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Sample records for amorphous indium-gallium-zinc oxide

  1. Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

    NASA Astrophysics Data System (ADS)

    Zan, Hsiao-Wen; Chen, Wei-Tsung; Hsueh, Hsiu-Wen; Kao, Shih-Chin; Ku, Ming-Che; Tsai, Chuang-Chuang; Meng, Hsin-Fei

    2010-11-01

    This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.

  2. Highly bendable characteristics of amorphous indium-gallium-zinc-oxide transistors embedded in a neutral plane

    NASA Astrophysics Data System (ADS)

    Park, Chang Bum; Na, HyungIl; Yoo, Soon Sung; Park, Kwon-Shik

    2015-11-01

    The electromechanical response of an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) fabricated on a polyimide substrate was investigated as a function of the neutral axis location and strain history of the bending system. Here, we demonstrate the pronounced bending characteristics of a-IGZO TFTs and their backplane under extreme mechanical strain when they are embedded in a neutral plane (NP). After being subjected to tensile stress, the devices positioned near the NP were observed to function well against a cyclic bending stress of 2 mm radius with 100,000 times, while TFTs farther from the neutral surface exhibited modified electrical properties.

  3. Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Wang, Wei-Hsiang; Lyu, Syue-Ru; Heredia, Elica; Liu, Shu-Hao; Jiang, Pei-hsun; Liao, Po-Yung; Chang, Ting-Chang; Chen, Hua-Mao

    2017-01-01

    We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

  4. Deep Subgap Feature in Amorphous Indium Gallium Zinc Oxide. Evidence Against Reduced Indium

    SciTech Connect

    Sallis, Shawn; Quackenbush, Nicholas F.; Williams, Deborah S.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.

    2015-01-14

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. In spite of the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. We present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states.

  5. Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

    SciTech Connect

    Choi, Seung-Ha; Jung, Woo-Shik; Park, Jin-Hong

    2012-11-19

    In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide ({alpha}-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R{sub s} measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the {alpha}-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in {alpha}-IGZO was dramatically increased, contributing to the decrease of resistivity ({rho}) from 1.96 {Omega} cm (as-deposited {alpha}-IGZO) to 1.33 Multiplication-Sign 10{sup -3}{Omega} cm (350 Degree-Sign C annealed {alpha}-IGZO).

  6. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Direct Transfer Printing

    NASA Astrophysics Data System (ADS)

    Adachi, Susumu; Okamura, Shoichi

    2010-10-01

    This letter describes the fabrication of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) by direct transfer printing. An a-IGZO layer and a silicon dioxide (SiO2) layer were sequentially sputtered on a poly(dimethylsiloxane) (PDMS) stamp; the stamp was then pressed onto a glass substrate on which a gate metal had been previously deposited. Then, a-IGZO/SiO2 layers were successfully transferred by simply releasing the stamp from the substrate; a bottom-gate TFT was finally constructed. The measured current-voltage characteristics exhibited good field-effect mobility exceeding 10 cm2 V-1 s-1. The on/off current ratio and subthreshold slope were 4×105 and 0.86 V/decade, respectively.

  7. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    PubMed

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

  8. Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

    NASA Astrophysics Data System (ADS)

    Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fangfang; Xu, Qingyu; Ou, Huiling; Zhang, Rong; Zheng, Youdou

    2012-06-01

    The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) are studied under monochromatic light illumination. It is found that as the wavelength of incident light reduces from 750 nm to 450 nm, the threshold voltage of the illuminated TFT shows a continuous negative shift, which is caused by photo-excitation of trapped electrons at the channel/dielectric interface. Meanwhile, an increase of the sub-threshold swing (SS) is observed when the illumination wavelength is below 625 nm (˜2.0 eV). The SS degradation is accompanied by a simultaneous increase of the field effect mobility (μFE) of the TFT, which then decreases at even shorter wavelength beyond 540 nm (˜2.3 eV). The variation of SS and μFE is explained by a physical model based on generation of singly ionized oxygen vacancies (Vo+) and double ionized oxygen vacancies (Vo2+) within the a-IGZO active layer by high energy photons, which would form trap states near the mid-gap and the conduction band edge, respectively.

  9. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    NASA Astrophysics Data System (ADS)

    Arora, H.; Malinowski, P. E.; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm2 at a bias voltage of -2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C61-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 1012 Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiOx as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  10. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    SciTech Connect

    Arora, H.; Malinowski, P. E. Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  11. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  12. Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Zan, Hsiao-Wen; Li, Chang-Hung; Yeh, Chun-Cheng; Dai, Ming-Zhi; Meng, Hsin-Fei; Tsai, Chuang-Chuang

    2011-06-01

    An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a-IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a-IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a-IGZO TFT technology.

  13. Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.

    PubMed

    Wang, Jian-Xun; Hyung, Gun Woo; Li, Zhao-Hui; Son, Sung-Yong; Kwon, Sang Jik; Kim, Young Kwan; Cho, Eou Sik

    2012-07-01

    In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).

  14. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

    NASA Astrophysics Data System (ADS)

    Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun

    2016-08-01

    The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>105 s), good endurance (>106 cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

  15. Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2014-04-07

    We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.

  16. Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

    NASA Astrophysics Data System (ADS)

    Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

    2013-04-01

    It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

  17. Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

    PubMed

    Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

    2016-08-10

    We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics.

  18. Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

    NASA Astrophysics Data System (ADS)

    Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2016-03-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

  19. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    SciTech Connect

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  20. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    SciTech Connect

    Jo, Kwang-Won; Cho, Won-Ju

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  1. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2015-06-21

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  2. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Qian, Hui-Min; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Tang, Lan-Feng; Zhou, Dong; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Liao; Huang, Xiao-Ming

    2015-07-01

    The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress = 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

  3. Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

    NASA Astrophysics Data System (ADS)

    Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

    2016-05-01

    In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

  4. Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

    NASA Astrophysics Data System (ADS)

    Yabuta, H.; Kaji, N.; Shimada, M.; Aiba, T.; Takada, K.; Omura, H.; Mukaide, T.; Hirosawa, I.; Koganezawa, T.; Kumomi, H.

    2014-06-01

    We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

  5. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics

    NASA Astrophysics Data System (ADS)

    Suresh, Arun

    The ability to make electronic devices, that are transparent to visible and near infrared wavelength, is a relatively new field of research in the development of the next generation of optoelectronic devices. A new class of inorganic thin-film transistor (TFT) channel material based on amorphous oxide semiconductors, that show high carrier mobility and high visual transparency, is being researched actively. The purpose of this dissertation is to develop amorphous oxide semiconductors by pulsed laser deposition, show their suitability for TFT applications and demonstrate other classes of devices such as non-volatile memory elements and integrated circuits such as ring oscillators and active matrix pixel elements. Indium gallium zinc oxide (IGZO) is discussed extensively in this dissertation. The influence of several deposition parameters is explored and oxygen partial pressure during deposition is found to have a profound effect on the electrical and optical characteristics of the IGZO films. By optimizing the deposition conditions, IGZO TFTs exhibit excellent electrical properties, even without any intentional annealing. This attribute along with the amorphous nature of the material also makes IGZO TFTs compatible with flexible substrates opening up various applications. IGZO TFTs with saturation field effect mobility of 12--16 cm 2 V-1 s-1 and subthreshold voltage swing of <200 mV decade-1 have been fabricated. By varying the oxygen partial pressure during deposition the conductivity of the channel was controlled to give a low off-state current ˜10 pA and a drain current on/off ratio of >1 x 108. Additionally, the effects of the oxygen partial pressure and the thickness of the semiconductor layer, the choice of the gate dielectric material and the device channel length on the electrical characteristics of the TFTs are explored. To evaluate IGZO TFT electrical stability, constant voltage bias stress measurements were carried out. The observed logarithmic

  6. Study on interface characteristics in amorphous indium-gallium-zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

    NASA Astrophysics Data System (ADS)

    Wu, Chenfei; Huang, Xiaoming; Lu, Hai; Yu, Guang; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2015-07-01

    In this work, the interface properties of amorphous indium-gallium-zinc oxide thin film transistors annealed at different temperatures ranging from 150 to 250 °C are studied by temperature dependent mobility and low-frequency noise (LFN) characterizations. The dominant scattering mechanism for carrier transport is found to be Coulomb scattering based on gate bias and temperature dependent mobility measurement. Meanwhile, as the annealing temperature increases, the dominant mechanism of LFN within the device channel varies from carrier number fluctuation to carrier mobility fluctuation. The border trap density as well as the distribution properties of charged border traps is deduced. The present results suggest that annealing at higher temperature has a more remarkable effect on removing deeper border traps than traps closer to the channel/dielectric interface.

  7. Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

    NASA Astrophysics Data System (ADS)

    Kim, Joonwoo; Jeong, Soon Moon; Jeong, Jaewook

    2015-11-01

    We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 µm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

  8. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  9. Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

    NASA Astrophysics Data System (ADS)

    Gwang Um, Jae; Mativenga, Mallory; Migliorato, Piero; Jang, Jin

    2012-09-01

    The evolution with time of interface trap density and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs), for negative-bias-under-illumination-stress (NBIS), is traced. Based on the combined analysis of TFT current-voltage and capacitance-voltage characteristics, position of Fermi energy, flat band voltage, interface trap density, and gap state density per unit energy are investigated as function of NBIS time and applied gate voltage. These key parameters help to identify the degradation phenomena responsible for the negative threshold voltage shift caused by NBIS. In particular, the interface trap density becomes more positive; from 0.03 × 1011/cm2 to 0.65 × 1011/cm2, while the gap trap density per unit energy also increases after NBIS, supporting defect creation in the bulk and build-up of positive charge at the gate insulator/active-layer interface as the mechanism responsible for NBIS instability.

  10. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Park, Jin-Seong; Kim, Tae-Woong; Stryakhilev, Denis; Lee, Jae-Sup; An, Sung-Guk; Pyo, Yong-Shin; Lee, Dong-Bum; Mo, Yeon Gon; Jin, Dong-Un; Chung, Ho Kyoon

    2009-07-01

    We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R =3 mm under tension and compression without any performance degradation.

  11. Electrical features of an amorphous indium-gallium-zinc-oxide film transistor using a double active matrix with different oxygen contents

    NASA Astrophysics Data System (ADS)

    Koo, Ja Hyun; Kang, Tae Sung; Hong, Jin Pyo

    2012-05-01

    The electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) are systematically studied using a double a-IGZO active layer that is composed of a-IGZO x (oxygen-ion-poor region) and a-IGZO y (oxygen-ion-rich-region). An active layer is designed to have a serially-stacked bi-layer matrix with different oxygen contents, providing the formation of different electron conduction channels. Two different oxygen contents in the active layer are obtained by varying the O2 partial pressure during sputtering. The a-IGZO TFT based on a double active layer exhibits a high mobility of 9.1 cm2/Vsec, a threshold voltage (V T ) of 16.5 V, and ΔV T shifts of less than 1.5 V under gate voltage stress. A possible electrical sketch for the double active layer channel is also discussed.

  12. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  13. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    NASA Astrophysics Data System (ADS)

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-01

    In this study, the Al2O3 nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm2/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  14. Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

    NASA Astrophysics Data System (ADS)

    Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

    2014-11-01

    We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

  15. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  16. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    NASA Astrophysics Data System (ADS)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  17. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    SciTech Connect

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  18. Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N{sub 2}O plasma treatment

    SciTech Connect

    Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Geng-Wei; Tai, Ya-Hsiang; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

    2013-11-28

    An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N{sub 2}O plasma treatment. Experimental verification shows that the N{sub 2}O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N{sub 2}O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N{sub 2}O plasma treatment is much lower than that in as-fabricated devices. The N{sub 2}O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

  19. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    NASA Astrophysics Data System (ADS)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-01

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from -15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e-/2e-), peroxide (O22-) formation or conversion of ionized interstitial (Oi2-) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows -2.7 V shift at VTG = -15 V, which gradually decreases to -0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22-/Oi) and/or hole trapping in the a-IGZO /interfaces.

  20. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    PubMed Central

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites. PMID:26972476

  1. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    SciTech Connect

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  2. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    NASA Astrophysics Data System (ADS)

    Flewitt, A. J.; Powell, M. J.

    2014-04-01

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 106-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions

  3. Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

    SciTech Connect

    Watanabe, Ken; Lee, Dong-Hee; Sakaguchi, Isao; Haneda, Hajime; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo; Ohashi, Naoki

    2013-11-11

    An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

  4. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

    PubMed

    Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

    2012-07-10

    An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

  5. Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kwon, Sung-Nam; Na, Seok-In; Kim, Sun-Kyung; Yoo, Young-Zo; Im, Hyeong-Seop; Seong, Tae-Yeon

    2017-04-01

    Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm-3 and 7.96 × 1021 cm-3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.

  6. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    SciTech Connect

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  7. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    SciTech Connect

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin

    2014-08-04

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  8. A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si1‑ x O2 Gate dielectric and improved electrical and hysteresis performance

    NASA Astrophysics Data System (ADS)

    Hung, Chien-Hsiung; Wang, Shui-Jinn; Liu, Pang-Yi; Wu, Chien-Hung; Wu, Nai-Sheng; Yan, Hao-Ping; Lin, Tseng-Hsing

    2017-04-01

    The use of co-sputtered zirconium silicon oxide (Zr x Si1‑ x O2) gate dielectrics to improve the gate controllability of amorphous indium gallium zinc oxide (α-IGZO) thin-film transistors (TFTs) through a room-temperature fabrication process is proposed and demonstrated. With the sputtering power of the SiO2 target in the range of 0–150 W and with that of the ZrO2 target kept at 100 W, a dielectric constant ranging from approximately 28.1 to 7.8 is obtained. The poly-structure formation immunity of the Zr x Si1‑ x O2 dielectrics, reduction of the interface trap density suppression, and gate leakage current are examined. Our experimental results reveal that the Zr0.85Si0.15O2 gate dielectric can lead to significantly improved TFT subthreshold swing performance (103 mV/dec) and field effect mobility (33.76 cm2 V‑1 s‑1).

  9. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Park, Sang-Hee Ko; Choi, Kyung Cheol

    2016-05-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al2O3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔVth) was 0 V even after a PBS time (tstress) of 3000 s under a gate voltage (VG) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔVth value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔVth values resulting from PBS quantitatively, the average oxide charge trap density (NT) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher NT resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of NT near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  10. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    SciTech Connect

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk E-mail: drlife@kookmin.ac.kr

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  11. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz

    NASA Astrophysics Data System (ADS)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  12. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    SciTech Connect

    Guo, Li Qiang Ding, Jian Ning; Huang, Yu Kai; Zhu, Li Qiang

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  13. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-02-01

    The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

  14. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  15. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Du Ahn, Byung; Shin, Hyun Soo; Kim, Hyun Jae; Park, Jin-Seong; Jeong, Jae Kyeong

    2008-11-01

    We proposed a homojunctioned amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a-IGZO channel layer using Ar and H2 plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H2 plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm2/V s, an on/off ratio of 1.2×107, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.

  16. Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2 Plasma Treatment on the SiNx Gate Insulator

    NASA Astrophysics Data System (ADS)

    Kim, Woong-Sun; Moon, Yeon-Keon; Lee, Sih; Kang, Byung-Woo; Kim, Kyung-Taek; Lee, Je-Hun; Kim, Joo-Han; Ahn, Byung-Du; Park, Jong-Wan

    2010-08-01

    In this study, we investigated the role of processing parameters on the electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) fabricated using DC magnetron sputtering at room temperature. Processing parameters including the oxygen partial pressure, annealing temperature, and channel thickness have a great influence on TFT performance and better devices are obtained at a low oxygen partial pressure, annealing at 200 °C, and a low channel thickness. We attempted to improve the a-IGZO TFT performance and stability under a gate bias stress using O2 plasma treatment. With an O2 plasma treated gate insulator, remarkable properties including excellent bias stability as well as a field effect mobility (µFE) of 11.5 cm2 V-1 s-1, a subthreshold swing (S) of 0.59 V/decade, a turn-on voltage (VON) of -1.3 V, and an on/off current ratio (ION/IOFF) of 105 were achieved.

  17. Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

    SciTech Connect

    Yamada, Kazuo; Takeda, Satoshi; Nomura, Kenji; Abe, Katsumi; Hosono, Hideo

    2014-09-29

    The effect of an ambient atmosphere with a positive bias constant current stress (CCS) and a negative bias illumination stress (NBIS) on the stability of amorphous In-Ga-Zn-O thin film transistors (TFTs) is examined by utilizing a glass-hermetic-sealant with a moisture permeability of less than 10{sup −6} g/m{sup 2} · day. In the CCS test, the threshold voltage shift (ΔV{sub th}) was remarkably suppressed in the glass-sealed TFTs. The unsealed and resin-sealed TFTs exhibited large ΔV{sub th} values. During the NBIS tests, the glass-sealed TFTs had almost the same negative ΔV{sub th} as the unsealed and resin sealed TFTs. Among the different TFTs, no significant differences were observed in the threshold voltage, the subthreshold swing and the saturation mobility as a function of the photon energy. It is concluded that ambient molecules were the primary origin of the instability of the ΔV{sub th}, induced by a CCS, but they were not related to the NBIS instability. The major role of the effective passivation layers in the NBIS test was not to simply block out the ambient effects, but to reduce the extra density of states at/near the surface of the back channel.

  18. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  19. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Lacour, S. P.

    2016-06-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  20. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  1. Blade-coated sol-gel indium-gallium-zinc-oxide for inverted polymer solar cell

    NASA Astrophysics Data System (ADS)

    Lee, Yan-Huei; Tsai, Pei-Ting; Chang, Chia-Ju; Meng, Hsin-Fei; Horng, Sheng-Fu; Zan, Hsiao-Wen; Lin, Hung-Cheng; Liu, Hung-Chuan; Tseng, Mei-Rurng; Yeh, Han-Cheng

    2016-11-01

    The inverted organic solar cell was fabricated by using sol-gel indium-gallium-zinc-oxide (IGZO) as the electron-transport layer. The IGZO precursor solution was deposited by blade coating with simultaneous substrate heating at 120 °C from the bottom and hot wind from above. Uniform IGZO film of around 30 nm was formed after annealing at 400 °C. Using the blend of low band-gap polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt- (4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-C-T) and [6,6]-Phenyl C71 butyric acid methyl ester ([70]PCBM) as the active layer for the inverted organic solar cell, an efficiency of 6.2% was achieved with a blade speed of 180 mm/s for the IGZO. The efficiency of the inverted organic solar cells was found to depend on the coating speed of the IGZO films, which was attributed to the change in the concentration of surface OH groups. Compared to organic solar cells of conventional structure using PBDTTT-C-T: [70]PCBM as active layer, the inverted organic solar cells showed significant improvement in thermal stability. In addition, the chemical composition, as well as the work function of the IGZO film at the surface and inside can be tuned by the blade speed, which may find applications in other areas like thin-film transistors.

  2. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    SciTech Connect

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  3. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.

    PubMed

    Park, Soyeon; Bang, Seokhwan; Lee, Seungjun; Park, Joohyun; Ko, Youngbin; Jeon, Hyeongtag

    2011-07-01

    In this study, the effects of different annealing conditions (air, O2, N2, vacuum) on the chemical and electrical characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFT) were investigated. The contact resistance and interface properties between the IGZO film and the gate dielectric improved after an annealing treatment. However, the chemical bonds in the IGZO bulk changed under various annealing atmospheres, which, in turn, altered the characteristics of the TFTs. The TFTs annealed in vacuum and N2 ambients exhibited undesired switching properties due to the high carrier concentration (>10(17) cm(-3)) of the IGZO active layer. In contrast, the IGZO TFTs annealed in air and oxygen ambients displayed clear transfer characteristics due to an adequately adjusted carrier concentration in the operating range of the TFT. Such an optimal carrier concentration arose through the stabilization of unstable chemical bonds in the IGZO film. With regard to device performance, the TFTs annealed in O2 and air exhibited saturation mobility values of 8.29 and 7.54 cm2/Vs, on-off ratios of 7.34 x 10(8) and 3.95 x 10(8), and subthreshold swing (SS) values of 0.23 and 0.19 V/decade, respectively. Therefore, proper annealing ambients contributed to internal modifications in the IGZO structure and led to an enhancement in the oxidation state of the metal. As a result, defects such as oxygen vacancies were eliminated. Oxygen annealing is thus effective for controlling the carrier concentration of the active layer, decreasing electron traps, and enhancing TFT performance.

  4. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    PubMed

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  5. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  6. Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement

    NASA Astrophysics Data System (ADS)

    Zan, Hsiao-Wen; Chen, Wei-Tsung; Yeh, Chung-Cheng; Hsueh, Hsiu-Wen; Tsai, Chuang-Chuang; Meng, Hsin-Fei

    2011-04-01

    In this study, we propose a floating dual gate (FDG) indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (ϕ) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (μ), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (Vth) from -5.0 to +7.9 V without an additional back gate power supply.

  7. Amorphous indium-gallium-zinc-oxide thin-film transistors using organic-inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

    NASA Astrophysics Data System (ADS)

    Hsu, Chao-Jui; Chang, Ching-Hsiang; Chang, Kuei-Ming; Wu, Chung-Chih

    2017-01-01

    We investigated the deposition of high-performance organic-inorganic hybrid dielectric films by low-temperature (close to room temperature) inductively coupled plasma chemical vapor deposition (ICP-CVD) with hexamethyldisiloxane (HMDSO)/O2 precursor gas. The hybrid films exhibited low leakage currents and high breakdown fields, suitable for thin-film transistor (TFT) applications. They were successfully integrated into the gate insulator, the etch-stop layer, and the passivation layer for bottom-gate staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs having the etch-stop configuration. With the double-active-layer configuration having a buffer a-IGZO back-channel layer grown in oxygen-rich atmosphere for better immunity against plasma damage, the etch-stop-type bottom-gate staggered a-IGZO TFTs with good TFT characteristics were successfully demonstrated. The TFTs showed good field-effect mobility (μFE), threshold voltage (V th), subthreshold swing (SS), and on/off ratio (I on/off) of 7.5 cm2 V-1 s-1, 2.38 V, 0.38 V/decade, and 2.2 × 108, respectively, manifesting their usefulness for a-IGZO TFTs.

  8. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    PubMed Central

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-01-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully. PMID:27725695

  9. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-10-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

  10. Fabrication Process Assessment and Negative Bias Illumination Stress Study of Indium-Gallium-Zinc Oxide and Zinc-Tin Oxide Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Hoshino, Ken

    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs, significantly improving the NBIS stability. NBIS instabilities in unpassivated TFTs are attributed to an NBIS-induced desorption of chemisorbed oxygen from the channel layer top surface, exposing surface oxygen vacancies. A ZTSO layer protects the channel layer top surface from adsorbed gas interactions and also appears to reduce the density of oxygen vacancies. The best device architectures investigated with respect to TFT electrical performance are found to be staggered with aluminum electrodes for unpassivated TFTs and coplanar with ITO electrodes for ZTSO-passivated TFTs. Annealing in wet-O2 is not found to be effective for improving the performance of IGZO or ZTO TFTs or for reducing the post-deposition annealing temperature.

  11. Indium gallium zinc oxide layer used to decrease optical reflection loss at intermediate adhesive region for fabricating mechanical stacked multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Sameshima, Toshiyuki; Nimura, Takeshi; Sugawara, Takashi; Ogawa, Yoshihiro; Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko

    2017-01-01

    Reduction of optical reflection loss is discussed in three mechanical stacked samples: top crystalline silicon and bottom crystalline germanium substrates, top crystalline GaAs and bottom crystalline silicon substrates, and top crystalline GaP and bottom crystalline silicon substrates using an epoxy-type adhesive with a reflective index of 1.47. Transparent conductive Indium gallium zinc oxide (IGZO) layers with a refractive index of 1.85 were used as antireflection layers. IGZO layers were formed on the bottom surface of the top substrate and the top surface of the bottom substrate of the three stacked samples with thicknesses of 188, 130, and 102 nm. The insertion of IGZO layers decreased the optical reflectivity of the stacked samples. The IGZO layers provided high effective optical absorbency of bottom substrates of 0.925, 0.943, and 0.931, respectively, for light wavelength regions for light in which the top substrates were transparent and the bottom substrates were opaque.

  12. The effect of a zinc-tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

    2014-09-01

    We investigated the bias stress stability of solution-processed indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) using zinc-tin-oxide (ZTO) as the etch-stopper layer, the so-called dual-active-layered ZTO/IGZO TFT (DALZI TFT). The DALZI TFT can use a low-cost back-channel-etch structure because of the high chemical stability of the upper ZTO layer. The DALZI TFT exhibited only a threshold voltage shift of -1.86 V under negative bias illumination stress (NBIS) conditions (stress time = 1000 s), while the unpassivated IGZO TFT suffered from a threshold voltage shift of -19.59 V under NBIS conditions (stress time = 1000 s). The superior bias stress stability of the DALZI TFT is attributed not only to the densification effect by the multi-stacking process but also to the lower sensitivity to ambient gases (e.g., oxygen and water vapour) due to the low oxygen vacancy in the upper ZTO layer.

  13. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    NASA Astrophysics Data System (ADS)

    Kumar, Narendra; Kumar, Jitendra; Panda, Siddhartha

    2015-06-01

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  14. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    SciTech Connect

    Kumar, Narendra; Kumar, Jitendra; Panda, Siddhartha

    2015-06-15

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO{sub 2}/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 {sup o}C in N{sub 2} ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 {sup o}C. The increased pH sensitivity with the film annealed at 400 {sup o}C in N{sub 2} gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 {sup o}C was attributed to defects in the films as well as the induced traps at the IGZO/SiO{sub 2} interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  15. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Gelinck, G. H.; van Breemen, A. J. J. M.; Cobb, B.

    2015-03-01

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  16. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    SciTech Connect

    Gelinck, G. H.; Breemen, A. J. J. M. van; Cobb, B.

    2015-03-02

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  17. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    NASA Astrophysics Data System (ADS)

    Lee, Hyoung-Rae; Park, Jea-Gun

    2014-10-01

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO X distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O2. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  18. Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

    NASA Astrophysics Data System (ADS)

    Jeong, Jaewook

    2016-11-01

    In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

  19. Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

    NASA Astrophysics Data System (ADS)

    Jeong, Jaewook; Kim, Joonwoo; Kim, Donghyun; Jeon, Heonsu; Jeong, Soon Moon; Hong, Yongtaek

    2016-08-01

    In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

  20. First-principles study of native point defects in crystalline indium gallium zinc oxide

    NASA Astrophysics Data System (ADS)

    Omura, Hideyuki; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2009-05-01

    Materials in In-Ga-Zn-O system are promising candidates for channel layers of high-performance thin-film transistors (TFTs). We investigated the atomic arrangements and the electronic structures of crystalline InGaZnO4 containing point defects such as oxygen vacancy (VO), interstitial hydrogen (Hi), and interstitial oxygen (Oi) by density functional theory (DFT) using a plane-wave pseudopotential method. The calculations for the atomic structure relaxation suggest that Hi bonds to a lattice oxygen (OO), and Oi occupies a split interstitial site [Oi(split)] forming a chemical bond with OO which is similar to O2 molecule, or Oi occupies an octahedral interstitial site [Oi(oct)]. The electronic structure calculations reveal that VO forms fully occupied states around the middle of the DFT band gap, while Hi does not form a defect level in the band gap but raises the Fermi level above the conduction band minimum. Oi(split) forms fully occupied states above the valence band maximum of the defect-free model (VBM0), while Oi(oct) forms both occupied and unoccupied states above the VBM0. It is thus suggested that VO and Oi(split) are electrically inactive for electrons but work as hole traps, Hi acts as a donor, and Oi(oct) is electrically active, trapping both electrons and holes. These observations imply that VO and Oi(split) do not but Hi and Oi(oct) influence electrical properties of the n-channel TFTs based on the In-Ga-Zn-O semiconductor materials.

  1. First principles prediction of amorphous phases using evolutionary algorithms

    NASA Astrophysics Data System (ADS)

    Nahas, Suhas; Gaur, Anshu; Bhowmick, Somnath

    2016-07-01

    We discuss the efficacy of evolutionary method for the purpose of structural analysis of amorphous solids. At present, ab initio molecular dynamics (MD) based melt-quench technique is used and this deterministic approach has proven to be successful to study amorphous materials. We show that a stochastic approach motivated by Darwinian evolution can also be used to simulate amorphous structures. Applying this method, in conjunction with density functional theory based electronic, ionic and cell relaxation, we re-investigate two well known amorphous semiconductors, namely silicon and indium gallium zinc oxide. We find that characteristic structural parameters like average bond length and bond angle are within ˜2% of those reported by ab initio MD calculations and experimental studies.

  2. Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

    SciTech Connect

    Ha, Tae-Jun

    2014-10-15

    We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

  3. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

    DOE PAGES

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

    2016-02-09

    To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

  4. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

    SciTech Connect

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Ovchinnikova, Olga S.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

    2016-02-09

    To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.

  5. High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.

    PubMed

    Benwadih, M; Coppard, R; Bonrad, K; Klyszcz, A; Vuillaume, D

    2016-12-21

    Amorphous, sol-gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm(2)/(V s), as well as a mobility of 7 cm(2)/(V s) on solid substrate (Si/SiO2) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol-gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.

  6. Conduction mechanism in amorphous InGaZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Bhoolokam, Ajay; Nag, Manoj; Steudel, Soeren; Genoe, Jan; Gelinck, Gerwin; Kadashchuk, Andrey; Groeseneken, Guido; Heremans, Paul

    2016-01-01

    We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of temperature. We also show the intrinsic mobility is dependent on temperature due to scattering by ionic impurities or lattice. In solving the Poisson equation to find the surface potential and back potential as a function of gate voltage, we explicitly allow for the back surface to be floating, as is the case for a-IGZO transistors. The parameters for gap states, percolation barriers and intrinsic mobility at room temperature that we extract with this comprehensive model are in good agreement with those extracted in literature with partially-complete models.

  7. AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hwan; Kong, Dongsik; Kim, Sungchul; Jeon, Young Woo; Kim, Yongsik; Kim, Dong Myong; Kwon, Hyuck-In

    2011-09-01

    The degradation of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) inverter operation is investigated under AC pulse stresses. From the extraction of subgap density of states (DOSs), the dominant mechanism of the pulse stress-induced degradation of driver TFT is considered as the increase of acceptor-like deep states, while that of the load TFT is attributed to the increased number of electrons trapped into the interface and/or a-IGZO thin films. We also observe that the rising and falling time of the induced pulse affects each TFT of the inverter in a different manner, and discuss the related mechanism of this phenomenon.

  8. Field-induced activation of metal oxide semiconductor for low temperature flexible transparent electronic device applications

    NASA Astrophysics Data System (ADS)

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony; Haglund, Amada; Ward, Thomas Zac; Mandrus, David; Rack, Philip

    Amorphous metal-oxide semiconductors have been extensively studied as an active channel material in thin film transistors due to their high carrier mobility, and excellent large-area uniformity. Here, we report the athermal activation of amorphous indium gallium zinc oxide semiconductor channels by an electric field-induced oxygen migration via gating through an ionic liquid. Using field-induced activation, a transparent flexible thin film transistor is demonstrated on a polyamide substrate with transistor characteristics having a current ON-OFF ratio exceeding 108, and saturation field effect mobility of 8.32 cm2/(V.s) without a post-deposition thermal treatment. This study demonstrates the potential of field-induced activation as an athermal alternative to traditional post-deposition thermal annealing for metal oxide electronic devices suitable for transparent and flexible polymer substrates. Materials Science and Technology Division, ORBL, Oak Ridge, TN 37831, USA.

  9. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    NASA Astrophysics Data System (ADS)

    Jia, Junjun; Torigoshi, Yoshifumi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2015-01-01

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O2, H2O, and N2O as the reactive gases. Experimental results show that the electrical properties of the N2O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N2O introduction into the deposition process, where the field mobility reach to 30.8 cm2 V-1 s-1, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  10. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  11. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    SciTech Connect

    Tari, Alireza Lee, Czang-Ho; Wong, William S.

    2015-07-13

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  12. Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing

    PubMed Central

    Yoon, Jongwon; Jeong, Yunkyung; Kim, Heeje; Yoo, Seonggwang; Jung, Hoon Sun; Kim, Yonghun; Hwang, Youngkyu; Hyun, Yujun; Hong, Woong-Ki; Lee, Byoung Hun; Choa, Sung-Hoon; Ko, Heung Cho

    2016-01-01

    Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related technology does not seem to be mature because the woven fabric hampers not only the device fabrication process directly on the complex surface but also the transfer printing of ultrathin planar electronic devices. Here we report an indirect method that enables conformal wrapping of surface with arbitrary yet complex shapes. Artificial cilia are introduced in the periphery of electronic devices as adhesive elements. The cilia also play an important role in confining a small amount of glue and damping mechanical stress to maintain robust electronic performance under mechanical deformation. The example of electronic applications depicts the feasibility of cilia for ‘stick-&-play' systems, which provide electronic functions by transfer printing on unconventional complex surfaces. PMID:27248982

  13. Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing

    NASA Astrophysics Data System (ADS)

    Yoon, Jongwon; Jeong, Yunkyung; Kim, Heeje; Yoo, Seonggwang; Jung, Hoon Sun; Kim, Yonghun; Hwang, Youngkyu; Hyun, Yujun; Hong, Woong-Ki; Lee, Byoung Hun; Choa, Sung-Hoon; Ko, Heung Cho

    2016-06-01

    Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related technology does not seem to be mature because the woven fabric hampers not only the device fabrication process directly on the complex surface but also the transfer printing of ultrathin planar electronic devices. Here we report an indirect method that enables conformal wrapping of surface with arbitrary yet complex shapes. Artificial cilia are introduced in the periphery of electronic devices as adhesive elements. The cilia also play an important role in confining a small amount of glue and damping mechanical stress to maintain robust electronic performance under mechanical deformation. The example of electronic applications depicts the feasibility of cilia for `stick-&-play' systems, which provide electronic functions by transfer printing on unconventional complex surfaces.

  14. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Yabuta, Hisato; Sano, Masafumi; Abe, Katsumi; Aiba, Toshiaki; Den, Tohru; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

    2006-09-01

    Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. The conductivity of the a-IGZO films was controlled from ˜10-3to10-6Scm-1 by varying the mixing ratio of sputtering gases, O2/(O2+Ar), from ˜3.1% to 3.7%. The top-gate-type TFTs operated in n-type enhancement mode with a field-effect mobility of 12cm2V-1s-1, an on-off current ratio of ˜108, and a subthreshold gate voltage swing of 0.2Vdecade-1. It is demonstrated that a-IGZO is an appropriate semiconductor material to produce high-mobility TFTs at low temperatures applicable to flexible substrates by a production-compatible means.

  15. Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

    NASA Astrophysics Data System (ADS)

    Gelinck, Gerwin H.; Cobb, Brian; van Breemen, Albert J. J. M.; Myny, Kris

    2015-07-01

    Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these.

  16. Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability

    NASA Astrophysics Data System (ADS)

    Hung, Ming-Chin; Hsiao, Hsia-Tsai; Lin, Wei-Ting; Tu, Chun-Hao; Chang, Jiun-Jye; Chen, Po-Lun

    2011-03-01

    The present five masks bottom gate and staggered amorphous silicon (a-Si) thin-film transistor (TFT) process flow is not suitable for indium-gallium-zinc-oxide (IGZO) TFT because of its vulnerability to post etching process during the source/drain pattern. Bottom gate and coplanar IGZO TFTs were made feasible through the reverse of second (channel layer) and third (source/drain electrodes) masks process flow to avoid etching damage problem. Besides, the post IGZO nitrous oxygen (N2O) plasma treatment was employed to improve the stress instability. On the basis of secondary ion mass spectrometry (SIMS) and X-ray spectroscopy (XPS) results, it is believed that the post N2O plasma treatment passivates the interface states and converts the inhomogeneous and low quality IGZO to the homogeneous and high quality IGZO. In the end, a 5-in. IGZO active-matrix liquid crystal display was demonstrated via five masks bottom gate and coplanar TFT configuration.

  17. Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

    NASA Astrophysics Data System (ADS)

    Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

    2017-03-01

    The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

  18. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Lim, Jun-Hyung; Lee, Je-Hun; Kim, Yong-Sung; Ahn, Byung Du; Kim, Dae Hwan

    2014-10-01

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy VO2+ or peroxide O22- with the increase of EOT. It was also found that the VO2+-related extrinsic factor accounts for 80%-92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O22- related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  19. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    SciTech Connect

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du E-mail: drlife@kookmin.ac.kr; Kim, Yong-Sung

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  20. A Study of Electrical and Optical Stability of GSZO THin Film Transisitors

    DTIC Science & Technology

    2014-01-01

    great interest in amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer due to its promising electrical and photosensitive...a great interest in amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer due to its promising electrical and photosensitive...current ION/OFF ITZO On/off current ratio Indium tin zinc oxide IZO Indium zinc oxide M-OH Metal hydroxides N2 NBIS NBS NT Nitrogen gas

  1. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    PubMed

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

  2. High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

    SciTech Connect

    Ye Yan; Lim, Rodney; White, John M.

    2009-10-01

    Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn{sub 3}N{sub 2}) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm{sup 2} V{sup -1} s{sup -1} for the as-deposited film produced at 50 deg. C and 110 cm{sup 2} V{sup -1} s{sup -1} after annealing at 400 deg. C. In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium-gallium-zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.

  3. Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Vemuri, Rajitha

    This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals

  4. A field effect glucose sensor with a nanostructured amorphous In-Ga-Zn-O network.

    PubMed

    Du, Xiaosong; Li, Yajuan; Herman, Gregory S

    2016-11-03

    Amorphous indium gallium zinc oxide (IGZO) field effect transistors (FETs) are a promising technology for a wide range of electronic applications. Herein, we fabricated and characterized FETs with a nanostructured IGZO network as a sensing transducer. The IGZO was patterned using colloidal lithography and electrohydrodynamic printing, where an 8 μm wide nanostructured close-packed hexagonal IGZO network was obtained. Electrical characterization of the nanostructured IGZO network FET demonstrated a drain-source current on-off ratio of 6.1 × 10(3) and effective electron mobilities of 3.6 cm(2) V(-1) s(-1). The nanostructured IGZO network was functionalized by aminosilane groups with cross-linked glucose oxidase. The devices demonstrated a decrease in drain-source conductance and a more positive VON with increasing glucose concentration. These changes are ascribed to the acceptor-like surface states associated with positively charged aminosilane groups attached to the nanostructured IGZO surface. Continuous monitoring of the drain-source current indicates a stepwise and fully reversible response to glucose concentrations with a short response time. The specific catalytic reaction between the GOx enzyme and glucose eliminates interference from acetaminophen/ascorbic acid. We demonstrate that nanostructured IGZO FETs have improved sensitivity compared to non-nanostructured IGZO for sensing glucose and can be potentially extended to other biosensor technologies.

  5. Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

    SciTech Connect

    Liu, Kuan-Hsien; Chou, Wu-Ching E-mail: wuchingchou@mail.nctu.edu.tw; Chang, Ting-Chang E-mail: wuchingchou@mail.nctu.edu.tw; Chen, Hua-Mao; Tai, Ya-Hsiang; Tsai, Ming-Yen; Hung, Pei-Hua; Chu, Ann-Kuo; Wu, Ming-Siou; Hung, Yi-Syuan; Hsieh, Tien-Yu; Yeh, Bo-Liang

    2014-10-21

    This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I{sub D}-V{sub G} and modulated peak/base pulse time I{sub D}-V{sub D} measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.

  6. Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

    NASA Astrophysics Data System (ADS)

    Park, Ick-Joon; Jeong, Chan-Yong; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok; Song, Sang-Hun; Kwon, Hyuck-In

    2012-10-01

    In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.

  7. Effect of nitrogen addition on the structural, electrical, and optical properties of In-Sn-Zn oxide thin films

    NASA Astrophysics Data System (ADS)

    Jia, Junjun; Torigoshi, Yoshifumi; Suko, Ayaka; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Shigesato, Yuzo

    2017-02-01

    Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In2O3 phase, to a c-axis oriented InN polycrystalline phase, where InN starts to nucleate from an amorphous In2O3 matrix. Whereas, nitrogen addition had no obvious effect on the structure of indium-gallium-zinc oxide (IGZO) films even at a nitrogen flow ratio of 100%. Nitrogen addition also suppressed the formation of oxygen-related vacancies in ITZO films when the nitrogen flow ratio was less than 20%, and higher nitrogen addition led to an increase in carrier density. Moreover, a red-shift in the optical band edge was observed as the nitrogen flow ratio increased, which could be attributed to the generation of InN crystallites. We anticipate that the present findings demonstrating nitrogen-addition induced structural changes can help to understand the environment-dependent instability in amorphous IGZO or ITZO based thin-film transistors (TFTs).

  8. Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory.

    PubMed

    Qian, Shi-Bing; Wang, Yong-Ping; Shao, Yan; Liu, Wen-Jun; Ding, Shi-Jin

    2017-12-01

    For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2 and NH3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 °C substrate temperature and 50 deposition cycles, exhibiting a density of ~1.5 × 10(12) cm(-2) and a small size of 3~4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.

  9. Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Wang, Yong-Ping; Shao, Yan; Liu, Wen-Jun; Ding, Shi-Jin

    2017-02-01

    For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2 and NH3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 °C substrate temperature and 50 deposition cycles, exhibiting a density of 1.5 × 1012 cm-2 and a small size of 3 4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.

  10. Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

    PubMed Central

    Park, Sungjun; Lee, SeYeong; Kim, Chang-Hyun; Lee, Ilseop; Lee, Won-June; Kim, Sohee; Lee, Byung-Geun; Jang, Jae-Hyung; Yoon, Myung-Han

    2015-01-01

    Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 107, and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo. PMID:26271456

  11. Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

    NASA Astrophysics Data System (ADS)

    Park, Sungjun; Lee, Seyeong; Kim, Chang-Hyun; Lee, Ilseop; Lee, Won-June; Kim, Sohee; Lee, Byung-Geun; Jang, Jae-Hyung; Yoon, Myung-Han

    2015-08-01

    Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 107, and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo.

  12. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

    PubMed Central

    2013-01-01

    Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm2 V–1 s–1. We show that it is possible to solution-process these materials at low process temperature (225–200 °C yielding mobilities up to 4.4 cm2 V–1 s–1) and demonstrate a facile “ink-on-demand” process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium. PMID:24511184

  13. Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.

    PubMed

    Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P H; Bedzyk, Michael J; Ferragut, Rafael; Marks, Tobin J; Facchetti, Antonio

    2015-03-17

    Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

  14. Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

    PubMed Central

    Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P. H.; Bedzyk, Michael J.; Ferragut, Rafael; Marks, Tobin J.; Facchetti, Antonio

    2015-01-01

    Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. PMID:25733848

  15. Toward Active-Matrix Lab-On-A-Chip: Programmable Electrofluidic control Enaled by Arrayed Oxide Thin Film Transistors

    SciTech Connect

    Noh, Joo Hyon; Noh, Jiyong; Kreit, Eric; Heikenfeld, Jason; Rack, Philip D

    2012-01-01

    Agile micro- and nano-fluidic control is critical to numerous life science and chemical science synthesis as well as kinetic and thermodynamic studies. To this end, we have demonstrated the use of thin film transistor arrays as an active matrix addressing method to control an electrofluidic array. Because the active matrix method minimizes the number of control lines necessary (m + n lines for the m x n element array), the active matrix addressing method integrated with an electrofluidic platform can be a significant breakthrough for complex electrofluidic arrays (increased size or resolution) with enhanced function, agility and programmability. An amorphous indium gallium zinc oxide (a-IGZO) semiconductor active layer is used because of its high mobility of 1-15 cm{sup 2} V{sup -1} s{sup -1}, low-temperature processing and transparency for potential spectroscopy and imaging. Several electrofluidic functionalities are demonstrated using a simple 2 x 5 electrode array connected to a 2 x 5 IGZO thin film transistor array with the semiconductor channel width of 50 {mu}m and mobility of 6.3 cm{sup 2} V{sup -1} s{sup -1}. Additionally, using the TFT device characteristics, active matrix addressing schemes are discussed as the geometry of the electrode array can be tailored to act as a storage capacitor element. Finally, requisite material and device parameters are discussed in context with a VGA scale active matrix addressed electrofluidic platform.

  16. Toward active-matrix lab-on-a-chip: programmable electrofluidic control enabled by arrayed oxide thin film transistors.

    PubMed

    Noh, Joo Hyon; Noh, Jiyong; Kreit, Eric; Heikenfeld, Jason; Rack, Philip D

    2012-01-21

    Agile micro- and nano-fluidic control is critical to numerous life science and chemical science synthesis as well as kinetic and thermodynamic studies. To this end, we have demonstrated the use of thin film transistor arrays as an active matrix addressing method to control an electrofluidic array. Because the active matrix method minimizes the number of control lines necessary (m + n lines for the m×n element array), the active matrix addressing method integrated with an electrofluidic platform can be a significant breakthrough for complex electrofluidic arrays (increased size or resolution) with enhanced function, agility and programmability. An amorphous indium gallium zinc oxide (a-IGZO) semiconductor active layer is used because of its high mobility of 1-15 cm(2) V(-1) s(-1), low-temperature processing and transparency for potential spectroscopy and imaging. Several electrofluidic functionalities are demonstrated using a simple 2 × 5 electrode array connected to a 2 × 5 IGZO thin film transistor array with the semiconductor channel width of 50 μm and mobility of 6.3 cm(2) V(-1) s(-1). Additionally, using the TFT device characteristics, active matrix addressing schemes are discussed as the geometry of the electrode array can be tailored to act as a storage capacitor element. Finally, requisite material and device parameters are discussed in context with a VGA scale active matrix addressed electrofluidic platform.

  17. David Adler Lectureship Award in the Field of Materials Physics Talk: Novel Nitride and Oxide Electronics

    NASA Astrophysics Data System (ADS)

    Pearton, Stephen

    2011-03-01

    Recent progress in development of GaN-based transistors for gas and bio-sensing applications and amorphous IGZO layers for use thin film transistors (TFTs)on flexible substrates, including paper,will be presented. For the detection of gases such as hydrogen, the gateless GaN transistors are typically coated with a catalyst metal such as Pd or Pt to increase the detection sensitivity at room temperature. Functionalizing the surface with oxides, polymers and nitrides is also useful in enhancing the detection sensitivity for gases and ionic solutions.The use of enzymes or adsorbed antibody layers on the semiconductor surface leads to highly specific detection of a broad range of antigens of interest in the medical and security fields. We give examples of recent work showing sensitive detection of glucose, lactic acid, prostate cancer and breast cancer markers and the integration of the sensors with wireless data transmission systems to achieve robust, portable sensors. The amorphous transparent conducting oxide InZnGaO4 (IGZO) is attracting attention because of its high electron mobility (10-50 cm2.V-1.sec-1), high transparency in the visible region of the spectrum and its ability to be deposited with a wide range of conductivities.This raises the possibility of making low-cost electronics on a very wide range of arbitrary surfaces, including paper and plastics. N-type oxides such as zinc oxide, zinc tin oxide, indium gallium oxide, and indium gallium zinc tin oxide (IGZO) exhibit surprisingly high carrier mobilities even for amorphous films deposited at 300K. This has been explained by the fact that the conduction in these materials is predominantly through non-directional s orbitals which are less affected by disorder than the directional sp3 orbitals which control electron transport in Si. Examples of progress and discussion of remaining obstacles to use of IGZO TFTs will be presented Work performed in collaboration with Fan Ren.

