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Sample records for amorphous silicon flat-panel

  1. Calibration of an amorphous-silicon flat panel portal imager for exit-beam dosimetry

    SciTech Connect

    Chen, Josephine; Chuang, Cynthia F.; Morin, Olivier; Aubin, Michele; Pouliot, Jean

    2006-03-15

    Amorphous-silicon flat panel detectors are currently used to acquire digital portal images with excellent image quality for patient alignment before external beam radiation therapy. As a first step towards interpreting portal images acquired during treatment in terms of the actual dose delivered to the patient, a calibration method is developed to convert flat panel portal images to the equivalent water dose deposited in the detector plane and at a depth of 1.5 cm. The method is based on empirical convolution models of dose deposition in the flat panel detector and in water. A series of calibration experiments comparing the response of the flat panel imager and ion chamber measurements of dose in water determines the model parameters. Kernels derived from field size measurements account for the differences in the production and detection of scattered radiation in the two systems. The dissimilar response as a function of beam energy spectrum is characterized from measurements performed at various off-axis positions and for increasing attenuator thickness in the beam. The flat panel pixel inhomogeneity is corrected by comparing a large open field image with profiles measured in water. To verify the accuracy of the calibration method, calibrated flat panel profiles were compared with measured dose profiles for fields delivered through solid water slabs, a solid water phantom containing an air cavity, and an anthropomorphic head phantom. Open rectangular fields of various sizes and locations as well as a multileaf collimator-shaped field were delivered. For all but the smallest field centered about the central axis, the calibrated flat panel profiles matched the measured dose profiles with little or no systematic deviation and approximately 3% (two standard deviations) accuracy for the in-field region. The calibrated flat panel profiles for fields located off the central axis showed a small -1.7% systematic deviation from the measured profiles for the in-field region

  2. High-energy and thermal-neutron imaging and modeling with an amorphous silicon flat-panel detector.

    PubMed

    Claytor, Thomas N; Taddeucci, Terry N; Hills, Charles R; Summa, Deborah A; Davis, Anthony W; McDonald, Thomas E; Schwab, Mark J

    2004-10-01

    The Los Alamos Neutron Science Center (LANSCE) operates two spallation neutron sources dedicated to research in materials science, condensed-matter physics, and fundamental and applied nuclear physics. Prior to 1995, all thermal neutron radiography at Los Alamos was done on a beam port attached to the Omega West reactor, a small 8MW research reactor used primarily for radioisotope production and prompt and delayed neutron activation analysis. After the closure of this facility, two largely independent radiography development efforts were begun at LANSCE using moderated cold and thermal neutrons from the Target-1 source and high-energy neutrons from the Target-4 source. Investigations with cold and thermal neutrons employed a neutron converter and film, a scintillation screen and CCD camera system, and a new high-resolution amorphous silicon (a-Si) flat-panel detector system. Recent work with high-energy neutrons (En > 1 MeV) has involved storage-phosphor image plates. Some comparison high-energy images were obtained with both image plates and the a-Si panel and showed equivalent image quality for approximately equal exposure times. PMID:15246402

  3. Solid-state flat panel imager with avalanche amorphous selenium

    NASA Astrophysics Data System (ADS)

    Scheuermann, James R.; Howansky, Adrian; Goldan, Amir H.; Tousignant, Olivier; Levéille, Sébastien; Tanioka, K.; Zhao, Wei

    2016-03-01

    Active matrix flat panel imagers (AMFPI) have become the dominant detector technology for digital radiography and fluoroscopy. For low dose imaging, electronic noise from the amorphous silicon thin film transistor (TFT) array degrades imaging performance. We have fabricated the first prototype solid-state AMFPI using a uniform layer of avalanche amorphous selenium (a-Se) photoconductor to amplify the signal to eliminate the effect of electronic noise. We have previously developed a large area solid-state avalanche a-Se sensor structure referred to as High Gain Avalanche Rushing Photoconductor (HARP) capable of achieving gains of 75. In this work we successfully deposited this HARP structure onto a 24 x 30 cm2 TFT array with a pixel pitch of 85 μm. An electric field (ESe) up to 105 Vμm-1 was applied across the a-Se layer without breakdown. Using the HARP layer as a direct detector, an X-ray avalanche gain of 15 +/- 3 was achieved at ESe = 105 Vμm-1. In indirect mode with a 150 μm thick structured CsI scintillator, an optical gain of 76 +/- 5 was measured at ESe = 105 Vμm-1. Image quality at low dose increases with the avalanche gain until the electronic noise is overcome at a constant exposure level of 0.76 mR. We demonstrate the success of a solid-state HARP X-ray imager as well as the largest active area HARP sensor to date.

  4. Scan equalization digital radiography (SEDR) implemented with an amorphous Selenium flat-panel detector: initial experience

    PubMed Central

    Liu, Xinming; Lai, Chao-Jen; Chen, Lingyun; Han, Tao; Zhong, Yuncheng; Shen, Youtao; Wang, Tianpeng; Shaw, Chris C.

    2010-01-01

    It is well recognized in projection radiography that low-contrast detectability suffered in heavily attenuating regions due to excessively low x-ray fluence to the image receptor and higher noise levels. Exposure equalization can improve image quality by increasing the x-ray exposure to heavily attenuating regions, resulting in a more uniform distribution of exposure to the detector. Image quality is also expected to be improved by using the slot-scan geometry to reject scattered radiation effectively without degrading primary x-rays. This paper describes the design of prototype scan equalization digital radiography (SEDR) system implemented with an amorphous silicon (a-Si) thin-film transistor (TFT) array based flat-panel detector. With this system, the slot-scan geometry with the alternate line erasure and readout (ALER) technique was used to achieve scatter rejection. A seven-segment beam height modulator assembly was mounted onto the fore-collimator to regulate exposure regionally for chest radiography. The beam modulator assembly, consisting of micro linear motors, lead screw cartridge with lead beam blocks attached, position feedback sensors, and motor driver circuitry, has been tested and found to have an acceptable response for exposure equalization in chest radiography. An anthropomorphic chest phantom was imaged in the posterior-anterior (PA) view under clinical conditions. Scatter component, primary x-rays, scatter-to-primary ratios (SPRs), and primary signal-to-noise ratios (PSNRs) were measured in the SEDR images to evaluate the rejection and redistribution of scattered radiation, and compared with those for conventional full-field imaging with and without anti-scatter grid methods. SPR reduction ratios (SPRRRs, defined as the differences between the non-grid full-field SPRs and the reduced SPRs divided by the former) yielded approximately 59% for the full-field imaging with grid and 82% for SEDR technique in the lungs; and 77% for the full

  5. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

    PubMed Central

    Kasap, Safa; Frey, Joel B.; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S.; Rowlands, John A.

    2011-01-01

    In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been

  6. Electrical characterization of thermally and mechanically exfoliated silicon films for flat panel display applications

    NASA Astrophysics Data System (ADS)

    Lu, Felix Paul

    For the next generation of flat panel displays (FPDs), higher resolutions and sharp, full motion video are expected. To meet these requirements, high quality semiconductor material on glass substrates are a desirable way to fabricate the thin film transistors (TFTs) needed to drive the pixels and to quickly and precisely control the currents. Single crystal silicon films can be exfoliated onto Corning I737F glass substrates using ion-cutting techniques. Because the ion-cutting technique requires ion implantation through the film material, the electrical properties of the exfoliated film have to be examined to understand the behavior as it goes through temperature cycling inherent in the TFT fabrication process. After the film exfoliation, Hall effect, hot probe and four point probe measurements are used along with layer by layer etching to get a picture of the carrier depth distribution. The electrical properties of mechanically exfoliated and thermally exfoliated films are compared and discussed in the context of using these for MOSFETs. Finally, p-MOSFETs are fabricated and the transistor parameters such as leakage current, subthreshold slope, on/off current ratio and mobility compare and contrasted with MOSFETs made from bulk silicon. The mechanically exfoliated films show superior performance with respect to the p-MOSFET off-state, drain to source leakage current compared to the thermally exfoliated films. This difference is attributed to the lower temperature the mechanically exfoliated film is subjected to even before film delamination. The temperature difference of the exfoliation temperatures is responsible for a higher density of oxide precipitates in the thermally exfoliated film which leads to higher leakage currents.

  7. Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology and application to flat-panel displays

    NASA Astrophysics Data System (ADS)

    Meng, Zhiguo

    High quality flat-panel displays (FPD) typically use active-matrix (AM) addressing, with the optical state of each pixel controlled by one or more active devices such as amorphous silicon (a-Si) thin film transistors (TFT). The successful examples are portable computer and liquid-crystal television (LC-TV). A high level of system on panel (SoP) electronic integration is required for versatile and compact systems. Meanwhile, many self-emitting display technologies are developing fast, active matrix for self-emitting display is typically current driven. The a-Si TFTs suffer from limited current driving capability, polycrystalline silicon (poly-Si) device technology is required. A new technology employing metal-induced unilaterally crystallization (MIUC) is presently reported. The device characteristics are obviously better than those in rapid-thermal annealed (RTA) and solid-phase crystallization (SPC) TFTs and the fabrication equipment is much cheaper than excimer laser crystallization (ELC) technology. The field effect mobility (muFE) of p- and n-channel MIUC TFTs is about 100cm2/Vs. Ion/I off is more than seven orders. Gate-induced leakage current in LT-MIUC poly-Si TFTs has been reduced by crystallization before heavy junction implantation to improve material quality and incorporating a gate-modulated lightly-doped drain (gamo-LDD) structure to reduce the electric field near the drain/channel junction region. At the same time, recrystallized (RC) MIUC TFT was researched with device characteristics improved. The 6.6cm 120 x 160 active matrix for OLED display is fabricated using LT-MIUC TFT technology on glass substrate. This display has the advantages of self-emitting, large intrinsic view angle and very fast response. At the same time, 6.6cm 120X160 AM-reflective twist nematic (RTN) display is fabricated using RC-MIUC TFT technology. This display is capable of producing 16 grade levels, 10:1 contrast and video image. The SOP display for AM-OLED were designed

  8. Amorphous Diamond Flat Panel Displays - Final Report of ER-LTR CRADA project with SI Diamond Technology

    SciTech Connect

    Ager III, Joel W.

    1998-05-08

    The objective of this project was to determine why diamond-based films are unusually efficient electron emitters (field emission cathodes) at room temperature. Efficient cathodes based on diamond are being developed by SI Diamond Technology (SIDT) as components for bright, sunlight-readable, flat panel displays. When the project started, it was known that only a small fraction (<1%) of the cathode area is active in electron emission and that the emission sites themselves are sub-micron in size. The critical challenge of this project was to develop new microcharacterization methods capable of examining known emission sites. The research team used a combination of cathode emission imaging (developed at SIDT), micro-Raman spectroscopy (LBNL), and electron microscopy and spectroscopy (National Center for Electron Microscopy, LBNL) to examine the properties of known emission sites. The most significant accomplishment of the project was the development at LBNL of a very high resolution scanning probe that, for the first time, measured simultaneously the topography and electrical characteristics of single emission sites. The increased understanding of the emission mechanism helped SIDT to develop a new cathode material,''nano-diamond,'' which they have incorporated into their Field Emission Picture Element (FEPix) product. SIDT is developing large-format flat panel displays based on these picture elements that will be brighter and more efficient than existing outdoor displays such as Jumbotrons. The energy saving that will be realized if field emission displays are introduced commercially is in line with the energy conservation mission of DOE. The unique characterization tools developed in this project (particularly the new scanning microscopy method) are being used in ongoing BES-funded basic research.

  9. Medical imaging applications of amorphous silicon

    SciTech Connect

    Mireshghi, A.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.K.; Perez-Mendez, V.

    1994-07-01

    Two dimensional hydrogenated amorphous silicon (a-Si:H) pixel arrays are good candidates as flat-panel imagers for applications in medical imaging. Various performance characteristics of these imagers are reviewed and compared with currently used equipments. An important component in the a-Si:H imager is the scintillator screen. A new approach for fabrication of high resolution CsI(Tl) scintillator layers, appropriate for coupling to a-Si:H arrays, are presented. For nuclear medicine applications, a new a-Si:H based gamma camera is introduced and Monte Carlo simulation is used to evaluate its performance.

  10. Quantitative comparison using generalized relative object detectability (G-ROD) metrics of an amorphous selenium detector with high resolution microangiographic fluoroscopes (MAF) and standard flat panel detectors (FPD)

    NASA Astrophysics Data System (ADS)

    Russ, M.; Shankar, A.; Jain, A.; Setlur Nagesh, S. V.; Ionita, C. N.; Scott, C.; Karim, K. S.; Bednarek, D. R.; Rudin, S.

    2016-03-01

    A novel amorphous selenium (a-Se) direct detector with CMOS readout has been designed, and relative detector performance investigated. The detector features include a 25μm pixel pitch, and 1000μm thick a-Se layer operating at 10V/μm bias field. A simulated detector DQE was determined, and used in comparative calculations of the Relative Object Detectability (ROD) family of prewhitening matched-filter (PWMF) observer and non-pre-whitening matched filter (NPWMF) observer model metrics to gauge a-Se detector performance against existing high resolution micro-angiographic fluoroscopic (MAF) detectors and a standard flat panel detector (FPD). The PWMF-ROD or ROD metric compares two x-ray imaging detectors in their relative abilities in imaging a given object by taking the integral over spatial frequencies of the Fourier transform of the detector DQE weighted by an object function, divided by the comparable integral for a different detector. The generalized-ROD (G-ROD) metric incorporates clinically relevant parameters (focal- spot size, magnification, and scatter) to show the degradation in imaging performance for detectors that are part of an imaging chain. Preliminary ROD calculations using simulated spheres as the object predicted superior imaging performance by the a-Se detector as compared to existing detectors. New PWMF-G-ROD and NPWMF-G-ROD results still indicate better performance by the a-Se detector in an imaging chain over all sphere sizes for various focal spot sizes and magnifications, although a-Se performance advantages were degraded by focal spot blurring. Nevertheless, the a-Se technology has great potential to provide break- through abilities such as visualization of fine details including of neuro-vascular perforator vessels and of small vascular devices.

  11. Amorphous silicon x-ray image sensor

    NASA Astrophysics Data System (ADS)

    Chabbal, Jean; Chaussat, Christophe; Ducourant, Thierry; Fritsch, Lionel; Michailos, Jean; Spinnler, Vincent; Vieux, Gerard; Arques, Marc; Hahm, Gerhard; Hoheisel, Martin; Horbaschek, Heinz; Schulz, Reiner F.; Spahn, Martin F.

    1996-04-01

    The design and the performance of a 20 cm by 20 cm flat panel x-ray detector for digital radiography and fluoroscopy is described: Thin film amorphous silicon (aSi) technology has been used to build a 1024 by 1024 photodetector matrix, each pixel including both a photodiode and a switching diode; the pixel size is 196 by 196 micrometers2. A high resolution and high absorption CsI(Tl) scintillator layer covers the top of the photodetector matrix in order to provide for x ray to light conversion. For low electronic noise and 30 fr/s operating rate we developed a custom design charge readout integrated circuit. The detector delivers a 12 bit digital output. The image quality, signal to noise ratio, and DQE are presented and discussed. The flat panel detector provides a MTF in excess of 30% at 2 lp/mm and a high contrast ratio without any distortion on the whole imaging area. The x-ray absorption is 70% for 50 KeV photons. The readout amplifier is optimized to reduce the electronic noise down to 1000 e-. This low noise level, combined with high sensitivity (1150 e-/incident x-ray quantum) provides the capability for fluoroscopic applications. The digital flat panel detector has been integrated in a C-arm system for cardiology and has been used on a regular basis in a European hospital since February 1995. The results are discussed for several operating modes: radiography and fluoroscopy. Conclusions on present detector performances, as well as further improvements, are presented.

  12. Hydrogen in amorphous silicon

    SciTech Connect

    Peercy, P. S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH/sub 1/) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon.

  13. TU-F-18C-02: Increasing Amorphous Selenium Thickness in Direct Conversion Flat-Panel Imagers for Contrast-Enhanced Dual-Energy Breast Imaging

    SciTech Connect

    Scaduto, DA; Hu, Y-H; Zhao, W

    2014-06-15

    Purpose: Contrast-enhanced (CE) breast imaging using iodinated contrast agents requires imaging with x-ray spectra at energies greater than those used in mammography. Optimizing amorphous selenium (a-Se) flat panel imagers (FPI) for this higher energy range may increase lesion conspicuity. Methods: We compare imaging performance of a conventional FPI with 200 μm a-Se conversion layer to a prototype FPI with 300 μm a-Se layer. Both detectors are evaluated in a Siemens MAMMOMAT Inspiration prototype digital breast tomosynthesis (DBT) system using low-energy (W/Rh 28 kVp) and high-energy (W/Cu 49 kVp) x-ray spectra. Detectability of iodinated lesions in dual-energy images is evaluated using an iodine contrast phantom. Effects of beam obliquity are investigated in projection and reconstructed images using different reconstruction methods. The ideal observer signal-to-noise ratio is used as a figure-of-merit to predict the optimal a-Se thickness for CE lesion detectability without compromising conventional full-field digital mammography (FFDM) and DBT performance. Results: Increasing a-Se thickness from 200 μm to 300 μm preserves imaging performance at typical mammographic energies (e.g. W/Rh 28 kVp), and improves the detective quantum efficiency (DQE) for high energy (W/Cu 49 kVp) by 30%. While the more penetrating high-energy x-ray photons increase geometric blur due to beam obliquity in the FPI with thicker a-Se layer, the effect on lesion detectability in FBP reconstructions is negligible due to the reconstruction filters employed. Ideal observer SNR for CE objects shows improvements in in-plane detectability with increasing a-Se thicknesses, though small lesion detectability begins to degrade in oblique projections for a-Se thickness above 500 μm. Conclusion: Increasing a-Se thickness in direct conversion FPI from 200 μm to 300 μm improves lesion detectability in CE breast imaging with virtually no cost to conventional FFDM and DBT. This work was partially

  14. Microgap flat panel display

    DOEpatents

    Wuest, Craig R.

    1998-01-01

    A microgap flat panel display which includes a thin gas-filled display tube that utilizes switched X-Y "pixel" strips to trigger electron avalanches and activate a phosphor at a given location on a display screen. The panel utilizes the principal of electron multiplication in a gas subjected to a high electric field to provide sufficient electron current to activate standard luminescent phosphors located on an anode. The X-Y conductive strips of a few micron widths may for example, be deposited on opposite sides of a thin insulating substrate, or on one side of the adjacent substrates and function as a cathode. The X-Y strips are separated from the anode by a gap filled with a suitable gas. Electrical bias is selectively switched onto X and Y strips to activate a "pixel" in the region where these strips overlap. A small amount of a long-lived radioisotope is used to initiate an electron avalanche in the overlap region when bias is applied. The avalanche travels through the gas filled gap and activates a luminescent phosphor of a selected color. The bias is adjusted to give a proportional electron multiplication to control brightness for given pixel.

  15. Microgap flat panel display

    DOEpatents

    Wuest, C.R.

    1998-12-08

    A microgap flat panel display is disclosed which includes a thin gas-filled display tube that utilizes switched X-Y ``pixel`` strips to trigger electron avalanches and activate a phosphor at a given location on a display screen. The panel utilizes the principal of electron multiplication in a gas subjected to a high electric field to provide sufficient electron current to activate standard luminescent phosphors located on an anode. The X-Y conductive strips of a few micron widths may for example, be deposited on opposite sides of a thin insulating substrate, or on one side of the adjacent substrates and function as a cathode. The X-Y strips are separated from the anode by a gap filled with a suitable gas. Electrical bias is selectively switched onto X and Y strips to activate a ``pixel`` in the region where these strips overlap. A small amount of a long-lived radioisotope is used to initiate an electron avalanche in the overlap region when bias is applied. The avalanche travels through the gas filled gap and activates a luminescent phosphor of a selected color. The bias is adjusted to give a proportional electron multiplication to control brightness for given pixel. 6 figs.

  16. Investigations of a flat-panel detector for quality assurance measurements in ion beam therapy.

    PubMed

    Hartmann, Bernadette; Telsemeyer, Julia; Huber, Lucas; Ackermann, Benjamin; Jäkel, Oliver; Martišíková, Mária

    2012-01-01

    Increased accuracy in radiation delivery to a patient provided by scanning particle beams leads to high demands on quality assurance (QA). To meet the requirements, an extensive quality assurance programme has been implemented at the Heidelberg Ion Beam Therapy Center. Currently, high-resolution radiographic films are used for beam spot position measurements and homogeneity measurements for scanned fields. However, given that using this film type is time and equipment demanding, considerations have been made to replace the radiographic films in QA by another appropriate device. In this study, the suitability of the flat-panel detector RID 256 L based on amorphous silicon was investigated as an alternative method. The currently used radiographic films were taken as a reference. Investigations were carried out for proton and carbon ion beams. The detectors were irradiated simultaneously to allow for a direct comparison. The beam parameters (e.g. energy, focus, position) currently used in the daily QA procedures were applied. Evaluation of the measurements was performed using newly implemented automatic routines. The results for the flat-panel detector were compared to the standard radiographic films. Additionally, a field with intentionally decreased homogeneity was applied to test the detector's sensitivities toward possible incorrect scan parameters. For the beam position analyses, the flat-panel detector results showed good agreement with radiographic films. For both detector types, deviations between measured and planned spot distances were found to be below 1% (1 mm). In homogeneously irradiated fields, the flat-panel detector showed a better dose response homogeneity than the currently used radiographic film. Furthermore, the flat-panel detector is sensitive to field irregularities. The flat-panel detector was found to be an adequate replacement for the radiographic film in QA measurements. In addition, it saves time and equipment because no post

  17. Amorphous silicon photovoltaic devices

    DOEpatents

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  18. Amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  19. Amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  20. Amorphous Silicon: Flexible Backplane and Display Application

    NASA Astrophysics Data System (ADS)

    Sarma, Kalluri R.

    Advances in the science and technology of hydrogenated amorphous silicon (a-Si:H, also referred to as a-Si) and the associated devices including thin-film transistors (TFT) during the past three decades have had a profound impact on the development and commercialization of major applications such as thin-film solar cells, digital image scanners and X-ray imagers and active matrix liquid crystal displays (AMLCDs). Particularly, during approximately the past 15 years, a-Si TFT-based flat panel AMLCDs have been a huge commercial success. a-Si TFT-LCD has enabled the note book PCs, and is now rapidly replacing the venerable CRT in the desktop monitor and home TV applications. a-Si TFT-LCD is now the dominant technology in use for applications ranging from small displays such as in mobile phones to large displays such as in home TV, as well-specialized applications such as industrial and avionics displays.

  1. Amorphous silicon ionizing particle detectors

    DOEpatents

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  2. Amorphous silicon ionizing particle detectors

    DOEpatents

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  3. Flat panel planar optic display

    SciTech Connect

    Veligdan, J.T.

    1994-11-01

    A prototype 10 inch flat panel Planar Optic Display, (POD), screen has been constructed and tested. This display screen is comprised of hundreds of planar optic class sheets bonded together with a cladding layer between each sheet where each glass sheet represents a vertical line of resolution. The display is 9 inches wide by 5 inches high and approximately 1 inch thick. A 3 milliwatt HeNe laser is used as the illumination source and a vector scanning technique is employed.

  4. Compensated amorphous silicon solar cell

    DOEpatents

    Devaud, Genevieve

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  5. Flat-panel electronic displays: a triumph of physics, chemistry and engineering.

    PubMed

    Hilsum, Cyril

    2010-03-13

    This paper describes the history and science behind the development of modern flat-panel displays, and assesses future trends. Electronic displays are an important feature of modern life. For many years the cathode ray tube, an engineering marvel, was universal, but its shape was cumbersome and its operating voltage too high. The need for a flat-panel display, working at a low voltage, became imperative, and much research has been applied to this need. Any versatile flat-panel display will exploit an electro-optical effect, a transparent conductor and an addressing system to deliver data locally. The first need is to convert an electrical signal into a visible change. Two methods are available, the first giving emission of light, the second modulating ambient illumination. The most useful light-emitting media are semiconductors, historically exploiting III-V or II-VI compounds, but more recently organic or polymer semiconductors. Another possible effect uses gas plasma discharges. The modulating, or subtractive, effects that have been studied include liquid crystals, electrophoresis, electrowetting and electrochromism. A transparent conductor makes it possible to apply a voltage to an extended area while observing the results. The design is a compromise, since the free electrons that carry current also absorb light. The first materials used were metals, but some semiconductors, when heavily doped, give a better balance, with high transmission for a low resistance. Delivering data unambiguously to a million or so picture elements across the display area is no easy task. The preferred solution is an amorphous silicon thin-film transistor deposited at each cross-point in an X-Y matrix. Success in these endeavours has led to many applications for flat-panel displays, including television, flexible displays, electronic paper, electronic books and advertising signs.

  6. Flat-panel electronic displays: a triumph of physics, chemistry and engineering

    PubMed Central

    Hilsum, Cyril

    2010-01-01

    This paper describes the history and science behind the development of modern flat-panel displays, and assesses future trends. Electronic displays are an important feature of modern life. For many years the cathode ray tube, an engineering marvel, was universal, but its shape was cumbersome and its operating voltage too high. The need for a flat-panel display, working at a low voltage, became imperative, and much research has been applied to this need. Any versatile flat-panel display will exploit an electro-optical effect, a transparent conductor and an addressing system to deliver data locally. The first need is to convert an electrical signal into a visible change. Two methods are available, the first giving emission of light, the second modulating ambient illumination. The most useful light-emitting media are semiconductors, historically exploiting III–V or II–VI compounds, but more recently organic or polymer semiconductors. Another possible effect uses gas plasma discharges. The modulating, or subtractive, effects that have been studied include liquid crystals, electrophoresis, electrowetting and electrochromism. A transparent conductor makes it possible to apply a voltage to an extended area while observing the results. The design is a compromise, since the free electrons that carry current also absorb light. The first materials used were metals, but some semiconductors, when heavily doped, give a better balance, with high transmission for a low resistance. Delivering data unambiguously to a million or so picture elements across the display area is no easy task. The preferred solution is an amorphous silicon thin-film transistor deposited at each cross-point in an X–Y matrix. Success in these endeavours has led to many applications for flat-panel displays, including television, flexible displays, electronic paper, electronic books and advertising signs. PMID:20123746

  7. Low-power scan driver embedded with level shifter using depletion-mode amorphous indium-gallium-zinc-oxide thin-film transistors for high-resolution flat-panel displays

    NASA Astrophysics Data System (ADS)

    Lee, Chang-Hee; Kwon, Oh-Kyong

    2014-01-01

    A low-power scan driver embedded with a level shifter using depletion-mode amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) is proposed for high-resolution flat-panel displays (FPDs). In order to achieve low power consumption, the scan driver uses clock signals with a reduced voltage swing. Furthermore, the level shifter is implemented without using a diode-connected TFT. This scan driver is simulated at an output voltage swing of 30 V and an operating frequency (fop) of 153.6 kHz, which satisfy the driving conditions for 10-in. wide quadruple extended graphics array (WQXGA, 1600 × 2560) FPDs with a frame frequency of 60 Hz. The simulation results of the proposed scan driver demonstrate the successful operation even at a threshold voltage shift (ΔVth) of -2.0 V. The power consumption of the proposed scan driver per ten stages is 0.41 mW, which is 80.75% less than that reported in a previous work.

  8. Laser illuminated flat panel display

    SciTech Connect

    Veligdan, J.T.

    1995-12-31

    A 10 inch laser illuminated flat panel Planar Optic Display (POD) screen has been constructed and tested. This POD screen technology is an entirely new concept in display technology. Although the initial display is flat and made of glass, this technology lends itself to applications where a plastic display might be wrapped around the viewer. The display screen is comprised of hundreds of planar optical waveguides where each glass waveguide represents a vertical line of resolution. A black cladding layer, having a lower index of refraction, is placed between each waveguide layer. Since the cladding makes the screen surface black, the contrast is high. The prototype display is 9 inches wide by 5 inches high and approximately I inch thick. A 3 milliwatt HeNe laser is used as the illumination source and a vector scanning technique is employed.

  9. Plasma technology and its use in flat panel digital radiography.

    PubMed

    Zur, Albert

    2010-01-01

    Plasma DR technology is used to produce a cost effective flat panel x-ray detector that acquires digital x-ray images with excellent diagnostic quality. The detector is radiation hard and permanently zero defect, with a full virtual pixel matrix that has no dead lines, pixels, or dead pixel clusters. The technology also allows the full potential of large area amorphous Selenium imaging to finally be realized (see Figure 4).

  10. Tandem junction amorphous silicon solar cells

    DOEpatents

    Hanak, Joseph J.

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  11. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

    1996-04-16

    A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

  12. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

    1996-01-01

    A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

  13. Narrow band gap amorphous silicon semiconductors

    DOEpatents

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  14. Combined load test apparatus for flat panels

    NASA Astrophysics Data System (ADS)

    McWithey, Robert R.; Martin, Carl J., Jr.; Cerro, Jeffrey A.

    1992-04-01

    Future hypersonic aircraft such as the National Aero-Space Plane and a high speed civil transport will require the design and use of efficient, highly-loaded, flat structural panels to achieve mission requirements. These panels will be subjected to severe combinations of in-plane mechanical distributed loads (i.e., normal loads in two perpendicular directions plus a shear load), in addition to pressure and thermal loads. A testing apparatus is provided for applying uniform combined in-plane stresses to a flat panel containing an interior test area. Actuators cause two sets of load rods to apply loads to the edge of the flat panel. The first set applies loads which are perpendicular to and independent of the loads applied by the second set. The loads are applied according to a cosine load distribution to obtain a uniform stress field within the test area. The flat panel may be rotated with respect to the applied loads to obtain a wide range of combined stresses in the test area. Movement outside the plane of the flat panel may be selectively prevented by connecting the flat panel to a restraining disk by support rods. The support rods then define the test area. A thermal load may be applied to one side of the flat panel and a pressure load may be applied to the other side. The novelty of this method is found in providing a testing apparatus which allows mechanical, thermal and pressure loads to be applied simultaneously to a flat panel for testing purposes.

  15. LOW SCATTER, HIGH KILOVOLT, A-SI FLAT PANEL X-RAY DETECTOR

    SciTech Connect

    Smith, Peter D.; Claytor, Thomas N.; Berry, Phillip C.; Hills, Charles R.; Keating, Scott C.; Phillips, David H.; Setoodeh, Shariar

    2009-03-03

    We have been using amorphous silicon (a-Si) flat panel detectors in high energy (>400 kV) cone beam computed tomography (CT) applications for a number of years. We have found that these detectors have a significant amount of internal scatter that degrades the accuracy of attenuation images. The scatter errors cause cupping and streaking artifacts that are practically indistinguishable from beam hardening artifacts. Residual artifacts remain after beam hardening correction and over correction increases noise in CT reconstructions. Another important limitation of existing detectors is that they have a high failure rate, especially when operating at megavolt x-ray energies even with a well collimated beam. Due to the limitations of the current detectors, we decided to design a detector specifically for high energies that has significantly reduced scatter. In collaboration with IMTEC, we have built a prototype amorphous silicon flat panel detector that has both improved imaging response and increased lifetime. LANL's contribution is the ''transparent panel concept''(patent pending), in which structures in the x-ray beam path are either eliminated or made as transparent to x-rays as practical (low atomic number and low areal density). This reduces scatter, makes attenuation measurements more accurate, improves the ability to make corrections for beam hardening, and increases signal to noise ratio in DR images and CT reconstructions. IMTEC's contribution is an improved shielding design that will increase the lifetime of the panel. Preliminary results showing the dramatic reduction in self scatter from the panel will be presented as well as the effect of this improvement on CT images.

  16. Low Scatter, High Kilovolt, A-Si Flat Panel X-Ray Detector

    NASA Astrophysics Data System (ADS)

    Smith, Peter D.; Claytor, Thomas N.; Berry, Phillip C.; Hills, Charles R.; Keating, Scott C.; Phillips, David H.; Setoodeh, Shariar

    2009-03-01

    We have been using amorphous silicon (a-Si) flat panel detectors in high energy (>400 kV) cone beam computed tomography (CT) applications for a number of years. We have found that these detectors have a significant amount of internal scatter that degrades the accuracy of attenuation images. The scatter errors cause cupping and streaking artifacts that are practically indistinguishable from beam hardening artifacts. Residual artifacts remain after beam hardening correction and over correction increases noise in CT reconstructions. Another important limitation of existing detectors is that they have a high failure rate, especially when operating at megavolt x-ray energies even with a well collimated beam. Due to the limitations of the current detectors, we decided to design a detector specifically for high energies that has significantly reduced scatter. In collaboration with IMTEC, we have built a prototype amorphous silicon flat panel detector that has both improved imaging response and increased lifetime. LANL's contribution is the "transparent panel concept" (patent pending), in which structures in the x-ray beam path are either eliminated or made as transparent to x-rays as practical (low atomic number and low areal density). This reduces scatter, makes attenuation measurements more accurate, improves the ability to make corrections for beam hardening, and increases signal to noise ratio in DR images and CT reconstructions. IMTEC's contribution is an improved shielding design that will increase the lifetime of the panel. Preliminary results showing the dramatic reduction in self scatter from the panel will be presented as well as the effect of this improvement on CT images.

  17. Amorphous silicon solar cell allowing infrared transmission

    DOEpatents

    Carlson, David E.

    1979-01-01

    An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

  18. Indirect flat-panel detector with avalanche gain

    NASA Astrophysics Data System (ADS)

    Zhao, Wei; Hunt, Dylan C.; Tanioka, Kenkichi; Rowlands, John A.

    2004-05-01

    A new concept - an indirect flat-panel detector with avalanche gain - for low dose x-ray imaging has been proposed. The detector consists of an amorphous selenium (a-Se) photoconductor optically coupled to a structured cesium iodide (CsI) scintillator. Under an electric field ESe, the a-Se is sensitive to light and converts the optical photons emitted from CsI into electronic signal. These signals can be stored and read out in the same fashion as in existing flat-panel detectors. When ESe is increased to > 90 V/μm, avalanche multiplication occurs. The avalanche gain ranges between 1-800 depending on ESe and the thickness of the a-Se layer dSe. The avalanche a-Se photoconductor is referred to as HARP (High-gain Avalanche Rushing amorphous Photoconductor). A cascaded linear system model for the proposed detector was developed in order to determine the optimal CsI properties and avalanche gain for different x-ray imaging applications. Our results showed that x-ray quantum noise limited performance can be achieved at the lowest exposure level necessary for fluoroscopy (0.1 μR) and mammography (0.1 mR) with a moderate avalanche gain of 20 (d = 1-2 μm). A laboratory test system using an existing HARP tube optically coupled (through a lens) to a CsI layer was built and the advantage of avalanche gain in overcoming electronic noise was demonstrated experimentally. One of the advantages of the avalanche gain is that it will permit the use of high resolution (HR) CsI (which due to its low light output has not previously been used in flat-panel detectors) to improve DQE at high spatial frequencies.

  19. Advantages of using flat-panel LCD for projection displays

    NASA Astrophysics Data System (ADS)

    Wu, Dean C.

    1995-04-01

    came from silicon wafer processing, they are limited to small sizes as in Integrated Circuits. Polysilicon needs relative high temperature for active matrix processing. The usual non-alkali LCD glass substrates can not withstand such high temperature. As a result, polysilicon is also limited to small sizes. However, they can be used in Projection Displays with enlargement for comfort viewing. It is our hope some of these flat panel LCD technologies will be developed into the high end Projection Displays such as HIgh Definition Television, Multimedia or Interactive Video Communication, Entertainment and Presentation Systems of the future.

  20. Compensated amorphous-silicon solar cell

    DOEpatents

    Devaud, G.

    1982-06-21

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  1. Method of producing hydrogenated amorphous silicon film

    DOEpatents

    Wiesmann, Harold J.

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

  2. Phosphors for flat panel emissive displays

    SciTech Connect

    Anderson, M.T.; Walko, R.J.; Phillips, M.L.F.

    1995-07-01

    An overview of emissive display technologies is presented. Display types briefly described include: cathode ray tubes (CRTs), field emission displays (FEDs), electroluminescent displays (ELDs), and plasma display panels (PDPs). The critical role of phosphors in further development of the latter three flat panel emissive display technologies is outlined. The need for stable, efficient red, green, and blue phosphors for RGB fall color displays is emphasized.

  3. Quantitative carbon ion beam radiography and tomography with a flat-panel detector.

    PubMed

    Telsemeyer, Julia; Jäkel, Oliver; Martišíková, Mária

    2012-12-01

    High dose gradients are inherent to ion beam therapy. This results in high sensitivity to discrepancies between planned and delivered dose distributions. Therefore an accurate knowledge of the ion stopping power of the traversed tissue is critical. One proposed method to ensure high quality dose deposition is to measure the stopping power by ion radiography. Although the idea of imaging with highly energetic ions is more than forty years old, there is a lack of simple detectors suitable for this purpose. In this study the performance of an amorphous silicon flat-panel detector, originally designed for photon imaging, was investigated for quantitative carbon ion radiography and tomography. The flat-panel detector was exploited to measure the water equivalent thickness (WET) and water equivalent path length (WEPL) of a phantom at the Heidelberg Ion-Beam Therapy Center (HIT). To do so, the ambiguous correlation of detector signal to particle energy was overcome by active or passive variation of carbon ion beam energy and measurement of the signal-to-beam energy correlation. The active method enables one to determine the WET of the imaged object with an uncertainty of 0.5 mm WET. For tomographic WEPL measurements the passive method was exploited resulting in an accuracy of 0.01 WEPL. The developed imaging technique presents a method to measure the two-dimensional maps of WET and WEPL of phantoms with a simple and commercially available detector. High spatial resolution of 0.8 × 0.8 mm(2) is given by the detector design. In the future this powerful tool will be used to evaluate the performance of the treatment planning algorithm by studying WET uncertainties.

  4. Electron tunnelling into amorphous germanium and silicon.

    NASA Technical Reports Server (NTRS)

    Smith, C. W.; Clark, A. H.

    1972-01-01

    Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

  5. Use and imaging performance of CMOS flat panel imager with LiF/ZnS(Ag) and Gadox scintillation screens for neutron radiography

    NASA Astrophysics Data System (ADS)

    Cha, B. K.; kim, J. Y.; Kim, T. J.; Sim, C.; Cho, G.; Lee, D. H.; Seo, C.-W.; Jeon, S.; Huh, Y.

    2011-01-01

    In digital neutron radiography system, a thermal neutron imaging detector based on neutron-sensitive scintillating screens with CMOS(complementary metal oxide semiconductor) flat panel imager is introduced for non-destructive testing (NDT) application. Recently, large area CMOS APS (active-pixel sensor) in conjunction with scintillation films has been widely used in many digital X-ray imaging applications. Instead of typical imaging detectors such as image plates, cooled-CCD cameras and amorphous silicon flat panel detectors in combination with scintillation screens, we tried to apply a scintillator-based CMOS APS to neutron imaging detection systems for high resolution neutron radiography. In this work, two major Gd2O2S:Tb and 6LiF/ZnS:Ag scintillation screens with various thickness were fabricated by a screen printing method. These neutron converter screens consist of a dispersion of Gd2O2S:Tb and 6LiF/ZnS:Ag scintillating particles in acrylic binder. These scintillating screens coupled-CMOS flat panel imager with 25x50mm2 active area and 48μm pixel pitch was used for neutron radiography. Thermal neutron flux with 6x106n/cm2/s was utilized at the NRF facility of HANARO in KAERI. The neutron imaging characterization of the used detector was investigated in terms of relative light output, linearity and spatial resolution in detail. The experimental results of scintillating screen-based CMOS flat panel detectors demonstrate possibility of high sensitive and high spatial resolution imaging in neutron radiography system.

  6. Cooling of hot electrons in amorphous silicon

    SciTech Connect

    Vanderhaghen, R.; Hulin, D.; Cuzeau, S.; White, J.O.

    1997-07-01

    Measurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data while an energy transfer independent of the temperature difference is not. This contrasts with the situation in crystalline silicon. The measured cooling rates are sufficient to explain the difficulty in observing avalanche effects in amorphous silicon.

  7. Atomic-scale disproportionation in amorphous silicon monoxide

    NASA Astrophysics Data System (ADS)

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-05-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material.

  8. Atomic-scale disproportionation in amorphous silicon monoxide.

    PubMed

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-05-13

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material.

  9. Atomic-scale disproportionation in amorphous silicon monoxide

    PubMed Central

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-01-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material. PMID:27172815

  10. Microhollow electrode discharge flat panel displays

    SciTech Connect

    Schoenbach, K.H.; Tessnow, T.; Peterkin, F.E.; Nunnally, W.C.

    1997-12-31

    Microhollow electrode discharges, discharges between thin metal foils with submillimeter gap and submillimeter holes in cathode and anode, show three distinct modes of operation: (a) at low currents the predischarge mode, a glow discharge between the outer faces of the hollow electrodes, (b) at higher current a phase with increased ionization due to ``pendulum`` electrons in the cathode hole, and (c) at even higher current an abnormal glow discharge between the edges of cathode and anode hole. A fourth discharge mode, the so-called partial discharge seems to occur at high gas pressure at pressure times hole diameter values exceeding 10 Torr cm. Experiments in a 0.2 mm diameter hollow electrode geometry with Xe and Ar at atmospheric pressure have shown that the discharges emit excimer radiation. Control of these discharges which have a sustaining voltage of several hundred volts allows their use in flat panel displays. A second mode of operation which allows one to form addressable flat panel displays is the predischarge mode. It could be shown that with a third electrode close to the cathode, but outside the anode-cathode gap, the intensity of the discharge could be linearly varied by varying the voltage at the third electrode in a range below 100 V. The predischarges have a resistive behavior (positive slope of current-voltage characteristics) which allows one to place them in parallel without individual ballast and without segmentation of anode and cathode. This has been demonstrated in a small device with nine addressable microhollow cathode discharges.

  11. Amorphous Silicon Based Neutron Detector

    SciTech Connect

    Xu, Liwei

    2004-12-12

    Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield using low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: · High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; · Various single-junction and double junction detector devices have been fabricated; · The detector devices fabricated have been systematically tested and analyzed. · Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies

  12. ELECTROLUMINESCENT MATERIAL FOR FLAT PANEL DISPLAY

    SciTech Connect

    Smith, D.B.

    2000-11-13

    The purpose of this Cooperative Research and Development Agreement (CRADA) was to develop a new-generation electroluminescent (EL) material for flat panel displays and related applications by using unique and complementary research capabilities at Oak Ridge National Laboratory and OSRAM Sylvania, Inc. The goal was to produce an EL material with a luminance 10 times greater than conventional EL phosphors. An EL material with this increased luminance would have immediate applications for flat panel display devices (e.g., backlighting for liquid-crystal diodes) and for EL lamp technology. OSRAM Sylvania proposed that increased EL phosphor luminance could be obtained by creating composite EL materials capable of alignment under an applied electric field and capable of concentrating the applied electric field. Oak Ridge National Laboratory used pulsed laser deposition as a method for making these composite EL materials. The materials were evaluated for electroluminescence at laboratory facilities at OSRAM Sylvania, Inc. Many composite structures were thus made and evaluated, and it was observed that a composite structure based on alternating layers of a ferroelectric and a phosphor yielded electroluminescence. An enabling step that was not initially proposed but was conceived during the cooperative effort was found to be crucial to the success of the composite structure. The CRADA period expired before we were able to make quantitative measurements of the luminance and efficiency of the composite EL material. Future cooperative work, outside the scope of the CRADA, will focus on making these measurements and will result in the production of a prototype composite EL device.

  13. Neutron irradiation induced amorphization of silicon carbide

    SciTech Connect

    Snead, L.L.; Hay, J.C.

    1998-09-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 {times} 10{sup 25} n/m{sup 2}. Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density ({minus}10.8%), elastic modulus as measured using a nanoindentation technique ({minus}45%), hardness as measured by nanoindentation ({minus}45%), and standard Vickers hardness ({minus}24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C.

  14. Pressure induced crystallization in amorphous silicon

    NASA Astrophysics Data System (ADS)

    Pandey, K. K.; Garg, Nandini; Shanavas, K. V.; Sharma, Surinder M.; Sikka, S. K.

    2011-06-01

    We have investigated the high pressure behavior of amorphous silicon (a-Si) using x-ray diffraction and Raman scattering techniques. Our experiments show that a-Si undergoes a polyamorphous transition from the low density amorphous to the high density amorphous phase, followed by pressure induced crystallization to the primitive hexagonal (ph) phase. On the release path, the sequence of observed phase transitions depends on whether the pressure is reduced slowly or rapidly. Using the results of our first principles calculations, pressure induced preferential crystallization to the ph phase is explained in terms of a thermodynamic model based on phenomenological random nucleation and the growth process.

  15. Inverted amorphous silicon solar cell utilizing cermet layers

    DOEpatents

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  16. Solid-state, flat-panel, digital radiography detectors and their physical imaging characteristics.

    PubMed

    Cowen, A R; Kengyelics, S M; Davies, A G

    2008-05-01

    Solid-state, digital radiography (DR) detectors, designed specifically for standard projection radiography, emerged just before the turn of the millennium. This new generation of digital image detector comprises a thin layer of x-ray absorptive material combined with an electronic active matrix array fabricated in a thin film of hydrogenated amorphous silicon (a-Si:H). DR detectors can offer both efficient (low-dose) x-ray image acquisition plus on-line readout of the latent image as electronic data. To date, solid-state, flat-panel, DR detectors have come in two principal designs, the indirect-conversion (x-ray scintillator-based) and the direct-conversion (x-ray photoconductor-based) types. This review describes the underlying principles and enabling technologies exploited by these designs of detector, and evaluates their physical imaging characteristics, comparing performance both against each other and computed radiography (CR). In standard projection radiography indirect conversion DR detectors currently offer superior physical image quality and dose efficiency compared with direct conversion DR and modern point-scan CR. These conclusions have been confirmed in the findings of clinical evaluations of DR detectors. Future trends in solid-state DR detector technologies are also briefly considered. Salient innovations include WiFi-enabled, portable DR detectors, improvements in x-ray absorber layers and developments in alternative electronic media to a-Si:H. PMID:18374710

  17. New Amorphous Silicon Alloy Systems

    NASA Astrophysics Data System (ADS)

    Kapur, Mridula N.

    1990-01-01

    The properties of hydrogenated amorphous silicon (a-Si:H) have been modified by alloying with Al, Ga and S respectively. The Al and Ga alloys are in effect quaternary alloys as they were fabricated in a carbon-rich discharge. The alloys were prepared by the plasma assisted chemical vapor deposition (PACVD) method. This method has several advantages, the major one being the relatively low defect densities of the resulting materials. The PACVD system used to grow the alloy films was designed and constructed in the laboratory. It was first tested with known (a-Si:H and a-Si:As:H) materials. Thus, it was established that device quality alloy films could be grown with the home-made PACVD setup. The chemical composition of the alloys was characterized by secondary ion mass spectrometry (SIMS), and electron probe microanalysis (EPMA). The homogeneous nature of hydrogen distribution in the alloys was established by SIMS depth profile analysis. A quantitative analysis of the bulk elemental content was carried out by EPMA. The analysis indicated that the alloying element was incorporated in the films more efficiently at low input gas concentrations than at the higher concentrations. A topological model was proposed to explain the observed behavior. The optical energy gap of the alloys could be varied in the 0.90 to 1.92 eV range. The Al and Ga alloys were low band gap materials, whereas alloying with S had the effect of widening the energy gap. It was observed that although the Si-Al and Si-Ga alloys contained significant amounts of C and H, the magnitude of the energy gap was determined by the metallic component. The various trends in optical properties could be related to the binding characteristics of the respective alloy systems. A quantitative explanation of the results was provided by White's tight binding model. The dark conductivity-temperature dependence of the alloys was examined. A linear dependence was observed for the Al and Ga systems. Electronic conduction in

  18. Metal electrode for amorphous silicon solar cells

    DOEpatents

    Williams, Richard

    1983-01-01

    An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

  19. Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

    DOEpatents

    Carlson, David E.

