Electric measurements of PV heterojunction structures a-SiC/c-Si

NASA Astrophysics Data System (ADS)

Perný, Milan; Šály, Vladimír; Janíček, František; Mikolášek, Miroslav; Váry, Michal; Huran, Jozef

2018-01-01

Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

Natural cotton as precursor for the refractory boron carbide—a hydrothermal synthesis and characterization

NASA Astrophysics Data System (ADS)

Saritha Devi, H. V.; Swapna, M. S.; Raj, Vimal; Ambadas, G.; Sankararaman, S.

2018-01-01

Boron carbide (B4C) is an excellent covalent carbide that finds applications in industries and nuclear power plants. The present synthesis methods of boron carbide are expensive and involve the use of toxic chemicals that adversely affect environment. In the present work, we report for the first time the use of the hydrothermal method for converting the cellulose from cotton as the carbon precursor for B4C. The carbon precursor is converted into functionalized porous carbonaceous material by hydrothermal treatment followed by sodium borohydride. It is further treated with boric acid to make it a B4C precursor. The precursor is characterized by UV-visible diffuse reflectance, Raman, Fourier transform infrared, photoluminescent and energy dispersive spectroscopy. The morphology and structure analysis is carried out using field emission scanning electron microscopy and x-ray diffraction techniques. The results of structural and optical characterization of the sample synthesized are compared with the commercial B4C. The thermal stability of the sample is studied by thermogravimetric analysis. The sample annealed at 700 °C is found to be B4C devoid of amorphous carbon with a yield of 44.7%. The analysis reveals the formation of boron carbide from the sample.

Fabrication of boron articles

DOEpatents

Benton, Samuel T.

1976-01-01

This invention is directed to the fabrication of boron articles by a powder metallurgical method wherein the articles are of a density close to the theoretical density of boron and are essentially crackfree. The method comprises the steps of admixing 1 to 10 weight percent carbon powder with amorphous boron powder, cold pressing the mixture and then hot pressing the cold pressed compact into the desired article. The addition of the carbon to the mixture provides a pressing aid for inhibiting the cracking of the hot pressed article and is of a concentration less than that which would cause the articles to possess significant concentrations of boron carbide.

Dynamic Failure and Fragmentation of a Hot-Pressed Boron Carbide

NASA Astrophysics Data System (ADS)

Sano, Tomoko; Vargas-Gonzalez, Lionel; LaSalvia, Jerry; Hogan, James David

2017-12-01

This study investigates the failure and fragmentation of a hot-pressed boron carbide during high rate impact experiments. Four impact experiments are performed using a composite-backed target configuration at similar velocities, where two of the impact experiments resulted in complete target penetration and two resulted in partial penetration. This paper seeks to evaluate and understand the dynamic behavior of the ceramic that led to either the complete or partial penetration cases, focusing on: (1) surface and internal failure features of fragments using optical, scanning electron, and transmission electron microscopy, and (2) fragment size analysis using state-of-the-art particle-sizing technology that informs about the consequences of failure. Detailed characterization of the mechanical properties and the microstructure is also performed. Results indicate that transgranular fracture was the primary mode of failure in this boron carbide material, and no stress-induced amorphization features were observed. Analysis of the fragment sizes for the partial and completely penetrated experiments revealed a possible correlation between larger fragment sizes and impact performance. The results will add insight into designing improved advanced ceramics for impact protection applications.

Process for microwave sintering boron carbide

DOEpatents

Holcombe, C.E.; Morrow, M.S.

1993-10-12

A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

Process for microwave sintering boron carbide

DOEpatents

Holcombe, Cressie E.; Morrow, Marvin S.

1993-01-01

A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

Mechanism for amorphization of boron carbide under complex stress conditions

NASA Astrophysics Data System (ADS)

Li, Jun; Xu, Shuang; Liu, Lisheng; Wang, Zhen; Zhang, Jinyong; Liu, Qiwen

2018-05-01

As an excellent material, the application of boron carbide (B4C) is limited by pressure-induced amorphization. To understand the mechanism for amorphization in B4C, first-principles methods based on density functional theory were employed to investigate the mechanical behaviors and the deformation process in B4C under complex stress conditions with six different biaxial perpendicular compression directions. The angle (θ) between one of the loading directions and the [0 0 0 1] c-axis ranged from 0° to 75° with every 15° interval. We found that the maximum stress at θ = 30° is 124.5 GPa, which is the lowest among six biaxial compressions. Simulation results show that the mechanism for amorphization in B4C under complex stress conditions is complicated. We take the θ = 30° biaxial compression as an example to explain the complicated deformation process. In the elastic deformation region, sudden bending of three-atom chains occurs and results in a stress fluctuation. Then the formation of new B–B bonds between the three-atom chains and the icosahedra leads to the first stress drop. After that, the B–C bonds in the chains are broken, resulting in the second stress drop. In this process, the icosahedra are partially destroyed. The stress increases continuously and then drops at the critical failure strain. Finally, the fully destruction of icosahedra leads to amorphization in B4C. However, under other five biaxial compressions, the B–C bonds in three-atom chains are not fractured before structural failure. Understanding the deformation mechanism for amorphization of B4C in real applications is prime important for proposing how to resist amorphization and enhance the toughness of B4C.

Continuous method of producing silicon carbide fibers

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Nguyen, Kimmai Thi (Inventor); Rabe, James Alan (Inventor)

1999-01-01

This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.

Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

NASA Astrophysics Data System (ADS)

Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

2016-09-01

High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

Boron containing multilayer coatings and method of fabrication

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1997-09-23

Hard coatings are fabricated from multilayer boron/boron carbide, boron carbide/cubic boron nitride, and boron/boron nitride/boron carbide, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron and boron carbide used in forming the multilayers are formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/boron carbide, and boron carbide/cubic boron nitride is produced by depositing alternate layers of boron, cubic boron nitride or boron carbide, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be of a discrete or a blended or graded composition. 6 figs.

Boron containing multilayer coatings and method of fabrication

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1997-01-01

Hard coatings are fabricated from multilayer boron/boron carbide, boron carbide/cubic boron nitride, and boron/boron nitride/boron carbide, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron and boron carbide used in forming the multilayers are formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/boron carbide, and boron carbide/cubic boron nitride is produced by depositing alternate layers of boron, cubic boron nitride or boron carbide, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be of a discrete or a blended or graded composition.

Reformulation of Nonlinear Anisotropic Crystal Elastoplasticity for Impact Physics

DTIC Science & Technology

2015-03-01

interest include metals, ceramics , minerals, and energetic materials . Accurate, efficient, stable, and thermodynamically consistent models for...Clayton JD. Phase field theory and analysis of pressure-shear induced amorphization and failure in boron carbide ceramic . AIMS Materials Science. 2014;1...of Nonlinear Anisotropic Crystal Elastoplasticity for Impact Physics by JD Clayton Weapons and Materials Research Directorate, ARL

Methods of producing continuous boron carbide fibers

DOEpatents

Garnier, John E.; Griffith, George W.

2015-12-01

Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

Microwave sintering of boron carbide

DOEpatents

Blake, R.D.; Katz, J.D.; Petrovic, J.J.; Sheinberg, H.

1988-06-10

A method for forming boron carbide into a particular shape and densifying the green boron carbide shape. Boron carbide in powder form is pressed into a green shape and then sintered, using a microwave oven, to obtain a dense boron carbide body. Densities of greater than 95% of theoretical density have been obtained. 1 tab.

Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene

DTIC Science & Technology

2007-03-01

COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Lonnie Carlson, Major...DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Presented to the Faculty Department of Engineering Physics Graduate School...DISTRIBUTION UNLIMITED AFIT/GNE/ENP/07-01 COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE Lonnie

Novel passivation dielectrics-The boron- or phosphorus-doped hydrogenated amorphous silicon carbide films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C.Y.; Fang, Y.K.; Huang, C.F.

1985-02-01

Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared and studied in a radiofrequency glowdischarge system, using a gas mixture of SiH/sub 4/ and one of the following carbon sources: methane (CH/sub 4/), benzene (C/sub 6/H/sub 6/), toluene (C/sub 7/H/sub 8/), sigma-xylene (C/sub 8/H/sub 10/), trichloroethane (C/sub 2/H/sub 3/Cl/sub 3/), trichloroethylene (C/sub 2/HCl/sub 3/), or carbon tetrachloride (CCl/sub 4/). The effect of doping phosphorus and boron into those a-SiC:H films on chemical etching rate, electrica dc resistivity, breakdown strength, and optical refractive index have been systematically investigated. Their chemical etching properties were examined by immersing in 49% HF, buffered HF,more » 180/sup 0/C H/sub 3/PO/sub 4/ solutions, or in CF/sub 4/ + O/sub 2/ plasma. It was found that the boron-doped a-SiC:H film possesses five times slower etching rate than the undoped one, while phosphorus-doped a-SiC:H film shows about three times slower. Among those a-SiC:H films, the one obtained from a mixture of SiH/sub 4/ and benzene shows the best etch-resistant property, while the ones obtained from a mixture of SiH/sub 4/ and chlorine containing carbon sources (e.g., trichloroethylene, trichloroethane, or carbon tetrachloride) shows that they are poor in etching resistance (i.e., the etching rate is higher). By measuring dc resistivity, dielectric breakdown strength, and effective refractive index, it was found that boron- or phosphorus-doped a-SiC:H films exhibit much higher dielectric strength and resistivity, but lower etching rate, presumably because of higher density.« less

QMD and classical MD simulation of alpha boron and boron-carbide behavior under pressure

NASA Astrophysics Data System (ADS)

Yanilkin, Alexey; Korotaev, Pavel; Kuksin, Alexey; Pokatashkin, Pavel

2015-06-01

Boron and some boron-rich compounds are super-hard and light-weighted material with a wide range of different applications. Nevertheless, the question of its behavior under pressure is still open. In the present work we study the equation of state (EOS), stability and deformation of α-B and B4C under high pressure within quantum and classical molecular dynamics (QMD and MD). Based on QMD results the finite temperature EOSs are revealed. CBC chain bending, amorphization and recrystallization of B4C are investigated under hydrostatic, uniform and uniaxial compression. The influence of nonhydrostatic loading is discussed. Angular dependent interatomic potentials are derived by force-matching method. The properties of α-B and B4C, obtained by classical potential, are verified. Structure, bulk modulus, pressure-volume relation, Gruneisen and thermal expansion coefficients are in good agreement with both ab initio and experimental data. These potentials are used to study shock wave propagation in a single crystal of α-B and B4C. Two mechanisms of shear deformation are observed: stacking fault formation and local amorphization. The crystallographic orientations of defects are in a good agreement with experiments.

Method for preparing boron-carbide articles

DOEpatents

Benton, S.T.; Masters, D.R.

1975-10-21

The invention is directed to the preparation of boron carbide articles of various configurations. A stoichiometric mixture of particulate boron and carbon is confined in a suitable mold, heated to a temperature in the range of about 1250 to 1500$sup 0$C for effecting a solid state diffusion reaction between the boron and carbon for forming the boron carbide (B$sub 4$C), and thereafter the resulting boron-carbide particles are hot-pressed at a temperature in the range of about 1800 to 2200$sup 0$C and a pressure in the range of about 1000 to 4000 psi for densifying and sintering the boron carbide into the desired article.

Electroextraction of boron from boron carbide scrap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Ashish; Anthonysamy, S., E-mail: sas@igcar.gov.in; Ghosh, C.

2013-10-15

Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction processmore » developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.« less

Characterization of boron carbide with an electron microprobe

NASA Technical Reports Server (NTRS)

Matteudi, G.; Ruste, J.

1983-01-01

Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

Mesoscale Modeling of Dynamic Compression of Boron Carbide Polycrystals

DTIC Science & Technology

2013-05-01

reported later. Recrystallization has not been reported in the literature and is precluded by the model, meaning : 0 →1 is irreversible. Following...average HEL, above which a measurable strength loss is evident (Vogler et al., 2004), though amorphization has not been definitively proven to cause... definition (A.7) is exact when ı2 E→ 0 (Clayton, 2012). This criterion agrees exactly with that for classical stability under hydrostatic loading

Raman effect in icosahedral boron-rich solids

PubMed Central

Werheit, Helmut; Filipov, Volodymyr; Kuhlmann, Udo; Schwarz, Ulrich; Armbrüster, Marc; Leithe-Jasper, Andreas; Tanaka, Takaho; Higashi, Iwami; Lundström, Torsten; Gurin, Vladimir N; Korsukova, Maria M

2010-01-01

We present Raman spectra of numerous icosahedral boron-rich solids having the structure of α-rhombohedral, β-rhombohedral, α-tetragonal, β-tetragonal, YB66, orthorhombic or amorphous boron. The spectra were newly measured and, in some cases, compared with reported data and discussed. We emphasize the importance of a high signal-to-noise ratio in the Raman spectra for detecting weak effects evoked by the modification of compounds, accommodation of interstitial atoms and other structural defects. Vibrations of the icosahedra, occurring in all the spectra, are interpreted using the description of modes in α-rhombohedral boron by Beckel et al. The Raman spectrum of boron carbide is largely clarified. Relative intra- and inter-icosahedral bonding forces are estimated for the different structural groups and for vanadium-doped β-rhombohedral boron. The validity of Badger's rule is demonstrated for the force constants of inter-icosahedral B–B bonds, whereas the agreement is less satisfactory for the intra-icosahedral B–B bonds. PMID:27877328

Controlling the Morphology and Oxidation Resistance of Boron Carbide Synthesized Via Carbothermic Reduction Reaction

NASA Astrophysics Data System (ADS)

Ahmed, Yasser M. Z.; El-Sheikh, Said M.; Ewais, Emad M. M.; Abd-Allah, Asmaa A.; Sayed, Said A.

2017-03-01

Boron carbide powder was synthesized from boric acid and lactose mixtures via easy procedure. Boric acid and lactose solution mixtures were roasted in stainless steel pot at 280 °C for 24 h. Boron carbide was obtained by heating the roasted samples under flowing of industrial argon gas at 1500 °C for 3 h. The amount of borate ester compound in the roasted samples was highly influenced by the boron/carbon ratio in the starting mixtures and plays a versatile role in the produced boron carbide. The high-purity boron carbide powder was produced with a sample composed of lowest boron/carbon ratio of 1:1 without calcination step. Particle morphology was changed from nano-needles like structure of 8-10 nm size with highest carbon ratio mixture to spherical shape of >150 nm size with lowest one. The oxidation resistance performance of boron carbide is highly dependent on the morphology and grain size of the synthesized powder.

Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genisel, Mustafa Fatih; Uddin, Md. Nizam; Say, Zafer

2011-10-01

In this study, we implanted N{sup +} and N{sub 2}{sup +} ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible phase separation routes in boron carbon nitride (BCN) films. In addition, we investigated the effect of implanted C{sup +} ions in sputter deposited amorphous boron nitride (a-BN) films. Implanted ion energies for all ion species were set at 40 KeV. Implanted films were then analyzed using x-ray photoelectron spectroscopy (XPS). The changes in the chemical composition and bonding chemistry due to ion-implantationmore » were examined at different depths of the films using sequential ion-beam etching and high resolution XPS analysis cycles. A comparative analysis has been made with the results from sputter deposited BCN films suggesting that implanted nitrogen and carbon atoms behaved very similar to nitrogen and carbon atoms in sputter deposited BCN films. We found that implanted nitrogen atoms would prefer bonding to carbon atoms in the films only if there is no boron atom in the vicinity or after all available boron atoms have been saturated with nitrogen. Implanted carbon atoms also preferred to either bond with available boron atoms or, more likely bonded with other implanted carbon atoms. These results were also supported by ab-initio density functional theory calculations which indicated that carbon-carbon bonds were energetically preferable to carbon-boron and carbon-nitrogen bonds.« less

Versatile Boron Carbide-Based Visual Obscurant Compositions for Smoke Munitions

DTIC Science & Technology

2015-04-17

Versatile Boron Carbide-Based Visual Obscurant Compositions for Smoke Munitions Anthony P. Shaw,*,† Giancarlo Diviacchi,‡ Ernest L. Black,‡ Jared D...have been demonstrated to produce thick white smoke clouds upon combustion. These compositions use powdered boron carbide (B4C) as a pyrotechnic...ignition and are safe to handle. KEYWORDS: Smoke, Obscurants, Pyrotechnics, Boron carbide, Sustainable chemistry ■ INTRODUCTION Visible obscuration

Low Temperature Processing of Boron Carbide Cement Composite for Tough, Wear Resistant Structures

DTIC Science & Technology

1997-12-15

TITLE AND SUBTITLE Low Temperature Processing of Boron Carbide Cement Composite for Tough, Wear Resistant Structures 6. AUTHOR(S) Kristen J. Law...project has developed a low temperature polymer ceramic composite consisting of boron carbide layers bonded by cement, laminated with polymer...composite have been shown to compare favorably to those of partially sintered boron carbide. Applications for this material have been identified in

Development and Performance of Boron Carbide-Based Smoke Compositions

DTIC Science & Technology

2013-03-06

DOI: 10.1002/prep.201200166 Development and Performance of Boron Carbide -Based Smoke Compositions Anthony P. Shaw,*[a] Jay C. Poret,[a] Robert A...volatilized and recondense to give smoke. Boron carbide was recognized as a pyrotechnic fuel many years ago, but it has since been overlooked. A 1961...Abstract : Pyrotechnic smoke compositions for visual ob- scuration containing boron carbide , potassium nitrate, po- tassium chloride, and various lubricants

Processing and characterization of boron carbide-hafnium diboride ceramics

NASA Astrophysics Data System (ADS)

Brown-Shaklee, Harlan James

Hafnium diboride based ceramics are promising candidate materials for advanced aerospace and nuclear reactor components. The effectiveness of boron carbide and carbon as HfB2 sintering additives was systematically evaluated. In the first stage of the research, boron carbide and carbon additives were found to improve the densification behavior of milled HfB2 powder in part by removing oxides at the HfB2 surface during processing. Boron carbide additives reduced the hot pressing temperature of HfB2 by 150°C compared to carbon, which reduced the hot pressing temperature by ˜50°C. Reduction of oxide impurities alone could not explain the difference in sintering enhancement, however, and other mechanisms of enhancement were evaluated. Boron carbides throughout the homogeneity range were characterized to understand other mechanisms of sintering enhancement in HfB2. Heavily faulted carbon rich and boron rich boron carbides were synthesized for addition to HfB2. The greatest enhancement to densification was observed in samples containing boron- and carbon-rich compositions whereas B6.5 C provided the least enhancement to densification. It is proposed that carbon rich and boron rich boron carbides create boron and hafnium point defects in HfB2, respectively, which facilitate densification. Evaluation of the thermal conductivity (kth) between room temperature and 2000°C suggested that the stoichiometry of the boron carbide additives did not significantly affect kth of HfB2-BxC composites. The improved sinterability and the high kth (˜110 W/m-K at 300K and ˜90 W/m-K at 1000°C ) of HfB2-BxC ceramics make them excellent candidates for isotopically enriched reactor control materials.

Adhesion, friction, and deformation of ion-beam-deposited boron nitride films

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Buckley, Donald H.; Alterovitz, Samuel A.; Pouch, John J.; Liu, David C.

1987-01-01

The tribological properties and mechanical strength of boron nitride films were investigated. The BN films were predominantly amorphous and nonstoichiometric and contained small amounts of oxides and carbides. It was found that the yield pressure at full plasticity, the critical load to fracture, and the shear strength of interfacial adhesive bonds (considered as adhesion) depended on the type of metallic substrate on which the BN was deposited. The harder the substrate, the greater the critical load and the adhesion. The yield pressures of the BN film were 12 GPa for the 440C stainless steel substrate, 4.1 GPa for the 304 stainless steel substrate, and 3.3 GPa for the titanium substrate.

Adhesion, friction and deformation of ion-beam-deposited boron nitride films

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.; Alterovitz, S. A.; Pouch, J. J.; Liu, D. C.

1987-01-01

The tribological properties and mechanical strength of boron nitride films were investigated. The BN films were predominantly amorphous and nonstoichiometric and contained small amounts of oxides and carbides. It was found that the yield pressure at full plasticity, the critical load to fracture, and the shear strength of interfacial adhesive bonds (considered as adhesion) depended on the type of metallic substrate on which the BN was deposited. The harder the substrate, the greater the critical load and the adhesion. The yield pressures of the BN film were 12 GPa for the 440C stainless steel substrate, 4.1 GPa for the 304 stainless steel substrate, and 3.3 GPa for the titanium substrate.

Dimensional Analysis and Extended Hydrodynamic Theory Applied to Long-Rod Penetration of Ceramics

DTIC Science & Technology

2016-07-01

thick ceramic targets by tungsten long rod projectiles. The ceramics are AD-995 alumina, aluminum nitride, silicon carbide, and boron carbide. Test...of confined thick ceramic targets by tungsten long rod projectiles. The ceramics are AD-995 alumina, aluminum nitride, silicon carbide, and boron ...since the mid 20th century. Popular candidate ceramics for such systems include alumina, aluminum nitride, boron carbide, silicon carbide, and titanium

Preliminary study of neutron absorption by concrete with boron carbide addition

NASA Astrophysics Data System (ADS)

Abdullah, Yusof; Ariffin, Fatin Nabilah Tajul; Hamid, Roszilah; Yusof, Mohd Reusmaazran; Zali, Nurazila Mat; Ahmad, Megat Harun Al Rashid Megat; Yazid, Hafizal; Ahmad, Sahrim; Mohamed, Abdul Aziz

2014-02-01

Concrete has become a conventional material in construction of nuclear reactor due to its properties like safety and low cost. Boron carbide was added as additives in the concrete construction as it has a good neutron absorption property. The sample preparation for concrete was produced with different weight percent of boron carbide powder content. The neutron absorption rate of these samples was determined by using a fast neutron source of Americium-241/Be (Am-Be 241) and detection with a portable backscattering neutron detector. Concrete with 20 wt % of boron carbide shows the lowest count of neutron transmitted and this indicates the most neutrons have been absorbed by the concrete. Higher boron carbide content may affect the concrete strength and other properties.

Spatial Distribution of Amorphization Intensity in B4C during Rate-Dependent Indentation and Ballistic Impact Processes [1.2 Solid Mechanics

DTIC Science & Technology

2017-11-17

SECURITY CLASSIFICATION OF: At high pressures, such as those encountered in ballistic impact, boron carbide (B4C) suffers from loss of crystallinity...ELEMENT NUMBER 5b. GRANT NUMBER 5a. CONTRACT NUMBER Form Approved OMB NO . 0704-0188 3. DATES COVERED (From - To) - Approved for public release...Highway, Suite 1204, Arlington VA, 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject

Preliminary study of neutron absorption by concrete with boron carbide addition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdullah, Yusof, E-mail: yusofabd@nuclearmalaysia.gov.my; Yusof, Mohd Reusmaazran; Zali, Nurazila Mat

2014-02-12

Concrete has become a conventional material in construction of nuclear reactor due to its properties like safety and low cost. Boron carbide was added as additives in the concrete construction as it has a good neutron absorption property. The sample preparation for concrete was produced with different weight percent of boron carbide powder content. The neutron absorption rate of these samples was determined by using a fast neutron source of Americium-241/Be (Am-Be 241) and detection with a portable backscattering neutron detector. Concrete with 20 wt % of boron carbide shows the lowest count of neutron transmitted and this indicates themore » most neutrons have been absorbed by the concrete. Higher boron carbide content may affect the concrete strength and other properties.« less

Design of boron carbide-shielded irradiation channel of the outer irradiation channel of the Ghana Research Reactor-1 using MCNP.

PubMed

Abrefah, R G; Sogbadji, R B M; Ampomah-Amoako, E; Birikorang, S A; Odoi, H C; Nyarko, B J B

2011-01-01

The MCNP model for the Ghana Research Reactor-1 was redesigned to incorporate a boron carbide-shielded irradiation channel in one of the outer irradiation channels. Extensive investigations were made before arriving at the final design of only one boron carbide covered outer irradiation channel; as all the other designs that were considered did not give desirable results of neutronic performance. The concept of redesigning a new MCNP model, which has a boron carbide-shielded channel is to equip the Ghana Research Reactor-1 with the means of performing efficient epithermal neutron activation analysis. After the simulation, a comparison of the results from the original MCNP model for the Ghana Research Reactor-1 and the new redesigned model of the boron carbide shielded channel was made. The final effective criticality of the original MCNP model for the GHARR-1 was recorded as 1.00402 while that of the new boron carbide designed model was recorded as 1.00282. Also, a final prompt neutron lifetime of 1.5245 × 10(-4)s was recorded for the new boron carbide designed model while a value of 1.5571 × 10(-7)s was recorded for the original MCNP design of the GHARR-1. Copyright © 2010 Elsevier Ltd. All rights reserved.

Boron carbide nanostructures: A prospective material as an additive in concrete

NASA Astrophysics Data System (ADS)

Singh, Paviter; Kaur, Gurpreet; Kumar, Rohit; Kumar, Umesh; Singh, Kulwinder; Kumar, Manjeet; Bala, Rajni; Meena, Ramovatar; Kumar, Akshay

2018-05-01

In recent decades, manufacture and ingestion of concrete have increased particularly in developing countries. Due to its low cost, safety and strength, concrete have become an economical choice for protection of radiation shielding material in nuclear reactors. As boron carbide has been known as a neutron absorber material makes it a great candidate as an additive in concrete for shielding radiation. This paper presents the synthesis of boron carbide nanostructures by using ball milling method. The X-ray diffraction pattern, Fourier Transform Infrared Spectroscopy (FTIR) and Scanning Electron Microscope analysis confirms the formation of boron carbide nanostructures. The effect of boron carbide nanostructures on the strength of concrete samples was demonstrated. The compressive strength tests of concrete cube B4C powder additives for 0 % and 5 % of total weight of cement was compared for different curing time period such as 7, 14, 21 and 28 days. The high compressive strength was observed when 5 wt % boron carbide nanostructures were used as an additive in concrete samples after 28 days curing time and showed significant improvement in strength.

Boron-carbide-aluminum and boron-carbide-reactive metal cermets

DOEpatents

Halverson, Danny C.; Pyzik, Aleksander J.; Aksay, Ilhan A.

1986-01-01

Hard, tough, lightweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidation step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modulus of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi.sqroot.in. These composites and methods can be used to form a variety of structural elements.

Boron-carbide-aluminum and boron-carbide-reactive metal cermets. [B/sub 4/C-Al

DOEpatents

Halverson, D.C.; Pyzik, A.J.; Aksay, I.A.

1985-05-06

Hard, tough, lighweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidated step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modules of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi..sqrt..in. These composites and methods can be used to form a variety of structural elements.

Abrasive slurry composition for machining boron carbide

DOEpatents

Duran, Edward L.

1985-01-01

An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

Abrasive slurry composition for machining boron carbide

DOEpatents

Duran, E.L.

1984-11-29

An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

Equations of state and melting curve of boron carbide in the high-pressure range of shock compression

DOE Office of Scientific and Technical Information (OSTI.GOV)

Molodets, A. M., E-mail: molodets@icp.ac.ru; Golyshev, A. A.; Shakhrai, D. V.

We have constructed the equations of state for crystalline boron carbide B{sub 11}C (C–B–C) and its melt under high dynamic and static pressures. A kink on the shock adiabat for boron carbide has been revealed in the pressure range near 100 GPa, and the melting curve with negative curvature in the pressure range 0–120 GPa has been calculated. The results have been used for interpreting the kinks on the shock adiabat for boron carbide in the pressure range of 0–400 GPa.

Priority compositions of boron carbide crystals obtained by self-propagating high-temperature synthesis

NASA Astrophysics Data System (ADS)

Ponomarev, V. I.; Konovalikhin, S. V.; Kovalev, I. D.; Vershinnikov, V. I.

2015-09-01

Splitting of reflections from boron carbide has been found for the first time by an X-ray diffraction study of polycrystalline mixture of boron carbide В15- х С х , (1.5 ≤ x ≤ 3) and its magnesium derivative C4B25Mg1.42. An analysis of reflection profiles shows that this splitting is due to the presence of boron carbide phases of different compositions in the sample, which are formed during crystal growth. The composition changes from В12.9С2.1 to В12.4С2.6.

Continuum modeling of twinning, amorphization, and fracture: theory and numerical simulations

NASA Astrophysics Data System (ADS)

Clayton, J. D.; Knap, J.

2018-03-01

A continuum mechanical theory is used to model physical mechanisms of twinning, solid-solid phase transformations, and failure by cavitation and shear fracture. Such a sequence of mechanisms has been observed in atomic simulations and/or experiments on the ceramic boron carbide. In the present modeling approach, geometric quantities such as the metric tensor and connection coefficients can depend on one or more director vectors, also called internal state vectors. After development of the general nonlinear theory, a first problem class considers simple shear deformation of a single crystal of this material. For homogeneous fields or stress-free states, algebraic systems or ordinary differential equations are obtained that can be solved by numerical iteration. Results are in general agreement with atomic simulation, without introduction of fitted parameters. The second class of problems addresses the more complex mechanics of heterogeneous deformation and stress states involved in deformation and failure of polycrystals. Finite element calculations, in which individual grains in a three-dimensional polycrystal are fully resolved, invoke a partially linearized version of the theory. Results provide new insight into effects of crystal morphology, activity or inactivity of different inelasticity mechanisms, and imposed deformation histories on strength and failure of the aggregate under compression and shear. The importance of incorporation of inelastic shear deformation in realistic models of amorphization of boron carbide is noted, as is a greater reduction in overall strength of polycrystals containing one or a few dominant flaws rather than many diffusely distributed microcracks.

Surface Chemistry, Microstructure, and Tribological Properties of Cubic Boron Nitride Films

NASA Technical Reports Server (NTRS)

Watanabe, Shuichi; Wheeler, Donald R.; Abel, Phillip B.; Street, Kenneth W.; Miyoshi, Kazuhisa; Murakawa, Masao; Miyake, Shojiro

1998-01-01

This report deals with the surface chemistry, microstructure, bonding state, morphology, and friction and wear properties of cubic boron nitride (c-BN) films that were synthesized by magnetically enhanced plasma ion plating. Several analytical techniques - x-ray photoelectron spectroscopy, transmission electron microscopy and electron diffraction, Fourier transform infrared spectroscopy, atomic force microscopy, and surface profilometry - were used to characterize the films. Sliding friction experiments using a ball-on-disk configuration were conducted for the c-BN films in sliding contact with 440C stainless-steel balls at room temperature in ultrahigh vacuum (pressure, 10(exp -6), in ambient air, and under water lubrication. Results indicate that the boron-to-nitrogen ratio on the surface of the as-deposited c-BN film is greater than 1 and that not all the boron is present as boron nitride but a small percentage is present as an oxide. Both in air and under water lubrication, the c-BN film in sliding contact with steel showed a low wear rate, whereas a high wear rate was observed in vacuum. In air and under water lubrication, c-BN exhibited wear resistance superior to that of amorphous boron nitride, titanium nitride, and titanium carbide.

Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

NASA Technical Reports Server (NTRS)

Tanaka, Hidehiko

1987-01-01

A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

Magneto-Resistance in thin film boron carbides

NASA Astrophysics Data System (ADS)

Echeverria, Elena; Luo, Guangfu; Liu, J.; Mei, Wai-Ning; Pasquale, F. L.; Colon Santanta, J.; Dowben, P. A.; Zhang, Le; Kelber, J. A.

2013-03-01

Chromium doped semiconducting boron carbide devices were fabricated based on a carborane icosahedra (B10C2H12) precursor via plasma enhanced chemical vapor deposition, and the transition metal atoms found to dope pairwise on adjacent icosahedra site locations. Models spin-polarized electronic structure calculations of the doped semiconducting boron carbides indicate that some transition metal (such as Cr) doped semiconducting boron carbides may act as excellent spin filters when used as the dielectric barrier in a magnetic tunnel junction structure. In the case of chromium doping, there may be considerable enhancements in the magneto-resistance of the heterostructure. To this end, current to voltage curves and magneto-transport measurements were performed in various semiconducting boron carbide both in and out plane. The I-V curves as a function of external magnetic field exhibit strong magnetoresistive effects which are enhanced at liquid Nitrogen temperatures. The mechanism for these effects will be discussed in the context of theoretical calculations.

Methods of repairing a substrate

NASA Technical Reports Server (NTRS)

Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

2011-01-01

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium boride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

Dynamic Modulus and Damping of Boron, Silicon Carbide, and Alumina Fibers

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.; Williams, W.

1980-01-01

The dynamic modulus and damping capacity for boron, silicon carbide, and silicon carbide coated boron fibers were measured from-190 to 800 C. The single fiber vibration test also allowed measurement of transverse thermal conductivity for the silicon carbide fibers. Temperature dependent damping capacity data for alumina fibers were calculated from axial damping results for alumina-aluminum composites. The dynamics fiber data indicate essentially elastic behavior for both the silicon carbide and alumina fibers. In contrast, the boron based fibers are strongly anelastic, displaying frequency dependent moduli and very high microstructural damping. Ths single fiber damping results were compared with composite damping data in order to investigate the practical and basic effects of employing the four fiber types as reinforcement for aluminum and titanium matrices.

Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility

DTIC Science & Technology

2014-11-18

measuring XPS, XANES, NMR, Raman, and IR for Figure 2. Stress−strain relation of various structures shearing along the (011 ̅1 ̅)/ə ̅101> amorphous slip...Philos. Mag. 1954, 45, 823− 843. (35) Becke, A. D.; Edgecombe, K. E. A Simple Measure of Electron Localization in Atomic and Molecular Systems. J. Chem...10.1021/jz5022697 | J. Phys. Chem. Lett. 2014, 5, 4169−41744173 (46) Roundy, D.; Krenn, C. R.; Cohen, M. L.; Morris, J. W., Jr. Ideal Shear Strengths of fcc

New Icosahedral Boron Carbide Semiconductors

NASA Astrophysics Data System (ADS)

Echeverria Mora, Elena Maria

Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto-resistance, however, these results suggest practical device applications, especially as such effects are manifested in nanoscale films with facile fabrication. Overall, the greater negative magneto-resistance, when undoped with an aromatic, suggests a material with more defects and is consistent with a shorter carrier lifetime.

Semiconducting boron carbide polymers devices for neutron detection

NASA Astrophysics Data System (ADS)

Echeverria, Elena; Pasquale, Frank L.; James, Robinson; Colón Santana, Juan A.; Adenwalla, Shireen; Kelber, Jeffry A.; Dowben, Peter A.

2014-03-01

Boron carbide materials, with aromatic compounds included, prove to be effective materials as solid state neutron detector detectors. The I-V characteristic curves for these heterojunction diodes with silicon show that these modified boron carbides, in the presence of these linking groups such as 1,4-diaminobenzene (DAB) and pyridine, are p-type. Cadmium was used as shield to discriminate between neutron-induced signals and thermal neutrons, and thermal neutron capture is evident, while gamma detection was not realized. Neutron detection signals for these heterojunction diode were observed, a measurable zero bias current noted, even without complete electron-hole collection. This again illustrates that boron carbide devices can be considered a neutron voltaic.

Boron Carbide: Stabilization of Highly-Loaded Aqueous Suspensions, Pressureless Sintering, and Room Temperature Injection Molding

NASA Astrophysics Data System (ADS)

Diaz-Cano, Andres

Boron carbide (B4C) is the third hardest material after diamond and cubic boron nitride. It's unique combination of properties makes B4C a highly valuable material. With hardness values around 35 MPa, a high melting point, 2450°C, density of 2.52 g/cm3, and high chemical inertness, boron carbide is used in severe wear components, like cutting tools and sandblasting nozzles, nuclear reactors' control rots, and finally and most common application, armor. Production of complex-shaped ceramic component is complex and represents many challenges. Present research presents a new and novel approach to produce complex-shaped B4C components. Proposed approach allows forming to be done at room temperatures and under very low forming pressures. Additives and binder concentrations are kept as low as possible, around 5Vol%, while ceramics loadings are maximized above 50Vol%. Given that proposed approach uses water as the main solvent, pieces drying is simple and environmentally safe. Optimized formulation allows rheological properties to be tailored and adjust to multiple processing approaches, including, injection molding, casting, and additive manufacturing. Boron carbide samples then were pressureless sintered. Due to the high covalent character of boron carbide, multiples sintering aids and techniques have been proposed in order to achieve high levels of densification. However, is not possible to define a clear sintering methodology based on literature. Thus, present research developed a comprehensive study on the effect of multiple sintering aids on the densification of boron carbide when pressureless sintered. Relative densities above 90% were achieved with values above 30MPa in hardness. Current research allows extending the uses and application of boron carbide, and other ceramic systems, by providing a new approach to produce complex-shaped components with competitive properties.

Characterization of individual straight and kinked boron carbide nanowires

NASA Astrophysics Data System (ADS)

Cui, Zhiguang

Boron carbides represent a class of ceramic materials with p-type semiconductor natures, complex structures and a wide homogeneous range of carbon compositions. Bulk boron carbides have long been projected as promising high temperature thermoelectric materials, but with limited performance. Bringing the bulk boron carbides to low dimensions (e.g., nanowires) is believed to be an option to enhance their thermoelectric performance because of the quantum size effects. However, the fundamental studies on the microstructure-thermal property relation of boron carbide nanowires are elusive. In this dissertation work, systematic structural characterization and thermal conductivity measurement of individual straight and kinked boron carbide nanowires were carried out to establish the true structure-thermal transport relation. In addition, a preliminary Raman spectroscopy study on identifying the defects in individual boron carbide nanowires was conducted. After the synthesis of single crystalline boron carbide nanowires, straight nanowires accompanied by the kinked ones were observed. Detailed structures of straight boron carbide nanowires have been reported, but not the kinked ones. After carefully examining tens of kinked nanowires utilizing Transmission Electron Microscopy (TEM), it was found that they could be categorized into five cases depending on the stacking faults orientations in the two arms of the kink: TF-TF, AF-TF, AF-AF, TF-IF and AF-IF kinks, in which TF, AF and IF denotes transverse faults (preferred growth direction perpendicular to the stacking fault planes), axial faults (preferred growth direction in parallel with the stacking fault planes) and inclined faults (preferred growth direction neither perpendicular to nor in parallel with the stacking fault planes). Simple structure models describing the characteristics of TF-TF, AF-TF, AF-AF kinked nanowires are constructed in SolidWorks, which help to differentiate the kinked nanowires viewed from the zone axes where stacking faults are invisible. In collaboration with the experts in the field of thermal property characterization of one dimensional nanostructures, thermal conductivities of over 60 nanowires including both straight and kinked ones have been measured in the temperature range of 20 - 420 K and the parameters (i.e., carbon contents, diameters, stacking faults densities/orientations and kinks) affecting the phonon transport were explored. The results disclose strong carbon content and diameter dependence of thermal conductivities of boron carbide nanowires, which decreases as lowering the carbon content and diameter. Stacking fault orientations do modulate the phonon transport (kappaTF < kappa AF), while stacking fault densities seems to only have obvious effects on phonon transport when meeting certain threshold ( 39%). The most interesting discovery is significant reduction of thermal conductivity (15% - 40%) in kinked boron carbide nanowires due to phonon mode conversions and scattering at the kink site. Last but not least, micro-Raman spectroscopy study on individual boron carbide nanowires has been performed for the first time, to the best of our knowledge. Based on the preliminary data, it is found that the stacking fault orientations have no apparent effect on the Raman scattering, but the stacking fault densities do. In addition, up as the size going down to nanoscale, some Raman modes are inactive while some new ones show up, which is largely ascribed to the quantum confinement effects. One more important finding is that the carbon content also plays important role in the Raman scattering of boron carbide nanowires in the low frequency region (< 600 cm-1), which mainly comes from the 3-atom chains (C-B-C or C-B-B).

High-pressure phase transition makes B 4.3 C boron carbide a wide-gap semiconductor

DOE PAGES

Hushur, Anwar; Manghnani, Murli H.; Werheit, Helmut; ...

2016-01-11

Single-crystal B4.3C boron carbide is investigated concerning the pressure-dependence of optical properties and of Raman-active phonons up to ~70 GPa. The high concentration of structural defects determining the electronic properties of boron carbide at ambient conditions initially decrease and finally vanish with pressure increasing. We obtain this immediately from transparency photos, allowing to estimate the pressure-dependent variation of the absorption edge rapidly increasing around 55 GPa. Glass-like transparency at pressures exceeding 60 GPa indicate that the width of the band exceeds ~3.1 eV thus making boron carbide a wide-gap semiconductor. Furthermore, the spectra of Raman–active phonons indicate a pressure-dependent phasemore » transition in single-crystal natB4.3C boron carbide near 35 GPa., particularly related to structural changes in connection with the C-B-C chains, while the basic icosahedral structure remains largely unaffected.« less

Measurements and simulations of boron carbide as degrader material for proton therapy.

PubMed

Gerbershagen, Alexander; Baumgarten, Christian; Kiselev, Daniela; van der Meer, Robert; Risters, Yannic; Schippers, Marco

2016-07-21

We report on test measurements using boron carbide (B4C) as degrader material in comparison with the conventional graphite, which is currently used in many proton therapy degraders. Boron carbide is a material of lower average atomic weight and higher density than graphite. Calculations predict that, compared to graphite, the use of boron carbide results in a lower emittance behind the degrader due to the shorter degrader length. Downstream of the acceptance defining collimation system we expect a higher beam transmission, especially at low beam energies. This is of great interest in proton therapy applications as it allows either a reduction of the beam intensity extracted from the cyclotron leading to lower activation or a reduction of the treatment time. This paper summarizes the results of simulations and experiments carried out at the PROSCAN facility at the Paul Scherrer Institute(1). The simulations predict an increase in the transmitted beam current after the collimation system of approx. 30.5% for beam degradation from 250 to 84 MeV for a boron carbide degrader compared to graphite. The experiment carried out with a boron carbide block reducing the energy to 84 MeV yielded a transmission improvement of 37% compared with the graphite degrader set to that energy.

Dispersion toughened silicon carbon ceramics

DOEpatents

Wei, G.C.

1984-01-01

Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

Semiconducting boron carbide thin films: Structure, processing, and diode applications

NASA Astrophysics Data System (ADS)

Bao, Ruqiang

The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic performance and the accelerated lifetime test of betavoltaic devices. Structural analysis by X-ray diffraction and high resolution transmission electron microscopy showed that the prepared B4C thin films are amorphous. The presence of icosahedrons, which account for the radiation hardness of icosahedral boron rich solids, in the amorphous B4C thin films was supported by Fourier transform infrared spectroscopy. The pair distribution functions derived from selected area diffraction pattern of amorphous B 4C thin films showed that the short range order structure of amorphous B4C thin films is similar to beta-rhombohedral boron but with a shorter distance. The investigation of electrical properties of B4 C thin films showed that the resistivity of B4C thin films ranges from 695 O-cm to 9650 O-cm depending on the deposition temperature; the direct and indirect bandgaps for B4C thin films are 2.776 - 2.898 eV and 1.148 - 1.327 eV, respectively; the effective lifetime of excess charge carrier is close to 0.1 ms for B4C thin film deposited at room temperature and approximates to 1 ms for those deposited at 175 °C to 500 °C. Based on structural characterization and electrical properties of B4C thin films, a structural model of B4C thin films was proposed and supported by nanoindenter experiments, i.e., the hardness of thin films deposited at temperature in the range of 275 °C to 350 °C is lower than that of the films deposited at RT and 650 °C. Heterojunctions of B4C / n-Si (100) possessing photovoltaic response have been fabricated. The suitable deposition temperature for B 4C thin film to fabricate photovoltaic device is from 175 °C to 350 °C. When the Si substrate surface was not pre-cleaned before depositing B4C thin film, the B4C / n-Si (100) heterojunction has better photovoltaic responses, presumably because there were no sputter-produced defects on the surface of Si (100) substrate. Until now, the best achievable photovoltaic performance is B4C / n-Si (100) heterojunction with 200 nm thick B4C thin film when the Si (100) substrate surface was not pre-cleaned by RF sputtering. When this heterojunction was characterized using solar simulator with air mass 1.5 spectra, the short circuit current density is 1.484 mA/cm2, the open circuit voltage is about 0.389 V, and the power conversion efficiency is about 0.214 %. In addition, B5C thin films deposited by plasma enhanced chemical vapor deposition were used to make some of the devices studied in this dissertation. It was found that the Si-doped BC / n-Si (111) heterojunctions also demonstrates their photovoltaic and betavoltaic responses. Even after irradiated by a 120 keV electron beam to a fluence of 4.38x1017 electrons/cm 2, the heterojunctions still posses betavoltaic behavior and their responses to the incident irradiance density are similar to that before irradiation.

Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Airapetov, A. A.; Begrambekov, L. B., E-mail: lbb@plasma.mephi.ru; Buzhinskiy, O. I.

2015-12-15

A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400–1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

Invited Article: Indenter materials for high temperature nanoindentation

NASA Astrophysics Data System (ADS)

Wheeler, J. M.; Michler, J.

2013-10-01

As nanoindentation at high temperatures becomes increasingly popular, a review of indenter materials for usage at high temperatures is instructive for identifying appropriate indenter-sample materials combinations to prevent indenter loss or failure due to chemical reactions or wear during indentation. This is an important consideration for nanoindentation as extremely small volumes of reacted indenter material will have a significant effect on measurements. The high temperature hardness, elastic modulus, thermal properties, and chemical reactivities of diamond, boron carbide, silicon carbide, tungsten carbide, cubic boron nitride, and sapphire are discussed. Diamond and boron carbide show the best elevated temperature hardness, while tungsten carbide demonstrates the lowest chemical reactivity with the widest array of elements.

Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

DOEpatents

Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

2013-01-22

Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

Infiltration processing of boron carbide-, boron-, and boride-reactive metal cermets

DOEpatents

Halverson, Danny C.; Landingham, Richard L.

1988-01-01

A chemical pretreatment method is used to produce boron carbide-, boron-, and boride-reactive metal composites by an infiltration process. The boron carbide or other starting constituents, in powder form, are immersed in various alcohols, or other chemical agents, to change the surface chemistry of the starting constituents. The chemically treated starting constituents are consolidated into a porous ceramic precursor which is then infiltrated by molten aluminum or other metal by heating to wetting conditions. Chemical treatment of the starting constituents allows infiltration to full density. The infiltrated precursor is further heat treated to produce a tailorable microstructure. The process at low cost produces composites with improved characteristics, including increased toughness, strength.

Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

NASA Technical Reports Server (NTRS)

Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

2009-01-01

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Thermal conductivity behavior of boron carbides

NASA Technical Reports Server (NTRS)

Wood, C.; Zoltan, A.; Emin, D.; Gray, P. E.

1983-01-01

Knowledge of the thermal conductivity of boron carbides is necessary to evaluate its potential for high temperature thermoelectric energy conversion applications. The thermal diffusivity of hot pressed boron carbide B/sub 1-x/C/sub x/ samples as a function of composition, temperature and temperature cycling was measured. These data in concert with density and specific heat data yield the thermal conductivities of these materials. The results in terms of a structural model to explain the electrical transport data and novel mechanisms for thermal conduction are discussed.

Disorder and defects are not intrinsic to boron carbide

NASA Astrophysics Data System (ADS)

Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

2016-01-01

A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

Boron carbide nanowires: Synthesis and characterization

NASA Astrophysics Data System (ADS)

Guan, Zhe

Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a solid orthorhombic phase catalyst. The status of a catalyst depends mainly on temperature. (3) Observation of "invisible" defects in boron carbide nanowires. The planar defects can only be seen under a transmission electron microscope when the electron beam is within the defect plane. Furthermore, there are only two directions within that plane, along which the orientation of defect can be told and clear TEM results can be taken. The challenge is that the TEM sample holder is limited to tilt +/-30° in each direction. A theory was developed based on lattice calculation and simulation to tell the orientation of defect even not from those unique directions. Furthermore, it was tested by experimental data and proved to be successful. (4) Preliminary exploration of structure-transport property of as-synthesized boron carbide nanowires. In collaboration with experts in the field of thermal science, thermal transport properties of a few boron carbide nanowires were studied. All measured nanowires were either pre-characterized or post-characterized by TEM to reveal their structural information such as diameter, fault orientations and chemical composition. The obtained structural information was then analyzed together with measured thermal conductivity to establish a structure-transport property relation. Current data indicate that TF ones have a lower thermal conductivity, which is also diameter-dependent.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Investigation of the Kinetic Energy Characterization of Advanced Ceramics

DTIC Science & Technology

2015-04-01

of Science, under a US Army International Technology Center contract. These ceramic formulations were compared with standard armor-grade boron ...Experimental Methodology 1 3. Results and Discussion 4 3.1 Aluminum Performance Baseline 4 3.2 Ceramic Inspection 6 3.3 Boron Carbide 6 3.4 Silicon...Carbide 7 3.5 Boron Carbide–Aluminum Nitride 7 3.6 Boron Carbide–Vanadium Diboride 7 3.7 Titanium Nitride–Aluminum Nitride 8 3.8 Comparative

Quantifying the Effects of the Influence of a Tungsten Long-rod Projectile into Confined Ceramics at High-velocity Impact

DTIC Science & Technology

2008-01-29

be conducted to demonstrate how the confined, brittle samples behave. The study shows that silicon carbide and boron carbide are the optimal...Exposition on Advanced Ceramics and Composites - 27 JAN to 1 FEB 2008, Daytona Beach, FL, The original document contains color images. 14. ABSTRACT 15...specimens investigated were aluminum nitride, boron carbide, 9606 pyroceram, and silicon carbide. The confining sleeve was modeled with RHA and had a

Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivezhenko, Dina S., E-mail: dinylkaa@yandex.ru; Drobyaz, Ekaterina A., E-mail: ekaterina.drobyaz@yandex.ru; Bataev, Ivan A., E-mail: ivanbataev@ngs.ru

2015-10-27

An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to anmore » enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hushur, Anwar; Manghnani, Murli H.; Werheit, Helmut

Single-crystal B4.3C boron carbide is investigated concerning the pressure-dependence of optical properties and of Raman-active phonons up to ~70 GPa. The high concentration of structural defects determining the electronic properties of boron carbide at ambient conditions initially decrease and finally vanish with pressure increasing. We obtain this immediately from transparency photos, allowing to estimate the pressure-dependent variation of the absorption edge rapidly increasing around 55 GPa. Glass-like transparency at pressures exceeding 60 GPa indicate that the width of the band exceeds ~3.1 eV thus making boron carbide a wide-gap semiconductor. Furthermore, the spectra of Raman–active phonons indicate a pressure-dependent phasemore » transition in single-crystal natB4.3C boron carbide near 35 GPa., particularly related to structural changes in connection with the C-B-C chains, while the basic icosahedral structure remains largely unaffected.« less

Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

NASA Astrophysics Data System (ADS)

Krivezhenko, Dina S.; Drobyaz, Ekaterina A.; Bataev, Ivan A.; Chuchkova, Lyubov V.

