Sosorev, Andrey Yu

2017-09-27

Theoretical understanding of charge transport in organic semiconductors is exclusively important for organic electronics, but still remains a subject of debate. The recently discovered record-high band-like electron mobility in single crystals of 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane (F 2 -TCNQ) is challenging from the theoretical viewpoint. First, the very small size of the F 2 -TCNQ molecule implies high reorganization energy that seems incompatible with efficient charge transport. Second, it is not clear why the crystals of a similar compound, 7,7,8,8-tetracyanoquinodimethane (TCNQ), show an inefficient hopping electron transport mechanism. To address these issues, we apply DFT and QM/MM calculations to the F n -TCNQ (n = 0,2,4) crystal series. We show that multidimensional intermolecular charge delocalization is of key importance for efficient charge transport in materials consisting of small-sized molecules, and commonly used guidelines for the search for high-mobility organic semiconductors are to be corrected.

The role of partial ionization effects in the chromosphere

PubMed Central

Martínez-Sykora, Juan; De Pontieu, Bart; Hansteen, Viggo; Carlsson, Mats

2015-01-01

The energy for the coronal heating must be provided from the convection zone. However, the amount and the method by which this energy is transferred into the corona depend on the properties of the lower atmosphere and the corona itself. We review: (i) how the energy could be built in the lower solar atmosphere, (ii) how this energy is transferred through the solar atmosphere, and (iii) how the energy is finally dissipated in the chromosphere and/or corona. Any mechanism of energy transport has to deal with the various physical processes in the lower atmosphere. We will focus on a physical process that seems to be highly important in the chromosphere and not deeply studied until recently: the ion–neutral interaction effects in the chromosphere. We review the relevance and the role of the partial ionization in the chromosphere and show that this process actually impacts considerably the outer solar atmosphere. We include analysis of our 2.5D radiative magnetohydrodynamic simulations with the Bifrost code (Gudiksen et al. 2011 Astron. Astrophys. 531, A154 (doi:10.1051/0004-6361/201116520)) including the partial ionization effects on the chromosphere and corona and thermal conduction along magnetic field lines. The photosphere, chromosphere and transition region are partially ionized and the interaction between ionized particles and neutral particles has important consequences on the magneto-thermodynamics of these layers. The partial ionization effects are treated using generalized Ohm's law, i.e. we consider the Hall term and the ambipolar diffusion (Pedersen dissipation) in the induction equation. The interaction between the different species affects the modelled atmosphere as follows: (i) the ambipolar diffusion dissipates magnetic energy and increases the minimum temperature in the chromosphere and (ii) the upper chromosphere may get heated and expanded over a greater range of heights. These processes reveal appreciable differences between the modelled atmospheres of simulations with and without ion–neutral interaction effects. PMID:25897096

Applications of a time-dependent polar ionosphere model for radio modification experiments

NASA Astrophysics Data System (ADS)

Fallen, Christopher Thomas

A time-dependent self-consistent ionosphere model (SLIM) has been developed to study the response of the polar ionosphere to radio modification experiments, similar to those conducted at the High-Frequency Active Auroral Research Program (HAARP) facility in Gakona, Alaska. SCIM solves the ion continuity and momentum equations, coupled with average electron and ion gas energy equations; it is validated by reproducing the diurnal variation of the daytime ionosphere critical frequency, as measured with an ionosonde. Powerful high-frequency (HF) electromagnetic waves can drive naturally occurring electrostatic plasma waves, enhancing the ionospheric reflectivity to ultra-high frequency (UHF) radar near the HF-interaction region as well as heating the electron gas. Measurements made during active experiments are compared with model calculations to clarify fundamental altitude-dependent physical processes governing the vertical composition and temperature of the polar ionosphere. The modular UHF ionosphere radar (MUIR), co-located with HAARP, measured HF-enhanced ion-line (HFIL) reflection height and observed that it ascended above its original altitude after the ionosphere had been HF-heated for several minutes. The HFIL ascent is found to follow from HF-induced depletion of plasma surrounding the F-region peak density layer, due to temperature-enhanced transport of atomic oxygen ions along the geomagnetic field line. The lower F-region and topside ionosphere also respond to HF heating. Model results show that electron temperature increases will lead to suppression of molecular ion recombination rates in the lower F region and enhancements of ambipolar diffusion in the topside ionosphere, resulting in a net enhancement of slant total electron content (TEC); these results have been confirmed by experiment. Additional evidence for the model-predicted topside ionosphere density enhancements via ambipolar diffusion is provided by in-situ measurements of ion density and vertical velocity over HAARP made by a Defense Meteorological Satellite Program (DMSP) satellite.

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

NASA Astrophysics Data System (ADS)

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-05-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque, are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport vectors is demonstrated that enables the estimation of tunneling spin transport properties based on experimentally measured SP-STM images. A considerable tunability of the spin transport vectors by the involved spin polarizations is also highlighted. These possibilities and the combined theory of tunneling charge and vector spin transport pave the way for gaining deep insight into electric-current-induced tunneling spin transport properties in SP-STM and to the related dynamics of complex magnetic textures at surfaces.

Charge transport in nanostructured materials: Implementation and verification of constrained density functional theory

DOE PAGES

Goldey, Matthew B.; Brawand, Nicholas P.; Voros, Marton; ...

2017-04-20

The in silico design of novel complex materials for energy conversion requires accurate, ab initio simulation of charge transport. In this work, we present an implementation of constrained density functional theory (CDFT) for the calculation of parameters for charge transport in the hopping regime. We verify our implementation against literature results for molecular systems, and we discuss the dependence of results on numerical parameters and the choice of localization potentials. In addition, we compare CDFT results with those of other commonly used methods for simulating charge transport between nanoscale building blocks. As a result, we show that some of thesemore » methods give unphysical results for thermally disordered configurations, while CDFT proves to be a viable and robust approach.« less

Utilization of photoinduced charge-separated state of donor-acceptor-linked molecules for regulation of cell membrane potential and ion transport.

PubMed

Numata, Tomohiro; Murakami, Tatsuya; Kawashima, Fumiaki; Morone, Nobuhiro; Heuser, John E; Takano, Yuta; Ohkubo, Kei; Fukuzumi, Shunichi; Mori, Yasuo; Imahori, Hiroshi

2012-04-11

The control of ion transport across cell membranes by light is an attractive strategy that allows targeted, fast control of precisely defined events in the biological membrane. Here we report a novel general strategy for the control of membrane potential and ion transport by using charge-separation molecules and light. Delivery of charge-separation molecules to the plasma membrane of PC12 cells by a membranous nanocarrier and subsequent light irradiation led to depolarization of the membrane potential as well as inhibition of the potassium ion flow across the membrane. Photoregulation of the cell membrane potential and ion transport by using charge-separation molecules is highly promising for control of cell functions. © 2012 American Chemical Society

Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Nan; Hu, Yongsheng, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn; Lin, Jie

A fabrication method for transparent ambipolar organic thin film transistors with transparent Sb{sub 2}O{sub 3}/Ag/Sb{sub 2}O{sub 3} (SAS) source and drain electrodes has been developed. A pentacene/N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) bilayer heterojunction is used as the active semiconductor. The electrodes are deposited by room temperature electron beam evaporation. The devices are fabricated without damaging the active layers. The SAS electrodes have high transmittance (82.5%) and low sheet resistance (8 Ω/sq). High performance devices with hole and electron mobilities of 0.3 cm{sup 2}/V s and 0.027 cm{sup 2}/V s, respectively, and average visible range transmittance of 72% were obtained. These transistors have potential for transparent logicmore » integrated circuit applications.« less

Transport in a field aligned magnetized plasma/neutral gas boundary: the end of the plasma

NASA Astrophysics Data System (ADS)

Cooper, Christopher Michael

The objective of this dissertation is to characterize the physics of a boundary layer between a magnetized plasma and a neutral gas along the direction of a confining magnetic field. A series of experiments are performed at the Enormous Toroidal Plasma Device (ETPD) at UCLA to study this field aligned Neutral Boundary Layer (NBL) at the end of the plasma. A Lanthanum Hexaboride (LaB6) cathode and semi-transparent anode creates a magnetized, current-free helium plasma which terminates on a neutral helium gas without touching any walls. Probes are inserted into the plasma to measure the basic plasma parameters and study the transport in the NBL. The experiment is performed in the weakly ionized limit where the plasma density (ne) is much less than the neutral density (nn) such that ne/nn < 5%. The NBL is characterized by a field-aligned electric field which begins at the point where the plasma pressure equilibrates with the neutral gas pressure. Beyond the pressure equilibration point the electrons and ions lose their momentum by collisions with the neutral gas and come to rest. An electric field is established self consistently to maintain a current-free termination through equilibration of the different species' stopping rates in the neutral gas. The electric field resembles a collisional quasineutral sheath with a length 10 times the electron-ion collision length, 100 times the neutral collision length, and 10,000 times the Debye length. Collisions with the neutral gas dominate the losses in the system. The measured plasma density loss rates are above the classical cross-field current-free ambipolar rate, but below the anomalous Bohm diffusion rate. The electron temperature is below the ionization threshold of the gas, 2.2 eV in helium. The ions are in thermal equilibrium with the neutral gas. A generalized theory of plasma termination in a Neutral Boundary Layer is applied to this case using a two-fluid, current-free, weakly ionized transport model. The electron and ion momentum equations along the field are combined in a generalized Ohm's law which predicts the axial electric field required to maintain a current-free termination. The pressure balance criteria for termination and the predicted electric field are confirmed over a scaling of plasma parameters. The experiment and the model are relevant for studying NBLs in other systems, such as the atmospheric termination of the aurora or detached gaseous divertors. A steady state modified ambipolar system is measured in the ETPD NBL. The drift speeds associated with these currents are a small fraction of the plasma flow speeds and the problem is treated as a perturbation to the termination model. The current-free condition on the model is relaxed to explain the presence of the divergence free current.

Rational Strategies for Efficient Perovskite Solar Cells.

PubMed

Seo, Jangwon; Noh, Jun Hong; Seok, Sang Il

2016-03-15

A long-standing dream in the large scale application of solar energy conversion is the fabrication of solar cells with high-efficiency and long-term stability at low cost. The realization of such practical goals depends on the architecture, process and key materials because solar cells are typically constructed from multilayer heterostructures of light harvesters, with electron and hole transporting layers as a major component. Recently, inorganic-organic hybrid lead halide perovskites have attracted significant attention as light absorbers for the fabrication of low-cost and high-efficiency solar cells via a solution process. This mainly stems from long-range ambipolar charge transport properties, low exciton binding energies, and suitable band gap tuning by managing the chemical composition. In our pioneering work, a new photovoltaic platform for efficient perovskite solar cells (PSCs) was proposed, which yielded a high power conversion efficiency (PCE) of 12%. The platform consisted of a pillared architecture of a three-dimensional nanocomposite of perovskites fully infiltrating mesoporous TiO2, resulting in the formation of continuous phases and perovskite domains overlaid with a polymeric hole conductor. Since then, the PCE of our PSCs has been rapidly increased from 3% to over 20% certified efficiency. The unprecedented increase in the PCE can be attributed to the effective integration of the advantageous attributes of the refined bicontinuous architecture, deposition process, and composition of perovskite materials. Specifically, the bicontinuous architectures used in the high efficiency comprise a layer of perovskite sandwiched between mesoporous metal-oxide layer, which is a very thinner than that of used in conventional dye-sensitized solar cells, and hole-conducting contact materials with a metal back contact. The mesoporous scaffold can affect the hysteresis under different scan direction in measurements of PSCs. The hysteresis also greatly depends on the cell architecture and perovskite composition. In this Account, we will describe what we do with major aspects including (1) the film morphology through the development of intermediate chemistry retarding the rapid reaction between methylammonium or formamidinium iodide and lead halide (PbI2) for improved perovskite film formation; (2) the phase stability and band gap tuning of the perovskite layer through the materials engineering; (3) the development of electron and hole transporting materials for carrier-selective contacting layers; and (4) the adoption of p-i-n and n-i-p architectures depending on the position of the electron or hole conducting layer in front of incident light. Finally, we will summarize the recent incredible achievements in PSCs, and finally provide challenges facing the future development and commercialization of PSCs.

Investigation of ion and electron heat transport of high- T e ECH heated discharges in the large helical device

DOE PAGES

Pablant, N. A.; Satake, S.; Yokoyama, M.; ...

2016-01-28

An analysis of the radial electric field and heat transport, both for ions and electrons, is presented for a high-more » $${{T}_{\\text{e}}}$$ electron cyclotron heated (ECH) discharge on the large helical device (LHD). Transport analysis is done using the task3d transport suite utilizing experimentally measured profiles for both ions and electrons. Ion temperature and perpendicular flow profiles are measured using the recently installed x-ray imaging crystal spectrometer diagnostic (XICS), while electron temperature and density profiles are measured using Thomson scattering. The analysis also includes calculated ECH power deposition profiles as determined through the travis ray-tracing code. This is the first time on LHD that this type of integrated transport analysis with measured ion temperature profiles has been performed without NBI, allowing the heat transport properties of plasmas with only ECH heating to be more clearly examined. For this study, a plasma discharge is chosen which develops a high central electron temperature ($${{T}_{\\text{eo}}}=9$$ keV) at moderately low densities ($${{n}_{\\text{eo}}}=1.5\\times {{10}^{19}}$$ m-3). The experimentally determined transport properties from task3d are compared to neoclassical predictions as calculated by the gsrake and fortec-3d codes. The predicted electron fluxes are seen to be an order of magnitude less than the measured fluxes, indicating that electron transport is largely anomalous, while the neoclassical and measured ion heat fluxes are of the same magnitude. Neoclassical predictions of a strong positive ambipolar electric field ($${{E}_{\\text{r}}}$$ ) in the plasma core are validated through comparisons to perpendicular flow measurements from the XICS diagnostic. Furthermore, this provides confidence that the predictions are producing physically meaningful results for the particle fluxes and radial electric field, which are a key component in correctly predicting plasma confinement.« less

Temperature dependent charge transport in poly(3-hexylthiophene) diodes

NASA Astrophysics Data System (ADS)

Rahaman, Abdulla Bin; Sarkar, Atri; Banerjee, Debamalya

2018-04-01

In this work, we present charge transport properties of poly(3-hexylthiophene) (P3HT) diodes under dark conditions. Temperature dependent current-voltage (J-V) characteristics shows that charge transport represents a transition from ohomic to trap limited current. The forward current density obeys a power law J˜Vm, m>2 represents the space charge limited current region in presence of traps within the band gap. Frequency dependent conductivity has been studied in a temperature range 150K-473K. The dc conductivity values show Arrhenius like behavior and it gives conductivity activation energy 223 meV. Temperature dependent conductivity indicates a thermodynamic transition of our system.

Highly tunable charge and spin transport in silicene junctions: phase transitions and half-metallic states.

PubMed

Mahdavifar, Maryam; Khoeini, Farhad

2018-08-10

We report peculiar charge and spin transport properties in S-shaped silicene junctions with the Kane-Mele tight-binding model. In this work, we investigate the effects of electric and exchange fields on the charge and spin transport properties. Our results show that by applying a perpendicular electric field, metal-semiconductor and also semimetal-semiconductor phase transitions occur in our systems. Furthermore, full spin current can be obtained in the structures, so the half-metallic states are observable. Our results enable us to control charge and spin currents and provide new opportunities and applications in silicene-based electronics, optoelectronics, and spintronics.

Towards a wave theory of charged beam transport: A collection of thoughts

NASA Technical Reports Server (NTRS)

Dattoli, G.; Mari, C.; Torre, A.

1992-01-01

We formulate in a rigorous way a wave theory of charged beam linear transport. The Wigner distribution function is introduced and provides the link with classical mechanics. Finally, the von Neumann equation is shown to coincide with the Liouville equation for the nonlinear transport.

Origin of traps and charge transport mechanism in hafnia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islamov, D. R., E-mail: damir@isp.nsc.ru; Gritsenko, V. A., E-mail: grits@isp.nsc.ru; Novosibirsk State University, Novosibirsk 630090

2014-12-01

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO{sub 2}. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO{sub 2} was determined based on the charge transport experiments.

Charge carrier transport in polycrystalline organic thin film based field effect transistors

NASA Astrophysics Data System (ADS)

Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

2016-05-01

The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

25th anniversary article: charge transport and recombination in polymer light-emitting diodes.

PubMed

Kuik, Martijn; Wetzelaer, Gert-Jan A H; Nicolai, Herman T; Craciun, N Irina; De Leeuw, Dago M; Blom, Paul W M

2014-01-01

This article reviews the basic physical processes of charge transport and recombination in organic semiconductors. As a workhorse, LEDs based on a single layer of poly(p-phenylene vinylene) (PPV) derivatives are used. The hole transport in these PPV derivatives is governed by trap-free space-charge-limited conduction, with the mobility depending on the electric field and charge-carrier density. These dependencies are generally described in the framework of hopping transport in a Gaussian density of states distribution. The electron transport on the other hand is orders of magnitude lower than the hole transport. The reason is that electron transport is hindered by the presence of a universal electron trap, located at 3.6 eV below vacuum with a typical density of ca. 3 × 10¹⁷ cm⁻³. The trapped electrons recombine with free holes via a non-radiative trap-assisted recombination process, which is a competing loss process with respect to the emissive bimolecular Langevin recombination. The trap-assisted recombination in disordered organic semiconductors is governed by the diffusion of the free carrier (hole) towards the trapped carrier (electron), similar to the Langevin recombination of free carriers where both carriers are mobile. As a result, with the charge-carrier mobilities and amount of trapping centers known from charge-transport measurements, the radiative recombination as well as loss processes in disordered organic semiconductors can be fully predicted. Evidently, future work should focus on the identification and removing of electron traps. This will not only eliminate the non-radiative trap-assisted recombination, but, in addition, will shift the recombination zone towards the center of the device, leading to an efficiency improvement of more than a factor of two in single-layer polymer LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dihedral angle control to improve the charge transport properties of conjugated polymers in organic field effect transistors

NASA Astrophysics Data System (ADS)

Dharmapurikar, Satej S.; Chithiravel, Sundaresan; Mane, Manoj V.; Deshmukh, Gunvant; Krishnamoorthy, Kothandam

2018-03-01

Diketopyrrolopyrrole (DPP) and i-Indigo (i-Ind) are two monomers that are widely explored as active materials in organic field effect transistor and solar cells. These two molecules showed impressive charge carrier mobility due to better packing that are facilitated by quadrupoles. We hypothesized that the copolymers of these monomers would also exhibit high charge carrier mobility. However, we envisioned that the dihedral angle at the connecting point between the monomers will play a crucial role in packing as well as charge transport. To understand the impact of dihedral angle on charge transport, we synthesized three copolymers, wherein the DPP was sandwiched between benzenes, thiophenes and furans. The copolymer of i-Indigo and furan comprising DPP showed a band gap of 1.4 eV with a very high dihedral angle of 179°. The polymer was found to pack better and the coherence length was found to be 112 Å. The hole carrier mobility of these polymer was found to be highest among the synthesized polymer i.e. 0.01 cm2/vs. The copolymer comprising benzene did not transport hole and electrons. The dihedral angle at the connecting point between i and Indigo and benzene DPP was 143 Å, which the packing and consequently charge transport properties.

Description of bipolar charge transport in polyethylene using a fluid model with a constant mobility: model prediction

NASA Astrophysics Data System (ADS)

LeRoy, S.; Segur, P.; Teyssedre, G.; Laurent, C.

2004-01-01

We present a conduction model aimed at describing bipolar transport and space charge phenomena in low density polyethylene under dc stress. In the first part we recall the basic requirements for the description of charge transport and charge storage in disordered media with emphasis on the case of polyethylene. A quick review of available conduction models is presented and our approach is compared with these models. Then, the bases of the model are described and related assumptions are discussed. Finally, results on external current, trapped and free space charge distributions, field distribution and recombination rate are presented and discussed, considering a constant dc voltage, a step-increase of the voltage, and a polarization-depolarization protocol for the applied voltage. It is shown that the model is able to describe the general features reported for external current, electroluminescence and charge distribution in polyethylene.

On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S.

The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by amore » Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.« less

Absence of ballistic charge transport in the half-filled 1D Hubbard model

NASA Astrophysics Data System (ADS)

Carmelo, J. M. P.; Nemati, S.; Prosen, T.

