Electrical and Magnetic Properties of Binary Amorphous Transition Metal Alloys.

NASA Astrophysics Data System (ADS)

Liou, Sy-Hwang

The electrical, superconductive and magnetic properties of several binary transition metal amorphous and metastable crystalline alloys, Fe(,x)Ti(,100-x) (30 (LESSTHEQ) x (LESSTHEQ) 100), Fe(,x)Zr(,100-x) (20 (LESSTHEQ) x (LESSTHEQ) 93), Fe(,x)Hf(,100-x) (20 (LESSTHEQ) x (LESSTHEQ) 100), Fe(,x)Nb(,100 -x) (22 (LESSTHEQ) x (LESSTHEQ) 85), Ni(,x)Nb(,100-x) (20 (LESSTHEQ) x (LESSTHEQ) 80), Cu(,x)Nb(,100-x) (10 (LESSTHEQ) x (LESSTHEQ) 90) were studied over a wide composition range. Films were made using a magnetron sputtering system, and the structure of the films was investigated by energy dispersive x-ray diffraction. The composition region of each amorphous alloys system was determined and found in good agreement with a model proposed by Egami and Waseda. The magnetic properties and hyperfine interactions in the films were investigated using a conventional Mossbauer spectrometer and a ('57)Co in Rh matrix source. In all Fe-early transition metal binary alloys systems, Fe does not retain its moment in the low iron concentration region and the result is that the critical concentration for magnetic order (x(,c)) is much larger than anticipated from percolation considerations. A direct comparison between crystalline alloys and their amorphous counterparts of the same composition illustrate no clear correlation between crystalline and amorphous states. Pronounced discontinuities in the magnetic properties with variation in Fe content of all Fe-early transition metal alloys at phase boundaries separating amorphous and crystalline states have been observed. This is caused by the differences in the atomic arrangement and the electronic structure between crystalline and amorphous solids. The temperature dependence of resistivity, (rho)(T), of several binary amorphous alloys of Fe-TM (where TM = Ti, Zr, Hf, Nb etc.) has been studied from 2K to 300K. The Fe-poor (x < x(,c)) samples and the Fe-rich (x > x(,c)) samples have distinctive differences in (rho)(T) at low temperature (below 30K). All the magnetic samples show a logarithmic dependence at low temperature that can be described by Kondo scattering. In addition, there is a change in slope of (rho)(T) at a temperature close to the magnetic ordering temperature, indicating a contribution attributed to magnetic ordering. Several Nb-based amorphous alloys (Fe-Nb, Ni-Nb, Cu-Nb) have also been systematically studied. The effect of the magnetic species on superconductivity is investigated. The value of superconducting transition temperature (T(,s)) increases linearly with increasing Nb concentration. (Abstract shortened with permission of author.).

Monte Carlo simulation of magnetic properties of mixed spin (3/2, 1) ferromagnetic and ferrimagnetic disordered binary alloys with amorphous structure

NASA Astrophysics Data System (ADS)

Motlagh, H. Nakhaei; Rezaei, G.

2018-01-01

Monte Carlo simulation is used to study the magnetic properties of mixed spin (3/2, 1) disordered binary alloys on simple cubic, hexagonal and amorphous magnetic ultra-thin films with 18 × 18 × 2 atoms. To this end, at the first approximation, the exchange coupling interaction between the spins is considered as a constant value and at the second one, the Ruderman-Kittel-Kasuya-Yosida (RKKY) model is used. Effects of concentration, structure, exchange interaction, single ion-anisotropy and the film size on the magnetic properties of disordered ferromagnetic and ferrimagnetic binary alloys are investigated. Our results indicate that the spontaneous magnetization and critical temperatures of rare earth-3d transition binary alloys are affected by these parameters. It is also found that in the ferrimagnetic state, the compensation temperature (Tcom) and the magnetic rearrangement temperature (TR) appear for some concentrations.

Intrinsic charge trapping in amorphous oxide films: status and challenges

NASA Astrophysics Data System (ADS)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection conditions.

Electron tunnelling into amorphous germanium and silicon.

NASA Technical Reports Server (NTRS)

Smith, C. W.; Clark, A. H.

1972-01-01

Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

Metal Composition and Polyethylenimine Doping Capacity Effects on Semiconducting Metal Oxide-Polymer Blend Charge Transport.

PubMed

Huang, Wei; Guo, Peijun; Zeng, Li; Li, Ran; Wang, Binghao; Wang, Gang; Zhang, Xinan; Chang, Robert P H; Yu, Junsheng; Bedzyk, Michael J; Marks, Tobin J; Facchetti, Antonio

2018-04-25

Charge transport and film microstructure evolution are investigated in a series of polyethylenimine (PEI)-doped (0.0-6.0 wt%) amorphous metal oxide (MO) semiconductor thin film blends. Here, PEI doping generality is broadened from binary In 2 O 3 to ternary (e.g., In+Zn in IZO, In+Ga in IGO) and quaternary (e.g., In+Zn+Ga in IGZO) systems, demonstrating the universality of this approach for polymer electron doping of MO matrices. Systematic comparison of the effects of various metal ions on the electronic transport and film microstructure of these blends are investigated by combined thin-film transistor (TFT) response, AFM, XPS, XRD, X-ray reflectivity, and cross-sectional TEM. Morphological analysis reveals that layered MO film microstructures predominate in PEI-In 2 O 3 , but become less distinct in IGO and are not detectable in IZO and IGZO. TFT charge transport measurements indicate a general coincidence of a peak in carrier mobility (μ peak ) and overall TFT performance at optimal PEI doping concentrations. Optimal PEI loadings that yield μ peak values depend not only on the MO elemental composition but also, equally important, on the metal atomic ratios. By investigating the relationship between the MO energy levels and PEI doping by UPS, it is concluded that the efficiency of PEI electron-donation is highly dependent on the metal oxide matrix work function in cases where film morphology is optimal, as in the IGO compositions. The results of this investigation demonstrate the broad generality and efficacy of PEI electron doping applied to electronically functional metal oxide systems and that the resulting film microstructure, morphology, and energy level modifications are all vital to understanding charge transport in these amorphous oxide blends.

Zirconia ceramics for excess weapons plutonium waste

NASA Astrophysics Data System (ADS)

Gong, W. L.; Lutze, W.; Ewing, R. C.

2000-01-01

We synthesized a zirconia (ZrO 2)-based single-phase ceramic containing simulated excess weapons plutonium waste. ZrO 2 has large solubility for other metallic oxides. More than 20 binary systems A xO y-ZrO 2 have been reported in the literature, including PuO 2, rare-earth oxides, and oxides of metals contained in weapons plutonium wastes. We show that significant amounts of gadolinium (neutron absorber) and yttrium (additional stabilizer of the cubic modification) can be dissolved in ZrO 2, together with plutonium (simulated by Ce 4+, U 4+ or Th 4+) and impurities (e.g., Ca, Mg, Fe, Si). Sol-gel and powder methods were applied to make homogeneous, single-phase zirconia solid solutions. Pu waste impurities were completely dissolved in the solid solutions. In contrast to other phases, e.g., zirconolite and pyrochlore, zirconia is extremely radiation resistant and does not undergo amorphization. Baddeleyite (ZrO 2) is suggested as the natural analogue to study long-term radiation resistance and chemical durability of zirconia-based waste forms.

Photochemical route for accessing amorphous metal oxide materials for water oxidation catalysis.

PubMed

Smith, Rodney D L; Prévot, Mathieu S; Fagan, Randal D; Zhang, Zhipan; Sedach, Pavel A; Siu, Man Kit Jack; Trudel, Simon; Berlinguette, Curtis P

2013-04-05

Large-scale electrolysis of water for hydrogen generation requires better catalysts to lower the kinetic barriers associated with the oxygen evolution reaction (OER). Although most OER catalysts are based on crystalline mixed-metal oxides, high activities can also be achieved with amorphous phases. Methods for producing amorphous materials, however, are not typically amenable to mixed-metal compositions. We demonstrate that a low-temperature process, photochemical metal-organic deposition, can produce amorphous (mixed) metal oxide films for OER catalysis. The films contain a homogeneous distribution of metals with compositions that can be accurately controlled. The catalytic properties of amorphous iron oxide prepared with this technique are superior to those of hematite, whereas the catalytic properties of a-Fe(100-y-z)Co(y)Ni(z)O(x) are comparable to those of noble metal oxide catalysts currently used in commercial electrolyzers.

Detecting phase separation of freeze-dried binary amorphous systems using pair-wise distribution function and multivariate data analysis.

PubMed

Chieng, Norman; Trnka, Hjalte; Boetker, Johan; Pikal, Michael; Rantanen, Jukka; Grohganz, Holger

2013-09-15

The purpose of this study is to investigate the use of multivariate data analysis for powder X-ray diffraction-pair-wise distribution function (PXRD-PDF) data to detect phase separation in freeze-dried binary amorphous systems. Polymer-polymer and polymer-sugar binary systems at various ratios were freeze-dried. All samples were analyzed by PXRD, transformed to PDF and analyzed by principal component analysis (PCA). These results were validated by differential scanning calorimetry (DSC) through characterization of glass transition of the maximally freeze-concentrate solute (Tg'). Analysis of PXRD-PDF data using PCA provides a more clear 'miscible' or 'phase separated' interpretation through the distribution pattern of samples on a score plot presentation compared to residual plot method. In a phase separated system, samples were found to be evenly distributed around the theoretical PDF profile. For systems that were miscible, a clear deviation of samples away from the theoretical PDF profile was observed. Moreover, PCA analysis allows simultaneous analysis of replicate samples. Comparatively, the phase behavior analysis from PXRD-PDF-PCA method was in agreement with the DSC results. Overall, the combined PXRD-PDF-PCA approach improves the clarity of the PXRD-PDF results and can be used as an alternative explorative data analytical tool in detecting phase separation in freeze-dried binary amorphous systems. Copyright © 2013 Elsevier B.V. All rights reserved.

Neural network based feed-forward high density associative memory

NASA Technical Reports Server (NTRS)

Daud, T.; Moopenn, A.; Lamb, J. L.; Ramesham, R.; Thakoor, A. P.

1987-01-01

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Mechanical properties of graphene oxides.

PubMed

Liu, Lizhao; Zhang, Junfeng; Zhao, Jijun; Liu, Feng

2012-09-28

The mechanical properties, including the Young's modulus and intrinsic strength, of graphene oxides are investigated by first-principles computations. Structural models of both ordered and amorphous graphene oxides are considered and compared. For the ordered graphene oxides, the Young's modulus is found to vary from 380 to 470 GPa as the coverage of oxygen groups changes, respectively. The corresponding variations in the Young's modulus of the amorphous graphene oxides with comparable coverage are smaller at 290-430 GPa. Similarly, the ordered graphene oxides also possess higher intrinsic strength compared with the amorphous ones. As coverage increases, both the Young's modulus and intrinsic strength decrease monotonically due to the breaking of the sp(2) carbon network and lowering of the energetic stability for the ordered and amorphous graphene oxides. In addition, the band gap of the graphene oxide becomes narrower under uniaxial tensile strain, providing an efficient way to tune the electronic properties of graphene oxide-based materials.

Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

NASA Astrophysics Data System (ADS)

Takase, Ryohei; Ishimaru, Manabu; Uchida, Noriyuki; Maeda, Tatsuro; Sato, Kazuhisa; Lieten, Ruben R.; Locquet, Jean-Pierre

2016-12-01

Thermally induced crystallization processes for amorphous GeSn thin films with Sn concentrations beyond the solubility limit of the bulk crystal Ge-Sn binary system have been examined by X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, and (scanning) transmission electron microscopy. We paid special attention to the behavior of Sn before and after recrystallization. In the as-deposited specimens, Sn atoms were homogeneously distributed in an amorphous matrix. Prior to crystallization, an amorphous-to-amorphous phase transformation associated with the rearrangement of Sn atoms was observed during heat treatment; this transformation is reversible with respect to temperature. Remarkable recrystallization occurred at temperatures above 400 °C, and Sn atoms were ejected from the crystallized GeSn matrix. The segregation of Sn became more pronounced with increasing annealing temperature, and the ejected Sn existed as a liquid phase. It was found that the molten Sn remains as a supercooled liquid below the eutectic temperature of the Ge-Sn binary system during the cooling process, and finally, β-Sn precipitates were formed at ambient temperature.

Heterogeneous water oxidation: surface activity versus amorphization activation in cobalt phosphate catalysts.

PubMed

González-Flores, Diego; Sánchez, Irene; Zaharieva, Ivelina; Klingan, Katharina; Heidkamp, Jonathan; Chernev, Petko; Menezes, Prashanth W; Driess, Matthias; Dau, Holger; Montero, Mavis L

2015-02-16

Is water oxidation catalyzed at the surface or within the bulk volume of solid oxide materials? This question is addressed for cobalt phosphate catalysts deposited on inert electrodes, namely crystallites of pakhomovskyite (Co3(PO4)2⋅8 H2O, Pak) and phosphate-containing Co oxide (CoCat). X-ray spectroscopy reveals that oxidizing potentials transform the crystalline Pak slowly (5-8 h) but completely into the amorphous CoCat. Electrochemical analysis supports high-TOF surface activity in Pak, whereas its amorphization results in dominating volume activity of the thereby formed CoCat material. In the directly electrodeposited CoCat, volume catalysis prevails, but not at very low levels of the amorphous material, implying high-TOF catalysis at surface sites. A complete picture of heterogeneous water oxidation requires insight in catalysis at the electrolyte-exposed "outer surface", within a hydrated, amorphous volume phase, and modes and kinetics of restructuring upon operation. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Remarkably stable amorphous metal oxide grown on Zr-Cu-Be metallic glass

PubMed Central

Lim, Ka Ram; Kim, Chang Eun; Yun, Young Su; Kim, Won Tae; Soon, Aloysius; Kim, Do Hyang

2015-01-01

In the present study, we investigated the role of an aliovalent dopant upon stabilizing the amorphous oxide film. We added beryllium into the Zr50Cu50 metallic glass system, and found that the amorphous oxide layer of Be-rich phase can be stabilized even at elevated temperature above Tg of the glass matrix. The thermal stability of the amorphous oxide layer is substantially enhanced due to Be addition. As confirmed by high-temperature cross-section HR-TEM, fully disordered Be-added amorphous layer is observed, while the rapid crystallization is observed without Be. To understand the role of Be, we employed ab-initio molecular dynamics to compare the mobility of ions with/without Be dopant, and propose a disordered model where Be dopant occupies Zr vacancy and induces structural disorder to the amorphous phase. We find that the oxygen mobility is slightly suppressed due to Be dopant, and Be mobility is unexpectedly lower than that of oxygen, which we attribute to the aliovalent nature of Be dopant whose diffusion always accompany multiple counter-diffusion of other ions. Here, we explain the origin of superior thermal stability of amorphous oxide film in terms of enhanced structural disorder and suppressed ionic mobility due to the aliovalent dopant. PMID:26658671

Remarkably stable amorphous metal oxide grown on Zr-Cu-Be metallic glass.

PubMed

Lim, Ka Ram; Kim, Chang Eun; Yun, Young Su; Kim, Won Tae; Soon, Aloysius; Kim, Do Hyang

2015-12-14

In the present study, we investigated the role of an aliovalent dopant upon stabilizing the amorphous oxide film. We added beryllium into the Zr50Cu50 metallic glass system, and found that the amorphous oxide layer of Be-rich phase can be stabilized even at elevated temperature above Tg of the glass matrix. The thermal stability of the amorphous oxide layer is substantially enhanced due to Be addition. As confirmed by high-temperature cross-section HR-TEM, fully disordered Be-added amorphous layer is observed, while the rapid crystallization is observed without Be. To understand the role of Be, we employed ab-initio molecular dynamics to compare the mobility of ions with/without Be dopant, and propose a disordered model where Be dopant occupies Zr vacancy and induces structural disorder to the amorphous phase. We find that the oxygen mobility is slightly suppressed due to Be dopant, and Be mobility is unexpectedly lower than that of oxygen, which we attribute to the aliovalent nature of Be dopant whose diffusion always accompany multiple counter-diffusion of other ions. Here, we explain the origin of superior thermal stability of amorphous oxide film in terms of enhanced structural disorder and suppressed ionic mobility due to the aliovalent dopant.

New Approaches to the Computer Simulation of Amorphous Alloys: A Review.

PubMed

Valladares, Ariel A; Díaz-Celaya, Juan A; Galván-Colín, Jonathan; Mejía-Mendoza, Luis M; Reyes-Retana, José A; Valladares, Renela M; Valladares, Alexander; Alvarez-Ramirez, Fernando; Qu, Dongdong; Shen, Jun

2011-04-13

In this work we review our new methods to computer generate amorphous atomic topologies of several binary alloys: SiH, SiN, CN; binary systems based on group IV elements like SiC; the GeSe 2 chalcogenide; aluminum-based systems: AlN and AlSi, and the CuZr amorphous alloy. We use an ab initio approach based on density functionals and computationally thermally-randomized periodically-continued cells with at least 108 atoms. The computational thermal process to generate the amorphous alloys is the undermelt-quench approach, or one of its variants, that consists in linearly heating the samples to just below their melting (or liquidus) temperatures, and then linearly cooling them afterwards. These processes are carried out from initial crystalline conditions using short and long time steps. We find that a step four-times the default time step is adequate for most of the simulations. Radial distribution functions (partial and total) are calculated and compared whenever possible with experimental results, and the agreement is very good. For some materials we report studies of the effect of the topological disorder on their electronic and vibrational densities of states and on their optical properties.

New Approaches to the Computer Simulation of Amorphous Alloys: A Review

PubMed Central

Valladares, Ariel A.; Díaz-Celaya, Juan A.; Galván-Colín, Jonathan; Mejía-Mendoza, Luis M.; Reyes-Retana, José A.; Valladares, Renela M.; Valladares, Alexander; Alvarez-Ramirez, Fernando; Qu, Dongdong; Shen, Jun

2011-01-01

In this work we review our new methods to computer generate amorphous atomic topologies of several binary alloys: SiH, SiN, CN; binary systems based on group IV elements like SiC; the GeSe2 chalcogenide; aluminum-based systems: AlN and AlSi, and the CuZr amorphous alloy. We use an ab initio approach based on density functionals and computationally thermally-randomized periodically-continued cells with at least 108 atoms. The computational thermal process to generate the amorphous alloys is the undermelt-quench approach, or one of its variants, that consists in linearly heating the samples to just below their melting (or liquidus) temperatures, and then linearly cooling them afterwards. These processes are carried out from initial crystalline conditions using short and long time steps. We find that a step four-times the default time step is adequate for most of the simulations. Radial distribution functions (partial and total) are calculated and compared whenever possible with experimental results, and the agreement is very good. For some materials we report studies of the effect of the topological disorder on their electronic and vibrational densities of states and on their optical properties. PMID:28879948

First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

NASA Astrophysics Data System (ADS)

Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

2015-05-01

First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

Water–solid interactions in amorphous maltodextrin-crystalline sucrose binary mixtures

PubMed Central

Ghorab, Mohamed K.; Toth, Scott J.; Simpson, Garth J.; Mauer, Lisa J.; Taylor, Lynne S.

2016-01-01

Amorphous and crystalline solids are commonly found together in a variety of pharmaceutical and food products. In this study, the influence of co-formulation of amorphous maltodextrins (MDs) and crystalline sucrose (S) on moisture sorption, deliquescence, and glass transition (Tg) properties of powder blends was investigated. Individual components and binary mixtures of four different molecular weight MDs with sucrose in 1:1 w/w ratios were exposed to various relative humidity (RH) environments and their equilibrium and dynamic moisture contents were monitored. The deliquescence point (RH0) and dissolution behavior of sucrose alone and in blends was also monitored by polarized light microscopy and second harmonic generation imaging. In S:MD blends, the deliquescence RH of sucrose was lower than the RH0 of sucrose alone, and synergistic moisture sorption also occurred at RHs lower than the RH0. Intimate contact of sucrose crystals with the amorphous MDs resulted in complete dissolution of sucrose at RH < RH0. When blends were stored at conditions exceeding the Tg of the individual MDs (25 °C and 60%, 49% and 34%RH for MD21, MD29 and MD40, respectively), the Tg of the blends was lower than that of individual MDs. Thus, co-formulation of amorphous MDs with crystalline sucrose sensitizes the blend to moisture, potentially leading to deleterious changes in the formulation if storage conditions are not adequately controlled. PMID:23477494

Effect of Ni Core Structure on the Electrocatalytic Activity of Pt-Ni/C in Methanol Oxidation

PubMed Central

Kang, Jian; Wang, Rongfang; Wang, Hui; Liao, Shijun; Key, Julian; Linkov, Vladimir; Ji, Shan

2013-01-01

Methanol oxidation catalysts comprising an outer Pt-shell with an inner Ni-core supported on carbon, (Pt-Ni/C), were prepared with either crystalline or amorphous Ni core structures. Structural comparisons of the two forms of catalyst were made using transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), and methanol oxidation activity compared using CV and chronoamperometry (CA). While both the amorphous Ni core and crystalline Ni core structures were covered by similar Pt shell thickness and structure, the Pt-Ni(amorphous)/C catalyst had higher methanol oxidation activity. The amorphous Ni core thus offers improved Pt usage efficiency in direct methanol fuel cells. PMID:28811402

Composition-dependent structural and transport properties of amorphous transparent conducting oxides

NASA Astrophysics Data System (ADS)

Khanal, Rabi; Buchholz, D. Bruce; Chang, Robert P. H.; Medvedeva, Julia E.

2015-05-01

Structural properties of amorphous In-based oxides, In -X -O with X =Zn , Ga, Sn, or Ge, are investigated using ab initio molecular dynamics liquid-quench simulations. The results reveal that indium retains its average coordination of 5.0 upon 20% X fractional substitution for In, whereas X cations satisfy their natural coordination with oxygen atoms. This finding suggests that the carrier generation is primarily governed by In atoms, in accord with the observed carrier concentration in amorphous In-O and In -X -O . At the same time, the presence of X affects the number of six-coordinated In atoms as well as the oxygen sharing between the InO6 polyhedra. Based on the obtained interconnectivity and spatial distribution of the InO6 and XO x polyhedra in amorphous In -X -O , composition-dependent structural models of the amorphous oxides are derived. The results help explain our Hall mobility measurements in In -X -O thin films grown by pulsed-laser deposition and highlight the importance of long-range structural correlations in the formation of amorphous oxides and their transport properties.

Solid state amorphization in the Al-Fe binary system during high energy milling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Urban, P., E-mail: purban@us.es; Montes, J. M.; Cintas, J.

2013-12-16

In the present study, mechanical alloying (MA) of Al75Fe25 elemental powders mixture was carried out in argon atmosphere, using a high energy attritor ball mill. The microstructure of the milled products at different stages of milling was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and differential scanning calorimetry (DSC). The results showed that the amorphous phase content increased by increasing the milling time, and after 50 hours the amorphization process became complete. Heating the samples resulted in the crystallization of the synthesized amorphous alloys and the appearance of the equilibrium intermetallic compounds Al{sub 5}Fe{submore » 2}.« less

Intense photoluminescence from amorphous tantalum oxide films

NASA Astrophysics Data System (ADS)

Zhu, Minmin; Zhang, Zhengjun; Miao, Wei

2006-07-01

Tantalum oxide films were deposited on silicon substrates at a temperature of ˜450°C by heating a pure tantalum foil in a rough vacuum. The films were amorphous in structure and consisted of fully oxidized Ta2O5 and (TaOx, x <2.5) suboxides. This feature resulted in strong visible light emission from the films further oxidized in the air at temperatures of 200-300°C. The mechanism for this photoluminescence behavior of the amorphous tantalum oxide films was also investigated and discussed. This study suggests that wide-band-gap materials could act as effective visible light emitters and provides a simple route to synthesize such materials.

Hole conduction pathways in transparent amorphous tin oxides

NASA Astrophysics Data System (ADS)

Wahila, Matthew; Lebens-Higgins, Zachary; Quackenbush, Nicholas; Piper, Louis; Butler, Keith; Hendon, Christopher; Walsh, Aron; Watson, Graeme

P-type transparent amorphous oxide semiconductors (TAOS) have yet to be sufficiently demonstrated or commercialized, severely limiting the possible device architecture of transparent and flexible oxide electronics. The lack of p-type amorphous oxide candidates mainly originates from the directional oxygen 2 p character of their topmost valence states. Previous attempts to create p-type oxides have involved hybridization of the O 2 p with metal orbitals, such as with CuAlO2 and its Cu 3 d - O 2 p hybridization. However, the highly directional nature of the utilized orbitals means that structural disorder inhibits hybridization and severely disrupts hole-conduction pathways. Crystalline stannous oxide (SnO) and other lone-pair active post-transition metal oxides can have reduced localization at the valence band edge due to complex hybridization between the O 2 p, metal p, and spherical metal s-orbitals. I will discuss our investigation of structural disorder in SnO. Using a combination of synchrotron spectroscopy, and atomistic calculations, our investigation elucidates the important interplay between atomistic and electronic structure in establishing continuous hole conduction pathways at the valence band edge of transparent amorphous oxides.

In vitro characterization of a novel polymeric system for preparation of amorphous solid drug dispersions.

PubMed

Mahmoudi, Zahra N; Upadhye, Sampada B; Ferrizzi, David; Rajabi-Siahboomi, Ali R

2014-07-01

Preparation of amorphous solid dispersions using polymers is a commonly used formulation strategy for enhancing the solubility of poorly water-soluble drugs. However, often a single polymer may not bring about a significant enhancement in solubility or amorphous stability of a poorly water-soluble drug. This study describes application of a unique and novel binary polymeric blend in preparation of solid dispersions. The objective of this study was to investigate amorphous solid dispersions of glipizide, a BCS class II model drug, in a binary polymeric system of polyvinyl acetate phthalate (PVAP) and hypromellose (hydroxypropyl methylcellulose, HPMC). The solid dispersions were prepared using two different solvent methods: rotary evaporation (rotavap) and fluid bed drug layering on sugar spheres. The performance and physical stability of the dispersions were evaluated with non-sink dissolution testing, powder X-ray diffraction (PXRD), and modulated differential scanning calorimetry (mDSC). PXRD analysis demonstrated an amorphous state for glipizide, and mDSC showed no evidence of phase separation. Non-sink dissolution testing in pH 7.5 phosphate buffer indicated more than twofold increase in apparent solubility of the drug with PVAP-HPMC system. The glipizide solid dispersions demonstrated a high glass transition temperature (Tg) and acceptable chemical and physical stability during the stability period irrespective of the manufacturing process. In conclusion, the polymeric blend of PVAP-HPMC offers a unique formulation approach for developing amorphous solid dispersions with the flexibility towards the use of these polymers in different ratios and combined quantities depending on drug properties.

Emptying and filling a tunnel bronze

DOE PAGES

Marley, Peter M.; Abtew, Tesfaye A.; Farley, Katie E.; ...

2015-01-13

The classical orthorhombic layered phase of V 2O 5 has long been regarded as the thermodynamic sink for binary vanadium oxides and has found great practical utility as a result of its open framework and easily accessible redox states. Herein, we exploit a cation-exchange mechanism to synthesize a new stable tunnel-structured polymorph of V 2O 5 (ζ-V 2O 5) and demonstrate the subsequent ability of this framework to accommodate Li and Mg ions. The facile extraction and insertion of cations and stabilization of the novel tunnel framework is facilitated by the nanometer-sized dimensions of the materials, which leads to accommodationmore » of strain without amorphization. The topotactic approach demonstrated here indicates not just novel intercalation chemistry accessible at nanoscale dimensions but also suggests a facile synthetic route to ternary vanadium oxide bronzes (MxV 2O 5) exhibiting intriguing physical properties that range from electronic phase transitions to charge ordering and superconductivity.« less

Self-association of plant wax components: a thermodynamic analysis.

PubMed

Casado, C G; Heredia, A

2001-01-01

Excess specific heat, C(p)()(E), of binary mixtures of selected components of plant cuticular waxes has been determined. This thermodynamic parameter gives an explanation of the special molecular arrangement in crystalline and amorphous zones of plant waxes. C(p)()(E) values indicate that hydrogen bonding between chains results in the formation of amorphous zones. Conclusions on the self-asembly process of plant waxes have been also made.

In situ arsenic oxidation and sorption by a Fe-Mn binary oxide waste in soil.

PubMed

McCann, Clare M; Peacock, Caroline L; Hudson-Edwards, Karen A; Shrimpton, Thomas; Gray, Neil D; Johnson, Karen L

2018-01-15

The ability of a Fe-Mn binary oxide waste to adsorb arsenic (As) in a historically contaminated soil was investigated. Initial laboratory sorption experiments indicated that arsenite [As(III)] was oxidized to arsenate [As(V)] by the Mn oxide component, with concurrent As(V) sorption to the Fe oxide. The binary oxide waste had As(III) and As(V) adsorption capacities of 70mgg -1 and 32mgg -1 respectively. X-ray Absorption Near-Edge Structure and Extended X-ray Absorption Fine Structure at the As K-edge confirmed that all binary oxide waste surface complexes were As(V) sorbed by mononuclear bidentate corner-sharing, with 2 Fe at ∼3.27Ǻ. The ability of the waste to perform this coupled oxidation-sorption reaction in real soils was investigated with a 10% by weight addition of the waste to an industrially As contaminated soil. Electron probe microanalysis showed As accumulation onto the Fe oxide component of the binary oxide waste, which had no As innately. The bioaccessibility of As was also significantly reduced by 7.80% (p<0.01) with binary oxide waste addition. The results indicate that Fe-Mn binary oxide wastes could provide a potential in situ remediation strategy for As and Pb immobilization in contaminated soils. Crown Copyright © 2017. Published by Elsevier B.V. All rights reserved.

Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flötotto, D., E-mail: d.floetotto@is.mpg.de; Wang, Z. M.; Jeurgens, L. P. H.

2014-03-03

The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.

Transparent Oxide Thin-Film Transistors: Production, Characterization and Integration

NASA Astrophysics Data System (ADS)

Barquinha, Pedro Miguel Candido

This dissertation is devoted to the study of the emerging area of transparent electronics, summarizing research work regarding the development of n-type thin-film transistors (TFTs) based on sputtered oxide semiconductors. All the materials are produced without intentional substrate heating, with annealing temperatures of only 150-200 °C being used to optimize transistor performance. The work is based on the study and optimization of active semiconductors from the gallium-indium-zinc oxide system, including both the binary compounds Ga2O3, In2O3 and ZnO, as well as ternary and quaternary oxides based on mixtures of those, such as IZO and GIZO with different atomic ratios. Several topics are explored, including the study and optimization of the oxide semiconductor thin films, their application as channel layers on TFTs and finally the implementation of the optimized processes to fabricate active matrix backplanes to be integrated in liquid crystal display (LCD) prototypes. Sputtered amorphous dielectrics with high dielectric constant (high-kappa) based on mixtures of tantalum-silicon or tantalum-aluminum oxides are also studied and used as the dielectric layers on fully transparent TFTs. These devices also include transparent and highly conducting IZO thin films as source, drain and gate electrodes. Given the flexibility of the sputtering technique, oxide semiconductors are analyzed regarding several deposition parameters, such as oxygen partial pressure and deposition pressure, as well as target composition. One of the most interesting features of multicomponent oxides such as IZO and GIZO is that, due to their unique electronic configuration and carrier transport mechanism, they allow to obtain amorphous structures with remarkable electrical properties, such as high hall-effect mobility that exceeds 60 cm2 V -1 s-1 for IZO. These properties can be easily tuned by changing the processing conditions and the atomic ratios of the multicomponent oxides, allowing to have amorphous oxides suitable to be used either as transparent semiconductors or as highly conducting electrodes. The amorphous structure, which is maintained even if the thin films are annealed at 500 °C, brings great advantages concerning interface quality and uniformity in large areas. A complete study comprising different deposition conditions of the semiconductor layer is also made regarding TFT electrical performance. Optimized devices present outstanding electrical performance, such as field-effect mobility (muFE) exceeding 20 cm2 V -1 s-1, turn-on voltage (Von) between -1 and 1 V, subthreshold slope (S) lower than 0.25 V dec-1 and On-Off ratio above 107 . Devices employing amorphous multicomponent oxides present largely improved properties when compared with the ones based on polycrystalline ZnO, mostly in terms of muFE. Within the compositional range where IZO and GIZO films are amorphous, TFT performance can be largely adjusted: for instance, high indium contents favor large mu FE but also highly negative Von, which can be compensated by proper amounts of zinc and gallium. Large oxygen concentrations during oxide semiconductor sputtering are found to be deleterious, decreasing muFE, shifting Von towards high values and turning the devices electrically unstable. It is also shown that semiconductor thickness (ds) has a very important role: for instance, by reducing ds to 10 nm it is possible to produce TFTs with Von≈0 V even using deposition conditions and/or target compositions that normally yield highly conducting films. Given the low ds of the films, this behavior is mostly related with surface states existent at the oxide semiconductor air-exposed back-surface, where depletion layers that can extend towards the dielectric/semiconductor interface are created due to the interaction with atmospheric oxygen. Different passivation layers on top of this air-exposed surface are studied, with SU-8 revealing to be to most effective one. Other important topics are source-drain contact resistance assessment and the effect of different annealing temperatures ( TA), being the properties of the TFTs dominated by TA rather than by the deposition conditions as TA increases. Fully transparent TFTs employing sputtered amorphous multicomponent dielectrics produced without intentional substrate heating present excellent electrical properties, that approach those exhibited by devices using PECVD SiO2 produced at 400 °C. Gate leakage current can be greatly reduced by using tantalum-silicon or tantalum-aluminum oxides rather than Ta2O5. A section of this dissertation is also devoted to the analysis of current stress stability and aging effects of the TFTs, being found that optimal devices exhibit recoverable threshold voltage shifts lower than 0.50 V after 24 h stress with constant drain current of 10 muA, as well as negligible aging effects during 18 months. The research work of this dissertation culminates in the fabrication of a backplane employing transparent TFTs and subsequent integration with a LCD frontplane by Hewlett-Packard. The successful operation of this initial 2.8h prototype with 128x128 pixels provides a solid demonstration that oxide semiconductor-based TFTs have the potential to largely contribute to a novel electronics era, where semiconductor materials away from conventional silicon are used to create fascinating applications, such as transparent electronic products.

Modeling selenate adsorption behavior on oxides, clay minerals, and soils using the triple layer model

USDA-ARS?s Scientific Manuscript database

Selenate adsorption behavior was investigated on amorphous aluminum oxide, amorphous iron oxide, goethite, clay minerals: kaolinites, montmorillonites, illite, and 18 soil samples from Hawaii, and the Southwestern and the Midwestern regions of the US as a function of solution pH. Selenate adsorpti...

Electrical and structural characterization of IZO (indium oxide-zinc oxide) thin films for device applications

NASA Astrophysics Data System (ADS)

Yaglioglu, Burag

Materials for oxide-based transparent electronics have been recently reported in the literature. These materials include various amorphous and crystalline compounds based on multi-component oxides and many of them offer useful combinations of transparency, controllable carrier concentrations, and reasonable n-carrier mobility. In this thesis, the properties of amorphous and crystalline In2O3-10wt%ZnO, IZO, thin films were investigated for their potential use in oxide electronics. The room temperature deposition of this material using DC magnetron sputtering results in the formation of amorphous films. Annealing amorphous IZO films at 500°C in air produces a previously unknown crystalline compound. Using electron diffraction experiments, it is reported that the crystal structure of this compound is based on the high-pressure rhombohedral phase of In2O3. Electrical properties of different phases of IZO were explored and it was concluded that amorphous films offer most promising characteristics for device applications. Therefore, thin film transistors (TFT) were fabricated based on amorphous IZO films where both the channel and metallization layers were deposited from the same target. The carrier densities in the channel and source-drain layers were adjusted by changing the oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with high saturation mobilities.

Ambient temperature NO oxidation over Cr-based amorphous mixed oxide catalysts: effects from the second oxide components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Aiyong; Lin, Bo; Zhang, Hanlei

2017-01-01

Three series of Cr-based mixed oxides (Cr-Co, Cr-Fe, and Cr-Ni oxides) with high specific surface areas and amorphous textures were synthesized using a novel sol-gel method. These mixed oxides, in comparison to their pure metal oxide (CrOx, Co3O4, FeOx and NiO) counterparts, display enhanced performance for catalytic oxidation of low-concentration NO at room temperature. The best performing catalysts achieve 100% NO conversion for ~30 h of operation at a high space velocity of 45,000 ml g-1 h-1. The amorphous structure was found to be critical for these catalysts to maintain high activity and durability. Control of Cr/M (M=Co, Fe andmore » Ni) molar ratio, nitrate precursor decomposition temperature and catalyst calcination temperature was key to the synthesis of these highly active catalysts.« less

Miscibility of amorphous ZrO2-Al2O3 binary alloy

NASA Astrophysics Data System (ADS)

Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S.

2002-04-01

Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2-Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2-Al2O3 amorphous phase is suitable for high-k applications.

Bacterial nanometric amorphous Fe-based oxide: a potential lithium-ion battery anode material.

PubMed

Hashimoto, Hideki; Kobayashi, Genki; Sakuma, Ryo; Fujii, Tatsuo; Hayashi, Naoaki; Suzuki, Tomoko; Kanno, Ryoji; Takano, Mikio; Takada, Jun

2014-04-23

Amorphous Fe(3+)-based oxide nanoparticles produced by Leptothrix ochracea, aquatic bacteria living worldwide, show a potential as an Fe(3+)/Fe(0) conversion anode material for lithium-ion batteries. The presence of minor components, Si and P, in the original nanoparticles leads to a specific electrode architecture with Fe-based electrochemical centers embedded in a Si, P-based amorphous matrix.

Model for determination of mid-gap states in amorphous metal oxides from thin film transistors

NASA Astrophysics Data System (ADS)

Bubel, S.; Chabinyc, M. L.

2013-06-01

The electronic density of states in metal oxide semiconductors like amorphous zinc oxide (a-ZnO) and its ternary and quaternary oxide alloys with indium, gallium, tin, or aluminum are different from amorphous silicon, or disordered materials such as pentacene, or P3HT. Many ZnO based semiconductors exhibit a steep decaying density of acceptor tail states (trap DOS) and a Fermi level (EF) close to the conduction band energy (EC). Considering thin film transistor (TFT) operation in accumulation mode, the quasi Fermi level for electrons (Eq) moves even closer to EC. Classic analytic TFT simulations use the simplification EC-EF> `several'kT and cannot reproduce exponential tail states with a characteristic energy smaller than 1/2 kT. We demonstrate an analytic model for tail and deep acceptor states, valid for all amorphous metal oxides and include the effect of trap assisted hopping instead of simpler percolation or mobility edge models, to account for the observed field dependent mobility.

Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Xu, Runshen

Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors, ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

Energy release properties of amorphous boron and boron-based propellant primary combustion products

NASA Astrophysics Data System (ADS)

Liang, Daolun; Liu, Jianzhong; Xiao, Jinwu; Xi, Jianfei; Wang, Yang; Zhang, Yanwei; Zhou, Junhu

2015-07-01

The microstructure of amorphous boron and the primary combustion products of boron-based fuel-rich propellant (hereafter referred to as primary combustion products) was analyzed by scanning electron microscope. Composition analysis of the primary combustion products was carried out by X-ray diffraction and X-ray photoelectron spectroscopy. The energy release properties of amorphous boron and the primary combustion products were comparatively studied by laser ignition experimental system and thermogravimetry-differential scanning calorimetry. The primary combustion products contain B, C, Mg, Al, B4C, B13C2, BN, B2O3, NH4Cl, H2O, and so on. The energy release properties of primary combustion products are different from amorphous boron, significantly. The full-time spectral intensity of primary combustion products at a wavelength of 580 nm is ~2% lower than that of amorphous boron. The maximum spectral intensity of the former at full wave is ~5% higher than that of the latter. The ignition delay time of primary combustion products is ~150 ms shorter than that of amorphous boron, and the self-sustaining combustion time of the former is ~200 ms longer than that of the latter. The thermal oxidation process of amorphous boron involves water evaporation (weight loss) and boron oxidation (weight gain). The thermal oxidation process of primary combustion products involves two additional steps: NH4Cl decomposition (weight loss) and carbon oxidation (weight loss). CL-20 shows better combustion-supporting effect than KClO4 in both the laser ignition experiments and the thermal oxidation experiments.

OP-AMPS on Flexible Substrates with Printable Materials

DTIC Science & Technology

2011-08-10

Zinc Tin Oxide Thin - Film - Transistor Enhancement...II196, 2010. [3] D. Geng, D. H. Kang, and J. Jang, "High-Performance Amorphous Indium-Gallium- Zinc - Oxide Thin - Film Transistor With a Self-Aligned...B., Dodabalapur, A., “Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin - film transistors ”, Applied

Arsenate uptake and arsenite simultaneous sorption and oxidation by Fe-Mn binary oxides: influence of Mn/Fe ratio, pH, Ca2+, and humic acid.

PubMed

Zhang, Gaosheng; Liu, Huijuan; Qu, Jiuhui; Jefferson, William

2012-01-15

Arsenate retention, arsenite sorption and oxidation on the surfaces of Fe-Mn binary oxides may play an important role in the mobilization and transformation of arsenic, due to the common occurrence of these oxides in the environment. However, no sufficient information on the sorption behaviors of arsenic on Fe-Mn binary oxides is available. This study investigated the influences of Mn/Fe molar ratio, solution pH, coexisting calcium ions, and humic acids have on arsenic sorption by Fe-Mn binary oxides. To create Fe-Mn binary oxides, simultaneous oxidation and co-precipitation methods were employed. The Fe-Mn binary oxides exhibited a porous crystalline structure similar to 2-line ferrihydrite at Mn/Fe ratios 1:3 and below, whereas exhibited similar structures to δ-MnO(2) at higher ratios. The As(V) sorption maximum was observed at a Mn/Fe ratio of 1:6, but As(III) uptake maximum was at Mn/Fe ratio 1:3. However, As(III) adsorption capacity was much higher than that of As(V) at each Mn/Fe ratio. As(V) sorption was found to decrease with increasing pH, while As(III) sorption edge was different, depending on the content of MnO(2) in the binary oxides. The presence of Ca(2+) enhanced the As(V) uptake under alkaline pH, but did not significantly influence the As(III) sorption by 1:9 Fe-Mn binary oxide; whereas the presence of humic acid slightly reduced both As(V) and As(III) uptake. These results indicate that As(III) is more easily immobilized than As(V) in the environment, where Fe-Mn binary oxides are available as sorbents and they represent attractive adsorbents for both As(V) and As(III) removal from water and groundwater. Copyright © 2011 Elsevier Inc. All rights reserved.

Long-term oxidization and phase transition of InN nanotextures

PubMed Central

2011-01-01

The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture. High-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and selected area electron diffraction are used to identify amorphous In-Ox-Ny oxynitride phase. When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase. PMID:21711908

Atomistic simulation of damage accumulation and amorphization in Ge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gomez-Selles, Jose L., E-mail: joseluis.gomezselles@imdea.org; Martin-Bragado, Ignacio; Claverie, Alain

2015-02-07

Damage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of ∼1.3 × 10{sup 22} cm{sup −3} which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions.more » We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions.« less

Effect of electrolyte temperature on the formation of self-organized anodic niobium oxide microcones in hot phosphate-glycerol electrolyte

NASA Astrophysics Data System (ADS)

Yang, S.; Aoki, Y.; Habazaki, H.

2011-07-01

Nanoporous niobium oxide films with microcone-type surface morphology were formed by anodizing at 10 V in glycerol electrolyte containing 0.6 mol dm -3 K 2HPO 4 and 0.2 mol dm -3 K 3PO 4 in a temperature range of 428-453 K. The microcones appeared after prolonged anodizing, but the required time was largely reduced by increasing electrolyte temperature. The anodic oxide was initially amorphous at all temperatures, but crystalline oxide nucleated during anodizing. The anodic oxide microcones, which were crystalline, appeared on surface as a consequence of preferential chemical dissolution of initially formed amorphous oxide. The chemical dissolution of an initially formed amorphous layer was accelerated by increasing the electrolyte temperature, with negligible influence of the temperature on the morphology of microcones up to 448 K.

Structural Elucidation of Poloxamer 237 and Poloxamer 237/Praziquantel Solid Dispersions: Impact of Poly(Vinylpyrrolidone) over Drug Recrystallization and Dissolution.

PubMed

Orlandi, Silvina; Priotti, Josefina; Diogo, Hermínio P; Leonardi, Dario; Salomon, Claudio J; Nunes, Teresa G

2018-04-01

Praziquantel (PZQ) is the recommended, effective, and safe treatment against all forms of schistosomiasis. Solid dispersions (SDs) in water-soluble polymers have been reported to increase solubility and bioavailability of poorly water-soluble drugs like PZQ, generally due to the amorphous form stabilization. In this work, poloxamer (PLX) 237 and poly(vinylpyrrolidone) (PVP) K30 were evaluated as potential carriers to revert PZQ crystallization. Binary and ternary SDs were prepared by the solvent evaporation method. PZQ solubility increased similarly with PLX either as binary physical mixtures or SDs. Such unpredicted data correlated well with crystalline PZQ and PLX as detected by solid-state NMR (ssNMR) and differential scanning calorimetry in those samples. Ternary PVP/PLX/PZQ SDs showed both ssNMR broad and narrow superimposed signals, thus revealing the presence of amorphous and crystalline PZQ, respectively, and exhibited the highest PZQ dissolution efficiency (up to 82% at 180 min). SDs with PVP provided a promising way to enhance solubility and dissolution rate of PZQ since PLX alone did not prevent recrystallization of amorphous PZQ. Based on ssNMR data, novel evidences on PLX structure and molecular dynamics were also obtained. As shown for the first time using ssNMR, propylene glycol and ethylene glycol constitute the PLX amorphous and crystalline components, respectively.

Cu3(BTC)2: CO oxidation over MOF based catalysts.

PubMed

Ye, Jing-yun; Liu, Chang-jun

2011-02-21

Crystalline and amorphized MOFs (Cu(3)(BTC)(2)) have been demonstrated to be excellent catalysts for CO oxidation. The catalytic activity can be further improved by loading PdO(2) nanoparticles onto the amorphized Cu(3)(BTC)(2).

Local structure of amorphous Ag5In5Sb60Te30 and In3SbTe2 phase change materials revealed by X-ray photoelectron and Raman spectroscopic studies

NASA Astrophysics Data System (ADS)

Sahu, Smriti; Manivannan, Anbarasu; Shaik, Habibuddin; Mohan Rao, G.

2017-07-01

Reversible switching between highly resistive (binary "0") amorphous phase and low resistive (binary "1") crystalline phase of chalcogenide-based Phase Change Materials is accredited for the development of next generation high-speed, non-volatile, data storage applications. The doped Sb-Te based materials have shown enhanced electrical/optical properties, compared to Ge-Sb-Te family for high-speed memory devices. We report here the local atomic structure of as-deposited amorphous Ag5In5Sb60Te30 (AIST) and In3SbTe2 (IST) phase change materials using X-ray photoelectron and Raman spectroscopic studies. Although AIST and IST materials show identical crystallization behavior, they differ distinctly in their crystallization temperatures. Our experimental results demonstrate that the local environment of In remains identical in the amorphous phase of both AIST and IST material, irrespective of its atomic fraction. In bonds with Sb (˜44%) and Te (˜56%), thereby forming the primary matrix in IST with a very few Sb-Te bonds. Sb2Te constructs the base matrix for AIST (˜63%) along with few Sb-Sb bonds. Furthermore, an interesting assimilation of the role of small-scale dopants such as Ag and In in AIST, reveals rare bonds between themselves, while showing selective substitution in the vicinity of Sb and Te. This results in increased electronegativity difference, and consequently, the bond strength is recognized as the factor rendering stability in amorphous AIST.

Amorphous tin-cadmium oxide films and the production thereof

DOEpatents

Li, Xiaonan; Gessert, Timothy A

2013-10-29

A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

Amorphous ZnO Quantum Dot/Mesoporous Carbon Bubble Composites for a High-Performance Lithium-Ion Battery Anode.

PubMed

Tu, Zhiming; Yang, Gongzheng; Song, Huawei; Wang, Chengxin

2017-01-11

Due to its high theoretical capacity (978 mA h g -1 ), natural abundance, environmental friendliness, and low cost, zinc oxide is regarded as one of the most promising anode materials for lithium-ion batteries (LIBs). A lot of research has been done in the past few years on this topic. However, hardly any research on amorphous ZnO for LIB anodes has been reported despite the fact that the amorphous type could have superior electrochemical performance due to its isotropic nature, abundant active sites, better buffer effect, and different electrochemical reaction details. In this work, we develop a simple route to prepare an amorphous ZnO quantum dot (QDs)/mesoporous carbon bubble composite. The composite consists of two parts: mesoporous carbon bubbles as a flexible skeleton and monodisperse amorphous zinc oxide QDs (smaller than 3 nm) encapsulated in an amorphous carbon matrix as a continuous coating tightly anchored on the surface of mesoporous carbon bubbles. With the benefits of abundant active sites, amorphous nature, high specific surface area, buffer effect, hierarchical pores, stable interconnected conductive network, and multidimensional electron transport pathways, the amorphous ZnO QD/mesoporous carbon bubble composite delivers a high reversible capacity of nearly 930 mA h g -1 (at current density of 100 mA g -1 ) with almost 90% retention for 85 cycles and possesses a good rate performance. This work opens the possibility to fabricate high-performance electrode materials for LIBs, especially for amorphous metal oxide-based materials.

Natural realgar and amorphous AsS oxidation kinetics

NASA Astrophysics Data System (ADS)

Lengke, Maggy F.; Tempel, Regina N.

2003-03-01

The oxidation rates of natural realgar and amorphous synthetic AsS by dissolved oxygen were evaluated using mixed flow reactors at pH 7.2 to 8.8 and dissolved oxygen contents of 5.9 to 16.5 ppm over a temperature range of 25 to 40°C. The ratios of As/S are stoichiometric for all amorphous AsS oxidation experiments except for two experiments conducted at pH ˜8.8. In these experiments, stoichiometric ratios of As/S were only observed in the early stages of AsS (am) oxidation whereas lower As/S ratios were observed during steady state. For realgar oxidation experiments, the As/S ratio is less than the stoichiometric ratio of realgar, ranging between 0.61 and 0.71. This nonstoichiometric release of As and S to solution indicates that realgar oxidation is more selective for S after the rates of oxidation become constant. All measured oxidation rates at 25°C can be described within experimental uncertainties as follows: Table 1

Evaluation of different amendments to stabilize antimony in mining polluted soils.

PubMed

Álvarez-Ayuso, E; Otones, V; Murciego, A; García-Sánchez, A

2013-02-01

Soil pollution with antimony is of increasing environmental concern worldwide. Measures for its control and to attenuate the risks posed to the ecosystem are required. In this study the application of several iron and aluminium oxides and oxyhydroxides as soil amendments was evaluated in order to assess their feasibility to stabilize Sb in mining polluted soils. Mine soils with different pollution levels were amended with either goethite, ferrihydrite or amorphous Al oxide at various ratios (0-10%). The effectiveness of such treatments was assessed by both batch and column leaching tests. The use of ferrihydrite or amorphous Al oxide proved to be highly effective to stabilize Sb. Immobilization levels of 100% were found when doses of 5% ferrihydrite or 10% amorphous Al oxide were applied, regardless of the soil Sb load. Column leaching studies also showed a high Sb leaching reduction (>75%) when soils were amended with 1% ferrihydrite or 5% amorphous Al oxide. Moreover, such treatments proved to simultaneously immobilize As and Pb in a great extent when soils were also polluted with such toxic elements. Copyright © 2012 Elsevier Ltd. All rights reserved.

Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

PubMed

Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

2017-04-19

Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO 2 and V 2 O 5 , and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

Electron-irradiation-induced crystallization at metallic amorphous/silicon oxide interfaces caused by electronic excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagase, Takeshi, E-mail: t-nagase@uhvem.osaka-u.ac.jp; Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871; Yamashita, Ryo

2016-04-28

Irradiation-induced crystallization of an amorphous phase was stimulated at a Pd-Si amorphous/silicon oxide (a(Pd-Si)/SiO{sub x}) interface at 298 K by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Under irradiation, a Pd-Si amorphous phase was initially formed at the crystalline face-centered cubic palladium/silicon oxide (Pd/SiO{sub x}) interface, followed by the formation of a Pd{sub 2}Si intermetallic compound through irradiation-induced crystallization. The irradiation-induced crystallization can be considered to be stimulated not by defect introduction through the electron knock-on effects and electron-beam heating, but by the electronic excitation mechanism. The observed irradiation-induced structural change at the a(Pd-Si)/SiO{sub x} and Pd/SiO{sub x}more » interfaces indicates multiple structural modifications at the metal/silicon oxide interfaces through electronic excitation induced by the electron-beam processes.« less

Direct /TEM/ observation of the catalytic oxidation of amorphous carbon by Pd particles

NASA Technical Reports Server (NTRS)

Moorhead, R. D.; Poppa, H.; Heinemann, K.

1980-01-01

The catalytic oxidation of amorphous carbon substrates by Pd particles is observed by in situ transmission electron microscopy. Various modes of selective attack of the carbon substrate in the immediate neighborhood of Pd particles are observed, which can be correlated with different degrees of particle mobility. Using amorphous substrates we have been able to demonstrate that the particle-substrate interaction is influenced by the structure of the particle. This has not previously been noted.

Interrogation of bimetallic particle oxidation in three dimensions at the nanoscale

PubMed Central

Han, Lili; Meng, Qingping; Wang, Deli; Zhu, Yimei; Wang, Jie; Du, Xiwen; Stach, Eric A.; Xin, Huolin L.

2016-01-01

An understanding of bimetallic alloy oxidation is key to the design of hollow-structured binary oxides and the optimization of their catalytic performance. However, one roadblock encountered in studying these binary oxide systems is the difficulty in describing the heterogeneities that occur in both structure and chemistry as a function of reaction coordinate. This is due to the complexity of the three-dimensional mosaic patterns that occur in these heterogeneous binary systems. By combining real-time imaging and chemical-sensitive electron tomography, we show that it is possible to characterize these systems with simultaneous nanoscale and chemical detail. We find that there is oxidation-induced chemical segregation occurring on both external and internal surfaces. Additionally, there is another layer of complexity that occurs during the oxidation, namely that the morphology of the initial oxide surface can change the oxidation modality. This work characterizes the pathways that can control the morphology in binary oxide materials. PMID:27928998

Oxide formation and anodic polarization behavior of thin films of amorphous and crystalline FeCrP alloys prepared by ion beam mixing

NASA Astrophysics Data System (ADS)

Demaree, J. D.; Was, G. S.; Sorensen, N. R.

1991-07-01

An experimental program has been conducted to determine the effect of phosphorus on the corrosion and passivation behavior of FeCrP alloys. Chemically homogeneous 60 nm films of Fe10Cr xP ( x from 0 to 35 at.%) were prepared by multilayer evaporation followed by ion beam mixing with Kr + ions. Films with a phosphorus content of at least 25 at.% were found to be entirely amorphous, while films with 15 at.% P consisted of both amorphous and bcc phases. Recrystallization of the amorphous phase was accomplished by heating the samples to 450°C in a purified argon flow furnace. Electrochemical polarization tests in an acid solution have shown the Fe10Cr xP films to be more corrosion resistant than Fe10Cr, with the corrosion resistance increasing with the amount of P present. The corrosion resistance is not significantly affected when the amorphous films are recrystallized, indicating that the behavior is chemically controlled and not a result of the amorphous structure. When examined by XPS, the phosphorus appears to enhance passivation by encouraging Cr enrichment in the oxide and by incorporating in the oxide as phosphate.

Amorphous alumina coatings: processing, structure and remarkable barrier properties.

PubMed

Samélor, Diane; Lazar, Ana-Maria; Aufray, Maëlenn; Tendero, Claire; Lacroix, Loïc; Béguin, Jean-Denis; Caussat, Brigitte; Vergnes, Hugues; Alexis, Joël; Poquillon, Dominique; Pébère, Nadine; Gleizes, Alain; Vahlas, Constantin

2011-09-01

Amorphous aluminium oxide coatings were processed by metalorganic chemical vapour deposition (MOCVD); their structural characteristics were determined as a function of the processing conditions, the process was modelled considering appropriate chemical kinetic schemes, and the properties of the obtained material were investigated and were correlated with the nanostructure of the coatings. With increasing processing temperature in the range 350 degrees C-700 degrees C, subatmospheric MOCVD of alumina from aluminium tri-isopropoxide (ATI) sequentially yields partially hydroxylated amorphous aluminium oxides, amorphous Al2O3 (415 degrees C-650 degrees C) and nanostructured gamma-Al2O3 films. A numerical model for the process allowed reproducing the non uniformity of deposition rate along the substrate zone due to the depletion of ATI. The hardness of the coatings prepared at 350 degrees C, 480 degrees C and 700 degrees C is 6 GPa, 11 GPa and 1 GPa, respectively. Scratch tests on films grown on TA6V titanium alloy reveal adhesive and cohesive failures for the amorphous and nanocrystalline ones, respectively. Alumina coating processed at 480 degrees C on TA6V yielded zero weight gain after oxidation at 600 degrees C in lab air. The surface of such low temperature processed amorphous films is hydrophobic (water contact angle 106 degrees), while the high temperature processed nanocrystalline films are hydrophilic (48 degrees at a deposition temperature of 700 degrees C). It is concluded that amorphous Al2O3 coatings can be used as oxidation and corrosion barriers at ambient or moderate temperature. Nanostructured with Pt or Ag nanoparticles, they can also provide anti-fouling or catalytic surfaces.

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Processing Bi-Pb-Sr-Ca-Cu-O superconductors from amorphous state

NASA Technical Reports Server (NTRS)

Chiang, C. K.; Wong-Ng, W.; Cook, L. P.; Freiman, S. W.; Hwang, N. M.; Vaudin, M.; Hill, M. D.; Shull, R. D.; Shapiro, A. J.; Swartzendruber, L. J.