    1982-01-01

    An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

  20. Amorphization of silicon carbide by carbon displacement

    NASA Astrophysics Data System (ADS)

    Devanathan, R.; Gao, F.; Weber, W. J.

    2004-05-01

    We have used molecular dynamics simulations to examine the possibility of amorphizing silicon carbide (SiC) by exclusively displacing C atoms. At a defect generation corresponding to 0.2 displacements per atom, the enthalpy surpasses the level of melt-quenched SiC, the density decreases by about 15%, and the radial distribution function shows a lack of long-range order. Prior to amorphization, the surviving defects are mainly C Frenkel pairs (67%), but Si Frenkel pairs (18%) and antisite defects (15%) are also present. The results indicate that SiC can be amorphized by C sublattice displacements. Chemical short-range disorder, arising mainly from Frenkel pair production, plays a significant role in the amorphization.

  1. Military market for flat panel displays

    NASA Astrophysics Data System (ADS)

    Desjardins, Daniel D.; Hopper, Darrel G.

    1997-07-01

    This paper addresses the number, function and size of primary military displays and establishes a basis to determine the opportunities for technology insertion in the immediate future and into the next millennium. The military displays market is specified by such parameters as active area and footprint size, and other characteristics such as luminance, gray scale, resolution, color capability and night vision imaging system capability. A select grouping of funded, future acquisitions, planned and predicted cockpit kits, and form-fit-function upgrades are taken into account. It is the intent of this paper to provide an overview of the DoD niche market, allowing both government and industry a timely reference to insure meeting DoD requirements for flat-panel displays on schedule and in a cost-effective manner. The aggregate DoD market for direct view displays is presently estimated to be in excess of 157,000. Helmet/head mounted displays will add substantially to this total. The vanishing vendor syndrome for older display technologies is becoming a growing, pervasive problem throughout DoD, which consequently just leverage the more modern display technologies being developed for civil-commercial markets.

  2. Ion bombardment and disorder in amorphous silicon

    SciTech Connect

    Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

    1997-07-01

    The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects.

  3. Thermal and Cold Neutron Computed Tomography at the Los Alamos Neutron Scattering Center Using an Amorphous Silicon Detector Array

    SciTech Connect

    Claytor, T.N.; Schwab, M.J.; Farnum, E.H.; McDonald, T.E.; Summa, D.A.; Sheats, M.J.; Stupin, D.M.; Sievers, W.L.

    1998-07-19

    The use of the EG and G-Heimann RTM 128 or dpiX FS20 amorphous silicon (a-Si) detector array for thermal neutron radiography/computed tomography has proven to be a quick and efficient means of producing high quality digital radiographic images. The resolution, although not as good as film, is about 750 pm with the RTM and 127 pm with the dpiX array with a dynamic range in excess of 2,800. In many respects using an amorphous silicon detector is an improvement over other techniques such as imaging with a CCD camera, using a storage phosphor plate or film radiography. Unlike a CCD camera, which is highly susceptible to radiation damage, a-Si detectors can be placed in the beam directly behind the object under examination and do not require any special optics or turning mirrors. The amorphous silicon detector also allows enough data to be acquired to construct a digital image in just a few seconds (minimum gate time 40 ms) whereas film or storage plate exposures can take many minutes and then need to be digitized with a scanner. The flat panel can therefore acquire a complete 3D computed tomography data set in just a few tens of minutes. While a-Si detectors have been proposed for use in imaging neutron beams, this is the first reported implementation of such a detector for neutron imaging.

  4. Mechanism for hydrogen diffusion in amorphous silicon

    SciTech Connect

    Biswas, R.; Li, Q.; Pan, B.C.; Yoon, Y.

    1998-01-01

    Tight-binding molecular-dynamics calculations reveal a mechanism for hydrogen diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicons and breaking their Si{endash}Si bonds. The diffusing hydrogen carries with it a newly created dangling bond. These intermediate transporting states are densely populated in the network, have lower energies than H at the center of stretched Si{endash}Si bonds, and can play a crucial role in hydrogen diffusion. {copyright} {ital 1998} {ital The American Physical Society}

  5. Self-Diffusion in Amorphous Silicon.

    PubMed

    Strauß, Florian; Dörrer, Lars; Geue, Thomas; Stahn, Jochen; Koutsioubas, Alexandros; Mattauch, Stefan; Schmidt, Harald

    2016-01-15

    The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on ^{29}Si/^{nat}Si heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy. PMID:26824552

  6. Deuterium in crystalline and amorphous silicon

    SciTech Connect

    Borzi, R.; Ma, H.; Fedders, P.A.; Leopold, D.J.; Norberg, R.E.; Boyce, J.B.; Johnson, N.M.; Ready, S.E.; Walker, J.

    1997-07-01

    The authors report deuteron magnetic resonance (DMR) measurements on aged deuterium-implanted single crystal n-type silicon and comparisons with amorphous silicon spectra. The sample film was prepared six years ago by deuteration from a-D{sub 2} plasma and evaluated by a variety of experimental methods. Deuterium has been evolving with time and the present DMR signal shows a smaller deuteron population. A doublet from Si-D configurations along (111) has decreased more than have central molecular DMR components, which include 47 and 12 kHz FWHM gaussians. Transient DMR magnetization recoveries indicate spin lattice relaxation to para-D{sub 2} relaxation centers.

  7. Amorphous metallic films in silicon metallization systems

    NASA Technical Reports Server (NTRS)

    So, F.; Kolawa, E.; Nicolet, M. A.

    1985-01-01

    Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

  8. Superior radiation tolerant materials: Amorphous silicon oxycarbide

    NASA Astrophysics Data System (ADS)

    Nastasi, Michael; Su, Qing; Price, Lloyd; Colón Santana, Juan A.; Chen, Tianyi; Balerio, Robert; Shao, Lin

    2015-06-01

    We studied the radiation tolerance of amorphous silicon oxycarbide (SiOC) alloys by combining ion irradiation, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The amorphous SiOC alloys thin films were grown via co-sputtering from SiO2 and SiC (amorphous phase) targets either on a surface oxidized Si (100) substrate or on a sodium chloride substrate. By controlling the sputtering rate of each target, SiOC alloys with different compositions (1:2, 1:1, 2:1 ratios) were obtained. These alloys were irradiated by 100 keV He+ ions at both room temperature and 600 °C with damage levels ranging from 1 to 20 displacements per atom (dpa). TEM characterization shows no sign of crystallization, void formation or segregation in all irradiated samples. Our findings suggest that SiOC alloys are a class of promising radiation-tolerant materials.

  9. Optimization of key building blocks for a large-area radiographic and fluoroscopic dynamic digital x-ray detector based on a-Si:H/CsI:Tl flat panel technology

    NASA Astrophysics Data System (ADS)

    Ducourant, Thierry; Michel, Marc; Vieux, Gerard; Peppler, Tobias; Trochet, J. C.; Schulz, Reiner F.; Bastiaens, Raoul J. M.; Busse, Falko

    2000-04-01

    This paper introduces the key design optimizations which have been carried out recently in Trixell in order to prepare the future family of large area, combined static (Radiography) and dynamic (Fluoroscopy, Cardio...) digital X-ray detectors based on a-Si:H/CsI:Tl flat panel technology. These optimizations have been carried out on a 16' X 12' prototype that has been designed and built in a product-oriented way. We describe the detector technology and give some of its main characteristics, as well as some preliminary measurement results.The heart of the new prototype is a Cesium Iodide scintillating screen, directly evaporated onto a 2 K X 2.5 K pixel, array of amorphous silicon photodiodes and TFTs deposited on a glass substrate. The pixel pitch is 155 micrometer. The detective flat panel is connected to dedicated electronics which provides line addressing, low-noise column readout and multiplexing into a serial electrical signal. This signal is digitized over 14 bits to provide a direct digital image output, available for the host radiology system via an optical fiber. This type of detector (flat panel + electronics) is built into a light and thin (less than 100 mm) packaging which can be easily integrated in various x-ray equipment such as R&F tables, Angiography systems (incl. Cardiology), and mobile C-arm systems.

  10. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  11. High resolution amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  12. Excess specific heat in evaporated amorphous silicon.

    PubMed

    Queen, D R; Liu, X; Karel, J; Metcalf, T H; Hellman, F

    2013-03-29

    The specific heat C of e-beam evaporated amorphous silicon (a-Si) thin films prepared at various growth temperatures T(S) and thicknesses t was measured from 2 to 300 K, along with sound velocity v, shear modulus G, density n(Si), and Raman spectra. Increasing T(S) results in a more ordered amorphous network with increases in n(Si), v, G, and a decrease in bond angle disorder. Below 20 K, an excess C is seen in films with less than full density where it is typical of an amorphous solid, with both a linear term characteristic of two-level systems (TLS) and an additional (non-Debye) T3 contribution. The excess C is found to be independent of the elastic properties but to depend strongly on density. The density dependence suggests that low energy glassy excitations can form in a-Si but only in microvoids or low density regions and are not intrinsic to the amorphous silicon network. A correlation is found between the density of TLS n0 and the excess T3 specific heat c(ex) suggesting that they have a common origin.

  13. [Flat Panel Detector Philips introduced and its system direction].

    PubMed

    Yamada, Shinichi

    2002-01-01

    We introduced digital X-ray diagnostic systems with Flat panel detector both in general X-ray systems and in Angiography systems. Our introduced Flat Panel Detector has the latest technology and has Cesium Iodide (CsI) that absorbs X-ray energy and generates visible light. Detected light signals make digital X-ray images. CsI is the most important material because its absorption rate of X-ray influences the strength of output digital signal. The purpose in this paper is checking that is latest Flat Panel Detector pulls out enough capability CsI has. Especially the thickness of CsI relates to X-ray absorption. X-ray absorption rate depended on the thickness of CsI was calculated by using simulated X-ray model and the future direction of Flat Panel Detector system was discussed. PMID:12766268

  14. Amorphous silicon/polycrystalline thin film solar cells

    SciTech Connect

    Ullal, H.S.

    1991-03-13

    An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

  15. Direct-conversion flat-panel x-ray imaging: reduction of noise by presampling filtration

    NASA Astrophysics Data System (ADS)

    Rowlands, John A.; Ji, Winston G.; Zhao, Wei; Lee, Denny L. Y.

    2000-04-01

    Large area flat panel solid-state detectors are being studied for digital radiography and fluoroscopy. Such systems use active matrix arrays to readout latent charge images created either by direct conversion of x-ray energy to charge in a photoconductor or indirectly using a phosphor and individual photodiodes on the active matrix array. Our work has utilized the direct conversion method because of its simplicity and the higher resolution possible due to the electrostatic collection of secondary quanta. Aliasing of noise occurs in current designs of direct detectors based on amorphous selenium ((alpha) -Se) because of its high intrinsic resolution. This aliasing leads to a decrease in detective quantum efficiency (DQE) as frequency increases. It has been predicted, using a previously developed model of the complete imaging system, that appropriately controlled spatial filtration can reduce this aliased noise and hence increase DQE at the Nyquist frequency, fNY. Our purpose is to experimentally verify this concept by implementing presampling filtration in a practical flat panel system. An (alpha) -Se based flat panel imager is modified by incorporating an insulating layer between the active matrix and the (alpha) -Se layer to introduce a predetermined amount of presampling burring. The modified imager is evaluated using standard linear analysis tools, modulation transfer function (MTF), noise power spectra (NPS) and DQE(f), and the results are compared to theoretical predictions.

  16. Amorphous molybdenum silicon superconducting thin films

    SciTech Connect

    Bosworth, D. Sahonta, S.-L.; Barber, Z. H.; Hadfield, R. H.

    2015-08-15

    Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using W{sub x}Si{sub 1−x}, though other amorphous superconductors such as molybdenum silicide (Mo{sub x}Si{sub 1−x}) offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc) reaches a maximum of 7.6 K at a composition of Mo{sub 83}Si{sub 17}. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz), there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  17. Amorphous molybdenum silicon superconducting thin films

    NASA Astrophysics Data System (ADS)

    Bosworth, D.; Sahonta, S.-L.; Hadfield, R. H.; Barber, Z. H.

    2015-08-01

    Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using WxSi1-x, though other amorphous superconductors such as molybdenum silicide (MoxSi1-x) offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc) reaches a maximum of 7.6 K at a composition of Mo83Si17. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz), there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  18. The use of modern electronic flat panel devices for image guided radiation therapy:. Image quality comparison, intra fraction motion monitoring and quality assurance applications

    NASA Astrophysics Data System (ADS)

    Nill, S.; Stützel, J.; Häring, P.; Oelfke, U.

    2008-06-01

    With modern radiotherapy delivery techniques like intensity modulated radiotherapy (IMRT) it is possible to delivery a more conformal dose distribution to the tumor while better sparing the organs at risk (OAR) compared to 3D conventional radiation therapy. Due to the theoretically high dose conformity achievable it is very important to know the exact position of the target volume during the treatment. With more and more modern linear accelerators equipped with imaging devices this is now almost possible. These imaging devices are using energies between 120kV and 6MV and therefore different detector systems are used but the vast majority is using amorphous silicon flat panel devices with different scintilator screens and build up materials. The technical details and the image quality of these systems are discussed and first results of the comparison are presented. In addition new methods to deal with motion management and quality assurance procedures are shortly discussed.

  19. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  20. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, James L.

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  1. Three-dimensional IMRT verification with a flat-panel EPID.

    PubMed

    Steciw, S; Warkentin, B; Rathee, S; Fallone, B G

    2005-02-01

    A three-dimensional (3D) intensity-modulated radiotherapy (IMRT) pretreatment verification procedure has been developed based on the measurement of two-dimensional (2D) primary fluence profiles using an amorphous silicon flat-panel electronic portal imaging device (EPID). As described in our previous work, fluence profiles are extracted from EPID images by deconvolution with kernels that represent signal spread in the EPID due to radiation and optical scattering. The deconvolution kernels are derived using Monte Carlo simulations of dose deposition in the EPID and empirical fitting methods, for both 6 and 15 MV photon energies. In our new 3D verification technique, 2D fluence modulation profiles for each IMRT field in a treatment are used as input to a treatment planning system (TPS), which then generates 3D doses. Verification is accomplished by comparing this new EPID-based 3D dose distribution to the planned dose distribution calculated by the TPS. Thermoluminescent dosimeter (TLD) point dose measurements for an IMRT treatment of an anthropomorphic phantom were in good agreement with the EPID-based 3D doses; in contrast, the planned dose under-predicts the TLD measurement in a high-gradient region by approximately 16%. Similarly, large discrepancies between EPID-based and TPS doses were also evident in dose profiles of small fields incident on a water phantom. These results suggest that our 3D EPID-based method is effective in quantifying relevant uncertainties in the dose calculations of our TPS for IMRT treatments. For three clinical head and neck cancer IMRT treatment plans, our TPS was found to underestimate the mean EPID-based doses in the critical structures of the spinal cord and the parotids by approximately 4 Gy (11%-14%). According to radiobiological modeling calculations that were performed, such underestimates can potentially lead to clinically significant underpredictions of normal tissue complication rates.

  2. Image quality assessment of a pre-clinical flat-panel volumetric micro-CT scanner

    NASA Astrophysics Data System (ADS)

    Du, Louise Y.; Lee, Ting-Yim; Holdsworth, David W.

    2006-03-01

    Small animal imaging has recently become an area of increased interest because more human diseases can be modeled in transgenic and knockout rodents. Current micro-CT systems are capable of achieving spatial resolution on the order of 10 μm, giving highly detailed anatomical information. However, the speed of data acquisition of these systems is relatively slow, when compared with clinical CT systems. Dynamic CT perfusion imaging has proven to be a powerful tool clinically in detecting and diagnosing cancer, stroke, pulmonary and ischemic heart diseases. In order to perform this technique in mice and rats, quantitative CT images must be acquired at a rate of at least 1 Hz. Recently, a research pre-clinical CT scanner (eXplore Ultra, GE Healthcare) has been designed specifically for dynamic perfusion imaging in small animals. Using an amorphous silicon flat-panel detector and a clinical slip-ring gantry, this system is capable of acquiring volumetric image data at a rate of 1 Hz, with in-plane resolution of 150 μm, while covering the entire thoracic region of a mouse or whole organs of a rat. The purpose of this study was to evaluate the principal imaging performance of the micro-CT system, in terms of spatial resolution, image uniformity, linearity, dose and voxel noise for the feasibility of imaging mice and rats. Our investigations show that 3D images can be obtained with a limiting spatial resolution of 2.7 line pairs per mm and noise of 42 HU, using an acquisition interval of 8 seconds at an entrance dose of 6.4 cGy.

  3. Radiation resistance studies of amorphous silicon films

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.; Payson, J. Scott

    1989-01-01

    Hydrogenated amorphous silicon thin films were irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15 cm(-2). The films were characterized using photothermal deflection spectroscopy and photoconductivity measurements. The investigations show that the radiation introduces sub-band-gap states 1.35 eV below the conduction band and the states increase supralinearly with fluence. Photoconductivity measurements suggest the density of states above the Fermi energy is not changing drastically with fluence.

  4. Active noise control using a distributed mode flat panel loudspeaker.

    PubMed

    Zhu, H; Rajamani, R; Dudney, J; Stelson, K A

    2003-07-01

    A flat panel distributed mode loudspeaker (DML) has many advantages over traditional cone speakers in terms of its weight, size, and durability. However, its frequency response is uneven and complex, thus bringing its suitability for active noise control (ANC) under question. This paper presents experimental results demonstrating the effective use of panel DML speakers in an ANC application. Both feedback and feedforward control techniques are considered. Effective feedback control with a flat panel speaker could open up a whole range of new noise control applications and has many advantages over feedforward control. The paper develops a new control algorithm to attenuate tonal noise of a known frequency by feedback control. However, due to the uneven response of the speakers, feedback control is found to be only moderately effective even for this narrow-band application. Feedforward control proves to be most capable for the flat panel speaker. Using feedforward control, the sound pressure level can be significantly reduced in close proximity to an error microphone. The paper demonstrates an interesting application of the flat panel in which the panel is placed in the path of sound and effectively used to block sound transmission using feedforward control. This is a new approach to active noise control enabled by the use of flat panels and can be used to prevent sound from entering into an enclosure in the first place rather than the traditional approach of attempting to cancel sound after it enters the enclosure.

  5. Amorphous silicon-based microchannel plates

    NASA Astrophysics Data System (ADS)

    Franco, Andrea; Riesen, Yannick; Wyrsch, Nicolas; Dunand, Sylvain; Powolny, François; Jarron, Pierre; Ballif, Christophe

    2012-12-01

    Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to -340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls.

  6. Lithium transport through nanosized amorphous silicon layers.

    PubMed

    Hüger, Erwin; Dörrer, Lars; Rahn, Johanna; Panzner, Tobias; Stahn, Jochen; Lilienkamp, Gerhard; Schmidt, Harald

    2013-03-13

    Lithium migration in nanostructured electrode materials is important for an understanding and improvement of high energy density lithium batteries. An approach to measure lithium transport through nanometer thin layers of relevant electrochemical materials is presented using amorphous silicon as a model system. A multilayer consisting of a repetition of five [(6)LiNbO3(15 nm)/Si (10 nm)/(nat)LiNbO3 (15 nm)/Si (10 nm)] units is used for analysis, where LiNbO3 is a Li tracer reservoir. It is shown that the change of the relative (6)Li/(7)Li isotope fraction in the LiNbO3 layers by lithium diffusion through the nanosized silicon layers can be monitored nondestructively by neutron reflectometry. The results can be used to calculate transport parameters.

  7. Structural relaxation of vacancies in amorphous silicon

    SciTech Connect

    Kim, E.; Lee, Y.H.; Chen, C.; Pang, T.

    1997-07-01

    The authors have studied the structural relaxation of vacancies in amorphous silicon (a-Si) using a tight-binding molecular-dynamics method. The most significant difference between vacancies in a-Si and those in crystalline silicon (c-Si) is that the deep gap states do not show up in a-Si. This difference is explained through the unusual behavior of the structural relaxation near the vacancies in a-Si, which enhances the sp{sup 2} + p bonding near the band edges. They have also observed that the vacancies do not migrate below 450 K although some of them can still be annihilated, particularly at high defect density due to large structural relaxation.

  8. The future of amorphous silicon photovoltaic technology

    SciTech Connect

    Crandall, R; Luft, W

    1995-06-01

    Amorphous silicon modules are commercially available. They are the first truly commercial thin-film photovoltaic (PV) devices. Well-defined production processes over very large areas (>1 m{sup 2}) have been implemented. There are few environmental issues during manufacturing, deployment in the field, or with the eventual disposal of the modules. Manufacturing safety issues are well characterized and controllable. The highest measured initial efficiency to date is 13.7% for a small triple-stacked cell and the highest stabilized module efficiency is 10%. There is a consensus among researchers, that in order to achieve a 15% stabilized efficiency, a triple-junction amorphous silicon structure is required. Fundamental improvements in alloys are needed for higher efficiencies. This is being pursued through the DOE/NREL Thin-Film Partnership Program. Cost reductions through improved manufacturing processes are being pursued under the National Renewable Energy Laboratory/US Department of Energy (NREL/DOE)-sponsored research in manufacturing technology (PVMaT). Much of the work in designing a-Si devices is a result of trying to compensate for the Staebler-Wronski effect. Some new deposition techniques hold promise because they have produced materials with lower stabilized defect densities. However, none has yet produced a high efficiency device and shown it to be more stable than those from standard glow discharge deposited material.

  9. Method for improving the stability of amorphous silicon

    DOEpatents

    Branz, Howard M.

    2004-03-30

    A method of producing a metastable degradation resistant amorphous hydrogenated silicon film is provided, which comprises the steps of growing a hydrogenated amorphous silicon film, the film having an exposed surface, illuminating the surface using an essentially blue or ultraviolet light to form high densities of a light induced defect near the surface, and etching the surface to remove the defect.

  10. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOEpatents

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  11. Technical advances of interventional fluoroscopy and flat panel image receptor.

    PubMed

    Lin, Pei-Jan Paul

    2008-11-01

    In the past decade, various radiation reducing devices and control circuits have been implemented on fluoroscopic imaging equipment. Because of the potential for lengthy fluoroscopic procedures in interventional cardiovascular angiography, these devices and control circuits have been developed for the cardiac catheterization laboratories and interventional angiography suites. Additionally, fluoroscopic systems equipped with image intensifiers have benefited from technological advances in x-ray tube, x-ray generator, and spectral shaping filter technologies. The high heat capacity x-ray tube, the medium frequency inverter generator with high performance switching capability, and the patient dose reduction spectral shaping filter had already been implemented on the image intensified fluoroscopy systems. These three underlying technologies together with the automatic dose rate and image quality (ADRIQ) control logic allow patients undergoing cardiovascular angiography procedures to benefit from "lower patient dose" with "high image quality." While photoconductor (or phosphor plate) x-ray detectors and signal capture thin film transistor (TFT) and charge coupled device (CCD) arrays are analog in nature, the advent of the flat panel image receptor allowed for fluoroscopy procedures to become more streamlined. With the analog-to-digital converter built into the data lines, the flat panel image receptor appears to become a digital device. While the transition from image intensified fluoroscopy systems to flat panel image receptor fluoroscopy systems is part of the on-going "digitization of imaging," the value of a flat panel image receptor may have to be evaluated with respect to patient dose, image quality, and clinical application capabilities. The advantage of flat panel image receptors has yet to be fully explored. For instance, the flat panel image receptor has its disadvantages as compared to the image intensifiers; the cost of the equipment is probably the most

  12. An infrared and luminescence study of tritiated amorphous silicon

    SciTech Connect

    Sidhu, L.S.; Kosteski, T.; Kherani, N.P.; Gaspari, F.; Zukotynski, S.; Shmayda, W.

    1997-07-01

    Tritium has been incorporated into amorphous silicon. Infrared spectroscopy shows new infrared vibration modes due to silicon-tritium (Si-T) bonds in the amorphous silicon network. Si-T vibration frequencies are related to Si-H vibration frequencies by simple mass relationships. Inelastic collisions of {beta} particles, produced as a result of tritium decay, with the amorphous silicon network results in the generation of electron-hole pairs. Radiative recombination of these carriers is observed. Dangling bonds associated with the tritium decay reduce luminescence efficiency.

  13. Development of CT and 3D-CT Using Flat Panel Detector Based Real-Time Digital Radiography System

    SciTech Connect

    Ravindran, V. R.; Sreelakshmi, C.; Vibin

    2008-09-26

    The application of Digital Radiography in the Nondestructive Evaluation (NDE) of space vehicle components is a recent development in India. A Real-time DR system based on amorphous silicon Flat Panel Detector has been developed for the NDE of solid rocket motors at Rocket Propellant Plant of VSSC in a few years back. The technique has been successfully established for the nondestructive evaluation of solid rocket motors. The DR images recorded for a few solid rocket specimens are presented in the paper. The Real-time DR system is capable of generating sufficient digital X-ray image data with object rotation for the CT image reconstruction. In this paper the indigenous development of CT imaging based on the Realtime DR system for solid rocket motor is presented. Studies are also carried out to generate 3D-CT image from a set of adjacent CT images of the rocket motor. The capability of revealing the spatial location and characterisation of defect is demonstrated by the CT and 3D-CT images generated.

  14. Theoretical studies of amorphous silicon and hydrogenated amorphous silicon with molecular dynamics simulations

    SciTech Connect

    Kwon, I.

    1991-12-20

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) have been studied with molecular dynamics simulations. The structural, vibrational, and electronic properties of these materials have been studied with computer-generated structural models and compare well with experimental observations. The stability of a-si and a-Si:H have been studied with the aim of understanding microscopic mechanisms underlying light-induced degradation in a-Si:H (the Staebler-Wronski effect). With a view to understanding thin film growth processes, a-Si films have been generated with molecular dynamics simulations by simulating the deposition of Si-clusters on a Si(111) substrate. A new two- and three-body interatomic potential for Si-H interactions has been developed. The structural properties of a-Si:H networks are in good agreement with experimental measurements. The presence of H atoms reduces strain and disorder relative to networks without H.

  15. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  16. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  17. Ultrafast recombination and trapping in amorphous silicon

    NASA Astrophysics Data System (ADS)

    Esser, A.; Seibert, K.; Kurz, H.; Parsons, G. N.; Wang, C.; Davidson, B. N.; Lucovsky, G.; Nemanich, R. J.

    1990-02-01

    We have studied the time-resolved reflectivity and transmission changes induced by femtosecond laser pulses in hydrogenated and nonhydrogenated amorphous silicon thin films, a-Si:H and a-Si, respectively. By varying the pump power, and hence the photoexcited free-carrier densities, by several orders of magnitude, a quadratic, nonradiative recombination process has been identified that controls the density of free carriers on a picosecond time scale for excitation levels above 5×1018 cm-3 in a-Si:H and above 5×1019 cm-3 in a-Si. At lower free-carrier densities, the reflectivity transients display the dynamics expected from a trapping mechanism. We suggest that the process that dominates for the higher free-carrier densities may result from Auger recombination but with a dependence on the carrier density that is different from that which has been observed in crystalline semiconductors where k selection prevails.

  18. Short range atomic migration in amorphous silicon

    NASA Astrophysics Data System (ADS)

    Strauß, F.; Jerliu, B.; Geue, T.; Stahn, J.; Schmidt, H.

    2016-05-01

    Experiments on self-diffusion in amorphous silicon between 400 and 500 °C are presented, which were carried out by neutron reflectometry in combination with 29Si/natSi isotope multilayers. Short range diffusion is detected on a length scale of about 2 nm, while long range diffusion is absent. Diffusivities are in the order of 10-19-10-20 m2/s and decrease with increasing annealing time, reaching an undetectable low value for long annealing times. This behavior is strongly correlated to structural relaxation and can be explained as a result of point defect annihilation. Diffusivities for short annealing times of 60 s follow the Arrhenius law with an activation enthalpy of (0.74 ± 0.21) eV, which is interpreted as the activation enthalpy of Si migration.

  19. Direct-patterned optical waveguides on amorphous silicon films

    DOEpatents

    Vernon, Steve; Bond, Tiziana C.; Bond, Steven W.; Pocha, Michael D.; Hau-Riege, Stefan

    2005-08-02

    An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.

  20. Structural and Elastic Properties of Amorphous Silicon

    NASA Astrophysics Data System (ADS)

    Feldman, Joseph; Papaconstantopoulos, Dimitris; Bernstein, Noam; Mehl, Michael

    2003-03-01

    In this work we study the elastic and structural properties of amorphous silicon using the NRL tight-binding method (N. Bernstein, et al., Phys. Rev. B 62, 4477 (2000).). Using conjugate gradient energy minimization we have relaxed a 216 atom model. The amorphous-crystal energy difference is 0.017 Ryd/atom, similar to a calculation on a related model using the empirical Stillinger-Weber potential and twice the experimental value. The structure of the relaxed model is consistent with diffraction experiments as well as more indirect experimental results. The model is fully four-fold coordinated with an RMS bond angle deviation of only 11^rc, and is expanded 2% in volume with respect to the TB crystalline value. Using the method of homogeneous deformation we have found a relaxed shear modulus of ˜57 GPa (with an estimated 2% uncertainty due to anisotropy) and relaxed bulk modulus of 87.3 GPa, in very good agreement with a previous (ab initio) calculated value of 82.5 GPa (M. Durandurdu and D. A. Drabold, Phys. Rev. B 64, 014101 (2001).). We find that the distribution of relaxation displacements under shear is markedly skewed towards large values. Finally, we discuss the force constants and vacancy energy distributions for several models.

  1. RF Sputtering for preparing substantially pure amorphous silicon monohydride

    DOEpatents

    Jeffrey, Frank R.; Shanks, Howard R.

    1982-10-12

    A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  2. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE PAGES

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  3. Process for producing amorphous and crystalline silicon nitride

    DOEpatents

    Morgan, Peter E. D.; Pugar, Eloise A.

    1985-01-01

    A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

  4. Process for producing amorphous and crystalline silicon nitride

    DOEpatents

    Morgan, P.E.D.; Pugar, E.A.

    1985-11-12

    A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

  5. Amorphous-diamond electron emitter

    DOEpatents

    Falabella, Steven

    2001-01-01

    An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

  6. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

    PubMed Central

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

  7. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

    PubMed

    Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

  8. Diffractive flat panel solar concentrators of a novel design.

    PubMed

    de Jong, Ties M; de Boer, Dick K G; Bastiaansen, Cees W M

    2016-07-11

    A novel design for a flat panel solar concentrator is presented which is based on a light guide with a grating applied on top that diffracts light into total internal reflection. By combining geometrical and diffractive optics the geometrical concentration ratio is optimized according to the principles of nonimaging optics, while the thickness of the device is minimized due to the use of total internal reflection. PMID:27410900

  9. Flat panel planar optic display. Revision 4/95

    SciTech Connect

    Veligdan, J.T.

    1995-05-01

    A prototype 10 inch flat panel Planar Optic display, (POD), screen has been constructed and tested. This display screen is comprised of hundreds of planar optic glass sheets bonded together with a cladding layer between each sheet where each glass sheet represents a vertical line of resolution. The display is 9 inches wide by 5 inches high and approximately 1 inch thick. A 3 milliwatt HeNe laser is used as the illumination source and a vector scanning technique is employed.

  10. Diffractive flat panel solar concentrators of a novel design.

    PubMed

    de Jong, Ties M; de Boer, Dick K G; Bastiaansen, Cees W M

    2016-07-11

    A novel design for a flat panel solar concentrator is presented which is based on a light guide with a grating applied on top that diffracts light into total internal reflection. By combining geometrical and diffractive optics the geometrical concentration ratio is optimized according to the principles of nonimaging optics, while the thickness of the device is minimized due to the use of total internal reflection.

  11. Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

    NASA Astrophysics Data System (ADS)

    Bai, Feng; Li, Hong-Jin; Huang, Yuan-Yuan; Fan, Wen-Zhong; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo; Zhao, Quan-Zhong

    2016-10-01

    We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser.

  12. 75 FR 51286 - Certain Flat Panel Digital Televisions and Components Thereof; Notice of Investigation

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-19

    ... COMMISSION Certain Flat Panel Digital Televisions and Components Thereof; Notice of Investigation AGENCY: U.S... importation of certain flat panel digital televisions and components thereof by reason of infringement of... certain flat panel digital televisions and components thereof that infringe one or more of claims 22-25...

  13. [Flat-panel detector technology -State-of-the-art and future prospects-].

    PubMed

    Yamazaki, Tatsuya

    2002-01-01

    A flat-panel detector (FPD) is a long-awaited technology to implement the digital X-ray imaging technology into the radiological department. This paper describes the state-of-the-art technology and future prospects on the FPD technology. State-of-the-art technology was reviewed taking the CXDI series as an example. Several FPD-based systems have been introduced into the Japanese market since CXDI-11 opened it in November 1998. Accompanying CXDI-C2 for control, CXDI-22 for table position and CXDI-31 for portable, the CXDI series fulfills the requirement of the radiography room being a fully digitalized room. The FPD on the CXDI series is comprised of a scintillator (Gd(2)O(2)S:Tb(3+)) as a primary sensor in which the X-ray is captured and an amorphous silicon detector (LANMIT) as a secondary sensor in which the fluorescent light is detected. Since the scintillator is identical to that of the screen-film systems, it can be said as proven, durable and chemically stable and it is expected to produce the same image quality as the screen-film systems. CXDI-31, a portable FPD-based system, was developed targeting thinner dimensions, lightweight, durability and high spatial resolution. Thoroughly re-designing the mechanical structure and reducing the power consumption at the readout IC realized thinner dimensions. Introducing the portable note PC technologies successfully combined lightweight with durability. Improving the sensor process and re-designing the layout made the sensor high resolution without compromising the signal-to-noise ratio. Future prospects were overviewed in the aspect of technology and applications. Sensitivity, spatial resolution, frame rate and portability were described as the upcoming technology. Increasing gain and reducing noise will realize higher sensitivity, especially by adopting the PbI(2), HgI(2) or such photoconductor materials as the primary sensor. Pixelized amplifier will also achieve higher sensitivity. Layered sensor designed such

  14. Flexible Protocrystalline Silicon Solar Cells with Amorphous Buffer Layer

    NASA Astrophysics Data System (ADS)

    Ishikawa, Yasuaki; Schubert, Markus B.

    2006-09-01

    A low deposition temperature of 110 °C is mandatory for directly growing amorphous-silicon-based solar cells on plastic foil. The optimum absorber material at this low temperature is protocrystalline, i.e., right at the transition between amorphous and crystalline silicon. Polyethylene terephtalate foil of 50 μm thickness form the substrate of our flexible p-i-n single-junction cells. We discuss three peculiar processing techniques for achieving the maximum photovoltaic conversion efficiency of flexible low-temperature solar cells. First, we employ an optimized microcrystalline silicon p-type window layer; second, we use protocrystalline silicon for the i-layer; third, we insert an undoped amorphous silicon buffer layer at the p/i interface. The best flexible cells attain power conversion efficiencies of up to 4.9%.

  15. Direct-conversion flat-panel detector for region-of-interest angiography

    NASA Astrophysics Data System (ADS)

    Ganguly, Arundhuti; Rudin, Stephen; Bednarek, Daniel R.; Hoffmann, Kenneth R.; Yang, Chang-Ying J.; Wang, Zhou

    2001-06-01

    Minimally invasive image-guided interventions require very high image resolution and quality, specifically over regions-of-interest (ROI) crucial to the procedure. An ROI high quality image allows limited patient radiation deposition while permitting rapid frame transfer rates. Considering current developments in direct conversion Flat Panel Detectors (FPD), advantages of such an imager for ROI angiography were investigated. The performance of an amorphous-selenium based FPD was simulated to evaluate improvements in MTF and DQE under various angiographic imaging conditions. The detector envisioned incorporates the smallest pixel size of 70 mm, reported to date, and a photoconductor thickness of 1000 mm to permit angiography. The MTF of the FPD is calculated to be 60% at the Nyquist frequency of 7.1 lp/mm compared to 6% for a previously reported CsI(Tl)-based ROI CCD camera. The DQE(0) of the FPD at 0.7 mR and 70 kVp is 74% while for the CCD camera is 70%. At 7.1 lp/mm, the FPD's DQE is 26% while for the CCD camera it is 12%. Images of an undeployed stent with 70 mm pixel mammography FPD prototype, compare favorably with images acquired with the CCD camera. Thus a practical direct flat-panel ROI detector with both improved performance and physical size is proposed.

  16. Electron and hole dynamics in amorphous silicon

    SciTech Connect

    Werner, A.; Kunst, M.

    1988-07-01

    Charge carrier dynamics in doped and undoped hydrogenated amorphous silicon (a-Si:H) films is studied by contactless time-resolved photoconductivity measurements. Subband-gap and above band-gap excitation are used to generate excess mobile charge carriers. In undoped a-Si:H the electron decay at charge carrier concentrations larger than 10/sup 16/ cm/sup -3/ is mainly due to an electron-hole recombination which is controlled by hole dispersion. n doping introduces hole traps which increase the effective electron lifetime drastically as they quench this electron-hole recombination channel. At high n-doping levels the electron decay becomes faster due to an increase of the concentration of recombination centers upon doping. In lightly doped p-type samples the transient photoconductivity reflects the interaction of mobile holes with states in the valence-band tail. In heavily doped p- and n-type films the majority carriers decay by a second-order recombination process with trapped minority charge carriers. The transport parameters deduced agree with time-of-flight data.

  17. Breakdown analysis of multilayer amorphous silicon photoreceptors

    NASA Astrophysics Data System (ADS)

    Hu, Jian

    1993-06-01

    The breakdown mechanism of hydrogenated amorphous silicon (a-Si:H) has been investigated. It has been shown that the acceptance of the surface potential of an a-Si:H photoreceptor is very sensitive to the micro-roughness of the substrate surface. This is because the junction between the metal substrate (usually aluminum) and the blocking layer (p+ or n+ a-Si:H) is strongly affected by the micro-roughness of the substrate surface. A model is proposed to expound this phenomenon, which indicates that the existence of micro- defects on the substrate surface results in the bending of the metal-semiconductor junction at these defect positions; that is, the original parallel plane junction changes into a spherical abrupt junction. Compared to the former, the curved junction has a lower breakdown voltage, therefore, it will more easily break down at these defect positions during charging. An a-Si:H photoreceptor was prepared on the drum substrate half covered with a thin aluminum film to confirm the model. The experiment result was qualitatively in agreement with the analysis mentioned above. In addition, the effects of PVD-like deposition processes (e.g., high power or high argon diluted silane deposition) on the microstructure and breakdown of a-Si:H photoreceptors are reviewed.

  18. Conductance fluctuations in hydrogenated amorphous silicon

    SciTech Connect

    Parman, C.E.

    1992-01-01

    Measurements of co-planar resistance fluctuations are reported for n-type doped hydrogenated amorphous silicon over the temperature range 190 < T < 450 K. The spectral density of the fluctuations obey a 1/f frequency dependence over the frequency range 1 < f < 10[sup 3] Hz. The noise power displays a non-linear dependence on the applied DC current, that is that noise power S[sub I] [proportional to] I[sup b], where 1.0 < b < 2.5. Random telegraph switching noise is observed with fluctuations as large as [delta]R/R [approx] 10[sup [minus]2] in samples with volumes of 10[sup [minus]7] cm[sup 3]. Statistical analysis of the noise power spectra show the fluctuations to be strongly non-Gaussian. The noise power magnitude and frequency dependence are both time dependent. These results suggest that cooperative dynamics govern the conductance fluctuations, and are discussed in terms of models for noise in composite and inhomogeneous materials.

  19. Metastable Defects in Tritiated Amorphous Silicon

    SciTech Connect

    Ju, T.; Whitaker, J.; Zukotynski, S.; Kherani, N.; Taylor, P. C.; Stradins, P.

    2007-01-01

    The appearance of optically or electrically induced defects in hydrogenated amorphous silicon (a-Si:H), especially those that contribute to the Staebler-Wronski effect, has been the topic of numerous studies, yet the mechanism of defect creation and annealing is far from clarified. We have been observing the growth of defects caused by tritium decay in tritiated a Si-H instead of inducing defects optically. Tritium decays to {sup 3}He, emitting a beta particle (average energy of 5.7 keV) and an antineutrino. This reaction has a half-life of 12.5 years. In these 7 at.% tritium-doped a-Si:H samples each beta decay will create a defect by converting a bonded tritium to an interstitial helium, leaving behind a silicon dangling bond. We use ESR (electron spin resonance) and PDS( photothermal deflection spectroscopy) to track the defects. First we annealed these samples, and then we used ESR to determine the initial defect density around 10{sup 16} to 10{sup 17}/cm{sup 3}, which is mostly a surface spin density. After that we have kept the samples in liquid nitrogen for almost two years. During the two years we have used ESR to track the defect densities of the samples. The defect density increases without saturation to a value of 3 x 10{sup 19}/cm{sup 3} after two years, a number smaller than one would expect if each tritium decay were to create a silicon dangling bond (2 x 10{sup 20}/cm{sup 3}). This result suggests that there might be either an annealing process that remains at liquid nitrogen temperature, or tritium decay in clustered phase not producing a dangling bond due to bond reconstruction and emission of the hydrogen previously paired to Si-bonded tritium atom. After storage in liquid nitrogen for two years, we have annealed the samples. We have stepwise annealed one sample at temperatures up to 200, where all of the defects from beta decay are annealed out, and reconstructed the annealing energy distribution. The second sample, which was grown at 150, has

  20. Indirect flat-panel detector with avalanche gain: Fundamental feasibility investigation for SHARP-AMFPI (scintillator HARP active matrix flat panel imager)

    SciTech Connect

    Zhao Wei; Li Dan; Reznik, Alla; Lui, B.J.M.; Hunt, D.C.; Rowlands, J.A.; Ohkawa, Yuji; Tanioka, Kenkichi

    2005-09-15

    An indirect flat-panel imager (FPI) with avalanche gain is being investigated for low-dose x-ray imaging. It is made by optically coupling a structured x-ray scintillator CsI(Tl) to an amorphous selenium (a-Se) avalanche photoconductor called HARP (high-gain avalanche rushing photoconductor). The final electronic image is read out using an active matrix array of thin film transistors (TFT). We call the proposed detector SHARP-AMFPI (scintillator HARP active matrix flat panel imager). The advantage of the SHARP-AMFPI is its programmable gain, which can be turned on during low dose fluoroscopy to overcome electronic noise, and turned off during high dose radiography to avoid pixel saturation. The purpose of this paper is to investigate the important design considerations for SHARP-AMFPI such as avalanche gain, which depends on both the thickness d{sub Se} and the applied electric field E{sub Se} of the HARP layer. To determine the optimal design parameter and operational conditions for HARP, we measured the E{sub Se} dependence of both avalanche gain and optical quantum efficiency of an 8 {mu}m HARP layer. The results were used in a physical model of HARP as well as a linear cascaded model of the FPI to determine the following x-ray imaging properties in both the avalanche and nonavalanche modes as a function of E{sub Se}: (1) total gain (which is the product of avalanche gain and optical quantum efficiency); (2) linearity; (3) dynamic range; (4) gain nonuniformity resulting from thickness nonuniformity; and (5) effects of direct x-ray interaction in HARP. Our results showed that a HARP layer thickness of 8 {mu}m can provide adequate avalanche gain and sufficient dynamic range for x-ray imaging applications to permit quantum limited operation over the range of exposures needed for radiography and fluoroscopy.

  1. Silicon heterojunction solar cell and crystallization of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Lu, Meijun

    The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (˜100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (<200°C). In first part of this dissertation, I will introduce our work on front-junction SHJ solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells. Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (<600 nm) light, leading to non-ideal blue response and lower short circuit currents (JSC) in the front-junction SHJ cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers. Another trend for solar cell industry is thin film solar cells, since

  2. Nuclear magnetic resonance studies of hydrogen in amorphous silicon

    SciTech Connect

    Norberg, R.E.; Fedders, P.A.; Leopold, D.J.

    1996-12-31

    Proton and deuteron NMR in hydrogenated amorphous silicon yield quantitative measures of species-specific structural configurations and their dynamics. Populations of silicon-bonded and molecular hydrogens correlate with photovoltaic quality, doping, illumination/dark anneal sequences, and with infrared and other characterizations. High quality films contain substantial populations of nanovoid-trapped molecular hydrogen.

  3. A real-time flat-panel X-ray pixel imaging system for low-dose medical diagnostics and craniofacial applications.

    PubMed

    Chapuy, S; Dimcovski, D; Dimcovski, Z; Grigoriev, E; Grob, E; Ligier, Y; Pachoud, M; Riondel, F; Rüfenacht, D; Sayegh, C; Terrier, F; Valley, J F; Verdun, F R

    2000-01-01

    The aim of this study was to evaluate on-line performance of a real-time digital imaging system based on amorphous silicon technology and to compare it with conventional film-screen equipment. The digital detecting imager consists of (1) a converter, which transforms the energy of the incident X rays into light; (2) a real-time digital detecting system, capable of producing as many as 10 pictures per second using a large-area pixel matrix (20 x 20 cm2) based on solid-state amorphous silicon sensor technology with a pitch of 400 microns; and (3) appropriate computer tools for control, real-time image treatment, data representation, and off-line analysis. Different phantoms were used for qualitative comparison with the conventional film-screen technique, with images obtained with both systems at the normal dose (used as a reference), as well as with dose reduction by a factor of 10 to 100. Basic image quality parameters evaluated showed that the response of the detector is linear in a wide range of entrance air kerma; the dynamic range is higher compared with the conventional film-screen combination; the spatial resolution is 1.25 lp per millimeter, as expected from the pixel size; and good image quality is ensured at doses substantially lower than for the film-screen technique. The flat-panel X-ray imager based on amorphous silicon technology implemented in standard radiographic equipment permits acquisition of real-time images in radiology (as many as 10 images per second) of diagnostic quality with a marked reduction of dose (as much as 100 times) and better contrast compared with the standard film technique. Preliminary results obtained with a 100-micron pitch imager based on the same technology show better quality but a less substantial dose reduction. Applications in craniofacial surgery look promising.

  4. Electrical characteristics of amorphous iron-tungsten contacts on silicon

    NASA Technical Reports Server (NTRS)

    Finetti, M.; Pan, E. T.-S.; Nicolet, M.-A.; Suni, I.

    1983-01-01

    The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.

  5. Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467

    SciTech Connect

    Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I.

    1997-07-01

    This book was divided into the following parts: Staebler-Wronski and Fundamental Defect Studies in Amorphous Silicon; The Story of Hydrogen in Amorphous Silicon; Photoelectric Properties of Amorphous Silicon; Deposition and Properties of Microcrystalline Silicon; Deposition Studies for Amorphous Silicon and Related Materials; Solar Cells; Thin-Film Transistors; and Sensors and Novel Device Concepts. Separate abstracts were prepared for most of the papers in the volume.

  6. Radiotherapy treatment verification using radiological thickness measured with an amorphous silicon electronic portal imaging device: Monte Carlo simulation and experiment

    NASA Astrophysics Data System (ADS)

    Kairn, T.; Cassidy, D.; Sandford, P. M.; Fielding, A. L.

    2008-07-01

    This work validates the use of an amorphous-silicon, flat-panel electronic portal imaging device (a-Si EPID) for use as a gauge of patient or phantom radiological thickness, as an alternative to dosimetry. The response of the a-Si EPID is calibrated by adapting a technique previously applied to scanning liquid ion chamber EPIDs, and the stability, accuracy and reliability of this calibration are explored in detail. We find that the stability of this calibration, between different linacs at the same centre, is sufficient to justify calibrating only one of the EPIDs every month and using the calibration data thus obtained to perform measurements on all of the other linacs. Radiological thickness is shown to provide a reliable means of relating experimental measurements to the results of BEAMnrc Monte Carlo simulations of the linac-phantom-EPID system. For these reasons we suggest that radiological thickness can be used to verify radiotherapy treatment delivery and identify changes in the treatment field, patient position and target location, as well as patient physical thickness.

