Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a ‘parent’ compound of 112-type iron pnictide superconductors

NASA Astrophysics Data System (ADS)

Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

2018-01-01

We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca0.73La0.27FeAs2 single crystal, which is regarded as a ‘parent’ compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (T s/T N) is quasi-two-dimensional (quasi-2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)  =  Δρ/ρ(0) (µ 0 Hcosθ), θ being the magnetic field angle with respect to the c axis. While such 2D scaling becomes invalid at temperatures below T s/T N, the three-dimensional (3D) scaling approach by inclusion of the anisotropy of the Fermi surface is efficient, indicating that the appearance of the 3D Fermi surface contributes to anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 p z orbital) around the Γ point in CaFeAs2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance with H//ab is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiogai, J.; Institute of Materials Research, Tohoku University, Sendai 980-8577, Miyagi; Ciorga, M., E-mail: mariusz.ciorga@ur.de

We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes.

Tunneling anisotropic magnetoresistance in complex oxide tunnel junctions

NASA Astrophysics Data System (ADS)

Martínez, Benjamín; López-Mir, Laura; Galceran, Regina; Balcells, Lluis; Pomar, Alberto; Konstantinovic, Zorica; Sandiumenge, Felip; Frontera, Carlos; Advanced Characterization of Nanostructured Materials Team

The magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/LaAlO3(LAO)/ Pt tunneling junctions have been analyzed as a function of temperature and magnetic field. The junctions exhibit magnetoresistance (MR) values of about 37%, at H = 90 kOe at low temperature. However, the temperature dependence of MR indicates a clear distinct origin than that of conventional colossal MR. In addition, tunneling anisotropic MR (TAMR) values around 4% are found at low temperature and its angular dependence reflects the expected uniaxial anisotropy. The use of TAMR response could be an alternative of much easier technological implementation than conventional MTJs since only one magnetic electrode is required, thus opening the door to the implementation of more versatile devices. However, further studies are required in order to improve the strong temperature dependence at the present stage. Finantial support from Spanish Ministry of Economy and Competitiveness through the Severo Ochoa Programme for Centres of Excellence in R&D (SEV-2015-0496), and projects MAT2012-33207 and MAT2015-71664-R is acknowledged.

Small Fermi surfaces of PtSn4 and Pt3In7

NASA Astrophysics Data System (ADS)

Yara, T.; Kakihana, M.; Nishimura, K.; Hedo, M.; Nakama, T.; Ōnuki, Y.; Harima, H.

2018-05-01

An extremely large magnetoresistance of PtSn4 has been recently observed and discussed from a viewpoint of de Haas-van Alphen (dHvA) oscillations and theoretical small Fermi surfaces. We have studied precisely the Fermi surfaces by measuring angular dependences of dHvA frequencies and have also carried out the full potential LAPW band calculation. Furthermore, small Fermi surfaces have been detected in another Pt-based compound of Pt3In7 with the cubic structure.

Magnetotransport study of Dirac fermions in YbMnBi 2 antiferromagnet

DOE PAGES

Wang, Aifeng; Zaliznyak, I.; Ren, Weijun; ...

2016-10-15

We report quantum transport and Dirac fermions in YbMnBi 2 single crystals. YbMnBi 2 is a layered material with anisotropic conductivity and magnetic order below 290 K. Magnetotransport properties, nonzero Berry phase, and small cyclotron mass indicate the presence of Dirac fermions. Lastly, angular-dependent magnetoresistance indicates a possible quasi-two-dimensional Fermi surface, whereas the deviation from the nontrivial Berry phase expected for Dirac states suggests the contribution of parabolic bands at the Fermi level or spin-orbit coupling.

Magnetoresistance in Permalloy Connected Brickwork Artificial Spin Ice

NASA Astrophysics Data System (ADS)

Park, Jungsik; Le, Brian; Chern, Gia-Wei; Watts, Justin; Leighton, Chris; Schiffer, Peter

Artificial spin ice refers to a two-dimensional array of elongated ferromagnetic elements in which frustrated lattice geometry induces novel magnetic behavior. Here we examine room-temperature magnetoresistance properties of connected permalloy (Ni81Fe19) brickwork artificial spin ice. Both the longitudinal and transverse magnetoresistance of the nanostructure demonstrate an angular sensitivity that has not been previously observed. The observed magnetoresistance behavior can be explained from micromagnetic modelling using an anisotropic magnetoresistance model (AMR). As part of this study, we find that the ground state of the connected brickwork artificial spin ice can be reproducibly created by a simple field sweep in a narrow range of angles, and manifests in the magnetotransport with a distinct signal. Supported by the US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Grant Number DE-SC0010778. Work at the University of Minnesota was supported by the NSF MRSEC under award DMR-1420013, and DMR-1507048.

Exotic quantum properties under high magnetic fields and pressure-induced superconductivity in layered ZrTe5 and pyrite PtBi2

NASA Astrophysics Data System (ADS)

Tian, Mingliang; Tian, Zhaorong; Ning, Wei; Mingliang Tian Team

Topological Dirac semimetal is a newly discovered class of materials which has attracted intense attention. This material can be viewed as a three-dimensional (3D) analog of graphene and has linear energy dispersion in bulk, leading to a range of exotic transport properties. Here we report direct quantum transport evidence of the 3D Dirac semimetal phase of semimetallic materials ZrTe5 and pyrite PtBi2 by angular-dependent magnetoresistance measurements under high magnetic fields up to 35 T, as well as the pressure-induced superconductivity. We observed very clear negative longitudinal magnetoresistance in ZrTe5 induced by chiral anomaly under the condition of the magnetic field aligned only along the current direction, and the extreme large unsaturated magnetoresistance in pyrite PtBi2 up to 11.2 million percent at T = 1.8 K and 33 T, which surpasses the previously reported Dirac materials, such as LaSb, WTe2 and NbP. Analysis of the Shubnikov de Haas oscillations suggest that both ZrTe5 and PtBi2\\ are likely a new topological semimetals.

Development of a Magneto-Resistive Angular Position Sensor for Space Mechanisms

NASA Technical Reports Server (NTRS)

Hahn, Robert; Schmidt, Tilo; Seifart, Klaus; Olberts, Bastian; Romera, Fernando

2016-01-01

Magnetic microsystems in the form of magneto-resistive (MR) sensors are firmly established in automobiles and industrial applications. They are used to measure travel, angle, electrical current, or magnetic fields. MR technology opens up new sensor possibilities in space applications and can be an enabling technology for optimal performance, high robustness and long lifetime at reasonable costs. In some science missions, the technology is already applied, however, the designs are proprietary and case specific, for instance in case of the angular sensors used for JPL/NASA's Mars rover Curiosity [1]. Since 2013 HTS GmbH and Sensitec GmbH have teamed up to develop and qualify a standardized yet flexible to use MR angular sensor for space mechanisms. Starting with a first assessment study and market survey performed under ESA contract, a very strong industry interest in novel, contactless position measurement means was found. Currently a detailed and comprehensive development program is being performed by HTS and Sensitec. The objective of this program is to advance the sensor design up to Engineering Qualification Model level and to perform qualification testing for a representative space application. The paper briefly reviews the basics of magneto-resistive effects and possible sensor applications and describes the key benefits of MR angular sensors with reference to currently operational industrial and space applications. The key applications and specification are presented and the preliminary baseline mechanical and electrical design will be discussed. An outlook on the upcoming development and test stages as well as the qualification program will be provided.

Magnetization reversal in Py/Gd heterostructures

DOE PAGES

Lapa, Pavel N.; Ding, Junjia; Pearson, John E.; ...

2017-07-13

Here, using a combination of magnetometry and magnetotransport techniques, we studied temperature and magnetic-field behavior of magnetization in Py/Gd heterostructures. It was shown quantitatively that proximity with Py enhances magnetic order of Gd. Micromagnetic simulations demonstrate that a spin-flop transition observed in a Py/Gd bilayer is due to exchange-spring rotation of magnetization in the Gd layer. Transport measurements show that the magnetoresistance of a [Py(2nm)/Gd(2nm)] 25 multilayer changes sign at the compensation temperature and below 20 K. The positive magnetoresistance above the compensation temperature can be attributed to an in-plane domain wall, which appears because of the structural inhomogeneity ofmore » the film over its thickness. By measuring the angular dependence of resistance, we are able to determine the angle between magnetizations in the multilayer and the magnetic field at different temperatures. The measurements reveal that, due to a change in the chemical thickness profile, a noncollinear magnetization configuration is only stable in magnetic fields above 10 kOe.« less

Magnetization reversal in Py/Gd heterostructures

NASA Astrophysics Data System (ADS)

Lapa, Pavel N.; Ding, Junjia; Pearson, John E.; Novosad, Valentine; Jiang, J. S.; Hoffmann, Axel

2017-07-01

Using a combination of magnetometry and magnetotransport techniques, we studied temperature and magnetic-field behavior of magnetization in Py/Gd heterostructures. It was shown quantitatively that proximity with Py enhances magnetic order of Gd. Micromagnetic simulations demonstrate that a spin-flop transition observed in a Py/Gd bilayer is due to exchange-spring rotation of magnetization in the Gd layer. Transport measurements show that the magnetoresistance of a [Py(2 nm ) /Gd (2 nm ) ] 25 multilayer changes sign at the compensation temperature and below 20 K. The positive magnetoresistance above the compensation temperature can be attributed to an in-plane domain wall, which appears because of the structural inhomogeneity of the film over its thickness. By measuring the angular dependence of resistance, we are able to determine the angle between magnetizations in the multilayer and the magnetic field at different temperatures. The measurements reveal that, due to a change in the chemical thickness profile, a noncollinear magnetization configuration is only stable in magnetic fields above 10 kOe.

Origin of the extremely large magnetoresistance in topological semimetal PtS n4

NASA Astrophysics Data System (ADS)

Luo, X.; Xiao, R. C.; Chen, F. C.; Yan, J.; Pei, Q. L.; Sun, Y.; Lu, W. J.; Tong, P.; Sheng, Z. G.; Zhu, X. B.; Song, W. H.; Sun, Y. P.

2018-05-01

PtS n4 with extremely large magnetoresistance (XMR), a fascinating topological material platform, hosts a novel topological structure and Dirac node arcs, in which the Dirac nodes form closed loops in the momentum space. Here we performed the angular dependent magnetoresistivity (AMR), Hall effect, heat capacity measurements, and first-principles calculations to study the electronic properties of topological semimetal PtS n4 . There are some interesting observations on PtS n4 . (1) In the different experimental probes, we observed the anomalies around T ˜55 K . Significant changes of the transport results and the heat capacity have been observed, indicating successive Fermi surface reconstruction induced by the temperature. It means there is Lifshitz transition (LT) induced by the temperature in PtS n4 . (2) The perfect compensation between the electron and hole has been found around T ˜30 K , where the XMR appears, which is confirmed by the Hall effect measurements and the first-principles calculations. The XMR effect in PtS n4 is suggested to originate from the combination of the electron-hole compensation and a particular orbital texture on the electron pocket. Meanwhile, we also found that LT seems to serve as a knob for the novel topological properties in two-dimensional (2D) topological semimetals (TSMs).

Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe

NASA Astrophysics Data System (ADS)

Li, X.; Zhou, Y.; Zheng, C.; Chan, P. H.; Chan, M.; Pong, Philip W. T.

2016-11-01

The spin torque diode effect in all metal spintronic devices has been proposed as a microwave detector with a high power limit and resistivity to breakdown. The previous works have revealed the field-angle dependence of the rectified DC voltage (VDC) in the ferromagnetic stripe. The giant magnetoresistive (GMR) microstripe exhibits higher sensitivity compared with the ferromagnetic stripe. However, the influence of the magnetic field direction and bias current in the spin rectification of GMR microstripe is not yet reported. In this work, the angular dependence and bias dependence of resonant frequency (fR) and VDC are investigated. A macrospin model concerning the contribution of magnetic field, shape anisotropy, and unidirectional anisotropy is engaged to interpret the experimental data. fR exhibits a |sin δH| dependence on the in-plane field angle (δH). VDC presents either |sin δH| or |sin2 δH cos δH | relation, depending on the magnitude of Hext. Optimized VDC of 24 μV is achieved under 4 mT magnetic field applied at δH = 170°. Under out-of-plane magnetic field, fR shows a cos 2θH reliance on the polar angle (θH), whereas VDC is sin θH dependent. The Oersted field of the DC bias current (IDC) modifies the effective field, resulting in shifted fR. Enhanced VDC with increasing IDC is attributed to the elevated contribution of spin-transfer torque. Maximum VDC of 35.2 μV is achieved, corresponding to 47% increase compared with the optimized value under zero bias. Higher IDC also results in enlarged damping parameter in the free layer, resulting in increased linewidth in the spin torque diode spectra. This work experimentally and analytically reveals the angular dependence of fR and VDC in the GMR microstripe. The results further demonstrate a highly tunable fR and optimized VDC by bias current without the external magnetic field. GMR microstripe holds promise for application as a high-power, frequency-tunable microwave detector that works under small or zero magnetic field.

Systematic study of doping dependence on linear magnetoresistance in p-PbTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.

2014-10-20

We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linearmore » magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.« less

Quantum oscillations and coherent interlayer transport in a new topological Dirac semimetal candidate YbMnSb2

NASA Astrophysics Data System (ADS)

Wang, Yi-Yan; Xu, Sheng; Sun, Lin-Lin; Xia, Tian-Long

2018-02-01

Dirac semimetals, which host Dirac fermions and represent a new state of quantum matter, have been studied intensively in condensed-matter physics. The exploration of new materials with topological states is important in both physics and materials science. We report the synthesis and the transport properties of high-quality single crystals of YbMnSb2. YbMnSb2 is a new compound with metallic behavior. Quantum oscillations, including Shubnikov-de Haas (SdH) oscillation and de Haas-van Alphen-type oscillation, have been observed at low temperature and high magnetic field. Small effective masses and nontrivial Berry phase are extracted from the analyses of quantum oscillations, which provide the transport evidence for the possible existence of Dirac fermions in YbMnSb2. The measurements of angular-dependent interlayer magnetoresistance indicate that the interlayer transport is coherent. The Fermi surface of YbMnSb2 possesses a quasi-two-dimensional characteristic as determined by the angular dependence of SdH oscillation frequency. These findings suggest that YbMnSb2 is a new candidate of topological Dirac semimetals.

Quantum oscillations in dual-layered quasi-two-dimensional organic metal (ET){sub 4}HgBr{sub 4}(C{sub 6}H{sub 4}Cl{sub 2})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyubovskii, R. B.; Pesotskii, S. I., E-mail: pesot@icp.ac.ru; Shilov, G. V.

2016-08-15

The behavior of de Haas–van Alfven (dHvA) and Shubnikov–de Haas (ShdH) quantum oscillations in dual-layered quasi-two-dimensional organic metal (ET){sub 4}HgBr{sub 4}(C{sub 6}H{sub 4}Cl{sub 2}) is investigated. The oscillation spectra qualitatively agree with theoretical calculations of the bandgap structure. The angular dependence of the oscillation amplitude of magnetoresistance contains “spin zeros”; the analysis of the location of these zeros allows one to evaluate the electron–phonon interaction constant: λ ≈ 0.2.

Development of Magneto-Resistive Angular Position Sensors for Space Applications

NASA Astrophysics Data System (ADS)

Hahn, Robert; Langendorf, Sven; Seifart, Klaus; Slatter, Rolf; Olberts, Bastian; Romera, Fernando

2015-09-01

Magnetic microsystems in the form of magneto- resistive (MR) sensors are firmly established in automobiles and industrial applications. They measure path, angle, electrical current, or magnetic fields. MR technology opens up new sensor possibilities in space applications and can be an enabling technology for optimal performance, high robustness and long lifetime at reasonable costs. In a recent assessment study performed by HTS GmbH and Sensitec GmbH under ESA Contract a market survey has confirmed that space industry has a very high interest in novel, contactless position sensors based on MR technology. Now, a detailed development stage is pursued, to advance the sensor design up to Engineering Qualification Model (EQM) level and to perform qualification testing for a representative pilot space application.The paper briefly reviews the basics of magneto- resistive effects and possible sensor applications and describes the key benefits of MR angular sensors with reference to currently operational industrial and space applications. The results of the assessment study are presented and potential applications and uses of contactless magneto-resistive angular sensors for spacecraft are identified. The baseline mechanical and electrical sensor design will be discussed. An outlook on the EQM development and qualification tests is provided.

Magnetoresistive detection of strongly pinned uncompensated magnetization in antiferromagnetic FeMn

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lapa, Pavel N.; Roshchin, Igor V.; Ding, Junjia

2017-01-17

Here we observed and studied pinned uncompensated magnetization in an antiferromagnet using magnetoresistance measurements. For this, we developed antiferromagnet-ferromagnet spin valves (AFSVs) that consist of an antiferromagnetic layer and a ferromagnetic one, separated by a nonmagnetic conducting spacer. In an AFSV, the uncompensated magnetization in the antiferromagnet affects scattering of spin-polarized electrons giving rise to giant magnetoresitance (GMR). By measuring angular dependence of AFSVs' resistance, we detected pinned uncompensated magnetization responsible for the exchange bias effect in an antiferromagnet- only exchange bias system Cu/FeMn/Cu. The fact that GMR measured in this system persists up to 110 kOe indicates that themore » scattering occurs on strongly pinned uncompensated magnetic moments in FeMn. This strong pinning can be explained if this pinned uncompensated magnetization is a thermodynamically stable state and coupled to the antiferromagnetic order parameter. Finally, using the AFSV technique, we confirmed that the two interfaces between FeMn and Cu are magnetically different: The uncompensated magnetization is pinned only at the interface with the bottom Cu layer.« less

Angle-Dependent Magnetoresistance in Organic Metals

NASA Astrophysics Data System (ADS)

Blundell, Stephen J.; Singleton, John

1996-12-01

Recent experimental studies of the angle-dependent magnetoresistance in various organic metals have been remarkably successful in elucidating the nature of the low-temperature ground state and providing information about the Fermi surface shape which is hard or impossible to obtain using other techniques. We review various theoretical approaches to describe angel-dependent magnetoresistance and a number of important experimental results which have been obtained.

Antiferromagnetic exchange and magnetoresistance enhancement in Co-Re superlattices

NASA Astrophysics Data System (ADS)

Freitas, P. P.; Melo, L. V.; Trindade, I.; From, M.; Ferreira, J.; Monteiro, P.

1992-02-01

Co-Re superlattices were prepared that show either antiferromagnetic or ferromagnetic coupling between the Co layers depending on the Re spacer thickness. Enhanced saturation magnetoresistance occurs for antiferromagnetically coupled layers. The saturation magnetoresistance decays exponentially with Re thickness but does not depend critically on the Co thickness.

Magnetoresistance behavior in nanobulk assembled Bi2Se3 topological insulator

NASA Astrophysics Data System (ADS)

Bera, Sumit; Behera, P.; Mishra, A. K.; Krishnan, M.; Patidar, Manju Mishra; Singh, Durgesh; Venkatesh, R.; Phase, D. M.; Ganesan, V.

2018-05-01

Temperature and magnetic field dependent magnetoresistance (MR) including structural, morphological studies of Bi2Se3 nanoflower like structure synthesized by microwave assisted solvothermal method has been investigated. Powder X-ray diffraction (XRD) has confirmed the formation of single phase. Morphology of the material shows nanoflower kind of structures with edge to edge size of around 4 µm and such occurrences are quite high. The temperature dependent resistance invokes a metallic behavior up to a certain lower temperature, below which it follows -ln(T) behavior that has been elucidated in literature using electron-electron interaction and weak anti-localization effects. High temperature magnetoresistance is consistent with parabolic field dependence indicating a classical magnetoresistance in metals as a result of Lorenz force. In low temperature regime magnetoresistance as a function of magnetic field at different temperatures obeys power law near low field which indicates a three dimensional weak-antilocalization. A linear magnetoresistance at low temperature and high magnetic field shows the domination of surface state conduction.

Magnetotransport properties of MoP 2

DOE PAGES

Wang, Aifeng; Graf, D.; Stein, Aaron; ...

2017-11-02

We report magnetotransport and de Haas–van Alphen (dHvA) effect studies on MoP 2 single crystals, predicted to be a type- II Weyl semimetal with four pairs of robust Weyl points located below the Fermi level and long Fermi arcs. The temperature dependence of resistivity shows a peak before saturation, which does not move with magnetic field. Large nonsaturating magnetoresistance (MR) was observed, and the field dependence of MR exhibits a crossover from semiclassical weak-field B 2 dependence to the high-field linear-field dependence, indicating the presence of Dirac linear energy dispersion. In addition, a systematic violation of Kohler's rule was observed,more » consistent with multiband electronic transport. Strong spin-orbit coupling splitting has an effect on dHvA measurements whereas the angular-dependent dHvA orbit frequencies agree well with the calculated Fermi surface. The cyclotron effective mass ~1.6m e indicates the bands might be trivial, possibly since the Weyl points are located below the Fermi level.« less

PREFACE: Spin Electronics

NASA Astrophysics Data System (ADS)

Dieny, B.; Sousa, R.; Prejbeanu, L.

2007-04-01

Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic tunnel junctions were introduced as memory elements in new types of non-volatile magnetic memories (MRAM). A first 4Mbit product was launched by Freescale in July 2006. Future generations of memories are being developed by academic groups or companies. the combination of magnetic elements with CMOS components opens a whole new paradigm in hybrid electronic components which can change the common conception of the architecture of complex electronic components with a much tighter integration of logic and memory. the steady magnetic excitations stimulated by spin-transfer might be used in a variety of microwave components provided the output power can be increased. Intense research and development efforts are being aimed at increasing this power by the synchronization of oscillators. The articles compiled in this special issue of Journal of Physics: Condensed Matter, devoted to spin electronics, review these recent developments. All the contributors are greatly acknowledged.

Study of magnetoresistance in the supercooled state of Dy-Y alloys

NASA Astrophysics Data System (ADS)

Jena, Rudra Prasad; Lakhani, Archana

2018-02-01

We report the magnetoresistance studies on Dy1-xYx (x ≤ 0.05) alloys across the first order helimagnetic to ferromagnetic phase transition. These alloys exhibit multiple magnetic phases on varying the temperature and magnetic field. The magnetoresistance studies in the hysteresis region shows irreversibility in forward and reverse field cycles. The resistivity values at zero field for these alloys after zero field cooling to the measurement temperatures, are different in both forward and reverse field cycles. The path dependence of magnetoresistance suggests the presence of helimagnetic phase as the supercooled metastable state which transforms to the stable ferromagnetic state on increasing the field. At high magnetic fields negative magnetoresistance following a linear dependence with field is observed which is attributed to the magnon scattering.

Magnetotransport of proton-irradiated BaFe 2As 2 and BaFe 1.985Co 0.015As 2 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moseley, D. A.; Yates, K. A.; Peng, N.

2015-02-17

In this paper, we study the magnetotransport properties of the ferropnictide crystals BaFe 2As 2 and BaFe 1.985Co 0.015As 2. These materials exhibit a high field linear magnetoresistance that has been attributed to the quantum linear magnetoresistance model. In this model, the linear magnetoresistance is dependent on the concentration of scattering centers in the material. By using proton-beam irradiation to change the defect scattering density, we find that the dependence of the magnitude of the linear magnetoresistance on scattering quite clearly contravenes this prediction. Finally, a number of other scaling trends in the magnetoresistance and high field Hall data aremore » observed and discussed.« less

Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Morgan, Caitlin; Misiorny, Maciej; Metten, Dominik; Heedt, Sebastian; Schäpers, Thomas; Schneider, Claus M.; Meyer, Carola

2016-05-01

We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of τs=1.1 ns , a value comparable with those found in silicon- or graphene-based spin-valve devices.

Large magnetoresistance in oxide based ferromagnet/superconductor spin switches.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pena, V.; Nemes, N.; Visani, C.

2006-01-01

We report large magnetoresistance (in excess of 1000%) in ferromagnet / superconductor / ferromagnet structures made of La{sub 0.7}Ca{sub 0.3}MnO{sub 3} and YBa{sub 2}Cu{sub 3}O{sub 7} in the current in plane (CIP) geometry. This magnetoresistance has many of the ingredients of the giant magnetoresistance of metallic superlattices: it is independent on the angle between current and magnetic field, depends on the relative orientation of the magnetization in the ferromagnetic layers, and takes very large values. The origin is enhanced scattering at the F/S interface in the anti parallel configuration of the magnetizations. Furthermore, we examine the dependence of the magnetoresistancemore » effect on the thickness of the superconducting layer, and show that the magnetoresistance dies out for thickness in excess of 30 nm, setting a length scale for the diffusion of spin polarized quasiparticles.« less

Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

NASA Astrophysics Data System (ADS)

Domingo, N.; Farokhipoor, S.; Santiso, J.; Noheda, B.; Catalan, G.

2017-08-01

We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO3 by means of conductive—atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

DOEpatents

Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

2001-01-01

The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

Spin-Hall magnetoresistance in multidomain helical spiral systems

NASA Astrophysics Data System (ADS)

Aqeel, A.; Mostovoy, M.; van Wees, B. J.; Palstra, T. T. M.

2017-05-01

We study the spin-Hall magnetoresistance (SMR) in multidomain helical spiral magnet Cu2OSeO{{}3}| Pt heterostructures. We compare the SMR response of Cu2OSeO3 at 5 K, when the magnetic domains are almost frozen, to that at elevated temperatures, when domain walls move easily. At 5 K the SMR amplitude vanishes at low applied magnetic fields, while at 50 K it does not. This phenomenon can be explained by the effect of the magnetic field on the domain structure of Cu2OSeO3. At elevated temperatures the system can reach the thermodynamic equilibrium state, in which a single domain that has a minimal energy for a given field direction occupies the whole sample and gives rise to a nonzero SMR signal. In contrast at 5 K, the three types of domains with mutually orthogonal spiral wave vectors have equal volumes independent of the field direction, which leads to the cancellation of the SMR signal at low fields. In the single-domain conical spiral and collinear ferrimagnetic states, the angular and field dependence of the SMR is found to be same at all temperatures (T≤slant 50 K). This behavior can be understood within the framework of the SMR theory developed for collinear magnets.

Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Han-Chun; Ye, Tianyu; Mani, R. G.

2015-02-14

Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, R{sub xx}, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ{sub 0}. Here, we suggest a microwave frequency dependence of θ{sub 0}(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.

Large magnetoresistance and sharp switching in FexTiS2

NASA Astrophysics Data System (ADS)

Choe, Jesse; Morosan, Emilia

Large magnetoresistance materials are suitable for applications in sensors, read heads, and random access memories. Most metals, though having excellent ductility which is important for manufacturing processes, have changes of magnetoresistance on the order of only 1 % . Very large magnetoresistances in Fe0.30TaS2 ( 140 %) have been attributed to misalignment of magnetic moments causing spin disorder scattering. We performed measurements of the magnetic field dependence of resistivity and magnetization of FexTiS2 single crystals (x = 0 . 1 - 0 . 5), which show both the large magnetoresistance, as well as the sharp switching in magnetization as those reported in the Ta analogue. By comparing and contrasting these two materials, we can gain deeper understanding of the underlying physics, allowing us to strategically search for materials with higher transition temperature, lower switching fields, and larger magnetoresistances. NSF DMREF 1629374.

Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures

NASA Astrophysics Data System (ADS)

Nutku, Ferhat; Donmez, Omer; Sarcan, Fahrettin; Erol, Ayşe; Puustinen, Janne; Arıkan, Mehmet Çetin; Guina, Mircea

2015-03-01

In this work, magnetoresistance of as-grown and annealed n- and p-type modulation-doped Ga0.68In0.32NyAs1-y/GaAs single quantum well structures with various nitrogen concentrations has been studied. At low temperatures and low magnetic fields, in n-type samples negative and in p-type samples positive, magnetoresistance has been observed. The observed negative magnetoresistance in n-type samples is an indication of enhanced backscattering of electrons due to the weak localization of the electrons as an effect of the N-induced defects. Nitrogen concentration and thermal annealing dependence of the magnetoresistance have been studied for both n- and p-type samples. The observed decrease in the negative magnetoresistance in n-type and enhanced positive magnetoresistance in p-type samples following thermal annealing have been explained by considering thermal annealing-induced improvement of mobility and the crystal quality in N-containing samples. After thermal annealing, the magnitude of negative magnetoresistance decreases and the breaking of the weak localization is achieved at lower magnetic fields in n-type samples. It is observed that as the mobility of the sample increases, critical magnetic field of negative to positive magnetoresistance transition becomes lower.

Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

PubMed

Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

2017-09-06

The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

Viscous magnetoresistance of correlated electron liquids

NASA Astrophysics Data System (ADS)

Levchenko, Alex; Xie, Hong-Yi; Andreev, A. V.

2017-03-01

We develop a theory of magnetoresistance of two-dimensional electron systems in a smooth disorder potential in the hydrodynamic regime. Our theory applies to two-dimensional semiconductor structures with strongly correlated carriers when the mean free path due to electron-electron collisions is sufficiently short. The dominant contribution to magnetoresistance arises from the modification of the flow pattern by the Lorentz force, rather than the magnetic field dependence of the kinetic coefficients of the electron liquid. The resulting magnetoresistance is positive and quadratic at weak fields. Although the resistivity is governed by both the viscosity and thermal conductivity of the electron fluid, the magnetoresistance is controlled by the viscosity only. This enables the extraction of viscosity of the electron liquid from magnetotransport measurements.

Temperature- and Bias-Dependence of Magnetoresistance in Doped Manganite Thin Film Trilayer Junctions

NASA Astrophysics Data System (ADS)

Sun, J. Z.; Xiao, Gang

1998-03-01

Large low-field magnetoresistance, up to a factor of five change in resistance, was observed in trilayer junctions formed by epitaxial thin films of La_0.67Sr_0.33 MnO3 - SrTiO3 - La_0.67Sr_0.33MnO3 at 4.2K and 100 Oe. Such magnetoresistance decreases with increasing sample temperature, and disappears for temperatures above 150K. The magnetoresistance also decreases upon increasing bias voltage across the junction. We present systematic experimental studies of both temperature and bias-dependence. These results in manganite trilayer junctions at low temperatures are similar to what has been observed in metallic trilayer magnetic tunneling valves, and are qualitatively consistent with the interface magnon excitation model proposed by Zhang et al.(S. Zhang, P. M. Levy, A. C. Marley and S. S. P. Parkin, Phys. Rev. Lett. 79), 3744 (1997).

Design and Fabrication of Full Wheatstone-Bridge-Based Angular GMR Sensors.

PubMed

Yan, Shaohua; Cao, Zhiqiang; Guo, Zongxia; Zheng, Zhenyi; Cao, Anni; Qi, Yue; Leng, Qunwen; Zhao, Weisheng

2018-06-05

Since the discovery of the giant magnetoresistive (GMR) effect, GMR sensors have gained much attention in last decades due to their high sensitivity, small size, and low cost. The full Wheatstone-bridge-based GMR sensor is most useful in terms of the application point of view. However, its manufacturing process is usually complex. In this paper, we present an efficient and concise approach to fabricate a full Wheatstone-bridge-based angular GMR sensor by depositing one GMR film stack, utilizing simple patterned processes, and a concise post-annealing procedure based on a special layout. The angular GMR sensor is of good linear performance and achieves a sensitivity of 0.112 mV/V/Oe at the annealing temperature of 260 °C in the magnetic field range from -50 to +50 Oe. This work provides a design and method for GMR-sensor manufacturing that is easy for implementation and suitable for mass production.

Temperature Dependent Magnetoresistance of CeCu2Si2 up to 60 T [Proposal: P14728

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stritzinger, Laurel Elaine Winter; Lai, Y.; Mcdonald, Ross David

2017-03-23

We recently investigated the chemical substitution series CeCu2Si2-xPx, for x = 0, 0.01, and 0.14, using a contactless tunnel diode oscillator technique. These measurements revealed previously unreported Shubnikov-de Haas oscillations above 45 T with an unusual temperature dependence that could potentially be explained by a high magnetic field transition. To investigate this possible transition, magnetoresistance measurements were desired. However, initial magnetoresistance measurements on CeCu2Si2 showed poor signal-to-noise due to the small value of the sample's resistivity. To overcome this obstacle, we performed micro-structuring of a single crystal specimen to increase the sample's resistance.

Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi{sub 2}Te{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dey, Rik, E-mail: rikdey@utexas.edu; Pramanik, Tanmoy; Roy, Anupam

We have studied angle dependent magnetoresistance of Bi{sub 2}Te{sub 3} thin film with field up to 9 T over 2–20 K temperatures. The perpendicular field magnetoresistance has been explained by the Hikami-Larkin-Nagaoka theory alone in a system with strong spin-orbit coupling, from which we have estimated the mean free path, the phase coherence length, and the spin-orbit relaxation time. We have obtained the out-of-plane spin-orbit relaxation time to be small and the in-plane spin-orbit relaxation time to be comparable to the momentum relaxation time. The estimation of these charge and spin transport parameters are useful for spintronics applications. For parallel field magnetoresistance,more » we have confirmed the presence of Zeeman effect which is otherwise suppressed in perpendicular field magnetoresistance due to strong spin-orbit coupling. The parallel field data have been explained using both the contributions from the Maekawa-Fukuyama localization theory for non-interacting electrons and Lee-Ramakrishnan theory of electron-electron interactions. The estimated Zeeman g-factor and the strength of Coulomb screening parameter agree well with the theory. Finally, the anisotropy in magnetoresistance with respect to angle has been described by the Hikami-Larkin-Nagaoka theory. This anisotropy can be used in anisotropic magnetic sensor applications.« less

Anomalous Hall effect in ZrTe 5

DOE PAGES

Liang, Tian; Lin, Jingjing; Gibson, Quinn; ...

2018-03-19

Research in topological matter has expanded to include the Dirac and Weyl semimetals which feature three-dimensional Dirac states protected by symmetry. Zirconium pentatelluride has been of recent interest as a potential Dirac or Weyl semimetal material. Here, we report the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties. A clear anomalous Hall effect is detected in every sample studied, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Large anomalous Hall signals develop when the magnetic field is rotated inmore » the plane of the stacked quasi-two-dimensional layers, with the values vanishing above about 60 K, where the negative longitudinal magnetoresistance also disappears. Finally, this suggests a close relation in their origins, which we attribute to the Berry curvature generated by the Weyl nodes.« less

Anomalous Hall effect in ZrTe5

NASA Astrophysics Data System (ADS)

Liang, Tian; Lin, Jingjing; Gibson, Quinn; Kushwaha, Satya; Liu, Minhao; Wang, Wudi; Xiong, Hongyu; Sobota, Jonathan A.; Hashimoto, Makoto; Kirchmann, Patrick S.; Shen, Zhi-Xun; Cava, R. J.; Ong, N. P.

2018-05-01

Research in topological matter has expanded to include the Dirac and Weyl semimetals1-10, which feature three-dimensional Dirac states protected by symmetry. Zirconium pentatelluride has been of recent interest as a potential Dirac or Weyl semimetal material. Here, we report the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties. A clear anomalous Hall effect is detected in every sample studied, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Large anomalous Hall signals develop when the magnetic field is rotated in the plane of the stacked quasi-two-dimensional layers, with the values vanishing above about 60 K, where the negative longitudinal magnetoresistance also disappears. This suggests a close relation in their origins, which we attribute to the Berry curvature generated by the Weyl nodes.

Unusual two-dimensional behavior of iron-based superconductors with low anisotropy

NASA Astrophysics Data System (ADS)

Kalenyuk, A. A.; Pagliero, A.; Borodianskyi, E. A.; Aswartham, S.; Wurmehl, S.; Büchner, B.; Chareev, D. A.; Kordyuk, A. A.; Krasnov, V. M.

2017-10-01

We study angular-dependent magnetoresistance in iron-based superconductors Ba1 -xNaxFe2As2 and FeTe1 -xSex . Both superconductors have relatively small anisotropies γ ˜2 and exhibit a three-dimensional (3D) behavior at low temperatures. However, we observe that they start to exhibit a profound two-dimensional behavior at elevated temperatures and in applied magnetic field parallel to the surface. We conclude that the unexpected two-dimensional (2D) behavior of the studied low-anisotropic superconductors is not related to layeredness of the materials, but is caused by appearance of surface superconductivity when magnetic field exceeds the upper critical field Hc 2(T ) for destruction of bulk superconductivity. We argue that the corresponding 3D-2D bulk-to-surface dimensional transition can be used for accurate determination of the upper critical field.

Anomalous Hall effect in ZrTe 5

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Tian; Lin, Jingjing; Gibson, Quinn

Research in topological matter has expanded to include the Dirac and Weyl semimetals which feature three-dimensional Dirac states protected by symmetry. Zirconium pentatelluride has been of recent interest as a potential Dirac or Weyl semimetal material. Here, we report the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties. A clear anomalous Hall effect is detected in every sample studied, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Large anomalous Hall signals develop when the magnetic field is rotated inmore » the plane of the stacked quasi-two-dimensional layers, with the values vanishing above about 60 K, where the negative longitudinal magnetoresistance also disappears. Finally, this suggests a close relation in their origins, which we attribute to the Berry curvature generated by the Weyl nodes.« less

Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Tianyu; Mani, R. G.; Wegscheider, W.

2014-11-10

We examine the role of the microwave power in the linear polarization angle dependence of the microwave radiation induced magnetoresistance oscillations observed in the high mobility GaAs/AlGaAs two dimensional electron system. The diagonal resistance R{sub xx} was measured at the fixed magnetic fields of the photo-excited oscillatory extrema of R{sub xx} as a function of both the microwave power, P, and the linear polarization angle, θ. Color contour plots of such measurements demonstrate the evolution of the lineshape of R{sub xx} versus θ with increasing microwave power. We report that the non-linear power dependence of the amplitude of the radiation-inducedmore » magnetoresistance oscillations distorts the cosine-square relation between R{sub xx} and θ at high power.« less

Anomalous normal-state magnetoresistance and vortex-glass transition in superconducting single crystal YNi(2)B(2)C

NASA Astrophysics Data System (ADS)

Chu, Rambis Kam-Hong

1998-10-01

We have investigated the normal-state magnetoresistance (MR) and nonlinear voltage-current (I-V) behavior on the newly discovered superconducting rare-earth nickel borocarbide YNi2B2C. By contrast to previous samples used in various experiments, our specimens were synthesized using the Floating-Zone Technique (FZT). This method produces high-crystalline quality samples and minimizes the number of defects. Measurements were taken on temperature and field dependence of the resistivity of YNi2B2C between T c+1 and T c+145 K in magnetic fields up to 8 T. The in-plane magnetoresistance (MR), Δrho(H,/ T) gradually reverses the sign from negative to positive as the temperature decreases. A pronounced crossover is observed at T=80 K with H=4 T. Within our field range, the salient sign-reversal and temperature-dependence of MR characterize a spin- fluctuation temperature (T sf~80 K). Below T sf, the spins fluctuate rapidly compared with their thermal motion and the sample appears to be nonmagnetic, and it is the topology of the Fermi surface yields the positive Δrho. However, the thermal fluctuations are rapid above T sf so that the local spin-polarization lives long enough to reveal the short-range parallel moments and the scattering events are diminished, Δrho is therefore negative. Despite the fact that YNi2B2C is widely considered nonmagnetic, our observation implies that Ni 3d electrons are not totally quenched as it was thought, and they are both spatially and temporally correlated. Our results are in quantitative agreement with the MR dependence upon temperature and applied field. Non-ohmic voltage-current (I-V) isotherms were also measured in a-oriented samples, and the mixed state of YNi2B2C was found to be similar to that of high-T c cuprates, possibly due to the relatively large thermal fluctuations compared with conventional type-II superconductors. Universal critical exponents, v and z were obtained from the critical scaling analysis. Our results are close to the previous I-V measurements in c-oriented specimens. These implied that YNi2B2C is isotropic at least within the context of vortex dynamics. Furthermore, the angular dependent I-V measurements indicated that there is no evidence of 3-d columnar vortices, which are anticipated from the Bose-glass model. Instead, the vortices behave like 2-d wandering pancakes with a very weak interlayer coupling. Our results are consistent with the vortex- glass model.

GMR sensors with linear and unhysteretic R(H) dependences

NASA Astrophysics Data System (ADS)

Stobiecki, F.; Szymański, B.; Luciński, T.; Dubowik, J.; Urbaniak, M.; Schmidt, M.; Röll, K.

2004-05-01

Magnetoresistance effect of Ni-Fe/Au/Co/Au sputtered multilayers was investigated. These new GMR structures, consisting of ferromagnetic layers with alternating in-plane (Ni-Fe) and out-of-plane (Co) magnetization configurations at remanence show magnetoresistive behavior attractive for some applications.

Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

NASA Astrophysics Data System (ADS)

Li, Hui; Wang, Huan-Wen; He, Hongtao; Wang, Jiannong; Shen, Shun-Qing

2018-05-01

Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

Large linear magnetoresistance in topological crystalline insulator Pb{sub 0.6}Sn{sub 0.4}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.

2016-01-15

Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Largemore » non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation of the carrier mobility.« less

Effect of annealing on magnetoresistance and microstructure of multilayered CoFe/Cu systems with different buffer layer

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Krinitsina, T. P.; Chernyshova, T. A.; Ustinov, V. V.

