Investigation of Nitride Morphology After Self-Aligned Contact Etch

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

2001-01-01

Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

Development of microchannel plate x-ray optics

NASA Technical Reports Server (NTRS)

Kaaret, Philip; Chen, Andrew

1994-01-01

The goal of this research program was to develop a novel technique for focusing x-rays based on the optical system of a lobster's eye. A lobster eye employs many closely packed reflecting surfaces arranged within a spherical or cylindrical shell. These optics have two unique properties: they have unlimited fields of view and can be manufactured via replication of identical structures. Because the angular resolution is given by the ratio of the size of the individual optical elements to the focal length, optical elements with sizes on the order of one hundred microns are required to achieve good angular resolution with a compact telescope. We employed anisotropic etching of single crystal silicon wafers for the fabrication of micron-scale optical elements. This technique, commonly referred to as silicon micromachining, is based on silicon fabrication techniques developed by the microelectronics industry. An anisotropic etchant is a chemical which etches certain silicon crystal planes much more rapidly than others. Using wafers in which the slowly etched crystal planes are aligned perpendicularly to the wafer surface, it is possible to etch a pattern completely through a wafer with very little distortion. Our optics consist of rectangular pores etched completely through group of zone axes (110) oriented silicon wafers. The larger surfaces of the pores (the mirror elements) were aligned with the group of zone axes (111) planes of the crystal perpendicular to the wafer surface. We have succeeded in producing silicon lenses with a geometry suitable for 1-d focusing x-ray optics. These lenses have an aspect ratio (40:1) suitable for x-ray reflection and have very good optical surface alignment. We have developed a number of process refinements which improved the quality of the lens geometry and the repeatability of the etch process. A significant progress was made in obtaining good optical surface quality. The RMS roughness was decreased from 110 A for our initial lenses to 30 A in the final lenses. A further factor of three improvement in surface quality is required for the production of efficient x-ray optics. In addition to the silicon fabrication, an x-ray beam line was constructed at Columbia for testing the optics.

High-Frequency (>50 MHz) Medical Ultrasound Linear Arrays Fabricated From Micromachined Bulk PZT Materials

PubMed Central

Liu, Changgeng; Zhou, Qifa; Djuth, Frank T.; Shung, K. Kirk

2012-01-01

This paper describes the development and characterization of a high-frequency (65-MHz) ultrasound transducer linear array. The array was built from bulk PZT which was etched using an optimized chlorine-based plasma dry-etching process. The median etch rate of 8 μm/h yielded a good profile (wall) angle (>83°) and a reasonable processing time for etch depths up to 40 μm (which corresponds to a 50-MHz transducer). A backing layer with an acoustic impedance of 6 MRayl and a front-end polymer matching layer yielded a transducer bandwidth of 40%. The major parameters of the transducer have been characterized. The two-way insertion loss and crosstalk between adjacent channels at the center frequency are 26.5 and −25 dB, respectively. PMID:24626041

Photonic jet μ-etching: from static to dynamic process

NASA Astrophysics Data System (ADS)

Abdurrochman, A.; Lecler, S.; Zelgowski, J.; Mermet, F.; Fontaine, J.; Tumbelaka, B. Y.

2017-05-01

Photonic jet etching is a direct-laser etching method applying photonic jet phenomenon to concentrate the laser beam onto the proceeded material. We call photonic jet the phenomenon of the localized sub-wavelength propagative beam generated at the shadow-side surfaces of micro-scale dielectric cylinders or spheres, when they are illuminated by an electromagnetic plane-wave or laser beam. This concentration has made possible the laser to yield sub-μ etching marks, despite the laser was a near-infrared with nano-second pulses sources. We will present these achievements from the beginning when some spherical glasses were used for static etching to dynamic etching using an optical fiber with a semi-elliptical tip.

Micropore x-ray optics using anisotropic wet etching of (110) silicon wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto

2006-12-10

To develop x-ray mirrors for micropore optics, smooth silicon (111)sidewalls obtained after anisotropic wet etching of a silicon (110) wafer were studied. A sample device with 19 {mu}m wide (111) sidewalls was fabricated using a 220 {mu}m thick silicon (110) wafer and potassium hydroxide solution. For what we believe to be the first time,x-ray reflection on the (111) sidewalls was detected in the angular response measurement. Compared to ray-tracing simulations, the surface roughness of the sidewalls was estimated to be 3-5 nm, which is consistent with the atomic force microscope and the surface profiler measurements.

Micropore x-ray optics using anisotropic wet etching of (110) silicon wafers.

PubMed

Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Mitsuda, Kazuhisa; Hoshino, Akio; Ishisaki, Yoshitaka; Yang, Zhen; Takano, Takayuki; Maeda, Ryutaro

2006-12-10

To develop x-ray mirrors for micropore optics, smooth silicon (111) sidewalls obtained after anisotropic wet etching of a silicon (110) wafer were studied. A sample device with 19 microm wide (111) sidewalls was fabricated using a 220 microm thick silicon (110) wafer and potassium hydroxide solution. For what we believe to be the first time, x-ray reflection on the (111) sidewalls was detected in the angular response measurement. Compared to ray-tracing simulations, the surface roughness of the sidewalls was estimated to be 3-5 nm, which is consistent with the atomic force microscope and the surface profiler measurements.

Fibers comprised of epitaxially grown single-wall carbon nanotubes, and a method for added catalyst and continuous growth at the tip

DOEpatents

Kittrell, W. Carter; Wang, Yuhuang; Kim, Myung Jong; Hauge, Robert H.; Smalley, Richard E.; Marek leg, Irene Morin

2010-06-01

The present invention is directed to fibers of epitaxially grown single-wall carbon nanotubes (SWNTs) and methods of making same. Such methods generally comprise the steps of: (a) providing a spun SWNT fiber; (b) cutting the fiber substantially perpendicular to the fiber axis to yield a cut fiber; (c) etching the cut fiber at its end with a plasma to yield an etched cut fiber; (d) depositing metal catalyst on the etched cut fiber end to form a continuous SWNT fiber precursor; and (e) introducing feedstock gases under SWNT growth conditions to grow the continuous SWNT fiber precursor into a continuous SWNT fiber.

Evaluation of alignment error of micropore X-ray optics caused by hot plastic deformation

NASA Astrophysics Data System (ADS)

Numazawa, Masaki; Ishi, Daiki; Ezoe, Yuichiro; Takeuchi, Kazuma; Terada, Masaru; Fujitani, Maiko; Ishikawa, Kumi; Nakajima, Kazuo; Morishita, Kohei; Ohashi, Takaya; Mitsuda, Kazuhisa; Nakamura, Kasumi; Noda, Yusuke

2018-06-01

We report on the evaluation and characterization of micro-electromechanical system (MEMS) X-ray optics produced by silicon dry etching and hot plastic deformation. Sidewalls of micropores formed by etching through a silicon wafer are used as X-ray reflecting mirrors. The wafer is deformed into a spherical shape to focus parallel incidence X-rays. We quantitatively evaluated a mirror alignment error using an X-ray pencil beam (Al Kα line at 1.49 keV). The deviation angle caused only by the deformation was estimated from angular shifts of the X-ray focusing point before and after the deformation to be 2.7 ± 0.3 arcmin on average within the optics. This gives an angular resolution of 12.9 ± 1.4 arcmin in half-power diameter (HPD). The surface profile of the deformed optics measured using a NH-3Ns surface profiler (Mitaka Kohki) also indicated that the resolution was 11.4 ± 0.9 arcmin in HPD, suggesting that we can simply evaluate the alignment error caused by the hot plastic deformation.

Ion beam sputtering of fluoropolymers

NASA Technical Reports Server (NTRS)

Sovey, J. S.

1978-01-01

Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

More vertical etch profile using a Faraday cage in plasma etching

NASA Astrophysics Data System (ADS)

Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

1999-05-01

Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

High-NA optical CD metrology on small in-cell targets enabling improved higher order dose control and process control for logic

NASA Astrophysics Data System (ADS)

Cramer, Hugo; Mc Namara, Elliott; van Laarhoven, Rik; Jaganatharaja, Ram; de la Fuente, Isabel; Hsu, Sharon; Belletti, Filippo; Popadic, Milos; Tu, Ward; Huang, Wade

2017-03-01

The logic manufacturing process requires small in-device metrology targets to exploit the full dose correction potential of the modern scanners and process tools. A high-NA angular resolved scatterometer (YieldStar S-1250D) was modified to demonstrate the possibility of OCD measurements on 5x5µm2 targets. The results obtained on test wafers in a logic manufacturing environment, measured after litho and after core etch, showed a good correlation to larger reference targets and AEI to ADI intra-field CDU correlation, thereby demonstrating the feasibility of OCD on such small targets. The data was used to determine a reduction potential of 55% for the intra-field CD variation, using 145 points per field on a few inner fields, and 33% of the process induced across wafer CD variation using 16 points per field full wafer. In addition, the OCD measurements reveal valuable information on wafer-to-wafer layer height variations within a lot.

Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

2017-04-01

Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the features during the etch process. Herein we will also demonstrate a test case on how a combination or plasma assisted and plasma free etch techniques has the potential to improve process performance of a 193nm immersion based self aligned quandruple patterning (SAQP) for BEOL compliant films (an example shown in Fig 2). In addition, we will also present on the application of gas etches for (1) profile improvement, (2) selective mandrel pull (3) critical dimension trim of mandrels, with an analysis of advantages over conventional techniques in terms of LER and EPE.

Effects of surface polishing on the microstrain behavior of telescope mirror materials

NASA Technical Reports Server (NTRS)

Eul, W. A.; Woods, W. W.

1973-01-01

Rough ground silicic mirror substrate materials were found in previous investigations to exhibit significant surface yield. This effect was removed by surface etching, a procedure not normally employed in the finishing of optical telescope mirrors. The effects of fine grinding and polishing techniques as well as graded etching are investigated. Torsional shear measurements of yield strain versus stress are made on four candidate mirror substrate materials: polycrystalline silicon, ULE silica 7971, CER-VIT 101, and fused silica 7940. Commonly employed fine grinding and polishing practices are shown to remove a major portion of the surface yield found in rough ground mirror substrate materials.

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Hyungjoo; Zhu Weiye; Liu Lei

2013-05-15

Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaNmore » etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.« less

Bio-Inspired Micro-Fluidic Angular-Rate Sensor for Vestibular Prostheses

PubMed Central

Andreou, Charalambos M.; Pahitas, Yiannis; Georgiou, Julius

2014-01-01

This paper presents an alternative approach for angular-rate sensing based on the way that the natural vestibular semicircular canals operate, whereby the inertial mass of a fluid is used to deform a sensing structure upon rotation. The presented gyro has been fabricated in a commercially available MEMS process, which allows for microfluidic channels to be implemented in etched glass layers, which sandwich a bulk-micromachined silicon substrate, containing the sensing structures. Measured results obtained from a proof-of-concept device indicate an angular rate sensitivity of less than 1 °/s, which is similar to that of the natural vestibular system. By avoiding the use of a continually-excited vibrating mass, as is practiced in today's state-of-the-art gyroscopes, an ultra-low power consumption of 300 μW is obtained, thus making it suitable for implantation. PMID:25054631

Bio-inspired micro-fluidic angular-rate sensor for vestibular prostheses.

PubMed

Andreou, Charalambos M; Pahitas, Yiannis; Georgiou, Julius

2014-07-22

This paper presents an alternative approach for angular-rate sensing based on the way that the natural vestibular semicircular canals operate, whereby the inertial mass of a fluid is used to deform a sensing structure upon rotation. The presented gyro has been fabricated in a commercially available MEMS process, which allows for microfluidic channels to be implemented in etched glass layers, which sandwich a bulk-micromachined silicon substrate, containing the sensing structures. Measured results obtained from a proof-of-concept device indicate an angular rate sensitivity of less than 1 °/s, which is similar to that of the natural vestibular system. By avoiding the use of a continually-excited vibrating mass, as is practiced in today's state-of-the-art gyroscopes, an ultra-low power consumption of 300 μW is obtained, thus making it suitable for implantation.

Correlation study of actual temperature profile and in-line metrology measurements for within-wafer uniformity improvement and wafer edge yield enhancement (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fang, Fang; Vaid, Alok; Vinslava, Alina; Casselberry, Richard; Mishra, Shailendra; Dixit, Dhairya; Timoney, Padraig; Chu, Dinh; Porter, Candice; Song, Da; Ren, Zhou

2018-03-01

It is getting more important to monitor all aspects of influencing parameters in critical etch steps and utilize them as tuning knobs for within-wafer uniformity improvement and wafer edge yield enhancement. Meanwhile, we took a dive in pursuing "measuring what matters" and challenged ourselves for more aspects of signals acquired in actual process conditions. Among these factors which are considered subtle previously, we identified Temperature, especially electrostatic chuck (ESC) Temperature measurement in real etch process conditions have direct correlation to in-line measurements. In this work, we used SensArray technique (EtchTemp-SE wafer) to measure ESC temperature profile on a 300mm wafer with plasma turning on to reproduce actual temperature pattern on wafers in real production process conditions. In field applications, we observed substantial correlation between ESC temperature and in-line optical metrology measurements and since temperature is a process factor that can be tuning through set-temperature modulations, we have identified process knobs with known impact on physical profile variations. Furthermore, ESC temperature profile on a 300mm wafer is configured as multiple zones upon radius and SensArray measurements mechanism could catch such zonal distribution as well, which enables detailed temperature modulations targeting edge ring only where most of chips can be harvested and critical zone for yield enhancement. Last but not least, compared with control reference (ESC Temperature in static plasma-off status), we also get additional factors to investigate in chamber-to-chamber matching study and make process tool fleet match on the basis really matters in production. KLA-Tencor EtchTemp-SE wafer enables Plasma On wafer temperature monitoring of silicon etch process. This wafer is wireless and has 65 sensors with measurement range from 20 to 140°C. the wafer is designed to run in real production recipe plasma on condition with maximum RF power up to 7KW. The wafer surface is coated with Yttrium oxide film which allows Silicon Etch chemistry. At Fab-8, we carried investigations in 14 nm FEOL critical etch process which has direct impact on yield, using SensorArray EtchTemp-SE wafer, we measured ESC temperature profile across multiple chambers, for both plasma on and plasma off, promising results achieved on chamber temperature signature identification, guideline for chamber to chamber matching improvement. Correlation between wafer mean temperature and determining criticality-process parameters of recess depth and CD is observed. Furthermore, detail zonal temperature/profile correlation is investigated to identify individual correlation in each chuck zone, and provided unique process knobs corresponding to each chunk. Meanwhile, passive ESC Chuck DOE was done to modulate wafer temperature at different zones, and Sensor Array wafer measurements verified temperature responding well with the ESC set point. Correlation R2 = 0.9979 for outer ring and R2 = 0.9981 for Mid Outer ring is observed, as shown in . Experiments planning to modulate edge zone ESC temperature to tune profile within-wafer uniformity and prove gain in edge yield enhancement and to improve edge yield is underway.

Ultradeep electron cyclotron resonance plasma etching of GaN

DOE PAGES

Harrison, Sara E.; Voss, Lars F.; Torres, Andrea M.; ...

2017-07-25

Here, ultradeep (≥5 μm) electron cyclotron resonance plasma etching of GaN micropillars was investigated. Parametric studies on the influence of the applied radio-frequency power, chlorine content in a Cl 2/Ar etch plasma, and operating pressure on the etch depth, GaN-to-SiO 2 selectivity, and surface morphology were performed. Etch depths of >10 μm were achieved over a wide range of parameters. Etch rates and sidewall roughness were found to be most sensitive to variations in RF power and % Cl 2 in the etch plasma. Selectivities of >20:1 GaN:SiO 2 were achieved under several chemically driven etch conditions where a maximummore » selectivity of ~39:1 was obtained using a 100% Cl 2 plasma. The etch profile and (0001) surface morphology were significantly influenced by operating pressure and the chlorine content in the plasma. Optimized etch conditions yielded >10 μm tall micropillars with nanometer-scale sidewall roughness, high GaN:SiO 2 selectivity, and nearly vertical etch profiles. These results provide a promising route for the fabrication of ultradeep GaN microstructures for use in electronic and optoelectronic device applications. In addition, dry etch induced preferential crystallographic etching in GaN microstructures is also demonstrated, which may be of great interest for applications requiring access to non- or semipolar GaN surfaces.« less

Durability Enhancement of a Microelectromechanical System-Based Liquid Droplet Lens

NASA Astrophysics Data System (ADS)

Kyoo Lee, June; Park, Kyung-Woo; Kim, Hak-Rin; Kong, Seong Ho

2010-06-01

In this paper, we propose methods to enhance the durability of a microelectromechanical system (MEMS)-based liquid droplet lens driven by electrowetting. The enhanced durability of the lens is achieved through not only improvement in quality of dielectric layer for electrowetting by minimizing concentration of coarse pinholes, but also mitigation of physical and electrostatic stresses by reforming lens cavity. Silicon dioxide layer is deposited using plasma enhanced chemical vapor deposition, splitting the process into several steps to minimize the pinhole concentration in the oxide layer. And the stresses-reduced cavity in a form of overturned tetra-angular truncated pyramid with rounded corners, which is based on simulated results, is proposed and realized using silicon wet etching processes combined into anisotropic and isotropic etching.

Barium-strontium-titanate etching characteristics in chlorinated discharges

NASA Astrophysics Data System (ADS)

Stafford, Luc; Margot, Joëlle; Langlois, Olivier; Chaker, Mohamed

2003-07-01

The etching characteristics of barium-strontium-titanate (BST) were investigated using a high-density plasma sustained by surface waves at 190 MHz in Ar/Cl2 gas mixtures. The etch rate was examined as a function of both the total gas pressure and the Cl2 fraction in Ar/Cl2 using a wafer temperature of 10 °C. The results were correlated to positive ion density and plasma composition obtained from Langmuir probes and mass spectrometry. The BST etch rate was found to increase linearly with the positive ion density and to decrease with increasing chlorine atom concentration. This result indicates that for the temperature conditions used, the interaction between chlorine and BST yields compounds having a volatility that is lower than the original material. As a consequence, the contribution of neutral atomic Cl atoms to the etch mechanism is detrimental, thereby reducing the etch rate. As the wafer temperature increases, the role of chemistry in the etching process is enhanced.

Silicon macroporous arrays with high aspect ratio prepared by ICP etching

NASA Astrophysics Data System (ADS)

Wang, Guozheng; Yang, Bingchen; Wang, Ji; Yang, Jikai; Duanmu, Qingduo

2018-02-01

This paper reports on a macroporous silicon arrays with high aspect ratio, the pores of which are of 162, 205, 252, 276μm depths with 6, 10, 15 and 20 μm diameters respectively, prepared by Multiplex Inductively Coupled Plasma (ICP) etching. It was shown that there are very differences in process of high aspect ratio microstructures between the deep pores, a closed structure, and deep trenches, a open structure. The morphology and the aspect ratio dependent etching were analyzed and discussed. The macroporous silicon etched by ICP process yield an uneven, re-entrant, notched and ripples surface within the pores. The main factors effecting on the RIE lag of HARP etching are the passivation cycle time, the pressure of reactive chamber, and the platen power of ICP system.

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

NASA Astrophysics Data System (ADS)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

2017-02-01

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.

Development of a high-yield via-last through silicon via process using notchless silicon etching and wet cleaning of the first metal layer

NASA Astrophysics Data System (ADS)

Watanabe, Naoya; Kikuchi, Hidekazu; Yanagisawa, Azusa; Shimamoto, Haruo; Kikuchi, Katsuya; Aoyagi, Masahiro; Nakamura, Akio

2017-07-01

A high-yield via-last through silicon via (TSV) process has been developed using notchless Si etching and wet cleaning of the first metal layer. In this process, the notching was suppressed by optimizing the deep Si etching conditions and wet cleaning was performed using an organic alkaline solution to remove reaction products generated by the etchback step on the first metal layer. By this process, a number of small TSVs (TSV diameter: 6 µm TSV depth: 22 µm number of TSVs: 20,000/chip) could be formed uniformly on an 8-in. wafer. The electrical characteristics of small TSVs formed by this via-last TSV process were investigated. The TSV resistance determined by four-terminal measurements was approximately 24 mΩ. The leakage current between the TSV and the Si substrate was 2.5 pA at 5 V. The TSV capacitance determined using an inductance-capacitance-resistance (LCR) meter was 54 fF, while the TSV yield determined from TSV chain measurements was high (83%) over an 8-in. wafer.

X-Ray Diffractive Optics

NASA Technical Reports Server (NTRS)

Dennis, Brian; Li, Mary; Skinner, Gerald

2013-01-01

X-ray optics were fabricated with the capability of imaging solar x-ray sources with better than 0.1 arcsecond angular resolution, over an order of magnitude finer than is currently possible. Such images would provide a new window into the little-understood energy release and particle acceleration regions in solar flares. They constitute one of the most promising ways to probe these regions in the solar atmosphere with the sensitivity and angular resolution needed to better understand the physical processes involved. A circular slit structure with widths as fine as 0.85 micron etched in a silicon wafer 8 microns thick forms a phase zone plate version of a Fresnel lens capable of focusing approx. =.6 keV x-rays. The focal length of the 3-cm diameter lenses is 100 microns, and the angular resolution capability is better than 0.1 arcsecond. Such phase zone plates were fabricated in Goddard fs Detector Development Lab. (DDL) and tested at the Goddard 600-microns x-ray test facility. The test data verified that the desired angular resolution and throughput efficiency were achieved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Enhanced in vitro biocompatibility of ultrafine-grained biomedical NiTi alloy with microporous surface

NASA Astrophysics Data System (ADS)

Zheng, C. Y.; Nie, F. L.; Zheng, Y. F.; Cheng, Y.; Wei, S. C.; Valiev, R. Z.

2011-08-01

Bulk ultrafine-grained Ni 50.8Ti 49.2 alloy (UFG-NiTi) was successfully fabricated by equal-channel angular pressing (ECAP) technique in the present study, and to further improve its surface biocompatibility, surface modification techniques including sandblasting, acid etching and alkali treatment were employed to produce either irregularly roughened surface or microporous surface or hierarchical porous surface with bioactivity. The effect of the above surface treatments on the surface roughness, wettability, corrosion behavior, ion release, apatite forming ability and cytocompatibility of UFG-NiTi alloy were systematically investigated with the coarse-grained NiTi alloy as control. The pitting corrosion potential ( Epit) was increased from 393 mV (SCE) to 704 mV (SCE) with sandblasting and further increased to 1539 mV (SCE) with following acid etching in HF/HNO 3 solution. All the above surface treatment increased the apatite forming ability of UFG-NiTi in varying degrees when soaked them in simulated body fluid (SBF). Meanwhile, both sandblasting and acid etching could promote the cytocompatibility for osteoblasts: sandblasting enhanced cell attachment and acid etching increased cell proliferation. The different corrosion behavior, apatite forming ability and cellular response of UFG-NiTi after different surface modifications are attributed to the topography and wettability of the resulting surface oxide layer.

The effect of reactive ion etch (RIE) process conditions on ReRAM device performance

NASA Astrophysics Data System (ADS)

Beckmann, K.; Holt, J.; Olin-Ammentorp, W.; Alamgir, Z.; Van Nostrand, J.; Cady, N. C.

2017-09-01

The recent surge of research on resistive random access memory (ReRAM) devices has resulted in a wealth of different materials and fabrication approaches. In this work, we describe the performance implications of utilizing a reactive ion etch (RIE) based process to fabricate HfO2 based ReRAM devices, versus a more unconventional shadow mask fabrication approach. The work is the result of an effort to increase device yield and reduce individual device size. Our results show that choice of RIE etch gas (SF6 versus CF4) is critical for defining the post-etch device profile (cross-section), and for tuning the removal of metal layers used as bottom electrodes in the ReRAM device stack. We have shown that etch conditions leading to a tapered profile for the device stack cause poor electrical performance, likely due to metal re-deposition during etching, and damage to the switching layer. These devices exhibit nonlinear I-V during the low resistive state, but this could be improved to linear behavior once a near-vertical etch profile was achieved. Device stacks with vertical etch profiles also showed an increase in forming voltage, reduced switching variability and increased endurance.

Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C 4F 8 and Ar/CHF 3 Plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2016-09-08

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Optimization of surface morphology and scattering properties of TCO/AIT textured glass front electrode for thin film solar cells

NASA Astrophysics Data System (ADS)

Addonizio, M. L.; Fusco, L.; Antonaia, A.; Cominale, F.; Usatii, I.

2015-12-01

Aluminium induced texture (AIT) method has been used for obtaining highly textured glass substrate suitable for silicon based thin film solar cell technology. Wet etch step parameters of AIT process have been varied and effect of different etchants and different etching times on morphological and optical properties has been analyzed. The resulting morphology features (shape, size distribution, inclination angle) have been optimized in order to obtain the best scattering properties. ZnO:Ga (GZO) films have been deposited by sputtering technique on AIT-processed glass. Two different ZnO surface morphologies have been obtained, strongly depending on the underlying glass substrate morphology induced by different etching times. Very rough and porous texture (σrms ∼ 150 nm) was obtained on glass etched 2 min showing cauliflower-like structure, whereas a softer texture (σrms ∼ 78 nm) was obtained on glass etched 7 min giving wider and smoother U-shaped craters. The effect of different glass textures on optical confinement has been tested in amorphous silicon based p-i-n devices. Devices fabricated on GZO/high textured glass showed a quantum efficiency enhancement due to both an effective light trapping phenomenon and an effective anti-reflective optical behaviour. Short etching time produce smaller cavities (<1 μm) with deep U-shape characterized by high roughness, high inclination angle and low autocorrelation length. This surface morphology promoted a large light scattering phenomenon, as evidenced by haze value and by angular resolved scattering (ARS) behaviour, into a large range of diffraction angles, giving high probability of effective light trapping inside a PV device.

Wet-chemical dissolution of TRISO-coated simulated high-temperature-reactor fuel particles

NASA Astrophysics Data System (ADS)

Skolo, K. P.; Jacobs, P.; Venter, J. H.; Klopper, W.; Crouse, P. L.

2012-01-01

Chemical etching with different mixtures of acidic solutions has been investigated to disintegrate the two outermost coatings from tri-structural isotropic coated particles containing zirconia kernels, which are used in simulated particles instead of uranium dioxide. A scanning electron microscope (SEM) was used to study the morphology of the particles after the first etching step as well as at different stages of the second etching step. SEM examination shows that the outer carbon layer can be readily removed with a CrO 3-HNO 3/H 2SO 4 solution. This finding was verified by energy dispersive spectroscopy (EDS) analysis. Etching of the silicon carbide layer in a hydrofluoric-nitric solution yielded partial removal of the coating and localized attack of the underlying coating layers. The SEM results provide evidence that the etching of the silicon carbide layer is strongly influenced by its microstructure.

Trench formation in <110> silicon for millimeter-wave switching device

NASA Astrophysics Data System (ADS)

Datta, P.; Kumar, Praveen; Nag, Manoj; Bhattacharya, D. K.; Khosla, Y. P.; Dahiya, K. K.; Singh, D. V.; Venkateswaran, R.; Kumar, Devender; Kesavan, R.

1999-11-01

Anisotropic etching using alkaline solution has been adopted to form trenches in silicon while fabricating surface oriented bulk window SPST switches. An array pattern has been etched on silicon with good control on depth of trenches. KOH-water solution is seen to yield a poor surface finish. Use of too much of additive like isopropyl alcohol improves the surface condition but distorts the array pattern due to loss of anisotropy. However, controlled use of this additive during the last phase of trench etching is found to produce trenched arrays with desired depth, improved surface finish and minimum distortion of lateral dimensions.

Collaborative Platform for DFM

DTIC Science & Technology

2007-12-20

generation litho hotspot checkers have also been implemented in automated hotspot fixers that can automatically fix designs by making small changes...processing side (ex. new CMP models, etch models, litho models) and on the circuit side (ex. Process aware circuit analysis or yield optimization...Since final gate CD is a function of not only litho , but Post Exposure Bake, ashing, and etch, the processing module can be augmented with more

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Beheim, Glenn M.

2005-01-01

Silicon carbide (SiC) is a promising material for harsh environment sensors and electronics because it can enable such devices to withstand high temperatures and corrosive environments. Microfabrication techniques have been studied extensively in an effort to obtain the same flexibility of machining SiC that is possible for the fabrication of silicon devices. Bulk micromachining using deep reactive ion etching (DRIE) is attractive because it allows the fabrication of microstructures with high aspect ratios (etch depth divided by lateral feature size) in single-crystal or polycrystalline wafers. Previously, the Sensors and Electronics Branch of the NASA Glenn Research Center developed a DRIE process for SiC using the etchant gases sulfur hexafluoride (SF6) and argon (Ar). This process provides an adequate etch rate of 0.2 m/min and yields a smooth surface at the etch bottom. However, the etch sidewalls are rougher than desired, as shown in the preceding photomicrograph. Furthermore, the resulting structures have sides that slope inwards, rather than being precisely vertical. A new DRIE process for SiC was developed at Glenn that produces smooth, vertical sidewalls, while maintaining an adequately high etch rate.

Laser-assisted focused He + ion beam induced etching with and without XeF 2 gas assist

DOE PAGES

Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; ...

2016-10-04

Focused helium ion (He +) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF 2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, amore » pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He + induced nanopatterning techniques improve material removal rate, in comparison to standard He + sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He + probe as a nanopattering tool.« less

Laser-assisted focused He + ion beam induced etching with and without XeF 2 gas assist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.

Focused helium ion (He +) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF 2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, amore » pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He + induced nanopatterning techniques improve material removal rate, in comparison to standard He + sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He + probe as a nanopattering tool.« less

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2000-01-01

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

Performance improvements of binary diffractive structures via optimization of the photolithography and dry etch processes

NASA Astrophysics Data System (ADS)

Welch, Kevin; Leonard, Jerry; Jones, Richard D.

2010-08-01

Increasingly stringent requirements on the performance of diffractive optical elements (DOEs) used in wafer scanner illumination systems are driving continuous improvements in their associated manufacturing processes. Specifically, these processes are designed to improve the output pattern uniformity of off-axis illumination systems to minimize degradation in the ultimate imaging performance of a lithographic tool. In this paper, we discuss performance improvements in both photolithographic patterning and RIE etching of fused silica diffractive optical structures. In summary, optimized photolithographic processes were developed to increase critical dimension uniformity and featuresize linearity across the substrate. The photoresist film thickness was also optimized for integration with an improved etch process. This etch process was itself optimized for pattern transfer fidelity, sidewall profile (wall angle, trench bottom flatness), and across-wafer etch depth uniformity. Improvements observed with these processes on idealized test structures (for ease of analysis) led to their implementation in product flows, with comparable increases in performance and yield on customer designs.

Improvement of enamel bond strengths for conventional and resin-modified glass ionomers: acid-etching vs. conditioning*

PubMed Central

Zhang, Ling; Tang, Tian; Zhang, Zhen-liang; Liang, Bing; Wang, Xiao-miao; Fu, Bai-ping

2013-01-01

Objective: This study deals with the effect of phosphoric acid etching and conditioning on enamel micro-tensile bond strengths (μTBSs) of conventional and resin-modified glass ionomer cements (GICs/RMGICs). Methods: Forty-eight bovine incisors were prepared into rectangular blocks. Highly-polished labial enamel surfaces were either acid-etched, conditioned with liquids of cements, or not further treated (control). Subsequently, two matching pre-treated enamel surfaces were cemented together with one of four cements [two GICs: Fuji I (GC), Ketac Cem Easymix (3M ESPE); two RMGICs: Fuji Plus (GC), RelyX Luting (3M ESPE)] in preparation for μTBS tests. Pre-treated enamel surfaces and cement-enamel interfaces were analyzed by scanning electron microscopy (SEM). Results: Phosphoric acid etching significantly increased the enamel μTBS of GICs/RMGICs. Conditioning with the liquids of the cements produced significantly weaker or equivalent enamel μTBS compared to the control. Regardless of etching, RMGICs yielded stronger enamel μTBS than GICs. A visible hybrid layer was found at certain enamel-cement interfaces of the etched enamels. Conclusions: Phosphoric acid etching significantly increased the enamel μTBSs of GICs/RMGICs. Phosphoric acid etching should be recommended to etch the enamel margins before the cementation of the prostheses such as inlays and onlays, using GICs/RMGICs to improve the bond strengths. RMGICs provided stronger enamel bond strength than GICs and conditioning did not increase enamel bond strength. PMID:24190447

Overcoming Etch Challenges on a 6″ Hg1- x Cd x Te MBE on Si Wafer

NASA Astrophysics Data System (ADS)

Apte, Palash; Norton, Elyse; Robinson, Solomon

2017-10-01

The effect of increasing photoresist (PR) thickness on the inductively coupled plasma (ICP) dry etched characteristics of a 6″ (c.15 cm) molecular beam epitaxy Hg1- x Cd x Te/Si wafer is investigated. It is determined that the Hg1- x Cd x Te etch rate (ER) does not vary significantly with a change in the PR thickness. Also, the vertical ER of the PR is seen to be independent of the PR thickness, but the lateral ER is seen to reduce significantly with increased PR thickness. Indeed, very little reduction in the pixel mesa area post-dry etch is seen for the thicker PR. Consequently, the trench sidewall angle is also seen to vary as a function of the PR thickness. Since ICP is the more attractive choice for dry etching Hg1- x Cd x Te, this simple, cost-effective way to extend the capabilities of dry etching (larger mesa top area post-dry etch, ability to create tailor-made trench sidewall angles for optimal conformal passivation deposition, and potential for reduced dry etch damage) described here would allow for the fabrication of next generation infrared detectors with increased yield and reduced cost. Although similar results have been presented using the electron cyclotron resonance system to dry etch Hg1- x Cd x Te, to the best of our knowledge, this is the first time that such results have been presented using an ICP system.

Modeling micromechanical measurements of depth-varying properties with scanning acoustic microscopy

NASA Astrophysics Data System (ADS)

Marangos, Orestes; Misra, Anil

2018-02-01

Scanning acoustic microscopy (SAM) has been applied to measure the near-surface elastic properties of materials. For many substrates, the near-surface property is not constant but varies with depth. In this paper, we aim to interpret the SAM data from such substrates by modeling the interaction of the focused ultrasonic field with a substrate having a near-surface graded layer. The focused ultrasonic field solutions were represented as spherical harmonic expansions while the substrate solutions were represented as plane wave expansions. The bridging of the two solutions was achieved through the decomposition of the ultrasonic pressure fields in their angular spectra. Parametric studies were performed, which showed that near-surface graded layers exhibit distinctive frequency dependence of their reflectance functions. This behavior is characteristic to the material property gradation profile as well as the extent of the property gradation. The developed model was used to explain the frequency-dependent reflection coefficients measured from an acid-etched dentin substrate. Based on the model calculations, the elastic property variations of the acid-etched dentin near-surface indicate that the topmost part of the etched layer is very soft (3-6 GPa) and transitions to the native dentin through a depth of 27 and 36 microns.

Modifications of Fabrication of Vibratory Microgyroscopes

NASA Technical Reports Server (NTRS)

Bae, Sam Y.; Yee, Karl Y.; Wiberg, Dean

2005-01-01

A micromachining process for the fabrication of vibratory microgyroscopes from silicon wafers, and aspects of the microgyroscope design that are inextricably linked with the fabrication process, have been modified in an effort to increase production yields from perspectives of both quantity and quality. Prior to the modifications, the effective production yield of working microgyroscopes was limited to one or less per wafer. The modifications are part of a continuing effort to improve the design and increase production yields to more than 30 working microgyroscopes per wafer. A discussion of pertinent aspects of the unmodified design and the unmodified fabrication process is prerequisite to a meaningful description of the modifications. The design of the microgyroscope package was not conducive to high yield and rapid testing of many microgyroscopes. One of the major impediments to high yield and testing was found to lie in vibration- isolation beams around the four edges of each microgyroscope, which beams were found to be unnecessary for achieving high resonance quality factors (Q values) characterizing the vibrations of petallike cantilevers. The fabrication process included an 8- m-deep plasma etch. The purpose of the etch was to create 8- m vertical gaps, below which were to be placed large gold evaporated electrodes and sensing pads to drive and sense resonant vibrations of the "petals." The process also included a step in which bridges between dies were cut to separate the dies. The etched areas must be kept clean and smooth (free of debris and spikes), because any object close to 8 m high in those areas would stop the vibrations. However, it was found that after the etch, there remained some spikes with heights that were, variously, almost as high or as high as the etch depth. It also was found that the cutting of bridges created silicon debris, some of which lodged in the 8- m gaps and some of which landed on top of the petals. The masses added to the petals by the debris altered resonance frequencies and/or Q values to unacceptable degrees. Hence, the spikes and the debris have been conjectured to cause most of the observed malfunctions of newly fabricated microgyroscopes. Another pertinent aspect of the unmodified design and process was the fabrication of electrodes and the 8- m capacitance gap on a 500- m-thick wafer, and the fabrication of a 3-mm-thick baseplate from another wafer. It was necessary to bond these wafers to each other in an assembly step that was later found to be superfluous in that it could be eliminated by a suitable modification of the design.

Maskless and low-destructive nanofabrication on quartz by friction-induced selective etching

PubMed Central

2013-01-01

A low-destructive friction-induced nanofabrication method is proposed to produce three-dimensional nanostructures on a quartz surface. Without any template, nanofabrication can be achieved by low-destructive scanning on a target area and post-etching in a KOH solution. Various nanostructures, such as slopes, hierarchical stages and chessboard-like patterns, can be fabricated on the quartz surface. Although the rise of etching temperature can improve fabrication efficiency, fabrication depth is dependent only upon contact pressure and scanning cycles. With the increase of contact pressure during scanning, selective etching thickness of the scanned area increases from 0 to 2.9 nm before the yield of the quartz surface and then tends to stabilise after the appearance of a wear. Refabrication on existing nanostructures can be realised to produce deeper structures on the quartz surface. Based on Arrhenius fitting of the etching rate and transmission electron microscopy characterization of the nanostructure, fabrication mechanism could be attributed to the selective etching of the friction-induced amorphous layer on the quartz surface. As a maskless and low-destructive technique, the proposed friction-induced method will open up new possibilities for further nanofabrication. PMID:23531381

Measures and models for angular correlation and angular-linear correlation. [correlation of random variables

NASA Technical Reports Server (NTRS)

Johnson, R. A.; Wehrly, T.

1976-01-01

Population models for dependence between two angular measurements and for dependence between an angular and a linear observation are proposed. The method of canonical correlations first leads to new population and sample measures of dependence in this latter situation. An example relating wind direction to the level of a pollutant is given. Next, applied to pairs of angular measurements, the method yields previously proposed sample measures in some special cases and a new sample measure in general.

Femtosecond laser etching of dental enamel for bracket bonding.

PubMed

Kabas, Ayse Sena; Ersoy, Tansu; Gülsoy, Murat; Akturk, Selcuk

2013-09-01

The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique.

Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp

2015-11-15

Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +}more » ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.« less

Nanowire dopant measurement using secondary ion mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chia, A. C. E.; Boulanger, J. P.; Wood, B. A.

2015-09-21

A method is presented to improve the quantitative determination of dopant concentration in semiconductor nanowire (NW) arrays using secondary ion mass spectrometry (SIMS). SIMS measurements were used to determine Be dopant concentrations in a Be-doped GaAs thin film and NW arrays of various pitches that were dry-etched from the same film. A comparison of these measurements revealed a factor of 3 to 12 difference, depending on the NW array pitch, between the secondary Be ion yields of the film and the NW arrays, despite being identically doped. This was due to matrix effects and ion beam mixing of Be frommore » the NWs into the surrounding benzocyclobutene that was used to fill the space between the NWs. This indicates the need for etched NWs to be used as doping standards instead of 2D films when evaluating NWs of unknown doping by SIMS. Using the etched NWs as doping standards, NW arrays of various pitches grown by the vapour-liquid-solid mechanism were characterized by SIMS to yield valuable insights into doping mechanisms.« less

Near-infrared emission from mesoporous crystalline germanium

NASA Astrophysics Data System (ADS)

Boucherif, Abderraouf; Korinek, Andreas; Aimez, Vincent; Arès, Richard

2014-10-01

Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

NASA Astrophysics Data System (ADS)

Singh, Rajwinder

Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (<30 sec), comparable with the annealing times necessary for dopant activation of p-GaN films and provides an opportunity for streamlining process flow. Plasma etching degrades contact quality on n-GaN films and this degradation has been found to increase with the rf bias levels (ion energies) used, most notably in films with higher doping levels. Immersion in 1:1 mixture of hydrochloric acid and de-ionized water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

Angular distribution measurements of photo-neutron yields produced by 2.0 GeV electrons incident on thick targets.

PubMed

Lee, Hee-Seock; Ban, Syuichi; Sanami, Toshiya; Takahashi, Kazutoshi; Sato, Tatsuhiko; Shin, Kazuo; Chung, Chinwha

2005-01-01

A study of differential photo-neutron yields by irradiation with 2 GeV electrons has been carried out. In this extension of a previous study in which measurements were made at an angle of 90 degrees relative to incident electrons, the differential photo-neutron yield was obtained at two other angles, 48 degrees and 140 degrees, to study its angular characteristics. Photo-neutron spectra were measured using a pulsed beam time-of-flight method and a BC418 plastic scintillator. The reliable range of neutron energy measurement was 8-250 MeV. The neutron spectra were measured for 10 Xo-thick Cu, Sn, W and Pb targets. The angular distribution characteristics, together with the previous results for 90 degrees, are presented in the study. The experimental results are compared with Monte Carlo calculation results. The yields predicted by MCNPX 2.5 tend to underestimate the measured ones. The same trend holds for the comparison results using the EGS4 and PICA3 codes.

Design and grayscale fabrication of beamfanners in a silicon substrate

NASA Astrophysics Data System (ADS)

Ellis, Arthur Cecil

2001-11-01

This dissertation addresses important first steps in the development of a grayscale fabrication process for multiple phase diffractive optical elements (DOS's) in silicon. Specifically, this process was developed through the design, fabrication, and testing of 1-2 and 1-4 beamfanner arrays for 5-micron illumination. The 1-2 beamfanner arrays serve as a test-of- concept and basic developmental step toward the construction of the 1-4 beamfanners. The beamfanners are 50 microns wide, and have features with dimensions of between 2 and 10 microns. The Iterative Annular Spectrum Approach (IASA) method, developed by Steve Mellin of UAH, and the Boundary Element Method (BEM) are the design and testing tools used to create the beamfanner profiles and predict their performance. Fabrication of the beamfanners required the techniques of grayscale photolithography and reactive ion etching (RIE). A 2-3micron feature size 1-4 silicon beamfanner array was fabricated, but the small features and contact photolithographic techniques available prevented its construction to specifications. A second and more successful attempt was made in which both 1-4 and 1-2 beamfanner arrays were fabricated with a 5-micron minimum feature size. Photolithography for the UAH array was contracted to MEMS-Optical of Huntsville, Alabama. A repeatability study was performed, using statistical techniques, of 14 photoresist arrays and the subsequent RIE process used to etch the arrays in silicon. The variance in selectivity between the 14 processes was far greater than the variance between the individual etched features within each process. Specifically, the ratio of the variance of the selectivities averaged over each of the 14 etch processes to the variance of individual feature selectivities within the processes yielded a significance level below 0.1% by F-test, indicating that good etch-to-etch process repeatability was not attained. One of the 14 arrays had feature etch-depths close enough to design specifications for optical testing, but 5- micron IR illumination of the 1-4 and 1-2 beamfanners yielded no convincing results of beam splitting in the detector plane 340 microns from the surface of the beamfanner array.

Matrix metalloproteinase inhibitor modulates esterase-catalyzed degradation of resin-dentin interfaces.