  7. Transmissive metallic contact for amorphous silicon solar cells

    DOEpatents

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  8. Solution-processed amorphous silicon surface passivation layers

    SciTech Connect

    Mews, Mathias Sontheimer, Tobias; Korte, Lars; Rech, Bernd; Mader, Christoph; Traut, Stephan; Wunnicke, Odo

    2014-09-22

    Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37 ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724 mV was achieved, demonstrating excellent silicon surface passivation.

  9. Direct-conversion flat-panel imager with avalanche gain: feasibility investigation for HARP-AMFPI.

    PubMed

    Wronski, M M; Rowlands, J A

    2008-12-01

    The authors are investigating the concept of a direct-conversion flat-panel imager with avalanche gain for low-dose x-ray imaging. It consists of an amorphous selenium (a-Se) photoconductor partitioned into a thick drift region for x-ray-to-charge conversion and a relatively thin region called high-gain avalanche rushing photoconductor (HARP) in which the charge undergoes avalanche multiplication. An active matrix of thin film transistors is used to read out the electronic image. The authors call the proposed imager HARP active matrix flat panel imager (HARP-AMFPI). The key advantages of HARP-AMFPI are its high spatial resolution, owing to the direct-conversion a-Se layer, and its programmable avalanche gain, which can be enabled during low dose fluoroscopy to overcome electronic noise and disabled during high dose radiography to prevent saturation of the detector elements. This article investigates key design considerations for HARP-AMFPI. The effects of electronic noise on the imaging performance of HARP-AMFPI were modeled theoretically and system parameters were optimized for radiography and fluoroscopy. The following imager properties were determined as a function of avalanche gain: (1) the spatial frequency dependent detective quantum efficiency; (2) fill factor; (3) dynamic range and linearity; and (4) gain nonuniformities resulting from electric field strength nonuniformities. The authors results showed that avalanche gains of 5 and 20 enable x-ray quantum noise limited performance throughout the entire exposure range in radiography and fluoroscopy, respectively. It was shown that HARP-AMFPI can provide the required gain while maintaining a 100% effective fill factor and a piecewise dynamic range over five orders of magnitude (10(-7)-10(-2) R/frame). The authors have also shown that imaging performance is not significantly affected by the following: electric field strength nonuniformities, avalanche noise for x-ray energies above 1 keV and direct interaction

  10. Direct-conversion flat-panel imager with avalanche gain: Feasibility investigation for HARP-AMFPI

    SciTech Connect

    Wronski, M. M.; Rowlands, J. A.

    2008-12-15

    The authors are investigating the concept of a direct-conversion flat-panel imager with avalanche gain for low-dose x-ray imaging. It consists of an amorphous selenium (a-Se) photoconductor partitioned into a thick drift region for x-ray-to-charge conversion and a relatively thin region called high-gain avalanche rushing photoconductor (HARP) in which the charge undergoes avalanche multiplication. An active matrix of thin film transistors is used to read out the electronic image. The authors call the proposed imager HARP active matrix flat panel imager (HARP-AMFPI). The key advantages of HARP-AMFPI are its high spatial resolution, owing to the direct-conversion a-Se layer, and its programmable avalanche gain, which can be enabled during low dose fluoroscopy to overcome electronic noise and disabled during high dose radiography to prevent saturation of the detector elements. This article investigates key design considerations for HARP-AMFPI. The effects of electronic noise on the imaging performance of HARP-AMFPI were modeled theoretically and system parameters were optimized for radiography and fluoroscopy. The following imager properties were determined as a function of avalanche gain: (1) the spatial frequency dependent detective quantum efficiency; (2) fill factor; (3) dynamic range and linearity; and (4) gain nonuniformities resulting from electric field strength nonuniformities. The authors results showed that avalanche gains of 5 and 20 enable x-ray quantum noise limited performance throughout the entire exposure range in radiography and fluoroscopy, respectively. It was shown that HARP-AMFPI can provide the required gain while maintaining a 100% effective fill factor and a piecewise dynamic range over five orders of magnitude (10{sup -7}-10{sup -2} R/frame). The authors have also shown that imaging performance is not significantly affected by the following: electric field strength nonuniformities, avalanche noise for x-ray energies above 1 keV and direct

  11. Threshold irradiation dose for amorphization of silicon carbide

    SciTech Connect

    Snead, L.L.; Zinkle, S.J.

    1997-04-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

  12. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    SciTech Connect

    Chowdhury, Zahidur R. Kherani, Nazir P.

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  13. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    NASA Astrophysics Data System (ADS)

    Chowdhury, Zahidur R.; Kherani, Nazir P.

    2014-12-01

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide-plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are VOC of 666 mV, JSC of 29.5 mA-cm-2, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  14. Long-term stability of amorphous-silicon modules

    NASA Astrophysics Data System (ADS)

    Ross, R. G., Jr.

    The Jet Propulsion Laboratory (JPL) program of developing qualification tests necessary for amorphous silicon modules, including appropriate accelerated environmental tests reveal degradation due to illumination. Data were given which showed the results of temperature-controlled field tests and accelerated tests in an environmental chamber.

  15. Integral bypass diodes in an amorphous silicon alloy photovoltaic module

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Flaisher, H.

    1991-01-01

    Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

  16. Supercontinuum generation in hydrogenated amorphous silicon waveguides at telecommunication wavelengths.

    PubMed

    Safioui, Jassem; Leo, François; Kuyken, Bart; Gorza, Simon-Pierre; Selvaraja, Shankar Kumar; Baets, Roel; Emplit, Philippe; Roelkens, Gunther; Massar, Serge

    2014-02-10

    We report supercontinuum (SC) generation centered on the telecommunication C-band (1550 nm) in CMOS compatible hydrogenated amorphous silicon waveguides. A broadening of more than 550 nm is obtained in 1cm long waveguides of different widths using as pump picosecond pulses with on chip peak power as low as 4 W.

  17. Photocurrent images of amorphous-silicon solar-cell modules

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Shumka, A.; Trask, J.

    1985-01-01

    Results obtained in applying the unique characteristics of the solar cell laser scanner to investigate the defects and quality of amorphous silicon cells are presented. It is concluded that solar cell laser scanners can be effectively used to nondestructively test not only active defects but also the cell quality and integrity of electrical contacts.

  18. Advances in infrastructure support for flat panel display manufacturing

    NASA Astrophysics Data System (ADS)

    Bardsley, James N.; Ciesinski, Michael F.; Pinnel, M. Robert

    1997-07-01

    The success of the US display industry, both in providing high-performance displays for the US Department of Defense at reasonable cost and in capturing a significant share of the global civilian market, depends on maintaining technological leadership and on building efficient manufacturing capabilities. The US Display Consortium (USDC) was set up in 1993 by the US Government and private industry to guide the development of the infrastructure needed to support the manufacturing of flat panel displays. This mainly involves the supply of equipment and materials, but also includes the formation of partnerships and the training of a skilled labor force. Examples are given of successful development projects, some involving USDC participation, others through independent efforts of its member companies. These examples show that US-based companies can achieve leadership positions in this young and rapidly growing global market.

  19. Flat-panel video resolution LED display system

    NASA Astrophysics Data System (ADS)

    Wareberg, P. G.; Kennedy, D. I.

    The system consists of a 128 x 128 element X-Y addressable LED array fabricated from green-emitting gallium phosphide. The LED array is interfaced with a 128 x 128 matrix TV camera. Associated electronics provides for seven levels of grey scale above zero with a grey scale ratio of square root of 2. Picture elements are on 0.008 inch centers resulting in a resolution of 125 lines-per-inch and a display area of approximately 1 sq. in. The LED array concept lends itself to modular construction, permitting assembly of a flat panel screen of any desired size from 1 x 1 inch building blocks without loss of resolution. A wide range of prospective aerospace applications exist extending from helmet-mounted systems involving small dedicated arrays to multimode cockpit displays constructed as modular screens. High-resolution LED arrays are already used as CRT replacements in military film-marking reconnaissance applications.

  20. Improving the diversity of manufacturing electroluminescent flat panel displays

    SciTech Connect

    Moss, T.S.; Samuels, J.A.; Smith, D.C.

    1995-09-01

    Crystalline calcium thiogallate with a cerium dopant has been deposited by metal-organic chemical vapor deposition (MOCVD) at temperatures below 600{degrees}C on a low cost glass substrate. An EL luminance of 1.05 fL was observed 40 volts above threshold at 60 Hz. This is more than an order of magnitude improvement over earlier crystalline-as-deposited thiogallate materials. These results pave the way for the use of MOCVD as a potential method for processing full color thin-film electroluminescent (TFEL) flat panel displays. The formation of the CaGa{sub 2}S{sub 4}:Ce phosphor requires precise control over a number of deposition parameters including flow rates, substrate temperature, and reactor pressure. The influence of these parameters will be discussed in terms of structure, uniformity, and TFEL device performance.

  1. EMI investigation and modeling of a flat panel display

    NASA Astrophysics Data System (ADS)

    Shinde, Satyajeet

    It is often important to carry out EMI analysis in the design phase of an electronic product to predict the radiated emissions. An EMI analysis is important to predict if the product complies with the FCC regulations as well as to gain an understanding of the noise coupling and radiation mechanisms. EMI analysis and prediction of radiated emissions in electronic products that have an electrically large chassis, pose a challenge due to the presence of multiple resonant structures and noise-coupling mechanisms. The study focusses on the investigation of the main noise coupling mechanisms, the approach and methods used for the modeling of a flat panel display. Full-wave simulation models are a powerful tool for the prediction of radiated emissions and the visualization of coupling paths within the product. The first part deals with the measurement of radiated emissions from the display under standard test conditions and the identification of the main noise sources using near-field scanning. The contribution of the chassis components - frame, back cover and the back panel, to the radiated emission is analyzed using shielding measurements. Noise coupling from the main board, flex cables, display driver boards and the display is analyzed from measurements. The second part deals with the full-wave modeling of the components - main board, flex cables, chassis and the display driver boards. The modeling approach is demonstrated by highlighting some of the challenges in modeling larger structures having many details. The simulation model contains the main components of the TV that contribute to far-field radiation. The full-wave modeling is done using the CST Microwave Studio. Two sets of simulation models are described - the common mode models and the complete models. The use of the common mode models for the identification of the resonant structures is demonstrated. The far-field radiated emissions along with the coupling mechanism within the flat panel display can be

  2. Diffractive optics for compact flat panel displays. Final report

    SciTech Connect

    Sweeney, D.; DeLong, K.

    1997-04-29

    Three years ago LLNL developed a practical method to dramatically reduce the chromatic aberration in single element diffractive imaging lenses. High efficiency, achromatic imaging lenses have been fabricated for human vision correction. This LDRD supported research in applying our new methods to develop a unique, diffraction-based optical interface with solid state, microelectronic imaging devices. Advances in microelectronics have led to smaller, more efficient components for optical systems. There have, however, been no equivalent advances in the imaging optics associated with these devices. The goal of this project was to replace the bulky, refractive optics in typical head-mounted displays with micro-thin diffractive optics to directly image flat-panel displays into the eye. To visualize the system think of the lenses of someone`s eyeglasses becoming flat-panel displays. To realize this embodiment, we needed to solve the problems of large chromatic aberrations and low efficiency that are associated with diffraction. We have developed a graceful tradeoff between chromatic aberrations and the diffractive optic thickness. It turns out that by doubling the thickness of a micro-thin diffractive lens we obtain nearly a two-times improvement in chromatic performance. Since the human eye will tolerate one diopter of chromatic aberration, we are able to achieve an achromatic image with a diffractive lens that is only 20 microns thick, versus 3 mm thickness for the comparable refractive lens. Molds for the diffractive lenses are diamond turned with sub-micron accuracy; the final lenses are cast from these molds using various polymers. We thus retain both the micro- thin nature of the diffractive optics and the achromatic image quality of refractive optics. During the first year of funding we successfully extended our earlier technology from 1 cm diameter optics required for vision applications up to the 5 cm diameter optics required for this application. 3 refs., 6 figs.

  3. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

    1995-03-14

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

  4. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, Archie H.; Carapella, Jeffrey C.; Gallagher, Alan C.

    1995-01-01

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

  5. Heat-Induced Agglomeration of Amorphous Silicon Nanoparticles Toward the Formation of Silicon Thin Film.

    PubMed

    Jang, Bo Yun; Kim, Ja Young; Seo, Gyeongju; Shin, Chae-Ho; Ko, Chang Hyun

    2016-01-01

    The thermal behavior of silicon nanoparticles (Si NPs) was investigated for the preparation of silicon thin film using a solution process. TEM analysis of Si NPs, synthesized by inductively coupled plasma, revealed that the micro-structure of the Si NPs was amorphous and that the Si NPs had melted and merged at a comparatively low temperature (~750 °C) considering bulk melting temperature of silicon (1414 °C). A silicon ink solution was prepared by dispersing amorphous Si NPs in propylene glycol (PG). It was then coated onto a silicon wafer and a quartz plate to form a thin film. These films were annealed in a vacuum or in an N₂ environment to increase their film density. N2 annealing at 800 °C and 1000 °C induced the crystallization of the amorphous thin film. An elemental analysis by the SIMS depth profile showed that N₂annealing at 1000 °C for 180 min drastically reduced the concentrations of carbon and oxygen inside the silicon thin film. These results indicate that silicon ink prepared using amorphous Si NPs in PG can serve as a proper means of preparing silicon thin film via solution process. PMID:27398566

  6. Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide.

    PubMed

    Chang, Geng-rong; Ma, Fei; Ma, Da-yan; Xu, Ke-wei

    2010-11-19

    Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized by a magnetron co-sputtering process and post-annealing. X-ray photoelectron spectroscopy, glancing x-ray diffraction, Raman spectroscopy and high-resolution transmission electron microscopy were used to characterize the chemical composition and the microstructural properties. The results show that the sizes and size distribution of silicon quantum dots can be tuned by changing the annealing atmosphere and the atom ratio of silicon and carbon in the matrix. A physicochemical mechanism is proposed to demonstrate this formation process. Photoluminescence measurements indicate a multi-band configuration due to the quantum confinement effect of silicon quantum dots with different sizes. The PL spectra are further widened as a result of the existence of amorphous silicon quantum dots. This multi-band configuration would be extremely advantageous in improving the photoelectric conversion efficiency of photovoltaic solar cells.

  7. Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide

    NASA Astrophysics Data System (ADS)

    Chang, Geng-rong; Ma, Fei; Ma, Da-yan; Xu, Ke-wei

    2010-11-01

    Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized by a magnetron co-sputtering process and post-annealing. X-ray photoelectron spectroscopy, glancing x-ray diffraction, Raman spectroscopy and high-resolution transmission electron microscopy were used to characterize the chemical composition and the microstructural properties. The results show that the sizes and size distribution of silicon quantum dots can be tuned by changing the annealing atmosphere and the atom ratio of silicon and carbon in the matrix. A physicochemical mechanism is proposed to demonstrate this formation process. Photoluminescence measurements indicate a multi-band configuration due to the quantum confinement effect of silicon quantum dots with different sizes. The PL spectra are further widened as a result of the existence of amorphous silicon quantum dots. This multi-band configuration would be extremely advantageous in improving the photoelectric conversion efficiency of photovoltaic solar cells.

  8. Amorphous-silicon solar cells with screen-printed metallization

    NASA Astrophysics Data System (ADS)

    Baert, Kris A.; Roggen, J.; Nijs, Johan F.; Mertens, Robert P.

    1990-03-01

    The use of screen printing for the back-side metallization of amorphous-silicon solar cells on glass is proposed. Compared with the conventional aluminum evaporation process, screen printing is attractive because it offers high throughput and because direct patterning is performed during the printing process. The critical point in realizing a thick-film screen-printed contact on amorphous-silicon solar cells is found to be the contact resistivity between the contact and the n-layer. Contact resistivities below 1 ohm-sq cm have been obtained using a microcrystalline instead of an amorphous n+ layer and a screen-printed contact based on Mo, Ti, or Ni. Amorphous-silicon solar cells with a screen-printed back contact had a performance comparable with that of cells with an evaporated Al contact, resulting in a efficiency of 9.7 percent. Spectral response measurements demonstrated that the screen-printed contact is an efficient reflector of long-wavelength photons, resulting in a high red response due to internal light trapping.

  9. Plasma Deposition of Doped Amorphous Silicon

    NASA Technical Reports Server (NTRS)

    Calcote, H. F.

    1985-01-01

    Pair of reports present further experimental details of investigation of plasma deposition of films of phosphorous-doped amosphous silicon. Probe measurements of electrical resistance of deposited films indicated films not uniform. In general, it appeared that resistance decreased with film thickness.

  10. Light-induced metastable structural changes in hydrogenated amorphous silicon

    SciTech Connect

    Fritzsche, H.

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  11. Multiple-Flat-Panel System Displays Multidimensional Data

    NASA Technical Reports Server (NTRS)

    Gundo, Daniel; Levit, Creon; Henze, Christopher; Sandstrom, Timothy; Ellsworth, David; Green, Bryan; Joly, Arthur

    2006-01-01

    The NASA Ames hyperwall is a display system designed to facilitate the visualization of sets of multivariate and multidimensional data like those generated in complex engineering and scientific computations. The hyperwall includes a 77 matrix of computer-driven flat-panel video display units, each presenting an image of 1,280 1,024 pixels. The term hyperwall reflects the fact that this system is a more capable successor to prior computer-driven multiple-flat-panel display systems known by names that include the generic term powerwall and the trade names PowerWall and Powerwall. Each of the 49 flat-panel displays is driven by a rack-mounted, dual-central-processing- unit, workstation-class personal computer equipped with a hig-hperformance graphical-display circuit card and with a hard-disk drive having a storage capacity of 100 GB. Each such computer is a slave node in a master/ slave computing/data-communication system (see Figure 1). The computer that acts as the master node is similar to the slave-node computers, except that it runs the master portion of the system software and is equipped with a keyboard and mouse for control by a human operator. The system utilizes commercially available master/slave software along with custom software that enables the human controller to interact simultaneously with any number of selected slave nodes. In a powerwall, a single rendering task is spread across multiple processors and then the multiple outputs are tiled into one seamless super-display. It must be noted that the hyperwall concept subsumes the powerwall concept in that a single scene could be rendered as a mosaic image on the hyperwall. However, the hyperwall offers a wider set of capabilities to serve a different purpose: The hyperwall concept is one of (1) simultaneously displaying multiple different but related images, and (2) providing means for composing and controlling such sets of images. In place of elaborate software or hardware crossbar switches, the

  12. Excimer laser crystallization of amorphous silicon on metallic substrate

    NASA Astrophysics Data System (ADS)

    Delachat, F.; Antoni, F.; Slaoui, A.; Cayron, C.; Ducros, C.; Lerat, J.-F.; Emeraud, T.; Negru, R.; Huet, K.; Reydet, P.-L.

    2013-06-01

    An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J cm-2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J cm-2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites' columnar growth.

  13. RBS study of amorphous silicon carbide films deposited by PECVD

    NASA Astrophysics Data System (ADS)

    Huran, J.; Hotovy, I.; Kobzev, A. P.; Balalykin, N. I.

    2004-03-01

    We present properties of nitrogen-doped amorphous silicon carbide films that were grown by a plasma enhanced chemical vapour deposition (PECVD) technique and annealed by pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH3 into the gas mixture of silane SiH4 and methane CH4, which were directly introduced into the reaction chamber. The actual amount of nitrogen in the SiC films was determined by Rutherford backscattering spectrometry (RBS). A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen.

  14. Use of Tritium in the Study of defects in Amorphous Silicon

    SciTech Connect

    Costea, S.; Pisana, S.; Kherani, N.P.; Gaspari, F.; Kosteski, T.; Shmayda, W.T.; Zukotynski, S.

    2005-11-28

    Hydrogen is known to strongly affect the physical properties of amorphous semiconductors. Indeed hydrogen is introduced during the growth of amorphous silicon films, used in active matrix displays and solar cells, to passivate silicon dangling bonds and to relax the lattice thereby reducing the density of states in the energy gap by several orders of magnitude and giving rise to device grade material. Ideally, hydrogenated amorphous silicon (a-Si:H) is a continuous covalently bonded random network of silicon-silicon and silicon-hydrogen atoms, with the predominant nearest neighbour environment similar to that of crystalline silicon.

  15. High Thermal Conductivity of a Hydrogenated Amorphous Silicon Film

    SciTech Connect

    Liu, X.; Feldman, J. L.; Cahill, D. G.; Crandall, R. S.; Bernstein, N.; Photiadis, D. M.; Mehl, M. J.; Papaconstantopoulos, D. A.

    2009-01-23

    We measured the thermal conductivity {kappa} of an 80 {micro}m thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3{omega} (80-300 K) and the time-domain thermoreflectance (300 K) methods. The {kappa} is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher {kappa} for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

  16. High Thermal Conductivity of a Hydrogenated Amorphous Silicon Film

    NASA Astrophysics Data System (ADS)

    Liu, Xiao; Feldman, J. L.; Cahill, D. G.; Crandall, R. S.; Bernstein, N.; Photiadis, D. M.; Mehl, M. J.; Papaconstantopoulos, D. A.

    2009-01-01

    We measured the thermal conductivity κ of an 80μm thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3ω (80-300 K) and the time-domain thermoreflectance (300 K) methods. The κ is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher κ for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

  17. Spherical silicon photonic microcavities: From amorphous to polycrystalline

    NASA Astrophysics Data System (ADS)

    Fenollosa, R.; Garín, M.; Meseguer, F.

    2016-06-01

    Shaping silicon as a spherical object is not an obvious task, especially when the object size is in the micrometer range. This has the important consequence of transforming bare silicon material in a microcavity, so it is able to confine light efficiently. Here, we have explored the inside volume of such microcavities, both in their amorphous and in their polycrystalline versions. The synthesis method, which is based on chemical vapor deposition, causes amorphous microspheres to have a high content of hydrogen that produces an onionlike distributed porous core when the microspheres are crystallized by a fast annealing regime. This substantially influences the resonant modes. However, a slow crystallization regime does not yield pores, and produces higher-quality-factor resonances that could be fitted to the Mie theory. This allows the establishment of a procedure for obtaining size calibration standards with relative errors of the order of 0.1%.

  18. Electrochemical degradation of amorphous-silicon photovoltaic modules

    NASA Technical Reports Server (NTRS)

    Mon, G. R.; Ross, R. G., Jr.

    1985-01-01

    Techniques of module electrochemical corrosion research, developed during reliability studies of crystalline-silicon modules (C-Si), have been applied to this new investigation into amorphous-silicon (a-Si) module reliability. Amorphous-Si cells, encapsulated in the polymers polyvinyl butyral (PVB) and ethylene vinyl acetate (EVA), were exposed for more than 1200 hours in a controlled 85 C/85 percent RH environment, with a constant 500 volts applied between the cells and an aluminum frame. Plotting power output reduction versus charge transferred reveals that about 50 percent a-Si cell failures can be expected with the passage of 0.1 to 1.0 Coulomb/cm of cell-frame edge length; this threshold is somewhat less than that determined for C-Si modules.

  19. The reliability and stability of multijunction amorphous silicon PV modules

    SciTech Connect

    Carlson, D.E.

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  20. Cryogenic flat-panel gas-gap heat switch

    NASA Astrophysics Data System (ADS)

    Vanapalli, S.; Keijzer, R.; Buitelaar, P.; ter Brake, H. J. M.

    2016-09-01

    A compact additive manufactured flat-panel gas-gap heat switch operating at cryogenic temperature is reported in this paper. A guarded-hot-plate apparatus has been developed to measure the thermal conductance of the heat switch with the heat sink temperature in the range of 100-180 K. The apparatus is cooled by a two-stage GM cooler and the temperature is controlled with a heater and a braided copper wire connection. A thermal guard is mounted on the hot side of the device to confine the heat flow axially through the sample. A gas handling system allows testing the device with different gas pressures in the heat switch. Experiments are performed at various heat sink temperatures, by varying gas pressure in the gas-gap and with helium, hydrogen and nitrogen gas. The measured off-conductance with a heat sink temperature of 115 K and the hot plate at 120 K is 0.134 W/K, the on-conductance with helium and hydrogen gases at the same temperatures is 4.80 W/K and 4.71 W/K, respectively. This results in an on/off conductance ratio of 37 ± 7 and 35 ± 6 for helium and hydrogen respectively. The experimental results matches fairly well with the predicted heat conductance at cryogenic temperatures.

  1. Sarnoff JND Vision Model for Flat-Panel Design

    NASA Technical Reports Server (NTRS)

    Brill, Michael H.; Lubin, Jeffrey

    1998-01-01

    This document describes adaptation of the basic Sarnoff JND Vision Model created in response to the NASA/ARPA need for a general-purpose model to predict the perceived image quality attained by flat-panel displays. The JND model predicts the perceptual ratings that humans will assign to a degraded color-image sequence relative to its nondegraded counterpart. Substantial flexibility is incorporated into this version of the model so it may be used to model displays at the sub-pixel and sub-frame level. To model a display (e.g., an LCD), the input-image data can be sampled at many times the pixel resolution and at many times the digital frame rate. The first stage of the model downsamples each sequence in time and in space to physiologically reasonable rates, but with minimum interpolative artifacts and aliasing. Luma and chroma parts of the model generate (through multi-resolution pyramid representation) a map of differences-between test and reference called the JND map, from which a summary rating predictor is derived. The latest model extensions have done well in calibration against psychophysical data and against image-rating data given a CRT-based front-end. THe software was delivered to NASA Ames and is being integrated with LCD display models at that facility,

  2. Amorphous-silicon thin-film heterojunction solar cells

    SciTech Connect

    Cretella, M. C.; Gregory, J. A.; Sandstrom, D. B.; Paul, W.

    1981-01-01

    The investigation of amorphous silicon materials at MTSEC has had two major thrusts: (1) to improve the amorphous material, i.e., obtain a low state density in the gap, improve the carrier collection depth and diminish non-radiative recombinations; and (2) to attempt to understand and improve on the limitations of the junction devices while evaluating the amorphous silicon materials. In the first of these efforts, the investigation has continued to examine the modifications to the a-Si(H) network by alloying silicon with other group IVA elements, either in binary or ternary compositions, and/or by replacing the hydrogenation for defect compensation with a combination of hydrogenation and alkylation or hydrogenation and halogenation. The doped junction layers are being examined in an attempt to determine the limiting characteristics of the junctions in solar cell devices of these amorphous materials. Amorphous alloys of Si-Ge, Si-C, Si-Sn were prepared as well as ternary compositions of Si-Ge-C and Si-Sn-C. In addition, Na vapor was added to the gas feed to deposit a-Si(Na, H) films, and to prepare Si-Sn, fluoride was added along with the tin by vapor additions of SnF/sub 4/ to the gas feed. The optical properties of these materials were measured, and structural and compositional information was obtained from the IR vibrational spectra using the scanning electron microscope and from analyses using scanning Auger microscopy. Electrical measurements have included the dark conductivity and the photo conductivity under room fluorescent light and at AM1 conditions. With alloys that displayed promising photoconductive properties n-i-p devices were prepared to assess the solar cell properties. Details are presented. (WHK)

  3. Charged particle detectors made from thin layers of amorphous silicon

    SciTech Connect

    Morel, J.R.

    1986-05-01

    A series of experiments was conducted to determine the feasibility of using hydrogenated amorphous silicon (..cap alpha..-Si:H) as solid state thin film charged particle detectors. /sup 241/Am alphas were successfully detected with ..cap alpha..-Si:H devices. The measurements and results of these experiments are presented. The problems encountered and changes in the fabrication of the detectors that may improve the performance are discussed.

  4. Optically induced conductivity changes in amorphous silicon: A historical perspective

    SciTech Connect

    Staebler, D.L.

    1997-07-01

    A historical perspective of the discovery of optically induced changes in amorphous silicon is presented in this paper from my personal point of view. It includes the story of how Chris Wronski and the author discovered the effect, the key elements in the R and D environment that lead to the quick realization that the effect was reversible and reproducible, how the research environment supported the rapid publication of their first paper, and a brief look at the effect from today's perspective.

  5. Detection of charged particles in amorphous silicon layers

    SciTech Connect

    Kaplan, S.N.; Morel, J.R.; Mulera, T.A.; Perez-Mendez, V.; Schnurmacher, G.; Street, R.A.

    1985-10-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics. 4 refs., 7 figs.

  6. Enhanced Multiple Exciton Generation in Amorphous Silicon Nanoparticles

    NASA Astrophysics Data System (ADS)

    Kryjevski, Andrei; Mihaylov, Deyan; Kilin, Dmitri

    2015-03-01

    Multiple exciton generation (MEG) in nm-sized hydrogen-passivated silicon nanowires (NWs), and quasi two-dimensional nanofilms depends strongly on the degree of the core structural disorder as shown by the many-body perturbation theory (MBPT) calculations based on the DFT simulations. Here, we use the HSE exchange correlation functional. In MBPT, we work to the 2nd order in the electron-photon coupling and in the approximate screened Coulomb interaction. We also include the effect of excitons for which we solve Bethe-Salpeter Equation. We calculate quantum efficiency (QE), the average number of excitons created by a single absorbed photon, in 3D arrays of Si29H36 quantum dots, NWs, and quasi 2D silicon nanofilms, all with both crystalline and amorphous core structures. Efficient MEG with QE of 1.3 up to 1.8 at the photon energy of about 3Eg , where Eg is the gap, is predicted in these nanoparticles except for the crystalline NW and film where QE ~= 1 . MEG in the amorphous nanoparticles is enhanced by the electron localization due to structural disorder. The exciton effects significantly red-shift QE (Ephoton) curves. Nanometer-sized amorphous silicon NWs and films are predicted to have effective MEG within the solar spectrum range. We acknowledge NSF support (CHE-1413614) for method development.

  7. Femtosecond studies of plasma formation in crystalline and amorphous silicon

    NASA Astrophysics Data System (ADS)

    Kuett, Waldemar; Esser, Anton; Seibert, Klaus; Lemmer, Uli; Kurz, Heinrich

    1990-08-01

    Transient pump-probe reflectivity measurements are performed on crystalline and amorphous Silicon samples with 50 fs optical pulses at 2 eV. The excited carrier densities range from 1017cm3 up to a few 1021cm3. In both cases the reflectivity signal is dominated by a Drude-like carrier response. Crystalline Silicon shows a distinct subpicosecond feature due to the cooling of the optically excited hot carriers with a time constant of 200-300 fs. Diffusion and Auger-recombination come into play at higher carrier densities. A superlinear increase of instant reflectivity signal with excitation fluence is due to two-photon absorption (TPA) with a TPA-coeffiecient f:37+-5 cm/GW. In amorphous Silicon the TPA process is not observable. The recovery of the induced negative reflectivity changes is dominated by trapping into bandtail and defect states at lower carrier densities. At higher densities a non-radiative recombination process dominates the relaxation of free carriers in both materials. Comparison with crystalline Silicon clearly demonstrates the enhancement of the Auger-recombination process in disordered materials by more than an order of magnitude.

  8. Motion-compensated defect interpolation for flat-panel detectors

    NASA Astrophysics Data System (ADS)

    Aach, Til; Barth, Erhardt; Mayntz, Claudia

    2004-05-01

    One advantage of flat-panel X-ray detectors is the immediate availability of the acquired images for display. Current limitations in large-area active-matrix manufacturing technology, however, require that the images read out from such detectors be processed to correct for inactive pixels. In static radiographs, these defects can only be interpolated by spatial filtering. Moving X-ray image modalities, such as fluoroscopy or cine-angiography, permit to use temporal information as well. This paper describes interframe defect interpolation algorithms based on motion compensation and filtering. Assuming the locations of the defects to be known, we fill in the defective areas from past frames, where the missing information was visible due to motion. The motion estimator is based on regularized block matching, with speedup obtained by successive elimination and related measures. To avoid the motion estimator locking on to static defects, these are cut out of each block during matching. Once motion is estimated, three methods are available for defect interpolation: direct filling-in by the motion-compensated predecessor, filling-in by a 3D-multilevel median filtered value, and spatiotemporal mean filtering. Results are shown for noisy fluoroscopy sequences acquired in clinical routine with varying amounts of motion and simulated defects up to six lines wide. They show that the 3D-multilevel median filter appears as the method of choice since it causes the least blur of the interpolated data, is robust with respect to motion estimation errors and works even in non-moving areas.

  9. Heat Transfar Properties of Flat-Panel Evacuated Porous Insrlators

    NASA Astrophysics Data System (ADS)

    Yoneno, Hirosyi; Yamamoto, Ryoichi

    Flat Panel evacuated porous insulators have been produced by filling powder or fiber (such as perlite powder, diatomaceous earth powder, silica aerogel powder, g lass fiber and ceramic fiber) in film-like laminated plastic container and by evacuating to form vacuum in it is interior. Heat transfer properties of these evacuated insulators have been studied under various conditions (such as particle diameter, surface area, packing density, solid volume fraction and void dimension). The apparent mean thermal conductivity has been measured for the boundary surface temperature at cold face temperature 13°C and hot face temperature 35°. The effect of air pressure ranging from 1 Pa to one atomosphere (105 Pa) was examined. The results were as follows. (1) For each powder the apparent mean thermal conductivity decreases with decreasing residual air pressure, and at very low pressure bellow 1 -103 Pa the conductivity becomes indeqendent of pressure. The thermal conductivity at 1.3Pa is 0.0053 W/mK for perlite powder, 0.0048W/mK for diatomaceous earth powder, 0.0043 W/mK for silica aerogel powder and 0.0029W/mK for glass fiber. (2) With decreasing particle size, the apparent mean thermal conductivity is constant independent of residual air pressure in higher pressure region. It is that void dimension continues to decrease with particle size and the mean free path of air becomes comparable with void dimension. (3) In the range of minor solid volume fraction, the apparent mean thermal conductivity at very low precreases with decreasing particle size. This shows the thermal contact resistance of the solid particle increases with decreasing particle size.

  10. Growth model of lantern-like amorphous silicon oxide nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Ping; Zou, Xingquan; Chi, Lingfei; Li, Qiang; Xiao, Tan

    2007-03-01

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO2 and active carbon at 1000 °C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 µm. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiOx nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  11. Flexible amorphous silicon PIN diode x-ray detectors

    NASA Astrophysics Data System (ADS)

    Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

    2013-05-01

    A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

  12. Electron-beam-induced information storage in hydrogenated amorphous silicon devices

    DOEpatents

    Yacobi, B.G.

    1985-03-18

    A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

  13. Interference filter with amorphous silicon layer and direct laser recording on it

    NASA Astrophysics Data System (ADS)

    Kutanov, A.; Sydyk uluu, Nurbek; Snimshikov, I.; Kazakbaeva, Z.

    2016-08-01

    The interference spectral filters with amorphous silicon layer deposited by magnetron sputtering on the reflective metal layer on a glass substrate are developed. Interference filter select from white light source components corresponding to quasimonochromatic wavelength with a narrow bandwidth. The thickness of the amorphous silicon layer determines the center wavelength of the pass band of the filter. It proposed to use interference filter with amorphous silicon layer for direct laser recoding on it. Results on direct laser recording on amorphous silicon layer of the interference filter by single-mode Blu Ray laser (X = 405 nm) with high contrast reflected image are demonstrated.

  14. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOEpatents

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  15. Grain boundary resistance to amorphization of nanocrystalline silicon carbide

    PubMed Central

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-01-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized. PMID:26558694

  16. Grain boundary resistance to amorphization of nanocrystalline silicon carbide

    NASA Astrophysics Data System (ADS)

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-11-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized.

  17. Grain boundary resistance to amorphization of nanocrystalline silicon carbide.

    PubMed

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-01-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized. PMID:26558694

  18. Multi-cusp ion source for doping process of flat panel display manufacturing

    SciTech Connect

    Inouchi, Yutaka Matsumoto, Takeshi; Dohi, Shojiro; Tanii, Masahiro; Takahashi, Genki; Nishimura, Ippei; Tatemichi, Junichi; Konishi, Masashi; Naito, Masao

    2014-02-15

    We developed a multi-cusp ion source for Nissin ion doping system iG5 which is used in low temperature poly-crystalline silicon processes for flat panel display (FPD) manufacturing. In this ion source, BF{sub 3} or PH{sub 3} diluted H{sub 2} plasmas are produced and large area ribbon ion beams are extracted. In general, ion ratio of B{sup +} in BF{sub 3} plasma is much smaller than BF{sub 2}{sup +} in multi-cusp ion sources. We developed a new method to increase B{sup +} ratio and obtained mass analyzed B{sup +} target current of 130 mA. We employed newly improved multi-slot type electrodes for the beam extraction system and obtained stable beams with the uniformity of below 3%. In BF{sub 3} plasmas, several undesirable metal fluorides are produced in the plasma chamber and deposited on the electrode system, which cause glitches and poor beam uniformity. We introduce several cleaning methods.

  19. Recombination and metastability in amorphous silicon and silicon germanium alloys

    NASA Astrophysics Data System (ADS)

    Silver, M.

    1992-07-01

    This report describes the first year of a continuing research study to understand how recombination, trapping, and band-mobility modification affecting the electronic properties of amorphous semiconductors can be measured, characterized, and described by an appropriate spectrum of defect states, and how light-induced defects in a-Si:H and native defects in a-SiGe:H affect transport properties in these materials. The objective was to determine how the Staebler-Wronski defects affect the electronic processes in a-Si:H and a-SiGe:H films. To do this, electroluminescence (EL) and forward bias current in p-i-n devices (i-layer thicknesses greater than 2 micron) were studied both experimentally and theoretically before and after light soaking. A simple picture was developed to compare forward bias current to the EL signal. The result was unexpected: the product of the final current times the rise time was not constant before and after light soaking as expected from the concept of gain band width, but instead changed radically. The rise time t(sub x) increased by more than one order of magnitude while the final current I(sub f) did not change significantly with light soaking. On the other hand the I(sub f)t(sub x) product did hold close to a constant when only the applied voltage changed.

  20. Recombination and metastability in amorphous silicon and silicon germanium alloys

    SciTech Connect

    Silver, M. )

    1992-07-01

    This report describes the first year of a continuing research study to understand how recombination, trapping, and band-mobility modification affecting the electronic properties of amorphous semiconductors can be measured, characterized, and described by an appropriate spectrum of defect states, and how light-induced defects in a-Si:H and native defects in a-SiGe:H affect transport properties in these materials. The objective was to determine how the Staebler-Wronski defects affect the electronic processes in a-Si:H and a-SiGe:H films. To do this, electroluminescence (EL) and forward bias current in p-i-n devices (i-layer thickness > 2 {mu}m) were studied both experimentally and theoretically before and after light soaking. A simple picture was developed to compare forward bias current to the EL signal. The result was unexpected: the product of the final current times the rise time was not constant before and after light soaking as expected from the concept of gain band width, but instead changed radically. The rise time t{sub x} increased by more than one order of magnitude while the final current I{sub f} did not change significantly with light soaking. On the other hand the I{sub f}t{sub x} product did hold close to a constant when only the applied voltage changed.

  1. Ultralight amorphous silicon alloy photovoltaic modules for space applications

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Chen, Englade; Fulton, C.; Myatt, A.; Woodyard, J. R.

    1987-01-01

    Ultralight and ultrathin, flexible, rollup monolithic PV modules have been developed consisting of multijunction, amorphous silicon alloys for either terrestrial or aerospace applications. The rate of progress in increasing conversion efficiency of stable multijunction and multigap PV cells indicates that arrays of these modules can be available for NASA's high power systems in the 1990's. Because of the extremely light module weight and the highly automated process of manufacture, the monolithic a-Si alloy arrays are expected to be strongly competitive with other systems for use in NASA's space station or in other large aerospace applications.

  2. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    SciTech Connect

    Dang, Z. Y.; Breese, M. B. H.; Lin, Y.; Tok, E. S.; Vittone, E.

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  3. Structural properties of amorphous silicon produced by electron irradiation

    SciTech Connect

    Yamasaki, J.; Takeda, S.

    1999-07-01

    The structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550 C.

  4. Comment on ``Electron drift mobility in doped amorphous silicon''

    NASA Astrophysics Data System (ADS)

    Overhof, H.; Silver, M.

    1989-05-01

    Experimental drift-mobility data obtained by different methods in doped amorphous silicon are compared. It is shown that the presence of a long-range random potential will lead to a modification of the drift mobility in one experiment while the corresponding values in other experiments are virtually unaffected. It is shown that this effect accounts for the apparent discrepancy between the results of these experiments rather than the shift of the mobility edge upon doping which was recently proposed by Street, Kakalios, and Hack [Phys. Rev. B 38, 5603 (1988)] in order to understand their data.

  5. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    NASA Astrophysics Data System (ADS)

    Dang, Z. Y.; Breese, M. B. H.; Lin, Y.; Tok, E. S.; Vittone, E.

    2014-05-01

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  6. Lithium concentration dependent structure and mechanics of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Sitinamaluwa, H. S.; Wang, M. C.; Will, G.; Senadeera, W.; Zhang, S.; Yan, C.

    2016-06-01

    A better understanding of lithium-silicon alloying mechanisms and associated mechanical behavior is essential for the design of Si-based electrodes for Li-ion batteries. Unfortunately, the relationship between the dynamic mechanical response and microstructure evolution during lithiation and delithiation has not been well understood. We use molecular dynamic simulations to investigate lithiated amorphous silicon with a focus to the evolution of its microstructure, phase composition, and stress generation. The results show that the formation of LixSi alloy phase is via different mechanisms, depending on Li concentration. In these alloy phases, the increase in Li concentration results in reduction of modulus of elasticity and fracture strength but increase in ductility in tension. For a LixSi system with uniform Li distribution, volume change induced stress is well below the fracture strength in tension.

  7. Amorphous silicon-carbon alloys and amorphous carbon from direct methane and ethylene activation by ECR

    SciTech Connect

    Conde, J.P.; Chu, V.; Giorgis, F.; Pirri, C.F.; Arekat, S.

    1997-07-01

    Hydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition. Hydrogen is introduced into the source resonance cavity as an excitation gas. Silane is introduced in the main chamber in the vicinity of the plasma stream, whereas the carbon source gases, methane or ethylene, are introduced either with the silane or with the hydrogen as excitation gases. The effect of the type of carbon-source gas, excitation gas mixture and silane-to-carbon source gas flow ratio on the deposition rate, bandgap, subgap density of states, spin density and hydrogen evolution are studied.

  8. Characterization of bias induced metastability of amorphous silicon thin film transistor based passive pixel sensor switch and its impact on biomedical x-ray imaging application

    NASA Astrophysics Data System (ADS)

    Sultana, Afrin; Safavian, N.; Izadi, M. H.; Karim, K. S.; Rowlands, J. A.

    2009-02-01

    Active Matrix Flat Panel Imagers (AMFPIs) based on amorphous silicon (a-Si:H) thin film transistor (TFT) array is the most promising technology for large area biomedical x-ray imaging. a-Si:H TFT exhibits a metastable shift in its characteristics when subject to prolonged gate bias that results in a change in its threshold voltage (VΤ) and a corresponding change in ON resistance (RON). If not properly accounted for, the VΤ shift can be a major constraint in imaging applications as it contributes to the fixed pattern noise in the imager. In this work, we investigated the timedependent shift in VΤ (ΔVΤ) of a-Si:H TFTs stressed with the same bipolar pulsed bias used for static (chest radiography, mammography, and static protein crystallography) and real time imaging (low dose fluoroscopy at 15, 30 and 60 frames/second, and dynamic protein crystallography). We used the well known power law model of time dependent ΔVT to estimate the change in RON over time. Our calculation showed that RON can be decreased ~ 0.03 % per frame and ~ 5 % over 10,000 hours at 30 frames/second. We verified the theoretical results with measurement data. The implication of TFT metastability on the performance (NPS, and DQE) of biomedical imagers is discussed.

  9. A magnesium/amorphous silicon passivating contact for n-type crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Wan, Yimao; Samundsett, Chris; Yan, Di; Allen, Thomas; Peng, Jun; Cui, Jie; Zhang, Xinyu; Bullock, James; Cuevas, Andres

    2016-09-01

    Among the metals, magnesium has one of the lowest work functions, with a value of 3.7 eV. This makes it very suitable to form an electron-conductive cathode contact for silicon solar cells. We present here the experimental demonstration of an amorphous silicon/magnesium/aluminium (a-Si:H/Mg/Al) passivating contact for silicon solar cells. The conduction properties of a thermally evaporated Mg/Al contact structure on n-type crystalline silicon (c-Si) are investigated, achieving a low resistivity Ohmic contact to moderately doped n-type c-Si (˜5 × 1015 cm-3) of ˜0.31 Ω cm2 and ˜0.22 Ω cm2 for samples with and without an amorphous silicon passivating interlayer, respectively. Application of the passivating cathode to the whole rear surface of n-type front junction c-Si solar cells leads to a power conversion efficiency of 19% in a proof-of-concept device. The low thermal budget of the cathode formation, its dopant-less nature, and the simplicity of the device structure enabled by the Mg/Al contact open up possibilities in designing and fabricating low-cost silicon solar cells.

  10. Improved amorphous silicon alloy solar cells for module fabrication

    SciTech Connect

    Banerjee, A.; Yang, J.; Guha, S.

    1997-07-01

    An initial conversion efficiency of 13.5% has been obtained on a triple-junction triple-bandgap device fabricated in a large-area deposition reactor capable of producing one-square-foot modules. The intrinsic layer of the top cell is a wide bandgap amorphous silicon alloy. The middle and bottom cells employ high quality amorphous silicon-germanium alloy. The high efficiency of the triple-junction cell is attributed to the relative reduction of the optical loss in the top tunnel junction and the improvement in the quality of the middle and bottom component cells. Triple-junction devices with initial efficiency of 13.3% have shown saturation at 11.6% after light soaking. Modules of aperture area 909 cm{sup 2} have been fabricated using an assembly process similar to the one being currently used in their manufacturing line. The module design consists of one large-area, high-current monolithic multijunction device. The status of the small-area devices and modules is described.

  11. High thermal conductivity of a hydrogenated amorphous silicon film

    NASA Astrophysics Data System (ADS)

    Feldman, J. L.; Liu, Xiao; Cahill, D. G.; Crandall, R. S.; Bernstein, Noam; Photiadis, D. M.; Mehl, M. J.; Papaconstantopoulos, D. A.; Yang, Ho-Soon

    2009-03-01

    We measured the thermal conductivity κ of an 80 μm thick hydrogenated amorphous silicon (a-Si:H) film from 80,to room temperature with the 3φ method and at room temperature with the time-domain thermoreflectance (TDTR) method. The a-Si:H sample with 1 at.% hydrogen was prepared by hot-wire chemical-vapor deposition (HWCVD), a procedure which was found previously to produce superior material properties with a near absent atomic tunneling states that are ubiquitous in glasses. We find that κ is higher than any of the previous temperature dependent measurements, and shows a strong phonon mean free path dependence. We also performed numerical calculations on three 1000 atom models using Kubo theory and a tight binding electronic structure method. Due to the restraints of the TDTR results on low frequency extrapolations of calculated phonon diffusivities, the Kubo thermal conductivityis seen to be too small to explain our experiments. We conclude that the HWCVD a-Si:H sample has superior structural ordering relative to any amorphous silicon previously studied.

  12. Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

    NASA Technical Reports Server (NTRS)

    Kung, K. T.-Y.; Nicolet, M.-A.; Suni, I.

    1984-01-01

    The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.

  13. Sputtered pin amorphous silicon semi-conductor device and method therefor

    DOEpatents

    Moustakas, Theodore D.; Friedman, Robert A.

    1983-11-22

    A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

  14. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  15. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors.

  16. Electron-beam-induced information storage in hydrogenated amorphous silicon device

    DOEpatents

    Yacobi, Ben G.

    1986-01-01

    A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.