2015-02-01

The effects of annealing on the structure, magnetic hysteresis, and magnetoresistance of [Co90Fe10(15 Å)/Cu(23 Å)] n superlattices with Cr and Co90Fe10 buffer layers of different thicknesses have been studied. The optimum temperature and time of annealing that increase the magnetoresistance were shown to depend on the buffer layer thickness. The coefficients of effective interlayer diffusion due to the annealing have been determined.

Interface roughness induced asymmetric magnetic property in sputter-deposited Co/CoO/Co exchange coupled trilayers

NASA Astrophysics Data System (ADS)

Wang, J.; Sannomiya, T.; Shi, J.; Nakamura, Y.

2012-04-01

The effect of interface roughness on magnetic properties of exchange coupled polycrystalline Co/CoO(tAF)/Co trilayers has been investigated by varying antiferromagnetic layer (CoO) thickness. It has been found that the upper CoO/Co interface becomes rougher with increasing CoO layer thickness, resulting in stronger exchange bias of the upper interface than the lower one. The interfacial exchange coupling is strengthened by the increase of defect-generated uncompensated antiferromagnetic spins; such spins form coupling with spins in the Co layer at the interface. As a result, the CoO layer thickness dependence of exchange bias is much enhanced for the upper Co layer. The transition from anisotropic magnetoresistance to isotropic magnetoresistance for the top Co layer has also been found. This could be attributed to the defects, probably partial thin oxide layers, between Co grains in the top Co layer that leads a switch from spin-orbit scattering related magnetoresistance to spin-dependent electron scattering dominated magnetoresistance.

Giant magnetoresistance due to magnetoelectric currents in Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} hexaferrites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xian; School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074; Su, Zhijuan

2014-09-15

The giant magnetoresistance and magnetoelectric (ME) effects of Z-type hexaferrite Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} were investigated. The present experiments indicated that an induced magnetoelectric current in a transverse conical spin structure not only presented a nonlinear behavior with magnetic field and electric field but also depended upon a sweep rate of the applied magnetic field. More interestingly, the ME current induced magnetoresistance was measured, yielding a giant room temperature magnetoresistance of 32.2% measured at low magnetic fields (∼125 Oe). These results reveal great potential for emerging applications of multifunctional magnetoelectric ferrite materials.

Electrophysical Properties of Onion-Like Carbon

NASA Astrophysics Data System (ADS)

Tkachev, E. N.; Romanenko, A. I.; Zhdanov, K. R.; Anikeeva, O. B.; Buryakov, T. I.; Kuznetsov, V. L.; Moseenkov, S. I.

2016-06-01

The paper examines electrophysical properties of onion-like carbon (OLC) samples, where particles have the average size of 4-8 nm and are formed by 5-10 nested fullerene-like spheres connected by 1-3 common curved graphene shells into aggregates with a size of 50-300 nm. We measured the temperature dependence of electrical resistance from 4.2 to 300 K and dependence of magnetoresistance in magnetic fields up to 6 T at the temperature of 4.2 K. Temperature dependences of electrical resistance of samples can be described within the framework of the Mott law with variable hop length for the one-dimensional case or within the framework of the Efros-Shklovskii Coulomb gap. We observed the quadratically increasing positive magnetoresistance up to 6 T associated with compression of wave functions of conduction electrons. Negative magnetoresistance was observed in the range of magnetic fields up to 1-2 T in the case of some samples. This is due to the fact that magnetic field suppresses the contributions to magnetoresistance made by interference effects in the area of hopping conductivity. The measurements were used to estimate the localization radius that is comparable to the diameter of OLC particles (nano-onions).

Negative tunnel magnetoresistance and differential conductance in transport through double quantum dots

NASA Astrophysics Data System (ADS)

Trocha, Piotr; Weymann, Ireneusz; Barnaś, Józef

2009-10-01

Spin-dependent transport through two coupled single-level quantum dots weakly connected to ferromagnetic leads with collinear magnetizations is considered theoretically. Transport characteristics, including the current, linear and nonlinear conductances, and tunnel magnetoresistance are calculated using the real-time diagrammatic technique in the parallel, serial, and intermediate geometries. The effects due to virtual tunneling processes between the two dots via the leads, associated with off-diagonal coupling matrix elements, are also considered. Negative differential conductance and negative tunnel magnetoresistance have been found in the case of serial and intermediate geometries, while no such behavior has been observed for double quantum dots coupled in parallel. It is also shown that transport characteristics strongly depend on the magnitude of the off-diagonal coupling matrix elements.

Tunnel magnetoresistance and linear conductance of double quantum dots strongly coupled to ferromagnetic leads

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weymann, Ireneusz, E-mail: weymann@amu.edu.pl

2015-05-07

We analyze the spin-dependent linear-response transport properties of double quantum dots strongly coupled to external ferromagnetic leads. By using the numerical renormalization group method, we determine the dependence of the linear conductance and tunnel magnetoresistance on the degree of spin polarization of the leads and the position of the double dot levels. We focus on the transport regime where the system exhibits the SU(4) Kondo effect. It is shown that the presence of ferromagnets generally leads the suppression of the linear conductance due to the presence of an exchange field. Moreover, the exchange field gives rise to a transition frommore » the SU(4) to the orbital SU(2) Kondo effect. We also analyze the dependence of the tunnel magnetoresistance on the double dot levels' positions and show that it exhibits a very nontrivial behavior.« less

Magnetic anisotropies and rotational hysteresis in Ni81Fe19/Fe50Mn50 films: A study by torque magnetometry and anisotropic magnetoresistance

NASA Astrophysics Data System (ADS)

da Silva, O. E.; de Siqueira, J. V.; Kern, P. R.; Garcia, W. J. S.; Beck, F.; Rigue, J. N.; Carara, M.

2018-04-01

Exchange bias properties of NiFe/FeMn thin films have been investigated through X-ray diffraction, hysteresis loops, angular measurements of anisotropic magnetoresistance (AMR) and magnetic torque. As first predicted by Meiklejohn and Bean we found a decrease on the bias field as the NiFe layer thickness increases. However such reduction is not as strong as expected and it was attributed to the increase on the number of uncompensed antiferromagnetic spins resulting from the increase on the number of FeMn grains at the interface as the thickness of the NiFe layer is increased. The angular evolution of AMR and the magnetic torque were calculated and compared to the experimental ones using the minimization of the free magnetic energy and finding the magnetization equilibrium angle. The free energy, for each grain of the polycrystalline sample, is composed by the following terms: Zeeman, uniaxial, unidirectional and the rotatable energies. While from the AMR curves we obtain stable anisotropy fields independently on the measuring fields, from the torque curves we obtain increasing values of the uniaxial and rotatable fields, as the measuring field is increased. These results were attributed to the physical origin and sensitivity of the two different techniques. Magnetoresistance is mainly sensitive to the inner portion of the ferromagnetic layer, and the torque brings out information of the whole ferromagnetic layer including the interface of the layers. In this way, we believe that the increase in the uniaxial and rotatable values were due to an increase on the volume of the ferromagnetic layer, near the interfaces, which is made to rotate with the measuring field. Studying the rotational hysteresis by both techniques allows to separately obtain the contributions coming from the inner portion of ferromagnetic layer and from the interface.

Spin transport across antiferromagnets induced by the spin Seebeck effect

NASA Astrophysics Data System (ADS)

Cramer, Joel; Ritzmann, Ulrike; Dong, Bo-Wen; Jaiswal, Samridh; Qiu, Zhiyong; Saitoh, Eiji; Nowak, Ulrich; Kläui, Mathias

2018-04-01

For prospective spintronics devices based on the propagation of pure spin currents, antiferromagnets are an interesting class of materials that potentially entail a number of advantages as compared to ferromagnets. Here, we present a detailed theoretical study of magnonic spin current transport in ferromagnetic-antiferromagnetic multilayers by using atomistic spin dynamics simulations. The relevant length scales of magnonic spin transport in antiferromagnets are determined. We demonstrate the transfer of angular momentum from a ferromagnet into an antiferromagnet due to the excitation of only one magnon branch in the antiferromagnet. As an experimental system, we ascertain the transport across an antiferromagnet in Y3Fe5O12 |Ir20Mn80|Pt heterostructures. We determine the spin transport signals for spin currents generated in the Y3Fe5O12 by the spin Seebeck effect and compare to measurements of the spin Hall magnetoresistance in the heterostructure stack. By means of temperature-dependent and thickness-dependent measurements, we deduce conclusions on the spin transport mechanism across Ir20Mn80 and furthermore correlate it to its paramagnetic-antiferromagnetic phase transition.

Temperature dependence of giant magneto-resistance in PtMn- and Fe 2O 3-based specular spin valves

NASA Astrophysics Data System (ADS)

Kato, T.; Miyashita, K.; Iwata, S.; Tsunashima, S.; Sakakima, H.; Sugita, Y.; Kawawake, Y.

2002-02-01

Temperature dependence of the giant magneto-resistance (MR) was measured for spin valves with and without nano-oxide layer (NOL). In spin valves with NOL, the MR ratio increased more remarkably on lowering the temperature than in those without NOL. The temperature dependence of MR ratio and that of the resistivity were explained by using two-current model. The MR ratio enhanced with NOL is attributed to the increase of the mean free path of up-spin electrons.

Micromagnetic modal analysis of spin-transfer-driven ferromagnetic resonance of individual nanomagnets

NASA Astrophysics Data System (ADS)

Torres, L.; Finocchio, G.; Lopez-Diaz, L.; Martinez, E.; Carpentieri, M.; Consolo, G.; Azzerboni, B.

2007-05-01

In a recent investigation Sankey et al. [Phys. Rev. Lett. 96, 227601 (2006)] demonstrated a technique for measuring spin-transfer-driven ferromagnetic resonance in individual ellipsoidal PyCu nanomagnets as small as 30×90×5.5nm3. In the present work, these experiments are analyzed by means of full micromagnetic modeling finding quantitative agreement and enlightening the spatial distribution of the normal modes found in the experiment. The magnetic parameter set used in the computations is obtained by fitting static magnetoresistance measurements. The temperature effect is also included together with all the nonuniform contributions to the effective field as the magnetostatic coupling and the Ampere field. The polarization function of Slonczewski [J. Magn. Magn. Mater. 159, L1 (1996)] is used including its spatial and angular dependences. Experimental spin-transfer-driven ferromagnetic resonance spectra are reproduced using the same currents as in the experiment. The use of full micromagnetic modeling allows us to further investigate the spatial dependence of the modes. The dependence of the normal mode frequency on the dc and the external field together with a comparison to the normal modes induced by a microwave current is also addressed.

Anomalous negative magnetoresistance of two-dimensional electrons

NASA Astrophysics Data System (ADS)

Kanter, Jesse; Vitkalov, Sergey; Bykov, A. A.

2018-05-01

Effects of temperature T (6-18 K) and variable in situ static disorder on dissipative resistance of two-dimensional electrons are investigated in GaAs quantum wells placed in a perpendicular magnetic-field B⊥. Quantum contributions to the magnetoresistance, leading to quantum positive magnetoresistance (QPMR), are separated by application of an in-plane magnetic field. QPMR decreases considerably with both the temperature and the static disorder and is in good quantitative agreement with theory. The remaining resistance R decreases with the magnetic field exhibiting an anomalous polynomial dependence on B⊥:[R (B⊥) -R (0 ) ] =A (T ,τq) B⊥η where the power is η ≈1.5 ±0.1 in a broad range of temperatures and disorder. The disorder is characterized by electron quantum lifetime τq. The scaling factor A (T ,τq) ˜[κ(τq) +β (τq) T2] -1 depends significantly on both τq and T where the first term κ ˜τq-1/2 decreases with τq. The second term is proportional to the square of the temperature and diverges with increasing static disorder. Above a critical disorder the anomalous magnetoresistance is absent, and only a positive magnetoresistance, exhibiting no distinct polynomial behavior with the magnetic field, is observed. The presented model accounts memory effects and yields η = 3/2.

Tunnelling magnetoresistance and 1/f noise in phase-separated manganites

NASA Astrophysics Data System (ADS)

Sboychakov, A. O.; Rakhmanov, A. L.; Kugel, K. I.; Kagan, M. Yu; Brodsky, I. V.

2003-03-01

The magnetoresistance and the noise power of non-metallic phase-separated manganites are studied. The material is modelled by a system of small ferromagnetic metallic droplets (magnetic polarons or ferrons) in an insulating matrix. The concentration of metallic phase is assumed to be far from the percolation threshold. The electron tunnelling between ferrons causes the charge transfer in such a system. The magnetoresistance is determined both by the increase in the volume of the metallic phase and by the change in the electron hopping probability. In the framework of such a model, the low-field magnetoresistance is proportional to H2 and decreases with temperature as T-n, where n can vary from 1 to 5, depending on the parameters of the system. In the high-field limit, the tunnelling magnetoresistance grows exponentially. Different mechanisms of the voltage fluctuations in the system are analysed. The noise spectrum generated by the fluctuations of the number of droplets with extra electrons has a 1/f form over a wide frequency range. In the case of strong magnetic anisotropy, the 1/f noise can also arise due to fluctuations of the magnetic moments of ferrons. The 1/f noise power depends only slightly on the magnetic field in the low field range whereas it can increase as H6 in the high-field limit.

Large linear magnetoresistance in a new Dirac material BaMnBi2

NASA Astrophysics Data System (ADS)

Wang, Yi-Yan; Yu, Qiao-He; Xia, Tian-Long

2016-10-01

Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles. Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials. In this paper, we report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. BaMnBi2 is a metal with an antiferromagnetic transition at T N = 288 K. The temperature dependence of magnetization displays different behavior from CaMnBi2 and SrMnBi2, which suggests the possible different magnetic structure of BaMnBi2. The Hall data reveals electron-type carriers and a mobility μ(5 K) = 1500 cm2/V·s. Angle-dependent magnetoresistance reveals the quasi-two-dimensional (2D) Fermi surface in BaMnBi2. A crossover from semiclassical MR ˜ H 2 dependence in low field to MR ˜ H dependence in high field, which is attributed to the quantum limit of Dirac fermions, has been observed in magnetoresistance. Our results indicate the existence of Dirac fermions in BaMnBi2. Project supported by the National Natural Science Foundation of China (Grant No. 11574391), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 14XNLQ07).

Simulating the Effect of Contact Atomic Structure on the Spin-Dependent Transport Properties of Gold Nanowires

NASA Astrophysics Data System (ADS)

Ansarino, Masoud; Ravan, Bahram Abedi

Some experimental research works report on the superb magnetoresistance properties of magnetically contacted gold nanowires. With the intention of trying to understand the spin-dependent transport mechanism of these structures, in this work we have used first-principles density functional theory methods to investigate effects of interface structure on the spintronic characteristics of Au nanowires. Monatomic chains of gold are sandwiched between two ferromagnetic electrodes of Fe and by substituting the interfacial Fe atoms with some other transition metal elements (including Cr, Mn, Co and Ni) the occurrence of possible enhancement in the electronic conductance and magnetoresistance characteristics of the device are investigated. It is observed that replacing the interfacial atoms with Ni raises the junction’s magnetoresistance ratio to as high as 2000%.

Origin of the extremely large magnetoresistance in the semimetal YSb

DOE PAGES

Xu, J.; Ghimire, N. J.; Jiang, J. S.; ...

2017-08-29

Extremely large magnetoresistance (XMR) was recently discovered in YSb but its origin, along with that of many other XMR materials, is an active subject of debate. Here we demonstrate that YSb, with a cubic crystalline lattice and anisotropic bulk electron Fermi pockets, can be an excellent candidate for revealing the origin of XMR. We carried out angle dependent Shubnikov – de Haas quantum oscillation measurements to determine the volume and shape of the Fermi pockets. In addition, by investigating both Hall and longitudinal magnetoresistivities, we reveal that the origin of XMR in YSb lies in its carrier high mobility withmore » a diminishing Hall factor that is obtained from the ratio of the Hall and longitudinal magentoresistivities. The high mobility leads to a strong magnetic field dependence of the longitudinal magnetoconductivity while a diminishing Hall factor reveals the latent XMR hidden in the longitudinal magnetoconductivity whose inverse has a nearly quadratic magnetic-field dependence. The Hall factor highlights the deviation of the measured magnetoresistivity from its full potential value and provides a general formulation to reveal the origin of XMR behavior in high mobility materials and of nonsaturating MR behavior as a whole. Our approach can be readily applied to other XMR materials.« less

Thickness dependence and the role of spin transfer torque in nonlinear giant magnetoresistance of permalloy dual spin valves

NASA Astrophysics Data System (ADS)

Banerjee, N.; Aziz, A.; Ali, M.; Robinson, J. W. A.; Hickey, B. J.; Blamire, M. G.

2010-12-01

The recent discovery of nonlinear current-dependent magnetoresistance in dual spin valve devices [A. Aziz, O. P. Wessely, M. Ali, D. M. Edwards, C. H. Marrows, B. J. Hickey, and M. G. Blamire, Phys. Rev. Lett. 103, 237203 (2009)10.1103/PhysRevLett.103.237203] opens up the possibility for distinct physics which extends the standard model of giant magnetoresistance. When the outer ferromagnetic layers of a dual spin valve are antiparallel, the resulting accumulation of spin in the middle ferromagnetic layer strongly modifies its bulk and interfacial spin asymmetry and resistance. Here, we report experimental evidence of the role of bulk spin accumulation in this nonlinear effect and show that interfacial spin accumulation alone cannot account for the observed dependence of the effect on the thickness of the middle ferromagnetic layer. It is also shown that spin torque acting on the middle ferromagnetic layer combined with the nonlinear effect might be useful in understanding the dynamical features associated with the nonlinear behavior.

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to (113)A -oriented layers

NASA Astrophysics Data System (ADS)

Dreher, L.; Donhauser, D.; Daeubler, J.; Glunk, M.; Rapp, C.; Schoch, W.; Sauer, R.; Limmer, W.

2010-06-01

Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for (hhl) -oriented (Ga,Mn)As layers. Analytical expressions are derived for the strain-dependent free-energy density and for the resistivity tensor for monoclinic and orthorhombic crystal symmetries, phenomenologically describing the magnetic anisotropy and anisotropic magnetoresistance by appropriate anisotropy and resistivity parameters, respectively. Applying the results to (113)A orientation with monoclinic crystal symmetry, the expressions are used to determine the strain tensor and the shear angle of a series of (113)A -oriented (Ga,Mn)As layers by high-resolution x-ray diffraction and to probe the magnetic anisotropy and anisotropic magnetoresistance at 4.2 K by means of angle-dependent magnetotransport. Whereas the transverse-resistivity parameters are nearly unaffected by the magnetic field, the parameters describing the longitudinal resistivity are strongly field dependent.

The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads.

PubMed

Weymann, Ireneusz

2010-01-13

We analyze numerically the spin-dependent transport through coherent chains of three coupled quantum dots weakly connected to external magnetic leads. In particular, using the diagrammatic technique on the Keldysh contour, we calculate the conductance, shot noise and tunnel magnetoresistance (TMR) in the sequential and cotunneling regimes. We show that transport characteristics greatly depend on the strength of the interdot Coulomb correlations, which determines the spatial distribution of the electron wavefunction in the chain. When the correlations are relatively strong, depending on the transport regime, we find both negative TMR as well as TMR enhanced above the Julliere value, accompanied with negative differential conductance (NDC) and super-Poissonian shot noise. This nontrivial behavior of tunnel magnetoresistance is associated with selection rules that govern tunneling processes and various high-spin states of the chain that are relevant for transport. For weak interdot correlations, on the other hand, the TMR is always positive and not larger than the Julliere TMR, although super-Poissonian shot noise and NDC can still be observed.

NiFeCo/Cu superlattices with high magnetoresistive sensitivity and weak hysteresis

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Krinitsina, T. P.; Patrakov, E. I.; Proglyado, V. V.; Chernyshova, T. A.; Ustinov, V. V.

2016-10-01

The microstructure and the magetoresistive characteristics of [NiFeCo/Cu]8 superlattices prepared by magnetron sputtering with various thickness of the buffer NiFeCr layer and exhibiting a giant magnetoresistive effect have been studied. It has been found that these nanostructures are formed with a strong or weak hysteresis depending on the structure (bcc or fcc) formed in the NiFeCr buffer layer. The method of the substantial decrease in the hysteresis loop width of the magnetoresistance by using the composite Ta/NiFeCr buffer layer has been suggested.

Spin-dependent transport behavior in C{sub 60} and Alq{sub 3} based spin valves with a magnetite electrode (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xianmin, E-mail: xmzhang@wpi-aimr.tohoku.ac.jp; Mizukami, Shigemi; Ma, Qinli

2014-05-07

The spin-dependent transport behavior in organic semiconductors (OSs) is generally observed at low temperatures, which likely results from poor spin injection efficiency at room temperature from the ferromagnetic metal electrodes to the OS layer. Possible reasons for this are the low Curie temperature and/or the small spin polarization efficiency for the ferromagnetic electrodes used in these devices. Magnetite has potential as an advanced candidate for use as the electrode in spintronic devices, because it can achieve 100% spin polarization efficiency in theory, and has a high Curie temperature (850 K). Here, we fabricated two types of organic spin valves using magnetitemore » as a high efficiency electrode. C{sub 60} and 8-hydroxyquinoline aluminum (Alq{sub 3}) were employed as the OS layers. Magnetoresistance ratios of around 8% and over 6% were obtained in C{sub 60} and Alq{sub 3}-based spin valves at room temperature, respectively, which are two of the highest magnetoresistance ratios in organic spin valves reported thus far. The magnetoresistance effect was systemically investigated by varying the thickness of the Alq{sub 3} layer. Moreover, the temperature dependence of the magnetoresistance ratios for C{sub 60} and Alq{sub 3}-based spin valves were evaluated to gain insight into the spin-dependent transport behavior. This study provides a useful method in designing organic spin devices operated at room temperature.« less

Magnetization reversal and inverted magnetoresistance of exchange-biased spin valves with a gadolinium layer

NASA Astrophysics Data System (ADS)

Milyaev, M.; Naumova, L.; Chernyshova, T.; Proglyado, V.; Kamensky, I.; Krinitsina, T.; Ryabukhina, M.; Ustinov, V.

2017-03-01

FeMn-based spin valves with a gadolinium layer have been fabricated by magnetron sputtering. The magnetoresistive properties of the spin valves have been investigated at temperatures of 80-293 K. Temperature-induced switching between low- and high-resistance magnetic states has been revealed. Realization of the low- or high-resistance states depends on which magnetic moment dominates in the exchange-coupled Gd/CoFe, of Gd or CoFe. It has been shown that the switching temperature depends on the thickness of the gadolinium layer.

Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Chen-Lu; Zhang, Yan; Huang, Jian-Wei; Liu, Guo-Dong; Liang, Ai-Ji; Zhang, Yu-Xiao; Shen, Bing; Liu, Jing; Hu, Cheng; Ding, Ying; Liu, De-Fa; Hu, Yong; He, Shao-Long; Zhao, Lin; Yu, Li; Hu, Jin; Wei, Jiang; Mao, Zhi-Qiang; Shi, You-Guo; Jia, Xiao-Wen; Zhang, Feng-Feng; Zhang, Shen-Jin; Yang, Feng; Wang, Zhi-Min; Peng, Qin-Jun; Xu, Zu-Yan; Chen, Chuang-Tian; Zhou, Xing-Jiang

2017-08-01

WTe2 has attracted a great deal of attention because it exhibits extremely large and nonsaturating magnetoresistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concentration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range, and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identified a flat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a flat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.

Large magnetoresistance in the type-II Weyl semimetal WP 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Aifeng; Graf, D.; Liu, Yu

In this paper, we report a magnetotransport study on type-II Weyl semimetal WP 2 single crystals. Magnetoresistance exhibits a nonsaturating H n field dependence (14 300% at 2 K and 9 T), whereas systematic violation of Kohler's rule was observed. Quantum oscillations reveal a complex multiband electronic structure. The cyclotron effective mass close to the mass of free electron m e was observed in quantum oscillations along the b axis, while a reduced effective mass of about 0.5 m e was observed in α-axis quantum oscillations, suggesting Fermi surface anisotropy. The temperature dependence of the resistivity shows a large upturnmore » that cannot be explained by the multiband magnetoresistance of conventional metals. Finally, even though the crystal structure of WP 2 is not layered as in transition-metal dichalcogenides, quantum oscillations suggest partial two-dimensional character.« less

Large magnetoresistance in the type-II Weyl semimetal WP 2

DOE PAGES

Wang, Aifeng; Graf, D.; Liu, Yu; ...

2017-09-11

In this paper, we report a magnetotransport study on type-II Weyl semimetal WP 2 single crystals. Magnetoresistance exhibits a nonsaturating H n field dependence (14 300% at 2 K and 9 T), whereas systematic violation of Kohler's rule was observed. Quantum oscillations reveal a complex multiband electronic structure. The cyclotron effective mass close to the mass of free electron m e was observed in quantum oscillations along the b axis, while a reduced effective mass of about 0.5 m e was observed in α-axis quantum oscillations, suggesting Fermi surface anisotropy. The temperature dependence of the resistivity shows a large upturnmore » that cannot be explained by the multiband magnetoresistance of conventional metals. Finally, even though the crystal structure of WP 2 is not layered as in transition-metal dichalcogenides, quantum oscillations suggest partial two-dimensional character.« less

Anomalies of magnetoresistance of compounds with atomic clusters RB{sub 12} (R = Ho, Er, Tm, Lu)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sluchanko, N. E., E-mail: nes@lt.gpi.ru; Bogach, A. V.; Glushkov, V. V.

2009-04-15

The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB{sub 12} (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8-35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler's rule {delta}{rho}/{rho} = f({rho}(0, 300 K)H/{rho}(0, T)) is observed for the nonmagnetic metal LuB{sub 12}. In the magnetic dodecaborides HoB{sub 12}, ErB{sub 12}, and TmB{sub 12}, three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB{sub 12} is observed at T > 25 K; in themore » range T{sub N} {<=} T {<=} 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T < T{sub N}), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB{sub 12}. It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB{sub 12} and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation.« less

Hysteresis-free spin valves with a noncollinear configuration of magnetic anisotropy

NASA Astrophysics Data System (ADS)

Naumova, L. I.; Milyaev, M. A.; Chernyshova, T. A.; Proglyado, V. V.; Kamenskii, I. Yu.; Ustinov, V. V.

2014-06-01

A noncollinear configuration of magnetic anisotropy in spin valves with strong and weak interlayer couplings has been formed by annealing and cooling in a magnetic field. The dependence of the low-field magnetoresistance hysteresis loop width on the angle between the applied magnetic field and the principal axes of the magnetic anisotropy in a spin valve has been investigated. It has been found that, only in the case of a strong ferromagnetic interlayer coupling, the formation of a noncollinear configuration of the magnetic anisotropy provides a hysteresis-free character of the magnetization reversal of the free layer with retaining the maximum magnetoresistance and magnetoresistive sensitivity.

Current-induced three-dimensional domain wall propagation in cylindrical NiFe nanowires

NASA Astrophysics Data System (ADS)

Wong, D. W.; Purnama, I.; Lim, G. J.; Gan, W. L.; Murapaka, C.; Lew, W. S.

2016-04-01

We report on the magnetization configurations in single NiFe cylindrical nanowires grown by template-assisted electrodeposition. Angular anisotropic magnetoresistance measurements reveal that a three-dimensional helical domain wall is formed naturally upon relaxation from a saturated state. Micromagnetic simulations support the helical domain wall properties and its reversal process, which involves a splitting of the clockwise and anticlockwise vortices. When a pulsed current is applied to the nanowire, the helical domain wall propagation is observed with a minimum current density needed to overcome its intrinsic pinning.

Magnetization reversal in ferromagnetic spirals via domain wall motion

NASA Astrophysics Data System (ADS)

Schumm, Ryan D.; Kunz, Andrew

2016-11-01

Domain wall dynamics have been investigated in a variety of ferromagnetic nanostructures for potential applications in logic, sensing, and recording. We present a combination of analytic and simulated results describing the reliable field driven motion of a domain wall through the arms of a ferromagnetic spiral nanowire. The spiral geometry is capable of taking advantage of the benefits of both straight and circular wires. Measurements of the in-plane components of the spirals' magnetization can be used to determine the angular location of the domain wall, impacting the magnetoresistive applications dependent on the domain wall location. The spirals' magnetization components are found to depend on the spiral parameters: the initial radius and spacing between spiral arms, along with the domain wall location. The magnetization is independent of the parameters of the rotating field used to move the domain wall, and therefore the model is valid for current induced domain wall motion as well. The speed of the domain wall is found to depend on the frequency of the rotating driving field, and the domain wall speeds can be reliably varied over several orders of magnitude. We further demonstrate a technique capable of injecting multiple domain walls and show the reliable and unidirectional motion of domain walls through the arms of the spiral.

Interlayer exchange coupling in complex magnetic multilayers

NASA Astrophysics Data System (ADS)

Xiang-dong, Zhang; Lie-ming, Li; Bo-zang, Li; Fu-cho, Pu

1998-07-01

We extend the hole confinement model of Edwards et al. to the problem of two kinds of complex magnetic sandwich structures. One is the magnetic sandwich covered on both sides by nonmagnetic films (case 1) and the other is that covered by magnetic films (case 2). The interlayer exchange coupling and the angular dependence of coupling energy in the two cases are investigated systematically. For case 1, our results show that the magnetic and outer nonmagnetic films influence significantly the oscillation behavior of exchange coupling and the appearance of noncollinear exchange coupling is very sensitive to the thickness of magnetic and outer nonmagnetic layers. Our results also show that the nonoscillatory component of the coupling generally varies with the thickness of magnetic (outer nonmagnetic) films and the results in the case where the thickness of both magnetic (outer nonmagnetic) films vary simultaneously are significantly different from that in the case where the thickness of one of the two magnetic (outer nonmagnetic) films is fixed while the other is varied, which is qualitatively in agreement with the experimental measurements. For case 2, the exponential dependence of exchange coupling on the thickness of the intermagnetic layer has been obtained, similar to the Parkin's experimental results for giant magnetoresistance.

Active control of magnetoresistance of organic spin valves using ferroelectricity

PubMed Central

Sun, Dali; Fang, Mei; Xu, Xiaoshan; Jiang, Lu; Guo, Hangwen; Wang, Yanmei; Yang, Wenting; Yin, Lifeng; Snijders, Paul C.; Ward, T. Z.; Gai, Zheng; Zhang, X.-G.; Lee, Ho Nyung; Shen, Jian

2014-01-01

Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves. PMID:25008155

Observation of a thermally enhanced magnetoresistance in NiFe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Y.; Feng, C., E-mail: fengchun@ustb.edu.cn, E-mail: ghyu@mater.ustb.edu.cn; Liu, D. X.

2016-04-15

A thermally enhanced magnetoresistance (ThMR) was designed and obtained by simultaneously applying charge and heat currents to a NiFe thin film. From the measurement we observed that the magnetoresistance value was as high as -22600% when the input charge current and applied temperature gradient was 0.966 μA and 2.5 °C/mm, respectively. This ThMR can be controllable by adjusting the relative values of the input charge and heat currents. On increasing the input charge current from 0.85 to 1.05 μA by fixing the temperature gradient at 2.5 °C/mm, the ThMR first increased from 9% to 183% and then decreased from -259%more » to -13%, at intervals of ∼0.96 μA. This can be explained by the spin-dependent transport phenomenon i.e., scattering induced sign difference between magnetoresistance and magnetothermopower in NiFe.« less

Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

PubMed

Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

2012-06-29

Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

Positive magnetoresistance in Fe3Se4 nanowires

NASA Astrophysics Data System (ADS)

Li, D.; Jiang, J. J.; Liu, W.; Zhang, Z. D.

2011-04-01

We report the magnetotransport properties of Fe3Se4 nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe3Se4 nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction.

Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

NASA Astrophysics Data System (ADS)

Cheng, Yihong; Chen, Kai; Zhang, Shufeng

2018-01-01

We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

Predicition and Discovery of High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Crystalline Barriers

NASA Astrophysics Data System (ADS)

Butler, William

2005-03-01

Tunneling magnetoresistance in excess of 200% has recently been observed in magnetic tunnel junctions using bcc Fe or bcc CoFe electrodes with crystalline MgO tunnel barriers[1,2]. These results demonstrate that tunneling magnetoresistance depends on more than the ``electrode polarization''. This talk will describe the calculations that predicted high TMR in these and other systems[3,4,5]. These calculations helped us to understand certain principles that may lead to high TMR through coherent electron tunneling. They can be briefly summarized as follows: (1) If the symmetry of a Bloch state can be preserved as electrons cross the interfaces between the electrode and the tunnel barrier, this be used to advantage for spin filtering. (2) Evanescent states of different symmetries decay at different rates in the barrier. (3) Interfacial bonding can be very important in determining the probability that an electron can traverse the interface. (4) Electrons of disallowed symmetry cannot propagate in an electrode. Once these simple principles are understood, simple band codes can be used to screen and to develop heterostructures with the proper symmetries to obtain high TMR. [1] S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant AND S.-H. Yang, ``Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers,'' Nature Materials, Advance Online Publication [2] S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, K. Ando, ``Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions,'' Nature Materials, Advance Online Publication [3] W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, ``Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches'' Phys. Rev. B 63, 054416 (2001) [4] J. Mathon, A. Umerski, ``Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction,'' Phys. Rev. B 63, 220403(R) (2001). [5] X.-G. Zhang, and W. H. Butler, ``Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunnel junctions,'' Phys. Rev. B 70, 172407 (2004)

Spin dependent transport and spin transfer in nanoconstrictions and current confined nanomagnets

NASA Astrophysics Data System (ADS)

Ozatay, Ozhan

In this thesis, I have employed point contact spectroscopy to determine the nature of electron transport across constrained domain walls in a ferromagnetic nanocontact and to uncover the relationship between ballisticity of electron transport and domain wall magnetoresistance. In the range of hole sizes studied (from 10 to 3 nm) the resulting magnetoresistance was found to be less than 0.5% and one that increases with decreasing contact size. I have used point contacts as local probes, to study the spin dependent transport across Ferromagnet/Normal Metal/Ferromagnet(FM/NM/FM) trilayers as well as the consequences of localized spin polarized current injection into a nano magnet on spin angular momentum transfer and high frequency magnetization dynamics. I have demonstrated that absolute values for spin transfer switching critical currents are reduced in this new geometry as compared to uniform current injection. I have also performed micromagnetic simulations to determine the evolution of magnetization under the application of magnetic fields and currents to gain more insights into experimental results. I have used Scanning Transmission Electron Microscopy (STEM), X-Ray Photoemission Spectroscopy (XPS) and Electron Energy Loss Spectroscopy (EELS) techniques to characterize the interfacial mixing and oxygen diffusion in the metallic multilayers of interest. I have shown that the Ta/CuOx bilayer structure provides a smooth substrate by improving interfacial roughness due to grain boundary diffusion of oxygen and reaction with Ta that fills in the grain boundary gaps in Cu. Analysis of the Py/AlOx interface proved a strong oxidation passivation on the Py surface by Al coating accompanied by Fe segregation into the alumina. I have utilized the characterization results to design a new nanomagnet whose sidewalls are protected from adventitious sidewall oxide layers and yields improved device performance. The oxide layers that naturally develop at the sidewalls of Py nanomagnets cause an enhancement in magnetic damping especially for temperatures below the blocking temperature of the AFM layer (≤40K). Studies with pillars protected by Al coating and ones with more NiO coating (˜2.5 nm) shed light onto the role of surface oxides in determining temperature dependent behaviour of both spin torque and field driven switching characteristics.

Influence of nonmagnetic Al ions on magnetoresistance of double-perovskite Sr2Fe1-xAlxMoO6 (0<=x<=0.30)

NASA Astrophysics Data System (ADS)

Sui, Yu; Wang, Xianjie; Cheng, Jinguang; Liu, Zhiguo; Miao, Jipeng; Huang, Xiqiang; Lu, Zhe; Qian, Zhengnan; Su, Wenhui; Tang, Jinke; Ong, C. K.

2005-09-01

The structural, magnetic, and magnetoresistance properties of the double-perovskite series Sr2Fe1-xAlxMoO6 (0<=x<=0.30) were systematically investigated in order to clarify the influence of nonmagnetic Al ions on the magnetoresistance. The structural refinements of these samples show that the degree of cationic order increases gradually from 88.5% for x=0 to 92% for x=0.30 without any change in the crystal structure. The magnetization measurements reveal that the substitution of nonmagnetic Al ion for Fe ion enhances the magnetic moment per Fe ion significantly. In addition, the magnetic-field dependence of magnetization and magnetoresistance of these Sr2Fe1-xAlxMoO6 samples were all fitted excellently by taking into account the contributions from ferromagnetic-coupled Fe-O-Mo region and nonferromagnetic-coupled regions. The fitting results indicate that the low-field magnetoresistance can be greatly enhanced due to the separation of the cationic-ordered Fe-O-Mo regions by the paramagnetic Mo-O-Al-O-Mo chains introduced through Al doping. Furthermore, doping nonmagnetic Al ions also suppress the formation of antiferromagnetic Fe-O-Fe antiphase boundaries, and then lead to the improvement of cation ordering and the reduction of magnetoresistance under high field.

Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

NASA Astrophysics Data System (ADS)

Shang, T.; Yang, H. L.; Zhan, Q. F.; Zuo, Z. H.; Xie, Y. L.; Liu, L. P.; Zhang, S. L.; Zhang, Y.; Li, H. H.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

2016-10-01

We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.

Remote microwave monitoring of magnetization switching in CoFeB/Ta/CoFeB spin logic device

NASA Astrophysics Data System (ADS)

Morgunov, R.; L'vova, G.; Talantsev, A.; Koplak, O.; Petit-Watelot, S.; Devaux, X.; Migot, S.; Lu, Y.; Mangin, S.

2017-05-01

Stable magnetic states of the MgO/CoFeB/Ta/CoFeB/MgO/Ta spin valve as well as transitions between the states were detected by microwave magnetoresistance (MMR) measured in the cavity of an electron spin resonance spectrometer. Advantages of this experimental technique are the possibility to study the orientation dependence of the MMR, the absence of the additional contact/sample interfaces, the wireless control of the spin valves, and the compatibility of the MMR measurements with ferromagnetic resonance experiments. The magnetic field dependence of the first derivation of the microwave absorption allows one to judge about the negative magnetoresistance of the layers and positive interlayer giant magnetoresistance. The obtained experimental results could be used for engineering of the microwave high sensitive sensors available for remote identification of the stable magnetic and logic states of the spin valves needful in medical spintronics to detect biological objects labeled with nanoparticles.

Temperature dependence of magnetoresistance in copper single crystals

NASA Astrophysics Data System (ADS)

Bian, Q.; Niewczas, M.

2018-03-01

Transverse magnetoresistance of copper single crystals has been measured in the orientation of open-orbit from 2 K to 20 K for fields up to 9 T. The experimental Kohler's plots display deviation between individual curves below 16 K and overlap in the range of 16 K-20 K. The violation of the Kohler's rule below 16 K indicates that the magnetotransport can not be described by the classical theory of electron transport on spherical Fermi surface with a single relaxation time. A theoretical model incorporating two energy bands, spherical and cylindrical, with different relaxation times has been developed to describe the magnetoresistance data. The calculations show that the electron-phonon scattering rates at belly and neck regions of the Fermi surface have different temperature dependencies, and in general, they do not follow T3 law. The ratio of the relaxation times in belly and neck regions decreases parabolically with temperature as A - CT2 , with A and C being constants.

Effect of CoFeB electrode compositions on low frequency magnetic noise in tunneling magnetoresistance sensors

NASA Astrophysics Data System (ADS)

Wisniowski, P.; Dabek, M.; Wrona, J.; Cardoso, S.; Freitas, P. P.

2017-12-01

We study the effect of CoFeB electrode compositions on frequency dependent magnetic noise in tunneling magnetoresistance sensors with variable field sensitivity. We use the relationship between the normalized 1/f noise parameter (αt) and the magnetoresistance sensitivity product (MSP) to compare the magnetic noise of sensors with Co40Fe40B20, Co60Fe20B20, and Co20Fe60B20 electrodes. We observed the lowest slope of the αt vs. MSP curve of 9.1 × 10-13 μm3 T and a 1/f noise corner as low as 300 Hz for the sensors with Co60Fe20B20 electrodes. Furthermore, all sensors at a specific value of the magnetoresistance sensitivity product showed a deviation from the linear relationship between αt and MSP. The results show that in the design of high sensitivity CoFeB-MgO-CoFeB based tunneling magnetoresistance sensors for low field detection, selection of CoFeB electrodes is important and can be used to significantly improve the low frequency field detection limit.