2018-05-01

Whether in the thermodynamic limit of lattice length L → ∞, hole concentration mηz = - 2 Sηz/L = 1 -ne → 0, nonzero temperature T > 0, and U / t > 0 the charge stiffness of the 1D Hubbard model with first neighbor transfer integral t and on-site repulsion U is finite or vanishes and thus whether there is or there is no ballistic charge transport, respectively, remains an unsolved and controversial issue, as different approaches yield contradictory results. (Here Sηz = - (L -Ne) / 2 is the η-spin projection and ne =Ne / L the electronic density.) In this paper we provide an upper bound on the charge stiffness and show that (similarly as at zero temperature), for T > 0 and U / t > 0 it vanishes for mηz → 0 within the canonical ensemble in the thermodynamic limit L → ∞. Moreover, we show that at high temperature T → ∞ the charge stiffness vanishes as well within the grand-canonical ensemble for L → ∞ and chemical potential μ →μu where (μ -μu) ≥ 0 and 2μu is the Mott-Hubbard gap. The lack of charge ballistic transport indicates that charge transport at finite temperatures is dominated by a diffusive contribution. Our scheme uses a suitable exact representation of the electrons in terms of rotated electrons for which the numbers of singly occupied and doubly occupied lattice sites are good quantum numbers for U / t > 0. In contrast to often less controllable numerical studies, the use of such a representation reveals the carriers that couple to the charge probes and provides useful physical information on the microscopic processes behind the exotic charge transport properties of the 1D electronic correlated system under study.

Determination of carrier lifetime and diffusion length in Al-doped 4H-SiC epilayers by time-resolved optical techniques

NASA Astrophysics Data System (ADS)

Liaugaudas, Gediminas; Dargis, Donatas; Kwasnicki, Pawel; Arvinte, Roxana; Zielinski, Marcin; Jarašiūnas, Kęstutis

2015-01-01

A series of p-type 4H-SiC epilayers with aluminium concentration ranging from 2  ×  1016 to 8  ×  1019 cm-3 were investigated by time-resolved optical techniques in order to determine the effect of aluminium doping on high-injection carrier lifetime at room temperature and the diffusion coefficient at different injections (from ≈3  ×  1018 to ≈5  ×  1019 cm-3) and temperatures (from 78 to 730 K). We find that the defect limited carrier lifetime τSRH decreases from 20 ns in the low-doped samples down to ≈0.6 ns in the heavily doped epilayers. Accordingly, the ambipolar diffusion coefficient decreases from Da = 3.5 cm2 s-1 down to ≈0.6 cm2 s-1, corresponding to the hole mobility of µh = 70 cm2 Vs-1 and 12 cm2 Vs-1, respectively. In the highly doped epilayers, the injection-induced decrease of the diffusion coefficient, due to the transition from the minority carrier diffusion to the ambipolar diffusion, provided the electron diffusion coefficient of De ≈ 3 cm2 s-1. The Al-doping resulted in the gradual decrease of the ambipolar diffusion length, from LD = 2.7 µm down to LD = 0.25 µm in the epilayers with the lowest and highest aluminium concentrations.

ON THE MISALIGNMENT BETWEEN CHROMOSPHERIC FEATURES AND THE MAGNETIC FIELD ON THE SUN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martínez-Sykora, Juan; Pontieu, Bart De; Hansteen, Viggo

2016-11-01

Observations of the upper chromosphere show an enormous amount of intricate fine structure. Much of this comes in the form of linear features, which are most often assumed to be well aligned with the direction of the magnetic field in the low plasma β regime that is thought to dominate the upper chromosphere. We use advanced radiative magnetohydrodynamic simulations, including the effects of ion-neutral interactions (using the generalized Ohm’s law) in the partially ionized chromosphere, to show that the magnetic field is often not well aligned with chromospheric features. This occurs where the ambipolar diffusion is large, i.e., ions andmore » neutral populations decouple as the ion-neutral collision frequency drops, allowing the field to slip through the neutral population; where currents perpendicular to the field are strong; and where thermodynamic timescales are longer than or similar to those of ambipolar diffusion. We find this often happens in dynamic spicule or fibril-like features at the top of the chromosphere. This has important consequences for field extrapolation methods, which increasingly use such upper chromospheric features to help constrain the chromospheric magnetic field: our results invalidate the underlying assumption that these features are aligned with the field. In addition, our results cast doubt on results from 1D hydrodynamic models, which assume that plasma remains on the same field lines. Finally, our simulations show that ambipolar diffusion significantly alters the amount of free energy available in the coronal part of our simulated volume, which is likely to have consequences for studies of flare initiation.« less

Estimation of Mesospheric Densities at Low Latitudes Using the Kunming Meteor Radar Together With SABER Temperatures

NASA Astrophysics Data System (ADS)

Yi, Wen; Xue, Xianghui; Reid, Iain M.; Younger, Joel P.; Chen, Jinsong; Chen, Tingdi; Li, Na

2018-04-01

Neutral mesospheric densities at a low latitude have been derived during April 2011 to December 2014 using data from the Kunming meteor radar in China (25.6°N, 103.8°E). The daily mean density at 90 km was estimated using the ambipolar diffusion coefficients from the meteor radar and temperatures from the Sounding of the Atmosphere using Broadband Emission Radiometry (SABER) instrument. The seasonal variations of the meteor radar-derived density are consistent with the density from the Mass Spectrometer and Incoherent Scatter (MSIS) model, show a dominant annual variation, with a maximum during winter, and a minimum during summer. A simple linear model was used to separate the effects of atmospheric density and the meteor velocity on the meteor radar peak detection height. We find that a 1 km/s difference in the vertical meteor velocity yields a change of approximately 0.42 km in peak height. The strong correlation between the meteor radar density and the velocity-corrected peak height indicates that the meteor radar density estimates accurately reflect changes in neutral atmospheric density and that meteor peak detection heights, when adjusted for meteoroid velocity, can serve as a convenient tool for measuring density variations around the mesopause. A comparison of the ambipolar diffusion coefficient and peak height observed simultaneously by two co-located meteor radars indicates that the relative errors of the daily mean ambipolar diffusion coefficient and peak height should be less than 5% and 6%, respectively, and that the absolute error of the peak height is less than 0.2 km.

Effects of pressure and electrical charge on macromolecular transport across bovine lens basement membrane.

PubMed

Ferrell, Nicholas; Cameron, Kathleen O; Groszek, Joseph J; Hofmann, Christina L; Li, Lingyan; Smith, Ross A; Bian, Aihua; Shintani, Ayumi; Zydney, Andrew L; Fissell, William H

2013-04-02

Molecular transport through the basement membrane is important for a number of physiological functions, and dysregulation of basement membrane architecture can have serious pathological consequences. The structure-function relationships that govern molecular transport in basement membranes are not fully understood. The basement membrane from the lens capsule of the eye is a collagen IV-rich matrix that can easily be extracted and manipulated in vitro. As such, it provides a convenient model for studying the functional relationships that govern molecular transport in basement membranes. Here we investigate the effects of increased transmembrane pressure and solute electrical charge on the transport properties of the lens basement membrane (LBM) from the bovine eye. Pressure-permeability relationships in LBM transport were governed primarily by changes in diffusive and convective contributions to solute flux and not by pressure-dependent changes in intrinsic membrane properties. The solute electrical charge had a minimal but statistically significant effect on solute transport through the LBM that was opposite of the expected electrokinetic behavior. The observed transport characteristics of the LBM are discussed in the context of established membrane transport modeling and previous work on the effects of pressure and electrical charge in other basement membrane systems. Copyright © 2013 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Chamber transport for heavy ion fusion

NASA Astrophysics Data System (ADS)

Olson, Craig L.

2014-01-01

A brief review is given of research on chamber transport for HIF (heavy ion fusion) dating from the first HIF Workshop in 1976 to the present. Chamber transport modes are categorized into ballistic transport modes and channel-like modes. Four major HIF reactor studies are summarized (HIBALL-II, HYLIFE-II, Prometheus-H, OSIRIS), with emphasis on the chamber transport environment. In general, many beams are used to provide the required symmetry and to permit focusing to the required small spots. Target parameters are then discussed, with a summary of the individual heavy ion beam parameters required for HIF. The beam parameters are then classified as to their line charge density and perveance, with special emphasis on the perveance limits for radial space charge spreading, for the space charge limiting current, and for the magnetic (Alfven) limiting current. The major experiments on ballistic transport (SFFE, Sabre beamlets, GAMBLE II, NTX, NDCX) are summarized, with specific reference to the axial electron trapping limit for charge neutralization. The major experiments on channel-like transport (GAMBLE II channel, GAMBLE II self-pinch, LBNL channels, GSI channels) are discussed. The status of current research on HIF chamber transport is summarized, and the value of future NDCX-II transport experiments for the future of HIF is noted.

Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene

NASA Astrophysics Data System (ADS)

Hu, Bo

2015-08-01

Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron-hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron-hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density.

Charge density dependent mobility of organic hole-transporters and mesoporous TiO₂ determined by transient mobility spectroscopy: implications to dye-sensitized and organic solar cells.

PubMed

Leijtens, Tomas; Lim, Jongchul; Teuscher, Joël; Park, Taiho; Snaith, Henry J

2013-06-18

Transient mobility spectroscopy (TMS) is presented as a new tool to probe the charge carrier mobility of commonly employed organic and inorganic semiconductors over the relevant range of charge densities. The charge density dependence of the mobility of semiconductors used in hybrid and organic photovoltaics gives new insights into charge transport phenomena in solid state dye sensitized solar cells. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dust in magnetised plasmas - Basic theory and some applications. [to planetary rings

NASA Technical Reports Server (NTRS)

Northrop, T. G.; Morfill, G. E.

1984-01-01

In this paper the theory of charged test particle motion in magnetic fields is reviewed. This theory is then extended to charged dust particles, for which gravity and charge fluctuations play an important role. It is shown that systematic drifts perpendicular to the magnetic field and stochastic transport effects may then have to be considered none of which occur in the case of atomic particles (with the exception of charge exchange reactions). Some applications of charged dust particle transport theory to planetary rings are then briefly discussed.

First-principles Study on the Charge Transport Mechanism of Lithium Sulfide (Li2 S) in Lithium-Sulfur Batteries.

PubMed

Kim, B S Do-Hoon; Lee, M S Byungju; Park, Kyu-Young; Kang, Kisuk

2016-04-20

The lithium-sulfur chemistry is regarded as a promising candidate for next-generation battery systems because of its high specific energy (1675 mA h g(-1) ). Although issues such as low cycle stability and power capability of the system remain to be addressed, extensive research has been performed experimentally to resolve these problems. Attaining a fundamental understanding of the reaction mechanism and its reaction product would further spur the development of lithium-sulfur batteries. Here, we investigated the charge transport mechanism of lithium sulfide (Li2 S), a discharge product of conventional lithium-sulfur batteries using first-principles calculations. Our calculations indicate that the major charge transport is governed by the lithium-ion vacancies among various possible charge carriers. Furthermore, the large bandgap and low concentration of electron polarons indicate that the electronic conduction negligibly contributes to the charge transport mechanism in Li2 S. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Directional Charge Separation in Isolated Organic Semiconductor Crystalline Nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barnes, Michael; Labastide, Joelle; Bond-Thompson, Hilary

2017-03-01

In the conventional view of organic photovoltaics (OPV), localized electronic excitations (excitons) formed in the active layer are transported by random 3D diffusion to an interface where charge separation and extraction take place. Because radiative de-excitation is usually strongly allowed in organic semiconductors, efficient charge separation requires high exciton mobility, with much of the diffusive motion ‘wasted’ in directions that don’t result in an interface encounter. Our research efforts are focused on ways to enforce a preferred directionality in energy and/or charge transport using ordered crystalline nanowires in which the intermolecular interactions that facilitate transport along, for example, the pi-stackingmore » axis, can be made several orders of magnitude stronger than those in a transverse direction. The results presented in our recent work (Nature Communications) is a first step towards realizing the goal of directional control of both energy transport and charge separation, where excitons shared between adjacent molecules dissociate exclusively along the pi-stacking direction.« less

Charge splitters and charge transport junctions based on guanine quadruplexes

NASA Astrophysics Data System (ADS)

Sha, Ruojie; Xiang, Limin; Liu, Chaoren; Balaeff, Alexander; Zhang, Yuqi; Zhang, Peng; Li, Yueqi; Beratan, David N.; Tao, Nongjian; Seeman, Nadrian C.

2018-04-01

Self-assembling circuit elements, such as current splitters or combiners at the molecular scale, require the design of building blocks with three or more terminals. A promising material for such building blocks is DNA, wherein multiple strands can self-assemble into multi-ended junctions, and nucleobase stacks can transport charge over long distances. However, nucleobase stacking is often disrupted at junction points, hindering electric charge transport between the two terminals of the junction. Here, we show that a guanine-quadruplex (G4) motif can be used as a connector element for a multi-ended DNA junction. By attaching specific terminal groups to the motif, we demonstrate that charges can enter the structure from one terminal at one end of a three-way G4 motif, and can exit from one of two terminals at the other end with minimal carrier transport attenuation. Moreover, we study four-way G4 junction structures by performing theoretical calculations to assist in the design and optimization of these connectors.

48 CFR 847.303-70 - F.o.b. origin, freight prepaid, transportation charges to be included on the invoice.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false F.o.b. origin, freight... Transportation in Supply Contracts 847.303-70 F.o.b. origin, freight prepaid, transportation charges to be included on the invoice. (a) The delivery terms will be stated as “f.o.b. origin, transportation prepaid...

7 CFR 1770.15 - Supplementary accounts required of all borrowers.

Code of Federal Regulations, 2010 CFR

2010-01-01

... process of manufacture for supply stock. Transportation charges and sales and use taxes, as far as.... Transportation and sales and use taxes which are not included as part of the cost of particular material shall be... transportation charges, sales and use taxes, and cash and other purchase discounts. Inventory shortages and...

Plug-In Electric Vehicle Handbook for Workplace Charging Hosts

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2013-08-01

Plug-in electric vehicles (PEVs) have immense potential for increasing the country's energy, economic, and environmental security, and they will play a key role in the future of U.S. transportation. By providing PEV charging at the workplace, employers are perfectly positioned to contribute to and benefit from the electrification of transportation. This handbook answers basic questions about PEVs and charging equipment, helps employers assess whether to offer workplace charging for employees, and outlines important steps for implementation.

Exciton shelves for charge and energy transport in third-generation quantum-dot devices

NASA Astrophysics Data System (ADS)

Goodman, Samuel; Singh, Vivek; Noh, Hyunwoo; Casamada, Josep; Chatterjee, Anushree; Cha, Jennifer; Nagpal, Prashant

2014-03-01

Quantum dots are semiconductor nanocrystallites with size-dependent quantum-confined energy levels. While they have been intensively investigated to utilize hot-carriers for photovoltaic applications, to bridge the mismatch between incident solar photons and finite bandgap of semiconductor photocells, efficient charge or exciton transport in quantum-dot films has proven challenging. Here we show development of new coupled conjugated molecular wires with ``exciton shelves'', or different energy levels, matched with the multiple energy levels of quantum dots. Using single nanoparticle and ensemble device measurements we show successful extraction and transport of both bandedge and high-energy charge carriers, and energy transport of excitons. We demonstrate using measurements of electronic density of states, that careful matching of energy states of quantum-dot with molecular wires is important, and any mismatch can generate midgap states leading to charge recombination and reduced efficiency. Therefore, these exciton-shelves and quantum dots can lead to development of next-generation photovoltaic and photodetection devices using simultaneous transport of bandedge and hot-carriers or energy transport of excitons in these nanostructured solution-processed films.

Link between hopping models and percolation scaling laws for charge transport in mixtures of small molecules

DOE PAGES

Ha, Dong -Gwang; Kim, Jang -Joo; Baldo, Marc A.

2016-04-29

Mixed host compositions that combine charge transport materials with luminescent dyes offer superior control over exciton formation and charge transport in organic light emitting devices (OLEDs). Two approaches are typically used to optimize the fraction of charge transport materials in a mixed host composition: either an empirical percolative model, or a hopping transport model. We show that these two commonly-employed models are linked by an analytic expression which relates the localization length to the percolation threshold and critical exponent. The relation is confirmed both numerically and experimentally through measurements of the relative conductivity of Tris(4-carbazoyl-9-ylphenyl) amine (TCTA) :1,3-bis(3,5-dipyrid-3-yl-phenyl) benzene (BmPyPb)more » mixtures with different concentrations, where the TCTA plays a role as hole conductor and the BmPyPb as hole insulator. Furthermore, the analytic relation may allow the rational design of mixed layers of small molecules for high-performance OLEDs.« less

Link between hopping models and percolation scaling laws for charge transport in mixtures of small molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ha, Dong-Gwang; Kim, Jang-Joo; Baldo, Marc A.

2016-04-01

Mixed host compositions that combine charge transport materials with luminescent dyes offer superior control over exciton formation and charge transport in organic light emitting devices (OLEDs). Two approaches are typically used to optimize the fraction of charge transport materials in a mixed host composition: either an empirical percolative model, or a hopping transport model. We show that these two commonly-employed models are linked by an analytic expression which relates the localization length to the percolation threshold and critical exponent. The relation is confirmed both numerically and experimentally through measurements of the relative conductivity of Tris(4-carbazoyl-9-ylphenyl)amine (TCTA) :1,3-bis(3,5-dipyrid-3-yl-phenyl)benzene (BmPyPb) mixtures withmore » different concentrations, where the TCTA plays a role as hole conductor and the BmPyPb as hole insulator. The analytic relation may allow the rational design of mixed layers of small molecules for high-performance OLEDs.« less

Correlational Effects of the Molecular-Tilt Configuration and the Intermolecular van der Waals Interaction on the Charge Transport in the Molecular Junction.

PubMed

Shin, Jaeho; Gu, Kyungyeol; Yang, Seunghoon; Lee, Chul-Ho; Lee, Takhee; Jang, Yun Hee; Wang, Gunuk

2018-06-25

Molecular conformation, intermolecular interaction, and electrode-molecule contacts greatly affect charge transport in molecular junctions and interfacial properties of organic devices by controlling the molecular orbital alignment. Here, we statistically investigated the charge transport in molecular junctions containing self-assembled oligophenylene molecules sandwiched between an Au probe tip and graphene according to various tip-loading forces ( F L ) that can control the molecular-tilt configuration and the van der Waals (vdW) interactions. In particular, the molecular junctions exhibited two distinct transport regimes according to the F L dependence (i.e., F L -dependent and F L -independent tunneling regimes). In addition, the charge-injection tunneling barriers at the junction interfaces are differently changed when the F L ≤ 20 nN. These features are associated to the correlation effects between the asymmetry-coupling factor (η), the molecular-tilt angle (θ), and the repulsive intermolecular vdW force ( F vdW ) on the molecular-tunneling barriers. A more-comprehensive understanding of these charge transport properties was thoroughly developed based on the density functional theory calculations in consideration of the molecular-tilt configuration and the repulsive vdW force between molecules.

Magnetoresistance and charge transport in graphene governed by nitrogen dopants.

PubMed

Rein, Markus; Richter, Nils; Parvez, Khaled; Feng, Xinliang; Sachdev, Hermann; Kläui, Mathias; Müllen, Klaus

2015-02-24

We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO2 wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10(13) cm(-2) at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers.

Neutral dynamics and ion energy transport in MST plasma

NASA Astrophysics Data System (ADS)

Xing, Zichuan; Nornberg, Mark; den Hartog, Daniel; Kumar, Santosh; Anderson, Jay

2015-11-01

Neutral dynamics can have a significant effect on ion energy transport through charge exchange collisions. Whereas previously charge exchange was considered a direct loss mechanism in MST plasmas, new analysis indicates that significant thermal charge exchange neutrals are reionized. Further, the temperatures of the neutral species in the core of the plasma are suspected to be much higher than room temperature, which has a large effect on ion energy losses due to charge exchange. The DEGAS2 Monte Carlo simulation code is applied to the MST reversed field pinch experiment to estimate the density and temperature profile of the neutral species. The result is then used to further examine the effect of the neutral species on ion energy transport in improved confinement plasmas. This enables the development of a model that accounts for collisional equilibration between species, classical convective and conductive energy transport, and energy loss due to charge exchange collisions. The goal is to quantify classical, stochastic, and anomalous ion heating and transport in RFP plasmas. Work supported by the US DOE. DEGAS2 is provided by PPPL and STRAHL is provided by Ralph Dux of the Max-Planck-Institut fur Plasmaphysik.

Surface charge-specific interactions between polymer nanoparticles and ABC transporters in Caco-2 cells

NASA Astrophysics Data System (ADS)

Bhattacharjee, Sourav; van Opstal, Edward J.; Alink, Gerrit M.; Marcelis, Antonius T. M.; Zuilhof, Han; Rietjens, Ivonne M. C. M.