1991-01-01

The bismuth based high T sub c superconductors can be processed via an amorphous Bi-Pb-Sr-Ca-Cu oxide. The amorphous oxides were prepared by melting the constituent powders in an alumina crucible at 1200 C in air followed by pouring the liquid onto an aluminum plate, and rapidly pressing with a second plate. In the amorphous state, no crystalline phase was identified in the powder x ray diffraction pattern of the quenched materials. After heat treatment at high temperature the amorphous materials crystallized into a glass ceramic containing a large fraction of the Bi2Sr2Ca2Cu3O(x) phase T sub c = 110 K. The processing method, crystallization, and results of dc electrical resistivity and ac magnetic susceptibility measurements are discussed.

The magnetic properties of a magnetic detector using oxidized amorphous Co 95- xFe 5(BSi) x alloys

NASA Astrophysics Data System (ADS)

Ahn, S. J.; Kim, C. K.; Kim, S. J.; Choi, D. K.; O'Handley, R. C.

2000-07-01

A comparative oxidation study of several amorphous Co 75- xFe 5(BSi) 20+ x alloys was carried out. Reentrant magnetization behavior and field-induced anisotropy which are of a critical importance for a magnetic detector were obtained after oxidation of the amorphous Co-rich ribbons. During this oxidation, the ribbons develop surface oxides which are primarily nonmagnetic borosilicate or a combination of borosilicate and magnetic oxides such CoO or FeO. Beneath this lies a 100-1000 Å thick Co-rich magnetic alloy which may be either HCP or FCC in its crystal structure. The thickness of the Co-crystallized layer is determined by the type of the surface oxides. The oxidation products such as appear to affect the reentrant magnetization behavior of Co-rich amorphous alloys significantly. We have determined the amount of metalloids (a critical concentration of B and Si) which is necessary to form a continuous layer of the most thermodynamically stable oxide, in our case borosilicate, on the surface. We also observed that there is a good correlation between reentrant magnetization and the thickness of Co layer. The best reentrant M- H loop for the magnetic detector was obtained in ribbons with a surface borate-rich borosilicate since it ensures conditions such as (1) metalloid depletion in the substrate and (2) formation of oxygen impurity faults in Co grains that are required for strong reentrant magnetization behavior.

Formation of amorphous materials

DOEpatents

Johnson, William L.; Schwarz, Ricardo B.

1986-01-01

Metastable amorphous or fine crystalline materials are formed by solid state reactions by diffusion of a metallic component into a solid compound or by diffusion of a gas into an intermetallic compound. The invention can be practiced on layers of metals deposited on an amorphous substrate or by intermixing powders with nucleating seed granules. All that is required is that the diffusion of the first component into the second component be much faster than the self-diffusion of the first component. The method is practiced at a temperature below the temperature at which the amorphous phase transforms into one or more crystalline phases and near or below the temperature at which the ratio of the rate of diffusion of the first component to the rate of self-diffusion is at least 10.sup.4. This anomalous diffusion criteria is found in many binary, tertiary and higher ordered systems of alloys and appears to be found in all alloy systems that form amorphous materials by rapid quenching. The method of the invention can totally convert much larger dimensional materials to amorphous materials in practical periods of several hours or less.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

Unified interatomic potential and energy barrier distributions for amorphous oxides.

PubMed

Trinastic, J P; Hamdan, R; Wu, Y; Zhang, L; Cheng, Hai-Ping

2013-10-21

Amorphous tantala, titania, and hafnia are important oxides for biomedical implants, optics, and gate insulators. Understanding the effects of oxide doping is crucial to optimize performance in these applications. However, no molecular dynamics potentials have been created to date that combine these and other oxides that would allow computational analyses of doping-dependent structural and mechanical properties. We report a novel set of computationally efficient, two-body potentials modeling van der Waals and covalent interactions that reproduce the structural and elastic properties of both pure and doped amorphous oxides. In addition, we demonstrate that the potential accurately produces energy barrier distributions for pure and doped samples. The distributions can be directly compared to experiment and used to calculate physical quantities such as internal friction to understand how doping affects material properties. Future analyses using these potentials will be of great value to determine optimal doping concentrations and material combinations for myriad material science applications.

On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications

NASA Astrophysics Data System (ADS)

Lee, Sunghwan; Paine, David C.

2011-06-01

In2O3-based amorphous oxide channel materials are of increasing interest for thin film transisitor applications due, in part, to the remarkable stability of this class of materials amorphous structure and electronic properties. We report that this stability is degraded in the presence of Ti, which is widely used as a contact and/or adhesion layer. A cross-sectional transmission electron microscopy analysis, supported by glancing incident angle x-ray and selected area diffraction examination, shows that amorphous indium zinc oxide in contact with Ti undergoes crystallization to the bixbyite phase and reacts to form the rutile phase of TiO2 at a temperature of 200 °C. A basic thermodynamic analysis is presented and forms the basis of a model that describes both the crystallization and the resistivity decrease.

CO2-Assisted Conversion of Crystal Two-Dimensional Molybdenum Oxide to Amorphism with Plasmon Resonances.

PubMed

Liu, Wei; Xu, Qun

2018-04-20

Localized surface plasmon resonances (LSPRs) of ultra-thin two-dimensional (2D) nanomaterials opened a new regime in plasmonics in the last several years. 2D plasmonic materials are yet concentrated on the crystal structure, amorphous materials are hardly reported because of their limited preparation methods rather than undesired plasmonic properties. Taking molybdenum oxides as an example, herein, we elaborate the 2D amorphous plasmons prepared with the assistance of supercritical CO2. In brief, we examine the reported characteristic plasmonic properties of molybdenum oxides, and applications of supercritical CO2 in formations of 2D layer materials as well as introduced phase and disorder engineering based on our researchs. Furthermore, we propose our perspective on the development of 2D plasmons, especially for amorphous layer materials in the future. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ab initio atomistic thermodynamics study on the oxidation mechanism of binary and ternary alloy surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Shi-Yu, E-mail: buaasyliu@gmail.com; Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong; Liu, Shiyang

Utilizing a combination of ab initio density-functional theory and thermodynamics formalism, we have established the microscopic mechanisms for oxidation of the binary and ternary alloy surfaces and provided a clear explanation for the experimental results of the oxidation. We construct three-dimensional surface phase diagrams (SPDs) for oxygen adsorption on three different Nb-X(110) (X = Ti, Al or Si) binary alloy surfaces. On the basis of the obtained SPDs, we conclude a general microscopic mechanism for the thermodynamic oxidation, that is, under O-rich conditions, a uniform single-phase SPD (type I) and a nonuniform double-phase SPD (type II) correspond to the sustainedmore » complete selective oxidation and the non-sustained partial selective oxidation by adding the X element, respectively. Furthermore, by revealing the framework of thermodynamics for the oxidation mechanism of ternary alloys through the comparison of the surface energies of two separated binary alloys, we provide an understanding for the selective oxidation behavior of the Nb ternary alloy surfaces. Using these general microscopic mechanisms, one could predict the oxidation behavior of any binary and multi-component alloy surfaces based on thermodynamics considerations.« less

Comparative electrochemical analysis of crystalline and amorphous anodized iron oxide nanotube layers as negative electrode for LIB.

PubMed

Pervez, Syed Atif; Kim, Doohun; Farooq, Umer; Yaqub, Adnan; Choi, Jung-Hee; Lee, You-Jin; Doh, Chil-Hoon

2014-07-23

This work is a comparative study of the electrochemical performance of crystalline and amorphous anodic iron oxide nanotube layers. These nanotube layers were grown directly on top of an iron current collector with a vertical orientation via a simple one-step synthesis. The crystalline structures were obtained by heat treating the as-prepared (amorphous) iron oxide nanotube layers in ambient air environment. A detailed morphological and compositional characterization of the resultant materials was performed via transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and Raman spectroscopy. The XRD patterns were further analyzed using Rietveld refinements to gain in-depth information on their quantitative phase and crystal structures after heat treatment. The results demonstrated that the crystalline iron oxide nanotube layers exhibit better electrochemical properties than the amorphous iron oxide nanotube layers when evaluated in terms of the areal capacity, rate capability, and cycling performance. Such an improved electrochemical response was attributed to the morphology and three-dimensional framework of the crystalline nanotube layers offering short, multidirectional transport lengths, which favor rapid Li(+) ions diffusivity and electron transport.

Atomistic Texture of Amorphous Manganese Oxides for Electrochemical Water Splitting Revealed by Ab Initio Calculations Combined with X-ray Spectroscopy.

PubMed

Mattioli, Giuseppe; Zaharieva, Ivelina; Dau, Holger; Guidoni, Leonardo

2015-08-19

Amorphous transition-metal (hydr)oxides are considered as the most promising catalysts that promote the oxidation of water to molecular oxygen, protons, and "energized" electrons, and, in turn, as fundamental parts of "artificial leaves" that can be exploited for large scale generation of chemical fuels (e.g., hydrogen) directly from sunlight. We present here a joint theoretical-experimental investigation of electrodeposited amorphous manganese oxides with different catalytic activities toward water oxidation (MnCats). Combining the information content of X-ray absorption fine structure (XAFS) measurements with the predictive power of ab initio calculations based on density functional theory, we have been able to identify the essential structural and electronic properties of MnCats. We have elucidated (i) the localization and structural connection of Mn(II), Mn(III), and Mn(IV) ions in such amorphous oxides and (ii) the distribution of protons at the MnCat/water interface. Our calculations result in realistic 3D models of the MnCat atomistic texture, formed by the interconnection of small planar Mn-oxo sheets cross-linked through different kinds of defective Mn atoms, isolated or arranged in closed cubane-like units. Essential for the catalytic activity is the presence of undercoordinated Mn(III)O5 units located at the boundary of the amorphous network, where they are ready to act as hole traps that trigger the oxidation of neighboring water molecules when the catalyst is exposed to an external positive potential. The present validation of a sound 3D model of MnCat improves the accuracy of XAFS fits and opens the way for the development of mechanistic schemes of its functioning beyond a speculative level.

Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation.

PubMed

Huang, J; Loeffler, M; Muehle, U; Moeller, W; Mulders, J J L; Kwakman, L F Tz; Van Dorp, W F; Zschech, E

2018-01-01

A Ga focused ion beam (FIB) is often used in transmission electron microscopy (TEM) analysis sample preparation. In case of a crystalline Si sample, an amorphous near-surface layer is formed by the FIB process. In order to optimize the FIB recipe by minimizing the amorphization, it is important to predict the amorphous layer thickness from simulation. Molecular Dynamics (MD) simulation has been used to describe the amorphization, however, it is limited by computational power for a realistic FIB process simulation. On the other hand, Binary Collision Approximation (BCA) simulation is able and has been used to simulate ion-solid interaction process at a realistic scale. In this study, a Point Defect Density approach is introduced to a dynamic BCA simulation, considering dynamic ion-solid interactions. We used this method to predict the c-Si amorphization caused by FIB milling on Si. To validate the method, dedicated TEM studies are performed. It shows that the amorphous layer thickness predicted by the numerical simulation is consistent with the experimental data. In summary, the thickness of the near-surface Si amorphization layer caused by FIB milling can be well predicted using the Point Defect Density approach within the dynamic BCA model. Copyright © 2017 Elsevier B.V. All rights reserved.

Oxyanion Induced Variations in Domain Structure for Amorphous Cobalt Oxide Oxygen Evolving Catalysts, Resolved by X-ray Pair Distribution Function Analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Gihan; Kokhan, Oleksandr; Han, Ali

Amorphous thin film oxygen evolving catalysts, OECs, of first-row transition metals show promise to serve as self-assembling photoanode materials in solar-driven, photoelectrochemical `artificial leaf' devices. This report demonstrates the ability to use high-energy X-ray scattering and atomic pair distribution function analysis, PDF, to resolve structure in amorphous metal oxide catalyst films. The analysis is applied here to resolve domain structure differences induced by oxyanion substitution during the electrochemical assembly of amorphous cobalt oxide catalyst films, Co-OEC. PDF patterns for Co-OEC films formed using phosphate, Pi, methylphosphate, MPi, and borate, Bi, electrolyte buffers show that the resulting domains vary in sizemore » following the sequence Pi < MPi < Bi. The increases in domain size for CoMPi and CoBi were found to be correlated with increases in the contributions from bilayer and trilayer stacked domains having structures intermediate between those of the LiCoOO and CoO(OH) mineral forms. The lattice structures and offset stacking of adjacent layers in the partially stacked CoMPi and CoBi domains were best matched to those in the LiCoOO layered structure. The results demonstrate the ability of PDF analysis to elucidate features of domain size, structure, defect content and mesoscale organization for amorphous metal oxide catalysts that are not readily accessed by other X-ray techniques. Finally, PDF structure analysis is shown to provide a way to characterize domain structures in different forms of amorphous oxide catalysts, and hence provide an opportunity to investigate correlations between domain structure and catalytic activity.« less

Oxyanion Induced Variations in Domain Structure for Amorphous Cobalt Oxide Oxygen Evolving Catalysts, Resolved by X-ray Pair Distribution Function Analysis

DOE PAGES

Kwon, Gihan; Kokhan, Oleksandr; Han, Ali; ...

2015-12-01

Amorphous thin film oxygen evolving catalysts, OECs, of first-row transition metals show promise to serve as self-assembling photoanode materials in solar-driven, photoelectrochemical `artificial leaf' devices. This report demonstrates the ability to use high-energy X-ray scattering and atomic pair distribution function analysis, PDF, to resolve structure in amorphous metal oxide catalyst films. The analysis is applied here to resolve domain structure differences induced by oxyanion substitution during the electrochemical assembly of amorphous cobalt oxide catalyst films, Co-OEC. PDF patterns for Co-OEC films formed using phosphate, Pi, methylphosphate, MPi, and borate, Bi, electrolyte buffers show that the resulting domains vary in sizemore » following the sequence Pi < MPi < Bi. The increases in domain size for CoMPi and CoBi were found to be correlated with increases in the contributions from bilayer and trilayer stacked domains having structures intermediate between those of the LiCoOO and CoO(OH) mineral forms. The lattice structures and offset stacking of adjacent layers in the partially stacked CoMPi and CoBi domains were best matched to those in the LiCoOO layered structure. The results demonstrate the ability of PDF analysis to elucidate features of domain size, structure, defect content and mesoscale organization for amorphous metal oxide catalysts that are not readily accessed by other X-ray techniques. Finally, PDF structure analysis is shown to provide a way to characterize domain structures in different forms of amorphous oxide catalysts, and hence provide an opportunity to investigate correlations between domain structure and catalytic activity.« less

Interrogation of bimetallic particle oxidation in three dimensions at the nanoscale

DOE PAGES

Han, Lili; Meng, Qingping; Wang, Deli; ...

2016-12-08

An understanding of bimetallic alloy oxidation is key to the design of hollow-structured binary oxides and the optimization of their catalytic performance. However, one roadblock encountered in studying these binary oxide systems is the difficulty in describing the heterogeneities that occur in both structure and chemistry as a function of reaction coordinate. This is due to the complexity of the three-dimensional mosaic patterns that occur in these heterogeneous binary systems. By combining real-time imaging and chemical-sensitive electron tomography, we show that it is possible to characterize these systems with simultaneous nanoscale and chemical detail. We find that there is oxidation-inducedmore » chemical segregation occurring on both external and internal surfaces. Additionally, there is another layer of complexity that occurs during the oxidation, namely that the morphology of the initial oxide surface can change the oxidation modality. As a result, this work characterizes the pathways that can control the morphology in binary oxide materials.« less

Photo-oxidation of polymer-like amorphous hydrogenated carbon under visible light illumination

DOE PAGES

Baxamusa, Salmaan; Laurence, Ted; Worthington, Matthew; ...

2015-11-10

Amorphous hydrogenated carbon (a-C:H), a polymer-like network typically synthesized by plasma chemical vapor deposition, has long been understood to exhibit optical absorption of visible light (λ > 400 nm). In this report we explain that this absorption is accompanied by rapid photo-oxidation (within minutes) that behaves in most respects like classic polymer photo-oxidation with the exception that it occurs under visible light illumination rather than ultraviolet illumination.

Amorphous vanadium oxide coating on graphene by atomic layer deposition for stable high energy lithium ion anodes.

PubMed

Sun, Xiang; Zhou, Changgong; Xie, Ming; Hu, Tao; Sun, Hongtao; Xin, Guoqing; Wang, Gongkai; George, Steven M; Lian, Jie

2014-09-21

Uniform amorphous vanadium oxide films were coated on graphene via atomic layer deposition and the nano-composite displays an exceptional capacity of ~900 mA h g(-1) at 200 mAg(-1) with an excellent capacity retention at 1 A g(-1) after 200 cycles. The capacity contribution (1161 mA h g(-1)) from vanadium oxide only almost reaches its theoretical value.

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

DOEpatents

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering

DOE PAGES

Ndione, Paul F.; Zakutayev, A.; Kumar, M.; ...

2016-12-05

Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10–2415 S/cm, 4.6–5.3 eV, 3.20–3.34 eV, 9.0–10.8 GPa, and 111–132 GPa, respectively, depending on the cation composition and the deposition conditions. Furthermore, this study enables control of IZTO performance over a broad range of cation compositions.

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizingmore » controllable high-performance stable transistors.« less

Streaming potential method for characterizing interaction of electrical double layers between rice roots and Fe/Al oxide-coated quartz in situ.

PubMed

Liu, Zhao-Dong; Wang, Hai-Cui; Li, Jiu-Yu; Xu, Ren-Kou

2017-10-01

The interaction between rice roots and Fe/Al oxide-coated quartz was investigated through zeta potential measurements and column leaching experiments in present study. The zeta potentials of rice roots, Fe/Al oxide-coated quartz, and the binary systems containing rice roots and Fe/Al oxide-coated quartz were measured by a specially constructed streaming potential apparatus. The interactions between rice roots and Fe/Al oxide-coated quartz particles were evaluated/deduced based on the differences of zeta potentials between the binary systems and the single system of rice roots. The zeta potentials of the binary systems moved in positive directions compared with that of rice roots, suggesting that there were overlapping of diffuse layers of electric double layers on positively charged Fe/Al oxide-coated quartz and negatively charged rice roots and neutralization of positive charge on Fe/Al oxide-coated quartz with negative charge on rice roots. The greater amount of positive charges on Al oxide led to the stronger interaction of Al oxide-coated quartz with rice roots and the more shift of zeta potential compared with Fe oxide. The overlapping of diffuse layers on Fe/Al oxide-coated quartz and rice roots was confirmed by column leaching experiments. The greater overlapping of diffuse layers on Al oxide and rice roots led to more simultaneous adsorptions of K + and NO 3 - and greater reduction in leachate electric conductivity when the column containing Al oxide-coated quartz and rice roots was leached with KNO 3 solution, compared with the columns containing rice roots and Fe oxide-coated quartz or quartz. When the KNO 3 solution was replaced with deionized water to flush the columns, more K + and NO 3 - were desorbed from the binary system containing Al oxide-coated quartz and rice roots than from other two binary systems, suggesting that the stronger electrostatic interaction between Al oxide and rice roots promoted the desorption of K + and NO 3 - from the binary system and enhanced overlapping of diffuse layers on these oppositely charged surfaces compared with other two binary systems. In conclusion, the overlapping of diffuse layers occurred between positively charged Fe/Al oxides and rice roots, which led to neutralization of opposite charge and affected adsorption and desorption of ions onto and from the charged surfaces of Fe/Al oxides and rice roots.

Molecular dynamics simulations of Li transport between cathode crystals

NASA Astrophysics Data System (ADS)

Garofalini, S. H.

The molecular dynamics (MD) computer simulation technique has been used to study the effect of an amorphous intergranular film (IGF) present in a polycrystalline cathode on Li transport. The solid electrolyte is a model lithium silicate glass while the cathode is a nanocrystalline vanadia with an amorphous V 2O 5 IGF separating the crystals. Thin (˜1 to a few nanometer thick) IGFs are known to be present in most polycrystalline oxide materials. However, the role of such a film on Li transport in oxide cathodes has not been addressed. Current scanning probe microscopy (SPM) studies have shown that the orientation of the layered nanocrystalline vanadia crystals near the cathode/solid electrolyte interface is not optimized for Li ion transport. While the precise structure of the material between the crystals has not been identified, initially it can be initially considered as likely to be a thin non-crystalline (amorphous) film. This is based on the ubiquitous presence of such a structure in other polycrystalline oxides. Also, and with more relevance to the materials used in thin film batteries, an amorphous film can be expected to form between nanocrystals that crystallized from an amorphous matrix, as would be the case in a deposited thin film cathode. Consistent with simulations of Li transport in amorphous vanadia, the current simulations show that Li ions diffuse more rapidly into the amorphous intergranular thin film than into the layered vanadia with the (0 0 1) planes parallel to the cathode/electrolyte interface.

Influence of deposition temperature and amorphous carbon on microstructure and oxidation resistance of magnetron sputtered nanocomposite Crsbnd C films

NASA Astrophysics Data System (ADS)

Nygren, Kristian; Andersson, Matilda; Högström, Jonas; Fredriksson, Wendy; Edström, Kristina; Nyholm, Leif; Jansson, Ulf

2014-06-01

It is known that mechanical and tribological properties of transition metal carbide films can be tailored by adding an amorphous carbon (a-C) phase, thus making them nanocomposites. This paper addresses deposition, microstructure, and for the first time oxidation resistance of magnetron sputtered nanocomposite Crsbnd C/a-C films with emphasis on studies of both phases. By varying the deposition temperature between 20 and 700 °C and alternating the film composition, it was possible to deposit amorphous, nanocomposite, and crystalline Crsbnd C films containing about 70% C and 30% Cr, or 40% C and 60% Cr. The films deposited at temperatures below 300 °C were X-ray amorphous and 500 °C was required to grow crystalline phases. Chronoamperometric polarization at +0.6 V vs. Ag/AgCl (sat. KCl) in hot 1 mM H2SO4 resulted in oxidation of Crsbnd C, yielding Cr2O3 and C, as well as oxidation of C. The oxidation resistance is shown to depend on the deposition temperature and the presence of the a-C phase. Physical characterization of film surfaces show that very thin C/Cr2O3/Crsbnd C layers develop on the present material, which can be used to improve the oxidation resistance of, e.g. stainless steel electrodes.

Amorphous titanium-oxide supercapacitors.

PubMed

Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

2016-10-21

The electric capacitance of an amorphous TiO 2-x surface increases proportionally to the negative sixth power of the convex diameter d. This occurs because of the van der Waals attraction on the amorphous surface of up to 7 mF/cm 2 , accompanied by extreme enhanced electron trapping resulting from both the quantum-size effect and an offset effect from positive charges at oxygen-vacancy sites. Here we show that a supercapacitor, constructed with a distributed constant-equipment circuit of large resistance and small capacitance on the amorphous TiO 2-x surface, illuminated a red LED for 37 ms after it was charged with 1 mA at 10 V. The fabricated device showed no dielectric breakdown up to 1,100 V. Based on this approach, further advances in the development of amorphous titanium-dioxide supercapacitors might be attained by integrating oxide ribbons with a micro-electro mechanical system.

Amorphous titanium-oxide supercapacitors

NASA Astrophysics Data System (ADS)

Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

2016-10-01

The electric capacitance of an amorphous TiO2-x surface increases proportionally to the negative sixth power of the convex diameter d. This occurs because of the van der Waals attraction on the amorphous surface of up to 7 mF/cm2, accompanied by extreme enhanced electron trapping resulting from both the quantum-size effect and an offset effect from positive charges at oxygen-vacancy sites. Here we show that a supercapacitor, constructed with a distributed constant-equipment circuit of large resistance and small capacitance on the amorphous TiO2-x surface, illuminated a red LED for 37 ms after it was charged with 1 mA at 10 V. The fabricated device showed no dielectric breakdown up to 1,100 V. Based on this approach, further advances in the development of amorphous titanium-dioxide supercapacitors might be attained by integrating oxide ribbons with a micro-electro mechanical system.

Mechanical contact induced transformation from the amorphous to the crystalline state in metallic glass

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1984-01-01

Friction and wear tests were conducted with 3.2- and 6.4-millimeter-diameter aluminum oxide spheres sliding, in reciprocating motion, on a Fe67Co18B14Si1 metallic foil. Crystallites with a size range of 10 to 150 nanometers were produced on the wear surface of the amorphous alloy. A strong interaction between transition metals and metalloids such as silicon and boron results in strong segregation during repeated sliding, provides preferential transition metal-metalloid clustering in the amorphous alloy, and subsequently produces the diffused honeycomb structure formed by dark grey bands and primary crystals, that is, alpha-Fe in the matrix. Large plastic flow occurs on an amorphous alloy surface with sliding and the flow film of the alloy transfers to the aluminum oxide pin surface. Multiple slip bands due to shear deformation are observed on the side of the wear track. Two distinct types of wear debris were observed as a result of sliding: an alloy wear debris, and/or powdery-whiskery oxide debris.

Microstructure and surface chemistry of amorphous alloys important to their friction and wear behavior

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1983-01-01

An investigation was conducted to examine the microstructure and surface chemistry of amorphous alloys, and their effects on tribological behavior. The results indicate that the surface oxide layers present on amorphous alloys are effective in providing low friction and a protective film against wear in air. Clustering and crystallization in amorphous alloys can be enhanced as a result of plastic flow during the sliding process at a low sliding velocity, at room temperature. Clusters or crystallines with sizes to 150 nm and a diffused honeycomb-shaped structure are produced on the wear surface. Temperature effects lead to drastic changes in surface chemistry and friction behavior of the alloys at temperatures to 750 C. Contaminants can come from the bulk of the alloys to the surface upon heating and impart to the surface oxides at 350 C and boron nitride above 500 C. The oxides increase friction while the boron nitride reduces friction drastically in vacuum.

More Evidence of the Importance of Amorphous Silicates in CM Carbonaceous Chondrites: New Observations from a Fine-Grained Rim in the CM2 Chondrite, TIL 91722

NASA Astrophysics Data System (ADS)

Brearley, A. J.; Le Guillou, C.

2015-07-01

A fine-grained rim in TIL 91722 contains abundant amorphous silicate material containing nanophase sulfides. Phyllosilicates are rare. The amorphous material has a high ferric iron content indicative of oxidation coupled with hydration.

Structures, phase stabilities, and electrical potentials of Li-Si battery anode materials

NASA Astrophysics Data System (ADS)

Tipton, William W.; Bealing, Clive R.; Mathew, Kiran; Hennig, Richard G.

2013-05-01

The Li-Si materials system holds promise for use as an anode in Li-ion battery applications. For this system, we determine the charge capacity, voltage profiles, and energy storage density solely by ab initio methods without any experimental input. We determine the energetics of the stable and metastable Li-Si phases likely to form during the charging and discharging of a battery. Ab initio molecular dynamics simulations are used to model the structure of amorphous Li-Si as a function of composition, and a genetic algorithm coupled to density-functional theory searches the Li-Si binary phase diagram for small-cell, metastable crystal structures. Calculations of the phonon densities of states using density-functional perturbation theory for selected structures determine the importance of vibrational, including zero-point, contributions to the free energies. The energetics and local structural motifs of these metastable Li-Si phases closely resemble those of the amorphous phases, making these small unit cell crystal phases good approximants of the amorphous phase for use in further studies. The charge capacity is estimated, and the electrical potential profiles and the energy density of Li-Si anodes are predicted. We find, in good agreement with experimental measurements, that the formation of amorphous Li-Si only slightly increases the anode potential. Additionally, the genetic algorithm identifies a previously unreported member of the Li-Si binary phase diagram with composition Li5Si2 which is stable at 0 K with respect to previously known phases. We discuss its relationship to the partially occupied Li7Si3 phase.

Doubled heterogeneous crystal nucleation in sediments of hard sphere binary-mass mixtures

NASA Astrophysics Data System (ADS)

Löwen, Hartmut; Allahyarov, Elshad

2011-10-01

Crystallization during the sedimentation process of a binary colloidal hard spheres mixture is explored by Brownian dynamics computer simulations. The two species are different in buoyant mass but have the same interaction diameter. Starting from a completely mixed system in a finite container, gravity is suddenly turned on, and the crystallization process in the sample is monitored. If the Peclet numbers of the two species are both not too large, crystalline layers are formed at the bottom of the cell. The composition of lighter particles in the sedimented crystal is non-monotonic in the altitude: it is first increasing, then decreasing, and then increasing again. If one Peclet number is large and the other is small, we observe the occurrence of a doubled heterogeneous crystal nucleation process. First, crystalline layers are formed at the bottom container wall which are separated from an amorphous sediment. At the amorphous-fluid interface, a secondary crystal nucleation of layers is identified. This doubled heterogeneous nucleation can be verified in real-space experiments on colloidal mixtures.

Dissolution properties of co-amorphous drug-amino acid formulations in buffer and biorelevant media.

PubMed

Heikkinen, A T; DeClerck, L; Löbmann, K; Grohganz, H; Rades, T; Laitinen, R

2015-07-01

Co-amorphous formulations, particularly binary drug-amino acid mixtures, have been shown to provide enhanced dissolution for poorly-soluble drugs and improved physical stability of the amorphous state. However, to date the dissolution properties (mainly intrinsic dissolution rate) of the co-amorphous formulations have been tested only in buffers and their supersaturation ability remain unexplored. Consequently, dissolution studies in simulated intestinal fluids need to be conducted in order to better evaluate the potential of these systems in increasing the oral bioavailability of biopharmaceutics classification system class II drugs. In this study, solubility and dissolution properties of the co-amorphous simvastatin-lysine, gibenclamide-serine, glibenclamide-threonine and glibenclamide-serine-threonine were studied in phosphate buffer pH 7.2 and biorelevant media (fasted and fed state simulated intestinal fluids (FaSSIF and FeSSIF, respectively)). The co-amorphous formulations were found to provide a long-lasting supersaturation and improve the dissolution of the drugs compared to the crystalline and amorphous drugs alone in buffer. Similar improvement, but in lesser extent, was observed in biorelevant media suggesting that a dissolution advantage observed in aqueous buffers may overestimate the advantage in vivo. However, the results show that, in addition to stability advantage shown earlier, co-amorphous drug-amino acid formulations provide dissolution advantage over crystalline drugs in both aqueous and biorelevant conditions.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Enthalpy relaxation studies of two structurally related amorphous drugs and their binary dispersions.

PubMed

Bansal, Shyam Sunder; Kaushal, Aditya Mohan; Bansal, Arvind Kumar

2010-11-01

The purpose of the current study was to evaluate the enthalpy relaxation behavior of valdecoxib (VLB) and etoricoxib (ETB) and their binary dispersions to derive relaxation constants and to understand their molecular mobilities. Solid dispersions of VLB and ETB were prepared with 1%, 2%, 5%, 10%, 15%, and 20% (w/w) concentrations of polyvinylpyrrolidone (PVP) in situ using differential scanning calorimetry (DSC). Enthalpy relaxation studies were carried out with isothermal storage periods of 1, 2, 4, 6, 16, and 24 hours at 40°C and 0% relative humidity (RH). PVP increased the glass transition temperature (T(g)) and decreased the enthalpy relaxation. Significant differences between two drugs were observed with respect to their relaxation behavior which may be due to differences in intermolecular interactions as predicted by Couchman-Karasz equation and molecular mobility. Kohlrausch-Williams-Watts equation was found to be inadequate in describing complex molecular relaxations in binary dispersions. The enthalpy relaxation behavior of VLB and ETB was found to be significantly different. PVP stabilized VLB significantly; however, its effect on ETB was negligible. The extent of enthalpy relaxation was found to correlate with hydrogen bonding tendency of the drug molecules. The outcome can help in rational designing of amorphous systems with optimal performance.

A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors

NASA Astrophysics Data System (ADS)

Lu, Nianduan; Li, Ling; Sun, Pengxiao; Banerjee, Writam; Liu, Ming

2014-09-01

A unified physical model for Seebeck coefficient was presented based on the multiple-trapping and release theory for amorphous oxide semiconductor thin-film transistors. According to the proposed model, the Seebeck coefficient is attributed to the Fermi-Dirac statistics combined with the energy dependent trap density of states and the gate-voltage dependence of the quasi-Fermi level. The simulation results show that the gate voltage, energy disorder, and temperature dependent Seebeck coefficient can be well described. The calculation also shows a good agreement with the experimental data in amorphous In-Ga-Zn-O thin-film transistor.

Absence of single critical dose for the amorphization of quartz under ion irradiation

NASA Astrophysics Data System (ADS)

Zhang, S.; Pakarinen, O. H.; Backholm, M.; Djurabekova, F.; Nordlund, K.; Keinonen, J.; Wang, T. S.

2018-01-01

In this work, we first simulated the amorphization of crystalline quartz under 50 keV 23 Na ion irradiation with classical molecular dynamics (MD). We then used binary collision approximation algorithms to simulate the Rutherford backscattering spectrometry in channeling conditions (RBS-C) from these irradiated MD cells, and compared the RBS-C spectra with experiments. The simulated RBS-C results show an agreement with experiments in the evolution of amorphization as a function of dose, showing what appears to be (by this measure) full amorphization at about 2.2 eVṡatom-1 . We also applied other analysis methods, such as angular structure factor, Wigner-Seitz, coordination analysis and topological analysis, to analyze the structural evolution of the irradiated MD cells. The results show that the atomic-level structure of the sample keeps evolving after the RBS signal has saturated, until the dose of about 5 eVṡatom-1 . The continued evolution of the SiO2 structure makes the definition of what is, on the atomic level, an amorphized quartz ambiguous.

Absence of single critical dose for the amorphization of quartz under ion irradiation.

PubMed

Zhang, S; Pakarinen, O H; Backholm, M; Djurabekova, F; Nordlund, K; Keinonen, J; Wang, T S

2018-01-10

In this work, we first simulated the amorphization of crystalline quartz under 50 keV [Formula: see text]Na ion irradiation with classical molecular dynamics (MD). We then used binary collision approximation algorithms to simulate the Rutherford backscattering spectrometry in channeling conditions (RBS-C) from these irradiated MD cells, and compared the RBS-C spectra with experiments. The simulated RBS-C results show an agreement with experiments in the evolution of amorphization as a function of dose, showing what appears to be (by this measure) full amorphization at about 2.2 eV⋅[Formula: see text]. We also applied other analysis methods, such as angular structure factor, Wigner-Seitz, coordination analysis and topological analysis, to analyze the structural evolution of the irradiated MD cells. The results show that the atomic-level structure of the sample keeps evolving after the RBS signal has saturated, until the dose of about 5 eV⋅[Formula: see text]. The continued evolution of the [Formula: see text] structure makes the definition of what is, on the atomic level, an amorphized quartz ambiguous.

Ce-Sn binary oxide catalyst for the selective catalytic reduction of NOx by NH3

NASA Astrophysics Data System (ADS)

Liu, Zhiming; Feng, Xu; Zhou, Zizheng; Feng, Yongjun; Li, Junhua

2018-01-01

Ce-Sn binary oxide catalysts prepared by the hydrothermal method have been investigated for the selective catalytic reduction (SCR) of NOx with NH3. Compared with pure CeO2 and SnO2, Ce-Sn binary oxide catalyst showed significantly higher NH3-SCR activity. Moreover, Ce-Sn catalyst showed high resistance against H2O and SO2. The high catalytic performance of Ce-Sn binary oxide is attributed to the synergetic effect between Ce and Sn species, which not only enhances the redox property of the catalyst but also increases the Lewis acidity, thus promoting the adsorption and activation of NH3 species, which contributes to improving the NH3-SCR performance.

Oxidation and reduction in irradiated binary crystals of resorcinol and progesterone

NASA Astrophysics Data System (ADS)

Box, Harold C.; Budzinski, Edwin E.

1985-12-01

The binary single crystals of resorcinol and progesterone were x-irradiated at 4.2 K. The semiquinone of resorcinol was generated by radiation induced oxidation. The oxidation and reduction products were identified from ESR and ENDOR measurements. (AIP)

Anti-biofouling function of amorphous nano-Ta2O5 coating for VO2-based intelligent windows.

PubMed

Li, Jinhua; Guo, Geyong; Wang, Jiaxing; Zhou, Huaijuan; Shen, Hao; Yeung, Kelvin W K

2017-04-28

From environmental and health perspectives, the acquisition of a surface anti-biofouling property holds important significance for the usability of VO 2 intelligent windows. Herein, we firstly deposited amorphous Ta 2 O 5 nanoparticles on VO 2 film by the magnetron sputtering method. It was found that the amorphous nano-Ta 2 O 5 coating possessed a favorable anti-biofouling capability against Pseudomonas aeruginosa as an environmental microorganism model, behind which lay the mechanism that the amorphous nano-Ta 2 O 5 could interrupt the microbial membrane electron transport chain and significantly elevate the intracellular reactive oxygen species (ROS) level. A plausible relationship was established between the anti-biofouling activity and physicochemical nature of amorphous Ta 2 O 5 nanoparticles from the perspective of defect chemistry. ROS-induced oxidative damage gave rise to microbial viability loss. In addition, the amorphous nano-Ta 2 O 5 coating can endow VO 2 with favorable cytocompatibility with human skin fibroblasts. This study may provide new insights into understanding the anti-biofouling and antimicrobial actions of amorphous transition metal oxide nanoparticles, which is conducive to expanding their potential applications in environmental fields.

Anti-biofouling function of amorphous nano-Ta2O5 coating for VO2-based intelligent windows

NASA Astrophysics Data System (ADS)

Li, Jinhua; Guo, Geyong; Wang, Jiaxing; Zhou, Huaijuan; Shen, Hao; Yeung, Kelvin W. K.

2017-04-01

From environmental and health perspectives, the acquisition of a surface anti-biofouling property holds important significance for the usability of VO2 intelligent windows. Herein, we firstly deposited amorphous Ta2O5 nanoparticles on VO2 film by the magnetron sputtering method. It was found that the amorphous nano-Ta2O5 coating possessed a favorable anti-biofouling capability against Pseudomonas aeruginosa as an environmental microorganism model, behind which lay the mechanism that the amorphous nano-Ta2O5 could interrupt the microbial membrane electron transport chain and significantly elevate the intracellular reactive oxygen species (ROS) level. A plausible relationship was established between the anti-biofouling activity and physicochemical nature of amorphous Ta2O5 nanoparticles from the perspective of defect chemistry. ROS-induced oxidative damage gave rise to microbial viability loss. In addition, the amorphous nano-Ta2O5 coating can endow VO2 with favorable cytocompatibility with human skin fibroblasts. This study may provide new insights into understanding the anti-biofouling and antimicrobial actions of amorphous transition metal oxide nanoparticles, which is conducive to expanding their potential applications in environmental fields.

Amorphous Mixed-Valence Vanadium Oxide/Exfoliated Carbon Cloth Structure Shows a Record High Cycling Stability.

PubMed

Song, Yu; Liu, Tian-Yu; Yao, Bin; Kou, Tian-Yi; Feng, Dong-Yang; Liu, Xiao-Xia; Li, Yat

2017-04-01

Previous studies show that vanadium oxides suffer from severe capacity loss during cycling in the liquid electrolyte, which has hindered their applications in electrochemical energy storage. The electrochemical instability is mainly due to chemical dissolution and structural pulverization of vanadium oxides during charge/discharge cyclings. In this study the authors demonstrate that amorphous mixed-valence vanadium oxide deposited on exfoliated carbon cloth (CC) can address these two limitations simultaneously. The results suggest that tuning the V 4+ /V 5+ ratio of vanadium oxide can efficiently suppress the dissolution of the active materials. The oxygen-functionalized carbon shell on exfoliated CC can bind strongly with VO x via the formation of COV bonding, which retains the electrode integrity and suppresses the structural degradation of the oxide during charging/discharging. The uptake of structural water during charging and discharging processes also plays an important role in activating the electrode material. The amorphous mixed-valence vanadium oxide without any protective coating exhibits record-high cycling stability in the aqueous electrolyte with no capacitive decay in 100 000 cycles. This work provides new insights on stabilizing vanadium oxide, which is critical for the development of vanadium oxide based energy storage devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Amorphous Mn oxide-ordered mesoporous carbon hybrids as a high performance electrode material for supercapacitors.

PubMed

Nam, Inho; Kim, Nam Dong; Kim, Gil-Pyo; Park, Junsu; Yi, Jongheop

2012-07-01

A supercapacitor has the advantages of both the conventional capacitors and the rechargeable batteries. Mn oxide is generally recognized one of the potential materials that can be used for a supercapacitor, but its low conductivity is a limiting factor for electrode materials. In this study, a hybrid of amorphous Mn oxide (AMO) and ordered mesoporous carbon (OMC) was prepared and characterized using X-ray diffraction, transmission electron microscopy, N2/77 K sorption techniques, and electrochemical analyses. The findings indicate that the electrochemical activities of Mn oxide were facilitated when it was in the hybrid state because OMC acted as a pathway for both the electrolyte ions and the electrons due to the characteristics of the ordered mesoporous structure. The ordered mesoporous structure of OMC was well maintained even after hybridization with amorphous Mn oxide. The electrochemical-activity tests revealed that the AMO/OMC hybrid had a higher specific capacitance and conductivity than pure Mn oxide. In the case where the Mn/C weight ratio was 0.75, the composite showed a high capacitance of 153 F/g, which was much higher than that for pure Mn oxide, due to the structural effects of OMC.

Fe-Mn binary oxide incorporated into diatomite as an adsorbent for arsenite removal: preparation and evaluation.

PubMed

Chang, Fangfang; Qu, Jiuhui; Liu, Huijuan; Liu, Ruiping; Zhao, Xu

2009-10-15

Fe-Mn binary oxide incorporated into diatomite (FMBO-diatomite) was prepared by a simple coating method, and exhibited high oxidation and adsorption ability for arsenite [As(III)]. After being incorporated by Fe-Mn binary oxide, the surface area of diatomite increased 36%, and the pore volume increased five times. The pHzpc of FMBO-diatomite was determined to be 8.1. These characteristics are responsible for the increased As(III) adsorption efficiency. The adsorption equilibria of As(III) on FMBO-diatomite were described well by a Langmuir isotherm model due to the homogeneous distribution of Fe-Mn binary oxide on a diatomite surface. As(III) was oxidized into As(V), and then adsorbed by FMBO-diatomite. The oxidation and adsorption efficiencies for As(III) depended deeply on the pH of solution. When the pH was raised to 8.1, the As(III) adsorption efficiency of FMBO-diatomite was almost equal to the As(III) oxidation efficiency. Silicate and phosphate had negative effects on As(III) adsorption. Also the influence of silicate and phosphate with the pH variation was different.

Nanostructured iron(III)-copper(II) binary oxide: a novel adsorbent for enhanced arsenic removal from aqueous solutions.

PubMed

Zhang, Gaosheng; Ren, Zongming; Zhang, Xiwang; Chen, Jing

2013-08-01

To obtain a highly efficient and low-cost adsorbent for arsenic removal from water, a novel nanostructured Fe-Cu binary oxide was synthesized via a facile co-precipitation method. Various techniques including BET surface area measurement, powder XRD, SEM, and XPS were used to characterize the synthetic Fe-Cu binary oxide. It showed that the oxide was poorly crystalline, 2-line ferrihydrite-like and was aggregated with many nanosized particles. Laboratory experiments were performed to investigate adsorption kinetics, adsorption isotherms, pH adsorption edge and regeneration of spent adsorbent. The results indicated that the Fe-Cu binary oxide with a Cu: Fe molar ratio of 1:2 had excellent performance in removing both As(V) and As(III) from water, and the maximal adsorption capacities for As(V) and As(III) were 82.7 and 122.3 mg/g at pH 7.0, respectively. The values are favorable, compared to those reported in the literature using other adsorbents. The coexisting sulfate and carbonate had no significant effect on arsenic removal. However, the presence of phosphate obviously inhibited the arsenic removal, especially at high concentrations. Moreover, the Fe-Cu binary oxide could be readily regenerated using NaOH solution and be repeatedly used. The Fe-Cu binary oxide could be a promising adsorbent for both As(V) and As(III) removal because of its excellent performance, facile and low-cost synthesis process, and easy regeneration. Copyright © 2013 Elsevier Ltd. All rights reserved.

Facile Synthesis of Highly Efficient Amorphous Mn-MIL-100 Catalysts: Formation Mechanism and Structure Changes during Application in CO Oxidation.

PubMed

Zhang, Xiaodong; Li, Hongxin; Lv, Xutian; Xu, Jingcheng; Wang, Yuxin; He, Chi; Liu, Ning; Yang, Yiqiong; Wang, Yin

2018-06-21

A comprehensive study was carried out on amorphous metal-organic frameworks Mn-MIL-100 as efficient catalysts for CO oxidation. This study focused on explaining the crystalline-amorphous-crystalline transformations during thermolysis of Mn-MIL-100 and studying the structure changes during the CO oxidation reaction. A possible formation mechanism of amorphous Mn-MIL-100 was proposed. Amorphous Mn-MIL-100 obtained by calcination at 250 °C (a-Mn-250) showed a smaller specific surface area (4 m 2  g -1 ) but high catalytic activity. Furthermore, the structure of amorphous Mn-MIL-100 was labile during the reaction. When a-Mn-250 was treated with reaction atmosphere at high temperature (giving used-a-Mn-250-S), the amorphous catalysts transformed into Mn 2 O 3 . Meanwhile, the BET surface area (164 m 2  g -1 ) and catalytic performance both sharply increased. In addition, used-a-Mn-250-S catalyst transformed from Mn 2 O 3 into Mn 3 O 4 , and this resulted in a slight decrease of catalytic activity in the presence of 1 vol % water vapor in the feed stream. A schematic mechanism of the structure changes during the reaction process was proposed. The success of the synthesis relies on the increase in BET surface area by using CO as retreatment atmosphere, and the enhanced catalytic activity was attributed to the unique structure, a large quantity of surface active oxygen species, oxygen vacancies, and good low-temperature reduction behavior. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Adsorption of selenium by amorphous iron oxyhydroxide and manganese dioxide

USGS Publications Warehouse

Balistrieri, L.S.; Chao, T.T.

1990-01-01

This work compares and models the adsorption of selenium and other anions on a neutral to alkaline surface (amorphous iron oxyhydroxide) and an acidic surface (manganese dioxide). Selenium adsorption on these oxides is examined as a function of pH, particle concentration, oxidation state, and competing anion concentration in order to assess how these factors might influence the mobility of selenium in the environment. The data indicate that 1. 1) amorphous iron oxyhydroxide has a greater affinity for selenium than manganese dioxide, 2. 2) selenite [Se(IV)] adsorption increases with decreasing pH and increasing particle concentration and is stronger than selenate [Se(VI)] adsorption on both oxides, and 3. 3) selenate does not adsorb on manganese dioxide. The relative affinity of selenate and selenite for the oxides and the lack of adsorption of selenate on a strongly acidic surface suggests that selenate forms outer-sphere complexes while selenite forms inner-sphere complexes with the surfaces. The data also indicate that the competition sequence of other anions with respect to selenite adsorption at pH 7.0 is phosphate > silicate > molybdate > fluoride > sulfate on amorphous iron oxyhydroxide and molybdate ??? phosphate > silicate > fluoride > sulfate on manganese dioxide. The adsorption of phosphate, molybdate, and silicate on these oxides as a function of pH indicates that the competition sequences reflect the relative affinities of these anions for the surfaces. The Triple Layer surface complexation model is used to provide a quantitative description of these observations and to assess the importance of surface site heterogeneity on anion adsorption. The modeling results suggest that selenite forms binuclear, innersphere complexes with amorphous iron oxyhydroxide and monodentate, inner-sphere complexes with manganese dioxide and that selenate forms outer-sphere, monodentate complexes with amorphous iron oxyhydroxide. The heterogeneity of the oxide surface sites is reflected in decreasing equilibrium constants for selenite with increasing adsorption density and both experimental observations and modeling results suggest that manganese dioxide has fewer sites of higher energy for selenite adsorption than amorphous iron oxyhydroxide. Modeling and interpreting the adsorption of phosphate, molybdate, and silicate on the oxides are made difficult by the lack of constraint in choosing surface species and the fact that equally good fits can be obtained with different surface species. Finally, predictions of anion competition using the model results from single adsorbate systems are not very successful because the model does not account for surface site heterogeneity. Selenite adsorption data from a multi-adsorbate system could be fit if the equilibrium constant for selenite is decreased with increasing anion adsorption density. ?? 1990.

Ab initio modeling of complex amorphous transition-metal-based ceramics.

PubMed

Houska, J; Kos, S

2011-01-19

Binary and ternary amorphous transition metal (TM) nitrides and oxides are of great interest because of their suitability for diverse applications ranging from high-temperature machining to the production of optical filters or electrochromic devices. However, understanding of bonding in, and electronic structure of, these materials represents a challenge mainly due to the d electrons in their valence band. In the present work, we report ab initio calculations of the structure and electronic structure of ZrSiN materials. We focus on the methodology needed for the interpretation and automatic analysis of the bonding structure, on the effect of the length of the calculation on the convergence of individual quantities of interest and on the electronic structure of materials. We show that the traditional form of the Wannier function center-based algorithm fails due to the presence of d electrons in the valence band. We propose a modified algorithm, which allows one to analyze bonding structure in TM-based systems. We observe an appearance of valence p states of TM atoms in the electronic spectra of such systems (not only ZrSiN but also NbO(x) and WAuO), and examine the importance of the p states for the character of the bonding as well as for facilitating the bonding analysis. The results show both the physical phenomena and the computational methodology valid for a wide range of TM-based ceramics.

Mechanism of selenite removal by a mixed adsorbent based on Fe-Mn hydrous oxides studied using X-ray absorption spectroscopy.

PubMed

Chubar, Natalia; Gerda, Vasyl; Szlachta, Małgorzata

2014-11-18

Selenium cycling in the environment is greatly controlled by various minerals, including Mn and Fe hydrous oxides. At the same time, such hydrous oxides are the main inorganic ion exchangers suitable (on the basis of their chemical nature) to sorb (toxic) anions, separating them from water solutions. The mechanism of selenite adsorption by the new mixed adsorbent composed of a few (amorphous and crystalline) phases [maghemite, MnCO3, and X-ray amorphous Fe(III) and Mn(III) hydrous oxides] was studied by extended X-ray absorption fine structure (EXAFS) spectroscopy [supported by Fourier transform infrared (FTIR) and X-ray diffraction (XRD) data]. The complexity of the porous adsorbent, especially the presence of the amorphous phases of Fe(III) and Mn(III) hydrous oxides, is the main reason for its high selenite removal performance demonstrated by batch and column adsorption studies shown in the previous work. Selenite was bound to the material via inner-sphere complexation (via oxygen) to the adsorption sites of the amorphous Fe(III) and Mn(III) oxides. This anion was attracted via bidentate binuclear corner-sharing coordination between SeO3(2-) trigonal pyramids and both FeO6 and MnO6 octahedra; however, the adsorption sites of Fe(III) hydrous oxides played a leading role in selenite removal. The contribution of the adsorption sites of Mn(III) oxide increased as the pH decreased from 8 to 6. Because most minerals have a complex structure (they are seldom based on individual substances) of various crystallinity, this work is equally relevant to environmental science and environmental technology because it shows how various solid phases control cycling of chemical elements in the environment.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

PubMed

Sun, Ke; Saadi, Fadl H; Lichterman, Michael F; Hale, William G; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T; Omelchenko, Stefan T; He, Jr-Hau; Papadantonakis, Kimberly M; Brunschwig, Bruce S; Lewis, Nathan S

2015-03-24

Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Selective Oxidation of Amorphous Carbon Layers without Damaging Embedded Single Wall Carbon Nanotube Bundles

NASA Astrophysics Data System (ADS)

Choi, Young Chul; Lim, Seong Chu

2013-11-01

Single wall carbon nanotubes (SWCNTs) were synthesized by arc discharge, and then purified by selective oxidation of amorphous carbon layers that were found to encase SWCNT bundles and catalyst metal particles. In order to remove selectively the amorphous carbon layers with SWCNTs being intact, we have systematically investigated the thermal treatment conditions; firstly, setting the temperature by measuring the activation energies of SWCNTs and amorphous carbon layers, and then, secondly, finding the optimal process time. As a consequence, the optimal temperature and time for the thermal treatment was found to be 460 °C and 20 min, respectively. The complete elimination of surrounding amorphous carbon layers makes it possible to efficiently disperse the SWCNT bundles, resulting in high absorbance of SWCNT-ink. The SWCNTs which were thermal-treated at optimized temperature (460 °C) and duration (20 min) showed much better crystallinity, dispersibility, and transparent conducting properties, compared with as-synthesized and the nanotubes thermal-treated at different experimental conditions.

Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

NASA Astrophysics Data System (ADS)

Ha, Tae-Jun

2014-10-01

We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (Vth). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger Vth shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

Composition-Dependent Morphology of Bi- and Trimetallic Phosphides: Construction of Amorphous Pd-Cu-Ni-P Nanoparticles as a Selective and Versatile Catalyst.

PubMed

Zhao, Ming; Ji, Yuan; Wang, Mengyue; Zhong, Ning; Kang, Zinan; Asao, Naoki; Jiang, Wen-Jie; Chen, Qiang

2017-10-11

Amorphous materials have been widely researched in heterogeneous catalysis and for next-generation batteries. However, the well-defined production of high-quality (e.g., monodisperse and high surface area) amorphous alloy nanomaterials has rarely been reported. In this work, we investigated the correlations among the composition, morphology, and catalysis of various Pd-M-P nanoparticles (NPs) (M = Cu or Ni), which indicated that less Cu (≤20 atom %) was necessary for the formation of an amorphous morphology. The amorphous Pd-Cu-Ni-P NPs were fabricated with a controllable size and characterized carefully, which show excellent selective catalysis in the semihydrogenation of alkynes, hydrogenation of quinoline, and oxidation of primary alcohols. The uniqueness of the catalytic performance was confirmed by control experiments with monometallic Pd, amorphous Pd-Ni-P NPs, crystalline Pd-Cu-P NPs, and a crystalline counterpart of Pd-Cu-Ni-P catalyst. The catalytic selectivity likely arose from improved Pd-M (M = Cu or Ni) synergistic effects in the amorphous phase and the electron deficiency of Pd. The model reactions proceeded under H 2 or O 2 gas without any additives, bases, or metal oxide supports, and the catalyst could be reused several times. This report is expected to shed light on the design of amorphous alloy nanomaterials as green and inexpensive catalysts for atom-economic and selective reactions.

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geissbühler, Jonas, E-mail: jonas.geissbuehler@epfl.ch; Werner, Jérémie; Martin de Nicolas, Silvia

2015-08-24

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

NASA Technical Reports Server (NTRS)

Fox, D. S.

1994-01-01

Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

DOE PAGES

Geissbühler, Jonas; Werner, Jérémie; Nicolas, Silvia Martin de; ...

2015-08-24

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. Furthermore, we circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

Binary Mixtures of Permanganate and Chlorinated Volatile Organic Compounds in Groundwater Samples: Sample Preservation and Analysis

EPA Science Inventory

Ground water samples collected at sites where in-situ chemical oxidation (ISCO) has been deployed may contain binary mixtures of ground water contaminants and permanganate (MnO4-), an oxidant injected into the subsurface to destroy the contaminant. Commingling of the oxidant and ...

Reductive reactivity of iron(III) oxides in the east china sea sediments: characterization by selective extraction and kinetic dissolution.

PubMed

Chen, Liang-Jin; Zhu, Mao-Xu; Yang, Gui-Peng; Huang, Xiang-Li

2013-01-01

Reactive Fe(III) oxides in gravity-core sediments collected from the East China Sea inner shelf were quantified by using three selective extractions (acidic hydroxylamine, acidic oxalate, bicarbonate-citrate buffered sodium dithionite). Also the reactivity of Fe(III) oxides in the sediments was characterized by kinetic dissolution using ascorbic acid as reductant at pH 3.0 and 7.5 in combination with the reactive continuum model. Three parameters derived from the kinetic method: m 0 (theoretical initial amount of ascorbate-reducible Fe(III) oxides), k' (rate constant) and γ (heterogeneity of reactivity), enable a quantitative characterization of Fe(III) oxide reactivity in a standardized way. Amorphous Fe(III) oxides quantified by acidic hydroxylamine extraction were quickly consumed in the uppermost layer during early diagenesis but were not depleted over the upper 100 cm depth. The total amounts of amorphous and poorly crystalline Fe(III) oxides are highly available for efficient buffering of dissolved sulfide. As indicated by the m 0, k' and γ, the surface sediments always have the maximum content, reactivity and heterogeneity of reactive Fe(III) oxides, while the three parameters simultaneously downcore decrease, much more quickly in the upper layer than at depth. Albeit being within a small range (within one order of magnitude) of the initial rates among sediments at different depths, incongruent dissolution could result in huge discrepancies of the later dissolution rates due to differentiating heterogeneity, which cannot be revealed by selective extraction. A strong linear correlation of the m 0 at pH 3.0 with the dithionite-extractable Fe(III) suggests that the m 0 may represent Fe(III) oxide assemblages spanning amorphous and crystalline Fe(III) oxides. Maximum microbially available Fe(III) predicted by the m 0 at pH 7.5 may include both amorphous and a fraction of other less reactive Fe(III) phases.

Reductive Reactivity of Iron(III) Oxides in the East China Sea Sediments: Characterization by Selective Extraction and Kinetic Dissolution

PubMed Central

Chen, Liang-Jin; Zhu, Mao-Xu; Yang, Gui-Peng; Huang, Xiang-Li

2013-01-01

Reactive Fe(III) oxides in gravity-core sediments collected from the East China Sea inner shelf were quantified by using three selective extractions (acidic hydroxylamine, acidic oxalate, bicarbonate-citrate buffered sodium dithionite). Also the reactivity of Fe(III) oxides in the sediments was characterized by kinetic dissolution using ascorbic acid as reductant at pH 3.0 and 7.5 in combination with the reactive continuum model. Three parameters derived from the kinetic method: m 0 (theoretical initial amount of ascorbate-reducible Fe(III) oxides), k′ (rate constant) and γ (heterogeneity of reactivity), enable a quantitative characterization of Fe(III) oxide reactivity in a standardized way. Amorphous Fe(III) oxides quantified by acidic hydroxylamine extraction were quickly consumed in the uppermost layer during early diagenesis but were not depleted over the upper 100 cm depth. The total amounts of amorphous and poorly crystalline Fe(III) oxides are highly available for efficient buffering of dissolved sulfide. As indicated by the m 0, k′ and γ, the surface sediments always have the maximum content, reactivity and heterogeneity of reactive Fe(III) oxides, while the three parameters simultaneously downcore decrease, much more quickly in the upper layer than at depth. Albeit being within a small range (within one order of magnitude) of the initial rates among sediments at different depths, incongruent dissolution could result in huge discrepancies of the later dissolution rates due to differentiating heterogeneity, which cannot be revealed by selective extraction. A strong linear correlation of the m 0 at pH 3.0 with the dithionite-extractable Fe(III) suggests that the m 0 may represent Fe(III) oxide assemblages spanning amorphous and crystalline Fe(III) oxides. Maximum microbially available Fe(III) predicted by the m 0 at pH 7.5 may include both amorphous and a fraction of other less reactive Fe(III) phases. PMID:24260377

Physical stability of the amorphous anticholesterol agent (ezetimibe): the role of molecular mobility.