Negative Magnetoresistance in Amorphous Indium Oxide Wires

PubMed Central

Mitra, Sreemanta; Tewari, Girish C; Mahalu, Diana; Shahar, Dan

2016-01-01

We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions. PMID:27876859

Magnetoresistivity of thin YBa2Cu3O7-δ films on sapphire substrate

NASA Astrophysics Data System (ADS)

Probst, Petra; Il'in, Konstantin; Engel, Andreas; Semenov, Alexei; Hübers, Heinz-Wilhelm; Hänisch, Jens; Holzapfel, Bernhardt; Siegel, Michael

2012-09-01

Magnetoresistivity of YBa2Cu3O7-δ films with thicknesses between 7 and 100 nm deposited on CeO2 and PrBa2Cu3O7-δ buffer layers on sapphire substrate has been measured to analyze the temperature dependence of the second critical magnetic field Bc2. To define Bc2, the mean-field transition temperature Tc was evaluated by fitting the resistive transition in zero magnetic field with the fluctuation conductivity theory of Aslamazov and Larkin. At T → Tc the Bc2(T) dependence shows a crossover from downturn to upturn curvature with the increase in film thickness.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, J.; Ghimire, N. J.; Jiang, J. S.

Extremely large magnetoresistance (XMR) was recently discovered in YSb but its origin, along with that of many other XMR materials, is an active subject of debate. Here we demonstrate that YSb, with a cubic crystalline lattice and anisotropic bulk electron Fermi pockets, can be an excellent candidate for revealing the origin of XMR. We carried out angle dependent Shubnikov – de Haas quantum oscillation measurements to determine the volume and shape of the Fermi pockets. In addition, by investigating both Hall and longitudinal magnetoresistivities, we reveal that the origin of XMR in YSb lies in its carrier high mobility withmore » a diminishing Hall factor that is obtained from the ratio of the Hall and longitudinal magentoresistivities. The high mobility leads to a strong magnetic field dependence of the longitudinal magnetoconductivity while a diminishing Hall factor reveals the latent XMR hidden in the longitudinal magnetoconductivity whose inverse has a nearly quadratic magnetic-field dependence. The Hall factor highlights the deviation of the measured magnetoresistivity from its full potential value and provides a general formulation to reveal the origin of XMR behavior in high mobility materials and of nonsaturating MR behavior as a whole. Our approach can be readily applied to other XMR materials.« less

Quantum transport in topological semimetals under magnetic fields

NASA Astrophysics Data System (ADS)

Lu, Hai-Zhou; Shen, Shun-Qing

2017-06-01

Topological semimetals are three-dimensional topological states of matter, in which the conduction and valence bands touch at a finite number of points, i.e., the Weyl nodes. Topological semimetals host paired monopoles and antimonopoles of Berry curvature at the Weyl nodes and topologically protected Fermi arcs at certain surfaces. We review our recent works on quantum transport in topological semimetals, according to the strength of the magnetic field. At weak magnetic fields, there are competitions between the positive magnetoresistivity induced by the weak anti-localization effect and negative magnetoresistivity related to the nontrivial Berry curvature. We propose a fitting formula for the magnetoconductivity of the weak anti-localization. We expect that the weak localization may be induced by inter-valley effects and interaction effect, and occur in double-Weyl semimetals. For the negative magnetoresistance induced by the nontrivial Berry curvature in topological semimetals, we show the dependence of the negative magnetoresistance on the carrier density. At strong magnetic fields, specifically, in the quantum limit, the magnetoconductivity depends on the type and range of the scattering potential of disorder. The high-field positive magnetoconductivity may not be a compelling signature of the chiral anomaly. For long-range Gaussian scattering potential and half filling, the magnetoconductivity can be linear in the quantum limit. A minimal conductivity is found at the Weyl nodes although the density of states vanishes there.

Extremely large magnetoresistance and Kohler's rule in PdSn 4 : A complete study of thermodynamic, transport, and band-structure properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin

The recently discovered material PtSn 4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn 4 is isostructural to PtSn 4 with the same electron count. Here, we report on the physical properties of high-quality single crystals of PdSn 4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn 4 has physical properties that are qualitatively similar to those of PtSn 4 , but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSnmore » 4 is gapped out for PdSn 4. By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn 4 and PtSn 4; based on detailed analysis of the magnetoresistivity ρ ( H , T ) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we also find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.« less

Positive magnetoresistance of single-crystal bilayer manganites (La{sub 1−z}Nd{sub z}){sub 1.4}Sr{sub 1.6}Mn{sub 2}O{sub 7} (z = 0, 0.1)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shaykhutdinov, K. A.; Petrov, M. I.; Terent'ev, K. I.

2015-04-28

We investigate magnetoresistance, ρ{sub c}, of single-crystal bilayer lanthanum manganites (La{sub 1−z}Nd{sub z}){sub 1.4}Sr{sub 1.6}Mn{sub 2}O{sub 7} (z = 0 and 0.1) at a transport current flowing along the crystal c axis and in external magnetic fields applied parallel to the crystal c axis or ab plane. It is demonstrated that the La{sub 1.4}Sr{sub 1.6}Mn{sub 2}O{sub 7} manganite exhibits the positive magnetoresistance effect in the magnetic field applied in the ab sample plane at the temperatures T < 60 K, along with the negative magnetoresistance typical of all the substituted lanthanum manganites. In the (La{sub 0.9}Nd{sub 0.1}){sub 1.4}Sr{sub 1.6}Mn{sub 2}O{sub 7} sample, the positive magnetoresistancemore » effect is observed at temperatures of 60–80 K in an applied field parallel to the c axis. The mechanism of this effect is shown to be fundamentally different from the colossal magnetoresistance effect typical of lanthanum manganites. The positive magnetoresistance originates from spin-dependent tunneling of carriers between the manganese-oxygen bilayers and can be explained by features of the magnetic structure of the investigated compounds.« less

Extremely large magnetoresistance and Kohler's rule in PdSn 4 : A complete study of thermodynamic, transport, and band-structure properties

DOE PAGES

Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; ...

2017-10-27

The recently discovered material PtSn 4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn 4 is isostructural to PtSn 4 with the same electron count. Here, we report on the physical properties of high-quality single crystals of PdSn 4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn 4 has physical properties that are qualitatively similar to those of PtSn 4 , but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSnmore » 4 is gapped out for PdSn 4. By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn 4 and PtSn 4; based on detailed analysis of the magnetoresistivity ρ ( H , T ) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we also find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.« less

Unraveling the temperature and voltage dependence of magnetic field effects in organic semiconductors

NASA Astrophysics Data System (ADS)

Janssen, Paul; Wouters, Steinar H. W.; Cox, Matthijs; Koopmans, Bert

2013-11-01

In recent years, it was discovered that the current through an organic semiconductor, sandwiched between two non-magnetic electrodes, can be changed significantly by applying a small magnetic field. This surprisingly large magnetoresistance effect, often dubbed as organic magnetoresistance (OMAR), has puzzled the young field of organic spintronics during the last decade. Here, we present a detailed study on the voltage and temperature dependence of OMAR, aiming to unravel the lineshapes of the magnetic field effects and thereby gain a deeper fundamental understanding of the underlying microscopic mechanism. Using a full quantitative analysis of the lineshapes, we are able to extract all linewidth parameters and the voltage and temperature dependencies are explained with a recently proposed trion mechanism. Moreover, explicit microscopic simulations show a qualitative agreement to the experimental results.

Magnetic and structural properties of glass-coated Heusler-type microwires exhibiting martensitic transformation.

PubMed

Zhukov, A; Ipatov, M; Del Val, J J; Zhukova, V; Chernenko, V A

2018-01-12

We have studied magnetic and structural properties of the Heusler-type Ni-Mn-Ga glass-coated microwires prepared by Tailor-Ulitovsky technique. As-prepared sample presents magnetoresistance effect and considerable dependence of magnetization curves (particularly magnetization values) on magnetic field attributed to the magnetic and atomic disorder. Annealing strongly affects the temperature dependence of magnetization and Curie temperature of microwires. After annealing of the microwires at 973 K, the Curie temperature was enhanced to about 280 K which is beneficial for the magnetic solid state refrigeration. The observed hysteretic anomalies on the temperature dependences of resistance and magnetization in the as-prepared and annealed samples are produced by the martensitic transformation. The magnetoresistance and magnetocaloric effects have been investigated to illustrate a potential technological capability of studied microwires.

Tunneling magnetoresistance sensor with pT level 1/f magnetic noise

NASA Astrophysics Data System (ADS)

Deak, James G.; Zhou, Zhimin; Shen, Weifeng

2017-05-01

Magnetoresistive devices are important components in a large number of commercial electronic products in a wide range of applications including industrial position sensors, automotive sensors, hard disk read heads, cell phone compasses, and solid state memories. These devices are commonly based on anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR), but over the past few years tunneling magnetoresistance (TMR) has been emerging in more applications. Here we focus on recent work that has enabled the development of TMR magnetic field sensors with 1/f noise of less than 100 pT/rtHz at 1 Hz. Of the commercially available sensors, the lowest noise devices have typically been AMR, but they generally have the largest die size. Based on this observation and modeling of experimental data size and geometry dependence, we find that there is an optimal design rule that produces minimum 1/f noise. This design rule requires maximizing the areal coverage of an on-chip flux concentrator, providing it with a minimum possible total gap width, and tightly packing the gaps with MTJ elements, which increases the effective volume and decreases the saturation field of the MTJ freelayers. When properly optimized using this rule, these sensors have noise below 60 pT/rtHz, and could possibly replace fluxgate magnetometers in some applications.

Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

PubMed Central

Arias, Sergio Iván Ravello; Muñoz, Diego Ramírez; Moreno, Jaime Sánchez; Cardoso, Susana; Ferreira, Ricardo; de Freitas, Paulo Jorge Peixeiro

2013-01-01

Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function Zt(if) is obtained considering it as the relationship between sensor output voltage and input sensing current, Zt(jf)=Vo,sensor(jf)/Isensor(jf). The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), spin-valve (GMR-SV) and tunnel magnetoresistance (TMR). The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications. PMID:24351648

Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

NASA Astrophysics Data System (ADS)

Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

2018-04-01

Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

Measurement of dielectric properties at low temperatures: application to the study of magnetoresistive manganite/ insulating oxide bulk composites

NASA Astrophysics Data System (ADS)

Vanderbemden, P.; Rivas-Murias, B.; Lovchinov, V.; Vertruyen, B.

2010-11-01

In this paper, we report low temperature dielectric measurements of bulk composite electroceramic samples containing a colossal magnetoresistive (CMR) manganite phase (La0.7Ca0.3MnO3 [abbreviated LCMO]) and an insulating phase (Mn3O4). Details of the experimental system are given and possible experimental artefacts due to moisture are outlined. For a LCMO volume fraction of ~ 16%, the permittivity of the LCMO/ Mn3O4 composite at T = 50 K is found to be much higher than that of pure Mn3O4 and magnetic field dependent. This effect is related to an extrinsic space charge polarization mechanism between the insulating phase (Mn3O4) and the conducting magnetoresistive phase (LCMO).

Positive magnetoresistance of La0.7Sr0.3MnO3/C composites

NASA Astrophysics Data System (ADS)

Kabirov, Yu. V.; Gavrilyachenko, V. G.; Bogatin, A. S.

2016-07-01

The perovskite manganite La0.7Sr0.3MnO3 compound is used as a component in ceramic (1-x)(La0.7Sr0.3MnO3)-xC composites at x = 0.15-0.85. It is found that every studied specimen is characterized by the linear dependence of the positive magnetoresistance (PMR) on the magnetic field strength at room temperature. The 0.6(La0.7Sr0.3MnO3)-0.4C composite has the largest magnetoresistance value (15%) at room temperature and intensity of magnetic field H=15kOe. A possible mechanism for the PMR of (1-x)(La0.7Sr0.3MnO3)-xC composites is discussed.

Butterfly magnetoresistance, quasi-2D Dirac Fermi surface and topological phase transition in ZrSiS.

PubMed

Ali, Mazhar N; Schoop, Leslie M; Garg, Chirag; Lippmann, Judith M; Lara, Erik; Lotsch, Bettina; Parkin, Stuart S P

2016-12-01

Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. We report the observation of an unusual "butterfly"-shaped titanic angular magnetoresistance (AMR) in the nonmagnetic Dirac material, ZrSiS, which we find to be the most conducting sulfide known, with a 2-K resistivity as low as 48(4) nΩ⋅cm. The MR in ZrSiS is large and positive, reaching nearly 1.8 × 10 5 percent at 9 T and 2 K at a 45° angle between the applied current ( I || a ) and the applied field (90° is H || c ). Approaching 90°, a "dip" is seen in the AMR, which, by analyzing Shubnikov de Haas oscillations at different angles, we find to coincide with a very sharp topological phase transition unlike any seen in other known Dirac/Weyl materials. We find that ZrSiS has a combination of two-dimensional (2D) and 3D Dirac pockets comprising its Fermi surface and that the combination of high-mobility carriers and multiple pockets in ZrSiS allows for large property changes to occur as a function of angle between applied fields. This makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons as well as opens the door to creating devices focused on switching between different parts of the Fermi surface and different topological states.

Effects of interface electric field on the magnetoresistance in spin devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.

2014-04-28

An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interfacemore » electronic structures.« less

Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier

NASA Astrophysics Data System (ADS)

Al-Mahdawi, Muftah; Sahashi, Masashi

2014-01-01

We report on the observation of anisotropic magnetoresistance (AMR) in vertical asymmetric nano-contacts (NCs) made through AlOx nano-oxide layer (NOL) formed by ion-assisted oxidation method in the film stack of Co/AlOx-NOL/Pt. Analysis of NC formation was based on in situ conductive atomic force microscopy and transmission electron microscopy. Depending on the purity of NCs from Al contamination, we observed up to 29% AMR ratio at room temperature.

Large magnetoresistance of nickel-silicide nanowires: non-equilibrium heating of magnetically-coupled dangling bonds.

PubMed

Kim, T; Chamberlin, R V; Bird, J P

2013-03-13

We demonstrate large (>100%) time-dependent magnetoresistance in nickel-silicide nanowires and develop a thermodynamic model for this behavior. The model describes nonequilibrium heating of localized spins in an increasing magnetic field. We find a strong interaction between spins but no long-range magnetic order. The spins likely come from unpaired dangling bonds in the interfacial layers of the nanowires. The model indicates that although these bonds couple weakly to a thermal bath, they dominate the nanowire resistance.

Transport Properties and Magnetoresistance of La0.8Ca0.13Ag0.07MnO3 Perovskite Manganite Synthesized by Sol-Gel Method

NASA Astrophysics Data System (ADS)

Kurniawan, B.; Ruli, F.; Imaduddin, A.; Kamila, R.

2018-05-01

In this paper, we investigate the transport properties and magnetoresistance effect of La0.8Ca0.13Ag0.07MnO3 perovskite manganite synthesized by sol-gel method. The XRD pattern of the sample shows a rhombohedral perovskite structure with space group R3¯c. The EDX analysis confirms that the sample contains all expected chemical elements without any additional impurity. The temperature dependence of electrical resistivity was measured using a cryogenic magnetometer. The results show a metal-insulator transition temperature (TM-I ) at 280 K. The resistivity of the sample increases with an increase of temperature below TM-I . Theoretical analyses of the temperature dependence of resistivity suggest that the resistivity due to electron-electron scattering is predominant below TI-M. The resistivity of the sample decreases when applied magnetic field 1 T at a temperature range of 10 K to 300 K. The magnetoresistance of La0.8Ca0.13Ag0.07MnO3 emanates from spin-polarized tunneling process at the grain boundary.

Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

NASA Astrophysics Data System (ADS)

Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

2017-08-01

In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

Influence of the Ar-ion irradiation on the giant magnetoresistance in Fe/Cr multilayers

NASA Astrophysics Data System (ADS)

Kopcewicz, M.; Stobiecki, F.; Jagielski, J.; Szymański, B.; Schmidt, M.; Dubowik, J.; Kalinowska, J.

2003-05-01

The influence of 200 keV Ar-ion irradiation on the interlayer coupling in Fe/Cr multilayers exhibiting the giant magnetoresistance (GMR) effect is studied by the conversion electron Mössbauer spectroscopy (CEMS), vibrating sample magnetometer hysteresis loops, magnetoresistivity, and electric resistivity measurements and supplemented by the small-angle x-ray diffraction. The increase of Ar-ion dose causes an increase of interface roughness, as evidenced by the increase of the Fe step sites detected by CEMS. The modification of microstructure induces changes in magnetization reversal indicating a gradual loss of antiferromagnetic (AF) coupling correlated with the degradation of the GMR effect. Distinctly weaker degradation of AF coupling and the GMR effect observed for irradiated samples with a thicker Cr layer thickness suggest that observed effects are caused by pinholes creation. The measurements of temperature dependence of remanence magnetization confirm increase of pinhole density and sizes during implantation. Other effects which can influence spin dependent contribution to the resistance, such as interface roughness as well as shortening of mean-free path of conduction electrons, are also discussed.

Anomalous spin Hall magnetoresistance in Pt/Co bilayers

NASA Astrophysics Data System (ADS)

Kawaguchi, Masashi; Towa, Daiki; Lau, Yong-Chang; Takahashi, Saburo; Hayashi, Masamitsu

2018-05-01

We have studied the spin Hall magnetoresistance (SMR), the magnetoresistance within the plane transverse to the current flow, of Pt/Co bilayers. We find that the SMR increases with increasing Co thickness: the effective spin Hall angle for bilayers with thick Co exceeds the reported values of Pt when a conventional drift-diffusion model is used. An extended model including spin transport within the Co layer cannot account for the large SMR. To identify its origin, contributions from other sources are studied. For most bilayers, the SMR increases with decreasing temperature and increasing magnetic field, indicating that magnon-related effects in the Co layer play little role. Without the Pt layer, we do not observe the large SMR found for the Pt/Co bilayers with thick Co. Implementing the effect of the so-called interface magnetoresistance and the textured induced anisotropic scattering cannot account for the Co thickness dependent SMR. Since the large SMR is present for W/Co but its magnitude reduces in W/CoFeB, we infer that its origin is associated with a particular property of Co.

Effect of charge ordering and phase separation on the electrical and magnetoresistive properties of polycrystalline La0.4Eu0.1Ca0.5MnO3

NASA Astrophysics Data System (ADS)

Krichene, A.; Boujelben, W.; Mukherjee, S.; Shah, N. A.; Solanki, P. S.

2018-03-01

We have investigated the effect of charge ordering and phase separation on the electrical and magnetotransport properties of La0.4Eu0.1Ca0.5MnO3 polycrystalline sample. Temperature dependence of resistivity shows a metal-insulator transition at transition temperature Tρ. A hysteretic behavior is observed for zero field resistivity curves with Tρ = 128 K on cooling process and Tρ = 136 K on warming process. Zero field resistivity curves follow Zener polynomial law in the metallic phase with unusual n exponent value ∼9. Presence of resistivity minimum at low temperatures has been ascribed to the coulombic electron-electron scattering process. Resistivity modification due to the magnetic field cycling testifies the presence of the training effect. Magnetization and resistivity appear to be highly correlated. Magnetoresistive study reveals colossal values of negative magnetoresistance reaching about 75% at 132 K under only 2T applied field. Colossal values of magnetoresistance suggest the possibility of using this sample for magnetic field sensing and spintronic applications.

Evolution of magnetooptical and transport properties of La1- x Ag x MnO3 films depending on silver concentration

NASA Astrophysics Data System (ADS)

Sukhorukov, Yu. P.; Gan'shina, E. A.; Loshkareva, N. N.; Kaul, A. R.; Gorbenko, O. Yu.; Telegin, A. V.; Tugushev, S. N.; Mel'Nikov, O. V.; Vinogradov, A. N.

2007-04-01

Evolution of optical, magnetooptical, and transport properties of La1- x Ag x MnO3/SrTiO3 epitaxial films depending on the silver concentration ( x = 0.05, 0.10, 0.15, and 0.25) is studied. The highest values of the Curie temperature ( T C ≈ 317 K), magnetoresistance (˜16%), magnetotransmission (˜8%), and transverse Kerr effect (δ ˜ 20 × 10-3) are attained for a concentration x = 0.10 of Ag+ ions. Comparison of the temperature dependences of the transmission of IR radiation, resistivity, magnetotransmission, magnetoresistance, and Kerr effect indicates electronic and magnetic inhomogeneity of the films in spite of saturation of films with silver. This feature of the film state is explained using the concepts of epitaxial stresses and metastable point defects.

Spin fluctuation induced linear magnetoresistance in ultrathin superconducting FeSe films

DOE PAGES

Wang, Qingyan; Zhang, Wenhao; Chen, Weiwei; ...

2017-07-21

The discovery of high-temperature superconductivity in FeSe/STO has trigged great research interest to reveal a range of exotic physical phenomena in this novel material. Here we present a temperature dependent magnetotransport measurement for ultrathin FeSe/STO films with different thickness and protection layers. Remarkably, a surprising linear magnetoresistance (LMR) is observed around the superconducting transition temperatures but absent otherwise. The experimental LMR can be reproduced by magnetotransport calculations based on a model of magnetic field dependent disorder induced by spin fluctuation. Thus, the observed LMR in coexistence with superconductivity provides the first magnetotransport signature for spin fluctuation around the superconducting transitionmore » region in ultrathin FeSe/STO films.« less

Spin-flop states in a synthetic antiferromagnet and variations of unidirectional anisotropy in FeMn-based spin valves

NASA Astrophysics Data System (ADS)

Milyaev, M. A.; Naumova, L. I.; Chernyshova, T. A.; Proglyado, V. V.; Kulesh, N. A.; Patrakov, E. I.; Kamenskii, I. Yu.; Ustinov, V. V.

2016-12-01

Spin valves with a synthetic antiferromagnet have been prepared by magnetron sputtering. Regularities of the formation of single- and two-phase spin-flop states in the synthetic antiferromagnet have been studied using magnetoresistance measurements and imaging the magnetic structure. A thermomagnetic treatment of spin valve in a field that corresponds to the single-phase spin-flop state of synthetic antiferromagnet was shown to allow us to obtain a magnetically sensitive material characterized by hysteresis-free field dependence of the magnetoresistance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haidar, S. M., E-mail: haidar@imr.tohoku.ac.jp; Iguchi, R.; Yagmur, A.

We have investigated dc voltage generation induced by ferromagnetic resonance in a Co{sub 75}Fe{sub 25}/Pt film. In order to reduce rectification effects of anisotropic magnetoresistance and the planar Hall effect, which may be observed simultaneously with the inverse spin Hall effect, we selected Co{sub 75}Fe{sub 25} with extremely small anisotropic magnetoresistance as a spin injector. Using the difference in the spectral shape of voltage and in the angle dependence of in-plane magnetization among the effects, we demonstrated that the generated dc voltage is governed by the inverse spin Hall effect induced by spin pumping.

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

NASA Astrophysics Data System (ADS)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

On the development of a magnetoresistive sensor for blade tip timing and blade tip clearance measurement systems

NASA Astrophysics Data System (ADS)

Tomassini, R.; Rossi, G.; Brouckaert, J.-F.

2014-05-01

The accurate control of the gap between static and rotating components is vital to preserve the mechanical integrity and ensure a correct functioning of any rotating machinery. Moreover, tip leakage above the airfoil tip results in relevant aerodynamic losses. One way to measure and to monitor blade tip gaps is by the so-called Blade Tip Clearance (BTC) technique. Another fundamental phenomenon to control in the turbomachines is the vibration of the blades. For more than half a century, this has been performed by installing strain gauges on the blades and using telemetry to transmit the signals. The Blade Tip Timing (BTT) technique, (i.e. measuring the blade time of arrival from the casing at different angular locations with proximity sensors) is currently being adopted by all manufacturers as a replacement for the classical strain gauge technique because of its non-intrusive character. This paper presents a novel magnetoresistive sensor for blade tip timing and blade tip clearance systems, which offers high temporal and high spatial resolution simultaneously. The sensing element adopted is a Wheatstone bridge of Permalloy elements. The principle of the sensor is based on the variation of magnetic field at the passage of ferromagnetic objects. Two different configurations have been realized, a digital and an analogue sensor. Measurements of tip clearance have been performed in an high speed compressor and the calibration curve is reported. Measurements of blade vibration have been carried out in a dedicated calibration bench; results are presented and discussed. The magnetoresistive sensor is characterized by high repeatability, low manufacturing costs and measurement accuracy in line with the main probes used in turbomachinery testing. The novel sensor has great potential and is capable of fulfilling the requirements for a simultaneous BTC and BTT measurement system.

Butterfly magnetoresistance, quasi-2D Dirac Fermi surface and topological phase transition in ZrSiS

PubMed Central

Ali, Mazhar N.; Schoop, Leslie M.; Garg, Chirag; Lippmann, Judith M.; Lara, Erik; Lotsch, Bettina; Parkin, Stuart S. P.

2016-01-01

Magnetoresistance (MR), the change of a material’s electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. We report the observation of an unusual “butterfly”-shaped titanic angular magnetoresistance (AMR) in the nonmagnetic Dirac material, ZrSiS, which we find to be the most conducting sulfide known, with a 2-K resistivity as low as 48(4) nΩ⋅cm. The MR in ZrSiS is large and positive, reaching nearly 1.8 × 105 percent at 9 T and 2 K at a 45° angle between the applied current (I || a) and the applied field (90° is H || c). Approaching 90°, a “dip” is seen in the AMR, which, by analyzing Shubnikov de Haas oscillations at different angles, we find to coincide with a very sharp topological phase transition unlike any seen in other known Dirac/Weyl materials. We find that ZrSiS has a combination of two-dimensional (2D) and 3D Dirac pockets comprising its Fermi surface and that the combination of high-mobility carriers and multiple pockets in ZrSiS allows for large property changes to occur as a function of angle between applied fields. This makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons as well as opens the door to creating devices focused on switching between different parts of the Fermi surface and different topological states. PMID:28028541

Low-temperature magnetotransport of the narrow-gap semiconductor FeSb2

NASA Astrophysics Data System (ADS)

Takahashi, H.; Okazaki, R.; Yasui, Y.; Terasaki, I.

2011-11-01

We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a large Seebeck coefficient was observed. By applying a two-carrier model, we find that the carrier concentration decreases from 1 down to 10-4 ppm/unit cell and the mobility increases from 2000 to 28 000 cm2/Vs with decreasing temperature from 30 down to 4 K. At lower temperatures, the magnetoresistive behavior drastically changes and a negative magnetoresistance is observed at 3 K. These low-temperature behaviors are reminiscent of the low-temperature magnetotransport observed in doped semiconductors such as As-doped Ge, which is well described by a weak-localization picture. We argue a detailed electronic structure in FeSb2 inferred from our observations.

Crossover from weak to strong localization in quasi-1D = conductors.

NASA Astrophysics Data System (ADS)

Gershenson, M. E.; Khavin, Y. B.; Mikhalchuk, A. G.; Bozler, H. M.; Bogdanov, A. L.

1997-03-01

A crossover from weak localization (WL) to strong localization (SL) with decreasing temperature has been observed in the resistance of quasi-1D channels in Si delta-doped GaAs structures. The crossover occurs when the phase-breaking length becomes comparable to the localization length. In the SL regime, an activation temperature dependence R(T) is observed. The activation energy is very close to the spacing between the energy levels of the localized electrons within the localization domain. The activation energy decreases by half in strong magnetic fields, as a result, an exponentially strong negative magnetoresistance is developed. All the features of the magnetoresistance in the SL regime are in good agreement with the theory of doubling of the localization length in quasi-1D conductors in strong fields. The magnetoresistance provides a direct measurement of the localization length. Supported by RNFBR, INTAS 943862, and NSF DRM-9623716 (A.G.M. and H.M.B.)

Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid

NASA Astrophysics Data System (ADS)

Shang, T.; Zhan, Q. F.; Ma, L.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Li, H. H.; Liu, L. P.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

2015-12-01

We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y3Fe5O12 (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magne toresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

PubMed

Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

2017-10-26

The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

Effect of pressure and magnetic field on the electrical resistivity of TbB6

NASA Astrophysics Data System (ADS)

Sakai, Takeshi; Oomi, Gendo; Kunii, Satoru

2009-06-01

Electrical resistivity of a single crystal of TbB6 was studied under hydrostatic pressures up to 2.1 GPa and magnetic fields up to 9 T. The Néel temperature, rN, decreases linearly with increasing pressure: \\ddiff lnTN/\\ddiff P = 3.14×10-2 GPa-1 at zero external field. This pressure dependence of TN weakens as external fields increase. At ambient pressure, the magnetoresistance at 4.2 K is positive up to 4.8 T and becomes negative above 4.8 T. The positive magnetoresistance observed at ambient pressure is suppressed by applying pressure, which enhances the negative magnetoresistance. These results are interpreted in terms of the reduction of the scattering of conduction electrons, due to disordered magnetic moment being suppressed by derealization of 4f electrons at high pressure, and the magnetic field variation of the large transition probability between the ground state and the excited levels.

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

NASA Astrophysics Data System (ADS)

Althammer, Matthias; Mishra, Rohan; Borisevich, Albina J.; Singh, Amit Vikam; Keshavarz, Sahar; Yurtisigi, Mehmet Kenan; Leclair, Patrick; Gupta, Arunava

We experimentally investigate the structural, magnetic and electrical transport properties of La0.67Sr0.33MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T = 5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. Our results suggest that by reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future. We gratefully acknowledge financial support via NSF-ECCS Grant No. 1509875.

Effects of Nb doping level on the electronic transport, photoelectric effect and magnetoresistance across La0.5Ca0.5MnO3/Nb:SrTiO3 junctions

NASA Astrophysics Data System (ADS)

Wang, J. F.; Jiang, Y. C.; Chen, M. G.; Gao, J.

2013-12-01

Heterojunctions composed of La0.5Ca0.5MnO3 and Nb doped SrTiO3 were fabricated, and the effects of the Nb doping level on their electronic transport, photoelectric effect, and magnetoresistance were investigated. A lower doping concentration of Nb led to better rectifying properties and higher open circuit voltages. The I-V curves for La0.5Ca0.5MnO3/0.7 wt. % Nb-SrTiO3 showed a negligible response to magnetic fields for all temperatures, whereas La0.5Ca0.5MnO3/0.05 wt. % Nb-SrTiO3 exhibited distinct magnetoresistance, which depended on both the bias voltage and temperature. These results are discussed with the assistance of conventional semiconductor theories.

Low temperature resistivity plateau and non-saturating magnetoresistance in Type-II Weyl semimetal WP2

NASA Astrophysics Data System (ADS)

Nagpal, V.; Kumar, P.; Sudesh, Patnaik, S.

2018-04-01

We have studied the resistivity and magnetoresistance (MR) properties of the recently predicted type-II Weyl semimetal WP2. Polycrystalline WP2 is synthesized using solid state reaction and crystallizes in an orthorhombic structure with the Cmc21 spacegroup. The temperature dependent resistivity is enhanced with the application of magnetic field and a resistivity plateau is observed at low temperatures. We find a small dip in resistivity around 30K at 5T field suggesting that there might be a metal-insulator-like transition at higher magnetic fields. A non-saturating magnetoresistance is observed at low temperatures with maximum MR ˜ 94% at 2K and 6T. The value of MR decreases with the increase in temperature. We see a deviation from Kohler's power law which implies that the system comprises of two types of charge carriers.

Negative Magnetoresistance in Viscous Flow of Two-Dimensional Electrons.

PubMed

Alekseev, P S

2016-10-14

At low temperatures, in very clean two-dimensional (2D) samples, the electron mean free path for collisions with static defects and phonons becomes greater than the sample width. Under this condition, the electron transport occurs by formation of a viscous flow of an electron fluid. We study the viscous flow of 2D electrons in a magnetic field perpendicular to the 2D layer. We calculate the viscosity coefficients as the functions of magnetic field and temperature. The off-diagonal viscosity coefficient determines the dispersion of the 2D hydrodynamic waves. The decrease of the diagonal viscosity in magnetic field leads to negative magnetoresistance which is temperature and size dependent. Our analysis demonstrates that this viscous mechanism is responsible for the giant negative magnetoresistance recently observed in the ultrahigh-mobility GaAs quantum wells. We conclude that 2D electrons in those structures in moderate magnetic fields should be treated as a viscous fluid.

Negative Magnetoresistance in Viscous Flow of Two-Dimensional Electrons

NASA Astrophysics Data System (ADS)

Alekseev, P. S.

2016-10-01

At low temperatures, in very clean two-dimensional (2D) samples, the electron mean free path for collisions with static defects and phonons becomes greater than the sample width. Under this condition, the electron transport occurs by formation of a viscous flow of an electron fluid. We study the viscous flow of 2D electrons in a magnetic field perpendicular to the 2D layer. We calculate the viscosity coefficients as the functions of magnetic field and temperature. The off-diagonal viscosity coefficient determines the dispersion of the 2D hydrodynamic waves. The decrease of the diagonal viscosity in magnetic field leads to negative magnetoresistance which is temperature and size dependent. Our analysis demonstrates that this viscous mechanism is responsible for the giant negative magnetoresistance recently observed in the ultrahigh-mobility GaAs quantum wells. We conclude that 2D electrons in those structures in moderate magnetic fields should be treated as a viscous fluid.

Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhdanov, E. Yu., E-mail: zhdanov@isp.nsc.ru; Pogosov, A. G.; Budantsev, M. V.

2017-01-15

The magnetoresistance of suspended semiconductor nanostructures with a two-dimensional electron gas structured by periodic square antidot lattices is studied. It is shown that the ballistic regime of electron transport is retained after detaching the sample from the substrate. Direct comparative analysis of commensurability oscillations of magnetoresistance and their temperature dependences in samples before and after suspension is performed. It is found that the temperature dependences are almost identical for non-suspended and suspended samples, whereas significant differences are observed in the nonlinear regime, caused by direct current passage. Commensurability oscillations in the suspended samples are more stable with respect to exposuremore » to direct current, which can be presumably explained by electron–electron interaction enhancement after detaching nanostructures from the high-permittivity substrate.« less

Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES

DOE PAGES

Samaraweera, R. L.; Liu, H. -C.; Wang, Z.; ...

2017-07-11

Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetricallymore » with increasing I dc. Lastly, the results suggest the interpretation that the I dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.« less

Control of Low-Field Hysteresis Loop Shift of Spin Valves

NASA Astrophysics Data System (ADS)

Chernyshova, T. A.; Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Maksimova, I. K.; Pavlova, A. Yu.; Blagodatkov, D. V.; Ustinov, V. V.

2017-12-01

Spin valves that comprise synthetic antiferromagnet as a component of pinned layer and an exchange-coupled ferromagnet/Ru/ferromagnet structure in the free layer have been prepared by magnetron sputtering. Microobjects have been formed from spin valves by optical and electron-beam lithography. It has been shown that the shift of the low-field magnetoresistance hysteresis loop decreases as the thicknes of the Ru spacer in the free layer of spin valve increases. The almost hysteresis-free odd-field dependences of the magnetoresistance were obtained for micron-sized samples; in this case, the sensitivity is 0.2%/Oe.

Advanced experimental study on giant magnetoresistance of Fe/Cr superlattices by rf-sputtering

NASA Astrophysics Data System (ADS)

Obi, Y.; Takanashi, K.; Mitani, Y.; Tsuda, N.; Fujimori, H.

1992-02-01

The study on MagnetoResistance (MR) has been performed for the Fe/Cr SuperLattice (SL) produced by the rf-sputtering method. Especially the effect of the preparation condition on MR has been investigated in detail. The MR oscillates with respect to the Cr layer thickness ( tCr) as was reported by Parkin et al. [1]. The characteristic experimental results is that the MR depends strongly on the Ar pressure. This indicates that the size of the MR is greatly affected by the interface roughness of the SL induced by the different Ar pressure during sputtering.

Tunneling anisotropic magnetoresistance driven by resonant surface states: first-principles calculations on an Fe(001) surface.

PubMed

Chantis, Athanasios N; Belashchenko, Kirill D; Tsymbal, Evgeny Y; van Schilfgaarde, Mark

2007-01-26

Fully relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes. We find that spin-flip scattering at the interface is controlled not only by the strength of the spin-orbit coupling, but depends strongly on the intrinsic width of the resonant surface states.

Current-perpendicular-to-the-plane magnetoresistance from large interfacial spin-dependent scattering between Co{sub 50}Fe{sub 50} magnetic layer and In-Zn-O conductive oxide spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakatani, T. M., E-mail: Tomoya.Nakatani@hgst.com; Childress, J. R.

2015-06-28

We have investigated electrically conductive indium-zinc-oxide (IZO) deposited by magnetron sputtering as spacer layer for current-perpendicular-to-the-plane giant magnetoresistance sensor devices. Spin-valves with a Co{sub 50}Fe{sub 50}/IZO/Co{sub 50}Fe{sub 50} trilayer showed resistance-area product (RA) ranging from 110 to 250 mΩ μm{sup 2}, significantly larger than all-metal structures with Ag or Cu spacers (∼40 mΩ μm{sup 2}). Magnetoresistance ratios (ΔR/R) of 2.5% to 5.5% depending on the IZO spacer thickness (1.5–6.0 nm), corresponding to ΔRA values from 3 to 13 mΩ μm{sup 2}, were obtained. The values of ΔRA with the IZO spacers and Co{sub 50}Fe{sub 50} magnetic layers were significantly larger than thosemore » with conventional metal spacers and Co{sub 50}Fe{sub 50} magnetic layers (∼1–2 mΩ μm{sup 2}). The dependence of ΔRA on the magnetic layer thickness suggests that the larger ΔRA obtained with IZO spacer is due to a large interfacial spin-dependent scattering caused by the large specific resistance at the Co{sub 50}Fe{sub 50}/IZO interface. From structural characterization by TEM and the observed dependence of the RA dispersion on device size, the electric current flowing through the IZO spacer is thought to be laterally uniform, similar to normal metal spacers.« less

Magnetotransport and Heat Capacity in Ternary Compounds U3M2M‧3‧, M=Al, Ga; M=Si, Ge

NASA Astrophysics Data System (ADS)

Troć, R.; Rogl, P.; Tran, V. H.; Czopnik, A.

2001-05-01

We report detailed studies of magnetization, electrical resistivity, magnetoresistivity, and heat capacity performed on the novel family of intermetallic compounds U3M2M‧3, (M=Al, Ga, and M‧=Si, Ge). The present measurements support the earlier conclusions about the ferrimagnetic properties of silicides and ferromagnetic properties of germanides. The resistivity for both compounds U3{Al,Ga}2Si3 exhibits below TC a pronounced maximum observed for the first time in an actinoid-ferrimagnet, probably caused by (a) the reduction of the number of effective conduction carriers or (b) a SDW-type of spin-disorder scattering of electrons. Both low-temperature resistivity (except for U3Ga2Si3) and heat capacity may be described by a T-dependence involving a small gap Δ on the order of 30-50 K in the magnon dispersion. The Cp/T values at 2 K are enhanced and point to a medium-heavy fermion character of all these ternaries. Magnetoresistance for ferrimagnetic U3{Al,Ga}2Si3 is rather small but positive in correspondence of antiferromagnetic interactions. In correspondence to the ferromagnetic materials, negative magnetoresistance is encountered for U3{Al,Ga}2Ge3. Specific features in the temperature dependence of magnetoresistivity Δρ/ρ at various fields confirm the sinusoidal modulation of the magnetic structure for U3Al2Ge3 between 40 and 60 K. Also, such data for U3Ga2Ge3 present strong indications for a similar magnetic modulation between 63 and 93 K, yet to be discovered by neutron diffraction experiments. In addition, the transition at 63 K is furthermore well resolved in the specific heat data of U3Ga2Ge3.

Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasai, S.; Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198; Takahashi, Y. K.

2016-07-18

We investigated the structure and magneto-transport properties of magnetic junctions using a Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy as ferromagnetic electrodes and a Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm{sup 2}. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

Variable-range-hopping magnetoresistance

NASA Astrophysics Data System (ADS)

Azbel, Mark Ya

1991-03-01

The hopping magnetoresistance R of a two-dimensional insulator with metallic impurities is considered. In sufficiently weak magnetic fields it increases or decreases depending on the impurity density n: It decreases if n is low and increases if n is high. In high magnetic fields B, it always exponentially increases with √B . Such fields yield a one-dimensional temperature dependence: lnR~1/ √T . The calculation provides an accurate leading approximation for small impurities with one eigenstate in their potential well. In the limit of infinitesimally small impurities, an impurity potential is described by a generalized function. This function, similar to a δ function, is localized at a point, but, contrary to a δ function in the dimensionality above 1, it has finite eigenenergies. Such functions may be helpful in the study of scattering and localization of any waves.

Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, June-Young; Park, Byong-Guk, E-mail: bgpark@kaist.ac.kr; Baek, Seung-heon Chris

We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low magnetic field, which is due to the precession of injected spins, and another signal originating from the rotation of the magnetization at a larger magnetic field. In contrast, for a small bias voltage, additional signals appear at a wide range of magnetic fields, which occasionally overwhelms the conventional Hanle signals. Because the additional signals are pronounced atmore » a low bias and are significantly reduced by annealing at moderate temperatures, they can be attributed to multi-step tunneling via defect states at the interfaces or tunnel barrier. Our results demonstrate that the spin injection signal caused by the defect states can be evaluated by its bias voltage dependence.« less

Linear magneto-resistance in Bi{sub 2}SeTe{sub 2} topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaladass, E. P., E-mail: edward@igcar.gov.in; Sharma, Shilpam; Devidas, T. R.