2015-10-01

An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to an enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.

Effect of molybdenum, vanadium, boron on mechanical properties of high chromium white cast iron in as-cast condition

NASA Astrophysics Data System (ADS)

Nurjaman, F.; Sumardi, S.; Shofi, A.; Aryati, M.; Suharno, B.

2016-02-01

In this experiment, the effect of the addition carbide forming elements on high chromium white cast iron, such as molybdenum, vanadium and boron on its mechanical properties and microstructure was investigated. The high chromium white cast iron was produced by casting process and formed in 50 mm size of grinding balls with several compositions. Characterization of these grinding balls was conducted by using some testing methods, such as: chemical and microstructure analysis, hardness, and impact test. From the results, the addition of molybdenum, vanadium, and boron on high chromium white cast iron provided a significant improvement on its hardness, but reduced its toughness. Molybdenum induced fully austenitic matrix and Mo2C formation among eutectic M7C3 carbide. Vanadium was dissolved in the matrix and carbide. While boron was played a role to form fine eutectic carbide. Grinding balls with 1.89 C-13.1 Cr-1.32 Mo-1.36 V-0.00051 B in as-cast condition had the highest hardness, which was caused by finer structure of eutectic carbide, needle like structure (upper bainite) matrix, and martensite on its carbide boundary.

A study on the formation of solid state nanoscale materials using polyhedral borane compounds

NASA Astrophysics Data System (ADS)

Romero, Jennifer V.

The formation of boron containing materials using a variety of methods was explored. The pyrolysis of a metal boride precursor solution can be accomplished using a one-source method by combining TiCl4, B10H 14 and CH3CN in one reaction vessel and pyrolyzing it at temperatures above 900 °C. Amorphous dark blue colored films were obtained after the pyrolysis reactions. Well-defined spherical shaped grains or particles were observed by SEM. The amorphous films generated contained titanium, however, the determination of the boron content of the films was inconclusive. This one pot method making metal boride thin films has the advantage of being able to dictate the stoichiometry of the reactants. Another part of this work represents the first report of both the use of metal boride materials and the use of a titanium-based compound for the formation of nanotubes. This method provides a facile method for generating well-formed boron-containing carbon nanotubes in a "one-pot" process through an efficient aerosol process. The formation of metal boride corrosion resistant layers was also explored. It was shown that metallic substrates can be effectively boronized using paste mixtures containing boron carbide and borax. The formation of a Fe4B 2 iron boride phase was achieved, however, this iron boride phase does not give enough corrosion protection. The formation of a corrosion resistant metal boride coating with strong adhesion was accomplished by boronization of a thermal sprayed nickel layer on the surface of steel. Surfactants were explored as possible nanoreactors in which metal boride nanoparticles could be formed to use as nanotube growth catalyst via room temperature reaction. Different surfactants were used, but none of them successfully generated very well dispersed metal boride nanoparticles. Nanoparticles with varying shapes and sizes were generated which were highly amorphous. The carboxylic acid derivative of closo-C2B 10 cages was explored as a ligand in the hydrothermal preparation of coordination polymers with zinc salts. It was found that the stability of the cage is apparently insufficient under these conditions and cage degradation was observed. Consequently, a preliminary investigation of the preparation of dipyridyl derivatives of both the closo-C2B 10 and the closo-B12 cages was performed.

Penetration Resistance of Armor Ceramics: Dimensional Analysis and Property Correlations

DTIC Science & Technology

2015-08-01

been reported in experimental studies. Particular ceramics analyzed here are low- and high-purity alumina, aluminum nitride, boron carbide, silicon...analyzed here are low- and high-purity alumina, aluminum nitride, boron carbide, silicon carbide, and titanium diboride. Data for penetration depth...include high hardness, high elastic stiffness, high strengths (static/dynamic compressive, shear, and bending), and low density relative to armor steels

Development of Spacecraft Materials and Structures Fundamentals.

DTIC Science & Technology

1985-08-01

900. This is comparable to the dihedral angle observed in uranium dioxide’ ° and silicon carbide ,’ 2 which...necesjary and identify by bigich numberp FIELD GROUP I suB. GR. Boron carbide , sintering, grain growth, microstructure, microcracking, mechanical...Compacts of boron carbide powders with specific surface area >, 8 m2 / were sintered in argon at temperatures near 2200*C. Several of these powders were

Synergistic methods for the production of high-strength and low-cost boron carbide

NASA Astrophysics Data System (ADS)

Wiley, Charles Schenck

2011-12-01

Boron carbide (B4C) is a non-oxide ceramic in the same class of nonmetallic hard materials as silicon carbide and diamond. The high hardness, high elastic modulus and low density of B4C make it a nearly ideal material for personnel and vehicular armor. B4C plates formed via hot-pressing are currently issued to U.S. soldiers and have exhibited excellent performance; however, hot-pressed articles contain inherent processing defects and are limited to simple geometries such as low-curvature plates. Recent advances in the pressureless sintering of B4C have produced theoretically-dense and complex-shape articles that also exhibit superior ballistic performance. However, the cost of this material is currently high due to the powder shape, size, and size distribution that are required, which limits the economic feasibility of producing such a product. Additionally, the low fracture toughness of pure boron carbide may have resulted in historically lower transition velocities (the projectile velocity range at which armor begins to fail) than competing silicon carbide ceramics in high-velocity long-rod tungsten penetrator tests. Lower fracture toughness also limits multi-hit protection capability. Consequently, these requirements motivated research into methods for improving the densification and fracture toughness of inexpensive boron carbide composites that could result in the development of a superior armor material that would also be cost-competitive with other high-performance ceramics. The primary objective of this research was to study the effect of titanium and carbon additives on the sintering and mechanical properties of inexpensive B4C powders. The boron carbide powder examined in this study was a sub-micron (0.6 mum median particle size) boron carbide powder produced by H.C. Starck GmbH via a jet milling process. A carbon source in the form of phenolic resin, and titanium additives in the form of 32 nm and 0.9 mum TiO2 powders were selected. Parametric studies of sintering behavior were performed via high-temperature dilatometry in order to measure the in-situ sample contraction and thereby measure the influence of the additives and their amounts on the overall densification rate. Additionally, broad composition and sintering/post-HIPing studies followed by characterization and mechanical testing elucidated the effects of these additives on sample densification, microstructure de- velopment, and mechanical properties such as Vickers hardness and microindentation fracture toughness. Based upon this research, a process has been developed for the sintering of boron carbide that yielded end products with high relative densities (i.e., 100%, or theoretical density), microstructures with a fine (˜2-3 mum) grain size, and high Vickers microindentation hardness values. In addition to possessing these improved physical properties, the costs of producing this material were substantially lower (by a factor of 5 or more) than recently patented work on the pressureless sintering and post-HIPing of phase-pure boron carbide powder. This recently patented work developed out of our laboratory utilized an optimized powder distribution and yielded samples with high relative densities and high hardness values. The current work employed the use of titanium and carbon additives in specific ratios to activate the sintering of boron carbide powder possessing an approximately mono-modal particle size distribution. Upon heating to high temperatures, these additives produced fine-scale TiB2 and graphite inclusions that served to hinder grain growth and substantially improve overall sintered and post-HIPed densities when added in sufficient concentrations. The fine boron carbide grain size manifested as a result of these second phase inclusions caused a substantial increase in hardness; the highest hardness specimen yielded a hardness value (2884.5 kg/mm2) approaching that of phase-pure and theoretically-dense boron carbide (2939 kg/mm2). Additionally, the same high-hardness composition exhibited a noticeably higher fracture toughness (3.04 MPa˙m1/2) compared to phase-pure boron carbide (2.42 MPa˙m1/2), representing a 25.6% improvement. A potential consequence of this study would be the development of a superior armor material that is sufficiently affordable, allowing it to be incorporated into the general soldier's armor chassis.

Electron paramagnetic resonance of deep boron in silicon carbide

NASA Astrophysics Data System (ADS)

Baranov, P. G.; Mokhov, E. N.

1996-04-01

In this article we report the first EPR observation of deep boron centres in silicon carbide. A direct identification of the boron atom involved in the defect centre, considered as deep boron, has been established by the presence of a hyperfine interaction with 0268-1242/11/4/005/img1 and 0268-1242/11/4/005/img2 nuclei in isotope-enriched 6H-SiC:B crystals. Deep boron centres were shown from EPR spectra to have axial symmetry along the hexagonal axis. A correspondence between the EPR spectra and the luminescence, ODMR and DLTS spectra of deep boron centres has been indicated. The structural model for a deep boron centre as a boron - vacancy pair is presented and the evidence for bistable behaviour of deep boron centres is discussed.

Carbide/nitride grain refined rare earth-iron-boron permanent magnet and method of making

DOEpatents

McCallum, R.W.; Branagan, D.J.

1996-01-23

A method of making a permanent magnet is disclosed wherein (1) a melt is formed having a base alloy composition comprising RE, Fe and/or Co, and B (where RE is one or more rare earth elements) and (2) TR (where TR is a transition metal selected from at least one of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Al) and at least one of C and N are provided in the base alloy composition melt in substantially stoichiometric amounts to form a thermodynamically stable compound (e.g. TR carbide, nitride or carbonitride). The melt is rapidly solidified in a manner to form particulates having a substantially amorphous (metallic glass) structure and a dispersion of primary TRC, TRN and/or TRC/N precipitates. The amorphous particulates are heated above the crystallization temperature of the base alloy composition to nucleate and grow a hard magnetic phase to an optimum grain size and to form secondary TRC, TRN and/or TRC/N precipitates dispersed at grain boundaries. The crystallized particulates are consolidated at an elevated temperature to form a shape. During elevated temperature consolidation, the primary and secondary precipitates act to pin the grain boundaries and minimize deleterious grain growth that is harmful to magnetic properties. 33 figs.

Carbide/nitride grain refined rare earth-iron-boron permanent magnet and method of making

DOEpatents

McCallum, R. William; Branagan, Daniel J.

1996-01-23

A method of making a permanent magnet wherein 1) a melt is formed having a base alloy composition comprising RE, Fe and/or Co, and B (where RE is one or more rare earth elements) and 2) TR (where TR is a transition metal selected from at least one of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Al) and at least one of C and N are provided in the base alloy composition melt in substantially stoichiometric amounts to form a thermodynamically stable compound (e.g. TR carbide, nitride or carbonitride). The melt is rapidly solidified in a manner to form particulates having a substantially amorphous (metallic glass) structure and a dispersion of primary TRC, TRN and/or TRC/N precipitates. The amorphous particulates are heated above the crystallization temperature of the base alloy composition to nucleate and grow a hard magnetic phase to an optimum grain size and to form secondary TRC, TRN and/or TRC/N precipitates dispersed at grain boundaries. The crystallized particulates are consolidated at an elevated temperature to form a shape. During elevated temperature consolidation, the primary and secondary precipitates act to pin the grain boundaries and minimize deleterious grain growth that is harmful to magnetic properties.

Fluid flow phenomena in the generation of boron carbide suspensions in magnesium melts

NASA Technical Reports Server (NTRS)

Ilegbusi, O. J.; Szekely, J.

1988-01-01

A mathematical representation is developed for the behavior of moderately concentrated magnesium-boron carbide suspensions when subjected to electromagnetic stirring or mechanical agitation. A power-law relationship is employed for the apparent non-Newtonian viscosity of the suspension.

Energy release properties of amorphous boron and boron-based propellant primary combustion products

NASA Astrophysics Data System (ADS)

Liang, Daolun; Liu, Jianzhong; Xiao, Jinwu; Xi, Jianfei; Wang, Yang; Zhang, Yanwei; Zhou, Junhu

2015-07-01

The microstructure of amorphous boron and the primary combustion products of boron-based fuel-rich propellant (hereafter referred to as primary combustion products) was analyzed by scanning electron microscope. Composition analysis of the primary combustion products was carried out by X-ray diffraction and X-ray photoelectron spectroscopy. The energy release properties of amorphous boron and the primary combustion products were comparatively studied by laser ignition experimental system and thermogravimetry-differential scanning calorimetry. The primary combustion products contain B, C, Mg, Al, B4C, B13C2, BN, B2O3, NH4Cl, H2O, and so on. The energy release properties of primary combustion products are different from amorphous boron, significantly. The full-time spectral intensity of primary combustion products at a wavelength of 580 nm is ~2% lower than that of amorphous boron. The maximum spectral intensity of the former at full wave is ~5% higher than that of the latter. The ignition delay time of primary combustion products is ~150 ms shorter than that of amorphous boron, and the self-sustaining combustion time of the former is ~200 ms longer than that of the latter. The thermal oxidation process of amorphous boron involves water evaporation (weight loss) and boron oxidation (weight gain). The thermal oxidation process of primary combustion products involves two additional steps: NH4Cl decomposition (weight loss) and carbon oxidation (weight loss). CL-20 shows better combustion-supporting effect than KClO4 in both the laser ignition experiments and the thermal oxidation experiments.

Method of accurate thickness measurement of boron carbide coating on copper foil

DOEpatents

Lacy, Jeffrey L.; Regmi, Murari

2017-11-07

A method is disclosed of measuring the thickness of a thin coating on a substrate comprising dissolving the coating and substrate in a reagent and using the post-dissolution concentration of the coating in the reagent to calculate an effective thickness of the coating. The preferred method includes measuring non-conducting films on flexible and rough substrates, but other kinds of thin films can be measure by matching a reliable film-substrate dissolution technique. One preferred method includes determining the thickness of Boron Carbide films deposited on copper foil. The preferred method uses a standard technique known as inductively coupled plasma optical emission spectroscopy (ICPOES) to measure boron concentration in a liquid sample prepared by dissolving boron carbide films and the Copper substrates, preferably using a chemical etch known as ceric ammonium nitrate (CAN). Measured boron concentration values can then be calculated.

Structural models of increasing complexity for icosahedral boron carbide with compositions throughout the single-phase region from first principles

NASA Astrophysics Data System (ADS)

Ektarawong, A.; Simak, S. I.; Alling, B.

2018-05-01

We perform first-principles calculations to investigate the phase stability of boron carbide, concentrating on the recently proposed alternative structural models composed not only of the regularly studied B11Cp (CBC) and B12(CBC), but also of B12(CBCB) and B12( B4 ). We find that a combination of the four structural motifs can result in low-energy electron precise configurations of boron carbide. Among several considered configurations within the composition range of B10.5C and B4C , we identify in addition to the regularly studied B11Cp (CBC) at the composition of B4C two low-energy configurations, resulting in a new view of the B-C convex hull. Those are [B12 (CBC)]0.67[B12(B4)] 0.33 and [B12 (CBC)]0.67[ B12 (CBCB)]0.33, corresponding to compositions of B10.5C and B6.67C , respectively. As a consequence, B12(CBC) at the composition of B6.5C , previously suggested in the literature as a stable configuration of boron carbide, is no longer part of the B -C convex hull. By inspecting the electronic density of states as well as the elastic moduli, we find that the alternative models of boron carbide can provide a reasonably good description for electronic and elastic properties of the material in comparison with the experiments, highlighting the importance of considering B12(CBCB) and B12( B4 ), together with the previously proposed B11Cp (CBC) and B12(CBC), as the crucial ingredients for modeling boron carbide with compositions throughout the single-phase region.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metz, Lori A.; Friese, Judah I.; Finn, Erin C.

Critical assemblies provide one method of achieving a fast neutron spectrum that is close to a 235U fission-energy neutron spectrum for nuclear data measurements. Previous work has demonstrated the use of a natural boron carbide capsule for spectral-tailoring in a mixed spectrum reactor as an alternate and complementary method for performing fission-energy neutron experiments. Previous fission products measurements showed that the neutron spectrum achievable with natural boron carbide was not as hard as what can be achieved with critical assemblies. New measurements performed with the Washington State University TRIGA reactor using a boron carbide capsule 96% enriched in 10B formore » irradiations resulted in a neutron spectrum very similar to a critical assembly and a pure 235U fission spectrum. The current work describes an experiment involving a highly-enriched uranium target irradiated under the new 10B4C capsule. Fission product yields were measured following radiochemical separations and are presented here. Reactor dosimetry measurements for characterizing neutron spectra and fluence for the enriched boron carbide capsule and critical assemblies are also discussed.« less

Aluminum-titanium hydride-boron carbide composite provides lightweight neutron shield material

NASA Technical Reports Server (NTRS)

Poindexter, A. M.

1967-01-01

Inexpensive lightweight neutron shield material has high strength and ductility and withstands high internal heat generation rates without excessive thermal stress. This composite material combines structural and thermal properties of aluminum, neutron moderating properties of titanium hydride, and neutron absorbing characteristics of boron carbide.

Ceramic-bonded abrasive grinding tools

DOEpatents

Holcombe, C.E. Jr.; Gorin, A.H.; Seals, R.D.

1994-11-22

Abrasive grains such as boron carbide, silicon carbide, alumina, diamond, cubic boron nitride, and mullite are combined with a cement primarily comprised of zinc oxide and a reactive liquid setting agent and solidified into abrasive grinding tools. Such grinding tools are particularly suitable for grinding and polishing stone, such as marble and granite.

Ceramic-bonded abrasive grinding tools

DOEpatents

Holcombe, Jr., Cressie E.; Gorin, Andrew H.; Seals, Roland D.

1994-01-01

Abrasive grains such as boron carbide, silicon carbide, alumina, diamond, cubic boron nitride, and mullite are combined with a cement primarily comprised of zinc oxide and a reactive liquid setting agent and solidified into abrasive grinding tools. Such grinding tools are particularly suitable for grinding and polishing stone, such as marble and granite.

Local Atomic Arrangements and Band Structure of Boron Carbide.

PubMed

Rasim, Karsten; Ramlau, Reiner; Leithe-Jasper, Andreas; Mori, Takao; Burkhardt, Ulrich; Borrmann, Horst; Schnelle, Walter; Carbogno, Christian; Scheffler, Matthias; Grin, Yuri

2018-05-22

Boron carbide, the simple chemical combination of boron and carbon, is one of the best-known binary ceramic materials. Despite that, a coherent description of its crystal structure and physical properties resembles one of the most challenging problems in materials science. By combining ab initio computational studies, precise crystal structure determination from diffraction experiments, and state-of-the-art high-resolution transmission electron microscopy imaging, this concerted investigation reveals hitherto unknown local structure modifications together with the known structural alterations. The mixture of different local atomic arrangements within the real crystal structure reduces the electron deficiency of the pristine structure CBC+B 12 , answering the question about electron precise character of boron carbide and introducing new electronic states within the band gap, which allow a better understanding of physical properties. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

JAGUAR Procedures for Detonation Behavior of Explosives Containing Boron

NASA Astrophysics Data System (ADS)

Stiel, Leonard; Baker, Ernest; Capellos, Christos

2009-06-01

The JAGUAR product library was expanded to include boron and boron containing products. Relationships of the Murnaghan form for molar volumes and derived properties were implemented in JAGUAR. Available Hugoniot and static volumertic data were analyzed to obtain constants of the Murnaghan relationship for solid boron, boron oxide, boron nitride, boron carbide, and boric acid. Experimental melting points were also utilized with optimization procedures to obtain the constants of the volumetric relationships for liquid boron and boron oxide. Detonation velocities for HMX - boron mixtures calculated with these relationships using JAGUAR are in closer agreement with literature values at high initial densities for inert (unreacted) boron than with the completely reacted metal. These results indicate that boron mixtures may exhibit eigenvalue detonation behavior, as observed by aluminized combined effects explosives, with higher detonation velocities than would be achieved by a classical Chapman-Jouguet detonation. Analyses of calorimetric measurements for RDX - boron mixtures indicate that at high boron contents the formation of side products, including boron nitride and boron carbide, inhibits the energy output obtained from the detonation of the formulation.

Tunable carbon nanotube-tungsten carbide nanoparticles heterostructures by vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Min; Guo, Hongyan; Ge, Changchun

2014-05-14

A simple, versatile route for the synthesis of carbon nanotube (CNT)-tungsten carbide nanoparticles heterostructures was set up via vapor deposition process. For the first time, amorphous CNTs (α-CNTs) were used to immobilized tungsten carbide nanoparticles. By adjusting the synthesis and annealing temperature, α-CNTs/amorphous tungsten carbide, α-CNTs/W{sub 2}C, and CNTs/W{sub 2}C/WC heterostructures were prepared. This approach provides an efficient method to attach other metal carbides and other nanoparticles to carbon nanotubes with tunable properties.

Microwave coupler and method

DOEpatents

Holcombe, C.E.

1984-11-29

The present invention is directed to a microwave coupler for enhancing the heating or metallurgical treatment of materials within a cold-wall, rapidly heated cavity as provided by a microwave furnace. The coupling material of the present invention is an alpha-rhombohedral-boron-derivative-structure material such as boron carbide or boron silicide which can be appropriately positioned as a susceptor within the furnace to heat other material or be in powder particulate form so that composites and structures of boron carbide such as cutting tools, grinding wheels and the like can be rapidly and efficiently formed within microwave furnaces.

Microwave coupler and method

DOEpatents

Holcombe, Cressie E.

1985-01-01

The present invention is directed to a microwave coupler for enhancing the heating or metallurgical treatment of materials within a cold-wall, rapidly heated cavity as provided by a microwave furnace. The coupling material of the present invention is an alpha-rhombohedral-boron-derivative-structure material such as boron carbide or boron silicide which can be appropriately positioned as a susceptor within the furnace to heat other material or be in powder particulate form so that composites and structures of boron carbide such as cutting tools, grinding wheels and the like can be rapidly and efficiently formed within microwave furnaces.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

2002-01-01

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

1999-01-01

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

The Physics and Chemistry of carbides, Nitrides and Borides. Volume 185

DTIC Science & Technology

1990-01-01

and C-B-C chains [15,17]. Clearly, the use of boron-rich solids as electronic materials will place new demands on the quality of materials. In this...first heated in a pyrolytic boron nitride (PBN) crucible ( Union Carbide Corp.) under high vacuum (< 50 mTorr) to 1900°C. This removed surface...contamination of the sample. The powders were loaded into a graphite die with a high-purity BN die liner ( Union Carbide Grade HBC) with inner diameter of 3/8

Novel semiconducting boron carbide/pyridine polymers for neutron detection at zero bias

NASA Astrophysics Data System (ADS)

Echeverría, Elena; James, Robinson; Chiluwal, Umesh; Pasquale, Frank L.; Colón Santana, Juan A.; Gapfizi, Richard; Tae, Jae-Do; Driver, M. Sky; Enders, A.; Kelber, Jeffry A.; Dowben, P. A.

2015-01-01

Thin films containing aromatic pyridine moieties bonded to boron, in the partially dehydrogenated boron-rich icosahedra (B10C2HX), prove to be an effective material for neutron detection applications when deposited on n-doped (100) silicon substrates. The characteristic I-V curves for the heterojunction diodes exhibit strong rectification and largely unperturbed normalized reverse bias leakage currents with increasing pyridine content. The neutron capture generated pulses from these heterojunction diodes were obtained at zero bias voltage although without the signatures of complete electron-hole collection. These results suggest that modifications to boron carbide may result in better neutron voltaic materials.

Morphological transformations of BNCO nanomaterials: Role of intermediates

NASA Astrophysics Data System (ADS)

Wang, B. B.; Qu, X. L.; Zhu, M. K.; Levchenko, I.; Baranov, O.; Zhong, X. X.; Xu, S.; Ostrikov, K.

2018-06-01

Highly controllable structural transformation of various doped carbon and boron nitride nanomaterials have been achieved with the perspective of their application in microelectronics, optoelectronics, energy devices and catalytic reactions. Specifically, the syntheses of one-dimensional (1D) boron and nitrogen co-doped tube-like carbon nanorods and 2D vertical carbon and oxygen co-doped boron nitride nanosheets on silicon coated with gold films in N2-H2 plasma was demonstrated. During the synthesis of nanomaterials, boron carbide was used as carbon and boron sources. The results of characterizations by scanning and transmission electron microscopes, as well as micro-Raman and X-ray photoelectron spectroscopes indicate that the formation of different nanomaterials relates to the growth temperature and quantity of boron carbide. Specifically, 1D tube-like carbon nanorods doped with boron and nitrogen are formed at ∼910 °C using a small quantity of boron carbide, while 2D vertical boron nitride nanosheets doped with carbon and oxygen are grown at ∼870 °C using a large quantity of boron carbide. These studies indicate that the behaviors of a reactive intermediate product B2O3 on surfaces of Au nanoparticles play an important role in the formation of different nanomaterials, i.e., whether the B2O3 molecules deposited on Au nanoparticles are desorbed mainly determines the formation of different nanomaterials. The formation of 2D vertical carbon and oxygen co-doped boron nitride nanosheets is related to the high growth rate of edges of nanosheets. Furthermore, the photoluminescence (PL) properties of 1D boron and nitrogen co-doped tube-like carbon nanorods and 2D vertical carbon and oxygen co-doped boron nitride nanosheets were studied at room temperature. The PL results show that all the nanomaterials generate the ultraviolet, blue, green and red PL bands, but the 2D vertical carbon and oxygen co-doped boron nitride nanosheets emit more and stronger PL bands than the 1D boron and nitrogen co-doped tube-like carbon nanorods. The significant differences in the PL properties can be attributed to different carbon structures in these nanomaterials. These achievements can be used to synthesize and control the structures of nanomaterials and contribute to the development of the next generation optoelectronic nanodevices based on 1D and 2D nanomaterials.

Amorphous silicon carbide coatings for extreme ultraviolet optics

NASA Technical Reports Server (NTRS)

Kortright, J. B.; Windt, David L.

1988-01-01

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix

NASA Astrophysics Data System (ADS)

Coscia, U.; Ambrosone, G.; Basa, D. K.

2008-03-01

The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity.

High Purity and Yield of Boron Nitride Nanotubes Using Amorphous Boron and a Nozzle-Type Reactor

PubMed Central

Kim, Jaewoo; Seo, Duckbong; Yoo, Jeseung; Jeong, Wanseop; Seo, Young-Soo; Kim, Jaeyong

2014-01-01

Enhancement of the production yield of boron nitride nanotubes (BNNTs) with high purity was achieved using an amorphous boron-based precursor and a nozzle-type reactor. Use of a mixture of amorphous boron and Fe decreases the milling time for the preparation of the precursor for BNNTs synthesis, as well as the Fe impurity contained in the B/Fe interdiffused precursor nanoparticles by using a simple purification process. We also explored a nozzle-type reactor that increased the production yield of BNNTs compared to a conventional flow-through reactor. By using a nozzle-type reactor with amorphous boron-based precursor, the weight of the BNNTs sample after annealing was increased as much as 2.5-times with much less impurities compared to the case for the flow-through reactor with the crystalline boron-based precursor. Under the same experimental conditions, the yield and quantity of BNNTs were estimated as much as ~70% and ~1.15 g/batch for the former, while they are ~54% and 0.78 g/batch for the latter. PMID:28788161

High Purity and Yield of Boron Nitride Nanotubes Using Amorphous Boron and a Nozzle-Type Reactor.

PubMed

Kim, Jaewoo; Seo, Duckbong; Yoo, Jeseung; Jeong, Wanseop; Seo, Young-Soo; Kim, Jaeyong

2014-08-11

Enhancement of the production yield of boron nitride nanotubes (BNNTs) with high purity was achieved using an amorphous boron-based precursor and a nozzle-type reactor. Use of a mixture of amorphous boron and Fe decreases the milling time for the preparation of the precursor for BNNTs synthesis, as well as the Fe impurity contained in the B/Fe interdiffused precursor nanoparticles by using a simple purification process. We also explored a nozzle-type reactor that increased the production yield of BNNTs compared to a conventional flow-through reactor. By using a nozzle-type reactor with amorphous boron-based precursor, the weight of the BNNTs sample after annealing was increased as much as 2.5-times with much less impurities compared to the case for the flow-through reactor with the crystalline boron-based precursor. Under the same experimental conditions, the yield and quantity of BNNTs were estimated as much as ~70% and ~1.15 g/batch for the former, while they are ~54% and 0.78 g/batch for the latter.

Evaluation of Aluminum-Boron Carbide Neutron Absorbing Materials for Interim Storage of Used Nuclear Fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lumin; Wierschke, Jonathan Brett

2015-04-08

The objective of this work was to understand the corrosion behavior of Boral® and Bortec® neutron absorbers over long-term deployment in a used nuclear fuel dry cask storage environment. Corrosion effects were accelerated by flowing humidified argon through an autoclave at temperatures up to 570°C. Test results show little corrosion of the aluminum matrix but that boron is leaching out of the samples. Initial tests performed at 400 and 570°C were hampered by reduced flow caused by the rapid build-up of solid deposits in the outlet lines. Analysis of the deposits by XRD shows that the deposits are comprised ofmore » boron trioxide and sassolite (H 3BO 3). The collection of boron- containing compounds in the outlet lines indicated that boron was being released from the samples. Observation of the exposed samples using SEM and optical microscopy show the growth of new phases in the samples. These phases were most prominent in Bortec® samples exposed at 570°C. Samples of Boral® exposed at 570°C showed minimal new phase formation but showed nearly the complete loss of boron carbide particles. Boron carbide loss was also significant in Boral samples at 400°C. However, at 400°C phases similar to those found in Bortec® were observed. The rapid loss of the boron carbide particles in the Boral® is suspected to inhibit the formation of the new secondary phases. However, Material samples in an actual dry cask environment would be exposed to temperatures closer to 300°C and less water than the lowest test. The results from this study conclude that at the temperature and humidity levels present in a dry cask environment, corrosion and boron leaching will have no effect on the performance of Boral® and Bortec® to maintain criticality control.« less

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Method for fabricating boron carbide articles

DOEpatents

Ardary, Zane L.; Reynolds, Carl D.

1980-01-01

The present invention is directed to the fabrication of boron carbide articles having length-to-diameter or width ratios greater than 2 to 1. The process of the present invention is practiced by the steps comprising hot pressing boron carbide powder into article segments or portions in which the segments have a length-to-diameter or width ratio less than 1.5, aligning a plurality of the initially hot-pressed segments in a hot-pressing die with the end surfaces of the segments placed in intimate contact with one another, and then hot pressing the aligned segments into an article of the desired configuration. The resulting article exhibits essentially uniform density throughout the structure with the bonds between the segments being equivalent in hardness, strength, and density to the remainder of the article.

Compatibility of refractory materials for nuclear reactor poison control systems

NASA Technical Reports Server (NTRS)

Sinclair, J. H.

1974-01-01

Metal-clad poison rods have been considered for the control system of an advanced space power reactor concept studied at the NASA Lewis Research Center. Such control rods may be required to operate at temperatures of about 140O C. Selected poison materials (including boron carbide and the diborides of zirconium, hafnium, and tantalum) were subjected to 1000-hour screening tests in contact with candidate refractory metal cladding materials (including tungsten and alloys of tantalum, niobium, and molybdenum) to assess the compatibility of these materials combinations at the temperatures of interest. Zirconium and hafnium diborides were compatible with refractory metals at 1400 C, but boron carbide and tantalum diboride reacted with the refractory metals at this temperature. Zirconium diboride also showed promise as a reaction barrier between boron carbide and tungsten.

The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

NASA Astrophysics Data System (ADS)

Ivanov, Yuri; Tolkachev, Oleg; Petyukevich, Maria; Teresov, Anton; Ivanova, Olga; Ikonnikova, Irina; Polisadova, Valentina

2016-01-01

The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm2, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.

Thermal neutron shield and method of manufacture

DOEpatents

Metzger, Bert Clayton; Brindza, Paul Daniel

2014-03-04

A thermal neutron shield comprising boron shielding panels with a high percentage of the element Boron. The panel is least 46% Boron by weight which maximizes the effectiveness of the shielding against thermal neutrons. The accompanying method discloses the manufacture of boron shielding panels which includes enriching the pre-cursor mixture with varying grit sizes of Boron Carbide.

Amorphous boron gasket in diamond anvil cell research

NASA Astrophysics Data System (ADS)

Lin, Jung-Fu; Shu, Jinfu; Mao, Ho-kwang; Hemley, Russell J.; Shen, Guoyin

2003-11-01

Recent advances in high-pressure diamond anvil cell experiments include high-energy synchrotron x-ray techniques as well as new cell designs and gasketing procedures. The success of high-pressure experiments usually depends on a well-prepared sample, in which the gasket plays an important role. Various gasket materials such as diamond, beryllium, rhenium, and stainless steel have been used. Here we introduce amorphous boron as another gasket material in high-pressure diamond anvil cell experiments. We have applied the boron gasket for laser-heating x-ray diffraction, radial x-ray diffraction, nuclear resonant inelastic x-ray scattering, and inelastic x-ray scattering. The high shear strength of the amorphous boron maximizes the thickness of the sample chamber and increases the pressure homogeneity, improving the quality of high-pressure data. Use of amorphous boron avoids unwanted x-ray diffraction peaks and reduces the absorption of incident and x rays exiting the gasket material. The high quality of the diffraction patterns makes it possible to refine the cell parameters with powder x-ray diffraction data under high pressure and high temperature. The reactivity of boron prevents its use at high temperatures, however. When heated, boron may also react with the specimen to produce unwanted phases. The relatively porous boron starting material at ambient conditions also poses some challenges for sample preparation.

Advanced Boron Carbide-Based Visual Obscurants for Military Smoke Grenades

DTIC Science & Technology

2014-07-13

determine volume-based diameter distributions of aqueous boron carbide suspensions. Potassium nitrate (MIL-P-156B, 15 μm) and potassium chloride (−50... Potassium chloride was found to be particularly effective in this role. The combustion of certain ternary B4C/KNO3/KCl mixtures (such Distribution A... of unconsolidated mixtures. Five wet binder systems were therefore evaluated. Polyacrylate elastomer and nitro- cellulose (NC) were applied as

Structural modifications induced by ion irradiation and temperature in boron carbide B4C

NASA Astrophysics Data System (ADS)

Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, J.; Pradeilles, N.; Rapaud, O.; Maître, A.; Gosset, D.

2015-12-01

Already used as neutron absorber in the current French nuclear reactors, boron carbide (B4C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B4C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (Se ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B4C structure under irradiation.

Evaluation of Shielding Performance for Newly Developed Composite Materials

NASA Astrophysics Data System (ADS)

Evans, Beren Richard

This work details an investigation into the contributing factors behind the success of newly developed composite neutron shield materials. Monte Carlo simulation methods were utilized to assess the neutron shielding capabilities and secondary radiation production characteristics of aluminum boron carbide, tungsten boron carbide, bismuth borosilicate glass, and Metathene within various neutron energy spectra. Shielding performance and secondary radiation data suggested that tungsten boron carbide was the most effective composite material. An analysis of the macroscopic cross-section contributions from constituent materials and interaction mechanisms was then performed in an attempt to determine the reasons for tungsten boron carbide's success over the other investigated materials. This analysis determined that there was a positive correlation between a non-elastic interaction contribution towards a material's total cross-section and shielding performance within the thermal and epi-thermal energy regimes. This finding was assumed to be a result of the boron-10 absorption reaction. The analysis also determined that within the faster energy regions, materials featuring higher non-elastic interaction contributions were comparable to those exhibiting primarily elastic scattering via low Z elements. This allowed for the conclusion that composite shield success within higher energy neutron spectra does not necessitate the use elastic scattering via low Z elements. These findings suggest that the inclusion of materials featuring high thermal absorption properties is more critical to composite neutron shield performance than the presence of constituent materials more inclined to maximize elastic scattering energy loss.

Hot isostatic pressing of silicon nitride with boron nitride, boron carbide, and carbon additions

NASA Technical Reports Server (NTRS)

Mieskowski, Diane M.; Sanders, William A.

1989-01-01

Si3N4 test bars containing additions of BN, B4C, and C, were hot isostatically pressed in Ta cladding at 1900 and 2050 C to 98.9 percent to 99.5 percent theoretical density. Room-temperature strength data on specimens containing 2 wt pct BN and 0.5 wt pct C were comparable to data obtained for Si3N4 sintered with Y2O3, Y2O3 and Al2O3, or ZrO2. The 1370 C strengths were less than those obtained for additions of Y2O3 or ZrO2 but greater than those obtained from a combination of Y2O3 and Al2O3. SEM fractography indicated that, as with other types of Si3N4, room-temperature strength was controlled by processing flaws. The decrease in strength at 1370 C was typical of Si3N4 having an amorphous grain-boundary phase. The primary advantage of nonoxide additions appears to be in facilitating specimen removal from the Ta cladding.

Thermal neutron shield and method of manufacture

DOEpatents

Brindza, Paul Daniel; Metzger, Bert Clayton

2013-05-28

A thermal neutron shield comprising concrete with a high percentage of the element Boron. The concrete is least 54% Boron by weight which maximizes the effectiveness of the shielding against thermal neutrons. The accompanying method discloses the manufacture of Boron loaded concrete which includes enriching the concrete mixture with varying grit sizes of Boron Carbide.

Hydrothermal development and characterization of the wear-resistant boron carbide from Pandanus: a natural carbon precursor

NASA Astrophysics Data System (ADS)

Saritha Devi, H. V.; Swapna, M. S.; Ambadas, G.; Sankararaman, S.

2018-04-01

Boron carbide (B4C) is a prominent semiconducting material that finds applications in the field of science and technology. The excellent physical, thermal and electronic properties make it suitable as ceramic armor, wear-resistant, lens polisher and neutron absorber in the nuclear industry. The existing methods of synthesis of boron carbide involve the use of toxic chemicals that adversely affect the environment. In the present work, we report for the first time the use of the hydrothermal method, for converting the cellulose from Pandanus leaves as the carbon precursor for the synthesis of B4C. The carbon precursor is changed into porous functionalized carbon by treating with sodium borohydride (NaBH4), followed by treating with boric acid to obtain B4C. The samples are characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared, Raman, photoluminescent and Ultraviolet-Visible absorption spectroscopy. The formation of B4C from natural carbon source— Pandanus presents an eco-friendly, economic and non-toxic approach for the synthesis of refractory carbides.

Equation of state and pressure induced amorphization of beta-boron from X-ray measurements up to 100 GPa.

PubMed

Sanz, Delia Nieto; Loubeyre, Paul; Mezouar, Mohamed

2002-12-09

The equation of state of boron has been measured up to 100 GPa by single-crystal x-ray diffraction with helium as the pressure transmitting medium. Rhombohedral beta-boron is the stable structure up to 100 GPa under hydrostatic conditions. Nonhydrostatic stress stabilizes a different rhombohedral structure. At about 100 GPa a pressure-induced amorphization is observed. The amorphous phase can be quenched to ambient pressure. An explanation is proposed based on the different stability under pressure between intraicosahedra and intericosahedra bonds.

Hydrogenated nanostructure boron doped amorphous carbon films by DC bias

NASA Astrophysics Data System (ADS)

Ishak, A.; Dayana, K.; Saurdi, I.; Malek, M. F.; Rusop, M.

2018-03-01

Hydrogenated nanostructure-boron doped amorphous carbon thin film carbon was deposited at different negative bias using custom-made deposition bias assisted-CVD. Solid of boron and palm oil were used as dopant and carbon source, respectively. The hydrogenated nanostructure amorphous films were characterized by Field emission scanning electron microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, while the photo-response studies of thin film is done by I-V measurement under light measurement. The results showed the carbon film were in nanostructure with hydrogen and boron might be incorporated in the film. The Raman spectra observed the increase of upward shift of D and G peaks as negative bias increased which related to the structural change as boron incorporated in carbon network. These structural changes were further correlated with photo-response study and the results obtained are discussed and compared.

Production and Characterization of Bulk MgB2 Material made by the Combination of Crystalline and Carbon Coated Amorphous Boron Powders

NASA Astrophysics Data System (ADS)

Hiroki, K.; Muralidhar, M.; Koblischka, M. R.; Murakami, M.

2017-07-01

The object of this investigation is to reduce the cost of bulk production and in the same time to increase the critical current performance of bulk MgB2 material. High-purity commercial powders of Mg metal (99.9% purity) and two types of crystalline (99% purity) and 16.5 wt% carbon-coated, nanometer-sized amorphous boron powders (98.5% purity) were mixed in a nominal composition of MgB2 to reduce the boron cost and to see the effect on the superconducting and magnetic properties. Several samples were produced mixing the crystalline boron and carbon-coated, nanometer-sized amorphous boron powders in varying ratios (50:50, 60:40, 70:30, 80:20, 90:10) and synthesized using a single-step process using the solid state reaction around 800 °C for 3 h in pure argon atmosphere. The magnetization measurements exhibited a sharp superconducting transition temperature with T c, onset around 38.6 K to 37.2 K for the bulk samples prepared utilizing the mixture of crystalline boron and 16.5% carbon-coated amorphous boron. The critical current density at higher magnetic field was improved with addition of carbon-coated boron to crystalline boron in a ratio of 80:20. The highest self-field Jc around 215,000 A/cm2 and 37,000 A/cm2 were recorded at 20 K, self-field and 2 T for the sample with a ratio of 80:10. The present results clearly demonstrate that the bulk MgB2 performance can be improved by adding carbon-coated nano boron to crystalline boron, which will be attractive to reduce the cost of bulk MgB2 material for several industrial applications.

Effects of configurational disorder on the elastic properties of icosahedral boron-rich alloys based on B6O, B13C2, and B4C, and their mixing thermodynamics

NASA Astrophysics Data System (ADS)

Ektarawong, A.; Simak, S. I.; Hultman, L.; Birch, J.; Tasnádi, F.; Wang, F.; Alling, B.

2016-04-01

The elastic properties of alloys between boron suboxide (B6O) and boron carbide (B13C2), denoted by (B6O)1-x(B13C2)x, as well as boron carbide with variable carbon content, ranging from B13C2 to B4C are calculated from first-principles. Furthermore, the mixing thermodynamics of (B6O)1-x(B13C2)x is studied. A superatom-special quasirandom structure approach is used for modeling different atomic configurations, in which effects of configurational disorder between the carbide and suboxide structural units, as well as between boron and carbon atoms within the units, are taken into account. Elastic properties calculations demonstrate that configurational disorder in B13C2, where a part of the C atoms in the CBC chains substitute for B atoms in the B12 icosahedra, drastically increase the Young's and shear modulus, as compared to an atomically ordered state, B12(CBC). These calculated elastic moduli of the disordered state are in excellent agreement with experiments. Configurational disorder between boron and carbon can also explain the experimentally observed almost constant elastic moduli of boron carbide as the carbon content is changed from B4C to B13C2. The elastic moduli of the (B6O)1-x(B13C2)x system are also practically unchanged with composition if boron-carbon disorder is taken into account. By investigating the mixing thermodynamics of the alloys, in which the Gibbs free energy is determined within the mean-field approximation for the configurational entropy, we outline the pseudo-binary phase diagram of (B6O)1-x(B13C2)x. The phase diagram reveals the existence of a miscibility gap at all temperatures up to the melting point. Also, the coexistence of B6O-rich as well as ordered or disordered B13C2-rich domains in the material prepared through equilibrium routes is predicted.

Method of making silicon carbide-silicon composite having improved oxidation resistance

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2002-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Silicon carbide-silicon composite having improved oxidation resistance and method of making

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

1999-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Boron Carbide as a Barium-Free Green Light Emitter and Burn Rate Modifier in Pyrotechnics

DTIC Science & Technology

2011-05-09

We thank the US Army and Picatinny Arsenal, NJ for funding this work. Communications 4624 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim Angew...Chem. Int. Ed. 2011 , 50, 4624 –4626 Report Documentation Page Form ApprovedOMB No. 0704-0188 Public reporting burden for the collection of information is...control number. 1. REPORT DATE 30 JUN 2011 2. REPORT TYPE 3. DATES COVERED 4. TITLE AND SUBTITLE Boron Carbide as a Barium-Free Green Light

Optimizing Grain Boundary Complexions to Produce Dense Pressure-Less Sintered Boron Carbide (B4C)

DTIC Science & Technology

2008-11-14

discontinuous distribution of the yttria. At this stage it is difficult to determine if the discontinuity is genuine or results from dewetting upon cooling...sample. However, the tendency of the film to form beads indicates a dewetting behavior. The weak interface between the yttria and the boron carbide...conform to the dewetting behavior. There is a possibility of a complexion transition as the sample is cooled down in the furnace. At high temperature the

Attenuation of Neutron and Gamma Radiation by a Composite Material Based on Modified Titanium Hydride with a Varied Boron Content

NASA Astrophysics Data System (ADS)

Yastrebinskii, R. N.

2018-04-01

The investigations on estimating the attenuation of capture gamma radiation by a composite neutron-shielding material based on modified titanium hydride and Portland cement with a varied amount of boron carbide are performed. The results of calculations demonstrate that an introduction of boron into this material enables significantly decreasing the thermal neutron flux density and hence the levels of capture gamma radiation. In particular, after introducing 1- 5 wt.% boron carbide into the material, the thermal neutron flux density on a 10 cm-thick layer is reduced by 11 to 176 factors, and the capture gamma dose rate - from 4 to 9 times, respectively. The difference in the degree of reduction in these functionals is attributed to the presence of capture gamma radiation in the epithermal region of the neutron spectrum.

Reactive Fusion Welding for Ultra-High Temperature Ceramic Composite Joining

DTIC Science & Technology

2015-03-16

Titanium diboride TiC-Titanium carbide C-Carbon SiC - Silicon carbide B4C-Boron carbide 67 W-Tungsten WC-Tungsten carbide ZrB2-20ZrC-ZrB2...ceramics with a nominal carbide content of 20 vol% were prepared. Starting powders were mechanically mixed by ball milling ZrB2 (H.C. Starck; Grade B...0.50 wt%, or ~1.5 vol%. Milling was carried out in acetone for 2 hours using tungsten carbide media. After milling, the powder slurry was dried

Tribo-mechanical and electrical properties of boron-containing coatings

NASA Astrophysics Data System (ADS)

Qian, Jincheng

The development of new hard protective coatings with advanced performance is very important for progress in a variety of scientific and industrial fields. Application of hard protective coatings can significantly improve the performance of parts and components, extend their service life, and save energy in many industrial applications including aerospace, automotive, manufacturing, and other industries. In addition, the multifunctionality of protective coatings is also required in many other application fields such as optics, microelectronics, biomedical, magnetic storage media, etc. Therefore, protective coatings with enhanced tribo-mechanical and corrosion properties as well as other functions are in demand. The coating characteristics can be adjusted by controlling the microstructure at different scales. For example, films with nanostructures, such as superlattice, nanocolumn, and nanocomposite systems, exhibit distinctive characteristics compared to single-phase materials. They show superior tribo-mechanical properties due to the presence of strong interfaces, and different functions can be achieved due to the multi-phase characteristics. Boron-containing materials with their excellent mechanical properties and interesting electronic characteristics are good candidates for functional hard protective coatings. For instance, cubic boron nitride (c-BN), boron carbide (B1-xCx), and titanium diboride (TiB 2) are well known for their high hardness, high thermal stability, and high chemical inertness. An interesting example is the boron carbon nitride (BCN) compound that possesses many attractive properties because its structure is similar to that of carbon (graphite and diamond) and of boron nitride (BN in hexagonal and cubic phases). The main goal of this work is to further develop the family of Boron-containing films including B1-xCx, Ti-B-C, and BCN films fabricated by magnetron sputtering, and to enhance their performance by controlling their microstructure on the nanoscale. Their tribo-mechanical, corrosion, and electrical properties are studied in relation to the composition and microstructure, aiming at enhancing their performance for multi-functional protective coating applications via microstructural design. First, B1-xCx (0 < x < 1) films with tailored tribo-mechanical properties were deposited by magnetron sputtering using one graphite and two boron targets. The hardness of the B1-xC x films was found to reach 25 GPa both for boron-rich and carbon-rich films, and the friction coefficient and wear rate can be adjusted from 0.66 to 0.13 and from 6.4x10-5 mm3/Nm to 1.3x10 -7 mm3/Nm, respectively, by changing the carbon content from 19 to 76 at.%. The hardness variation is closely related to the microstructure, and the low friction and wear rate of the B0.24C0.76 film are due to the high portion of an amorphous carbon phase. Moreover, application of the B0.81C0.19 film improves the corrosion resistance of the M2 steel substrate significantly, indicated by the decrease of the corrosion current by almost four orders of magnitude. Based on the optimization of the B1-xCx films, nanostructured Ti-B-C films with different compositions were deposited by adding titanium by simultaneously sputtering a titanium diboride target. We found that the film microstructure features TiB2 nanocrystallites embedded in an amorphous boron carbide matrix. The film hardness varies from 33 to 42 GPa with different titanium contents, which is related to the changes in microstructure, namely, the size and concentration of the TiB2 nanocrystallites. The friction coefficient and wear rate are in the ranges of 0.37-0.73 and of 3.3x10-6-5.7x10-5 mm3/Nm, respectively, which are affected by the mechanical properties and the surface chemical states of the films. By applying the Ti-B-C films, the corrosion resistance of the M2 steel substrate is significantly enhanced as documented by a reduction of the corrosion current density by two orders of magnitude. BCN films were synthesized by magnetron sputtering using a single B 4C target in an N2: Ar gas mixture. The BCN films exhibit an amorphous structure and contain a mixture of B-C, B-N, and C-N bonds. The films show p-type conductivity with an optical band gap of 1.0 eV. Subsequently, ZnO nanorods were grown on the BCN films using hydrothermal synthesis to form BCN/ZnO nanorods p-n heterojunctions. The performance of the junctions is evaluated by the I-V characterization, which shows a rectification behavior with a rectification ratio of 1500 at the bias voltages of +/-5 V.