PubMed

Knapik, J; Wojnarowska, Z; Grzybowska, K; Hawelek, L; Sawicki, W; Wlodarski, K; Markowski, J; Paluch, M

2014-11-03

The purpose of this paper is to examine the role of molecular mobility in the recrystallization process from the amorphous state of the anticholesterol drug ezetimibe. Both the molecular dynamics and crystallization kinetics have been studied using various experimental techniques, such as broadband dielectric spectroscopy (BDS), differential scanning calorimetry (DSC), and X-ray diffraction (XRD). Our investigations have shown that ezetimibe easily recrystallizes from the disordered state, both below and above its glass transition temperature (Tg = 336 K). Moreover, we found that an only slightly elevated pressure (5 MPa) significantly accelerates the recrystallization process at T > Tg. We predict that the structural relaxation time of amorphous ezetimibe at 293 K (storage temperature) and ambient pressure is only 22 days. This result corresponds to the characteristic time, determined from XRD measurements, for amorphous ezetimibe to recrystallize during storage at Troom = 298 K. It leads to the conclusion that the molecular mobility reflected in structural relaxation of ezetimibe is mainly responsible for devitrification of this drug. Finally, we determined a relatively easy way to improve the physical stability of the drug by preparing a binary amorphous ezetimibe-Soluplus mixture. Ezetimibe in an amorphous mixture with 20 wt % Soluplus has a much better (over six times) solubility than the pure crystalline material.

Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors.

PubMed

Cho, Kyung-Sang; Heo, Keun; Baik, Chan-Wook; Choi, Jun Young; Jeong, Heejeong; Hwang, Sungwoo; Lee, Sang Yeol

2017-10-10

We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10 13 Jones) is obtained, along with three major findings: fast charge separation in monolayered quantum dots; efficient charge transport through high-mobility oxide layers (20 cm 2  V -1  s -1 ); and gate-tunable drain-current modulation. Particularly, the fast charge separation rate of 3.3 ns -1 measured with time-resolved photoluminescence is attributed to the intermediate quantum dots buried in oxide layers. These results facilitate the realization of efficient color-selective detection exhibiting a photoconductive gain of 10 7 , obtained using a room-temperature deposition of oxide layers and a solution process of quantum dots. This work offers promising opportunities in emerging applications for color detection with sensitivity, transparency, and flexibility.The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.

Design of Amorphous Manganese Oxide@Multiwalled Carbon Nanotube Fiber for Robust Solid-State Supercapacitor.

PubMed

Shi, Peipei; Li, Li; Hua, Li; Qian, Qianqian; Wang, Pengfei; Zhou, Jinyuan; Sun, Gengzhi; Huang, Wei

2017-01-24

Solid-state fiber-based supercapacitors have been considered promising energy storage devices for wearable electronics due to their lightweight and amenability to be woven into textiles. Efforts have been made to fabricate a high performance fiber electrode by depositing pseudocapacitive materials on the outer surface of carbonaceous fiber, for example, crystalline manganese oxide/multiwalled carbon nanotubes (MnO 2 /MWCNTs). However, a key challenge remaining is to achieve high specific capacitance and energy density without compromising the high rate capability and cycling stability. In addition, amorphous MnO 2 is actually preferred due to its disordered structure and has been proven to exhibit superior electrochemical performance over the crystalline one. Herein, by incorporating amorphous MnO 2 onto a well-aligned MWCNT sheet followed by twisting, we design an amorphous MnO 2 @MWCNT fiber, in which amorphous MnO 2 nanoparticles are distributed in MWCNT fiber uniformly. The proposed structure gives the amorphous MnO 2 @MWCNT fiber good mechanical reliability, high electrical conductivity, and fast ion-diffusion. Solid-state supercapacitor based on amorphous MnO 2 @MWCNT fibers exhibits improved energy density, superior rate capability, exceptional cycling stability, and excellent flexibility. This study provides a strategy to design a high performance fiber electrode with microstructure control for wearable energy storage devices.

Chain confinement, phase transitions, and lamellar structure in semicrystalline polymers, polymer blends and polymer nanocomposites

NASA Astrophysics Data System (ADS)

Chen, Huipeng

Recent studies suggest that there are three phase fractions in semicrystalline polymers, the crystalline, the mobile amorphous and the rigid amorphous phases. Due to the distinct properties of the rigid amorphous fraction, RAF, it has been investigated for more than twenty years. In this thesis, a general method using quasi-isothermal temperature-modulated differential scaning calorimetry, DSC, is provided for the first time to obtain the temperature dependent RAF and the other two fractions, crystalline fraction and mobile amorphous fraction, MAF. For poly(ethylene terephthalate), PET, our results show RAF was vitrified during quasi-isothermal cooling after crystallization had been completed and became totally devitrified during quasi-isothermal heating before the start of melting. Several years after people initially discovered the existence of RAF, another issue arose relating to the physical location of RAF and mobile amorphous fraction, MAF, within a lamellar stack model. Two very different models to describe the location of RAF were proposed. In the Heterogeneous Stack Model, HET, RAF is located outside the lamellar stacks. In the Homogeneous Stack Model, HSM, RAF was located inside the lamellar stacks. To determine the lamellar structure of semicrystalline polymers comprising three phase, a general method is given in this thesis by using a combination of the DSC and small angle X-ray scattering, SAXS techniques. It has been applied to Nylon 6, isotactic polystyrene, iPS, and PET. It was found for all of these materials, the HSM model is correct to describe the lamellar structure. In addition to the determination of lamellar structures, this method can also provide the exact fraction of MAF inside and outside lamellar stacks for binary polymer blends. For binary polymer blends, MAF, normally is located partially inside and partially outside the lamellar stacks. However, the quantification of the MAF inside and outside the lamellar stacks has now been provided and is applied to the iPS/atactic polystyrene, aPS, blends. The fractions of MAF inside and outside the lamellar stacks were quantified for the first time. For A/B binary polymer blends, it has been reported that if B is already crystalline, the crystalline fraction would serve as a restriction on the subsequent growth of the crystallizable partner A, while amorphous fraction could be diffused from the crystalline growth front of the crystallizing A component. Considering the effect of RAF on binary blends, a new concept is provided: like the crystals, the RAF of one polymer component may inhibit the growth of crystals of the other blend partner. The non-isothermal crystallization of PET/poly(lactic acid), PLA, blends were investigated and the results confirmed the new concept is correct: PET forms a large amount of RAF and inhibits crystal formation in PLA. Then, we broadened the concept of RAF and investigated the RAF in recent 'hot' materials, polymer nanocomposites. It was found the fraction of RAF greatly increased with a small amount of multi-wall carbon nanotubes, MWCNT, loading in PET electrospun, ES, fibers. A general model is given for polymer ES fibers with MWCNTs: the addition of MWCNTs causes polymer chains in the ES fibers to become more extended, (ie, more stretched), resulting in more confinement of PET chains and an increase in the RAF.

Micro-arc oxidation as a tool to develop multifunctional calcium-rich surfaces for dental implant applications.

PubMed

Ribeiro, A R; Oliveira, F; Boldrini, L C; Leite, P E; Falagan-Lotsch, P; Linhares, A B R; Zambuzzi, W F; Fragneaud, B; Campos, A P C; Gouvêa, C P; Archanjo, B S; Achete, C A; Marcantonio, E; Rocha, L A; Granjeiro, J M

2015-09-01

Titanium (Ti) is commonly used in dental implant applications. Surface modification strategies are being followed in last years in order to build Ti oxide-based surfaces that can fulfill, simultaneously, the following requirements: induced cell attachment and adhesion, while providing a superior corrosion and tribocorrosion performance. In this work micro-arc oxidation (MAO) was used as a tool for the growth of a nanostructured bioactive titanium oxide layer aimed to enhance cell attachment and adhesion for dental implant applications. Characterization of the surfaces was performed, in terms of morphology, topography, chemical composition and crystalline structure. Primary human osteoblast adhesion on the developed surfaces was investigated in detail by electronic and atomic force microscopy as well as immunocytochemistry. Also an investigation on the early cytokine production was performed. Results show that a relatively thick hybrid and graded oxide layer was produced on the Ti surface, being constituted by a mixture of anatase, rutile and amorphous phases where calcium (Ca) and phosphorous (P) were incorporated. An outermost nanometric-thick amorphous oxide layer rich in Ca was present in the film. This amorphous layer, rich in Ca, improved fibroblast viability and metabolic activity as well as osteoblast adhesion. High-resolution techniques allowed to understand that osteoblasts adhered less in the crystalline-rich regions while they preferentially adhere and spread over in the Ca-rich amorphous oxide layer. Also, these surfaces induce higher amounts of IFN-γ cytokine secretion, which is known to regulate inflammatory responses, bone microarchitecture as well as cytoskeleton reorganization and cellular spreading. These surfaces are promising in the context of dental implants, since they might lead to faster osseointegration. Copyright © 2015 Elsevier B.V. All rights reserved.

Electrically conducting ternary amorphous fully oxidized materials and their application

NASA Technical Reports Server (NTRS)

Giauque, Pierre (Inventor); Nicolet, Marc (Inventor); Gasser, Stefan M. (Inventor); Kolawa, Elzbieta A. (Inventor); Cherry, Hillary (Inventor)

2004-01-01

Electrically active devices are formed using a special conducting material of the form Tm--Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

DOE PAGES

Sun, Ke; Saadi, Fadl H.; Lichterman, Michael F.; ...

2015-03-11

Reactively sputtered nickel oxide (NiO x) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O 2(g). These NiO x coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Finally, under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiO x films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of watermore » to O 2(g).« less

Ternary and coupled binary zinc tin oxide nanopowders: Synthesis, characterization, and potential application in photocatalytic processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivetić, T.B., E-mail: tamara.ivetic@df.uns.ac.rs; Finčur, N.L.; Đačanin, Lj. R.

2015-02-15

Highlights: • Mechanochemically synthesized nanocrystalline zinc tin oxide (ZTO) powders. • Photocatalytic degradation of alprazolam in the presence of ZTO water suspensions. • Coupled binary ZTO exhibits enhanced photocatalytic activity compared to ternary ZTO. - Abstract: In this paper, ternary and coupled binary zinc tin oxide nanocrystalline powders were prepared via simple solid-state mechanochemical method. X-ray diffraction, scanning electron microscopy, Raman and reflectance spectroscopy were used to study the structure and optical properties of the obtained powder samples. The thermal behavior of zinc tin oxide system was examined through simultaneous thermogravimetric-differential scanning calorimetric analysis. The efficiencies of ternary (Zn{sub 2}SnO{submore » 4} and ZnSnO{sub 3}) and coupled binary (ZnO/SnO{sub 2}) zinc tin oxide water suspensions in the photocatalytic degradation of alprazolam, short-acting anxiolytic of the benzodiazepine class of psychoactive drugs, under UV irradiation were determined and compared with the efficiency of pure ZnO and SnO{sub 2}.« less

High Temperature Superconducting Thick Films

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

2005-08-23

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

Surface characterization of adsorbents in ultrasound-assisted oxidative desulfurization process of fossil fuels.

PubMed

Etemadi, Omid; Yen, Teh Fu

2007-09-01

Surface properties of two different phases of alumina were studied through SEM images. Characterization of amorphous acidic alumina and crystalline boehmite by XRD explains the differences in adsorption capacities of each sample. Data from small angle neutron scattering (SANS) provide further results regarding the ordering in amorphous and crystalline samples of alumina. Quantitative measurements from SANS are used for pore size calculations. Higher disorder provides more topological traps, irregularities, and hidden grooves for higher adsorption capacity. An isotherm model was derived for adsorption of dibenzothiophene sulfone (DBTO) by amorphous acidic alumina to predict and calculate the adsorption of sulfur compounds. The Langmuir-Freundlich model covers a wide range of sulfur concentrations. Experiments prove that amorphous acidic alumina is the adsorbent of choice for selective adsorption in the ultrasound-assisted oxidative desulfurization (UAOD) process to produce ultra-low-sulfur fuel (ULSF).

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

MC3T3-E1 cell response of amorphous phase/TiO2 nanocrystal composite coating prepared by microarc oxidation on titanium.

PubMed

Zhou, Rui; Wei, Daqing; Yang, Haoyue; Feng, Wei; Cheng, Su; Li, Baoqiang; Wang, Yaming; Jia, Dechang; Zhou, Yu

2014-06-01

Bioactive amorphous phase/TiO2 nanocrystal (APTN) composite coatings were fabricated by microarc oxidation (MAO) on Ti. The APTN coatings are composed of much amorphous phase with Si, Na, Ca, Ti and O elements and a few TiO2 nanocrystals. With increasing applied voltage, the micropore density of the APTN coating decreases and the micropore size of the APTN coating increases. The results indicate that less MC3T3-E1 cells attach on the APTN coatings as compared to Ti. However, the APTN coatings greatly enhance the cell proliferation ability and the activity of alkaline phosphatase. The amorphous phase and the concentrations of the released Ca and Si from the APTN coatings during cell culture have significant effects on the cell response. Copyright © 2014 Elsevier B.V. All rights reserved.

Radiation-induced amorphization resistance and radiation tolerance in structurally related oxides.

PubMed

Sickafus, Kurt E; Grimes, Robin W; Valdez, James A; Cleave, Antony; Tang, Ming; Ishimaru, Manabu; Corish, Siobhan M; Stanek, Christopher R; Uberuaga, Blas P

2007-03-01

Ceramics destined for use in hostile environments such as nuclear reactors or waste immobilization must be highly durable and especially resistant to radiation damage effects. In particular, they must not be prone to amorphization or swelling. Few ceramics meet these criteria and much work has been devoted in recent years to identifying radiation-tolerant ceramics and the characteristics that promote radiation tolerance. Here, we examine trends in radiation damage behaviour for families of compounds related by crystal structure. Specifically, we consider oxides with structures related to the fluorite crystal structure. We demonstrate that improved amorphization resistance characteristics are to be found in compounds that have a natural tendency to accommodate lattice disorder.

Removal of thallium from aqueous solutions using Fe-Mn binary oxides.

PubMed

Li, Huosheng; Chen, Yongheng; Long, Jianyou; Li, Xiuwan; Jiang, Daqian; Zhang, Ping; Qi, Jianying; Huang, Xuexia; Liu, Juan; Xu, Ruibing; Gong, Jian

2017-09-15

In this study, Fe-Mn binary oxides, which harbor the strong oxidative power of manganese dioxide and the high adsorption capacity of iron oxides, were synthesized for Tl(I) removal using a concurrent chemical oxidation and precipitation method. The adsorption of Tl onto the Fe-Mn adsorbent was fast, effective, and selective, with equilibrium sorption reaching over 95% under a broad operating pH (3-12), and high ionic strength (0.1-0.5mol/L). The adsorption can be well fitted with both Langmuir and Freundlich isotherms, and the kinetics can be well described by the pseudo-second-order model. Fourier transform infrared (FT-IR) and X-ray photoelectron spectroscopy (XPS) spectra suggest that surface complexation, oxidation and precipitation were the main mechanisms for the removal of Tl. This study shows that the Fe-Mn binary oxides could be a promising adsorbent for Tl removal. Copyright © 2017 Elsevier B.V. All rights reserved.

Galvanostatically deposited Fe: MnO2 electrodes for supercapacitor application

NASA Astrophysics Data System (ADS)

Dubal, D. P.; Kim, W. B.; Lokhande, C. D.

2012-01-01

The present investigation describes the addition of iron (Fe) in order to improve the supercapacitive properties of MnO2 electrodes using galvanostatic mode. These amorphous worm like Fe: MnO2 electrodes are characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDAX), Fourier transform infrared spectroscopy (FTIR) and wettability test. The supercapacitive properties of MnO2 and Fe: MnO2 electrodes are investigated using cyclic voltammetry, chronopotentiometry and impedance techniques. It is seen that the supercapacitance increases with increase in Fe doping concentration and achieved a maximum of 173 F g-1 at 2 at% Fe doping. The maximum supercapacitance obtained is 218 F g-1 for 2 at% Fe: MnO2 electrode. This hydrous binary oxide exhibited ideal capacitive behavior with high reversibility and high pulse charge-discharge property between -0.1 and +0.9 V/SCE in 1 M Na2SO4 electrolyte indicating a promising electrode material for electrochemical supercapacitors.

Influence of the cooling rate and the blend ratio on the physical stability of co-amorphous naproxen/indomethacin.

PubMed

Beyer, Andreas; Grohganz, Holger; Löbmann, Korbinian; Rades, Thomas; Leopold, Claudia S

2016-12-01

Co-amorphization represents a promising approach to increase the physical stability and dissolution rate of amorphous active pharmaceutical ingredients (APIs) as an alternative to polymer glass solutions. For amorphous and co-amorphous systems, it is reported that the preparation method and the blend ratio play major roles with regard to the resulting physical stability. Therefore, in the present study, co-amorphous naproxen-indomethacin (NAP/IND) was prepared by melt-quenching at three different cooling rates and at ten different NAP/IND blend ratios. The samples were analyzed using XRPD and FTIR, both directly after preparation and during storage to investigate their physical stabilities. All cooling methods led to fully amorphous samples, but with significantly different physical stabilities. Samples prepared by fast cooling had a higher degree of crystallinity after 300d of storage than samples prepared by intermediate cooling and slow cooling. Intermediate cooling was subsequently used to prepare co-amorphous NAP/IND at different blend ratios. In a previous study, it was postulated that the equimolar (0.5:0.5) co-amorphous blend of NAP/IND is most stable. However, in the present study the physically most stable blend was found for a NAP/IND ratio of 0.6:0.4, which also represents the eutectic composition of the crystalline NAP/γ-IND system. This indicates that the eutectic point may be of major importance for the stability of binary co-amorphous systems. Slight deviations from the optimal naproxen molar fraction led to significant recrystallization during storage. Either naproxen or γ-indomethacin recrystallized until a naproxen molar fraction of about 0.6 in the residual co-amorphous phase was reached again. In conclusion, the physical stability of co-amorphous NAP/IND may be significantly improved, if suitable preparation conditions and the optimal phase composition are chosen. Copyright © 2016 Elsevier B.V. All rights reserved.

Evidence for the bias-driven migration of oxygen vacancies in amorphous non-stoichiometric gallium oxide

NASA Astrophysics Data System (ADS)

Guo, D. Y.; Qian, Y. P.; Su, Y. L.; Shi, H. Z.; Li, P. G.; Wu, J. T.; Wang, S. L.; Cui, C.; Tang, W. H.

2017-06-01

The conductivity of gallium oxide thin films is strongly dependent on the growth temperature when they deposited by pulsed laser deposition under vacuum environment, exhibiting an insulative-to-metallic transition with the decrease of the temperature. The high conductive gallium oxide films deposited at low temperature are amorphous, non-stoichiometric, and rich in oxygen vacancy. Large changes in electrical resistance are observed in these non-stoichiometric thin films. The wide variety of hysteretic shapes in the I-V curves depend on the voltage-sweep rate, evidencing that the time-dependent redistribution of oxygen vacancy driven by bias is the controlling parameter for the resistance of gallium oxide.

Structure-Property Relationships in Amorphous Transparent Conducting Oxides

NASA Astrophysics Data System (ADS)

Moffitt, Stephanie Lucille

Over the last 20 years a new field of amorphous transparent conducting oxides (a-TCOs) has developed. The amorphous nature of these films makes them well suited for large area applications. In addition, a-TCOs can be made at low temperatures and through solution processing methods. These assets provide promising opportunities to improve applications such as solar cells and back-lit displays where traditional crystalline TCOs are used. In addition, it opens the door for new technological applications including the possibility for transparent, flexible electronics. Despite the recent growth in this field, fundamental understanding of the true nature of conductivity and the amorphous structure in this materials system is still progressing. To develop a greater understanding of a-TCOs, structure-property relationships were developed in the a-IGO and a-IZO systems. From the combination of element-specific local structure studies and liquid quench molecular dynamics simulations it is clear that a degree of structure remains in a-TCOs. By understanding this structure, the effect of gallium on thermal stability, carrier concentration and carrier mobility is understood. The source of charge carriers in a-IZO is identified as oxygen vacancies through the application of in situ Brouwer analysis. The continued development of the Brouwer analysis technique for use in amorphous oxides adds to the available methods for studying defects in amorphous systems. Finally, the foundational knowledge gained from the in-depth study of a-IGO was extended to understand the role of combustion processing and pulsed laser deposition as growth methods for transistors based on a-IGO.

Reversible amorphization and the catalytically active state of crystalline Co3O4 during oxygen evolution

PubMed Central

Bergmann, Arno; Martinez-Moreno, Elias; Teschner, Detre; Chernev, Petko; Gliech, Manuel; de Araújo, Jorge Ferreira; Reier, Tobias; Dau, Holger; Strasser, Peter

2015-01-01

Water splitting catalysed by earth-abundant materials is pivotal for global-scale production of non-fossil fuels, yet our understanding of the active catalyst structure and reactivity is still insufficient. Here we report on the structurally reversible evolution of crystalline Co3O4 electrocatalysts during oxygen evolution reaction identified using advanced in situ X-ray techniques. At electrode potentials facilitating oxygen evolution, a sub-nanometre shell of the Co3O4 is transformed into an X-ray amorphous CoOx(OH)y which comprises di-μ-oxo-bridged Co3+/4+ ions. Unlike irreversible amorphizations, here, the formation of the catalytically-active layer is reversed by re-crystallization upon return to non-catalytic electrode conditions. The Co3O4 material thus combines the stability advantages of a controlled, stable crystalline material with high catalytic activity, thanks to the structural flexibility of its active amorphous oxides. We propose that crystalline oxides may be tailored for generating reactive amorphous surface layers at catalytic potentials, just to return to their stable crystalline state under rest conditions. PMID:26456525

Reversible amorphization and the catalytically active state of crystalline Co3O4 during oxygen evolution.

PubMed

Bergmann, Arno; Martinez-Moreno, Elias; Teschner, Detre; Chernev, Petko; Gliech, Manuel; de Araújo, Jorge Ferreira; Reier, Tobias; Dau, Holger; Strasser, Peter

2015-10-12

Water splitting catalysed by earth-abundant materials is pivotal for global-scale production of non-fossil fuels, yet our understanding of the active catalyst structure and reactivity is still insufficient. Here we report on the structurally reversible evolution of crystalline Co3O4 electrocatalysts during oxygen evolution reaction identified using advanced in situ X-ray techniques. At electrode potentials facilitating oxygen evolution, a sub-nanometre shell of the Co3O4 is transformed into an X-ray amorphous CoOx(OH)y which comprises di-μ-oxo-bridged Co(3+/4+) ions. Unlike irreversible amorphizations, here, the formation of the catalytically-active layer is reversed by re-crystallization upon return to non-catalytic electrode conditions. The Co3O4 material thus combines the stability advantages of a controlled, stable crystalline material with high catalytic activity, thanks to the structural flexibility of its active amorphous oxides. We propose that crystalline oxides may be tailored for generating reactive amorphous surface layers at catalytic potentials, just to return to their stable crystalline state under rest conditions.

Nanostructured Mn-Fe Binary Mixed Oxide: Synthesis, Characterization and Evaluation for Arsenic Removal.

PubMed

Pillewan, Pradnya; Mukherjee, Shrabanti; Bansiwal, Amit; Rayalu, Sadhana

2014-07-01

Adsorption of arsenic on bimetallic Mn and Fe mixed oxide was carried out using both field as well as simulated water. The material was synthesized using hydrothermal method and characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Langmuir and Freundlich adsorption isotherms were computed using batch adsorption studies to determine the adsorption capacity of Mn-Fe binary mixed oxide for arsenic. Adsorption capacity for MFBMO obtained from Freundlich model was found to be 2.048 mg/g for simulated water and 1.084 mg/g for field water. Mn-Fe binary mixed oxide was found to be effective adsorbent for removal of arsenic from water.

Friction and wear of some ferrous-base metallic glasses

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1983-01-01

Sliding friction experiments, X-ray photoelectron spectroscopy (XPS) analysis, and electron microscopy and diffraction studies were conducted with ferrous base metallic glasses (amorphous alloys) in contact with aluminum oxide at temperatures to 750 C in a vacuum. Sliding friction experiments were also conducted in argon and air atmospheres. The results of the investigation indicate that the coefficient of friction increases with increasing temperature to 350 C in vacuum. The increase in friction is due to an increase in adhesion resulting from surface segregation of boric oxide and/or silicon oxide to the surface of the foil. Above 500 C the coefficient of friction decreased rapidly. The decrease correlates with the segregation of boron nitride to the surface. Contaminants can come from the bulk of the material to the surface upon heating and impart boric oxide and/or silicon oxide at 350 C and boron nitride above 500 C. The segregation of contaminants is responsible for the friction behavior. The amorphous alloys have superior wear resistance to crystalline 304 stainless steel. The relative concentrations of the various constituents at the surfaces of the amorphous alloys are very different from the nominal bulk compositions.

Friction and wear of some ferrous-base metallic glasses

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1984-01-01

Sliding friction experiments, X-ray photoelectron spectroscopy (XPS) analysis, and electron microscopy and diffraction studies were conducted with ferrous base metallic glasses (amorphous alloys) in contact with aluminium oxide at temperatures to 750 C in a vacuum. Sliding friction experiments were also conducted in argon and air atmospheres. The results of the investigation indicate that the coefficient of friction increases with increasing temperature to 350 C in vacuum. The increase in friction is due to an increase in adhesion resulting from surface segregation of boric oxide and/or silicon oxide to the surface of the foil. Above 500 C the coefficient of friction decreased rapidly. The decrease correlates with the segregation of boron nitride to the surface. Contaminants can come from the bulk of the material to the surface upon heating and impart boric oxide and/or silicon oxide at 350 C and boron nitride above 500 C. The segregation of contaminants is responsible for the friction behavior. The amorphous alloys have superior wear resistance to crystalline 304 stainless steel. The relative concentrations of the various constituents at the surfaces of the amorphous alloys are very different from the nominal bulk compositions.

A molecular approach to self-supported cobalt-substituted ZnO materials as remarkably stable electrocatalysts for water oxidation.

PubMed

Pfrommer, Johannes; Lublow, Michael; Azarpira, Anahita; Göbel, Caren; Lücke, Marcel; Steigert, Alexander; Pogrzeba, Martin; Menezes, Prashanth W; Fischer, Anna; Schedel-Niedrig, Thomas; Driess, Matthias

2014-05-12

In regard to earth-abundant cobalt water oxidation catalysts, very recent findings show the reorganization of the materials to amorphous active phases under catalytic conditions. To further understand this concept, a unique cobalt-substituted crystalline zinc oxide (Co:ZnO) precatalyst has been synthesized by low-temperature solvolysis of molecular heterobimetallic Co(4-x)Zn(x) O4 (x = 1-3) precursors in benzylamine. Its electrophoretic deposition onto fluorinated tin oxide electrodes leads after oxidative conditioning to an amorphous self-supported water-oxidation electrocatalyst, which was observed by HR-TEM on FIB lamellas of the EPD layers. The Co-rich hydroxide-oxidic electrocatalyst performs at very low overpotentials (512 mV at pH 7; 330 mV at pH 12), while chronoamperometry shows a stable catalytic current over several hours. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The effect of B 2O 3 addition on the crystallization of amorphous TiO 2-ZrO 2 mixed oxide

NASA Astrophysics Data System (ADS)

Mao, Dongsen; Lu, Guanzhong

2007-02-01

The effect of B 2O 3 addition on the crystallization of amorphous TiO 2-ZrO 2 mixed oxide was investigated by X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG/DTA). TiO 2-ZrO 2 mixed oxide was prepared by co-precipitation method with aqueous ammonia as the precipitation reagent. Boric acid was used as a source of boria, and boria contents varied from 2 to 20 wt%. The results indicate that the addition of small amount of boria (<8 wt%) hinders the crystallization of amorphous TiO 2-ZrO 2 into a crystalline ZrTiO 4 compound, while a larger amount of boria (⩾8 wt%) promotes the crystallization process. FT-IR spectroscopy and 11B MAS NMR results show that tetrahedral borate species predominate at low boria loading, and trigonal borate species increase with increasing boria loading. Thus it is concluded that highly dispersed tetrahedral BO 4 units delay, while a build-up of trigonal BO 3 promote, the crystallization of amorphous TiO 2-ZrO 2 to form ZrTiO 4 crystals.

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2016-02-09

To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

DOE PAGES

Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; ...

2015-12-02

Ti/Al 2O 3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barriermore » properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.« less

Neutron irradiation and high temperature effects on amorphous Fe-based nano-coatings on steel - A macroscopic assessment

NASA Astrophysics Data System (ADS)

Simos, N.; Zhong, Z.; Dooryhee, E.; Ghose, S.; Gill, S.; Camino, F.; Şavklıyıldız, İ.; Akdoğan, E. K.

2017-06-01

The study revealed that loss of ductility in an amorphous Fe-alloy coating on a steel substrate composite structure was essentially prevented from occurring, following radiation with modest neutron doses of ∼2 × 1018 n/cm2. At the higher neutron dose of ∼2 × 1019, macroscopic stress-strain analysis showed that the amorphous Fe-alloy nanostructured coating, while still amorphous, experienced radiation-induced embrittlement, no longer offering protection against ductility loss in the coating-substrate composite structure. Neutron irradiation in a corrosive environment revealed exemplary oxidation/corrosion resistance of the amorphous Fe-alloy coating, which is attributed to the formation of the Fe2B phase in the coating. To establish the impact of elevated temperatures on the amorphous-to-crystalline transition in the amorphous Fe-alloy, electron microscopy was carried out which confirmed the radiation-induced suppression of crystallization in the amorphous Fe-alloy nanostructured coating.

Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.

PubMed

Byun, Hye-Ran; You, Eun-Ah; Ha, Young-Geun

2017-03-01

For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers. The nanoscopic thickness-controllable hybrid dielectrics exhibit the superior capacitance (up to 970 nF/cm 2 ), insulating property (leakage current densities <10 -7 A/cm 2 ), and thermal stability (up to 300 °C) as well as smooth surfaces (root-mean-square roughness <0.35 nm). In addition, the surface energy of the hybrid multilayer dielectrics are easily changed by switching between mono- and bifunctional phosphonic acid-based self-assembled monolayers for compatible fabrication with both organic and amorphous oxide semiconductors. Consequently, the hybrid multilayer dielectrics integrated into TFTs reveal their excellent dielectric functions to achieve high-performance, ultralow-voltage operation (< ± 2 V) for both organic and amorphous oxide TFTs. Because of the easily tunable surface energy, the multifunctional hybrid multilayer dielectrics can also be adapted for various organic and inorganic semiconductors, and metal gates in other device configurations, thus allowing diverse advanced electronic applications including ultralow-power and large-area electronic devices.

Compositional Dependence of Optical and Structural Properties of Nanogranular Mixed ZrO2/ZnO/SnO2 Thin Film

NASA Astrophysics Data System (ADS)

Salari, S.; Ghodsi, F. E.

2018-06-01

A study on the optical properties and photoluminescence (PL) spectra of ternary oxide nanogranular thin films comprising Zr, Zn, and Sn revealed that the change in component ratio could direct the roadmap to improve characteristics of the films. Grazing angle X-ray diffraction analysis showed that incorporation of Sn atoms into the tetragonal structure of Zn/Zr thin film resulted in an amorphous structure. The band gap of film was tunable by precisely controlling the concentration of components. The widening of band gap could correlate to the quantum confinement effect. PL spectra of the composite thin films under excitation at 365 nm showed a sharp red emission with relatively Gaussian line shape, which was intensified in the optimum percentage ratio of 50/30/20. This nearly red emission is attributed to the radiative emission of electrons captured at low-energy traps located near the valence band. An optimum red emission is strongly desirable for use in white LEDs. The comparative study on FTIR spectra of unary, binary, and ternary thin films confirmed successful composition of three different metal oxides in ternary thin films. Detailed investigation on FTIR spectra of ternary compounds revealed that the quenching in PL emission at higher percentage of Sn was originally due to the hydroxyl group.

Nanostructured manganese oxides as highly active water oxidation catalysts: a boost from manganese precursor chemistry.

PubMed

Menezes, Prashanth W; Indra, Arindam; Littlewood, Patrick; Schwarze, Michael; Göbel, Caren; Schomäcker, Reinhard; Driess, Matthias

2014-08-01

We present a facile synthesis of bioinspired manganese oxides for chemical and photocatalytic water oxidation, starting from a reliable and versatile manganese(II) oxalate single-source precursor (SSP) accessible through an inverse micellar molecular approach. Strikingly, thermal decomposition of the latter precursor in various environments (air, nitrogen, and vacuum) led to the three different mineral phases of bixbyite (Mn2 O3 ), hausmannite (Mn3 O4 ), and manganosite (MnO). Initial chemical water oxidation experiments using ceric ammonium nitrate (CAN) gave the maximum catalytic activity for Mn2 O3 and MnO whereas Mn3 O4 had a limited activity. The substantial increase in the catalytic activity of MnO in chemical water oxidation was demonstrated by the fact that a phase transformation occurs at the surface from nanocrystalline MnO into an amorphous MnOx (1

Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

PubMed

Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

2014-12-01

The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

A graphene oxide-carbon nanotube grid for high-resolution transmission electron microscopy of nanomaterials.

PubMed

Zhang, Lina; Zhang, Haoxu; Zhou, Ruifeng; Chen, Zhuo; Li, Qunqing; Fan, Shoushan; Ge, Guanglu; Liu, Renxiao; Jiang, Kaili

2011-09-23

A novel grid for use in transmission electron microscopy is developed. The supporting film of the grid is composed of thin graphene oxide films overlying a super-aligned carbon nanotube network. The composite film combines the advantages of graphene oxide and carbon nanotube networks and has the following properties: it is ultra-thin, it has a large flat and smooth effective supporting area with a homogeneous amorphous appearance, high stability, and good conductivity. The graphene oxide-carbon nanotube grid has a distinct advantage when characterizing the fine structure of a mass of nanomaterials over conventional amorphous carbon grids. Clear high-resolution transmission electron microscopy images of various nanomaterials are obtained easily using the new grids.

Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp

2015-09-28

Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thinmore » film transistors.« less

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitoma, Nobuhiko, E-mail: MITOMA.Nobuhiko@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Kizu, Takio; Lin, Meng-Fang

The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

Synthesis and properties of nickel cobalt boron nanoparticles

NASA Astrophysics Data System (ADS)

Patel, J.; Pankhurst, Q. A.; Parkin, I. P.

2005-01-01

Amorphous cobalt nickel boride nanoparticles were synthesised by chemical reduction synthesis in aqueous solution. Careful control of synthesis conditions and post reaction oxidation enabled the nanoparticles to be converted into a core-shell structure comprising of an amorphous Co-Ni-B core and an outer metal oxide sheet. These particles had interesting magnetic properties including saturation magnetisations and coercivities of the order of 80 emu/g and 170 Oe respectively, making them suitable for a potential use as an exchange-pinned magnetic material.

Micro/nanostructured porous Fe-Ni binary oxide and its enhanced arsenic adsorption performances.

PubMed

Liu, Shengwen; Kang, Shenghong; Wang, Guozhong; Zhao, Huijun; Cai, Weiping

2015-11-15

A simple method is presented to synthesize micro/nano-structured Fe-Ni binary oxides based on co-precipitation and subsequent calcination. It has been found that the Fe-Ni binary oxides are composed of the porous microsized aggregates built with nanoparticles. When the atomic ratio of Fe to Ni is 2 to 1 the binary oxide is the micro-scaled aggregates consisting of the ultrafine NiFe2O4 nanoparticles with 3-6nm in size, and shows porous structure with pore diameter of 3nm and a specific surface area of 245m(2)g(-1). Such material is of abundant surface functional groups and has exhibited high adsorption performance to As(III) and As(V). The kinetic adsorption can be described by pseudo-second order model and the isothermal adsorption is subject to Langmuir model. The maximum adsorption capacity on such Fe-Ni porous binary oxide is up to 168.6mgg(-1) and 90.1mgg(-1) for As(III) and As(V), respectively, which are much higher than the arsenic adsorption capacity for most commercial adsorbents. Such enhanced adsorption ability for this material is mainly attributed to its porous structure and high specific surface area as well as the abundant surface functional groups. Further experiments have revealed that the influence of the anions such as sulfate, carbonate, and phosphate, which commonly co-exist in water, on the arsenic adsorption is insignificant, exhibiting strong adsorption selectivity to arsenic. This micro/nano-structured porous Fe-Ni binary oxide is hence of good practicability to be used as a highly efficient adsorbent for arsenic removal from the real arsenic-contaminated waters. Copyright © 2015 Elsevier Inc. All rights reserved.

Analysis of high quality superconducting resonators: consequences for TLS properties in amorphous oxides

NASA Astrophysics Data System (ADS)

Burnett, J.; Faoro, L.; Lindström, T.

2016-04-01

1/f noise caused by microscopic two-level systems (TLS) is known to be very detrimental to the performance of superconducting quantum devices but the nature of these TLS is still poorly understood. Recent experiments with superconducting resonators indicates that interaction between TLS in the oxide at the film-substrate interface is not negligible. Here we present data on the loss and 1/f frequency noise from two different Nb resonators with and without Pt capping and discuss what conclusions can be drawn regarding the properties of TLS in amorphous oxides. We also estimate the concentration and dipole moment of the TLS.

Disordered multihyperuniformity derived from binary plasmas

NASA Astrophysics Data System (ADS)

Lomba, Enrique; Weis, Jean-Jacques; Torquato, Salvatore

2018-01-01

Disordered multihyperuniform many-particle systems are exotic amorphous states that allow exquisite color sensing capabilities due to their anomalous suppression of density fluctuations for distinct subsets of particles, as recently evidenced in photoreceptor mosaics in avian retina. Motivated by this biological finding, we present a statistical-mechanical model that rigorously achieves disordered multihyperuniform many-body systems by tuning interactions in binary mixtures of nonadditive hard-disk plasmas. We demonstrate that multihyperuniformity competes with phase separation and stabilizes a clustered phase. Our work provides a systematic means to generate disordered multihyperuniform solids, and hence lays the groundwork to explore their potentially unique photonic, phononic, electronic, and transport properties.

Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

NASA Technical Reports Server (NTRS)

Thakoor, A. P.; Lamb, J. L.; Moopenn, A.; Khanna, S. K.

1987-01-01

A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

Evaluation of the effect of sulfate, alkalinity and disinfector on iron release of iron pipe and iron corrosion scale characteristics under water quality changing condition using response surface methodology

NASA Astrophysics Data System (ADS)

Yang, Fan; Shi, Baoyou; Zhang, Weiyu; Guo, Jianbo; Wu, Nana; Liu, Xinyuan

2018-02-01

The response surface methodology (RSM), particularly Box-Behnken design model, was used in this study to evaluate the sulfate, alkalinity and free chlorine on iron release of pipe with groundwater supply history and its iron corrosion scale characteristics under water quality changing experiment. The RSM results together with response surface contour plots indicated that the iron release of pipe section reactors was positively related with Larson Ratio and free chlorine. The thin Corrosion scales with groundwater supply history upon collection site contained Fe3O4 (18%), α-FeOOH (64%), FeCO3 (9%), β-FeOOH (8%) and γ-FeOOH (5%), besides their averaged amorphous iron oxide content was 13.6%. After the RSM water quality changing experiment, Fe3O4, amorphous iron oxide and intermediate iron products (FeCO3, Green Rust (GR)) content on scale of Cl2Rs increased, while their α-FeOOH contents decreased and β-FeOOH disappeared. The high iron released Cl2Rs receiving higher LR water (1.40-2.04) contained highest FeCO3 (20%) and amorphous iron oxide (42%), while the low iron release Cl2Rs receiving lower LR water (0.52-0.73) had higher GR(6.5%) and the amorphous iron oxide (23.7%). In high LR water (>0.73), the thin and non-protective corrosion scale containing higher amorphous iron oxide, Fe(II) derived from new produced Fe3O4 or FeCO3 or GR was easy for oxidants and sulfate ions penetration, and had higher iron release. However the same unstable corrosion scale didn’t have much iron release in low LR water (≤0.73). RSM experiment indicated that iron release of these unstable corrosion scales had close relationship with water quality (Larson Ratio and disinfectant). Optimizing the water quality of new source water and using reasonable water purification measures can help to eliminate the red water case.

Buffer layers on metal alloy substrates for superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

2004-06-29

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

NASA Astrophysics Data System (ADS)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-01-01

Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

Kinetic Monte Carlo (kMC) simulation of carbon co-implant on pre-amorphization process.

PubMed

Park, Soonyeol; Cho, Bumgoo; Yang, Seungsu; Won, Taeyoung

2010-05-01

We report our kinetic Monte Carlo (kMC) study of the effect of carbon co-implant on the pre-amorphization implant (PAL) process. We employed BCA (Binary Collision Approximation) approach for the acquisition of the initial as-implant dopant profile and kMC method for the simulation of diffusion process during the annealing process. The simulation results implied that carbon co-implant suppresses the boron diffusion due to the recombination with interstitials. Also, we could compare the boron diffusion with carbon diffusion by calculating carbon reaction with interstitial. And we can find that boron diffusion is affected from the carbon co-implant energy by enhancing the trapping of interstitial between boron and interstitial.

Phonon Dispersion in Amorphous Ni-Alloys

NASA Astrophysics Data System (ADS)

Vora, A. M.

2007-06-01

The well-known model potential is used to investigate the longitudinal and transverse phonon dispersion curves for six Ni-based binary amorphous alloys, viz. Ni31Dy69, Ni33Y67, Ni36Zr64, Ni50Zr50, Ni60 Nb40, and Ni81B19. The thermodynamic and elastic properties are also computed from the elastic limits of the phonon dispersion curves. The theoretical approach given by Hubbard-Beeby is used in the present study to compute the phonon dispersion curves. Five local field correction functions proposed by Hartree, Taylor, Ichimaru-Utsumi, Farid et al. and Sarkar et al. are employed to see the effect of exchange and correlation in the aforesaid properties.

A Structural Molar Volume Model for Oxide Melts Part I: Li2O-Na2O-K2O-MgO-CaO-MnO-PbO-Al2O3-SiO2 Melts—Binary Systems

NASA Astrophysics Data System (ADS)

Thibodeau, Eric; Gheribi, Aimen E.; Jung, In-Ho

2016-04-01

A structural molar volume model was developed to accurately reproduce the molar volume of molten oxides. As the non-linearity of molar volume is related to the change in structure of molten oxides, the silicate tetrahedral Q-species, calculated from the modified quasichemical model with an optimized thermodynamic database, were used as basic structural units in the present model. Experimental molar volume data for unary and binary melts in the Li2O-Na2O-K2O-MgO-CaO-MnO-PbO-Al2O3-SiO2 system were critically evaluated. The molar volumes of unary oxide components and binary Q-species, which are model parameters of the present structural model, were determined to accurately reproduce the experimental data across the entire binary composition in a wide range of temperatures. The non-linear behavior of molar volume and thermal expansivity of binary melt depending on SiO2 content are well reproduced by the present model.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varela, Maria; Scigaj, Mateusz; Gazquez, Jaume

Interfaces between (110) and (111)SrTiO 3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO 3 (a-LAO), Y:ZrO 2 (a-YSZ), and SrTiO 3 (a-STO) become conducting above a critical thickness t c. Here we show that t c for a-LAO does not depend on the substrate orientation, i.e. t c (a-LAO/(110)STO) ≈ t c(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: t c(a-LAO/(110)STO) < t c(a-YSZ/(110)STO) < t c(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather thanmore » orientation-dependent enthalpy vacancy formation and diffusion. Furthermore, scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces.« less

Influences of ultra-thin Ti seed layers on the dewetting phenomenon of Au films deposited on Si oxide substrates

NASA Astrophysics Data System (ADS)

Kamiko, Masao; Kim, So-Mang; Jeong, Young-Seok; Ha, Jae-Ho; Koo, Sang-Mo; Ha, Jae-Geun

2018-05-01

The influences of a Ti seed layer (1 nm) on the dewetting phenomenon of Au films (5 nm) grown onto amorphous SiO2 substrates have been studied and compared. Atomic force microscopy results indicated that the introduction of Ti between the substrate and Au promoted the dewetting phenomenon. X-ray diffraction measurements suggested that the initial deposition of Ti promoted crystallinity of Au. A series of Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that Ti transformed to a Ti oxide layer by reduction of the amorphous SiO2 substrate surface, and that the Ti seed layer remained on the substrate, without going through the dewetting process during annealing. We concluded that the enhancement of Au dewetting and the improvement in crystallinity of Au by the insertion of Ti could be attributed to the fact that Au location was changed from the surface of the amorphous SiO2 substrate to that of the Ti oxide layer.

Co3 O4 Nanowire Arrays toward Superior Water Oxidation Electrocatalysis in Alkaline Media by Surface Amorphization.

PubMed

Zhou, Dan; He, Liangbo; Zhang, Rong; Hao, Shuai; Hou, Xiandeng; Liu, Zhiang; Du, Gu; Asiri, Abdullah M; Zheng, Chengbin; Sun, Xuping

2017-11-07

It is highly desirable to develop a simple, fast and straightforward method to boost the alkaline water oxidation of metal oxide catalysts. In this communication, we report our recent finding that the generation of amorphous Co-borate layer on Co 3 O 4 nanowire arrays supported on Ti mesh (Co 3 O 4 @Co-Bi NA/TM) leads to significantly boosted OER activity. The as-prepared Co 3 O 4 @Co-Bi NA/TM demands overpotential of 304 mV to drive a geometrical current density of 20 mA cm -2 in 1.0 M KOH, which is 109 mV less than that for Co 3 O 4 NA/TM, with its catalytic activity being preserved for at least 20 h. It suggests that the existence of amorphous Co-Bi layer promotes more CoO x (OH) y generation on Co 3 O 4 surface. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Amorphous nickel incorporated tin oxide thin film transistors

NASA Astrophysics Data System (ADS)

Yang, Jianwen; Ren, Jinhua; Lin, Dong; Han, Yanbing; Qu, Mingyue; Pi, Shubin; Fu, Ruofan; Zhang, Qun

2017-09-01

Nickel as a dopant has been proposed to suppress excess carrier concentration in n-type tin oxide based thin film transistors (TFTs). The influences of Ni content on nickel doped tin oxide (TNO) thin films and their corresponding TFTs were investigated with experimental results showing that the TNO thin films are amorphous. Through the comparison of the transfer characteristic curves of the TNO TFTs with different Ni contents, it was observed that Ni doping is useful to improve the performance of SnO2-based TFTs by suppressing the off-state current and shifting the threshold voltage to 0 V. The amorphous TNO TFT with 3.3 at.% Ni content shows optimum performance, with field effect mobility of 8.4 cm2 V-1 s-1, saturation mobility of 6.8 cm2 V-1 s-1, subthreshold swing value of 0.8 V/decade, and an on-off current ratio of 2.1  ×  107. Nevertheless, the bias stress stability of SnO2-based TFTs deteriorate.

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switchingmore » using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.« less

Toward Adequate Operation of Amorphous Oxide Thin-Film Transistors for Low-Concentration Gas Detection.

PubMed

Kim, Kyung Su; Ahn, Cheol Hyoun; Jung, Sung Hyeon; Cho, Sung Woon; Cho, Hyung Koun

2018-03-28

We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-IGZO) as a channel and a sensing layer for low-concentration NO 2 gas detection. Although amorphous oxide layers have a restricted surface area when reacting with NO 2 gas, such TFT sensors have incomparable advantages in the aspects of electrical stability, large-scale uniformity, and the possibility of miniaturization. The a-IGZO thin films do not possess typical reactive sites and grain boundaries, so that the variation in drain current of the TFTs strictly originates from oxidation reaction between channel surface and NO 2 gas. Especially, the sensing data obtained from the variation rate of drain current makes it possible to monitor efficiently and quickly the variation of the NO 2 concentration. Interestingly, we found that enhancement-mode TFT (EM-TFT) allows discrimination of the drain current variation rate at NO 2 concentrations ≤10 ppm, whereas a depletion-mode TFT is adequate for discriminating NO 2 concentrations ≥10 ppm. This discrepancy is attributed to the ratio of charge carriers contributing to gas capture with respect to total carriers. This capacity for the excellent detection of low-concentration NO 2 gas can be realized through (i) three-terminal TFT gas sensors using amorphous oxide, (ii) measurement of the drain current variation rate for high selectivity, and (iii) an EM mode driven by tuning the electrical conductivity of channel layers.

Origin of the Mariano Lake uranium deposit, McKinley County, New Mexico

USGS Publications Warehouse

Fishman, Neil S.; Reynolds, Richard L.

1982-01-01

The Mariano Lake uranium deposit, hosted by the Brushy Basin Member of the Jurassic Morrison Formation, occurs in the trough of an east-west trending syncline at the western end of the Smith Lake-Mariano Lake group of uranium deposits near Crownpoint, New Mexico. The orebody, which contains abundant amorphous organic material, is situated on the reduced side of a regional reduction-oxidation (redox) interface. The presence of amorphous organic material suggests the orebody may represent a tabular (primary) deposit, whereas the close proximity of the orebody to the redox interface is suggestive that uranium was secondarily redistributed by oxidative processes from pre-existing tabular orebodies. Uranium contents correlate positively with both organic carbon and vanadium contents. Petrographic evidence and scanning electron microscope-energy dispersive analyses point to uranium residence in the epigentically introduced amorphous organic material, which coats detrital grains and fills voids. Uranium mineralization was preceded by the following diagenetic alterations: precipitation of pyrite (d34S values ranging from-11.0 to-38.2 per mil); precipitation of mixed-layer smectite-illite clays; partial dissolution of some of the detrital feldspar population; and precipitation of quartz and adularia overgrowths. Alterations associated with uranium mineralization include emplacement of amorphous organic material (possibly uranium bearing); destruction of detrital iron-titanium oxide grains; coprecipitation of chlorite and microcrystalline quartz, and precipitation of pyrite and marcasite (d34S values for these sulfides ranging from -29.4 to -41.6 per mil). After mineralization, calcite, dolomite, barite, and kaolinite precipitated, and authigenic iron disulfides were replaced by ferric oxides and hydroxides. Geochemical data (primarily the positive correlation of uranium content to both organic carbon and vanadium contents) and petrographic observations (epigentically introduced amorphous organic matter and uranium residence in this organic matter) indicate that the Mariano Lake orebody is a tabular-type uranium deposit. Oxidative processes have not noticeably redistributed and reconcentrated primary uranium in the immediate vicinity of the deposit nor have they greatly modified geochemical characteristics in the ore. Preservation of the Mariano Lake deposit may not only be related to its position along the synclinal trough, where oxidative destruction of the orebody has been inhibited by stagnation of oxidizing ground waters by the structure, but also due to the deflection of ground waters (resulting from low orebody porosity) around the orebody.

Synthesis and characterization of lithium intercalation electrodes based on iron oxide thin films

NASA Astrophysics Data System (ADS)

Sarradin, J.; Guessous, A.; Ribes, M.

Sputter-deposited iron oxide thin films are investigated as a possible negative electrode for rocking-chair microbatteries. Experimental conditions related to the manufacturing of amorphous thin films suitable to a large number of available intercalation sites are described. Structural and physical properties of the thin layer films are presented. The conductivities of the amorphous thin films were found to be very high compared with those of the respective crystalline forms. Regarding the electrochemical behaviour, Fe 2O 3-based thin films electrodes are able to store and reversibly exchange lithium ions. At a C/2 charge/discharge rate with 100% depth-of-discharge (DOD), the specific capacity of these amorphous thin film electrodes remains almost constant and close to 330 Ah/kg after more than 120 charge/discharge cycles.

Electrocatalyst for alcohol oxidation in fuel cells

DOEpatents

Adzic, Radoslav R.; Marinkovic, Nebojsa S.

2001-01-01

Binary and ternary electrocatalysts are provided for oxidizing alcohol in a fuel cell. The binary electrocatalyst includes 1) a substrate selected from the group consisting of NiWO.sub.4 or CoWO.sub.4 or a combination thereof, and 2) Group VIII noble metal catalyst supported on the substrate. The ternary electrocatalyst includes 1) a substrate as described above, and 2) a catalyst comprising Group VIII noble metal, and ruthenium oxide or molybdenum oxide or a combination thereof, said catalyst being supported on said substrate.

Arsenic Sorption on TiO2 Nanoparticles: Size And Crystallinity Effects

EPA Science Inventory

Single solute As (III) and As (V) sorption on nano-sized amorphous and crystalline TiO₂ was investigated to determine: size and crystallinity effects on arsenic sorption capacities, possible As (III) oxidation, and the nature of surface complexes. Amorphous and cryst...

Ambient-temperature NO oxidation over amorphous CrOx-ZrO 2 mixed oxide catalysts: Significant promoting effect of ZrO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Aiyong; Guo, Yanglong; Gao, Feng

2017-03-01

Three series of Cr-based mixed oxides (Cr-Co, Cr-Fe, and Cr-Ni oxides) with high specific surface areas and amorphous textures are synthesized using a novel sol-gel method. These mixed oxides, in comparison to their pure metal oxide (CrOx, Co3O4, FeOx and NiO) counterparts, display enhanced performance for catalytic oxidation of low-concentration NO at room temperature. Over best performing catalysts, 100% NO conversion can be maintained up to 30 h of operation at a high space velocity of 45,000 ml g-1 h-1. The amorphous structure is found to be critical for these catalysts to maintain high activity and durability. Cr/M (M=Co, Femore » and Ni) molar ratio, nitrate precursor decomposition temperature and catalyst calcination temperature are important criteria for the synthesis of the highly active catalysts. This work was supported by National Basic Research Program of China (2013CB933200), National Natural Science Foundation of China (21577035, 21577034), Commission of Science and Technology of Shanghai Municipality (15DZ1205305) and 111 Project (B08021). Aiyong Wang gratefully acknowledges the China Scholarship Council for the Joint-Training Scholarship Program with the Pacific Northwest National Laboratory (PNNL). PNNL is operated for the U.S. Department of Energy (DOE) by Battelle. FG and CHFP are supported by the U.S. DOE/Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Office.« less

Effect of annealing temperature on optical properties of binary zinc tin oxide nano-composite prepared by sol-gel route using simple precursors: structural and optical studies by DRS, FT-IR, XRD, FESEM investigations.

PubMed

Habibi, Mohammad Hossein; Mardani, Maryam

2015-02-25

Binary zinc tin oxide nano-composite was synthesized by a facile sol-gel method using simple precursors from the solutions consisting of zinc acetate, tin(IV) chloride and ethanol. Effect of annealing temperature on optical and structural properties was investigated using X-ray diffraction (XRD), diffuse reflectance spectra (DRS), field emission scanning electron microscopy (FESEM) and Fourier transform infrared spectroscopy (FTIR). XRD results revealed the existence of the ZnO and SnO2 phases. FESEM results showed that binary zinc tin oxide nano-composites ranges from 56 to 60 nm in diameter at 400°C and 500°C annealing temperatures respectively. The optical band gap was increased from 2.72 eV to 3.11 eV with the increasing of the annealing temperature. FTIR results confirmed the presence of zinc oxide and tin oxide and the broad absorption peaks at 3426 and 1602 cm(-1) can be ascribed to the vibration of absorptive water, and the absorption peaks at 546, 1038 and 1410 cm(-1) are due to the vibration of Zn-O or Sn-O groups in binary zinc tin oxide. Copyright © 2014 Elsevier B.V. All rights reserved.

Neutron irradiation and high temperature effects on amorphous Fe-based nano-coatings on steel – A macroscopic assessment

DOE PAGES

Simos, N.; Zhong, Z.; Dooryhee, E.; ...

2017-03-23

Here, this study revealed that loss of ductility in an amorphous Fe-alloy coating on a steel substrate composite structure was essentially prevented from occurring, following radiation with modest neutron doses of ~2 x 10 18 n/cm 2. At the higher neutron dose of ~2 x 10 19, macroscopic stress-strain analysis showed that the amorphous Fe-alloy nanostructured coating, while still amorphous, experienced radiation-induced embrittlement, no longer offering protection against ductility loss in the coating-substrate composite structure. Neutron irradiation in a corrosive environment revealed exemplary oxidation/corrosion resistance of the amorphous Fe-alloy coating, which is attributed to the formation of the Fe 2Bmore » phase in the coating. To establish the impact of elevated temperatures on the amorphous-to-crystalline transition in the amorphous Fe-alloy, electron microscopy was carried out which confirmed the radiation-induced suppression of crystallization in the amorphous Fe-alloy nanostructured coating.« less

Transport properties of Sb doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Usha, Philipose

2011-10-01

n-type Si nanowires were synthesized at ambient pressure using SiCl4 as Si source and Sb source as the dopant. Sb doping of 3-4 wt % was achieved through a post growth diffusion technique. The nanowires were found to have an amorphous oxide shell that developed post-growth; the thickness of the shell is estimated to be about 3-4 nm. The composition of the amorphous shell covering the crystalline Si core was determined by Raman spectroscopy, with evidence that the shell was an amorphous oxide layer. Optical characterization of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell covering the Si nanowire core. Etching of the oxide shell was found to decrease the intensity of this green emission. A single undoped Si nanowire contacted in an FET type configuration was found to be p-type with channel mobility of 20 cm^2V-1S-1. Sb doped Si nanowires exhibited n-type behavior, compensating for the holes in the undoped nanowire. The doped nanowires had carrier mobility and concentration of 160 cm^2V-1S-1 and 9.6 x 10^18cm-3 respectively.

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.

PubMed

Sheng, Jiazhen; Lee, Hwan-Jae; Oh, Saeroonter; Park, Jin-Seong

2016-12-14

Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H 2 O 2 ) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In 2 O 3 ) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In 2 O 3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 °C. We propose growth temperature-dependent surface reactions during the In 2 O 3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm 2 V -1 s -1 and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications.

