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Sample records for amorphous semiconductors doped

  1. Charge transport in electrically doped amorphous organic semiconductors.

    PubMed

    Yoo, Seung-Jun; Kim, Jang-Joo

    2015-06-01

    This article reviews recent progress on charge generation by doping and its influence on the carrier mobility in organic semiconductors (OSs). The doping induced charge generation efficiency is generally low in OSs which was explained by the integer charge transfer model and the hybrid charge transfer model. The ionized dopants formed by charge transfer between hosts and dopants can act as Coulomb traps for mobile charges, and the presence of Coulomb traps in OSs broadens the density of states (DOS) in doped organic films. The Coulomb traps strongly reduce the carrier hopping rate and thereby change the carrier mobility, which was confirmed by experiments in recent years. In order to fully understand the doping mechanism in OSs, further quantitative and systematic analyses of charge transport characteristics must be accomplished.

  2. Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

    NASA Astrophysics Data System (ADS)

    Xie, Haiting; Wu, Qi; Xu, Ling; Zhang, Lei; Liu, Guochao; Dong, Chengyuan

    2016-11-01

    The amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with the double-stacked channel layers (DSCL) combing the amorphous InZnO (a-IZO) films and the nitrogen-doped amorphous InGaZnO (a-IGZO:N) films were proposed and fabricated, which showed the excellent performance with the field-effect mobility of 49.6 cm2 V-1 s-1 and the subthreshold swing of 0.5 V/dec. More interestingly, very stable properties were observed in the bias stress and light illumination tests for these a-IZO/a-IGZO:N TFTs, as seemed to be the evident improvements over the prior arts. The improved performance and stability might be mainly due to the hetero-junctions in the channel layers and less interface/bulk trap density from the in situ nitrogen doping process in the a-IGZO layers. In addition, the passivation effect of the a-IGZO:N films also made some contributions to the stable properties exhibited in these novel DSCL TFTs.

  3. Room temperature ferromagnetism in Co-doped amorphous carbon composites from the spin polarized semiconductor band

    SciTech Connect

    Hsu, H. S. Chien, P. C.; Chang, Y. Y.; Sun, S. J.; Lee, C. H.

    2014-08-04

    This study provides conclusive evidence of room temperature ferromagnetism in Co-doped amorphous carbon (a-C) composites from the spin polarized semiconductor band. These composites are constructed from discontinuous [Co(3 nm)/a-C(d{sub c} nm)]{sub 5} multilayers with d{sub c} = 3 nm and d{sub c} = 6 nm. Only remnant circular dichroism (CD) was observed from the d{sub c} = 3 nm sample but not when d{sub c} = 6 nm. In addition, the remnant CD peaks at 5.5 eV, which is comparable with the absorption peak associated with the C σ-σ* gap transition. We suggest that the possible mechanism for this coupling can be considered as a magnetic proximity effect in which a ferromagnetic moment in the C medium is induced by Co/C interfaces.

  4. Effect of substitutional doping on temperature dependent electrical parameters of amorphous Se-Te semiconductors

    NASA Astrophysics Data System (ADS)

    Sharma, Neha; Sharda, Sunanda; Sharma, Dheeraj; Sharma, Vineet; Barman, P. B.; Katyal, S. C.; Sharma, Pankaj; Hazra, S. K.

    2013-09-01

    Steady state current-voltage characteristics of the amorphous (Se80Te20)98Y2 (Y = Ag, Bi, Ge, Cd) semiconductors at different temperatures are reported. The measurements were performed using direct-current voltage bias to understand the basic conductivity mechanism and to evaluate the impact of each substituent on electrical response. The space charge limited conduction mechanism, and the density of states near Fermi level have been calculated. The difference in electrical response due to different substitutions in the glassy matrix is analyzed.

  5. Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

    SciTech Connect

    Seo, Hyungtak; Cho, Young-Je; Bobade, Santosh M.; Park, Kyoung-Youn; Choi, Duck-Kyun; Kim, Jinwoo; Lee, Jaegab

    2010-05-31

    We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to approx10{sup 18} cm{sup -3} from the background level of 10{sup 16} cm{sup -3}, as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at approx10{sup 8} and field-effect mobility at 22.7 cm{sup 2}/V s.

  6. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  7. Picosecond Electronic Relaxations In Amorphous Semiconductors

    NASA Astrophysics Data System (ADS)

    Tauc, Jan

    1983-11-01

    Using the pump and probe technique the relaxation processes of photogenerated carriers in amorphous tetrahedral semiconductors and chalcogenide glasses in the time domain from 0.5 Ps to 1.4 ns have been studied. The results obtained on the following phenomena are reviewed: hot carrier thermalization in amorphous silicon; trapping of carriers in undoped a-Si:H; trapping of carriers in deep traps produced by doping; geminate recombination in As2S3-xSex glasses.

  8. Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

    PubMed Central

    Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

    2016-01-01

    We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses. PMID:27812035

  9. Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration.

    PubMed

    Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

    2016-11-04

    We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses.

  10. Narrow band gap amorphous silicon semiconductors

    DOEpatents

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  11. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  12. Delta-doping of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schubert, E. F.

    2005-08-01

    Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta-doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog; 4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter; 6. Solid phase epitaxy for delta-doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.-J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann; 9. Capacitance-voltage profiling E. F. Schubert; 10. Redistribution of impurities in III-V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann; 12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman; 13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta-doped quantum wells W. T. Masselink; 17. Electron mobility in delta-doped layers P. M. Koenraad; 18. Hot electrons in delta-doped GaAs M. Asche; 19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.

  13. Theory of defects and dopants in amorphous and crystalline semiconductors

    NASA Astrophysics Data System (ADS)

    Stumm, Petra

    In this dissertation the structural and electronic consequences of defects and dopants in amorphous and crystalline semiconductors are investigated. The research that I have done explores these possibilities on a theoretical level. This work is aimed towards comprising a detailed study of the atomic scale structure and electrical properties of elemental and nitrogen doped ta-C. Further, results on a investigation of native defects in crystalline and amorphous GaN are reported. First principles methods are used for these calculations. Two structural tetrahedral amorphous carbon models were introduced, whose properties were in agreement with the available experimental data. The topological and electronic properties for different N doping concentrations were investigated. Substitutional N occurred in tetrahedral and pi bonded sites, which resulted in an increase of the Fermi energy, while N incorporation in strained network sites induced structural changes that lead to an increase in the spsp2 fraction of the material. Molecular dynamics simulations were employed to study defects in GaN, where charge transfer between the ions is included in an approximate fashion. We find good agreement for the band structure of wurtzite and zincblende GaN compared to other recent calculations, suggesting the suitability of our method to describe GaN. A 96 atom GaN supercell is used to study the relaxations and electronic properties of common defects in the crystal structure, including Ga and N vacancies and antisites. The prevalent conduction mechanisms in nitrogen doped tetrahedral amorphous carbon are identified and discussed. These results are compared to the recent experimental reports on N doping of ta-C and we find that the non-doping 3-fold N incorporation (Nsbsp{3}{0}) is energetically most likely, which explains the low doping efficiency seen in experiments. The electronic signatures of intrinsic defects in GaN are analyzed. Also, two 64 atom models of amorphous GaN at

  14. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  15. Electrons and phonons in amorphous semiconductors

    NASA Astrophysics Data System (ADS)

    Prasai, Kiran; Biswas, Parthapratim; Drabold, D. A.

    2016-07-01

    The coupling between lattice vibrations and electrons is one of the central concepts of condensed matter physics. The subject has been deeply studied for crystalline materials, but far less so for amorphous and glassy materials, which are among the most important for applications. In this paper, we explore the electron-lattice coupling using current tools of a first-principles computer simulation. We choose three materials to illustrate the phenomena: amorphous silicon (a-Si), amorphous selenium (a-Se) and amorphous gallium nitride (a-GaN). In each case, we show that there is a strong correlation between the localization of electron states and the magnitude of thermally induced fluctuations in energy eigenvalues obtained from the density-functional theory (i.e. Kohn-Sham eigenvalues). We provide a heuristic theory to explain these observations. The case of a-GaN, a topologically disordered partly ionic insulator, is distinctive compared to the covalent amorphous examples. Next, we explore the consequences of changing the charge state of a system as a proxy for tracking photo-induced structural changes in the materials. Where transport is concerned, we lend insight into the Meyer-Neldel compensation rule and discuss a thermally averaged Kubo-Greenwood formula as a means to estimate electrical conductivity and especially its temperature dependence. We close by showing how the optical gap of an amorphous semiconductor can be computationally engineered with the judicious use of Hellmann-Feynman forces (associated with a few defect states) using molecular dynamics simulations. These forces can be used to close or open an optical gap, and identify a structure with a prescribed gap. We use the approach with plane-wave density functional methods to identify a low-energy amorphous phase of silicon including several coordination defects, yet with a gap close to that of good quality a-Si models.

  16. (Magnetic properties of doped semiconductors)

    SciTech Connect

    Not Available

    1990-01-01

    Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)

  17. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOEpatents

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  18. Boron doping a semiconductor particle

    DOEpatents

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  19. Boron doping a semiconductor particle

    DOEpatents

    Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

    1998-06-09

    A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

  20. Phosphorous doping a semiconductor particle

    DOEpatents

    Stevens, Gary Don; Reynolds, Jeffrey Scott

    1999-07-20

    A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

  1. Phosphorus doping a semiconductor particle

    DOEpatents

    Stevens, G.D.; Reynolds, J.S.

    1999-07-20

    A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

  2. Method for measuring the drift mobility in doped semiconductors

    DOEpatents

    Crandall, Richard S.

    1982-01-01

    A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

  3. Method for measuring the drift mobility in doped semiconductors

    DOEpatents

    Crandall, R.S.

    1982-03-09

    A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

  4. Stress originating from nanovoids in hydrogenated amorphous semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Zumin; Flötotto, David; Mittemeijer, Eric J.

    2017-03-01

    Structural inhomogeneities in the form of voids of nanometer sizes (nanovoids) have long been known to be present in hydrogenated amorphous semiconductors (Si, Ge). The physical and electrical properties of hydrogenated amorphous semiconductors can be pronouncedly influenced by the presence and characteristics of such nanovoids. In this work, by measuring in situ the intrinsic stress developments during deposition of pure, amorphous and of hydrogenated amorphous semiconductor (Si, Ge) thin films, under the same conditions in ultrahigh vacuum and on a comparative basis, a major source of tensile stress development could be ascribed to the occurrence of nanovoids in a-Si:H and a-Ge:H. The measurements allowed a quantitative evaluation of the surface stress acting along the surface of the nanovoids: 1.1-1.9 N/m for a-Si:H and 0.9-1.9 N/m for a-Ge:H.

  5. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    SciTech Connect

    Kim, Junghwan Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  6. Electron beam recrystallization of amorphous semiconductor materials

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.

    1968-01-01

    Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

  7. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOEpatents

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  8. Method of depositing wide bandgap amorphous semiconductor materials

    DOEpatents

    Ellis, Jr., Frank B.; Delahoy, Alan E.

    1987-09-29

    A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

  9. Manipulating semiconductor colloidal stability through doping.

    PubMed

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  10. CHRONICLE: Fifth Conference of Scientists from Socialist Countries on Amorphous and Glassy Semiconductors ("Amorphous Semiconductors-80"), Kishinev, October 20-24, 1980

    NASA Astrophysics Data System (ADS)

    Semenov, A. S.; Smirnov, V. L.

    1981-05-01

    A brief review is given of the papers and communications on the optical properties of glassy chalcogenide semiconductors and their optical data storage applications, presented at the Amorphous Semiconductors-80 Conference.

  11. Amorphous metallizations for high-temperature semiconductor device applications

    NASA Technical Reports Server (NTRS)

    Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Kang-Jin, G.

    1981-01-01

    The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

  12. Method of doping organic semiconductors

    DOEpatents

    Kloc, Christian Leo [Constance, DE; Ramirez, Arthur Penn [Summit, NJ; So, Woo-Young [New Providence, NJ

    2012-02-28

    A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

  13. Phase transitions and doping in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  14. Unraveling the mechanism of molecular doping in organic semiconductors.

    PubMed

    Mityashin, Alexander; Olivier, Yoann; Van Regemorter, Tanguy; Rolin, Cedric; Verlaak, Stijn; Martinelli, Nicolas G; Beljonne, David; Cornil, Jérôme; Genoe, Jan; Heremans, Paul

    2012-03-22

    The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no electrical effect.

  15. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chang-Jung; Kim, Sangwook; Lee, Je-Hun; Park, Jin-Seong; Kim, Sunil; Park, Jaechul; Lee, Eunha; Lee, Jaechul; Park, Youngsoo; Kim, Joo Han; Shin, Sung Tae; Chung, U.-In

    2009-12-01

    We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structure and drastically decrease the carrier concentration and hall mobility in HIZO films. The thin film transistors (TFTs) with amorphous HIZO active channel exhibit good electrical properties with field effect mobility of around 10 cm2/Vs, S of 0.23 V/decade, and high Ion/off ratio of over 108, enough to operate the next electronic devices. In particular, under bias-temperature stress test, the HIZO TFTs with 0.3 mol % (Hf content) showed only 0.46 V shift in threshold voltage, compared with 3.25 V shift in HIZO TFT (0.1 mol %). The Hf ions may play a key role to improve the instability of TFTs due to high oxygen bonding ability. Therefore, the amorphous HIZO semiconductor will be a prominent candidate as an operation device for large area electronic applications.

  16. Density driven structural transformations in amorphous semiconductor clathrates

    SciTech Connect

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with the consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.

  17. Density driven structural transformations in amorphous semiconductor clathrates

    DOE PAGES

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; ...

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with themore » consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.« less

  18. Doped semiconductor nanocrystal based fluorescent cellular imaging probes

    NASA Astrophysics Data System (ADS)

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, Sk; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R.

    2013-05-01

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity. Electronic supplementary information available: Characterization details of coating and

  19. Doped semiconductor nanocrystal based fluorescent cellular imaging probes.

    PubMed

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, S K; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R

    2013-06-21

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.

  20. Anomalous hopping conduction in nanocrystalline/amorphous composites and amorphous semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Kakalios, James; Bodurtha, Kent

    Composite nanostructured materials consisting of nanocrystals (nc) embedded within a thin film amorphous matrix can exhibit novel opto-electronic properties. Composite films are synthesized in a dual-chamber co-deposition PECVD system capable of producing nanocrystals of material A and embedding then within a thin film matrix of material B. Electronic conduction in composite thin films of hydrogenated amorphous silicon (a-Si:H) containing nc-germanium or nc-silicon inclusions, as well as in undoped a-Si:H, does not follow an Arrhenius temperature dependence, but rather is better described by an anomalous hopping expression (exp[-(To/T)3/4) , as determined from the ``reduced activation energy'' proposed by Zabrodskii and Shlimak. This temperature dependence has been observed in other thin film resistive materials, such as ultra-thin disordered films of Ag, Bi, Pb and Pd; carbon-black polymer composites; and weakly coupled Au and ZnO quantum dot arrays. There is presently no accepted theoretical understanding of this expression. The concept of a mobility edge, accepted for over four decades, appears to not be necessary to account for charge transport in amorphous semiconductors. Supported by NSF-DMR and the Minnesota Nano Center.

  1. Hybrid photovoltaics based on semiconductor nanocrystals and amorphous silicon.

    PubMed

    Sun, Baoquan; Findikoglu, Alp T; Sykora, Milan; Werder, Donald J; Klimov, Victor I

    2009-03-01

    Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and, perhaps, increased conversion efficiency in the ultraviolet region through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC energy states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared region. The hybrid silicon/PbS NC solar cells show external quantum efficiencies of approximately 7% at infrared energies and 50% in the visible and a power conversion efficiency of up to 0.9%. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs.

  2. Bi-Se doped with Cu, p-type semiconductor

    DOEpatents

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  3. Comment on ``Electron drift mobility in doped amorphous silicon''

    NASA Astrophysics Data System (ADS)

    Overhof, H.; Silver, M.

    1989-05-01

    Experimental drift-mobility data obtained by different methods in doped amorphous silicon are compared. It is shown that the presence of a long-range random potential will lead to a modification of the drift mobility in one experiment while the corresponding values in other experiments are virtually unaffected. It is shown that this effect accounts for the apparent discrepancy between the results of these experiments rather than the shift of the mobility edge upon doping which was recently proposed by Street, Kakalios, and Hack [Phys. Rev. B 38, 5603 (1988)] in order to understand their data.

  4. Realistic modeling of the electronic properties of doped amorphous silicon

    SciTech Connect

    Hack, M.; Street, R.A.

    1988-09-19

    In this letter we describe a fundamental approach to calculating the electronic properties of doped amorphous silicon which takes into account the thermal history of the material. Above the equilibrium temperature, the material is in a thermodynamically stable state, and this is derived by minimizing the free energy using a simple density of states model. The calculations are based on the defect compensation model of doping, introducing distributions of formation energies for neutral dangling bonds and fourfold dopant atoms while preserving charge neutrality. Our results are in good agreement with experimental data providing a realistic model for use in device simulation programs.

  5. Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

    NASA Astrophysics Data System (ADS)

    Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

    2017-02-01

    Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

  6. Sputtered pin amorphous silicon semi-conductor device and method therefor

    DOEpatents

    Moustakas, Theodore D.; Friedman, Robert A.

    1983-11-22

    A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

  7. Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

    SciTech Connect

    Gao, Jian; Kim, Young Duck; Liang, Liangbo; Idrobo, Juan Carlos; Chow, Phil; Tan, Jiawei; Li, Baichang; Li, Lu; Sumpter, Bobby G.; Lu, Toh-Ming; Meunier, Vincent; Hone, James; Koratkar, Nikhil

    2016-09-20

    Semiconductor impurity doping has enabled an entire generation of technology. The emergence of alternative semiconductor material systems, such as transition metal dichalcogenides (TMDCs), requires the development of scalable doping strategies. We report an unprecedented one-pot synthesis for transition-metal substitution in large-area, synthetic monolayer TMDCs. Electron microscopy, optical and electronic transport characterization and ab initio calculations indicate that our doping strategy preserves the attractive qualities of TMDC monolayers, including semiconducting transport and strong direct-gap luminescence. These results are expected to encourage exploration of transition-metal substitution in two-dimensional systems, potentially enabling next-generation optoelectronic technology in the atomically-thin regime.

  8. Properties of nitrogen-doped amorphous hydrogenated carbon films

    SciTech Connect

    Amir, O.; Kalish, R. )

    1991-11-01

    Nitrogen-containing hydrogenated amorphous carbon (a-C:H(N)) films are grown from a dc plasma of a N{sub 2}+C{sub 6}H{sub 6} gas mixture. By varying the N{sub 2} fraction in this mixture films with different amounts of N are produced. The actual amount of nitrogen in the {ital a}-C:H(N) films is determined by nuclear reaction analysis and by Auger electron spectroscopy profiling. The nitrogen concentration in the films grows exponentially with nitrogen content in the gas mixture reaching concentrations as high as 10 at.% for the films grown from a N{sub 2}-rich gas mixture (N{sub 2}/(N{sub 2}+C{sub 6}H{sub 6})=0.75). The electrical and structural properties of the N{sub 2}-doped films are studied by performing electrical conductivity, thermopower (TP), optical absorption, and electron-paramagnetic resonance measurements. Films with low ({lt}1 at.%) nitrogen content exhibit fairly high resistivities, have an optical gap of 1 eV, are rich with dangling bonds (5{times}10{sup 20} cm{sup {minus}3}) and their thermopower is positive and in the mV/K regime, indicating conductivity in the valence band tail. However, with increased N doping, the resistivity decreases and the optical band gap shrinks and reached zero for the highest doped film. The TPs for films containing more than 1 at.% are in the {mu}V/K range, indicating hopping conductivity around the Fermi level. The results of all measurements are consistent with the model of Robertson for the electrical structure of amorphous hydrogenated carbon and for the proposed doping mechanism in this material.

  9. Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers

    SciTech Connect

    Engel, Jesse H.; Surendranath, Yogesh; Alivisatos, Paul

    2013-07-20

    Semiconductor nanocrystal solids are attractive materials for active layers in next-generation optoelectronic devices; however, their efficient implementation has been impeded by the lack of precise control over dopant concentrations. Herein we demonstrate a chemical strategy for the controlled doping of nanocrystal solids under equilibrium conditions. Exposing lead selenide nanocrystal thin films to solutions containing varying proportions of decamethylferrocene and decamethylferrocenium incrementally and reversibly increased the carrier concentration in the solid by 2 orders of magnitude from their native values. This application of redox buffers for controlled doping provides a new method for the precise control of the majority carrier concentration in porous semiconductor thin films.

  10. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    DOEpatents

    Ren, Zhifeng; Chen, Gang; Poudel, Bed; Kumar, Shankar; Wang, Wenzhong; Dresselhaus, Mildred

    2009-09-08

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  11. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    NASA Technical Reports Server (NTRS)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2009-01-01

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  12. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    SciTech Connect

    Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Barbolla, J.; Srinivasan, M.P.

    2005-08-15

    We introduce a model for damage accumulation up to amorphization, based on the ion-implant damage structures commonly known as amorphous pockets. The model is able to reproduce the silicon amorphous-crystalline transition temperature for C, Si, and Ge ion implants. Its use as an analysis tool reveals an unexpected bimodal distribution of the defect population around a characteristic size, which is larger for heavier ions. The defect population is split in both size and composition, with small, pure interstitial and vacancy clusters below the characteristic size, and amorphous pockets with a balanced mixture of interstitials and vacancies beyond that size.

  13. Mechanism for Increasing Dopant Incorporation in Semiconductors Via Doped Nanostructures

    SciTech Connect

    Kuskovsky,I.; Gu, Y.; Gong, Y.; Yan, H.; Lau, J.; Noyan, I.; Neumark, G.; Maksimov, O.; Zhou, X.; et al.

    2006-01-01

    A long-standing problem for ZnSe (and related alloys) has been to obtain good p-type doping. Recent work has given about an order-of-magnitude improvement in such doping by use of Te as a 'codopant' to facilitate the introduction of an acceptor dopant (N), since it is known that p-ZnTe can be obtained quite readily; the Te was introduced in submonolayer quantities via planar ({delta}) doping during molecular beam epitaxy. Here, we examine the mechanism of this improved doping. We show that it resides in the formation of ZnTe-rich nanoislands, with the N embedded in these. This result is obtained by studies involving transmission electron microscopy, high-resolution x-ray diffraction, secondary-ion mass spectroscopy, and temperature quenching of photoluminescence. We note that these nanoislands appear quite unique, in providing doping of semiconductors, and thus are of great interest of their own.

  14. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  15. Photoluminescence in erbium doped amorphous silicon oxycarbide thin films

    NASA Astrophysics Data System (ADS)

    Gallis, Spyros; Huang, Mengbing; Efstathiadis, Harry; Eisenbraun, Eric; Kaloyeros, Alain E.; Nyein, Ei Ei; Hommerich, Uwe

    2005-08-01

    Photoluminescence (PL) in Er-doped amorphous silicon oxycarbide (a-SiCxOy:Er) thin films, synthesized via thermal chemical vapor deposition, was investigated for carbon and oxygen concentrations in the range of 0-1.63. Intense room-temperature PL was observed at 1540 nm, with the PL intensity being dependent on the carbon and oxygen content. The strongest PL intensity was detected for a-SiC0.53O0.99:Er when pumped at 496.5 nm, with ˜20 times intensity enhancement as compared to a-SiO2:Er. Broadband excitation in the visible was observed for a-SiC0.53O0.99:Er. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy analyses suggest that the formation of Si-C-O networks plays an important role in enhancing the Er optical activity in a-SiCxOy:Er films.

  16. Hybrid method of making an amorphous silicon P-I-N semiconductor device

    DOEpatents

    Moustakas, Theodore D.; Morel, Don L.; Abeles, Benjamin

    1983-10-04

    The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

  17. FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)

    SciTech Connect

    Johnson, Bradley R.; Riley, Brian J.; Crum, Jarrod V.; Sundaram, S. K.; Henager, Charles H.; Zhang, Yanwen; Shutthanandan, V.

    2007-01-01

    We describe progress in the development of new materials for portable, room-temperature, gamma-radiation detection at Pacific Northwest National Laboratory at the Hanford Site in Washington State. High Z, high resistivity, amorphous semiconductors are being designed for use as solid-state detectors at near ambient temperatures; principles of operation are analogous to single-crystal semiconducting detectors. Amorphous semiconductors have both advantages and disadvantages compared to single crystals, and this project is developing methods to mitigate technical problems and design optimized material for gamma detection. Several issues involved in the fabrication of amorphous semiconductors are described, including reaction thermodynamics and kinetics, the development of pyrolytic coating, and the synthesis of ingots. The characterization of amorphous semiconductors is described, including sectioning and polishing protocols, optical microscopy, X-ray diffraction, scanning electron microscopy, optical spectroscopy, particle-induced X-ram emission, Rutherford backscattering, and electrical testing. Then collaboration with the University of Illinois at Urbana-Champaign is discussed in the areas of Hall-effect measurements and current voltage data. Finally, we discuss the strategy for continuing the program.

  18. Review paper: Transparent amorphous oxide semiconductor thin film transistor

    NASA Astrophysics Data System (ADS)

    Kwon, Jang-Yeon; Lee, Do-Joong; Kim, Ki-Bum

    2011-03-01

    Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last few years, especially for large area electronic applications, such as high resolution active matrix liquid crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs), because of their high electron mobility and spatial uniform property. This paper reviews and summarizes recent emerging reports that include potential applications, oxide semiconductor materials, and the impact of the fabrication process on electrical performance. We also address the stability behavior of such devices under bias/illumination stress and critical factors related to reliability, such as the gate insulator, the ambient and the device structure.

  19. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  20. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  1. Transport in two-dimensional modulation-doped semiconductor structures

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.; Kodiyalam, S.; Pfeiffer, L. N.; West, K. W.

    2015-05-01

    We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants, which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first-order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultrahigh-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultrapure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the doping layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-doping growth conditions.

  2. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  3. Amorphous Semiconductor Nanowires Created by Site-Specific Heteroatom Substitution with Significantly Enhanced Photoelectrochemical Performance.

    PubMed

    He, Ting; Zu, Lianhai; Zhang, Yan; Mao, Chengliang; Xu, Xiaoxiang; Yang, Jinhu; Yang, Shihe

    2016-08-23

    Semiconductor nanowires that have been extensively studied are typically in a crystalline phase. Much less studied are amorphous semiconductor nanowires due to the difficulty for their synthesis, despite a set of characteristics desirable for photoelectric devices, such as higher surface area, higher surface activity, and higher light harvesting. In this work of combined experiment and computation, taking Zn2GeO4 (ZGO) as an example, we propose a site-specific heteroatom substitution strategy through a solution-phase ions-alternative-deposition route to prepare amorphous/crystalline Si-incorporated ZGO nanowires with tunable band structures. The substitution of Si atoms for the Zn or Ge atoms distorts the bonding network to a different extent, leading to the formation of amorphous Zn1.7Si0.3GeO4 (ZSGO) or crystalline Zn2(GeO4)0.88(SiO4)0.12 (ZGSO) nanowires, respectively, with different bandgaps. The amorphous ZSGO nanowire arrays exhibit significantly enhanced performance in photoelectrochemical water splitting, such as higher and more stable photocurrent, and faster photoresponse and recovery, relative to crystalline ZGSO and ZGO nanowires in this work, as well as ZGO photocatalysts reported previously. The remarkable performance highlights the advantages of the ZSGO amorphous nanowires for photoelectric devices, such as higher light harvesting capability, faster charge separation, lower charge recombination, and higher surface catalytic activity.

  4. Properties of infrared doped semiconductor Mie resonators (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Lewi, Tomer; Iyer, Prasad P.; Butakov, Nikita A.; Schuller, Jon A.

    2015-09-01

    Dielectric optical antenna resonators have recently emerged as a viable alternative to plasmonic resonators for metamaterials and nanophotonic devices, due to their ability to support multipolar Mie resonances with low losses. In this work, we experimentally investigate the mid-infrared Mie resonances in Si and Ge subwavelength spherical particles. In particular, we leverage the electronic and optical properties of these semiconductors in the mid-infrared range to design and tune Mie resonators through free-carrier refraction. Si and Ge semiconductor spheres of varying sizes of 0.5-4 μm were fabricated using femtosecond laser ablation. Using single particle infrared spectroscopy, we first demonstrate size-dependent Si and Ge Mie resonances spanning the entire mid-infrared (2-16 μm) spectral range. Subsequently we show that the Mie resonances can be tuned by varying material properties rather than size or geometry. We experimentally demonstrate doping-dependent resonance frequency shifts that follow simple Drude models of free-carrier refraction. We show that Ge particles exhibit a stronger doping dependence than Si due to the smaller effective mass of the free carriers. Using the unique size and doping dispersion of the electric and magnetic dipole modes, we identify and demonstrate a size regime where these modes are spectrally overlapping. We also demonstrate the emergence of plasmonic resonances for high doping levels and long wavelengths. These findings demonstrate the potential for tuning infrared semiconductor Mie resonances by optically or electrically modulating charge carrier densities, thus providing an excellent platform for tunable electromagnetic metamaterials.

  5. Generalization of Weber's adiabatic bond charge model to amorphous group IV semiconductors

    NASA Astrophysics Data System (ADS)

    Winer, K.; Wooten, F.

    1984-11-01

    The generalization of Weber's adiabatic bond charge model to amorphous group IV semiconductors is described. Methods of relaxing the coordinates to their equilibrium configuration and of calculating the dynamical matrix for the phonon spectra are given. Particular emphasis is given to the optimization of the Coulomb subroutines required in this model. Estimates of computation time are included for the calculation of equilibrium configuration on a Cray computer.

  6. Fabrication of Si-As-Te ternary amorphous semiconductor in the microgravity environment (M-13)

    NASA Technical Reports Server (NTRS)

    Hamakawa, Yoshihiro

    1993-01-01

    Ternary chalcogenide Si-As-Te system is an interesting semiconductor from the aspect of both basic physics and technological applications. Since a Si-As-Te system consists of a IV-III-II hedral bonding network, it has a very large glass forming region with a wide physical constant controllability. For example, its energy gap can be controlled in a range from 0.6 eV to 2.5 eV, which corresponds to the classical semiconductor Ge (0.66 eV), Si (1.10 eV), GaAs (1.43 eV), and GaP (2.25 eV). This fact indicates that it would be a suitable system to investigate the compositional dependence of the atomic and electronic properties in the random network of solids. In spite of these significant advantages in the Si-As-Te amorphous system, a big barrier impending the wide utilization of this material is the huge difficulty encountered in the material preparation which results from large differences in the weight density, melting point, and vapor pressure of individual elements used for the alloying composition. The objective of the FMPT/M13 experiment is to fabricate homogeneous multi-component amorphous semiconductors in the microgravity environment of space, and to make a series of comparative characterizations of the amorphous structures and their basic physical constants on the materials prepared both in space and in normal terrestrial gravity.

  7. Length mismatch in random semiconductor alloys. III. Crystalline and amorphous SiGe

    NASA Astrophysics Data System (ADS)

    Mousseau, Normand; Thorpe, M. F.

    1992-12-01

    In the third paper of this series on the length mismatch problem, we study binary semiconductor alloys in both their crystalline and amorphous forms. We have concentratred on SiGe alloys. Applying the theory developed in paper I, we obtain the mean length for both nearest and next-nearest neighbors as well as the nearest-neighbor length distribution for the crystalline alloy. We show that the theoretical results fall within the limits set by experiment. We check our analytical results against computer simulations. We examine the effect of amorphization on the internal strain, using the Wooten, Winer, and Weaire model, and find that the disorders due to the length mismatch and due to amorphization decouple.

  8. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  9. N-doping of organic semiconductors by bis-metallosandwich compounds

    SciTech Connect

    Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang Bok; Mohapatra, Swagat K.; Guo, Song

    2016-01-05

    The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

  10. Optimal doping control of magnetic semiconductors via subsurfactant epitaxy

    SciTech Connect

    Zeng, Changgan; Zhang, Zhenyu; van Benthem, Klaus; Chisholm, Matthew F; Weitering, Harm H

    2008-02-01

    Dilute magnetic semiconductors (DMS) with high ferromagnetic ordering temperatures (T{sub c}) have vast potential for advancing spin-based electronics or 'spintronics'. To date, achieving high-T{sub c} DMS typically required doping levels of order 5%. Such high doping levels inevitably compromise the structural homogeneity and carrier mobility of the DMS. Here, we establish 'subsurfactant epitaxy' as a novel kinetic pathway for synthesizing Mn-doped germanium with T{sub c} much higher than room temperature, at dramatically reduced doping levels. This is accomplished by optimal control of the diffusion kinetics of the dopant atoms near the growth front in two separate deposition steps. The first involves a submonolayer dose of Mn on Ge(100) at low temperature, which populates subsurface interstitial sites with Mn while suppressing lateral Mn diffusion and clustering. The second step involves epitaxial growth of Ge at elevated temperature, taking advantage of the strong floating ability of the interstitial Mn dopants towards the newly defined subsurface sites at the growth front. Most remarkably, the Mn dopants trapped inside the film are uniformly distributed at substitutional sites, and the resulting film exhibits ferromagnetism above 400 K at the nominal doping level of only 0.2%.

  11. Synthesis of Doped Semiconductor Nanocrystals and Conductive Coatings

    NASA Astrophysics Data System (ADS)

    Wills, Andrew Wilke

    Semiconductor nanocrystals are an intriguing class of materials because of their size-tunable properties. This makes them promising for future optoelectronic devices such as solar cells and light emitting diodes. Realization of these devices, however, requires precise control of the flow of electricity through the particles. In bulk semiconductors, this is achieved by using materials with few unintentional defects, then intentionally adding particular defects or dopants to alter the semiconductor's electronic properties. In contrast, the addition of electrically active dopants has scarcely been demonstrated in semiconductor nanocrystals, and charge transport is hindered by the barrier of electron hopping between particles. The goal of this thesis, therefore, is to discover new methods to control charge transport in nanocrystals. It divides into three major thrusts: 1) the investigation of the doping process in semiconductor nanocrystals, 2) the invention of new synthetic methods to incorporate electrically active dopants into semiconductor nanocrystals, and 3) the invention of a new nanocrystal surface coating that aids processing of nanocrystals into devices but can be removed to enhance charge transport between particles. The first objective is achieved by the comparison of four different precursors that have been used to dope Mn into nanocrystals. Experiments show that dimethylmanganese incorporates efficiently into ZnSe nanocrystals while other precursors are less efficient and sometimes lower the quality of the nanocrystals produced. The second goal is met by the application of a core-shell synthetic strategy to the incorporation of non-isovalent impurities (Al and In) into CdSe nanocrystals. By separating the three steps of nucleation, dopant binding, and growth, each step can be optimized so that doping is achieved and high quality particles are produced. Detailed characterization shows dopant incorporation and local environment, while transistor

  12. Tuning the dielectric properties of organic semiconductors via salt doping.

    PubMed

    Liu, Xien; Jeong, Kwang S; Williams, Bryan P; Vakhshouri, Kiarash; Guo, Changhe; Han, Kuo; Gomez, Enrique D; Wang, Qing; Asbury, John B

    2013-12-12

    Enhancing the dielectric permittivity of organic semiconductors may open new opportunities to control charge generation and recombination dynamics in organic solar cells. The potential to tune the dielectric permittivity of organic semiconductors by doping them with redox inactive salts was explored using a combination of organic synthesis, electrical characterization, and time-resolved infrared spectroscopy. The addition of the salt, LiTFSI (lithium bis(trifluoro-methyl-sulfonyl)imide), to a conjugated polymer specifically designed to incorporate ions into its bulk phase increased the density of holes and enhanced the static dielectric permittivity of the polymer blend by more than an order of magnitude. The frequency and phase dependence of the real dielectric function demonstrates that the increase in dielectric permittivity resulted from dipolar motion of bound ion pairs or clusters of ions. Interestingly, the increases in the hole density and dielectric permittivity were associated with enhancement of the hole mobility by 2 orders of magnitude relative to the undoped polymer. The charge recombination lifetime also increased by an order of magnitude in the blend with a fullerene electron acceptor when ions were added to the polymer. The findings indicate that ion doping enables organic semiconductors with large increases in low frequency dielectric permittivity and that these changes result in improved charge transport and suppressed charge recombination on the microsecond time scale.

  13. Fabrication process development for high-purity germanium radiation detectors with amorphous semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Looker, Quinn

    High-purity germanium (HPGe) radiation detectors are well established as a valuable tool in nuclear science, astrophysics, and nuclear security applications. HPGe detectors excel in gamma-ray spectroscopy, offering excellent energy resolution with large detector sizes for high radiation detection efficiency. Although a robust fabrication process has been developed, improvement is needed, especially in developing electrical contact and surface passivation technology for position-sensitive detectors. A systematic study is needed to understand how the detector fabrication process impacts detector performance and reliability. In order to provide position sensitivity, the electrical contacts are segmented to form multiple electrodes. This segmentation creates new challenges in the fabrication process and warrants consideration of additional detector effects related to the segmentation. A key area of development is the creation of the electrical contacts in a way that enables reliable operation, provides low electronic noise, and allows fine segmentation of electrodes, giving position sensitivity for radiation interactions in the detector. Amorphous semiconductor contacts have great potential to facilitate new HPGe detector designs by providing a thin, high-resistivity surface coating that is the basis for electrical contacts that block both electrons and holes and can easily be finely segmented. Additionally, amorphous semiconductor coatings form a suitable passivation layer to protect the HPGe crystal surface from contamination. This versatility allows a simple fabrication process for fully passivated, finely segmented detectors. However, the fabrication process for detectors with amorphous semiconductors is not as highly developed as for conventional technologies. The amorphous semiconductor layer properties can vary widely based on how they are created and these can translate into varying performance of HPGe detectors with these contacts. Some key challenges include

  14. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-07

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

  15. Super-Resolution Effect of Semiconductor-Doped Glass

    NASA Astrophysics Data System (ADS)

    Nagase, Toshihiko; Ashida, Sumio; KatsutaroIchihara, KatsutaroIchihara

    1999-03-01

    Semiconductor-doped glass is proposed as a super-resolution layer for future ultra-high-density optical disc systems. It was confirmed that this material system showed very fast response and large transmittance change by laser-beam irradiation when CdSSe-doped glass was used. The rise time of the transmittance change was less than 10 ns and the transmittance change reached 30%. These optical responses were obtained at a power density of the pumped laser beam of 1 MW/cm2. This power density corresponds to the readout power in digital versatile disk-read onlymemory (DVD-ROM) and digital versatile disk-random access memory (DVD-RAM) discs. This material system is regarded as a potential candidate for a super-resolution readout layer that is applicable to both ROM and RAM discs.

  16. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOEpatents

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  17. Effect of ultraviolet light exposure to boron doped hydrogenated amorphous silicon oxide thin film

    NASA Astrophysics Data System (ADS)

    Baek, Seungsin; Iftiquar, S. M.; Jang, Juyeon; Lee, Sunhwa; Kim, Minbum; Jung, Junhee; Park, Hyeongsik; Park, Jinjoo; Kim, Youngkuk; Shin, Chonghoon; Lee, Youn-Jung; Yi, Junsin

    2012-11-01

    We have investigated the effect of ultraviolet (UV) light exposure to boron doped (p-type) hydrogenated amorphous silicon oxide (p-a-SiO:H) thin semiconductor films by measuring changes in its structural, electrical and optical properties. After a 50 h of UV light soaking (LS) of the films, that have 1.2, 6.9, 15.2, 25.3 at.% oxygen content (C(O)) and optical gap (E04) of 1.897, 2.080, 2.146 and 2.033 eV, show a relative increase in the C(O) by 28.0%, 9.8%, 2.0%, 3.1%, a relative increase in the Urbach energy (Eu) by 42%, 24%, 8%, 0%, decrease in the E04 by 66, 2, 12, 19 meV and the gap state defect density (Nd) show an increase by 6.5%, 3.4%, 0.7%, 0.1%. At higher oxygen content the observed UV light induced degradation (LID) is relatively less than that for films with lower oxygen content, indicating that higher oxides face less changes under the UV light.

  18. Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen

    DOEpatents

    Compaan, Alvin D.; Price, Kent J.; Ma, Xianda; Makhratchev, Konstantin

    2005-02-08

    A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.

  19. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

    DOE PAGES

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

    2016-02-09

    To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

  20. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

    SciTech Connect

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Ovchinnikova, Olga S.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

    2016-02-09

    To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.

  1. Noncrystalline Semiconductors: Electrical and Thermal Processes.

    DTIC Science & Technology

    solids, Tin compounds, Cobalt compounds, Iron oxides, Titanium oxides, Chromium compounds, Manganese compounds, Zinc compounds, Vanadium compounds, Sputtering, Thin films ...Semiconducting films , *Switching, Amorphous materials, Electrical conductivity, Optical properties, Oxides, Semiconductor doping, Band theory of

  2. Accurate calculation of field and carrier distributions in doped semiconductors

    NASA Astrophysics Data System (ADS)

    Yang, Wenji; Tang, Jianping; Yu, Hongchun; Wang, Yanguo

    2012-06-01

    We use the numerical squeezing algorithm(NSA) combined with the shooting method to accurately calculate the built-in fields and carrier distributions in doped silicon films (SFs) in the micron and sub-micron thickness range and results are presented in graphical form for variety of doping profiles under different boundary conditions. As a complementary approach, we also present the methods and the results of the inverse problem (IVP) - finding out the doping profile in the SFs for given field distribution. The solution of the IVP provides us the approach to arbitrarily design field distribution in SFs - which is very important for low dimensional (LD) systems and device designing. Further more, the solution of the IVP is both direct and much easy for all the one-, two-, and three-dimensional semiconductor systems. With current efforts focused on the LD physics, knowing of the field and carrier distribution details in the LD systems will facilitate further researches on other aspects and hence the current work provides a platform for those researches.

  3. Multiscale approach to the electronic structure of doped semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Sinai, Ofer; Hofmann, Oliver T.; Rinke, Patrick; Scheffler, Matthias; Heimel, Georg; Kronik, Leeor

    2015-02-01

    The inclusion of the global effects of semiconductor doping poses a unique challenge for first-principles simulations, because the typically low concentration of dopants renders an explicit treatment intractable. Furthermore, the width of the space-charge region (SCR) at charged surfaces often exceeds realistic supercell dimensions. Here, we present a multiscale technique that fully addresses these difficulties. It is based on the introduction of a charged sheet, mimicking the SCR-related field, along with free charge which mimics the bulk charge reservoir, such that the system is neutral overall. These augment a slab comprising "pseudoatoms" possessing a fractional nuclear charge matching the bulk doping concentration. Self-consistency is reached by imposing charge conservation and Fermi level equilibration between the bulk, treated semiclassically, and the electronic states of the slab, which are treated quantum-mechanically. The method, called CREST—the charge-reservoir electrostatic sheet technique—can be used with standard electronic structure codes. We validate CREST using a simple tight-binding model, which allows for comparison of its results with calculations encompassing the full SCR explicitly. Specifically, we show that CREST successfully predicts scenarios spanning the range from no to full Fermi level pinning. We then employ it with density functional theory, obtaining insight into the doping dependence of the electronic structures of the metallic "clean-cleaved" Si(111) surface and its semiconducting (2 ×1 ) reconstructions.

  4. Electrochemical preparation of lead-doped amorphous Se films and underpotential deposition of lead onto these films

    NASA Astrophysics Data System (ADS)

    Ivanov, Dmitry K.; Osipovich, Nikolay P.; Poznyak, Sergey K.; Streltsov, Eugene A.

    2003-06-01

    The process of the underpotential deposition (UPD) of Pb adatoms (Pb ad) onto Se was used to produce nanocomposite films consisting of amorphous Se and nanosized PbSe clusters distributed throughout the film bulk. It was found that doping lead into Se films modifies their optical and photoelectrochemical properties and increases the efficiency of the charge transfer both in the film bulk and through the semiconductor | electrolyte interface. Introducing lead into the bulk of Se films significantly promotes the process of Pb ad UPD onto Se surface. The underpotentially deposited Pb ad interact chemically with Se surface atoms, resulting in the formation of a PbSe monolayer. The PbSe formed can be identified by the anodic peak corresponding to its electrochemical oxidation.

  5. Statistical Origin of the Meyer-Neldel Rule in Amorphous Semiconductor Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Kikuchi, Minoru

    1990-09-01

    The origin of the Meyer-Neldel (MN) rule [G0{\\propto}\\exp (AEσ)] in the dc conductance of amorphous semiconductor thin-film transistors (TFT) is investigated based on the statistical model. We analyzed the temperature derivative of the band bending energy eVs(T) at the semiconductor interface as a function of Vs. It is shown that the condition for the validity of the rule, i.e., the linearity of the derivative deVs/dkT to Vs, certainly holds as a natural consequence of the interplay between the steep tail states and the low gap density of states spectrum. An expression is derived which relates the parameter A in the rule to the gap states spectrum. Model calculations show a magnitude of A in fair agreement with the experimental observations. The effects of the Fermi level position and the magnitude of the midgap density of states are also discussed.

  6. Coating of calcia-doped ceria with amorphous silica shell by seeded polymerization technique

    SciTech Connect

    El-Toni, Ahmed Mohamed . E-mail: el-toni@mail.tagen.tohoku.ac.jp; Yin, Shu; Yabe, Shinryo; Sato, Tsugio

    2005-07-12

    Calcia-doped ceria is of potential interest as an ultraviolet (UV) radiation blocking material in personal care products. However, its high catalytic ability for oxidation of organic materials makes it difficult to use as a sunscreen material. Therefore, calcia-doped ceria was coated with amorphous silica by means of seeded polymerization technique in order to depress its oxidation catalytic ability. The catalytic ability as well as UV-shielding ability was investigated for coated particles.