2013-06-01

The surface charge-dependent transport of polymeric nanoparticles (PNPs) across Caco-2 monolayers grown on transwell culture systems as an in vitro model for intestinal transport was tested. The transport of well-characterized, monodisperse, and fluorescent tri-block copolymer nanoparticles (TCNPs/size 45 nm) and polystyrene nanoparticles (PSNPs/size 50 nm), with different surface charges (positive and negative), was quantified. The positive PNPs showed a higher intracellular uptake and flux across the Caco-2 monolayers than the negative PNPs. Multidrug resistance/P-glycoprotein (MDR1/P-gp), a specific ATP-binding cassette (ABC) transporter, was found to play a major role in the cellular efflux of positive PNPs, whereas the multidrug resistance protein 1 took part in the efflux of negative PNPs from Caco-2 cells. The positive PNPs also caused an increased cellular uptake and apical to basolateral transport of the carcinogen PhIP across the Caco-2 monolayer. The flavonoid quercetin, which is known to interact with ABC transporters, promoted the intracellular uptake of different PNPs and interfered with the normal distribution patterns of PNPs in the transwell system. These results indicate that PNPs display surface charge-specific interactions with ABC transporters and can even affect the bioavailability of toxic food-borne compounds (like pro-carcinogens).

Signatures of evanescent transport in ballistic suspended graphene-superconductor junctions

PubMed Central

Kumaravadivel, Piranavan; Du, Xu

2016-01-01

In Dirac materials, the low energy excitations behave like ultra-relativistic massless particles with linear energy dispersion. A particularly intriguing phenomenon arises with the intrinsic charge transport behavior at the Dirac point where the charge density approaches zero. In graphene, a 2-D Dirac fermion gas system, it was predicted that charge transport near the Dirac point is carried by evanescent modes, resulting in unconventional “pseudo-diffusive” charge transport even in the absence of disorder. In the past decade, experimental observation of this phenomenon remained challenging due to the presence of strong disorder in graphene devices which limits the accessibility of the low carrier density regime close enough to the Dirac point. Here we report transport measurements on ballistic suspended graphene-Niobium Josephson weak links that demonstrate a transition from ballistic to pseudo-diffusive like evanescent transport below a carrier density of ~1010 cm−2. Approaching the Dirac point, the sub-harmonic gap structures due to multiple Andreev reflections display a strong Fermi energy-dependence and become increasingly pronounced, while the normalized excess current through the superconductor-graphene interface decreases sharply. Our observations are in qualitative agreement with the long standing theoretical prediction for the emergence of evanescent transport mediated pseudo-diffusive transport in graphene. PMID:27080733

Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors

NASA Astrophysics Data System (ADS)

Li, Qian; Li, Shilong; Yang, Dehua; Su, Wei; Wang, Yanchun; Zhou, Weiya; Liu, Huaping; Xie, Sishen

2017-10-01

The electrical characteristics of carbon nanotube (CNT) thin-film transistors (TFTs) strongly depend on the properties of the gate dielectric that is in direct contact with the semiconducting CNT channel materials. Here, we systematically investigated the dielectric effects on the electrical characteristics of fully printed semiconducting CNT-TFTs by introducing the organic dielectrics of poly(methyl methacrylate) (PMMA) and octadecyltrichlorosilane (OTS) to modify SiO2 dielectric. The results showed that the organic-modified SiO2 dielectric formed a favorable interface for the efficient charge transport in s-SWCNT-TFTs. Compared to single-layer SiO2 dielectric, the use of organic-inorganic hybrid bilayer dielectrics dramatically improved the performances of SWCNT-TFTs such as mobility, threshold voltage, hysteresis and on/off ratio due to the suppress of charge scattering, gate leakage current and charge trapping. The transport mechanism is related that the dielectric with few charge trapping provided efficient percolation pathways for charge carriers, while reduced the charge scattering. High density of charge traps which could directly act as physical transport barriers and significantly restrict the charge carrier transport and, thus, result in decreased mobile carriers and low device performance. Moreover, the gate leakage phenomenon is caused by conduction through charge traps. So, as a component of TFTs, the gate dielectric is of crucial importance to the manufacture of high quality TFTs from the aspects of affecting the gate leakage current and device operation voltage, as well as the charge carrier transport. Interestingly, the OTS-modified SiO2 allows to directly print horizontally aligned CNT film, and the corresponding devices exhibited a higher mobility than that of the devices with the hybrid PMMA/SiO2 dielectric although the thickness of OTS layer is only ˜2.5 nm. Our present result may provide key guidance for the further development of printed nanomaterial electronics.

An acoustic charge transport imager for high definition television applications

NASA Technical Reports Server (NTRS)

Hunt, William D.; Brennan, Kevin F.; Summers, Chris J.

1992-01-01

In this report we present the progress during the second six month period of the project. This includes both experimental and theoretical work on the acoustic charge transport (ACT) portion of the chip, the theoretical program modelling of both the avalanche photodiode (APD) and the charge transfer and overflow transistor and the materials growth and fabrication part of the program.

Charge Transport Processes in Molecular Junctions

NASA Astrophysics Data System (ADS)

Smith, Christopher Eugene

Molecular electronics (ME) has evolved into a rich area of exploration that combines the fields of chemistry, materials, electronic engineering and computational modeling to explore the physics behind electronic conduction at the molecular level. Through studying charge transport properties of single molecules and nanoscale molecular materials the field has gained the potential to bring about new avenues for the miniaturization of electrical components where quantum phenomena are utilized to achieve solid state molecular device functionality. Molecular junctions are platforms that enable these studies and consist of a single molecule or a small group of molecules directly connected to electrodes. The work presented in this thesis has built upon the current understanding of the mechanisms of charge transport in ordered junctions using self-assembled monolayer (SAM) molecular thin films. Donor and acceptor compounds were synthesized and incorporated into SAMs grown on metal substrates then the transport properties were measured with conducting probe atomic force microscopy (CP-AFM). In addition to experimentally measured current-voltage (I-V) curves, the transport properties were addressed computationally and modeled theoretically. The key objectives of this project were to 1) investigate the impact of molecular structure on hole and electron charge transport, 2) understand the nature of the charge carriers and their structure-transport properties through long (<4 nm) conjugated molecular wires, and 3) quantitatively extract interfacial properties characteristic to macroscopic junctions, such as energy level alignment and molecule-contact electronic coupling from experimental I-V curves. Here, we lay ground work for creating a more complete picture of charge transport in macroscopically ordered molecular junctions of controlled architecture, length and charge carrier. The polaronic nature of hopping transport has been predicted in long, conjugated molecular wires. Using quantum-based calculations, we modeled 'p-type' polaron transport through oligophenylenethiophene (OPTI) wires and assigned transport activation energies to specific modes of nuclear motion. We also show control over 'n-type', LUMO-mediated transport in short ( 2 nm) redox-active perylenediimide (PDI) SAMs bound to contacts through isocyano linkers. By changing the contact work function (φ) and temperature, we were able to verify thermally-assisted LUMO transport. Transition voltage spectroscopy and the single level model was employed to fit the experimental I-V curves and extract the electronic coupling (epsilon) and the EF-LUMO offset (epsilonl). It was found that epsilonl does not change with φ (LUMO pinning), while Gamma changes with both φ and temperature. Further, the PDI SAMs could be reversibly chemically gated to modulate the transport. These results help advance our understanding of transport behavior in semiconducting molecular thin films, and open opportunities to engineer improved electronic functionality into molecular devices.

Photovoltaic performance of block copolymer devices is independent of the crystalline texture in the active layer

DOE PAGES

Guo, Changhe; Lee, Youngmin; Lin, Yen -Hao; ...

2016-06-15

The electronic properties of organic semiconductors are strongly influenced by intermolecular packing. When cast as thin films, crystalline π-conjugated molecules are strongly textured, potentially leading to anisotropic charge transport. Consequently, it is hypothesized that the orientation of crystallites in the active layer plays an important role in charge extraction and organic photovoltaic device performance. Here we demonstrate orientation control of molecular packing from mostly face-on to edge-on configurations in the active layer of P3HT- b-PFTBT block copolymer photovoltaics using 1-chloronaphthalene as a solvent additive. The effect of molecular orientations in P3HT crystals on charge transport and solar cell performance ismore » examined. We find that optimized photovoltaic device performance is independent of the crystalline texture of P3HT. Our observations provide further insights into the molecular organization required for efficient charge transport and overall device efficiencies. That is, the dominant crystal orientation, whether face-on or edge-on, is not critical to organic solar cells. Furthermore, a broad distribution of crystallite orientations ensures pathways for charge transport in any direction and enables efficient charge extraction in photovoltaic devices.« less

Tuning charge carrier transport and optical birefringence in liquid-crystalline thin films: A new design space for organic light-emitting diodes.

PubMed

Keum, Chang-Min; Liu, Shiyi; Al-Shadeedi, Akram; Kaphle, Vikash; Callens, Michiel Koen; Han, Lu; Neyts, Kristiaan; Zhao, Hongping; Gather, Malte C; Bunge, Scott D; Twieg, Robert J; Jakli, Antal; Lüssem, Björn

2018-01-15

Liquid-crystalline organic semiconductors exhibit unique properties that make them highly interesting for organic optoelectronic applications. Their optical and electrical anisotropies and the possibility to control the alignment of the liquid-crystalline semiconductor allow not only to optimize charge carrier transport, but to tune the optical property of organic thin-film devices as well. In this study, the molecular orientation in a liquid-crystalline semiconductor film is tuned by a novel blading process as well as by different annealing protocols. The altered alignment is verified by cross-polarized optical microscopy and spectroscopic ellipsometry. It is shown that a change in alignment of the liquid-crystalline semiconductor improves charge transport in single charge carrier devices profoundly. Comparing the current-voltage characteristics of single charge carrier devices with simulations shows an excellent agreement and from this an in-depth understanding of single charge carrier transport in two-terminal devices is obtained. Finally, p-i-n type organic light-emitting diodes (OLEDs) compatible with vacuum processing techniques used in state-of-the-art OLEDs are demonstrated employing liquid-crystalline host matrix in the emission layer.

Charge relaxation and dynamics in organic semiconductors

NASA Astrophysics Data System (ADS)

Kwok, H. L.

2006-08-01

Charge relaxation in dispersive materials is often described in terms of the stretched exponential function (Kohlrausch law). The process can be explained using a "hopping" model which in principle, also applies to charge transport such as current conduction. This work analyzed reported transient photoconductivity data on functionalized pentacene single crystals using a geometric hopping model developed by B. Sturman et al and extracted values (or range of values) on the materials parameters relevant to charge relaxation as well as charge transport. Using the correlated disorder model (CDM), we estimated values of the carrier mobility for the pentacene samples. From these results, we observed the following: i) the transport site density appeared to be of the same order of magnitude as the carrier density; ii) it was possible to extract lower bound values on the materials parameters linked to the transport process; and iii) by matching the simulated charge decay to the transient photoconductivity data, we were able to refine estimates on the materials parameters. The data also allowed us to simulate the stretched exponential decay. Our observations suggested that the stretching index and the carrier mobility were related. Physically, such interdependence would allow one to demarcate between localized molecular interactions and distant coulomb interactions.

Simulation of Space Charge Dynamic in Polyethylene Under DC Continuous Electrical Stress

NASA Astrophysics Data System (ADS)

Boukhari, Hamed; Rogti, Fatiha

2016-10-01

The space charge dynamic plays a very important role in the aging and breakdown of polymeric insulation materials under high voltage. This is due to the intensification of the local electric field and the attendant chemical-mechanical effects in the vicinity around the trapped charge. In this paper, we have investigated the space charge dynamic in low-density polyethylene under high direct-current voltage, which is evaluated by experimental conditions. The evaluation is on the basis of simulation using a bipolar charge transport model consisting of charge injection, transports, trapping, detrapping, and recombination phenomena. The theoretical formulation of the physical problem is based on the Poisson, the continuity, and the transport equations. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges (net charge density, mobile and trapped of electron density, mobile hole density), conduction and displacement current densities, and the external current. The result shows the appearance of the negative packet-like space charge with a large amount of the bulk under the dc electric field of 100 kV/mm, and the induced distortion of the electric field is largely near to the anode, about 39% higher than the initial electric field applied.

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.

PubMed

Lin, Yu-Chuan; Jariwala, Bhakti; Bersch, Brian M; Xu, Ke; Nie, Yifan; Wang, Baoming; Eichfeld, Sarah M; Zhang, Xiaotian; Choudhury, Tanushree H; Pan, Yi; Addou, Rafik; Smyth, Christopher M; Li, Jun; Zhang, Kehao; Haque, M Aman; Fölsch, Stefan; Feenstra, Randall M; Wallace, Robert M; Cho, Kyeongjae; Fullerton-Shirey, Susan K; Redwing, Joan M; Robinson, Joshua A

2018-02-27

Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe 2 ) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe 2 /sapphire exhibit ambipolar behavior with excellent on/off ratios (∼10 7 ), high current density (1-10 μA·μm -1 ), and good field-effect transistor mobility (∼30 cm 2 ·V -1 ·s -1 ) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saudari, Sangameshwar R.; Kagan, Cherie R.; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater densitymore » of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.« less

Solvent Additive-Assisted Anisotropic Assembly and Enhanced Charge Transport of π-Conjugated Polymer Thin Films.

PubMed

Jeong, Jae Won; Jo, Gyounglyul; Choi, Solip; Kim, Yoong Ahm; Yoon, Hyeonseok; Ryu, Sang-Wan; Jung, Jaehan; Chang, Mincheol

2018-05-30

Charge transport in π-conjugated polymer films involves π-π interactions within or between polymer chains. Here, we demonstrate a facile solution processing strategy that provides enhanced intra- and interchain π-π interactions of the resultant polymer films using a good solvent additive with low volatility. These increased interactions result in enhanced charge transport properties. The effect of the good solvent additive on the intra- and intermolecular interactions, morphologies, and charge transport properties of poly(3-hexylthiophene) (P3HT) films is systematically investigated. We found that the good solvent additive facilitates the self-assembly of P3HT chains into crystalline fibrillar nanostructures by extending the solvent drying time during thin-film formation. As compared to the prior approach using a nonsolvent additive with low volatility, the solvent blend system containing a good solvent additive results in enhanced charge transport in P3HT organic field-effect transistor (OFET) devices [from ca. 1.7 × 10 -2 to ca. 8.2 × 10 -2 cm 2 V -1 s -1 for dichlorobenzene (DCB) versus 4.4 × 10 -2 cm 2 V -1 s -1 for acetonitrile]. The mobility appears to be maximized over a broad spectrum of additive concentrations (1-7 vol %), indicative of a wide processing window. Detailed analysis results regarding the charge injection and transport characteristics of the OFET devices reveal that a high-boiling-point solvent additive decreases both the contact resistance ( R c ) and channel resistance ( R ch ), contributing to the mobility enhancement of the devices. Finally, the platform presented here is proven to be applicable to alternative good solvent additives with low volatility, such as chlorobenzene (CB) and trichlorobenzene (TCB). Specifically, the mobility enhancement of the resultant P3HT films increases in the order CB (bp 131 °C) < DCB (bp 180 °C) < TCB (bp 214 °C), suggesting that solvent additives with higher boiling points provide resultant films with preferable molecular ordering and morphologies for efficient charge transport.

Investigation of La1−xSrxCrO3−∂ (x ~ 0.1) as Membrane for Hydrogen Production

PubMed Central

Larring, Yngve; Vigen, Camilla; Ahouanto, Florian; Fontaine, Marie-Laure; Peters, Thijs; Smith, Jens B.; Norby, Truls; Bredesen, Rune

2012-01-01

Various inorganic membranes have demonstrated good capability to separate hydrogen from other gases at elevated temperatures. Hydrogen-permeable, dense, mixed proton-electron conducting ceramic oxides offer superior selectivity and thermal stability, but chemically robust candidates with higher ambipolar protonic and electronic conductivity are needed. In this work, we present for the first time the results of various investigations of La1−xSrxCrO3−∂ membranes for hydrogen production. We aim in particular to elucidate the material’s complex transport properties, involving co-ionic transport of oxide ions and protons, in addition to electron holes. This opens some new possibilities for efficient heat and mass transfer management in the production of hydrogen. Conductivity measurements as a function of pH2 at constant pO2 exhibit changes that reveal a significant hydration and presence of protons. The flux and production of hydrogen have been measured under different chemical gradients. In particular, the effect of water vapor in the feed and permeate gas stream sides was investigated with the aim of quantifying the ratio of hydrogen production by hydrogen flux from feed to permeate and oxygen flux the opposite way (“water splitting”). Deuterium labeling was used to unambiguously prove flux of hydrogen species. PMID:24958299

Electrification Opportunities in the Transportation Sector and Impact of Residential Charging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muratori, Matteo

This presentation provides an overview of electrification opportunities in the transportation sector and present results of a study assessing the impact of residential charging on residential power demand and electric power distribution infrastructure.

Transition from direct to inverted charge transport Marcus regions in molecular junctions via molecular orbital gating

NASA Astrophysics Data System (ADS)

Yuan, Li; Wang, Lejia; Garrigues, Alvar R.; Jiang, Li; Annadata, Harshini Venkata; Anguera Antonana, Marta; Barco, Enrique; Nijhuis, Christian A.

2018-04-01

Solid-state molecular tunnel junctions are often assumed to operate in the Landauer regime, which describes essentially activationless coherent tunnelling processes. In solution, on the other hand, charge transfer is described by Marcus theory, which accounts for thermally activated processes. In practice, however, thermally activated transport phenomena are frequently observed also in solid-state molecular junctions but remain poorly understood. Here, we show experimentally the transition from the Marcus to the inverted Marcus region in a solid-state molecular tunnel junction by means of intra-molecular orbital gating that can be tuned via the chemical structure of the molecule and applied bias. In the inverted Marcus region, charge transport is incoherent, yet virtually independent of temperature. Our experimental results fit well to a theoretical model that combines Landauer and Marcus theories and may have implications for the interpretation of temperature-dependent charge transport measurements in molecular junctions.

Anomalous-hydrodynamic analysis of charge-dependent elliptic flow in heavy-ion collisions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hongo, Masaru; Hirono, Yuji; Hirano, Tetsufumi

Anomalous hydrodynamics is a low-energy effective theory that captures effects of quantum anomalies. We develop a numerical code of anomalous hydrodynamics and apply it to dynamics of heavy-ion collisions, where anomalous transports are expected to occur. This is the first attempt to perform fully non-linear numerical simulations of anomalous hydrodynamics. We discuss implications of the simulations for possible experimental observations of anomalous transport effects. From analyses of the charge-dependent elliptic flow parameters (vmore » $$±\\atop{2}$$) as a function of the net charge asymmetry A ±, we find that the linear dependence of Δv$$±\\atop{2}$$ ≡ v$$-\\atop{2}$$ - v$$+\\atop{2}$$ on the net charge asymmetry A ± cannot be regarded as a robust signal of anomalous transports, contrary to previous studies. We, however, find that the intercept Δv$$±\\atop{2}$$ (A ± = 0) is sensitive to anomalous transport effects.« less

Anomalous-hydrodynamic analysis of charge-dependent elliptic flow in heavy-ion collisions

DOE PAGES

Hongo, Masaru; Hirono, Yuji; Hirano, Tetsufumi

2017-12-10

Anomalous hydrodynamics is a low-energy effective theory that captures effects of quantum anomalies. We develop a numerical code of anomalous hydrodynamics and apply it to dynamics of heavy-ion collisions, where anomalous transports are expected to occur. This is the first attempt to perform fully non-linear numerical simulations of anomalous hydrodynamics. We discuss implications of the simulations for possible experimental observations of anomalous transport effects. From analyses of the charge-dependent elliptic flow parameters (vmore » $$±\\atop{2}$$) as a function of the net charge asymmetry A ±, we find that the linear dependence of Δv$$±\\atop{2}$$ ≡ v$$-\\atop{2}$$ - v$$+\\atop{2}$$ on the net charge asymmetry A ± cannot be regarded as a robust signal of anomalous transports, contrary to previous studies. We, however, find that the intercept Δv$$±\\atop{2}$$ (A ± = 0) is sensitive to anomalous transport effects.« less

Electronic transport in organometallic perovskite CH{sub 3}NH{sub 3}PbI{sub 3}: The role of organic cation orientations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berdiyorov, G. R., E-mail: gberdiyorov@qf.org.qa; El-Mellouhi, F.; Madjet, M. E.