B{sub 4}C protective coating under irradiation by QSPA-T intensive plasma fluxes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buzhinskij, O. I.; Barsuk, V. A.; Begrambekov, L. B., E-mail: lbb@plasma.mephi.ru

The effect of the QSPA-T pulsed plasma irradiation on the crystalline boron carbide B{sub 4}C coating was examined. The duration of the rectangular plasma pulses was 0.5 ms with an interval of 5–10 min between pulses. The maximum power density in the central part of plasma stream was 1 GW/m{sup 2}. The coating thickness varied from 20 to 40 μm on different surface areas. Modification of the surface layers and transformation of the coating at elevated temperature under plasma pulse irradiation during four successive series of impulses are described. It is shown that the boron carbide coating withstood the fullmore » cycle of tests under irradiation with 100 plasma pulses with peak power density of 1GW/m{sup 2}. Constitutive surface deterioration was not detected and the boron carbide coating kept crystal structure B{sub 4}C throughout the irradiation zone at the surface depth no less 2 μm.« less

Amorphous Carbon-Boron Nitride Nanotube Hybrids

NASA Technical Reports Server (NTRS)

Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

2016-01-01

A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

Emission of blue light from hydrogenated amorphous silicon carbide

NASA Astrophysics Data System (ADS)

Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

1994-04-01

THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

New high boron content polyborane precursors to advanced ceramic materials: New syntheses, new applications

NASA Astrophysics Data System (ADS)

Guron, Marta

There is a need for new synthetic routes to high boron content materials for applications as polymeric precursors to ceramics, as well as in neutron shielding and potential medical applications. To this end, new ruthenium-catalyzed olefin metathesis routes have been devised to form new complex polyboranes and polymeric species. Metathesis of di-alkenyl substituted o-carboranes allowed the synthesis of ring-closed products fused to the carborane cage, many of which are new compounds and one that offers a superior synthetic method to one previously published. Acyclic diene metathesis of di-alkenyl substituted m-carboranes resulted in the formation of new main-chain carborane-containing polymers of modest molecular weights. Due to their extremely low char yields, and in order to explore other metathesis routes, ring opening metathesis polymerization (ROMP) was used to generate the first examples of poly(norbornenyl- o-carboranes). Monomer synthesis was achieved via a two-step process, incorporating Ti-catalyzed hydroboration to make 6-(5-norbornenyl)-decaborane, followed by alkyne insertion in ionic liquid media to achieve 1,2-R2 -3-norbornenyl o-carborane species. The monomers were then polymerized using ROMP to afford several examples of poly(norbornenyl- o-carboranes) with relatively high molecular weights. One such polymer, [1-Ph, 3-(=CH2-C5H7-CH2=)-1,2-C 2B10H10]n, had a char yield very close to the theoretical char yield of 44%. Upon random copolymerization with poly(6-(5-norbornenyl) decaborane), char yields significantly increased to 80%, but this number was well above the theoretical value implicating the formation of a boron-carbide/carbon ceramic. Finally, applications of polyboranes were explored via polymer blends toward the synthesis of ceramic composites and the use of polymer precursors as reagents for potential ultra high temperature ceramic applications. Upon pyrolysis, polymer blends of poly(6-(5-norbornenyl)-decaborane) and poly(methylcarbosilane) converted into boron-carbide/silicon-carbide ceramics with high char yields. These polymer blends were also shown to be useful as reagents for synthesis of hafnium-boride/hafnium-carbide/silicon carbide and zirconium-boride/zirconium-carbide/silicon carbide composites.

Rapid feedback of chemical vapor deposition growth mechanisms by operando X-ray diffraction

DOE PAGES

Martin, Aiden A.; Depond, Philip J.; Bagge-Hansen, Michael; ...

2018-03-14

An operando x-ray diffraction system is presented for elucidating optimal laser assisted chemical vapor deposition growth conditions. The technique is utilized to investigate deposition dynamics of boron-carbon materials using trimethyl borate precursor. Trimethyl borate exhibits vastly reduced toxicological and flammability hazards compared to existing precursors, but has previously not been applied to boron carbide growth. Crystalline boron-rich carbide material is produced in a narrow growth regime on addition of hydrogen during the growth phase at high temperature. Finally, the use of the operando x-ray diffraction system allows for the exploration of highly nonequilibrium conditions and rapid process control, which aremore » not possible using ex situ diagnostics.« less

Rapid feedback of chemical vapor deposition growth mechanisms by operando X-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, Aiden A.; Depond, Philip J.; Bagge-Hansen, Michael

An operando x-ray diffraction system is presented for elucidating optimal laser assisted chemical vapor deposition growth conditions. The technique is utilized to investigate deposition dynamics of boron-carbon materials using trimethyl borate precursor. Trimethyl borate exhibits vastly reduced toxicological and flammability hazards compared to existing precursors, but has previously not been applied to boron carbide growth. Crystalline boron-rich carbide material is produced in a narrow growth regime on addition of hydrogen during the growth phase at high temperature. Finally, the use of the operando x-ray diffraction system allows for the exploration of highly nonequilibrium conditions and rapid process control, which aremore » not possible using ex situ diagnostics.« less

The Effect of Time, Temperature and Composition on Boron Carbide Synthesis by Sol-gel Method

NASA Astrophysics Data System (ADS)

Hadian, A. M.; Bigdeloo, J. A.

2008-02-01

To minimize free carbon residue in the boron carbide (B4C) powder, a modified sol-gel process is performed where the starting materials as boric acid and citric acid compositions are adjusted. Because of boron loss in the form of B2O2(g) during the reduction reaction of the stoichiometric starting composition, the final B4C powders contain carbon residues. Thus, an excess H3BO3 is used in the reaction to compensate the loss and to obtain stoichiometric powders. Parameters of production have been determined using x-ray diffraction analysis and particle size analyses. The synthesized B4C powder using an excess boric acid composition shows no trace of carbon.

Neutron absorbing room temperature vulcanizable silicone rubber compositions

DOEpatents

Zoch, Harold L.

1979-11-27

A neutron absorbing composition comprising a one-component room temperature vulcanizable silicone rubber composition or a two-component room temperature vulcanizable silicone rubber composition in which the composition contains from 25 to 300 parts by weight based on the base silanol or vinyl containing diorganopolysiloxane polymer of a boron compound or boron powder as the neutron absorbing ingredient. An especially useful boron compound in this application is boron carbide.

Sputtered boron indium oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

2017-11-01

Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

Oxidation resistance of selected mechanical carbons at 650 deg C in dry flowing air

NASA Technical Reports Server (NTRS)

Allen, G. P.; Wisander, D. W.

1973-01-01

Oxidation experiments were conducted with several experimental mechanical carbons at 650 C in air flowing at 28 cu cm/sec (STP). Experiments indicate that boron carbide addition and zinc phosphate treatment definitely improved oxidation resistance. Impregnation with coal tar pitch before final graphitization had some beneficial effect on oxidation resistance and it markedly improved flexure strength and hardness. Graphitization temperature alone did not affect oxidation resistance, but with enough added boron carbide the oxidation resistance was increased although the hardness greatly decreased.

Selective laser sintering of cermet mixtures Ti and B4C

NASA Astrophysics Data System (ADS)

Filippov, A. A.; Fomin, V. M.; Malikov, A. G.; Orishich, A. M.

2016-10-01

The work is dedicated to the creation of a new heterogeneous ceramic-composite materials based on boron carbide and titanium, using a laser, in order to further layer-growing 3D products from these materials. The paper discussed two methods for obtaining ceramic-composite material: laser sintering of boron carbide powder and a metal-melting the powder mixture. We study the microstructure of the samples at various energy process modes. An attempt was made to justify the applicability of the regime used for the cultivation of layered products.

High temperature solar energy absorbing surfaces

DOEpatents

Schreyer, J.M.; Schmitt, C.R.; Abbatiello, L.A.

A solar collector having an improved coating is provided. The coating is a plasma-sprayed coating comprising a material having a melting point above 500/sup 0/C at which it is stable and selected from the group of boron carbide, boron nitride, metals and metal oxides, nitrides, carbides, borides, and silicates. The coatings preferably have a porosity of about 15 to 25% and a thickness of less than 200 micrometers. The coatings can be provided by plasma-spraying particles having a mean diameter of about 10 to 200 micrometers.

Characterization of plastic and boron carbide additive manufactured neutron collimators

NASA Astrophysics Data System (ADS)

Stone, M. B.; Siddel, D. H.; Elliott, A. M.; Anderson, D.; Abernathy, D. L.

2017-12-01

Additive manufacturing techniques allow for the production of materials with complicated geometries with reduced costs and production time over traditional methods. We have applied this technique to the production of neutron collimators for use in thermal and cold neutron scattering instrumentation directly out of boron carbide. We discuss the design and generation of these collimators. We also provide measurements at neutron scattering beamlines which serve to characterize the performance of these collimators. Additive manufacturing of parts using neutron absorbing material may also find applications in radiography and neutron moderation.

Effects of Heat Treatment on SiC-SiC Ceramic Matrix Composites

NASA Astrophysics Data System (ADS)

Knauf, Michael W.

Residual stresses resulting from the manufacturing process found within a silicon carbide/silicon carbide (SiC/SiC) ceramic matrix composite were thoroughly investigated through the use of high-energy X-ray diffraction and Raman microspectroscopy. The material system studied was a Rolls-Royce composite produced with Hi-Nicalon fibers woven into a five harness satin weave, coated with boron nitride and silicon carbide interphases, and subsequently infiltrated with silicon carbide particles and a silicon matrix. Constituent stress states were measured before, during, and after heat treatments ranging from 900 °C to 1300 °C for varying times between one and sixty minutes. Stress determination methods developed through these analyses can be utilized in the development of ceramic matrix composites and other materials employing boron-doped silicon. X-ray diffraction experiments were performed at the Argonne National Laboratory Advanced Photon Source to investigate the evolution of constituent stresses through heat treatment, and determine how stress states are affected at high temperature through in situ measurements during heat treatments up to 1250 °C for 30 minutes. Silicon carbide particles in the as-received condition exhibited a nearly isotropic stress state with average tensile stresses of approximately 300 MPa. The silicon matrix exhibited a complimentary average compressive stress of approximately 300 MPa. Strong X-ray diffraction evidence is presented demonstrating solid state boron diffusion and increased boron solubility found in silicon throughout heat treatment. While the constituent stress states did evolve through the heat treatment cycles, including approaching nearly stress-free conditions at temperatures close to the manufacturing temperature, no permanent relaxation of stress was observed. Raman spectroscopy was utilized to investigate stresses found within silicon carbide particles embedded within the matrix and the silicon matrix as an alternate method of measurement. The stresses determined through Raman spectroscopy were comparable to those determined through X-ray diffraction. Neither silicon carbide particles nor silicon were significantly affected through heat treatment, corroborating the X-ray diffraction results. Silicon present near fibers exhibited less compressive stress than the majority of silicon found throughout the matrix. Measurements were taken in situ and ex situ to determine the temporal evolution of the stress state at various temperatures. Heat treatments up to 1300 °C for one hour failed to produce significant changes in the residual stress state of the composite constituents. A strong trend was identified in the Raman silicon signal manifesting a continuously decreasing wavenumber with increasing heat treatment temperature between 1100 °C and 1300 °C in timeframes of less than one minute. This was found to be due to a continuously increasing electronic activation of boron within the silicon matrix, stemming from an increase of boron atoms occupying substitutional silicon lattice sites while covalently bonded to surrounding silicon. A methodology to determine the residual stress state of silicon exhibiting varying degrees of boron dopant is proposed by accounting for the changes in the Raman profile parameters. This method also allows for observing activated boron segregation in various matrix areas; wavenumber gradients in these areas exist which have been misconstrued in literature as large variations in stress, while in fact the variability is likely relatively benign.

Diamond Composite Films for Protective Coatings on Metals and Method of Formation

NASA Technical Reports Server (NTRS)

Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

1997-01-01

Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.

Tension-Compression Fatigue of an Oxide/Oxide Ceramic Matrix Composite at Elevated Temperature in Air and Steam Environments

DTIC Science & Technology

2015-03-26

method has been successfully used with several materials such as silicon carbide fiber - silicon carbide matrix ( SiC / SiC ) CMCs with carbon and boron...elements [14]. These advanced ceramics include oxides, nitrides and carbides of silicon , aluminum, titanium, and zirconium [12]. One of the most...oxides over silicon carbide and other non-oxide materials. In fact, it is the inherent stability of oxides in oxidizing environments which originally

Novel Amorphous Fe-Zr-Si(Cu) Boron-free Alloys

NASA Astrophysics Data System (ADS)

Kopcewicz, M.; Grabias, A.; Latuch, J.; Kowalczyk, M.

2010-07-01

Novel amorphous Fe80(ZrxSi20-x-y)Cuy boron-free alloys, in which boron was completely replaced by silicon as a glass forming element, have been prepared in the form of ribbons by a melt quenching technique. The X-ray diffraction and Mössbauer spectroscopy measurements revealed that the as-quenched ribbons with the composition of x = 6-10 at. % and y = 0, 1 at. % are predominantly amorphous. DSC measurements allowed the estimation of the crystallization temperatures of the amorphous alloys. The soft magnetic properties have been studied by the specialized rf-Mössbauer technique in which the spectra were recorded during an exposure of the samples to the rf field of 0 to 20 Oe at 61.8 MHz. Since the rf-collapse effect observed is very sensitive to the local anisotropy fields it was possible to evaluate the soft magnetic properties of amorphous alloys studied. The rf-Mössbauer studies were accompanied by the conventional measurements of the quasi-static hysteresis loops from which the magnetization and coercive fields were estimated. It was found that amorphous Fe-Zr-Si(Cu) alloys are magnetically very soft, comparable with those of the conventional amorphous B-containing Fe-based alloys.

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peterson, George G.; Wang, Yongqiang; Ianno, N. J.

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10C 2+x:H y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10C 2+x:H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched tomore » the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10C 2+x:H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.« less

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

DOE PAGES

Peterson, George G.; Wang, Yongqiang; Ianno, N. J.; ...

2016-11-09

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10C 2+x:H y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10C 2+x:H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched tomore » the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10C 2+x:H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.« less

75 FR 20520 - Revisions to the Export Administration Regulations Based on the 2009 Missile Technology Control...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-20

... Requirements and ``items'' paragraph of ECCN 1C011 by deleting the reference to boron carbide and replacing it with boron alloys in the MT control section of this ECCN, and by making conforming changes to the MT and NS License Requirements for this ECCN. To effect this change, reference to boron alloys was...

Microstructure and Mechanical Behaviors of Titanium Matrix Composites Containing In Situ Whiskers Synthesized via Plasma Activated Sintering.

PubMed

Sun, Yi; Zhang, Jian; Luo, Guoqiang; Shen, Qiang; Zhang, Lianmeng

2018-04-02

In this paper, titanium matrix composites with in situ TiB whiskers were synthesized by the plasma activated sintering technique; crystalline boron and amorphous boron were used as reactants for in situ reactions, respectively. The influence of the sintering process and the crystallography type of boron on the microstructure and mechanical properties of composites were studied and compared. The densities were evaluated using Archimedes' principle. The microstructure and mechanical properties were characterized by SEM, XRD, EBSD, TEM, a universal testing machine, and a Vickers hardness tester. The prepared composite material showed a high density and excellent comprehensive performance under the PAS condition of 20 MPa at 1000 °C for 3 min. Amorphous boron had a higher reaction efficiency than crystalline boron, and it completely reacted with the titanium matrix to generate TiB whiskers, while there was still a certain amount of residual crystalline boron combining well with the titanium matrix at 1100 °C. The composite samples with a relative density of 98.33%, Vickers hardness of 389.75 HV, compression yield strength of up to 1190 MPa, and an ultimate compressive strength of up to 1710 MPa were obtained. Compared with the matrix material, the compressive strength of TC4 titanium alloy containing crystalline boron and amorphous boron was increased by 7.64% and 15.50%, respectively.

Microstructure and Mechanical Behaviors of Titanium Matrix Composites Containing In Situ Whiskers Synthesized via Plasma Activated Sintering

PubMed Central

Luo, Guoqiang; Shen, Qiang; Zhang, Lianmeng

2018-01-01

In this paper, titanium matrix composites with in situ TiB whiskers were synthesized by the plasma activated sintering technique; crystalline boron and amorphous boron were used as reactants for in situ reactions, respectively. The influence of the sintering process and the crystallography type of boron on the microstructure and mechanical properties of composites were studied and compared. The densities were evaluated using Archimedes’ principle. The microstructure and mechanical properties were characterized by SEM, XRD, EBSD, TEM, a universal testing machine, and a Vickers hardness tester. The prepared composite material showed a high density and excellent comprehensive performance under the PAS condition of 20 MPa at 1000 °C for 3 min. Amorphous boron had a higher reaction efficiency than crystalline boron, and it completely reacted with the titanium matrix to generate TiB whiskers, while there was still a certain amount of residual crystalline boron combining well with the titanium matrix at 1100 °C. The composite samples with a relative density of 98.33%, Vickers hardness of 389.75 HV, compression yield strength of up to 1190 MPa, and an ultimate compressive strength of up to 1710 MPa were obtained. Compared with the matrix material, the compressive strength of TC4 titanium alloy containing crystalline boron and amorphous boron was increased by 7.64% and 15.50%, respectively. PMID:29614842

Phase Contrast Imaging of Damage Initiation During Ballistic Impact of Boron Carbide

NASA Astrophysics Data System (ADS)

Schuster, Brian; Tonge, Andrew; Ramos, Kyle; Rigg, Paulo; Iverson, Adam; Schuman, Adam; Lorenzo, Nicholas

2017-06-01

For several decades, flash X-ray imaging has been used to perform time-resolved investigations of the response of ceramics under ballistic impact. Traditional absorption based contrast offers little insight into the early initiation of inelastic deformation mechanisms and instead typically only shows the gross deformation and fracture behavior. In the present work, we employed phase contrast imaging (PCI) at the Dynamic Compression Sector (DCS) at the Advanced Photon Source, Argonne National Laboratory, to investigate crack initiation and propagation following the impact of copper penetrators into boron carbide targets. These experiments employed a single-stage propellant gun to launch small-scale (0.6 mm diameter by 3 mm long) pure copper impactors at velocities ranging from 0.9 to 1.9 km/s into commercially available boron carbide targets that were 8 mm on a side. At the lowest striking velocities the penetrator undergoes dwell or interface defeat and the target response is consistent with the cone crack formation at the impact site. At higher striking velocities there is a distinct transition to massive fragmentation leading to the onset of penetration.

Computational Design of Epoxy/ Boron Carbide Nanocomposites for Radiation Shielding Applications

NASA Astrophysics Data System (ADS)

Bejagam, Karteek; Galehdari, Nasim; Espinosa, Ingrid; Deshmukh, Sanket A.; Kelkar, Ajit D.

An individual working in industries that include nuclear power plants, healthcare industry, and aerospace are knowingly or unknowingly exposed to radiations of different energies. Exposure to high-energy radiations such as α/ β particle emissions or gamma ray electromagnetic radiations enhances the health risks that can lead to carcinogenesis, cardiac problems, cataracts, and other acute radiation syndromes. The best possible solution to protect one from the exposure to radiations is shielding. In the present study, we have developed a new algorithm to generate a range of different structures of Diglycidyl Ether of Bisphenol F (EPON 862) and curing agent Diethylene Toluene Diamine (DETDA) resins with varying degrees of crosslinking. 3, 5, and 10 weight percent boron carbide was employed as filling materials to study its influence on the thermal and mechanical properties of composite. We further conduct the reactive molecular dynamics (RMD) simulations to investigate the effect of radiation exposure on the structural, physical, and mechanical properties of these Epoxy/Boron Carbide nanocomposites. Where possible the simulation results were compared with the experimental data.

Status and applications of diamond and diamond-like materials: An emerging technology

NASA Technical Reports Server (NTRS)

1990-01-01

Recent discoveries that make possible the growth of crystalline diamond by chemical vapor deposition offer the potential for a wide variety of new applications. This report takes a broad look at the state of the technology following from these discoveries in relation to other allied materials, such as high-pressure diamond and cubic boron nitride. Most of the potential defense, space, and commercial applications are related to diamond's hardness, but some utilize other aspects such as optical or electronic properties. The growth processes are reviewed, and techniques for characterizing the resulting materials' properties are discussed. Crystalline diamond is emphasized, but other diamond-like materials (silicon carbide, amorphous carbon containing hydrogen) are also examined. Scientific, technical, and economic problem areas that could impede the rapid exploitation of these materials are identified. Recommendations are presented covering broad areas of research and development.

Production method for making rare earth compounds

DOEpatents

McCallum, R.W.; Ellis, T.W.; Dennis, K.W.; Hofer, R.J.; Branagan, D.J.

1997-11-25

A method of making a rare earth compound, such as a earth-transition metal permanent magnet compound, without the need for producing rare earth metal as a process step, comprises carbothermically reacting a rare earth oxide to form a rare earth carbide and heating the rare earth carbide, a compound-forming reactant (e.g., a transition metal and optional boron), and a carbide-forming element (e.g., a refractory metal) that forms a carbide that is more thermodynamically favorable than the rare earth carbide whereby the rare earth compound (e.g., Nd{sub 2}Fe{sub 14}B or LaNi{sub 5}) and a carbide of the carbide-forming element are formed.

Production method for making rare earth compounds

DOEpatents

McCallum, R. William; Ellis, Timothy W.; Dennis, Kevin W.; Hofer, Robert J.; Branagan, Daniel J.

1997-11-25

A method of making a rare earth compound, such as a earth-transition metal permanent magnet compound, without the need for producing rare earth metal as a process step, comprises carbothermically reacting a rare earth oxide to form a rare earth carbide and heating the rare earth carbide, a compound-forming reactant (e.g. a transition metal and optional boron), and a carbide-forming element (e.g. a refractory metal) that forms a carbide that is more thermodynamically favorable than the rare earth carbide whereby the rare earth compound (e.g. Nd.sub.2 Fe.sub.14 B or LaNi.sub.5) and a carbide of the carbide-forming element are formed.

Amorphization driven by defect-induced mechanical instability.

PubMed

Jiang, Chao; Zheng, Ming-Jie; Morgan, Dane; Szlufarska, Izabela

2013-10-11

Using ab initio molecular dynamics simulations, we perform a comparative study of the defect accumulation process in silicon carbide (SiC) and zirconium carbide (ZrC). Interestingly, we find that the fcc Si sublattice in SiC spontaneously and gradually collapses following the continuous introduction of C Frenkel pairs (FPs). Above a critical amorphization dose of ~0.33 displacements per atom (dpa), the pair correlation function exhibits no long-range order. In contrast, the fcc Zr sublattice in ZrC remains structurally stable against C sublattice displacements up to the highest dose of 1.0 dpa considered. Consequently, ZrC cannot be amorphized by the accumulation of C FPs. We propose defect-induced mechanical instability as the key mechanism driving the amorphization of SiC under electron irradiation.

Boron nitride composites

DOEpatents

Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

2017-02-21

According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

Comparative studies of electrochemical properties of carbon nanotubes and nanostructured boron carbide

NASA Astrophysics Data System (ADS)

Singh, Paviter; Kaur, Gurpreet; Singh, Kulwinder; Singh, Bikramjeet; Kaur, Manjot; Kumar, Manjeet; Bala, Rajni; Kumar, Akshay

2018-05-01

Boron carbide (B4C) and carbon nanotubes (CNTs) have the potential to act as electrocatalyst as these material show bifunctional behavior. B4C and CNTs were synthesized using solvothermal method. B4C display great catalytic activity as compared to CNTs. Raman spectra confirmed the formation of nanostructured carbon nanotubes. The observed onset potential was smaller 1.58 V in case of B4C as compared to CNTs i.e. 1.96 V in cyclic voltammetry. B4C material can emerge as a promising bifunctional electrocatalyst for battery applications.

Density functional theory (DFT) studies of hydrogen rich solids and boron carbide under extreme conditions

NASA Astrophysics Data System (ADS)

Shamp, Andrew James

Since the first prediction that compressed hydrogen would metallize in 1935 and the further prediction that the metallic allotrope would be a superconductor at high temperatures, metallic hydrogen has been termed the "holy grail" of high-pressure science. A tremendous amount of theoretical and experimental research has been carried out, with the ultimate goal of metallizing hydrogen via the application of external pressure. It has been previously proposed that doping hydrogen with another element can lower the pressure at which metallization occurs. A number of experimental and theoretical studies have investigated doping hydrogen by either a group XIII or XIV element. Experiments in diamond anvil cells have illustrated that it is indeed possible to synthesize hydrogen-rich phases under conditions of extreme pressures, and SiH4 (H2)2, GeH4(H2) n, and Xe(H2)n have been shown to behave as true compounds. The focus herein is on the theoretical exploration of hydrogen-rich phases with novel stoichiometries, which contain a dopant element up to pressures of 350 GPa. In particular, the alkali-metal and alkaline Earth metal polyhydrides (MHn where n > 1) have been considered. Within this thesis the XtalOpt evolutionary algorithm was employed in order to complete this work, and predict the most stable structures of cesium and beryllium polyhydrides under pressure. In addition, we explore the possibility of mixing excess hydrogen with an electronegative element, iodine and phosphorus. The phases found are examined via detailed first principles calculations. In addition, because of its outstanding hardness, thermodynamic stability, low density, electronic properties, thermal stability, and high melting point boron carbide has many uses: i.e. as a refractory material, in abrasive powders and ballistics, as a neutron radiation absorbent, and in electronic applications. However, little is known about the behavior of boron carbide when under the external stress of pressure. The shock compression of boron carbide has been widely studied for decades both experimentally and theoretically. Due to its low density and high shock strength boron carbide is a candidate for use in ballistic applications, such as armor. However, even with the 40 years of boron carbide shocks, its properties and response while in a shocked state have remained difficult to ascertain. A series of first-principles equation of state (EOS) calculations of B4 C that are in excellent agreement with existing Omega laser measurements have been conducted. Furthermore, in the P-T range to 1.5 TPa and 60,000 K the EOS has been extended. These results are relevant for ongoing and future experimental efforts at high-energy laser facilities such as the National Ignition Facility at Lawrence Livermore National Laboratory.

Fabrication of boron sputter targets

DOEpatents

Makowiecki, Daniel M.; McKernan, Mark A.

1995-01-01

A process for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B.sub.4 C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil.

Metal-Element Compounds of Titanium, Zirconium, and Hafnium as Pyrotechnic Fuels

DTIC Science & Technology

2015-05-04

including ceramic materials in this role has been far less common. Following the development of boron carbide-based pyrotechnics in our laboratories, we...ameliorate these problems. Commercially available group 4 compounds containing hydrogen, boron , carbon, nitrogen, silicon, and phosphorus were obtained for...predicted behavior suggests that these compounds may be useful for a variety of pyrotechnic applications. 1. INTRODUCTION The recent use of boron

Characterization of B4C-composite-reinforced aluminum alloy composites

NASA Astrophysics Data System (ADS)

Singh, Ram; Rai, R. N.

2018-04-01

Dry sliding wear tests conducted on Pin-on-disk wear test machine. The rotational speed of disc is ranging from (400-600rpm) and under loads ranging from (30-70 N) the contact time between the disc and pin is constant for each pin specimen of composites is 15 minute. In all manufacturing industries the uses of composite materials has been increasing globally, In the present study, an aluminum 5083 alloy is used as the matrix and 5% of weight percentage of Boron Carbide (B4C) as the reinforcing material. The composite is produced using stir casting technique. This is cost effective method. The aluminum 5083 matrix can be strengthened by reinforcing with hard ceramic particles like silicon carbide and boron carbide. In this experiment, aluminum 5083 alloy is selected as one of main material for making parts of the ship it has good mechanical properties, good corrosion resistance and it is can welded very easily and does have good strength. The samples are tested for hardness and tensile strength. The mechanical properties like Hardness can be increased by reinforcing aluminum 5083alloy 5% boron carbide (B4C) particles and tensile strength. Finally the Scanning Electron Microscope (SEM) analysis and EDS is done, which helps to study topography of composites and it produces images of a sample by scanning it with a focused beam of electrons and the presence of composition found in the matrix.

Improved fiber retention by the use of fillers in graphite fiber/resin matrix composites

NASA Technical Reports Server (NTRS)

Gluyas, R. E.; Bowles, K. J.

1980-01-01

A variety of matrix fillers were tested for their ability to prevent loss of fiber from graphite fiber/PMR polyimide and graphite fiber/epoxy composites in a fire. The fillers tested included powders of boron, boron carbide lime glass, lead glass, and aluminum. Boron was the most effective and prevented any loss of graphite fiber during burning. Mechanical properties of composites containing boron filler were measured and compared to those of composites containing no filler.

Kinetic Monte Carlo (kMC) simulation of carbon co-implant on pre-amorphization process.

PubMed

Park, Soonyeol; Cho, Bumgoo; Yang, Seungsu; Won, Taeyoung

2010-05-01

We report our kinetic Monte Carlo (kMC) study of the effect of carbon co-implant on the pre-amorphization implant (PAL) process. We employed BCA (Binary Collision Approximation) approach for the acquisition of the initial as-implant dopant profile and kMC method for the simulation of diffusion process during the annealing process. The simulation results implied that carbon co-implant suppresses the boron diffusion due to the recombination with interstitials. Also, we could compare the boron diffusion with carbon diffusion by calculating carbon reaction with interstitial. And we can find that boron diffusion is affected from the carbon co-implant energy by enhancing the trapping of interstitial between boron and interstitial.

Observation of ‘hidden’ planar defects in boron carbide nanowires and identification of their orientations

PubMed Central

2014-01-01

The physical properties of nanostructures strongly depend on their structures, and planar defects in particular could significantly affect the behavior of the nanowires. In this work, planar defects (twins or stacking faults) in boron carbide nanowires are extensively studied by transmission electron microscopy (TEM). Results show that these defects can easily be invisible, i.e., no presence of characteristic defect features like modulated contrast in high-resolution TEM images and streaks in diffraction patterns. The simplified reason of this invisibility is that the viewing direction during TEM examination is not parallel to the (001)-type planar defects. Due to the unique rhombohedral structure of boron carbide, planar defects are only distinctive when the viewing direction is along the axial or short diagonal directions ([100], [010], or 1¯10) within the (001) plane (in-zone condition). However, in most cases, these three characteristic directions are not parallel to the viewing direction when boron carbide nanowires are randomly dispersed on TEM grids. To identify fault orientations (transverse faults or axial faults) of those nanowires whose planar defects are not revealed by TEM, a new approach is developed based on the geometrical analysis between the projected preferred growth direction of a nanowire and specific diffraction spots from diffraction patterns recorded along the axial or short diagonal directions out of the (001) plane (off-zone condition). The approach greatly alleviates tedious TEM examination of the nanowire and helps to establish the reliable structure–property relations. Our study calls attention to researchers to be extremely careful when studying nanowires with potential planar defects by TEM. Understanding the true nature of planar defects is essential in tuning the properties of these nanostructures through manipulating their structures. PMID:24423258

Observation of 'hidden' planar defects in boron carbide nanowires and identification of their orientations.

PubMed

Guan, Zhe; Cao, Baobao; Yang, Yang; Jiang, Youfei; Li, Deyu; Xu, Terry T

2014-01-15

The physical properties of nanostructures strongly depend on their structures, and planar defects in particular could significantly affect the behavior of the nanowires. In this work, planar defects (twins or stacking faults) in boron carbide nanowires are extensively studied by transmission electron microscopy (TEM). Results show that these defects can easily be invisible, i.e., no presence of characteristic defect features like modulated contrast in high-resolution TEM images and streaks in diffraction patterns. The simplified reason of this invisibility is that the viewing direction during TEM examination is not parallel to the (001)-type planar defects. Due to the unique rhombohedral structure of boron carbide, planar defects are only distinctive when the viewing direction is along the axial or short diagonal directions ([100], [010], or 1¯10) within the (001) plane (in-zone condition). However, in most cases, these three characteristic directions are not parallel to the viewing direction when boron carbide nanowires are randomly dispersed on TEM grids. To identify fault orientations (transverse faults or axial faults) of those nanowires whose planar defects are not revealed by TEM, a new approach is developed based on the geometrical analysis between the projected preferred growth direction of a nanowire and specific diffraction spots from diffraction patterns recorded along the axial or short diagonal directions out of the (001) plane (off-zone condition). The approach greatly alleviates tedious TEM examination of the nanowire and helps to establish the reliable structure-property relations. Our study calls attention to researchers to be extremely careful when studying nanowires with potential planar defects by TEM. Understanding the true nature of planar defects is essential in tuning the properties of these nanostructures through manipulating their structures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, Yuri, E-mail: yufi55@mail.ru; National Research Tomsk State University, 36 Lenina Str., Tomsk, 634050; National Research Tomsk Polytechnic University, 30 Lenina Str., Tomsk, 634050

The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm{sup 2}, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electronmore » beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.« less

Asymmetric twins in rhombohedral boron carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fujita, Takeshi, E-mail: tfujita@wpi-aimr.tohoku.ac.jp; Guan, Pengfei; Madhav Reddy, K.

2014-01-13

Superhard materials consisting of light elements have recently received considerable attention because of their ultrahigh specific strength for a wide range of applications as structural and functional materials. However, the failure mechanisms of these materials subjected to high stresses and dynamic loading remain to be poorly known. We report asymmetric twins in a complex compound, boron carbide (B{sub 4}C), characterized by spherical-aberration-corrected transmission electron microscopy. The atomic structure of boron-rich icosahedra at rhombohedral vertices and cross-linked carbon-rich atomic chains can be clearly visualized, which reveals unusual asymmetric twins with detectable strains along the twin interfaces. This study offers atomic insightsmore » into the structure of twins in a complex material and has important implications in understanding the planar defect-related failure of superhard materials under high stresses and shock loading.« less

High hardness BaCb-(BxOy/BN) composites with 3D mesh-like fine grain-boundary structure by reactive spark plasma sintering.

PubMed

Vasylkiv, Oleg; Borodianska, Hanna; Badica, Petre; Grasso, Salvatore; Sakka, Yoshio; Tok, Alfred; Su, Liap Tat; Bosman, Michael; Ma, Jan

2012-02-01

Boron carbide B4C powders were subject to reactive spark plasma sintering (also known as field assisted sintering, pulsed current sintering or plasma assisted sintering) under nitrogen atmosphere. For an optimum hexagonal BN (h-BN) content estimated from X-ray diffraction measurements at approximately 0.4 wt%, the as-prepared BaCb-(BxOy/BN) ceramic shows values of Berkovich and Vickers hardness of 56.7 +/- 3.1 GPa and 39.3 +/- 7.6 GPa, respectively. These values are higher than for the vacuum SPS processed B4C pristine sample and the h-BN -mechanically-added samples. XRD and electronic microscopy data suggest that in the samples produced by reactive SPS in N2 atmosphere, and containing an estimated amount of 0.3-1.5% h-BN, the crystallite size of the boron carbide grains is decreasing with the increasing amount of N2, while for the newly formed lamellar h-BN the crystallite size is almost constant (approximately 30-50 nm). BN is located at the grain boundaries between the boron carbide grains and it is wrapped and intercalated by a thin layer of boron oxide. BxOy/BN forms a fine and continuous 3D mesh-like structure that is a possible reason for good mechanical properties.

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pawbake, Amit; Tata Institute of Fundamental Research, Colaba, Mumbai 400 005; Mayabadi, Azam

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gasmore » mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.« less

Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wire

DOEpatents

Suplinskas, Raymond J.; Finnemore, Douglas; Bud'ko, Serquei; Canfield, Paul

2007-11-13

A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

Effects of configurational disorder on the elastic properties of icosahedral boron-rich alloys based on B{sub 6}O, B{sub 13}C{sub 2}, and B{sub 4}C, and their mixing thermodynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ektarawong, A., E-mail: anekt@ifm.liu.se; Hultman, L.; Birch, J.

The elastic properties of alloys between boron suboxide (B{sub 6}O) and boron carbide (B{sub 13}C{sub 2}), denoted by (B{sub 6}O){sub 1−x}(B{sub 13}C{sub 2}){sub x}, as well as boron carbide with variable carbon content, ranging from B{sub 13}C{sub 2} to B{sub 4}C are calculated from first-principles. Furthermore, the mixing thermodynamics of (B{sub 6}O){sub 1−x}(B{sub 13}C{sub 2}){sub x} is studied. A superatom-special quasirandom structure approach is used for modeling different atomic configurations, in which effects of configurational disorder between the carbide and suboxide structural units, as well as between boron and carbon atoms within the units, are taken into account. Elastic propertiesmore » calculations demonstrate that configurational disorder in B{sub 13}C{sub 2}, where a part of the C atoms in the CBC chains substitute for B atoms in the B{sub 12} icosahedra, drastically increase the Young’s and shear modulus, as compared to an atomically ordered state, B{sub 12}(CBC). These calculated elastic moduli of the disordered state are in excellent agreement with experiments. Configurational disorder between boron and carbon can also explain the experimentally observed almost constant elastic moduli of boron carbide as the carbon content is changed from B{sub 4}C to B{sub 13}C{sub 2}. The elastic moduli of the (B{sub 6}O){sub 1−x}(B{sub 13}C{sub 2}){sub x} system are also practically unchanged with composition if boron-carbon disorder is taken into account. By investigating the mixing thermodynamics of the alloys, in which the Gibbs free energy is determined within the mean-field approximation for the configurational entropy, we outline the pseudo-binary phase diagram of (B{sub 6}O){sub 1−x}(B{sub 13}C{sub 2}){sub x}. The phase diagram reveals the existence of a miscibility gap at all temperatures up to the melting point. Also, the coexistence of B{sub 6}O-rich as well as ordered or disordered B{sub 13}C{sub 2}-rich domains in the material prepared through equilibrium routes is predicted.« less

Carbide-derived carbons - From porous networks to nanotubes and graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Presser, V.; Heon, M.; Gogotsi, Y.

2011-02-09

Carbide-derived carbons (CDCs) are a large family of carbon materials derived from carbide precursors that are transformed into pure carbon via physical (e.g., thermal decomposition) or chemical (e.g., halogenation) processes. Structurally, CDC ranges from amorphous carbon to graphite, carbon nanotubes or graphene. For halogenated carbides, a high level of control over the resulting amorphous porous carbon structure is possible by changing the synthesis conditions and carbide precursor. The large number of resulting carbon structures and their tunability enables a wide range of applications, from tribological coatings for ceramics, or selective sorbents, to gas and electrical energy storage. In particular, themore » application of CDC in supercapacitors has recently attracted much attention. This review paper summarizes key aspects of CDC synthesis, properties, and applications. It is shown that the CDC structure and properties are sensitive to changes of the synthesis parameters. Understanding of processing–structure–properties relationships facilitates tuning of the carbon material to the requirements of a certain application.« less

Diamond-silicon carbide composite

DOEpatents

Qian, Jiang; Zhao, Yusheng

2006-06-13

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m^1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Diamond-Silicon Carbide Composite And Method For Preparation Thereof

DOEpatents

Qian, Jiang; Zhao, Yusheng

2005-09-06

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Cobalt-Free Permanent Magnet Alloys.

DTIC Science & Technology

1984-10-01

carbide co- UC CbC lumbium carbide M003 Uranium carbide - tho- UC 2 25ThC rium carbide ZrO2 MgO WOs Use of this Process for MnAlC As indicated in the...cobalt. Free World Cobal Consumption Estimated Breakdown by End Uses Magnetic alloys 20% Cemented carbides - 5% 30 SuPerolloy _ 15% Other steels and...would normally result in the formation of binary alloy of TbFe 2 and preventing the formation of amorphous alloy (Fe-B) contain- ing Tb. The

Effect of boron on intergranular hot cracking in Ni-Cr-Fe superalloys containing niobium

NASA Technical Reports Server (NTRS)

Thompson, R. G.

1990-01-01

Solidification mechanisms had a dominant influence on microfissuring behavior of the test group. Carbon modified the Laves formation significantly and showed that one approach to alloy design would be balancing carbide formers against Laves formers. Boron's strong effect on microfissuring can be traced to its potency as a Laves former. Boron's segregation to grain boundaries plays at best a secondary role in microfissuring.

Modification of the titanium alloy surface in electroexplosive alloying with boron carbide and subsequent electron-beam treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gromov, Victor E., E-mail: gromov@physics.sibsiu.ru; Budovskikh, Evgeniy A., E-mail: budovskikh-ea@physics.sibsiu.ru; Bashchenko, Lyudmila P., E-mail: gromov@physics.sibsiu.ru

2015-10-27

The modification of the VT6 titanium alloy surface in electroexplosion alloying with plasma being formed in titanium foil with a weighed powder of boron carbide with subsequent irradiation by a pulsed electron beam has been carried out. An electroexplosive alloying zone of a thickness up to 50 μm with a gradient structure is found to form. The subsequent electron-beam treatment of the alloying zone results in smoothing of the alloying surface and is accompanied by the formation of the multilayer structure with alternating layers of various alloying degree at a depth of 30 μm.

Equation of state, adiabatic sound speed, and Gruneisen coefficient of boron carbide along the principal Hugoniot to 700 GPa

DOE PAGES

Fratanduono, D. E.; Celliers, P. M.; Braun, D. G.; ...

2016-11-16

We describe a new equation of state (EOS) experimental technique that enables the study of thermodynamic derivatives into the TPa regime and apply it to boron carbide (B4C). The data presented here are the first principal Hugoniot sound speed measurements reported using a laser-driven shock platform, providing a new means to explore the high-pressure off-Hugoniot response of opaque materials. Furthermore, the extended B4C Hugoniot suggests the presence of a new high-pressure phase, as recently predicted by molecular dynamics simulations, adding to the complexity of the existing phase diagram.

Analysis of a boron-carbide-drum-controlled critical reactor experiment

NASA Technical Reports Server (NTRS)

Mayo, W. T.

1972-01-01

In order to validate methods and cross sections used in the neutronic design of compact fast-spectrum reactors for generating electric power in space, an analysis of a boron-carbide-drum-controlled critical reactor was made. For this reactor the transport analysis gave generally satisfactory results. The calculated multiplication factor for the most detailed calculation was only 0.7-percent Delta k too high. Calculated reactivity worth of the control drums was $11.61 compared to measurements of $11.58 by the inverse kinetics methods and $11.98 by the inverse counting method. Calculated radial and axial power distributions were in good agreement with experiment.

Fabrication of boron sputter targets

DOEpatents

Makowiecki, D.M.; McKernan, M.A.

1995-02-28

A process is disclosed for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B{sub 4}C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil. 7 figs.

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

Evolution of thermo-physical properties and annealing of fast neutron irradiated boron carbide

NASA Astrophysics Data System (ADS)

Gosset, Dominique; Kryger, Bernard; Bonal, Jean-Pierre; Verdeau, Caroline; Froment, Karine

2018-03-01

Boron carbide is widely used as a neutron absorber in most nuclear reactors, in particular in fast neutron ones. The irradiation leads to a large helium production (up to 1022/cm3) together with a strong decrease of the thermal conductivity. In this paper, we have performed thermal diffusivity measurements and X-ray diffraction analyses on boron carbide samples coming from control rods of the French Phenix LMFBR reactor. The burnups range from 1021 to 8.1021/cm3. We first confirm the strong decrease of the thermal conductivity at the low burnup, together with high microstructural modifications: swelling, large micro-strains, high defects density, and disordered-like material conductivity. We observe the microstructural parameters are highly anisotropic, with high micro-strains and flattened coherent diffracting domains along the (00l) direction of the hexagonal structure. Performing heat treatments up to high temperature (2200 °C) allows us to observe the material thermal conductivity and microstructure restoration. It then appears the thermal conductivity healing is correlated to the micro-strain relaxation. We then assume the defects responsible for most of the damage are the helium bubbles and the associated stress fields.

Fabrication and tribological response of aluminium 6061 hybrid composite reinforced with bamboo char and boron carbide micro-fillers

NASA Astrophysics Data System (ADS)

Chethan, K. N.; Pai, Anand; Keni, Laxmikant G.; Singhal, Ashish; Sinha, Shubham

2018-02-01

Metal matrix composites (MMCs) have a wide scope of industrial applications and triumph over conventional materials due to their light weight, higher specific strength, good wear resistance and lower coefficient of thermal expansion. The present study aims at establishing the feasibility of using Bamboo charcoal particulate and boron carbide as reinforcements in Al-6061 alloy matrix and to investigate their effect on the wear of composites taking into consideration the interfacial adhesion of the reinforcements in the alloy. Al-6061 alloy was chosen as a base metallic alloy matrix. Sun-dried bamboo canes were used for charcoal preparation with the aid of a muffle furnace. The carbon content in the charcoal samples was determined by EDS (energy dispersive spectroscopy). In present study, stir casting technique was used to prepare the samples with 1%, 2%, and 3% weight of bamboo charcoal and boron carbide with Al-6061. The fabricated composites were homogenised at 570°C for 6 hours and cooled at room temperature. Wear studies were carried out on the specimens with different speed and loads. It was found that wear rate and coefficient of friction decreased with increase in the reinforcement content.

The development of heterogeneous materials based on Ni and B4C powders using a cold spray and stratified selective laser melting technologies

NASA Astrophysics Data System (ADS)

Filippov, A. A.; Fomin, V. M.; Buzyurkin, A. E.; Kosarev, V. F.; Malikov, A. G.; Orishich, A. M.; Ryashin, N. S.

2018-01-01

The work is dedicated to the creation of new ceramic-composite materials based on boron carbide, nickel and using a laser welding in order to obtain three dimensional objects henceforth. The perspective way of obtaining which has been suggested by the authors combined two methods: cold spray technology and subsequent laser post-treatment. At this stage, the authors focused on the interaction of the laser with the substance, regardless of the multi-layer object development. The investigated material of this work was the metal-ceramic mixture based on boron carbide, which has high physical and mechanical characteristics, such as hardness, elastic modulus, and chemical resistance. The nickel powder as a binder and different types of boron carbide were used. The ceramic content varied from 30 to 70% by mass. Thin ceramic layers were obtained by the combined method and cross-sections of different seams were studied. It was shown that the most perspective layers for additive manufacturing could be obtained from cold spray coatings with ceramic concentrations more than 50% by weight treated when laser beam was defocused (thermal-conductive laser mode).

Abrasive wear behavior of heat-treated ABC-silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xiao Feng; Lee, Gun Y.; Chen, Da

2002-06-17

Hot-pressed silicon carbide, containing aluminum, boron, and carbon additives (ABC-SiC), was subjected to three-body and two-body wear testing using diamond abrasives over a range of sizes. In general, the wear resistance of ABC-SiC, with suitable heat treatment, was superior to that of commercial SiC.

Specially designed B4C/SnO2 nanocomposite for photocatalysis: traditional ceramic with unique properties

NASA Astrophysics Data System (ADS)

Singh, Paviter; Kaur, Gurpreet; Singh, Kulwinder; Singh, Bikramjeet; Kaur, Manpreet; Kaur, Manjot; Krishnan, Unni; Kumar, Manjeet; Bala, Rajni; Kumar, Akshay

2018-02-01

Boron carbide: A traditional ceramic material shows unique properties when explored in nano-range. Specially designed boron-based nanocomposite has been synthesized by reflux method. The addition of SnO2 in base matrix increases the defect states in boron carbide and shows unique catalytic properties. The calculated texture coefficient and Nelson-Riley factor show that the synthesized nanocomposite has large number of defect states. Also this composite is explored for the first time for catalysis degradation of industrial used dyes. The degradation analysis of industrial pollutants such as Novacron red Huntsman (NRH) and methylene blue (MB) dye reveals that the composite is an efficient catalyst. Degradation study shows that 1 g/L catalyst concentration of B4C/SnO2 degrades NRH and MB dye up to approximately 97.38 and 79.41%, respectively, in 20 min under sunlight irradiation. This water-insoluble catalyst can be recovered and reused.

Fast-spectrum space-power-reactor concepts using boron control devices

NASA Technical Reports Server (NTRS)

Mayo, W.

1973-01-01

Several fast-spectrum space power reactor concepts that use boron carbide control devices were examined to determine the neutronic feasibility of the designs. The designs considered were (1) a 199-fuel-pin, 12-poison-reflector-control-drum reactor; (2) a 232-fuel-pin reactor with 12 reflector drums and three in-core control rods; (3) a 337-fuel-pin design with 12 incore control rods; and a 181-fuel-pin design with six drums closely coupled to the core to increase reactivity per drum. Adequate reactivity control and excess reactivity could be obtained for each concept, and the goals of 50,000 hours at 2.17 thermal megawatts with a lithium-7 coolant outlet temperature of 1222 K could be met without exceeding the 1-percent-clad-creep criterion. Heating rates in the boron carbide were calculated, but a heat transfer analysis was not done.

Dynamic Behavior and Optimization of Advanced Armor Ceramics: January-December 2012 Annual Report

DTIC Science & Technology

2015-03-01

tasks are reviewed: Nanostructured Armor Ceramics: Focus on Boron Carbide; The Role of Microstructure in the Impact Resistance for Silicon Carbide...Task 2: The Role of Microstructure in the Impact Resistance for Silicon Carbide (SiC), Core Program 22 3.1 Long-Range Goals 22 3.2 Background 22 3.3...from a 2-gr drop test using corn starch as a C source; D(0.9) = 1.27 μm ....................................................................12 Fig

Joining of materials using laser heating

DOEpatents

Cockeram, Brian V.; Hicks, Trevor G.; Schmid, Glenn C.

2003-07-01

A method for diffusion bonding ceramic layers such as boron carbide, zirconium carbide, or silicon carbide uses a defocused laser beam to heat and to join ceramics with the use of a thin metal foil insert. The metal foil preferably is rhenium, molybdenum or titanium. The rapid, intense heating of the ceramic/metal/ceramic sandwiches using the defocused laser beam results in diffusive conversion of the refractory metal foil into the ceramic and in turn creates a strong bond therein.

Investigation of the Optical, Electronic, and Structural Properties of Fiber Optic Glasses

DTIC Science & Technology

1993-06-01

H. Kawarada, and A. Hiraki , Proc. of MRS: Symp. in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, eds. J.F. Glass...vacancy emission. This ,5Y. Yokota, H. Kawarada, and A. Hiraki , in Diamond, Boron Ni- observation is in accord with the interpretation of the tride

A comparative study on carbon, boron-nitride, boron-phosphide and silicon-carbide nanotubes based on surface electrostatic potentials and average local ionization energies.

PubMed

Esrafili, Mehdi D; Behzadi, Hadi

2013-06-01

A density functional theory study was carried out to predict the electrostatic potentials as well as average local ionization energies on both the outer and the inner surfaces of carbon, boron-nitride (BN), boron-phosphide (BP) and silicon-carbide (SiC) single-walled nanotubes. For each nanotube, the effect of tube radius on the surface potentials and calculated average local ionization energies was investigated. It is found that SiC and BN nanotubes have much stronger and more variable surface potentials than do carbon and BP nanotubes. For the SiC, BN and BP nanotubes, there are characteristic patterns of positive and negative sites on the outer lateral surfaces. On the other hand, a general feature of all of the systems studied is that stronger potentials are associated with regions of higher curvature. According to the evaluated surface electrostatic potentials, it is concluded that, for the narrowest tubes, the water solubility of BN tubes is slightly greater than that of SiC followed by carbon and BP nanotubes.

Electrical Properties of Materials for Elevated Temperature Resistance Strain Gage Application. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen

1987-01-01

The objective was to study the electrical resistances of materials that are potentially useful as resistance strain gages at 1000 C. Transition metal carbides and nitrides, boron carbide and silicon carbide were selected for the experimental phase of this research. Due to their low temperature coefficient of resistance and good stability, TiC, ZrC, B sub 4 C and beta-SiC are suggested as good candidates for high temperature resistance strain gage applications.

Methods for producing reinforced carbon nanotubes

DOEpatents

Ren, Zhifen [Newton, MA; Wen, Jian Guo [Newton, MA; Lao, Jing Y [Chestnut Hill, MA; Li, Wenzhi [Brookline, MA

2008-10-28

Methods for producing reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials are disclosed. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.