  7. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  8. Comparison between highly doped semiconductor and metal infrared antenna

    NASA Astrophysics Data System (ADS)

    Yang, Yanxiang; Lai, Jianjun; Li, Hongwei; Chen, Changhong

    2015-10-01

    Optical antenna can strongly enhance the interaction of light with matter by their ability to localize electromagnetic fields on nano-metric scale. This allows for the engineering of absorption capabilities to visible and infrared detectors with very small active areas. In this study, we focused on the study of metal and semiconductor infrared antennas for nano-bolometer application. The infrared antennas are applied for increasing the effective absorbing across section, enhancing the field intensity at the gap of the antennas and improving the absorbance of bolometer materials located at the gap. We perform numerical simulation of the characteristics of infrared antennas and analysis the influence of various parameters of antennas (length, wide, and material types) and optimized these parameters to achieve the maximum field enhancement for an optical antenna. We also highlight the comparisons of field enhancement of infrared antenna materials between metal and highly doped semiconductor and discuss some practical issues related to the application of infrared antenna for infrared detectors.

  9. Tellurium doping effect in avalanche-mode amorphous selenium photoconductive film

    NASA Astrophysics Data System (ADS)

    Park, Wug-Dong; Tanioka, Kenkichi

    2014-11-01

    Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a long wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.

  10. Tellurium doping effect in avalanche-mode amorphous selenium photoconductive film

    SciTech Connect

    Park, Wug-Dong; Tanioka, Kenkichi

    2014-11-10

    Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a long wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.

  11. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  12. Lag and light-transfer characteristics of amorphous selenium photoconductive film with tellurium-doped layer

    NASA Astrophysics Data System (ADS)

    Park, Wug-Dong; Tanioka, Kenkichi

    2016-07-01

    Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) films have been used for highly sensitive imaging devices. To study a-Se HARP films for a solid-state image sensor, current-voltage, lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films are investigated. Also, to clarify a suitable Te-doped a-Se layer thickness in the a-Se photoconductor, we considered the effects of Te-doped layer thickness on the lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films. The threshold field, at which avalanche multiplication occurs in the a-Se HARP targets, decreases when the Te-doped layer thickness increases. The lag of 0.4-µm-thick a-Se HARP targets with Te-doped layers is higher than that of the target without Te doping. The lag of the targets with Te-doped layers is caused by the electrons trapped in the Te-doped layers within the 0.4-µm-thick a-Se HARP films. From the results of the spectral response measurement of about 15 min, the 0.4-µm-thick a-Se HARP targets with Te-doped layers of 90 and 120 nm are observed to be unstable owing to the electrons trapped in the Te-doped a-Se layer. From the light-transfer characteristics of 0.4-µm-thick a-Se HARP targets, as the slope at the operating point of signal current-voltage characteristics in the avalanche mode increases, the γ of the a-Se HARP targets decreases. Considering the effects of dark current on the lag and spectral response characteristics, a Te-doped layer of 60 nm is suitable for 0.4-µm-thick a-Se HARP films.

  13. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.

    PubMed

    Simon, John; Protasenko, Vladimir; Lian, Chuanxin; Xing, Huili; Jena, Debdeep

    2010-01-01

    Impurity-based p-type doping in wide-band-gap semiconductors is inefficient at room temperature for applications such as lasers because the positive-charge carriers (holes) have a large thermal activation energy. We demonstrate high-efficiency p-type doping by ionizing acceptor dopants using the built-in electronic polarization in bulk uniaxial semiconductor crystals. Because the mobile hole gases are field-ionized, they are robust to thermal freezeout effects and lead to major improvements in p-type electrical conductivity. The new doping technique results in improved optical emission efficiency in prototype ultraviolet light-emitting-diode structures. Polarization-induced doping provides an attractive solution to both p- and n-type doping problems in wide-band-gap semiconductors and offers an unconventional path for the development of solid-state deep-ultraviolet optoelectronic devices and wide-band-gap bipolar electronic devices of the future.

  14. Compositions of doped, co-doped and tri-doped semiconductor materials

    DOEpatents

    Lynn, Kelvin [Pullman, WA; Jones, Kelly [Colfax, WA; Ciampi, Guido [Watertown, MA

    2011-12-06

    Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

  15. Controlling the stoichiometry and doping of semiconductor materials

    DOEpatents

    Albin, David; Burst, James; Metzger, Wyatt; Duenow, Joel; Farrell, Stuart; Colegrove, Eric

    2016-08-16

    Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

  16. Carbon doping of III-V compound semiconductors

    SciTech Connect

    Moll, Amy Jo

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 1014/cm2. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  17. Direct growth of single-crystalline III–V semiconductors on amorphous substrates

    PubMed Central

    Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M.; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager III, Joel W.; Chrzan, Daryl C.; Javey, Ali

    2016-01-01

    The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III–V's on application-specific substrates by direct growth. PMID:26813257

  18. Direct growth of single-crystalline III–V semiconductors on amorphous substrates

    DOE PAGES

    Chen, Kevin; Kapadia, Rehan; Harker, Audrey; ...

    2016-01-27

    The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V’s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V’s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. Themore » patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. In conclusion, the work presents an important advance towards universal integration of III–V’s on application-specific substrates by direct growth.« less

  19. Energy-dependent relaxation time in quaternary amorphous oxide semiconductors probed by gated Hall effect measurements

    NASA Astrophysics Data System (ADS)

    Socratous, Josephine; Watanabe, Shun; Banger, Kulbinder K.; Warwick, Christopher N.; Branquinho, Rita; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Sirringhaus, Henning

    2017-01-01

    Despite the success of exploiting the properties of amorphous oxide semiconductors for device applications, the charge transport in these materials is still not clearly understood. The observation of a definite Hall voltage suggests that electron transport in the conduction band is free-electron-like. However, the temperature dependence of the Hall and field-effect mobilities cannot be explained using a simple bandlike model. Here, we perform gated Hall effect measurements in field-effect transistors, which allow us to make two independent estimates of the charge carrier concentration and determine the Hall factor providing information on the energy dependence of the relaxation time. We demonstrate that the Hall factor in a range of sputtered and solution-processed quaternary amorphous oxides, such as a-InGaZnO, is close to two, while in ternary oxides, such as InZnO, it is near unity. This suggests that quaternary elements like Ga act as strong ionized impurity scattering centers in these materials.

  20. Disentangling neighbors and extended range density oscillations in monatomic amorphous semiconductors.

    PubMed

    Roorda, S; Martin, C; Droui, M; Chicoine, M; Kazimirov, A; Kycia, S

    2012-06-22

    High energy x-ray diffraction measurements of pure amorphous Ge were made and its radial distribution function (RDF) was determined at high resolution, revealing new information on the atomic structure of amorphous semiconductors. Fine structure in the second peak in the RDF provides evidence that a fraction of third neighbors are closer than some second neighbors; taking this into account leads to a narrow distribution of tetrahedral bond angles, (8.5 ± 0.1)°. A small peak which appears near 5 Å upon thermal annealing shows that some ordering in the dihedral bond-angle distribution takes place during structural relaxation. Extended range order is detected (in both a-Ge and a-Si) which persists to beyond 20 Å, and both the periodicity and its decay length increase upon thermal annealing. Previously, the effect of structural relaxation was only detected at intermediate range, involving reduced tetrahedral bond-angle distortions. These results enhance our understanding of the atomic order in continuous random networks and place significantly more stringent requirements on computer models intending to describe these networks, or their alternatives which attempt to describe the structure in terms of an arrangement of paracrystals.

  1. Direct growth of single-crystalline III–V semiconductors on amorphous substrates

    SciTech Connect

    Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M.; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager III, Joel W.; Chrzan, Daryl C.; Javey, Ali

    2016-01-27

    The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V’s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V’s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. In conclusion, the work presents an important advance towards universal integration of III–V’s on application-specific substrates by direct growth.

  2. Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

    SciTech Connect

    Korobova, N. Timoshenkov, S.; Almasov, N.; Prikhodko, O.; Tsendin, K.

    2014-10-21

    Structure of amorphous chalcogenide semiconductor glassy As-S-Se films, obtained by high-frequency (HF) ion-plasma sputtering has been investigated. It was shown that the length of the atomic structure medium order and local structure were different from the films obtained by thermal vacuum evaporation. Temperature dependence of dark conductivity, as well as the dependence of the spectral transmittance has been studied. Conductivity value was determined at room temperature. Energy activation conductivity and films optical band gap have been calculated. Temperature and field dependence of the drift mobility of charge carriers in the HF As-S-Se films have been shown. Bipolarity of charge carriers drift mobility has been confirmed. Absence of deep traps for electrons in the As{sub 40}Se{sub 30}S{sub 30} spectrum of localized states for films obtained by HF plasma ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As{sub 40}Se{sub 30}S{sub 30} films obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

  3. Synthesis and photo-darkening/photo-brightening of blue emitting doped semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sarkar, Suresh; Guria, Amit K.; Patra, Biplab K.; Pradhan, Narayan

    2014-03-01

    By programming the synthetic reaction chemistry, stable blue emitting Cu(i) or Ag(i) doped Al(iii) co-doped ZnS (Al,Cu:ZnS or Al,Ag:ZnS) semiconductor nanocrystals are designed. Further, the photostability of the obtained intense blue-violet emission is studied, and the effects of doping/co-doping are correlated. Finally, it is revealed that the strong binding surface ligand 1-dodecanethiol and Al(iii) co-doping play pivotal roles in achieving such stable blue emitting doped nanocrystals.By programming the synthetic reaction chemistry, stable blue emitting Cu(i) or Ag(i) doped Al(iii) co-doped ZnS (Al,Cu:ZnS or Al,Ag:ZnS) semiconductor nanocrystals are designed. Further, the photostability of the obtained intense blue-violet emission is studied, and the effects of doping/co-doping are correlated. Finally, it is revealed that the strong binding surface ligand 1-dodecanethiol and Al(iii) co-doping play pivotal roles in achieving such stable blue emitting doped nanocrystals. Electronic supplementary information available: Detail of synthesis and supporting figures. See DOI: 10.1039/c3nr06048a

  4. High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

    SciTech Connect

    Ye Yan; Lim, Rodney; White, John M.

    2009-10-01

    Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn{sub 3}N{sub 2}) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm{sup 2} V{sup -1} s{sup -1} for the as-deposited film produced at 50 deg. C and 110 cm{sup 2} V{sup -1} s{sup -1} after annealing at 400 deg. C. In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium-gallium-zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.

  5. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Gelinck, G. H.; van Breemen, A. J. J. M.; Cobb, B.

    2015-03-01

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  6. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    SciTech Connect

    Gelinck, G. H.; Breemen, A. J. J. M. van; Cobb, B.

    2015-03-02

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  7. Photoconductivity studies on amorphous and crystalline TiO2 films doped with gold nanoparticles

    NASA Astrophysics Data System (ADS)

    Valverde-Aguilar, G.; García-Macedo, J. A.; Rentería-Tapia, V.; Aguilar-Franco, M.

    2011-06-01

    In this work, amorphous and crystalline TiO2 films were synthesized by the sol-gel process at room temperature. The TiO2 films were doped with gold nanoparticles. The films were spin-coated on glass wafers. The crystalline samples were annealed at 100°C for 30 minutes and sintered at 520°C for 2 h. All films were characterized using X-ray diffraction, transmission electronic microscopy and UV-Vis absorption spectroscopy. Two crystalline phases, anatase and rutile, were formed in the matrix TiO2 and TiO2/Au. An absorption peak was located at 570 nm (amorphous) and 645 nm (anatase). Photoconductivity studies were performed on these films. The experimental data were fitted with straight lines at darkness and under illumination at 515 nm and 645 nm. This indicates an ohmic behavior. Crystalline TiO2/Au films are more photoconductive than the amorphous ones.

  8. Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

    SciTech Connect

    Xu, L.; Li, Y.; Yu, N. N.; Zhong, Y. P.; Miao, X. S.

    2015-01-19

    We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.

  9. Tin-Doped Inorganic Amorphous Films for Use as Transparent Monolithic Phosphors

    PubMed Central

    Masai, Hirokazu; Miyata, Hiroki; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Kanemitsu, Yoshihiko

    2015-01-01

    Although inorganic crystalline phosphors can exhibit high quantum efficiency, their use in phosphor films has been limited by a reliance on organic binders that have poor durability when exposed to high-power and/or high excitation energy light sources. To address this problem, Sn2+ -doped transparent phosphate films measuring several micrometers in thickness have been successfully prepared through heat treatment and a subsequent single dip-coating process. The resulting monolithic inorganic amorphous film exhibited an internal quantum efficiency of over 60% and can potentially utilize transmitted light. Analysis of the film’s emissivity revealed that its color can be tuned by changing the amount of Mn and Sn added to influence the energy transfer from Sn2+ to Mn2+. It is therefore concluded that amorphous films containing such emission centers can provide a novel and viable alternative to conventional amorphous films containing crystalline phosphors in light-emitting devices. PMID:26061744

  10. Structural analysis of a completely amorphous {sup 238}Pu-doped zircon by neutron diffraction.

    SciTech Connect

    Fortner, J. A.

    1998-12-16

    The structure of a completely amorphous zircon was determined by time-of-flight neutron diffraction at Argonne's Intense Pulsed Neutron Source (IPNS). The sample of metamict zircon (ZrSiO{sub 4}),initially doped to 8.85 weight percent {sup 238}Pi, had been completely amorphized by alpha-recoil damage since its synthesis in 1981 at the Pacific Northwest National Laboratory (PNNL). The measured diffraction structure factor, S(Q), indicated a completely amorphous sample, with no signs of residual zircon microcrystallinity. The pair distribution function obtained indicated that the structure was that of an oxide glass, retaining the Si-0, Zr-0, and O-O bond lengths of crystalline zircon.

  11. Structural analysis of a completely amorphous {sup 238}Pu-doped zircon by neutron diffraction.

    SciTech Connect

    Fortner, J. A.; Badyal, Y.; Price, D. C.; Hanchar, J. M.; Weber, W. J.; Materials Science Division; PNNL

    1999-01-01

    The structure of a completely amorphous zircon was determined by time-of-flight neutron diffraction at Argonne's Intense Pulsed Neutron Source (IPNS). The sample of metamict zircon (ZrSiO{sub 4}), initially doped to 8.85 weight percent {sup 238}Pu, had been completely amorphized by alpha-recoil damage since its synthesis in 1981 at the Pacific Northwest National Laboratory (PNNL). The measured diffraction structure factor, S(Q), indicated a completely amorphous sample, with no signs of residual zircon microcrystallinity. The pair distribution function obtained indicated that the structure was that of an oxide glass, retaining the Si-0, Zr-0, and O-O bond lengths of crystalline zircon.

  12. The microstructures and electrical properties of Y-doped amorphous vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Gu, Deen; Zhou, Xin; Guo, Rui; Wang, Zhihui; Jiang, Yadong

    2017-03-01

    One of promising approaches for further improving the sensitivity of microbolometer arrays with greatly-reduced pixel size is using the thermal-sensitive materials with higher performance. In this paper, Y-doped vanadium oxide (VOx) thin films prepared by a reactively sputtering process exhibit enhanced performance for the microbolometer application compared with frequently-applied VOx thin films. Both undoped and Y-doped VOx thin films are amorphous due to the relatively low deposition temperature. Y-doped VOx thin films exhibit smoother surface morphology than VOx due to the restrained expansion of particles during depositions. Y-doping increases the temperature coefficient of resistivity by over 20% for the doping level of 1.30 at%. The change rate of resistivity, after aging for 72 h, of thin films was reduced from about 15% for undoped VOx to 2% due to the introduction of Y. Moreover, Y-doped VOx thin films have a low 1/f noise level as VOx ones. Y-doping provides an attractive approach for preparing VOx thermal-sensitive materials with enhanced performance for microbolometers.

  13. Doping Versatile n-Type Organic Semiconductors via Room Temperature Solution-Processable Anionic Dopants.

    PubMed

    Chueh, Chu-Chen; Li, Chang-Zhi; Ding, Feizhi; Li, Zhong'an; Cernetic, Nathan; Li, Xiaosong; Jen, Alex K-Y

    2017-01-11

    In this study, we describe a facile solution-processing method to effectively dope versatile n-type organic semiconductors, including fullerene, n-type small molecules, and graphene by commercially available ammonium and phosphonium salts via in situ anion-induced electron transfer. In addition to the Lewis basicity of anions, we unveiled that the ionic binding strength between the cation and anion of the salts is also crucial in modulating the electron transfer strength of the dopants to affect the resulting doping efficiency. Furthermore, combined with the rational design of n-type molecules, an n-doped organic semiconductor is demonstrated to be thermally and environmentally stable. This finding provides a simple and generally applicable method to make highly efficient n-doped conductors which complements the well-established p-doped organics such as PEDOT:PSS for organic electronic applications.

  14. Synthesis and enhanced fluorescence of Ag doped CdTe semiconductor quantum dots.

    PubMed

    Ding, Si-Jing; Liang, Shan; Nan, Fan; Liu, Xiao-Li; Wang, Jia-Hong; Zhou, Li; Yu, Xue-Feng; Hao, Zhong-Hua; Wang, Qu-Quan

    2015-02-07

    Doping with intentional impurities is an intriguing way to tune the properties of semiconductor nanocrystals. However, the synthesis of some specific doped semiconductor nanocrystals remains a challenge and the doping mechanism in this strongly confined system is still not clearly understood. In this work, we report, for the first time, the synthesis of stable and water-soluble Ag-doped CdTe semiconductor quantum dots (SQDs) via a facile aqueous approach. Experimental characterization demonstrated the efficient doping of the Ag impurities into the CdTe SQDs with an appropriate reaction time. By doping 0.3% Ag impurities, the Stokes shift is decreased by 120 meV, the fluorescence intensity is enhanced more than 3 times, the radiative rate is enhanced 4.2 times, and the non-radiative rate is efficiently suppressed. These observations reveal that the fluorescence enhancement in Ag-doped CdTe SQDs is mainly attributed to the minimization of surface defects, filling of the trap states, and the enhancement of the radiative rate by the silver dopants. Our results suggest that the silver doping is an efficient method for tuning the optical properties of the CdTe SQDs.

  15. Tunable positive magnetoresistance effect of Co-doped amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Jiang, Y. C.; Wu, Z. P.; Bao, W.; Xu, S. J.; Gao, J.

    2012-04-01

    Co-doped amorphous carbon (a-C:Co) films were deposited on n-type Si substrates by pulsed-laser deposition method. A positive magnetoresistance (PMR) effect has been observed after Co doped into a-C films. Such a PMR is tuned by the bias voltage and reaches a peak at a particular voltage, as observed from the Current-voltage relations of the a-C:Co/Si junctions at various magnetic fields. MR-H characteristics were further studied at the temperatures of 65 K, which showed that under the reverse electric field the a-C:Co/Si junctions had a colossal PMR (over 100%). Raman spectra results demonstrate that Co doping favors the formation of graphitic sp2 sites. The mechanism of the PMR effect is attributed to the interactions between the applied magnetic field and Co ions, which leads to the transition from sp2 sites to sp3 sites and increase the resistance.

  16. Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

    PubMed

    Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

    2016-11-24

    To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron

  17. Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

    SciTech Connect

    Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

    2013-12-23

    We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes.

  18. Thermomechanical Analysis on the Phase Stability of Nitrogen-Doped Amorphous Ge2Sb2Te5 Films

    NASA Astrophysics Data System (ADS)

    Park, Il-Mok; Cho, Ju-Young; Yang, Tae-Youl; Park, Eun Soo; Joo, Young-Chang

    2011-06-01

    The phase stability of amorphous Ge2Sb2Te5 (GST) films affects the performance and reliability of phase change memory (PRAM) devices. The viscosity and the glass forming ability of nitrogen (N)-doped amorphous GST films were investigated in terms of thermomechanical behavior using wafer curvature measurements. The viscosity which increased by two orders of magnitude was observed in the N-doped amorphous GST film by measuring the stress relaxation accompanied by bimolecular structural relaxation. The glass forming ability (ΔTx), difference between the glass transition temperature (Tg) and the crystallization temperature (Tc), of GST increased as the nitrogen contents increased. These increases in the viscosity and ΔTx indicate the retardation of atomic diffusion in amorphous GST and the stabilization of the amorphous phase.

  19. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    SciTech Connect

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  20. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  1. Experimental verification of theoretically calculated parameters of Te15(Se100-xBix)85(x = 0,2,4at.%) amorphous semiconductors

    NASA Astrophysics Data System (ADS)

    Kumar, Kameshwar; Thakur, Nagesh

    2013-06-01

    The Se-Te-Bi amorphous semiconductors have been prepared by melt quenching technique. In the present study, we have theoretically calculated the optical energy band gap, glass transition temperature and density of Se-Te-Bi amorphous semiconductors. Experimentally the optical energy band gap has been found from transmission spectra of thin films using Tauc's method, glass transition temperature from Differential Thermal Analysis data and density using Archimedes method.

  2. Oxygen deficiency and Sn doping of amorphous Ga{sub 2}O{sub 3}

    SciTech Connect

    Heinemann, M. D.; Unold, T.; Berry, J.; Teeter, G.; Ginley, D.

    2016-01-11

    The potential of effectively n-type doping Ga{sub 2}O{sub 3} considering its large band gap has made it an attractive target for integration into transistors and solar cells. As a result amorphous GaO{sub x} is now attracting interest as an electron transport layer in solar cells despite little information on its opto-electrical properties. Here we present the opto-electronic properties, including optical band gap, electron affinity, and charge carrier density, for amorphous GaO{sub x} thin films deposited by pulsed laser deposition. These properties are strongly dependent on the deposition temperature during the deposition process. The deposition temperature has no significant influence on the general structural properties but produces significant changes in the oxygen stoichiometry of the films. The density of the oxygen vacancies is found to be related to the optical band gap of the GaO{sub x} layer. It is proposed that the oxygen deficiency leads to defect band below the conduction band minimum that increases the electron affinity. These properties facilitate the use of amorphous GaO{sub x} as an electron transport layer in Cu(In,Ga)Se{sub 2} and in Cu{sub 2}O solar cells. Further it is shown that at low deposition temperatures, extrinsic doping with Sn is effective at low Sn concentrations.

  3. A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

    NASA Astrophysics Data System (ADS)

    Chen, Chi-Le; Chen, Wei-Feng; Zhou, Lei; Wu, Wei-Jing; Xu, Miao; Wang, Lei; Peng, Jun-Biao

    2016-03-01

    In the application of the Lambert W function, the surface potential for amorphous oxide semiconductor thin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states. While the surface potential under the above-threshold region is approximated by another asymptotic equation only considering the free carriers. The intersection point between these two asymptotic equations represents the transition from the weak accumulation to the strong accumulation. Therefore, the gate voltage corresponding to the intersection point is defined as threshold voltage of AOS TFTs. As a result, an analytical expression for the threshold voltage is derived from this novel definition. It is shown that the threshold voltage achieved by the proposed physics-based model is agreeable with that extracted by the conventional linear extrapolation method. Furthermore, we find that the free charge per unit area in the channel starts increasing sharply from the threshold voltage point, where the concentration of the free carriers is a little larger than that of the localized carriers. The proposed model for the threshold voltage of AOS TFTs is not only physically meaningful but also mathematically convenient, so it is expected to be useful for characterizing and modeling AOS TFTs.

  4. Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

    PubMed Central

    Hosono, Hideo; Toda, Yoshitake; Kamiya, Toshio; Watanabe, Satoru

    2017-01-01

    Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm2/(V · s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability. PMID:28028243

  5. Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

    SciTech Connect

    Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V.

    2014-08-20

    A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

  6. Chalcogenide amorphous nanoparticles doped poly (methyl methacrylate) with high nonlinearity for optical waveguide

    NASA Astrophysics Data System (ADS)

    Xue, Xiaojie; Nagasaka, Kenshiro; Cheng, Tonglei; Deng, Dinghuan; Zhang, Lei; Liu, Lai; Suzuki, Takenobu; Ohishi, Yasutake

    2015-03-01

    Nonlinear optical polymers show promising potential applications in photonics, for example, electro-optical devices. Poly (methyl methacrylate) (PMMA) is widely used in optical waveguides, integrated optics and optical fibers. However, PMMA has not been used for nonlinear optical waveguides since it has a low nonlinear refractive index. We successfully prepared chalcogenide amorphous nanoparticles doped PMMA that had a high nonlinearity. The As3S7 bulk glass was dissolved in propylamine to form a cluster solution. Then the As3S7/propylamine solution was added into methyl methacrylate (MMA) containing photoinitiator Irgacure 184 about 0.5 wt%. After well mixing the As3S7 nanoparticle doped MMA was transparent. Under the irradiation by a 365 nm UV lamp, As3S7 nanoparticles doped PMMA was obtained with yellow color. The third-order nonlinear optical susceptibility of As3S7 nanoparticles doped PMMA was investigated. An optical waveguide array based on the As3S7 nanoparticles doped PMMA composite of high nonlinearity was fabricated.

  7. Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules.

    PubMed

    Salzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, Norbert

    2016-03-15

    Today's information society depends on our ability to controllably dope inorganic semiconductors, such as silicon, thereby tuning their electrical properties to application-specific demands. For optoelectronic devices, organic semiconductors, that is, conjugated polymers and molecules, have emerged as superior alternative owing to the ease of tuning their optical gap through chemical variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of molecular electrical doping for improving the performance of, for example, organic light-emitting devices or organic solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of molecular doping in organic semiconductors are only little understood compared with their inorganic counterparts. Here, we review the broad range of phenomena observed upon molecularly doping organic semiconductors and identify two distinctly different scenarios: the pairwise formation of both organic semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between organic semiconductor and dopant through supramolecular hybridization of their respective frontier molecular orbitals on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed on the basis of the characteristic and strikingly different signatures of the individual species involved in the respective doping processes in a variety of spectroscopic techniques. The critical importance of a statistical view of doping, rather than a bimolecular picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorganic and organic semiconductors to be their respective density of electronic states and the doping induced changes thereof. Engineering the density of states of doped organic semiconductors, the Fermi

  8. Atomic scale insight into the amorphous structure of Cu doped GeTe phase-change material

    SciTech Connect

    Zhang, Linchuan; Sa, Baisheng; Zhou, Jian; Sun, Zhimei; Song, Zhitang

    2014-10-21

    GeTe shows promising application as a recording material for phase-change nonvolatile memory due to its fast crystallization speed and extraordinary amorphous stability. To further improve the performance of GeTe, various transition metals, such as copper, have been doped in GeTe in recent works. However, the effect of the doped transition metals on the stability of amorphous GeTe is not known. Here, we shed light on this problem for the system of Cu doped GeTe by means of ab initio molecular dynamics calculations. Our results show that the doped Cu atoms tend to agglomerate in amorphous GeTe. Further, base on analyzing the pair correlation functions, coordination numbers and bond angle distributions, remarkable changes in the local structure of amorphous GeTe induced by Cu are obviously seen. The present work may provide some clues for understanding the effect of early transition metals on the local structure of amorphous phase-change compounds, and hence should be helpful for optimizing the structure and performance of phase-change materials by doping transition metals.

  9. Controlling ferromagnetism of (In,Fe)As semiconductors by electron doping

    SciTech Connect

    Dang Vu, Nguyen; Fukushima, Tetsuya; Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2014-02-21

    Based on experimental results, using the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) method and Monte Carlo simulation, we study the mechanism of ferromagnetic behavior of (In,Fe)As. We show that with doped Be atoms occupying in interstitial sites, chemical pair interactions between atoms and magnetic exchange interactions between Fe atoms change due to electron concentration. Therefore, by controlling the doping process, magnetic behavior of (In,Fe)As is controlled and ferromagnetism is observed in this semiconductor.

  10. Doping induced structural changes in colloidal semiconductor nanowires.

    PubMed

    Kandel, Krishna Prasad; Pietsch, Ullrich; Li, Zhen; Oztürk, Ozgül Kurtulus

    2013-03-28

    Undoped and Mn(2+)-doped CdSe nanowires (NWs) grown by a solution-liquid-solid (SLS) method using Bi nanocatalysts have been studied by X-ray powder diffraction measurements. Except for heavily doped nanowires no measurable changes in nanowire lattice parameters were observed. The lattice parameter of heavily doped nanowires shrinks by about 0.5% compared with the undoped ones, which corresponds to a doping concentration of 1.6%. For the other samples no change in lattice parameter is measured referring to a doping level much below 1%. Real structural parameters of nanowires were found to vary as a function of doping level, such as the zinc blende to wurtzite ratio, the static Debye-Waller factor, axial strain, and the number of stacking faults. Compared with the undoped nanowires the overall perfection is slightly improved for low doping but deteriorates drastically for higher doping. Our results highlight the importance of controlling the dopant concentration during the preparation of doped nanostructures.

  11. Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si

    SciTech Connect

    Ma Ming; Xue Qingzhong; Chen Huijuan; Zhou Xiaoyan; Xia Dan; Lv Cheng; Xie Jie

    2010-08-09

    The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO{sub 2} layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO{sub 2}/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm{sup 2} at room temperature, the a-C:Pd/SiO{sub 2}/Si solar cell fabricated at 350 deg. C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp{sup 2}-bonded carbon clusters in the carbon film caused by the high temperature deposition.

  12. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  13. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca i.; Kleider, Jean-Paul; Yao, Fei; Lee, Young Hee

    2016-10-01

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq-1 to 1260 Ω sq-1 for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm2 V-1 s-1 indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  14. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures.

    PubMed

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca I; Kleider, Jean-Paul; Yao, Fei; Hee Lee, Young

    2016-10-12

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n‑ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq(-1) to 1260 Ω sq(-1) for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm(2) V(-1) s(-1) indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  15. Interfacial nondegenerate doping of MoS2 and other two-dimensional semiconductors.

    PubMed

    Behura, Sanjay; Berry, Vikas

    2015-03-24

    Controlled nondegenerate doping of two-dimensional semiconductors (2DSs) with their ultraconfined carriers, high quantum capacitance, and surface-sensitive electronics can enable tuning their Fermi levels for rational device design. However, doping techniques for three-dimensional semiconductors, such as ion implantation, cannot be directly applied to 2DSs because they inflict high defect density. In this issue of ACS Nano, Park et al. demonstrate that interfacing 2DSs with substrates having dopants can controllably inject carriers to achieve nondegenerate doping, thus significantly broadening 2DSs' functionality and applications. Futuristically, this can enable complex spatial patterning/contouring of energy levels in 2DSs to form p-n junctions, integrated logic, and opto/electronic devices. The process is also extendable to biocellular-interfaced devices, band-continuum structures, and intricate 2D circuitry.

  16. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics.

    PubMed

    Kiefer, David; Yu, Liyang; Fransson, Erik; Gómez, Andrés; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Müller, Christian

    2017-01-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm(-1) and Seebeck coefficient from 100 to 60 μV K(-1) upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m(-1) K(-1) gives rise to a thermoelectric Figure of merit ZT ∼ 10(-4) that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  17. Fabrication and characterization of thermomechanically processed sulfur and boron doped amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Carlson, Lonnie

    Small scale, high power density, reliable, and long-life power supplies would be useful or even critical for space missions or the growing number of microdetectors, microsensors, and miniature vehicles. Alpha or beta particle voltaic devices could satisfy these requirements but have been shown to degrade quickly due to radiation damage. Amorphous carbon (a-C) PN junctions or PIN devices could provide radiation hardness and sufficiently high efficiency. As the range of alpha and beta particles in a-C is ˜20-120microm, much thicker films than are typical are needed to maximize collection of the particle energy. In this work, the fabrication of thermomechanically processed p- and n-type doped a-C films were investigated as a first step in the future development of radiation hard voltaic devices. Boron carbide (B4C) powder was mixed with a-C nanopowders as a possible p-type dopant with sulfur powder utilized as a possible n-type dopant. Doping levels of 2.5at%, 5.0at%, and 10.0at% were investigated for both dopants with films pressed at 109°C over a pressure range of 0.3-5.0GPa. Initial attempts to fabricate rectifying PN junctions and PIN devices was unsuccessful. Bonding properties were characterized using Raman spectroscopy with electronic properties primarily assessed using the van der Pauw method. Undoped a-C and boron-doped films were found to be slightly p-type with sulfur-doped films converting to n-type. All films were found to consist almost entirely of nano-graphitic sp2 rings with only slight changes in disorder at different pressures. Sulfur doped films were less brittle which is indicative of crosslinking. Boron doping did not significantly change the film electronic properties and is not an effective dopant at these temperatures and pressures. Sulfur doping had a greater effect and could likely be utilized as basis for an n-type material in a device. Initial irradiation studies using alpha particles showed that boron and undoped films became more p

  18. Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).

    PubMed

    Kim, Choong-Ki; Kim, Eungtaek; Lee, Myung Keun; Park, Jun-Young; Seol, Myeong-Lok; Bae, Hagyoul; Bang, Tewook; Jeon, Seung-Bae; Jun, Sungwoo; Park, Sang-Hee K; Choi, Kyung Cheol; Choi, Yang-Kyu

    2016-09-14

    An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In-Ga-Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (gm), 158% for the linear current (Ilinear), and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized.

  19. Applications of Non-Crystalline Materials — C. REAL TIME OPTICAL RECORDING ON THIN FILMS OF AMORPHOUS SEMICONDUCTORS

    NASA Astrophysics Data System (ADS)

    Mitkova, Maria

    The following sections are included: * Introduction * Amorphous Semiconductors as Optical Storage Medium * Principles and Results on Real-time Optical Recording * Digital optical recording * Digital optical recording due to ablation of the films by illumination with light * Digital optical recording due to coagulation of an island film * Digital optical recording due to phase transition * Digital optical recording due to photoinduced surface deposition of metallic silver * Principles of holographic recording * Recording and readout * Classification of the holograms * Diffraction efficiency * Results in holographic recording on chalcogenide glasses * Future Trends * Acknowledgments * References

  20. The Excitation Mechanism of Praseodymium-Doped Semiconductors

    DTIC Science & Technology

    1994-06-01

    7. Ptaseodymium Implant List ........................................................ 32 8. Praseodymium Implant Characteristics (390 keV...15. Erbium Implant Characteristics (1 MeV) ........................................ 103 16. Pr and Codope Element Implantion Characteristics in Alo.0...Semiconductors are the choice as host material since, as injection mode diodes, they can electrically pump RE luminescence. Researchers have worked

  1. Retardation of the orientation relaxation of azo-dye doped amorphous polymers upon photoinduced isomerization

    NASA Astrophysics Data System (ADS)

    Chan, S. W.; Quatela, A.; Casalboni, M.; Nunzi, J.-M.

    2006-08-01

    The orientation relaxation upon photo-induced isomerization of azo-dyes was studied. All-optical poling (AOP) and photo-induced birefringence, which are based on the mechanism of angular selective photo-isomerization, were employed to manipulate the angular distribution of azo-dyes (Disperse-red 1) doped in three different amorphous polymers: (poly(methyl methacrylate) PMMA, poly(carbonate) PC and poly(sulfone) PSU), with different glass transition temperature (T g). In the case of AOP, quasi-permanent macroscopic second-order nonlinear optical susceptibility χ (2) was inscribed in the dye-doped centro-symmetric polymer systems, while in the case of photo-induced birefringence, quasi-permanent birefringence Δn was inscribed in the dye-doped isotropic polymer systems. Relaxation of χ (2) and Δn were monitored upon different duration of AOP and photo-induced birefringence preparation. Experimental results show that azo-dye orientation relaxation follows the duration of the photo-nduced isomerization process: the longer the photo-induced isomerization process, the slower the relaxation of the inscribed χ (2) and Δn. In addition, retardation of the orientation relaxation does not follow a simple relation with hardness (T g) of the polymer host. Causes of the orientation relaxation retardation are discussed.

  2. Doping-assisted defect control in compound semiconductors

    DOEpatents

    Specht, Petra; Weber, Eicke R.; Weatherford, Todd Russell

    2006-07-11

    The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.

  3. Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Palai, Ratnakar

    2016-10-01

    Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.

  4. Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors.

    PubMed

    Gao, Jian; Kim, Young Duck; Liang, Liangbo; Idrobo, Juan Carlos; Chow, Phil; Tan, Jiawei; Li, Baichang; Li, Lu; Sumpter, Bobby G; Lu, Toh-Ming; Meunier, Vincent; Hone, James; Koratkar, Nikhil

    2016-11-01

    Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.

  5. Effects of molybdenum doping and thermal annealing on the physical properties of amorphous In–Zn–O films

    SciTech Connect

    Liu, Shiu-Jen; Wu, Kuei-Ching; Peng, Kun-Cheng

    2015-06-15

    Highlights: • The effects of Mo doping and thermal annealing on a-IZO films were studied. • The carrier mobility of Mo-doped a-IZO films was enhanced by thermal annealing. • The optical bandgap of a-IZO films was unaffected by Mo doping. • Ferromagnetism was observed in Mo-doped a-IZO films after annealing. - Abstract: Amorphous In–Zn–O (a-IZO) films doped with Mo were prepared on glass substrates by using magnetron co-sputtering technique. The Mo concentration was controlled by varying the sputtering power applied on the Mo target. The effects of Mo doping and thermal annealing on the electrical, optical and magnetic properties of the a-IZO films were studied. The electrical properties of a-IZO films were found to be strongly affected by Mo doping and thermal annealing. The optical transmission near the absorption edge of a-IZO films is enhanced by Mo doping due to the decrease in reflection. The optical bandgap estimated to be 3.2 eV of a-IZO films is unaffected by Mo doping and thermal annealing. Moreover, some of Mo-doped films exhibit room-temperature ferromagnetism after annealing.

  6. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

    PubMed

    Rai, Amritesh; Valsaraj, Amithraj; Movva, Hema C P; Roy, Anupam; Ghosh, Rudresh; Sonde, Sushant; Kang, Sangwoo; Chang, Jiwon; Trivedi, Tanuj; Dey, Rik; Guchhait, Samaresh; Larentis, Stefano; Register, Leonard F; Tutuc, Emanuel; Banerjee, Sanjay K

    2015-07-08

    To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using high-κ oxides, respectively. The goal of this work is to demonstrate a high-κ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide (MoS2). Utilizing amorphous titanium suboxide (ATO) as the "high-κ dopant", we achieved a contact resistance of ∼180 Ω·μm that is the lowest reported value for ML MoS2. An ON current as high as 240 μA/μm and field effect mobility as high as 83 cm(2)/V-s were realized using this doping technique. Moreover, intrinsic mobility as high as 102 cm(2)/V-s at 300 K and 501 cm(2)/V-s at 77 K were achieved after ATO encapsulation that are among the highest mobility values reported on ML MoS2. We also analyzed the doping effect of ATO films on ML MoS2, a phenomenon that is absent when stoichiometric TiO2 is used, using ab initio density functional theory (DFT) calculations that shows excellent agreement with our experimental findings. On the basis of the interfacial-oxygen-vacancy mediated doping as seen in the case of high-κ ATO-ML MoS2, we propose a mechanism for the mobility enhancement effect observed in TMD-based devices after encapsulation in a high-κ dielectric environment.

  7. Luminescence, Plasmonic and Magnetic Properties of Doped Semiconductor Nanocrystals: Current Developments and Future Prospects.

    PubMed

    Pradhan, Narayan; Adhikari, Samrat Das; Nag, Angshuman; Sarma, D D

    2017-02-02

    Introducing few atoms of impurities or dopants in semiconductor nanocrystals can drastically alter the existing or even introduce new properties. For example, mid-gap states created by doping tremendously affect photocatalytic activities and surface controlled redox reactions, generate new emission centres, show thermometric optical switching, make suitable FRET donors by enhancing the excited state lifetime and also create localized surface plasmon resonance induced low energy absorption. In addition, researchers have more recently started focusing their attention on doped nanocrystals as an important and alternative material for solar energy conversion in order to meet the current demand for renewable energy. Moreover, electrical as well as magnetic properties of the host are also strongly altered on doping. These dopant-induced beneficial changes in material properties suggest that doped nanocrystals with proper selections of dopant-host pairs may be helpful for generating designer materials for a wide range of current technological needs. Such exciting properties related to various aspects of doping a variety of semiconductor nanocrystals are summarized and reported in this mini review.

  8. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect

    Morales-Masis, M. Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  9. Effect of solid-phase amorphization on the spectral characteristics of europium-doped gadolinium molybdate

    NASA Astrophysics Data System (ADS)

    Shmurak, S. Z.; Kiselev, A. P.; Kurmasheva, D. M.; Red'Kin, B. S.; Sinitsyn, V. V.

    2010-05-01

    A method is proposed for detecting spectral characteristics of optically inactive molybdates of rare-earth elements by their doping with rare-earth ions whose luminescence lies in the transparency region of all structural modifications of the sample. Gadolinium molybdate is chosen as the object of investigations, while europium ions are used as an optically active and structurally sensitive admixture. It is shown that after the action of a high pressure under which gadolinium molybdate passes to the amorphous state, the spectral characteristics of Gd1.99Eu0.01(MoO4)3 (GMO:Eu) change radically; namely, considerable line broadening is observed in the luminescence spectra and the luminescence excitation spectra, while the long-wave threshold of optical absorption is shifted considerably (by approximately 1.1 eV) towards lower energies. It is found that by changing the structural state of GMO:Eu by solid-state amorphization followed by annealing, the spectral characteristics of the sample can be purposefully changed. This is extremely important for solving the urgent problem of designing high-efficiency light-emitting diodes producing “white” light.

  10. Using x-ray diffraction to identify precipitates in transition metal doped semiconductors

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang; Potzger, K.; Talut, G.; von Borany, J.; Skorupa, W.; Helm, M.; Fassbender, J.

    2008-04-01

    In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated the structural and magnetic properties of transition metal doped ZnO, TiO2, and Si, prepared by ion implantation. Crystalline precipitates, i.e., transition metal (Co, Ni) and Mn-silicide nanocrystals, are responsible for the magnetism. Additionally due to their orientation nature with respect to the host, these nanocrystals in some cases are not detectable by conventional x-ray diffraction (XRD). This nature results in the pitfall of using XRD to exclude magnetic precipitates in DMS materials.

  11. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  12. Tunable Surface Plasmon and Phonon Polariton Interactions for Moderately Doped Semiconductor Surfaces

    PubMed Central

    Janipour, Mohsen; Misirlioglu, Ibrahim Burc; Sendur, Kursat

    2016-01-01

    Spatial charge distribution for biased semiconductors fundamentally differs from metals since they can allow inhomogeneous charge distributions due to penetration of the electric field, as observed in the classical Schottky junctions. Similarly, the electrostatics of the dielectric/semiconductor interface can lead to a carrier depletion or accumulation in the semiconductor side when under applied bias. In this study, we demonstrate that the inhomogeneous carrier accumulation in a moderately p-doped GaAs–dielectric interface can be tailored for tunable plasmonics by an external voltage. Solving Maxwell’s equations in the doped GaAs-dielectric stack, we investigate the tunability of the surface plasmon and phonon polaritons’ interaction via an external bias. The plasmonic mode analysis of such an interface reveals interesting dispersion curves for surface plasmon and phonon polariton interactions that are not possible in metals. We show that the plasmon dispersion curve can be engineered through an external bias using the inherent properties of the p-doped GaAs– dielectric interface. PMID:27698393

  13. Tunable Surface Plasmon and Phonon Polariton Interactions for Moderately Doped Semiconductor Surfaces

    NASA Astrophysics Data System (ADS)

    Janipour, Mohsen; Misirlioglu, Ibrahim Burc; Sendur, Kursat

    2016-10-01

    Spatial charge distribution for biased semiconductors fundamentally differs from metals since they can allow inhomogeneous charge distributions due to penetration of the electric field, as observed in the classical Schottky junctions. Similarly, the electrostatics of the dielectric/semiconductor interface can lead to a carrier depletion or accumulation in the semiconductor side when under applied bias. In this study, we demonstrate that the inhomogeneous carrier accumulation in a moderately p-doped GaAs–dielectric interface can be tailored for tunable plasmonics by an external voltage. Solving Maxwell’s equations in the doped GaAs-dielectric stack, we investigate the tunability of the surface plasmon and phonon polaritons’ interaction via an external bias. The plasmonic mode analysis of such an interface reveals interesting dispersion curves for surface plasmon and phonon polariton interactions that are not possible in metals. We show that the plasmon dispersion curve can be engineered through an external bias using the inherent properties of the p-doped GaAs– dielectric interface.

  14. Amorphous Phosphorus/Nitrogen-Doped Graphene Paper for Ultrastable Sodium-Ion Batteries.

    PubMed

    Zhang, Chao; Wang, Xi; Liang, Qifeng; Liu, Xizheng; Weng, Qunhong; Liu, Jiangwei; Yang, Yijun; Dai, Zhonghua; Ding, Kejian; Bando, Yoshio; Tang, Jie; Golberg, Dmitri

    2016-03-09

    As the most promising anode material for sodium-ion batteries (SIBs), elemental phosphorus (P) has recently gained a lot of interest due to its extraordinary theoretical capacity of 2596 mAh/g. The main drawback of a P anode is its low conductivity and rapid structural degradation caused by the enormous volume expansion (>490%) during cycling. Here, we redesigned the anode structure by using an innovative methodology to fabricate flexible paper made of nitrogen-doped graphene and amorphous phosphorus that effectively tackles this problem. The restructured anode exhibits an ultrastable cyclic performance and excellent rate capability (809 mAh/g at 1500 mA/g). The excellent structural integrity of the novel anode was further visualized during cycling by using in situ experiments inside a high-resolution transmission electron microscope (HRTEM), and the associated sodiation/desodiation mechanism was also thoroughly investigated. Finally, density functional theory (DFT) calculations confirmed that the N-doped graphene not only contributes to an increase in capacity for sodium storage but also is beneficial in regards to improved rate performance of the anode.