PubMed

Serkies, Kyle B; Garcha, Reena; Tam, Laura E; De Souza, Grace M; Finer, Yoav

2016-12-01

Assess the modulating effect of matrix metalloproteinase (MMP) inhibition on simulated human salivary enzyme (SHSE)-catalyzed degradation of interfacial fracture-toughness (FT) of self-etched and total-etched resin-dentin interfaces. Miniature short-rod FT specimens (N=10/group) containing a resin composite bonded to human dentin, using a self-etch (Easy Bond, EB) or a total-etch (Scotchbond, SB) adhesives, were prepared with and without application of an MMP inhibitor (galardin). Specimens were non-incubated or incubated in phosphate buffered saline (PBS) or SHSE for 7, 30, 90, or 180-days. FT data were obtained using a universal testing machine. Incubation media were analyzed by high performance liquid chromatography (HPLC) for the presence of a 2,2-bis-[4-2(2-hydroxy-3-methacryloxypropoxy)phenyl]-propane (bisGMA)-derived degradation product, bis-hydroxy-propoxy-phenyl-propane (bisHPPP). Fractographic analysis was performed by scanning electron microscopy and image processing software (ImageJ). Statistical analysis was performed by ANOVA and Tukey's (p<0.05). More bisHPPP was detected in SHSE vs. PBS for both adhesive systems (p<0.05). EB specimens yielded no difference in FT and failed preferentially in the resin after >30-days (p<0.05). SB specimens yielded lower FT values after 180-days with SHSE ±galardin vs. 0-days/no-galardin (p<0.05) and failed preferentially in the hybrid-layer after >30-days (p<0.05). Galardin mildly modulated the change in fracture mode for both systems. Esterase-catalyzed degradation of total-etch interfaces is modulated by MMP-inhibition, however, self-etch interfaces possess greater biostability under simulated intra-oral conditions, regardless of MMP inhibition. This could be related to different chemical compositions and/or mode of adhesion. Copyright © 2016 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Acid etching of titanium for bonding with veneering composite resins.

PubMed

Ban, Seiji; Taniki, Toshio; Sato, Hideo; Kono, Hiroshi; Iwaya, Yukari; Miyamoto, Motoharu

2006-06-01

Commercially pure titanium (cpTi) was etched using three concentrated acids: 18% HCl, 43% H3PO4, and 48% H2SO4. The bond strengths between five types of veneering composite resin and eight cpTi treatments (involving combinations of sandblasting, acid etching in 48% H2SO4, and vacuum firing) were determined before and after 10,000 and 20,000 thermal cycles. There were no significant differences in the bond strength of resin to cpTi after etching in 48% H2SO4 at 90 degrees C for 15 minutes, at 60 degrees C for 15, 30, or 60 minutes, and after sandblasting with and without vacuum firing (p > 0.05); moreover, these treatments yielded the highest values. As for vacuum firing, it had no significant effect on resin bond strength to cpTi before or after 10,000 and 20,000 thermal cycles. We therefore concluded that acid etching in concentrated H2SO4 is a simple and effective surface modification method of titanium for bonding to veneering composite resins.

In situ nanoscale observations of gypsum dissolution by digital holographic microscopy.

PubMed

Feng, Pan; Brand, Alexander S; Chen, Lei; Bullard, Jeffrey W

2017-06-01

Recent topography measurements of gypsum dissolution have not reported the absolute dissolution rates, but instead focus on the rates of formation and growth of etch pits. In this study, the in situ absolute retreat rates of gypsum (010) cleavage surfaces at etch pits, at cleavage steps, and at apparently defect-free portions of the surface are measured in flowing water by reflection digital holographic microscopy. Observations made on randomly sampled fields of view on seven different cleavage surfaces reveal a range of local dissolution rates, the local rate being determined by the topographical features at which material is removed. Four characteristic types of topographical activity are observed: 1) smooth regions, free of etch pits or other noticeable defects, where dissolution rates are relatively low; 2) shallow, wide etch pits bounded by faceted walls which grow gradually at rates somewhat greater than in smooth regions; 3) narrow, deep etch pits which form and grow throughout the observation period at rates that exceed those at the shallow etch pits; and 4) relatively few, submicrometer cleavage steps which move in a wave-like manner and yield local dissolution fluxes that are about five times greater than at etch pits. Molar dissolution rates at all topographical features except submicrometer steps can be aggregated into a continuous, mildly bimodal distribution with a mean of 3.0 µmolm -2 s -1 and a standard deviation of 0.7 µmolm -2 s -1 .

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gray, D.C.; Tepermeister, I.; Sawin, H.H.

A multiple beam apparatus has been constructed to facilitate the study of ion-enhanced fluorine chemistry on undoped polysilicon and silicon dioxide surfaces by allowing the fluxes of fluorine (F) atoms and argon (Ar{sup +}) ions to be independently varied over several orders of magnitude. The chemical nature of the etching surfaces has been investigated following the vacuum transfer of the sample dies to an adjoining x-ray photoelectron spectroscopy facility. The etching {open_quotes}enhancement{close_quotes} effect of normally incident Ar{sup +} ions has been quantified over a wide range of ion energy through the use of Kaufman and electron cyclotron resonance-type ion sources.more » The increase in per ion etching yield of fluorine saturated silicon and silicon dioxide surfaces with increasing ion energy (E{sub ion}) was found to scale as (E{sub ion}{sup 1/2}-E{sub th}{sup 1/2}), where E{sub th} is the etching threshold energy for the process. Simple near-surface site occupation models have been proposed for the quantification of the ion-enhanced etching kinetics in these systems. Acceptable agreement has been found in comparison of these Ar{sup +}/F etching model predictions with similar Ar{sup +}/XeF{sub 2} studies reported in the literature, as well as with etching rate measurements made in F-based plasmas of gases such as SF{sub 6} and NF{sub 3}. 69 refs., 12 figs., 6 tabs.« less

The application of electrolytic photoetching and photopolishing to AISI 304 stainless steel and the electrolytic photoetching of amorphous cobalt alloy

NASA Astrophysics Data System (ADS)

Thomaz, Marita Duarte Canhao da Silva Pereira Fernandes

The results presented cover broad aspects of a quantitative investigation into the elecrolytic etching and polishing of metals and alloys through photographically produced dielectric stencils (Photoresists). A study of the potential field generated between a cathode and relatively smaller anode sites as those defined by a dielectric stencil was carried out. Numerical, analytical and graphical methods yielded answers to the factors determining lateral dissolution (undercut) at the anode/stencil interface. A quasi steady state numerical model simulating the transient behavior of the partially masked electrodes undergoing dissolution was obtained. AISI 304 stainless steel was electrolytically photoetched in 10% w/w HCl electrolyte. The optimised process parameters were utilised for quantifying the effects of galvanostatic etching of the anode as that defined by a relatively narrow adherent resist stencil. Stainless steel was also utilised in investigating electrolytic photopolishing. A polishing electrolyte (orthophosphoric acid-glycerol) was modified by the addition of a surfactant which yielded surface texture values of 70nm (Ra) and high levels of specular reflectance. These results were used in the production of features upon the metal surface through photographically produced precision stencils. The process was applied to the production of edge filters requiring high quality surface textures in precision recesses. Some of the new amorphous material exhibited high resistance to dissolution in commercially used spray etching formulations. One of these materials is a cobalt based alloy produced by chill block spinning. This material was also investigated and electro etched in 10% w/w HCl solution. Although passivity was not overcome, by selecting suitable operating parameters the successful electro photoetching of precision magnetic recording head laminations was achieved. Similarly, a polycrystalline nickel based alloy also exhibiting passivity in commercially used etchants was successfully etched in the above electrolyte.

Unique method for controlling device level overlay with high-NA optical overlay technique using YieldStar in a DRAM HVM environment

NASA Astrophysics Data System (ADS)

Park, Dong-Kiu; Kim, Hyun-Sok; Seo, Moo-Young; Ju, Jae-Wuk; Kim, Young-Sik; Shahrjerdy, Mir; van Leest, Arno; Soco, Aileen; Miceli, Giacomo; Massier, Jennifer; McNamara, Elliott; Hinnen, Paul; Böcker, Paul; Oh, Nang-Lyeom; Jung, Sang-Hoon; Chai, Yvon; Lee, Jun-Hyung

2018-03-01

This paper demonstrates the improvement using the YieldStar S-1250D small spot, high-NA, after-etch overlay in-device measurements in a DRAM HVM environment. It will be demonstrated that In-device metrology (IDM) captures after-etch device fingerprints more accurately compared to the industry-standard CDSEM. Also, IDM measurements (acquiring both CD and overlay) can be executed significantly faster increasing the wafer sampling density that is possible within a realistic metrology budget. The improvements to both speed and accuracy open the possibility of extended modeling and correction capabilities for control. The proof-book data of this paper shows a 36% improvement of device overlay after switching to control in a DRAM HVM environment using indevice metrology.

Distributions of neutron yields and doses around a water phantom bombarded with 290-MeV/nucleon and 430-MeV/nucleon carbon ions

NASA Astrophysics Data System (ADS)

Satoh, D.; Kajimoto, T.; Shigyo, N.; Itashiki, Y.; Imabayashi, Y.; Koba, Y.; Matsufuji, N.; Sanami, T.; Nakao, N.; Uozumi, Y.

2016-11-01

Double-differential neutron yields from a water phantom bombarded with 290-MeV/nucleon and 430-MeV/nucleon carbon ions were measured at emission angles of 15°, 30°, 45°, 60°, 75°, and 90°, and angular distributions of neutron yields and doses around the phantom were obtained. The experimental data were compared with results of the Monte-Carlo simulation code PHITS. The PHITS results showed good agreement with the measured data. On the basis of the PHITS simulation, we estimated the angular distributions of neutron yields and doses from 0° to 180° including thermal neutrons.

Pseudo-Linear Attitude Determination of Spinning Spacecraft

NASA Technical Reports Server (NTRS)

Bar-Itzhack, Itzhack Y.; Harman, Richard R.

2004-01-01

This paper presents the overall mathematical model and results from pseudo linear recursive estimators of attitude and rate for a spinning spacecraft. The measurements considered are vector measurements obtained by sun-sensors, fixed head star trackers, horizon sensors, and three axis magnetometers. Two filters are proposed for estimating the attitude as well as the angular rate vector. One filter, called the q-Filter, yields the attitude estimate as a quaternion estimate, and the other filter, called the D-Filter, yields the estimated direction cosine matrix. Because the spacecraft is gyro-less, Euler s equation of angular motion of rigid bodies is used to enable the estimation of the angular velocity. A simpler Markov model is suggested as a replacement for Euler's equation in the case where the vector measurements are obtained at high rates relative to the spacecraft angular rate. The performance of the two filters is examined using simulated data.

The acid-base resistant zone in three dentin bonding systems.

PubMed

Inoue, Go; Nikaido, Toru; Foxton, Richard M; Tagami, Junji

2009-11-01

An acid-base resistant zone has been found to exist after acid-base challenge adjacent to the hybrid layer using SEM. The aim of this study was to examine the acid-base resistant zone using three different bonding systems. Dentin disks were applied with three different bonding systems, and then a resin composite was light-cured to make dentin disk sandwiches. After acid-base challenge, the polished surfaces were observed using SEM. For both one- and two-step self-etching primer systems, an acid-base resistant zone was clearly observed adjacent to the hybrid layer - but with differing appearances. For the wet bonding system, the presence of an acid-base resistant zone was unclear. This was because the self-etching primer systems etched the dentin surface mildly, such that the remaining mineral phase of dentin and the bonding agent yielded clear acid-base resistant zones. In conclusion, the acid-base resistant zone was clearly observed when self-etching primer systems were used, but not so for the wet bonding system.

Controlling Shape and Plasmon Resonance of Pt-Etched Au@Ag Nanorods.

PubMed

Ye, Rongkai; Zhang, Yanping; Chen, Yuyu; Tang, Liangfeng; Wang, Qiong; Wang, Qianyu; Li, Bishan; Zhou, Xuan; Liu, Jianyu; Hu, Jianqiang

2018-05-22

Pt-based catalysts with novel structure have attracted great attention due to their outstanding performance. In this work, H 2 PtCl 6 was used as both precursor and etching agent to realize the shape-controlled synthesis of Pt-modified Au@Ag nanorods (NRs). During the synthesis, the as-prepared Ag shell played a crucial role in both protecting the Au NRs from being etched away by PtCl 6 2- and leading to an unusual growth mode of Pt component. The site-specified etching and/or growth depended on the concentration of H 2 PtCl 6 , where high-yield core-shell structure or dumbbell-like structure could be obtained. The shape-controlled synthesis also led to a tunable longitudinal surface plasmon resonance from ca. 649 to 900 nm. Meanwhile, the core-shell Pt-modified Au@Ag NRs showed approximately 4-fold enhancement in catalytic reduction reaction of p-nitrophenol than that of the Au NRs, suggesting the great potential for photocatalytic reaction.

Molecular dynamics simulations of plasma-surface interactions

NASA Astrophysics Data System (ADS)

Vegh, Joseph James

Molecular dynamics (MD) simulations are carried out to examine the fundamental mechanisms of plasma-surface interactions for various systems of interest to the semiconductor industry. These include ion and radical bombardment simulations of silicon, model low-k dielectric materials, and hydrocarbon (HC) based model photoresist materials. Simulations of fluorocarbon (FC), fluorine, and argon ion etching of silicon are conducted to find conditions under which the steady state etch of Si in the presence of a FC surface layer occurs. By varying the FC/F/Ar + ratios over a range of conditions, a correlation between FC layer thickness and Si etch yield (EY) is obtained that agrees qualitatively with experimentally observed trends. Further examination of this system allows for a Si etch mechanism to be proposed. This mechanism is similar to that seen in previous Si etching simulations where FC films do not form. The FC layer is observed to fluctuate in thickness during steady state Si etch, as the result of competition between FC deposition and sputtering of relatively large (> 6 C atoms) FC clusters during Ar+ impacts. This cluster ejection process is seen in all of the systems studied, and the properties of these clusters (composition, size, kinetic energy, etc.) are examined and catalogued. Ar+ and H radical and ion bombardment of a methylated Si surface is simulated as a model of plasma etching of low-k dielectric materials. The mechanisms and product distributions observed for 300 K H radical bombardment agree well with experiment. The etch characteristics of Ar+ bombardment are examined as a function of ion energy, and the corresponding variations in surface structure at high ion fluence are characterized. Various HC polymer surfaces are studied under ion and radical bombardment to examine plasma species interactions with model photoresist materials. Simulations of 100 eV Ar+ bombardment of polystyrene (PS), poly(4-methylstyrene) (P4MS), and poly(alpha-methylstyrene) (PalphaMS) show that for all of these materials (which have similar chemical compositions: PS: (C8H 8)x, PalphaMS and P4MS: (C9H 10)x), a densely crosslinked, dehydrogenated damaged layer forms at high ion fluences that greatly reduces the sputter yield of the material. During the initial transient period of bombardment, PalphaMS shows sputter yields nearly twice as high as P4MS or PS; polymer structure can play a role during the early stages of etch. Both the initial and high fluence etch characteristics match those observed experimentally. Further, fluctuations from cell-to-cell are much higher for the PalphaMS simulations, which may correlate to the increased roughening observed experimentally for PalphaMS. Additional simulations are carried out to examine the effects of H and F radical addition during Ar+ bombardment of PS. Both radical species are shown to inhibit and/or reverse the formation of the dehydrogenated layer that forms during bombardment with Ar+ alone. Further studies examine the effect of inert ion mass through simulations of Ar +, Xe+, and He+ bombardment of PS, amorphous C, and nanoscale features on diamond surfaces. The differences in penetration depth, kinetic energy deposition, and scattering patterns are suggestive of the differing etch characteristics that are seen experimentally for these ions. A discussion of dangling bond formation during ion bombardment and longer time-scale dynamics is also offered. A brief review of currently available potential energy functions is presented. Selected results from MD simulations that utilize some of these potentials and are closely related to the work in this dissertation are also discussed. The difficulties of expanding potential energy functions vis-a-vis commonly used ab initio quantum chemical calculations are also addressed.

Quark orbital dynamics in the proton from lattice QCD: From Ji to Jaffe-Manohar orbital angular momentum

NASA Astrophysics Data System (ADS)

Engelhardt, M.

2017-05-01

Given a Wigner distribution simultaneously characterizing quark transverse positions and momenta in a proton, one can directly evaluate their cross product, i.e., quark orbital angular momentum. The aforementioned distribution can be obtained by generalizing the proton matrix elements of quark bilocal operators which define transverse momentum-dependent parton distributions (TMDs); the transverse momentum information is supplemented with transverse position information by introducing an additional nonzero momentum transfer. A gauge connection between the quarks must be specified in the quark bilocal operators; the staple-shaped gauge link path used in TMD calculations yields the Jaffe-Manohar definition of orbital angular momentum, whereas a straight path yields the Ji definition. An exploratory lattice calculation, performed at the pion mass mπ=518 MeV , is presented which quasicontinuously interpolates between the two definitions and demonstrates that their difference can be clearly resolved. The resulting Ji orbital angular momentum is confronted with traditional evaluations based on Ji's sum rule. Jaffe-Manohar orbital angular momentum is enhanced in magnitude compared to its Ji counterpart.

Underlying role of mechanical rigidity and topological constraints in physical sputtering and reactive ion etching of amorphous materials

NASA Astrophysics Data System (ADS)

Bhattarai, Gyanendra; Dhungana, Shailesh; Nordell, Bradley J.; Caruso, Anthony N.; Paquette, Michelle M.; Lanford, William A.; King, Sean W.

2018-05-01

Analytical expressions describing ion-induced sputter or etch processes generally relate the sputter yield to the surface atomic binding energy (Usb) for the target material. While straightforward to measure for the crystalline elemental solids, Usb is more complicated to establish for amorphous and multielement materials due to composition-driven variations and incongruent sublimation. In this regard, we show that for amorphous multielement materials, the ion-driven yield can instead be better understood via a consideration of mechanical rigidity and network topology. We first demonstrate a direct relationship between Usb, bulk modulus, and ion sputter yield for the elements, and then subsequently prove our hypothesis for amorphous multielement compounds by demonstrating that the same relationships exist between the reactive ion etch (RIE) rate and nanoindentation Young's modulus for a series of a -Si Nx :H and a -Si OxCy :H thin films. The impact of network topology is further revealed via application of the Phillips-Thorpe theory of topological constraints, which directly relates the Young's modulus to the mean atomic coordination () for an amorphous solid. The combined analysis allows the trends and plateaus in the RIE rate to be ultimately reinterpreted in terms of the atomic structure of the target material through a consideration of . These findings establish the important underlying role of mechanical rigidity and network topology in ion-solid interactions and provide additional considerations for the design and optimization of radiation-hard materials in nuclear and outer space environments.

Effects of NH₄⁺ on Ce(IV) electro-regeneration in simulated and real spent TFT-LCD Cr-etching solutions.

PubMed

Chen, Te-San; Huang, Kuo-Lin; Lai, Yu-Chan; Kuo, Yi-Ming

2012-08-15

This investigation studies the electro-regeneration of Ce(IV) from Ce(III) in 4 M HNO(3) in the presence/absence of NH(4)(+) and real spent thin-film transistor liquid-crystal display (TFT-LCD) Cr-etching solutions. On Pt, at 2 A and 70 °C for 100 min, the Ce(IV) yield and apparent rate constant of Ce(III) oxidation in 4 M HNO(3) without NH(4)(+) were 100% and 5.54 × 10(-4) s(-1), respectively (and the activation energy was 13.1 kJ mol(-1)). Cyclic voltammetric and electrolytic measurements consistently support the noticeable inhibition by NH(4)(+) of Ce(III) oxidation and lowering of the Ce(IV) yield, respectively. The apparent diffusion coefficients for 0.2 and 0.02 M Ce(III) oxidation in 4 M HNO(3) that contained 0-0.6 M NH(4)(+) were (0.38-0.25) × 10(-5) and (1.6-0.9) × 10(-5) cm(2) s(-1), respectively. Because of combined effects of NH(4)(+) and anion impurities, the 100 min Ce(IV) yield of a real spent TFT-LCD Cr-etching solution (with [NH(4)(+)]/[Ce(III)] = 0.74 M/0.39 M) was 82%, lower than that of 4 M HNO(3) without NH(4)(+), but higher than those of 4 M HNO(3) that contained anion impurities with/without 0.4 M NH(4)(+). Copyright © 2012 Elsevier Ltd. All rights reserved.

Comparing the shear bond strength of direct and indirect composite inlays in relation to different surface conditioning and curing techniques

PubMed Central

Zorba, Yahya Orcun; Ilday, Nurcan Ozakar; Bayındır, Yusuf Ziya; Demirbuga, Sezer

2013-01-01

Objective: The aim of this study was to test the null hypothesis that different surface conditioning (etch and rinse and self-etch) and curing techniques (light cure/dual cure) had no effect on the shear bond strength of direct and indirect composite inlays. Materials and Methods: A total of 112 extracted human molar teeth were horizontally sectioned and randomly divided into two groups according to restoration technique (direct and indirect restorations). Each group was further subdivided into seven subgroups (n = 8) according to bonding agent (etch and rinse adhesives Scotchbond multi-purpose plus, All-Bond 3, Adper Single Bond and Prime Bond NT; and self-etch adhesives Clearfil Liner Bond, Futurabond DC and G bond). Indirect composites were cemented to dentin surfaces using dual-curing luting cement. Shear bond strength of specimens was tested using a Universal Testing Machine. Two samples from each subgroup were evaluated under Scanning electron microscopy to see the failing modes. Data was analyzed using independent sample t-tests and Tukey's tests. Results: Surface conditioning and curing of bonding agents were all found to have significant effects on shear bond strength (P < 0.05) of both direct and indirect composite inlays. With direct restoration, etch and rinse systems and dual-cured bonding agents yielded higher bond strengths than indirect restoration, self-etch systems and light-cured bonding agents. Conclusions: The results of the present study indicated that direct restoration to be a more reliable method than indirect restoration. Although etch and rinse bonding systems showed higher shear bond strength to dentin than self-etch systems, both systems can be safely used for the adhesion of direct as well as indirect restorations. PMID:24932118

Comparing the shear bond strength of direct and indirect composite inlays in relation to different surface conditioning and curing techniques.

PubMed

Zorba, Yahya Orcun; Ilday, Nurcan Ozakar; Bayındır, Yusuf Ziya; Demirbuga, Sezer

2013-10-01

The aim of this study was to test the null hypothesis that different surface conditioning (etch and rinse and self-etch) and curing techniques (light cure/dual cure) had no effect on the shear bond strength of direct and indirect composite inlays. A total of 112 extracted human molar teeth were horizontally sectioned and randomly divided into two groups according to restoration technique (direct and indirect restorations). Each group was further subdivided into seven subgroups (n = 8) according to bonding agent (etch and rinse adhesives Scotchbond multi-purpose plus, All-Bond 3, Adper Single Bond and Prime Bond NT; and self-etch adhesives Clearfil Liner Bond, Futurabond DC and G bond). Indirect composites were cemented to dentin surfaces using dual-curing luting cement. Shear bond strength of specimens was tested using a Universal Testing Machine. Two samples from each subgroup were evaluated under Scanning electron microscopy to see the failing modes. Data was analyzed using independent sample t-tests and Tukey's tests. Surface conditioning and curing of bonding agents were all found to have significant effects on shear bond strength (P < 0.05) of both direct and indirect composite inlays. With direct restoration, etch and rinse systems and dual-cured bonding agents yielded higher bond strengths than indirect restoration, self-etch systems and light-cured bonding agents. The results of the present study indicated that direct restoration to be a more reliable method than indirect restoration. Although etch and rinse bonding systems showed higher shear bond strength to dentin than self-etch systems, both systems can be safely used for the adhesion of direct as well as indirect restorations.

High-Average-Power Diffraction Pulse-Compression Gratings Enabling Next-Generation Ultrafast Laser Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alessi, D.

Pulse compressors for ultrafast lasers have been identified as a technology gap in the push towards high peak power systems with high average powers for industrial and scientific applications. Gratings for ultrashort (sub-150fs) pulse compressors are metallic and can absorb a significant percentage of laser energy resulting in up to 40% loss as well as thermal issues which degrade on-target performance. We have developed a next generation gold grating technology which we have scaled to the petawatt-size. This resulted in improvements in efficiency, uniformity and processing as compared to previous substrate etched gratings for high average power. This new designmore » has a deposited dielectric material for the grating ridge rather than etching directly into the glass substrate. It has been observed that average powers as low as 1W in a compressor can cause distortions in the on-target beam. We have developed and tested a method of actively cooling diffraction gratings which, in the case of gold gratings, can support a petawatt peak power laser with up to 600W average power. We demonstrated thermo-mechanical modeling of a grating in its use environment and benchmarked with experimental measurement. Multilayer dielectric (MLD) gratings are not yet used for these high peak power, ultrashort pulse durations due to their design challenges. We have designed and fabricated broad bandwidth, low dispersion MLD gratings suitable for delivering 30 fs pulses at high average power. This new grating design requires the use of a novel Out Of Plane (OOP) compressor, which we have modeled, designed, built and tested. This prototype compressor yielded a transmission of 90% for a pulse with 45 nm bandwidth, and free of spatial and angular chirp. In order to evaluate gratings and compressors built in this project we have commissioned a joule-class ultrafast Ti:Sapphire laser system. Combining the grating cooling and MLD technologies developed here could enable petawatt laser systems to operate at 50kW average power.« less

Rubbing time and bonding performance of one-step adhesives to primary enamel and dentin.

PubMed

Botelho, Maria Paula Jacobucci; Isolan, Cristina Pereira; Schwantz, Júlia Kaster; Lopes, Murilo Baena; Moraes, Rafael Ratto de

2017-01-01

This study investigated whether increasing the concentration of acidic monomers in one-step adhesives would allow reducing their application time without interfering with the bonding ability to primary enamel and dentin. Experimental one-step self-etch adhesives were formulated with 5 wt% (AD5), 20 wt% (AD20), or 35 wt% (AD35) acidic monomer. The adhesives were applied using rubbing motion for 5, 10, or 20 s. Bond strengths to primary enamel and dentin were tested under shear stress. A commercial etch-and-rinse adhesive (Single Bond 2; 3M ESPE) served as reference. Scanning electron microscopy was used to observe the morphology of bonded interfaces. Data were analysed at p<0.05. In enamel, AD35 had higher bond strength when rubbed for at least 10 s, while application for 5 s generated lower bond strength. In dentin, increased acidic monomer improved bonding only for 20 s rubbing time. The etch-and-rinse adhesive yielded higher bond strength to enamel and similar bonding to dentin as compared with the self-etch adhesives. The adhesive layer was thicker and more irregular for the etch-and-rinse material, with no appreciable differences among the self-etch systems. Overall, increasing the acidic monomer concentration only led to an increase in bond strength to enamel when the rubbing time was at least 10 s. In dentin, despite the increase in bond strength with longer rubbing times, the results favoured the experimental adhesives compared to the conventional adhesive. Reduced rubbing time of self-etch adhesives should be avoided in the clinical setup.

Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogart, Katherine Huderle Andersen; Shul, Randy John; Stevens, Jeffrey

2008-10-01

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al{sub x} Ga{sub 1-x} N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greatermore » than 95% of that of a perfectly smooth and vertical facet.« less

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Calculation of the yield of fault-free laser diodes from the characteristics of the (100)InP substrate material used in epitaxial double heterostructures

NASA Astrophysics Data System (ADS)

Baerwolff, A.; Enders, P.; Knauer, A.; Linke, D.; Zeimer, U.

1988-11-01

It is shown that the yield of fault-free laser diodes is related to the density and distribution of dislocations in the substrate. A method is described for visualization of etch pits and of their relationship to defects in the substrate.

Ripple formation on Si surfaces during plasma etching in Cl2

NASA Astrophysics Data System (ADS)

Nakazaki, Nobuya; Matsumoto, Haruka; Sonobe, Soma; Hatsuse, Takumi; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2018-05-01

Nanoscale surface roughening and ripple formation in response to ion incidence angle has been investigated during inductively coupled plasma etching of Si in Cl2, using sheath control plates to achieve the off-normal ion incidence on blank substrate surfaces. The sheath control plate consisted of an array of inclined trenches, being set into place on the rf-biased electrode, where their widths and depths were chosen in such a way that the sheath edge was pushed out of the trenches. The distortion of potential distributions and the consequent deflection of ion trajectories above and in the trenches were then analyzed based on electrostatic particle-in-cell simulations of the plasma sheath, to evaluate the angular distributions of ion fluxes incident on substrates pasted on sidewalls and/or at the bottom of the trenches. Experiments showed well-defined periodic sawtooth-like ripples with their wave vector oriented parallel to the direction of ion incidence at intermediate off-normal angles, while relatively weak corrugations or ripplelike structures with the wave vector perpendicular to it at high off-normal angles. Possible mechanisms for the formation of surface ripples during plasma etching are discussed with the help of Monte Carlo simulations of plasma-surface interactions and feature profile evolution. The results indicate the possibility of providing an alternative to ion beam sputtering for self-organized formation of ordered surface nanostructures.

Diffusion kinetics of the glucose/glucose oxidase system in swift heavy ion track-based biosensors

NASA Astrophysics Data System (ADS)

Fink, Dietmar; Vacik, Jiri; Hnatowicz, V.; Muñoz Hernandez, G.; Garcia Arrelano, H.; Alfonta, Lital; Kiv, Arik

2017-05-01

For understanding of the diffusion kinetics and their optimization in swift heavy ion track-based biosensors, recently a diffusion simulation was performed. This simulation aimed at yielding the degree of enrichment of the enzymatic reaction products in the highly confined space of the etched ion tracks. A bunch of curves was obtained for the description of such sensors that depend only on the ratio of the diffusion coefficient of the products to that of the analyte within the tracks. As hitherto none of these two diffusion coefficients is accurately known, the present work was undertaken. The results of this paper allow one to quantify the previous simulation and hence yield realistic predictions of glucose-based biosensors. At this occasion, also the influence of the etched track radius on the diffusion coefficients was measured and compared with earlier prediction.

Ion beam texturing

NASA Technical Reports Server (NTRS)

Hudson, W. R.

1976-01-01

A microscopic surface texture is created by sputter etching a surface while simultaneously sputter depositing a lower sputter yield material onto the surface. A xenon ion beam source has been used to perform this texturing process on samples as large as three centimeters in diameter. Ion beam textured surface structures have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, Stainless steel, Au, and Ag. Surfaces have been textured using a variety of low sputter yield materials - Ta, Mo, Nb, and Ti. The initial stages of the texture creation have been documented, and the technique of ion beam sputter removal of any remaining deposited material has been studied. A number of other texturing parameters have been studied such as the variation of the texture with ion beam power, surface temperature, and the rate of texture growth with sputter etching time.

Scattering of hydrogen, nitrogen and water ions from micro pore optic plates for application in spaceborne plasma instrumentation

NASA Astrophysics Data System (ADS)

Stude, Joan; Wieser, Martin; Barabash, Stas

2016-10-01

Time-of-flight mass spectrometers for upcoming space missions into enhanced radiation environments need to be small, light weight and energy efficient. Time-of-flight systems using surface interactions as start-event generation can be smaller than foil-type instruments. Start surfaces for such applications need to provide narrow angular scattering, high ionization yields and high secondary electron emissions to be effective. We measured the angular scattering, energy distribution and positive ionization yield of micro pore optics for incident hydrogen, nitrogen and water ions at 2 keV. Positive ionization yields of 2% for H+ , 0.5% for N+ and 0.2% for H2O+ were detected.

Improved control of multi-layer overlay in advanced 8nm logic nodes

NASA Astrophysics Data System (ADS)

Kim, Tae-Sun; Park, Young-Sik; Kim, Yong-Chul; Kim, Byoung-Hoon; Lee, Ji-Hun; Kwak, Min-Keun; Choi, Sung-Won; Park, Joon-Soo; Yang, Hong-Cheon; Meixner, Philipp; Lee, Dong-jin; Kwon, Oh-Sung; Kim, Hyun-Su; Park, Jin-Tae; Lee, Sung-Min; Grouwstra, Cedric; van der Meijden, Vidar; El Kodadi, Mohamed; Kim, Chris; Guittet, Pierre-Yves; Nooitgedagt, Tjitte

2018-03-01

With the increase of litho-etch steps the industry requires metrology to deliver solutions to improve throughput of overlay measurements without impacting accuracy. ASML's YieldStar 350E is capable of utilizing targets, which can measure the overlay of multiple layers simultaneously. For the work discussed in this paper, an evaluation is performed on Logic product wafers using both single-layer and multi-layer (MLT) quad type targets (able to capture up to four litho-etch steps). Different target types were compared in terms of Move-and-Acquire (MA) time, residual and matching to SEM. Using the MLT targets, an MA time improvement of 56% was demonstrated on the singlelayer. The maximum delta between the overlay residual among the YieldStar targets after applying an high order model was shown to be 0.05 nm. In comparison to after-etch overlay, the correlation of the MLT target was determined with an R2 > 0.95 using a set-get wafer with induced 10 nm overlay range. On a normal production wafer, the correlation was R2 > 0.67, which is high on a wafer without induced overlay. The comparison of modeling parameters between SEM and MLT targets shows a good match (< 0.16nm) as well.

Design of a Binary Grating with Subwavelength Features that Acts as a Polarizing Beam Splitter.

PubMed

Pajewski, L; Borghi, R; Schettini, G; Frezza, F; Santarsiero, M

2001-11-10

A binary diffractive optical element, acting as a polarizing beam splitter, is proposed and analyzed. It behaves like a transmissive blazed grating, working on the first or the second diffraction order, depending on the polarization state of the incident radiation. The grating-phase profile required for both polarization states is obtained by means of suitably sized subwavelength groups etched in an isotropic dielectric medium. A rigorous electromagnetic analysis of the grating is presented, and numerical results concerning its performances in terms of diffraction efficiency as well as frequency and angular bandwidths are provided.

Microfluidic flow rate detection based on integrated optical fiber cantilever.

PubMed

Lien, Victor; Vollmer, Frank

2007-10-01

We demonstrate an integrated microfluidic flow sensor with ultra-wide dynamic range, suitable for high throughput applications such as flow cytometry and particle sorting/counting. A fiber-tip cantilever transduces flow rates to optical signal readout, and we demonstrate a dynamic range from 0 to 1500 microL min(-1) for operation in water. Fiber-optic sensor alignment is guided by preformed microfluidic channels, and the dynamic range can be adjusted in a one-step chemical etch. An overall non-linear response is attributed to the far-field angular distribution of single-mode fiber output.

Optimized piranha etching process for SU8-based MEMS and MOEMS construction

PubMed Central

Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

2011-01-01

We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides. PMID:21423840

Optimized piranha etching process for SU8-based MEMS and MOEMS construction.

PubMed

Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

2010-11-01

We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H(2)O(2):H(2)SO(4)) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO(2) and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides.

Optimized piranha etching process for SU8-based MEMS and MOEMS construction

NASA Astrophysics Data System (ADS)

Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

2010-11-01

We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides.

Refined tip preparation by electrochemical etching and ultrahigh vacuum treatment to obtain atomically sharp tips for scanning tunneling microscope and atomic force microscope.

PubMed

Hagedorn, Till; El Ouali, Mehdi; Paul, William; Oliver, David; Miyahara, Yoichi; Grütter, Peter

2011-11-01

A modification of the common electrochemical etching setup is presented. The described method reproducibly yields sharp tungsten tips for usage in the scanning tunneling microscope and tuning fork atomic force microscope. In situ treatment under ultrahigh vacuum (p ≤10(-10) mbar) conditions for cleaning and fine sharpening with minimal blunting is described. The structure of the microscopic apex of these tips is atomically resolved with field ion microscopy and cross checked with field emission. © 2011 American Institute of Physics

Near-field collimation of light carrying orbital angular momentum with bull's-eye-assisted plasmonic coaxial waveguides.

PubMed

Pu, Mingbo; Ma, Xiaoliang; Zhao, Zeyu; Li, Xiong; Wang, Yanqin; Gao, Hui; Hu, Chenggang; Gao, Ping; Wang, Changtao; Luo, Xiangang

2015-07-10

The orbital angular momentum (OAM) of light, as an emerging hotspot in optics and photonics, introduces many degrees of freedom for applications ranging from optical communication and quantum processing to micromanipulation. To achieve a high degree of integration, optical circuits for OAM light are essential, which are, however, challenging in the optical regime owing to the lack of well-developed theory. Here we provide a scheme to guide and collimate the OAM beam at the micro- and nano-levels. The coaxial plasmonic slit was exploited as a naturally occurring waveguide for light carrying OAM. Concentric grooves etched on the output surface of the coaxial waveguide were utilized as a plasmonic metasurface to couple the OAM beam to free space with greatly increased beam directivity. Experimental results at λ = 532 nm validated the novel transportation and collimating effect of the OAM beam. Furthermore, dynamic tuning of the topological charges was demonstrated by using a liquid crystal spatial light modulator (SLM).

Near-field collimation of light carrying orbital angular momentum with bull’s-eye-assisted plasmonic coaxial waveguides

NASA Astrophysics Data System (ADS)

Pu, Mingbo; Ma, Xiaoliang; Zhao, Zeyu; Li, Xiong; Wang, Yanqin; Gao, Hui; Hu, Chenggang; Gao, Ping; Wang, Changtao; Luo, Xiangang

2015-07-01

The orbital angular momentum (OAM) of light, as an emerging hotspot in optics and photonics, introduces many degrees of freedom for applications ranging from optical communication and quantum processing to micromanipulation. To achieve a high degree of integration, optical circuits for OAM light are essential, which are, however, challenging in the optical regime owing to the lack of well-developed theory. Here we provide a scheme to guide and collimate the OAM beam at the micro- and nano-levels. The coaxial plasmonic slit was exploited as a naturally occurring waveguide for light carrying OAM. Concentric grooves etched on the output surface of the coaxial waveguide were utilized as a plasmonic metasurface to couple the OAM beam to free space with greatly increased beam directivity. Experimental results at λ = 532 nm validated the novel transportation and collimating effect of the OAM beam. Furthermore, dynamic tuning of the topological charges was demonstrated by using a liquid crystal spatial light modulator (SLM).

Near-field collimation of light carrying orbital angular momentum with bull’s-eye-assisted plasmonic coaxial waveguides

PubMed Central

Pu, Mingbo; Ma, Xiaoliang; Zhao, Zeyu; Li, Xiong; Wang, Yanqin; Gao, Hui; Hu, Chenggang; Gao, Ping; Wang, Changtao; Luo, Xiangang

2015-01-01

The orbital angular momentum (OAM) of light, as an emerging hotspot in optics and photonics, introduces many degrees of freedom for applications ranging from optical communication and quantum processing to micromanipulation. To achieve a high degree of integration, optical circuits for OAM light are essential, which are, however, challenging in the optical regime owing to the lack of well-developed theory. Here we provide a scheme to guide and collimate the OAM beam at the micro- and nano-levels. The coaxial plasmonic slit was exploited as a naturally occurring waveguide for light carrying OAM. Concentric grooves etched on the output surface of the coaxial waveguide were utilized as a plasmonic metasurface to couple the OAM beam to free space with greatly increased beam directivity. Experimental results at λ = 532 nm validated the novel transportation and collimating effect of the OAM beam. Furthermore, dynamic tuning of the topological charges was demonstrated by using a liquid crystal spatial light modulator (SLM). PMID:26159423

Measurement of ion beam angular distribution at different helium gas pressures in a plasma focus device by large-area polycarbonate detectors

NASA Astrophysics Data System (ADS)

Sohrabi, M.; Habibi, M.; Ramezani, V.

2017-02-01

The paper presents an experimental study and analysis of full helium ion density angular distributions in a 4-kJ plasma focus device (PFD) at pressures of 10, 15, 25, and 30 mbar using large-area polycarbonate track detectors (PCTDs) (15-cm etchable diameter) processed by 50-Hz-HV electrochemical etching (ECE). Helium ion track distributions at different pressures, in particular, at the main axis of the PFD are presented. Maximum ion track density of 4.4 × 104 tracks/cm2 was obtained in the PCTD placed 6 cm from the anode. The ion distributions for all pressures applied are ring-shaped, which is possibly due to the hollow cylindrical copper anode used. The large-area PCTD processed by ECE proves, at the present state-of-theart, a superior method for direct observation and analysis of ion distributions at a glance with minimum efforts and time. Some observations of the ion density distributions at different pressures are reported and discussed.

Yield enhancement of 3D flash devices through broadband brightfield inspection of the channel hole process module

NASA Astrophysics Data System (ADS)

Lee, Jung-Youl; Seo, Il-Seok; Ma, Seong-Min; Kim, Hyeon-Soo; Kim, Jin-Woong; Kim, DoOh; Cross, Andrew

2013-03-01

The migration to a 3D implementation for NAND flash devices is seen as the leading contender to replace traditional planar NAND architectures. However the strategy of replacing shrinking design rules with greater aspect ratios is not without its own set of challenges. The yield-limiting defect challenges for the planar NAND front end were primarily bridges, protrusions and residues at the bottom of the gates, while the primary challenges for front end 3D NAND is buried particles, voids and bridges in the top, middle and bottom of high aspect ratio structures. Of particular interest are the yield challenges in the channel hole process module and developing an understanding of the contribution of litho and etch defectivity for this challenging new integration scheme. The key defectivity and process challenges in this module are missing, misshapen channel holes or under-etched channel holes as well as reducing noise sources related to other none yield limiting defect types and noise related to the process integration scheme. These challenges are expected to amplify as the memory density increases. In this study we show that a broadband brightfield approach to defect monitoring can be uniquely effective for the channel hole module. This approach is correlated to end-of-line (EOL) Wafer Bin Map for verification of capability.

Shear Bond Strength of Self-etching Adhesives to Cavities Prepared by Diamond Bur or Er,Cr:YSGG Laser and Effect of Prior Acid Etching.

PubMed

Jhingan, Pulkit; Sachdev, Vinod; Sandhu, Meera; Sharma, Karan

2015-12-01

To compare and evaluate shear bond strength of self-etching adhesives bonded to cavities prepared by diamond bur or Er,Cr:YSGG laser and the effect of prior acid etching on shear bond strength. Ninety-six caries-free human premolars were selected and divided into 2 groups depending on mode of cavity preparation (48 teeth each). Cavities were prepared with Er,Cr:YSGG laser in group 1 and diamond burs in an air-turbine handpiece in group 2. Groups 1 and 2 were further subdivided into three subgroups of 8 teeth each, which were bonded with sixth- or seventh-generation adhesives with or without prior acid etching, followed by restoration of all samples with APX Flow. These samples were subjected to shear bond strength testing. In addition, the surface morphology of 24 samples each from groups 1 and 2 was evaluated using SEM. Data were analyzed using the Shapiro-Wilk test, one- and two-way ANOVA, the t-test, and the least significant difference test, which showed that the data were normally distributed (p > 0.05). The shear bond strength of adhesives in cavities prepared by Er,Cr:YSGG laser was significantly higher than in diamond bur-prepared cavities (p < 0.05). SEM analysis showed a smear-layer-free anfractuous surface on laser-ablated teeth, in contrast to conventional bur-prepared teeth. The Er,Cr:YSGG laser-ablated surface proved to be more receptive for adhesion than those prepared by diamond bur irrespective of the bonding agent used. Seventh-generation adhesives yielded higher shear bond strength than did sixth-generation adhesives. Prior acid etching decreased the shear bond strength of self-etching adhesives.

Rubbing time and bonding performance of one-step adhesives to primary enamel and dentin

PubMed Central

Botelho, Maria Paula Jacobucci; Isolan, Cristina Pereira; Schwantz, Júlia Kaster; Lopes, Murilo Baena; de Moraes, Rafael Ratto

2017-01-01

Abstract Objectives: This study investigated whether increasing the concentration of acidic monomers in one-step adhesives would allow reducing their application time without interfering with the bonding ability to primary enamel and dentin. Material and methods: Experimental one-step self-etch adhesives were formulated with 5 wt% (AD5), 20 wt% (AD20), or 35 wt% (AD35) acidic monomer. The adhesives were applied using rubbing motion for 5, 10, or 20 s. Bond strengths to primary enamel and dentin were tested under shear stress. A commercial etch-and-rinse adhesive (Single Bond 2; 3M ESPE) served as reference. Scanning electron microscopy was used to observe the morphology of bonded interfaces. Data were analysed at p<0.05. Results: In enamel, AD35 had higher bond strength when rubbed for at least 10 s, while application for 5 s generated lower bond strength. In dentin, increased acidic monomer improved bonding only for 20 s rubbing time. The etch-and-rinse adhesive yielded higher bond strength to enamel and similar bonding to dentin as compared with the self-etch adhesives. The adhesive layer was thicker and more irregular for the etch-and-rinse material, with no appreciable differences among the self-etch systems. Conclusion: Overall, increasing the acidic monomer concentration only led to an increase in bond strength to enamel when the rubbing time was at least 10 s. In dentin, despite the increase in bond strength with longer rubbing times, the results favoured the experimental adhesives compared to the conventional adhesive. Reduced rubbing time of self-etch adhesives should be avoided in the clinical setup. PMID:29069150

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.