Acceleration of Crystal Growth of Amorphous Griseofulvin by Low-Concentration Poly(ethylene oxide): Aspects of Crystallization Kinetics and Molecular Mobility.

PubMed

Shi, Qin; Zhang, Chen; Su, Yuan; Zhang, Jie; Zhou, Dongshan; Cai, Ting

2017-07-03

This study aims to investigate the crystallization behavior and molecular dynamics of amorphous griseofulvin (GSF) in the presence of low-concentration poly(ethylene oxide) (PEO). We observe that the addition of 3% w/w PEO remarkably increases the crystal growth rate of GSF by two orders of magnitude in both the supercooled liquid and glassy states. The liquid dynamics of amorphous GSF in the presence and absence of PEO are characterized by dielectric spectroscopy. With an increase of the PEO content, the α-relaxation times of the systems decrease, indicating the increase of global molecular mobility. The couplings between molecular mobility and crystallization kinetics of GSF systems show strong time-dependences below T g . The overlapping of α-relaxation times of GSF in presence and absence of PEO as a function of T g /T suggest the "plasticization" effect of PEO additives. However, the crystallization kinetics of amorphous GSF containing low-concentration PEO do not overlap with those of pure GSF on a T g /T scale. The remarkable accelerating effect of crystal growth of amorphous GSF by low-concentration PEO can be partially attributed to the increase of global mobility. The high segmental mobility of PEO is expected to strongly affect the crystal growth rates of GSF. These findings are relevant for understanding and predicting the physical stability of amorphous pharmaceutical solid dispersions.

Synthesis and characterization of binary titania-silica mixed oxides

NASA Astrophysics Data System (ADS)

Budhi, Sridhar

A series of binary titania-silica mixed oxides were synthesized by the sol-gel method at room temperature. The mixed oxides were prepared that involved the hydrolysis of titanium isopropoxide and tetraethylorthosilicate (TEOS) by co-solvent induced gelation usually in acidic media. The resulting gels were dried, calcined and then characterized by powder X-ray diffractometric studies, nitrogen sorption studies (at 77K), diffuse reflectance spectroscopy, Raman microscopy and transmission electron microscopic studies. The nitrogen sorption studies indicate that the specific surface areas, pore volume, pore diameter and pore size distribution of the mixed oxides were substantially enhanced when non-polar solvents such as toluene, p-xylene or mesitylene were added as co-solvents to the synthesis gel. Transmission electron microscopic (TEM) studies confirm the results obtained from the nitrogen sorption studies. Our results indicate that we can obtain binary metal oxides possessing high surface area and large pore volumes with tunable pore size distribution at room temperature. Photocatalytic evaluation of the mixed oxides is currently in progress.

Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

NASA Astrophysics Data System (ADS)

Gelinck, G. H.; van Breemen, A. J. J. M.; Cobb, B.

2015-03-01

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

Laboratory Experiments to Study Spherical, Iron Oxide Concretion Growth Without Solid Nuclei: Implications for Understanding Meridiani "Blueberries"

NASA Astrophysics Data System (ADS)

Ormö, J.; Souza-Egipsy, V.; Chan, M. A.; Park, A. J.; Stich, M.; Komatsu, G.

2006-03-01

Spherical hematite concretions can form without a nucleus. Self-organized zones of super-saturated solution cause spherical precipitates of amorphous iron-hydroxide. Diffusion of Fe ions towards the outer perimeter of the amorphous sphere forms a rind, which then grows inwards.

The influence of secondary processing on the structural relaxation dynamics of fluticasone propionate.

PubMed

Depasquale, Roberto; Lee, Sau L; Saluja, Bhawana; Shur, Jagdeep; Price, Robert

2015-06-01

This study investigated the structural relaxation of micronized fluticasone propionate (FP) under different lagering conditions and its influence on aerodynamic particle size distribution (APSD) of binary and tertiary carrier-based dry powder inhaler (DPI) formulations. Micronized FP was lagered under low humidity (LH 25 C, 33% RH [relative humidity]), high humidity (HH 25°C, 75% RH) for 30, 60, and 90 days, respectively, and high temperature (HT 60°C, 44% RH) for 14 days. Physicochemical, surface interfacial properties via cohesive-adhesive balance (CAB) measurements and amorphous disorder levels of the FP samples were characterized. Particle size, surface area, and rugosity suggested minimal morphological changes of the lagered FP samples, with the exception of the 90-day HH (HH90) sample. HH90 FP samples appeared to undergo surface reconstruction with a reduction in surface rugosity. LH and HH lagering reduced the levels of amorphous content over 90-day exposure, which influenced the CAB measurements with lactose monohydrate and salmeterol xinafoate (SX). CAB analysis suggested that LH and HH lagering led to different interfacial interactions with lactose monohydrate but an increasing adhesive affinity with SX. HT lagering led to no detectable levels of the amorphous disorder, resulting in an increase in the adhesive interaction with lactose monohydrate. APSD analysis suggested that the fine particle mass of FP and SX was affected by the lagering of the FP. In conclusion, environmental conditions during the lagering of FP may have a profound effect on physicochemical and interfacial properties as well as product performance of binary and tertiary carrier-based DPI formulations.

Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane

NASA Astrophysics Data System (ADS)

Hobler, Gerhard

2015-06-01

Many experiments indicate the importance of stress and stress relaxation upon ion implantation. In this paper, a model is proposed that is capable of describing ballistic effects as well as stress relaxation by viscous flow. It combines atomistic binary collision simulation with continuum mechanics. The only parameters that enter the continuum model are the bulk modulus and the radiation-induced viscosity. The shear modulus can also be considered but shows only minor effects. A boundary-fitted grid is proposed that is usable both during the binary collision simulation and for the spatial discretization of the force balance equations. As an application, the milling of a slit into an amorphous silicon membrane with a 30 keV focused Ga beam is studied, which demonstrates the relevance of the new model compared to a more heuristic approach used in previous work.

First principles prediction of amorphous phases using evolutionary algorithms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nahas, Suhas, E-mail: shsnhs@iitk.ac.in; Gaur, Anshu, E-mail: agaur@iitk.ac.in; Bhowmick, Somnath, E-mail: bsomnath@iitk.ac.in

2016-07-07

We discuss the efficacy of evolutionary method for the purpose of structural analysis of amorphous solids. At present, ab initio molecular dynamics (MD) based melt-quench technique is used and this deterministic approach has proven to be successful to study amorphous materials. We show that a stochastic approach motivated by Darwinian evolution can also be used to simulate amorphous structures. Applying this method, in conjunction with density functional theory based electronic, ionic and cell relaxation, we re-investigate two well known amorphous semiconductors, namely silicon and indium gallium zinc oxide. We find that characteristic structural parameters like average bond length and bondmore » angle are within ∼2% of those reported by ab initio MD calculations and experimental studies.« less

Pulsed laser deposited metal oxide thin films mediated controlled adsorption of proteins

NASA Astrophysics Data System (ADS)

Kim, Se Jin

Several metal oxide thin films were grown on Si substrate by pulsed laser deposition for controlling adsorption of proteins. No intentional heating of substrate and introduction of oxygen gas during growth were employed. Additionally, fibrinogen, bovine serum albumin (BSA), and lysozyme were used as model protein in this study. The film properties such as cyratllinity, surface roughness, surface electrical charge and chemistry were investigated by many techniques in order to obtain the relationship with protein adsorption. Firstly, as grown Ta2O5 and ZnO thin film were used to study the effects of surface charge on the behaviors of BSA and lysozyme adsorption. The protein thickness results by ellipsometry showed that negatively charged Ta2O5 had a stronger affinity to positively charged lysozyme, while positively charged ZnO had a stronger affinity to negatively charged BSA. The results confirmed electrostatic interaction due to surface charge is one of main factors for determining adsorption of proteins. Furthermore, annealing studies were performed by heat treatment of as grown Ta2O5 and ZnO at 800°C in air ambience. Annealed Ta2O5 thin film had almost wetting property (from 10.02° to less than 1˜2°) and the change of cystallinity (from amorphous to cyrsalline) while annealed ZnO thin film had a reduced contact angle (from 75.65° to 39.41°) and remained to crystalline structure. The fibrinogen thickness on annealed Ta2O5 film was increased compared with as grown sample, while heat treated ZnO film showed much reduction of fibrinogen adsorption. Binary Ta-Zn oxide thin films (TZ) were grown by preparing PLD target composed of 50 wt% Ta2O5 and 50 wt% ZnO. This binary film had IEP pH 7.1 indicating nearly neutral charge in pH 7.4 PBS solution, and hydrophilic property. Ellipsometrical results showed that TZ film had the lowest fibrinogen, BSA and lysozyme thickness after 120 min adsorption compared with Ta2O5 and ZnO. Other samples, bilayer oxide films in which Ta2O5 and ZnO coexist were also employed to study adsorption behaviors. Especially, Ta2O 5-based bilayer films revealed zero adsorption of lysozyme.

First-principles study of the amorphous In3SbTe2 phase change compound

NASA Astrophysics Data System (ADS)

Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

2013-11-01

Ab initio molecular dynamics simulations based on density functional theory were performed to generate amorphous models of the phase change compound In3SbTe2 by quenching from the melt. In-Sb and In-Te are the most abundant bonds with only a minor fraction of Sb-Te bonds. The bonding geometry in the amorphous phase is, however, strongly dependent on the density in the range 6.448-5.75 g/cm3 that we investigated. While at high density the bonding geometry of In atoms is mostly octahedral-like as in the cubic crystalline phase of the ternary compound In3SbTe2, at low density we observed a sizable fraction of tetrahedral-like geometries similar to those present in the crystalline phase of the two binary compounds InTe and InSb that the ternary system can be thought to be made of. We show that the different ratio between octahedral-like and tetrahedral-like bonding geometries has fingerprints in the optical and vibrational spectra.

Electrical and optical properties of binary CNx nanocone arrays synthesized by plasma-assisted reaction deposition.

PubMed

Liu, Xujun; Guan, Leilei; Fu, Xiaoniu; Zhao, Yu; Wu, Jiada; Xu, Ning

2014-03-21

Light-absorbing and electrically conductive binary CNx nanocone (CNNC) arrays have been fabricated using a glow discharge plasma-assisted reaction deposition method. The intact CNNCs with amorphous structure and central nickel-filled pipelines could be vertically and neatly grown on nickel-covered substrates according to the catalyst-leading mode. The morphologies and composition of the as-grown CNNC arrays can be well controlled by regulating the methane/nitrogen mixture inlet ratio, and their optical absorption and resistivity strongly depend on their morphologies and composition. Beside large specific surface area, the as-grown CNNC arrays demonstrate high wideband absorption, good conduction, and nice wettability to polymer absorbers.

The composition of secondary amorphous phases under different environmental conditions

NASA Astrophysics Data System (ADS)

Smith, R.; Rampe, E. B.; Horgan, B. H. N.; Dehouck, E.; Morris, R. V.

2017-12-01

X-ray diffraction (XRD) patterns measured by the CheMin instrument on the Mars Science Laboratory Curiosity rover demonstrate that amorphous phases are major components ( 15-60 wt%) of all rock and soil samples in Gale Crater. The nature of these phases is not well understood and could be any combination of primary (e.g., glass) and secondary (e.g., silica, ferrihydrite) phases. Secondary amorphous phases are frequently found as weathering products in soils on Earth, but these materials remain poorly characterized. Here we study a diverse suite of terrestrial samples including: sediments from recently de-glaciated volcanoes (Oregon), modern volcanic soils (Hawaii), and volcanic paleosols (Oregon) in order to determine how formation environment, climate, and diagenesis affect the abundance and composition of amorphous phases. We combine bulk XRD mineralogy with bulk chemical compositions (XRF) to calculate the abundance and bulk composition of the amorphous materials in our samples. We then utilize scanning transmission electron microscopy (STEM) and energy dispersive x-ray spectroscopy (EDS) to study the composition of individual amorphous phases at the micrometer scale. XRD analyses of 8 samples thus far indicate that the abundance of amorphous phases are: modern soils (20-80 %) > paleosols (15-40 %) > glacial samples (15-30 %). Initial calculations suggest that the amorphous components consist primarily of SiO2, Al2O3, TiO2, FeO and Fe2O3, with minor amounts of other oxides (e.g., MgO, CaO, Na2O). Compared to their respective crystalline counterparts, calculations indicate bulk amorphous components enriched in SiO2 for the glacial sample, and depleted in SiO2 for the modern soil and paleosol samples. STEM analyses reveal that the amorphous components consist of a number of different phases. Of the two samples analyzed using STEM thus far, the secondary amorphous phases have compositions with varying ratios of SiO2, Al2O3, TiO2, and Fe-oxides, consistent with mass balance calculation results, but inconsistent with well-known amorphous phase compositions (e.g., allophane, ferrihydrite). These results show that a number of secondary amorphous phases can form within a single soil environment. Continued analysis can help determine whether compositional trends can be linked to environmental factors.

Oxygen ion-beam microlithography

DOEpatents

Tsuo, Y.S.

1991-08-20

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.

Oxygen ion-beam microlithography

DOEpatents

Tsuo, Y. Simon

1991-01-01

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.

Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

DOE PAGES

Malasi, A.; Taz, H.; Farah, A.; ...

2015-12-16

We report that ternary metal oxides of type (Me) 2O 3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 10 4 S/m) and Hall mobility (>30 cm 2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV.more » This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.« less

Oxidative Dissolution of Arsenopyrite by Mesophilic and Moderately Thermophilic Acidophiles †

PubMed Central

Tuovinen, Olli H.; Bhatti, Tariq M.; Bigham, Jerry M.; Hallberg, Kevin B.; Garcia, Oswaldo; Lindström, E. Börje

1994-01-01

The purpose of this work was to determine solution- and solid-phase changes associated with the oxidative leaching of arsenopyrite (FeAsS) by Thiobacillus ferrooxidans and a moderately thermoacidophilic mixed culture. Jarosite [KFe3(SO4)2(OH)6], elemental sulfur (S0), and amorphous ferric arsenate were detected by X-ray diffraction as solid-phase products. The oxidation was not a strongly acid-producing reaction and was accompanied by a relatively low redox level. The X-ray diffraction lines of jarosite increased considerably when ferrous sulfate was used as an additional substrate for T. ferroxidans. A moderately thermoacidophilic mixed culture oxidized arsenopyrite faster at 45°C than did T. ferroxidans at 22°C, and the oxidation was accompanied by a nearly stoichiometric release of Fe and As. The redox potential was initially low but subsequently increased during arsenopyrite oxidation by the thermoacidophiles. Jarosite, S0, and amorphous ferric arsenate were also formed under these conditions. PMID:16349379

Microstructural modifications induced by accelerated aging and lipid absorption in remelted and annealed UHMWPEs for total hip arthroplasty

PubMed Central

Puppulin, Leonardo; Zhu, Wenliang; Sugano, Nobuhiko

2014-01-01

Three types of commercially available ultra-high molecular weight polyethylene (UHMWPE) acetabular cups currently used in total hip arthroplasty have been studied by means of Raman micro-spectroscopy to unfold the microstructural modification induced by the oxidative degradation after accelerated aging with and without lipid absorption. The three investigated materials were produced by three different manufacturing procedures, as follows: irradiation followed by remelting, one-step irradiation followed by annealing, 3-step irradiation and annealing. Clear microstructural differences were observed in terms of phase contents (i.e. amorphous, crystalline and intermediate phase fraction). The three-step annealed material showed the highest crystallinity fraction in the bulk, while the remelted polyethylene is clearly characterized by the lowest content of crystalline phase and the highest content of amorphous phase. After accelerated aging either with or without lipids, the amount of amorphous phase decreased in all the samples as a consequence of the oxidation-induced recrystallization. The most remarkable variations of phase contents were detected in the remelted and in the single-step annealed materials. The presence of lipids triggered oxidative degradation especially in the remelted polyethylene. Such experimental evidence might be explained by the highest amount of amorphous phase in which lipids can be absorbed prior to accelerated aging. The results of these spectroscopic characterizations help to rationalize the complex effect of different irradiation and post-irradiation treatments on the UHMWPE microstructure and gives useful information on how significantly any single step of the manufacturing procedures might affect the oxidative degradation of the polymer. PMID:25179830

Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wood, Suzannah R.; Woods, Keenan N.; Plassmeyer, Paul N.

Amorphous metal oxides are central to a variety of technological applications. In particular, indium gallium oxide has garnered attention as a thin-film transistor channel layer material. In this work we examine the structural evolution of indium gallium oxide gel-derived powders and thin films using infrared vibrational spectroscopy, X-ray diffraction, and pair distribution function (PDF) analysis of X-ray total scattering from standard and normal incidence thin-film geometries (tfPDF). We find that the gel-derived powders and films from the same aqueous precursor evolve differently with temperature, forming mixtures of Ga-substituted In2O3 and In-substituted β-Ga2O3 with different degrees of substitution. X-ray total scatteringmore » and PDF analysis indicate that the majority phase for both the powders and films is an amorphous/nanocrystalline β-Ga2O3 phase, with a minor constituent of In2O3 with significantly larger coherence lengths. This amorphous β-Ga2O3 phase could not be identified using the conventional Bragg diffraction techniques traditionally used to study crystalline metal oxide thin films. The combination of Bragg diffraction and tfPDF provides a much more complete description of film composition and structure, which can be used to detail the effect of processing conditions and structure–property relationships. This study also demonstrates how structural features of amorphous materials, traditionally difficult to characterize by standard diffraction, can be elucidated using tfPDF.« less

Amorphous Mixed-Metal Oxide Thin Films from Aqueous Solution Precursors with Near-Atomic Smoothness.

PubMed

Kast, Matthew G; Cochran, Elizabeth A; Enman, Lisa J; Mitchson, Gavin; Ditto, Jeffrey; Siefe, Chris; Plassmeyer, Paul N; Greenaway, Ann L; Johnson, David C; Page, Catherine J; Boettcher, Shannon W

2016-12-28

Thin films with tunable and homogeneous composition are required for many applications. We report the synthesis and characterization of a new class of compositionally homogeneous thin films that are amorphous solid solutions of Al 2 O 3 and transition metal oxides (TMO x ) including VO x , CrO x , MnO x , Fe 2 O 3 , CoO x , NiO, CuO x , and ZnO. The synthesis is enabled by the rapid decomposition of molecular transition-metal nitrates TM(NO 3 ) x at low temperature along with precondensed oligomeric Al(OH) x (NO 3 ) 3-x cluster species, both of which can be processed from aq solution. The films are dense, ultrasmooth (R rms < 1 nm, near 0.1 nm in many cases), and atomically mixed amorphous metal-oxide alloys over a large composition range. We assess the chemical principles that favor the formation of amorphous homogeneous films over rougher phase-segregated nanocrystalline films. The synthesis is easily extended to other compositions of transition and main-group metal oxides. To demonstrate versatility, we synthesized amorphous V 0.1 Cr 0.1 Mn 0.1 Fe 0.1 Zn 0.1 Al 0.5 O x and V 0.2 Cr 0.2 Fe 0.2 Al 0.4 O x with R rms ≈ 0.1 nm and uniform composition. The combination of ideal physical properties (dense, smooth, uniform) and broad composition tunability provides a platform for film synthesis that can be used to study fundamental phenomena when the effects of transition metal cation identity, solid-state concentration of d-electrons or d-states, and/or crystallinity need to be controlled. The new platform has broad potential use in controlling interfacial phenomena such as electron transfer in solar-cell contacts or surface reactivity in heterogeneous catalysis.

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

PubMed

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

Characterisation of crystalline-amorphous blends of sucrose with terahertz-pulsed spectroscopy: the development of a prediction technique for estimating the degree of crystallinity with partial least squares regression.

PubMed

Ermolina, I; Darkwah, J; Smith, G

2014-04-01

The control of the amorphous and crystalline states of drugs and excipients is important in many instances of product formulation, manufacture, and packaging, such as the formulation of certain (freeze-dried) fast melt tablets. This study examines the use of terahertz-pulsed spectroscopy (TPS) coupled with two different data analytical methods as an off-line tool (in the first instance) for assessing the degree of crystallinity in a binary mixture of amorphous and polycrystalline sucrose. The terahertz spectrum of sucrose was recorded in the wave number range between 3 and 100 cm(-1) for both the pure crystalline form and for a mixture of the crystalline and amorphous (freeze-dried) form. The THz spectra of crystalline sucrose showed distinct absorption bands at ∼48, ∼55, and ∼60 cm(-1) while all these features were absent in the amorphous sucrose. Calibration models were constructed based on (1) peak area analysis and (2) partial least square regression analysis, with the latter giving the best LOD and LOQ of 0.76% and 2.3%, respectively. The potential for using THz spectroscopy, as a quantitative in-line tool for percent crystallinity in a range of complex systems such as conventional tablets and freeze-dried formulations, is suggested in this study.

Interactions of hydrogen with amorphous hafnium oxide

NASA Astrophysics Data System (ADS)

Kaviani, Moloud; Afanas'ev, Valeri V.; Shluger, Alexander L.

2017-02-01

We used density functional theory (DFT) calculations to study the interaction of hydrogen with amorphous hafnia (a -HfO2 ) using a hybrid exchange-correlation functional. Injection of atomic hydrogen, its diffusion towards electrodes, and ionization can be seen as key processes underlying charge instability of high-permittivity amorphous hafnia layers in many applications. Hydrogen in many wide band gap crystalline oxides exhibits negative-U behavior (+1 and -1 charged states are thermodynamically more stable than the neutral state) . Our results show that in a -HfO2 hydrogen is also negative-U, with charged states being the most thermodynamically stable at all Fermi level positions. However, metastable atomic hydrogen can share an electron with intrinsic electron trapping precursor sites [Phys. Rev. B 94, 020103 (2016)., 10.1103/PhysRevB.94.020103] forming a [etr -+O -H ] center, which is lower in energy on average by about 0.2 eV. These electron trapping sites can affect both the dynamics and thermodynamics of the interaction of hydrogen with a -HfO2 and the electrical behavior of amorphous hafnia films in CMOS devices.

Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide

NASA Astrophysics Data System (ADS)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-05-01

Based on a rational classification of defects in amorphous materials, we propose a simplified model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium zinc oxide (a -IGZO). The proposed approach consists of organizing defects into two categories: point defects, generating structural anomalies such as metal—metal or oxygen—oxygen bonds, and defects emerging from changes in the material stoichiometry, such as vacancies and interstitial atoms. Based on first-principles simulations, it is argued that the defects originating from the second group always act as perfect donors or perfect acceptors. This classification simplifies and rationalizes the nature of defects in amorphous phases. In a -IGZO, the most important point defects are metal—metal bonds (or small metal clusters) and peroxides (O - O single bonds). Electrons are captured by metal—metal bonds and released by the formation of peroxides. The presence of hydrogen can lead to two additional types of defects: metal-hydrogen defects, acting as acceptors, and oxygen-hydrogen defects, acting as donors. The impact of these defects is linked to different instabilities observed in a -IGZO. Specifically, the diffusion of hydrogen and oxygen is connected to positive- and negative-bias stresses, while negative-bias illumination stress originates from the formation of peroxides.

Ultrasensitive Surface-Enhanced Raman Spectroscopy Detection Based on Amorphous Molybdenum Oxide Quantum Dots.

PubMed

Li, Hao; Xu, Qun; Wang, Xuzhe; Liu, Wei

2018-06-07

Surface-enhanced Raman spectroscopy (SERS) based on plasmonic semiconductive material has been proved to be an efficient tool to detect trace of substances, while the relatively weak plasmon resonance compared with noble metal materials restricts its practical application. Herein, for the first time a facile method to fabricate amorphous H x MoO 3 quantum dots with tunable plasmon resonance is developed by a controlled oxidization route. The as-prepared amorphous H x MoO 3 quantum dots show tunable plasmon resonance in the region of visible and near-infrared light. Moreover, the tunability induced by SC CO 2 is analyzed by a molecule kinetic theory combined with a molecular thermodynamic model. More importantly, the ultrahigh enhancement factor of amorphous H x MoO 3 quantum dots detecting on methyl blue can be up to 9.5 × 10 5 with expending the limit of detection to 10 -9 m. Such a remarkable porperty can also be found in this H x MoO 3 -based sensor with Rh6G and RhB as probe molecules, suggesting that the amorphous H x MoO 3 quantum dot is an efficient candidate for SERS on molecule detection in high precision. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of nitrogen addition on the structural, electrical, and optical properties of In-Sn-Zn oxide thin films

NASA Astrophysics Data System (ADS)

Jia, Junjun; Torigoshi, Yoshifumi; Suko, Ayaka; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Shigesato, Yuzo

2017-02-01

Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In2O3 phase, to a c-axis oriented InN polycrystalline phase, where InN starts to nucleate from an amorphous In2O3 matrix. Whereas, nitrogen addition had no obvious effect on the structure of indium-gallium-zinc oxide (IGZO) films even at a nitrogen flow ratio of 100%. Nitrogen addition also suppressed the formation of oxygen-related vacancies in ITZO films when the nitrogen flow ratio was less than 20%, and higher nitrogen addition led to an increase in carrier density. Moreover, a red-shift in the optical band edge was observed as the nitrogen flow ratio increased, which could be attributed to the generation of InN crystallites. We anticipate that the present findings demonstrating nitrogen-addition induced structural changes can help to understand the environment-dependent instability in amorphous IGZO or ITZO based thin-film transistors (TFTs).

Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

PubMed

Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

2016-08-10

We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics.

Framboidal iron oxide: Chondrite-like material from the black mat, Murray Springs, Arizona

NASA Astrophysics Data System (ADS)

Fayek, Mostafa; Anovitz, Lawrence M.; Allard, Lawrence F.; Hull, Sharon

2012-02-01

At the end of the Pleistocene a Younger Dryas "black mat" was deposited on top of the Pleistocene sediments in many parts of North America. A study of the magnetic fraction (~ 10,900 ± 50 B.P.) from the basal section of the black mat at Murray Springs, AZ revealed the presence of amorphous iron oxide framboids in a glassy iron-silica matrix. These framboids are very similar in appearance and chemistry to those reported from several types of carbonaceous chondrites. The glass contains iron, silicon, oxygen, vanadium and minor titanium, while the framboidal particles contain calcium as well. The major element chemistry of both the spherules and the glass matrix are consistent with the chemistry of material associated with meteorite impact sites and meteorites. Electron microscopy confirms that the glassy material is indeed amorphous, and also shows that what appear to be individual oxide particles are amorphous as well. The latter appears consistent with their overall morphology that, while euhedral, typically shows significant fracture. Based on these data, we argue that these particles are the product of a hypervelocity impact.

Organic matter diagenesis as the key to a unifying theory for the genesis of tabular uranium-vanadium deposits in the Morrison Formation, Colorado Plateau

USGS Publications Warehouse

Hansley, P.L.; Spirakis, C.S.

1992-01-01

Interstitial, epigenetic amorphous organic matter is intimately associated with uranium in the Grants uranium region and is considered essential to genetic models for these deposits. In contrast, uranium minerals are intimately associated with authigenic vanadium chlorite and vanadium oxides in amorphous organic matter-poor ores of the Slick Rock and Henry Mountains mining districts and therefore, in some genetic models amorphous organic matter is not considered crucial to the formation of these deposits. Differences in organic matter content can be explained by recognizing that amorphous organic matter-poor deposits have been subjected to more advanced stages of diagenesis than amorphous organic matter-rich deposits. Evidence that amorphous organic matter was involved in the genesis of organic matter-poor, as well as organic matter-rich, deposits is described. -from Authors

Relating hydrogen-bonding interactions with the phase behavior of naproxen/PVP K 25 solid dispersions: evaluation of solution-cast and quench-cooled films.

PubMed

Paudel, Amrit; Nies, Erik; Van den Mooter, Guy

2012-11-05

In this work, we investigated the relationship between various intermolecular hydrogen-bonding (H-bonding) interactions and the miscibility of the model hydrophobic drug naproxen with the hydrophilic polymer polyvinylpyrrolidone (PVP) across an entire composition range of solid dispersions prepared by quasi-equilibrium film casting and nonequilibrium melt quench cooling. The binary phase behavior in solid dispersions exhibited substantial processing method dependence. The solid state solubility of crystalline naproxen in PVP to form amorphous solid dispersions was 35% and 70% w/w naproxen in solution-cast films and quench-cooled films, respectively. However, the presence of a single mixed phase glass transition indicated the amorphous miscibility to be 20% w/w naproxen for the films, beyond which amorphous-amorphous and/or crystalline phase separations were apparent. This was further supported by the solution state interactions data such as PVP globular size distribution and solution infrared spectral profiles. The borderline melt composition showed cooling rate dependence of amorphization. The glass transition and melting point depression profiles of the system were treated with the analytical expressions based on Flory-Huggins mixing theory to interpolate the equilibrium solid solubility. FTIR analysis and subsequent spectral deconvolution revealed composition and miscibility dependent variations in the strength of drug-polymer intermolecular H-bonding. Two types of H-bonded populations were evidenced from 25% w/w and 35% w/w naproxen in solution-cast films and quench-cooled films, respectively, with the higher fraction of strongly H-bonded population in the drug rich domains of phase separated amorphous film compositions and highly drug loaded amorphous quench-cooled dispersions.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F.

2014-09-01

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitivemore » substrates.« less

Influence of amorphous structure on polymorphism in vanadia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stone, Kevin H.; Schelhas, Laura T.; Garten, Lauren M.

Normally we think of the glassy state as a single phase and therefore crystallization from chemically identical amorphous precursors should be identical. Here we show that the local structure of an amorphous precursor is distinct depending on the initial deposition conditions, resulting in significant differences in the final state material. Using grazing incidence total x-ray scattering, we have determined the local structure in amorphous thin films of vanadium oxide grown under different conditions using pulsed laser deposition (PLD). Here we show that the subsequent crystallization of films deposited using different initial PLD conditions result in the formation of different polymorphsmore » of VO 2. Ultimately this suggests the possibility of controlling the formation of metastable polymorphs by tuning the initial amorphous structure to different formation pathways.« less

Influence of amorphous structure on polymorphism in vanadia

DOE PAGES

Stone, Kevin H.; Schelhas, Laura T.; Garten, Lauren M.; ...

2016-07-13

Normally we think of the glassy state as a single phase and therefore crystallization from chemically identical amorphous precursors should be identical. Here we show that the local structure of an amorphous precursor is distinct depending on the initial deposition conditions, resulting in significant differences in the final state material. Using grazing incidence total x-ray scattering, we have determined the local structure in amorphous thin films of vanadium oxide grown under different conditions using pulsed laser deposition (PLD). Here we show that the subsequent crystallization of films deposited using different initial PLD conditions result in the formation of different polymorphsmore » of VO 2. Ultimately this suggests the possibility of controlling the formation of metastable polymorphs by tuning the initial amorphous structure to different formation pathways.« less

Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

NASA Astrophysics Data System (ADS)

Marrs, Michael

A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.

Thickness dependence of optical properties of amorphous indium oxide thin films deposited by reactive evaporation

NASA Astrophysics Data System (ADS)

Uluta, K.; Deer, D.; Skarlatos, Y.

2006-08-01

The electrical conductivity and absorption coefficient of amorphous indium oxide thin films, thermally evaporated on glass substrates at room temperature, were evaluated. For direct transitions the variation of the optical band gap with thickness was determined and this variation was supposed to appear due to the variation of localized gap states, whereas the variation of conductivity with thickness was supposed to be due to the variation of carrier concentration. We attribute the variation of absorption coefficient with thickness to the variation of optical band gap energy rather than optical interference.

Humic Acid Reduction by Propionibacterium freudenreichii and Other Fermenting Bacteria

PubMed Central

Benz, Marcus; Schink, Bernhard; Brune, Andreas

1998-01-01

Iron-reducing bacteria have been reported to reduce humic acids and low-molecular-weight quinones with electrons from acetate or hydrogen oxidation. Due to the rapid chemical reaction of amorphous ferric iron with the reduced reaction products, humic acids and low-molecular-weight redox mediators may play an important role in biological iron reduction. Since many anaerobic bacteria that are not able to reduce amorphous ferric iron directly are known to transfer electrons to other external acceptors, such as ferricyanide, 2,6-anthraquinone disulfonate (AQDS), or molecular oxygen, we tested several physiologically different species of fermenting bacteria to determine their abilities to reduce humic acids. Propionibacterium freudenreichii, Lactococcus lactis, and Enterococcus cecorum all shifted their fermentation patterns towards more oxidized products when humic acids were present; P. freudenreichii even oxidized propionate to acetate under these conditions. When amorphous ferric iron was added to reoxidize the electron acceptor, humic acids were found to be equally effective when they were added in substoichiometric amounts. These findings indicate that in addition to iron-reducing bacteria, fermenting bacteria are also capable of channeling electrons from anaerobic oxidations via humic acids towards iron reduction. This information needs to be considered in future studies of electron flow in soils and sediments. PMID:9797315

21 CFR 73.1991 - Zinc oxide.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc oxide is a white or yellow-white amorphous...

21 CFR 73.1991 - Zinc oxide.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc oxide is a white or yellow-white amorphous...

21 CFR 73.1991 - Zinc oxide.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc oxide is a white or yellow-white amorphous...

Processing-dependent thermal stability of a prototypical amorphous metal oxide

NASA Astrophysics Data System (ADS)

Zeng, Li; Moghadam, Mahyar M.; Buchholz, D. Bruce; Li, Ran; Keane, Denis T.; Dravid, Vinayak P.; Chang, Robert P. H.; Voorhees, Peter W.; Marks, Tobin J.; Bedzyk, Michael J.

2018-05-01

Amorphous metal oxides (AMOs) are important candidate materials for fabricating next-generation thin-film transistors. While much attention has been directed toward the synthesis and electrical properties of AMOs, less is known about growth conditions that allow AMOs to retain their desirable amorphous state when subjected to high operating temperatures. Using in situ x-ray scattering and level-set simulations, we explore the time evolution of the crystallization process for a set of amorphous I n2O3 thin films synthesized by pulsed-laser deposition at deposition temperatures (Td) of -50, -25, and 0 °C. The films were annealed isothermally and the degree of crystallinity was determined by a quantitative analysis of the time-evolved x-ray scattering patterns. As expected, for films grown at the same Td, an increase in the annealing temperature TA led to a shorter delay prior to the onset of crystallization, and a faster crystallization rate. Moreover, when lowering the deposition temperature by 25 °C, a 40 °C increase in annealing temperature is needed to achieve the same time interval for the crystals to grow from 10 to 90% volume fraction of the sample. Films grown at Td=0 ∘C exhibited strong cubic texture after crystallization. A level-set method was employed to quantitatively model the texture that develops in the microstructures and to determine key parameters, such as the interface growth velocity, the nucleation density, and the activation energy. The differences observed in the crystallization processes are attributed to the changes in the atomic structure of the oxide and possible nanocrystalline inclusions that formed during the deposition of the amorphous phase.

Effect of silicon and oxygen dopants on the stability of hydrogenated amorphous carbon under harsh environmental conditions

DOE PAGES

Mangolini, Filippo; Krick, Brandon A.; Jacobs, Tevis D. B.; ...

2017-12-27

Harsh environments pose materials durability challenges across the automotive, aerospace, and manufacturing sectors, and beyond. While amorphous carbon materials have been used as coatings in many environmentally-demanding applications owing to their unique mechanical, electrical, and optical properties, their limited thermal stability and high reactivity in oxidizing environments have impeded their use in many technologies. Silicon- and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) films are promising for several applications because of their higher thermal stability and lower residual stress compared to hydrogenated amorphous carbon (a-C:H). However, an understanding of their superior thermo-oxidative stability compared to a-C:H is lacking, as it has beenmore » inhibited by the intrinsic challenge of characterizing an amorphous, multi-component material. Here, we show that introducing silicon and oxygen in a-C:H slightly enhances the thermal stability in vacuum, but tremendously increases the thermo-oxidative stability and the resistance to degradation upon exposure to the harsh conditions of low Earth orbit (LEO). The latter is demonstrated by having mounted samples of a-C:H:Si:O on the exterior of the International Space Station via the Materials International Space Station (MISSE) mission 7b. Exposing lightly-doped a-C:H:Si:O to elevated temperatures under aerobic conditions or to LEO causes carbon volatilization in the near-surface region, producing a silica surface layer that protects the underlying carbon from further removal. In conclusion, these findings provide a novel physically-based understanding of the superior stability of a-C:H:Si:O in harsh environments compared to a-C:H.« less

Laboratory Simulated Acid-Sulfate Weathering of Basaltic Materials: Implications for Formation of Sulfates at Meridiani Planum and Gusev Crater, Mars

NASA Technical Reports Server (NTRS)

Golden, D. C.; Ming, Douglas W.; Morris, Richard V.; Mertzman, A.

2006-01-01

Acid-sulfate weathering of basaltic materials is a candidate formation process for the sulfate-rich outcrops and rocks at the MER rover Opportunity and Spirit landing sites. To determine the style of acid-sulfate weathering on Mars, we weathered basaltic materials (olivine-rich glassy basaltic sand and plagioclase feldspar-rich basaltic tephra) in the laboratory under different oxidative, acid-sulfate conditions and characterized the alteration products. We investigated alteration by (1) sulfuric-acid vapor (acid fog), (2) three-step hydrothermal leaching treatment approximating an open system and (3) single-step hydrothermal batch treatment approximating a "closed system." In acid fog experiments, Al, Fe, and Ca sulfates and amorphous silica formed from plagioclase-rich tephra, and Mg and Ca sulfates and amorphous silica formed from the olivine-rich sands. In three-step leaching experiments, only amorphous Si formed from the plagioclase-rich basaltic tephra, and jarosite, Mg and Ca sulfates and amorphous silica formed from olivine-rich basaltic sand. Amorphous silica formed under single-step experiments for both starting materials. Based upon our experiments, jarosite formation in Meridiani outcrop is potential evidence for an open system acid-sulfate weathering regime. Waters rich in sulfuric acid percolated through basaltic sediment, dissolving basaltic phases (e.g., olivine) and forming jarosite, other sulfates, and iron oxides. Aqueous alteration of outcrops and rocks on the West Spur of the Columbia Hills may have occurred when vapors rich in SO2 from volcanic sources reacted with basaltic materials. Soluble ions from the host rock (e.g., olivine) reacted with S to form Ca-, Mg-, and other sulfates along with iron oxides and oxyhydroxides.

Effect of silicon and oxygen dopants on the stability of hydrogenated amorphous carbon under harsh environmental conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangolini, Filippo; Krick, Brandon A.; Jacobs, Tevis D. B.

Harsh environments pose materials durability challenges across the automotive, aerospace, and manufacturing sectors, and beyond. While amorphous carbon materials have been used as coatings in many environmentally-demanding applications owing to their unique mechanical, electrical, and optical properties, their limited thermal stability and high reactivity in oxidizing environments have impeded their use in many technologies. Silicon- and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) films are promising for several applications because of their higher thermal stability and lower residual stress compared to hydrogenated amorphous carbon (a-C:H). However, an understanding of their superior thermo-oxidative stability compared to a-C:H is lacking, as it has beenmore » inhibited by the intrinsic challenge of characterizing an amorphous, multi-component material. Here, we show that introducing silicon and oxygen in a-C:H slightly enhances the thermal stability in vacuum, but tremendously increases the thermo-oxidative stability and the resistance to degradation upon exposure to the harsh conditions of low Earth orbit (LEO). The latter is demonstrated by having mounted samples of a-C:H:Si:O on the exterior of the International Space Station via the Materials International Space Station (MISSE) mission 7b. Exposing lightly-doped a-C:H:Si:O to elevated temperatures under aerobic conditions or to LEO causes carbon volatilization in the near-surface region, producing a silica surface layer that protects the underlying carbon from further removal. In conclusion, these findings provide a novel physically-based understanding of the superior stability of a-C:H:Si:O in harsh environments compared to a-C:H.« less

Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trifonov, A. S., E-mail: trifonov.artem@phys.msu.ru; Physics Faculty, Lomonosov Moscow State University, Moscow 119991; Lubenchenko, A. V.

2015-03-28

Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of themore » alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbO{sub x} top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb{sub 2}O{sub 5}, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb{sub 2}O{sub 5} interface providing p-type conductivity.« less

Surface nanoporosity has a greater influence on osteogenic and bacterial cell adhesion than crystallinity and wettability

NASA Astrophysics Data System (ADS)

Rodriguez-Contreras, Alejandra; Guadarrama Bello, Dainelys; Nanci, Antonio

2018-07-01

There has been much emphasis on the influence of crystallinity and wettability for modulating cell activity, particularly for bone biomaterials. In this context, we have generated titanium oxide layers with similar mesoporous topography and surface roughness but with amorphous or crystalline oxide layers and differential wettability. We then investigated their influence on the behavior of MC3T3 osteoblastic and bacterial cells. There was no difference in cell adhesion, spreading and growth on amorphous and crystalline surfaces. The number of focal adhesions was similar, however, cells on the amorphous surface exhibited a higher frequency of mature adhesions. The crystallinity of the surface layers also had no bearing on bacterial adhesion. While it cannot be excluded that surface crystallinity, roughness and wettability contribute to some degree to determining cell behavior, our data suggest that physical characteristics of surfaces represent the major determinant.

Phase formation polycrystalline vanadium oxide via thermal annealing process under controlled nitrogen pressure

NASA Astrophysics Data System (ADS)

Jessadaluk, S.; Khemasiri, N.; Rahong, S.; Rangkasikorn, A.; Kayunkid, N.; Wirunchit, S.; Horprathum, M.; Chananonnawathron, C.; Klamchuen, A.; Nukeaw, J.

2017-09-01

This article provides an approach to improve and control crystal phases of the sputtering vanadium oxide (VxOy) thin films by post-thermal annealing process. Usually, as-deposited VxOy thin films at room temperature are amorphous phase: post-thermal annealing processes (400 °C, 2 hrs) under the various nitrogen (N2) pressures are applied to improve and control the crystal phase of VxOy thin films. The crystallinity of VxOy thin films changes from amorphous to α-V2O5 phase or V9O17 polycrystalline, which depend on the pressure of N2 carrier during annealing process. Moreover, the electrical resistivity of the VxOy thin films decrease from 105 Ω cm (amorphous) to 6×10-1 Ω cm (V9O17). Base on the results, our study show a simply method to improve and control phase formation of VxOy thin films.

Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons.

PubMed

Fukuhara, Mikio; Sugawara, Kazuyuki

2014-01-01

Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC.

Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons

PubMed Central

2014-01-01

Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC. PMID:24959106

Predict the glass transition temperature and plasticization of β-cyclodextrin/water binary system by molecular dynamics simulation.

PubMed

Zhou, Guohui; Zhao, Tianhai; Wan, Jie; Liu, Chengmei; Liu, Wei; Wang, Risi

2015-01-12

The glass transition temperature, diffusion behavior and plasticization of β-cyclodextrin (β-CD), and three amorphous β-CD/water mixtures (3%, 5% and 10% [w/w] water, respectively) were investigated by molecular dynamics simulation, which were performed using Condensed-phase Optimized Molecular Potentials for Atomistic Simulation Studies (COMPASS) force field and isothermal-isobaric ensembles. The specific volumes of four amorphous cells were obtained as a function of temperature. The glass transition temperatures (T(g)) were estimated to be 334.25 K, 325.12 K, 317.32 K, and 305.41 K for amorphous β-CD containing 0%, 3%, 5% and 10% w/w water, respectively, which compares well with the values observed in published literature. The radial distribution function was computed to elucidate the intermolecular interactions between amorphous β-CD and water, which acts as a plasticizer. These results indicate that the hydrogen bond interactions of oxygen in hydroxyl ions was higher than oxygen in acetal groups in β-CD amorphous mixtures with that in water, due to less accessibility of ring oxygens to the surrounding water molecules. The mobility of water molecules was investigated over various temperature ranges, including the rubbery and glassy phases of the β-CD/water mixtures, by calculating the diffusion coefficients and the fractional free volume. In β-CD amorphous models, the higher mobility of water molecules was observed at temperatures above Tg, and almost no change was observed at temperatures below T(g). Copyright © 2014 Elsevier Ltd. All rights reserved.

Diamond Composite Films for Protective Coatings on Metals and Method of Formation

NASA Technical Reports Server (NTRS)

Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

1997-01-01

Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Solid state microwave synthesis of highly crystalline ordered mesoporous hausmannite Mn 3 O 4 films

DOE PAGES

Xia, Yanfeng; Qiang, Zhe; Lee, Byeongdu; ...

2017-06-23

Microwave calcination of ordered micelle templated manganese carbonate films leads to highly crystalline, ordered mesoporous manganese oxide, while similar temperatures in a furnace lead to disordered, amorphous manganese oxide.

The Effect of PtRuIr Nanoparticle Crystallinity in Electrocatalytic Methanol Oxidation

PubMed Central

Ma, Yanjiao; Wang, Rongfang; Wang, Hui; Liao, Shijun; Key, Julian; Linkov, Vladimir; Ji, Shan

2013-01-01

Two structural forms of a ternary alloy PtRuIr/C catalyst, one amorphous and one highly crystalline, were synthesized and compared to determine the effect of their respective structures on their activity and stability as anodic catalysts in methanol oxidation. Characterization techniques included TEM, XRD, and EDX. Electrochemical analysis using a glassy carbon disk electrode for cyclic voltammogram and chronoamperometry were tested in a solution of 0.5 mol L−1 CH3OH and 0.5 mol L−1 H2SO4. Amorphous PtRuIr/C catalyst was found to have a larger electrochemical surface area, while the crystalline PtRuIr/C catalyst had both a higher activity in methanol oxidation and increased CO poisoning rate. Crystallinity of the active alloy nanoparticles has a big impact on both methanol oxidation activity and in the CO poisoning rate. PMID:28809233

Glassy nature and glass-to-crystal transition in the binary metallic glass CuZr

NASA Astrophysics Data System (ADS)

Wei, Zi-Yang; Shang, Cheng; Zhang, Xiao-Jie; Liu, Zhi-Pan

2017-06-01

The prediction for the stability of glassy material is a key challenge in physical science. Here, we report a theoretical framework to predict the glass stability based on stochastic surface walking global optimization and reaction pathway sampling. This is demonstrated by revealing for the first time the global potential energy surface (PES) of two systems, CuZr binary metallic glass and nonglassy pure Cu systems, and establishing the lowest energy pathways linking glassy/amorphous structures with crystalline structures. The CuZr system has a significant number of glassy structures on PES that are ˜0.045 eV /atom above the crystal structure. Two clear trends are identified from global PES in the glass-to-crystal transition of the CuZr system: (i) the local Zr-Cu coordination (nearest neighbor) increases, and (ii) the local Zr bonding environment becomes homogeneous. This allows us to introduce quantitative structural and energetics conditions to distinguish the glassy structures from the crystalline structures. Because of the local Zr-Cu exchange in the glass-to-crystal transition, a high reaction barrier (>0.048 eV /atom ) is present to separate the glassy structures and the crystals in CuZr. By contrast, the Cu system, although it does possess amorphous structures that appear at much higher energy (˜0.075 eV /atom ) with respect to the crystal structure, has very low reaction barriers for the crystallization of amorphous structures, i.e. <0.011 eV /atom . The quantitative data on PES now available from global optimization techniques deepens our understanding on the microscopic nature of glassy material and might eventually facilitate the design of stable glassy materials.

Optimising Drug Solubilisation in Amorphous Polymer Dispersions: Rational Selection of Hot-melt Extrusion Processing Parameters.

PubMed

Li, Shu; Tian, Yiwei; Jones, David S; Andrews, Gavin P

2016-02-01

The aim of this article was to construct a T-ϕ phase diagram for a model drug (FD) and amorphous polymer (Eudragit® EPO) and to use this information to understand the impact of how temperature-composition coordinates influenced the final properties of the extrudate. Defining process boundaries and understanding drug solubility in polymeric carriers is of utmost importance and will help in the successful manufacture of new delivery platforms for BCS class II drugs. Physically mixed felodipine (FD)-Eudragit(®) EPO (EPO) binary mixtures with pre-determined weight fractions were analysed using DSC to measure the endset of melting and glass transition temperature. Extrudates of 10 wt% FD-EPO were processed using temperatures (110°C, 126°C, 140°C and 150°C) selected from the temperature-composition (T-ϕ) phase diagrams and processing screw speed of 20, 100 and 200rpm. Extrudates were characterised using powder X-ray diffraction (PXRD), optical, polarised light and Raman microscopy. To ensure formation of a binary amorphous drug dispersion (ADD) at a specific composition, HME processing temperatures should at least be equal to, or exceed, the corresponding temperature value on the liquid-solid curve in a F-H T-ϕ phase diagram. If extruded between the spinodal and liquid-solid curve, the lack of thermodynamic forces to attain complete drug amorphisation may be compensated for through the use of an increased screw speed. Constructing F-H T-ϕ phase diagrams are valuable not only in the understanding drug-polymer miscibility behaviour but also in rationalising the selection of important processing parameters for HME to ensure miscibility of drug and polymer.

Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

PubMed Central

Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

2013-01-01

This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

Laboratory studies of refractory metal oxide smokes

NASA Technical Reports Server (NTRS)

Nuth, Joseph A.; Nelson, R. N.; Donn, Bertram

1989-01-01

Studies of the properties of refractory metal oxide smokes condensed from a gas containing various combinations of SiH4, Fe(CO)5, Al(CH3)3, TiCl4, O2 and N2O in a hydrogen carrier stream at 500 K greater than T greater than 1500 K were performed. Ultraviolet, visible and infrared spectra of pure, amorphous SiO(x), FeO(x), AlO(x) and TiO(x) smokes are discussed, as well as the spectra of various co-condensed amorphous oxides, such as FE(x)SiO(y) or Fe(x)AlO(y). Preliminary studies of the changes induced in the infrared spectra of iron-containing oxide smokes by vacuum thermal annealing suggest that such materials become increasingly opaque in the near infrared with increased processing: hydration may have the opposite effect. More work on the processing of these materials is required to confirm such a trend: this work is currently in progress. Preliminary studies of the ultraviolet spectra of amorphous Si2O3 and MgSiO(x) smokes revealed no interesting features in the region from 200 to 300 nm. Studies of the ultraviolet spectra of both amorphous, hydrated and annealed SiO(x), TiO(x), AlO(x) and FeO(x) smokes are currently in progress. Finally, data on the oxygen isotopic composition of the smokes produced in the experiments are presented, which indicate that the oxygen becomes isotopically fractionated during grain condensation. Oxygen in the grains is as much as 3 percent per amu lighter than the oxygen in the original gas stream. The authors are currently conducting experiments to understand the mechanism by which fractionation occurs.

Amorphous manganese-calcium oxides as a possible evolutionary origin for the CaMn₄ cluster in photosystem II.

PubMed

Najafpour, Mohammad Mahdi

2011-06-01

In this paper a few calcium-manganese oxides and calcium-manganese minerals are studied as catalysts for water oxidation. The natural mineral marokite is also studied as a catalyst for water oxidation for the first time. Marokite is made up of edge-sharing Mn(3+) in a distorted octahedral environment and eight-coordinate Ca(2+) centered polyhedral layers. The structure is similar to recent models of the oxygen evolving complex in photosystem II. Thus, the oxygen evolving complex in photosystem II does not have an unusual structure and could be synthesized hydrothermally. Also in this paper, oxygen evolution is studied with marokite (CaMn₂O₄), pyrolusite (MnO₂) and compared with hollandite (Ba(0.2)Ca(0.15)K(0.3)Mn(6.9)Al(0.2)Si(0.3)O(16)), hausmannite (Mn₃O₄), Mn₂O₃.H₂O, Ca Mn₃O₆.H₂O, CaMn₄O₈.H₂O, CaMn₂O₄.H₂O and synthetic marokite (CaMn₂O₄). I propose that the origin of the oxygen evolving complex in photosystem II resulted from absorption of calcium and manganese ions that were precipitated together in the archean oceans by protocyanobacteria because of changing pH from ~5 to ~8-10. As reported in this paper, amorphous calcium-manganese oxides with different ratios of manganese and calcium are effective catalysts for water oxidation. The bond types and lengths of the calcium and manganese ions in the calcium-manganese oxides are directly comparable to those in the OEC. This primitive structure of these amorphous calcium-manganese compounds could be changed and modified by environmental groups (amino acids) to form the oxygen evolving complex in photosystem II.

Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

NASA Technical Reports Server (NTRS)

Grove, C. A.; Judd, G.; Ansell, G. S.

1972-01-01

Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

Development of RF sputtered chromium oxide coating for wear application

NASA Technical Reports Server (NTRS)

Bhushan, B.

1979-01-01

The radio frequency sputtering technique was used to deposite a hard refractory, chromium oxide coating on an Inconel X-750 foil 0.1 mm thick. Optimized sputtering parameters for a smooth and adherent coating were found to be as follows: target-to-substrate spacing, 41.3 mm; argon pressure, 5-10 mTorr; total power to the sputtering module, 400 W (voltage at the target, 1600 V), and a water-cooled substrate. The coating on the annealed foil was more adherent than that on the heat-treated foil. Substrate biasing during the sputter deposition of Cr2O3 adversely affected adherence by removing naturally occurring interfacial oxide layers. The deposited coatings were amorphous and oxygen deficient. Since amorphous materials are extremely hard, the structure was considered to be desirable.

Two orders of magnitude enhancement in oxygen evolution reactivity on amorphous Ba0.5Sr0.5Co0.8Fe0.2O3−δ nanofilms with tunable oxidation state

PubMed Central

Chen, Gao; Zhou, Wei; Guan, Daqin; Sunarso, Jaka; Zhu, Yanping; Hu, Xuefeng; Zhang, Wei; Shao, Zongping

2017-01-01

Perovskite oxides exhibit potential for use as electrocatalysts in the oxygen evolution reaction (OER). However, their low specific surface area is the main obstacle to realizing a high mass-specific activity that is required to be competitive against the state-of-the-art precious metal–based catalysts. We report the enhanced performance of Ba0.5Sr0.5Co0.8Fe0.2O3−δ (BSCF) for the OER with intrinsic activity that is significantly higher than that of the benchmark IrO2, and this result was achieved via fabrication of an amorphous BSCF nanofilm on a surface-oxidized nickel substrate by magnetron sputtering. The surface nickel oxide layer of the Ni substrate and the thickness of the BSCF film were further used to tune the intrinsic OER activity and stability of the BSCF catalyst by optimizing the electronic configuration of the transition metal cations in BSCF via the interaction between the nanofilm and the surface nickel oxide, which enables up to 315-fold enhanced mass-specific activity compared to the crystalline BSCF bulk phase. Moreover, the amorphous BSCF–Ni foam anode coupled with the Pt–Ni foam cathode demonstrated an attractive small overpotential of 0.34 V at 10 mA cm−2 for water electrolysis, with a BSCF loading as low as 154.8 μg cm−2. PMID:28691090

Structure and Internal Stress of Tin-Doped Indium Oxide and Indium-Zinc Oxide Films Deposited by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Nishimura, Eriko; Sasabayashi, Tomoko; Ito, Norihiro; Sato, Yasushi; Utsumi, Kentaro; Yano, Koki; Kaijo, Akira; Inoue, Kazuyoshi; Shigesato, Yuzo

2007-12-01

Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium-zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures (Ptot) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a Ptot lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about 1.5 × 109 Pa, whereas the ITO films deposited at 1.5-3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a Ptot range of 0.3-3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a Ptot lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.

Investigation of the influence of pretreatment parameters on the surface characteristics of amorphous metal for use in power industry

NASA Astrophysics Data System (ADS)

Nieroda, Jolanta; Rybak, Andrzej; Kmita, Grzegorz; Sitarz, Maciej

2018-05-01

Metallic glasses are metallic materials, which exhibit an amorphous structure. These are mostly three or more component alloys, and some of them are magnetic metals. Materials of this kind are characterized by high electrical resistivity and at the same time exhibit very good magnetic properties (e.g. low-magnetization loss). The above mentioned properties are very useful in electrical engineering industry and this material is more and more popular as a substance for high-efficiency electrical devices production. This industry area is still evolving, and thus even higher efficiency of apparatus based on amorphous material is expected. A raw material must be carefully investigated and characterized before the main production process is started. Presented work contains results of complementary examination of amorphous metal Metglas 2605. Studies involve two ways to obtain clean and oxidized surface with high reactivity, namely degreasing followed by annealing process and plasma treatment. The amorphous metal parameters were examined by means of several techniques: surface free energy (SFE) measurements by sessile drop method, X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), and both ex situ and in situ Raman spectroscopy. Additionally, influence of plasma parameters on wetting properties were optimized in systematic way with Design of Experiments (DOE) method. A wide range of used methods allow to fully investigate the amorphous metal material during preliminary preparation of surface. Obtained results provide information about appropriate parameters that should be applied in order to obtain highly reactive surface with functional oxide layer on it.

Semiconductor composition containing iron, dysprosium, and terbium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.

An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

Amorphous lead oxide (a-PbO): suppression of signal lag via engineering of the layer structure.

PubMed

Semeniuk, O; Grynko, O; Juska, G; Reznik, A

2017-10-16

Presence of a signal lag is a bottle neck of performance for many non-crystalline materials, considered for dynamic radiation sensing. Due to inadequate lag-related temporal performance, polycrystalline layers of CdZnTe, PbI 2 , HgI 2 and PbO are not practically utilized, despite their superior X-ray sensitivity and low production cost (even for large area detectors). In the current manuscript, we show that a technological step to replace nonhomogeneous disorder in polycrystalline PbO with homogeneous amorphous PbO structure suppresses signal lag and improves time response to X-ray irradiation. In addition, the newly developed amorphous lead oxide (a-PbO) possesses superior X-ray sensitivity in terms of electron-hole pair creation energy [Formula: see text] in comparison with amorphous selenium - currently the only photoconductor used as an X-ray-to-charge transducer in the state-of-the-art direct conversion X-ray medical imaging systems. The proposed advances of the deposition process are low cost, easy to implement and with certain customization might potentially be applied to other materials, thus paving the way to their wide-range commercial use.

Amorphous Phase Characterization Through X-Ray Diffraction Profile Modeling: Implications for Amorphous Phases in Gale Crater Rocks and Soils

NASA Technical Reports Server (NTRS)

Achilles, C. N.; Downs, G. W.; Downs, R. T.; Morris, R. V.; Rampe, E. B.; Ming, D. W.; Chipera, S. J.; Blake, D. F.; Vaniman, D. T.; Bristow, T. F.;

Graphene Carbon Nanotube Carpets Grown Using Binary Catalysts for High-Performance Lithium-Ion Capacitors.