2016-05-23

Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi{sub 2}SeTe{sub 2} topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5 T 5 T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200 K), a parabolic MR is observed. Temperaturemore » dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.« less

Particle size dependence on magnetic and electrical properties of (Ni0.8Fe0.2)10C90 granular composites.

PubMed

Mandal, Guruprasad; Srinivas, V; Rao, V V

2011-03-01

The granular structure and electrical transport behavior of ball milled magnetic permalloy particles and graphite forming (Ni0.8Fe0.2)10C90 granular composites have been reported. Retaining the composite composition to be 90:10 and varying the particle size of permalloy, the electronic transport properties have been carried out down to 4 K under the external applied magnetic field of 50 kOe. All the samples show semiconducting like behavior and positive magnetoresistance (MR) in the temperature range 4-300 K. A strong anisotropic magnetoresistance in these samples has also been observed. The highest 31% longitudinal and 6.8% transverse magnetoresistance values have been observed in 40 hrs ball milled (Ni0.8Fe0.2)10C90 composite. From these studies, we suggest that the magnetic component present in the sample may not be playing a major role in obtaining large positive MR values, which is in deviation with the earlier reports.

Negative magnetoresistance of ultra-narrow superconducting nanowires in the resistive state

NASA Astrophysics Data System (ADS)

Arutyunov, K. Yu.

2008-02-01

We present a phenomenological model that qualitatively explains negative magnetoresistance in quasi-one-dimensional superconducting channels in the resistive state. The model is based on the assumption that fluctuations of the order parameter (phase slips) are responsible for the finite effective resistance of a narrow superconducting wire sufficiently close to the critical temperature. Each fluctuation is accompanied by an instantaneous formation of a quasi-normal region, of the order of the non-equilibrium quasiparticle relaxation length, ‘pinned’ to the core of the phase slip. The effective time-averaged voltage measured in experiments is a sum of two terms. The first is the conventional contribution associated with the rate of the fluctuations via the Josephson relation. The second term is the Ohmic contribution of this quasi-normal region. Depending on the material properties of the wire, there might be a range of magnetic fields where the first term is not significantly affected, while the second term is effectively suppressed, contributing to the experimentally observed negative magnetoresistance.

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Althammer, Matthias; Bavarian Academy of Sciences and Humanities; Vikam Singh, Amit

In this paper, we experimentally investigate the structural, magnetic, and electrical transport properties of La 0.67 Sr 0.33MnO 3 based magnetic tunnel junctions with a SrSnO 3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO 3 barrier, reaching values of up to 350% at T = 5K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease ofmore » the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200K. Finally, our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.« less

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

DOE PAGES

Althammer, Matthias; Bavarian Academy of Sciences and Humanities; Vikam Singh, Amit; ...

2016-12-16

In this paper, we experimentally investigate the structural, magnetic, and electrical transport properties of La 0.67 Sr 0.33MnO 3 based magnetic tunnel junctions with a SrSnO 3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO 3 barrier, reaching values of up to 350% at T = 5K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease ofmore » the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200K. Finally, our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.« less

Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jiamin; Hono, K., E-mail: kazuhiro.hono@nims.go.jp; Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-2-1, Sengen, Tsukuba 305-0047

2015-05-07

We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (112{sup ¯}0) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation,more » which made it a good candidate for CPP-GMR device.« less

Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet.

PubMed

Ulloa, Camilo; Duine, R A

2018-04-27

Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet

NASA Astrophysics Data System (ADS)

Ulloa, Camilo; Duine, R. A.

2018-04-01

Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

Charge and spin transport in metal-graphene-metal vertical junctions

NASA Astrophysics Data System (ADS)

Cobas, Enrique; van't Erve, Olaf; Cheng, Shu-Fan; Culbertson, James; Jernigan, Glenn; Bussman, Konrad; Jonker, Berry

We observe negative magnetoresistance(MR) in metallic NiFe(111)|multi-layer graphene|Fe heterostructures consistent with minority spin filtering. The MR is -5 percent at room temperature and -12 percent at 10 K. The transport properties and temperature dependence are metallic. We further investigate the out-of-plane (c-axis) resistivity and magnetoresistance of multi-layer graphene between metal surfaces. We fabricate various metal-graphene-metal vertical heterostructures via chemical vapor deposition directly on lattice-matched crystalline metal films including NiFe(111) and Co(0002) and in-situ electron beam evaporation of NiFe, Co, Ni, Fe, Cu and Au.

Ballistic anisotropic magnetoresistance in core-shell nanowires and rolled-up nanotubes

NASA Astrophysics Data System (ADS)

Chang, Ching-Hao; Ortix, Carmine

2017-01-01

In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic conductance has been predicted to occur in a number of newly synthesized nonmagnetic semiconducting nanostructures subject to externally applied magnetic fields, without necessitating spin-orbit coupling. In this paper, we review past works on the prediction of this BAMR effect in core-shell nanowires (CSN) and rolled-up nanotubes (RUNTs). This is complemented by new results, we establish for the transport properties of tubular nanosystems subject to external magnetic fields.

Spin-dependent transport in antiferromagnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Merodio, P.; Kalitsov, A.; Béa, H.; Baltz, V.; Chshiev, M.

2014-09-01

We investigate the behaviour of spin transfer torque (STT) and tunnelling magnetoresistance (TMR) in epitaxial antiferromagnetic-based tunnel junctions using tight binding calculations in the framework of the Keldysh formalism. We find that the STT out-of-plane component exhibits a staggered spatial distribution similar to its in-plane component. This behaviour is specific to the use of a tunnel barrier and significantly differs from the out-of-plane torques reported in previous works using a metallic spacer. Additionally, we show that unlike conventional ferromagnetic-based tunnel junctions, the TMR can increase with applied bias and reach values comparable to typical magnetoresistances found for usual spin valves.

Some magnetic and magnetoresistive properties of RF-sputtered thin NiFe-Si films.

NASA Astrophysics Data System (ADS)

Vatskicheva, M.; Vatskichev, Ly.; Dimitrov, I.; Kunev, B.

The galvanomagnetic properties and some structural peculiarities of rf-sputtered alloy films (NI80Fe20)100-xSix at 0 < x < 30 at. % were studied and compared with the corresponding properties of evaporated films of the same thickness and composition. The content of silicon increased with the increasing of the velocity of deposition and led to the amorphousation of the films. Coercivity decreased with the velocity of growth but it did not depend on the thickness and on the velocity of film deposition. The magnetoresistance ratio Dr/r of the sputtered films was about three times higher then that of the evaporated films.

Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

NASA Astrophysics Data System (ADS)

Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance

NASA Astrophysics Data System (ADS)

He, Jiaming; Zhang, Yiran; Wen, Libin; Yang, Yusen; Liu, Jinyu; Wu, Yueshen; Lian, Hailong; Xing, Hui; Wang, Shun; Mao, Zhiqiang; Liu, Ying

2017-07-01

Ta2NiSe7 is a quasi-one-dimensional (quasi-1D) transition-metal chalcogenide with Ta and Ni chain structures. An incommensurate charge-density wave (CDW) in this quasi-1D structure was well studied previously using tunnelling spectrum, X-ray, and electron diffraction, whereas its transport property and the relation to the underlying electronic states remain to be explored. Here, we report our results of the magnetoresistance (MR) on Ta2NiSe7. A breakdown of Kohler's rule is found upon entering the CDW state. Concomitantly, a clear change in curvature in the field dependence of MR is observed. We show that the curvature change is well described by the two-band orbital MR, with the hole density being strongly suppressed in the CDW state, indicating that the p orbitals from Se atoms dominate the change in transport through CDW transition.

The dependence of nano-contact magnetoresistance on the bulk scattering spin asymmetry in CoFe alloys with oxidation impurities

NASA Astrophysics Data System (ADS)

Shiokawa, Yohei; Jung, JinWon; Otsuka, Takahiko; Sahashi, Masashi

2015-08-01

Nano-contact magnetoresistance (NCMR) spin-valves (SVs) using an AlOx nano-oxide-layer (NOL) have numerous nanocontacts in the thin AlOx oxide layer. The NCMR theoretically depends on the bulk scattering spin asymmetry ( β) of the ferromagnetic material in the nanocontacts. To determine the relationship between NCMR and β, we investigated the dependence of NCMR on the composition of the ferromagnetic material Co1-xFex. The samples were annealed at 270 °C and 380 °C to enhance the MR ratio. For both annealing temperatures, the magnetorsistance ratio in the low-resistance area product region at less than 1 Ω μm2 was maximized for Co0.5Fe0.5. To evaluate β exactly, we fabricated current-perpendicular-to-plane giant magnetoresistance SVs with Co1-xFex/Cu/Co1-xFex layers and used Valet and Fert's theory to solve the diffusion equation of the spin accumulation for a ferromagnetic layer/non-ferromagnetic layer of five layers with a finite diffusion length. The evaluated β for Co1-xFex was also maximized for Co0.5Fe0.5. Additionally, to determine the difference between the experimental MR ratio of NCMR SVs and the theoretical MR ratio, we fabricated Co0.5Fe0.5 with oxygen impurities and estimated the decrease in β with increasing oxygen impurity concentration. Our Co0.5Fe0.5 nano-contacts fabricated using ion-assisted oxidation may contain oxygen impurities, and the oxygen impurities might cause a decrease in β and the MR ratio.

SU-E-T-472: Improvement of IMRT QA Passing Rate by Correcting Angular Dependence of MatriXX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Q; Watkins, W; Kim, T

2015-06-15

Purpose: Multi-channel planar detector arrays utilized for IMRT-QA, such as the MatriXX, exhibit an incident-beam angular dependent response which can Result in false-positive gamma-based QA results, especially for helical tomotherapy plans which encompass the full range of beam angles. Although MatriXX can use with gantry angle sensor to provide automatically angular correction, this sensor does not work with tomotherapy. The purpose of the study is to reduce IMRT-QA false-positives by correcting for the MatriXX angular dependence. Methods: MatriXX angular dependence was characterized by comparing multiple fixed-angle irradiation measurements with corresponding TPS computed doses. For 81 Tomo-helical IMRT-QA measurements, two differentmore » correction schemes were tested: (1) A Monte-Carlo dose engine was used to compute MatriXX signal based on the angular-response curve. The computed signal was then compared with measurement. (2) Uncorrected computed signal was compared with measurements uniformly scaled to account for the average angular dependence. Three scaling factor (+2%, +2.5%, +3%) were tested. Results: The MatriXX response is 8% less than predicted for a PA beam even when the couch is fully accounted for. Without angular correction, only 67% of the cases pass the >90% points γ<1 (3%, 3mm). After full angular correction, 96% of the cases pass the criteria. Of three scaling factors, +2% gave the highest passing rate (89%), which is still less than the full angular correction method. With a stricter γ(2%,3mm) criteria, the full angular correction method was still able to achieve the 90% passing rate while the scaling method only gives 53% passing rate. Conclusion: Correction for the MatriXX angular dependence reduced the false-positives rate of our IMRT-QA process. It is necessary to correct for the angular dependence to achieve the IMRT passing criteria specified in TG129.« less

Measures and models for angular correlation and angular-linear correlation. [correlation of random variables

NASA Technical Reports Server (NTRS)

Johnson, R. A.; Wehrly, T.

1976-01-01

Population models for dependence between two angular measurements and for dependence between an angular and a linear observation are proposed. The method of canonical correlations first leads to new population and sample measures of dependence in this latter situation. An example relating wind direction to the level of a pollutant is given. Next, applied to pairs of angular measurements, the method yields previously proposed sample measures in some special cases and a new sample measure in general.

Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Hu, Chengqing; Park, Keun Woo; Posadas, Agham; Jordan-Sweet, Jean L.; Demkov, Alexander A.; Yu, Edward T.

2013-11-01

A LaCoO3/SrTiO3 heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO3, leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO3 layer on strain. Below the Curie temperature of the LaCoO3 layer, this effect leads to modulation of resistance in LaCoO3 as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO3. Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO3 layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO3 grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device.

Separation of electron and hole dynamics in the semimetal LaSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, F.; Xu, J.; Botana, A. S.

We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov–de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first-principles calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence.We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strongmore » magnetic-field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multiband materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.« less

The Influence of Layer Thickness-Ratio on Magnetoresistance in La2/3Ca1/3MnO3/La1/3Ca2/3MnO3 Exchange Biased System

NASA Astrophysics Data System (ADS)

Gomez, Maria Elena; Milena Diez, Sandra; Cuartas, Lina Maria; Marin, Lorena; Prieto, Pedro

2012-02-01

Isothermal magnetic field dependence of the resistance in La2/3Ca1/3MnO3 (F-LCMO)/ La1/3Ca2/3MnO3(AF-LCMO) bilayer and AF-LCMO/F-LCMO/AF-LCMO trilayer at temperatures below N'eel temperature of the antiferromagnetic layer were carried out to study the thickness layers influence on magneto transport properties. We grew multilayers using a high oxygen pressure sputtering technique. We systematically varied the thickness of the F-LCMO layer, tF, maintaining constant the thickness of the AF-LCMO layer, tAF. We studied the influence of the thickness ratio tF/tAF on the ZFC and FC magnetoresistance (MR) loops. HFC was varied from 100 Oe to 400 Oe. We found that MR has hysteretic behavior as observed in [La2/3Ca1/3MnO3/La1/3Ca2/3MnO3]N superlattices, where MR increases with the increasing field from H=0 to a maximum and then it decreases continuously. The position and magnitude of the maximum is not symmetric with respect to the axis H=0 for both FC and ZFC loops. We found that magnetoresistance behavior of the bilayer and trilayer is thickness-ratio dependent for both ZFC and FC loops.

A High-Spin Rate Measurement Method for Projectiles Using a Magnetoresistive Sensor Based on Time-Frequency Domain Analysis.

PubMed

Shang, Jianyu; Deng, Zhihong; Fu, Mengyin; Wang, Shunting

2016-06-16

Traditional artillery guidance can significantly improve the attack accuracy and overall combat efficiency of projectiles, which makes it more adaptable to the information warfare of the future. Obviously, the accurate measurement of artillery spin rate, which has long been regarded as a daunting task, is the basis of precise guidance and control. Magnetoresistive (MR) sensors can be applied to spin rate measurement, especially in the high-spin and high-g projectile launch environment. In this paper, based on the theory of a MR sensor measuring spin rate, the mathematical relationship model between the frequency of MR sensor output and projectile spin rate was established through a fundamental derivation. By analyzing the characteristics of MR sensor output whose frequency varies with time, this paper proposed the Chirp z-Transform (CZT) time-frequency (TF) domain analysis method based on the rolling window of a Blackman window function (BCZT) which can accurately extract the projectile spin rate. To put it into practice, BCZT was applied to measure the spin rate of 155 mm artillery projectile. After extracting the spin rate, the impact that launch rotational angular velocity and aspect angle have on the extraction accuracy of the spin rate was analyzed. Simulation results show that the BCZT TF domain analysis method can effectively and accurately measure the projectile spin rate, especially in a high-spin and high-g projectile launch environment.

Fabrication and local laser heating of freestanding Ni{sub 80}Fe{sub 20} bridges with Pt contacts displaying anisotropic magnetoresistance and anomalous Nernst effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brandl, F.; Grundler, D., E-mail: grundler@ph.tum.de

2014-04-28

In spin caloritronics, ferromagnetic samples subject to relatively large in-plane temperature gradients ∇T have turned out to be extremely interesting. We report on a preparation technique that allows us to create freely suspended permalloy/Pt hybrid structures where a scanning laser induces ∇T on the order of a few K/μm. We observe both the anisotropic magnetoresistance at room temperature and the magnetic field dependent anomalous Nernst effect under laser heating. The technique is promising for the realization of device concepts considered in spin caloritronics based on suspended ferromagnetic nanostructures with electrical contacts.

Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Oogane, Mikihiko; McFadden, Anthony P.; Kota, Yohei; Brown-Heft, Tobias L.; Tsunoda, Masakiyo; Ando, Yasuo; Palmstrøm, Chris J.

2018-06-01

In this study, we systematically investigated the anisotropic magnetoresistance (AMR) effect in half-metallic Co2MnSi Heusler alloy films epitaxially grown by molecular beam epitaxy. The fourfold symmetric AMR was observed in the temperature range of 25–275 K. In addition, the films exhibited a marked change in twofold symmetric AMR below 100 K. This specific temperature dependence of the AMR effect in Co2MnSi films can be caused by the tetragonal crystal field because of the distortion of the lattice at low temperatures. The influence of tetragonal distortion on both the AMR effect and half-metallicity is also discussed by first-principles calculations.

Superconducting spin switch with infinite magnetoresistance induced by an internal exchange field.

PubMed

Li, Bin; Roschewsky, Niklas; Assaf, Badih A; Eich, Marius; Epstein-Martin, Marguerite; Heiman, Don; Münzenberg, Markus; Moodera, Jagadeesh S

2013-03-01

A theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport measurement in a EuS/Al/EuS structure, showing that an infinite magnetoresistance can be produced by tuning the internal exchange field at the FI/S interface. This proximity effect at the interface can be suppressed by an Al(2)O(3) barrier as thin as 0.3 nm, showing the extreme confinement of the interaction to the interface giving rise to the demonstrated phenomena.

Out of plane magnetoresistance of organic superconductors; κ-(BEDT)2 salts

NASA Astrophysics Data System (ADS)

Maki, Kazumi; Won, Hye Kyung

1998-03-01

It is well documented that the out of plane manetoresistances of κ-(BEDT)_2X with X=Cu(NCS)2 and Cu[N(Cu)_2]Br exhibit a sharp peak before disappearance in the superconducting state (H. Ito et al. J. of Superconductivity 7), 667 (1994). ^, (M. V. Kartsovnik, (private communication).). We analyze this feature in terms of the superconducting fluctuation. Indeed, generalizing the formula for the clean limit (V. V. Dorin et al. Phys. Rev. B 48), 12951 (1993)., the superconducting fluctuation accounts for both the field and the temperature dependence of the magnetoresistance. In this description, d-wave nature of the superconducting order parameter in organic superconductors is crucial.

Nonmonotonic and anisotropic magnetoresistance effect in antiferromagnet CaMn2Bi2

NASA Astrophysics Data System (ADS)

Kawaguchi, N.; Urata, T.; Hatano, T.; Iida, K.; Ikuta, H.

2018-04-01

We found a large and unique magnetoresistance (MR) effect for CaMn2Bi2 . When the magnetic field was applied along the crystallographic c axis at low temperatures, the resistivity increased with the magnetic field and the MR ratio reached several hundred percent, but then it decreased with further increasing the applied field. In addition, the angle dependence measurement revealed a strong anisotropy. This compound is an antiferromagnetic semiconductor with a narrow band gap, and Mn atoms form a corrugated honeycomb lattice. Therefore, a frustration among the magnetic moments is expected, and we propose that our observations can be understood by a nonmonotonic modulation of magnetic fluctuation under the magnetic field.

Shubnikov-de Haas Oscillations in LaTiO3/SrTiO3 Heterostructures

NASA Astrophysics Data System (ADS)

Veit, Michael; Ramshaw, Brad; Chan, Mun; Suzuki, Yuri

Emergent metallic behavior in heterostructures of the Mott insulator LaTiO3 and the band insulator SrTiO3 was observed for the first time more than a decade ago. It has often been compared to other oxide systems which have a two-dimensional Fermi surface, but there have been few studies probing the dimensionality of the metallicity in this system. We have studied the transport properties of thin films of LaTiO3 on SrTiO3 substrates. Our measurements have indicated that the entirety of the LaTiO3 film is conductive with an additional contribution near the interface. When the film thickness is on the order of 3-4 unit cells, we observe two sets of Shubnikov-de Haas oscillations - low frequency oscillations with a frequency of 2T and high frequency of 36T. We attribute the observation of these two sets of oscillations to a Rashba splitting which creates a smaller inner Fermi pocket and a larger outer Fermi pocket. These results are consistent with our measurements of in plane anisotropic magnetoresistance and a weak antilocalization correction to the magnetoconductance Further measurements on the angular dependence of the oscillations indicate that their frequency does not change, thus indicating that the Fermi surface is more three-dimensional.

Magnetotransport study of Dirac fermions in YbMnBi2 and CaMnBi2

NASA Astrophysics Data System (ADS)

Wang, Aifeng; Zaliznyak, Igor; Graf, David; Ren, Weijun; Wang, Kefeng; Wu, Lijun; Garlea, Ovidiu; Warren, John; Bozin, Emil; Zhu, Yimei; Petrovic, Cedomir

It is well known that AMnBi2 (A = alkaline earth) with two dimensional (2D) bismuth layer host quasi-2D Dirac states similar to graphene and topological insulators. The Dirac state is significantly affected by the alkaline earth in the block layer. Angle-resolved photoemission spectroscopy (ARPES) indicates that YbMnBi2 could be the first Weyl semimetal with time-reversal symmetry breaking, whereas the anisotropic Dirac state in SrMnBi2 can host a valley-polarized interlayer current through magnetic valley control. Here, we study in-plane magnetotransport in YbMnBi2, and interlayer magnetotransport in CaMnBi2. The angular-dependent magnetoresistance, nonzero Berry phase, and small cyclotron mass confirm the presence of Dirac fermion and quasi-2D fermi surface in YbMnBi2. The interlayer electronic transport in CaMnBi2 suggest valley polarized conduction and a Dirac state on the side wall of the warped cylindrical Fermi surface of CaMnBi2. Work at BNL was supported by the U.S. Department of Energy-BES, Division of Materials Science and Engineering, under Contract No. DE-SC0012704. Work at the National High Magnetic Field Laboratory is supported by the NSF Cooperative Agreement No. DMR-06541.

Quantum oscillations study of the type-II Weyl semimetal candidate β-MoTe2

NASA Astrophysics Data System (ADS)

Schoenemann, R.; Rhodes, D.; Zhou, Q.; Zhang, Q.; Das, S.; Manousakis, E.; Balicas, L.; Chang, J.; McCandless, G.; Kampert, E.; Shimura, Y.; Johannes, M.

Here we present a quantum oscillations study of high quality single crystalline β-MoTe2 samples that show residual resistivity ratios between 400 and 2000. We performed angular and temperature dependent Shubnikov-de Haas (SdH) and de Haas-van Alphen (dHVA) measurements and compared our results with bandstructure calculations. The magnetoresistivity shows no sign of saturation and reaches values of approximately 106 at 60 T and 1.7 K. Hall effect measurements indicate almost perfect electron-hole compensation at low temperatures. Additionally we were able to extract a non-trivial Berry Phase from dHvA measurements, i.e. between 2 π x 0.445 and 2 π x 0.475 which is close to the predicted value of π. In contrast to recent ARPES data, the Fermi surface obtained by our bulk measurements deviates significantly from the calculated band structure. Furthermore we observe broad anomalies in Hall and specific heat measurements that indicate an evolution of the electronic structure below 100 K which might be responsible for the observed discrepancies. This work has been supported by NSF through NSF-DMR-1157490 and NSF-DMR-1360863 as well as by DOE-BES through award de-sc0002613 and Army Research Office MURI Grant W911NF-11-1-0362.

Enhancement of current-perpendicular-to-plane giant magnetoresistance in Heusler-alloy based pseudo spin valves by using a CuZn spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Furubayashi, T., E-mail: furubayashi.takao@nims.go.jp; Takahashi, Y. K.; Sasaki, T. T.

2015-10-28

Enhancement of magnetoresistance output was attained in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices by using a bcc CuZn alloy for the spacer. Pseudo spin valves that consisted of the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy for ferromagnetic layers and CuZn alloy with the composition of Cu{sub 52.4}Zn{sub 47.6} for a spacer showed the large change of the resistance-area products, ΔRA, up to 8 mΩ·μm{sup 2} for a low annealing temperature of 350 °C. The ΔRA value is one of the highest reported so far for the CPP-GMR devices for the low annealing temperature, which is essential for processing read heads for hardmore » disk drives. We consider that the enhancement of ΔRA is produced from the spin-dependent resistance at the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/CuZn interfaces.« less

Interplanar coupling-dependent magnetoresistivity in high-purity layered metals

DOE PAGES

Kikugawa, N.; Goswami, P.; Kiswandhi, A.; ...

2016-03-29

The magnetic field-induced changes in the conductivity of metals are the subject of intense interest, both for revealing new phenomena and as a valuable tool for determining their Fermi surface. Here we report a hitherto unobserved magnetoresistive effect in ultra-clean layered metals, namely a negative longitudinal magnetoresistance that is capable of overcoming their very pronounced orbital one. This effect is correlated with the interlayer coupling disappearing for fields applied along the so-called Yamaji angles where the interlayer coupling vanishes. Therefore, it is intrinsically associated with the Fermi points in the field-induced quasi-one-dimensional electronic dispersion, implying that it results from themore » axial anomaly among these Fermi points. In its original formulation, the anomaly is predicted to violate separate number conservation laws for left- and right-handed chiral (for example, Weyl) fermions. Furthermore, its observation in PdCoO 2, PtCoO 2 and Sr 2RuO 4 suggests that the anomaly affects the transport of clean conductors, in particular near the quantum limit.« less

Magnetic Field Dependent Charge Transport Studies in Organic Semiconducting Materials

NASA Astrophysics Data System (ADS)

Martin, Jesse

Organic magnetoresistance is a phenomenon that is exhibited by many organic semiconductors. The resistance can change by more than 10 % at room temperature and as little as 10 milli-Tesla (mT) applied magnetic field. The change can be either positive or negative, and is angle invariant with respect to magnetic field orientation. Several theories have been presented to account for this anomalous magnetoresistance, but thus far the magnetoresistance by interconversion of singlets and triplets (MIST) model has been the most successful in explaining the behavior. Despite all the research that has gone into this effect, very few reports have gone to fields above 1 Tesla (T). In this manuscript, several specific predictions made by the MIST mechanism will be tested including qualitative behaviors and a quantitative fitting. Studies have been performed up to 35 T to explore the high field behavior. It will be demonstrated that for the low field regime, the MIST model is in excellent agreement with experiment, but that the high field regime is caused by a separate mechanism, not described by any current theory.

Origin of the magnetoresistance in oxide tunnel junctions determined through electric polarization control of the interface

DOE PAGES

Inoue, Hisashi; Swartz, Adrian G.; Harmon, Nicholas J.; ...

2015-11-11

The observed magnetoresistance (MR) in three-terminal (3T) ferromagnet-nonmagnet (FM-NM) tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect) of a spin accumulation, thus offering a powerful approach for characterizing the spin lifetime of candidate materials for spintronics applications. However, due to crucial discrepancies of the extracted spin parameters with known materials properties, this interpretation has come under intense scrutiny. By employing epitaxial artificial dipoles as the tunnel barrier in oxide heterostructures, the band alignments between the FM and NM channels can be controllably engineered, providing an experimental platform for testing the predictions of the various spin accumulation models.more » Using this approach, we have been able to definitively rule out spin accumulation as the origin of the 3T MR. Instead, we assign the origin of the magnetoresistance to spin-dependent hopping through defect states in the barrier, a fundamental phenomenon seen across diverse systems. In conclusion, a theoretical framework is developed that can account for the signal amplitude, linewidth, and anisotropy.« less

Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe 4

DOE PAGES

Jo, Na Hyun; Kaluarachchi, Udhara S.; Wu, Yun; ...

2016-11-11

Systematic measurements of temperature-dependent magnetization, resistivity, and angle-resolved photoemission spectroscopy (ARPES) at ambient pressure as well as resistivity under pressures up to 5.25 GPa were conducted on single crystals of CrAuTe 4. Magnetization data suggest that magnetic moments are aligned antiferromagnetically along the crystallographic c axis below T N = 255 K. ARPES measurements show band reconstruction due to the magnetic ordering. Magnetoresistance data show clear anisotropy, and, at high fields, quantum oscillations. The Néel temperature decreases monotonically under pressure, decreasing to T N = 236 K at 5.22 GPa. The pressure dependencies of (i) T N, (ii) the residualmore » resistivity ratio, and (iii) the size and power-law behavior of the low-temperature magnetoresistance all show anomalies near 2 GPa suggesting that there may be a phase transition (structural, magnetic, and/or electronic) induced by pressure. Lastly, for pressures higher than 2 GPa a significantly different quantum oscillation frequency emerges, consistent with a pressure induced change in the electronic states.« less

Tuning spin-polarized transport in organic semiconductors

NASA Astrophysics Data System (ADS)

Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

Temperature behavior of the magnetoresistance hysteresis in a granular high-temperature superconductor: Magnetic flux compression in the intergrain medium

NASA Astrophysics Data System (ADS)

Semenov, S. V.; Balaev, D. A.

2018-07-01

Granular high-temperature superconductors (HTSs) are characterized by the hysteretic behavior of magnetoresistance. This phenomenon is attributed to the effective field in the intergrain medium of a granular HTS. At the grain boundaries, which are, in fact, weak Josephson couplings, the dissipation is observed. The effective field in the intergrain medium is a superposition of the external field and the field induced by magnetic moments of HTS grains. Meanwhile, analysis of the field width of the R(H) magnetoresistance hysteresis ΔH = Hdec - Hinc at Hdec = const, where Hinc and Hdec are increasing and decreasing branches of the R(H) hysteretic dependence, shows that the effective field in the intergrain medium exceeds by far both the external field and the field induced by magnetic moments of HTS grains. This situation suggests the magnetic flux compression in the intergrain medium because of the small length of grain boundaries, which amounts to ∼1 nm, i.e., is comparable with the coherence length and corresponds to Josephson tunneling in HTS materials. In this work, using the previously developed approach, we examine experimental data on the magnetoresistance and magnetization hysteresis in the granular YBa2Cu3O7 HTS compound in the range from 77 K to the critical temperature. According to the results obtained, the degree of magnetic flux compression determined by the parameter α in the expression for the effective field Beff(H) = H - 4π M(H) α in the intergrain medium remains constant over the investigated temperature range. All the features of the observed evolution of the R(H) hysteretic dependences are explained well within the proposed approach when the expression for Beff(H) contains the experimental M(H) magnetization data and the parameter α of about 20-25. The latter is indicative of the dominant effect of magnetic flux compression in the intergrain medium on the transport properties of granular HTS materials.

Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide

NASA Astrophysics Data System (ADS)

Niu, Q.; Yu, W. C.; Yip, K. Y.; Lim, Z. L.; Kotegawa, H.; Matsuoka, E.; Sugawara, H.; Tou, H.; Yanase, Y.; Goh, Swee K.

2017-06-01

In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.

Highly angular dependent high-contrast grating mirror and its application for transverse-mode control of VCSELs

NASA Astrophysics Data System (ADS)

Inoue, Shunya; Kashino, Junichi; Matsutani, Akihiro; Ohtsuki, Hideo; Miyashita, Takahiro; Koyama, Fumio

2014-09-01

We report on the design and fabrication of a highly angular dependent high contrast grating (HCG) mirror. The modeling and experiment on amorphous-Si/SiO2 HCG clearly show the large angular dependence of reflectivity, which enables single transverse-mode operations of large-area VCSELs. We fabricate 980 nm VCSELs with the angular dependent HCG functioning as a spatial frequency filter. We obtained the single transverse mode operation of the fabricated device in contrast to conventional VCSELs with semiconductor multilayer mirrors.

Temperature-dependence of current-perpendicular-to-the-plane giant magnetoresistance spin-valves using Co{sub 2}(Mn{sub 1−x}Fe{sub x})Ge Heusler alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Page, M. R.; Nakatani, T. M., E-mail: nakatani.tomoya@nims.go.jp; Stewart, D. A.

2016-04-21

The properties of Co{sub 2}(Mn{sub 1−x}Fe{sub x})Ge (CMFG) (x = 0–0.4) Heusler alloy magnetic layers within polycrystalline current-perpendicular-to-the plane giant magnetoresistance (CPP-GMR) spin-valves are investigated. CMFG films annealed at 220–320 °C exhibit partly ordered B2 structure with an order parameter S{sub B2} = 0.3–0.4, and a lower S{sub B2} was found for a higher Fe content. Nevertheless, CPP-GMR spin-valve devices exhibit a relatively high magnetoresistance ratio of ∼13% and a magnetoresistance-area product (ΔRA) of ∼6 mΩ μm{sup 2} at room temperature, which is almost independent of the Fe content in the CMFG films. By contrast, at low temperatures, ΔRA clearly increases with higher Fe content,more » despite the lower B2 ordering for increasing the Fe content. Indeed, first-principles calculations reveal that the CMFG alloy with a partially disordered B2 structure has a greater density of d-state at the Fermi level in the minority band compared to the Fe-free (Co{sub 2}MnGe) alloy. This could explain the larger ΔRA measured on CMFG at low temperatures by assuming that s-d scattering mainly determines the spin asymmetry of resistivity as described in Mott's theory.« less

Large magnetoresistance ratio of 10% by Fe50Co50 layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films

NASA Astrophysics Data System (ADS)

Fukuzawa, Hideaki; Yuasa, Hiromi; Hashimoto, Susumu; Iwasaki, Hitoshi; Tanaka, Yoichiro

2005-08-01

We have realized a large magnetoresistance (MR) ratio of 10.2% by current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin-valve films having current-confined-path (CCP) structure formed by AlCu-NOL (nano-oxide-layer). CPP-GMR with conventional Co90Fe10 pinned and free layers showed an MR ratio and a ΔRA (the change of resistance area product) were 4% and 20mΩμm2, respectively, at a small RA (resistance area product) of 500mΩμm2. By replacing the Co90Fe10 layers by Fe50Co50 layers both for pinned and free layers, we have successfully realized a MR ratio and a ΔRA of 7.5% and 37.5mΩμm2, respectively, at a small RA of 500mΩμm2. Moreover, a large MR ratio of 10.2% and a large ΔRA of 418mΩμm2 were realized at a relatively large RA of 4100mΩμm2. This large MR ratio by using Fe50Co50 layers was due to a larger spin-dependent interface scattering factor γ of 0.72 for the interface between Fe50Co50 and Cu, which was improved from a γ of 0.62 for the interface between Co90Fe10 and Cu.

Magnetoresistive sensitivity and uniaxial anisotropy of spin-valve microstrips with a synthetic antiferromagnet

NASA Astrophysics Data System (ADS)

Chernyshova, T. A.; Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Bannikova, N. S.; Maksimova, I. K.; Petrov, I. A.; Ustinov, V. V.

2017-05-01

Microobjects (strips) were formed by contact photolithography using Ta/Ni80Fe20/Co90Fe10/Cu/Co90Fe10/Ru/Co90Fe10/Fe50Mn50/Ta spin-valves prepared by magnetron sputtering. A mutually perpendicular arrangement of uniaxial and unidirectional anisotropy axes in microobjects has been formed using two different thermomagnetic treatment regimes. The magnetoresistive sensitivity of spin valve and spin-valve-based microobject has been found to depend on the mutual arrangement of the easy magnetization axis and direction of magnetic field applied upon thermomagnetic treatment. The obtained data have been interpreted taking into account changes in the induced anisotropy and anisotropy due to the shape of the microobject.

Ultra-sharp oscillatory magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Boos, R.

Our investigations of magneto-transport properties of La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} manganite thin films of reduced dimensions revealed dramatic changes in R(θ), the dependence of resistivity on the angle between the magnetic field direction and the current direction, and consequently in the anisotropic magneto-resistance. A regular oscillatory  sin{sup 2}θ form of R(θ) is replaced by a very sharp rectangular-shaped ones when the dimensions of the system become comparable to the size of the intrinsic electronic domains. We discuss possible mechanisms that could be responsible for these changes.

Efficient spin-filtering, magnetoresistance and negative differential resistance effects of a one-dimensional single-molecule magnet Mn(dmit)2-based device with graphene nanoribbon electrodes

NASA Astrophysics Data System (ADS)

Liu, N.; Liu, J. B.; Yao, K. L.

2017-12-01

We present first-principle spin-dependent quantum transport calculations in a molecular device constructed by one single-molecule magnet Mn(dmit)2 and two graphene nanoribbon electrodes. Our results show that the device could generate perfect spin-filtering performance in a certain bias range both in the parallel configuration (PC) and the antiparallel configuration (APC). At the same time, a magnetoresistance effect, up to a high value of 103%, can be realized. Moreover, visible negative differential resistance phenomenon is obtained for the spin-up current of the PC. These results suggest that our one-dimensional molecular device is a promising candidate for multi-functional spintronics devices.

The effect of a nonmagnetic cap layer on the spin-polarized tunneling and magnetoresistance in double-barrier planar junctions

NASA Astrophysics Data System (ADS)

Xie, Zheng-Wei; Li, Bo-Zang; Li, Yu-Xian

2003-10-01

Within the framework of the free-electron model, the tunneling magnetoresistance (TMR) and tunneling conductance (TC) in double magnetic tunnel junctions (DMTJ) with nonmagnetic cap layer, i.e. the NM/FM/I/NM/(FM)/I/FM/NM junction is investigated. FM, NM and I represent the ferromagnetic metal, nonmagnetic metal and insulator, respectively, NM(FM) indicates that the middle layer can be NM or FM. Our results show that, due to the spin-dependent interfacial potential barriers, the influences of the thickness of the FM layer on TC and TMR in DMTJ are large, and when the thicknesses of these two FM layers are suitable a large TMR can be obtained. (

Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

PubMed

Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

2014-12-01

Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Angular behavior of synchrotron radiation harmonics.

PubMed

Bagrov, V G; Bulenok, V G; Gitman, D M; Jara, Jose Acosta; Tlyachev, V B; Jarovoi, A T

2004-04-01

The detailed analysis of angular dependence of the synchrotron radiation (SR) is presented. Angular distributions of linear and circular polarization integrated over all harmonics, well known for relativistic electron energies, are extended to include radiation from electrons that are not fully relativistic. In particular, we analyze the angular dependence of the integral SR intensity and peculiarities of the angular dependence of the first harmonics SR. Studying spectral SR intensities, we have discovered their unexpected angular behavior, completely different from that of the integral SR intensity; namely, for any given synchrotron frequency, maxima of the spectral SR intensities recede from the orbit plane with increasing particle energy. Thus, in contrast with the integral SR intensity, the spectral ones have the tendency to deconcentrate themselves on the orbit plane.

Effect of interfacial structures on spin dependent tunneling in epitaxial L1 0-FePt/MgO/FePt perpendicular magnetic tunnel junctions

DOE PAGES

Yang, G.; Li, D. L.; Wang, S. G.; ...

2015-02-24

In this study, epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1 0-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Finally,more » both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.« less

Effect of interfacial structures on spin dependent tunneling in epitaxial L1{sub 0}-FePt/MgO/FePt perpendicular magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, G.; Li, D. L.; Wang, S. G., E-mail: Sgwang@iphy.ac.cn

2015-02-28

Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1{sub 0}-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominantmore » role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.« less

Free and forced Barkhausen noises in magnetic thin film based cross-junctions

NASA Astrophysics Data System (ADS)

Elzwawy, Amir; Talantsev, Artem; Kim, CheolGi

2018-07-01

Barkhausen noise, driven by thermal fluctuations in stationary magnetic field, and Barkhausen jumps, driven by sweeping magnetic field, are demonstrated to be effects of different orders of magnitude. The critical magnetic field for domain walls depinning, followed by avalanched and irreversible magnetization jumps, is determined. Magnetoresistive response of NiFe/M/NiFe (M = Au, Ta, Ag) trilayers to stationary and sweeping magnetic field is studied by means of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) measurements. Thermal fluctuations result in local and reversible changes of magnetization of the layers in thin film magnetic junctions, while the sweeping magnetic field results in reversible and irreversible avalanched domain motion, dependently on the ratio between the values of sweeping magnetic field and domain wall depinning field. The correlation between AMR and PHE responses to Barkhausen jumps is studied. The value of this correlation is found to be dependent on the α angle between the directions of magnetic field and current path.

Method and apparatus for sensing a desired component of an incident magnetic field using magneto resistive elements biased in different directions

NASA Technical Reports Server (NTRS)

Pant, Bharat B. (Inventor); Wan, Hong (Inventor)

1999-01-01

A method and apparatus for sensing a desired component of a magnetic field using an isotropic magnetoresistive material. This is preferably accomplished by providing a bias field that is parallel to the desired component of the applied magnetic field. The bias field is applied in a first direction relative to a first set of magnetoresistive sensor elements, and in an opposite direction relative to a second set of magnetoresistive sensor elements. In this configuration, the desired component of the incident magnetic field adds to the bias field incident on the first set of magnetoresistive sensor elements, and subtracts from the bias field incident on the second set of magnetoresistive sensor elements. The magnetic field sensor may then sense the desired component of the incident magnetic field by simply sensing the difference in resistance of the first set of magnetoresistive sensor elements and the second set of magnetoresistive sensor elements.

Large magnetoresistance induced by crystallographic defects in FexTaS2 single crystals

NASA Astrophysics Data System (ADS)

Chen, Chih-Wei; Morosan, Emilia; Morosan's Group Team

The search for the materials that show large magnetoresistance and the mechanisms that induce it remains challenging in both experimental and theoretical aspects. The giant magnetoresistance in one class of materials, ferromagnetic conductors, is generally attributed to the misalignments of magnetic moments, which cause spin disorder scattering. Recently, very large magnetoresistance (>60 %) was discovered in the ferromagnetic Fe-intercalated transition metal dichalcogenide, Fe0.28TaS2 [Phys. Rev. B 91, 054426(2015)]. The mechanism that led to this large magnetoresistance was suggested to be due to the deviation of Fe concentration from commensurate values (1/4 or 1/3), which caused magnetic moments' misalignments. Here we report a study of FexTaS2 crystals with x close to the commensurate values. Our results qualitatively demonstrate that crystallographic defects significantly affect magnetoresistance in FexTaS2. This provides a way to search for large magnetoresistance in more intercalated transition metal dichalcogenides. This work is supported by the Department of Defense PECASE.