  17. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    SciTech Connect

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  18. Mechanism of the growth of amorphous and microcrystalline silicon from silicon tetrafluoride and hydrogen

    NASA Astrophysics Data System (ADS)

    Okada, Y.; Chen, J.; Campbell, I. H.; Fauchet, P. M.; Wagner, S.

    1990-02-01

    We study the growth of amorphous (a-Si:H,F) and of microcrystalline (μc-Si) silicon over trench patterns in crystalline silicon substrates. We vary the conditions of the SiF4-H2 glow discharge from deposition to etching. All deposited films form lips at the trench mouth and are uniformly thick on the trench walls. Therefore, surface diffusion is not important. The results of a Monte Carlo simulation suggest that film growth is governed by a single growth species with a low (˜0.2) sticking coefficient, in combination with a highly reactive etching species.

  19. 360-degree three-dimensional flat panel display using holographic optical elements

    NASA Astrophysics Data System (ADS)

    Yabu, Hirofumi; Takeuchi, Yusuke; Yoshimoto, Kayo; Takahashi, Hideya; Yamada, Kenji

    2015-03-01

    We proposed the 360-degree 3D display system which is composed of a flat panel display, a light control film, and holographic optical element (HOE). The HOE is a diffraction grating which is made by holography technique. HOE lens can be produced on the thin polygonal glass plate. The light control film and HOE lenses are used to control the direction of light from the flat panel display in our system. The size of proposed system depends on the size of the flat panel display is because other parts of proposed system are thin and placed on the screen of the flat panel display. HOE lenses and a light control film are used to control lights from multiple pixels of a flat panel display to multiple viewpoints. To display large 3D images and to increase viewpoints, we divided parallax images into striped images and distributed them on the display for multiple viewpoints. Therefore, observers can see the large 3D image around the system. To verify the effectiveness of the proposed system, we made the experimental system. To verify the effectiveness of the proposed system, we constructed the part of the proposed system. The experimental system is composed of the liquid crystal display (LCD), prototype HOE lenses, and light control films. We confirmed that experimental system can display two images to different viewpoints. This paper describes the configuration of the proposed system, and also describes the experimental result.

  20. Monolithic amorphous silicon modules on continuous polymer substrate

    SciTech Connect

    Grimmer, D.P. )

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  1. Staebler-Wronski effect in hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Prasad, Rajendra; Shenoy, Subodh R.

    1996-02-01

    A scenario for the Staebler-Wronski (SW) photoconductivity σ( t) in hydrogenated amorphous silicon is modeled by the kenetics of the dangling bond density d( t). Hydrogen atoms (H) on SiSi bonds are induced to hop by the illumination-triggered breakage of weak neighboring bonds ( d(t) ∼ t {1}/{3}). The breakage leads to enhanced H diffusion over disordered barriers, which breaks further bonds, inducing further diffusion and causing a d( t) rise as a stretched exponential. d( t) then saturates to a temperature-dependent value, as breakage is limited by bond-pair thermal healing. Above a temperature TSW, thermal bond-pair healing beats breakage, and σ( t) recovers.

  2. High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

    PubMed Central

    Esmaeili-Rad, Mohammad R.; Salahuddin, Sayeef

    2013-01-01

    One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3–5 ms, thus making this heterojunction roughly 10X faster. A photoresponsivity of 210 mA/W is measured at green light, the wavelength used in commercial imaging systems, which is 2−4X larger than that of a-Si and best reported MoS2 devices. The device could find applications in large area electronics, such as biomedical imaging, where a fast response is critical. PMID:23907598

  3. Current noise measurements of surface defect states in amorphous silicon

    SciTech Connect

    West, P.W.; Kakalios, J.

    1999-07-01

    Measurements of conductance fluctuations in coplanar hydrogenated amorphous silicon (a-Si:H) are reported as a function of surface etching treatments. The noise power spectrum displays a broadened Lorentzian peak, associated with surface damage by CF{sub 4} reactive ion etching (RIE), whereas surface etches using ion milling or wet chemicals remove the Lorentzian spectral feature and only a 1/f spectral form for frequency f is observed. The Lorentzian spectral feature can be explained by trapping-detrapping from surface states induced by the RIE etch, which cause fluctuations in the depletion width of the space charge region near the film surface. The thermally activated Lorentzian corner frequency is a measure of the degree of band bending and the Fermi energy at the thin film surface.

  4. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect

    Guha, S. )

    1992-09-01

    This report describes research on semiconductor and non-semiconductor materials to enhance the performance of multi-band-gap, multijunction panel with an area greater than 900 cm[sup 2] by 1992. Double-junction and triple-junction cells are mode on a Ag/ZnO back reflector deposited on stainless steel substrates. An a-SiGe alloy is used for the i-layer in the bottom and the middle cells; the top cell uses an amorphous silicon alloy. After the evaporation of an antireflection coating, silver grids and bus bars are put on the top surface and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a 1-ft[sup 2] monolithic module.

  5. Light-Induced Metastability in Pure and Hydrogenated Amorphous Silicon

    SciTech Connect

    Queen, D. R.; Liu, X.; Karel, J.; Wang, Q.; Crandall, Richard S.; Metcalf, T. H.; Hellman, F.

    2015-10-01

    Light soaking is found to increase the specific heat C and internal friction Q-1 of pure (a-Si) and hydrogenated (a-Si:H) amorphous silicon. At the lowest temperatures, the increases in C and Q-1 are consistent with an increased density of two-level systems (TLS). The light-induced increase in C persists to room temperature. Neither the sound velocity nor shear modulus change with light soaking indicating that the Debye specific heat is unchanged which suggests that light soaking creates localized vibrational modes in addition to TLS. The increase can be reversibly added and removed by light soaking and annealing, respectively, suggesting that it is related to the Staebler-Wronski effect (SWE), even in a-Si without H, and involves a reversible nanoscale structural rearrangement that is facilitated by, but does not require, H to occur.

  6. Light-induced metastability in pure and hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Queen, D. R.; Liu, X.; Karel, J.; Wang, Q.; Crandall, R. S.; Metcalf, T. H.; Hellman, F.

    2015-10-01

    Light soaking is found to increase the specific heat C and internal friction Q-1 of pure (a-Si) and hydrogenated (a-Si:H) amorphous silicon. At the lowest temperatures, the increases in C and Q-1 are consistent with an increased density of two-level systems (TLS). The light-induced increase in C persists to room temperature. Neither the sound velocity nor shear modulus change with light soaking indicating that the Debye specific heat is unchanged which suggests that light soaking creates localized vibrational modes in addition to TLS. The increase can be reversibly added and removed by light soaking and annealing, respectively, suggesting that it is related to the Staebler-Wronski effect (SWE), even in a-Si without H, and involves a reversible nanoscale structural rearrangement that is facilitated by, but does not require, H to occur.

  7. Radiation Resistance Studies of Amorphous Silicon Alloy Photovoltaic Materials

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1994-01-01

    The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys was investigated. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below lE14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

  8. Hydrogenated Amorphous Silicon (a-Si:H) Colloids

    SciTech Connect

    Harris, Justin T.; Hueso, Jose L.; Korgel, Brian A.

    2010-12-14

    Colloidal particles of hydrogenated amorphous silicon (a-Si:H) were synthesized by decomposition of trisilane (Si{sub 3}H{sub 8}) in supercritical n-hexane (sc-hexane) at temperatures ranging from 380 to 550 °C. The reaction temperature, pressure and Si{sub 3}H{sub 8} concentration have a significant influence on the average particle size, Si bond order and hydrogen content. The particle diameter could be varied from 170 nm to 1.7 μm, with hydrogen loadings between 10% and 58%. Raman spectroscopy of the particles revealed significant differences in Si bond order that correlated with hydrogen content, with the lowest reaction temperatures yielding particles with the least structural order and most associated hydrogen. Particles synthesized at temperatures higher than 420 °C had sufficient bond order to allow crystallization under the Raman laser probe.

  9. ESR studies on hot-wire amorphous silicon

    SciTech Connect

    Unold, T.; Mahan, A.H.

    1997-07-01

    The authors measure a series of hot-wire (HW) amorphous silicon films grown with hydrogen contents C{sub H} varying between 0.5--17 at.%. From constant photocurrent method (CPM) measurements and the steady-state photocarrier grating method (SSPG) they find good agreement with previous measurements on similar hot-wire films. Electron spin resonance measurements on the same samples, however, yield significantly higher spin densities than expected. A thickness series indicates a highly defective layer close to the substrate interface. They propose that this defective layer may be due to excessive out diffusion of hydrogen during growth at high temperatures, as seen by secondary ion mass spectroscopy. ESR measurements on light-degraded samples indicate an improved stability of samples with C{sub H} < 9 at.%.

  10. Interstitial trapped hydrogen molecules in PECVD amorphous silicon

    SciTech Connect

    Borzi, R.; Mascarenhas, F.; Fedders, P.A.; Leopold, D.J.; Norberg, R.E.; Wickboldt, P.; Paul, W.

    1999-07-01

    New NMR measurements show that interstitial T site-trapped molecular hydrogen can amount to more than one third of the contained hydrogen in high quality PECVD amorphous silicon. Microvoid-contained dense molecular hydrogen is negligible in these good films. Experiments on a sequence of hydrogenated and/or deuterated a-Si films have characterized individually-trapped molecular HD and D{sub 2} in films deposited from SiD{sub 4}, and from SiH{sub 4}+D{sub 2}. The T site-trapped molecular hydrogen fraction observed here is larger than previously reported because of recent efforts to measure very slowly relaxing molecular components and the employment of radiofrequency pulse sequences to detect ortho-D{sub 2} with nuclear spin I = 2. The population of interstitially trapped molecular hydrogen increases with increasing photovoltaic quality over a range of an order of magnitude in photoresponse product {eta}{mu}{tau}. Above 200 K, hopping transport of molecular hydrogen among the amorphous equivalent of interstitial T sites occurs with an activation energy near 50 meV.

  11. Super multi-view display with a lower resolution flat-panel display.

    PubMed

    Takaki, Yasuhiro; Tanaka, Kosuke; Nakamura, Junya

    2011-02-28

    A lenticular-type super multi-view (SMV) display normally requires an ultra high-resolution flat-panel display. To reduce this resolution requirement, two or more views are generated around each eye with an interval smaller than the pupil diameter. Cylindrical lenses constituting a lenticular lens project a group of pixels of the flat-panel display to generate a group of viewing zones. Pixel groups generating left and right viewing zones through the same cylindrical lens are partitioned to separate the two zones. The left and right pixel groups for different cylindrical lenses are interlaced horizontally. A prototype SMV display is demonstrated. PMID:21369242

  12. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    SciTech Connect

    Abdulraheem, Yaser; Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef

    2014-05-15

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  13. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  14. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  15. Temperature dependence of hydrogenated amorphous silicon solar cell performances

    NASA Astrophysics Data System (ADS)

    Riesen, Y.; Stuckelberger, M.; Haug, F.-J.; Ballif, C.; Wyrsch, N.

    2016-01-01

    Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energy yield, we measured the temperature and irradiance dependence of the maximum power output (Pmpp), the fill factor (FF), the short-circuit current density (Jsc), and the open-circuit voltage (Voc) for four series of cells fabricated with different deposition conditions. The parameters varied during plasma-enhanced chemical vapor deposition (PE-CVD) were the power and frequency of the PE-CVD generator, the hydrogen-to-silane dilution during deposition of the intrinsic absorber layer (i-layer), and the thicknesses of the a-Si:H i-layer and p-type hydrogenated amorphous silicon carbide layer. The results show that the temperature coefficient of the Voc generally varies linearly with the Voc value. The Jsc increases linearly with temperature mainly due to temperature-induced bandgap reduction and reduced recombination. The FF temperature dependence is not linear and reaches a maximum at temperatures between 15 °C and 80 °C. Numerical simulations show that this behavior is due to a more positive space-charge induced by the photogenerated holes in the p-layer and to a recombination decrease with temperature. Due to the FF(T) behavior, the Pmpp (T) curves also have a maximum, but at a lower temperature. Moreover, for most series, the cells with the highest power output at STC also have the best energy yield. However, the Pmpp (T) curves of two cells with different i-layer thicknesses cross each other in the operating cell temperature range, indicating that the cell with the highest power output could, for instance, have a lower energy yield than the other cell. A simple energy-yield simulation for the light-soaked and annealed states shows that for Neuchâtel (Switzerland) the best cell at STC also has the best energy

  16. Nanopattern-guided growth of single-crystal silicon on amorphous substrates and high-performance sub-100 nm thin-film transistors for three-dimensional integrated circuits

    NASA Astrophysics Data System (ADS)

    Gu, Jian

    This thesis explores how nanopatterns can be used to control the growth of single-crystal silicon on amorphous substrates at low temperature, with potential applications on flat panel liquid-crystal display and 3-dimensional (3D) integrated circuits. I first present excimer laser annealing of amorphous silicon (a-Si) nanostructures on thermally oxidized silicon wafer for controlled formation of single-crystal silicon islands. Preferential nucleation at pattern center is observed due to substrate enhanced edge heating. Single-grain silicon is obtained in a 50 nm x 100 nm rectangular pattern by super lateral growth (SLG). Narrow lines (such as 20-nm-wide) can serve as artificial heterogeneous nucleation sites during crystallization of large patterns, which could lead to the formation of single-crystal silicon islands in a controlled fashion. In addition to eximer laser annealing, NanoPAtterning and nickel-induced lateral C&barbelow;rystallization (NanoPAC) of a-Si lines is presented. Single-crystal silicon is achieved by NanoPAC. The line width of a-Si affects the grain structure of crystallized silicon lines significantly. Statistics show that single-crystal silicon is formed for all lines with width between 50 nm to 200 nm. Using in situ transmission electron microscopy (TEM), nickel-induced lateral crystallization (Ni-ILC) of a-Si inside a pattern is revealed; lithography-constrained single seeding (LISS) is proposed to explain the single-crystal formation. Intragrain line and two-dimensional defects are also studied. To test the electrical properties of NanoPAC silicon films, sub-100 nm thin-film transistors (TFTs) are fabricated using Patten-controlled crystallization of Ṯhin a-Si channel layer and H&barbelow;igh temperature (850°C) annealing, coined PaTH process. PaTH TFTs show excellent device performance over traditional solid phase crystallized (SPC) TFTs in terms of threshold voltage, threshold voltage roll-off, leakage current, subthreshold swing, on

  17. Analysis of a free-running synchronization artifact correction for MV-imaging with aSi:H flat panels

    SciTech Connect

    Mooslechner, Michaela; Mitterlechner, Bernhard; Weichenberger, Harald; Sedlmayer, Felix; Deutschmann, Heinz; Huber, Stefan

    2013-03-15

    Purpose: Solid state flat panel electronic portal imaging devices (EPIDs) are widely used for megavolt (MV) photon imaging applications in radiotherapy. In addition to their original purpose in patient position verification, they are convenient to use in quality assurance and dosimetry to verify beam geometry and dose deposition or to perform linear accelerator (linac) calibration procedures. However, native image frames from amorphous silicon (aSi:H) detectors show a range of artifacts which have to be eliminated by proper correction algorithms. When a panel is operated in free-running frame acquisition mode, moving vertical stripes (periodic synchronization artifacts) are a disturbing feature in image frames. Especially for applications in volumetric intensity modulated arc therapy (VMAT) or motion tracking, the synchronization (sync) artifacts are the limiting factor for potential and accuracy since they become even worse at higher frame rates and at lower dose rates, i.e., linac pulse repetition frequencies (PRFs). Methods: The authors introduced a synchronization correction method which is based on a theoretical model describing the interferences of the panel's readout clocking with the linac's dose pulsing. Depending on the applied PRF, a certain number of dose pulses is captured per frame which is readout columnwise, sequentially. The interference of the PRF with the panel readout is responsible for the period and the different gray value levels of the sync stripes, which can be calculated analytically. Sync artifacts can then be eliminated multiplicatively in precorrected frames without additional information about radiation pulse timing. Results: For the analysis, three aSi:H EPIDs of various types were investigated with 6 and 15 MV photon beams at varying PRFs of 25, 50, 100, 200, and 400 pulses per second. Applying the sync correction at panels with gadolinium oxysulfide scintillators improved single frame flood field image quality drastically

  18. Studies of pulsed laser melting and rapid solidification using amorphous silicon

    SciTech Connect

    Lowndes, D.H.; Wood, R.F.

    1984-06-01

    Pulsed-laser melting of ion implantation-amorphized silicon layers, and subsequent solidification were studied. Measurements of the onset of melting of amorphous silicon layers and of the duration of melting, and modified melting model calculations demonstrated that the thermal conductivity, K/sub a/, of amorphous silicon is very low (K/sub a/ approx. = 0.02 W/cm-K). K/sub a/ is also the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation. TEM indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model is presented. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. The bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or uv nanosecond laser pulses) cannot be explained using purely thermodynamic considerations.

  19. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  20. RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

    DOEpatents

    Jeffery, F.R.; Shanks, H.R.

    1980-08-26

    A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  1. Optical losses in amorphous silicon solar cells due to back reflectors

    SciTech Connect

    Sopori, B.L.; Madjdpour, J.; Von Roedern, B.; Chen, W.; Hegedus, S.S.

    1997-07-01

    The authors have used a new numerical model and here present initial results on how texturing and backreflectors affect the maximum achievable short-circuit current densities in amorphous silicon solar cells.

  2. Effect of Various Plasmas on Vacuum Deposited Amorphous and Microscrystal Silicon

    NASA Astrophysics Data System (ADS)

    Fang, P. H.; Huan, Zhong; Gao, Yinqun; Schubert, C. C.; Kinnier, J. H.

    1983-03-01

    A gaseous plasma of oxygen, nitrogen, hydrogen and air has been used to treat amorphous and microcrystal silicon. The resultant effect, as measured by the photovoltaic characteristics of solar cells made of these materials, is that all of these gases can be effectively incorporated into the amorphous and microcrystal silicon to produce a beneficial photovoltaic effect. There is some difference in thermal stability; nitrogen is very similar to hydrogen and is higher in stability, and oxygen and air are somewhat lower.

  3. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111)

    NASA Astrophysics Data System (ADS)

    Käshammer, Peter; Borgardt, Nikolai I.; Seibt, Michael; Sinno, Talid

    2016-09-01

    Molecular dynamics based on the empirical Tersoff potential was used to simulate the deposition of amorphous silicon and germanium on silicon(111) at various deposition rates and temperatures. The resulting films were analyzed quantitatively by comparing one-dimensional atomic density profiles to experimental measurements. It is found that the simulations are able to capture well the structural features of the deposited films, which exhibit a gradual loss of crystalline order over several monolayers. A simple mechanistic model is used to demonstrate that the simulation temperature may be used to effectively accelerate the surface relaxation processes during deposition, leading to films that are consistent with experimental samples grown at deposition rates many orders-of-magnitude slower than possible in a molecular dynamics simulation.

  4. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

    SciTech Connect

    Alexandrov, P. A. Demakov, K. D.; Shemardov, S. G.; Kuznetsov, Yu. Yu.

    2013-02-15

    Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

  5. ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES

    SciTech Connect

    Ridgeway, R G; Hegedus, S S; Podraza, N J

    2012-08-31

    Air Products set out to investigate the impact of additives on the deposition rate of both CSi and Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

  6. Amorphous silicon cell array powered solar tracking apparatus

    DOEpatents

    Hanak, Joseph J.

    1985-01-01

    An array of an even number of amorphous silicon solar cells are serially connected between first and second terminals of opposite polarity. The terminals are connected to one input terminal of a DC motor whose other input terminal is connected to the mid-cell of the serial array. Vane elements are adjacent the end cells to selectively shadow one or the other of the end cells when the array is oriented from a desired attitude relative to the sun. The shadowing of one cell of a group of cells on one side of the mid-cell reduces the power of that group substantially so that full power from the group of cells on the other side of the mid-cell drives the motor to reorient the array to the desired attitude. The cell groups each have a full power output at the power rating of the motor. When the array is at the desired attitude the power output of the two groups of cells balances due to their opposite polarity so that the motor remains unpowered.

  7. Hot wire deposited hydrogenated amorphous silicon solar cells

    SciTech Connect

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S.

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  8. The importance of inhomogeneities in hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Agarwal, Satish

    2014-03-01

    We shall discuss how the heterogeneities present in hydrogenated amorphous silicon (a-Si:H) can be taken into account by considering the long range potential fluctuations (LRPF), arising from them. Using these ideas we try to understand several challenging puzzles, some of them remaining unresolved till now. These range, from why undoped a-Si:H is n-type, to why the light soaking (LS) degrades boron doped a-Si:H films faster than the undoped or the phosphorous doped films, and why hole injection favors larger degradation than electron injection. Also, the failure of reciprocity and the saturation of the number of dangling bonds created by LS at the low value of about 1017 cm-3 can be explained. The improved stability of a-Si:H containing nc-Si has been attributed to the LRPF assisted diffusion of photo carriers to nc-Si and recombination there. These and other similar observations will be taken up. Work supported by CSIR, New Delhi.

  9. Power change in amorphous silicon technology by low temperature annealing

    NASA Astrophysics Data System (ADS)

    Mittal, Ankit; Rennhofer, Marcus; Dangel, Angelika; Duman, Bogdan; Schlosser, Victor

    2015-07-01

    Amorphous silicon (a-Si) is one of the best established thin-film solar-cell technologies. Despite its long history of research, it still has many critical issues because of its defect rich material and its susceptibility to degrade under light also called as Staebler-Wronski effect (SWE). This leads to an increase in the defect density of a-Si, but as a metastable effect it can be completely healed at temperatures above 170 °C. Our study is focused on investigating the behavior of annealing of different a-Si modules under low temperature conditions below 80 °C indicated by successive change of module power. These conditions reflect the environmental temperature impact of the modules in the field, or integrated in buildings as well. The power changes were followed by STC power rating and investigation of module-power evolution under low irradiance conditions at 50 W/m2. Our samples were recovered close to their initial state of power, reaching as high as 99% from its degraded value. This shows the influence of low temperature annealing and light on metastable module behavior in a-Si thin-film modules.

  10. Tritiated Amorphous Silicon: Insights into the Staebler-Wronski Mechanism

    SciTech Connect

    Stradins, P.; Branz, H. M.; Whitaker, J.; Viner, J.; Taylor, P. C.; Johnson, E.; Kherani, N.; Zukotynski, S.

    2005-01-01

    Hydrogen, though essential for device-quality amorphous silicon, likely contributes to the light-induced degradation process (Staebler-Wronski effect) that reduces the solar cell efficiency by about 4 absolute percent. We are testing the role of hydrogen by using its isotope tritium. When tritium bonded to Si spontaneously decays into inert helium-3, it should leave behind the Si dangling bond defect. We have studied degradation due to tritium and note its resemblance to the Staebler-Wronski effect. Surprisingly, 100x fewer defects are created than expected from the tritium decay rate, suggesting a mechanism that heals most of the defects, even at temperatures down to 4 K. We consider different mechanisms for the thermal and athermal healing processes (e.g. motion of hydrogen, effect of beta-electrons, decay of hydrogen-tritium molecules). Our findings shed new light on the degradation mechanism in a Si:H and help reveal the role of hydrogen and structural rearrangements near a newly created defect.

  11. Temperature dependent deformation mechanisms in pure amorphous silicon

    SciTech Connect

    Kiran, M. S. R. N. Haberl, B.; Williams, J. S.; Bradby, J. E.

    2014-03-21

    High temperature nanoindentation has been performed on pure ion-implanted amorphous silicon (unrelaxed a-Si) and structurally relaxed a-Si to investigate the temperature dependence of mechanical deformation, including pressure-induced phase transformations. Along with the indentation load-depth curves, ex situ measurements such as Raman micro-spectroscopy and cross-sectional transmission electron microscopy analysis on the residual indents reveal the mode of deformation under the indenter. While unrelaxed a-Si deforms entirely via plastic flow up to 200 °C, a clear transition in the mode of deformation is observed in relaxed a-Si with increasing temperature. Up to 100 °C, pressure-induced phase transformation and the observation of either crystalline (r8/bc8) end phases or pressure-induced a-Si occurs in relaxed a-Si. However, with further increase of temperature, plastic flow rather than phase transformation is the dominant mode of deformation. It is believed that the elevated temperature and pressure together induce bond softening and “defect” formation in structurally relaxed a-Si, leading to the inhibition of phase transformation due to pressure-releasing plastic flow under the indenter.

  12. Progress in amorphous silicon solar cells produced by reactive sputtering

    NASA Astrophysics Data System (ADS)

    Moustakas, T. D.

    The photovoltaic properties of reactively sputtered amorphous silicon are reviewed and it is shown that efficient PIN solar cells can be fabricated by the method of sputtering. The photovoltaic properties of the intrinsic films correlate with their structural and compositional inhomogeneities. Hydrogen incorporation and small levels of phosphorus and boron impurities also affect the photovoltaic properties through reduction of residual dangling bond related defects and modification of their occupation. The optical and transport properties of the doped P and N-films were found to depend sensitively on the amount of hydrogen and boron or phosphorus incorporation into the films as well as on their degree of crystallinity. Combination of the best intrinsic and doped films leads to PIN solar cell structures generating J(sc) of 13 mA/sq cm and V(oc) of between 0.85 to 0.95 volts. The efficiency of these devices, 5 to 6 percent, is limited by the low FF, typically about 50 percent. As a further test to the potential of this technology efficient tandem solar cell structures were fabricated, and device design concepts, such as the incorporation of optically reflective back contacts were tested.

  13. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Keya, Kimitaka; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2015-09-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  14. Hydrogenated amorphous silicon thin film anode for proton conducting batteries

    NASA Astrophysics Data System (ADS)

    Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

    2016-01-01

    Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

  15. High efficiency neutron sensitive amorphous silicon pixel detectors

    SciTech Connect

    Mireshghi, A.; Cho, G.; Drewery, J.S.; Hong, W.S.; Jing, T.; Lee, H.; Kaplan, S.N.; Perez-Mendez, V.

    1993-11-01

    A multi-layer a-Si:H based thermal neutron detector was designed, fabricated and simulated by Monte Carlo method. The detector consists of two PECVD deposited a-Si:H pin detectors interfaced with coated layers of Gd, as a thermal neutron converter. Simulation results indicate that a detector consisting of 2 Gd films with thicknesses of 2 and 4 {mu}m, sandwiched properly with two layers of sufficiently thick ({approximately}30{mu}m) amorphous silicon diodes, has the optimum parameters. The detectors have an intrinsic efficiency of about 42% at a threshold setting of 7000 electrons, with an expected average signal size of {approximately}12000 electrons which is well above the noise. This efficiency will be further increased to nearly 63%, if we use Gd with 50% enrichment in {sup 157}Gd. We can fabricate position sensitive detectors with spatial resolution of 300 {mu}m with gamma sensitivity of {approximately}1 {times} 10{sup {minus}5}. These detectors are highly radiation resistant and are good candidates for use in various application, where high efficiency, high resolution, gamma insensitive position sensitive neutron detectors are needed.

  16. Laminated Amorphous Silicon Neutron Detector (pre-print)

    SciTech Connect

    Harry McHugh, Howard Branz, Paul Stradins, and Yueqin Xu

    2009-01-29

    An internal R&D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

  17. Electron spin resonance in amorphous silicon doped with Gd

    NASA Astrophysics Data System (ADS)

    Castilho, J. H.; Barberis, G. E.; Rettori, C.; Marques, F. C.; Chambouleyron, I.; Alvarez, F.

    1989-04-01

    ESR experiments on Gd impurities in amorphous silicon between liquid-He and room temperatures show three resonances which could be ascribed to paramagnetic dangling bonds (g=2.0055+/-0.0005), to Gd 8S7/2 states (g=1.997+/-0.005), and to a new paramagnetic center (g=2.10+/-0.05) associated with the presence of Gd atoms. For low-Gd-concentration samples the intensity of the resonance due to dangling bonds decreases as the Gd concentration increases and the intensity of the new paramagnetic center is found to increase with increasing temperature. These results indicate, as we recently found for other rare-earth-element impurities in a-Si, that a fraction of the Gd atoms act as acceptor impurities with associated loosely bound holes in the a-Si valence-band tail which are responsible for the resonance of the new paramagnetic center observed at a g value of 2.10+/-0.05.

  18. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    PubMed

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.

  19. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    PubMed

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices. PMID:27227369

  20. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    NASA Astrophysics Data System (ADS)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  1. Si-H bond dynamics in hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( <2.5cm-1 linewidth) of the 0→1 and 1→2 vibrational transitions within the extensively inhomogeneously broadened ( 78cm-1 linewidth) Si-H vibrational band. There is no spectral diffusion evident in correlation spectra obtained at 0.2, 1, and 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  2. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    NASA Astrophysics Data System (ADS)

    Wan, Yimao; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-01

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiNx) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiNx stack, recombination current density J0 values of 9, 11, 47, and 87 fA/cm2 are obtained on 10 Ω.cm n-type, 0.8 Ω.cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J0 on n-type 10 Ω.cm wafers is further reduced to 2.5 ± 0.5 fA/cm2 when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiNx stack is thermally stable at 400 °C in N2 for 60 min on all four c-Si surfaces. Capacitance-voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiNx stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  3. Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions

    SciTech Connect

    Newby, Pascal J.; Canut, Bruno; Bluet, Jean-Marie; Lysenko, Vladimir; Gomes, Severine; Isaiev, Mykola; Burbelo, Roman; Chantrenne, Patrice; Frechette, Luc G.

    2013-07-07

    In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first time such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 Degree-Sign C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.

  4. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  5. New results on the microstructure of amorphous silicon as observed by internal friction

    SciTech Connect

    Crandall, R.S.; Mahan, A.H.; Iwaniczko, E.; Jones, K.M.; Liu, X.; White, B.E. Jr.; Pohl, R.O.

    1997-07-01

    The authors have measured the low temperature internal friction (Q{sup {minus}1}) of amorphous silicon (a-Si) films. Electron-beam evaporation leads to the well-known temperature-independent Q{sub 0}{sup {minus}1} plateau common to all amorphous solids. For hydrogenated amorphous silicon (a-Si:H) with about 1 at.% H produced by hot wire chemical vapor deposition, however, the value of Q{sub 0}{sup {minus}1} is over two hundred times smaller than for e-beam a-Si. This is the first observation of an amorphous solid without any significant low energy excitations. This finding offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.

  6. A novel heuristic for optimization aggregate production problem: Evidence from flat panel display in Malaysia

    NASA Astrophysics Data System (ADS)

    Al-Kuhali, K.; Hussain M., I.; Zain Z., M.; Mullenix, P.

    2015-05-01

    Aim: This paper contribute to the flat panel display industry it terms of aggregate production planning. Methodology: For the minimization cost of total production of LCD manufacturing, a linear programming was applied. The decision variables are general production costs, additional cost incurred for overtime production, additional cost incurred for subcontracting, inventory carrying cost, backorder costs and adjustments for changes incurred within labour levels. Model has been developed considering a manufacturer having several product types, which the maximum types are N, along a total time period of T. Results: Industrial case study based on Malaysia is presented to test and to validate the developed linear programming model for aggregate production planning. Conclusion: The model development is fit under stable environment conditions. Overall it can be recommended to adapt the proven linear programming model to production planning of Malaysian flat panel display industry.

  7. Flat panel display using Ti-Cr-Al-O thin film

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2002-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  8. Stabilization of amorphous structure in silicon thin film by adding germanium

    SciTech Connect

    Makino, Nobuaki; Shigeta, Yukichi

    2015-06-21

    The stabilization of the amorphous structure in amorphous silicon film by adding Ge atoms was studied using Raman spectroscopy. Amorphous Si{sub 1−x}Ge{sub x} (x = 0.0, 0.03, 0.14, and 0.27) films were deposited on glass substrates from electron beam evaporation sources and annealed in N{sub 2} atmosphere. The change in the amorphous states and the phase transition from amorphous to crystalline were characterized using the TO, LO, and LA phonons in the Raman spectra. The temperature of the transition from the amorphous phase to the crystalline phase was higher for the a-Si{sub 1−x}Ge{sub x} (x = 0.03, 0.14) films, and the crystallization was hindered. The reason why the addition of a suitable quantity of Ge atoms into the three-dimensional amorphous silicon network stabilizes its amorphous structure is discussed based on the changes in the Raman signals of the TO, LO, and LA phonons during annealing. The characteristic bond length of the Ge atoms allows them to stabilize the random network of the amorphous Si composed of quasi-tetrahedral Si units, and obstruct its rearrangement.

  9. Formation of amorphous silicon by light ion damage

    SciTech Connect

    Shih, Y.C.

    1985-12-01

    Amorphization by implantation of boron ions (which is the lightest element generally used in I.C. fabrication processes) has been systematically studied for various temperatures, various voltages and various dose rates. Based on theoretical considerations and experimental results, a new amorphization model for light and intermediate mass ion damage is proposed consisting of two stages. The role of interstitial type point defects or clusters in amorphization is emphasized. Due to the higher mobility of interstitials out-diffusion to the surface particularly during amorphization with low energy can be significant. From a review of the idealized amorphous structure, diinterstitial-divacancy pairs are suggested to be the embryos of amorphous zones formed during room temperature implantation. The stacking fault loops found in specimens implanted with boron at room temperature are considered to be the origin of secondary defects formed during annealing.

  10. High-performance flat-panel solar thermoelectric generators with high thermal concentration.

    PubMed

    Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

    2011-05-01

    The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m(-2)) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity.

  11. Tracking brachytherapy sources using emission imaging with one flat panel detector

    SciTech Connect

    Song Haijun; Bowsher, James; Das, Shiva; Yin Fangfang

    2009-04-15

    This work proposes to use the radiation from brachytherapy sources to track their dwell positions in three-dimensional (3D) space. The prototype device uses a single flat panel detector and a BB tray. The BBs are arranged in a defined pattern. The shadow of the BBs on the flat panel is analyzed to derive the 3D coordinates of the illumination source, i.e., the dwell position of the brachytherapy source. A kilovoltage x-ray source located 3.3 m away was used to align the center BB with the center pixel on the flat panel detector. For a test plan of 11 dwell positions, with an Ir-192 high dose rate unit, one projection was taken for each dwell point, and locations of the BB shadows were manually identified on the projection images. The 3D coordinates for the 11 dwell positions were reconstructed based on two BBs. The distances between dwell points were compared with the expected values. The average difference was 0.07 cm with a standard deviation of 0.15 cm. With automated BB shadow recognition in the future, this technique possesses the potential of tracking the 3D trajectory and the dwell times of a brachytherapy source in real time, enabling real time source position verification.

  12. High-performance flat-panel solar thermoelectric generators with high thermal concentration.

    PubMed

    Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

    2011-07-01

    The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m(-2)) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity. PMID:21532584

  13. MTF analysis for coded aperture imaging in a flat panel display

    NASA Astrophysics Data System (ADS)

    Suh, Sungjoo; Han, Jae-Joon; Park, Dusik

    2014-09-01

    In this paper, we analyze the modulation transfer function (MTF) of coded aperture imaging in a flat panel display. The flat panel display with a sensor panel forms lens-less multi-view cameras through the imaging pattern of the modified redundant arrays (MURA) on the display panel. To analyze the MTF of the coded aperture imaging implemented on the display panel, we first mathematically model the encoding process of coded aperture imaging, where the projected image on the sensor panel is modeled as a convolution of the scaled object and a function of the imaging pattern. Then, system point spread function is determined by incorporating a decoding process which is dependent on the pixel pitch of the display screen and the decoding function. Finally, the MTF of the system is derived by the magnitude of the Fourier transform of the determined system point spread function. To demonstrate the validity of the mathematically derived MTF in the system, we build a coded aperture imaging system that can capture the scene in front of the display, where the system consists of a display screen and a sensor panel. Experimental results show that the derived MTF of coded aperture imaging in a flat panel display system well corresponds to the measured MTF.

  14. Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

    NASA Technical Reports Server (NTRS)

    Zhu, M. F.; Suni, I.; Nicolet, M.-A.; Sands, T.

    1984-01-01

    Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.

  15. Preliminary performance of image quality for a low-dose C-arm CT system with a flat-panel detector

    NASA Astrophysics Data System (ADS)

    Kyung Cha, Bo; Seo, Chang-Woo; Yang, Keedong; Jeon, Seongchae; Huh, Young

    2015-06-01

    Digital flat panel imager (FPI)-based cone-beam computed tomography (CBCT) has been widely used in C-arm imaging for spine surgery and interventional procedures. The system provides real-time fluoroscopy with high spatial resolution and three-dimensional (3D) visualization of anatomical structure without the need for patient transportation in interventional suite. In this work, a prototype CBCT imaging platform with continuous single rotation about the gantry was developed by using a large-area flat-panel detector with amorphous Si-based thin film transistor matrix. The different 2D projection images were acquired during constant gantry velocity for reconstructed images at a tube voltage of 80-120 kVp, and different current (10-50 mA) conditions. Various scan protocols were applied to a chest phantom human by changing the number of projection images and scanning angles. The projections were then reconstructed into a volumetric data of sections by using a 3D reconstruction algorithm (e.g., filtered back projection). The preliminary quantitative X-ray performance of our CBCT system was investigated by using the American Association of Physicists in Medicine CT phantom in terms of spatial resolution, contrast resolution, and CT number linearity for mobile or fixed C-arm based CBCT application with limited rotational geometry. The novel results of the projection data with different scanning angles and angular increments in the orbital gantry platform were acquired and evaluated experimentally.

  16. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    SciTech Connect

    Wan, Yimao Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  17. Pressure-induced transformations in amorphous silicon: A computational study

    SciTech Connect

    Garcez, K. M. S.; Antonelli, A.

    2014-02-14

    We study the transformations between amorphous phases of Si through molecular simulations using the environment dependent interatomic potential (EDIP) for Si. Our results show that upon pressure, the material undergoes a transformation from the low density amorphous (LDA) Si to the high density amorphous (HDA) Si. This transformation can be reversed by decompressing the material. This process, however, exhibits clear hysteresis, suggesting that the transformation LDA ↔ HDA is first-order like. The HDA phase is predominantly five-fold coordinated, whereas the LDA phase is the normal tetrahedrally bonded amorphous Si. The HDA phase at 400 K and 20 GPa was submitted to an isobaric annealing up to 800 K, resulting in a denser amorphous phase, which is structurally distinct from the HDA phase. Our results also show that the atomic volume and structure of this new amorphous phase are identical to those of the glass obtained by an isobaric quenching of the liquid in equilibrium at 2000 K and 20 GPa down to 400 K. The similarities between our results and those for amorphous ices suggest that this new phase is the very high density amorphous Si.

  18. Core-shell amorphous silicon-carbon nanoparticles for high performance anodes in lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Sourice, Julien; Bordes, Arnaud; Boulineau, Adrien; Alper, John P.; Franger, Sylvain; Quinsac, Axelle; Habert, Aurélie; Leconte, Yann; De Vito, Eric; Porcher, Willy; Reynaud, Cécile; Herlin-Boime, Nathalie; Haon, Cédric

    2016-10-01

    Core-shell silicon-carbon nanoparticles are attractive candidates as active material to increase the capacity of Li-ion batteries while mitigating the detrimental effects of volume expansion upon lithiation. However crystalline silicon suffers from amorphization upon the first charge/discharge cycle and improved stability is expected in starting with amorphous silicon. Here we report the synthesis, in a single-step process, of amorphous silicon nanoparticles coated with a carbon shell (a-Si@C), via a two-stage laser pyrolysis where decomposition of silane and ethylene are conducted in two successive reaction zones. Control of experimental conditions mitigates silicon core crystallization as well as formation of silicon carbide. Auger electron spectroscopy and scanning transmission electron microscopy show a carbon shell about 1 nm in thickness, which prevents detrimental oxidation of the a-Si cores. Cyclic voltammetry demonstrates that the core-shell composite reaches its maximal lithiation during the first sweep, thanks to its amorphous core. After 500 charge/discharge cycles, it retains a capacity of 1250 mAh.g-1 at a C/5 rate and 800 mAh.g-1 at 2C, with an outstanding coulombic efficiency of 99.95%. Moreover, post-mortem observations show an electrode volume expansion of less than 20% and preservation of the nanostructuration.

  19. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires.

    PubMed

    Yu, Linwei; O'Donnell, Benedict; Foldyna, Martin; Roca i Cabarrocas, Pere

    2012-05-17

    Constructing radial junction hydrogenated amorphous silicon (a-Si:H) solar cells on top of silicon nanowires (SiNWs) represents a promising approach towards high performance and cost-effective thin film photovoltaics. We here develop an all-in situ strategy to grow SiNWs, via a vapour-liquid-solid (VLS) mechanism on top of ZnO-coated glass substrate, in a plasma-enhanced chemical vapour deposition (PECVD) reactor. Controlling the distribution of indium catalyst drops allows us to tailor the as-grown SiNW arrays into suitable size and density, which in turn results in both a sufficient light trapping effect and a suitable arrangement allowing for conformal coverage of SiNWs by subsequent a-Si:H layers. We then demonstrate the fabrication of radial junction solar cells and carry on a parametric study designed to shed light on the absorption and quantum efficiency response, as functions of the intrinsic a-Si:H layer thickness and the density of SiNWs. These results lay a solid foundation for future structural optimization and performance ramp-up of the radial junction thin film a-Si:H photovoltaics.

  20. Silicon network structure and 29Si spin-lattice relaxation in amorphous hydrogenated silicon

    NASA Astrophysics Data System (ADS)

    Cheung, Man Ken; Petrich, Mark A.

    1992-04-01

    We report a NMR study of amorphous hydrogenated silicon (a-Si:H) that measures the 29Si spin-lattice relaxation time T1. Measurements of 29Si T1 are useful in learning about the silicon network structure and the localized states within the mobility gap. Coupling to paramagnetic dangling bonds is the predominant 29Si spin-lattice relaxation mechanism in a-Si:H. Spin flipping of paramagnetic electrons, caused by coupling to the lattice, produces fluctuating local fields that stimulate nuclear spin-lattice relaxation. By comparing our experimental results with existing theory, we find that dangling bonds are randomly distributed in device-quality materials but are inhomogeneously distributed in non-device-quality materials. We also find that there are two simultaneously occurring dangling-bond spin-lattice relaxation mechanisms: one through the spin-orbit coupling modulated by thermal excitation of ``two-level systems,'' and the other through hopping conduction between localized states near the Fermi level. Simple chemical-shift measurements are also helpful in characterizing a-Si:H. We find that the 29Si resonance shifts upfield with increasing microstructure in the material.

  1. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    PubMed

    Marrs, Michael A; Raupp, Gregory B

    2016-01-01

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

  2. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

    PubMed Central

    Marrs, Michael A.; Raupp, Gregory B.

    2016-01-01

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

  3. Performance and modeling of amorphous silicon photovoltaics for building-integrated applications

    SciTech Connect

    Kroposki, B.; Hansen, R.

    1999-07-01

    Amorphous silicon photovoltaic (PV) modules offer several advantages for building-integrated applications. The material can be deposited on glass or flexible substrates, which allows for products like roofing shingles and integrated PV/building glass. The material also has a uniform surface, which is ideal for many architectural applications. Amorphous silicon modules perform well in warm weather and have a small temperature coefficient for power. Depending on the building load, this may be beneficial when compared to crystalline systems. At the National Renewable Energy Laboratory, the authors are monitoring the performance of a triple-junction a-Si system. The system consists of 72 roofing shingles mounted directly to simulated roofing structures. This paper examines the performance of the building-integrated amorphous silicon PV system and applicability for covering residential loads. A simple model of system performance is also developed and is presented.

  4. Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

    NASA Astrophysics Data System (ADS)

    Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.

    2014-03-01

    Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures within the amorphous region in which a single hydrogen atom is bound to two silicon atoms (bridge bonds), near fivefold coordinated silicon (floating bonds), or where there is a particularly dense cluster of many silicon atoms. Based on these results, we propose a mechanism by which deep hole traps associated with bridge bonds may contribute to the Staebler-Wronski effect.

  5. In situ observation of shear-driven amorphization in silicon crystals

    NASA Astrophysics Data System (ADS)

    He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

    2016-10-01

    Amorphous materials are used for both structural and functional applications. An amorphous solid usually forms under driven conditions such as melt quenching, irradiation, shock loading or severe mechanical deformation. Such extreme conditions impose significant challenges on the direct observation of the amorphization process. Various experimental techniques have been used to detect how the amorphous phases form, including synchrotron X-ray diffraction, transmission electron microscopy (TEM) and Raman spectroscopy, but a dynamic, atomistic characterization has remained elusive. Here, by using in situ high-resolution TEM (HRTEM), we show the dynamic amorphization process in silicon nanocrystals during mechanical straining on the atomic scale. We find that shear-driven amorphization occurs in a dominant shear band starting with the diamond-cubic (dc) to diamond-hexagonal (dh) phase transition and then proceeds by dislocation nucleation and accumulation in the newly formed dh-Si phase. This process leads to the formation of an amorphous Si (a-Si) band, embedded with dh-Si nanodomains. The amorphization of dc-Si via an intermediate dh-Si phase is a previously unknown pathway of solid-state amorphization.

  6. Hydrogenated amorphous silicon radiation detectors: Material parameters, radiation hardness, charge collection

    SciTech Connect

    Qureshi, S.

    1991-01-01

    For nearly two decades now hydrogenated amorphous silicon has generated considerable interest for its potential use in various device applications namely, solar cells, electrolithography, large-area electronics etc. The development of efficient and economic solar cells has been on the forefront of this research. This interest in hydrogenated amorphous silicon has been motivated by the fact that amorphous silicon can be deposited over a large area at relatively low cost compared to crystalline silicon. Hydrogenated amorphous silicon, frequently abbreviated as a-Si:H, used in solar-cell applications is a micron or less thick. The basic device structure is a p-i-n diode where the i layer is the active layer for radiation to interact. This is so because intrinsic a-Si:H has superior electrical properties in comparison to doped a-Si:H which serves the purpose of forming a potential barrier on either end of the i layer. The research presented in this dissertation was undertaken to study the properties of a-Si:H for radiation detection applications in physics and medicine.

  7. Amorphization and nanocrystallization of silicon under laser shock compression: bridging experiment with atomic simulation

    NASA Astrophysics Data System (ADS)

    Zhao, Shiteng; Kad, Bimal; Hahn, Eric; Remington, Bruce; Wehrenberg, Christopher; Bringa, Eduardo; Huntington, Channing; Park, Hye-Sook; More, Karren; Meyers, Marc

    Terawatt, nanosecond-duration, laser-driven, shock compression and recovery experiments on [001] silicon unveiled remarkable structural changes above a pressure threshold. Two distinct amorphous regions were identified: (a) a bulk amorphous layer close to the surface and (b) amorphous bands initially aligned with {111}slip planes. Further increase of the laser energy leads to the re-crystallization of amorphous silicon into nanocrystals with high concentration of nano-twins. Shock-induced defects play a very important role in the onset of amorphization. Calculations of the free energy changes with pressure and shear, using the Patel-Cohen methodology, are in agreement with the experimental results. Molecular dynamics simulation corroborates the amorphization, showing that it is initiated by the nucleation and propagation of partial dislocations. The nucleation of amorphization is analyzed by classical nucleation theory. This research is funded by a UC Research Laboratories Grant (09-LR-06-118456-MEYM) and a National Laser Users Facility (NLUF) Grant (PE-FG52-09NA-29043).

  8. A semiempirical linear model of indirect, flat-panel x-ray detectors

    SciTech Connect

    Huang, Shih-Ying; Yang Kai; Abbey, Craig K.; Boone, John M.