PubMed

Salvatierra, Rodrigo Villegas; Zakhidov, Dante; Sha, Junwei; Kim, Nam Dong; Lee, Seoung-Ki; Raji, Abdul-Rahman O; Zhao, Naiqin; Tour, James M

2017-03-28

Here we show that a versatile binary catalyst solution of Fe 3 O 4 /AlO x nanoparticles enables homogeneous growth of single to few-walled carbon nanotube (CNT) carpets from three-dimensional carbon-based substrates, moving past existing two-dimensional limited growth methods. The binary catalyst is composed of amorphous AlO x nanoclusters over Fe 3 O 4 crystalline nanoparticles, facilitating the creation of seamless junctions between the CNTs and the underlying carbon platform. The resulting graphene-CNT (GCNT) structure is a high-density CNT carpet ohmically connected to the carbon substrate, an important feature for advanced carbon electronics. As a demonstration of the utility of this approach, we use GCNTs as anodes and cathodes in binder-free lithium-ion capacitors, producing stable devices with high-energy densities (∼120 Wh kg -1 ), high-power density capabilities (∼20,500 W kg -1 at 29 Wh kg -1 ), and a large operating voltage window (4.3 to 0.01 V).

Negative Magnetoresistance in Amorphous Indium Oxide Wires

PubMed Central

Mitra, Sreemanta; Tewari, Girish C; Mahalu, Diana; Shahar, Dan

2016-01-01

We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions. PMID:27876859

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

PubMed

Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

2018-02-26

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Dispersion and interaction of graphene oxide in amorphous and semi-crystalline nano-composites: a PALS study

NASA Astrophysics Data System (ADS)

Maurer, Frans H. J.; Arza, Carlos R.

2015-06-01

The influence of dispersion and interaction of Graphene Oxide (GO) in semicrystalline Polyhydroxy butyrate (PHB) and glassy amorphous Poly(tBP-oda) is explored by Positron Annihilation Lifetime Spectroscopy (PALS). The ortho-Positronium lifetimes which represent the main free volume hole size of both polymers are mainly affected by the large differences in internal stresses built up by the shrinkage of the polymers during their preparation, restricted by the platelet structure of GO. The ortho-Positronium intensities, which represent the ortho-Positronium formation probabilities, suggest a strong dependency of on the dispersion of the nano-particles and their aspect ratio.

Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

PubMed Central

Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

2016-01-01

Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency. PMID:27194181

Transmission electron microscopy of coatings formed by plasma electrolytic oxidation of titanium.

PubMed

Matykina, E; Arrabal, R; Skeldon, P; Thompson, G E

2009-05-01

Transmission electron microscopy and supporting film analyses are used to investigate the changes in composition, morphology and structure of coatings formed on titanium during DC plasma electrolytic oxidation in a calcium- and phosphorus-containing electrolyte. The coatings are of potential interest as bioactive surfaces. The initial barrier film, of mixed amorphous and nanocrystalline structure, formed below the sparking voltage of 180 V, incorporates small amounts of phosphorus and calcium species, with phosphorus confined to the outer approximately 63% of the coating thickness. On commencement of sparking, calcium- and phosphorus-rich amorphous material forms at the coating surface, with local heating promoting crystallization in underlying and adjacent anodic titania. The amorphous material thickens with increased treatment time, comprising almost the whole of the approximately 5.7-microm-thick coating formed at 340 V. At this stage, the coating is approximately 4.4 times thicker than the oxidized titanium, with a near-surface composition of about 12 at.% Ti, 58 at.% O, 19 at.% P and 11 at.% Ca. Further, the amount of titanium consumed in forming the coating is similar to that calculated from the anodizing charge, although there may be non-Faradaic contributions to the coating growth.

Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

NASA Astrophysics Data System (ADS)

Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

2016-05-01

Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency.

Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp

This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for themore » performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.« less

Deposition and Characterization of Hermetic, Biocompatible Thin Film Coatings for Implantable, Electrically Active Devices

NASA Astrophysics Data System (ADS)

Sweitzer, Robyn K.

Retinal prostheses may be used to support patients suffering from Age-related macular degeneration or retinitis pigmentosa. A hermetic encapsulation of the poly(imide )-based prosthesis is important in order to prevent the leakage of water and ions into the electric circuitry embedded in the poly(imide) matrix. The deposition of amorphous aluminum oxide (by sputtering) and diamond like carbon (by pulsed laser ablation and vacuum arc vapor deposition) were studied for the application in retinal prostheses. The resulting thin films were characterized for composition, thickness, adhesion and smoothness by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy, profilometry and light microscopy. Electrical stability was evaluated and found to be good. The as-deposited films prevented incursion of salinated fluids into the implant over two (2) three month trials soaking in normal saline at body temperature, Biocompatibility was tested in vivo by implanting coated specimen subretinally in the eye of Yucatan pigs. While amorphous aluminum oxide is more readily deposited with sufficient adhesion quality, biocompatibility studies showed a superior behavior of diamond-like carbon. Amorphous aluminum oxide had more adverse effects and caused more severe damage to the retinal tissue.

Photocatalytic activity of nanostructured ZnO-ZrO2 binary oxide using fluorometric method

NASA Astrophysics Data System (ADS)

Ibrahim, M. M.

2015-06-01

Evaluation of the photocatalytic activity of ZnO-ZrO2 nanomaterials using fluorescence based technique has rarely been reported. In the present work, ZnO-ZrO2 mixed oxides coupled with various ZnO dosages (0, 10, 30, 50, 70 wt%) were prepared by impregnation method. These nanomaterials were characterized by studying their structural, surface and optical properties. The photocatalytic activity in term of quantitative determination of the active oxidative species (radOH) produced on the surface of binary oxide was evaluated using fluorescent probe method. The interaction between ZnO and ZrO2 was affected on the photocatalytic efficiency of mixture. The results show that, the addition of ZnO to ZrO2 decreased the electron-hole recombination and increased the rate of radOH radicals formation. 50 wt% ZnO-ZrO2 photocatalyst exhibited much higher photocatalytic activity. The profound effect of binary oxide catalyst was generally considered due to the high surface area, small particle size, high monoclinic phase of ZrO2 content, low band gap and the presence of surface OH groups.

Emergent interparticle interactions in thermal amorphous solids

NASA Astrophysics Data System (ADS)

Gendelman, Oleg; Lerner, Edan; Pollack, Yoav G.; Procaccia, Itamar; Rainone, Corrado; Riechers, Birte

2016-11-01

Amorphous media at finite temperatures, be them liquids, colloids, or glasses, are made of interacting particles that move chaotically due to thermal energy, continuously colliding and scattering off each other. When the average configuration in these systems relaxes only at long times, one can introduce effective interactions that keep the mean positions in mechanical equilibrium. We introduce a framework to determine the effective force laws that define an effective Hessian that can be employed to discuss stability properties and the density of states of the amorphous system. We exemplify the approach with a thermal glass of hard spheres; these experience zero forces when not in contact and infinite forces when they touch. Close to jamming we recapture the effective interactions that at temperature T depend on the gap h between spheres as T /h [C. Brito and M. Wyart, Europhys. Lett. 76, 149 (2006), 10.1209/epl/i2006-10238-x]. For hard spheres at lower densities or for systems whose binary bare interactions are longer ranged (at any density), the emergent force laws include ternary, quaternary, and generally higher-order many-body terms, leading to a temperature-dependent effective Hessian.

In Situ Chemical Modification of Schottky Barrier in Solution-Processed Zinc Tin Oxide Diode.

PubMed

Son, Youngbae; Li, Jiabo; Peterson, Rebecca L

2016-09-14

Here we present a novel in situ chemical modification process to form vertical Schottky diodes using palladium (Pd) rectifying bottom contacts, amorphous zinc tin oxide (Zn-Sn-O) semiconductor made via acetate-based solution process, and molybdenum top ohmic contacts. Using X-ray photoelectron spectroscopy depth profiling, we show that oxygen plasma treatment of Pd creates a PdOx interface layer, which is then reduced back to metallic Pd by in situ reactions during Zn-Sn-O film annealing. The plasma treatment ensures an oxygen-rich environment in the semiconductor near the Schottky barrier, reducing the level of oxygen-deficiency-related defects and improving the rectifying contact. Using this process, we achieve diodes with high forward current density exceeding 10(3)A cm(-2) at 1 V, rectification ratios of >10(2), and ideality factors of around 1.9. The measured diode current-voltage characteristics are compared to numerical simulations of thermionic field emission with sub-bandgap states in the semiconductor, which we attribute to spatial variations in metal stoichiometry of amorphous Zn-Sn-O. To the best of our knowledge, this is the first demonstration of vertical Schottky diodes using solution-processed amorphous metal oxide semiconductor. Furthermore, the in situ chemical modification method developed here can be adapted to tune interface properties in many other oxide devices.

Development of new metal-oxide thin film gas sensors by conductivity and workfunction correlations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doll, T.; Mutschall, D.; Winter, R.

1996-12-31

Commercially available semiconducting gas sensors usually are based on tin dioxide, although there is a wide variety of metal oxides with capabilities for gas sensing. This derives from restrictions to predict the gas sensitivity under real conditions from clean surface measurements or sensitivity deviations due to different preparation techniques. Hence tedious sample variation and testing is required. It is known that beside pure conductivity studies, combined methods provide a better distinction between preparation-dependent and general chemical effects. For samples with a polycrystalline grain size smaller than the Debye length of the material the correlation of workfunction responses A{Delta}{Phi} to conductivitymore » measurements with the relation {Delta}{Phi} {approximately} log G is one powerful combination. In the present paper, this comparison is shown for nickel oxide layers prepared in two different ways: Reactive sputtering, which leads to partly polycrystalline layers of grain sizes of about 5 to 15 nm according to, and amorphous nickel oxide prepared by ozone enhanced molecular beam epitaxy. The work function and conductivity responses to H{sub 2}, NH{sub 3}, NO{sub 2}, SO{sub 2}, CO and Cl{sub 2} in synthetic air show a very similar sensitivity for the amorphous and the polycrystalline nickeloxides which indicates that the above mentioned correlation range includes amorphous states, too.« less

Creation of high-refractive-index amorphous titanium oxide thin films from low-fractal-dimension polymeric precursors synthesized by a sol-gel technique with a hydrazine monohydrochloride catalyst.

PubMed

Shimizu, Wataru; Nakamura, Satoshi; Sato, Takaaki; Murakami, Yasushi

2012-08-21

Amorphous titanium dioxide (TiO(2)) thin films exhibiting high refractive indices (n ≈ 2.1) and high transparency were fabricated by spin-coating titanium oxide liquid precursors having a weakly branched polymeric structure. The precursor solution was prepared from titanium tetra-n-butoxide (TTBO) via the catalytic sol-gel process with hydrazine monohydrochloride used as a salt catalyst, which serves as a conjugate acid-base pair catalyst. Our unique catalytic sol-gel technique accelerated the overall polycondensation reaction of partially hydrolyzed alkoxides, which facilitated the formation of liner polymer-like titanium oxide aggregates having a low fractal dimension of ca. (5)/(3), known as a characteristic of the so-called "expanded polymer chain". Such linear polymeric features are essential to the production of highly dense amorphous TiO(2) thin films; mutual interpenetration of the linear polymeric aggregates avoided the creation of void space that is often generated by the densification of high-fractal-dimension (particle-like) aggregates produced in a conventional sol-gel process. The mesh size of the titanium oxide polymers can be tuned either by water concentration or the reaction time, and the smaller mesh size in the liquid precursor led to a higher n value of the solid thin film, thanks to its higher local electron density. The reaction that required no addition of organic ligand to stabilize titanium alkoxides was advantageous to overcoming issues from organic residues such as coloration. The dense amorphous film structure suppressed light scattering loss owing to its extremely smooth surface and the absence of inhomogeneous grains or particles. Furthermore, the fabrication can be accomplished at a low heating temperature of <80 °C. Indeed, we successfully obtained a transparent film with a high refractive index of n = 2.064 (at λ = 633 nm) on a low-heat-resistance plastic, poly(methyl methacrylate), at 60 °C. The result offers an efficient route to high-refractive-index amorphous TiO(2) films as well as base materials for a wider range of applications.

High-Energy Ball Milling as Green Process To Vitrify Tadalafil and Improve Bioavailability.

PubMed

Krupa, Anna; Descamps, Marc; Willart, Jean-François; Strach, Beata; Wyska, Elżbieta; Jachowicz, Renata; Danède, Florence

2016-11-07

In this study, the suitability of high-energy ball milling was investigated with the aim to vitrify tadalafil (TD) and improve its bioavailability. To achieve this goal, pure TD as well as binary mixtures composed of the drug and Soluplus (SL) were coprocessed by high-energy ball milling. Modulated differential scanning calorimetry (MDSC) and X-ray powder diffraction (XRD) demonstrated that after such coprocessing, the crystalline form of TD was transformed into an amorphous form. The presence of a single glass transition (T g ) for all the comilled formulations indicated that TD was dispersed into SL at the molecular level, forming amorphous molecular alloys, regardless of the drug concentration. The high values of T g determined for amorphous formulations, ranging from 70 to 147 °C, foreshow their high stability during storage at room temperature, which was verified by XRD and MDSC studies. The stabilizing effect of SL on the amorphous form of TD in comilled formulations was confirmed. Dissolution tests showed immediate drug release with sustained supersaturation in either simulated gastric fluid of pH 1.2 or in phosphate buffer of pH 7.2. The beneficial effect of both amorphization and coamorphization on the bioavailability of TD was found. In comparison to aqueous suspension, the relative bioavailability of TD was only 11% for its crystalline form and 53% for the crystalline physical mixture, whereas the bioavailability of milled amorphous TD and the comilled solid dispersion was 128% and 289%, respectively. Thus, the results provide evidence that not only the presence of polymeric surfactant but also the vitrification of TD is necessary to improve bioavailability.

Recent Progress in Some Amorphous Materials for Supercapacitors.

PubMed

Li, Qing; Xu, Yuxia; Zheng, Shasha; Guo, Xiaotian; Xue, Huaiguo; Pang, Huan

2018-05-14

A breakthrough in technologies having "green" and sustainable energy storage conversion is urgent, and supercapacitors play a crucial role in this area of research. Owing to their unique porous structure, amorphous materials are considered one of the best active materials for high-performance supercapacitors due to their high specific capacity, excellent cycling stability, and fast charging rate. This Review summarizes the synthesis of amorphous materials (transition metal oxides, carbon-based materials, transition metal sulfides, phosphates, hydroxides, and their complexes) to highlight their electrochemical performance in supercapacitors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Chirality recognition in the glycidol···propylene oxide complex: a rotational spectroscopic study.

PubMed

Thomas, Javix; Sunahori, Fumie X; Borho, Nicole; Xu, Yunjie

2011-04-11

Chirality recognition in the hydrogen-bonded glycidol···propylene oxide complex has been studied by using rotational spectroscopy and ab initio calculations. An extensive conformational search has been performed for this binary adduct at the MP2/6-311++G(d,p) level of theory and a total of 28 homo- and heterochiral conformers were identified. The eight binary conformers, built of the two dominant glycidol monomeric conformers, g-G+ and g+G-, were predicted to be the most stable ones. Jet-cooled rotational spectra of six out of the eight conformers were observed and unambiguously assigned for the first time. The experimental stability ordering has been obtained and compared with the ab initio predictions. The relative stability of the two dominant glycidol monomeric conformers is reversed in some cases when binding to propylene oxide. The contributions of monomeric energy, deformation energy, and binary intermolecular interaction energy to the relative stability of the binary conformers are discussed. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry.

PubMed

Lee, Chanwoo; Kim, Inpyo; Choi, Wonsup; Shin, Hyunjung; Cho, Jinhan

2009-04-21

We describe a novel and versatile approach for preparing resistive switching memory devices based on binary transition metal oxides (TMOs). Titanium isopropoxide (TIPP) was spin-coated onto platinum (Pt)-coated silicon substrates using a sol-gel process. The sol-gel-derived layer was converted into a TiO2 film by thermal annealing. A top electrode (Ag electrode) was then coated onto the TiO2 films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (about 0.6 VRESET and 1.4 VSET). In addition, it was confirmed that the electrical properties (i.e., retention time, cycling test and switching speed) of the sol-gel-derived devices were comparable to those of vacuum deposited devices. This approach can be extended to a variety of binary TMOs such as niobium oxides. The reported approach offers new opportunities for preparing the binary TMO-based resistive switching memory devices allowing a facile solution processing.

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

PubMed Central

Noviyana, Imas; Lestari, Annisa Dwi; Putri, Maryane; Won, Mi-Sook; Bae, Jong-Seong; Heo, Young-Woo; Lee, Hee Young

2017-01-01

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. PMID:28773058

Nanopillar arrays of amorphous carbon nitride

NASA Astrophysics Data System (ADS)

Sai Krishna, Katla; Pavan Kumar, B. V. V. S.; Eswaramoorthy, Muthusamy

2011-07-01

Nanopillar arrays of amorphous carbon nitride have been prepared using anodic aluminum oxide (AAO) membrane as a template. The amine groups present on the surface of these nanopillars were exploited for functionalization with oleic acid in order to stabilize the nanostructure at the aqueous-organic interface and also for the immobilization of metal nanoparticles and protein. These immobilised nanoparticles were found to have good catalytic activity.

R&D issues in scale-up and manufacturing of amorphous silicon tandem modules

NASA Astrophysics Data System (ADS)

Arya, R. R.; Carlson, D. E.; Chen, L. F.; Ganguly, G.; He, M.; Lin, G.; Middya, R.; Wood, G.; Newton, J.; Bennett, M.; Jackson, F.; Willing, F.

1999-03-01

R & D on amorphous silicon based tandem junction devices has improved the throughtput, the material utilization, and the performance of devices on commercial tin oxide coated glass. The tandem junction technology has been scaled-up to produce 8.6 Ft2 monolithically integrated modules in manufacturing at the TF1 plant. Optimization of performance and stability of these modules is ongoing.

Design and synthesis of inorganic/organic hybrid electrochemical materials

NASA Astrophysics Data System (ADS)

Harreld, John H.

An ambient pressure method for drying sol-gel materials is developed to synthesize high porosity (80--90%), high surface area vanadium oxide and silica aerogel materials (150--300 and 1000 m2/g for vanadium pentoxide and silica, respectively). The synthesis approach uses liquid exchange to replace the pore fluid with a low surface tension, nonpolar solvent which reduces the capillary pressures developed during drying. The Good-Girifalco interaction parameter is used to calculate pore stresses resulting from drying silica gels from various liquids. Vanadium oxide/polypyrrole hybrid aerogels are prepared using three strategies. These approaches focus on either sequential or consecutive polymerization of the inorganic and organic networks. Microcomposite aerogels are synthesized by encapsulating a dispersion of preformed polypyrrole in a vanadium pentoxide gel. In the second approach, pyrrole is polymerized and doped within the pore volume of preformed vanadium pentoxide gel. When the inorganic and organic precursors are polymerized simultaneously, the resulting gels exhibited a nanometer scaled microstructure with homogeneous distributions of either phases. Through this route, a suitable microstructure and composition for a lithium secondary battery cathode is obtained. Lithiated aerogels of hydrated nickel, cobalt, and mixed nickel-cobalt oxides are synthesized from lithium hydroxide and transition metal acetate precursors. The XRD analyses indicate that the nickel containing gels exhibit a lithium deficiency (less than 1 Li/transition metal. By increasing the concentration of the lithium precursor the lithium content in nickel oxides is increased, and additional base solution is no longer required to catalyze gelation. A non-hydrolytic sol-gel approach is utilized to create tin oxide and tin-aluminum binary oxide aerogels with high porosity (90%) and high surface area (300 m2/g). XRD data from single phase tin oxide aerogel indicates the growth of SnO2 crystallites between 150--400°C in air, accompanied by a reduction in surface area (30 m2/g). Heated tin oxide aerogel exhibits comparable reversible specific capacity (390 mAh/g) as that of commercial SnO2 (420 mAh/g). Amorphous tin oxide aerogel is stabilized to higher temperatures when aluminum oxide is incorporated into the structure. The tin oxide phase remains electrochemically active towards lithium insertion and exhibits excellent reversibility during cycling.

Oxidation of diesel soot on binary oxide CuCr(Co)-based monoliths.

PubMed

Soloviev, Sergiy O; Kapran, Andriy Y; Kurylets, Yaroslava P

2015-02-01

Binary oxide systems (CuCr2O4, CuCo2O4), deposited onto cordierite monoliths of honeycomb structure with a second support (finely dispersed Al2O3), were prepared as filters for catalytic combustion of diesel soot using internal combustion engine's gas exhausts (O2, NOx, H2O, CO2) and O3 as oxidizing agents. It is shown that the second support increases soot capacity of aforementioned filters, and causes dispersion of the particles of spinel phases as active components enhancing thereby catalyst activity and selectivity of soot combustion to CO2. Oxidants used can be arranged with reference to decreasing their activity in a following series: O3≫NO2>H2O>NO>O2>CO2. Ozone proved to be the most efficient oxidizing agent: the diesel soot combustion by O3 occurs intensively (in the presence of copper chromite based catalyst) even at closing to ambient temperatures. Results obtained give a basis for the conclusion that using a catalytic coating on soot filters in the form of aforementioned binary oxide systems and ozone as the initiator of the oxidation processes is a promising approach in solving the problem of comprehensive purification of automotive exhaust gases at relatively low temperatures, known as the "cold start" problem. Copyright © 2014. Published by Elsevier B.V.

Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).

PubMed

Kim, Choong-Ki; Kim, Eungtaek; Lee, Myung Keun; Park, Jun-Young; Seol, Myeong-Lok; Bae, Hagyoul; Bang, Tewook; Jeon, Seung-Bae; Jun, Sungwoo; Park, Sang-Hee K; Choi, Kyung Cheol; Choi, Yang-Kyu

2016-09-14

An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In-Ga-Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (gm), 158% for the linear current (Ilinear), and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized.

A hierarchical nanostructure consisting of amorphous MnO 2, Mn 3O 4 nanocrystallites, and single-crystalline MnOOH nanowires for supercapacitors

NASA Astrophysics Data System (ADS)

Hu, Chi-Chang; Hung, Ching-Yun; Chang, Kuo-Hsin; Yang, Yi-Lin

In this communication, a porous hierarchical nanostructure consisting of amorphous MnO 2 (a-MnO 2), Mn 3O 4 nanocrystals, and single-crystalline MnOOH nanowires is designed for the supercapacitor application, which is prepared by a simple two-step electrochemical deposition process. Because of the gradual co-transformation of Mn 3O 4 nanocrystals and a-MnO 2 nanorods into an amorphous manganese oxide, the cycle stability of a-MnO 2 is obviously enhanced by adding Mn 3O 4. This unique ternary oxide nanocomposite with 100-cycle CV activation exhibits excellent capacitive performances, i.e., excellent reversibility, high specific capacitances (470 F g -1 in CaCl 2), high power property, and outstanding cycle stability. The highly porous microstructures of this composite before and after the 10,000-cycle CV test are examined by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM).

Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

NASA Astrophysics Data System (ADS)

Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

2016-03-01

Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces.

PubMed

Gurbán, S; Petrik, P; Serényi, M; Sulyok, A; Menyhárd, M; Baradács, E; Parditka, B; Cserháti, C; Langer, G A; Erdélyi, Z

2018-02-01

Al 2 O 3 (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10 -9 mbar) and formation of amorphous SiO 2 around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardment induced bond breaking in Al 2 O 3 and the subsequent production of neutral and/or charged oxygen. The amorphous SiO 2 rich layer has grown into the Al 2 O 3 layer showing that oxygen as well as silicon transport occurred during irradiation at room temperature. We propose that both transports are mediated by local electric field and charged and/or uncharged defects created by the electron irradiation. The direct modification of metal oxide/silicon interface by electron-beam irradiation is a promising method of accomplishing direct write electron-beam lithography at buried interfaces.

Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors

NASA Astrophysics Data System (ADS)

Lee, Sunghwan; Song, Yang; Park, Hongsik; Zaslavsky, A.; Paine, D. C.

2017-09-01

Amorphous oxide semiconductors (AOSs) based on indium oxides are of great interest for next generation ultra-high definition displays that require much smaller pixel driving elements. We describe the scaling behavior in amorphous InZnO thin film transistors (TFTs) with a significant decrease in the extracted field-effect mobility μFE with channel length L (from 39.3 to 9.9 cm2/V·s as L is reduced from 50 to 5 μm). Transmission line model measurements reveal that channel scaling leads to a significant μFE underestimation due to contact resistance (RC) at the metallization/channel interface. Therefore, we suggest a method of extracting correct μFE when the TFT performance is significantly affected by RC. The corrected μFE values are higher (45.4 cm2/V·s) and nearly independent of L. The results show the critical effect of contact resistance on μFE measurements and suggest strategies to determine accurate μFE when a TFT channel is scaled.

Conducting interface in oxide homojunction: Understanding of superior properties in black TiO 2

DOE PAGES

Lu, Xujie; Chen, Aiping; Luo, Yongkang; ...

2016-09-14

Black TiO 2 nanoparticles with a crystalline core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO 2. The fundamental mechanisms underlying these enhancements, however, remain unclear, largely due to the inherent complexities and limitations of powder materials. Here, we fabricate TiO 2 homojunction films consisting of an oxygen-deficient amorphous layer on top of a highly crystalline layer, to simulate the structural/functional configuration of black TiO 2 nanoparticles. Metallic conduction is achieved at the crystalline–amorphous homointerface via electronic interface reconstruction, which we show to be the main reason for the enhanced electron transport of black TiO 2.more » As a result, this work not only achieves an unprecedented understanding of black TiO 2 but also provides a new perspective for investigating carrier generation and transport behavior at oxide interfaces, which are of tremendous fundamental and technological interest.« less

Sputtered boron indium oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

2017-11-01

Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

2001-01-01

A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

2000-01-01

A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Oxygen absorption in free-standing porous silicon: a structural, optical and kinetic analysis.

PubMed

Cisneros, Rodolfo; Pfeiffer, Heriberto; Wang, Chumin

2010-01-16

Porous silicon (PSi) is a nanostructured material possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and frequently cause significant changes in its properties. In this paper, we study the thermal oxidation of p+-type free-standing PSi fabricated by anodic electrochemical etching. These free-standing samples were characterized by nitrogen adsorption, thermogravimetry, atomic force microscopy and powder X-ray diffraction. The results show a structural phase transition from crystalline silicon to a combination of cristobalite and quartz, passing through amorphous silicon and amorphous silicon-oxide structures, when the thermal oxidation temperature increases from 400 to 900 °C. Moreover, we observe some evidence of a sinterization at 400 °C and an optimal oxygen-absorption temperature about 700 °C. Finally, the UV/Visible spectrophotometry reveals a red and a blue shift of the optical transmittance spectra for samples with oxidation temperatures lower and higher than 700 °C, respectively.

Linear topology in amorphous metal oxide electrochromic networks obtained via low-temperature solution processing

NASA Astrophysics Data System (ADS)

Llordés, Anna; Wang, Yang; Fernandez-Martinez, Alejandro; Xiao, Penghao; Lee, Tom; Poulain, Agnieszka; Zandi, Omid; Saez Cabezas, Camila A.; Henkelman, Graeme; Milliron, Delia J.

2016-12-01

Amorphous transition metal oxides are recognized as leading candidates for electrochromic window coatings that can dynamically modulate solar irradiation and improve building energy efficiency. However, their thin films are normally prepared by energy-intensive sputtering techniques or high-temperature solution methods, which increase manufacturing cost and complexity. Here, we report on a room-temperature solution process to fabricate electrochromic films of niobium oxide glass (NbOx) and `nanocrystal-in-glass’ composites (that is, tin-doped indium oxide (ITO) nanocrystals embedded in NbOx glass) via acid-catalysed condensation of polyniobate clusters. A combination of X-ray scattering and spectroscopic characterization with complementary simulations reveals that this strategy leads to a unique one-dimensional chain-like NbOx structure, which significantly enhances the electrochromic performance, compared to a typical three-dimensional NbOx network obtained from conventional high-temperature thermal processing. In addition, we show how self-assembled ITO-in-NbOx composite films can be successfully integrated into high-performance flexible electrochromic devices.

Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method

NASA Astrophysics Data System (ADS)

Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun

2017-04-01

Amorphous oxide semiconductor thin-film transistors (TFT) have been considered as outstanding switch devices owing to their high mobility. However, because of their amorphous channel material with a certain level of density of states, a fast transient charging effect in an oxide TFT occurs, leading to an underestimation of the mobility value. In this paper, the effects of the fast charging of high-performance bilayer oxide semiconductor TFTs on mobility are examined in order to determine an accurate mobility extraction method. In addition, an approach based on a pulse I D -V G measurement method is proposed to determine the intrinsic mobility value. Even with the short pulse I D -V G measurement, a certain level of fast transient charge trapping cannot be avoided as long as the charge-trap start time is shorter than the pulse rising time. Using a pulse-amplitude-dependent threshold voltage characterization method, we estimated a correction factor for the apparent mobility, thus allowing us to determine the intrinsic mobility.

Comprehensive review on the development of high mobility in oxide thin film transistors

NASA Astrophysics Data System (ADS)

Choi, Jun Young; Lee, Sang Yeol

2017-11-01

Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

Properties of Amorphous Carbon Microspheres Synthesised by Palm Oil-CVD Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zobir, S. A. M.; Nano-SciTech Centre,; Zainal, Z.

2011-03-30

Amorphous carbon microspheres were synthesized using a dual-furnace chemical vapour deposition method at 800-1000 deg. C. Palm oil-based cooking oil (PO) and zinc nitrate solution was used as a carbon source and catalyst precursor, respectively with PO to zinc nitrate ratio of 30:20 (v/v) and a silicon wafer as the sample target. Regular microsphere shape of the amorphous carbons was obtained and a uniform microsphere structure improved as the carbonization temperature increased from 800 to 1000 deg. C. At 800 deg. C, no regular microspheres were formed but more uniform structure is observed at 900 deg. C. Generally the microspheresmore » size is uniform when the heating temperature was increased to 1000 deg. C, but the presence of mixed sizes can still be observed. X-ray diffraction patterns show the presence of oxide of carbon, ZnO phase together with Zn oxalate phase. Raman spectra show two broad peaks characteristic to amorphous carbon at 1344 and 1582 cm{sup -1} for the D and G bands, respectively. These bands become more prominent as the preparation temperature increased from 800 to 1000 deg. C. This is in agreement with the formation of amorphous carbon microspheres as shown by the FESEM study and other Zn-based phases as a result of the oxidation process of the palm oil as the carbon source and the zinc nitrate as the catalyst precursor, respectively.« less

High performance of SDC and GDC core shell type composite electrolytes using methane as a fuel for low temperature SOFC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Irshad, Muneeb; Siraj, Khurram, E-mail: razahussaini786@gmail.com, E-mail: khurram.uet@gmail.com; Javed, Fayyaz

Nanocomposites Samarium doped Ceria (SDC), Gadolinium doped Ceria (GDC), core shell SDC amorphous Na{sub 2}CO{sub 3} (SDCC) and GDC amorphous Na{sub 2}CO{sub 3} (GDCC) were synthesized using co-precipitation method and then compared to obtain better solid oxide electrolytes materials for low temperature Solid Oxide Fuel Cell (SOFCs). The comparison is done in terms of structure, crystallanity, thermal stability, conductivity and cell performance. In present work, XRD analysis confirmed proper doping of Sm and Gd in both single phase (SDC, GDC) and dual phase core shell (SDCC, GDCC) electrolyte materials. EDX analysis validated the presence of Sm and Gd in bothmore » single and dual phase electrolyte materials; also confirming the presence of amorphous Na{sub 2}CO{sub 3} in SDCC and GDCC. From TGA analysis a steep weight loss is observed in case of SDCC and GDCC when temperature rises above 725 °C while SDC and GDC do not show any loss. The ionic conductivity and cell performance of single phase SDC and GDC nanocomposite were compared with core shell GDC/amorphous Na{sub 2}CO{sub 3} and SDC/ amorphous Na{sub 2}CO{sub 3} nanocomposites using methane fuel. It is observed that dual phase core shell electrolytes materials (SDCC, GDCC) show better performance in low temperature range than their corresponding single phase electrolyte materials (SDC, GDC) with methane fuel.« less

In situ evolution of highly dispersed amorphous CoO x clusters for oxygen evolution reaction

DOE PAGES

Chen, Dawei; Dong, Chung-Li; Zou, Yuqin; ...

2017-07-24

Electrocatalytic water splitting is a key technique to produce hydrogen fuels, which can be considered as an efficient strategy to store renewable energy. Oxygen evolution reaction (OER) that occurs at the anode side requires a four-electron transfer under highly oxidizing conditions. OER has a large overpotential and therefore determines the overall efficiency. Certain electrocatalysts can efficiently help to improve the reaction kinetics. Owing to the high cost of precious metals such as Pt, Ru, and Ir, non-precious metal oxide catalysts have been vigorously investigated under alkaline conditions. Herein, we synthesized novel highly dispersed amorphous CoO x for the first timemore » in the form of a cluster favorable to enhance the OER activity using a facile method via the air dielectric barrier discharge (DBD) plasma. Compared with the pristine biopolymer–cobalt complex, the amorphous CoO x cluster exhibits a much higher current density and a lower overpotential for OER, e.g., the overpotential of 290 mV at 10 mA cm -2 and the overpotential of only 350 mV at 300 mA cm -1. The excellent electrocatalytic OER activity was attributed to the unsaturated catalytic sites on the amorphous CoO x cluster. In addition, we studied the reaction mechanism, and it was observed that pure O 2 DBD plasma could lead to the evolution of crystalline CoO x; however, the presence of N 2 and O 2 in DBD plasma could ensure the facile evolution of amorphous CoO x clusters. This study provides a new strategy, therefore, to design amorphous materials for electrocatalysis and beyond.« less

In situ evolution of highly dispersed amorphous CoO x clusters for oxygen evolution reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Dawei; Dong, Chung-Li; Zou, Yuqin

Electrocatalytic water splitting is a key technique to produce hydrogen fuels, which can be considered as an efficient strategy to store renewable energy. Oxygen evolution reaction (OER) that occurs at the anode side requires a four-electron transfer under highly oxidizing conditions. OER has a large overpotential and therefore determines the overall efficiency. Certain electrocatalysts can efficiently help to improve the reaction kinetics. Owing to the high cost of precious metals such as Pt, Ru, and Ir, non-precious metal oxide catalysts have been vigorously investigated under alkaline conditions. Herein, we synthesized novel highly dispersed amorphous CoO x for the first timemore » in the form of a cluster favorable to enhance the OER activity using a facile method via the air dielectric barrier discharge (DBD) plasma. Compared with the pristine biopolymer–cobalt complex, the amorphous CoO x cluster exhibits a much higher current density and a lower overpotential for OER, e.g., the overpotential of 290 mV at 10 mA cm -2 and the overpotential of only 350 mV at 300 mA cm -1. The excellent electrocatalytic OER activity was attributed to the unsaturated catalytic sites on the amorphous CoO x cluster. In addition, we studied the reaction mechanism, and it was observed that pure O 2 DBD plasma could lead to the evolution of crystalline CoO x; however, the presence of N 2 and O 2 in DBD plasma could ensure the facile evolution of amorphous CoO x clusters. This study provides a new strategy, therefore, to design amorphous materials for electrocatalysis and beyond.« less

Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier

NASA Astrophysics Data System (ADS)

Mešić, Biljana; Schroeder, Herbert

2011-09-01

The high permittivity perovskite oxides have been intensively investigated for their possible application as dielectric materials for stacked capacitors in dynamic random access memory circuits. For the integration of such oxide materials into the CMOS world, a conductive diffusion barrier is indispensable. An optimized stack p++-Si/Pt/Ta21Si57N21/Ir was developed and used as the bottom electrode for the oxide dielectric. The amorphous TaSiN film as oxygen diffusion barrier showed excellent conductive properties and a good thermal stability up to 700 °C in oxygen ambient. The additional protective iridium layer improved the surface roughness after annealing. A 100-nm-thick (Ba,Sr)TiO3 film was deposited using pulsed laser deposition at 550 °C, showing very promising properties for application; the maximum relative dielectric constant at zero field is κ ≈ 470, and the leakage current density is below 10-6 A/cm2 for fields lower then ± 200 kV/cm, corresponding to an applied voltage of ± 2 V.

Band gap tuning of amorphous Al oxides by Zr alloying

DOE Office of Scientific and Technical Information (OSTI.GOV)

Canulescu, S., E-mail: stec@fotonik.dtu.dk; Schou, J.; Jones, N. C.

2016-08-29

The optical band gap and electronic structure of amorphous Al-Zr mixed oxides with Zr content ranging from 4.8 to 21.9% were determined using vacuum ultraviolet and X-ray absorption spectroscopy. The light scattering by the nano-porous structure of alumina at low wavelengths was estimated based on the Mie scattering theory. The dependence of the optical band gap of the Al-Zr mixed oxides on the Zr content deviates from linearity and decreases from 7.3 eV for pure anodized Al{sub 2}O{sub 3} to 6.45 eV for Al-Zr mixed oxides with a Zr content of 21.9%. With increasing Zr content, the conduction band minimum changes non-linearlymore » as well. Fitting of the energy band gap values resulted in a bowing parameter of ∼2 eV. The band gap bowing of the mixed oxides is assigned to the presence of the Zr d-electron states localized below the conduction band minimum of anodized Al{sub 2}O{sub 3}.« less

Alumina-supported sub-nanometer Pt 10 clusters: Amorphization and role of the support material in a highly active CO oxidation catalyst

DOE PAGES

Yin, Chunrong; Negreiros, Fabio R.; Barcaro, Giovanni; ...

2017-02-03

Catalytic CO oxidation is unveiled on size-selected Pt 10 clusters deposited on two very different ultrathin (≈0.5–0.7 nm thick) alumina films: (i) a highly ordered alumina obtained under ultra-high vacuum (UHV) by oxidation of the NiAl(110) surface and (ii) amorphous alumina obtained by atomic layer deposition (ALD) on a silicon chip that is a close model of real-world supports. Notably, when exposed to realistic reaction conditions, the Pt 10/UHV-alumina system undergoes a morphological transition in both the clusters and the substrate, and becomes closely akin to Pt 10/ALD-alumina, thus reconciling UHV-type surface-science and real-world experiments. The Pt 10 clusters, thoroughlymore » characterized via combined experimental techniques and theoretical analysis, exhibit among the highest CO oxidation activity per Pt atom reported for CO oxidation catalysts, due to the interplay of ultra-small size and support effects. Lastly, a coherent interdisciplinary picture then emerges for this catalytic system.« less

Effects of surface poisons on the oxidation of binary alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hagan, P.S.; Polizzotti, R.S.; Luckman, G.

1985-10-01

A system of reaction-diffusion equations describing the oxidation of binary alloys in environments containing small amounts of surface poisons is analyzed. These poisons reduce the oxygen flux into the alloy, which causes the alloy to oxidize in two stages.During the initial stage, the oxidation reaction occurs in a stationary boundary layer at the alloy surface. Consequently, a thin zone containing a very high concentration of the metal oxide is created at the alloy surface. During the second stage, the oxidation reaction occurs in a moving boundary layer. This leads to a Stefan problem, which is analyzed by using asymptotic andmore » numerical techniques. By comparing the solutions to those of alloys in unpoisoned environments, it is concluded that surface poisons can lead to the formation of protective external oxide scales in alloys which would not normally form such scales. 11 references.« less

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

NASA Astrophysics Data System (ADS)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

Toxicity of binary mixtures of metal oxide nanoparticles to Nitrosomonas europaea.

PubMed

Yu, Ran; Wu, Junkang; Liu, Meiting; Zhu, Guangcan; Chen, Lianghui; Chang, Yan; Lu, Huijie

2016-06-01

Although the widely used metal oxide nanoparticles (NPs) titanium dioxide NPs (n-TiO2), cerium dioxide NPs (n-CeO2), and zinc oxide NPs (n-ZnO) have been well known for their potential cytotoxicities to environmental organisms, their combined effects have seldom been investigated. In this study, the short-term binary effect of n-CeO2 and n-TiO2 or n-ZnO on a model ammonia oxidizing bacterium, Nitrosomonas europaea were evaluated based on the examinations of cells' physiological, metabolic, and transcriptional responses. The addition of n-TiO2 mitigated the negative effect of more toxic n-CeO2 and the binary toxicity (antagonistic toxicity) of n-TiO2 and n-CeO2 was generally lower than the single NPs induced one. While the n-CeO2/n-ZnO mixture exerted higher cytotoxicity (synergistic cytotoxicity) than that from single NPs. The increased addition of the less toxic n-CeO2 exaggerated the binary toxicity of n-CeO2/n-ZnO mixture although the solubility of n-ZnO was not significantly affected, which excluded the contribution of the dissolved Zn ions to the enhancement of the combined cytotoxicity. The cell membrane disturbances and NP internalizations were detected for all the NP impacted cultures and the electrostatic interactions among the two distinct NPs and the cells were expected to play a key role in mediating their direct contacts and the eventual binary nanotoxicity to the cells. Copyright © 2016 Elsevier Ltd. All rights reserved.

Oxidation of ultrathin GaSe

DOE PAGES

Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; ...

2015-10-26

Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga 2Se 3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

Oxidation resistance of biochars as a function of feedstock and pyrolysis condition.

PubMed

Han, Lanfang; Ro, Kyoung S; Wang, Yu; Sun, Ke; Sun, Haoran; Libra, Judy A; Xing, Baoshan

2018-03-01

Assessing biochar's ability to resist oxidation is fundamental to understanding its potential to sequester carbon. Chemical oxidation exhibits good performance in estimating the oxidation resistance of biochar. Herein, oxidation resistance of 14 types of biochars produced from four feedstocks at different pyrolysis conditions (hydrothermal versus thermal carbonization) was investigated via hydrogen peroxide oxidation with varying concentrations. The oxidation resistance of organic carbon (C) of hydrochars was relatively higher than that of 250°C pyrochars (P250) but was comparable to that of 450°C pyrochars (P450). Both hydrochars and P450 from ash-rich feedstocks contained at least three different C pools (5.9-18.3% labile, 43.2-56.5% semi-labile and 26.9-45.9% stable C). Part (<33%) of aromatic C within 600°C pyrochars (P600) was easily oxidizable, which consisted of amorphous C. The influence of pyrolysis temperature upon oxidation resistance of biochars depended on the feedstock. For ash-rich feedstock (rice straw, swine manure and poultry litter), the oxidation resistance of biochars was determined by both aromaticity and mineral components, and mineral protection was regulated by pyrolysis conditions. The amorphous silicon within hydrochars and P450 could interact with C, preventing C from being oxidized, to some extent. Nevertheless, this type of protection did not occur for P250 and P600. Copyright © 2017 Elsevier B.V. All rights reserved.

Electrical transport properties in indium tin oxide films prepared by electron-beam evaporation

NASA Astrophysics Data System (ADS)

Liu, X. D.; Jiang, E. Y.; Zhang, D. X.

2008-10-01

Amorphous and polycrystalline indium tin oxide films have been prepared by electron-beam evaporation method. The amorphous films exhibit semiconductor behavior, while metallic conductivity is observed in the polycrystalline samples. The magnetoconductivities of the polycrystalline films are positive at low temperatures and can be well described by the theory of three-dimensional weak-localization effect. In addition, the electron phase-breaking rate is proportional to T3/2. Comparing the experimental results with theory, we find that the electron-electron scattering is the dominant destroyer of the constructive interference in the films. In addition, the Coulomb interaction is the main contribution to the nontrivial corrections for the electrical conductivity at low temperatures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aikawa, Shinya, E-mail: aikawa@cc.kogakuin.ac.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015; Mitoma, Nobuhiko

We discuss the environmental instability of amorphous indium oxide (InO{sub x})-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InO{sub x} doped with low and high concentrations of oxygen binder (SiO{sub 2}) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO{sub 2} could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTsmore » with stable electrical properties.« less

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

NASA Astrophysics Data System (ADS)

Hwang, Ah Young; Kim, Sang Tae; Ji, Hyuk; Shin, Yeonwoo; Jeong, Jae Kyeong

2016-04-01

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm2/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (VTH) of 1.5 V, and ION/OFF ratio of ˜107. A significant improvement in the field-effect mobility (up to ˜33.5 cm2/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, VTH, or ION/OFF ratio due to the presence of a highly ordered microstructure.

Using machine learning to identify factors that govern amorphization of irradiated pyrochlores

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pilania, Ghanshyam; Whittle, Karl R.; Jiang, Chao

Structure–property relationships are a key materials science concept that enables the design of new materials. In the case of materials for application in radiation environments, correlating radiation tolerance with fundamental structural features of a material enables materials discovery. Here, we use a machine learning model to examine the factors that govern amorphization resistance in the complex oxide pyrochlore (A 2B 2O 7) in a regime in which amorphization occurs as a consequence of defect accumulation. We examine the fidelity of predictions based on cation radii and electronegativities, the oxygen positional parameter, and the energetics of disordering and amorphizing the material.more » No one factor alone adequately predicts amorphization resistance. We find that when multiple families of pyrochlores (with different B cations) are considered, radii and electronegativities provide the best prediction, but when the machine learning model is restricted to only the B = Ti pyrochlores, the energetics of disordering and amorphization are critical factors. We discuss how these static quantities provide insight into an inherently kinetic property such as amorphization resistance at finite temperature. Lastly, this work provides new insight into the factors that govern the amorphization susceptibility and highlights the ability of machine learning approaches to generate that insight.« less

Using machine learning to identify factors that govern amorphization of irradiated pyrochlores

DOE PAGES

Pilania, Ghanshyam; Whittle, Karl R.; Jiang, Chao; ...

2017-02-10

Structure–property relationships are a key materials science concept that enables the design of new materials. In the case of materials for application in radiation environments, correlating radiation tolerance with fundamental structural features of a material enables materials discovery. Here, we use a machine learning model to examine the factors that govern amorphization resistance in the complex oxide pyrochlore (A 2B 2O 7) in a regime in which amorphization occurs as a consequence of defect accumulation. We examine the fidelity of predictions based on cation radii and electronegativities, the oxygen positional parameter, and the energetics of disordering and amorphizing the material.more » No one factor alone adequately predicts amorphization resistance. We find that when multiple families of pyrochlores (with different B cations) are considered, radii and electronegativities provide the best prediction, but when the machine learning model is restricted to only the B = Ti pyrochlores, the energetics of disordering and amorphization are critical factors. We discuss how these static quantities provide insight into an inherently kinetic property such as amorphization resistance at finite temperature. Lastly, this work provides new insight into the factors that govern the amorphization susceptibility and highlights the ability of machine learning approaches to generate that insight.« less

Stable amorphous binary systems of glipizide and atorvastatin powders with enhanced dissolution profiles: formulation and characterization.

PubMed

Renuka; Singh, Sachin Kumar; Gulati, Monica; Narang, Rakesh

2017-02-01

The aim of this study was to enhance the dissolution profile of the combination of glipizide and atorvastatin used for simultaneous treatment of hyperglycemia and hyperlipidemia. The strategy to formulate coamorphous glipizide-atorvastatin binary mixture was explored to achieve enhancement in dissolution. The coamorphous glipizide-atorvastatin mixtures (1:1, 1:2 and 2:1) were prepared by cryomilling and characterized with respect to their dissolution profiles, preformulation parameters and physical stability. Amorphization was found to be possible by cryomilling at various tried ratios of the two drugs. The data obtained from glass transition temperatures and from Raman spectroscopy point toward practically no interaction between the two drugs. The dissolution studies revealed the highest enhancement in dissolution profiles of cryomilled coamorphous mixtures containing GPZ:ATV in ratios 1:1 (B-5) and 2:1 (B-7). These two mixtures were, therefore, subjected to studies for the evaluation of precompression parameters in order to find their amenability to satisfactory compression into tablet dosage form. The selected formulation was found to be stable when subjected to accelerated stability testing at 40°. C/75% RH for six months as per ICH guidelines. Based on all these studies, it was concluded that GPZ:ATV (1:1) combination may be able to provide an effective therapy for the comorbidities of hyperglycemia and hyperlipidemia.

Thermal Transport in Graphene Oxide – From Ballistic Extreme to Amorphous Limit

PubMed Central

Mu, Xin; Wu, Xufei; Zhang, Teng; Go, David B.; Luo, Tengfei

2014-01-01

Graphene oxide is being used in energy, optical, electronic and sensor devices due to its unique properties. However, unlike its counterpart – graphene – the thermal transport properties of graphene oxide remain unknown. In this work, we use large-scale molecular dynamics simulations with reactive potentials to systematically study the role of oxygen adatoms on the thermal transport in graphene oxide. For pristine graphene, highly ballistic thermal transport is observed. As the oxygen coverage increases, the thermal conductivity is significantly reduced. An oxygen coverage of 5% can reduce the graphene thermal conductivity by ~90% and a coverage of 20% lower it to ~8.8 W/mK. This value is even lower than the calculated amorphous limit (~11.6 W/mK for graphene), which is usually regarded as the minimal possible thermal conductivity of a solid. Analyses show that the large reduction in thermal conductivity is due to the significantly enhanced phonon scattering induced by the oxygen defects which introduce dramatic structural deformations. These results provide important insight to the thermal transport physics in graphene oxide and offer valuable information for the design of graphene oxide-based materials and devices. PMID:24468660

Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

DOE PAGES

Herklotz, A.; Dörr, Kathrin; Ward, T. Z.; ...

2015-04-03

In this paper, to have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can bemore » utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr n +1Ti n O 3 n +1 Ruddlesden-Popper phases are grown with good long-range order. Finally, this method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.« less

Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

DOE PAGES

Herklotz, Andreas; Dorr, Kathrin; Ward, Thomas Zac; ...

2015-04-03

To have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determinemore » the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr n+1Ti nO 3 n+1 Ruddlesden-Popper phases are grown with good long-range order. Furthermore, this method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.« less

Practical performance and its efficiency of arsenic removal from groundwater using Fe-Mn binary oxide.

PubMed

Chang, Fangfang; Qu, Jiuhui; Liu, Ruiping; Zhao, Xu; Lei, Pengju

2010-01-01

A treatment unit packed by granular adsorbent of Fe-Mn binary oxide incorporated into diatomite (FMBO(1:1)-diatomite) was studied to remove arsenic from anaerobic groundwater without any pre-treatment or post-treatment. The raw anaerobic groundwater containing 35-45 microg/L of arsenic was collected from suburb of Beijing. Arsenic (III) constituted roughly 60%-80% of the total arsenic content. Approximately 7,000 bed volumes (ratio of effluent volume to adsorbent volume) treated water with arsenic concentration below 10 microg/L were produced in the operation period of four months. The regeneration of FMBO (1:1)-diatomite had been operated for 15 times. In the first stage, the regeneration process significantly improved the adsorption capacity of FMBO (1:1)-diatomite. With increased loading amount of Fe-Mn binary oxide, the adsorption capacity for arsenic decreased 20%-40%. Iron and manganese in anaerobic groundwater were oxidized and adsorptive filtrated by FMBO (1:1)-diatomite efficiently. The final concentrations of iron and manganese in effluents were nearly zero. The continued safe performance of the treatment units proved that adsorbent FMBO (1:1)-diatomite had high oxidation ability and exhibited strong adsorptive filtration.

Cohesive energy and structural parameters of binary oxides of groups IIA and IIIB from diffusion quantum Monte Carlo

DOE PAGES

Santana, Juan A.; Krogel, Jaron T.; Kent, Paul R. C.; ...

2016-05-03

We have applied the diffusion quantum Monte Carlo (DMC) method to calculate the cohesive energy and the structural parameters of the binary oxides CaO, SrO, BaO, Sc 2O 3, Y 2O 3 and La 2O 3. The aim of our calculations is to systematically quantify the accuracy of the DMC method to study this type of metal oxides. The DMC results were compared with local and semi-local Density Functional Theory (DFT) approximations as well as with experimental measurements. The DMC method yields cohesive energies for these oxides with a mean absolute deviation from experimental measurements of 0.18(2) eV, while withmore » local and semi-local DFT approximations the deviation is 3.06 and 0.94 eV, respectively. For lattice constants, the mean absolute deviation in DMC, local and semi-local DFT approximations, are 0.017(1), 0.07 and 0.05 , respectively. In conclusion, DMC is highly accurate method, outperforming the local and semi-local DFT approximations in describing the cohesive energies and structural parameters of these binary oxides.« less

Amorphous GeOx-Coated Reduced Graphene Oxide Balls with Sandwich Structure for Long-Life Lithium-Ion Batteries.

PubMed

Choi, Seung Ho; Jung, Kyeong Youl; Kang, Yun Chan

2015-07-01

Amorphous GeOx-coated reduced graphene oxide (rGO) balls with sandwich structure are prepared via a spray-pyrolysis process using polystyrene (PS) nanobeads as sacrificial templates. This sandwich structure is formed by uniformly coating the exterior and interior of few-layer rGO with amorphous GeOx layers. X-ray photoelectron spectroscopy analysis reveals a Ge:O stoichiometry ratio of 1:1.7. The amorphous GeOx-coated rGO balls with sandwich structure have low charge-transfer resistance and fast Li(+)-ion diffusion rate. For example, at a current density of 2 A g(-1), the GeOx-coated rGO balls with sandwich and filled structures and the commercial GeO2 powders exhibit initial charge capacities of 795, 651, and 634 mA h g(-1), respectively; the corresponding 700th-cycle charge capacities are 758, 579, and 361 mA h g(-1). In addition, at a current density of 5 A g(-1), the rGO balls with sandwich structure have a 1600th-cycle reversible charge capacity of 629 mA h g(-1) and a corresponding capacity retention of 90.7%, as measured from the maximum reversible capacity at the 100th cycle.

Poly(methyl methacrylate) coating of soft magnetic amorphous and crystalline Fe,Co-B nanoparticles by chemical reduction.

PubMed

Fernández Barquín, L; Yedra Martínez, A; Rodríguez Fernández, L; Rojas, D P; Murphy, F J; Alba Venero, D; Ruiz González, L; González-Calbet, J; Fdez-Gubieda, M L; Pankhurst, Q A

2012-03-01

The structural and magnetic properties of a collection of nanoparticles coated by Poly(methyl methacrylate) through a wet chemical synthesis have been investigated. The particles display either an amorphous (M = Fe, Co) M-B arrangement or a mixed structure bcc-Fe and fcc-Co + amorphous M-B. Both show the presence of a metal oxi-hydroxide formed in aqueous reduction. The organic coating facilitates technological handling. The cost-effective synthesis involves a reduction in a Poly(methyl methacrylate) aqueous solution of iron(II) or cobalt(II) sulphates (< 0.5 M) by sodium borohydride (< 0.5 M). The particles present an oxidized component, as deduced from X-ray diffraction, Mössbauer and Fe- and Co K-edge X-ray absorption spectroscopy and electron microscopy. For the ferrous alloys, this Fe-oxide is alpha-goethite, favoured by the aqueous solution. The Poly(methyl methacrylate) coating is confirmed by Fourier transform infrared spectroscopy. In pure amorphous core alloys there is a drastic change of the coercivity from bulk to around 30 Oe in the nanoparticles. The mixed structured alloys also lie in the soft magnetic regime. Magnetisation values at room temperature range around 100 emu/g. The coercivity stems from multidomain particles and their agglomeration, triggering the dipolar interactions.

On the Mass Fractal Character of Si-Based Structural Networks in Amorphous Polymer Derived Ceramics

PubMed Central

Sen, Sabyasachi; Widgeon, Scarlett

2015-01-01

The intermediate-range packing of SiNxC4−x (0 ≤ x ≤ 4) tetrahedra in polysilycarbodiimide and polysilazane-derived amorphous SiCN ceramics is investigated using 29Si spin-lattice relaxation nuclear magnetic resonance (SLR NMR) spectroscopy. The SiCN network in the polysilylcarbodiimide-derived ceramic consists predominantly of SiN4 tetrahedra that are characterized by a 3-dimensional spatial distribution signifying compact packing of such units to form amorphous Si3N4 clusters. On the other hand, the SiCN network of the polysilazane-derived ceramic is characterized by mixed bonded SiNxC4−x tetrahedra that are inefficiently packed with a mass fractal dimension of Df ~2.5 that is significantly lower than the embedding Euclidean dimension (D = 3). This result unequivocally confirms the hypothesis that the presence of dissimilar atoms, namely, 4-coordinated C and 3-coordinated N, in the nearest neighbor environment of Si along with some exclusion in connectivity between SiCxN4−x tetrahedra with widely different N:C ratios and the absence of bonding between C and N result in steric hindrance to an efficient packing of these structural units. It is noted that similar inefficiencies in packing are observed in polymer-derived amorphous SiOC ceramics as well as in proteins and binary hard sphere systems. PMID:28347016

Indium local geometry in In-Sb-Te thin films using XANES and DFT calculations

NASA Astrophysics Data System (ADS)

Bilovol, V.; Gil Rebaza, A. V.; Mudarra Navarro, A. M.; Errico, L.; Fontana, M.; Arcondo, B.

2017-12-01

In-Sb-Te when is a thin film presents a huge difference in its electrical resistivity when transform from the amorphous (insulating) to the crystalline (conducting) phase. This property made this system one of the main phase-change materials used in the data storage industry. The change in the electrical conductivity is probably associated to a change in the bonding geometry of some of its constituents. To explore this point, we present in this work an study of the bonding geometry of In atoms in In-Sb-Te films by means of In K-edge X-ray absorption near edge structure (XANES) spectroscopy using synchrotron radiation in both as deposited (amorphous) and crystalline thin films obtained as a result of resistance (R) vs temperature (T) measurements. Comparison of the XANES spectra obtained for ternary amorphous films and binary crystalline reference films suggests that in amorphous films the bonding geometry of In atoms is tetrahedral-like. After the thermal annealing has been carried out the differences in the XANES spectra of the as deposited and the annealed films indicate that the bonding geometry of In atoms changes. Based on X-ray diffraction results and ab initio calculations in the framework of the Density Functional Theory (DFT) we show that the new coordination geometry is associated with a tendency of In atoms towards octahedral-like.