  18. Glucose Sensing Using Functionalized Amorphous In-Ga-Zn-O Field-Effect Transistors.

    PubMed

    Du, Xiaosong; Li, Yajuan; Motley, Joshua R; Stickle, William F; Herman, Gregory S

    2016-03-01

    Recent advances in glucose sensing have focused on the integration of sensors into contact lenses to allow noninvasive continuous glucose monitoring. Current technologies focus primarily on enzyme-based electrochemical sensing which requires multiple nontransparent electrodes to be integrated. Herein, we leverage amorphous indium gallium zinc oxide (IGZO) field-effect transistors (FETs), which have found use in a wide range of display applications and can be made fully transparent. Bottom-gated IGZO-FETs can have significant changes in electrical characteristics when the back-channel is exposed to different environments. We have functionalized the back-channel of IGZO-FETs with aminosilane groups that are cross-linked to glucose oxidase and have demonstrated that these devices have high sensitivity to changes in glucose concentrations. Glucose sensing occurs through the decrease in pH during glucose oxidation, which modulates the positive charge of the aminosilane groups attached to the IGZO surface. The change in charge affects the number of acceptor-like surface states which can deplete electron density in the n-type IGZO semiconductor. Increasing glucose concentrations leads to an increase in acceptor states and a decrease in drain-source conductance due to a positive shift in the turn-on voltage. The functionalized IGZO-FET devices are effective in minimizing detection of interfering compounds including acetaminophen and ascorbic acid. These studies suggest that IGZO FETs can be effective for monitoring glucose concentrations in a variety of environments, including those where fully transparent sensing elements may be of interest.

  19. Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates

    NASA Astrophysics Data System (ADS)

    Dindar, A.; Kim, J. B.; Fuentes-Hernandez, C.; Kippelen, B.

    2011-10-01

    We report on the fabrication of p-channel thin film transistors (TFTs) and vertically stacked complementary inverters comprised of a p-channel copper oxide TFT on top of an n-channel indium gallium zinc oxide TFT fabricated on a flexible polyethersulfone substrate. The p- and n-channel TFTs showed saturation mobility values of 0.0022 and 1.58 cm2/Vs, respectively, yielding inverters with a gain of 120 V/V. This level of performance was achieved by reducing the copper oxide channel thickness, allowing oxygen diffusion into the copper oxide layer at medium processing temperature (150 °C).

  20. Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

    DTIC Science & Technology

    2011-04-30

    zinc oxide (a-IGZO) thin film transistors ( TFTs ) was...Amorphous indium-gallium- zinc oxide thin - film transistors (a-IGZO TFTs ) have been investigated for switching devices in the active matrix liquid crystal...depletion-mode ZnO -based thin - film transistors ( TFTs ) were studied using two approaches. The first approach used elevated substrate

  1. High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

    NASA Astrophysics Data System (ADS)

    Pyo, Ju-Young; Cho, Won-Ju

    2017-03-01

    In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (∼17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (∼87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH‑1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

  2. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  3. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  4. Amorphous titanium-oxide supercapacitors

    PubMed Central

    Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

    2016-01-01

    The electric capacitance of an amorphous TiO2-x surface increases proportionally to the negative sixth power of the convex diameter d. This occurs because of the van der Waals attraction on the amorphous surface of up to 7 mF/cm2, accompanied by extreme enhanced electron trapping resulting from both the quantum-size effect and an offset effect from positive charges at oxygen-vacancy sites. Here we show that a supercapacitor, constructed with a distributed constant-equipment circuit of large resistance and small capacitance on the amorphous TiO2-x surface, illuminated a red LED for 37 ms after it was charged with 1 mA at 10 V. The fabricated device showed no dielectric breakdown up to 1,100 V. Based on this approach, further advances in the development of amorphous titanium-dioxide supercapacitors might be attained by integrating oxide ribbons with a micro-electro mechanical system. PMID:27767103

  5. Amorphous titanium-oxide supercapacitors

    NASA Astrophysics Data System (ADS)

    Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

    2016-10-01

    The electric capacitance of an amorphous TiO2-x surface increases proportionally to the negative sixth power of the convex diameter d. This occurs because of the van der Waals attraction on the amorphous surface of up to 7 mF/cm2, accompanied by extreme enhanced electron trapping resulting from both the quantum-size effect and an offset effect from positive charges at oxygen-vacancy sites. Here we show that a supercapacitor, constructed with a distributed constant-equipment circuit of large resistance and small capacitance on the amorphous TiO2-x surface, illuminated a red LED for 37 ms after it was charged with 1 mA at 10 V. The fabricated device showed no dielectric breakdown up to 1,100 V. Based on this approach, further advances in the development of amorphous titanium-dioxide supercapacitors might be attained by integrating oxide ribbons with a micro-electro mechanical system.

  6. Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

    NASA Astrophysics Data System (ADS)

    Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

    2015-11-01

    By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

  7. Metal Oxide Thin Film Transistors on Paper Substrate: Fabrication, Characterization, and Printing Process

    NASA Astrophysics Data System (ADS)

    Choi, Nack-Bong

    Flexible electronics is an emerging next-generation technology that offers many advantages such as light weight, durability, comfort, and flexibility. These unique features enable many new applications such as flexible display, flexible sensors, conformable electronics, and so forth. For decades, a variety of flexible substrates have been demonstrated for the application of flexible electronics. Most of them are plastic films and metal foils so far. For the fundamental device of flexible circuits, thin film transistors (TFTs) using poly silicon, amorphous silicon, metal oxide and organic semiconductor have been successfully demonstrated. Depending on application, low-cost and disposable flexible electronics will be required for convenience. Therefore it is important to study inexpensive substrates and to explore simple processes such as printing technology. In this thesis, paper is introduced as a new possible substrate for flexible electronics due to its low-cost and renewable property, and amorphous indium gallium zinc oxide (a-IGZO) TFTs are realized as the promising device on the paper substrate. The fabrication process and characterization of a-IGZO TFT on the paper substrate are discussed. a-IGZO TFTs using a polymer gate dielectric on the paper substrate demonstrate excellent performances with field effect mobility of ˜20 cm2 V-1 s-1, on/off current ratio of ˜106, and low leakage current, which show the enormous potential for flexible electronics application. In order to complement the n-channel a-IGZO TFTs and then enable complementary metal-oxide semiconductor (CMOS) circuit architectures, cuprous oxide is studied as a candidate material of p-channel oxide TFTs. In this thesis, a printing process is investigated as an alternative method for the fabrication of low-cost and disposable electronics. Among several printing methods, a modified offset roll printing that prints high resolution patterns is presented. A new method to fabricate a high resolution

  8. A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

    NASA Astrophysics Data System (ADS)

    Hsu, Chih-Chieh; Sun, Jhen-Kai; Wu, Chien-Hsun

    2014-11-01

    This study investigated electrical characteristics and stability variations of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with plasma damage on their source/drain (S/D) regions. The influence of the plasma damage on the TFT performance is absent as the channel length is 36-100 μm. When the channel length is decreased to 3-5 μm, the mobility (μ ) of the bottom gate TFT (BG TFT) with plasma damage is significantly degraded to 0.6 cm2 (V s)-1, which is much lower than 4.3 cm2 (V s)-1 of a damage-free BG TFT. We utilized the TFT passivation layer and the indium tin oxide (ITO), which was used as the pixel electrode material in the TFT backplane, to be the top gate insulator and top gate electrode of the defective BG TFT to obtain the defective dual-gate TFT. The mobility can be restored to 5.1 cm2 (V s)-1. Additional process steps are not required. Besides, this method is easily implemented and is fully compatible with TFT backplane fabrication process. The transfer curves, hysteresis characteristics, stabilities under constant voltage stress and constant current stress tests were measured to give evidences that the traps created by the plasma damage on the S/D regions indeed can affect electron transport. This trap-limited conduction can be improved by using the top gate. It was proven that the top gate was not for contributing an observably additional current. It was for inducing electrons to electrically passivate the plasma-induced defects near the back channel. Thus, the trapping/detrapping of the electrons transporting in the front channel can be reduced. The trap density near the Fermi level, hopping distance and hopping energy are 1.1  ×  1018 cm-3 eV-1, 162 Å, and 52 meV for the BG TFT with plasma damage on the S/D regions.

  9. A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

    NASA Astrophysics Data System (ADS)

    Hsu, Chih-Chieh; Sun, Jhen-Kai; Wu, Chien-Hsun

    2015-11-01

    This study investigated electrical characteristics and stability variations of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with plasma damage on their source/drain (S/D) regions. The influence of the plasma damage on the TFT performance is absent as the channel length is 36-100 μm. When the channel length is decreased to 3-5 μm, the mobility (μ ) of the bottom gate TFT (BG TFT) with plasma damage is significantly degraded to 0.6 cm2 (V s)-1, which is much lower than 4.3 cm2 (V s)-1 of a damage-free BG TFT. We utilized the TFT passivation layer and the indium tin oxide (ITO), which was used as the pixel electrode material in the TFT backplane, to be the top gate insulator and top gate electrode of the defective BG TFT to obtain the defective dual-gate TFT. The mobility can be restored to 5.1 cm2 (V s)-1. Additional process steps are not required. Besides, this method is easily implemented and is fully compatible with TFT backplane fabrication process. The transfer curves, hysteresis characteristics, stabilities under constant voltage stress and constant current stress tests were measured to give evidences that the traps created by the plasma damage on the S/D regions indeed can affect electron transport. This trap-limited conduction can be improved by using the top gate. It was proven that the top gate was not for contributing an observably additional current. It was for inducing electrons to electrically passivate the plasma-induced defects near the back channel. Thus, the trapping/detrapping of the electrons transporting in the front channel can be reduced. The trap density near the Fermi level, hopping distance and hopping energy are 1.1  ×  1018 cm-3 eV-1, 162 Å, and 52 meV for the BG TFT with plasma damage on the S/D regions.

  10. Full-Swing InGaZnO Thin Film Transistor Inverter with Depletion Load

    NASA Astrophysics Data System (ADS)

    Lee, Jeong-Min; Cho, In-Tak; Lee, Jong-Ho; Kwon, Hyuck-In

    2009-10-01

    A high performance amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) inverter is implemented using the enhancement mode driver and the depletion mode load. The threshold voltage of the TFT is easily controlled by adjusting the active layer thickness in a-IGZO TFTs. The proposed inverter shows much improved switching characteristics including higher voltage gain, wider swing range, and higher noise margins compared to the conventional inverter with an enhancement load.

  11. Trap States of the Oxide Thin Film Transistor

    NASA Astrophysics Data System (ADS)

    Yu, Kyeong Min; Yuh, Jin Tae; Park, Sang Hee Ko; Ryu, Min Ki; Yun, Eui Jung; Bae, Byung Seong

    2013-10-01

    We investigated the temperature dependent recovery of the threshold voltage shift observed in both ZnO and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) after application of gate bias and light illumination. Two types of recovery were observed for both the ZnO and IGZO TFTs; low temperature recovery (below 110 °C) which is attributed to the trapped charge and high temperature recovery (over 110 °C) which is related to the annihilation of trap states generated during stresses. From a comparison study of the recovery rate with the analysis of hydrogen diffusion isochronal annealing, a similar behavior was observed for both TFT recovery and hydrogen diffusion. This result suggests that hydrogen plays an important role in the generation and annihilation of trap states in oxide TFTs under gate bias or light illumination stresses.

  12. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

    NASA Astrophysics Data System (ADS)

    Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-01

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  13. Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

    SciTech Connect

    Jo, Jeong-Wan; Park, Sung Kyu E-mail: skpark@cau.ac.kr; Kim, Yong-Hoon E-mail: skpark@cau.ac.kr

    2014-07-28

    In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

  14. Interactions of hydrogen with amorphous hafnium oxide

    NASA Astrophysics Data System (ADS)

    Kaviani, Moloud; Afanas'ev, Valeri V.; Shluger, Alexander L.

    2017-02-01

    We used density functional theory (DFT) calculations to study the interaction of hydrogen with amorphous hafnia (a -HfO2 ) using a hybrid exchange-correlation functional. Injection of atomic hydrogen, its diffusion towards electrodes, and ionization can be seen as key processes underlying charge instability of high-permittivity amorphous hafnia layers in many applications. Hydrogen in many wide band gap crystalline oxides exhibits negative-U behavior (+1 and -1 charged states are thermodynamically more stable than the neutral state) . Our results show that in a -HfO2 hydrogen is also negative-U, with charged states being the most thermodynamically stable at all Fermi level positions. However, metastable atomic hydrogen can share an electron with intrinsic electron trapping precursor sites [Phys. Rev. B 94, 020103 (2016)., 10.1103/PhysRevB.94.020103] forming a [etr -+O -H ] center, which is lower in energy on average by about 0.2 eV. These electron trapping sites can affect both the dynamics and thermodynamics of the interaction of hydrogen with a -HfO2 and the electrical behavior of amorphous hafnia films in CMOS devices.

  15. Negative Magnetoresistance in Amorphous Indium Oxide Wires

    NASA Astrophysics Data System (ADS)

    Mitra, Sreemanta; Tewari, Girish C.; Mahalu, Diana; Shahar, Dan

    2016-11-01

    We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions.

  16. Negative Magnetoresistance in Amorphous Indium Oxide Wires

    PubMed Central

    Mitra, Sreemanta; Tewari, Girish C; Mahalu, Diana; Shahar, Dan

    2016-01-01

    We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions. PMID:27876859

  17. Structure and Properties of Amorphous Transparent Conducting Oxides

    NASA Astrophysics Data System (ADS)

    Medvedeva, Julia

    Driven by technological appeal, the research area of amorphous oxide semiconductors has grown tremendously since the first demonstration of the unique properties of amorphous indium oxide more than a decade ago. Today, amorphous oxides, such as a-ITO, a-IZO, a-IGZO, or a-ZITO, exhibit the optical, electrical, thermal, and mechanical properties that are comparable or even superior to those possessed by their crystalline counterparts, pushing the latter out of the market. Large-area uniformity, low-cost low-temperature deposition, high carrier mobility, optical transparency, and mechanical flexibility make these materials appealing for next-generation thin-film electronics. Yet, the structural variations associated with crystalline-to-amorphous transition as well as their role in carrier generation and transport properties of these oxides are far from being understood. Although amorphous oxides lack grain boundaries, factors like (i) size and distribution of nanocrystalline inclusions; (ii) spatial distribution and clustering of incorporated cations in multicomponent oxides; (iii) formation of trap defects; and (iv) piezoelectric effects associated with internal strains, will contribute to electron scattering. In this work, ab-initio molecular dynamics (MD) and accurate density-functional approaches are employed to understand how the properties of amorphous ternary and quaternary oxides depend on quench rates, cation compositions, and oxygen stoichiometries. The MD results, combined with thorough experimental characterization, reveal that interplay between the local and long-range structural preferences of the constituent oxides gives rise to a complex composition-dependent structural behavior in the amorphous oxides. The proposed network models of metal-oxygen polyhedra help explain the observed intriguing electrical and optical properties in In-based oxides and suggest ways to broaden the phase space of amorphous oxide semiconductors with tunable properties. The

  18. Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Lim, Wantae

    2009-12-01

    This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance

  19. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tsao, S. W.; Chang, T. C.; Huang, S. Y.; Chen, M. C.; Chen, S. C.; Tsai, C. T.; Kuo, Y. J.; Chen, Y. C.; Wu, W. C.

    2010-12-01

    This study investigates the effect of hydrogen incorporation on amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs). The threshold voltage ( Vth) and subthreshold swing ( SS) of hydrogen-incorporated a-IGZO TFTs were improved, and the threshold voltage shift (Δ Vth) in hysteresis loop was also suppressed from 4 V to 2 V. The physical property and chemical composition of a-IGZO films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. Experimental results show that the hydrogen-induced passivation of the interface trap states between active layer and dielectric is responsible for the improvement of SS and Vth.

  20. The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure

    NASA Astrophysics Data System (ADS)

    Chen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Hsieh, Tien-Yu; Chen, Te-Chih; Wu, Chang-Pei; Chou, Cheng-Hsu; Chung, Wang-Cheng; Chang, Jung-Fang; Tai, Ya-Hsiang

    2012-11-01

    This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative threshold voltage shifts of devices after NBIS are showed when device has larger FF structures. This finding is attributed to more dispersive distribution of photo-generated holes in the width direction of a-IGZO during NBIS, which reduce the hole trapping phenomenon in the front channel interface. The a-IGZO TFT with FF structure is expected to be an effective method to increase the electrical reliability of devices after NBIS.

  1. Unveiling the complex electronic structure of amorphous metal oxides

    PubMed Central

    Århammar, C.; Pietzsch, Annette; Bock, Nicolas; Holmström, Erik; Araujo, C. Moyses; Gråsjö, Johan; Zhao, Shuxi; Green, Sara; Peery, T.; Hennies, Franz; Amerioun, Shahrad; Föhlisch, Alexander; Schlappa, Justine; Schmitt, Thorsten; Strocov, Vladimir N.; Niklasson, Gunnar A.; Wallace, Duane C.; Rubensson, Jan-Erik; Johansson, Börje; Ahuja, Rajeev

    2011-01-01

    Amorphous materials represent a large and important emerging area of material’s science. Amorphous oxides are key technological oxides in applications such as a gate dielectric in Complementary metal-oxide semiconductor devices and in Silicon-Oxide-Nitride-Oxide-Silicon and TANOS (TaN-Al2O3-Si3N4-SiO2-Silicon) flash memories. These technologies are required for the high packing density of today’s integrated circuits. Therefore the investigation of defect states in these structures is crucial. In this work we present X-ray synchrotron measurements, with an energy resolution which is about 5–10 times higher than is attainable with standard spectrometers, of amorphous alumina. We demonstrate that our experimental results are in agreement with calculated spectra of amorphous alumina which we have generated by stochastic quenching. This first principles method, which we have recently developed, is found to be superior to molecular dynamics in simulating the rapid gas to solid transition that takes place as this material is deposited for thin film applications. We detect and analyze in detail states in the band gap that originate from oxygen pairs. Similar states were previously found in amorphous alumina by other spectroscopic methods and were assigned to oxygen vacancies claimed to act mutually as electron and hole traps. The oxygen pairs which we probe in this work act as hole traps only and will influence the information retention in electronic devices. In amorphous silica oxygen pairs have already been found, thus they may be a feature which is characteristic also of other amorphous metal oxides.

  2. Amorphous tin-cadmium oxide films and the production thereof

    SciTech Connect

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  3. Modular time division multiplexer: Efficient simultaneous characterization of fast and slow transients in multiple samples

    NASA Astrophysics Data System (ADS)

    Kim, Stephan D.; Luo, Jiajun; Buchholz, D. Bruce; Chang, R. P. H.; Grayson, M.

    2016-09-01

    A modular time division multiplexer (MTDM) device is introduced to enable parallel measurement of multiple samples with both fast and slow decay transients spanning from millisecond to month-long time scales. This is achieved by dedicating a single high-speed measurement instrument for rapid data collection at the start of a transient, and by multiplexing a second low-speed measurement instrument for slow data collection of several samples in parallel for the later transients. The MTDM is a high-level design concept that can in principle measure an arbitrary number of samples, and the low cost implementation here allows up to 16 samples to be measured in parallel over several months, reducing the total ensemble measurement duration and equipment usage by as much as an order of magnitude without sacrificing fidelity. The MTDM was successfully demonstrated by simultaneously measuring the photoconductivity of three amorphous indium-gallium-zinc-oxide thin films with 20 ms data resolution for fast transients and an uninterrupted parallel run time of over 20 days. The MTDM has potential applications in many areas of research that manifest response times spanning many orders of magnitude, such as photovoltaics, rechargeable batteries, amorphous semiconductors such as silicon and amorphous indium-gallium-zinc-oxide.

  4. Atomistic Modeling of Mechanical Loss in Amorphous Oxides

    NASA Astrophysics Data System (ADS)

    Hamdan, Rashid; Trinastic, Jonathan; Cheng, Hai-Ping

    2013-03-01

    The mechanical and optical loss in amorphous solids, described by the internal friction and light scattering susceptibility are investigated using classical, atomistic molecular dynamics simulation. We implemented the trajectory bisection method and the non-local ridge method in DL-POLY molecular dynamics simulation software. These methods were used to locate the different local potential energy minima that a system visits through an MD trajectory and the transition state between any two consecutive minima. From the distributions of the barrier height and asymmetry, and the relaxation time of the different transition states we calculated the internal friction of pure amorphous silica and mixed oxides. Acknowledgment: NSF/PHYS

  5. Photochemical route for accessing amorphous metal oxide materials for water oxidation catalysis.

    PubMed

    Smith, Rodney D L; Prévot, Mathieu S; Fagan, Randal D; Zhang, Zhipan; Sedach, Pavel A; Siu, Man Kit Jack; Trudel, Simon; Berlinguette, Curtis P

    2013-04-05

    Large-scale electrolysis of water for hydrogen generation requires better catalysts to lower the kinetic barriers associated with the oxygen evolution reaction (OER). Although most OER catalysts are based on crystalline mixed-metal oxides, high activities can also be achieved with amorphous phases. Methods for producing amorphous materials, however, are not typically amenable to mixed-metal compositions. We demonstrate that a low-temperature process, photochemical metal-organic deposition, can produce amorphous (mixed) metal oxide films for OER catalysis. The films contain a homogeneous distribution of metals with compositions that can be accurately controlled. The catalytic properties of amorphous iron oxide prepared with this technique are superior to those of hematite, whereas the catalytic properties of a-Fe(100-y-z)Co(y)Ni(z)O(x) are comparable to those of noble metal oxide catalysts currently used in commercial electrolyzers.

  6. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chang-Jung; Kim, Sangwook; Lee, Je-Hun; Park, Jin-Seong; Kim, Sunil; Park, Jaechul; Lee, Eunha; Lee, Jaechul; Park, Youngsoo; Kim, Joo Han; Shin, Sung Tae; Chung, U.-In

    2009-12-01

    We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structure and drastically decrease the carrier concentration and hall mobility in HIZO films. The thin film transistors (TFTs) with amorphous HIZO active channel exhibit good electrical properties with field effect mobility of around 10 cm2/Vs, S of 0.23 V/decade, and high Ion/off ratio of over 108, enough to operate the next electronic devices. In particular, under bias-temperature stress test, the HIZO TFTs with 0.3 mol % (Hf content) showed only 0.46 V shift in threshold voltage, compared with 3.25 V shift in HIZO TFT (0.1 mol %). The Hf ions may play a key role to improve the instability of TFTs due to high oxygen bonding ability. Therefore, the amorphous HIZO semiconductor will be a prominent candidate as an operation device for large area electronic applications.

  7. Absorption of ac fields in amorphous indium-oxide films

    SciTech Connect

    Ovadyahu, Z.

    2014-08-20

    Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (In{sub x}O) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In{sub 2}O{sub 3−x}) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

  8. Bacterial adhesion on amorphous and crystalline metal oxide coatings.

    PubMed

    Almaguer-Flores, Argelia; Silva-Bermudez, Phaedra; Galicia, Rey; Rodil, Sandra E

    2015-12-01

    Several studies have demonstrated the influence of surface properties (surface energy, composition and topography) of biocompatible materials on the adhesion of cells/bacteria on solid substrates; however, few have provided information about the effect of the atomic arrangement or crystallinity. Using magnetron sputtering deposition, we produced amorphous and crystalline TiO2 and ZrO2 coatings with controlled micro and nanoscale morphology. The effect of the structure on the physical-chemical surface properties was carefully analyzed. Then, we studied how these parameters affect the adhesion of Escherichia coli and Staphylococcus aureus. Our findings demonstrated that the nano-topography and the surface energy were significantly influenced by the coating structure. Bacterial adhesion at micro-rough (2.6 μm) surfaces was independent of the surface composition and structure, contrary to the observation in sub-micron (0.5 μm) rough surfaces, where the crystalline oxides (TiO2>ZrO2) surfaces exhibited higher numbers of attached bacteria. Particularly, crystalline TiO2, which presented a predominant acidic nature, was more attractive for the adhesion of the negatively charged bacteria. The information provided by this study, where surface modifications are introduced by means of the deposition of amorphous or crystalline oxide coatings, offers a route for the rational design of implant surfaces to control or inhibit bacterial adhesion.

  9. Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

    PubMed Central

    Yun, Myeong Gu; Kim, Ye Kyun; Ahn, Cheol Hyoun; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun; Kim, Yong-Hoon

    2016-01-01

    We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al2O3 gate insulators are damaged by ion bombardment during the deposition of the IGZO channel layers by sputtering and the damage results in the hysteresis behavior of the photo-TFTs. The hysteresis loops broaden as the deposition power density increases. This implies that we can easily control the amount of the interface trap sites and/or trap sites in the gate insulator near the interface. The photo-TFTs with large hysteresis-related defects have high S/N ratio and fast recovery in spite of the low operation voltages including a drain voltage of 1 V, positive gate bias pulse voltage of 3 V, and gate voltage pulse width of 3 V (0 to 3 V). In addition, through the hysteresis-related defect-generating process, we have achieved a high responsivity since the bulk defects that can be photo-excited and eject electrons also increase with increasing deposition power density. PMID:27553518

  10. Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

    NASA Astrophysics Data System (ADS)

    Yun, Myeong Gu; Kim, Ye Kyun; Ahn, Cheol Hyoun; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun; Kim, Yong-Hoon

    2016-08-01

    We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al2O3 gate insulators are damaged by ion bombardment during the deposition of the IGZO channel layers by sputtering and the damage results in the hysteresis behavior of the photo-TFTs. The hysteresis loops broaden as the deposition power density increases. This implies that we can easily control the amount of the interface trap sites and/or trap sites in the gate insulator near the interface. The photo-TFTs with large hysteresis-related defects have high S/N ratio and fast recovery in spite of the low operation voltages including a drain voltage of 1 V, positive gate bias pulse voltage of 3 V, and gate voltage pulse width of 3 V (0 to 3 V). In addition, through the hysteresis-related defect-generating process, we have achieved a high responsivity since the bulk defects that can be photo-excited and eject electrons also increase with increasing deposition power density.

  11. Oxidation of fluorinated amorphous carbon (a-CF(x)) films.

    PubMed

    Yun, Yang; Broitman, Esteban; Gellman, Andrew J

    2010-01-19

    Amorphous fluorinated carbon (a-CF(x)) films have a variety of potential technological applications. In most such applications these films are exposed to air and undergo partial surface oxidation. X-ray photoemission spectroscopy has been used to study the oxidation of fresh a-CF(x) films deposited by magnetron sputtering. The oxygen sticking coefficient measured by exposure to low pressures (<10(-3) Torr) of oxygen at room temperature is on the order of S approximately 10(-6), indicating that the surfaces of these films are relatively inert to oxidation when compared with most metals. The X-ray photoemission spectra indicate that the initial stages of oxygen exposure (<10(7) langmuirs) result in the preferential oxidation of the carbon atoms with zero or one fluorine atom, perhaps because these carbon atoms are more likely to be found in configurations with unsaturated double bonds and radicals than carbon atoms with two or three fluorine atoms. Exposure of the a-CF(x) film to atmospheric pressures of air (effective exposure of 10(12) langmuirs to O(2)) results in lower levels of oxygen uptake than the low pressure exposures (<10(7) langmuirs). It is suggested that this is the result of oxidative etching of the most reactive carbon atoms, leaving a relatively inert surface. Finally, low pressure exposures to air result in the adsorption of both nitrogen and oxygen onto the surface. Some of the nitrogen adsorbed on the surface at low pressures is in a reversibly adsorbed state in the sense that subsequent exposure to low pressures of O(2) results in the displacement of nitrogen by oxygen. Similarly, when an a-CF(x) film oxidized in pure O(2) is exposed to low pressures of air, some of the adsorbed oxygen is displaced by nitrogen. It is suggested that these forms of nitrogen and oxygen are bound to free radical sites in the film.

  12. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    NASA Astrophysics Data System (ADS)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  13. Ceramic oxides: Surfaces and amorphous/crystalline interfaces

    NASA Astrophysics Data System (ADS)

    Gilliss, Shelley Rae

    Model studies have been carried out to further the basic understanding of ceramic oxide surfaces and the interface between ceramic oxides and amorphous films. Boundary-migration studies using model geometries of alumina and rutile bicrystals have been carried out. In the case of the rutile boundary, migration proceeds faster near the surface, while in the alumina bicrystal migration proceeds faster away from the boundary. A solution/reprecipitation mechanism is proposed for the alumina case, while a mechanism similar to diffusion-induced grain boundary migration (DIGM) is proposed for the rutile case. Three distinct faceting behaviors for the m-plane of alumina have been identified. The low-energy configuration was observed within a glass droplet whereas higher-energy configurations were observed outside dewet droplets and within a migrating grain boundary. These high-energy configurations are due to kinetic limitations. A method for monitoring the evolution of faceting over the course of several heat treatments has been developed which uses a combination of visible-light microscopy (VLM) and atomic-force microscopy (AFM) with the aid of fiducial marks (indentations) as reference markers. Grooves at migrating grain boundaries in high-purity alumina have been studied using a combination of VLM, AFM, and transmission electron microscopy (TEM) through a progression of heat treatments at 1650°C. The partial angles of grooves that developed at migrating grain boundaries were found to be asymmetric compared with those that developed at stationary boundaries. The wetting behavior of an amorphous SiO2 film on single-crystal substrates of TiO2 has been extensively studied. A model involving the initiation of an instability due to surface-tension gradients is proposed as the mechanism for the complex patterns observed. It is proposed that the surface-tension gradients are caused by the changing composition of the SiO 2 thin film due to dissolution of the TiO2 substrate into

  14. Finite-size effects in amorphous indium oxide

    NASA Astrophysics Data System (ADS)

    Mitra, Sreemanta; Tewari, Girish C.; Mahalu, Diana; Shahar, Dan

    2016-04-01

    We study the low-temperature magnetotransport properties of several highly disordered amorphous indium oxide (a:InO) samples. Simultaneously fabricated devices comprising a two-dimensional (2D) film and 10 -μ m -long wires of different widths were measured to investigate the effect of size as we approach the 1D limit, which is around 4 times the correlation length, and happens to be around 100 nm for a:InO. The film and the wires showed magnetic field (B )-induced superconductor to insulator transition (SIT). In the superconducting side, the resistance increased with decrease in wire width, whereas an opposite trend is observed in the insulating side. We find that this effect can be explained in light of charge-vortex duality picture of the SIT. Resistance of the 2D film follows an activated behavior over the temperature (T ), whereas, the wires show a crossover from the high-T -activated to a T -independent behavior. At high-temperature regime the wires' resistance follow the film's until they deviate and became independent of T . We find that the temperature at which this deviation occurs evolves with the magnetic field and the width of the wire, which show the effect of finite size on the transport.

  15. Electrically conducting ternary amorphous fully oxidized materials and their application

    NASA Technical Reports Server (NTRS)

    Giauque, Pierre (Inventor); Nicolet, Marc (Inventor); Gasser, Stefan M. (Inventor); Kolawa, Elzbieta A. (Inventor); Cherry, Hillary (Inventor)

    2004-01-01

    Electrically active devices are formed using a special conducting material of the form Tm--Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.

  16. Ultraflexible polymer solar cells using amorphous zinc-indium-tin oxide transparent electrodes.

    PubMed

    Zhou, Nanjia; Buchholz, Donald B; Zhu, Guang; Yu, Xinge; Lin, Hui; Facchetti, Antonio; Marks, Tobin J; Chang, Robert P H

    2014-02-01

    Polymer solar cells are fabricated on highly conductive, transparent amorphous zinc indium tin oxide (a-ZITO) electrodes. For two representative active layer donor polymers, P3HT and PTB7, the power conversion efficiencies (PCEs) are comparable to reference devices using polycrystalline indium tin oxide (ITO) electrodes. Benefitting from the amorphous character of a-ZITO, the new devices are highly flexible and can be repeatedly bent to a radius of 5 mm without significant PCE reduction.

  17. Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Peter Seif, Johannes; Descoeudres, Antoine; Filipič, Miha; Smole, Franc; Topič, Marko; Charles Holman, Zachary; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm2 due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit voltages can be maintained, thanks to good interface passivation. However, we find that the gain in current is more than offset by losses in fill factor. Aided by device simulations, we link these losses to impeded carrier collection fundamentally caused by the increased valence band offset at the amorphous/crystalline interface. Despite this, carrier extraction can be improved by raising the temperature; we find that cells with amorphous silicon oxide window layers show an even lower temperature coefficient than reference heterojunction solar cells (-0.1%/°C relative drop in efficiency, compared to -0.3%/°C). Hence, even though cells with oxide layers do not outperform cells with the standard design at room temperature, at higher temperatures—which are closer to the real working conditions encountered in the field—they show superior performance in both experiment and simulation.

  18. Thermochemical, structural and electronic properties of amorphous oxides, nitrides and sulfides

    NASA Astrophysics Data System (ADS)

    Zawadzki, Pawel; Lany, Stephan

    2015-03-01

    Amorphous thin films materials become increasingly important components of many functional devices such as thin film displays, photovoltaic cells or thin film transistors. Due to lack of grain boundaries, they have superior uniformity and smoothest, flexibility and corrosion resistance. Amorphous thin films are typically prepared using physical vapor deposition (PVD) techniques at temperatures well below the melting point of deposited material (<0.2Tm). Computational models of amorphous structures, however, are almost elusively constructed from a high temperature equilibrated crystal melt using simulated annealing (SA) protocol. To account for low temperature growth conditions of amorphous thin films we recently developed a new simulation technique. The method, kinetically limited minimization (KLM), starts from a randomly initialized structure and minimizes the total energy in a number of local structural perturbation-relaxation events. We apply KLM to model amorphous structures of 20 binary oxides, nitrides and sulfides and compare their thermochemical, structural and electronic properties.

  19. Remarkably stable amorphous metal oxide grown on Zr-Cu-Be metallic glass

    PubMed Central

    Lim, Ka Ram; Kim, Chang Eun; Yun, Young Su; Kim, Won Tae; Soon, Aloysius; Kim, Do Hyang

    2015-01-01

    In the present study, we investigated the role of an aliovalent dopant upon stabilizing the amorphous oxide film. We added beryllium into the Zr50Cu50 metallic glass system, and found that the amorphous oxide layer of Be-rich phase can be stabilized even at elevated temperature above Tg of the glass matrix. The thermal stability of the amorphous oxide layer is substantially enhanced due to Be addition. As confirmed by high-temperature cross-section HR-TEM, fully disordered Be-added amorphous layer is observed, while the rapid crystallization is observed without Be. To understand the role of Be, we employed ab-initio molecular dynamics to compare the mobility of ions with/without Be dopant, and propose a disordered model where Be dopant occupies Zr vacancy and induces structural disorder to the amorphous phase. We find that the oxygen mobility is slightly suppressed due to Be dopant, and Be mobility is unexpectedly lower than that of oxygen, which we attribute to the aliovalent nature of Be dopant whose diffusion always accompany multiple counter-diffusion of other ions. Here, we explain the origin of superior thermal stability of amorphous oxide film in terms of enhanced structural disorder and suppressed ionic mobility due to the aliovalent dopant. PMID:26658671

  20. Amorphous mixed-metal hydroxide nanostructures for advanced water oxidation catalysts

    NASA Astrophysics Data System (ADS)

    Gao, Y. Q.; Liu, X. Y.; Yang, G. W.

    2016-02-01

    The design of highly efficient, durable, and earth-abundant catalysts for the oxygen evolution reaction (OER) is crucial in order to promote energy conversion and storage processes. Here, we synthesize amorphous mixed-metal (Ni-Fe) hydroxide nanostructures with a homogeneous distribution of Ni/Fe as well as a tunable Ni/Fe ratio by a simple, facile, green and low-cost electrochemical technique, and we demonstrate that the synthesized amorphous nanomaterials possess ultrahigh activity and super long-term cycle stability in the OER process. The amorphous Ni0.71Fe0.29(OH)x nanostructure affords a current density of 10 mA cm-2 at an overpotential of a mere 0.296 V and a small Tafel slope of 58 mV dec-1, while no deactivation is detected in the CV testing even up to 30 000 cycles, which suggests the promising application of these amorphous nanomaterials in electrochemical oxidation. Meanwhile, the distinct catalytic activities among these amorphous Ni-Fe hydroxide nanostructures prompts us to take notice of the composition of the alloy hydroxides/oxides when studying their catalytic properties, which opens an avenue for the rational design and controllable preparation of such amorphous nanomaterials as advanced OER electrocatalysts.The design of highly efficient, durable, and earth-abundant catalysts for the oxygen evolution reaction (OER) is crucial in order to promote energy conversion and storage processes. Here, we synthesize amorphous mixed-metal (Ni-Fe) hydroxide nanostructures with a homogeneous distribution of Ni/Fe as well as a tunable Ni/Fe ratio by a simple, facile, green and low-cost electrochemical technique, and we demonstrate that the synthesized amorphous nanomaterials possess ultrahigh activity and super long-term cycle stability in the OER process. The amorphous Ni0.71Fe0.29(OH)x nanostructure affords a current density of 10 mA cm-2 at an overpotential of a mere 0.296 V and a small Tafel slope of 58 mV dec-1, while no deactivation is detected in the CV

  1. Carrier trapping anisotropy in ambipolar SnO thin-film transistors

    NASA Astrophysics Data System (ADS)

    Luo, Hao; Liang, Lingyan; Cao, Hongtao

    2017-03-01

    The anisotropic carrier trapping behaviors was demonstrated for ambipolar tin monoxide (SnO) thin-film transistors (TFTs). On one hand, the TFTs exhibited good stability with almost no changes in transfer characteristics under negative gate-bias stress (NGBS). On the other, under positive gate-bias stress (PGBS), the transfer curves presented parallel and positive shift with no degradation in field-effect mobility and subthreshold voltage swing. The stress-time evolution of the turn-on voltage shift, induced by different positive stress voltages and temperatures, could be described by the stretched exponential model. The relaxation time was extracted to be 1.6 × 104 s at room temperature with activation energy of 0.43 eV, indicating that the ambipolar SnO TFTs under PGBS approach the stability of amorphous indium-gallium-zinc oxide based TFTs.

  2. Performance regeneration of InGaZnO transistors with ultra-thin channels

    SciTech Connect

    Zhang, Binglei; Li, He; Zhang, Xijian E-mail: songam@sdu.edu.cn; Luo, Yi; Wang, Qingpu; Song, Aimin E-mail: songam@sdu.edu.cn

    2015-03-02

    Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period.

  3. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

    NASA Astrophysics Data System (ADS)

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-05-01

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W /L=10μm/50μm) fabricated on glass exhibited a high field-effect mobility of 35.8cm2/Vs, a subthreshold gate swing value of 0.59V/decade, a thrseshold voltage of 5.9V, and an Ion/off ratio of 4.9×106, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

  4. The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

    SciTech Connect

    Ok, Kyung-Chul; Park, Jin-Seong E-mail: jsparklime@hanyang.ac.kr; Ko Park, Sang-Hee; Kim, H. E-mail: jsparklime@hanyang.ac.kr; Hwang, Chi-Sun; Soo Shin, Hyun; Bae, Jonguk

    2014-02-10

    We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.

  5. Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics

    NASA Astrophysics Data System (ADS)

    Jeong, Chan-Yong; Lee, Daeun; Han, Young-Joon; Choi, Yong-Jin; Kwon, Hyuck-In

    2015-08-01

    This paper experimentally investigates the subgap density of states (DOS) in p-type tin monoxide (SnO) thin-film transistors (TFTs) for the first time by using temperature-dependent field-effect measurements. As the temperature increases, the turn-on voltage moves in the positive direction, and the off-current and subthreshold slope continuously increase. We found that the conductivity of the SnO TFT obeys the Meyer-Neldel (MN) rule with a characteristic MN parameter of 28.6 eV-1 in the subthreshold region, from which we successfully extracted the subgap DOS by combing the field-effect method and the MN relation. The extracted subgap DOS from fabricated p-type SnO TFTs are exponentially distributed in energy, and exhibit around two orders of magnitude higher values compared to those of the n-type amorphous indium-gallium-zinc oxide TFTs.

  6. Influence of External Forces on the Mechanical Characteristics of the a-IGZO and Graphene Based Flexible Display

    NASA Astrophysics Data System (ADS)

    Kim, H.-J.; Kim, Youn-Jea

    2014-08-01

    Thin film transistors (TFTs) based flexible displays have optically transparent and m echanically flexible properties that are attractive for next-generation display technologies. In particular, "amorphous indium-gallium-zinc-oxide" (a- IGZO) and graphene have attracted much attention due to the advantages of their excellent unif ormity and compatibility with transparent and flexible substrates. To maintain these characteristics, it is important to confirm the deformation characteristics of TFTs with applied external for ces, such as compressive or tensile stress, distortion effects, and temperature. The mechanical c haracteristics of modeled devices applied to different active layers on TFTs, such as a- IGZO and graphene, were investigated under various external conditions. The distributions of t he stress-strain curve on each active layer and the deformed shapes were assessed graphically.

  7. Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

    SciTech Connect

    Kim, Jae-Sung; Xing Piao, Ming; Jang, Ho-Kyun; Kim, Gyu-Tae; Joo, Min-Kyu; Ahn, Seung-Eon; Choi, Yong-Hee

    2014-03-21

    Various plasma treatment effects such as oxygen (O{sub 2}), nitrogen (N{sub 2}), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O{sub 2} and N{sub 2} plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

  8. Amorphous vanadium oxide films synthesised by ALCVD for lithium rechargeable batteries

    NASA Astrophysics Data System (ADS)

    Le Van, K.; Groult, H.; Mantoux, A.; Perrigaud, L.; Lantelme, F.; Lindström, R.; Badour-Hadjean, R.; Zanna, S.; Lincot, D.

    This study addresses the lithium insertion performances of amorphous vanadium oxide films, synthesized by atomic layer chemical vapour deposition (ALCVD). AFM and SEM investigations showed that the as-deposited films are amorphous, compact and homogeneous. As revealed by XPS and Raman spectroscopy, the ALCVD oxide films after deposition are mainly composed of V 2O 5, with V 4+ surface content (about 10%). The insertion of Li + into the lattice was investigated in 1 M LiClO 4-PC. The results show that the electrochemical performances obtained with amorphous vanadium oxide films, with an optimal thickness of 200 nm (455 mAh g -1, i.e. composition of Li 2.9V 2O 5), were superior to crystalline V 2O 5 films. The amorphous films exhibit higher capacity and better cycle ability even for deep lithium insertion ratio compared to crystalline V 2O 5 films. The chemical diffusion coefficients, deduced from numerical simulation of chronopotentiograms, were comprised between 3 × 10 -12 and 10 -13 cm 2 s -1 for a lithium insertion ratio comprised between 0 and 2.9. AFM and Raman spectroscopy performed before and after lithiation showed that neither the morphology nor the local order of the amorphous films were significantly affected by the insertion/extraction of lithium. Raman measurements also revealed that a very small amount of lithium are locally trapped in the oxide lattice.

  9. Amorphous mixed-metal hydroxide nanostructures for advanced water oxidation catalysts.

    PubMed

    Gao, Y Q; Liu, X Y; Yang, G W

    2016-03-07

    The design of highly efficient, durable, and earth-abundant catalysts for the oxygen evolution reaction (OER) is crucial in order to promote energy conversion and storage processes. Here, we synthesize amorphous mixed-metal (Ni-Fe) hydroxide nanostructures with a homogeneous distribution of Ni/Fe as well as a tunable Ni/Fe ratio by a simple, facile, green and low-cost electrochemical technique, and we demonstrate that the synthesized amorphous nanomaterials possess ultrahigh activity and super long-term cycle stability in the OER process. The amorphous Ni0.71Fe0.29(OH)x nanostructure affords a current density of 10 mA cm(-2) at an overpotential of a mere 0.296 V and a small Tafel slope of 58 mV dec(-1), while no deactivation is detected in the CV testing even up to 30 000 cycles, which suggests the promising application of these amorphous nanomaterials in electrochemical oxidation. Meanwhile, the distinct catalytic activities among these amorphous Ni-Fe hydroxide nanostructures prompts us to take notice of the composition of the alloy hydroxides/oxides when studying their catalytic properties, which opens an avenue for the rational design and controllable preparation of such amorphous nanomaterials as advanced OER electrocatalysts.

  10. Aqueous ultracapacitors using amorphous MnO2 and reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Mery, Adrien; Ghamouss, Fouad; Autret, Cécile; Farhat, Douaa; Tran-Van, François

    2016-02-01

    Herein, synthesis and characterization of amorphous MnO2 and application in asymmetric aqueous ultracapacitors are reported. Different amorphous manganese oxide (MnO2) materials were synthesized from the reduction of KMnO4 in different media such as ethanol (EtOH) or dimethylformamide (DMF). The electrochemical behavior of amorphous MnO2, labeled MnO2-Et and MnO2-DMF, were studied by using cyclic voltammetry, impedance spectroscopy, and galvanostatic cycling in aqueous electrolyte. XRD, BET, TEM, and SEM characterizations highlighted the amorphous nature and the nanostructuration of these MnO2 materials. BET measurement established that these amorphous MnO2 are mesoporous. In addition, MnO2-Et exhibits a larger specific surface area (168 m2 g-1), a narrower pore diameters distribution with lower diameters compared to MnO2-DMF. These results are in agreement with the electrochemical results. Indeed, MnO2-Et shows a higher specific capacitance and lower impedance in aqueous K2SO4 electrolyte. Furthermore, aqueous asymmetric ultracapacitors were assembled and studied using amorphous MnO2 as positive electrode and reduced graphene oxide (rGO) as negative electrode. These asymmetric systems exhibit an electrochemical stability for more than 20,000 galvanostatic cycles at current density of 1 A g-1 with an operating voltage of 2 V.

  11. Amorphous thin film ruthenium oxide as an electrode material for electrochemical capacitors

    SciTech Connect

    Jow, T.R.; Zheng, J.P.