  15. Application of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films for ultraviolet detection

    NASA Astrophysics Data System (ADS)

    Zkria, Abdelrahman; Gima, Hiroki; Yoshitake, Tsuyoshi

    2017-03-01

    Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon (UNCD/a-C:H) films were grown by coaxial arc plasma deposition in the ambient of nitrogen and hydrogen mixed gases. Synthesized films were structurally investigated by X-ray photoemission and near-edge X-ray absorption fine structure spectroscopies. A heterojunction with p-type Si substrate was fabricated to study the ultraviolet photodetection properties of the film. Capacitance-voltage measurements assure the expansion of a depletion region into the film side. Current-voltage curves in the dark showed a good rectifying behaviour in the bias voltages range between ±5 V. Under 254 nm monochromatic light, the heterojunction shows a capability of deep ultraviolet light detection, which can be attribute to the existence of UNCD grains. As the diode was cooled from 300 K down to 150 K, the detectivity has a notable enhancement from 1.94 × 105 cm Hz1/2 W-1 at 300 K to 5.11 × 1010 cm Hz1/2 W-1 at 150 K, which is mainly due to a remarkable reduction in the leakage current at low temperatures. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H film works as ultraviolet-range photovoltaic material.

  16. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of

  17. Magnetism in alkali-metal-doped wurtzite semiconductor materials controlled by strain engineering

    NASA Astrophysics Data System (ADS)

    Guo, J. H.; Li, T. H.; Liu, L. Z.; Hu, F. R.

    2016-09-01

    The study of the magnetism and optical properties of semiconductor materials by defect engineering has attracted much attention because of their potential uses in spintronic and optoelectronic devices. In this paper, first-principle calculations discloses that cationic vacancy formation energy of the doped wurtzite materials can be sharply decreased due to alkali metal dopants and shows that their magnetic properties strongly depend on defect and doping concentration. This effect can be ascribed to the volume change induced by foreign elements doped into the host system and atomic population's difference. The symmetric deformation induced by biaxial strain can further regulate this behavior. Our results suggest that the formation of cationic vacancy can be tailored by strain engineering and dopants incorporation.

  18. Effects of nitrogen doping on the electrical conductivity and optical absorption of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by coaxial arc plasma deposition

    NASA Astrophysics Data System (ADS)

    Zkria, Abdelrahman; Katamune, Yūki; Yoshitake, Tsuyoshi

    2016-07-01

    3 at. % nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized by coaxial arc plasma deposition. Optically, the films possess large absorption coefficients of more than 105 cm-1 at photon energies from 3 to 5 eV. The optical band gap was estimated to be 1.28 eV. This value is smaller than that of undoped films, which might be attributable to increased sp2 fractions. The temperature dependence of the electrical conductivity implies that carrier transport follows a hopping conduction model. Heterojunctions with p-type Si substrates exhibited a typical rectifying action. From the capacitance-voltage characteristics that evidently indicated the expansion of a depletion region into the film side, the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 × 1016 cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H films are applicable as an n-type semiconductor.

  19. Ferromagnetic semiconductor nanoclusters: Co-doped Cu2O

    NASA Astrophysics Data System (ADS)

    Antony, Jiji; Qiang, You; Faheem, Muhammad; Meyer, Daniel; McCready, David E.; Engelhard, Mark H.

    2007-01-01

    5% Co-doped cuprous oxide dilute magnetic semiconducting cluster film composed of two different sizes of crystalline nanoclusters, prepared using sputtering-aggregation technique is found to be ferromagnetic at 400K. With the increase in average crystallite size from 4.2to8nm, the coercivity increased. Magnetic field up to 2T is applied and saturation magnetization is achieved at 3kOe field in both cases. Cu2O phase is observed from cluster film deposited on Si wafer when analyzed using x-ray diffraction. Co in Cu2O host reveals a +2 oxidation state via x-ray photoelectron spectroscopy. Positive magnetoresistance from samples exhibits a temperature dependent decrease.

  20. Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy.

    PubMed

    Brinciotti, Enrico; Gramse, Georg; Hommel, Soeren; Schweinboeck, Thomas; Altes, Andreas; Fenner, Matthias A; Smoliner, Juergen; Kasper, Manuel; Badino, Giorgio; Tuca, Silviu-Sorin; Kienberger, Ferry

    2015-09-21

    We present a new method to extract resistivity and doping concentration of semiconductor materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using a three error parameters de-embedding workflow, the S11 raw data are converted into calibrated capacitance and resistance images where no calibration sample is required. The SMM capacitance and resistance values were measured at 18 GHz and ranged from 0 to 100 aF and from 0 to 1 MΩ, respectively. A tip-sample analytical model that includes tip radius, microwave penetration skin depth, and semiconductor depletion layer width has been applied to extract resistivity and doping concentration from the calibrated SMM resistance. The method has been tested on two doped silicon samples and in both cases the resistivity and doping concentration are in quantitative agreement with the data-sheet values over a range of 10(-3)Ω cm to 10(1)Ω cm, and 10(14) atoms per cm(3) to 10(20) atoms per cm(3), respectively. The measured dopant density values, with related uncertainties, are [1.1 ± 0.6] × 10(18) atoms per cm(3), [2.2 ± 0.4] × 10(17) atoms per cm(3), [4.5 ± 0.2] × 10(16) atoms per cm(3), [4.5 ± 1.3] × 10(15) atoms per cm(3), [4.5 ± 1.7] × 10(14) atoms per cm(3). The method does not require sample treatment like cleavage and cross-sectioning, and high contact imaging forces are not necessary, thus it is easily applicable to various semiconductor and materials science investigations.

  1. Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

    NASA Astrophysics Data System (ADS)

    Brinciotti, Enrico; Gramse, Georg; Hommel, Soeren; Schweinboeck, Thomas; Altes, Andreas; Fenner, Matthias A.; Smoliner, Juergen; Kasper, Manuel; Badino, Giorgio; Tuca, Silviu-Sorin; Kienberger, Ferry

    2015-08-01

    We present a new method to extract resistivity and doping concentration of semiconductor materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using a three error parameters de-embedding workflow, the S11 raw data are converted into calibrated capacitance and resistance images where no calibration sample is required. The SMM capacitance and resistance values were measured at 18 GHz and ranged from 0 to 100 aF and from 0 to 1 MΩ, respectively. A tip-sample analytical model that includes tip radius, microwave penetration skin depth, and semiconductor depletion layer width has been applied to extract resistivity and doping concentration from the calibrated SMM resistance. The method has been tested on two doped silicon samples and in both cases the resistivity and doping concentration are in quantitative agreement with the data-sheet values over a range of 10-3 Ω cm to 101 Ω cm, and 1014 atoms per cm3 to 1020 atoms per cm3, respectively. The measured dopant density values, with related uncertainties, are [1.1 +/- 0.6] × 1018 atoms per cm3, [2.2 +/- 0.4] × 1017 atoms per cm3, [4.5 +/- 0.2] × 1016 atoms per cm3, [4.5 +/- 1.3] × 1015 atoms per cm3, [4.5 +/- 1.7] × 1014 atoms per cm3. The method does not require sample treatment like cleavage and cross-sectioning, and high contact imaging forces are not necessary, thus it is easily applicable to various semiconductor and materials science investigations.

  2. Thermoelectric and electrical properties of micro-quantity Sn-doped amorphous indium-zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Byeon, Jayoung; Kim, Seohan; Lim, Jae-Hong; Song, Jae Yong; Park, Sun Hwa; Song, Pungkeun

    2017-01-01

    To realize high thermoelectric performance, it was tried to control both high electrical conductivity (σ) and low thermal conductivity (K) for the Sn-doped indium-zinc oxide films prepared by DC magnetron sputtering. The highest power factor was obtained post-annealed at 200 °C due to the highest σ. However, the highest figure of merit was obtained annealed at 500 °C. It could be attributed to both amorphous structure with low K by phonon and the highest Hall mobility. Thermoelectric and electrical properties of the film could be controlled by both heat treatment and Sn doping with high bond enthalpy.

  3. Manipulable GMR Effect in a δ-Doped Magnetically Confined Semiconductor Heterostructure

    NASA Astrophysics Data System (ADS)

    Jiang, Ya-Qing; Lu, Mao-Wang; Huang, Xin-Hong; Yang, Shi-Peng; Tang, Qiang

    2016-06-01

    A giant magnetoresistance (GMR) device formed by depositing two parallel nanosized ferromagnetic strips on top of a semiconductor heterostructure has been proposed theoretically (Zhai et al. in Phys Rev B 66:125305, 2002). For the sake of manipulating its performance, we introduce a tunable δ-potential into this device with the help of atomic-layer doping techniques such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition. We investigate theoretically the impact of such δ-doping on the magnetoresistance ratio (MR) of the GMR device. We find that, although the δ-doping is embedded in the device, a considerable GMR effect still exists due to the significant difference in electronic transmission between parallel (P) and antiparallel (AP) configurations. Moreover, the calculated results show that the MR of the GMR device varies sensitively with the weight and/or position of the δ-doping. Thus, the GMR device can be controlled by changing the δ-doping to obtain an adjustable GMR device for magnetoelectronics applications.

  4. Transition from half metal to semiconductor in Li doped g-C4N3

    NASA Astrophysics Data System (ADS)

    Hashmi, Arqum; Hu, Tao; Hong, Jisang

    2014-03-01

    We have investigated the structural and magnetic properties of Li doped graphitic carbon nitride (g-C4N3) using the van der Waals density functional theory. A free standing g-C4N3 was known to show a half metallic state with buckling geometry, but this feature completely disappears in the presence of Li doping. Besides this structural modification, very interestingly, we have obtained that the Li doped g-C4N3 shows dramatic change in its electronic structure. Both ferromagnetic and nonmagnetic states are almost degenerated in one Li atom doped system. However, the transition from half metallic state to semiconductor is observed with further increase of Li concentration and the calculated energy gap is 1.97 eV. We found that Li impurity plays as a donor element and charge transfer from the Li atom to neighboring N atoms induces a band gap. Overall, we have observed that the electronic and magnetic properties of g-C4N3 are substantially modified by Li doping.

  5. Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

    PubMed Central

    Lee, Juwon; Subramaniam, Nagarajan Ganapathi; Agnieszka Kowalik, Iwona; Nisar, Jawad; Lee, Jaechul; Kwon, Younghae; Lee, Jaechoon; Kang, Taewon; Peng, Xiangyang; Arvanitis, Dimitri; Ahuja, Rajeev

    2015-01-01

    The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p-symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBixO1−x thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K-edge, probing directly the spin polarization of the O(2p) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBixO1−x at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBixO1−x doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states. PMID:26592564

  6. Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

    NASA Astrophysics Data System (ADS)

    Lee, Juwon; Subramaniam, Nagarajan Ganapathi; Agnieszka Kowalik, Iwona; Nisar, Jawad; Lee, Jaechul; Kwon, Younghae; Lee, Jaechoon; Kang, Taewon; Peng, Xiangyang; Arvanitis, Dimitri; Ahuja, Rajeev

    2015-11-01

    The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p-symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBixO1-x thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K-edge, probing directly the spin polarization of the O(2p) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBixO1-x at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBixO1-x doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states.

  7. Crystallization kinetics of amorphous tin-doped indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Ow-Yang, Cleva Wan

    The crystallization kinetics of amorphous tin-doped indium oxide thin films grown by dc magnetron sputtering and electron beam evaporation was investigated using time-resolved laser reflectivity in conjunction with TEM analyses. The as-grown films were established to be amorphous using glancing angle x-ray and selected area electron diffraction. The samples were then annealed at temperatures ranging from (˜111-167sp°C) some in a range of environments (oxidizing (Nsb2), strongly oxidizing (air), and reducing (wet/dry forming gas). Gross-sectional TEM analysis reveals a columnar as-sputtered microstructure that is retained after annealing to complete transformation. In contrast a-ITO films grown by evaporation show a uniformly dense microstructure. Annealing evaporated films in air produced films containing a wide distribution in grain sizes, while annealing in the more reducing environments yielded polycrystalline films with a narrow grain size distribution centered at 15 nm. Time-resolved laser reflectivity was an advantageous tool for monitoring the progress of the crystallization transformation because the technique generates quantifiable data while allowing real-time, non-contact observation. Plotting the transformation rate as a function of annealing temperature demonstrated the amorphous-to-crystalline transformation to be a thermally activated process. The energy required to crystallize sputtered a-ITO films in flowing Nsb2 is much lower than that for evaporated alpha-ITO films also in flowing Nsb2. XRD spectra of the as-sputtered a-ITO reveals the presence of an indium metal phase, which is not observed in the as-evaporated a-ITO films. The activation energy is most likely dependent on the presence of In metal, which serves as a catalyst for lowering the energy barrier. This is confirmed by the reduction in energy needed to transform evaporated a-ITO film in a reducing environment. In this study, the pre- and post-anneal microstructures were examined to

  8. Theoretical and experimental investigations of superconductivity. Amorphous semiconductors, superconductivity and magnetism

    NASA Technical Reports Server (NTRS)

    Cohen, M. H.

    1973-01-01

    The research activities from 1 March 1963 to 28 February 1973 are summarized. Major lectures are listed along with publications on superconductivity, superfluidity, electronic structures and Fermi surfaces of metals, optical spectra of solids, electronic structure of insulators and semiconductors, theory of magnetic metals, physics of surfaces, structures of metals, and molecular physics.

  9. A Solution‐Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    PubMed Central

    Kiefer, David; Yu, Liyang; Fransson, Erik; Gómez, Andrés; Primetzhofer, Daniel; Amassian, Aram; Campoy‐Quiles, Mariano

    2016-01-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution‐doped conjugated polymer poly(3‐hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer‐thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free‐standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends. PMID:28105396

  10. TOPICAL REVIEW: Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths

    NASA Astrophysics Data System (ADS)

    Bonanni, A.

    2007-09-01

    This review summarizes the state-of-the-art in the search for room temperature ferromagnetic semiconductors based on transition-metal- and rare-earth-doped nitrides. The major methods of synthesis are reported, together with an overview of the magnetic, structural, electrical and optical characterization of the materials systems, where available. The controversial experimental results concerning the actual value of the apparent Curie temperature in magnetically doped nitrides are highlighted, the inadequacy of standard characterization methods alone and the necessity of a possibly exhaustive structural investigation of the systems are proven and underlined. Furthermore, the dependence on the fabrication parameters of the magnetic ions incorporation into the semiconductor matrix is discussed, with special attention to the fundamental concepts of solubility limit and spinodal decomposition. It is argued that high-temperature ferromagnetic features in magnetically doped nitrides result from the presence of nanoscale regions containing a high concentration of the magnetic constituents. Various functionalities of these multicomponent systems are listed. Moreover, we give an extensive overview on the properties of single magnetic-impurity states in the nitride host. The understanding of this limit is crucial when considering the most recent suggestions for the control of the magnetic ion distribution—and consequently of the magnetic response—through the Fermi level engineering as well as to indicate roads for achieving high-temperature ferromagnetism in the systems containing a uniform distribution of magnetic ions.

  11. Intrinsic ferromagnetic properties in Cr-doped ZnO diluted magnetic semiconductors

    SciTech Connect

    Liu Yang; Yang Yanting; Yang Jinghai; Guan Qingfeng; Liu Huilian; Yang Lili; Zhang Yongjun; Wang Yaxin; Wei Maobin; Liu Xiaoyan; Fei Lianhua; Cheng Xin

    2011-05-15

    The Cr-doped zinc oxide (Zn{sub 1-x}Cr{sub x}O, 0{<=}x{<=}0.08) diluted magnetic semiconductors have been synthesized successfully by the sol-gel method. Investigations on magnetic, optical and structural properties of the produced samples have been done. Energy dispersive spectroscopy (EDS) shows the existence of Cr ion in the Cr-doped ZnO. The results of X-ray diffraction (XRD), the transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure (XAFS) indicate that the Cr ions are at least partially substitutionally incorporated into the crystal lattice of ZnO. The produced samples show good high-T{sub c} (Curie temperature) ferromagnetism (FM) in Cr-doped ZnO nanoparticles with Cr concentration of less than 5 at%. The results of photoluminescence (PL) further testify that FM is an intrinsic property of the Cr-doped ZnO nanoparticles. And the occurrence of FM should mainly contribute to the Cr doping. -- Graphical Abstract: As can be seen from the magnetic hysteresis loops of Zn{sub 1-x}Cr{sub x}O (x=0.01, 0.03, 0.05, and 0.08) at room temperature under 10 KOe, the samples show good high-T{sub c} ferromagnetism with Cr concentration of less than 5 at%. Display Omitted Highlights: {yields} Zn{sub 1-x}Cr{sub x}O(0{<=}x{<=}0.08) nanoparticles are successfully synthesized by sol-gel method. {yields} The Cr ions are substitutionally incorporated into the crystal lattice of ZnO. {yields} The Cr-doped ZnO nanoparticles show good high-T{sub c} ferromagnetism. {yields} The ferromagnetism is an intrinsic property of the Cr-doped ZnO nanoparticles.

  12. Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Inaba, Katsuhiko; Osada, Minoru; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

    2016-09-01

    Very thin aluminum-doped zinc oxide (AZO) films with a well-defined (0001) orientation and a surface roughness of 0.357 nm were deposited on amorphous glass substrates at a temperature of 200 °C by radio frequency magnetron sputtering, which are promising, particularly in terms of orientation evolution, surface roughness, and carrier transport, as buffer layers for the subsequent deposition of highly (0001)-oriented AZO polycrystalline films of 490 nm thickness by direct current (DC) magnetron sputtering. Sintered AZO targets with an Al2O3 content of 2.0 wt. % were used. DC magnetron sputtered AZO films on bare glass substrates showed a mixed (0001) and the others crystallographic orientation, and exhibited a high contribution of grain boundary scattering to carrier transport, resulting in reduced Hall mobility. Optimizing the thickness of the AZO buffer layers to 10 nm led to highly (0001)-oriented bulk AZO films with a marked reduction in the above contribution, resulting in AZO films with improved Hall mobility together with enhanced carrier concentration. The surface morphology and point defect density were also improved by applying the buffer layers, as shown by atomic force microscopy and Raman spectroscopy, respectively.

  13. Electrical analysis of amorphous corn starch-based polymer electrolyte membranes doped with LiI

    NASA Astrophysics Data System (ADS)

    Shukur, M. F.; Ibrahim, F. M.; Majid, N. A.; Ithnin, R.; Kadir, M. F. Z.

    2013-08-01

    In this work, polymer electrolytes have been prepared by doping starch with lithium iodide (LiI). The incorporation of 30 wt% LiI optimizes the room temperature conductivity of the electrolyte at (1.83 ± 0.47) × 10-4 S cm-1. Further conductivity enhancement to (9.56 ± 1.19) × 10-4 S cm-1 is obtained with the addition of 30 wt% glycerol. X-ray diffraction analysis indicates that the conductivity enhancement is due to the increase in amorphous content. The activation energy, Ea, of 70 wt% starch-30 wt% LiI electrolyte is 0.26 eV, while 49 wt% starch-21 wt% LiI-30 wt% glycerol electrolyte exhibits an Ea of 0.16 eV. Dielectric studies show that all the electrolytes obey non-Debye behavior. The power law exponent s is obtained from the variation of dielectric loss, ɛi, with frequency at different temperatures. The conduction mechanism of 70 wt% starch-30 wt% LiI electrolyte can be explained by the correlated barrier hopping model, while the conduction mechanism for 49 wt% starch-21 wt% LiI-30 wt% glycerol electrolyte can be represented by the quantum mechanical tunneling model.

  14. Atomistic Modeling of Mechanical Loss in Pure and Doped Amorphous Oxides

    NASA Astrophysics Data System (ADS)

    Trinastic, Jonathan; Hamdan, Rashid; Cheng, Hai-Ping

    2014-03-01

    The mechanical dissipation in the oxide coatings of many precision measurement systems is a major source of thermal noise that limits the performance of such devices. A good candidate for a coating material to reduce the mechanical loss is tantala (Ta2O5) doped with titania (TiO2). Here, we numerically calculate the mechanical loss (internal friction) in these and other promising oxides based on the double well model. Using classical, atomistic molecular dynamics simulations, we estimate the density of double wells in the energy landscape of the amorphous oxides and the distribution of barrier heights, in addition to the deformation potentials, the elastic constants and vibrational frequencies at both the bottom of the potential wells and at the saddle points, all of which are relevant to the internal friction calculation. We use two versions of the bisection method to find the double well densities and distributions. All methods used in these calculations are implemented in DL-POLY molecular dynamics simulation software. These calculations will provide experimentalists with a better guide into which material combinations might be better choice for reducing the mechanical loss.

  15. Direct measurement of the effective infrared dielectric response of a highly doped semiconductor metamaterial.

    PubMed

    Al Mohtar, Abeer; Kazan, Michel; Taliercio, Thierry; Cerutti, Laurent; Blaize, Sylvain; Bruyant, Aurélien

    2017-03-24

    We have investigated the effective dielectric response of a subwavelength grating made of highly doped semiconductors (HDS) excited in reflection, using numerical simulations and spectroscopic measurement. The studied system can exhibit strong localized surface resonances and has, therefore, a great potential for surface-enhanced infrared absorption (SEIRA) spectroscopy application. It consists of a highly doped InAsSb grating deposited on lattice-matched GaSb. The numerical analysis demonstrated that the resonance frequencies can be inferred from the dielectric function of an equivalent homogeneous slab by accounting for the complex reflectivity of the composite layer. Fourier transform infrared reflectivity (FTIR) measurements, analyzed with the Kramers-Kronig conversion technique, were used to deduce the effective response in reflection of the investigated system. From the knowledge of this phenomenological dielectric function, transversal and longitudinal energy-loss functions were extracted and attributed to transverse and longitudinal resonance modes frequencies.

  16. Direct measurement of the effective infrared dielectric response of a highly doped semiconductor metamaterial

    NASA Astrophysics Data System (ADS)

    Mohtar, Abeer Al; Kazan, Michel; Taliercio, Thierry; Cerutti, Laurent; Blaize, Sylvain; Bruyant, Aurélien

    2017-03-01

    We have investigated the effective dielectric response of a subwavelength grating made of highly doped semiconductors (HDS) excited in reflection, using numerical simulations and spectroscopic measurement. The studied system can exhibit strong localized surface resonances and has, therefore, a great potential for surface-enhanced infrared absorption (SEIRA) spectroscopy application. It consists of a highly doped InAsSb grating deposited on lattice-matched GaSb. The numerical analysis demonstrated that the resonance frequencies can be inferred from the dielectric function of an equivalent homogeneous slab by accounting for the complex reflectivity of the composite layer. Fourier transform infrared reflectivity (FTIR) measurements, analyzed with the Kramers–Kronig conversion technique, were used to deduce the effective response in reflection of the investigated system. From the knowledge of this phenomenological dielectric function, transversal and longitudinal energy-loss functions were extracted and attributed to transverse and longitudinal resonance modes frequencies.

  17. Optimally doped hybridization gap semiconductor FeGa3 as potential thermoelectric alloy*

    NASA Astrophysics Data System (ADS)

    Ponnambalam, Vijayabarathi; Morelli, Donald T.

    2014-03-01

    FeGa3, a hybridization gap semiconductor with a band gap of ~ 0.5 eV can be a potential thermoelectric material if optimally doped. Due to the involvement of d-band in the transport, high Seebeck coefficient is a possibility. To achieve the optimum doping level, Mn, Co and Zn containing FeGa3 alloys are being prepared either via the flux or solid state reaction method. Phase characterization will be carried out. Electrical and transport properties including resistivity, Seebeck and Hall coefficients and thermal conductivity will be measured over a wide temperature range of 80- 1000 K. These results will be presented and the potential of these compositions as thermoelectrics will be discussed.

  18. Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

    PubMed Central

    Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.

    2016-01-01

    The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355

  19. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    Baca, A.G.; Brown, D.J.; Donaldson, R.D.; Helgeson, W.D.; Hjalmarson, H.P.; Loubriel, G.M.; Mar, A.; O'Malley, M.W.; Thornton, R.L.; Zutavern, F.J.

    1999-08-05

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approximately}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  20. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  1. Modification of semiconductor or metal nanoparticle lattices in amorphous alumina by MeV heavy ions

    NASA Astrophysics Data System (ADS)

    Bogdanović Radović, I.; Buljan, M.; Karlušić, M.; Jerčinović, M.; Dražič, G.; Bernstorff, S.; Boettger, R.

    2016-09-01

    In the present work we investigate effects of MeV heavy ions (from 0.4 MeV Xe to 15 MeV Si) on regularly ordered nanoparticle (NP) lattices embedded in amorphous alumina matrix. These nanostructures were produced by self-assembling growth using magnetron-sputtering deposition. From grazing incidence small-angle x-ray scattering measurements we have found that the used MeV heavy ions do not change the NP sizes, shapes or distances among them. However, ions cause a tilt of the entire NP lattice in the direction parallel to the surface. The tilt angle depends on the incident ion energy, type and the applied fluence and a nearly linear increase of the tilt angle with the ion fluence and irradiation angle was found. This way, MeV heavy ion irradiation can be used to design custom-made NP lattices. In addition, grazing incidence small-angle x-ray scattering can be effectively used as a method for the determination of material redistribution/shift caused by the ion hammering effect. For the first time, the deformation yield in amorphous alumina was determined for irradiation performed at the room temperature.

  2. Oxidative stress induced by pure and iron-doped amorphous silica nanoparticles in subtoxic conditions.

    PubMed

    Napierska, Dorota; Rabolli, Virginie; Thomassen, Leen C J; Dinsdale, David; Princen, Catherine; Gonzalez, Laetitia; Poels, Katrien L C; Kirsch-Volders, Micheline; Lison, Dominique; Martens, Johan A; Hoet, Peter H

    2012-04-16

    Amorphous silica nanoparticles (SiO₂-NPs) have found broad applications in industry and are currently intensively studied for potential uses in medical and biomedical fields. Several studies have reported cytotoxic and inflammatory responses induced by SiO₂-NPs in different cell types. The present study was designed to examine the association of oxidative stress markers with SiO₂-NP induced cytotoxicity in human endothelial cells. We used pure monodisperse amorphous silica nanoparticles of two sizes (16 and 60 nm; S16 and S60) and a positive control, iron-doped nanosilica (16 nm; SFe), to study the generation of hydroxyl radicals (HO·) in cellular-free conditions and oxidative stress in cellular systems. We investigated whether SiO₂-NPs could influence intracellular reduced glutathione (GSH) and oxidized glutathione (GSSG) levels, increase lipid peroxidation (malondialdehyde (MDA) and 4-hydroxyalkenal (HAE) concentrations), and up-regulate heme oxygenase-1 (HO-1) mRNA expression in the studied cells. None of the particles, except SFe, produced ROS in cell-free systems. We found significant modifications for all parameters in cells treated with SFe nanoparticles. At cytotoxic doses of S16 (40-50 μg/mL), we detected weak alterations of intracellular glutathione (4 h) and a marked induction of HO-1 mRNA (6 h). Cytotoxic doses of S60 elicited similar responses. Preincubation of cells being exposed to SiO₂-NPs with an antioxidant (5 mM N-acetylcysteine, NAC) significantly reduced the cytotoxic activity of S16 and SFe (when exposed up to 25 and 50 μg/mL, respectively) but did not protect cells treated with S60. Preincubation with NAC significantly reduced HO-1 mRNA expression in cells treated with SFe but did not have any effect on HO-1 mRNA level in cell exposed to S16 and S60. Our study demonstrates that the chemical composition of the silica nanoparticles is a dominant factor in inducing oxidative stress.

  3. Electrical and optical conductivities of hole gas in p-doped bulk III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Mawrie, Alestin; Halder, Pushpajit; Ghosh, Barun; Ghosh, Tarun Kanti

    2016-09-01

    We study electrical and optical conductivities of hole gas in p-doped bulk III-V semiconductors described by the Luttinger Hamiltonian. We provide exact analytical expressions of the Drude conductivity, inverse relaxation time for various impurity potentials, Drude weight, and optical conductivity in terms of the Luttinger parameters γ1 and γ2. The back scattering is completely suppressed as a result of the helicity conservation of the heavy and light hole states. The energy dependence of the relaxation time for the hole states is different from the Brooks-Herring formula for electron gas in n-doped semiconductors. We find that the inverse relaxation time of heavy holes is much less than that of the light holes for Coulomb-type and Gaussian-type impurity potentials and vice-versa for a short-range impurity potential. The Drude conductivity increases non-linearly with the increase in the hole density. The exponent of the density dependence of the conductivity is obtained in the Thomas-Fermi limit. The Drude weight varies linearly with the density even in the presence of the spin-orbit coupling. The finite-frequency optical conductivity goes as √{ ω} , and its amplitude strongly depends on the Luttinger parameters. The Luttinger parameters can be extracted from the optical conductivity measurement.

  4. Application of photo-doping phenomenon in amorphous chalcogenide GeS2 film to optical device

    NASA Astrophysics Data System (ADS)

    Murakami, Yoshihisa; Arai, Katsuya; Wakaki, Moriaki; Shibuya, Takehisa; Shintaku, Toshihiro

    2015-03-01

    Photodoping phenomenon is observed when a double-layer consisting of an amorphous chalcogenide film (As2S3, GeS2, GeSe2 etc.) and a metal (Ag, Cu etc.) film is illuminated by light. The metal diffuses abnormally into the amorphous chalcogenide layer. Amorphous chalcogenide films of GeS2 with an Ag over layer exhibited large increase of refractive index through the abnormal doping of Ag by irradiating the light around the absorption edge of the GeS2 chalcogenide. In this study, we aimed the application of this effect for the fabrication of optical devices and fabricated various micro doped patterns by using a laser beam. Mask less pattering with refractive index modified films are possible by manipulating the scanning of the laser beam. Micro gratings were fabricated using a confocal laser microscope to work as both fabrication and observation system. Waveguides were also fabricated by scanning the laser beam for photodoping. Holographic gratings were fabricated by utilizing the photodoping of the two beam interference pattern, which showed the possibility to produce large scale optical devices or mass production.

  5. Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 °C

    NASA Astrophysics Data System (ADS)

    Chong, Eugene; Chun, Yoon Soo; Lee, Sang Yeol

    2010-09-01

    Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 °C. The a-SIZO TFT exhibited a field effect mobility of 21.6 cm2/V s and an on/off ratio of 107. The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage (Vth) compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in Vth in a-SIZO TFT without deteriorating mobility of higher than 21.6 cm2/V s.

  6. Electron states in amorphous semiconductor : localized to extended transition and transport

    NASA Astrophysics Data System (ADS)

    Dong, Jianjun; Drabold, David A.

    1996-11-01

    We study the electron states in a large (4096 atoms) and realistic model of amorphous diamond (B. Djordjevic, M. Thorpe and F. Wooten, Phys. Rev. B, 52) 5685, (1995) . We compute the full electronic density of states with the linear scaling Maximum Entropy method footnote D. A. Drabold and O. F. Sankey, Phys. Rev. Lett., 52 3631, (1993) . Approximately exponential band tails are observed at both valence- and conduction-bandfootnote J. Dong and D.A. Drabold, ( to appear ) Phys. Rev. B, 54 , (1996) . We also explicitly compute more than 700 electron states in the vincity of band-gap using a modified Lanczos approach. Within finite-size limitations, the localized to extended transition is illustrated for this model. The zero temperature dc conductivity is estimated from the Kubo formula.

  7. Far tails of the density of states in amorphous organic semiconductors

    SciTech Connect

    Novikov, S. V.

    2015-10-28

    Far tails of the density of state (DOS) are calculated for the simple models of organic amorphous material, the model of dipolar glass and model of quadrupolar glass. It was found that in both models far tails are non-Gaussian. In the dipolar glass model, the DOS is symmetric around zero energy, while for the model of quadrupolar glass, the DOS is generally asymmetric and its asymmetry is directly related to the particular geometry of quadrupoles. Far tails of the DOS are relevant for the quasi-equilibrium transport of the charge carriers at low temperature. Asymmetry of DOS in quadrupolar glasses means a principal inequivalence of the random energy landscape for the transport of electrons and holes. Possible effect of the non-Gaussian shape of the far tails of the DOS on the temperature dependence of carrier drift mobility is discussed.

  8. Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

    NASA Astrophysics Data System (ADS)

    Ide, Keisuke; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Hosono, Hideo

    2012-04-01

    Amorphous In-Ga-Zn-O (a-IGZO) is expected as a backplane transistor material to drive next-generation flat-panel and flexible displays. It has been elucidated that thermal annealing even at low temperatures <200 °C reduces deep subgap defects and those at ≥300 °C further improve device characteristics, stability, and uniformity. These temperatures are much lower than the reported crystallization temperature (TX ˜ 600 °C). In this work, we investigate effects of thermal annealing on the structural and optical properties of a-IGZO thin films. We performed classical molecular dynamics simulation (CMD) and optical interference analyses including spectroscopic ellipsometry (SE). CMD reproduced the x-ray diffraction pattern of a-IGZO and exhibited a glass transition. Experimentally, it was found that TX depends largely on deposition methods and conditions, probably due to different chemical compositions. Sputter-deposited a-IGZO films exhibited onset TX ˜ 600 °C and crystalline volume fraction XC increased linearly from 600 °C. 1.2% of film densification occurred even at 600 °C due to crystallization. High-temperature in situ SE measurements did not detect a symptom of a glass transition temperature (Tg) presumably because the TX is close to Tg similar to the case of amorphous metals.

  9. Platinum nanoparticles on gallium nitride surfaces: effect of semiconductor doping on nanoparticle reactivity.

    PubMed

    Schäfer, Susanne; Wyrzgol, Sonja A; Caterino, Roberta; Jentys, Andreas; Schoell, Sebastian J; Hävecker, Michael; Knop-Gericke, Axel; Lercher, Johannes A; Sharp, Ian D; Stutzmann, Martin

    2012-08-01

    Platinum nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid systems for the electronic control of catalytic activity via electronic interactions with the semiconductor support. In situ oxidation and reduction were studied with high pressure photoemission spectroscopy. The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the chemical composition and oxygen affinity of supported nanoparticles under X-ray irradiation. For as-deposited Pt cuboctahedra supported on n-type GaN, a higher fraction of oxidized surface atoms was observed compared to cuboctahedral particles supported on p-type GaN. Under an oxygen atmosphere, immediate oxidation was recorded for nanoparticles on n-type GaN, whereas little oxidation was observed for nanoparticles on p-type GaN. Together, these results indicate that changes in the Pt chemical state under X-ray irradiation depend on the type of GaN doping. The strong interaction between the nanoparticles and the support is consistent with charge transfer of X-ray photogenerated free carriers at the semiconductor-nanoparticle interface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and electronic control of catalysis.

  10. Modification on upconversion luminescence of Er3 +-Yb3 + co-doped BiOCl semiconductor nanosheets through interaction between nanohost and doping lanthanide

    NASA Astrophysics Data System (ADS)

    Xu, Zuyuan; Li, Yongjin; Song, Yapai; Zhang, Xiangzhou; Hu, Rui; Qiu, Jianbei; Yang, Zhengwen; Song, Zhiguo

    2017-04-01

    We reported the upconversion luminescence (UCL) properties of Er3 +-Yb3 + co-doped BiOCl semiconductor nanosheets synthesized by hydrothermal method. Under 980 nm excitation, the red and green UCL of Er3 + ions were observed to be populated by a four and three-photon process in the case of absent or low concentration Yb3 + dopant. However, an increase of Yb3 + dopants show a completely opposite effect on the emission intensity of red and green one, accompanying with the change of upconverting process. It indicates that the red-shifting absorption edge of semiconductor and the super saturation UC processes involved with Yb3 + and Er3 + doping in BiOCl semiconductor nanosheets, respectively, are mainly responsible for the above UC phenomena.

  11. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  12. Models of optical absorption in amorphous semiconductors at the absorption edge — A review and re-evaluation

    NASA Astrophysics Data System (ADS)

    Ibrahim, A.; Al-Ani, S. K. J.

    1994-08-01

    Davis-Mott and Tauc models of optical absorption at the absorption edge in the high absorption coefficient region (104cm-1) are carefully reviewed with regard to their theoretical foundations, assumptions, mathematical derivations, and results. The full implications of these models are exploited, and it is found that the Davis-Mott model for negligible matrix elements between localised states could account for the cubic power law behaviour of with photon energy of some amorphous semiconductors such as a-Si. A fractional power law to find the optical band gapE opt, of the form [αħω ∝ (ħω-E opt)r; 2≤r≤3] based on Davis-Mott model is proposed in which the indexr can be a function of disorder. The Tauc model has further been extended to the case of negligible matrix elements between localised states, in which the same square power law forα vs.ħω with the same meaning of the optical gap as in the original Tauc model has resulted. A consideration of the case of unequal matrix elements for those transitions between localised states and those between extended states is also included. The meaning ofE opt has been re-assessed and it is emphasized that it is an extrapolation of delocalised states to the zero of the density of states rather than a threshold energy for the onset of some kind of optical transitions.

  13. Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

    NASA Astrophysics Data System (ADS)

    Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

    2016-12-01

    We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

  14. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    PubMed Central

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, B.; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-01-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned. PMID:26670421

  15. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    SciTech Connect

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

  16. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    DOE PAGES

    Malasi, A.; Taz, H.; Farah, A.; ...

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergentmore » semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.« less

  17. Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Hsu, H. S.; Chung, P. Y.; Zhang, J. H.; Sun, S. J.; Chou, H.; Su, H. C.; Lee, C. H.; Chen, J.; Huang, J. C. A.

    2010-07-01

    We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp2 states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field.

  18. Frequency and time domain studies of magneto-transport and charge trapping in amorphous organic semiconductors

    NASA Astrophysics Data System (ADS)

    Rybicki, James Edward

    The focus of this thesis is a recently discovered organic magnetoresistance (OMAR) whose underlying mechanism remains much debated. As an introduction, the field of organic electronic is briefly discussed focusing mainly on organic light emitting diodes, the devices in which OMAR was first discovered. Important findings related to OMAR from prior work are highlighted and several proposed models for the underlying mechanism are discussed. The frequency dependence of OMAR along with capacitance spectroscopy are studied to help distinguish between proposed models. The limit frequency for OMAR devices is obtained. Magnetic field dependent time-of-flight spectroscopy is used to determine whether applied magnetic fields modify the photocarrier generation efficiency in OMAR devices, their mobility, or both. These results are used to compare the bipolaron model and the triplet-polaron scattering mechanism. As it is generally agreed that OMAR is a spintronic effect, the role of spin-orbit coupling in polymers was studied to help understand its importance in the spin-transport of organic semiconductors. The possibility of spin-orbit induced spin precession is examined and a phonon assisted spin-flip process is proposed. We show OMAR may be enhanced by exposure to x-ray radiation. This is shown to be related to the production of traps. The effect on other device characteristics including turn-voltage and quantum efficiency is also examined. The role of trap production in enhancing OMAR is explained using the biopolaron model.

  19. Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation

    NASA Astrophysics Data System (ADS)

    Lee, Sunghwan; Paine, David C.

    2013-02-01

    The mechanism of native defect doping in amorphous In-Zn-O (a-IZO) has not previously been established but is likely associated with native oxygen defect doping. We have used high pressure oxidation and defect equilibrium analysis to show a -1/6 power dependence of carrier density on oxygen fugacity in a-IZO. This dependency is predicted for oxygen vacancy-like donor defects. Extrapolation of equilibrium constants established at high pressures to atmospheric pressure reveals that the equilibrium carrier density in a-IZO at 200 °C is higher (>1020/cm3) than typical as-deposited channel carrier densities (<1017/cm3). This is consistent with observed increases in channel carrier density and negative threshold voltage shift in annealed a-IZO thin film transistor devices.

  20. Enhancement ZnO nanofiber as semiconductor for dye-sensitized solar cells by using Al doped

    NASA Astrophysics Data System (ADS)

    Sutanto, Bayu; Arifin, Zainal; Suyitno, Hadi, Syamsul; Pranoto, Lia Muliani; Agustia, Yuda Virgantara

    2016-03-01

    The purpose of this research is to produce Al-doped ZnO (AZO) nanofibers in order to enhance the performance of Dye-Sensitized Solar Cell (DSSC). AZO nanofiber semiconductor was manufactured by electrospinning process of Zinc Acetate Dehydrate (Zn(CH3COO)2) solution and precursor of Polyvinyl Acetate (PVA). The doping process of Al was built by dissolving 0-4 wt% in concentrations of AlCl3 to Zinc Acetate. AZO green fiber was sintered at temperature 500°C for an hour. The result shows that Al doped ZnO had capability to increase the electrical conductivity of semiconductor for doping 0, 1, 2, 3, and 4 wt% for 2,07×10-3; 3,71×10-3; 3,59 ×10-3; 3,10 ×10-3 and 2,74 ×10-3 S/m. The best performance of DSSC with 3 cm2 active area was obtained at 1 wt% Al-ZnO which the value of VOC, ISC, FF, and efficiency were 508,43 mV, 3,125 mA, 38,76%, and 0,411% respectively. These coincide with the electrical conductivity of semiconductor and the crystal size of XRD result that has the smallest size as compared to other doping variations.

  1. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

    DOE PAGES

    Novikov, S. V.; Ting, M.; Yu, K. M.; ...

    2014-10-01

    In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.

  2. Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures.

    PubMed

    Sarau, George; Heilmann, Martin; Bashouti, Muhammad; Latzel, Michael; Tessarek, Christian; Christiansen, Silke

    2017-03-22

    While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.

  3. Experimental verification of epsilon-near-zero plasmon polariton modes in degenerately doped semiconductor nanolayers.

    PubMed

    Campione, Salvatore; Kim, Iltai; de Ceglia, Domenico; Keeler, Gordon A; Luk, Ting S

    2016-08-08

    We investigate optical polariton modes supported by subwavelength-thick degenerately doped semiconductor nanolayers (e.g. indium tin oxide) on glass in the epsilon-near-zero (ENZ) regime. The dispersions of the radiative (R, on the left of the light line) and non-radiative (NR, on the right of the light line) ENZ polariton modes are experimentally measured and theoretically analyzed through the transfer matrix method and the complex-frequency/real-wavenumber analysis, which are in remarkable agreement. We observe directional near-perfect absorption using the Kretschmann geometry for incidence conditions close to the NR-ENZ polariton mode dispersion. Along with field enhancement, this provides us with an unexplored pathway to enhance nonlinear optical processes and to open up directions for ultrafast, tunable thermal emission.

  4. Amorphous flower-like molybdenum-sulfide-@-nitrogen-doped-carbon-nanofiber film for use in the hydrogen-evolution reaction.

    PubMed

    Zhang, Xiaoyan; Li, Libo; Guo, Yaxiao; Liu, Dong; You, Tianyan

    2016-06-15

    A novel amorphous flower-like molybdenum sulfides@nitrogen doped carbon nanofibers (MoSx@NCNFs) films are successfully synthesized by combining electrospinning, carbonization and a mild hydrothermal process. NCNFs, as a conductive substrate, can accelerate the electron transfer rate and depress the aggregation of MoSx nanoparticles. The resultant amorphous flower-like MoSx on NCNFs exposes abundant S(2-)/S2(2-) active edge sites which is of great importance for hydrogen evolution reaction (HER) catalytic performance. Electrochemical measurements demonstrate the superior electrocatalytic activity of MoSx@NCNFs toward HER deriving from the synergistic effect between NCNFs and amorphous MoSx. The overpotential is only 137 mV to reach the current density of 10 mA cm(-2) with a Tafel slope of 41 mV decade(-1) at MoSx@NCNFs. Meanwhile, MoSx@NCNFs exhibits satisfactory long-time stability for HER. Noteworthy, the obtained composites show a free-standing structure which can be directly used as electrode materials. This work provides a feasible way to design promising noble-metal free electrocatalysts in the aspect of energy conversion.

  5. Investigating the thermal stability of electron transport properties in modulation-doped semiconductor heterostructure systems

    NASA Astrophysics Data System (ADS)

    Pilgrim, Ian; Scannell, Billy; See, Andrew; Montgomery, Rick; Morse, Peter; Fairbanks, Matt; Marlow, Colleen; Linke, Heiner; Farrer, Ian; Ritchie, David; Hamilton, Alex; Micolich, Adam; Eaves, Laurence; Taylor, Richard

    2013-03-01

    Since the 1950s, materials scientists have pursued the fabrication of solid-state heterostructure (HS) devices of sufficient purity to replicate electron interference effects originally observed in vacuum. The ultimate goal of HS engineering is to create a semiconductor ``billiard table'' in which electrons travel ballistically in a 2-D plane--that is, with scattering events minimized such that the electron's mean free path exceeds the device size. For the past two decades, the modulation-doped (MD) HS architecture has yielded devices supporting very high electron mobilities. In this architecture, ionized dopants are spatially removed from the plane of the electrons, such that their influence on electron trajectories is felt through presumably negligible small-angle scattering events. However, we observe that thermally induced charge redistribution in the doped layers of AlGaAs/GaAs and GaInAs/InP MD heterostructures significantly alters electron transport dynamics as measured by magnetoconductance fluctuations. This result demonstrates that small-angle scattering plays a far larger role than expected in influencing conduction properties. Funded by the Office of Naval Research, US Air Force, Australian Research Council, and Research Corporation for Science Advancement

  6. Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Abdel-Galil, A.; Balboul, M. R.; Sharaf, A.