Density functional theory in combination with the nonequilibrium Green's function formalism is used to study the electronic transport properties of methylammonium lead-iodide perovskite CH{sub 3}NH{sub 3}PbI{sub 3}. Electronic transport in homogeneous ferroelectric and antiferroelectric phases, both of which do not contain any charged domain walls, is quite similar. The presence of charged domain wall drastically (by about an order of magnitude) enhances the electronic transport in the lateral direction. The increase of the transmission originates from the smaller variation of the electrostatic potential profile along the charged domain walls. This fact may provide a tool for tuning transport properties ofmore » such hybrid materials by manipulating molecular cations having dipole moment.« less

Magnetorotational instability in protoplanetary discs

NASA Astrophysics Data System (ADS)

Salmeron, Raquel; Wardle, Mark

2005-07-01

We investigate the linear growth and vertical structure of the magnetorotational instability (MRI) in weakly ionized, stratified accretion discs. The magnetic field is initially vertical and dust grains are assumed to have settled towards the mid-plane, so charges are carried by electrons and ions only. Solutions are obtained at representative radial locations from the central protostar for different choices of the initial magnetic field strength, sources of ionization, disc structure and configuration of the conductivity tensor. The MRI is active over a wide range of magnetic field strengths and fluid conditions in low-conductivity discs. Moreover, no evidence was found of a low-limit field strength below which unstable modes do not exist. For the minimum-mass solar nebula model, incorporating cosmic ray ionization, perturbations grow at 1 au for B<~ 8 G. For a significant subset of these strengths (200mG <~B<~ 5G), the maximum growth rate is of the order of the ideal magnetohydrodynamic (MHD) rate (0.75Ω). Hall conductivity modifies the structure and growth rate of global unstable modes at 1 au for all magnetic field strengths that support MRI. As a result, at this radius, modes obtained with a full conductivity tensor grow faster and are active over a more extended cross-section of the disc than perturbations in the ambipolar diffusion limit. For relatively strong fields (e.g. B>~ 200 mG), ambipolar diffusion alters the envelope shapes of the unstable modes, which peak at an intermediate height, instead of being mostly flat as modes in the Hall limit are in this region of parameter space. Similarly, when cosmic rays are assumed to be excluded from the disc by the winds emitted by the magnetically active protostar, unstable modes grow at this radius for B<~ 2 G. For strong fields, perturbations exhibit a kink at the height where X-ray ionization becomes active. Finally, for R= 5 au (10 au), unstable modes exist for B<~ 800 mG (B<~ 250 mG) and the maximum growth rate is close to the ideal-MHD rate for 20 <~B<~ 500 mG (2 <~B<~ 50 mG). Similarly, perturbations incorporating Hall conductivity have a higher wavenumber and grow faster than solutions in the ambipolar diffusion limit for B<~ 100 mG (B<~ 10 mG). Unstable modes grow even at the mid-plane for B>~ 100 mG (B~ 1 mG), but for weaker fields, a small dead region exists. This study shows that, despite the low magnetic coupling, the magnetic field is dynamically important for a large range of fluid conditions and field strengths in protostellar discs. An example of such magnetic activity is the generation of MRI unstable modes, which are supported at 1 au for field strengths up to a few gauss. Hall diffusion largely determines the structure and growth rate of these perturbations for all studied radii. At radii of order 1 au, in particular, it is crucial to incorporate the full conductivity tensor in the analysis of this instability and more generally in studies of the dynamics of astrophysical discs.

Conformational Transitions and Stop-and-Go Nanopore Transport of Single Stranded DNA on Charged Graphene

PubMed Central

Shankla, Manish; Aksimentiev, Aleksei

2014-01-01

Control over interactions with biomolecules holds the key to applications of graphene in biotechnology. One such application is nanopore sequencing, where a DNA molecule is electrophoretically driven through a graphene nanopore. Here, we investigate how interactions of single-stranded DNA and a graphene membrane can be controlled by electrically biasing the membrane. The results of our molecular dynamics simulations suggest that electric charge on graphene can force a DNA homopolymer to adopt a range of strikingly different conformations. The conformational response is sensitive to even very subtle nucleotide modifications, such as DNA methylation. The speed of DNA motion through a graphene nanopore is strongly affected by the graphene charge: a positive charge accelerates the motion whereas a negative charge arrests it. As a possible application of the effect, we demonstrate stop-and-go transport of DNA controlled by the charge of graphene. Such on-demand transport of DNA is essential for realizing nanopore sequencing. PMID:25296960

Conformational transitions and stop-and-go nanopore transport of single-stranded DNA on charged graphene

NASA Astrophysics Data System (ADS)

Shankla, Manish; Aksimentiev, Aleksei

2014-10-01

Control over interactions with biomolecules holds the key to applications of graphene in biotechnology. One such application is nanopore sequencing, where a DNA molecule is electrophoretically driven through a graphene nanopore. Here we investigate how interactions of single-stranded DNA and a graphene membrane can be controlled by electrically biasing the membrane. The results of our molecular dynamics simulations suggest that electric charge on graphene can force a DNA homopolymer to adopt a range of strikingly different conformations. The conformational response is sensitive to even very subtle nucleotide modifications, such as DNA methylation. The speed of DNA motion through a graphene nanopore is strongly affected by the graphene charge: a positive charge accelerates the motion, whereas a negative charge arrests it. As a possible application of the effect, we demonstrate stop-and-go transport of DNA controlled by the charge of graphene. Such on-demand transport of DNA is essential for realizing nanopore sequencing.

Using FT-IR Spectroscopy to Measure Charge Organization in Ionic Liquids

PubMed Central

Burba, Christopher M.; Janzen, Jonathan; Butson, Eric D.; Coltrain, Gage L.

2013-01-01

A major goal in the field of ionic liquids is correlating transport property trends with the underlying liquid structure of the compounds, such as the degree of charge organization among the constituent ions. Traditional techniques for experimentally assessing charge organization are specialized and not readily available for routine measurements. This represents a significant roadblock in elucidating these correlations. We use a combination of transmission and polarized-ATR infrared spectroscopy to measure the degree of charge organization for ionic liquids. The technique is illustrated with a family of 1-alkyl-3-methylimidazolium trifluoromethansulfonate ionic liquids at 30°C. As expected, the amount of charge organization decreases as the alkyl side chain is lengthened, highlighting the important role of short-range repulsive interactions in defining quasilattice structure. Inherent limitations of the method are identified and discussed. The quantitative measurements of charge organization are then correlated with trends in the transport properties of the compounds to highlight the relationship between charge and momentum transport and the underlying liquid structure. Most research laboratories possess infrared spectrometers capable of conducting these measurements, thus, the proposed method may represent a cost-effective solution for routinely measuring charge organization in ionic liquids. PMID:23781877

A Study of Charge Transport: Correlated Energetic Disorder in Organic Semiconductors, and the Fragment Hamiltonian

NASA Astrophysics Data System (ADS)

Allen, Jonathan Robert

This dissertation details work done on two different descriptions of charge transport. The first topic is energetic disorder in organic semiconductors, and its effect on charge transport. This is motivated primarily by solar cells, which can be broadly classified as either inorganic or organic. The inorganic class of solar cells is older, and more well-developed, with the most common type being constructed from crystalline silicon. The large silicon crystals required for these cells are expensive to manufacture, which gave rise to interest in photovoltaic cells made from much less costly organic polymers. These organic materials are also less efficient than their silicon counterparts, due to a large degree of spatial and energetic disorder. In this document, the sources and structure of energetic disorder in organic semiconductors are explored, with an emphasis on spatial correlations in energetic disorder. In order for an organic photovoltaic device to function, there must be photogeneration of an exciton (a bound electron-hole pair), exciton transport, exciton dissociation, and transport of the individual charges to their respective terminals. In the case of this thesis, the main focus is exciton dissociation. The effects of correlation on exciton dissociation are examined through computer simulation, and compared to the theory and simulations of previous researchers. We conclude that energetic disorder in organic semiconductors is spatially correlated, and that this correlation improves the ability of excitons to dissociate. The second topic of this dissertation is the Fragment Hamiltonian model. This is a model currently in development as a means of describing charge transport across a range of systems. Currently there are many different systems which exhibit various charge transport behaviors, which are described by several different models. The overarching goal of the Fragment Hamiltonian model is to construct a description of charge transport which accurately describes the behavior of multiple different materials (i.e. metallic conductors or ceramic insulators) in the appropriate limits. The Fragment Hamiltonian model is explored in the context of the tight-binding model, and properties such as the conductivity of several different systems are deduced.

Transport Imaging of Multi-Junction and CIGS Solar Cell Materials

DTIC Science & Technology

2011-12-01

solar cells start with the material charge transport parameters, namely the charge mobility, lifetime and diffusion length . It is the goal of...every solar cell manufacturer to maintain high carrier lifetime so as to realize long diffusion lengths . Long diffusion lengths ensure that the charges...Thus, being able to accurately determine the diffusion length of any solar cell material proves advantageous by providing insights

2D coherent charge transport in highly ordered conducting polymers doped by solid state diffusion

NASA Astrophysics Data System (ADS)

Kang, Keehoon; Watanabe, Shun; Broch, Katharina; Sepe, Alessandro; Brown, Adam; Nasrallah, Iyad; Nikolka, Mark; Fei, Zhuping; Heeney, Martin; Matsumoto, Daisuke; Marumoto, Kazuhiro; Tanaka, Hisaaki; Kuroda, Shin-Ichi; Sirringhaus, Henning

2016-08-01

Doping is one of the most important methods to control charge carrier concentration in semiconductors. Ideally, the introduction of dopants should not perturb the ordered microstructure of the semiconducting host. In some systems, such as modulation-doped inorganic semiconductors or molecular charge transfer crystals, this can be achieved by spatially separating the dopants from the charge transport pathways. However, in conducting polymers, dopants tend to be randomly distributed within the conjugated polymer, and as a result the transport properties are strongly affected by the resulting structural and electronic disorder. Here, we show that in the highly ordered lamellar microstructure of a regioregular thiophene-based conjugated polymer, a small-molecule p-type dopant can be incorporated by solid state diffusion into the layers of solubilizing side chains without disrupting the conjugated layers. In contrast to more disordered systems, this allows us to observe coherent, free-electron-like charge transport properties, including a nearly ideal Hall effect in a wide temperature range, a positive magnetoconductance due to weak localization and the Pauli paramagnetic spin susceptibility.

Organic n-type materials for charge transport and charge storage applications.

PubMed

Stolar, Monika; Baumgartner, Thomas

2013-06-21

Conjugated materials have attracted much attention toward applications in organic electronics in recent years. These organic species offer many advantages as potential replacement for conventional materials (i.e., silicon and metals) in terms of cheap fabrication and environmentally benign devices. While p-type (electron-donating or hole-conducting) materials have been extensively reviewed and researched, their counterpart n-type (electron-accepting or electron-conducting) materials have seen much less popularity despite the greater need for improvement. In addition to developing efficient charge transport materials, it is equally important to provide a means of charge storage, where energy can be used on an on-demand basis. This perspective is focused on discussing a selection of representative n-type materials and the efforts toward improving their charge-transport efficiencies. Additionally, this perspective will also highlight recent organic materials for battery components and the efforts that have been made to improve their environmental appeal.

Microscopic Simulations of Charge Transport in Disordered Organic Semiconductors

PubMed Central

2011-01-01

Charge carrier dynamics in an organic semiconductor can often be described in terms of charge hopping between localized states. The hopping rates depend on electronic coupling elements, reorganization energies, and driving forces, which vary as a function of position and orientation of the molecules. The exact evaluation of these contributions in a molecular assembly is computationally prohibitive. Various, often semiempirical, approximations are employed instead. In this work, we review some of these approaches and introduce a software toolkit which implements them. The purpose of the toolkit is to simplify the workflow for charge transport simulations, provide a uniform error control for the methods and a flexible platform for their development, and eventually allow in silico prescreening of organic semiconductors for specific applications. All implemented methods are illustrated by studying charge transport in amorphous films of tris-(8-hydroxyquinoline)aluminum, a common organic semiconductor. PMID:22076120

Thermally driven spin-Seebeck transport in chiral dsDNA-based molecular devices

NASA Astrophysics Data System (ADS)

Nian, L. L.; Zhang, Rong; Tang, F. R.; Tang, Jun; Bai, Long

2018-03-01

By employing the nonequilibrium Green's function technique, we study the thermal-induced spin-Seebeck transport through a chiral double-stranded DNA (dsDNA) connected to a normal-metal and a ferromagnetic lead. How the main parameters of the dsDNA-based system influence the spin-Seebeck transport is analyzed at length, and the thermally created charge (spin-related) current displays the rectification effect and the negative differential thermal conductance feature. More importantly, the spin current exhibits the rectification behavior of the spin-Seebeck effect; even the perfect spin-Seebeck effect can be obtained with the null charge current. Thus, the chiral dsDNA-based system can act as a spin(charge)-Seebeck diode, spin(charge)-Seebeck switch, and spin(charge)-Seebeck transistor. Our results provide new ways to design spin caloritronic devices based on dsDNA or other organic molecules.

Charge transport properties of intrinsic layer in diamond vertical pin diode

NASA Astrophysics Data System (ADS)

Shimaoka, Takehiro; Kuwabara, Daisuke; Hara, Asuka; Makino, Toshiharu; Tanaka, Manobu; Koizumi, Satoshi

2017-05-01

Diamond is hoped to be utilized in ultimate power electronic devices exhibiting ultra-high blocking voltages. For practical device formation, it is important to characterize the electric properties to precisely simulate carrier transport and to practically design optimum device structures. In this study, we experimentally evaluated the charge transport properties of intrinsic layers in diamond vertical pin diodes using alpha-particle induced charge distribution measurements. The charge collection efficiencies were 98.1 ± 0.6% for a {111} pin diode and 96.9 ± 0.6% for a {100} pin diode, which means that almost all generated charges are collected accordingly equivalent to conventional Silicon pin photodiodes. Mobility-lifetime (μτ) products of holes were (2.2 ± 0.3) × 10-6 cm2/V for {111} and (1.8 ± 0.1) × 10-5 cm2/V for {100} diamond pin diodes.

Improving the Charge Carrier Transport and Suppressing Recombination of Soluble Squaraine-Based Solar Cells via Parallel-Like Structure

PubMed Central

Zhu, Youqin; Liu, Jingli; Zhao, Jiao; Li, Yang; Qiao, Bo; Song, Dandan; Huang, Yan; Xu, Zheng; Zhao, Suling; Xu, Xurong

2018-01-01

Small molecule organic solar cells (SMOSCs) have attracted extensive attention in recent years. Squaraine (SQ) is a kind of small molecule material for potential use in high-efficiency devices, because of its high extinction coefficient and low-cost synthesis. However, the charge carrier mobility of SQ-based film is much lower than other effective materials, which leads to the pretty low fill factor (FF). In this study, we improve the performance of SQ derivative-based solar cells by incorporating PCDTBT into LQ-51/PC71BM host binary blend film. The incorporation of PCDTBT can not only increase the photon harvesting, but also provide an additional hole transport pathway. Through the charge carrier mobility and transient photovoltage measurement, we find that the hole mobility and charge carrier lifetime increase in the ternary system. Also, we carefully demonstrate that the charge carrier transport follows a parallel-like behavior. PMID:29747394

Well-Balanced Ambipolar Conjugated Polymers Featuring Mild Glass Transition Temperatures Toward High-Performance Flexible Field-Effect Transistors.

PubMed

Shi, Keli; Zhang, Weifeng; Gao, Dong; Zhang, Shiying; Lin, Zuzhang; Zou, Ye; Wang, Liping; Yu, Gui

2018-03-01

Conjugated polymers, which can be fabricated by simple processing techniques and possess excellent electrical performance, are key to the fabrication of flexible polymer field-effect transistors (PFETs) and integrated circuits. Herein, two ambipolar conjugated polymers based on (3E,7E)-3,7-bis(2-oxo-1H-pyrrolo[2,3-b]pyridin-3(2H)-ylidene)benzo[1,2-b:4,5-b']difuran-2,6(3H,7H)-dione and dithienylbenzothiadiazole units, namely PNBDOPV-DTBT and PNBDOPV-DTF2BT, are developed. Both copolymers possess almost planar conjugated backbone conformations and suitable highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels (-5.64/-4.38 eV for PNBDOPV-DTBT and -5.79/-4.48 eV for PNBDOPV-DTF2BT). Note that PNBDOPV-DTBT has a glass transition temperature (140 °C) lower than the deformation temperature of polyethylene terephthalate (PET), meaning well-ordered molecular packing can be obtained on PET substrate before its deformation in mild thermal annealing process. Flexible PFETs based on PNBDOPV-DTBT fabricated on PET substrates exhibit high and well-balanced hole/electron mobilities of 4.68/4.72 cm 2 V -1 s -1 under ambient conditions. After the further modification of Au source/drain electrodes with 1-octanethiol self-assembled monolayers, impressively high and well-balanced hole/electron mobilities up to 5.97/7.07 cm 2 V -1 s -1 are achieved in the flexible PFETs. Meanwhile, flexible complementary-like inverters based on PNBDOPV-DTBT on PET substrate also afford a much high gain of 148. The device performances of both the PFETs and inverters are among the highest values for ambipolar conjugated polymers reported to date. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charge transport in electrically doped amorphous organic semiconductors.

PubMed

Yoo, Seung-Jun; Kim, Jang-Joo

2015-06-01

This article reviews recent progress on charge generation by doping and its influence on the carrier mobility in organic semiconductors (OSs). The doping induced charge generation efficiency is generally low in OSs which was explained by the integer charge transfer model and the hybrid charge transfer model. The ionized dopants formed by charge transfer between hosts and dopants can act as Coulomb traps for mobile charges, and the presence of Coulomb traps in OSs broadens the density of states (DOS) in doped organic films. The Coulomb traps strongly reduce the carrier hopping rate and thereby change the carrier mobility, which was confirmed by experiments in recent years. In order to fully understand the doping mechanism in OSs, further quantitative and systematic analyses of charge transport characteristics must be accomplished. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

41 CFR 302-7.200 - How are charges paid and who makes the arrangements for transporting HHG, PBP&E and temporary...

Code of Federal Regulations, 2010 CFR

2010-07-01

... STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E) Actual Expense Method § 302-7.200 How are charges paid and who makes the arrangements for transporting HHG, PBP&E and... who makes the arrangements for transporting HHG, PBP&E and temporary storage under the actual expense...

Analysis of charge transport in gels containing polyoxometallates using methods of different sensitivity to migration.

PubMed

Caban, Karolina; Lewera, Adam; Zukowska, Grazyna Z; Kulesza, Pawel J; Stojek, Zbigniew; Jeffrey, Kenneth R

2006-08-04

Two methods have been used for examination of transport of charge in gels soaked with DMF and containing dissolved polyoxometallates. The first method is based on the analysis of both Cottrellian and steady-state currents and therefore is capable of giving the concentration of the electroactive redox centres and their transport (diffusion-type) coefficient. The second method provides the real diffusion coefficients, i.e. transport coefficients free of migrational influence, for both the substrate and the product of the electrode reaction. Several gels based on poly(methyl methacrylate), with charged (addition of 1-acrylamido-2-methyl-2-propanesulphonic acid to the polymerization mixture) and uncharged chains, have been used in the investigation. The ratio obtained for the diffusion coefficient (second method) and transport coefficient (first method) was smaller for the gels containing charged polymer chains than for the gels with uncharged chains. In part these changes could be explained by the contribution of migration to the transport of polyoxomatallates in the gels. However, the impact of the changes in the polymer-channel capacity at the electrode surface while the electrode process proceeds was also considered. These structural changes should affect differently the methods based on different time domains.

Experimental study of plasma properties in the shadow of the T--10 mushroom limiter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alferov, A.A.; Vershkov, V.A.; Grashin, S.A.