PubMed

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

2014-08-11

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm²/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased.

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

PubMed Central

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

2014-01-01

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm2/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased. PMID:28788159

EUV local CDU healing performance and modeling capability towards 5nm node

NASA Astrophysics Data System (ADS)

Jee, Tae Kwon; Timoshkov, Vadim; Choi, Peter; Rio, David; Tsai, Yu-Cheng; Yaegashi, Hidetami; Koike, Kyohei; Fonseca, Carlos; Schoofs, Stijn

2017-10-01

Both local variability and optical proximity correction (OPC) errors are big contributors to the edge placement error (EPE) budget which is closely related to the device yield. The post-litho contact hole healing will be demonstrated to meet after-etch local variability specifications using a low dose, 30mJ/cm2 dose-to-size, positive tone developed (PTD) resist with relevant throughput in high volume manufacturing (HVM). The total local variability of the node 5nm (N5) contact holes will be characterized in terms of local CD uniformity (LCDU), local placement error (LPE), and contact edge roughness (CER) using a statistical methodology. The CD healing process has complex etch proximity effects, so the OPC prediction accuracy is challenging to meet EPE requirements for the N5. Thus, the prediction accuracy of an after-etch model will be investigated and discussed using ASML Tachyon OPC model.

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Shear bond strength and SEM morphology evaluation of different dental adhesives to enamel prepared with ER:YAG laser

PubMed Central

Pires, Patrícia T.; Ferreira, João C.; Oliveira, Sofia A.; Azevedo, Álvaro F.; Dias, Walter R.; Melo, Paulo R.

2013-01-01

Context: Early observations of enamel surfaces prepared by erbium lasers motivated clinicians to use laser as an alternative to chemical etching. Aims: Evaluate shear bond strength (SBS) values of different dental adhesives on Erbium:Yttrium Aluminum Garnet (Er:YAG) laser prepared enamel and to evaluate possible etching patterns correlations between dental adhesives and SBS values. Subjects and Methods: One hundred bovine incisors were randomly assigned to SBS tests on enamel (n = 15) and to enamel morphology analysis (n = 5) after Er:YAG laser preparation as follows: Group I – 37% phosphoric acid (PA)+ ExciTE®; Group II – ExciTE®; Group III – AdheSE® self-etching; Group IV – FuturaBond® no-rinse. NR; Group V – Xeno® V. Teeth were treated with the adhesive systems and subjected to thermal cycling. SBS were performed in a universal testing machine at 5 mm/min. Statistical Analysis Used: One-way ANOVA and post-hoc tests (P < 0.05). For the morphology evaluation, specimens were immersed in Ethylenediamine tetraacetic acid (EDTA) and the etching pattern analyzed under Scanning Electron Microscope (SEM). Results: Mean bond strengths were Group I – 47.17 ± 1.61 MPa (type I etching pattern); Group II – 32.56 ± 1.64 MPa, Group III – 29.10 ± 1.34 MPa, Group IV – 23.32 ± 1.53 MPa (type III etching pattern); Group V – 24.43 MPa ± 1.55 (type II etching pattern). Conclusions: Different adhesive systems yielded significantly different SBSs. Acid etching significantly increased the adhesion in laser treated enamel. No differences in SBS values were obtained between AdheSE® and ExciTE® without condition with PA. FuturaBond® NR and Xeno® V showed similar SBS, which was lower in comparison to the others adhesives. No correlation between enamel surface morphology and SBS values was observed, except when PA was used. PMID:23853447

Shear bond strength and SEM morphology evaluation of different dental adhesives to enamel prepared with ER:YAG laser.

PubMed

Pires, Patrícia T; Ferreira, João C; Oliveira, Sofia A; Azevedo, Alvaro F; Dias, Walter R; Melo, Paulo R

2013-01-01

Early observations of enamel surfaces prepared by erbium lasers motivated clinicians to use laser as an alternative to chemical etching. Evaluate shear bond strength (SBS) values of different dental adhesives on Erbium:Yttrium Aluminum Garnet (Er:YAG) laser prepared enamel and to evaluate possible etching patterns correlations between dental adhesives and SBS values. One hundred bovine incisors were randomly assigned to SBS tests on enamel (n = 15) and to enamel morphology analysis (n = 5) after Er:YAG laser preparation as follows: Group I - 37% phosphoric acid (PA)+ ExciTE(®); Group II - ExciTE(®); Group III - AdheSE(®) self-etching; Group IV - FuturaBond(®) no-rinse. NR; Group V - Xeno(®) V. Teeth were treated with the adhesive systems and subjected to thermal cycling. SBS were performed in a universal testing machine at 5 mm/min. One-way ANOVA and post-hoc tests (P < 0.05). For the morphology evaluation, specimens were immersed in Ethylenediamine tetraacetic acid (EDTA) and the etching pattern analyzed under Scanning Electron Microscope (SEM). Mean bond strengths were Group I - 47.17 ± 1.61 MPa (type I etching pattern); Group II - 32.56 ± 1.64 MPa, Group III - 29.10 ± 1.34 MPa, Group IV - 23.32 ± 1.53 MPa (type III etching pattern); Group V - 24.43 MPa ± 1.55 (type II etching pattern). Different adhesive systems yielded significantly different SBSs. Acid etching significantly increased the adhesion in laser treated enamel. No differences in SBS values were obtained between AdheSE(®) and ExciTE(®) without condition with PA. FuturaBond(®) NR and Xeno(®) V showed similar SBS, which was lower in comparison to the others adhesives. No correlation between enamel surface morphology and SBS values was observed, except when PA was used.

Theoretical analysis of a distributed polarimetric sensor with birefringent optical fibers in noncoherent light.

PubMed

Belgnaoui, Y; Picherit, F; Turpin, M

1994-08-01

We have studied the influence of the angular rotations among four birefringent optical fibers on the performance of a system of intrinsic sensors in noncoherent light. The results obtained by the Jones formalism show that angular rotations of the order of 5 degrees are sufficient to yield the visibility required for detection of the parameters of interest. As the angular rotations come closer to 1 degrees , which is experimentally more difficult, the signal has better contrast.

Spin-Orbit Coupling and the Conservation of Angular Momentum

ERIC Educational Resources Information Center

Hnizdo, V.

2012-01-01

In nonrelativistic quantum mechanics, the total (i.e. orbital plus spin) angular momentum of a charged particle with spin that moves in a Coulomb plus spin-orbit-coupling potential is conserved. In a classical nonrelativistic treatment of this problem, in which the Lagrange equations determine the orbital motion and the Thomas equation yields the…

Ion guiding accompanied by formation of neutrals in polyethylene terephthalate polymer nanocapillaries: Further insight into a self-organizing process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juhasz, Z.; Sulik, B.; Racz, R.

2010-12-15

A relatively large yield of neutralized atoms was observed when 3 keV Ar{sup 7+} ions were guided trough polyethylene terephthalate nanocapillaries. Time and deposited-charge dependence of the angular distribution of both the guided ions and the neutrals was measured simultaneously using a two-dimensional multichannel plate detector. The yield of neutrals increased significantly faster than that of guided ions and saturated typically at a few percent level. In accordance with earlier observations, both the yield and the mean emission angle of the guided ions exhibited strong oscillations. For the atoms, the equilibrium was achieved not only faster, but also without significantmore » oscillations in yield and angular position. A phase analysis of these time dependencies provides insight into the dynamic features of the self-organizing mechanisms, which leads to ion guiding in insulating nanocapillaries.« less

Vibration nullification of MEMS device using input shaping

NASA Astrophysics Data System (ADS)

Jordan, Scott; Lawrence, Eric M.

2003-07-01

The active silicon microstructures known as Micro-Electromechanical Systems (MEMS) are improving many existing technologies through simplification and cost reduction. Many industries have already capitalized on MEMS technology such as those in fields as diverse as telecommunications, computing, projection displays, automotive safety, defense and biotechnology. As they grow in sophistication and complexity, the familiar pressures to further reduce costs and increase performance grow for those who design and manufacture MEMS devices and the engineers who specify them for their end applications. One example is MEMS optical switches that have evolved from simple, bistable on/off elements to microscopic, freelypositionable beam steering optics. These can be actuated to discrete angular positions or to continuously-variable angular states through applied command signals. Unfortunately, elaborate closed-loop actuation schemes are often necessitated in order to stabilize the actuation. Furthermore, preventing one actuated micro-element from vibrationally cross-coupling with its neighbors is another reason costly closed-loop approaches are thought to be necessary. The Laser Doppler Vibrometer (LDV) is a valuable tool for MEMS characterization that provides non-contact, real-time measurements of velocity and/or displacement response. The LDV is a proven technology for production metrology to determine dynamical behaviors of MEMS elements, which can be a sensitive indicator of manufacturing variables such as film thickness, etch depth, feature tolerances, handling damage and particulate contamination. They are also important for characterizing the actuation dynamics of MEMS elements for implementation of a patented controls technique called Input Shaping«, which we show here can virtually eliminate the vibratory resonant response of MEMS elements even when subjected to the most severe actuation profiles. In this paper, we will demonstrate the use of the LDV to determine how the application of this compact, efficient algorithm can improve the performance of both open- and closed-loop MEMS devices, eliminating the need for costly closed-loop approaches. This can greatly reduce the complexity, cost and yield of MEMS design and manufacture.

Development of Low-Carbon, Copper-Strengthened HSLA Steel Plate for Naval Ship Construction

DTIC Science & Technology

1990-06-01

steel plate microstructures, 2% nital etch . ...................................................... 13 2. Charpy V-notch impact energy transition for...met a minimum yield strength requirement of 80 ksi yield strength through 3/4 inch gage, had high Charpy V-notch impact energy at low tempera- tures...tempered HSLA line-pipe steels, which typically could not meet the minimum Charpy V-notch impact toughness requirement of 35 ft-lb at -1 200 F. In 1984

Measurement of {pi}{sup -}p{yields}{eta}n from threshold to p{sub {pi}}{sub {sup -}}=747 MeV/c

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakhov, S.; Nefkens, B.M.K.; Clajus, M.

2005-07-01

The differential cross section for {eta} production in reaction {pi}{sup -}p{yields}{eta}n has been measured over the full angular range at seven incident {pi}{sup -} beam momenta from threshold to p{sub {pi}}{sub {sup -}}=747 MeV/c using the Crystal Ball multiphoton spectrometer. The angular distributions are S wave dominated. At 10 MeV/c above threshold, a small D-wave contribution appears that interferes with the main S wave. The total {eta} production cross section {sigma}{sup tot} is obtained by integration of d{sigma}/d{omega}. Starting at threshold, {sigma}{sup tot} rises rapidly, as expected for S-wave-dominated production. The features of the {pi}{sup -}p{yields}{eta}n cross section are strikinglymore » similar to those of the SU(3) flavor-related process K{sup -}p{yields}{eta}{lambda}. Comparison of the {pi}{sup -}p{yields}{eta}n reaction is made with {eta} photoproduction.« less

Deep-space navigation with differenced data types. Part 3: An expanded information content and sensitivity analysis

NASA Technical Reports Server (NTRS)

Estefan, J. A.; Thurman, S. W.

1992-01-01

An approximate six-parameter analytic model for Earth-based differential range measurements is presented and is used to derive a representative analytic approximation for differenced Doppler measurements. The analytical models are tasked to investigate the ability of these data types to estimate spacecraft geocentric angular motion, Deep Space Network station oscillator (clock/frequency) offsets, and signal-path calibration errors over a period of a few days, in the presence of systematic station location and transmission media calibration errors. Quantitative results indicate that a few differenced Doppler plus ranging passes yield angular position estimates with a precision on the order of 0.1 to 0.4 micro-rad, and angular rate precision on the order of 10 to 25 x 10(exp -12) rad/sec, assuming no a priori information on the coordinate parameters. Sensitivity analyses suggest that troposphere zenith delay calibration error is the dominant systematic error source in most of the tracking scenarios investigated; as expected, the differenced Doppler data were found to be much more sensitive to troposphere calibration errors than differenced range. By comparison, results computed using wideband and narrowband (delta) VLBI under similar circumstances yielded angular precisions of 0.07 to 0.4 micro-rad, and angular rate precisions of 0.5 to 1.0 x 10(exp -12) rad/sec.

Deep-space navigation with differenced data types. Part 3: An expanded information content and sensitivity analysis

NASA Technical Reports Server (NTRS)

Estefan, J. A.; Thurman, S. W.

1992-01-01

An approximate six-parameter analytic model for Earth-based differenced range measurements is presented and is used to derive a representative analytic approximation for differenced Doppler measurements. The analytical models are tasked to investigate the ability of these data types to estimate spacecraft geocentric angular motion, Deep Space Network station oscillator (clock/frequency) offsets, and signal-path calibration errors over a period of a few days, in the presence of systematic station location and transmission media calibration errors. Quantitative results indicate that a few differenced Doppler plus ranging passes yield angular position estimates with a precision on the order of 0.1 to 0.4 microrad, and angular rate precision on the order of 10 to 25(10)(exp -12) rad/sec, assuming no a priori information on the coordinate parameters. Sensitivity analyses suggest that troposphere zenith delay calibration error is the dominant systematic error source in most of the tracking scenarios investigated; as expected, the differenced Doppler data were found to be much more sensitive to troposphere calibration errors than differenced range. By comparison, results computed using wide band and narrow band (delta)VLBI under similar circumstances yielded angular precisions of 0.07 to 0.4 /microrad, and angular rate precisions of 0.5 to 1.0(10)(exp -12) rad/sec.

Fiber post etching with hydrogen peroxide: effect of concentration and application time.

PubMed

de Sousa Menezes, Murilo; Queiroz, Ellyne Cavalcanti; Soares, Paulo Vinícius; Faria-e-Silva, André Luis; Soares, Carlos José; Martins, Luis Roberto Marcondes

2011-03-01

Etching is necessary to expose the fibers and enable both mechanical and chemical bonding of the resin core to the fiber post. This study evaluated the effect of concentration and application time of hydrogen peroxide on the surface topography and bond strength of glass fiber posts to resin cores. Fiber posts were etched with 24% or 50% hydrogen peroxide for 1, 5, or 10 min (n = 10). Posts without any treatment were used as a control. After etching, the posts were silanated and adhesive resin was applied. The posts were positioned into a mold to allow a self-cured resin core to be inserted. The post/resin assembly was serially sectioned into five beams that were subjected to a tensile bond strength test. Data were subjected to two-way ANOVA and Tukey test (α = 0.05). The surface topography was analyzed using scanning electronic microscopy. Non-etched post presents a relatively smooth surface without fiber exposure. Application of hydrogen peroxide increased the surface roughness and exposed the fibers. All experimental conditions yielded similar bond strength values that were higher than those obtained in the control group. Both 24% and 50% hydrogen peroxide exposure increased the bond strength of resin to the posts, irrespective of the application time. Copyright © 2011 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

Pit-1 gene polymorphism, milk yield, and conformation traits for Italian Holstein-Friesian bulls.

PubMed

Renaville, R; Gengler, N; Vrech, E; Prandi, A; Massart, S; Corradini, C; Bertozzi, C; Mortiaux, F; Burny, A; Portetelle, D

1997-12-01

The growth hormone factor-1/pituitary-specific transcription factor Pit-1 is responsible for the expression of growth hormone in mammals. Mutations in Pit-1 have been found in growth hormone disorders of mice and humans. We studied the eventual association between Pit-1 polymorphism using the HinfI enzyme and the milk yield and conformation traits of 89 Italian Holstein-Friesian bulls. A strategy employing polymerase chain reaction was used to amplify a 451-bp fragment from semen DNA. Digestion of polymerase chain reaction products with HinfI revealed two alleles: allele A was not digested (451-bp fragment), and allele B was cut at one restriction site, generating two fragments of 244 and 207 bp. Three patterns were observed; frequencies were 2.2, 31.5, and 66.3% for AA, AB, and BB, respectively. Fixed and mixed linear models were fitted on daughter yield deviations for milk yields and on deregressed proofs for conformation traits. Predictions were weighted using the inverse of the estimated variance of records. The models used contained mean and gene substitution effects for Pit-1 A allele as fixed effects and random sire effect for the mixed model. The A allele was found to be superior for milk and protein yields, inferior for fat percentage, and superior for body depth, angularity, and rear leg set, which is difficult to explain. A canonical transformation revealed that Pit-1 had three actions, one linked to milk yield traits and angularity, a second linked to body depth and rear leg set, and a third linked to lower fat yields and to higher angularity.

Two-step narrow ridge cascade diode lasers emitting near $$2~\\mu$$ m

DOE PAGES

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; ...

2017-01-02

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.

Holes generation in glass using large spot femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Berg, Yuval; Kotler, Zvi; Shacham-Diamand, Yosi

2018-03-01

We demonstrate high-throughput, symmetrical, holes generation in fused silica glass using a large spot size, femtosecond IR-laser irradiation which modifies the glass properties and yields an enhanced chemical etching rate. The process relies on a balanced interplay between the nonlinear Kerr effect and multiphoton absorption in the glass which translates into symmetrical glass modification and increased etching rate. The use of a large laser spot size makes it possible to process thick glasses at high speeds over a large area. We have demonstrated such fabricated holes with an aspect ratio of 1:10 in a 1 mm thick glass samples.

A novel upwind stabilized discontinuous finite element angular framework for deterministic dose calculations in magnetic fields.

PubMed

Yang, R; Zelyak, O; Fallone, B G; St-Aubin, J

2018-01-30

Angular discretization impacts nearly every aspect of a deterministic solution to the linear Boltzmann transport equation, especially in the presence of magnetic fields, as modeled by a streaming operator in angle. In this work a novel stabilization treatment of the magnetic field term is developed for an angular finite element discretization on the unit sphere, specifically involving piecewise partitioning of path integrals along curved element edges into uninterrupted segments of incoming and outgoing flux, with outgoing components updated iteratively. Correct order-of-accuracy for this angular framework is verified using the method of manufactured solutions for linear, quadratic, and cubic basis functions in angle. Higher order basis functions were found to reduce the error especially in strong magnetic fields and low density media. We combine an angular finite element mesh respecting octant boundaries on the unit sphere to spatial Cartesian voxel elements to guarantee an unambiguous transport sweep ordering in space. Accuracy for a dosimetrically challenging scenario involving bone and air in the presence of a 1.5 T parallel magnetic field is validated against the Monte Carlo package GEANT4. Accuracy and relative computational efficiency were investigated for various angular discretization parameters. 32 angular elements with quadratic basis functions yielded a reasonable compromise, with gamma passing rates of 99.96% (96.22%) for a 2%/2 mm (1%/1 mm) criterion. A rotational transformation of the spatial calculation geometry is performed to orient an arbitrary magnetic field vector to be along the z-axis, a requirement for a constant azimuthal angular sweep ordering. Working on the unit sphere, we apply the same rotational transformation to the angular domain to align its octants with the rotated Cartesian mesh. Simulating an oblique 1.5 T magnetic field against GEANT4 yielded gamma passing rates of 99.42% (95.45%) for a 2%/2 mm (1%/1 mm) criterion.

A novel upwind stabilized discontinuous finite element angular framework for deterministic dose calculations in magnetic fields

NASA Astrophysics Data System (ADS)

Yang, R.; Zelyak, O.; Fallone, B. G.; St-Aubin, J.

2018-02-01

Angular discretization impacts nearly every aspect of a deterministic solution to the linear Boltzmann transport equation, especially in the presence of magnetic fields, as modeled by a streaming operator in angle. In this work a novel stabilization treatment of the magnetic field term is developed for an angular finite element discretization on the unit sphere, specifically involving piecewise partitioning of path integrals along curved element edges into uninterrupted segments of incoming and outgoing flux, with outgoing components updated iteratively. Correct order-of-accuracy for this angular framework is verified using the method of manufactured solutions for linear, quadratic, and cubic basis functions in angle. Higher order basis functions were found to reduce the error especially in strong magnetic fields and low density media. We combine an angular finite element mesh respecting octant boundaries on the unit sphere to spatial Cartesian voxel elements to guarantee an unambiguous transport sweep ordering in space. Accuracy for a dosimetrically challenging scenario involving bone and air in the presence of a 1.5 T parallel magnetic field is validated against the Monte Carlo package GEANT4. Accuracy and relative computational efficiency were investigated for various angular discretization parameters. 32 angular elements with quadratic basis functions yielded a reasonable compromise, with gamma passing rates of 99.96% (96.22%) for a 2%/2 mm (1%/1 mm) criterion. A rotational transformation of the spatial calculation geometry is performed to orient an arbitrary magnetic field vector to be along the z-axis, a requirement for a constant azimuthal angular sweep ordering. Working on the unit sphere, we apply the same rotational transformation to the angular domain to align its octants with the rotated Cartesian mesh. Simulating an oblique 1.5 T magnetic field against GEANT4 yielded gamma passing rates of 99.42% (95.45%) for a 2%/2 mm (1%/1 mm) criterion.

Total angular momenta of high-lying odd levels of U I at ∼ 4 eV using resonance ionization laser polarization spectroscopy

NASA Astrophysics Data System (ADS)

Rath, Asawari D.; Kundu, S.; Ray, A. K.

2018-02-01

Laser induced photoionization of atoms shows significant dependence on the choice of polarizations of lasers. In multi-step, multi-photon excitation and subsequent ionization of atoms different polarization combinations of the exciting lasers lead to distinctly different ion yields. This fact is exploited in this work to determine total angular momenta of odd-parity energy levels of U I lying at ∼ 4 eV from its ground level using resonance ionization laser polarization spectroscopy in time of flight mass spectrometer. These levels are populated by two-step resonant excitation using two pulsed dye lasers with preset polarizations of choice followed by nonresonant ionization by third laser. The dependence of ionization yield on specific polarizations of the first two lasers is studied experimentally for each level under consideration. This dependence when compared to simulations makes possible unambiguous assignment of J angular momenta to these levels.

Atomistic simulations of graphite etching at realistic time scales.

PubMed

Aussems, D U B; Bal, K M; Morgan, T W; van de Sanden, M C M; Neyts, E C

2017-10-01

Hydrogen-graphite interactions are relevant to a wide variety of applications, ranging from astrophysics to fusion devices and nano-electronics. In order to shed light on these interactions, atomistic simulation using Molecular Dynamics (MD) has been shown to be an invaluable tool. It suffers, however, from severe time-scale limitations. In this work we apply the recently developed Collective Variable-Driven Hyperdynamics (CVHD) method to hydrogen etching of graphite for varying inter-impact times up to a realistic value of 1 ms, which corresponds to a flux of ∼10 20 m -2 s -1 . The results show that the erosion yield, hydrogen surface coverage and species distribution are significantly affected by the time between impacts. This can be explained by the higher probability of C-C bond breaking due to the prolonged exposure to thermal stress and the subsequent transition from ion- to thermal-induced etching. This latter regime of thermal-induced etching - chemical erosion - is here accessed for the first time using atomistic simulations. In conclusion, this study demonstrates that accounting for long time-scales significantly affects ion bombardment simulations and should not be neglected in a wide range of conditions, in contrast to what is typically assumed.

Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching.

PubMed

Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan

2016-06-24

Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm(-2) due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.

Fabrication of sub-diffraction-limit molecular structures by scanning near-field photolithography

NASA Astrophysics Data System (ADS)

Ducker, Robert E.; Montague, Matthew T.; Sun, Shuqing; Leggett, Graham J.

2007-09-01

Using a scanning near-field optical microscope coupled to a UV laser, an approach we term scanning near-field photolithography (SNP), structures as small as 9 nm (ca. λ/30) may be fabricated in self-assembled monolayers of alkanethiols on gold surfaces. Selective exposure of the adsorbate molecules in the near field leads to photoconversion of the alkylthiolate to a weakly bound alkylsulfonate which may be displaced readily be a contrasting thiol, leading to a chemical pattern, or used as a resist for the selective etching of the underlying metal. A novel ultra-mild etch for gold is reported, and used to etch structures as small as 9 nm. Photopatterning of oligo(ethylene glycol) (OEG) terminated selfassembled monolayers facilitates the fabrication of biomolecular nanostructures. Selective removal of the protein-resistant OEG terminated adsorbates created regions that may be functionalized with a second thiol and derivatized with a biomolecule. Finally, the application of SNP to nanopatterning on oxide surfaces is demonstrated. Selective exposure of monolayers of phosphonic acids adsorbed onto aluminum oxide leads to cleavage of the P-C bond and desorption of the adsorbate molecule. Subsequent etching, using aqueous based, yields structures as small as 100 nm.

Defect detection and control in an analog CMOS process

NASA Astrophysics Data System (ADS)

Taucher, Franz; Evans, Ivor R.

1996-09-01

Over the last 12 months, Austria Mikro Systeme has installed an even more rigorous system of defect density measurement, monitoring and control in its facility at Unterpremstatten. To accomplish this, 2 test devices (Medusa 1 and 2) were designed which allow possible defects in all layers of the process to be located. These devices are 8 by 9 mm2 in area and contain various structures to quantify the density of defects causing continuity, bridging and inter-layer isolation failure. The devices move through the waferfab receiving all process steps with the usual handling and operator procedures, from which it is clear, that the density of defects measured is representative of that of normal production material. The wafers are tested electrically using a Keithley S450, and data analysis is done with RS1 and EXCEL. By using yield models available from the literature, the correspondence in yield estimates made in this way and actual production yields were generally within 3%. Applying this technique allows the yield loss mechanisms to be isolated and then prioritized. The chipset identified several areas within the process which required special attention. These included implant optimization to reduce gate oxide damage, defect reduction in the metal-etch process, increased leakage currents caused by implant channeling and second poly etch-control to avoid 'bridging' around poly 1 periphery. Successful actions at these points have led to a significant improvement in wafer probe yields at Austria Mikro Systeme.

Innovations in Rheometer Controlled-Rate Control Loop Design: Ultra Low Angular Speed Control and New Applications

NASA Astrophysics Data System (ADS)

Schulz, Ulrich; Sierro, Philippe; Nijman, Jint

2008-07-01

The design and implementation of an angular speed control loop for a universal rheometer is not a trivial task. The combination of a highly dynamic, very low inertia (drag cup) motor (motor inertia is 10-5 kg m2) with samples which can range in viscosity from 10-3 Pas to 108 Pas, which can be between purely viscous and higly viscoelastic, which can exhibit yield-stresses, etc. asks for a highly adaptive digital control loop. For the HAAKE MARS rotational rheometer a new adaptive control loop was developed which allows the control of angular speeds as low 5×10-9 rad/s and response times a short as 10 ms. The adaptation of the control loop to "difficult" samples is performed by analysing the response of the complete system to a short pre-test. In this paper we will show that the (very) short response times at (very) low angular speeds are not only achieved with ideal samples, but due to the adaptable control loop, also with "difficult" samples. We will show measurement results on "difficult" samples like cosmetic creams and emulsions, a laponite gel, etc. to proof that angular speeds down to 10-4 rad/s are reached within 10 ms to 20 ms and angular speeds down to 10-7 rad/s within 1 s to 2 s. The response times for reaching ultra low angular speeds down to 5×10-9 rad/s are in the order of 10 s to 30 s. With this new control loop it is, for the first time, possible to measure yield stresses by applying a very low constant shear-rate to the sample and measuring the torque response as a function of time.

Time-resolved orbital angular momentum spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noyan, Mehmet A.; Kikkawa, James M.

We introduce pump-probe magneto-orbital spectroscopy, wherein Laguerre-Gauss optical pump pulses impart orbital angular momentum to the electronic states of a material and subsequent dynamics are studied with 100 fs time resolution. The excitation uses vortex modes that distribute angular momentum over a macroscopic area determined by the spot size, and the optical probe studies the chiral imbalance of vortex modes reflected off the sample. First observations in bulk GaAs yield transients that evolve on time scales distinctly different from population and spin relaxation, as expected, but with surprisingly large lifetimes.

Measurements and Modelling of Sputtering Rates with Low Energy Ions

NASA Astrophysics Data System (ADS)

Ruzic, David N.; Smith, Preston C.; Turkot, Robert B., Jr.

1996-10-01

The angular-resolved sputtering yield of Be by D+, and Al by Ar+ was predicted and then measured. A 50 to 1000 eV ion beam from a Colutron was focused on to commercial grade and magnetron target grade samples. The S-65 C grade beryllium samples were supplied by Brush Wellman and the Al samples from TOSOH SMD. In our vacuum chamber the samples can be exposed to a dc D or Ar plasma to remove oxide, load the surface and more-nearly simulate steady state operating conditions in the plasma device. The angular distribution of the sputtered atoms was measured by collection on a single crystal graphite witness plate. The areal density of Be or Al (and BeO2 or Al2O3, after exposure to air) was then measured using a Scanning Auger Spectrometer. Total yield was also measured by deposition onto a quartz crystal oscillator simultaneously to deposition onto the witness plate. A three dimensional version of vectorized fractal TRIM (VFTRIM3D), a Monte-Carlo computer code which includes surface roughness characterized by fractal geometry, was used to predict the angular distribution of the sputtered particles and a global sputtering coefficient. Over a million trajectories were simulated for each incident angle to determine the azimuthal and polar angle distributions of the sputtered atoms. The experimental results match closely with the simulations for total yield, while the measured angular distributions depart somewhat from the predicted cosine curve.

Molybdenum and carbon atom and carbon cluster sputtering under low-energy noble gas plasma bombardment

NASA Astrophysics Data System (ADS)

Oyarzabal, Eider

Exit-angle resolved Mo atom sputtering yield under Xe ion bombardment and carbon atom and cluster (C2 and C3) sputtering yields under Xe, Kr, Ar, Ne and He ion bombardment from a plasma are measured for low incident energies (75--225 eV). An energy-resolved quadrupole mass spectrometer (QMS) is used to detect the fraction of un-scattered sputtered neutrals that become ionized in the plasma; the angular distribution is obtained by changing the angle between the target and the QMS aperture. A one-dimensional Monte Carlo code is used to simulate the interaction of the plasma and the sputtered particles between the sample and the QMS. The elastic scattering cross-sections of C, C2 and C3 with the different bombarding gas neutrals is obtained by varying the distance between the sample and the QMS and by performing a best fit of the simulation results to the experimental results. Because the results obtained with the QMS are relative, the Mo atom sputtering results are normalized to the existing data in the literature and the total sputtering yield for carbon (C+C 2+C3) for each bombarding gas is obtained from weight loss measurements. The absolute sputtering yield for C, C2 and C 3 is then calculated from the integration of the measured angular distribution, taking into account the scattering and ionization of the sputtered particles between the sample and the QMS. The angular sputtering distribution for Mo has a maximum at theta=60°, and this maximum becomes less pronounced as the incident ion energy increases. The results of the Monte Carlo TRIDYN code simulation for the angular distribution of Mo atoms sputtered by Xe bombardment are in agreement with the experiments. For carbon sputtering under-cosine angular distributions of the sputtered atoms and clusters for all the studied bombarding gases are also observed. The C, C2 and C3 sputtering yield data shows a clear decrease of the atom to cluster (C/C2 and C/C3) sputtering ratio as the incident ion mass increases, changing from a carbon atom preferential erosion for the lower incident ion masses (He, Ne and Ar) to a cluster preferential erosion for the higher incident ion masses (Kr and Xe).

Room-Temperature Wet Chemical Synthesis of Au NPs/TiH2/Nanocarved Ti Self-Supported Electrocatalysts for Highly Efficient H2 Generation.

PubMed

Amin, Mohammed A; Fadlallah, Sahar A; Alosaimi, Ghaida S; Ahmed, Emad M; Mostafa, Nasser Y; Roussel, Pascal; Szunerits, Sabine; Boukherroub, Rabah

2017-09-06

Self-supported electrocatalysts are a new class of materials exhibiting high catalytic performance for various electrochemical processes and can be directly equipped in energy conversion devices. We present here, for the first time, sparse Au NPs self-supported on etched Ti (nanocarved Ti substrate self-supported with TiH 2 ) as promising catalysts for the electrochemical generation of hydrogen (H 2 ) in KOH solutions. Cleaned, as-polished Ti substrates were etched in highly concentrated sulfuric acid solutions without and with 0.1 M NH 4 F at room temperature for 15 min. These two etching processes yielded a thin layer of TiH 2 (the corrosion product of the etching process) self-supported on nanocarved Ti substrates with different morphologies. While F - -free etching process led to formation of parallel channels (average width: 200 nm), where each channel consists of an array of rounded cavities (average width: 150 nm), etching in the presence of F - yielded Ti surface carved with nanogrooves (average width: 100 nm) in parallel orientation. Au NPs were then grown in situ (self-supported) on such etched surfaces via immersion in a standard gold solution at room temperature without using stabilizers or reducing agents, producing Au NPs/TiH 2 /nanostructured Ti catalysts. These materials were characterized by scanning electron microscopy/energy-dispersive spectroscopy (SEM/EDS), grazing incidence X-ray diffraction (GIXRD), and X-ray photoelectron spectroscopy (XPS). GIXRD confirmed the formation of Au 2 Ti phase, thus referring to strong chemical interaction between the supported Au NPs and the substrate surface (also evidenced from XPS) as well as a titanium hydride phase of chemical composition TiH 2 . Electrochemical measurements in 0.1 M KOH solution revealed outstanding hydrogen evolution reaction (HER) electrocatalytic activity for our synthesized catalysts, with Au NPs/TiH 2 /nanogrooved Ti catalyst being the best one among them. It exhibited fast kinetics for the HER with onset potentials as low as -22 mV vs. RHE, high exchange current density of 0.7 mA cm -2 , and a Tafel slope of 113 mV dec -1 . These HER electrochemical kinetic parameters are very close to those measured here for a commercial Pt/C catalyst (onset potential: -20 mV, Tafel slope: 110 mV dec -1 , and exchange current density: 0.75 mA cm -2 ). The high catalytic activity of these materials was attributed to the catalytic impacts of both TiH 2 phase and self-supported Au NPs (active sites for the catalytic reduction of water to H 2 ), in addition to their nanostructured features which provide a large-surface area for the HER.

The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS

NASA Astrophysics Data System (ADS)

Tengeler, Sven; Kaiser, Bernhard; Ferro, Gabriel; Chaussende, Didier; Jaegermann, Wolfram

2018-01-01

The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si-OH/C-H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.

Shear bond strength of orthodontic brackets bonded with different self-etching adhesives.

PubMed

Scougall Vilchis, Rogelio José; Yamamoto, Seigo; Kitai, Noriyuki; Yamamoto, Kohji

2009-09-01

The purpose of this study was to compare the shear bond strength (SBS) of orthodontic brackets bonded with 4 self-etching adhesives. A total of 175 extracted premolars were randomly divided into 5 groups (n = 35). Group I was the control, in which the enamel was etched with 37% phosphoric acid, and stainless steel brackets were bonded with Transbond XT (3M Unitek, Monrovia, Calif). In the remaining 4 groups, the enamel was conditioned with the following self-etching primers and adhesives: group II, Transbond Plus and Transbond XT (3M Unitek); group III, Clearfil Mega Bond FA and Kurasper F (Kuraray Medical, Tokyo, Japan); group IV, Primers A and B, and BeautyOrtho Bond (Shofu, Kyoto, Japan); and group V, AdheSE and Heliosit Orthodontic (Ivoclar Vivadent AG, Liechtenstein). The teeth were stored in distilled water at 37 degrees C for 24 hours and debonded with a universal testing machine. The adhesive remnant index (ARI) including enamel fracture score was also evaluated. Additionally, the conditioned enamel surfaces were observed under a scanning electron microscope. The SBS values of groups I (19.0 +/- 6.7 MPa) and II (16.6 +/- 7.3 MPa) were significantly higher than those of groups III (11.0 +/- 3.9 MPa), IV (10.1 +/- 3.7 MPa), and V (11.8 +/- 3.5 MPa). Fluoride-releasing adhesives (Kurasper F and BeautyOrtho Bond) showed clinically acceptable SBS values. Significant differences were found in the ARI and enamel fracture scores between groups I and II. The 4 self-etching adhesives yielded SBS values higher than the bond strength (5.9 to 7.8 MPa) suggested for routine clinical treatment, indicating that orthodontic brackets can be successfully bonded with any of these self-etching adhesives.

Effect of the Yield Stress and r-value Distribution on the Earing Profile of Cup Drawing with Yld2000-2d Yield Function

NASA Astrophysics Data System (ADS)

Lou, Yanshan; Bae, Gihyun; Lee, Changsoo; Huh, Hoon

2010-06-01

This paper deals with the effect of the yield stress and r-value distribution on the earing in the cup drawing. The anisotropic yield function, Yld2000-2d yield function, is selected to describe the anisotropy of two metal sheets, 719B and AA5182-O. The tool dimension is referred from the Benchmark problem of NUMISHEET'2002. The Downhill Simplex method is applied to identify the anisotropic coefficients in Yld2000-2d yield function. Simulations of the drawing process are performed to investigate the earing profile of two materials. The earing profiles obtained from simulations are compared with the analytical model developed by Hosford and Caddell. Simulations are conducted with respect to the change of the yield stress and r-value distribution, respectively. The correlation between the anisotropy and the earing tendency is investigated based on simulation data. Finally, the earing mechanism is analyzed through the deformation process of the blank during the cup deep drawing. It can be concluded that ears locate at angular positions with lower yield stress and higher r-value while the valleys appear at the angular position with higher yield stress and lower r-value. The effect of the yield stress distribution is more important for the cup height distribution than that of the r-value distribution.

Bond strength of different adhesives to normal and caries-affected dentins.

PubMed

Xuan, Wei; Hou, Ben-xiang; Lü, Ya-lin

2010-02-05

Currently, several systems of dentin substrate-reacting adhesives are available for use in the restorative treatment against caries. However, the bond effectiveness and property of different adhesive systems to caries-affected dentin are not fully understood. The objective of this study was to evaluate the bond strength of different adhesives to both normal dentin (ND) and caries-affected dentin (CAD) and to analyze the dentin/adhesive interfacial characteristics. Twenty eight extracted human molars with coronal medium carious lesions were randomly assigned to four groups according to adhesives used. ND and CAD were bonded with etch-and-rinse adhesive Adper Single Bond 2 (SB2) or self-etching adhesives Clearfil SE Bond (CSE), Clearfil S(3) Bond (CS3), iBond GI (IB). Rectangular sticks of resin-dentin bonded interfaces 0.9 mm(2) were obtained. The specimens were subjected to microtensile bond strength (microTBS) testing at a crosshead speed of 1 mm/min. Mean microTBS was statistically analyzed with analysis of variance (ANOVA) and Student-Newman-Keuls tests. Interfacial morphologies were analyzed by Scanning Electron Microscopy (SEM). Etch-and-rinse adhesive Adper(TM) Single Bond 2 yielded high bond strength when applied to both normal and caries-affected dentin. The two-step self-etching adhesive Clearfil SE Bond generated the highest bond strength to ND among all adhesives tested but a significantly reduced strength when applied to CAD. For the one-step self-etching adhesives, Clearfil S(3) Bond and iBond GI, the bond strength was relatively low regardless of the dentin type. SEM interfacial analysis revealed that hybrid layers were thicker with poorer resin tag formation and less resin-filled lateral branches in the CAD than in the ND for all the adhesives tested. The etch-and-rinse adhesive performed more effectively to caries-affected dentin than the self-etching adhesives.

Automated margin analysis of contemporary adhesive systems in vitro: evaluation of discriminatory variables.

PubMed

Heintze, Siegward D; Forjanic, Monika; Roulet, François-Jean

2007-08-01

Using an optical sensor, to automatically evaluate the marginal seal of restorations placed with 21 adhesive systems of all four adhesive categories in cylindrical cavities of bovine dentin applying different outcome variables, and to evaluate their discriminatory power. Twenty-one adhesive systems were evaluated: three 3-step etch-and-rinse systems, three 2-step etch-and-rinse systems, five 2-step self-etching systems, and ten 1-step self-etching systems. All adhesives were applied in cylindrical cavities in bovine dentin together with Tetric Ceram (n=8). In the control group, no adhesive system was used. After 24 h of storage in water at 37 degrees C, the surface was polished with 4000-grit SiC paper, and epoxy resin replicas were produced. An optical sensor (FRT MicroProf) created 100 profiles of the restoration margin, and an algorithm detected gaps and calculated their depths and widths. The following evaluation criteria were used: percentage of specimens without gaps, the percentage of gap-free profiles in relation to all profiles per specimen, mean gap width, mean gap depth, largest gap, modified marginal integrity index MI. The statistical analysis was carried out on log-transformed data for all variables with ANOVA and post-hoc Tukey's test for multiple comparisons. The correlation between the variables was tested with regression analysis, and the pooled data accordingto the four adhesive categories were compared by applying the Mann-Whitney nonparametric test (p < 0.05). For all the variables that characterized the marginal adaptation, there was a great variation from material to material. In general, the etch-and-rinse adhesive systems demonstrated the best marginal adaptation, followed by the 2-step self-etching and the 1-step self-etching adhesives; the latter showed the highest variability in test results between materials and within the same material. The only exception to this rule was Xeno IV, which showed a marginal adaptation that was comparable to that of the best 3-step etch-and-rinse systems. Except for the variables "largest gap" and "mean gap depth", all the other variables had a similar ability to discriminate between materials. Pooled data according to the four adhesive categories revealed statistically significant differences between the one-step self-etching systems and the other three systems as well as between two-step self-etching and three-step etch-and-rinse systems. With one exception, the one-step self-etching systems yielded the poorest marginal adaptation results and the highest variability between materials and within the same material. Except for the variable "largest gap", the percentage of continuous margin, mean gap width, mean gap depth, and the marginal integrity index MI were closely related to one another and showed--with the exception of "mean gap depth"--similar discriminatory power.

Robust graphene membranes in a silicon carbide frame.

PubMed

Waldmann, Daniel; Butz, Benjamin; Bauer, Sebastian; Englert, Jan M; Jobst, Johannes; Ullmann, Konrad; Fromm, Felix; Ammon, Maximilian; Enzelberger, Michael; Hirsch, Andreas; Maier, Sabine; Schmuki, Patrik; Seyller, Thomas; Spiecker, Erdmann; Weber, Heiko B

2013-05-28

We present a fabrication process for freely suspended membranes consisting of bi- and trilayer graphene grown on silicon carbide. The procedure, involving photoelectrochemical etching, enables the simultaneous fabrication of hundreds of arbitrarily shaped membranes with an area up to 500 μm(2) and a yield of around 90%. Micro-Raman and atomic force microscopy measurements confirm that the graphene layer withstands the electrochemical etching and show that the membranes are virtually unstrained. The process delivers membranes with a cleanliness suited for high-resolution transmission electron microscopy (HRTEM) at atomic scale. The membrane, and its frame, is very robust with respect to thermal cycling above 1000 °C as well as harsh acidic or alkaline treatment.

Measurement of ion beam angular distribution at different helium gas pressures in a plasma focus device by large-area polycarbonate detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sohrabi, M.; Habibi, M., E-mail: mortezahabibi@gmail.com; Ramezani, V.

2017-02-15

The paper presents an experimental study and analysis of full helium ion density angular distributions in a 4-kJ plasma focus device (PFD) at pressures of 10, 15, 25, and 30 mbar using large-area polycarbonate track detectors (PCTDs) (15-cm etchable diameter) processed by 50-Hz-HV electrochemical etching (ECE). Helium ion track distributions at different pressures, in particular, at the main axis of the PFD are presented. Maximum ion track density of ~4.4 × 10{sup 4} tracks/cm{sup 2} was obtained in the PCTD placed 6 cm from the anode. The ion distributions for all pressures applied are ring-shaped, which is possibly due tomore » the hollow cylindrical copper anode used. The large-area PCTD processed by ECE proves, at the present state-of-theart, a superior method for direct observation and analysis of ion distributions at a glance with minimum efforts and time. Some observations of the ion density distributions at different pressures are reported and discussed.« less

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

The processing of enriched germanium for the Majorana   Demonstrator  and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

The processing of enriched germanium for the MAJORANA DEMONSTRATOR and R&D for a next generation double-beta decay experiment

NASA Astrophysics Data System (ADS)

Abgrall, N.; Arnquist, I. J.; Avignone, F. T., III; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caja, J.; Caja, M.; Caldwell, T. S.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Dunstan, D. T.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Haufe, C. R. S.; Henning, R.; Hoppe, E. W.; Jasinski, B. R.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; Lopez, A. M.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Meyer, J. H.; Myslik, J.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Reine, A. L.; Reising, J. A.; Rielage, K.; Robertson, R. G. H.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Toth, L. M.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.