Microstructure and Electrochemical Behavior of Fe-Based Amorphous Metallic Coatings Fabricated by Atmospheric Plasma Spraying

NASA Astrophysics Data System (ADS)

Zhou, Z.; Wang, L.; He, D. Y.; Wang, F. C.; Liu, Y. B.

2011-01-01

A Fe48Cr15Mo14C15B6Y2 alloy with high glass forming ability (GFA) was selected to prepare amorphous metallic coatings by atmospheric plasma spraying (APS). The as-deposited coatings present a dense layered structure and low porosity. Microstructural studies show that some nanocrystals and a fraction of yttrium oxides formed during spraying, which induced the amorphous fraction of the coatings decreasing to 69% compared with amorphous alloy ribbons of the same component. High thermal stability enables the amorphous coatings to work below 910 K without crystallization. The results of electrochemical measurement show that the coatings exhibit extremely wide passive region and relatively low passive current density in 3.5% NaCl and 1 mol/L HCl solutions, which illustrate their superior ability to resist localized corrosion. Moreover, the corrosion behavior of the amorphous coatings in 1 mol/L H2SO4 solution is similar to their performance under conditions containing chloride ions, which manifests their flexible and extensive ability to withstand aggressive environments.

Effect of hot water and heat treatment on the apatite-forming ability of titania films formed on titanium metal via anodic oxidation in acetic acid solutions.

PubMed

Cui, Xinyu; Kim, Hyun-Min; Kawashita, Masakazu; Wang, Longbao; Xiong, Tianying; Kokubo, Tadashi; Nakamura, Takashi

2008-04-01

Titanium and its alloys have been widely used for orthopedic implants because of their good biocompatibility. We have previously shown that the crystalline titania layers formed on the surface of titanium metal via anodic oxidation can induce apatite formation in simulated body fluid, whereas amorphous titania layers do not possess apatite-forming ability. In this study, hot water and heat treatments were applied to transform the titania layers from an amorphous structure into a crystalline structure after titanium metal had been anodized in acetic acid solution. The apatite-forming ability of titania layers subjected to the above treatments in simulated body fluid was investigated. The XRD and SEM results indicated hot water and/or heat treatment could greatly transform the crystal structure of titania layers from an amorphous structure into anatase, or a mixture of anatase and rutile. The abundance of Ti-OH groups formed by hot water treatment could contribute to apatite formation on the surface of titanium metals, and subsequent heat treatment would enhance the bond strength between the apatite layers and the titanium substrates. Thus, bioactive titanium metals could be prepared via anodic oxidation and subsequent hot water and heat treatment that would be suitable for applications under load-bearing conditions.

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

PubMed

Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

2018-03-07

Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

Preparation of iron oxide-impregnated spherical granular activated carbon-carbon composite and its photocatalytic removal of methylene blue in the presence of oxalic acid.

PubMed

Kadirova, Zukhra C; Hojamberdiev, Mirabbos; Katsumata, Ken-Ichi; Isobe, Toshihiro; Matsushita, Nobuhiro; Nakajima, Akira; Sharipov, Khasan; Okada, Kiyoshi

2014-01-01

The spherical granular activated carbon-carbon composites (GAC-Fe) with different iron oxide contents (Fe mass% = 0.6-10) were prepared by a pore volume impregnation method. The X-ray diffraction (XRD), scanning electron microscopy (SEM), and N2-adsorption results confirm the presence of amorphous iron oxide, pyrolytic carbon, and graphitized globular carbon nanoparticles covered with amorphous carbon in the CAG-Fe. The rate of photodegradation of methylene blue (MB) in aqueous solution under UV light in the presence of oxalic acid correlates with porosity of the prepared materials. The total MB removal includes the combination of adsorption and photodegradation without the addition of H2O2. The results of total organic carbon (TOC) analysis reveal that the decolorization of MB in aqueous solution containing oxalic acid corresponds to the decomposition of organic compounds to CO2 and H2O.

Synthesis, thermal stability and the effects of ion irradiation in amorphous Si-O-C alloys

NASA Astrophysics Data System (ADS)

Colón Santana, Juan A.; Mora, Elena Echeverría; Price, Lloyd; Balerio, Robert; Shao, Lin; Nastasi, Michael

2015-05-01

Amorphous films of Si-O-C alloys were synthesized via sputtering deposition at room temperature. These alloys were characterized using grazing incidence diffraction, both as a function of temperature and irradiation dose. It was found that the material retained its amorphous structure, both at high temperatures (up to 1200 °C) and ion irradiation doses up to 1.0 dpa. The depth profile from photoemission spectroscopy provided evidence of the oxidation state of these alloys and their atomic composition. The studies suggest that Si-O-C alloys might belong to a group of radiation tolerant materials suitable for applications in reactor-like harsh environments.

Composition-controlled active-passive transition and corrosion behavior of Fe-Cr(Mo)-Zr-B bulk amorphous steels

NASA Astrophysics Data System (ADS)

Si, Jiajia; Wu, Yidong; Wang, Tan; Liu, Yanhui; Hui, Xidong

2018-07-01

Various corrosive environments in daily life and industry have put forward high requirement on corrosion resistance of metals, especially steels. Unlike the strict demand in Cr content of crystalline stainless steels, amorphous steels (ASs) with lower Cr content can be endowed with outstanding corrosion resistance, while the intrinsic mechanism is not fully understood. Herein, we present a novel Fe92-x-y-zCrxMoyZr8Bz (6 ≤ x ≤ 40, 0 ≤ y ≤ 22, and 12 ≤ z ≤ 18) bulk amorphous steel (BAS) forming system and reveal the synergistic effect of Cr and Mo in determining the chemical stability of oxide films. It has been found the Fe92-x-zCrxZr8Bz BASs with 1 mm in diameter display a Cr-controlling active-passive transition at the Cr threshold of ∼25% in 1 M hydrochloric acid. When adding minor Mo into the BASs, the Cr threshold can be remarkably reduced by forming favorable hexavalent Mo oxides. The generation of Mo6+ is facilitated by atomic selective dissolution at the interface and can promote the passivation. In contrast, when the Cr content of the Mo-doped glasses exceeds 25%, few Mo6+ oxides would produce as the prior formation of protective passive films inhibits the further oxidation of Mo. Therefore, manipulating the active-passive transition properly is crucial to designing ASs with high stainlessness.

Photocatalytic activity of binary metal oxide nanocomposites of CeO2/CdO nanospheres: Investigation of optical and antimicrobial activity.

PubMed

Magdalane, C Maria; Kaviyarasu, K; Vijaya, J Judith; Siddhardha, Busi; Jeyaraj, B

2016-10-01

We report the synthesis of high quality CeO2-CdO binary metal oxide nanocomposites were synthesized by a simple chemical precipitation and hydrothermal method. Cerium nitrate and cadmium nitrate were used as precursors. Composition, structure and morphology of the nanocomposites were analyzed by X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). XRD pattern proves that the final product has cubic phase and the particle size diameter of the nanocomposites are 27nm, XRD results also indicated that the crystalline properties of the nanocomposite were improved without affecting the parent lattice, FESEM analysis indicates that the product is composed of spherical particles in clusters. The morphological and optical properties of CeO2-CdO nanosamples were characterized by HRTEM and DRS spectroscopy. The IR results showed high purity of products and indicated that the nanocomposites are made up of CeO2 and CdO bonds. Absorption spectra exhibited an upward shift in characteristic peaks caused by the addition of transition metal oxide, suggesting that crystallinity of both the metal oxide is improved due to specific doping level. TGA plots further confirmed the purity and stability of nanomaterials prepared. Hence the nanocomposite has cubic crystal lattice and form a homogeneous solid structure. From the result, Cd(2+) ions are embedded in the cubic crystal lattice of ceria. The growth rate increases which are ascribed to the cationic doping with a lower valence cation. Ce-Cd binary metal oxide nanocomposites showed antibacterial activity, it showed the better growth inhibition towards p.aeruginosa. Exploit of photodegradation and photocatalytic activity of large scale synthesis of CeO2-CdO binary metal oxide nanocomposites was reported. Copyright © 2016 Elsevier B.V. All rights reserved.

Synergistic effect of sunlight induced photothermal conversion and H2O2 release based on hybridized tungsten oxide gel for cancer inhibition

NASA Astrophysics Data System (ADS)

Wang, Cong; Gao, Yibo; Gao, Xinghua; Wang, Hua; Tian, Jingxuan; Wang, Li; Zhou, Bingpu; Ye, Ziran; Wan, Jun; Wen, Weijia

2016-10-01

A highly efficient photochromic hydrogel was successfully fabricated via casting precursor, which is based on amorphous tungsten oxide and poly (ethylene oxide)-block-poly (propylene oxide)-block-poly (ethylene oxide). Under simulated solar illumination, the hydrogel has a rapid and controlled temperature increasing ratio as its coloration degree. Localized electrons in the amorphous tungsten oxide play a vital role in absorption over a broad range of wavelengths from 400 nm to 1100 nm, encompassing the entire visible light and infrared regions in the solar spectrum. More importantly, the material exhibits sustainable released H2O2 induced by localized electrons, which has a synergistic effect with the rapid surface temperature increase. The amount of H2O2 released by each film can be tuned by the light irradiation, and the film coloration can indicate the degree of oxidative stress. The ability of the H2O2-releasing gels in vitro study was investigated to induce apoptosis in melanoma tumor cells and NIH 3T3 fibroblasts. The in vivo experimental results indicate that these gels have a greater healing effect than the control in the early stages of tumor formation.

Synergistic effect of sunlight induced photothermal conversion and H2O2 release based on hybridized tungsten oxide gel for cancer inhibition

PubMed Central

Wang, Cong; Gao, Yibo; Gao, Xinghua; Wang, Hua; Tian, Jingxuan; Wang, Li; Zhou, Bingpu; Ye, Ziran; Wan, Jun; Wen, Weijia

2016-01-01

A highly efficient photochromic hydrogel was successfully fabricated via casting precursor, which is based on amorphous tungsten oxide and poly (ethylene oxide)-block-poly (propylene oxide)-block-poly (ethylene oxide). Under simulated solar illumination, the hydrogel has a rapid and controlled temperature increasing ratio as its coloration degree. Localized electrons in the amorphous tungsten oxide play a vital role in absorption over a broad range of wavelengths from 400 nm to 1100 nm, encompassing the entire visible light and infrared regions in the solar spectrum. More importantly, the material exhibits sustainable released H2O2 induced by localized electrons, which has a synergistic effect with the rapid surface temperature increase. The amount of H2O2 released by each film can be tuned by the light irradiation, and the film coloration can indicate the degree of oxidative stress. The ability of the H2O2-releasing gels in vitro study was investigated to induce apoptosis in melanoma tumor cells and NIH 3T3 fibroblasts. The in vivo experimental results indicate that these gels have a greater healing effect than the control in the early stages of tumor formation. PMID:27775086

Synthesis of crystalline and amorphous, particle-agglomerated 3-D nanostructures of Al and Si oxides by femtosecond laser and the prediction of these particle sizes

NASA Astrophysics Data System (ADS)

Sivayoganathan, Mugunthan; Tan, Bo; Venkatakrishnan, Krishnan

2012-11-01

We report a single step technique of synthesizing particle-agglomerated, amorphous 3-D nanostructures of Al and Si oxides on powder-fused aluminosilicate ceramic plates and a simple novel method of wafer-foil ablation to fabricate crystalline nanostructures of Al and Si oxides at ambient conditions. We also propose a particle size prediction mechanism to regulate the size of vapor-condensed agglomerated nanoparticles in these structures. Size characterization studies performed on the agglomerated nanoparticles of fabricated 3-D structures showed that the size distributions vary with the fluence-to-threshold ratio. The variation in laser parameters leads to varying plume temperature, pressure, amount of supersaturation, nucleation rate, and the growth rate of particles in the plume. The novel wafer-foil ablation technique could promote the possibilities of fabricating oxide nanostructures with varying Al/Si ratio, and the crystallinity of these structures enhances possible applications. The fabricated nanostructures of Al and Si oxides could have great potentials to be used in the fabrication of low power-consuming complementary metal-oxide-semiconductor circuits and in Mn catalysts to enhance the efficiency of oxidation on ethylbenzene to acetophenone in the super-critical carbon dioxide.

Synthesis of crystalline and amorphous, particle-agglomerated 3-D nanostructures of Al and Si oxides by femtosecond laser and the prediction of these particle sizes.

PubMed

Sivayoganathan, Mugunthan; Tan, Bo; Venkatakrishnan, Krishnan

2012-11-09

We report a single step technique of synthesizing particle-agglomerated, amorphous 3-D nanostructures of Al and Si oxides on powder-fused aluminosilicate ceramic plates and a simple novel method of wafer-foil ablation to fabricate crystalline nanostructures of Al and Si oxides at ambient conditions. We also propose a particle size prediction mechanism to regulate the size of vapor-condensed agglomerated nanoparticles in these structures. Size characterization studies performed on the agglomerated nanoparticles of fabricated 3-D structures showed that the size distributions vary with the fluence-to-threshold ratio. The variation in laser parameters leads to varying plume temperature, pressure, amount of supersaturation, nucleation rate, and the growth rate of particles in the plume. The novel wafer-foil ablation technique could promote the possibilities of fabricating oxide nanostructures with varying Al/Si ratio, and the crystallinity of these structures enhances possible applications. The fabricated nanostructures of Al and Si oxides could have great potentials to be used in the fabrication of low power-consuming complementary metal-oxide-semiconductor circuits and in Mn catalysts to enhance the efficiency of oxidation on ethylbenzene to acetophenone in the super-critical carbon dioxide.

Synthesis of crystalline and amorphous, particle-agglomerated 3-D nanostructures of Al and Si oxides by femtosecond laser and the prediction of these particle sizes

PubMed Central

2012-01-01

We report a single step technique of synthesizing particle-agglomerated, amorphous 3-D nanostructures of Al and Si oxides on powder-fused aluminosilicate ceramic plates and a simple novel method of wafer-foil ablation to fabricate crystalline nanostructures of Al and Si oxides at ambient conditions. We also propose a particle size prediction mechanism to regulate the size of vapor-condensed agglomerated nanoparticles in these structures. Size characterization studies performed on the agglomerated nanoparticles of fabricated 3-D structures showed that the size distributions vary with the fluence-to-threshold ratio. The variation in laser parameters leads to varying plume temperature, pressure, amount of supersaturation, nucleation rate, and the growth rate of particles in the plume. The novel wafer-foil ablation technique could promote the possibilities of fabricating oxide nanostructures with varying Al/Si ratio, and the crystallinity of these structures enhances possible applications. The fabricated nanostructures of Al and Si oxides could have great potentials to be used in the fabrication of low power-consuming complementary metal-oxide-semiconductor circuits and in Mn catalysts to enhance the efficiency of oxidation on ethylbenzene to acetophenone in the super-critical carbon dioxide. PMID:23140103

Distribution and variability of redox zones controlling spatial variability of arsenic in the Mississippi River Valley alluvial aquifer, southeastern Arkansas

USGS Publications Warehouse

Sharif, M.U.; Davis, R.K.; Steele, K.F.; Kim, B.; Hays, P.D.; Kresse, T.M.; Fazio, J.A.

2008-01-01

Twenty one of 118 irrigation water wells in the shallow (25-30??m thick) Mississippi River Valley alluvial aquifer in the Bayou Bartholomew watershed, southeastern Arkansas had arsenic (As) concentrations (< 0.5 to 77????g/L) exceeding 10????g/L. Sediment and groundwater samples were collected and analyzed from the sites of the highest, median, and lowest concentrations of As in groundwater in the alluvial aquifers located at Jefferson County, Arkansas. A traditional five-step sequential extraction was performed to differentiate the exchangeable, carbonate, amorphous Fe and Mn oxide, organic, and hot HNO3-leachable fraction of As and other compounds in sediments. The Chao reagent (0.25??M hydroxylamine hydrochloride in 0.25??M HCl) removes amorphous Fe and Mn oxides and oxyhydroxides (present as coatings on grains and amorphous minerals) by reductive dissolution and is a measure of reducible Fe and Mn in sediments. The hot HNO3 extraction removes mostly crystalline metal oxides and all other labile forms of As. Significant total As (20%) is complexed with amorphous Fe and Mn oxides in sediments. Arsenic abundance is not significant in carbonates or organic matter. Significant (40-70????g/kg) exchangeable As is only present at shallow depth (0-1??m below ground surface). Arsenic is positively correlated to Fe extracted by Chao reagent (r = 0.83) and hot HNO3 (r = 0.85). Arsenic extracted by Chao reagent decreases significantly with depth as compared to As extracted by hot HNO3. Fe (II)/Fe (the ratio of Fe concentration in the extracts of Chao reagent and hot HNO3) is positively correlated (r = 0.76) to As extracted from Chao reagent. Although Fe (II)/Fe increases with depth, the relative abundance of reducible Fe decreases noticeably with depth. The amount of reducible Fe, as well as As complexed to amorphous Fe and Mn oxides and oxyhydroxides decreases with depth. Possible explanations for the decrease in reducible Fe and its complexed As with depth include historic flushing of As and Fe from hydrous ferric oxides (HFO) by microbially-mediated reductive dissolution and aging of HFO to crystalline phases. Hydrogeochemical data suggests that the groundwater in the area falls in the mildly reducing (suboxic) to relatively highly reducing (anoxic) zone, and points to reductive dissolution of HFO as the dominant As release mechanism. Spatial variability of gypsum solubility and simultaneous SO42- reduction with co-precipitation of As and sulfide is an important limiting process controlling the concentration of As in groundwater in the area. ?? 2008 Elsevier B.V. All rights reserved.

Development and Application of Binary Suspensions in the Ternary System Cr2O3-TiO2-Al2O3 for S-HVOF Spraying

NASA Astrophysics Data System (ADS)

Potthoff, Annegret; Kratzsch, Robert; Barbosa, Maria; Kulissa, Nick; Kunze, Oliver; Toma, Filofteia-Laura

2018-04-01

Compositions in the system Cr2O3-TiO2-Al2O3 are among the most used ceramic materials for thermally sprayed coating solutions. Cr2O3 coatings present good sliding wear resistance; Al2O3 coatings show excellent insulation behavior and TiO2 striking corrosion properties. In order to combine these properties, coatings containing more than one oxide are highly interesting. The conventional spraying process is limited to the availability of binary feedstock powders with defined compositions. The use of suspensions offers the opportunity for tailor-made chemical compositions: within the triangle of Cr2O3-TiO2-Al2O3, each mixture of oxides can be created. Criteria for the selection of raw materials as well as the relevant aspects for the development of binary suspensions in the Cr2O3-TiO2-Al2O3 system to be used as feedstock for thermal spraying are presented. This formulation of binary suspensions required the development of water-based single-oxide suspensions with suitable behavior; otherwise, the interaction between the particles while mixing could lead up to a formation of agglomerates, which affect both the stability of the spray process and the coating properties. For the validation of this formulation procedure, binary Cr2O3-TiO2 and Al2O3-TiO2 suspensions were developed and sprayed using the S-HVOF process. The binary coatings were characterized and discussed in terms of microstructure and microhardness.

Arsenate Adsorption On Ruthenium Oxides: A Spectroscopic And Kinetic Investigation

EPA Science Inventory

Arsenate adsorption on amorphous (RuO₂•1.1H₂O) and crystalline (RuO₂) ruthenium oxides was evaluated using spectroscopic and kinetic methods to elucidate the adsorption mechanism. Extended X-ray absorption fine structure spectroscopy (EXAFS) was ...

Modeling selenite adsorption envelopes on oxides, clay minerals, and soils using the triple layer model

USDA-ARS?s Scientific Manuscript database

Selenite adsorption behavior was investigated on amorphous aluminum and iron oxides, clay minerals: kaolinite, montmorillonite, and illite, and 45 surface and subsurface soil samples from the Southwestern and Midwestern regions of the USA as a function of solution pH. Selenite adsorption decreased ...

Molybdenum Carbamate Nanosheets as a New Class of Potential Phase Change Materials.

PubMed

Zhukovskyi, Maksym; Plashnitsa, Vladimir; Petchsang, Nattasamon; Ruth, Anthony; Bajpai, Anshumaan; Vietmeyer, Felix; Wang, Yuanxing; Brennan, Michael; Pang, Yunsong; Werellapatha, Kalpani; Bunker, Bruce; Chattopadhyay, Soma; Luo, Tengfei; Janko, Boldizsar; Fay, Patrick; Kuno, Masaru

2017-06-14

We report for the first time the synthesis of large, free-standing, Mo 2 O 2 (μ-S) 2 (Et 2 dtc) 2 (MoDTC) nanosheets (NSs), which exhibit an electron-beam induced crystalline-to-amorphous phase transition. Both electron beam ionization and femtosecond (fs) optical excitation induce the phase transition, which is size-, morphology-, and composition-preserving. Resulting NSs are the largest, free-standing regularly shaped two-dimensional amorphous nanostructures made to date. More importantly, amorphization is accompanied by dramatic changes to the NS electrical and optical response wherein resulting amorphous species exhibit room-temperature conductivities 5 orders of magnitude larger than those of their crystalline counterparts. This enhancement likely stems from the amorphization-induced formation of sulfur vacancy-related defects and is supported by temperature-dependent transport measurements, which reveal efficient variable range hopping. MoDTC NSs represent one instance of a broader class of transition metal carbamates likely having applications because of their intriguing electrical properties as well as demonstrated ability to toggle metal oxidation states.

Hot gas, regenerative, supported H.sub.2 S sorbents

NASA Technical Reports Server (NTRS)

Voecks, Gerald E. (Inventor); Sharma, Pramod K. (Inventor)

1993-01-01

Efficient, regenerable sorbents for removal of H.sub.2 S from moderately high temperature (usually 200.degree. C.-550.degree.C.) gas streams comprise a porous, high surface area aluminosilicate support, suitably a zeolite, and most preferably a sodium deficient zeolite containing 1 to 20 weight percent of binary metal oxides. The binary oxides are a mixture of a Group VB or VIB metal oxide with a Group IB, IIB or VIII metal oxide such as V-Zn-O, V-Cu-O, Cu-Mo-O, Zn-Mo-O or Fe-Mo-O contained in the support. The sorbent effectively removes H.sub.2 S from the host gas stream in high efficiency and can be repetitively regenerated at least 10 times without loss of activity.

Pattern formation in binary colloidal assemblies: hidden symmetries in a kaleidoscope of structures.

PubMed

Lotito, Valeria; Zambelli, Tomaso

2018-06-10

In this study we present a detailed investigation of the morphology of binary colloidal structures formed by self-assembly at air/water interface of particles of two different sizes, with a size ratio such that the larger particles do not retain a hexagonal arrangement in the binary assembly. While the structure and symmetry of binary mixtures in which such hexagonal order is preserved has been thoroughly scrutinized, binary colloids in the regime of non-preservation of the hexagonal order have not been examined with the same level of detail due also to the difficulty in finding analysis tools suitable to recognize hidden symmetries in seemingly amorphous and disordered arrangements. For this purpose, we resorted to a combination of different analysis tools based on computational geometry and computational topology in order to get a comprehensive picture of the morphology of the assemblies. By carrying out an extensive investigation of binary assemblies in this regime with variable concentration of smaller particles with respect to larger particles, we identify the main patterns that coexist in the apparently disordered assemblies and detect transitions in the symmetries upon increase in the number of small particles. As the concentration of small particles increases, large particle arrangements become more dilute and a transition from hexagonal to rhombic and square symmetries occurs, accompanied also by an increase in clusters of small particles; the relative weight of each specific symmetry can be controlled by varying the composition of the assemblies. The demonstration of the possibility to control the morphology of apparently disordered binary colloidal assemblies by varying experimental conditions and the definition of a route for the investigation of disordered assemblies are precious for future studies of complex colloidal patterns to understand self-assembly mechanisms and to tailor physical properties of colloidal assemblies.

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

DOE PAGES

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; ...

2014-11-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more » between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

Magnetic properties and crystallization kinetics of (Fe 100–xNi x) 80Nb 4Si 2B 14 metal amorphous nanocomposites

DOE PAGES

Aronhime, Natan; Zoghlin, Eli; Keylin, Vladimir; ...

2017-09-26

Fe-Ni based metal amorphous nanocomposites (MANCs) are investigated in the pseudo-binary alloys (Fe 100–xNi x) 80Nb 4Si 2B 14. To optimize the soft magnetic properties of the nanocomposites, primary and secondary crystallization kinetics must be understood. As such, primary and secondary crystallization temperatures are determined by differential scanning calorimetry, and activation energies are calculated, along with the resulting crystalline phases. Time-temperature-transformation diagrams for primary and secondary crystallization in (Fe 70Ni 30) 80Nb 4Si 2B 14 are presented. Saturation magnetization and Curie temperature are determined. In conclusion, the shape of magnetization vs. time curves for (Fe 30Ni 70) 80Nb 4Si 2Bmore » 14 at various temperatures suggest that the secondary crystal product often consumes some of the primary crystalline product.« less

Correlation between nano-scale microstructural behavior and the performance of ZnO thin-film transistors.

PubMed

Ahn, Cheol Hyoun; Lee, Ju Ho; Lee, Jeong Yong; Cho, Hyung Koun

2014-12-01

Binary ZnO active layers possessing a polycrystalline structure were deposited with various argon/oxygen flow ratios at 250 degrees C via sputtering. Then ZnO thin-film-transistors (TFTs) were fabricated without additional thermal treatments. As the oxygen content increased during the deposition, the preferred orientation along the (0002) was weakened and the rotation of the grains increased, and furthermore, less conducting films were observed. On the other hand, the reduced oxygen flow rate induced the formation of amorphous-like transition layers during the initial growth due to a high growth rate and high energetic bombardment of the adatoms. As a result, the amorphous phases at the gate dielectric/channel interface were responsible for the formation of a hump shape in the subthreshold region of the TFT transfer curve. In addition, the relationship between the crystal properties and the shift in the threshold voltage was experimentally confirmed by a hysteresis test.

R&D issues in scale-up and manufacturing of amorphous silicon tandem modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arya, R.R.; Carlson, D.E.; Chen, L.F.

1999-03-01

R & D on amorphous silicon based tandem junction devices has improved the throughtput, the material utilization, and the performance of devices on commercial tin oxide coated glass. The tandem junction technology has been scaled-up to produce 8.6&hthinsp;Ft{sup 2} monolithically integrated modules in manufacturing at the TF1 plant. Optimization of performance and stability of these modules is ongoing. {copyright} {ital 1999 American Institute of Physics.}

Synthesis and characterization of porous metal oxides and desulfurization studies of sulfur containing compounds

NASA Astrophysics Data System (ADS)

Garces Trujillo, Hector Fabian

This thesis contains two parts: 1) synthesis and characterization of porous metal oxides that include zinc oxide and a porous mixed-valent manganese oxide with an amorphous structure (AMO) 2) the desulfurization studies for the removal of sulfur compounds. Zinc oxide with different nano-scale morphologies may result in various porosities with different adsorption capabilities. A tunable shape microwave synthesis of ZnO nano-spheres in a co-solvent mixture is presented. The ZnO nano-sphere material is investigated as a desulfurizing sorbent in a fixed bed reactor in the temperature range 200 to 400 °C and compared with ZnO nanorods and platelet-like morphologies. Fresh and sulfided materials were characterized by X-ray diffraction (XRD), BET specific surface area, pore volume, scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (SEM/EDX), Raman spectroscopy, and thermogravimetric analysis (TGA). The tunable shape microwave synthesis of ZnO presents a high sulfur sorption capacity at temperatures as low as 200 °C which accounts for a three and four fold enhancement over the other preparations presented in this work, and reached 76 % of the theoretical sulfur capacity (TSC) at 300 °C. Another ZnO material with a bimodal micro- and mesopore size distribution investigated as a desulfurizing sorbent presents a sorption capacity that reaches 87% of the theoretical value for desulfurization at 400 °C at breakthrough time. A deactivation model that considers the activity of the solid reactant was used to fit the experimental data. Good agreement between the experimental breakthrough curves and the model predictions are obtained. Manganese oxides are a type of metal oxide materials commonly used in catalytic applications. Little is known about the adsorption capabilities for the removal of sulfur compounds. One of these manganese oxides; amorphous manganese oxide (AMO) is highly promising material for low temperature sorption processes. Amorphous manganese oxide (AMO) has been used in catalytic processes such as for the catalytic oxidation of benzyl alcohol, the preferential oxidation of CO, and for the capture of formate species. This chapter explores the possibility of using AMO in sorption processes for the removal of two contaminants; H 2S and COS in the temperature range 200 - 400 °C.

A simple transferable adaptive potential to study phase separation in large-scale xMgO-(1-x)SiO2 binary glasses.

PubMed

Bidault, Xavier; Chaussedent, Stéphane; Blanc, Wilfried

2015-10-21

A simple transferable adaptive model is developed and it allows for the first time to simulate by molecular dynamics the separation of large phases in the MgO-SiO2 binary system, as experimentally observed and as predicted by the phase diagram, meaning that separated phases have various compositions. This is a real improvement over fixed-charge models, which are often limited to an interpretation involving the formation of pure clusters, or involving the modified random network model. Our adaptive model, efficient to reproduce known crystalline and glassy structures, allows us to track the formation of large amorphous Mg-rich Si-poor nanoparticles in an Mg-poor Si-rich matrix from a 0.1MgO-0.9SiO2 melt.

Atomic-Scale Tuning of Layered Binary Metal Oxides for High Temperature Moving Assemblies

DTIC Science & Technology

2015-06-01

AFRL-OSR-VA-TR-2015-0166 Atomic-Scale Tuning of Layered Binary Metal OxideS ASHLIE MARTINI UNIVERSITY OF CALIFORNIA MERCED Final Report 06/01/2015...Assemblies 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-12-1-0221 5c.  PROGRAM ELEMENT NUMBER 6.  AUTHOR(S) ASHLIE MARTINI 5d.  PROJECT NUMBER 5e...ABSTRACT UU 18.  NUMBER        OF        PAGES 19a.  NAME OF RESPONSIBLE PERSON ASHLIE MARTINI Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18

Pairing Heterocyclic Cations with closo-Icosahedral Borane and Carborane Anions, II: Benchtop Alternative Synthetic Methodologies for Binary Triazolium and Tetrazolium Salts with Significant Water Solubility (POSTPRINT)

DTIC Science & Technology

2012-01-01

interesting property, eutectic melting-point depression. Recrystallization of ternary salts 12–14 was not attempted because of a concern that a cation... recrystallization solvent mixture for these powders, and while some individual successes resulted, a general efficient solvent system for all salt...product recrystallizations could not be found. So, rather than recrystallizing each individual adduct, spectroscopic examination of the amorphous solids was

Prediction of Formation of Amorphous Alloys During Annealing of Ti-binary Alloys and Validation of the Same

DTIC Science & Technology

2009-11-22

The authors argued that the occurrence of the reversible step in the specific heat reflected “the freezing and unfreezing of some degree of freedom...of steel, the austenite phase is sometimes formed in a composition range where ferrite and liquid are the equilibrium phases. The formation of the...austenite is explained by the construction of a meta-stable extension of the (austenite+liquid) field into the ( ferrite +liquid) region. The

Cobalt-Free Permanent Magnet Alloys.

DTIC Science & Technology

1984-10-01

carbide co- UC CbC lumbium carbide M003 Uranium carbide - tho- UC 2 25ThC rium carbide ZrO2 MgO WOs Use of this Process for MnAlC As indicated in the...cobalt. Free World Cobal Consumption Estimated Breakdown by End Uses Magnetic alloys 20% Cemented carbides - 5% 30 SuPerolloy _ 15% Other steels and...would normally result in the formation of binary alloy of TbFe 2 and preventing the formation of amorphous alloy (Fe-B) contain- ing Tb. The

Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor

NASA Astrophysics Data System (ADS)

Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Sun, Min-Chul; Kim, Garam; Kim, Hyun Woo; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook

2010-11-01

A comprehensive study is done regarding stabilities under simultaneous stress of light and dc-bias in amorphous hafnium-indium-zinc-oxide thin film transistors. The positive threshold voltage (Vth) shift is observed after negative gate bias and light stress, and it is completely different from widely accepted phenomenon which explains that negative-bias stress results in Vth shift in the left direction by bias-induced hole-trapping. Gate current measurement is performed to explain the unusual positive Vth shift under simultaneous application of light and negative gate bias. As a result, it is clearly found that the positive Vth shift is derived from electron injection from gate electrode to gate insulator.

Silicon heterojunction solar cell with passivated hole selective MoOx contact

NASA Astrophysics Data System (ADS)

Battaglia, Corsin; de Nicolás, Silvia Martín; De Wolf, Stefaan; Yin, Xingtian; Zheng, Maxwell; Ballif, Christophe; Javey, Ali

2014-03-01

We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Temperature-Dependent Evolution of the Oxidation States of Cobalt and Platinum in Co 1–xPt x Clusters under H 2 and CO + H 2 Atmospheres

DOE PAGES

Yang, Bing; Khadra, Ghassan; Tuaillon-Combes, Juliette; ...

2016-08-25

In this study, Co 1–xPt x clusters of 2.9-nm size with a range of atomically precise Pt/Co atomic ratios (x = 0, 0.25, 0.5, 0.75, 1) were synthesized using the mass-selected low-energy cluster beam deposition (LECBD) technique and soft-landed onto an amorphous alumina thin film prepared by atomic layer deposition (ALD). Utilizing ex situ X-ray photoemission spectroscopy (XPS), the oxidation state of the as-made clusters supported on Al 2O 3 was determined after both a 1-h-long exposure to air and aging for several weeks while exposed to air. Next, the aged cluster samples were characterized by grazing-incidence X-ray absorption spectroscopymore » (GIXAS) and then pretreated with diluted hydrogen and further exposed to the mixture of diluted CO and H 2 up to 225°C at atmospheric pressure, and the temperature-dependent evolutions of the particle size/shape and the oxidation states of the individual metal components within the clusters were monitored using in situ grazing-incidence small-angle X-ray scattering and X-ray absorption spectroscopy (GISAXS/GIXAS). The changes in the oxidation states of Co and Pt exhibited a nonlinear dependence on the Pt/Co atomic ratio of the clusters. For example, a low Pt/Co ratio (x ≤ 0.5) facilitates the formation of Co(OH) 2, whereas a high Pt/Co ratio (x = 0.75) stabilizes the Co 3O 4 composition instead through the formation of a Co–Pt core–shell structure where the platinum shell inhibits the reduction of cobalt in the core of the Co 1–xPt x alloy clusters. Finally, the obtained results indicate methods for optimizing the composition and structure of binary alloy clusters for catalysis.« less

Temperature-Dependent Evolution of the Oxidation States of Cobalt and Platinum in Co 1–x Pt x Clusters under H 2 and CO + H 2 Atmospheres

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Bing; Khadra, Ghassan; Tuaillon-Combes, Juliette

2016-09-29

Co1-xPtx clusters of 2.9-nm size with a range of atomically precise Pt/Co atomic ratios (x = 0, 0.25, 0.5, 0.75, 1) were synthesized using the mass-selected low-energy cluster beam deposition (LECBD) technique and soft-landed onto an amorphous alumina thin film prepared by atomic layer deposition (ALD). Utilizing ex situ X-ray photoemission spectroscopy (XPS), the oxidation state of the as-made clusters supported on Al2O3 was determined after both a 1-h-long exposure to air and aging for several weeks while exposed to air. Next, the aged duster samples were characterized by grazing-incidence X-ray absorption spectroscopy (GIXAS) and then pretreated with diluted hydrogenmore » and further exposed to the mixture of diluted CO and H-2 up to 225 degrees C at atmospheric pressure, and the temperature-dependent evolutions of the particle size/shape and the oxidation states of the individual metal components within the dusters were monitored using in situ grazing-incidence small-angle X-ray scattering and X-ray absorption spectroscopy (GISAXS/GIXAS). The changes in the oxidation states of Co and Pt exhibited a nonlinear dependence on the Pt/Co atomic ratio of the dusters. For example, a low Pt/Co ratio (x <= 0.5) facilitates the formation of Co(OH)(2), whereas a high Pt/Co ratio (x = 0.75) stabilizes the Co3O4 composition instead through the formation of a Co-Pt core-shell structure where the platinum shell inhibits the reduction of cobalt in the core of the Co1-xPtx alloy dusters. The obtained results indicate methods for optimizing the composition and structure of binary alloy clusters for catalysis.« less

Amorphous Ni(OH)2/CQDs microspheres for highly sensitive non-enzymatic glucose detection prepared via CQDs induced aggregation process

NASA Astrophysics Data System (ADS)

Zhu, Jiajie; Yin, Haoyong; Cui, Zhenzhen; Qin, Dongyu; Gong, Jianying; Nie, Qiulin

2017-10-01

Non-enzymatic electrochemical sensors for the detection of glucose were designed based on amorphous Ni(OH)2/CQDs microspheres. The amorphous Ni(OH)2/CQDs microspheres were prepared by a CQDs assistant crystallization inhibition process. The morphologies and composition of the microspheres were characterized by SEM, TEM, XRD, EDS, and TG/DSC. The results showed that the microspheres had uniform heterogeneous phases with amorphous Ni(OH)2 and CQDs. The sensor based on amorphous Ni(OH)2/CQDs microspheres showed remarkable electrocatalytic activity towards glucose oxidation comparing to the conventional crystalline Ni(OH)2, which included two linear range (20 μM-350 μM and 0.45mM-2.5 mM) with high selectivity of 2760.05 and 1853.64 μA mM-1cm-2. Moreover, the interference from the commonly interfering species such as urea, ascorbic acid, NaCl, L-proline and L-Valine, can be effectively avoided. The high sensitivity, wide glucose detection range and good selectivity of the electrode may be due to their synergistic effect of amorphous phase and CQDs incorporation. These findings may promote the application of amorphous Ni(OH)2 as advanced electrochemical glucose sensing materials.

Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics.

PubMed

Jang, Hyun-June; Joong Lee, Ki; Jo, Kwang-Won; Katz, Howard E; Cho, Won-Ju; Shin, Yong-Beom

2017-07-18

Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either "bottom-up" growth techniques or by "top-down" e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm 2 /Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.

Stabilizing Nanocrystalline Oxide Nanofibers at Elevated Temperatures by Coating Nanoscale Surface Amorphous Films.

PubMed

Yao, Lei; Pan, Wei; Luo, Jian; Zhao, Xiaohui; Cheng, Jing; Nishijima, Hiroki

2018-01-10

Nanocrystalline materials often exhibit extraordinary mechanical and physical properties but their applications at elevated temperatures are impaired by the rapid grain growth. Moreover, the grain growth in nanocrystalline oxide nanofibers at high temperatures can occur at hundreds of degrees lower than that would occur in corresponding bulk nanocrystalline materials, which would eventually break the fibers. Herein, by characterizing a model system of scandia-stabilized zirconia using hot-stage in situ scanning transmission electron microscopy, we discover that the enhanced grain growth in nanofibers is initiated at the surface. Subsequently, we demonstrate that coating the fibers with nanometer-thick amorphous alumina layer can enhance their temperature stability by nearly 400 °C via suppressing the surface-initiated grain growth. Such a strategy can be effectively applied to other oxide nanofibers, such as samarium-doped ceria, yttrium-stabilized zirconia, and lanthanum molybdate. The nanocoatings also increase the flexibility of the oxide nanofibers and stabilize the high-temperature phases that have 10 times higher ionic conductivity. This study provides new insights into the surface-initiated grain growth in nanocrystalline oxide nanofibers and develops a facile yet innovative strategy to improve the high-temperature stability of nanofibers for a broad range of applications.

Tailoring the Two Dimensional Electron Gas at Polar ABO3/SrTiO3 Interfaces for Oxide Electronics.

PubMed

Li, Changjian; Liu, Zhiqi; Lü, Weiming; Wang, Xiao Renshaw; Annadi, Anil; Huang, Zhen; Zeng, Shengwei; Ariando; Venkatesan, T

2015-08-26

The 2D electron gas at the polar/non-polar oxide interface has become an important platform for several novel oxide electronic devices. In this paper, the transport properties of a wide range of polar perovskite oxide ABO3/SrTiO3 (STO) interfaces, where ABO3 includes LaAlO3, PrAlO3, NdAlO3, NdGaO3 and LaGaO3 in both crystalline and amorphous forms, were investigated. A robust 4 unit cell (uc) critical thickness for metal insulator transition was observed for crystalline polar layer/STO interface while the critical thickness for amorphous ones was strongly dependent on the B site atom and its oxygen affinity. For the crystalline interfaces, a sharp transition to the metallic state (i.e. polarization catastrophe induced 2D electron gas only) occurs at a growth temperature of 515 °C which corresponds to a critical relative crystallinity of ~70 ± 10% of the LaAlO3 overlayer. This temperature is generally lower than the metal silicide formation temperature and thus offers a route to integrate oxide heterojunction based devices on silicon.

Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

DOE PAGES

Donaldson, Olivia K.; Hattar, Khalid; Trelewicz, Jason R.

2016-07-04

Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO 2 phase. While the appearance of these phases indicated the films were evolving tomore » the stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.« less

W-containing oxide layers obtained on aluminum and titanium by PEO as catalysts in thiophene oxidation

NASA Astrophysics Data System (ADS)

Rudnev, V. S.; Lukiyanchuk, I. V.; Vasilyeva, M. S.; Morozova, V. P.; Zelikman, V. M.; Tarkhanova, I. G.

2017-11-01

W-containing oxide layers fabricated on titanium and aluminum alloys by Plasma electrolytic oxidation (PEO) have been tested in the reaction of the peroxide oxidation of thiophene. Samples with two types of coatings have been investigated. Coatings I contained tungsten oxide in the matrix and on the surface of amorphous silica-titania or silica-alumina layers, while coatings II comprised crystalline WO3 and/or Al2(WO4)3. Aluminum-supported catalyst containing a smallest amount of transition metals in the form of tungsten oxides and manganese oxides in low oxidation levels showed high activity and stability.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

NASA Astrophysics Data System (ADS)

Na, Jong H.; Kitamura, M.; Arakawa, Y.

2007-11-01

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13V, an inverse subthreshold swing of 252mV/decade, and a field-effect mobility up to 1cm2/Vs at an operating voltage as low as 5V. The amorphous phase C60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.

Fabrication and characterization of copper oxide (CuO)–gold (Au)–titania (TiO{sub 2}) and copper oxide (CuO)–gold (Au)–indium tin oxide (ITO) nanowire heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chopra, Nitin, E-mail: nchopra@eng.ua.edu; Department of Biological Sciences, The University of Alabama, Tuscaloosa, AL 35487; Shi, Wenwu

2014-10-15

Nanoscale heterostructures composed of standing copper oxide nanowires decorated with Au nanoparticles and shells of titania and indium tin oxide were fabricated. The fabrication process involved surfactant-free and wet-chemical nucleation of gold nanoparticles on copper oxide nanowires followed by a line-of-sight sputtering of titania or indium tin oxide. The heterostructures were characterized using high resolution electron microscopy, diffraction, and energy dispersive spectroscopy. The interfaces, morphologies, crystallinity, phases, and chemical compositions were analyzed. The process of direct nucleation of gold nanoparticles on copper oxide nanoparticles resulted in low energy interface with aligned lattice for both the components. Coatings of polycrystalline titaniamore » or amorphous indium tin oxide were deposited on standing copper oxide nanowire–gold nanoparticle heterostructures. Self-shadowing effect due to standing nanowire heterostructures was observed for line-of-sight sputter deposition of titania or indium tin oxide coatings. Finally, the heterostructures were studied using Raman spectroscopy and ultraviolet–visible spectroscopy, including band gap energy analysis. Tailing in the band gap energy at longer wavelengths (or lower energies) was observed for the nanowire heterostructures. - Highlights: • Heterostructures comprised of CuO nanowires coated with Au nanoparticles. • Au nanoparticles exhibited nearly flat and low energy interface with nanowire. • Heterostructures were further sputter-coated with oxide shell of TiO{sub 2} or ITO. • The process resulted in coating of polycrystalline TiO{sub 2} and amorphous ITO shell.« less

Free suspension processing of oxides to form amorphous oxide materials, appendix B

NASA Technical Reports Server (NTRS)

Wouch, G.

1973-01-01

The processing of yttria, zirconia, and alumina under weightless conditions is discussed. The process consists of levitation or position control, heating and melting, superheating, and supercooling. The use of arc imaging furnaces, lasers, induction heating, microwave, and electron beam methods are analyzed to show the advantages and disadvantages of each.

Amorphous carbon in the disk around the post-AGB binary HR 4049. Discerning dust species with featureless opacity curves

NASA Astrophysics Data System (ADS)

Acke, B.; Degroote, P.; Lombaert, R.; de Vries, B. L.; Smolders, K.; Verhoelst, T.; Lagadec, E.; Gielen, C.; Van Winckel, H.; Waelkens, C.

2013-03-01

Context. Infrared spectroscopy has been extensively used to determine the mineralogy of circumstellar dust. The identification of dust species with featureless opacities, however, is still ambiguous. Here we present a method to lift the degeneracy using the combination of infrared spectroscopy and interferometry. Aims: The binary post-AGB star HR 4049 is surrounded by a circumbinary disk viewed at a high inclination angle. Apart from gaseous emission lines and molecular emission bands of polycyclic aromatic hydrocarbons (PAH), diamonds, and fullerenes, the 2-25 μm infrared spectrum is featureless. The goal of the paper is to identify the dust species responsible for the smooth spectrum. Methods: We gathered high-angular-resolution measurements in the near- and mid-infrared with the VLTI interferometric instruments AMBER and MIDI. The data set is expanded with archival Geneva optical photometry, ISO-SWS and Spitzer-IRS infrared spectroscopy, and VISIR N-band images and spectroscopy. We computed a grid of radiative-transfer models of the circumbinary disk of HR 4049 using the radiative-transfer code MCMax. We searched for models that provide good fits simultaneously to all available observations. Results: We find that the variable optical extinction towards the primary star is consistent with the presence of very small (0.01 μm) iron-bearing dust grains or amorphous carbon grains. The combination of the interferometric constraint on the disk extent and the shape of the infrared spectrum points to amorphous carbon as the dominant source of opacity in the circumbinary disk of HR 4049. The disk is optically thick to the stellar radiation in the radial direction. At infrared wavelengths it is optically thin. The PAH emission is spatially resolved in the VISIR data and emanates from a region with an extent of several hundreds of AU, with a projected photocenter displacement of several tens of AU from the disk center. The PAHs most likely reside in a bipolar outflow. Conclusions: Dust species with featureless opacity curves, such as metallic iron and amorphous carbon, can be identified by combining infrared spectroscopy and high-angular-resolution measurements. In essence, this is because the temperatures of the dust species are notably different at the same physical distance to the star. Appendices A and B are available in electronic form at http://www.aanda.org

Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

DTIC Science & Technology

2012-01-05

oxide -based thin film transistors ( TFTs ) have attracted much attention for applications like flexible electronic devices. The...crystals, and ~ 1.5 cm2.V-1.s-1 for pentacene thin films ). A number of groups have demonstrated TFTs based on α- oxide semiconductors such as zinc oxide ...show excellent long-term stability at room temperature. Results: High-performance amorphous (α-) InGaZnO-based thin film transistors ( TFTs )

Fabrication of TiO2 Crystalline Coatings by Combining Ti-6Al-4V Anodic Oxidation and Heat Treatments

PubMed Central

Schvezov, Carlos Enrique; Ares, Alicia Esther

2015-01-01

The bio- and hemocompatibility of titanium alloys are due to the formation of a TiO2 layer. This natural oxide may have fissures which are detrimental to its properties. Anodic oxidation is used to obtain thicker films. By means of this technique, at low voltages oxidation, amorphous and low roughness coatings are obtained, while, above a certain voltage, crystalline and porous coatings are obtained. According to the literature, the crystalline phases of TiO2, anatase, and rutile would present greater biocompatibility than the amorphous phase. On the other hand, for hemocompatible applications, smooth and homogeneous surfaces are required. One way to obtain crystalline and homogeneous coatings is by heat treatments after anodic oxidation. The aim of this study is to evaluate the influence of heat treatments on the thickness, morphology, and crystalline structure of the TiO2 anodic coatings. The characterization was performed by optical and scanning electron microscopy, X-ray diffraction, and X-ray reflectometry. Coatings with different colors of interference were obtained. There were no significant changes in the surface morphology and roughness after heat treatment of 500°C. Heat treated coatings have different proportions of the crystalline phases, depending on the voltage of anodic oxidation and the temperature of the heat treatment. PMID:25784939

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Protecting hydrogenation-generated oxygen vacancies in BiVO4 photoanode for enhanced water oxidation with conformal ultrathin amorphous TiO2 layer

NASA Astrophysics Data System (ADS)

Zhang, Yang; Zhang, Xintong; Wang, Dan; Wan, Fangxu; Liu, Yichun

2017-05-01

Introducing appropriate amount of oxygen vacancies by hydrogenation treatment is a simple and efficient way to improve the photoelectrochemical performance of nanostructured oxide photoanodes. However, the hydrogenation effect is often not durable due to the gradual healing of oxygen vacancies at or close to surface of photoanodes. Herein, we tackled the problem by conformal coating the hydrogenated nanoporous BiVO4 (H-BiVO4) photoanode with an ultrathin layer of amorphous TiO2. Photoelectrochemical measurements showed that a 4 nm-thick TiO2 layer could significantly improve the stability of H-BiVO4 photoanode for repeated working test, with negligible influence on the initial photocurrent compared to the uncoated one. Mott-Schottky and linear sweep voltammetry measurements showed that donor density and photocurrent density of the H-BiVO4 electrode almost decayed to the values of pristine BiVO4 electrode after 3 h test, while the amorphous TiO2-coated electrode only degraded by 6% and 5% of the initial values respectively in the same period. The investigation thus suggested that the amorphous TiO2 layer did protect the oxygen vacancies in H-BiVO4 photoanode by isolating these oxygen vacancies from environmental oxygen, while at the same time not impeding the interfacial charge transfer to water molecules due to its leaky nature.

Gas uptake and chemical aging of semisolid organic aerosol particles

PubMed Central

Shiraiwa, Manabu; Ammann, Markus; Koop, Thomas; Pöschl, Ulrich

2011-01-01

Organic substances can adopt an amorphous solid or semisolid state, influencing the rate of heterogeneous reactions and multiphase processes in atmospheric aerosols. Here we demonstrate how molecular diffusion in the condensed phase affects the gas uptake and chemical transformation of semisolid organic particles. Flow tube experiments show that the ozone uptake and oxidative aging of amorphous protein is kinetically limited by bulk diffusion. The reactive gas uptake exhibits a pronounced increase with relative humidity, which can be explained by a decrease of viscosity and increase of diffusivity due to hygroscopic water uptake transforming the amorphous organic matrix from a glassy to a semisolid state (moisture-induced phase transition). The reaction rate depends on the condensed phase diffusion coefficients of both the oxidant and the organic reactant molecules, which can be described by a kinetic multilayer flux model but not by the traditional resistor model approach of multiphase chemistry. The chemical lifetime of reactive compounds in atmospheric particles can increase from seconds to days as the rate of diffusion in semisolid phases can decrease by multiple orders of magnitude in response to low temperature or low relative humidity. The findings demonstrate that the occurrence and properties of amorphous semisolid phases challenge traditional views and require advanced formalisms for the description of organic particle formation and transformation in atmospheric models of aerosol effects on air quality, public health, and climate. PMID:21690350

Thermodynamic studies of studtite thermal decomposition pathways via amorphous intermediates UO 3, U 2O 7, and UO 4

DOE PAGES

Guo, Xiaofeng; Wu, Di; Xu, Hongwu; ...

2016-09-01

The thermal decomposition of studtite (UO 2)O 2(H 2O) 2·2H 2O results in a series of intermediate X-ray amorphous materials with general composition UO 3+x (x = 0, 0.5, 1). As an extension of a structural study on U 2O 7, this work provides detailed calorimetric data on these amorphous oxygen-rich materials since their energetics and thermal stability are unknown. These were characterized in situ by thermogravimetry, and mass spectrometry. Ex situ X-ray diffraction and infrared spectroscopy characterized their chemical bonding and local structures. This detailed characterization formed the basis for obtaining formation enthalpies by high temperature oxide melt solutionmore » calorimetry. The thermodynamic data demonstrate the metastability of the amorphous UO 3+x materials, and explain their irreversible and spontaneous reactions to generate oxygen and form metaschoepite. Thus, formation of studtite in the nuclear fuel cycle, followed by heat treatment, can produce metastable amorphous UO 3+x materials that pose the risk of significant O 2 gas. Quantitative knowledge of the energy landscape of amorphous UO 3+x was provided for stability analysis and assessment of conditions for decomposition.« less

Lattice animals in diffusion limited binary colloidal system

NASA Astrophysics Data System (ADS)

Shireen, Zakiya; Babu, Sujin B.

2017-08-01

In a soft matter system, controlling the structure of the amorphous materials has been a key challenge. In this work, we have modeled irreversible diffusion limited cluster aggregation of binary colloids, which serves as a model for chemical gels. Irreversible aggregation of binary colloidal particles leads to the formation of a percolating cluster of one species or both species which are also called bigels. Before the formation of the percolating cluster, the system forms a self-similar structure defined by a fractal dimension. For a one component system when the volume fraction is very small, the clusters are far apart from each other and the system has a fractal dimension of 1.8. Contrary to this, we will show that for the binary system, we observe the presence of lattice animals which has a fractal dimension of 2 irrespective of the volume fraction. When the clusters start inter-penetrating, we observe a fractal dimension of 2.5, which is the same as in the case of the one component system. We were also able to predict the formation of bigels using a simple inequality relation. We have also shown that the growth of clusters follows the kinetic equations introduced by Smoluchowski for diffusion limited cluster aggregation. We will also show that the chemical distance of a cluster in the flocculation regime will follow the same scaling law as predicted for the lattice animals. Further, we will also show that irreversible binary aggregation comes under the universality class of the percolation theory.

Opposite correlations between cation disordering and amorphization resistance in spinels versus pyrochlores

PubMed Central

Uberuaga, Blas Pedro; Tang, Ming; Jiang, Chao; Valdez, James A.; Smith, Roger; Wang, Yongqiang; Sickafus, Kurt E.

2015-01-01

Understanding and predicting radiation damage evolution in complex materials is crucial for developing next-generation nuclear energy sources. Here, using a combination of ion beam irradiation, transmission electron microscopy and X-ray diffraction, we show that, contrary to the behaviour observed in pyrochlores, the amorphization resistance of spinel compounds correlates directly with the energy to disorder the structure. Using a combination of atomistic simulation techniques, we ascribe this behaviour to structural defects on the cation sublattice that are present in spinel but not in pyrochlore. Specifically, because of these structural defects, there are kinetic pathways for the relaxation of disorder in spinel that are absent in pyrochlore. This leads to a direct correlation between amorphization resistance and disordering energetics in spinel, the opposite of that observed in pyrochlores. These results provide new insight into the origins of amorphization resistance in complex oxides beyond fluorite derivatives. PMID:26510750

Near-infrared–driven decomposition of metal precursors yields amorphous electrocatalytic films

PubMed Central

Salvatore, Danielle A.; Dettelbach, Kevan E.; Hudkins, Jesse R.; Berlinguette, Curtis P.

2015-01-01

Amorphous metal-based films lacking long-range atomic order have found utility in applications ranging from electronics applications to heterogeneous catalysis. Notwithstanding, there is a limited set of fabrication methods available for making amorphous films, particularly in the absence of a conducting substrate. We introduce herein a scalable preparative method for accessing oxidized and reduced phases of amorphous films that involves the efficient decomposition of molecular precursors, including simple metal salts, by exposure to near-infrared (NIR) radiation. The NIR-driven decomposition process provides sufficient localized heating to trigger the liberation of the ligand from solution-deposited precursors on substrates, but insufficient thermal energy to form crystalline phases. This method provides access to state-of-the-art electrocatalyst films, as demonstrated herein for the electrolysis of water, and extends the scope of usable substrates to include nonconducting and temperature-sensitive platforms. PMID:26601148

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ann N.; Keller, Lindsay P.; Messenger, Scott, E-mail: lan-anh.n.nguyen@nasa.gov

We report the chemical and structural analysis of nine presolar silicate grains and one presolar oxide grain from the ungrouped chondrite Acfer 094 and the CR chondrite Queen Alexandra Range 99177. Oxygen isotopic analyses indicate that five of these grains condensed in the outflows of asymptotic giant branch (AGB) stars, four have supernova (SN) origins, and one grain likely has a nova origin. Transmission electron microscopy studies show that most of the grains are amorphous with widely varying non-stoichiometric chemical compositions. Three crystalline AGB grains were identified: a clinoenstatite-containing grain assemblage, a Fe-rich olivine grain, and a nanocrystalline enstatite grainmore » encased in an amorphous silicate shell. An amorphous stoichiometric enstatite (MgSiO{sub 3}) SN grain likely condensed as a crystal and was later rendered amorphous. We do not observe a systematic difference in the chemistries and mineralogies of presolar silicates from different stellar sources, suggesting that the grains formed under a similar range of conditions.« less

Opposite correlations between cation disordering and amorphization resistance in spinels versus pyrochlores

DOE PAGES

Uberuaga, Blas Pedro; Tang, Ming; Jiang, Chao; ...

2015-10-29

Understanding and predicting radiation damage evolution in complex materials is crucial for developing next-generation nuclear energy sources. Here, using a combination of ion beam irradiation, transmission electron microscopy and X-ray diffraction, we show that, contrary to the behaviour observed in pyrochlores, the amorphization resistance of spinel compounds correlates directly with the energy to disorder the structure. Using a combination of atomistic simulation techniques, we ascribe this behaviour to structural defects on the cation sublattice that are present in spinel but not in pyrochlore. Specifically, because of these structural defects, there are kinetic pathways for the relaxation of disorder in spinelmore » that are absent in pyrochlore. This leads to a direct correlation between amorphization resistance and disordering energetics in spinel, the opposite of that observed in pyrochlores. Furthermore, these results provide new insight into the origins of amorphization resistance in complex oxides beyond fluorite derivatives.« less

Electrooptical properties and structural features of amorphous ITO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amosova, L. P., E-mail: l-amosova@mail.ru

2015-03-15

Thin indium-tin oxide (ITO) films are deposited onto cold substrates by magnetron-assisted sputtering. The dependences of the structural, electrical, and optical properties of the films on the oxygen content in the atmosphere of sputtering and the growth rate are studied. It is shown that, if the substrate temperature is no higher than the ITO crystallization temperature and the conditions of growth deviate from the optimal relationship between the oxygen pressure and the growth rate, the resistance of the layers can be six or seven orders of magnitude higher than the resistance of conducting amorphous layers and reach hundreds of megaohms.more » At the same time, the optical properties of insulating layers in the visible spectral region are completely identical to the properties of the conducing amorphous modification. A conceptual model of defects responsible for the insulating properties of amorphous ITO is proposed.« less

Opposite correlations between cation disordering and amorphization resistance in spinels versus pyrochlores.