    1995-12-31

    Ruthenium oxide thin films of an amorphous phase were successfully prepared on a titanium (Ti) substrate at temperatures below 160 C. The sol-gel process using metal alkoxide precursor in nonaqueous solvents was used to prepare these films. The preliminary results showed that a specific capacitance of 430 F/g can be achieved for amorphous ruthenium oxide electrode in sulfuric acid. Films prepared by this method are compared with the films prepared by the thermal decomposition of the aqueous ruthenium chloride solution at temperatures above 300 C. The specific capacitance, the crystalline structure, and the surface morphology of these films as a function of the preparation temperature were also discussed.

  12. Ambient atmosphere-processable, printable Cu electrodes for flexible device applications: structural welding on a millisecond timescale of surface oxide-free Cu nanoparticles

    NASA Astrophysics Data System (ADS)

    Oh, Sang-Jin; Jo, Yejin; Lee, Eun Jung; Lee, Sun Sook; Kang, Young Hun; Jeon, Hye-Ji; Cho, Song Yun; Park, Jin-Seong; Seo, Yeong-Hui; Ryu, Beyong-Hwan; Choi, Youngmin; Jeong, Sunho

    2015-02-01

    Recently, various functional devices based on printing technologies have been of paramount interest, owing to their characteristic processing advantages along with excellent device performance. In particular, printable metallic electrodes have drawn attention in a variety of optoelectronic applications; however, research into printable metallic nanoparticles has been limited mainly to the case of an environmentally stable Ag phase. Despite its earth-abundance and highly conductive nature, the Cu phase, to date, has not been exploited as an ambient atmosphere-processable, printable material due to its critical oxidation problem in air. In this study, we demonstrate a facile route for generating highly conductive, flexible Cu electrodes in air by introducing the well-optimized photonic sintering at a time frame of 10-3 s, at which the photon energy, rather than conventional thermal energy, is instantly provided. It is elucidated here how the surface oxide-free, printed Cu particulate films undergo chemical structural/microstructural evolution depending on the instantly irradiated photon energy, and a successful demonstration is provided of large-area, flexible, printed Cu conductors on various substrates, including polyimide (PI), polyethersulfone (PES), polyethylene terephthalate (PET), and paper. The applicability of the resulting printed Cu electrodes is evaluated via implementation into both flexible capacitor devices and indium-gallium-zinc oxide (IGZO) flexible thin-film transistors.Recently, various functional devices based on printing technologies have been of paramount interest, owing to their characteristic processing advantages along with excellent device performance. In particular, printable metallic electrodes have drawn attention in a variety of optoelectronic applications; however, research into printable metallic nanoparticles has been limited mainly to the case of an environmentally stable Ag phase. Despite its earth-abundance and highly conductive

  13. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOEpatents

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  14. Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Parthiban, S.; Park, K.; Kim, H.-J.; Yang, S.; Kwon, J.-Y.

    2014-11-01

    We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ˜4.3 × 107.

  15. CO2 -Assisted Fabrication of Two-Dimensional Amorphous Molybdenum Oxide Nanosheets for Enhanced Plasmon Resonances.

    PubMed

    Liu, Wei; Xu, Qun; Cui, Weili; Zhu, Chuanhui; Qi, Yuhang

    2017-02-01

    As a remarkable class of plasmonic materials, two dimensional (2D) semiconductor compounds have attracted attention owing to their controlled manipulation of plasmon resonances in the visible light spectrum, which outperforms conventional noble metals. However, tuning of plasmonic resonances for 2D semiconductors remains challenging. Herein, we design a novel method to obtain amorphous molybdenum oxide (MoO3 ) nanosheets, in which it combines the oxidation of MoS2 and subsequent supercritical CO2 -treatment, which is a crucial step for the achievement of amorphous structure of MoO3 . Upon illumination, hydrogen-doped MoO3 exhibits tuned surface plasmon resonances in the visible and near-IR regions. Moreover, a unique behavior of the amorphous MoO3 nanosheets has been found in an optical biosensing system; there is an optimum plasmon resonance after incubation with different BSA concentrations, suggesting a tunable plasmonic device in the near future.

  16. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.

    PubMed

    Liu, Jun; Buchholz, D Bruce; Hennek, Jonathan W; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2010-09-01

    Optically transparent and mechanically flexible thin-film transistors (TF-TFTs) composed exclusively of amorphous metal oxide films are fabricated on plastic substrates by combining an amorphous Ta(2)O(5)/SiO(x) bilayer transparent oxide insulator (TOI) gate dielectric with an amorphous zinc-indium-tin oxide (a-ZITO) transparent oxide semiconductor (TOS) channel and a-ZITO transparent oxide conductor (TOC) electrodes. The bilayer gate dielectric is fabricated by the post-cross-linking of vapor-deposited hexachlorodisiloxane-derived films to form thin SiO(x) layers (v-SiO(x)) on amorphous Ta(2)O(5) (a-Ta(2)O(5)) films grown by ion-assisted deposition at room temperature. The a-Ta(2)O(5)/v-SiO(x) bilayer TOI dielectric integrates the large capacitance of the high dielectric constant a-Ta(2)O(5) layer with the excellent dielectric/semiconductor interfacial compatibility of the v-SiO(x) layer in a-ZITO TOS-based TF-TFTs. These all-amorphous-oxide TF-TFTs, having a channel length and width of 100 and 2000 microm, respectively, perform far better than a-Ta(2)O(5)-only devices and exhibit saturation-regime field-effect mobilities of approximately 20 cm(2)/V x s, on-currents >10(-4) A, and current on-off ratios >10(5). These TFTs operate at low voltages (approximately 4.0 V) and exhibit good visible-region optical transparency and excellent mechanical flexibility.

  17. Design of Amorphous Manganese Oxide@Multiwalled Carbon Nanotube Fiber for Robust Solid-State Supercapacitor.

    PubMed

    Shi, Peipei; Li, Li; Hua, Li; Qian, Qianqian; Wang, Pengfei; Zhou, Jinyuan; Sun, Gengzhi; Huang, Wei

    2017-01-24

    Solid-state fiber-based supercapacitors have been considered promising energy storage devices for wearable electronics due to their lightweight and amenability to be woven into textiles. Efforts have been made to fabricate a high performance fiber electrode by depositing pseudocapacitive materials on the outer surface of carbonaceous fiber, for example, crystalline manganese oxide/multiwalled carbon nanotubes (MnO2/MWCNTs). However, a key challenge remaining is to achieve high specific capacitance and energy density without compromising the high rate capability and cycling stability. In addition, amorphous MnO2 is actually preferred due to its disordered structure and has been proven to exhibit superior electrochemical performance over the crystalline one. Herein, by incorporating amorphous MnO2 onto a well-aligned MWCNT sheet followed by twisting, we design an amorphous MnO2@MWCNT fiber, in which amorphous MnO2 nanoparticles are distributed in MWCNT fiber uniformly. The proposed structure gives the amorphous MnO2@MWCNT fiber good mechanical reliability, high electrical conductivity, and fast ion-diffusion. Solid-state supercapacitor based on amorphous MnO2@MWCNT fibers exhibits improved energy density, superior rate capability, exceptional cycling stability, and excellent flexibility. This study provides a strategy to design a high performance fiber electrode with microstructure control for wearable energy storage devices.

  18. Oxidation induced amorphous stabilization of the subsurface region in Zr-Cu metallic glass

    SciTech Connect

    Lim, K. R.; Park, J. M.; Park, S. H.; Na, M. Y.; Kim, K. C.; Kim, D. H.; Kim, W. T.

    2014-01-20

    In the present study, we demonstrate that selective surface oxidation of Zr{sub 70}Cu{sub 30} metallic glass can stabilize the amorphous structure in the subsurface region of the matrix. The oxidation proceeds by selective oxidation of Zr, forming monoclinic ZrO{sub 2} layer on the surface, and the subsurface layer becomes Cu-enriched due to back diffusion of Cu atoms from the oxide layer. Interestingly, in this system, the composition change in the subsurface region leads to enhancement of glass stability, forming of a double layered surface structure consisted of inner amorphous layer and outer monoclinic ZrO{sub 2} layer even when the remaining matrix is completely crystallized.

  19. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    SciTech Connect

    Flötotto, D. Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-03-03

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.

  20. Photo-oxidation of polymer-like amorphous hydrogenated carbon under visible light illumination

    DOE PAGES

    Baxamusa, Salmaan; Laurence, Ted; Worthington, Matthew; ...

    2015-11-10

    Amorphous hydrogenated carbon (a-C:H), a polymer-like network typically synthesized by plasma chemical vapor deposition, has long been understood to exhibit optical absorption of visible light (λ > 400 nm). In this report we explain that this absorption is accompanied by rapid photo-oxidation (within minutes) that behaves in most respects like classic polymer photo-oxidation with the exception that it occurs under visible light illumination rather than ultraviolet illumination.

  1. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    SciTech Connect

    Kim, Junghwan Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  2. Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

    SciTech Connect

    Kang, Youngho; Song, Hochul; Han, Seungwu; Nahm, Ho-Hyun; Jeon, Sang Ho; Cho, Youngmi

    2014-03-01

    To enlighten microscopic origin of visible-light absorption in transparent amorphous semiconducting oxides, the intrinsic optical property of amorphous InGaZnO{sub 4} is investigated by considering dipole transitions within the quasiparticle band structure. In comparison with the crystalline InGaZnO{sub 4} with the optical gap of 3.6 eV, the amorphous InGaZnO{sub 4} has two distinct features developed in the band structure that contribute to significant visible-light absorption. First, the conduction bands are down-shifted by 0.55 eV mainly due to the undercoordinated In atoms, reducing the optical gap between extended states to 2.8 eV. Second, tail states formed by localized oxygen p orbitals are distributed over ∼0.5 eV near the valence edge, which give rise to substantial subgap absorption. The fundamental understanding on the optical property of amorphous semiconducting oxides based on underlying electronic structure will pave the way for resolving instability issues in recent display devices incorporating the semiconducting oxides.

  3. P-type conductive amorphous oxides of transition metals from solution processing

    NASA Astrophysics Data System (ADS)

    Li, Jinwang; Kaneda, Toshihiko; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

    2012-07-01

    We report a series of solution-processed p-type conductive amorphous Ln-M-O (a-Ln-M-O, where M = Ru, Ir, and Ln is a lanthanide element except Ce) having low resistivities (10-3 to 10-2 Ω cm). These oxides are thermally stable to a high degree, being amorphous up to 800 °C, and processable below 400 °C. Their film surfaces are smooth on the atomic scale, and the process allows patterning simply by direct imprinting without distortion of the pattern after annealing. These properties have high potential for use in printed electronics. The electron configurations of these oxides are apparently different from existing p-type oxides.

  4. Virus-Templated Near-Amorphous Iron Oxide Nanotubes.

    PubMed

    Shah, Sachin N; Khan, Abid A; Espinosa, Ana; Garcia, Miguel A; Nuansing, Wiwat; Ungureanu, Mariana; Heddle, Jonathan G; Chuvilin, Andrey L; Wege, Christina; Bittner, Alexander M

    2016-06-14

    We present a simple synthesis of iron oxide nanotubes, grown under very mild conditions from a solution containing Fe(II) and Fe(III), on rod-shaped tobacco mosaic virus templates. Their well-defined shape and surface chemistry suggest that these robust bionanoparticles are a versatile platform for synthesis of small, thin mineral tubes, which was achieved efficiently. Various characterization tools were used to explore the iron oxide in detail: Electron microscopy (SEM, TEM), magnetometry (SQUID-VSM), diffraction (XRD, TEM-SAED), electron spectroscopies (EELS, EDX, XPS), and X-ray absorption (XANES with EXAFS analysis). They allowed determination of the structure, crystallinity, magnetic properties, and composition of the tubes. The protein surface of the viral templates was crucial to nucleate iron oxide, exhibiting analogies to biomineralization in natural compartments such as ferritin cages.

  5. Review paper: Transparent amorphous oxide semiconductor thin film transistor

    NASA Astrophysics Data System (ADS)

    Kwon, Jang-Yeon; Lee, Do-Joong; Kim, Ki-Bum

    2011-03-01

    Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last few years, especially for large area electronic applications, such as high resolution active matrix liquid crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs), because of their high electron mobility and spatial uniform property. This paper reviews and summarizes recent emerging reports that include potential applications, oxide semiconductor materials, and the impact of the fabrication process on electrical performance. We also address the stability behavior of such devices under bias/illumination stress and critical factors related to reliability, such as the gate insulator, the ambient and the device structure.

  6. New Class of High Temperature Pseudo-Amorphous Oxide Materials

    DTIC Science & Technology

    2003-12-01

    Non- crystalline materials can be synthesized using a variety of techniques such as thermal evaporation, sputtering, glow-discharge decomposition... crystalline materials . Principals of Applied Thin Films, Inc (ATFI) have discovered new solution derived non- crystalline oxide materials which can resist

  7. Oxidative Damage and Energy Metabolism Disorder Contribute to the Hemolytic Effect of Amorphous Silica Nanoparticles

    NASA Astrophysics Data System (ADS)

    Jiang, Lizhen; Yu, Yongbo; Li, Yang; Yu, Yang; Duan, Junchao; Zou, Yang; Li, Qiuling; Sun, Zhiwei

    2016-02-01

    Amorphous silica nanoparticles (SiNPs) have been extensively used in biomedical applications due to their particular characteristics. The increased environmental and iatrogenic exposure of SiNPs gained great concerns on the biocompatibility and hematotoxicity of SiNPs. However, the studies on the hemolytic effects of amorphous SiNPs in human erythrocytes are still limited. In this study, amorphous SiNPs with 58 nm were selected and incubated with human erythrocytes for different times (30 min and 2 h) at various concentrations (0, 10, 20, 50, and 100 μg/mL). SiNPs induced a dose-dependent increase in percent hemolysis and significantly increased the malondialdehyde (MDA) content and decreased the superoxide dismutase (SOD) activity, leading to oxidative damage in erythrocytes. Hydroxyl radical (·OH) levels were detected by electron spin resonance (ESR), and the decreased elimination rates of ·OH showed SiNPs induced low antioxidant ability in human erythrocytes. Na+-K+ ATPase activity and Ca2+-Mg2+ ATPase activity were found remarkably inhibited after SiNP treatment, possibly causing energy sufficient in erythrocytes. Percent hemolysis of SiNPs was significantly decreased in the presence of N-acetyl-cysteine (NAC) and adenosine diphosphate (ADP). It was concluded that amorphous SiNPs caused dose-dependent hemolytic effects in human erythrocytes. Oxidative damage and energy metabolism disorder contributed to the hemolytic effects of SiNPs in vitro.

  8. Model for determination of mid-gap states in amorphous metal oxides from thin film transistors

    NASA Astrophysics Data System (ADS)

    Bubel, S.; Chabinyc, M. L.

    2013-06-01

    The electronic density of states in metal oxide semiconductors like amorphous zinc oxide (a-ZnO) and its ternary and quaternary oxide alloys with indium, gallium, tin, or aluminum are different from amorphous silicon, or disordered materials such as pentacene, or P3HT. Many ZnO based semiconductors exhibit a steep decaying density of acceptor tail states (trap DOS) and a Fermi level (EF) close to the conduction band energy (EC). Considering thin film transistor (TFT) operation in accumulation mode, the quasi Fermi level for electrons (Eq) moves even closer to EC. Classic analytic TFT simulations use the simplification EC-EF> `several'kT and cannot reproduce exponential tail states with a characteristic energy smaller than 1/2 kT. We demonstrate an analytic model for tail and deep acceptor states, valid for all amorphous metal oxides and include the effect of trap assisted hopping instead of simpler percolation or mobility edge models, to account for the observed field dependent mobility.

  9. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

    NASA Astrophysics Data System (ADS)

    Taz, H.; Sakthivel, T.; Yamoah, N. K.; Carr, C.; Kumar, D.; Seal, S.; Kalyanaraman, R.

    2016-06-01

    We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10‑4 Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics.

  10. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

    PubMed Central

    Taz, H.; Sakthivel, T.; Yamoah, N. K.; Carr, C.; Kumar, D.; Seal, S.; Kalyanaraman, R.

    2016-01-01

    We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10−4 Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics. PMID:27298196

  11. Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends

    DTIC Science & Technology

    2015-02-25

    Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends Xinge Yu , Li Zeng , Nanjia Zhou , Peijun Guo , Fengyuan Shi , Donald B...chemical vapor deposition processes. Thus, a key issue for inexpensive large-scale roll-to-roll production is to enable MO TFT manu- facturing with...4. TITLE AND SUBTITLE Ultra-Flexible, ’Invisible’ Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends 5a. CONTRACT

  12. Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications.

    PubMed

    Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C; Litvinov, Dmitri

    2013-06-15

    This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures.

  13. Inverted polymer solar cells with amorphous indium zinc oxide as the electron-collecting electrode

    SciTech Connect

    Cheun, Hyeunseok; Kim, Jungbae; Zhou, Yinhua; Fang, Yunnan; Dindar, Amir; Shim, Jae Won; Fuentes-Hernandez, Canek; Sandhage, Kenneth H.; Kippelen, Bernard

    2010-09-17

    We report on the fabrication and performance of polymer-based inverted solar cells utilizing amorphous indium zinc oxide (a-IZO) as the electron-collecting electrode. Amorphous IZO films of 200 nm thickness were deposited by room temperature sputtering in a high-purity argon atmosphere. The films possessed a high optical transmittance in the visible region (≥ 80%), a low resistivity (3.3 × 10-4 Ωcm), a low surface roughness (root mean square = 0.68 nm), and a low work function (4.46 ± 0.02 eV). Inverted solar cells with the structure a-IZO/P3HT: PCBM/PEDOT:PSS/Ag exhibited a power conversion efficiency of 3% estimated for AM 1.5G, 100 mW/cm2 illumination.

  14. Water oxidation catalysis: an amorphous quaternary Ba-Sr-Co-Fe oxide as a promising electrocatalyst for the oxygen-evolution reaction.

    PubMed

    Zhang, Cuijuan; Berlinguette, Curtis P; Trudel, Simon

    2016-01-25

    We present an amorphous quaternary Ba-Sr-Co-Fe oxide (a-BSCF) with a specific stoichiometry, readily fabricated via a photochemical decomposition method. a-BSCF demonstrates high catalytic activity towards the oxygen-evolution reaction (OER).

  15. Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen

    SciTech Connect

    Ivanova, E. V. Zamoryanskaya, M. V.; Pustovarov, V. A.; Aliev, V. Sh.; Gritsenko, V. A.; Yelisseyev, A. P.

    2015-04-15

    Cathodo- and photoluminescence of amorphous nonstoichiometric films of hafnium oxide are studied with the aim to verify the hypothesis that oxygen vacancies are responsible for the luminescence. To produce oxygen vacancies, hafnium oxide was enriched in surplus metal during synthesis. To reduce the oxygen concentration, the film was annealed in oxygen. A qualitative control of the oxygen concentration was carried out by the refractive index. In the initial, almost stoichiometric films we observed a 2.7-eV band in cathodoluminescence. Annealing in oxygen results in a considerable increase in its intensity, as well as in the appearance of new bands at 1.87, 2.14, 3.40, and 3.6 eV. The observed emission bands are supposed to be due to single oxygen vacancies and polyvacancies in hafnium oxide. The luminescence increase under annealing in an oxygen atmosphere may be a result of the emission quenching effect.

  16. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    SciTech Connect

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; Esvan, Jerome; Lafont, Marie-Christine; Scheid, Emmanuel; Veith, Gabriel M.; Vahlas, Constantin

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.

  17. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    DOE PAGES

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; ...

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties butmore » an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.« less

  18. Energy-dependent relaxation time in quaternary amorphous oxide semiconductors probed by gated Hall effect measurements

    NASA Astrophysics Data System (ADS)

    Socratous, Josephine; Watanabe, Shun; Banger, Kulbinder K.; Warwick, Christopher N.; Branquinho, Rita; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Sirringhaus, Henning

    2017-01-01

    Despite the success of exploiting the properties of amorphous oxide semiconductors for device applications, the charge transport in these materials is still not clearly understood. The observation of a definite Hall voltage suggests that electron transport in the conduction band is free-electron-like. However, the temperature dependence of the Hall and field-effect mobilities cannot be explained using a simple bandlike model. Here, we perform gated Hall effect measurements in field-effect transistors, which allow us to make two independent estimates of the charge carrier concentration and determine the Hall factor providing information on the energy dependence of the relaxation time. We demonstrate that the Hall factor in a range of sputtered and solution-processed quaternary amorphous oxides, such as a-InGaZnO, is close to two, while in ternary oxides, such as InZnO, it is near unity. This suggests that quaternary elements like Ga act as strong ionized impurity scattering centers in these materials.

  19. Mesoporous amorphous binary Ru-Ti oxides as bifunctional catalysts for non-aqueous Li-O2 batteries.

    PubMed

    Kim, Jisu; Jo, HeeGoo; Wu, Mihye; Yoon, Dae-Ho; Kang, Yongku; Jung, Ha-Kyun

    2017-04-07

    Mesoporous amorphous binary Ru-Ti oxides were prepared as bifunctional catalysts for non-aqueous Li-O2 batteries, and their electrochemical performance was investigated for the first time. A Li-O2 battery with mesoporous amorphous binary Ru-Ti oxides exhibited a remarkably high capacity of 27100 mAh g(-1) as well as a reduced overpotential. A GITT analysis suggested that the introduction of amorphous TiO2 to amorphous RuO2 was responsible for the enhanced kinetics toward both the oxygen reduction reaction and oxygen evolution reaction. Excellent cyclic stability up to 230 cycles was achieved, confirming the applicability of the new bifunctional catalyst in non-aqueous Li-O2 batteries.

  20. Mesoporous amorphous binary Ru–Ti oxides as bifunctional catalysts for non-aqueous Li–O2 batteries

    NASA Astrophysics Data System (ADS)

    Kim, Jisu; Jo, HeeGoo; Wu, Mihye; Yoon, Dae-Ho; Kang, Yongku; Jung, Ha-Kyun

    2017-04-01

    Mesoporous amorphous binary Ru–Ti oxides were prepared as bifunctional catalysts for non-aqueous Li–O2 batteries, and their electrochemical performance was investigated for the first time. A Li–O2 battery with mesoporous amorphous binary Ru–Ti oxides exhibited a remarkably high capacity of 27100 mAh g‑1 as well as a reduced overpotential. A GITT analysis suggested that the introduction of amorphous TiO2 to amorphous RuO2 was responsible for the enhanced kinetics toward both the oxygen reduction reaction and oxygen evolution reaction. Excellent cyclic stability up to 230 cycles was achieved, confirming the applicability of the new bifunctional catalyst in non-aqueous Li–O2 batteries.

  1. Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

    NASA Astrophysics Data System (ADS)

    Xie, Haiting; Wu, Qi; Xu, Ling; Zhang, Lei; Liu, Guochao; Dong, Chengyuan

    2016-11-01

    The amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with the double-stacked channel layers (DSCL) combing the amorphous InZnO (a-IZO) films and the nitrogen-doped amorphous InGaZnO (a-IGZO:N) films were proposed and fabricated, which showed the excellent performance with the field-effect mobility of 49.6 cm2 V-1 s-1 and the subthreshold swing of 0.5 V/dec. More interestingly, very stable properties were observed in the bias stress and light illumination tests for these a-IZO/a-IGZO:N TFTs, as seemed to be the evident improvements over the prior arts. The improved performance and stability might be mainly due to the hetero-junctions in the channel layers and less interface/bulk trap density from the in situ nitrogen doping process in the a-IGZO layers. In addition, the passivation effect of the a-IGZO:N films also made some contributions to the stable properties exhibited in these novel DSCL TFTs.

  2. Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

    NASA Astrophysics Data System (ADS)

    Pu, Haifeng; Li, Guifeng; Feng, Jiahan; Liu, Baoying; Zhang, Qun

    2011-09-01

    Thin film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) as channel layers and poly-4-vinylphenol as dielectric layers were fabricated. Transmission curves show that the double-layer structure of the a-IZO layer and the poly-4-vinylphenol layer exhibits the antireflection effect. It was found that post heat-treatment at relatively low temperature will improve the electrical performance of the transistors. TFT devices with saturation mobility of 25.4 cm2 V-1 s-1, threshold voltage of 4.0 V, subthreshold swing value of 0.88 V/decade and current on/off ratio of 106 were obtained.

  3. Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Liu, Po-Tsun; Chou, Yi-Teh; Teng, Li-Feng

    2009-06-01

    The study investigated the photoreaction behavior of amorphous indium-zinc oxide thin film transistor (a-IZO TFT), which was thought to be insensitive to visible light. The obvious threshold voltage shift was observed after light illumination, and it exhibited slow recovery while returning to initial status. The photoreaction mechanism is well explained by the dynamic equilibrium of charge exchange reaction between O2(g) and O2- in a-IZO layer. A charge pumping technique is used to confirm the mechanism and accelerate recoverability. Using knowledge of photoreaction behavior, an operation scheme of photosensing elements consist of a-IZO TFT is also demonstrated in this work.

  4. Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Koide, Hirotaka; Nagao, Yuki; Koumoto, Kunihito; Takasaki, Yuka; Umemura, Tomonari; Kato, Takeharu; Ikuhara, Yuichi; Ohta, Hiromichi

    2010-11-01

    To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases but then gradually decreases as Vg increases, clearly suggesting the antiparabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.

  5. Amorphous iron–chromium oxide nanoparticles with long-term stability

    SciTech Connect

    Iacob, Mihail; Cazacu, Maria; Turta, Constantin; Doroftei, Florica; Botko, Martin; Čižmár, Erik; Zeleňáková, Adriana; Feher, Alexander

    2015-05-15

    Highlights: • Fe–Cr oxide nanoparticles with pre-established metals ratio were obtained. • The amorphous state and its long-term stability were highlighted by X-ray diffraction. • The average diameter of dried nanoparticles was 3.5 nm, as was estimated by TEM, AFM. • In hexane dispersion, nanoparticles with diameter in the range 2.33–4.85 nm were found. • Superparamagnetic state of NPs co-exists with diamagnetism of the organic layer. - Abstract: Iron–chromium nanoparticles (NPs) were obtained through the thermal decomposition of μ{sub 3}-oxo heterotrinuclear (FeCr{sub 2}O) acetate in the presence of sunflower oil and dodecylamine (DA) as surfactants. The average diameter of the NPs was 3.5 nm, as estimated on the basis of transmission electron microscopy and atomic force microscopy images. Both techniques revealed the formation of roughly approximated spheres with some irregularities and agglomerations in larger spherical assemblies of 50–100 nm. In hexane, NPs with diameters in the 2.33–4.85 nm range are individually dispersed, as emphasized by dynamic light scattering measurements. The amorphous nature of the product was emphasized by X-ray powder diffraction. The study of the magnetic properties shows the presence of superparamagnetic state of iron–chromium oxide NPs and the diamagnetic contribution from DA layer forming a shell of NPs.

  6. Kinetics of oxidation of azobenzene nitrene with molecular oxygen in amorphous polymers

    SciTech Connect

    Kondratenko, E.V.; Bolshakov, B.V.; Tolkatchev, V.A.

    1996-12-31

    Kinetics of disappearance of azobenzene nitrene at 115-120 K in polymethyl methacrylate, poly styrene, polycarbonate and polysulfone films saturated with oxygen has been studied. For condition of oxygen excess the disappearance of nitrous is shown to be a result only of the reaction with the dissolved gas. Kinetics of the process is identical to that of the oxidation of macro radicals in the same polymer. The nonexponential character of kinetic curves is shown to be related with the existence of the rate constant distribution. The values of the width of distribution range in the narrow interval being practically the same for various polymers. The data about the width of the distribution function for the oxidation of macro radicals in amorphous polymers known from literature also fit into this interval. All the particles participating in the reaction with the experimental accuracy have the same dependence of the rate constant on temperature. The activation energies of reactions in various amorphous polymers have very close values.

  7. Stoichiometry determined exchange interactions in amorphous ternary transition metal oxides: Theory and experiment

    SciTech Connect

    Hu, Shu-jun; Yan, Shi-shen Zhang, Yun-peng; Zhao, Ming-wen; Kang, Shi-shou; Mei, Liang-mo

    2014-07-28

    Amorphous transition metal oxides exhibit exotic transport and magnetic properties, while the absence of periodic structure has long been a major obstacle for the understanding of their electronic structure and exchange interaction. In this paper, we have formulated a theoretical approach, which combines the melt-quench approach and the spin dynamic Monte-Carlo simulations, and based on it, we explored amorphous Co{sub 0.5}Zn{sub 0.5}O{sub 1−y} ternary transition metal oxides. Our theoretical results reveal that the microstructure, the magnetic properties, and the exchange interactions of Co{sub 0.5}Zn{sub 0.5}O{sub 1−y} are strongly determined by the oxygen stoichiometry. In the oxygen-deficient sample (y > 0), we have observed the long-range ferromagnetic spin ordering which is associated with the non-stoichiometric cobalt-rich region rather than metallic clusters. On the other hand, the microstructure of stoichiometric sample takes the form of continuous random networks, and no long-range ferromagnetism has been observed in it. Magnetization characterization of experimental synthesized Co{sub 0.61}Zn{sub 0.39}O{sub 1−y} films verifies the relation between the spin ordering and the oxygen stoichiometry. Furthermore, the temperature dependence of electrical transport shows a typical feature of semiconductors, in agreement with our theoretical results.

  8. Amorphous Vanadium Oxide/Carbon Composite Positive Electrode for Rechargeable Aluminum Battery.

    PubMed

    Chiku, Masanobu; Takeda, Hiroki; Matsumura, Shota; Higuchi, Eiji; Inoue, Hiroshi

    2015-11-11

    Amorphous vanadium oxide/carbon composite (V2O5/C) was first applied to the positive electrode active material for rechargeable aluminum batteries. Electrochemical properties of V2O5/C were investigated by cyclic voltammetry and charge-discharge tests. Reversible reduction/oxidation peaks were observed for the V2O5/C electrode and the rechargeable aluminum cell showed the maximum discharge capacity over 200 mAh g(-1) in the first discharging. The XPS analyses after discharging and the following charging exhibited that the redox of vanadium ion in the V2O5/C active material occurred during discharging and charging, and the average valence of V changed between 4.14 and 4.85.

  9. Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 °C

    NASA Astrophysics Data System (ADS)

    Chong, Eugene; Chun, Yoon Soo; Lee, Sang Yeol

    2010-09-01

    Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 °C. The a-SIZO TFT exhibited a field effect mobility of 21.6 cm2/V s and an on/off ratio of 107. The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage (Vth) compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in Vth in a-SIZO TFT without deteriorating mobility of higher than 21.6 cm2/V s.

  10. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect

    Morales-Masis, M. Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  11. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    PubMed Central

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, B.; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-01-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned. PMID:26670421

  12. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    SciTech Connect

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

  13. Estimation of the composition parameter of electrochemically colored amorphous hydrogen tungsten oxide films

    NASA Astrophysics Data System (ADS)

    Kaneko, Hiroko; Miyake, Kiyoshi

    1989-07-01

    The electrical and optical steady state observed in electrochemical coloration has been studied using asymmetric cells consisting of evaporated amorphous tungsten oxide films with 350-6000 Å thickness. The counter electrode used is indium wire, steel wire, or antimony-tin oxide film, and the electrolyte is a 1-N H2SO4 aqueous solution containing 10 vol % glycerol. The current and optical transmittance of the cells decrease with increasing time during coloration, and simultaneously reach a steady state. The optical density (λ=0.5 μm) in the steady state is proportional to the thickness of the tungsten oxide film, and the absorption coefficient at λ=0.5 μm of the colored oxide film in the state is approximately 9.0×104 cm-1. The effective charges which contribute to the coloration of films calculated from the charge injected until the electro-optical steady state were found to be 1.03-1.20×103 C/cm3. Assuming that the evaporated tungsten oxide films used have a distorted ReO3 structure, and that a hydrogen tungsten bronze HxWO3 is formed by coloration, the composition parameter x calculated from the average value of the effective charge, is 0.36, which is comparable with that of hydrogen tungsten bronze H0.33WO3 obtained for the colored crystalline WO3 films.

  14. Thermal transport in graphene oxide--from ballistic extreme to amorphous limit.

    PubMed

    Mu, Xin; Wu, Xufei; Zhang, Teng; Go, David B; Luo, Tengfei

    2014-01-28

    Graphene oxide is being used in energy, optical, electronic and sensor devices due to its unique properties. However, unlike its counterpart - graphene - the thermal transport properties of graphene oxide remain unknown. In this work, we use large-scale molecular dynamics simulations with reactive potentials to systematically study the role of oxygen adatoms on the thermal transport in graphene oxide. For pristine graphene, highly ballistic thermal transport is observed. As the oxygen coverage increases, the thermal conductivity is significantly reduced. An oxygen coverage of 5% can reduce the graphene thermal conductivity by ~90% and a coverage of 20% lower it to ~8.8 W/mK. This value is even lower than the calculated amorphous limit (~11.6 W/mK for graphene), which is usually regarded as the minimal possible thermal conductivity of a solid. Analyses show that the large reduction in thermal conductivity is due to the significantly enhanced phonon scattering induced by the oxygen defects which introduce dramatic structural deformations. These results provide important insight to the thermal transport physics in graphene oxide and offer valuable information for the design of graphene oxide-based materials and devices.

  15. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    DOE PAGES

    Malasi, A.; Taz, H.; Farah, A.; ...

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergentmore » semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.« less

  16. Thermal Transport in Graphene Oxide – From Ballistic Extreme to Amorphous Limit

    PubMed Central

    Mu, Xin; Wu, Xufei; Zhang, Teng; Go, David B.; Luo, Tengfei

    2014-01-01

    Graphene oxide is being used in energy, optical, electronic and sensor devices due to its unique properties. However, unlike its counterpart – graphene – the thermal transport properties of graphene oxide remain unknown. In this work, we use large-scale molecular dynamics simulations with reactive potentials to systematically study the role of oxygen adatoms on the thermal transport in graphene oxide. For pristine graphene, highly ballistic thermal transport is observed. As the oxygen coverage increases, the thermal conductivity is significantly reduced. An oxygen coverage of 5% can reduce the graphene thermal conductivity by ~90% and a coverage of 20% lower it to ~8.8 W/mK. This value is even lower than the calculated amorphous limit (~11.6 W/mK for graphene), which is usually regarded as the minimal possible thermal conductivity of a solid. Analyses show that the large reduction in thermal conductivity is due to the significantly enhanced phonon scattering induced by the oxygen defects which introduce dramatic structural deformations. These results provide important insight to the thermal transport physics in graphene oxide and offer valuable information for the design of graphene oxide-based materials and devices. PMID:24468660

  17. Thermal oxidation of amorphous germanium thin films on SiO2 substrates

    NASA Astrophysics Data System (ADS)

    de los Santos Valladares, L.; Bustamante Dominguez, A.; Ionescu, A.; Brown, A.; Sepe, A.; Steiner, U.; Avalos Quispe, O.; Holmes, S.; Majima, Y.; Langford, R.; Barnes, C. H. W.

    2016-12-01

    In this work we report the thermal oxidation of amorphous germanium (a-Ge) thin films (140 nm thickness) in air. Following fabrication by conventional thermal evaporation on SiO2 substrates, the samples were annealed in air at different temperatures ranging from 300 to 1000 °C. By means of x-ray diffraction, x-ray reflectivity, synchrotron grazing-incidence wide-angle x-ray scattering and cross-sectional transmission electron microscopy analysis it is found that the a-Ge films abruptly crystallize at 475 °C, while simultaneously increasing the thickness of the oxide (GeO2) in a layer by layer fashion. X-ray photoemission spectroscopy reveals that the oxidation state of the Ge atoms in the GeO2 layer is 4+. However, a reaction at the GeO2/Ge interface occurs between 500 and 550 °C reducing the oxide layer to GeO x (x < 2) and containing Ge2+ and Ge+. The thickness of the oxide layer grows with the annealing temperature following an Arrhenius behavior with an activation energy of 0.82 ± 0.09 eV up to 500 °C. Remarkably, we observed simultaneous enhancement of the oxidation and crystallization of the a-Ge in the temperature interval 450 °C-500 °C, in which the oxidation rate reaches a maximum of around 0.8 nm °C-1 at around 500 °C.

  18. Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

    DOE PAGES

    Donaldson, Olivia K.; Hattar, Khalid; Trelewicz, Jason R.

    2016-07-04

    Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to themore » stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.« less

  19. Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

    SciTech Connect

    Donaldson, Olivia K.; Hattar, Khalid; Trelewicz, Jason R.

    2016-07-04

    Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.

  20. Crystallization kinetics of amorphous tin-doped indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Ow-Yang, Cleva Wan

    The crystallization kinetics of amorphous tin-doped indium oxide thin films grown by dc magnetron sputtering and electron beam evaporation was investigated using time-resolved laser reflectivity in conjunction with TEM analyses. The as-grown films were established to be amorphous using glancing angle x-ray and selected area electron diffraction. The samples were then annealed at temperatures ranging from (˜111-167sp°C) some in a range of environments (oxidizing (Nsb2), strongly oxidizing (air), and reducing (wet/dry forming gas). Gross-sectional TEM analysis reveals a columnar as-sputtered microstructure that is retained after annealing to complete transformation. In contrast a-ITO films grown by evaporation show a uniformly dense microstructure. Annealing evaporated films in air produced films containing a wide distribution in grain sizes, while annealing in the more reducing environments yielded polycrystalline films with a narrow grain size distribution centered at 15 nm. Time-resolved laser reflectivity was an advantageous tool for monitoring the progress of the crystallization transformation because the technique generates quantifiable data while allowing real-time, non-contact observation. Plotting the transformation rate as a function of annealing temperature demonstrated the amorphous-to-crystalline transformation to be a thermally activated process. The energy required to crystallize sputtered a-ITO films in flowing Nsb2 is much lower than that for evaporated alpha-ITO films also in flowing Nsb2. XRD spectra of the as-sputtered a-ITO reveals the presence of an indium metal phase, which is not observed in the as-evaporated a-ITO films. The activation energy is most likely dependent on the presence of In metal, which serves as a catalyst for lowering the energy barrier. This is confirmed by the reduction in energy needed to transform evaporated a-ITO film in a reducing environment. In this study, the pre- and post-anneal microstructures were examined to

  1. Codeposition of amorphous zinc tin oxide using high power impulse magnetron sputtering: characterisation and doping

    NASA Astrophysics Data System (ADS)

    Tran, H. N.; Mayes, E. L. H.; Murdoch, B. J.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.; Holland, A. S.; Partridge, J. G.

    2017-04-01

    Thin film zinc tin oxide (ZTO) has been energetically deposited at 100 °C using high power impulse magnetron sputtering (HiPIMS). Reactive co-deposition from Zn (HiPIMS mode) and Sn (DC magnetron sputtering mode) targets yielded a gradient in the Zn:Sn ratio across a 4-inch diameter sapphire substrate. The electrical and optical properties of the film were studied as a function of composition. As-deposited, the films were amorphous, transparent and semi-insulating. Hydrogen was introduced by post-deposition annealing (1 h, 500 °C, 100 mTorr H2) and resulted in significantly increased conductivity with no measurable structural alterations. After annealing, Hall effect measurements revealed n-type carrier concentrations of ∼1 × 1017 cm‑3 and mobilities of up to 13 cm2 V‑1 s–1. These characteristics are suitable for device applications and proved stable. X-ray photoelectron spectroscopy was used to explore the valence band structure and to show that downward surface band-bending resulted from OH attachment. The results suggest that HiPIMS can produce dense, high quality amorphous ZTO suitable for applications including transparent thin film transistors.

  2. Tailoring the optical and hydrophobic property of zinc oxide nanorod by coating with amorphous graphene

    NASA Astrophysics Data System (ADS)

    Pahari, D.; Das, N. S.; Das, B.; Chattopadhyay, K. K.; Banerjee, D.

    2016-09-01

    Zinc oxide (ZnO) nanorods were synthesized at room temperature on potassium permanganate activated silicon and glass substrate by simple chemical method using zinc acetate as precursor. To modify the surface energy of the as prepared ZnO thin films the samples were coated with amorphous graphene (a-G) synthesized by un-zipping of chemically synthesized amorphous carbon nanotubes (a-CNTs). All the pure and coated samples were characterized by x-ray diffraction, field emission scanning electron microscope, Raman spectroscopy, and Fourier transformed infrared spectroscopy. The roughness analysis of the as prepared samples was done by atomic force microscopic analysis. The detail optical properties of all the samples were studied with the help of a UV-Visible spectrophotometer. The surface energy of the as prepared pure and coated samples was calculated by measuring the contact angle of two different liquids. It is seen that the water repellence of ZnO nanorods got increased after they are being coated with a-Gs. Also even after UV irradiation the contact angle remain same unlike the case for the uncoated sample where the contact angle gets decreased significantly after UV irradiation. Existing Cassie-Wenzel model has been employed along with the Owen's approach to determine the different components of surface energy.

  3. Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

    NASA Astrophysics Data System (ADS)

    Bubel, S.; Meyer, S.; Kunze, F.; Chabinyc, M. L.

    2013-10-01

    In low-temperature solution processed amorphous zinc oxide (a-ZnO) thin films, we show the thin film transistor (TFT) characteristics for the trap-filled limit (TFL), when the quasi Fermi energy exceeds the conduction band edge and all tail-states are filled. In order to apply gate fields that are high enough to reach the TFL, we use an ionic liquid tape gate. Performing capacitance voltage measurements to determine the accumulated charge during TFT operation, we find the TFL at biases higher than predicted by the electronic structure of crystalline ZnO. We conclude that the density of states in the conduction band of a-ZnO is higher than in its crystalline state. Furthermore, we find no indication of percolative transport in the conduction band but trap assisted transport in the tail-states of the band.

  4. Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Park, Jaechul; Song, Ihun; Kim, Sunil; Kim, Sangwook; Kim, Changjung; Lee, Jaecheol; Lee, Hyungik; Lee, Eunha; Yin, Huaxiang; Kim, Kyoung-Kok; Kwon, Kee-Won; Park, Youngsoo

    2008-08-01

    We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm2/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO active layer to reduce the series resistance. After Ar plasma treatment, the surface of the source/drain region was divided into In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of 1 kΩ/◻ for a film thickness of over 40 nm. The interface between the source/drain Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact resistivity of 50 μΩ cm2.

  5. Reaction of Formic Acid over Amorphous Manganese Oxide Catalytic Systems: An In Situ Study

    SciTech Connect

    J Durand; S Senanayake; S Suib; D Mullins

    2011-12-31

    The interaction of formic acid with amorphous manganese oxide (AMO) is investigated using in situ photoelectron and infrared spectroscopy techniques. Soft X-ray photoelectron spectroscopy (sXPS) and in situ FTIR illustrate two possible modes of formate bound species at the AMO surface. Two peaks in the IR region from 1340-1390 cm{sup -1} are indicative of formate species bound to the surface in a bidentate configuration. However, a 224 cm{sup -1} band gap between v{sub s}OCO and v{sub as}OCO suggests formate is bound in a bridging configuration. Temperature-programmed desorption studies confirm the formate bound species desorbs as carbon dioxide from the surface at multiple binding sites. At temperatures above 700 K, the presence of K{sup +} {hor_ellipsis} OC complex suggests the bound species interacts at vacant sites related to framework oxygen and cation mobility.

  6. Reaction of Formic Acid over Amorphous Manganese Oxide Catalytic Systems: An In Situ Study

    SciTech Connect

    Durand, Jason; Senanayake, Sanjaya D; Mullins, David R; Suib, Steven

    2010-01-01

    The interaction of formic acid with amorphous manganese oxide (AMO) is investigated using in situ photoelectron and infrared spectroscopy techniques. Soft X-ray photoelectron spectroscopy (sXPS) and in situ FTIR illustrate two possible modes of formate bound species at the AMO surface. Two peaks in the IR region from 1340-1390 cm{sup -1} are indicative of formate species bound to the surface in a bidentate configuration. However, a 224 cm{sup -1} band gap between v{sub s}OCO and v{sub as}OCO suggests formate is bound in a bridging configuration. Temperature-programmed desorption studies confirm the formate bound species desorbs as carbon dioxide from the surface at multiple binding sites. At temperatures above 700 K, the presence of K{sup +} {hor_ellipsis} OC complex suggests the bound species interacts at vacant sites related to framework oxygen and cation mobility.

  7. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    SciTech Connect

    Cho, Byungsu; Choi, Yonghyuk; Shin, Seokyoon; Jeon, Heeyoung; Seo, Hyungtak; Jeon, Hyeongtag

    2014-01-27

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  8. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    NASA Astrophysics Data System (ADS)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  9. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    SciTech Connect

    Xu, Rui; He, Jian; Song, Yang; Li, Wei; Zaslavsky, A.; Paine, D. C.

    2014-09-01

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ∼10{sup −2 }Ω cm{sup 2}, ∼3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ∼27 cm{sup 2}/V s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  10. Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

    SciTech Connect

    Seo, Hyungtak; Cho, Young-Je; Bobade, Santosh M.; Park, Kyoung-Youn; Choi, Duck-Kyun; Kim, Jinwoo; Lee, Jaegab

    2010-05-31

    We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to approx10{sup 18} cm{sup -3} from the background level of 10{sup 16} cm{sup -3}, as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at approx10{sup 8} and field-effect mobility at 22.7 cm{sup 2}/V s.

  11. Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide.

    PubMed

    Eisenberg, David; Ahn, Hyun S; Bard, Allen J

    2014-10-08

    n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks this undesired back reduction and dramatically improves the photoelectrochemical performance of the electrode. Water oxidation photocurrent increases by up to 5.5 times, and its onset potential shifts negatively by ∼500 mV. In addition to blocking solution-mediated recombination at the substrate, the a-TiO2 film-which is found to lack any photocatalytic activity in itself-is hypothesized to react with surface defects and deactivate them toward surface recombination. The proposed treatment is simple and effective, and it may easily be extended to a wide variety of thin-film photoelectrodes.

  12. Atomistic Modeling of Mechanical Loss in Pure and Doped Amorphous Oxides

    NASA Astrophysics Data System (ADS)

    Trinastic, Jonathan; Hamdan, Rashid; Cheng, Hai-Ping

    2014-03-01

    The mechanical dissipation in the oxide coatings of many precision measurement systems is a major source of thermal noise that limits the performance of such devices. A good candidate for a coating material to reduce the mechanical loss is tantala (Ta2O5) doped with titania (TiO2). Here, we numerically calculate the mechanical loss (internal friction) in these and other promising oxides based on the double well model. Using classical, atomistic molecular dynamics simulations, we estimate the density of double wells in the energy landscape of the amorphous oxides and the distribution of barrier heights, in addition to the deformation potentials, the elastic constants and vibrational frequencies at both the bottom of the potential wells and at the saddle points, all of which are relevant to the internal friction calculation. We use two versions of the bisection method to find the double well densities and distributions. All methods used in these calculations are implemented in DL-POLY molecular dynamics simulation software. These calculations will provide experimentalists with a better guide into which material combinations might be better choice for reducing the mechanical loss.