    2015-11-01

    In the present work undoped and Mn doped ZnO nanoparticles (ZnO:Mn), diluted magnetic semiconductors, were successfully synthesized by the sol-gel method at room temperature. The morphology of ZnO nanoparticles constituted by flower-like structures with hexagonal morphologies that changed significantly after the incorporation of Mn. Rietveld refinements results showed that Mn ions are successfully doped into ZnO matrix without altering its wurtzite phase. Meanwhile, Raman spectroscopy analyses confirm the wurtzite structure of undoped ZnO and ZnO:Mn nanoparticles. The lattice parameters increase with increasing Mn content due to the large ionic radius of Mn2+ compared to that of Zn2+. Electron spin resonance measurements were performed to gain information about oxidation state and site occupancy of the magnetic Mn ions in the ZnO lattice. Moreover, UV-vis absorption spectra have been utilized to calculate the optical band gap of the undoped ZnO and ZnO:Mn nanoparticles before and after different γ-irradiation doses. The band gap of ZnO:Mn (2%) is 2.62 eV which is noticeably smaller than the 3.26 eV of undoped ZnO. The thermal decomposition properties of the prepared nanoparticle samples were also studied using simultaneous Thermogravimetric analysis in temperature range from 30 to 500 °C.

  7. A multi-scale approach to the electronic structure of doped semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Sinai, Ofer; Hofmann, Oliver T.; Rinke, Patrick; Scheffler, Matthias; Heimel, Georg; Kronik, Leeor

    2015-03-01

    The inclusion of the global effects of semiconductor doping poses a unique challenge for first-principles simulations, because the typically low concentration of dopants renders an explicit treatment intractable. Furthermore, the width of the space-charge region (SCR) at charged surfaces often exceeds realistic supercell dimensions. We present a multi-scale technique that addresses these difficulties. It is based on the introduction of excess charge, mimicking free charge carriers from the SCR, along with a fixed sheet of counter-charge mimicking the SCR-related field. Self-consistency is obtained by imposing charge conservation and Fermi level equilibration between the bulk, treated semi-classically, and the electronic states of the slab/surface, which are treated quantum-mechanically. The method, called CREST - the Charge-Reservoir Electrostatic Sheet Technique - can be used with standard electronic structure codes. We validate CREST using a simple tight-binding model, which allows for comparison of its results with calculations encompassing the full SCR explicitly. We then employ it with density functional theory, obtaining insight into the doping dependence of the electronic structures of the metallic clean-cleaved Si(111) surface and its semiconducting (2x1) reconstructions.

  8. Second-order optical susceptibility in doped III-V piezoelectric semiconductors in the presence of a magnetostatic field

    NASA Astrophysics Data System (ADS)

    Lal, B.; Aghamkar, P.; Kumar, S.; Kashyap, M. K.

    2011-02-01

    A detailed analytical investigation of second-order optical susceptibility has been made in moderately doped III-V weakly piezoelectric semiconductor crystal, viz. n-InSb, in the absence and presence of an external magnetostatic field, using the coupled mode theory. The second-order optical susceptibility arises from the nonlinear interaction of a pump beam with internally generated density and acoustic perturbations. The effect of doping concentration, magnetostatic field and pump intensity on second-order optical susceptibility of III-V semiconductors has been studied in detail. The numerical estimates are made for n-type InSb crystals duly shined by pulsed 10.6 μm CO2 laser and efforts are made towards optimising the doping level, applied magnetostatic field and pump intensity to achieve a large value of second-order optical susceptibility and change of its sign. The enhancement in magnitude and change of sign of second-order optical susceptibility, in weakly piezoelectric III-V semiconductor under proper selection of doping concentration and externally applied magnetostatic field, confirms the chosen nonlinear medium as a potential candidate material for the fabrication of nonlinear optical devices. In particular, at B 0 = 14.1 T, the second-order susceptibility was found to be 3.4 × 10-7 (SI unit) near the resonance condition.

  9. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    NASA Astrophysics Data System (ADS)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  10. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    SciTech Connect

    Zhang, Tian Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  11. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-12-01

    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  12. Effects of Al, Ga-DOPING on Transparent Conducting Properties of Amorphous ZnO-SnO2 Films

    NASA Astrophysics Data System (ADS)

    Moriga, Toshihiro; Nishimura, Yusuke; Suketa, Hiroshi; Murai, Kei-Ichiro; Nogami, Kazuhiro; Tominaga, Kikuo; Nakabayashi, Ichiro

    ZnOSnO2 thin films were deposited on glass substrates (Corning#1737) by DC magnetron sputtering. In this works, we examined a doping effect on a ZnO target on transparent conducting properties. ZnO:Al(4wt%), and ZnO:Ga(6wt%) targets were used for a dopant-free ZnO target. Substrate temperature was held at 250°C. The current ratio δ was defined as IZn/IZ+ISn (ZnO target current divided by the sum of ZnO and SnO2 target currents). Compositions of as-deposited films were changed with the current ratio δ. In the ZnO-SnO2 system, amorphous transparent films appeared over the range of 0.33≤δ≤0.73. On the other hand, in the ZnO:Al(4wt%)-SnO2 and ZnO:Ga(6wt%)-SnO2 systems, they appeared over the range of 0.20≤δ≤0.80 and 0.33≤δ≤0.80, ≤δ≤ respectively. The minimum resistivity of amorphous films was about 3.0×10-2 Ωcm for all the systems. Al, Ga doping effect on film resistivity was not clear very much. But optical transparencies were 80-90% in visible region, 10% higher than those of ZnO-SnO2 system at average. Optical band gap for the films with the same current ratio δ also was enhanced by the Al, Ga doping.

  13. Amorphous sub-nanometre Tb-doped SiO(x)N(y)/SiO2 superlattices for optoelectronics.

    PubMed

    Ramírez, Joan Manel; Wojcik, Jacek; Berencén, Yonder; Ruiz-Caridad, Alícia; Estradé, Sònia; Peiró, Francesca; Mascher, Peter; Garrido, Blas

    2015-02-27

    Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high temperature of 1000 °C. In addition, transparent indium tin oxide (ITO) electrodes were deposited by electron beam evaporation using a shadow mask approach to allow for the optoelectronic characterization of superlattices. Tb(3+) luminescent spectral features were obtained using three different excitation sources: UV laser excitation (photoluminescence (PL)), under a bias voltage (electroluminescence (EL)) and under a highly energetic electron beam (cathodoluminescence (CL)). All techniques displayed Tb(3+) inner transitions belonging to (5)D4 levels except for the CL spectrum, in which (5)D3 transition levels were also observed. Two competing mechanisms were proposed to explain the spectral differences observed between PL (or EL) and CL excitation: the population rate of the (5)D3 state and the non-radiative relaxation rate of the (5)D3-(5)D4 transition due to a resonant OH-mode. Moreover, the large number of interfaces (trapping sites) that electrons have to get through was identified as the main reason for observing a bulk-limited charge transport mechanism governed by Poole-Frenkel conduction in the J-V characteristic. Finally, a linear EL-J dependence was measured, with independent spectral shape and an EL onset voltage as low as 6.7 V. These amorphous sub-nanometre superlattices are meant to provide low-cost solutions in different areas including sensing, photovoltaics or photonics.

  14. Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices for optoelectronics

    NASA Astrophysics Data System (ADS)

    Ramírez, Joan Manel; Wojcik, Jacek; Berencén, Yonder; Ruiz-Caridad, Alícia; Estradé, Sònia; Peiró, Francesca; Mascher, Peter; Garrido, Blas

    2015-02-01

    Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high temperature of 1000 °C. In addition, transparent indium tin oxide (ITO) electrodes were deposited by electron beam evaporation using a shadow mask approach to allow for the optoelectronic characterization of superlattices. Tb3+ luminescent spectral features were obtained using three different excitation sources: UV laser excitation (photoluminescence (PL)), under a bias voltage (electroluminescence (EL)) and under a highly energetic electron beam (cathodoluminescence (CL)). All techniques displayed Tb3+ inner transitions belonging to 5D4 levels except for the CL spectrum, in which 5D3 transition levels were also observed. Two competing mechanisms were proposed to explain the spectral differences observed between PL (or EL) and CL excitation: the population rate of the 5D3 state and the non-radiative relaxation rate of the 5D3-5D4 transition due to a resonant OH-mode. Moreover, the large number of interfaces (trapping sites) that electrons have to get through was identified as the main reason for observing a bulk-limited charge transport mechanism governed by Poole-Frenkel conduction in the J-V characteristic. Finally, a linear EL-J dependence was measured, with independent spectral shape and an EL onset voltage as low as 6.7 V. These amorphous sub-nanometre superlattices are meant to provide low-cost solutions in different areas including sensing, photovoltaics or photonics.

  15. Cobalt doped titanium dioxide, a possible candidate for dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Rumaiz, Abdul K.

    Semiconductor spintronics is a promising new area of research where both the spin and transport of mobile charge carriers are manipulated in a quest to make faster electronic devices. The most important challenge in this exciting field is the integration of spintronics into conventional semiconductor devices. This requires a successful fabrication of a room temperature ferromagnetic semiconductor into which we can effectively generate and inject spin-polarized currents. In the first part of this study, it is our goal to investigate the structural, magnetic, transport, and electronic properties of Co doped and undoped TiO 2 thin films synthesized by pulsed laser deposition (PLD). For that purpose, TiO2 was doped with different Co concentrations and the role of oxygen vacancies in determining the structural, magnetic, and electronic properties wad studied. Four different doping levels (starting target composition 1,2,3 and 6%) of Co in TiO2 films have been prepared. All the targets for laser ablation were prepared by standard solid-state route. In each doping level, different vacancy levels are also investigated by ablating the films under two different oxygen partial pressures. All the samples prepared have shown room temperature ferromagnetism. Crystal structure, transport, and magnetic properties of CoxTi1-xO2-delta (0 ≤ x ≤ 0.06) thin films are investigated and are found to have a strong dependence on the oxygen partial pressure. X-Ray Diffraction (XRD) data reveal the presence of mixed phase material containing both anatase and rutile. However, these phases intertransform with the change in the oxygen partial pressure during the growth of the films. Both X-ray Photoemission Spectroscopy (XPS) and X-ray Absorption Near Edge Spectroscopy (XANES) confirm the oxidation state of Co as +2, suggesting a well-substituted Co in the TiO2 matrix. In addition to that, the asymmetry in the O 1s core level peak also suggests the presence of oxygen vacancies. The transport

  16. Amorphous boron-doped sodium titanates hydrates: Efficient and reusable adsorbents for the removal of Pb(2+) from water.

    PubMed

    di Bitonto, Luigi; Volpe, Angela; Pagano, Michele; Bagnuolo, Giuseppe; Mascolo, Giuseppe; La Parola, Valeria; Di Leo, Paola; Pastore, Carlo

    2017-02-15

    Amorphous titanium hydroxide and boron-doped (B-doped) sodium titanates hydrates were synthetized and used as adsorbents for the removal of Pb(2+) from water. The use of sodium borohydride (NaBH4) and titanium(IV) isopropoxide (TTIP) as precursors permits a very easy synthesis of B-doped adsorbents at 298K. The new adsorbent materials were first chemically characterized (XRD, XPS, SEM, DRIFT and elemental analysis) and then tested in Pb(2+) adsorption batch experiments, in order to define kinetics and equilibrium studies. The nature of interaction between such sorbent materials and Pb(2+) was also well defined: besides a pure adsorption due to hydroxyl interaction functionalities, there is also an ionic exchange between Pb(2+) and sodium ions even working at pH 4.4. Langmuir model presented the best fitting with a maximum adsorption capacity up to 385mg/g. The effect of solution pH and common ions (i.e. Na(+), Ca(2+) and Mg(2+)) onto Pb(2+) sorption were also investigated. Finally, recovery was positively conducted using EDTA. Very efficient adsorption (>99.9%) was verified even using tap water spiked with traces of Pb(2+) (50ppb).

  17. Resistive Switching Characteristics of 10-nm-Thick Amorphous HoScO x Films Doped with Nb and Zn

    NASA Astrophysics Data System (ADS)

    Wang, Sea-Fue; Hsu, Chia-Chun; Chu, Jinn P.; Liu, Yi-Xin; Chen, Liang-Wei

    2017-03-01

    In this study, 10-nm rare-earth metal-oxide (REMO) films, namely, pure HoScO x (HSO) and HoScO x doped with Nb (HSO-Nb) and Zn (HSO-Zn), were deposited to build resistive random access memory (RRAM) devices with a Pt/REMO/Pt structure using radio frequency magnetron sputtering. The results of x-ray diffraction and transmission electron microscopy showed that all as-deposited REMO films are featureless microstructures lacking long-range order. In all RRAM devices, layer structures were well adhered to each other with relatively smooth interfaces and no cracks or holes were observed. Hall measurements demonstrated n-type conduction in the as-deposited films. The addition of Nb and Zn increased carrier concentration and mobility of the HSO films and reduced electrical resistivity. The former was possibly caused by the electronic compensation of NbSc ··, thereby triggering the formation of polarons, and the latter was probably due to the increase in concentration of oxygen vacancies associated with acceptor doping. The RRAM devices revealed unipolar switching behavior characterized by a resistance ratio of more than three orders of magnitude, good endurance, and a long retention time. The switching behavior of the RRAM with amorphous HSO films was altered by the doping species. Doping with Nb and Zn decreased the forming voltage, facilitated the use of a smaller switching voltage, and increased the resistance ratio of high- and low-resistance states. The conduction mechanisms for the low resistive state and high resistive state were dominated by Ohmic conduction and trap-controlled space-charge-limited current mechanisms, respectively.

  18. Resistive Switching Characteristics of 10-nm-Thick Amorphous HoScO x Films Doped with Nb and Zn

    NASA Astrophysics Data System (ADS)

    Wang, Sea-Fue; Hsu, Chia-Chun; Chu, Jinn P.; Liu, Yi-Xin; Chen, Liang-Wei

    2016-12-01

    In this study, 10-nm rare-earth metal-oxide (REMO) films, namely, pure HoScO x (HSO) and HoScO x doped with Nb (HSO-Nb) and Zn (HSO-Zn), were deposited to build resistive random access memory (RRAM) devices with a Pt/REMO/Pt structure using radio frequency magnetron sputtering. The results of x-ray diffraction and transmission electron microscopy showed that all as-deposited REMO films are featureless microstructures lacking long-range order. In all RRAM devices, layer structures were well adhered to each other with relatively smooth interfaces and no cracks or holes were observed. Hall measurements demonstrated n-type conduction in the as-deposited films. The addition of Nb and Zn increased carrier concentration and mobility of the HSO films and reduced electrical resistivity. The former was possibly caused by the electronic compensation of NbSc ··, thereby triggering the formation of polarons, and the latter was probably due to the increase in concentration of oxygen vacancies associated with acceptor doping. The RRAM devices revealed unipolar switching behavior characterized by a resistance ratio of more than three orders of magnitude, good endurance, and a long retention time. The switching behavior of the RRAM with amorphous HSO films was altered by the doping species. Doping with Nb and Zn decreased the forming voltage, facilitated the use of a smaller switching voltage, and increased the resistance ratio of high- and low-resistance states. The conduction mechanisms for the low resistive state and high resistive state were dominated by Ohmic conduction and trap-controlled space-charge-limited current mechanisms, respectively.

  19. Local structure analysis of diluted magnetic semiconductor Co and Al co-doped ZnO nanoparticles

    SciTech Connect

    Hyodo, K.; Morimoto, S.; Yamazaki, T.; Ishikawa, T.; Ichiyanagi, Y.; Utsumi, J.

    2016-02-01

    In this study, Co and Al ions co-doped ZnO nanoparticles (Zn(Al, Co)O NPs) were prepared by our original chemical preparation method. The obtained samples prepared by this method, were encapsulated in amorphous SiO{sub 2}. X-ray diffraction (XRD) results showed Zn(Al, Co)O NPs had a single-phase nature with hexagonal wurtzite structure. These particle sizes could be controlled to be approximately 30 nm. We investigate the effect that the increase in the carrier has on the magnetization by doping Al to Co-doped ZnO NPs. The local structures were qualitatively analyzed using X-ray absorption fine structure (XAFS) measurements.

  20. Improved Radio Frequency Power Characteristics of Complementary Metal-Oxide-Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor

    NASA Astrophysics Data System (ADS)

    Chang, Tsu; Kao, Hsuan-ling; Chen, Y. J.; Chin, Albert

    2010-03-01

    We have characterized and modeled the radio frequency (RF) power performance of a 0.18 µm asymmetric-lightly-doped-drain metal-oxide-semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 µm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.

  1. Preparation, Characterization, Electrical and Magnetic Properties of Mn-Doped Dilute Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Malik, Samiksha; Mohite, Komal; Naik, Pranav; Tangsali, R. B.

    2016-10-01

    Nanoparticle dilute magnetic semiconductors (DMS) are becoming increasingly important due to their possible applications in spintronics, an emerging field where the conduction process in the materials is a spin-based process. Nanoparticles of Mn-doped ZnO (DMS) material with general formula Zn1-xMnxO (x=0.05,0.15,0.2) were prepared by opting single stage combustion synthesis process. The samples characterized, exhibited formation of monophasic nanoparticles of the sample with average particle size ranging between 17 nm to 23 nm. The calculations of energy bandgap made from UV absorption spectra showed variation of the bandgap from 2.18 eV to 2.32 eV. The magnetic measurements (VSM) made on the samples confirmed formation of a single diamagnetic (Zn0.95Mn0.05O) and two namely (Zn0.85Mn0.15O) (Zn0.8Mn0.2O) paramagnetic samples. It is interesting to see that all the three magnetic profiles exhibit hysteresis type behavior both in diamagnetic form and paramagnetic form. The resistivity of the samples was of the order of 1010 Ohm-cm (Ω-cm) at lower temperatures. Temperature-dependent resistivity curves exhibited peaking behavior for all the three samples which is very interesting. Temperature-dependent thermo-power profiles give an indication of n-type semiconductor behavior with significantly deep and broad minima around 100∘C which becomes sharper for sample with higher Mn concentration.

  2. [Characterization of pure and doped amorphous WO3 films by Raman spectroscopy].

    PubMed

    Lü, Gang; Wu, Yong-Gang; Wu, He-Yun; Xia, Zi-Huan; Liu, Ren-Chen

    2012-11-01

    Pure, TiO2-doped and TiO2/Ag-doped WO3 films were prepared by evaporation and electron beam evaporating. Raman spectroscopy and chronoamperometry were used to characterize the electrochromic properties of the samples. The correlation between the relative intensity of the Raman peaks, corresponding to the Raman sharp peak of the crystalline phase at 810 cm(-1) is negative, that is to say the higher the relative intensity of the Raman peaks, the smaller the coloration efficiency.

  3. Direct laser writing of topographic features in semiconductor-doped glass

    NASA Astrophysics Data System (ADS)

    Smuk, Andrei Y.

    2000-11-01

    Patterning of glass and silica surfaces is important for a number of modern technologies, which depend on these materials for manufacturing of both final products, such as optics, and prototypes for casting and molding. Among the fields that require glass processing on microscopic scale are optics (lenses and arrays, diffractive/holographic elements, waveguides), biotechnology (capillary electrophoresis chips and biochemical libraries) and magnetic media (landing zones for magnetic heads). Currently, standard non-laser techniques for glass surface patterning require complex multi-step processes, such as photolithography. Work carried out at Brown has shown that semiconductor- doped glasses (SDG) allow a single-step patterning process using low power continuous-wave visible lasers. SDG are composite materials, which consist of semiconductor crystallites embedded into glass matrix. In this study, borosilicate glasses doped with CdSxSe1-x nanocrystals were used. Exposure of these materials to a low-power above- the-energy gap laser beam leads to local softening, and subsequent expansion and rapid solidification of the exposed volume, resulting in a nearly spherical topographic feature on the surface. The effects of the incident power, beam configuration, and the exposure time on the formation and final parameters of the microlens were studied. Based on the numerical simulation of the temperature distribution produced by the absorbed Gaussian beam, and the ideas of viscous flow at the temperatures around the glass transition point, a model of lens formation is suggested. The light intensity distribution in the near-field of the growing lens is shown to have a significant effect on the final lens height. Fabrication of dense arrays of microlenses is shown, and the thermal and structural interactions between the neighboring lenses were also studied. Two-dimensional continuous-profile topographic features are achieved by exposure of the moving substrates to the writing

  4. Nickel nano-particle modified nitrogen-doped amorphous hydrogenated diamond-like carbon film for glucose sensing

    SciTech Connect

    Zeng, Aiping; Jin, Chunyan; Cho, Sang-Jin; Seo, Hyun Ook; Kim, Young Dok; Lim, Dong Chan; Kim, Doo Hwan; Hong, Byungyou; Boo, Jin-Hyo

    2012-10-15

    Electrochemical method has been employed in this work to modify nitrogen-doped hydrogen amorphous diamond-like carbon (N-DLC) film to fabricate nickel nano-particle-modified N-DLC electrodes. The electrochemical behavior of the nickel nano-particle-modified N-DLC electrodes has been characterized at the presence of glucose in electrolyte. Meanwhile, the N-DLC film structure and the morphology of metal nano-particles on the N-DLC surface have been investigated using micro-Raman spectroscopy and atomic force microscopy. The nickel nano-particle-modified N-DLC electrode exhibits a high catalytic activity and low background current. This result shows that the nickel nano-particle deposition on N-DLC surface could be a promising method to fabricate novel electrode materials for glucose sensing.

  5. Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes

    NASA Astrophysics Data System (ADS)

    Tali, S. A. Safiabadi; Soleimani-Amiri, S.; Sanaee, Z.; Mohajerzadeh, S.

    2017-02-01

    We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C2H2 and N2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm2 (45 F/cm3) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 103 Wh/m3 (8.3 × 106 J/m3) and ultra-high power density of 2.6 × 108 W/m3 which is among the highest reported values.

  6. Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes

    PubMed Central

    Tali, S. A. Safiabadi; Soleimani-Amiri, S.; Sanaee, Z.; Mohajerzadeh, S.

    2017-01-01

    We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C2H2 and N2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm2 (45 F/cm3) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 103 Wh/m3 (8.3 × 106 J/m3) and ultra-high power density of 2.6 × 108 W/m3 which is among the highest reported values. PMID:28186204

  7. Electrostatic analysis of n-doped SrTiO{sub 3} metal-insulator-semiconductor systems

    SciTech Connect

    Kamerbeek, A. M. Banerjee, T.; Hueting, R. J. E.

    2015-12-14

    Electron doped SrTiO{sub 3}, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO{sub 3} systems show reasonably strong rectification even when SrTiO{sub 3} is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO{sub x} in between the metal and n-SrTiO{sub 3} interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO{sub 3}) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO{sub 3}. The non-linear permittivity of n-SrTiO{sub 3} leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

  8. Silicon-doping makes the B12N12 insulator to an n or p-semiconductor

    NASA Astrophysics Data System (ADS)

    Baei, Mohammad T.; Hashemian, Saeedeh; Yourdkhani, Sirous

    2013-08-01

    Density functional theory (DFT) calculations were performed to investigate the electronic and structural properties of pristine and Si-doped B12N12 fullerene in SiB and SiN models in order to evaluate the influence of Si doping on B12N12 fullerene. The optimized structures, structural parameters, dipole moments, binding energies, energy gaps, Fermi level energies (EFL), work function (Φ), and chemical shifts have been evaluated for the pristine and two Si-doped B12N12 fullerene structures. It was found that the values of energy gap and work function of the SiB and SiN models are decreased, so that the B12N12 insulator converts to an n or p-semiconductor in the SiB and SiN models. Also, a better value of binding energy was obtained for the SiB model in comparison with the SiN model. The evaluation of chemical shifts indicated that the doped Si atom significantly influence on the chemical shifts of the B12N12 fullerene, especially in the SiN model. The doped Si atom could employ an electric field on the B and N atoms of Si-doped B12N12 structures, so that their chemical shifts go to lower fields.

  9. Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2.

    PubMed

    Colombara, Diego; Berner, Ulrich; Ciccioli, Andrea; Malaquias, João C; Bertram, Tobias; Crossay, Alexandre; Schöneich, Michael; Meadows, Helene J; Regesch, David; Delsante, Simona; Gigli, Guido; Valle, Nathalie; Guillot, Jérome; El Adib, Brahime; Grysan, Patrick; Dale, Phillip J

    2017-02-24

    Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas-phase alkali transport in the kesterite sulfide (Cu2ZnSnS4) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source.

  10. Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2

    PubMed Central

    Colombara, Diego; Berner, Ulrich; Ciccioli, Andrea; Malaquias, João C.; Bertram, Tobias; Crossay, Alexandre; Schöneich, Michael; Meadows, Helene J.; Regesch, David; Delsante, Simona; Gigli, Guido; Valle, Nathalie; Guillot, Jérome; El Adib, Brahime; Grysan, Patrick; Dale, Phillip J.

    2017-01-01

    Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas-phase alkali transport in the kesterite sulfide (Cu2ZnSnS4) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source. PMID:28233864

  11. Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2

    NASA Astrophysics Data System (ADS)

    Colombara, Diego; Berner, Ulrich; Ciccioli, Andrea; Malaquias, João C.; Bertram, Tobias; Crossay, Alexandre; Schöneich, Michael; Meadows, Helene J.; Regesch, David; Delsante, Simona; Gigli, Guido; Valle, Nathalie; Guillot, Jérome; El Adib, Brahime; Grysan, Patrick; Dale, Phillip J.

    2017-02-01

    Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas-phase alkali transport in the kesterite sulfide (Cu2ZnSnS4) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source.

  12. Transport Properties Of PbI2 Doped Silver Oxysalt Based Amorphous Solid Electrolytes

    NASA Astrophysics Data System (ADS)

    Shrisanjaykumar Jayswal, Manishkumar

    Solid electrolytes are a class of materials that conduct electricity by means of motion of ions like Ag+, Na+, Li +, Cu+, H+, F-, O -2 etc. in solid phase. The host materials include crystalline, polycrystalline, glasses, polymers and composites. Ion conducting glasses are one of the most sought after solid electrolytes that are useful in various electrochemical applications like solid state batteries, gas sensors, supercapacitors, electrochromic devices, to name a few. Since the discovery of fast silver ion transport in silver oxyhalide glasses at the end of the 1960s, many glasses showing large ionic conductivity up to 10-4 10-2 S/cm at room temperature have been developed, chiefly silver and copper ion conductors. The silver ion conducting glasses owe their high ionic conductivity mainly to stabilized alpha-AgI. AgI, as we know, undergoes a structural phase transition from wurtzite (beta phase) at room temperature to body centered cubic (alpha phase) structure at temperatures higher than 146 °C. The alpha-AgI possesses approximately six order of higher ionic conductivity than beta-AgI. The high ionic conductivity of alpha-AgI is attributed to its molten sublattice type of structure, which facilitates easy Ag+ ion migration, like a liquid. And hence, several attempts have been made to stabilize it at room temperature in crystalline as well as non-crystalline hosts like oxide and non-oxide glasses. Recently, in order to stabilize AgI in glasses, instead of directly doping it, indirect routes have also been explored. Where, a metal iodide salt along with silver oxide or silver phosphate is taken and an exchange reaction permitted by Hard and Soft, Acid and Base (HSAB) principle occurs between the two and AgI and metal oxide form in the glass forming melt. Work done in the present thesis has been organized in seven chapters as follows: Chapter 1: A review and background information of different solid electrolyte materials and their development is presented. Along

  13. Boron-doped diamond semiconductor electrodes: Efficient photoelectrochemical CO2 reduction through surface modification

    NASA Astrophysics Data System (ADS)

    Roy, Nitish; Hirano, Yuiri; Kuriyama, Haruo; Sudhagar, Pitchaimuthu; Suzuki, Norihiro; Katsumata, Ken-Ichi; Nakata, Kazuya; Kondo, Takeshi; Yuasa, Makoto; Serizawa, Izumi; Takayama, Tomoaki; Kudo, Akihiko; Fujishima, Akira; Terashima, Chiaki

    2016-11-01

    Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligible amount of reduction products. Silver nanoparticles were then deposited on BDDL because of their selective electrochemical CO2 reduction ability. Excellent selectivity (estimated CO:H2 mass ratio of 318:1) and recyclability (stable for five cycles of 3 h each) for photoelectrochemical CO2 reduction were obtained for the optimum silver nanoparticle-modified BDDL electrode at ‑1.1 V vs. RHE under 222-nm irradiation. The high efficiency and stability of this catalyst are ascribed to the in situ photoactivation of the BDDL surface during the photoelectrochemical reaction. The present work reveals the potential of BDDL as a high-energy electron source for use with co-catalysts in photochemical conversion.

  14. Boron-doped diamond semiconductor electrodes: Efficient photoelectrochemical CO2 reduction through surface modification

    PubMed Central

    Roy, Nitish; Hirano, Yuiri; Kuriyama, Haruo; Sudhagar, Pitchaimuthu; Suzuki, Norihiro; Katsumata, Ken-ichi; Nakata, Kazuya; Kondo, Takeshi; Yuasa, Makoto; Serizawa, Izumi; Takayama, Tomoaki; Kudo, Akihiko; Fujishima, Akira; Terashima, Chiaki

    2016-01-01

    Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligible amount of reduction products. Silver nanoparticles were then deposited on BDDL because of their selective electrochemical CO2 reduction ability. Excellent selectivity (estimated CO:H2 mass ratio of 318:1) and recyclability (stable for five cycles of 3 h each) for photoelectrochemical CO2 reduction were obtained for the optimum silver nanoparticle-modified BDDL electrode at −1.1 V vs. RHE under 222-nm irradiation. The high efficiency and stability of this catalyst are ascribed to the in situ photoactivation of the BDDL surface during the photoelectrochemical reaction. The present work reveals the potential of BDDL as a high-energy electron source for use with co-catalysts in photochemical conversion. PMID:27892544

  15. Moving liquids with light: Photoelectrowetting on semiconductors

    PubMed Central

    Arscott, Steve

    2011-01-01

    By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014−8×1018 cm−3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics. PMID:22355699

  16. Molecular dynamics study of the mechanical loss in amorphous pure and doped silica.

    PubMed

    Hamdan, Rashid; Trinastic, Jonathan P; Cheng, H P

    2014-08-07

    Gravitational wave detectors and other precision measurement devices are limited by the thermal noise in the oxide coatings on the mirrors of such devices. We have investigated the mechanical loss in amorphous oxides by calculating the internal friction using classical, atomistic molecular dynamics simulations. We have implemented the trajectory bisection method and the non-local ridge method in the DL-POLY molecular dynamics simulation software to carry out those calculations. These methods have been used to locate the local potential energy minima that a system visits during a molecular dynamics trajectory and the transition state between any two consecutive minima. Using the numerically calculated barrier height distributions, barrier asymmetry distributions, relaxation times, and deformation potentials, we have calculated the internal friction of pure amorphous silica and silica mixed with other oxides. The results for silica compare well with experiment. Finally, we use the numerical calculations to comment on the validity of previously used theoretical assumptions.

  17. Molecular dynamics study of the mechanical loss in amorphous pure and doped silica

    NASA Astrophysics Data System (ADS)

    Hamdan, Rashid; Trinastic, Jonathan P.; Cheng, H. P.

    2014-08-01

    Gravitational wave detectors and other precision measurement devices are limited by the thermal noise in the oxide coatings on the mirrors of such devices. We have investigated the mechanical loss in amorphous oxides by calculating the internal friction using classical, atomistic molecular dynamics simulations. We have implemented the trajectory bisection method and the non-local ridge method in the DL-POLY molecular dynamics simulation software to carry out those calculations. These methods have been used to locate the local potential energy minima that a system visits during a molecular dynamics trajectory and the transition state between any two consecutive minima. Using the numerically calculated barrier height distributions, barrier asymmetry distributions, relaxation times, and deformation potentials, we have calculated the internal friction of pure amorphous silica and silica mixed with other oxides. The results for silica compare well with experiment. Finally, we use the numerical calculations to comment on the validity of previously used theoretical assumptions.

  18. Tailoring p- and n- type semiconductor through site selective oxygen doping in Cu3N: density functional studies

    NASA Astrophysics Data System (ADS)

    Sahoo, Guruprasad; Kashikar, Ravi; Jain, Mahaveer K.; Nanda, B. R. K.

    2016-06-01

    Using ab initio density functional calculations, we have investigated the stability and electronic structure of pure and oxygen doped semiconducting Cu3N. The oxygen can be accommodated in the system without structural instability as the formation energy either decreases when oxygen substitutes nitrogen, or remains nearly same when oxygen occupies the interstitial position. The interstitial oxygen (OI) prefers to stabilize in the unusual charge neutral state and acts as an acceptor to make the system a p-type degenerate semiconductor. In this case the hole pockets are formed by the partially occupied OI-p states. On the other hand, oxygen substituting nitrogen (OS) stabilizes in its usual -2 charge state and acts as a donor to make the system an n-type degenerate semiconductor. The electron pockets are formed by the conducting Cu-p states. In the case of mixed doping, holes are gradually compensated by the donor electrons and an intrinsic gap is obtained for {{{Cu}}}3{{{N}}}{1-2{x}}{{{{O}}}{{S}}}2{x}{{{{O}}}{{I}}}{x} stoichiometry. Our calculations predict the nature of doping as well as optical band gap ({{E}{{g}}}{{o}{{p}}{{t}}}) variation in experimentally synthesized copper oxynitride. While interstitial doping contracts the lattice and increases the {{E}{{g}}}{{o}{{p}}{{t}}}, substitutional doping increases both lattice size and {{E}{{g}}}{{o}{{p}}{{t}}}. Mixed doping reduces {{E}{{g}}}{{o}{{p}}{{t}}}. Additionally we show that a rare intra-atomic d-p optical absorption can be realized in the pristine Cu3N as the Fermi level lies in the gap between the Cu-d dominated anti-bonding valence state and Cu-p conducting state.

  19. Thermodynamic and kinetic studies of laser thermal processing of heavily boron-doped amorphous silicon using molecular dynamics

    NASA Astrophysics Data System (ADS)

    Wang, Liguo; Clancy, Paulette; Thompson, Michael O.; Murthy, Cheruvu S.

    2002-09-01

    Laser thermal processing (LTP) has been proposed as a means to avoid unwanted transient enhanced diffusion and deactivation of dopants, especially boron and arsenic, during the formation of ultrashallow junctions. Although experimental studies have been carried out to determine the efficacy of LTP for pure Si and lightly B-doped junctions, the effects of high concentrations of dopants (above 2% B) on the thermodynamic and kinetic properties of the regrown film are unknown. In this study, a classical interatomic potential model [Stillinger-Weber (SW)] is used with a nonequilibrium molecular dynamics computer simulation technique to study the laser thermal processing of heavily B-doped Si in the range 2-10 at. % B. We observe only a small effect of boron concentration on the congruent melting temperature of the B:Si alloy, and thus the narrowing of the "process window" for LTP is predicted to be small. No significant tendency for boron to segregate was observed at either the regrowth front or the buried c-Si interface during fast regrowth. The B-doped region regrew as defect-free crystal with full activation of the boron atoms at low boron concentrations (2%), in good agreement with experiments. As the concentration of boron increased, the number of intrinsic Si defects and boron interstitials in the regrown materials increased, with a minor amount of boron atoms in clusters (<2%). An instability limit for crystal regrowth was observed at around 8%-10% boron atoms during fast regrowth; systems with 10% B showed partial amorphization during regrowth. Comparison with tight-binding quantum mechanical calculations showed that the SW model gives similar diffusivities in the liquid and tendency to cluster, but the lifetimes of the SW clusters are considerably too long (>150 ps, compared to 5 ps in tight binding). The importance of adequate system size is discussed.

  20. Transition from half metal to semiconductor in Li doped g-C{sub 4}N{sub 3}

    SciTech Connect

    Hashmi, Arqum; Hu, Tao; Hong, Jisang

    2014-03-28

    We have investigated the structural and magnetic properties of Li doped graphitic carbon nitride (g-C{sub 4}N{sub 3}) using the van der Waals density functional theory. A free standing g-C{sub 4}N{sub 3} was known to show a half metallic state with buckling geometry, but this feature completely disappears in the presence of Li doping. Besides this structural modification, very interestingly, we have obtained that the Li doped g-C{sub 4}N{sub 3} shows dramatic change in its electronic structure. Both ferromagnetic and nonmagnetic states are almost degenerated in one Li atom doped system. However, the transition from half metallic state to semiconductor is observed with further increase of Li concentration and the calculated energy gap is 1.97 eV. We found that Li impurity plays as a donor element and charge transfer from the Li atom to neighboring N atoms induces a band gap. Overall, we have observed that the electronic and magnetic properties of g-C{sub 4}N{sub 3} are substantially modified by Li doping.

  1. Synthesis of doped semiconductor nanostructures using microemulsions and liquid crystals as templates

    NASA Astrophysics Data System (ADS)

    Panzarella, Tracy Heckler

    Semiconductor nanocrystals, also known as quantum dots (QDs), are a relatively new class of materials with unique size-dependent optical properties that enable the use of these materials in a variety of applications, including fluorescent labels for biomolecules, illumination and display technologies and photovoltaics. When the size of the QD is smaller than the mean separation of an optically excited electron-hole pair, or exciton, size-dependent fluorescence is observed as their emission peak shifts to larger wavelengths with increasing size. Doping of QDs with transition metals enables the tuning of their optoelectronic properties, leading to emission wavelengths longer than their bulk emission. The doping of QDs has recently garnered significant attention because it allows for the ability to tune the QD emission without changing its size. Currently, the most common method for synthesizing QDs involves the injection of organometallic precursors into hot coordinating solvents. To obtain monodisperse nanocrystals with this technique, instantaneous injection of the reactants, uniform nucleation over the entire reactor volume and perfect mixing are required. These conditions are difficult to achieve in practice, and even more difficult in a scaled-up reactor system necessary for commercial applications. The use of microemulsions as templates can enable the synthesis of semiconductor nanocrystals of uniform size and shape, and allow for scalability. The template used in this work consists of para-xylene as the continuous phase, water as the dispersed phase, and a poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO37-PPO56-PEO37) block copolymer as the surfactant, with the reactants dissolved in the aqueous dispersed phase. Microemulsions formed by this technique, exhibit very slow droplet to droplet coalescence kinetics and allow for the growth of particles with narrow size distribution. A microemulsion template was used to synthesize Mn-doped Zn

  2. Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Kaczorowski, D.; Stadnyk, Yu. V.; Korzh, R. O.; Krayovskyy, V. Ya.; Kovbasyuk, T. M.

    2015-03-15

    The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N{sub A}{sup Lu} ≈ 1.9 × 10{sup 20}−1.9 × 10{sup 21} cm{sup −3} (x = 0.01–0.10) at H ≤ 10 kG is studied. The nature of the structural-defect generation mechanism leading to changes in the band gap and the degree of semiconductor compensation is determined. Its essence is the simultaneous reduction and elimination of donor-type structural defects due to the displacement of ∼1% of Ni atoms from the Hf (4a) site, the generation of acceptor-type structural defects by substituting Ni atoms with Lu atoms at the 4c site, and the generation of donor-type defects such as vacancies at the Sn (4b) site. The results of calculations of the electronic structure of Hf{sub 1−x}Lu{sub x}NiSn are in agreement with experimental data. The results are discussed within the model of a heavily doped and compensated Shklovskii-Efros semiconductor.

  3. Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru

    SciTech Connect

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Stadnyk, Yu. V.; Korzh, R. O.; Krayovskyy, V. Ya.; Horyn, A. M.

    2014-12-15

    The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 80–400 K and N{sub A}{sup Ru} ≈ 9.5 × 10{sup 19}−5.7 × 10{sup 20} cm{sup −3} (x = 0–0.03), respectively. The mechanism of structural-defect generation is established, which changes the band gap and degree of compensation of the semiconductor and consists in the simultaneous concentration reduction and elimination of donor structural defects by means of the displacement of ∼1% of Ni atoms from the Hf (4a) positions, the generation of acceptor structural defects upon the substitution of Ru atoms for Ni atoms in the 4c positions, and the generation of donor defects in the form of vacancies in the Sn (4b) positions. The calculated electronic structure of HfNi{sub 1−x}Ru{sub x}Sn is consistent with the experiment. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.

  4. Properties and transport behavior of perfluorotripentylamine (FC-70)-doped amorphous teflon AF 2400 films.

    PubMed

    Zhang, Hong; Hussam, Abul; Weber, Stephen G

    2010-12-22

    Teflon AF 2400 films are known to imbibe solvents, making films in the presence of solvents less fluorous than they might otherwise be. Herein, we demonstrate that doping films with perfluorotripentylamine (Fluorinert FC-70) maintains the fluorous nature of Teflon AF 2400 and improves transport selectivity for fluorine-containing organic compounds. Density measurements on the FC-70-doped films reveal that free volume decreases dramatically as the dopant concentration increases (0-12 wt %) and then increases to approach that of pure FC-70. Remarkably, films from 0 to 12 wt % FC-70 have the same w/v concentration of Teflon AF 2400, indicating that FC-70 fills the free volume of Teflon AF 2400. This is consistent with the observed increased storage modulus and significant decrease (compared to undoped films) of solute diffusion coefficients in the same range of FC-70 concentrations. In contrast, FC-70 at concentrations greater than 12 wt % dilutes Teflon AF 2400, leading to a decrease of storage modulus and dramatic increase in solute diffusion coefficients. Sorption of chloroform decreases from 11.8 g of chloroform/100 g of film (pure Teflon film) to 3.8 g of chloroform/100 g of film (27 wt % FC-70-doped Teflon film), less than the solubility of chloroform in pure FC-70 (4.06 g of chloroform/100 g of FC-70). Solute partition coefficients from chloroform to FC-70-doped films generally decrease with increased dopant concentration. However, within a series of toluenes and nitrobenzenes, selectivity for F-containing solutes over analogous H-containing solutes increases as dopant concentration increases if the substitution is on the aromatic ring but not if it is on the methyl group (toluene). Transport (partitioning × diffusion) rates, as they involve both thermodynamic and kinetic factors, are not simply related to composition.

  5. Codeposition of amorphous zinc tin oxide using high power impulse magnetron sputtering: characterisation and doping

    NASA Astrophysics Data System (ADS)

    Tran, H. N.; Mayes, E. L. H.; Murdoch, B. J.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.; Holland, A. S.; Partridge, J. G.

    2017-04-01

    Thin film zinc tin oxide (ZTO) has been energetically deposited at 100 °C using high power impulse magnetron sputtering (HiPIMS). Reactive co-deposition from Zn (HiPIMS mode) and Sn (DC magnetron sputtering mode) targets yielded a gradient in the Zn:Sn ratio across a 4-inch diameter sapphire substrate. The electrical and optical properties of the film were studied as a function of composition. As-deposited, the films were amorphous, transparent and semi-insulating. Hydrogen was introduced by post-deposition annealing (1 h, 500 °C, 100 mTorr H2) and resulted in significantly increased conductivity with no measurable structural alterations. After annealing, Hall effect measurements revealed n-type carrier concentrations of ∼1 × 1017 cm‑3 and mobilities of up to 13 cm2 V‑1 s–1. These characteristics are suitable for device applications and proved stable. X-ray photoelectron spectroscopy was used to explore the valence band structure and to show that downward surface band-bending resulted from OH attachment. The results suggest that HiPIMS can produce dense, high quality amorphous ZTO suitable for applications including transparent thin film transistors.

  6. A sensitive and label-free photoelectrochemical aptasensor using Co-doped ZnO diluted magnetic semiconductor nanoparticles.

    PubMed

    Li, Hongbo; Qiao, Yunfei; Li, Jing; Fang, Hailin; Fan, Dahe; Wang, Wei

    2016-03-15

    Co-doped ZnO diluted magnetic semiconductor as a novel photoelectric beacon was first constructed for photoelectrochemical (PEC) aptasensor of acetamiprid. The fabricated PEC sensing is based on the specific binding of acetamiprid and its aptamer, which induces the decreasement of enhanced photocurrent produced by the electron donor of quercetin. Co(2+) doping has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers due to the sp-d exchange interactions existing between the band electrons and the localized d electrons of Co(2+). The fabricated aptasensor was linear with the concentration of acetamiprid in the range of 0.5-800 nmolL(-1) with the detection limit of 0.18 nmolL(-1). The presence of same concentration of other conventional pesticides did not interfere in the detection of acetamiprid and the recovery is between 96.2% and 103.7%. This novel PEC aptasensor has good performances with high sensitivity, good selectivity, low cost and portable features. The strategy of Co-doped ZnO diluted magnetic semiconductor paves a new way to improve the performances of PEC aptasensor.

  7. New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping

    NASA Astrophysics Data System (ADS)

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Liu, Qingqing; Gu, C. Z.; Hu, F. X.; Shen, B. G.; Frandsen, Benjamin; Cheung, Sky; Lian, Liu; Uemura, Yasutomo J.; Ding, Cui; Guo, Shengli; Ning, Fanlong; Munsie, Timothy J. S.; Wilson, Murray Neff; Cai, Yipeng; Luke, Graeme; Guguchia, Zurab; Yonezawa, Shingo; Li, Zhi; Jin, Changqing

    2016-11-01

    We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the “1111” iron-based superconductors. The joint hole doping via (Ba,K) substitution & spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments.

  8. New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping

    PubMed Central

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Liu, Qingqing; Gu, C. Z.; Hu, F. X.; Shen, B. G.; Frandsen, Benjamin; Cheung, Sky; Lian, Liu; Uemura, Yasutomo J.; Ding, Cui; Guo, Shengli; Ning, Fanlong; Munsie, Timothy J. S.; Wilson, Murray Neff; Cai, Yipeng; Luke, Graeme; Guguchia, Zurab; Yonezawa, Shingo; Li, Zhi; Jin, Changqing

    2016-01-01

    We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the “1111” iron-based superconductors. The joint hole doping via (Ba,K) substitution & spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments. PMID:27874044

  9. New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping.

    PubMed

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Liu, Qingqing; Gu, C Z; Hu, F X; Shen, B G; Frandsen, Benjamin; Cheung, Sky; Lian, Liu; Uemura, Yasutomo J; Ding, Cui; Guo, Shengli; Ning, Fanlong; Munsie, Timothy J S; Wilson, Murray Neff; Cai, Yipeng; Luke, Graeme; Guguchia, Zurab; Yonezawa, Shingo; Li, Zhi; Jin, Changqing

    2016-11-22

    We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the "1111" iron-based superconductors. The joint hole doping via (Ba,K) substitution &spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments.