1988-04-01

The plasma properties in the shadow of a mushroom-shaped limiter installed in a lower port of the tokamak have been studied. A study of the asymmetry of the plasma streams on the ion and electron sides of the limiter leads to the conclusion that there are two mechanisms for the occurrence of the asymmetry: the toroidal rotation of the plasma and a predominant escape of plasma to the wall through the outer part of the torus. The asymmetry observed in the plasma floating potentials near the limiter leads to the flow of a current close to the Spitzer value j/submore » S/ through the limiter. With increasing plasma density, the plasma density in the channels of the limiter increases, and the temperature of this plasma decreases, so the loss of charged particles to the limiter depends only weakly on the average density. This circumstance is related to the degradation of the plasma confinement with decreasing density. The total flux of charged particles to the limiter is comparable to the flux of these particles out of the plasma column. The plasma stream into the channels is approximately ambipolar, and the power levels drawn by the neutralization plate are on the order of 10j/sub S/T/sub e//e. The behavior of the neutral gas pressure in the volume near the limiter as a function of the plasma streams into the channels is nonlinear. The maximum pressure is 3x10/sup -2/ torr.« less

Graphene nanoribbon field-effect transistors fabricated by etchant-free transfer from Au(788)

NASA Astrophysics Data System (ADS)

Ohtomo, Manabu; Sekine, Yoshiaki; Hibino, Hiroki; Yamamoto, Hideki

2018-01-01

We report etching-free and iodine-free transfer of highly aligned array of armchair-edge graphene nanoribbons (ACGNRs) and their field-effect transistor (FET) characteristics. They were prepared by on-surface polymerization on Au(788) templates. The ACGNRs were mechanically delaminated and transferred onto insulating substrates with the aid of a nano-porous support layer composed of hydrogen silsesquioxane (HSQ). The key process in the mechanical delamination is the intercalation of octanethiol self-assembled monolayers (SAMs), which penetrate the HSQ layer and intercalate between the ACGNRs and Au(788). After the transfer, the octanethiol SAMs were removed with Piranha solution, enabling the reuse of the Au single crystals. The FETs fabricated with the transferred ACGNR array showed ambipolar behavior when the channel length was as long as 60 nm. Quasi-one-dimensional conductivity was observed, which implies a good alignment of GNRs after the transfer. In contrast, short-channel ACGNR FETs (channel length ˜20 nm) suffer from a geometry-dependent short-channel effect. This effect is more severe in the FETs with ACGNRs parallel to the channel, which is an ideal geometry, than in ones perpendicular to the channel. Since the ID-VD curve is well fitted by the power-law model, the short-channel effect likely stems from the space-charge limited current effect, while the wide charge-transfer region in the GNR channel can be another possible cause for the short-channel effect. These results provide us with important insights into the designing short-channel GNR-FETs with improved performance.

Charge Mobility Enhancement for Conjugated DPP-Selenophene Polymer by Simply Replacing One Bulky Branching Alkyl Chain with Linear One at Each DPP Unit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhijie; Liu, Zitong; Ning, Lu

Here, we demonstrate a simple, but efficient, approach for improving the semiconducting performances of DPP-based conjugated D-A polymers. This approach involves the replacement of one bulky branching alkyl chain with the linear one at each DPP unit in regular polymer PDPPSe-10 and PDPPSe-12. The UV–vis absorption, Raman spectra, PDS data, and theoretical calculations support that the replacement of bulky branching chains with linear ones can weaken the steric hindrance, and accordingly conjugated backbones become more planar and rigid. GIWAXS data show that the incorporation of linear alkyl chains as in PDPPSe-10 and PDPPSe-12 is beneficial for side-chain interdigitation and interchainmore » dense packing, leading to improvement of interchain packing order and thin film crystallinity by comparing with PDPPSe, which contains branching alkyl chains. On the basis of field-effect transistor (FET) studies, charge mobilities of PDPPSe-10 and PDPPSe-12 are remarkably enhanced. Hole mobilities of PDPPSe-10 and PDPPSe-12 in air are boosted to 8.1 and 9.4 cm 2 V –1 s –1, which are about 6 and 7 times, respectively, than that of PDPPSe (1.35 cm 2 V –1 s –1). Furthermore, both PDPPSe-10 and PDPPSe-12 behave as ambipolar semiconductors under a nitrogen atmosphere with increased hole/electron mobilities up to 6.5/0.48 cm 2 V –1 s –1 and 7.9/0.79 cm 2 V –1 s –1, respectively.« less

Charge Mobility Enhancement for Conjugated DPP-Selenophene Polymer by Simply Replacing One Bulky Branching Alkyl Chain with Linear One at Each DPP Unit

DOE PAGES

Wang, Zhijie; Liu, Zitong; Ning, Lu; ...

2018-04-17

Here, we demonstrate a simple, but efficient, approach for improving the semiconducting performances of DPP-based conjugated D-A polymers. This approach involves the replacement of one bulky branching alkyl chain with the linear one at each DPP unit in regular polymer PDPPSe-10 and PDPPSe-12. The UV–vis absorption, Raman spectra, PDS data, and theoretical calculations support that the replacement of bulky branching chains with linear ones can weaken the steric hindrance, and accordingly conjugated backbones become more planar and rigid. GIWAXS data show that the incorporation of linear alkyl chains as in PDPPSe-10 and PDPPSe-12 is beneficial for side-chain interdigitation and interchainmore » dense packing, leading to improvement of interchain packing order and thin film crystallinity by comparing with PDPPSe, which contains branching alkyl chains. On the basis of field-effect transistor (FET) studies, charge mobilities of PDPPSe-10 and PDPPSe-12 are remarkably enhanced. Hole mobilities of PDPPSe-10 and PDPPSe-12 in air are boosted to 8.1 and 9.4 cm 2 V –1 s –1, which are about 6 and 7 times, respectively, than that of PDPPSe (1.35 cm 2 V –1 s –1). Furthermore, both PDPPSe-10 and PDPPSe-12 behave as ambipolar semiconductors under a nitrogen atmosphere with increased hole/electron mobilities up to 6.5/0.48 cm 2 V –1 s –1 and 7.9/0.79 cm 2 V –1 s –1, respectively.« less

A Protocol for Electrochemical Evaluations and State of Charge Diagnostics of a Symmetric Organic Redox Flow Battery.

PubMed

Duan, Wentao; Vemuri, Rama S; Hu, Dehong; Yang, Zheng; Wei, Xiaoliang

2017-02-13

Redox flow batteries have been considered as one of the most promising stationary energy storage solutions for improving the reliability of the power grid and deployment of renewable energy technologies. Among the many flow battery chemistries, non-aqueous flow batteries have the potential to achieve high energy density because of the broad voltage windows of non-aqueous electrolytes. However, significant technical hurdles exist currently limiting non-aqueous flow batteries to demonstrate their full potential, such as low redox concentrations, low operating currents, under-explored battery status monitoring, etc. In an attempt to address these limitations, we recently reported a non-aqueous flow battery based on a highly soluble, redox-active organic nitronyl nitroxide radical compound, 2-phenyl-4,4,5,5-tetramethylimidazoline-1-oxyl-3-oxide (PTIO). This redox material exhibits an ambipolar electrochemical property, and therefore can serve as both anolyte and catholyte redox materials to form a symmetric flow battery chemistry. Moreover, we demonstrated that Fourier transform infrared (FTIR) spectroscopy could measure the PTIO concentrations during the PTIO flow battery cycling and offer reasonably accurate detection of the battery state of charge (SOC), as cross-validated by electron spin resonance (ESR) measurements. Herein we present a video protocol for the electrochemical evaluation and SOC diagnosis of the PTIO symmetric flow battery. With a detailed description, we experimentally demonstrated the route to achieve such purposes. This protocol aims to spark more interests and insights on the safety and reliability in the field of non-aqueous redox flow batteries.

Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties

NASA Astrophysics Data System (ADS)

Blokhin, A. M.; Kruglova, E. A.; Semisalov, B. V.

2018-03-01

The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.

Giant electron-hole transport asymmetry in ultra-short quantum transistors.

PubMed

McRae, A C; Tayari, V; Porter, J M; Champagne, A R

2017-05-31

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e-h charging energy asymmetry). We parameterize the e-h transport asymmetry by the ratio of the hole and electron charging energies η e-h . This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, η e-h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

Charge transport in liquid crystalline smectic and discotic organic semiconductors: New results and experimental methodologies

NASA Astrophysics Data System (ADS)

Paul, Sanjoy

Organic electronics offer the possibility of producing low cost, flexible, and large area electronics. Organic semiconductors (OSCs) (organic polymers and crystals), used in organic electronics, are promising materials for novel optical and electronic devices such as organic light emitting diodes, organic field effect transistors, organic sensors, and organic photovoltaics (OPVs). OSCs are composed of molecules weakly held together via van der Walls forces rather than covalent bonds as in the case of inorganic semiconductors such as Si. The combined effect of small wave function overlap, spatial and energetic disorder in organic semiconducting materials lead to localization of charge carriers and, in many cases, hopping conduction. OSCs also differ from conventional semiconductors in that charges photogeneration (e.g., in OPVs) proceeds via the production, diffusion, and dissociation of excitons. Liquid crystalline OSCs (LCOSCs) are semiconductors with phases intermediate between the highly ordered crystalline and completely disordered liquid phases. These materials offer many advantages including facile alignment and the opportunity to study the effects of differing intermolecular geometries on transfer integrals, disorder-induced trapping, charge mobilities, and photogeneration efficiency. In this dissertation work, we explored the photogeneration and charge transport mechanisms in a few model smectic and discotic LCs to better understand the governing principles of photogeneration and charge transport using conventional and novel methods based on the pulsed laser time-of-flight charge carrier transport technique. Four major interrelated topics were considered in this research. First, a sample of smectic LC was aligned in order to compare the resulting hole mobility to that of an unaligned sample, with the aim of understanding how the intermolecular alignment over large length scales affects the hopping probability. The role of the polarization of the photogenerating light was also explored in the context of these anisotropic systems. Next, the photogeneration and charge transport was investigated as a function of temperature, electric field, the wavelength and intensity of photogenerating light. Different exciton dissociation interfaces between the electrode and the LC to probe the details of the mechanism of excitonic dissociation (e.g., surface mediated generation vs. exciton-exciton fusion) were explored. Next, we have also developed a new method of spatially resolving the photogeneration and transport mechanisms in inhomogeneous OSCs called "scanning time of flight microscopy (STOFm)" which simultaneously obtains 2d images of transport coefficients and polarized transmittance. The STOFm was extensively used to study charge transport in various structured semiconductors: smectics, discotics, as well as in phase separated LC/polymer structures. Finally, this work involves characterization and analysis of transport in a number of new phenyl-naphthalene LC OSCs.

Rapid Substrate-Induced Charge Movements of the GABA Transporter GAT1

PubMed Central

Bicho, Ana; Grewer, Christof

2005-01-01

The GABA transporter GAT1 removes the neurotransmitter GABA from the synaptic cleft by coupling of GABA uptake to the co-transport of two sodium ions and one chloride ion. The aim of this work was to investigate the individual reaction steps of GAT1 after a GABA concentration jump. GAT1 was transiently expressed in HEK293 cells and its pre-steady-state kinetics were studied by combining the patch-clamp technique with the laser-pulse photolysis of caged GABA, which allowed us to generate GABA concentration jumps within <100 μs. Recordings of transport currents generated by GAT1, both in forward and exchange transport modes, showed multiple charge movements that can be separated along the time axis. The individual reactions associated with these charge movements differ from the well-characterized electrogenic “sodium-occlusion” reaction by GAT1. One of the observed electrogenic reactions is shown to be associated with the GABA-translocating half-cycle of the transporter, in contradiction to previous studies that showed no charge movements associated with these reactions. Interestingly, reactions of the GABA-bound transporter were not affected by the absence of extracellular chloride, suggesting that Cl− may not be co-translocated with GABA. Based on the results, a new alternating access sequential-binding model is proposed for GAT1's transport cycle that describes the results presented here and those by others. PMID:15849242

Dichotomy between the band and hopping transport in organic crystals: insights from experiments.

PubMed

Yavuz, I

2017-10-04

The molecular understanding of charge-transport in organic crystals has often been tangled with identifying the true dynamical origin. While in two distinct cases where complete delocalization and localization of charge-carriers are associated with band-like and hopping-like transports, respectively, their possible coalescence poses some mystery. Moreover, the existing models are still controversial at ambient temperatures. Here, we review the issues in charge-transport theories of organic materials and then provide an overview of prominent transport models. We explored ∼60 organic crystals, the single-crystal hole/electron mobilities of which have been predicted by band-like and hopping-like transport models, separately. Our comparative results show that at room-temperature neither of the models are exclusively capable of accurately predicting mobilities in a very broad range. Hopping-like models well-predict experimental mobilities around μ ∼ 1 cm 2 V -1 s -1 but systematically diverge at high mobilities. Similarly, band-like models are good at μ > ∼50 cm 2 V -1 s -1 but systematically diverge at lower mobilities. These results suggest the development of a unique and robust room-temperature transport model incorporating a mixture of these two extreme cases, whose relative importance is associated with their predominant regions. We deduce that while band models are beneficial for rationally designing high mobility organic-semiconductors, hopping models are good to elucidate the charge-transport of most organic-semiconductors.

Charge-spin Transport in Surface-disordered Three-dimensional Topological Insulators

NASA Astrophysics Data System (ADS)

Peng, Xingyue

As one of the most promising candidates for the building block of the novel spintronic circuit, the topological insulator (TI) has attracted world-wide interest of study. Robust topological order protected by time-reversal symmetry (TRS) makes charge transport and spin generation in TIs significantly different from traditional three-dimensional (3D) or two-dimensional (2D) electronic systems. However, to date, charge transport and spin generation in 3D TIs are still primarily modeled as single-surface phenomena, happening independently on top and bottom surfaces. In this dissertation, I will demonstrate via both experimental findings and theoretical modeling that this "single surface'' theory neither correctly describes a realistic 3D TI-based device nor reveals the amazingly distinct physical picture of spin transport dynamics in 3D TIs. Instead, I present a new viewpoint of the spin transport dynamics where the role of the insulating yet topologically non-trivial bulk of a 3D TI becomes explicit. Within this new theory, many mysterious transport and magneto-transport anomalies can be naturally explained. The 3D TI system turns out to be more similar to its low dimensional sibling--2D TI rather than some other systems sharing the Dirac dispersion, such as graphene. This work not only provides valuable fundamental physical insights on charge-spin transport in 3D TIs, but also offers important guidance to the design of 3D TI-based spintronic devices.

Ambipolar zinc-polyiodide electrolyte for a high-energy density aqueous redox flow battery

DOE PAGES

Li, Bin; Nie, Zimin; Vijayakumar, M.; ...

2015-02-24

Large-scale energy storage systems are crucial for substantial deployment of renewable energy sources. Energy storage systems with high energy density, high safety, and low cost and environmental friendliness are desired. To overcome the major limitations of the current aqueous redox flow battery systems, namely lower energy density (~25 Wh L -1) and presence of strong acids and/or other hazardous, a high energy density aqueous zinc/polyiodide flow battery (ZIB) is designed with near neutral ZnI 2 solutions as catholytes. The energy density of ZIB could reach 322 Wh L -1 at the solubility limit of ZnI 2 in water (~7 M).more » We demonstrate charge and discharge energy densities of 245.9 Wh/L and 166.7 Wh L-1 with ZnI 2 electrolyte at 5.0 M, respectively. The addition of ethanol (EtOH) in ZnI 2 electrolyte can effectively mitigate the growth of zinc dendrite at the anode and improve the stability of catholytes with wider temperature window (-20 to 50°C), which enable ZIB system to be a promising alternative as a high-energy and high- safety stationary energy storage system.« less

PdSe 2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oyedele, Akinola D.; Yang, Shize; Liang, Liangbo

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe 2, exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from ~0 (bulk) to ~1.3 eV (monolayer). The Raman active vibrational modes of PdSe 2 were identified using polarizedmore » Raman spectroscopy, and the strong interlayer interaction was revealed from the large thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe 2 display tunable ambipolar charge carrier conduction with a high electron apparent field-effect mobility of ~158 cm 2V -1s -1, indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.« less

PdSe 2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

DOE PAGES

Oyedele, Akinola D.; Yang, Shize; Liang, Liangbo; ...

2017-09-05

Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe 2, exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from ~0 (bulk) to ~1.3 eV (monolayer). The Raman active vibrational modes of PdSe 2 were identified using polarizedmore » Raman spectroscopy, and the strong interlayer interaction was revealed from the large thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe 2 display tunable ambipolar charge carrier conduction with a high electron apparent field-effect mobility of ~158 cm 2V -1s -1, indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.« less

The frequency dependence of the discharge properties in a capacitively coupled oxygen discharge

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Snorrason, D. I.; Hannesdottir, H.

2018-02-01

We use the one-dimensional object-oriented particle-in-cell Monte Carlo collision code oopd1 to explore the evolution of the charged particle density profiles, electron heating mechanism, the electron energy probability function (EEPF), and the ion energy distribution in a single frequency capacitively coupled oxygen discharge, with driving frequency in the range 12-100 MHz. At a low driving frequency and low pressure (5 and 10 mTorr), a combination of stochastic (α-mode) and drift ambipolar (DA) heating in the bulk plasma (the electronegative core) is observed and the DA-mode dominates the time averaged electron heating. As the driving frequency or pressure are increased, the heating mode transitions into a pure α-mode, where electron heating in the sheath region dominates. At low pressure (5 and 10 mTorr), this transition coincides with a sharp decrease in electronegativity. At low pressure and low driving frequency, the EEPF is concave. As the driving frequency is increased, the number of low energy electrons increases and the relative number of higher energy electrons (>10 eV) increases. At high driving frequency, the EEPF develops a convex shape or becomes bi-Maxwellian.

Polymers for electronics and spintronics.

PubMed

Bujak, Piotr; Kulszewicz-Bajer, Irena; Zagorska, Malgorzata; Maurel, Vincent; Wielgus, Ireneusz; Pron, Adam

2013-12-07

This critical review is devoted to semiconducting and high spin polymers which are of great scientific interest in view of further development of the organic electronics and the emerging organic spintronic fields. Diversified synthetic strategies are discussed in detail leading to high molecular mass compounds showing appropriate redox (ionization potential (IP), electron affinity (EA)), electronic (charge carrier mobility, conductivity), optoelectronic (electroluminescence, photoconductivity) and magnetic (magnetization, ferromagnetic spin interactions) properties and used as active components of devices such as n- and p-channel field effect transistors, ambipolar light emitting transistors, light emitting diodes, photovoltaic cells, photodiodes, magnetic photoswitches, etc. Solution processing procedures developed with the goal of depositing highly ordered and oriented films of these polymers are also described. This is completed by the description of principal methods that are used for characterizing these macromolecular compounds both in solution and in the solid state. These involve various spectroscopic methods (UV-vis-NIR, UPS, pulse EPR), electrochemistry and spectroelectrochemistry, magnetic measurements (SQUID), and structural and morphological investigations (X-ray diffraction, STM, AFM). Finally, four classes of polymers are discussed in detail with special emphasis on the results obtained in the past three years: (i) high IP, (ii) high |EA|, (iii) low band gap and (iv) high spin ones.

A multichannel model for the self-consistent analysis of coherent transport in graphene nanoribbons.

PubMed

Mencarelli, Davide; Pierantoni, Luca; Farina, Marco; Di Donato, Andrea; Rozzi, Tullio

2011-08-23

In this contribution, we analyze the multichannel coherent transport in graphene nanoribbons (GNRs) by a scattering matrix approach. We consider the transport properties of GNR devices of a very general form, involving multiple bands and multiple leads. The 2D quantum transport over the whole GNR surface, described by the Schrödinger equation, is strongly nonlinear as it implies calculation of self-generated and externally applied electrostatic potentials, solutions of the 3D Poisson equation. The surface charge density is computed as a balance of carriers traveling through the channel at all of the allowed energies. Moreover, formation of bound charges corresponding to a discrete modal spectrum is observed and included in the model. We provide simulation examples by considering GNR configurations typical for transistor devices and GNR protrusions that find an interesting application as cold cathodes for X-ray generation. With reference to the latter case, a unified model is required in order to couple charge transport and charge emission. However, to a first approximation, these could be considered as independent problems, as in the example. © 2011 American Chemical Society

Femtosecond x rays link melting of charge-density wave correlations and light-enhanced coherent transport in YB a 2 C u 3 O 6.6

DOE Office of Scientific and Technical Information (OSTI.GOV)

Först, M.; Frano, A.; Kaiser, S.

2014-11-17

In this study, we use femtosecond resonant soft x-ray diffraction to measure the optically stimulated ultrafast changes of charge density wave correlations in underdoped YBa₂Cu₃O₆.₆. We find that when coherent interlayer transport is enhanced by optical excitation of the apical oxygen distortions, at least 50% of the in-plane charge density wave order is melted. These results indicate that charge ordering and superconductivity may be competing up to the charge ordering transition temperature, with the latter becoming a hidden phase that is accessible only by nonlinear phonon excitation.

Prompt Ion Outflows and Artificial Ducts during High-Power HF Heating at HAARP: Effect of Suprathermal Electrons?

NASA Astrophysics Data System (ADS)

Mishin, E. V.; Milikh, G. M.

2014-12-01

In situ observations from the DMSP and Demeter satellites established that high-power HF heating of the ionosphere F-region results in significant ion outflows associated with 10-30% density enhancements in the topside ionosphere magnetically-conjugate to the heated region. As follows from the SAMI2 two-fluid model calculations, their formation time should exceed 5-7 minutes. However, specially designed DMSP-HAARP experiments have shown that artificial ducts and ion outflows appear on the topside within 2 minutes. We describe the results of these observations and present a semi-quantitative explanation of the fast timescale due to suprathermal electrons accelerated by HF-induced plasma turbulence. There are two possible effects of suprathermal electrons: (1) the increase of the ambipolar electric field over the usual thermal ambipolar diffusion and (2) excitation of heat flux-driven plasma instability resulting in an anomalous electron-ion momentum exchange. Both effects result in faster upward ion flows.