2018-01-01

The MAJORANA DEMONSTRATOR is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76 Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76 Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluids from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

Blending Velocities In Task Space In Computing Robot Motions

NASA Technical Reports Server (NTRS)

Volpe, Richard A.

1995-01-01

Blending of linear and angular velocities between sequential specified points in task space constitutes theoretical basis of improved method of computing trajectories followed by robotic manipulators. In method, generalized velocity-vector-blending technique provides relatively simple, common conceptual framework for blending linear, angular, and other parametric velocities. Velocity vectors originate from straight-line segments connecting specified task-space points, called "via frames" and represent specified robot poses. Linear-velocity-blending functions chosen from among first-order, third-order-polynomial, and cycloidal options. Angular velocities blended by use of first-order approximation of previous orientation-matrix-blending formulation. Angular-velocity approximation yields small residual error, quantified and corrected. Method offers both relative simplicity and speed needed for generation of robot-manipulator trajectories in real time.

Mass and angular distributions of the reaction products in heavy ion collisions

NASA Astrophysics Data System (ADS)

Nasirov, A. K.; Giardina, G.; Mandaglio, G.; Kayumov, B. M.; Tashkhodjaev, R. B.

2018-05-01

The optimal reactions and beam energies leading to synthesize superheavy elements is searched by studying mass and angular distributions of fission-like products in heavy-ion collisions since the evaporation residue cross section consists an ignorable small part of the fusion cross section. The intensity of the yield of fission-like products allows us to estimate the probability of the complete fusion of the interacting nuclei. The overlap of the mass and angular distributions of the fusion-fission and quasifission products causes difficulty at estimation of the correct value of the probability of the compound nucleus formation. A study of the mass and angular distributions of the reaction products is suitable key to understand the interaction mechanism of heavy ion collisions.

Optimized 2D array of thin silicon pillars for efficient antireflective coatings in the visible spectrum

PubMed Central

Proust, Julien; Fehrembach, Anne-Laure; Bedu, Frédéric; Ozerov, Igor; Bonod, Nicolas

2016-01-01

Light reflection occuring at the surface of silicon wafers is drastically diminished by etching square pillars of height 110 nm and width 140 nm separated by a 100 nm gap distance in a square lattice. The design of the nanostructure is optimized to widen the spectral tolerance of the antireflective coatings over the visible spectrum for both fundamental polarizations. Angle and polarized resolved optical measurements report a light reflection remaining under 5% when averaged in the visible spectrum for both polarizations in a wide angular range. Light reflection remains almost insensitive to the light polarization even in oblique incidence. PMID:27109643

Reactive Collisions in Crossed Molecular Beams

DOE R&D Accomplishments Database

Herschbach, D. R.

1962-02-01

The distribution of velocity vectors of reaction products is discussed with emphasis on the restrictions imposed by the conservation laws. The recoil velocity that carries the products away from the center of mass shows how the energy of reaction is divided between internal excitation and translation. Similarly, the angular distributions, as viewed from the center of mass, reflect the partitioning of the total angular momentum between angular momenta of individual molecules and orbital angular momentum associated with their relative motion. Crossed-beam studies of several reactions of the type M + RI yields R + MI are described, where M = K, Rb, Cs, and R = CH{sub 3}, C{sub 3}H{sub 5}, etc. The results show that most of the energy of reaction goes into internal excitation of the products and that the angular distribution is quite anisotropic, with most of the MI recoiling backward (and R forward) with respect to the incoming K beam. (auth)

A novel approach to piecewise analytic agricultural machinery path reconstruction

NASA Astrophysics Data System (ADS)

Wörz, Sascha; Mederle, Michael; Heizinger, Valentin; Bernhardt, Heinz

2017-12-01

Before analysing machinery operation in fields, it has to be coped with the problem that the GPS signals of GPS receivers located on the machines contain measurement noise, are time-discrete, and the underlying physical system describing the positions, axial and absolute velocities, angular rates and angular orientation of the operating machines during the whole working time are unknown. This research work presents a new three-dimensional mathematical approach using kinematic relations based on control variables as Euler angular velocities and angles and a discrete target control problem, such that the state control function is given by the sum of squared residuals involving the state and control variables to get such a physical system, which yields a noise-free and piecewise analytic representation of the positions, velocities, angular rates and angular orientation. It can be used for a further detailed study and analysis of the problem of why agricultural vehicles operate in practice as they do.

Optimization of fiber grating couplers on SOI using advanced search algorithms.

PubMed

Wohlfeil, Benjamin; Zimmermann, Lars; Petermann, Klaus

2014-06-01

A one-dimensional fiber grating coupler is derived from a waveguide with random etches using implementations of particle swarm and genetic algorithms. The resulting gratings yield a theoretical coupling efficiency of up to 1.1 dB and prompt clear design rules for the layout of highly efficient fiber grating couplers.

Single photon emission from plasma treated 2D hexagonal boron nitride.

PubMed

Xu, Zai-Quan; Elbadawi, Christopher; Tran, Toan Trong; Kianinia, Mehran; Li, Xiuling; Liu, Daobin; Hoffman, Timothy B; Nguyen, Minh; Kim, Sejeong; Edgar, James H; Wu, Xiaojun; Song, Li; Ali, Sajid; Ford, Mike; Toth, Milos; Aharonovich, Igor

2018-05-03

Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Amongst numerous candidates, 2D hexagonal boron nitride has recently emerged as a promising platform hosting single photon emitters. Here, we report a number of robust plasma and thermal annealing methods for fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprising Ar plasma etching and subsequent annealing in Ar is highly robust, and yields an eight-fold increase in the concentration of emitters in hBN. The initial plasma-etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature with emission wavelengths greater than ∼700 nm. Density functional theory modeling suggests that the emitters might be associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters via annealing hBN in air. Our findings advance the present understanding of the structure of quantum emitters in hBN and enhance the nanofabrication toolkit needed to realize integrated quantum nanophotonic circuits.

X-ray photoelectron spectroscopy study of chemically-etched Nd-Ce-Cu-O surfaces

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Gupta, A.; Kussmaul, A.

1991-01-01

Acetic acid, Br2, and HCl solutions are investigated for removing insulating species from Nd(1.85)Ce(0.15)CuO(4-delta) (NCCO) thin film surfaces. X-ray photoelectron spectroscopy (XPS) shows that the HCl etch is most effective, yielding O 1s spectra comparable to those obtained from samples cleaned in vacuum and a clear Fermi edge in the valence band region. Reduction and oxidation reversibly induces and eliminates, respectively, Fermi level states for undoped samples, but has no clearly observable effect on the XPS spectra for doped samples. Reactivity to air is much less for NCCO compared to hole superconductors, which is attributed to the lack of reactive alkaline earth elements in NCCO.

TiO2 film properties as a function of processing temperature, volume 3

NASA Technical Reports Server (NTRS)

Fitzgibbons, E. T.; Sladek, K. J.; Hartwig, W. H.

1972-01-01

Thin film TiO2 was produced at 150 C by chemical vapor deposition using hydrolysis of tetraisopropyl titanate. Films were amorphous as grown, but annealing in air caused crystallization, with anatase formed beginning at 350 C and rutile at 700 C. Density and index of refraction increased substantially with increasing anneal temperature, while etch susceptibility in HF and H2SO4 decreased. Comparison with literature data showed two groups of processes. One group yields films having properties that gradually approach those of rutile with increasing process temperature. The other group gives rutile directly at moderate temperatures. Deposition of amorphous film followed by etching and annealing is suggested as a means for pattern definition.

Bonding durability of dual-curing composite core material with different self-etching adhesive systems in a model complete vertical root fracture reconstruction.

PubMed

Waidyasekera, Kanchana; Nikaido, Toru; Weerasinghe, Dinesh; Nurrohman, Hamid; Tagami, Junji

2012-04-01

This study evaluated a dual-curing composite along with different dentin adhesive systems for 1 year under water storage, as a new bonding method of root fragments in complete vertical root fracture. Bovine root fragments were bonded with the dual-curing resin composite Clearfil DC Core Automix (DCA) and one of three adhesive systems: two-step self-etching adhesive Clearfil SE Bond (SE), one-step self-etching adhesive Tokuyama Bond Force (BF), one-step dual-curing self-etching adhesive Clearfil DC Bond (DC). Microtensile bond strength (µTBS)/ultimate tensile bond strength (UTS), FE-SEM ultramorphology of fracture modes, and adhesive dentin interface were observed after water storage for periods of up to one year. The data were analyzed with two-way ANOVA. µTBS was influenced by "dentin adhesive system" (F = 324.455, p < 0.001) and "length of water storage" (F = 8.470, p < 0.001). SE yielded significantly higher µTBS, regardless of storage period (p < 0.05) and maintained the initial µTBS without a significant change after 1 year of water storage (p > 0.05). From 24 h to 1 month, BF showed significantly higher bond strength than DC. UTS of DCA was influenced only by the curing mode of the material (F = 5.051, p = 0.027), but not by the length of water storage (F = 0.053, p > 0.05). Two-step self-etching adhesive systems and dual-curing composite core material can be considered as a suitable bonding method for complete root fractures.

Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices

NASA Astrophysics Data System (ADS)

Wasisto, Hutomo Suryo; Yu, Feng; Doering, Lutz; Völlmeke, Stefan; Brand, Uwe; Bakin, Andrey; Waag, Andreas; Peiner, Erwin

2015-05-01

Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al2O3) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al2O3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al2O3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al2O3 wet etching and in ICP cryogenic dry etching. By using SF6/O2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60-100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

Fabrication of vertical nanowire resonators for aerosol exposure assessment

NASA Astrophysics Data System (ADS)

Merzsch, Stephan; Wasisto, Hutomo Suryo; Stranz, Andrej; Hinze, Peter; Weimann, Thomas; Peiner, Erwin; Waag, Andreas

2013-05-01

Vertical silicon nanowire (SiNW) resonators are designed and fabricated in order to assess exposure to aerosol nanoparticles (NPs). To realize SiNW arrays, nanolithography and inductively coupled plasma (ICP) deep reactive ion etching (DRIE) at cryogenic temperature are utilized in a top-down fabrication of SiNW arrays which have high aspect ratios (i.e., up to 34). For nanolithography process, a resist film thickness of 350 nm is applied in a vacuum contact mode to serve as a mask. A pattern including various diameters and distances for creating pillars is used (i.e., 400 nm up to 5 μm). In dry etching process, the etch rate is set high of 1.5 μm/min to avoid underetching. The etch profiles of Si wires can be controlled aiming to have either perpendicularly, negatively or positively profiled sidewalls by adjusting the etching parameters (e.g., temperature and oxygen content). Moreover, to further miniaturize the wire, multiple sacrificial thermal oxidations and subsequent oxide stripping are used yielding SiNW arrays of 650 nm in diameter and 40 μm in length. In the resonant frequency test, a piezoelectric shear actuator is integrated with the SiNWs inside a scanning electron microscope (SEM) chamber. The observation of the SiNW deflections are performed and viewed from the topside of the SiNWs to reduce the measurement redundancy. Having a high deflection of ~10 μm during its resonant frequency of 452 kHz and a low mass of 31 pg, the proposed SiNW is potential for assisting the development of a portable aerosol resonant sensor.

Photolithography-free laser-patterned HF acid-resistant chromium-polyimide mask for rapid fabrication of microfluidic systems in glass

NASA Astrophysics Data System (ADS)

Zamuruyev, Konstantin O.; Zrodnikov, Yuriy; Davis, Cristina E.

2017-01-01

Excellent chemical and physical properties of glass, over a range of operating conditions, make it a preferred material for chemical detection systems in analytical chemistry, biology, and the environmental sciences. However, it is often compromised with SU8, PDMS, or Parylene materials due to the sophisticated mask preparation requirements for wet etching of glass. Here, we report our efforts toward developing a photolithography-free laser-patterned hydrofluoric acid-resistant chromium-polyimide tape mask for rapid prototyping of microfluidic systems in glass. The patterns are defined in masking layer with a diode-pumped solid-state laser. Minimum feature size is limited to the diameter of the laser beam, 30 µm minimum spacing between features is limited by the thermal shrinkage and adhesive contact of the polyimide tape to 40 µm. The patterned glass substrates are etched in 49% hydrofluoric acid at ambient temperature with soft agitation (in time increments, up to 60 min duration). In spite of the simplicity, our method demonstrates comparable results to the other current more sophisticated masking methods in terms of the etched depth (up to 300 µm in borosilicate glass), feature under etch ratio in isotropic etch (~1.36), and low mask hole density. The method demonstrates high yield and reliability. To our knowledge, this method is the first proposed technique for rapid prototyping of microfluidic systems in glass with such high performance parameters. The proposed method of fabrication can potentially be implemented in research institutions without access to a standard clean-room facility.

An Easy to Manufacture Micro Gas Preconcentrator for Chemical Sensing Applications.

PubMed

McCartney, Mitchell M; Zrodnikov, Yuriy; Fung, Alexander G; LeVasseur, Michael K; Pedersen, Josephine M; Zamuruyev, Konstantin O; Aksenov, Alexander A; Kenyon, Nicholas J; Davis, Cristina E

2017-08-25

We have developed a simple-to-manufacture microfabricated gas preconcentrator for MEMS-based chemical sensing applications. Cavities and microfluidic channels were created using a wet etch process with hydrofluoric acid, portions of which can be performed outside of a cleanroom, instead of the more common deep reactive ion etch process. The integrated heater and resistance temperature detectors (RTDs) were created with a photolithography-free technique enabled by laser etching. With only 28 V DC (0.1 A), a maximum heating rate of 17.6 °C/s was observed. Adsorption and desorption flow parameters were optimized to be 90 SCCM and 25 SCCM, respectively, for a multicomponent gas mixture. Under testing conditions using Tenax TA sorbent, the device was capable of measuring analytes down to 22 ppb with only a 2 min sample loading time using a gas chromatograph with a flame ionization detector. Two separate devices were compared by measuring the same chemical mixture; both devices yielded similar peak areas and widths (fwhm: 0.032-0.033 min), suggesting reproducibility between devices.

X-ray diffraction study of elemental erbium to 70 GPa

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pravica, Michael G.; Romano, Edward; Quine, Zachary

2005-12-01

We have investigated phase transitions in elemental erbium in a diamond anvil cell (DAC) up to 70 GPa using angular-dispersive x-ray powder diffraction methods. We present evidence of a series of phase transitions that appear to follow the anticipated hcp{yields}Sm-type{yields}double hcp (dhcp){yields}distorted fcc sequence. In particular, we present evidence for the predicted dhcp{yields}distorted fcc transition above 63 GPa. Equation of state data are also presented up to 70 GPa.

Intermode light diffusion in multimode optical waveguides with rough surfaces.

PubMed

Stepanov, S; Chaikina, E I; Leskova, T A; Méndez, E R

2005-06-01

A theoretical analysis of incoherent intermode light power diffusion in multimode dielectric waveguides with rough (corrugated) surfaces is presented. The correlation length a of the surface-profile variations is assumed to be sufficiently large (a less less than lambda/2pi) to permit light scattering into the outer space only from the modes close to the critical angles of propagation and yet sufficiently small (a less less than d, where d is the average width of the waveguide) to permit direct interaction between a given mode and a large number of neighboring ones. The cases of a one-dimensional (1D) slab waveguide and a two-dimensional cylindrical waveguide (optical fiber) are analyzed, and we find that in both cases the partial differential equations that govern the evolution of the angular light power profile propagating along the waveguide are 1D and of the diffusion type. However, whereas in the former case the effective conductivity coefficient proves to be linearly dependent on the transverse-mode wave number, in the latter one the linear dependence is for the effective diffusion coefficient. The theoretical predictions are in reasonable agreement with experimental results for the intermode power diffusion in multimode (700 x 700) optical fibers with etched surfaces. The characteristic length of dispersion of a narrow angular power profile evaluated from the correlation length and standard deviation of heights of the surface profile proved to be in good agreement with the experimentally observed changes in the output angular power profiles.

Atomic layer deposition frequency-multiplied Fresnel zone plates for hard x-rays focusing

DOE PAGES

Moldovan, Nicolaie; Divan, Ralu; Zeng, Hongjun; ...

2017-12-01

The design and fabrication of Fresnel zone plates for hard x-ray focusing up to 25 keV photon energies with better than 50 nm imaging half-pitch resolution is reported as performed by forming an ultrananocrystalline diamond (UNCD) scaffold, subsequently coating it with atomic layer deposition (ALD) with an absorber/phase shifting material, followed by back side etching of Si to form a diamond membrane device. The scaffold is formed by chemical vapor-deposited UNCD, electron beam lithography, and deep-reactive ion etching of diamond to desired specifications. The benefits of using diamond are as follows: improved mechanical robustness to prevent collapse of high-aspect-ratio ringmore » structures, a known high-aspect-ratio etch method, excellent radiation hardness, extremely low x-ray absorption, and significantly improved thermal/dimensional stability as compared to alternative materials. Central to the technology is the high-resolution patterning of diamond membranes at wafer scale, which was pushed to 60 nm lines and spaces etched 2.2-mu m-deep, to an aspect ratio of 36:1. The absorber growth was achieved by ALD of Ir, Pt, or W, while wafer-level processing allowed to obtain up to 121 device chips per 4 in. wafer with yields better than 60%. X-ray tests with such zone plates allowed resolving 50 nm lines and spaces, at the limit of the available resolution test structures.« less

Nb/Al-AlOx/Nb Edge Junctions for Distributed Mixers

NASA Astrophysics Data System (ADS)

Amos, R. S.; Lichtenberger, A. W.; Tong, C. E.; Blundell, R.; Pan, S.-K.; Kerr, A. R.

We have fabricated high quality Nb/Al-oxide/Al/Nb edge junctions using a Nb/SiO/sub 2/ bi-layer film as the base electrode, suitable for use as traveling wave mixers. An edge is cut in the bi-layer with an ion gun at a 45 degree angle using a photoresist mask. The wafer is then cleaned in-situ with a physical ion gun clean followed by the deposition of a thin Al (a1) film, which is then thermally oxidized, an optional second Al (a2) layer, and a Nb counter electrode. It was found that devices with an a2 layer resulted in superior electrical characteristics, though proximity effects increased strongly with a2 thickness. The counter electrode is defined with an SF/sub 6/+N/sub 2/ reactive ion etch, using the Al barrier layer as an etch stop. The Al barrier layer is then either removed with an Al wet etch to isolate the individual devices, or the devices are separated with an anodization process. Various ion gun cleaning conditions have been examined; in addition, both wet and plasma etch bi-layer edge surface pre-treatments were investigated. It was found that edge junctions with large widths (i.e., those more suitable for traveling wave mixers) typically benefited more from such treatments. Initial receiver results at 260 GHz have yielded a DSB noise temperature of 60 K.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moldovan, Nicolaie; Divan, Ralu; Zeng, Hongjun

The design and fabrication of Fresnel zone plates for hard x-ray focusing up to 25 keV photon energies with better than 50 nm imaging half-pitch resolution is reported as performed by forming an ultrananocrystalline diamond (UNCD) scaffold, subsequently coating it with atomic layer deposition (ALD) with an absorber/phase shifting material, followed by back side etching of Si to form a diamond membrane device. The scaffold is formed by chemical vapor-deposited UNCD, electron beam lithography, and deep-reactive ion etching of diamond to desired specifications. The benefits of using diamond are as follows: improved mechanical robustness to prevent collapse of high-aspect-ratio ringmore » structures, a known high-aspect-ratio etch method, excellent radiation hardness, extremely low x-ray absorption, and significantly improved thermal/dimensional stability as compared to alternative materials. Central to the technology is the high-resolution patterning of diamond membranes at wafer scale, which was pushed to 60 nm lines and spaces etched 2.2-mu m-deep, to an aspect ratio of 36:1. The absorber growth was achieved by ALD of Ir, Pt, or W, while wafer-level processing allowed to obtain up to 121 device chips per 4 in. wafer with yields better than 60%. X-ray tests with such zone plates allowed resolving 50 nm lines and spaces, at the limit of the available resolution test structures.« less

Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

NASA Astrophysics Data System (ADS)

Gray, David C.

1992-01-01

A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617 -253-5668; Fax 617-253-1690.) (Abstract shortened with permission of school.).

Comparative efficacy of Er,Cr:YSGG and Er:YAG lasers for etching of composite for orthodontic bracket bonding.

PubMed

Mirhashemi, Amir Hossein; Chiniforush, Nasim; Sharifi, Nastaran; Hosseini, Amir Mehdi

2018-05-01

Several techniques have been proposed to obtain a durable bond, and the efficacy of these techniques is assessed by measuring parameters such as bond strength. Laser has provided a bond strength as high as that of acid etching in vitro and has simpler use with shorter clinical time compared to acid etching. This study aimed to compare the efficacy of Er:YAG and Er,Cr:YSGG lasers for etching and bonding of composite to orthodontic brackets. No previous study has evaluated the effect of these particular types of laser. A total of 70 composite blocks were randomly divided into five groups (n = 14): group 1, etching with phosphoric acid for 20 s; group 2, Er:YAG laser irradiation with 2 W power for 10 s; group 3, Er:YAG laser with 3 W power for 10 s; group 4, Er,Cr:YSGG laser with 2 W power for 10 s; group 5, Er,Cr:YSGG laser with 3 W power for 10 s. Metal brackets were then bonded to composites, and after 5000 thermal cycles, they were subjected to shear bond strength test in a universal testing machine after 24 h of water storage. One sample of each group was evaluated under a scanning electron microscope (SEM) to assess changes in composite surface after etching. The adhesive remnant index (ARI) was calculated under a stereomicroscope. Data were statistically analyzed. The mean and standard deviation of shear bond strength were 18.65 ± 3.36, 19.68 ± 5.34, 21.31 ± 4.03, 17.38 ± 6.94, and 16.45 ± 4.26 MPa in groups 1-5, respectively. The ARI scores showed that the bond failure mode in all groups was mainly mixed. The groups were not significantly different in terms of shear bond strength. Er:YAG and Er,Cr:YSGG lasers with the mentioned parameters yield optimal shear bond strength and can be used as an alternative to acid etching for bracket bond to composite.

Chemical weathering in a tropical watershed, Luquillo Mountains, Puerto Rico III: Quartz dissolution rates

USGS Publications Warehouse

Schulz, M.S.; White, A.F.

1999-01-01

The paucity of weathering rates for quartz in the natural environment stems both from the slow rate at which quartz dissolves and the difficulty in differentiating solute Si contributed by quartz from that derived from other silicate minerals. This study, a first effort in quantifying natural rates of quartz dissolution, takes advantage of extremely rapid tropical weathering, simple regolith mineralogy, and detailed information on hydrologic and chemical transport. Quartz abundances and grain sizes are relatively constant with depth in a thick saprolite. Limited quartz dissolution is indicated by solution rounding of primary angularity and by the formation of etch pits. A low correlation of surface area (0.14 and 0.42 m2 g-1) with grain size indicates that internal microfractures and pitting are the principal contributors to total surface area. Pore water silica concentration increases linearly with depth. On a molar basis, between one and three quarters of pore water silica is derived from quartz with the remainder contributed from biotite weathering. Average solute Si remains thermodynamically undersaturated with respect to recently revised estimates of quartz solubility (17-81 ??M). Etch pitting is more abundant on grains in the upper saprolite and is associated with pore waters lower in dissolved silica. Rate constants describing quartz dissolution increase with decreasing depth (from 10-14.5-10-15.1 mol m-2 s-1), which correlate with both greater thermodynamic undersaturation and increasing etch pit densities. Unlike for many aluminosilicates, the calculated natural weathering rates of quartz fall slightly below the rate constants previously reported for experimental studies (10-12.4-10-14.2 mol m-2 s-1). This agreement reflects the structural simplicity of quartz, dilute solutes, and near-hydrologic saturation.

High angular resolution at LBT

NASA Astrophysics Data System (ADS)

Conrad, A.; Arcidiacono, C.; Bertero, M.; Boccacci, P.; Davies, A. G.; Defrere, D.; de Kleer, K.; De Pater, I.; Hinz, P.; Hofmann, K. H.; La Camera, A.; Leisenring, J.; Kürster, M.; Rathbun, J. A.; Schertl, D.; Skemer, A.; Skrutskie, M.; Spencer, J. R.; Veillet, C.; Weigelt, G.; Woodward, C. E.

2015-12-01

High angular resolution from ground-based observatories stands as a key technology for advancing planetary science. In the window between the angular resolution achievable with 8-10 meter class telescopes, and the 23-to-40 meter giants of the future, LBT provides a glimpse of what the next generation of instruments providing higher angular resolution will provide. We present first ever resolved images of an Io eruption site taken from the ground, images of Io's Loki Patera taken with Fizeau imaging at the 22.8 meter LBT [Conrad, et al., AJ, 2015]. We will also present preliminary analysis of two data sets acquired during the 2015 opposition: L-band fringes at Kurdalagon and an occultation of Loki and Pele by Europa (see figure). The light curves from this occultation will yield an order of magnitude improvement in spatial resolution along the path of ingress and egress. We will conclude by providing an overview of the overall benefit of recent and future advances in angular resolution for planetary science.

Room-temperature processing of CdSe quantum dots with tunable sizes

NASA Astrophysics Data System (ADS)

Joo, So-Yeong; Jeong, Da-Woon; Lee, Chan-Gi; Kim, Bum-Sung; Park, Hyun-Su; Kim, Woo-Byoung

2017-06-01

In this work, CdSe quantum dots (QDs) with tunable sizes have been fabricated via photo-induced chemical etching at room temperature, and the related reaction mechanism was investigated. The surface of QDs was oxidized by the holes generated through photon irradiation of oxygen species, and the obtained oxide layer was dissolved in an aqueous solution of 3-amino-1-propanol (APOL) with an APOL:H2O volume ratio of 5:1. The generated electrons promoted QD surface interactions with amino groups, which ultimately passivated surface defects. The absorption and photoluminescence emission peaks of the produced QDs were clearly blue-shifted about 26 nm with increasing time, and the resulting quantum yield for an 8 h etched sample was increased from 20% to 26%, as compared to the initial sample.

Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

NASA Astrophysics Data System (ADS)

Shin, Beom-Ki; Lee, Tae-Il; Park, Ji-Hyeon; Park, Kang-Il; Ahn, Kyung-Jun; Park, Sung-Kee; Lee, Woong; Myoung, Jae-Min

2011-11-01

Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.

Sputtered Thin Film Research

DTIC Science & Technology

1974-11-01

yield (100) oriented wafers, which were lapped and chemi-mechanically polished in sulf uric-peroxide or sodium hypochlorite etches. Prior to mounting...This material will viot oxidize, melt, or diffuse during the subsequent high temperature processing. Platinum silicide contacts are used because...formation of the platinum silicide contacts, the gate region was opened and the wafer was placed in the sput- tering chamber. The same deposition

Real-Time Plasma Process Condition Sensing and Abnormal Process Detection

PubMed Central

Yang, Ryan; Chen, Rongshun

2010-01-01

The plasma process is often used in the fabrication of semiconductor wafers. However, due to the lack of real-time etching control, this may result in some unacceptable process performances and thus leads to significant waste and lower wafer yield. In order to maximize the product wafer yield, a timely and accurately process fault or abnormal detection in a plasma reactor is needed. Optical emission spectroscopy (OES) is one of the most frequently used metrologies in in-situ process monitoring. Even though OES has the advantage of non-invasiveness, it is required to provide a huge amount of information. As a result, the data analysis of OES becomes a big challenge. To accomplish real-time detection, this work employed the sigma matching method technique, which is the time series of OES full spectrum intensity. First, the response model of a healthy plasma spectrum was developed. Then, we defined a matching rate as an indictor for comparing the difference between the tested wafers response and the health sigma model. The experimental results showed that this proposal method can detect process faults in real-time, even in plasma etching tools. PMID:22219683

Preparation of grape-like Bi{sub 2}O{sub 3}/Ti photoanode and its visible light activity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Guoting; Department of Biology, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR; Yip, H.Y.

2011-02-15

Graphical abstract: Compact and grape-like bismuth oxide (Bi{sub 2}O{sub 3}) coated titania (Ti) anode was prepared by oxalic acid (H{sub 2}C{sub 2}O{sub 4}) etching, electrodeposition and calcination in order to explore its photoelectrocatalytic activities. The Bi{sub 2}O{sub 3} coating was demonstrated to be full of pores, and a good combination between Bi{sub 2}O{sub 3} layer and honeycomb-like Ti substrate was observed by scanning electron microscopy. A synergy was found between electrolysis and photocatalysis using the prepared Bi{sub 2}O{sub 3}/Ti anode for photoelectrocatalytic oxidation of azo dye Acid Orange 7 under visible light irradiation (420 nm). Research highlights: {yields} Bi{sub 2}O{submore » 3}/Ti anode was prepared by H{sub 2}C{sub 2}O{sub 4} etching, electrodeposition and calcination. {yields} A compact and grape-like Bi{sub 2}O{sub 3} coated Ti anode was obtained. {yields} Bi{sub 2}O{sub 3} coating was full of pores, and have a good combination with Ti substrate. {yields} A synergy was observed in photoelectrocatalytic oxidation under visible light. -- Abstract: Compact and grape-like bismuth oxide (Bi{sub 2}O{sub 3}) coated titania (Ti) anode was prepared by oxalic acid (H{sub 2}C{sub 2}O{sub 4}) etching, electrodeposition and calcination in order to explore its photoelectrocatalytic activities. The Bi{sub 2}O{sub 3} coating was demonstrated to be full of pores, and a good combination between Bi{sub 2}O{sub 3} layer and honeycomb-like Ti substrate was observed by scanning electron microscopy. The characteristic morphology of Bi{sub 2}O{sub 3} coating indicated that the electrode is stable during degradation. The Bi{sub 2}O{sub 3}/Ti electrode was used in oxidative degradation of Acid Orange 7 by electrolysis, photocatalytic oxidation and photoelectrocatalytic oxidation processes. The pseudo-first order kinetics parameter (K{sub app}) of photoelectrocatalytic process was 1.15 times of the sum of electrolysis and photocatalytic oxidation under visible light irradiation at 420 nm. The results indicated that the synergy of electrolysis and photocatalysis lead to an excellent photoelectrocatalytic property of the Bi{sub 2}O{sub 3}/Ti electrode.« less

Developments in Human Centered Cueing Algorithms for Control of Flight Simulator Motion Systems

NASA Technical Reports Server (NTRS)

Houck, Jacob A.; Telban, Robert J.; Cardullo, Frank M.

1997-01-01

The authors conducted further research with cueing algorithms for control of flight simulator motion systems. A variation of the so-called optimal algorithm was formulated using simulated aircraft angular velocity input as a basis. Models of the human vestibular sensation system, i.e. the semicircular canals and otoliths, are incorporated within the algorithm. Comparisons of angular velocity cueing responses showed a significant improvement over a formulation using angular acceleration input. Results also compared favorably with the coordinated adaptive washout algorithm, yielding similar results for angular velocity cues while eliminating false cues and reducing the tilt rate for longitudinal cues. These results were confirmed in piloted tests on the current motion system at NASA-Langley, the Visual Motion Simulator (VMS). Proposed future developments by the authors in cueing algorithms are revealed. The new motion system, the Cockpit Motion Facility (CMF), where the final evaluation of the cueing algorithms will be conducted, is also described.

Two hump-shaped angular distributions of neutrons and soft X-rays in a small plasma focus device.

PubMed

Habibi, Morteza

2018-03-01

Angular distributions of soft X-rays (SXRs) and neutrons emitted by a small plasma focus device (PFD) were investigated simultaneously using TLD-100 dosimeters and Geiger-Muller activation counters, respectively. The distributions represented two humps with a small dip at the angular position 0° and reduced from the angles of ± 15° and ± 30° for the neutrons and SXRs, respectively. The maximum yield of 2.98 × 10 8 neutrons per shot of the device was obtained at 13.5kV and 6.5mbar. A time of flight (TOF) of 75.2ns between the hard X-ray and the neutron peaks corresponds to neutrons with energy of 2.67MeV. A similar behavior was observed between the angular distributions of neutron and soft X-ray emissions. Copyright © 2018 Elsevier Ltd. All rights reserved.

Medical tomograph system using ultrasonic transmission

NASA Technical Reports Server (NTRS)

Heyser, Richard C. (Inventor); Nathan, Robert (Inventor)

1978-01-01

Ultrasonic energy transmission in rectilinear array scanning patterns of soft tissue provides projection density values of the tissue which are recorded as a function of scanning position and angular relationship, .theta., of the subject with a fixed coordinate system. A plurality of rectilinear scan arrays in the same plane for different angular relationships .theta..sub.1 . . . .theta..sub.n thus recorded are superimposed. The superimposition of intensity values thus yields a tomographic image of an internal section of the tissue in the scanning plane.

Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth.

PubMed

Lim, Kipil; Jang, Ho Seong; Woo, Kyoungja

2012-12-07

Blue (<480 nm) emitting Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been challenging. Here we present blue emitting InP/ZnS core/shell QDs with a band edge emission of 475 nm and a full width at half maximum of 39 nm (215 meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150 °C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150 °C. Etching was dominant at temperatures below 150 °C, whereas growth was dominant at temperatures above 150 °C. ZnS shells were formed successfully at 150 °C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs.

Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth

NASA Astrophysics Data System (ADS)

Lim, Kipil; Jang, Ho Seong; Woo, Kyoungja

2012-12-01

Blue (<480 nm) emitting Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been challenging. Here we present blue emitting InP/ZnS core/shell QDs with a band edge emission of 475 nm and a full width at half maximum of 39 nm (215 meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150 °C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150 °C. Etching was dominant at temperatures below 150 °C, whereas growth was dominant at temperatures above 150 °C. ZnS shells were formed successfully at 150 °C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs.

Frequency tunable near-infrared metamaterials based on VO2 phase transition.

PubMed

Dicken, Matthew J; Aydin, Koray; Pryce, Imogen M; Sweatlock, Luke A; Boyd, Elizabeth M; Walavalkar, Sameer; Ma, James; Atwater, Harry A

2009-09-28

Engineering metamaterials with tunable resonances from mid-infrared to near-infrared wavelengths could have far-reaching consequences for chip based optical devices, active filters, modulators, and sensors. Utilizing the metal-insulator phase transition in vanadium oxide (VO(2)), we demonstrate frequency-tunable metamaterials in the near-IR range, from 1.5 - 5 microns. Arrays of Ag split ring resonators (SRRs) are patterned with e-beam lithography onto planar VO(2) and etched via reactive ion etching to yield Ag/VO(2) hybrid SRRs. FTIR reflection data and FDTD simulation results show the resonant peak position red shifts upon heating above the phase transition temperature. We also show that, by including coupling elements in the design of these hybrid Ag/VO(2) bi-layer structures, we can achieve resonant peak position tuning of up to 110 nm.

WSi2/Si multilayer sectioning by reactive ion etching for multilayer Laue lens fabrication

NASA Astrophysics Data System (ADS)

Bouet, N.; Conley, R.; Biancarosa, J.; Divan, R.; Macrander, A. T.

2010-09-01

Reactive ion etching (RIE) has been employed in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive x-ray optics with a large investment put towards the development of deep RIE. Due to the intrinsic differing chemistries related to reactivity, ion bombardment, and passivation of materials, the development of recipes for new materials or material systems can require intense effort and resources. For silicon in particular, methods have been developed to provide reliable anisotropic profiles with good dimensional control and high aspect ratios1,2,3, high etch rates, and excellent material to mask etch selectivity. A multilayer Laue lens4 is an x-ray focusing optic, which is produced by depositing many layers of two materials with differing electron density in a particular stacking sequence where the each layer in the stack satisfies the Fresnel zone plate law. When this stack is sectioned to allow side-illumination with radiation, the diffracted exiting radiation will constructively interfere at the focal point. Since the first MLLs were developed at Argonne in the USA in 20064, there have been published reports of MLL development efforts in Japan5, and, very recently, also in Germany6. The traditional technique for sectioning multilayer Laue lens (MLL) involves mechanical sectioning and polishing7, which is labor intensive and can induce delamination or structure damage and thereby reduce yield. If a non-mechanical technique can be used to section MLL, it may be possible to greatly shorten the fabrication cycle, create more usable optics from the same amount of deposition substrate, and perhaps develop more advanced structures to provide greater stability or flexibility. Plasma etching of high aspect-ratio multilayer structures will also expand the scope for other types of optics fabrication (such as gratings, zone plates, and so-on). However, well-performing reactive ion etching recipes have been developed for only a small number of materials, and even less recipes exist for concurrent etching of more than one element so a fully material specific process needs to be developed. In this paper, sectioning of WSi2/Si multilayers for MLL fabrication using fluorinated gases is investigated. The main goals were to demonstrate the feasibility of this technique, achievement of high anisotropy, adequate sidewall roughness control and high etching rates. We note that this development for MLL sidewalls should be distinguished from work on improving aspect ratios in traditional Fresnel zone plates. Aspect ratios for MLL sidewalls are not similarly constrained.

Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation

NASA Astrophysics Data System (ADS)

Mayangsari, Tirta R.; Yusup, Luchana L.; Park, Jae-Min; Blanquet, Elisabeth; Pons, Michel; Jung, Jongwan; Lee, Won-Jun

2017-06-01

We modeled and simulated the surface reaction of silicon precursor on different surfaces by thermodynamic analysis and density functional theory calculation. We considered SiH2Cl2 and argon as the silicon precursor and the carrier gas without etchant gas. First, the equilibrium composition of both gaseous and solid species was analyzed as a function of process temperature. SiCl4 is the dominant gaseous species at below 750 °C, and SiCl2 and HCl are dominant at higher temperatures, and the yield of silicon decreases with increasing temperature over 700 °C due to the etching of silicon by HCl. The yield of silicon for SiO2 substrate is lower than that for silicon substrate, especially at 1000 °C or higher. Zero deposition yield and the etching of SiO2 substrate at higher temperatures leads to selective growth on silicon substrate. Next, the adsorption and the reaction of silicon precursor was simulated on H-terminated silicon (100) substrate and on OH-terminated β-cristobalite substrate. The adsorption and reaction of a SiH2Cl2 molecule are spontaneous for both Si and SiO2 substrates. However, the energy barrier for reaction is very small (6×10-4 eV) for Si substrate, whereas the energy barrier is high (0.33 eV) for SiO2 substrate. This makes the differences in growth rate, which also supports the experimental results in literature.

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

DOEpatents

Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

2015-01-06

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

DOEpatents

Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

2013-02-19

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

A Novel Permanent Magnetic Angular Acceleration Sensor

PubMed Central

Zhao, Hao; Feng, Hao

2015-01-01

Angular acceleration is an important parameter for status monitoring and fault diagnosis of rotary machinery. Therefore, we developed a novel permanent magnetic angular acceleration sensor, which is without rotation angle limitations and could directly measure the instantaneous angular acceleration of the rotating system. The sensor rotor only needs to be coaxially connected with the rotating system, which enables convenient sensor installation. For the cup structure of the sensor rotor, it has a relatively small rotational inertia. Due to the unique mechanical structure of the sensor, the output signal of the sensor can be directed without a slip ring, which avoids signal weakening effect. In this paper, the operating principle of the sensor is described, and simulated using finite element method. The sensitivity of the sensor is calibrated by torsional pendulum and angle sensor, yielding an experimental result of about 0.88 mV/(rad·s−2). Finally, the angular acceleration of the actual rotating system has been tested, using both a single-phase asynchronous motor and a step motor. Experimental result confirms the operating principle of the sensor and indicates that the sensor has good practicability. PMID:26151217

Measurement of the azimuthal angle distribution of leptons from W boson decays as a function of the W transverse momentum in pp collisions at {radical}(s)=1.8 TeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Acosta, D.; Field, R.D.; Klimenko, S.

We present the first measurement of the A{sub 2} and A{sub 3} angular coefficients of the W boson produced in proton-antiproton collisions. We study W{yields}e{nu}{sub e} and W{yields}{mu}{nu}{sub {mu}} candidate events produced in association with at least one jet at CDF, during Run Ia and Run Ib of the Tevatron at {radical}(s)=1.8 TeV. The corresponding integrated luminosity was 110 pb{sup -1}. The jet balances the transverse momentum of the W and introduces QCD effects in W boson production. The extraction of the angular coefficients is achieved through the direct measurement of the azimuthal angle of the charged lepton in themore » Collins-Soper rest-frame of the W boson. The angular coefficients are measured as a function of the transverse momentum of the W boson. The electron, muon, and combined results are in good agreement with the standard model prediction, up to order {alpha}{sub s}{sup 2} in QCD.« less

A comparison of shear bond strength of orthodontic brackets bonded with four different orthodontic adhesives

PubMed Central

Sharma, Sudhir; Tandon, Pradeep; Nagar, Amit; Singh, Gyan P; Singh, Alka; Chugh, Vinay K

2014-01-01

Objectives: The objective of this study is to compare the shear bond strength (SBS) of stainless steel (SS) orthodontic brackets bonded with four different orthodontic adhesives. Materials and Methods: Eighty newly extracted premolars were bonded to 0.022 SS brackets (Ormco, Scafati, Italy) and equally divided into four groups based on adhesive used: (1) Rely-a-Bond (self-cure adhesive, Reliance Orthodontic Product, Inc., Illinois, USA), (2) Transbond XT (light-cure adhesive, 3M Unitek, CA, USA), (3) Transbond Plus (sixth generation self-etch primer, 3M Unitek, CA, USA) with Transbond XT (4) Xeno V (seventh generation self-etch primer, Dentsply, Konstanz, Germany) with Xeno Ortho (light-cure adhesive, Dentsply, Konstanz, Germany) adhesive. Brackets were debonded with a universal testing machine (Model No. 3382 Instron Corp., Canton, Mass, USA). The adhesive remnant index (ARI) was recordedIn addition, the conditioned enamel surfaces were observed under a scanning electron microscope (SEM). Results: Transbond XT (15.49 MPa) attained the highest bond strength. Self-etching adhesives (Xeno V, 13.51 MPa; Transbond Plus, 11.57 MPa) showed clinically acceptable SBS values and almost clean enamel surface after debonding. The analysis of variance (F = 11.85, P < 0.0001) and Chi-square (χ2 = 18.16, P < 0.05) tests revealed significant differences among groups. The ARI score of 3 (i.e., All adhesives left on the tooth) to be the most prevalent in Transbond XT (40%), followed by Rely-a-Bond (30%), Transbond Plus with Transbond XT (15%), and Xeno V with Xeno Ortho (10%). Under SEM, enamel surfaces after debonding of the brackets appeared porous when an acid-etching process was performed on the surfaces of Rely-a-Bond and Transbond XT, whereas with self-etching primers enamel presented smooth and almost clean surfaces (Transbond Plus and Xeno V group). Conclusion: All adhesives yielded SBS values higher than the recommended bond strength (5.9-7–8 MPa), Seventh generation self-etching primer Xeno V with Xeno Ortho showed clinically acceptable SBS and the least amount of residual adhesive left on the enamel surface after debonding. PMID:24987660

Q-plates as higher order polarization controllers for orbital angular momentum modes of fiber.

PubMed

Gregg, P; Mirhosseini, M; Rubano, A; Marrucci, L; Karimi, E; Boyd, R W; Ramachandran, S

2015-04-15

We demonstrate that a |q|=1/2 plate, in conjunction with appropriate polarization optics, can selectively and switchably excite all linear combinations of the first radial mode order |l|=1 orbital angular momentum (OAM) fiber modes. This enables full mapping of free-space polarization states onto fiber vector modes, including the radially (TM) and azimuthally polarized (TE) modes. The setup requires few optical components and can yield mode purities as high as ∼30  dB. Additionally, just as a conventional fiber polarization controller creates arbitrary elliptical polarization states to counteract fiber birefringence and yield desired polarizations at the output of a single-mode fiber, q-plates disentangle degenerate state mixing effects between fiber OAM states to yield pure states, even after long-length fiber propagation. We thus demonstrate the ability to switch dynamically, potentially at ∼GHz rates, between OAM modes, or create desired linear combinations of them. We envision applications in fiber-based lasers employing vector or OAM mode outputs, as well as communications networking schemes exploiting spatial modes for higher dimensional encoding.