  10. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    DOE PAGES

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; ...

    2016-02-12

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013more » e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. As a result, the ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.« less

  11. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    PubMed Central

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-01-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013 e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors. PMID:26867673

  12. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    NASA Astrophysics Data System (ADS)

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013 e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.

  13. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions.

    PubMed

    Dissanayake, D M N M; Ashraf, A; Dwyer, D; Kisslinger, K; Zhang, L; Pang, Y; Efstathiadis, H; Eisaman, M D

    2016-02-12

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 10(12) e/cm(2) or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene's properties. Here we demonstrate strong (1.33 × 10(13) e/cm(2)), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 10(13) e/cm(2) when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.

  14. Relationship between the evolutions of the microstructure and semiconductor properties of yttrium-doped barium titanate ceramics

    NASA Astrophysics Data System (ADS)

    Huang, C. M.; Lin, C. Y.; Shieh, J.

    2011-08-01

    Intricate connections among the microstructural effect, semiconducting tendency and charge compensation behaviour of yttrium (Y3+) dopants in near-stoichiometric barium titanate (BaTiO3; Ba/Ti atomic ratio = 0.999) ceramics sintered at 1460 °C in air are examined. It is found that with increasing Y3+ doping up to 2.0 mol%, the microstructure of BaTiO3 evolves from a liquid-phase-assisted dense-sintered microstructure to a highly porous microstructure characterized by connected pores and loose lattices of fused submicrometre grains. During such evolution, a transitional microstructure characterized by large distinctive pores and grains with abnormal morphology is also identified. When Y3+ doping is increased progressively from 0.02 to 0.2 mol%, the (negative) majority carrier concentration and conductivity are increased substantially by 8 orders of magnitude. This increase in n-type semiconductor characteristics is contributed not only by the increasing substitution of Y3+ for Ba2+ in host BaTiO3, but also by the formation of yttrium-rich and/or oxygen-deficient precipitates at the grain boundaries. The grain boundary phases would therefore stabilize the mechanism of free electron compensation and enable the transportation of electrons through the grain boundaries. The measured Hall effect data indicate the shift from the n-type to p-type semiconductor properties with increasing Y3+ doping. The carrier mobilities of 1.0 and 2.0 mol% Y-doped BaTiO3 are high; this is attributed to their highly porous microstructures which provide easy diffusion paths for the charge carriers. Through a combined interpretation of the diffractometry, microscopy, mass spectrometry and Hall effect data, Y3+ doping at 1.0 mol% is found to be the critical doping amount separating different site-occupying behaviours of Y3+ in the BaTiO3 cation sites, which eventually lead to different charge compensation mechanisms and semiconductor properties.

  15. Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

    NASA Astrophysics Data System (ADS)

    Wu, Shao-Hang; Zhang, Nan; Hu, Yong-Sheng; Chen, Hong; Jiang, Da-Peng; Liu, Xing-Yuan

    2015-10-01

    Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel. Project supported by the National Natural Science Foundation of China (Grant No. 6140031454) and the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications.

  16. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    NASA Astrophysics Data System (ADS)

    Lee, Hyoung-Rae; Park, Jea-Gun

    2014-10-01

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO X distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O2. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  17. Improved Radio Frequency Power Characteristics of Complementary Metal-Oxide-Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor

    NASA Astrophysics Data System (ADS)

    Tsu Chang,; Hsuan-ling Kao,; Y. J. Chen,; Albert Chin,

    2010-03-01

    We have characterized and modeled the radio frequency (RF) power performance of a 0.18 μm asymmetric-lightly-doped-drain metal-oxide-semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 μm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.

  18. Switchable single-longitudinal-mode dual-wavelength erbium-doped fiber ring laser incorporating a semiconductor optical amplifier.

    PubMed

    Pan, Shilong; Zhao, Xiaofan; Lou, Caiyun

    2008-04-15

    We propose and demonstrate a novel single-longitudinal-mode (SLM) dual-wavelength erbium-doped fiber ring laser incorporating a semiconductor optical amplifier. The SOA biased in its low-gain regime greatly reduces the gain competition of the two wavelengths. The stable SLM operation is guaranteed by a passive triple-ring cavity and a fiber Fabry-Perot filter. The dual-wavelength output with a 40 GHz wavelength spacing is switchable in the range of 1533-1565.4 nm.

  19. Microstructural and Optical properties of transition metal (Cu) doped ZnO diluted magnetic semiconductor nano thin films fabricated by sol gel method

    NASA Astrophysics Data System (ADS)

    Ozturk, Ozgur; Asikuzun, Elif; Tasci, A. Tolga; Arda, Lutfi; Demirozu Senol, Sevim; Celik, Sukru; Terzioglu, Cabir

    Undoped and Cu (Copper) doped ZnO (Zn1-xCuxO) semiconductor thin films were produced by using sol-gel method. Cu was doped 1%, 2%, 3%, 4% and 5% ratio. Methanol and monoethanolamine (MEA) were used as solvent and stabilizer. In this study, the effect of Cu doping was investigated on microstructural and optical properties of ZnO DMS thin films. XRD, SEM, AFM and UV-VIS spectrometer measurements were performed for the microstructural and optical characterization. XRD, SEM and AFM results were showed that all of Cu doped ZnO based thin films have a hexagonal structure. The grain size of Cu doped ZnO thin films and morphology of surface were changed with increasing Cu doping. The optical transmittance of transition metal (Cu) doped ZnO thin films were decreased with doping. Keywords:Diluted Magnetic Semiconductor (DMS), Thin Film, Cu-doping, Bandgap Energy, ZnO. This research has been supported by the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KU-BAP-05/2015-12 and the Scientific and Technological Research Council of Turkey (TUBITAK) Project No. 114F259.

  20. A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser

    NASA Astrophysics Data System (ADS)

    Sakaike, Kohei; Kobayashi, Yoshitaka; Nakamura, Shogo; Akazawa, Muneki; Higashi, Seiichiro

    2014-04-01

    A technique for local layer transfer and simultaneous crystallization of amorphous silicon (a-Si) films with midair cavity induced by near-infrared semiconductor diode laser (SDL) irradiation is demonstrated. After SDL irradiation, the silicon (Si) films were completely transferred and crystallized simultaneously on counter substrates. Electron backscatter diffraction pattern maps confirmed that the maximum grain size of the transferred Si films is 20 µm. High-performance polycrystalline Si thin-film transistors (TFTs) were successfully fabricated on the locally transferred Si films. These TFTs showed a high on/off ratio of more than 106 and a field-effect mobility as high as 492 cm2 V-1 s-1.

  1. Effect of oxygen vacancy on half metallicity in Ni-doped CeO{sub 2} diluted magnetic semiconductor

    SciTech Connect

    Saini, Hardev S. Saini, G. S. S.; Singh, Mukhtiyar; Kashyap, Manish K.

    2015-05-15

    The electronic and magnetic properties of Ni-doped CeO{sub 2} diluted amgentic semiconductor (DMS) including the effect of oxygen vacancy (V{sub o}) with doping concentration, x = 0.125 have been calculated using FPLAPW method based on Density Functional Theory (DFT) as implemented in WIEN2k. In the present supercell approach, the XC potential was constructed using GGA+U formalism in which Coulomb correction is applied to standard GGA functional within the parameterization of Perdew-Burke-Ernzerhof (PBE). We have found that the ground state properties of bulk CeO{sub 2} compound have been modified significantly due to the substitution of Ni-dopant at the cation (Ce) site with/without V{sub O} and realized that the ferromagnetism in CeO{sub 2} remarkably depends on the V{sub o} concentrations. The presence of V{sub o}, in Ni-doped CeO{sub 2}, can leads to strong ferromagnetic coupling between the nearest neighboring Ni-ions and induces a HMF in this compound. Such ferromagnetic exchange coupling is mainly attributed to spin splitting of Ni-d states, via electrons trapped in V{sub o}. The HMF characteristics of Ni-doped CeO{sub 2} including V{sub o} makes it an ideal material for spintronic devices.

  2. Widely bandgap tunable amorphous Cd–Ga–O oxide semiconductors exhibiting electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}

    SciTech Connect

    Yanagi, Hiroshi; Sato, Chiyuki; Kimura, Yota; Suzuki, Issei; Omata, Takahisa; Kamiya, Toshio; Hosono, Hideo

    2015-02-23

    Amorphous oxide semiconductors exhibit large electron mobilities; however, their bandgaps are either too large for solar cells or too small for deep ultraviolet applications depending on the materials system. Herein, we demonstrate that amorphous Cd–Ga–O semiconductors display bandgaps covering the entire 2.5–4.3 eV region while maintaining large electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}. The band alignment diagram obtained by ultraviolet photoemission spectroscopy and the bandgap values reveal that these semiconductors form type-II heterojunctions with p-type Cu{sub 2}O, which is suitable for solar cells and solar-blind ultraviolet sensors.

  3. Cyclotron Splittings in the Plasmon Resonances of Electronically Doped Semiconductor Nanocrystals Probed by Magnetic Circular Dichroism Spectroscopy.

    PubMed

    Hartstein, Kimberly H; Schimpf, Alina M; Salvador, Michael; Gamelin, Daniel R

    2017-04-10

    A fundamental understanding of the rich electronic structures of electronically doped semiconductor nanocrystals is vital for assessing the utility of these materials for future applications from solar cells to redox catalysis. Here, we examine the use of magnetic circular dichroism (MCD) spectroscopy to probe the infrared localized surface plasmon resonances of p-Cu2-xSe, n-ZnO, and tin-doped In2O3 (n-ITO) nanocrystals. We demonstrate that the MCD spectra of these nanocrystals can be analyzed by invoking classical cyclotron motions of their excess charge carriers, with experimental MCD signs conveying the carrier types (n or p) and experimental MCD intensities conveying the cyclotron splitting magnitudes. The experimental cyclotron splittings can then be used to quantify carrier effective masses (m*), with results that agree with bulk in most cases. MCD spectroscopy thus offers a unique measure of m* in free-standing colloidal semiconductor nanocrystals, raising new opportunities to investigate the influence of various other synthetic or environmental parameters on this fundamentally important electronic property.

  4. Doped Semiconductor-Nanocrystal Emitters with Optimal Photoluminescence Decay Dynamics in Microsecond to Millisecond Range: Synthesis and Applications

    PubMed Central

    2015-01-01

    Transition metal doped semiconductor nanocrystals (d-dots) possess fundamentally different emission properties upon photo- or electroexcitation, which render them as unique emitters for special applications. However, in comparison with intrinsic semiconductor nanocrystals, the potential of d-dots has been barely realized, because many of their unique emission properties mostly rely on precise control of their photoluminescence (PL) decay dynamics. Results in this work revealed that it would be possible to obtain bright d-dots with nearly single-exponential PL decay dynamics. By tuning the number of Mn2+ ions per dot from ∼500 to 20 in Mn2+ doped ZnSe nanocrystals (Mn:ZnSe d-dots), the single-exponential PL decay lifetime was continuously tuned from ∼50 to 1000 μs. A synthetic scheme was further developed for uniform and epitaxial growth of thick ZnS shell, ∼7 monolayers. The resulting Mn:ZnSe/ZnS core/shell d-dots were found to be essential for necessary environmental durability of the PL properties, both steady-state and transient ones, for the d-dot emitters. These characteristics combined with intense absorption and high PL quantum yields (70 ± 5%) enabled greatly simplified schemes for various applications of PL lifetime multiplexing using Mn:ZnSe/ZnS core/shell d-dots. PMID:27163024

  5. Towards p × n transverse thermoelectrics: extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation

    NASA Astrophysics Data System (ADS)

    Tang, Yang; Koblmüller, G.; Riedl, H.; Grayson, M.

    2016-03-01

    Transverse thermoelectrics promise entirely new strategies for integrated cooling elements for optoelectronics. The recently introduced p × n-type transverse thermoelectric paradigm indicates that the most important step to engineering artificial transverse thermoelectrics is to create alternate p- and n-doped layers with orthogonally oriented anisotropic conductivity. This paper studies an approach to creating extreme anisotropic conductivity in bulk-doped semiconductor thin films via ion implantation. This approach defines an array of parallel conduction channels with photolithographic patterning of an SiO2 mask layer, followed by proton implantation. With a 10 μm channel width and 20 μm pitch, both n-type and p-type Al0.42 Ga0.58As thin films demonstrate a conductivity anisotropy ratio σ /σ⊥ > 104 at room temperature, while the longitudinal resistivity along the channel direction after implantation only increased by a factor of 3.3 ˜ 3.6. This approach can be readily adapted to other semiconductor materials for artificial p × n-type transverse thermoelectrics as other applications.

  6. Electrical conduction of ion tracks in tetrahedral amorphous carbon: temperature, field and doping dependence and comparison with matrix data

    NASA Astrophysics Data System (ADS)

    Krauser, J.; Gehrke, H.-G.; Hofsäss, H.; Amani, J.; Trautmann, C.; Weidinger, A.

    2015-12-01

    This paper gives an extended overview of the electrical properties of ion tracks in hydrogen-free tetrahedral amorphous carbon (ta-C) with a sp3 bond fraction of about 80%. The films were grown by mass selected ion beam deposition of 100 eV 12C+ ions. The ion tracks are generated by irradiation of ta-C films with uranium ions of 1 GeV kinetic energy. Along the ion path a conversion from diamond-like (sp3) carbon to graphite-like (sp2) carbon takes place. Topography and current measurements of individual ion tracks were performed by atomic force microscopy at ambient temperature. The temperature dependence of the electric conductivity was studied between 15 and 390 K by means of 0.28 mm2 large contact pads averaging over about 107 tracks. For each sample and at each temperature the conductivity as a function of the applied electrical field (non-ohmic behaviour) was measured separately and the data were extrapolated to field zero. In this way, the zero-field conductivity was determined independent from the field dependence. In spite of large differences in the absolute values, the temperature dependence of the zero-field conductivities is found to be very similar in shape for all samples. The conductivities follow a {T}-{1/4} law up to temperatures slightly below room temperature. At higher temperatures a transport mechanism based on over-barrier hopping dominates with an activation energy of about 220 meV for tracks and 260 meV for the ta-C matrix. The field dependence measurements show that the deviation of the I-V characteristics from ohmic behaviour decreases with increasing zero-field conductivity. We also tested Cu-doped ta-C samples and found that they conduct significantly better than pure ta-C. However, the doping also increases the zero-field conductivity resulting in a weaker contrast between the track and matrix. The data are interpreted within the so-called ‘barrier model’ where the electrons are assumed to move fairly freely in well-conducting sp2

  7. Fabrication of Smart Chemical Sensors Based on Transition-Doped-Semiconductor Nanostructure Materials with µ-Chips

    PubMed Central

    Rahman, Mohammed M.; Khan, Sher Bahadar; Asiri, Abdullah M.

    2014-01-01

    Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm2) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r2 = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm−2mM−1 and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I–V sensors on μ-chips. PMID:24454785

  8. Effects of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane doping on diketopyrrolopyrrole-based, low crystalline, high mobility polymeric semiconductor

    SciTech Connect

    Yoon, Seongwon; Cho, Jangwhan; Chung, Dae Sung; Lee, Han-Koo; Park, Sungmin; Son, Hae Jung

    2015-09-28

    The effects of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) doping on diketopyrrolo-pyrrole-based polymeric semiconductors in terms of charge transport behavior and structural ordering are systematically investigated. Although the energy level offset between the polymeric semiconductor and the F4TCNQ acceptor was not particularly large, ultraviolet photoelectron spectroscopy analyses revealed that a low doping ratio of 1 wt. % is sufficient to tune the energy distance between the Fermi level and the HOMO level, reaching saturation at roughly 5 wt. %, which is further confirmed by the depletion mode measurements of field effect transistors (FETs). Structural analyses using grazing-incidence X-ray diffraction (GIXD) show that the overall degree of edge-on orientation is disturbed by the addition of dopants, with significant influence appearing at high doping ratios (>3 wt. %). The calculated charge carrier mobility from accumulation mode measurements of FETs showed a maximum value of 2 cm{sup 2}/V·s at the optimized doping ratio of 1%, enabled by additional holes in the channel region, which results in a roughly 40% increase relative to the undoped device. Further increases in the doping ratio, however, resulted in worse FET performance, which can be attributed to structural deformation. This result suggests that the electrochemical doping method can be also applied to donor-acceptor copolymers to further enhance their charge transport characteristics, once the optimized doping condition has been established.

  9. Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian Thomas

    1990-01-01

    A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

  10. Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells

    PubMed Central

    Jenatsch, Sandra; Geiger, Thomas; Heier, Jakob; Kirsch, Christoph; Nüesch, Frank; Paracchino, Adriana; Rentsch, Daniel; Ruhstaller, Beat; C Véron, Anna; Hany, Roland

    2015-01-01

    Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C60 bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability. PMID:27877804

  11. Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells.

    PubMed

    Jenatsch, Sandra; Geiger, Thomas; Heier, Jakob; Kirsch, Christoph; Nüesch, Frank; Paracchino, Adriana; Rentsch, Daniel; Ruhstaller, Beat; C Véron, Anna; Hany, Roland

    2015-06-01

    Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C60 bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability.

  12. Nitrogen plasma treatment of fluorine-doped tin oxide for enhancement of photo-carrier collection in amorphous Si solar cells

    NASA Astrophysics Data System (ADS)

    Baik, Seung Jae; Lim, Koeng Su

    2011-04-01

    Nitrogen plasma treatment was performed on fluorine-doped tin oxide (SnO2:F) front electrodes, and its impact on the performance of pin type amorphous Si (a-Si) solar cells was investigated. Nitrogen plasma treatment reverses the surface band bending of SnO2:F from accumulation to depletion, thus in turn reversing the band bending of the p type amorphous silicon carbide (p-a-SiC) window layer. The reversal of band bending leads to the collection of carriers generated in p-a-SiC, and quantum efficiency in the short wavelength regime is thereby enhanced. On the other hand, surface depletion of SnO2:F causes a reduction of the diode built-in voltage and increased series resistance, which could degrade the open circuit voltage (Voc) and fill factor (FF), the degradation of which is strongly affected by the deposition time of p-a-SiC.

  13. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    SciTech Connect

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-12

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013 e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. As a result, the ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.

  14. Universal increase in the superconducting critical temperature of two-dimensional semiconductors at low doping by the electron-electron interaction.

    PubMed

    Calandra, Matteo; Zoccante, Paolo; Mauri, Francesco

    2015-02-20

    In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon coupling, the electron-electron interaction results in an enhancement of the superconducting critical temperature. By performing first-principles calculations beyond density functional theory, we prove that this effect accounts for the unconventional doping dependence of the superconducting transition temperature (T(c)) and of the magnetic susceptibility measured in Li(x)ZrNCI. Finally, we discuss what are the conditions for a maximal T(c) enhancement in weakly doped two-dimensional semiconductors.

  15. N-doped P25 TiO2-amorphous Al2O3 composites: one-step solution combustion preparation and enhanced visible-light photocatalytic activity.

    PubMed

    Li, Fa-tang; Zhao, Ye; Hao, Ying-juan; Wang, Xiao-jing; Liu, Rui-hong; Zhao, Di-shun; Chen, Dai-mei

    2012-11-15

    Nitrogen-doped Degussa P25 TiO2-amorphous Al2O3 composites were prepared via facile solution combustion. The composites were characterised using X-ray diffraction, high-resolution transmission microscopy, scanning electron microscopy, nitrogen adsorption-desorption measurements, X-ray photoelectron spectroscopy, UV-vis light-diffusion reflectance spectrometry (DRS), zeta-potential measurements, and photoluminescence spectroscopy. The DRS results showed that TiO2 and amorphous Al2O3 exhibited absorption in the UV region. However, the Al2O3/TiO2 composite exhibited visible-light absorption, which was attributed to N-doping during high-temperature combustion and to alterations in the electronic structure of Ti species induced by the addition of Al. The optimal molar ratio of TiO2 to Al2O3 was 1.5:1, and this composite exhibited a large specific surface area of 152 m2/g, surface positive charges, and enhanced photocatalytic activity. These characteristics enhanced the degradation rate of anionic methylene orange, which was 43.6 times greater than that of pure P25 TiO2. The high visible-light photocatalytic activity was attributed to synthetic effects between amorphous Al2O3 and TiO2, low recombination efficiency of photo-excited electrons and holes, N-doping, and a large specific surface area. Experiments that involved radical scavengers indicated that OH and O2- were the main reactive species. A potential photocatalytic mechanism was also proposed.

  16. Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

    NASA Astrophysics Data System (ADS)

    Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

    2016-05-01

    We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

  17. Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors

    SciTech Connect

    Heinrich, Martin; Kluska, Sven; Binder, Sebastian; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

    2014-10-07

    It is investigated how potential drop sheet resistance measurements of areas formed by laser-assisted doping in crystalline Si wafers are affected by typically occurring experimental factors like sample size, inhomogeneities, surface roughness, or coatings. Measurements are obtained with a collinear four point probe setup and a modified transfer length measurement setup to measure sheet resistances of laser-doped lines. Inhomogeneities in doping depth are observed from scanning electron microscope images and electron beam induced current measurements. It is observed that influences from sample size, inhomogeneities, surface roughness, and coatings can be neglected if certain preconditions are met. Guidelines are given on how to obtain accurate potential drop sheet resistance measurements on laser-doped regions.

  18. Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

    NASA Astrophysics Data System (ADS)

    Yabuta, H.; Kaji, N.; Shimada, M.; Aiba, T.; Takada, K.; Omura, H.; Mukaide, T.; Hirosawa, I.; Koganezawa, T.; Kumomi, H.

    2014-06-01

    We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

  19. DNA translocation through a nanopore in a single-layered doped semiconductor membrane.

    PubMed

    Jou, Ining A; Melnikov, Dmitriy V; McKinney, Christopher R; Gracheva, Maria E

    2012-12-01

    Recently, we developed a computational model that allowed us to study the influence a semiconductor membrane has on a DNA molecule translocating through a nanopore in this membrane. Our model incorporated both the self-consistent Poisson-Nernst-Planck simulations for the electric potential of a solid state membrane immersed in an electrolyte solution together with the Brownian dynamics of the biomolecule. In this paper, we study how the applied electrolyte bias, the semiconductor membrane bias, and the semiconductor material type (n-Si or p-Si) affect the translocation dynamics of a single-stranded DNA moving through a nanopore in a single-layered semiconductor membrane. We show that the type of semiconductor material used for the membrane has a prominent effect on the biomolecule's translocation time, with DNA exhibiting much longer translocation times through the p-type membrane than through the n type at the same electrolyte and membrane potentials, while the extension of the biomolecule remains practically unchanged. In addition, we find the optimal combination for the membrane-electrolyte system's parameters to achieve the longest translocation time and largest DNA extension. With our single-layered electrically tunable membranes, the DNA translocation time can be manipulated to have an order of magnitude increase.

  20. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  1. Silver and potassium ion-exchanged waveguides in glasses doped with PbS semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Auxier, Jason M.; Honkanen, Seppo; Schülzgen, Axel; Morrell, Michael M.; Leigh, Matthew A.; Sen, Sabyasachi; Borrelli, Nicholas F.; Peyghambarian, Nasser

    2006-06-01

    We present a detailed analysis of potassium-sodium and silver-sodium ion-exchange processes for fabricating waveguides in glass doped with PbS semiconductor quantum dots. We compare the propagation losses of these waveguides, and we discuss the sources of these losses. In addition, we demonstrate a fourfold reduction in the propagation loss previously reported for potassium-sodium ion-exchanged waveguides and show that waveguides can be produced at additional quantum-dot resonances using both methods. We show that the near-infrared optical properties of these quantum dots remain intact by comparing the waveguide and bulk (unguided) luminescence spectra. Measurements of the near-field mode profiles show a high level of field confinement, which make these waveguides ideal for nonlinear optical (high-intensity) applications.

  2. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    PubMed Central

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  3. Chemical bonding structural analysis of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

    NASA Astrophysics Data System (ADS)

    Gima, Hiroki; Zkria, Abdelrahman; Katamune, Yūki; Ohtani, Ryota; Koizumi, Satoshi; Yoshitake, Tsuyoshi

    2017-01-01

    Nitrogen-doped ultra-nanocrystalline diamond/hydrogenated amorphous carbon composite films prepared in hydrogen and nitrogen mixed-gas atmospheres by coaxial arc plasma deposition with graphite targets were studied electrically and chemical-bonding-structurally. The electrical conductivity was increased by nitrogen doping, accompanied by the production of n-type conduction. From X-ray photoemission, near-edge X-ray absorption fine-structure, hydrogen forward-scattering, and Fourier transform infrared spectral results, it is expected that hydrogen atoms that terminate diamond grain boundaries will be partially replaced by nitrogen atoms and, consequently, π C-N and C=N bonds that easily generate free electrons will be formed at grain boundaries.

  4. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  5. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, Raoul B.

    1988-01-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  6. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

    DOEpatents

    Welch, James D.

    2000-01-01

    Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  7. A study on the properties of C-doped Ge8Sb2Te11 thin films during an amorphous-to-crystalline phase transition

    NASA Astrophysics Data System (ADS)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2016-04-01

    In this work, we evaluated the structural, electrical and optical properties of carbon-doped Ge8Sb2Te11 thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and carbon-doped Ge8Sb2Te11 films of 250 nm in thickness were deposited on p-type Si (100) and glass substrates by using a RF magnetron reactive co-sputtering system at room temperature. The fabricated films were annealed in a furnance in the 0 ~ 400°C temperature range. The structural properties were analyzed by using X-ray diffraction (XRD), and the result showed that the carbon-doped Ge8Sb2Te11 had a face-centeredcubic (fcc) crystalline structure and an increased crystallization temperature ( T c ). An increase in the T c leads to thermal stability in the amorphous state. The optical properties were analyzed by using an UV-Vis-IR spectrophotometer, and the result showed an increase in the optical-energy band gap ( E op ) in the crystalline materials and an increase in the E op difference (Δ E op ), which is a good effect for reducing the noise in the memory device. The electrical properties were analyzed by using a 4-point probe, which showed an increase in the sheet resistance ( R s ) in the amorphous state and the crystalline state, which means a reduced programming current in the memory device.

  8. First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN Semiconductors

    SciTech Connect

    Schulthess, Thomas C; Temmerman, Walter M; Szotek, Zdzislawa; Svane, Axel; Petit, Leon

    2007-01-01

    We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.

  9. Characterization and Electrical Properties of Al-Doped Cu(In,Ga)Se2 Semiconductors with Various Cu Contents

    NASA Astrophysics Data System (ADS)

    Monsefi, Mehrdad; Kuo, Dong-Hau

    2014-04-01

    Cu(In,Ga)Se2 (CIGSe) semiconductor, which shows record photovoltaic conversion efficiencies near 20%, has become a leading material for thin-film solar cell applications. In this work, Al-doped CIGSe (Al-CIGSe) bulk material with different Cu contents has been prepared by a liquid-phase reactive sintering method at 650°C. Sintering of the Al-CIGSe bulk material has been carried out in the presence of Sb2S3 and Te. The bulk Cu x [(In0.6Al0.1)Ga0.3]Se2 semiconductor was n-type for x = 0.7 and p-type for higher Cu content. The defect chemistry of Al-CIGSe was studied by measuring the electrical properties as a function of copper content. The changes in the conductivity type and carrier concentration were related to defect states involving Cu vacancy and antisite defects of In Cu 2+ and Cu B 2 - in a Cu B IIISe2-type phase. The lattice parameters were in good agreement with other evidence for the existence of different defect states.

  10. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

    NASA Astrophysics Data System (ADS)

    Schulthess, T. C.; Temmerman, W. M.; Szotek, Z.; Svane, A.; Petit, L.

    2007-04-01

    We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

  11. Magnesium-doped zinc oxide nanorod-nanotube semiconductor/p-silicon heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Caglar, Yasemin; Görgün, Kamuran; Ilican, Saliha; Caglar, Mujdat; Yakuphanoğlu, Fahrettin

    2016-08-01

    Nanostructured zinc oxide material is usable in electronic device applications such as light-emitting diodes, heterojunction diode, sensors, solar cell due to its interesting electrical conductivity and optical properties. Magnesium-doped zinc oxide nanorod (NR)-nanotube (NT) films were grown by microwave-assisted chemical bath deposition to fabricate ZnO-based heterojunction diode. It is found that ZnO hexagonal nanorods turn into hexagonal nanotubes when the Mg doping ratio is increased from 1 to 10 %. The values of the optical band gap for 1 % Mg-doped ZnO NR and 10 % Mg-doped ZnO NT films are found to be 3.14 and 3.22 eV, respectively. The n-ZnO:Mg/p-Si heterojunction diodes were fabricated. The diodes exhibited a rectification behavior with ideality factor higher than unity due to the presence of surface states in the junction and series resistance. The obtained results indicate that Mg doping improves the electrical and optical properties of ZnO.

  12. Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

    NASA Astrophysics Data System (ADS)

    Alston, Robert; Iyer, Shanthi; Bradley, Tanina; Lewis, Jay; Cunningham, Garry; Forsythe, Eric

    2014-02-01

    Low temperature gallium tin zinc oxide (GSZO) based thin film transistors fabricated on silicon has been investigated as a potential indium free transparent amorphous oxide semiconductor thin film transistor (TAOS TFT) with potential device applications on plastic substrates. A comprehensive and detailed study on the performance of GSZO TFTs has been carried out by studying the effects of processing parameters such as deposition temperature and annealing temperature/duration, as well as the channel thickness with all temperatures held below 150 °C. Variety of characterization techniques, namely Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and x-ray reflectivity (XRR) in addition to I-V and C-V measurements were employed to determine the effects of the above parameters on the composition and quality of the channel. Optimized TFT characteristics of ID=3×10-7 A, ION/OFF =2×106, VON ~ -2 V, SS ~ 1 V/dec and μFE = 0.14 cm2/V· s with a ΔVON of 3.3 V under 3 hours electrical stress were produced.

  13. Electrochemical performance of NiO-doped LiFePO4/C cathode materials prepared from amorphous FePO4 · xH2O

    NASA Astrophysics Data System (ADS)

    Mahmud, Iqbal; Kim, Dong-Seob; Ur, Soon-Chul

    2016-05-01

    LiFePO4/C composites are prepared from amorphous FePO4 · xH2O and are modified with NiO (0.0, 0.01, 0.02, 0.03, and 0.04 mol) by using a solid-state reaction process with a spex milling system. The crystalline structure and the morphology of synthesized powders have been characterized by using X-ray diffraction (XRD) and scanning electron microscope (SEM). The XRD patterns indicate a complete solid solution for all the NiO-doped LiFePO4/C composites. The SEM images show that the sizes of the particles produced are distributed in the range of 200 - 300 nm. The electrochemical performances have been evaluated by using an impedance measurement and a galvanostatic charge/discharge test. The initial properties and impedance measurement reveal different improvements for different amounts of NiO doping in LiFePO4/C. A maximum capacity of 158.8 mAh/g at 0.1 C has been achieved LiFePO4/C doped with NiO at 0.01 mol. The present work reveals that the newly processed composite of LiFePO4/C doped with a small amount of NiO may be a promising material for using in a lithium-ion battery.

  14. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    SciTech Connect

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  15. Rhodium-doped barium titanate perovskite as a stable p-type semiconductor photocatalyst for hydrogen evolution under visible light.

    PubMed

    Maeda, Kazuhiko

    2014-02-12

    Rhodium-doped barium titanate (BaTiO3:Rh) powder was prepared by the polymerized complex (PC) method, and the photocatalytic activity for H2 evolution from water was examined. BaTiO3 is a wide-gap n-type semiconductor having a band gap of 3.0 eV. Doping Rh species into the lattice of BaTiO3 resulted in the formation of new absorption bands in visible light region. Upon visible light (λ > 420 nm), BaTiO3:Rh modified with nanoparticulate Pt as a water reduction promoter was capable of producing H2 from water containing an electron donor such as methanol and iodide. The best material prepared by the PC method exhibited higher activity than that made by a conventional solid-state reaction method. Visible-light-driven Z-scheme water splitting was also accomplished using Pt/BaTiO3:Rh as a building block for H2 evolution in combination with PtOx-loaded WO3 as an O2 evolution photocatalyst in the presence of an IO3(-)/I(-) shuttle redox mediator. Photoelectrochemical analysis indicated that a porous BaTiO3:Rh electrode exhibited cathodic photoresponse due to water reduction in a neutral aqueous Na2SO4 solution upon visible light.

  16. Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

    SciTech Connect

    Sivagamasundari, A.; Chandrasekar, S.; Pugaze, R.; Kannan, R.; Rajagopan, S.

    2014-03-07

    Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn{sub 0.97}Al{sub 0.03}O, 463 K for Zn{sub 0.94}Al{sub 0.03}Li{sub 0.03}O, and 503 K for Zn{sub 0.91}Al{sub 0.03}Li{sub 0.03}Mn{sub 0.03}O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

  17. Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

    NASA Astrophysics Data System (ADS)

    Sivagamasundari, A.; Chandrasekar, S.; Pugaze, R.; Rajagopan, S.; Kannan, R.

    2014-03-01

    Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn0.97Al0.03O, 463 K for Zn0.94Al0.03Li0.03O, and 503 K for Zn0.91Al0.03Li0.03Mn0.03O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

  18. Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor

    SciTech Connect

    Cho, Yong Chan; Kim, Sung-Jin; Lee, Seunghun; Kim, Su Jae; Cho, Chae Ryong; Nahm, Ho-Hyun; Park, Chul Hong; Jeong, Il Kyoung; Park, Sungkyun; Hong, Tae Eun; Kuroda, Shinji; Jeong, Se-Young

    2009-10-26

    We report a reversible manipulation of short-range spin ordering in Co-doped ZnO through hydrogenation and dehydrogenation processes. In both magnetic-circular dichroism and superconducting quantum interference device measurements, the ferromagnetism was clearly induced and removed by the injection and ejection of hydrogen, respectively. The x-ray photoelectron spectroscopy results and the first-principles electronic structure calculations consistently support the dependence of the ferromagnetism on the hydrogen position and the contribution of transition metal ions. The results suggest the ferromagnetic interaction between Co ions can be reversibly controlled by the hydrogen-mediated intrinsic spin ordering in Co doped ZnO.

  19. Tuning the emission colors of semiconductor nanocrystals beyond their bandgap tunability: all in the dope.

    PubMed

    Jana, Santanu; Manna, Goutam; Srivastava, Bhupendra B; Pradhan, Narayan

    2013-11-25

    Adopting the concept of one dopant for one color, all the prominent emitting colors in the visible windows are obtained by doping selective dopants (Ag, Cu, Ni, and Cu) in an appropriate host (alloy of Cdx Zn1-x S) with fixed size/composition and bandgap. Analyzing the origin of these emissions the relative position of respective dopant states are correlated.

  20. CO2 -Assisted Fabrication of Two-Dimensional Amorphous Molybdenum Oxide Nanosheets for Enhanced Plasmon Resonances.

    PubMed

    Liu, Wei; Xu, Qun; Cui, Weili; Zhu, Chuanhui; Qi, Yuhang

    2017-02-01

    As a remarkable class of plasmonic materials, two dimensional (2D) semiconductor compounds have attracted attention owing to their controlled manipulation of plasmon resonances in the visible light spectrum, which outperforms conventional noble metals. However, tuning of plasmonic resonances for 2D semiconductors remains challenging. Herein, we design a novel method to obtain amorphous molybdenum oxide (MoO3 ) nanosheets, in which it combines the oxidation of MoS2 and subsequent supercritical CO2 -treatment, which is a crucial step for the achievement of amorphous structure of MoO3 . Upon illumination, hydrogen-doped MoO3 exhibits tuned surface plasmon resonances in the visible and near-IR regions. Moreover, a unique behavior of the amorphous MoO3 nanosheets has been found in an optical biosensing system; there is an optimum plasmon resonance after incubation with different BSA concentrations, suggesting a tunable plasmonic device in the near future.

  1. Radiation-induced amorphization of Ce-doped Mg2Y8(SiO4)6O2 silicate apatite

    NASA Astrophysics Data System (ADS)

    Zhou, Jianren; Yao, Tiankai; Lian, Jie; Shen, Yiqiang; Dong, Zhili; Lu, Fengyuan

    2016-07-01

    Ce-doped Mg2Y8(SiO4)6O2 silicate apatite (Ce = 0.05 and 0.5) were irradiated with 1 MeV Kr2+ ion beam irradiation at different temperatures and their radiation response and the cation composition dependence of the radiation-induced amorphization were studied by in situ TEM. The two Ce-doped Mg2Y8(SiO4)6O2 silicate apatites are sensitive to ion beam induced amorphization with a low critical dose (0.096 dpa) at room temperature, and exhibits significantly different radiation tolerance at elevated temperatures. Ce concentration at the apatite AI site plays a critical role in determining the radiation response of this silicate apatite, in which the Ce3+ rich Mg2Y7.5Ce0.5(SiO4)6O2 displays lower amorphization susceptibility than Mg2Y7.95Ce0.05(SiO4)6O2 with a lower Ce3+ occupancy at the AI sites. The critical temperature (Tc) and activation energy (Ea) change from 667.5 ± 33 K and 0.162 eV of Mg2Y7.5Ce0.5(SiO4)6O2 to 963.6 ± 64 K and 0.206 eV of Mg2Y7.95Ce0.05(SiO4)6O2. We demonstrate that the radiation tolerance can be controlled by varying the chemical composition, and enhanced radiation tolerance is achieved by increasing the Ce concentration at the AI site.

  2. MnTe semiconductor-sensitized boron-doped TiO2 and ZnO photoelectrodes for solar cell applications.

    PubMed

    Tubtimtae, Auttasit; Arthayakul, Khanittha; Teekwang, Bussayanee; Hongsith, Kritsada; Choopun, Supab

    2013-09-01

    We report a new tailoring MnTe semiconductor-sensitized solar cells (MnTe SSCs) using successive ionic layer adsorption and reaction (SILAR) technique. X-ray diffraction and SAED patterns reveal the orthorhombic MnTe and cubic MnTe2 phases were grown on boron-doped TiO2 and ZnO nanoparticles. The diameter of MnTe NPs ranged from 15 to 30nm on both B-doped metal oxide structures. The energy gaps of metal oxide become narrower after boron doping, which have an advantage for enhancing the light absorption from UV to visible region. Also, the energy gap of MnTe NPs on B-doped metal oxide was determined ~1.27-1.30eV. The best power conversion efficiency (η) of 0.033% and 0.030% yielded from B-doped TiO2/MnTe(7) and B-doped ZnO/MnTe(9), respectively. The reduction in power conversion efficiency by 103% and 91% was due to the absence of boron doping into TiO2 and ZnO nanostructures, respectively.

  3. P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors

    NASA Astrophysics Data System (ADS)

    Herrbach, J.; Revaux, A.; Vuillaume, D.; Kahn, A.

    2016-08-01

    In this work, we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layers in organic photodetectors processed by solution. As Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is known to be sensitive to humidity, oxygen, and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) p-doped with the dopant tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF3)3) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons into the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9 × 1013 cm (Hz)1/2 (W)-1, competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.

  4. Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon

    NASA Astrophysics Data System (ADS)

    Shimizu, Tatsuo; Shimada, Masaki; Kumeda, Minoru

    2002-05-01

    Different values are obtained for dangling-bond (DB) densities evaluated by electron spin resonance (ESR) and the constant photocurrent method (CPM) in undoped and N-doped hydrogenated amorphous silicon (a-Si:H) films with various thicknesses during light-soakings using white light and red light. The origin of the difference was analyzed by taking into account the inhomogeneous distribution of photocreated DBs across the film thickness caused by the penetration depth of the light being less than the film thickness. The main cause of the difference in undoped a-Si:H was found to be the inhomogeneous distribution of photocreated DBs, whereas the main cause in N-doped a-Si:H was found to be the presence of a large amount of negatively charged DBs inactive to ESR. The presence of the thin near-surface layer with a high density of DBs blind to CPM also contributes to the difference between ESR and CPM DB densities both in undoped and N-doped a-Si:H.

  5. Fabrication and characterization of rare earth doped wide bandgap semiconductors for spectral storage

    NASA Astrophysics Data System (ADS)

    Sly, Mohamed Fawzy

    Powder samples of MgS and CaS, singly doped with Eu and doubly doped with Eu and Ce, were synthesized for their usage in spectral storage. Thin films of these materials were fabricated using the pulsed laser deposition (PLD) technique. This fast and simple technique is superior to the single crystal growth or molecular beam epitaxy (MBE) as far as the storage material requirements are concerned. High optical quality films of MgS:Eu and CaS:Eu have been grown and tested. Polycrystalline powder samples of MgS and CaS were synthesized using high temperature reduction of commercially available magnesium and calcium sulfates. These materials were singly doped with rare earth lanthanides using high temperature diffusion in powder forms. Rare earth lanthanide impurities in very small concentrations are necessary for optical applications such as spectral storage for which all the materials prepared during the course of this study were made. Thin films of rare earth doped calcium and magnesium sulfides have been produced by using pulsed laser deposition (PLD) technique. Coating of the reactive surfaces of the PLD chamber with SiC has been performed to make them resistant to the corrosive environment and the by products of the deposition process. Solid targets needed for thin films were fabricated from the synthesized polycrystalline powders by high-pressure cold compression technique. Deposition of thin films of CaS and MgS has been performed and to protect these films from the environment, capping layers of aluminum oxide (Al2O 3) or ZnS have been deposited over the CaS and MgS thin films. In magnesium sulfide, oxygen doped magnesium sulfide and calcium sulfides, europium centers occur in different spectral regions. Therefore, multi-layer thin film structures were fabricated to allow for higher density of spectral storage. Various characterization techniques such as optical microscopy, X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy have

  6. Effect of doping on amplitude modulation of space-charge wave in semiconductor quantum plasma

    NASA Astrophysics Data System (ADS)

    Banerjee, Sreyasi; Ghosh, Basudev

    2017-04-01

    To describe the modulational instability of space-charge waves in an n-type compensated semiconductor plasma, a nonlinear Schrödinger equation has been derived by using quantum hydrodynamical model and standard multiple scale perturbation technique. It has been shown that compensation factor (i.e. relative proportion of donor, acceptor and intrinsic carrier concentrations) and quantum diffraction parameter play important role in generating bright and dark envelope solitons within the semiconductor. Instability growth rate is also found to depend sensitively on the compensation factor and quantum diffraction parameter. From the linear dispersion relation it has been found that inclusion of quantum parameter gives rise to two new wave modes of purely quantum origin. Further the effect of compensation factor and quantum diffraction parameter on the linear dispersion characteristics has been analyzed. It has also been found that due to parabolicity of conduction band the group velocity of space-charge wave becomes dependent on compensation factor and quantum diffraction parameter.

  7. Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

    NASA Astrophysics Data System (ADS)

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Zhao, Jianfa; Zhao, Guoqiang; Yu, Shuang; Wang, Xiancheng; Liu, Qingqing; Jin, Changqing

    2016-11-01

    We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMny)As with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,Mn)As. No ferromagnetic order occurs with single (Zn,Co) or (Zn, Mn) substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ˜40 K. The maximum saturation moment of the this system reached to 2.17 μB /Mn , which is comparable to that of Li (Zn,Mn)As. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in "111" LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,Mn)As, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

  8. Development of AIIBVI Semiconductors Doped with Cr for IR Laser Application

    DTIC Science & Technology

    2002-01-01

    84105, Israel ABSTRACT Electrical and optical measurements obtained with CdSe single crystals doped with chromium from a gas source CrSe over a wide...impurity and intrinsic defects. The low temperature annealing of CdSe crystals in CrSe atmosphere allows obtaining high electron mobility up to 9000 cm...chalcogenides such as ZnSe and CdSe [1, 2]. Transition metals incorporated into Zn(Cd)Se substitute metallic atoms and create deep levels in the band

  9. Boron and Nitrogen Doped Single walled Carbon Nanotubes as Possible Dilute Magnetic Semiconductors

    PubMed Central

    2007-01-01

    The structure of single walled armchair and zig-zag carbon nanotubes having 70 atoms and two carbons replaced by boron or nitrogen is obtained at minium energy using HF/6-31G* molecular orbital theory. The calculations show that the ground state of the zig-zag tubes is a triplet state while for the armchair tubes it is a singlet. In the zig-zag tubes the density of states at the Fermi level is greater for the spin down states compared to the spin up state indicating that the doped tubes could be ferromagnetic.

  10. Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Nomura, Kenji; Kamiya, Toshio; Ikenaga, Eiji; Yanagi, Hiroshi; Kobayashi, Keisuke; Hosono, Hideo

    2011-04-01

    In a previous work, we examined subgap states in highly doped amorphous In-Ga-Zn-O (a-IGZO) films by hard x-ray photoelectron spectroscopy (HX-PES) and found they had subgap electronic states above the valence band maximum (VBM) with the densities > 5 × 1020 cm-3 and just below the Fermi level with the densities > 5 × 1019 cm-3 [K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, Appl. Phys. Lett. 92, 202117 (2008)]; however, their electron densities (Ne > 3 × 1019 cm-3) are rather high and not compatible with rational properties required for active channel layers in thin-film transistors (TFTs). In this work, we report the effects of Ne and thermal annealing on the subgap states in order to provide the data useful for actual TFTs. It was found that the low-Ne a-IGZO films had extra subgap states above VBM similar to the previous report, but their densities were as small as ˜2.0 × 1020 cm-3 for the highly resistive, wet-annealed a-IGZO films. Angle-dependent HX-PES revealed that the subgap states above VBM concentrate in the surface region. The O 1s peak indicated that the wet annealing suppressed the generation of subgap states by terminating these states with -OH bonds. The subgap states below EF were observed commonly in all the samples including ZnO, crystalline (c-) IGZO and a-IGZO. It is concluded that these states below EF are neither related to the disordered structures of a-IGZO nor to their TFT characteristics. It is considered that these states are related to the metastable states created by the high-energy photons in vacuum.