Ambipolar light-emitting organic single-crystal transistors with a grating resonator

PubMed Central

Maruyama, Kenichi; Sawabe, Kosuke; Sakanoue, Tomo; Li, Jinpeng; Takahashi, Wataru; Hotta, Shu; Iwasa, Yoshihiro; Takenobu, Taishi

2015-01-01

Electrically driven organic lasers are among the best lasing devices due to their rich variety of emission colors as well as other advantages, including printability, flexibility, and stretchability. However, electrically driven lasing in organic materials has not yet been demonstrated because of serious luminescent efficiency roll-off under high current density. Recently, we found that the organic ambipolar single-crystal transistor is an excellent candidate for lasing devices because it exhibits less efficient roll-off, high current density, and high luminescent efficiency. Although a single-mode resonator combined with light-emitting transistors (LETs) is necessary for electrically driven lasing devices, the fragility of organic crystals has strictly limited the fabrication of resonators, and LETs with optical cavities have never been fabricated until now. To achieve this goal, we improved the soft ultraviolet-nanoimprint lithography method and demonstrated electroluminescence from a single-crystal LET with a grating resonator, which is a crucial milestone for future organic lasers. PMID:25959455

Photoelectrochemical processes in organic semiconductor: Ambipolar perylene diimide thin film

NASA Astrophysics Data System (ADS)

Kim, Jung Yong; Chung, In Jae

2018-03-01

A thin film of N,N‧-dioctadecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C18) is spin-coated on indium tin oxide (ITO) glass. Using the PTCDI-C18/ITO electrode, we fabricate a photoelectrochemical cell with the ITO/PTCDI-C18/Redox Electrolyte/Pt configuration. The electrochemical properties of this device are investigated as a function of hydroquinone (HQ) concentration, bias voltage, and wavelength of light. Anodic photocurrent is observed at V ≥ -0.2 V vs. Ag/AgCl, indicating that the PTCDI-C18 film acts as an n-type semiconductor as usual. However, when benzoquinone (BQ) is inserted into the electrolyte system instead of HQ, cathodic photocurrent is observed at V ≤ 0.0 V, displaying that PTCDI-C18 abnormally serves as a p-type semiconductor. Hence the overall results reveal that the PTCDI-C18 film can be an ambipolar functional semiconductor depending on the redox couple in the appropriate voltage.

Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering

NASA Astrophysics Data System (ADS)

Cui, Ning; Liang, Renrong; Wang, Jing; Xu, Jun

2012-06-01

Choosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs). In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the channel. According to this interpretation, we present a new concept of energy band profile modulation (BPM) achieved with gate structure engineering. It is believed that this approach can be used to suppress the ambipolar effect. Based on this method, a Si TFET device with a symmetrical tri-material-gate (TMG) structure is proposed. Two-dimensional numerical simulations demonstrated that the special band profile in this device can boost on-state performance, and it also suppresses the off-state current induced by the ambipolar effect. These unique advantages are maintained over a wide range of gate lengths and supply voltages. The BPM concept can serve as a guideline for improving the performance of nanoscale TFET devices.

Kinetic modeling of the Saturn ring-ionosphere plasma environment

NASA Technical Reports Server (NTRS)

Wilson, G. R.; Waite, J. H., Jr.

1989-01-01

A time-independent kinetic plasma model was developed on the basis of the Li et al. (1988) semikinetic plasma model and was used to study the interaction of the Saturnian ionosphere and ring plasma. The model includes the gravitational magnetic mirror and centripetal and ambipolar electric forces, and the effect of the mixing of two plasma populations. The results obtained indicate that the density, temperature, and composition of plasma near the rings changing in the direction from the inner C ring to the outer A ring, due to the fact that the predominant source of plasma changes from the ionosphere to the rings. The model results also suggest that the outflow of hydrogen from the ionosphere to the rings may be shut off for field lines passing through the outer B and A ring, due to the ambipolar electric field set up by the warm ring plasma trapped near the ring plane by the centipetal force. In these regions, there will be a net flux of O(+) ions from the rings to the ionosphere.

Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

DOEpatents

Hershkowitz, Noah [Madison, WI; Longmier, Benjamin [Madison, WI; Baalrud, Scott [Madison, WI

2009-03-03

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

The Electric Wind of Venus: A Global and Persistent Polar Wind -Like Ambipolar Electric Field Sufficient for the Direct Escape of Heavy Ionospheric Ions

NASA Technical Reports Server (NTRS)

Collinson, Glyn A.; Frahm, Rudy A.; Glocer, Alex; Coates, Andrew J.; Grebowsky, Joseph M.; Barabash, Stas; Domagal-Goldman, Shawn D.; Federov, Andrei; Futaana, Yoshifumi; Gilbert, Lin K.;

Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

NASA Technical Reports Server (NTRS)

Hershkowitz, Noah (Inventor); Longmier, Benjamin (Inventor); Baalrud, Scott (Inventor)

2011-01-01

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

NASA Technical Reports Server (NTRS)

Hershkowitz, Noah (Inventor); Longmier, Benjamin (Inventor); Baalrud, Scott (Inventor)

2009-01-01

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahedo, Eduardo; Merino, Mario

A previous axisymmetric model of the supersonic expansion of a collisionless, hot plasma in a divergent magnetic nozzle is extended here in order to include electron-inertia effects. Up to dominant order on all components of the electron velocity, electron momentum equations still reduce to three conservation laws. Electron inertia leads to outward electron separation from the magnetic streamtubes. The progressive plasma filling of the adjacent vacuum region is consistent with electron-inertia being part of finite electron Larmor radius effects, which increase downstream and eventually demagnetize the plasma. Current ambipolarity is not fulfilled and ion separation can be either outwards ormore » inwards of magnetic streamtubes, depending on their magnetization. Electron separation penalizes slightly the plume efficiency and is larger for plasma beams injected with large pressure gradients. An alternative nonzero electron-inertia model [E. Hooper, J. Propul. Power 9, 757 (1993)] based on cold plasmas and current ambipolarity, which predicts inwards electron separation, is discussed critically. A possible competition of the gyroviscous force with electron-inertia effects is commented briefly.« less

Surface charge- and space-dependent transport of proteins in crowded environments of nanotailored posts.

PubMed

Choi, Chang Kyoung; Fowlkes, Jason D; Retterer, Scott T; Siuti, Piro; Iyer, Sukanya; Doktycz, Mitchel J

2010-06-22

The reaction and diffusion of molecules across barriers and through crowded environments is integral to biological system function and to separation technologies. Ordered, microfabricated post arrays are a promising route to creating synthetic barriers with controlled chemical and physical characteristics. They can be used to create crowded environments, to mimic aspects of cellular membranes, and to serve as engineered replacements of polymer-based separation media. Here, the translational diffusion of fluorescein isothiocyante and various forms of green fluorescent protein (GFP), including "supercharged" variants, are examined in a silicon-based post array environment. The technique of fluorescence recovery after photobleaching (FRAP) is combined with analytical approximations and numerical simulations to assess the relative effects of reaction and diffusion on molecular transport, respectively. FRAP experiments were conducted for 64 different cases where the molecular species, the density of the posts, and the chemical surface charge of the posts were varied. In all cases, the dense packing of the posts hindered the diffusive transport of the fluorescent species. The supercharged GFPs strongly interacted with oppositely charged surfaces. With similar molecular and surface charges, transport is primarily limited by hindered diffusion. For conventional, enhanced GFP in a positively charged surface environment, transport was limited by the coupled action of hindered diffusion and surface interaction with the posts. Quantification of the size-, space-, time-, and charge-dependent translational diffusion in the post array environments can provide insight into natural processes and guide the design and development of selective membrane systems.

Influence of electromagnetic field on soliton-mediated charge transport in biological systems.

PubMed

Brizhik, Larissa

2015-01-01

It is shown that electromagnetic fields affect dynamics of Davydov's solitons which provide charge transport processes in macromolecules during metabolism of the system. There is a resonant frequency of the field at which it can cause the transition of electrons from bound soliton states into delocalised states. Such decay of solitons reduces the effectiveness of charge transport, and, therefore, inhibits redox processes. Solitons radiate their own electromagnetic field of characteristic frequency determined by their average velocity. This self-radiated field leads to synchronization of soliton dynamics and charge transport processes, and is the source of the coherence in the system. Exposition of the system to the oscillating electromagnetic field of the frequency, which coincides with the eigen-frequency of solitons can enhance eigen-radiation of solitons, and, therefore, will enhance synchronization of charge transpor, stimulate the redox processes and increase coherence in the system. Electromagnetic oscillating field causes also ratchet phenomenon of solitons, i.e., drift of solitons in macromolecules in the presence of unbiased periodic field. Such additional drift enhances the charge transport processes. It is shown that temperature facilitates the ratchet drift. In particular, temperature fluctuations lead to the lowering of the critical value of the intensity and period of the field, above which the drift of solitons takes place. Moreover, there is a stochastic resonance in the soliton dynamics in external electromagnetic fields. This means, that there is some optimal temperature at which the drift of solitons is maximal.

Chain conformations dictate multiscale charge transport phenomena in disordered semiconducting polymers

PubMed Central

Noriega, Rodrigo; Salleo, Alberto; Spakowitz, Andrew J.

2013-01-01

Existing models for the electronic properties of conjugated polymers do not capture the spatial arrangement of the disordered macromolecular chains over which charge transport occurs. Here, we present an analytical and computational description in which the morphology of individual polymer chains is dictated by well-known statistical models and the electronic coupling between units is determined using Marcus theory. The multiscale transport of charges in these materials (high mobility at short length scales, low mobility at long length scales) is naturally described with our framework. Additionally, the dependence of mobility with electric field and temperature is explained in terms of conformational variability and spatial correlation. Our model offers a predictive approach to connecting processing conditions with transport behavior. PMID:24062459

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.

PubMed

Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

2016-11-25

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

Chain conformations dictate multiscale charge transport phenomena in disordered semiconducting polymers.

PubMed

Noriega, Rodrigo; Salleo, Alberto; Spakowitz, Andrew J

2013-10-08

Existing models for the electronic properties of conjugated polymers do not capture the spatial arrangement of the disordered macromolecular chains over which charge transport occurs. Here, we present an analytical and computational description in which the morphology of individual polymer chains is dictated by well-known statistical models and the electronic coupling between units is determined using Marcus theory. The multiscale transport of charges in these materials (high mobility at short length scales, low mobility at long length scales) is naturally described with our framework. Additionally, the dependence of mobility with electric field and temperature is explained in terms of conformational variability and spatial correlation. Our model offers a predictive approach to connecting processing conditions with transport behavior.

Microscopic origins of charge transport in triphenylene systems

NASA Astrophysics Data System (ADS)

Thompson, Ian R.; Coe, Mary K.; Walker, Alison B.; Ricci, Matteo; Roscioni, Otello M.; Zannoni, Claudio

2018-06-01

We study the effects of molecular ordering on charge transport at the mesoscale level in a layer of ≈9000 hexa-octyl-thio-triphenylene discotic mesogens with dimensions of ≈20 ×20 ×60 nm3 . Ordered (columnar) and disordered isotropic morphologies are obtained from a combination of atomistic and coarse-grained molecular-dynamics simulations. Electronic structure codes are used to find charge hopping rates at the microscopic level. Energetic disorder is included through the Thole model. Kinetic Monte Carlo simulations then predict charge mobilities. We reproduce the large increase in mobility in going from an isotropic to a columnar morphology. To understand how these mobilities depend on the morphology and hopping rates, we employ graph theory to analyze charge trajectories by representing the film as a charge-transport network. This approach allows us to identify spatial correlations of molecule pairs with high transfer rates. These pairs must be linked to ensure good transport characteristics or may otherwise act as traps. Our analysis is straightforward to implement and will be a useful tool in linking materials to device performance, for example, to investigate the influence of local inhomogeneities in the current density. Our mobility-field curves show an increasing mobility with field, as would be expected for an organic semiconductor.

Regional Market, Industry, and Transportation Impacts of Waterway User Charges

DOT National Transportation Integrated Search

1977-08-01

The objective of the report is to analyze the impacts on water-served economic markets and water transportation of the imposition of user charges designed to recover Federal outlays for the operation, maintenance, and repair of the U.S. waterways and...

14 CFR 158.3 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-01-01

...-for-the-price-of-one” and similar marketing programs, or to air transportation purchased for a... employees or others receiving air transportation against whom token service charges are levied are considered nonrevenue passengers. Infants for whom a token fare is charged are also considered nonrevenue...

Latitudinal distribution of the Jovian plasma sheet ions observed by Juno JADE-I

NASA Astrophysics Data System (ADS)

Kim, T. K. H.; Valek, P. W.; McComas, D. J.; Allegrini, F.; Bagenal, F.; Bolton, S. J.; Connerney, J. E. P.; Ebert, R. W.; Levin, S.; Louarn, P.; Pollock, C. J.; Ranquist, D. A.; Szalay, J.; Thomsen, M. F.; Wilson, R. J.

2017-12-01

The Jovian plasma sheet is a region where the centrifugal force dominates the heavy ion plasma. Properties of the plasma sheet ions near the equatorial plane have been studied with in-situ measurements from the Pioneer, Voyager, and Galileo spacecraft. However, the ion properties for the off-equator regions are not well known due to the limited measurements. Juno is the first polar orbiting spacecraft that can investigate the high latitude region of the Jovian magnetosphere. With Juno's unique trajectory, we will investigate the latitudinal distribution of the Jovian plasma sheet ions using measurements from the Jovian Auroral Distributions Experiment Ion sensor (JADE-I). JADE-I measures an ion's energy-per-charge (E/Q) from 0.01 keV/q to 46.2 keV/q with an electrostatic analyzer (ESA) and a mass-per-charge (M/Q) up to 64 amu/q with a carbon-foil-based time-of-flight (TOF) mass spectrometer. We have shown that the ambiguity between and (both have M/Q of 16) can be resolved in JADE-I using a semi-empirical simulation tool based on carbon foil effects (i.e., charge state modification, angular scattering, and energy loss) from incident ions passing through the TOF mass spectrometer. Based on the simulation results, we have developed an Ion Composition Analysis Tool (ICAT) that determines ion composition at each energy step of JADE-I (total of 64 steps). The velocity distribution for each ion species can be obtained from the ion composition as a function of each energy step. Since there is an ambipolar electric field due to mobile electrons and equatorially confined heavy ions, we expect to see acceleration along the field line. This study will show the species separated velocity distribution at various latitudes to investigate how the plasma sheet ions evolve along the field line.

Anomalous-hydrodynamic analysis of charge-dependent elliptic flow in heavy-ion collisions

NASA Astrophysics Data System (ADS)

Hongo, Masaru; Hirono, Yuji; Hirano, Tetsufumi

2017-12-01

Anomalous hydrodynamics is a low-energy effective theory that captures effects of quantum anomalies. We develop a numerical code of ideal anomalous hydrodynamics and apply it to dynamics of heavy-ion collisions, where anomalous transports are expected to occur. We discuss implications of the simulations for possible experimental observations of anomalous transport effects. From analyses of the charge-dependent elliptic flow parameters (v2±) as a function of the net charge asymmetry A±, we find that the linear dependence of Δ v2± ≡ v2- - v2+ on the net charge asymmetry A± can come from a mechanism unrelated to anomalous transport effects. Instead, we find that a finite intercept Δ v2± (A± = 0) can come from anomalous effects.

48 CFR 847.303-70 - F.o.b. origin, freight prepaid, transportation charges to be included on the invoice.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 48 Federal Acquisition Regulations System 5 2012-10-01 2012-10-01 false F.o.b. origin, freight... Transportation in Supply Contracts 847.303-70 F.o.b. origin, freight prepaid, transportation charges to be... shipping cost, if the shipped parcel weighs 70 pounds or less and does not exceed 108 inches in length and...

48 CFR 847.303-70 - F.o.b. origin, freight prepaid, transportation charges to be included on the invoice.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 48 Federal Acquisition Regulations System 5 2011-10-01 2011-10-01 false F.o.b. origin, freight... Transportation in Supply Contracts 847.303-70 F.o.b. origin, freight prepaid, transportation charges to be... shipping cost, if the shipped parcel weighs 70 pounds or less and does not exceed 108 inches in length and...

48 CFR 847.303-70 - F.o.b. origin, freight prepaid, transportation charges to be included on the invoice.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 48 Federal Acquisition Regulations System 5 2013-10-01 2013-10-01 false F.o.b. origin, freight... Transportation in Supply Contracts 847.303-70 F.o.b. origin, freight prepaid, transportation charges to be... shipping cost, if the shipped parcel weighs 70 pounds or less and does not exceed 108 inches in length and...

48 CFR 847.303-70 - F.o.b. origin, freight prepaid, transportation charges to be included on the invoice.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 48 Federal Acquisition Regulations System 5 2014-10-01 2014-10-01 false F.o.b. origin, freight... Transportation in Supply Contracts 847.303-70 F.o.b. origin, freight prepaid, transportation charges to be... shipping cost, if the shipped parcel weighs 70 pounds or less and does not exceed 108 inches in length and...

Generalized Breit-Wigner treatment of molecular transport: Charging effects in a single decanedithiol molecule

NASA Astrophysics Data System (ADS)

Cabrera-Tinoco, Hugo Andres; Moreira, Augusto C. L.; de Melo, Celso P.

2018-05-01

We examine the relative contribution of ballistic and elastic cotunneling mechanisms to the charge transport through a single decanedithiol molecule linked to two terminal clusters of gold atoms. For this, we first introduced a conceptual model that permits a generalization of the Breit-Wigner scattering formalism where the cation, anion, and neutral forms of the molecule can participate with different probabilities of the charge transfer process, but in a simultaneous manner. We used a density functional theory treatment and considered the fixed geometry of each charge state to calculate the corresponding eigenvalues and eigenvectors of the extended system for different values of the external electric field. We have found that for the ballistic transport the HOMO and LUMO of the neutral species play a key role, while the charged states give a negligible contribution. On the other hand, an elastic cotunneling charge transfer can occur whenever a molecular orbital (MO) of the cation or anion species, even if localized in just one side of the molecule-gold clusters complex, has energy close to that of a delocalized MO of the neutral species. Under these conditions, a conduction channel is formed throughout the entire system, in a process that is controlled by the degree of resonance between the MOs involved. Our results indicate that while different charge transfer mechanisms contribute to the overall charge transport, quantum effects such as avoided-crossing situations between relevant frontier MOs can be of special importance. In these specific situations, the interchange of spatial localization of two MOs involved in the crossing can open a new channel of charge transfer that otherwise would not be available.

Dynamic tuning of optical absorbers for accelerated solar-thermal energy storage.

PubMed

Wang, Zhongyong; Tong, Zhen; Ye, Qinxian; Hu, Hang; Nie, Xiao; Yan, Chen; Shang, Wen; Song, Chengyi; Wu, Jianbo; Wang, Jun; Bao, Hua; Tao, Peng; Deng, Tao

2017-11-14

Currently, solar-thermal energy storage within phase-change materials relies on adding high thermal-conductivity fillers to improve the thermal-diffusion-based charging rate, which often leads to limited enhancement of charging speed and sacrificed energy storage capacity. Here we report the exploration of a magnetically enhanced photon-transport-based charging approach, which enables the dynamic tuning of the distribution of optical absorbers dispersed within phase-change materials, to simultaneously achieve fast charging rates, large phase-change enthalpy, and high solar-thermal energy conversion efficiency. Compared with conventional thermal charging, the optical charging strategy improves the charging rate by more than 270% and triples the amount of overall stored thermal energy. This superior performance results from the distinct step-by-step photon-transport charging mechanism and the increased latent heat storage through magnetic manipulation of the dynamic distribution of optical absorbers.

Functional interactions between arginine-133 and aspartate-88 in the human reduced folate carrier: evidence for a charge-pair association.

PubMed Central

Liu, X Y; Matherly, L H

2001-01-01

The human reduced folate carrier (hRFC) is an integral membrane protein that mediates cellular uptake of reduced folates and antifolates. hRFC contains several highly conserved charged residues predicted to lie in the transmembrane domains (TMDs). To explore the possible roles of the conserved arginine-133, located in TMD 4, in hRFC structure and function, this residue was systematically mutagenized to histidine, leucine, lysine and glutamate. When transfected into transport-impaired K562 cells, the mutant hRFC constructs were expressed at high levels; however, only lysine-133 hRFC was able to transport methotrexate and (6S)-5-formyl tetrahydrofolate. Substitution of aspartate-453 (in hRFC TMD 12) by valine largely preserved transport activity for both substrates. Although mutagenesis of aspartate-88 (in TMD 2) to leucine completely abolished transport activity in transfected cells, substitution with a glutamate preserved low levels ( approximately 12%) of transport. To assess the possibility that arginine-133 and aspartate-88 may form a charge-pair to stabilize hRFC tertiary structure, both charges were neutralized (by substituting leucine and valine, respectively) in the same construct. In contrast to the singly mutated hRFCs, the double mutant exhibited high levels of transport with both methotrexate and 5-formyl tetrahydrofolate. These results strongly suggest that arginine-133 and aspartate-88 form a charge-pair and that TMD 4 lies next to TMD 2 in the hRFC tertiary structure. PMID:11513752

Correction: The effect of recombination under short-circuit conditions on the determination of charge transport properties in nanostructured photoelectrodes.