Large magnetoresistance by Pauli blockade in hydrogenated graphene

NASA Astrophysics Data System (ADS)

Guillemette, J.; Hemsworth, N.; Vlasov, A.; Kirman, J.; Mahvash, F.; Lévesque, P. L.; Siaj, M.; Martel, R.; Gervais, G.; Studenikin, S.; Sachrajda, A.; Szkopek, T.

2018-04-01

We report the observation of a giant positive magnetoresistance in millimeter-scale hydrogenated graphene with the magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute the observed positive in-plane magnetoresistance to a Pauli blockade of hopping conduction induced by spin polarization. Our Rapid Communication shows that spin polarization in concert with electron-electron interaction can play a dominant role in magnetotransport within an atomic monolayer.

Circuitry, systems and methods for detecting magnetic fields

DOEpatents

Kotter, Dale K [Shelley, ID; Spencer, David F [Idaho Falls, ID; Roybal, Lyle G [Idaho Falls, ID; Rohrbaugh, David T [Idaho Falls, ID

2010-09-14

Circuitry for detecting magnetic fields includes a first magnetoresistive sensor and a second magnetoresistive sensor configured to form a gradiometer. The circuitry includes a digital signal processor and a first feedback loop coupled between the first magnetoresistive sensor and the digital signal processor. A second feedback loop which is discrete from the first feedback loop is coupled between the second magnetoresistive sensor and the digital signal processor.

Fast Magnetoresistive Random-Access Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1991-01-01

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

A High-Spin Rate Measurement Method for Projectiles Using a Magnetoresistive Sensor Based on Time-Frequency Domain Analysis

PubMed Central

Shang, Jianyu; Deng, Zhihong; Fu, Mengyin; Wang, Shunting

2016-01-01

Traditional artillery guidance can significantly improve the attack accuracy and overall combat efficiency of projectiles, which makes it more adaptable to the information warfare of the future. Obviously, the accurate measurement of artillery spin rate, which has long been regarded as a daunting task, is the basis of precise guidance and control. Magnetoresistive (MR) sensors can be applied to spin rate measurement, especially in the high-spin and high-g projectile launch environment. In this paper, based on the theory of a MR sensor measuring spin rate, the mathematical relationship model between the frequency of MR sensor output and projectile spin rate was established through a fundamental derivation. By analyzing the characteristics of MR sensor output whose frequency varies with time, this paper proposed the Chirp z-Transform (CZT) time-frequency (TF) domain analysis method based on the rolling window of a Blackman window function (BCZT) which can accurately extract the projectile spin rate. To put it into practice, BCZT was applied to measure the spin rate of 155 mm artillery projectile. After extracting the spin rate, the impact that launch rotational angular velocity and aspect angle have on the extraction accuracy of the spin rate was analyzed. Simulation results show that the BCZT TF domain analysis method can effectively and accurately measure the projectile spin rate, especially in a high-spin and high-g projectile launch environment. PMID:27322266

Magnetic impurities in conducting oxides. II. (Sr1-xLax)(Ru1-xCox)O3 system

NASA Astrophysics Data System (ADS)

Mamchik, A.; Dmowski, W.; Egami, T.; Chen, I.-Wei

2004-09-01

The perovskite solid solution between ferromagnetic SrRuO3 and antiferromagnetic LaCoO3 is studied and its structural, electronic,and magnetic properties are compared with (Sr1-xLax)(Ru1-xFex)O3 . The lower 3d energy levels of Co3+ cause a local charge transfer from 4dRu4+ , a reaction that has the novel feature of being sensitive to the local atomic structure such as cation order. Despite such a complication, Co , like Fe , spin-polarizes the itinerant electrons in SrRuO3 to form a large local magnetic moment that is switchable at high fields. In the spin glass regime when Anderson localization dominates, a large negative magnetoresistance emerges as a result of spin polarization of mobile electronic carriers that occupy states beyond the mobility edge. A phenomenological model predicting an inverse relation between magnetoresistance and saturation magnetization is proposed to explain the composition dependence of magnetoresistance for both (Sr1-xLax)(Ru1-xCOx)O3 and (Sr1-xLax)(Ru1-xFex)O3 systems.

Effect of grain boundary layer strain on the magnetic and transport properties of (100- x) La 0.7Ca 0.3MnO 3/( x) BaTiO 3 composites showing enhanced magnetoresistance

NASA Astrophysics Data System (ADS)

Bose, Esa; Taran, S.; Karmakar, S.; Chaudhuri, B. K.; Pal, S.; Sun, C. P.; Yang, H. D.

2007-07-01

A ferromagnetic/ferroelectric composite system, viz. (100- x)La 0.7Ca 0.3 MnO 3 [LCMO]/( x) BaTiO 3 [BTO] (with x=0.0%, 1.0%, 5.0%, 7.5%, 10.0% and 15.0%, in wt%) has been synthesized and the temperature-dependent DC magnetization M( T), resistivity ρ( T), magnetoresistance (MR), and thermoelectric power S( T) have been studied. Both metal-insulator transition temperature ( TMI) and the corresponding Curie temperature ( TC) decrease whereas peak resistivity at TMI increases as x is enhanced from 0.0% to 10.0%. For x>10.0%, this trend of variation is reversed. A maximum three-fold increase of magnetoresistance (MR) is observed (for sample with x=10.0%) due to the addition of ferroelectric (non-magnetic) perovskite BTO (compared to the mother compound LCMO). Interestingly, thermoelectric power S( T) shows a pronounced depression (dip) near the magnetic transition region for the composite samples. The above results have been analyzed considering strain induced by the LCMO/BTO grain boundary layer (BL).

Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

NASA Astrophysics Data System (ADS)

Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

2017-05-01

Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge-carrier concentrations. At low charge-carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge-carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large nonsaturating magnetoresistance and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge-carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge-carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magnetoelectric sensors and memory devices.

The relationship between anisotropic magnetoresistance and topology of Fermi surface in Td-MoTe2 crystal

NASA Astrophysics Data System (ADS)

Lv, Yang-Yang; Li, Xiao; Pang, Bin; Cao, Lin; Lin, Dajun; Zhang, Bin-Bin; Yao, Shu-Hua; Chen, Y. B.; Zhou, Jian; Dong, Song-Tao; Zhang, Shan-Tao; Lu, Ming-Hui; Chen, Yan-Feng

2017-07-01

Layered transition-metal dichalcogenides have been recently attracted a lot of attention because of their unique physical properties, such as extremely large and anisotropic magnetoresistance (MR) in WTe2. In this work, we observed the abnormally anisotropic MR on Td-MoTe2 crystal that is strongly dependent on the temperature, as well as the orientations of both magnetic field B and electric field E with respect to crystallographic axes of Td-MoTe2. When E//a-axis and B//c-axis, MR is parabolically dependent on B and is as high as 520% under 9 T and 2 K conditions; the MR is quasi-linearly dependent on B when E//a-axis and B//b-axis (E//b-axis and B//c-axis), and the corresponding MR is only 130% (220%); MR is initially parabolically dependent on B, then linearly on B, and finally shows a saturate trend under E//B//a-axis (or E//B//b-axis) conditions, and the MR is about 16% (30%). These anisotropic MR behaviors can be qualitatively explained by the features of the Fermi surface of Td-MoTe2. This work may demonstrate the rich anisotropic physical behavior in layered transition-metal dichalcognides.

Spin-dependent Seebeck Effect, Thermal Colossal Magnetoresistance and Negative Differential Thermoelectric Resistance in Zigzag Silicene Nanoribbon Heterojunciton.

PubMed

Fu, Hua-Hua; Wu, Dan-Dan; Zhang, Zu-Quan; Gu, Lei

2015-05-22

Spin-dependent Seebeck effect (SDSE) is one of hot topics in spin caloritronics, which examine the relationships between spin and heat transport in materials. Meanwhile, it is still a huge challenge to obtain thermally induced spin current nearly without thermal electron current. Here, we construct a hydrogen-terminated zigzag silicene nanoribbon heterojunction, and find that by applying a temperature difference between the source and the drain, spin-up and spin-down currents are generated and flow in opposite directions with nearly equal magnitudes, indicating that the thermal spin current dominates the carrier transport while the thermal electron current is much suppressed. By modulating the temperature, a pure thermal spin current can be achieved. Moreover, a thermoelectric rectifier and a negative differential thermoelectric resistance can be obtained in the thermal electron current. Through the analysis of the spin-dependent transport characteristics, a phase diagram containing various spin caloritronic phenomena is provided. In addition, a thermal magnetoresistance, which can reach infinity, is also obtained. Our results put forward an effective route to obtain a spin caloritronic material which can be applied in future low-power-consumption technology.

Impact of Magneto-Electric Materials and Devices on Tactical Radio (and Radar)

DTIC Science & Technology

2007-04-01

and frequency dependent variable permittivity in a single device • Magnetic properties controlled by electric field. The goals of the seedling...such as HoMnO3) and composites (such as PZT- Terfenol-D). Other possible candidate materials are thought to include colossal magnetoresistive oxides

Dependencies of lepton angular distribution coefficients on the transverse momentum and rapidity of Z bosons produced in p p collisions at the LHC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Wen -Chen; McClellan, Randall Evan; Peng, Jen -Chieh

Here, high precision data of lepton angular distributions formore » $$\\gamma^*/Z$$ production in $pp$ collisions at the LHC, covering broad ranges of dilepton transverse momenta ($$q_T$$) and rapidity ($y$), were recently reported. Strong $$q_T$$ dependencies were observed for several angular distribution coefficients, $$A_i$$, including $$A_0 - A_4$$. Significant $y$ dependencies were also found for the coefficients $$A_1$$, $$A_3$$ and $$A_4$$, while $$A_0$$ and $$A_2$$ exhibit very weak rapidity dependence. Using an intuitive geometric picture we show that the $$q_T$$ and $y$ dependencies of the angular distributions coefficients can be well described.« less

Dependencies of lepton angular distribution coefficients on the transverse momentum and rapidity of Z bosons produced in p p collisions at the LHC

DOE PAGES

Chang, Wen -Chen; McClellan, Randall Evan; Peng, Jen -Chieh; ...

2017-09-21

Here, high precision data of lepton angular distributions formore » $$\\gamma^*/Z$$ production in $pp$ collisions at the LHC, covering broad ranges of dilepton transverse momenta ($$q_T$$) and rapidity ($y$), were recently reported. Strong $$q_T$$ dependencies were observed for several angular distribution coefficients, $$A_i$$, including $$A_0 - A_4$$. Significant $y$ dependencies were also found for the coefficients $$A_1$$, $$A_3$$ and $$A_4$$, while $$A_0$$ and $$A_2$$ exhibit very weak rapidity dependence. Using an intuitive geometric picture we show that the $$q_T$$ and $y$ dependencies of the angular distributions coefficients can be well described.« less

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

NASA Astrophysics Data System (ADS)

Fukushima, A.; Taniguchi, T.; Sugihara, A.; Yakushiji, K.; Kubota, H.; Yuasa, S.

2018-05-01

Perpendicularly magnetized magnetic tunnel junction (p-MTJ) is a key element for developing high-density spin-transfer torque switching magnetoresistive random access memory. Recently, a large exchange coupling (IEC) in the synthetic antiferromagnetic reference layer with Ir interlayer was observed in p-MTJs. The evaluation of the IEC is, however, difficult due to the electrostatic breakdown of MTJs. This study demonstrates the evaluation of the IEC with Ir interlayer in giant magnetoresistive (GMR) nanopillar. We fabricated three kinds of perpendicularly magnetized GMR elements; bottom-free structures with Cu or Ir spacer, and top-free structure with Ir spacer. The magnetoresistance (RH) loops of all samples show sharp changes of the magnetoresistance at the magnetic fields over ±10 kOe, indicating the existence of the large IECs. In particular, a sharp change of the magnetoresistance at the field over ±20 kOe was found for the element with Cu of 2 nm thickness.

Extreme magnetoresistance and SdH oscillation in compensated semimetals of NbSb2 single crystals

NASA Astrophysics Data System (ADS)

Guo, Lei; Liu, Yu-Kuai; Gao, Guan-Yin; Huang, Ye-Yu; Gao, Heng; Chen, Lei; Zhao, Weiyao; Ren, Wei; Li, Shi-Yan; Li, Xiao-Guang; Dong, Shuai; Zheng, Ren-Kui

2018-04-01

Topological semimetals represent one of the most interesting classes of materials that continue to attract worldwide interest. Here, we report magnetotransport properties of MPn2-type (M = Nb, Ta; Pn = P, As, Sb) NbSb2 single-crystal semimetals with a centrosymmetric C12/m1 space group, paramagnetic ground state, and non-saturation parabolic-like magnetoresistance. The NbSb2 crystals show metallic conductivity down to 2 K and undergo a metal-to-insulator-like transition under a magnetic field B (B ≥ 4 T) and exhibit a resistivity plateau in the low-temperature region (T ≤ 10 K), where the value of resistivity strongly depends on the magnitude and direction of the magnetic field. Upon sweeping the magnetic field from 0 to 14.5 T in the transverse configuration at T = 1.5 K, the NbSb2 crystal shows a large positive magnetoresistance (4.2 × 103% at B = 14.5 T) with Shubnikov-de Haas (SdH) oscillation. Hall measurements reveal that both the carrier compensation between electrons and holes and the high mobility and large mean free path of carriers contribute to the large magnetoresistance. Fast Fourier transform analyses of angle-resolved SdH oscillation indicate that the Fermi surface of the NbSb2 crystal is quasi-two-dimensional with three-dimensional components. These findings, together with the theoretically calculated electronic band structure obtained within the framework of density functional theory, suggest that NbSb2 is a good candidate compensated semimetal for further theoretical and experimental investigation of this family of materials.

Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag/Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} current-perpendicular-to-plane pseudo spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, J. W.; Sakuraba, Y., E-mail: Sakuraba.Yuya@nims.go.jp; Sasaki, T. T.

2016-03-07

We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm{sup 2}) and 77% (31 mΩ μm{sup 2}) atmore » room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.« less

Lateral electric-field control of giant magnetoresistance in Co/Cu/Fe/BaTiO{sub 3} multiferroic heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savitha Pillai, S.; Kojima, H.; Itoh, M.

2015-08-17

We report lateral electric-field-driven sizable changes in the magnetoresistance of Co/Cu/Fe tri-layered wires on BaTiO{sub 3} single crystal. While the observed change is marginal in the tetragonal phase of BaTiO{sub 3}, it reaches over 40% in the orthorhombic and rhombohedral phases with an electric field of 66 kV/cm. We attribute it to possible electric-field-induced variations of the spin-dependent electronic structures, i.e., spin polarization, of the Fe via interfacial strain transfer from BaTiO{sub 3}. The contrasting results for the different phases of BaTiO{sub 3} are discussed, associated with the distinct aspects of the ferroelectric polarization switching processes in each phase.

Stability of standing spin wave in permalloy thin film studied by anisotropic magnetoresistance effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamanoi, K.; Yokotani, Y.; Cui, X.

2015-12-21

We have investigated the stability for the resonant spin precession under the strong microwave magnetic field by a specially developed detection method using the anisotropic magnetoresistance effect. The electrically separated excitation and detection circuits enable us to investigate the influence of the heating effect and the nonuniform spin dynamics independently. The large detecting current is found to induce the field shift of the resonant spectra because of the Joule heating. From the microwave power dependence, we found that the linear response regime for the standing spin wave is larger than that for the ferromagnetic resonance. This robust characteristic of themore » standing spin wave is an important advantage for the high power operation of the spin-wave device.« less

Investigation of the difference between spin Hall magnetoresistance rectification and spin pumping from the viewpoint of magnetization dynamics

NASA Astrophysics Data System (ADS)

Zhang, Qihan; Fan, Xiaolong; Zhou, Hengan; Kong, Wenwen; Zhou, Shiming; Gui, Y. S.; Hu, C.-M.; Xue, Desheng

2018-02-01

Spin pumping (SP) and spin rectification due to spin Hall magnetoresistance (SMR) can result in a dc resonant voltage signal, when magnetization in ferromagnetic insulator/nonmagnetic structures experiences ferromagnetic resonance. Since the two effects are often interrelated, quantitative identification of them is important for studying the dynamic nonlocal spin transport through an interface. In this letter, the key difference between SP and SMR rectification was investigated from the viewpoint of spin dynamics. The phase-dependent nature of SMR rectification, which is the fundamental characteristic distinguishing it from SP, was tested by a well-designed experiment. In this experiment, two identical yttrium iron garnet/Pt strips with a π phase difference in dynamic magnetization show the same SP signals and inverse SMR signals.

Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

NASA Astrophysics Data System (ADS)

Sant, S.; Mao, M.; Kools, J.; Koi, K.; Iwasaki, H.; Sahashi, M.

2001-06-01

Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ˜19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.

Structure-dependent magnetoresistance and spin-transfer torque in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions

NASA Astrophysics Data System (ADS)

Jia, Xingtao; Tang, Huimin; Wang, Shizhuo; Qin, Minghui

2017-02-01

We predict large magnetoresistance (MR) and spin transfer torque (STT) in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions based on first-principles scattering theory. MR as large as ˜100 % is found in one junction. Magnetic dynamic simulations show that STT acting on the antiferromagnetic order parameter dominates the spin dynamics, and an electronic bias of order 10-1mV and current density of order 105Acm-2 can switches a junction of three-layer MgO, they are about one order smaller than that in Fe |MgO |Fe junction with the same barrier thickness, respectively. The multiple scattering in the antiferromagnetic region is considered to be responsible for the enhanced spin torque and smaller switching current density.

Pressure-induced topological phase transitions and strongly anisotropic magnetoresistance in bulk black phosphorus

NASA Astrophysics Data System (ADS)

Li, Chun-Hong; Long, Yu-Jia; Zhao, Ling-Xiao; Shan, Lei; Ren, Zhi-An; Zhao, Jian-Zhou; Weng, Hong-Ming; Dai, Xi; Fang, Zhong; Ren, Cong; Chen, Gen-Fu

2017-03-01

We report the anisotropic magnetotransport measurement on a noncompound band semiconductor black phosphorus (BP) with magnetic field B up to 16 Tesla applied in both perpendicular and parallel to electric current I under hydrostatic pressures. The BP undergoes a topological Lifshitz transition from band semiconductor to a zero-gap Dirac semimetal state at a critical pressure Pc, characterized by a weak localization-weak antilocalization transition at low magnetic fields and the emergence of a nontrivial Berry phase of π detected by SdH magneto-oscillations in magnetoresistance curves. In the transition region, we observe a pressure-dependent negative MR only in the B ∥I configuration. This negative longitudinal MR is attributed to the Adler-Bell-Jackiw anomaly (topological E .B term) in the presence of weak antilocalization corrections.

Hall effect within the colossal magnetoresistive semimetallic state of MoTe2

NASA Astrophysics Data System (ADS)

Zhou, Qiong; Rhodes, D.; Zhang, Q. R.; Tang, S.; Schönemann, R.; Balicas, L.

2016-09-01

Here, we report a systematic study on the Hall effect of the semimetallic state of bulk MoTe2, which was recently claimed to be a candidate for a novel type of Weyl semimetallic state. The temperature (T ) dependence of the carrier densities and of their mobilities, as estimated from a numerical analysis based on the isotropic two-carrier model, indicates that its exceedingly large and nonsaturating magnetoresistance may be attributed to a near perfect compensation between the densities of electrons and holes at low temperatures. A sudden increase in hole density, with a concomitant rapid increase in the electron mobility below T ˜40 K, leads to comparable densities of electrons and holes at low temperatures suggesting a possible electronic phase transition around this temperature.

Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T

NASA Astrophysics Data System (ADS)

Niu, Wei; Wang, Xuefeng; Gao, Ming; Xia, Zhengcai; Du, Jun; Nie, Yuefeng; Song, Fengqi; Xu, Yongbing; Zhang, Rong

2017-05-01

We report on the temperature and field dependence of resistance of La0.7Sr0.3MnO3 thin films over a wide temperature range and in pulsed magnetic fields up to 60 T. The epitaxial La0.7Sr0.3MnO3 thin films were deposited by laser molecular beam epitaxy. High magnetic field magnetoresistance curves were fitted by the Brillouin function, which indicated the existence of magnetically polarized regions and the underlying hopping mechanism. The unsaturated magnetoconductance was the most striking finding observed in pulsed magnetic fields up to 60 T. These observations can deepen the fundamental understanding of the colossal magnetoresistance in manganites with strong correlation of transport properties and magnetic ordering.

Robust tunability of magnetoresistance in half-Heusler R PtBi ( R = Gd , Dy, Tm, and Lu) compounds

DOE PAGES

Mun, Eundeok; Bud'ko, Sergey L.; Canfield, Paul C.

2016-03-15

We present the magnetic field dependencies of transport properties for RPtBi ( R = Gd, Dy, Tm, and Lu) half-Heusler compounds. Temperature- and field-dependent resistivity measurements of high-quality RPtBi single crystals reveal an unusually large, nonsaturating magnetoresistance (MR) up to 300 K under a moderate magnetic field of H = 140 kOe. At 300 K, the large MR effect decreases as the rare earth is traversed from Gd to Lu and the magnetic field dependence of MR shows a deviation from the conventional H2 behavior. The Hall coefficient ( RH) for R = Gd indicates a sign change around 120more » K, whereas RH curves for R = Dy, Tm, and Lu remain positive for all measured temperatures. At 300 K, the Hall resistivity reveals a deviation from the linear field dependence for all compounds. Thermoelectric power measurements on this family show strong temperature and magnetic field dependencies which are consistent with resistivity measurements. A highly enhanced thermoelectric power under applied magnetic field is observed as high as ~100 μV/K at 140 kOe. Furthermore, analysis of the transport data in this series reveals that the rare-earth-based half-Heusler compounds provide opportunities to tune MR effect through lanthanide contraction and to elucidate the mechanism of nontrivial MR.« less

Magnetoresistance enhancement in Gd- Y bilayers

NASA Astrophysics Data System (ADS)

Freitas, P. P.; From, M.; Melo, L. V.; Plaskett, T. S.

1991-02-01

Gd-Y-Gd bilayers were prepared that show a magnetoresistance enhancement when the non-magnetic Y layer separations is 11 or 32 Å. This oscillatory behavior of the magnetoresistance versus Y thickness is tentatively related to oscillations in the interlayer coupling.

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

PubMed Central

Ye, Tianyu; Liu, Han-Chun; Wang, Zhuo; Wegscheider, W.; Mani, Ramesh G.

2015-01-01

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ. PMID:26450679

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation.

PubMed

Ye, Tianyu; Liu, Han-Chun; Wang, Zhuo; Wegscheider, W; Mani, Ramesh G

2015-10-09

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ.

Electric field control of magnetoresistance in InP nanowires with ferromagnetic contacts.

PubMed

Zwanenburg, F A; van der Mast, D W; Heersche, H B; Kouwenhoven, L P; Bakkers, E P A M

2009-07-01

We demonstrate electric field control of sign and magnitude of the magnetoresistance in InP nanowires with ferromagnetic contacts. The sign change in the magnetoresistance is directly correlated with a sign change in the transconductance. Additionally, the magnetoresistance is shown to persist at such a high bias that Coulomb blockade has been lifted. We also observe the magnetoresistance when one of the ferromagnets is replaced by a nonmagnetic metal. We conclude that it must be induced by a single ferromagnetic contact, and that spin transport can be ruled out as the origin. Our results emphasize the importance of a systematic investigation of spin-valve devices in order to discriminate between ambiguous interpretations.

Reinforcement of double-exchange ferromagnetic coupling by Ru in La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7} manganite system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumaresavanji, M., E-mail: vanji.hplt@gmail.com; Fontes, M.B.; Lopes, A.M.L.

2014-03-01

Highlights: • Effect of Mn-site doping by Ru has been studied in La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7}. • Electrical resistance, magnetoresistance and magnetic properties were measured. • Ru substitution enhances the ferromagnetism and metallicity. • Results were interpreted by the ferromagnetically coupled Ru with Mn ions in Mn–O–Ru network. - Abstract: The effect of Mn-site doping on magnetic and transport properties in the bilayer manganites La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7} (y = 0.0, 0.04, 0.08 and 0.15) has been studied. The undoped compound La{sub 1.24}Sr{sub 1.76}Mn{sub 2}O{sub 7} exhibits a ferromagnetic metal to paramagnetic insulator transition at T{submore » C} = 130 K and the substitution of Ru shifts the transition temperatures to higher temperature values. The increased metal–insulator transition by Ru substitution, obtained from temperature dependence of resistivity measurements, indicates that the Ru substitution enhances the metallic state at low temperature regime and favours the Mn–Ru pairs in the Ru doped samples. Moreover, the activation energy values calculated from the temperature dependence of resistivity curves suggest that the Ru substitution weakens the formation of polarons. The increased magnetoresistance ratio from 108% to 136% by Ru substitution, measured at 5 K, points out that the Ru substitution also enhances the inter-grain tunneling magnetoresistance. Thus, the ferromagnetic order and metallic state in La{sub 1.24}Sr{sub 1.76}Mn{sub 2}O{sub 7} system have been enhanced by the presence of Ru in the Mn-site. These reinforcements of ferromagnetic metallic state and magnetoresistance have been interpreted by the ferromagnetically coupled high spin states of Ru with Mn ions in the Mn–O–Ru network.« less

The Anomalous Magnetoresistance of Graphite at High Magnetic Fields,

DTIC Science & Technology

1983-05-01

magnetoresistance anomaly. In the present work, the unusual properties of this fine structure (which is periodic in magnetic field H ) is examined in more detail...structure associated with the magnetoresistance anomly is (AH/ H ) - 0.1 T/25 T or about 0.4 Z. Thus, for typical magnetic field sweep rates (10 T in 10...magnetoresistance above 12 T have been associated by lye at al.2 with a linear increase in carrier concentration with increasing H .1 The anomalous increase

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Tianyu; Liu, Han -Chun; Wang, Zhuo

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. As a result, for circularly polarized radiation, the oscillatory magnetoresistive response ismore » hardly sensitive to θ.« less

Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

DOE PAGES

Ye, Tianyu; Liu, Han -Chun; Wang, Zhuo; ...

2015-10-09

A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. As a result, for circularly polarized radiation, the oscillatory magnetoresistive response ismore » hardly sensitive to θ.« less

Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.

PubMed

Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng

2017-12-28

The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

A-site cationic disorder induced significantly large magnetoresistance in polycrystalline La0.2Gd0.5Ba0.3MnO3 compound

NASA Astrophysics Data System (ADS)

Saha, Suvayan; Das, Kalipada; Bandyopadhyay, Sudipta; Das, I.

2017-11-01

The observation of significantly large magnetoresistance at the liquid nitrogen temperature range in the polycrystalline La0.2Gd0.5Ba0.3MnO3 (LGBMO) compound has been addressed in the present manuscript. The motivation of considering LGBMO sample is the average 'A' site ionic radius 〈rA 〉 and tolerance factor (t), almost same as that of La0.7Sr0.3MnO3 (LSMO), which is a well studied colossal magnetoresistive material. Magnetoresistance of the LGBMO compound has been compared with the LSMO as well as parent compound La0.7Ba0.3MnO3(LBMO) to show the enhancement of magnetoresistance in LGBMO compound. This observed nature has been elucidated considering the disorder induced short range magnetic interaction due to the enhance size disorder parameter (σ2). Our study revels that, size disorder parameter plays the crucial role for enhancing the colossal magnetoresistance.

Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers

PubMed Central

Stamopoulos, D.; Aristomenopoulou, E.

2015-01-01

Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent ‘on’ and ‘off’, thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis. PMID:26306543

Distinctive features of transport in topological insulators

NASA Astrophysics Data System (ADS)

Sacksteder, Vincent; Wu, Quansheng; Arnardottir, Kristin; Shelykh, Ivan; Kettemann, Stefan

2015-03-01

The surface states of a topological insulator in a fine-tuned magnetic field are ideal candidates for realizing a topological metal which is protected against disorder. Its signatures are (1) a conductance plateau in long wires and (2) a conductivity which always increases with sample size. We numerically show that the bulk substantially accelerates the conductance plateaus's decay in a magnetic field. It also reduces the effects of surface disorder and causes the magnitude of the surface conductivity and the magnetoconductivity to depend systematically on sample details such as doping and disorder strength. In addition, we predict a new signature of the topological state: at low temperatures the magnetoresistance will deviate strongly from the Hikami-Larkin-Nagaoka (HLN) formula. In this regime the magnetoresistance is dominated by scattering processes which wrap around the TI sample. The HLN formula's shoulder is replaced by a feature with a larger critical field magnetic strength that is caused by wrapping. Inside the wrapping regime the magnetoconductance will lose its dependence on temperature. This new topological signature should be visible in the same samples and temperatures where the Altshuler-Aronov-Spivak (AAS) effect has already been observed.

Spin-dependence of the electron scattering cross section by a magnetic layer system and the magneto-resistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, J.T.; Tang, F.; Brown, W.D.

1998-12-20

The authors present a theoretical model for calculating the spin-dependent cross section of the scattering of electrons by a magnetic layer system. The model demonstrates that the cross sections of the scattering are different for spin up and spin down electrons. The model assumes that the electrical resistivity in a conductor is proportional to the scattering cross section of the electron in it. It is believed to support the two channel mechanism in interpreting magneto-resistance (MR). Based on the model without considering the scattering due to the interfacial roughness and the spin flipping scattering, the authors have established a relationshipmore » between MR and the square of the magnetic moment in the bulk sample without considering the scattering due to the interfacial roughness and the spin flipping scattering. It can also qualitatively explain the MR difference between the current in plane (CIP) and current perpendicular to the plane (CPP) configurations. The predictions by the model agree well with the experimental findings.« less

TOPICAL REVIEW: Spin-dependent tunnelling in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Tsymbal, Evgeny Y.; Mryasov, Oleg N.; LeClair, Patrick R.

2003-02-01

The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR.

Effect of thin oxide layers incorporated in spin valve structures

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.; Leibbrandt, G. W. R.

2001-06-01

The enhancement of the magnetoresistance effect, induced by incorporating nano-oxide layers (NOLs) in a bottom-type spin valve, was studied for various preparation conditions. The effect of a NOL in the Co90Fe10 pinned layer was found to depend critically on the oxygen pressure applied to form the thin oxide film. Pressures over 10-3 Torr O2 yield oxides thicker than about 0.7 nm, which apparently deteriorate the biasing field which exists over the oxide. The magnetoresistance values can further be raised by forming a specular reflecting oxide on top of the sense layer. Promising results were obtained with an Al2O3 capping layer formed in a solid-state oxidation reaction that occurs spontaneously when a thin Al layer is deposited on the oxidized surface of the Co90Fe10 sense layer.

Towards a Unified Picture of Spin Dependent Transport in and Perpendicular Giant Magnetoresistance and Bulk Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, S.; Holody, P.; Loloee, R.

1997-03-01

From data on (Fe{sub 1-x}V{sub x}/Cu/Co/Cu){sub N} multilayers, we show that Fe doped with V gains a negative spin asymmetry for bulk scattering ({beta}{lt}0), which, combined with the positive asymmetry of Co, accounts for the inverse current perpendicular to the plane (CPP) giant magnetoresistance (GMR) we observe. More precisely, the competition between positive and negative asymmetries for interface and bulk scatterings in FeV leads to inverse (normal) GMR for layers thicker (thinner) than a compensation thickness. The negative {beta} of FeV is consistent with theoretical predictions and bulk alloy data. The current in the plane (CIP) GMR is not reversed,more » which illustrates the role of channeling in CIP. {copyright} {ital 1997} {ital The American Physical Society}« less

Strain-induced changes of the electronic properties of B -site ordered double-perovskite Sr2CoIrO6 thin films

NASA Astrophysics Data System (ADS)

Esser, S.; Chang, C. F.; Kuo, C.-Y.; Merten, S.; Roddatis, V.; Ha, T. D.; Jesche, A.; Moshnyaga, V.; Lin, H.-J.; Tanaka, A.; Chen, C. T.; Tjeng, L. H.; Gegenwart, P.

2018-05-01

B -site ordered thin films of double perovskite Sr2CoIrO6 were epitaxially grown by a metalorganic aerosol deposition technique on various substrates, actuating different strain states. X-ray diffraction, transmission electron microscopy, and polarized far-field Raman spectroscopy confirm the strained epitaxial growth on all used substrates. Polarization-dependent Co L2 ,3 x-ray absorption spectroscopy reveals a change of the magnetic easy axis of the antiferromagnetically ordered (high-spin) Co3 + sublattice within the strain series. By reversing the applied strain direction from tensile to compressive, the easy axis changes abruptly from in-plane to out-of-plane orientation. The low-temperature magnetoresistance changes its sign respectively and is described by a combination of weak antilocalization and anisotropic magnetoresistance effects.

Scanning Tunneling Microscopy Study on Dirac Nodal-line Semimetal ZrSiS

NASA Astrophysics Data System (ADS)

Su, Chih-Chuan; Guan, Syu-You; Wang, Tzu-Cheng; Sankar, Raman; Guo, Guang-Yu; Chou, Fangcheng; Chang, Chia-Seng; Chuang, Tien-Ming

The discovery of 3D Dirac nodal-line protected by non-symmophic symmetry in ZrSiS family has been reported by angle resolved photoemission spectroscopy (ARPES) and quantum oscillation measurements. ZrSiS also exhibits a butterfly shaped titanic angular magnetoresistance and strong Zeeman splitting in quantum oscillation. These observations with its layered crystal structure make the ZrSiS family an interesting candidate to understand the novel properties of the nodal-line semimetals. Here, we study the electronic structures of the single crystal ZrSiS by using spectroscopic-imaging scanning tunneling microscope at T= 4.2K. Our quasiparticle scattering interference imaging reveals the characteristic wave vectors with linear dispersion from Dirac line nodes in the bulk and its surface states. Our results are in excellent agreement with the first principle calculation, and also in consistent with ARPES and quantum oscillation measurements.

Giant magnetoelastic spin-flop with magnetocrystalline instability in La1.4Sr1.6Mn2O7

NASA Astrophysics Data System (ADS)

Ko, K.-T.; Jang, H.; Kim, D.-H.; Park, B.-G.; Kim, J.-Y.; Kim, S. B.; Oh, Y.-S.; Cheong, S.-W.; Park, J.-H.

2018-01-01

We studied a low-field giant magnetostrictive spin-flop transition in a colossal magnetoresistance manganite La1.4Sr1.6Mn2O7 using resonant soft x-ray diffraction and soft x-ray absorption spectroscopy at the Mn L2 ,3 edge. The spin-flop transition is induced by an instability of magnetocrystalline anisotropy near a critical eg orbital configuration with a balanced occupation in dx2-y2 and d3 z2-r2 states, which contribute in-plane and out-of-plane orbital angular momenta, respectively. The magnetic field drives a certain change in the orbital occupation with lattice distortion to switch the magnetic anisotropy, resulting in the spin-flop transition. These results provide a comprehensive mechanism of interplay between spin, orbital, and lattice degrees of freedom to realize a low-field giant magnetoelasticity.

Magnetoresistance in two-dimensional array of Ge/Si quantum dots

NASA Astrophysics Data System (ADS)

Stepina, N. P.; Koptev, E. S.; Pogosov, A. G.; Dvurechenskii, A. V.; Nikiforov, A. I.; Zhdanov, E. Yu

2012-07-01

Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization approach with suggestion that quantum interference contribution to the conductance is restricted not only by the phase breaking length but also by the localization length.

Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

DOE PAGES

Wang, Zhuo; Samaraweera, R. L.; Reichl, C.; ...

2016-12-07

Electron-heating induced by a tunable, supplementary dc-current (I dc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing Idc, yielding negative giant-magnetoresistance at the lowest temperature and highest I dc. A two-term Drude model successfully fits the data at all Idc and T. The results indicate that carrier heating modifies a conductivity correction σ 1, which undergoes sign reversal from positive to negative with increasing I dc, and this is responsible for the observed crossover from positive-more » to negative- magnetoresistance, respectively, at the highest B.« less

Recent Developments of Magnetoresistive Sensors for Industrial Applications

PubMed Central

Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

2015-01-01

The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling). PMID:26569263

Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

NASA Astrophysics Data System (ADS)

Prarokijjak, Worasak; Soodchomshom, Bumned

2018-04-01

Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galbiati, Marta; Tatay, Sergio; Delprat, Sophie

2015-02-23

Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffusemore » through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al{sub 2}O{sub 3}/Alq{sub 3}/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working “organic” and short-circuited junctions fabricated on the same wafer.« less

Electronic structure, irreversibility line and magnetoresistance of Cu 0.3Bi 2Se 3 superconductor

DOE PAGES

Hemian, Yi; Gu, Genda; Chen, Chao -Yu; ...

2015-06-01

Cu xBi 2Se 3 is a superconductor that is a potential candidate for topological superconductors. We report our laser-based angle-resolved photoemission measurement on the electronic structure of the Cu xBi 2Se 3 superconductor, and a detailed magneto-resistance measurement in both normal and superconducting states. We find that the topological surface state of the pristine Bi 2Se 3 topological insulator remains robust after the Cu-intercalation, while the Dirac cone location moves downward due to electron doping. Detailed measurements on the magnetic field-dependence of the resistance in the superconducting state establishes an irreversibility line and gives a value of the upper criticalmore » field at zero temperature of ~4000 Oe for the Cu 0.3Bi 2Se 3 superconductor with a middle point T c of 1.9K. The relation between the upper critical field Hc2 and temperature T is different from the usual scaling relation found in cuprates and in other kinds of superconductors. Small positive magneto-resistance is observed in Cu 0.3Bi 2Se 3 superconductors up to room temperature. As a result, these observations provide useful information for further study of this possible candidate for topological superconductors.« less

Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnS b2

NASA Astrophysics Data System (ADS)

Yi, Changjiang; Yang, Shuai; Yang, Meng; Wang, Le; Matsushita, Yoshitaka; Miao, Shanshan; Jiao, Yuanyuan; Cheng, Jinguang; Li, Yongqing; Yamaura, Kazunari; Shi, Youguo; Luo, Jianlin

2017-11-01

Single crystals of EuMnS b2 were successfully grown and their structural and electronic properties were investigated systematically. The material crystallizes in an orthorhombic-layered structure (space group: Pnma, No. 62) comprising a periodic sequence of -MnSb/Eu/Sb/Eu/- layers (˜1 nm in thickness), and massless fermions are expected to emerge in the Sb layer, by analogy of the candidate Dirac materials EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi). The magnetic and specific heat measurements of EuMnS b2 suggest an antiferromagnetic ordering of Eu moments near 20 K. A characteristic hump appears in the temperature-dependent electrical resistivity curve at ˜25 K . A spin-flop transition of Eu moments with an onset magnetic field of ˜15 kOe (at 2 K) was observed. Interestingly, EuMnS b2 shows a negative magnetoresistance (up to -95 % ) in contrast to the positive magnetoresistances observed for EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi), providing a unique opportunity to study the correlation between electronic and magnetic properties in this class of materials.

Evolution of structural, electronic and magneto-transport properties of Sr2Ir1-xTixO4 5d based oxide

NASA Astrophysics Data System (ADS)

Bhatti, Imtiaz Noor; Pramanik, A. K.

2018-05-01

To investigate the effect of chemical doping on structural and transport properties in Sr2IrO4, in this study we have doped Ti4+ (3d0) at Ir4+ (5d5) site. Thus Ti doping introduces hole in the electronic band moreover, it also weaken the spin orbital coupling (SOC) and enhance electronic correlation (U). We have prepared the polycrystalline samples of Sr2Ir1-xTixO4 with x = 0.0 0.05 and 0.10 with solid state reaction method. Single phase and chemically pure samples were obtained. All samples crystalizes in tetragonal structure and I41/acd symmetry. The structural analysis shows the evolution of lattice parameter with doping. The temperature dependent resistivity is measured using four probe technique down in the temperature range 5 K-300 K. The resistivity increases with Ti doping. Temperature dependency of resistivity is explained by thermal activated 2-dimensional Mott Variable Hopping range model. To further understand the transport behavior both temperature and field dependent magneto-resistance is also studied. Negative magneto-resistance (MR) has been observed for all samples at 50 K. The MR shows quadratic field dependence at high field, implies a relevance of a quantum interference effect in this spin orbital coupled insulator.

Dualism of the 5f electrons of the ferromagnetic superconductor UGe2 as seen in magnetic, transport, and specific-heat data

NASA Astrophysics Data System (ADS)

Troć, R.; Gajek, Z.; Pikul, A.