PubMed

Uberuaga, Blas Pedro; Tang, Ming; Jiang, Chao; Valdez, James A; Smith, Roger; Wang, Yongqiang; Sickafus, Kurt E

2015-10-29

Understanding and predicting radiation damage evolution in complex materials is crucial for developing next-generation nuclear energy sources. Here, using a combination of ion beam irradiation, transmission electron microscopy and X-ray diffraction, we show that, contrary to the behaviour observed in pyrochlores, the amorphization resistance of spinel compounds correlates directly with the energy to disorder the structure. Using a combination of atomistic simulation techniques, we ascribe this behaviour to structural defects on the cation sublattice that are present in spinel but not in pyrochlore. Specifically, because of these structural defects, there are kinetic pathways for the relaxation of disorder in spinel that are absent in pyrochlore. This leads to a direct correlation between amorphization resistance and disordering energetics in spinel, the opposite of that observed in pyrochlores. These results provide new insight into the origins of amorphization resistance in complex oxides beyond fluorite derivatives.

Preparation and Characterization of ZnO Nanoparticles Supported on Amorphous SiO2

PubMed Central

Chen, Ying; Ding, Hao; Sun, Sijia

2017-01-01

In order to reduce the primary particle size of zinc oxide (ZnO) and eliminate the agglomeration phenomenon to form a monodisperse state, Zn2+ was loaded on the surface of amorphous silica (SiO2) by the hydrogen bond association between hydroxyl groups in the hydrothermal process. After calcining the precursors, dehydration condensation among hydroxyl groups occurred and ZnO nanoparticles supported on amorphous SiO2 (ZnO–SiO2) were prepared. Furthermore, the SEM and TEM observations showed that ZnO nanoparticles with a particle size of 3–8 nm were uniformly and dispersedly loaded on the surface of amorphous SiO2. Compared with pure ZnO, ZnO–SiO2 showed a much better antibacterial performance in the minimum inhibitory concentration (MIC) test and the antibacterial properties of the paint adding ZnO–SiO2 composite. PMID:28796157

Design and assembly of ternary Pt/Re/SnO2 NPs by controlling the zeta potential of individual Pt, Re, and SnO2 NPs

NASA Astrophysics Data System (ADS)

Drzymała, Elżbieta; Gruzeł, Grzegorz; Pajor-Świerzy, Anna; Depciuch, Joanna; Socha, Robert; Kowal, Andrzej; Warszyński, Piotr; Parlinska-Wojtan, Magdalena

2018-05-01

In this study Pt, Re, and SnO2 nanoparticles (NPs) were combined in a controlled manner into binary and ternary combinations for a possible application for ethanol oxidation. For this purpose, zeta potentials as a function of the pH of the individual NPs solutions were measured. In order to successfully combine the NPs into Pt/SnO2 and Re/SnO2 NPs, the solutions were mixed together at a pH guaranteeing opposite zeta potentials of the metal and oxide NPs. The individually synthesized NPs and their binary/ternary combinations were characterized by Fourier transform infrared spectroscopy (FTIR) and scanning transmission electron microscopy (STEM) combined with energy dispersive X-ray spectroscopy (EDS) analysis. FTIR and XPS spectroscopy showed that the individually synthesized Pt and Re NPs are metallic and the Sn component was oxidized to SnO2. STEM showed that all NPs are well crystallized and the sizes of the Pt, Re, and SnO2 NPs were 2.2, 1.0, and 3.4 nm, respectively. Moreover, EDS analysis confirmed the successful formation of binary Pt/SnO2 and Re/SnO2 NP, as well as ternary Pt/Re/SnO2 NP combinations. This study shows that by controlling the zeta potential of individual metal and oxide NPs, it is possible to assemble them into binary and ternary combinations. [Figure not available: see fulltext.

Multimillion atom simulations of dynamics of oxidation of an aluminum nanoparticle and nanoindentation on ceramics.

PubMed

Vashishta, Priya; Kalia, Rajiv K; Nakano, Aiichiro

2006-03-02

We have developed a first-principles-based hierarchical simulation framework, which seamlessly integrates (1) a quantum mechanical description based on the density functional theory (DFT), (2) multilevel molecular dynamics (MD) simulations based on a reactive force field (ReaxFF) that describes chemical reactions and polarization, a nonreactive force field that employs dynamic atomic charges, and an effective force field (EFF), and (3) an atomistically informed continuum model to reach macroscopic length scales. For scalable hierarchical simulations, we have developed parallel linear-scaling algorithms for (1) DFT calculation based on a divide-and-conquer algorithm on adaptive multigrids, (2) chemically reactive MD based on a fast ReaxFF (F-ReaxFF) algorithm, and (3) EFF-MD based on a space-time multiresolution MD (MRMD) algorithm. On 1920 Intel Itanium2 processors, we have demonstrated 1.4 million atom (0.12 trillion grid points) DFT, 0.56 billion atom F-ReaxFF, and 18.9 billion atom MRMD calculations, with parallel efficiency as high as 0.953. Through the use of these algorithms, multimillion atom MD simulations have been performed to study the oxidation of an aluminum nanoparticle. Structural and dynamic correlations in the oxide region are calculated as well as the evolution of charges, surface oxide thickness, diffusivities of atoms, and local stresses. In the microcanonical ensemble, the oxidizing reaction becomes explosive in both molecular and atomic oxygen environments, due to the enormous energy release associated with Al-O bonding. In the canonical ensemble, an amorphous oxide layer of a thickness of approximately 40 angstroms is formed after 466 ps, in good agreement with experiments. Simulations have been performed to study nanoindentation on crystalline, amorphous, and nanocrystalline silicon nitride and silicon carbide. Simulation on nanocrystalline silicon carbide reveals unusual deformation mechanisms in brittle nanophase materials, due to coexistence of brittle grains and soft amorphous-like grain boundary phases. Simulations predict a crossover from intergranular continuous deformation to intragrain discrete deformation at a critical indentation depth.

Amorphous iron–chromium oxide nanoparticles with long-term stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iacob, Mihail; Institute of Chemistry of ASM, Academiei str. 3, Chisinau 2028, Republic of Moldova; Cazacu, Maria, E-mail: mcazacu@icmpp.ro

2015-05-15

Highlights: • Fe–Cr oxide nanoparticles with pre-established metals ratio were obtained. • The amorphous state and its long-term stability were highlighted by X-ray diffraction. • The average diameter of dried nanoparticles was 3.5 nm, as was estimated by TEM, AFM. • In hexane dispersion, nanoparticles with diameter in the range 2.33–4.85 nm were found. • Superparamagnetic state of NPs co-exists with diamagnetism of the organic layer. - Abstract: Iron–chromium nanoparticles (NPs) were obtained through the thermal decomposition of μ{sub 3}-oxo heterotrinuclear (FeCr{sub 2}O) acetate in the presence of sunflower oil and dodecylamine (DA) as surfactants. The average diameter of themore » NPs was 3.5 nm, as estimated on the basis of transmission electron microscopy and atomic force microscopy images. Both techniques revealed the formation of roughly approximated spheres with some irregularities and agglomerations in larger spherical assemblies of 50–100 nm. In hexane, NPs with diameters in the 2.33–4.85 nm range are individually dispersed, as emphasized by dynamic light scattering measurements. The amorphous nature of the product was emphasized by X-ray powder diffraction. The study of the magnetic properties shows the presence of superparamagnetic state of iron–chromium oxide NPs and the diamagnetic contribution from DA layer forming a shell of NPs.« less

Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heinemann, M. D.; van Hest, M. F. A. M.; Contreras, M.

Cu(In,Ga)Se2 (CIGS) solar cells in superstrate configuration promise improved light management and higher stability compared to substrate devices, but they have yet to deliver comparable power conversion efficiencies (PCEs). Chemical reactions between the CIGS layer and the front contact were shown in the past to deteriorate the p-n junction in superstrate devices, which led to lower efficiencies compared to the substrate-type devices. This work aims to solve this problem by identifying a buffer layer between the CIGS layer and the front contact, acting as the electron transport layer, with an optimized electron affinity, doping density and chemical stability. Using combinatorialmore » material exploration we identified amorphous gallium oxide (a-GaOx) as a potentially suitable buffer layer material. The best results were obtained for a-GaOx with an electron affinity that was found to be comparable to that of CIGS. Based on the results of device simulations, it is assumed that detrimental interfacial acceptor states are present at the interface between CIGS and a-GaOx. However, these initial experiments indicate the potential of a-GaOx in this application, and how to reach performance parity with substrate devices, by further increase of its n-type doping density.« less

Fast and Universal Approach to Encapsulating Transition Bimetal Oxide Nanoparticles in Amorphous Carbon Nanotubes under an Atmospheric Environment Based on the Marangoni Effect.

PubMed

Li, Shuoyu; Liu, Yuyi; Guo, Peisheng; Wang, Chengxin

2017-09-13

Transition metal oxide nanoparticles capsuled in amorphous carbon nanotubes (ACNTs) are attractive anode materials of lithium-ion batteries (LIBs). Here, we first designed a fast and universal method with a hydromechanics conception which is called Marangoni flow to fabricate transition bimetal oxides (TBOs) in the ACNT composite with a better electrochemistry performance. Marangoni flows can produce a liquid column with several centimeters of height in a tube with one side immersed in the liquid. The key point to induce a Marangoni flow is to make a gradient of the surface tension between the surface and the inside of the solution. With our research, we control the gradient of the surface tension by controlling the viscosity of a solution. To show how our method could be generally used, we synthesize two anode materials such as (a) CoFe 2 O 4 @ACNTs, and (b) NiFe 2 O 4 @ACNTs. All of these have a similar morphology which is ∼20 μm length with a diameter of 80-100 nm for the ACNTs, and the particles (inside the ACNTs) are smaller than 5 nm. In particular, there are amorphous carbons between the nanoparticles. All of the composite materials showed an outstanding electrochemistry performance which includes a high capacity and cycling stability so that after 600 cycles the capacity changed by less than 3%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Häusler, I., E-mail: ines.haeusler@bam.de; Dörfel, I., E-mail: Ilona.doerfel@bam.de; Peplinski, B., E-mail: Burkhard.peplinski@bam.de

A model system was used to simulate the properties of tribofilms which form during automotive braking. The model system was prepared by ball milling of a blend of 70 vol.% iron oxides, 15 vol.% molybdenum disulfide and 15 vol.% graphite. The resulting mixture was characterized by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and various transmission electron microscopic (TEM) methods, including energy dispersive X-ray spectroscopy (EDXS), high resolution investigations (HRTEM) with corresponding simulation of the HRTEM images, diffraction methods such as scanning nano-beam electron diffraction (SNBED) and selected area electron diffraction (SAED). It could be shown that the ballmore » milling caused a reduction of the grain size of the initial components to the nanometer range. Sometimes even amorphization or partial break-down of the crystal structure was observed for MoS{sub 2} and graphite. Moreover, chemical reactions lead to a formation of surface coverings of the nanoparticles by amorphous material, molybdenum oxides, and iron sulfates as derived from XPS. - Highlights: • Ball milling of iron oxides, MoS{sub 2}, and graphite to simulate a tribofilm • Increasing coefficient of friction after ball milling of the model blend • Drastically change of the diffraction pattern of the powder mixture • TEM & XPS showed the components of the milled mixture and the process during milling. • MoS{sub 2} and graphite suffered a loss in translation symmetry or became amorphous.« less

Efficient removal of arsenic from water using a granular adsorbent: Fe-Mn binary oxide impregnated chitosan bead.

PubMed

Qi, Jianying; Zhang, Gaosheng; Li, Haining

2015-10-01

A novel sorbent of Fe-Mn binary oxide impregnated chitosan bead (FMCB) was fabricated through impregnating Fe-Mn binary oxide into chitosan matrix. The FMCB is sphere-like with a diameter of 1.6-1.8 mm, which is effective for both As(V) and As(III) sorption. The maximal sorption capacities are 39.1 and 54.2 mg/g, respectively, outperforming most of reported granular sorbents. The arsenic was mainly removed by adsorbing onto the Fe-Mn oxide component. The coexisting SO4(2-), HCO3(-) and SiO3(2-) have no great influence on arsenic sorption, whereas, the HPO4(2-) shows negative effects. The arsenic-loaded FMCB could be effectively regenerated using NaOH solution and repeatedly used. In column tests, about 1500 and 3200 bed volumes of simulated groundwater containing 233 μg/L As(V) and As(III) were respectively treated before breakthrough. These results demonstrate the superiority of the FMCB in removing As(V) and As(III), indicating that it is a promising candidate for arsenic removal from real drinking water. Copyright © 2015 Elsevier Ltd. All rights reserved.

Grain boundary selective oxidation and intergranular stress corrosion crack growth of high-purity nickel binary alloys in high-temperature hydrogenated water

DOE PAGES

Bruemmer, S. M.; Olszta, M. J.; Toloczko, M. B.; ...

2017-11-26

The effects of alloying elements in Ni-5at%X binary alloys on intergranular (IG) corrosion and stress corrosion cracking (SCC) have been assessed in 300–360 °C hydrogenated water at the Ni/NiO stability line. Alloys with Cr or Al additions exhibited grain boundary oxidation and IGSCC, while localized degradation was not observed for pure Ni, Ni-Cu or Ni-Fe alloys. Environment-enhanced crack growth was determined by comparing the response in water and N 2 gas. Lastly, results demonstrate that selective grain boundary oxidation of Cr and Al promoted IGSCC of these Ni alloys in hydrogenated water.

Grain boundary selective oxidation and intergranular stress corrosion crack growth of high-purity nickel binary alloys in high-temperature hydrogenated water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruemmer, S. M.; Olszta, M. J.; Toloczko, M. B.

The effects of alloying elements in Ni-5at%X binary alloys on intergranular (IG) corrosion and stress corrosion cracking (SCC) have been assessed in 300–360 °C hydrogenated water at the Ni/NiO stability line. Alloys with Cr or Al additions exhibited grain boundary oxidation and IGSCC, while localized degradation was not observed for pure Ni, Ni-Cu or Ni-Fe alloys. Environment-enhanced crack growth was determined by comparing the response in water and N 2 gas. Lastly, results demonstrate that selective grain boundary oxidation of Cr and Al promoted IGSCC of these Ni alloys in hydrogenated water.

Grain boundary selective oxidation and intergranular stress corrosion crack growth of high-purity nickel binary alloys in high-temperature hydrogenated water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruemmer, S. M.; Olszta, M. J.; Toloczko, M. B.

The effects of alloying elements in Ni-5at%X binary alloys on intergranular (IG) corrosion and stress corrosion cracking (SCC) have been assessed in 300-360°C hydrogenated water at the Ni/NiO stability line. Alloys with Cr or Al additions exhibited grain boundary oxidation and IGSCC, while localized degradation was not observed for pure Ni, Ni-Cu or Ni-Fe alloys. Environment-enhanced crack growth was determined by comparing the response in water and N2 gas. Results demonstrate that selective grain boundary oxidation of Cr and Al promoted IGSCC of these Ni alloys in hydrogenated water.

Compositionally Dependent Nonlinear Optical Bandgap Behavior of Mixed Anodic Oxides in Niobium-Titanium System.

PubMed

Bleckenwegner, Petra; Mardare, Cezarina Cela; Cobet, Christoph; Kollender, Jan Philipp; Hassel, Achim Walter; Mardare, Andrei Ionut

2017-02-13

Optical bandgap mapping of Nb-Ti mixed oxides anodically grown on a thin film parent metallic combinatorial library was performed via variable angle spectroscopic ellipsometry (VASE). A wide Nb-Ti compositional spread ranging from Nb-90 at.% Ti to Nb-15 at.% Ti deposited by cosputtering was used for this purpose. The Nb-Ti library was stepwise anodized at potentials up to 10 V SHE, and the anodic oxides optical properties were mapped along the Nb-Ti library with 2 at.% resolution. The surface dissimilarities along the Nb-Ti compositional gradient were minimized by tuning the deposition parameters, thus allowing a description of the mixed Nb-Ti oxides based on a single Tauc-Lorentz oscillator for data fitting. Mapping of the Nb-Ti oxides optical bandgap along the entire compositional spread showed a clear deviation from the linear model based on mixing individual Nb and Ti electronegativities proportional to their atomic fractions. This is attributed to the strong amorphization and an in-depth compositional gradient of the mixed oxides. A systematic optical bandgap decrease toward values as low as 2.0 eV was identified at approximately 50 at.% Nb. Mixing of Nb 2 O 5 and TiO 2 with both amorphous and crystalline phases is concluded, whereas the possibility of complex Nb a Ti b O y oxide formation during anodization is unlikely.

Mineralogy of Sediments on a Cold and Icy Early Mars

NASA Astrophysics Data System (ADS)

Rampe, E. B.; Horgan, B. H. N.; Smith, R.; Scudder, N.; Rutledge, A. M.; Bamber, E.; Morris, R. V.

2017-12-01

The water-related minerals discovered in ancient martian terrains suggest liquid water was abundant on the surface and/or near subsurface during Mars' early history. The debate remains, however, whether these minerals are indicative of a warm and wet or cold and icy climate. To characterize mineral assemblages of cold and icy mafic terrains, we analyzed pro- and supraglacial rocks and sediments from the Collier and Diller glacial valleys in Three Sisters, Oregon. We identified primary and secondary phases using X-ray diffraction (XRD), scanning and transmission electron microscopies with energy dispersive spectroscopy (SEM, TEM, EDS), and visible/short-wave-infrared (VSWIR) and thermal-infrared (TIR) spectroscopies. Samples from both glacial valleys are dominated by primary igneous minerals (i.e., plagioclase and pyroxene). Sediments in the Collier glacial valley contain minor to trace amounts of phyllosilicates and zeolites, but these phases are likely detrital and sourced from hydrothermally altered units on North Sister. We find that the authigenic phases in cold and icy mafic terrains are poorly crystalline and/or amorphous. TEM-EDS analyses of the <2 um size fraction of glacial flour shows the presence of many different nanophase materials, including iron oxides, devitrified volcanic glass, and Fe-Si-Al (e.g., proto-clay) phases. A variety of primary and secondary amorphous materials (e.g., volcanic glass, leached glass, allophane) have been suggested from orbital IR data from Mars, and the CheMin XRD on the Curiosity rover has identified X-ray amorphous materials in all rocks and soils measured to date. The compositions of the Gale Crater amorphous components cannot be explained by primary volcanic glass alone and likely include secondary silicates, iron oxides, and sulfates. We suggest that the prevalence of amorphous materials on the martian surface and the variety of amorphous components may be a signature of a cold and icy climate on Early Mars.

Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors

NASA Astrophysics Data System (ADS)

Martins, R.; Barquinha, P.; Ferreira, I.; Pereira, L.; Gonçalves, G.; Fortunato, E.

2007-02-01

The role of order and disorder on the electronic performances of n-type ionic oxides such as zinc oxide, gallium zinc oxide, and indium zinc oxide used as active (channel) or passive (drain/source) layers in thin film transistors (TFTs) processed at room temperature are discussed, taking as reference the known behavior observed in conventional covalent semiconductors such as silicon. The work performed shows that while in the oxide semiconductors the Fermi level can be pinned up within the conduction band, independent of the state of order, the same does not happen with silicon. Besides, in the oxide semiconductors the carrier mobility is not bandtail limited and so disorder does not affect so strongly the mobility as it happens in covalent semiconductors. The electrical properties of the oxide films (resistivity, carrier concentration, and mobility) are highly dependent on the oxygen vacancies (source of free carriers), which can be controlled by changing the oxygen partial pressure during the deposition process and/or by adding other metal ions to the matrix. In this case, we make the oxide matrix less sensitive to the presence of oxygen, widening the range of oxygen partial pressures that can be used and thus improving the process control of the film resistivity. The results obtained in fully transparent TFT using polycrystalline ZnO or amorphous indium zinc oxide (IZO) as channel layers and highly conductive poly/nanocrystalline ZGO films or amorphous IZO as drain/source layers show that both devices work in the enhancement mode, but the TFT with the highest electronic saturation mobility and on/off ratio 49.9cm2/Vs and 4.3×108, respectively, are the ones in which the active and passive layers are amorphous. The ZnO TFT whose channel is based on polycrystalline ZnO, the mobility and on/off ratio are, respectively, 26cm2/Vs and 3×106. This behavior is attributed to the fact that the electronic transport is governed by the s-like metal cation conduction bands, not significantly affected by any type of angular disorder promoted by the 2p O states related to the valence band, or small amounts of incorporated metal impurities that lead to a better control of vacancies and of the TFT off current.

Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

NASA Astrophysics Data System (ADS)

Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

2018-05-01

We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

Hexagonal Ag nanoarrays induced enhancement of blue light emission from amorphous oxidized silicon nitride via localized surface plasmon coupling.

PubMed

Ma, Zhongyuan; Ni, Xiaodong; Zhang, Wenping; Jiang, Xiaofan; Yang, Huafeng; Yu, Jie; Wang, Wen; Xu, Ling; Xu, Jun; Chen, Kunji; Feng, Duan

2014-11-17

A significant enhancement of blue light emission from amorphous oxidized silicon nitride (a-SiNx:O) films is achieved by introduction of ordered and size-controllable arrays of Ag nanoparticles between the silicon substrate and a-SiNx:O films. Using hexagonal arrays of Ag nanoparticles fabricated by nanosphere lithography, the localized surface plasmons (LSPs) resonance can effectively increase the internal quantum efficiency from 3.9% to 13.3%. Theoretical calculation confirms that the electromagnetic field-intensity enhancement is through the dipole surface plasma coupling with the excitons of a-SiNx:O films, which demonstrates a-SiNx:O films with enhanced blue emission are promising for silicon-based light-emitting applications by patterned Ag arrays.

Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell

2014-03-17

We explore substoichiometric molybdenum trioxide (MoO{sub x}, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9 mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selectivemore » heterojunction partners to inorganic semiconductors.« less

Friction, wear, and transfer of carbon and graphite to copper, chromium, and aluminum metal surfaces in vacuum

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1973-01-01

Sliding friction experiments were conducted with amorphous and fully graphitized carbons sliding on copper and on films of chromium and aluminum on copper. Auger emission spectroscopy analysis was used to monitor carbon transfer to the metal surfaces. Friction and wear were also measured. Metal surfaces were examined both in the clean state and with normal oxides present. Results indicate that different metals have an important effect on friction, wear, and transfer characteristics. With amorphous carbon, the least chemically active metal gave the highest wear and amount of carbon transfer. Both forms of carbon gave lower friction and wear and lower transfer rates when in contact with clean, as opposed to oxide-covered, chromium surfaces. With copper, the reverse was true; cleaning was detrimental.

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hwang, Ah Young; Ji, Hyuk; Kim, Sang Tae

2016-04-11

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm{sup 2}/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (V{sub TH}) of 1.5 V, and I{sub ON/OFF} ratio of ∼10{sup 7}. A significant improvement in the field-effect mobility (up to ∼33.5 cm{sup 2}/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V{sub TH}, or I{sub ON/OFF} ratio due to the presence of a highly ordered microstructure.

Single Crystal Fibers of Yttria-Stabilized Cubic Zirconia with Ternary Oxide Additions

NASA Technical Reports Server (NTRS)

Ritzert, F. J.; Yun, H. M.; Miner, R. V.

1997-01-01

Single crystal fibers of yttria (Y2O3)-stabilized cubic zirconia, (ZrO2) with ternary oxide additions were grown using the laser float zone fiber processing technique. Ternary additions to the ZrO2-Y2O3 binary system were studied aimed at increasing strength while maintaining the high coefficient of thermal expansion of the binary system. Statistical methods aided in identifying the most promising ternary oxide candidate (Ta2O5, Sc2O3, and HfO2) and optimum composition. The yttria, range investigated was 14 to 24 mol % and the ternary oxide component ranged from 1 to 5 mol %. Hafnium oxide was the most promising ternary oxide component based on 816 C tensile strength results and ease of fabrication. The optimum composition for development was 81 ZrO2-14 Y203-5 HfO2 based upon the same elevated temperature strength tests. Preliminary results indicate process improvements could improve the fiber performance. We also investigated the effect of crystal orientation on strength.

Carbohydrate-Assisted Combustion Synthesis To Realize High-Performance Oxide Transistors.

PubMed

Wang, Binghao; Zeng, Li; Huang, Wei; Melkonyan, Ferdinand S; Sheets, William C; Chi, Lifeng; Bedzyk, Michael J; Marks, Tobin J; Facchetti, Antonio

2016-06-08

Owing to high carrier mobilities, good environmental/thermal stability, excellent optical transparency, and compatibility with solution processing, thin-film transistors (TFTs) based on amorphous metal oxide semiconductors (AOSs) are promising alternatives to those based on amorphous silicon (a-Si:H) and low-temperature (<600 °C) poly-silicon (LTPS). However, solution-processed display-relevant indium-gallium-tin-oxide (IGZO) TFTs suffer from low carrier mobilities and/or inferior bias-stress stability versus their sputtered counterparts. Here we report that three types of environmentally benign carbohydrates (sorbitol, sucrose, and glucose) serve as especially efficient fuels for IGZO film combustion synthesis to yield high-performance TFTs. The results indicate that these carbohydrates assist the combustion process by lowering the ignition threshold temperature and, for optimal stoichiometries, enhancing the reaction enthalpy. IGZO TFT mobilities are increased to >8 cm(2) V(-1) s(-1) on SiO2/Si gate dielectrics with significantly improved bias-stress stability. The first correlations between precursor combustion enthalpy and a-MO densification/charge transport are established.

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

NASA Astrophysics Data System (ADS)

Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-04-01

Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

Ion Sensitive Transparent-Gate Transistor for Visible Cell Sensing.

PubMed

Sakata, Toshiya; Nishimura, Kotaro; Miyazawa, Yuuya; Saito, Akiko; Abe, Hiroyuki; Kajisa, Taira

2017-04-04

In this study, we developed an ion-sensitive transparent-gate transistor (IS-TGT) for visible cell sensing. The gate sensing surface of the IS-TGT is transparent in a solution because a transparent amorphous oxide semiconductor composed of amorphous In-Ga-Zn-oxide (a-IGZO) with a thin SiO 2 film gate that includes an indium tin oxide (ITO) film as the source and drain electrodes is utilized. The pH response of the IS-TGT was found to be about 56 mV/pH, indicating approximately Nernstian response. Moreover, the potential signals of the IS-TGT for sodium and potassium ions, which are usually included in biological environments, were evaluated. The optical and electrical properties of the IS-TGT enable cell functions to be monitored simultaneously with microscopic observation and electrical measurement. A platform based on the IS-TGT can be used as a simple and cost-effective plate-cell-sensing system based on thin-film fabrication technology in the research field of life science.

Optoelectronic properties of valence-state-controlled amorphous niobium oxide

NASA Astrophysics Data System (ADS)

Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

2016-06-01

In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

PubMed

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Hydrothermal-reduction synthesis of manganese oxide nanomaterials for electrochemical supercapacitors.

PubMed

Zhang, Xiong; Chen, Yao; Yu, Peng; Ma, Yanwei

2010-11-01

In the present work, amorphous manganese oxide nanomaterials have been synthesized by a common hydrothermal method based on the redox reaction between MnO4(-) and Fe(2+) under an acidic condition. The synthesized MnO2 samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and electrochemical studies. XRD results showed that amorphous manganese oxide phase was obtained. XPS quantitative analysis revealed that the atomic ratio of Mn to Fe was 3.5 in the MnO2 samples. TEM images showed the porous structure of the samples. Electrochemical properties of the MnO2 electrodes were studied using cyclic voltammetry and galvanostatic charge-discharge cycling in 1 M Na2SO4 aqueous electrolyte, which showed excellent pseudocapacitance properties. A specific capacitance of 192 Fg(-1) at a current density of 0.5 Ag(-1) was obtained at the potential window from -0.1 to 0.9 V (vs. SCE).

AMOchar: Amorphous manganese oxide coating of biochar improves its efficiency at removing metal(loid)s from aqueous solutions.

PubMed

Trakal, Lukáš; Michálková, Zuzana; Beesley, Luke; Vítková, Martina; Ouředníček, Petr; Barceló, Andreu Piqueras; Ettler, Vojtěch; Číhalová, Sylva; Komárek, Michael

2018-06-01

A novel sorbent made from biochar modified with an amorphous Mn oxide (AMOchar) was compared with pure biochar, pure AMO, AMO+biochar mixtures and biochar+birnessite composite for the removal of various metal(loid)s from aqueous solutions using adsorption and solid-state analyses. In comparison with the pristine biochar, both Mn oxide-biochar composites were able to remove significantly greater quantities of various metal(loid)s from the aqueous solutions, especially at a ratio 2:1 (AMO:biochar). The AMOchar proved most efficient, removing almost 99, 91 and 51% of Pb, As and Cd, respectively. Additionally, AMOchar and AMO+biochar mixture exhibited reduced Mn leaching, compared to pure AMO. Therefore, it is concluded that the synthesis of AMO and biochar is able to produce a double acting sorbent ('dorbent') of enhanced efficiency, compared with the individual deployment of their component materials. Copyright © 2017 Elsevier B.V. All rights reserved.

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm{sup 2}/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V{sub O}) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recoverymore » in turn-on voltage indicates that the dense V{sub O} in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.« less

Amorphous cobalt potassium phosphate microclusters as efficient photoelectrochemical water oxidation catalyst

NASA Astrophysics Data System (ADS)

Zhang, Ye; Zhao, Chunsong; Dai, Xuezeng; Lin, Hong; Cui, Bai; Li, Jianbao

2013-12-01

A novel amorphous cobalt potassium phosphate hydrate compound (KCoPO4·H2O) is identified to be active photocatalyst for oxygen evolution reaction (OER) to facilitate hydrogen generation from water photolysis. It has been synthesized through a facile and cost-effective solution-based precipitation method using earth-abundant materials. Its highly porous structure and large surface areas are found to be responsible for the excellent electrochemical performance featuring a low OER onset at ∼550 mVSCE and high current density in alkaline condition. Unlike traditional cobalt-based spinel oxides (Co3O4, NiCo2O4) and phosphate (Co-Pi, Co(PO3)2) electrocatalysts, with proper energy band alignment for light-assisted water oxidation, cobalt potassium phosphate hydrate also exhibits robust visible-light response, generating a photocurrent density of ∼200 μA cm-2 at 0.7 VSCE. This catalyst could thus be considered as a promising candidate to perform photoelectrochemical water splitting.

A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

PubMed

Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

2015-09-01

We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

Surface plasmon effects in the absorption enhancements of amorphous silicon solar cells with periodical metal nanowall and nanopillar structures.

PubMed

Lin, Hung-Yu; Kuo, Yang; Liao, Cheng-Yuan; Yang, C C; Kiang, Yean-Woei

2012-01-02

The authors numerically investigate the absorption enhancement of an amorphous Si solar cell, in which a periodical one-dimensional nanowall or two-dimensional nanopillar structure of the Ag back-reflector is fabricated such that a dome-shaped grating geometry is formed after Si deposition and indium-tin-oxide coating. In this investigation, the effects of surface plasmon (SP) interaction in such a metal nanostructure are of major concern. Absorption enhancement in most of the solar spectral range of significant amorphous Si absorption (320-800 nm) is observed in a grating solar cell. In the short-wavelength range of high amorphous Si absorption, the weakly wavelength-dependent absorption enhancement is mainly caused by the broadband anti-reflection effect, which is produced through the surface nano-grating structures. In the long-wavelength range of diminishing amorphous Si absorption, the highly wavelength-sensitive absorption enhancement is mainly caused by Fabry-Perot resonance and SP interaction. The SP interaction includes the contributions of surface plasmon polariton and localized surface plasmon.

The effect of amorphous TiO2 in P25 on dye-sensitized solar cell performance.

PubMed

Al-Attafi, Kadhim; Nattestad, Andrew; Wu, Qijie; Ide, Yusuke; Yamauchi, Yusuke; Dou, Shi Xue; Kim, Jung Ho

2018-01-04

P25 is one of the most widely used forms of titanium(iv) oxide (TiO 2 ), routinely utilised in dye-sensitised solar cells (DSCs), where it is often employed as a control, in spite of its poorly defined nature and the typically low device efficiency (or possibly because of this). Work by Park in 2000 and later by Lin et al. suggests that the rutile component might not be to blame for this, as has often been claimed. Recently it has been observed that P25 has quite a sizable amorphous content. A method to selectively remove this non-crystalline material has been developed, allowing for scrutiny of the role this amorphous material plays. Here we compare hydrothermally treated P25 (H-P25) with the as-received material, realizing solar-to-electric conversion efficiencies of 5.3% and 3.2% respectively. More importantly, this reveals important information about the detrimental effect of amorphous TiO 2 on DSC performance, with broader implications, as most researchers do not actively examine their synthesized materials for the presence of an amorphous component.

Continuous method of producing silicon carbide fibers

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Nguyen, Kimmai Thi (Inventor); Rabe, James Alan (Inventor)

1999-01-01

This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.

Optical multilayers with an amorphous fluoropolymer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, R.; Loomis, G.E.; Lindsey, E.F.

1994-07-01

Multilayered coatings were made by physical vapor deposition (PVD) of a perfluorinated amorphous polymer, Teflon AF2400, together with other optical materials. A high reflector at 1064 run was made with ZnS and AF2400. An all-organic 1064-nm reflector was made from AF2400 and polyethylene. Oxide (HfO{sub 2}, SiO{sub 2}) compatibility was also tested. Each multilayer system adhered to itself. The multilayers were influenced by coating stress and unintentional temperature rises during PVD deposition.

Template confined synthesis of amorphous carbon nanotubes and its confocal Raman microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maity, Supratim; Roychowdhury, Tuhin; Chattopadhyay, Kalyan Kumar, E-mail: kalyan-chattopadhyay@yahoo.com

2014-04-24

Amorphous carbon nanotubes (aCNTs) were synthesized by AAO (anodic aluminum oxide) template at a temperature 500 °C in nitrogen atmosphere using the citric acid as a carbon source without the help of any catalyst particles. Morphological analysis of the as prepared samples was carried out by field emission scanning electron microscopy (FESEM). Confocal Raman imaging has been studied and an attempt has been made to find out the graphitic (sp{sup 2}) and disordered phase of the CNTs.

Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

NASA Astrophysics Data System (ADS)

Chen, Ya-Yi; Liu, Yuan; Wu, Zhao-Hui; Wang, Li; Li, Bin; En, Yun-Fei; Chen, Yi-Qiang

2018-04-01

Not Available Supported by the National Natural Science Foundation of China under Grant No 61574048, the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2015B090901048, and the Pearl River S&T Nova Program of Guangzhou under Grant No 201710010172.

Multifunctional cerium-based nanomaterials and methods for producing the same

DOEpatents

O'Keefe, Matthew J.; Castano Londono, Carlos E.; Fahrenholtz, William G.

2018-01-09

Embodiments relate to a cerium-containing nano-coating composition, the composition including an amorphous matrix including one or more of cerium oxide, cerium hydroxide, and cerium phosphate; and crystalline regions including one or more of crystalline cerium oxide, crystalline cerium hydroxide, and crystalline cerium phosphate. The diameter of each crystalline region is less than about 50 nanometers.

Preparation of TiO(2) layers on cp-Ti and Ti6Al4V by thermal and anodic oxidation and by sol-gel coating techniques and their characterization.

PubMed

Velten, D; Biehl, V; Aubertin, F; Valeske, B; Possart, W; Breme, J

2002-01-01

The excellent biocompatibility of titanium and its alloys used, for example, for medical devices, is associated with the properties of their surface oxide. For a better understanding of the tissue reaction in contact with the oxide layer, knowledge of the chemical and physical properties of this layer is of increasing interest. In this study, titania films were produced on cp-Ti and Ti6Al4V substrates by thermal oxidation, anodic oxidation, and by the sol-gel process. The thickness and structure of the films produced under different conditions were determined by ellipsometry, infrared spectroscopy, and X-ray diffraction measurements. The corrosion properties of these layers were investigated by current density-potential curves under physiological conditions. The oxide layers produced on cp-Ti and Ti6Al4V by thermal oxidation consist of TiO(2) in the rutile structure. For the anodized samples the structure of TiO(2) is a mixture of amorphous phase and anatase. The structure of the coatings produced by the sol-gel process for a constant annealing time depends on the annealing temperature, and with increasing temperature successively amorphous, anatase, and rutile structure is observed. Compared to the uncoated, polished substrate with a natural oxide layer, the corrosion resistance of cp-Ti and Ti6Al4V is increased for the samples with an oxide layer thickness of about 100 nm, independent of the oxidation procedure. Copyright 2001 John Wiley & Sons, Inc.

Groundwater Sampling at ISCO Sites: Binary Mixtures of Volatile Organic Compounds and Persulfate

EPA Science Inventory

In-situ chemical oxidation involves the introduction of a chemical oxidant into the subsurface for the purpose of transforming ground-water contaminants into less harmful byproducts. Due to oxidant persistence, ground water samples collected at hazardous waste sites may contain o...

Local structure distortion induced by Ti dopants boosting the pseudocapacitance of RuO2-based supercapacitors

NASA Astrophysics Data System (ADS)

Chen, I.-Li; Wei, Yu-Chen; Lu, Kueih-Tzu; Chen, Tsan-Yao; Hu, Chi-Chang; Chen, Jin-Ming

2015-09-01

Binary oxides with atomic ratios of Ru/Ti = 90/10, 70/30, and 50/50 were fabricated using H2O2-oxidative precipitation with the assistance of a cetyltrimethylammonium bromide (CTAB) template, followed by a thermal treatment at 200 °C. The characteristics of electron structure and local structure extracted from X-ray absorption spectroscopy (XAS) and transmission electron microscopy (TEM) analyses indicate that incorporation of Ti into the RuO2 lattice produces not only the local structural distortion of the RuO6 octahedra in (Ru-Ti)O2 with an increase in the central Ru-Ru distance but also a local crystallization of RuO2. Among the three binary oxides studied, (Ru70-Ti30)O2 exhibits a capacitance improvement of about 1.4-fold relative to the CTAB-modified RuO2, mainly due to the enhanced crystallinity of the distorted RuO6 structure rather than the surface area effect. Upon increasing the extent of Ti doping, the deteriorated supercapacitive performance of (Ru50-Ti50)O2 results from the formation of localized nano-clusters of TiO2 crystallites. These results provide insight into the important role of Ti doping in RuO2 that boosts the pseudocapacitive performance for RuO2-based supercapacitors. The present result is crucial for the design of new binary oxides for supercapacitor applications with extraordinary performance.Binary oxides with atomic ratios of Ru/Ti = 90/10, 70/30, and 50/50 were fabricated using H2O2-oxidative precipitation with the assistance of a cetyltrimethylammonium bromide (CTAB) template, followed by a thermal treatment at 200 °C. The characteristics of electron structure and local structure extracted from X-ray absorption spectroscopy (XAS) and transmission electron microscopy (TEM) analyses indicate that incorporation of Ti into the RuO2 lattice produces not only the local structural distortion of the RuO6 octahedra in (Ru-Ti)O2 with an increase in the central Ru-Ru distance but also a local crystallization of RuO2. Among the three binary oxides studied, (Ru70-Ti30)O2 exhibits a capacitance improvement of about 1.4-fold relative to the CTAB-modified RuO2, mainly due to the enhanced crystallinity of the distorted RuO6 structure rather than the surface area effect. Upon increasing the extent of Ti doping, the deteriorated supercapacitive performance of (Ru50-Ti50)O2 results from the formation of localized nano-clusters of TiO2 crystallites. These results provide insight into the important role of Ti doping in RuO2 that boosts the pseudocapacitive performance for RuO2-based supercapacitors. The present result is crucial for the design of new binary oxides for supercapacitor applications with extraordinary performance. Electronic supplementary information (ESI) available: A series of Ru K-edge EXAFS spectra fitting results for RuO2 together with oxides with different Ru-Ti atomic ratios treated at 200 °C. See DOI: 10.1039/c5nr03660g

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Keri R.; Judge, Elizabeth J.; Barefield, James E.

We show the analysis of light water reactor simulated used nuclear fuel using laser-induced breakdown spectroscopy (LIBS) is explored using a simplified version of the main oxide phase. The main oxide phase consists of the actinides, lanthanides, and zirconium. The purpose of this study is to develop a rapid, quantitative technique for measuring zirconium in a uranium dioxide matrix without the need to dissolve the material. A second set of materials including cerium oxide is also analyzed to determine precision and limit of detection (LOD) using LIBS in a complex matrix. Two types of samples are used in this study:more » binary and ternary oxide pellets. The ternary oxide, (U,Zr,Ce)O 2 pellets used in this study are a simplified version the main oxide phase of used nuclear fuel. The binary oxides, (U,Ce)O 2 and (U,Zr)O 2 are also examined to determine spectral emission lines for Ce and Zr, potential spectral interferences with uranium and baseline LOD values for Ce and Zr in a UO 2 matrix. In the spectral range of 200 to 800 nm, 33 cerium lines and 25 zirconium lines were identified and shown to have linear correlation values (R 2) > 0.97 for both the binary and ternary oxides. The cerium LOD in the (U,Ce)O 2 matrix ranged from 0.34 to 1.08 wt% and 0.94 to 1.22 wt% in (U,Ce,Zr)O 2 for 33 of Ce emission lines. The zirconium limit of detection in the (U,Zr)O 2 matrix ranged from 0.84 to 1.15 wt% and 0.99 to 1.10 wt% in (U,Ce,Zr)O 2 for 25 Zr lines. Finally, the effect of multiple elements in the plasma and the impact on the LOD is discussed.« less

Assessment and prediction of joint algal toxicity of binary mixtures of graphene and ionic liquids.

PubMed

Wang, Zhuang; Zhang, Fan; Wang, Se; Peijnenburg, Willie J G M

2017-10-01

Graphene and ionic liquids (ILs) released into the environment will interact with each other. So far however, the risks associated with the concurrent exposure of biota to graphene and ILs in the environment have received little attention. The research reported here focused on observing and predicting the joint toxicity effects in the green alga Scenedesmus obliquus exposed to binary mixtures of intrinsic graphene (iG)/graphene oxide (GO) and five ILs of varying anionic and cationic types. The isolated ILs in the binary mixtures were the main contributors to toxicity. The binary GO-IL mixtures resulted in more severe joint toxicity than the binary iG-IL mixtures, irrespective of mixture ratios. The mechanism of the joint toxicity may be associated with the adsorption capability of the graphenes for the ILs, the dispersion stability of the graphenes in aquatic media, and modulation of the binary mixtures-induced oxidative stress. A toxic unit assessment showed that the graphene and IL toxicities were additive at low concentration of the mixtures but antagonistic at high concentration of the mixtures. Predictions made using the concentration addition and independent action models were close to the observed joint toxicities regardless of mixture types and mixture ratios. These findings provide new insights that are of use in the risk assessment of mixtures of engineered nanoparticles and other environmentally relevant contaminants. Copyright © 2017 Elsevier Ltd. All rights reserved.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

Polymeric behavior evaluation of PVP K30-poloxamer binary carrier for solid dispersed nisoldipine by experimental design.

PubMed

Kyaw Oo, May; Mandal, Uttam K; Chatterjee, Bappaditya

2017-02-01

High melting point polymeric carrier without plasticizer is unacceptable for solid dispersion (SD) by melting method. Combined polymer-plasticizer carrier significantly affects drug solubility and tableting property of SD. To evaluate and optimize the combined effect of a binary carrier consisting PVP K30 and poloxamer 188, on nisoldipine solubility and tensile strength of amorphous SD compact (SD compact ) by experimental design. SD of nisoldpine (SD nisol ) was prepared by melt mixing with different PVP K30 and poloxamer amount. A 3 2 factorial design was employed using nisoldipine solubility and tensile strength of SD compact as response variables. Statistical optimization by design expert software, and SD nisol characterization using ATR FTIR, DSC and microscopy were done. PVP K30:poloxamer, at a ratio of 3.73:6.63, was selected as the optimized combination of binary polymeric carrier resulting nisoldipine solubility of 115 μg/mL and tensile strength of 1.19 N/m 2 . PVP K30 had significant positive effect on both responses. Increase in poloxamer concentration after a certain level decreased nisoldipine solubility and tensile strength of SD compact . An optimized PVP K30-poloxamer binary composition for SD carrier was developed. Tensile strength of SD compact can be considered as a response for experimental design to optimize SD.

Moisture-Mediated Interactions Between Amorphous Maltodextrins and Crystalline Fructose.

PubMed

Thorat, Alpana; Marrs, Krystin N; Ghorab, Mohamed K; Meunier, Vincent; Forny, Laurent; Taylor, Lynne S; Mauer, Lisa J

2017-05-01

The effects of coformulating amorphous maltodextrins (MDs) and crystalline fructose, a deliquescent solid, on the moisture sorption, deliquescence point (RH 0 ), and glass transition temperature (T g ) behaviors were determined. Moisture sorption profiles of binary fructose:MD mixtures and individual ingredients were generated using controlled relative humidity (RH) desiccators and by dynamic vapor sorption techniques. Blends exhibited synergistic moisture uptake at RHs below the RH 0 of fructose, attributed to partial dissolution of fructose in plasticized MD matrices without a significant reduction in the RH 0 of the undissolved fructose. Increasing storage temperature decreased the onset RH for moisture sorption synergy. At all storage RHs, the measured T g (2nd scan) was significantly reduced in fructose:MD mixtures compared to individual MDs, and was related to both the synergistic moisture uptake in the blends and heat-induced ternary fructose-MD-water interactions in the differential scanning calorimeter. Differences were found between the behavior of fructose:MD blends and previous reports of sucrose:MD and NaCl:MD blends, caused in part by the lower RH 0 of fructose. The enhanced moisture sorption in blends of deliquescent and amorphous ingredients could lead to problematic moisture-induced changes if storage conditions are not controlled. © 2017 Institute of Food Technologists®.

Binary Synergy Strengthening and Toughening of Bio-Inspired Nacre-like Graphene Oxide/Sodium Alginate Composite Paper.

PubMed

Chen, Ke; Shi, Bin; Yue, Yonghai; Qi, Juanjuan; Guo, Lin

2015-08-25

A crucial requirement for most engineering materials is the excellent balance of strength and toughness. By mimicking the hybrid hierarchical structure in nacre, a kind of nacre-like paper based on binary hybrid graphene oxide (GO)/sodium alginate (SA) building blocks has been successfully fabricated. Systematic evaluation for the mechanical property in different (dry/wet) environment/after thermal annealing shows a perfect combination of high strength and toughness. Both of the parameters are nearly many-times higher than those of similar materials because of the synergistic strengthening/toughening enhancement from the binary GO/SA hybrids. The successful fabrication route offers an excellent approach to design advanced strong integrated nacre-like composite materials, which can be applied in tissue engineering, protection, aerospace, and permeable membranes for separation and delivery.

Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions

NASA Astrophysics Data System (ADS)

Newby, Pascal J.; Canut, Bruno; Bluet, Jean-Marie; Gomès, Séverine; Isaiev, Mykola; Burbelo, Roman; Termentzidis, Konstantinos; Chantrenne, Patrice; Fréchette, Luc G.; Lysenko, Vladimir

2013-07-01

In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first time such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 °C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.

Amorphization of cobalt monoxide nanocrystals and related explosive gas sensing applications.

PubMed

Li, L H; Xiao, J; Yang, G W

2015-10-16

Amorphous nanomaterials have attracted attention due to their excellent performances, highly comparable to their crystalline counterparts. Sensor materials with amorphous phases are usually evaluated to be unsuitable for sensors because of poor performance. As a matter of fact, amorphous nanomaterials have rather unique sensor behaviors. Here, we report the amorphousization of cobalt monoxide (CoO) nanocrystals driven by a unique process involved in laser ablation in liquid (LAL). We also established that a fast and nonequilibrium process created by LAL results in the amorphousization of nanocrystals. The as-prepared amorphous CoO (a-CoO) nanoflakes possess a high aspect ratio, which showed good sensing of explosive gases. The fabricated gas sensor can detect CO and H2 at levels as low as 5 and 10 ppm, respectively, at 100 °C. The performance characteristics of this sensor, including high sensitivity, low working temperature, and low detection limit, are superior to those of sensors made with crystalline phase oxides. Meanwhile, a temperature-dependent p-n transition was observed in the sensor's response to CO, suggesting that the sensing properties can be tailored by changing the carrier type, thus tuning the selectivity of sensors to different gases. These findings demonstrate the potential applications of amorphous nanomaterials as gas sensor components.

Evolution of Defect Structures and Deep Subgap States during Annealing of Amorphous In-Ga-Zn Oxide for Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Jia, Junjun; Suko, Ayaka; Shigesato, Yuzo; Okajima, Toshihiro; Inoue, Keiko; Hosomi, Hiroyuki

2018-01-01

We investigate the evolution behavior of defect structures and the subgap states in In-Ga-Zn oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray absorption fine-structure (EXAFS) measurements, positron annihilation lifetime spectroscopy (PALS), and cathodoluminescence (CL) spectroscopy, aiming to understand the relationship between defect structures and subgap states. EXAFS measurements reveal the varied oxygen coordination numbers around cations during postannealing and confirm two types of point defects, namely, excess oxygen around Ga atoms and oxygen deficiency around In and/or Zn atoms. PALS suggests the existence of cation-vacancy (VM )-related clusters with neutral or negative charge in both amorphous and polycrystalline IGZO films. CL spectra show a main emission band at approximately 1.85 eV for IGZO films, and a distinct shoulder located at about 2.15 eV for IGZO films postannealed above 600 °C . These two emission bands are assigned to a recombination between the electrons in the conduction band and/or in the shallow donor levels near the conduction band and the acceptors trapped above the valence-band maximum. The shallow donors are attributed to the oxygen deficiency, and the acceptors are thought to possibly arise from the excess oxygen or the VM-related clusters. These results open up an alternative route for understanding the device instability of amorphous IGZO-based thin-film transistors, especially the presence of the neutral or negatively charged VM-related clusters in amorphous IGZO films.

Sculpting Nanoscale Functional Channels in Complex Oxides Using Energetic Ions and Electrons

DOE PAGES

Sachan, Ritesh; Zarkadoula, Eva; Ou, Xin; ...

2018-04-26

The formation of metastable phases has attracted significant attention because of their unique properties and potential functionalities. In the present study, we demonstrate the phase conversion of energetic-ion-induced amorphous nanochannels/tracks into a metastable defect fluorite in A 2B 2O 7 structured complex oxides by electron irradiation. Through in situ electron irradiation experiments in a scanning transmission electron microscope, we observe electron-induced epitaxial crystallization of the amorphous nanochannels in Yb 2Ti 2O 7 into the defect fluorite. This energetic-electron-induced phase transformation is attributed to the coupled effect of ionization-induced electronic excitations and local heating, along with subthreshold elastic energy transfers. Wemore » also show the role of ionic radii of A-site cations (A = Yb, Gd, and Sm) and B-site cations (Ti and Zr) in facilitating the electron-beam-induced crystallization of the amorphous phase to the defect-fluorite structure. The formation of the defect-fluorite structure is eased by the decrease in the difference between ionic radii of A- and B-site cations in the lattice. Molecular dynamics simulations of thermal annealing of the amorphous phase nanochannels in A 2B 2O 7 draw parallels to the electron-irradiation-induced crystallization and confirm the role of ionic radii in lowering the barrier for crystallization. Furthermore, these results suggest that employing guided electron irradiation with atomic precision is a useful technique for selected area phase formation in nanoscale printed devices.« less

Sculpting Nanoscale Functional Channels in Complex Oxides Using Energetic Ions and Electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachan, Ritesh; Zarkadoula, Eva; Ou, Xin

The formation of metastable phases has attracted significant attention because of their unique properties and potential functionalities. In the present study, we demonstrate the phase conversion of energetic-ion-induced amorphous nanochannels/tracks into a metastable defect fluorite in A 2B 2O 7 structured complex oxides by electron irradiation. Through in situ electron irradiation experiments in a scanning transmission electron microscope, we observe electron-induced epitaxial crystallization of the amorphous nanochannels in Yb 2Ti 2O 7 into the defect fluorite. This energetic-electron-induced phase transformation is attributed to the coupled effect of ionization-induced electronic excitations and local heating, along with subthreshold elastic energy transfers. Wemore » also show the role of ionic radii of A-site cations (A = Yb, Gd, and Sm) and B-site cations (Ti and Zr) in facilitating the electron-beam-induced crystallization of the amorphous phase to the defect-fluorite structure. The formation of the defect-fluorite structure is eased by the decrease in the difference between ionic radii of A- and B-site cations in the lattice. Molecular dynamics simulations of thermal annealing of the amorphous phase nanochannels in A 2B 2O 7 draw parallels to the electron-irradiation-induced crystallization and confirm the role of ionic radii in lowering the barrier for crystallization. Furthermore, these results suggest that employing guided electron irradiation with atomic precision is a useful technique for selected area phase formation in nanoscale printed devices.« less

Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance

NASA Astrophysics Data System (ADS)

Fukuzawa, H.; Yuasa, H.; Koi, K.; Iwasaki, H.; Tanaka, Y.; Takahashi, Y. K.; Hono, K.

2005-05-01

We have successfully observed a nanoconstricted structure for current-confined-path (CCP) effect in current-perpendicular-to-plane-giant-magnetoresistance (CPP-GMR) spin valves. By inserting an AlCu nano-oxide layer (NOL) formed by ion-assisted oxidation (IAO) between a pinned layer and a free layer, the MR ratio was increased while maintaining a small area resistance product (RA). The cross-sectional high-resolution transmission electron microscopy image of the sample with RA =380mΩμm2, ΔRA =16mΩμm2, and MR ratio=4.3% showed that an amorphous oxide layer is a main part of the NOL that blocks the electron conduction perpendicular to plane. Some parts of the NOL are punched through crystalline, metallic channels having a diameter of a few nanometers, which are thought to work as nanoconstricted electron conduction paths between the pinned layer and the free layer. Nano-energy-dispersive-x-ray-spectrum analysis also showed that Cu is enriched in the metallic channels, whereas Al is enriched in the amorphous oxide region, indicating that the metallic channel is made of Cu and the oxide is made of Al2O3. The nanoconstricted structure with good segregation between the metallic channel and the oxide layer enables us to realize a large MR ratio in CCP-CPP spin valves.

The formation of unsaturated zones within cemented paste backfill mixtures-effects on the release of copper, nickel, and zinc.

PubMed

Hamberg, Roger; Maurice, Christian; Alakangas, Lena

2018-05-13

Flooding of cemented paste backfill (CPB) filled mine workings is, commonly, a slow process and could lead to the formation of unsaturated zones within the CPB fillings. This facilitates the oxidation of sulfide minerals and thereby increases the risk of trace metal leaching. Pyrrhotitic tailings from a gold mine (cyanidation tailing (CT)), containing elevated concentrations of nickel (Ni), copper (Cu), and zinc (Zn), were mixed with cement and/or fly ash (1-3 wt%) to form CT-CPB mixtures. Pyrrhotite oxidation progressed more extensively during unsaturated conditions, where acidity resulted in dissolution of the Ni, Cu, and Zn associated with amorphous Fe precipitates and/or cementitious phases. The establishment of acidic, unsaturated conditions in CT-CBP:s with low fractions (1 wt%) of binders increased the Cu release (to be higher than that from CT), owing to the dissolution of Cu-associated amorphous Fe precipitates. In CT-CPB:s with relatively high proportions of binder, acidity from pyrrhotite oxidation was buffered to a greater extent. At this stage, Zn leaching increased due the occurrence of fly ash-specific Zn species soluble in alkaline conditions. Irrespective of binder proportion and water saturation level, the Ni and Zn release were lower, compared to that in CT. Fractions of Ni, Zn, and Cu associated with acid-soluble phases or amorphous Fe precipitates, susceptible to remobilization under acidic conditions, increased in tandem with binder fractions. Pyrrhotite oxidation occurred irrespective of the water saturation level in the CPB mixtures. That, in turn, poses an environmental risk, whereas a substantial proportion of Ni, Cu, and Zn was associated with acid-soluble phases.

Validation of an updated fractionation and indirect speciation procedure for inorganic arsenic in oxic and suboxic soils and sediments.

PubMed

Lock, Alan; Wallschläger, Dirk; McMurdo, Colin; Tyler, Laura; Belzile, Nelson; Spiers, Graeme

2016-12-01

A sequential extraction procedure (SEP) for the speciation analysis of As(III) and As(V) in oxic and suboxic soils and sediments was validated using a natural lake sediment and three certified reference materials, as well as spike recoveries of As(III) and As(V). Many of the extraction steps have been previously validated making the procedure useful for comparisons to similar previous SEP studies. The novel aspect of this research is the validation for the SEP to maintain As(III) and As(V) species. The proposed five step extraction procedure includes the extraction agents (NH 4 ) 2 SO 4 , NH 4 H 2 PO 4 , H 3 PO 4  + NH 2 OH·HCl, oxalate + ascorbic acid (heated), and HNO 3  + HCl + HF, targeting operationally defined easily exchangeable, strongly sorbed, amorphous Fe oxide bound, crystalline Fe oxide bound, and residual As fractions, respectively. The third extraction step, H 3 PO 4  + NH 2 OH·HCl, has not been previously validated for fraction selectivity. We present evidence for this extraction step to target As complexed with amorphous Fe oxides when used in the SEP proposed here. All solutions were analyzed on ICP-MS. The greatest concentrations of As were extracted from the amorphous Fe oxide fraction and the dominant species was As(V). Lake sediment materials were found to have higher As(III) concentrations than the soil materials. Because different soils/sediments have different chemical characteristics, maintenance of As species during extractions must be validated for specific soil/sediment types using spiking experiments. Copyright © 2016 Elsevier Ltd. All rights reserved.