  11. Optical investigations of noncrystalline semiconductors. [considering silicon and boron films

    NASA Technical Reports Server (NTRS)

    Blum, N. A.; Feldman, C.; Moorjani, K.

    1973-01-01

    Three areas of investigation into the properties of amorphous silicon and boron are reported: (1) optical properties of elemental amorphous semiconductors; (2) Mossbauer studies of disordered systems; and (3) theoretical aspects of disordered semiconductors.

  12. Structural and Optical properties of Er doped ZnO diluted magnetic semiconductor nano thin films produced by sol gel method

    NASA Astrophysics Data System (ADS)

    Tasci, A. Tolga; Ozturk, Ozgur; Asikuzun, Elif; Arda, Lutfi; Celik, Sukru; Terzioglu, Cabir

    Undoped and Er doped ZnO (Zn1-xErxO) transparent semiconductor thin films were coated using sol-gel method on non-alkali glass. Erbium was doped 1%, 2%, 3%, 4% and 5% ratio. Methanol and monoethanolamine were used as solvent and stabilizer. In this study, the effect of Er doping was examined on the structural and optical properties of ZnO DMS thin films. XRD, SEM and UV-VIS-NIR spectrometer measurements were performed for the structural and optical characterization. XRD results showed that, all of Er doped ZnO thin films have a hexagonal structure. The optical transmittance of rare earth element (Er) doped ZnO thin films were increased. The Er doped ZnO thin films showed high transparency (>84) in the visible region (400-700 nm). This research has been supported by the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KUBAP-03/2013-41 and the Scientific and Technological Research Council of Turkey (TUBITAK) Project No. 114F259.

  13. Density-functional calculations of carbon doping in III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Latham, C. D.; Jones, R.; Öberg, S.; Briddon, P. R.

    2001-04-01

    This article reports the results of investigations based on local-density-functional theory into the relative formation energies for single substitutional carbon atoms in nine III-V compound semiconductors. The calculations are performed using a supercell formalism derived from the AIMPRO real-space cluster method. Only a very slight trend is discernible down the periodic table. When a metal atom is replaced with carbon, it is energetically least favorable in the phosphides, very marginally lower energy in the arsenides, and ~0.5-0.7 eV lower in the antimonides. The situation is approximately reversed when a P, As, or Sb atom is substituted by a C atom: for the In compounds the energy is ~0.4-0.8 eV higher than for the Al and Ga compounds.

  14. Optical properties of amorphous and crystalline Sb-doped SnO2 thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

    NASA Astrophysics Data System (ADS)

    So, Hyeon Seob; Park, Jun-Woo; Jung, Dae Ho; Ko, Kun Hee; Lee, Hosun

    2015-08-01

    We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO2) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO2 targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO2:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO2:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO2:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (NHall) and electron Hall mobilities (μHall). The carrier concentrations and mobilities increased from 2.6 × 1019 cm-3 and 1.0 cm2/(V s) to 2.0 × 1020 cm-1 and 7.2 cm2/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO2 films are unintentionally n-type doped. Assuming that the NHall and optical carrier concentrations (Nopt) were the same, we obtained the effective masses of the SnO2:Sb thin films with increasing Sb compositions. The effective masses of the SnO2:Sb thin films increased from 0.245 m0 to 0.4 m0 with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We discussed the relation between the optical (μopt) and Hall (μHall) mobilities as a function of Sb contents and grain sizes.

  15. Optical properties of amorphous and crystalline Sb-doped SnO{sub 2} thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

    SciTech Connect

    So, Hyeon Seob; Park, Jun-Woo; Jung, Dae Ho; Ko, Kun Hee; Lee, Hosun

    2015-08-28

    We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO{sub 2}) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO{sub 2} targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO{sub 2}:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO{sub 2}:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO{sub 2}:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (N{sub Hall}) and electron Hall mobilities (μ{sub Hall}). The carrier concentrations and mobilities increased from 2.6 × 10{sup 19 }cm{sup −3} and 1.0 cm{sup 2}/(V s) to 2.0 × 10{sup 20 }cm{sup −1} and 7.2 cm{sup 2}/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO{sub 2} films are unintentionally n-type doped. Assuming that the N{sub Hall} and optical carrier concentrations (N{sub opt}) were the same, we obtained the effective masses of the SnO{sub 2}:Sb thin films with increasing Sb compositions. The effective masses of the SnO{sub 2}:Sb thin films increased from 0.245 m{sub 0} to 0.4 m{sub 0} with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We

  16. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1‑xMnxTe

    NASA Astrophysics Data System (ADS)

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-05-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality.

  17. Near-infrared strong coupling between metamaterials and epsilon-near-zero modes in degenerately doped semiconductor nanolayers

    DOE PAGES

    Campione, Salvatore; Wendt, Joel R.; Keeler, Gordon Arthur; ...

    2016-01-14

    Epsilon-near-zero (ENZ) modes provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a strongly coupled system at near-infrared frequencies comprising plasmonic metamaterial resonators and ENZ modes supported by degenerately doped semiconductor nanolayers. In strongly coupled systems that combine optical cavities and intersubband transitions, the polariton splitting (i.e., the ratio of Rabi frequency to bare cavity frequency) scales with the square root of the wavelength, thus favoring the long-wavelength regime. In contrast, we observe that the polariton splitting in ENZ/metamaterial resonator systems increases linearly with the thickness of the nanolayer supporting the ENZ modes.more » In this work, we employ an indium-tin-oxide nanolayer and observe a large experimental polariton splitting of approximately 30% in the near-infrared. As a result, this approach opens up many promising applications, including nonlinear optical components and tunable optical filters based on controlling the polariton splitting by adjusting the frequency of the ENZ mode.« less

  18. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1−xMnxTe

    PubMed Central

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-01-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality. PMID:27160657

  19. Near-infrared strong coupling between metamaterials and epsilon-near-zero modes in degenerately doped semiconductor nanolayers

    SciTech Connect

    Campione, Salvatore; Wendt, Joel R.; Keeler, Gordon Arthur; Luk, Ting S.

    2016-01-14

    Epsilon-near-zero (ENZ) modes provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a strongly coupled system at near-infrared frequencies comprising plasmonic metamaterial resonators and ENZ modes supported by degenerately doped semiconductor nanolayers. In strongly coupled systems that combine optical cavities and intersubband transitions, the polariton splitting (i.e., the ratio of Rabi frequency to bare cavity frequency) scales with the square root of the wavelength, thus favoring the long-wavelength regime. In contrast, we observe that the polariton splitting in ENZ/metamaterial resonator systems increases linearly with the thickness of the nanolayer supporting the ENZ modes. In this work, we employ an indium-tin-oxide nanolayer and observe a large experimental polariton splitting of approximately 30% in the near-infrared. As a result, this approach opens up many promising applications, including nonlinear optical components and tunable optical filters based on controlling the polariton splitting by adjusting the frequency of the ENZ mode.

  20. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

    SciTech Connect

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Gao, Yuhan; Ma, Xiangyang Yang, Deren

    2015-04-06

    We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.

  1. High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer

    SciTech Connect

    Hai, Pham Nam; Yatsui, Takashi; Ohtsu, Motoichi; Tanaka, Masaaki

    2014-09-21

    We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p⁺-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ~700 K for a low input electrical power density of 0.4 W/cm², while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.

  2. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    NASA Astrophysics Data System (ADS)

    Kizu, Takio; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto; Tsukagoshi, Kazuhito

    2016-07-01

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (VO) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense VO in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  3. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  4. Fast scanning calorimetry studies of the glass transition in doped amorphous solid water: Evidence for the existence of a unique vicinal phase

    NASA Astrophysics Data System (ADS)

    McCartney, Stephanie A.; Sadtchenko, Vlad

    2013-02-01

    The fast scanning calorimetry (FSC) was employed to investigate glass transition phenomena in vapor deposited amorphous solid water (ASW) films doped with acetic acid, pentanol, and carbon tetrachloride. In all three cases, FSC thermograms of doped ASW films show well pronounced glass transitions at temperatures near 180 K. Systematic FSC studies of the glass transition temperature and the excess heat capacity dependence on the concentration of impurities indicate the possible existence of two distinct non-crystalline phases of H2O in binary aqueous solutions. According to our conjecture, bulk pure ASW is a glass at temperatures up to its crystallization near 205 K. However, guest molecules in the ASW matrix may be enveloped in an H2O phase which undergoes a glass transition prior to crystallization. In the case of CH3COOH, we estimate that such a viscous liquid shell contains approximately 25 H2O molecules. We discuss the implications of these findings for past studies of molecular kinetics in pure vitreous water and in binary aqueous solutions.

  5. Fast scanning calorimetry studies of the glass transition in doped amorphous solid water: evidence for the existence of a unique vicinal phase.

    PubMed

    McCartney, Stephanie A; Sadtchenko, Vlad

    2013-02-28

    The fast scanning calorimetry (FSC) was employed to investigate glass transition phenomena in vapor deposited amorphous solid water (ASW) films doped with acetic acid, pentanol, and carbon tetrachloride. In all three cases, FSC thermograms of doped ASW films show well pronounced glass transitions at temperatures near 180 K. Systematic FSC studies of the glass transition temperature and the excess heat capacity dependence on the concentration of impurities indicate the possible existence of two distinct non-crystalline phases of H2O in binary aqueous solutions. According to our conjecture, bulk pure ASW is a glass at temperatures up to its crystallization near 205 K. However, guest molecules in the ASW matrix may be enveloped in an H2O phase which undergoes a glass transition prior to crystallization. In the case of CH3COOH, we estimate that such a viscous liquid shell contains approximately 25 H2O molecules. We discuss the implications of these findings for past studies of molecular kinetics in pure vitreous water and in binary aqueous solutions.

  6. Influence of doping (Ti, V, Zr, W) and annealing on the sp{sup 2} carbon structure of amorphous carbon films

    SciTech Connect

    Adelhelm, C.; Balden, M.; Rinke, M.; Stueber, M.

    2009-02-01

    The influence of the transition metal (Ti, V, Zr, W) doping on the carbon matrix nanostructuring during the thin film growth and subsequent annealing is investigated. Pure and metal-doped amorphous carbon films (a-C, a-C:Me) were deposited at room temperature by nonreactive magnetron sputtering. The carbon structure of as-deposited and postannealed (up to 1300 K) samples was analyzed by x-ray diffraction (XRD) and Raman spectroscopy. The existence of graphenelike regions in a-C is concluded from a (10) diffraction peak. A comparison of the XRD and Raman results suggests that XRD probes only the small amount of 2-3 nm large graphenelike regions, whereas the majority of the sp{sup 2} phase is present in smaller distorted aromatic clusters which are probed only by Raman spectroscopy. Annealing leads to an increase in the graphene size and the aromatic cluster size. During the carbon film growth the addition of metals enhances ordering of sp{sup 2} carbon in sixfold aromatic clusters compared to a-C; Ti, and Zr showing the strongest effect, W the lowest. This order qualitatively corresponds with the catalytic activity of the respective carbides found during graphitization of carbide-doped graphites published in the literature. With annealing, carbide crystallite formation and growth occurs in a-C:Me films, which destroys the initial carbon structure, reduces the size of the initially formed aromatic clusters and the differences in carbon structure introduced by different dopants. For high annealing temperatures the carbon structure of a-C:Me films is similar to that of a-C, and is determined only by the annealing temperature.

  7. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

    DOEpatents

    Yang, Liyou

    1993-10-26

    A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

  8. Stabilization of Kondo Semiconductor State by Sb Doping of CeNi1-σSn1+σ and the General Criterion of Its Appearance

    NASA Astrophysics Data System (ADS)

    Spałek, J.; Ślebarski, A.

    2008-07-01

    Semimetallic off-stoichiometric CeNi1-δSn1+δ-xSbx system with δ≈0.06 is shown to transform into a Kondo semiconductor upon the substitution of few percent of Sb for Sn. The full-gap formation is associated with f-electron localization induced by the combined effect of the collective Kondo-singlet formation and the atomic disorder. Namely, the extra valence electrons introduced with the Sb doping (one per Sb atom) contribute additionally to the formation of the collective Kondo spin-singlet state at low temperatures, as seen by a substantial reduction of the magnetic susceptibility. The precise general definition of the Kondo semiconductor is provided and the difference with either the simple band or the Mott-Hubbard insulators is stressed.

  9. Spectroscopic Studies of Bulk As2S3 Glasses and Amorphous Films Doped with Dy, Sm and Mn

    DTIC Science & Technology

    2001-06-01

    of rare earth (Dy and Sm) and transition metal (Mn) luminescent impurities on the optical properties of As2S3 glass is studied in a wide spectral...with glassy As2S3 doped with optically active rare - earth and transition metal ions, because they alter optical, photoelectrical and transport...involving conduction bands and edge tail states overlap with some electronic transitions due to the discrete levels of the rare - earth ions (Pr3’, Nd34

  10. Electronic structure of Fe-doped In2O3 magnetic semiconductor with oxygen vacancies: Evidence for F-center mediated exchange interaction

    NASA Astrophysics Data System (ADS)

    Hu, Shu-jun; Yan, Shi-shen; Lin, Xue-ling; Yao, Xin-xin; Chen, Yan-xue; Liu, Guo-lei; Mei, Liang-mo

    2007-12-01

    Based on the first-principles calculations, the electronic structure and magnetic properties of Fe-doped In2O3 were theoretically investigated. The presence of the predominating defects in oxide, i.e., oxygen vacancies, can lead to strong ferromagnetic coupling between the nearest neighboring Fe cations. Spin density and band-projected charge distribution in the vicinity of the oxygen vacancies reveal that the ferromagnetic exchange is mediated by the donor impurity state, which mainly consists of Fe :3d and Fe :4s electrons trapped in oxygen vacancies. Such results provide direct evidence for the F-center mediated exchange interaction in oxide-based magnetic semiconductors.

  11. Dispersion of the refractive index of a samarium-doped Se{sup 95}Te{sup 5} chalcogenide glassy semiconductor

    SciTech Connect

    Atayeva, S. U. Mekhtiyeva, S. I.; Isayev, A. I.

    2015-07-15

    The transmission spectrum of a Se{sup 95}Te{sup 5} chalcogenide glassy semiconductor doped with samarium (0.05, 0.1, 0.25, 0.5, and 1 at %) is studied; the Swanepoel method and the single-oscillator model are used to determine the oscillator energy E{sup 0}, dispersion energy E{sup d}, optical width of the band gap E{sup g}, and linear (n) and nonlinear (n{sup 2}) refractive indices. The changes in the values of these parameters as a result of doping are attributed to modification of the local structure and to a change in the concentration of defect states.

  12. Method and structure for passivating semiconductor material

    DOEpatents

    Pankove, Jacques I.

    1981-01-01

    A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

  13. Magnetism, half-metallicity and electrical transport properties of V- and Cr-doped semiconductor SnTe: A theoretical study

    SciTech Connect

    Liu, Y.; Bose, S. K.; Kudrnovský, J.

    2013-12-07

    This work presents results for the electronic structure, magnetic properties, and electrical resistivity of the semiconductor SnTe doped with 3d transition metals V and Cr. From the standpoint of potential application in spintronics, we look for half-metallic states and analyze their properties in both rock salt and zinc blende structures using ab initio electronic structure methods. In both cases, it is the Sn-sublattice that is doped with the transition metals, as has been the case with experiments performed so far. We find four half-metallic compounds at their optimized cell volumes. Results of exchange interactions and the Curie temperature are presented and analyzed for all the relevant cases. Resistivity calculation based on Kubo-Greenwood formalism shows that the resistivities of these alloys due to transition metal doping of the Sn-sublattice may vary, in most cases, from typical liquid metal or metallic glass value to 2–3 times higher. 25% V-doping of the Sn-sublattice in the rock salt structure gives a very high resistivity, which can be traced to high values of the lattice parameter resulting in drastically reduced hopping or diffusivity of the states at the Fermi level.

  14. NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.

    PubMed

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Tavakoli, Khadijeh; Babaheydari, Ali Kazemi; Moghimi, Masoumeh

    2012-09-01

    Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the (6,0) zigzag AlNNTs. We extended the DFT calculation to predict the electronic structure properties of Si-doped aluminum nitride nanotubes, which are very important for production of solid-state devices and other applications. To this aim, pristine and Si-doped AlNNT structures in two models (Si(N) and Si(Al)) were optimized, and then the electronic properties, the isotropic (CS(I)) and anisotropic (CS(A)) chemical shielding parameters for the sites of various (27)Al and (14)N atoms, NQR parameters for the sites of various of (27)Al and (14)N atoms, and quantum molecular descriptors were calculated in the optimized structures. The optimized structures, the electronic properties, NMR and NQR parameters, and quantum molecular descriptors for the Si(N) and Si(Al) models show that the Si(N) model is a more reactive material than the pristine or Si(Al) model.

  15. Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge{sub 1-x}Fe{sub x} with and without boron doping

    SciTech Connect

    Ban, Yoshisuke Wakabayashi, Yuki; Akiyama, Ryota; Nakane, Ryosho; Tanaka, Masaaki

    2014-09-15

    We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge{sub 1-x}Fe{sub x} films (x = 1.0 and 2.3%) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge{sub 1-x}Fe{sub x} films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (∼5 nm) were used as substrates. Owing to the low Fe content, the hole concentration and mobility in the Ge{sub 1-x}Fe{sub x} films were exactly estimated by Hall measurements because the anomalous Hall effect in these films was found to be negligibly small. By boron doping, we increased the hole concentration in Ge{sub 1-x}Fe{sub x} from ∼10{sup 18} cm{sup −3} to ∼10{sup 20} cm{sup −3} (x = 1.0%) and to ∼10{sup 19} cm{sup −3} (x = 2.3%), but no correlation was observed between the hole concentration and magnetic properties. This result presents a contrast to the hole-induced ferromagnetism in III-V ferromagnetic semiconductors.

  16. Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition

    SciTech Connect

    Katamune, Yūki Takeichi, Satoshi; Ohmagari, Shinya; Yoshitake, Tsuyoshi

    2015-11-15

    Boron-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with a boron-blended graphite target at a base pressure of <10{sup −3} Pa and at hydrogen pressures of ≤53.3 Pa. The hydrogenation effects on the electrical properties of the films were investigated in terms of chemical bonding. Hydrogen-scattering spectrometry showed that the maximum hydrogen content was 35 at. % for the film produced at 53.3-Pa hydrogen pressure. The Fourier-transform infrared spectra showed strong absorptions by sp{sup 3} C–H bonds, which were specific to the UNCD/a-C:H, and can be attributed to hydrogen atoms terminating the dangling bonds at ultrananocrystalline diamond grain boundaries. Temperature-dependence of the electrical conductivity showed that the films changed from semimetallic to semiconducting with increasing hydrogen pressure, i.e., with enhanced hydrogenation, probably due to hydrogenation suppressing the formation of graphitic bonds, which are a source of carriers. Carrier transport in semiconducting hydrogenated films can be explained by a variable-range hopping model. The rectifying action of heterojunctions comprising the hydrogenated films and n-type Si substrates implies carrier transport in tunneling.

  17. Doping effects on the hybridization gap and antiferromagnetic order in the Kondo semiconductor CeO s2A l10 studied by break-junction experiments

    NASA Astrophysics Data System (ADS)

    Kawabata, J.; Ekino, T.; Yamada, Y.; Okada, Y.; Sugimoto, A.; Muro, Y.; Takabatake, T.

    2017-01-01

    The Kondo semiconductors Ce T2A l10 (T =Ru and Os) exhibit antiferromagnetic (AFM) orders at unexpectedly high temperatures TN=27.0 and 28.5 K, respectively, whose mechanism remains in debate. We report the break-junction experiments on 4 f /5 d -hole and 5 d -electron doped CeO s2A l10 as well as nondoped CeR u2A l10 . The differential conductance spectra d I /d V for T =Os and Ru show three gap structures; two hybridization gaps V1, V2 and an AFM gap VAF, whose magnitudes for T =Os are 15 -50 % larger than for T =Ru . Doping of 4 f /5 d holes and 5 d electrons in CeO s2A l10 changes the d I /d V spectrum in very different ways. Nevertheless, in all cases, the suppression of V1 is well correlated with those of VAF and TN. Furthermore, the zero-bias conductance decreases on cooling below T* (>TN ) only in the doping region where V1 and VAF coexist. This fact indicates that the unusual AFM order is preceded by the decrease in the density of states in the presence of V1.

  18. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    NASA Astrophysics Data System (ADS)

    Rana, Amit Kumar; J, Aneesh; Kumar, Yogendra; M. S, Arjunan; Adarsh, K. V.; Sen, Somaditya; Shirage, Parasharam M.

    2015-12-01

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  19. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    SciTech Connect

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M. E-mail: paras.shirage@gmail.com; J, Aneesh; Adarsh, K. V.

    2015-12-07

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  20. Dependences of the electrical properties on the diameter and the doping concentration of the Si nanowire field effect transistors with a Schottky metal-semiconductor contact.

    PubMed

    You, Joo Hyung; Lee, Se Han; You, Chan Ho; Yu, Yun Seop; Kim, Tae Whan

    2010-05-01

    A compact model of the current-voltage (I-V) characteristics for the Si nanowire field effect transistor (FET) taking into account dependence of the analytical electrical properties on the diameter and the concentration of the Si nanowire of the FETs with a Schottky metal-semiconductor contact has been proposed. I-V characteristics of the nanowire FETs were analytically calculated by using a quantum drift-diffusion current transport model taking into account an equivalent circuit together with the quantum effect of the Si nanowires and a Schottky model at Schottky barriers. The material parameters dependent on different diameters and concentrations of the Si nanowire were numerically estimated from the physical properties of the Si nanowire. The threshold voltage, the mobility, and the doping density of the Si nanowire and the Schottky barrier height at a metal-Si nanowire heterointerface in the nanowire FET were estimated by using the theoretical model.

  1. Suppression of phase and supermode noise in a harmonic mode-locked erbium-doped fiber laser with a semiconductor-optical-amplifier-based high-pass filter.

    PubMed

    Lin, Gong-Ru; Wu, Ming-Chung; Chang, Yung-Cheng

    2005-07-15

    By operating an intracavity semiconductor-optical-amplifier- (SOA-) based high-pass filter at the nearly transparent current condition, the supermode noise (SMN), the relaxation oscillation, and the single-sideband (SSB) phase noise can be simultaneously suppressed in an actively mode-locked erbium-doped fiber laser (EDFL). The SOA at the nearly transparent condition enhances the SMN suppression ratio of the EDFL from 32 to 76 dB at the cost of the phase noise degrading from -114 to -104.2 dBc/Hz and broadening the pulse width from 36 to 61 ps. With an optical bandpass filter, the SSB phase noise and the SMN suppression ratio can be further improved to -110 dBc/Hz and 81 dB, respectively. The EDFL pulse can be further shortened to 3.1 ps with a time-bandwidth product of 0.63 after compression.

  2. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, Andreas M.; Haggerty, John S.; Danforth, Stephen C.

    1983-01-01

    A process for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by imgingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step.

  3. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, A.M.; Haggerty, J.S.; Danforth, S.C.

    1983-04-05

    A process is described for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by impingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step. 10 figs.

  4. Photo-induced Defects in Semiconductors

    NASA Astrophysics Data System (ADS)

    Redfield, David; Bube, Richard H.

    2006-03-01

    1. Introduction: metastable defects; 2. III-V compounds: DX2 and EL2 centers; 3. Other crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; 7. Photo-induced defect effects in devices; References; Index.

  5. NMR structural studies of PECVD amorphous silicon films

    NASA Astrophysics Data System (ADS)

    Cull, Thomas Sidley, Jr.

    The properties of plasma enhanced chemical vapor deposition (PECVD) amorphous semiconductor films vary depending upon preparation conditions and doping. Hydrogenated amorphous silicon films (a-Si:H) have some properties that make these films desirable for use in solar cells and photoreceptor devices. Maximizing electronic and structural properties of such films is key to their success. Nuclear magnetic resonance, and in particular deuterium magnetic resonance (DMR) for a-Si:H,D films, is a useful means to study the morphology of such samples. The location and motions of hydrogen and the chemically equivalent deuterium within an amorphous semiconductor film can be observed with NMR. The information from the NMR studies can be correlated with electronic properties studies to determine whether a given sample would make a successful photovoltaic device. This thesis focuses on three aspects of study: comparison of two samples that differ in the bias applied to the substrate upon which the amorphous films were grown; derivation of relaxation parameters for covalently bonded deuterium; development of a new pulse sequence "incremental spin echo double resonance (SEDOR)" to study the number of unlike spins that contribute to the local field of a given nuclei. Four significant conclusions can be drawn. First, the electronic quality as measured by the photoresponse product etamutau correlates with the broad Gaussian DMR spectral feature which arises from molecular hydrogen in sites that restrict motion. Second, the relaxation of nuclear magnetization under extreme inhomogeneous broadening can be modeled very well as the relaxation without spin diffusion to faster relaxing species within a sample. Third, incremental SEDOR has either a quantum mechanical or classical behavior depending upon the length of the pulse spacing in comparison to the spin-spin relaxation time. Fourth, the local field at the hydrogen of an HD pair within an a-Si:H,D sample is determined on average by

  6. Doping Effects on the Electronic Structure of an Anisotropic Kondo Semiconductor CeOs2Al10: An Optical Study with Re and Ir Substitution

    NASA Astrophysics Data System (ADS)

    Kimura, Shin-ichi; Takao, Hitoshi; Kawabata, Jo; Yamada, Yoshihiro; Takabatake, Toshiro

    2016-12-01

    An anisotropic Kondo semiconductor CeOs2Al10 exhibits an unusual antiferromagnetic order at rather high transition temperature T0 of 28.5 K. Two possible origins of the magnetic order have been proposed so far, one is the Kondo coupling of the hybridization between the conduction (c) and the 4f states and the other is the charge-density wave/charge ordering along the orthorhombic b-axis. To clarify the origin of the magnetic order, we have investigated the electronic structure of hole- and electron-doped CeOs2Al10 [Ce(Os1-yRey)2Al10 and Ce(Os1-xIrx)2Al10, respectively] by using optical conductivity spectra along the b-axis. The intensity of the c-f hybridization gap at ħω ˜ 50 meV continuously decreases from y = 0.10 to x = 0.12 via x = y = 0. On the other hand, the intensity of the charge excitation observed at ħω ˜ 20 meV has the maximum at x = y = 0 as similar with the doping dependence of T0. The fact that the charge excitation is strongly related to the magnetic order strengthens the possibility of the charge density wave/charge ordering as the origin of the magnetic order.

  7. (Ca,Na)(Zn,Mn){sub 2}As{sub 2}: A new spin and charge doping decoupled diluted ferromagnetic semiconductor

    SciTech Connect

    Zhao, K.; Chen, B. J.; Deng, Z.; Zhao, G. Q.; Zhu, J. L.; Liu, Q. Q.; Wang, X. C.; Han, W.; Frandsen, B.; Liu, L.; Cheung, S.; Uemura, Y. J.; Ning, F. L.; Munsie, T. J. S.; Medina, T.; Luke, G. M.; Carlo, J. P.; Munevar, J.; Zhang, G. M.; Jin, C. Q.

    2014-10-28

    Here, we report the successful synthesis of a spin- and charge-decoupled diluted magnetic semiconductor (DMS) (Ca,Na)(Zn,Mn){sub 2}As{sub 2}, crystallizing into the hexagonal CaAl{sub 2}Si{sub 2} structure. The compound shows a ferromagnetic transition with a Curie temperature up to 33 K with 10% Na doping, which gives rise to carrier density of n{sub p} ∼ 10{sup 20 }cm{sup −3}. The new DMS is a soft magnetic material with H{sub C} < 400 Oe. The anomalous Hall effect is observed below the ferromagnetic ordering temperature. With increasing Mn doping, ferromagnetic order is accompanied by an interaction between the local spin and mobile charge, giving rise to a minimum in resistivity at low temperatures and localizing the conduction electrons. The system provides an ideal platform for studying the interaction of the local spins and conduction electrons.

  8. Drastic changes in electronic properties of Kondo semiconductor CeRu2Al10 induced by Rh doping: Anisotropic transport properties in the antiferromagnetic ordered state

    NASA Astrophysics Data System (ADS)

    Tanida, H.; Nohara, H.; Nakagawa, F.; Yoshida, K.; Sera, M.; Nishioka, T.

    2016-10-01

    Electrical resistivity (ρ ), thermopower, and specific heat measurements have been performed on the novel Kondo semiconductor Ce (Ru1-xRhx) 2Al10 (x =0 , 0.02, 0.03, and 0.05), which has been attracting a great deal of interest due to an unusual antiferromagnetic (AFM) order below T0, in order to clarify the Rh doping effect on the anisotropy of the electronic properties in the ordered state. In CeRu2Al10 , ρ shows an anisotropic increase below T0 independently of the electric current direction. We propose the existence of two different mechanisms to explain the anisotropic increase of ρ . One is an isotropic charge gap which enhances ρ below T0 isotropically, although its origin is not known at present. The other is an anisotropic suppression of ρ which originates from the anisotropic c-f hybridization and is largest along the orthorhombic a axis. By the Rh doping, the anisotropic temperature dependence of ρ below T0 is drastically changed. For I ∥b , the increase is almost completely suppressed and a metallic-like behavior is observed, whereas it is small and isotropic for I ∥a and c . From these results, we propose that as a result of the destruction of the spin-gap excitation by the Rh doping, a metallic-like electronic state is formed along the b axis and the small isotropic charge gap is opened in the a c plane. By taking into account the present results and the still high T0 even in x =0.05 , we conclude that the AFM order in the Rh-doped CeRu2Al10 should be viewed as unusual as the AFM order in CeRu2Al10 although the localized character of the Ce-4 f electron is apparently enhanced by the Rh doping. We have also examined the evolution of the AFM ordered state from x =0 to x =0.05 , where the AFM ordered moment (mAF) is aligned along the c axis in x =0 and a axis in x =0.05 . From the results of those experiments in magnetic field, we have revealed that the spin reorientation from mAF∥c to mAF∥a takes place quite abruptly just at xc˜0

  9. Compensated amorphous silicon solar cell

    DOEpatents

    Devaud, Genevieve

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  10. Size- and Shape-dependent efficiency of PbSe nanocrystal and nanowire doped organic semiconductor photovoltaics

    NASA Astrophysics Data System (ADS)

    Li, Wenting; Murray, Christopher; Kagan, Cherie

    2009-03-01

    Hybrid solar cells based on nanocomposite organic semiconductors and IR sensitive PbSe nanocrystals (NCs) and nanowires (NWs) are fabricated and serve as a model system to test in PV devices. Wet chemical routes are used to synthesize PbSe NCs tunable in size, from 6 to 12nm in diameter, and in shape by tailoring the reaction temperature and selection of surfactants. PbSe NWs are also synthesized through oriented attachment in solution of NC building blocks to form straight, zigzag, helical, and branched NWs. We integrate PbSe NCs and NWs with the organic semiconductors P3HT and pentacene. We are able to fabricate organic-inorganic bulk heterojunctions with pentacene using a solution-processable precursor that is thermally converted to pentacene. We investigate the role of the organic semiconductor pentacene in the solar cell, both as a conductivity booster and as a more stable alternative to P3HT. We find that ligand exchange significantly increases photocurrent by replacing oleic acid ligands used in NC synthesis with shorter pyridine or octylamine ligands. We also report that tailoring the size and shape of the NCs and controlling the deposition and annealing conditions of the nanocomposites enhances the solar cell performance.

  11. Thermal transport in amorphous materials: a review

    NASA Astrophysics Data System (ADS)

    Wingert, Matthew C.; Zheng, Jianlin; Kwon, Soonshin; Chen, Renkun

    2016-11-01

    Thermal transport plays a crucial role in performance and reliability of semiconductor electronic devices, where heat is mainly carried by phonons. Phonon transport in crystalline semiconductor materials, such as Si, Ge, GaAs, GaN, etc, has been extensively studied over the past two decades. In fact, study of phonon physics in crystalline semiconductor materials in both bulk and nanostructure forms has been the cornerstone of the emerging field of ‘nanoscale heat transfer’. On the contrary, thermal properties of amorphous materials have been relatively less explored. Recently, however, a growing number of studies have re-examined the thermal properties of amorphous semiconductors, such as amorphous Si. These studies, which included both computational and experimental work, have revealed that phonon transport in amorphous materials is perhaps more complicated than previously thought. For instance, depending on the type of amorphous materials, thermal transport occurs via three types of vibrations: propagons, diffusons, and locons, corresponding to the propagating, diffusion, and localized modes, respectively. The relative contribution of each of these modes dictates the thermal conductivity of the material, including its magnitude and its dependence on sample size and temperature. In this article, we will review the fundamental principles and recent development regarding thermal transport in amorphous semiconductors.

  12. Rutile-type Co doped SnO2 diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    NASA Astrophysics Data System (ADS)

    Mehraj, Sumaira; Shahnawaze Ansari, M.; Alimuddin

    2013-12-01

    Nanoparticles of basic composition Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O-H, Sn-O and Sn-O-Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σac) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Sn2+ and Sn4+ as well as between Co2+ and Co3+ ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M-H curves from 0.01 to 0.1% Co doped SnO2 samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO2 displayed paramagnetism which vanished at higher values of magnetic field.

  13. Back-side readout semiconductor photomultiplier

    DOEpatents

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  14. The effects of group-I elements co-doping with Mn in ZnO dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Zhang, Liqiang; Zhang, Yinzhu; Ye, Zhizhen; Lu, Jianguo; Lu, Bin; He, Bo

    2012-06-01

    Mn-Li codoped ZnO (Zn(Mn,Li)O), Mn-Na codoped ZnO (Zn(Mn,Na)O), and Mn-K codoped ZnO (Zn(Mn,K)O) thin films were deposited on quartz substrates by pulsed laser deposition. The doping effects of group-I elements (e.g., Li, Na, and K) on the structural, magnetic, and optical properties of the Mn doped ZnO (ZnMnO) films were discussed. X-ray diffraction and K-edge x-ray absorption near-edge structure measurements revealed that all the films showed a hexagonal wurtzite ZnO structure, and no other clusters, precipitates, or second phases were detected. Zn(Mn,Na)O and Zn(Mn,Li)O films showed a weak p-type conductivity, while the Zn(Mn,K)O film appeared a highly resistivity. The saturation magnetization of Zn(Mn,Na)O and Zn(Mn,Li)O films was 1.2 and 0.18 μB/Mn, respectively. The hole-related defects, induced by doping with a low content of Li or Na, contributed to the room temperature ferromagnetism in the ZnMnO system.

  15. Influence of Fe doping on the structural, optical and magnetic properties of ZnS diluted magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Saikia, D.; Raland, RD.; Borah, J. P.

    2016-09-01

    Fe doped ZnS nanoparticles with different concentrations of Fe, synthesized by microwave assisted co-precipitation method have been reported. The incorporation of Fe2+ and Fe3+ ions into ZnS lattice are confirmed by X-ray diffraction (XRD) and Electron Paramagnetic resonance (EPR) study. XRD and High Resolution Transmission electron Microscope (HRTEM) results confirm the phase purity of the samples and indicate a reduction of the particle size with increase in Fe concentration. EDAX analysis confirms the presence of Zn, S and Fe in the samples. A yellow-orange emission peak is observed in Photoluminescence (PL) spectra which exhibits the Characteristic 4T2 (4G)-6A1 (6S) transition of Fe3+ ion. The room temperature magnetic studies as analyzed from M-H curves were investigated from vibrating samples magnetometer (VSM) which shows a weak ferro and superparamagnetic like behavior in 1% and 3% Fe-doped ZnS nanocrystals, whereas; at 10% Fe-doping concentrations, antiferromagnetism behavior is achieved. The ZFC-FC measurement reveals that the blocking temperature of the nanoparticle is above the room temperature.

  16. Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

    NASA Astrophysics Data System (ADS)

    Barseghyan, M. G.

    2016-11-01

    The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

  17. Enhanced photorefractive effect in liquid crystal structures co-doped with semiconductor quantum dots and metallic nanoparticles

    NASA Astrophysics Data System (ADS)

    Anczykowska, A.; Bartkiewicz, S.; Nyk, M.; Myśliwiec, J.

    2011-11-01

    In this paper, we present strong enhancement of optical properties of hybrid liquid crystal structures functionalized with metallic and semiconductor nanoparticles. Several experiments done in two wave mixing experimental set-up have reported that diffraction efficiency can be improved by up to 14 times by introducing nanoparticles of cadmium selenide or gold into the photoconducting polymer adjacent to the liquid crystal layer. Our research may open up a possible route for the development of faster and more efficient holographic materials which can be used in dynamic data processing systems.

  18. Small-angle x-ray scattering studies of microvoids in amorphous-silicon-based semiconductors. Final subcontract report, 1 February 1991--31 January 1994

    SciTech Connect

    Williamson, D.L.; Jone, S.J.; Chen, Y.

    1994-07-01

    This report describes work performed to provide new details of the microstructure for the size scale from about 1 nm to 30 nm in high-quality hydrogenated amorphous-silicon and related alloys prepared by current state-of-the-art deposition methods as well as by new and emerging deposition technologies. The purpose of this work is to help determine the role of microvoids and other density fluctuations in controlling the opto-electronic and photovoltaic properties. The approach involved collaboration with several groups that supplied relevant systematic sets of samples and the associated opto-electronic/photovoltaic data to help address particular issues. The small-angle X-ray scattering (SAXS) technique, as developed during this project, was able to provide microstructural information with a high degree of sensitivity not available from other methods. It is particularly sensitive to microvoids or H-rich microdomains and to the presence of oriented microstructures. The latter is readily associated with columnar-type growth and can even be observed in premature stages not detectable by transmission electron microscopy. Flotation density measurements provided important complementary data. Systematic correlations demonstrated that material with more SAXS-detected microstructure has to-electronic and photovoltaic properties and increased degradation under light soaking. New results related to alloy randomness emerged from our ability to measure the difffuse scattering component of the SAXS.

  19. Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2 Plasma Treatment on the SiNx Gate Insulator

    NASA Astrophysics Data System (ADS)

    Kim, Woong-Sun; Moon, Yeon-Keon; Lee, Sih; Kang, Byung-Woo; Kim, Kyung-Taek; Lee, Je-Hun; Kim, Joo-Han; Ahn, Byung-Du; Park, Jong-Wan

    2010-08-01

    In this study, we investigated the role of processing parameters on the electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) fabricated using DC magnetron sputtering at room temperature. Processing parameters including the oxygen partial pressure, annealing temperature, and channel thickness have a great influence on TFT performance and better devices are obtained at a low oxygen partial pressure, annealing at 200 °C, and a low channel thickness. We attempted to improve the a-IGZO TFT performance and stability under a gate bias stress using O2 plasma treatment. With an O2 plasma treated gate insulator, remarkable properties including excellent bias stability as well as a field effect mobility (µFE) of 11.5 cm2 V-1 s-1, a subthreshold swing (S) of 0.59 V/decade, a turn-on voltage (VON) of -1.3 V, and an on/off current ratio (ION/IOFF) of 105 were achieved.

  20. Direct tunneling through high-κ amorphous HfO{sub 2}: Effects of chemical modification

    SciTech Connect

    Wang, Yin Yu, Zhizhou; Zahid, Ferdows; Wang, Jian; Liu, Lei; Zhu, Yu; Guo, Hong

    2014-07-14

    We report first principles modeling of quantum tunneling through amorphous HfO{sub 2} dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO{sub 2}/Al. In particular, we predict that chemically modifying the amorphous HfO{sub 2} barrier by doping N and Al atoms in the middle region—far from the two interfaces of the MOS structure—can reduce the gate-to-channel tunnel leakage by more than one order of magnitude. Several other types of modification are found to enhance tunneling or induce substantial band bending in the Si, both are not desired from leakage point of view. By analyzing transmission coefficients and projected density of states, the microscopic physics of electron traversing the tunnel barrier with or without impurity atoms in the high-κ dielectric is revealed.

  1. Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

    SciTech Connect

    Aikawa, Shinya E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Nabatame, Toshihide

    2015-05-11

    We discuss the environmental instability of amorphous indium oxide (InO{sub x})-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InO{sub x} doped with low and high concentrations of oxygen binder (SiO{sub 2}) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO{sub 2} could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.

  2. Amorphous-diamond electron emitter

    DOEpatents

    Falabella, Steven

    2001-01-01

    An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

  3. Thin Film Transistor Gas Sensors Incorporating High-Mobility Diketopyrrolopyrole-Based Polymeric Semiconductor Doped with Graphene Oxide.

    PubMed

    Cheon, Kwang Hee; Cho, Jangwhan; Kim, Yun-Hi; Chung, Dae Sung

    2015-07-01

    In this work, we fabricated a diketopyrrolopyrole-based donor-acceptor copolymer composite film. This is a high-mobility semiconductor component with a functionalized-graphene-oxide (GO) gas-adsorbing dopant, used as an active layer in gas-sensing organic-field-effect transistor (OFET) devices. The GO content of the composite film was carefully controlled so that the crystalline orientation of the semiconducting polymer could be conserved, without compromising its gas-adsorbing ability. The resulting optimized device exhibited high mobility (>1 cm(2) V(-1) s(-1)) and revealed sensitive response during programmed exposure to various polar organic molecules (i.e., ethanol, acetone, and acetonitrile). This can be attributed to the high mobility of polymeric semiconductors, and also to their high surface-to-volume ratio of GO. The operating mechanism of the gas sensing GO-OFET is fully discussed in conjunction with charge-carrier trap theory. It was found that each transistor parameter (e.g., mobility, threshold voltage), responds independently to each gas molecule, which enables high selectivity of GO-OFETs for various gases. Furthermore, we also demonstrated practical GO-OFET devices that operated at low voltage (<1.5 V), and which successfully responded to gas exposure.

  4. Nanocrystalline semiconductor doped rare earth oxide for the photocatalytic degradation studies on Acid Blue 113: A di-azo compound under UV slurry photoreactor.

    PubMed

    Suganya Josephine, G A; Mary Nisha, U; Meenakshi, G; Sivasamy, A

    2015-11-01

    Preventive measures for the control of environmental pollution and its remediation has received much interest in recent years due to the world-wide increase in the contamination of water bodies. Contributions of these harmful effluents are caused by the leather processing, pharmaceutical, cosmetic, textile, agricultural and other chemical industries. Nowadays, advanced oxidation processes considered to be better option for the complete destruction of organic contaminants in water and wastewater. Acid Blue 113 is a most widely used di-azo compound in leather, textile, dying and food industry as a color rending compound. In the present study, we have reported the photo catalytic degradation of Acid Blue 113 using a nanocrystalline semiconductor doped rare earth oxide as a photo catalyst under UV light irradiation. The photocatalyst was prepared by a simple precipitation technique and were characterized by XRD, FT-IR, UV-DRS and FE-SEM analysis. The experimental results proved that the prepared photo catalyst was nanocrystalline and highly active in the UV region. The UV-DRS results showed the band gap energy was 3.15eV for the prepared photo catalyst. The photodegradation efficiency was analyzed by various experimental parameters such as pH, catalyst dosage, variation of substrate concentration and effect of electrolyte addition. The photo degradation process followed a pseudo first order kinetics and was continuously monitored by UV-visible spectrophotometer. The experimental results proved the efficacy of the nanocrystalline zinc oxide doped dysprosium oxide which are highly active under UV light irradiations. It is also suggested that the prepared material would find wider applications in environmental remediation technologies to remove the carcinogenic and toxic moieties present in the industrial effluents.

  5. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  6. New unorthodox semiconductor devices

    NASA Astrophysics Data System (ADS)

    Board, K.

    1985-12-01

    A range of new semiconductor devices, including a number of structures which rely entirely upon new phenomena, are discussed. Unipolar two-terminal devices, including impurity-controlled barriers and graded composition barriers, are considered, as are new transistor structures, including the hot-electron camel transistor, the planar-doped barrier transistor, the thermionic emission transistor, and the permeable base transistor. Regenerative switching devices are addressed, including the metal-tunnel insulator-semiconductor switch, the polysilicon switch, MIS, and MISIM switching structures, and the triangular-barrier switch. Heterostructure devices are covered, including the heterojunction bipolar transistor, the selectively doped heterojunction transistor, heterojunction lasers, and quantum-well structures.