  13. Linear topology in amorphous metal oxide electrochromic networks obtained via low-temperature solution processing

    NASA Astrophysics Data System (ADS)

    Llordés, Anna; Wang, Yang; Fernandez-Martinez, Alejandro; Xiao, Penghao; Lee, Tom; Poulain, Agnieszka; Zandi, Omid; Saez Cabezas, Camila A.; Henkelman, Graeme; Milliron, Delia J.

    2016-12-01

    Amorphous transition metal oxides are recognized as leading candidates for electrochromic window coatings that can dynamically modulate solar irradiation and improve building energy efficiency. However, their thin films are normally prepared by energy-intensive sputtering techniques or high-temperature solution methods, which increase manufacturing cost and complexity. Here, we report on a room-temperature solution process to fabricate electrochromic films of niobium oxide glass (NbOx) and `nanocrystal-in-glass’ composites (that is, tin-doped indium oxide (ITO) nanocrystals embedded in NbOx glass) via acid-catalysed condensation of polyniobate clusters. A combination of X-ray scattering and spectroscopic characterization with complementary simulations reveals that this strategy leads to a unique one-dimensional chain-like NbOx structure, which significantly enhances the electrochromic performance, compared to a typical three-dimensional NbOx network obtained from conventional high-temperature thermal processing. In addition, we show how self-assembled ITO-in-NbOx composite films can be successfully integrated into high-performance flexible electrochromic devices.

  14. Linear topology in amorphous metal oxide electrochromic networks obtained via low-temperature solution processing.

    PubMed

    Llordés, Anna; Wang, Yang; Fernandez-Martinez, Alejandro; Xiao, Penghao; Lee, Tom; Poulain, Agnieszka; Zandi, Omid; Saez Cabezas, Camila A; Henkelman, Graeme; Milliron, Delia J

    2016-12-01

    Amorphous transition metal oxides are recognized as leading candidates for electrochromic window coatings that can dynamically modulate solar irradiation and improve building energy efficiency. However, their thin films are normally prepared by energy-intensive sputtering techniques or high-temperature solution methods, which increase manufacturing cost and complexity. Here, we report on a room-temperature solution process to fabricate electrochromic films of niobium oxide glass (NbOx) and 'nanocrystal-in-glass' composites (that is, tin-doped indium oxide (ITO) nanocrystals embedded in NbOx glass) via acid-catalysed condensation of polyniobate clusters. A combination of X-ray scattering and spectroscopic characterization with complementary simulations reveals that this strategy leads to a unique one-dimensional chain-like NbOx structure, which significantly enhances the electrochromic performance, compared to a typical three-dimensional NbOx network obtained from conventional high-temperature thermal processing. In addition, we show how self-assembled ITO-in-NbOx composite films can be successfully integrated into high-performance flexible electrochromic devices.

  15. A possible method for the characterization of amorphous slags: Recovery of refractory metal oxides from tin slags

    NASA Astrophysics Data System (ADS)

    Gaballah, I.; Allain, E.; Meyer-Joly, M.-Ch.; Malau, K.

    1992-06-01

    As X-ray, neutron scattering, and vibrational spectroscopy are not useful for amorphous solids characterization, microprobe analysis is used in determining the composition of these materials. The correlation coefficient matrix between the slag’s elements is obtained by a simple computer program which is commercially available. This matrix is employed for the constitution of the neighborhood of an element, which may be called the “pseudo-structure” (PS). The proposed method is a statistical view of the probable associations between the elements. It gives an insight into the amorphous solids' structure. The lixiviation of tin slags in order to recover the refractory metals they contain is used to illustrate the importance of the PS. A multistage acid-basic (AB) leaching leads to the dissolution of the matrix composed of Ca, Al, Fe, Mn, Si, ... oxides and the concentration of refractory metal oxides in the residues. The optimum tantalum and niobium recovery rates are 93 and 78 pct, respectively. The results of this research indicate that the leaching of the amorphous tin slag is a structure-sensitive operation. However, one may emphasize that the PS of amorphous solids is a simplification of the real neighborhood of ele-ments. It may be considered as a complement to other methods of investigation of the amorphous solids and may facilitate the hydrometallurgical process planning.

  16. Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

    PubMed

    Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

    2016-05-04

    Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures.

  17. Use of an amorphous iron oxide hydrated as catalyst for hydrogen peroxide oxidation of ferulic acid in water.

    PubMed

    Andreozzi, Roberto; Canterino, Marisa; Caprio, Vincenzo; Di Somma, Ilaria; Marotta, Raffaele

    2008-04-01

    The abatement of ferulic acid (FA), a polyphenolic constituent of olive mill wastewater, is studied in the pH range 5.0-7.0 by using hydrogen peroxide and an amorphous iron oxide as catalyst. The effect of pH, catalyst load, hydrogen peroxide and substrate starting concentrations is assessed during the investigation. A suitable reaction scheme is developed and used to build a mathematical model which satisfactorily describes the system's behavior. Kinetic constants for the proposed scheme as well as the total active site concentration of the catalyst in the studied pH range are estimated. The occurrence of internal mass-transfer limitation for the adopted granulometric fraction of the catalyst is demonstrated.

  18. Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation

    NASA Astrophysics Data System (ADS)

    Lee, Sunghwan; Paine, David C.

    2013-02-01

    The mechanism of native defect doping in amorphous In-Zn-O (a-IZO) has not previously been established but is likely associated with native oxygen defect doping. We have used high pressure oxidation and defect equilibrium analysis to show a -1/6 power dependence of carrier density on oxygen fugacity in a-IZO. This dependency is predicted for oxygen vacancy-like donor defects. Extrapolation of equilibrium constants established at high pressures to atmospheric pressure reveals that the equilibrium carrier density in a-IZO at 200 °C is higher (>1020/cm3) than typical as-deposited channel carrier densities (<1017/cm3). This is consistent with observed increases in channel carrier density and negative threshold voltage shift in annealed a-IZO thin film transistor devices.

  19. A tunable amorphous p-type ternary oxide system: The highly mismatched alloy of copper tin oxide

    SciTech Connect

    Isherwood, Patrick J. M. Walls, John M.; Butler, Keith T.; Walsh, Aron

    2015-09-14

    The approach of combining two mismatched materials to form an amorphous alloy was used to synthesise ternary oxides of CuO and SnO{sub 2}. These materials were analysed across a range of compositions, and the electronic structure was modelled using density functional theory. In contrast to the gradual reduction in optical band gap, the films show a sharp reduction in both transparency and electrical resistivity with copper contents greater than 50%. Simulations indicate that this change is caused by a transition from a dominant Sn 5s to Cu 3d contribution to the upper valence band. A corresponding decrease in energetic disorder results in increased charge percolation pathways: a “compositional mobility edge.” Contributions from Cu(II) sub band-gap states are responsible for the reduction in optical transparency.

  20. An amorphous phase formation at palladium / silicon oxide (Pd/SiO{sub x}) interface through electron irradiation - electronic excitation process

    SciTech Connect

    Nagase, Takeshi; Yamashita, Ryo; Yabuuchi, Atsushi; Lee, Jung-Goo

    2015-11-15

    A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiO{sub x}) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.

  1. Oxidative stress induced by pure and iron-doped amorphous silica nanoparticles in subtoxic conditions.

    PubMed

    Napierska, Dorota; Rabolli, Virginie; Thomassen, Leen C J; Dinsdale, David; Princen, Catherine; Gonzalez, Laetitia; Poels, Katrien L C; Kirsch-Volders, Micheline; Lison, Dominique; Martens, Johan A; Hoet, Peter H

    2012-04-16

    Amorphous silica nanoparticles (SiO₂-NPs) have found broad applications in industry and are currently intensively studied for potential uses in medical and biomedical fields. Several studies have reported cytotoxic and inflammatory responses induced by SiO₂-NPs in different cell types. The present study was designed to examine the association of oxidative stress markers with SiO₂-NP induced cytotoxicity in human endothelial cells. We used pure monodisperse amorphous silica nanoparticles of two sizes (16 and 60 nm; S16 and S60) and a positive control, iron-doped nanosilica (16 nm; SFe), to study the generation of hydroxyl radicals (HO·) in cellular-free conditions and oxidative stress in cellular systems. We investigated whether SiO₂-NPs could influence intracellular reduced glutathione (GSH) and oxidized glutathione (GSSG) levels, increase lipid peroxidation (malondialdehyde (MDA) and 4-hydroxyalkenal (HAE) concentrations), and up-regulate heme oxygenase-1 (HO-1) mRNA expression in the studied cells. None of the particles, except SFe, produced ROS in cell-free systems. We found significant modifications for all parameters in cells treated with SFe nanoparticles. At cytotoxic doses of S16 (40-50 μg/mL), we detected weak alterations of intracellular glutathione (4 h) and a marked induction of HO-1 mRNA (6 h). Cytotoxic doses of S60 elicited similar responses. Preincubation of cells being exposed to SiO₂-NPs with an antioxidant (5 mM N-acetylcysteine, NAC) significantly reduced the cytotoxic activity of S16 and SFe (when exposed up to 25 and 50 μg/mL, respectively) but did not protect cells treated with S60. Preincubation with NAC significantly reduced HO-1 mRNA expression in cells treated with SFe but did not have any effect on HO-1 mRNA level in cell exposed to S16 and S60. Our study demonstrates that the chemical composition of the silica nanoparticles is a dominant factor in inducing oxidative stress.

  2. Analytical approximation of the InGaZnO thin-film transistors surface potential

    NASA Astrophysics Data System (ADS)

    Colalongo, Luigi

    2016-10-01

    Surface-potential-based mathematical models are among the most accurate and physically based compact models of thin-film transistors, and in turn of indium gallium zinc oxide TFTs, available today. However, the need of iterative computations of the surface potential limits their computational efficiency and diffusion in CAD applications. The existing closed-form approximations of the surface potential are based on regional approximations and empirical smoothing functions that could result not accurate enough in particular to model transconductances and transcapacitances. In this work we present an extremely accurate (in the range of nV) and computationally efficient non-iterative approximation of the surface potential that can serve as a basis for advanced surface-potential-based indium gallium zinc oxide TFTs models.

  3. Oxide composite prepared from intermetallic and amorphous Zr67Fe30M3- (M=Au, Pt) alloys and their catalytic activity for CO oxidation

    NASA Astrophysics Data System (ADS)

    Huang, Yung-Han; Wang, Sea-Fue; Kameoka, Satoshi; Miyamoto, Kanji; Tsai, An-Pang

    2017-01-01

    In this study, Zr67Fe30M3 (M=Au, Pt) intermetallic compounds and amorphous alloys were prepared and used as precursors for the synthesis of oxides. Oxidation treatment of the intermetallic compounds at 500 °C followed by X-ray diffraction (XRD) analysis indicated that zirconium and iron were oxidized to ZrO2 and Fe2O3, respectively. In the case of Zr67Fe30M3 amorphous alloys, cubic Zr6Fe3O was observed on the surface of the ribbons after heat treatment at 500 °C in vacuum. Addition of 3% of gold or platinum to the alloy resulted in an increase in the lattice constants of the Zr6Fe3O phase. Grounding the treated ribbons into powders followed by an oxidation treatment at 500 °C in air produced Fe2O3 and ZrO2 supports, where Au and Pt are dissolved in the oxides as confirmed by X-ray photoelectron spectroscopy (XPS). No matter precursors are intermetallics or amorphous phases, the resultant oxides are the same. Although Pt and Au dissolved in the oxides, catalytic activities for CO oxidation were significant improved.

  4. Amorphous cobalt potassium phosphate microclusters as efficient photoelectrochemical water oxidation catalyst

    NASA Astrophysics Data System (ADS)

    Zhang, Ye; Zhao, Chunsong; Dai, Xuezeng; Lin, Hong; Cui, Bai; Li, Jianbao

    2013-12-01

    A novel amorphous cobalt potassium phosphate hydrate compound (KCoPO4·H2O) is identified to be active photocatalyst for oxygen evolution reaction (OER) to facilitate hydrogen generation from water photolysis. It has been synthesized through a facile and cost-effective solution-based precipitation method using earth-abundant materials. Its highly porous structure and large surface areas are found to be responsible for the excellent electrochemical performance featuring a low OER onset at ˜550 mVSCE and high current density in alkaline condition. Unlike traditional cobalt-based spinel oxides (Co3O4, NiCo2O4) and phosphate (Co-Pi, Co(PO3)2) electrocatalysts, with proper energy band alignment for light-assisted water oxidation, cobalt potassium phosphate hydrate also exhibits robust visible-light response, generating a photocurrent density of ˜200 μA cm-2 at 0.7 VSCE. This catalyst could thus be considered as a promising candidate to perform photoelectrochemical water splitting.

  5. Surface structure of crystalline and amorphous chromia catalysts for the selective catalytic reduction of nitric oxide

    SciTech Connect

    Schraml-Marth, M.; Wokaun, A. ); Baiker, A. )

    1992-11-01

    Adsorption of NO onto the oxidized surfaces of both crystalline and amorphous chromia results in the formation of nitrato complexes, by the reaction of NO with surface oxygen. Up to six differently bound species exhibiting different thermal stabilities have been identified. As the catalyst surfaces are saturated with adsorbed oxygen, the bound NO molecules are not decomposed: Upon heating, NO is molecularly desorbed, and neither formation of N[sub 2]O nor of N[sub 2] is observed. Reduced chromia surfaces, which are partially depleted in surface oxygen, are more reactive towards NO. Decomposition of NO, to form N[sub 2]O and N[sub 2], is taking place already at room temperature and is accompanied by a partial reoxidation of the catalyst surface. Nitrato complexes are the most abundant surface species also on the reduced chromia: signals of adsorbed mono- and dinitrosyl complexes are comparatively weak. This observation shows that NO preferentially binds to the Lewis basic surface oxygen ions. As a consequence of the decreased surface oxygen concentration, the coverage of bridging surface nitrate species (requiring two adjacent surface oxygens) is smaller than on the oxidized catalysts. The reaction of NO with surface hydroxyl groups, producing N[sub 2] and NO[sub 2][sup [minus

  6. Wide gap microcrystalline silicon carbide emitter for amorphous silicon oxide passivated heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Pomaska, Manuel; Richter, Alexei; Lentz, Florian; Niermann, Tore; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

    2017-02-01

    Wide gap n-type microcrystalline silicon carbide [µc-SiC:H(n)] is highly suitable as window layer material for silicon heterojunction (SHJ) solar cells due to its high optical transparency combined with high electrical conductivity. However, the hot wire chemical vapor deposition (HWCVD) of highly crystalline µc-SiC:H(n) requires a high hydrogen radical density in the gas phase that gives rise to strong deterioration of the intrinsic amorphous silicon oxide [a-SiO x :H(i)] surface passivation. Introducing an n-type microcrystalline silicon oxide [µc-SiO x :H(n)] protection layer between the µc-SiC:H(n) and the a-SiO x :H(i) prevents the deterioration of the passivation by providing an etch resistance and by blocking the diffusion of hydrogen radicals. We fabricated solar cells with µc-SiC:H(n)/µc-SiO x :H(n)/a-SiO x :H(i) stack for the front side and varied the µc-SiO x :H(n) material properties by changing the microstructure of the µc-SiO x :H(n) to evaluate the potential of such stack implemented in SHJ solar cells and to identify the limiting parameters of the protection layer in the device. With this approach we achieved a maximum open circuit voltage of 677 mV and a maximum energy conversion efficiency of 18.9% for a planar solar cell.

  7. Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

    PubMed Central

    Hosono, Hideo; Toda, Yoshitake; Kamiya, Toshio; Watanabe, Satoru

    2017-01-01

    Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm2/(V · s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability. PMID:28028243

  8. Effect of ultraviolet light exposure to boron doped hydrogenated amorphous silicon oxide thin film

    NASA Astrophysics Data System (ADS)

    Baek, Seungsin; Iftiquar, S. M.; Jang, Juyeon; Lee, Sunhwa; Kim, Minbum; Jung, Junhee; Park, Hyeongsik; Park, Jinjoo; Kim, Youngkuk; Shin, Chonghoon; Lee, Youn-Jung; Yi, Junsin

    2012-11-01

    We have investigated the effect of ultraviolet (UV) light exposure to boron doped (p-type) hydrogenated amorphous silicon oxide (p-a-SiO:H) thin semiconductor films by measuring changes in its structural, electrical and optical properties. After a 50 h of UV light soaking (LS) of the films, that have 1.2, 6.9, 15.2, 25.3 at.% oxygen content (C(O)) and optical gap (E04) of 1.897, 2.080, 2.146 and 2.033 eV, show a relative increase in the C(O) by 28.0%, 9.8%, 2.0%, 3.1%, a relative increase in the Urbach energy (Eu) by 42%, 24%, 8%, 0%, decrease in the E04 by 66, 2, 12, 19 meV and the gap state defect density (Nd) show an increase by 6.5%, 3.4%, 0.7%, 0.1%. At higher oxygen content the observed UV light induced degradation (LID) is relatively less than that for films with lower oxygen content, indicating that higher oxides face less changes under the UV light.

  9. In situ Study of the Crystallization from Amorphous to Cubic Zirconium Oxide: Rietveld and Reverse Monte Carlo Analyses

    SciTech Connect

    Zhang,F.; Chupas, P.; Lui, S.; Hanson, J.; Caliebe, W.; Lee, P.; Chan, S.

    2007-01-01

    The amorphous-to-cubic (a-c) crystallization of nanoZrO{sub 2} in a reducing environment was studied by synchrotron X-ray diffraction. Rietveld analysis was performed to study the changes in crystallite size and lattice parameter as the cubic phase emerged. The pair distribution function (PDF) was obtained from the Fourier transformation of the normalized XRD patterns. A reverse Monte Carlo (RMC) simulation was applied to provide details of the local structure during the crystallization process as well as to calculate partial PDFs of Zr-Zr and Zr-O during the crystallization. The number of Zr's next-nearest neighbors of Zr remains 12, whereas the number of O's as nearest neighbors of Zr increases from 6.7 to 7.3 as the material evolves from an amorphous into a cubic structure, suggesting the persistence of a high concentration of oxygen vacancies. These simulated atomic structures show that the local structure of the amorphous phase bears resemblance to the short-range arrangement of cubic ZrO2, consistent with the results of X-ray absorption near edge spectroscopy (XANES) at Zr L{sub II} and L{sub III}. The amorphous-to-crystalline phase transformation is affected by the environment. Under an oxidizing condition, the amorphous phase crystallizes directly to tetragonal and subsequently to monoclinic zirconia.

  10. In situ study of the crystallization from amorphous to cubic zirconium oxide : rieetveld and reverse monte carlo analyses.

    SciTech Connect

    Zhang, F.; Chupas, P. J.; Lui, S. L. A.; Hanson, J. C.; Caliebe, W. A.; Lee, P. L.; Chan, S.-W.; X-Ray Science Division; Columbia Univ.; State Univ. of New York at Stony Brook; BNL

    2007-01-01

    The amorphous-to-cubic (a-c) crystallization of nanoZrO{sub 2} in a reducing environment was studied by synchrotron X-ray diffraction. Rietveld analysis was performed to study the changes in crystallite size and lattice parameter as the cubic phase emerged. The pair distribution function (PDF) was obtained from the Fourier transformation of the normalized XRD patterns. A reverse Monte Carlo (RMC) simulation was applied to provide details of the local structure during the crystallization process as well as to calculate partial PDFs of Zr-Zr and Zr-O during the crystallization. The number of Zr's next-nearest neighbors of Zr remains 12, whereas the number of O's as nearest neighbors of Zr increases from 6.7 to 7.3 as the material evolves from an amorphous into a cubic structure, suggesting the persistence of a high concentration of oxygen vacancies. These simulated atomic structures show that the local structure of the amorphous phase bears resemblance to the short-range arrangement of cubic ZrO{sub 2}, consistent with the results of X-ray absorption near edge spectroscopy (XANES) at Zr L{sub II} and L{sub III}. The amorphous-to-crystalline phase transformation is affected by the environment. Under an oxidizing condition, the amorphous phase crystallizes directly to tetragonal and subsequently to monoclinic zirconia.

  11. Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics.

    PubMed

    Zhu, Jian; Liu, Xiaolong; Geier, Michael L; McMorrow, Julian J; Jariwala, Deep; Beck, Megan E; Huang, Wei; Marks, Tobin J; Hersam, Mark C

    2016-01-06

    Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm(-2) and low leakage currents down to 6 × 10(-9) A cm(-2) that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

  12. Comparative electrochemical analysis of crystalline and amorphous anodized iron oxide nanotube layers as negative electrode for LIB.

    PubMed

    Pervez, Syed Atif; Kim, Doohun; Farooq, Umer; Yaqub, Adnan; Choi, Jung-Hee; Lee, You-Jin; Doh, Chil-Hoon

    2014-07-23

    This work is a comparative study of the electrochemical performance of crystalline and amorphous anodic iron oxide nanotube layers. These nanotube layers were grown directly on top of an iron current collector with a vertical orientation via a simple one-step synthesis. The crystalline structures were obtained by heat treating the as-prepared (amorphous) iron oxide nanotube layers in ambient air environment. A detailed morphological and compositional characterization of the resultant materials was performed via transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and Raman spectroscopy. The XRD patterns were further analyzed using Rietveld refinements to gain in-depth information on their quantitative phase and crystal structures after heat treatment. The results demonstrated that the crystalline iron oxide nanotube layers exhibit better electrochemical properties than the amorphous iron oxide nanotube layers when evaluated in terms of the areal capacity, rate capability, and cycling performance. Such an improved electrochemical response was attributed to the morphology and three-dimensional framework of the crystalline nanotube layers offering short, multidirectional transport lengths, which favor rapid Li(+) ions diffusivity and electron transport.

  13. The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

    NASA Astrophysics Data System (ADS)

    Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

    2016-12-01

    Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

  14. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    SciTech Connect

    Ou-Yang, Wei E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Nabatame, Toshihide

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  15. Hydrogen evolution from a copper(I) oxide photocathode coated with an amorphous molybdenum sulphide catalyst.

    PubMed

    Morales-Guio, Carlos G; Tilley, S David; Vrubel, Heron; Grätzel, Michael; Hu, Xile

    2014-01-01

    Concerns over climate change resulting from accumulation of anthropogenic carbon dioxide in the atmosphere and the uncertainty in the amount of recoverable fossil fuel reserves are driving forces for the development of renewable, carbon-neutral energy technologies. A promising clean solution is photoelectrochemical water splitting to produce hydrogen using abundant solar energy. Here we present a simple and scalable technique for the deposition of amorphous molybdenum sulphide films as hydrogen evolution catalyst onto protected copper(I) oxide films. The efficient extraction of excited electrons by the conformal catalyst film leads to photocurrents of up to -5.7 mA cm(-2) at 0 V versus the reversible hydrogen electrode (pH 1.0) under simulated AM 1.5 solar illumination. Furthermore, the photocathode exhibits enhanced stability under acidic environments, whereas photocathodes with platinum nanoparticles as catalyst deactivate more rapidly under identical conditions. The work demonstrates the potential of earth-abundant light-harvesting material and catalysts for solar hydrogen production.

  16. A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

    NASA Astrophysics Data System (ADS)

    Chen, Chi-Le; Chen, Wei-Feng; Zhou, Lei; Wu, Wei-Jing; Xu, Miao; Wang, Lei; Peng, Jun-Biao

    2016-03-01

    In the application of the Lambert W function, the surface potential for amorphous oxide semiconductor thin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states. While the surface potential under the above-threshold region is approximated by another asymptotic equation only considering the free carriers. The intersection point between these two asymptotic equations represents the transition from the weak accumulation to the strong accumulation. Therefore, the gate voltage corresponding to the intersection point is defined as threshold voltage of AOS TFTs. As a result, an analytical expression for the threshold voltage is derived from this novel definition. It is shown that the threshold voltage achieved by the proposed physics-based model is agreeable with that extracted by the conventional linear extrapolation method. Furthermore, we find that the free charge per unit area in the channel starts increasing sharply from the threshold voltage point, where the concentration of the free carriers is a little larger than that of the localized carriers. The proposed model for the threshold voltage of AOS TFTs is not only physically meaningful but also mathematically convenient, so it is expected to be useful for characterizing and modeling AOS TFTs.

  17. Hydrogen evolution from a copper(I) oxide photocathode coated with an amorphous molybdenum sulphide catalyst

    NASA Astrophysics Data System (ADS)

    Morales-Guio, Carlos G.; Tilley, S. David; Vrubel, Heron; Grätzel, Michael; Hu, Xile

    2014-01-01

    Concerns over climate change resulting from accumulation of anthropogenic carbon dioxide in the atmosphere and the uncertainty in the amount of recoverable fossil fuel reserves are driving forces for the development of renewable, carbon-neutral energy technologies. A promising clean solution is photoelectrochemical water splitting to produce hydrogen using abundant solar energy. Here we present a simple and scalable technique for the deposition of amorphous molybdenum sulphide films as hydrogen evolution catalyst onto protected copper(I) oxide films. The efficient extraction of excited electrons by the conformal catalyst film leads to photocurrents of up to -5.7mAcm-2 at 0V versus the reversible hydrogen electrode (pH 1.0) under simulated AM 1.5 solar illumination. Furthermore, the photocathode exhibits enhanced stability under acidic environments, whereas photocathodes with platinum nanoparticles as catalyst deactivate more rapidly under identical conditions. The work demonstrates the potential of earth-abundant light-harvesting material and catalysts for solar hydrogen production.

  18. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

    PubMed Central

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

    2015-01-01

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance. PMID:26080437

  19. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

    SciTech Connect

    Zhou, Nanjia; Kim, Myung -Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

    2015-06-15

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor– inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Lastly, continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

  20. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

    PubMed

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2015-06-30

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

  1. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

    DOE PAGES

    Zhou, Nanjia; Kim, Myung -Gil; Loser, Stephen; ...

    2015-06-15

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor– inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactivemore » materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Lastly, continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.« less

  2. The microstructures and electrical properties of Y-doped amorphous vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Gu, Deen; Zhou, Xin; Guo, Rui; Wang, Zhihui; Jiang, Yadong

    2017-03-01

    One of promising approaches for further improving the sensitivity of microbolometer arrays with greatly-reduced pixel size is using the thermal-sensitive materials with higher performance. In this paper, Y-doped vanadium oxide (VOx) thin films prepared by a reactively sputtering process exhibit enhanced performance for the microbolometer application compared with frequently-applied VOx thin films. Both undoped and Y-doped VOx thin films are amorphous due to the relatively low deposition temperature. Y-doped VOx thin films exhibit smoother surface morphology than VOx due to the restrained expansion of particles during depositions. Y-doping increases the temperature coefficient of resistivity by over 20% for the doping level of 1.30 at%. The change rate of resistivity, after aging for 72 h, of thin films was reduced from about 15% for undoped VOx to 2% due to the introduction of Y. Moreover, Y-doped VOx thin films have a low 1/f noise level as VOx ones. Y-doping provides an attractive approach for preparing VOx thermal-sensitive materials with enhanced performance for microbolometers.

  3. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    SciTech Connect

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  4. Insights into Silicate and Oxide Melt Structure from Amorphous, Non-Glass-Forming Materials

    NASA Astrophysics Data System (ADS)

    Stebbins, J. F.

    2015-12-01

    Many silicate and oxide liquids of interest in the Earth sciences and in technology cannot readily be quenched to glasses, either because of low silica contents (and hence low viscosity at the melting point and accompanying liquid 'fragility') or because of liquid-liquid unmixing at high temperature. Although in-situ, high temperature structural tools have been in use for decades and are rapidly developing, many methods are still most informative for glass samples quenched to ambient pressure and temperature, e.g. high-resolution solid-state NMR. Amorphous oxides, including alumina and silicate compositions, have widespread technological applications. These are generally deposited by a variety of high-energy sputtering methods, as films of thicknesses of 10's to 100's of nm. Using Al-27, Si-29, and O-17 NMR, we have recently shown that for such films, very similar short-range structure is seen in materials made by very different kinetic pathways, such as sol-gel synthesis vs. ion-beam sputtering. This path-independent structure suggests that these materials pass through transient equilibrium states during their formation, probably that of deeply supercooled liquids just above glass transition temperatures. In the HfO2-SiO2 and ZrO2-SiO2 systems, for example, samples have well-resolved O-17 NMR spectra, allowing quantitation of O sites with only Hf(Zr) neighbors (so-called "free" oxide ions), with mixed Hf(Zr) and Si neighbors, and Si only. The observed oxygen speciation agrees well with a simple thermodynamic model of one of the most fundamental equilibria in silicate systems, namely the reaction of bridging (Si-O-Si) and "free" (e.g. OHf3 and OHf4) oxide ions to produce "non-bridging" oxygens (e.g. Si-OHf2). This new approach to sampling such structural equilibria in compositions far outside the range of normal glass-forming liquids may provide new insights into more geological compositions as well, as well as in more general models of silicate melt chemistry.

  5. Determination of photocatalytic activity in amorphous and crystalline titanium oxide films prepared using plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-Yang; Chiang, Bo-Sheng; Chang, Springfield; Liu, Day-Shan

    2011-01-01

    Hydro-oxygenated amorphous titanium oxide (a-TiO x:OH) films were prepared by plasma-enhanced chemical vapor deposition (PECVD) using precursors of titanium tetraisopropoxide (TTIP) and oxygen. The influences of chemical states and crystal quality on the photocatalytic activity were systematically investigated in the as-deposited and post-annealed films. The degree of the photocatalytic activity was deeply correlated with the porosity related to the hydroxyl (OH) groups in the as-deposited amorphous film. The crystallized anatase structures was observed from the 200 °C-deposited a-TiO x:OH film after a post-annealing treatment at 400 °C. The photocatalytic activity related to the film with anatase structure was markedly superior to that of an amorphous film with porous structures. The larger the crystal size of the anatase structure, the higher the photocatalytic activity obtained. At elevated annealed temperatures, the inferior anatase structure due to the crystalline transformation led to a low photocatalytic activity. It was concluded that the photocatalytic activity of an amorphous TiO x film prepared using PECVD was determined by the porosity originating from the functional OH groups in the film, whereas the crystalline quality of anatase phase in the annealed poly-TiO x film was crucial to the photocatalytic activity.

  6. Oxygen partial pressure influence on the character of InGaZnO thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    Lu, Yi; Wang, Li

    2012-11-01

    The amorphous oxide semiconductors (AOSs) are promising for emerging large-area optoelectronic applications because of capability of large-area, uniform deposition at low temperatures such as room temperature (RT). Indium-gallium-zinc oxide (InGaZnO) thin film is a promising amorphous semiconductors material in thin film transistors (TFT) for its excellent electrical properties. In our work, the InGaZnO thin films are fabricated on the SiO2 glass using pulsed laser deposition (PLD) in the oxygen partial pressure altered from 1 to 10 Pa at RT. The targets were prepared by mixing Ga2O3, In2O3, and ZnO powder at a mol ratio of 1: 7: 2 before the solid-state reactions in a tube furnace at the atmospheric pressure. The targets were irradiated by an Nd:YAG laser(355nm). Finally, we have three films of 270nm, 230nm, 190nm thick for 1Pa, 5Pa, 10Pa oxygen partial pressure. The product thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall-effect investigation. The comparative study demonstrated the character changes of the structure and electronic transport properties, which is probably occurred as a fact of the different oxygen partial pressure used in the PLD.

  7. Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).

    PubMed

    Kim, Choong-Ki; Kim, Eungtaek; Lee, Myung Keun; Park, Jun-Young; Seol, Myeong-Lok; Bae, Hagyoul; Bang, Tewook; Jeon, Seung-Bae; Jun, Sungwoo; Park, Sang-Hee K; Choi, Kyung Cheol; Choi, Yang-Kyu

    2016-09-14

    An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In-Ga-Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (gm), 158% for the linear current (Ilinear), and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized.

  8. Metal-induced crystallization of amorphous Si thin films assisted by atomic layer deposition of nickel oxide layers.

    PubMed

    So, Byung-Soo; Bae, Seung-Muk; You, Yil-Hwan; Jo, DaiHui; Lee, Sun Sook; Chung, Taek-Mo; Kim, Chang Gyoun; An, Ki-Seok; Hwang, Jin-Ha

    2011-08-01

    Atomic layer deposition (ALD) of nickel oxide was applied to the nickel-induced crystallization of amorphous Si thin films. The nickel-induced crystallization was monitored as a function of annealing temperature and time using Raman spectroscopy. Since Raman spectroscopy allows for the numerical quantification of structural components, the incubation time and the crystallization rates were estimated as functions of the annealing temperature. The spatial locations of a nickel-based species, probably NiSi2, were investigated using X-ray photoelectron spectrometry. The formed NiSi2 seeds appeared to accelerate the crystallization kinetics in amorphous Si thin films deposited onto glass substrates. The ramifications of the atomic layer deposition are discussed with regard to large-panel displays, with special emphasis on the sophisticated control of the catalytic elements, especially nickel.

  9. Characterization of oxide layers on amorphous Mg-based alloys by Auger electron spectroscopy with sputter depth profiling.

    PubMed

    Baunack, S; Subba Rao, R V; Wolff, U

    2003-04-01

    Amorphous ribbons of Mg-Y-TM-[Ag] (TM: Cu, Ni), prepared by melt spinning, were subjected to electrochemical investigations. Oxide layers formed anodically under potentiostatic control in different electrolytes were investigated by AES and sputter depth profiling. Problems and specific features of characterization of the composition of oxide layers and amorphous ternary or quaternary Mg-based alloys have been investigated. In the alloys the Mg(KL(23)L(23)) peak exhibits a different shape compared to that in the pure element. Analysis of the peak of elastically scattered electrons proved the absence of plasmon loss features, characteristic of pure Mg, in the alloy. A different loss feature emerges in Mg(KL(23)L(23)) and Cu(L(23)VV). The system Mg-Y-TM-[Ag] suffers preferential sputtering. Depletion of Mg and enrichment of TM and Y are found. This is attributed mainly to the preferential sputtering of Mg. Thickness and composition of the formed oxide layer depend on the electrochemical treatment. After removing the oxide by sputtering the concentration of the underlying alloy was found to be affected by the treatment.

  10. Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/α-IGZO/ITO structure

    NASA Astrophysics Data System (ADS)

    Lo, Chun-Chieh; Hsieh, Tsung-Eong

    2016-09-01

    Fully transparent resistive random access memory (TRRAM) containing amorphous indium gallium zinc oxide as the resistance switching (RS) layer and transparent conducting oxides (indium zinc oxide and indium tin oxide) as the electrodes was prepared. Optical measurement indicated the transmittance of device exceeds 80% in visible-light wavelength range. TRRAM samples exhibited the forming-free feature and the best electrical performance (V SET  =  0.61 V V RESET  =  -0.76 V R HRS/R LRS (i.e. the R-ratio)  >103) was observed in the device subject to a post-annealing at 300 °C for 1 hr in atmospheric ambient. Such a sample also exhibited satisfactory endurance and retention properties at 85 °C as revealed by the reliability tests. Electrical measurement performed in vacuum ambient indicated that the RS mechanism correlates with the charge trapping/de-trapping process associated with oxygen defects in the RS layer.

  11. Widespread oxidized and hydrated amorphous silicates in CR chondrites matrices: Implications for alteration conditions and H2 degassing of asteroids

    NASA Astrophysics Data System (ADS)

    Le Guillou, Corentin; Changela, Hitesh G.; Brearley, Adrian J.

    2015-06-01

    The CR chondrites carry one of the most pristine records of the solar nebula materials that accreted to form planetesimals. They have experienced very variable degrees of aqueous alteration, ranging from incipient alteration in their matrices to the complete hydration of all of their components. In order to constrain their chemical alteration pathways and the conditions of alteration, we have investigated the mineralogy and Fe oxidation state of silicates in the matrices of 8 CR chondrites, from type 3 to type 1. Fe-L edge X-ray Absorption Near Edge Structure (XANES) was performed on matrix FIB sections using synchrotron-based scanning transmission X-ray microscopy (STXM). The Fe3+ / ∑ Fe ratio of submicron silicate particles was obtained and coordinated with TEM observations. In all the least altered CR chondrites (QUE 99177, EET 87770, EET 92042, LAP 02342, GRA 95229 and Renazzo), we find that the matrices consist of abundant submicron Fe-rich hydrated amorphous silicate grains, mixed with nanometer-sized phyllosilicates. The Fe3+ / ∑ Fe ratios of both amorphous and nanocrystalline regions are very high with values ranging from 68 to 78%. In the most altered samples (Al Rais and GRO 95577), fine-grained phyllosilicates also have a high Fe3+ / ∑ Fe ratio (around 70%), whereas the coarse, micrometer-sized phyllosilicates are less oxidized (down to 55%) and have a lower iron content. These observations suggest the following sequence: submicron Fe2+-amorphous silicate particles were the building blocks of CR matrices; after accretion they were quickly hydrated and oxidized, leading to a metastable, amorphous gel-like phase. Nucleation and growth of crystalline phyllosilicates was kinetically-limited in most type 3 and 2 CRs, but increased as alteration became more extensive in Al Rais and GRO 95577. The decreasing Fe3+ / ∑ Fe ratio is interpreted as a result of the transfer of Fe3+ from silicates to oxides during growth, while aqueous alteration progressed

  12. Modeling the adsorption of mercury(II) on (hydr)oxides. 2: {alpha}-FeOOH (goethite) and amorphous silica

    SciTech Connect

    Bonnissel-Gissinger, P.; Alnot, M.; Ehrhardt, J.J.; Lickes, J.P.; Behra, P.

    1999-07-15

    The surface complexation model is used to describe sorption experiments of inorganic mercury(II) in the presence of an amorphous silica, Aerosil 200, or an iron (hydr)oxide, the goethite {alpha}-FeOOH (Bayferrox 910). In the simulations, one assumes the formation of a monodentate surface complex {triple_bond}S{single_bond}OHgOH and {triple_bond}S{single_bond}OHgCl, when chlorides are present in solution. Participation of the complex {triple_bond}S{single_bond}OHgCl has been especially evidenced. Comparisons with other data from the literature have been made to investigate the influence of the nature of the oxide on the mechanism of mercury(II) adsorption. X-ray photoelectron spectroscopy was used to characterize the surface of the (hydr)oxides prior to adsorption and to observe when possible the mercury surface compounds.

  13. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

    SciTech Connect

    Kizu, Takio E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Miyanaga, Miki; Awata, Hideaki; Nabatame, Toshihide

    2015-09-28

    Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thin film transistors.

  14. Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

    NASA Astrophysics Data System (ADS)

    Niang, K. M.; Cho, J.; Heffernan, S.; Milne, W. I.; Flewitt, A. J.

    2016-08-01

    The influence of the stoichiometry of amorphous zinc tin oxide (a-ZTO) thin films used as the semiconducting channel in thin film transistors (TFTs) is investigated. A-ZTO has been deposited using remote-plasma reactive sputtering from zinc:tin metal alloy targets with 10%, 33%, and 50% Sn at. %. Optimisations of thin films are performed by varying the oxygen flow, which is used as the reactive gas. The structural, optical, and electrical properties are investigated for the optimised films, which, after a post-deposition annealing at 500 °C in air, are also incorporated as the channel layer in TFTs. The optical band gap of a-ZTO films slightly increases from 3.5 to 3.8 eV with increasing tin content, with an average transmission ˜90% in the visible range. The surface roughness and crystallographic properties of the films are very similar before and after annealing. An a-ZTO TFT produced from the 10% Sn target shows a threshold voltage of 8 V, a switching ratio of 108, a sub-threshold slope of 0.55 V dec-1, and a field effect mobility of 15 cm2 V-1 s-1, which is a sharp increase from 0.8 cm2 V-1 s-1 obtained in a reference ZnO TFT. For TFTs produced from the 33% Sn target, the mobility is further increased to 21 cm2 V-1 s-1, but the sub-threshold slope is slightly deteriorated to 0.65 V dec-1. For TFTs produced from the 50% Sn target, the devices can no longer be switched off (i.e., there is no channel depletion). The effect of tin content on the TFT electrical performance is explained in the light of preferential sputtering encountered in reactive sputtering, which resulted in films sputtered from 10% and 33% Sn to be stoichiometrically close to the common Zn2SnO4 and ZnSnO3 phases.

  15. Effects of amorphous silica coating on cerium oxide nanoparticles induced pulmonary responses

    PubMed Central

    Ma, Jane; Mercer, Robert R.; Barger, Mark; Schwegler-Berry, Diane; Cohen, Joel M.; Demokritou, Philip; Castranova, Vincent

    2015-01-01

    Recently cerium compounds have been used in a variety of consumer products, including diesel fuel additives, to increase fuel combustion efficiency and decrease diesel soot emissions. However, cerium oxide (CeO2) nanoparticles have been detected in the exhaust, which raises a health concern. Previous studies have shown that exposure of rats to nanoscale CeO2 by intratracheal instillation (IT) induces sustained pulmonary inflammation and fibrosis. In the present study, male Sprague–Dawley rats were exposed to CeO2 or CeO2 coated with a nano layer of amorphous SiO2 (aSiO2/CeO2) by a single IT and sacrificed at various times post-exposure to assess potential protective effects of the aSiO2 coating. The first acellular bronchoalveolar lavage (BAL) fluid and BAL cells were collected and analyzed from all exposed animals. At the low dose (0.15 mg/kg), CeO2 but not aSiO2/CeO2 exposure induced inflammation. However, at the higher doses, both particles induced a dose-related inflammation, cytotoxicity, inflammatory cytokines, matrix metalloproteinase (MMP)-9, and tissue inhibitor of MMP at 1 day post-exposure. Morphological analysis of lung showed an increased inflammation, surfactant and collagen fibers after CeO2 (high dose at 3.5 mg/kg) treatment at 28 days post-exposure. aSiO2 coating significantly reduced CeO2-induced inflammatory responses in the airspace and appeared to attenuate phospholipidosis and fibrosis. Energy dispersive X-ray spectroscopy analysis showed Ce and phosphorous (P) in all particle-exposed lungs, whereas Si was only detected in aSiO2/CeO2-exposed lungs up to 3 days after exposure, suggesting that aSiO2 dissolved off the CeO2 core, and some of the CeO2 was transformed to CePO4 with time. These results demonstrate that aSiO2 coating reduce CeO2-induced inflammation, phospholipidosis and fibrosis. PMID:26210349

  16. Effects of amorphous silica coating on cerium oxide nanoparticles induced pulmonary responses.

    PubMed

    Ma, Jane; Mercer, Robert R; Barger, Mark; Schwegler-Berry, Diane; Cohen, Joel M; Demokritou, Philip; Castranova, Vincent

    2015-10-01

    Recently cerium compounds have been used in a variety of consumer products, including diesel fuel additives, to increase fuel combustion efficiency and decrease diesel soot emissions. However, cerium oxide (CeO2) nanoparticles have been detected in the exhaust, which raises a health concern. Previous studies have shown that exposure of rats to nanoscale CeO2 by intratracheal instillation (IT) induces sustained pulmonary inflammation and fibrosis. In the present study, male Sprague-Dawley rats were exposed to CeO2 or CeO2 coated with a nano layer of amorphous SiO2 (aSiO2/CeO2) by a single IT and sacrificed at various times post-exposure to assess potential protective effects of the aSiO2 coating. The first acellular bronchoalveolar lavage (BAL) fluid and BAL cells were collected and analyzed from all exposed animals. At the low dose (0.15mg/kg), CeO2 but not aSiO2/CeO2 exposure induced inflammation. However, at the higher doses, both particles induced a dose-related inflammation, cytotoxicity, inflammatory cytokines, matrix metalloproteinase (MMP)-9, and tissue inhibitor of MMP at 1day post-exposure. Morphological analysis of lung showed an increased inflammation, surfactant and collagen fibers after CeO2 (high dose at 3.5mg/kg) treatment at 28days post-exposure. aSiO2 coating significantly reduced CeO2-induced inflammatory responses in the airspace and appeared to attenuate phospholipidosis and fibrosis. Energy dispersive X-ray spectroscopy analysis showed Ce and phosphorous (P) in all particle-exposed lungs, whereas Si was only detected in aSiO2/CeO2-exposed lungs up to 3days after exposure, suggesting that aSiO2 dissolved off the CeO2 core, and some of the CeO2 was transformed to CePO4 with time. These results demonstrate that aSiO2 coating reduce CeO2-induced inflammation, phospholipidosis and fibrosis.

  17. Mechanism and modelling of aluminium nanoparticle oxidation coupled with crystallisation of amorphous Al2O3 shell

    NASA Astrophysics Data System (ADS)

    Kong, Chengdong; Yu, Dan; Li, Shuiqing; Yao, Qiang

    2016-03-01

    The oxidation of aluminium nanoparticles coupled with crystallisation of amorphous alumina shell is investigated through the thermogravimetric analyser and differential scanning calorimetry (TGA-DSC) and the transmission electron microscope (TEM). The thermogravimetric (TG) curves show stepwise shapes with temperature increase and could be divided into four stages. The reaction at the second stage is complex, including the simultaneous crystallisation of amorphous alumina (am-Al2O3) and Al oxidation. The crystallisation of am-Al2O3 promotes the reaction through generating fast diffusion channels, like micro-cracks and grain boundaries in the oxide shell to accelerate the ionic diffusion. An enhancement factor (freact), which follows a power-law formula with the crystallisation rate, is introduced to quantify the impact of crystallisation on reaction. With heating rate increase, the second stage of TG curves shifts to the high temperature regime and the total weight gain at the second stage decreases slowly. A crystallisation-reaction model is constructed to fit and predict the weight gain after derivation of diffusivities and crystallisation kinetics. Modelling indicates that with heating rate rise, the mass increment at the second stage of TG curves decreases owing to the reduced reaction time, although the reaction is accelerated. The shift of TG curve to higher temperature is due to the polymorphic phase transition. Actually the derived kinetics of the crystallisation of amorphous alumina indicates that the polymorphic phase transformation mechanism works mainly below the heating rate of 3 K s-1. At higher heating rate, the melting of Al takes place firstly and the crystallisation of am-Al2O3 follows to enhance the ionic diffusion. Therefore, when the heating rate is fast during ignition or combustion, the Al nanoparticles undergo both the melting of Al and the polymorphic phase transition of am-Al2O3 to accelerate the reaction.