Spatial atomic layer deposition of ZnO/TiO{sub 2} nanolaminates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Rong, E-mail: rongchen@mail.hust.edu.cn; Lin, Ji-Long; He, Wen-Jie

2016-09-15

Spatial atomic layer deposition (S-ALD) is a potential high-throughput manufacturing technique offering fast and large scale ultrathin films deposition. Here, an S-ALD system with modular injectors is introduced for fabricating binary oxides and their nanolaminates. By optimizing the deposition conditions, both ZnO and TiO{sub 2} films demonstrate linear growth and desired surface morphology. The as-deposited ZnO film has high carrier mobility, and the TiO{sub 2} film shows suitable optical transmittance and band gap. The ZnO/TiO{sub 2} nanolaminates are fabricated by alternating substrate movement between each S-ALD modular units of ZnO and TiO{sub 2}. The grazing incidence x-ray diffraction spectra ofmore » nanolaminates demonstrating the signature peaks are weaker for the same thickness nanolaminates with more bilayers, suggesting tuning nanolaminates from crystalline to amorphous. Optical transmittances of ZnO/TiO{sub 2} laminates are enhanced with the increase of the bilayers' number in the visible range. Refractive indices of nanolaminates increase with the thickness of each bilayer decreasing, which demonstrates the feasibility of obtaining desired refractive indices by controlling the bilayer number. The electronic properties, including mobility, carrier concentration, and conductivity, are also tunable with different bilayers.« less

Dynamics of Oxidation of Aluminum Nanoclusters using Variable Charge Molecular-Dynamics Simulations on Parallel Computers

NASA Astrophysics Data System (ADS)

Campbell, Timothy; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya; Ogata, Shuji; Rodgers, Stephen

1999-06-01

Oxidation of aluminum nanoclusters is investigated with a parallel molecular-dynamics approach based on dynamic charge transfer among atoms. Structural and dynamic correlations reveal that significant charge transfer gives rise to large negative pressure in the oxide which dominates the positive pressure due to steric forces. As a result, aluminum moves outward and oxygen moves towards the interior of the cluster with the aluminum diffusivity 60% higher than that of oxygen. A stable 40 Å thick amorphous oxide is formed; this is in excellent agreement with experiments.

Diffuse flow hydrothermal manganese mineralization along the active Mariana and southern Izu-Bonin arc system, western Pacific

USGS Publications Warehouse

Hein, J.R.; Schulz, M.S.; Dunham, R.E.; Stern, R.J.; Bloomer, S.H.

2008-01-01

Abundant ferromanganese oxides were collected along 1200 km of the active Izu-Bonin-Mariana arc system. Chemical compositions and mineralogy show that samples were collected from two deposit types: Fe-Mn crusts of mixed hydrogenetic/hydrothermal origin and hydrothermal Mn oxide deposits; this paper addresses only the second type. Mn oxides cement volcaniclastic and biogenic sandstone and breccia layers (Mn sandstone) and form discrete dense stratabound layers along bedding planes and within beds (stratabound Mn). The Mn oxide was deposited within coarse-grained sediments from diffuse flow systems where precipitation occurred below the seafloor. Deposits were exposed at the seabed by faulting, mass wasting, and erosion. Scanning electron microscopy and microprobe analyses indicate the presence of both amorphous and crystalline 10 ?? and 7 ?? manganate minerals, the fundamental chemical difference being high water contents in the amorphous Mn oxides. Alternation of amorphous and crystalline laminae occurs in many samples, which likely resulted from initial rapid precipitation of amorphous Mn oxides from waxing pulses of hydrothermal fluids followed by precipitation of slow forming crystallites during waning stages. The chemical composition is characteristic of a hydrothermal origin including strong fractionation between Fe (mean 0.9 wt %) and Mn (mean 48 wt %) for the stratabound Mn, generally low trace metal contents, and very low rare earth element and platinum group element contents. However, Mo, Cd, Zn, Cu, Ni, and Co occur in high concentrations in some samples and may be good indicator elements for proximity to the heat source or to massive sulfide deposits. For the Mn sandstones, Fe (mean-8.4%) and Mn (12.4%) are not significantly fractionated because of high Fe contents in the volcaniclastic material. However, the proportion of hydrothermal Fe (nondetrital Fe) to total Fe is remarkably constant (49-58%) for all the sample groups, regardless of the degree of Mn mineralization. Factor analyses indicate various mixtures of two dominant components: hydrothermal Mn oxide for the stratabound Mn and detrital aluminosilicate for the Mn-cemented sandstone; and two minor components, hydrothermal Fe oxyhydroxide and biocarbonate/biosilica. Our conceptual model shows that Mn mineralization was produced by hydrothermal convection cells within arc volcanoes and sedimentary prisms that occur along, the flanks and within calderas. The main source of hydrothermal fluid was seawater that penetrated through fractures, faults, and permeable volcanic edifices. The fluids were heated by magma, enriched in metals by leaching of basement rocks and sediments, and mixed with magmatic fluids and gases. Dikes and sills may have been another source of heat that drove small-scale circulation within sedimentary prisms. Copyright 2008 by the American Geophysical Union.

Diffuse flow hydrothermal manganese mineralization along the active Mariana and southern Izu-Bonin arc system, western Pacific

NASA Astrophysics Data System (ADS)

Hein, James R.; Schulz, Marjorie S.; Dunham, Rachel E.; Stern, Robert J.; Bloomer, Sherman H.

2008-08-01

Abundant ferromanganese oxides were collected along 1200 km of the active Izu-Bonin-Mariana arc system. Chemical compositions and mineralogy show that samples were collected from two deposit types: Fe-Mn crusts of mixed hydrogenetic/hydrothermal origin and hydrothermal Mn oxide deposits; this paper addresses only the second type. Mn oxides cement volcaniclastic and biogenic sandstone and breccia layers (Mn sandstone) and form discrete dense stratabound layers along bedding planes and within beds (stratabound Mn). The Mn oxide was deposited within coarse-grained sediments from diffuse flow systems where precipitation occurred below the seafloor. Deposits were exposed at the seabed by faulting, mass wasting, and erosion. Scanning electron microscopy and microprobe analyses indicate the presence of both amorphous and crystalline 10 Å and 7 Å manganate minerals, the fundamental chemical difference being high water contents in the amorphous Mn oxides. Alternation of amorphous and crystalline laminae occurs in many samples, which likely resulted from initial rapid precipitation of amorphous Mn oxides from waxing pulses of hydrothermal fluids followed by precipitation of slow forming crystallites during waning stages. The chemical composition is characteristic of a hydrothermal origin including strong fractionation between Fe (mean 0.9 wt %) and Mn (mean 48 wt %) for the stratabound Mn, generally low trace metal contents, and very low rare earth element and platinum group element contents. However, Mo, Cd, Zn, Cu, Ni, and Co occur in high concentrations in some samples and may be good indicator elements for proximity to the heat source or to massive sulfide deposits. For the Mn sandstones, Fe (mean 8.4%) and Mn (12.4%) are not significantly fractionated because of high Fe contents in the volcaniclastic material. However, the proportion of hydrothermal Fe (nondetrital Fe) to total Fe is remarkably constant (49-58%) for all the sample groups, regardless of the degree of Mn mineralization. Factor analyses indicate various mixtures of two dominant components: hydrothermal Mn oxide for the stratabound Mn and detrital aluminosilicate for the Mn-cemented sandstone; and two minor components, hydrothermal Fe oxyhydroxide and biocarbonate/biosilica. Our conceptual model shows that Mn mineralization was produced by hydrothermal convection cells within arc volcanoes and sedimentary prisms that occur along the flanks and within calderas. The main source of hydrothermal fluid was seawater that penetrated through fractures, faults, and permeable volcanic edifices. The fluids were heated by magma, enriched in metals by leaching of basement rocks and sediments, and mixed with magmatic fluids and gases. Dikes and sills may have been another source of heat that drove small-scale circulation within sedimentary prisms.

The Amorphous Composition of Three Mudstone Samples from Gale Crater: Implications for Weathering and Diagenetic Processes on Mars

NASA Technical Reports Server (NTRS)

Achilles, C. N.; Downs, R. T.; Rampe, E. B.; Morris, R. V.; Bristow, T. F.; Ming, D. W.; Blake, D. F.; Vaniman, D. T.; Morrison, S. M.; Sutter, B.;

Highly efficient one-step synthesis of carbon encapsulated nanocrystals by the oxidation of metal π-complexes

NASA Astrophysics Data System (ADS)

Liu, Boyang; Shao, Yingfeng; Xiang, Xin; Zhang, Fuhua; Yan, Shengchang; Li, Wenge

2017-08-01

Various carbon encapsulated nanocrystals, including MnS and MnO, Cr2O3, MoO2, Fe7S8 and Fe3O4, and ZrO2, are prepared in one step and in situ by a simple and highly efficient synthesis approach. The nanocrystals have an equiaxed morphology and a median size smaller than 30 nm. Tens and hundreds of these nanocrystals are entirely encapsulated by a wormlike amorphous carbon shell. The formation of a core-shell structure depends on the strongly exothermic reaction of metal π-complexes with ammonium persulfate in an autoclave at below 200 °C. During the oxidation process, the generated significant amounts of heat will destroy the molecular structure of the metal π-complex and cleave the ligands into small carbon fragments, which further transform into an amorphous carbon shell. The central metal atoms are oxidized to metal oxide/sulfide nanocrystals. The formation of a core-shell structure is independent of the numbers of ligands and carbon atoms as well as the metal types, implying that any metal π-complex can serve as a precursor and that various carbon encapsulated nanocrystals can be synthesized by this method.

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Sungjin; Mativenga, Mallory; Kim, Youngoo

2014-08-04

We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectronmore » spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.« less

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration.

PubMed

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-11-04

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses.

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

NASA Astrophysics Data System (ADS)

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

2016-05-01

Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states.

PubMed

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

2016-05-27

Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

Core-shell CoFe2O4@Co-Fe-Bi nanoarray: a surface-amorphization water oxidation catalyst operating at near-neutral pH.

PubMed

Ji, Xuqiang; Hao, Shuai; Qu, Fengli; Liu, Jingquan; Du, Gu; Asiri, Abdullah M; Chen, Liang; Sun, Xuping

2017-06-14

The exploration of high-performance and earth-abundant water oxidation catalysts operating under mild conditions is highly attractive and challenging. In this communication, core-shell CoFe 2 O 4 @Co-Fe-Bi nanoarray on carbon cloth (CoFe 2 O 4 @Co-Fe-Bi/CC) was successfully fabricated by in situ surface amorphization of CoFe 2 O 4 nanoarray on CC (CoFe 2 O 4 /CC). As a 3D water oxidation electrode, CoFe 2 O 4 @Co-Fe-Bi/CC shows outstanding activity with an overpotential of 460 mV to drive a geometrical catalytic current density of 10 mA cm -2 in 0.1 M potassium borate (pH 9.2). Notably, it also demonstrates superior long-term durability for at least 20 h with 96% Faradic efficiency. Density functional theory calculations indicate that the conversion from OOH* to O 2 is the rate-limiting step and the high water oxidation activity of CoFe 2 O 4 @Co-Fe-Bi/CC is associated with the lower free energy of 1.84 eV on a Co-Fe-Bi shell.

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

PubMed Central

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-01-01

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses. PMID:27812035

GeO2 Thin Film Deposition on Graphene Oxide by the Hydrogen Peroxide Route: Evaluation for Lithium-Ion Battery Anode.

PubMed

Medvedev, Alexander G; Mikhaylov, Alexey A; Grishanov, Dmitry A; Yu, Denis Y W; Gun, Jenny; Sladkevich, Sergey; Lev, Ovadia; Prikhodchenko, Petr V

2017-03-15

A peroxogermanate thin film was deposited in high yield at room temperature on graphene oxide (GO) from peroxogermanate sols. The deposition of the peroxo-precursor onto GO and the transformations to amorphous GeO 2 , crystalline tetragonal GeO 2 , and then to cubic elemental germanium were followed by electron microscopy, XRD, and XPS. All of these transformations are influenced by the GO support. The initial deposition is explained in view of the sol composition and the presence of GO, and the different thermal transformations are explained by reactions with the graphene support acting as a reducing agent. As a test case, the evaluation of the different materials as lithium ion battery anodes was carried out revealing that the best performance is obtained by amorphous germanium oxide@GO with >1000 mAh g -1 at 250 mA g -1 (between 0 and 2.5 V vs Li/Li + cathode), despite the fact that the material contained only 51 wt % germanium. This is the first demonstration of the peroxide route to produce peroxogermanate thin films and thereby supported germanium and germanium oxide coatings. The advantages of the process over alternative methodologies are discussed.

Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.

PubMed

Wang, Jian-Xun; Hyung, Gun Woo; Li, Zhao-Hui; Son, Sung-Yong; Kwon, Sang Jik; Kim, Young Kwan; Cho, Eou Sik

2012-07-01

In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).

Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Jeong, Chan-Yong; Kim, Hee-Joong; Hong, Sae-Young; Song, Sang-Hun; Kwon, Hyuck-In

2017-08-01

In this study, we show that the two-stage unified stretched-exponential model can more exactly describe the time-dependence of threshold voltage shift (ΔV TH) under long-term positive-bias-stresses compared to the traditional stretched-exponential model in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). ΔV TH is mainly dominated by electron trapping at short stress times, and the contribution of trap state generation becomes significant with an increase in the stress time. The two-stage unified stretched-exponential model can provide useful information not only for evaluating the long-term electrical stability and lifetime of the a-IGZO TFT but also for understanding the stress-induced degradation mechanism in a-IGZO TFTs.

Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-raymore » photon spectroscopy and atomic force microscopy.« less

Efficient production of ultrapure manganese oxides via electrodeposition.

PubMed

Cheney, Marcos A; Joo, Sang Woo; Banerjee, Arghya; Min, Bong-Ki

2012-08-01

A new process for the production of electrolytic amorphous nanomanganese oxides (EAMD) with uniform size and morphology is described. EAMD are produced for the first time by cathodic deposition from a basic aqueous solution of potassium permanganate at a constant temperature of 16°C. The synthesized materials are characterized by XRD, SEM, TEM, and HRTEM. The materials produced at 5.0 V at constant temperature are amorphous with homogeneous size and morphology with an average particle size around 20 nm, which appears to be much lesser than the previously reported anodic EAMD. A potentiostatic electrodeposition with much lesser deposition rate (with respect to previously reported anodic depositions) is considered to be the reason behind the very low and homogenous particle size distribution due to the lesser agglomeration of our as-synthesized nanoparticles. Copyright © 2012 Elsevier Inc. All rights reserved.

Optimizing amorphous indium zinc oxide film growth for low residual stress and high electrical conductivity

NASA Astrophysics Data System (ADS)

Kumar, Mukesh; Sigdel, A. K.; Gennett, T.; Berry, J. J.; Perkins, J. D.; Ginley, D. S.; Packard, C. E.

2013-10-01

With recent advances in flexible electronics, there is a growing need for transparent conductors with optimum conductivity tailored to the application and nearly zero residual stress to ensure mechanical reliability. Within amorphous transparent conducting oxide (TCO) systems, a variety of sputter growth parameters have been shown to separately impact film stress and optoelectronic properties due to the complex nature of the deposition process. We apply a statistical design of experiments (DOE) approach to identify growth parameter-material property relationships in amorphous indium zinc oxide (a-IZO) thin films and observed large, compressive residual stresses in films grown under conditions typically used for the deposition of highly conductive samples. Power, growth pressure, oxygen partial pressure, and RF power ratio (RF/(RF + DC)) were varied according to a full-factorial test matrix and each film was characterized. The resulting regression model and analysis of variance (ANOVA) revealed significant contributions to the residual stress from individual growth parameters as well as interactions of different growth parameters, but no conditions were found within the initial growth space that simultaneously produced low residual stress and high electrical conductivity. Extrapolation of the model results to lower oxygen partial pressures, combined with prior knowledge of conductivity-growth parameter relationships in the IZO system, allowed the selection of two promising growth conditions that were both empirically verified to achieve nearly zero residual stress and electrical conductivities >1480 S/cm. This work shows that a-IZO can be simultaneously optimized for high conductivity and low residual stress.

Alkali oxide-tantalum oxide and alkali oxide-niobium oxide ionic conductors

NASA Technical Reports Server (NTRS)

Roth, R. S.; Parker, H. S.; Brower, W. S.; Minor, D.

1974-01-01

A search was made for new cationic conducting phases in alkali-tantalate and niobate systems. The phase equilibrium diagrams were constructed for the six binary systems Nb2O5-LiNbO3, Nb2O5-NaNbO3, Nb2O5-KNbO3, Ta2O5-NaTaO3, Ta2O5-LiTaO3, and Ta2O5-KTaO3. Various other binary and ternary systems were also examined. Pellets of nineteen phases were evaluated (by the sponsoring agency) by dielectric loss measurements. Attempts were made to grow large crystals of eight different phases. The system Ta2O5-KTaO3 contains at least three phases which showed peaks in dielectric loss vs. temperature. All three contain structures related to the tungsten bronzes with alkali ions in non-stoichiometric crystallographic positions.

Dielectric properties of glassy disaccharides for electromagnetic interference shielding application

NASA Astrophysics Data System (ADS)

Wlodarczyk, P.; Hawelek, L.; Paluch, M.; Wlodarczyk, A.; Wojnarowska, Z.; Kolano-Burian, A.

2015-11-01

Three amorphous disaccharides (sucrose, trehalose, and lactulose) and their mixtures were studied in order to evaluate their ability to absorb a high frequency (>1 MHz) electromagnetic wave. The materials were characterized by a dielectric loss tangent. It was found out that the highest tan(δ) value is observed in pure amorphous sucrose (tan(δ) = 0.17 at f = 1 MHz at T = 293 K). Moreover, the best Tg/tan(δ) ratio is observed in binary mixtures of sucrose and trehalose. A high glass transition temperature is advantageous as it increases operational temperatures of the material. The high tangent delta in microwave frequencies of sugars is connected with the mobility of sugar groups (possibly -CH2OH). The energy of the electromagnetic wave is converted into rotational movements of side groups and in consequence it is dissipated in the form of heat. It was proven that the polar low molecular glasses such as sugars may form dielectric components of composite microwave absorbers.

Low-temperature crystallization of silicate dust in circumstellar disks.

PubMed

Molster, F J; Yamamura, I; Waters, L B; Tielens, A G; de Graauw, T; de Jong, T; de Koter, A; Malfait, K; van den Ancker, M E; van Winckel, H; Voors, R H; Waelkens, C

1999-10-07

Silicate dust in the interstellar medium is observed to be amorphous, yet silicate dust in comets and interplanetary dust particles is sometimes partially crystalline. The dust in disks that are thought to be forming planets around some young stars also appears to be partially crystalline. These observations suggest that as the dust goes from the precursor clouds to a planetary system, it must undergo some processing, but the nature and extent of this processing remain unknown. Here we report observations of highly crystalline silicate dust in the disks surrounding binary red-giant stars. The dust was created in amorphous form in the outer atmospheres of the red giants, and therefore must be processed in the disks to become crystalline. The temperatures in these disks are too low for the grains to anneal; therefore, some low-temperature process must be responsible. As the physical properties of the disks around young stars and red giants are similar, our results suggest that low-temperature crystallization of silicate grains also can occur in protoplanetary systems.

Antisolvent Recrystallization Strategy to Screen Appropriate Carriers to Stabilize Filgotinib Amorphous Solid Dispersions.

PubMed

Ren, Fuzheng; Sun, Hanjing; Cui, Lin; Si, Yike; Chen, Ning; Ren, Guobin; Jing, Qiufang

2018-06-01

Drugs in amorphous solid dispersions (ASDs) are highly dispersed in hydrophilic polymeric carriers, which also help to restrain recrystallization and stabilize the ASDs. In this study, microscopic observation after antisolvent recrystallization was developed as a rapid screening method to select appropriate polymers for the initial design filgotinib (FTN) ASDs. Using solvent evaporation, FTN ASDs with the polymers were prepared, and accelerated experimentation validated this screening method. Fourier-transform infrared spectroscopy, Raman scattering, and nuclear magnetic resonance revealed hydrogen-bonding formation in the drug-polymer binary system, which was critical for ASDs stabilization. A Flory-Huggins interaction parameter and water sorption isotherms were applied to evaluate the strength of the interaction between FTN and the polymers. The dissolution rate was also significantly improved by ASDs formulation, and the presence of the polymers exerted solubilization effects. These results suggested the efficacy of this screening method as a preliminary tool for polymer selection in ASDs design. Copyright © 2018 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Amorphous TiO2 Shells: A Vital Elastic Buffering Layer on Silicon Nanoparticles for High-Performance and Safe Lithium Storage.

PubMed

Yang, Jianping; Wang, Yunxiao; Li, Wei; Wang, Lianjun; Fan, Yuchi; Jiang, Wan; Luo, Wei; Wang, Yang; Kong, Biao; Selomulya, Cordelia; Liu, Hua Kun; Dou, Shi Xue; Zhao, Dongyuan

2017-12-01

Smart surface coatings of silicon (Si) nanoparticles are shown to be good examples for dramatically improving the cyclability of lithium-ion batteries. Most coating materials, however, face significant challenges, including a low initial Coulombic efficiency, tedious processing, and safety assessment. In this study, a facile sol-gel strategy is demonstrated to synthesize commercial Si nanoparticles encapsulated by amorphous titanium oxide (TiO 2 ), with core-shell structures, which show greatly superior electrochemical performance and high-safety lithium storage. The amorphous TiO 2 shell (≈3 nm) shows elastic behavior during lithium discharging and charging processes, maintaining high structural integrity. Interestingly, it is found that the amorphous TiO 2 shells offer superior buffering properties compared to crystalline TiO 2 layers for unprecedented cycling stability. Moreover, accelerating rate calorimetry testing reveals that the TiO 2 -encapsulated Si nanoparticles are safer than conventional carbon-coated Si-based anodes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method for making fine and ultrafine spherical particles of zirconium titanate and other mixed metal oxide systems

DOEpatents

Hu, Michael Z.

2006-05-23

Disclosed is a method for making amorphous spherical particles of zirconium titanate and crystalline spherical particles of zirconium titanate comprising the steps of mixing an aqueous solution of zirconium salt and an aqueous solution of titanium salt into a mixed solution having equal moles of zirconium and titanium and having a total salt concentration in the range from 0.01 M to about 0.5 M. A stearic dispersant and an organic solvent is added to the mixed salt solution, subjecting the zirconium salt and the titanium salt in the mixed solution to a coprecipitation reaction forming a solution containing amorphous spherical particles of zirconium titanate wherein the volume ratio of the organic solvent to aqueous part is in the range from 1 to 5. The solution of amorphous spherical particles is incubated in an oven at a temperature .ltoreq.100.degree. C. for a period of time .ltoreq.24 hours converting the amorphous particles to fine or ultrafine crystalline spherical particles of zirconium titanate.

Understanding the Structure of High-K Gate Oxides - Oral Presentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Andre

2015-08-25

Hafnium Oxide (HfO 2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO 2 thin films which hasn’t been done with the technique of this study. In this study, two HfO 2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer.more » Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO 2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO 2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO 2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.« less

Nanoscale Au-In alloy-oxide core-shell particles as electrocatalysts for efficient hydroquinone detection

DOE PAGES

Sutter, E.; Tong, X.; Medina-Plaza, C.; ...

2015-10-09

The presence of hydroquinone (HQ), a phenol ubiquitous in nature and widely used in industry, needs to be monitored because of its toxicity to the environment. Here we demonstrate efficient detection of HQ using simple, fast, and noninvasive electrochemical measurements on indium tin oxide (ITO) electrodes modified with nanoparticles comprising bimetallic Au–In cores and mixed Au–In oxide shells. Whereas bare ITO electrodes show very low activity for the detection of HQ, their modification with Au–In core–shell nanoparticles induces a pronounced shift of the oxidation peak to lower potentials, i.e., facilitated oxidation. The response of the different electrodes was correlated withmore » the initial composition of the bimetallic nanoparticle cores, which in turn determined the amount of Au and In stabilized on the surface of the amorphous Au–In oxide shells available for the electrochemical reaction. While adding core–shell nanostructures with different compositions of the alloy core facilitates the electrocatalytic (reduction-) oxidation of HQ, the activity is highest for particles with AuIn cores (i.e., a Au:In ratio of 1). This optimal system is found to follow a single pathway, the two-electron oxidation of the quinone–hydroquinone couple, which gives rise to high oxidation peaks and is most effective in facilitating the electrode-to-analyte charge transfer and thus detection. The limits of detection (LOD) decreased when increasing the amount of Au exposed on the surface of the amorphous Au–In oxide shells. As a result the LODs were in the range of 10 –5 – 10 –6 M and were lower than those obtained using bulk Au.« less

Graphene as a transparent electrode for amorphous silicon-based solar cells

NASA Astrophysics Data System (ADS)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-06-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Measurement of a superconducting energy gap in a homogeneously amorphous insulator.

PubMed

Sherman, D; Kopnov, G; Shahar, D; Frydman, A

2012-04-27

We present tunneling spectroscopy measurements that directly reveal the existence of a superconducting gap in the insulating state of homogenously disordered amorphous indium oxide films. Two films on both sides of the disorder induced superconductor to insulator transition show the same energy gap scale. This energy gap persists up to relatively high magnetic fields and is observed across the magnetoresistance peak typical of disordered superconductors. The results provide useful information for understanding the nature of the insulating state in the disorder induced superconductor to insulator transition.

Direct observation of MoO 2 crystal growth from amorphous MoO 3 film

NASA Astrophysics Data System (ADS)

Nina, Kenji; Kimura, Yuki; Yokoyama, Kaori; Kido, Osamu; Binyo, Gong; Kaito, Chihiro

2008-08-01

The formation process of MoO 2 crystal from amorphous MoO 3 film has been imaged by in situ observation with a transmission electron microscope. Selective growth of flower-shaped MoO 2 crystals by heating above 673 K in vacuum was directly observed. Since the MoO 2 crystal has metallic conductivity of the order of indium oxide film containing tin (ITO film), the thin film growth of the MoO 2 phase has been discussed on the basis of a new substitute for ITO film.

Indium Gallium Zinc Oxide: Phase Formation and Crystallization Kinetics during Millisecond Laser Spike Annealing

NASA Astrophysics Data System (ADS)

Lynch, David Michael

Flat panel displays have become ubiquitous, enabling products from highresolution cell phones to ultra-large television panels. Amorphous silicon (a- Si) has been the industry workhorse as the active semiconductor in pixeladdressing transistors due to its uniformity and low production costs. However, a-Si can no longer support larger and higher-resolution displays, and new materials with higher electron mobilities are required. Amorphous indium gallium zinc oxide (a-IGZO), which retains the uniformity and low cost of amorphous films, has emerged as a viable candidate due to its enhanced transport properties. However, a-IGZO devices suffer from long-term instabilities--the origins of which are not yet fully understood--causing a drift in switching characteristics over time and affecting product lifetime. More recently, devices fabricated from textured nanocrystalline IGZO, termed c-axis aligned crystalline (CAAC), have demonstrated superior stability. Unfortunately, little is known regarding the phase formation and crystallization kinetics of either the CAAC structure or in the broader ternary IGZO system. Crystallinity and texture of CAAC IGZO films deposited by RF reactive sputtering were studied and characterized over a wide range of deposition conditions. The characteristic CAAC (0 0 9) peak at 2theta = 30° was observed by X-ray diffraction, and nanocrystalline domain texture was determined using a general area detector diffraction system (GADDS). Highly ordered CAAC films were obtained near the InGaZnO4 composition at a substrate temperature of 310 °C and in a 10%O2/90% Ar sputtering ambient. High-resolution transmission electron microscopy (HRTEM) confirmed the formation of CAAC and identified 2-3 nm domains coherently aligned over large ranges extending beyond the field of view (15 nm x 15 nm). Cross-section HRTEM of the CAAC/substrate interface shows formation of an initially disordered IGZO layer prior to CAAC formation, suggesting a nucleation mechanism similar to ZnO thin films. A classical nucleation and growth model is proposed and compared to alternative models proposed in literature. Extending this study of CAAC IGZO, the formation and growth of crystalline IGZO over a wide composition range and processing conditions were explored. IGZO itself is one composition of a class of homologous structures in the pseudo-binary InGaO3(ZnO)m system. For integer m, the equilibrium structure is known and well-characterized; however, for non-integer m, disorder must exist and the kinetics of the structural development remain almost completely unknown. A high-throughput (combinatorial) approach utilizing co-sputter deposition, millisecond timescale thermal gradient laser annealing, and spatially-resolved characterization using microbeam wide-angle X-ray scattering was used to probe the structural evolution as a function of temperature, time, and composition. As-deposited films were amorphous in the InGaO3- rich composition range, becoming crystalline (wurtzite) with increasing ZnO content. Under millisecond heating, films evolved toward the equilibrium layered structure consisting of nearly pure In2O3 layers with (Ga, Zn)Ox interlayers. Composition deviations (non-integer m) are discussed within a model of cationic disorder in both the In2O3 layers and the (Ga, Zn)O x layers. Crystal-tocrystal transformations in the high-ZnO region are discussed within the context of a new growth model for these homologous structures. This deeper understanding of the nature of crystalline IGZO will help to enable the successful implementation of CAAC IGZO for high-performance display applications.

Microgravity

NASA Image and Video Library

2001-01-24

A 3 mm-diameter droplet of aluminum oxide, heated to 2371 deg. C (4,300 deg. F), is suspended in midair by six acoustic transducers. A gas jet (from the nozzle below the drop) helps position the drop for study, and a 500-watt laser melts the sample. Glasses made from aluminum oxide are highly promising for optical transmission and other properties. They are also highly reactive when molten. Containerless processing allows studies of how to form amorphous (glassy) rather than crystalline metal oxides. Credit: Bill Jellison, Containerless Research, Inc.

Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends

DTIC Science & Technology

2015-02-25

all the In 2 O 3 : x %PVP blends, where the polymer chains disrupt oxide lattice forma - tion at the nanoscale grain level rather than at the atomic...oxidative stability. [ 51,52 ] This result can be qualitatively ascribed to the endothermic M–O–M lattice forma - tion acting as heat absorber and the ultra... Irie , M. Komiyama , H. Yui , Supramol. Sci. 1998 , 5 , 411 . [40] D. B. Buchholz , J. Liu , T. J. Marks , M. Zhang , R. P. Chang

Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

PubMed

Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

2016-05-04

Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures.

Low-Temperature Synthesis of Hierarchical Amorphous Basic Nickel Carbonate Particles for Water Oxidation Catalysis.

PubMed

Yang, Yisu; Liang, Fengli; Li, Mengran; Rufford, Thomas E; Zhou, Wei; Zhu, Zhonghua

2015-07-08

Amorphous nickel carbonate particles are catalysts for the oxygen evolution reaction (OER), which plays a critical role in the electrochemical splitting of water. The amorphous nickel carbonate particles can be prepared at a temperature as low as 60 °C by an evaporation-induced precipitation (EIP) method. The products feature hierarchical pore structures. The mass-normalized activity of the catalysts, measured at an overpotential of 0.35 V, was 55.1 A g(-1) , with a Tafel slope of only 60 mV dec(-1) . This catalytic activity is superior to the performance of crystalline NiOx particles and β-Ni(OH)2 particles, and compares favorably to state-of-the-art RuO2 catalysts. The activity of the amorphous nickel carbonate is remarkably stable during a 10 000 s chronoamperometry test. Further optimization of synthesis parameters reveals that the amorphous structure can be tuned by adjusting the H2 O/Ni ratio in the precursor mixture. These results suggest the potential application of easily prepared hierarchical basic nickel carbonate particles as cheap and robust OER catalysts with high activity. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

[Study on high temperature oxidation of Ni-Cr ceramic alloys. Effects of Cr and Mo].

PubMed

Mizutani, M

1990-03-01

The effects of Cr and Mo addition to Ni-Cr alloys on high temperature oxidation were investigated. The alloys were prepared with the composition of Cr ranging from 5 to 40 wt%. Also 2, 4 and 9 wt% of Mo was added to both Ni-5% Cr and Ni-20% Cr binary alloys. The alloys were heated at 800 degrees C, 900 degrees C and 1000 degrees C for 15 minutes in air, and the weight change after heat treatment was measured by electric automatic balance. The weight change during heating was measured by thermogravimetric measurement (TG). The products after heat treatment were characterized by X-ray diffraction and scanning electron microscopy (SEM). The results are summarized as follows: The Ni-Cr binary alloys were classified into three types of Cr ranging from 5 to 20 wt%, Cr 25% and Cr from 30 wt% to 40 wt% according to the weight gains with oxidation. In the case of the more than 25 wt% Cr content of the Ni-Cr binary alloys, the weight gain was extremely low and the heating temperature effects on the weight change were also small. X-ray diffraction study showed that NiO, NiCr2O4 and Cr2O3 formed on the surface of the Ni-Cr binary alloys whose composition of Cr ranged from 5 to 25 wt%, whereas NiO and NiCr2O4 rarely formed on the Ni-Cr binary alloys whose composition of Cr ranged from 30 to 40 wt%. This suggests that the formation of Cr2O3 prevents the formation of NiO on the alloy with a high Cr content. The weight gain of the Ni-Cr-Mo ternary alloys was smaller than that of the Ni-Cr binary alloys without Mo, and the temperature effects on the weight gain of the Ni-Cr-Mo ternary alloys were different for each Cr content. However, the effect of the amounts of Mo was small. NiO, NiCr2O4, Cr2O3 and MoO2 were identified by X-ray diffraction on the surface of the Ni-Cr-Mo ternary alloys. According to the SEM observation, it seems that NiO was formed at the outermost layer, both NiCr2O4 and Cr2O3 at the inside layer, and MoO2 at the innermost layer. The formation of both NiO and Cr2O3 on the Ni-Cr-Mo ternary alloys was restrained compared with that of the Ni-Cr binary alloys. However, the adhesion of oxides to the Ni-Cr-Mo ternary alloys was lower than that of the Ni-Cr binary alloys.

Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

NASA Astrophysics Data System (ADS)

Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

2017-12-01

This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

Laser-induced breakdown spectroscopy of light water reactor simulated used nuclear fuel: Main oxide phase

DOE PAGES

Campbell, Keri R.; Judge, Elizabeth J.; Barefield, James E.; ...

2017-04-22

We show the analysis of light water reactor simulated used nuclear fuel using laser-induced breakdown spectroscopy (LIBS) is explored using a simplified version of the main oxide phase. The main oxide phase consists of the actinides, lanthanides, and zirconium. The purpose of this study is to develop a rapid, quantitative technique for measuring zirconium in a uranium dioxide matrix without the need to dissolve the material. A second set of materials including cerium oxide is also analyzed to determine precision and limit of detection (LOD) using LIBS in a complex matrix. Two types of samples are used in this study:more » binary and ternary oxide pellets. The ternary oxide, (U,Zr,Ce)O 2 pellets used in this study are a simplified version the main oxide phase of used nuclear fuel. The binary oxides, (U,Ce)O 2 and (U,Zr)O 2 are also examined to determine spectral emission lines for Ce and Zr, potential spectral interferences with uranium and baseline LOD values for Ce and Zr in a UO 2 matrix. In the spectral range of 200 to 800 nm, 33 cerium lines and 25 zirconium lines were identified and shown to have linear correlation values (R 2) > 0.97 for both the binary and ternary oxides. The cerium LOD in the (U,Ce)O 2 matrix ranged from 0.34 to 1.08 wt% and 0.94 to 1.22 wt% in (U,Ce,Zr)O 2 for 33 of Ce emission lines. The zirconium limit of detection in the (U,Zr)O 2 matrix ranged from 0.84 to 1.15 wt% and 0.99 to 1.10 wt% in (U,Ce,Zr)O 2 for 25 Zr lines. Finally, the effect of multiple elements in the plasma and the impact on the LOD is discussed.« less

Oxide Based Transistor for Flexible Displays

DTIC Science & Technology

2014-09-15

thin film transistors (TFTs) for next generation display technologies. A detailed and comprehensive study was carried out to ascertain the process...Box 12211 Research Triangle Park, NC 27709-2211 Thin film transistors , flexible electronics, RF sputtering, Transparent amorphous oxide semiconductors...NC A&T and RTI, International investigated In free GaSnZnO (GSZO) material system, as the active channel in thin film transistors (TFTs) for next

1.55 Micrometer Sub-Micron Finger, Interdigitated MSM Photodetector Arrays with Low Dark Current

DTIC Science & Technology

2010-02-02

pf a- IGZO TFTs. IV. RF Characteristics of Room Temperature Deposited Indium Zinc Oxide Thin - Film Transistors Depletion-mode indium zinc...III. High Performance Indium Gallium Zinc Oxide Thin Film Transistors Fabricated On Polyethylene Terephthalate Substrates High-performance...amorphous (a-) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate (PET) substrates coated with indium

REM-containing silicate concentrates

NASA Astrophysics Data System (ADS)

Pavlov, V. F.; Shabanova, O. V.; Pavlov, I. V.; Pavlov, M. V.; Shabanov, A. V.

2016-01-01

A new method of advanced complex processing of ores containing rare-earth elements (REE) is proposed to obtain porous X-ray amorphous aluminosilicate material with a stable chemical composition which concentrates oxides of rare-earth metals (REM). The ferromanganese oxide ores of Chuktukon deposit (Krasnoyarsk Region, RF) were used for the experiment. The obtained aluminosilicate material is appropriate for treatment with 5 - 15% solutions of mineral acids to leach REM.

The Effect of Shock on the Amorphous Component in Altered Basalt

NASA Technical Reports Server (NTRS)

Eckley, S. A.; Wright, S. P.; Rampe, E. B.; Niles, P. B.

2017-01-01

Investigation of the geochemical and mineralogical composition of the Martian surface provides insight into the geologic history of the predominantly basaltic crust. The Chemistry and Mineralogy (CheMin) instrument onboard the Curiosity rover has returned the first X-Ray diffraction data from the Martian surface. However, large proportions (27 +/- 14 with some estimates as high as 50 weight percentage) of an amorphous component have been reported. As a remedy to this problem, mass balance equations using geochemistry, volatile chemistry, and mineralogy have been employed to constrain the geochemistry of the amorphous component. However, "the nature and number of amorphous phases that constitute the amorphous component is not unequivocally known". Multiple hypotheses have been proposed to explain the origin of this amorphous component: Allophane (Al2O); Basaltic glass (Volcanic and impact); Palagonite (Altered basaltic glass); Hisingerite (Fe (sup 3 plus)-bearing phyllosilicate); S/Cl-rich component (sulfates and/or akaganeite); Nanophase ferric oxide component (npOx). Establishing a multi-phase amorphous component from a basaltic precursor that has undergone physical and chemical weathering within geochemical constraints is of paramount importance to better understand the composition of a large portion of the Martian surface (up to 50 weight percentage). Shocked basalts from Lonar Crater in India are valuable analogs for the Martian surface because it is a well-preserved impact crater in a basaltic target. Having undergone pre- and post-shock aqueous alteration, these rocks provide crucial data regarding the effect of shock on the amorphous component in altered basalt. By conducting mass balance equations similar to what has been performed for Gale crater materials, we attempt to calculate the geochemistry of the amorphous component in altered basalts ranging from unshocked to Class 5 (Table 1). This has the potential to reveal the nature and origin (i.e. primary igneous, shock metamorphic, and/or aqueous alteration occurring before or after the impact event) of the amorphous component in shocked basalt with the goal of unravelling the history of the Martian surface.

High temperature regenerative H.sub.2 S sorbents

NASA Technical Reports Server (NTRS)

Flytani-Stephanopoulos, Maria (Inventor); Gavalas, George R. (Inventor); Tamhankar, Satish S. (Inventor)

1988-01-01

Efficient, regenerable sorbents for removal of H.sub.2 S from high temperature gas streams comprise porous, high surface area particles. A first class of sorbents comprise a thin film of binary oxides that form a eutectic at the temperature of the gas stream coated onto a porous, high surface area refractory support. The binary oxides are a mixture of a Group VB or VIB metal oxide with a Group IB, IIB or VIII metal oxide such as a film of V-Zn-O, V-Cu-O, Cu-Mo-O, Zn-Mo-O or Fe-Mo-O coated on an alumina support. A second class of sorbents consist of particles of unsupported mixed oxides in the form of highly dispersed solid solutions of solid compounds characterized by small crystallite size, high porosity and relatively high surface area. The mixed oxide sorbents contain one Group IB, IIB or VIIB metal oxide such as copper, zinc or manganese and one or more oxides of Groups IIIA, VIB or VII such as aluminum, iron or molybdenum. The presence of iron or aluminum maintains the Group IB, IIB or VIIB metal in its oxidized state. Presence of molybdenum results in eutectic formation at sulfidation temperature and improves the efficiency of the sorbent.

A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si1- x O2 Gate dielectric and improved electrical and hysteresis performance

NASA Astrophysics Data System (ADS)

Hung, Chien-Hsiung; Wang, Shui-Jinn; Liu, Pang-Yi; Wu, Chien-Hung; Wu, Nai-Sheng; Yan, Hao-Ping; Lin, Tseng-Hsing

2017-04-01

The use of co-sputtered zirconium silicon oxide (Zr x Si1- x O2) gate dielectrics to improve the gate controllability of amorphous indium gallium zinc oxide (α-IGZO) thin-film transistors (TFTs) through a room-temperature fabrication process is proposed and demonstrated. With the sputtering power of the SiO2 target in the range of 0-150 W and with that of the ZrO2 target kept at 100 W, a dielectric constant ranging from approximately 28.1 to 7.8 is obtained. The poly-structure formation immunity of the Zr x Si1- x O2 dielectrics, reduction of the interface trap density suppression, and gate leakage current are examined. Our experimental results reveal that the Zr0.85Si0.15O2 gate dielectric can lead to significantly improved TFT subthreshold swing performance (103 mV/dec) and field effect mobility (33.76 cm2 V-1 s-1).

Suppression of persistent photo-conductance in solution-processed amorphous oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Lee, Minkyung; Kim, Minho; Jo, Jeong-Wan; Park, Sung Kyu; Kim, Yong-Hoon

2018-01-01

This study offers a combinatorial approach for suppressing the persistent photo-conductance (PPC) characteristic in solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) in order to achieve rapid photo-recovery. Various analyses were used to examine the photo-instability of indium-gallium-zinc-oxide (IGZO) TFTs including negative-bias-illumination-stress (NBIS) and transient photo-response behaviors. It was found that the indium ratio in metallic components had a significant impact on their PPC and photo-recovery characteristics. In particular, when the indium ratio was low (51.5%), the PPC characteristic was significantly suppressed and achieving rapid photo-recovery was possible without significantly affecting the electrical performance of AOSs. These results imply that the optimization of the indium composition ratio may allow achieving highly photo-stable and near PPC-free characteristics while maintaining high electrical performance of AOSs. It is considered that the negligible PPC behavior and rapid photo-recovery observed in IGZO TFTs with a lower indium composition are attributed to the less activation energy required for the neutralization of ionized oxygen vacancies.

Structure and Reactivity of X-ray Amorphous Uranyl Peroxide, U 2O 7

DOE PAGES

Odoh, Samuel O.; Shamblin, Jacob; Colla, Christopher A.; ...

2016-03-14

Recent accidents resulting in worker injury and radioactive contamination occurred due to pressurization of uranium yellowcake drums produced in the western USA. The drums contained an unexpected X-ray amorphous reactive form of uranium oxide, U 2O7. Heating hydrated uranyl peroxides produced during in situ mining unintentionally produced U 2O 7. It is a hygroscopic anhydrous uranyl peroxide that reacts rapidly with water to release O 2 gas and form metaschoepite, a uranyl-oxide hydrate. Quantum chemical calculations indicate that the most stable U 2O 7 conformer consists of two bent (UO 2) 2+ uranyl ions bridged by a peroxide group bidentatemore » and parallel to each uranyl ion, and a μ2-O atom, resulting in charge neutrality. A pair distribution function from neutron total scattering supports this structural model. The reactivity of U 2O 7 in water and with water in air is much higher than other uranium oxides, and this can be both hazardous and potentially advantageous in the nuclear fuel cycle.« less

Enhanced electrochemical performance of amorphous carbon nanotube-manganese-di-oxide-poly-pyrrole ternary nanohybrid

NASA Astrophysics Data System (ADS)

Pahari, D.; Das, N. S.; Das, B.; Howli, P.; Chattopadhyay, K. K.; Banerjee, D.

2017-12-01

Amorphous carbon nanotubes (a-CNTs) manganese di oxide (MnO2)-poly pyrrole (PPy) ternary nanocomposites have been synthesized by a simple chemical route. The as prepared samples have been characterized with different characterization tools that include field emission scanning and high resolution transmission electron microscopy, Raman, Fourier transformed infrared as well as UV-Vis spectroscopy. The electrochemical performance of all the as prepared pure and hybrid samples have been studied in detail. It has been seen that the ternary hybrid shows efficient electrochemical performance with high value of specific capacitance with good stability even up to 2000 cycles. The superior performance of the hybrid samples can be attributed to the strong synergistic effect between the components resulting electron shuttling along PPy main chains and inter-chain raising built-in continuous conductive network. The ternary composite approach offers an effective solution to enhance the device performance of metal-oxide based supercapacitors for long cycling applications. These studies can well speculate the existence of another supercapacitor hybrid for the use in environment friendly electrode and thus a pollution free nature.

Stabilization of Titanium Dioxide Nanoparticles at the Surface of Carbon Nanomaterials Promoted by Microwave Heating.

PubMed

Zhang, Rui; Santangelo, Saveria; Fazio, Enza; Neri, Fortunato; D'Arienzo, Massimiliano; Morazzoni, Franca; Zhang, Yihe; Pinna, Nicola; Russo, Patrícia A

2015-10-12

TiO2 is frequently combined with carbon materials, such as reduced graphene oxide (RGO), to produce composites with improved properties, for example for photocatalytic applications. It is shown that heating conditions significantly affect the interface and photocatalytic properties of TiO2 @C, and that microwave irradiation can be advantageous for the synthesis of carbon-based materials. Composites of TiO2 with RGO or amorphous carbon were prepared from reaction of titanium isopropoxide with benzyl alcohol. During the synthesis of the TiO2 nanoparticles, the carbon is involved in reactions that lead to the covalent attachment of the oxide, the extent of which depends on the carbon characteristics, heating rate, and mechanism. TiO2 is more efficiently stabilized at the surface of RGO than amorphous carbon. Rapid heating of the reaction mixture results in a stronger coupling between the nanoparticles and carbon, more uniform coatings, and smaller particles with narrower size distributions. The more efficient attachment of the oxide leads to better photocatalytic performance. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetic and thermal properties of amorphous TbFeCo alloy films

NASA Astrophysics Data System (ADS)

Wang, Ke; Dong, Shuo; Huang, Ya; Qiu, Yuzhen

2017-07-01

Amorphous TbFeCo material with perpendicular magnetic anisotropy is currently attracting more attention for potential applications in spintronic devices and logic memories. We systematically investigate magnetic, structural, thermal, optical and electrical properties of TbFeCo alloy films. It shows out-of-plane easy axis of the films turns into in-plane orientation after annealing. Significant increase in saturation magnetization in the temperature range between 400 and 450 °C is revealed by thermomagnetic measurements. The occurrence of crystallization and oxidation at high temperatures is confirmed by X-ray diffraction measurements. Pronounced changes in optical reflectance and sheet resistance are observed with temperature, in line with structural relaxation and change. The activation barriers for crystallization and oxidation are determined to be 1.01 eV and 0.83 eV, respectively, for FeCo-rich and Tb-rich samples. Better thermal stability against crystallization and oxidation is demonstrated in the FeCo-rich sample than the Tb-rich type. Our results provide some useful information for the alloy used in device fabrication.

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

PubMed Central

Hosono, Hideo; Toda, Yoshitake; Kamiya, Toshio; Watanabe, Satoru

2017-01-01

Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm2/(V · s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability. PMID:28028243

Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

NASA Astrophysics Data System (ADS)

Thanawala, Sachin

Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

Damage evolution of ion irradiated defected-fluorite La 2 Zr 2 O 7 epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Gigax, Jonathan G.; Shao, Lin

2017-05-01

Pyrochlore-structure oxides, A2B2O7, may exhibit remarkable radiation tolerance due to the ease with which they can accommodate disorder by transitioning to a defected fluorite structure. The mechanism of defect formation was explored by evaluating the radiation damage behavior of high quality epitaxial La2Zr2O7 thin films with the defected fluorite structure, irradiated with 1 MeV Zr+ at doses up to 10 displacements per atom (dpa). The level of film damage was evaluated as a function of dose by Rutherford backscattering spectrometry in the channeling geometry (RBS/c) and scanning transmission electron microscopy (STEM). At lower doses, the surface of the La2Zr2O7 filmmore » amorphized, and the amorphous fraction as a function of dose fit well to a stimulated amorphization model. As the dose increased, the surface amorphization slowed, and amorphization appeared at the interface. Even at a dose of 10 dpa, the core of the film remained crystalline, despite the prediction of amorphization from the model. To inform future ab initio simulations of La2Zr2O7, the bandgap of a thick La2Zr2O7 film was measured to be indirect at 4.96 eV, with a direct transition at 5.60 eV.« less

Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newby, Pascal J.; Institut Interdisciplinaire d'Innovation Technologique; Canut, Bruno

2013-07-07

In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first timemore » such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 Degree-Sign C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.« less

Damage evolution of ion irradiated defected-fluorite La 2 Zr 2 O 7 epitaxial thin films

DOE PAGES

Kaspar, Tiffany C.; Gigax, Jonathan G.; Shao, Lin; ...

2017-05-01

Pyrochlore-structure oxides, A 2B 2O 7, may exhibit remarkable radiation tolerance due to the ease with which they can accommodate disorder by transitioning to a defected fluorite structure. In this paper, the mechanism of defect formation was explored by evaluating the radiation damage behavior of high quality epitaxial La 2Zr 2O 7 thin films with the defected fluorite structure, irradiated with 1 MeV Zr + at doses up to 10 displacements per atom (dpa). The level of film damage was evaluated as a function of dose by Rutherford backscattering spectrometry in the channeling geometry (RBS/c) and scanning transmission electron microscopymore » (STEM). At lower doses, the surface of the La 2Zr 2O 7 film amorphized, and the amorphous fraction as a function of dose fit well to a stimulated amorphization model. As the dose increased, the surface amorphization slowed, and amorphization appeared at the interface. Even at a dose of 10 dpa, the core of the film remained crystalline, despite the prediction of amorphization from the model. To inform future ab initio simulations of La 2Zr 2O 7, the bandgap of a thick La 2Zr 2O 7 film was measured to be indirect at 4.96 eV, with a direct transition at 5.60 eV.« less

Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

NASA Astrophysics Data System (ADS)

Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

2014-11-01

We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

Amorphous Nickel-Cobalt-Borate Nanosheet Arrays for Efficient and Durable Water Oxidation Electrocatalysis under Near-Neutral Conditions.

PubMed

Chen, Lanlan; Ren, Xiang; Teng, Wanqing; Shi, Pengfei

2017-07-21

Electrolytic hydrogen generation needs earth-abundant oxygen evolution reaction electrocatalysts that perform efficiently at mild pH. Here, the development of amorphous nickel-cobalt-borate nanosheet arrays on macroporous nickel foam (NiCo-Bi/NF) as a 3D catalyst electrode for high-performance water oxidation in near-neutral media is reported. To drive a current density of 10 mA cm -2 , the resulting NiCo-Bi/NF demands an overpotential of only 430 mV in 0.1 m potassium borate (K-Bi, pH 9.2). Moreover, it also shows long-term electrochemical durability with maintenance of catalytic activity for 20 h, achieving a high turnover frequency of 0.21 s -1 at an overpotential of 550 mV. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Hsin-Cheng; Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw; Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan

In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology ismore » suitable for use in flexible displays.« less

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

NASA Astrophysics Data System (ADS)

Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

2017-09-01

A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

NASA Astrophysics Data System (ADS)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Wide-angle light-trapping electrode for photovoltaic cells.

PubMed

Omelyanovich, Mikhail M; Simovski, Constantin R

2017-10-01

In this Letter, we experimentally show that a submicron layer of a transparent conducting oxide that may serve a top electrode of a photovoltaic cell based on amorphous silicon when properly patterned by notches becomes an efficient light-trapping structure. This is so for amorphous silicon thin-film solar cells with properly chosen thicknesses of the active layers (p-i-n structure with optimal thicknesses of intrinsic and doped layers). The nanopatterned layer of transparent conducting oxide reduces both the light reflectance from the photovoltaic cell and transmittance through the photovoltaic layers for normal incidence and for all incidence angles. We explain the physical mechanism of our light-trapping effect, prove that this mechanism is realized in our structure, and show that the nanopatterning is achievable in a rather easy and affordable way that makes our method of solar cell enhancement attractive for industrial adaptations.

Bioactivity of gelatin coated magnetic iron oxide nanoparticles: in vitro evaluation.

PubMed

Gaihre, Babita; Khil, Myung Seob; Kang, Hyo Kyoung; Kim, Hak Yong

2009-02-01

Current research explores formation of bone like apatite on gelatin coated magnetic iron oxide nanoparticles (GIOPs) to evaluate the bioactivity of the material. The GIOPs were soaked in simulated body fluid (SBF) and the apatite formation on the surface was investigated in regular interval of time. Fourier transform-infrared (FT-IR) and x-ray diffraction spectroscopic (XRD) analyses were done to investigate the chemical changes and field emission-scanning electron microscopic (FE-SEM) analysis was done to investigate the morphological changes occurring on the surface of the GIOPs after soaking in different time intervals. The kinetic studies of the apatite growth in SBF suggest that initially calcium and phosphorous ions were deposited to the surface of the GIOPs from the SBF leading to formation of amorphous Ca/P particles. Later, after 9 days of the incubation the amorphous particles were fused to form needle and blade like crystalline structures of bone like apatite.

Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

PubMed

Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

2015-04-22

This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

NASA Astrophysics Data System (ADS)

Song, Aeran; Park, Hyun-Woo; Chung, Kwun-Bum; Rim, You Seung; Son, Kyoung Seok; Lim, Jun Hyung; Chu, Hye Yong

2017-12-01

The electrical properties of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin films were investigated after thermal annealing and plasma treatment under different gas conditions. The electrical resistivity of a-IGZO thin films post-treated in a hydrogen ambient were lower than those without treatment and those annealed in air, regardless of the methods used for both thermal annealing and plasma treatment. The electrical properties can be explained by the quantity of hydrogen incorporated into the samples and the changes in the electronic structure in terms of the chemical bonding states, the distribution of the near-conduction-band unoccupied states, and the band alignment. As a result, the carrier concentrations of the hydrogen treated a-IGZO thin films increased, while the mobility decreased, due to the increase in the oxygen vacancies from the occurrence of unoccupied states in both shallow and deep levels.

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flynn, Brendan T.; Oleksak, Richard P.; Thevuthasan, Suntharampillai

A method to modulate the Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. The interfacial chemistries that modulate barrier heights for the Pt/a-IGZO system were investigated using in-situ X-ray photoelectron spectroscopy. A significant reduction of indium, from In3+ to In0, occurs during deposition of Pt on to the a-IGZO surface in ultra-high vacuum. Post-annealing and controlling the background ambient O2 pressure allows tuning the degree of indium reduction and the corresponding Schottky barrier height between 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries atmore » Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metalsemiconductor field-effect transistors.« less

High-temperature stability of Au/Pd/Cu and Au/Pd(P)/Cu surface finishes

NASA Astrophysics Data System (ADS)

Ho, C. E.; Hsieh, W. Z.; Lee, P. T.; Huang, Y. H.; Kuo, T. T.

2018-03-01

Thermal reliability of Au/Pd/Cu and Au/Pd(4-6 wt.% P)/Cu trilayers in the isothermal annealing at 180 °C were investigated by X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), and transmission electron microscopy (TEM). The pure Pd film possessed a nanocrystalline structure with numerous grain boundaries, thereby facilitating the interdiffusion between Au and Cu. Out-diffusion of Cu through Pd and Au grain boundaries yielded a significant amount of Cu oxides (CuO and Cu2O) over the Au surface and gave rise to void formation in the Cu film. By contrast, the Pd(P) film was amorphous and served as a good diffusion barrier against Cu diffusion. The results of this study indicated that amorphous Pd(P) possessed better oxidation resistance and thermal reliability than crystalline Pd.

Nanosized amorphous calcium carbonate stabilized by poly(ethylene oxide)-b-poly(acrylic acid) block copolymers.

PubMed

Guillemet, Baptiste; Faatz, Michael; Gröhn, Franziska; Wegner, Gerhard; Gnanou, Yves

2006-02-14

Particles of amorphous calcium carbonate (ACC), formed in situ from calcium chloride by the slow release of carbon dioxide by alkaline hydrolysis of dimethyl carbonate in water, are stabilized against coalescence in the presence of very small amounts of double hydrophilic block copolymers (DHBCs) composed of poly(ethylene oxide) (PEO) and poly(acrylic acid) (PAA) blocks. Under optimized conditions, spherical particles of ACC with diameters less than 100 nm and narrow size distribution are obtained at a concentration of only 3 ppm of PEO-b-PAA as additive. Equivalent triblock or star DHBCs are compared to diblock copolymers. The results are interpreted assuming an interaction of the PAA blocks with the surface of the liquid droplets of the concentrated CaCO3 phase, formed by phase separation from the initially homogeneous reaction mixture. The adsorption layer of the block copolymer protects the liquid precursor of ACC from coalescence and/or coagulation.

Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

NASA Astrophysics Data System (ADS)

Jeong, Jaewook

2016-11-01

In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

NASA Astrophysics Data System (ADS)

Bubel, S.; Meyer, S.; Kunze, F.; Chabinyc, M. L.

2013-10-01

In low-temperature solution processed amorphous zinc oxide (a-ZnO) thin films, we show the thin film transistor (TFT) characteristics for the trap-filled limit (TFL), when the quasi Fermi energy exceeds the conduction band edge and all tail-states are filled. In order to apply gate fields that are high enough to reach the TFL, we use an ionic liquid tape gate. Performing capacitance voltage measurements to determine the accumulated charge during TFT operation, we find the TFL at biases higher than predicted by the electronic structure of crystalline ZnO. We conclude that the density of states in the conduction band of a-ZnO is higher than in its crystalline state. Furthermore, we find no indication of percolative transport in the conduction band but trap assisted transport in the tail-states of the band.