  7. Optical properties and toxicity of undoped and Mn-doped ZnS semiconductor nanoparticles synthesized through the aqueous route

    NASA Astrophysics Data System (ADS)

    Labiadh, Houcine; Sellami, Badreddine; Khazri, Abdelhafidh; Saidani, Wiem; Khemais, Said

    2017-02-01

    Undoped and Mn-doped ZnS nanoparticles were synthesized at 95 °C in basic aqueous solution using the nucleation-doping strategy. Various samples of the Mn:ZnS NPs with 5, 10 and 20% of Mn dopant have been prepared and characterized using X-ray diffraction, energy-dispersive X-ray analysis, high resolution electron microscopy and photoluminescence (PL) measurements. When increasing the concentration of manganese Mn, the photoluminescence intensity gradually decreases. The PL spectra of the Mn-doped ZnS nanoparticles at room temperature exhibit both, the 450 nm blue defect-related emission and the 592 nm orange Mn2+ emission. It is vital to obtain NPs that meet the application requirements, however their environmental toxicity needs to be investigated. In this study, the induction of oxidative stress within the digestive gland of the Ruditapes decussatus organism (clam) is described. Antioxidant enzyme activities (superoxide dismutase (SOD) and catalase (CAT)) as well as malondialdehyde (MDA) levels have been determined in the digestive gland after exposure to 100 μg/L of ZnS, ZnS:Mn (5%), ZnS:Mn (10%) and ZnS:Mn (20%). The nanomaterials studied exhibit different responses in the digestive gland. Undoped Mn-ZnS has no effect on the markers considered, showing the limited interaction between this nanoparticle and the cells of the test organisms. In contrast, Mn-doped ZnS increases the activities of SOD and CAT and the level of MDA species, although this toxicity is highly dependent on the chemical properties of the material. These findings provide ideas for future considerations of ZnS nanoparticles, as well as information on the interaction between these materials and an aquatic environment. These data are the first evidence available of the formation of ZnS NPs using aqueous method and are an indication of the importance of knowing the biological target of the NPs when testing their potential impact on environmental model organisms.

  8. Research on defects and transport in amorphous-silicon-based semiconductors. Final subcontract report, 20 February 1991--19 April 1994

    SciTech Connect

    Schiff, E.A.; Antoniadis, H.; Gu, Q.; Lee, J.K.; Wang, Q.; Zafar, S.

    1994-09-01

    This report describes work on three individual tasks as follows. (1) Electron and hole drift measurements in a-Si{sub 1-x}Ge{sub x}:H and a-Si{sub 1-x}C{sub x}:H p-i-n solar cells. Multijunction solar cells incorporating modified band gap a-Si:H in a triple-junction structure are generally viewed as the most promising avenue for achieving an amorphous silicon-based solar call with 15% stabilized conversion efficiency. The specific objective of this task was to document the mobilities and deep-trapping mobility-lifetime products for electrons and holes in a-Si{sub 1-x}Ge{sub x}:H and a-Si{sub 1-x}C{sub x}:H alloys materials. (2) Electroabsorption measurements and built-in potential (V{sub bi}) in solar cells. V{sub bi} in a p-i-n solar call may be limiting the open-circuit voltage (V{sub oc}) in wide-band-gap cells (E{sub g} > 1.8 eV) currently under investigation as the top cell for 15% triple junction devices. The research addressed four issues that need to be resolved before the method can yield an error less than 0.1 V for V{sub bi}. The details are presented in this report. (3) Defect relaxation and Shockley-Read kinetics in a-Si:H. Quantitative modeling of solar cells is usually based on Shockley-Read kinetics.`` An important assumption of this approach is that the rate of emission of a photocarrier trapped on a defect is independent of quasi-Fermi level location.

  9. Heteroatom-doped hydrogenated amorphous carbons, a-C:H:X. "Volatile" silicon, sulphur and nitrogen depletion, blue photoluminescence, diffuse interstellar bands and ferro-magnetic carbon grain connections

    NASA Astrophysics Data System (ADS)

    Jones, A. P.

    2013-07-01

    Context. Hydrogenated amorphous carbons, a-C:H, can incorporate a variety of heteroatoms, which can lead to interesting effects. Aims: We investigate the doping of interstellar a-C:H grains with, principally, Si, O, N and S atoms within the astrophysical context. Methods: A search of the literature on doped a-C:H reveals a number of interesting phenomena of relevance to astrophysics. Results: X dopants in a-C:H:X materials can affect the sp3/sp2 ratio (X = Si, O and N), lead to blue photoluminescence (undoped or X = N), induce ferromagnetic-like behaviour (X = N and S) or simply be incorporated (depleted) into the structure (X = Si, O, N and S). Si and N atoms could also incorporate into fullerenes, possibly forming colour-centres that could mimic diffuse interstellar bands. Conclusions: Doped a-C:H grains could explain several dust-related conundrums, such as: "volatile" Si in photo-dissociation regions, S and N depletion in molecular clouds, blue luminescence, some diffuse interstellar bands and ferromagnetism in carbonaceous grains.

  10. Drift region doping effects on characteristics and reliability of high-voltage n-type metal-oxide-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Chen, Jone F.; Chang, Chun-Po; Liu, Yu Ming; Tsai, Yan-Lin; Hsu, Hao-Tang; Chen, Chih-Yuan; Hwang, Hann-Ping

    2016-01-01

    In this study, off-state breakdown voltage (VBD) and hot-carrier-induced degradation in high-voltage n-type metal-oxide-semiconductor transistors with various BF2 implantation doses in the n- drift region are investigated. Results show that a higher BF2 implantation dose results in a higher VBD but leads to a greater hot-carrier-induced device degradation. Experimental data and technology computer-aided design simulations suggest that the higher VBD is due to the suppression of gate-induced drain current. On the other hand, the greater hot-carrier-induced device degradation can be explained by a lower net donor concentration and a different current-flow path, which is closer to the Si-SiO2 interface.

  11. K and Mn co-doped BaCd{sub 2}As{sub 2}: A hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance

    SciTech Connect

    Yang, Xiaojun; Zhang, Pan; Jiang, Hao; Luo, Yongkang; Chen, Qian; Feng, Chunmu; Tao, Qian; Cao, Guanghan; Xu, Zhu-An; Li, Yuke; Cao, Chao; Dai, Jianhui

    2013-12-14

    A bulk diluted magnetic semiconductor was found in the K and Mn co-doped BaCd{sub 2}As{sub 2} system. Different from recently reported tetragonal ThCr{sub 2}Si{sub 2}-structured II-II-V based (Ba,K)(Zn,Mn){sub 2}As{sub 2}, the Ba{sub 1−y}K{sub y}Cd{sub 2−x}Mn{sub x}As{sub 2} system has a hexagonal CaAl{sub 2}Si{sub 2}-type structure with the Cd{sub 2}As{sub 2} layer forming a honeycomb-like network. The Mn concentration reaches up to x ∼ 0.4. Magnetization measurements show that the samples undergo ferromagnetic transitions with Curie temperature up to 16 K. With low coercive field of less than 10 Oe and large magnetoresistance of about −70%, the hexagonal structured Ba{sub 1−y}K{sub y}Cd{sub 2−x}Mn{sub x}As{sub 2} can be served as a promising candidate for spin manipulations.

  12. 980-nm all-fiber mode-locked Yb-doped phosphate fiber oscillator based on semiconductor saturable absorber mirror and its amplifier

    NASA Astrophysics Data System (ADS)

    Li, Ping-Xue; Yao, Yi-Fei; Chi, Jun-Jie; Hu, Hao-Wei; Zhang, Guang-Ju; Liang, Bo-Xing; Zhang, Meng-Meng; Ma, Chun-Mei; Su, Ning

    2016-08-01

    A 980-nm semiconductor saturable absorber mirror (SESAM) mode-locked Yb-doped phosphate fiber laser is demonstrated by using an all-fiber linear cavity configuration. Two different kinds of cavity lengths are introduced into the oscillator to obtain a robust and stable mode-locked seed source. When the cavity length is chosen to be 6 m, the oscillator generates an average output power of 3.5 mW and a pulse width of 76.27 ps with a repetition rate of 17.08 MHz. As the cavity length is optimized to short, 4.4-mW maximum output power and 61.15-ps pulse width are produced at a repetition rate of 20.96 MHz. The output spectrum is centered at 980 nm with a narrow spectral bandwidth of 0.13 nm. In the experiment, no undesired amplified spontaneous emission (ASE) nor harmful oscillation around 1030 nm is observed. Moreover, through a two-stage all-fiber-integrated amplifier, an output power of 740 mW is generated with a pulse width of 200 ps. Project supported by the National Natural Science Foundation of China (Grant No. 61205047).

  13. Preparation and optical spectroscopy of Eu{sup 3+}-doped GaN luminescent semiconductor from freeze-dried precursors

    SciTech Connect

    El-Himri, Abdelouahad; Perez-Coll, Domingo; Nun-tilde ez, Pedro . E-mail: pnunez@ull.es; Martin, Inocencio R.; Lavin, Victor; Rodriguez, Vicente D.

    2004-11-01

    Pure and 0.5% and 5mol% Eu{sup 3+} doped GaN nanoparticles have been prepared by ammonolysis of the corresponding freeze-dried precursors. A single hexagonal phase with the wurtzite structure was obtained as determined by X-ray Powder Diffraction. The crystallite size determined by XRD was lower than 10nm. From optical spectroscopy characterization, it is found that the Eu{sub 2}O{sub 3} formation is avoided by using nitrates as starting reagent. Fluorescence line narrowing spectra show excitation wavelength dependence, which is indicative that the Eu{sup 3+} ions are well dispersed in the prepared samples. The environment distribution occupied by the Eu{sup 3+} ions has been analyzed by crystal-field calculation and the results are compared with those for other materials.

  14. Enhancement in the photocatalytic nature of nitrogen-doped PVD-grown titanium dioxide thin films

    NASA Astrophysics Data System (ADS)

    Tavares, C. J.; Marques, S. M.; Viseu, T.; Teixeira, V.; Carneiro, J. O.; Alves, E.; Barradas, N. P.; Munnik, F.; Girardeau, T.; Rivière, J.-P.

    2009-12-01

    Nitrogen-doped titanium dioxide semiconductor photocatalytic thin films have been deposited by unbalanced reactive magnetron physical vapor deposition on glass substrates for self-cleaning applications. In order to increase the photocatalytic efficiency of the titania coatings, it is important to enhance the catalysts absorption of light from the solar spectra. Bearing this fact in mind, a reduction in the titania semiconductor band-gap has been attempted by using nitrogen doping from a coreactive gas mixture of N2:O2 during the titanium sputtering process. Rutherford backscattering spectroscopy was used in order to assess the composition of the titania thin films, whereas heavy-ion elastic recoil detection analysis granted the evaluation of the doping level of nitrogen. X-ray photoelectron spectroscopy provided valuable information about the cation-anion binding within the semiconductor lattice. The as-deposited thin films were mostly amorphous, however, after a thermal annealing in vacuum at 500 °C the crystalline polymorph anatase and rutile phases have been developed, yielding an enhancement in the crystallinity. Spectroscopic ellipsometry experiments enabled the determination the refractive index of the thin films as a function of the wavelength, while from the optical transmittance it was possible to estimate the semiconductor indirect band-gap of these coatings, which has been proven to decrease as the N-doping increases. The photocatalytic performance of the titania films has been characterized by the degradation rate of an organic reactive dye under UV/visible irradiation. It has been found that for a certain critical limit of 1.19 at. % of nitrogen doping in the titania anatase crystalline lattice enhances the photocatalytic behavior of the thin films and it is in accordance with the observed semiconductor band-gap narrowing to 3.18 eV. By doping the titania lattice with nitrogen, the photocatalytic activity is enhanced under both UV and visible light.

  15. Enhancement in the photocatalytic nature of nitrogen-doped PVD-grown titanium dioxide thin films

    SciTech Connect

    Tavares, C. J.; Marques, S. M.; Viseu, T.; Teixeira, V.; Carneiro, J. O.; Alves, E.; Barradas, N. P.; Munnik, F.; Girardeau, T.; Riviere, J.-P.

    2009-12-01

    Nitrogen-doped titanium dioxide semiconductor photocatalytic thin films have been deposited by unbalanced reactive magnetron physical vapor deposition on glass substrates for self-cleaning applications. In order to increase the photocatalytic efficiency of the titania coatings, it is important to enhance the catalysts absorption of light from the solar spectra. Bearing this fact in mind, a reduction in the titania semiconductor band-gap has been attempted by using nitrogen doping from a coreactive gas mixture of N{sub 2}:O{sub 2} during the titanium sputtering process. Rutherford backscattering spectroscopy was used in order to assess the composition of the titania thin films, whereas heavy-ion elastic recoil detection analysis granted the evaluation of the doping level of nitrogen. X-ray photoelectron spectroscopy provided valuable information about the cation-anion binding within the semiconductor lattice. The as-deposited thin films were mostly amorphous, however, after a thermal annealing in vacuum at 500 deg. C the crystalline polymorph anatase and rutile phases have been developed, yielding an enhancement in the crystallinity. Spectroscopic ellipsometry experiments enabled the determination the refractive index of the thin films as a function of the wavelength, while from the optical transmittance it was possible to estimate the semiconductor indirect band-gap of these coatings, which has been proven to decrease as the N-doping increases. The photocatalytic performance of the titania films has been characterized by the degradation rate of an organic reactive dye under UV/visible irradiation. It has been found that for a certain critical limit of 1.19 at. % of nitrogen doping in the titania anatase crystalline lattice enhances the photocatalytic behavior of the thin films and it is in accordance with the observed semiconductor band-gap narrowing to 3.18 eV. By doping the titania lattice with nitrogen, the photocatalytic activity is enhanced under both UV and

  16. Combinatorial Discovery and Optimization of the Composition, Doping and Morphology of New Oxide Semiconductors for Efficient Photoelectrochemical Water Splitting

    SciTech Connect

    Parkinson, Bruce A.; Jianghua, He

    2015-01-06

    The increasing need for carbon free energy has focused renewed attention on solar energy conversion. Although photovoltaic cells excel at directly converting of solar energy to electricity, they do not directly produce stored energy or fuels that account for more than 75% of current energy use. Direct photoelectrolysis of water has the advantage of converting solar energy directly to hydrogen, an ideal non-carbon and nonpolluting energy carrier, by replacing both a photovoltaic array and an electrolysis unit with one potentially inexpensive device. Unfortunately no materials are currently known to efficiently photoelectrolyze water that are, efficient, inexpensive and stable under illumination in electrolytes for many years. Nanostructured semiconducting metal oxides could potentially fulfill these requirements, making them the most promising materials for solar water photoelectrolysis, however no oxide semiconductor has yet been discovered with all the required properties. We have developed a simple, high-throughput combinatorial approach to prepare and screen many multi component metal oxides for water photoelectrolysis activity. The approach uses ink jet printing of overlapping patterns of soluble metal oxide precursors onto conductive glass substrates. Subsequent pyrolysis produces metal oxide phases that are screened for photoelectrolysis activity by measuring photocurrents produced by scanning a laser over the printed patterns in aqueous electrolytes. Several promising and unexpected compositions have been identified.

  17. The nonlinear and saturable absorption characteristics of Ga0.90In0.10Se and Ga0.85In0.15Se semiconductor crystals and their amorphous thin films

    NASA Astrophysics Data System (ADS)

    Karatay, Ahmet; Aksoy, Çagla; Gul Yaglioglu, H.; Elmali, Ayhan; Kürüm, Ulaş; Ateş, Aytunç; Gasanly, Nizami

    2011-07-01

    We investigated the nonlinear and saturable absorption characteristics of Ga0.90In0.10Se and Ga0.85In0.15Se semiconductor crystals and their very thin amorphous films by open aperture (OA) Z-scan and pump-probe techniques. The linear absorption spectra indicated a blue shift in energy with increasing film thickness. This can be attributed to the quantum confinement effect. For both 4 ns and 65 ps pulse durations the two photon absorption coefficients of Ga0.90In0.10Se and Ga0.85In0.15Se crystals increased with increasing input intensities. The life time of the localized defect states was measured as 3 ns for both Ga0.90In0.10Se and Ga0.85In0.15Se films while it was around 10 ns for GaSe and InSe films. Open aperture Z-scan experiments with a 4 ns pulse duration did not exhibit any saturable absorption behavior for thin films since the life time of localized defect states was not long enough to saturate these films. Thinner films exhibited saturable absorption and thicker films exhibited nonlinear absorption for a 65 ps pulse duration. This behavior was attributed to increasing localized defect states with increasing film thickness. The experimental curves were fitted to the theory of the open aperture Gaussian-beam Z-scan based on the Adomian decomposition method incorporating one photon, two photon, and free carrier absorptions and their saturations. The lowest saturation intensity threshold for the Ga0.90In0.10Se film was found to be 1.38 × 102 MW cm - 2 for 43 nm film thickness.

  18. Dose reduction in skeletal and chest radiography using a large-area flat-panel detector based on amorphous silicon and thallium-doped cesium iodide: technical background, basic image quality parameters, and review of the literature.

    PubMed

    Völk, Markus; Hamer, Okka W; Feuerbach, Stefan; Strotzer, Michael

    2004-05-01

    The two most frequently performed diagnostic X-ray examinations are those of the extremities and of the chest. Thus, dose reduction in the field of conventional skeletal and chest radiography is an important issue and there is a need to reduce man-made ionizing radiation. The large-area flat-panel detector based on amorphous silicon and thallium-doped cesium iodide provides a significant reduction of radiation dose in skeletal and chest radiography compared with traditional imaging systems. This article describes the technical background and basic image quality parameters of this 43 x 43-cm digital system, and summarizes the available literature (years 2000-2003) concerning dose reduction in experimental and clinical studies. Due to its high detective quantum efficiency and dynamic range compared with traditional screen-film systems, a dose reduction of up to 50% is possible without loss of image quality.

  19. Photoeffects of semiconductor electrolyte interfaces

    NASA Astrophysics Data System (ADS)

    Phillips, T. E.; Moorjani, K.; Murphy, J. C.; Poehler, T. O.

    1985-03-01

    Materials based on modified transition metal oxide semiconductors for the photoelectrochemical decomposition of H2O were investigated. Single crystals of TiO2 doped with VO2 were made and it was demonstrated that the bandgap was decreased from 3.03 eV to 1.99 eV. The flatband potential was increased from -1.0 V to 0.25 V. Both effects are attributed to the existence of an empty vanadium d-band located in the TiO2 bandgap. Another approach was taken with FeTiO3-Fe2O3 alloys in the form of amorphous thin films and single crystals, where it was anticipated that the charge-transfer interactions observed in such alloys could be exploited in the materials' photoelectrochemical properties. The effect of FeTiO3 had very little effect on the overall properties of FE2O3 single crystals. On the other hand the effect on the Fe/Ti oxide thin films was quite dramatic. Optical absorption, photoconductivity and photoelectrolytic spectral measurement demonstrate a photometric enhancement at energies above the bandgap for Ti concentrations in the range of 5% to 8%. There is some suggestion that the bandgap has been reduced in this concentration regime. Higher concentrations of Ti result in a change from n-type to p-type. Efficiency and stability of thermally oxidized Fe/Ti oxide films are comparable to single crystal results.

  20. Insights on semiconductor-metal transition in indium-doped zinc oxide from x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry and x-ray diffraction

    NASA Astrophysics Data System (ADS)

    Saw, K. G.; Aznan, N. M.; Yam, F. K.; Ng, S. S.; Pung, S. Y.

    2016-07-01

    ZnO thin films doped with various amounts of In impurities were prepared by magnetron sputtering at a substrate temperature of 150°C. The shift in optical bandgap of the In-doped ZnO films is studied as a function of carrier concentration. Nominally doped ZnO films exhibit an increase in the measured optical band gap known as the Burstein-Moss effect. Dominant band gap narrowing is observed with increased doping. XPS and TOFSIMS analyses confirm that In is incorporated in the ZnO material. The In 3d peaks show that no metallic In is present as a result of heavy doping. The XRD phase analysis shows a preferential c-axis growth but a shift of the ZnO (002) peak to lower 2-theta values with increasing FWHM as the carrier concentration increases indicates the decline in the quality of crystallinity. An elongation of the c lattice constant is also observed and is likely to be caused by intersitital In as the amount of In dopants increases. The incorporation of In induces a semiconductor-metal transition between the carrier concentrations of 3.58 - 5.61×1019 cm-3 and structural changes in the ZnO host material.

  1. Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (B a1 -xKx ) (Zn1-yM ny ) 2A s2

    NASA Astrophysics Data System (ADS)

    Sun, F.; Zhao, G. Q.; Escanhoela, C. A.; Chen, B. J.; Kou, R. H.; Wang, Y. G.; Xiao, Y. M.; Chow, P.; Mao, H. K.; Haskel, D.; Yang, W. G.; Jin, C. Q.

    2017-03-01

    We investigate doping- and pressure-induced changes in the electronic state of Mn 3 d and As 4 p orbitals in II-II-V-based diluted magnetic semiconductor (B a1 -xKx ) (Zn1-yM ny ) 2A s2 to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T c =230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption, and dichroism) show that the emergence and further enhancement of ferromagnetic interactions with increased hole doping into the As 4 p band is accompanied by a decrease in local 3 d spin density at Mn sites. This is a result of increasing Mn 3 d -As 4 p hybridization with hole doping, which enhances indirect exchange interactions between Mn dopants and gives rise to induced magnetic polarization in As 4 p states. On the contrary, application of pressure suppresses exchange interactions. While Mn K β emission spectra show a weak response of 3 d states to pressure, clear As 4 p band broadening (hole delocalization) is observed under pressure, ultimately leading to loss of ferromagnetism concomitant with a semiconductor to metal transition. The pressure response of As 4 p and Mn 3 d states is intimately connected with the evolution of the As-As interlayer distance and the geometry of the MnA s4 tetrahedral units, which we probed with x-ray diffraction. Our results indicate that hole doping increases the degree of covalency between the anion (As) p states and cation (Mn) d states in the MnA s4 tetrahedron, a crucial ingredient to promote indirect exchange interactions between Mn dopants and high T c ferromagnetism. The instability of ferromagnetism and semiconducting states against pressure is mainly dictated by delocalization of anion p states.

  2. A review of thermal processing in the subsecond range: semiconductors and beyond

    NASA Astrophysics Data System (ADS)

    Rebohle, Lars; Prucnal, Slawomir; Skorupa, Wolfgang

    2016-10-01

    Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to the treatment of polymers and flexible substrates. It still continues to extend its use to other material classes and applications, and is becoming of interest for an increasing number of users. In this review we present a short, but comprehensive and consistent picture of the current state-of-the-art of FLA, sometimes also called pulsed light sintering. In the first part we take a closer look at the physical and technological background, namely the electrical and optical specifications of flash lamps, the resulting temperature profiles, and the corresponding implications for process-relevant parameters such as reproducibility and homogeneity. The second part briefly considers the various applications of FLA, starting with the classical task of defect minimization and ultra-shallow junction formation in Si, followed by further applications in Si technology, namely in the fields of hyperdoping, crystallization of thin amorphous films, and photovoltaics. Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, doping of III-V semiconductors, diluted magnetic semiconductors, III-V nanocluster synthesis in Si, annealing of transparent conductive oxides and high-k materials, nanoclusters in dielectric matrices, and the use of FLA for flexible substrates.

  3. Semiconductor P-I-N detector

    DOEpatents

    Sudharsanan, Rengarajan; Karam, Nasser H.

    2001-01-01

    A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

  4. Nitrogen doped nanocrystalline semiconductor metal oxide: An efficient UV active photocatalyst for the oxidation of an organic dye using slurry Photoreactor.

    PubMed

    Ramachandran, Saranya; Sivasamy, A; Kumar, B Dinesh

    2016-12-01

    Water pollution is a cause for serious concern in today's world. A major contributor to water pollution is industrial effluents containing dyes and other organic molecules. Waste water treatment has become a priority area in today's applied scientific research as it seeks to minimize the toxicity of the effluents being discharged and increase the possibility of water recycling. An efficient and eco-friendly way of degrading toxic molecules is to use nano metal-oxide photocatalysts. The present study aims at enhancing the photocatalytic activity of a semiconductor metal oxide by doping it with nitrogen. A sol-gel cum combustion method was employed to synthesize the catalyst. The prepared catalyst was characterized by FT-IR, XRD, UV-DRS, FESEM and AFM techniques. UV-DRS result showed the catalyst to possess band gap energy of 2.97eV, thus making it active in the UV region of the spectrum. Its photocatalytic activity was evaluated by the degradation of a model pollutant-Orange G dye, under UV light irradiation. Preliminary experiments were carried out to study the effects of pH, catalyst dosage and initial dye concentration on the extent of dye degradation. Kinetic studies revealed that the reaction followed pseudo first order kinetics. The effect of electrolytes on catalyst efficiency was also studied. The progress of the reaction was monitored by absorption studies and measuring the reduction in COD. The catalyst thus prepared was seen to have a high photocatalytic efficiency. The use of this catalyst is a promising means of waste water treatment.

  5. Germanium detector passivated with hydrogenated amorphous germanium

    DOEpatents

    Hansen, William L.; Haller, Eugene E.

    1986-01-01

    Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

  6. Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

    SciTech Connect

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-02-20

    SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  7. Synthesis and characterisation of composite based biohydroxyapatite bovine bone mandible waste (BHAp) doped with 10 wt % amorphous SiO2 from rice husk by solid state reaction

    NASA Astrophysics Data System (ADS)

    Asmi, Dwi; Sulaiman, Ahmad; Oktavia, Irene Lucky; Badaruddin, Muhammad; Zulfia, Anne

    2016-04-01

    Effect of 10 wt% amorphous SiO2 from rice husk addition on the microstructures of biohydroxyapatite (BHAp) obtained from bovine bone was synthesized by solid state reaction. In this study, biohydroxyapatite powder was obtained from bovine bone mandible waste heat treated at 800 °C for 5 h and amorphous SiO2 powder was extracted from citric acid leaching of rice husk followed by combustion at 700°C for 5 h. The composite powder then mixed and sintered at 1200 °C for 3 h. X-ray diffraction (XRD), Fourier transformed infrared (FTIR) spectroscopy and Scanning electron microscopy (SEM) techniques are utilized to characterize the phase relations, functional group present and morphology of the sample. The study has revealed that the processing procedures played an important role in microstructural development of BHAp-10 wt% SiO2 composite. The XRD study of the raw material revealed that the primary phase material in the heat treated of bovine bone mandible waste is hydroxyapatite and in the combustion of rice husk is amorphous SiO2. However, in the composite the hydroxyapatite, β-tricalcium phosphate, and calcium phosphate silicate were observed. The FTIR result show that the hydroxyl stretching band in the composite decrease compared with those of hydroxyapatite spectra and the evolution of morphology was occurred in the composite.

  8. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  9. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  10. A single-source solid-precursor method for making eco-friendly doped semiconductor nanoparticles emitting multi-color luminescence.

    PubMed

    Manzoor, K; Aditya, V; Vadera, S R; Kumar, N; Kutty, T R N

    2007-02-01

    A novel synthesis method is presented for the preparation of eco-friendly, doped semiconductor nanocrystals encapsulated within oxide-shells, both formed sequentially from a single-source solid-precursor. Highly luminescent ZnS nanoparticles, in situ doped with Cu(+)-Al3+ pairs and encapsulated with ZnO shells are prepared by the thermal decomposition of a solid-precursor compound, zinc sulfato-thiourea-oxyhydroxide, showing layered crystal structure. The precursor compound is prepared by an aqueous wet-chemical reaction involving necessary chemical reagents required for the precipitation, doping and inorganic surface capping of the nanoparticles. The elemental analysis (C, H, N, S, O, Zn), quantitative estimation of different chemical groups (SO4(2-) and NH4(-)) and infrared studies suggested that the precursor compound is formed by the intercalation of thiourea, and/or its derivatives thiocarbamate (CSNH2(-)), dithiocarbamate (CS2NH2(-)), etc., and ammonia into the gallery space of zinc-sulfato-oxyhydroxide corbel where the Zn(II) ions are both in the octahedral as well as tetrahedral coordination in the ratio 3 : 2 and the dopant ions are incorporated within octahedral voids. The powder X-ray diffraction of precursor compound shows high intensity basal reflection corresponding to the large lattice-plane spacing of d = 11.23 angstroms and the Rietveld analysis suggested orthorhombic structure with a = 9.71 angstroms, b = 12.48 angstroms, c = 26.43 angstroms, and beta = 90 degrees. Transmission electron microscopy studies show the presence of micrometer sized acicular monocrystallites with prismatic platy morphology. Controlled thermolysis of the solid-precursor at 70-110 degrees C leads to the collapse of layered structure due to the hydrolysis of interlayer thiourea molecules or its derivatives and the S2- ions liberated thereby reacts with the tetrahedral Zn(II) atoms leading to the precipitation of ZnS nanoparticles at the gallery space. During this process

  11. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  12. Switchable dual-wavelength single-longitudinal-mode erbium-doped fiber laser using an inverse-Gaussian apodized fiber Bragg grating filter and a low-gain semiconductor optical amplifier.

    PubMed

    Lin, Bo; Tjin, Swee Chuan; Zhang, Han; Tang, Dingyuan; Hao, Jianzhong; Dong, Bo; Liang, Sheng

    2010-12-20

    We present a stable and switchable dual-wavelength erbium-doped fiber laser. In the ring cavity, an inverse-Gaussian apodized fiber Bragg grating serves as an ultranarrow dual-wavelength passband filter, a semiconductor optical amplifier biased in the low-gain regime reduces the gain competition of the two wavelengths, and a feedback fiber loop acts as a mode filter to guarantee a stable single-longitudinal-mode operation. Two lasing lines with a wavelength separation of approximately 0.1 nm are obtained experimentally. A microwave signal at 12.51 GHz is demonstrated by beating the dual wavelengths at a photodetector.

  13. Doping-Induced Absorption Bands in P3HT: Polarons and Bipolarons.

    PubMed

    Enengl, Christina; Enengl, Sandra; Pluczyk, Sandra; Havlicek, Marek; Lapkowski, Mieczyslaw; Neugebauer, Helmut; Ehrenfreund, Eitan

    2016-12-05

    In this work, we focus on the formation of different kinds of charge carriers such as polarons and bipolarons upon p-type doping (oxidation) of the organic semiconductor poly(3- hexylthiophene-2,5-diyl) (P3HT). We elucidate the cyclic voltammogram during oxidation of this polymer and present spectroscopic changes upon doping in the UV/Vis/near-IR range as well as in the mid-IR range. In the low-oxidation regime, two absorption bands related to sub-gap transitions appear, one in the UV/Vis range and another one in the mid-IR range. The UV/Vis absorption gradually decreases upon further doping while the mid-IR absorption shifts to lower energy. Additionally, electron paramagnetic resonance (EPR) measurements are performed, showing an increase of the EPR signal up to a certain doping level, which significantly decreases upon further doping. Furthermore, the absorption spectra in the UV/Vis range are analyzed in relation to the morphology (crystalline vs. amorphous) by using theoretical models. Finally, the calculated charge carriers from cyclic voltammogram are linked together with optical transitions as well as with the EPR signals upon p-type doping. We stress that our results indicate the formation of polarons at low doping levels and the existence of bipolarons at high doping levels. The presented spectroscopic data are an experimental evidence of the formation of bipolarons in P3HT.

  14. Refractive-index change caused by electrons in amorphous AsS and AsSe thin films doped with different metals by photodiffusion

    SciTech Connect

    Nordman, Olli; Nordman, Nina; Pashkevich, Valfrid

    2001-08-01

    The refractive-index change caused by electrons was measured in amorphous AsS and AsSe thin films. Films were coated with different metals. Diffraction gratings were written by electron-beam lithography. The interactions of electrons in films with and without the photodiffusion of overcoated metal were compared. Incoming electrons caused metal atom and ion diffusion in both investigated cases. The metal diffusion was dependent on the metal and it was found to influence the refractive index. In some cases lateral diffusion of the metal was noticed. The conditions for applications were verified. {copyright} 2001 Optical Society of America

  15. Photo-induced refractive index change of amorphous tin-doped As{sub 2}S{sub 8} films and its application to strip waveguide fabrication

    SciTech Connect

    Sun, B.; Chen, B. X.; Sui, G. R.; Wang, G. D.; Zou, L. E.; Iso, M.; Hamanaka, H.

    2009-05-01

    The amorphous chalcogenide glass Sn{sub 1}As{sub 20}S{sub 79} is demonstrated to undergo permanent changes in refractive index on irradiation with ultraviolet light. The refractive properties of this material and the effect of annealing at temperatures below the glass transition temperature are investigated in detail. An Sn{sub 1}As{sub 20}S{sub 79} strip waveguide is fabricated using this photoinduced refractive index change, and the device is shown to function as expected with good propagation characteristics for the 632.8 nm guided mode.

  16. Tandem junction amorphous semiconductor photovoltaic cell

    DOEpatents

    Dalal, Vikram L.

    1983-01-01

    A photovoltaic stack comprising at least two p.sup.+ i n.sup.+ cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p.sup.+ i n.sup.+ cells.

  17. Tandem junction amorphous semiconductor photovoltaic cell

    DOEpatents

    Dalal, V.L.

    1983-06-07

    A photovoltaic stack comprising at least two p[sup +]i n[sup +] cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p[sup +]i n[sup +] cells. 3 figs.

  18. Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE

    NASA Astrophysics Data System (ADS)

    Asahi, H.; Iwata, K.; Tampo, H.; Kuroiwa, R.; Hiroki, M.; Asami, K.; Nakamura, S.; Gonda, S.

    1999-05-01

    Polycrystalline GaN layers showing very strong photoluminescence (PL) intensities are successfully grown on amorphous fused silica (SiO 2) substrates by gas source molecular beam epitaxy (MBE) using an ion removed electron cyclotron resonance radical cell. The PL intensity is larger than that of undoped single crystalline GaN grown on sapphire by gas source MBE and is comparable to that of Si-doped single crystalline GaN grown on sapphire by metalorganic vapor-phase epitaxy at Nichia Chemical. The PL peak emission is considered to be excitonic. Undoped GaN layers grown on silica substrates exhibit n-type conduction and both n- and p-type conductions are achieved by impurity doping. These results open up the area of "Polycrystalline Semiconductor Photonics".

  19. Amorphic complexity

    NASA Astrophysics Data System (ADS)

    Fuhrmann, G.; Gröger, M.; Jäger, T.

    2016-02-01

    We introduce amorphic complexity as a new topological invariant that measures the complexity of dynamical systems in the regime of zero entropy. Its main purpose is to detect the very onset of disorder in the asymptotic behaviour. For instance, it gives positive value to Denjoy examples on the circle and Sturmian subshifts, while being zero for all isometries and Morse-Smale systems. After discussing basic properties and examples, we show that amorphic complexity and the underlying asymptotic separation numbers can be used to distinguish almost automorphic minimal systems from equicontinuous ones. For symbolic systems, amorphic complexity equals the box dimension of the associated Besicovitch space. In this context, we concentrate on regular Toeplitz flows and give a detailed description of the relation to the scaling behaviour of the densities of the p-skeletons. Finally, we take a look at strange non-chaotic attractors appearing in so-called pinched skew product systems. Continuous-time systems, more general group actions and the application to cut and project quasicrystals will be treated in subsequent work.

  20. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

    NASA Astrophysics Data System (ADS)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-06-01

    Lanthanum-doped high quality TlInS2 (TlInS2:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS2:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS2:La. Thermal treatments of TlInS2:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10-14 cm2, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS2:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10-16 cm2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5 deep level defects, are aligned in the

  1. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    SciTech Connect

    Seyidov, MirHasan Yu. Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  2. Processing of insulators and semiconductors

    DOEpatents

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  3. Compensated amorphous-silicon solar cell

    DOEpatents

    Devaud, G.

    1982-06-21

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  4. Microwave semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sitch, J. E.

    1985-03-01

    The state of the art of microwave semiconductor design is reviewed, with emphasis on developments of the past 10-12 years. Consideration is given to: varistor diodes; varactor diodes; and transit time negative diodes. The design principles of bipolar and unipolar transistors are discussed, with reference to power FETs, traveling-wave FETs, and camel or planar-doped barrier transistors. Recent innovations in the field of fabrication technology are also considered, including: crystal growth; doping; and packaging. Several schematic drawings and photographs of the different devices are provided.

  5. PdO doping tunes band-gap energy levels as well as oxidative stress responses to a Co₃O₄ p-type semiconductor in cells and the lung.

    PubMed

    Zhang, Haiyuan; Pokhrel, Suman; Ji, Zhaoxia; Meng, Huan; Wang, Xiang; Lin, Sijie; Chang, Chong Hyun; Li, Linjiang; Li, Ruibin; Sun, Bingbing; Wang, Meiying; Liao, Yu-Pei; Liu, Rong; Xia, Tian; Mädler, Lutz; Nel, André E

    2014-04-30

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0-8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the E(c) levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from -4.12 to -4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of E(v), E(c), and E(f) levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4.

  6. PdO Doping Tunes Band-Gap Energy Levels as Well as Oxidative Stress Responses to a Co3O4p-Type Semiconductor in Cells and the Lung

    PubMed Central

    2014-01-01

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0–8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the Ec levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from −4.12 to −4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of Ev, Ec, and Ef levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4. PMID:24673286

  7. Measure of disorder in tetrahedrally bonded semiconductors

    SciTech Connect

    Sundari, S. Tripura; Raghavan, G.

    2005-06-13

    A measure of crystalline order in tetrahedrally bonded semiconductors is proposed based on optical response. This measure is obtained from the <111> critical point structure in the dielectric spectra. This descriptor is sensitive to the nature and extent of disorder in specimens and distinguishes differences in medium and short-order present in amorphous materials. Application to Ar{sup +}-irradiated Si specimens yields the threshold amorphization dose and this technique is sensitive to structural changes which occur as a function of irradiation fluence both above and beyond the amorphization threshhold. Systematic variations are also obtained in hydrogenated amorphous-Si. The general validity of the method is indicated.

  8. Method of doping organic semiconductors

    DOEpatents

    Kloc,; Christian Leo; Ramirez; Arthur Penn; So, Woo-Young

    2010-10-26

    An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.

  9. Epsilon-near-zero strong coupling in metamaterial-semiconductor hybrid structures.

    PubMed

    Jun, Young Chul; Reno, John; Ribaudo, Troy; Shaner, Eric; Greffet, Jean-Jacques; Vassant, Simon; Marquier, Francois; Sinclair, Mike; Brener, Igal

    2013-01-01

    We present a new type of electrically tunable strong coupling between planar metamaterials and epsilon-near-zero modes that exist in a doped semiconductor nanolayer. The use of doped semiconductors makes this strong coupling tunable over a wide range of wavelengths through the use of different doping densities. We also modulate this coupling by depleting the doped semiconductor layer electrically. Our hybrid approach incorporates strong optical interactions into a highly tunable, integrated device platform.

  10. Na-Diffusion Enhanced p-type Conductivity in Cu(In,Ga)Se 2 : A New Mechanism for Efficient Doping in Semiconductors

    SciTech Connect

    Yuan, Zhen-Kun; Chen, Shiyou; Xie, Yun; Park, Ji-Sang; Xiang, Hongjun; Gong, Xin-Gao; Wei, Su-Huai

    2016-08-30

    A new mechanism responsible for the hole concentration increase in the CIGS thin films after Na doping is proposed. At high temperature, a high concentration of Na is doped into the grains. After cooling and water rinsing, the solubility of Na becomes lower, so Na diffuses out of the grains with high concentration of Cu vacancies and hole carriers formed.

  11. Nonlinear Peltier effect in semiconductors

    NASA Astrophysics Data System (ADS)

    Zebarjadi, Mona; Esfarjani, Keivan; Shakouri, Ali

    2007-09-01

    Nonlinear Peltier coefficient of a doped InGaAs semiconductor is calculated numerically using the Monte Carlo technique. The Peltier coefficient is also obtained analytically for single parabolic band semiconductors assuming a shifted Fermi-Dirac electronic distribution under an applied bias. Analytical results are in agreement with numerical simulations. Key material parameters affecting the nonlinear behavior are doping concentration, effective mass, and electron-phonon coupling. Current density thresholds at which nonlinear behavior is observable are extracted from numerical data. It is shown that the nonlinear Peltier effect can be used to enhance cooling of thin film microrefrigerator devices especially at low temperatures.

  12. Properties of doped semiconducting materials

    NASA Astrophysics Data System (ADS)

    Zemskov, V. S.

    The papers contained in this volume focus on the physicochemical principles of the doping of semiconductor materials. Topics discussed include impurity atoms and atomic levels, phase diagrams of the semiconductor-dopant system, distribution coefficients, dopant diffusion, and macro- and microsegregation of doping components. Attention is also given to the interaction between dopant atoms and lattice defects and the structure and decomposition of semiconductor-dopant solid solutions. Experimental data are presented for single crystals and epitaxial films of III-V, IV-VI, and II-VI semiconductors.

  13. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    NASA Astrophysics Data System (ADS)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  14. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

    NASA Astrophysics Data System (ADS)

    Hanyu, Yuichiro; Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kumomi, Hideya; Hosono, Hideo; Kamiya, Toshio

    2013-11-01

    We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H2O indicate that this threshold annealing temperature corresponds to depletion of H2O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300-430 °C. A plausible structural model is suggested.

  15. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  16. Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

    NASA Astrophysics Data System (ADS)

    O'Connor, É.; Cherkaoui, K.; Monaghan, S.; Sheehan, B.; Povey, I. M.; Hurley, P. K.

    2017-01-01

    In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, τg, extracted from experimentally measured transition frequencies, ωm, using physics based a.c. simulations, demonstrated a reduction in τg with increasing epitaxial doping concentration. The frequency scaled conductance, G/ω, in strong inversion allowed the estimation of accurate Cox values for these MOS devices.

  17. Wavelength-tunable actively mode-locked erbium-doped fiber ring laser using a distributed feedback semiconductor laser as mode locker and tunable filter

    NASA Astrophysics Data System (ADS)

    Li, Shenping; Chan, K. T.

    1999-07-01

    A wavelength-tunable actively mode-locked erbium fiber ring laser was demonstrated using a distributed feedback semiconductor laser as an intensity mode locker and a tunable optical filter. Very stable optical pulse trains at gigabit repetition rates were generated using harmonica mode locking. The supermode noise was suppressed to 60 dB below the signal level and the root-mean-square timing jitter (0.45 kHz-1 MHz) was found to be about 1% of the pulse duration. A continuous wavelength tuning range of 1.8 nm was achieved by changing the semiconductor laser temperature from 11.4 to 30 °C.

  18. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  19. Electron transport behaviour in Nb-doped SrTiO3 bicrystals.

    PubMed

    Yamamoto, T; Ikuhara, Y

    2001-01-01

    In order to elucidate the relationship between electron transport behaviour and defect chemistry, grain boundary structure and current-voltage characteristics across the boundary were investigated for Nb-doped SrTiO3 bicrystals. Two kinds of boundaries, i.e. small angle and random boundaries, were prepared for 0.2at% and 1.0at% Nb-doped SrTiO3. The bicrystals were prepared by joining two single crystals at 1400 degrees C for 10 h under a pressure of 0.4 MPa in air. High-resolution transmission electron microscopy (HRTEM) study revealed that all of the joined boundaries are free from any secondary phases or amorphous films. On the other hand, it was found that non-linearity in current-voltage dependence becomes remarkable by reduction of cooling rate after joining in small angle boundaries of 0.2at% Nb-doped SrTiO3 bicrystal. In addition, the random boundary of 1.0at% Nb-doped SrTiO3 bicrystal exhibits clear alpha = 2 I-V relation, which appears across a contact of semiconductor-insulator-semiconductor (n-i-n). From the results of HRTEM study and I-V behaviours, it could be concluded that the electron transport mechanism is controlled mainly by defect chemistry and not by the grain boundary structure.

  20. Colloquium: Persistent spin textures in semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Schliemann, John

    2017-01-01

    Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by proposals for quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling electron spins in semiconductors are generically subject to rather fast decoherence. In two-dimensional quantum wells made of zinc-blende semiconductors, however, the spin-orbit interaction can be engineered to produce persistent spin structures with extraordinarily long spin lifetimes even in the presence of disorder and imperfections. Experimental and theoretical developments on this subject for both n -doped and p -doped structures are reviewed and possible device applications are discussed.

  1. Amorphous metal composites

    DOEpatents

    Byrne, Martin A.; Lupinski, John H.

    1984-01-01

    An improved amorphous metal composite and process of making the composite. The amorphous metal composite comprises amorphous metal (e.g. iron) and a low molecular weight thermosetting polymer binder. The process comprises placing an amorphous metal in particulate form and a thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite.

  2. Electron gas grid semiconductor radiation detectors

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  3. Unusual Changes in Electronic Band-Edge Energies of the Nanostructured Transparent n-Type Semiconductor Zr-Doped Anatase TiO2 (Ti1-xZrxO2; x < 0.3).

    PubMed

    Mieritz, Daniel G; Renaud, Adèle; Seo, Dong-Kyun

    2016-07-05

    By the establishment of highly controllable synthetic routes, electronic band-edge energies of the n-type transparent semiconductor Zr-doped anatase TiO2 have been studied holistically for the first time up to 30 atom % Zr, employing powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, nitrogen gas sorption measurements, UV/vis spectroscopies, and Mott-Schottky measurements. The materials were produced through a sol-gel synthetic procedure that ensures good compositional homogeneity of the materials, while introducing nanoporosity in the structure, by achieving a mild calcination condition. Vegard's law was discovered among the homogeneous samples, and correlations were established between the chemical compositions and optical and electronic properties of the materials. Up to 20% Zr doping, the optical energy gap increases to 3.29 eV (vs 3.19 eV for TiO2), and the absolute conduction band-edge energy increases to -3.90 eV (vs -4.14 eV). The energy changes of the conduction band edge are more drastic than what is expected from the average electronegativities of the compounds, which may be due to the unnatural coordination environment around Zr in the anatase phase.

  4. Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Konak, Tetyana; Tekavec, Michael; Fedorov, Vladimir V.; Mirov, Sergey B.

    2011-02-01

    We report a comprehensive study of gamma-irradiation on optical, electrical, and laser characteristics of pure and transition-metal doped single and polycrystalline ZnS and ZnSe. Polished pure, Cr-doped, and Ag, Au, Cu, Al, In, and Mn co-doped ZnS and ZnSe crystals after absorption and electro-conductivity characterization were gamma-irradiated at doses of 1.37x108, and 1.28x108 rad at +10 and -3°C, respectively. Dynamic RT absorption studies, electro-conductivity measurements and mid-IR lasing were performed for different exposition times of crystals at RT. Cr:ZnSe and Cr:ZnS lasers based on identical gamma-irradiated and non-irradiated crystals featured a very similar pump thresholds, slope efficiencies, and output powers.