  18. Local environment of iron in heavy ion-irradiated amorphous magnetic oxides by Moessbauer and x-ray absorption spectroscopy

    SciTech Connect

    Studer, F.; Houpert Ch. ); Toulemonde, M. ) Dartyge E. )

    1991-04-01

    Moessbauer and X-ray absorption spectroscopies of some crystallized iron oxides, Fe{sub 2}O{sub 3}, FePO{sub 4}, Fe{sub 3}PO{sub 7}, and SrMn{sub 1.85}Fe{sub 0.15}O{sub 2.5}, the garnet Y{sub 3}Fe{sub 5}O{sub 12}, and the barium hexaferrite BaFe{sub 12}O{sub 19} have been undertaken in order to look at the local order around iron in Y{sub 3}Fe{sub 5}O{sub 12} and BaFe{sub 12}O{sub 19} materials amorphized by irradiation with high energy (27 MeV/n) xenon ions accelerated by GANIL. Simulations of the Moessbauer spectra suggested the presence of fivefold coordinated iron in the amorphous irradiated compounds with a distribution of magnetic interactions due to the variations of the number of iron second neighbors. The XANES spectra at the Fe-K edge confirmed the fivefold coordination of iron in the amorphous ferrites, show that the local structure around iron appears to be similar although the original structures were different, and appear close to the one observed in the Fe{sub 3}PO{sub 7} compound in which iron stands in a trigonal bipyramidal environment.

  19. Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In-Ga-Zn-Oxide Thin Film Transistor

    NASA Astrophysics Data System (ADS)

    Godo, Hiromichi; Kawae, Daisuke; Yoshitomi, Shuhei; Sasaki, Toshinari; Ito, Shunichi; Ohara, Hiroki; Kishida, Hideyuki; Takahashi, Masahiro; Miyanaga, Akiharu; Yamazaki, Shunpei

    2010-03-01

    We fabricated an inverted-staggered amorphous In-Ga-Zn-oxide (a-IGZO) thin film transistor (TFT) and measured the temperature dependence of its characteristics. A threshold voltage (Vth) shift between 120 and 180 °C was as large as 4 V. In an analysis with two-dimensional (2D) numerical simulation, we reproduced the measured result by assuming two types of donor-like states as carrier generation sources. Furthermore, by ab initio molecular dynamics (MD) simulation, we determined the electronic structures of three types of a-IGZO structures, namely, “stoichiometric a-IGZO”, “oxygen deficiency”, and “hydrogen doping”.

  20. Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

    NASA Astrophysics Data System (ADS)

    Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Kim, Wandong; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook

    2011-02-01

    Negative bias-induced instability of amorphous hafnium indium zinc oxide (α-HIZO) thin film transistors (TFTs) was investigated at various temperatures. In order to examine temperature-induced effects, fabricated TFTs with different combinations of gate insulator and gate metal were stressed by a negative gate bias at various temperatures. As a result, it is proved that negative bias-induced hole-trapping in the gate insulators and temperature-enhanced electron injection from the gate metals occurs at the same time at all temperatures, and the instability of HIZO TFT is more affected by the dominant factor out of the two mechanisms.

  1. Dispersion and interaction of graphene oxide in amorphous and semi-crystalline nano-composites: a PALS study

    NASA Astrophysics Data System (ADS)

    Maurer, Frans H. J.; Arza, Carlos R.

    2015-06-01

    The influence of dispersion and interaction of Graphene Oxide (GO) in semicrystalline Polyhydroxy butyrate (PHB) and glassy amorphous Poly(tBP-oda) is explored by Positron Annihilation Lifetime Spectroscopy (PALS). The ortho-Positronium lifetimes which represent the main free volume hole size of both polymers are mainly affected by the large differences in internal stresses built up by the shrinkage of the polymers during their preparation, restricted by the platelet structure of GO. The ortho-Positronium intensities, which represent the ortho-Positronium formation probabilities, suggest a strong dependency of on the dispersion of the nano-particles and their aspect ratio.

  2. Thermoelectric and electrical properties of micro-quantity Sn-doped amorphous indium-zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Byeon, Jayoung; Kim, Seohan; Lim, Jae-Hong; Song, Jae Yong; Park, Sun Hwa; Song, Pungkeun

    2017-01-01

    To realize high thermoelectric performance, it was tried to control both high electrical conductivity (σ) and low thermal conductivity (K) for the Sn-doped indium-zinc oxide films prepared by DC magnetron sputtering. The highest power factor was obtained post-annealed at 200 °C due to the highest σ. However, the highest figure of merit was obtained annealed at 500 °C. It could be attributed to both amorphous structure with low K by phonon and the highest Hall mobility. Thermoelectric and electrical properties of the film could be controlled by both heat treatment and Sn doping with high bond enthalpy.

  3. Use of Amorphous Oxides as High Temperature Dielectric Material in Wound Capacitors (PREPRINT)

    DTIC Science & Technology

    2008-02-01

    produce a capacitor. Capacitors fabricated using amorphous silicon dioxide as the dielectric have been shown to have stable capacitance...a higher dielectric constant in order to improve the energy density. These materials include hafnium dioxide and zirconium dioxide . Initial results...TERMS capacitor, dissipation factor, breakdown threshold, silicon dioxide , zirconium dioxide and dielectric 16. SECURITY CLASSIFICATION OF: 17

  4. Low-Temperature Synthesis of Hierarchical Amorphous Basic Nickel Carbonate Particles for Water Oxidation Catalysis.

    PubMed

    Yang, Yisu; Liang, Fengli; Li, Mengran; Rufford, Thomas E; Zhou, Wei; Zhu, Zhonghua

    2015-07-08

    Amorphous nickel carbonate particles are catalysts for the oxygen evolution reaction (OER), which plays a critical role in the electrochemical splitting of water. The amorphous nickel carbonate particles can be prepared at a temperature as low as 60 °C by an evaporation-induced precipitation (EIP) method. The products feature hierarchical pore structures. The mass-normalized activity of the catalysts, measured at an overpotential of 0.35 V, was 55.1 A g(-1) , with a Tafel slope of only 60 mV dec(-1) . This catalytic activity is superior to the performance of crystalline NiOx particles and β-Ni(OH)2 particles, and compares favorably to state-of-the-art RuO2 catalysts. The activity of the amorphous nickel carbonate is remarkably stable during a 10 000 s chronoamperometry test. Further optimization of synthesis parameters reveals that the amorphous structure can be tuned by adjusting the H2 O/Ni ratio in the precursor mixture. These results suggest the potential application of easily prepared hierarchical basic nickel carbonate particles as cheap and robust OER catalysts with high activity.

  5. Preparation and properties of amorphous titania-coated zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Liao, Min-Hung; Hsu, Chih-Hsiung; Chen, Dong-Hwang

    2006-07-01

    Amorphous TiO 2-coated ZnO nanoparticles were prepared by the solvothermal synthesis of ZnO nanoparticles in ethanol and the followed by sol-gel coating of TiO 2 nanolayer. The analyses of X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed that the resultant ZnO nanoparticles were hexagonal with a wurtzite structure and a mean diameter of about 60 nm. Also, after TiO 2 coating, the TEM images clearly indicated the darker ZnO nanoparticles being surrounded by the lighter amorphous TiO 2 layers. The zeta potential analysis revealed the pH dependence of zeta potentials for ZnO nanoparticles shifted completely to that for TiO 2 nanoparticles after TiO 2 coating, confirming the formation of core-shell structure and suggesting the coating of TiO 2 was achieved via the adhesion of the hydrolyzed species Ti-O - to the positively charged surface of ZnO nanoparticles. Furthermore, the analyses of Fourier transform infrared (FTIR) and Raman spectra were also conducted to confirm that amorphous TiO 2 were indeed coated on the surface of ZnO nanoparticles. In addition, the analyses of ultraviolet-visible (UV-VIS) and photoluminescence (PL) spectra revealed that the absorbance of amorphous TiO 2-coated ZnO nanoparticles at 375 nm gradually decreased with an increase in the Ti/Zn molar ratio and the time for TiO 2 coating, and the emission intensity of ZnO cores could be significantly enhanced by the amorphous TiO 2 shell.

  6. Controlled ambient and temperature treatment of InGaZnO thin film transistors for improved bias-illumination stress reliability

    SciTech Connect

    Vemuri, Rajitha N. P.; Hasin, Muhammad R.; Alford, T. L.

    2014-03-15

    The failure mechanisms arising from the instability in operation of indium gallium zinc oxide based thin film transistors (TFTs) upon prolonged real application stresses (bias and illumination) have been extensively studied and reported. Positive and negative gate bias conditions, along with high photonic energy wavelengths within visible light spectrum are used as stress conditions. The increased carrier concentration due to photonic excitation of defects within bandgap and ionization of deep level vacancies is compensated by the reduction in off currents under illumination due to the trapping of carriers in the intermetal dielectric. Band lowering at the source-channel junction due to accumulation of negative carriers repelled due to negative gate bias stress further causes high carrier flow into the channel and drives the devices into failure. The defect identification during failure and degradation assisted in proposing suitable low temperature post processing in specific ambients. Reliability tests after specific anneals in oxygen, vacuum, and forming gas ambients confirm the correlation of the defect type with anneal ambient. Annealed TFTs demonstrate high stabilities under illumination stresses and do not fail when subjected to combined stresses that cause failure in as-fabricated TFTs. Oxygen and forming gas anneals are impactful on the reliability and opens an area of study on donor and vacancy behavior in amorphous mixed oxide based TFTs. The subthreshold swing, field-effect mobilities, and off currents provide knowledge on best anneal practices by understanding role of hydrogen and oxygen in vacancy annihilation and transistor switching properties.

  7. High mobility and high stability glassy metal-oxynitride materials and devices

    PubMed Central

    Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun

    2016-01-01

    In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices. PMID:27044371

  8. High mobility and high stability glassy metal-oxynitride materials and devices

    NASA Astrophysics Data System (ADS)

    Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun

    2016-04-01

    In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.

  9. Role of Hydrophobicity in Adhesion of the Dissimilatory Fe(III)-Reducing Bacterium Shewanella alga to Amorphous Fe(III) Oxide

    PubMed Central

    Caccavo, F.; Schamberger, P. C.; Keiding, K.; Nielsen, P. H.

    1997-01-01

    The mechanisms by which the dissimilatory Fe(III)-reducing bacterium Shewanella alga adheres to amorphous Fe(III) oxide were examined through comparative analysis of S. alga BrY and an adhesion-deficient strain of this species, S. alga RAD20. Approximately 100% of S. alga BrY cells typically adhered to amorphous Fe(III) oxide, while less than 50% of S. alga RAD20 cells adhered. Bulk chemical analysis, isoelectric point analysis, and cell surface analysis by time-of-flight secondary-ion mass spectrometry and electron spectroscopy for chemical analysis demonstrated that the surfaces of S. alga BrY cells were predominantly protein but that the surfaces of S. alga RAD20 cells were predominantly exopolysaccharide. Physicochemical analyses and hydrophobic interaction assays demonstrated that S. alga BrY cells were more hydrophobic than S. alga RAD20 cells. This study represents the first quantitative analysis of the adhesion of a dissimilatory Fe(III)-reducing bacterium to amorphous Fe(III) oxide, and the results collectively suggest that hydrophobic interactions are a factor in controlling the adhesion of this bacterium to amorphous Fe(III) oxide. Despite having a reduced ability to adhere, S. alga RAD20 reduced Fe(III) oxide at a rate identical to that of S. alga BrY. This result contrasts with results of previous studies by demonstrating that irreversible cell adhesion is not requisite for microbial reduction of amorphous Fe(III) oxide. These results suggest that the interaction between dissimilatory Fe(III)-reducing bacteria and amorphous Fe(III) oxide is more complex than previously believed. PMID:16535706

  10. Photoresist-Free Fully Self-Patterned Transparent Amorphous Oxide Thin-Film Transistors Obtained by Sol-Gel Process

    NASA Astrophysics Data System (ADS)

    Lim, Hyun Soo; Rim, You Seung; Kim, Hyun Jae

    2014-04-01

    We demonstrated self-patterned solution-processed amorphous oxide semiconductor thin-film transistors (TFTs) using photosensitive sol-gels. The photosensitive sol-gels were synthesized by adding β-diketone compounds, i.e., benzoylacetone and acetylacetone, to sol-gels. The chemically modified photosensitive sol-gels showed a high optical absorption at specific wavelengths due to the formation of metal chelate bonds. Photoreactions of the modified solutions enabled a photoresist-free process. Moreover, Zn-Sn-O with a high Sn ratio, which is hard to wet-etch using conventional photolithography due to its chemical durability, was easily patterned via the self-patterning process. Finally, we fabricated a solution-processed oxide TFT that included fully self-patterned electrodes and an active layer.

  11. Characterization of transparent conductive oxide films and their effect on amorphous/crystalline silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Meng, Fanying; Shi, Jianhua; Shen, Leilei; Zhang, Liping; Liu, Jinning; Liu, Yucheng; Yu, Jian; Bao, Jian; Liu, Zhengxin

    2017-04-01

    Three different dopant indium oxide thin films were fabricated at low temperatures by reactive plasma deposition and sputtering. The optical and electrical characteristics of these films were analyzed as a function of the Hall electron concentration. Furthermore, these films were applied to amorphous/crystalline silicon heterojunction solar cells as transparent electrodes. Consequently, it was demonstrated that the high Hall mobility, high refractive index, and low extinction coefficient of transparent conductive oxide (TCO) films contribute to the high product of short-circuit current density and fill factor and conversion efficiency. Furthermore, it was found that the solar cell with a finger spacing of 1.9 mm on a 125 × 125 mm2 Si wafer is highly tolerant to TCO film resistivity when the electron concentration is less than 4.0 × 1020 cm‑3.

  12. Amorphous Indium-Zinc-Oxide Transparent Conductors for Thin Film PV: Preprint

    SciTech Connect

    Perkins, J.; Gennett, T.; Galante, M.; Gillaspie, D.; Ginley, D.

    2011-07-01

    Amorphous InZnO's (a-IZO) basic PV applicability has now been demonstrated in prototype CIGS, Si Heterojunction (SiHJ) and organic photovoltaics (OPV). However, to move beyond initial demonstration devices, improved TCO properties and processibility of the a-IZO films are needed. Here, RF-superimposed DC sputtering was used to improve the reliable deposition of a-IZO with conductivity > 3000 S/cm.

  13. Complex nanospherulites of zinc oxide and native amorphous boron in the lunar regolith from Mare Crisium

    NASA Astrophysics Data System (ADS)

    Mokhov, A. V.; Kartashov, P. M.; Gornostaeva, T. A.; Asadulin, En. E.; Bogatikov, O. A.

    2013-01-01

    During the study of tea-colored impact glass fragments from the sample of lunar regolith delivered to Earth by the Luna 24 automatic station by transmission electron microscopy, the composition variations of the previously described high-carbonaceous film, the presence of at least three composition types of glasses, and unusual nanospherulites with Zn-B-N-O composition were discovered. As a part of a nonuniform high-carbonaceous oxygen-bearing film, sites enriched in either Na, S, Si, or Ca were detected. All these sites, as well as the whole film, are electron-amorphous; however, crystalline graphite was also found. Two types of nanospherulites are composed of amorphous ZnO and regular interstratifications of crystalline ZnO and amorphous boron layers with insignificant participation of adsorbed nitrogen. It is supposed that the formation of zinc-boron nanospherulites was caused by a fast-flowing explosive process and probably was modulated by high-frequency acoustic oscillations in a cloud of evaporated high-temperature ionized gas during the impact event.

  14. Microstructure development and hydrogen gas interaction of oxidized Zr65Pd35 and Zr60Pd35Ce5 amorphous alloys

    NASA Astrophysics Data System (ADS)

    Ozawa, Masakuni; Kato, Shiro; Kobayashi, Katsutoshi; Yogo, Toshinobu; Yamamura, Shin-ichi

    2016-01-01

    The microstructure of composites derived from amorphous Zr65Pd35 and Zr65Pd35Ce5 alloys was studied. X-ray diffractograms, Raman spectroscopy profiles and scanning electron micrographs indicated that the mixtures containing ZrO2, metallic Pd, and PdO were formed for both amorphous alloys after heat treatment in air. The amorphous Zr60Pd35Ce5 alloy at temperatures of 280-400 °C changed to the composites in which very small Pd precipitates with a diameter less than 100 nm were embedded in a ZrO2 matrix. The hydrogen-temperature-programmed reduction was applied to study the reactivity of hydrogen gas with the oxidized Zr60Pd35Ce5 material. A rapid hydrogen absorption and release behavior was observed on the composite derived from the amorphous alloy.

  15. Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison

    DOE PAGES

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

    2015-08-12

    Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~105, a promising field effect mobility of 14.20 cm2V–1s–1, and a threshold voltage ofmore » 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm2V–1s–1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

  16. Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer

    NASA Astrophysics Data System (ADS)

    Li, Jun; Zhou, Fan; Lin, Hua-Ping; Zhu, Wen-Qing; Zhang, Jian-Hua; Jiang, Xue-Yin; Zhang, Zhi-Lin

    2012-04-01

    A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium-gallium-zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p-n junction with the InGaZnO film. After 60 s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5 A/W at a gate-source voltage (VGS) of 20 V, which is much larger than that (31.2 A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p-n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT.

  17. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

    PubMed Central

    2013-01-01

    In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric. PMID:23294730

  18. Wireless thin film transistor based on micro magnetic induction coupling antenna

    PubMed Central

    Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

    2015-01-01

    A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the ‘internet of things’ (IoT). PMID:26691929

  19. Wireless thin film transistor based on micro magnetic induction coupling antenna

    NASA Astrophysics Data System (ADS)

    Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

    2015-12-01

    A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the ‘internet of things’ (IoT).

  20. Wireless thin film transistor based on micro magnetic induction coupling antenna.

    PubMed

    Jun, Byoung Ok; Lee, Gwang Jun; Kang, Jong Gu; Kim, Seunguk; Choi, Ji-Woong; Cha, Seung Nam; Sohn, Jung Inn; Jang, Jae Eun

    2015-12-22

    A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. An amorphous indium gallium zinc oxide (α-IGZO) TFT with magnetic antenna structure was fabricated and studied for this purpose. To enhance the induction coupling efficiency while maintaining the same small antenna size, a magnetic core structure consisting of Ni and nanowires was formed under the antenna. With the micro-antenna connected to a source/drain or a gate of the TFT, working electrical signals were well controlled. The results demonstrated the device as an alternative solution to existing wire connections which cause a number of problems in various fields such as flexible/wearable devices, body implanted devices, micro/nano robots, and sensors for the 'internet of things' (IoT).

  1. High mobility bottom gate InGaZnO thin film transistors with SiO{sub x} etch stopper

    SciTech Connect

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-05-21

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiO{sub x} layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W/L=10 {mu}m/50 {mu}m) fabricated on glass exhibited a high field-effect mobility of 35.8 cm{sup 2}/V s, a subthreshold gate swing value of 0.59 V/decade, a thrseshold voltage of 5.9 V, and an I{sub on/off} ratio of 4.9x10{sup 6}, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

  2. Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison

    SciTech Connect

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

    2015-08-12

    Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~105, a promising field effect mobility of 14.20 cm2V–1s–1, and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm2V–1s–1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.

  3. Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment

    NASA Astrophysics Data System (ADS)

    Kim, Myeong-Ho; Choi, Myung-Jea; Kimura, Katsuya; Kobayashi, Hikaru; Choi, Duck-Kyun

    2016-12-01

    In recent years, many researchers have attempted to improve the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). In this study, the hydrogen cyanide (HCN) treatment was carried out to improve the positive bias stability of bottom-gate a-IGZO TFTs. The HCN treatment was performed using a 0.1 M HCN solution with a pH of 10 at room temperature. Before applying the positive bias stress, there were no differences in the major electrical properties, including the saturation mobility (μsat), threshold voltage (Vth), and subthreshold swing (S/S), between HCN-treated and non-HCN-treated devices. However, after applying the positive bias stress, the HCN-treated device showed superior bias stability compared to the non-HCN-treated device. This difference is associated with the passivation of the defect states and the surface of the back-channel layer of the HCN-treated device by cyanide ions.

  4. First-principles study of the mechanical and optical properties of amorphous hydrogenated silicon and silicon-rich silicon oxide

    NASA Astrophysics Data System (ADS)

    Bondi, Robert J.; Lee, Sangheon; Hwang, Gyeong S.

    2010-05-01

    We use first-principles density-functional theory (DFT) calculations to predict mechanical and optical property variation with composition for hydrogenated amorphous Si (a-Si:H) ( at.%H=0 , 5.9, 11.1, and 15.8) and a-SiOx ( x=0 , 0.5, 1.0, 1.5, and 2.0). A better understanding of the properties of a-Si:H and amorphous silicon oxide (a-SiOx) is technologically important, particularly for photovoltaic and optoelectronic device applications, respectively. However, relatively little reliable property information is available for these amorphous materials except for the well-studied end-point cases of a-Si and a-SiO2 . Our DFT calculations within the generalized gradient approximation predict that addition of H to a-Si monotonically reduces the elastic modulus (Y) by 18% and bulk modulus (B) by 16% as H incorporation increases to 15.8at.% in a-Si:H. Similarly, addition of O to a-Si monotonically reduces Y by 35% and B by 38% as x increases to 2.0 in a-SiOx . Our optical spectra for the complex dielectric function, ɛ(ω) , exhibit intensity reduction in the E2 transition peak of Im[ɛ(ω)] and reduction in the low-frequency dielectric constant {ɛo=limω→0Re[ɛ(ω)]} as either H or O are added to a-Si while the a-SiOx spectra additionally resolve a vivid blueshift of both the fundamental absorption edge and E2 transition energy as O content increases. Considering the large variation in reported experimental measurements and the limited availability of previous computational results, our property predictions provide valuable insight into the mechanical and optical behavior of a-Si:H and a-SiOx materials.

  5. Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In-Ga-Zn-Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Takeshi Osada,; Kengo Akimoto,; Takehisa Sato,; Masataka Ikeda,; Masashi Tsubuku,; Junichiro Sakata,; Jun Koyama,; Tadashi Serikawa,; Shunpei Yamazaki,

    2010-03-01

    We designed, prototyped, and evaluated a liquid crystal panel integrated with a gate driver and a source driver using amorphous In-Ga-Zn-oxide thin film transistors (TFTs). Using bottom-gate bottom-contact (BGBC) thin film transistors, superior characteristics could be obtained. We obtained TFT characteristics with little variation even when the thickness of the gate insulator (GI) film was reduced owing to etching of source/drain (S/D) wiring, which is a typical process for the BGBC TFT. Moreover, a favorable ON-state current was obtained even when an In-Ga-Zn-oxide layer was formed over the S/D electrode. Since the upper portion of the In-Ga-Zn-oxide layer is not etched, the BGBC structure is predicted to be effective in thinning the In-Ga-Zn-oxide layer in the future. Upon evaluation, we found that the prototyped liquid crystal panel integrated with the gate and source drivers using the TFTs with improved characteristics had stable drive.

  6. Magnesium-Aluminum-Zirconium Oxide Amorphous Ternary Composite: A Dense and Stable Optical Coating

    NASA Technical Reports Server (NTRS)

    Sahoo, N. K.; Shapiro, A. P.

    1998-01-01

    In the present work, the process parameter dependent optical and structural properties of MgO-Al(2)O(3)-ZrO(2) ternary mixed-composite material have been investigated. Optical properties were derived from spectrophotometric measurements. The surface morphology, grain size distributions, crystallographic phases and process dependent material composition of films have been investigated through the use of Atomic Force Microscopy (AFM), X-ray diffraction analysis and Energy Dispersive X- ray (EDX) analysis. EDX analysis made evident the correlation between the optical constants and the process dependent compositions in the films. It is possible to achieve environmentally stable amorphous films with high packing density under certain optimized process conditions.

  7. Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

    NASA Astrophysics Data System (ADS)

    Liu, Po-Tsun; Chang, Chih-Hsiang; Chang, Chih-Jui

    2016-06-01

    This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

  8. High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

    NASA Astrophysics Data System (ADS)

    Park, Jaechul; Kim, Sangwook; Kim, Changjung; Kim, Sunil; Song, Ihun; Yin, Huaxiang; Kim, Kyoung-Kok; Lee, Sunghoon; Hong, Kiha; Lee, Jaecheol; Jung, Jaekwan; Lee, Eunha; Kwon, Kee-Won; Park, Youngsoo

    2008-08-01

    Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si :H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO2 passivation layer. To prevent such damages, N2O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO2 deposition. N2O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37cm2/Vs, a threshold voltage of 0.1V, a subthreshold swing of 0.25V/decade, and an Ion/off ratio of 7.

  9. High-performance amorphous gallium indium zinc oxide thin-film transistors through N{sub 2}O plasma passivation

    SciTech Connect

    Park, Jaechul; Kim, Sangwook; Kim, Changjung; Kim, Sunil; Song, Ihun; Yin, Huaxiang; Kim, Kyoung-Kok; Lee, Sunghoon; Hong, Kiha; Park, Youngsoo; Lee, Jaecheol; Jung, Jaekwan; Lee, Eunha; Kwon, Kee-Won

    2008-08-04

    Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO{sub 2} passivation layer. To prevent such damages, N{sub 2}O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO{sub 2} deposition. N{sub 2}O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37 cm{sup 2}/V s, a threshold voltage of 0.1 V, a subthreshold swing of 0.25 V/decade, and an I{sub on/off} ratio of 7.

  10. Hexagonal Ag nanoarrays induced enhancement of blue light emission from amorphous oxidized silicon nitride via localized surface plasmon coupling.

    PubMed

    Ma, Zhongyuan; Ni, Xiaodong; Zhang, Wenping; Jiang, Xiaofan; Yang, Huafeng; Yu, Jie; Wang, Wen; Xu, Ling; Xu, Jun; Chen, Kunji; Feng, Duan

    2014-11-17

    A significant enhancement of blue light emission from amorphous oxidized silicon nitride (a-SiNx:O) films is achieved by introduction of ordered and size-controllable arrays of Ag nanoparticles between the silicon substrate and a-SiNx:O films. Using hexagonal arrays of Ag nanoparticles fabricated by nanosphere lithography, the localized surface plasmons (LSPs) resonance can effectively increase the internal quantum efficiency from 3.9% to 13.3%. Theoretical calculation confirms that the electromagnetic field-intensity enhancement is through the dipole surface plasma coupling with the excitons of a-SiNx:O films, which demonstrates a-SiNx:O films with enhanced blue emission are promising for silicon-based light-emitting applications by patterned Ag arrays.

  11. A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Moldovan, Oana; Castro-Carranza, Alejandra; Cerdeira, Antonio; Estrada, Magali; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Miljakovic, Slobodan; Iñiguez, Benjamin

    2016-12-01

    An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices.

  12. Highly conductive p-type amorphous oxides from low-temperature solution processing

    SciTech Connect

    Li Jinwang; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

    2012-09-24

    We report solution-processed, highly conductive (resistivity 1.3-3.8 m{Omega} cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 Degree-Sign C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E{sub VBM} = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

  13. Effects of calcium and phosphate on uranium(IV) oxidation: Comparison between nanoparticulate uraninite and amorphous UIV-phosphate

    NASA Astrophysics Data System (ADS)

    Latta, Drew E.; Kemner, Kenneth M.; Mishra, Bhoopesh; Boyanov, Maxim I.

    2016-02-01

    The mobility of uranium in subsurface environments depends strongly on its redox state, with UIV phases being significantly less soluble than UVI minerals. This study compares the oxidation kinetics and mechanisms of two potential products of UVI reduction in natural systems, a nanoparticulate UO2 phase and an amorphous UIV-Ca-PO4 analog to ningyoite (CaUIV(PO4)2·1-2H2O). The valence of U was tracked by X-ray absorption near-edge spectroscopy (XANES), showing similar oxidation rate constants for UIVO2 and UIV-phosphate in solutions equilibrated with atmospheric O2 and CO2 at pH 7.0 (kobs,UO2 = 0.17 ± 0.075 h-1 vs. kobs,UIVPO4 = 0.30 ± 0.25 h-1). Addition of up to 400 μM Ca and PO4 decreased the oxidation rate constant by an order of magnitude for both UO2 and UIV-phosphate. The intermediates and products of oxidation were tracked by electron microscopy, powder X-ray diffraction (pXRD), and extended X-ray absorption fine-structure spectroscopy (EXAFS). In the absence of Ca or PO4, the product of UO2 oxidation is Na-uranyl oxyhydroxide (under environmentally relevant concentrations of sodium, 15 mM NaClO4 and low carbonate concentration), resulting in low concentrations of dissolved UVI (<2.5 × 10-7 M). Oxidation of UIV-phosphate produced a Na-autunite phase (Na2(UO2)PO4·xH2O), resulting in similarly low dissolved U concentrations (<7.3 × 10-8 M). When Ca and PO4 are present in the solution, the EXAFS data and the solubility of the UVI phase resulting from oxidation of UO2 and UIV-phosphate are consistent with the precipitation of Na-autunite. Bicarbonate extractions and Ca K-edge X-ray absorption spectroscopy of oxidized solids indicate the formation of a Ca-UVI-PO4 layer on the UO2 surface and suggest a passivation layer mechanism for the decreased rate of UO2 oxidation in the presence of Ca and PO4. Interestingly, the extractions were unable to remove all of the oxidized U from partially oxidized UO2 solids, suggesting that oxidized U is distributed between

  14. Effects of calcium and phosphate on uranium(IV) oxidation: Comparison between nanoparticulate uraninite and amorphous UIV–phosphate

    DOE PAGES

    Latta, Drew E.; Kemner, Kenneth M.; Mishra, Bhoopesh; ...

    2015-11-17

    The mobility of uranium in subsurface environments depends strongly on its redox state, with UIV phases being significantly less soluble than UVI minerals. This study compares the oxidation kinetics and mechanisms of two potential products of UVI reduction in natural systems, a nanoparticulate UO2 phase and an amorphous UIV–Ca–PO4 analog to ningyoite (CaUIV(PO4)2·1–2H2O). The valence of U was tracked by X-ray absorption near-edge spectroscopy (XANES), showing similar oxidation rate constants for UIVO2 and UIV–phosphate in solutions equilibrated with atmospheric O2 and CO2 at pH 7.0 (kobs,UO2 = 0.17 ± 0.075 h-1 vs. kobs,UIVPO4 = 0.30 ± 0.25 h-1). Addition ofmore » up to 400 μM Ca and PO4 decreased the oxidation rate constant by an order of magnitude for both UO2 and UIV–phosphate. The intermediates and products of oxidation were tracked by electron microscopy, powder X-ray diffraction (pXRD), and extended X-ray absorption fine-structure spectroscopy (EXAFS). In the absence of Ca or PO4, the product of UO2 oxidation is Na–uranyl oxyhydroxide (under environmentally relevant concentrations of sodium, 15 mM NaClO4 and low carbonate concentration), resulting in low concentrations of dissolved UVI (<2.5 × 10-7 M). Oxidation of UIV–phosphate produced a Na-autunite phase (Na2(UO2)PO4·xH2O), resulting in similarly low dissolved U concentrations (<7.3 × 10-8 M). When Ca and PO4 are present in the solution, the EXAFS data and the solubility of the UVI phase resulting from oxidation of UO2 and UIV–phosphate are consistent with the precipitation of Na-autunite. Bicarbonate extractions and Ca K-edge X-ray absorption spectroscopy of oxidized solids indicate the formation of a Ca–UVI–PO4 layer on the UO2 surface and suggest a passivation layer mechanism for the decreased rate of UO2 oxidation in the presence of Ca and PO4. Interestingly, the extractions were unable to remove all of the oxidized U from partially oxidized UO2 solids, suggesting that

  15. Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

    NASA Astrophysics Data System (ADS)

    Ide, Keisuke; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Hosono, Hideo

    2012-04-01

    Amorphous In-Ga-Zn-O (a-IGZO) is expected as a backplane transistor material to drive next-generation flat-panel and flexible displays. It has been elucidated that thermal annealing even at low temperatures <200 °C reduces deep subgap defects and those at ≥300 °C further improve device characteristics, stability, and uniformity. These temperatures are much lower than the reported crystallization temperature (TX ˜ 600 °C). In this work, we investigate effects of thermal annealing on the structural and optical properties of a-IGZO thin films. We performed classical molecular dynamics simulation (CMD) and optical interference analyses including spectroscopic ellipsometry (SE). CMD reproduced the x-ray diffraction pattern of a-IGZO and exhibited a glass transition. Experimentally, it was found that TX depends largely on deposition methods and conditions, probably due to different chemical compositions. Sputter-deposited a-IGZO films exhibited onset TX ˜ 600 °C and crystalline volume fraction XC increased linearly from 600 °C. 1.2% of film densification occurred even at 600 °C due to crystallization. High-temperature in situ SE measurements did not detect a symptom of a glass transition temperature (Tg) presumably because the TX is close to Tg similar to the case of amorphous metals.

  16. Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cells.

    PubMed

    Barbé, Jérémy; Tietze, Max L; Neophytou, Marios; Murali, Banavoth; Alarousu, Erkki; Labban, Abdulrahman El; Abulikemu, Mutalifu; Yue, Wan; Mohammed, Omar F; McCulloch, Iain; Amassian, Aram; Del Gobbo, Silvano

    2017-04-05

    Chemical bath deposition (CBD) of tin oxide (SnO2) thin films as an electron-transport layer (ETL) in a planar-heterojunction n-i-p organohalide lead perovskite and organic bulk-heterojunction (BHJ) solar cells is reported. The amorphous SnO2 (a-SnO2) films are grown from a nontoxic aqueous bath of tin chloride at a very low temperature (55 °C) and do not require postannealing treatment to work very effectively as an ETL in a planar-heterojunction n-i-p organohalide lead perovskite or organic BHJ solar cells, in lieu of the commonly used ETL materials titanium oxide (TiO2) and zinc oxide (ZnO), respectively. Ultraviolet photoelectron spectroscopy measurements on the glass/indium-tin oxide (ITO)/SnO2/methylammonium lead iodide (MAPbI3)/2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene device stack indicate that extraction of photogenerated electrons is facilitated by a perfect alignment of the conduction bands at the SnO2/MAPbI3 interface, while the deep valence band of SnO2 ensures strong hole-blocking properties. Despite exhibiting very low electron mobility, the excellent interfacial energetics combined with high transparency (Egap,optical > 4 eV) and uniform substrate coverage make the a-SnO2 ETL prepared by CBD an excellent candidate for the potentially low-cost and large-scale fabrication of organohalide lead perovskite and organic photovoltaics.

  17. Oxyanion Induced Variations in Domain Structure for Amorphous Cobalt Oxide Oxygen Evolving Catalysts, Resolved by X-ray Pair Distribution Function Analysis

    SciTech Connect

    Kwon, Gihan; Kokhan, Oleksandr; Han, Ali; Chapman, Karena W.; Chupas, Peter J.; Du, Pingwu; Tiede, David M.

    2015-12-01

    Amorphous thin film oxygen evolving catalysts, OECs, of first-row transition metals show promise to serve as self-assembling photoanode materials in solar-driven, photoelectrochemical `artificial leaf' devices. This report demonstrates the ability to use high-energy X-ray scattering and atomic pair distribution function analysis, PDF, to resolve structure in amorphous metal oxide catalyst films. The analysis is applied here to resolve domain structure differences induced by oxyanion substitution during the electrochemical assembly of amorphous cobalt oxide catalyst films, Co-OEC. PDF patterns for Co-OEC films formed using phosphate, Pi, methylphosphate, MPi, and borate, Bi, electrolyte buffers show that the resulting domains vary in size following the sequence Pi < MPi < Bi. The increases in domain size for CoMPi and CoBi were found to be correlated with increases in the contributions from bilayer and trilayer stacked domains having structures intermediate between those of the LiCoOO and CoO(OH) mineral forms. The lattice structures and offset stacking of adjacent layers in the partially stacked CoMPi and CoBi domains were best matched to those in the LiCoOO layered structure. The results demonstrate the ability of PDF analysis to elucidate features of domain size, structure, defect content and mesoscale organization for amorphous metal oxide catalysts that are not readily accessed by other X-ray techniques. Finally, PDF structure analysis is shown to provide a way to characterize domain structures in different forms of amorphous oxide catalysts, and hence provide an opportunity to investigate correlations between domain structure and catalytic activity.

  18. Oxyanion Induced Variations in Domain Structure for Amorphous Cobalt Oxide Oxygen Evolving Catalysts, Resolved by X-ray Pair Distribution Function Analysis

    DOE PAGES

    Kwon, Gihan; Kokhan, Oleksandr; Han, Ali; ...

    2015-12-01

    Amorphous thin film oxygen evolving catalysts, OECs, of first-row transition metals show promise to serve as self-assembling photoanode materials in solar-driven, photoelectrochemical `artificial leaf' devices. This report demonstrates the ability to use high-energy X-ray scattering and atomic pair distribution function analysis, PDF, to resolve structure in amorphous metal oxide catalyst films. The analysis is applied here to resolve domain structure differences induced by oxyanion substitution during the electrochemical assembly of amorphous cobalt oxide catalyst films, Co-OEC. PDF patterns for Co-OEC films formed using phosphate, Pi, methylphosphate, MPi, and borate, Bi, electrolyte buffers show that the resulting domains vary in sizemore » following the sequence Pi < MPi < Bi. The increases in domain size for CoMPi and CoBi were found to be correlated with increases in the contributions from bilayer and trilayer stacked domains having structures intermediate between those of the LiCoOO and CoO(OH) mineral forms. The lattice structures and offset stacking of adjacent layers in the partially stacked CoMPi and CoBi domains were best matched to those in the LiCoOO layered structure. The results demonstrate the ability of PDF analysis to elucidate features of domain size, structure, defect content and mesoscale organization for amorphous metal oxide catalysts that are not readily accessed by other X-ray techniques. Finally, PDF structure analysis is shown to provide a way to characterize domain structures in different forms of amorphous oxide catalysts, and hence provide an opportunity to investigate correlations between domain structure and catalytic activity.« less

  19. Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

    PubMed

    Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

    2017-04-07

    Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO2 and V2O5, and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

  20. Phase separations of amorphous CoW films during oxidation and reactions with Si and Al

    SciTech Connect

    Wang, S.Q.; Mayer, J.W.

    1989-03-01

    Reactions of thin Co/sub 55/ W/sub 45/ films in contact with Si(100) substrates and aluminum overlayers annealed in vacuum in the temperature ranges of 625--700 /sup 0/C and 500--600 /sup 0/C, respectively, and of thin Co/sub 55/W/sub 45/ films in air from 500 to 600 /sup 0/C were investigated by Rutherford backscattering spectrometry, glancing angle x-ray diffraction, and scanning electron microscope techniques. CoW alloy films were amorphous and have a crystallization temperature of 850 /sup 0/C on SiO/sub 2/ substrates. The compound formed is Co/sub 7/ W/sub 6/. Phase separations were found in all the reactions. A layer of cobalt compounds (CoSi/sub 2/ in Si/CoW, Co/sub 2/ Al/sub 9/ in CoW/Al, and Co/sub 3/ O/sub 4/ in CoW with air) was found to form at the reaction interfaces. In addition, a layer of mainly tungsten compounds (WSi/sub 2/ in Si/CoW, WAl/sub 12/ in CoW/Al, and WO/sub 3/ in CoW with air) was found next to cobalt compound layers, but further away from the reaction interfaces. The reactions started at temperatures comparable to those required for the formation of corresponding tungsten compounds.

  1. Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films

    SciTech Connect

    Kumar, S. Sampath; Rubio, E. J.; Noor-A-Alam, M.; Martinez, G.; Manandhar, Sandeep; Shutthanandan, V.; Thevuthasan, Suntharampillai; Ramana, C.V.

    2013-02-15

    Ga2O3 thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 oC). The structural characteristics and optical properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-700 oC. The spectral transmission of the films increased with increasing temperature. The band gap of the films varied from 4.96 eV to 5.17 eV for a variation in Ts in the range 25-800 oC. A relationship between microstructure and optical property is discussed.

  2. Generalized molybdenum oxide surface chemical state XPS determination via informed amorphous sample model

    NASA Astrophysics Data System (ADS)

    Baltrusaitis, Jonas; Mendoza-Sanchez, Beatriz; Fernandez, Vincent; Veenstra, Rick; Dukstiene, Nijole; Roberts, Adam; Fairley, Neal

    2015-01-01

    Accurate elemental oxidation state determination for the outer surface of a complex material is of crucial importance in many science and engineering disciplines, including chemistry, fundamental and applied surface science, catalysis, semiconductors and many others. X-ray photoelectron spectroscopy (XPS) is the primary tool used for this purpose. The spectral data obtained, however, is often very complex and can be subject to incorrect interpretation. Unlike traditional XPS spectra fitting procedures using purely synthetic spectral components, here we develop and present an XPS data processing method based on vector analysis that allows creating XPS spectral components by incorporating key information, obtained experimentally. XPS spectral data, obtained from series of molybdenum oxide samples with varying oxidation states and degree of crystallinity, were processed using this method and the corresponding oxidation states present, as well as their relative distribution was elucidated. It was shown that monitoring the evolution of the chemistry and crystal structure of a molybdenum oxide sample due to an invasive X-ray probe could be used to infer solutions to complex spectral envelopes.

  3. Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition

    SciTech Connect

    Park, Suk Won; Jang, Dong Young; Kim, Jun Woo; Shim, Joon Hyung

    2015-07-15

    This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10{sup −5} S cm{sup −1} at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity.

  4. Light induced instability mechanism in amorphous InGaZn oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Robertson, John; Guo, Yuzheng

    2014-04-01

    A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation.

  5. Light induced instability mechanism in amorphous InGaZn oxide semiconductors

    SciTech Connect

    Robertson, John; Guo, Yuzheng

    2014-04-21

    A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation.

  6. Oxidation kinetics of hydrogenated amorphous carbon (a-CH(x)) overcoats for magnetic data storage media.

    PubMed

    Yun, Yang; Ma, Xiaoding; Gui, Jing; Broitman, Esteban; Gellman, Andrew J

    2007-05-08

    The oxidation kinetics of a-CHx overcoats during exposure to oxygen and water vapor have been measured using X-ray photoemission spectroscopy (XPS) in an apparatus that allows oxidation and analysis of freshly deposited a-CHx overcoats without prior exposure of the overcoats to air. The uptake of oxygen on the surfaces of the a-CHx overcoats has been measured at O2 and H2O pressures in the range 10(-7)-10(-3) Torr at room temperature. The uptake of oxygen during O2 exposures on the order of 10(7) Langmuirs leads to saturation of the a-CHx overcoat surfaces at oxidation levels on the order of 20%. This indicates that the surfaces of a-CHx overcoats are relatively inert to oxidation in the sense that the dissociative sticking coefficient of O2 is approximately 10(-6). Oxygen uptake during exposure to H2O vapor is similar to the uptake during exposure to O2 gas. Although the surfaces of the a-CHx overcoats are quite inhomogeneous, it has been possible to model the uptake of oxygen on their surfaces using a fairly simple Langmuir-Hinshelwood mechanism. Interestingly, the saturation coverage of oxygen during exposure to air at atmospheric pressure is approximately 6%, significantly lower than that obtained during low-pressure exposure to O2 gas or H2O vapor.

  7. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

    SciTech Connect

    Denny, Yus Rama; Firmansyah, Teguh; Oh, Suhk Kun; Kang, Hee Jae; Yang, Dong-Seok; Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol

    2016-10-15

    Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

  8. Reduction of channel resistance in amorphous oxide thin-film transistors with buried layer

    NASA Astrophysics Data System (ADS)

    Chong, Eugene; Kim, Bosul; Lee, Sang Yeol

    2012-04-01

    A silicon-indium-zinc-oxide (SIZO) thin film transistor (TFT) with low channel-resistance (RCH) indium-zinc-oxide (In2O3:ZnO = 9:1) buried layer annealed at low temperature of 200°C exhibited high field-effect mobility (μFE) over 55.8 cm2/V·s which is 5 times higher than that of the conventional TFTs due to small threshold voltage (Vth) change of 1.8 V under bias-temperature stress (BTS) condition for 420 minutes. The low-RCH buried-layer allows more strong current-path formed in channel layer well within relatively high-RCH channel-layer since it is less affected by the channel bulk and/or back interface trap with high carrier concentration.

  9. Packing and the structural transformations in liquid and amorphous oxides from ambient to extreme conditions

    PubMed Central

    Zeidler, Anita; Salmon, Philip Stephen; Skinner, Lawrie Basil

    2014-01-01

    Liquid and glassy oxide materials play a vital role in multiple scientific and technological disciplines, but little is known about the part played by oxygen–oxygen interactions in the structural transformations that change their physical properties. Here we show that the coordination number of network-forming structural motifs, which play a key role in defining the topological ordering, can be rationalized in terms of the oxygen-packing fraction over an extensive pressure and temperature range. The result is a structural map for predicting the likely regimes of topological change for a range of oxide materials. This information can be used to forecast when changes may occur to the transport properties and compressibility of, e.g., fluids in planetary interiors, and is a prerequisite for the preparation of new materials following the principles of rational design. PMID:24982151

  10. Characterization of Amorphous Oxide Nano-Thick Layers on 316L Stainless Steel by Electron Channeling Contrast Imaging and Electron Backscatter Diffraction.

    PubMed

    Dorri, Mahrokh; Turgeon, Stéphane; Brodusch, Nicolas; Cloutier, Maxime; Chevallier, Pascale; Gauvin, Raynald; Mantovani, Diego

    2016-10-01

    Characterization of the topmost surface of biomaterials is crucial to understanding their properties and interactions with the local environment. In this study, the oxide layer microstructure of plasma-modified 316L stainless steel (SS316L) samples was analyzed by a combination of electron backscatter diffraction and electron channeling contrast imaging using low-energy incident electrons. Both techniques allowed clear identification of a nano-thick amorphous oxide layer, on top of the polycrystalline substrate, for the plasma-modified samples. A methodology was developed using Monte Carlo simulations combined with the experimental results to estimate thickness of the amorphous layer for different surface conditions. X-ray photoelectron spectroscopy depth profiles were used to validate these estimations.

  11. Low-temperature synthetic route based on the amorphous nature of giant species for preparation of lower valence oxides

    SciTech Connect

    Eda, Kazuo . E-mail: eda@kobe-u.ac.jp; Kunotani, Fumiko; Uchiyama, Noriki

    2005-05-15

    We examined low-temperature synthetic route based on the amorphous nature of giant species to succeed to prepare Cs blue bronze (Cs{sub 0.3}MoO{sub 3}), which has never obtained by usual high-temperature methods, at ca. 680K. Solid solutions (K{sub 1-x}Rb{sub x}){sub 0.28}MoO{sub 3} and (Li{sub 1-x}Na{sub x}){sub 0.9}Mo{sub 6}O{sub 17} were also obtained at lower temperatures (ca. 670K). For the latter system consisting of non-isostructural end members, Li{sub 0.9}Mo{sub 6}O{sub 17}-structure type solid solution was formed even when 0.25oxides Ln{sub 2}Mo{sub 3}O{sub 9} (Ln=La, Gd) were obtained, but not as single phases.