    2012-04-15

    Purpose: It is important to understand signal and noise transfer in the indirect, flat-panel x-ray detector when developing and optimizing imaging systems. For optimization where simulating images is necessary, this study introduces a semiempirical model to simulate projection images with user-defined x-ray fluence interaction. Methods: The signal and noise transfer in the indirect, flat-panel x-ray detectors is characterized by statistics consistent with energy-integration of x-ray photons. For an incident x-ray spectrum, x-ray photons are attenuated and absorbed in the x-ray scintillator to produce light photons, which are coupled to photodiodes for signal readout. The signal mean and variance are linearly related to the energy-integrated x-ray spectrum by empirically determined factors. With the known first- and second-order statistics, images can be simulated by incorporating multipixel signal statistics and the modulation transfer function of the imaging system. To estimate the semiempirical input to this model, 500 projection images (using an indirect, flat-panel x-ray detector in the breast CT system) were acquired with 50-100 kilovolt (kV) x-ray spectra filtered with 0.1-mm tin (Sn), 0.2-mm copper (Cu), 1.5-mm aluminum (Al), or 0.05-mm silver (Ag). The signal mean and variance of each detector element and the noise power spectra (NPS) were calculated and incorporated into this model for accuracy. Additionally, the modulation transfer function of the detector system was physically measured and incorporated in the image simulation steps. For validation purposes, simulated and measured projection images of air scans were compared using 40 kV/0.1-mm Sn, 65 kV/0.2-mm Cu, 85 kV/1.5-mm Al, and 95 kV/0.05-mm Ag. Results: The linear relationship between the measured signal statistics and the energy-integrated x-ray spectrum was confirmed and incorporated into the model. The signal mean and variance factors were linearly related to kV for each filter material (r

  9. Graphene as a transparent electrode for amorphous silicon-based solar cells

    SciTech Connect

    Vaianella, F. Rosolen, G.; Maes, B.

    2015-06-28

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  10. Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

    NASA Astrophysics Data System (ADS)

    Harmatha, Ladislav; Mikolášek, Miroslav; Stuchlíková, L'ubica; Kósa, Arpád; Žiška, Milan; Hrubčín, Ladislav; Skuratov, Vladimir A.

    2015-11-01

    The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm-2 to 5 × 1010 cm-2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

  11. Anode properties of silicon-rich amorphous silicon suboxide films in all-solid-state lithium batteries

    NASA Astrophysics Data System (ADS)

    Miyazaki, Reona; Ohta, Narumi; Ohnishi, Tsuyoshi; Takada, Kazunori

    2016-10-01

    This paper reports the effects of introducing oxygen into amorphous silicon films on their anode properties in all-solid-state lithium batteries. Although poor cycling performance is a critical issue in silicon anodes, it has been effectively improved by introducing even a small amount of oxygen, that is, even in Si-rich amorphous silicon suboxide (a-SiOx) films. Because of the small amount of oxygen in the films, high cycling performance has been achieved without lowering the capacity and power density: an a-Si film delivers discharge capacity of 2500 mAh g-1 under high discharge current density of 10 mA cm-2 (35 C). These results demonstrate that a-SiOx is a promising candidate for high-capacity anode materials in solid-state batteries.

  12. Designing, Modeling, Constructing, and Testing a Flat Panel Speaker and Sound Diffuser for a Simulator

    NASA Technical Reports Server (NTRS)

    Dillon, Christina

    2013-01-01

    The goal of this project was to design, model, build, and test a flat panel speaker and frame for a spherical dome structure being made into a simulator. The simulator will be a test bed for evaluating an immersive environment for human interfaces. This project focused on the loud speakers and a sound diffuser for the dome. The rest of the team worked on an Ambisonics 3D sound system, video projection system, and multi-direction treadmill to create the most realistic scene possible. The main programs utilized in this project, were Pro-E and COMSOL. Pro-E was used for creating detailed figures for the fabrication of a frame that held a flat panel loud speaker. The loud speaker was made from a thin sheet of Plexiglas and 4 acoustic exciters. COMSOL, a multiphysics finite analysis simulator, was used to model and evaluate all stages of the loud speaker, frame, and sound diffuser. Acoustical testing measurements were utilized to create polar plots from the working prototype which were then compared to the COMSOL simulations to select the optimal design for the dome. The final goal of the project was to install the flat panel loud speaker design in addition to a sound diffuser on to the wall of the dome. After running tests in COMSOL on various speaker configurations, including a warped Plexiglas version, the optimal speaker design included a flat piece of Plexiglas with a rounded frame to match the curvature of the dome. Eight of these loud speakers will be mounted into an inch and a half of high performance acoustic insulation, or Thinsulate, that will cover the inside of the dome. The following technical paper discusses these projects and explains the engineering processes used, knowledge gained, and the projected future goals of this project

  13. Dual-exposure technique for extending the dynamic range of x-ray flat panel detectors.

    PubMed

    Sisniega, A; Abella, M; Desco, M; Vaquero, J J

    2014-01-20

    This work presents an approach to extend the dynamic range of x-ray flat panel detectors by combining two acquisitions of the same sample taken with two different x-ray photon flux levels and the same beam spectral configuration. In order to combine both datasets, the response of detector pixels was modelled in terms of mean and variance using a linear model. The model was extended to take into account the effect of pixel saturation. We estimated a joint probability density function (j-pdf) of the pixel values by assuming that each dataset follows an independent Gaussian distribution. This j-pdf was used for estimating the final pixel value of the high-dynamic-range dataset using a maximum likelihood method. The suitability of the pixel model for the representation of the detector signal was assessed using experimental data from a small-animal cone-beam micro-CT scanner equipped with a flat panel detector. The potential extension in dynamic range offered by our method was investigated for generic flat panel detectors using analytical expressions and simulations. The performance of the proposed dual-exposure approach in realistic imaging environments was compared with that of a regular single-exposure technique using experimental data from two different phantoms. Image quality was assessed in terms of signal-to-noise ratio, contrast, and analysis of profiles drawn on the images. The dynamic range, measured as the ratio between the exposure for saturation and the exposure equivalent to instrumentation noise, was increased from 76.9 to 166.7 when using our method. Dual-exposure results showed higher contrast-to-noise ratio and contrast resolution than the single-exposure acquisitions for the same x-ray dose. In addition, image artifacts were reduced in the combined dataset. This technique to extend the dynamic range of the detector without increasing the dose is particularly suited to image samples that contain both low and high attenuation regions.

  14. Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

    SciTech Connect

    Wen, Xixing; Zeng, Xiangbin Zheng, Wenjun; Liao, Wugang; Feng, Feng

    2015-01-14

    The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiC{sub x}) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiC{sub x}/SiO{sub 2}/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiC{sub x}, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiC{sub x} can promote the application of Si QDs in low-power consumption semiconductor memory devices.

  15. Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

    NASA Astrophysics Data System (ADS)

    Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.; Calderón, A.; Gómez, G.; González-Sánchez, F. J.; Martínez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Árbol, P.; Sobrón, M.; Vila, I.; Virto, A. L.

    2010-12-01

    This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90° using a pentaprism.

  16. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

    DOEpatents

    Sharp, Kenneth G.; D'Errico, John J.

    1988-01-01

    The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

  17. Amorphous silicon research. Annual subcontract report, October 1, 1994--September 30, 1995

    SciTech Connect

    Arya, R R; Bennett, M; Bradley, D

    1996-02-01

    The major effort in this program is to develop cost-effective processes which satisfy efficiency, yield, and material usage criteria for mass production of amorphous silicon-based multijunction modules. New and improved processes were developed for the component cells and a more robust rear contact was developed for better long term stability.

  18. Hybrid method of making an amorphous silicon P-I-N semiconductor device

    DOEpatents

    Moustakas, Theodore D.; Morel, Don L.; Abeles, Benjamin

    1983-10-04

    The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

  19. Size effects on the thermal conductivity of amorphous silicon thin films

    DOE PAGES

    Thomas Edwin Beechem; Braun, Jeffrey L.; Baker, Christopher H.; Elahi, Miraz; Artyushkova, Kateryna; Norris, Pamela M.; Leseman, Zayd Chad; Gaskins, John T.; Hopkins, Patrick E.; Giri, Ashutosh

    2016-04-01

    In this study, we investigate thickness-limited size effects on the thermal conductivity of amorphous silicon thin films ranging from 3 to 1636 nm grown via sputter deposition. While exhibiting a constant value up to ~100 nm, the thermal conductivity increases with film thickness thereafter. The thickness dependence we demonstrate is ascribed to boundary scattering of long wavelength vibrations and an interplay between the energy transfer associated with propagating modes (propagons) and nonpropagating modes (diffusons). A crossover from propagon to diffuson modes is deduced to occur at a frequency of ~1.8 THz via simple analytical arguments. These results provide empirical evidencemore » of size effects on the thermal conductivity of amorphous silicon and systematic experimental insight into the nature of vibrational thermal transport in amorphous solids.« less

  20. AAPM/RSNA physics tutorial for residents: physics of flat-panel fluoroscopy systems: Survey of modern fluoroscopy imaging: flat-panel detectors versus image intensifiers and more.

    PubMed

    Nickoloff, Edward Lee

    2011-01-01

    This article reviews the design and operation of both flat-panel detector (FPD) and image intensifier fluoroscopy systems. The different components of each imaging chain and their functions are explained and compared. FPD systems have multiple advantages such as a smaller size, extended dynamic range, no spatial distortion, and greater stability. However, FPD systems typically have the same spatial resolution for all fields of view (FOVs) and are prone to ghosting. Image intensifier systems have better spatial resolution with the use of smaller FOVs (magnification modes) and tend to be less expensive. However, the spatial resolution of image intensifier systems is limited by the television system to which they are coupled. Moreover, image intensifier systems are degraded by glare, vignetting, spatial distortions, and defocusing effects. FPD systems do not have these problems. Some recent innovations to fluoroscopy systems include automated filtration, pulsed fluoroscopy, automatic positioning, dose-area product meters, and improved automatic dose rate control programs. Operator-selectable features may affect both the patient radiation dose and image quality; these selectable features include dose level setting, the FOV employed, fluoroscopic pulse rates, geometric factors, display software settings, and methods to reduce the imaging time.

  1. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    NASA Astrophysics Data System (ADS)

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Li, Ziping; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2015-12-01

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18-20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  2. Perfusion analysis using a wide coverage flat-panel volume CT: feasibility study

    NASA Astrophysics Data System (ADS)

    Grasruck, M.; Gupta, R.; Reichardt, B.; Klotz, E.; Schmidt, B.; Flohr, T.

    2007-03-01

    We developed a Flat-panel detector based Volume CT (VCT) prototype scanner with large z-coverage. In that prototype scanner a Varian 4030CB a-Si flat-panel detector was mounted in a multi slice CT-gantry (Siemens Medical Solutions) which provides a 25 cm field of view with 18 cm z-coverage at isocenter. The large volume covered in one rotation can be used for visualization of complete organs of small animals, e.g. rabbits. By implementing a mode with continuous scanning, we are able to reconstruct the complete volume at any point in time during the propagation of a contrast bolus. Multiple volumetric reconstructions over time elucidate the first pass dynamics of a bolus of contrast resulting in 4-D angiography and potentially allowing whole organ perfusion analysis. We studied to which extent pixel based permeability and blood volume calculation with a modified Patlak approach was possible. Experimental validation was performed by imaging evolution of contrast bolus in New Zealand rabbits. Despite the short circulation time of a rabbit, the temporal resolution was sufficient to visually resolve various phases of the first pass of the contrast bolus. Perfusion imaging required substantial spatial smoothing but allowed a qualitative discrimination of different types of parenchyma in brain and liver. If a true quantitative analysis is possible, requires further studies.

  3. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    SciTech Connect

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Chen, Jun; Li, Ziping; She, Juncong; Deng, Shaozhi; Xu, Ningsheng

    2015-12-14

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  4. An iterative algorithm for soft tissue reconstruction from truncated flat panel projections

    NASA Astrophysics Data System (ADS)

    Langan, D.; Claus, B.; Edic, P.; Vaillant, R.; De Man, B.; Basu, S.; Iatrou, M.

    2006-03-01

    The capabilities of flat panel interventional x-ray systems continue to expand, enabling a broader array of medical applications to be performed in a minimally invasive manner. Although CT is providing pre-operative 3D information, there is a need for 3D imaging of low contrast soft tissue during interventions in a number of areas including neurology, cardiac electro-physiology, and oncology. Unlike CT systems, interventional angiographic x-ray systems provide real-time large field of view 2D imaging, patient access, and flexible gantry positioning enabling interventional procedures. However, relative to CT, these C-arm flat panel systems have additional technical challenges in 3D soft tissue imaging including slower rotation speed, gantry vibration, reduced lateral patient field of view (FOV), and increased scatter. The reduced patient FOV often results in significant data truncation. Reconstruction of truncated (incomplete) data is known an "interior problem", and it is mathematically impossible to obtain an exact reconstruction. Nevertheless, it is an important problem in 3D imaging on a C-arm to address the need to generate a 3D reconstruction representative of the object being imaged with minimal artifacts. In this work we investigate the application of an iterative Maximum Likelihood Transmission (MLTR) algorithm to truncated data. We also consider truncated data with limited views for cardiac imaging where the views are gated by the electrocardiogram(ECG) to combat motion artifacts.

  5. Physical properties of a new flat panel detector with cesium-iodide technology

    NASA Astrophysics Data System (ADS)

    Hahn, Andreas; Penchev, Petar; Fiebich, Martin

    2016-03-01

    Flat panel detectors have become the standard technology in projection radiography. Further progress in detector technology will result in an improvement of MTF and DQE. The new detector (DX-D45C; Agfa; Mortsel/Belgium) is based on cesium-iodine crystals and has a change in the detector material and the readout electronics. The detector has a size of 30 cm x 24 cm and a pixel matrix of 2560 x 2048 with a pixel pitch of 124 μm. The system includes an automatic exposure detector, which enables the use of the detector without a connection to the x-ray generator. The physical properties of the detector were determined following IEC 62220-1-1 in a laboratory setting. The MTF showed an improvement compared to the previous version of cesium-iodine based flat-panel detectors. Thereby the DQE is also improved especially for the higher frequencies. The new detector showed an improvement in the physical properties compared to the previous versions. This enables a potential for further dose reductions in clinical imaging.

  6. Flat panel detectors--closing the (digital) gap in chest and skeletal radiology.

    PubMed

    Reiff, K J

    1999-08-01

    In the radiological department today the majority of all X-ray procedures on chest and skeletal radiography is performed with classical film-screen-systems. Using digital luminescence radiography (DLR or CR, which stands for Computed Radiography) as a technique has shown a way to replace this 100-year-old procedure of doing general radiography work by acquiring the X-rays digitally via phosphor screens, but this approach has faced criticism from lots of radiologists world wide and therefore has not been widely accepted except in the intensive care environment. A new technology is now rising based on the use of so called flat panel X-ray (FD) detectors. Semi-conducting material detects the X-rays in digital form directly and creates an instantaneous image for display, distribution and diagnosis. This ability combined with a large field of view and compared to existing methods--excellent detective quantum efficiency represents a revolutionary step for chest and skeletal radiography and will put basic X-ray-work back into the focus of radiological solutions. This paper will explain the basic technology of flat panel detectors, possible system solutions based on this new technology, aspects of the user interface influencing the system utilization and versatility as well as the possibility to redefine the patient examination process for chest and skeletal radiography. Furthermore the author discusses limitations for the first released systems, upgrades for the installed base and possible scenarios for the future, e.g. fluoroscopy or angiography application. PMID:10565511

  7. Dose rate and beam profile measurement of proton beam using a flat panel detector

    NASA Astrophysics Data System (ADS)

    Park, Jeong-Min

    2015-10-01

    A 20-MeV or 100-MeV proton beam is provided to users for their proton beam irradiation experiments at KOrea Multi-Purpose Accelerator Complex. Radiochromic film (Gafchromic / HDV2) has been used to measure the dose rate and the profile of an incident proton beam during irradiation experiments. However, such measurements using radiochromic film have some inconveniences because an additional scanning process of is required to quantify the film's image. Therefore, we tried to measure the dose rate and beam profile by using a flat panel detector (FPD), which was developed for X-ray radiography as a substitute for radiochromic film because the FPD can measure the beam profile and the dose rate directly through a digitized image with a high spatial resolution. In this work, we investigated the feasibility of using a FPD as a substitute for radiochromic film. The preliminary results for the beam profile and the dose rate measured by using the flat panel detector are reported in the paper.

  8. View-dependent geometric calibration for offset flat-panel cone beam computed tomography systems

    NASA Astrophysics Data System (ADS)

    Nguyen, Van-Giang

    2016-04-01

    Geometric parameters that define the geometry of imaging systems are crucial for image reconstruction and image quality in x-ray computed tomography (CT). The problem of determining geometric parameters for an offset flat-panel cone beam CT (CBCT) system, a recently introduced modality with a large field of view, with the assumption of an unstable mechanism and geometric parameters that vary in each view, is considered. To accurately and rapidly find the geometric parameters for each projection view, we use the projection matrix method and design a dedicated phantom that is partially visible in all projection views. The phantom consists of balls distributed symmetrically in a cylinder to ensure the inclusion of the phantom in all views, and a large portion of the phantom is covered in the projection image. To efficiently use calibrated geometric information in the reconstruction process and get rid of approximation errors, instead of decomposing the projection matrix into actual geometric parameters that are manually corrected before being used in reconstruction, as in conventional methods, we directly use the projection matrix and its pseudo-inverse in projection and backprojection operations of reconstruction algorithms. The experiments illustrate the efficacy of the proposed method with a real offset flat-panel CBCT system in dental imaging.

  9. Amorphous Silicon Carbide Passivating Layers to Enable Higher Processing Temperature in Crystalline Silicon Heterojunction Solar Cells

    SciTech Connect

    Boccard, Mathieu; Holman, Zachary

    2015-04-06

    "Very efficient crystalline silicon (c-Si) solar cells have been demonstrated when thin layers of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) are used for passivation and carrier selectivity in a heterojunction device. One limitation of this device structure is the (parasitic) absorption in the front passivation/collection a-Si:H layers; another is the degradation of the a-Si:H-based passivation upon temperature, limiting the post-processes to approximately 200°C thus restricting the contacting possibilities and potential tandem device fabrication. To alleviate these two limitations, we explore the potential of amorphous silicon carbide (a-SiC:H), a widely studied material in use in standard a-Si:H thin-film solar cells, which is known for its wider bandgap, increased hydrogen content and stronger hydrogen bonding compared to a-Si:H. We study the surface passivation of solar-grade textured n-type c-Si wafers for symmetrical stacks of 10-nm-thick intrinsic a-SiC:H with various carbon content followed by either p-doped or n-doped a-Si:H (referred to as i/p or i/n stacks). For both doping types, passivation (assessed through carrier lifetime measurements) is degraded by increasing the carbon content in the intrinsic a-SiC:H layer. Yet, this hierarchy is reversed after annealing at 350°C or more due to drastic passivation improvements upon annealing when an a-SiC:H layer is used. After annealing at 350°C, lifetimes of 0.4 ms and 2.0 ms are reported for i/p and i/n stacks, respectively, when using an intrinsic a-SiC:H layer with approximately 10% of carbon (initial lifetimes of 0.3 ms and 0.1 ms, respectively, corresponding to a 30% and 20-fold increase, respectively). For stacks of pure a-Si:H material the lifetimes degrade from 1.2 ms and 2.0 ms for i/p and i/n stacks, respectively, to less than 0.1 ms and 1.1 ms (12-fold and 2-fold decrease, respectively). For complete solar cells using pure a-Si:H i/p and i/n stacks, the open-circuit voltage (Voc

  10. Ultrafast optical control using the Kerr nonlinearity in hydrogenated amorphous silicon microcylindrical resonators

    PubMed Central

    Vukovic, N.; Healy, N.; Suhailin, F. H.; Mehta, P.; Day, T. D.; Badding, J. V.; Peacock, A. C.

    2013-01-01

    Microresonators are ideal systems for probing nonlinear phenomena at low thresholds due to their small mode volumes and high quality (Q) factors. As such, they have found use both for fundamental studies of light-matter interactions as well as for applications in areas ranging from telecommunications to medicine. In particular, semiconductor-based resonators with large Kerr nonlinearities have great potential for high speed, low power all-optical processing. Here we present experiments to characterize the size of the Kerr induced resonance wavelength shifting in a hydrogenated amorphous silicon resonator and demonstrate its potential for ultrafast all-optical modulation and switching. Large wavelength shifts are observed for low pump powers due to the high nonlinearity of the amorphous silicon material and the strong mode confinement in the microcylindrical resonator. The threshold energy for switching is less than a picojoule, representing a significant step towards advantageous low power silicon-based photonic technologies. PMID:24097126

  11. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    DOE PAGES

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devicesmore » with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.« less

  12. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    SciTech Connect

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devices with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.

  13. High Resolution Radial Distribution Function of Pure Amorphous Silicon

    SciTech Connect

    Laaziri, K.; Roorda, S.; Chicoine, M.; Kycia, S.; Robertson, J.L.; Wang, J.; Moss, S.C.

    1999-04-01

    The structure factor S(Q) of high purity amorphous Si membranes prepared by ion implantation was measured over an extended Q range (0.03{endash}55 {Angstrom} {sup {minus}1} ). Calculation of the first neighbor shell coordination (C{sub 1} ) as a function of maximum Q indicates that measurement of S(Q) out to at least 40 {Angstrom}{sup {minus}1} is required to reliably determine the radial distribution function (RDF). A 2{percent} change in C{sub 1} and subtle changes in the rest of the RDF were observed upon annealing, consistent with point defect removal. After annealing at 600thinsp{degree}C, C{sub 1}=3.88 , which would explain why amorphous Si is less dense than crystalline Si. {copyright} {ital 1999} {ital The American Physical Society}

  14. Sub-amorphous thermal conductivity in ultrathin crystalline silicon nanotubes.

    PubMed

    Wingert, Matthew C; Kwon, Soonshin; Hu, Ming; Poulikakos, Dimos; Xiang, Jie; Chen, Renkun

    2015-04-01

    Thermal transport behavior in nanostructures has become increasingly important for understanding and designing next generation electronic and energy devices. This has fueled vibrant research targeting both the causes and ability to induce extraordinary reductions of thermal conductivity in crystalline materials, which has predominantly been achieved by understanding that the phonon mean free path (MFP) is limited by the characteristic size of crystalline nanostructures, known as the boundary scattering or Casimir limit. Herein, by using a highly sensitive measurement system, we show that crystalline Si (c-Si) nanotubes (NTs) with shell thickness as thin as ∼5 nm exhibit a low thermal conductivity of ∼1.1 W m(-1) K(-1). Importantly, this value is lower than the apparent boundary scattering limit and is even about 30% lower than the measured value for amorphous Si (a-Si) NTs with similar geometries. This finding diverges from the prevailing general notion that amorphous materials represent the lower limit of thermal transport but can be explained by the strong elastic softening effect observed in the c-Si NTs, measured as a 6-fold reduction in Young's modulus compared to bulk Si and nearly half that of the a-Si NTs. These results illustrate the potent prospect of employing the elastic softening effect to engineer lower than amorphous, or subamorphous, thermal conductivity in ultrathin crystalline nanostructures.

  15. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    PubMed

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition. PMID:26716230

  16. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    PubMed

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

  17. Reactive Infiltration of Silicon Melt Through Microporous Amorphous Carbon Preforms

    NASA Technical Reports Server (NTRS)

    Sangsuwan, P.; Tewari, S. N.; Gatica, J. E.; Singh, M.; Dickerson, R.

    1999-01-01

    The kinetics of unidirectional capillary infiltration of silicon melt into microporous carbon preforms have been investigated as a function of the pore morphology and melt temperature. The infiltrated specimens showed alternating bands of dark and bright regions, which corresponded to the unreacted free carbon and free silicon regions, respectively. The decrease in the infiltration front velocity for increasing infiltration distances, is in qualitative agreement with the closed-form solution of capillarity driven fluid flow through constant cross section cylindrical pores. However, drastic changes in the thermal response and infiltration front morphologies were observed for minute differences in the preforms microstructure. This suggests the need for a dynamic percolation model that would account for the exothermic nature of the silicon-carbon chemical reaction and the associated pore closing phenomenon.

  18. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    SciTech Connect

    Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

    2009-03-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10{sup 18} cm{sup -3}. Beyond this defect level, a sublinear relation is found i

  19. Directed dewetting of amorphous silicon film by a donut-shaped laser pulse

    NASA Astrophysics Data System (ADS)

    Yoo, Jae-Hyuck; In, Jung Bin; Zheng, Cheng; Sakellari, Ioanna; Raman, Rajesh N.; Matthews, Manyalibo J.; Elhadj, Selim; Grigoropoulos, Costas P.

    2015-04-01

    Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures.

  20. Evaluation of the quality of CT-like images obtained using a commercial flat panel detector system

    PubMed Central

    Smyth, JM; Sutton, DG; Houston, JG

    2006-01-01

    Purpose The development of flat panel detector technology has resulted in renewed interest in the possibility of generating CT-like images from rotational angiographic acquisitions. At least two commercial products now use cone beam reconstruction software in conjunction with flat panel detectors to produce such images. The purpose of the work presented here is to report on image quality obtained from one such system in objective and subjective terms and to compare it with the quality of images obtained from a modern multi-detector CT scanner. Method The Image quality was assessed using a CATPHAN 500 model and an AAPM CT Performance Phantom model. Image noise, CT number accuracy, CT number consistency, Low Contrast Resolution, surface dose and Modulation Transfer Function were assessed for the flat panel detector and compared with results obtained from a 4 slice CT scanner. Results As expected image quality obtained from the CT scanner was much better than from the flat panel detector. Low contrast resolution was much worse and the surface dose was higher for the flat panel detector than the CT scanner. There was an inaccuracy in CT number determination and the noise was greater by a factor of two or three. Limiting resolution was better on images from the CT scanner. Conclusion The poor low contrast resolution from flat panel detector was expected given the expected resolution of ±10 Hounsfield Units. These systems should not be considered as diagnostic CT scanners. However, the remaining performance figures indicate that the CT-like images obtained from this type of equipment are of sufficient quality for at least some clinical applications, such as detection of brain haemorrhages in the vascular suite. PMID:21614331

  1. Crystalline-amorphous core-shell silicon nanowires for high capacity and high current battery electrodes.

    PubMed

    Cui, Li-Feng; Ruffo, Riccardo; Chan, Candace K; Peng, Hailin; Cui, Yi

    2009-01-01

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon's large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline-amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li(+) ions. We demonstrate here that these core-shell nanowires have high charge storage capacity ( approximately 1000 mAh/g, 3 times of carbon) with approximately 90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, approximately 20 times of carbon at 1 h rate).

  2. Ultrasmooth growth of amorphous silicon films through ion-induced long-range surface correlations

    SciTech Connect

    Redondo-Cubero, A.; Gago, R.; Vazquez, L.

    2011-01-03

    Ultrasmooth amorphous silicon films with a constant roughness below 0.2 nm were produced for film thickness up to {approx}1 {mu}m by magnetron sputtering under negative voltage substrate biasing (100-400 V). In contrast, under unbiased conditions the roughness of the resulting mounded films increased linearly with growth time due to shadowing effects. A detailed analysis of the amorphous film growth dynamics proves that the bias-induced ultrasmoothness is produced by a downhill mass transport process that leads to an extreme surface leveling inducing surface height correlations up to lateral distances close to 0.5 {mu}m.

  3. Method of forming a spacer for field emission flat panel displays

    SciTech Connect

    Bernhardt, A.F.; Contolini, R.J.

    1997-08-19

    Spacers are disclosed for applications such as field emission flat panel displays and vacuum microelectronics, and which involves the application of aerogel/xerogel technology to the formation of the spacer. In a preferred approach the method uses a mold and mold release agent wherein the gel precursor is a liquid which can be applied to the mold filling holes which expose the substrate (either the baseplate or the faceplate). A release agent is applied to the mold prior to precursor application to ease removal of the mold after formation of the dielectric spacer. The shrinkage of the gel during solvent extraction also improves mold removal. The final spacer material is a good dielectric, such as silica, secured to the substrate. 3 figs.

  4. Method of forming a spacer for field emission flat panel displays

    DOEpatents

    Bernhardt, Anthony F.; Contolini, Robert J.

    1997-01-01

    Spacers for applications such as field emission flat panel displays and vacuum microelectronics, and which involves the application of aerogel/xerogel technology to the formation of the spacer. In a preferred approach the method uses a mold and mold release agent wherein the gel precursor is a liquid which can be applied to the mold filling holes which expose the substrate (either the baseplate or the faceplate). A release agent is applied to the mold prior to precursor application to ease removal of the mold after formation of the dielectric spacer. The shrinkage of the gel during solvent extraction also improves mold removal. The final spacer material is a good dielectric, such as silica, secured to the substrate.

  5. Response of laminated composite flat panels to sonic boom and explosive blast loadings

    NASA Technical Reports Server (NTRS)

    Librescu, L.; Nosier, A.

    1990-01-01

    This paper deals with a theoretical analysis of the dynamic response of shear deformable symmetrically laminated rectangular composite flat panels exposed to sonic boom and explosive blast loadings. The pertinent governing equations incorporating transverse shear deformation, transverse normal stress, as well as the higher-order effects are solved by using the integral-transform technique. The obtained results are compared with their counterparts obtained within the framework of the first-order transverse shear deformation and the classical plate theories and some conclusions concerning their range of applicability are outlined. The paper also contains a detailed analysis of the influence played by the various parameters characterizing the considered pressure pulses as well as the material and geometry of the plate.

  6. Test and Analysis of Foam Impacting a 6x6 Inch RCC Flat Panel

    NASA Technical Reports Server (NTRS)

    Lessard, Wendy B.

    2006-01-01

    This report presents the testing and analyses of a foam projectile impacting onto thirteen 6x6 inch flat panels at a 90 degrees incidence angle. The panels tested in this investigation were fabricated of Reinforced-Carbon-Carbon material and were used to aid in the validation of an existing material model, MAT58. The computational analyses were performed using LS-DYNA, which is a physics-based, nonlinear, transient, finite element code used for analyzing material responses subjected to high impact forces and other dynamic conditions. The test results were used to validate LS-DYNA predictions and to determine the threshold of damage generated by the MAT58 cumulative damage material model. The threshold of damage parameter represents any external or internal visible RCC damage detectable by nondestructive evaluation techniques.

  7. A typical flat-panel membrane bioreactor with a composite membrane for sulfur removal

    NASA Astrophysics Data System (ADS)

    Guan, Jian; Xiao, Yuan; Song, Jimin; Miao, Junhe

    2014-03-01

    The aim of this work was to provide a concrete study to understand the effects of operation on biofilm morphology and microstructure and degradation efficiency for the disposal of sulfur dioxide produced by coal-fired power plants. For this purpose, a flat-panel reactor-membrane bioreactor (MBR) with a composite membrane consisting of a dense layer and a support layer was designed; the membrane bioreactors inoculated with Thiobacillus ferrooxidans were further conducted for the removal of sulfur dioxide. Dry weight, active biomass, pressure drop, removal efficiency, morphology and structure of the formed biofilms were investigated and analyzed over period of biofilm formation. The results found that the dry weight, biomass, pressure drops and removal efficiency increased rapidly during biofilm formation, remained relatively stable in the stabilization period of biofilm growth, and finally reached 0.085 g, 7.00 μg, 180 Pa, and 78%, respectively. Our results suggested the MBR is available for flue-gas desulfurization.

  8. Lowering the ignition voltage by the dual microhollow cathode configuration for multichannel flat panel lamp

    SciTech Connect

    Lee, Tae Il; Park, Ki Wan; Lee, Sung Won; Baik, Hong Koo

    2006-03-20

    We have developed a dual microhollow cathode configuration, employing one power supply circuit with a resistor that is suitable for lamp starting without additional power supplier. We also investigated their electrical characteristics and photo images, varying the applied voltage. The electrical and optical measurements showed that the discharge passed through four distinct stages: no discharges, the first microhollow cathode discharges, the both of the first and second microhollow cathode discharges, and finally the main discharge. As a result, the V{sub s} and E{sub s}/p of a dual microhollow configuration were lower by a factor of about 2 than those of a diode at 40 Torr. We have also observed that the parallel operation can be possible with a single resistor in nine channels flat panel lamp.

  9. Hysterosalpingography using a flat panel unit: Evaluation and optimization of ovarian radiation dose

    SciTech Connect

    Messaris, Gerasimos A. T.; Abatzis, Ilias; Kagadis, George C.; Samartzis, Alexandros P.; Athanasopoulou, Panagiota; Christeas, Nikolaos; Katsanos, Konstantinos; Karnabatidis, Dimitrios; Nikiforidis, George C.

    2012-07-15

    Purpose: The aim of the present study was the evaluation and optimization of radiation dose to the ovaries (D) in hysterosalpingography (HSG). Methods: The study included a phantom study and a clinical one. In the phantom study, we evaluated imaging results for different geometrical setups and irradiation conditions. In the clinical study, 34 women were assigned into three different fluoroscopy modes and D was estimated with direct cervical TLD measurements. Results: In the phantom study, we used a source-to-image-distance (SID) of 110 cm and a field diagonal of 48 cm, and thus decreased air KERMA rate (KR) by 19% and 70%, respectively, for beam filtration: 4 mm Al and 0.9 mm Cu (Low dose). The least radiation exposure was accomplished by using the 3.75 pps fluoroscopy mode in conjunction with beam filtration: Low dose. In the clinical study, D normalized to 50 s of fluoroscopy time with a 3.75 pps fluoroscopy mode reached a value of 0.45 {+-} 0.04 mGy. Observers' evaluation of diagnostic image quality did not significantly differ for the three different modes of acquisition that were compared. Conclusions: Digital spot radiographs could be omitted in modern flat panel systems during HSG. Fluoroscopy image acquisitions in a modern flat panel unit at 3.75 pps and a beam filtration of 4 mm Al and 0.9 mm Cu demonstrate acceptable image quality with an average D equal to 0.45 mGy. This value is lower compared to the studied literature. For these reasons, the proposed method may be recommended for routine HSG examination in order to limit radiation exposure to the ovaries.

  10. Absence of amorphous phase in high power femtosecond laser-ablated silicon

    SciTech Connect

    Rogers, Matthew S.; Grigoropoulos, Costas P.; Minor, Andrew M.; Mao, Samuel S.

    2009-01-05

    As femtosecond lasers emerge as viable tools for advanced microscale materials processing, it becomes increasingly important to understand the characteristics of materials resulting from femtosecond laser microablation or micromachining. We conducted transmission electron microscopy experiments to investigate crater structures in silicon produced by repetitive high power femtosecond laser ablation. Comparable experiments of nanosecond laser ablation of silicon were also performed. We found that an amorphous silicon layer that is typically produced in nanosecond laser ablation is absent when the material is irradiated by high power femtosecond laser pulses. Instead, only a defective single crystalline layer was observed in the high power femtosecond laser-ablated silicon crater. Possible mechanisms underlying the formation of the defective single crystalline phase are discussed.

  11. High energy density amorphous silicon anodes for lithium ion batteries deposited by DC sputtering

    NASA Astrophysics Data System (ADS)

    Farmakis, Filippos; Elmasides, Costas; Fanz, Patrik; Hagen, Markus; Georgoulas, Nikolaos

    2015-10-01

    As more and more applications require high energy density electrochemical storage systems that deliver more than 200 Wh/kg, Lithium-ion batteries with silicon-based anodes provide promising electrochemical properties especially high specific capacity. In this paper, we present micro-grain structured silicon deposited by DC sputtering on special copper foil that serves as current collector. It is demonstrated that high-density silicon anodes are obtained with more than 2000 mAh g-1 and 2.0 mAh cm-2 that can be considered as a commercial value. In addition, irreversible capacity during the first galvanostatic cycle can be lower than 20% for such anodes. Finally, it is found that there exists a clear correlation between the grain-size and the texture of the amorphous silicon to the electrochemical performance of half-cells.

  12. Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 1 February 2005 - 31 July 2008

    SciTech Connect

    Taylor, P. C.; Williams, G. A.

    2009-09-01

    Electron spin resonance and nuclear magnetic resonance was done on amorphous silicon samples (modules with a-Si:H and a-SixGe1-x:H intrinsic layer) to study defects that contribute to Staebler-Wronski effect.

  13. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    2016-07-01

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline silicon wafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450 °C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450 °C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltage of over 710 mV and an efficiency of over 19%.

  14. Inelastic electron scattering in amorphous silicon nitride and aluminum oxide with multiple-scattering corrections

    NASA Astrophysics Data System (ADS)

    Livins, Peteris; Aton, T.; Schnatterly, S. E.

    1988-09-01

    Electron-energy-loss measurements for an amorphous chemical-vapor-deposited silicon nitride film and evaporated sapphire in the broad energy range 1-200 eV are investigated. A method, not requiring the zero-loss peak, to remove the multiple scattering is discussed, applied, and the optical constants obtained. An Elliot-type model used with aluminum oxide gives a valence-exciton binding energy of 1.36+/-0.2 eV with a band gap of 9.8+/-0.2 eV. The unexpected strength of the nitrogen 2s transition is noted in silicon nitride.

  15. An alternative system for mycotoxin detection based on amorphous silicon sensors

    NASA Astrophysics Data System (ADS)

    Caputo, D.; de Cesare, G.; De Rossi, P.; Fanelli, C.; Nascetti, A.; Ricelli, A.; Scipinotti, R.

    2007-05-01

    In this work we investigate, for the first time, the performances of a system based on hydrogenated amorphous silicon photosensors for the detection of Ochratoxin A. The sensor is a n-type/intrinsic/p-type amorphous silicon stacked structure deposited on a glass substrate. The mycotoxin is deposited on a thin layer chromatographic plate and aligned with the sensor. An ultraviolet radiation excites the ochratoxin A, whose fluorescence produces a photocurrent in the sensor. The photocurrent value is proportional to the deposited mycotoxin quantity. An excellent linearity of the detector response over more than two orders of magnitude of ochratoxin A amount is observed. The minimum detected mycotoxin quantity is equal to 0.1ng, suggesting that the presented detection system could be a good candidate to perform rapid and analytical ochratoxin A analysis in different kind of samples.

  16. Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

    SciTech Connect

    Maier, R.; Haeublein, V.; Ryssel, H.; Voellm, H.; Feili, D.; Seidel, H.; Frey, L.

    2012-11-06

    The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.

  17. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    SciTech Connect

    Yan, Wensheng Gu, Min; Tao, Zhikuo; Ong, Thiam Min Brian

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

  18. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency

    NASA Astrophysics Data System (ADS)

    Funde, Adinath M.; Nasibulin, Albert G.; Gufran Syed, Hashmi; Anisimov, Anton S.; Tsapenko, Alexey; Lund, Peter; Santos, J. D.; Torres, I.; Gandía, J. J.; Cárabe, J.; Rozenberg, A. D.; Levitsky, Igor A.

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics.

  19. Efficient Crystalline Si Solar Cell with Amorphous/Crystalline Silicon Heterojunction as Back Contact: Preprint

    SciTech Connect

    Nemeth, B.; Wang, Q.; Shan, W.

    2012-06-01

    We study an amorphous/crystalline silicon heterojunction (Si HJ) as a back contact in industrial standard p-type five-inch pseudo-square wafer to replace Al back surface field (BSF) contact. The best efficiency in this study is over 17% with open-circuit (Voc) of 0.623 V, which is very similar to the control cell with Al BSF. We found that Voc has not been improved with the heterojunction structure in the back. The typical minority carrier lifetime of these wafers is on the order of 10 us. We also found that the doping levels of p-layer affect the FF due to conductivity and band gap shifting, and an optimized layer is identified. We conclude that an amorphous/crystalline silicon heterojunction can be a very promising structure to replace Al BSF back contact.

  20. Nanoscale solely amorphous layer in silicon wafers induced by a newly developed diamond wheel

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Guo, Liangchao; Cui, Junfeng; Wang, Bo; Kang, Renke; Guo, Dongming

    2016-10-01

    Nanoscale solely amorphous layer is achieved in silicon (Si) wafers, using a developed diamond wheel with ceria, which is confirmed by high resolution transmission electron microscopy (HRTEM). This is different from previous reports of ultraprecision grinding, nanoindentation and nanoscratch, in which an amorphous layer at the top, followed by a crystalline damaged layer beneath. The thicknesses of amorphous layer are 43 and 48 nm at infeed rates of 8 and 15 μm/min, respectively, which is verified using HRTEM. Diamond-cubic Si-I phase is verified in Si wafers using selected area electron diffraction patterns, indicating the absence of high pressure phases. Ceria plays an important role in the diamond wheel for achieving ultrasmooth and bright surfaces using ultraprecision grinding.

  1. Nanoscale solely amorphous layer in silicon wafers induced by a newly developed diamond wheel

    PubMed Central

    Zhang, Zhenyu; Guo, Liangchao; Cui, Junfeng; Wang, Bo; Kang, Renke; Guo, Dongming

    2016-01-01

    Nanoscale solely amorphous layer is achieved in silicon (Si) wafers, using a developed diamond wheel with ceria, which is confirmed by high resolution transmission electron microscopy (HRTEM). This is different from previous reports of ultraprecision grinding, nanoindentation and nanoscratch, in which an amorphous layer at the top, followed by a crystalline damaged layer beneath. The thicknesses of amorphous layer are 43 and 48 nm at infeed rates of 8 and 15 μm/min, respectively, which is verified using HRTEM. Diamond-cubic Si-I phase is verified in Si wafers using selected area electron diffraction patterns, indicating the absence of high pressure phases. Ceria plays an important role in the diamond wheel for achieving ultrasmooth and bright surfaces using ultraprecision grinding. PMID:27734934

  2. A universal feature in the optical absorption spectrum associated with hydrogenated amorphous silicon: A dimensionless joint density of states analysis

    NASA Astrophysics Data System (ADS)

    Thevaril, Jasmin J.; O'Leary, Stephen K.

    2016-10-01

    Using a dimensionless joint density of states formalism for the quantitative characterization of the optical response associated with hydrogenated amorphous silicon, a critical comparative analysis of a large number of different optical absorption data sets is considered. When these data sets are cast into this dimensionless framework, we observe a trend that is almost completely coincident for all of the data sets considered. This suggests that there is a universal feature associated with the optical absorption spectrum of hydrogenated amorphous silicon.

  3. Magneto-optical switch with amorphous silicon waveguides on magneto-optical garnet

    NASA Astrophysics Data System (ADS)

    Ishida, Eiichi; Miura, Kengo; Shoji, Yuya; Mizumoto, Tetsuya; Nishiyama, Nobuhiko; Arai, Shigehisa

    2016-08-01

    We fabricated a magneto-optical (MO) switch with a hydrogenated amorphous silicon waveguide on an MO garnet. The switch is composed of a 2 × 2 Mach-Zehnder interferometer (MZI). The switch state is controlled by an MO phase shift through a magnetic field generated by a current flowing in an electrode located on the MZI. The switching operation was successfully demonstrated with an extinction ratio of 11.7 dB at a wavelength of 1550 nm.

  4. The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots.

    PubMed

    Askari, Sadegh; Svrcek, Vladmir; Maguire, Paul; Mariotti, Davide

    2015-12-22

    Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum-confined composite material with unique characteristics. The synthesis of a-Si:H QDs is demonstrated with an atmospheric-pressure plasma process, which allows for accurate control of a highly chemically reactive non-equilibrium environment with temperatures well below the crystallization temperature of Si QDs.

  5. Highly Efficient Hybrid Polymer and Amorphous Silicon Multijunction Solar Cells with Effective Optical Management.

    PubMed

    Tan, Hairen; Furlan, Alice; Li, Weiwei; Arapov, Kirill; Santbergen, Rudi; Wienk, Martijn M; Zeman, Miro; Smets, Arno H M; Janssen, René A J

    2016-03-16

    Highly efficient hybrid multijunction solar cells are constructed with a wide-bandgap amorphous silicon for the front subcell and a low-bandgap polymer for the back subcell. Power conversion efficiencies of 11.6% and 13.2% are achieved in tandem and triple-junction configurations, respectively. The high efficiencies are enabled by deploying effective optical management and by using photoactive materials with complementary absorption. PMID:26780260

  6. Estimation of the adequacy of the fractal model of the atomic structure of amorphous silicon

    SciTech Connect

    Golodenko, A. B.

    2010-01-15

    A method of constructing a fractal model of noncrystalline solid substance is considered using the example of amorphous silicon. In systems of iteration functions, the physical meaning of dihedral and valence angles of the elementary crystallographic cell is assigned to arguments. The model adequacy is estimated by the radial distribution function, the atomic structure density, the distribution of valence and dihedral angles, and the density of dangling interatomic bonds.

  7. Improved stability of hydrogenated amorphous-silicon photosensitivity by ultraviolet illumination

    NASA Astrophysics Data System (ADS)

    Branz, Howard M.; Xu, Yueqin; Heck, Stephan; Gao, Wei

    2002-10-01

    Postdeposition ultraviolet (UV) illumination, followed by etching, improves the stability of hydrogenated amorphous-silicon thin films against subsequent light-induced degradation of photosensitivity. The etch removes a heavily damaged layer extending about 100 nm below the surface, but beneath the damage, the UV has improved the stability of 200 to 300 nm of bulk film. The open-circuit voltage of Schottky solar cells is also stabilized by UV-etch treatment. Possible mechanisms are discussed.

  8. Factors affecting light-induced excess conductivity in doping-modulated amorphous silicon superlattices

    SciTech Connect

    Su, F.; Levine, S.; Vanier, P.E.; Kampas, F.J.

    1986-03-15

    Doping-modulated amorphous silicon semiconducting films which exhibit the phenomenon of light-induced excess conductivity (LEC) have been made by silane glow discharge in a single-chamber system. This phenomenon shows a strong dependence on substrate temperature and process gas composition. The LEC effect decreases for very small and very large layer thickness. There also seems to be an optimum defect density for producing large effects.

  9. Magneto-optical switch with amorphous silicon waveguides on magneto-optical garnet

    NASA Astrophysics Data System (ADS)

    Ishida, Eiichi; Miura, Kengo; Shoji, Yuya; Mizumoto, Tetsuya; Nishiyama, Nobuhiko; Arai, Shigehisa

    2016-08-01

    We fabricated a magneto-optical (MO) switch with a hydrogenated amorphous silicon waveguide on an MO garnet. The switch is composed of a 2 × 2 Mach–Zehnder interferometer (MZI). The switch state is controlled by an MO phase shift through a magnetic field generated by a current flowing in an electrode located on the MZI. The switching operation was successfully demonstrated with an extinction ratio of 11.7 dB at a wavelength of 1550 nm.

  10. Failure analysis of thin-film amorphous-silicon solar-cell modules

    NASA Technical Reports Server (NTRS)

    Kim, Q.

    1984-01-01

    A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

  11. Tandem solar cells made from amorphous silicon and polymer bulk heterojunction sub-cells.

    PubMed

    Park, Sung Heum; Shin, Insoo; Kim, Kwang Ho; Street, Robert; Roy, Anshuman; Heeger, Alan J

    2015-01-14

    A tandem solar cell based on a combination of an amorphous silicon (a-Si) and polymer solar cell (PSC) is demonstrated. As these tandem devices can be readily fabricated by low-cost methods, they require only a minor increase in the total manufacturing cost. Therefore, a combination of a-Si and PSC provides a compelling solution to reduce the cost of electricity produced by photovoltaics.

  12. Tandem solar cells made from amorphous silicon and polymer bulk heterojunction sub-cells.

    PubMed

    Park, Sung Heum; Shin, Insoo; Kim, Kwang Ho; Street, Robert; Roy, Anshuman; Heeger, Alan J

    2015-01-14

    A tandem solar cell based on a combination of an amorphous silicon (a-Si) and polymer solar cell (PSC) is demonstrated. As these tandem devices can be readily fabricated by low-cost methods, they require only a minor increase in the total manufacturing cost. Therefore, a combination of a-Si and PSC provides a compelling solution to reduce the cost of electricity produced by photovoltaics. PMID:25410395

  13. Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H)

    SciTech Connect

    Nurdjaja, I.; Schiff, E.A.

    1997-07-01

    The authors present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

  14. Fluctuating defect density probed with noise spectroscopy in hydrogenated amorphous silicon

    SciTech Connect

    Verleg, P.A.W.E.; Uca, O.; Dijkhuis, J.I.