PubMed

Villanueva-Cab, J; Anta, J A; Oskam, G

2016-05-28

Correction for 'The effect of recombination under short-circuit conditions on the determination of charge transport properties in nanostructured photoelectrodes' by J. Villanueva-Cab et al., Phys. Chem. Chem. Phys., 2016, 18, 2303-2308.

Photocurrent in Multilayered Assemblies of Porphyrin-Fullerene Covalent Dyads: Evidence for Channels for Charge Transport.

PubMed

Konev, Alexander S; Khlebnikov, Alexander F; Levin, Oleg V; Lukyanov, Daniil A; Zorin, Ivan M

2016-04-07

Specially designed porphyrin-fullerene dyads have been synthesized to verify literature predictions based on quantum chemistry calculations that certain porphyrin-fullerene dyads are able to self-arrange into specific structures providing channels for charge transport in a bulk mass of organic compound. According to AFM and SEM data, the newly synthesized compounds were indeed prone to some kind of self-arrangement, although to a lesser degree than was expected. A dispersion corrected DFT study of the molecular non-covalent interactions performed at the DFT-D3 (B3LYP, 6-31G*) level of theory showed that the least energy corresponded to head-to-head dimers, with close contacts of porphyrin-porphyrin and fullerene-fullerene fragments, thus providing a unit building block of the channel for charge transport. Experimental proof for the existence of channels for charge transport was obtained by observing a photocurrent in a simple photovoltaic cell. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Assessment of the Electrification of the Road Transport Sector on Net System Emissions

NASA Astrophysics Data System (ADS)

Miller, James

As worldwide environmental consciousness grows, electric vehicles (EVs) are becoming more common and despite the incredible potential for emissions reduction, the net emissions of the power system supply side plus the transportation system are dependent on the generation matrix. Current EV charging patterns tend to correspond directly with the peak consumption hours and have the potential to increase demand sharply allowing for only a small penetration of Electric Vehicles. Using the National Household Travel Survey (NHTS) data a model is created for vehicle travel patterns using trip chaining. Charging schemes are modeled to include uncontrolled residential, uncontrolled residential/industrial charging, optimized charging and optimized charging with vehicle to grid discharging. A charging profile is then determined based upon the assumption that electric vehicles would directly replace a percentage of standard petroleum-fueled vehicles in a known system. Using the generation profile for the specified region, a unit commitment model is created to establish not only the generation dispatch, but also the net CO2 profile for variable EV penetrations and charging profiles. This model is then used to assess the impact of the electrification of the road transport sector on the system net emissions.

How to harvest solar energy with the photosynthetic reaction center

NASA Astrophysics Data System (ADS)

Balaeff, Alexander; Reyes, Justin

Photosynthetic reaction center (PRC) is a protein complex that performs a key step in photosynthesis: the electron-hole separation driven by photon absorbtion. The PRC has a great promise for applications in solar energy harvesting and photosensing. Such applications, however, are hampered by the difficulty in extracting the photogenerated electric charge from the PRC. To that end, it was proposed to attach the PRC to a molecular wire through which the charge could be collected. In order to find the attachment point for the wire that would maximize the rate of charge outflow from the PRC, we performed a computational study of the PRC from the R. virdis bacterium. An ensemble of PRC structures generated by a molecular dynamics simulation was used to calculate the rate of charge transport from the site of initial charge separation to several trial sites on the protein surface. The Pathways model was used to calculate the charge transfer rate in each step of the network of heme co-factors through which the charge transport was presumed to proceed. A simple kinetic model was then used to determine the overall rate of the multistep charge transport. The calculations revealed several candidate sites for the molecular wire attachment, recommended for experimental verification.

Charge Generation Dynamics in Efficient All-Polymer Solar Cells: Influence of Polymer Packing and Morphology.

PubMed

Gautam, Bhoj R; Lee, Changyeon; Younts, Robert; Lee, Wonho; Danilov, Evgeny; Kim, Bumjoon J; Gundogdu, Kenan

2015-12-23

All-polymer solar cells exhibit rapid progress in power conversion efficiency (PCE) from 2 to 7.7% over the past few years. While this improvement is primarily attributed to efficient charge transport and balanced mobility between the carriers, not much is known about the charge generation dynamics in these systems. Here we measured exciton relaxation and charge separation dynamics using ultrafast spectroscopy in polymer/polymer blends with different molecular packing and morphology. These measurements indicate that preferential face-on configuration with intermixed nanomorphology increases the charge generation efficiency. In fact, there is a direct quantitative correlation between the free charge population in the ultrafast time scales and the external quantum efficiency, suggesting not only the transport but also charge generation is key for the design of high performance all polymer solar cells.

Electrical sensing of the dynamical structure of the planetary boundary layer

NASA Astrophysics Data System (ADS)

Nicoll, K. A.; Harrison, R. G.; Silva, H. G.; Salgado, R.; Melgâo, M.; Bortoli, D.

2018-04-01

Turbulent and convective processes within the planetary boundary layer are responsible for the transport of moisture, momentum and particulate matter, but are also important in determining the electrical charge transport of the lower atmosphere. This paper presents the first high resolution vertical charge profiles during fair weather conditions, obtained with instrumented radiosonde balloons over Alqueva, Portugal during the summer of 2014. The short intervals (4 h) between balloon flights enabled the diurnal variation in the vertical profile of charge within the boundary layer to be examined in detail, with much smaller charges (up to 20 pC m- 3) observed during stable night time periods than during the day. Following sunrise, the evolution of the charge profile was complex, demonstrating charged ultrafine aerosol, lofted upwards by daytime convection. This produced charge up to 92 pC m- 3 up to 500 m above the surface. The diurnal variation in the integrated column of charge above the site tracked closely with the diurnal variation in near surface charge as derived from a nearby electric field sensor, confirming the importance of the link between surface charge generation processes and aloft. The local aerosol vertical profiles were estimated using backscatter measurements from a collocated ceilometer. These were utilised in a simple model to calculate the charge expected due to vertical conduction current flow in the global electric circuit through aerosol layers. The analysis presented here demonstrates that charge can provide detailed information about boundary layer transport, particularly in regard to the ultrafine aerosol structure, that conventional thermodynamic and ceilometer measurements do not.

Ion transport in a pH-regulated nanopore.

PubMed

Yeh, Li-Hsien; Zhang, Mingkan; Qian, Shizhi

2013-08-06

Fundamental understanding of ion transport phenomena in nanopores is crucial for designing the next-generation nanofluidic devices. Due to surface reactions of dissociable functional groups on the nanopore wall, the surface charge density highly depends upon the proton concentration on the nanopore wall, which in turn affects the electrokinetic transport of ions, fluid, and particles within the nanopore. Electrokinetic ion transport in a pH-regulated nanopore, taking into account both multiple ionic species and charge regulation on the nanopore wall, is theoretically investigated for the first time. The model is verified by the experimental data of nanopore conductance available in the literature. The results demonstrate that the spatial distribution of the surface charge density at the nanopore wall and the resulting ion transport phenomena, such as ion concentration polarization (ICP), ion selectivity, and conductance, are significantly affected by the background solution properties, such as the pH and salt concentration.

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

NASA Astrophysics Data System (ADS)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

Understanding charge transport in lead iodide perovskite thin-film field-effect transistors

PubMed Central

Senanayak, Satyaprasad P.; Yang, Bingyan; Thomas, Tudor H.; Giesbrecht, Nadja; Huang, Wenchao; Gann, Eliot; Nair, Bhaskaran; Goedel, Karl; Guha, Suchi; Moya, Xavier; McNeill, Christopher R.; Docampo, Pablo; Sadhanala, Aditya; Friend, Richard H.; Sirringhaus, Henning

2017-01-01

Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+ cations, and thermal vibrations of the lead halide inorganic cages. PMID:28138550

Investigating anomalous transport of electrolytes in charged porous media

NASA Astrophysics Data System (ADS)

Skjøde Bolet, Asger Johannes; Mathiesen, Joachim

2017-04-01

Surface charge is know to play an important role in microfluidics devices when dealing with electrolytes and their transport properties. Similarly, surface charge could play a role for transport in porous rock with submicron pore sizes. Estimates of the streaming potentials and electro osmotic are mostly considered in simple geometries both using analytic and numerical tools, however it is unclear at present how realistic complex geometries will modify the dynamics. Our work have focused on doing numerical studies of the full three-dimensional Stokes-Poisson-Nernst-Planck problem for electrolyte transport in porous rock. As the numerical implementation, we have used a finite element solver made using the FEniCS project code base, which can both solve for a steady state configuration and the full transient. In the presentation, we will show our results on anomalous transport due to electro kinetic effects such as the streaming potential or the electro osmotic effect.

Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.

PubMed

Gritsenko, Vladimir A; Perevalov, Timofey V; Voronkovskii, Vitalii A; Gismatulin, Andrei A; Kruchinin, Vladimir N; Aliev, Vladimir Sh; Pustovarov, Vladimir A; Prosvirin, Igor P; Roizin, Yakov

2018-01-31

Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaO x films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaO x by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaO x conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaO x films is phonon-assisted tunneling between the traps.

Prediction and Experimental Evidence for Thermodynamically Stable Charged Orbital Domain Walls

DOE PAGES

Li, Qing’an; Gray, K. E.; Wilkins, S. B.; ...

2014-08-18

On theoretical grounds, we show that orbital domain walls (ODWs), which are known to exist in the charge and orbital ordered layered manganite LaSr 2Mn 2O 7, should be partially charged as a result of competition between orbital-induced strain and Coulomb repulsion. Furthermore, this unexpected result provides the necessary condition for the known thermodynamic stability of these ODWs, which are unlike the more typical domain walls that arise only from an external field. We offer experimental data consistent with this theoretical framework through a combined transport and x-ray-diffraction study. In particular, our transport data on this charge and orbital orderedmore » manganite exhibit abrupt transformations to higher conductance at a threshold electric field. As transport phenomena closely resemble effects found for sliding charge-density waves (SCDWs) in pseudo-one-dimensional (1D) materials, a SCDW along such pseudo-1D ODWs provides a natural explanation of our data. Importantly, x-ray-diffraction data eliminate heating and melting of charge order as tenable alternative explanations of our data.« less

Surface-charge-governed electrolyte transport in carbon nanotubes

NASA Astrophysics Data System (ADS)

Xue, Jian-Ming; Guo, Peng; Sheng, Qian

2015-08-01

The transport behavior of pressure-driven aqueous electrolyte solution through charged carbon nanotubes (CNTs) is studied by using molecular dynamics simulations. The results reveal that the presence of charges around the nanotube can remarkably reduce the flow velocity as well as the slip length of the aqueous solution, and the decreasing of magnitude depends on the number of surface charges and distribution. With 1-M KCl solution inside the carbon nanotube, the slip length decreases from 110 nm to only 14 nm when the number of surface charges increases from 0 to 12 e. This phenomenon is attributed to the increase of the solid-liquid friction force due to the electrostatic interaction between the charges and the electrolyte particles, which can impede the transports of water molecules and electrolyte ions. With the simulation results, we estimate the energy conversion efficiency of nanofluidic battery based on CNTs, and find that the highest efficiency is only around 30% but not 60% as expected in previous work. Project supported by the National Natural Science Foundation of China (Grant Nos. 11375031 and 11335003).

A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

NASA Astrophysics Data System (ADS)

Bauer, Thilo; Jäger, Christof M.; Jordan, Meredith J. T.; Clark, Timothy

2015-07-01

We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.

A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bauer, Thilo; Jäger, Christof M.; Jordan, Meredith J. T.

2015-07-28

We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localizemore » charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.« less

Measurement of charge transport through organic semiconducting devices

NASA Astrophysics Data System (ADS)

Klenkler, Richard A.

2007-12-01

In this thesis, two important and unexplored areas of organic semiconductor device physics are investigated: The first area involves determining the effect of energy barriers and intermixing at the interfaces between hole transport layers (HTLs). This effect was discerned by first establishing a method of pressure-laminating successive solution coated HTLs to gether. It was found that in the range of 0.8--3.0 MPa a pressure-laminated interface between two identical HTLs causes no measurable perturbation to charge transport. By this method, 2 different HTLs can be sandwiched together to create a discrete interface, and by inserting a mixed HTL in the middle an intermixed interface between the 2 HTLs can be simulated. With these sandwiched devices, charge injection across discrete versus intermixed interfaces were compared using time-of-flight measurements. For the hole transport materials investigated, no perturbation to the overall charge transport was observed with the discrete interface, however in contrast the rate of charge transport was clearly reduced through the intermixed interface. The second area that was investigated pertains to the development of a bulk mobility measurement technique that has a higher resolution than existing methods. The approach that was used involved decoupling the charge carrier transient signal from the device charging circuit. With this approach, the RC time constant constraint that limits the resolution of existing methods is eliminated. The resulting method, termed the photoinduced electroluminescence (EL) mobility measurement technique, was then used to compare the electron mobility of the metal chelate, AlQ3 to that of the novel triazine material, BTB. Results showed that BTB demonstrated an order of magnitude higher mobility than AlQ3. Overall, these findings have broad implications regarding device design. The pressure-lamination method could be used, e.g., as a diagnostic tool to help in the design of multilayer xerographic photoreceptors, such as those that include an abrasion resistant overcoat. Further, the photoinduced EL technique could be use as a tool to help characterize charge flow and balance in organic light emitting devices amongst others.

A numerical study on the charge transport in TPD/Alq3-based organic light emitting diodes.

PubMed

Kim, K S; Hwang, Y W; Lee, H G; Won, T Y

2014-08-01

We report our simulation study on the charge transport characteristic of the multi-layer structure for organic light emitting diodes (OLEDs). We performed a numerical simulation on a multilayer structure comprising a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL) between both electrodes. The material of the HTL is TPD (N,N'-Bis (3-methylphenyl)-N,N'-bis(phenyl) benzidine), and the ETL includes Alq3 (Tris (8-hyroxyquinolinato) aluminium). Here, we investigated the parameters such as recombination rates which influence the efficiency of the charge transport between layers in bilayer OLEDs. We also analyzed a transient response during the turn on/off period and the carrier transport in accordance with the variation of the injection barrier and applied voltage. In addition, our numerical simulation revealed that the insertion of the EML affects the photonic characteristics in bilayer structure and also the efficiency due to the difference in the internal barrier height.

Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

PubMed Central

Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M.

2016-01-01

We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

Simulating Donnan equilibria based on the Nernst-Planck equation

NASA Astrophysics Data System (ADS)

Gimmi, Thomas; Alt-Epping, Peter

2018-07-01

Understanding ion transport through clays and clay membranes is important for many geochemical and environmental applications. Ion transport is affected by electrostatic forces exerted by charged clay surfaces. Anions are partly excluded from pore water near these surfaces, whereas cations are enriched. Such effects can be modeled by the Donnan approach. Here we introduce a new, comparatively simple way to represent Donnan equilibria in transport simulations. We include charged surfaces as immobile ions in the balance equation and calculate coupled transport of all components, including the immobile charges, with the Nernst-Planck equation. This results in an additional diffusion potential that influences ion transport, leading to Donnan ion distributions while maintaining local charge balance. The validity of our new approach was demonstrated by comparing Nernst-Planck simulations using the reactive transport code Flotran with analytical solutions available for simple Donnan systems. Attention has to be paid to the numerical evaluation of the electrochemical migration term in the Nernst-Planck equation to obtain correct results for asymmetric electrolytes. Sensitivity simulations demonstrate the influence of various Donnan model parameters on simulated anion accessible porosities. It is furthermore shown that the salt diffusion coefficient in a Donnan pore depends on local concentrations, in contrast to the aqueous salt diffusion coefficient. Our approach can be easily implemented into other transport codes. It is versatile and facilitates, for instance, assessing the implications of different activity models for the Donnan porosity.

Electronic structure and charge transport in nonstoichiometric tantalum oxide

NASA Astrophysics Data System (ADS)

Perevalov, T. V.; Gritsenko, V. A.; Gismatulin, A. A.; Voronkovskii, V. A.; Gerasimova, A. K.; Aliev, V. Sh; Prosvirin, I. A.

2018-06-01

The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaO x<2.5 grown by ion beam sputtering deposition was studied. The TaO x film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaO x is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaO x from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaO x were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

23 CFR 810.212 - Use to be without charge.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 23 Highways 1 2010-04-01 2010-04-01 false Use to be without charge. 810.212 Section 810.212 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION PUBLIC TRANSPORTATION MASS TRANSIT AND SPECIAL USE HIGHWAY PROJECTS Making Highway Rights-of-Way Available for Mass Transit Projects...

The feasibility of charging private vehicles an airport drop-off and pick-up charge.

DOT National Transportation Integrated Search

2016-01-01

As transportation network companies (TNCs) like Uber and Lyft drive a change in modern transport behaviors, fewer passengers pay for services such as parking or commercial vehicle drop-off at airports, meaning that what once was a primary revenue sou...

Carbon materials for enhancing charge transport in the advancements of perovskite solar cells

NASA Astrophysics Data System (ADS)

Hu, Ruiyuan; Chu, Liang; Zhang, Jian; Li, Xing'ao; Huang, Wei

2017-09-01

Organic-inorganic halide perovskite solar cells (PSCs) have become a new favorite in the photovoltaic field, due to the boosted efficiency up to 22.1%. Despite a flow of achievements, there are certain challenges to simultaneously meet high efficiency, large scale, low cost and high stability. Due to the low cost, extensive sources, high electrical conductivity and chemical stability, carbon materials have made undeniable contributions to play positive roles in developing PSCs. Carbon materials not only have the favorable conductivity but also bipolar advantage, which can transfer both electrons and holes. In this review, we will discuss how the carbon materials transfer charge or accelerate charge transport by incorporation in PSCs. Carbon materials can replace transparent conductive oxide layers, and enhance electron transport in electron transport layers. Moreover, carbon materials with continuous structure, especially carbon nanotubes and graphene, can provide direct charge transport channel that make them suitable additives or even substitutes in hole transport layers. Especially, the successful application of carbon materials as counter electrodes makes the devices full-printable, low temperature and high stability. Finally, a brief outlook is provided on the future development of carbon materials for PSCs, which are expected to devote more contributions in the future photovoltaic market.

Implementation of polarization processes in a charge transport model applied on poly(ethylene naphthalate) films

NASA Astrophysics Data System (ADS)

Hoang, M.-Q.; Le Roy, S.; Boudou, L.; Teyssedre, G.

2016-06-01

One of the difficulties in unravelling transport processes in electrically insulating materials is the fact that the response, notably charging current transients, can have mixed contributions from orientation polarization and from space charge processes. This work aims at identifying and characterizing the polarization processes in a polar polymer in the time and frequency-domains and to implement the contribution of the polarization into a charge transport model. To do so, Alternate Polarization Current (APC) and Dielectric Spectroscopy measurements have been performed on poly(ethylene naphthalene 2,6-dicarboxylate) (PEN), an aromatic polar polymer, providing information on polarization mechanisms in the time- and frequency-domain, respectively. In the frequency-domain, PEN exhibits 3 relaxation processes termed β, β* (sub-glass transitions), and α relaxations (glass transition) in increasing order of temperature. Conduction was also detected at high temperatures. Dielectric responses were treated using a simplified version of the Havriliak-Negami model (Cole-Cole (CC) model), using 3 parameters per relaxation process, these parameters being temperature dependent. The time dependent polarization obtained from the CC model is then added to a charge transport model. Simulated currents issued from the transport model implemented with the polarization are compared with the measured APCs, showing a good consistency between experiments and simulations in a situation where the response comes essentially from dipolar processes.

Giant electron-hole transport asymmetry in ultra-short quantum transistors

PubMed Central

McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

2017-01-01

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

Review of heavy charged particle transport in MCNP6.2

NASA Astrophysics Data System (ADS)

Zieb, K.; Hughes, H. G.; James, M. R.; Xu, X. G.