  5. High resolution three-dimensional doping profiler

    DOEpatents

    Thundat, Thomas G.; Warmack, Robert J.

    1999-01-01

    A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.

  6. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Wienkes, Lee Raymond

    Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

  7. Amorphous carbon for photovoltaics

    NASA Astrophysics Data System (ADS)

    Risplendi, Francesca; Grossman, Jeffrey C.

    2015-03-01

    All-carbon solar cells have attracted attention as candidates for innovative photovoltaic devices. Carbon-based materials such as graphene, carbon nanotubes (CNT) and amorphous carbon (aC) have the potential to present physical properties comparable to those of silicon-based materials with advantages such as low cost and higher thermal stability.In particular a-C structures are promising systems in which both sp2 and sp3 hybridization coordination are present in different proportions depending on the specific density, providing the possibility of tuning their optoelectronic properties and achieving comparable sunlight absorption to aSi. In this work we employ density functional theory to design suitable device architectures, such as bulk heterojunctions (BHJ) or pn junctions, consisting of a-C as the active layer material.Regarding BHJ, we study interfaces between aC and C nanostructures (such as CNT and fullerene) to relate their optoelectronic properties to the stoichiometry of aC. We demonstrate that the energy alignment between the a-C mobility edges and the occupied and unoccupied states of the CNT or C60 can be widely tuned by varying the aC density to obtain a type II interface.To employ aC in pn junctions we analyze the p- and n-type doping of a-C focusingon an evaluation of the Fermi level and work function dependence on doping.Our results highlight promising features of aC as the active layer material of thin-film solar cells.

  8. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    NASA Technical Reports Server (NTRS)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  9. Molecular approaches to p- and n-nanoscale doping of Ge 1-ySn y semiconductors: Structural, electrical and transport properties

    NASA Astrophysics Data System (ADS)

    Xie, Junqi; Tolle, J.; D'Costa, V. R.; Weng, C.; Chizmeshya, A. V. G.; Menendez, J.; Kouvetakis, J.

    2009-08-01

    We report the development of practical doping protocols via designer molecular sources to create n- and p-type doped Ge 1-ySn y layers grown directly upon Si(1 0 0). These materials will have applications in the fabrication of advanced PIN devices that are intended to extend the infrared optical response beyond that of Ge by utilizing the Sn composition as an additional design parameter. Highly controlled and efficient n-doping of single-layer structures is achieved using custom built P(GeH 3) 3 and As(GeH 3) 3, precursors containing preformed Ge-As and Ge-P near-tetrahedral bonding arrangements compatible with the structure of the host Ge-Sn lattice. Facile substitution and complete activation of the P and As atoms at levels ˜10 17-10 19 cm -3 is obtained via in situ depositions at low temperatures (350 °C). Acceptor doping is readily achieved using conventional diborane yielding carrier concentrations between 10 17-10 19 cm -3 under similar growth conditions. Full activation of the as-grown dopant concentrations is demonstrated by combined SIMS and Hall experiments, and corroborated using a contactless spectroscopic ellipsometry approach. RTA processing of the samples leads to a significant increase in carrier mobility comparable to that of bulk Ge containing similar doping levels. The alloy scattering contribution appears to be negligible for electron carrier concentrations beyond 10 19 cm -3 in n-type samples and hole concentrations beyond 10 18 cm -3 in p-type samples. A comparative study using the classical lower-order hydrides PH 3 and AsH 3 produced n-doped films with carrier densities (up to 9 × 10 19 cm -3) similar to those afforded by P(GeH 3) 3 and As(GeH 3) 3. However, early results indicate that the simpler PH 3 and AsH 3 sources yield materials with inferior morphology and microstructure. Calculations of surface energetics using bond enthalpies suggest that the latter massive compounds bind to the surface via strong Ge-Ge bonds and likely act as

  10. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  11. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  12. Electrowetting on semiconductors

    NASA Astrophysics Data System (ADS)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  13. Method for depositing layers of high quality semiconductor material

    DOEpatents

    Guha, Subhendu; Yang, Chi C.

    2001-08-14

    Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

  14. Low temperature production of large-grain polycrystalline semiconductors

    DOEpatents

    Naseem, Hameed A.; Albarghouti, Marwan

    2007-04-10

    An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

  15. Efficient photocatalytic degradation of rhodamine-B by Fe doped CuS diluted magnetic semiconductor nanoparticles under the simulated sunlight irradiation

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-12-01

    The present work is planned for a simple, inexpensive and efficient approach for the synthesis of Cu1-xFexS (x = 0.00, 0.01, 0.03, 0.05 and 0.07) nanoparticles via simplistic chemical co-precipitation route by using ethylene diamine tetra acetic acid (EDTA) as a capping molecules. As synthesized nanoparticles were used as competent catalysts for degradation of rhodamine-B organic dye pollutant. The properties of prepared samples were analyzed with energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible optical absorption spectroscopy, Fourier transform infrared (FTIR) spectra, Raman spectra and vibrating sample magnetometer (VSM). EDAX spectra corroborated the existence of Fe in prepared nanoparticles within close proximity to stoichiometric ratio. XRD, FTIR and Raman patterns affirmed that configuration of single phase hexagonal crystal structure as that of (P63/mmc) CuS, without impurity crystals. The average particle size estimated by TEM scrutiny is in the assortment of 5-10 nm. UV-visible optical absorption measurements showed that band gap narrowing with increasing the Fe doping concentration. VSM measurements revealed that 3% Fe doped CuS nanoparticles exhibited strong ferromagnetism at room temperature and changeover of magnetic signs from ferromagnetic to the paramagnetic nature with increasing the Fe doping concentration in CuS host lattice. Among all Fe doped CuS nanoparticles, 3% Fe inclusion CuS sample shows better photocatalytic performance in decomposition of RhB compared with the pristine CuS. Thus as synthesized Cu0·97Fe0·03S nanocatalysts are tremendously realistic compounds for photocatalytic fictionalization in the direction of organic dye degradation under visible light.

  16. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    NASA Technical Reports Server (NTRS)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  17. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  18. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  19. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  20. Optical Properties of Non-Crystalline Semiconductors.

    DTIC Science & Technology

    1984-01-01

    Instruments, 1974, unpublished. 42. de Neufville, J.P., Photostructural transformations in amorphous solids, 0 in Optical Properties of Solids --New...semiconductors, in Optical Properties of Solids , Nudelman, S., and Mitra, S.S., eds., Plenum, N.Y., 1969, 123. 52. Cody, G.D., Brooks, B.G., and

  1. Nanocrystalline silicon/amorphous silicon dioxide superlattices

    SciTech Connect

    Fauchet, P.M.; Tsybeskov, L.; Zacharias, M. |; Hirschman, K. |

    1998-12-31

    Thin layers made of densely packed silicon nanocrystals sandwiched between amorphous silicon dioxide layers have been manufactured and characterized. An amorphous silicon/amorphous silicon dioxide superlattice is first grown by CVD or RF sputtering. The a-Si layers are recrystallized in a two-step procedure (nucleation + growth) for form layers of nearly identical nanocrystals whose diameter is given by the initial a-Si layer thickness. The recrystallization is monitored using a variety of techniques, including TEM, X-Ray, Raman, and luminescence spectroscopies. When the a-Si layer thickness decreases (from 25 nm to 2.5 nm) or the a-SiO{sub 2} layer thickness increases (from 1.5 nm to 6 nm), the recrystallization temperature increases dramatically compared to that of a single a-Si film. The removal of the a-Si tissue present between the nanocrystals, the passivation of the nanocrystals, and their doping are discussed.

  2. Isoelectronic co-doping

    DOEpatents

    Mascarenhas, Angelo

    2004-11-09

    Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  3. Construction and characterization of amorphous-silicon test structures

    SciTech Connect

    Koppel, L.N.; Milgram, A.A.

    1987-08-01

    Semiconductor device fabrication and characterization work indicates that construction of amorphous-Si photoconductive radiation detectors is feasible. Amorphous Si films are mechanically stable and adhere well to candidate electrode materials; form Schottky-type rectifying junctions with several electrode metals. Materials exist for forming ohmic contacts on amorphous-Si films. Fabrication facilities accessible to ARACOR produce material of nominal band-gap energy, dangling bond density, and dielectric constant. Modification of amorphous-Si conductivity is feasible and supports the construction of PIN devices. Significant photoconductive response is observed for both Schottky-type and PIN devices, with the latter providing superior performance. It is recommended that construction and experimental evaluation of prototype amorphous-Si radiation detectors be persued in Phase II.

  4. Fabrication and Characterization of Amorphous/Nanocrystalline Thin Film Composite

    NASA Astrophysics Data System (ADS)

    Newton, Benjamin S.

    Combining the absorption abilities of amorphous silicon and the electron transport capabilities of crystalline silicon would be a great advantage to not only solar cells but other semiconductor devices. In this work composite films were created using molecular beam epitaxy and electron beam deposition interchangeably as a method to create metallic precursors. Aluminum induced crystallization techniques were used to convert an amorphous silicon film with a capping layer of aluminum nanodots into a film composed of a mixture of amorphous silicon and nanocrystalline silicon. This layer was grown into the amorphous layer by cannibalizing a portion of the amorphous silicon material during the aluminum induced crystallization. Characterization was performed on films and metallic precursors utilizing SEM, TEM, ellipsometry and spectrophotometer.

  5. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  6. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  7. Eu 3+ -Doped Wide Band Gap Zn 2 SnO 4 Semiconductor Nanoparticles: Structure and Luminescence

    SciTech Connect

    Dimitrievska, Mirjana; Ivetić, Tamara B.; Litvinchuk, Alexander P.; Fairbrother, Andrew; Miljević, Bojan B.; Štrbac, Goran R.; Pérez Rodríguez, Alejandro; Lukić-Petrović, Svetlana R.

    2016-08-25

    Nanocrystalline Zn2SnO4 powders doped with Eu3+ ions were synthesized via a mechanochemical solid-state reaction method followed by postannealing in air at 1200 degrees C. X-ray diffraction (XRD), energy-dispersive X-ray (EDX), and Raman and photoluminescence (PL) spectroscopies provide convincing evidence for the incorporation of Eu3+ ions into the host matrix on noncentrosymmetric sites of the cubic inverse spinel lattice. Microstructural analysis shows that the crystalline grain size decreases with the addition of Eu3+. Formation of a nanocrystalline Eu2Sn2O7 secondary phase is also observed. Luminescence spectra of Eu3+-doped samples show several emissions, including narrow-band magnetic dipole emission at 595 nm and electric dipole emission at 615 nm of the Eu3+ ions. Excitation spectra and lifetime measurements suggest that Eu3+ ions are incorporated at only one symmetry site. According to the crystal field theory, it is assumed that Eu3+ ions participate at octahedral sites of Zn2+ or Sn4+ under a weak crystal field, rather than at the tetrahedral sites of Zn2+, because of the high octahedral stabilization energy for Eu3+. Activation of symmetry forbidden (IR-active and silent) modes is observed in the Raman scattering spectra of both pure and doped samples, indicating a disorder of the cation sublattice of Zn2SnO4 nanocrystallites. These results were further supported by the first principle lattice dynamics calculations. The spinel-type Zn2SnO4 shows effectiveness in hosting Eu3+ ions, which could be used as a prospective green/red emitter. This work also illustrates how sustainable and simple preparation methods could be used for effective engineering of material properties.

  8. Theory of amorphous ices

    PubMed Central

    Limmer, David T.; Chandler, David

    2014-01-01

    We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens. PMID:24858957

  9. Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method.

    PubMed

    Balamurali, Subramanian; Chandramohan, Rathinam; Karunakaran, Marimuthu; Mahalingam, Thayan; Parameswaran, Padmanaban; Suryamurthy, Nagamani; Sukumar, Arcod Anandhakrishnan

    2013-07-01

    Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications.

  10. Luminescent Colloidal Semiconductor Nanocrystals Containing Copper: Synthesis, Photophysics, and Applications.

    PubMed

    Knowles, Kathryn E; Hartstein, Kimberly H; Kilburn, Troy B; Marchioro, Arianna; Nelson, Heidi D; Whitham, Patrick J; Gamelin, Daniel R

    2016-09-28

    Copper-doped semiconductors are classic phosphor materials that have been used in a variety of applications for many decades. Colloidal copper-doped semiconductor nanocrystals have recently attracted a great deal of interest because they combine the solution processability and spectral tunability of colloidal nanocrystals with the unique photoluminescence properties of copper-doped semiconductor phosphors. Although ternary and quaternary semiconductors containing copper, such as CuInS2 and Cu2ZnSnS4, have been studied primarily in the context of their photovoltaic applications, when synthesized as colloidal nanocrystals, these materials have photoluminescence properties that are remarkably similar to those of copper-doped semiconductor nanocrystals. This review focuses on the luminescent properties of colloidal copper-doped, copper-based, and related copper-containing semiconductor nanocrystals. Fundamental investigations into the luminescence of copper-containing colloidal nanocrystals are reviewed in the context of the well-established luminescence mechanisms of bulk copper-doped semiconductors and copper(I) molecular coordination complexes. The use of colloidal copper-containing nanocrystals in applications that take advantage of their luminescent properties, such as bioimaging, solid-state lighting, and luminescent solar concentrators, is also discussed.

  11. Effects of hydrogen annealing and codoping (Mn, Fe, Ni, Ga, Y) of nanocrystalline Cu-doped ZnO dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Bououdina, Mohamed; Aziz Dakhel, Aqeel

    2015-01-01

    Zinc oxide (ZnO) codoped with Cu and M ions (M = Mn, Fe, Ni, Ga, Y) powders were synthesised by simultaneous thermal co-decomposition of a mixture of zinc and metal complexes. The synthesised chemical formula for the prepared solid solution is Zn0.97Cu0.01M0.02O. X-ray diffraction (XRD) analysis confirms the formation of single nanocrystalline structure of the as-prepared powders, thus, both Cu and M ions were incorporated into ZnO lattice forming solid solutions. Magnetic measurements reveal that all the as-synthesised doped ZnO powders gained partial (RT-FM) properties but with different strength and BH-behaviour depends on the nature of the doping (M). Furthermore, H2 post-treatment was subsequently carried out and it was found that the observed RT-FM is enhanced. Very interestingly, in case of Ni dopant, the whole powder becomes completely ferromagnetic with coercivity (Hc), remanence (Mr) and saturation magnetisation (Ms) of 133.6 Oe, 1.086 memu/g and 4.959 memu/g, respectively. The value of Ms was increased by ~ 95% in comparison with as-prepared.

  12. Amorphous and polycrystalline photoconductors for direct conversion flat panel x-ray image sensors.

    PubMed

    Kasap, Safa; Frey, Joel B; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S; Rowlands, John A

    2011-01-01

    In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI(2) and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been

  13. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

    PubMed Central

    Kasap, Safa; Frey, Joel B.; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S.; Rowlands, John A.

    2011-01-01

    In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been

  14. Charge transport model in solid-state avalanche amorphous selenium and defect suppression design

    NASA Astrophysics Data System (ADS)

    Scheuermann, James R.; Miranda, Yesenia; Liu, Hongyu; Zhao, Wei

    2016-01-01

    Avalanche amorphous selenium (a-Se) in a layer of High Gain Avalanche Rushing Photoconductor (HARP) is being investigated for its use in large area medical imagers. Avalanche multiplication of photogenerated charge requires electric fields greater than 70 V μm-1. For a-Se to withstand this high electric field, blocking layers are used to prevent the injection of charge carriers from the electrodes. Blocking layers must have a high injection barrier and deep trapping states to reduce the electric field at the interface. In the presence of a defect in the blocking layer, a distributed resistive layer (DRL) must be included into the structure to build up space charge and reduce the electric field in a-Se and the defect. A numerical charge transport model has been developed to optimize the properties of blocking layers used in various HARP structures. The model shows the incorporation of a DRL functionality into the p-layer can reduce dark current at a point defect by two orders of magnitude by reducing the field in a-Se to the avalanche threshold. Hole mobility in a DRL of ˜10-8 cm2 V-1 s-1 at 100 V μm-1 as demonstrated by the model can be achieved experimentally by varying the hole mobility of p-type organic or inorganic semiconductors through doping, e.g., using Poly(9-vinylcarbozole) doped with 1%-3% (by weight) of poly(3-hexylthiopene).

  15. Half-metallic diluted antiferromagnetic semiconductors.

    PubMed

    Akai, H; Ogura, M

    2006-07-14

    The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first-principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed.

  16. Write-once memory effects observed in Ga-doped ZnO/organic semiconductor/MoO3/Au structures

    NASA Astrophysics Data System (ADS)

    Hasegawa, Junya; Nagase, Takashi; Kobayashi, Takashi; Naito, Hiroyoshi

    2016-03-01

    Electrical switching phenomena in a device configuration of inverted organic light-emitting diodes have been observed. The device structure was Ga-doped ZnO (GZO)/N,N‧-dicarbazolyl-3,5-benzene (m-CP)/MoO3 (10 nm)/Au (50 nm) fabricated by solution coating. The devices are write-once-read-many-times (WORM) memory devices with low switching voltage (<3 V) and long retention time (>700 h). Equivalent circuits in OFF and ON states are determined from the Cole-Cole plots measured by impedance spectroscopy. The switching phenomena and nonvolatile memory behavior are attributable to the formation conductive Au filaments in the m-CP layer of the ON state.

  17. Comparative studies for Cr4+:YAG crystal and AlGaInAs semiconductor used as a saturable absorber in Q-switched Yb-doped fiber lasers.

    PubMed

    Huang, J Y; Zhuang, W Z; Huang, W C; Su, K W; Hu, C; Huang, K F; Chen, Y F

    2009-11-09

    We demonstrate comparative studies for Cr(4+):YAG crystal and AlGaInAs quantum-well (QW) used as a saturable absorbers in passively Q-switched Yb-doped fiber lasers. Both saturable absorbers were designed to be possessed of nearly the same initial transmission. Under a pump power of 24 W, the average output powers were up to 14.4 W and 13.8 W obtained with the AlGaInAs QWs and with the Cr(4+):YAG crystal, respectively. The maximum pulse energies obtained with the Cr(4+):YAG crystal and with the AlGaInAs QWs were found to be 0.35 mJ and 0.45 mJ, respectively.

  18. 759  fs pulse generation with Nd3+-doped CNGS ordered crystal based on a semiconductor saturable absorber mirror.

    PubMed

    Li, Jing; Zhang, Xiao-Tong; He, Jing-Liang; Guo, Shiyi; Ning, Jian; Lou, Fei; Zhao, Ruwei; Su, Xian-Cui; Hou, Jia; Zhang, Bai-Tao

    2016-07-10

    A diode-pumped passively continuous wave mode-locked laser at 1064.2 nm based on an ordered Nd:CNGS crystal has been experimentally investigated (for the first time, to our knowledge). Stable mode-locked pulses with a duration of 759 fs were produced at a repetition rate of 43.2 MHz. It is the shortest pulse generation of mode-locked lasers based on Nd3+-doped ordered crystal, as far as we know. A maximum average mode-locked output power of 133 mW was obtained at the absorbed pumped power of 6.7 W, and corresponding single-pulse energy and peak power were determined to be 3.1 nJ and 4.1 kW, respectively. The results indicate that the Nd:CNGS as an ordered crystal is indeed a potential candidate as a femtosecond laser gain medium.

  19. FOREWORD: Focus on Superconductivity in Semiconductors Focus on Superconductivity in Semiconductors

    NASA Astrophysics Data System (ADS)

    Takano, Yoshihiko

    2008-12-01

    Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm-3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors. This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008), which was held at the National Institute for Materials Science (NIMS), Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM) in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1). The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al) and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al) are discussed, and In2O3 (Makise et al) is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  20. Nanocrystal dispersed amorphous alloys

    NASA Technical Reports Server (NTRS)

    Perepezko, John H. (Inventor); Allen, Donald R. (Inventor); Foley, James C. (Inventor)

    2001-01-01

    Compositions and methods for obtaining nanocrystal dispersed amorphous alloys are described. A composition includes an amorphous matrix forming element (e.g., Al or Fe); at least one transition metal element; and at least one crystallizing agent that is insoluble in the resulting amorphous matrix. During devitrification, the crystallizing agent causes the formation of a high density nanocrystal dispersion. The compositions and methods provide advantages in that materials with superior properties are provided.

  1. Multiple cell photoresponsive amorphous alloys and devices

    SciTech Connect

    Ovshinsky, S.R.; Adler, D.

    1990-01-02

    This patent describes an improved photoresponsive tandem multiple solar cell device. The device comprising: at least a first and second superimposed cell of various materials. The first cell being formed of a silicon alloy material. The second cell including an amorphous silicon alloy semiconductor cell body having an active photoresponsive region in which radiation can impinge to produce charge carriers, the amorphous cell body including at least one density of states reducing element. The element being fluorine. The amorphous cell body further including a band gap adjusting element therein at least in the photoresponsive region to enhance the radiation absorption thereof, the adjusting element being germanium: the second cell being a multi-layer body having deposited semiconductor layers of opposite (p and n) conductivity type; and the first cell being formed with the second cell in substantially direct Junction contact therebetween. The first and second cells designed to generate substantially matched currents from each cell from a light source directed through the first cell and into the second cell.

  2. Novel room temperature ferromagnetic semiconductors

    SciTech Connect

    Gupta, Amita

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting

  3. Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Hâllstedt, J.; Kolahdouz, M.; Ghandi, R.; Radamson, H. H.; Wise, R.

    2008-03-01

    This study presents investigations about the physical mechanisms, origin, and methods to control the pattern dependency in selective epitaxial growth of Si1-xGex (x=0.14-0.32) layers. It is shown with a comprehensive experimental study that the local Si coverage of individual chips on patterned wafers is the main parameter for the layer profile in the epitaxial growth. This was explained by the gas depletion of the growth species in the low velocity boundary layer over the wafer. The gas depletion radius around each oxide opening was in the centimeter range which is related to the boundary layer thickness. The results from these experiments were applied to grow Si0.75Ge0.25 layers with B concentration of 4×1020cm-3 selectively for elevated source and drains in fully depleted ultrathin body silicon on insulator p metal oxide semiconductor field effect transistor (p-MOSFET) devices. The epitaxy control was maintained over a wide range of device sizes by optimized process parameters in combination with a wafer pattern design consisting of dummy features causing a uniform gas depletion over the chips on the wafer.

  4. Nanocrystal doped matrixes

    DOEpatents

    Parce, J. Wallace; Bernatis, Paul; Dubrow, Robert; Freeman, William P.; Gamoras, Joel; Kan, Shihai; Meisel, Andreas; Qian, Baixin; Whiteford, Jeffery A.; Ziebarth, Jonathan

    2010-01-12

    Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

  5. Multiple Applications of GaAs semiconductors

    NASA Astrophysics Data System (ADS)

    Martel, Jenrené; Wonka, Willy

    2003-03-01

    The object of this discussion will be to explore the many facets of Gallium Arsenide(GaAs) semiconductors. The session will begin with a brief overview of the basic properties of semiconductors in general(band gap, doping, charge mobility etc.). It will then follow with a closer look at the properties of GaAs and how these properties could potentially translate into some very exciting applications. Furthermore, current applications of GaAs semiconductors will be dicussed and analyzed. Finally, physical limits and advantages/disadvantages of GaAs will be considered.

  6. Materials Science and Technology, Volume 4, Electronic Structure and Properties of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schröter, Wolfgang

    1996-12-01

    This volume spans the field of semiconductor physics, with particular emphasis on concepts relevant to semiconductor technology. From the Contents: Lannoo: Band Theory Applied to Semiconductors. Ulbrich: Optical Properties and Charge Transport. Watkins: Intrinsic Point Defects in Semiconductors. Feichtinger: Deep Centers in Semiconductors. Gösele/Tan: Equilibria, Nonequilibria, Diffusion, and Precipitation. Alexander/Teichler: Dislocations. Thibault/Rouvière/Bourret: Grain Boundaries in Semiconductors. Ourmazd/Hull/Tung: Interfaces. Chang: The Hall Effect in Quantum Wires. Street/Winer: Material Properties of Hydrogenated Amorphous Silicon. Schröter/Seibt/Gilles: High-Temperature Properties of 3d Transition Elements in Silicon.

  7. Computer models for amorphous silicon hydrides

    NASA Astrophysics Data System (ADS)

    Mousseau, Normand; Lewis, Laurent J.

    1990-02-01

    A procedure for generating fully coordinated model structures appropriate to hydrogenated amorphous semiconductors is described. The hydrogen is incorporated into an amorphous matrix using a bond-switching process similar to that proposed by Wooten, Winer, and Weaire, which ensures that fourfold coordination is preserved. After each inclusion of hydrogen, the structure is relaxed using a finite-temperature Monte Carlo algorithm. The method is applied to a-Si:H at various hydrogen concentrations. The resulting model structures are found to be in excellent agreement with recent neutron-scattering measurements on a sample with 12 at. % H. Our prescription, which is essentially nonlocal, allows great flexibility and can easily be extended to related systems.

  8. Oxide semiconductors for organic opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.

    In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the

  9. Construction and characterization of amorphous-silicon test structures

    SciTech Connect

    Koppel, L.N.; Milgram, A.A.

    1987-08-01

    The central goal of the project was to qualify amorphous silicon, a newly developed semiconductor material, as the basis for economical large-area photoconductive detectors of penetrating radiation. The thrust of the project was to establish the feasibility of constructing photoconductive amorphous-silicon devices whose electronic properties supported the radiation detection application. This issue of feasibility was successfully resolved by construction and experimental characterization of amorphous-silicon test pieces representative of the existing state-of-the-art. The focus of this work was the measurement of material electronic properties known to affect the performance of solid-state radiation detectors, and the investigation of candidate junction-device architectures. The construction and experimental evaluation of prototype radiation detectors based on amorphous silicon was beyond the scope of the current effort, and will form the core of work to be accomplished within a Phase II continuation of the project.

  10. First principles prediction of amorphous phases using evolutionary algorithms

    NASA Astrophysics Data System (ADS)

    Nahas, Suhas; Gaur, Anshu; Bhowmick, Somnath

    2016-07-01

    We discuss the efficacy of evolutionary method for the purpose of structural analysis of amorphous solids. At present, ab initio molecular dynamics (MD) based melt-quench technique is used and this deterministic approach has proven to be successful to study amorphous materials. We show that a stochastic approach motivated by Darwinian evolution can also be used to simulate amorphous structures. Applying this method, in conjunction with density functional theory based electronic, ionic and cell relaxation, we re-investigate two well known amorphous semiconductors, namely silicon and indium gallium zinc oxide. We find that characteristic structural parameters like average bond length and bond angle are within ˜2% of those reported by ab initio MD calculations and experimental studies.

  11. Structural study of amorphous polyaniline

    NASA Astrophysics Data System (ADS)

    Laridjani, M.; Pouget, J. P.; MacDiarmid, A. G.; Epstein, A. J.

    1992-06-01

    Many materials, especially polymers, have a substantial volume fraction with no long range crystalline order. Through these regions are often termed amorphous, they frequently have a specific local order. We describe and use here a method, base on a non-energy dispersive X-ray diffraction technique, to obtain good quality interference functions and, by Fourier transform, radial distribution functions of the amorphous structure of polymers. We apply this approach to members of a family of electronic polymers of current interest : polyaniline emeraldine bases. We show that the local order exhibits significant differences in type I and type II materials, precipitated as salt and base respectively. These studies demonstrate the importance of sample preparation in evaluating the physical properties of polyaniline, and provide a structural origin for memory effects observed in the doping-dedoping processes. Beaucoup de matériaux, spécialement les polymères, ont une importante fraction de leur volume sans ordre cristallin à longue portée. Bien que ces régions soient souvent appelées amorphes, elles présentent fréquemment un ordre local caractéristique. Nous décrivons et utilisons dans ce papier une méthode, basée sur une technique de diffraction de rayons X non dispersive en énergie, pour obtenir des fonctions d'interférence de bonne qualité et, par transformée de Fourier, la fonction de distribution radiale des polymères amorphes. Nous appliquons cette technique à plusieurs éléments d'une même famille de polymères électroniques d'intérêt actuel : les polyanilines éméraldine bases. Nous montrons que l'ordre local présente d'appréciables différences dans les matériaux de type I et II, préparés respectivement sous forme de sel et de base. Cette étude démontre l'importance des conditions de préparation sur les propriétés physiques du polyaniline et donne une base structurale aux effets observés dans les processus de dopage-dédopage de

  12. Structure and Properties of Amorphous Transparent Conducting Oxides

    NASA Astrophysics Data System (ADS)

    Medvedeva, Julia

    Driven by technological appeal, the research area of amorphous oxide semiconductors has grown tremendously since the first demonstration of the unique properties of amorphous indium oxide more than a decade ago. Today, amorphous oxides, such as a-ITO, a-IZO, a-IGZO, or a-ZITO, exhibit the optical, electrical, thermal, and mechanical properties that are comparable or even superior to those possessed by their crystalline counterparts, pushing the latter out of the market. Large-area uniformity, low-cost low-temperature deposition, high carrier mobility, optical transparency, and mechanical flexibility make these materials appealing for next-generation thin-film electronics. Yet, the structural variations associated with crystalline-to-amorphous transition as well as their role in carrier generation and transport properties of these oxides are far from being understood. Although amorphous oxides lack grain boundaries, factors like (i) size and distribution of nanocrystalline inclusions; (ii) spatial distribution and clustering of incorporated cations in multicomponent oxides; (iii) formation of trap defects; and (iv) piezoelectric effects associated with internal strains, will contribute to electron scattering. In this work, ab-initio molecular dynamics (MD) and accurate density-functional approaches are employed to understand how the properties of amorphous ternary and quaternary oxides depend on quench rates, cation compositions, and oxygen stoichiometries. The MD results, combined with thorough experimental characterization, reveal that interplay between the local and long-range structural preferences of the constituent oxides gives rise to a complex composition-dependent structural behavior in the amorphous oxides. The proposed network models of metal-oxygen polyhedra help explain the observed intriguing electrical and optical properties in In-based oxides and suggest ways to broaden the phase space of amorphous oxide semiconductors with tunable properties. The

  13. Trehalose amorphization and recrystallization.

    PubMed

    Sussich, Fabiana; Cesàro, Attilio

    2008-10-13

    The stability of the amorphous trehalose prepared by using several procedures is presented and discussed. Amorphization is shown to occur by melting (T(m)=215 degrees C) or milling (room temperature) the crystalline anhydrous form TRE-beta. Fast dehydration of the di-hydrate crystalline polymorph, TRE-h, also produces an amorphous phase. Other dehydration procedures of TRE-h, such as microwave treatment, supercritical extraction or gentle heating at low scan rates, give variable fractions of the polymorph TRE-alpha, that undergo amorphization upon melting (at lower temperature, T(m)=130 degrees C). Additional procedures for amorphization, such as freeze-drying, spray-drying or evaporation of trehalose solutions, are discussed. All these procedures are classified depending on the capability of the undercooled liquid phase to undergo cold crystallization upon heating the glassy state at temperatures above the glass transition temperature (T(g)=120 degrees C). The recrystallizable amorphous phase is invariably obtained by the melt of the polymorph TRE-alpha, while other procedures always give an amorphous phase that is unable to crystallize above T(g). The existence of two different categories is analyzed in terms of the transformation paths and the hypothesis that the systems may exhibit different molecular mobilities.

  14. Hydrogen in amorphous silicon

    SciTech Connect

    Peercy, P. S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH/sub 1/) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon.

  15. Nanocrystal diffusion doping.

    PubMed

    Vlaskin, Vladimir A; Barrows, Charles J; Erickson, Christian S; Gamelin, Daniel R

    2013-09-25

    A diffusion-based synthesis of doped colloidal semiconductor nanocrystals is demonstrated. This approach involves thermodynamically controlled addition of both impurity cations and host anions to preformed seed nanocrystals under equilibrium conditions, rather than kinetically controlled doping during growth. This chemistry allows thermodynamic crystal compositions to be prepared without sacrificing other kinetically trapped properties such as shape, size, or crystallographic phase. This doping chemistry thus shares some similarities with cation-exchange reactions, but proceeds without the loss of host cations and excels at the introduction of relatively unreactive impurity ions that have not been previously accessible using cation exchange. Specifically, we demonstrate the preparation of Cd(1-x)Mn(x)Se (0 ≤ x ≤ ∼0.2) nanocrystals with narrow size distribution, unprecedentedly high Mn(2+) content, and very large magneto-optical effects by diffusion of Mn(2+) into seed CdSe nanocrystals grown by hot injection. Controlling the solution and lattice chemical potentials of Cd(2+) and Mn(2+) allows Mn(2+) diffusion into the internal volumes of the CdSe nanocrystals with negligible Ostwald ripening, while retaining the crystallographic phase (wurtzite or zinc blende), shape anisotropy, and ensemble size uniformity of the seed nanocrystals. Experimental results for diffusion doping of other nanocrystals with other cations are also presented that indicate this method may be generalized, providing access to a variety of new doped semiconductor nanostructures not previously attainable by kinetic routes or cation exchange.

  16. Modeling of Spatially Correlated Energetic Disorder in Organic Semiconductors.

    PubMed

    Kordt, Pascal; Andrienko, Denis

    2016-01-12

    Mesoscale modeling of organic semiconductors relies on solving an appropriately parametrized master equation. Essential ingredients of the parametrization are site energies (driving forces), which enter the charge transfer rate between pairs of neighboring molecules. Site energies are often Gaussian-distributed and are spatially correlated. Here, we propose an algorithm that generates these energies with a given Gaussian distribution and spatial correlation function. The method is tested on an amorphous organic semiconductor, DPBIC, illustrating that the accurate description of correlations is essential for the quantitative modeling of charge transport in amorphous mesophases.

  17. Vacancy and Doping States in Monolayer and bulk Black Phosphorus

    PubMed Central

    Guo, Yuzheng; Robertson, John

    2015-01-01

    The atomic geometries and transition levels of point defects and substitutional dopants in few-layer and bulk black phosphorus are calculated. The vacancy is found to reconstruct in monolayer P to leave a single dangling bond, giving a negative U defect with a +/− transition level at 0.24 eV above the valence band edge. The V− state forms an unusual 4-fold coordinated site. In few-layer and bulk black P, the defect becomes a positive U site. The divacancy is much more stable than the monovacancy, and it reconstructs to give no deep gap states. Substitutional dopants such as C, Si, O or S do not give rise to shallow donor or acceptor states but instead reconstruct to form non-doping sites analogous to DX or AX centers in GaAs. Impurities on black P adopt the 8-N rule of bonding, as in amorphous semiconductors, rather than simple substitutional geometries seen in tetrahedral semiconductors. PMID:26383634

  18. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

    PubMed Central

    2013-01-01

    Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm2 V–1 s–1. We show that it is possible to solution-process these materials at low process temperature (225–200 °C yielding mobilities up to 4.4 cm2 V–1 s–1) and demonstrate a facile “ink-on-demand” process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium. PMID:24511184

  19. A brief review of co-doping

    NASA Astrophysics Data System (ADS)

    Zhang, Jingzhao; Tse, Kinfai; Wong, Manhoi; Zhang, Yiou; Zhu, Junyi

    2016-12-01

    Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.

  20. PULSION® HP: Tunable, High Productivity Plasma Doping

    NASA Astrophysics Data System (ADS)

    Felch, S. B.; Torregrosa, F.; Etienne, H.; Spiegel, Y.; Roux, L.; Turnbaugh, D.

    2011-01-01

    Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism—deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

  1. Amorphous diamond films

    DOEpatents

    Falabella, S.

    1998-06-09

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  2. Amorphous pharmaceutical solids.

    PubMed

    Vranić, Edina

    2004-07-01

    Amorphous forms are, by definition, non-crystalline materials which possess no long-range order. Their structure can be thought of as being similar to that of a frozen liquid with the thermal fluctuations present in a liquid frozen out, leaving only "static" structural disorder. The amorphous solids have always been an essential part of pharmaceutical research, but the current interest has been raised by two developments: a growing attention to pharmaceutical solids in general, especially polymorphs and solvates and a revived interest in the science of glasses and the glass transition. Amorphous substances may be formed both intentionally and unintentionally during normal pharmaceutical manufacturing operations. The properties of amorphous materials can be exploited to improve the performance of pharmaceutical dosage forms, but these properties can also give rise to unwanted effects that need to be understood and managed in order for the systems to perform as required.

  3. Amorphous metal alloy

    DOEpatents

    Wang, R.; Merz, M.D.

    1980-04-09

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  4. Light-induced metastable structural changes in hydrogenated amorphous silicon

    SciTech Connect

    Fritzsche, H.

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  5. Transmissive metallic contact for amorphous silicon solar cells

    DOEpatents

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  6. Thermovoltaic semiconductor device including a plasma filter

    DOEpatents

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  7. Physics with chemically and isotopically pure semiconductors

    NASA Astrophysics Data System (ADS)

    Haller, E. E.

    1993-05-01

    Chemically and isotopically pure semiconductors offer a wealth of interesting physics. We review a number of impurity complexes which were discovered in ultrapure Germanium. They have led the way to the widely pursued studies of hydrogen in numerous semiconductors. Isotope related effects and processes include neutron transmutation doping, a technique used for a number of silicon and germanium devices. Isotopically pure and deliberately mixed crystals of germanium have been grown recently and have been used to study the dependence of the indirect bandgap and phonon properties on the mass and mass disorder of the nuclei. The large number of stable isotopes of the various semiconductors present a great potential for basic and applied studies. Semi-conductor isotope engineering may become a reality because of the new economic and political world order.

  8. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  9. Formation of amorphous materials

    DOEpatents

    Johnson, William L.; Schwarz, Ricardo B.

    1986-01-01

    Metastable amorphous or fine crystalline materials are formed by solid state reactions by diffusion of a metallic component into a solid compound or by diffusion of a gas into an intermetallic compound. The invention can be practiced on layers of metals deposited on an amorphous substrate or by intermixing powders with nucleating seed granules. All that is required is that the diffusion of the first component into the second component be much faster than the self-diffusion of the first component. The method is practiced at a temperature below the temperature at which the amorphous phase transforms into one or more crystalline phases and near or below the temperature at which the ratio of the rate of diffusion of the first component to the rate of self-diffusion is at least 10.sup.4. This anomalous diffusion criteria is found in many binary, tertiary and higher ordered systems of alloys and appears to be found in all alloy systems that form amorphous materials by rapid quenching. The method of the invention can totally convert much larger dimensional materials to amorphous materials in practical periods of several hours or less.

  10. Thin film memory matrix using amorphous and high resistive layers

    NASA Technical Reports Server (NTRS)

    Thakoor, Anilkumar P. (Inventor); Lambe, John (Inventor); Moopen, Alexander (Inventor)

    1989-01-01

    Memory cells in a matrix are provided by a thin film of amorphous semiconductor material overlayed by a thin film of resistive material. An array of parallel conductors on one side perpendicular to an array of parallel conductors on the other side enable the amorphous semiconductor material to be switched in addressed areas to be switched from a high resistance state to a low resistance state with a predetermined level of electrical energy applied through selected conductors, and thereafter to be read out with a lower level of electrical energy. Each cell may be fabricated in the channel of an MIS field-effect transistor with a separate common gate over each section to enable the memory matrix to be selectively blanked in sections during storing or reading out of data. This allows for time sharing of addressing circuitry for storing and reading out data in a synaptic network, which may be under control of a microprocessor.

  11. Ferromagnetism in doped or undoped spintronics nanomaterials

    NASA Astrophysics Data System (ADS)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  12. A Generalized Theory of Electrical Characteristics of Schottky Barriers for Amorphous Materials

    NASA Astrophysics Data System (ADS)

    Gupta, H. M.

    1997-12-01

    In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single energy level and (iii) energetically distributed bulk impurity states. We also consider a thin oxide layer (10 Å) between metal and semiconductor. We develop current versus applied potential characteristics considering the variation of the Fermi level very close to contact inside the semiconductor and decrease in barrier height due to the image force effect as well as potential fall on the oxide layer. Finally, we discuss the importance of each parameter, i.e. surface states, distributed impurity states, doping impurity states, thickness of oxide layer etc. on the log I versus applied potential characteristics. The present theory is also applicable for intimate contact, i.e. metal-semiconductor contact, crystalline material structures or for Schottky barriers in insulators or polymers. Dans cet article nous proposons une théorie géneralisée pour les charactéristiques éléctriques de barrière Schottky en semiconducteurs amorphes (ou isolants), tout en considérant: (i) des états de surface, (ii) des états d'impuretés dopées dans un seul niveau d'énergie, (iii) des états d'impuretés massives distribuées en énergie. Nous considérons aussi une fine couche d'oxide (10 Å) entre le métal et le semiconducteur. Nous développons les charactéristiques du courrant versus potentiel appliquée tout en considérant des variations du niveau de Fermi très proche du contact à l'intérieur du semiconducteur et une décroissance de l'hauteur de la barrière dûe aux effects de la force d'image ainsi qu'au chute de potentiel dans la couche d'oxide. Finalement nous discutons l'importance de chaque paramètre, i.e. états de surface, états d'impuretés distribuées, états d'impuretés dopées, épaisseur de la couche d'oxide, etc. sur les charact

  13. Semiconductor optical fibres for infrared applications: A review

    NASA Astrophysics Data System (ADS)

    Peacock, Anna C.; Healy, Noel

    2016-10-01

    Over the last decade a new class of optical fibre has emerged that incorporates semiconductor materials within the core. These fibres are rich in optoelectronic functionality and offer extended transmission bands across the infrared spectral region so that their application potential is vast. Various fabrication methods have been developed to produce fibres with a range of unary and compound semiconductor core materials, which can be either amorphous or crystalline in form. This review discusses the main fabrication procedures and the infrared optical properties of the semiconductor fibres that have been fabricated to date, then takes a look at the future prospects of this exciting new technology.

  14. Structural Amorphous Steels

    NASA Astrophysics Data System (ADS)

    Lu, Z. P.; Liu, C. T.; Thompson, J. R.; Porter, W. D.

    2004-06-01

    Recent advancement in bulk metallic glasses, whose properties are usually superior to their crystalline counterparts, has stimulated great interest in fabricating bulk amorphous steels. While a great deal of effort has been devoted to this field, the fabrication of structural amorphous steels with large cross sections has remained an alchemist’s dream because of the limited glass-forming ability (GFA) of these materials. Here we report the discovery of structural amorphous steels that can be cast into glasses with large cross-section sizes using conventional drop-casting methods. These new steels showed interesting physical, magnetic, and mechanical properties, along with high thermal stability. The underlying mechanisms for the superior GFA of these materials are discussed.

  15. Semiconductor Chemical Reactor Engineering and Photovoltaic Unit Operations.

    ERIC Educational Resources Information Center

    Russell, T. W. F.

    1985-01-01

    Discusses the nature of semiconductor chemical reactor engineering, illustrating the application of this engineering with research in physical vapor deposition of cadmium sulfide at both the laboratory and unit operations scale and chemical vapor deposition of amorphous silicon at the laboratory scale. (JN)

  16. Amorphous silicon photovoltaic devices

    DOEpatents

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  17. Structural Properties of Amorphous Semiconductors by Mossbauer Spectroscopy

    DTIC Science & Technology

    1974-12-31

    distinguished from each other by this technique. The line shapes reflect the dispersion of the crystalline field. MÖssbauer studies oi 125Te , which...deposited. The evaporation source consisted oi tellurium powder enriched to 50’,’ 125Te (by mixing t’O^ enriched powder with natural tellurium powder... 125Te In ^-TeO. (6), and Sb in Cu , all of which have been reported to give substantial improvements in one or more of the important

  18. The International Conference on Amorphous and Liquid Semiconductors (9th).

    DTIC Science & Technology

    1979-12-11

    loop effective action of a constant gluon field can be expressed in terms of the experimentally determinable A,.,• In the following chapter, the...regularization and Schwinger’s proper time method. The renormalization mass parameters appearing in the two treatments can then be related and the exact one

  19. Polaronic trapping in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Raebiger, Hannes

    2012-02-01

    GaN doped with iron is an interesting candidate material for magnetic semiconductors, as p-d coupling between the localized Fe-d and extended N-p hole states is expected to facilitate long-range ferromagnetic alignment of the Fe spins [1]. This picture of extended states in GaN:Fe, however, falls apart due to a polaronic localization of the hole carriers nearby the Fe impurities. To elucidate the carrier localization in GaN:Fe and related iron doped III-V semiconductors, I present a systematic study using self-interaction corrected density-functional calculations [2]. These calculations predict three distinct scenarios. (i) Some systems do sustain extended host-like hole states, (ii) some exhibit polaronic trapping, (iii) and some exhibit carrier trapping at Fe-d orbitals. These behaviors are described in detail to give an insight as to how to distinguish them experimentally. I thank T. Fujita, C. Echeverria-Arrondo, and A. Ayuela for their collaboration.[4pt] [1] T. Dietl et al, Science, 287, 1019 (2000).[0pt] [2] S. Lany and A. Zunger, Phys. Rev. B, 80, 085202 (2009).

  20. Impurity-defect complexes in hydrogenated amorphous silicon

    SciTech Connect

    Yang, L.H. ); Fong, C.Y. . Dept. of Physics); Nichols, C.S. . Dept. of Materials Science and Engineering)

    1990-11-01

    The two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H) -- a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping -- have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using first-principles self-consistent pseudopotential calculation in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results, we have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second neighbor position to a dangling bond defect. We demonstrate that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H. 16 refs., 2 figs., 1 tab.