Development of a 30 kW Inductively Coupled Plasma Torch Facility for Advanced Aerospace Material Investigations

DTIC Science & Technology

2012-02-21

passive oxidation of zirconium diboride forms zirconia and boron oxide, and the passive oxidation of silicon carbide forms silica and carbon monoxide: ZrB2... silicon carbide composites in the ICP wind tunnels. However, this concept has never been explored as an in situ diagnostic for UHTC materials systems...Process- ing, properties, and arc jet oxidation of hafnium diboride/ silicon carbide ultra high temperature ceramics. J Mater Sci 2004;39:5925–37. 12

Grain boundary resistance to amorphization of nanocrystalline silicon carbide

PubMed Central

Chen, Dong; Gao, Fei; Liu, Bo

2015-01-01

Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized. PMID:26558694

Grain boundary resistance to amorphization of nanocrystalline silicon carbide.

PubMed

Chen, Dong; Gao, Fei; Liu, Bo

2015-11-12

Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized.

Adhesion and friction of transition metals in contact with nonmetallic hard materials

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1981-01-01

Sliding friction experiments were conducted with the metals yttrium, titanium, tantalum, zirconium, vanadium, neodymium, iron, cobalt, nickel, tungsten, platinum, rhenium, ruthenium, and rhodium in sliding contact with single crystal diamond, silicon carbide, pyrolytic boron nitride, and ferrite. Auger electron spectroscopy analysis was conducted with the metals and nonmetals to determine the surface chemistry and the degree of surface cleanliness. The results of the investigation indicate the adhesion and friction of the transition metals in contact with diamond, silicon carbide, boron nitride, and ferrite are related to the relative chemical activity of the metals. The more chemically active the metal, the higher the coefficient of friction and the greater amount of transfer to the nonmetals.

The Effect of Boron and Zirconium on the Structure and Tensile Properties of the Cast Nickel-Based Superalloy ATI 718Plus

NASA Astrophysics Data System (ADS)

Hosseini, Seyed Ali; Abbasi, Seyed Mehdi; Madar, Karim Zangeneh

2018-04-01

The effects of boron and zirconium on cast structure, hardness, and tensile properties of the nickel-based superalloy 718Plus were investigated. For this purpose, five alloys with different contents of boron and zirconium were cast via vacuum induction melting and then purified via vacuum arc remelting. Microstructural analysis by light-optical microscope and scanning electron microscope equipped with energy-dispersive x-ray spectroscopy and phase studies by x-ray diffraction analysis were performed. The results showed that boron and zirconium tend to significantly reduce dendritic arm spacing and increase the amount of Laves, Laves/gamma eutectic, and carbide phases. It was also found that boron led to the formation of B4C and (Cr, Fe, Mo, Ni, Ti)3B2 phases and zirconium led to the formation of intermetallic phases and ZrC carbide. In the presence of boron and zirconium, the hardness and its difference between dendritic branches and inter-dendritic spaces increased by concentrating such phases as Laves in the inter-dendritic spaces. These elements had a negative effect on tensile properties of the alloy, including ductility and strength, mainly because of the increase in the Laves phase. It should be noted that the largest degradation of the tensile properties occurred in the alloys containing the maximum amount of zirconium.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zinin, Pavel V.; Burgess, Katherine; Jia, Ruth

Dense BC{sub x} phases with high boron concentration are predicted to be metastable, superhard, and conductors or superconductors depending on boron concentration. However, up to this point, diamond-like boron rich carbides BC{sub x} (dl-BC{sub x}) phases have been thought obtainable only through high pressure and high temperature treatment, necessitating small specimen volume. Here, we use electron energy loss spectroscopy combined with transmission electron microscopy, Raman spectroscopy, surface Brillouin scattering, laser ultrasonics (LU) technique, and analysis of elastic properties to demonstrate that low pressure synthesis (chemical vapor deposition) of BC{sub x} phases may also lead to the creation of diamond-like boronmore » rich carbides. The elastic properties of the dl-BC{sub x} phases depend on the carbon sp²versus sp³ content, which decreases with increasing boron concentration, while the boron bonds determine the shape of the Raman spectra of the dl-BC{sub x} after high pressure-high temperature treatment. Using the estimation of the density value based on the sp³ fraction, the shear modulus μ of dl-BC₄, containing 10% carbon atoms with sp³ bonds, and dl-B₃C₂, containing 38% carbon atoms with sp³ bonds, were found to be μ = 19.3 GPa and μ = 170 GPa, respectively. The presented experimental data also imply that boron atoms lead to a creation of sp³ bonds during the deposition processes.« less

Raman spectra boron doped amorphous carbon thin film deposited by bias assisted-CVD

NASA Astrophysics Data System (ADS)

Ishak, A.; Fadzilah, A. N.; Dayana, K.; Saurdi, I.; Malek, M. F.; Nurbaya, Z.; Shafura, A. K.; Rusop, M.

2018-05-01

Boron doped amorphous carbon thin film carbon was deposited at 200°C-350°C by bias assisted-CVD using palm oil as a precursor material. The structural boron doped amorphous carbon films were discussed by Raman analysis through the evolution of D and G bands. The spectral evolution observed showed the increase of upward shift of D and G peaks as substrate deposition temperatures increased. These structural changes were further correlated with optical gap and the results obtained are discussed and compared. The estimated optical band gap is found to be 1.9 to 2.05 eV and conductivity is to be in the range of 10-5 Scm-1 to 10-4 Scm-1. The decrease of optical band gap is associated to conductivity increased which change the characteristic parameters of Raman spectra including the position of G peak, full width at half maximum of G peak, and ID/IG.

Dangling bond energetics in carbon nitride and phosphorus carbide thin films with fullerene-like and amorphous structure

NASA Astrophysics Data System (ADS)

Gueorguiev, G. K.; Broitman, E.; Furlan, A.; Stafström, S.; Hultman, L.

2009-11-01

The energy cost for dangling bond formation in Fullerene-like Carbon Nitride (FL-CN x) and Phosphorus carbide (FL-CP x) as well as their amorphous counterparts: a-CN x, a-CP x, and a-C has been calculated within the framework of Density Functional Theory and compared with surface water adsorption measurements. The highest energy cost is found in the FL-CN x (about 1.37 eV) followed by FL-CP x compounds (0.62-1.04 eV).

Novel nanometer-level uniform amorphous carbon coating for boron powders by direct pyrolysis of coronene without solvent.

PubMed

Ye, ShuJun; Song, MingHui; Kumakura, Hiroaki

2015-01-30

A 3 nm coronene coating and a 4 nm amorphous carbon coating with a uniform shell-core encapsulation structure for nanosized boron (B) powders are formed by a simple process in which coronene is directly mixed with boron particles without a solvent and heated at 520 °C for 1 h or at 630 °C for 3 h in a vacuum-sealed silica tube. Coronene has a melting point lower than its decomposition temperature, which enables liquid coronene to cover B particles by liquid diffusion and penetration without the need for a solvent. The diffusion and penetration of coronene can extend to the boundaries of particles and to inside the agglomerated nanoparticles to form a complete shell-core encapsulated structure. As the temperature is increased, thermal decomposition of coronene on the B particles results in the formation of a uniform amorphous carbon coating layer. This novel and simple nanometer-level uniform amorphous carbon coating method can possibly be applied to many other powders; thus, it has potential applications in many fields at low cost.

A silicon carbide array for electrocorticography and peripheral nerve recording.

PubMed

Diaz-Botia, C A; Luna, L E; Neely, R M; Chamanzar, M; Carraro, C; Carmena, J M; Sabes, P N; Maboudian, R; Maharbiz, M M

2017-10-01

Current neural probes have a limited device lifetime of a few years. Their common failure mode is the degradation of insulating films and/or the delamination of the conductor-insulator interfaces. We sought to develop a technology that does not suffer from such limitations and would be suitable for chronic applications with very long device lifetimes. We developed a fabrication method that integrates polycrystalline conductive silicon carbide with insulating silicon carbide. The technology employs amorphous silicon carbide as the insulator and conductive silicon carbide at the recording sites, resulting in a seamless transition between doped and amorphous regions of the same material, eliminating heterogeneous interfaces prone to delamination. Silicon carbide has outstanding chemical stability, is biocompatible, is an excellent molecular barrier and is compatible with standard microfabrication processes. We have fabricated silicon carbide electrode arrays using our novel fabrication method. We conducted in vivo experiments in which electrocorticography recordings from the primary visual cortex of a rat were obtained and were of similar quality to those of polymer based electrocorticography arrays. The silicon carbide electrode arrays were also used as a cuff electrode wrapped around the sciatic nerve of a rat to record the nerve response to electrical stimulation. Finally, we demonstrated the outstanding long term stability of our insulating silicon carbide films through accelerated aging tests. Clinical translation in neural engineering has been slowed in part due to the poor long term performance of current probes. Silicon carbide devices are a promising technology that may accelerate this transition by enabling truly chronic applications.

A silicon carbide array for electrocorticography and peripheral nerve recording

NASA Astrophysics Data System (ADS)

Diaz-Botia, C. A.; Luna, L. E.; Neely, R. M.; Chamanzar, M.; Carraro, C.; Carmena, J. M.; Sabes, P. N.; Maboudian, R.; Maharbiz, M. M.

2017-10-01

Objective. Current neural probes have a limited device lifetime of a few years. Their common failure mode is the degradation of insulating films and/or the delamination of the conductor-insulator interfaces. We sought to develop a technology that does not suffer from such limitations and would be suitable for chronic applications with very long device lifetimes. Approach. We developed a fabrication method that integrates polycrystalline conductive silicon carbide with insulating silicon carbide. The technology employs amorphous silicon carbide as the insulator and conductive silicon carbide at the recording sites, resulting in a seamless transition between doped and amorphous regions of the same material, eliminating heterogeneous interfaces prone to delamination. Silicon carbide has outstanding chemical stability, is biocompatible, is an excellent molecular barrier and is compatible with standard microfabrication processes. Main results. We have fabricated silicon carbide electrode arrays using our novel fabrication method. We conducted in vivo experiments in which electrocorticography recordings from the primary visual cortex of a rat were obtained and were of similar quality to those of polymer based electrocorticography arrays. The silicon carbide electrode arrays were also used as a cuff electrode wrapped around the sciatic nerve of a rat to record the nerve response to electrical stimulation. Finally, we demonstrated the outstanding long term stability of our insulating silicon carbide films through accelerated aging tests. Significance. Clinical translation in neural engineering has been slowed in part due to the poor long term performance of current probes. Silicon carbide devices are a promising technology that may accelerate this transition by enabling truly chronic applications.

Defect kinetics and resistance to amorphization in zirconium carbide

NASA Astrophysics Data System (ADS)

Zheng, Ming-Jie; Szlufarska, Izabela; Morgan, Dane

2015-02-01

To better understand the radiation response of zirconium carbide (ZrC), and in particular its excellent resistance to amorphization, we have used density functional theory methods to study the kinetics of point defects in ZrC. The migration barriers and recombination barriers of the simple point defects are calculated using the ab initio molecular dynamics simulation and the nudged elastic band method. These barriers are used to estimate C and Zr interstitial and vacancy diffusion and Frenkel pair recombination rates. A significant barrier for C Frenkel pair recombination is found but it is shown that a large concentration of C vacancies reduces this barrier dramatically, allowing facile healing of radiation damage. The mechanisms underlying high resistance to amorphization of ZrC were analyzed from the perspectives of structural, thermodynamic, chemical and kinetic properties. This study provides insights into the amorphization resistance of ZrC as well as a foundation for understanding general radiation damage in this material.

Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

DOEpatents

Maya, Leon

1994-01-01

Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film.

Chemical precursors to non-oxide ceramics: Macro to nanoscale materials

NASA Astrophysics Data System (ADS)

Forsthoefel, Kersten M.

Non-oxide ceramics exhibit a number of important properties that make them ideal for technologically important applications (thermal and chemical stability, high strength and hardness, wear-resistance, light weight, and a range of electronic and optical properties). Unfortunately, traditional methodologies to these types of materials are limited to fairly simple shapes and complex processed forms cannot be attained through these methods. The establishment of the polymeric precursor approach has allowed for the generation of advanced materials, such as refractory non-oxide ceramics, with controlled compositions, under moderate conditions, and in processed forms. The goal of the work described in this dissertation was both to develop new processible precursors to technologically important ceramics and to achieve the formation of advanced materials in processed forms. One aspect of this research exploited previously developed preceramic precursors to boron carbide, boron nitride and silicon carbide for the generation of a wide variety of advanced materials: (1) ultra-high temperature ceramic (UHTC) structural materials composed of hafnium boride and related composite materials, (2) the quaternary borocarbide superconductors, and (3) on the nanoscale, non-oxide ceramic nanotubules. The generation of the UHTC and the quaternary borocarbide materials was achieved through a method that employs a processible polymer/metal(s) dispersion followed by subsequent pyrolyses. In the case of the UHTC, hafnium oxide, hafnium, or hafnium boride powders were dispersed in a suitable precursor to afford hafnium borides or related composite materials (HfB2/HfC, HfB2/HfN, HfB2/SiC) in high yields and purities. The quaternary borocarbide superconducting materials were produced from pyrolyses of dispersions containing appropriate stoichiometric amounts of transition metal, lanthanide metal, and the polyhexenyldecaborane polymer. Both chemical vapor deposition (CVD) based routes employing a molecular precursor and porous alumina templating routes paired with solution-based methodologies are shown to generate non-oxide ceramic nanotubules of boron carbide, boron nitride and silicon carbide compositions. In the final phase of this work, a new metal-catalyzed route to poly(1-alkenyl- o-carborane) homopolymers and related copolymers was developed. Both homopolymers of 1-alkenyl-o-carboranes (1-vinyl-, 1-butenyl-, 1-hexenyl-) and copolymers of 1-hexenyl-o-carborane and allyltrimethylsilane or 1-hexenyl-o-carborane and 6-hexenyldecaborane were synthesized via the Cp2ZrMe2/B(C6F5) 3 catalyst system. A copolymer containing 1-hexenyl-o-carborane and the cross-linking agent, 6-hexenyldecaborane, was synthetically designed which exhibits initial cross-linking at ˜250°C and then converts in 75% yields to boron carbide at 1250°C.

Structure and Tribological Properties of B83 Babbit-Based Composite Rods and the Coatings Produced from Them by Arc Surfacing

NASA Astrophysics Data System (ADS)

Bolotova, L. K.; Kalashnikov, I. E.; Kobeleva, L. I.; Katin, I. E.; Kolmakov, A. G.; Mikheev, R. S.; Kobernik, N. V.; Podymova, N. B.

2018-01-01

Surfacing composite rods based on a B83 babbit alloy reinforced by silicon carbide and boron carbide particles are fabricated by extrusion. The structure and the tribological properties of the rods are studied. Extrusion allowed us to introduce and to uniformly distribute reinforcing fillers and to change the size and the morphology of the intermetallic phases in the matrix alloy. The wear resistance of the rods made of the B83 babbit + 5 wt % SiC composite material is shown to be higher than that of commercial B83 alloy samples by a factor of 1.2. Arc surfacing is used to deposit antifriction coatings, which are made of the surfacing composite rods based on B83 babbit reinforced by boron carbide or silicon carbide particles, onto steel substrates. The deposited layers exhibit good adhesion to the substrates: the melting line is continuous and does not contain discontinuities. The structure and the tribological properties of the deposited coatings are studied. The wear resistance of the composite coatings is higher than that of the B83 alloy-based coating by 30%.

Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

NASA Technical Reports Server (NTRS)

Chu, T. L.

1975-01-01

The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

Methods of forming boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J

A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boronmore » nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.« less

Natural precursor based hydrothermal synthesis of sodium carbide for reactor applications

NASA Astrophysics Data System (ADS)

Swapna, M. S.; Saritha Devi, H. V.; Sebastian, Riya; Ambadas, G.; Sankararaman, S.

2017-12-01

Carbides are a class of materials with high mechanical strength and refractory nature which finds a wide range of applications in industries and nuclear reactors. The existing synthesis methods of all types of carbides have problems in terms of use of toxic chemical precursors, high-cost, etc. Sodium carbide (Na2C2) which is an alkali metal carbide is the least explored one and also that there is no report of low-cost and low-temperature synthesis of sodium carbide using the eco-friendly, easily available natural precursors. In the present work, we report a simple low-cost, non-toxic hydrothermal synthesis of refractory sodium carbide using the natural precursor—Pandanus. The formation of sodium carbide along with boron carbide is evidenced by the structural and morphological characterizations. The sample thus synthesized is subjected to field emission scanning electron microscopy (FESEM), x-ray powder diffraction (XRD), ultraviolet (UV)—visible spectroscopy, Fourier transform infrared spectroscopy (FTIR), Raman, and photoluminescent (PL) spectroscopic techniques.

Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

DOEpatents

Maya, L.

1994-06-14

Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film. 11 figs.

Synthesizing and characterization of titanium diboride for composite bipolar plates in PEM fuel cell

NASA Astrophysics Data System (ADS)

Duddukuri, Ramesh

This research deals with the synthesis and characterization of titanium diboride (TiB2) from novel carbon coated precursors. This work provides information on using different boron sources and their effect on the resulting powders of TiB2. The process has two steps in which the oxide powders were first coated with carbon by cracking of a hydrocarbon gas, propylene (C3H6) and then, mixed with boron carbide and boric acid powders in a stoichiometric ratio. These precursors were treated at temperatures in the range of 1200--1400° C for 2 h in flowing Argon atmosphere to synthesize TiB2. The process utilizes a carbothermic reduction reaction of novel carbon coated precursor that has potential of producing high-quality powders (sub-micrometer and high purity). Single phase TiB2 powders produced, were compared with commercially available titanium diboride using X-ray diffraction and Transmission electron microscopy obtained from boron carbide and boric acid containing carbon coated precursor.

Laser induced heating of coated carbon steel sheets: Consideration of melting and Marangoni flow

NASA Astrophysics Data System (ADS)

Shuja, S. Z.; Yilbas, B. S.

2013-04-01

Laser induced melting of coated carbon steel workpiece is simulated. The coating materials include tungsten carbide, alumina, and boron are incorporated in the simulations. The coating thickness is kept constant at 7.5 μm in the analysis. The enthalpy porosity method is used to account for the phase change in the irradiated region. The study is extended to include the influence of laser intensity transverse mode pattern (β) on the resulting melting characteristics. It is found that peak temperature predicted at the surface is higher for alumina and boron coatings than that of tungsten carbide coating. The influence of the laser intensity transverse mode pattern on the melting characteristics is considerable. Surface temperature predicted agrees with the thermocouple data.

PRODUCTION OF BORON CARBIDES IN CARBON REDUCTION OF RARE EARTH MIXTURES WITH BORON (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Markovskii, L.Ya.; Vekshina, N.V.; Pron, G.F.

1962-09-01

Carbon reduction of CeO/sub 2/ or La/sub 2/O/sub 3/ mixtures with B at 1900 to 2000 deg C produced borocarbides similar to Ca, Sr, and Ba borocarbides. The synthesized products contained considerable amounts of chemically unstable compounds that in hydrolytic disintegration transform into a boronmetal solution and carbon. (R.V.J.)

Reinforced Carbon Nanotubes.

DOEpatents

Ren, Zhifen; Wen, Jian Guo; Lao, Jing Y.; Li, Wenzhi

2005-06-28

The present invention relates generally to reinforced carbon nanotubes, and more particularly to reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.

Microstructures of BN/SiC coatings on nicalon fibers

NASA Technical Reports Server (NTRS)

Dickerson, R. M.; Singh, M.

1995-01-01

The microstructures of Nicalon silicon carbide (SiC) fibers and layered coatings of boron nitride (BN) followed by chemical vapor infiltrated silicon carbide (CVI-SiC) were characterized using optical and electron microscopy. Two different precursors and reactions were used to produce the BN layers while the deposition of CVI silicon carbide was nearly identical. Coated tows were examined in cross-section to characterize the chemistry and structures of the constituents and the interfaces. One BN precursor yielded three sublayers while the other gave a relatively homogeneous nanocrystalline layer.

Electron irradiation induced phase separation in a sodium borosilicate glass

NASA Astrophysics Data System (ADS)

Sun, K.; Wang, L. M.; Ewing, R. C.; Weber, W. J.

2004-06-01

Electron irradiation induced phase separation in a sodium borosilicate glass was studied in situ by analytical electron microscopy. Distinctly separate phases that are rich in boron and silicon formed at electron doses higher than 4.0 × 10 11 Gy during irradiation. The separated phases are still in amorphous states even at a much high dose (2.1 × 10 12 Gy). It indicates that most silicon atoms remain tetrahedrally coordinated in the glass during the entire irradiation period, except some possible reduction to amorphous silicon. The particulate B-rich phase that formed at high dose was identified as amorphous boron that may contain some oxygen. Both ballistic and ionization processes may contribute to the phase separation.

Investigation of Isotopically Tailored Boron in Advanced Fission and Fusion Reactor Systems.

NASA Astrophysics Data System (ADS)

Domaszek, Gerald Raymond

This research examines the use of B^ {11}, in the form of metallic boron and boron carbide, as a moderating and reflecting material. An examination of the neutronic characteristics of the B ^{11} isotope of boron has revealed that B^{11} has neutron scattering and absorption cross sections favorably comparable to those of Be^9 and C^ {12}. Preliminary analysis of the neutronics of B ^{11} were performed by conducting one dimensional transport calculations on an infinite slab of varying thickness. Beryllium is the best of the three materials in reflecting neutrons due primarily to the contribution from (n,2n) reactions. Tailored neutron energy beam transmission experiments were carried out to experimentally verify the predicted neutronic characteristics of B^{11 }. To further examine the neutron moderating and reflecting characteristics of B^{11 }, the energy dependent neutron flux was measured as a function of position in an exponential pile constructed of B_4C isotopically enriched to 98.5 percent B^{11}. After the experimental verification of the neutronic behavior of B^{11}, further design studies were conducted using metallic boron and boron carbide enriched in the B^{11 } isotope. The use of materials isotopically enriched in B^{11} as a liner in the first wall/blanket of a magnetic confinement fusion reactor demonstrated acceptable tritium regeneration in the lithium blanket. Analysis of the effect of contaminant levels of B^{10} showed that B^{10} contents of less than 1 percent in metallic boron produced negligible adverse effects on the tritium breeding. A comparison of the effectiveness of graphite and B^{11}_4C when used as moderators in a reactor fueled with natural uranium has shown that the maximum k_infty for a given fuel rod design is approximately the same for both materials. Approximately half the volume of the moderator is required when B^{11 }_4C is substituted for graphite to obtain essentially the same K_infty . An analysis of the effectiveness of various materials as reflector control elements for a compact space reactor has shown that B^{11} is neutronically superior to graphite in these applications. Metallic boron and boron carbide isotopically enriched in B^{11} have been demonstrated to be neutronically acceptable for varied applications in advanced reactor systems. B^ {11} has been shown to be superior in performance to graphite. While only somewhat inferior to beryllium as neutron multipliers, B^ {11} and B^{11} _4C have safety, supply and cost advantage over beryllium. (Abstract shortened with permission of author.).

Formation of polycrystalline MgB2 synthesized by powder in sealed tube method with different initial boron phase

NASA Astrophysics Data System (ADS)

Yudanto, Sigit Dwi; Imaduddin, Agung; Kurniawan, Budhy; Manaf, Azwar

2018-04-01

Magnesium diboride, MgB2 is a new high critical temperature superconductor that discovered in the beginning of the 21st century. The MgB2 has a simple crystal structure and a high critical temperature, which can be manufactured in several forms like thin films, tapes, wires including bulk in the large scale. For that reason, the MgB2 has good prospects for various applications in the field of electronic devices. In the current work, we have explored the synthesis of MgB2 polycrystalline using powder in a sealed tube method. Different initial boron phase for the synthesized of MgB2 polycrystalline were used. These were, in addition to magnesium powders, crystalline boron, amorphous boron and combination both of them were respectively fitted in the synthesis. The raw materials were mixed in a stoichiometric ratio of Mg: B=1:2, ground using agate mortar, packed into stainless steel SS304. The pack was then sintered at temperature of 800°C for 2 hours in air atmosphere. Phase formation of MgB2 polycrystalline in difference of initial boron phase was characterized using XRD and SEM. Referring to the diffraction pattern and microstructure observation, MgB2 polycrystalline was formed, and the formation was effective when using the crystalline Mg and fully amorphous B as the raw materials. The critical temperature of the specimen was evaluated by the cryogenic magnet. The transition temperature of the MgB2 specimen synthesized using crystalline magnesium and full amorphous boron is 42.678 K (ΔTc = 0.877 K).

Design of cemented tungsten carbide and boride-containing shields for a fusion power plant

NASA Astrophysics Data System (ADS)

Windsor, C. G.; Marshall, J. M.; Morgan, J. G.; Fair, J.; Smith, G. D. W.; Rajczyk-Wryk, A.; Tarragó, J. M.

2018-07-01

Results are reported on cemented tungsten carbide (cWC) and boride-containing composite materials for the task of shielding the centre column of a superconducting tokamak power plant. The shield is based on five concentric annular shells consisting of cWC and water layers of which the innermost cWC shield can be replaced with boride composites. Sample materials have been fabricated changing the parameters of porosity P, binder alloy fraction f binder and boron weight fraction f boron. For the fabricated materials, and other hypothetical samples with chosen parameters, Monte Carlo studies are made of: (i) the power deposition into the superconducting core, (ii) the fast neutron and gamma fluxes and (iii) the attenuation coefficients through the shield for the deposited power and neutron and gamma fluxes. It is shown that conventional Co-based cWC binder alloy can be replaced with a Fe–Cr alloy (92 wt.% Fe, 8 wt.% Cr), which has lower activation than cobalt with minor changes in shield performance. Boride-based composite materials have been prepared and shown to give a significant reduction in power deposition and flux, when placed close to the superconducting core. A typical shield of cemented tungsten carbide with 10 wt.% of Fe–8Cr binder and 0.1% porosity has a power reduction half-length of 0.06 m. It is shown that the power deposition increases by 4.3% for every 1% additional porosity, and 1.7% for every 1 wt.% additional binder. Power deposition decreased by 26% for an initial 1 wt.% boron addition, but further increases in f boron showed only a marginal decrease. The dependences of power deposited in the core, the maximum neutron and gamma fluxes on the core surface, and the half attenuation distances through the shield have been fitted to within a fractional percentage error by analytic functions of the porosity, metallic binder alloy and boron weight fractions.

Beta cell device using icosahedral boride compounds

DOEpatents

Aselage, Terrence L.; Emin, David

2002-01-01

A beta cell for converting beta-particle energies into electrical energy having a semiconductor junction that incorporates an icosahedral boride compound selected from B.sub.12 As.sub.2, B.sub.12 P.sub.2, elemental boron having an .alpha.-rhombohedral structure, elemental boron having a .beta.-rhombohedral structure, and boron carbides of the chemical formula B.sub.12-x C.sub.3-x, where 0.15

Lightweight graphene nanoplatelet/boron carbide composite with high EMI shielding effectiveness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, Yongqiang; Luo, Heng; Zhang, Haibin, E-mail: hbzhang@caep.cn, E-mail: pengshuming@caep.cn

2016-03-15

Lightweight graphene nanoplatelet (GNP)/boron carbide (B{sub 4}C) composites were prepared and the effect of GNPs loading on the electromagnetic interference (EMI) shielding effectiveness (SE) has been evaluated in the X-band frequency range. Results have shown that the EMI SE of GNP/B{sub 4}C composite increases with increasing the GNPs loading. An EMI SE as high as 37 ∼ 39 dB has been achieved in composite with 5 vol% GNPs. The high EMI SE is mainly attributed to the high electrical conductivity, high dielectric loss as well as multiple reflections by aligned GNPs inside the composite. The GNP/B{sub 4}C composite is demonstratedmore » to be promising candidate of high-temperature microwave EMI shielding material.« less

Boron nitride - Composition, optical properties, and mechanical behavior

NASA Technical Reports Server (NTRS)

Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

1987-01-01

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Boron nitride: Composition, optical properties and mechanical behavior

NASA Technical Reports Server (NTRS)

Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

1987-01-01

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1993-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1995-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1993-04-20

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1995-02-14

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

Threshold irradiation dose for amorphization of silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Snead, L.L.; Zinkle, S.J.

1997-04-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenonmore » ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.« less

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

Significantly enhanced critical current density in nano-MgB2 grains rapidly formed at low temperature with homogeneous carbon doping

NASA Astrophysics Data System (ADS)

Liu, Yongchang; Lan, Feng; Ma, Zongqing; Chen, Ning; Li, Huijun; Barua, Shaon; Patel, Dipak; Shahriar, M.; Hossain, Al; Acar, S.; Kim, Jung Ho; Xue Dou, Shi

2015-05-01

High performance MgB2 bulks using carbon-coated amorphous boron as a boron precursor were fabricated by Cu-activated sintering at low temperature (600 °C, below the Mg melting point). Dense nano-MgB2 grains with a high level of homogeneous carbon doping were formed in these MgB2 samples. This type of microstructure can provide a stronger flux pinning force, together with depressed volatility and oxidation of Mg owing to the low-temperature Cu-activated sintering, leading to a significant improvement of critical current density (Jc) in the as-prepared samples. In particular, the value of Jc for the carbon-coated (Mg1.1B2)Cu0.05 sample prepared here is even above 1 × 105 A cm-2 at 20 K, 2 T. The results herein suggest that the combination of low-temperature Cu-activated sintering and employment of carbon-coated amorphous boron as a precursor could be a promising technique for the industrial production of practical MgB2 bulks or wires with excellent Jc, as the carbon-coated amorphous boron powder can be produced commercially at low cost, while the addition of Cu is very convenient and inexpensive.

Combustion Enhancement of Liquid Fuels via Nanoparticle Additions: Screening, Dispersion, and Characterization

DTIC Science & Technology

2015-06-04

These include but are not limited to aluminum, boron, boron carbide (B4C), carbon (graphene), titanium, and tungsten nano-sized particles. When...of plots displaying calculated values for aluminum, titanium, and tungsten additives are shown in Figure 1 to illustrate the potential benefits...of additive weight percent and oxidizer/fuel mixture ratio for aluminum, titanium, and tungsten . With recent improvements in the production and

Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals

DOEpatents

Farmer, Joseph C.; Wong, Frank M.G.; Haslam, Jeffery J.; Yang, Nancy; Lavernia, Enrique J.; Blue, Craig A.; Graeve, Olivia A.; Bayles, Robert; Perepezko, John H.; Kaufman, Larry; Schoenung, Julie; Ajdelsztajn, Leo

2014-07-15

A system for coating a surface comprises providing a source of amorphous metal, providing ceramic particles, and applying the amorphous metal and the ceramic particles to the surface by a spray. The coating comprises a composite material made of amorphous metal that contains one or more of the following elements in the specified range of composition: yttrium (.gtoreq.1 atomic %), chromium (14 to 18 atomic %), molybdenum (.gtoreq.7 atomic %), tungsten (.gtoreq.1 atomic %), boron (.ltoreq.5 atomic %), or carbon (.gtoreq.4 atomic %).

Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals

DOEpatents

Farmer, Joseph C [Tracy, CA; Wong, Frank M. G. [Livermore, CA; Haslam, Jeffery J [Livermore, CA; Yang, Nancy [Lafayette, CA; Lavernia, Enrique J [Davis, CA; Blue, Craig A [Knoxville, TN; Graeve, Olivia A [Reno, NV; Bayles, Robert [Annandale, VA; Perepezko, John H [Madison, WI; Kaufman, Larry [Brookline, MA; Schoenung, Julie [Davis, CA; Ajdelsztajn, Leo [Walnut Creek, CA

2009-11-17

A system for coating a surface comprises providing a source of amorphous metal, providing ceramic particles, and applying the amorphous metal and the ceramic particles to the surface by a spray. The coating comprises a composite material made of amorphous metal that contains one or more of the following elements in the specified range of composition: yttrium (.gtoreq.1 atomic %), chromium (14 to 18 atomic %), molybdenum (.gtoreq.7 atomic %), tungsten (.gtoreq.1 atomic %), boron (.ltoreq.5 atomic %), or carbon (.gtoreq.4 atomic %).

Magnetron sputtered boron films

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1998-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1998-06-16

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

Special features of the technology of boronizing steel in a calcium chloride melt

NASA Astrophysics Data System (ADS)

Chernov, Ya. B.; Anfinogenov, A. I.; Veselov, I. N.

1999-12-01

A technology for hardening machine parts and tools by boronizing in molten calcium chloride with amorphous-boron powder in electrode salt baths has been developed with the aim of creating a closed cycle of utilizing the raw materials and the washing water. A process of boronizing that includes quenching and tempering of the boronized articles is described. The quenching medium is an ecologically safe and readily available aqueous solution of calcium chloride. The process envisages return of the melt components to the boronizing bath. Boronizing by the suggested method was tested for different classes of steel, namely, structural and tool steels for cold and hot deformation. The wear resistance of the boronized steels was studied.

Fibrous refractory composite insulation. [shielding reusable spacecraft

NASA Technical Reports Server (NTRS)

Leiser, D. B.; Goldstein, H. E.; Smith, M. (Inventor)

1979-01-01

A refractory composite insulating material was prepared from silica fibers and aluminosilicate fibers in a weight ratio ranging from 1:19 to 19:1, and about 0.5 to 30% boron oxide, based on the total fiber weight. The aluminosilicate fiber and boron oxide requirements may be satisfied by using aluminoborosilicate fibers and, in such instances, additional free boron oxide may be incorporated in the mix up to the 30% limit. Small quantities of refractory opacifiers, such as silicon carbide, may be also added. The composites just described are characterized by the absence of a nonfibrous matrix.

In Situ Mechanical Property Measurements of Amorphous Carbon-Boron Nitride Nanotube Nanostructures

NASA Technical Reports Server (NTRS)

Kim, Jae-Woo; Lin, Yi; Nunez, Jennifer Carpena; Siochi, Emilie J.; Wise, Kristopher E.; Connell, John W.; Smith, Michael W.

2011-01-01

To understand the mechanical properties of amorphous carbon (a-C)/boron nitride nanotube (BNNT) nanostructures, in situ mechanical tests are conducted inside a transmission electron microscope equipped with an integrated atomic force microscope system. The nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation. We demonstrate multiple in situ tensile, compressive, and lap shear tests with a-C/BNNT hybrid nanostructures. The tensile strength of the a-C/BNNT hybrid nanostructure is 5.29 GPa with about 90 vol% of a-C. The tensile strength and strain of the end-to-end joint structure with a-C welding is 0.8 GPa and 5.2% whereas the lap shear strength of the side-by-side joint structure with a-C is 0.25 GPa.

Ionic-liquid mediated olefin hydroboration and heteroatom insertion reactions, and the development of template routes to non-oxide ceramic nano- and micro-structures

NASA Astrophysics Data System (ADS)

Kusari, Upal

The goal of the work described in this dissertation was two-fold: (1) To use the unique properties of ionic liquids to develop new synthetic routes to boron-containing molecules including substituted decaboranes, ortho-carboranes and chalcogeno-boranes, and (2) to combine newly developed chemical precursors with template routes to fabricate the non-oxide ceramics boron carbide, silicon carbide and boron nitride on the micro- and nano-scales. The first application of ionic liquid and related salt systems to the hydroboration of a variety of olefins with the polyborane cage B10H 14, leading to the syntheses of functionalized decaborane clusters, 6-R-B10H13, was demonstrated. The decaborane olefin-hydroboration reaction was found to proceed with a wide variety of functional olefins, including, alkenyl, halide, phenyl, ether, ester, pinacolborane, ketone and alcohol-containing olefins. These reactions provide a general, simple, one-pot and high-yield alternative route to functional boranes. The functional decaboranes were then converted by another ionic liquid mediated reaction, to its ortho -carborane derivatives 3-R-1,2-Et2C2B 10H9. Experimental and computational studies of the hydroboration mechanism suggest that the ionic liquid induced the formation of the B 10H13- anion which behaved as an electrophile in the olefin-hydroboration reaction. The unique properties of ionic liquids were also found to be useful in mediating the insertion of chalcogen heteroatoms into the borane clusters nido-B10H14, nido-5,6-C2B8H12 and arachno -4-CB8H14 and led to the improved syntheses of the known compounds nido-7-SB10H12, nido-7-SeB10H12, nido-7,9,10-SC 2B8H10, nido-7,9,10-SeC 2B8H10 and arachno-6,9-CSB 8H12, as well as the synthesis of the new 10-vertex selena-monocarbaborane arachno-6,9-CSeB8H12 (˜40% yield). The second part of the thesis demonstrated that newly developed chemical precursors can be used in conjunction with silica bead and diatom frustule templates to generate highly uniform, nanoporous layered materials and 3-D, free-standing nano- and micro-structures of boron carbide, boron nitride and silicon carbide. The retention of structural features on the micron and nanometer length scales, allowed the fabrication of advanced materials with a range of potential applications, as shown by the production of a SiC/BN-microbasket composite using the frustule template-derived boron nitride replicas.

Anode performance of boron-doped graphites prepared from shot and sponge cokes

NASA Astrophysics Data System (ADS)

Liu, Tao; Luo, Ruiying; Yoon, Seong-Ho; Mochida, Isao

The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g -1 and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by "molecular bridging" between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper.

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

NASA Astrophysics Data System (ADS)

Dinh, Toan; Viet Dao, Dzung; Phan, Hoang-Phuong; Wang, Li; Qamar, Afzaal; Nguyen, Nam-Trung; Tanner, Philip; Rybachuk, Maksym

2015-06-01

We report on the temperature dependence of the charge transport and activation energy of amorphous silicon carbide (a-SiC) thin films grown on quartz by low-pressure chemical vapor deposition. The electrical conductivity as characterized by the Arrhenius rule was found to vary distinctly under two activation energy thresholds of 150 and 205 meV, corresponding to temperature ranges of 300 to 450 K and 450 to 580 K, respectively. The a-SiC/quartz system displayed a high temperature coefficient of resistance ranging from -4,000 to -16,000 ppm/K, demonstrating a strong feasibility of using this material for highly sensitive thermal sensing applications.

Liquid phase sintering of silicon carbide

DOEpatents

Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

1989-05-09

Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

Liquid phase sintering of silicon carbide

DOEpatents

Cutler, Raymond A.; Virkar, Anil V.; Hurford, Andrew C.

1989-01-01

Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

Finding the Stable Structures of WxN1-x with an ab-initio High-Throughput Approach

DTIC Science & Technology

2014-03-13

cubic boron nitride[4], carbonitrides,[5] and transition metal borides .[6, 7] Over the past several years there has been considerable theoretical...include ionic and covalent structures which seem chemically similar to W-N. These include borides , carbides, oxides, and other nitrides. In this paper we...metallic alloys, [23–27] we extended it to include over fifty new structures. These include nitrides, oxides, borides , and carbides. The important

Metal Bonded Titanium Diboride

DTIC Science & Technology

1952-03-01

removed by leaching in a 1:1 solution of 99.5% acetic acid . Previous attempts to remove iron contaminati.on by leaching in hydrochloric acid resulted in...to cool with the furnace. The fired specimens were measured and sawed into two parts with a diamond cut off wheel . Density determinations were made...first ground on a cast iron lap with 100 mesh silicon carbide. This was followed by two stages of grinding with 500 grit and 800 grit boron carbide on a

Ceramic Coating Method

DTIC Science & Technology

2002-07-02

cobalt , zirconia, boron carbide, BN, SiC, Si3 N4, zirconium carbide, chromium , gold, silver, platinum, osmium, and the like. The TiB2 (melting point 29000...possible with the new diamond doping Periodic Table such as N, P, As, Sb, Bi, V, Cb, Ta, Pa; method. elements in the Sixth Group (0, S, Se, Te, Po, Cr ...also the surface of many reactive others are done at low temperatures to avoid unwanted metals such as aluminum, magnesium, chromium , silicon, thermal

High-Efficiency Silicon Carbide (SiC) Converters. Delivery Order 0001: Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide

DTIC Science & Technology

2004-03-01

32 Silicon Dioxide as a Mask ......................................................... 34 Silicon Nitride as a Mask...phosphorous (P), and arsenic (As) for n-type material and aluminum (Al), boron (B), beryllium (Be), gallium (Ga), oxygen (O), and scandium (Sc) for...O2 in carbon tetrafluoride (CF4), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6) were observed because these gases produce high fluorine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolopus, James A.; Boatner, Lynn A.

Nanoindenters are commonly used for measuring the mechanical properties of a wide variety of materials with both industrial and scientific applications. Typically, these instruments employ an indenter made of a material of suitable hardness bonded to an appropriate shaft or holder to create an indentation on the material being tested. While a variety of materials may be employed for the indenter, diamond and boron carbide are by far the most common materials used due to their hardness and other desirable properties. However, as the increasing complexity of new materials demands a broader range of testing capabilities, conventional indenter materials exhibitmore » significant performance limitations. Among these are the inability of diamond indenters to perform in-situ measurements at temperatures above 600oC in air due to oxidation of the diamond material and subsequent degradation of the indenters mechanical properties. Similarly, boron carbide also fails at high temperature due to fracture. [1] Transition metal carbides possess a combination of hardness and mechanical properties at high temperatures that offer an attractive alternative to conventional indenter materials. Here we describe the technical aspects for the growth of single-crystal tungsten carbide (WC) for use as a high-temperature indenter material, and we examine a possible approach to brazing these crystals to a suitable mount for grinding and attachment to the indenter instrument. The use of a by-product of the recovery process is also suggested as possibly having commercial value.« less

Annealing induced structural changes in amorphous Co{sub 23}Fe{sub 60}B{sub 17} film on Mo buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, Jagrati, E-mail: jdwivedi.phy@gmail.com; Mishra, Ashutosh; Gupta, Ranjeeta

2016-05-23

Structural changes occurring in a thin amorphous Co{sub 23}Fe{sub 60}B{sub 17} film sandwiched between two Mo layers, as a function of thermal annealing has been studied. Thermal stability of the Co{sub 23}Fe{sub 60}B{sub 17} film is found to be significantly lower than the bulk ribbons. SIMS measurements show that during crystallization, boron which is expelled out of the crystallites, has a tendency to move towards the surface. No significant diffusion of boron in Mo buffer layer is observed. This result is in contrast with some earlier studies where it was proposed that the role of buffer layer of refractory metalmore » is to absorb boron which is expelled out of the bcc FeCo phase during crystallization.« less

Microstructure and surface chemistry of amorphous alloys important to their friction and wear behavior

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1983-01-01

An investigation was conducted to examine the microstructure and surface chemistry of amorphous alloys, and their effects on tribological behavior. The results indicate that the surface oxide layers present on amorphous alloys are effective in providing low friction and a protective film against wear in air. Clustering and crystallization in amorphous alloys can be enhanced as a result of plastic flow during the sliding process at a low sliding velocity, at room temperature. Clusters or crystallines with sizes to 150 nm and a diffused honeycomb-shaped structure are produced on the wear surface. Temperature effects lead to drastic changes in surface chemistry and friction behavior of the alloys at temperatures to 750 C. Contaminants can come from the bulk of the alloys to the surface upon heating and impart to the surface oxides at 350 C and boron nitride above 500 C. The oxides increase friction while the boron nitride reduces friction drastically in vacuum.

Magnetron sputtered boron films for increasing hardness of a metal surface

DOEpatents

Makowiecki, Daniel M [Livermore, CA; Jankowski, Alan F [Livermore, CA

2003-05-27

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Plasma deposition of amorphous silicon carbide thin films irradiated with neutrons

NASA Astrophysics Data System (ADS)

Huran, J.; Bohacek, P.; Kucera, M.; Kleinova, A.; Sasinkova, V.; IEE SAS, Bratislava, Slovakia Team; Polymer Institute, SAS, Bratislava, Slovakia Team; Institute of Chemistry, SAS, Bratislava, Slovakia Team

2015-09-01

Amorphous silicon carbide and N-doped silicon carbide thin films were deposited on P-type Si(100) wafer by plasma enhanced chemical vapor deposition (PECVD) technology using silane, methane, ammonium and argon gases. The concentration of elements in the films was determined by RBS and ERDA method. Chemical compositions were analyzed by FTIR spectroscopy. Photoluminescence properties were studied by photoluminescence spectroscopy (PL). Irradiation of samples with various neutron fluencies was performed at room temperature. The films contain silicon, carbon, hydrogen, nitrogen and small amount of oxygen. From the IR spectra, the films contained Si-C, Si-H, C-H, Si-N, N-H and Si-O bonds. No significance effect on the IR spectra after neutron irradiation was observed. PL spectroscopy results of films showed decreasing PL intensity after neutron irradiation and PL intensity decreased with increased neutron fluencies. The measured current of the prepared structures increased after irradiation with neutrons and rise up with neutron fluencies.

Silicon Oxycarbide Aerogels for High-Temperature Thermal Insulation

NASA Technical Reports Server (NTRS)

Evans, Owen; Rhine, Wendell; Coutinho, Decio

2010-01-01

This work has shown that the use of SOC-A35 leads to aerogel materials containing a significant concentration of carbidic species and limited amorphous free carbon. Substitution of the divalent oxide species in silica with tetravalent carbidic carbon has directly led to materials that exhibit increased network viscosity, reduced sintering, and limited densification. The SiOC aerogels produced in this work have the highest carbide content of any dense or porous SiOC glass reported in the literature at that time, and exhibit tremendous long-term thermal stability.

Development of Nanomaterials for Nuclear Energetics

NASA Astrophysics Data System (ADS)

Petrunin, V. F.

Structure and properties peculiarities of the nanocrystalline powders give the opportunity to design new and to develop a modernization of nuclear energy industry materials. It was shown experimentally, that addition of 5-10% uranium dioxide nanocrystalline powder to traditional coarse powder allows to decrease the sintering temperature or to increase the fuel tablets size of grain. Similar perspectives for the technology of neutron absorbing tablets of control-rod modernization are shown by nanopowder of dysprosium hafnate changing instead now using boron carbide. It is powders in nanocrystalline state get an opportunity to sinter them and to receive compact tablet with 8,2-8,4 g/cm2 density for automatic defence system of nuclear reactor. Resource of dysprosium hafnate ceramics can be 18-20 years instead 4-5 years for boron carbide. To step up the radiation-damage stability of fuel element jacket material was suggested to strengthen a heat-resistant ferrite-martensite steel by Y2O3 nanocrystalline powder addition. Nanopowder with size of particles 560 nm and crystallite size 9 nm was prepeared by chemical coprecipitation method. To make lighter the container for transport and provisional disposal of exposed fuel from nuclear reactor a new boron-aluminium alloy called as boral was developed. This composite armed with nanopowders of boron-containing materials and heavy metals oxides can replace succesburnt-up corrosion-resistant steels.

Creep Behavior in Interlaminar Shear of a SiC/SiC Ceramic Composite with a Self-healing Matrix

NASA Astrophysics Data System (ADS)

Ruggles-Wrenn, M. B.; Pope, M. T.

2014-02-01

Creep behavior in interlaminar shear of a non-oxide ceramic composite with a multilayered matrix was investigated at 1,200 °C in laboratory air and in steam environment. The composite was produced via chemical vapor infiltration (CVI). The composite had an oxidation inhibited matrix, which consisted of alternating layers of silicon carbide and boron carbide and was reinforced with laminated Hi-Nicalon™ fibers woven in a five-harness-satin weave. Fiber preforms had pyrolytic carbon fiber coating with boron carbide overlay applied. The interlaminar shear properties were measured. The creep behavior was examined for interlaminar shear stresses in the 16-22 MPa range. Primary and secondary creep regimes were observed in all tests conducted in air and in steam. In air and in steam, creep run-out defined as 100 h at creep stress was achieved at 16 MPa. Larger creep strains were accumulated in steam. However, creep strain rates and creep lifetimes were only moderately affected by the presence of steam. The retained properties of all specimens that achieved run-out were characterized. Composite microstructure, as well as damage and failure mechanisms were investigated.

Delivery of Cisplatin Anti-Cancer Drug from Carbon, Boron Nitride, and Silicon Carbide Nanotubes Forced by Ag-Nanowire: A Comprehensive Molecular Dynamics Study.

PubMed

Mehrjouei, Esmat; Akbarzadeh, Hamed; Shamkhali, Amir Nasser; Abbaspour, Mohsen; Salemi, Sirous; Abdi, Pooya

2017-07-03

In this work, liberation of cisplatin molecules from interior of a nanotube due to entrance of an Ag-nanowire inside it was simulated by classical molecular dynamics method. The aim of this simulation was investigation on the effects of diameter, chirality, and composition of the nanotube, as well as the influence of temperature on this process. For this purpose, single walled carbon, boron nitride, and silicon carbide nanotube were considered. In order for a more concise comparison of the results, a new parameter namely efficiency of drug release, was introduced. The results demonstrated that the efficiency of drug release is sensitive to its adsorption on outer surface of the nanotube. Moreover, this efficiency is also sensitive to the nanotube composition and its diameter. For the effect of nanotube composition, the results indicated that silicon carbide nanotube has the least efficiency for drug release, due to its strong drug-nanotube. Also, the most important acting forces on drug delivery are van der Waals interactions. Finally, the kinetic of drug release is fast and is not related to the structural parameters of the nanotube and temperature, significantly.

Complex shaped boron carbides from negative additive manufacturing

DOE PAGES

Lu, Ryan; Chandrasekaran, Swetha; Du Frane, Wyatt L.; ...

2018-03-13

In this paper, complex shaped boron carbide with carbon (B 4C/C) at near-full densities were achieved for the first time using negative additive manufacturing techniques via gelcasting. Negative additive manufacturing involves 3D printing of sacrificial molds used for casting negative copies. B 4C powder distributions and rheology of suspensions were optimized to successfully cast complex shapes. In addition to demonstrating scalability of these complex geometries, hierarchically meso-porous structures were also shown to be possible from this technique. Resorcinol-Formaldehyde (RF) polymer was selected as the gelling agent and can also pyrolyze into a carbon aerogel network to act as the sinteringmore » aid for B 4C. Finally, due to the highly effective distribution of in situ carbon for the B 4C matrix, near-full sintered density of 97–98% of theoretical maximum density was achieved.« less

Complex shaped boron carbides from negative additive manufacturing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Ryan; Chandrasekaran, Swetha; Du Frane, Wyatt L.