2018-04-01

The release of version 6.2 of the MCNP6 radiation transport code is imminent. To complement the newest release, a summary of the heavy charged particle physics models used in the 1 MeV to 1 GeV energy regime is presented. Several changes have been introduced into the charged particle physics models since the merger of the MCNP5 and MCNPX codes into MCNP6. This paper discusses the default models used in MCNP6 for continuous energy loss, energy straggling, and angular scattering of heavy charged particles. Explanations of the physics models' theories are included as well.

Review of Heavy Charged Particle Transport in MCNP6.2

DOE PAGES

Zieb, Kristofer James Ekhart; Hughes, Henry Grady III; Xu, X. George; ...

2018-01-05

The release of version 6.2 of the MCNP6 radiation transport code is imminent. To complement the newest release, a summary of the heavy charged particle physics models used in the 1 MeV to 1 GeV energy regime is presented. Several changes have been introduced into the charged particle physics models since the merger of the MCNP5 and MCNPX codes into MCNP6. Here, this article discusses the default models used in MCNP6 for continuous energy loss, energy straggling, and angular scattering of heavy charged particles. Explanations of the physics models’ theories are included as well.

Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility

NASA Astrophysics Data System (ADS)

Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

2008-09-01

Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters.

Flywheel-Based Fast Charging Station - FFCS for Electric Vehicles and Public Transportation

NASA Astrophysics Data System (ADS)

Gabbar, Hossam A.; Othman, Ahmed M.

2017-08-01

This paper demonstrates novel Flywheel-based Fast Charging Station (FFCS) for high performance and profitable charging infrastructures for public electric buses. The design criteria will be provided for fast charging stations. The station would support the private and open charging framework. Flywheel Energy storage system is utilized to offer advanced energy storage for charging stations to achieve clean public transportation, including electric buses with reducing GHG, including CO2 emission reduction. The integrated modelling and management system in the station is performed by a decision-based control platform that coordinates the power streams between the quick chargers, the flywheel storage framework, photovoltaic cells and the network association. There is a tidy exchange up between the capacity rate of flywheel framework and the power rating of the network association.”

Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility.

PubMed

Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

2008-09-07

Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters.

Charge transport study in bis{2-(2-hydroxyphenyl) benzoxazolate} zinc [Zn(hpb)2

NASA Astrophysics Data System (ADS)

Rai, Virendra Kumar; Srivastava, Ritu; Chauhan, Gayatri; Kumar, Arunandan; Kamalasanan, M. N.

2008-10-01

The nature of the electrical transport mechanism for carrier transport in pure bis {2-(2-hydroxyphenyl) benzoxazolate} zinc [Zn(hpb)2] has been studied by current voltage measurements of samples at different thicknesses and at different temperatures. Hole-only devices show ohmic conduction at low voltages and space charge conduction at high voltages. The space charge conduction is clearly identifiable with a square law dependence of current on voltage as well as the scaling of current inversely with the cube of thickness. With a further increase in voltage, the current increases with a Vm dependence with m varying with temperature typical of trap limited conduction with an exponential distribution of trap states. From the square law region the effective charge carrier mobility of holes has been evaluated as 2.5 × 10-11 m2 V-1 s-1. Electron-only devices however show electrode limited conduction, which was found to obey the Scott Malliaras model of charge injection.

Different electronic and charge-transport properties of four organic semiconductors Tetraazaperopyrenes derivatives

NASA Astrophysics Data System (ADS)

Shi, Yarui; Wei, Huiling; Liu, Yufang

2015-03-01

Tetraazaperopyrenes (TAPPs) derivatives are high-performance n-type organic semiconductor material families with the remarkable long-term stabilities. The charge carrier mobilities in TAPPs derivatives crystals were calculated by the density functional theory (DFT) method combined with the Marcus-Hush electron-transfer theory. The existence of considerable C-H…F-C bonding defines the conformation of the molecular structure and contributes to its stability. We illustrated how it is possible to control the electronic and charge-transport parameters of TAPPs derivatives as a function of the positions, a type of the substituents. It is found that the core substitution of TAPPs has a drastic influence on the charge-transport mobilities. The maximum electron mobility value of the core-brominated 2,9-bis (perfluoroalkyl)-substituted TAPPs is 0.521 cm2 V-1 s-1, which appear in the orientation angle 95° and 275°. The results demonstrate that the TAPPs with bromine substituents in ortho positions exhibit the best charge-transfer efficiency among the four different TAPP derivatives.

Dominant source of disorder in graphene: charged impurities or ripples?

NASA Astrophysics Data System (ADS)

Fan, Zheyong; Uppstu, Andreas; Harju, Ari

2017-06-01

Experimentally produced graphene sheets exhibit a wide range of mobility values. Both extrinsic charged impurities and intrinsic ripples (corrugations) have been suggested to induce long-range disorder in graphene and could be a candidate for the dominant source of disorder. Here, using large-scale molecular dynamics and quantum transport simulations, we find that the hopping disorder and the gauge and scalar potentials induced by the ripples are short-ranged, in strong contrast with predictions by continuous models, and the transport fingerprints of the ripple disorder are very different from those of charged impurities. We conclude that charged impurities are the dominant source of disorder in most graphene samples, whereas scattering by ripples is mainly relevant in the high carrier density limit of ultraclean graphene samples (with a charged impurity concentration less than about 10 ppm) at room and higher temperatures. Our finding is valuable to theoretical modelling of transport properties of not only graphene, but also other two-dimensional materials, as the thermal ripples are universal.

Dynamics of charged viscous dissipative cylindrical collapse with full causal approach

NASA Astrophysics Data System (ADS)

Shah, S. M.; Abbas, G.

2017-11-01

The aim of this paper is to investigate the dynamical aspects of a charged viscous cylindrical source by using the Misner approach. To this end, we have considered the more general charged dissipative fluid enclosed by the cylindrical symmetric spacetime. The dissipative nature of the source is due to the presence of dissipative variables in the stress-energy tensor. The dynamical equations resulting from such charged cylindrical dissipative source have been coupled with the causal transport equations for heat flux, shear and bulk viscosity, in the context of the Israel-Steward theory. In this case, we have the considered Israel-Steward transportation equations without excluding the thermodynamics viscous/heat coupling coefficients. The results are compared with the previous works in which such coefficients were excluded and viscosity variables do not satisfy the casual transportation equations.

Enhanced charge transport and photovoltaic performance of PBDTTT-C-T/PC70BM solar cells via UV-ozone treatment.

PubMed

Adhikary, Prajwal; Venkatesan, Swaminathan; Adhikari, Nirmal; Maharjan, Purna P; Adebanjo, Olusegun; Chen, Jihua; Qiao, Qiquan

2013-10-21

In this work, the electron transport layer of PBDTTT-C-T/PC70BM polymer solar cells were subjected to UV-ozone treatment, leading to improved cell performances from 6.46% to 8.34%. The solar cell efficiency reached a maximum of 8.34% after an optimal 5 minute UV-ozone treatment, and then decreased if treated for a longer time. To the best of our knowledge, the mechanism behind the effects of UV-ozone treatment on the improvement of charge transport and cell performance is not fully understood. We have developed a fundamental understanding of the UV-ozone treatment mechanism, which explains both the enhancements in charge transport and photovoltaic performance at an optimal treatment time, and also the phenomenon whereby further treatment time leads to a drop in cell efficiency. Transient photocurrent measurements indicated that the cell charge transport times were 1370 ns, 770 ns, 832 ns, 867 ns, and 1150 ns for the 0 min, 5 min, 10 min, 15 min, and 20 min UV-ozone treatment times, respectively. Therefore the 5 min UV-ozone treatment time led to the shortest transport time and the most efficient charge transport in the cells. The 5 min UV-ozone treated sample exhibited the highest peak intensity (E2) in the Raman spectra of the treated films, at about 437 cm(-1), indicating that it possessed the best wurtzite phase crystallinity of the ZnO films. Further increasing the UV-ozone treatment time from 5 to 20 min induced the formation of p-type defects (e.g. interstitial oxygen atoms), pushing the ZnO Fermi-level further away from the vacuum level, and decreasing the wurtzite crystallinity.

Secondary electron generation, emission and transport: Effects on spacecraft charging and NASCAP models

NASA Technical Reports Server (NTRS)

Katz, Ira; Mandell, Myron; Roche, James C.; Purvis, Carolyn

1987-01-01

Secondary electrons control a spacecraft's response to a plasma environment. To accurately simulate spacecraft charging, the NASA Charging Analyzer Program (NASCAP) has mathematical models of the generation, emission and transport of secondary electrons. The importance of each of the processes and the physical basis for each of the NASCAP models are discussed. Calculations are presented which show that the NASCAP formulations are in good agreement with both laboratory and space experiments.

Designing New Materials for Converting Solar Energy to Fuels via Quantum Mechanics

DTIC Science & Technology

2014-07-11

dopants can also be exploited to increase charge carrier concentration without creating traps and hence improve the conductivity of these materials...e.g., Mn(II) in hematite for hole transport, Y(III) in MnO:ZnO for electron transport). • We discovered that dopants derived from covalent oxides...e.g., Si from silica, as a dopant in hematite) can also be used to increase charge carrier density without creating traps. Charge carriers stay

48 CFR 52.247-36 - F.a.s. Vessel, Port of Shipment.

Code of Federal Regulations, 2012 CFR

2012-10-01

... transportation in conformance with carrier requirements to protect the goods and to ensure assessment of the lowest applicable transportation charge; (2)(i) Deliver the shipment in good order and condition... or within the period specified in the contract; and (ii) Pay and bear all applicable charges...

48 CFR 52.247-36 - F.a.s. Vessel, Port of Shipment.

Code of Federal Regulations, 2013 CFR

2013-10-01

... transportation in conformance with carrier requirements to protect the goods and to ensure assessment of the lowest applicable transportation charge; (2)(i) Deliver the shipment in good order and condition... or within the period specified in the contract; and (ii) Pay and bear all applicable charges...

48 CFR 52.247-36 - F.a.s. Vessel, Port of Shipment.

Code of Federal Regulations, 2010 CFR

2010-10-01

... transportation in conformance with carrier requirements to protect the goods and to ensure assessment of the lowest applicable transportation charge; (2)(i) Deliver the shipment in good order and condition... or within the period specified in the contract; and (ii) Pay and bear all applicable charges...

48 CFR 52.247-36 - F.a.s. Vessel, Port of Shipment.

Code of Federal Regulations, 2011 CFR

2011-10-01

... transportation in conformance with carrier requirements to protect the goods and to ensure assessment of the lowest applicable transportation charge; (2)(i) Deliver the shipment in good order and condition... or within the period specified in the contract; and (ii) Pay and bear all applicable charges...

48 CFR 52.247-36 - F.a.s. Vessel, Port of Shipment.

Code of Federal Regulations, 2014 CFR

2014-10-01

... transportation in conformance with carrier requirements to protect the goods and to ensure assessment of the lowest applicable transportation charge; (2)(i) Deliver the shipment in good order and condition... or within the period specified in the contract; and (ii) Pay and bear all applicable charges...

The effect of radio-frequency self bias on ion acceleration in expanding argon plasmas in helicon sources

NASA Astrophysics Data System (ADS)

Wiebold, Matthew D.

Time-averaged plasma potential differences up to ˜ 165 V over several hundred Debye lengths are observed in low pressure (pn < 1 mTorr) expanding argon plasmas in the Madison Helicon Experiment. The potential gradient leads to ion acceleration exceeding Ei ≈ 7 kTe in some cases. Up to 1 kW of 13.56 MHz RF power is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field up to 1 kG. An RPA measures the IEDF and an emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in electron density as RF power is increased. In the capacitive mode, large fluctuations of the plasma potential (Vp--p ≳ 140 V, Vp--p/Vp ≈ 150%) exist at the RF frequency, leading to formation of a self-bias voltage. The mobile electrons can flow from the upstream region during an RF cycle whereas ions cannot, leading to an initial imbalance of flux, and the self-bias voltage builds as a result. The plasma potential in the expansion chamber is held near the floating potential for argon (Vp ≈ 5kTe/e). In the capacitive mode, the ion acceleration is not well described by an ambipolar relation. The accelerated population decay is consistent with that predicted by charge-exchange collisions. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate. In the inductive and helicon modes, the ion acceleration more closely follows an ambipolar relation, a result of decreased capacitive coupling due to the decreased RF skin depth. The scaling of the potential gradient with the argon flow rate, magnetic field and RF power are investigated, with the highest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees well with that predicted for RF sheaths. Use of the self-bias effect in a plasma thruster is explored, possibly for a low thrust, high specific impulse mode in a multi-mode helicon thruster. This work could also explain similar potential gradients in expanding helicon plasmas that are ascribed to double layer formation in the literature.

Theoretical studies of optics and charge transport in organic conducting oligomers and polymers: Rational design of improved transparent and conducting polymers

NASA Astrophysics Data System (ADS)

Hutchison, Geoffrey Rogers

Theoretical studies on a variety of oligo- and polyheterocycles elucidate their optical and charge transport properties, suggesting new, improved transparent conductive polymers. First-principles calculations provide accurate methodologies for predicting both optical band gaps of neutral and cationic oligomers and intrinsic charge transfer rates. Multidimensional analysis reveals important motifs in chemical tailorability of oligoheterocycle optical and charge transport properties. The results suggest new directions for design of novel materials. Using both finite oligomer and infinite polymer calculations, the optical band gaps in polyheterocycles follow a modified particle-in-a-box formalism, scaling approximately as 1/N (where N is the number of monomer units) in short chains, saturating for long chains. Calculations demonstrate that band structure changes upon heteroatom substitution, (e.g., from polythiophene to polypyrrole) derive from heteroatom electron affinity. Further investigation of chemical variability in substituted oligoheterocycles using multidimensional statistics reveals the interplay between heteroatom and substituent in correlations between structure and redox/optical properties of neutral and cationic species. A linear correlation between band gaps of neutral and cationic species upon oxidation of conjugated oligomers, shows redshifts of optical absorption for most species and blueshifts for small band gap species. Interstrand charge-transport studies focus on two contributors to hopping-style charge transfer rates: internal reorganization energy and the electronic coupling matrix element. Statistical analysis of chemical variability of reorganization energies in oligoheterocycles proves the importance of reorganization energy in determining intrinsic charge transfer rates (e.g., charge mobility in unsubstituted oligothiophenes). Computed bandwidths across several oligothiophene crystal packing motifs show similar electron and hole bandwidths, and show that well-known tilted and herringbone motifs in oligothiophenes are driven by electrostatic repulsion. Tilted stacks exhibit intrinsic charge-transfer rates smaller than cofacial stacks, but with lower packing energy. Given similar electron and hole bandwidths, a charge injection model explains substitution-modulated majority carrier changes in n- and p-type oligothiophene field-effect transistors.

Charge transport in metal oxide nanocrystal-based materials

NASA Astrophysics Data System (ADS)

Runnerstrom, Evan Lars

There is probably no class of materials more varied, more widely used, or more ubiquitous than metal oxides. Depending on their composition, metal oxides can exhibit almost any number of properties. Of particular interest are the ways in which charge is transported in metal oxides: devices such as displays, touch screens, and smart windows rely on the ability of certain metal oxides to conduct electricity while maintaining visible transparency. Smart windows, fuel cells, and other electrochemical devices additionally rely on efficient transport of ionic charge in and around metal oxides. Colloidal synthesis has enabled metal oxide nanocrystals to emerge as a relatively new but highly tunable class of materials. Certain metal oxide nanocrystals, particularly highly doped metal oxides, have been enjoying rapid development in the last decade. As in myriad other materials systems, structure dictates the properties of metal oxide nanocrystals, but a full understanding of how nanocrystal synthesis, the processing of nanocrystal-based materials, and the structure of nanocrystals relate to the resulting properties of nanocrystal-based materials is still nascent. Gaining a fundamental understanding of and control over these structure-property relationships is crucial to developing a holistic understanding of metal oxide nanocrystals. The unique ability to tune metal oxide nanocrystals by changing composition through the introduction of dopants or by changing size and shape affords a way to study the interplay between structure, processing, and properties. This overall goal of this work is to chemically synthesize colloidal metal oxide nanocrystals, process them into useful materials, characterize charge transport in materials based on colloidal metal oxide nanocrystals, and develop ways to manipulate charge transport. In particular, this dissertation characterizes how the charge transport properties of metal oxide nanocrystal-based materials depend on their processing and structure. Charge transport can obviously be taken to mean the conduction of electrons, but it also refers to the motion of ions, such as lithium ions and protons. In many cases, the transport of ions is married to the motion of electrons as well, either through an external electrical circuit, or within the same material in the case of mixed ionic electronic conductors. The collective motion of electrons over short length scales, that is, within single nanocrystals, is also a subject of study as it pertains to plasmonic nanocrystals. Finally, charge transport can also be coupled to or result from the formation of defects in metal oxides. All of these modes of charge transport in metal oxides gain further complexity when considered in nanocrystalline systems, where the introduction of numerous surfaces can change the character of charge transport relative to bulk systems, providing opportunities to exploit new physical phenomena. Part I of this dissertation explores the combination of electronic and ionic transport in electrochromic devices based on nanocrystals. Colloidal chemistry and solution processing are used to fabricate nanocomposites based on electrochromic tin-doped indium oxide (ITO) nanocrystals. The nanocomposites, which are completely synthesized using solution processing, consist of ITO nanocrystals and lithium bis(trifluoromethylsulfonyl)amide (LiTFSI) salt dispersed in a lithium ion-conducting polymer matrix of either poly(ethylene oxide) (PEO) or poly(methyl methacrylate) (PMMA). ITO nanocrystals are prepared by colloidal synthetic methods and the nanocrystal surface chemistry is modified to achieve favorable nanocrystal-polymer interactions. Homogeneous solutions containing polymer, ITO nanocrystals, and lithium salt are thus prepared and deposited by spin casting. Characterization by DC electronic measurements, microscopy, and x-ray scattering techniques show that the ITO nanocrystals form a complete, connected electrode within a polymer electrolyte matrix, and that the morphology and properties of the nanocomposites can be manipulated by changing the chemical composition of the deposition solution. Careful application of AC impedance spectroscopy techniques and DC measurements are used to show that the nanocomposites exhibit mixed ionic and electronic conductivity, where electronic charge is transported through the ITO nanocrystal phase, and ionic charge is transported through the polymer matrix phase. The synthetic methods developed here and understanding of charge transport ultimately lead to the fabrication of a solid state nanocomposite electrochromic device based on nanocrystals of ITO and cerium oxide. Part II of this dissertation considers electron transport within individual metal oxide nanocrystals themselves. It primarily examines relationships between synthetic chemistry, doping mechanisms in metal oxides, and the accompanying physics of free carrier scattering within the interior of highly doped metal oxide nanocrystals, with particular mind paid to ITO nanocrystals. Additionally, synthetic methods as well as metal oxide defect chemistry influences the balance between activation and compensation of dopants, which limits the nanocrystals' free carrier concentration. Furthermore, because of ionized impurity scattering of the oscillating electrons by dopant ions, scattering must be treated in a fundamentally different way in semiconductor metal oxide materials when compared with conventional metals. (Abstract shortened by ProQuest.).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meusel, O., E-mail: o.meusel@iap.uni-frankfurt.de; Droba, M.; Noll, D.

The transport of intense ion beams is affected by the collective behavior of this kind of multi-particle and multi-species system. The space charge expressed by the generalized perveance dominates the dynamical process of thermalisation, which leads to emittance growth. To prevent changes of intrinsic beam properties and to reduce the intensity dependent focusing forces, space charge compensation seems to be an adequate solution. In the case of positively charged ion beams, electrons produced by residual gas ionization and secondary electrons provide the space charge compensation. The influence of the compensation particles on the beam transport and the local degree ofmore » space charge compensation is given by different beam properties as well as the ion beam optics. Especially for highly charged ion beams, space charge compensation in combination with poor vacuum conditions leads to recombination processes and therefore increased beam losses. Strategies for providing a compensation-electron reservoir at very low residual gas pressures will be discussed.« less

Charge Transport Properties in Disordered Organic Semiconductor as a Function of Charge Density: Monte Carlo Simulation

NASA Astrophysics Data System (ADS)

Shukri, Seyfan Kelil

2017-01-01

We have done Kinetic Monte Carlo (KMC) simulations to investigate the effect of charge carrier density on the electrical conductivity and carrier mobility in disordered organic semiconductors using a lattice model. The density of state (DOS) of the system are considered to be Gaussian and exponential. Our simulations reveal that the mobility of the charge carrier increases with charge carrier density for both DOSs. In contrast, the mobility of charge carriers decreases as the disorder increases. In addition the shape of the DOS has a significance effect on the charge transport properties as a function of density which are clearly seen. On the other hand, for the same distribution width and at low carrier density, the change occurred on the conductivity and mobility for a Gaussian DOS is more pronounced than that for the exponential DOS.