Runway Exit Designs for Capacity Improvement Demonstrations. Phase 1. Algorithm Development

DTIC Science & Technology

1990-06-01

Dynamic Module 39 Table 3.1 Aircraft Approach Category Classification (FAA, 1988). Category Landing Speed (1.3 Vst ,,,) A less than 91 Knots B From 91 to...inertia about the vertical axis, in Kg-m-m, a is the angular acceleration (rad/sec,) of the aircraft fuselage as it executes the turning maneuver, wb is the...breakdown of the angular acceleration yields for Eq. 3.13 the following, I/ (V R 2 / g"= m g wb Im/100 (1- Im100) (3.16) where, R represents the rate of

Shower disc sampling and the angular resolution of gamma-ray shower detectors

NASA Technical Reports Server (NTRS)

Lambert, A.; Lloyd-Evans, J.

1985-01-01

As part of the design study for the new UHE gamma ray detector being constsructed at Haverah Park, a series of experiments using scintillators operated side-by-side in 10 to the 15th power eV air showers are undertaken. Investigation of the rms sampling fluctuations in the shower disc arrival time yields an upper limit to the intrinsic sampling uncertainty, sigma sub rms = (1.1 + or - 0.1)ns, implying an angular resolution capability 1 deg for an inter-detector spacing of approximately 25 m.

Penetration Effects of the Compound Vortex in Gas Metal-Arc Welding

DTIC Science & Technology

1988-05-01

steel plate using constant current GMAW equipment and argon + 2;. oxygen shielding gas. After welding, the plates were cut, ground, polished and etched...49 14. Typical time plot of current used in pulsed GMAW ..... 51 15. The experimental apparatus ........................... 54 16. Plot...this phenomenon could be employed in some manner to yield high penetration welds with low average current. 2. Pulsed GMAW . KolodziejczaK [26] studied

Nanoscale Topography on Black Titanium Imparts Multi-biofunctional Properties for Orthopedic Applications

NASA Astrophysics Data System (ADS)

Hasan, Jafar; Jain, Shubham; Chatterjee, Kaushik

2017-01-01

We have developed a chlorine based reactive ion etching process to yield randomly oriented anisotropic nanostructures that render the titanium metal surface ‘black’ similar to that of black silicon. The surface appears black due to the nanostructures in contrast to the conventional shiny surface of titanium. The nanostructures were found to kill bacteria on contact by mechanically rupturing the cells as has been observed previously on wings of certain insects. The etching was optimized to yield nanostructures of ≈1 μm height for maximal bactericidal efficiency without compromising cytocompatibility. Within 4 hours of contact with the black titanium surface, 95% ± 5% of E. coli, 98% ± 2% of P. aeruginosa, 92% ± 5% of M. smegmatis and 22% ± 8% of S. aureus cells that had attached were killed. The killing efficiency for the S. aureus increased to 76% ± 4% when the cells were allowed to adhere up to 24 hours. The black titanium supported the attachment and proliferation of human mesenchymal stem cells and augmented osteogenic lineage commitment in vitro. Thus, the bioinspired nanostructures on black titanium impart multi-biofunctional properties toward engineering the next-generation biomaterials for orthopedic implants.

Nanoscale Topography on Black Titanium Imparts Multi-biofunctional Properties for Orthopedic Applications

PubMed Central

Hasan, Jafar; Jain, Shubham; Chatterjee, Kaushik

2017-01-01

We have developed a chlorine based reactive ion etching process to yield randomly oriented anisotropic nanostructures that render the titanium metal surface ‘black’ similar to that of black silicon. The surface appears black due to the nanostructures in contrast to the conventional shiny surface of titanium. The nanostructures were found to kill bacteria on contact by mechanically rupturing the cells as has been observed previously on wings of certain insects. The etching was optimized to yield nanostructures of ≈1 μm height for maximal bactericidal efficiency without compromising cytocompatibility. Within 4 hours of contact with the black titanium surface, 95% ± 5% of E. coli, 98% ± 2% of P. aeruginosa, 92% ± 5% of M. smegmatis and 22% ± 8% of S. aureus cells that had attached were killed. The killing efficiency for the S. aureus increased to 76% ± 4% when the cells were allowed to adhere up to 24 hours. The black titanium supported the attachment and proliferation of human mesenchymal stem cells and augmented osteogenic lineage commitment in vitro. Thus, the bioinspired nanostructures on black titanium impart multi-biofunctional properties toward engineering the next-generation biomaterials for orthopedic implants. PMID:28112235

Redundant via insertion in self-aligned double patterning

NASA Astrophysics Data System (ADS)

Song, Youngsoo; Jung, Jinwook; Shin, Youngsoo

2017-03-01

Redundant via (RV) insertion is employed to enhance via manufacturability, and has been extensively studied. Self-aligned double patterning (SADP) process, brings a new challenge to RV insertion since newly created cut for each RV insertion has to be taken care of. Specifically, when a cut for RV, which we simply call RV-cut, is formed, cut conflict may occur with nearby line-end cuts, which results in a decrease in RV candidates. We introduce cut merging to reduce the number of cut conflicts; merged cuts are processed with stitch using litho-etch-litho-etch (LELE) multi-patterning method. In this paper, we propose a new RV insertion method with cut merging in SADP for the first time. In our experiments, a simple RV insertion yields 55.3% vias to receives RVs; our proposed method that considers cut merging increases that number to 69.6% on average of test circuits.

InAlAs photovoltaic cell design for high device efficiency

DOE PAGES

Smith, Brittany L.; Bittner, Zachary S.; Hellstroem, Staffan D.; ...

2017-04-17

This study presents a new design for a single-junction InAlAs solar cell, which reduces parasitic absorption losses from the low band-gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti-reflective coating. The final cell had a 17.9% efficiency under 1-sun AM1.5 with an anti-reflective coating. Minority carrier diffusion lengths were extracted from external quantum efficiency data using physics-based device simulation software yielding 170 nm in the n-type emitter and 4.6 um in the p-type base, which is more than four times the diffusion lengthmore » previously reported for a p-type InAlAs base. In conclusion, this report represents significant progress towards a high-performance InAlAs top cell for a triple-junction design lattice-matched to InP.« less

Reference binding energies of transition metal carbides by core-level x-ray photoelectron spectroscopy free from Ar+ etching artefacts

NASA Astrophysics Data System (ADS)

Greczynski, G.; Primetzhofer, D.; Hultman, L.

2018-04-01

We report x-ray photoelectron spectroscopy (XPS) core level binding energies (BE's) for the widely-applicable groups IVb-VIb transition metal carbides (TMCs) TiC, VC, CrC, ZrC, NbC, MoC, HfC, TaC, and WC. Thin film samples are grown in the same deposition system, by dc magnetron co-sputtering from graphite and respective elemental metal targets in Ar atmosphere. To remove surface contaminations resulting from exposure to air during sample transfer from the growth chamber into the XPS system, layers are either (i) Ar+ ion-etched or (ii) UHV-annealed in situ prior to XPS analyses. High resolution XPS spectra reveal that even gentle etching affects the shape of core level signals, as well as BE values, which are systematically offset by 0.2-0.5 eV towards lower BE. These destructive effects of Ar+ ion etch become more pronounced with increasing the metal atom mass due to an increasing carbon-to-metal sputter yield ratio. Systematic analysis reveals that for each row in the periodic table (3d, 4d, and 5d) C 1s BE increases from left to right indicative of a decreased charge transfer from TM to C atoms, hence bond weakening. Moreover, C 1s BE decreases linearly with increasing carbide/metal melting point ratio. Spectra reported here, acquired from a consistent set of samples in the same instrument, should serve as a reference for true deconvolution of complex XPS cases, including multinary carbides, nitrides, and carbonitrides.

Capillary-scale direct measurement of hemoglobin concentration of erythrocytes using photothermal angular light scattering.

PubMed

Kim, Uihan; Song, Jaewoo; Lee, Donghak; Ryu, Suho; Kim, Soocheol; Hwang, Jaehyun; Joo, Chulmin

2015-12-15

We present a direct, rapid and chemical-free detection method for hemoglobin concentration ([Hb]), based on photothermal angular light scattering. The iron oxides contained in hemoglobin molecules exhibit high absorption of 532-nm light and generate heat under the illumination of 532-nm light, which subsequently alters the refractive index of blood. We measured this photothermal change in refractive index by employing angular light scattering spectroscopy with the goal of quantifying [Hb] in blood samples. Highly sensitive [Hb] measurement of blood samples was performed by monitoring the shifts in angularly dispersed scattering patterns from the blood-loaded microcapillary tubes. Our system measured [Hb] over the range of 0.35-17.9 g/dL with a detection limit of ~0.12 g/dL. Our sensor was characterized by excellent correlation with a reference hematology analyzer (r>0.96), and yielded a precision of 0.63 g/dL for a blood sample of 9.0 g/dL. Copyright © 2015 Elsevier B.V. All rights reserved.

Investigation of specimen size effects by in-situ microcompression of equal channel angular pressed copper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howard, C.; Frazer, D.; Lupinacci, A.

Here, micropillar compression testing was implemented on Equal Channel Angular Pressed copper samples ranging from 200 nm to 10 µm in side length in order to measure the mechanical properties yield strength, first load drop during plastic deformation at which there was a subsequent stress decrease with increasing strain, work hardening, and strain hardening exponent. Several micropillars containing multiple grains were investigated in a 200 nm grain sample. The effective pillar diameter to grain size ratios, D/d, were measured to be between 1.9 and 27.2. Specimens having D/d ratios between 0.2 and 5 were investigated in a second sample thatmore » was annealed at 200 °C for 2 h with an average grain size of 1.3 µm. No yield strength or elastic modulus size effects were observed in specimens in the 200 nm grain size sample. However work hardening increases with a decrease in critical ratios and first stress drops occur at much lower stresses for specimens with D/d ratios less than 5. For comparison, bulk tensile testing of both samples was performed, and the yield strength values of all micropillar compression tests for the 200 nm grained sample are in good agreement with the yield strength values of the tensile tests.« less

Investigation of specimen size effects by in-situ microcompression of equal channel angular pressed copper

DOE PAGES

Howard, C.; Frazer, D.; Lupinacci, A.; ...

2015-09-30

Here, micropillar compression testing was implemented on Equal Channel Angular Pressed copper samples ranging from 200 nm to 10 µm in side length in order to measure the mechanical properties yield strength, first load drop during plastic deformation at which there was a subsequent stress decrease with increasing strain, work hardening, and strain hardening exponent. Several micropillars containing multiple grains were investigated in a 200 nm grain sample. The effective pillar diameter to grain size ratios, D/d, were measured to be between 1.9 and 27.2. Specimens having D/d ratios between 0.2 and 5 were investigated in a second sample thatmore » was annealed at 200 °C for 2 h with an average grain size of 1.3 µm. No yield strength or elastic modulus size effects were observed in specimens in the 200 nm grain size sample. However work hardening increases with a decrease in critical ratios and first stress drops occur at much lower stresses for specimens with D/d ratios less than 5. For comparison, bulk tensile testing of both samples was performed, and the yield strength values of all micropillar compression tests for the 200 nm grained sample are in good agreement with the yield strength values of the tensile tests.« less

Ceramic Surface Treatment with a Single-component Primer: Resin Adhesion to Glass Ceramics.

PubMed

Prado, Mayara; Prochnow, Catina; Marchionatti, Ana Maria Estivalete; Baldissara, Paolo; Valandro, Luiz Felipe; Wandscher, Vinicius Felipe

2018-04-19

To evaluate the microshear bond strength (μSBS) of composite cement bonded to two machined glass ceramics and its durability, comparing conventional surface conditioning (hydrofluoric acid + silane) to a one-step primer (Monobond Etch & Prime). Machined slices of lithium disilicate ceramic (LDC) (IPS e.max CAD) and feldspathic ceramic (FC) (VITA Mark II) glass ceramics were divided into two groups (n = 10) according to two factors: 1. surface treatment: HF+S (ca 5% hydrofluoric acid [IPS Ceramic Etching GEL] + silane coupling agent [SIL; Monobond Plus]) or MEP (single-component ceramic conditioner; Monobond Etch & Prime); 2. storage condition: baseline (without aging; tested 24 h after cementing) or aged (70 days of water storage + 12,000 thermal cycles). Composite cement (Multilink Automix, Ivoclar Vivadent) was applied to starch matrices on the treated ceramic surfaces and photoactivated. A μSBS test was performed (0.5 mm/min) and the failure pattern was determined. Contact angle and micromorphological analyses were also performed. Data were analyzed with Student's t-test (α = 5%). For both ceramic materials, HF+S resulted in higher mean μSBS (MPa) at baseline (LDC: HF+S 21.2 ± 2.2 > MEP 10.4 ± 2.4; FC: HF+S 19.6 ± 4.3 > MEP 13.5 ± 5.4) and after aging (LDC: HF+S 14.64 ± 2.31 > MEP 9 ± 3.4; FC HF+S: 14.73 ± 3.33 > MEP 11.1 ± 3.3). HF+S resulted in a statistically significant decrease in mean μSBS after aging (p = 0.0001), while MEP yielded no significant reduction. The main failure type was adhesive between composite cement and ceramic. HF+S resuted in the lowest contact angle. Hydrofluoric acid + silane resulted in higher mean μSBS than Monobond Etch & Prime for both ceramics; however, Monobond Etch & Prime had stable bonding after aging.

Photoelectron yields of scintillation counters with embedded wavelength-shifting fibers read out with silicon photomultipliers

NASA Astrophysics Data System (ADS)

Artikov, Akram; Baranov, Vladimir; Blazey, Gerald C.; Chen, Ningshun; Chokheli, Davit; Davydov, Yuri; Dukes, E. Craig; Dychkant, Alexsander; Ehrlich, Ralf; Francis, Kurt; Frank, M. J.; Glagolev, Vladimir; Group, Craig; Hansen, Sten; Magill, Stephen; Oksuzian, Yuri; Pla-Dalmau, Anna; Rubinov, Paul; Simonenko, Aleksandr; Song, Enhao; Stetzler, Steven; Wu, Yongyi; Uzunyan, Sergey; Zutshi, Vishnu

2018-05-01

Photoelectron yields of extruded scintillation counters with titanium dioxide coating and embedded wavelength shifting fibers read out by silicon photomultipliers have been measured at the Fermilab Test Beam Facility using 120 GeV protons. The yields were measured as a function of transverse, longitudinal, and angular positions for a variety of scintillator compositions, reflective coating mixtures, and fiber diameters. Timing performance was also studied. These studies were carried out by the Cosmic Ray Veto Group of the Mu2e collaboration as part of their R&D program.

Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst.

PubMed

Dong, Yibo; Xie, Yiyang; Xu, Chen; Fu, Yafei; Fan, Xing; Li, Xuejian; Wang, Le; Xiong, Fangzhu; Guo, Weiling; Pan, Guanzhong; Wang, Qiuhua; Qian, Fengsong; Sun, Jie

2018-06-14

Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO 2 as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.

Nano-porous electrode systems by colloidal lithography for sensitive electrochemical detection: fabrication technology and properties

NASA Astrophysics Data System (ADS)

Lohmüller, Theobald; Müller, Ulrich; Breisch, Stefanie; Nisch, Wilfried; Rudorf, Ralf; Schuhmann, Wolfgang; Neugebauer, Sebastian; Kaczor, Markus; Linke, Stephan; Lechner, Sebastian; Spatz, Joachim; Stelzle, Martin

2008-11-01

A porous metal-insulator-metal sensor system was developed with the ultimate goal of enhancing the sensitivity of electrochemical sensors by taking advantage of redox cycling of electro active molecules between closely spaced electrodes. The novel fabrication technology is based on thin film deposition in combination with colloidal self-assembly and reactive ion etching to create micro- or nanopores. This cost effective approach is advantageous compared to common interdigitated electrode arrays (IDA) since it does not require high definition lithography technology. Spin-coating and random particle deposition, combined with a new sublimation process are discussed as competing strategies to generate monolayers of colloidal spheres. Metal-insulator-metal layer systems with low leakage currents < 10 pA and an insulator thickness as low as 100 nm were obtained at high yield (typically > 90%). We also discuss possible causes of sensor failure with respect to critical fabrication processes. Short circuits which could occur during or as a result of the pore etching process were investigated in detail. Infrared microscopy in combination with focused ion beam etching/SEM were used to reveal a defect mechanism creating interconnects and increased leakage current between the top and bottom electrodes. Redox cycling provides for amplification factors of >100. A general applicability for electrochemical diagnostic assays is therefore anticipated.

Empirical assessment of the detection efficiency of CR-39 at high proton fluence and a compact, proton detector for high-fluence applications

DOE PAGES

Rosenberg, M. J.; Séguin, F. H.; Waugh, C. J.; ...

2014-04-14

CR-39 solid-state nuclear track detectors are widely used in physics and in many inertial confinement fusion (ICF) experiments, and under ideal conditions these detectors have 100% detection efficiency for ~0.5–8 MeV protons. When the fluence of incident particles becomes too high, the overlap of particle tracks leads to under-counting at typical processing conditions (5h etch in 6N NaOH at 80°C). Short etch times required to avoid overlap can cause under-counting as well, as tracks are not fully developed. Experiments have determined the minimum etch times for 100% detection of 1.7–4.3-MeV protons and established that for 2.4-MeV protons, relevant for detectionmore » of DD protons, the maximum fluence that can be detected using normal processing techniques is ≲3 ×10 6 cm -2. A CR-39-based proton detector has been developed to mitigate issues related to high particle fluences on ICF facilities. Using a pinhole and scattering foil several mm in front of the CR-39, proton fluences at the CR-39 are reduced by more than a factor of ~50, increasing the operating yield upper limit by a comparable amount.« less

Advanced fabrication of Si nanowire FET structures by means of a parallel approach.

PubMed

Li, J; Pud, S; Mayer, D; Vitusevich, S

2014-07-11

In this paper we present fabricated Si nanowires (NWs) of different dimensions with enhanced electrical characteristics. The parallel fabrication process is based on nanoimprint lithography using high-quality molds, which facilitates the realization of 50 nm-wide NW field-effect transistors (FETs). The imprint molds were fabricated by using a wet chemical anisotropic etching process. The wet chemical etch results in well-defined vertical sidewalls with edge roughness (3σ) as small as 2 nm, which is about four times better compared with the roughness usually obtained for reactive-ion etching molds. The quality of the mold was studied using atomic force microscopy and scanning electron microscopy image data. The use of the high-quality mold leads to almost 100% yield during fabrication of Si NW FETs as well as to an exceptional quality of the surfaces of the devices produced. To characterize the Si NW FETs, we used noise spectroscopy as a powerful method for evaluating device performance and the reliability of structures with nanoscale dimensions. The Hooge parameter of fabricated FET structures exhibits an average value of 1.6 × 10(-3). This value reflects the high quality of Si NW FETs fabricated by means of a parallel approach that uses a nanoimprint mold and cost-efficient technology.

Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun

2010-07-15

This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fittingmore » the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.« less

A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained Si:P

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Veillerot, M.; Prévitali, B.

2017-10-01

We have compared co-flow and cyclic deposition/etch processes for the selective epitaxial growth of Si:P layers. High growth rates, relatively low resistivities and significant amounts of tensile strain (up to 10 nm min-1, 0.55 mOhm cm and a strain equivalent to 1.06% of substitutional C in Si:C layers) were obtained at 700 °C, 760 Torr with a co-flow approach and a SiH2Cl2 + PH3 + HCl chemistry. This approach was successfully used to thicken the sources and drains regions of n-type fin-shaped Field Effect Transistors. Meanwhile, the (Si2H6 + PH3/HCl + GeH4) CDE process evaluated yielded at 600 °C, 80 Torr even lower resistivities (0.4 mOhm cm, typically), at the cost however of the tensile strain which was lost due to (i) the incorporation of Ge atoms (1.5%, typically) into the lattice during the selective etch steps and (ii) a reduction by a factor of two of the P atomic concentration in CDE layers compared to that in layers grown in a single step (5 × 1020 cm-3 compared to 1021 cm-3).

Control of spectral transmission enhancement properties of random anti-reflecting surface structures fabricated using gold masking

NASA Astrophysics Data System (ADS)

Peltier, Abigail; Sapkota, Gopal; Potter, Matthew; Busse, Lynda E.; Frantz, Jesse A.; Shaw, L. Brandon; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.; Poutous, Menelaos K.

2017-02-01

Random anti-reflecting subwavelength surface structures (rARSS) have been shown to suppress Fresnel reflection and scatter from optical surfaces. The structures effectively function as a gradient-refractive-index at the substrate boundary, and the spectral transmission properties of the boundary have been shown to depend on the structure's statistical properties (diameter, height, and density.) We fabricated rARSS on fused silica substrates using gold masking. A thin layer of gold was deposited on the surface of the substrate and then subjected to a rapid thermal annealing (RTA) process at various temperatures. This RTA process resulted in the formation of gold "islands" on the surface of the substrate, which then acted as a mask while the substrate was dry etched in a reactive ion etching (RIE) process. The plasma etch yielded a fused silica surface covered with randomly arranged "rods" that act as the anti-reflective layer. We present data relating the physical characteristics of the gold "island" statistical populations, and the resulting rARSS "rod" population, as well as, optical scattering losses and spectral transmission properties of the final surfaces. We focus on comparing results between samples processed at different RTA temperatures, as well as samples fabricated without undergoing RTA, to relate fabrication process statistics to transmission enhancement values.

Measurement Model and Precision Analysis of Accelerometers for Maglev Vibration Isolation Platforms.

PubMed

Wu, Qianqian; Yue, Honghao; Liu, Rongqiang; Zhang, Xiaoyou; Ding, Liang; Liang, Tian; Deng, Zongquan

2015-08-14

High precision measurement of acceleration levels is required to allow active control for vibration isolation platforms. It is necessary to propose an accelerometer configuration measurement model that yields such a high measuring precision. In this paper, an accelerometer configuration to improve measurement accuracy is proposed. The corresponding calculation formulas of the angular acceleration were derived through theoretical analysis. A method is presented to minimize angular acceleration noise based on analysis of the root mean square noise of the angular acceleration. Moreover, the influence of installation position errors and accelerometer orientation errors on the calculation precision of the angular acceleration is studied. Comparisons of the output differences between the proposed configuration and the previous planar triangle configuration under the same installation errors are conducted by simulation. The simulation results show that installation errors have a relatively small impact on the calculation accuracy of the proposed configuration. To further verify the high calculation precision of the proposed configuration, experiments are carried out for both the proposed configuration and the planar triangle configuration. On the basis of the results of simulations and experiments, it can be concluded that the proposed configuration has higher angular acceleration calculation precision and can be applied to different platforms.

Measurement Model and Precision Analysis of Accelerometers for Maglev Vibration Isolation Platforms

PubMed Central

Wu, Qianqian; Yue, Honghao; Liu, Rongqiang; Zhang, Xiaoyou; Ding, Liang; Liang, Tian; Deng, Zongquan

2015-01-01

High precision measurement of acceleration levels is required to allow active control for vibration isolation platforms. It is necessary to propose an accelerometer configuration measurement model that yields such a high measuring precision. In this paper, an accelerometer configuration to improve measurement accuracy is proposed. The corresponding calculation formulas of the angular acceleration were derived through theoretical analysis. A method is presented to minimize angular acceleration noise based on analysis of the root mean square noise of the angular acceleration. Moreover, the influence of installation position errors and accelerometer orientation errors on the calculation precision of the angular acceleration is studied. Comparisons of the output differences between the proposed configuration and the previous planar triangle configuration under the same installation errors are conducted by simulation. The simulation results show that installation errors have a relatively small impact on the calculation accuracy of the proposed configuration. To further verify the high calculation precision of the proposed configuration, experiments are carried out for both the proposed configuration and the planar triangle configuration. On the basis of the results of simulations and experiments, it can be concluded that the proposed configuration has higher angular acceleration calculation precision and can be applied to different platforms. PMID:26287203

High-speed scanning ablation of dental hard tissues with a λ=9.3-μm CO2 laser: heat accumulation and peripheral thermal damage

NASA Astrophysics Data System (ADS)

Nguyen, Daniel; Staninec, Michal; Lee, Chulsung; Fried, Daniel

2010-02-01

A mechanically scanned CO2 laser operated at high laser pulse repetition rates can be used to rapidly and precisely remove dental decay. This study aims to determine whether these laser systems can safely ablate enamel and dentin without excessive heat accumulation and peripheral thermal damage. Peripheral thermal damage can adversely impact the mechanical strength of the irradiated tissue, particularly for dentin, and reduce the adhesion characteristics of the modified surfaces. Samples were derived from noncarious extracted molars. Pulpal temperatures were recorded using microthermocouples situated at the pulp chamber roof of samples (n=12), which were occlusally ablated using a rapid-scanning, water-cooled 300 Hz CO2 laser over a two minute time course. The mechanical strength of facially ablated dentin (n=10) was determined via four-point bend test and compared to control samples (n=10) prepared with 320 grit wet sand paper to simulate conventional preparations. Composite-to-enamel bond strength was measured via single-plane shear test for ablated/non-etched (n=10) and ablated/acid-etched (n=8) samples and compared to control samples (n=9) prepared by 320 grit wet sanding. Thermocouple measurements indicated that the temperature remained below ambient temperature at 19.0°C (s.d.=0.9) if water-cooling was used. There was no discoloration of either dentin and enamel, the treated surfaces were uniformly ablated and there were no cracks observable on the laser treated surfaces. Fourpoint bend tests yielded mean mechanical strengths of 18.2 N (s.d.=4.6) for ablated dentin and 18.1 N (s.d.=2.7) for control (p>0.05). Shear tests yielded mean bond strengths of 31.2 MPa (s.d.=2.5, p<0.01) for ablated/acid-etched samples, 5.2 MPa (s.d.=2.4, p<0.001) for ablated/non-etched samples, and 37.0 MPa (s.d.=3.6) for control. The results indicate that a rapid-scanning 300 Hz CO2 laser can effectively ablate dentin and enamel without excessive heat accumulation and with minimal thermal damage. It is not clear whether the small (16%) but statistically significant reduction in the shear bond strength to enamel is clinically significant since the mean shear bond strength exceeded 30 MPa.

Rollable nano-etched diffractive low-concentration PV sheets for small satelites

NASA Astrophysics Data System (ADS)

Brac-de-la-Perriere, Vincent; Kress, Bernard; Ben-Menahem, Shahar; Ishihara, Abraham K.; Dorais, Greg

2014-09-01

This paper discuses a novel, rollable, mass fabricable, low-concentration photovoltaic sheets for Cubesats providing them with efficient photoelectric conversion of sunlight and secondary diffuse light. The wrap consists of three thin (of order a millimeter or less), cheap plastic-sheet layers, which can be rolled together in a spiral wrapping configuration when stowed. Preliminary simulation based on the above modeling approaches show that the designs achieve comparable photovoltaic power (area for area) and (b) result in a at angular response curve which remains at from normal incidence of over 35 degrees to the normal. The simulation were performed using a ray tracing simulator built in Matlab. In addition, we have constructed a demonstrator using quartz wafers based on the optimized design to show the technology. Details of its fabrication are also provided.

Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors

NASA Astrophysics Data System (ADS)

Sohrabi, Mehdi

2017-11-01

A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors.

PubMed

Sohrabi, Mehdi

2017-11-01

A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

Particle shape effects on the fracture of discontinuously-reinforced 6061-A1 matrix composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, N.; Song, S.G.; Gray, G.T., III

1996-05-01

Effects on fracture and ductility of a spherical and an angular particulate-reinforced 6061-Al composite containing 20(vol)% Al{sub 2}O{sub 3} were studied using SEM fractography and modeled using finite element method (FEM). The spherical particulate composite exhibited a slightly lower yield strength and work hardening rate but a considerably higher ductility than the angular counterpart. SEM fractography showed that during tensile deformation the spherical composite failed through void nucleation and linking in the matrix near the reinforcement/matrix interface, whereas the angular composite failed through particle fracture and matrix ligament rupture. FEM results indicate that the distinction between the failure modes formore » these two composites can be attributed to differences in development of internal stresses and strains within the composites due to particle shape.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mattox, D.M.; Sharp, D.J.

A Veeco microetch system which uses a Kaufman type ion source has been used to study ion erosion yields for a variety of materials of possible interest in CTR wall coating applications. A schematic diagram of the Kaufman gun and etching chamber are given. The ion beam is nearly monoenergetic (within several eV). The extracted ion beam consists of a mixture of H/sub 2//sup +/ and H/sup +/. A H/sub 2//sup +/ ion will have a sputtering yield equivalent to 2H/sup +/ ions with one-half the energy of the H/sub 2//sup +/ ion. For most of these investigations, the chargemore » compensation filament is removed to avoid sputtering of the tungsten filament.« less

The Z {yields} cc-bar {yields} {gamma}{gamma}*, Z {yields} bb-bar {yields} {gamma}{gamma}* triangle diagrams and the Z {yields} {gamma}{psi}, Z {yields} {gamma}Y decays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Achasov, N. N., E-mail: achasov@math.nsc.ru

2011-03-15

The approach to the Z {yields} {gamma}{psi} and Z {yields} {gamma}Y decay study is presented in detail, based on the sum rules for the Z {yields} cc-bar {yields} {gamma}{gamma}* and Z {yields} bb-bar {yields} {gamma}{gamma}* amplitudes and their derivatives. The branching ratios of the Z {yields} {gamma}{psi} and Z {yields} {gamma}Y decays are calculated for different hypotheses on saturation of the sum rules. The lower bounds of {Sigma}{sub {psi}} BR(Z {yields} {gamma}{psi}) = 1.95 Multiplication-Sign 10{sup -7} and {Sigma}{sub {upsilon}} BR(Z {yields} {gamma}Y) = 7.23 Multiplication-Sign 10{sup -7} are found. Deviations from the lower bounds are discussed, including the possibilitymore » of BR(Z {yields} {gamma}J/{psi}(1S)) {approx} BR(Z {yields} {gamma}Y(1S)) {approx} 10{sup -6}, that could be probably measured in LHC. The angular distributions in the Z {yields} {gamma}{psi} and Z {yields} {gamma}Y decays are also calculated.« less

Spatial irregularities in Jupiter's upper ionosphere observed by Voyager radio occultations

NASA Technical Reports Server (NTRS)

Hinson, D. P.; Tyler, G. L.

1982-01-01

Radio scintillations (at 3.6 and 13 cm) produced by scattering from ionospheric irregularities during the Voyager occultations are interpreted using a weak-scattering theory. Least squares solutions for ionospheric parameters derived from the observed fluctuation spectra yield estimates of (1) the axial ratio, (2) angular orientation of the anisotropic irregularities, (3) the power law exponent of the spatial spectrum of irregularities, and (4) the magnitude of the spatial variations in electron density. It is shown that the measured angular orientation of the anisotropic irregularities indicates magnetic field direction and may provide a basis for refining Jovian magnetic field models.

Introducing etch kernels for efficient pattern sampling and etch bias prediction

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2018-01-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

Photoelectron yields of scintillation counters with embedded wavelength-shifting fibers read out with silicon photomultipliers

DOE PAGES

Artikov, Akram; Baranov, Vladimir; Blazey, Gerald C.; ...

2018-02-14

Photoelectron yields of extruded scintillation counters with titanium dioxide coating and embedded wavelength shifting fibers read out by silicon photomultipliers have been measured at the Fermilab Test Beam Facility using 120,GeV protons. The yields were measured as a function of transverse, longitudinal, and angular positions for a variety of scintillator compositions and reflective coating mixtures, fiber diameters, and photosensor sizes. Timing performance was also studied. These studies were carried out by the Cosmic Ray Veto Group of the Mu2e collaboration as part of their R\\&D program.

Photoelectron yields of scintillation counters with embedded wavelength-shifting fibers read out with silicon photomultipliers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Artikov, Akram; Baranov, Vladimir; Blazey, Gerald C.

Photoelectron yields of extruded scintillation counters with titanium dioxide coating and embedded wavelength shifting fibers read out by silicon photomultipliers have been measured at the Fermilab Test Beam Facility using 120,GeV protons. The yields were measured as a function of transverse, longitudinal, and angular positions for a variety of scintillator compositions and reflective coating mixtures, fiber diameters, and photosensor sizes. Timing performance was also studied. These studies were carried out by the Cosmic Ray Veto Group of the Mu2e collaboration as part of their R\\&D program.

Photoelectron yields of scintillation counters with embedded wavelength-shifting fibers read out with silicon photomultipliers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Artikov, Akram; Baranov, Vladimir; Blazey, Gerald C.

2018-05-01

Photoelectron yields of extruded scintillation counters with titanium dioxide coating and embedded wavelength shifting fibers read out by silicon photomultipliers have been measured at the Fermilab Test Beam Facility using 120\\,GeV protons. The yields were measured as a function of transverse, longitudinal, and angular positions for a variety of scintillator compositions and reflective coating mixtures, fiber diameters, and photosensor sizes. Timing performance was also studied. These studies were carried out by the Cosmic Ray Veto Group of the Mu2e collaboration as part of their R\\&D program.

Effect of laser and air abrasion pretreatment on the microleakage of a fissure sealant applied with conventional and self etch adhesives.

PubMed

Tirali, R E; Celik, C; Arhun, N; Berk, G; Cehreli, S B

2013-01-01

The purpose of this study was to investigate the effects of different pretreatment protocols along with different bonding agents on the microleakage of a fissure sealant material. A total of 144 freshly extracted noncarious human third molars were used The teeth were randomly assigned into three groups with respect to the pretreatment protocol employed: A. Air Abrasion B. Er,Cr:YSGG laser C. No pretreatment (Control). In each group specimens were further subjected to one of the following procedures before application of the sealant: 1. %36 Phosphoric acid-etch (AE) (DeTrey Conditioner 36/Denstply, UK) 2.AE+Prime&Bond NT (Dentsply, UK) 3. Clearfil S3 Bond (Kuraray, Japan) 4. Clearfil SE Bond (Kuraray, Japan). All teeth were sealed with the same fissure sealant material (Conseal F/SDI, Australia). Sealed teeth were further subjected to thermocycling, dye penetration test, sectioning and quantitative image analysis. Statistical evaluation of the microleakage data was performed with two way independent ANOVA and multiple comparisons test at p = 0.05. For qualitative evaluation 2 samples from each group were examined under Scanning Electron Microscopy. Microleakage was affected by both the type of pretreatment and the subsequent bonding protocols employed (p < 0.05). Overall, the highest (Mean = 0.36 mm) and lowest (Mean = 0.06 mm) microleakage values were observed in samples with unpretreated enamel sealed by S3+Conseal F and samples with laser pretreated enamel sealed by Acid Etch+Prime&-Bond+Conseal F protocols, respectively (p < 0.05). In the acid-etch group samples pretreated with laser yielded in slightly lower microleakage scores when compared with unpretreated samples and samples pretreated with air abrasion but the statistical significance was not important (p = 0,179). Similarly, when bonding agent is applied following acid-etching procedure, microleakage scores were not affected from pretreatment protocol (p = 0,615) (intact enamel/laser or air-abrasion). For both all-in one and two step self etch adhesive systems, unpretreated samples demonstrated the highest microleakage scores. For the groups in which bonding agent was utilized, pretreatments did not effected microleakage. Both the tested pretreatment protocols and adhesive procedures had different effects on the sealing properties of Conseal F in permanent tooth enamel.

Morphology of the Dentin-resin Interface yielded by Two-step Etch-and-rinse Adhesives with Different Solvents.

PubMed

Ferreira, João C; Pires, Patrícia T; de Azevedo, Álvaro F; Arantes-Oliveira, Sofia; Silva, Mário J; de Melo, Paulo R

2017-10-01

The study aimed to analyze the morphology of the dentin-resin interface yielded by two-step etch-and-rinse adhesive systems with different solvents and compositions. A total of 32 dentine disks were prepared and randomly assigned to four groups of one-bottle etch-and-rinse adhesive systems containing different solvents: group I, Adper Scotchbond-IXT™ (ethanol/water); group II, XP-Bond™ (tertiary butanol); group III, Prime and Bond NT ® (acetone); and group IV, One Coat bond® (5% water). Adhesive systems were applied onto dentin disks, which were then thermal cycled, divided into two hemi-disks (n = 16), and prepared for field-emission scanning electron microscopy to examine the dentin-resin interdiffusion zone. Microphotographs were scanned and data were processed. Data were compared with analysis of variance multivariant test after Kolmogorov-Smirnov and Shapiro-Wilk tests using Statistic Package for the Social Sciences. The adhesive layer thickness average found was group I: 45.9 ± 13.41 urn, group II: 20.6 ± 16.32 urn, group III: 17.7 ± 11.75 urn, and group IV: 50.7 ± 27.81 urn. Significant differences were found between groups I and IV and groups II and III (p < 0.000). Groups I (3.23 ± 0.53 μm) and II (3.13 ± 0.73 μm) yielded significantly thicker hybrid layers than groups III (2.53 ± 0.50 μm) and IV (1.84 ± 0.27 μm) (p < 0.003). Group III presented a less homogeneous hybrid layer, with some gaps. Tag length average was greater in groups II (111.0 ± 36.92 μm) and IV (128.9 ± 78.38 μm) than in groups I (61.5 ± 18.10 μm) and III (68.6 ± 15.84 μm) (p < 0.008). Adhesives systems with different solvents led to significant differences in the dentin-resin interface morphology. Solvents role in adhesives bond strength should be considered together with the other adhesive system components. The adhesive containing tertiary butanol, in addition, seems to originate a good-quality hybrid layer and long, entangled tags and also appears to have greater ability to originate microtags, which may indicate higher bond strength.

Neutron production from 40 GeV/c mixed proton/pion beam on copper, silver and lead targets in the angular range 30-135°

NASA Astrophysics Data System (ADS)

Agosteo, S.; Birattari, C.; Dimovasili, E.; Foglio Para, A.; Silari, M.; Ulrici, L.; Vincke, H.

2005-02-01

The neutron emission from 50 mm thick copper, silver and lead targets bombarded by a mixed proton/pion beam with momentum of 40 GeV/c were measured at the CERN Super Proton Synchrotron. The neutron yield and spectral fluence per incident particle on target were measured with an extended range Bonner sphere spectrometer in the angular range 30-135° with respect to the beam direction. Monte Carlo simulations with the FLUKA code were performed to provide a priori information for the unfolding of the experimental data. The spectral fluences show two peaks, an isotropic evaporation component centred at 3 MeV and a high-energy peak sitting around 100-150 MeV. The experimental neutron yields are given in four energy bins: <100 keV, 0.1-20 MeV, 20-500 MeV and 0.5-2 GeV. The total yields show a systematic discrepancy of 30-50%, with a peak of 70% at the largest angles, with respect to the results of the Monte Carlo simulations, which it is believed to be mainly due to uncertainties in the beam normalization factor. Analytic expressions are given for the variation of the integral yield as a function of emission angle and of target mass number.

Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

PubMed

Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2018-03-30

The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

Dielectrophoretic trapping of multilayer DNA origami nanostructures and DNA origami-induced local destruction of silicon dioxide.

PubMed

Shen, Boxuan; Linko, Veikko; Dietz, Hendrik; Toppari, J Jussi

2015-01-01

DNA origami is a widely used method for fabrication of custom-shaped nanostructures. However, to utilize such structures, one needs to controllably position them on nanoscale. Here we demonstrate how different types of 3D scaffolded multilayer origamis can be accurately anchored to lithographically fabricated nanoelectrodes on a silicon dioxide substrate by DEP. Straight brick-like origami structures, constructed both in square (SQL) and honeycomb lattices, as well as curved "C"-shaped and angular "L"-shaped origamis were trapped with nanoscale precision and single-structure accuracy. We show that the positioning and immobilization of all these structures can be realized with or without thiol-linkers. In general, structural deformations of the origami during the DEP trapping are highly dependent on the shape and the construction of the structure. The SQL brick turned out to be the most robust structure under the high DEP forces, and accordingly, its single-structure trapping yield was also highest. In addition, the electrical conductivity of single immobilized plain brick-like structures was characterized. The electrical measurements revealed that the conductivity is negligible (insulating behavior). However, we observed that the trapping process of the SQL brick equipped with thiol-linkers tended to induce an etched "nanocanyon" in the silicon dioxide substrate. The nanocanyon was formed exactly between the electrodes, that is, at the location of the DEP-trapped origami. The results show that the demonstrated DEP-trapping technique can be readily exploited in assembling and arranging complex multilayered origami geometries. In addition, DNA origamis could be utilized in DEP-assisted deformation of the substrates onto which they are attached. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon atom and cluster sputtering under low-energy noble gas plasma bombardment

NASA Astrophysics Data System (ADS)

Oyarzabal, E.; Doerner, R. P.; Shimada, M.; Tynan, G. R.

2008-08-01

Exit-angle resolved carbon atom and cluster (C2 and C3) sputtering yields are measured during different noble gas (Xe, Kr, Ar, Ne, and He) ion bombardments from a plasma, for low incident energies (75-225 eV). A quadrupole mass spectrometer (QMS) is used to detect the fraction of sputtered neutrals that is ionized in the plasma and to obtain the angular distribution by changing the angle between the target normal and the QMS aperture. A one-dimensional Monte Carlo code is used to simulate the interaction of the plasma and the sputtered particles in the region between the sample and the QMS. The effective elastic scattering cross sections of C, C2, and C3 with the different bombarding gas neutrals are obtained by varying the distance between the sample and the QMS and by performing a best fit of the simulation results to the experimental results. The total sputtering yield (C+C2+C3) for each bombarding gas is obtained from weight-loss measurements and the sputtering yield for C, C2, and C3 is then calculated from the integration of the measured angular distribution, taking into account the scattering and ionization of the sputtered particles between the sample and the QMS. We observe undercosine angular distributions of the sputtered atoms and clusters for all the studied bombarding gases and a clear decrease of the atom to cluster (C2 and C3) sputtering ratio as the incident ion mass increases, changing from a carbon atom preferential erosion for the lower incident ion masses (He, Ne, and Ar) to a cluster preferential erosion for the higher incident ion masses (Kr and Xe).

Dry etching of metallization

NASA Technical Reports Server (NTRS)

Bollinger, D.

1983-01-01

The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

Photoelectron angular distribution from free SiO2 nanoparticles as a probe of elastic electron scattering.

PubMed

Antonsson, E; Langer, B; Halfpap, I; Gottwald, J; Rühl, E

2017-06-28

In order to gain quantitative information on the surface composition of nanoparticles from X-ray photoelectron spectroscopy, a detailed understanding of photoelectron transport phenomena in these samples is needed. Theoretical results on the elastic and inelastic scattering have been reported, but a rigorous experimental verification is lacking. We report in this work on the photoelectron angular distribution from free SiO 2 nanoparticles (d = 122 ± 9 nm) after ionization by soft X-rays above the Si 2p and O 1s absorption edges, which gives insight into the relative importance of elastic and inelastic scattering channels in the sample particles. The photoelectron angular anisotropy is found to be lower for photoemission from SiO 2 nanoparticles than that expected from the theoretical values for the isolated Si and O atoms in the photoelectron kinetic energy range 20-380 eV. The reduced angular anisotropy is explained by elastic scattering of the outgoing photoelectrons from neighboring atoms, smearing out the atomic distribution. Photoelectron angular distributions yield detailed information on photoelectron elastic scattering processes allowing for a quantification of the number of elastic scattering events the photoelectrons have undergone prior to leaving the sample. The interpretation of the experimental photoelectron angular distributions is complemented by Monte Carlo simulations, which take inelastic and elastic photoelectron scattering into account using theoretical values for the scattering cross sections. The results of the simulations reproduce the experimental photoelectron angular distributions and provide further support for the assignment that elastic and inelastic electron scattering processes need to be considered.

Evaluation of the technical performance of three different commercial digital breast tomosynthesis systems in the clinical environment.