    1997-07-01

    Resistance fluctuations have been studied in hydrogenated amorphous silicon in the temperature range between 300 K and 450 K. The primary noise source has a power spectrum of approximately 1/f and is ascribed to hydrogen motion. Hopping of weakly bound hydrogen is thermally activated at such low temperatures with an average activation energy of 0.85 eV. The attempt rate amounts to 7 {center_dot} 10{sup 12} s{sup {minus}1}.

  15. High electric field effects on the thermal generation in hydrogenated amorphous silicon

    SciTech Connect

    Ilie, A.; Equer, B.

    1997-07-01

    The authors have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.

  16. Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor

    DOEpatents

    Hanak, Joseph J.

    1985-06-25

    An improved method and apparatus for the controlled deposition of a layer of hydrogenated amorphous silicon on a substrate. Means is provided for the illumination of the coated surface of the substrate and measurement of the resulting photovoltage at the outermost layer of the coating. Means is further provided for admixing amounts of p type and n type dopants to the reactant gas in response to the measured photovoltage to achieve a desired level and type of doping of the deposited layer.

  17. 75 FR 51285 - In the Matter of Certain Flat Panel Digital Televisions and Components Thereof; Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-19

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION In the Matter of Certain Flat Panel Digital Televisions and Components Thereof; Notice of... that information on this matter can be obtained by contacting the Commission's TDD terminal on...

  18. Amorphous silicon thin films: The ultimate lightweight space solar cell

    NASA Technical Reports Server (NTRS)

    Vendura, G. J., Jr.; Kruer, M. A.; Schurig, H. H.; Bianchi, M. A.; Roth, J. A.

    1994-01-01

    Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

  19. Permanent fine tuning of silicon microring devices by femtosecond laser surface amorphization and ablation.

    PubMed

    Bachman, Daniel; Chen, Zhijiang; Fedosejevs, Robert; Tsui, Ying Y; Van, Vien

    2013-05-01

    We demonstrate the fine tuning capability of femtosecond laser surface modification as a permanent trimming mechanism for silicon photonic components. Silicon microring resonators with a 15 µm radius were irradiated with single 400 nm wavelength laser pulses at varying fluences. Below the laser ablation threshold, surface amorphization of the crystalline silicon waveguides yielded a tuning rate of 20 ± 2 nm/J · cm(-2)with a minimum resonance wavelength shift of 0.10nm. Above that threshold, ablation yielded a minimum resonance shift of -1.7 nm. There was some increase in waveguide loss for both trimming mechanisms. We also demonstrated the application of the method by using it to permanently correct the resonance mismatch of a second-order microring filter.

  20. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.

    PubMed

    Yang, Jun; Bhattacharya, Pallab

    2008-03-31

    The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a:Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of approximately 10 dB/cm at a wavelength of 1.05 microm. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 microm-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets.

  1. Surface roughening during plasma-enhanced chemical-vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates

    NASA Astrophysics Data System (ADS)

    Tanenbaum, D. M.; Laracuente, A. L.; Gallagher, Alan

    1997-08-01

    The morphology of a series of thin films of hydrogenated amorphous silicon (a-Si:H) grown by plasma-enhanced chemical-vapor deposition (PECVD) is studied using scanning tunneling microscopy. The substrates were atomically flat, oxide-free, single-crystal silicon. Films were grown in a PECVD chamber directly connected to a surface analysis chamber with no air exposure between growth and measurement. The homogeneous roughness of the films increases with film thickness. The quantification of this roughening is achieved by calculation of both rms roughness and lateral correlation lengths of the a-Si:H film surface from the height difference correlation functions of the measured topographs. Homogeneous roughening occurs over the film surface due to the collective behavior of the flux of depositing radical species and their interactions with the growth surface.

  2. Surface roughening during plasma-enhanced chemical-vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates

    SciTech Connect

    Tanenbaum, D.M.; Laracuente, A.L.; Gallagher, A.

    1997-08-01

    The morphology of a series of thin films of hydrogenated amorphous silicon (a-Si:H) grown by plasma-enhanced chemical-vapor deposition (PECVD) is studied using scanning tunneling microscopy. The substrates were atomically flat, oxide-free, single-crystal silicon. Films were grown in a PECVD chamber directly connected to a surface analysis chamber with no air exposure between growth and measurement. The homogeneous roughness of the films increases with film thickness. The quantification of this roughening is achieved by calculation of both rms roughness and lateral correlation lengths of the a-Si:H film surface from the height difference correlation functions of the measured topographs. Homogeneous roughening occurs over the film surface due to the collective behavior of the flux of depositing radical species and their interactions with the growth surface. {copyright} {ital 1997} {ital The American Physical Society}

  3. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei; Jiang, Xuening; Xu, Hongxia

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  4. Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films

    SciTech Connect

    Wen, Guozhi; Zeng, Xiangbin Wen, Xixin; Liao, Wugang

    2014-04-28

    Silicon quantum dots (QDs) embedded in hydrogenated amorphous Si-rich silicon carbide (α-SiC:H) thin films were realized by plasma-enhanced chemical vapor deposition process and post-annealing. Fluorescence spectroscopy was used to characterize the room-temperature photoluminescence properties. X-ray photoelectron spectroscopy was used to analyze the element compositions and bonding configurations. Ultraviolet visible spectroscopy, Raman scattering, and high-resolution transmission electron microscopy were used to display the microstructural properties. Photoluminescence measurements reveal that there are six emission sub-bands, which behave in different ways. The peak wavelengths of sub-bands P1, P2, P3, and P6 are pinned at about 425.0, 437.3, 465.0, and 591.0 nm, respectively. Other two sub-bands, P4 is red-shifted from 494.6 to 512.4 nm and P5 from 570.2 to 587.8 nm with temperature increasing from 600 to 900 °C. But then are both blue-shifted, P4 to 500.2 nm and P5 to 573.8 nm from 900 to 1200 °C. The X-ray photoelectron spectroscopy analysis shows that the samples are in Si-rich nature, Si-O and Si-N bonds consumed some silicon atoms. The structure characterization displays that a separation between silicon phase and SiC phase happened; amorphous and crystalline silicon QDs synthesized with increasing the annealing temperature. P1, P2, P3, and P6 sub-bands are explained in terms of defect-related emission, while P4 and P5 sub-bands are explained in terms of quantum confinement effect. A correlation between the peak wavelength shift, as well as the integral intensity of the spectrum and crystallization of silicon QDs is supposed. These results help clarify the probable luminescence mechanisms and provide the possibility to optimize the optical properties of silicon QDs in Si-rich α-SiC: H materials.

  5. Ring artifact corrections in flat-panel detector based cone beam CT

    NASA Astrophysics Data System (ADS)

    Anas, Emran Mohammad Abu; Kim, Jaegon; Lee, Soo Yeol; Hasan, Md. Kamrul

    2011-03-01

    The use of flat-panel detectors (FPDs) is becoming increasingly popular in the cone beam volume and multi-slice CT imaging. But due to the deficient semiconductor array processing, the diagnostic quality of the FPD-based CT images in both CT systems is degraded by different types of artifacts known as the ring and radiant artifacts. Several techniques have been already published in eliminating the stripe artifacts from the projection data of the multi-slice CT system or in other words, from the sinogram image with a view to suppress the ring and radiant artifacts from the 2-D reconstructed CT images. On the other hand, till now a few articles have been reported to remove the artifacts from the cone beam CT images. In this paper, an effective approach is presented to eliminate the artifacts from the cone beam projection data using the sinogram based stripe artifact removal methods. The improvement in the required diagnostic quality is achieved by applying them both in horizontal and vertical sinograms constituted sequentially from the stacked cone beam projections. Finally, some real CT images have been used to demonstrate the effectiveness of the proposed technique in eliminating the ring and radiant artifacts from the cone beam volume CT images. A comparative study with the conventional sinogram based approaches is also presented to see the effectiveness of the proposed technique.

  6. An Output Channel Nonuniformity Compensation Driving Method in Flat Panel Display Driving Circuits

    NASA Astrophysics Data System (ADS)

    Kim, Jin-Ho; Ahn, Soon-Sung; Kwon, Christine H.; Kim, Seon-Yung; Lee, Jae-Sic; Choi, Byong-Deok

    2006-12-01

    Modern flat panel displays, including thin-film transistor liquid crystal displays (TFT-LCDs) and organic light-emitting diodes (OLEDs), pursue more and more natural color expression. This requires the data driving system should produce very fine and accurate signal voltages or currents. Especially, the uniformity among channels of a driving system is critically important because the color or luminance differences among columns are easily noticeable. We propose a simple and efficient driving method for solving the artifacts caused by the existing nonuniformity among channels of a driving system, and confirms its impact by simulations using C-programming. The nonuniformity among channels mostly stem from the random offset of the output circuits of a driving system, which in turn is caused by the process variations. The proposed driving method shares N-output circuits between N-output channels such that the existing offsets of the channels are averaged out. Thus, the output signal error due to the offsets spreads out among the channels, improving the uniformity between the channels.

  7. The forced radiation efficiency of finite size flat panels that are excited by incident sound.

    PubMed

    Davy, John L

    2009-08-01

    The radiation efficiency of an infinite flat panel that radiates a plane wave into a half space is equal to the inverse of the cosine of the angle between the direction of propagation of the plane wave and the normal to the panel. The fact that this radiation efficiency tends to infinity as the angle tends to 90 degrees causes problems with simple theories of sound insulation. Sato calculated numerical values of radiation efficiency for a finite size rectangular panel in an infinite baffle whose motion is forced by sound incident at an angle to the normal from the other side. This paper presents a simple two dimensional analytic strip theory, which agrees reasonably well with Sato's numerical calculations for a rectangular panel. This leads to the conclusion that it is mainly the length of the panel in the direction of radiation, rather than its width that is important in determining its radiation efficiency. A low frequency correction is added to the analytic strip theory. The theory is analytically integrated over all angles of incidence, with the appropriate weighting function, to obtain the diffuse sound field forced radiation efficiency of a panel. PMID:19640035

  8. Dynamic flat panel detector versus image intensifier in cardiac imaging: dose and image quality

    NASA Astrophysics Data System (ADS)

    Vano, E.; Geiger, B.; Schreiner, A.; Back, C.; Beissel, J.

    2005-12-01

    The practical aspects of the dosimetric and imaging performance of a digital x-ray system for cardiology procedures were evaluated. The system was configured with an image intensifier (II) and later upgraded to a dynamic flat panel detector (FD). Entrance surface air kerma (ESAK) to phantoms of 16, 20, 24 and 28 cm of polymethyl methacrylate (PMMA) and the image quality of a test object were measured. Images were evaluated directly on the monitor and with numerical methods (noise and signal-to-noise ratio). Information contained in the DICOM header for dosimetry audit purposes was also tested. ESAK values per frame (or kerma rate) for the most commonly used cine and fluoroscopy modes for different PMMA thicknesses and for field sizes of 17 and 23 cm for II, and 20 and 25 cm for FD, produced similar results in the evaluated system with both technologies, ranging between 19 and 589 µGy/frame (cine) and 5 and 95 mGy min-1 (fluoroscopy). Image quality for these dose settings was better for the FD version. The 'study dosimetric report' is comprehensive, and its numerical content is sufficiently accurate. There is potential in the future to set those systems with dynamic FD to lower doses than are possible in the current II versions, especially for digital cine runs, or to benefit from improved image quality.

  9. Contrast-detail analysis of three flat panel detectors for digital radiography

    SciTech Connect

    Borasi, Giovanni; Samei, Ehsan; Bertolini, Marco; Nitrosi, Andrea; Tassoni, Davide

    2006-06-15

    In this paper we performed a contrast detail analysis of three commercially available flat panel detectors, two based on the indirect detection mechanism (GE Revolution XQ/i, system A, and Trixell/Philips Pixium 4600, system B) and one based on the direct detection mechanism (Hologic DirectRay DR 1000, system C). The experiment was conducted using standard x-ray radiation quality and a widely used contrast-detail phantom. Images were evaluated using a four alternative forced choice paradigm on a diagnostic-quality softcopy monitor. At the low and intermediate exposures, systems A and B gave equivalent performances. At the high dose levels, system A performed better than system B in the entire range of target sizes, even though the pixel size of system A was about 40% larger than that of system B. At all the dose levels, the performances of the system C (direct system) were lower than those of system A and B (indirect systems). Theoretical analyses based on the Perception Statistical Model gave similar predicted SNR{sub T} values corresponding to an observer efficiency of about 0.08 for systems A and B and 0.05 for system C.

  10. Thermal Reactor Model for Large-Scale Algae Cultivation in Vertical Flat Panel Photobioreactors.

    PubMed

    Endres, Christian H; Roth, Arne; Brück, Thomas B

    2016-04-01

    Microalgae can grow significantly faster than terrestrial plants and are a promising feedstock for sustainable value added products encompassing pharmaceuticals, pigments, proteins and most prominently biofuels. As the biomass productivity of microalgae strongly depends on the cultivation temperature, detailed information on the reactor temperature as a function of time and geographical location is essential to evaluate the true potential of microalgae as an industrial feedstock. In the present study, a temperature model for an array of vertical flat plate photobioreactors is presented. It was demonstrated that mutual shading of reactor panels has a decisive effect on the reactor temperature. By optimizing distance and thickness of the panels, the occurrence of extreme temperatures and the amplitude of daily temperature fluctuations in the culture medium can be drastically reduced, while maintaining a high level of irradiation on the panels. The presented model was developed and applied to analyze the suitability of various climate zones for algae production in flat panel photobioreactors. Our results demonstrate that in particular Mediterranean and tropical climates represent favorable locations. Lastly, the thermal energy demand required for the case of active temperature control is determined for several locations. PMID:26950078

  11. [Digital thorax radiography: flat-panel detector or storage phosphor plates].

    PubMed

    Schaefer-Prokop, C; Uffmann, M; Sailer, J; Kabalan, N; Herold, C; Prokop, M

    2003-05-01

    Flat panel detectors are characterized by improved handling and increased dose efficiency. This allows for increasing of work flow efficiency and for reducing the exposure dose by about 50% compared to current systems with a sensitivity of 400. Whether the increased dose efficiency should be used to reduce acquisition dose or to increase image quality in the chest, will be shown by further clinical experience and will be also determined by the subjective preference of the radiologists. The decreased level of image noise opens new perspectives for image processing that way that elaborated multifrequency processing allows for optimizing the display of very small and low contrast structures that was so far limited by overlying image noise. Specialized applications of dual energy subtraction and temporal subtraction will also profit by the new detector technology and will be further driven forward in context with applications such as computed assisted diagnosis even though this is currently not yet broadly applied. Storage phosphor radiography still represents an important alternative technique based on its larger flexibility with respect to equipment configuration, its broader application options in intensive care and emergency radiology and due to economic reasons. These facts are further underlined by the fact that image quality also in storage phosphor radiography could be constantly increased by improving detector technology and image processing and consequently has a high standard. PMID:12764583

  12. Planar cone-beam computed tomography with a flat-panel detector

    NASA Astrophysics Data System (ADS)

    Kim, S. H.; Kim, D. W.; Youn, H.; Kim, D.; Kam, S.; Jeon, H.; Kim, H. K.

    2015-12-01

    For a dedicated x-ray inspection of printed-circuit boards (PCBs), a bench-top planar cone-beam computed tomography (pCT) system with a flat-panel detector has been built in the laboratory. The system adopts the tomosynthesis technique that can produce cross-sectional images parallel to the axis of rotation for a limited angular range. For the optimal operation of the system and further improvement in the next design, we have evaluated imaging performances, such as modulation-transfer function, noise-power spectrum, and noise-equivalent number of quanta. The performances are comparatively evaluated with the coventional cone-beam CT (CBCT) acquisition for various scanning angular ranges, applied tube voltages, and geometrical magnification factors. The pCT scan shows a poorer noise performance than the conventional CBCT scan because of less number of projection views used for reconstruction. However, the pCT shows a better spatial-resolution performance than the CBCT. Because the image noise can be compensated by an elevated exposure level during scanning, the pCT can be a useful modality for the PCB inspection that requires higher spatial-resolution performance.

  13. Compact flat-panel gas-gap heat switch operating at 295 K.

    PubMed

    Krielaart, M A R; Vermeer, C H; Vanapalli, S

    2015-11-01

    Heat switches are devices that can change from a thermally conducting (on-) state to an insulating (off-) state whenever the need arises. They enable adaptive thermal management strategies in which cooling rates are altered either spatially or temporally, leading to a substantial reduction in the energy and mass budget of a large range of systems. State-of-the-art heat switches are only rarely employed in thermal system architectures, since they are rather bulky and have a limited thermal performance (expressed as the heat transfer ratio between the on- and off-state heat conductance). Using selective laser melting additive manufacturing technology, also known as 3D printing, we developed a compact flat-panel gas-gap heat switch that offers superior thermal performance, is simpler and more economic to produce and assemble, contains no moving parts, and is more reliable because it lacks welded joints. The manufactured rectangular panel heat switch has frontal device dimensions of 10 cm by 10 cm, thickness of 3.2 mm and weighs just 121 g. An off heat conductance of 0.2 W/K and on-off heat conductance ratio of 38 is observed at 295 K. PMID:26628181

  14. Compact flat-panel gas-gap heat switch operating at 295 K

    NASA Astrophysics Data System (ADS)

    Krielaart, M. A. R.; Vermeer, C. H.; Vanapalli, S.

    2015-11-01

    Heat switches are devices that can change from a thermally conducting (on-) state to an insulating (off-) state whenever the need arises. They enable adaptive thermal management strategies in which cooling rates are altered either spatially or temporally, leading to a substantial reduction in the energy and mass budget of a large range of systems. State-of-the-art heat switches are only rarely employed in thermal system architectures, since they are rather bulky and have a limited thermal performance (expressed as the heat transfer ratio between the on- and off-state heat conductance). Using selective laser melting additive manufacturing technology, also known as 3D printing, we developed a compact flat-panel gas-gap heat switch that offers superior thermal performance, is simpler and more economic to produce and assemble, contains no moving parts, and is more reliable because it lacks welded joints. The manufactured rectangular panel heat switch has frontal device dimensions of 10 cm by 10 cm, thickness of 3.2 mm and weighs just 121 g. An off heat conductance of 0.2 W/K and on-off heat conductance ratio of 38 is observed at 295 K.

  15. Development of patient collation system by kinetic analysis for chest dynamic radiogram with flat panel detector

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Yuichiro; Kodera, Yoshie

    2006-03-01

    In the picture archiving and communication system (PACS) environment, it is important that all images be stored in the correct location. However, if information such as the patient's name or identification number has been entered incorrectly, it is difficult to notice the error. The present study was performed to develop a system of patient collation automatically for dynamic radiogram examination by a kinetic analysis, and to evaluate the performance of the system. Dynamic chest radiographs during respiration were obtained by using a modified flat panel detector system. Our computer algorithm developed in this study was consisted of two main procedures, kinetic map imaging processing, and collation processing. Kinetic map processing is a new algorithm to visualize a movement for dynamic radiography; direction classification of optical flows and intensity-density transformation technique was performed. Collation processing consisted of analysis with an artificial neural network (ANN) and discrimination for Mahalanobis' generalized distance, those procedures were performed to evaluate a similarity of combination for the same person. Finally, we investigated the performance of our system using eight healthy volunteers' radiographs. The performance was shown as a sensitivity and specificity. The sensitivity and specificity for our system were shown 100% and 100%, respectively. This result indicated that our system has excellent performance for recognition of a patient. Our system will be useful in PACS management for dynamic chest radiography.

  16. Reliability of myocardial perfusion quantification in angiography using a digital flat panel cardiac system

    NASA Astrophysics Data System (ADS)

    Perrin, Muriel; Vaillant, Regis; Gavit-Houdant, Laurence; Lienard, Jean; Benali, Karim

    2002-04-01

    Discordance between lesion severity from angiocardiography and physiological effects has been reported elsewhere. Quantification of myocardial perfusion during the angiography procedure may supply additional information about short- and long-term outcomes and may be helpful for clinical decision making. In previous works, myocardial perfusion has been assessed using time density curves (TDC), which represent the contrast medium dilution over time in the myocardium. The mean transit time (MTT), derived from the TDC, has been reported as a good indicator of the regional myocardial perfusion. Our objective is to estimate the accuracy and reproducibility of MTT estimation on digital flat panel (DFP) images. We have simulated typical myocardium TDC obtained with a DFP cardiac system (Innova 2000, GE), taking into account scatter and noise. Logarithmic or linear subtractions have been applied to derive a contrast medium concentration proportional quantity from image intensity. A non-linear minimisation realises the model curve fitting. MTT estimates are more stable with linear subtraction in presence of scatter. However logarithmic subtraction presents smaller bias when scatter level is small. Both approaches are equally sensible to image noise. Linear subtraction should be preferred. Image noise has a high influence on MTT accuracy and we may reduce.

  17. A compact high resolution flat panel PET detector based on the new 4-side buttable MPPC for biomedical applications

    PubMed Central

    Wang, Qiang; Wen, Jie; Ravindranath, Bosky; O’Sullivan, Andrew W.; Catherall, David; Li, Ke; Wei, Shouyi; Komarov, Sergey; Tai, Yuan-Chuan

    2015-01-01

    Compact high-resolution panel detectors using virtual pinhole (VP) PET geometry can be inserted into existing clinical or pre-clinical PET systems to improve regional spatial resolution and sensitivity. Here we describe a compact panel PET detector built using the new Though Silicon Via (TSV) multi-pixel photon counters (MPPC) detector. This insert provides high spatial resolution and good timing performance for multiple bio-medical applications. Because the TSV MPPC design eliminates wire bonding and has a package dimension which is very close to the MPPC’s active area, it is 4-side buttable. The custom designed MPPC array (based on Hamamatsu S12641-PA-50(x)) used in the prototype is composed of 4 × 4 TSV-MPPC cells with a 4.46 mm pitch in both directions. The detector module has 16 × 16 lutetium yttrium oxyorthosilicate (LYSO) crystal array, with each crystal measuring 0.92 × 0.92 × 3 mm3 with 1.0 mm pitch. The outer diameter of the detector block is 16.8 × 16.8 mm2. Thirty-two such blocks will be arranged in a 4 × 8 array with 1 mm gaps to form a panel detector with detection area around 7 cm × 14 cm in the full-size detector. The flood histogram acquired with Ge-68 source showed excellent crystal separation capability with all 256 crystals clearly resolved. The detector module’s mean, standard deviation, minimum (best) and maximum (worst) energy resolution were 10.19%, +/−0.68%, 8.36% and 13.45% FWHM, respectively. The measured coincidence time resolution between the block detector and a fast reference detector (around 200 ps single photon timing resolution) was 0.95 ns. When tested with Siemens Cardinal electronics the performance of the detector blocks remain consistent. These results demonstrate that the TSV-MPPC is a promising photon sensor for use in a flat panel PET insert composed of many high resolution compact detector modules. PMID:26085702

  18. A compact high resolution flat panel PET detector based on the new 4-side buttable MPPC for biomedical applications

    NASA Astrophysics Data System (ADS)

    Wang, Qiang; Wen, Jie; Ravindranath, Bosky; O`Sullivan, Andrew W.; Catherall, David; Li, Ke; Wei, Shouyi; Komarov, Sergey; Tai, Yuan-Chuan

    2015-09-01

    Compact high-resolution panel detectors using virtual pinhole (VP) PET geometry can be inserted into existing clinical or pre-clinical PET systems to improve regional spatial resolution and sensitivity. Here we describe a compact panel PET detector built using the new Though Silicon Via (TSV) multi-pixel photon counters (MPPC) detector. This insert provides high spatial resolution and good timing performance for multiple bio-medical applications. Because the TSV MPPC design eliminates wire bonding and has a package dimension which is very close to the MPPC's active area, it is 4-side buttable. The custom designed MPPC array (based on Hamamatsu S12641-PA-50(x)) used in the prototype is composed of 4×4 TSV-MPPC cells with a 4.46 mm pitch in both directions. The detector module has 16×16 lutetium yttrium oxyorthosilicate (LYSO) crystal array, with each crystal measuring 0.92×0.92×3 mm3 with 1.0 mm pitch. The outer diameter of the detector block is 16.8×16.8 mm2. Thirty-two such blocks will be arranged in a 4×8 array with 1 mm gaps to form a panel detector with detection area around 7 cm×14 cm in the full-size detector. The flood histogram acquired with 68Ge source showed excellent crystal separation capability with all 256 crystals clearly resolved. The detector module's mean, standard deviation, minimum (best) and maximum (worst) energy resolution were 10.19%, ±0.68%, 8.36% and 13.45% FWHM, respectively. The measured coincidence time resolution between the block detector and a fast reference detector (around 200 ps single photon timing resolution) was 0.95 ns. When tested with Siemens Cardinal electronics the performance of the detector blocks remain consistent. These results demonstrate that the TSV-MPPC is a promising photon sensor for use in a flat panel PET insert composed of many high resolution compact detector modules.

  19. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

    NASA Astrophysics Data System (ADS)

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.

  20. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial.

    PubMed

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-20

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 10(6) and 3.72 × 10(6) respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.

  1. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

    PubMed Central

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications. PMID:26785682

  2. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial.

    PubMed

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 10(6) and 3.72 × 10(6) respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications. PMID:26785682

  3. Influence of ion induced amorphicity on the diffusion of gold into silicon

    SciTech Connect

    Ehrhardt, J.; Klimmer, A.; Eisenmenger, J.; Mueller, Th.; Boyen, H.-G.; Ziemann, P.; Biskupek, J.; Kaiser, U.

    2006-09-15

    It is experimentally demonstrated that, after ion irradiating 60 nm thick Au films on Si substrates with 230 keV Ar{sup +} ions, annealing conditions can be found leading to strong diffusional contrasts between bombarded and unbombarded areas. While Au readily diffuses into the bombarded part of the sample at 310 deg. C, its diffusion is still completely blocked under identical conditions in the unbombarded parts. Clear evidence is provided that this diffusional contrast is due to bombardment induced amorphization of the underlying Si substrate. The amorphous Silicon (a-Si), however, has to extend right to the Au/Si interface, since any intermediate crystalline layer will suppress the diffusional contrast. An example for this latter situation is realized by performing the ion bombardment prior to the evaporation of the top Au layer leading to a still crystalline Si surface layer, which is found to act as a barrier against Au diffusion at 310 deg. C. In accordance with the idea that a-Si, independent of its specific preparation, causes the observed Au diffusion enhancement, the effect is also found for a-Si prepared by evaporation at ambient temperature. In that case an even higher Au diffusion coefficient is obtained than for Si amorphized by ion bombardment pointing to subtle structural differences between both types of amorphous Si.

  4. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    PubMed Central

    Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

    2016-01-01

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. PMID:26751446

  5. Bimetallic non-alloyed NPs for improving the broadband optical absorption of thin amorphous silicon substrates

    PubMed Central

    2014-01-01

    We propose the use of bimetallic non-alloyed nanoparticles (BNNPs) to improve the broadband optical absorption of thin amorphous silicon substrates. Isolated bimetallic NPs with uniform size distribution on glass and silicon are obtained by depositing a 10-nm Au film and annealing it at 600°C; this is followed by an 8-nm Ag film annealed at 400°C. We experimentally demonstrate that the deposition of gold (Au)-silver (Ag) bimetallic non-alloyed NPs (BNNPs) on a thin amorphous silicon (a-Si) film increases the film's average absorption and forward scattering over a broad spectrum, thus significantly reducing its total reflection performance. Experimental results show that Au-Ag BNNPs fabricated on a glass substrate exhibit resonant peaks at 437 and 540 nm and a 14-fold increase in average forward scattering over the wavelength range of 300 to 1,100 nm in comparison with bare glass. When deposited on a 100-nm-thin a-Si film, Au-Ag BNNPs increase the average absorption and forward scattering by 19.6% and 95.9% compared to those values for Au NPs on thin a-Si and plain a-Si without MNPs, respectively, over the 300- to 1,100-nm range. PMID:24725390

  6. Band offsets at the crystalline / hydrogenated amorphous silicon interface from first-principles

    NASA Astrophysics Data System (ADS)

    Hazrati, Ebrahim; Jarolimek, Karol; de Wijs, Gilles A.; InstituteMolecules; Materials Team

    2015-03-01

    The heterojunction formed between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H) is a key component of a new type of high-efficiency silicon solar cell. Since a-Si:H has a larger band gap than c-Si, band offsets are formed at the interface. A band offset at the minority carrier band will mitigate recombination and lead to an increased efficiency. Experimental values of band offsets scatter in a broad range. However, a recent meta-analysis of the results (W. van Sark et al.pp. 405, Springer 2012) gives a larger valence offset (0.40 eV) than the conduction offset (0.15 eV). In light of the conflicting reports our goal is to calculate the band offsets at the c-Si/a-Si:H interface from first-principles. We have prepared several atomistic models of the interface. The crystalline part is terminated with (111) surfaces on both sides. The amorphous structure is generated by simulating an annealing process at 1100 K, with DFT molecular dynamics. Once the atomistic is ready it can be used to calculate the electronic structure of the interface. Our preliminary results show that the valence offset is larger than the conduction band offset.

  7. Effect of surface morphology on laser-induced crystallization of amorphous silicon thin films

    NASA Astrophysics Data System (ADS)

    Huang, Lu; Jin, Jing; Wang, Guohua; Shi, Weimin; Yang, Weiguang; Yuan, Zhijun; Cao, Zechun; Zhou, Jun; Lou, Qihong; Liu, Jin; Wei, Guangpu

    2013-12-01

    The effect of surface morphology on laser-induced crystallization of hydrogenated intrinsic amorphous silicon (a-Si:H) thin films deposited by PECVD is studied in this paper. The thin films are irritated by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser. An effective melting model is built to identify the variation of melting regime influenced by laser crystallization. Based on the experimental results, the established correlation between the grain growth characterized by AFM and the crystalline fraction (Xc) obtained from Raman spectroscopy suggests that the crystallized process form amorphous phase to polycrystalline phase. Therefore, the highest crystalline fraction (Xc) is obtained by a optimized laser energy density.

  8. Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon.

    PubMed

    Kail, F; Molera, J; Farjas, J; Roura, P; Secouard, C; Roca i Cabarrocas, P

    2012-03-01

    The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5 361). According to the classical theory of nucleation, this variation should produce large differences in the crystallization kinetics leading to crystallization temperatures and activation energies exceeding 550 °C and 1.7 eV, respectively, the 'standard' values measured for a-Si obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar for all the samples studied and has no correlation with the crystallization enthalpy. This discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains that are almost identical in all samples, independently of their crystallization enthalpy. Probably the existence of microscopic inhomogeneities also plays a crucial role in the crystallization kinetics of other amorphous materials and glasses.

  9. Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Kail, F.; Molera, J.; Farjas, J.; Roura, P.; Secouard, C.; Cabarrocas, P. Roca i.

    2012-03-01

    The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5 361). According to the classical theory of nucleation, this variation should produce large differences in the crystallization kinetics leading to crystallization temperatures and activation energies exceeding 550 °C and 1.7 eV, respectively, the ‘standard’ values measured for a-Si obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar for all the samples studied and has no correlation with the crystallization enthalpy. This discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains that are almost identical in all samples, independently of their crystallization enthalpy. Probably the existence of microscopic inhomogeneities also plays a crucial role in the crystallization kinetics of other amorphous materials and glasses.

  10. Fractal and spherulitic morphology of silicon nitride crystallized from amorphous films

    SciTech Connect

    Kahn, A.D.; Grabowski, K.S.; Donovan, E.P.; Carosella, C.A.; Hubler, G.K.

    1988-01-01

    Thin films of substoichiometric silicon nitride were grown by the use of ion beam assisted deposition. The amorphous films were annealed at high temperatures (1017-1200C) to produce crystalline alpha-Si3N4. Both highly symmetric spherulitic crystal morphologies and irregular fractal aggregates were seen. In the latter case, a fractal dimension of 1.2 was measured. These two macroscopically different forms possessed correspondingly different microstructures. The morphologies were found to be determined by the temperature of the anneal.

  11. A programmable, low noise, multichannel asic for readout of pixelated amorphous silicon arrays

    SciTech Connect

    Yarema, R. J.

    1998-08-01

    Pixelated amorphous silicon arrays used for detecting X-rays have a number of special requirements for the readout electronics. Because the pixel detector is a high density array, custom integrated circuits are very desirable for reading out the column signals and addressing the rows of pixels to be read out. In practice, separate chips are used for readout and addressing. This paper discusses a custom integrated circuit for processing the analog column signals. The chip has 32 channels of low noise integrators followed by sample and hold circuits which perform a correlated double sample. The chip has several programmable features including gain, bandwidth, and readout configuration.

  12. Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films

    NASA Astrophysics Data System (ADS)

    He, Jian; Li, Wei; Xu, Rui; Qi, Kang-Cheng; Jiang, Ya-Dong

    2011-12-01

    The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films. Results reveal that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.

  13. Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism

    NASA Astrophysics Data System (ADS)

    Toyoda, H.; Sugai, H.; Kato, K.; Yoshida, A.; Okuda, T.

    1986-06-01

    The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic-magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all species fluxes. Comparison of these films reveals the significant role of hydrogen in the surface reactions. Hydrogen breaks the Si-Si bond, decreases the sticking probability of the Si atom, and replaces the SiH bond by a SiH2 bond to increase the hydrogen content of the films.

  14. Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition

    NASA Astrophysics Data System (ADS)

    Rocheleau, Richard E.; Hegedus, Steven S.; Buchanan, Wayne A.; Jackson, Scott C.

    1987-07-01

    A novel photochemical vapor deposition (photo-CVD) reactor having a flexible ultraviolet-transparent Teflon curtain and a secondary gas flow to eliminate deposition on the window has been used to deposit amorphous silicon films and p-i-n solar cells. The background levels of atmospheric contaminants (H2O, CO2, N2) depend strongly on the vacuum procedures but not on the presence of a Teflon curtain in the reactor. Intrinsic films with a midgap density of states of 3×1015 eV-1 cm-3 and all-photo-CVD pin solar cells with efficiencies of 8.5% have been deposited.

  15. The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection

    SciTech Connect

    Perez-Mendez, V.; Cho, G.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; Street, R.A.

    1989-04-01

    We outline the characteristics of thick hydrogenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and ..gamma..-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented. 17 refs., 12 figs., 2 tabs.

  16. High efficiency multijunction amorphous silicon alloy-based solar cells and modules

    SciTech Connect

    Guha, S.; Yang, J.; Banerjeee, A.; Glatfelter, T.; Hoffman, K.; Xu, X. )

    1994-06-30

    We have achieved initial efficiency of 11.4% as confirmed by National Renewable Energy Laboratory (NREL) on a multijunction amorphous silicon alloy photovoltaic module of one-square-foot-area. [bold This] [bold is] [bold the] [bold highest] [bold initial] [bold efficiency] [bold confirmed] [bold by] [bold NREL] [bold for] [bold any] [bold thin] [bold film] [bold photovoltaic] [bold module]. After light soaking for 1000 hours at 50 [degree]C under one-sun illumination, a module with initial efficiency of 11.1% shows a stabilized efficiency of 9.5%. Key factors that led to this high performance are discussed.

  17. Experimental observation of light trapping in hydrogenated amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Faughnan, B. W.

    1985-10-01

    Experimental evidence for light trapping in glass/conductive transparent oxide/p-i-n/ metal hydrogenated amorphous silicon solar cell structures is presented. A short-circuit current of 17.8 mA/sq cm has previously been reported for a cell made with this structure. The light trapping is treated by a modification of the Yablonovitch-Cody (YC) statistical theory of light trapping in textured layers (Yablonovitch and Cody, 1982). Reflection measurements show that 80 percent of the incident light is trapped. Quantum efficiency measurements made on cells with back electrode metals of different reflectivity are shown to be in agreement with the predictions of the YC theory.

  18. Review of amorphous silicon based particle detectors: the quest for single particle detection

    NASA Astrophysics Data System (ADS)

    Wyrsch, N.; Ballif, C.

    2016-10-01

    Hydrogenated amorphous silicon (a-Si:H) is attractive for radiation detectors because of its radiation resistance and processability over large areas with mature Si microfabrication techniques. While the use of a-Si:H for medical imaging has been very successful, the development of detectors for particle tracking and minimum-ionizing-particle detection has lagged, with almost no practical implementation. This paper reviews the development of various types of a-Si:H-based detectors and discusses their respective achievements and limitations. It also presents more recent developments of detectors that could potentially achieve single particle detection and be integrated in a monolithic fashion into a variety of applications.

  19. Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy

    SciTech Connect

    Sevastyanov, M. G.; Lobkov, V. S.; Shmelev, A. G.; Leontev, A. V.; Matuhin, V. L.; Bobyl, A. V.; Terukov, E. I.; Kukin, A. V.

    2013-10-15

    Experimental results on the electron relaxation time and diffusion coefficient in hydrogenated amorphous silicon films that exhibit intrinsic and electronic conductivity at room temperature are reported. It is found that, for these two types of films, the relaxation times are 1 ns and 465 ps and the diffusion coefficients are 0.54 and 0.83 cm{sup 2} s{sup -1}. It is established that, as the pulse intensity is increased, the decay time of the induced-grating signal shortens.

  20. Influence of deposition conditions on the 1/f noise in hydrogenated amorphous silicon

    SciTech Connect

    West, P.W.; Quicker, D.; Dyalsingh, H.M.; Kakalios, J.

    1997-07-01

    The electronic properties of a series of n-type doped hydrogenated amorphous silicon (a-Si:H) films grown with deposition rates ranging from 2 {angstrom}/s to 33 {angstrom}/s have been studied. Infrared absorption spectroscopy shows an increase in Si-H{sub 2} content with deposition rate, concurrent with a decreasing conductivity, increasing thermal equilibration relaxation time, and increasing disorder at the mobility edge as measured by the difference in thermopower and dark conductivity activation energies. The current 1/f noise properties become highly nonstationary, with increased variability and inapplicability of statistical analysis as the deposition rate increases.

  1. The Spatial Effects of Antenna Configuration in a Large Area Inductively Coupled Plasma System for Flat Panel Displays

    NASA Astrophysics Data System (ADS)

    Seon-Geun, Oh; Young-Jun, Lee; Jae-Hong, Jeon; Jong-Hyeon, Seo; Hee-Hwan, Choe

    2014-08-01

    Spatial distributions of plasma parameters such as electron density, electron temperature and electric potential were investigated using a commercial simulation software (COMSOLTM) to predict the effects of antenna configuration in a large area inductively coupled plasma (ICP) system for flat panel displays. Nine planar antenna sets were evenly placed above a ceramic window. While the electron density was influenced by both the input current and gas pressure, the electron temperature and electric potential were dominantly affected by the gas pressure.

  2. Using LROC analysis to evaluate detection accuracy of microcalcification clusters imaged with flat-panel CT mammography

    NASA Astrophysics Data System (ADS)

    Gong, Xing; Glick, Stephen J.; Vedula, Aruna A.

    2004-05-01

    The purpose of this study is to investigate the detectability of microcalcification clusters (MCCs) using CT mammography with a flat-panel detector. Compared with conventional mammography, CT mammography can provide improved discrimination between malignant and benign cases as it can provide the radiologist with more accurate morphological information on MCCs. In this study, two aspects of MCC detection with flat-panel CT mammography were examined: (1) the minimal size of MCCs detectable with mean glandular dose (MGD) used in conventional mammography; (2) the effect of different detector pixel size on the detectability of MCCs. A realistic computer simulation modeling x-ray transport through the breast, as well as both signal and noise propagation through the flat-panel imager, was developed to investigate these questions. Microcalcifications were simulated as calcium carbonate spheres with diameters set at the levels of 125, 150 and 175 μm. Each cluster consisted of 10 spheres spread randomly in a 6×6 mm2 region of interest (ROI) and the detector pixel size was set to 100×100, 200×200, or 300×300μm2. After reconstructing 100 projection sets for each case (half with signal present) with the cone-beam Feldkamp (FDK) algorithm, a localization receiver operating characteristic (LROC) study was conducted to evaluate the detectability of MCCs. Five observers chose the locations of cluster centers with correspondent confidence ratings. The average area under the LROC curve suggested that the 175 μm MCCs can be detected at a high level of confidence. Results also indicate that flat-panel detectors with pixel size of 200×200 μm2 are appropriate for detecting small targets, such as MCCs.

  3. Evaluation of the potential utility of flat panel CT for quantifying relative contrast enhancement

    SciTech Connect

    Jones, A. Kyle; Mahvash, Armeen

    2012-07-15

    Purpose: Certain directed oncologic therapies seek to take advantage of the fact that tumors are typically more susceptible to directed therapeutic agents than normal tissue owing to their extensive networks of poorly formed, leaky vasculature. If differences between the vascularity of normal and tumor tissues could be quantified, patients could be selected for or excluded from directed treatments on the basis of this difference. However, angiographic imaging techniques such as digital subtraction angiography (DSA) yield two-dimensional data that may be inadequate for this task. As a first step, the authors evaluated the feasibility of using a commercial implementation of flat panel computed tomography (FPCT) to quantify differences in enhancement of a simulated tumor compared with normal tissue based on differences in CT number measured in precontrast and postcontrast scans. Methods: To evaluate the FPCT scanner studied, the authors scanned several phantoms containing simulated normal and tumor tissues. In the first experiment, the authors used an anthropomorphic phantom containing inclusions representing normal, tumor, and bone tissue to evaluate the constancy of CT numbers in scans repeated at clinically relevant intervals of 1 and 3 min. The authors then scanned gelatin phantoms containing dilutions of iodinated contrast to evaluate the accuracy of relative contrast enhancement measurements for a clinical FPCT system. Data were analyzed using widely available software. Results: CT numbers measured in identical locations were constant over both scan intervals evaluated. Measured relative contrast enhancement values were accurate compared with known relative contrast enhancement values. Care must be taken to avoid artifacts in reconstructed images when placing regions of interest. Conclusions: Despite its limitations, FPCT in the interventional laboratory can be used to quantify relative contrast enhancement in phantoms. This is accomplished by measuring CT

  4. Performance of a direct-detection active matrix flat panel dosimeter (AMFPD) for IMRT measurements

    SciTech Connect

    Chen Yu; Moran, Jean M.; Roberts, Donald A.; El-Mohri, Youcef; Antonuk, Larry E.; Fraass, Benedick A.

    2007-12-15

    The dosimetric performance of a direct-detection active matrix flat panel dosimeter (AMFPD) is reported for intensity modulated radiation therapy (IMRT) measurements. The AMFPD consists of a-Si:H photodiodes and thin-film transistors deposited on a glass substrate with no overlying scintillator screen or metal plate. The device is operated at 0.8 frames per second in a continuous acquisition or fluoroscopic mode. The effect of the applied bias voltage across the photodiodes on the response of the AMFPD was evaluated because this parameter affects dark signal, lag contributions, and pixel sensitivity. In addition, the AMPFD response was evaluated as a function of dose, dose rate, and energy, for static fields at 10 cm depth. In continuous acquisition mode, the AMFPD maintained a linear dose response (r{sup 2}>0.99999) up to at least 1040 cGy. In order to obtain reliable integrated dose results for IMRT fields, the effects of lag on the radiation signal were minimized by operating the system at the highest frame rate and at an appropriate reverse bias voltage. Segmental MLC and dynamic MLC IMRT fields were measured with the AMFPD, and the results were compared to film, using standard methods for reliable film dosimetry. Both AMFPD and film measurements were independently converted to dose in cGy. {gamma} and {chi} values were calculated as indices of agreement. The results from the AMFPD were in excellent agreement with those from film. When 2% of D{sub max} and 2 mm of distance to agreement were used as the criteria, 98% of the region of interest (defined as the region where dose is greater than 5% of D{sub max}) satisfied |{chi}|{<=}1 on average across the cases that were tested.

  5. Generalized DQE analysis of radiographic and dual-energy imaging using flat-panel detectors

    SciTech Connect

    Richard, S.; Siewerdsen, J.H.; Jaffray, D.A.; Moseley, D.J.; Bakhtiar, B.

    2005-05-01

    Analysis of detective quantum efficiency (DQE) is an important component of the investigation of imaging performance for flat-panel detectors (FPDs). Conventional descriptions of DQE are limited, however, in that they take no account of anatomical noise (i.e., image fluctuations caused by overlying anatomy), even though such noise can be the most significant limitation to detectability, often outweighing quantum or electronic noise. We incorporate anatomical noise in experimental and theoretical descriptions of the 'generalized DQE' by including a spatial-frequency-dependent noise-power term, S{sub B}, corresponding to background anatomical fluctuations. Cascaded systems analysis (CSA) of the generalized DQE reveals tradeoffs between anatomical noise and the factors that govern quantum noise. We extend such analysis to dual-energy (DE) imaging, in which the overlying anatomical structure is selectively removed in image reconstructions by combining projections acquired at low and high kVp. The effectiveness of DE imaging in removing anatomical noise is quantified by measurement of S{sub B} in an anthropomorphic phantom. Combining the generalized DQE with an idealized task function to yield the detectability index, we show that anatomical noise dramatically influences task-based performance, system design, and optimization. For the case of radiography, the analysis resolves a fundamental and illustrative quandary: The effect of kVp on imaging performance, which is poorly described by conventional DQE analysis but is clarified by consideration of the generalized DQE. For the case of DE imaging, extension of a generalized CSA methodology reveals a potentially powerful guide to system optimization through the optimal selection of the tissue cancellation parameter. Generalized task-based analysis for DE imaging shows an improvement in the detectability index by more than a factor of 2 compared to conventional radiography for idealized detection tasks.

  6. Influence of Flat-Panel Fluoroscopic Equipment Variables on Cardiac Radiation Doses

    SciTech Connect

    Nickoloff, Edward L. Lu Zhengfeng; Dutta, Ajoy; So, James; Balter, Stephen; Moses, Jeffrey

    2007-04-15

    Purpose. To assess the influence of physician-selectable equipment variables on the potential radiation dose reductions during cardiac catheterization examinations using modern imaging equipment. Materials. A modern bi-plane angiography unit with flat-panel image receptors was used. Patients were simulated with 15-30 cm of acrylic plastic. The variables studied were: patient thickness, fluoroscopy pulse rates, record mode frame rates, image receptor field-of-view (FoV), automatic dose control (ADC) mode, SID/SSD geometry setting, automatic collimation, automatic positioning, and others. Results. Patient radiation doses double for every additional 3.5-4.5 cm of soft tissue. The dose is directly related to the imaging frame rate; a decrease from 30 pps to 15 pps reduces the dose by about 50%. The dose is related to [(FoV){sup -N}] where 2.0 < N < 3.0. Suboptimal positioning of the patient can nearly double the dose. The ADC system provides three selections that can vary the radiation level by 50%. For pediatric studies (2-5 years old), the selection of equipment variables can result in entrance radiation doses that range between 6 and 60 cGy for diagnostic cases and between 15 and 140 cGy for interventional cases. For adult studies, the equipment variables can produce entrance radiation doses that range between 13 and 130 cGy for diagnostic cases and between 30 and 400 cGy for interventional cases. Conclusions. Overall dose reductions of 70-90% can be achieved with pediatric patients and about 90% with adult patients solely through optimal selection of equipment variables.