  12. Characterization and simulation on antireflective coating of amorphous silicon oxide thin films with gradient refractive index

    NASA Astrophysics Data System (ADS)

    Huang, Lu; Jin, Qi; Qu, Xingling; Jin, Jing; Jiang, Chaochao; Yang, Weiguang; Wang, Linjun; Shi, Weimin

    2016-08-01

    The optical reflective properties of silicon oxide (SixOy) thin films with gradient refractive index are studied both theoretically and experimentally. The thin films are widely used in photovoltaic as antireflective coatings (ARCs). An effective finite difference time domain (FDTD) model is built to find the optimized reflection spectra corresponding to structure of SixOy ARCs with gradient refractive index. Based on the simulation analysis, it shows the variation of reflection spectra with gradient refractive index distribution. The gradient refractive index of SixOy ARCs can be obtained in adjustment of SiH4 to N2O ratio by plasma-enhanced chemical vapor deposition (PECVD) system. The optimized reflection spectra measured by UV-visible spectroscopy confirms to agree well with that simulated by FDTD method.

  13. Photo-induced oxidation and amorphization of trigonal tellurium: A means to engineer hybrid nanostructures and explore glass structure under spatial confinement

    SciTech Connect

    Vasileiadis, Thomas; Yannopoulos, Spyros N.

    2014-09-14

    Controlled photo-induced oxidation and amorphization of elemental trigonal tellurium are achieved by laser irradiation at optical wavelengths. These processes are monitored in situ by time-resolved Raman scattering and ex situ by electron microscopies. Ultrathin TeO₂ films form on Te surfaces, as a result of irradiation, with an interface layer of amorphous Te intervening between them. It is shown that irradiation, apart from enabling the controllable transformation of bulk Te to one-dimensional nanostructures, such as Te nanotubes and hybrid core-Te/sheath-TeO₂ nanowires, causes also a series of light-driven (athermal) phase transitions involving the crystallization of the amorphous TeO₂ layers and its transformation to a multiplicity of crystalline phases including the γ-, β-, and α-TeO₂ crystalline phases. The kinetics of the above photo-induced processes is investigated by Raman scattering at various laser fluences revealing exponential and non-exponential kinetics at low and high fluence, respectively. In addition, the formation of ultrathin (less than 10 nm) layers of amorphous TeO₂ offers the possibility to explore structural transitions in 2D glasses by observing changes in the short- and medium-range structural order induced by spatial confinement.

  14. Preparation and characterization of amorphous SiO2 coatings deposited by mirco-arc oxidation on sintered NdFeB permanent magnets

    NASA Astrophysics Data System (ADS)

    Xu, J. L.; Xiao, Q. F.; Mei, D. D.; Zhong, Z. C.; Tong, Y. X.; Zheng, Y. F.; Li, L.

    2017-03-01

    Amorphous SiO2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation (MAO) in silicate solution. The surface and cross-sectional morphologies, element and phase composition, corrosion resistance and magnetic properties of the coatings were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), potentiodynamic polarization test and physical properties measurements system (PPMS). The results showed that the surface morphologies of the coatings exhibited the "coral reef" like structure, different from the typical MAO porous structure. With increasing the voltages, the thickness of the coatings increased from 12.72 to 19.90 μm, the content of Si element increased, while the contents of Fe, Nd and P elements decreased. The coatings were mainly composed of amorphous SiO2 and a few amorphous Fe2O3 and Nd2O3. The amorphous SiO2 coatings presented excellent thermal shock resistance, while the thermal shock resistance decreased with increasing the voltages. The corrosion resistance of the coatings increased with increasing the voltages, and it could be enhanced by one order of magnitude compared to the uncoated NdFeB magnets. The MAO coatings slightly decreased the magnetic properties of the NdFeB samples in different degrees.

  15. Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

    NASA Astrophysics Data System (ADS)

    Lorenz, M.; Lajn, A.; Frenzel, H.; v. Wenckstern, H.; Grundmann, M.; Barquinha, P.; Martins, R.; Fortunato, E.

    2010-12-01

    We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 °C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm2/V s.

  16. Effects of ionic liquids on cation dynamics in amorphous polyethylene oxide electrolytes

    SciTech Connect

    Chattoraj, Joyjit Diddens, Diddo; Heuer, Andreas

    2014-01-14

    We perform extensive molecular dynamics simulations of a poly(ethylene oxide)-based polymer electrolyte material containing lithium bis(trifluoromethanesulfonyl)imide salt for a wide temperature regime above and below the experimental crystallization temperature with and without N-methyl-N-propylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquid (IL). The impact of the IL-concentration on the cation dynamics is studied. The increase of the cation mobility upon addition of IL is significant but temperature-independent. This can be related to distinct variations of the underlying transport properties as expressed within the previously introduced transport model of polymer electrolytes. Even for the largest IL concentration the transport model perfectly predicts the non-trivial time-dependence of the cationic mean square displacement for all temperatures. Finally, we compare our numerical and theoretical findings with the results of recent nuclear magnetic resonance experiments. In this way we can exclusively relate the strong experimentally observed dependence of the low-temperature Li-diffusivity on the IL concentration to the impact of IL on crystallization.

  17. Effects of ionic liquids on cation dynamics in amorphous polyethylene oxide electrolytes.

    PubMed

    Chattoraj, Joyjit; Diddens, Diddo; Heuer, Andreas

    2014-01-14

    We perform extensive molecular dynamics simulations of a poly(ethylene oxide)-based polymer electrolyte material containing lithium bis(trifluoromethanesulfonyl)imide salt for a wide temperature regime above and below the experimental crystallization temperature with and without N-methyl-N-propylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquid (IL). The impact of the IL-concentration on the cation dynamics is studied. The increase of the cation mobility upon addition of IL is significant but temperature-independent. This can be related to distinct variations of the underlying transport properties as expressed within the previously introduced transport model of polymer electrolytes. Even for the largest IL concentration the transport model perfectly predicts the non-trivial time-dependence of the cationic mean square displacement for all temperatures. Finally, we compare our numerical and theoretical findings with the results of recent nuclear magnetic resonance experiments. In this way we can exclusively relate the strong experimentally observed dependence of the low-temperature Li-diffusivity on the IL concentration to the impact of IL on crystallization.

  18. Effects of ionic liquids on cation dynamics in amorphous polyethylene oxide electrolytes

    NASA Astrophysics Data System (ADS)

    Chattoraj, Joyjit; Diddens, Diddo; Heuer, Andreas

    2014-01-01

    We perform extensive molecular dynamics simulations of a poly(ethylene oxide)-based polymer electrolyte material containing lithium bis(trifluoromethanesulfonyl)imide salt for a wide temperature regime above and below the experimental crystallization temperature with and without N-methyl-N-propylpyrrolidinium bis(trifluoromethanesulfonyl)imide ionic liquid (IL). The impact of the IL-concentration on the cation dynamics is studied. The increase of the cation mobility upon addition of IL is significant but temperature-independent. This can be related to distinct variations of the underlying transport properties as expressed within the previously introduced transport model of polymer electrolytes. Even for the largest IL concentration the transport model perfectly predicts the non-trivial time-dependence of the cationic mean square displacement for all temperatures. Finally, we compare our numerical and theoretical findings with the results of recent nuclear magnetic resonance experiments. In this way we can exclusively relate the strong experimentally observed dependence of the low-temperature Li-diffusivity on the IL concentration to the impact of IL on crystallization.

  19. Ce-Ti amorphous oxides for selective catalytic reduction of NO with NH3: confirmation of Ce-O-Ti active sites.

    PubMed

    Li, Ping; Xin, Ying; Li, Qian; Wang, Zhongpeng; Zhang, Zhaoliang; Zheng, Lirong

    2012-09-04

    The amorphous Ce-Ti mixed oxides were reported to be catalysts for selective catalytic reduction of NO(x) with NH(3), in which Ce and not Ti acts as their solvent in spite of the fact that Ce is low in content. The amorphous catalysts were characterized by X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) equipped with selective area electron diffraction (SAED). The Ce-Ti amorphous oxide shows higher activity than its crystalline counterpart at lower temperatures. Moreover, the presence of small CeO(2) crystallites as for the impregnated sample is deleterious to activity. The Ce-O-Ti short-range order species with the interaction between Ce and Ti in atomic scale was confirmed for the first time to be the active site using temperature programmed reduction with H(2) (H(2)-TPR), in situ FTIR spectra of NO adsorption, X-ray photoelectron spectroscopy (XPS), and X-ray absorption fine-structure (XAFS). Lastly, the Ce-O-Ti structure was directly observed by field-emission TEM (FETEM).

  20. Nitrogen plasma treatment of fluorine-doped tin oxide for enhancement of photo-carrier collection in amorphous Si solar cells

    NASA Astrophysics Data System (ADS)

    Baik, Seung Jae; Lim, Koeng Su

    2011-04-01

    Nitrogen plasma treatment was performed on fluorine-doped tin oxide (SnO2:F) front electrodes, and its impact on the performance of pin type amorphous Si (a-Si) solar cells was investigated. Nitrogen plasma treatment reverses the surface band bending of SnO2:F from accumulation to depletion, thus in turn reversing the band bending of the p type amorphous silicon carbide (p-a-SiC) window layer. The reversal of band bending leads to the collection of carriers generated in p-a-SiC, and quantum efficiency in the short wavelength regime is thereby enhanced. On the other hand, surface depletion of SnO2:F causes a reduction of the diode built-in voltage and increased series resistance, which could degrade the open circuit voltage (Voc) and fill factor (FF), the degradation of which is strongly affected by the deposition time of p-a-SiC.

  1. Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.

    PubMed

    Byun, Hye-Ran; You, Eun-Ah; Ha, Young-Geun

    2017-03-01

    For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers. The nanoscopic thickness-controllable hybrid dielectrics exhibit the superior capacitance (up to 970 nF/cm(2)), insulating property (leakage current densities <10(-7) A/cm(2)), and thermal stability (up to 300 °C) as well as smooth surfaces (root-mean-square roughness <0.35 nm). In addition, the surface energy of the hybrid multilayer dielectrics are easily changed by switching between mono- and bifunctional phosphonic acid-based self-assembled monolayers for compatible fabrication with both organic and amorphous oxide semiconductors. Consequently, the hybrid multilayer dielectrics integrated into TFTs reveal their excellent dielectric functions to achieve high-performance, ultralow-voltage operation (< ± 2 V) for both organic and amorphous oxide TFTs. Because of the easily tunable surface energy, the multifunctional hybrid multilayer dielectrics can also be adapted for various organic and inorganic semiconductors, and metal gates in other device configurations, thus allowing diverse advanced electronic applications including ultralow-power and large-area electronic devices.

  2. High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

    NASA Astrophysics Data System (ADS)

    Chasin, Adrian; Steudel, Soeren; Myny, Kris; Nag, Manoj; Ke, Tung-Huei; Schols, Sarah; Genoe, Jan; Gielen, Georges; Heremans, Paul

    2012-09-01

    High-performance Schottky diodes based on palladium blocking contacts were fabricated upon depositing indium-gallium-zinc oxide (IGZO) with high oxygen content. We find that an oxygen treatment of the palladium contact is needed to achieve low off currents in the Schottky diode, and rationalize this by relating an increased oxygen content at the Pd/IGZO interface to a lower interfacial trap density. Optimized IGZO films were obtained with a record high ratio of free charge carrier density to subgap traps. The rectification ratios of diodes with such films are higher than 107 with current densities exceeding 103 A/cm2 at low forward bias of 2 V.

  3. Electron tunnelling into amorphous germanium and silicon.

    NASA Technical Reports Server (NTRS)

    Smith, C. W.; Clark, A. H.

    1972-01-01

    Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

  4. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    SciTech Connect

    Mitoma, Nobuhiko E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Kizu, Takio; Lin, Meng-Fang; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Ou-Yang, Wei; Gao, Xu; Fujiwara, Akihiko

    2015-01-26

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

  5. Structure and dielectric properties of amorphous high-κ oxides: HfO2, ZrO2, and their alloys

    NASA Astrophysics Data System (ADS)

    Wang, Yin; Zahid, Ferdows; Wang, Jian; Guo, Hong

    2012-06-01

    High-κ metal oxides are a class of materials playing an increasingly important role in modern device physics and technology. Here we report theoretical investigations of the properties of structural and lattice dielectric constants of bulk amorphous metal oxides by a combined approach of classical molecular dynamics (MD), for structure evolution, and quantum mechanical first-principles density function theory (DFT), for electronic structure analysis. Using classical MD based on the Born-Mayer-Buckingham potential function within a melt and quench scheme, amorphous structures of high-κ metal oxides Hf1-xZrxO2 with different values of the concentration x are generated. The coordination numbers and the radial distribution functions of the structures are in good agreement with the corresponding experimental data. We then calculate the lattice dielectric constants of the materials from quantum mechanical first principles, and the values averaged over an ensemble of samples agree well with the available experimental data and are very close to the dielectric constants of their cubic form.

  6. Surface structure of crystalline and amorphous chromia catalysts for the selective catalytic reduction of nitric oxide. 1. Characterization by temperature-programmed reaction and desorption

    SciTech Connect

    Curry-Hyde, H.E.; Musch, H.; Baiker, A. ); Schraml-Marth, M.; Wokaun, A. )

    1992-02-01

    Amorphous and crystalline chromia catalysts used for the selective catalytic reduction (SCR) of NO by NH{sub 3} have been characterized using temperature-programmed reaction and desorption of preadsorbed NO and NH{sub 3}. The acidity of the Lewis acid sites and the associated labile oxygen species are investigated using NH{sub 3} as a probe molecule. The degree of coordinative unsaturation of these sites is inferred from the reactions of NO. The effects of reduction, oxidation, and SCR treatment on the state of the Lewis acid sites and the labile oxygen are discussed. Lewis acid sites on crystalline chromia are more acidic than those on amorphous chromia. Different labile oxygen species are discernible based on their oxidizing strengths and the products formed. All labile oxygen is readily removed by reduction; SCR treatment leads to the partial removal of labile oxygen from both morphologies of chromia. The degree of lability of the different oxygen species is related to the morphology of the chromia. The proportions of one- and twofold coordinatively unsaturated sites (1 and 2 c.u.s.) depends strongly on the morphology of the chromia and its pretreatment. Both types of sites show distinct differences in the acidity dependent on the morphology of the chromia. The most significant difference between the two morphologies is seen after SCR treatment. Crystalline chromia shows a very high density of 1 c.u.s. compared to amorphous chromia. These sites are generated from 2 c.u.s. by abstraction of oxygen from NO. Implications of these results on the SCR reaction are discussed.

  7. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    NASA Astrophysics Data System (ADS)

    Kizu, Takio; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto; Tsukagoshi, Kazuhito

    2016-07-01

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (VO) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense VO in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  8. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  9. TFT-Based Active Pixel Sensors for Large Area Thermal Neutron Detection

    NASA Astrophysics Data System (ADS)

    Kunnen, George

    Due to diminishing availability of 3He, which is the critical component of neutron detecting proportional counters, large area flexible arrays are being considered as a potential replacement for neutron detection. A large area flexible array, utilizing semiconductors for both charged particle detection and pixel readout, ensures a large detection surface area in a light weight rugged form. Such a neutron detector could be suitable for deployment at ports of entry. The specific approach used in this research, uses a neutron converter layer which captures incident thermal neutrons, and then emits ionizing charged particles. These ionizing particles cause electron-hole pair generation within a single pixel's integrated sensing diode. The resulting charge is then amplified via a low-noise amplifier. This document begins by discussing the current state of the art in neutron detection and the associated challenges. Then, for the purpose of resolving some of these issues, recent design and modeling efforts towards developing an improved neutron detection system are described. Also presented is a low-noise active pixel sensor (APS) design capable of being implemented in low temperature indium gallium zinc oxide (InGaZnO) or amorphous silicon (a-Si:H) thin film transistor process compatible with plastic substrates. The low gain and limited scalability of this design are improved upon by implementing a new multi-stage self-resetting APS. For each APS design, successful radiation measurements are also presented using PiN diodes for charged particle detection. Next, detection array readout methodologies are modeled and analyzed, and use of a matched filter readout circuit is described as well. Finally, this document discusses detection diode integration with the designed TFT-based APSs.

  10. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    SciTech Connect

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  11. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)

    SciTech Connect

    Liebhaber, M.; Mews, M.; Schulze, T. F.; Korte, L. Rech, B.; Lips, K.

    2015-01-19

    The heterojunction between amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ΔE{sub V} and the interface defect density, being technologically important junction parameters. ΔE{sub V} increases from ≈0.3 eV for the a-Si:H/c-Si interface to >4 eV for the a-SiO{sub 2}/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiO{sub x}:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔE{sub V}. Our method is readily applicable to other heterojunctions.

  12. Bias tuning charge-releasing leading to negative differential resistance in amorphous gallium oxide/Nb:SrTiO3 heterostructure

    NASA Astrophysics Data System (ADS)

    Wang, P. C.; Li, P. G.; Zhi, Y. S.; Guo, D. Y.; Pan, A. Q.; Zhan, J. M.; Liu, H.; Shen, J. Q.; Tang, W. H.

    2015-12-01

    Negative differential resistance (NDR) and bipolar resistive switching (RS) phenomena were observed in Au/Ga2O3-x/Nb:SrTiO3/Au heterostructures fabricated by growing amorphous gallium oxide thin films on 0.7%Nb-doped SrTiO3 substrates using pulsed laser deposition technique. The RS behavior is reproducible and stable without the forming process. The NDR phenomenon happened during the course of RS from low resistance state to high resistance state and was dependent much on the applied forward bias. The bias dependent charge releasing from oxygen vacancies was considered to contribute to the NDR behavior. The results show that there is a very close relationship between NDR and RS.

  13. Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition.

    PubMed

    Bitter, Sofie; Schlupp, Peter; Bonholzer, Michael; von Wenckstern, Holger; Grundmann, Marius

    2016-04-11

    Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete. Cation concentrations of 0.08-0.82 Zn/(Zn + Sn) were achieved across single 50 × 50 mm(2) glass substrates. The electrical conductivity increases for increasing tin content, and the absorption edge shifts to lower energies. The free carrier concentration can be tuned from 10(20) to 10(16) cm(-3) by variation of the cation ratio from 0.1 to 0.5 Zn/(Zn + Sn).

  14. Amorphic complexity

    NASA Astrophysics Data System (ADS)

    Fuhrmann, G.; Gröger, M.; Jäger, T.

    2016-02-01

    We introduce amorphic complexity as a new topological invariant that measures the complexity of dynamical systems in the regime of zero entropy. Its main purpose is to detect the very onset of disorder in the asymptotic behaviour. For instance, it gives positive value to Denjoy examples on the circle and Sturmian subshifts, while being zero for all isometries and Morse-Smale systems. After discussing basic properties and examples, we show that amorphic complexity and the underlying asymptotic separation numbers can be used to distinguish almost automorphic minimal systems from equicontinuous ones. For symbolic systems, amorphic complexity equals the box dimension of the associated Besicovitch space. In this context, we concentrate on regular Toeplitz flows and give a detailed description of the relation to the scaling behaviour of the densities of the p-skeletons. Finally, we take a look at strange non-chaotic attractors appearing in so-called pinched skew product systems. Continuous-time systems, more general group actions and the application to cut and project quasicrystals will be treated in subsequent work.

  15. Effects of calcium and phosphate on uranium(IV) oxidation: Comparison between nanoparticulate uraninite and amorphous UIV–phosphate

    SciTech Connect

    Latta, Drew E.; Kemner, Kenneth M.; Mishra, Bhoopesh; Boyanov, Maxim I.

    2015-11-17

    The mobility of uranium in subsurface environments depends strongly on its redox state, with UIV phases being significantly less soluble than UVI minerals. This study compares the oxidation kinetics and mechanisms of two potential products of UVI reduction in natural systems, a nanoparticulate UO2 phase and an amorphous UIV–Ca–PO4 analog to ningyoite (CaUIV(PO4)2·1–2H2O). The valence of U was tracked by X-ray absorption near-edge spectroscopy (XANES), showing similar oxidation rate constants for UIVO2 and UIV–phosphate in solutions equilibrated with atmospheric O2 and CO2 at pH 7.0 (kobs,UO2 = 0.17 ± 0.075 h-1 vs. kobs,UIVPO4 = 0.30 ± 0.25 h-1). Addition of up to 400 μM Ca and PO4 decreased the oxidation rate constant by an order of magnitude for both UO2 and UIV–phosphate. The intermediates and products of oxidation were tracked by electron microscopy, powder X-ray diffraction (pXRD), and extended X-ray absorption fine-structure spectroscopy (EXAFS). In the absence of Ca or PO4, the product of UO2 oxidation is Na–uranyl oxyhydroxide (under environmentally relevant concentrations of sodium, 15 mM NaClO4 and low carbonate concentration), resulting in low concentrations of dissolved UVI (<2.5 × 10-7 M). Oxidation of UIV–phosphate produced a Na-autunite phase (Na2(UO2)PO4·xH2O), resulting in similarly low dissolved U concentrations (<7.3 × 10-8 M). When Ca and PO4 are present in the solution, the EXAFS data and the solubility of the UVI phase resulting from oxidation of UO2 and UIV–phosphate are consistent with the precipitation of Na

  16. White light emission from heterojunction diodes based on surface-oxidized porous Si nanowire arrays and amorphous In-Ga-Zn-O capping

    NASA Astrophysics Data System (ADS)

    Moon, Kyeong-Ju; Lee, Tae Il; Lee, Woong; Myoung, Jae-Min

    2014-03-01

    A novel heterojunction white light emitting diode (LED) structure based on an array of vertically aligned surface-passivated p-type porous Si nanowires (PSiNWs) with n-type amorphous In-Ga-Zn-O (a-IGZO) capping is introduced. PSiNWs were initially synthesized by electroless etching of p-type Si (100) wafers assisted by Ag nanoparticle catalysts and then surface-passivated by thermal oxidation. The nanowires synthesized by metal-assisted electroless etching were found to have longitudinally varying nanoporous morphologies due to differences in the duration of exposure to etching environment. These PSiNWs were optically active with orange red photoluminescence consisting of dark red to yellow emissions attributable to quantum confinement effects and to modified band structures. The LED structures emitted visible white light while exhibiting rectifying current-voltage characteristics. The white light emission was found to be the result of the combination of dark red to yellow emissions originating from the quantum confinement effect within the PSiNWs and green to blue emissions due to the oxygen-deficiency-related recombination centers introduced during the surface oxidation.A novel heterojunction white light emitting diode (LED) structure based on an array of vertically aligned surface-passivated p-type porous Si nanowires (PSiNWs) with n-type amorphous In-Ga-Zn-O (a-IGZO) capping is introduced. PSiNWs were initially synthesized by electroless etching of p-type Si (100) wafers assisted by Ag nanoparticle catalysts and then surface-passivated by thermal oxidation. The nanowires synthesized by metal-assisted electroless etching were found to have longitudinally varying nanoporous morphologies due to differences in the duration of exposure to etching environment. These PSiNWs were optically active with orange red photoluminescence consisting of dark red to yellow emissions attributable to quantum confinement effects and to modified band structures. The LED structures

  17. An in-situ gas chromatography investigation into the suppression of oxygen gas evolution by coated amorphous cobalt-phosphate nanoparticles on oxide electrode

    PubMed Central

    Gim, Jihyeon; Song, Jinju; Kim, Sungjin; Jo, Jeonggeun; Kim, Seokhun; Yoon, Jaegu; Kim, Donghan; Hong, Suk-Gi; Park, Jin-Hwan; Mathew, Vinod; Han, Junhee; Song, Sun-Ju; Kim, Jaekook

    2016-01-01

    The real time detection of quantitative oxygen release from the cathode is performed by in-situ Gas Chromatography as a tool to not only determine the amount of oxygen release from a lithium-ion cell but also to address the safety concerns. This in-situ gas chromatography technique monitoring the gas evolution during electrochemical reaction presents opportunities to clearly understand the effect of surface modification and predict on the cathode stability. The oxide cathode, 0.5Li2MnO3∙0.5LiNi0.4Co0.2Mn0.4O2, surface modified by amorphous cobalt-phosphate nanoparticles (a-CoPO4) is prepared by a simple co-precipitation reaction followed by a mild heat treatment. The presence of a 40 nm thick a-CoPO4 coating layer wrapping the oxide powders is confirmed by electron microscopy. The electrochemical measurements reveal that the a-CoPO4 coated overlithiated layered oxide cathode shows better performances than the pristine counterpart. The enhanced performance of the surface modified oxide is attributed to the uniformly coated Co-P-O layer facilitating the suppression of O2 evolution and offering potential lithium host sites. Further, the formation of a stable SEI layer protecting electrolyte decomposition also contributes to enhanced stabilities with lesser voltage decay. The in-situ gas chromatography technique to study electrode safety offers opportunities to investigate the safety issues of a variety of nanostructured electrodes. PMID:27001370

  18. An in-situ gas chromatography investigation into the suppression of oxygen gas evolution by coated amorphous cobalt-phosphate nanoparticles on oxide electrode

    NASA Astrophysics Data System (ADS)

    Gim, Jihyeon; Song, Jinju; Kim, Sungjin; Jo, Jeonggeun; Kim, Seokhun; Yoon, Jaegu; Kim, Donghan; Hong, Suk-Gi; Park, Jin-Hwan; Mathew, Vinod; Han, Junhee; Song, Sun-Ju; Kim, Jaekook

    2016-03-01

    The real time detection of quantitative oxygen release from the cathode is performed by in-situ Gas Chromatography as a tool to not only determine the amount of oxygen release from a lithium-ion cell but also to address the safety concerns. This in-situ gas chromatography technique monitoring the gas evolution during electrochemical reaction presents opportunities to clearly understand the effect of surface modification and predict on the cathode stability. The oxide cathode, 0.5Li2MnO3•0.5LiNi0.4Co0.2Mn0.4O2, surface modified by amorphous cobalt-phosphate nanoparticles (a-CoPO4) is prepared by a simple co-precipitation reaction followed by a mild heat treatment. The presence of a 40 nm thick a-CoPO4 coating layer wrapping the oxide powders is confirmed by electron microscopy. The electrochemical measurements reveal that the a-CoPO4 coated overlithiated layered oxide cathode shows better performances than the pristine counterpart. The enhanced performance of the surface modified oxide is attributed to the uniformly coated Co-P-O layer facilitating the suppression of O2 evolution and offering potential lithium host sites. Further, the formation of a stable SEI layer protecting electrolyte decomposition also contributes to enhanced stabilities with lesser voltage decay. The in-situ gas chromatography technique to study electrode safety offers opportunities to investigate the safety issues of a variety of nanostructured electrodes.

  19. Enhancement on photocatalytic activity of an amorphous titanium oxide film with nano-textured surface by selective-fluorination etching process

    SciTech Connect

    Shih, Pin-Chun; Huang, Cheng-Hao; Chen, Tai-Hong; Lai, Li-Wen; Lu, Yi-Shan; Liu, Day-Shan

    2014-04-01

    Highlights: • The amorphous TiO{sub x} film surface was modified via selective fluorination etching process. • The resulting nano-textured surface markedly enriched the specific surface area and surface acidity. • The photocatalytic activity was comparable to an annealed TiO{sub x} film with anatase structure. - Abstract: A selective-fluorination etching process achieved by an UV light pre-irradiation and the subsequently fluorination etching was developed to enhance the photocatalytic activity of a low-temperature deposited amorphous titanium oxide (a-TiO{sub x}) film. Textured surface on the a-TiO{sub x} films formed by this process were investigated using atomic force microscope and field emission scanning electron microscope. Evidence of the fluorine ions introduced into the a-TiO{sub x} films was examined using Fourier transform infrared spectrometry and X-ray photoelectron spectroscopy. The etching thickness of the a-TiO{sub x} film was found to be deeply relevant to the film pre-irradiated by the UV light. An a-TiO{sub x} film with nano-textured surface, which was favorable to enlarge the specific surface area, thus was obtainable from the notable etching selectivity of the film pre-irradiated by UV light through a nano-sized mask. In addition, the surface acidity of the a-TiO{sub x} film was enhanced by the formation of the Ti-F chemical bonds originating from the fluorination etching process, which also was functional to facilitate the production of surface OH free radicals. Accordingly, the resulting fluorinated a-TiO{sub x} film with nano-textured surface performed a quality photocatalytic activity comparable to that of the high-temperature achieved TiO{sub x} film with anatase structures.

  20. Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

    NASA Astrophysics Data System (ADS)

    Alston, Robert; Iyer, Shanthi; Bradley, Tanina; Lewis, Jay; Cunningham, Garry; Forsythe, Eric

    2014-02-01

    Low temperature gallium tin zinc oxide (GSZO) based thin film transistors fabricated on silicon has been investigated as a potential indium free transparent amorphous oxide semiconductor thin film transistor (TAOS TFT) with potential device applications on plastic substrates. A comprehensive and detailed study on the performance of GSZO TFTs has been carried out by studying the effects of processing parameters such as deposition temperature and annealing temperature/duration, as well as the channel thickness with all temperatures held below 150 °C. Variety of characterization techniques, namely Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and x-ray reflectivity (XRR) in addition to I-V and C-V measurements were employed to determine the effects of the above parameters on the composition and quality of the channel. Optimized TFT characteristics of ID=3×10-7 A, ION/OFF =2×106, VON ~ -2 V, SS ~ 1 V/dec and μFE = 0.14 cm2/V· s with a ΔVON of 3.3 V under 3 hours electrical stress were produced.

  1. Influence of molybdenum source/drain electrode contact resistance in amorphous zinc–tin-oxide (a-ZTO) thin film transistors

    SciTech Connect

    Han, Dong-Suk; Kang, Yu-Jin; Park, Jae-Hyung; Jeon, Hyung-Tag; Park, Jong-Wan

    2014-10-15

    Highlights: • We developed and investigated source/drain electrodes in oxide TFTs. • The Mo S/D electrodes showed good output characteristics. • Intrinsic TFT parameters were calculated by the transmission line method. - Abstract: This paper investigates the feasibility of a low-resistivity electrode material (Mo) for source/drain (S/D) electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain electrodes and amorphous zinc–tin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Mo source/drain electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm{sup 2}/V s. In spite of slight current crowding effects, the Mo source/drain electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V{sub DS}) region.

  2. Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Hwang, Ji-Hyun; Kwak, Hyunmin; Kwon, Myeung Hoi

    2014-03-01

    Aluminum-induced crystallization (AIC) of amorphous silicon with an Al2O3 diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al2O3 layer was deposited between the a-Si and the Al films (a-Si/Al2O3/Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the Si and the Al layers. During the annealing process, small grain Si x Al seeds were formed at the channels. Then, the Al2O3 diffusion barrier was restructured to close the channels and prevent further diffusion of Al atoms into the a-Si layer. A polycrystalline Si film with (111), (220) and (311) crystallization peaks in the X-ray diffraction pattern was formed by annealing at 560 °C in a conventional furnace. That film showed a p-type semiconducting behavior with good crystallinity and a large grain size of up to 14.8 µm. No layer conversion occurred between the Si and the Al layers, which had been the fundamental obstacle to the applications in the crystallization of a-Si films by using the AIC method.

  3. Anchoring Fe ions to amorphous and crystalline oxides: a means to tune the degree of Fe coordination.

    PubMed

    Berlier, Gloria; Bonino, Francesca; Zecchina, Adriano; Bordiga, Silvia; Lamberti, Carlo

    2003-10-17

    We report on an IR spectroscopic study on the room-temperature adsorption of NO on different iron(II)-containing siliceous matrices. Fe2+ hosted inside the channels of MFI-type zeolites (Fe-ZSM-5 and Al-free Fe-silicalite) exhibits pronounced coordinative unsaturation, as witnessed by the capability to form, at 300 K, [Fe2-(NO)], [Fe2+(NO)2] and [Fe2+(NO)3] complexes with increasing NO equilibrium pressure. Fe2+ hosted on amorphous supports (high surface area SiO2 and MCM-41) sinks more deeply into the surface of the siliceous support and thus exhibits less pronounced coordinative unsaturation: only [Fe2+(NO)2] complexes were observed, even at the highest investigated NO equilibrium pressures. Activation at higher temperature (1073 K) of the Al-free Fe-silicalite sample resulted in the appearance of Fe2+ species similar to those observed on SiO2 and MCM-41, and this suggests that local (since not detectable by X-ray diffraction) amorphisation of the environment around Fe2+ anchoring sites occurs. The fact that this behaviour is not observed on the Fe-ZSM-5 sample activated at the same temperature suggests that framework Al species (and their negatively charged oxygen environment) have an important role in anchoring extraframework Fe2+ species. Such an anchoring phenomenon will prevent a random migration of iron species, with subsequent aggregation and loss of coordinative unsaturation. These observations can thus explain the higher catalytic activity of the Fe-ZSM-5 system in one-step benzene to phenol conversion when compared with the parent, Al-free, Fe-silicalite system with similar Fe content. The nature of the support and the activation temperature can therefore be used as effective means to tune the degree of Fe coordination.

  4. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

    SciTech Connect

    Gerlach, D.; Wilks, R. G.; Wimmer, M.; Felix, R.; Gorgoi, M.; Lips, K.; Rech, B.; Wippler, D.; Mueck, A.; Meier, M.; Huepkes, J.; Lozac'h, M.; Ueda, S.; Sumiya, M.; Yoshikawa, H.; Kobayashi, K.; Baer, M.

    2013-07-08

    The electronic structure of the interface between the boron-doped oxygenated amorphous silicon 'window layer' (a-SiO{sub x}:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon ({mu}c-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 {+-} 0.27) eV and (-3.37 {+-} 0.27) eV, respectively. A lower tunnel junction barrier height at the {mu}c-Si:H(B)/ZnO:Al interface compared to that at the a-SiO{sub x}:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a {mu}c-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

  5. Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

    NASA Astrophysics Data System (ADS)

    Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

    2016-05-01

    We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

  6. Atomic scale structure of amorphous aluminum oxyhydroxide, oxide and oxycarbide films probed by very high field (27)Al nuclear magnetic resonance.

    PubMed

    Baggetto, L; Sarou-Kanian, V; Florian, P; Gleizes, A N; Massiot, D; Vahlas, C

    2017-03-15

    The atomic scale structure of aluminum in amorphous alumina films processed by direct liquid injection chemical vapor deposition from aluminum tri-isopropoxide (ATI) and dimethyl isopropoxide (DMAI) is investigated by solid-state (27)Al nuclear magnetic resonance (SSNMR) using a very high magnetic field of 20.0 T. This study is performed as a function of the deposition temperature in the range 300-560 °C, 150-450 °C, and 500-700 °C, for the films processed from ATI, DMAI (+H2O), and DMAI (+O2), respectively. While the majority of the films are composed of stoichiometric aluminum oxide, other samples are partially or fully hydroxylated at low temperature, or contain carbidic carbon when processed from DMAI above 500 °C. The quantitative analysis of the SSNMR experiments reveals that the local structure of these films is built from AlO4, AlO5, AlO6 and Al(O,C)4 units with minor proportions of the 6-fold aluminum coordination and significant amounts of oxycarbides in the films processed from DMAI (+O2). The aluminum coordination distribution as well as the chemical shift distribution indicate that the films processed from DMAI present a higher degree of structural disorder compared to the films processed from ATI. Hydroxylation leads to an increase of the 6-fold coordination resulting from the trend of OH groups to integrate into AlO6 units. The evidence of an additional environment in films processed from DMAI (+O2) by (27)Al SSNMR and first-principle NMR calculations on Al4C3 and Al4O4C crystal structures supports that carbon is located in Al(O,C)4 units. The concentration of this coordination environment strongly increases with increasing process temperature from 600 to 700 °C favoring a highly disordered structure and preventing from crystallizing into γ-alumina. The obtained results are a valuable guide to the selection of process conditions for the CVD of amorphous alumina films with regard to targeted applications.

  7. Assessment of the genotoxic potential of two zinc oxide sources (amorphous and nanoparticles) using the in vitro micronucleus test and the in vivo wing somatic mutation and recombination test.

    PubMed

    Reis, Érica de Melo; de Rezende, Alexandre Azenha Alves; Santos, Diego Vilela; de Oliveria, Pollyanna Francielli; Nicolella, Heloisa Diniz; Tavares, Denise Crispim; Silva, Anielle Christine Almeida; Dantas, Noelio Oliveira; Spanó, Mário Antônio

    2015-10-01

    In this study, we evaluated the toxic and genotoxic potential of zinc oxide nanoparticles (ZnO NPs) of 20 nm and the mutagenic potential of these ZnO NPs as well as that of an amorphous ZnO. Toxicity was assessed by XTT colorimetric assay. ZnO NPs were toxic at concentrations equal to or higher than 240.0 μM. Genotoxicity was assessed by in vitro Cytokinesis Block Micronucleus Assay (CBMN) in V79 cells. ZnO NPs were genotoxic at 120.0 μM. The mutagenic potential of amorphous ZnO and the ZnO NPs was assayed using the wing Somatic Mutation and Recombination Test (SMART) of Drosophila melanogaster. In the Standard cross, the amorphous ZnO and ZnO NPs were not mutagenic. Nevertheless, Marker trans-heterozygous individuals from the High bioactivation cross treated with amorphous ZnO (6.25 mM) and ZnO NPs (12.50 mM) displayed a significant increased number of mutant spots when compared with the negative control. In conclusion, the results were not dose related and indicate that only higher concentrations of ZnO NPs were toxic and able to induce genotoxicity in V79 cells. The increase in mutant spots observed in D. melanogaster was generated due to mitotic recombination, rather than mutational events.

  8. Influence of oxidized interlayers on magnetic properties of multilayer films based on amorphous ferromagnet-dielectric nanocomposites

    NASA Astrophysics Data System (ADS)

    Al'Azzavi, H. S. M.; Granovskii, A. B.; Kalinin, Yu. E.; Makagonov, V. A.; Sitnikov, A. V.; Tarasova, O. S.

    2016-05-01

    Films of composites (Co45Fe45Zr10) x (Al2O3)100- x , (Co84Nb14Ta2) x (SiO2)100- x , (Co41Fe39B20) x (SiO2)100- x and multilayer heterogeneous composite-composite structures {[(Co45Fe45Zr10) x (Al2O3)100- x ]/[(Co45Fe45Zr10) x (Al2O3)100- x + N2]} n , {[(Co45Fe45Zr10) x (Al2O3)100- x ]/[(Co45Fe45Zr10) x (Al2O3)100- x + O2]} n , {[(Co41Fe39B20) x (SiO2)100- x ]/[(Co41Fe39B20) x (SiO2)100- x + O2]} n , and {[(Co84Nb14Ta2) x (SiO2)100- x ]/[(Co84Nb14Ta2) x (SiO2)100- x + O2]} n have been deposited using the ionbeam sputtering method with a cyclic supply of reaction gases during deposition. The structure and magnetic properties of the films have been studied. It has been shown that the introduction of an oxidized interlayer makes it possible to suppress the perpendicular magnetic anisotropy in the (Co45Fe45Zr10) x (Al2O3)100- x composite with the metallic phase concentration higher than the percolation threshold.

  9. Amorphous metal composites

    DOEpatents

    Byrne, Martin A.; Lupinski, John H.

    1984-01-01

    An improved amorphous metal composite and process of making the composite. The amorphous metal composite comprises amorphous metal (e.g. iron) and a low molecular weight thermosetting polymer binder. The process comprises placing an amorphous metal in particulate form and a thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite.

  10. Surface structure of crystalline and amorphous chromia catalysts for the selective catalytic reduction of nitric oxide. 3. Diffuse reflectance FTIR study of ammonia desorption from Broensted and Lewis acid sites

    SciTech Connect

    Schraml-Marth, M.; Wokaun, A. ); Curry-Hyde, H.E.; Baiker, A. )

    1992-02-01

    Two types of NH{sub 3} molecules bound to Broensted acidic sites on the surface of the chromia catalysts, as well as two species bound to Lewis sites, are identified from the IR spectra. The oxidized surface of {alpha}-Cr{sub 2}O{sub 3} is characterized by a high surface coverage of strongly Lewis-bound ammonia molecules, which desorb at temperatures above 400 K. In contrast, weakly bound NH{sub 3} prevails on the oxidized surface of amorphous chromia. The desorption of the latter species starts at 380 K and is completed around 480 K. A reductive pretreatment of the chromia surfaces by hydrogen (10% in Ar) decreases the number of surface hydroxyl groups and devoids the surface of adsorbed oxygen., As a consequence, the number of Broensted acidic sites is reduced both on the crystalline and the amorphous catalyst. On the reduced surface of {alpha}-Cr{sub 2}O{sub 3}, strongly bound ammonia coordinated to Lewis acidic sites is observed to persist to temperatures beyond 560 K. In contrast, weakly Lewis-bound NH{sub 3} prevails on reduced amorphous chromia, which is quantitatively desorbed at temperatures below 410 K. The formation of NH{sub 3} oxidation products on {alpha}-Cr{sub 2}O{sub 3} is manifested by the observation of two characteristic surface species, an N{sub 2}O{sub 2} dimer and an NO{sub 2} chelate surface complex. Corresponding signals are not observed on the surface of amorphous chromia.

  11. Surface structure of crystalline and amorphous chromia catalysts for the selective catalytic reduction of nitric oxide. 2. Diffuse reflectance FTIR study of thermal treatment and oxygen adsorption

    SciTech Connect

    Schraml-Marth, M.; Wokaun, A. ); Curry-Hyde, H.E.; Baiker, A. )

    1992-02-01

    The activation of crystalline and amorphous chromia surfaces by thermal pretreatment in argon and oxygen adsorption at 473 K has been studied by diffuse reflectance FTIR and Raman spectroscopy. The formation of coordinatively unsaturated chromium sites during thermal activation is monitored by observing the evolution of Cr{double bond}O stretching absorptions both in the fundamental and overtone regions of the FTIR spectrum. On {alpha}-Cr{sub 2}O{sub 3}, labile surface oxygen species are largely removed at 498 K, whereas on the amorphous chromia surface, labile oxygen is more tightly bound. As a consequence, coordinatively unsaturated chromium sites are generated on amorphous chromia to a lesser extent than on {alpha}-Cr{sub 2}O{sub 3}. Upon high-temperature oxygen treatment, O{sub 2} is dissociatively adsorbed. Coordinatively unsaturated sites are occupied by the added oxygen, as manifested by an increase in the number of Cr{double bond}O oscillators. Fine structure in the Cr{double bond}O absorptions of the amorphous chromia is observed for the first time, and is tentatively assigned to various types of surface sites. Raman spectroscopic characterization of the amorphous chromia surface reveals laser-induced dehydration and creation of coordinatively unsaturated surface Cr{double bond}O sites, accompanied by progressive crystallization of the amorphous substrate. Differences between crystalline and amorphous chromia with respect to their SCR activity are correlated with the higher density of labile oxygen species available on the surface of amorphous chromia under SCR reaction conditions (423-473 K).

  12. Widely bandgap tunable amorphous Cd–Ga–O oxide semiconductors exhibiting electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}

    SciTech Connect

    Yanagi, Hiroshi; Sato, Chiyuki; Kimura, Yota; Suzuki, Issei; Omata, Takahisa; Kamiya, Toshio; Hosono, Hideo

    2015-02-23

    Amorphous oxide semiconductors exhibit large electron mobilities; however, their bandgaps are either too large for solar cells or too small for deep ultraviolet applications depending on the materials system. Herein, we demonstrate that amorphous Cd–Ga–O semiconductors display bandgaps covering the entire 2.5–4.3 eV region while maintaining large electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}. The band alignment diagram obtained by ultraviolet photoemission spectroscopy and the bandgap values reveal that these semiconductors form type-II heterojunctions with p-type Cu{sub 2}O, which is suitable for solar cells and solar-blind ultraviolet sensors.

  13. Amorphous LiCoO2sbnd Li2SO4 active materials: Potential positive electrodes for bulk-type all-oxide solid-state lithium batteries with high energy density

    NASA Astrophysics Data System (ADS)

    Nagao, Kenji; Hayashi, Akitoshi; Deguchi, Minako; Tsukasaki, Hirofumi; Mori, Shigeo; Tatsumisago, Masahiro

    2017-04-01

    Newly amorphous Li2-x/100Cox/100S1-x/100O4-x/50 (xLiCoO2·(100-x)Li2SO4 (mol%)) positive electrode active materials are synthesized using mechanochemical techniques. SEM observation indicates that average radii of the Li1.2Co0.8S0.2O2.4 (80LiCoO2·20Li2SO4 (mol%)) particles are about 3 μm. HR-TEM images indicate that the particles comprise nano-crystalline and amorphous phases. The crystalline phase is attributable to cubic LiCoO2 phase. These active materials exhibit a high electronic conductivity of around 10-5-10-1 S cm-1 and an ionic conductivity of around 10-7-10-6 S cm-1 at room temperature. Bulk-type all-oxide solid-state cells (Lisbnd In alloy/Li3BO3-based glass-ceramic electrolyte/amorphous Li2-x/100Cox/100S1-x/100O4-x/50) are fabricated by pressing at room temperature without high temperature sintering. Although the cell with the milled LiCoO2 shows no capacity, the cell using the Li1.2Co0.8S0.2O2.4 electrode with no conductive components (ca. 150 μm thickness) operates as a secondary battery at 100 °C, with an average discharge potential of 3.3 V (vs. Li+/Li) and discharge capacity of 163 mAh g-1. A positive electrode with large amounts of active materials is suitable for achieving high energy density in all-solid-state batteries. These newly synthesized amorphous Li2-x/100Cox/100S1-x/100O4-x/50 electrodes with ionic and electronic conductivities and good processability meet that demand.

  14. Theory of amorphous ices

    PubMed Central

    Limmer, David T.; Chandler, David

    2014-01-01

    We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens. PMID:24858957

  15. Atomic-scale disproportionation in amorphous silicon monoxide

    PubMed Central

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-01-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material. PMID:27172815

  16. Atomic-scale disproportionation in amorphous silicon monoxide.

    PubMed

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-05-13

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material.

  17. A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx-Al2O3 thin film structure

    NASA Astrophysics Data System (ADS)

    Li, H. K.; Chen, T. P.; Liu, P.; Hu, S. G.; Liu, Y.; Zhang, Q.; Lee, P. S.

    2016-06-01

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)-aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

  18. Nanocrystal dispersed amorphous alloys

    NASA Technical Reports Server (NTRS)

    Perepezko, John H. (Inventor); Allen, Donald R. (Inventor); Foley, James C. (Inventor)

    2001-01-01

    Compositions and methods for obtaining nanocrystal dispersed amorphous alloys are described. A composition includes an amorphous matrix forming element (e.g., Al or Fe); at least one transition metal element; and at least one crystallizing agent that is insoluble in the resulting amorphous matrix. During devitrification, the crystallizing agent causes the formation of a high density nanocrystal dispersion. The compositions and methods provide advantages in that materials with superior properties are provided.

  19. Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter

    NASA Astrophysics Data System (ADS)

    Cheong, Heajeong; Kuribara, Kazunori; Ogura, Shintaro; Fukuda, Nobuko; Yoshida, Manabu; Ushijima, Hirobumi; Uemura, Sei

    2016-04-01

    We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5-di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 °C for 1 min. It showed a high field-effect mobility of 0.9 cm2·V-1·s-1 and a high on/off current ratio of 107. A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed.