PubMed

Rodríguez-Ruiz, A; Castillo, M; Garayoa, J; Chevalier, M

2016-06-01

The aim of this work was to research and evaluate the performance of three different digital breast tomosynthesis (DBT) systems in the clinical environment (Siemens Mammomat Inspiration, Hologic Selenia Dimensions, and Fujifilm Amulet Innovality). The characterization included the study of the detector, the automatic exposure control, and the resolution of DBT projections and reconstructed planes. The modulation transfer function (MTF) of the DBT projections was measured with a 1mm thick steel edge, showing a strong anisotropy (30-40% lower MTF0.5 frequencies in the tube travel direction). The in-plane MTF0.5, measured with a 25μm tungsten wire, ranges from 1.3 to 1.8lp/mm in the tube-travel direction and between 2.4 and 3.7lp/mm in the chest wall-nipple. In the latter direction, the MTF peak shift is more emphasized for large angular range systems (2.0 versus 1.0lp/mm). In-depth resolution of the planes, via the full width at half maximum (FWHM) from the point spread function of a 25μm tungsten wire, is not only influenced by angular range and yields 1.3-4.6mm among systems. The artifact spread function from 1mm diameter tungsten beads depends mainly on angular range, yielding two tendencies whether large (FWHM is 4.5mm) or small (FWHM is 10mm) angular range is used. DBT delivers per scan a mean glandular dose between 1.4 and 2.7mGy for a 45mm thick polymethyl methacrylate (PMMA) block. In conclusion, we have identified and analysed specific metrics that can be used for quality assurance of DBT systems. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

PubMed

Ozer, Fusun; Blatz, Markus B

2013-01-01

Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

Angular Multigrid Preconditioner for Krylov-Based Solution Techniques Applied to the Sn Equations with Highly Forward-Peaked Scattering

NASA Astrophysics Data System (ADS)

Turcksin, Bruno; Ragusa, Jean C.; Morel, Jim E.

2012-01-01

It is well known that the diffusion synthetic acceleration (DSA) methods for the Sn equations become ineffective in the Fokker-Planck forward-peaked scattering limit. In response to this deficiency, Morel and Manteuffel (1991) developed an angular multigrid method for the 1-D Sn equations. This method is very effective, costing roughly twice as much as DSA per source iteration, and yielding a maximum spectral radius of approximately 0.6 in the Fokker-Planck limit. Pautz, Adams, and Morel (PAM) (1999) later generalized the angular multigrid to 2-D, but it was found that the method was unstable with sufficiently forward-peaked mappings between the angular grids. The method was stabilized via a filtering technique based on diffusion operators, but this filtering also degraded the effectiveness of the overall scheme. The spectral radius was not bounded away from unity in the Fokker-Planck limit, although the method remained more effective than DSA. The purpose of this article is to recast the multidimensional PAM angular multigrid method without the filtering as an Sn preconditioner and use it in conjunction with the Generalized Minimal RESidual (GMRES) Krylov method. The approach ensures stability and our computational results demonstrate that it is also significantly more efficient than an analogous DSA-preconditioned Krylov method.

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

NASA Technical Reports Server (NTRS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. Darren; Harper, D. Al; Jhabvala, Murzy D.;

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

NASA Technical Reports Server (NTRS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. Darren; Harper, D. Al; Jhabvala, Murzy D.

2002-01-01

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC 'Pop-up' Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

Line Mixing in Parallel and Perpendicular Bands of CO2: A Further Test of the Refined Robert-Bonamy Formalism

NASA Technical Reports Server (NTRS)

Boulet, C.; Ma, Qiancheng; Tipping, R. H.

2015-01-01

Starting from the refined Robert-Bonamy formalism [Q. Ma, C. Boulet, and R. H. Tipping, J. Chem. Phys. 139, 034305 (2013)], we propose here an extension of line mixing studies to infrared absorptions of linear polyatomic molecules having stretching and bending modes. The present formalism does not neglect the internal degrees of freedom of the perturbing molecules, contrary to the energy corrected sudden (ECS) modeling, and enables one to calculate the whole relaxation matrix starting from the potential energy surface. Meanwhile, similar to the ECS modeling, the present formalism properly accounts for roles played by all the internal angular momenta in the coupling process, including the vibrational angular momentum. The formalism has been applied to the important case of CO2 broadened by N2. Applications to two kinds of vibrational bands (sigma yields sigma and sigma yields pi) have shown that the present results are in good agreement with both experimental data and results derived from the ECS model.

The MAP Spacecraft Angular State Estimation After Sensor Failure

NASA Technical Reports Server (NTRS)

Bar-Itzhack, Itzhack Y.; Harman, Richard R.

2003-01-01

This work describes two algorithms for computing the angular rate and attitude in case of a gyro and a Star Tracker failure in the Microwave Anisotropy Probe (MAP) satellite, which was placed in the L2 parking point from where it collects data to determine the origin of the universe. The nature of the problem is described, two algorithms are suggested, an observability study is carried out and real MAP data are used to determine the merit of the algorithms. It is shown that one of the algorithms yields a good estimate of the rates but not of the attitude whereas the other algorithm yields a good estimate of the rate as well as two of the three attitude angles. The estimation of the third angle depends on the initial state estimate. There is a contradiction between this result and the outcome of the observability analysis. An explanation of this contradiction is given in the paper. Although this work treats a particular spacecraft, the conclusions have a far reaching consequence.

Satellite Angular Rate Estimation From Vector Measurements

NASA Technical Reports Server (NTRS)

Azor, Ruth; Bar-Itzhack, Itzhack Y.; Harman, Richard R.

1996-01-01

This paper presents an algorithm for estimating the angular rate vector of a satellite which is based on the time derivatives of vector measurements expressed in a reference and body coordinate. The computed derivatives are fed into a spacial Kalman filter which yields an estimate of the spacecraft angular velocity. The filter, named Extended Interlaced Kalman Filter (EIKF), is an extension of the Kalman filter which, although being linear, estimates the state of a nonlinear dynamic system. It consists of two or three parallel Kalman filters whose individual estimates are fed to one another and are considered as known inputs by the other parallel filter(s). The nonlinear dynamics stem from the nonlinear differential equation that describes the rotation of a three dimensional body. Initial results, using simulated data, and real Rossi X ray Timing Explorer (RXTE) data indicate that the algorithm is efficient and robust.

A study of GaN-based LED structure etching using inductively coupled plasma

NASA Astrophysics Data System (ADS)

Wang, Pei; Cao, Bin; Gan, Zhiyin; Liu, Sheng

2011-02-01

GaN as a wide band gap semiconductor has been employed to fabricate optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs). Recently several different dry etching techniques for GaN-based materials have been developed. ICP etching is attractive because of its superior plasma uniformity and strong controllability. Most previous reports emphasized on the ICP etching characteristics of single GaN film. In this study dry etching of GaN-based LED structure was performed by inductively coupled plasmas (ICP) etching with Cl2 as the base gas and BCl3 as the additive gas. The effects of the key process parameters such as etching gases flow rate, ICP power, RF power and chamber pressure on the etching properties of GaN-based LED structure including etching rate, selectivity, etched surface morphology and sidewall was investigated. Etch depths were measured using a depth profilometer and used to calculate the etch rates. The etch profiles were observed with a scanning electron microscope (SEM).

Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

PubMed

Timilsina, Rajendra; Rack, Philip D

2013-12-13

A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed.

Single mask, simple structure micro rotational motor driven by electrostatic comb-drive actuators

NASA Astrophysics Data System (ADS)

Pham, Phuc Hong; Viet Dao, Dzung; Dang, Lam Bao; Sugiyama, Susumu

2012-01-01

We report a design and fabrication of a new micro rotational motor (MRM) using silicon micromachining technology with the overall diameter of 2.4 mm. This motor utilizes four silicon electrostatic comb-drive actuators to drive the outer ring (or rotor) through ratchet teeth. The novel design of the anti-reverse structure helps us to overcome the gap problem after deep reactive ion etching of silicon. The MRM was fabricated by using silicon on insulator wafer with the thickness of the device layer being 30 µm and one mask only. The motor was successfully tested for performance. It was driven by periodic voltage with different frequencies ranging from 1 to 50 Hz. The angular velocity of the outer ratchet ring was proportional to the frequency. Moreover, when the driving frequency is lower than 30 Hz, the experiment results perfectly match the theoretical calculation.

Angular spectra of the intrinsic galaxy ellipticity field, their observability and their impact on lensing in tomographic surveys

NASA Astrophysics Data System (ADS)

Schäfer, Björn Malte; Merkel, Philipp M.

2017-09-01

This paper describes intrinsic ellipticity correlations between galaxies, their statistical properties, their observability with future surveys and their interference with weak gravitational lensing measurements. Using an angular-momentum-based, quadratic intrinsic alignment model we derive correlation functions of the ellipticity components and project them to yield the four non-zero angular ellipticity spectra C^ɛ _E(ℓ), C^ɛ _B(ℓ), C^ɛ _C(ℓ) and C^ɛ _S(ℓ) in their generalization to tomographic surveys. For a Euclid-like survey, these spectra would have amplitudes smaller than the weak lensing effect on non-linear structures, but would constitute an important systematics. Computing estimation biases for cosmological parameters derived from an alignment-contaminated survey suggests biases of +5σw for the dark energy equation of state parameter w, -20σ _{Ω _m} for the matter density Ωm and -12σ _{σ _8} for the spectrum normalization σ8. Intrinsic alignments yield a signal that is easily observable with a survey similar to Euclid: while not independent, significances for estimates of each of the four spectra reach values of tens of σ if weak lensing and shape noise are considered as noise sources, which suggests relative uncertainties on alignment parameters at the percent level, implying that galaxy alignment mechanisms can be investigated by future surveys.

Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

PubMed Central

Zhan, Zhan; Li, Wei; Yu, Lingke; Wang, Lingyun; Sun, Daoheng

2017-01-01

In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement. PMID:28772521

The influence of grating shape formation fluctuation on DFB laser diode threshold condition

NASA Astrophysics Data System (ADS)

Bao, Shiwei; Song, Qinghai; Xie, Chunmei

2018-03-01

Not only the grating material refractive index itself but also the Bragg grating physical shape formation affects the coupling strength greatly. The Bragg grating shape includes three factors, namely grating depth, duty ratio and grating angle. During the lithography and wet etching process, there always will be some fluctuation between the target and real grating shape formation after fabrication process. This grating shape fluctuation will affect the DFB coupling coefficient κ , and then consequently threshold current and corresponding wavelength. This paper studied the grating shape formation fluctuation influence to improve the DFB fabrication yield. A truncated normal random distribution fluctuation is considered in this paper. The simulation results conclude that it is better to choose relative thicker grating depth with lower refractive index to obtain a better fabrication tolerance, while not quite necessary to spend too much effort on improving lithography and wet etching process to get a precisely grating duty ratio and grating angle.

Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared

NASA Astrophysics Data System (ADS)

Rissanen, A.; Mannila, R.; Tuohiniemi, M.; Akujärvi, A.; Antila, J.

2014-03-01

This paper presents a novel MOEMS Fabry-Perot interferometer (FPI) process platform for the range of 800 - 1050 nm. Simulation results including design and optimization of device properties in terms of transmission peak width, tuning range and electrical properties are discussed. Process flow for the device fabrication is presented, with overall process integration and backend dicing steps resulting in successful fabrication yield. The mirrors of the FPI consist of LPCVD (low-pressure chemical vapor) deposited polySi-SiN λ/4-thin film Bragg reflectors, with the air gap formed by sacrificial SiO2 etching in HF vapor. Silicon substrate below the optical aperture is removed by inductively coupled plasma (ICP) etching to ensure transmission in the visible - near infra-red (NIR), which is below silicon transmission range. The characterized optical properties of the chips are compared to the simulated values. Achieved optical aperture diameter size enables utilization of the chips in both imaging as well as single-point spectral sensors.

The influence of grating shape formation fluctuation on DFB laser diode threshold condition

NASA Astrophysics Data System (ADS)

Bao, Shiwei; Song, Qinghai; Xie, Chunmei

2018-06-01

Not only the grating material refractive index itself but also the Bragg grating physical shape formation affects the coupling strength greatly. The Bragg grating shape includes three factors, namely grating depth, duty ratio and grating angle. During the lithography and wet etching process, there always will be some fluctuation between the target and real grating shape formation after fabrication process. This grating shape fluctuation will affect the DFB coupling coefficient κ, and then consequently threshold current and corresponding wavelength. This paper studied the grating shape formation fluctuation influence to improve the DFB fabrication yield. A truncated normal random distribution fluctuation is considered in this paper. The simulation results conclude that it is better to choose relative thicker grating depth with lower refractive index to obtain a better fabrication tolerance, while not quite necessary to spend too much effort on improving lithography and wet etching process to get a precisely grating duty ratio and grating angle.

An investigation into the effective surface passivation of quantum dots by a photo-assisted chemical method

NASA Astrophysics Data System (ADS)

Joo, So-Yeong; Park, Hyun-Su; Kim, Do-yeon; Kim, Bum-Sung; Lee, Chan Gi; Kim, Woo-Byoung

2018-01-01

In this study, we have developed an effective amino passivation process for quantum dots (QDs) at room temperature and have investigated a passivation mechanism using a photo-assisted chemical method. As a result of the reverse reaction of the H2O molecules, the etching kinetics of the photo-assisted chemical method increased upon increasing the 3-amino-1-propanol (APOL)/H2O ratio of the etching solution. Photon-excited electron-hole pairs lead to strong bonding between the organic and surface atoms of the QDs, and results in an increase of the quantum yield (QY%). This passivation method is also applicable to CdSe/ZnSe core/shell structures of QDs, due to the passivation of mid-gap defects states at the interface. The QY% of the as-synthesized CdSe QDs is dramatically enhanced by the amino passivation from 37% to 75% and the QY% of the CdSe/ZnSe core/shell QDs is also improved by ˜28%.

Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

PubMed

Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

2016-01-01

The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

PubMed

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

PubMed

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2016-04-01

The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

Fabrication of Buried Nanochannels From Nanowire Patterns

NASA Technical Reports Server (NTRS)

Choi, Daniel; Yang, Eui-Hyeok

2007-01-01

A method of fabricating channels having widths of tens of nanometers in silicon substrates and burying the channels under overlying layers of dielectric materials has been demonstrated. With further refinement, the method might be useful for fabricating nanochannels for manipulation and analysis of large biomolecules at single-molecule resolution. Unlike in prior methods, burying the channels does not involve bonding of flat wafers to the silicon substrates to cover exposed channels in the substrates. Instead, the formation and burying of the channels are accomplished in a more sophisticated process that is less vulnerable to defects in the substrates and less likely to result in clogging of, or leakage from, the channels. In this method, the first step is to establish the channel pattern by forming an array of sacrificial metal nanowires on an SiO2-on-Si substrate. In particular, the wire pattern is made by use of focused-ion-beam (FIB) lithography and a subsequent metallization/lift-off process. The pattern of metal nanowires is then transferred onto the SiO2 layer by reactive-ion etching, which yields sacrificial SiO2 nanowires covered by metal. After removal of the metal covering the SiO2 nanowires, what remains are SiO2 nanowires on an Si substrate. Plasma-enhanced chemical vapor deposition (PECVD) is used to form a layer of a dielectric material over the Si substrate and over the SiO2 wires on the surface of the substrate. FIB milling is then performed to form trenches at both ends of each SiO2 wire. The trenches serve as openings for the entry of chemicals that etch SiO2 much faster than they etch Si. Provided that the nanowires are not so long that the diffusion of the etching chemicals is blocked, the sacrificial SiO2 nanowires become etched out from between the dielectric material and the Si substrate, leaving buried channels. At the time of reporting the information for this article, channels 3 m long, 20 nm deep, and 80 nm wide (see figure) had been fabricated by this method.

On the competition of forces in the Kerr field

NASA Astrophysics Data System (ADS)

Semerak, O.

1994-11-01

'Rotosphere', where the component of 4-acceleration, radial relative to the symmetry axis, of the stationary observer depends on his angular velocity in a way going against our intuition, is demarcated in the Kerr spacetime. Stationary observers with extremal value of this acceleration ('extremelly accelerated observers') are introduced and their privileged relation to circular geodesics in the equatorial plane is found. Possible translation of the results into 'force' language is based on the definition of the 'centrifugal force' with respect to the zero-angular-momentum observers. It yields, in particular, a simple interpretation of the behavior of acceleration of the stationary observer in terms of gravitational, Coriolis and centrifugal forces.

Elbow kinematics during sit-to-stand and stand-to-sit movements.

PubMed

Packer, T L; Wyss, U P; Costigan, P A

1993-11-01

The sit-to-stand and stand-to-sit movements of 10 healthy women (mean age 52.4 years) were subjected to a descriptive analysis that yielded a definition of phases, determination of the peak angles reached, maximum angular velocity during each movement, and the sequencing of key events. While subjects showed little intrasubject variability, intersubject variability was evident. Subjects differed in the joint angles and angular velocity recorded, but the sequence of flexion/extension and rotation events were unchanged. Changes in direction of flexion/extension and rotation tended to occur very close in time, if not at the same time. Copyright © 1993. Published by Elsevier Ltd.

RosBREED: From genomics to DNA-informed breeding in strawberry

USDA-ARS?s Scientific Manuscript database

Angular leaf spot caused by Xanthomonas fragariae is the only major bacterial disease of cultivated strawberry (Fragaria ×ananassa). While this disease may cause reductions of up to 8 % of marketable yield in Florida winter annual production, no resistant cultivars have been commercialized. Wild acc...

On the Variation of Eta with Energy in the 100-1000 ev Region

DOE R&D Accomplishments Database

Wigner, E. P.

1949-11-01

Fluctuations in the fission yield in the 100- to 1000-ev region led to an investigation of the influencing variables. Changes in fission width from level to level and higher angular momentum phenomena are seen as possible explanations. (D.E.B.)

Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

NASA Astrophysics Data System (ADS)

Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

2015-03-01

Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

Aggressiveness of contemporary self-etching adhesives. Part II: etching effects on unground enamel.

PubMed

Pashley, D H; Tay, F R

2001-09-01

The aggressiveness of three self-etching adhesives on unground enamel was investigated. Ultrastructural features and microtensile bond strength were examined, first using these adhesives as both the etching and resin-infiltration components, and then examining their etching efficacy alone through substitution of the proprietary resins with the same control resins. For SEM examination, buccal, mid-coronal, unground enamel from human extracted bicuspids were etched with either Clearfil Mega Bond (Kuraray), Non-Rinse Conditioner (NRC; Dentsply DeTrey) or Prompt L-Pop (ESPE). Those in the control group were etched with 32% phosphoric acid (Bisco) for 15s. They were all rinsed off prior to examination of the etching efficacy. For TEM examination, the self-etching adhesives were used as recommended. Unground enamel treated with NRC were further bonded using Prime&Bond NT (Dentsply), while those in the etched, control group were bonded using All-Bond 2 (Bisco). Completely demineralized, resin replicas were embedded in epoxy resin for examination of the extent of resin infiltration. For microtensile bond strength evaluation, specimens were first etched and bonded using the self-etching adhesives. A second group of specimens were etched with the self-etching adhesives, rinsed but bonded using a control adhesive. Following restoration with Z100 (3M Dental Products), they were sectioned into beams of uniform cross-sectional areas and stressed to failure. Etching patterns of aprismatic enamel, as revealed by SEM, and the subsurface hybrid layer morphology, as revealed by TEM, varied according to the aggressiveness of the self-etching adhesives. Clearfil Mega Bond exhibited the mildest etching patterns, while Prompt L-Pop produced an etching effect that approached that of the total-etch control group. Microtensile bond strength of the three experimental groups were all significantly lower than the control group, but not different from one another. When the self-etching adhesives were replaced with the control adhesive after etching, bond strengths of NRC/Prime&Bond NT and Prompt L-Pop were not significantly different from that of the control group, but were significantly higher than that of Clearfil Mega Bond. Both etching efficacy and strength of the resins are important contributing factors in bonding of self-etching adhesives to unground enamel.

Large-scale and highly efficient synthesis of micro- and nano-fibers with controlled fiber morphology by centrifugal jet spinning for tissue regeneration

NASA Astrophysics Data System (ADS)

Ren, Liyun; Pandit, Vaibhav; Elkin, Joshua; Denman, Tyler; Cooper, James A.; Kotha, Shiva P.

2013-02-01

PLLA fibrous tissue scaffolds with controlled fiber nanoscale surface roughness are fabricated with a novel centrifugal jet spinning process. The centrifugal jet spinning technique is a highly efficient synthesis method for micron- to nano-sized fibers with a production rate up to 0.5 g min-1. During the centrifugal jet spinning process, a polymer solution jet is stretched by the centrifugal force of a rotating chamber. By engineering the rheological properties of the polymer solution, solvent evaporation rate and centrifugal force that are applied on the solution jet, polyvinylpyrrolidone (PVP) and poly(l-lactic acid) (PLLA) composite fibers with various diameters are fabricated. Viscosity measurements of polymer solutions allowed us to determine critical polymer chain entanglement limits that allow the generation of continuous fiber as opposed to beads or beaded fibers. Above a critical concentration at which polymer chains are partially or fully entangled, lower polymer concentrations and higher centrifugal forces resulted in thinner fibers. Etching of PVP from the PLLA-PVP composite fibers doped with increasing PVP concentrations yielded PLLA fibers with increasing nano-scale surface roughness and porosity, which increased the fiber hydrophilicity dramatically. Scanning electron micrographs of the etched composite fibers suggest that PVP and PLLA were co-contiguously phase separated within the composite fibers during spinning and nano-scale roughness features were created after the partial etching of PVP. To study the tissue regeneration efficacy of the engineered PLLA fiber matrix, human dermal fibroblasts are used to simulate partial skin graft. Fibers with increased PLLA surface roughness and porosity demonstrated a trend towards higher cell attachment and proliferation.PLLA fibrous tissue scaffolds with controlled fiber nanoscale surface roughness are fabricated with a novel centrifugal jet spinning process. The centrifugal jet spinning technique is a highly efficient synthesis method for micron- to nano-sized fibers with a production rate up to 0.5 g min-1. During the centrifugal jet spinning process, a polymer solution jet is stretched by the centrifugal force of a rotating chamber. By engineering the rheological properties of the polymer solution, solvent evaporation rate and centrifugal force that are applied on the solution jet, polyvinylpyrrolidone (PVP) and poly(l-lactic acid) (PLLA) composite fibers with various diameters are fabricated. Viscosity measurements of polymer solutions allowed us to determine critical polymer chain entanglement limits that allow the generation of continuous fiber as opposed to beads or beaded fibers. Above a critical concentration at which polymer chains are partially or fully entangled, lower polymer concentrations and higher centrifugal forces resulted in thinner fibers. Etching of PVP from the PLLA-PVP composite fibers doped with increasing PVP concentrations yielded PLLA fibers with increasing nano-scale surface roughness and porosity, which increased the fiber hydrophilicity dramatically. Scanning electron micrographs of the etched composite fibers suggest that PVP and PLLA were co-contiguously phase separated within the composite fibers during spinning and nano-scale roughness features were created after the partial etching of PVP. To study the tissue regeneration efficacy of the engineered PLLA fiber matrix, human dermal fibroblasts are used to simulate partial skin graft. Fibers with increased PLLA surface roughness and porosity demonstrated a trend towards higher cell attachment and proliferation. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr33423f

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Lee, Jaesoong; Ni, Xianfeng; Leach, Jacob; Özgür, Ümit; Morkoç, Hadis

2011-02-01

The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl2/Ar/SiCl4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power and the flow rate of Cl2 gas were modified during the experiments. The window region, wing region and the edge region of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.

Temperature-Dependent Nanofabrication on Silicon by Friction-Induced Selective Etching.

PubMed

Jin, Chenning; Yu, Bingjun; Xiao, Chen; Chen, Lei; Qian, Linmao

2016-12-01

Friction-induced selective etching provides a convenient and practical way for fabricating protrusive nanostructures. A further understanding of this method is very important for establishing a controllable nanofabrication process. In this study, the effect of etching temperature on the formation of protrusive hillocks and surface properties of the etched silicon surface was investigated. It is found that the height of the hillock produced by selective etching increases with the etching temperature before the collapse of the hillock. The temperature-dependent selective etching rate can be fitted well by the Arrhenius equation. The etching at higher temperature can cause rougher silicon surface with a little lower elastic modulus and hardness. The contact angle of the etched silicon surface decreases with the etching temperature. It is also noted that no obvious contamination can be detected on silicon surface after etching at different temperatures. As a result, the optimized condition for the selective etching was addressed. The present study provides a new insight into the control and application of friction-induced selective nanofabrication.

Laser patterning of laminated structures for electroplating

DOEpatents

Mayer, Steven T.; Evans, Leland B.

1993-01-01

A process for laser patterning of a substrate so that it can be subsequently electroplated or electrolessly plated. The process utilizes a laser to treat an inactive (inert) layer formed over an active layer to either combine or remove the inactive layer to produce a patterned active layer on which electrodeposition can occur. The process is carried out by utilizing laser alloying and laser etching, and involves only a few relatively high yield steps and can be performed on a very small scale.

Laser patterning of laminated structures for electroplating

DOEpatents

Mayer, S.T.; Evans, L.B.

1993-11-23

A process for laser patterning of a substrate so that it can be subsequently electroplated or electrolessly plated. The process utilizes a laser to treat an inactive (inert) layer formed over an active layer to either combine or remove the inactive layer to produce a patterned active layer on which electrodeposition can occur. The process is carried out by utilizing laser alloying and laser etching, and involves only a few relatively high yield steps and can be performed on a very small scale. 9 figures.

A study of trends and techniques for space base electronics

NASA Technical Reports Server (NTRS)

Trotter, J. D.; Wade, T. E.; Gassaway, J. D.

1978-01-01

Furnaces and photolithography related equipment were applied to experiments on double layer metal. The double layer metal activity emphasized wet chemistry techniques. By incorporating the following techniques: (1) ultrasonic etching of the vias; (2) premetal clean using a modified buffered hydrogen fluoride; (3) phosphorus doped vapor; and (4) extended sintering, yields of 98 percent were obtained using the standard test pattern. The two dimensional modeling problems have stemmed from, alternately, instability and too much computation time to achieve convergence.

Chalcogenide Materials Fabrication and Initial Characterization for Reconfigurable Interconnect Technology

DTIC Science & Technology

2006-10-01

The oxide has lower values of (n, k) than Ge2Sb2Te5, and can be etched by hydrofluoric acid or water. No change in the optical constants of the...system. Spin densities were estimated by comparison with a standard sample ( weak pitch). Details are available elsewhere [15]. Both x-ray and x...121Sb and 123Sb are 588A = G, G and G, G, respectively [17]. The simulation yields broad features near 2300 and 4400 G, which are too weak in

Strong modification of photoluminescence in erbium-doped porous silicon microcavities

NASA Astrophysics Data System (ADS)

Zhou, Y.; Snow, P. A.; Russell, P. St. J.

2000-10-01

A microcavity composed of porous silicon multilayer mirrors was electrochemically etched and doped with erbium. Measurements of the reflectivity and photoluminescence spectra are presented. Thermal processing under a nitrogen atmosphere optically activated the erbium ions. Photopumping yielded room temperature emission around 1.54 μm from the erbium-doped samples with the emitted light strongly modified by the microcavity structure. Emission spectra with a peak at 1.536 μm had a full width at half maximum of ˜6 nm.

Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist

NASA Astrophysics Data System (ADS)

Mueller, Mark; Komarov, Serguie; Baik, Ki-Ho

2002-07-01

Photo mask etching for the 100nm technology node places new requirements on dry etching processes. As the minimum-size features on the mask, such as assist bars and optical proximity correction (OPC) patterns, shrink down to 100nm, it is necessary to produce etch CD biases of below 20nm in order to reproduce minimum resist features into chrome with good pattern fidelity. In addition, vertical profiles are necessary. In previous generations of photomask technology, footing and sidewall profile slope were tolerated, since this dry etch profile was an improvement from wet etching. However, as feature sizes shrink, it is extremely important to select etch processes which do not generate a foot, because this will affect etch linearity and also limit the smallest etched feature size. Chemically amplified resist (CAR) from TOK is patterned with a 50keV MEBES eXara e-beam writer, allowing for patterning of small features with vertical resist profiles. This resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. Chrome etch process development has been performed using Design of Experiments to optimize parameters such as sidewall profile, etch CD bias, etch CD linearity for varying sizes of line/space patterns, etch CD linearity for varying sizes of isolated lines and spaces, loading effects, and application to contact etching.

Wetting characteristic of ceramic to water and adhesive resin.

PubMed

Oh, Won-Suck; Shen, Chiayi; Alegre, Brandon; Anusavice, Kenneth J

2002-12-01

Maximum wetting of ceramic by adhesive resin is required to achieve optimal adhesion of the resin to ceramic. It is unknown whether the adhesion of the resin to the ceramic is affected by the surface topography and wetting by water or the adhesive resin. This study was designed to characterize the effect of surface topography on the wetting of ceramics by water and adhesive resin. Three materials, a veneering ceramic, Eris (ERV), and 2 core ceramics, Empress 1 core ceramic (E1C) and an experimental core ceramic (EXC), were used. Four surface-roughening procedures were used. They included polishing through 1200-grit SiC paper (P), air abrasion with 50 microm Al(2)O(3) (A), etching with 5% hydrofluoric acid gel (E), and a combination of airborne particle abrasion and etching (A/E). Forty bar specimens (15 x 10 x 1.5 mm) were prepared from each material (N=120). Twelve groups of 10 specimens each were prepared for the 4 surface-roughening procedures. Advancing (theta(A)) and receding (theta(R)) contact angles were measured with a CAHN Dynamic Contact Analyzer, on the basis of the Wilhelmy plate technique, with water and adhesive resin. The work of adhesion (W(A)) by the probing media was calculated by use of advancing contact angle data. The data were analyzed by t testing, analysis of variance, and Duncan's tests (alpha=0.05) to determine the statistical significance of differences in the contact angles between ceramic and water or resin as a function of surface roughening. In general, the mean theta(A) values were higher than the mean theta(R) values except for groups of E or A/E specimens with water used as a probing medium. E and A/E treatments yielded the lowest contact angle values, followed by A and P treatments (P<.001). The E1C exhibited the highest mean contact angles, whereas EXC exhibited the lowest mean contact angle except for the theta(R) with resin. The corresponding values for ERV were between those of E1C and EXC except for theta(R) values with resin. The resin medium yielded higher mean contact angles than the water medium for the same surfaces. W(A) ranged from 62.9 to 145.2 mJ/m(2). Within the limitations of this study, etching or a combination of air abrasion and etching were comparably effective in increasing the surface area for bonding. The most wettable surface as measured by the resin medium was EXC, followed by ERV and E1C.

The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

PubMed

Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

2016-01-01

The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

Tables of Transition Probabilities and Branching Ratios for Electric Dipole Transitions Between Arbitrary Levels of Hydrogen-Like Atoms

NASA Technical Reports Server (NTRS)

Omidvar, K.

1980-01-01

Branching ratios in hydrogen-like atoms due to electric-dipole transitions are tabulated for the initial principal and angular momentum quantum number n, lambda, and final principal and angular momentum quantum numbers n, lambda. In table 1, transition probabilities are given for transitions n, lambda, yields n, where sums have been made with respect to lambda. In this table, 2 or = n' or = 10, o or = lambda' or = n'-1, and 1 or = n or = n'-1. In addition, averages with respect to lambda' and sums with respect to n, and lifetimes are given. In table 2, branching ratios are given for transitions n' lambda' yields ni, where sums have been made with respect to lambda. In these tables, 2 or = n' or = 10, 0 or = lambda', n'-1, and 1 or = n or = n'-1. Averages with respect to lambda' are also given. In table 3, branching ratios are given for transitions n' lambda' yields in lambda, where 1 or = n or = 5, 0 or = lambda or = n-1, n n' or = 15, and 0 or = lambda' or = n(s), where n(s), is the smaller of the two numbers n'-1 and 6. Averages with respect to lambda' are given.

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

NASA Astrophysics Data System (ADS)

Li, Kun-Dar; Miao, Jin-Ru

2018-02-01

To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, <100> and <111> preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Phase Analysis of Laser Direct Etching and Water Assisted Laser Combined Etching of SiC Ceramics

NASA Astrophysics Data System (ADS)

Yuan, Genfu; Cong, Qidong; Zhang, Chen; Xie, Bingbing

2017-12-01

In this study, to discover the etching mechanism of SiC ceramics under laser direct etching and water-jet assisted laser combined etching, the phenomena of substance change on the etched surface were investigated. Also, the rules of substance transfer in etching are discussed. The elemental content change and the phase change of the etching products on the etched surface were analyzed by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD), respectively. These studies showed a high amount of carbon black on the etched surface, because of the decomposition of SiC ceramics under the high-power-density laser irradiation. SiC decomposed to Si under the laser irradiation, and the subsequent chemical reaction of Si and O2 easily produced SiO2. The SiO2 on the etched surface melted and vaporized, whereas most of SiO2 was removed through splashing, changing the chemical composition of the etched surface. Following the water jet introduction, an increased amount of O existed on the combined etching surface, because the chemical reaction of SiC and H2O easily produced SiO2 under the high-power-density laser irradiation.

Introduction of pre-etch deposition techniques in EUV patterning

NASA Astrophysics Data System (ADS)

Xiang, Xun; Beique, Genevieve; Sun, Lei; Labonte, Andre; Labelle, Catherine; Nagabhirava, Bhaskar; Friddle, Phil; Schmitz, Stefan; Goss, Michael; Metzler, Dominik; Arnold, John

2018-04-01

The thin nature of EUV (Extreme Ultraviolet) resist has posed significant challenges for etch processes. In particular, EUV patterning combined with conventional etch approaches suffers from loss of pattern fidelity in the form of line breaks. A typical conventional etch approach prevents the etch process from having sufficient resist margin to control the trench CD (Critical Dimension), minimize the LWR (Line Width Roughness), LER (Line Edge Roughness) and reduce the T2T (Tip-to-Tip). Pre-etch deposition increases the resist budget by adding additional material to the resist layer, thus enabling the etch process to explore a wider set of process parameters to achieve better pattern fidelity. Preliminary tests with pre-etch deposition resulted in blocked isolated trenches. In order to mitigate these effects, a cyclic deposition and etch technique is proposed. With optimization of deposition and etch cycle time as well as total number of cycles, it is possible to open the underlying layers with a beneficial over etch and simultaneously keep the isolated trenches open. This study compares the impact of no pre-etch deposition, one time deposition and cyclic deposition/etch techniques on 4 aspects: resist budget, isolated trench open, LWR/LER and T2T.

Antiproton--neutron bound state

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ju, I.; Tomozawa, Y.

1972-08-01

The possibility of an antiproton-neutron bound state for explaining a narrow peak which was found recently in the experiment p + n yields 4 pi and 6 pi is discussed. It is pointed out that the state is likely to be a /sup 1/P/ sub 1/ state or a higher angular momentum state. (auth)

Influence of water storage on fatigue strength of self-etch adhesives.

PubMed

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Scheidel, Donal D; Watanabe, Hidehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2015-12-01

The purpose of this study was to determine enamel and dentin bond durability after long-term water storage using self-etch adhesives. Two single step self-etch adhesives (SU, Scotchbond Universal and GB, G-ӕnial Bond) and a two-step self-etch adhesive (OX, OptiBond XTR) were used. The shear bond strength (SBS) and shear fatigue strength (FS) of the enamel and dentin were obtained with and without phosphoric acid pre-etching prior to application of the adhesives. The specimens were stored in distilled water at 37 °C for 24 h, 6 months, and one year. A staircase method was used to determine the FS using a frequency of 10 Hz for 50,000 cycles or until failure occurred. The SBS and FS of enamel bonds were significantly higher with pre-etching, when compared to no pre-etching for the same water storage period. The FS of dentin bonds with pre-etching tended to decrease relative to no pre-etching at the same storage period. For the one year storage period, SU and GB with pre-etching showed significantly lower FS values than the groups without pre-etching. The influence of water storage on FS of the self-etch adhesives was dependent on the adhesive material, storage period and phosphoric acid pre-etching of the bonding site. Phosphoric acid pre-etching of enamel improves the effectiveness of self-etch adhesive systems. Inadvertent contact of phosphoric acid on dentin appears to reduce the ability of self-etch adhesives to effectively bond resin composite materials. Copyright © 2015 Elsevier Ltd. All rights reserved.

Depth of Etch Comparison Between Self-limiting and Traditional Etchant Systems

DTIC Science & Technology

2016-06-18

two different etchants (Ultradent’s Opal Etch 35%, a self-limiting phosphoric acid, or 34% Tooth Conditioning Gel by Dentsply) at varied time... Opal versus Dentsply and there was also a significant difference between etch time. There is no significant difference between the interaction of...etch material and etch time. Conclusion: The depth of etch of Opal etchant was consistently less than Dentsply etchant but continued to etch and

ThermoYield actuators: nano-adjustable set-and-forget optics mounts

NASA Astrophysics Data System (ADS)

DeTienne, Michael D.; Bruccoleri, Alexander R.; Chalifoux, Brandon; Heilmann, Ralf K.; Tedesco, Ross E.; Schattenburg, Mark L.

2017-08-01

The X-ray optics community has been developing technology for high angular resolution, large collecting area X-ray telescopes such as the Lynx X-ray telescope concept. To meet the high collecting area requirements of such telescope concepts, research is being conducted on thin, segmented optics. The mounts that fixture and align segmented optics must be the correct length to sub-micron accuracy to satisfy the angular resolution goals of such a concept. Set-andforget adjustable length optical mounting posts have been developed to meet this need. The actuator consists of a cylinder made of metal. Halfway up the height of the metal cylinder, a reduced diameter cylindrical neck is cut. To change the length of this actuator, an axial compressive or tensile force is applied to the actuator. A high-current electrical pulse is sent through the actuator, and this electrical current resistively heats the neck of the actuator. This heating temporarily reduces the yield strength of the neck, so that the applied force plastically deforms the neck. Once the current stops and the neck cools, the neck will regain yield strength, and the plastic deformation will stop. All of the plastic deformation that occurred during heating is now permanent. Both compression and expansion of these actuators has been demonstrated in steps ranging from 6 nanometers to several microns. This paper will explain the concept of ThermoYield actuation, explore X-ray telescope applications, describe an experimental setup, show and discuss data, and propose future ideas.

Effect of Reduced Phosphoric Acid Pre-etching Times 
on Enamel Surface Characteristics and Shear Fatigue Strength Using Universal Adhesives.

PubMed

Tsujimoto, Akimasa; Fischer, Nicholas; Barkmeier, Wayne; Baruth, Andrew; Takamizawa, Toshiki; Latta, Mark; Miyazaki, Masashi

2017-01-01

To examine the effect of reduced phosphoric acid pre-etching times on enamel fatigue bond strength of universal adhesives and surface characteristics by using atomic force microscopy (AFM). Three universal adhesives were used in this study (Clearfil Universal Bond [C], G-Premio Bond [GP], Scotchbond Universal Adhesive [SU]). Four pre-etching groups were employed: enamel pre-etched with phosphoric acid and immediately rinsed with an air-water spray, and enamel pre-etched with phosphoric acid for 5, 10, or 15 s. Ground enamel was used as the control group. For the initial bond strength test, 15 specimens per etching group for each adhesive were used. For the shear fatigue test, 20 specimens per etching group for each adhesive were loaded using a sine wave at a frequency of 20 Hz for 50,000 cycles or until failure occurred. Initial shear bond strengths and fatigue shear strengths of composite adhesively bonded to ground and pre-etched enamel were determined. AFM observations of ground and pre-etched enamel were also conducted, and surface roughness as well as surface area were evaluated. The initial shear bond strengths and fatigue shear strengths of the universal adhesives in the pre-etched groups were significantly higher than those of the control group, and were not influenced by the pre-etching time. Significantly higher surface roughness and surface area of enamel surfaces in pre-etched groups were observed compared with those in the control group. While the surface area was not significantly influenced by etching time, surface roughness of the enamel surfaces in the pre-etched groups significantly increased with pre-etching time. The results of this in vitro study suggest that reduced phosphoric acid pre-etching times do not impair the fatigue bond strength of universal adhesives. Although fatigue bond strength and surface area were not influenced by phosphoric-acid etching times, surface roughness increased with increasing etching time.

Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells

PubMed Central

Hüpkes, Jürgen; Owen, Jorj I; Pust, Sascha E; Bunte, Eerke

2012-01-01

Abstract Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided. PMID:22162035

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

PubMed

Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

2018-04-27

Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

Influence of different etching modes on bond strength and fatigue strength to dentin using universal adhesive systems.

PubMed

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Berry, Thomas P; Watanabe, Hedehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2016-02-01

The purpose of this study was to determine the dentin bonding ability of three new universal adhesive systems under different etching modes using fatigue testing. Prime & Bond elect [PE] (DENTSPLY Caulk), Scotchbond Universal [SU] (3M ESPE), and All Bond Universal [AU] (Bisco) were used in this study. A conventional single-step self-etch adhesive, Clearfil Bond SE ONE [CS] (Kuraray Noritake Dental) was also included as a control. Shear bond strengths (SBS) and shear fatigue strength (SFS) to human dentin were obtained in the total-etch mode and self-etch modes. For each test condition, 15 specimens were prepared for the SBS and 30 specimens for SFS. SEM was used to examine representative de-bonded specimens, treated dentin surfaces and the resin/dentin interface for each test condition. Among the universal adhesives, PE in total-etch mode showed significantly higher SBS and SFS values than in self-etch mode. SU and AU did not show any significant difference in SBS and SFS between the total-etch mode and self-etch mode. However, the single-step self-etch adhesive CS showed significantly lower SBS and SFS values in the etch-and-rinse mode when compared to the self-etch mode. Examining the ratio of SFS/SBS, for PE and AU, the etch-and-rinse mode groups showed higher ratios than the self-etch mode groups. The influence of different etching modes on dentin bond quality of universal adhesives was dependent on the adhesive material. However, for the universal adhesives, using the total-etch mode did not have a negative impact on dentin bond quality. Copyright © 2015 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO2 plasma etching

NASA Astrophysics Data System (ADS)

Chapman, Glenn H.; Tu, Yuqiang; Peng, Jun

2004-01-01

Bi/In thermal resist is a bilayer structure of Bi over In films which can be exposed by laser with a wide range of wavelengths and can be developed by diluted RCA2 solutions. Current research shows bimetallic resist can work as etch masking layer for both dry plasma etching and wet anisotropic etching. It can act as both patterning and masking layers for Si and SiO2 with plasma "dry" etch using CF4/CHF3. The etching condition is CF4 flow rate 50 sccm, pressure 150 mTorr, and RF power 100 - 600W. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1 nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In. Bi/In also creates etch masking layers for alkaline-based (KOH, TMAH and EDP) "wet" anisotropic bulk Si etch without the need of SiO2 masking steps. The laser exposed Bi/In etches two times more slowly than SiO2. Experiment result shows that single metal Indium film exhibits thermal resist characteristics but at twice the exposure levels. It can be developed in diluted RCA2 solution and used as an etch mask layer for Si anisotropic etch. X-ray diffraction analysis shows that laser exposure causes both Bi and In single film to oxidize. In film may become amorphous when exposed to high laser power.

Pattern sampling for etch model calibration

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2017-06-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels as well as the choice of calibration patterns is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels -"internal, external, curvature, Gaussian, z_profile" - designed to capture the finest details of the resist contours and represent precisely any etch bias. By evaluating the etch kernels on various structures it is possible to map their etch signatures in a multi-dimensional space and analyze them to find an optimal sampling of structures to train an etch model. The method was specifically applied to a contact layer containing many different geometries and was used to successfully select appropriate calibration structures. The proposed kernels evaluated on these structures were combined to train an etch model significantly better than the standard one. We also illustrate the usage of the specific kernel "z_profile" which adds a third dimension to the description of the resist profile.

Copper-assisted, anti-reflection etching of silicon surfaces

DOEpatents

Toor, Fatima; Branz, Howard

2014-08-26

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

A review on plasma-etch-process induced damage of HgCdTe

NASA Astrophysics Data System (ADS)

Liu, Lingfeng; Chen, Yiyu; Ye, Zhenhua; Ding, Ruijun

2018-05-01

Dry etching techniques with minimal etch induced damage are required to develop highly anisotropic etch for pixel delineation of HgCdTe infrared focal plane arrays (IRFPAs). High density plasma process has become the main etching technique for HgCdTe in the past twenty years, In this paper, high density plasma electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) etching of HgCdTe are summarized. Common plasma-etch-process induced type conversion and related mechanisms are reviewed particularly.

Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl{sup +} and Br{sup +} ion incidence in the presence of Cl and Br neutrals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakazaki, Nobuya, E-mail: nakazaki.nobuya.58x@st.kyoto-u.ac.jp; Takao, Yoshinori; Eriguchi, Koji

Classical molecular dynamics (MD) simulations have been performed for Cl{sup +} and Br{sup +} ions incident on Si(100) surfaces with Cl and Br neutrals, respectively, to gain a better understanding of the ion-enhanced surface reaction kinetics during Si etching in Cl- and Br-based plasmas. The ions were incident normally on surfaces with translational energies in the range E{sub i} = 20–500 eV, and low-energy neutrals of E{sub n} = 0.01 eV were also incident normally thereon with the neutral-to-ion flux ratio in the range Γ{sub n}{sup 0}/Γ{sub i}{sup 0} = 0–100, where an improved Stillinger--Weber potential form was employed for the interatomic potential concerned. The etch yieldsmore » and thresholds presently simulated were in agreement with the experimental results previously reported for Si etching in Cl{sub 2} and Br{sub 2} plasmas as well as in Cl{sup +}, Cl{sub 2}{sup +}, and Br{sup +} beams, and the product stoichiometry simulated was consistent with that observed during Ar{sup +} beam incidence on Si in Cl{sub 2}. Moreover, the surface coverage of halogen atoms, halogenated layer thickness, surface stoichiometry, and depth profile of surface products simulated for Γ{sub n}{sup 0}/Γ{sub i}{sup 0} = 100 were in excellent agreement with the observations depending on E{sub i} reported for Si etching in Cl{sub 2} plasmas. The MD also indicated that the yield, coverage, and surface layer thickness are smaller in Si/Br than in Si/Cl system, while the percentage of higher halogenated species in product and surface stoichiometries is larger in Si/Br. The MD further indicated that in both systems, the translational energy distributions of products and halogen adsorbates desorbed from surfaces are approximated by two Maxwellians of temperature T{sub 1} ≈ 2500 K and T{sub 2} ≈ 7000–40 000 K. These energy distributions are discussed in terms of the desorption or evaporation from hot spots formed through chemically enhanced physical sputtering and physically enhanced chemical sputtering, which have so far been speculated to both occur in the ion-enhanced surface reaction kinetics of plasma etching.« less

Thermodynamics of nuclear track chemical etching

NASA Astrophysics Data System (ADS)

Rana, Mukhtar Ahmed

2018-05-01

This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

High rate dry etching of InGaZnO by BCl3/O2 plasma

NASA Astrophysics Data System (ADS)

Park, Wanjae; Whang, Ki-Woong; Gwang Yoon, Young; Hwan Kim, Jeong; Rha, Sang-Ho; Seong Hwang, Cheol

2011-08-01

This paper reports the results of the high-rate dry etching of indium gallium zinc oxide (IGZO) at room temperature using BCl3/O2 plasma. We achieved an etch rate of 250 nm/min. We inferred from the x-ray photoelectron spectroscopy analysis that BOx or BOClx radicals generated from BCl3/O2 plasma cause the etching of the IGZO material. O2 initiates the etching of IGZO, and Ar removes nonvolatile byproducts from the surface during the etching process. Consequently, a smooth etched surface results when these gases are added to the etch gas.

Chemical method for producing smooth surfaces on silicon wafers

DOEpatents

Yu, Conrad

2003-01-01

An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching

NASA Astrophysics Data System (ADS)

Li, Hailiang; Ye, Tianchun; Shi, Lina; Xie, Changqing

2017-12-01

We present a facile and effective approach for fabricating high aspect ratio, dense and vertical silicon nanopillar arrays, using a combination of metal etching following electron-beam lithography and Au metal assisted chemical etching (MacEtch). Ti/Au nanostructures used as catalysts in MacEtch are formed by single layer resist-based electron-beam exposure followed by ion beam etching. The effects of MacEtch process parameters, including half period, etching time, the concentrations of H2O2 and HF, etching temperature and drying method are systematically investigated. Especially, we demonstrate an enhancement of etching quality by employing cold MacEtch process, and an enhancement in preventing the collapse of high aspect ratio nanostructures by employing low surface tension rinse liquid and natural evaporation in the drying stage. Using an optimized MacEtch process, vertical silicon nanopillar arrays with a period of 250 nm and aspect ratio up to 160:1 are realized. Our results should be instructive for exploring the achievable aspect ratio limit in silicon nanostructures and may find potential applications in photovoltaic devices, thermoelectric devices and x-ray diffractive optics.

On the origin of the angular momentum of galaxies: cosmological tidal torques supplemented by the Coriolis force

NASA Astrophysics Data System (ADS)

Casuso, E.; Beckman, J. E.

2015-05-01

We present here a theoretical model which can at least contribute to the observed relation between the specific angular momenta of galaxies and their masses. This study offers prima facie evidence that the origin of an angular momentum of galaxies could be somewhat more complex than previously proposed. The most recent observations point to a scenario in which, after recombination, matter was organized around bubbles (commonly termed voids), which acquired rotation by tidal torque interaction. Subsequently, a combination of the effects of the gravitational collapse of gas in protogalaxies and the Coriolis force due to the rotation of the voids could produce the rotation of spiral galaxies. Thereafter, the tidal interaction between the objects populating the quasi-spherical voids, in which the galaxies far away from the rotation axes (populating the sheet forming the surface of a void) interact with higher probability with others similarly situated in a neighbouring void, offers a mechanism for transforming some of the galaxies into ellipticals, breaking their spin and yielding galaxies with low net angular momentum, as observed. This model gives an explanation for those observations which suggest a tendency of galactic spins to align along the radius vectors pointing towards the centres of the voids for ellipticals/SO and parallel to filaments and sheets for the spirals. Furthermore, while in simple tidal torque theory the angular momentum supplied to galaxies diminishes drastically with the cosmic expansion, in our approximation for which the Coriolis force acts in addition to tidal torques, the Coriolis force due to void rotation ensures almost continuous angular momentum supply.

Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

PubMed

Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

2017-10-24

Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas

PubMed Central

2014-01-01

In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

The K 2S 2O 8-KOH photoetching system for GaN

NASA Astrophysics Data System (ADS)

Weyher, J. L.; Tichelaar, F. D.; van Dorp, D. H.; Kelly, J. J.; Khachapuridze, A.

2010-09-01

A recently developed photoetching system for n-type GaN, a KOH solution containing the strong oxidizing agent potassium peroxydisulphate (K 2S 2O 8), was studied in detail. By careful selection of the etching parameters, such as the ratio of components and the hydrodynamics, two distinct modes were defined: defect-selective etching (denoted by KSO-D) and polishing (KSO-P). Both photoetching methods can be used under open-circuit (electroless) conditions. Well-defined dislocation-related etch whiskers are formed during KSO-D etching. All types of dislocations are revealed, and this was confirmed by cross-sectional TEM examination of the etched samples. Extended electrically active defects are also clearly revealed. The known relationship between etch rate and carrier concentration for photoetching of GaN in KOH solutions was confirmed for KSO-D etch using Raman measurements. It is shown that during KSO-P etching diffusion is the rate-limiting step, i.e. this etch is suitable for polishing of GaN. Some constraints of the KSO etching system for GaN are discussed and peculiar etch features, so far not understood, are described.

Angular and velocity distributions of tungsten sputtered by low energy argon ions

NASA Astrophysics Data System (ADS)

Marenkov, E.; Nordlund, K.; Sorokin, I.; Eksaeva, A.; Gutorov, K.; Jussila, J.; Granberg, F.; Borodin, D.

2017-12-01

Sputtering by ions with low near-threshold energies is investigated. Experiments and simulations are conducted for tungsten sputtering by low-energy, 85-200 eV Ar atoms. The angular distributions of sputtered particles are measured. A new method for molecular dynamics simulation of sputtering taking into account random crystallographic surface orientation is developed, and applied for the case under consideration. The simulations approximate experimental results well. At low energies the distributions acquire "butterfly-like" shape with lower sputtering yields for close to normal angles comparing to the cosine distribution. The energy distributions of sputtered particles were simulated. The Thompson distribution remains valid down to near-threshold 85 eV case.

Effective Elastic Modulus as a Function of Angular Leaf Span for Curved Leaves of Pyrolytic Boron Nitride

NASA Technical Reports Server (NTRS)

Kaforey, M. L.; Deeb, C. W.; Matthiesen, D. H.

1999-01-01

A theoretical equation was derived to predict the spring constant (load/deflection) for a simply supported cylindrical section with a line force applied at the center. Curved leaves of PBN were mechanically deformed and the force versus deflection data was recorded and compared to the derived theoretical equation to yield an effective modulus for each leaf. The effective modulus was found to vary from the pure shear modulus for a flat plate to a mixed mode for a half cylinder as a function of the sine of one half the angular leaf span. The spring constants of individual PBN leaves were usually predicted to within 30%.

Anisotropic Hydrogen Etching of Chemical Vapor Deposited Graphene

NASA Astrophysics Data System (ADS)

Zhang, Yi; Li, Zhen; Zhang, Luyao; Kim, Pyojae; Zhou, Chongwu

2012-02-01

In terms of the preparation of graphene, chemical vapor deposition (CVD) has raised its popularity as a scalable and cost effective approach for graphene synthesis. While the formation of graphene on copper foil has been intensively studied, the reverse reaction of graphene reacts with hydrogen has not been systematically studied. In this talk we will present a simple, clean, and highly anisotropic hydrogen etching method for CVD graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 ^oC, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent and the etching of graphene at 800 oC is most efficient and anisotropic. 80% of the angles of graphene edges after etching are 120^o, indicating the etching is highly anisotropic. No increase of D band along the etched edges indicates that the crystallographic orientation of etching is zigzag direction. Furthermore, we observed that copper played an important role in catalyzing the etching reaction, as no etching was observed for graphene transferred to Si/SiO2 under similar conditions. This highly anisotropic hydrogen etching technology may work as a simple and convenient way to determine graphene crystal orientation and grain size, and may enable the etching of graphene into nanoribbons for electronic applications.

Porous Silicon Nanoparticle Photosensitizers for Singlet Oxygen and Their Phototoxicity Against Cancer Cells

PubMed Central

Xiao, Ling; Gu, Luo; Howell, Stephen B.; Sailor, Michael J.

2011-01-01

Porous Si nanoparticles, prepared from electrochemically etched single crystal Si wafers, function as photosensitizers to generate 1O2 in ethanol and in aqueous media. The preparation conditions for the porous Si nanoparticles were optimized to maximize (1) the yield of material; (2) its quantum yield of 1O2 production; and (3) its in vitro degradation properties. The optimal formulation was determined to consist of nanoparticles 146 ± 7 nm in diameter, with nominal pore sizes of 12 ± 4 nm. The quantum yield for 1O2 production is 0.10 ± 0.02 in ethanol and 0.17 ± 0.01 in H2O. HeLa or NIH-3T3 cells treated with 100 µg/mL porous Si nanoparticles and exposed to 60 J/cm2 white light (infrared filtered, 100 mW/cm2 for 10 min) exhibit ~ 45% cell death, while controls containing no nanoparticles show 10% or 25% cell death, respectively. The dark control experiment yields < 10% cytotoxicity for either cell type. PMID:21452822

Dependence of yield of nuclear track-biosensors on track radius and analyte concentration

NASA Astrophysics Data System (ADS)

García-Arellano, H.; Muñoz H., G.; Fink, D.; Vacik, J.; Hnatowicz, V.; Alfonta, L.; Kiv, A.

2018-04-01

In swift heavy ion track-based polymeric biosensor foils with incorporated enzymes one exploits the correlation between the analyte concentration and the sensor current, via the enrichment of charged enzymatic reaction products in the track's confinement. Here we study the influence of the etched track radius on the biosensor's efficiency. These sensors are analyte-specific only if both the track radii and the analyte concentration exceed certain threshold values of ∼15 nm and ∼10-6 M (for glucose sensing), respectively. Below these limits the sensor signal stems un-specifically from any charge carrier. In its proper working regime, the inner track walls are smoothly covered by enzymes and the efficiency is practically radius independent. Theory shows that the measured current should be slightly sub-proportional to the analyte concentration; the measurements roughly reconfirm this. Narrower tracks (∼5-15 nm radius) with reduced enzyme coverage lead to decreasing efficiency. Tiny signals visible when the tracks are etched to effective radii between 0 and ∼5 nm are tentatively ascribed to enzymes bonded to surface-near nano-cracks in the polymer foil, resulting from its degradation due to aging, rather than to the tracks. Precondition for this study was the accurate determination of the etched track radii, which is possible only by a nanofluidic approach. This holds to some extent even for enzyme-covered tracks, though in this case most of the wall charges are compensated by enzyme bonding.

Effect of additional etching and ethanol-wet bonding on the dentin bond strength of one-step self-etch adhesives

PubMed Central

Ahn, Joonghee; Jung, Kyoung-Hwa; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon

2015-01-01

Objectives This study examined the effects of additional acid etching on the dentin bond strength of one-step self-etch adhesives with different compositions and pH. The effect of ethanol wetting on etched dentin bond strength of self-etch adhesives was also evaluated. Materials and Methods Forty-two human permanent molars were classified into 21 groups according to the adhesive types (Clearfil SE Bond [SE, control]; G-aenial Bond [GB]; Xeno V [XV]; Beauti Bond [BB]; Adper Easy Bond [AE]; Single Bond Universal [SU]; All Bond Universal [AU]), and the dentin conditioning methods. Composite resins were placed on the dentin surfaces, and the teeth were sectioned. The microtensile bond strength was measured, and the failure mode of the fractured specimens was examined. The data were analyzed statistically using two-way ANOVA and Duncan's post hoc test. Results In GB, XV and SE (pH ≤ 2), the bond strength was decreased significantly when the dentin was etched (p < 0.05). In BB, AE and SU (pH 2.4 - 2.7), additional etching did not affect the bond strength (p > 0.05). In AU (pH = 3.2), additional etching increased the bond strength significantly (p < 0.05). When adhesives were applied to the acid etched dentin with ethanol-wet bonding, the bond strength was significantly higher than that of the no ethanol-wet bonding groups, and the incidence of cohesive failure was increased. Conclusions The effect of additional acid etching on the dentin bond strength was influenced by the pH of one-step self-etch adhesives. Ethanol wetting on etched dentin could create a stronger bonding performance of one-step self-etch adhesives for acid etched dentin. PMID:25671215

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

DOEpatents

Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

2015-05-12

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma

NASA Astrophysics Data System (ADS)

Song, Junqiang; Shi, Xun; Chen, Lidong

2014-10-01

Etching characteristics of p-type (BiSb)2Te3 films were studied with CH4/H2/Ar gas mixture using an inductively coupled plasma (ICP)-reactive ion etching (RIE) system. The effects of gas mixing ratio, working pressure and gas flow rate on the etch rate and the surface morphology were investigated. The vertical etched profile with the etch rate of 600 nm/min was achieved at the optimized processing parameters. X-ray photoelectron spectroscopy (XPS) analysis revealed the non-uniform etching of (BiSb)2Te3 films due to disparate volatility of the etching products. Micro-masking effects caused by polymer deposition and Bi-rich residues resulted in roughly etched surfaces. Smooth surfaces can be obtained by optimizing the CH4/H2/Ar mixing ratio.

Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching

NASA Astrophysics Data System (ADS)

Asoh, Hidetaka; Fujihara, Kosuke; Ono, Sachiko

2012-07-01

The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etched in a mixed solution of HF and H2O2 at room temperature, resulting in the formation of ordered macropores in silicon along the [111] direction, which is not achievable by conventional chemical etching without a catalyst. In the anisotropic etching in TMAH, the macropores changed from being circular to being hexagonal and finally to being triangular, owing to the difference in etching rate between the crystal planes.

Metal etching composition

NASA Technical Reports Server (NTRS)

Otousa, Joseph E. (Inventor); Thomas, Clark S. (Inventor); Foster, Robert E. (Inventor)

1991-01-01

The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

New frontiers of atomic layer etching

NASA Astrophysics Data System (ADS)

Sherpa, Sonam D.; Ranjan, Alok

2018-03-01

Interest in atomic layer etching (ALE) has surged recently because it offers several advantages over continuous or quasicontinuous plasma etching. These benefits include (1) independent control of ion energy, ion flux, and radical flux, (2) flux-independent etch rate that mitigates the iso-dense loading effects, and (3) ability to control the etch rate with atomic or nanoscale precision. In addition to these benefits, we demonstrate an area-selective etching for maskless lithography as a new frontier of ALE. In this paper, area-selective etching refers to the confinement of etching into the specific areas of the substrate. The concept of area-selective etching originated during our studies on quasi-ALE of silicon nitride which consists of sequential exposure of silicon nitride to hydrogen and fluorinated plasma. The findings of our studies reported in this paper suggest that it may be possible to confine the etching into specific areas of silicon nitride without using any mask by replacing conventional hydrogen plasma with a localized source of hydrogen ions.

Determining the Ocean's Role on the Variable Gravity Field and Earth Rotation

NASA Technical Reports Server (NTRS)

Ponte, Rui M.; Frey, H. (Technical Monitor)

2000-01-01

A number of ocean models of different complexity have been used to study changes in the oceanic angular momentum (OAM) and mass fields and their relation to the variable Earth rotation and gravity field. Time scales examined range from seasonal to a few days. Results point to the importance of oceanic signals in driving polar motion, in particular the Chandler and annual wobbles. Results also show that oceanic signals have a measurable impact on length-of-day variations. Various circulation features and associated mass signals, including the North Pacific subtropical gyre, the equatorial currents, and the Antarctic Circumpolar Current play a significant role in oceanic angular momentum variability. The impact on OAM values of an optimization procedure that uses available data to constrain ocean model results was also tested for the first time. The optimization procedure yielded substantial changes, in OAM, related to adjustments in both motion and mass fields,as well as in the wind stress torques acting on the ocean. Constrained OAM values were found to yield noticeable improvements in the agreement with the observed Earth rotation parameters, particularly at the seasonal timescale.

High-speed scanning ablation of dental hard tissues with a λ = 9.3 μm CO2 laser: adhesion, mechanical strength, heat accumulation, and peripheral thermal damage

PubMed Central

Nguyen, Daniel; Chang, Kwang; Hedayatollahnajafi, Saba; Staninec, Michal; Chan, Kenneth; Lee, Robert; Fried, Daniel

2011-01-01

CO2 lasers can be operated at high laser pulse repetition rates for the rapid and precise removal of dental decay. Excessive heat accumulation and peripheral thermal damage is a concern when using high pulse repetition rates. Peripheral thermal damage can adversely impact the mechanical strength of the irradiated tissue, particularly for dentin, and reduce the adhesion characteristics of the modified surfaces. The interpulpal temperature rise was recorded using microthermocouples situated at the roof of the pulp chamber on teeth that were occlusally ablated using a rapidly-scanned CO2 laser operating at 9.3 μm with a pulse duration of 10 to 15 μs and repetition rate of 300 Hz over a 2 min time course. The adhesion strength of laser treated enamel and dentin surfaces was measured for various laser scanning parameters with and without post-ablation acid etching using the single-plane shear test. The mechanical strength of laser-ablated dentin surfaces were determined via the four-point bend test and compared to control samples prepared with 320 grit wet sand paper to simulate conventional preparations. Thermocouple measurements indicated that the temperature remained below ambient temperature if water-cooling was used. There was no discoloration of either dentin or enamel laser treated surfaces, the surfaces were uniformly ablated, and there were no cracks visible. Four-point bend tests yielded mean mechanical strengths of 18.2 N (s.d. = 4.6) for ablated dentin and 18.1 N (s.d. = 2.7) for control (p > 0.05). Shear tests yielded mean bond strengths approaching 30 MPa for both enamel and dentin under certain irradiation conditions. These values were slightly lower than nonirradiated acid-etched control samples. Additional studies are needed to determine if the slightly lower bond strength than the acid-etched control samples is clinically significant. These measurements demonstrate that enamel and dentin surfaces can be rapidly ablated by CO2 lasers with minimal peripheral thermal and mechanical damage and without excessive heat accumulation. PMID:21806256

High-speed scanning ablation of dental hard tissues with a λ = 9.3 μm CO2 laser: adhesion, mechanical strength, heat accumulation, and peripheral thermal damage

NASA Astrophysics Data System (ADS)

Nguyen, Daniel; Chang, Kwang; Hedayatollahnajafi, Saba; Staninec, Michal; Chan, Kenneth; Lee, Robert; Fried, Daniel

2011-07-01

CO2 lasers can be operated at high laser pulse repetition rates for the rapid and precise removal of dental decay. Excessive heat accumulation and peripheral thermal damage is a concern when using high pulse repetition rates. Peripheral thermal damage can adversely impact the mechanical strength of the irradiated tissue, particularly for dentin, and reduce the adhesion characteristics of the modified surfaces. The interpulpal temperature rise was recorded using microthermocouples situated at the roof of the pulp chamber on teeth that were occlusally ablated using a rapidly-scanned CO2 laser operating at 9.3 μm with a pulse duration of 10 to 15 μs and repetition rate of 300 Hz over a 2 min time course. The adhesion strength of laser treated enamel and dentin surfaces was measured for various laser scanning parameters with and without post-ablation acid etching using the single-plane shear test. The mechanical strength of laser-ablated dentin surfaces were determined via the four-point bend test and compared to control samples prepared with 320 grit wet sand paper to simulate conventional preparations. Thermocouple measurements indicated that the temperature remained below ambient temperature if water-cooling was used. There was no discoloration of either dentin or enamel laser treated surfaces, the surfaces were uniformly ablated, and there were no cracks visible. Four-point bend tests yielded mean mechanical strengths of 18.2 N (s.d. = 4.6) for ablated dentin and 18.1 N (s.d. = 2.7) for control (p > 0.05). Shear tests yielded mean bond strengths approaching 30 MPa for both enamel and dentin under certain irradiation conditions. These values were slightly lower than nonirradiated acid-etched control samples. Additional studies are needed to determine if the slightly lower bond strength than the acid-etched control samples is clinically significant. These measurements demonstrate that enamel and dentin surfaces can be rapidly ablated by CO2 lasers with minimal peripheral thermal and mechanical damage and without excessive heat accumulation.

High-speed scanning ablation of dental hard tissues with a λ = 9.3 μm CO2 laser: adhesion, mechanical strength, heat accumulation, and peripheral thermal damage.

PubMed

Nguyen, Daniel; Chang, Kwang; Hedayatollahnajafi, Saba; Staninec, Michal; Chan, Kenneth; Lee, Robert; Fried, Daniel

2011-07-01

CO(2) lasers can be operated at high laser pulse repetition rates for the rapid and precise removal of dental decay. Excessive heat accumulation and peripheral thermal damage is a concern when using high pulse repetition rates. Peripheral thermal damage can adversely impact the mechanical strength of the irradiated tissue, particularly for dentin, and reduce the adhesion characteristics of the modified surfaces. The interpulpal temperature rise was recorded using microthermocouples situated at the roof of the pulp chamber on teeth that were occlusally ablated using a rapidly-scanned CO(2) laser operating at 9.3 μm with a pulse duration of 10 to 15 μs and repetition rate of 300 Hz over a 2 min time course. The adhesion strength of laser treated enamel and dentin surfaces was measured for various laser scanning parameters with and without post-ablation acid etching using the single-plane shear test. The mechanical strength of laser-ablated dentin surfaces were determined via the four-point bend test and compared to control samples prepared with 320 grit wet sand paper to simulate conventional preparations. Thermocouple measurements indicated that the temperature remained below ambient temperature if water-cooling was used. There was no discoloration of either dentin or enamel laser treated surfaces, the surfaces were uniformly ablated, and there were no cracks visible. Four-point bend tests yielded mean mechanical strengths of 18.2 N (s.d. = 4.6) for ablated dentin and 18.1 N (s.d. = 2.7) for control (p > 0.05). Shear tests yielded mean bond strengths approaching 30 MPa for both enamel and dentin under certain irradiation conditions. These values were slightly lower than nonirradiated acid-etched control samples. Additional studies are needed to determine if the slightly lower bond strength than the acid-etched control samples is clinically significant. These measurements demonstrate that enamel and dentin surfaces can be rapidly ablated by CO(2) lasers with minimal peripheral thermal and mechanical damage and without excessive heat accumulation.

Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

NASA Astrophysics Data System (ADS)

Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

2015-12-01

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

PubMed

Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

2014-08-01

To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

Irradiation and Enhanced Magnetic Braking in Cataclysmic Variables

NASA Astrophysics Data System (ADS)

McCormick, P. J.; Frank, J.

1998-12-01

In previous work we have shown that irradiation driven mass transfer cycles can occur in cataclysmic variables at all orbital periods if an additional angular momentum loss mechanism is assumed. Earlier models simply postulated that the enhanced angular momentum loss was proportional to the mass transfer rate without any specific physical model. In this paper we present a simple modification of magnetic braking which seems to have the right properties to sustain irradiation driven cycles at all orbital periods. We assume that the wind mass loss from the irradiated companion consists of two parts: an intrinsic stellar wind term plus an enhancement that is proportional to the irradiation. The increase in mass flow reduces the specific angular momentum carried away by the flow but nevertheless yields an enhanced rate of magnetic braking. The secular evolution of the binary is then computed numerically with a suitably modified double polytropic code (McCormick & Frank 1998). With the above model and under certain conditions, mass transfer oscillations occur at all orbital periods.

Photo-reorganization of 3-alkoxy-6-chloro-2-(benzo[b]thiophen-2-yl)-4H-chromen-4-ones: a green and convenient synthesis of angular pentacyclics.

PubMed

Dalal, Aarti; Khanna, Radhika; Kumar, Parvin; Kamboj, Ramesh C

2017-05-17

Photo-reorganization of 3-alkoxy-6-chloro-2-(benzo[b]thiophen-2-yl)-4H-chromen-4-ones in methanol with Pyrex filtered UV-light from a medium pressure 125 W Hg-vapor lamp led to the formation of angular pentacyclic compounds (dihydro and aromatic products) along with some rearranged chromenones where the product(s) distribution depended upon the structure of 3-alkoxy groups (methoxy, ethoxy, allyloxy and benzyloxy). The phenyl moiety in the 3-benzyloxy group had a profound effect on the dihydro product(s) formation as the latter was in high yield when the alkoxy group was benzyloxy followed by allyloxy, ethoxy and methoxy groups. The present photochemical study represents a general method for the synthesis of some angular pentacyclic - benzothiophene fused xanthenone derivatives in a single step without using any specific and toxic reagent. The structures of the new organic scaffolds obtained were established by their spectral data (UV, IR and NMR).

Passive measurement-device-independent quantum key distribution with orbital angular momentum and pulse position modulation

NASA Astrophysics Data System (ADS)

Wang, Lian; Zhou, Yuan-yuan; Zhou, Xue-jun; Chen, Xiao

2018-03-01

Based on the orbital angular momentum and pulse position modulation, we present a novel passive measurement-device-independent quantum key distribution (MDI-QKD) scheme with the two-mode source. Combining with the tight bounds of the yield and error rate of single-photon pairs given in our paper, we conduct performance analysis on the scheme with heralded single-photon source. The numerical simulations show that the performance of our scheme is significantly superior to the traditional MDI-QKD in the error rate, key generation rate and secure transmission distance, since the application of orbital angular momentum and pulse position modulation can exclude the basis-dependent flaw and increase the information content for each single photon. Moreover, the performance is improved with the rise of the frame length. Therefore, our scheme, without intensity modulation, avoids the source side channels and enhances the key generation rate. It has greatly utility value in the MDI-QKD setups.

Analysis of digital images into energy-angular momentum modes.

PubMed

Vicent, Luis Edgar; Wolf, Kurt Bernardo

2011-05-01

The measurement of continuous wave fields by a digital (pixellated) screen of sensors can be used to assess the quality of a beam by finding its formant modes. A generic continuous field F(x, y) sampled at an N × N Cartesian grid of point sensors on a plane yields a matrix of values F(q(x), q(y)), where (q(x), q(y)) are integer coordinates. When the approximate rotational symmetry of the input field is important, one may use the sampled Laguerre-Gauss functions, with radial and angular modes (n, m), to analyze them into their corresponding coefficients F(n, m) of energy and angular momentum (E-AM). The sampled E-AM modes span an N²-dimensional space, but are not orthogonal--except for parity. In this paper, we propose the properly orthonormal "Laguerre-Kravchuk" discrete functions Λ(n, m)(q(x), q(y)) as a convenient basis to analyze the sampled beams into their E-AM polar modes, and with them synthesize the input image exactly.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marolf, Donald; Palmer, Belkis Cabrera; Physics Department, Syracuse University, Syracuse, New York 13244

A thermodynamic argument is presented suggesting that near-extremal spinning D1-D5-P black strings become unstable when their angular momentum exceeds J{sub crit}=3Q{sub 1}Q{sub 5}/2{radical}(2). In contrast, the dimensionally reduced black holes are thermodynamically stable. The proposed instability involves a phase in which the spin angular momentum above J{sub crit} is transferred to gyration of the string in space, i.e., to orbital angular momentum of parts of the string about the mean location in space. Thus the string becomes a rotating helical coil. We note that an instability of this form would yield a counter-example to the Gubser-Mitra conjecture, which proposes amore » particular link between dynamic black string instabilities and the thermodynamics of black strings. There may also be other instabilities associated with radiation modes of various fields. Our arguments also apply to the D-brane bound states associated with these black strings in weakly coupled string theory.« less

Accurate radiative transfer calculations for layered media.

PubMed

Selden, Adrian C

2016-07-01

Simple yet accurate results for radiative transfer in layered media with discontinuous refractive index are obtained by the method of K-integrals. These are certain weighted integrals applied to the angular intensity distribution at the refracting boundaries. The radiative intensity is expressed as the sum of the asymptotic angular intensity distribution valid in the depth of the scattering medium and a transient term valid near the boundary. Integrated boundary equations are obtained, yielding simple linear equations for the intensity coefficients, enabling the angular emission intensity and the diffuse reflectance (albedo) and transmittance of the scattering layer to be calculated without solving the radiative transfer equation directly. Examples are given of half-space, slab, interface, and double-layer calculations, and extensions to multilayer systems are indicated. The K-integral method is orders of magnitude more accurate than diffusion theory and can be applied to layered scattering media with a wide range of scattering albedos, with potential applications to biomedical and ocean optics.

Fabrication and analysis of a micro-machined tri-axis gyroscope

NASA Astrophysics Data System (ADS)

Tsai, Nan-Chyuan; Sue, Chung-Yang

2008-11-01

This paper presents an innovative micro-gyroscope design. Solely by SOI (silicon on insulator) fabrication technology and wet etching, the proposed micro-gyroscope can be produced in batch and is capable of detecting three-axis angular rates. The induced motions of all individual seismic mass modules are designed to respond in the directions orthogonal to each other in order to decouple the obtained measurements. In our work, three pairs of high-resolution differential capacitors with signal processing circuits are employed to measure the angular velocity components in three axes. On the other hand, the drive electrode comb is used to constantly vibrate the outer-ring in the tangential direction by a sinusoidal voltage. The signal bandwidth is increased by distributed translational proof masses (DTPM), placed 90° apart orderly. Each individual proof mass of DTPM is designed with natural frequency discrepancy and constrained to move in the radial direction so that the superior mode matching can be easily, to some extent, achieved. The suspension flexures are particularly designed to resist planar displacements in the drive mode but increase the stroke of tilting angular displacement in the sense mode. By considering the complicated geometry of the suspension flexures, FEM (finite element method) is employed to examine the potential maximum induced mechanical stress. The dynamic equations of the proposed gyroscope are established so that the embedded gyroscopic effects are explicitly unveiled. More importantly, the efficacy of the drive and sense circuit modules are verified by commercial softwares Hspice and Multisim. By intensive computer simulations and preliminary experimental studies, the resolution, bandwidth and decoupling capability of the tri-axis gyroscope are expected to be fairly enhanced if a certain degree of trade-off is preset.Corrections were made to figure 5 in this article on 3 October 2008. The corrected electronic version is identical to the print version.

Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Liu, L. F.; Chen, Y. Y.; Ye, Z. H.; Hu, X. N.; Ding, R. J.; He, L.

2018-03-01

Plasma etching is a powerful technique for transferring high-resolution lithographic patterns into HgCdTe material with low etch-induced damage, and it is important for fabricating small-pixel-size HgCdTe infrared focal plane array (IRFPA) detectors. P- to n-type conversion is known to occur during plasma etching of vacancy-doped HgCdTe; however, it is usually unwanted and its removal requires extra steps. Etching at cryogenic temperatures can reduce the etch-induced type conversion depth in HgCdTe via the electrical damage mechanism. Laser beam-induced current (LBIC) is a nondestructive photoelectric characterization technique which can provide information regarding the vertical and lateral electrical field distribution, such as defects and p-n junctions. In this work, inductively coupled plasma (ICP) etching of HgCdTe was implemented at cryogenic temperatures. For an Ar/CH4 (30:1 in SCCM) plasma with ICP input power of 1000 W and RF-coupled DC bias of ˜ 25 V, a HgCdTe sample was dry-etched at 123 K for 5 min using ICP. The sample was then processed to remove a thin layer of the plasma-etched region while maintaining a ladder-like damaged layer by continuously controlling the wet chemical etching time. Combining the ladder etching method and LBIC measurement, the ICP etching-induced electrical damage depth was measured and estimated to be about 20 nm. The results indicate that ICP etching at cryogenic temperatures can significantly suppress plasma etching-induced electrical damage, which is beneficial for defining HgCdTe mesa arrays.

Etching of enamel for direct bonding with a thulium fiber laser

NASA Astrophysics Data System (ADS)

Kabaş Sarp, Ayşe S.; Gülsoy, Murat

2011-03-01

Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5°C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5°C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

Does active application of universal adhesives to enamel in self-etch mode improve their performance?

PubMed

Loguercio, Alessandro D; Muñoz, Miguel Angel; Luque-Martinez, Issis; Hass, Viviane; Reis, Alessandra; Perdigão, Jorge

2015-09-01

To evaluate the effect of adhesion strategy on the enamel microshear bond strengths (μSBS), etching pattern, and in situ degree of conversion (DC) of seven universal adhesives. 84 extracted third molars were sectioned in four parts (buccal, lingual, proximal) and divided into 21 groups, according to the combination of the main factors adhesive (AdheSE Universal [ADU], All-Bond Universal [ABU], Clearfil Universal [CFU], Futurabond U [FBU], G-Bond Plus [GBP], Prime&Bond Elect (PBE), and Scotchbond Universal Adhesive [SBU]), and adhesion strategy (etch-and-rinse, active self-etch, and passive self-etch). Specimens were stored in water (37°C/24h) and tested at 1.0mm/min (μSBS). Enamel-resin interfaces were evaluated for DC using micro-Raman spectroscopy. The enamel-etching pattern was evaluated under a field-emission scanning electron microscope (direct and replica techniques). Data were analyzed with two-way ANOVA and Tukey's test (α=0.05). Active self-etch application increased μSBS and DC for five out of the seven universal adhesives when compared to passive application (p<0.001). A deeper enamel-etching pattern was observed for all universal adhesives in the etch-and-rinse strategy. A slight improvement in etching ability was observed in active self-etch application compared to that of passive self-etch application. Replicas of GBP and PBE applied in active self-etch mode displayed morphological features compatible with water droplets. The DC of GBP and PBE were not affected by the application/strategy mode. In light of the improved performance of universal adhesives when applied actively in SE mode, selective enamel etching with phosphoric acid may not be crucial for their adhesion to enamel. The active application of universal adhesives in self-etch mode may be a practical alternative to enamel etching in specific clinical situations. Copyright © 2015 Elsevier Ltd. All rights reserved.

A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

NASA Astrophysics Data System (ADS)

Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

2017-08-01

The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

Bonding performance of universal adhesives to er,cr:YSGG laser-irradiated enamel.

PubMed

Ayar, Muhammet Kerim; Erdemir, Fatih

2017-04-01

Universal adhesives have been recently introduced for use as self-etch or etch-and-rinse adhesives depending on the dental substrate and clinical condition. However, their bonding effectiveness to laser-irradiated enamel is still not well-known. Thus, the aim of this study was to compare the shear bond strength (SBS) of universal adhesives (Single Bond Universal; Nova Compo-B Plus) applied to Er,Cr:YSGG laser-irradiated enamel with SBS of the same adhesives applied in self-etch and acid-etching modes, respectively. Crown segments of sixty bovine incisors were embedded into standardized acrylic blocks. Flattened enamel surfaces were prepared. Specimens were divided into six groups according to universal adhesives and application modes randomly (n = 10), as follows: Single Bond Universal/acid-etching mode; Nova Compo-B Plus/acid-etching mode; Single Bond Universal/self-etching mode; Nova Compo-B Plus/self-etching mode; and Single Bond Universal/Er,Cr:YSGG Laser-etching mode; Nova Compo-B Plus/Er,Cr:YSGG Laser-etching mode. After surface treatments, universal adhesives were applied onto surfaces. SBS was determined after storage in water for 24 h using a universal testing machine with a crosshead speed of 0.5 mm min -1 . Failure modes were evaluated using a stereomicroscope. Data was analyzed using two-way of analyses of variances (ANOVA) (p = 0.05). Two-way ANOVA revealed that adhesive had no effect on SBS (p = 0.88), but application mode significantly influenced SBS (p = 0.00). Acid-etching significantly increased SBS, whereas there are no significant differences between self-etch mode and laser-etching for both adhesives. The bond strength of universal adhesives may depend on application mode. Acid etching may significantly increase bond strength, while laser etching may provide similar bond strength when compared to self-etch mode. © 2016 Wiley Periodicals, Inc.

Measurement of fission yields and isomeric yield ratios at IGISOL

NASA Astrophysics Data System (ADS)

Pomp, Stephan; Mattera, Andrea; Rakopoulos, Vasileios; Al-Adili, Ali; Lantz, Mattias; Solders, Andreas; Jansson, Kaj; Prokofiev, Alexander V.; Eronen, Tommi; Gorelov, Dimitri; Jokinen, Ari; Kankainen, Anu; Moore, Iain D.; Penttilä, Heikki; Rinta-Antila, Sami

2018-03-01

Data on fission yields and isomeric yield ratios (IYR) are tools to study the fission process, in particular the generation of angular momentum. We use the IGISOL facility with the Penning trap JYFLTRAP in Jyväskylä, Finland, for such measurements on 232Th and natU targets. Previously published fission yield data from IGISOL concern the 232Th(p,f) and 238U(p,f) reactions at 25 and 50 MeV. Recently, a neutron source, using the Be(p,n) reaction, has been developed, installed and tested. We summarize the results for (p,f) focusing on the first measurement of IYR by direct ion counting. We also present first results for IYR and relative yields for Sn and Sb isotopes in the 128-133 mass range from natU(n,f) based on γ-spectrometry. We find a staggering behaviour in the cumulative yields for Sn and a shift in the independent fission yields for Sb as compared to current evaluations. Plans for the future experimental program on fission yields and IYR measurements are discussed.

SEM based overlay measurement between resist and buried patterns

NASA Astrophysics Data System (ADS)

Inoue, Osamu; Okagawa, Yutaka; Hasumi, Kazuhisa; Shao, Chuanyu; Leray, Philippe; Lorusso, Gian; Baudemprez, Bart

2016-03-01

With the continuous shrink in pattern size and increased density, overlay control has become one of the most critical issues in semiconductor manufacturing. Recently, SEM based overlay of AEI (After Etch Inspection) wafer has been used for reference and optimization of optical overlay (both Image Based Overlay (IBO) and Diffraction Based Overlay (DBO)). Overlay measurement at AEI stage contributes monitor and forecast the yield after formation by etch and calibrate optical measurement tools. however those overlay value seems difficult directly for feedback to a scanner. Therefore, there is a clear need to have SEM based overlay measurements of ADI (After Develop Inspection) wafers in order to serve as reference for optical overlay and make necessary corrections before wafers go to etch. Furthermore, to make the corrections as accurate as possible, actual device like feature dimensions need to be measured post ADI. This device size measurement is very unique feature of CDSEM , which can be measured with smaller area. This is currently possible only with the CD-SEM. This device size measurement is very unique feature of CD-SEM , which can be measured with smaller area. In this study, we assess SEM based overlay measurement of ADI and AEI wafer by using a sample from an N10 process flow. First, we demonstrate SEM based overlay performance at AEI by using dual damascene process for Via 0 (V0) and metal 1 (M1) layer. We also discuss the overlay measurements between litho-etch-litho stages of a triple patterned M1 layer and double pattern V0. Second, to illustrate the complexities in image acquisition and measurement we will measure overlay between M1B resist and buried M1A-Hard mask trench. Finally, we will show how high accelerating voltage can detect buried pattern information by BSE (Back Scattering Electron). In this paper we discuss the merits of this method versus standard optical metrology based corrections.

Propagation of nuclear data uncertainties for fusion power measurements

NASA Astrophysics Data System (ADS)

Sjöstrand, Henrik; Conroy, Sean; Helgesson, Petter; Hernandez, Solis Augusto; Koning, Arjan; Pomp, Stephan; Rochman, Dimitri

2017-09-01

Neutron measurements using neutron activation systems are an essential part of the diagnostic system at large fusion machines such as JET and ITER. Nuclear data is used to infer the neutron yield. Consequently, high-quality nuclear data is essential for the proper determination of the neutron yield and fusion power. However, uncertainties due to nuclear data are not fully taken into account in uncertainty analysis for neutron yield calibrations using activation foils. This paper investigates the neutron yield uncertainty due to nuclear data using the so-called Total Monte Carlo Method. The work is performed using a detailed MCNP model of the JET fusion machine; the uncertainties due to the cross-sections and angular distributions in JET structural materials, as well as the activation cross-sections in the activation foils, are analysed. It is found that a significant contribution to the neutron yield uncertainty can come from uncertainties in the nuclear data.

Isotropic plasma etching of Ge Si and SiN x films

DOE PAGES

Henry, Michael David; Douglas, Erica Ann

2016-08-31

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

NASA Astrophysics Data System (ADS)

Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

2018-06-01

The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

Ion-beam-assisted etching of diamond

NASA Technical Reports Server (NTRS)

Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

1985-01-01

The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

Metal-assisted etch combined with regularizing etch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yim, Joanne; Miller, Jeff; Jura, Michael

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performingmore » a chemical etch which results in regularized openings in the silicon substrate.« less

Difference in anisotropic etching characteristics of alkaline and copper based acid solutions for single-crystalline Si.

PubMed

Chen, Wei; Liu, Yaoping; Yang, Lixia; Wu, Juntao; Chen, Quansheng; Zhao, Yan; Wang, Yan; Du, Xiaolong

2018-02-21

The so called inverted pyramid arrays, outperforming conventional upright pyramid textures, have been successfully achieved by one-step Cu assisted chemical etching (CACE) for light reflection minimization in silicon solar cells. Due to the lower reduction potential of Cu 2+ /Cu and different electronic properties of different Si planes, the etching of Si substrate shows orientation-dependent. Different from the upright pyramid obtained by alkaline solutions, the formation of inverted pyramid results from the coexistence of anisotropic etching and localized etching process. The obtained structure is bounded by Si {111} planes which have the lowest etching rate, no matter what orientation of Si substrate is. The Si etching rate and (100)/(111) etching ratio are quantitatively analyzed. The different behaviors of anisotropic etching of Si by alkaline and Cu based acid etchant have been systematically investigated.

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

NASA Astrophysics Data System (ADS)

Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

2018-06-01

A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

NASA Astrophysics Data System (ADS)

Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

2017-06-01

The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

PubMed

Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

2015-01-14

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

Capabilities of ICP-RIE cryogenic dry etching of silicon: review of exemplary microstructures

NASA Astrophysics Data System (ADS)

Sökmen, Ü.; Stranz, A.; Fündling, S.; Wehmann, H.-H.; Bandalo, V.; Bora, A.; Tornow, M.; Waag, A.; Peiner, E.