  7. Optimization of outdoor cultivation in flat panel airlift reactors for lipid production by Chlorella vulgaris.

    PubMed

    Münkel, Ronja; Schmid-Staiger, Ulrike; Werner, Achim; Hirth, Thomas

    2013-11-01

    Microalgae are discussed as a potential renewable feedstock for biofuel production. The production of highly concentrated algae biomass with a high fatty acid content, accompanied by high productivity with the use of natural sunlight is therefore of great interest. In the current study an outdoor pilot plant with five 30 L Flat Panel Airlift reactors (FPA) installed southwards were operated in 2011 in Stuttgart, Germany. The patented FPA reactor works on the basis of an airlift loop reactor and offers efficient intermixing for homogeneous light distribution. A lipid production process with the microalgae Chlorella vulgaris (SAG 211-12), under nitrogen and phosphorous deprivation, was established and evaluated in regard to the fatty acid content, fatty acid productivity and light yield. In the first set of experiments limitations caused by restricted CO₂ availability were excluded by enriching the media with NaOH. The higher alkalinity allows a higher CO₂ content of supplied air and leads to doubling of fatty acid productivity. The second set of experiments focused on how the ratio of light intensity to biomass concentration in the reactor impacts fatty acid content, productivity and light yield. The specific light availability was specified as mol photons on the reactor surface per gram biomass in the reactor. This is the first publication based on experimental data showing the quantitative correlation between specific light availability, fatty acid content and biomass light yield for a lipid production process under nutrient deprivation and outdoor conditions. High specific light availability leads to high fatty acid contents. Lower specific light availability increases fatty acid productivity and biomass light yield. An average fatty acid productivity of 0.39 g L⁻¹  day⁻¹ for a 12 days batch process with a final fatty acid content of 44.6% [w/w] was achieved. Light yield of 0.4 g mol photons⁻¹ was obtained for the first 6 days of

  8. Assessment of the CO2 fixation capacity of Anabaena sp. ATCC 33047 outdoor cultures in vertical flat-panel reactors.

    PubMed

    Clares, Marta E; Moreno, José; Guerrero, Miguel G; García-González, Mercedes

    2014-10-10

    The extent of biological CO2 fixation was evaluated for outdoor cultures of the cyanobacterium Anabaena sp. ATCC 33047. Culture conditions were optimized indoors in bubble-column photochemostats operating in continuous mode, subjected to irradiance cycles mimicking the light regime outdoors. Highest values achieved for CO2 fixation rate and biomass productivity were 1 and 0.6 g L(-1) day(-1), respectively. The comparison among different reactors operating simultaneously - open pond, horizontal tubular reactor and vertical flat-panel - allowed to assess their relative efficiency for the outdoor development of Anabaena cultures. Despite the higher volumetric CO2 fixation capacity (and biomass productivity) exhibited by the tubular photobioreactor, yield of the flat-panel reactor was 50% higher than that of the tubular option on a per area basis, reaching values over 35 g CO2 fixed m(-2) d(-1). The flat-panel reactor actually represents a most suitable system for CO2 capture coupled to the generation of valuable biomass by Anabaena cultures.

  9. Assessment of the CO2 fixation capacity of Anabaena sp. ATCC 33047 outdoor cultures in vertical flat-panel reactors.

    PubMed

    Clares, Marta E; Moreno, José; Guerrero, Miguel G; García-González, Mercedes

    2014-10-10

    The extent of biological CO2 fixation was evaluated for outdoor cultures of the cyanobacterium Anabaena sp. ATCC 33047. Culture conditions were optimized indoors in bubble-column photochemostats operating in continuous mode, subjected to irradiance cycles mimicking the light regime outdoors. Highest values achieved for CO2 fixation rate and biomass productivity were 1 and 0.6 g L(-1) day(-1), respectively. The comparison among different reactors operating simultaneously - open pond, horizontal tubular reactor and vertical flat-panel - allowed to assess their relative efficiency for the outdoor development of Anabaena cultures. Despite the higher volumetric CO2 fixation capacity (and biomass productivity) exhibited by the tubular photobioreactor, yield of the flat-panel reactor was 50% higher than that of the tubular option on a per area basis, reaching values over 35 g CO2 fixed m(-2) d(-1). The flat-panel reactor actually represents a most suitable system for CO2 capture coupled to the generation of valuable biomass by Anabaena cultures. PMID:25068618

  10. Identification of infrared absorption peaks of amorphous silicon-carbon alloy by thermal annealing

    NASA Astrophysics Data System (ADS)

    Lin, Wei-Liang; Tsai, Hsiung-Kuang; Lee, Si-Chen; Sah, Wen-Jyh; Tzeng, Wen-Jer

    1987-12-01

    Amorphous silicon-carbon hydrogen alloy was prepared by radio frequency glow discharge decomposition of a silane-methane mixture. The infrared absorption spectra were measured at various stages of thermal annealing. By observing the change of relative intensities between these peaks the hydrogen bonding responsible for the absorption peaks could be assigned more accurately, for example, the stretching mode of monohydride Si-H is determined by its local environment, which supports H. Wagner's and W. Beyer's results [Solid State Commun. 48, 585 (1983)] but is inconsistent with the commonly believed view. It is also found that a significant fraction of carbon atoms are introduced into the film in -CH3 configuration which forms a local void and enhances the formation of polysilane chain and dangling bond defects. Only after high-temperature annealing are the hydrogen atoms driven out, and Si and C start to form a better silicon carbide network.

  11. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications.

    PubMed

    García, Héctor; Castán, Helena; Dueñas, Salvador; Bailón, Luis; García-Hernansanz, Rodrigo; Olea, Javier; Del Prado, Álvaro; Mártil, Ignacio

    2016-12-01

    A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice. PMID:27423876

  12. Study of the amorphization of surface silicon layers implanted by low-energy helium ions

    NASA Astrophysics Data System (ADS)

    Lomov, A. A.; Myakon'kikh, A. V.; Oreshko, A. P.; Shemukhin, A. A.

    2016-03-01

    The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2-5)-keV helium ions to a dose of D = 6 × 1015-5 × 1017 cm-2 have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ( z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 1016 cm-2 leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

  13. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    García, Héctor; Castán, Helena; Dueñas, Salvador; Bailón, Luis; García-Hernansanz, Rodrigo; Olea, Javier; del Prado, Álvaro; Mártil, Ignacio

    2016-07-01

    A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice.

  14. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    NASA Astrophysics Data System (ADS)

    Mutch, Michael J.; Lenahan, Patrick M.; King, Sean W.

    2016-08-01

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  15. Direct laser writing of amorphous silicon on Si-substrate induced by high repetition femtosecond pulses

    NASA Astrophysics Data System (ADS)

    Kiani, Amirkianoosh; Venkatakrishnan, Krishnan; Tan, Bo

    2010-10-01

    This research aimed to study the effects of laser parameters on direct silicon amorphorization. It was found that higher repetition rate of laser pulses gives smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model is developed for the calculation of the average surface temperature after n-pulses; it was found that for a constant power and a constant repetition rate, an increase in the pulse number does not correspond to a significant increase in the surface temperature. Moreover, at the controlled laser power level, the surface temperature will not exceed the melting point of silicon. Therefore, thermal induced damage is not observed during the amorphization.

  16. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    SciTech Connect

    Wan, Yimao; Thomson, Andrew F.; Cuevas, Andres; McIntosh, Keith R.

    2015-01-26

    Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

  17. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  18. Enhanced amorphous silicon technology for 320 x 240 microbolometer arrays with a pitch of 35 μm

    NASA Astrophysics Data System (ADS)

    Mottin, Eric; Martin, Jean-Luc; Ouvrier-Buffet, Jean-Louis; Vilain, Michel; Bain, Astrid; Yon, Jean-Jacques; Tissot, Jean-Luc; Chatard, Jean-Pierre

    2001-10-01

    LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development for years. This technology is now in production at Sofradir and first delivery have already been done to customers. From our background in modeling and material mastering LETI/LIR concentrate now on performance enhancement. This is a key point for cost reduction due to the fact that signal to noise ratio enhancement will allow us to decrease the pitch. A new approach of packaging is also described in this paper and first results are displayed. A new technological stack of amorphous silicon fully compatible with industrial process is presented. Electro-optical results obtained from an IRCMOS 320 X 240 with 35 μm pitch are presented. NETD close to 35 mK has been obtained with our new embodiment of amorphous silicon microbolometer technology.

  19. Performance and Modeling of Amorphous Silicon Photovoltaics for Building-Integrated Applications (Preprint prepared for Solar 99)

    SciTech Connect

    Kroposki, B.; Hansen, R.

    1998-06-07

    Amorphous silicon photovoltaic (PV) modules offer several advantages for building-integrated applications. The material can be deposited on glass or flexible substrates, which allows for products like roofing shingles and integrated PV/building glass. The material also has a uniform surface, which is ideal for many architectural applications. Amorphous silicon modules perform well in warm weather and have a small temperature coefficient for power. Depending on the building load, this may be beneficial when compared to crystalline systems. At the National Renewable Energy Laboratory, we are monitoring the performance of a triple-junction a-Si system. The system consists of 72 roofing shingles mounted directly to simulated roofing structures. This paper examines the performance of the building-integrated amorphous silicon PV system and applicability for covering residential loads. A simple model of system performance is also developed and is presented.

  20. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

    PubMed Central

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-01-01

    Microchannel plates are vacuum-based electron multipliers for particle—in particular, photon— detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80–120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200°C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process. PMID:24698955

  1. Achieving thermography with a thermal security camera using uncooled amorphous silicon microbolometer image sensors

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Wei; Tesdahl, Curtis; Owens, Jim; Dorn, David

    2012-06-01

    Advancements in uncooled microbolometer technology over the last several years have opened up many commercial applications which had been previously cost prohibitive. Thermal technology is no longer limited to the military and government market segments. One type of thermal sensor with low NETD which is available in the commercial market segment is the uncooled amorphous silicon (α-Si) microbolometer image sensor. Typical thermal security cameras focus on providing the best image quality by auto tonemaping (contrast enhancing) the image, which provides the best contrast depending on the temperature range of the scene. While this may provide enough information to detect objects and activities, there are further benefits of being able to estimate the actual object temperatures in a scene. This thermographic ability can provide functionality beyond typical security cameras by being able to monitor processes. Example applications of thermography[2] with thermal camera include: monitoring electrical circuits, industrial machinery, building thermal leaks, oil/gas pipelines, power substations, etc...[3][5] This paper discusses the methodology of estimating object temperatures by characterizing/calibrating different components inside a thermal camera utilizing an uncooled amorphous silicon microbolometer image sensor. Plots of system performance across camera operating temperatures will be shown.

  2. Label-free photonic biosensors fabricated with low-loss hydrogenated amorphous silicon resonators

    NASA Astrophysics Data System (ADS)

    Lipka, Timo; Wahn, Lennart; Trieu, Hoc Khiem; Hilterhaus, Lutz; Müller, Jörg

    2013-01-01

    The precise detection of chemicals and biomolecules is of great interest in the areas of biotechnology and medical diagnostics. Thus, there is a need for highly sensitive, small area, and low-cost sensors. We fabricated and optically characterized hydrogenated amorphous silicon photonic resonators for label-free lab-on-chip biosensors. The sensing was performed with small-footprint microdisk and microring resonators that detect a refractive-index change via the evanescent electric field. Homogeneous sensing with NaCl and surface-sensing experiments with immobilized bovine serum albumin (BSA) were carried out. A sensitivity as high as 460 nm/RIU was measured for NaCl dissolved in deionized water for the disk, whereas about 50 nm/RIU was determined for the ring resonator. The intrinsic limits of detection were calculated to be 3.3×10 and 3.2×10 at 1550-nm wavelength. We measured the binding of BSA to functionalized ring resonators and found that molecular masses can be detected down to the clinically relevant femtogram regime. The detection and quantification of related analytes with hydrogenated amorphous silicon photonic sensors can be used in medical healthcare diagnostics like point-of-care-testing and biotechnological screening.

  3. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  4. Properties of amorphous carbon-silicon alloys deposited by a high plasma density source

    NASA Astrophysics Data System (ADS)

    Racine, B.; Ferrari, A. C.; Morrison, N. A.; Hutchings, I.; Milne, W. I.; Robertson, J.

    2001-11-01

    The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen, and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on hydrogenated amorphous carbon-silicon alloys (a-C1-xSix:H) deposited by rf plasma enhanced chemical vapor deposition. This method gives alloys with sizeable hydrogen content and only moderate hardness. Here we use a high plasma density source known as the electron cyclotron wave resonance source to prepare films with higher sp3 content and lower hydrogen content. The composition and bonding in the alloys is determined by x-ray photoelectron spectroscopy, Rutherford backscattering, elastic recoil detection analysis, visible and ultraviolet (UV) Raman spectroscopy, infrared spectroscopy, and x-ray reflectivity. We find that it is possible to produce relatively hard, low stress, low friction, almost humidity insensitive a-C1-xSix:H alloys with a good optical transparency and a band gap well over 2.5 eV. The friction behavior and friction mechanism of these alloys are studied and compared with that of a-C:H, ta-C:H, and ta-C. We show how UV Raman spectroscopy allows the direct detection of Si-C, Si-Hx, and C-Hx vibrations, not seen in visible Raman spectra.

  5. Comparative Study of Low-temperature PECVD of Amorphous Silicon using Mono-, Di-, Trisilane and Cyclohexasilane

    SciTech Connect

    Konstantin Pokhodnya; Joseph Sandstrom; Xuliang Dai; Philip Boudjouk; Douglas L. Schulz

    2009-06-08

    The hydrogenated amorphous silicon a-Si:H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using liquid cyclohexasilane Si{sub 6}H{sub 12} (CHS). The growth rate of a-Si:H was studied as a function of substrate temperatures in the range of 30 C < T < 450 C using deposition conditions that were optimized for monosilane SiH{sub 4}. The same parameters were used for a-Si:H films grown using disilane (Si{sub 2}H{sub 6}) and trisilane (Si{sub 3}H{sub 8}) precursors. It was found that the a-Si:H film growth rate for CHS is lower with respect to those for mono-, di- and trisilane in an Ar plasma. Addition of {approx}10% of H{sub 2} dramatically increases the deposition rate for CHS-based films to {_}nm/min - a 700% increase. The as-deposited films were characterized by FTIR and Raman spectroscopy to probe the hydrogen content and local bonding environment. It was found that the films grown using Ar/H{sub 2} mixtures as carrier gas have a reduced hydrogen content relative to polysilane fragments indicating higher quality amorphous silicon.

  6. Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires

    PubMed Central

    2011-01-01

    Large amounts of amorphous silicon oxynitride nanowires have been synthesized on silicon wafer through carbon-assisted vapor-solid growth avoiding the contamination from metallic catalysts. These nanowires have the length of up to 100 μm, with a diameter ranging from 50 to 150 nm. Around 3-nm-sized nanostructures are observed to be homogeneously distributed within a nanowire cross-section matrix. The unique configuration might determine the growth of ternary amorphous structure and its special splitting behavior. Optical properties of the nanowires have also been investigated. The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance. These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle. Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively. PMID:21787429

  7. Solid state photochemistry. Subpanel A-2(b): Metastability in hydrogenated amorphous silicon

    SciTech Connect

    Carlson, D.

    1996-09-01

    All device quality amorphous silicon based materials exhibit degradation in electronic properties when exposed to sunlight. The photo-induced defects are associated with Si dangling bonds that are created by the recombination and/or trapping of photogenerated carriers. The defects are metastable and can be annealed out at temperatures of about 150 to 200 degrees Centigrade. The density of metastable defects is larger in films that are contaminated with > 10{sup 19} per cubic cm of impurities such as oxygen, carbon and nitrogen. However, recent experimental results indicate that some metastable defects are still present in films with very low impurity concentrations. The photo-induced defects typically saturate after 100 to 1000 hours of exposure to one sun illumination depending on the deposition conditions. There is also experimental evidence that photo-induced structural changes are occurring in the amorphous silicon based materials and that hydrogen may be playing an important role in both the photo-induced structural changes and in the creation of metastable defects.

  8. Heterogeneous immunoassays in microfluidic format using fluorescence detection with integrated amorphous silicon photodiodes

    PubMed Central

    Pereira, A. T.; Novo, P.; Prazeres, D. M. F.; Chu, V.; Conde, J. P.

    2011-01-01

    Miniaturization of immunoassays through microfluidic technology has the potential to decrease the time and the quantity of reactants required for analysis, together with the potential of achieving multiplexing and portability. A lab-on-chip system incorporating a thin-film amorphous silicon (a-Si:H) photodiode microfabricated on a glass substrate with a thin-film amorphous silicon-carbon alloy directly deposited above the photodiode and acting as a fluorescence filter is integrated with a polydimethylsiloxane-based microfluidic network for the direct detection of antibody-antigen molecular recognition reactions using fluorescence. The model immunoassay used consists of primary antibody adsorption to the microchannel walls followed by its recognition by a secondary antibody labeled with a fluorescent quantum-dot tag. The conditions for the flow-through analysis in the microfluidic format were defined and the total assay time was 30 min. Specific molecular recognition was quantitatively detected. The measurements made with the a-Si:H photodiode are consistent with that obtained with a fluorescence microscope and both show a linear dependence on the antibody concentration in the nanomolar-micromolar range. PMID:21403847

  9. Solar-to-Hydrogen Photovoltaic/Photoelectrochemical Devices Using Amorphous Silicon Carbide as the Photoelectrode

    SciTech Connect

    Hu, J.; Zhu, F.; Matulionis, I.; Kunrath, A.; Deutsch, T.; Kuritzky, L.; Miller, E.; Madan, A.

    2008-01-01

    We report the use of hydrogenated amorphous silicon carbide (a-SiC:H) prepared by plasma enhanced chemical vapor deposition (PECVD) as the photoelectrode in an integrated 'hybrid' photoelectrochemical (PEC) cell to produce hydrogen directly from water using sunlight. Results on the durability of hydrogenated amorphous silicon carbide (a-SiC:H) photoelectrodes in an electrolyte are presented. In a pH2 electrolyte, the a-SiC:H photoelectrode exhibits excellent stability for 100 hour test so far performed. A photocurrent onset shift (anodically) after a 24- or 100-hour durability test in electrolyte is observed, likely due to changes in the surface chemical structure of the a-SiC:H photoelectrode. It is also observed that a thin SiOx layer native to the air exposed surface of the a-SiC:H affects the photocurrent and the its onset shift. Finally, approaches for eliminating the external bias voltage and enhancing the solar-to-hydrogen efficiency in a PV/PEC hybrid structure to achieve {>=} 10% are presented.

  10. Silica nanoparticles on front glass for efficiency enhancement in superstrate-type amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Das, Sonali; Banerjee, Chandan; Kundu, Avra; Dey, Prasenjit; Saha, Hiranmay; Datta, Swapan K.

    2013-10-01

    Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO2: F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm-2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system.

  11. Non-negligible Contributions to Thermal Conductivity From Localized Modes in Amorphous Silicon Dioxide

    PubMed Central

    Lv, Wei; Henry, Asegun

    2016-01-01

    Thermal conductivity is important for almost all applications involving heat transfer. The theory and modeling of crystalline materials is in some sense a solved problem, where one can now calculate their thermal conductivity from first principles using expressions based on the phonon gas model (PGM). However, modeling of amorphous materials still has many open questions, because the PGM itself becomes questionable when one cannot rigorously define the phonon velocities. In this report, we used our recently developed Green-Kubo modal analysis (GKMA) method to study amorphous silicon dioxide (a-SiO2). The predicted thermal conductivities exhibit excellent agreement with experiments and anharmonic effects are included in the thermal conductivity calculation for all the modes in a-SiO2 for the first time. Previously, localized modes (locons) have been thought to have a negligible contribution to thermal conductivity, due to their highly localized nature. However, in a-SiO2 our results indicate that locons contribute more than 10% to the total thermal conductivity from 400 K to 800 K and they are largely responsible for the increase in thermal conductivity of a-SiO2 above room temperature. This is an effect that cannot be explained by previous methods and therefore offers new insight into the nature of phonon transport in amorphous/glassy materials. PMID:27767082

  12. Application of mesoporous silicon dioxide and silicate in oral amorphous drug delivery systems.

    PubMed

    Qian, Ken K; Bogner, Robin H

    2012-02-01

    Aqueous solubility of an active pharmaceutical ingredient is an important consideration to ensure successful drug development. Mesoporous materials have been investigated as an amorphous drug delivery system owing to their nanosized capillaries and large surface areas. The complex interactions of crystalline compounds with mesoporous media and their implication in drug delivery are not well understood. Molecules interacting with porous media behave very differently than those in bulk phase. Their altered dynamics and thermodynamics play an important role in the properties and product performance of the amorphous system. In this review, application of mesoporous silicon dioxide and silicates in drug amorphization is the main focus. First, as background, the nature of gas-porous media interactions is summarized. The synthesis of various types of mesoporous silica, which are used by many investigators in this field, is described. Second, the behavior of molecules confined in mesopores is compared with those in bulk, crystalline phase. The molecular dynamics of compounds due to confinement, analyzed using various techniques, and their consequences in drug delivery are discussed. Finally, the preparation and performance of drug delivery systems using mesoporous silica are examined.

  13. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    NASA Technical Reports Server (NTRS)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  14. Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap

    NASA Astrophysics Data System (ADS)

    Ji, Yang; Shan, Dan; Qian, Mingqing; Xu, Jun; Li, Wei; Chen, Kunji

    2016-10-01

    High conductive phosphorus-doped nano-crystalline Si embedded in Silicon-Carbide (SiC) host matrix (nc-Si:SiC) films were obtained by thermally annealing doped amorphous Si-rich SiC materials. It was found that the room conductivity is increased significantly accompanying with the increase of doping concentrations as well as the enhanced crystallizations. The conductivity can be as high as 630 S/cm for samples with the optical band gap around 2.7 eV, while the carrier mobility is about 17.9 cm2/ V.s. Temperature-dependent conductivity and mobility measurements were performed which suggested that the carrier transport process is strongly affected by both the grain boundaries and the doping concentrations.

  15. High-energy x-ray diffraction study of pure amorphous silicon

    SciTech Connect

    Laaziri, K.; Kycia, S.; Roorda, S.; Chicoine, M.; Robertson, J.L.; Wang, J.; Moss, S.C.

    1999-11-01

    Medium and high-energy x-ray diffraction has been used to study the atomic structure of pure amorphous Si prepared by MeV Si implantation into crystalline silicon. Both as-implanted and annealed samples were studied. The inelastically scattered x rays were removed by fitting the energy spectrum for the scattered x rays. The atomic scattering factor of silicon, previously known reliably up to 20 {Angstrom}{sup {minus}1}, has been extended to 55 {Angstrom}{sup {minus}1}. The radial distribution function of amorphous Si, before and after annealing, has been determined through an unbiased Fourier transformation of the normalized scattering data. Gaussian fits to the first neighbor peak in these functions shows that scattering data out to at least 40 {Angstrom}{sup {minus}1} is required to reliably determine the radial distribution function. The first-shell coordination number increases from 3.79 to 3.88 upon thermal annealing at 600{degree}C, whereas that of crystalline Si determined from similar measurements on a Si powder analyzed using the same technique is 4.0. Amorphous Si is therefore under coordinated relative to crystalline Si. Noise in the distribution function, caused by statistical variations in the scattering data at high-momentum transfer, has been reduced without affecting the experimental resolution through filtering of the interference function after subtracting the contribution of the first-neighbor peak. The difference induced by thermal annealing in the remainder of the radial distribution functions, thus revealed, is much smaller than previously believed. {copyright} {ital 1999} {ital The American Physical Society}

  16. Impact and Penetration of Thin Aluminum 2024 Flat Panels at Oblique Angles of Incidence

    NASA Technical Reports Server (NTRS)

    Ruggeri, Charles R.; Revilock, Duane M.; Pereira, J. Michael; Emmerling, William; Queitzsch, Gilbert K., Jr.

    2015-01-01

    under more extreme conditions, using a projectile with a more complex shape and sharp contacts, impacting flat panels at oblique angles of incidence.

  17. An investigation of flat panel equipment variables on image quality with a dedicated cardiac phantom

    NASA Astrophysics Data System (ADS)

    Dragusin, O.; Bosmans, H.; Pappas, C.; Desmet, W.

    2008-09-01

    Image quality (IQ) evaluation plays a key role in the process of optimization of new x-ray systems. Ideally, this process should be supported by real clinical images, but ethical issues and differences in anatomy and pathology of patients make it impossible. Phantom studies might overcome these issues. This paper presents the IQ evaluation of 30 cineangiographic films acquired with a cardiac flat panel system. The phantom used simulates the anatomy of the heart and allows the circulation of contrast agent boluses through coronary arteries. Variables investigated with influence on IQ and radiation dose are: tube potential, detector dose, added Copper filters, dynamic density optimization (DDO) and viewing angle. The IQ evaluation consisted of scoring 4 simulated calcified lesions located on different coronary artery segments in terms of degree of visualization. Eight cardiologists rated the lesions using a five-point scale ((1) lesion not visible to (5) very good visibility). Radiation doses associated to the angiograms are expressed in terms of incident air kerma (IAK) and effective dose that has been calculated with PCXMX software (STUK, Finland) from the exposure settings assuming a standard sized patient of 70 Kg. Mean IQ scores ranged from 1.68 to 4.88. The highest IQ scores were obtained for the angiograms acquired with tube potential 80 kVp, no added Cu filters, DDO 60%, RAO and LAO views and the highest entrance detector dose that has been used in the present study, namely 0.17 μGy/im. Radiation doses (IAK ~40 mGy and effective dose of 1 mSv) were estimated for angiograms acquired at 15 frames s-1, detector field-of-view 20 cm, and a length of 5 s. The following parameters improved the IQ factor significantly: a change in tube potential from 96 to 80 kVp, detector dose from 0.10 μGy/im to 0.17 μGy/im, the absence of Copper filtration. DDO variable which is a post-processing parameter should be carefully evaluated because it alters the quality of the

  18. A forward bias method for lag correction of an a-Si flat panel detector

    SciTech Connect

    Starman, Jared; Tognina, Carlo; Partain, Larry; Fahrig, Rebecca

    2012-01-15

    Purpose: Digital a-Si flat panel (FP) x-ray detectors can exhibit detector lag, or residual signal, of several percent that can cause ghosting in projection images or severe shading artifacts, known as the radar artifact, in cone-beam computed tomography (CBCT) reconstructions. A major contributor to detector lag is believed to be defect states, or traps, in the a-Si layer of the FP. Software methods to characterize and correct for the detector lag exist, but they may make assumptions such as system linearity and time invariance, which may not be true. The purpose of this work is to investigate a new hardware based method to reduce lag in an a-Si FP and to evaluate its effectiveness at removing shading artifacts in CBCT reconstructions. The feasibility of a novel, partially hardware based solution is also examined. Methods: The proposed hardware solution for lag reduction requires only a minor change to the FP. For pulsed irradiation, the proposed method inserts a new operation step between the readout and data collection stages. During this new stage the photodiode is operated in a forward bias mode, which fills the defect states with charge. A Varian 4030CB panel was modified to allow for operation in the forward bias mode. The contrast of residual lag ghosts was measured for lag frames 2 and 100 after irradiation ceased for standard and forward bias modes. Detector step response, lag, SNR, modulation transfer function (MTF), and detective quantum efficiency (DQE) measurements were made with standard and forward bias firmware. CBCT data of pelvic and head phantoms were also collected. Results: Overall, the 2nd and 100th detector lag frame residual signals were reduced 70%-88% using the new method. SNR, MTF, and DQE measurements show a small decrease in collected signal and a small increase in noise. The forward bias hardware successfully reduced the radar artifact in the CBCT reconstruction of the pelvic and head phantoms by 48%-81%. Conclusions: Overall, the

  19. Measurement of joint kinematics using a conventional clinical single-perspective flat-panel radiography system

    SciTech Connect

    Seslija, Petar; Teeter, Matthew G.; Yuan Xunhua; Naudie, Douglas D. R.; Bourne, Robert B.; MacDonald, Steven J.; Peters, Terry M.; Holdsworth, David W.

    2012-10-15

    Purpose: The ability to accurately measure joint kinematics is an important tool in studying both normal joint function and pathologies associated with injury and disease. The purpose of this study is to evaluate the efficacy, accuracy, precision, and clinical safety of measuring 3D joint motion using a conventional flat-panel radiography system prior to its application in an in vivo study. Methods: An automated, image-based tracking algorithm was implemented to measure the three-dimensional pose of a sparse object from a two-dimensional radiographic projection. The algorithm was tested to determine its efficiency and failure rate, defined as the number of image frames where automated tracking failed, or required user intervention. The accuracy and precision of measuring three-dimensional motion were assessed using a robotic controlled, tibiofemoral knee phantom programmed to mimic a subject with a total knee replacement performing a stair ascent activity. Accuracy was assessed by comparing the measurements of the single-plane radiographic tracking technique to those of an optical tracking system, and quantified by the measurement discrepancy between the two systems using the Bland-Altman technique. Precision was assessed through a series of repeated measurements of the tibiofemoral kinematics, and was quantified using the across-trial deviations of the repeated kinematic measurements. The safety of the imaging procedure was assessed by measuring the effective dose of ionizing radiation associated with the x-ray exposures, and analyzing its relative risk to a human subject. Results: The automated tracking algorithm displayed a failure rate of 2% and achieved an average computational throughput of 8 image frames/s. Mean differences between the radiographic and optical measurements for translations and rotations were less than 0.08 mm and 0.07 Degree-Sign in-plane, and 0.24 mm and 0.6 Degree-Sign out-of-plane. The repeatability of kinematics measurements performed

  20. Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film

    DOEpatents

    Carlson, David E.

    1980-01-01

    The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.

  1. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    NASA Astrophysics Data System (ADS)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-08-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  2. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    SciTech Connect

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-10-01

    Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

  3. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Adjallah, Yves Gbemonde

    The opto-electronic properties of amorphous/nanocrystalline hydrogenated silicon (a/nc-Si:H) mixed-phase thin films are investigated. Small crystalline silicon particles (3-5 nm diameter) synthesized in a flow-through reactor are injected into a separate capacitively-coupled plasma (CCP) chamber where mixed-phase hydrogenated amorphous silicon is grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) deposition techniques. This dual-chamber co-deposition system enables the variation of crystallite concentration incorporated into a series of a-Si:H films deposited simultaneously. The structural, optical and electronic properties of these mixed-phase materials are studied as a function of the silicon nanocrystal concentration. That is, we compare a sequence of films deposited in a single run, where the location of the substrate in the CCP chamber determines the density of embedded nanocrystals. Raman spectroscopy is used to determine the volume fraction of nanocrystals in the mixed phase thin films. At a moderate concentration of silicon crystallites, the dark conductivity and photoconductivity are consistently found to be up to several orders of magnitude higher than in mixed phase films with either low or heavy nanocrystalline inclusions. These results are interpreted in terms of a model whereby for low nanocrystal concentrations conduction is influenced by the disorder introduced into the a-Si:H film by the inclusions, while at high nanocrystal densities electronic transport is described by a heterojunction quantum dot model. The thermopower of the undoped a/nc-Si:H has a lower Seebeck coefficient, and similar temperature dependence, to that observed for undoped a-Si:H. In contrast, the addition of nanoparticles in doped a/nc-Si:H thin films leads to a negative Seebeck coefficient (consistent with n-type doping) with a positive temperature dependence, that is, the Seebeck coefficient becomes larger at higher temperatures. The temperature dependence of the

  4. Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching

    PubMed Central

    2011-01-01

    Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si:H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics. PMID:21711891

  5. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

    SciTech Connect

    Ayra, R.R.; Bennett, M.S.; Dickson, C.R.; Fieselmann, B.; Fortmann, C.; Goldstein, B.; Morris, J.; O'Dowd, J.G.; Oswald, R.S.; Wiedeman, S.; Yang, L. . Thin Film Div.)

    1989-10-01

    This document describes efforts to improve the quality of candidate photovoltaic materials used in amorphous wide- and narrow-band-gap materials, namely, a-Si{sub 1-x}C{sub x} and a-Si{sub 1-x}Ge{sub x}. Although these alloys show a decrease in mobility-lifetime product as the fraction of silicon decreases, their optical properties show marked differences. Microcrystalline p-layer films containing carbon were prepared to evaluate their importance for achieving high open-circuit voltages. Silicon-germanium cells were studied to optimize their performance in multijunction, stacked cell structures. The best cells fabricated from the silicon-germanium alloys yielded a conversion efficiency of 10.1% with a band gap of 1.55 eV. Several alloy-based stacked cells had conversion efficiencies of more than 10%: an a-SiC/a-SiGe cell yielded 10.5% and an a-SiC:H/a-Si:H structure yielded 10.2%. Stacked-junction cells showed far less susceptibility to light-induced degradation.

  6. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  7. Calibration model of a dual gain flat panel detector for 2D and 3D x-ray imaging

    SciTech Connect

    Schmidgunst, C.; Ritter, D.; Lang, E.

    2007-09-15

    The continuing research and further development in flat panel detector technology have led to its integration into more and more medical x-ray systems for two-dimensional (2D) and three-dimensional (3D) imaging, such as fixed or mobile C arms. Besides the obvious advantages of flat panel detectors, like the slim design and the resulting optimum accessibility to the patient, their success is primarily a product of the image quality that can be achieved. The benefits in the physical and performance-related features as opposed to conventional image intensifier systems (e.g., distortion-free reproduction of imaging information or almost linear signal response over a large dynamic range) can be fully exploited, however, only if the raw detector images are correctly calibrated and postprocessed. Previous procedures for processing raw data contain idealizations that, in the real world, lead to artifacts or losses in image quality. Thus, for example, temperature dependencies or changes in beam geometry, as can occur with mobile C arm systems, have not been taken into account up to this time. Additionally, adverse characteristics such as image lag or aging effects have to be compensated to attain the best possible image quality. In this article a procedure is presented that takes into account the important dependencies of the individual pixel sensitivity of flat panel detectors used in 2D or 3D imaging and simultaneously minimizes the work required for an extensive recalibration. It is suitable for conventional detectors with only one gain mode as well as for the detectors specially developed for 3D imaging with dual gain read-out technology.

  8. Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Jagannathan, Basanth

    Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron

  9. Radiation dose reduction using a CdZnTe-based computed tomography system: Comparison to flat-panel detectors

    SciTech Connect

    Le, Huy Q.; Ducote, Justin L.; Molloi, Sabee

    2010-03-15

    Purpose: Although x-ray projection mammography has been very effective in early detection of breast cancer, its utility is reduced in the detection of small lesions that are occult or in dense breasts. One drawback is that the inherent superposition of parenchymal structures makes visualization of small lesions difficult. Breast computed tomography using flat-panel detectors has been developed to address this limitation by producing three-dimensional data while at the same time providing more comfort to the patients by eliminating breast compression. Flat panels are charge integrating detectors and therefore lack energy resolution capability. Recent advances in solid state semiconductor x-ray detector materials and associated electronics allow the investigation of x-ray imaging systems that use a photon counting and energy discriminating detector, which is the subject of this article. Methods: A small field-of-view computed tomography (CT) system that uses CdZnTe (CZT) photon counting detector was compared to one that uses a flat-panel detector for different imaging tasks in breast imaging. The benefits afforded by the CZT detector in the energy weighting modes were investigated. Two types of energy weighting methods were studied: Projection based and image based. Simulation and phantom studies were performed with a 2.5 cm polymethyl methacrylate (PMMA) cylinder filled with iodine and calcium contrast objects. Simulation was also performed on a 10 cm breast specimen. Results: The contrast-to-noise ratio improvements as compared to flat-panel detectors were 1.30 and 1.28 (projection based) and 1.35 and 1.25 (image based) for iodine over PMMA and hydroxylapatite over PMMA, respectively. Corresponding simulation values were 1.81 and 1.48 (projection based) and 1.85 and 1.48 (image based). Dose reductions using the CZT detector were 52.05% and 49.45% for iodine and hydroxyapatite imaging, respectively. Image-based weighting was also found to have the least beam

  10. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    NASA Astrophysics Data System (ADS)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  11. Cone-beam CT breast imaging with a flat panel detector: a simulation study

    NASA Astrophysics Data System (ADS)

    Chen, Lingyun; Shaw, Chris C.; Tu, Shu-Ju; Altunbas, Mustafa C.; Wang, Tianpeng; Lai, Chao-Jen; Liu, Xinming; Kappadath, S. C.

    2005-04-01

    This paper investigates the feasibility of using a flat panel based cone-beam computer tomography (CT) system for 3-D breast imaging with computer simulation and imaging experiments. In our simulation study, 3-D phantoms were analytically modeled to simulate a breast loosely compressed into cylindrical shape with embedded soft tissue masses and calcifications. Attenuation coefficients were estimated to represent various types of breast tissue, soft tissue masses and calcifications to generate realistic image signal and contrast. Projection images were computed to incorporate x-ray attenuation, geometric magnification, x-ray detection, detector blurring, image pixelization and digitization. Based on the two-views mammography comparable dose level on the central axis of the phantom (also the rotation axis), x-ray kVp/filtration, transmittance through the phantom, detected quantum efficiency (DQE), exposure level, and imaging geometry, the photon fluence was estimated and used to estimate the phantom noise level on a pixel-by-pixel basis. This estimated noise level was then used with the random number generator to produce and add a fluctuation component to the noiseless transmitted image signal. The noise carrying projection images were then convolved with a Gaussian-like kernel, computed from measured 1-D line spread function (LSF) to simulated detector blurring. Additional 2-D Gaussian-like kernel is designed to suppress the noise fluctuation that inherently originates from projection images so that the reconstructed image detectability of low contrast masses phantom can be improved. Image reconstruction was performed using the Feldkamp algorithm. All simulations were performed on a 24 PC (2.4 GHz Dual-Xeon CPU) cluster with MPI parallel programming. With 600 mrads mean glandular dose (MGD) at the phantom center, soft tissue masses as small as 1 mm in diameter can be detected in a 10 cm diameter 50% glandular 50% adipose or fatter breast tissue, and 2 mm or larger

  12. Analytical energy-barrier-dependent Voc model for amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Castro-Carranza, A.; Nolasco, J. C.; Reininghaus, N.; Geißendörfer, S.; Vehse, M.; Parisi, J.; Gutowski, J.; Voss, T.

    2016-07-01

    We show that the open circuit voltage (Voc) in hydrogenated amorphous silicon (a-Si:H) solar cells can be described by an analytical energy-barrier-dependent equation, considering thermionic emission as the physical mechanism determining the recombination current. For this purpose, the current-voltage characteristics of two device structures, i.e., a-Si:H(n)/a-Si:H(i)/a-Si:H(p)/AZO p-i-n solar cells with different p-doping concentrations and a-Si:H(n)/a-Si:H(i)/AZO Schottky structures with different intrinsic layer thicknesses, were analyzed in dark and under illumination, respectively. The calculated barrier in the p-i-n devices is consistent with the difference between the work function of the p-layer and the conduction band edge of the i-layer at the interface in thermal equilibrium.

  13. Mapping between atomistic simulations and Eshelby inclusions in the shear deformation of an amorphous silicon model

    NASA Astrophysics Data System (ADS)

    Albaret, T.; Tanguy, A.; Boioli, F.; Rodney, D.

    2016-05-01

    In this paper we perform quasistatic shear simulations of model amorphous silicon bulk samples with Stillinger-Weber-type potentials. Local plastic rearrangements identified based on local energy variations are fitted through their displacement fields on collections of Eshelby spherical inclusions, allowing determination of their transformation strain tensors. The latter are then used to quantitatively reproduce atomistic stress-strain curves, in terms of both shear and pressure components. We demonstrate that our methodology is able to capture the plastic behavior predicted by different Stillinger-Weber potentials, in particular, their different shear tension coupling. These calculations justify the decomposition of plasticity into shear transformations used so far in mesoscale models and provide atomic-scale parameters that can be used to limit the empiricism needed in such models up to now.

  14. Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source

    SciTech Connect

    Woerdenweber, Jan; Merdzhanova, Tsvetelina; Gordijn, Aad; Stiebig, Helmut; Beyer, Wolfhard

    2010-03-08

    For hydrogenated amorphous silicon (a-Si:H) solar cells, the critical concentration of a given impurity defines the lowest concentration which causes a decay of solar cell efficiency. Values of 2-5x10{sup 19} cm{sup -3} are commonly found for the critical oxygen concentration (C{sub O}{sup crit}) of a-Si:H. Here we report a dependence of C{sub O}{sup crit} on the contamination source. For state-of-the-art a-Si:H solar cells prepared at the same plasma deposition conditions, we obtain with a (controllable) chamber wall leak C{sub O}{sup crit} approx2x10{sup 19} cm{sup -3} while for a leak in the gas supply line a higher C{sub O}{sup crit} of approx2x10{sup 20} cm{sup -3} is measured. No such dependence is observed for nitrogen.

  15. Amorphous silicon-carbon alloys deposited by electron-cyclotron resonance PECVD

    SciTech Connect

    Chu, V.; Conde, J.P.

    1996-12-31

    Hydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical-vapor deposition. Hydrogen is used as the excitation gas in the resonance chamber while silane and methane (or ethylene) are introduced in the main chamber. A minimum of 95% hydrogen dilution is used. The microwave power is kept constant at 150 W. The effect of the type of carbon source gas, silane to carbon source gas ratio, deposition pressure, substrate temperature and hydrogen dilution on the deposition rate, bandgap and Urbach energy are studied. The photoconductivity and the Urbach energy of the ECR-deposited films are compared to those prepared with glow discharge with the same bandgap.

  16. Hydrogen-induced modification of the medium-range structural order in amorphous silicon films

    SciTech Connect

    Nittala, L.N.; Jayaraman, S.; Sperling, B.A.; Abelson, J.R.

    2005-12-12

    We use fluctuation electron microscopy to determine changes in the medium-range structural order of un-hydrogenated amorphous silicon thin films after they are exposed to atomic hydrogen at a substrate temperature of 230 deg. C. The films are deposited by magnetron sputtering at either 230 or 350 deg. C substrate temperature to obtain starting states with small or large initial medium-range order, respectively. The in-diffusion of atomic hydrogen causes the medium-range order to decrease for the small initial order but to increase for the large initial order. We suggest that this behavior can be understood in terms of classical nucleation theory: The ordered regions of small diameter are energetically unstable and can lower their energy by evolving towards a continuous random network, whereas the ordered regions of large diameter are energetically stable and can lower their energy by coarsening towards the nanocrystalline state.

  17. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Theodorakos, I.; Zergioti, I.; Vamvakas, V.; Tsoukalas, D.; Raptis, Y. S.

    2014-01-01

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  18. Optical properties of protocrystalline silicon/amorphous SiC multilayer films

    NASA Astrophysics Data System (ADS)

    Fu, Guangsheng; Ma, Luo; Lu, Wanbing; Zhang, Zicai; Yu, Wei

    2008-11-01

    Protocrystalline silicon/amorphous SiC multilayer films were fabricated by helicon wave plasma enhanced chemical vapour deposition (HW-PECVD). Atom force microscopy, Raman scattering and optical absorption measurements were used to analyze the microstructure and optical properties of the multilayer films. Experiment analyses reveal that through inserting transient a-SiC layer into film depositing process, well-controlled pc-Si:H films have been obtained in the growth condition of the μc-Si:H. The optical gap is observed being tuned from 2.15 to 2.43 eV by varying single pc-Si:H layer thickness. Such multilayer structure should have potential application in constructing high efficiency and stable Si-based solar cells.

  19. Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    El-Sayed, Al-Moatasem; Watkins, Matthew B.; Grasser, Tibor; Afanas'ev, Valery V.; Shluger, Alexander L.

    2015-03-01

    Using ab initio modeling we demonstrate that H atoms can break strained Si-O bonds in continuous amorphous silicon dioxide (a -SiO2 ) networks, resulting in a new defect consisting of a threefold-coordinated Si atom with an unpaired electron facing a hydroxyl group, adding to the density of dangling bond defects, such as E' centers. The energy barriers to form this defect from interstitial H atoms range between 0.5 and 1.3 eV. This discovery of unexpected reactivity of atomic hydrogen may have significant implications for our understanding of processes in silica glass and nanoscaled silica, e.g., in porous low-permittivity insulators, and strained variants of a -SiO2 .

  20. Hydrogen reverses the clustering tendency of carbon in amorphous silicon oxycarbide

    PubMed Central

    Ding, Hepeng; Demkowicz, Michael J.

    2015-01-01

    Amorphous silicon oxycarbide (SiOC) is of great technological interest. However, its atomic-level structure is not well understood. Using density functional theory calculations, we show that the clustering tendency of C atoms in SiOC is extremely sensitive to hydrogen (H): without H, the C-C interaction is attractive, leading to enrichment of aggregated SiC4 tetrahedral units; with hydrogen, the C-C interaction is repulsive, leading to enrichment of randomly distributed SiCO3 tetrahedral units. Our results suggest that conflicting experimental characterizations of C distributions may be due to differing amounts of H present in the samples investigated. Our work also opens a path for tailoring the properties of SiOC by using the total H content to control the C distribution. PMID:26269200

  1. Sputtered amorphous silicon solar cells. Quarterly report No. 2, October 22, 1980-January 22, 1981

    SciTech Connect

    Moustakas, T.D.; Morel, D.L.; Wronski, C.R.

    1981-01-01

    The mechanism of hydrogen incorporation during the film growth was investigated through hydrogen content studies. The data are consistent with a kinetic model of hydrogen incorporation. The hole mobility-lifetime products were measured on a-SiH/sub x//metal Schottky barrier structures with a new method utilizing optical absorption, collection efficiency, and capacitance voltage measurements. The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x//Pt) were investigated as a function of hydrogen content. The data are interpreted in terms of hydrogen modification of the valence band edge and interfacial oxide effects. The fabrication by the method of sputtering of P-I-N/ITO solar cell structures is reported. (MHR)

  2. Laser annealing of amorphous/poly: Silicon solar cell material flight experiment

    NASA Technical Reports Server (NTRS)

    Cole, Eric E.

    1990-01-01

    The preliminary design proposed for the microelectronics materials processing equipment is presented. An overall mission profile, description of all processing steps, analysis methods and measurement techniques, data acquisition and storage, and a preview of the experimental hardware are included. The goal of the project is to investigate the viability of material processing of semiconductor microelectronics materials in a micro-gravity environment. The two key processes are examined: (1) Rapid Thermal Annealing (RTA) of semiconductor thin films and damaged solar cells, and (2) thin film deposition using a filament evaporator. The RTA process will be used to obtain higher quality crystalline properties from amorphous/poly-silicon films. RTA methods can also be used to repair radiation-damaged solar cells. On earth this technique is commonly used to anneal semiconductor films after ion-implantation. The damage to the crystal lattice is similar to the defects found in solar cells which have been exposed to high-energy particle bombardment.

  3. Preparation of superior lubricious amorphous carbon films co-doped by silicon and aluminum

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Yang, Jun; Zheng, Jianyun; Liang, Yongmin; Liu, Weimin

    2011-09-01

    Silicon (Si) and aluminum (Al) co-doped amorphous carbon films ((Si, Al)-C:H) were deposited on Si and stainless steel substrates by radio frequency (13.56 MHz) magnetron sputtering. The Al and Si were found to jointly regulate the hybridized carbon bonds. Mechanical properties of the films were detected by nano-indention and scratch tests. The nano-indention results revealed that all the samples exhibited good elastic recovery rate, among which the highest one was beyond 84%. Besides co-regulating the hybridizations of carbon, the co-doped Si and Al also had a common regulation on the mechanical and tribological properties. Especially, the film containing 1.6 at. % of Si and 0.9 at. % of Al showed a super-low friction (< 0.01) and a superior wear resistance in ambient air.

  4. Risk assessment of amorphous silicon dioxide nanoparticles in a glass cleaner formulation.

    PubMed

    Michel, Karin; Scheel, Julia; Karsten, Stefan; Stelter, Norbert; Wind, Thorsten

    2013-08-01

    Since nanomaterials are a heterogeneous group of substances used in various applications, risk assessment needs to be done on a case-by-case basis. Here the authors assess the risk (hazard and exposure) of a glass cleaner with synthetic amorphous silicon dioxide (SAS) nanoparticles during production and consumer use (spray application). As the colloidal material used is similar to previously investigated SAS, the hazard profile was considered to be comparable. Overall, SAS has a low toxicity. Worker exposure was analysed to be well controlled. The particle size distribution indicated that the aerosol droplets were in a size range not expected to reach the alveoli. Predictive modelling was used to approximate external exposure concentrations. Consumer and environmental exposure were estimated conservatively and were not of concern. It was concluded based on the available weight-of-evidence that the production and application of the glass cleaner is safe for humans and the environment under intended use conditions.