  20. Light Response of Top Gate InGaZnO Thin Film Transistor

    NASA Astrophysics Data System (ADS)

    Park, Sang-Hee Ko; Ryu, Minki; Yoon, Sung Min; Yang, Shinhyuk; Hwang, Chi-Sun; Jeon, Jae-Hong; Kim, Kyounghwan

    2011-03-01

    The light stability of top gate indium gallium zinc oxide (IGZO) thin film transistor (TFT) has been investigated under gate bias and constant current stress to explore the possibility of active matrix display applications. While the halogen lamp irradiation onto the device under positive gate bias stress caused just -0.18 V of threshold voltage shift (ΔVth), it resulted in -15.1 V shift under negative gate bias stress. When the white light extracted from the halogen lamp of 100 µW/cm2 power illuminated the device under constant current stress, operation voltage shifted just -0.05 V for 21 h. The result shows good promise for the application of highly stable IGZO TFT to active matrix organic light emitting diodes (AMOLEDs).

  1. Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

    NASA Astrophysics Data System (ADS)

    Choi, Sung-Hwan; Han, Min-Koo

    2012-01-01

    We investigated the degradation of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) for various channel widths under high-gate and drain bias stress. The threshold voltage of IGZO TFT with wide-channel width (W > 100 μm) was significantly shifted. This included stress-induced hump-effect in a negative direction after the stress, whereas IGZO TFT with narrow-channel width (W < 100 μm) shifted in a positive direction. This phenomenon may be attributed to the hole trapping into the back-interface region. In order to enhance the reliability of IGZO TFTs, we developed and verified that the multiple-channel device showed better bias-temperature stability (ΔVTH: -0.1 V), whereas the single-channel device exhibited a -0.4 VΔVTH shift.

  2. Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al{sub 2}O{sub 3}/Zn-doped Al{sub 2}O{sub 3}/Al{sub 2}O{sub 3} stacks

    SciTech Connect

    Chen, Sun; Zhang, Wen-Peng; Cui, Xing-Mei; Ding, Shi-Jin Sun, Qing-Qing; Zhang, Wei

    2014-03-10

    We studied how electrical erasing of indium gallium zinc oxide-thin-film-transistor memory was improved by adding concurrent irradiation with monochromatic light (ML). At fixed gate bias, irradiating at wavelengths of ≤500 nm increased the erasing window (ΔV{sub th-e}) significantly: At a gate bias of −20 V and an erasing time of 5 min, ML irradiation at 400 nm increased ΔV{sub th-e} from 0.29 to 3.21 V. ΔV{sub th-e} increased incrementally with gate bias, erasing time, and ML power density, particularly at short ML wavelengths. Analyzing our experimental results, we discuss the underlying erasure mechanisms.

  3. Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

    NASA Astrophysics Data System (ADS)

    Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi; Yoshida, Manabu; Fukuda, Nobuko; Uemura, Sei

    2015-06-01

    We fabricated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 108 and a field-effect mobility of 0.3 cm2 V-1 s-1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

  4. A spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals

    NASA Astrophysics Data System (ADS)

    Haeberle, J.; Brizzi, S.; Gaspar, D.; Barquinha, P.; Galazka, Z.; Schulz, D.; Schmeißer, D.

    2016-10-01

    We use resonant photoelectron spectroscopy at the Zn 2p, Ga 2p, In 3d, and O 1s absorption edges to report on the electronic properties of indium-gallium-zinc-oxide thin films. We also compare the data with the respective data of the corresponding single crystals In2O3, Ga2O3, and ZnO. We focus on the elemental composition and, in particular, find no evidence for oxygen deficiency. The In, Ga, and Zn absorption data at resonance can be used to analyze the conduction band states in detail. We deduce that a configuration interaction between d10s0 and d9s1states is of importance. We provided a novel mechanism in which configuration interaction induced gap states create both, extended unoccupied states around E F as well as localized occupied states within the gap.

  5. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

    NASA Astrophysics Data System (ADS)

    Lee, Sungsik; Nathan, Arokia

    2016-10-01

    The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (<1 volt) and ultralow power (<1 nanowatt). By using a Schottky-barrier at the source and drain contacts, the current-voltage characteristics of the transistor were virtually channel-length independent with an infinite output resistance. It exhibited high intrinsic gain (>400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.

  6. Comparison of structural and electrical properties of Lu2O3 and Lu2TiO5 gate dielectrics for α-InGaZnO thin-film transistors

    NASA Astrophysics Data System (ADS)

    Pan, Tung-Ming; Chen, Ching-Hung; Her, Jim-Long; Koyama, Keiichi

    2014-11-01

    We compared the structural properties and electrical characteristics of high-κ Lu2O3 and Lu2TiO5 gate dielectrics for amorphous indium-gallium-zinc oxide (α-InGaZnO) thin-film transistor (TFT) applications. The Lu2O3 film has a strong Lu2O3 (400) peak in the X-ray diffraction pattern, while the Lu2TiO5 sample shows a relatively weak Lu2TiO5 (102) peak. Atomic force microscopy reveals that the Lu2O3 dielectric exhibits a rougher surface (about three times) than Lu2TiO5 one. In X-ray photoelectron spectroscopy analysis, we found that the intensity of the O 1s peak corresponding to Lu(OH)x for Lu2O3 film was higher than that of Lu2TiO5 film. Furthermore, compared with the Lu2O3 dielectric, the α-InGaZnO TFT using the Lu2TiO5 gate dielectric exhibited a lower threshold voltage (from 0.43 to 0.25 V), a higher Ion/Ioff current ratio (from 3.5 × 106 to 1.3 × 108), a smaller subthreshold swing (from 276 to 130 mV/decade), and a larger field-effect mobility (from 14.5 to 24.4 cm2/V s). These results are probably due to the incorporation of TiOx into the Lu2O3 film to form a Lu2TiO5 structure featuring a smooth surface, a low moisture absorption, a high dielectric constant, and a low interface state density at the oxide/channel interface. Furthermore, the stability of Lu2O3 and Lu2TiO5 α-InGaZnO TFTs was investigated under positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS). The threshold voltage of the TFT performed under NGBS is more degradation than that under PGBS. This behavior may be attributed to the electron charge trapping at the dielectric-channel interface under PGBS, whereas the oxygen vacancies occurred in the InGaZnO under NGBS.

  7. Trehalose amorphization and recrystallization.

    PubMed

    Sussich, Fabiana; Cesàro, Attilio

    2008-10-13

    The stability of the amorphous trehalose prepared by using several procedures is presented and discussed. Amorphization is shown to occur by melting (T(m)=215 degrees C) or milling (room temperature) the crystalline anhydrous form TRE-beta. Fast dehydration of the di-hydrate crystalline polymorph, TRE-h, also produces an amorphous phase. Other dehydration procedures of TRE-h, such as microwave treatment, supercritical extraction or gentle heating at low scan rates, give variable fractions of the polymorph TRE-alpha, that undergo amorphization upon melting (at lower temperature, T(m)=130 degrees C). Additional procedures for amorphization, such as freeze-drying, spray-drying or evaporation of trehalose solutions, are discussed. All these procedures are classified depending on the capability of the undercooled liquid phase to undergo cold crystallization upon heating the glassy state at temperatures above the glass transition temperature (T(g)=120 degrees C). The recrystallizable amorphous phase is invariably obtained by the melt of the polymorph TRE-alpha, while other procedures always give an amorphous phase that is unable to crystallize above T(g). The existence of two different categories is analyzed in terms of the transformation paths and the hypothesis that the systems may exhibit different molecular mobilities.

  8. Hydrogen in amorphous silicon

    SciTech Connect

    Peercy, P. S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH/sub 1/) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon.

  9. Amorphous diamond films

    DOEpatents

    Falabella, S.

    1998-06-09

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  10. Amorphous pharmaceutical solids.

    PubMed

    Vranić, Edina

    2004-07-01

    Amorphous forms are, by definition, non-crystalline materials which possess no long-range order. Their structure can be thought of as being similar to that of a frozen liquid with the thermal fluctuations present in a liquid frozen out, leaving only "static" structural disorder. The amorphous solids have always been an essential part of pharmaceutical research, but the current interest has been raised by two developments: a growing attention to pharmaceutical solids in general, especially polymorphs and solvates and a revived interest in the science of glasses and the glass transition. Amorphous substances may be formed both intentionally and unintentionally during normal pharmaceutical manufacturing operations. The properties of amorphous materials can be exploited to improve the performance of pharmaceutical dosage forms, but these properties can also give rise to unwanted effects that need to be understood and managed in order for the systems to perform as required.

  11. Testing of flexible InGaZnO-based thin-film transistors under mechanical strain

    NASA Astrophysics Data System (ADS)

    Münzenrieder, N. S.; Cherenack, K. H.; Tröster, G.

    2011-08-01

    Thin-film transistors (TFTs) fabricated on flexible plastic substrates are an integral part of future flexible large-area electronic devices like displays and smart textiles. Devices for such applications require stable electrical performance under electrical stress and also during applied mechanical stress induced by bending of the flexible substrate. Mechanical stress can be tensile or compressive strain depending on whether the TFT is located outside or inside of the bending plane. Especially the impact of compressive bending on TFT performance is hard to measure, because the device is covered with the substrate in this case. We present a method which allows us to continuously measure the electrical performance parameters of amorphous Indium-Gallium-Zinc Oxide (a-IGZO) based TFTs exposed to arbitrary compressive and tensile bending radii. To measure the influence of strain on a TFT it is attached and electrically connected to a flexible carrier foil, which afterwards is fastened to two plates in our bending tester. The bending radius can be adjusted by changing the distance between these plates. Thus it is possible to apply bending radii in the range between a totally flat substrate and ≈1 mm, corresponding to a strain of ≈3.5%. The tested bottom-gate TFTs are especially designed for use with our bending tester and fabricated on 50 μm thick flexible Kapton® E polyimide substrates. To show the different application areas of our bending method we characterized our TFTs while they are bent to different tensile and compressive bending radii. These measurements show that the field effect mobilities and threshold voltages of the tested a-IGZO TFTs are nearly, but not absolutely, stable under applied strain, compared to the initial values the mobilities shift by ≈3.5% in the tensile case and ≈-1.5% in the compressive one, at a bending radius of 8 mm. We also measured the influence of repeated bending (2500 cycles over ≈70 h), where a shift of the

  12. Pulmonary inflammation in rats after intratracheal instillation of quartz, amorphous SiO2, carbon black, and coal dust and the influence of poly-2-vinylpyridine-N-oxide (PVNO).

    PubMed

    Ernst, Heinrich; Rittinghausen, Susanne; Bartsch, Wilfried; Creutzenberg, Otto; Dasenbrock, Clemens; Görlitz, Bernd-Detlef; Hecht, Matthias; Kairies, Ulf; Muhle, Hartwig; Müller, Meike; Heinrich, Uwe; Pott, Friedrich

    2002-08-01

    Effects of poly-2-vinylpyridine-N-oxide (PVNO) were investigated in numerous in vivo and in vitro studies published in the nineteen sixties and seventies. These studies showed that PVNO inhibited development of fibrosis from quartz dust and improved lung clearance of quartz after inhalation exposure. Ameliorating effects of PVNO were observed also for pulmonary damage from colloidal SiO2 and organic substances, and the fibrogenic inflammation caused by carrageenan. Although it is not proven that silicosis is a precondition for quartz-induced lung tumours, we investigated the hypothesis that PVNO could reduce the lung tumour risk from quartz in rats. A carcinogenicity study was therefore started in rats with the main focus on the quantitative relationships among pulmonary inflammation, fibrosis and neoplasia caused by intratracheal instillation of 3 mg quartz DQ 12 with or without additional subcutaneous PVNO treatment. Other study groups were treated with multiple dust instillations, i.e. 30 instillations of 0.5 mg amorphous SiO2 at intervals of 2 weeks, 10 instillations of 0.5 mg of ultrafine carbon black or 1 mg coal at weekly intervals. The analyses of the bronchoalveolar lavage fluid (BALF) 9 months after start of the life-time study showed that the aim of producing similar levels of increased enzyme concentrations in the four groups treated with quartz/PVNO, amorphous SiO2, carbon black and coal was achieved. A 2.5- to 7.7-fold increase for lactate dehydrogenase (LDH), total protein, alkaline phosphatase and gamma-glutamyl transferase (gamma-GT) was found in these groups as compared to the control. In contrast, quartz treatment without PVNO increased the LDH level up to 24-fold and of total protein to 13-fold. However, the cell counts in the BALF were not so much different in all five groups, i.e. quartz without PVNO (leukocytes: 480.000, PMN: 190.000), quartz with PVNO (leukocytes: 300.000, PMN: 100.000), amorphous SiO2 (leukocytes: 570.000, PMN: 315

  13. Amorphous metal alloy

    DOEpatents

    Wang, R.; Merz, M.D.

    1980-04-09

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  14. Effect of dolomite, magnesium oxide (MgO) and chalk (CaCO3) on in vitro fermentation of amorphous and crystalline cellulose and meadow hay using inoculum from sheep.

    PubMed

    Váradyová, Zora; Baran, Miroslav; Zawadzki, Wojciech; Siroka, Peter

    2003-01-01

    Some minerals can influence some biochemical parameters of rumen fermentation. The objective of this experiment was to determine the effect of different amounts (0.1, 0.25 and 0.5 g) of dolomite and to compare the effect of dolomite, magnesium oxide (MgO) and chalk (CaCO3) upon the end products of rumen fermentation in vitro. Amorphous and crystalline cellulose as well as meadow hay were used as substrates and incubated with buffered rumen fluid in sealed fermentation bottles. In dependence on the amount of dolomite and the kind of substrate an inhibitory effect of dolomite on methane production was evident. Significant differences of methane production were found between the controls, crystalline cellulose and meadow hay with 0.5 g of dolomite. An increase of total gas production was observed for cellulose with both 0.25 and 0.5 g of dolomite and also for meadow hay with 0.5 g of dolomite. It can be concluded that there was a remarkable effect of dolomite on methane production and also a slight effect of magnesium oxide and chalk as compared to the effect of dolomite on the fermentation parameters of incubated substrates.

  15. Formation of amorphous materials

    DOEpatents

    Johnson, William L.; Schwarz, Ricardo B.

    1986-01-01

    Metastable amorphous or fine crystalline materials are formed by solid state reactions by diffusion of a metallic component into a solid compound or by diffusion of a gas into an intermetallic compound. The invention can be practiced on layers of metals deposited on an amorphous substrate or by intermixing powders with nucleating seed granules. All that is required is that the diffusion of the first component into the second component be much faster than the self-diffusion of the first component. The method is practiced at a temperature below the temperature at which the amorphous phase transforms into one or more crystalline phases and near or below the temperature at which the ratio of the rate of diffusion of the first component to the rate of self-diffusion is at least 10.sup.4. This anomalous diffusion criteria is found in many binary, tertiary and higher ordered systems of alloys and appears to be found in all alloy systems that form amorphous materials by rapid quenching. The method of the invention can totally convert much larger dimensional materials to amorphous materials in practical periods of several hours or less.

  16. Structural Amorphous Steels

    NASA Astrophysics Data System (ADS)

    Lu, Z. P.; Liu, C. T.; Thompson, J. R.; Porter, W. D.

    2004-06-01

    Recent advancement in bulk metallic glasses, whose properties are usually superior to their crystalline counterparts, has stimulated great interest in fabricating bulk amorphous steels. While a great deal of effort has been devoted to this field, the fabrication of structural amorphous steels with large cross sections has remained an alchemist’s dream because of the limited glass-forming ability (GFA) of these materials. Here we report the discovery of structural amorphous steels that can be cast into glasses with large cross-section sizes using conventional drop-casting methods. These new steels showed interesting physical, magnetic, and mechanical properties, along with high thermal stability. The underlying mechanisms for the superior GFA of these materials are discussed.

  17. Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Nomura, Kenji; Kamiya, Toshio; Ikenaga, Eiji; Yanagi, Hiroshi; Kobayashi, Keisuke; Hosono, Hideo

    2011-04-01

    In a previous work, we examined subgap states in highly doped amorphous In-Ga-Zn-O (a-IGZO) films by hard x-ray photoelectron spectroscopy (HX-PES) and found they had subgap electronic states above the valence band maximum (VBM) with the densities > 5 × 1020 cm-3 and just below the Fermi level with the densities > 5 × 1019 cm-3 [K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, Appl. Phys. Lett. 92, 202117 (2008)]; however, their electron densities (Ne > 3 × 1019 cm-3) are rather high and not compatible with rational properties required for active channel layers in thin-film transistors (TFTs). In this work, we report the effects of Ne and thermal annealing on the subgap states in order to provide the data useful for actual TFTs. It was found that the low-Ne a-IGZO films had extra subgap states above VBM similar to the previous report, but their densities were as small as ˜2.0 × 1020 cm-3 for the highly resistive, wet-annealed a-IGZO films. Angle-dependent HX-PES revealed that the subgap states above VBM concentrate in the surface region. The O 1s peak indicated that the wet annealing suppressed the generation of subgap states by terminating these states with -OH bonds. The subgap states below EF were observed commonly in all the samples including ZnO, crystalline (c-) IGZO and a-IGZO. It is concluded that these states below EF are neither related to the disordered structures of a-IGZO nor to their TFT characteristics. It is considered that these states are related to the metastable states created by the high-energy photons in vacuum.

  18. Amorphous silicon photovoltaic devices

    DOEpatents

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  19. 4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In-Ga-Zn-Oxide Thin-Film Transistors with Suppressed Variation

    NASA Astrophysics Data System (ADS)

    Hiroki Ohara,; Toshinari Sasaki,; Kousei Noda,; Shunichi Ito,; Miyuki Sasaki,; Yuta Endo,; Shuhei Yoshitomi,; Junichiro Sakata,; Tadashi Serikawa,; Shunpei Yamazaki,

    2010-03-01

    We have newly developed a 4.0-in. quarter video graphics array (QVGA) active-matrix organic light-emitting diode (AMOLED) display integrated with gate and source driver circuits using amorphous In-Ga-Zn-oxide (IGZO) thin-film transistors (TFTs). Focusing on a passivation layer in an inverted staggered bottom gate structure, the threshold voltage of the TFTs can be controlled to have “normally-off” characteristics with suppressed variation by using a SiOx layer formed by sputtering with a low hydrogen content. In addition, small subthreshold swing S/S of 0.19 V/decade, high field-effect mobility μFE of 11.5 cm2 V-1 s-1, and threshold voltage Vth of 1.27 V are achieved. The deposition conditions of the passivation layer and other processes are optimized, and variation in TFT characteristics is suppressed, whereby high-speed operation in gate and source driver circuits can be achieved. Using these driver circuits, the 4.0-in. QVGA AMOLED display integrated with driver circuits can be realized.

  20. 4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In-Ga-Zn-Oxide Thin-Film Transistors with Suppressed Variation

    NASA Astrophysics Data System (ADS)

    Ohara, Hiroki; Sasaki, Toshinari; Noda, Kousei; Ito, Shunichi; Sasaki, Miyuki; Endo, Yuta; Yoshitomi, Shuhei; Sakata, Junichiro; Serikawa, Tadashi; Yamazaki, Shunpei

    2010-03-01

    We have newly developed a 4.0-in. quarter video graphics array (QVGA) active-matrix organic light-emitting diode (AMOLED) display integrated with gate and source driver circuits using amorphous In-Ga-Zn-oxide (IGZO) thin-film transistors (TFTs). Focusing on a passivation layer in an inverted staggered bottom gate structure, the threshold voltage of the TFTs can be controlled to have “normally-off” characteristics with suppressed variation by using a SiOx layer formed by sputtering with a low hydrogen content. In addition, small subthreshold swing S/S of 0.19 V/decade, high field-effect mobility µFE of 11.5 cm2 V-1 s-1, and threshold voltage Vth of 1.27 V are achieved. The deposition conditions of the passivation layer and other processes are optimized, and variation in TFT characteristics is suppressed, whereby high-speed operation in gate and source driver circuits can be achieved. Using these driver circuits, the 4.0-in. QVGA AMOLED display integrated with driver circuits can be realized.

  1. Amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  2. Amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  3. Amorphous metallic foam

    NASA Astrophysics Data System (ADS)

    Schroers, Jan; Veazey, Chris; Johnson, William L.

    2003-01-01

    The bulk glass forming alloy Pd43Ni10Cu27P20 is processed into a low-density amorphous metallic foam. Pd43Ni10Cu27P20 is mixed with hydrated B2O3, which releases gas at elevated temperature and/or low pressure. Very homogeneous foams are achieved due to the high viscosity of the alloy even at its liquidus temperature. By processing at the liquidus temperature and decreasing the pressure to 10-2 mbar, well-distributed bubbles expand to foam the material. Foam densities as low as 1.4×103 kg/m3 were obtained, corresponding to a bubble volume fraction of 84%. The bubble diameter ranges between 2×10-4 and 1×10-3 m. Thermal analysis by differential scanning calorimetry confirms the amorphous nature of the foam. Furthermore, it reveals that the foam's thermal stability is comparable to the bulk material.

  4. Defects in Amorphous Metals.

    DTIC Science & Technology

    1982-07-01

    this map with a similar plot of the experimental data. An experimental deformation data map for Pd-based amorphous al- loys is shown in fig. 10. In the...Masumoto. I Mat. Sci. 12 (1977) 1927, [IgI T M Ha.es. J. W Allen. J. Tauc . B. C. Giessen and J. J. Hauser. Phys. Re. Lett. 41 i197s) 1282 [191 J

  5. Chemical elimination of amorphous carbon on amorphous carbon nanotubes and its electrochemical performance

    NASA Astrophysics Data System (ADS)

    He, Xiaojun; Jiang, Li; Fan, Chuangang; Lei, Jiangwei; Zheng, Mingdong

    2007-04-01

    Chemical elimination of amorphous carbon on amorphous carbon nanotubes (ACNTs) was for the first time investigated by different treatment processes. Electrochemical performance of the modified ACNTs/carbon paste electrode (ACNTs/CPE) was measured by cyclic voltammetry. Field emission scanning and transmission electron microscope (STEM) observation reveals that the diameter of ACNTs is in the range of 60-100 nm. The amorphous nature of ACNTs was proved by the result of Raman analysis. FT-IR spectra showed that it might be one of the low-cost ways to eliminate amorphous carbon on the surface of ACNTs to treat ACNTs with HNO 3 in microwave oven. Further oxidation in air would lead to the decrease of electron transfer rate on the ACNTs/CPE because OH groups on the wall of ACNTs were partly eliminated by oxidation in air. The results of cyclic voltammetry showed that ACNTs/CPE treated with HNO 3 in microwave oven has optimal peak in relation to the highest redox peak current.

  6. Thermoluminescence characteristics of hydrogenated amorphous zirconia

    NASA Astrophysics Data System (ADS)

    Montalvo, T. R.; Tenorio, L. O.; Nieto, J. A.; Salgado, M. B.; Estrada, A. M. S.; Furetta, C.

    2005-05-01

    This paper reports the experimental results concerning the thermoluminescent (TL) characteristics of hydrogenated amorphous zirconium oxide (a-Zr:H) powder prepared by the sol-gel method. The advantages of this method are the homogeneity and the purity of the gels associated with a relatively low sintering temperature. Hydrogenated amorphous powder was characterized by thermal analysis and X-ray diffraction. The main TL characteristics investigated were the TL response as a function of the absorbed dose, the reproducibility of the TL readings and the fading. The undoped a-Zr:H powder presents a TL glow curve with two peaks centered at 150 and 260 degrees C, respectively, after beta irradiation. The TL response a-Zr:H as a function of the absorbed dose showed a linear behavior over a wide range. The results presented open the possibility to use this material as a good TL dosimeter.

  7. The Stabilization of Amorphous Zopiclone in an Amorphous Solid Dispersion.

    PubMed

    Milne, Marnus; Liebenberg, Wilna; Aucamp, Marique

    2015-10-01

    Zopiclone is a poorly soluble psychotherapeutic agent. The aim of this study was to prepare and characterize an amorphous form of zopiclone as well as the characterization and performance of a stable amorphous solid dispersion. The amorphous form was prepared by the well-known method of quench-cooling of the melt. The solid dispersion was prepared by a solvent evaporation method of zopiclone, polyvinylpyrrolidone-25 (PVP-25), and methanol, followed by freeze-drying. The physico-chemical properties and stability of amorphous zopiclone and the solid dispersion was studied using differential scanning calorimetry (DSC), infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), scanning electron microscopy (SEM), hot-stage microscopy (HSM), X-ray diffractometry (XRD), solubility, and dissolution studies. The zopiclone amorphous solid-state form was determined to be a fragile glass; it was concluded that the stability of the amorphous form is influenced by both temperature and water. Exposure of amorphous zopiclone to moisture results in rapid transformation of the amorphous form to the crystalline dihydrated form. In comparison, the amorphous solid dispersion proved to be more stable with increased aqueous solubility.

  8. Amorphous molybdenum silicon superconducting thin films

    SciTech Connect

    Bosworth, D. Sahonta, S.-L.; Barber, Z. H.; Hadfield, R. H.

    2015-08-15

    Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using W{sub x}Si{sub 1−x}, though other amorphous superconductors such as molybdenum silicide (Mo{sub x}Si{sub 1−x}) offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc) reaches a maximum of 7.6 K at a composition of Mo{sub 83}Si{sub 17}. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz), there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  9. Compensated amorphous silicon solar cell

    DOEpatents

    Carlson, David E.

    1980-01-01

    An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

  10. Optical multilayers with an amorphous fluoropolymer

    NASA Astrophysics Data System (ADS)

    Chow, Robert; Loomis, Gary E.; Lindsey, Edward F.

    1994-09-01

    Multilayered coatings were made by physical vapor deposition (PVD) of a perfluorinated amorphous polymer, Teflon AF2400, together with other optical materials. A high reflector at 1064 nm was made with ZnS and AF2400. An all-organic 1064-nm reflector was made from AF2400 and polyethylene. Oxide (HfO2, SiO2) compatibility was also tested. Each multilayer system adhered to itself. The multilayers were influenced by coating stress and unintentional temperature rises during PVD deposition.

  11. Compensated amorphous silicon solar cell

    DOEpatents

    Devaud, Genevieve

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  12. Characterizing Amorphous Silicates in Extraterrestrial Materials

    NASA Astrophysics Data System (ADS)

    Fu, X.; Wang, A.; Krawczynski, M. J.

    2015-12-01

    Amorphous silicates are common in extraterrestrial materials. They are seen in the matrix of carbonaceous chondrites as well as in planetary materials. Tagish Lake is one of the most primitive carbonaceous meteorites in which TEM and XRD analyses found evidence for poorly crystalline phyllosilicate-like species; Raman spectra revealed amorphous silicates with variable degree of polymerization and low crystallinity. On Mars, CheMin discovered amorphous phases in all analyzed samples, and poorly crystalline smectite in mudstone samples. These discoveries pose questions on the crystallinity of phyllosilicates found by remote sensing on Mars, which is directly relevant to aqueous alteration during geologic history of Mars. Our goal is to use spectroscopy to better characterize amorphous silicates. We use three approaches: (1) using silicate glasses synthesized with controlled chemistry to study the effects of silicate polymerization and (2) using phyllosilicates synthesized with controlled hydrothermal treatment to study the effect of crystallinity on vibrational spectroscopy, finally (3) to use the developed correlations in above two steps to study amorphous phases in meteorites, and those found in future missions to Mars. In the 1st step, silicate glasses were synthesized from pure oxides in a range of NBO/T ratios (from 0 to 4). Depending on the targeted NBO/T and composition of mixed oxides, temperatures for each experiment fell in a range from 1260 to 1520 °C, run for ~ 4 hrs. The melt was quenched in liquid N2 or water. Homogeneity of glass was checked under optical microscopy. Raman spectra were taken over 100 spots on small chips free of bubbles and crystals. We have observed that accompanying an increase of NBO/T, there is a strengthening and a position shift of the Raman peak near 1000 cm-1 (Si-Onon-bridging stretching mode), and the weakening of broad Raman peaks near 500 cm-1 (ring breathing mode) and 700cm-1 (Si-Obridging-Si mode). We are building the

  13. Bulk amorphous materials

    SciTech Connect

    Schwarz, R.B.; Archuleta, J.I.; Sickafus, K.E.

    1998-12-01

    This is the final report for a three-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The objective of this work was to develop the competency for the synthesis of novel bulk amorphous alloys. The authors researched their synthesis methods and alloy properties, including thermal stability, mechanical, and transport properties. The project also addressed the development of vanadium-spinel alloys for structural applications in hostile environments, the measurement of elastic constants and thermal expansion in single-crystal TiAl from 300 to 750 K, the measurement of elastic constants in gallium nitride, and a study of the shock-induced martensitic transformations in NiTi alloys.

  14. Containerless processing of amorphous ceramics

    NASA Technical Reports Server (NTRS)

    Weber, J. K. Richard; Krishnan, Shankar; Schiffman, Robert A.; Nordine, Paul C.

    1990-01-01

    The absence of gravity allows containerless processing of materials which could not otherwise be processed. High melting point, hard materials such as borides, nitrides, and refractory metals are usually brittle in their crystalline form. The absence of dislocations in amorphous materials frequently endows them with flexibility and toughness. Systematic studies of the properties of many amorphous materials have not been carried out. The requirements for their production is that they can be processed in a controlled way without container interaction. Containerless processing in microgravity could permit the control necessary to produce amorphous forms of hard materials.

  15. Amorphous photonic membranes for broadband chemical sensing applications

    NASA Astrophysics Data System (ADS)

    Abbey, Sonja P.; Whaley, Ralph D., Jr.

    2012-01-01

    While there has been extensive development on integrated sensors in the near-IR region due to the maturation of Si, SOI, and III-V materials, these technologies are not easily translated into the visible and near-UV regions which are critical for the detection of many chemicals of environmental and security interest. This work focuses on the use of wide bandgap, amorphous materials, specifically, amorphous zinc oxide (a-ZnO), amorphous hafnium oxide (a-HfO2) and amorphous beryllium zinc oxide (a-BeZnO), in the development of broadband chemical sensors operating at critical absorption lines spanning the near-UV (200 nm) to the near-IR (1.55 μm). The architecture employed for this research is a nanoscale membrane (typically 40 - 100 nm thick) that supports a guided low optical overlap mode (LOOM) - an optical mode in which approximately 1% of the electric field is confined to the lossy core region. The resulting extended mode has a greatly enhanced analyte overlap, yielding a device sensitivity (~70%) that is over an order of magnitude higher than current high-performance, dielectric evanescent wave sensors (~2%) as modeled by analytical and finite element methods. Due to the extended nature of the LOOM, sensing across the entire spectral range can be achieved with a single waveguide design - critical for multi-point chemical sensing architectures.

  16. Amorphous and Ultradisperse Crystalline Materials,

    DTIC Science & Technology

    The book sums up experimental and theoretical findings on amorphous and ultradisperse crystalline materials , massive and film types. Present-day... crystalline materials of metallic systems are presented. Emphasis is placed on inorganic film materials.

  17. Fabrication of amorphous diamond films

    DOEpatents

    Falabella, S.

    1995-12-12

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  18. Characterization Techniques for Amorphous Alloys

    NASA Astrophysics Data System (ADS)

    Carow-Watamura, U.; Louzguine, D. V.; Takeuchi, A.

    This document is part of Part 2 http://dx.doi.org/10.1007/9getType="URL"/> 'Systems from B-Be-Fe to Co-W-Zr' of Subvolume B 'Physical Properties of Ternary Amorphous Alloys' of Volume 37 'Phase Diagrams and Physical Properties of Nonequilibrium Alloys' of Landolt-Börnstein - Group III 'Condensed Matter'. It contains the Chapter '2 Characterization Techniques for Amorphous Alloys' with the content:

  19. Amorphous metal alloy and composite

    DOEpatents

    Wang, Rong; Merz, Martin D.

    1985-01-01

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  20. Thermally reduced graphenes exhibiting a close relationship to amorphous carbon

    NASA Astrophysics Data System (ADS)

    An Wong, Colin Hong; Ambrosi, Adriano; Pumera, Martin

    2012-07-01

    Graphene is an important material for sensing and energy storage applications. Since the vast majority of sensing and energy storage chemical and electrochemical systems require bulk quantities of graphene, thermally reduced graphene oxide (TRGO) is commonly employed instead of pristine graphene. The sp2 planar structure of TRGO is heavily damaged, consisting of a very short sp2 crystallite size of nanometre length and with areas of sp3 hybridized carbon. Such a structure of TRGO is reminiscent of the key characteristic of the structure of amorphous carbon, which is defined as a material without long-range crystalline order consisting of both sp2 and sp3 hybridized carbons. Herein, we describe the characterization of TRGO, its parent graphite material and carbon black (a form of amorphous carbon) via transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry experiments. We used the data obtained as well as consideration of practical factors to perform a comparative assessment of the relative electrochemical performances of TRGO against amorphous carbon. We found out that TRGO and amorphous carbon exhibit almost identical characteristics in terms of density of defects in the sp2 lattice and a similar crystallite size as determined by Raman spectroscopy. These two materials also exhibit similar amounts of oxygen containing groups as determined by XPS and nearly indistinguishable cyclic voltammetric response providing almost identical heterogeneous electron transfer constants. This leads us to conclude that for some sensing and energy storage electrochemical applications, the use of amorphous carbon might be a much more economical solution than the one requiring digestion of highly crystalline graphite with strong oxidants to graphite oxide and then thermally exfoliating it to thermally reduced graphene oxide.

  1. Complex Amorphous Dielectrics

    SciTech Connect

    van Dover, Robert Bruce

    2014-11-22

    This work focused on synthesizing a wide range of oxides containing two or more metals, and measuring their properties. Many simple metal oxides such as zirconium oxide, have been extensively studied in the past. We developed a technique in which we create a large number of compositions simultaneously and examine their behavior to understand trends and identify high performance materials. Superior performance generally comes in the form of increased responsiveness; in the materials we have studied this may mean more electrical charge for a given voltage in a capacitor, faster switching for a given drive in a transistor, more current for a given voltage in an ionic conductor, or more current for a given illumination in a solar cell. Some of the materials we have identified may find use in decreasing the power needed to operate integrated circuits, other materials could be useful for solar power or other forms of energy conversion.

  2. Crystallization behavior of iron-based amorphous nanoparticles prepared sonochemically.

    PubMed

    Enomoto, Naoya; Hirata, Shingo; Inada, Miki; Hayashi, Katsuro

    2017-03-01

    In general, a rapid quenching is required to obtain an amorphous metal. It is known that an intensive ultrasonication generates a very high temperature within cavitation bubbles in a very short moment, which enables a rapid quenching process in a liquid phase synthesis. In this study, the sonochemically-derived "amorphous iron" from Fe(CO)5 was carefully examined by XRD, TEM, TG-DTA. The product was found to be an amorphous containing a certain amount (∼15%) of volatile component that can be removed by heating in a nitrogen flow. After annealed in the inert atmosphere at 600°C, cooled down to room temperature, and then exposed in air (oxygen), the sample showed a strong exotherm accompanied by a weight gain. This is due to oxidation of fine metallic iron. Experimental operations of such a reactive material were examined.

  3. Electrooptical properties and structural features of amorphous ITO

    SciTech Connect

    Amosova, L. P.

    2015-03-15

    Thin indium-tin oxide (ITO) films are deposited onto cold substrates by magnetron-assisted sputtering. The dependences of the structural, electrical, and optical properties of the films on the oxygen content in the atmosphere of sputtering and the growth rate are studied. It is shown that, if the substrate temperature is no higher than the ITO crystallization temperature and the conditions of growth deviate from the optimal relationship between the oxygen pressure and the growth rate, the resistance of the layers can be six or seven orders of magnitude higher than the resistance of conducting amorphous layers and reach hundreds of megaohms. At the same time, the optical properties of insulating layers in the visible spectral region are completely identical to the properties of the conducing amorphous modification. A conceptual model of defects responsible for the insulating properties of amorphous ITO is proposed.

  4. Hydrogenated amorphous silicon photonics

    NASA Astrophysics Data System (ADS)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  5. Amorphous carbon for photovoltaics

    NASA Astrophysics Data System (ADS)

    Risplendi, Francesca; Grossman, Jeffrey C.

    2015-03-01

    All-carbon solar cells have attracted attention as candidates for innovative photovoltaic devices. Carbon-based materials such as graphene, carbon nanotubes (CNT) and amorphous carbon (aC) have the potential to present physical properties comparable to those of silicon-based materials with advantages such as low cost and higher thermal stability.In particular a-C structures are promising systems in which both sp2 and sp3 hybridization coordination are present in different proportions depending on the specific density, providing the possibility of tuning their optoelectronic properties and achieving comparable sunlight absorption to aSi. In this work we employ density functional theory to design suitable device architectures, such as bulk heterojunctions (BHJ) or pn junctions, consisting of a-C as the active layer material.Regarding BHJ, we study interfaces between aC and C nanostructures (such as CNT and fullerene) to relate their optoelectronic properties to the stoichiometry of aC. We demonstrate that the energy alignment between the a-C mobility edges and the occupied and unoccupied states of the CNT or C60 can be widely tuned by varying the aC density to obtain a type II interface.To employ aC in pn junctions we analyze the p- and n-type doping of a-C focusingon an evaluation of the Fermi level and work function dependence on doping.Our results highlight promising features of aC as the active layer material of thin-film solar cells.

  6. Irradiation-induced amorphization and order-disorder transformation in the tungsten delta-phase oxides Yb6W1O12 and Y6W1O12

    SciTech Connect

    Tang, Ming; Uberuaga, Blas; Valdez, James; Sickafus, Kurt

    2008-01-01

    Polycrystalline Yb{sub 6}W{sub 1}O{sub 12} and Y{sub 6}W{sub 1}O{sub 12} samples, which possess rhombohedral symmetry (structure known as the {delta}-phase, closely related to cubic fluorite structure), were irradiated with 280 keV Kr{sup ++} ions to fluences up to 2 x 10{sup 20} ions/m{sup 2} at cryogenic temperature (100 K). Ion irradiation damage effects in these samples were examined using grazing incidence X-ray diffraction (GIXRD) and cross-sectional transmission electron microscopy (TEM). Irradiation-induced amorphization in both compounds has been observed by GIXRD and TEM, while the amorphization dose for Yb{sub 6}W{sub 1}O{sub 12} is lower than that for Yb{sub 6}W{sub 1}O{sub 12}. Experimental results also revealed that both irradiated samples experience an ordered rhombohedral to disordered cubic fluorite (O-D) transformation before amorphization. Factors influencing the irradiation damage response of these two compounds will be discussed in terms of cation radius ratio and cation antisite formation energy calculated by density functional theory (DFT).

  7. Allotropic composition of amorphous carbon

    SciTech Connect

    Yastrebov, S. G. Ivanov-Omskii, V. I.

    2007-08-15

    Using the concept of an inhomogeneous broadening of spectral lines of the basic oscillators responsible for forming the spectrum, the experimental dependences of the dispersion of the imaginary part of permittivity are analyzed for amorphous carbon. It turned out that four types of oscillators contribute to this dependence. The first three types represent the electron transitions from the energy-spectrum ground state for {pi} and {sigma} electrons of amorphous carbon to an excited state. The fourth type is related to the absorption of electromagnetic radiation by free charge carriers. The absolute values of squared plasma frequencies of oscillators are estimated, and, using them, the relative fraction of sp{sup 2}-bonded atoms forming the amorphous-carbon skeleton is calculated. This estimate agrees closely with the theoretical predictions for amorphous carbon of the same density as the material under study. The dependence of the relative fraction of sp{sup 2}-bonded atoms contained in amorphous hydrogenised carbon on annealing temperature is determined. The developed method is also applied to the analysis of the normalized curve for the light extinction in the interstellar medium. The contribution to the extinction of two varieties of interstellar matter is detected.

  8. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    NASA Astrophysics Data System (ADS)

    Li, Xiaopu; Ma, Chung T.; Lu, Jiwei; Devaraj, Arun; Spurgeon, Steven R.; Comes, Ryan B.; Poon, S. Joseph

    2016-01-01

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  9. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    SciTech Connect

    Li, Xiaopu Ma, Chung T.; Poon, S. Joseph; Lu, Jiwei; Devaraj, Arun; Spurgeon, Steven R.; Comes, Ryan B.

    2016-01-04

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  10. Nanostructures having crystalline and amorphous phases

    DOEpatents

    Mao, Samuel S; Chen, Xiaobo

    2015-04-28

    The present invention includes a nanostructure, a method of making thereof, and a method of photocatalysis. In one embodiment, the nanostructure includes a crystalline phase and an amorphous phase in contact with the crystalline phase. Each of the crystalline and amorphous phases has at least one dimension on a nanometer scale. In another embodiment, the nanostructure includes a nanoparticle comprising a crystalline phase and an amorphous phase. The amorphous phase is in a selected amount. In another embodiment, the nanostructure includes crystalline titanium dioxide and amorphous titanium dioxide in contact with the crystalline titanium dioxide. Each of the crystalline and amorphous titanium dioxide has at least one dimension on a nanometer scale.

  11. Amorphous-diamond electron emitter

    DOEpatents

    Falabella, Steven

    2001-01-01

    An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

  12. Imprinting bulk amorphous alloy at room temperature

    PubMed Central

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; Lograsso, Thomas A.; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2015-01-01

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. Our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment. PMID:26563908

  13. Imprinting bulk amorphous alloy at room temperature

    SciTech Connect

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; Lograsso, Thomas A.; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2015-11-13

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. In conclusion, our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment.

  14. Model for amorphous aggregation processes

    NASA Astrophysics Data System (ADS)

    Stranks, Samuel D.; Ecroyd, Heath; van Sluyter, Steven; Waters, Elizabeth J.; Carver, John A.; von Smekal, Lorenz

    2009-11-01

    The amorphous aggregation of proteins is associated with many phenomena, ranging from the formation of protein wine haze to the development of cataract in the eye lens and the precipitation of recombinant proteins during their expression and purification. While much literature exists describing models for linear protein aggregation, such as amyloid fibril formation, there are few reports of models which address amorphous aggregation. Here, we propose a model to describe the amorphous aggregation of proteins which is also more widely applicable to other situations where a similar process occurs, such as in the formation of colloids and nanoclusters. As first applications of the model, we have tested it against experimental turbidimetry data of three proteins relevant to the wine industry and biochemistry, namely, thaumatin, a thaumatinlike protein, and α -lactalbumin. The model is very robust and describes amorphous experimental data to a high degree of accuracy. Details about the aggregation process, such as shape parameters of the aggregates and rate constants, can also be extracted.

  15. Amorphous rare earth magnet powders

    SciTech Connect

    Sellers, C.H.; Branagan, D.J.; Hyde, T.A.; Lewis, L.H.; Panchanathan, V.

    1996-08-01

    Gas atomization (GA) processing does not generally have a high enough cooling rate to produce the initial amorphous microstructure needed to obtain optimal magnetic properties in RE{sub 2}Fe{sub 14}B alloys. Phase separation and an underquenched microstructure result from detrimental {alpha}-Fe precipitation, and the resulting magnetic domain structure is very coarse. Additionally, there is a dramatic dependence of the magnetic properties on the cooling rate (and therefore the particle size) and the powders can be sensitive to environmental degradation. Alloy compositions designed just for GA (as opposed to melt spinning) are necessary to produce an amorphous structure that can be crystallized to result in a fine structure with magnetic properties which are independent of particle size. The addition of titanium and carbon to the melt has been found to change the solidification process sufficiently to result in an ``overquenched`` state in which most of the powder size fractions have an amorphous component. Crystallization with a brief heat treatment produces a structure which has improved magnetic properties, in part due to the ability to use compositions with higher Fe contents without {alpha}-Fe precipitation. Results from magnetometry, magnetic force microscopy, and x-ray analyses will be used to contrast the microstructure, domain structure, and magnetic properties of this new generation of amorphous powders with their multiphase predecessors.

  16. Properties of ITO thin films deposited on amorphous and crystalline substrates with e-beam evaporation

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Beling, C. D.; Djurisic, A. B.; Li, S.; Fung, S.

    2004-06-01

    Indium tin oxide (ITO) thin films were deposited using the e-beam evaporation method on amorphous and crystalline substrates under identical conditions. The properties of the films were investigated using optical transmittance, XRD and XPS techniques. It was found that the properties of the films depend strongly on the nature of the substrate surface. Analysis suggests that changes in chemical composition and microstructure of the ITO films deposited on crystalline and amorphous substrates are responsible for the differences in optical properties.

  17. Flexible amorphous metal films with high stability

    NASA Astrophysics Data System (ADS)

    Liu, M.; Cao, C. R.; Lu, Y. M.; Wang, W. H.; Bai, H. Y.

    2017-01-01

    We report the formation of amorphous Cu50Zr50 films with a large-area of more than 100 cm2. The films were fabricated by ion beam assisted deposition with a slow deposition rate at moderate temperature. The amorphous films have markedly enhanced thermal stability, excellent flexibility, and high reflectivity with atomic level smoothness. The multifunctional properties of the amorphous films are favorites in the promising applications of smart skin or wearable devices. The method of preparing highly stable amorphous metal films by tuning the deposition rate instead of deposition temperature could pave a way for exploring amorphous metal films with unique properties.

  18. Amorphous molybdenum sulfides as hydrogen evolution catalysts.

    PubMed

    Morales-Guio, Carlos G; Hu, Xile

    2014-08-19

    from simple wet-chemical routes. Electron transport is sometimes slow in the particle catalysts, and an impedance model has been established to identify this slow electron transport. Finally, the amorphous molybdenum sulfide film catalyst has been integrated onto a copper(I) oxide photocathode for photoelectrochemical hydrogen evolution. The conformal catalyst efficiently extracts the excited electrons to give an impressive photocurrent density of -5.7 mA/cm(2) at 0 V vs RHE. The catalyst also confers good stability.