In this paper, complex shaped boron carbide with carbon (B 4C/C) at near-full densities were achieved for the first time using negative additive manufacturing techniques via gelcasting. Negative additive manufacturing involves 3D printing of sacrificial molds used for casting negative copies. B 4C powder distributions and rheology of suspensions were optimized to successfully cast complex shapes. In addition to demonstrating scalability of these complex geometries, hierarchically meso-porous structures were also shown to be possible from this technique. Resorcinol-Formaldehyde (RF) polymer was selected as the gelling agent and can also pyrolyze into a carbon aerogel network to act as the sinteringmore » aid for B 4C. Finally, due to the highly effective distribution of in situ carbon for the B 4C matrix, near-full sintered density of 97–98% of theoretical maximum density was achieved.« less

Equation of state for shock compression of distended solids

NASA Astrophysics Data System (ADS)

Grady, Dennis; Fenton, Gregg; Vogler, Tracy

2014-05-01

Shock Hugoniot data for full-density and porous compounds of boron carbide, silicon dioxide, tantalum pentoxide, uranium dioxide and playa alluvium are investigated for the purpose of equation-of-state representation of intense shock compression. Complications of multivalued Hugoniot behavior characteristic of highly distended solids are addressed through the application of enthalpy-based equations of state of the form originally proposed by Rice and Walsh in the late 1950's. Additive measures of cold and thermal pressure intrinsic to the Mie-Gruneisen EOS framework is replaced by isobaric additive functions of the cold and thermal specific volume components in the enthalpy-based formulation. Additionally, experimental evidence reveals enhancement of shock-induced phase transformation on the Hugoniot with increasing levels of initial distension for silicon dioxide, uranium dioxide and possibly boron carbide. Methods for addressing this experimentally observed feature of the shock compression are incorporated into the EOS model.

Equation of State for Shock Compression of High Distension Solids

NASA Astrophysics Data System (ADS)

Grady, Dennis

2013-06-01

Shock Hugoniot data for full-density and porous compounds of boron carbide, silicon dioxide, tantalum pentoxide, uranium dioxide and playa alluvium are investigated for the purpose of equation-of-state representation of intense shock compression. Complications of multivalued Hugoniot behavior characteristic of highly distended solids are addressed through the application of enthalpy-based equations of state of the form originally proposed by Rice and Walsh in the late 1950's. Additivity of cold and thermal pressure intrinsic to the Mie-Gruneisen EOS framework is replaced by isobaric additive functions of the cold and thermal specific volume components in the enthalpy-based formulation. Additionally, experimental evidence supports acceleration of shock-induced phase transformation on the Hugoniot with increasing levels of initial distention for silicon dioxide, uranium dioxide and possibly boron carbide. Methods for addressing this experimentally observed facet of the shock compression are introduced into the EOS model.

Electrosprayed Heavy Ion and Nanodrop Beams for Surface Engineering and Electrical Propulsion

DTIC Science & Technology

2014-09-10

arsenide, gallium antimonide, gallium nitride and silicon carbide ; studied the role of the liquid’s composition on the sputtering of silicon ; study...being a material closely related to silicon . The maximum roughness for GaN, GaAs, GaSb, InP, InAs, Ge and SiC are 12.7, 11.7, 19.5, 8.1, 7.9, 17.5...poly crystalline silicon carbide and boron car- bide, respectively. The associated sputtering rates of 448, 172, and 170 nm/min far exceed the

Using Plasticity Values Determined from Systematic Hardness Indentation Measurements for Predicting Impact Behavior in Structural Ceramics: A New, Simple Screening Technique

DTIC Science & Technology

2008-12-01

oxynitride (AlON), silicon carbide, aluminum oxide and boron carbide. A power-law equation (H = kFc ) is shown to fit the Knoop data quite well. A plot...20 22 24 26 0 20 40 60 80 100 120 140 a/F + b kFc HK= 24.183 F-0.0699 R2= 0.97 H K (G Pa ) Load (N) HK = a/F + b ErrorValue 0.919483.7367a

Micromechanical analysis of a hybrid composite—effect of boron carbide particles on the elastic properties of basalt fiber reinforced polymer composite

NASA Astrophysics Data System (ADS)

Krishna Golla, Sai; Prasanthi, P.

2016-11-01

A fiber reinforced polymer (FRP) composite is an important material for structural application. The diversified application of FRP composites has become the center of attention for interdisciplinary research. However, improvements in the mechanical properties of this class of materials are still under research for different applications. The reinforcement of inorganic particles in a composite improves its structural properties due to their high stiffness. The present research work is focused on the prediction of the mechanical properties of the hybrid composites where continuous fibers are reinforced in a micro boron carbide particle mixed polypropylene matrix. The effectiveness of the addition of 30 wt. % of boron carbide (B4C) particle contributions regarding the longitudinal and transverse properties of the basalt fiber reinforced polymer composite at various fiber volume fractions is examined by finite element analysis (FEA). The experimental approach is the best way to determine the properties of the composite but it is expensive and time-consuming. Therefore, the finite element method (FEM) and analytical methods are the viable methods for the determination of the composite properties. The FEM results were obtained by adopting a micromechanics approach with the support of FEM. Assuming a uniform distribution of reinforcement and considering one unit-cell of the whole array, the properties of the composite materials are determined. The predicted elastic properties from FEA are compared with the analytical results. The results suggest that B4C particles are a good reinforcement for the enhancement of the transverse properties of basalt fiber reinforced polypropylene.

Boron-Filled Hybrid Carbon Nanotubes

PubMed Central

Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

2016-01-01

A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

The relation of the yield stress of high-pressure anvils to the pressure attained at yielding and the ultimate attainable pressure

NASA Technical Reports Server (NTRS)

Panda, P. C.; Ruoff, A. L.

1979-01-01

A sensitive microprofilometer was used to determine the onset of yielding in the anvils of a supported opposed anvil device for the case of 3% cobalt-cemented tungsten carbide as the anvil material. In addition, it is shown how the commencement of yielding in boron carbide pistons, the yield strength being known, can be used to obtain the transition pressure to a conducting phase in gallium phosphide. The transition pressures of bismuth and gallium phosphide are obtained and it is found that these transitions are extremely close to the maximum attainable pressure in, respectively, a maraging steel and a 3% cobalt-cemented tungsten carbide.

High-Nitrogen-Based Pyrotechnics: Longer- and Brighter-Burning, Perchlorate-Free, Red-Light Illuminants for Military and Civilian Applications

DTIC Science & Technology

2011-01-01

combustion of these materials. To address the aforementioned perchlorate issues, an effort was initiated by ARDEC to remove potassium per- chlorate ...with acceptable burn times for pyrotechnic applications by using potassium nitrate– amorphous boron–crystalline boron/boron carbide–epoxy binder mixtures...3,4] Moreover, it was discovered by ARDEC that a potassium nitrate–boron carbide–epoxy binder mix- ture alone was able to generate suitable green

The boron-tailing myth in hydrogenated amorphous silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stuckelberger, M., E-mail: michael.stuckelberger@alumni.ethz.ch; Bugnon, G.; Despeisse, M.

The boron-tailing effect in hydrogenated amorphous silicon (a-Si:H) solar cells describes the reduced charge collection specifically in the blue part of the spectrum for absorber layers deposited above a critical temperature. This effect limits the device performance of state-of-the art solar cells: For enhanced current density (reduced bandgap), the deposition temperature should be as high as possible, but boron tailing gets detrimental above 200 °C. To investigate this limitation and to show potential paths to overcome it, we deposited high-efficiency a-Si:H solar cells, varying the deposition temperatures of the p-type and the intrinsic absorber (i) layers between 150 and 250 °C. Usingmore » secondary ion mass spectroscopy, we study dedicated stacks of i-p-i layers deposited at different temperatures. This allows us to track boron diffusion at the p-i and i-p interfaces as they occur in the p-i-n and n-i-p configurations of a-Si:H solar cells for different deposition conditions. Finally, we prove step-by-step that the common explanation for boron tailing—boron diffusion from the p layer into the i layer leading to enhanced recombination—is not generally true and propose an alternative explanation for the experimentally observed drop in the external quantum efficiency at short wavelengths.« less

Iron-based amorphous alloys and methods of synthesizing iron-based amorphous alloys

DOEpatents

Saw, Cheng Kiong; Bauer, William A.; Choi, Jor-Shan; Day, Dan; Farmer, Joseph C.

2016-05-03

A method according to one embodiment includes combining an amorphous iron-based alloy and at least one metal selected from a group consisting of molybdenum, chromium, tungsten, boron, gadolinium, nickel phosphorous, yttrium, and alloys thereof to form a mixture, wherein the at least one metal is present in the mixture from about 5 atomic percent (at %) to about 55 at %; and ball milling the mixture at least until an amorphous alloy of the iron-based alloy and the at least one metal is formed. Several amorphous iron-based metal alloys are also presented, including corrosion-resistant amorphous iron-based metal alloys and radiation-shielding amorphous iron-based metal alloys.

Thin Refractory Films on Fused Silica Crucibles

DTIC Science & Technology

1988-07-01

9 4.1.4 Iridium 11 4.1.5 Boron Nitride (BN) 11 4.2 Adherence Testing 13 4.3 Metallography 13 5.0 Conclusions and Recommendations 16 Accession For...Chamber 4 2. Schematic of Crucible Coating Apparatus (SiC, NbN, and TiB 2) 6 3. Schematic of CVD Apparatus for Iridium 7 4. Schematic of Apparatus for...ultrahigh-purity coatings of silicon carbide (SiC), niobium nitride (NbN), titanium diboride (TiB2), iridium , and boron nitride (BN) onto the interior

Tribological properties of amorphous alloys and the role of surfaces in abrasive wear of materials

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1982-01-01

The research approach undertaken by the authors relative to the subject, and examples of results from the authors are reviewed. The studies include programs in adhesion, friction, and various wear mechanisms (adhesive and abrasive wear). The materials which have been studied include such ceramic and metallic materials as silicon carbide, ferrites, diamond, and amorphous alloys.

Synthesis and high temperature stability of amorphous Si(B)CN-MWCNT composite nanowires

NASA Astrophysics Data System (ADS)

Bhandavat, Romil; Singh, Gurpreet

2012-02-01

We demonstrate synthesis of a hybrid nanowire structure consisting of an amorphous polymer-derived silicon boron-carbonitride (Si-B-C-N) shell with a multiwalled carbon nanotube core. This was achieved through a novel process involving preparation of a boron-modified liquid polymeric precursor through a reaction of trimethyl borate and polyureasilazane under atmospheric conditions; followed by conversion of polymer to glass-ceramic on carbon nanotube surfaces through controlled heating. Chemical structure of the polymer was studied by liquid-NMR while evolution of various ceramic phases was studied by Raman spectroscopy, solid-NMR, Fourier transform infrared and X-ray photoelectron spectroscopy. Electron microscopy and X-ray diffraction confirms presence of amorphous Si(B)CN coating on individual nanotubes for all specimen processed below 1400 degree C. Thermogravimetric analysis, followed by TEM revealed high temperature stability of the carbon nanotube core in flowing air up to 1300 degree C.

Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon

NASA Astrophysics Data System (ADS)

Liang, J. H.; Wang, S. C.

2007-08-01

The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 × 1014 cm-2 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 °C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is evident in the LT specimen while just the opposite is true in the as-implanted RT one. The as-annealed results illustrated that the extension of the boron depth profile into the bulk via transient-enhanced diffusion (TED) in the LT specimen is less than it is in the RT one. Only residual defects are visible in the LT specimen while two clear bands of dislocation loops appear in the RT one.

Diamond-silicon carbide composite and method

DOEpatents

Zhao, Yusheng [Los Alamos, NM

2011-06-14

Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn; State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000; Zhang, Yanmin

2013-11-14

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructuremore » after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.« less

Compensated amorphous silicon solar cell

DOEpatents

Devaud, Genevieve

1983-01-01

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Mechanical intermixing of components in (CoMoNi)-based systems and the formation of (CoMoNi)/WC nanocomposite layers on Ti sheets under ball collisions

NASA Astrophysics Data System (ADS)

Romankov, S.; Park, Y. C.; Shchetinin, I. V.

2017-11-01

Cobalt (Co), molybdenum (Mo), and nickel (Ni) components were simultaneously introduced onto titanium (Ti) surfaces from a composed target using ball collisions. Tungsten carbide (WC) balls were selected for processing as the source of a cemented carbide reinforcement phase. During processing, ball collisions continuously introduced components from the target and the grinding media onto the Ti surface and induced mechanical intermixing of the elements, resulting in formation of a complex nanocomposite structure onto the Ti surface. The as-fabricated microstructure consisted of uniformly dispersed WC particles embedded within an integrated metallic matrix composed of an amorphous phase with nanocrystalline grains. The phase composition of the alloyed layers, atomic reactions, and the matrix grain sizes depended on the combination of components introduced onto the Ti surface during milling. The as-fabricated layer exhibited a very high hardness compared to industrial metallic alloys and tool steel materials. This approach could be used for the manufacture of both cemented carbides and amorphous matrix composite layers.

Highly tunable electronic properties in plasma-synthesized B-doped microcrystalline-to-amorphous silicon nanostructure for solar cell applications

NASA Astrophysics Data System (ADS)

Lim, J. W. M.; Ong, J. G. D.; Guo, Y.; Bazaka, K.; Levchenko, I.; Xu, S.

2017-10-01

Highly controllable electronic properties (carrier mobility and conductivity) were obtained in the sophisticatedly devised, structure-controlled, boron-doped microcrystalline silicon structure. Variation of plasma parameters enabled fabrication of films with the structure ranging from a highly crystalline (89.8%) to semi-amorphous (45.4%) phase. Application of the innovative process based on custom-designed, optimized, remote inductively coupled plasma implied all advantages of the plasma-driven technique and simultaneously avoided plasma-intrinsic disadvantages associated with ion bombardment and overheating. The high degree of SiH4, H2 and B2H6 precursor dissociation ensured very high boron incorporation into the structure, thus causing intense carrier scattering. Moreover, the microcrystalline-to-amorphous phase transition triggered by the heavy incorporation of the boron dopant with increasing B2H6 flow was revealed, thus demonstrating a very high level of the structural control intrinsic to the process. Control over the electronic properties through variation of impurity incorporation enabled tailoring the carrier concentrations over two orders of magnitude (1018-1020 cm-3). These results could contribute to boosting the properties of solar cells by paving the way to a cheap and efficient industry-oriented technique, guaranteeing a new application niche for this new generation of nanomaterials.

Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

PubMed Central

Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

2016-01-01

Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

Analysis of boron carbides' electronic structure

NASA Technical Reports Server (NTRS)

Howard, Iris A.; Beckel, Charles L.

1986-01-01

The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-04-02

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Applications in the Nuclear Industry for Thermal Spray Amorphous Metal and Ceramic Coatings

NASA Astrophysics Data System (ADS)

Blink, J.; Farmer, J.; Choi, J.; Saw, C.

2009-06-01

Amorphous metal and ceramic thermal spray coatings have been developed with excellent corrosion resistance and neutron absorption. These coatings, with further development, could be cost-effective options to enhance the corrosion resistance of drip shields and waste packages, and limit nuclear criticality in canisters for the transportation, aging, and disposal of spent nuclear fuel. Iron-based amorphous metal formulations with chromium, molybdenum, and tungsten have shown the corrosion resistance believed to be necessary for such applications. Rare earth additions enable very low critical cooling rates to be achieved. The boron content of these materials and their stability at high neutron doses enable them to serve as high efficiency neutron absorbers for criticality control. Ceramic coatings may provide even greater corrosion resistance for waste package and drip shield applications, although the boron-containing amorphous metals are still favored for criticality control applications. These amorphous metal and ceramic materials have been produced as gas-atomized powders and applied as near full density, nonporous coatings with the high-velocity oxy-fuel process. This article summarizes the performance of these coatings as corrosion-resistant barriers and as neutron absorbers. This article also presents a simple cost model to quantify the economic benefits possible with these new materials.

Pyrotechnic Smoke Compositions Containing Boron Carbide

DTIC Science & Technology

2012-06-10

resulting smoke. The inhalation of zinc fumes is known to cause “metal fume fever” and the smoke also contains various chlorinated organic compounds...matches were used to ignite the slurried items. Bare pellets were ignited with electrically heated nickel- chromium wire (hot wire). Small HC smoke

Combustion of Na 2B 4O 7 + Mg + C to synthesis B 4C powders

NASA Astrophysics Data System (ADS)

Guojian, Jiang; Jiayue, Xu; Hanrui, Zhuang; Wenlan, Li

2009-09-01

Boron carbide powder was fabricated by combustion synthesis (CS) method directly from mixed powders of borax (Na 2B 4O 7), magnesium (Mg) and carbon. The adiabatic temperature of the combustion reaction of Na 2B 4O 7 + 6 Mg + C was calculated. The control of the reactions was achieved by selecting reactant composition, relative density of powder compact and gas pressure in CS reactor. The effects of these different influential factors on the composition and morphologies of combustion products were investigated. The results show that, it is advantageous for more Mg/Na 2B 4O 7 than stoichiometric ratio in Na 2B 4O 7 + Mg + C system and high atmosphere pressure in the CS reactor to increase the conversion degree of reactants to end product. The final product with the minimal impurities' content could be fabricated at appropriate relative density of powder compact. At last, boron carbide without impurities could be obtained after the acid enrichment and distilled water washing.

The effect of hydrogen on B4C coatings fabrication in inductively coupled plasma torch

NASA Astrophysics Data System (ADS)

Guo, Q. J.; Zhao, P.; Li, L.; Zhou, Q. J.; Ni, G. H.; Meng, Y. D.

2018-02-01

Boron carbide (B4C) coatings are prepared by an RF inductively coupled plasma (ICP) torch with different amounts of hydrogen introduced into the sheath gas. The effects of the added hydrogen on the characteristics of the plasma are diagnosed by optical emission spectroscopy and high speed photography. The effects on the melting of B4C particles in the plasma are studied by scanning electron microscopy (SEM). The microstructure of the B4C coatings was determined with SEM imaging and x-ray diffraction analysis. The results show that adding hydrogen to the sheath gas leads to plasma contraction, which results in higher gas temperature of plasma. It also enhances B4C particles spheroidizing and improves the compactness of B4C coatings. Plasma processing does not change the main phase of boron carbide. The obtained results on B4C coatings on Cu substrates allows for improving the B4C coatings fabrication process.

The improvement of wave-absorbing ability of silicon carbide fibers by depositing boron nitride coating

NASA Astrophysics Data System (ADS)

Ye, Fang; Zhang, Litong; Yin, Xiaowei; Liu, Yongsheng; Cheng, Laifei

2013-04-01

This work investigated electromagnetic wave (EMW) absorption and mechanical properties of silicon carbide (SiC) fibers with and without boron nitride (BN) coating by chemical vapor infiltration (CVI). The dielectric property and EM shielding effectiveness of SiC fiber bundles before and after being coated by BN were measured by wave guide method. The EM reflection coefficient of SiC fiber laminates with and without BN coating was determined by model calculation and NRL-arc method, respectively. Tensile properties of SiC fiber bundles with and without BN coating were tested at room temperature. Results show that SiC fibers with BN coating had a great improvement of EMW absorbing property because the composites achieved the impedance matching. BN with the low permittivity and dielectric loss contributed to the enhancive introduction and reduced reflection of EMW. The tensile strength and Weibull modulus of SiC fiber bundles coated by BN increased owing to the decrease of defects in SiC fibers and the protection of coating during loading.

Defect Facilitated Phonon Transport through Kinks in Boron Carbide Nanowires

DOE PAGES

Zhang, Qian; Cui, Zhiguang; Wei, Zhiyong; ...

2017-05-08

Nanowires of complex morphologies, such as kinked wires, have been recently synthesized and demonstrated for novel devices and applications. However, the effects of these morphologies on thermal transport have not been well studied. Through systematic experimental measurements, we show in this paper that single-crystalline, defect-free kinks in boron carbide nanowires can pose a thermal resistance up to ~30 times larger than that of a straight wire segment of equivalent length. Analysis suggests that this pronounced resistance can be attributed to the combined effects of backscattering of highly focused phonons and required mode conversion at the kink. Interestingly, it is alsomore » found that instead of posing resistance, structural defects in the kink can actually assist phonon transport through the kink and reduce its resistance. Finally, given the common kink-like wire morphology in nanoelectronic devices and required low thermal conductivity for thermoelectric devices, these findings have important implications in precise thermal management of electronic devices and thermoelectrics.« less

Defect Facilitated Phonon Transport through Kinks in Boron Carbide Nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Qian; Cui, Zhiguang; Wei, Zhiyong

Nanowires of complex morphologies, such as kinked wires, have been recently synthesized and demonstrated for novel devices and applications. However, the effects of these morphologies on thermal transport have not been well studied. Through systematic experimental measurements, we show in this paper that single-crystalline, defect-free kinks in boron carbide nanowires can pose a thermal resistance up to ~30 times larger than that of a straight wire segment of equivalent length. Analysis suggests that this pronounced resistance can be attributed to the combined effects of backscattering of highly focused phonons and required mode conversion at the kink. Interestingly, it is alsomore » found that instead of posing resistance, structural defects in the kink can actually assist phonon transport through the kink and reduce its resistance. Finally, given the common kink-like wire morphology in nanoelectronic devices and required low thermal conductivity for thermoelectric devices, these findings have important implications in precise thermal management of electronic devices and thermoelectrics.« less

The Effects of Stoichiometry on the Mechanical Properties of Icosahedral Boron Carbide Under Loading

DTIC Science & Technology

2012-11-19

ranging from 10% to 20% C using glancing incidence x - ray diffraction and similar experimental studies of structure as a function of stoichiometry were...blue) positions. it has been suggested that x - ray diffraction analysis of a series of boron-rich materials indicates a distinct change in the c lattice...Angstroms, angles in degrees, volume in cubic Angstroms). Structure Formula % C a b c α β γ Volume Experiment37 B5.6C 15.2 5.19 5.19 5.19 65.18 65.18

High thermal conductivity materials for thermal management applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Broido, David A.; Reinecke, Thomas L.; Lindsay, Lucas R.

High thermal conductivity materials and methods of their use for thermal management applications are provided. In some embodiments, a device comprises a heat generating unit (304) and a thermally conductive unit (306, 308, 310) in thermal communication with the heat generating unit (304) for conducting heat generated by the heat generating unit (304) away from the heat generating unit (304), the thermally conductive unit (306, 308, 310) comprising a thermally conductive compound, alloy or composite thereof. The thermally conductive compound may include Boron Arsenide, Boron Antimonide, Germanium Carbide and Beryllium Selenide.

Microstructures of the silicon carbide nanowires obtained by annealing the mechanically-alloyed amorphous powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Pengfei, E-mail: zhangpengfei1984@163.com; Li, Xinli

2015-07-15

Silicon, graphite and boron nitride powders were mechanically alloyed for 40 h in argon. The as-milled powders were annealed at 1700 °C in nitrogen for 30 min. The annealed powders are covered by a thick layer of gray–green SiC nanowires, which are 300 nm to 1000 nm in diameter and several hundred microns in length. Trace iron in the raw powders acts as a catalyst, promoting the V–L–S process. It follows that the actual substances contributing to the growth of the SiC nanowires may be silicon, graphite and the metal impurities in the raw powders. The results from HRTEM andmore » XRD reveal that the products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. It is interestingly found that 6H–SiC coexists with 3C–SiC in one nodular nanowire. This novel structure may introduce periodic potential field along the longitudinal direction of the nanowires, and may find applications in the highly integrated optoelectronic devices. - Graphical abstract: Display Omitted - Highlights: • SiC nanowires were prepared by annealing the mechanically alloyed amorphous powders. • SiC nanowires are 300 nm to 1000 nm in diameter and several hundred microns in length. • The products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. • Trace Fe in the raw powders acts as a catalyst, promoting the V–L–S process. • 6H–SiC coexists with 3C–SiC in one nodular SiC nanowire.« less

Boronization and Carburization of Superplastic Stainless Steel and Titanium-Based Alloys

PubMed Central

Matsushita, Masafumi

2011-01-01

Bronization and carburization of fine-grain superplastic stainless steel is reviewed, and new experimental results for fine grain Ti88.5Al4.5V3Fe2Mo2 are reported. In superplastic duplex stainless steel, the diffusion of carbon and boron is faster than in non-superplastic duplex stainless steel. Further, diffusion is activated by uniaxial compressive stress. Moreover, non-superplastic duplex stainless steel shows typical grain boundary diffusion; however, inner grain diffusion is confirmed in superplastic stainless steel. The presence of Fe and Cr carbides or borides is confirmed by X-ray diffraction, which indicates that the diffused carbon and boron react with the Fe and Cr in superplastic stainless steel. The Vickers hardness of the carburized and boronized layers is similar to that achieved with other surface treatments such as electro-deposition. Diffusion of boron into the superplastic Ti88.5Al4.5V3Fe2Mo2 alloy was investigated. The hardness of the surface exposed to boron powder can be increased by annealing above the superplastic temperature. However, the Vickers hardness is lower than that of Ti boride. PMID:28824144

Molecular dynamics simulations of hydrogen bombardment of tungsten carbide surfaces

NASA Astrophysics Data System (ADS)

Träskelin, P.; Juslin, N.; Erhart, P.; Nordlund, K.

2007-05-01

The interaction between energetic hydrogen and tungsten carbide (WC) is of interest both due to the use of hydrogen-containing plasmas in thin-film manufacturing and due to the presence of WC in the divertor of fusion reactors. In order to study this interaction, we have carried out molecular dynamics simulations of the low-energy bombardment of deuterium impinging onto crystalline as well as amorphous WC surfaces. We find that prolonged bombardment leads to the formation of an amorphous WC surface layer, regardless of the initial structure of the WC sample. Loosely bound hydrocarbons, which can erode by swift chemical sputtering, are formed at the surface. Carbon-terminated surfaces show larger sputtering yields than tungsten-terminated surfaces. In both cumulative and noncumulative simulations, C is seen to sputter preferentially. Implications for mixed material erosion in ITER are discussed.

Compression and Associated Properties of Boron Carbide

DTIC Science & Technology

2008-12-01

of Brookhaven National Laboratory ( BNL ) with the light extracted from the x-ray source in a method previously described (Liu et al., 2002).. A...are sharper and more intense relative to as received material. ACKNOWLEDGMENTS Thanks are due to Dr. Jingzhu Hu and Dr. Zhenxian Liu of BNL

Amorphous titania modified with boric acid for selective capture of glycoproteins.

PubMed

Jin, Shanxia; Liu, Liping; Zhou, Ping

2018-05-22

Amorphous titania was modified with boric acid, and the resulting material was characterized by scanning electron microscopy, Fourier transform infrared spectroscopy, X-ray powder diffraction and X-ray photoelectron spectrometry. The new material, in contrast to conventional boronate affinity materials containing boronic acid ligands, bears boric acid groups. It is shown to exhibit high specificity for glycoproteins, and this was applied to design a method for solid phase extraction of glycoproteins as shown for ribonuclease B, horse radish peroxidase and ovalbumin. Glycoproteins were captured under slightly alkaline environment and released in acidic solutions. The glycoproteins extracted were detected by matrix-assisted laser desorption/ionization time-of-flight mass spectrometry. The binding capacities for ribonuclease B, horse radish peroxidase and ovalbumin typically are 9.3, 26.0 and 53.0 mg ∙ g -1 , respectively. The method was successfully applied to the selective enrichment of ovalbumin from egg white. Graphical abstract Schematic presentation of the capture of glycoproteins by amorphous titania modified with boric acid.

Properties of vacuum-evaporated boron films

NASA Technical Reports Server (NTRS)

Feakes, F.

1973-01-01

The work on the properties of thin boron films made by vacuum evaporation of elemental boron using an electron beam as the energy source is reported. The program aimed at characterizing the properties of vacuum evaporated films. The work was directed toward those variables considered to be important in affecting the tensile strength of the boron films. In general, the thickness of the films was less than 0.002 in. The temperature of the substrate on which the boron was condensed was found to be most important. Three distinctly different forms of boron deposit were produced. Although the transition temperature was not sharply defined, at substrate temperatures of less than approximately 600 deg C the boron deposits were amorphous to X-ray. If the substrate were highly polished, the deposits were black and mirror-like. For substrates with coefficients of thermal expansion close to that of boron, the deposits were then continuous and uncracked. The studies suggest that the potential continues to exist for film-type composites to have both high strength and high modulus.

Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

Infrared absorption spectra of metal carbides, nitrides and sulfides

NASA Technical Reports Server (NTRS)

Kammori, O.; Sato, K.; Kurosawa, F.

1981-01-01

The infrared absorption spectra of 12 kinds of metal carbides, 11 kinds of nitrides, and 7 kinds of sulfides, a total of 30 materials, were measured and the application of the infrared spectra of these materials to analytical chemistry was discussed. The measurements were done in the frequency (wave length) range of (1400 to 400/cm (7 to 25 mu). The carbides Al4C3, B4C, the nitrides AlN, BN, Si3N4, WB, and the sulfides Al2S3, FeS2, MnS, NiS and PbS were noted to have specific absorptions in the measured region. The sensitivity of Boron nitride was especially good and could be detected at 2 to 3 micrograms in 300 mg of potassium bromide.

Materials Coating Techniques

DTIC Science & Technology

1980-03-01

applications from decorative to utilitarian over significant segments of the engineering, chemical, nuclear , microelectronics, and related Industries. PVD...Thermal-control coating. Boron 2430 Cermet component, nuclear shielding and controlrod material; Carbide wear- and temperature-resistant. Calcium...Zirconium Oxide (Hafnia-Pree � Thermal-barrier coatings for nuclear applications. Lime Stabi!Aed) Zirconium 2563 Resistant to high-temperature

Improving Electrode Durability of PEF Chamber by selecting suitable material

USDA-ARS?s Scientific Manuscript database

Corrosion resistance of four materials - titanium, platinized titanium, stainless steel, and boron carbide - as electrodes in a Pulsed Electric Field (PEF) system was studied to reduce electrode material migration into the food by electrode corrosion. The PEF process conditions were 28 kV/cm field s...

Processing development of 4 tantalum carbide-hafnium carbide and related carbides and borides for extreme environments

NASA Astrophysics Data System (ADS)

Gaballa, Osama Gaballa Bahig

Carbides, nitrides, and borides ceramics are of interest for many applications because of their high melting temperatures and good mechanical properties. Wear-resistant coatings are among the most important applications for these materials. Materials with high wear resistance and high melting temperatures have the potential to produce coatings that resist degradation when subjected to high temperatures and high contact stresses. Among the carbides, Al4SiC4 is a low density (3.03 g/cm3), high melting temperature (>2000°C) compound, characterized by superior oxidation resistance, and high compressive strength. These desirable properties motivated this investigation to (1) obtain high-density Al4SiC4 at lower sintering temperatures by hot pressing, and (2) to enhance its mechanical properties by adding WC and TiC to the Al4SiC4. Also among the carbides, tantalum carbide and hafnium carbide have outstanding hardness; high melting points (3880°C and 3890°C respectively); good resistance to chemical attack, thermal shock, and oxidation; and excellent electronic conductivity. Tantalum hafnium carbide (Ta4HfC 5) is a 4-to-1 ratio of TaC to HfC with an extremely high melting point of 4215 K (3942°C), which is the highest melting point of all currently known compounds. Due to the properties of these carbides, they are considered candidates for extremely high-temperature applications such as rocket nozzles and scramjet components, where the operating temperatures can exceed 3000°C. Sintering bulk components comprised of these carbides is difficult, since sintering typically occurs above 50% of the melting point. Thus, Ta4 HfC5 is difficult to sinter in conventional furnaces or hot presses; furnaces designed for very high temperatures are expensive to purchase and operate. Our research attempted to sinter Ta4HfC5 in a hot press at relatively low temperature by reducing powder particle size and optimizing the powder-handling atmosphere, milling conditions, sintering temperature, and hot-pressing pressure. Also, WC additions to Ta4HfC5 were found to improve densification and increase microhardness. The ability to process these materials at relatively low temperature would save energy and reduce cost. Boron-based hard materials are used in numerous applications such as industrial machining, armor plating, and wear-resistant coatings. It was often thought that in addition to strong bonding, super-hard materials must also possess simple crystallographic unit cells with high symmetry and a minimum number of crystal defects (e.g., diamond and cubic boron nitride (cBN)). However, one ternary boride, AlMgB14, deviates from this paradigm; AlMgB 14 has a large, orthorhombic unit cell (oI64) with multiple icosahedral boron units. TiB2 has been shown to be an effective reinforcing phase in AlMgB 14, raising hardness, wear resistance, and corrosion resistance. Thus, it was thought that adding other, similar phases (i.e., ZrB2 and HfB2) to AlMgB14 could lead to useful improvements in properties vis-à-vis pure AlMgB14. Group IV metal diborides (XB2, where X = Ti, Zr, or Hf) are hard, ultra-high temperature ceramics. These compounds have a primitive hexagonal crystal structure (hP3) with planes of graphite-like boride rings above and below planes of metal atoms. Unlike graphite, there is strong bonding between the planes, resulting in high hardness. For this study two-phase composites of 60 vol. % metal diborides with 40 vol. % AlMgB14 were produced and characterized.

Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mandal, Krishna

High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3He will be very desirable. Tomore » address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron ( 10B) and enriched lithium ( 6Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (t g ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10 -24 cm 2), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.« less

Tribochemistry of contact interfaces of nanocrystalline molybdenum carbide films

NASA Astrophysics Data System (ADS)

Kumar, D. Dinesh; Kumar, N.; Panda, Kalpataru; Kamalan Kirubaharan, A. M.; Kuppusami, P.

2018-07-01

Transition metal carbides (TMC) are known for their improved tribological properties and are sensitive to the tribo-atmospheric environment. Nanocrystalline molybdenum carbide (MoC) thin films were deposited by DC magnetron sputtering technique using reactive CH4 gas. The friction and wear resistance properties of MoC thin films were significantly improved in humid-atmospheric condition as compared to high-vacuum tribo-condition. A comprehensive chemical analysis of deformed contact interfaces was carried out by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX) and Raman spectroscopy. XPS and Raman spectroscopy showed the formation of stable molybdenum-oxide (MoO), molybdenum carbide (MoC) and amorphous carbon (a-C) tribo-phases. Moreover, during the sliding in humid-atmospheric condition, these phases were extensively deposited on the sliding steel ball counter body which significantly protected against undesirable friction and wear.

Recent developments in turning hardened steels - A review

NASA Astrophysics Data System (ADS)

Sivaraman, V.; Prakash, S.

2017-05-01

Hard materials ranging from HRC 45 - 68 such as hardened AISI H13, AISI 4340, AISI 52100, D2 STL, D3 STEEL Steel etc., need super hard tool materials to machine. Turning of these hard materials is termed as hard turning. Hard turning makes possible direct machining of the hard materials and also eliminates the lubricant requirement and thus favoring dry machining. Hard turning is a finish turning process and hence conventional grinding is not required. Development of the new advanced super hard tool materials such as ceramic inserts, Cubic Boron Nitride, Polycrystalline Cubic Boron Nitride etc. enabled the turning of these materials. PVD and CVD methods of coating have made easier the production of single and multi layered coated tool inserts. Coatings of TiN, TiAlN, TiC, Al2O3, AlCrN over cemented carbide inserts has lead to the machining of difficult to machine materials. Advancement in the process of hard machining paved way for better surface finish, long tool life, reduced tool wear, cutting force and cutting temperatures. Micro and Nano coated carbide inserts, nanocomposite coated PCBN inserts, micro and nano CBN coated carbide inserts and similar developments have made machining of hardened steels much easier and economical. In this paper, broad literature review on turning of hardened steels including optimizing process parameters, cooling requirements, different tool materials etc., are done.

In situ TEM study of electron-beam radiation induced boron diffusion and effects on phase and microstructure evolution in nanostructured CoFeB/SiO2 thin film

NASA Astrophysics Data System (ADS)

Liu, B. H.; Teo, H. W.; Mo, Z. H.; Mai, Z. H.; Lam, J.; Xue, J. M.; Zhao, Y. Z.; Tan, P. K.

2017-01-01

Using in situ transmission electron microscopy (TEM), we studied boron diffusion and segregation in CoFeB/SiO2 nanostructured thin film stacks. We also investigated how these phenomena affected the phase and microstructure of CoFeB thin films under electron beam irradiation at 300 kV. A unique phase transformation was observed in CoFeB thin films under high-dose electron irradiation, from a polycrystalline Co3Fe to a unilateral amorphous phase of Co3Fe and nanocrystalline FexCo23-xB6. The unilateral amorphization of the Co3Fe film showed an electron-dose-rate sensitivity with a threshold dose rate. Detailed in situ TEM studies revealed that the unilateral amorphization of the Co3Fe film arose from boron segregation at the bottom of the Co3Fe thin film induced by radiation-enhanced diffusion of boron atoms that were displaced by electron knock-on effects. The radiation-induced nanocrystallization of FexCo23-xB6 was also found to be dose-rate sensitive with a higher electron beam current leading to earlier nucleation and more rapid grain growth. The nanocrystallization of FexCo23-xB6 occurred preferentially at the CoFeB/SiO2 interface. Kinetic studies by in situ TEM revealed the surface crystallization and diffusion-controlled nucleation and grain growth mechanisms. The radiation-enhanced atomic diffusivity and high-concentration of radiation-induced point defects at the Co3Fe/SiO2 interface enhanced the local short-range ordering of Fe, Co, and B atoms, favoring nucleation and grain growth of FexCo23-xB6 at the interface.

Elasticity, strength, and toughness of single crystal silicon carbide, ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon

NASA Astrophysics Data System (ADS)

Espinosa, H. D.; Peng, B.; Moldovan, N.; Friedmann, T. A.; Xiao, X.; Mancini, D. C.; Auciello, O.; Carlisle, J.; Zorman, C. A.; Merhegany, M.

2006-08-01

In this work, the authors report the mechanical properties of three emerging materials in thin film form: single crystal silicon carbide (3C-SiC), ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon. The materials are being employed in micro- and nanoelectromechanical systems. Several reports addressed some of the mechanical properties of these materials but they are based in different experimental approaches. Here, they use a single testing method, the membrane deflection experiment, to compare these materials' Young's moduli, characteristic strengths, fracture toughnesses, and theoretical strengths. Furthermore, they analyze the applicability of Weibull theory [Proc. Royal Swedish Inst. Eng. Res. 153, 1 (1939); ASME J. Appl. Mech. 18, 293 (1951)] in the prediction of these materials' failure and document the volume- or surface-initiated failure modes by fractographic analysis. The findings are of particular relevance to the selection of micro- and nanoelectromechanical systems materials for various applications of interest.

Investigations on the system boron-carbon silicon

NASA Technical Reports Server (NTRS)

Kieffer, R.; Gugel, E.; Leimer, G.; Ettmayer, P.

1983-01-01

The above elements form with each other binary compounds which are very interesting from the point of view of their structure and their chemistry and which are important for technology. The present investigation is concerned with the three-component system and the behavior of the binary compounds occurring in it. Investigations employing various techniques, such as X-ray, chemical analysis, microscopy and fusion experiments showed that no ternary phase exists within the boundary of the ternary system. There is no compound with a higher abrasion capacity than boron carbide. The probable phase field divisions at two isothermic intersections and the fusion isotherms are indicated.

Functionally gradient hard carbon composites for improved adhesion and wear

NASA Astrophysics Data System (ADS)

Narayan, Roger Jagdish

A new approach is proposed for fabricating biomedical devices that last longer and are more biocompatible than those presently available. In this approach, a bulk material is chosen that has desirable mechanical properties (low modulus, high strength, high ductility and high fatigue strength). This material is coated with corrosion-resistant, wear-resistant, hard, and biocompatible hard carbon films. One of the many forms of carbon, tetrahedral amorphous carbon, consists mainly of sp3-bonded atoms. Tetrahedral amorphous carbon possesses properties close to diamond in terms of hardness, atomic smoothness, and inertness. Tetrahedral amorphous carbon and diamond films usually contain large amounts of compressive and sometimes tensile stresses; adhesive failure from these stresses has limited widespread use of these materials. This research involves processing, characterization and modeling of functionally gradient tetrahedral amorphous carbon and diamond composite films on metals (cobalt-chromium and titanium alloys) and polymers (polymethylmethacrylate and polyethylene) used in biomedical applications. Multilayer discontinuous thin films of titanium carbide, titanium nitride, aluminum nitride, and tungsten carbide have been developed to control stresses and graphitization in diamond films. A morphology of randomly interconnected micron sized diamond crystallites provides increased toughness and stress reduction. Internal stresses in tetrahedral amorphous carbon were reduced via incorporation of carbide forming elements (silicon and titanium) and noncarbide forming elements (copper, platinum, and silver). These materials were produced using a novel target design during pulsed laser deposition. These alloying atoms reduce hardness and sp3-bonded carbon content, but increase adhesion and wear resistance. Silver and platinum provide the films with antimicrobial properties, and silicon provides bioactivity and aids bone formation. Bilayer coatings were created that couple the adherence, biocompatibility, erosion resistance, and long term release of functional elements from hard carbon coatings with bioactive properties of nanocrystalline hydroxyapatite and short term drug release properties of resorbable poly (D,L) lactide-based materials. Finally, these hard carbon coatings have a variety of non-medical applications, including use in microelectronics packaging, sensors, flat panel displays, photodiodes, cutting tools, optical switches, and wear-resistant magnetic disks.

Hybridized boron-carbon nitride fibrous nanostructures on Ni substrates

NASA Astrophysics Data System (ADS)

Yap, Yoke Khin; Yoshimura, Masashi; Mori, Yusuke; Sasaki, Takatomo

2002-04-01

Stoichiometric BC2N films can be deposited on Si (100) at 800 °C, however, they are phase separated as pure carbon and BN phases. Likewise, hybridized boron-carbon nitride (BCN) films can be synthesized on Ni substrates. On Ni, the carbon and BN phases are hybridized through carbon nitride and boron carbide bonds. These films appeared as fibrous nanostructures. Evidence indicates that the Ni substrate acts as a sink for the carbon and forces the carbon composites to grow on top of the B and N atoms. However, as these films are grown thicker, phase separation occurs again. These results indicate that hybridized BCN phases should now be regarded as semiconducting or superhard nanostructures. High-temperature deposition on Ni substrates might be a solution to the obstacle of preparing hybridized BCN phases.

Effect of Doping on the Properties of Hydrogenated Amorphous Silicon Irradiated with Femtosecond Laser Pulses

NASA Astrophysics Data System (ADS)

Denisova, K. N.; Il'in, A. S.; Martyshov, M. N.; Vorontsov, A. S.

2018-04-01

A comparative analysis of the effect of femtosecond laser irradiation on the structure and conductivity of undoped and boron-doped hydrogenated amorphous silicon ( a-Si: H) is performed. It is demonstrated that the process of nanocrystal formation in the amorphous matrix under femtosecond laser irradiation is initiated at lower laser energy densities in undoped a-Si: H samples. The differences in conductivity between undoped and doped a-Si: H samples vanish almost completely after irradiation with an energy density of 150-160 mJ/cm2.

Microplasma Processed Ultrathin Boron Nitride Nanosheets for Polymer Nanocomposites with Enhanced Thermal Transport Performance.

PubMed

Zhang, Ri-Chao; Sun, Dan; Lu, Ai; Askari, Sadegh; Macias-Montero, Manuel; Joseph, Paul; Dixon, Dorian; Ostrikov, Kostya; Maguire, Paul; Mariotti, Davide

2016-06-01

This Research Article reports on the enhancement of the thermal transport properties of nanocomposite materials containing hexagonal boron nitride in poly(vinyl alcohol) through room-temperature atmospheric pressure direct-current microplasma processing. Results show that the microplasma treatment leads to exfoliation of the hexagonal boron nitride in isopropyl alcohol, reducing the number of stacks from >30 to a few or single layers. The thermal diffusivity of the resulting nanocomposites reaches 8.5 mm(2) s(-1), 50 times greater than blank poly(vinyl alcohol) and twice that of nanocomposites containing nonplasma treated boron nitride nanosheets. From TEM analysis, we observe much less aggregation of the nanosheets after plasma processing along with indications of an amorphous carbon interfacial layer, which may contribute to stable dispersion of boron nitride nanosheets in the resulting plasma treated colloids.

Fillers for improved graphite fiber retention by polymer matrix composites

NASA Technical Reports Server (NTRS)

House, E. E.; Sheppard, C. H.

1981-01-01

The results of a program designed to determine the extent to which elemental boron and boron containing fillers added to the matrix resin of graphite/epoxy composites prevent the release of graphite fibers when the composites are exposed to fire and impact conditions are described. The fillers evaluated were boron, boron carbide and aluminum boride. The conditions evaluated were laboratory simulations of those that could exist in the event of an aircraft crash and burn situation. The baseline (i.e., unfilled) laminates evaluated were prepared from commercially available graphite/epoxy. The baseline and filled laminates' mechanical properties, before and after isothermal and humidity aging, also were compared. It was found that a small amount of graphite fiber was released from the baseline graphite/epoxy laminates during the burn and impact conditions used in this program. However, the extent to which the fibers were released is not considered a severe enough problem to preclude the use of graphite reinforced composites in civil aircraft structure. It also was found that the addition of boron and boron containing fillers to the resin matrix eliminated this fiber release. Mechanical properties of laminates containing the boron and boron containing fillers were lower than those of the baseline laminates. These property degradations for two systems: boron (5 micron) at 2.5 percent filler loading, and boron (5 micron) at 5.0 percent filler loading do not appear severe enough to preclude their use in structural composite applications.

Super-hard cubic BN layer formation by nitrogen ion implantation

NASA Astrophysics Data System (ADS)

Komarov, F. F.; Pilko, V. V.; Yakushev, V. A.; Tishkov, V. S.

1994-11-01

Microcrystalline and amorphous boron thin films were implanted with nitrogen ions at energies from 25 to 125 keV and with doses from 2 × 10 17 to 1 × 10 18 at.cm 2 at temperatures below 200°C. The structure of boron nitride phases after ion implantation, formation of phases and phase transformations were investigated by TEM and TED methods. The cubic boron nitride phase is revealed. The microhardness of the formed films was satisfactorily explained in terms of chemical compound formation by polyenergetic ion implantation. The influence of the copper impurity on the formation of the cubic boron nitride phase is demonstrated. It has also been shown that low concentrations of copper promote cubic BN boundary formation.

TEM Studies of Boron-Modified 17Cr-7Ni Precipitation-Hardenable Stainless Steel via Rapid Solidification Route

NASA Astrophysics Data System (ADS)

Gupta, Ankur; Bhargava, A. K.; Tewari, R.; Tiwari, A. N.

2013-09-01

Commercial grade 17Cr-7Ni precipitation-hardenable stainless steel has been modified by adding boron in the range 0.45 to 1.8 wt pct and using the chill block melt-spinning technique of rapid solidification (RS). Application of RS has been found to increase the solid solubility of boron and hardness of 17Cr-7Ni precipitation-hardenable stainless steel. The hardness of the boron-modified rapidly solidified alloys has been found to increase up to ~280 pct after isochronal aging to peak hardness. A TEM study has been carried out to understand the aging behavior. The presence of M23(B,C)6 and M2(B,C) borocarbides and epsilon-carbide in the matrix of austenite and ferrite with a change in heat treatment temperature has been observed. A new equation for Creq is also developed which includes the boron factor on ferrite phase stability. The study also emphasizes that aluminum only takes part in ferrite phase stabilization and remains in the solution.

Influencing factors and kinetics analysis on the leaching of iron from boron carbide waste-scrap with ultrasound-assisted method.

PubMed

Li, Xin; Xing, Pengfei; Du, Xinghong; Gao, Shuaibo; Chen, Chen

2017-09-01

In this paper, the ultrasound-assisted leaching of iron from boron carbide waste-scrap was investigated and the optimization of different influencing factors had also been performed. The factors investigated were acid concentration, liquid-solid ratio, leaching temperature, ultrasonic power and frequency. The leaching of iron with conventional method at various temperatures was also performed. The results show the maximum iron leaching ratios are 87.4%, 94.5% for 80min-leaching with conventional method and 50min-leaching with ultrasound assistance, respectively. The leaching of waste-scrap with conventional method fits the chemical reaction-controlled model. The leaching with ultrasound assistance fits chemical reaction-controlled model, diffusion-controlled model for the first stage and second stage, respectively. The assistance of ultrasound can greatly improve the iron leaching ratio, accelerate the leaching rate, shorten leaching time and lower the residual iron, comparing with conventional method. The advantages of ultrasound-assisted leaching were also confirmed by the SEM-EDS analysis and elemental analysis of the raw material and leached solid samples. Copyright © 2017 Elsevier B.V. All rights reserved.

Convergence acceleration of molecular dynamics methods for shocked materials using velocity scaling

NASA Astrophysics Data System (ADS)

Taylor, DeCarlos E.

2017-03-01

In this work, a convergence acceleration method applicable to extended system molecular dynamics techniques for shock simulations of materials is presented. The method uses velocity scaling to reduce the instantaneous value of the Rankine-Hugoniot conservation of energy constraint used in extended system molecular dynamics methods to more rapidly drive the system towards a converged Hugoniot state. When used in conjunction with the constant stress Hugoniostat method, the velocity scaled trajectories show faster convergence to the final Hugoniot state with little difference observed in the converged Hugoniot energy, pressure, volume and temperature. A derivation of the scale factor is presented and the performance of the technique is demonstrated using the boron carbide armour ceramic as a test material. It is shown that simulation of boron carbide Hugoniot states, from 5 to 20 GPa, using both a classical Tersoff potential and an ab initio density functional, are more rapidly convergent when the velocity scaling algorithm is applied. The accelerated convergence afforded by the current algorithm enables more rapid determination of Hugoniot states thus reducing the computational demand of such studies when using expensive ab initio or classical potentials.

Neutron shielding behavior of thermoplastic natural rubber/boron carbide composites

NASA Astrophysics Data System (ADS)

Mat Zali, Nurazila; Yazid, Hafizal; Megat Ahmad, Megat Harun Al Rashid

2018-01-01

Many shielding materials have been designed against the harm of different types of radiation to the human body. Today, polymer-based lightweight composites have been chosen by the radiation protection industry. In the present study, thermoplastic natural rubber (TPNR) composites with different weight percent of boron carbide (B4C) fillers (0% to 30%) were fabricated as neutron shielding through melt blending method. Neutron attenuation properties of TPNR/B4C composites have been investigated. The macroscopic cross section (Σ), half value layer (HVL) and mean free path length (λ) of the composites have been calculated and the transmission curves have been plotted. The obtained results show that Σ, HVL and λ greatly depend on the B4C content. Addition of B4C fillers into TPNR matrix were found to enhance the macroscopic cross section values thus decrease the mean free path length (λ) and half value layer (HVL) of the composites. The transmission curves exhibited that the neutron transmission of the composites decreased with increasing shielding thickness. These results showed that TPNR/B4C composites have high potential for neutron shielding applications.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

1995-01-01

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Effect of chromium and phosphorus on the physical properties of iron and titanium-based amorphous metallic alloy films

NASA Technical Reports Server (NTRS)

Distefano, S.; Rameshan, R.; Fitzgerald, D. J.