2012-12-01

Single-crystalline UGe2 was investigated by means of magnetic susceptibility, magnetization, electrical resistivity, magnetoresistivity, and specific-heat measurements, all carried out in wide temperature and magnetic-field ranges. An analysis of the obtained data points out the dual behavior of the 5f electrons in this compound, i.e., possessing simultaneously local and itinerant characters in two substates. The magnetic and thermal characteristics of the compound were modeled using the effective crystal field (CF) in the intermediate coupling scheme and initial parameters obtained in the angular overlap model. Various configurations of the localized 5fn (n = 1, 2, and 3) electrons on the uranium ion have been probed. The best results were obtained for the 5f2 (U4+) configuration. The CF parameters obtained in the paramagnetic region allowed us to reproduce satisfactorily the experimental findings in the whole temperature range including also the magnitude of the ordered magnetic moment of uranium at low temperature. The electrical resistivity data after subtraction of the phonon contribution reveal the presence of a Kondo-like interaction in UGe2 supporting the idea of partial localization of the 5f electrons in UGe2. On the other hand, magnetoresistivity and an excess of specific heat originated from the hybridized (itinerant) part of 5f states, apparent around the characteristic temperature T*, give a distinct signature for the presence of the coupled charge-density wave and spin-density wave fluctuations over all the ferromagnetic region with a maximum at T*, postulated earlier in the literature.

A study of angular dependence in the ablation rate of polymers by nanosecond pulses

NASA Astrophysics Data System (ADS)

Pedder, James E. A.; Holmes, Andrew S.

2006-02-01

Measurements of ablation rate have traditionally been carried out only at normal incidence. However, in real-world applications ablation is often carried out at oblique angles, and it is useful to have prior knowledge of the ablation rate in this case. Detailed information about the angular dependence is also important for the development of ablation simulation tools, and can provide additional insight into the ablation mechanism. Previously we have reported on the angular dependence of direct-write ablation at 266 nm wavelength in solgel and polymer materials. In this paper we present a systematic study of angular dependence for excimer laser ablation of two polymer materials of interest for microfabrication: polycarbonate and SU8 photoresist. The results are used to improve simulation models to aid in mask design.

Giant magnetoresistance (GMR) behavior of electrodeposited NiFe/Cu multilayers: Dependence of non-magnetic and magnetic layer thicknesses

NASA Astrophysics Data System (ADS)

Kuru, Hilal; Kockar, Hakan; Alper, Mursel

2017-12-01

Giant magnetoresistance (GMR) behavior in electrodeposited NiFe/Cu multilayers was investigated as a function of non-magnetic (Cu) and ferromagnetic (NiFe) layer thicknesses, respectively. Prior to the GMR analysis, structural and magnetic analyses of the multilayers were also studied. The elemental analysis of the multilayers indicated that the Cu and Ni content in the multilayers increase with increasing Cu and NiFe layer thickness, respectively. The structural studies by X-ray diffraction revealed that all multilayers have face centred cubic structure with preferred (1 1 0) crystal orientation as their substrates. The magnetic properties studied with the vibrating sample magnetometer showed that the magnetizations of the samples are significantly affected by the layer thicknesses. Saturation magnetisation, Ms increases from 45 to 225 emu/cm3 with increasing NiFe layer thickness. The increase in the Ni content of the multilayers with a small Fe content causes an increase in the Ms. And, the coercivities ranging from 2 to 24 Oe are between the soft and hard magnetic properties. Also, the magnetic easy axis of the multilayers was found to be in the film plane. Magnetoresistance measurements showed that all multilayers exhibited the GMR behavior. The GMR magnitude increases with increasing Cu layer thickness and reaches its maximum value of 10% at the Cu layer thickness of 1 nm, then it decreases. And similarly, the GMR magnitude increases and reaches highest value of pure GMR (10%) for the NiFe layer thickness of 3 nm, and beyond this point GMR decreases with increasing NiFe layer thickness. Some small component of the anisotropic magnetoresistance was also observed at thin Cu and thick NiFe layer thicknesses. It is seen that the highest GMR values up to 10% were obtained in electrodeposited NiFe/Cu multilayers up to now. The structural, magnetic and magnetoresistance properties of the NiFe/Cu were reported via the variations of the thicknesses of Cu and NiFe layers with stressing the role of layer thicknesses on the high GMR behavior.

Texture in steel plates revealed by laser ultrasonic surface acoustic waves velocity dispersion analysis.

PubMed

Yin, Anmin; Wang, Xiaochen; Glorieux, Christ; Yang, Quan; Dong, Feng; He, Fei; Wang, Yanlong; Sermeus, Jan; Van der Donck, Tom; Shu, Xuedao

2017-07-01

A photoacoustic, laser ultrasonics based approach in an Impulsive Stimulated Scattering (ISS) implementation was used to investigate the texture in polycrystalline metal plates. The angular dependence of the 'polycrystalline' surface acoustic wave (SAW) velocity measured along regions containing many grains was experimentally determined and compared with simulated results that were based on the angular dependence of the 'single grain' SAW velocity within single grains and the grain orientation distribution. The polycrystalline SAW velocities turn out to vary with texture. The SAW velocities and their angular variations for {110} texture were found to be larger than that the ones for {111} texture or the strong γ fiber texture. The SAW velocities for {001} texture were larger than for {111} texture, but with almost the same angular dependence. The results infer the feasibility to apply angular SAW angular dispersion measurements by laser ultrasonics for on-line texture monitoring. Copyright © 2017 Elsevier B.V. All rights reserved.

Angular dependence of spin-orbit spin-transfer torques

NASA Astrophysics Data System (ADS)

Lee, Ki-Seung; Go, Dongwook; Manchon, Aurélien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin

2015-04-01

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Energy-dependent angular shifts in the photoelectron momentum distribution for atoms in elliptically polarized laser pulses

NASA Astrophysics Data System (ADS)

Xie, Hui; Li, Min; Luo, Siqiang; Li, Yang; Zhou, Yueming; Cao, Wei; Lu, Peixiang

2017-12-01

We measure the photoelectron momentum distributions from atoms ionized by strong elliptically polarized laser fields at the wavelengths of 400 and 800 nm, respectively. The momentum distributions show distinct angular shifts, which sensitively depend on the electron energy. We find that the deflection angle with respect to the major axis of the laser ellipse decreases with the increase of the electron energy for large ellipticities. This energy-dependent angular shift is well reproduced by both numerical solutions of the time-dependent Schrödinger equation and the classical-trajectory Monte Carlo model. We show that the ionization time delays among the electrons with different energies are responsible for the energy-dependent angular shifts. On the other hand, for small ellipticities, we find the deflection angle increases with increasing the electron energy, which might be caused by electron rescattering in the elliptically polarized fields.

An efficient biosensor made of an electromagnetic trap and a magneto-resistive sensor.

PubMed

Li, Fuquan; Kosel, Jürgen

2014-09-15

Magneto-resistive biosensors have been found to be useful because of their high sensitivity, low cost, small size, and direct electrical output. They use super-paramagnetic beads to label a biological target and detect it via sensing the stray field. In this paper, we report a new setup for magnetic biosensors, replacing the conventional "sandwich" concept with an electromagnetic trap. We demonstrate the capability of the biosensor in the detection of E. coli. The trap is formed by a current-carrying microwire that attracts the magnetic beads into a sensing space on top of a tunnel magneto-resistive sensor. The sensor signal depends on the number of beads in the sensing space, which depends on the size of the beads. This enables the detection of biological targets, because such targets increase the volume of the beads. Experiments were carried out with a 6 µm wide microwire, which attracted the magnetic beads from a distance of 60 μm, when a current of 30 mA was applied. A sensing space of 30 µm in length and 6 µm in width was defined by the magnetic sensor. The results showed that individual E. coli bacterium inside the sensing space could be detected using super-paramagnetic beads that are 2.8 µm in diameter. The electromagnetic trap setup greatly simplifies the device and reduces the detection process to two steps: (i) mixing the bacteria with magnetic beads and (ii) applying the sample solution to the sensor for measurement, which can be accomplished within about 30 min with a sample volume in the µl range. This setup also ensures that the biosensor can be cleaned easily and re-used immediately. The presented setup is readily integrated on chips via standard microfabrication techniques. Copyright © 2014 Elsevier B.V. All rights reserved.

Tunneling spin polarization in planar tunnel junctions: measurements using NbN superconducting electrodes and evidence for Kondo-assisted tunneling

NASA Astrophysics Data System (ADS)

Yang, Hyunsoo

2006-03-01

The fundamental origin of tunneling magnetoresistance in magnetic tunnel junctions (MTJs) is the spin-polarized tunneling current, which can be measured directly using superconducting tunneling spectroscopy (STS). The STS technique was first developed by Meservey and Tedrow using aluminum superconducting electrodes. Al has been widely used because of its low spin orbit scattering. However, measurements must be made at low temperatures (<0.4 K) because of the low superconducting transition temperature of Al. Here, we demonstrate that superconducting electrodes formed from NbN can be used to measure tunneling spin polarization (TSP) at higher temperatures up to ˜1.2K. The tunneling magnetoresistance and polarization of the tunneling current in MTJs is highly sensitive to the detailed structure of the tunneling barrier. Using MgO tunnel barriers we find TSP values as high as 90% at 0.25K. The TMR is, however, depressed by insertion of ultra thin layers of both non-magnetic and magnetic metals in the middle of the MgO barrier. For ultra-thin, discontinuous magnetic layers of CoFe, we find evidence of Kondo assisted tunneling, from increased conductance at low temperatures (<50K) and bias voltage (<20 mV). Over the same temperature and bias voltage regimes the tunneling magnetoresistance is strongly depressed. We present other evidence of Kondo resonance including the logarithmic temperature dependence of the zero bias conductance peak. We infer the Kondo temperature from both the spectra width of this conductance peak as well as the temperature dependence of the TMR depression. The Kondo temperature is sensitive to the thickness of the inserted CoFe layer and decreases with increased CoFe thickness. * performed in collaboration with S-H. Yang, C. Kaiser, and S. Parkin.

Spin-glass and variable range hopping quantum interference magnetoresistance in FeSr2Y1.3Ce0.7Cu2O10-x

NASA Astrophysics Data System (ADS)

Sambale, S.; Williams, G. V. M.; Stephen, J.; Chong, S. V.

2014-12-01

Electronic transport and magnetic measurements have been made on FeSr2Y1.3Ce0.7Cu2O10-x. We observe a spin-glass at ˜23 K and a magnetoresistance that reaches -22% at 8 T. The magnetoresistance is due to variable range hopping quantum interference where at low temperatures each hop is over a large number of scatterers. This magnetoresistance is negative at and above 5 K and can be described by the Nguen, Spivak, and Shklovskii (NSS) model. However, there is an increasingly positive contribution to the magnetoresistance for temperatures below 5 K that may be due to scattering from localized free spins during each hop that is not accounted for in the NSS model.

Room temperature magneto-transport properties of nanocomposite Fe-In2O3 thin films

NASA Astrophysics Data System (ADS)

Tambasov, Igor A.; Gornakov, Kirill O.; Myagkov, Victor G.; Bykova, Liudmila E.; Zhigalov, Victor S.; Matsynin, Alexey A.; Yozhikova, Ekaterina V.

2015-12-01

A ferromagnetic Fe-In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe-In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe-In2O3 thin film had n=1.94·1020 cm-3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~-0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.

High-temperature interlayer magnetoresistance in La5Mo4O16

NASA Astrophysics Data System (ADS)

Kobayashi, K.; Katsufuji, T.

2011-03-01

We found that La5Mo4O16 with Mo4+ and Mo5+ ions (S=1 and S=1/2 spins) on a quasisquare lattice exhibits a distinct magnetoresistance for the current perpendicular to the square-lattice layers below the antiferromagnetic ordering temperature TAF=190 K. This magnetoresistance occurs well below 1 T, and can be attributed to a metamagnetic transition from antiferromagnetically aligned moments between the layers to ferromagnetically aligned ones. The magnetoresistance changes its characteristic with the change of the magnetic state below TF=70 K, where spontaneous magnetization appears.

Angular-domain scattering interferometry.

PubMed

Shipp, Dustin W; Qian, Ruobing; Berger, Andrew J

2013-11-15

We present an angular-scattering optical method that is capable of measuring the mean size of scatterers in static ensembles within a field of view less than 20 μm in diameter. Using interferometry, the method overcomes the inability of intensity-based models to tolerate the large speckle grains associated with such small illumination areas. By first estimating each scatterer's location, the method can model between-scatterer interference as well as traditional single-particle Mie scattering. Direct angular-domain measurements provide finer angular resolution than digitally transformed image-plane recordings. This increases sensitivity to size-dependent scattering features, enabling more robust size estimates. The sensitivity of these angular-scattering measurements to various sizes of polystyrene beads is demonstrated. Interferometry also allows recovery of the full complex scattered field, including a size-dependent phase profile in the angular-scattering pattern.

Stripe domains and magnetoresistance in thermally deposited nickel films

NASA Astrophysics Data System (ADS)

Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.

2004-05-01

We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.

First-principles spin-transfer torque in CuMnAs |GaP |CuMnAs junctions

NASA Astrophysics Data System (ADS)

Stamenova, Maria; Mohebbi, Razie; Seyed-Yazdi, Jamileh; Rungger, Ivan; Sanvito, Stefano

2017-02-01

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronic device with potential high-frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunneling magnetoresistance. Calculations are performed for CuMnAs |GaP |CuMnAs junctions with different surface terminations between the antiferromagnetic CuMnAs electrodes and the insulating GaP spacer. We find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface.

Electrical probing of field-driven cascading quantized transitions of skyrmion cluster states in MnSi nanowires

NASA Astrophysics Data System (ADS)

Du, Haifeng; Liang, Dong; Jin, Chiming; Kong, Lingyao; Stolt, Matthew J.; Ning, Wei; Yang, Jiyong; Xing, Ying; Wang, Jian; Che, Renchao; Zang, Jiadong; Jin, Song; Zhang, Yuheng; Tian, Mingliang

2015-07-01

Magnetic skyrmions are topologically stable whirlpool-like spin textures that offer great promise as information carriers for future spintronic devices. To enable such applications, particular attention has been focused on the properties of skyrmions in highly confined geometries such as one-dimensional nanowires. Hitherto, it is still experimentally unclear what happens when the width of the nanowire is comparable to that of a single skyrmion. Here, we achieve this by measuring the magnetoresistance in ultra-narrow MnSi nanowires. We observe quantized jumps in magnetoresistance versus magnetic field curves. By tracking the size dependence of the jump number, we infer that skyrmions are assembled into cluster states with a tunable number of skyrmions, in agreement with the Monte Carlo simulations. Our results enable an electric reading of the number of skyrmions in the cluster states, thus laying a solid foundation to realize skyrmion-based memory devices.

Magnetic-proximity-induced magnetoresistance on topological insulators

NASA Astrophysics Data System (ADS)

Chiba, Takahiro; Takahashi, Saburo; Bauer, Gerrit E. W.

2017-03-01

We theoretically study the magnetoresistance (MR) of two-dimensional massless Dirac electrons as found on the surface of three-dimensional topological insulators (TIs) that are capped by a ferromagnetic insulator (FI). We calculate charge and spin transport by Kubo and Boltzmann theories, taking into account the ladder-vertex correction and the in-scattering due to normal and magnetic disorder. The induced exchange splitting is found to generate an electric conductivity that depends on the magnetization orientation, but its form is very different from both the anisotropic and the spin Hall MR. The in-plane MR vanishes identically for nonmagnetic disorder, while out-of-plane magnetizations cause a large MR ratio. On the other hand, we do find an in-plane MR and planar Hall effect in the presence of magnetic disorder aligned with the FI magnetization. Our results may help us understand recent transport measurements on TI |FI systems.

Layered magnetic structures: Antiferromagnetic-type interlayer coupling and magnetoresistance due to antiparallel alignment

NASA Astrophysics Data System (ADS)

Grünberg, P.; Demokritov, S.; Fuss, A.; Vohl, M.; Wolf, J. A.

1991-04-01

Layered Fe/Cr structures are known to display antiferromagnetic-type interlayer coupling and a new magnetoresistance (MR) effect due to antiparallel magnetization alignment. The strength of the coupling is found to be similar in multilayered structures and in double layers. The oscillatory behavior of the coupling, previously found by Parkin, More, and Roche [Phys. Rev. Lett. 64, 2304 (1990)] on sputtered polycrystalline samples, is here confirmed for epitaxial samples, obtained by thermal evaporation. The new MR effect is interpreted as due to a spin-dependent scattering of the electrons at the Fe-Cr interfaces. The investigations have been extended to Fe/V, Fe/Mn, Fe/Cu, Co/Au, Co/Cr, and Co/Cu structures where the antiparallel alignment of the ferromagnetic layers is obtained via hysteresis effects. A MR effect due to antiparallel alignment, which is strong for Co/Au and Co/Cu but weak in the other cases, has been found.

Magnetoresistance effect in permalloy nanowires with various types of notches

NASA Astrophysics Data System (ADS)

Gao, Y.; You, B.; Wang, J.; Yuan, Y.; Wei, L. J.; Tu, H. Q.; Zhang, W.; Du, J.

2018-05-01

Suppressing the stochastic domain wall (DW) motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated the pinning/depinning processes of DWs in permalloy nanowires with three different types of notches by using longitudinal magnetoresistance (MR) measurement. The averaged MR curves demonstrate that the stochastic DW depinning is suppressed partly or even completely by a transversely asymmetric notch. The single-shot MR curves show that how the resistance changes with the applied field also depends strongly on the notch type while the DW is pinned around the notch. In the case of two depinning fields, larger (smaller) change of resistance always corresponds to larger (smaller) depinning field, regardless of the notch type. These phenomena can be understood by that the spin structure around the notch changes differently with the notch type when the DW is traveling through the notch.

Spin effects in transport through single-molecule magnets in the sequential and cotunneling regimes

NASA Astrophysics Data System (ADS)

Misiorny, Maciej; Weymann, Ireneusz; Barnaś, Józef

2009-06-01

We analyze the stationary spin-dependent transport through a single-molecule magnet weakly coupled to external ferromagnetic leads. Using the real-time diagrammatic technique, we calculate the sequential and cotunneling contributions to current, tunnel magnetoresistance, and Fano factor in both linear and nonlinear response regimes. We show that the effects of cotunneling are predominantly visible in the blockade regime and lead to enhancement of tunnel magnetoresistance (TMR) above the Julliere value, which is accompanied with super-Poissonian shot noise due to bunching of inelastic cotunneling processes through different virtual spin states of the molecule. The effects of external magnetic field and the role of type and strength of exchange interaction between the LUMO level and the molecule’s spin are also considered. When the exchange coupling is ferromagnetic, we find an enhanced TMR, while in the case of antiferromagnetic coupling we predict a large negative TMR effect.

Disorder-dominated linear magnetoresistance in topological insulator Bi2Se3 thin films

NASA Astrophysics Data System (ADS)

Wang, Wen Jie; Gao, Kuang Hong; Li, Qiu Lin; Li, Zhi-Qing

2017-12-01

The linear magnetoresistance (MR) effect is an interesting topic due to its potential applications. In topological insulator Bi2Se3, this effect has been reported to be dominated by the carrier mobility (μ) and hence has a classical origin. Here, we study the magnetotransport properties of Bi2Se3 thin films and observe the linear MR effect, which cannot be attributed to the quantum model. Unexpectedly, the linear MR does not show the linear dependence on μ, in conflict with the reported results. However, we find that the observed linear MR is dominated by the inverse disorder parameter 1 /kFl , where kF and l are the Fermi wave vector and the mean free path, respectively. This suggests that its origin is also classical and that no μ-dominated linear MR effect is observed which may be due to the very small μ values in our samples.

Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin Chains

NASA Astrophysics Data System (ADS)

Rolf-Pissarczyk, Steffen; Yan, Shichao; Malavolti, Luigi; Burgess, Jacob A. J.; McMurtrie, Gregory; Loth, Sebastian

2017-11-01

We present the appearance of negative differential resistance (NDR) in spin-dependent electron transport through a few-atom spin chain. A chain of three antiferromagnetically coupled Fe atoms (Fe trimer) was positioned on a Cu2 N /Cu (100 ) surface and contacted with the spin-polarized tip of a scanning tunneling microscope, thus coupling the Fe trimer to one nonmagnetic and one magnetic lead. Pronounced NDR appears at the low bias of 7 mV, where inelastic electron tunneling dynamically locks the atomic spin in a long-lived excited state. This causes a rapid increase of the magnetoresistance between the spin-polarized tip and Fe trimer and quenches elastic tunneling. By varying the coupling strength between the tip and Fe trimer, we find that in this transport regime the dynamic locking of the Fe trimer competes with magnetic exchange interaction, which statically forces the Fe trimer into its high-magnetoresistance state and removes the NDR.

Spin-filtering and giant magnetoresistance effects in polyacetylene-based molecular devices

NASA Astrophysics Data System (ADS)

Chen, Tong; Yan, Shenlang; Xu, Liang; Liu, Desheng; Li, Quan; Wang, Lingling; Long, Mengqiu

2017-07-01

Using the non-equilibrium Green's function formalism in combination with density functional theory, we performed ab initio calculations of spin-dependent electron transport in molecular devices consisting of a polyacetylene (CnHn+1) chain vertically attached to a carbon chain sandwiched between two semi-infinite zigzag-edged graphene nanoribbon electrodes. Spin-charge transport in the device could be modulated to different magnetic configurations by an external magnetic field. The results showed that single spin conduction could be obtained. Specifically, the proposed CnHn+1 devices exhibited several interesting effects, including (dual) spin filtering, spin negative differential resistance, odd-even oscillation, and magnetoresistance (MR). Marked spin polarization with a filtering efficiency of up to 100% over a large bias range was found, and the highest MR ratio for the CnHn+1 junctions reached 4.6 × 104. In addition, the physical mechanisms for these phenomena were also revealed.

Novel specific heat and magnetoresistance behavior of Tb0.5Ho0.5Mn2Si2

NASA Astrophysics Data System (ADS)

Pandey, Swati; Siruguri, V.; Rawat, R.

2018-04-01

In this report, we study temperature dependent heat capacity and electrical resistance of Tb1-xHoxMn2Si2 (x = 0.5). Two successive low temperature magnetic transitions T1 (˜15 K) and T2 (˜25 K) are observed from both measurements. Anomalous rise in heat capacity at low temperatures is ascribed to the nuclear Schottky effect. Sommerfeld coefficient (γ), Debye temperature (θD) and density of states at Fermi level N(EF) is calculated from the zero field specific heat data. We observe 4f contribution to heat capacity from T1 to 100K, which is attributed to crystal field effect. In the electrical transport study, application of the magnetic field shows a substantial change around the ordering temperature of rare earth moment resulting in large positive magnetoresistance of about 20% with field change of 6T.

Spin-controlled negative magnetoresistance resulting from exchange interactions

NASA Astrophysics Data System (ADS)

Agrinskaya, N. V.; Kozub, V. I.; Mikhailin, N. Yu.; Shamshur, D. V.

2017-04-01

We studied conductivity of AlGaAs-GaAs quantum well structures (where centers of the wells were doped by Be) at temperatures higher than 4 K in magnetic fields up 10 T. Throughout all the temperature region considered the conductivity demonstrated activated behavior. At moderate magnetic fields 0.1 T < H < 1 T, we observed negative isotropic magnetoresistance, which was linear in magnetic field while for magnetic field normal with respect to the plane of the wells the magnetoresistance was positive at H > 2T. To the best of our knowledge, it was the first observation of linear negative magnetoresistance, which would be isotropic with respect to the direction of magnetic field. While the isotropic character of magnetoresistance apparently evidences role of spins, the existing theoretical considerations concerning spin effects in conductance fail to explain our experimental results. We believe that such a behavior can be attributed to spin effects supported by exchange interactions between localized states.

Effect of quantum tunneling on spin Hall magnetoresistance

NASA Astrophysics Data System (ADS)

Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

2017-02-01

We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y3Fe5O12) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

High speed magneto-resistive random access memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

1992-01-01

A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

NASA Astrophysics Data System (ADS)

Alekseev, P. S.; Dmitriev, A. P.; Gornyi, I. V.; Kachorovskii, V. Yu.; Narozhny, B. N.; Titov, M.

2018-02-01

Ultrapure conductors may exhibit hydrodynamic transport where the collective motion of charge carriers resembles the flow of a viscous fluid. In a confined geometry (e.g., in ultra-high-quality nanostructures), the electronic fluid assumes a Poiseuille-type flow. Applying an external magnetic field tends to diminish viscous effects leading to large negative magnetoresistance. In two-component systems near charge neutrality, the hydrodynamic flow of charge carriers is strongly affected by the mutual friction between the two constituents. At low fields, the magnetoresistance is negative, however, at high fields the interplay between electron-hole scattering, recombination, and viscosity results in a dramatic change of the flow profile: the magnetoresistance changes its sign and eventually becomes linear in very high fields. This nonmonotonic magnetoresistance can be used as a fingerprint to detect viscous flow in two-component conducting systems.

Angular dependence of dose sensitivity of nanoDot optically stimulated luminescent dosimeters in different radiation geometries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jursinic, Paul A., E-mail: pjursinic@wmcc.org

2015-10-15

Purpose: A type of in vivo dosimeter, an optically stimulated luminescent dosimeter, OSLD, may have dose sensitivity that depends on the angle of incidence of radiation. This work measures how angular dependence of a nanoDot changes with the geometry of the phantom in which irradiation occurs and with the intrinsic structure of the nanoDot. Methods: The OSLDs used in this work were nanoDot dosimeters (Landauer, Inc., Glenwood, IL), which were read with a MicroStar reader (Landauer, Inc., Glenwood, IL). Dose to the OSLDs was delivered by 6 MV x-rays. NanoDots with various intrinsic sensitivities were irradiated in numerous phantoms thatmore » had geometric shapes of cylinders, rectangles, and a cube. Results: No angular dependence was seen in cylindrical phantoms, cubic phantoms, or rectangular phantoms with a thickness to width ratio of 0.3 or 1.5. An angular dependence of 1% was observed in rectangular phantoms with a thickness to width of 0.433–0.633. A group of nanoDots had sensitive layers with mass density of 2.42–2.58 g/cm{sup 3} and relative sensitivity of 0.92–1.09 and no difference in their angular dependence. Within experimental uncertainty, nanoDot measurements agree with a parallel-plate ion chamber at a depth of maximum dose. Conclusions: When irradiated in cylindrical, rectangular, and cubic phantoms, nanoDots show a maximum angular dependence of 1% or less at an incidence angle of 90°. For a sample of 78 new nanoDots, the range of their relative intrinsic sensitivity is 0.92–1.09. For a sample of ten nanoDots, on average, the mass in the sensitive layer is 73.1% Al{sub 2}O{sub 3}:C and 26.9% polyester. The mass density of the sensitive layer of a nanoDot disc is between 2.42 and 2.58 g/cm{sup 3}. The angular dependence is not related to Al{sub 2}O{sub 3}:C loading of the nanoDot disc. The nanoDot at the depth of maximum dose has no more angular dependence than a parallel-plate ion chamber.« less

Tunnelling anisotropic magnetoresistance at La{sub 0.67}Sr{sub 0.33}MnO{sub 3}-graphene interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phillips, L. C., E-mail: lee.phillips@cantab.net; Yan, W.; Kar-Narayan, S.

2016-03-14

Using ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La{sub 0.67}Sr{sub 0.33}MnO{sub 3}-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

Using granular C0-AI2O3 spacer for optimization of functional parameters of the FeMn/Fe20Ni80 magnetoresistive films

NASA Astrophysics Data System (ADS)

Gorkovenko, A. N.; Lepalovskij, V. N.; Adanakova, O. A.; Vas'kovskiy, V. O.

2016-03-01

In this paper we studied the possibility of tailoring the functional properties of the multilayer magnetoresistive medium with unidirectional anisotropy and the anisotropic magnetoresistance effect (AMR). Objects of the research were composite Co-Al2O3 films and Ta/Fe20Ni80/Fe50Mn50/Fe20Ni80/Co-Al2O3/Fe20Ni80/Ta multilayers structures obtained by magnetron sputtering and selectively subjected vacuum annealing. Structure, magnetic and magnetoresistive properties of the films in the temperature range 77÷440 K were investigated.

Impurity-induced tuning of quantum-well States in spin-dependent resonant tunneling.

PubMed

Kalitsov, Alan; Coho, A; Kioussis, Nicholas; Vedyayev, Anatoly; Chshiev, M; Granovsky, A

2004-07-23

We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization, and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWSs), which depends on the impurity potential, impurity position, and the symmetry of the QWS. Copyright 2004 The American Physical Society

Current-direction dependence of the transport properties in single-crystalline face-centered-cubic cobalt films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, X.; Liang, J. H.; Chen, B. L.

2015-07-28

Face-centered-cubic cobalt films are epitaxially grown on insulating LaAlO{sub 3}(001) substrates by molecular beam epitaxy. Transport measurements are conducted in different current directions relative to the crystal axes. We find that the temperature dependent anisotropic magnetoresistance ratio strongly depends on the current direction. However, the anomalous Hall effect shows isotropic behavior independent of the current direction. Our results demonstrate the interplay between the current direction and the crystalline lattice in single-crystalline ferromagnetic films. A phenomenological analysis is presented to interpret the experimental data.

Magnetoresistors as a tool for investigating the mechanical properties of ferromagnetic materials

NASA Astrophysics Data System (ADS)

Kaleta, Jerzy; Tumański, Slawomir; Żebracki, Jacek

1996-07-01

We have investigated the possibility of applying the Villari effect for measurements of the dependence of deformation on the external loading. The magnetic field arising due to the deformation has been measured with a Permalloy magnetoresistive sensor. The plot of the dependence of the external field H on the strain ɛ agrees almost perfectly with the classical dependence σ = f( ɛ) in tensile tests. In steel and nickel samples stress changes in the range 0-500 MPa were accompanied by changes in the external magnetic field in the range 0-300 A/m.

Study of subband electronic structure of Si δ-doped GaAs using magnetotransport measurements in tilted magnetic fields

NASA Astrophysics Data System (ADS)

Li, G.; Hauser, N.; Jagadish, C.; Antoszewski, J.; Xu, W.

1996-06-01

Si δ-doped GaAs grown by metal organic vapor phase epitaxy (MOVPE) is characterized using magnetotransport measurements in tilted magnetic fields. Angular dependence of the longitudinal magnetoresistance (Rxx) vs the magnetic field (B) traces in tilted magnetic fields is used to examine the existence of a quasi-two-dimensional electron gas. The subband electron densities (ni) are obtained applying fast Fourier transform (FFT) analysis to the Rxx vs B trace and using mobility spectrum (MS) analysis of the magnetic field dependent Hall data. Our results show that (1) the subband electron densities remain roughly constant when the tilted magnetic field with an angle <30° measured from the Si δ-doped plane normal is ramped up to 13 T; (2) FFT analysis of the Rxx vs B trace and MS analysis of the magnetic field dependent Hall data both give the comparable results on subband electron densities of Si δ-doped GaAs with low δ-doping concentration, however, for Si δ-doped GaAs with very high δ-doping concentration, the occupation of the lowest subbands cannot be well resolved in the MS analysis; (3) the highest subband electron mobility reported to date of 45 282 cm2/s V is observed in Si δ-doped GaAs at 77 K in the dark; and (4) the subband electron densities of Si δ-doped GaAs grown by MOVPE at 700 °C are comparable to those grown by MBE at temperatures below 600 °C. A detailed study of magnetotransport properties of Si δ-doped GaAs in the parallel magnetic fields is then carried out to further confirm the subband electronic structures revealed by FFT and MS analysis. Our results are compared to theoretical calculation previously reported in literature. In addition, influence of different cap layer structures on subband electronic structures of Si δ-doped GaAs is observed and also discussed.

Switching effects and spin-valley Andreev resonant peak shifting in silicene superconductor

NASA Astrophysics Data System (ADS)

Soodchomshom, Bumned; Niyomsoot, Kittipong; Pattrawutthiwong, Eakkarat

2018-03-01

The magnetoresistance and spin-valley transport properties in a silicene-based NM/FB/SC junction are investigated, where NM, FB and SC are normal, ferromagnetic and s-wave superconducting silicene, respectively. In the FB region, perpendicular electric and staggered exchange fields are applied. The quasiparticles may be described by Dirac Bogoliubov-de Gennes equation due to Cooper pairs formed by spin-valley massive fermions. The spin-valley conductances are calculated based on the modified Blonder-Tinkham-Klapwijk formalism. We find the spin-valley dependent Andreev resonant peaks in the junction shifted by applying exchange field. Perfect conductance switch generated by interplay of intrinsic spin orbit interaction and superconducting gap has been predicted. Spin and valley polarizations are almost linearly dependent on biased voltage near zero bias and then turn into perfect switch at biased voltage approaching the superconducting gap. The perfect switching of large magnetoresistance has been also predicted at biased energy near the superconducting gap. These switching effects may be due to the presence of spin-valley Andreev resonant peak near the superconducting gap. Our work reveals potential of silicene as applications of electronic switching devices and linear control of spin and valley polarizations.

Temperature dependence of the domain wall magneto-Seebeck effect: avoiding artifacts of lead contributions

NASA Astrophysics Data System (ADS)

Fernández Scarioni, Alexander; Krzysteczko, Patryk; Sievers, Sibylle; Hu, Xiukun; Schumacher, Hans W.

2018-06-01

We study the resistive and thermopower signatures of a single domain wall in a magnetic nanowire in the temperature range from 4 K to 204 K. The results are compared to the anisotropic magnetoresistance (AMR) and anisotropic magneto-Seebeck (AMS) data of the whole permalloy nanowire. The AMS ratio of the nanowire reveals a sign change at a temperature of 98 K, while the AMR ratio is positive over the complete temperature range. This behavior is also observed for the domain wall, allowing an attribution of the measured signatures to the domain wall magneto-Seebeck and domain wall magnetoresistive contributions. However, the observed zero crossing of the AMS ratio, in both types of measurements is not expected for permalloy, since the Mott formula predicts a temperature dependency of the AMS identical to the AMR. We discuss the origin of this behavior and can attribute it to the contributions of the lead and the protective platinum layer used in our devices. A correction scheme is presented and applied. Such contributions could also play a role in the analysis of magneto-Seebeck effects in other nanoscale devices, such as the tunnel magneto-Seebeck effect of magnetic tunnel junctions.

Highly anisotropic magneto-transport and field orientation dependent oscillations in aligned carbon nanotube/epoxy composites

NASA Astrophysics Data System (ADS)

Wells, Brian; Kumar, Raj; Reynolds, C. Lewis; Peters, Kara; Bradford, Philip D.

2017-12-01

Carbon nanotubes (CNTs) have been widely investigated as additive materials for composites with potential applications in electronic devices due to their extremely large electrical conductivity and current density. Here, highly aligned CNT composite films were created using a sequential layering fabrication technique. The degree of CNT alignment leads to anisotropic resistance values which varies >400× in orthogonal directions. Similarly, the magnetoresistance (MR) of the CNT composite differs depending upon the relative direction of current and the applied magnetic field. A suppression of negative to positive MR crossover was also observed. More importantly, an overall positive magnetoresistance behavior with localized +/- oscillations was discovered at low fields which persists up to room temperature when the current (I) and in-plane magnetic field (B) were parallel to the axis of CNT (B∥I∥CNT), which is consistent with Aharonov-Bohm oscillations in our CNT/epoxy composites. When the current, applied magnetic field, and nanotube axis are aligned, the in-plane MR is positive instead of negative as observed for all other field, current, and tube orientations. Here, we provide in-depth analysis of the conduction mechanism and anisotropy in the magneto-transport properties of these aligned CNT-epoxy composites.

Transport Measurements on NEODYMIUM(1.85) CERIUM(.15) Copper OXYGEN(4-DELTA) Thin Films

NASA Astrophysics Data System (ADS)

Kussmaul, Andreas

1992-01-01

This work describes the synthesis and the study of the transport properties of thin films of Nd _{1.85}Ce_{.15 }CuO_{4-delta} carried out respectively at the IBM T. J. Watson Research Center in collaboration with Dr. A. Gupta, and at the Francis Bitter National Magnet Laboratory under the direction of Dr. P. M. Tedrow. The thin films were prepared by laser ablation of a stoichiometric target on heated substrates in a reactive ambient. The influence of the deposition parameters was studied, and the use of a nitreous oxide ambient was found to yield a clear improvement of the sample quality. The transport properties of the films were measured at low temperatures and in high magnetic fields. Non superconducting samples showed a strong, highly anisotropic, negative magnetoresistance that is consistent with two dimensional weak-localization. Superconducting samples show two dimensional fluctuation effects above T_{c}. The theory of fluctuations in a magnetic field was used to extract the position of H_{c2} (in the perpendicular direction) in the broad and almost featureless resistive transition, and the extracted values were fit to the theory of dirty superconductors. The angular dependence of the resistive transition was studied close to T _{c} and found to be somewhat better described by a two-dimensional model. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.).

Samarium Hexaboride: The First True 3D Topological Insulator?

NASA Astrophysics Data System (ADS)

Wolgast, Steven G.

The recent theoretical prediction of a topologically protected surface state in the mixed-valent insulator SmB6 has motivated a series of charge transport studies, which are presented here. It is first studied using a specialized configuration designed to distinguish bulk-dominated conduction from surface-dominated conduction. As the material is cooled below 4 K, it exhibits a crossover from thermally activated bulk transport to metallic surface conduction with a fully insulating bulk. The robustness and magnitude of the surface conductivity, as is manifest in the literature of SmB6, is strong evidence for the topological insulator (TI) metallic surface states predicted for this material. This resolves a decades-old puzzle surrounding the low-temperature behavior of SmB6. Next, the magnetotransport properties of the surface are investigated using a Corbino disk geometry, which can directly measure the conductivity of individual surfaces. Both (011) and (001) crystal surfaces show a strong negative magnetoresistance at all magnetic field angles, due primarily to changes in the carrier density. The low mobility value accounts for the failure so far to observe Shubnikov-de Haas oscillations below 95 T. Small variations in the mobility and temperature dependence suggest a suppression of Kondo scattering from native oxide-layer magnetic moments. At low fields, a dynamical field-sweep-rate-dependent hysteretic behavior is observed. It persists at the slowest sweep rates, and cannot be explained by quantum interference corrections; it is likely due to extrinsic effects such as the magnetocaloric effect or glassy ordering of the native oxide moments. Pulsed magnetic field measurements up to 60 T at temperatures throughout the crossover regime clearly distinguish the surface magnetoresistance from the bulk magnetoresistance. The bulk magnetoresistance is due to a reduction in the bulk gap with increasing magnetic field. Finally, small subsurface cracks formed in SmB6 via systematic scratching or sanding results in a counter-intuitive increase in the electrical conduction due to the unique surface-conducting property of TIs, strengthening the building case for SmB 6's topological nature. This material is attractive as a TI because its bulk is fully insulating at a readily achieved 2 K, but it presents a large number of scientific mysteries and experimental challenges for future research.

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

PubMed Central

Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P.

2014-01-01

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials. PMID:24810663

Positive magnetoresistance effect in rare earth cobaltites

NASA Astrophysics Data System (ADS)

Troyanchuk, I. O.; Bushinskii, M. V.; Karpinsky, D. V.; Dobryanskii, V. M.; Sikolenko, V. V.; Balagurov, A. M.

2009-06-01

The structure, magnetic, and magnetotransport properties of the Pr0.5Sr0.5Co1 - x Fe x O3 system have been studied. The ferromagnet-spin glass ( x = 0.5)- G-type antiferromagnet ( x = 0.7) transitions and the metal—insulator transitions ( x = 0.25) have been revealed. It has been established that the magnetoresistance of the metallic ferromagnetic cobaltites changes sign from positive to negative as the external magnetic field increases. The positive component increases and the negative component decreases with decreasing temperature. The negative magnetoresistance increases sharply in the insulating spinglass phase. Possible causes of the low-magnetic-field positive magnetoresistance in the rare earth metallic cobaltites are discussed.

Magnetoresistance in organic semiconductors: Including pair correlations in the kinetic equations for hopping transport

NASA Astrophysics Data System (ADS)

Shumilin, A. V.; Kabanov, V. V.; Dediu, V. I.

2018-03-01

We derive kinetic equations for polaron hopping in organic materials that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide a self-consistent framework for the description of the bipolaron mechanism of the organic magnetoresistance. At low applied voltages, the equations can be reduced to those for an effective resistor network that generalizes the Miller-Abrahams network and includes the effect of spin relaxation on the system resistivity. Our theory discloses the close relationship between the organic magnetoresistance and the intersite correlations. Moreover, in the absence of correlations, as in an ordered system with zero Hubbard energy, the magnetoresistance vanishes.