  19. Comparison of structural and electrical properties of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for α-InGaZnO thin-film transistors

    SciTech Connect

    Pan, Tung-Ming Chen, Ching-Hung; Her, Jim-Long; Koyama, Keiichi

    2014-11-21

    We compared the structural properties and electrical characteristics of high-κ Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for amorphous indium-gallium-zinc oxide (α-InGaZnO) thin-film transistor (TFT) applications. The Lu{sub 2}O{sub 3} film has a strong Lu{sub 2}O{sub 3} (400) peak in the X-ray diffraction pattern, while the Lu{sub 2}TiO{sub 5} sample shows a relatively weak Lu{sub 2}TiO{sub 5} (102) peak. Atomic force microscopy reveals that the Lu{sub 2}O{sub 3} dielectric exhibits a rougher surface (about three times) than Lu{sub 2}TiO{sub 5} one. In X-ray photoelectron spectroscopy analysis, we found that the intensity of the O 1s peak corresponding to Lu(OH){sub x} for Lu{sub 2}O{sub 3} film was higher than that of Lu{sub 2}TiO{sub 5} film. Furthermore, compared with the Lu{sub 2}O{sub 3} dielectric, the α-InGaZnO TFT using the Lu{sub 2}TiO{sub 5} gate dielectric exhibited a lower threshold voltage (from 0.43 to 0.25 V), a higher I{sub on}/I{sub off} current ratio (from 3.5 × 10{sup 6} to 1.3 × 10{sup 8}), a smaller subthreshold swing (from 276 to 130 mV/decade), and a larger field-effect mobility (from 14.5 to 24.4 cm{sup 2}/V s). These results are probably due to the incorporation of TiO{sub x} into the Lu{sub 2}O{sub 3} film to form a Lu{sub 2}TiO{sub 5} structure featuring a smooth surface, a low moisture absorption, a high dielectric constant, and a low interface state density at the oxide/channel interface. Furthermore, the stability of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} α-InGaZnO TFTs was investigated under positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS). The threshold voltage of the TFT performed under NGBS is more degradation than that under PGBS. This behavior may be attributed to the electron charge trapping at the dielectric–channel interface under PGBS, whereas the oxygen vacancies occurred in the InGaZnO under NGBS.

  20. Microstructure and surface chemistry of amorphous alloys important to their friction and wear behavior

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1983-01-01

    An investigation was conducted to examine the microstructure and surface chemistry of amorphous alloys, and their effects on tribological behavior. The results indicate that the surface oxide layers present on amorphous alloys are effective in providing low friction and a protective film against wear in air. Clustering and crystallization in amorphous alloys can be enhanced as a result of plastic flow during the sliding process at a low sliding velocity, at room temperature. Clusters or crystallines with sizes to 150 nm and a diffused honeycomb-shaped structure are produced on the wear surface. Temperature effects lead to drastic changes in surface chemistry and friction behavior of the alloys at temperatures to 750 C. Contaminants can come from the bulk of the alloys to the surface upon heating and impart to the surface oxides at 350 C and boron nitride above 500 C. The oxides increase friction while the boron nitride reduces friction drastically in vacuum.

  1. XRD technique: a way to discriminate structural changes in iron-based amorphous materials [An Alternative Method of Synthesizing Iron-based Amorphous Alloys

    SciTech Connect

    Saw, Cheng K.; Day, Dan; Farmer, Joe C.; Bauer, William

    2008-02-06

    Prevention of corrosion is a vital goal for the Department of Defense when billions of dollars are spent every year. Corrosion resistant materials have applications in all sort of military vehicles, and more importantly in naval vessels and submarines which come in contact with the seawater. It is known that corrosion resistance property can be improved by the used of structurally designed materials in the amorphous state where the atoms are arranged in a non-periodic fashion and specific atoms, tailored to the required properties can be interjected into the matrix for specific application. The XRD techniques reported here is to demonstrate the optimal conditions for characterization of these materials. The samples, which normally contain different compositions of Fe, Cr, B, Mo, Y, Mn, Si and W, are in the form of powders, ribbons and coatings. These results will be compared for the different forms of the sample which appears to correlate to the cooling rate during sample processing. In most cases, the materials are amorphous or amorphous with very small amount of crystallinity. In the ribbon samples for different compositions we observed that the materials are essentially amorphous. In most cases, starting from an amorphous powder sample, the coatings are also observed to be amorphous with a small amount of iron oxide on the surface, probably due to exposure to air.

  2. Amorphous cellulose gel as a fat substitute in fermented sausages.

    PubMed

    Campagnol, Paulo Cezar Bastianello; dos Santos, Bibiana Alves; Wagner, Roger; Terra, Nelcindo Nascimento; Rodrigues Pollonio, Marise Aparecida

    2012-01-01

    Fermented sausages were produced with 25%, 50%, 75% or 100% of their pork back fat content replaced by amorphous cellulose gel. The sausage production was monitored with physical, chemical and microbiological analyses. The final products were submitted to a consumer study, and the volatile compounds of the final products were extracted by solid-phase microextraction and analyzed by GC/MS. The reformulated fermented sausages had significant reductions in fat and cholesterol, and the volatile compounds derived from lipid oxidation were also reduced in the final products. These results suggest that the substitution of up to 50% of the pork back fat content by amorphous cellulose gel can be accomplished without a loss of product quality, enabling the production of fermented sausages with the levels of fat and cholesterol decreased by approximately 45% and 15%, respectively.

  3. The reliability and stability of multijunction amorphous silicon PV modules

    SciTech Connect

    Carlson, D.E.

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  4. Effects of controlling the interface trap densities in InGaZnO thin-film transistors on their threshold voltage shifts

    NASA Astrophysics Data System (ADS)

    Jeong, S.-W.; Lee, J.-T.; Roh, Y.

    2014-12-01

    In this paper, the threshold voltage stability characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) are discussed. The IGZO TFTs were found to induce a parallel threshold voltage ( V th ) shift with changing field effect mobility ( μ FE ) or a sub-threshold gate voltage swing ( SS) due to various thermal annealing conditions. The IGZO TFT that was post-annealed in an O2 ambient was found to be more stable for use in oxide-based TFT devices and to have better performance characteristics, such as the on/off current ratio ( I on/off ), SS, and V th , than other TFTs did. The mechanism for improving the V th stability in the post-annealed IGZO TFT is a decrease in the number of trap sites for the electrons and the weak oxygen bonding in the IGZO thin films. The device's performance could be significantly affected by adjusting the annealing conditions. This mechanism is closely related to that of modulation annealing, where the number of localized trapped carriers and defect centers at the interface or in the channel layer are reduced.

  5. Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility

    PubMed Central

    Lin, Hung-Cheng; Stehlin, Fabrice; Soppera, Olivier; Zan, Hsiao-Wen; Li, Chang-Hung; Wieder, Fernand; Ponche, Arnaud; Berling, Dominique; Yeh, Bo-Hung; Wang, Kuan-Hsun

    2015-01-01

    Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the requirements for direct photopatterning and for achieving semi-conducting properties with thermal annealing at moderate temperature. The DUV-induced crosslinking of the starting material allows direct write of semi-conducting channels in thin-film transistors but also it improves the field-effect mobility and surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry and AFM and the effect of DUV on the final material structure is discussed. The DUV irradiation step results in photolysis and a partial condensation of the inorganic network that freezes the sol-gel layer in a homogeneous distribution, lowering possibilities of thermally induced reorganization at the atomic scale. Laser irradiation allows high-resolution photopatterning and high-enough field-effect mobility, which enables the easy fabrication of oxide nanowires for applications in solar cell, display, flexible electronics, and biomedical sensors. PMID:26014902

  6. Narrow band gap amorphous silicon semiconductors

    DOEpatents

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  7. Amorphous silicon solar cell allowing infrared transmission

    DOEpatents

    Carlson, David E.

    1979-01-01

    An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

  8. Amorphous-Amorphous Phase Separation in API/Polymer Formulations.

    PubMed

    Luebbert, Christian; Huxoll, Fabian; Sadowski, Gabriele

    2017-02-15

    The long-term stability of pharmaceutical formulations of poorly-soluble drugs in polymers determines their bioavailability and therapeutic applicability. However, these formulations do not only often tend to crystallize during storage, but also tend to undergo unwanted amorphous-amorphous phase separations (APS). Whereas the crystallization behavior of APIs in polymers has been measured and modeled during the last years, the APS phenomenon is still poorly understood. In this study, the crystallization behavior, APS, and glass-transition temperatures formulations of ibuprofen and felodipine in polymeric PLGA excipients exhibiting different ratios of lactic acid and glycolic acid monomers in the PLGA chain were investigated by means of hot-stage microscopy and DSC. APS and recrystallization was observed in ibuprofen/PLGA formulations, while only recrystallization occurred in felodipine/PLGA formulations. Based on a successful modeling of the crystallization behavior using the Perturbed-Chain Statistical Associating Fluid Theory (PC-SAFT), the occurrence of APS was predicted in agreement with experimental findings.

  9. Amorphous silicon based radiation detectors

    SciTech Connect

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D. ); Fujieda, I.; Street, R.A. )

    1991-07-01

    We describe the characteristics of thin(1 {mu}m) and thick (>30{mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs.

  10. Preparation of amorphous sulfide sieves

    DOEpatents

    Siadati, Mohammad H.; Alonso, Gabriel; Chianelli, Russell R.

    2006-11-07

    The present invention involves methods and compositions for synthesizing catalysts/porous materials. In some embodiments, the resulting materials are amorphous sulfide sieves that can be mass-produced for a variety of uses. In some embodiments, methods of the invention concern any suitable precursor (such as thiomolybdate salt) that is exposed to a high pressure pre-compaction, if need be. For instance, in some cases the final bulk shape (but highly porous) may be same as the original bulk shape. The compacted/uncompacted precursor is then subjected to an open-flow hot isostatic pressing, which causes the precursor to decompose and convert to a highly porous material/catalyst.

  11. Structural study of amorphous polyaniline

    NASA Astrophysics Data System (ADS)

    Laridjani, M.; Pouget, J. P.; MacDiarmid, A. G.; Epstein, A. J.

    1992-06-01

    Many materials, especially polymers, have a substantial volume fraction with no long range crystalline order. Through these regions are often termed amorphous, they frequently have a specific local order. We describe and use here a method, base on a non-energy dispersive X-ray diffraction technique, to obtain good quality interference functions and, by Fourier transform, radial distribution functions of the amorphous structure of polymers. We apply this approach to members of a family of electronic polymers of current interest : polyaniline emeraldine bases. We show that the local order exhibits significant differences in type I and type II materials, precipitated as salt and base respectively. These studies demonstrate the importance of sample preparation in evaluating the physical properties of polyaniline, and provide a structural origin for memory effects observed in the doping-dedoping processes. Beaucoup de matériaux, spécialement les polymères, ont une importante fraction de leur volume sans ordre cristallin à longue portée. Bien que ces régions soient souvent appelées amorphes, elles présentent fréquemment un ordre local caractéristique. Nous décrivons et utilisons dans ce papier une méthode, basée sur une technique de diffraction de rayons X non dispersive en énergie, pour obtenir des fonctions d'interférence de bonne qualité et, par transformée de Fourier, la fonction de distribution radiale des polymères amorphes. Nous appliquons cette technique à plusieurs éléments d'une même famille de polymères électroniques d'intérêt actuel : les polyanilines éméraldine bases. Nous montrons que l'ordre local présente d'appréciables différences dans les matériaux de type I et II, préparés respectivement sous forme de sel et de base. Cette étude démontre l'importance des conditions de préparation sur les propriétés physiques du polyaniline et donne une base structurale aux effets observés dans les processus de dopage-dédopage de

  12. Is Mg-stabilized amorphous calcium carbonate a homogeneous mixture of amorphous magnesium carbonate and amorphous calcium carbonate?

    PubMed

    Yang, Sheng-Yu; Chang, Hsun-Hui; Lin, Cang-Jie; Huang, Shing-Jong; Chan, Jerry C C

    2016-10-04

    We find two types of carbonate ions in Mg stabilized amorphous calcium carbonate (Mg-ACC), whose short-range orders are identical to those of ACC and amorphous magnesium carbonate (AMC). Mg-ACC comprises a homogeneous mixture of the nano-clusters of ACC and AMC. Their relative amount varies systematically at different pH.

  13. Laser surface treatment of amorphous metals

    NASA Astrophysics Data System (ADS)

    Katakam, Shravana K.

    Amorphous materials are used as soft magnetic materials and also as surface coatings to improve the surface properties. Furthermore, the nanocrystalline materials derived from their amorphous precursors show superior soft magnetic properties than amorphous counter parts for transformer core applications. In the present work, laser based processing of amorphous materials will be presented. Conventionally, the nanocrystalline materials are synthesized by furnace heat treatment of amorphous precursors. Fe-based amorphous/nanocrystalline materials due to their low cost and superior magnetic properties are the most widely used soft magnetic materials. However, achieving nanocrystalline microstructure in Fe-Si-B ternary system becomes very difficult owing its rapid growth rate at higher temperatures and sluggish diffusion at low temperature annealing. Hence, nanocrystallization in this system is achieved by using alloying additions (Cu and Nb) in the ternary Fe-Si-B system. Thus, increasing the cost and also resulting in reduction of saturation magnetization. laser processing technique is used to achieve extremely fine nanocrystalline microstructure in Fe-Si-B amorphous precursor. Microstructure-magnetic Property-laser processing co-relationship has been established for Fe-Si-B ternary system using analytical techniques. Laser processing improved the magnetic properties with significant increase in saturation magnetization and near zero coercivity values. Amorphous materials exhibit excellent corrosion resistance by virtue of their atomic structure. Fe-based amorphous materials are economical and due to their ease of processing are of potential interest to synthesize as coatings materials for wear and corrosion resistance applications. Fe-Cr-Mo-Y-C-B amorphous system was used to develop thick coatings on 4130 Steel substrate and the corrosion resistance of the amorphous coatings was improved. It is also shown that the mode of corrosion depends on the laser processing

  14. Effect of annealing temperature on structural and electrical properties of high-κ YbTixOy gate dielectrics for InGaZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Pan, Tung-Ming; Chen, Fa-Hsyang; Hung, Meng-Ning

    2015-01-01

    This paper describes the effect of annealing temperature on the structural properties and electrical characteristics of high-κ YbTixOy gate dielectrics for indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). X-ray diffraction, x-ray photoelectron spectroscopy and atomic force microscopy were used to study the structural, chemical and morphological features, respectively, of these dielectric films annealed at 200, 300 and 400 °C. The YbTixOy IGZO TFT that had been annealed at 400 °C exhibited better electrical characteristics, such as a small threshold voltage of 0.53 V, a large field-effect mobility of 19.1 cm2 V-1 s-1, a high Ion/Ioff ratio of 2.8 × 107, and a low subthreshold swing of 176 mV dec.-1, relative to those of the systems that had been subjected to other annealing conditions. This result suggests that YbTixOy dielectric possesses a higher dielectric constant as well as lower oxygen vacancies (or defects) in the film. In addition, the instability of YbTixOy IGZO TFT was studied under positive gate-bias stress and negative gate-bias stress conditions.

  15. The research of differential reference electrode arrayed flexible IGZO glucose biosensor based on microfluidic framework

    NASA Astrophysics Data System (ADS)

    Chen, Jian-Syun; Chou, Jung-Chuan; Liao, Yi-Hung; Chen, Ruei-Ting; Huang, Min-Siang; Wu, Tong-Yu

    2017-03-01

    This study used a fast, simple, and low-cost method to fabricate arrayed flexible glucose biosensor, and the glucose biosensor was integrated with microfluidic framework for investigating sensing characteristics of glucose biosensor at the dynamic conditions. The indium gallium zinc oxide (IGZO) was adopted as sensing membrane and it was deposited on aluminum electrodes / polyethylene terephthalate (PET) substrate by the radio frequency sputtering system. Then, we utilized screen-printed technology to accomplish miniaturization of glucose biosensor. Finally, the glucose sensing membrane was composed of glucose oxidase (GOx) and nafion, which was dropped on IGZO sensing membrane to complete glucose biosensor. According to the experimental results, we found that optimal sensing characteristics of arrayed flexible IGZO glucose biosensor at the dynamic conditions were better than at the static conditions. The optimal average sensitivity and linearity of the arrayed flexible IGZO glucose biosensor were 7.255 mV/mM and 0.994 at 20 µL/min flow rate, respectively.

  16. Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

    SciTech Connect

    Noh, Joo Hyon; Joshi, Pooran C.; Kuruganti, Teja; Rack, Philip D.

    2014-11-26

    Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. The typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.

  17. Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage

    NASA Astrophysics Data System (ADS)

    Liang, Lingyan; Zhang, Shengnan; Wu, Weihua; Zhu, Liqiang; Xiao, Hui; Liu, Yanghui; Zhang, Hongliang; Javaid, Kashif; Cao, Hongtao

    2016-10-01

    An immunosensor is proposed based on the indium-gallium-zinc-oxide (IGZO) electric-double-layer thin-film transistor (EDL TFT) with a separating extended gate. The IGZO EDL TFT has a field-effect mobility of 24.5 cm2 V-1 s-1 and an operation voltage less than 1.5 V. The sensors exhibit the linear current response to label-free target immune molecule in the concentrations ranging from 1.6 to 368 × 10-15 g/ml with a detection limit of 1.6 × 10-15 g/ml (0.01 fM) under an ultralow operation voltage of 0.5 V. The IGZO TFT component demonstrates a consecutive assay stability and recyclability due to the unique structure with the separating extended gate. With the excellent electrical properties and the potential for plug-in-card-type multifunctional sensing, extended-gate-type IGZO EDL TFTs can be promising candidates for the development of a label-free biosensor for public health applications.

  18. Wafer-Scale Microwire Transistor Array Fabricated via Evaporative Assembly.

    PubMed

    Park, Jae Hoon; Sun, Qijun; Choi, Yongsuk; Lee, Seungwoo; Lee, Dong Yun; Kim, Yong Hoon; Cho, Jeong Ho

    2016-06-22

    One-dimensional (1D) nano/microwires have attracted significant attention as promising building blocks for various electronic and optical device applications. The integration of these elements into functional device networks with controlled alignment and density presents a significant challenge for practical device applications. Here, we demonstrated the fabrication of wafer-scale microwire field-effect transistor (FET) arrays based on well-aligned inorganic semiconductor microwires (indium-gallium-zinc-oxide (IGZO)) and organic polymeric insulator microwires fabricated via a simple and large-area evaporative assembly technique. This microwire fabrication method offers a facile approach to precisely manipulating the channel dimensions of the FETs. The resulting solution-processed monolithic IGZO microwire FETs exhibited a maximum electron mobility of 1.02 cm(2) V(-1) s(-1) and an on/off current ratio of 1 × 10(6). The appropriate choice of the polymeric microwires used to define the channel lengths enabled fine control over the threshold voltages of the devices, which were employed to fabricate high-performance depletion-load inverters. Low-voltage-operated microwire FETs were successfully fabricated on a plastic substrate using a high-capacitance ion gel gate dielectric. The microwire fabrication technique involving evaporative assembly provided a facile, effective, and reliable method for preparing flexible large-area electronics.

  19. Intrinsic delay of permeable base transistor

    SciTech Connect

    Chen, Wenchao; Guo, Jing; So, Franky

    2014-07-28

    Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barrier height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.

  20. Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

    DOE PAGES

    Noh, Joo Hyon; Joshi, Pooran C.; Kuruganti, Teja; ...

    2014-11-26

    Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. Themore » typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.« less

  1. Hydrogen effusion from tritiated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Kherani, N. P.; Liu, B.; Virk, K.; Kosteski, T.; Gaspari, F.; Shmayda, W. T.; Zukotynski, S.; Chen, K. P.

    2008-01-01

    Results for the effusion and outgassing of tritium from tritiated hydrogenated amorphous silicon (a-Si:H:T) films are presented. The samples were grown by dc-saddle field glow discharge at various substrate temperatures between 150 and 300°C. The tracer property of radioactive tritium is used to detect tritium release. Tritium effusion measurements are performed in a nonvacuum ion chamber and are found to yield similar results as reported for standard high vacuum technique. The results suggest for decreasing substrate temperature the growth of material with an increasing concentration of voids. These data are corroborated by analysis of infrared absorption data in terms of microstructure parameters. For material of low substrate temperature (and high void concentration) tritium outgassing in air at room temperature was studied, and it was found that after 600h about 0.2% of the total hydrogen (hydrogen+tritium) content is released. Two rate limiting processes are identified. The first process, fast tritium outgassing with a time constant of 15h, seems to be related to surface desorption of tritiated water (HTO) with a free energy of desorption of 1.04eV. The second process, slow tritium outgassing with a time constant of 200-300h, appears to be limited by oxygen diffusivity in a growing oxide layer. This material of lowest H stability would lose half of the hydrogen after 60years.

  2. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  3. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  4. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, Raoul B.

    1988-01-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  5. Method of making amorphous metal composites

    DOEpatents

    Byrne, Martin A.; Lupinski, John H.

    1982-01-01

    The process comprises placing an amorphous metal in particulate form and a low molecular weight (e.g., 1000-5000) thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite.

  6. Co amorphous systems: A product development perspective.

    PubMed

    Chavan, Rahul B; Thipparaboina, Rajesh; Kumar, Dinesh; Shastri, Nalini R

    2016-12-30

    Solubility is one of the major problems associated with most of the new chemical entities that can be reasonably addressed by drug amorphization. However, being a high-energy form, it usually tends to re-crystallize, necessitating new formulation strategies to stabilize amorphous drugs. Polymeric amorphous solid dispersion (PASD) is one of the widely investigated strategies to stabilize amorphous drug, with major limitations like limited polymer solubility and hygroscopicity. Co amorphous system (CAM), a new entrant in amorphous arena is a promising alternative to PASD. CAMs are multi component single phase amorphous solid systems made up of two or more small molecules that may be a combination of drugs or drug and excipients. Excipients explored for CAM preparation include amino acids, carboxylic acids, nicotinamide and saccharine. Advantages offered by CAM include improved aqueous solubility and physical stability of amorphous drug, with a potential to improve therapeutic efficacy. This review attempts to address different aspects in the development of CAM as drug products. Criterion for co-former selection, various methods involved in CAM preparation, characterization tools, stability, scale up and regulatory requirements for the CAM product development are discussed.

  7. Electron beam recrystallization of amorphous semiconductor materials

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.

    1968-01-01

    Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

  8. Imprinting bulk amorphous alloy at room temperature

    DOE PAGES

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; ...

    2015-11-13

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the abilitymore » of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. In conclusion, our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment.« less

  9. Compensated amorphous-silicon solar cell

    DOEpatents

    Devaud, G.

    1982-06-21

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  10. Neutron irradiation induced amorphization of silicon carbide

    SciTech Connect

    Snead, L.L.; Hay, J.C.

    1998-09-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 {times} 10{sup 25} n/m{sup 2}. Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density ({minus}10.8%), elastic modulus as measured using a nanoindentation technique ({minus}45%), hardness as measured by nanoindentation ({minus}45%), and standard Vickers hardness ({minus}24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C.

  11. Amorphization of sugar hydrates upon milling.

    PubMed

    Willart, J F; Dujardin, N; Dudognon, E; Danède, F; Descamps, M

    2010-07-19

    The possibility to amorphize anhydrous crystalline sugars, like lactose, trehalose and glucose, by mechanical milling was previously reported. We test here the possibility to amorphize the corresponding crystalline hydrates: lactose monohydrate, trehalose dihydrate and glucose monohydrate using fully identical milling procedures. The results show that only the first hydrate amorphizes while the other two remain structurally invariant. These different behaviours are attributed to the plasticizing effect of the structural water molecules which can decrease the glass transition temperature below the milling temperature. The results reveal clearly the fundamental role of the glass transition in the solid-state amorphization process induced by milling, and they also explain why crystalline hydrates are systematically more difficult to amorphize by milling than their anhydrous counterpart. The investigations have been performed by differential scanning calorimetry and powder X-ray diffraction.

  12. Structure, thermodynamics, and crystallization of amorphous hafnia

    SciTech Connect

    Luo, Xuhui; Demkov, Alexander A.

    2015-09-28

    We investigate theoretically amorphous hafnia using the first principles melt and quench method. We identify two types of amorphous structures of hafnia. Type I and type II are related to tetragonal and monoclinic hafnia, respectively. We find type II structure to show stronger disorder than type I. Using the phonon density of states, we calculate the specific heat capacity for type II amorphous hafnia. Using the nudged elastic band method, we show that the averaged transition barrier between the type II amorphous hafnia and monoclinic phase is approximately 0.09 eV/HfO{sub 2}. The crystallization temperature is estimated to be 421 K. The calculations suggest an explanation for the low thermal stability of amorphous hafnia.

  13. Determination of iron sites and the amount of amorphization in radiation-damaged titanite (CaSiTiO5).

    PubMed

    Salje, E K H; Safarik, D J; Taylor, R D; Pasternak, M P; Modic, K A; Groat, L A; Lashley, J C

    2011-03-16

    Iron is a ubiquitous impurity in metamict (radiation-damaged and partially amorphized) materials such as titanite (CaSiTiO(5)). Using (57)Fe Mössbauer spectroscopy we find that iron in metamict titanite is partitioned between amorphous and crystalline regions based on valence. Trivalent iron exists in the crystalline titanite matrix whereas divalent iron exists almost exclusively in radiation-amorphized regions. We find that the relative abundances of the oxidation states correlate with the volume fraction of amorphous and crystalline regions. Our data also show that oxidation of iron proceeds along with the recrystallization of the amorphized regions. Recrystallization is confirmed to occur over the range 700 °C < T < 925 °C, and no further structural changes are observed at higher temperatures. It is surprising that our Mössbauer measurements show divalent iron to be surrounded by titanite with a high degree of short-range structural order in the amorphized regions. This observation is fundamentally different from other metamict materials such as zircon (ZrSiO(4)), where amorphized regions show no short-range order.

  14. Amorphous vanadyl phosphate/graphene composites for high performance supercapacitor electrode

    NASA Astrophysics Data System (ADS)

    Chen, Ningna; Zhou, Jinhua; Kang, Qi; Ji, Hongmei; Zhu, Guoyin; Zhang, Yu; Chen, Shanyong; Chen, Jing; Feng, Xiaomiao; Hou, Wenhua

    2017-03-01

    Amorphous vanadyl phosphate/graphene nanohybrids is successfully synthesized by first exfoliating bulk layered vanadyl phosphate (VOPO4·2H2O) into nanosheets, and then hydrothermal treatment with graphene oxide (GO). The electrochemical properties of the resulted materials are systematically investigated. It is found that a phase transformation from crystalline to amorphous is occurred to VOPO4·2H2O. As supercapacitor electrode material, the amorphous VOPO4/graphene composite exhibits a high specific capacitance (508 F g-1 at 0.5 A g-1), an excellent rate capability (359 F g-1 at 10 A g-1), and a good cycling stability (retention 80% after 5000 cycles at 2 A g-1). Particularly, it simultaneously has a greatly enhanced energy density of 70.6 Wh·kg-1 with a power density of 250 W kg-1. The outstanding energy storage performance mainly originates from the generation of amorphous VOPO4 phase that facilitates ion transport by shortening ion diffusion paths and provides more reversible and fast faradic reaction sites, the hybridization with graphene that greatly improves the electric conductivity and structure stability, and the unique layer-on-sheet nanohybrid structure that effectively enhances the structure integrity. This work not only provides a facile method for the preparation of amorphous VOPO4/graphene composites, but also demonstrates the enhanced energy density and rate capability of amorphous VOPO4-based materials for potential application in supercapacitors.

  15. XRD Technique: A way to disseminate structural changes in iron-based amorphous materials

    SciTech Connect

    Saw, C K; Lian, T; Day, D; Farmer, J

    2007-05-24

    Prevention of corrosion is a vital goal for the Department of Defense when billions of dollars are spent every year. Corrosion resistant materials have applications in all sort of military vehicles, and more importantly in naval vessels and submarines which come in contact with the seawater. It is known that corrosion resistance property can be improved by the used of structurally designed materials in the amorphous state where the atoms are arranged in a non-periodic fashion and specific atoms, tailored to the required properties can be interjected into the matrix for specific application. The XRD techniques reported here is to demonstrate the optimal conditions for characterization of these materials. The samples, which normally contain different compositions of Fe, Cr, B, Mo, Y, Mn, Si and W, are in the form of powders, ribbons and coatings. These results will be compared for the different forms of the sample which appears to correlate to the cooling rate during sample processing. In most cases, the materials are amorphous or amorphous with very small amount of crystallinity. In the ribbon samples for different compositions we observed that the materials are essentially amorphous. In most cases, starting from an amorphous powder sample, the coatings are also observed to be amorphous with a small amount of iron oxide on the surface, probably due to exposure to air.

  16. Optimization of Conductivity and Transparency in Amorphous In-Zn-O Transparent Conductors: Preprint

    SciTech Connect

    Perkins, J.; Berry, J.; van Hest, M.; Alleman, J.; Dabney, M.; Gedvilas, L.; Ginley, D. S.; Leenheer, A.; O'Hayre, R.

    2008-05-01

    Amorphous mixed metal oxide TCOs are of increasing interest due to the excellent opto-electronic properties and smoothness (RRMS < 0.5 nm) obtained for sputtered films deposited at less than 100 ..deg..C. Here, we have investigated the combined materials phase space of oxygen stoichiometry and metals composition (In:Zn ratio) and made two key discoveries.

  17. Study of local atomic order in amorphous materials in a computerized transmission electron microscope.

    PubMed

    Balossier, G; Garg, R K; Bonhomme, P; Thomas, X

    1989-03-01

    Experimental results obtained by electron diffraction (ED) and extended electron energy loss fine structure (EXELFS) techniques to study the local atomic order in amorphous materials such as carbon, silicon, and its oxides are described. Potential applications of ED and EXELFS techniques and their limitations are also discussed.

  18. Locomotion of Amorphous Surface Robots

    NASA Technical Reports Server (NTRS)

    Bradley, Arthur T. (Inventor)

    2016-01-01

    An amorphous robot includes a compartmented bladder containing fluid, a valve assembly, and an outer layer encapsulating the bladder and valve assembly. The valve assembly draws fluid from a compartment(s) and discharges the drawn fluid into a designated compartment to displace the designated compartment with respect to the surface. Another embodiment includes elements each having a variable property, an outer layer that encapsulates the elements, and a control unit. The control unit energizes a designated element to change its variable property, thereby moving the designated element. The elements may be electromagnetic spheres with a variable polarity or shape memory polymers with changing shape and/or size. Yet another embodiment includes an elongated flexible tube filled with ferrofluid, a moveable electromagnet, an actuator, and a control unit. The control unit energizes the electromagnet and moves the electromagnet via the actuator to magnetize the ferrofluid and lengthen the flexible tube.

  19. Locomotion of Amorphous Surface Robots

    NASA Technical Reports Server (NTRS)

    Bradley, Arthur T. (Inventor)

    2014-01-01

    An amorphous robot includes a compartmented bladder containing fluid, a valve assembly, and an outer layer encapsulating the bladder and valve assembly. The valve assembly draws fluid from a compartment(s) and discharges the drawn fluid into a designated compartment to displace the designated compartment with respect to the surface. Another embodiment includes elements each having a variable property, an outer layer that encapsulates the elements, and a control unit. The control unit energizes a designated element to change its variable property, thereby moving the designated element. The elements may be electromagnetic spheres with a variable polarity or shape memory polymers with changing shape and/or size. Yet another embodiment includes an elongated flexible tube filled with ferrofluid, a moveable electromagnet, an actuator, and a control unit. The control unit energizes the electromagnet and moves the electromagnet via the actuator to magnetize the ferrofluid and lengthen the flexible tube.

  20. Biologically formed amorphous calcium carbonate.

    PubMed

    Weiner, Steve; Levi-Kalisman, Yael; Raz, Sefi; Addadi, Lia

    2003-01-01

    Many organisms from a wide variety of taxa produce amorphous calcium carbonate (ACC), despite the fact that it is inherently unstable and relatively soluble in its pure state. These properties also make it difficult to detect and characterize ACC. Raman spectroscopy is a particularly useful method for investigating ACC because the sample can be examined wet, and extended X-ray absorption fine structure (EXAFS) analysis can provide detailed information on the short-range order. Other methods for characterizing ACC include infrared spectroscopy, thermogravimetric analysis and differential thermal analysis (TGA and DTA), transmission electron microscopy (TEM), and electron and X-ray diffraction. Because of the difficulties involved, we suspect that ACC is far more widely distributed than is presently known, and a comparison of EXAFS spectra shows that different biogenic ACC phases have different short-range order structures. We also suspect that ACC fulfils many different functions, including as a transient precursor phase during the formation of crystalline calcium carbonate.

  1. Coating of calcia-doped ceria with amorphous silica shell by seeded polymerization technique

    SciTech Connect

    El-Toni, Ahmed Mohamed . E-mail: el-toni@mail.tagen.tohoku.ac.jp; Yin, Shu; Yabe, Shinryo; Sato, Tsugio

    2005-07-12

    Calcia-doped ceria is of potential interest as an ultraviolet (UV) radiation blocking material in personal care products. However, its high catalytic ability for oxidation of organic materials makes it difficult to use as a sunscreen material. Therefore, calcia-doped ceria was coated with amorphous silica by means of seeded polymerization technique in order to depress its oxidation catalytic ability. The catalytic ability as well as UV-shielding ability was investigated for coated particles.

  2. Crystalline to amorphous transformation in silicon

    SciTech Connect

    Cheruvu, S.M.

    1982-09-01

    In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects.

  3. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Gordon, R. G.; Hu, Jianhua; Musher, J.; Giunta, C.

    1991-02-01

    The specific objectives of this research are to: (1) deposit and characterize textured zinc oxide with improved conductivities (less than 8 ohms/square sheet resistance) and optical transmission (greater than 85 percent for 450 to 700 nm), for use as front and back contacts in hydrogenated amorphous silicon p-i-n devices; (2) study the surface morphology of zinc oxide films deposited by chemical vapor deposition at atmospheric pressure (APCVD), their crystallite sizes, shapes and orientations, and their nucleation (early growth) as a function of chemical precursors and reaction conditions; (3) optimize the growth process to produce structures that provide good light trapping in an amorphous silicon film deposited on the zinc oxide film; (4) study the deposition rate of zinc oxide films as a function of temperature, and concentration and types of reactants; (5) maximize the growth rate, subject to the conditions of maintaining satisfactory film properties, including high transparency (85 percent), high conductivity (8 ohm/square sheet resistance), and good light trapping; (6) develop techniques for deposition of fluorinated zinc oxide films by APCVD on amorphous silicon films in the temperature range of 250 to 280 C for use as back contacts; (7) deposit titanium nitride films at a temperature of about 250 C by APCVD on amorphous silicon as diffusion barrier, and then deposit highly reflective metals such as aluminum or silver; (8) anneal samples and test for metal diffusion through the TiN into the silicon; (9) optimize the TiN film for minimum diffusion consistent with maintaining desirable TiN film properties; and (10) incorporate the front and back contacts including the TiN barrier layer developed under this research into amorphous silicon p-i-n devices and determine the film parameters that provide the greatest improvement in the device solar energy conversion efficiency.

  4. Laser irradiation to produce amorphous pharmaceuticals.

    PubMed

    Titapiwatanakun, Varin; Tankul, Junlathip; Basit, Abdul W; Gaisford, Simon

    2016-11-30

    Using a high-power CO2 laser to irradiate powder beds, it was possible to induce phase transformation to the amorphous state. Irradiation of a model drug, indometacin, resulted in formation of a glass. Varying the settings of the laser (power and raster speed) was shown to change the physicochemical properties of the glasses produced and all irradiated glasses were found to be more stable than a reference glass produced by melt-quenching. Irradiation of a powder blend of paracetamol and polyvinylpyrrolidone K30 was found to produce a solid amorphous dispersion. The results suggest that laser-irradiation might be a useful method for making amorphous pharmaceuticals.

  5. Method of producing hydrogenated amorphous silicon film

    DOEpatents

    Wiesmann, Harold J.

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

  6. Characterization of mechanical heterogeneity in amorphous solids

    NASA Astrophysics Data System (ADS)

    Peng, H. L.; Li, M. Z.; Sun, B. A.; Wang, W. H.

    2012-07-01

    The structural geometry and size distribution of the local atomic rearrangements induced by external stress in amorphous solids are investigated by molecular dynamics studies. We find that the size distribution exhibits a generic power-law behavior and their structural geometry shows fractal feature. This indicates that the local atomic rearrangements in amorphous solids are self-organized during deformation. A simple theoretical model based on the interaction of the heterogeneous elastic field sources is proposed which predicts the power-law scaling and characterizes the properties of the local atomic rearrangements in amorphous solids.

  7. Origin of Magnetic Properties in Amorphous Metals.

    DTIC Science & Technology

    1979-12-01

    Magnetic Properties of Fe-Ni-B Amorphous Alloys," F. E. Luborsky, J. L. Walter, and H. H. Liebermann , IEEE Trans. on Magnetics MAG-15, 909 (1979). Also GE...Report 78CRD132. 2. "Formation and Magnetic Properties of Fe-B-Si Amorphous Alloys," F. E. Luborsky, J. J. Becker, J. L. Walter, and H. H. Liebermann ...Amorphous Alloys," F. E. Luborsky and H. H. Liebermann , J. Appl. Phys., to appear. Also GE Report 79CRD177. 4. "The Effect of Temperature on Magnetic

  8. Photonic crystals, amorphous materials, and quasicrystals

    PubMed Central

    Edagawa, Keiichi

    2014-01-01

    Photonic crystals consist of artificial periodic structures of dielectrics, which have attracted much attention because of their wide range of potential applications in the field of optics. We may also fabricate artificial amorphous or quasicrystalline structures of dielectrics, i.e. photonic amorphous materials or photonic quasicrystals. So far, both theoretical and experimental studies have been conducted to reveal the characteristic features of their optical properties, as compared with those of conventional photonic crystals. In this article, we review these studies and discuss various aspects of photonic amorphous materials and photonic quasicrystals, including photonic band gap formation, light propagation properties, and characteristic photonic states. PMID:27877676

  9. Gamma radiation effects in amorphous silicon and silicon nitride photonic devices.

    PubMed

    Du, Qingyang; Huang, Yizhong; Ogbuu, Okechukwu; Zhang, Wei; Li, Junying; Singh, Vivek; Agarwal, Anuradha M; Hu, Juejun

    2017-02-01

    Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4×10-3 in amorphous silicon and 5×10-4 in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change.

  10. Amorphous to Amorphous Form Transitions of Water Ice and Astrophysical Implications

    NASA Technical Reports Server (NTRS)

    Jenniskens, Peter; Blake, David F.; Chang, Sherwood (Technical Monitor)

    1994-01-01

    We have combined Selected Area Electron Diffraction (SAED) and cryogenic techniques in an instrumental configuration that allows observing the structure of vapor deposited ice as it evolves during warmup. The ice is deposited in-situ inside an Hitachi H-500 H transmission electron microscope at a base pressure of 1-5 x 10(exp -7) torr on a thin amorphous carbon substrate at 15K or 86K and warmed up at a rate of 1-2 K/min. We find a progression of amorphous forms and well defined amorphous to amorphous transitions. Apart from the well known low-density form of ice, we confirm the presence of a high-density form and find a third amorphous form that coexists with cubic ice. We will report too on the amorphous to crystalline transition and the implications of these results for radical diffusion and gas retention observed in laboratory analog studies of interstellar and cometary ices.

  11. Application of HAADF STEM image analysis to structure determination in rotationally disordered and amorphous multilayered films

    NASA Astrophysics Data System (ADS)

    Mitchson, Gavin; Ditto, Jeffrey; Woods, Keenan N.; Westover, Richard; Page, Catherine J.; Johnson, David C.

    2016-08-01

    We report results from high angle annular dark field scanning transmission electron microscopy (HAADF STEM) image analysis of complex semi-crystalline and amorphous materials, and apply the insights gained from local structure information towards global structure determination. Variations in HAADF STEM intensities for a rotationally disordered heterostructure and an amorphous oxide film are statistically analyzed to extract information regarding the inhomogeneity of the films perpendicular to the substrate. By assuming chemical homogeneity in the film axis parallel to the substrate, the signal intensity variation parallel to the substrate is used to estimate the signal noise level, allowing evaluation of the significance of intensity differences in the substrate normal direction. The positions of HAADF STEM intensity peaks in the perpendicular direction, averaged from multiple images, provide a valuable initial model for a Rietveld refinement of the global c-axis structure of the heterostructure. For an amorphous multi-coat solution-cast oxide sample, the analysis reveals statistically significant variations in the HAADF STEM intensity profile perpendicular to the substrate. These variations indicate an inhomogeneous density profile, presumably related to the spin-casting of individual layers and have implications for understanding the chemical interactions that occur between layers when preparing multilayer amorphous oxide films from solution.

  12. Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals

    DOEpatents

    Farmer, Joseph C.; Wong, Frank M. G.; Haslam, Jeffery J.; Yang, Nancy; Lavernia, Enrique J.; Blue, Craig A.; Graeve, Olivia A.; Bayles, Robert; Perepezko, John H.; Kaufman, Larry; Schoenung, Julie; Ajdelsztajn, Leo

    2009-11-17

    A system for coating a surface comprises providing a source of amorphous metal, providing ceramic particles, and applying the amorphous metal and the ceramic particles to the surface by a spray. The coating comprises a composite material made of amorphous metal that contains one or more of the following elements in the specified range of composition: yttrium (.gtoreq.1 atomic %), chromium (14 to 18 atomic %), molybdenum (.gtoreq.7 atomic %), tungsten (.gtoreq.1 atomic %), boron (.ltoreq.5 atomic %), or carbon (.gtoreq.4 atomic %).

  13. Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals

    DOEpatents

    Farmer, Joseph C.; Wong, Frank M.G.; Haslam, Jeffery J.; Yang, Nancy; Lavernia, Enrique J.; Blue, Craig A.; Graeve, Olivia A.; Bayles, Robert; Perepezko, John H.; Kaufman, Larry; Schoenung, Julie; Ajdelsztajn, Leo

    2014-07-15

    A system for coating a surface comprises providing a source of amorphous metal, providing ceramic particles, and applying the amorphous metal and the ceramic particles to the surface by a spray. The coating comprises a composite material made of amorphous metal that contains one or more of the following elements in the specified range of composition: yttrium (.gtoreq.1 atomic %), chromium (14 to 18 atomic %), molybdenum (.gtoreq.7 atomic %), tungsten (.gtoreq.1 atomic %), boron (.ltoreq.5 atomic %), or carbon (.gtoreq.4 atomic %).

  14. Amorphization of Silicon Carbide by Carbon Displacement

    SciTech Connect

    Devanathan, Ram; Gao, Fei; Weber, William J.

    2004-05-10

    We have used molecular dynamics simulations to examine the possibility of amorphizing silicon carbide (SiC) by exclusively displacing C atoms. At a defect generation corresponding to 0.2 displacements per atom, the enthalpy surpasses the level of melt-quenched SiC, the density decreases by about 15%, and the radial distribution function shows a lack of long-range order. Prior to amorphization, the surviving defects are mainly C Frenkel pairs (67%), but Si Frenkel pairs (18%) and anti-site defects (15%) are also present. The results indicate that SiC can be amorphized by C sublattice displacements. Chemical short-range disorder, arising mainly from interstitial production, plays a significant role in the amorphization.

  15. Amorphous Phases on the Surface of Mars

    NASA Technical Reports Server (NTRS)

    Rampe, E. B.; Morris, R. V.; Ruff, S. W.; Horgan, B.; Dehouck, E.; Achilles, C. N.; Ming, D. W.; Bish, D. L.; Chipera, S. J.

    2014-01-01

    Both primary (volcanic/impact glasses) and secondary (opal/silica, allophane, hisingerite, npOx, S-bearing) amorphous phases appear to be major components of martian surface materials based on orbital and in-situ measurements. A key observation is that whereas regional/global scale amorphous components include altered glass and npOx, local scale amorphous phases include hydrated silica/opal. This suggests widespread alteration at low water-to-rock ratios, perhaps due to snow/ice melt with variable pH, and localized alteration at high water-to-rock ratios. Orbital and in-situ measurements of the regional/global amorphous component on Mars suggests that it is made up of at least three phases: npOx, amorphous silicate (likely altered glass), and an amorphous S-bearing phase. Fundamental questions regarding the composition and the formation of the regional/global amorphous component(s) still remain: Do the phases form locally or have they been homogenized through aeolian activity and derived from the global dust? Is the parent glass volcanic, impact, or both? Are the phases separate or intimately mixed (e.g., as in palagonite)? When did the amorphous phases form? To address the question of source (local and/or global), we need to look for variations in the different phases within the amorphous component through continued modeling of the chemical composition of the amorphous phases in samples from Gale using CheMin and APXS data. If we find variations (e.g., a lack of or enrichment in amorphous silicate in some samples), this may imply a local source for some phases. Furthermore, the chemical composition of the weathering products may give insight into the formation mechanisms of the parent glass (e.g., impact glasses contain higher Al and lower Si [30], so we might expect allophane as a weathering product of impact glass). To address the question of whether these phases are separate or intimately mixed, we need to do laboratory studies of naturally altered samples made

  16. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    SciTech Connect

    Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Barbolla, J.; Srinivasan, M.P.

    2005-08-15

    We introduce a model for damage accumulation up to amorphization, based on the ion-implant damage structures commonly known as amorphous pockets. The model is able to reproduce the silicon amorphous-crystalline transition temperature for C, Si, and Ge ion implants. Its use as an analysis tool reveals an unexpected bimodal distribution of the defect population around a characteristic size, which is larger for heavier ions. The defect population is split in both size and composition, with small, pure interstitial and vacancy clusters below the characteristic size, and amorphous pockets with a balanced mixture of interstitials and vacancies beyond that size.

  17. Tests Of Amorphous-Silicon Photovoltaic Modules

    NASA Technical Reports Server (NTRS)

    Ross, Ronald G., Jr.

    1988-01-01

    Progress in identification of strengths and weaknesses of amorphous-silicon technology detailed. Report describes achievements in testing reliability of solar-power modules made of amorphous-silicon photovoltaic cells. Based on investigation of modules made by U.S. manufacturers. Modules subjected to field tests, to accelerated-aging tests in laboratory, and to standard sequence of qualification tests developed for modules of crystalline-silicon cells.

  18. A Magnetic Sensor with Amorphous Wire

    PubMed Central

    He, Dongfeng; Shiwa, Mitsuharu

    2014-01-01

    Using a FeCoSiB amorphous wire and a coil wrapped around it, we have developed a sensitive magnetic sensor. When a 5 mm long amorphous wire with the diameter of 0.1 mm was used, the magnetic field noise spectrum of the sensor was about 30 pT/√Hz above 30 Hz. To show the sensitivity and the spatial resolution, the magnetic field of a thousand Japanese yen was scanned with the magnetic sensor. PMID:24940865

  19. Picosecond Electronic Relaxations In Amorphous Semiconductors

    NASA Astrophysics Data System (ADS)

    Tauc, Jan

    1983-11-01

    Using the pump and probe technique the relaxation processes of photogenerated carriers in amorphous tetrahedral semiconductors and chalcogenide glasses in the time domain from 0.5 Ps to 1.4 ns have been studied. The results obtained on the following phenomena are reviewed: hot carrier thermalization in amorphous silicon; trapping of carriers in undoped a-Si:H; trapping of carriers in deep traps produced by doping; geminate recombination in As2S3-xSex glasses.

  20. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    NASA Technical Reports Server (NTRS)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.