1991-01-01

Amorphous iron and titanium-based alloys containing various amounts of chromium, phosphorus, and boron exhibit high corrosion resistance. Some physical properties of Fe and Ti-based metallic alloy films deposited on a glass substrate by a dc-magnetron sputtering technique are reported. The films were characterized using differential scanning calorimetry, stress analysis, SEM, XRD, SIMS, electron microprobe, and potentiodynamic polarization techniques.

Penetration of tungsten-alloy rods into composite ceramic targets: Experiments and 2-D simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rosenberg, Z.; Dekel, E.; Hohler, V.

1998-07-10

A series of terminal ballistics experiments, with scaled tungsten-alloy penetrators, was performed on composite targets consisting of ceramic tiles glued to thick steel backing plates. Tiles of silicon-carbide, aluminum nitride, titanium-dibroide and boron-carbide were 20-80 mm thick, and impact velocity was 1.7 km/s. 2-D numerical simulations, using the PISCES code, were performed in order to simulate these shots. It is shown that a simplified version of the Johnson-Holmquist failure model can account for the penetration depths of the rods but is not enough to capture the effect of lateral release waves on these penetrations.

Development of particle induced gamma-ray emission methods for nondestructive determination of isotopic composition of boron and its total concentration in natural and enriched samples.

PubMed

Chhillar, Sumit; Acharya, Raghunath; Sodaye, Suparna; Pujari, Pradeep K

2014-11-18

We report simple particle induced gamma-ray emission (PIGE) methods using a 4 MeV proton beam for simultaneous and nondestructive determination of the isotopic composition of boron ((10)B/(11)B atom ratio) and total boron concentrations in various solid samples with natural isotopic composition and enriched with (10)B. It involves measurement of prompt gamma-rays at 429, 718, and 2125 keV from (10)B(p,αγ)(7)Be, (10)B(p, p'γ)(10)B, and (11)B(p, p'γ)(11)B reactions, respectively. The isotopic composition of boron in natural and enriched samples was determined by comparing peak area ratios corresponding to (10)B and (11)B of samples to natural boric acid standard. An in situ current normalized PIGE method, using F or Al, was standardized for total B concentration determination. The methods were validated by analyzing stoichiometric boron compounds and applied to samples such as boron carbide, boric acid, carborane, and borosilicate glass. Isotopic compositions of boron in the range of 0.247-2.0 corresponding to (10)B in the range of 19.8-67.0 atom % and total B concentrations in the range of 5-78 wt % were determined. It has been demonstrated that PIGE offers a simple and alternate method for total boron as well as isotopic composition determination in boron based solid samples, including neutron absorbers that are important in nuclear technology.

High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qian, J. C.; Department of Engineering Physics, Polytechnique Montréal, Montreal, Quebec H3A 3A7; Jha, S. K., E-mail: skylec@gmail.com, E-mail: apwjzh@cityu.edu.hk

2014-11-10

Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.

Compositions of corrosion-resistant Fe-based amorphous metals suitable for producing thermal spray coatings

DOEpatents

Farmer, Joseph C; Wong, Frank M.G.; Haslam, Jeffery J; Ji, Xiaoyan; Day, Sumner D; Blue, Craig A; Rivard, John D.K.; Aprigliano, Louis F; Kohler, Leslie K; Bayles, Robert; Lemieux, Edward J; Yang, Nancy; Perepezko, John H; Kaufman, Larry; Heuer, Arthur; Lavernia, Enrique J

2013-09-03

A method of coating a surface comprising providing a source of amorphous metal that contains manganese (1 to 3 atomic %), yttrium (0.1 to 10 atomic %), and silicon (0.3 to 3.1 atomic %) in the range of composition given in parentheses; and that contains the following elements in the specified range of composition given in parentheses: chromium (15 to 20 atomic %), molybdenum (2 to 15 atomic %), tungsten (1 to 3 atomic %), boron (5 to 16 atomic %), carbon (3 to 16 atomic %), and the balance iron; and applying said amorphous metal to the surface by a spray.

Compositions of corrosion-resistant Fe-based amorphous metals suitable for producing thermal spray coatings

DOEpatents

Farmer, Joseph C.; Wong, Frank M. G.; Haslam, Jeffery J.; Ji, Xiaoyan; Day, Sumner D.; Blue, Craig A.; Rivard, John D. K.; Aprigliano, Louis F.; Kohler, Leslie K.; Bayles, Robert; Lemieux, Edward J.; Yang, Nancy; Perepezko, John H.; Kaufman, Larry; Heuer, Arthur; Lavernia, Enrique J.

2013-07-09

A method of coating a surface comprising providing a source of amorphous metal that contains manganese (1 to 3 atomic %), yttrium (0.1 to 10 atomic %), and silicon (0.3 to 3.1 atomic %) in the range of composition given in parentheses; and that contains the following elements in the specified range of composition given in parentheses: chromium (15 to 20 atomic %), molybdenum (2 to 15 atomic %), tungsten (1 to 3 atomic %), boron (5 to 16 atomic %), carbon (3 to 16 atomic %), and the balance iron; and applying said amorphous metal to the surface by a spray.

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

NASA Astrophysics Data System (ADS)

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

2016-09-01

Silicon carbide (SiC) with a high-density of planar defects (hereafter, 'nano-engineered SiC') and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. It was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

Solid-state graphene formation via a nickel carbide intermediate phase [Nickel carbide (Ni 3C) as an intermediate phase for graphene formation

DOE PAGES

Xiong, W; Zhou, Yunshen; Hou, Wenjia; ...

2015-11-10

Direct formation of graphene with controlled number of graphitic layers on dielectric surfaces is highly desired for practical applications. Despite significant progress achieved in understanding the formation of graphene on metallic surfaces through chemical vapor deposition (CVD) of hydrocarbons, very limited research is available elucidating the graphene formation process via rapid thermal processing (RTP) of solid-state amorphous carbon, through which graphene is formed directly on dielectric surfaces accompanied by autonomous nickel evaporation. It is suggested that a metastable hexagonal nickel carbide (Ni 3C) intermediate phase plays a critical role in transforming amorphous carbon to 2D crystalline graphene and contributing tomore » the autonomous Ni evaporation. Temperature resolved carbon and nickel evolution in the RTP process is investigated using Auger electron spectroscopic (AES) depth profiling and glancing-angle X-ray diffraction (GAXRD). Formation, migration and decomposition of the hexagonal Ni 3C are confirmed to be responsible for the formation of graphene and the evaporation of Ni at 1100 °C. The Ni 3C-assisted graphene formation mechanism expands the understanding of Ni-catalyzed graphene formation, and provides insightful guidance for controlled growth of graphene through the solid-state transformation process.« less

Genesis Silicon Carbide Concentrator Target 60003 Preliminary Ellipsometry Mapping Results

NASA Technical Reports Server (NTRS)

Calaway, M. J.; Rodriquez, M. C.; Stansbery, E. K.

2007-01-01

The Genesis concentrator was custom designed to focus solar wind ions primarily for terrestrial isotopic analysis of O-17/O-16 and O-18/O-16 to +/-1%, N-15/N-14 to +/-1%, and secondarily to conduct elemental and isotopic analysis of Li, Be, and B. The circular 6.2 cm diameter concentrator target holder was comprised of four quadrants of highly pure semiconductor materials that included one amorphous diamond-like carbon, one C-13 diamond, and two silicon carbide (SiC). The amorphous diamond-like carbon quadrant was fractured upon impact at Utah Test and Training Range (UTTR), but the remaining three quadrants survived fully intact and all four quadrants hold an important collection of solar wind. The quadrants were removed from the target holder at NASA Johnso n Space Center Genesis Curation Laboratory in April 2005, and have been housed in stainless steel containers under continual nitrogen purge since time of disintegration. In preparation for allocation of a silicon carbide target for oxygen isotope analyses at UCLA, the two SiC targets were photographed for preliminary inspection of macro particle contamination from the hard non-nominal landing as well as characterized by spectroscopic ellipsometry to evaluate thin film contamination. This report is focused on Genesis SiC target sample number 60003.

Carbide and carbonitride surface treatment method for refractory metals

DOEpatents

Meyer, G.A.; Schildbach, M.A.

1996-12-03

A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system including a reaction chamber, a source of elemental carbon, a heating subassembly and a source of reaction gases. Alternative methods of providing the elemental carbon and the reaction gases are provided, as well as methods of supporting the metal part, evacuating the chamber with a vacuum subassembly and heating all of the components to the desired temperature. 5 figs.

Dynamic properties of ceramic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grady, D.E.

1995-02-01

The present study offers new data and analysis on the transient shock strength and equation-of-state properties of ceramics. Various dynamic data on nine high strength ceramics are provided with wave profile measurements, through velocity interferometry techniques, the principal observable. Compressive failure in the shock wave front, with emphasis on brittle versus ductile mechanisms of deformation, is examined in some detail. Extensive spall strength data are provided and related to the theoretical spall strength, and to energy-based theories of the spall process. Failure waves, as a mechanism of deformation in the transient shock process, are examined. Strength and equation-of-state analysis ofmore » shock data on silicon carbide, boron carbide, tungsten carbide, silicon dioxide and aluminum nitride is presented with particular emphasis on phase transition properties for the latter two. Wave profile measurements on selected ceramics are investigated for evidence of rate sensitive elastic precursor decay in the shock front failure process.« less

Generalized Finsler geometric continuum physics with applications in fracture and phase transformations

NASA Astrophysics Data System (ADS)

Clayton, J. D.

2017-02-01

A theory of deformation of continuous media based on concepts from Finsler differential geometry is presented. The general theory accounts for finite deformations, nonlinear elasticity, and changes in internal state of the material, the latter represented by elements of a state vector of generalized Finsler space whose entries consist of one or more order parameter(s). Two descriptive representations of the deformation gradient are considered. The first invokes an additive decomposition and is applied to problems involving localized inelastic deformation mechanisms such as fracture. The second invokes a multiplicative decomposition and is applied to problems involving distributed deformation mechanisms such as phase transformations or twinning. Appropriate free energy functions are posited for each case, and Euler-Lagrange equations of equilibrium are derived. Solutions are obtained for specific problems of tensile fracture of an elastic cylinder and for amorphization of a crystal under spherical and uniaxial compression. The Finsler-based approach is demonstrated to be more general and potentially more physically descriptive than existing hyperelasticity models couched in Riemannian geometry or Euclidean space, without incorporation of supplementary ad hoc equations or spurious fitting parameters. Predictions for single crystals of boron carbide ceramic agree qualitatively, and in many instances quantitatively, with results from physical experiments and atomic simulations involving structural collapse and failure of the crystal along its c-axis.

Lightweight high performance ceramic material

DOEpatents

Nunn, Stephen D [Knoxville, TN

2008-09-02

A sintered ceramic composition includes at least 50 wt. % boron carbide and at least 0.01 wt. % of at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy Ho, Er, Tm, Yb, and Lu, the sintered ceramic composition being characterized by a density of at least 90% of theoretical density.

In Situ Observations of Phase Transitions in Metastable Nickel (Carbide)/Carbon Nanocomposites

PubMed Central

2016-01-01

Nanocomposite thin films comprised of metastable metal carbides in a carbon matrix have a wide variety of applications ranging from hard coatings to magnetics and energy storage and conversion. While their deposition using nonequilibrium techniques is established, the understanding of the dynamic evolution of such metastable nanocomposites under thermal equilibrium conditions at elevated temperatures during processing and during device operation remains limited. Here, we investigate sputter-deposited nanocomposites of metastable nickel carbide (Ni3C) nanocrystals in an amorphous carbon (a-C) matrix during thermal postdeposition processing via complementary in situ X-ray diffractometry, in situ Raman spectroscopy, and in situ X-ray photoelectron spectroscopy. At low annealing temperatures (300 °C) we observe isothermal Ni3C decomposition into face-centered-cubic Ni and amorphous carbon, however, without changes to the initial finely structured nanocomposite morphology. Only for higher temperatures (400–800 °C) Ni-catalyzed isothermal graphitization of the amorphous carbon matrix sets in, which we link to bulk-diffusion-mediated phase separation of the nanocomposite into coarser Ni and graphite grains. Upon natural cooling, only minimal precipitation of additional carbon from the Ni is observed, showing that even for highly carbon saturated systems precipitation upon cooling can be kinetically quenched. Our findings demonstrate that phase transformations of the filler and morphology modifications of the nanocomposite can be decoupled, which is advantageous from a manufacturing perspective. Our in situ study also identifies the high carbon content of the Ni filler crystallites at all stages of processing as the key hallmark feature of such metal–carbon nanocomposites that governs their entire thermal evolution. In a wider context, we also discuss our findings with regard to the much debated potential role of metastable Ni3C as a catalyst phase in graphene and carbon nanotube growth. PMID:27746852

Ablation-resistant carbide Zr0.8Ti0.2C0.74B0.26 for oxidizing environments up to 3,000 °C

NASA Astrophysics Data System (ADS)

Zeng, Yi; Wang, Dini; Xiong, Xiang; Zhang, Xun; Withers, Philip J.; Sun, Wei; Smith, Matthew; Bai, Mingwen; Xiao, Ping

2017-06-01

Ultra-high temperature ceramics are desirable for applications in the hypersonic vehicle, rockets, re-entry spacecraft and defence sectors, but few materials can currently satisfy the associated high temperature ablation requirements. Here we design and fabricate a carbide (Zr0.8Ti0.2C0.74B0.26) coating by reactive melt infiltration and pack cementation onto a C/C composite. It displays superior ablation resistance at temperatures from 2,000-3,000 °C, compared to existing ultra-high temperature ceramics (for example, a rate of material loss over 12 times better than conventional zirconium carbide at 2,500 °C). The carbide is a substitutional solid solution of Zr-Ti containing carbon vacancies that are randomly occupied by boron atoms. The sealing ability of the ceramic's oxides, slow oxygen diffusion and a dense and gradient distribution of ceramic result in much slower loss of protective oxide layers formed during ablation than other ceramic systems, leading to the superior ablation resistance.

Ablation-resistant carbide Zr0.8Ti0.2C0.74B0.26 for oxidizing environments up to 3,000 °C.

PubMed

Zeng, Yi; Wang, Dini; Xiong, Xiang; Zhang, Xun; Withers, Philip J; Sun, Wei; Smith, Matthew; Bai, Mingwen; Xiao, Ping

2017-06-14

Ultra-high temperature ceramics are desirable for applications in the hypersonic vehicle, rockets, re-entry spacecraft and defence sectors, but few materials can currently satisfy the associated high temperature ablation requirements. Here we design and fabricate a carbide (Zr 0.8 Ti 0.2 C 0.74 B 0.26 ) coating by reactive melt infiltration and pack cementation onto a C/C composite. It displays superior ablation resistance at temperatures from 2,000-3,000 °C, compared to existing ultra-high temperature ceramics (for example, a rate of material loss over 12 times better than conventional zirconium carbide at 2,500 °C). The carbide is a substitutional solid solution of Zr-Ti containing carbon vacancies that are randomly occupied by boron atoms. The sealing ability of the ceramic's oxides, slow oxygen diffusion and a dense and gradient distribution of ceramic result in much slower loss of protective oxide layers formed during ablation than other ceramic systems, leading to the superior ablation resistance.

Ablation-resistant carbide Zr0.8Ti0.2C0.74B0.26 for oxidizing environments up to 3,000 °C

PubMed Central

Zeng, Yi; Wang, Dini; Xiong, Xiang; Zhang, Xun; Withers, Philip J.; Sun, Wei; Smith, Matthew; Bai, Mingwen; Xiao, Ping

2017-01-01

Ultra-high temperature ceramics are desirable for applications in the hypersonic vehicle, rockets, re-entry spacecraft and defence sectors, but few materials can currently satisfy the associated high temperature ablation requirements. Here we design and fabricate a carbide (Zr0.8Ti0.2C0.74B0.26) coating by reactive melt infiltration and pack cementation onto a C/C composite. It displays superior ablation resistance at temperatures from 2,000–3,000 °C, compared to existing ultra-high temperature ceramics (for example, a rate of material loss over 12 times better than conventional zirconium carbide at 2,500 °C). The carbide is a substitutional solid solution of Zr–Ti containing carbon vacancies that are randomly occupied by boron atoms. The sealing ability of the ceramic’s oxides, slow oxygen diffusion and a dense and gradient distribution of ceramic result in much slower loss of protective oxide layers formed during ablation than other ceramic systems, leading to the superior ablation resistance. PMID:28613275

Thermal reaction of sonochemically prepared amorphous Fe/C

NASA Astrophysics Data System (ADS)

Miyatani, R.; Kobayashi, Y.; Yamada, Y.

2017-11-01

An amorphous iron/carbon mixture was prepared by sonolysis of ferrocene in diphenylmethane. Heating of the amorphous mixture at 900 or 1200 °C produced nanoparticles, which were then analyzed using Mössbauer spectroscopy, X-ray diffraction, and transmission electron microscopy. The nanoparticles obtained after heating were spherical with diameters of about 50 nm. The sample obtained after heating at 900 °C consisted of α-Fe and Fe 3C, whereas the sample obtained after heating at 1200 °C consisted of α-Fe and γ-Fe. The reaction of the mixture during the heating process was accompanied by the formation of carbon nanotubes catalyzed by the iron or iron carbide nanoparticles.

Direct Transformation of Amorphous Silicon Carbide into Graphene under Low Temperature and Ambient Pressure

PubMed Central

Peng, Tao; Lv, Haifeng; He, Daping; Pan, Mu; Mu, Shichun

2013-01-01

A large-scale availability of the graphene is critical to the successful application of graphene-based electronic devices. The growth of epitaxial graphene (EG) on insulating silicon carbide (SiC) surfaces has opened a new promising route for large-scale high-quality graphene production. However, two key obstacles to epitaxial growth are extremely high requirements for almost perfectly ordered crystal SiC and harsh process conditions. Here, we report that the amorphous SiC (a-Si1−xCx) nano-shell (nano-film) can be directly transformed into graphene by using chlorination method under very mild reaction conditions of relative low temperature (800°C) and the ambient pressure in chlorine (Cl2) atmosphere. Therefore, our finding, the direct transformation of a-Si1−xCx into graphene under much milder condition, will open a door to apply this new method to the large-scale production of graphene at low costs. PMID:23359349

Alloy Design of Martensitic 9Cr-Boron Steel for A-USC Boiler at 650 °C — Beyond Grades 91, 92 and 122

NASA Astrophysics Data System (ADS)

Abe, Fujio; Tabuchi, M.; Tsukamoto, S.

Boundary hardening is shown to be the most important strengthening mechanism in creep of tempered martensitic 9% Cr steel base metal and welded joints at 650 °C. The enrichment of soluble boron near prior austenite grain boundaries (PAGBs) by the GB segregation is essential for the reduction of coarsening rate of M23C6 carbides near PAGBs, enhancing the boundary and sub-boundary hardening near PAGBs, and also for the change in α/γ transformation behavior in heat-affected-zone (HAZ) of welded joints during heating of welding, producing the same microstructure in HAZ as in the base metal. Excess addition of nitrogen to the 9Cr-boron steel promotes the formation of boron nitrides during normalizing heat treatment, which consumes most of soluble boron and degrades the creep strength. A NIMS 9Cr steel (MARBN; Martensitic 9Cr steel strengthened by boron and MX nitrides) with 120-150 ppm boron and 60-90 ppm nitrogen, where no boron nitride forms during normalizing heat treatment, exhibits not only much higher creep strength of base metal than Grades 91, 92 and 122 but also substantially no degradation in creep strength due to Type IV fracture in HAZ of welded joints at 650°C. The protective Cr2O3-rich scale forms on the surface of 9Cr steel by pre-oxidation treatment in Ar gas, which significantly improves the oxidation resistance in steam at 650°C.

High Energy Advanced Thermal Storage for Spacecraft Solar Thermal Power and Propulsion Systems

DTIC Science & Technology

2011-10-12

Vol. 108, No. 6, June 1961, pp. 568-572. 38. Storms, E. and Mueller, B., "Phase Relations and Thermodynamic Properties of Transition Metal Borides ...T., and Naka, S., "Formation Process of Tungsten Borides by Solid State Reaction Between Tungsten and Amorphous Boron," Journal of Materials...Molybdenum- Borides ," Journal of Metals, September 1952, pp. 983-988. 41. Ellis, R.C., “Various Preparations of Elemental Boron,” Proceedings of the 1st

Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

DOEpatents

Yang, Liyou

1993-10-26

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Functional Multi-Nanolayer Coatings of Amorphous Carbon/Tungsten Carbide with Exceptional Mechanical Durability and Corrosion Resistance.

PubMed

Nemati, Narguess; Bozorg, Mansoor; Penkov, Oleksiy V; Shin, Dong-Gap; Sadighzadeh, Asghar; Kim, Dae-Eun

2017-09-06

A novel functional multilayer coating with periodically stacked nanolayers of amorphous carbon (a:C)/tungsten carbide (WC) and an adhesion layer of chromium (Cr) was deposited on 304 stainless steel using a dual magnetron sputtering technique. Through process optimization, highly densified coatings with high elasticity and shear modulus, excellent wear resistance, and minimal susceptibility to corrosive and caustic media could be acquired. The structural and mechanical properties of the optimized coatings were studied in detail using a variety of analytical techniques. Furthermore, finite element method simulations indicated that the stress generated due to contact against a steel ball was distributed well within the coating, which allowed the stresses to be lower than the yield threshold of the coating. Thus, an ultralow wear rate of ∼10 -12 mm 3 /N mm could be achieved in dry sliding conditions under relatively high Hertzian contact pressures of ∼0.4-0.9 GPa. The amorphous and pinhole-free structure of the individual layers, sufficient number of pairs, and the relatively dense stacked layers resulted in significant polarization resistance (Z″ = 5.5 × 10 6 Ω cm 2 ) and increased the corrosion resistance of the coating by 10-fold compared to that of recently reported corrosion-resistant coatings.

Using Plasticity Values Determined From Systematic Hardness Indentation Measurements for Predicting Impact Behavior in Structural Ceramics: A New, Simple Screening Technique

DTIC Science & Technology

2009-09-01

kFc ) is shown to fit the Knoop data quite well. A plot of log10 (HK) vs. log10 (F) yielded easily comparable straight lines, whose slope and...AlON), silicon carbide, aluminum oxide and boron carbide. A power-law equation (H = kFc ) is shown to fit the Knoop data quite well. A plot of log10... kFc HK= 24.183 F-0.0699 R2= 0.97 H K (G Pa ) Load (N) HK = a/F + b ErrorValue 0.919483.7367a 0.6903619.361b NA25.591Chisq NA0.67368R2 1 1.1 1.2

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou

Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

DOE PAGES

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; ...

2016-06-19

Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

Novel Processing of Boron Carbide (B4C): Plasma Synthesized Nano Powders and Pressureless Sintering Forming of Complex Shapes

DTIC Science & Technology

2008-12-01

Figure 4. B4C plates formed via hot pressing with a curved shape. Commercial B4C shows a large number of lenticular graphitic inclusions, Figure 5...materials and they act as crack initiation points in flexure testing. Figure 5. SEM micrograph showing large lenticular graphitic inclusions in commercial

Parametric Thermal and Flow Analysis of ITER Diagnostic Shield Module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khodak, A.; Zhai, Y.; Wang, W.

As part of the diagnostic port plug assembly, the ITER Diagnostic Shield Module (DSM) is designed to provide mechanical support and the plasma shielding while allowing access to plasma diagnostics. Thermal and hydraulic analysis of the DSM was performed using a conjugate heat transfer approach, in which heat transfer was resolved in both solid and liquid parts, and simultaneously, fluid dynamics analysis was performed only in the liquid part. ITER Diagnostic First Wall (DFW) and cooling tubing were also included in the analysis. This allowed direct modeling of the interface between DSM and DFW, and also direct assessment of themore » coolant flow distribution between the parts of DSM and DFW to ensure DSM design meets the DFW cooling requirements. Design of the DSM included voids filled with Boron Carbide pellets, allowing weight reduction while keeping shielding capability of the DSM. These voids were modeled as a continuous solid with smeared material properties using analytical relation for thermal conductivity. Results of the analysis lead to design modifications improving heat transfer efficiency of the DSM. Furthermore, the effect of design modifications on thermal performance as well as effect of Boron Carbide will be presented.« less

Development of a process for producing ribbon shaped filaments. [production of silicon carbide filaments

NASA Technical Reports Server (NTRS)

Debolt, H. E.; Krukonis, V. J.

1973-01-01

Silicon carbide (SiC) ribbon filaments were produced on a carbon ribbon substrate, about 1500 microns (60 mils) wide and 100 microns (4 mils) thick in lengths up to 2 meters (6 ft), and with tensile strengths up to 142 KN/cm sq (206 Ksi). During the course of the study, ribbon filaments of boron were also produced on the carbon ribbon substrate; the boron ribbon produced was extremely fragile. The tensile strength of the SiC ribbon was limited by large growths or flaws caused by anomalies at the substrate surface; these anomalies were either foreign dirt or substrate imperfections or both. Related work carried out on round 100 micron (4 mils) diameter SiC filaments on a 33 micron (1.3 mil) diameter, very smooth carbon monofilament substrate has shown that tensile strengths as high as 551 KN/cm sq (800 Ksi) are obtainable with the SiC-carbon round substrate combination, and indicates that if the ribbon substrate surface and ribbon deposition process can be improved similar strengths can be realizable. Cost analysis shows that 100 micron x 5-10 micron SiC ribbon can be very low cost reinforcement material.

Modeling Issues and Results for Hydrogen Isotopes in NIF Materials

NASA Astrophysics Data System (ADS)

Grossman, Arthur A.; Doerner, R. P.; Luckhardt, S. C.; Seraydarian, R.; Sze, D.; Burnham, A.

1998-11-01

The TMAP4 (G. Longhurst, et al. INEL 1992) model of hydrogen isotope transport in solid materials includes a particle diffusion calculation with Fick's Law modified for Soret Effect (Thermal Diffusion or Thermomigration), coupled to heat transport calculations which are needed because of the strong temperature dependence of diffusivity. These TMAP4 calculations applied to NIF show that high temperatures approaching the melting point and strong thermal gradients of 10^6 K/cm are reached in the first micron of wall material during the SXR pulse. These strong thermal gradients can drive hydrogen isotope migration up or down the thermal gradient depending on the sign of the heat of transport (Soret coefficient) which depends on whether the material dissolves hydrogen endothermically or exothermically. Two candidates for NIF wall material-boron carbide and stainless steel are compared. Boron carbide dissolves hydrogen exothermically so it may drive Soret migration down the thermal gradient deeper into the material, although the thermal gradient is not as large and hydrogen is not as mobile as in stainless steel. Stainless steel dissolves hydrogen endothermically, with a negative Soret coefficient which can drive hydrogen up the thermal gradient and out of the wall.

B{sub 4}C-SiC reaction-sintered coatings on graphite plasma facing components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valentine, P.G.; Trester, P.W.; Winter, J.

1994-05-01

Boron carbide plus silicon carbide (B{sub 4}C-SiC) reaction-sintered coatings for use on graphite plasma-facing components were developed. Such coatings are of interest in TEXTOR tokamak limiter-plasma interactions as a means of reducing carbon erosion, of providing a preferred release of boron for oxygen gettering, and of investigating silicon`s effect on radiative edge phenomena. Specimens evaluated had (a) either Ringsdorfwerke EK 98 graphite or Le Carbon Lorraine felt-type AEROLOR A05 CFC substrates; (b) multiphase coatings, comprised of B{sub 4}C, Sic, and graphite; (c) nominal coating compositions of 69 wt.-% B{sub 4}C + 31 wt.-% SiC; and (d) nominal coating thicknesses betweenmore » 250 and 775 {mu}m. Coated coupons were evaluated by high heat flux experiments in the JUDITH (electron beam) test facility at KFA. Simulated disruptions, with energy densities up to 10 MJm{sup {minus}2}, and normal operation simulations, with power densities up to 12 MWm{sup {minus}2}, were conducted. The coatings remained adherent; at the highest levels tested, minor changes occurred, including localized remelting, modification of the crystallographic phases, occasional microcracking, and erosion.« less

Parametric Thermal and Flow Analysis of ITER Diagnostic Shield Module

DOE PAGES

Khodak, A.; Zhai, Y.; Wang, W.; ...

2017-06-19

As part of the diagnostic port plug assembly, the ITER Diagnostic Shield Module (DSM) is designed to provide mechanical support and the plasma shielding while allowing access to plasma diagnostics. Thermal and hydraulic analysis of the DSM was performed using a conjugate heat transfer approach, in which heat transfer was resolved in both solid and liquid parts, and simultaneously, fluid dynamics analysis was performed only in the liquid part. ITER Diagnostic First Wall (DFW) and cooling tubing were also included in the analysis. This allowed direct modeling of the interface between DSM and DFW, and also direct assessment of themore » coolant flow distribution between the parts of DSM and DFW to ensure DSM design meets the DFW cooling requirements. Design of the DSM included voids filled with Boron Carbide pellets, allowing weight reduction while keeping shielding capability of the DSM. These voids were modeled as a continuous solid with smeared material properties using analytical relation for thermal conductivity. Results of the analysis lead to design modifications improving heat transfer efficiency of the DSM. Furthermore, the effect of design modifications on thermal performance as well as effect of Boron Carbide will be presented.« less

Friction and wear of some ferrous-base metallic glasses

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1983-01-01

Sliding friction experiments, X-ray photoelectron spectroscopy (XPS) analysis, and electron microscopy and diffraction studies were conducted with ferrous base metallic glasses (amorphous alloys) in contact with aluminum oxide at temperatures to 750 C in a vacuum. Sliding friction experiments were also conducted in argon and air atmospheres. The results of the investigation indicate that the coefficient of friction increases with increasing temperature to 350 C in vacuum. The increase in friction is due to an increase in adhesion resulting from surface segregation of boric oxide and/or silicon oxide to the surface of the foil. Above 500 C the coefficient of friction decreased rapidly. The decrease correlates with the segregation of boron nitride to the surface. Contaminants can come from the bulk of the material to the surface upon heating and impart boric oxide and/or silicon oxide at 350 C and boron nitride above 500 C. The segregation of contaminants is responsible for the friction behavior. The amorphous alloys have superior wear resistance to crystalline 304 stainless steel. The relative concentrations of the various constituents at the surfaces of the amorphous alloys are very different from the nominal bulk compositions.

Friction and wear of some ferrous-base metallic glasses

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1984-01-01

Sliding friction experiments, X-ray photoelectron spectroscopy (XPS) analysis, and electron microscopy and diffraction studies were conducted with ferrous base metallic glasses (amorphous alloys) in contact with aluminium oxide at temperatures to 750 C in a vacuum. Sliding friction experiments were also conducted in argon and air atmospheres. The results of the investigation indicate that the coefficient of friction increases with increasing temperature to 350 C in vacuum. The increase in friction is due to an increase in adhesion resulting from surface segregation of boric oxide and/or silicon oxide to the surface of the foil. Above 500 C the coefficient of friction decreased rapidly. The decrease correlates with the segregation of boron nitride to the surface. Contaminants can come from the bulk of the material to the surface upon heating and impart boric oxide and/or silicon oxide at 350 C and boron nitride above 500 C. The segregation of contaminants is responsible for the friction behavior. The amorphous alloys have superior wear resistance to crystalline 304 stainless steel. The relative concentrations of the various constituents at the surfaces of the amorphous alloys are very different from the nominal bulk compositions.

Synthesis of Nanostructured Carbides of Titanium and Vanadium from Metal Oxides and Ferroalloys Through High-energy Mechanical Milling and Heat Treatment

NASA Astrophysics Data System (ADS)

Basu, P.; Jian, P. F.; Seong, K. Y.; Seng, G. S.; Masrom, A. K.; Hussain, Z.; Aziz, A.

2010-03-01

Carbides of Ti and V have been synthesized directly from their oxides and ferroalloys through mechanical milling and heat treatment. The powder mixtures are milled in a planetary ball mill from 15-80 hours and subsequently heat treated at 1000-1300° C for TiO2-C mixtures, at 500-550° C for V2O5-C mixtures and at 600-1000° C for (Fe-V)-C mixtures. The milled and heat treated powders are characterized by SEM, EDAX, XRD, and BET techniques. Nanostructured TiC has been successfully synthesized under suitable processing conditions. However, carbides of vanadium is unidentified even though possibilities of V2O5-C reaction are indicated with an extent of induced amorphism in the powder mixture. Density, specific surface area and particle size of the milled and heat treated mixtures are correlated with heat treatment temperatures. Similar attempts are also made to synthesize vanadium carbides from industrial grade Fe-V.

Studies of lithiumization and boronization of ATJ graphite PFCs for NSTX-U

NASA Astrophysics Data System (ADS)

Dominguez, Javier; Bedoya, Felipe; Krstic, Predrag; Allain, Jean Paul; Neff, Anton; Luitjohan, Kara

2016-10-01

We examine and compare the effects of boron and lithium conditioning on ATJ graphite surfaces bombarded by low-energy deuterium atoms on deuterium retention and chemical sputtering. We use atomistic simulations and compare them with experimental in-situ ex-tempore studies with X-ray photoelectron spectroscopy (XPS), to understand the effects of deuterium exposure on the chemistry in lithiated, boronized and oxidized amorphous carbon surfaces. Our results are validated qualitatively by comparison with experiments and with classical-quantum molecular dynamic simulations. We explain the important role of oxygen in D retention for lithiated surfaces and the suppression of the oxygen role by boron in boronized surfaces. The calculated increase of the oxygen role in deuterium uptake after D accumulation in a B-C-O surface configuration is discussed. The sputtering yield per low-energy D impact is significantly smaller in boronized surfaces than in lithiated surfaces. This work was supported by the USDOE Grants DE-SC0013752 (PSK), DE-SC0010717 (JPA and FB) and DE-SC0010719 (AN) and by National council for Science and Technology of Mexico (CONACyT) through postdoctoral fellowship # 267898 (JD).

Synthesis of boron nitride nanostructures from catalyst of iron compounds via thermal chemical vapor deposition technique

NASA Astrophysics Data System (ADS)

da Silva, Wellington M.; Ribeiro, Hélio; Ferreira, Tiago H.; Ladeira, Luiz O.; Sousa, Edésia M. B.

2017-05-01

For the first time, patterned growth of boron nitride nanostructures (BNNs) is achieved by thermal chemical vapor deposition (TCVD) technique at 1150 °C using a mixture of FeS/Fe2O3 catalyst supported in alumina nanostructured, boron amorphous and ammonia (NH3) as reagent gas. This innovative catalyst was synthesized in our laboratory and systematically characterized. The materials were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), Thermogravimetric analysis (TGA), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The X-ray diffraction profile of the synthesized catalyst indicates the coexistence of three different crystal structures showing the presence of a cubic structure of iron oxide and iron sulfide besides the gamma alumina (γ) phase. The results show that boron nitride bamboo-like nanotubes (BNNTs) and hexagonal boron nitride (h-BN) nanosheets were successfully synthesized. Furthermore, the important contribution of this work is the manufacture of BNNs from FeS/Fe2O3 mixture.

Preparation of hollow mesoporous carbon spheres and their performances for electrochemical applications

NASA Astrophysics Data System (ADS)

Ariyanto, T.; Zhang, G. R.; Kern, A.; Etzold, B. J. M.

2018-03-01

Hollow carbon materials have received intensive attention for energy storage/conversion applications due to their attractive properties of high conductivity, high surface area, large void and short diffusion pathway. In this work, a novel hollow mesoporous material based on carbide-derived carbon (CDC) is presented. CDC is a new class of carbon material synthesized by the selective extraction of metals from metal carbides. With a two-stage extraction procedure of carbides with chlorine, firstly hybrid core-shell carbon particles were synthesized, i.e. mesoporous/graphitic carbon shells covering microporous/amorphous carbon cores. The amorphous cores were then selectively removed from particles by a careful oxidative treatment utilizing its low thermal characters while the more stable carbon shells remained, thus resulting hollow particles. The characterization methods (e.g. N2 sorption, Raman spectroscopy, temperature-programmed oxidation and SEM) proved the successful synthesis of the aspired material. In electric double-layer capacitor (EDLC) testing, this novel hollow core material showed a remarkable enhancement of EDLC’s rate handling ability (75% at a high scan rate) with respect to an entirely solid-mesoporous material. Furthermore, as a fuel cell catalyst support the material showed higher Pt mass activity (a factor of 1.8) compared to a conventional carbon support for methanol oxidation without noticeably decreasing activity in a long-term testing. Therefore, this carbon nanostructure shows great promises as efficient electrode materials for energy storage and conversion systems.

Synthesis and properties of nickel cobalt boron nanoparticles

NASA Astrophysics Data System (ADS)

Patel, J.; Pankhurst, Q. A.; Parkin, I. P.

2005-01-01

Amorphous cobalt nickel boride nanoparticles were synthesised by chemical reduction synthesis in aqueous solution. Careful control of synthesis conditions and post reaction oxidation enabled the nanoparticles to be converted into a core-shell structure comprising of an amorphous Co-Ni-B core and an outer metal oxide sheet. These particles had interesting magnetic properties including saturation magnetisations and coercivities of the order of 80 emu/g and 170 Oe respectively, making them suitable for a potential use as an exchange-pinned magnetic material.

Application of DFT-Derived Relationships Between Chemical Environment and 29Si Nuclear Magnetic Resonance Spectroscopy to Determine Structure in Silicon Oxycarbide Ceramics

NASA Astrophysics Data System (ADS)

Nimmo, John Paul, II

Silicon oxycarbide (SiCO) is an amorphous ceramic material widely used in industrial applications, for its useful electronic and biologically-compatible properties. SiCO is resistant to crystallization, remaining amorphous even above temperatures at which amorphous SiO2 would crystallize. Though silica (SiO2) and silicon carbide (SiC) are almost immiscible, it is useful to consider the material as a phase composition of these along with carbon, according to the formula below. The first two terms in braces can be considered as being the "SiCO glass" into which a third term representing excess or "free" carbon is incorporated as graphite-like nano-flakes and bands.

Morphological, structural, and chemical effects in response of novel carbide derived carbon sensor to NH3, N2O, and air.

PubMed

Adu, Kofi W; Li, Qixiu; Desai, Sharvil C; Sidorov, Anton N; Sumanasekera, Gamini U; Lueking, Angela D

2009-01-06

The response of two carbide derived carbons (CDCs) films to NH(3), N(2)O, and room air is investigated by four probe resistance at room temperature and pressures up to 760 Torr. The two CDC films were synthesized at 600 (CDC-600) and 1000 degrees C (CDC-1000) to vary the carbon morphology from completely amorphous to more ordered, and determine the role of structure, surface area, and porosity on sensor response. Sensor response time followed kinetic diameter and indicated a more ordered carbon structure slowed response due to increased tortuosity caused by the formation of graphitic layers at the particle fringe. Steady state sensor response was greater for the less-ordered material, despite its decreased surface area, decreased micropore volume, and less favorable surface chemistry, suggesting carbon structure is a stronger predictor of sensor response than surface chemistry. The lack of correlation between adsorption of the probe gases and sensor response suggests chemical interaction (charge transfer) drive sensor response within the material; N(2)O response, in particular, did not follow simple adsorption behavior. Based on Raman and FTIR characterization, carbon morphology (disorder) appeared to be the determining factor in overall sensor response, likely due to increased charge transfer between gases and carbon defects of amorphous or disordered regions. The response of the amorphous CDC-600 film to NH(3) was 45% without prior oxidation, showing amorphous CDCs have promise as chemical sensors without additional pretreatment common to other carbon sensors.

Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Weilin; Jiao, Liang; Wang, Haiyan

2011-12-01

Response to irradiation of nanocrystalline 3C-SiC is studied using 2 MeV Au+ ions near the critical temperature for amorphization and is compared to the behavior of its monocrystalline counterpart under the identical irradiation conditions. The irradiated samples have been characterized using in-situ ion channeling, ex-situ x-ray diffraction, and helium ion microscopy. Compared to monocrystalline 3C-SiC, a faster amorphization process in the nanocrystalline material (average grain size = 3.3 nm) is observed at 500 K. However, the nanograin grows with increasing ion fluence at 550 K and the grain size tends to saturate at high fluences. The striking contrast demonstrates amore » sharp transition from irradiation-induced interface-driven amorphization at 500 K to crystallization at 550 K. The results could show potential impacts of nanocrystalline SiC on nuclear fuel cladding and structural components of next-generation nuclear energy systems.« less

Chemical Routes to Ceramics With Tunable Properties and Structures

DTIC Science & Technology

2006-07-26

thermolytic or chemical reactions, and then dissolution of the alumina membrane to leave the free standing fibers. In our work, we used alumina membranes ...converted the precursor to a boron carbide coating. Dissolution of the coated alumina membranes with HF then yielded free-standing nanocylindrical...construct, via sol-gel condensations, ordered macroporous arrays of titania , zirconia, and alumina . Other work employing the silica templates have

The thermal expansion and thermophysical properties of an aluminum and Al/B4C composite

NASA Astrophysics Data System (ADS)

Gladkovsky, S. V.; Kamantsev, I. S.; Kuteneva, S. V.; Veselova, V. E.; Ryzhkov, M. A.

2017-12-01

The paper presents results of experimental studies of the thermal expansion and thermophysical properties of an Al/B4C composite with a boron carbide content of 20 wt% and technically pure aluminum in the temperature range from 100 to 600°C to evaluate the possible use of this composite as a neutron-protective material in the nuclear industry.

Feasibility study of a small, thorium-based fission power system for space and terrestrial applications

NASA Astrophysics Data System (ADS)

Worrall, Michael Jason

One of the current challenges facing space exploration is the creation of a power source capable of providing useful energy for the entire duration of a mission. Historically, radioisotope batteries have been used to provide load power, but this conventional system may not be capable of sustaining continuous power for longer duration missions. To remedy this, many forays into nuclear powered spacecraft have been investigated, but no robust system for long-term power generation has been found. In this study, a novel spin on the traditional fission power system that represents a potential optimum solution is presented. By utilizing mature High Temperature Gas Reactor (HTGR) technology in conjunction with the capabilities of the thorium fuel cycle, we have created a light-weight, long-term power source capable of a continuous electric power output of up to 70kW for over 15 years. This system relies upon a combination of fissile, highly-enriched uranium dioxide and fertile thorium carbide Tri-Structural Isotropic (TRISO) fuel particles embedded in a hexagonal beryllium oxide matrix. As the primary fissile material is consumed, the fertile material breeds new fissile material leading to more steady fuel loading over the lifetime of the core. Reactor control is achieved through an innovative approach to the conventional boron carbide neutron absorber by utilizing sections of borated aluminum placed in rotating control drums within the reflector. Borated aluminum allows for much smaller boron concentrations, thus eliminating the potential for 10B(n,alpha)6Li heating issues that are common in boron carbide systems. A wide range of other reactivity control systems are also investigated, such as a radially-split rotating reflector. Lastly, an extension of the design to a terrestrial based system is investigated. In this system, uranium enrichment is dropped to 20 percent in order to meet current regulations, a solid uranium-zirconium hydride fissile driver replaces the uranium dioxide TRISO particles, and the moderating material is changed from beryllium oxide to graphite. These changes result in an increased core size, but the same long-term power generation potential is achieved. Additionally, small amounts of erbium are added to the hydride matrix to further extend core lifetime.

Superconductivity in two-dimensional phosphorus carbide (β0-PC).

PubMed

Wang, Bao-Tian; Liu, Peng-Fei; Bo, Tao; Yin, Wen; Eriksson, Olle; Zhao, Jijun; Wang, Fangwei

2018-05-09

Two-dimensional (2D) boron has been predicted to show superconductivity. However, intrinsic 2D carbon and phosphorus have not been reported to be superconductors, which has inspired us to study the superconductivity of their mixture. Here we performed first-principles calculations for the electronic structure, phonon dispersion, and electron-phonon coupling of the metallic phosphorus carbide monolayer, β0-PC. The results show that it is an intrinsic phonon-mediated superconductor, with an estimated superconducting temperature Tc of ∼13 K. The main contribution to the electron-phonon coupling is from the out-of-plane vibrations of phosphorus. A Kohn anomaly on the first acoustic branch is observed. The superconducting related physical quantities are found to be tunable by applying strain or by carrier doping.

Study of high resistance inorganic coatings on graphite fibers. [for graphite-epoxy composite materials

NASA Technical Reports Server (NTRS)

Galasso, F. S.; Veltri, R. D.; Scola, D. A.

1979-01-01

Coatings made of boron, silicon carbide, silica, and silica-like materials were studied to determine their ability to increase resistance of graphite fibers. The most promising results were attained by chemical vapor depositing silicon carbide on graphite fiber followed by oxidation, and drawing graphite fiber through ethyl silicate followed by appropriate heat treatments. In the silicon carbide coating studies, no degradation of the graphite fibers was observed and resistance values as high as three orders of magnitude higher than that of the uncoated fiber was attained. The strength of a composite fabricated from the coated fiber had a strength which compared favorably with those of composites prepared from uncoated fiber. For the silica-like coated fiber prepared by drawing the graphite fiber through an ethyl silicate solution followed by heating, coated fiber resistances about an order of magnitude greater than that of the uncoated fiber were attained. Composites prepared using these fibers had flexural strengths comparable with those prepared using uncoated fibers, but the shear strengths were lower.

Carbide and carbonitride surface treatment method for refractory metals

DOEpatents

Meyer, Glenn A.; Schildbach, Marcus A.

1996-01-01

A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system (10) including a reaction chamber (14), a source of elemental carbon (17), a heating subassembly (20) and a source of reaction gases (23). Alternative methods of providing the elemental carbon (17) and the reaction gases (23) are provided, as well as methods of supporting the metal part (12), evacuating the chamber (14) with a vacuum subassembly (18) and heating all of the components to the desired temperature.

Dynamic response of laser ablative shock waves from coated and uncoated amorphous Boron nanoparticles

NASA Astrophysics Data System (ADS)

Paturi, Prem Kiran; Chelikani, Leela; Pinnoju, Venkateshwarlu; Verma, Pankaj; Singh, Raja V.; Acrhem Collaboration; Hemrl Collaboration

2015-06-01

Nanoparticles (NP) improve the performance of solid rocket motors with increased burning rate and lower ignition threshold owing to their larger surface area. We present spatio-temporal evolution of laser ablative shock waves (LASWs) from compacted amorphous Boron (B) and Lithium Fluoride coated Boron (LiF-B) of 70-110nm sizes that were compacted to form pellets. Thickness of the LiF coating is 5.5 +/- 1 nm in LiF-B. Laser pulses from second harmonic of Nd:YAG laser (532 nm, 7 ns) are used to generate LASWs expanding in ambient air. The precise time of energy release from the pellets under extreme ablative pressures is studied using shadowgraphy with a temporal resolution of 1.5 ns. Different nature of the shock front (SF) following Sedov-Taylor theory, before and after detachment, indicated two specific time dependent stages of energy release. From the position of SF, velocity behind the SF, similar to that of exhaust velocity is measured. Specific impulse of 241 +/- 5 and 201 +/- 4 sec for LiF-B and B, respectively, at a delay of 0.8 μs from shock inducing laser pulse makes them potential candidates for laser based micro thruster applications. The work is supported by Defence Research and Developement Organization, India through Grants-in-Aid Program.

Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katamune, Yūki, E-mail: yuki-katamune@kyudai.jp; Takeichi, Satoshi; Ohmagari, Shinya

2015-11-15

Boron-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with a boron-blended graphite target at a base pressure of <10{sup −3} Pa and at hydrogen pressures of ≤53.3 Pa. The hydrogenation effects on the electrical properties of the films were investigated in terms of chemical bonding. Hydrogen-scattering spectrometry showed that the maximum hydrogen content was 35 at. % for the film produced at 53.3-Pa hydrogen pressure. The Fourier-transform infrared spectra showed strong absorptions by sp{sup 3} C–H bonds, which were specific to the UNCD/a-C:H, and can be attributed to hydrogen atoms terminating the dangling bondsmore » at ultrananocrystalline diamond grain boundaries. Temperature-dependence of the electrical conductivity showed that the films changed from semimetallic to semiconducting with increasing hydrogen pressure, i.e., with enhanced hydrogenation, probably due to hydrogenation suppressing the formation of graphitic bonds, which are a source of carriers. Carrier transport in semiconducting hydrogenated films can be explained by a variable-range hopping model. The rectifying action of heterojunctions comprising the hydrogenated films and n-type Si substrates implies carrier transport in tunneling.« less

Study of sintering temperature on the structure of silicon carbide membrane

NASA Astrophysics Data System (ADS)

Sadighzadeh, A.; Mashayekhan, Sh.; Nedaie, B.; Ghorashi, A. H.

2014-09-01

Study of the microstructure of silicon carbide (SiC) membrane as a function of sintering temperature and the percentage amount of additive kaolin is the outcome of the experimental fabrications presented in this paper. The SEM micrographs are used to investigate the impact of above parameters on the porosity of membrane. The experimental results show that the rise in the temperature causes more sintering of powder particles, growing granules, augmentation of the number of pores and consequently increasing the total porosity of membrane. Using XRD analyses, it is found that SiC amorphous phase is highly sensitive to the temperature and its crystallization physically grows with temperature increase.

Bimetal catalysts

DOEpatents

Ng, K. Y. Simon; Salley, Steve O.; Wang, Huali

2017-10-03

A catalyst comprises a carbide or nitride of a metal and a promoter element. The metal is selected from the group consisting of Mo, W, Co, Fe, Rh or Mn, and the promoter element is selected from the group consisting of Ni, Co, Al, Si, S or P, provided that the metal and the promoter element are different. The catalyst also comprises a mesoporous support having a surface area of at least about 170 m.sup.2 g.sup.-1, wherein the carbide or nitride of the metal and the promoter element is supported by the mesoporous support, and is in a non-sulfided form and in an amorphous form.

Thin films deposited by femtosecond pulsed laser ablation of tungsten carbide

NASA Astrophysics Data System (ADS)

De Bonis, A.; Teghil, R.; Santagata, A.; Galasso, A.; Rau, J. V.

2012-09-01

Ultra-short Pulsed Laser Deposition has been applied to the production of thin films from a tungsten carbide target. The gaseous phase obtained by the laser ablation shows a very weak primary plume, in contrast with a very strong secondary one. The deposited films, investigated by Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction, present a mixture of WC and other phases with lower carbon content. All films are amorphous, independently from the substrate temperature. The characteristics of the deposits have been explained in terms of thermal evaporation and cooling rate of molten particles ejected from the target.