Effect of post annealing on spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, Ajay, E-mail: ajay1.tiwari@toshiba.co.jp; Inokuchi, Tomoaki; Ishikawa, Mizue

The post annealing temperature dependence of spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator were investigated. The spin signals were detected using 3- and 4-terminal Hanle, 2-terminal local and 4-terminal nonlocal magnetoresistance measurements. The post annealing temperature (T{sub A}) dependence of the magnitude in 3-terminal narrow Hanle signals is nearly constant up to T{sub A} < 400°C, however a slight decrease above T{sub A} ≥ 400°C is observed. This behavior is consistent with the T{sub A} dependence of the magnitude of 4-terminal nonlocal magnetoresistance (MR) signals. The spin polarization estimated from the 3-terminal narrow Hanle signals andmore » the magnitude of 2-terminal local MR signals show a slight improvement with increasing post annealing temperature with a peak at around 325°C and then start reducing slowly. The slight increase in the spin signal would be due to high spin polarization of Co{sub 2}FeSi as a result of structural ordering. The 2-terminal local MR signals do not vary significantly by annealing between as-deposited and T{sub A} = 400°C, indicating the robustness of our device. This result would be useful for future Si spintronics devices.« less

Splitting efficiency and interference effects in a Cooper pair splitter based on a triple quantum dot with ferromagnetic contacts

NASA Astrophysics Data System (ADS)

Bocian, Kacper; Rudziński, Wojciech; Weymann, Ireneusz

2018-05-01

We theoretically study the spin-resolved subgap transport properties of a Cooper pair splitter based on a triple quantum dot attached to superconducting and ferromagnetic leads. Using the Keldysh Green's function formalism, we analyze the dependence of the Andreev conductance, Cooper pair splitting efficiency, and tunnel magnetoresistance on the gate and bias voltages applied to the system. We show that the system's transport properties are strongly affected by spin dependence of tunneling processes and quantum interference between different local and nonlocal Andreev reflections. We also study the effects of finite hopping between the side quantum dots on the Andreev current. This allows for identifying the optimal conditions for enhancing the Cooper pair splitting efficiency of the device. We find that the splitting efficiency exhibits a nonmonotonic dependence on the degree of spin polarization of the leads and the magnitude and type of hopping between the dots. An almost perfect splitting efficiency is predicted in the nonlinear response regime when the energies of the side quantum dots are tuned to the energies of the corresponding Andreev bound states. In addition, we analyzed features of the tunnel magnetoresistance (TMR) for a wide range of the gate and bias voltages, as well as for different model parameters, finding the corresponding sign changes of the TMR in certain transport regimes. The mechanisms leading to these effects are thoroughly discussed.

Strong influence of polaron-polaron interaction on the magnetoresistance effect in La0.7A0.3MnO3 thin films

NASA Astrophysics Data System (ADS)

Zhang, Haijuan; Wang, Kuidong; Zhang, Yuanyuan; Dong, Wenxia; Chen, Long; Tang, Xiaodong; Chen, Jie

2017-11-01

The colossal magnetoresistance effect endows La0.7A0.3MnO3 manganites distinctive fascination. Both theoretical and experimental studies demonstrated that the interplay among polarons could significantly influence magnetoresistance. However, the underlying microscopic mechanism of the influence remains elusive due to the lack of experimental evidences. Utilizing ultrafast optical spectroscopy to track the polaron dynamics around Curie temperatures, we observed a diverse two-step recovery process in three sibling manganite thin films with various magnetoresistance effects and Curie temperatures, while the slow step was proposed to be the formation evolution of correlated polarons through the polaron-polaron interaction. Polarons in La0.7Ca0.3MnO3 equilibrate much faster than those in La0.7(Ca0.58Sr0.42)0.3MnO3 and La0.7Sr0.3MnO3, indicating a comparatively tighter interaction between polarons and subsequently a stronger magnetoresistance effect.

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

NASA Astrophysics Data System (ADS)

Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration

The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.

Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

DOE PAGES

Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; ...

2016-10-14

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior wasmore » modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.« less

Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

NASA Astrophysics Data System (ADS)

Osabe, Keiichi; Kawai, Kotaro

2017-03-01

In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

Giant angular dependence of electromagnetic induced transparency in THz metamaterials

NASA Astrophysics Data System (ADS)

Liu, Changji; Huang, Yuanyuan; Yao, Zehan; Yu, Leilei; Jin, Yanping; Xu, Xinlong

2018-02-01

The giant electromagnetic induced transparency (EIT) phenomenon is observed in symmetrical metamaterials with angular dependence in the THz region. This is due to the asymmetrical electromagnetic field distribution on the surface of the metamaterials, which induces asymmetric current distribution. Blueshift with the increase of the unit cell period has been observed, which is due to the unusual electromagnetic interaction between units at oblique incidence. This EIT demonstrates an angular dependent high Q-factor, which is sensitive to the dielectric environment. The angle-induced EIT effect could pave the way for future tunable sensing applications in the THz region.

Scale dependencies of proton spin constituents with a nonperturbative αs

NASA Astrophysics Data System (ADS)

Jia, Shaoyang; Huang, Feng

2012-11-01

By introducing the contribution from dynamically generated gluon mass, we present a brand new parametrized form of QCD beta function to get an inferred limited running behavior of QCD coupling constant αs. This parametrized form is regarded as an essential factor to determine the scale dependencies of the proton spin constituents at the very low scale. In order to compare with experimental results directly, we work within the gauge-invariant framework to decompose the proton spin. Utilizing the updated next-to-next-leading-order evolution equations for angular momentum observables within a modified minimal subtraction scheme, we indicate that gluon contribution to proton spin cannot be ignored. Specifically, by assuming asymptotic limits of the total quark/gluon angular momentum valid, respectively, the scale dependencies of quark angular momentum Jq and gluon angular momentum Jg down to Q2˜1GeV2 are presented, which are comparable with the preliminary analysis of deeply virtual Compton scattering experiments by HERMES and JLab. After solving scale dependencies of quark spin ΔΣq, orbital angular momenta of quarks Lq are given by subtraction, presenting a holistic picture of proton spin partition within up and down quarks at a low scale.

A time-dependent neutron transport method of characteristics formulation with time derivative propagation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoffman, Adam J., E-mail: adamhoff@umich.edu; Lee, John C., E-mail: jcl@umich.edu

2016-02-15

A new time-dependent Method of Characteristics (MOC) formulation for nuclear reactor kinetics was developed utilizing angular flux time-derivative propagation. This method avoids the requirement of storing the angular flux at previous points in time to represent a discretized time derivative; instead, an equation for the angular flux time derivative along 1D spatial characteristics is derived and solved concurrently with the 1D transport characteristic equation. This approach allows the angular flux time derivative to be recast principally in terms of the neutron source time derivatives, which are approximated to high-order accuracy using the backward differentiation formula (BDF). This approach, called Sourcemore » Derivative Propagation (SDP), drastically reduces the memory requirements of time-dependent MOC relative to methods that require storing the angular flux. An SDP method was developed for 2D and 3D applications and implemented in the computer code DeCART in 2D. DeCART was used to model two reactor transient benchmarks: a modified TWIGL problem and a C5G7 transient. The SDP method accurately and efficiently replicated the solution of the conventional time-dependent MOC method using two orders of magnitude less memory.« less

Energy dependence and angular dependence of an optically stimulated luminescence dosimeter in the mammography energy range.

PubMed

Kawaguchi, Ai; Matsunaga, Yuta; Suzuki, Shoichi; Chida, Koichi

2017-03-01

This study aimed to investigate the energy dependence and the angular dependence of commercially available optically stimulated luminescence (OSL) point dosimeters in the mammography energy range. The energy dependence was evaluated to calculate calibration factors (CFs). The half-value layer range was 0.31-0.60 mmAl (Mo/Mo 22-28 kV, Mo/Rh 28-32 kV, and W/Rh 30-34 kV at 2-kV intervals). Mo/Rh 28 kV was the reference condition. Angular dependence was tested by rotating the X-ray tube from -90° to 90° in 30° increments, and signal counts from angled nanoDots were normalized to the 0° signal counts. Angular dependence was compared with three tube voltage and target/filter combinations (Mo/Mo 26 kV, Mo/Rh 28 kV and W/Rh 32 kV). The CFs of energy dependence were 0.94-1.06. In Mo/Mo 26-28 kV and Mo/Rh 28-32 kV, the range of CF was 0.99-1.01, which was very similar. For angular dependence, the most deteriorated normalized values (Mo/Mo, 0.37; Mo/Rh, 0.43; and W/Rh, 0.58) were observed when the X-ray tube was rotated at a 90° angle, compared to 0°. The most angular dependences of ± 30°, 60°, and 90° decreased by approximately 4%, 14%, and 63% respectively. The mean deteriorated measurement 30° intervals from 0° to ± 30° was 2%, from ± 30° to ± 60° was 8%, and from ± 60° to ± 90° was 40%. The range of energy dependence in typical mammography energy range was not as much as that in general radiography and computed tomography. For accurate measurement using nanoDot, the tilt needs to be under 30°. © 2017 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of Physicists in Medicine.

Electronic structure basis for the extraordinary magnetoresistance in WTe 2

DOE PAGES

Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; ...

2014-11-19

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior ofmore » the magnetoresistance in WTe₂ was identified.« less

Angular dependence of coercivity in isotropically aligned Nd-Fe-B sintered magnets

NASA Astrophysics Data System (ADS)

Matsuura, Yutaka; Nakamura, Tetsuya; Sumitani, Kazushi; Kajiwara, Kentaro; Tamura, Ryuji; Osamura, Kozo

2018-05-01

In order to understand the coercivity mechanism in Nd-Fe-B sintered magnets, the angular dependence of the coercivity of an isotropically aligned Nd15Co1.0B6Febal. sintered magnet was investigated through magnetization measurements using a vibrating sample magnetometer. These results are compared with the angular dependence calculated under the assumption that the magnetization reversal of each grain follows the Kondorskii law or, in other words, the 1/cos θ law for isotropic alignment distributions. The calculated angular dependence of the coercivity agrees very well with the experiment for magnetic fields applied between angles of 0 and 60°, and it is expected that the magnetization reversal occurs in each grain individually followed the 1/cos θ law. In contrast, this agreement between calculation and experiment is not found for anisotropic Nd-Fe-B samples. This implies that the coercivity of the aligned magnets depends upon the de-pinning of the domain walls from pinning sites. When the de-pinning occurs, it is expected that the domain walls are displaced through several grains at once.

Angular dependence of EWS time delay for photoionization of @Xe

NASA Astrophysics Data System (ADS)

Mandal, Ankur; Deshmukh, Pranawa; Kheifets, Anatoli; Dolmatov, Valeriy; Manson, Steven

2017-04-01

Interference between photoionization channels leads to angular dependence in photoionization time delay. Angular dependence is found to be a common effect for two-photon absorption experiments very recently. The effect of confinement on the time delay where each partial wave contributions to the ionization are studied. In this work we report angular dependence and confinement effects on Eisenbud-Wigner-Smith (EWS) time delay in atomic photoionization. Using and we computed the EWS time delay for free and confined Xe atom for photoionization from inner 4d3/2 and 4d5/2 and outer 5p1/2 and 5p3/2 subshells at various angles. The calculated EWS time delay is few tens to few hundreds of attoseconds (10-18 second). The photoionization time delay for @Xe follows that in the free Xe atom on which the confinement oscillations are built. The present work reveals the effect of confinement on the photoionization time delay at different angles between photoelectron ejection and the photon polarization.

Mechanism for Angular Deformation of L-shaped Specimens —Influence of Filling Material and Shrinkage Factor—

NASA Astrophysics Data System (ADS)

Furuhashi, Hiroshi; Aoki, Takerou; Okabe, Sayaka; Arai, Tsuyoshi; Seto, Masahiro; Yamabe, Masashi

L-shape is the important and fundamental shape for injection molded parts. Therefore to reveal the corner angular deformation mechanism of this shape is also valuable for understanding the warpage mechanism of injection molded parts. In this study, we investigated the influence of the filling materials (fiber, talc and not filled) and two kinds of anisotropic shrinkage factors, solidification shrinkage and shrinkage caused by thermal expansion coefficient during cooling, to the angular deformation of L-shaped specimens and the following conclusions were obtained 1) The anisotropic solidification shrinkage of MD/TD and the anisotropic thermal expansion coefficient of MD/TD are considered to cause the angular deformation of L-shaped specimens. But the contribution ratios of these two anisotropies depend on the filling material for plastics. 2) The angular deformation of PP and PBT filled with glass fiber is mainly caused by the anisotropic thermal expansion coefficient and on the other hand, that of PP and PBT without filling material is caused by anisotropic solidification shrinkage. However both anisotropies cause the angular deformation of PP filled with talc. 3) The plate thickness dependence of the angular deformation of PP filled with talc is the singular peculiar phenomenon. The plate thickness dependence of anisotropic solidification shrinkage of this material (it is also singular) is considered to have an important influence on this phenomenon.

The temperature dependence of inelastic light scattering from small particles for use in combustion diagnostic instrumentation

NASA Technical Reports Server (NTRS)

Cloud, Stanley D.

1987-01-01

A computer calculation of the expected angular distribution of coherent anti-Stokes Raman scattering (CARS) from micrometer size polystyrene spheres based on a Mie-type model, and a pilot experiment to test the feasibility of measuring CARS angular distributions from micrometer size polystyrene spheres by simply suspending them in water are discussed. The computer calculations predict a very interesting structure in the angular distributions that depends strongly on the size and relative refractive index of the spheres.

Colossal Terahertz Magnetoresistance at Room Temperature in Epitaxial La0.7Sr0.3MnO3 Nanocomposites and Single-Phase Thin Films.

PubMed

Lloyd-Hughes, J; Mosley, C D W; Jones, S P P; Lees, M R; Chen, A; Jia, Q X; Choi, E-M; MacManus-Driscoll, J L

2017-04-12

Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7 Sr 0.3 MnO 3 . At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: the mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. The VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.

Colossal terahertz magnetoresistance at room temperature in epitaxial La 0.7Sr 0.3MnO 3 nanocomposites and single-phase thin films

DOE PAGES

Lloyd-Hughes, James; Mosley, C. D. W.; Jones, S. P. P.; ...

2017-03-13

Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7Sr 0.3MnO 3. At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: themore » mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. As a result, the VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.« less

Magnetic Skyrmion as a Nonlinear Resistive Element: A Potential Building Block for Reservoir Computing

NASA Astrophysics Data System (ADS)

Prychynenko, Diana; Sitte, Matthias; Litzius, Kai; Krüger, Benjamin; Bourianoff, George; Kläui, Mathias; Sinova, Jairo; Everschor-Sitte, Karin

2018-01-01

Inspired by the human brain, there is a strong effort to find alternative models of information processing capable of imitating the high energy efficiency of neuromorphic information processing. One possible realization of cognitive computing involves reservoir computing networks. These networks are built out of nonlinear resistive elements which are recursively connected. We propose that a Skyrmion network embedded in magnetic films may provide a suitable physical implementation for reservoir computing applications. The significant key ingredient of such a network is a two-terminal device with nonlinear voltage characteristics originating from magnetoresistive effects, such as the anisotropic magnetoresistance or the recently discovered noncollinear magnetoresistance. The most basic element for a reservoir computing network built from "Skyrmion fabrics" is a single Skyrmion embedded in a ferromagnetic ribbon. In order to pave the way towards reservoir computing systems based on Skyrmion fabrics, we simulate and analyze (i) the current flow through a single magnetic Skyrmion due to the anisotropic magnetoresistive effect and (ii) the combined physics of local pinning and the anisotropic magnetoresistive effect.

Enhancement of magnetoresistance by hydrogen ion treatment for current-perpendicular-to-plane giant magnetoresistive films with a current-confined-path nano-oxide layer

NASA Astrophysics Data System (ADS)

Yuasa, H.; Hara, M.; Murakami, S.; Fuji, Y.; Fukuzawa, H.; Zhang, K.; Li, M.; Schreck, E.; Wang, P.; Chen, M.

2010-09-01

We have enhanced magnetoresistance (MR) for current-perpendicular-to-plane giant-magnetoresistive (CPP-GMR) films with a current-confined-path nano-oxide layer (CCP-NOL). In order to realize higher purity in Cu for CCPs, hydrogen ion treatment (HIT) was applied as the CuOx reduction process. By applying the HIT process, an MR ratio was increased to 27.4% even in the case of using conventional FeCo magnetic layer, from 13.0% for a reference without the HIT process. Atom probe tomography data confirmed oxygen reduction by the HIT process in the CCP-NOL. The relationship between oxygen counts and MR ratio indicates that further oxygen reduction would realize an MR ratio greater than 50%.

Anomalous electronic structure and magnetoresistance in TaAs2

NASA Astrophysics Data System (ADS)

Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

2016-06-01

The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.

Anomalous electronic structure and magnetoresistance in TaAs2

PubMed Central

Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

2016-01-01

The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions. PMID:27271852

Anisotropic kinetic energy release and gyroscopic behavior of CO2 super rotors from an optical centrifuge.

PubMed

Murray, Matthew J; Ogden, Hannah M; Mullin, Amy S

2017-10-21

An optical centrifuge is used to generate an ensemble of CO 2 super rotors with oriented angular momentum. The collision dynamics and energy transfer behavior of the super rotor molecules are investigated using high-resolution transient IR absorption spectroscopy. New multipass IR detection provides improved sensitivity to perform polarization-dependent transient studies for rotational states with 76 ≤ J ≤ 100. Polarization-dependent measurements show that the collision-induced kinetic energy release is spatially anisotropic and results from both near-resonant energy transfer between super rotor molecules and non-resonant energy transfer between super rotors and thermal molecules. J-dependent studies show that the extent and duration of the orientational anisotropy increase with rotational angular momentum. The super rotors exhibit behavior akin to molecular gyroscopes, wherein molecules with larger amounts of angular momentum are less likely to change their angular momentum orientation through collisions.

Anisotropic kinetic energy release and gyroscopic behavior of CO2 super rotors from an optical centrifuge

NASA Astrophysics Data System (ADS)

Murray, Matthew J.; Ogden, Hannah M.; Mullin, Amy S.

2017-10-01

An optical centrifuge is used to generate an ensemble of CO2 super rotors with oriented angular momentum. The collision dynamics and energy transfer behavior of the super rotor molecules are investigated using high-resolution transient IR absorption spectroscopy. New multipass IR detection provides improved sensitivity to perform polarization-dependent transient studies for rotational states with 76 ≤ J ≤ 100. Polarization-dependent measurements show that the collision-induced kinetic energy release is spatially anisotropic and results from both near-resonant energy transfer between super rotor molecules and non-resonant energy transfer between super rotors and thermal molecules. J-dependent studies show that the extent and duration of the orientational anisotropy increase with rotational angular momentum. The super rotors exhibit behavior akin to molecular gyroscopes, wherein molecules with larger amounts of angular momentum are less likely to change their angular momentum orientation through collisions.

On a relativistic particle and a relativistic position-dependent mass particle subject to the Klein–Gordon oscillator and the Coulomb potential

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitória, R.L.L.; Furtado, C., E-mail: furtado@fisica.ufpb.br; Bakke, K., E-mail: kbakke@fisica.ufpb.br

2016-07-15

The relativistic quantum dynamics of an electrically charged particle subject to the Klein–Gordon oscillator and the Coulomb potential is investigated. By searching for relativistic bound states, a particular quantum effect can be observed: a dependence of the angular frequency of the Klein–Gordon oscillator on the quantum numbers of the system. The meaning of this behaviour of the angular frequency is that only some specific values of the angular frequency of the Klein–Gordon oscillator are permitted in order to obtain bound state solutions. As an example, we obtain both the angular frequency and the energy level associated with the ground statemore » of the relativistic system. Further, we analyse the behaviour of a relativistic position-dependent mass particle subject to the Klein–Gordon oscillator and the Coulomb potential.« less

Rotating Hele-Shaw cell with a time-dependent angular velocity

NASA Astrophysics Data System (ADS)

Anjos, Pedro H. A.; Alvarez, Victor M. M.; Dias, Eduardo O.; Miranda, José A.

2017-12-01

Despite the large number of existing studies of viscous flows in rotating Hele-Shaw cells, most investigations analyze rotational motion with a constant angular velocity, under vanishing Reynolds number conditions in which inertial effects can be neglected. In this work, we examine the linear and weakly nonlinear dynamics of the interface between two immiscible fluids in a rotating Hele-Shaw cell, considering the action of a time-dependent angular velocity, and taking into account the contribution of inertia. By using a generalized Darcy's law, we derive a second-order mode-coupling equation which describes the time evolution of the interfacial perturbation amplitudes. For arbitrary values of viscosity and density ratios, and for a range of values of a rotational Reynolds number, we investigate how the time-dependent angular velocity and inertia affect the important finger competition events that traditionally arise in rotating Hele-Shaw flows.

In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure.

PubMed

Guo, Qi; Xu, Xiaoguang; Wang, Fang; Lu, Yunhao; Chen, Jikun; Wu, Yanjun; Meng, Kangkang; Wu, Yong; Miao, Jun; Jiang, Yong

2018-06-01

We report the in-plane electric field controlled ferromagnetism of La 2/3 Sr 1/3 MnO 3 (LSMO) films epitaxially deposited on [Pb(Mg 1/3 Nb 2/3 )O 3 ] 0.7 -(PbTiO 3 ) 0.3 (PMN-PT) (001), (011) and (111) single crystal substrates. The in-plane coercivities (H c∥ ) and remanences of the LSMO films greatly depend on the in-plane electric field applied on the PMN-PT (001) and (011) substrates. The experimental change of H c∥ is consistent with the Stoner-Wohlfarth model and first principle calculation with the electric field varying from -10 to 10 kV cm -1 . Moreover, the Curie temperature and anisotropic magnetoresistance of the LSMO films can also be manipulated by an in-plane electric field. Finally, the LSMO/PMN-PT (001) heterostructure is designed to be a new kind of magnetic signal generator with the source of electric field.

The role of solitons on the tunneling magnetoresistance through a double-stranded DNA molecule

NASA Astrophysics Data System (ADS)

Ashhadi, M.

2018-07-01

We have studied the role of solitons on the spin-dependent transport properties of through a double-stranded DNA (dsDNA) molecule attached to two the semi-infinite ferromagnetic (FM) electrodes. The work is based on a tight-binding Hamiltonian model within the framework of a generalized Green's function technique and relies on the Landauer-Bütikker formalism as the basis for studying the current-voltage characteristic of this system. The conductance properties of the spin system are studied for a ladder model for poly (dG)-poly (dC) DNA molecule. Our calculations indicate that the presence of a homogeneous distribution of the solitons along the molecular, as a sublattice of the correlated solitons, gives rise to significant enhancement in the density of states within the bandgap and large enhancement in conductance and the current-voltage characteristic. It is also shown that tunnel magnetoresistance (TMR) decreases in compared with TMR obtained in the absence of solitons.

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

NASA Technical Reports Server (NTRS)

Liu, S. Q.; Wu, N. J.; Ignatiev, A.

2001-01-01

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Bi-quadratic interlayer exchange coupling in Co{sub 2}MnSi/Ag/Co{sub 2}MnSi pseudo spin-valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goripati, Hari S.; Hono, K.; Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0047

2011-12-15

Bi-quadratic interlayer exchange coupling is found below 100 K in a Co{sub 2}MnSi/Ag/Co{sub 2}MnSi current-perpendicular-to-plane pseudo spin valves. The bi-quadratic coupling constant J{sub 2} was estimated to be {approx}-0.30 erg/cm{sup 2} at 5 K and the strong temperature dependence of the coupling strength points its likely origin to the ''loose spin'' model. Application of current of {approx}2 x 10{sup 7} A/cm{sup 2} below 100 K leads to an increase in the magnetoresistance (MR), indicating current induced antiparallel alignment of the two magnetic layers. These results strongly suggest that the presence of the bi-quadratic interlayer exchange coupling causes the reduction ofmore » the magnetoresistance at low temperature and illustrates the importance of understanding the influence of interlayer exchange coupling on magnetization configuration in magnetic nanostructures.« less

Effects of repetitive bending on the magnetoresistance of a flexible spin-valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, J.-H.; Kwak, W.-Y.; Cho, B. K., E-mail: chobk@gist.ac.kr

2015-05-07

A positive magnetostrictive single layer (CoFe) and top-pinned spin-valve structure with positive magnetostrictive free (NiFe) and pinned (CoFe) layers were deposited on flexible polyethylene terephthalate film to investigate the changes in the magnetic properties in flexible environments, especially with a repetitive bending process. It was found that the stress, applied by repetitive bending, changes significantly the magnetic anisotropy of both layers in a single and spin-valve structure depending on the direction of applied stress. The changes in magnetic anisotropy were understood in terms of the inverse magnetostriction effect (the Villari effect) and the elastic recovery force from the flexibility ofmore » the polymer substrate. Repetitive bending with tensile stress transverse (or parallel) to the magnetic easy axis was found to enhance (or reduce) the magnetic anisotropy and, consequently, the magnetoresistance ratio of a spin-valve. The observed effects of bending stress in this study should be considered for the practical applications of electro-magnetic devices, especially magneto-striction sensor.« less

Magnetization reversal mechanism of magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Liu, Cun-Ye; Li, Jian; Wang, Yue; Chen, Jian-Yong; Xu, Qing-Yu; Ni, Gang; Sang, Hai; Du, You-Wei

2002-01-01

Using the ion-beam-sputtering technique, we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs). We have observed double-peaked shapes of curves, which have a level summit and a symmetrical feature, showing the magnetoresistance of the junction as a function of applied field. We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses. We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance. The microstructures of hard- and soft-magnetic layers and interfaces of ferromagnets and insulators were probed. Analysing the influence of MJT microstructures, including those having clusters or/and granules in magnetic and non-magnetic films, a magnetization reversal mechanism (MRM) is proposed, which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles. We discuss the influence of MTJ microstructures, including those with clusters or/and granules in the ferromagnetic and non-magnetic films, on the MRM.

Simultaneous polarized neutron reflectometry and anisotropic magnetoresistance measurements.

PubMed

Demeter, J; Teichert, A; Kiefer, K; Wallacher, D; Ryll, H; Menéndez, E; Paramanik, D; Steitz, R; Van Haesendonck, C; Vantomme, A; Temst, K

2011-03-01

A novel experimental facility to carry out simultaneous polarized neutron reflectometry (PNR) and anisotropic magnetoresistance (AMR) measurements is presented. Performing both techniques at the same time increases their strength considerably. The proof of concept of this method is demonstrated on a CoO/Co bilayer exchange bias system. Although information on the same phenomena, such as the coercivity or the reversal mechanism, can be separately obtained from either of these techniques, the simultaneous application optimizes the consistency between both. In this way, possible differences in experimental conditions, such as applied magnetic field amplitude and orientation, sample temperature, magnetic history, etc., can be ruled out. Consequently, only differences in the fundamental sensitivities of the techniques can cause discrepancies in the interpretation between the two. The almost instantaneous information obtained from AMR can be used to reveal time-dependent effects during the PNR acquisition. Moreover, the information inferred from the AMR measurements can be used for optimizing the experimental conditions for the PNR measurements in a more efficient way than with the PNR measurements alone.

In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure

NASA Astrophysics Data System (ADS)

Guo, Qi; Xu, Xiaoguang; Wang, Fang; Lu, Yunhao; Chen, Jikun; Wu, Yanjun; Meng, Kangkang; Wu, Yong; Miao, Jun; Jiang, Yong

2018-06-01

We report the in-plane electric field controlled ferromagnetism of La2/3Sr1/3MnO3 (LSMO) films epitaxially deposited on [Pb(Mg1/3Nb2/3)O3]0.7-(PbTiO3)0.3 (PMN-PT) (001), (011) and (111) single crystal substrates. The in-plane coercivities (H c∥) and remanences of the LSMO films greatly depend on the in-plane electric field applied on the PMN-PT (001) and (011) substrates. The experimental change of H c∥ is consistent with the Stoner–Wohlfarth model and first principle calculation with the electric field varying from ‑10 to 10 kV cm‑1. Moreover, the Curie temperature and anisotropic magnetoresistance of the LSMO films can also be manipulated by an in-plane electric field. Finally, the LSMO/PMN-PT (001) heterostructure is designed to be a new kind of magnetic signal generator with the source of electric field.

Effect of the intrinsic spin-orbit interaction on the tunnel magnetoresistance in graphenelike nanoflakes

NASA Astrophysics Data System (ADS)

Weymann, Ireneusz; Krompiewski, Stefan

2016-12-01

This paper is devoted to examining the effect of intrinsic spin-orbit interaction on the possible appearance of edge magnetic moments and spin-dependent transport in graphenelike nanoflakes. In the case of finite-size graphenelike nanostructures it is shown that, on one hand, energetically the most advantageous configuration corresponds to magnetic moments located at zigzag edges with the in-plane antiferromagnetic inter-edge coupling. On the other hand, the tunnel magnetoresistance and the shot noise also have thoroughly been tested both for the in-plane configuration as well as for the out-of-plane one (for comparison reasons). Transport properties are described in terms of the mean-field Kane-Mele-Hubbard model with spin mixing correlations, supplemented by additional terms describing external leads, charging energy, and lead-nanostructure tunneling. The results show that Coulomb blockade stability spectra of graphenelike nanoflakes with ferromagnetic contacts provide information on both the intrinsic spin-orbit interaction and the expected edge magnetism.

Investigation of spin-dependent transports and microstructure in NiMnSb-based magnetoresistive devices

NASA Astrophysics Data System (ADS)

Qu, Guanxiong; Cheng, P.-H.; Du, Ye; Sakuraba, Yuya; Kasai, Shinya; Hono, Kazuhiro

2017-11-01

We have fabricated fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices using C1b-half Heusler compound NiMnSb, the first candidate of the half-metallic material, as the electrode with a Ag spacer. The device shows magnetoresistance ratios of 25% at 4.2 K and 9.6% at 290 K, which are one of the highest values for the CPP-GMR with half-Heusler compounds. However, these values are much lower compared to those reported for CPP-GMR devices with L21-full Heusler compounds. Careful analysis of the microstructure using scanning transmission electron microscopy and energy dispersive spectroscopy through the upper NiMnSb/Ag interface indicates the heterogeneous formation of Ag-rich solid solution or the island growth of Ag on top of NiMnSb, which clarified a difficulty in evaluating an intrinsic spin-polarization in NiMnSb from CPP-GMR devices. Thus, to evaluate a spin-polarization of a NiMnSb thin film, we fabricated non-local spin valve (NLSV) devices using NiMnSb with Cu channel wires, which is free from the diffusion of Cu to NiMnSb because of no annealing proccess after deposition of Cu. Finally, intrinsic spin polarization of the NiMnSb single layer was extrapolated to be around 50% from NLSV, suggesting a difficulty in obtaining half-metallic nature in the NiMnSb epitaxial thin film.

Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned L a 2 / 3 S r 1 / 3 Mn O 3 : ZnO nanopillar composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, W.; Lu, P.; Ihlefeld, J. F.

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La 2/3Sr 1/3MnO 3: ZnO nanocomposites, in which La 2/3Sr 1/3MnO 3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( Bmore » ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.« less

Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene

NASA Astrophysics Data System (ADS)

Asshoff, P. U.; Sambricio, J. L.; Rooney, A. P.; Slizovskiy, S.; Mishchenko, A.; Rakowski, A. M.; Hill, E. W.; Geim, A. K.; Haigh, S. J.; Fal'ko, V. I.; Vera-Marun, I. J.; Grigorieva, I. V.

2017-09-01

Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the most prominent class of spintronic devices widely used as magnetic sensors. In particular, few-layer graphene was predicted to act as a perfect spin filter. Here we show that the role of graphene in such devices (at least in the absence of epitaxial alignment between graphene and the FMs) is different and determined by proximity-induced spin splitting and charge transfer with adjacent ferromagnetic metals, making graphene a weak FM electrode rather than a spin filter. To this end, we report observations of magnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1-4 graphene layers separating the ferromagnets, and demonstrate that the dependence of the MR sign on the number of layers and its inversion at relatively small bias voltages is consistent with spin transport between weakly doped and differently spin-polarized layers of graphene. The proposed interpretation is supported by the observation of an MR sign reversal in biased Co-graphene-hBN-NiFe devices and by comprehensive structural characterization. Our results suggest a new architecture for vertical devices with electrically controlled MR.

Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures

NASA Astrophysics Data System (ADS)

Volkov, N. V.; Tarasov, A. S.; Rautskii, M. V.; Lukyanenko, A. V.; Bondarev, I. A.; Varnakov, S. N.; Ovchinnikov, S. G.

2018-04-01

Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.

Characteristic features of the magnetoresistance in the ferrimagnetic (Sr2FeMoO6-δ) - dielectric (SrMoO4) nanocomposite

NASA Astrophysics Data System (ADS)

Demyanov, S.; Kalanda, N.; Yarmolich, M.; Petrov, A.; Lee, S.-H.; Yu, S.-C.; Oh, S. K.; Kim, D.-H.

2018-05-01

Magnetic metal-oxide compounds with high values of magnetoresistance (MR) have attracted huge interest for spintronic applications, among which Sr2FeMoO6-δ (SFMO) has been relatively less known compared to the cobaltites and manganites, despite 100% electrons spin-polarization degree and a high Curie temperature. Here, stable fabrication and systematic analysis of nanocomposites based on SFMO with SrMoO4 dielectric sheaths are presented. SFMO-SrMoO4 nanocomposites were fabricated as follows: synthesis of the SFMO single-phase nanopowders by the modified citrate-gel technique; compaction under high pressure; thermal treatment for sheaths formation around grains. The nanocomposite is observed to exhibit a transitional behavior of conductivity from metallic, which is characteristic for the SFMO to semiconductor one in the temperature range 4 - 300K under magnetic fields up to 10T. A negative MR is observed due to the spin-polarized charge carriers tunneling through dielectric sheaths. MR value reaches 43% under 8T at 10κ. The dielectric sheaths thickness was determined to be about 10 nm by electric breakdown voltage value at current-voltage characteristics curves. The breakdown is found to be a reversible process determined by collisional ionization of dielectric atoms in strong electric field depending on knocked-out electrons from the SrMoO4. It was found that MR changes sign in electric breakdown region, revealing the giant magnetoresistive properties.

Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned L a 2 / 3 S r 1 / 3 Mn O 3 : ZnO nanopillar composites

DOE PAGES

Pan, W.; Lu, P.; Ihlefeld, J. F.; ...

2018-02-22

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La 2/3Sr 1/3MnO 3: ZnO nanocomposites, in which La 2/3Sr 1/3MnO 3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( Bmore » ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.« less

Short-range magnetic order, irreversibility and giant magnetoresistance near the triple points in the (x, T) magnetic phase diagram of ZrMn6Sn6-xGax

NASA Astrophysics Data System (ADS)

Mazet, T.; Ihou-Mouko, H.; Marêché, J.-F.; Malaman, B.

2010-04-01

We have studied pseudo-layered ZrMn6Sn6-xGax intermetallics (0.55 ≤ x ≤ 0.81) using magnetic, magnetoresistivity and powder neutron diffraction measurements. All the alloys studied have magnetic ordering temperatures in the 450-490 K temperature range. They present complex temperature-dependent partially disordered magnetic structures whose ferromagnetic component develops upon increasing the Ga content. ZrMn6Sn6-xGax alloys with x ≤ 0.69 are essentially collinear antiferromagnets at high-temperature and adopt antifan-like arrangements at low temperature. For x ≥ 0.75, the alloys order ferromagnetically and evolve to a fan-like structure upon cooling. The intermediate compositions (x = 0.71 and 0.73) present a canted fan-like order at high temperature and another kind of antifan-like arrangement at low temperature. The degree of short-range order tends to increase upon approaching the intermediate compositions. The (x, T) phase diagram contains two triple points (x ~ 0.70; T ~ 460 K and x ~ 0.74; T ~ 455 K), where the paramagnetic, an incommensurate and a commensurate phases meet, which possess some of the features of Lifshitz point. Irreversibilities manifest in the low-temperature magnetization curves at the antifan-fan or fan-ferromagnetic boundaries as well as inside the fan region. Giant magnetoresistance is observed, even above room temperature.

Random Resistor Network Model of Minimal Conductivity in Graphene

NASA Astrophysics Data System (ADS)

Cheianov, Vadim V.; Fal'Ko, Vladimir I.; Altshuler, Boris L.; Aleiner, Igor L.

2007-10-01

Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

Giant oscillating magnetoresistance in silicene-based structures

NASA Astrophysics Data System (ADS)

Oubram, O.; Navarro, O.; Rodríguez-Vargas, I.; Guzman, E. J.; Cisneros-Villalobos, L.; Velásquez-Aguilar, J. G.

2018-02-01

Ballistic electron transport in a silicene structure, composed of a pair of magnetic gates, in the ferromagnetic and an-tiferromagnetic configuration is studied. This theoretical study has been done using the matrix transfer method to calculate the transmission, the conductance for parallel and antiparallel magnetic alignment and the magnetoresistance. Results show that conductance and magnetoresistance oscillate as a function of the length between the two magnetic domains. The forbidden transmission region also increases as a function of the barrier separation distance.

Magnetic field effect on pentacene-doped sexithiophene diodes

NASA Astrophysics Data System (ADS)

Pham, Song-Toan; Fayolle, Marine; Ohto, Tatsuhiko; Tada, Hirokazu

2017-11-01

We studied the effect of impurities on the magnetoresistance of sexithiophene-based diodes using impedance spectroscopy. The impurities were introduced by doping pentacene molecules into a sexithiophene film through a co-evaporation process. The pentacene molecules act as charge-scattering centers, which trigger the negative magnetoresistance of the device. This makes it possible to tune the value of magnetoresistance from positive to negative by increasing the applied voltage. The beneficial properties induced by impurities suggest a potential route to integrate additional functions into organic devices.

Organic magnetoresistance based on hopping theory

NASA Astrophysics Data System (ADS)

Yang, Fu-Jiang; Xie, Shi-Jie

2014-09-01

For the organic magnetoresistance (OMAR) effect, we suggest a spin-related hopping of carriers (polarons) based on Marcus theory. The mobility of polarons is calculated with the master equation (ME) and then the magnetoresistance (MR) is obtained. The theoretical results are consistent with the experimental observation. Especially, the sign inversion of the MR under different driving bias voltages found in the experiment is predicted. Besides, the effects of molecule disorder, hyperfine interaction (HFI), polaron localization, and temperature on the MR are investigated.

Magnetoresistance and magnetization in submicron ferromagnetic gratings

NASA Astrophysics Data System (ADS)

Shearwood, C.; Blundell, S. J.; Baird, M. J.; Bland, J. A. C.; Gester, M.; Ahmed, H.; Hughes, H. P.

1994-05-01

A technique for engineering micron and submicron scale structures from magnetic films of transition metals has been developed using a combination of electron- and ion-beam lithography enabling high-quality arrays of submicron magnetic Fe wires to be fabricated. This process can be used to fabricate novel devices from a variety of metal combinations which would not be possible by the usual liftoff metallization method. The structure and magnetic properties are reported of an epitaxial 25 nm Fe(001)/GaAs(001) film and the wire gratings which are fabricated from it. The width of the wires in the grating is 0.5 μm for all structures studied, but the separation of each wire is varied in the range 0.5 to 16 μm. An artificially induced shape anisotropy field of around 1 kG, consistent with a magnetostatic calculation, was observed for all separations studied. The field dependence of the magneto-optic Kerr effect and magnetoresistance (MR) data is consistent with a twisted magnetization configuration across the width of the sample beneath saturation for transverse applied fields. In this case, the detailed form of the field dependence of the MR is strikingly modified from that observed in the continuous film and is consistent with coherent rotation of the magnetization.

MoTe2: An uncompensated semimetal with extremely large magnetoresistance

NASA Astrophysics Data System (ADS)

Thirupathaiah, S.; Jha, Rajveer; Pal, Banabir; Matias, J. S.; Das, P. Kumar; Sivakumar, P. K.; Vobornik, I.; Plumb, N. C.; Shi, M.; Ribeiro, R. A.; Sarma, D. D.

2017-06-01

Transition-metal dichalcogenides (WTe2 and MoTe2) have recently drawn much attention, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II Weyl semimetals. Contrary to the topological insulators or Dirac semimetals where XMR is linearly dependent on the field, in WTe2 and MoTe2 the XMR is nonlinearly dependent on the field, suggesting an entirely different mechanism. Electron-hole compensation has been proposed as a mechanism of this nonsaturating XMR in WTe2, while it is yet to be clear in the case of MoTe2 which has an identical crystal structure of WTe2 at low temperatures. In this Rapid Communication, we report low-energy electronic structure and Fermi surface topology of MoTe2 using angle-resolved photoemission spectrometry (ARPES) technique and first-principles calculations, and compare them with that of WTe2 to understand the mechanism of XMR. Our measurements demonstrate that MoTe2 is an uncompensated semimetal, contrary to WTe2 in which compensated electron-hole pockets have been identified, ruling out the applicability of charge compensation theory for the nonsaturating XMR in MoTe2. In this context, we also discuss the applicability of other existing conjectures on the XMR of these compounds.