  5. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    NASA Astrophysics Data System (ADS)

    Wang, Jiwei; Yang, Kang; Chen, Haiyan; Deng, Changkai; Li, Dongdong; Chen, Xiaoyuan; Ren, Wei

    2016-05-01

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO2. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  6. Deposited amorphous silicon-on-insulator technology for nano-photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Kumar Selvaraja, Shankar; Schaekers, Marc; Bogaerts, Wim; Van Thourhout, Dries

    2014-02-01

    Low-loss deposited amorphous silicon (α-Si:H) layers for nano-photonic integrated circuit have been prepared using complementary-metal-oxide-semiconductor (CMOS) compatible technology. Waveguide loss as low as 3.45 dB/cm is reported for films deposited at a low temperature (300 °C) using plasma enhanced chemical vapour deposition process. The influence of the deposition parameters such as gas dilution, plasma power and pressure on the quality of the deposited material is thoroughly characterized using Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, X-ray diffraction and atomic force microscopy. We show that the optical quality of the deposited film can be directly assessed from distinct frequency bands (2090, 2000 and 840 cm-1) using FTIR, without the need for further waveguide loss measurements.

  7. 3D scanning characteristics of an amorphous silicon position sensitive detector array system.

    PubMed

    Contreras, Javier; Gomes, Luis; Filonovich, Sergej; Correia, Nuno; Fortunato, Elvira; Martins, Rodrigo; Ferreira, Isabel

    2012-02-13

    The 3D scanning electro-optical characteristics of a data acquisition prototype system integrating a 32 linear array of 1D amorphous silicon position sensitive detectors (PSD) were analyzed. The system was mounted on a platform for imaging 3D objects using the triangulation principle with a sheet-of-light laser. New obtained results reveal a minimum possible gap or simulated defect detection of approximately 350 μm. Furthermore, a first study of the angle for 3D scanning was also performed, allowing for a broad range of angles to be used in the process. The relationship between the scanning angle of the incident light onto the object and the image displacement distance on the sensor was determined for the first time in this system setup. Rendering of 3D object profiles was performed at a significantly higher number of frames than in the past and was possible for an incident light angle range of 15 ° to 85 °.

  8. High-speed light valve using an amorphous silicon photosensor and ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Takahashi, N. Shin-Ichi; Asada, Hideki; Miyahara, Masaki; Kurita, Shoichi; Kuriyama, Hiroyuki

    1987-10-01

    A novel high-speed response light valve composed of a hydrogenated amorphous silicon (a-Si:H) photosensor and a chiral smectic C phase liquid crystal is presented for the first time. This device is optically addressed. The switching between on and off states is caused by reversing the polarity of the applied voltage across the liquid crystal due to the photocurrent from the a-Si photosensor. The response time measured is about 400 microsec. The switching speed of this device is one to two orders of magnitude faster than that of the nematic liquid-crystal light valve. This device can be applied to optical bistable devices without optical feedback, using an electro-optic memory effect of the ferroelectric liquid crystal.

  9. Mapping between atomistic simulations and Eshelby inclusions in the shear deformation of an amorphous silicon model.

    PubMed

    Albaret, T; Tanguy, A; Boioli, F; Rodney, D

    2016-05-01

    In this paper we perform quasistatic shear simulations of model amorphous silicon bulk samples with Stillinger-Weber-type potentials. Local plastic rearrangements identified based on local energy variations are fitted through their displacement fields on collections of Eshelby spherical inclusions, allowing determination of their transformation strain tensors. The latter are then used to quantitatively reproduce atomistic stress-strain curves, in terms of both shear and pressure components. We demonstrate that our methodology is able to capture the plastic behavior predicted by different Stillinger-Weber potentials, in particular, their different shear tension coupling. These calculations justify the decomposition of plasticity into shear transformations used so far in mesoscale models and provide atomic-scale parameters that can be used to limit the empiricism needed in such models up to now. PMID:27300968

  10. High-Sensitivity X-ray Polarimetry with Amorphous Silicon Active-Matrix Pixel Proportional Counters

    NASA Technical Reports Server (NTRS)

    Black, J. K.; Deines-Jones, P.; Jahoda, K.; Ready, S. E.; Street, R. A.

    2003-01-01

    Photoelectric X-ray polarimeters based on pixel micropattern gas detectors (MPGDs) offer order-of-magnitude improvement in sensitivity over more traditional techniques based on X-ray scattering. This new technique places some of the most interesting astronomical observations within reach of even a small, dedicated mission. The most sensitive instrument would be a photoelectric polarimeter at the focus of 2 a very large mirror, such as the planned XEUS. Our efforts are focused on a smaller pathfinder mission, which would achieve its greatest sensitivity with large-area, low-background, collimated polarimeters. We have recently demonstrated a MPGD polarimeter using amorphous silicon thin-film transistor (TFT) readout suitable for the focal plane of an X-ray telescope. All the technologies used in the demonstration polarimeter are scalable to the areas required for a high-sensitivity collimated polarimeter. Leywords: X-ray polarimetry, particle tracking, proportional counter, GEM, pixel readout

  11. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

    PubMed

    Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

    2014-12-14

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

  12. Uncooled amorphous silicon IRFPA for high performance and high volume applications

    NASA Astrophysics Data System (ADS)

    Pochic, D.; Durand, A.; Tissot, J. L.; Crastes, A.; Vilain, M.; Legras, O.; Tinnes, S.; Minassian, C.; Robert, P.

    2009-09-01

    For more than 10 years now, uncooled sensors have given new opportunities in the IR field of applications by being able to be produce in large volume. Compared to cooled technology, uncooled detectors offer many interesting advantages: high reliability, lower cost ... whereas the performance is high enough for a lot of applications. Thermography, building inspection, enhanced driver vision and military (thermal weapon sight, low altitude UAV sensor) are applications which can be provided with affordable IR focal plane arrays... As uncooled IR sensors are mainly dedicated to these high volume applications, any uncooled IRFPA technology has to be able to provide high performance sensors but also to be producible in large volume at a minimum cost. The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon layer enables ULIS to develop a full range of IRFPA formats from 160x120 to 1024x768 pixels with 25μm and 17μm pixel-pitch, designed for high end and high volume applications. The detector ROIC designs rely on a simple architecture (detector configuration addressed by a serial link for user defined amplifier gain, windowing capability...) which enables easier systems upgrade and therefore a reduced system development non recurrent cost. The packaging technique depends on the application environment and the production volume in order to fit with the market expectation. Starting from metallic and ceramics package, very advanced new technique is under development in order to reduce uncooled IRFPA production cost. NETD in the range of 30mK (f/1, 300K, 60Hz) as well as operability higher than 99.99%, are routinely achieved with amorphous silicon technology.

  13. Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules

    SciTech Connect

    Delahoy, A.E.; Tonon, T.; Macneil, J. )

    1991-06-01

    The primary objective of this subcontract is to develop the technology for same bandgap, amorphous silicon tandem junction photovoltaic modules having an area of at least 900 cm{sup 2} with the goal of achieving an aperture area efficiency of 9%. A further objective is to demonstrate modules that retain 95% of their under standard light soaking conditions. Our approach to the attainment of these objective is based on the following distinctive technologies: (a) in-house deposition of SiO{sub 2}/SnO{sub 2}:F onto soda lime glass by APCVD to provide a textured, transparent electrode, (b) single chamber r.f. flow discharge deposition of the a-Si:H layers onto vertical substrates contained with high package density in a box carrier'' to which the discharge is confined (c) sputter deposition of highly reflecting, ZnO-based back contacts, and (d) laser scribing of the a-Si:H and electrodes with real-time scribe tracking to minimize area loss. Continued development of single junction amorphous silicon was aggressively pursued as proving ground for various optical enhancement schemes, new p-layers, and i-layers quality. We have rigorously demonstrated that the introduction of a transitional i-layer does not impair stability and that the initial gain in performance is retained. We have demonstrated a small improvement in cell stability through a post-fabrication treatment consisting of multiple, intense light flashes followed by sufficient annealing. Finally, several experiments have indicated that long term stability can be improved by overcoating the SnO{sub 2} with ZnO. 25 refs., 17 figs.

  14. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  15. [Physical mechanisms of solid-protein interactions in the interface between amorphous silicon carbide and fibrinogen].

    PubMed

    Bolz, A; Schaldach, M

    1992-11-01

    State of the art in biomaterial research and implant design is a compromise between functionality and biocompatibility. Consequently the results often have disadvantages with respect to both aspects. In regard to biocompatibility the activation of the clotting system by alloplastic materials is of great significance, because it necessitates anticoagulant therapy. Further improvements of implant technology require an understanding of the interactions between blood and implants. Therefore a microscopic model of thrombogenesis at alloplastic surfaces will shortly be presented, which relates thrombogenicity of a material to the electronic structure of its surface. The requirements for high hemocompatibility, which result from this model--especially in regard to the density of states and the conductivity at the surface--are fulfilled by an amorphous alloy of silicon and carbon (a-SiC:H). The advantage of amorphous materials is that they do not obey stoichiometric rules. Thus they allow a continuous adjustment of the electronic parameters without fundamental changes of their mechanical and chemical properties. The theoretical results where checked by total internal reflection intrinsic fluorescence spectroscopy (TIRIF) as well as thrombelastography experiments (TEG). In comparison to conventional materials like titanium or LTI carbon the TEG-clotting time of a-SiC:H-coatings is prolonged in excess of 200%. As a consequence a-SiC:H is well suited as a hemocompatible coating material for hybrid structuring of cardiovascular implants.

  16. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca i.; Kleider, Jean-Paul; Yao, Fei; Lee, Young Hee

    2016-10-01

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq-1 to 1260 Ω sq-1 for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm2 V-1 s-1 indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  17. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures.

    PubMed

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca I; Kleider, Jean-Paul; Yao, Fei; Hee Lee, Young

    2016-10-12

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n‑ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq(-1) to 1260 Ω sq(-1) for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm(2) V(-1) s(-1) indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications. PMID:27506254

  18. 3D micro- and nano-machining of hydrogenated amorphous silicon films on SiO2/Si and glass substrates

    NASA Astrophysics Data System (ADS)

    Soleimani-Amiri, S.; Zanganeh, S.; Ramzani, R.; Talei, R.; Mohajerzadeh, S.; Azimi, S.; Sanaee, Z.

    2015-07-01

    We report on the hydrogen-assisted deep reactive ion etching of hydrogenated amorphous silicon (a-Si:H) films deposited using radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). High aspect-ratio vertical and 3D amorphous silicon features, with the desired control over the shaping of the sidewalls, in micro and nano scales, were fabricated in ordered arrays. The suitable adhesion of amorphous Si film to the underlayer allows one to apply deep micro- and nano-machining to these layers. By means of a second deposition of amorphous silicon on highly curved 3D structures and subsequent etching, the fabrication of amorphous silicon rings is feasible. In addition to photolithography, nanosphere colloidal lithography and electron beam lithography were exploited to realize ultra-small features of amorphous silicon. We have also investigated the optical properties of fabricated hexagonally patterned a-Si nanowire arrays on glass substrates and demonstrated their high potential as active layers for solar cells. This etching process presents an inexpensive method for the formation of highly featured arrays of vertical and 3D amorphous silicon rods on both glass and silicon substrates, suitable for large-area applications.

  19. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Bullock, J.; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-01

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO2/a-Si:H and Al2O3/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n+) contacts, with SiO2 thicknesses of ˜1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρc of ˜3 mΩ cm2 and a recombination current density J0c of ˜40 fA/cm2. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p+) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  20. Coupled thermal/structural analyses of laser powered glass sealing methods for fiber optic and flat panel display applications

    SciTech Connect

    Chambers, R.S.; Gianoulakis, S.E.

    1996-12-31

    Glasses are used extensively by the electronics industry for packaging and in components. Because glasses have such low fracture toughness, glass components must maintain low tensile stresses to avoid cracking and ensure product stability. Modeling is a key tool for developing designs with low tensile stresses. Thermoelastic analyses are ideal for modeling slow, oven controlled processes where the temperature varies uniformly. Many processing environments, however, involve rapid heating and cooling cycles that produce nonhomogeneous temperature fields causing the volume and stresses in the glass to relax at different rates. This structural relaxation is an important nonlinear material behavior that gives rise to a point-to-point variability in effective properties of the material. To accurately model such stresses, a thermal analysis must be coupled to a structural analysis that employs a viscoelastic model of glass. Laser sealing of glasses is an example of a process where thermal history is an important factor in determining the residual stress state. Recent needs to consider laser sealing methods for fiber optic connectors and flat panel displays have spurred the development of coupled, three-dimensional thermal and structural finite element codes. Analyses of the temperatures and stresses generated in a flat panel display during a laser sealing operation are presented, an the idiosyncrasies and importance of modeling coupled thermal/structural phenomena are discussed.

  1. Use of personal digital assistants for retrieval of medical images and data on high-resolution flat panel displays.

    PubMed

    Ratib, Osman; McCoy, J Michael; McGill, D Ric; Li, Minglin; Brown, Allen

    2003-01-01

    For its new acute care hospital, the University of California at Los Angeles is evaluating innovative technology involving high-resolution flat panel display devices configured as "network appliances" that can be wall mounted for use in the retrieval and display of medical images and data. Physicians and healthcare providers can log on with wireless handheld computers, which can serve as an identification device as well as a navigational tool for selecting patient records and data. These data are displayed and manipulated on the flat panel display without the need for a keyboard or mouse. A prototype was developed with commercially available image display software, which was modified to allow the remote control of software functions from a handheld device through an infrared communication port. The system also allows navigation through the patient data in a World Wide Web-based electronic patient record. This prototype illustrates the evolution of radiologic facilities toward "shareable" high-quality display devices that allow more convenient and cost-effective access to medical images and related data in complex clinical environments, resulting in a paradigm shift in data navigation and accessibility.

  2. Nitrogen incorporated ultrananocrystalline diamond based field emitter array for a flat-panel x-ray source

    SciTech Connect

    Posada, Chrystian M.; Grant, Edwin J.; Lee, Hyoung K.; Castaño, Carlos H.; Divan, Ralu; Sumant, Anirudha V.; Rosenmann, Daniel; Stan, Liliana

    2014-04-07

    A field emission based flat-panel transmission x-ray source is being developed as an alternative for medical and industrial imaging. A field emitter array (FEA) prototype based on nitrogen incorporated ultrananocrystalline diamond film has been fabricated to be used as the electron source of this flat panel x-ray source. The FEA prototype was developed using conventional microfabrication techniques. The field emission characteristics of the FEA prototype were evaluated. Results indicated that emission current densities of the order of 6 mA/cm{sup 2} could be obtained at electric fields as low as 10 V/μm to 20 V/μm. During the prototype microfabrication process, issues such as delamination of the extraction gate and poor etching of the SiO{sub 2} insulating layer located between the emitters and the extraction layer were encountered. Consequently, alternative FEA designs were investigated. Experimental and simulation data from the first FEA prototype were compared and the results were used to evaluate the performance of alternative single and double gate designs that would yield better field emission characteristics compared to the first FEA prototype. The best simulation results are obtained for the double gate FEA design, when the diameter of the collimator gate is around 2.6 times the diameter of the extraction gate.

  3. A novel technique for ventriculoperitoneal shunting by flat panel detector CT-guided real-time fluoroscopy

    PubMed Central

    Kobayashi, Shinya; Ishikawa, Tatsuya; Mutoh, Tatsushi; Hikichi, Kentaro; Suzuki, Akifumi

    2012-01-01

    Background: Surgical placement of a ventriculoperitoneal shunt (VPS) is the main strategy to manage hydrocephalus. However, the failure rate associated with placement of ventricular catheters remains high. Methods: A hybrid operating room, equipped with a flat-panel detector digital subtraction angiography system containing C-arm cone-beam computed tomography (CB-CT) imaging, has recently been developed and utilized to assist neurosurgical procedures. We have developed a novel technique using intraoperative fluoroscopy and a C-arm CB-CT system to facilitate accurate placement of a VPS. Results: Using this novel technique, 39 consecutive ventricular catheters were placed accurately, and no ventricular catheter failures were experienced during the follow-up period. Only two patients experienced obstruction of the VPS, both of which occurred in the extracranial portion of the shunt system. Conclusion: Surgical placement of a VPS assisted by flat panel detector CT-guided real-time fluoroscopy enabled accurate placement of ventricular catheters and was associated with a decreased need for shunt revision. PMID:23226605

  4. Evaluating the impact of x-ray spectral shape on image quality in flat-panel CT breast imaging

    SciTech Connect

    Glick, Stephen J.; Thacker, Samta; Gong Xing; Liu, Bob

    2007-01-15

    In recent years, there has been an increasing interest in exploring the feasibility of dedicated computed tomography (CT) breast imaging using a flat-panel digital detector in a truncated cone-beam imaging geometry. Preliminary results are promising and it appears as if three-dimensional tomographic imaging of the breast has great potential for reducing the masking effect of superimposed parenchymal structure typically observed with conventional mammography. In this study, a mathematical framework used for determining optimal design and acquisition parameters for such a CT breast imaging system is described. The ideal observer signal-to-noise ratio (SNR) is used as a figure of merit, under the assumptions that the imaging system is linear and shift invariant. Computation of the ideal observer SNR used a parallel-cascade model to predict signal and noise propagation through the detector, as well as a realistic model of the lesion detection task in breast imaging. For all evaluations, the total mean glandular dose for a CT breast imaging study was constrained to be approximately equivalent to that of a two-view conventional mammography study. The framework presented was used to explore the effect of x-ray spectral shape across an extensive range of kVp settings, filter material types, and filter thicknesses. The results give an indication of how spectral shape can affect image quality in flat-panel CT breast imaging.

  5. An amorphous phase formation at palladium / silicon oxide (Pd/SiO{sub x}) interface through electron irradiation - electronic excitation process

    SciTech Connect

    Nagase, Takeshi; Yamashita, Ryo; Yabuuchi, Atsushi; Lee, Jung-Goo

    2015-11-15

    A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiO{sub x}) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.

  6. Optical properties of amorphous silicon thin films fabricated by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Liu, Benfeng; Zhao, Qingnan; Zheng, Pan

    2008-12-01

    Hydrogenated amorphous silicon (a-Si:H) thin films have been prepared by radio frequency magnetron sputtering. The effects of hydrogen pressure, substrate temperature and sputtering power on deposition rate of a-Si:H thin films and optical characteristics have been investigated. The films are studied by ultraviolet-visible spectrophotometer and NKD7000w thin film analysis system. The results show that the hydrogen pressure, substrate temperature and sputtering power will affect the deposition rate respectively; The refractive index, extinctive index and optical bandgap of hydrogenated silicon thin films vary regularly with the change of one of the deposition parameters. The optical bandgap, absorption coefficient and extinctive index of the films are evaluated. The absorption coefficient values range from 1.1×104cm-1 to 8.3×104cm-1 and the corresponding extinctive index vary from 0.23 to 0.35 at the wavelength of 400nm, and the optical bandgap of a-Si:H vary from 1.77 to 1.89eV.

  7. Microstructure from joint analysis of experimental data and ab initio interactions: Hydrogenated amorphous silicon

    SciTech Connect

    Biswas, Parthapratim; Drabold, D. A.; Atta-Fynn, Raymond

    2014-12-28

    A study of the formation of voids and molecular hydrogen in hydrogenated amorphous silicon is presented based upon a hybrid approach that involves inversion of experimental nuclear magnetic resonance data in conjunction with ab initio total-energy relaxations in an augmented solution space. The novelty of this approach is that the voids and molecular hydrogen appear naturally in the model networks unlike conventional approaches, where voids are created artificially by removing silicon atoms from the networks. Two representative models with 16 and 18 at. % of hydrogen are studied in this work. The result shows that the microstructure of the a-Si:H network consists of several microvoids and few molecular hydrogen for concentration above 15 at. % H. The microvoids are highly irregular in shape and size, and have a linear dimension of 5–7 Å. The internal surface of a microvoid is found to be decorated with 4–9 hydrogen atoms in the form of monohydride Si–H configurations as observed in nuclear magnetic resonance experiments. The microstructure consists of (0.9–1.4)% hydrogen molecules of total hydrogen in the networks. These observations are consistent with the outcome of infrared spectroscopy, nuclear magnetic resonance, and calorimetry experiments.

  8. Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement

    NASA Astrophysics Data System (ADS)

    Conde, J. P.; Chan, K. K.; Blum, J. M.; Arienzo, M.; Cuomo, J. J.

    1992-04-01

    High-quality, hydrogenated amorphous silicon (a-Si:H) is deposited at room temperature by rf glow discharge at a high deposition rate using a tubular reactor with cylindrical symmetry (concentric-electrode plasma-enhanced chemical vapor deposition, CE-PECVD). Using the novel CE-PECVD design, room-temperature deposition of a-Si:H with growth rates up to 14 Å s-1, low hydrogen concentration (≲10%), and the bonded hydrogen in the Si-H monohydride configuration, is achieved for the first time using an rf glow-discharge technique. The influence of the deposition parameters (silane flow rate, pressure, and power density) on the growth rate, optical band gap, and silicon-hydrogen bonding configuration, is quantitatively predicted using a deposition mechanism based on the additive contribution of three growth precursors, SiH2, SiH3, and Si2H6, with decreasing sticking coefficients of 0.7, 0.1, and 0.001, respectively. The low hydrogen concentration is due to the enhanced ion bombardment resulting from the concentric electrode design.

  9. Band engineering of amorphous silicon ruthenium thin film and its near-infrared absorption enhancement combined with nano-holes pattern on back surface of silicon substrate

    NASA Astrophysics Data System (ADS)

    Guo, Anran; Zhong, Hao; Li, Wei; Gu, Deen; Jiang, Xiangdong; Jiang, Yadong

    2016-10-01

    Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its bandgap limit. In this study, a narrow bandgap silicon rich semiconductor is achieved by introducing ruthenium (Ru) into amorphous silicon (a-Si) to form amorphous silicon ruthenium (a-Si1-xRux) thin films through co-sputtering. The increase of Ru concentration leads to an enhancement of light absorption and a narrower bandgap. Meanwhile, a specific light trapping technique is employed to realize high absorption of a-Si1-xRux thin film in a finite thickness to avoid unnecessary carrier recombination. A double-layer absorber comprising of a-Si1-xRux thin film and silicon random nano-holes layer is formed on the back surface of silicon substrates, and significantly improves near-infrared absorption while the leaky light intensity is less than 5%. This novel absorber, combining narrow bandgap thin film with light trapping structure, may have a potential application in near-infrared photoelectronic devices.

  10. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  11. Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique

    SciTech Connect

    LeBoeuf, J. L. Brodusch, N.; Gauvin, R.; Quitoriano, N. J.

    2014-12-28

    A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor–liquid–solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30% single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the (1 0 0) surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.

  12. Comparison of the imaging physics performance of a prototype flat-panel detector with a 400-speed screen-film system

    NASA Astrophysics Data System (ADS)

    Huda, Walter; Ogden, Kent M.; Roskopf, Marsha L.; Rush, Charles

    2001-06-01

    The performance of a digital radiography system that included a prototype flat panel detector (StingRay) was compared with a 400 speed screen-film system. The flat panel detector consisted of a 500 micrometers thick CsI scintillator with an image matrix size of 3k2. The limiting spatial resolution of screen-film (approximately 4 line pairs/mm) was superior to that of the flat panel detector (approximately 2.5 line pairs/mm). The digital detector had an excellent linearity response (r2 equals 0.997), a dynamic range of 20,000:1, and saturated at a radiation exposure of 60 mR.

  13. High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors

    NASA Astrophysics Data System (ADS)

    Seo, T. W.; Kim, Hyun-Suk; Lee, Kwang-Ho; Chung, Kwun-Bum; Park, Jin-Seong

    2014-09-01

    We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide ( a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm2/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm2/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.

  14. Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

    NASA Technical Reports Server (NTRS)

    Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

    2007-01-01

    Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

  15. Gain Correction for an X-ray Imaging System With a Movable Flat Panel Detector and Intrinsic Localization Crosshair.

    PubMed

    Park, Yang-Kyun; Sharp, Gregory C

    2016-04-01

    Gain calibration for X-ray imaging systems with a movable flat panel detector and an intrinsic crosshair is a challenge due to the geometry-dependent heel effect and crosshair artifact. This study aims to develop a gain correction method for such systems by implementing the Multi-Acquisition Gain Image Correction technique. Flood field images containing crosshair and heel effect were acquired in 4 different flat panel detector positions at fixed exposure parameters. The crosshair region was automatically detected using common image processing algorithms and removed by a simple interpolation procedure, resulting in a crosshair-removed image. A large kernel-based correction was then used to remove the heel effect. Mask filters corresponding to each crosshair region were applied to the resultant heel effect-removed images to invalidate the pixels of the original crosshair region. Finally, a seamless gain map was composed with corresponding valid pixels from the processed images either by the sequential replacement or by the selective averaging techniques developed in this study. Quantitative evaluation was performed based on normalized noise power spectrum and detective quantum efficiency improvement factor for the flood field images corrected by the Multi-Acquisition Gain Image Correction-based gain maps. For comparison purposes, a single crosshair-removed gain map was also tested. As a result, it was demonstrated that the Multi-Acquisition Gain Image Correction technique achieved better image quality than the crosshair-removed technique, showing lower normalized noise power spectrum values over most of spatial frequencies. The improvement was more obvious at the priori-crosshair region of the gain map. The mean detective quantum efficiency improvement factor was 1.09 ± 0.06, 2.46 ± 0.32, and 3.34 ± 0.36 in the priori-crosshair region and 2.35 ± 0.31, 2.33 ± 0.31, and 3.09 ± 0.34 in the normal region, for crosshair-removed, Multi-Acquisition Gain Image

  16. Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

    NASA Astrophysics Data System (ADS)

    Puerto, Daniel; Garcia-Lechuga, Mario; Hernandez-Rueda, Javier; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2016-07-01

    Self-assembly (SA) of molecular units to form regular, periodic extended structures is a powerful bottom-up technique for nanopatterning, inspired by nature. SA can be triggered in all classes of solid materials, for instance, by femtosecond laser pulses leading to the formation of laser-induced periodic surface structures (LIPSS) with a period slightly shorter than the laser wavelength. This approach, though, typically involves considerable material ablation, which leads to an unwanted increase of the surface roughness. We present a new strategy to fabricate high-precision nanograting structures in silicon, consisting of alternating amorphous and crystalline lines, with almost no material removal. The strategy can be applied to static irradiation experiments and can be extended into one and two dimensions by scanning the laser beam over the sample surface. We demonstrate that lines and areas with parallel nanofringe patterns can be written by an adequate choice of spot size, repetition rate and scan velocity, keeping a constant effective pulse number (N eff) per area for a given laser wavelength. A deviation from this pulse number leads either to inhomogeneous or ablative structures. Furthermore, we demonstrate that this approach can be used with different laser systems having widely different wavelengths (1030 nm, 800 nm, 400 nm), pulse durations (370 fs, 100 fs) and repetition rates (500 kHz, 100 Hz, single pulse) and that the grating period can also be tuned by changing the angle of laser beam incidence. The grating structures can be erased by irradiation with a single nanosecond laser pulse, triggering recrystallization of the amorphous stripes. Given the large differences in electrical conductivity between the two phases, our structures could find new applications in nanoelectronics.

  17. Comparison of a-Se direct-conversion and CsI(Tl) indirect-conversion flat-panel digital detectors: a clinical assessment of image quality for general radiography applications

    NASA Astrophysics Data System (ADS)

    Barski, Lori L.; Wang, Xiaohui; Wandtke, John; Waldman, David; Davis, Delphine; Foos, David H.; Dupin, Michael; Huang, Weidong; Yorkston, John

    2006-03-01

    An observer study was conducted to compare the diagnostic quality of human-subject images obtained using a-Se (amorphous selenium) and CsI(Tl) (thalium-doped cesium iodide) flat-panel detectors. Each detector was attached to an X-ray source and gantry equipment of similar configuration and was installed in a university hospital radiology department in X-ray rooms within close proximity. One hundred image pairs that represent a stratified sampling of exam types were acquired. For a particular subject, image pairs were captured of the same body part and projection, using each of the two detectors. The images comprising a pair were captured within a few minutes of each other. Using manual exposure methods, the images were captured with technique factors that correspond to average exposure levels equivalent to approximately a 400-speed screen-film system. Raw image data from both digital radiography systems was stored to a research workstation. To achieve images having the same appearance, the same image-processing software was used to render the data from both systems, although different parameters were used in the frequency processing to account for the different MTF and noise properties of the CsI(Tl) and a-Se detectors. The processed images were evaluated by radiologists who used a research workstation that was equipped with a 3 MP flat-panel monitor, and software to facilitate the image comparisons. Radiologists used subjective rank-order criteria to evaluate overall diagnostic quality and preference. Radiologists' ratings indicate that both detectors produce images that have comparable satisfactory diagnostic quality for images captured using exposure technique factors that correspond to a 400-speed screen-film system, but the CsI(Tl) detector produces significantly higher preference, especially for larger and denser exam types.

  18. Improving IMRT quality control efficiency using an amorphous silicon electronic portal imager

    SciTech Connect

    Budgell, G.J.; Zhang, Q.; Trouncer, R.J.; Mackay, R.I.

    2005-11-15

    An amorphous silicon electronic portal imaging device (EPID) has been investigated to determine its usefulness and efficiency for performing linear accelerator quality control checks specific to step and shoot intensity modulated radiation therapy (IMRT). Several dosimetric parameters were measured using the EPID: dose linearity and segment to segment reproducibility of low dose segments, and delivery accuracy of fractions of monitor units. Results were compared to ion chamber measurements. Low dose beam flatness and symmetry were tested by overlaying low dose beam profiles onto the profile from a stable high-dose exposure and visually checking for differences. Beam flatness and symmetry were also calculated and plotted against dose. Start-up reproducibility was tested by overlaying profiles from twenty successive two monitor unit segments. A method for checking the MLC leaf calibration was also tested, designed to be used on a daily or weekly basis, which consisted of summing the images from a series of matched fields. Daily images were co-registered with, then subtracted from, a reference image. A threshold image showing dose differences corresponding to >0.5 mm positional errors was generated and the number of pixels with such dose differences used as numerical parameter to which a tolerance can be applied. The EPID was found to be a sensitive relative dosemeter, able to resolve dose differences of 0.01 cGy. However, at low absolute doses a reproducible dosimetric nonlinearity of up to 7% due to image lag/ghosting effects was measured. It was concluded that although the EPID is suitable to measure segment to segment reproducibility and fractional monitor unit delivery accuracy, it is still less useful than an ion chamber as a tool for dosimetric checks. The symmetry/flatness test proved to be an efficient method of checking low dose profiles, much faster than any of the alternative methods. The MLC test was found to be extremely sensitive to sudden changes in

  19. Optimizing portal dose calculation for an amorphous silicon detector using Swiss Monte Carlo Plan

    NASA Astrophysics Data System (ADS)

    Frauchiger, D.; Fix, M. K.; Frei, D.; Volken, W.; Mini, R.; Manser, P.

    2007-06-01

    Purpose: Modern treatment planning systems (TPS) are able to calculate doses within the patient for numerous delivery techniques as e. g. intensity modulated radiation therapy (IMRT). Even dose predictions to an electronic portal image device (EPID) are available in some TPS, but with limitations in accuracy. With the steadily increasing number of facilities using EPIDs for pre-treatment and treatment verification, the desire of calculating accurate EPID dose distributions is growing. A solution for this problem is the use of Monte Carlo (MC) methods. Aims of this study were firstly to implement geometries of an amorphous silicon based EPID with varying levels of geometry complexity. Secondly to analyze the differences between simulation results and measurements for each geometry. Thirdly, to compare different transport algorithms within all EPID geometries in a flexible C++ MC environment. Materials and Methods: In this work three geometry sets, representing the EPID, are implemented and investigated. To gain flexibility in the MC environment geometry and particle transport code are independent. That allows the user to select between the transport algorithms EGSnrc, VMC++ and PIN (an in-house developed transport code) while using one of the implemented geometries of the EPID. For all implemented EPID geometries dose distributions were calculated for 6 MV and 15 MV beams using different transport algorithms and are then compared with measurements. Results: A very simple geometry, consisting of a water slab, is not capable to reproduce measurements, whereas 8 material layers perform well. The more layers with different materials are used, the longer last the calculations. EGSnrc and VMC++ lead to dosimetrically equal results. Gamma analysis between calculated and measured EPID dose distributions, using a dose difference criterion of ± 3% and a distance to agreement criterion of ± 3 mm, revealed a gamma value < 1 within more than 95% of all pixels, that have a

  20. Use of an amorphous silicon electronic portal imaging device for multileaf collimator quality control and calibration.

    PubMed

    Baker, S J K; Budgell, G J; MacKay, R I

    2005-04-01

    Multileaf collimator (MLC) calibration and quality control is a time-consuming procedure typically involving the processing, scanning and analysis of films to measure leaf and collimator positions. Faster and more reliable calibration procedures are required for these tasks, especially with the introduction of intensity modulated radiotherapy which requires more frequent checking and finer positional leaf tolerances than previously. A routine quality control (QC) technique to measure MLC leaf bank gain and offset, as well as minor offsets (individual leaf position relative to a reference leaf), using an amorphous silicon electronic portal imaging device (EPID) has been developed. The technique also tests the calibration of the primary and back-up collimators. A detailed comparison between film and EPID measurements has been performed for six linear accelerators (linacs) equipped with MLC and amorphous silicon EPIDs. Measurements of field size from 4 to 24 cm with the EPID were systematically smaller than film measurements over all field sizes by 0.4 mm for leaves/back-up collimators and by 0.2 mm for conventional collimators. This effect is due to the gain calibration correction applied by the EPID, resulting in a 'flattening' of primary beam profiles. Linac dependent systematic differences of up to 0.5 mm in individual leaf/collimator positions were also found between EPID and film measurements due to the difference between the mechanical and radiation axes of rotation. When corrections for these systematic differences were applied, the residual random differences between EPID and film were 0.23 mm and 0.26 mm (1 standard deviation) for field size and individual leaf/back-up collimator position, respectively. Measured gains (over a distance of 220 mm) always agreed within 0.4 mm with a standard deviation of 0.17 mm. Minor offset measurements gave a mean agreement between EPID and film of 0.01+/-0.10 mm (1 standard deviation) after correction for the tilt of the

  1. Microcrystallinity of Undoped Amorphous Silicon Films and Its Effects on the Transfer Characteristics of Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Liang, Chia-Wen; Chiang, Wen-Chuan; Feng, Ming-Shiann

    1995-11-01

    The microcrystallinity of hydrogenated amorphous silicon films deposited by the conventional radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) method and its dependence on chamber pressure are discussed. In a wide range of pressure at which the microcrystalline film can be formed, a critical pressure (500 mT) is found. Films deposited at this critical pressure possess the highest crystalline volume fraction and the smallest grain size. An ion-bombardment-assisted model is proposed to explain the experimental results. Concerning the applications of microcrystalline films to thin-film transistors (TFTs), the subthreshold swing and the field effect mobility are studied, both of which are found to be smaller than those of the hydrogenated amorphous silicon (a-Si:H) TFTs.

  2. Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation

    NASA Astrophysics Data System (ADS)

    Jamison, Laura; Zheng, Ming-Jie; Shannon, Steve; Allen, Todd; Morgan, Dane; Szlufarska, Izabela

    2014-02-01

    The crystalline-to-amorphous transition in nanocrystalline silicon carbide (ncSiC) has been studied using 1.25 MeV electron irradiation. When compared to literature values for single crystal silicon carbide under electron irradiation, an increase in the dose to amorphization (DTA) was observed, indicative of an increase in radiation resistance. Factors that contribute to this improvement are grain refinement, grain texture, and a high density of stacking faults (SFs) in this sample of ncSiC. To test the effect of SFs on the DTA, density functional theory simulations were conducted. It was found that SFs reduced the energy barriers for both Si interstitial migration and the rate-limiting defect recovery reaction, which may explain the increased DTA.

  3. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

    SciTech Connect

    Emelyanov, A. V. Kazanskii, A. G.; Kashkarov, P. K.; Konkov, O. I.; Terukov, E. I.; Forsh, P. A.; Khenkin, M. V.; Kukin, A. V.; Beresna, M.; Kazansky, P.

    2012-06-15

    The effect of the femtosecond laser treatment of hydrogenated amorphous silicon (a-Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of a-Si:H films photoconductance increase by femtosecond pulse laser treatment.

  4. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual technical report, April 1, 1995--March 31, 1996

    SciTech Connect

    Gordon, R.G.; Sato, H.; Liang, H.; Liu, X.; Thornton, J.

    1996-08-01

    The general objective is to develop methods to deposit materials which can be used to make more efficient solar cells. The work is organized into three general tasks: Task 1. Develop improved methods for depositing and using transparent conductors of fluorine-doped zinc oxide in amorphous silicon solar cells Task 2. Deposit and evaluate titanium oxide as a reflection-enhancing diffusion barrier between amorphous silicon and an aluminum or silver back-reflector. Task 3. Deposit and evaluate electrically conductive titanium oxide as a transparent conducting layer on which more efficient and more stable superstrate cells can be deposited. About one-third of the current project resources are allocated to each of these three objectives.

  5. Integrated detection of intrinsic fluorophores in live microbial cells using an array of thin film amorphous silicon photodetectors.

    PubMed

    Jóskowiak, A; Stasio, N; Chu, V; Prazeres, D M F; Conde, J P

    2012-01-01

    Two-dimensional fluorescence spectroscopy (2D FS) provides a non-invasive means to assess cell condition without the introduction of changes to the cell environment. The method relies on the measurement of the excitation-emission fluorescence intensity matrix of key intrinsic fluorophores, like aromatic amino acids, enzyme cofactors, and vitamins. Commonly used detection systems are complex, with multiple bandpass filters, and are hard to miniaturize. Here, an amorphous silicon photodetector array system integrated with amorphous silicon-carbon alloy filters designed to detect three key fluorophores - tryptophan (Trp), reduced nicotine adenine dinucleotide (NADH) and flavin adenine dinucleotide (FAD) - is demonstrated. These intrinsic fluorophores were detected in pure solutions and also in suspended yeast cells. The array system was used to monitor changes in intrinsic fluorophore concentration when a yeast cell solution was subject to a thermal shock stress. PMID:22565094

  6. Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure.

    PubMed

    Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

    2016-06-01

    Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper "Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure" (Kichou et al., 2016) [1].

  7. High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

    PubMed

    Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

    2015-11-01

    High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. PMID:26418573

  8. Kinetic model for photoinduced and thermally induced creation and annihilation of metastable defects in hydrogenated amorphous silicon

    NASA Astrophysics Data System (ADS)

    Abdulhalim, I.

    1995-03-01

    A microscopic many-body model is proposed for the kinetics of metastable defects (MSDs) in hydrogenated amorphous silicon (a-Si:H). It is based on the existence of short-lived large energy fluctuations which induce transient traps for carriers that release their energy and enhance the creation or annihilation of MSDs. The expressions found for the photoinduced and thermally induced creation and annihilation rates' coefficients explain the dependence on the variety of parameters.

  9. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures.

  10. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. PMID:27442970

  11. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  12. Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

    DOEpatents

    Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

    1997-07-08

    High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

  13. Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

    DOEpatents

    Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

    1999-08-24

    High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

  14. Microstructures of the silicon carbide nanowires obtained by annealing the mechanically-alloyed amorphous powders

    SciTech Connect

    Zhang, Pengfei Li, Xinli

    2015-07-15

    Silicon, graphite and boron nitride powders were mechanically alloyed for 40 h in argon. The as-milled powders were annealed at 1700 °C in nitrogen for 30 min. The annealed powders are covered by a thick layer of gray–green SiC nanowires, which are 300 nm to 1000 nm in diameter and several hundred microns in length. Trace iron in the raw powders acts as a catalyst, promoting the V–L–S process. It follows that the actual substances contributing to the growth of the SiC nanowires may be silicon, graphite and the metal impurities in the raw powders. The results from HRTEM and XRD reveal that the products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. It is interestingly found that 6H–SiC coexists with 3C–SiC in one nodular nanowire. This novel structure may introduce periodic potential field along the longitudinal direction of the nanowires, and may find applications in the highly integrated optoelectronic devices. - Graphical abstract: Display Omitted - Highlights: • SiC nanowires were prepared by annealing the mechanically alloyed amorphous powders. • SiC nanowires are 300 nm to 1000 nm in diameter and several hundred microns in length. • The products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. • Trace Fe in the raw powders acts as a catalyst, promoting the V–L–S process. • 6H–SiC coexists with 3C–SiC in one nodular SiC nanowire.

  15. Performance of flat panel (AMLCD) units installed in the aft end of drug interdiction P-3s

    NASA Astrophysics Data System (ADS)

    Sola, Kenneth E.; Sankovic, Michael

    1997-07-01

    The US Navy is proactively upgrading its fleet of P-3 Maritime Patrol Aircraft to continue to meet current and near future challenges to national security. The traditional P-3 role of anti-submarine warfare, though retained, is being expanded to include anti-surface warfare, increased reconnaissance and surveillance, and other missions. As part of the overall improvement program, P-3 cockpit and tactical crewstations throughout the aircraft are being upgraded to improve crew performance. Flat panel display technology is replacing CRTs in five on-going crewstation improvements. This paper reports on one of them: the replacement of CRT displays in a prototype EO/IR crewstation with a suite of four color AMLCDs, one of which is configured with a surface acoustic wave touch overlay to serve as a programmable touch interface. This upgrade is already in service with the fleet.

  16. Application of flat panel OLED display technology for the point-of-care detection of circulating cancer biomarkers.

    PubMed

    Katchman, Benjamin A; Smith, Joseph T; Obahiagbon, Uwadiae; Kesiraju, Sailaja; Lee, Yong-Kyun; O'Brien, Barry; Kaftanoglu, Korhan; Blain Christen, Jennifer; Anderson, Karen S

    2016-07-04

    Point-of-care molecular diagnostics can provide efficient and cost-effective medical care, and they have the potential to fundamentally change our approach to global health. However, most existing approaches are not scalable to include multiple biomarkers. As a solution, we have combined commercial flat panel OLED display technology with protein microarray technology to enable high-density fluorescent, programmable, multiplexed biorecognition in a compact and disposable configuration with clinical-level sensitivity. Our approach leverages advances in commercial display technology to reduce pre-functionalized biosensor substrate costs to pennies per cm(2). Here, we demonstrate quantitative detection of IgG antibodies to multiple viral antigens in patient serum samples with detection limits for human IgG in the 10 pg/mL range. We also demonstrate multiplexed detection of antibodies to the HPV16 proteins E2, E6, and E7, which are circulating biomarkers for cervical as well as head and neck cancers.

  17. Post-buckling of geometrically imperfect shear-deformable flat panels under combined thermal and compressive edge loadings

    NASA Technical Reports Server (NTRS)

    Librescu, L.; Souza, M. A.

    1993-01-01

    The static post-buckling of simply-supported flat panels exposed to a stationary nonuniform temperature field and subjected to a system of subcritical in-plane compressive edge loads is investigated. The study is performed within a refined theory of composite laminated plates incorporating the effect of transverse shear and the geometric nonlinearities. The influence played by a number of effects, among them transverse shear deformation, initial geometric imperfections, the character of the in-plane boundary conditions and thickness ratio are studied and a series of conclusions are outlined. The influence played by the complete temperature field (i.e., the uniform through thickness and thickness-wise gradient) as compared to the one induced by only the uniform one, is discussed and the peculiarities of the resulting post-buckling behaviors are enlightened.

  18. Deposition of Amorphous Silicon and Silicon-Based Dielectrics by Remote Plasma-Enhanced Chemical Vapor Deposition: Application to the Fabrication of Tft's and Mosfet's.

    NASA Astrophysics Data System (ADS)

    Kim, Sang Soo

    1990-01-01

    This thesis discusses the deposition of device quality silicon dioxide (SiO_2), silicon nitride (Si_3N_4 ), and hydrogenated amorphous silicon (a-Si:H) by the remote plasma enhanced chemical vapor deposition (Remote PECVD) technique at low substrate temperature (100 ^circC < T _{rm s} < 450^ circC). An ultra-high-vacuum (UHV) compatible, multi-chamber integrated processing system has been built and used for this study. This system provides: (1) in -situ substrate processing; (2) surface analysis by Auger electron spectroscopy (AES) and reflected high energy electron diffraction (RHEED); and (3) thin film deposition by Remote PECVD. Six issues are addressed: (1) in-situ semiconductor surface cleaning for Si, Ge, GaAs, and CdTe; (2) substrate surface characterization by using RHEED and AES; (3) process gas-substrate interactions (subcutaneous oxidation) occurring during the thin film deposition; (4) the thin film deposition process for silicon-based dielectrics and for doped and intrinsic amorphous silicon; (5) physical properties of the thin films deposited by Remote PECVD using in-situ AES, and ex-situ infrared (ir) spectroscopy and ellipsometry; and (6) electrical performance of thin films in device structures including metal-oxide/or insulator-semiconductor (MOS or MIS) capacitors formed on silicon, and hydrogenated -amorphous silicon thin film transistors (a-Si:H TFT's). Atomically clean semiconductor surfaces are obtained by a remote hydrogen plasma treatment prior to thin film deposition. In the remote PECVD process the process gases are selectively excited, the silane reactant, the source of silicon atoms in the films is never directly plasma excited, and the substrate is also remote from the plasma discharge region. These differences between the remote PECVD process and the conventional direct PECVD process, result in improved control of the insulator stoichiometry, and a reduction in level of chemical impurities such as hydrogen. We find that the

  19. Human health and ecological toxicity potentials due to heavy metal content in waste electronic devices with flat panel displays.

    PubMed

    Lim, Seong-Rin; Schoenung, Julie M

    2010-05-15

    Display devices such as cathode-ray tube (CRT) televisions and computer monitors are known to contain toxic substances and have consequently been banned from disposal in landfills in the State of California and elsewhere. New types of flat panel display (FPD) devices, millions of which are now purchased each year, also contain toxic substances, but have not previously been systematically studied and compared to assess the potential impact that could result from their ultimate disposal. In the current work, the focus is on the evaluation of end-of-life toxicity potential from the heavy metal content in select FPD devices with the intent to inform material selection and design-for-environment (DfE) decisions. Specifically, the metals antimony, arsenic, barium, beryllium, cadmium, chromium, cobalt, copper, lead, mercury, molybdenum, nickel, selenium, silver, vanadium, and zinc in plasma TVs, LCD (liquid crystal display) TVs, LCD computer monitors and laptop computers are considered. The human health and ecotoxicity potentials are evaluated through a life cycle assessment perspective by combining data on the respective heavy metal contents, the characterization factors in the U.S. EPA Tool for the Reduction and Assessment of Chemical and other environmental Impacts (TRACI), and a pathway and impact model. Principal contributors to the toxicity potentials are lead, arsenic, copper, and mercury. Although the heavy metal content in newer flat panel display devices creates less human health toxicity potential than that in CRTs, for ecological toxicity, the new devices are worse, especially because of the mercury in LCD TVs and the copper in plasma TVs.

  20. Light-induced V{sub oc} increase and decrease in high-efficiency amorphous silicon solar cells

    SciTech Connect

    Stuckelberger, M. Riesen, Y.; Despeisse, M.; Schüttauf, J.-W.; Haug, F.-J.; Ballif, C.

    2014-09-07

    High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (V{sub oc}) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the V{sub oc} increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclude varying the effective p-layer thickness as the cause of the substrate roughness dependence. Instead, we explain the observations by an increase of the dangling-bond density in both the p-layer—causing a V{sub oc} increase—and in the intrinsic absorber layer, causing a V{sub oc} decrease. We present a mechanism for the light-induced increase and decrease, justified by the investigation of light-induced changes of the p-layer and supported by Advanced Semiconductor Analysis simulation. We conclude that a shift of the electron quasi-Fermi level towards the conduction band is the reason for the observed V{sub oc} enhancements, and poor amorphous silicon quality on rough substrates enhances this effect.