Formation of uranium and cerium nitrides by the reaction of carbides with NH 3 and N 2/H 2 stream

NASA Astrophysics Data System (ADS)

Nakagawa, Takashi; Matsuoka, Hirotaka; Sawa, Masaji; Hirota, Masayuki; Miyake, Masanobu; Katsura, Masahiro

1997-08-01

UC or CeC 2 were converted into U 2N 3 or CeN by the use of NH 3 or an N 2/H 2 gas mixture. A stream of NH 3 works not only as a nitriding agent but also as a carbon clearing agent due to its high nitriding and hydriding activities. When the carbide is converted into nitride, carbon is liberated. Some experiments were performed in order to examine the role of the carbon activity of carbon materials (amorphous carbon or graphite) in the formation of CH 4.

Correlations between properties and applications of the CVD amorphous silicon carbide films

NASA Astrophysics Data System (ADS)

Kleps, Irina; Angelescu, Anca

2001-12-01

The aim of this paper is to emphasise the correlation between film preparation conditions, film properties and their applications. Low pressure chemical vapour deposition amorphous silicon carbide (a-SiC) and silicon carbonitride (SiCN) films obtained from liquid precursors have different structure and composition depending on deposition conditions. Thus, the films deposited under kinetic working conditions reveal a stable structure and composition. Deposition at moderate temperature leads to stoichiometric SiC, while the films deposited at high temperatures have a composition closer to Si 1- xC x, with x=0.75. These films form a very reactive interface with metallic layers. The films realised under kinetic working regime can be used in Si membrane fabrication process or as coating films for field emission applications. SiC layers field emission properties were investigated; the field emission current density of the a-SiC/Si structures was 2.4 mA/cm 2 at 25 V/μm. An Si membrane technology based on moderate temperatures (770-850 °C) a-SiC etching mask is presented.

Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

NASA Astrophysics Data System (ADS)

Alcinkaya, Burak; Sel, Kivanc

2018-01-01

The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

Surface modification of Ti alloy by electro-explosive alloying and electron-beam treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gromov, Victor, E-mail: gromov@physics.sibsiu.ru; Kobzareva, Tatiana, E-mail: kobzarevatanya@mail.ru; Budovskikh, Evgeniy, E-mail: budovskih-ea@physics.sibsiu.ru

2016-01-15

By methods of modern physical metallurgy the analysis of structure phase states of titanium alloy VT6 is carried out after electric explosion alloying with boron carbide and subsequent irradiation by pulsed electron beam. The formation of an electro-explosive alloying zone of a thickness up to 50 µm, having a gradient structure, characterized by decrease in the concentration of carbon and boron with increasing distance to the treatable surface has been revealed. Subsequent electron-beam treatment of alloying zone leads to smoothing of the alloying area surface and is accompanied by the multilayer structure formation at the depth of 30 µm withmore » alternating layers with different alloying degrees having the structure of submicro - and nanoscale level.« less

Surface modification by carbon ion implantation for the application of ni-based amorphous alloys as bipolar plate in proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Kim, Min-Uk; Kim, Do-Hyang; Han, Seung-hee; Fleury, Eric; Seok, Hyun-Kwang; Cha, Pil-Ryung; Kim, Yu-Chan

2011-04-01

Ni-based amorphous alloys with surface modification by carbon ion implantation are proposed as an alternative bipolar plate material for polymer electrolyte membrane fuel cells (PEMFCs). Both Ni60Nb20Ti10Zr10 alloys with and without carbon ion implantation have corrosion resistance as good as graphite as well as much lower contact resistance than 316L stainless steel in the PEMFC environment. The formation of conductive surface carbide due to carbon ion implantation results in a decrease in the contact resistance to a level comparable to that of graphite. This combination of excellent properties indicates that carbon ion implanted Ni-based amorphous alloys can be potential candidate materials for bipolar plates in PEMFCs.

Aircraft Survivability. Spring 2007

DTIC Science & Technology

2007-01-01

mentors who introduced him to the world of live fire testing and allowed him to “cut his teeth in vulnerability.” Of particular importance was the late...that were chosen to proceed into Phase II contracts are Excera Materials Group, Inc. of Columbus, OH; American Technical Coatings , Inc. of Cleveland...applications. (See Figure 2.) The armor variant of ONNEX technology, the BlueStar™ system, is a multi-phase material that comprises boron carbide

In Vitro Toxicity of Aluminum Nanoparticles in Rat Alveolar Macrophages

DTIC Science & Technology

2006-03-01

example, carbon nanotubes can carry more current density than any metal, as high as 1000 times the current density of copper (Kuennen, 2004...applications in defense, aerospace and automotive industries. Composites such as carbon, boron and silicon carbide are used to reinforce aluminum...carbon nanomaterials such as single–walled nanotubes , multi-walled nanotubes and fullerene on AM. 2.5.1 Macrophage Role In Immunity These immune

A Weibull characterization for tensile fracture of multicomponent brittle fibers

NASA Technical Reports Server (NTRS)

Barrows, R. G.

1977-01-01

A statistical characterization for multicomponent brittle fibers in presented. The method, which is an extension of usual Weibull distribution procedures, statistically considers the components making up a fiber (e.g., substrate, sheath, and surface) as separate entities and taken together as in a fiber. Tensile data for silicon carbide fiber and for an experimental carbon-boron alloy fiber are evaluated in terms of the proposed multicomponent Weibull characterization.

New possibilities using additive manufacturing with materials that are difficult to process and with complex structures

NASA Astrophysics Data System (ADS)

Olsson, Anders; Hellsing, Maja S.; Rennie, Adrian R.

2017-05-01

Additive manufacturing (or 3D printing) opens the possibility of creating new designs and manufacturing objects with new materials rapidly and economically. Particularly for use with polymers and polymer composites, simple printers can make high quality products, and these can be produced easily in offices, schools and in workshops and laboratories. This technology has opened a route for many to test ideas or to make custom devices. It is possible to easily manufacture complex geometries that would be difficult or even impossible to create with traditional methods. Naturally this technology has attracted attention in many fields that include the production of medical devices and prostheses, mechanical engineering as well as basic sciences. Materials that are highly problematic to machine can be used. We illustrate process developments with an account of the production of printer parts to cope with polymer fillers that are hard and abrasive; new nozzles with ruby inserts designed for such materials are durable and can be used to print boron carbide composites. As with other materials, complex parts can be printed using boron carbide composites with fine structures, such as screw threads and labels to identify materials. General ideas about design for this new era of manufacturing customised parts are presented.

Characterizing the Effect of Laser Power on Laser Metal Deposited Titanium Alloy and Boron Carbide

NASA Astrophysics Data System (ADS)

Akinlabi, E. T.; Erinosho, M. F.

2017-11-01

Titanium alloy has gained acceptance in the aerospace, marine, chemical, and other related industries due to its excellent combination of mechanical and corrosion properties. In order to augment its properties, a hard ceramic, boron carbide has been laser cladded with it at varying laser powers between 0.8 and 2.4 kW. This paper presents the effect of laser power on the laser deposited Ti6Al4V-B4C composites through the evolving microstructures and microhardness. The microstructures of the composites exhibit the formation of α-Ti phase and β-Ti phase and were elongated towards the heat affected zone. These phases were terminated at the fusion zone and globular microstructures were found growing epitaxially just immediately after the fusion zone. Good bondings were formed in all the deposited composites. Sample A1 deposited at a laser power of 0.8 kW and scanning speed of 1 m/min exhibits the highest hardness of HV 432 ± 27, while sample A4 deposited at a laser power of 2.0 kW and scanning speed of 1 m/min displays the lowest hardness of HV 360 ± 18. From the hardness results obtained, ceramic B4C has improved the mechanical properties of the primary alloy.

FTIR study of silicon carbide amorphization by heavy ion irradiations

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier

2017-03-01

We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C-SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C-SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

Structural and electrical properties of trimethylboron-doped silicon nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lew, K.-K.; Pan Ling; Bogart, Timothy E.

2004-10-11

Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B{sub 2}H{sub 6}) sources. Boron concentrations ranging from 1x10{sup 18} to 4x10{sup 19} cm{sup -3} were obtained by varying the inlet dopant/SiH{sub 4} gas ratio. TEM characterization revealed that the B{sub 2}H{sub 6}-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. Themore » difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B{sub 2}H{sub 6}. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.« less

High-pressure, high-temperature synthesis of superhard boron suboxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hubert, H.; Garvie, L.A.J.; Leinenweber, K.

A multianvil device was used to investigate the formation of B{sub x}O phases produced in the 2 to 10 GPa pressure range with temperatures between 1,000 and 1,800 C. Amorphous and crystalline B and BP were oxidized using B{sub 2}O{sub 3} and CrO{sub 3}. Using powder X-ray diffraction and parallel electron energy-loss spectroscopy (PEELS), the authors were unable to detect graphitic or diamond-structured B{sub 2}O, reported in previous studies. The refractory boride B{sub 6}O, which has the {alpha}-rhombohedral boron structure, is the dominant suboxide in the P and T range of the investigation. PEELS with a transmission electron microscope wasmore » used to characterize the boron oxides.« less

Tribological properties of boron nitride synthesized by ion beam deposition

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.; Spalvins, T.

1985-01-01

The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

Ceramic fibers from Si-B-C polymer precursors

NASA Technical Reports Server (NTRS)

Riccitiello, S. R.; Hsu, M. S.; Chen, T. S.

1993-01-01

Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (Si3N4), and silicon borides (SiB4, SiB6) have thermal stability, oxidation resistance, hardness, and varied electrical properties. All these materials can be prepared in a fiber form from a suitable polymer precursor. The above mentioned fibers, when tested over a temperature range from 25 to 1400 C, experience degradation at elevated temperatures. Past work in ceramic materials has shown that the strength of ceramics containing both carbides and borides is sustained at elevated temperatures, with minimum oxidation. The work presented here describes the formation of ceramic fibers containing both elements, boron and silicon, prepared via the polymer precursor route previously reported by the authors, and discusses the fiber mechanical properties that are retained over the temperature range studied.

Iron-Based Amorphous Metals: High-Performance Corrosion-Resistant Material Development

NASA Astrophysics Data System (ADS)

Farmer, Joseph; Choi, Jor-Shan; Saw, Cheng; Haslam, Jeffrey; Day, Dan; Hailey, Phillip; Lian, Tiangan; Rebak, Raul; Perepezko, John; Payer, Joe; Branagan, Daniel; Beardsley, Brad; D'Amato, Andy; Aprigliano, Lou

2009-06-01

An overview of the High-Performance Corrosion-Resistant Materials (HPCRM) Program, which was cosponsored by the Defense Advanced Research Projects Agency (DARPA) Defense Sciences Office (DSO) and the U.S. Department of Energy (DOE) Office of Civilian and Radioactive Waste Management (OCRWM), is discussed. Programmatic investigations have included a broad range of topics: alloy design and composition, materials synthesis, thermal stability, corrosion resistance, environmental cracking, mechanical properties, damage tolerance, radiation effects, and important potential applications. Amorphous alloys identified as SAM2X5 (Fe49.7Cr17.7Mn1.9Mo7.4W1.6B15.2C3.8Si2.4) and SAM1651 (Fe48Mo14Cr15Y2C15B6) have been produced as meltspun ribbons (MSRs), dropcast ingots, and thermal-spray coatings. Chromium (Cr), molybdenum (Mo), and tungsten (W) additions provided corrosion resistance, while boron (B) enabled glass formation. Earlier electrochemical studies of MSRs and ingots of these amorphous alloys demonstrated outstanding passive film stability. More recently, thermal-spray coatings of these amorphous alloys have been made and subjected to long-term salt-fog and immersion tests; good corrosion resistance has been observed during salt-fog testing. Corrosion rates were measured in situ with linear polarization, while the open-circuit corrosion potentials (OCPs) were simultaneously monitored; reasonably good performance was observed. The sensitivity of these measurements to electrolyte composition and temperature was determined. The high boron content of this particular amorphous metal makes this amorphous alloy an effective neutron absorber and suitable for criticality-control applications. In general, the corrosion resistance of such iron-based amorphous metals is maintained at operating temperatures up to the glass transition temperature. These materials are much harder than conventional stainless steel and Ni-based materials, and are proving to have excellent wear properties, sufficient to warrant their use in earth excavation, drilling, and tunnel-boring applications. Large areas have been successfully coated with these materials, with thicknesses of approximately 1 cm. The observed corrosion resistance may enable applications of importance in industries such as oil and gas production, refining, nuclear power generation, shipping, etc.

Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jimenez, I.; Jankowski, A.F.; Terminello, L.J.

1997-04-01

Boron nitride is an interesting material for technological applications and for fundamental solid state physics investigations. It is a compound isoelectronic with carbon and, like carbon can possess sp{sup 2} and sp{sup 3} bonded phases resembling graphite and diamond. BN crystallizes in the sp{sup 2}-bonded hexagonal (h-BN), rhombohedral (r-BN) and turbostratic phases, and in the sp{sup 3}-bonded cubic (c-BN) and wurtzite (w-BN) phases. A new family of materials is obtained when replacing C-C pairs in graphite with isoelectronic B-N pairs, resulting in C{sub 2}BN compounds. Regarding other boron compounds, BN is exceptional in the sense that it has standard two-centermore » bonds with conventional coordination numbers, while other boron compounds (e.g. B{sub 4}C) are based on the boron icosahedron unit with three-center bonds and high coordination numbers. The existence of several allotropic forms and fullerene-like structures for BN suggests a rich variety of local bonding and poses the questions of how this affects the local electronic structure and how the material accommodates the stress induced in the transition regions between different phases. One would expect point defects to play a crucial role in stress accommodation, but these must also have a strong influence in the electronic structure, since the B-N bond is polar and a point defect will thus be a charged structure. The study of point defects in relationship to the electronic structure is of fundamental interest in these materials. Recently, the authors have shown that Near-Edge X-ray Absorption Fine Structure (NEXAFS) is sensitive to point defects in h-BN, and to the formation of metastable phases even in amorphous materials. This is significant since other phase identification techniques like vibrational spectroscopies or x-ray diffraction yield ambiguous results for nanocrystalline and amorphous samples. Serendipitously, NEXAFS also combines chemical selectivity with point defect sensitivity.« less

A Soluble Dynamic Complex Strategy for the Solution-Processed Fabrication of Organic Thin-Film Transistors of a Boron-Containing Polycyclic Aromatic Hydrocarbon.

PubMed

Matsuo, Kyohei; Saito, Shohei; Yamaguchi, Shigehiro

2016-09-19

The solution-processed fabrication of thin films of organic semiconductors enables the production of cost-effective, large-area organic electronic devices under mild conditions. The formation/dissociation of a dynamic B-N coordination bond can be used for the solution-processed fabrication of semiconducting films of polycyclic aromatic hydrocarbon (PAH) materials. The poor solubility of a boron-containing PAH in chloroform, toluene, and chlorobenzene was significantly improved by addition of minor amounts (1 wt % of solvent) of pyridine derivatives, as their coordination to the boron atom suppresses the inherent propensity of the PAHs to form π-stacks. Spin-coating solutions of the thus formed Lewis acid-base complexes resulted in the formation of amorphous thin films, which could be converted into polycrystalline films of the boron-containing PAH upon thermal annealing. Organic thin-film transistors prepared by this solution process displayed typical p-type characteristics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, P.E.D.; Pugar, E.A.

1985-11-12

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

New generation of plasma-sprayed mullite coatings on silicon carbide

NASA Technical Reports Server (NTRS)

Lee, Kang N.; Miller, Robert A.; Jacobson, Nathan S.

1995-01-01

Mullite is promising as a protective coating for silicon-based ceramics in aggressive high-temperature environments. Conventionally plasma-sprayed mullite on SiC tends to crack and debond on thermal cycling. It is shown that this behavior is due to the presence of amorphous mullite in the conventionally sprayed mullite. Heating the SiC substrate during the plasma spraying eliminated the amorphous phase and produced coatings with dramatically improved properties. The new coating exhibits excellent adherence and crack resistance under thermal cycling between room temperature and 1000 to 1400 C. Preliminary tests showed good resistance to Na2CO3-induced hot corrosion.

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, Peter E. D.; Pugar, Eloise A.

1985-01-01

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

Overview of Materials R&D at Oak Ridge National Laboratory

DTIC Science & Technology

2010-08-23

Titanium - 6Al - 4V 970 1.5 Boron Carbide (B4C) 350-550 (Flexural) 3.0+ Longstanding Achievements in Ceramic Science and Development 23 Baseline...Powders Front and back of V50-tested vacuum- hot-pressed Ti- 6Al - 4V • Oak Ridge National Laboratory Is Collaborating with Industry to Develop...Present and future growth areas – Lightweight materials ( titanium , magnesium, aluminum, carbon fibers and composites) with superior properties

Doped Boron Carbide-Based Polymers: Fundamental Studies of a Novel Class of Materials for Enhanced Neutron Detection

DTIC Science & Technology

2016-03-01

CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR( S ) 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT...NUMBER 7. PERFORMING ORGANIZATION NAME( S ) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER 9...SPONSORING / MONITORING AGENCY NAME( S ) AND ADDRESS(ES) 10. SPONSOR/MONITOR’S ACRONYM( S ) 11. SPONSOR/MONITOR’S REPORT NUMBER( S ) 12

Boron Carbide Aluminum Cermets for External Pressure Housing Applications

DTIC Science & Technology

1992-09-01

CHEMISTRY AND MICROSTRUCTURES OF THE B4C/Al SYSTEM ......................................... 4 3.2 MECHANICAL PROPERTIES OF B4C/AI COMPOSITES ....... 10...TABLES 1. Phase chemistry of B4C/A1 composites as a function of baking temperature (by stereology) .................. ...... 10 2. Summary of the...diffractometer using CuKo radiation and a scan rate of 2° per minute. The chemistry of all phases was determined from electron microprobe analysis of

Method of making a composite refractory material

DOEpatents

Morrow, Marvin S.; Holcombe, Cressie E.

1995-01-01

A composite refractory material is prepared by combining boron carbide with furan resin to form a mixture containing about 8 wt. % furan resin. The mixture is formed into a pellet which is placed into a grit pack comprising an oxide of an element such as yttrium to form a sinterable body. The sinterable body is sintered under vacuum with microwave energy at a temperature no greater than 2000.degree. C. to form a composite refractory material.

Method of making a composite refractory material

DOEpatents

Morrow, M.S.; Holcombe, C.E.

1995-09-26

A composite refractory material is prepared by combining boron carbide with furan resin to form a mixture containing about 8 wt. % furan resin. The mixture is formed into a pellet which is placed into a grit pack comprising an oxide of an element such as yttrium to form a sinterable body. The sinterable body is sintered under vacuum with microwave energy at a temperature no greater than 2000 C to form a composite refractory material.

Researches on tungsten carbide

NASA Astrophysics Data System (ADS)

1994-11-01

This paper summarizes results of the researches on tungsten carbide (WC), carried out in the 5-year period starting 1989 by the Science and Technology Agency's National Institute for Researches in Inorganic Materials. The high-frequency heating, floating zone technique, generally suited for growth of large-size, single crystals of high melting materials, is inapplicable to the hexagonal WC system, which is decomposed. This problem has been solved by adding boron to the system, to allow it to exist with the W-C-B melt at an equilibrium. The computer-aided control techniques have enabled automatic growth of the single crystals of carbides and borides. The de Haas-Van Alphen effect of the single WC crystals has been observed, to establish the Fermi surface model. The single crystals of transition metal carbides, such as WC, have been coated with the monolayer of graphite at high repeatability, to create the surface layer materials. An attempt has been done to produce the halite type structure by substituting Ti as the atom in the outermost layer of TiC by W. The new method, based on the low-speed deuterium ion scattering, has been developed to analyze the surface bonding conditions, clarifying the conditions of alkalis adsorbed on and bonded to metallic surfaces, and their surface reactivities.

Fe-Based Amorphous Coatings on AISI 4130 Structural Steel for Corrosion Resistance

NASA Astrophysics Data System (ADS)

Katakam, Shravana; Santhanakrishnan, S.; Dahotre, Narendra B.

2012-06-01

The current study focuses on synthesizing a novel functional coating for corrosion resistance applications, via laser surface alloying. The iron-based (Fe48Cr15Mo14Y2C15B) amorphous precursor powder is used for laser surface alloying on AISI 4130 steel substrate, with a continuous wave ytterbium Nd-YAG fiber laser. The corrosion resistance of the coatings is evaluated for different processing conditions. The microstructural evolution and the response of the microstructure to the corrosive environment is studied using x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Microstructural studies indicate the presence of face-centered cubic Fe-based dendrites intermixed within an amorphous matrix along with fine crystalline precipitates. The corrosion resistance of the coatings decrease with an increase in laser energy density, which is attributed to the precipitation and growth of chromium carbide. The enhanced corrosion resistance of the coatings processed with low energy density is attributed to the self-healing mechanism of this amorphous system.

Role of pre-existing point defects on primary damage production and amorphization in silicon carbide (β-SiC)

NASA Astrophysics Data System (ADS)

Sahoo, Deepak Ranjan; Szlufarska, Izabela; Morgan, Dane; Swaminathan, Narasimhan

2018-01-01

Molecular dynamics simulations of displacement cascades were conducted to study the effect of point defects on the primary damage production in β-SiC. Although all types of point defects and Frenkel pairs were considered, Si interstitials and Si Frenkel pairs were unstable and hence excluded from the cascade studies. Si (C) vacancies had the maximum influence, enhancing C (Si) antisites and suppressing C interstitial production, when compared to the sample without any defects. The intracascade recombination mechanisms, in the presence of pre-existing defects, is explored by examining the evolution of point defects during the cascade. To ascertain the role of the unstable Si defects on amorphization, simulations involving explicit displacements of Si atoms were conducted. The dose to amorphization with only Si displacements was much lower than what was observed with only C displacements. The release of elastic energy accumulated due to Si defects, is found to be the amorphizing mechanism.

Fabrication and characterization of poly (bisphenol A borate) with high thermal stability

NASA Astrophysics Data System (ADS)

Wang, Shujuan; Wang, Xiao; Jia, Beibei; Jing, Xinli

2017-01-01

In this work, poly (bisphenol A borate) (PBAB), which has excellent thermal resistance and a high char yield, was synthesized via a convenient A2 + B3 strategy by using bisphenol A (BPA) and boric acid (BA). The chemical reaction between BPA and BA and the chemical structure of PBAB were investigated. The results demonstrate that PBAB consists of aromatic, Ph-O-B and B-O-B structures, as well as a small number of boron hydroxyl groups and phenolic hydroxyl groups. The thermal properties of PBAB were studied by DMA and TGA. The results indicate that the glass transition temperature and char yield are gradually enhanced by increasing the boron content, where the char yield of PBAB at 800 °C in nitrogen (N2) reaches up to 71.3%. It is of particular importance that PBAB show excellent thermal resistance in N2 and air atmospheres. By analysing the pyrolysis of PBAB, the high char yield of PBAB can be attributed to the formation of boron oxide and boron carbide at high temperatures, which reduced the release of volatile carbon dioxide and improved the thermal stability of the carbonization products. This study provides a new perspective on the design of novel boron-containing polymers and possesses significant potential for the improvement of the comprehensive performance of thermosetting resins to broaden their applicability in the field of advanced composites.

Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

NASA Technical Reports Server (NTRS)

Manasevit, H. M.

1988-01-01

Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

Magnetron-Sputtered Amorphous Metallic Coatings

NASA Technical Reports Server (NTRS)

Thakoor, A. P.; Mehra, M.; Khanna, S. K.

1985-01-01

Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

Whispering gallery modes in a spherical microcavity with a photoluminescent shell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grudinkin, S. A., E-mail: grudink@gvg.ioffe.ru; Dontsov, A. A.; Feoktistov, N. A.

2015-10-15

Whispering-gallery mode spectra in optical microcavities based on spherical silica particles coated with a thin photoluminescent shell of hydrogenated amorphous silicon carbide are studied. The spectral positions of the whispering-gallery modes for spherical microcavities with a shell are calculated. The dependence of the spectral distance between the TE and TM modes on the shell thickness is examined.

In vivo Characterization of Amorphous Silicon Carbide As a Biomaterial for Chronic Neural Interfaces

PubMed Central

Knaack, Gretchen L.; McHail, Daniel G.; Borda, German; Koo, Beomseo; Peixoto, Nathalia; Cogan, Stuart F.; Dumas, Theodore C.; Pancrazio, Joseph J.

2016-01-01

Implantable microelectrode arrays (MEAs) offer clinical promise for prosthetic devices by enabling restoration of communication and control of artificial limbs. While proof-of-concept recordings from MEAs have been promising, work in animal models demonstrates that the obtained signals degrade over time. Both material robustness and tissue response are acknowledged to have a role in device lifetime. Amorphous Silicon carbide (a-SiC), a robust material that is corrosion resistant, has emerged as an alternative encapsulation layer for implantable devices. We systematically examined the impact of a-SiC coating on Si probes by immunohistochemical characterization of key markers implicated in tissue-device response. After implantation, we performed device capture immunohistochemical labeling of neurons, astrocytes, and activated microglia/macrophages after 4 and 8 weeks of implantation. Neuron loss and microglia activation were similar between Si and a-SiC coated probes, while tissue implanted with a-SiC displayed a reduction in astrocytes adjacent to the probe. These results suggest that a-SiC has a similar biocompatibility profile as Si, and may be suitable for implantable MEA applications as a hermetic coating to prevent material degradation. PMID:27445672

In vivo Characterization of Amorphous Silicon Carbide As a Biomaterial for Chronic Neural Interfaces.

PubMed

Knaack, Gretchen L; McHail, Daniel G; Borda, German; Koo, Beomseo; Peixoto, Nathalia; Cogan, Stuart F; Dumas, Theodore C; Pancrazio, Joseph J

2016-01-01

Implantable microelectrode arrays (MEAs) offer clinical promise for prosthetic devices by enabling restoration of communication and control of artificial limbs. While proof-of-concept recordings from MEAs have been promising, work in animal models demonstrates that the obtained signals degrade over time. Both material robustness and tissue response are acknowledged to have a role in device lifetime. Amorphous Silicon carbide (a-SiC), a robust material that is corrosion resistant, has emerged as an alternative encapsulation layer for implantable devices. We systematically examined the impact of a-SiC coating on Si probes by immunohistochemical characterization of key markers implicated in tissue-device response. After implantation, we performed device capture immunohistochemical labeling of neurons, astrocytes, and activated microglia/macrophages after 4 and 8 weeks of implantation. Neuron loss and microglia activation were similar between Si and a-SiC coated probes, while tissue implanted with a-SiC displayed a reduction in astrocytes adjacent to the probe. These results suggest that a-SiC has a similar biocompatibility profile as Si, and may be suitable for implantable MEA applications as a hermetic coating to prevent material degradation.

Biocompatibility of Hydrogen-Diluted Amorphous Silicon Carbide Thin Films for Artificial Heart Valve Coating

NASA Astrophysics Data System (ADS)

Rizal, Umesh; Swain, Bhabani S.; Rameshbabu, N.; Swain, Bibhu P.

2018-01-01

Amorphous silicon carbide (a-SiC:H) thin films were synthesized using trichloromethylsilane by a hot wire chemical vapor deposition process. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy to confirm its chemical bonding, structural network and composition of the a-SiC:H films. The optical microscopy images reveal that hydrogen dilution increased the surface roughness and pore density of a-SiC:H thin film. The Raman spectroscopy and FTIR spectra reveal chemical network consisting of Si-Si, C-C and Si-C bonds, respectively. The XRD spectroscopy and Raman spectroscopy indicate a-SiC:H still has short-range order. In addition, in vitro cytotoxicity test ensures the behavior of cell-semiconductor hybrid to monitor the proper coordination. The live-dead assays and MTT assay reveal an increase in green nucleus cell, and cell viability is greater than 88%, respectively, showing non-toxic nature of prepared a-SiC:H film. Moreover, the result indicated by direct contact assay, and cell prefers to adhere and proliferate on a-SiC:H thin films having a positive effect as artificial heart valve coating material.

Boron removal from hydraulic fracturing wastewater by aluminum and iron coagulation: Mechanisms and limitations.

PubMed

Chorghe, Darpan; Sari, Mutiara Ayu; Chellam, Shankararaman

2017-12-01

One promising water management strategy during hydraulic fracturing is treatment and reuse of flowback/produced water. In particular, the saline flowback water contains many of the chemicals employed for fracking, which need to be removed before possible reuse as "frac water." This manuscript targets turbidity along with one of the additives; borate-based cross-linkers used to adjust the rheological characteristics of the frac-fluid. Alum and ferric chloride were evaluated as coagulants for clarification and boron removal from saline flowback water obtained from a well in the Eagle Ford shale. Extremely high dosages (> 9000 mg/L or 333 mM Al and 160 mM Fe) corresponding to Al/B and Fe/B mass ratios of ∼70 and molar ratios of ∼28 and 13 respectively were necessary to remove ∼80% boron. Hence, coagulation does not appear to be feasible for boron removal from high-strength waste streams. X-ray photoelectron spectroscopy revealed BO bonding on surfaces of freshly precipitated Al(OH) 3 (am) and Fe(OH) 3 (am) suggesting boron uptake was predominantly via ligand exchange. Attenuated total reflection-Fourier transform infrared spectroscopy provided direct evidence of inner-sphere boron complexation with surface hydroxyl groups on both amorphous aluminum and iron hydroxides. Only trigonal boron was detected on aluminum flocs since possible presence of tetrahedral boron was masked by severe AlO interferences. Both trigonal and tetrahedral conformation of boron complexes were identified on Fe(OH) 3 surfaces. Copyright © 2017 Elsevier Ltd. All rights reserved.

Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

NASA Astrophysics Data System (ADS)

Harmatha, Ladislav; Mikolášek, Miroslav; Stuchlíková, L'ubica; Kósa, Arpád; Žiška, Milan; Hrubčín, Ladislav; Skuratov, Vladimir A.

2015-11-01

The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm-2 to 5 × 1010 cm-2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Room-temperature Electrochemical Synthesis of Carbide-derived Carbons and Related Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gogotsi, Yury

2015-02-28

This project addresses room-temperature electrochemical etching as an energy-efficient route to synthesis of 3D nanoporous carbon networks and layered 2D carbons and related structures, as well as provides fundamental understanding of structure and properties of materials produced by this method. Carbide-derived-carbons (CDCs) are a growing class of nanostructured carbon materials with properties that are desirable for many applications, such as electrical energy and gas storage. The structure of these functional materials is tunable by the choice of the starting carbide precursor, synthesis method, and process parameters. Moving from high-temperature synthesis of CDCs through vacuum decomposition above 1400°C and chlorination abovemore » 400°C, our studies under the previous DOE BES support led to identification of precursor materials and processing conditions for CDC synthesis at temperatures as low as 200°C, resulting in amorphous and highly reactive porous carbons. We also investigated synthesis of monolithic CDC films from carbide films at 250-1200°C. The results of our early studies provided new insights into CDC formation, led to development of materials for capacitive energy storage, and enabled fundamental understanding of the electrolyte ions confinement in nanoporous carbons.« less

Processing of uranium oxide and silicon carbide based fuel using polymer infiltration and pyrolysis

NASA Astrophysics Data System (ADS)

Singh, Abhishek K.; Zunjarrao, Suraj C.; Singh, Raman P.

2008-09-01

Ceramic composite pellets consisting of uranium oxide, UO 2, contained within a silicon carbide matrix, were fabricated using a novel processing technique based on polymer infiltration and pyrolysis (PIP). In this process, particles of depleted uranium oxide, in the form of U 3O 8, were dispersed in liquid allylhydridopolycarbosilane (AHPCS), and subjected to pyrolysis up to 900 °C under a continuous flow of ultra high purity argon. The pyrolysis of AHPCS, at these temperatures, produced near-stoichiometric amorphous silicon carbide ( a-SiC). Multiple polymer infiltration and pyrolysis (PIP) cycles were performed to minimize open porosity and densify the silicon carbide matrix. Analytical characterization was conducted to investigate chemical interaction between U 3O 8 and SiC. It was observed that U 3O 8 reacted with AHPCS during the very first pyrolysis cycle, and was converted to UO 2. As a result, final composition of the material consisted of UO 2 particles contained in an a-SiC matrix. The physical and mechanical properties were also quantified. It is shown that this processing scheme promotes uniform distribution of uranium fuel source along with a high ceramic yield of the parent matrix.

Preparation and characterization of B4C coatings for advanced research light sources.

PubMed

Störmer, Michael; Siewert, Frank; Sinn, Harald

2016-01-01

X-ray optical elements are required for beam transport at the current and upcoming free-electron lasers and synchrotron sources. An X-ray mirror is a combination of a substrate and a coating. The demand for large mirrors with single layers consisting of light or heavy elements has increased during the last few decades; surface finishing technology is currently able to process mirror lengths up to 1 m with microroughness at the sub-nanometre level. Additionally, thin-film fabrication is able to deposit a suitable single-layer material, such as boron carbide (B4C), some tens of nanometres thick. After deposition, the mirror should provide excellent X-ray optical properties with respect to coating thickness errors, microroughness values and slope errors; thereby enabling the mirror to transport the X-ray beam with high reflectivity, high beam flux and an undistorted wavefront to an experimental station. At the European XFEL, the technical specifications of the future mirrors are extraordinarily challenging. The acceptable shape error of the mirrors is below 2 nm along the whole length of 1 m. At the Helmholtz-Zentrum Geesthacht (HZG), amorphous layers of boron carbide with thicknesses in the range 30-60 nm were fabricated using the HZG sputtering facility, which is able to cover areas up to 1500 mm long by 120 mm wide in one step using rectangular B4C sputtering targets. The available deposition area is suitable for the specified X-ray mirror dimensions of upcoming advanced research light sources such as the European XFEL. The coatings produced were investigated by means of X-ray reflectometry and interference microscopy. The experimental results for the B4C layers are discussed according to thickness uniformity, density, microroughness and thermal stability. The variation of layer thickness in the tangential and sagittal directions was investigated in order to estimate the achieved level of uniformity over the whole deposition area, which is considerably larger than the optical area of a mirror. A waisted mask was positioned during deposition between the sputtering source and substrate to improve the thickness uniformity; particularly to prevent the formation a convex film shape in the sagittal direction. Additionally the inclination of the substrate was varied to change the layer uniformity in order to optimize the position of the mirror quality deposited area during deposition. The level of mirror microroughness was investigated for different substrates before and after deposition of a single layer of B4C. The thermal stability of the B4C layers on the various substrate materials was investigated.

Preparation and characterization of B4C coatings for advanced research light sources

PubMed Central

Störmer, Michael; Siewert, Frank; Sinn, Harald

2016-01-01

X-ray optical elements are required for beam transport at the current and upcoming free-electron lasers and synchrotron sources. An X-ray mirror is a combination of a substrate and a coating. The demand for large mirrors with single layers consisting of light or heavy elements has increased during the last few decades; surface finishing technology is currently able to process mirror lengths up to 1 m with microroughness at the sub-nanometre level. Additionally, thin-film fabrication is able to deposit a suitable single-layer material, such as boron carbide (B4C), some tens of nanometres thick. After deposition, the mirror should provide excellent X-ray optical properties with respect to coating thickness errors, microroughness values and slope errors; thereby enabling the mirror to transport the X-ray beam with high reflectivity, high beam flux and an undistorted wavefront to an experimental station. At the European XFEL, the technical specifications of the future mirrors are extraordinarily challenging. The acceptable shape error of the mirrors is below 2 nm along the whole length of 1 m. At the Helmholtz-Zentrum Geesthacht (HZG), amorphous layers of boron carbide with thicknesses in the range 30–60 nm were fabricated using the HZG sputtering facility, which is able to cover areas up to 1500 mm long by 120 mm wide in one step using rectangular B4C sputtering targets. The available deposition area is suitable for the specified X-ray mirror dimensions of upcoming advanced research light sources such as the European XFEL. The coatings produced were investigated by means of X-ray reflectometry and interference microscopy. The experimental results for the B4C layers are discussed according to thickness uniformity, density, microroughness and thermal stability. The variation of layer thickness in the tangential and sagittal directions was investigated in order to estimate the achieved level of uniformity over the whole deposition area, which is considerably larger than the optical area of a mirror. A waisted mask was positioned during deposition between the sputtering source and substrate to improve the thickness uniformity; particularly to prevent the formation a convex film shape in the sagittal direction. Additionally the inclination of the substrate was varied to change the layer uniformity in order to optimize the position of the mirror quality deposited area during deposition. The level of mirror microroughness was investigated for different substrates before and after deposition of a single layer of B4C. The thermal stability of the B4C layers on the various substrate materials was investigated. PMID:26698045

Preparation of nanocrystalline TiN coated cubic boron nitride powders by a sol-gel process.

PubMed

Park, Hee S; Umer, M Adeel; Ryu, Ho J; Hong, Soon H

2011-01-01

Cubic boron nitride (cBN) particles coated with 20 wt% nanocrystalline TiN were prepared by coating the surface of cBN particles with TiO2, followed by nitridation with NH3 gas at 900 degrees C. Coating of TiO2 on cBN powders was accomplished by a sol-gel process from a solution of titanium (IV) isopropoxide and anhydrous ethanol. An amorphous TiO(x) layer of 50 nm thickness was homogenously formed on the surface of the cBN particles by the sol-gel process. The amorphous layer was then crystallized to an anatase TiO2 phase through calcination in air at 400 degrees C. The crystallized TiO2 layer was 50 nm in thickness, and the size of TiO2 particles comprising the layer was nearly 10 nm. The TiO2 on cBN surfaces was completely converted into nanocrystalline TiN of uniform particles 20 nm in size on cBN particles by nitridation under flowing NH3 gas.

Enhancements to the Tonge-Ramesh Ceramic Failure Model for Use in Eulerian Simulations

DTIC Science & Technology

2016-09-14

ability to project an arbitrary trial stress (σtr) onto the quasi -static yield surface (providing the value for σqs). Once the projection onto the quasi ...Model Evaluation Methods 4.1 Geometry from Prior Experiments There are experimental data from 2 research groups on penetration of confined boron carbide...by high-density, long-rod projectiles.21,22 Based on these prior ex- periments, the following 3 experimental geometries were identified to test the

Processing Research on Chemically Vapor Deposited Silicon Nitride

DTIC Science & Technology

1981-12-01

forming silicon carbide to reduce free silicon content. (b) Boron and aluminum were selected as two single-valence elements with small atomic radii which...obtained in cold wall (CW-3) runs were sliced into small flexure bars (19.1x3.2xt(mm) where t = thickness) if they appeared to be of suitable quality...discussed later. Addition of borcn trichloride in small amounts (Run 8) caused Formation of a light blue translucent deposit which contained at least one

Characterization of a Boron Carbide Heterojunction Neutron Detector

DTIC Science & Technology

2011-03-24

owing to a constant SRC in BC. As previously discussed, the BC is taken as fully depleted (2 μm) at all biases . The bias dependence noted in UMKC#1...sensitivity shown below 3.8 eV. A general trend also shows higher sensitivity at lower biases . For this reason, zero bias detection was not included... dependence consistent with semiconductor physics below ~ -7 V. The bias dependence that is evident in these parameters at > -7 V indicates that the

Dynamic properties of porous B sub 4 C. Interim report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brar, N.S.; Rosenberg, Z.; Bless, S.J.

1990-01-25

The sound speed in porous B4C (Boron Carbide) was measured and predicted on the basis of a spherical void model and a penny crack model. Neither model does well for porosity exceeding 10 percent. Measured values of Hugoniot elastic limit for porous B4C agree well with those predicted by the Steinberg's model. Measured transverse stress in the elastic range of B4C under 1-d strain condition agrees with the predictions.

Thermionic System Evaluation Test: Ya-21U System Topaz International Program

DTIC Science & Technology

1996-07-01

by enriched uranium dioxide (U02) fuel pellets, as illustrated by Figure 5. The work section of the converter contained 34 TFEs that provided power...power system. This feature permitted transportation of the highly enriched uranium oxide fuel in separate containers from the space power system and...by Figure 8. The radial reflector contained three safety and nine control drums. Each drum contained a section of boron carbide (B4C) neutron poison

Monte carlo simulation of innovative neutron and photon shielding material composing of high density concrete, waste rubber, lead and boron carbide

NASA Astrophysics Data System (ADS)

Aim-O, P.; Wongsawaeng, D.; Phruksarojanakun, P.; Tancharakorn, S.

2017-06-01

High-density concrete exhibits high strength and can perform an important role of gamma ray attenuation. In order to upgrade this material’s radiation-shielding performance, hydrogen-rich material can be incorporated. Waste rubber from vehicles has high hydrogen content which is the prominent characteristic to attenuate neutron. The objective of this work was to evaluate the radiation-shielding properties of this composite material against neutron and photon radiations. Monte Carlo transport simulation was conducted to simulate radiation through the composite material. Am-241/Be was utilized for neutron source and Co-60 for photon source. Parameters of the study included volume percentages of waste rubber, lead and boron carbide and thickness of the shielding material. These designs were also fabricated and the radiation shielding properties were experimentally evaluated. The best neutron and gamma ray shielding material was determined to be high-density concrete mixed with 5 vol% crumb rubber and 5 vol% lead powder. This shielding material increased the neutron attenuation by 64% and photon attenuation by 68% compared to ordinary concrete. Also, increasing the waste rubber content to greater than 5% resulted in a decrease in the radiation attenuation. This innovative composite radiation shielding material not only benefits nuclear science and engineering applications, but also helps solve the environmental issue of waste rubber.

Characterization of Thermal, Mechanical and Tribological Properties of Fluoropolymer Composite Coatings

NASA Astrophysics Data System (ADS)

He, Y.; Farokhzadeh, K.; Edrisy, A.

2017-04-01

Perfluoroalkoxy (PFA) is a potential polymer coating material for low-temperature waste heat recovery in heat exchangers. Nonetheless, poor thermal conductivity, low strength and susceptibility to surface degradation by erosion/wear pose restrictions in its application. In this study, four types of fillers, namely graphite, silicon carbide, alumina and boron nitride, were introduced to enhance the thermal, mechanical and tribological properties in PFA coatings. The thermal diffusivity and specific heat capacity of the composites (reinforced with 20 wt.% filler) were also measured using laser flash and differential scanning calorimetry techniques, respectively. The results indicated that the addition of graphite or boron nitride increased the thermal conductivity of PFA by at least 2.8 orders of magnitude, while the composites with the same weight fraction of alumina or silicon carbide showed 20-80% rise in thermal conductivity. The micromechanical deformation and tribological behavior of composite coatings, electrostatically sprayed on steel substrates, were investigated by means of instrumented indentation and scratch tests. The deformation response and friction characteristics were investigated, and the failure mechanisms were identified. Surface hardness, roughness and structure of fillers influenced the sliding performance of the composite coatings. PFA coatings filled with Al2O3 or SiC particles showed high load-bearing capacity under sliding conditions. Conversely, BN- and graphite-filled PFA coatings exhibited lower interfacial adhesion to steel substrate and were prone to failure at relatively lower applied loads.

.beta.-silicon carbide protective coating and method for fabricating same

DOEpatents

Carey, Paul G.; Thompson, Jesse B.

1994-01-01

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.

Magnetocaloric effect in amorphous and partially crystallized Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18} alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thanveer, T.; Thomas, S., E-mail: senoythomas@gmail.com; Ramanujan, R. V.

A study of magnetocaloric effect in amorphous and partially crystallized Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18} alloys is reported. Amorphous Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18}, near its magnetic ordering temperature (600 K) showed a magnetic entropy change ΔS{sub M} of 1.1 J/KgK and a relative cooling power of 36 J/Kg in a field change of 10 kOe. Amorphous samples were partially crystallized by annealing at 700 K at different time intervals. Partially crystallized samples showed two distinct magnetic ordering temperature, one corresponding to the precipitated FeNi nanocrystals and the other one corresponding to the boron rich amorphous matrix. Magnetic ordering temperaturemore » of the residual amorphous matrix got shifted to the lower temperatures on increasing the annealing duration. Partially crystallised samples showed a magnetic entropy change of about 0.27 J/kgK near the magnetic ordering temperature of the amorphous matrix (540 K) in a field change of 10 kOe. The decrease in ΔS{sub M} on partial crystallisation is attributed to the biphasic magnetic nature of the sample.« less

RESEARCH ON PHYSICAL AND CHEMICAL PRINCIPLES AFFECTING HIGH TEMPERATURE MATERIALS FOR ROCKET NOZZLES. Quarterly Progress Report, April 1, 1963-June 30, 1963

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lowrie, R.

1963-10-31

The development and properties of refractory materials are described. Corrosion of zirconium carbide, niobium carbide, and niobium carbide-zirconium carbide systems by carbon dioxide and hydrochloric acid at 2250 deg C is reported. Corrosion of silver-tungsten alloys by carbon dioxide and oxygen at 2150 to 2440 deg K is summarized. Measurements of pyrolytic and ZTA graphite corrosion by carbon dioxide and oxygen at 2100 to 2800 deg K are shown. At 2300 deg C the rate of formation of methane from graphite and hydrogen is greatly reduced by the addition of helium, at constant hydrogen pressure. Up to 2000 deg Cmore » the effect of helium is small. The pyrolysis of methane on graphite at 2000 deg C is tabulated. Oxidation of tungsten to form WO/sub 2/ and WO/sub 3/ is reported. Vaporization of hafnium borides at 2297 to 2538 deg K is analyzed. The lattice parameters of ZrB/sub 2/ at of TiN/sub 0.6/ and TiN/sub 0.75/ are discussed. Powder metallurgical techniques are used to prepare TiB/sub 2/, ZrB/sub 2/, HfB/ sub 2/, NbB/sub 2/, a nd TaB/sub 2/ for detailed x-ray characterization. The electric conductivity of NbC-ZrC systems is reported. General descriptions are given of analytical techniques for free carbon in carbides and spectrographic methods for metallic impurities in carbides and borides. Preliminary roomtemperature measurements are reported of the elastic properties of polycrystalline ZrB/sub 2/. Titanium carbide is brazed to tungsten with a platinum-boron system. A largegrained polycrystalline specimen of ZrC is plastically deformed in creep at 2134 deg C. Metallographic and x-ray examinations of polycrystalline TiC specimens deformed in creep reveal an increasing development with deformation of subgrains having preferred orientation. (N.W.R.)« less

Synthesis and characterization of poly (dihydroxybiphenyl borate) with high char yield for high-performance thermosetting resins

NASA Astrophysics Data System (ADS)

Wang, Shujuan; Xing, Xiaolong; Li, Jian; Jing, Xinli

2018-01-01

The objective of the current work is to synthesize novel boron-containing polymers with excellent thermal resistance, and reveal the structure and the reason for the high char yield. Thus, poly (dihydroxybiphenyl borate) (PDDB) with a more rigid molecular chain, was successfully synthesized using 4,4‧-dihydroxybiphenyl and boric acid. Structural characterizations of the prepared PDDB were performed via NMR, FTIR, XPS, and XRD analyses. The results reveal that PDDB consists of aromatic, Phsbnd Osbnd B and Bsbnd Osbnd B structures as well as a small number of boron hydroxyl and phenolic hydroxyl groups. PDDB shows good solubility in strong polar solvents, which is of great importance for the modification of thermosetting resins. TGA combined with DSC were employed to evaluate the thermal properties of PDDB, and increases in the glass transition temperature (Tg) and char yield were observed with increased boron content. Tg and char yield of PDDB (800 °C, nitrogen atmosphere) reached up to 219 °C and 66.5%, respectively. PDDB was extensively characterized during pyrolysis to reveal the high char yield of PDDB. As briefly discussed, the boron oxide and boron carbide that formed during pyrolysis play a crucial role in the high char yield of PDDB, which reduces the release of volatile carbon dioxide and carbon. This research suggests that PDDB has great potential as a novel modified agent for the improvement of the comprehensive performance of thermosetting resins to broaden their applicability in the field of advanced composites.

Slicing of silicon into sheet material. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project. Third quarterly report, September 20, 1976--December 19, 1976

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holden, S.C.

1976-12-27

The stability of tensioned blades used in multiblade sawing does not seem to be the limitation in cutting with thin blades. So far, 0.010 cm thick blades have been totally unsuccessful. Recently, 0.015 cm blades have proven successful in wafering, offering an 0.005 cm reduction in the silicon used per slice. The failure of thin blades is characterized as a possible result of blade misalignment or from the inherent uncontrollability of the loose abrasive multiblade process. Corrective procedures will be employed in the assembly of packages to eliminate one type of blade misalignment. Two ingots were sliced with the samemore » batch of standard silicon carbide abrasive slurry to determine the useful lifetime of this expendable material. After 250 slices, the cutting efficiency had not degraded. Further tests will be continued to establish the maximum lifetime of both silicon carbide and boron carbide abrasive. Electron microscopy will be employed to evaluate the wear of abrasive particles in the failure of abrasive slurry. The surface damage of silicon wafers has been characterized as predominantly subsurface fracture. Damage with No. 600 SiC is between 10 and 15 microns into the wafer surface. This agrees well with previous investigations of damage from silicon carbide abrasive papers.« less

Mechanical contact induced transformation from the amorphous to the crystalline state in metallic glass

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1984-01-01

Friction and wear tests were conducted with 3.2- and 6.4-millimeter-diameter aluminum oxide spheres sliding, in reciprocating motion, on a Fe67Co18B14Si1 metallic foil. Crystallites with a size range of 10 to 150 nanometers were produced on the wear surface of the amorphous alloy. A strong interaction between transition metals and metalloids such as silicon and boron results in strong segregation during repeated sliding, provides preferential transition metal-metalloid clustering in the amorphous alloy, and subsequently produces the diffused honeycomb structure formed by dark grey bands and primary crystals, that is, alpha-Fe in the matrix. Large plastic flow occurs on an amorphous alloy surface with sliding and the flow film of the alloy transfers to the aluminum oxide pin surface. Multiple slip bands due to shear deformation are observed on the side of the wear track. Two distinct types of wear debris were observed as a result of sliding: an alloy wear debris, and/or powdery-whiskery oxide debris.

A facile method to synthesize boron-doped Ni/Fe alloy nano-chains as electrocatalyst for water oxidation

NASA Astrophysics Data System (ADS)

Yang, Yisu; Zhuang, Linzhou; Lin, Rijia; Li, Mengran; Xu, Xiaoyong; Rufford, Thomas E.; Zhu, Zhonghua

2017-05-01

We report a novel magnetic field assisted chemical reduction method for the synthesis of boron-doped Ni/Fe nano-chains as promising catalysts for the oxygen evolution reaction (OER). The boron-doped Ni/Fe nano-chains were synthesised in a one step process at room temperature using NaBH4 as a reducing agent. The addition of boron reduced the magnetic moment of the intermediate synthesis products and produced nano-chains with a high specific surface area of 73.4 m2 g-1. The boron-doped Ni/Fe nano-chains exhibited catalytic performance superior to state-of-the-art Ba0.5Sr0.5Co0.8Fe0.2O3-δ perovskite and RuO2 noble metal oxide catalysts. The mass normalized activity of the boron-doped Ni/Fe nano-chains measured at an overpotential of 0.35 V was 64.0 A g-1, with a Tafel slope of only 40 mV dec-1. The excellent performance of the boron-doped Ni/Fe nano-chains can be attributed to the uniform elemental distribution and highly amorphous structure of the B-doped nano-chains. These results provide new insights into the effect of doping transition-metal based OER catalysts with non-metallic elements. The study demonstrates a facile approach to prepare transition metal nano-chains using magnetic field assisted chemical reduction method as cheap and highly active catalysts for electrochemical water oxidation.