Direct observation of temperature-driven magnetic symmetry transitions by vectorial resolved MOKE magnetometry

NASA Astrophysics Data System (ADS)

Cuñado, Jose Luis F.; Pedrosa, Javier; Ajejas, Fernando; Perna, Paolo; Miranda, Rodolfo; Camarero, Julio

2017-10-01

Angle- and temperature-dependent vectorial magnetometry measurements are necessary to disentangle the effective magnetic symmetry in magnetic nanostructures. Here we present a detailed study on an Fe(1 0 0) thin film system with competing collinear biaxial (four-fold symmetry) and uniaxial (two-fold) magnetic anisotropies, carried out with our recently developed full angular/broad temperature range/vectorial-resolved magneto-optical Kerr effect magnetometer, named TRISTAN. The data give direct views on the angular and temperature dependence of the magnetization reversal pathways, from which characteristic axes, remanences, critical fields, domain wall types, and effective magnetic symmetry are obtained. In particular, although the remanence shows four-fold angular symmetry for all investigated temperatures (15 K-400 K), the critical fields show strong temperature and angular dependencies and the reversal mechanism changes for specific angles at a given (angle-dependent) critical temperature, showing signatures of an additional collinear two-fold symmetry. This symmetry-breaking is more relevant as temperature increases to room temperature. It originates from the competition between two anisotropy contributions with different symmetry and temperature evolution. The results highlight the importance of combining temperature and angular studies, and the need to look at different magnetic parameters to unravel the underlying magnetic symmetries and temperature evolutions of the symmetry-breaking effects in magnetic nanostructures.

Angular dependence of the MOSFET dosimeter and its impact on in vivo surface dose measurement in breast cancer treatment.

PubMed

Qin, S; Chen, T; Wang, L; Tu, Y; Yue, N; Zhou, J

2014-08-01

The focus of this study is the angular dependence of two types of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeters (MOSFET20 and OneDose/OneDosePlus) when used for surface dose measurements. External beam radiationat different gantry angles were delivered to a cubic solid water phantom with a MOSFET placed on the top surface at CAX. The long axis of the MOSFET was oriented along the gantry axis of rotation, with the dosimeter (bubble side) facing the radiation source. MOSFET-measured surface doses were compared against calibrated radiochromic film readings. It was found that both types of MOSFET dosimeters exhibited larger than previously reported angular dependence when measuring surface dose in beams at large oblique angles. For the MOSFET20 dosimeter the measured surface dose deviation against film readings was as high as 17% when the incident angle was 72 degrees to the norm of the phantom surface. It is concluded that some MOSFET dosimeters may have a strong angular dependence when placed on the surface of water-equivalent material, even though they may have an isotropic angular response when surrounded by uniform medium. Extra on-surface calibration maybe necessary before using MOSFET dosimeters for skin dose measurement in tangential fields.

Stern-Gerlach-like approach to electron orbital angular momentum measurement

DOE PAGES

Harvey, Tyler R.; Grillo, Vincenzo; McMorran, Benjamin J.

2017-02-28

Many methods now exist to prepare free electrons into orbital-angular-momentum states, and the predicted applications of these electron states as probes of materials and scattering processes are numerous. The development of electron orbital-angular-momentum measurement techniques has lagged behind. We show that coupling between electron orbital angular momentum and a spatially varying magnetic field produces an angular-momentum-dependent focusing effect. We propose a design for an orbital-angular-momentum measurement device built on this principle. As the method of measurement is noninterferometric, the device works equally well for mixed, superposed, and pure final orbital-angular-momentum states. The energy and orbital-angular-momentum distributions of inelastically scattered electronsmore » may be simultaneously measurable with this technique.« less

Stern-Gerlach-like approach to electron orbital angular momentum measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, Tyler R.; Grillo, Vincenzo; McMorran, Benjamin J.

Many methods now exist to prepare free electrons into orbital-angular-momentum states, and the predicted applications of these electron states as probes of materials and scattering processes are numerous. The development of electron orbital-angular-momentum measurement techniques has lagged behind. We show that coupling between electron orbital angular momentum and a spatially varying magnetic field produces an angular-momentum-dependent focusing effect. We propose a design for an orbital-angular-momentum measurement device built on this principle. As the method of measurement is noninterferometric, the device works equally well for mixed, superposed, and pure final orbital-angular-momentum states. The energy and orbital-angular-momentum distributions of inelastically scattered electronsmore » may be simultaneously measurable with this technique.« less

Radially dependent angular acceleration of twisted light.

PubMed

Webster, Jason; Rosales-Guzmán, Carmelo; Forbes, Andrew

2017-02-15

While photons travel in a straight line at constant velocity in free space, the intensity profile of structured light may be tailored for acceleration in any degree of freedom. Here we propose a simple approach to control the angular acceleration of light. Using Laguerre-Gaussian modes as our twisted beams carrying orbital angular momentum, we show that superpositions of opposite handedness result in a radially dependent angular acceleration as they pass through a focus (waist plane). Due to conservation of orbital angular momentum, we find that propagation dynamics are complex despite the free-space medium: the outer part of the beam (rings) rotates in an opposite direction to the inner part (petals), and while the outer part accelerates, the inner part decelerates. We outline the concepts theoretically and confirm them experimentally. Such exotic structured light beams are topical due to their many applications, for instance in optical trapping and tweezing, metrology, and fundamental studies in optics.

Angular distribution of scission neutrons studied with time-dependent Schrödinger equation

NASA Astrophysics Data System (ADS)

Wada, Takahiro; Asano, Tomomasa; Carjan, Nicolae

2018-03-01

We investigate the angular distribution of scission neutrons taking account of the effects of fission fragments. The time evolution of the wave function of the scission neutron is obtained by integrating the time-dependent Schrodinger equation numerically. The effects of the fission fragments are taken into account by means of the optical potentials. The angular distribution is strongly modified by the presence of the fragments. In the case of asymmetric fission, it is found that the heavy fragment has stronger effects. Dependence on the initial distribution and on the properties of fission fragments is discussed. We also discuss on the treatment of the boundary to avoid artificial reflections

Pump/Probe Angular Dependence of Hanle Electromagnetically Induced Transparency

NASA Astrophysics Data System (ADS)

Jackson, Richard; Campbell, Kaleb; Crescimanno, Michael; Bali, Samir

2015-05-01

We investigate the dependence of Hanle Electromagnetically Induced Transparency (EIT) on angular separation between pump and probe field propagation directions in room-temperature Rb vapor. We observe the FWHM of the probe transmission spectrum and the amplitude of the EIT signal while varying the angular separation from 0 to 1 milliradian. Following the work of Ref., we examine potential applications in information storage and retrieval. We are grateful to Miami University for their generous financial support, and to the Miami University Instrumentation lab for their invaluable contributions.

The origin of dispersion of magnetoresistance of a domain wall spin valve

NASA Astrophysics Data System (ADS)

Sato, Jun; Matsushita, Katsuyoshi; Imamura, Hiroshi

2010-01-01

We theoretically study the current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nanocontact which is experimentally fabricated as current-confined-path (CCP) structure in a nano-oxide-layer (NOL). We solve the non-collinear spin diffusion equation by using the finite element method and calculate the MR ratio by evaluating the additional voltage drop due to the spin accumulation. We investigate the origin of dispersion of magnetoresistance by considering the effect of randomness of the size and distribution of the nanocontacts in the NOL. It is observed that the effect of randomness of the contact size is much larger than that of the contact distribution. Our results suggest that the origin of dispersion of magnetoresistance observed in the experiments is the randomness of the size of the nanocontacts in the NOL.

Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

PubMed

Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

2016-02-10

Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

Distinctive uniaxial magnetic anisotropy and positive magnetoresistance in (110)-oriented Fe3O4 films

NASA Astrophysics Data System (ADS)

Dho, Joonghoe; Kim, Byeong-geon; Ki, Sanghoon

2015-04-01

Magnetite (Fe3O4) films were synthesized on (110)-oriented MgO, MgAl2O4, and SrTiO3 substrates for comparative studies of the substrates' effects on magnetic and magnetoresistance properties of the films. For the [-110] direction, the hysteresis loops of the Fe3O4 film on MgAl2O4 exhibited a good squareness with the largest coercivity of ˜1090 Oe, and the ratio of remanent magnetization to saturation magnetization was ˜0.995. For the [001] direction, positive magnetoresistance in weak magnetic fields was most distinct for the (110) SrTiO3 substrate with the largest lattice mismatch. Positive magnetoresistance in the (110) Fe3O4 films was presumably affected by imperfect atomic arrangements at anti-phase boundaries.

Cr doping induced negative transverse magnetoresistance in C d3A s2 thin films

NASA Astrophysics Data System (ADS)

Liu, Yanwen; Tiwari, Rajarshi; Narayan, Awadhesh; Jin, Zhao; Yuan, Xiang; Zhang, Cheng; Chen, Feng; Li, Liang; Xia, Zhengcai; Sanvito, Stefano; Zhou, Peng; Xiu, Faxian

2018-02-01

The magnetoresistance of a material conveys various dynamic information about charge and spin carriers, inspiring both fundamental studies in physics and practical applications such as magnetic sensors, data storage, and spintronic devices. Magnetic impurities play a crucial role in the magnetoresistance as they induce exotic states of matter such as the quantum anomalous Hall effect in topological insulators and tunable ferromagnetic phases in dilute magnetic semiconductors. However, magnetically doped topological Dirac semimetals are hitherto lacking. Here, we report a systematic study of Cr-doped C d3A s2 thin films grown by molecular-beam epitaxy. With the Cr doping, C d3A s2 thin films exhibit unexpected negative transverse magnetoresistance and strong quantum oscillations, bearing a trivial Berry's phase and an enhanced effective mass. More importantly, with ionic gating the magnetoresistance of Cr-doped C d3A s2 thin films can be drastically tuned from negative to positive, demonstrating the strong correlation between electrons and the localized spins of the Cr impurities, which we interpret through the formation of magnetic polarons. Such a negative magnetoresistance under perpendicular magnetic field and its gate tunability have not been observed previously in the Dirac semimetal C d3A s2 . The Cr-induced topological phase transition and the formation of magnetic polarons in C d3A s2 provide insights into the magnetic interaction in Dirac semimetals as well as their potential applications in spintronics.

A contribution to calculation of the mathematical pendulum

NASA Astrophysics Data System (ADS)

Anakhaev, K. N.

2014-11-01

In this work, as a continuation of rigorous solutions of the mathematical pendulum theory, calculated dependences were obtained in elementary functions (with construction of plots) for a complete description of the oscillatory motion of the pendulum with determination of its parameters, such as the oscillation period, deviation angles, time of motion, angular velocity and acceleration, and strains in the pendulum rod (maximum, minimum, zero, and gravitational). The results of calculations according to the proposed dependences closely (≪1%) coincide with the exact tabulated data for individual points. The conditions of ascending at which the angular velocity, angular acceleration, and strains in the pendulum rod reach their limiting values equal to and 5 m 1 g, respectively, are shown. It was revealed that the angular acceleration does not depend on the pendulum oscillation amplitude; the pendulum rod strain equal to the gravitation force of the pendulum R s = m 1 g at the time instant is also independent on the amplitude. The dependences presented in this work can also be invoked for describing oscillations of a physical pendulum, mass on a spring, electric circuit, etc.

Angular-dependent Raman study of a- and s-plane InN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Filintoglou, K.; Katsikini, M., E-mail: katsiki@auth.gr; Arvanitidis, J.

2015-02-21

Angular-dependent polarized Raman spectroscopy was utilized to study nonpolar a-plane (11{sup ¯}20) and semipolar s-plane (101{sup ¯}1) InN epilayers. The intensity dependence of the Raman peaks assigned to the vibrational modes A{sub 1}(TO), E{sub 1}(TO), and E{sub 2}{sup h} on the angle ψ that corresponds to rotation around the growth axis, is very well reproduced by using expressions taking into account the corresponding Raman tensors and the experimental geometry, providing thus a reliable technique towards assessing the sample quality. The s- and a-plane InN epilayers grown on nitridated r-plane sapphire (Al{sub 2}O{sub 3}) exhibit good crystalline quality as deduced frommore » the excellent fitting of the experimental angle-dependent peak intensities to the theoretical expressions as well as from the small width of the Raman peaks. On the contrary, in the case of the s-plane epilayer grown on non-nitridated r-plane sapphire, fitting of the angular dependence is much worse and can be modeled only by considering the presence of two structural modifications, rotated so as their c-axes are almost perpendicular to each other. Although the presence of the second variant is verified by transmission electron and atomic force microscopies, angular dependent Raman spectroscopy offers a non-destructive and quick way for its quantification. Rapid thermal annealing of this sample did not affect the angular dependence of the peak intensities. The shift of the E{sub 1}(TO) and E{sub 2}{sup h} Raman peaks was used for the estimation of the strain state of the samples.« less

Spin-dependent transport through an interacting quantum dot.

PubMed

Zhang, Ping; Xue, Qi-Kun; Wang, Yupeng; Xie, X C

2002-12-31

We study the nonequilibrium spin transport through a quantum dot coupled to the magnetic electrodes. A formula for the spin-dependent current is obtained and is applied to discuss the linear conductance and magnetoresistance in the interacting regime. We show that the Kondo resonance and the correlation-induced spin splitting of the dot levels may be systematically controlled by internal magnetization in the electrodes. As a result, when the electrodes are in parallel magnetic configuration, the linear conductance is characterized by two spin-resolved peaks. Furthermore, the presence of the spin-flip process in the dot splits the Kondo resonance into three peaks.

Magnetoresistance of a nanostep junction based on topological insulators

NASA Astrophysics Data System (ADS)

Hu, Wei; Hong, Jin-Bin; Zhai, Feng

2018-06-01

We investigate ballistic transport of helical electrons in a three-dimensional topological insulator traversing a nanostep junction. We find that a magnetic field perpendicular to its side surface shrinks the phase space for transmission, leading to magnetoresistance for the Fermi energy close to the Dirac point of the top surface. We also find transmission resonances and suppression of the Fano factor due to Landau-level-related quasibound states. The transmission blockade in the off-resonance case can result in a huge magnetoresistance for Fermi energy higher than the Dirac point of the side surface.

Self-consistent study of local and nonlocal magnetoresistance in a YIG/Pt bilayer

NASA Astrophysics Data System (ADS)

Wang, Xi-guang; Zhou, Zhen-wei; Nie, Yao-zhuang; Xia, Qing-lin; Guo, Guang-hua

2018-03-01

We present a self-consistent study of the local spin Hall magnetoresistance (SMR) and nonlocal magnon-mediated magnetoresistance (MMR) in a heavy-metal/magnetic-insulator heterostructure at finite temperature. We find that the thermal fluctuation of magnetization significantly affects the SMR. It appears unidirectional with respect to the direction of electrical current (or magnetization). The unidirectionality of SMR originates from the asymmetry of creation or annihilation of thermal magnons induced by the spin Hall torque. Also, a self-consistent model can well describe the features of MMR.

Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mani, R. G.; Ramanayaka, A. N.; Wegscheider, W.

2013-12-04

We examine the linear polarization sensitivity of the radiation- induced magneto-resistance oscillations by investigating the effect of rotating in-situ the electric field of linearly polarized microwaves relative to the current, in the GaAs/AlGaAs system. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitude of the resistance oscillations are strongly sensitive to the relative orientation between the microwave antenna and the current-axis in the specimen.

High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Di-Cheng; Pan, You-Wei; Lin, Shih-Wei

2016-04-25

We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

Ferromagnetic phase in partially oxidized FeMn films

NASA Astrophysics Data System (ADS)

Svalov, A. V.; Savin, P. A.; Lepalovskij, V. N.; Vas'kovskiy, V. O.; Larrañaga, A.; Kurlyandskaya, G. V.

2018-04-01

The structure, magnetic and magnetoresistive properties of ferromagnetic phase in partially oxidized FeMn films was studied. The oxidation was performed by annealing of the samples under atmospheric pressure in a gas mixture (nitrogen with 0.5% oxygen) at the temperature of 300 °C. The resulting ferromagnetic phase was isotropic in the film plane. The value of the anisotropic magnetoresistance was similar to the value of the anisotropic magnetoresistance usually observed in films of pure iron. The oxidation of antiferromagnetic FeMn films resulted in the appearance of an exchange bias.

Insulating Behavior in Graphene with Irradiation-induced Lattice Defects

NASA Astrophysics Data System (ADS)

Chen, Jian-Hao; Williams, Ellen; Fuhrer, Michael

2010-03-01

We irradiated cleaned graphene on silicon dioxide in ultra-high vacuum with low energy inert gas ions to produce lattice defects [1], and investigated in detail the transition from metallic to insulating temperature dependence of the conductivity as a function of defect density. We measured the low field magnetoresistance and temperature-dependent resistivity in situ and find that weak localization can only account for a small correction of the resistivity increase with decreasing temperature. We will discuss possible origins of the insulating temperature dependent resistivity in defected graphene in light of our recent experiments. [4pt] [1] Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, PRL 102, 236805 (2009)

Influence of MgO barrier quality on spin-transfer torque in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Tiwari, Dhananjay; Sharma, Raghav; Heinonen, O. G.; Åkerman, Johan; Muduli, P. K.

2018-01-01

We studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.

Quadratic Finite Element Method for 1D Deterministic Transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tolar, Jr., D R; Ferguson, J M

2004-01-06

In the discrete ordinates, or SN, numerical solution of the transport equation, both the spatial ({und r}) and angular ({und {Omega}}) dependences on the angular flux {psi}{und r},{und {Omega}}are modeled discretely. While significant effort has been devoted toward improving the spatial discretization of the angular flux, we focus on improving the angular discretization of {psi}{und r},{und {Omega}}. Specifically, we employ a Petrov-Galerkin quadratic finite element approximation for the differencing of the angular variable ({mu}) in developing the one-dimensional (1D) spherical geometry S{sub N} equations. We develop an algorithm that shows faster convergence with angular resolution than conventional S{sub N} algorithms.

Eddy Current Probe for Surface and Sub-Surface Inspection

NASA Technical Reports Server (NTRS)

Wincheski, Russell A. (Inventor); Simpson, John W. (Inventor)

2014-01-01

An eddy current probe includes an excitation coil for coupling to a low-frequency alternating current (AC) source. A magneto-resistive sensor is centrally disposed within and at one end of the excitation coil to thereby define a sensing end of the probe. A tubular flux-focusing lens is disposed between the excitation coil and the magneto-resistive sensor. An excitation wire is spaced apart from the magneto-resistive sensor in a plane that is perpendicular to the sensor's axis of sensitivity and such that, when the sensing end of the eddy current probe is positioned adjacent to the surface of a structure, the excitation wire is disposed between the magneto-resistive sensor and the surface of the structure. The excitation wire is coupled to a high-frequency AC source. The excitation coil and flux-focusing lens can be omitted when only surface inspection is required.

Anomalous electronic structure and magnetoresistance in TaAs 2

DOE PAGES

Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; ...

2016-01-01

We report that the change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs 2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. In conclusion, density functional calculations find that TaAs 2 is a new topological semimetal [Z 2more » invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.« less

Synthesis and characterization of Copper/Cobalt/Copper/Iron nanostructurated films with magnetoresistive properties

NASA Astrophysics Data System (ADS)

Ciupinǎ, Victor; Prioteasa, Iulian; Ilie, Daniela; Manu, Radu; Petrǎşescu, Lucian; Tutun, Ştefan Gabriel; Dincǎ, Paul; MustaÅ£ǎ, Ion; Lungu, Cristian Petricǎ; Jepu, IonuÅ£; Vasile, Eugeniu; Nicolescu, Virginia; Vladoiu, Rodica

2017-02-01

Copper/Cobalt/Copper/Iron thin films were synthesized in order to obtain nanostructured materials with special magnetoresistive properties. The multilayer films were deposited on silicon substrates. In this respect we used Thermionic Vacuum Arc Discharge Method (TVA). The benefit of this deposition technique is the ability to have a controlled range of thicknesses starting from few nanometers to hundreds of nanometers. The purity of the thin films was insured by a high vacuum pressure and a lack of any kind of buffer gas inside the coating chamber. The morphology and structure of the thin films were analyzed using Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) Techniques and Energy Dispersive X-ray Spectroscopy (EDXS). Magnetoresistive measurement results depict that thin films possess Giant Magneto-Resistance Effect (GMR). Magneto-Optic-Kerr Effect (MOKE) studies were performed to characterize the magnetic properties of these thin films.

Origin of nonsaturating linear magnetoresistivity

NASA Astrophysics Data System (ADS)

Kisslinger, Ferdinand; Ott, Christian; Weber, Heiko B.

2017-01-01

The observation of nonsaturating classical linear magnetoresistivity has been an enigmatic phenomenon in solid-state physics. We present a study of a two-dimensional ohmic conductor, including local Hall effect and a self-consistent consideration of the environment. An equivalent-circuit scheme delivers a simple and convincing argument why the magnetoresistivity is linear in strong magnetic field, provided that current and biasing electric field are misaligned by a nonlocal mechanism. A finite-element model of a two-dimensional conductor is suited to display the situations that create such deviating currents. Besides edge effects next to electrodes, charge carrier density fluctuations are efficiently generating this effect. However, mobility fluctuations that have frequently been related to linear magnetoresistivity are barely relevant. Despite its rare observation, linear magnetoresitivity is rather the rule than the exception in a regime of low charge carrier densities, misaligned current pathways and strong magnetic field.

Low-field magnetoresistance up to 400 K in double perovskite Sr{sub 2}FeMoO{sub 6} synthesized by a citrate route

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harnagea, L., E-mail: harnagealuminita@gmail.com; Jurca, B.; Physical Chemistry Department, University of Bucharest, 4-12 Bd. Elisabeta, 030018 Bucharest

2014-03-15

A wet-chemistry technique, namely the citrate route, has been used to prepare high-quality polycrystalline samples of double perovskite Sr{sub 2}FeMoO{sub 6}. We report on the evolution of magnetic and magnetoresistive properties of the synthesized samples as a function of three parameters (i) the pH of the starting solution, (ii) the decomposition temperature of the citrate precursors and (iii) the sintering conditions. The low-field magnetoresistance (LFMR) value of our best samples is as high as 5% at room temperature for an applied magnetic field of 1 kOe. Additionally, the distinguishing feature of these samples is the persistence of LFMR, with amore » reasonably large value, up to 400 K which is a crucial parameter for any practical application. Our study indicates that the enhancement of LFMR observed is due to a good compromise between the grain size distribution and their magnetic polarization. -- Graphical abstract: The microstructure (left panel) and corresponding low-field magnetoresistance of one of the Sr{sub 2}FeMoO{sub 6} samples synthesized in the course of this work. Highlights: • Samples of Sr{sub 2}FeMoO{sub 6} are prepared using a citrate route under varying conditions. • Magnetoresistive properties are improved and optimized. • Low-field magnetoresitence values as large as 5% at 300 K/1 kOe are reported. • Persistence of low-field magnetoresistance up to 400 K.« less

Magnetic and transport properties of sputtered Gd-Y multilayers

NASA Astrophysics Data System (ADS)

Freitas, P. P.; From, M.; Melo, L. V.; Plaskett, T. S.

1991-04-01

Gd-Y-Gd multilayers were prepared that show a magnetoresistance enhancement for an Y layer separation of 30 Å. This magnetoresistance enhancement is an interface effect and occurs in samples where some degree of antiferromagnetic coupling is present.

Effect of annealing on the temperature dependence of inelastic tunneling contributions vis-à-vis tunneling magnetoresistance and barrier parameters in CoFe/MgO/NiFe magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhusan Singh, Braj; Chaudhary, Sujeet, E-mail: sujeetc@physics.iitd.ac.in

The effect of annealing on the changes in the inelastic tunneling contributions in tunneling conductance of ion beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions (MTJs) is investigated. The inelastic contributions are evaluated using hopping conduction model of Glazman and Matveev in the temperature range of 25–300 K. The hopping through number of series of localized states present in the barrier due to structural defects increases from 9 (in as deposited MTJ) to 18 after annealing (at 200 °C/1 h); although no changes in the interface roughness of CoFe-MgO and MgO-NiFe interfaces are observed as revealed by the x-ray reflectance studies on planar MTJs. Themore » bias dependence of tunneling magnetoresistance (TMR) at 25 K is found to get improved after annealing as revealed by the value V{sub 1/2} (the bias value at which the TMR reaches to half of its value at nearly zero bias); which is 78 mV (in MTJ annealed at 200 °C/1 h) 2.5 times the value of 33 mV (in as deposited MTJ). At 25 K the inelastic tunneling spectra revealed the presence of zero bias anomaly and magnon excitations in the range of 10–15 mV. While the barrier height exhibited a strong temperature dependence with nearly 100% increase from the value at 300 K to 25 K, the temperature dependence of TMR becomes steep after annealing.« less

Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

PubMed Central

Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

2015-01-01

Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics. PMID:26672482

A contactless positioning system for monitoring discontinuities in three dimensions with geological and geotechnical applications

NASA Astrophysics Data System (ADS)

Rinaldi-Montes, Natalia; Rowberry, Matt; Frontera, Carlos; BaroÅ, Ivo; Garcés, Javier; Blahůt, Jan; Pérez-López, Raúl; Pennos, Christos; Martí, Xavi

2017-07-01

In this paper, a contactless positioning system is presented which has been designed to monitor the kinematic behavior of mechanical discontinuities in three dimensions. The positioning system comprises a neodymium magnet, fixed on one side of a discontinuity, and a magnetoresistive sensing array, fixed on the opposing side. Each of the anisotropic magnetoresistive sensors in the sensing array records the magnetic field along three orthogonal directions. The positioning system intrinsically generates compact data packages which are transmitted effectively using a range of standard wireless telecommunication technologies. These data are then modeled using a global least squares fitting procedure in which the adjustable parameters are represented by the position and orientation of the neodymium magnet. The instrumental resolution of the positioning system can be tuned depending on the strength of the magnetic field generated by the neodymium magnet and the distance between the neodymium magnet and the magnetoresistive sensing array. For a typical installation, the displacement resolution is shown to be circa 10 μm while the rotation resolution is circa 0.1°. The first permanently deployed positioning system was established in June 2016 to monitor the behavior of an N-S trending fault located at the contact between the eastern Alps and the Vienna Basin. The robust design of the positioning system is demonstrated by the fact that no interruptions in the broadcasted data streams have occurred since its installation. It has a range of potential applications in many areas of basic and applied research including geology, geotechnical engineering, and structural health monitoring.

Coherent π-electron dynamics of (P)-2,2'-biphenol induced by ultrashort linearly polarized UV pulses: Angular momentum and ring current

NASA Astrophysics Data System (ADS)

Mineo, H.; Lin, S. H.; Fujimura, Y.

2013-02-01

The results of a theoretical investigation of coherent π-electron dynamics for nonplanar (P)-2,2'-biphenol induced by ultrashort linearly polarized UV pulses are presented. Expressions for the time-dependent coherent angular momentum and ring current are derived by using the density matrix method. The time dependence of these coherences is determined by the off-diagonal density matrix element, which can be obtained by solving the coupled equations of motion of the electronic-state density matrix. Dephasing effects on coherent angular momentum and ring current are taken into account within the Markov approximation. The magnitudes of the electronic angular momentum and current are expressed as the sum of expectation values of the corresponding operators in the two phenol rings (L and R rings). Here, L (R) denotes the phenol ring in the left (right)-hand side of (P)-2,2'-biphenol. We define the bond current between the nearest neighbor carbon atoms Ci and Cj as an electric current through a half plane perpendicular to the Ci-Cj bond. The bond current can be expressed in terms of the inter-atomic bond current. The inter-atomic bond current (bond current) depends on the position of the half plane on the bond and has the maximum value at the center. The coherent ring current in each ring is defined by averaging over the bond currents. Since (P)-2,2'-biphenol is nonplanar, the resultant angular momentum is not one-dimensional. Simulations of the time-dependent coherent angular momentum and ring current of (P)-2,2'-biphenol excited by ultrashort linearly polarized UV pulses are carried out using the molecular parameters obtained by the time-dependent density functional theory (TD-DFT) method. Oscillatory behaviors in the time-dependent angular momentum (ring current), which can be called angular momentum (ring current) quantum beats, are classified by the symmetry of the coherent state, symmetric or antisymmetric. The bond current of the bridge bond linking the L and R rings is zero for the symmetric coherent state, while it is nonzero for the antisymmetric coherent state. The magnitudes of ring current and ring current-induced magnetic field are also evaluated, and their possibility as a control parameter in ultrafast switching devices is discussed. The present results give a detailed description of the theoretical treatment reported in our previous paper [H. Mineo, M. Yamaki, Y. Teranish, M. Hayashi, S. H. Lin, and Y. Fujimura, J. Am. Chem. Soc. 134, 14279 (2012), 10.1021/ja3047848].

Coherent π-electron dynamics of (P)-2,2'-biphenol induced by ultrashort linearly polarized UV pulses: angular momentum and ring current.

PubMed

Mineo, H; Lin, S H; Fujimura, Y

2013-02-21

The results of a theoretical investigation of coherent π-electron dynamics for nonplanar (P)-2,2'-biphenol induced by ultrashort linearly polarized UV pulses are presented. Expressions for the time-dependent coherent angular momentum and ring current are derived by using the density matrix method. The time dependence of these coherences is determined by the off-diagonal density matrix element, which can be obtained by solving the coupled equations of motion of the electronic-state density matrix. Dephasing effects on coherent angular momentum and ring current are taken into account within the Markov approximation. The magnitudes of the electronic angular momentum and current are expressed as the sum of expectation values of the corresponding operators in the two phenol rings (L and R rings). Here, L (R) denotes the phenol ring in the left (right)-hand side of (P)-2,2'-biphenol. We define the bond current between the nearest neighbor carbon atoms Ci and Cj as an electric current through a half plane perpendicular to the Ci-Cj bond. The bond current can be expressed in terms of the inter-atomic bond current. The inter-atomic bond current (bond current) depends on the position of the half plane on the bond and has the maximum value at the center. The coherent ring current in each ring is defined by averaging over the bond currents. Since (P)-2,2'-biphenol is nonplanar, the resultant angular momentum is not one-dimensional. Simulations of the time-dependent coherent angular momentum and ring current of (P)-2,2'-biphenol excited by ultrashort linearly polarized UV pulses are carried out using the molecular parameters obtained by the time-dependent density functional theory (TD-DFT) method. Oscillatory behaviors in the time-dependent angular momentum (ring current), which can be called angular momentum (ring current) quantum beats, are classified by the symmetry of the coherent state, symmetric or antisymmetric. The bond current of the bridge bond linking the L and R rings is zero for the symmetric coherent state, while it is nonzero for the antisymmetric coherent state. The magnitudes of ring current and ring current-induced magnetic field are also evaluated, and their possibility as a control parameter in ultrafast switching devices is discussed. The present results give a detailed description of the theoretical treatment reported in our previous paper [H. Mineo, M. Yamaki, Y. Teranish, M. Hayashi, S. H. Lin, and Y. Fujimura, J. Am. Chem. Soc. 134, 14279 (2012)].

Viscomagnetic effect: j-magnitude weighting for Ar-N2

NASA Astrophysics Data System (ADS)

Snider, R. F.

1984-10-01

A continuing question in the study of the viscomagnetic effect has been the dependence on j magnitude, of the angular momentum polarization. It has been generally accepted that neither the normalized nor the unrenormalized angular momentum quadrupole correctly interprets the experimental results. IOS calculations of the production and relaxation cross sections are performed keeping the full j-magnitude dependence. Predictions of the field dependence of the viscomagnetic effect are made and it is found that the j dependence of both the production cross sections and of the relaxation matrix influence the detailed field dependence of the viscomagnetic effect.

A nanomagnetic study of phase transition in manganite thin films and ballistic magnetoresistance in magnetic nanocontacts

NASA Astrophysics Data System (ADS)

Chung, Seok-Hwan

This work focuses on two largely unexplored phenomena in micromagnetics: the temperature-driven paramagnetic insulator to ferromagnetic (FM) metallic phase transition in perovskite manganite and ballistic magnetoresistance in spin-polarized nanocontacts. To investigate the phase transition, an off-the-shelf commercial scanning force microscope was redesigned for operation at temperatures from 350 K to 100 K. This adaptation is elaborated in this thesis. Using this system, both ferromagnetic and charge-ordered domain structures of (La 1-xPrx)0.67Ca0.33MnO3 thin film were observed by magnetic force microscopy (MFM) and electric force microscopy (EFM) operated in the vicinity of the peak resistance temperature (Tp). Predominantly in-plane oriented FM domains of sub-micrometer size emerge below Tp and their local magnetic moment increased as the temperature is reduced. Charge-ordered insulating regions show a strong electrostatic interaction with an EFM tip at a few degrees above Tp and the interaction correlates well with the temperature dependence of resistivity of the film. Cross-correlation analysis between topography and magnetic structure on several substrates indicates FM domains form on the flat regions of the surface, while charge ordering occurs at surface protrusions. In the investigation of ballistic magnetoresistance, new results on half-metallic ferromagnets formed by atomic or nanometer contacts of CrO2-CrO 2 and CrO2-Ni are presented showing magnetoconductance as high as 400%. Analysis of the magnetoconductance versus conductance data for all materials known to exhibit so-called ballistic magnetoresistance strongly suggests that magnetoconductance of nanocontacts follows a universal mechanism. If the maximum magnetoconductance is normalized to unity and the conductance is scaled with the resistivity of the material, then all data points fall onto a universal curve independent of the contact material and the transport mechanism. The analysis has been applied to all available magnetoconductance data of magnetic nanocontacts in the literature. The results are in agreement with a theory that takes into account only the spin-scattering within a magnetic domain wall and are independent of whether the transport is ballistic or diffusive.

Characterization and Application of a Grazing Angle Objective for Quantitative Infrared Reflection Microspectroscopy

NASA Technical Reports Server (NTRS)

Pepper, Stephen V.

1995-01-01

A grazing angle objective on an infrared microspectrometer is studied for quantitative spectroscopy by considering the angular dependence of the incident intensity within the objective's angular aperture. The assumption that there is no angular dependence is tested by comparing the experimental reflectance of Si and KBr surfaces with the reflectance calculated by integrating the Fresnel reflection coefficient over the angular aperture under this assumption. Good agreement was found, indicating that the specular reflectance of surfaces can straight-forwardly be quantitatively integrated over the angular aperture without considering non-uniform incident intensity. This quantitative approach is applied to the thickness determination of dipcoated Krytox on gold. The infrared optical constants of both materials are known, allowing the integration to be carried out. The thickness obtained is in fair agreement with the value determined by ellipsometry in the visible. Therefore, this paper illustrates a method for more quantitative use of a grazing angle objective for infrared reflectance microspectroscopy.

Unusual negative magnetoresistance in Bi2Se3-ySy topological insulator under perpendicular magnetic field

NASA Astrophysics Data System (ADS)

Singh, Rahul; Gangwar, Vinod K.; Daga, D. D.; Singh, Abhishek; Ghosh, A. K.; Kumar, Manoranjan; Lakhani, A.; Singh, Rajeev; Chatterjee, Sandip

2018-03-01

The magneto-transport properties of Bi2Se3-ySy were investigated. Magnetoresistance (MR) decreases with an increase in the S content, and finally, for 7% (i.e., y = 0.21) S doping, the magnetoresistance becomes negative. This negative MR is unusual as it is observed when a magnetic field is applied in the perpendicular direction to the plane of the sample. The magneto-transport behavior shows the Shubnikov-de Haas (SdH) oscillation, indicating the coexistence of surface and bulk states. The negative MR has been attributed to the non-trivial bulk conduction.

High magnetic field studies of the charge density wave state of the quasi-two-dimensional conductor KMO 6O 17

NASA Astrophysics Data System (ADS)

Dumas, Jean; Guyot, Hervé; Balaska, Hafid; Marcus, Jacques; Vignolles, David; Sheikin, Ilya; Audouard, Alain; Brossard, Luc; Schlenker, Claire

2004-04-01

Magnetic torque and magnetoresistance measurements have been performed in high magnetic field on the quasi-two-dimensional charge density wave (CDW) oxide bronze KMo 6O 17 . Several anomalies have been found below 28 T either on the torque or on the magnetoresistance data. They can be attributed predominantly to orbital effects. Magnetoresistance data obtained up to 55 T show that a transition takes place above 30 T. This transition may be due to the Pauli coupling. The new field-induced density wave state exhibits Shubnikov-de Haas (SdH) oscillations.

Lab-on-Chip Cytometry Based on Magnetoresistive Sensors for Bacteria Detection in Milk

PubMed Central

Fernandes, Ana C.; Duarte, Carla M.; Cardoso, Filipe A.; Bexiga, Ricardo.; Cardoso, Susana.; Freitas, Paulo P.

2014-01-01

Flow cytometers have been optimized for use in portable platforms, where cell separation, identification and counting can be achieved in a compact and modular format. This feature can be combined with magnetic detection, where magnetoresistive sensors can be integrated within microfluidic channels to detect magnetically labelled cells. This work describes a platform for in-flow detection of magnetically labelled cells with a magneto-resistive based cell cytometer. In particular, we present an example for the validation of the platform as a magnetic counter that identifies and quantifies Streptococcus agalactiae in milk. PMID:25196163

Lab-on-chip cytometry based on magnetoresistive sensors for bacteria detection in milk.

PubMed

Fernandes, Ana C; Duarte, Carla M; Cardoso, Filipe A; Bexiga, Ricardo; Cardoso, Susana; Freitas, Paulo P

2014-08-21

Flow cytometers have been optimized for use in portable platforms, where cell separation, identification and counting can be achieved in a compact and modular format. This feature can be combined with magnetic detection, where magnetoresistive sensors can be integrated within microfluidic channels to detect magnetically labelled cells. This work describes a platform for in-flow detection of magnetically labelled cells with a magneto-resistive based cell cytometer. In particular, we present an example for the validation of the platform as a magnetic counter that identifies and quantifies Streptococcus agalactiae in milk.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lloyd-Hughes, James; Mosley, C. D. W.; Jones, S. P. P.

Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7Sr 0.3MnO 3. At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: themore » mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. As a result, the VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.« less

Measurement of angularly dependent spectra of betatron gamma-rays from a laser plasma accelerator with quadrant-sectored range filters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Jong Ho, E-mail: jhjeon07@ibs.re.kr; Nakajima, Kazuhisa, E-mail: naka115@dia-net.ne.jp; Rhee, Yong Joo

Measurement of angularly dependent spectra of betatron gamma-rays radiated by GeV electron beams from laser wakefield accelerators (LWFAs) are presented. The angle-resolved spectrum of betatron radiation was deconvolved from the position dependent data measured for a single laser shot with a broadband gamma-ray spectrometer comprising four-quadrant sectored range filters and an unfolding algorithm, based on the Monte Carlo code GEANT4. The unfolded gamma-ray spectra in the photon energy range of 0.1–10 MeV revealed an approximately isotropic angular dependence of the peak photon energy and photon energy-integrated fluence. As expected by the analysis of betatron radiation from LWFAs, the results indicate thatmore » unpolarized gamma-rays are emitted by electrons undergoing betatron motion in isotropically distributed orbit planes.« less

Determining the spin dependent mean free path in Co90Fe10 using giant magnetoresistance

NASA Astrophysics Data System (ADS)

Shakespear, K. F.; Perdue, K. L.; Moyerman, S. M.; Checkelsky, J. G.; Harberger, S. S.; Tamboli, A. C.; Carey, M. J.; Sparks, P. D.; Eckert, J. C.

2005-05-01

The spin dependent mean free path in Co90Fe10 is determined as a function of temperature down to 5K using two different spin valve structures. At 5K the spin dependent mean free path for one structure was measured to be 9.4±1.4nm, decreasing by a factor of 3 by 350K. For the other structure, it is 7.5±0.5nm at 5K and decreased by a factor of 1.5 by 350K. In both cases, the spin dependent mean free path approaches the typical thickness of ferromagnetic layers in spin valves at room temperature and, thus, has an impact on the choice of design parameters for the development of new spintronic devices.

Valley polarization in bismuth

NASA Astrophysics Data System (ADS)

Fauque, Benoit

2013-03-01

The electronic structure of certain crystal lattices can contain multiple degenerate valleys for their charge carriers to occupy. The principal challenge in the development of valleytronics is to lift the valley degeneracy of charge carriers in a controlled way. In bulk semi-metallic bismuth, the Fermi surface includes three cigar-shaped electron valleys lying almost perpendicular to the high symmetry axis known as the trigonal axis. The in-plane mass anisotropy of each valley exceeds 200 as a consequence of Dirac dispersion, which drastically reduces the effective mass along two out of the three orientations. According to our recent study of angle-dependent magnetoresistance in bismuth, a flow of Dirac electrons along the trigonal axis is extremely sensitive to the orientation of in-plane magnetic field. Thus, a rotatable magnetic field can be used as a valley valve to tune the contribution of each valley to the total conductivity. As a consequence of a unique combination of high mobility and extreme mass anisotropy in bismuth, the effect is visible even at room temperature in a magnetic field of 1 T. Thus, a modest magnetic field can be used as a valley valve in bismuth. The results of our recent investigation of angle-dependent magnetoresistance in other semi-metals and doped semiconductors suggest that a rotating magnetic field can behave as a valley valve in a multi-valley system with sizeable mass anisotropy.

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

NASA Astrophysics Data System (ADS)

Bhowmik, R. N.; Vijayasri, G.

2015-06-01

We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (˜500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

On the study of angular velocity in mass asymmetry nuclei

NASA Astrophysics Data System (ADS)

Kaur, Kamaldeep; Kumar, Suneel

2018-05-01

Using isospin-dependent quantum molecular dynamics (IQMD) model, the role of angular velocity (Wy) has been explored by changing the mass asymmetric content of the colliding nuclei at the incident energy of 50 MeV/nucleon for centrality 0.25