Boron Nitride Obtained from Molecular Precursors: Aminoboranes Used as a BN Source for Coatings, Matrix, and Si 3N 4-BN Composite Ceramic Preparation

NASA Astrophysics Data System (ADS)

Thévenot, F.; Doche, C.; Mongeot, H.; Guilhon, F.; Miele, P.; Cornu, D.; Bonnetot, B.

1997-10-01

Aminoboranes, pure or partially converted into aminoborazines using thermal or aminolysis polymerization, have been used as boron nitride precursors. An amorphous BN preceramic is obtained when pyrolysed up to 1000°C that can be stabilized using further annealing up to 1400°C or crystallized into h-BN above 1700°C. These molecular precursors have been used to prepare carbon fiber/BN matrix microcomposites to get an efficient BN coating on graphite and as a BN source in Si3N4/BN composite ceramic. The properties of these new types of samples have been compared with those obtained by classical processes. The boron nitride obtained from these precursors is a good sintering agent during the hot-pressing of the samples. However, the crystallinity of BN, even sintered up to 1800°C, remains poor. In fact, most of the mechanical properties of the composite ceramic (density, porosity, hardness) are clearly improved and the aminoboranes can be considered as convenient boron nitride sources and helpful sintering agents in hot-pressing technology.

Time-Dependent Stress Rupture Strength Degradation of Hi-Nicalon Fiber-Reinforced Silicon Carbide Composites at Intermediate Temperatures

NASA Technical Reports Server (NTRS)

Sullivan, Roy M.

2016-01-01

The stress rupture strength of silicon carbide fiber-reinforced silicon carbide composites with a boron nitride fiber coating decreases with time within the intermediate temperature range of 700 to 950 degree Celsius. Various theories have been proposed to explain the cause of the time-dependent stress rupture strength. The objective of this paper is to investigate the relative significance of the various theories for the time-dependent strength of silicon carbide fiber-reinforced silicon carbide composites. This is achieved through the development of a numerically based progressive failure analysis routine and through the application of the routine to simulate the composite stress rupture tests. The progressive failure routine is a time-marching routine with an iterative loop between a probability of fiber survival equation and a force equilibrium equation within each time step. Failure of the composite is assumed to initiate near a matrix crack and the progression of fiber failures occurs by global load sharing. The probability of survival equation is derived from consideration of the strength of ceramic fibers with randomly occurring and slow growing flaws as well as the mechanical interaction between the fibers and matrix near a matrix crack. The force equilibrium equation follows from the global load sharing presumption. The results of progressive failure analyses of the composite tests suggest that the relationship between time and stress-rupture strength is attributed almost entirely to the slow flaw growth within the fibers. Although other mechanisms may be present, they appear to have only a minor influence on the observed time-dependent behavior.

Advanced Nanocrystalline Ceramic Matrix Composites with Improved Toughness

DTIC Science & Technology

2009-01-09

Based Nanocomposites," Dongtao Jiang and Amiya Mukherjee, Scripta Materialia, 58, pp. 991-993, 2008. 7) "In Situ Boron Carbide- Titanium Diboride...specimen and polished to 1 µm finish. The single edge V-notched beam (SEVNB) samples were first notched using a 0.5-mm diamond saw blade to a depth of...600 µm and the final notches were created by hand using a razor blade and1-µm diamond paste. An optical microscope was used to measure the notch

Hard metal composition

DOEpatents

Sheinberg, H.

1983-07-26

A composition of matter having a Rockwell A hardness of at least 85 is formed from a precursor mixture comprising between 3 and 10 wt % boron carbide and the remainder a metal mixture comprising from 70 to 90% tungsten or molybdenum, with the remainder of the metal mixture comprising nickel and iron or a mixture thereof. The composition has a relatively low density of between 7 and 14 g/cc. The precursor is preferably hot pressed to yield a composition having greater than 100% of theoretical density.

Hard metal composition

DOEpatents

Sheinberg, Haskell

1986-01-01

A composition of matter having a Rockwell A hardness of at least 85 is formed from a precursor mixture comprising between 3 and 10 weight percent boron carbide and the remainder a metal mixture comprising from 70 to 90 percent tungsten or molybdenum, with the remainder of the metal mixture comprising nickel and iron or a mixture thereof. The composition has a relatively low density of between 7 to 14 g/cc. The precursor is preferably hot pressed to yield a composition having greater than 100% of theoretical density.

The Effect of Interface Treatment on Ceramic Performance and Modeling Dyneema Subjected to Ballistic Impact

DTIC Science & Technology

2018-01-23

aluminum plate; and the time history of the aluminum back surface displacement located directly under the sphere. Figures 2-4 present the computed results... displacements as a function of time. It is clear that the computed results using no bond produce more damage in the ceramic plate and much more... displacement of the aluminum back plate. Figures 5-7 present the computed results for boron carbide (using the TR model), for impact velocities of V

Mechanisms of boron removal from hydraulic fracturing wastewater by aluminum electrocoagulation.

PubMed

Sari, Mutiara Ayu; Chellam, Shankararaman

2015-11-15

Boron uptake from highly saline hydraulic fracturing wastewater by freshly precipitated amorphous Al(OH)3 precipitates is due to ligand exchange and complexation with surface hydroxyl groups. Consequently, aluminum electrocoagulation can be a feasible approach to remove boron from flowback/produced water. Actual hydraulic fracturing wastewater containing ∼120mg/L boron from the Eagle Ford shale play was employed. Electrocoagulation was performed over a range of aluminum dosages (0-1350mg/L), pH 6.4 and 8, and high current densities (20-80mA/cm(2)) using a cylindrical aluminum anode encompassed by a porous cylindrical 316-stainless steel cathode. Direct measurements of boron uptake along with its chemical state and coordination were made using Attenuated Total Reflection-Fourier Transform Infrared spectroscopy (ATR-FTIR) and X-Ray Photoelectron Spectroscopy. Boron removal increased monotonically with aluminum dosage and was higher at pH 8, but remained relatively constant at ⩾20mA/cm(2). Chloride ions induced anodic pitting and super-Faradaic (131% efficiency) aluminum dissolution and their electrooxidation produced free chlorine. ATR-FTIR suggested outer-sphere and inner-sphere complexation of trigonal B(OH)3 with Al(OH)3, which was confirmed by the BO bond shifting toward lower binding energies in XPS. Severe AlO interferences precluded evidence for tetrahedral B(OH)4(-) complexation. No evidence for co-precipitation was obtained. Copyright © 2015 Elsevier Inc. All rights reserved.

Synthesis and Characterization of Three Dimensional Nanostructures Based on Interconnected Carbon Nanomaterials

NASA Astrophysics Data System (ADS)

Koizumi, Ryota

This thesis addresses various types of synthetic methods for novel three dimensional nanomaterials and nanostructures based on interconnected carbon nanomaterials using solution chemistry and chemical vapor deposition (CVD) methods. Carbon nanotube (CNT) spheres with porous and scaffold structures consisting of interconnected CNTs were synthesized by solution chemistry followed by freeze-drying, which have high elasticity under nano-indentation tests. This allows the CNT spheres to be potentially applied to mechanical dampers. CNTs were also grown on two dimensional materials--such as reduced graphene oxide (rGO) and hexagonal boron nitride (h-BN)--by CVD methods, which are chemically interconnected. CNTs on rGO and h-BN interconnected structures performed well as electrodes for supercapacitors. Furthermore, unique interconnected flake structures of alpha-phase molybdenum carbide were developed by a CVD method. The molybdenum carbide can be used for a catalyst of hydrogen evolution reaction activity as well as an electrode for supercapacitors.

Structure and properties of Hardox 450 steel with arc welded coatings

NASA Astrophysics Data System (ADS)

Ivanov, Yu. F.; Konovalov, S. V.; Kormyshev, V. E.; Gromov, V. E.; Teresov, A. D.; Semina, O. A.

2017-12-01

The paper reports on a study of the surface structure, phase composition, and microhardness of Hardox 450 steel with coatings deposited by arc welding of powder wires differing in chemical composition. The study shows that to a depth of 6-8 mm, the microhardness of the thus formed coatings is more than two times the microhardness of the base metal and that their higher mechanical properties are provided by martensite structure containing Nb2C and NbC carbides and Fe2B borides as eutectic lamellae with a transverse size of 30-70 nm; their volume reveals a net-like dislocation substructure with a scalar dislocation density of 1011 cm-2. The highest surface hardness is found for the steel coated with boron-containing wire material. Some ideas are suggested on possible mechanisms and temperature for the formation of Nb and B carbides during the process.

Methods for producing silicon carbide architectural preforms

NASA Technical Reports Server (NTRS)

DiCarlo, James A. (Inventor); Yun, Hee (Inventor)

2010-01-01

Methods are disclosed for producing architectural preforms and high-temperature composite structures containing high-strength ceramic fibers with reduced preforming stresses within each fiber, with an in-situ grown coating on each fiber surface, with reduced boron within the bulk of each fiber, and with improved tensile creep and rupture resistance properties for each fiber. The methods include the steps of preparing an original sample of a preform formed from a pre-selected high-strength silicon carbide ceramic fiber type, placing the original sample in a processing furnace under a pre-selected preforming stress state and thermally treating the sample in the processing furnace at a pre-selected processing temperature and hold time in a processing gas having a pre-selected composition, pressure, and flow rate. For the high-temperature composite structures, the method includes additional steps of depositing a thin interphase coating on the surface of each fiber and forming a ceramic or carbon-based matrix within the sample.

Feasibility Assessment for Pressure Casting of Ceramic-Aluminum Composites for NASA's Propulsion Applications

NASA Technical Reports Server (NTRS)

Lee, Jonathan A.

2005-01-01

Feasibility assessment of pressure casting of ceramic-aluminum composites for NASA% propulsion applications is summarized. A combination of several demonstration projects to produce three unique components for liquid hydrogen-oxygen rocket engine% flanges, valves and turbo-pump housing are conducted. These components are made from boron carbide, silicon carbide and alumina powders fabricated into complex net shaped parts using dry green powder compaction, slip casting or a novel 3D ink-jet printing process, followed by sintering to produce performs that can be pressure cast by infiltration with molten aluminum. I n addition, joining techniques are also explored to insure that these components can be assembled into a structure without degrading their highly tailored properties. The feasibility assessment was made to determine if these new materials could provide a significant weight savings, thereby reducing vehicle launch costs, while being durable materials to increase safety and performance for propulsion system.

Fractography and the Surface Crack in Flexure (SCF) method for evaluating fracture toughness of ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quinn, G.D.; Gettings, R.J.; Kuebler, J.J.

1996-12-31

The surface crack in flexure (SCF) method, also known as the controlled surface flaw method, has been used to measure fracture toughness of ceramics and glasses for almost 20 years. New fracture toughness results for a range of ceramics and glasses including alumina, boron carbide, silicon carbide, silicon nitride, titanium diboride, zirconia, glass ceramic, borosilicate crown glass, and a whisker-reinforced alumina are presented in this paper. Some materials are conducive to precrack measurements, while others are not. New techniques for detecting the precracks are presented. A surprising outcome from a recently concluded Versailles Advanced Materials and Standards (VAMAS) round robinmore » project was that the computed toughness is often not sensitive to the exact precrack size measurement. Consistent results were obtained by many laboratories despite different viewing modes and magnifications. The reasons for this consistency and why toughness is insensitive to precrack size is presented.« less

Materials for Advanced Turbine Engines (MATE). Project 4: Erosion resistant compressor airfoil coating

NASA Technical Reports Server (NTRS)

Rashid, J. M.; Freling, M.; Friedrich, L. A.

1987-01-01

The ability of coatings to provide at least a 2X improvement in particulate erosion resistance for steel, nickel and titanium compressor airfoils was identified and demonstrated. Coating materials evaluated included plasma sprayed cobalt tungsten carbide, nickel carbide and diffusion applied chromium plus boron. Several processing parameters for plasma spray processing and diffusion coating were evaluated to identify coating systems having the most potential for providing airfoil erosion resistance. Based on laboratory results and analytical evaluations, selected coating systems were applied to gas turbine blades and evaluated for surface finish, burner rig erosion resistance and effect on high cycle fatigue strength. Based on these tests, the following coatings were recommended for engine testing: Gator-Gard plasma spray 88WC-12Co on titanium alloy airfoils, plasma spray 83WC-17Co on steel and nickel alloy airfoils, and Cr+B on nickel alloy airfoils.

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

NASA Astrophysics Data System (ADS)

Stumpf, F.; Abu Quba, A. A.; Singer, P.; Rumler, M.; Cherkashin, N.; Schamm-Chardon, S.; Cours, R.; Rommel, M.

2018-03-01

The lateral damage induced by focused ion beam on silicon carbide was characterized using electrical scanning probe microscopy (SPM), namely, scanning spreading resistance microscopy and conductive atomic force microscopy (c-AFM). It is shown that the damage exceeds the purposely irradiated circles with a radius of 0.5 μm by several micrometres, up to 8 μm for the maximum applied ion dose of 1018 cm-2. Obtained SPM results are critically compared with earlier findings on silicon. For doses above the amorphization threshold, in both cases, three different areas can be distinguished. The purposely irradiated area exhibits resistances smaller than the non-affected substrate. A second region with strongly increasing resistance and a maximum saturation value surrounds it. The third region shows the transition from maximum resistance to the base resistance of the unaffected substrate. It correlates to the transition from amorphized to defect-rich to pristine crystalline substrate. Additionally, conventional transmission electron microscopy (TEM) and annular dark-field STEM were used to complement and explain the SPM results and get a further understanding of the defect spreading underneath the surface. Those measurements also show three different regions that correlate well with the regions observed from electrical SPM. TEM results further allow to explain observed differences in the electrical results for silicon and silicon carbide which are most prominent for ion doses above 3 × 1016 cm-2. Furthermore, the conventional approach to perform current-voltage measurements by c-AFM was critically reviewed and several improvements for measurement and analysis process were suggested that result in more reliable and impactful c-AFM data.

Chemically synthesized boron carbon oxynitride as a new cold cathode material

NASA Astrophysics Data System (ADS)

Banerjee, Diptonil; Maity, Supratim; Chattopadhyay, K. K.

2015-11-01

Synthesis of boron carbon oxynitride (BCNO) nanosheets at different temperature from amorphous to crystalline regime has been reported. The synthesis was done by a simple molten salt process using sodium borohydride and urea as precursors. Transmission electron microscopic study confirms the formation of sheet-like structure of the as-synthesized material. The performances of the as-synthesized BCNO nanosheets as cold cathode materials have been studied for the first time in the high vacuum electron field emission set up. It has been seen that the material gives considerable field emission current with turn on field as low as 2.95 V/μm with good stability and thus a new cold cathode material can be postulated.

Structure of Boron Nitride Nanotubes: Tube Closing Vs. Chirality

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Menon, Madhu

1998-01-01

The structure of boron nitride nanotubes is investigated using a generalized tight-binding molecular dynamics method. It is shown that dynamic relaxation results in a wavelike or "rippled" surface in which the B atoms rotate inward and the N atoms move outward, reminiscent of the surface relaxation of the III-V semiconductors. More importantly, the three different morphologies of the tube closing with flat, conical and amorphous ends, as observed in experiments, are shown to be directly related to the tube chiralities. The abundance of flat end tubes observed in experiments is, thus, shown to be an indication of the greater stability of "zig-zag" BN tubes over the "arm-chair" tubes under experimental conditions.

Shock induced polymorphic transition in quartz, carbon, and boron nitride

NASA Technical Reports Server (NTRS)

Tan, Hua; Ahrens, Thomas J.

1990-01-01

The model proposed by Ahrens (1988) to explain the mechanism of the polymorphism in silicates is revised, and the revised model is applied to the quartz/stishovite, graphite/diamond, and graphite-boron nitride (g-BN) phase transformations. In this model, a key assumption is that transformation to a high-density amorphous or possibly liquid phase which rapidly crystallized to the high-pressure phase is triggered by the high temperatures in the shear band and upon crossing the metastable extension of a melting curve. Good agreement between the calcualted results and published data is obtained. The present theory predicts the standard entropy for cubic BN to be 0.4-0.5 J/g K.

[beta]-silicon carbide protective coating and method for fabricating same

DOEpatents

Carey, P.G.; Thompson, J.B.

1994-11-01

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating are disclosed. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or [mu]c-SiC film on the surface and produce [beta]-SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface. 3 figs.

Atomistic insights on the nanoscale single grain scratching mechanism of silicon carbide ceramic based on molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Liu, Yao; Li, Beizhi; Kong, Lingfei

2018-03-01

The precision and crack-free surface of brittle silicon carbide (SiC) ceramic was achieved in the nanoscale ductile grinding. However, the nanoscale scratching mechanism and the root causes of SiC ductile response, especially in the atomistic aspects, have not been fully understood yet. In this study, the SiC atomistic scale scratching mechanism was investigated by single diamond grain scratching simulation based on molecular dynamics. The results indicated that the ductile scratching process of SiC could be achieved in the nanoscale depth of cut through the phase transition to an amorphous structure with few hexagonal diamond structure. Furthermore, the silicon atoms in SiC could penetrate into diamond grain which may cause wear of diamond grain. It was further found out that the chip material in the front of grain flowed along the grain side surface to form the groove protrusion as the scratching speed increases. The higher scratching speed promoted more atoms to transfer into the amorphous structure and reduced the hexagonal diamond and dislocation atoms number, which resulted in higher temperature, smaller scratching force, smaller normal stress, and thinner subsurface damage thickness, due to larger speed impaction causing more bonds broken which makes the SiC more ductile.

[Synergetic effects of silicon carbide and molecular sieve loaded catalyst on microwave assisted catalytic oxidation of toluene].

PubMed

Wang, Xiao-Hui; Bo, Long-Li; Liu, Hai-Nan; Zhang, Hao; Sun, Jian-Yu; Yang, Li; Cai, Li-Dong

2013-06-01

Molecular sieve loaded catalyst was prepared by impregnation method, microwave-absorbing material silicon carbide and the catalyst were investigated for catalytic oxidation of toluene by microwave irradiation. Research work examined effects of silicon carbide and molecular sieve loading Cu-V catalyst's mixture ratio as well as mixed approach changes on degradation of toluene, and characteristics of catalyst were measured through scanning electron microscope, specific surface area test and X-ray diffraction analysis. The result showed that the fixed bed reactor had advantages of both thermal storage property and low-temperature catalytic oxidation when 20% silicon carbide was filled at the bottom of the reactor, and this could effectively improve the utilization of microwave energy as well as catalytic oxidation efficiency of toluene. Under microwave power of 75 W and 47 W, complete-combustion temperatures of molecular sieve loaded Cu-V catalyst and Cu-V-Ce catalyst to toluene were 325 degrees C and 160 degrees C, respectively. Characteristics of the catalysts showed that mixture of rare-earth element Ce increased the dispersion of active components in the surface of catalyst, micropore structure of catalyst effectively guaranteed high adsorption capacity for toluene, while amorphous phase of Cu and V oxides increased the activity of catalyst greatly.

Effect of processing on fracture toughness of silicon carbide as determined by Vickers indentations

NASA Technical Reports Server (NTRS)

Dannels, Christine M.; Dutta, Sunil

1989-01-01

Several alpha-SiC materials were processed by hot isostatic pressing (HIPing) and by sintering an alpha-SiC powder containing boron and carbon. Several beta-SiC materials were processed by HIPing a beta-SiC powder with boron and carbon additions. The fracture toughnesses K(sub 1c) of these beta- and alpha-SiC materials were estimated from measurements of Vickers indentations. The three formulas used to estimate K(sub 1c) from the indentation fracture patterns resulted in three ranges of K(sub 1c) estimates. Furthermore, each formula measured the effects of processing differently. All three estimates indicated that fine-grained HIPed alpha-SiC has a higher K(sub 1c) than coarsed-grained sintered alpha-SiC. Hot isostatically pressed beta-SiC, which had an ultrafine grain structure, exhibited a K(sub 1c) comparable to that of HIPed alpha-SiC.

Oven rack having integral lubricious, dry porcelain surface

DOEpatents

Ambrose, Jeffrey A; Mackiewicz-Ludtka, Gail; Sikka, Vinod K; Qu, Jun

2014-06-03

A lubricious glass-coated metal cooking article capable of withstanding repeated heating and cooling between room temperature and at least 500.degree. F. without chipping or cracking the glass coating, wherein the glass coating includes about 0.1 to about 20% by weight of a homogeneously distributed dry refractory lubricant material having a particle size less than about 200 .mu.m. The lubricant material is selected from the group consisting of carbon; graphite; boron nitride; cubic boron nitride; molybdenum (FV) sulfide; molybdenum sulfide; molybdenum (IV) selenide; molybdenum selenide, tungsten (IV) sulfide; tungsten disulfide; tungsten sulfide; silicon nitride (Si.sub.3N.sub.4); TiN; TiC; TiCN; TiO.sub.2; TiAlN; CrN; SiC; diamond-like carbon; tungsten carbide (WC); zirconium oxide (ZrO.sub.2); zirconium oxide and 0.1 to 40 weight % aluminum oxide; alumina-zirconia; antimony; antimony oxide; antimony trioxide; and mixtures thereof.

Characterization of boron coated vitreous carbon foam for neutron detection

NASA Astrophysics Data System (ADS)

Lavelle, C. M.; Deacon, Ryan M.; Hussey, Daniel S.; Coplan, Michael; Clark, Charles W.

2013-11-01

Reticulated vitreous carbon (RVC) foams coated with 3-11 μm thick layers of boron carbide (B4C) are experimentally characterized for use as an active material for neutron detection. The potential advantage of this material over thin films is that it can be fabricated in any shape and its porous structure may enhance the emission surface area for ionizing charged particles following thermal neutron capture. A coated foam is also advantageous because the neutron-absorbing material is only on the surface, which is more efficient for α particle emission on a per captured neutron basis. Measurements of the B4C layer thickness of an RVC coated foam, and determination of its elemental composition, are performed using scanning electron microscopy. Neutron transmission measurements using neutron radiography are presented and α particle emission from the coated foam in response to a moderated 252Cf thermal neutron source is demonstrated.

Effect of particle size and percentages of Boron carbide on the thermal neutron radiation shielding properties of HDPE/B4C composite: Experimental and simulation studies

NASA Astrophysics Data System (ADS)

Soltani, Zahra; Beigzadeh, Amirmohammad; Ziaie, Farhood; Asadi, Eskandar

2016-10-01

In this paper the effects of particle size and weight percentage of the reinforcement phase on the absorption ability of thermal neutron by HDPE/B4C composites were investigated by means of Monte-Carlo simulation method using MCNP code and experimental studies. The composite samples were prepared using the HDPE filled with different weight percentages of Boron carbide powder in the form of micro and nano particles. Micro and nano composite were prepared under the similar mixing and moulding processes. The samples were subjected to thermal neutron radiation. Neutron shielding efficiency in terms of the neutron transmission fractions of the composite samples were investigated and compared with simulation results. According to the simulation results, the particle size of the radiation shielding material has an important role on the shielding efficiency. By decreasing the particle size of shielding material in each weight percentages of the reinforcement phase, better radiation shielding properties were obtained. It seems that, decreasing the particle size and homogeneous distribution of nano forms of B4C particles, cause to increase the collision probability between the incident thermal neutron and the shielding material which consequently improve the radiation shielding properties. So, this result, propose the feasibility of nano composite as shielding material to have a high performance shielding characteristic, low weight and low thick shielding along with economical benefit.

Impact Ignition and Combustion Behavior of Amorphous Metal-Based Reactive Composites

NASA Astrophysics Data System (ADS)

Mason, Benjamin; Groven, Lori; Son, Steven

2013-06-01

Recently published molecular dynamic simulations have shown that metal-based reactive powder composites consisting of at least one amorphous component could lead to improved reaction performance due to amorphous materials having a zero heat of fusion, in addition to having high energy densities and potential uses such as structural energetic materials and enhanced blast materials. In order to investigate the feasibility of these systems, thermochemical equilibrium calculations were performed on various amorphous metal/metalloid based reactive systems with an emphasis on commercially available or easily manufactured amorphous metals, such as Zr and Ti based amorphous alloys in combination with carbon, boron, and aluminum. Based on the calculations and material availability material combinations were chosen. Initial materials were either mixed via a Resodyn mixer or mechanically activated using high energy ball milling where the microstructure of the milled material was characterized using x-ray diffraction, optical microscopy and scanning electron microscopy. The mechanical impact response and combustion behavior of select reactive systems was characterized using the Asay shear impact experiment where impact ignition thresholds, ignition delays, combustion velocities, and temperatures were quantified, and reported. Funding from the Defense Threat Reduction Agency (DTRA), Grant Number HDTRA1-10-1-0119. Counter-WMD basic research program, Dr. Suhithi M. Peiris, program director is gratefully acknowledged.

Bringing nanomagnetism to the mesoscale with artificial amorphous structures

NASA Astrophysics Data System (ADS)

Muscas, G.; Brucas, R.; Jönsson, P. E.

2018-05-01

In the quest for materials with emergent or improved properties, an effective route is to create artificial superstructures. Novel properties emerge from the coupling between the phases, but the strength of this coupling depends on the quality of the interfaces. Atomic control of crystalline interfaces is notoriously complicated and to elude that obstacle, we suggest here an all-amorphous design. Starting from a model amorphous iron alloy, we locally tune the magnetic behavior by creating boron-doped regions by means of ion implantation through a lithographic mask. This process preserves the amorphous environment, creating a non-topographic magnetic superstructure with smooth interfaces and no structural discontinuities. The absence of inhomogeneities acting as pinning centers for the magnetization reversal is demonstrated by the formation of magnetic vortexes for ferromagnetic disks as large as 20 µm in diameter embedded within a paramagnetic matrix. Rigid exchange coupling between two amorphous ferromagnetic phases in a microstructured sample is evidenced by an investigation involving first-order reversal curves. The sample consists of a soft matrix with embedded elements constituting a hard phase where the anisotropy originates from an elongated shape of the elements. We provide an intuitive explanation for the micrometer-range exchange coupling mechanism and discuss how to tailor the properties of all-amorphous superstructures.

Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene.

PubMed

Rigosi, Albert F; Hill, Heather M; Glavin, Nicholas R; Pookpanratana, Sujitra J; Yang, Yanfei; Boosalis, Alexander G; Hu, Jiuning; Rice, Anthony; Allerman, Andrew A; Nguyen, Nhan V; Hacker, Christina A; Elmquist, Randolph E; Hight Walker, Angela R; Newell, David B

2018-01-01

Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous and hexagonal boron nitride ( a -BN and h -BN) films. The a -BN is formed with pulsed laser deposition and the h -BN is grown with triethylboron (TEB) and NH 3 precursors, making it the first metal organic chemical vapor deposition (MOCVD) process of this growth type performed on epitaxial graphene. A variety of optical and non-optical characterization methods are used to determine the optical absorption and dielectric functions of the EG, a -BN, and h -BN within the energy range of 1 eV to 8.5 eV. Furthermore, we report the first ellipsometric observation of high-energy resonant excitons in EG from the 4H polytype of SiC and an analysis on the interactions within the EG and h -BN heterostructure.

Method and apparatus for coating thin foil with a boron coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacy, Jeffrey L.

An apparatus and a process is disclosed for applying a boron coating to a thin foil. Preferably, the process is a continuous, in-line process for applying a coating to a thin foil comprising wrapping the foil around a rotating and translating mandrel, cleaning the foil with glow discharge in an etching chamber as the mandrel with the foil moves through the chamber, sputtering the foil with boron carbide in a sputtering chamber as the mandrel moves through the sputtering chamber, and unwinding the foil off the mandrel after it has been coated. The apparatus for applying a coating to amore » thin foil comprises an elongated mandrel. Foil preferably passes from a reel to the mandrel by passing through a seal near the initial portion of an etching chamber. The mandrel has a translation drive system for moving the mandrel forward and a rotational drive system for rotating mandrel as it moves forward. The etching chamber utilizes glow discharge on a surface of the foil as the mandrel moves through said etching chamber. A sputtering chamber, downstream of the etching chamber, applies a thin layer comprising boron onto the surface of the foil as said mandrel moves through said sputtering chamber. Preferably, the coated foil passes from the mandrel to a second reel by passing through a seal near the terminal portion of the sputtering chamber.« less

Dynamic consolidation of cubic boron nitride and its admixtures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, H.; Ahrens, T.J.

1988-09-01

Cubic boron nitride (C-BN) powders admixed with graphite-structured boron nitride powder (g-BN), silicon carbide whisker (SCW), or silicon nitride whisker (SNW) were shock compacted to pressures up to 22 GPa. Unlike previous work with diamond and graphite (D. K. Potter and T. J. Ahrens, J. Appl. Phys. 63, 910 (1987)) it was found that the addition of g-BN inhibited dynamic consolidation. Good consolidation was achieved with a 4--8 ..mu..m particle size C-BN powder admixed with 15 wt.% SNW or 20 wt.% SCW. Whereas a 37--44 ..mu..m particle size C-BN mixture was only poorly consolidated. Scanning electron microscopy (SEM) analysis demonstratemore » that SCW and SNW in the mixtures were highly deformed and indicated melt textures. A skin heating model was used to describe the physics of consolidation. Model calculations are consistent with SEM analysis images that indicate plastic deformation of SCW and SNW. Micro-Vickers hardness values as high as 50 GPa were obtained for consolidated C-BN and SNW mixtures. This compares to 21 GPa for single-crystal Al/sub 2/O/sub 3/ and 120 GPa for diamond.« less

Pyrolytic boron nitride coatings on ceramic yarns and fabrication of insulations

NASA Technical Reports Server (NTRS)

Moore, Arthur W.

1992-01-01

Pyrolytic boron nitride (PBN) was deposited on Nicalon NL 202 silicon carbide yarns at 1000 to 1200 C with the goal of improving the resistance of the Nicalon to deterioration in an aerodynamic environment at temperatures up to 1000 C. For continuous coating, the yarns were fed through the deposition chamber of a pilot plant sized CVD furnace at a rate of about 2 feet per minute. PBN coatings were obtained by reacting boron trichloride and ammonia gases inside the deposition chamber. Most of the PBN coatings were made at around 1080 C to minimize thermal degradation of the Nicalon. Pressures were typically below 0.1 Torr. The coated yarns were characterized by weight per unit length, tensile strength and modulus, scanning electron microscopy, and scanning Auger microscopy. The PBN coated Nicalon was woven into cloth, but was not entirely satisfactory as a high temperature sizing. Several 13 in. square pieces of Nicalon cloth were coated with PBN in a batch process in a factory sized deposition furnace. Samples of cloth made from the PBN coated Nicalon were sewn into thermal insulation panels, whose performance is being compared with that of panels made using uncoated Nicalon.

Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Limin; Jiang, Weilin; Ai, Wensi

Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 115 Xe/nm2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 μm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the dose range from 6 to 20 dpa. A transformation of homonuclear C-C bonds from sp3 to sp2 hybridization is observed in themore » irradiated films, which may be partly responsible for the observed grain size saturation. The results from this study may have a significant impact on synthesis of nanograins in amorphous SiC and other similar materials with effective control of grain size and density by ion irradiation.« less

The use of metalorganics in the preparation of semiconductor materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manasevit, H.M.; Hewitt, W.B.; Nelson, A.J.

1989-10-01

The authors describe boron-arsenic and boron-phosphorus films grown on Si, sapphire, and silicon-on-sapphire (SOS) by pyrolyzing Group III alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB) in the presence of AsH/sub 3/ and PH/sub 3/, respectively, in a H/sub 2/ atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. The films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH/sub 3/ were pyrolyzed over the temperature range of 550{sup 0}-900{sup 0}C. The filmsmore » were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 {mu}m) B-P and thick (5 {mu}m) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH/sub 3/ and TMB showed a higher carbon content than those grown from AsH/sub 3/ and TMB. Based on their B/As and B/P ratios, films with nominal compositions B/sub 12-16/As/sub 2/P and B/sub 1.1-1.3/P were grown using TMB as the boron source.« less

Development of large diameter carbon monofilament

NASA Technical Reports Server (NTRS)

Jacob, B.; Neltri, R. D.

1973-01-01

A process for preparing large diameter carbon-boron monofilament was developed. The process involves chemical vapor depositing a carbon-boron alloy monofilament from a BCl3, CH4, and H2 gas mixture onto a carbon substrate. Amorphous alloys were formed when gaseous mixtures containing greater than 20 percent methane (80 percent BCl3) were used. The longest uninterrupted lengths of carbon-boron monofilament were produced using a CH4/BCl3 gas ratio of 2.34. It was found that the properties of the carbon-boron alloy monofilament improved when the carbon substrate was precleaned in chlorine. The highest strength monofilament was attained when a CH4/BCl3 gas volume ratio of 0.44 was 28 million N/sq cm (40 million psi). While the highest strengths were attained in this run, the 0.44 gas ratio and other CH4/BCl3 ratios less than 2.34 would not yield long runs. Runs using these ratios were usually terminated because of a break in the monofilament within the reactor. It is felt better process control could probably be achieved by varying the amount of hydrogen; the BCl3/H2 ratio was kept constant in these studies.

Effect of gas flow ratio on the microstructure and mechanical properties of boron phosphide films prepared by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Jia, Z. C.; Zhu, J. Q.; Jiang, C. Z.; Shen, W. X.; Han, J. C.; Chen, R. R.

2011-10-01

Boron phosphide films were grown on silicon substrate by radio frequency reactive magnetron sputtering using boron target and hydrogen phosphine at different gas flow ratios (PH 3/Ar) at lower temperature. The chemical composition, microstructure and mechanical properties were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectrum, FTIR spectrum, surface profilometer and nano-indenter. The results indicate that the atomic ratio (P/B) rises from 1.06 up to 1.52 with the gas flow ratio increasing from 3/50 to 15/50. Simultaneously, the hardness and Young's modulus decrease from 25.4 GPa to 22.5 GPa, and 250.4 GPa to 238.4 GPa, respectively. Microstructure transforms from microcrystalline state to amorphous state along with the gas flow ratio increasing. Furthermore higher gas flow ratio leads to lower stress. The BP film prepared at the gas flow ratio of 3/50 can be contributed with the best properties.

Reactive multilayer synthesis of hard ceramic foils and films

DOEpatents

Makowiecki, Daniel M.; Holt, Joseph B.

1996-01-01

A method for synthesizing hard ceramic materials such as carbides, borides nd aluminides, particularly in the form of coatings provided on another material so as to improve the wear and abrasion performance of machine tools, for example. The method involves the sputter deposition of alternating layers of reactive metals with layers of carbon, boron, or aluminum and the subsequent reaction of the multilayered structure to produce a dense crystalline ceramic. The material can be coated on a substrate or formed as a foil which can be coild as a tape for later use.

Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application

DOEpatents

Barbee, Jr., Troy W.; Bajt, Sasa

2002-01-01

The reflectivity and thermal stability of Mo/Si (molybdenum/silicon) multilayer films, used in soft x-ray and extreme ultraviolet region, is enhanced by deposition of a thin layer of boron carbide (e.g., B.sub.4 C) between alternating layers of Mo and Si. The invention is useful for reflective coatings for soft X-ray and extreme ultraviolet optics, multilayer for masks, coatings for other wavelengths and multilayers for masks that are more thermally stable than pure Mo/Si multilayers

Comparison Of Models Of Metal-Matrix Composites

NASA Technical Reports Server (NTRS)

Bigelow, C. A.; Johnson, W. S.; Naik, R. A.

1994-01-01

Report presents comparative review of four mathematical models of micromechanical behaviors of fiber/metal-matrix composite materials. Models differ in various details, all based on properties of fiber and matrix constituent materials, all involve square arrays of fibers continuous and parallel and all assume complete bonding between constituents. Computer programs implementing models used to predict properties and stress-vs.-strain behaviors of unidirectional- and cross-ply laminated composites made of boron fibers in aluminum matrices and silicon carbide fibers in titanium matrices. Stresses in fiber and matrix constituent materials also predicted.

Cathode for aluminum producing electrolytic cell

DOEpatents

Brown, Craig W.

2004-04-13

A method of producing aluminum in an electrolytic cell comprising the steps of providing an anode in a cell, preferably a non-reactive anode, and also providing a cathode in the cell, the cathode comprised of a base material having low electrical conductivity reactive with molten aluminum to provide a highly electrically conductive layer on the base material. Electric current is passed from the anode to the cathode and alumina is reduced and aluminum is deposited at the cathode. The cathode base material is selected from boron carbide, and zirconium oxide.

Novel fabrication of silicon carbide based ceramics for nuclear applications

NASA Astrophysics Data System (ADS)

Singh, Abhishek Kumar

Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous silicon carbide (a-SiC) at 900--1150 °C. Results indicated that this processing technique can be effectively used to fabricate various silicon carbide composites with UC or UO2 as the nuclear component.

Investigation of amorphization energies for heavy ion implants into silicon carbide at depths far beyond the projected ranges

NASA Astrophysics Data System (ADS)

Friedland, E.

2017-01-01

At ion energies with inelastic stopping powers less than a few keV/nm, radiation damage is thought to be due to atomic displacements by elastic collisions only. However, it is well known that inelastic processes and non-linear effects due to defect interaction within collision cascades can significantly increase or decrease damage efficiencies. The importance of these processes changes significantly along the ion trajectory and becomes negligible at some distance beyond the projected range, where damage is mainly caused by slowly moving secondary recoils. Hence, in this region amorphization energies should become independent of the ion type and only reflect the properties of the target lattice. To investigate this, damage profiles were obtained from α-particle channeling spectra of 6H-SiC wafers implanted at room temperature with ions in the mass range 84 ⩽ M ⩽ 133, employing the computer code DICADA. An average amorphization dose of (0.7 ± 0.2) dpa and critical damage energy of (17 ± 6) eV/atom are obtained from TRIM simulations at the experimentally observed boundary positions of the amorphous zones.

Impact of Substrate Types on Structure and Emission of ZnO Nanocrystalline Films

NASA Astrophysics Data System (ADS)

Ballardo Rodriguez, I. Ch.; El Filali, B.; Díaz Cano, A. I.; Torchynska, T. V.

2018-02-01

Zinc oxide (ZnO) films were simultaneously synthesized by an ultrasonic spray pyrolysis (USP) method on p-type Si (100), silicon carbide polytype [6H-SiC (0001)], porous 6H-SiC and amorphous glass substrates with the aim of studying the impact of substrate types on the structure and emission of ZnO nanocrystalline films. Porous silicon carbide (P-SiC) was prepared by the electrochemical anodization method at a constant potential of 20 V and etching time of 12 min. ZnO films grown on the SiC and P-SiC substrates are characterized by a wurtzite crystal structure with preferential growth along the (002) direction and with grain sizes of 90-180 and 70-160 nm, respectively. ZnO films grown on the Si substrate have just some small irregular hexagonal islands. The amorphous glass substrate did not promote the formation of any regular crystal forms. The obtained x-ray diffraction and photoluminescence (PL) results have shown that the better ZnO film crystallinity and high PL intensity of near-band edge emissions were achieved in the films grown on the porous SiC and SiC substrates. The preferential growth and crystalline nature of ZnO films on the SiC substrate have been discussed from the point of view of the lattice parameter compatibility between ZnO and SiC crystals.

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

NASA Technical Reports Server (NTRS)

Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

1986-01-01

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

Transition metal carbides, nitrides and borides, and their oxygen containing analogs useful as water gas shift catalysts

DOEpatents

Thompson, Levi T.; Patt, Jeremy; Moon, Dong Ju; Phillips, Cory

2003-09-23

Mono- and bimetallic transition metal carbides, nitrides and borides, and their oxygen containing analogs (e.g. oxycarbides) for use as water gas shift catalysts are described. In a preferred embodiment, the catalysts have the general formula of M1.sub.A M2.sub.B Z.sub.C O.sub.D, wherein M1 is selected from the group consisting of Mo, W, and combinations thereof; M2 is selected from the group consisting of Fe, Ni, Cu, Co, and combinations thereof; Z is selected from the group consisting of carbon, nitrogen, boron, and combinations thereof; A is an integer; B is 0 or an integer greater than 0; C is an integer; O is oxygen; and D is 0 or an integer greater than 0. The catalysts exhibit good reactivity, stability, and sulfur tolerance, as compared to conventional water shift gas catalysts. These catalysts hold promise for use in conjunction with proton exchange membrane fuel cell powered systems.

Fabrication of Lightweight Radiation Shielding Composite Materials by Field Assisted Sintering Technique (FAST)

NASA Technical Reports Server (NTRS)

Prasad, Narasimha; Trivedi, Sudhir; Chen, Henry; Kutcher, Susan; Zhang, Dajie; Singh, Jogender

2017-01-01

Advances in radiation shielding technologies are needed to protect humans and electronic components from all threats of space radiation over long durations. In this paper, we report on the use of the innovative and novel fabrication technology known as Field Assisted Sintering Technology (FAST) to fabricate lightweight material with enhanced radiation shielding strength to safeguard humans and electronics suitable for next generation space exploration missions. The base materials we investigated were aluminum (Al), the current standard material for space hardware, and Ultra-High Molecular Weight Polyethylene (UHMWPE), which has high hydrogen content and resistance to nuclear reaction from neutrons, making it a good shielding material for both gamma radiation and particles. UHMWPE also has high resistance to corrosive chemicals, extremely low moisture sensitivity, very low coefficient of friction, and high resistance to abrasion. We reinforced the base materials by adding high density (ie, high atomic weight) metallic material into the composite. These filler materials included: boron carbide (B4C), tungsten (W), tungsten carbide (WC) and gadolinium (Gd).

Methods for Producing High-Performance Silicon Carbide Fibers, Architectural Preforms, and High-Temperature Composite Structures

NASA Technical Reports Server (NTRS)

Yun, Hee-Mann (Inventor); DiCarlo, James A. (Inventor)

2014-01-01

Methods are disclosed for producing architectural preforms and high-temperature composite structures containing high-strength ceramic fibers with reduced preforming stresses within each fiber, with an in-situ grown coating on each fiber surface, with reduced boron within the bulk of each fiber, and with improved tensile creep and rupture resistance properties tier each fiber. The methods include the steps of preparing an original sample of a preform formed from a pre-selected high-strength silicon carbide ceramic fiber type, placing the original sample in a processing furnace under a pre-selected preforming stress state and thermally treating the sample in the processing furnace at a pre-selected processing temperature and hold time in a processing gas having a pre-selected composition, pressure, and flow rate. For the high-temperature composite structures, the method includes additional steps of depositing a thin interphase coating on the surface of each fiber and forming a ceramic or carbon-based matrix within the sample.

Effects of Electric Discharge Plasma Treatment on the Thermal Conductivity of Polymer-Metal Nitride/Carbide Composites

NASA Astrophysics Data System (ADS)

Parali, Levent; Kurbanov, Mirza A.; Bayramov, Azad A.; Tatardar, Farida N.; Sultanakhmedova, Ramazanova I.; Xanlar, Huseynova Gulnara

2015-11-01

High-density polymer composites with semiconductor or dielectric fillers such as aluminum nitride (AIN), aluminum oxide (Al2O3), titanium carbide (TiC), titanium nitride (TiN), boron nitride (BN), silicon nitride (Si3N4), and titanium carbonitride (TiCN) were prepared by the hot pressing method. Each powder phase of the composites was exposed to an electric discharge plasma process before composite formation. The effects of the electric discharge plasma process and the filler content (volume fraction) on the thermal conductivity, volt-ampere characteristics, thermally stimulated depolarization current, as well as electrical and mechanical strength were investigated. The results of the study indicate that, with increasing filler volume fraction, the thermal conductivity of the samples also increased. Furthermore, the thermal conductivity, and electrophysical and mechanical properties of the high-density polyethylene + 70% BN composite modified using the electric discharge plasma showed improvement when compared with that without electric discharge plasma treatment.

Alternative Process for Manufacturing of Thin Layers of Boron for Neutron Measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auge, Gregoire; Partyka, Stanislas; Guerard, Bruno

Due to the worldwide shortage of helium 3, Boron-lined proportional counters are developed intensively by several groups. Up to now, thin boron containing layers for neutron detectors are essentially produced by sputtering of boron carbide (B{sub 4}C). This technology provides high quality films but it is slow and expensive. Our paper describes a novel and inexpensive technology for producing boron layers. This technology is based on chemical synthesis of boron 10 nanoparticles, and on electrophoretic deposition of these particles on metallic plates, or on metallic pieces with more complex shapes. The chemical synthesis consists in: - Heating boron 10 withmore » lithium up to 700 deg. C under inert atmosphere: an intermetallic compound, LiB, is produced; - Hydrolysing this intermetallic compound: LiB + H{sub 2}O → B + Li{sup +} + OH{sup -} + 1/2H{sub 2}, where B is under the form of nanoparticles; - Purifying the suspension of boron nanoparticles in water, from lithium hydroxide, by successive membrane filtrations; - Evaporating the purified suspension, in order to get a powder of nanoparticles. The obtained nanoparticles have size around 300 nm, with a high porosity, of about 50%. This particle size is equivalent to about 150 nm massive particles. The nanoparticles are then put into suspension in a specific solvent, in order to perform deposition on metallic surfaces, by electrophoretic method. The solvent is chosen so that it is not electrolysed even under voltages of several tens of volts. An acid is dissolved into the solvent, so that the nanoparticles are positively charged. Deposition is performed on the cathode within about 10 min. The cathode could be an aluminium plate, or a nickel coated aluminium plate. Homogeneous deposition may also be performed on complex shapes, like grids in a Multigrid detector. A large volume of pieces, can be coated with a Boron-10 film in a few hours. The thickness of the layer can be adjusted according to the required neutron detection characteristics, between 0,5 to 5 μm (equivalent to 0,25 to 2.5 massive layer). The thickness is homogenous within a ±20% range. The layer is an almost pure {sup 10}B layer (90%). The ratio of the amount of deposed boron 10 to the amount of raw boron 10 used is more than 80%. Hence, another advantage of this technique is that Boron 10 will be deposited on the cathodes only, without loss of this expensive material. 2 grids of a Multi-Grid detector have been coated with pure Boron by using this technique. The film structure has been analysed with a microscope and the detector has been tested on a monochromatic neutron beam line. Preliminary results will be shown. (authors)« less

Effects of Oxidation on Oxidation-Resistant Graphite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Windes, William; Smith, Rebecca; Carroll, Mark

2015-05-01

The Advanced Reactor Technology (ART) Graphite Research and Development Program is investigating doped nuclear graphite grades that exhibit oxidation resistance through the formation of protective oxides on the surface of the graphite material. In the unlikely event of an oxygen ingress accident, graphite components within the VHTR core region are anticipated to oxidize so long as the oxygen continues to enter the hot core region and the core temperatures remain above 400°C. For the most serious air-ingress accident which persists over several hours or days the continued oxidation can result in significant structural damage to the core. Reducing the oxidationmore » rate of the graphite core material during any air-ingress accident would mitigate the structural effects and keep the core intact. Previous air oxidation testing of nuclear-grade graphite doped with varying levels of boron-carbide (B4C) at a nominal 739°C was conducted for a limited number of doped specimens demonstrating a dramatic reduction in oxidation rate for the boronated graphite grade. This report summarizes the conclusions from this small scoping study by determining the effects of oxidation on the mechanical strength resulting from oxidation of boronated and unboronated graphite to a 10% mass loss level. While the B4C additive did reduce mechanical strength loss during oxidation, adding B4C dopants to a level of 3.5% or more reduced the as-fabricated compressive strength nearly 50%. This effectively minimized any benefits realized from the protective film formed on the boronated grades. Future work to infuse different graphite grades with silicon- and boron-doped material as a post-machining conditioning step for nuclear components is discussed as a potential solution for these challenges in this report.« less

Surface Design and Engineering Toward Wear-Resistant, Self-Lubricant Diamond Films and Coatings. Chapter 10

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1999-01-01

This chapter describes three studies on the surface design, surface engineering, and tribology of chemical-vapor-deposited (CVD) diamond films and coatings toward wear-resistant, self-lubricating diamond films and coatings. Friction mechanisms and solid lubrication mechanisms of CVD diamond are stated. Effects of an amorphous hydrogenated carbon on CVD diamond, an amorphous, nondiamond carbon surface layer formed on CVD diamond by carbon and nitrogen ion implantation, and a materials combination of cubic boron nitride and CVD diamond on the adhesion, friction, and wear behaviors of CVD diamond in ultrahigh vacuum are described. How surface modification and the selected materials couple improved the tribological functionality of coatings, giving low coefficient of friction and good wear resistance, is explained.

The circumstellar envelope of the C-rich post-AGB star HD 56126

NASA Astrophysics Data System (ADS)

Hony, S.; Tielens, A. G. G. M.; Waters, L. B. F. M.; de Koter, A.

2003-04-01

We present a detailed study of the circumstellar envelope of the post-asymptotic giant branch ``21 mu m object'' HD 56126. We build a detailed dust radiative transfer model of the circumstellar envelope in order to derive the dust composition and mass, and the mass-loss history of the star. To model the emission of the dust we use amorphous carbon, hydrogenated amorphous carbon, magnesium sulfide and titanium carbide. We present a detailed parametrisation of the optical properties of hydrogenated amorphous carbon as a function of H/C content. The mid-infrared imaging and spectroscopy is best reproduced by a single dust shell from 1.2 to 2.6'' radius around the central star. This shell originates from a short period during which the mass-loss rate exceeded 10-4 Msun/yr. We find that the strength of the ``21'' mu m feature poses a problem for the TiC identification. The low abundance of Ti requires very high absorption cross-sections in the ultraviolet and visible wavelength range to explain the strength of the feature. Other nano-crystalline metal carbides should be considered as well. We find that hydrogenated amorphous carbon in radiative equilibrium with the local radiation field does not reach a high enough temperature to explain the strength of the 3.3-3.4 and 6-9 mu m hydrocarbon features relative to the 11-17 mu m hydrocarbon features. We propose that the carriers of these hydrocarbon features are not in radiative equilibrium but are transiently heated to high temperature. We find that 2 per cent of the dust mass is required to explain the strength of the ``30'' mu m feature, which fits well within the measured atmospheric abundance of Mg and S. This further strengthens the MgS identification of the ``30'' mu m feature. Based on observations taken at the European Southern Observatory, La Silla, Chile and observation obtained with ISO, an ESA project with instruments funded by ESA Member states (especially the PI countries: France, Germany, The Netherlands and the UK) with the participation of ISAS and NASA.