2009-10-01

Inductively coupled plasma (ICP) cryogenic dry etching was used to etch submicron pores, nano contact lines, submicron diameter pillars, thin and thick cantilevers, membrane structures and anisotropic deep structures with high aspect ratios in silicon for bio-nanoelectronics, optoelectronics and nano-micro electromechanical systems (NMEMS). The ICP cryogenic dry etching gives us the advantage of switching plasmas between etch rates of 13 nm min-1 and 4 µm min-1 for submicron pores and for membrane structures, respectively. A very thin photoresist mask can endure at -75 °C even during etching 70 µm deep for cantilevers and 300 µm deep for membrane structures. Coating the backsides of silicon membrane substrates with a thin photoresist film inhibited the lateral etching of cantilevers during their front release. Between -95 °C and -140 °C, we realized crystallographic-plane-dependent etching that creates facets only at the etch profile bottom. By varying the oxygen content and the process temperature, we achieved good control over the shape of the etched structures. The formation of black silicon during membrane etching down to 300 µm was delayed by reducing the oxygen content.

A Study on Ohmic Contact to Dry-Etched p-GaN

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Ao, Jin-Ping; Okada, Masaya; Ohno, Yasuo

Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000°C 30s) was tried on the SiCl4/Cl2-etched p-GaN and Ohmic contact was obtained.

ScAlN etch mask for highly selective silicon etching

DOE PAGES

Henry, Michael David; Young, Travis R.; Griffin, Ben

2017-09-08

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Weiye; Sridhar, Shyam; Liu, Lei

2014-05-28

Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) andmore » Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.« less

Genome-Wide Association Studies of Anthracnose and Angular Leaf Spot Resistance in Common Bean (Phaseolus vulgaris L.)

PubMed Central

Perseguini, Juliana Morini Küpper Cardoso; Oblessuc, Paula Rodrigues; Rosa, João Ricardo Bachega Feijó; Gomes, Kleber Alves; Chiorato, Alisson Fernando; Carbonell, Sérgio Augusto Morais; Garcia, Antonio Augusto Franco; Vianello, Rosana Pereira; Benchimol-Reis, Luciana Lasry

2016-01-01

The common bean (Phaseolus vulgaris L.) is the world’s most important legume for human consumption. Anthracnose (ANT; Colletotrichum lindemuthianum) and angular leaf spot (ALS; Pseudocercospora griseola) are complex diseases that cause major yield losses in common bean. Depending on the cultivar and environmental conditions, anthracnose and angular leaf spot infections can reduce crop yield drastically. This study aimed to estimate linkage disequilibrium levels and identify quantitative resistance loci (QRL) controlling resistance to both ANT and ALS diseases of 180 accessions of common bean using genome-wide association analysis. A randomized complete block design with four replicates was performed for the ANT and ALS experiments, with four plants per genotype in each replicate. Association mapping analyses were performed for ANT and ALS using a mixed linear model approach implemented in TASSEL. A total of 17 and 11 significant statistically associations involving SSRs were detected for ANT and ALS resistance loci, respectively. Using SNPs, 21 and 17 significant statistically associations were obtained for ANT and angular ALS, respectively, providing more associations with this marker. The SSR-IAC167 and PvM95 markers, both located on chromosome Pv03, and the SNP scaffold00021_89379, were associated with both diseases. The other markers were distributed across the entire common bean genome, with chromosomes Pv03 and Pv08 showing the greatest number of loci associated with ANT resistance. The chromosome Pv04 was the most saturated one, with six markers associated with ALS resistance. The telomeric region of this chromosome showed four markers located between approximately 2.5 Mb and 4.4 Mb. Our results demonstrate the great potential of genome-wide association studies to identify QRLs related to ANT and ALS in common bean. The results indicate a quantitative and complex inheritance pattern for both diseases in common bean. Our findings will contribute to more effective screening of elite germplasm to find resistance alleles for marker-assisted selection in breeding programs. PMID:26930078

Genome-Wide Association Studies of Anthracnose and Angular Leaf Spot Resistance in Common Bean (Phaseolus vulgaris L.).

PubMed

Perseguini, Juliana Morini Küpper Cardoso; Oblessuc, Paula Rodrigues; Rosa, João Ricardo Bachega Feijó; Gomes, Kleber Alves; Chiorato, Alisson Fernando; Carbonell, Sérgio Augusto Morais; Garcia, Antonio Augusto Franco; Vianello, Rosana Pereira; Benchimol-Reis, Luciana Lasry

2016-01-01

The common bean (Phaseolus vulgaris L.) is the world's most important legume for human consumption. Anthracnose (ANT; Colletotrichum lindemuthianum) and angular leaf spot (ALS; Pseudocercospora griseola) are complex diseases that cause major yield losses in common bean. Depending on the cultivar and environmental conditions, anthracnose and angular leaf spot infections can reduce crop yield drastically. This study aimed to estimate linkage disequilibrium levels and identify quantitative resistance loci (QRL) controlling resistance to both ANT and ALS diseases of 180 accessions of common bean using genome-wide association analysis. A randomized complete block design with four replicates was performed for the ANT and ALS experiments, with four plants per genotype in each replicate. Association mapping analyses were performed for ANT and ALS using a mixed linear model approach implemented in TASSEL. A total of 17 and 11 significant statistically associations involving SSRs were detected for ANT and ALS resistance loci, respectively. Using SNPs, 21 and 17 significant statistically associations were obtained for ANT and angular ALS, respectively, providing more associations with this marker. The SSR-IAC167 and PvM95 markers, both located on chromosome Pv03, and the SNP scaffold00021_89379, were associated with both diseases. The other markers were distributed across the entire common bean genome, with chromosomes Pv03 and Pv08 showing the greatest number of loci associated with ANT resistance. The chromosome Pv04 was the most saturated one, with six markers associated with ALS resistance. The telomeric region of this chromosome showed four markers located between approximately 2.5 Mb and 4.4 Mb. Our results demonstrate the great potential of genome-wide association studies to identify QRLs related to ANT and ALS in common bean. The results indicate a quantitative and complex inheritance pattern for both diseases in common bean. Our findings will contribute to more effective screening of elite germplasm to find resistance alleles for marker-assisted selection in breeding programs.

Jet-hadron correlations relative to the event plane at the LHC with ALICE

NASA Astrophysics Data System (ADS)

Mazer, Joel; Alice Collaboration

2017-11-01

In ultra relativistic heavy-ion collisions at the Large Hadron Collider (LHC), conditions are met to produce a hot, dense and strongly interacting medium known as the Quark Gluon Plasma (QGP). Quarks and gluons from incoming nuclei collide to produce partons at high momenta early in the collisions. By fragmenting into collimated sprays of hadrons, these partons form 'jets'. The outgoing partons scatter and interact with the medium, leading to a manifestation of medium modifications of jets in the final state, known as jet quenching. Within the framework of perturbative QCD, jet production is well understood in pp collisions. We use jets measured in pp interactions as a baseline reference for comparing to heavy-ion collision systems to detect and study jet quenching. The jet quenching mechanism can be studied through the angular correlations of jets with charged hadrons and is examined in transverse momentum (pT) bins of the jets, pT bins of the associated hadrons, and as a function of collision centrality. A robust and precise background subtraction method is used in this analysis to remove the complex, flow dominated, heavy-ion background. The analysis of angular correlations for different orientations of the jet relative to the event plane allows for the study of the path-length dependence of medium modifications to jets. The event plane dependence of azimuthal angular correlations of charged hadrons with respect to the axis of an R = 0.2 reconstructed full (charged + neutral) jet in Pb-Pb collisions at √{sNN} = 2.76 TeV in ALICE is presented. Results are compared for three angular bins of the jet relative to the event plane in mid-peripheral events. The yields relative to the event plane are presented and then quantified through yield ratio calculations. The results show no significant path-length dependence on the medium modifications.

Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

NASA Astrophysics Data System (ADS)

Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

2017-12-01

Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

Comparison of enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives in self-etch mode.

PubMed

Tsujimoto, Akimasa; Barkmeier, Wayne W; Hosoya, Yumiko; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2017-10-01

To comparatively evaluate universal adhesives and two-step self-etch adhesives for enamel bond fatigue durability in self-etch mode. Three universal adhesives (Clearfil Universal Bond; G-Premio Bond; Scotchbond Universal Adhesive) and three two-step self-etch adhesives (Clearfil SE Bond; Clearfil SE Bond 2; OptiBond XTR) were used. The initial shear bond strength and shear fatigue strength of the adhesive to enamel in self-etch mode were determined. The initial shear bond strengths of the universal adhesives to enamel in self-etch mode was significantly lower than those of two-step self-etch adhesives and initial shear bond strengths were not influenced by type of adhesive in each adhesive category. The shear fatigue strengths of universal adhesives to enamel in self-etch mode were significantly lower than that of Clearfil SE Bond and Clearfil SE Bond 2, but similar to that OptiBond XTR. Unlike two-step self-etch adhesives, the initial shear bond strength and shear fatigue strength of universal adhesives to enamel in self-etch mode was not influenced by the type of adhesive. This laboratory study showed that the enamel bond fatigue durability of universal adhesives was lower than Clearfil SE Bond and Clearfil SE Bond 2, similar to Optibond XTR, and was not influenced by type of adhesive, unlike two-step self-etch adhesives.

Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

NASA Astrophysics Data System (ADS)

Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

2018-04-01

A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

Comparative study of resist stabilization techniques for metal etch processing

NASA Astrophysics Data System (ADS)

Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

1999-06-01

This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

Inorganic Bi/In thermal resist as a high-etch-ratio patterning layer for CF4/CHF3/O2 plasma etch

NASA Astrophysics Data System (ADS)

Tu, Yuqiang; Chapman, Glenn H.; Peng, Jun

2004-05-01

Bimetallic thin films containing indium and with low eutectic points, such as Bi/In, have been found to form highly sensitive thermal resists. They can be exposed by lasers with a wide range of wavelengths and be developed by diluted RCA2 solutions. The exposed bimetallic resist Bi/In can work as an etch masking layer for alkaline-based (KOH, TMAH and EDP) "wet" Si anisotropic etching. Current research shows that it can also act as a patterning and masking layer for Si and SiO2 plasma "dry" etch using CF4/CHF3. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In, indicating that laser exposure is an oxidation process. Experiment result shows that single metal Indium film and bilayer Sn/In exhibit thermal resist characteristics but at higher exposure levels. They can be developed in diluted RCA2 solution and used as etch mask layers for Si anisotropic etch and plasma etch.

Controlled in situ etch-back

NASA Technical Reports Server (NTRS)

Mattauch, R. J.; Seabaugh, A. C. (Inventor)

1981-01-01

A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

Method for anisotropic etching in the manufacture of semiconductor devices

NASA Technical Reports Server (NTRS)

Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

Method for anisotropic etching in the manufacture of semiconductor devices

DOEpatents

Koontz, Steven L.; Cross, Jon B.

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

Scanning electron microscopy evaluation of the effect of etching agents on human enamel surface.

PubMed

Zanet, Caio G; Arana-Chavez, Victor E; Fava, Marcelo

2006-01-01

Acid etching promotes microporosities on enamel surface, which provide a better bonding surface to adhesive materials. The purpose of this study was to comparatively analyze the microstructure of enamel surface after etching with 37% phosphoric acid or with two self-etching primers, Non-rinse conditioner (NRC) and Clearfil SE Bond (CSEB) using scanning electron microscopy. Thirty sound premolars were divided into 3 groups with ten teeth each: Group 1: the buccal surface was etched with 37% phosphoric acid for 15 seconds; Group 2: the buccal surface was etched with NRC for 20 seconds; Group 3: the buccal surface was etched with CSEB for 20 seconds. Teeth from Group 1 were rinsed with water; teeth from all groups were air-dried for 15 seconds. After that, all specimens were processed for scanning electron microscopy and analyzed in a Jeol 6100 SEM. The results showed deeper etching when the enamel surface was etched with 37% phosphoric acid, followed by NRC and CSEB. It is concluded that 37% phosphoric acid is still the best agent for a most effective enamel etching.

Enhancement of Device Performances in GaN-Based Light-Emitting Diodes Using Nano-Sized Surface Pit.

PubMed

Yeon, Seunghwan; Son, Taejoon; Shin, Dong Su; Jung, Kyung-Young; Park, Jinsub

2015-07-01

We report the improvement in optical and electrical properties of GaN-based green light-emitting diodes (LEDs) with nano-sized etch pits formed by the surface chemical etching. In order to control the density and sizes of etch pits formed on top surface of green LEDs, H3PO4 solution is used as a etchant with different etching time. When the etching time was increased from 0 min to 20 min, both the etch pit size and density were gradually increased. The improvement of extraction efficiency of LEDs using surface etching method can be attributed to the enlarged escape angle of generated photon by roughened p-GaN surface. The finite-difference time-domain (FDTD) simulation results well agreed with experimentally observed results. Moreover, the LED with etched p-GaN surface for 5 min shows the lowest leakage current value and the further increase of etching time resulting in increase of densities of the large-sized etch pit makes the degradation of electrical properties of LEDs.

Dry etching technologies for reflective multilayer

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Tip-Enhanced Raman Scattering Imaging of Two-Dimensional Tungsten Disulfide with Optimized Tip Fabrication Process.

PubMed

Lee, Chanwoo; Kim, Sung Tae; Jeong, Byeong Geun; Yun, Seok Joon; Song, Young Jae; Lee, Young Hee; Park, Doo Jae; Jeong, Mun Seok

2017-01-13

We successfully achieve the tip-enhanced nano Raman scattering images of a tungsten disulfide monolayer with optimizing a fabrication method of gold nanotip by controlling the concentration of etchant in an electrochemical etching process. By applying a square-wave voltage supplied from an arbitrary waveform generator to a gold wire, which is immersed in a hydrochloric acid solution diluted with ethanol at various ratios, we find that both the conical angle and radius of curvature of the tip apex can be varied by changing the ratio of hydrochloric acid and ethanol. We also suggest a model to explain the origin of these variations in the tip shape. From the systematic study, we find an optimal condition for achieving the yield of ~60% with the radius of ~34 nm and the cone angle of ~35°. Using representative tips fabricated under the optimal etching condition, we demonstrate the tip-enhanced Raman scattering experiment of tungsten disulfide monolayer grown by a chemical vapor deposition method with a spatial resolution of ~40 nm and a Raman enhancement factor of ~4,760.

Efficient hybrid metrology for focus, CD, and overlay

NASA Astrophysics Data System (ADS)

Tel, W. T.; Segers, B.; Anunciado, R.; Zhang, Y.; Wong, P.; Hasan, T.; Prentice, C.

2017-03-01

In the advent of multiple patterning techniques in semiconductor industry, metrology has progressively become a burden. With multiple patterning techniques such as Litho-Etch-Litho-Etch and Sidewall Assisted Double Patterning, the number of processing step have increased significantly and therefore, so as the amount of metrology steps needed for both control and yield monitoring. The amount of metrology needed is increasing in each and every node as more layers needed multiple patterning steps, and more patterning steps per layer. In addition to this, there is that need for guided defect inspection, which in itself requires substantially denser focus, overlay, and CD metrology as before. Metrology efficiency will therefore be cruicial to the next semiconductor nodes. ASML's emulated wafer concept offers a highly efficient method for hybrid metrology for focus, CD, and overlay. In this concept metrology is combined with scanner's sensor data in order to predict the on-product performance. The principle underlying the method is to isolate and estimate individual root-causes which are then combined to compute the on-product performance. The goal is to use all the information available to avoid ever increasing amounts of metrology.

Thermoelectric Micro-Refrigerator Based on Bismuth/Antimony Telluride

NASA Astrophysics Data System (ADS)

Dang, Linh Tuan; Dang, Tung Huu; Nguyen, Thao Thi Thu; Nguyen, Thuat Tran; Nguyen, Hue Minh; Nguyen, Tuyen Viet; Nguyen, Hung Quoc

2017-06-01

Thermoelectric micro-coolers based on bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) are important in many practical applications thanks to their compactness and fluid-free circulation. In this paper, we studied thermoelectric properties of bismuth/antimony telluride (Bi/SbTe) thin films prepared by the thermal co-evaporation method, which yielded among the best thermoelectric quality. Different co-evaporation conditions such as deposition flux ratio of materials and substrate temperature during deposition were investigated to optimize the thermoelectric figure␣of merit of these materials. Micron-size refrigerators were designed and fabricated using standard lithography and etching technique. A three-layer structure was introduced, including a p-type layer, an n-type layer and an aluminum layer. Next to the main cooler, a pair of smaller Bi/SbTe junctions was used as a thermocouple to directly measure electron temperature of the main device. Etching properties of the thermoelectric materials were investigated and optimized to support the fabrication process of the micro-refrigerator. We discuss our results and address possible applications.

Three-dimensional hybrid silicon nanostructures for surface enhanced Raman spectroscopy based molecular detection

NASA Astrophysics Data System (ADS)

Vendamani, V. S.; Nageswara Rao, S. V. S.; Venugopal Rao, S.; Kanjilal, D.; Pathak, A. P.

2018-01-01

Three-dimensional silver nanoparticles decorated vertically aligned Si nanowires (Si NWs) are effective surface-enhanced Raman spectroscopy (SERS) substrates for molecular detection at low concentration levels. The length of Si NWs prepared by silver assisted electroless etching is increased with an increase in etching time, which resulted in the reduced optical reflection in the visible region. These substrates were tested and optimized by measuring the Raman spectrum of standard dye Rhodamine 6G (R6G) of 10 nM concentration. Further, effective SERS enhancements of ˜105 and ˜104 were observed for the cytosine protein (concentration of 50 μM) and ammonium perchlorate (oxidizer used in explosives composition with a concentration of 10 μM), respectively. It is established that these three-dimensional SERS substrates yielded considerably higher enhancement factors for the detection of R6G when compared to previous reports. The sensitivity can further be increased and optimized since the Raman enhancement was found to increase with an increase in the density of silver nanoparticles decorated on the walls of Si NWs.

Preparation of 24 ternary thin film materials libraries on a single substrate in one experiment for irreversible high-throughput studies.

PubMed

Buenconsejo, Pio John S; Siegel, Alexander; Savan, Alan; Thienhaus, Sigurd; Ludwig, Alfred

2012-01-09

For different areas of combinatorial materials science, it is desirable to have multiple materials libraries: especially for irreversible high-throughput studies, like, for example, corrosion resistance testing in different media or annealing of complete materials libraries at different temperatures. Therefore a new combinatorial sputter-deposition process was developed which yields 24 materials libraries in one experiment on a single substrate. It is discussed with the example of 24 Ti-Ni-Ag materials libraries. They are divided based on the composition coverage and orientation of composition gradient into two sets of 12 nearly identical materials libraries. Each materials library covers at least 30-40% of the complete ternary composition range. An acid etch test in buffered-HF solution was performed, illustrating the feasibility of our approach for destructive materials characterization. The results revealed that within the composition range of Ni < 30 at.%, the films were severely etched. The composition range which shows reversible martensitic transformations was confirmed to be outside this region. The high output of the present method makes it attractive for combinatorial studies requiring multiple materials libraries.

Influence of Different Etching Modes on Bond Strength to Enamel using Universal Adhesive Systems.

PubMed

Diniz, Ana Cs; Bandeca, Matheus C; Pinheiro, Larissa M; Dos Santosh Almeida, Lauber J; Torres, Carlos Rg; Borges, Alvaro H; Pinto, Shelon Cs; Tonetto, Mateus R; De Jesus Tavarez, Rudys R; Firoozmand, Leily M

2016-10-01

The adhesive systems and the techniques currently used are designed to provide a more effective adhesion with reduction of the protocol application. The objective of this study was to evaluate the bond strength of universal adhesive systems on enamel in different etching modes (self-etch and total etch). The mesial and distal halves of 52 bovine incisors, healthy, freshly extracted, were used and divided into seven experimental groups (n = 13). The enamel was treated in accordance with the following experimental conditions: FUE-Universal System - Futurabond U (VOCO) with etching; FUWE - Futurabond U (VOCO) without etching; SB-Total Etch System - Single Bond 2 (3M); SBUE-Universal System - Single Bond Universal (3M ESPE) with etching; SBUWE - Single Bond Universal (3M ESPE) without etching; CLE-Self-etch System - Clearfil SE Bond (Kuraray) was applied with etching; CLWE - Clearfil SE Bond (Kuraray) without etching. The specimens were made using the composite spectrum TPH (Dentsply) and stored in distilled water (37 ± 1°C) for 1 month. The microshear test was performed using the universal testing machine EMIC DL 2000 with the crosshead speed of 0.5 mm/minute. The bond strength values were analyzed using statistical tests (Kruskal-Wallis test and Mann-Whitney test) with Bonferroni correction. There was no statistically significant difference between groups (p < 0.05), where FUE (36.83 ± 4.9 MPa) showed the highest bond strength values and SBUWE (18.40 ± 2.2 MPa) showed the lowest bond strength values. The analysis of adhesive interface revealed that most failures occurred between the interface composite resin and adhesive. The universal adhesive system used in dental enamel varies according to the trademark, and the previous enamel etching for universal systems and the self-etch both induced greater bond strength values. Selective enamel etching prior to the application of a universal adhesive system is a relevant strategy for better performance bonding.

Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride

NASA Astrophysics Data System (ADS)

Hatayama, Tomoaki; Tamura, Tetsuya; Yano, Hiroshi; Fuyuki, Takashi

2012-07-01

The etch pit shape of an off-angled 4H-SiC Si-face formed by chlorine trifluoride (ClF3) in nitrogen (N2) ambient has been studied. One type of etch pit with a crooked hexagonal shape was formed at an etching temperature below 500 °C. The angle of the etch pit measured from a cross-sectional atomic force microscopy image was about 10° from the [11bar 20] view. The dislocation type of the etch pit was discussed in relation to the etch pit shape and an electron-beam-induced current image.

Photoelectrochemical fabrication of spectroscopic diffraction gratings, phase 2

NASA Technical Reports Server (NTRS)

Rauh, R. David; Carrabba, Michael M.; Li, Jianguo; Cartland, Robert F.; Hachey, John P.; Mathew, Sam

1990-01-01

This program was directed toward the production of Echelle diffraction gratings by a light-driven, electrochemical etching technique (photoelectrochemical etching). Etching is carried out in single crystal materials, and the differential rate of etching of the different crystallographic planes used to define the groove profiles. Etching of V-groove profiles was first discovered by us during the first phase of this project, which was initially conceived as a general exploration of photoelectrochemical etching techniques for grating fabrication. This highly controllable V-groove etching process was considered to be of high significance for producing low pitch Echelles, and provided the basis for a more extensive Phase 2 investigation.

Low-damage direct patterning of silicon oxide mask by mechanical processing

PubMed Central

2014-01-01

To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated. Particular load ranges were found to increase the etching rate, and the silicon etching rate also increased with removal of the natural oxide layer by diamond tip sliding. In contrast, the local oxide pattern formed (due to mechanochemical reaction of the silicon) by tip sliding at higher load was found to have higher etching resistance than that of unprocessed areas. The profile changes caused by the etching of the mechanically pre-processed areas with the KOH solution were also investigated. First, protuberances were processed by diamond tip sliding at lower and higher stresses than that of the shearing strength. Mechanical processing at low load and scanning density to remove the natural oxide layer was then performed. The KOH solution selectively etched the low load and scanning density processed area first and then etched the unprocessed silicon area. In contrast, the protuberances pre-processed at higher load were hardly etched. The etching resistance of plastic deformed layers was decreased, and their etching rate was increased because of surface damage induced by the pre-processing. These results show that etching depth can be controlled by controlling the etching time through natural oxide layer removal and mechanochemical oxide layer formation. These oxide layer removal and formation processes can be exploited to realize low-damage mask patterns. PMID:24948891

Ion track etching revisited: II. Electronic properties of aged tracks in polymers

NASA Astrophysics Data System (ADS)

Fink, D.; Muñoz Hernández, G.; Cruz, S. A.; Garcia-Arellano, H.; Vacik, J.; Hnatowicz, V.; Kiv, A.; Alfonta, L.

2018-02-01

We compile here electronic ion track etching effects, such as capacitive-type currents, current spike emission, phase shift, rectification and background currents that eventually emerge upon application of sinusoidal alternating voltages across thin, aged swift heavy ion-irradiated polymer foils during etching. Both capacitive-type currents and current spike emission occur as long as obstacles still prevent a smooth continuous charge carrier passage across the foils. In the case of sufficiently high applied electric fields, these obstacles are overcome by spike emission. These effects vanish upon etchant breakthrough. Subsequent transmitted currents are usually of Ohmic type, but shortly after breakthrough (during the track' core etching) often still exhibit deviations such as strong positive phase shifts. They stem from very slow charge carrier mobility across the etched ion tracks due to retarding trapping/detrapping processes. Upon etching the track's penumbra, one occasionally observes a split-up into two transmitted current components, one with positive and another one with negative phase shifts. Usually, these phase shifts vanish when bulk etching starts. Current rectification upon track etching is a very frequent phenomenon. Rectification uses to inverse when core etching ends and penumbra etching begins. When the latter ends, rectification largely vanishes. Occasionally, some residual rectification remains which we attribute to the aged polymeric bulk itself. Last not least, we still consider background currents which often emerge transiently during track etching. We could assign them clearly to differences in the electrochemical potential of the liquids on both sides of the etched polymer foils. Transient relaxation effects during the track etching cause their eventually chaotic behaviour.

Influence of Application Time and Etching Mode of Universal Adhesives on Enamel Adhesion.

PubMed

Sai, Keiichi; Takamizawa, Toshiki; Imai, Arisa; Tsujimoto, Akimasa; Ishii, Ryo; Barkmeier, Wayne W; Latta, Mark A; Miyazaki, Masashi

2018-01-01

To investigate the influence of application time and etching mode of universal adhesives on enamel adhesion. Five universal adhesives, Adhese Universal, Bondmer Lightless, Clearfil Universal Bond Quick, G-Premio Bond, and Scotchbond Universal, were used. Bovine incisors were prepared and divided into four groups of ten teeth each. SBS, Ra, and SFE were determined after the following procedures: 1. self-etch mode with immediate air blowing after application (IA); 2. self-etch mode with prolonged application time (PA); 3. etch-and-rinse mode with IA; 4. etch-and-rinse mode with PA. After 24-h water storage, the bonded assemblies were subjected to shear bond strength (SBS) tests. For surface roughness (Ra) and surface free energy (SFE) measurements, the adhesives were simply applied to the enamel and rinsed with acetone and water before the measurements were carried out. Significantly higher SBS and Ra values were obtained with etch-and-rinse mode than with self-etch mode regardless of the application time or type of adhesive. Although most adhesives showed decreased SFE values with increased application time in self-etch mode, SFE values in etch-and-rinse mode were dependent on the adhesive type and application time. Etching mode, application time, and type of adhesive significantly influenced the SBS, Ra, and SFE values.

Etching and Growth of GaAs

NASA Technical Reports Server (NTRS)

Seabaugh, A. C.; Mattauch, R., J.

1983-01-01

In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

High-performance etching of multilevel phase-type Fresnel zone plates with large apertures

NASA Astrophysics Data System (ADS)

Guo, Chengli; Zhang, Zhiyu; Xue, Donglin; Li, Longxiang; Wang, Ruoqiu; Zhou, Xiaoguang; Zhang, Feng; Zhang, Xuejun

2018-01-01

To ensure the etching depth uniformity of large-aperture Fresnel zone plates (FZPs) with controllable depths, a combination of a point source ion beam with a dwell-time algorithm has been proposed. According to the obtained distribution of the removal function, the latter can be used to optimize the etching time matrix by minimizing the root-mean-square error between the simulation results and the design value. Owing to the convolution operation in the utilized algorithm, the etching depth error is insensitive to the etching rate fluctuations of the ion beam, thereby reducing the requirement for the etching stability of the ion system. As a result, a 4-level FZP with a circular aperture of 300 mm was fabricated. The obtained results showed that the etching depth uniformity of the full aperture could be reduced to below 1%, which was sufficiently accurate for meeting the use requirements of FZPs. The proposed etching method may serve as an alternative way of etching high-precision diffractive optical elements with large apertures.

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

NASA Astrophysics Data System (ADS)

Sakwe, S. A.; Müller, R.; Wellmann, P. J.

2006-04-01

We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Mishkat-Ul-Masabih, Saadat; Leonard, John T.; Feezell, Daniel F.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2017-01-01

We investigate the photo-electrochemical (PEC) etching of Si-doped GaN samples grown on nonpolar GaN substrates, using a KOH/K2S2O8 solution and illuminated by a Xe arc lamp or a Q-switched 355 nm laser. The etch rate with the arc lamp decreased as the doping concentration increased, and the etching stopped for concentrations above 7.7 × 1018 cm-3. The high peak intensity of the Q-switched laser extended the etchable concentration to 2.4 × 1019 cm-3, with an etch rate of 14 nm/min. Compositionally selective etching was demonstrated, with an RMS surface roughness of 1.6 nm after etching down to an n-Al0.20Ga0.80N etch stop layer.

Angular-Rate Estimation Using Delayed Quaternion Measurements

NASA Technical Reports Server (NTRS)

Azor, R.; Bar-Itzhack, I. Y.; Harman, R. R.

1999-01-01

This paper presents algorithms for estimating the angular-rate vector of satellites using quaternion measurements. Two approaches are compared one that uses differentiated quaternion measurements to yield coarse rate measurements, which are then fed into two different estimators. In the other approach the raw quaternion measurements themselves are fed directly into the two estimators. The two estimators rely on the ability to decompose the non-linear part of the rotas rotational dynamics equation of a body into a product of an angular-rate dependent matrix and the angular-rate vector itself. This non unique decomposition, enables the treatment of the nonlinear spacecraft (SC) dynamics model as a linear one and, thus, the application of a PseudoLinear Kalman Filter (PSELIKA). It also enables the application of a special Kalman filter which is based on the use of the solution of the State Dependent Algebraic Riccati Equation (SDARE) in order to compute the gain matrix and thus eliminates the need to compute recursively the filter covariance matrix. The replacement of the rotational dynamics by a simple Markov model is also examined. In this paper special consideration is given to the problem of delayed quaternion measurements. Two solutions to this problem are suggested and tested. Real Rossi X-Ray Timing Explorer (RXTE) data is used to test these algorithms, and results are presented.

Kinetic-energy matrix elements for atomic Hylleraas-CI wave functions.

PubMed

Harris, Frank E

2016-05-28

Hylleraas-CI is a superposition-of-configurations method in which each configuration is constructed from a Slater-type orbital (STO) product to which is appended (linearly) at most one interelectron distance rij. Computations of the kinetic energy for atoms by this method have been difficult due to the lack of formulas expressing these matrix elements for general angular momentum in terms of overlap and potential-energy integrals. It is shown here that a strategic application of angular-momentum theory, including the use of vector spherical harmonics, enables the reduction of all atomic kinetic-energy integrals to overlap and potential-energy matrix elements. The new formulas are validated by showing that they yield correct results for a large number of integrals published by other investigators.

Elastic, inelastic, and 1 n transfer cross sections for the 10B+120Sn reaction

NASA Astrophysics Data System (ADS)

Gasques, L. R.; Freitas, A. S.; Chamon, L. C.; Oliveira, J. R. B.; Medina, N. H.; Scarduelli, V.; Rossi, E. S.; Alvarez, M. A. G.; Zagatto, V. A. B.; Lubian, J.; Nobre, G. P. A.; Padron, I.; Carlson, B. V.

2018-03-01

The 10B+120Sn reaction has been investigated at ELab=37.5 MeV. The cross sections for different channels, such as the elastic scattering, the excitation of the 2+ and 3-120Sn states, the excitation of the 1+ state of 10B, and the 1 n pick-up transfer, have been measured. One-step distorted-wave Born approximation and coupled-reaction-channels calculations have been performed in the context of the double-folding São Paulo potential. The effect of coupling the inelastic and transfer states on the angular distributions is discussed in the paper. In general, the theoretical calculations within the coupled-reaction-channels formalism yield a satisfactory agreement with the corresponding experimental angular distributions.

Photodissociation of HBr/LiF(001): A quantum mechanical model

NASA Technical Reports Server (NTRS)

Seideman, Tamar

1993-01-01

The photodissociation dynamics of HBr adsorbed on a LiF(001) surface is studied using time-independent quantum mechanics. The photodissociation lineshape and the Br(P(sub 1/2)-2)/Br(P(sub 3/2)-2) yield ratio are computed and compared with the corresponding quantities for gas phase photodissociation. The angular distribution of the hydrogen photofragments following excitation of adsorbed HBr is computed and found to agree qualitatively with experimental data. The effect of polarization of the photon is illustrated and discussed. The field polarization is found to affect significantly the magnitude of the photodissociation signal but not the angular dependence of the photofragment distribution, in agreement with experiment and in accord with expectations for a strongly aligned adsorbed phase.

Photodissociation of HBr/LiF(001) - A quantum mechanical model

NASA Technical Reports Server (NTRS)

Seideman, Tamar

1993-01-01

The photodissociation dynamics of HBr adsorbed on an LiF(001) surface is studied using time-independent quantum mechanics. The photodissociation line shape and the Br(2P(1/2))/Br(2P(3/2)) yield ratio are computed and compared with the corresponding quantities for gas phase photodissociation. The angular distribution of the hydrogen photofragments following excitation of adsorbed HBr is computed and found to agree qualitatively with experimental data. The effect of polarization of the photon is illustrated and discussed. We find the field polarization to affect significantly the magnitude of the photodissociation signal but not the angular dependence of the photofragment distribution, in agreement with experiment and in accord with expectations for a strongly aligned adsorbed phase.

Radicals are required for thiol etching of gold particles

PubMed Central

Dreier, Timothy A.

2016-01-01

Etching of gold with excess thiol ligand is used in both synthesis and analysis of gold particles. Mechanistically, the process of etching gold with excess thiol is opaque. Previous studies have obliquely considered the role of oxygen in thiolate etching of gold. Herein, we show that oxygen or a radical initator is a necessary component for efficient etching of gold by thiolates. Attenuation of the etching process by radical scavengers in the presence of oxygen, and the restoration of activity by radical initiators under inert atmosphere, strongly implicate the oxygen radical. These data led us to propose an atomistic mechanism in which the oxygen radical initiates the etching process. PMID:26089294

Etching and oxidation of InAs in planar inductively coupled plasma

NASA Astrophysics Data System (ADS)

Dultsev, F. N.; Kesler, V. G.

2009-10-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

NASA Astrophysics Data System (ADS)

Lee, Kiwon

2018-04-01

Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

Bonding effectiveness of self-etch adhesives to dentin after 24 h water storage.

PubMed

Sarr, Mouhamed; Benoist, Fatou Leye; Bane, Khaly; Aidara, Adjaratou Wakha; Seck, Anta; Toure, Babacar

2018-01-01

This study evaluated the immediate bonding effectiveness of five self-etch adhesive systems bonded to dentin. The microtensile bond strength of five self-etch adhesives systems, including one two-step and four one-step self-etch adhesives to dentin, was measured. Human third molars had their superficial dentin surface exposed, after which a standardized smear layer was produced using a medium-grit diamond bur. The selected adhesives were applied according to their respective manufacturer's instructions for μTBS measurement after storage in water at 37°C for 24 h. The μTBS varied from 11.1 to 44.3 MPa; the highest bond strength was obtained with the two-step self-etch adhesive Clearfil SE Bond and the lowest with the one-step self-etch adhesive Adper Prompt L-Pop. Pretesting failures mainly occurring during sectioning with the slow-speed diamond saw were observed only with the one-step self-etch adhesive Adper Prompt L-Pop (4 out of 18). When bonded to dentin, the self-etch adhesives with simplified application procedures (one-step self-etch adhesives) still underperform as compared to the two-step self-etch adhesive Clearfil SE Bond.

Bonding effectiveness of self-etch adhesives to dentin after 24 h water storage

PubMed Central

Sarr, Mouhamed; Benoist, Fatou Leye; Bane, Khaly; Aidara, Adjaratou Wakha; Seck, Anta; Toure, Babacar

2018-01-01

Purpose: This study evaluated the immediate bonding effectiveness of five self-etch adhesive systems bonded to dentin. Materials and Methods: The microtensile bond strength of five self-etch adhesives systems, including one two-step and four one-step self-etch adhesives to dentin, was measured. Human third molars had their superficial dentin surface exposed, after which a standardized smear layer was produced using a medium-grit diamond bur. The selected adhesives were applied according to their respective manufacturer's instructions for μTBS measurement after storage in water at 37°C for 24 h. Results: The μTBS varied from 11.1 to 44.3 MPa; the highest bond strength was obtained with the two-step self-etch adhesive Clearfil SE Bond and the lowest with the one-step self-etch adhesive Adper Prompt L-Pop. Pretesting failures mainly occurring during sectioning with the slow-speed diamond saw were observed only with the one-step self-etch adhesive Adper Prompt L-Pop (4 out of 18). Conclusions: When bonded to dentin, the self-etch adhesives with simplified application procedures (one-step self-etch adhesives) still underperform as compared to the two-step self-etch adhesive Clearfil SE Bond. PMID:29674814

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2013-10-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45 nm through 14/10 nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2012-03-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Reactive ion etching of GaN using BCl 3, BCl 3/Ar and BCl 3/ N 2 gas plasmas

NASA Astrophysics Data System (ADS)

Basak, D.; Nakanishi, T.; Sakai, S.

2000-04-01

Reactive ion etching (RIE) of GaN has been performed using BCl 3 and additives, Ar and N 2, to BCl 3 plasma. The etch rate, surface roughness and the etch profile have been investigated. The etch rate of GaN is found to be 104 nm/min at rf power of 200 W, pressure of 2 Pa, with 9.5 sccm flow rate of BCl 3. The addition of 5 sccm of Ar to 9.5 sccm of BCl 3 reduces the etch rate of GaN while the addition of N 2 does not influence the etch rate significantly. The RIE of GaN layer with BCl 3/Ar and BCl 3/N 2 results in a smoother surface compared to surfaces etched with BCl 3 only. The etched side-wall in BCl 3 plasma makes an angle of 60° with the normal surface, and the angle of inclination is more in cases of BCl 3/Ar and BCl 3/N 2 plasmas. The RIE induced damage to the surface is measured qualitatively by PL measurements. It is observed that the damage to the etched surfaces is similar for all the plasmas.

Physics and chemistry of complex oxide etching and redeposition control

NASA Astrophysics Data System (ADS)

Margot, Joëlle

2012-10-01

Since its introduction in the 1970s, plasma etching has become the universal method for fine-line pattern transfer onto thin films and is anticipated to remain so in foreseeable future. Despite many success stories, plasma etching processes fail to meet the needs for several of the newest materials involved in advanced devices for photonic, electronic and RF applications like ferroelectrics, electro-optic materials, high-k dielectrics, giant magnetoresistance materials and unconventional conductors. In this context, the work achieved over the last decade on the etching of multicomponent oxides thin films such as barium strontium titanate (BST), strontium titanate (STO) and niobate of calcium and barium (CBN) will be reviewed. These materials present a low reactivity with usual etching gases such as fluorinated and chlorinated gases, their etching is mainly governed by ion sputtering and reactive gases sometimes interact with surface materials to form compounds that inhibit etching. The etching of platinum will also be presented as an example of unconventional conductor materials for which severe redeposition limits the achievable etching quality. Finally, it will be shown how simulation can help to understand the etching mechanisms and to define avenues for higher quality patterning.

Method for dry etching of transition metals

DOEpatents

Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

1998-09-29

A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

Method for dry etching of transition metals

DOEpatents

Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

1998-01-01

A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

Tridimensional morphology and kinetics of etch pit on the {l_brace}0 0 0 1{r_brace} plane of sapphire crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Lunyong; Sun Jianfei, E-mail: jfsun_hit@263.net; Zuo Hongbo

2012-08-15

The tridimensional morphology and etching kinetics of the etch pit on the C-{l_brace}0 0 0 1{r_brace} plane of sapphire crystal ({alpha}-Al{sub 2}O{sub 3}) in molten KOH were studied experimentally. It was shown that the etch pit takes on tridimensional morphologies with triangular symmetry same as the symmetric property of the sapphire crystal. Pits like centric and eccentric triangular pyramid as well as hexagonal pyramid were observed, but the latter is less in density. In-depth analyses show the side walls of the etch pits belong to the {l_brace}1 1{sup Macron} 0 2{sup Macron }{r_brace} family, and the triangular pit contains edgesmore » full composed by Al{sup 3+} ions on the etching surface so it is more stable than the hexagonal pit since its edges on the etching surface contains Al{sup 2+} ions. The etch pits developed in a manner of kinematic wave by the step moving with constant speed, which is controlled by the chemical reaction with activation energy of 96.6 kJ/mol between Al{sub 2}O{sub 3} and KOH. - Graphical abstract: Schematic showing the atomic configuration of the predicted side walls of regular triangular pyramid shaped etch pit on the C-{l_brace}0 0 0 1{r_brace} plane of sapphire crystal. Highlights: Black-Right-Pointing-Pointer Observed the tridimensional morphology of etch pits. Black-Right-Pointing-Pointer Figured out the atomic configuration origin of the etch pits. Black-Right-Pointing-Pointer Quantitatively determined the etch rates of the etch pits.« less

Sealing effectiveness of fissure sealant bonded with universal adhesive systems on saliva-contaminated and noncontaminated enamel

PubMed Central

Shafiei, Fereshteh; Zarean, Mehran; Razmjoei, Faranak

2018-01-01

Background The effectiveness of sealants is dependent upon their adhesion to enamel surface. The aim of the study was to evaluate the sealing ability of a pit and fissure sealant used with a universal adhesive (etch-and-rinse vs. self-etch modes) when the site is contaminated with saliva. Adhesive properties were evaluated as microleakage and scanning electron microscopic (SEM) characteristics. Material and Methods A total of 72 mandibular third molars were randomly divided into 6 groups (n=12). Occlusal pits and fissures were sealed with an unfilled resin fissure sealant (FS) material with or without saliva contamination. The groups included: 1) phosphoric acid etching + FS (control), 2) phosphoric acid etching + Scotchbond Universal (etch-and-rinse) + FS, 3) phosphoric acid etching + saliva + Scotchbond Universal (etch-and-rinse) + FS, 4) Scotchbond Universal (self-etching) + FS,5) Scotchbond Universal (self-etching) + saliva + FS, and 6) Scotchbond Universal (self-etching) + saliva + Scotchbond Universal + FS. After thermocycling, the teeth were placed in 0.5% fuchsin, sectioned, and evaluated by digital microscopy. Two samples from each group were also observed by SEM. The data were analyzed with Kruskal-Wallis and Mann-Whitney tests for a significance of p<0.05. Results There were significant differences among groups. Groups 1,2 and 4 showed the least microleakage, with no significant differences among groups. Saliva contamination led to increased microleakage and gap formation in SEM images in groups 3, 5 and 6. Conclusions The fissure sealing ability of the universal adhesive in etch-and-rinse or self-etch modes was similar to that of conventional acid etching. Saliva contamination had a negative effect on sealant adhesion to pretreated enamel. Key words:Pit and fissure sealant, Universal adhesive, Saliva. PMID:29670708

Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

PubMed

Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

2016-05-01

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

Shear bond strength of self-etch adhesives to enamel with additional phosphoric acid etching.

PubMed

Lührs, Anne-Katrin; Guhr, Silke; Schilke, Reinhard; Borchers, Lothar; Geurtsen, Werner; Günay, Hüsamettin

2008-01-01

This study evaluated the shear bond strength of self-etch adhesives to enamel and the effect of additional phosphoric acid etching. Seventy sound human molars were randomly divided into three test groups and one control group. The enamel surfaces of the control group (n=10) were treated with Syntac Classic (SC). Each test group was subdivided into two groups (each n=10). In half of each test group, ground enamel surfaces were coated with the self-etch adhesives AdheSe (ADH), Xeno III (XE) or Futurabond NR (FNR). In the remaining half of each test group, an additional phosphoric acid etching of the enamel surface was performed prior to applying the adhesives. The shear bond strength was measured with a universal testing machine at a crosshead speed of 1 mm/minute after storing the samples in distilled water at 37 degrees C for 24 hours. Fracture modes were determined by SEM examination. For statistical analysis, one-way ANOVA and the two-sided Dunnett Test were used (p>0.05). Additional phosphoric etching significantly increased the shear bond strength of all the examined self-etch adhesives (p<0.001). The highest shear bond strength was found for FNR after phosphoric acid etching. Without phosphoric acid etching, only FNR showed no significant differences compared to the control (SC). SEM evaluations showed mostly adhesive fractures. For all the self-etch adhesives, a slight increase in mixed fractures occurred after conditioning with phosphoric acid. An additional phosphoric acid etching of enamel should be considered when using self-etch adhesives. More clinical studies are needed to evaluate the long-term success of the examined adhesives.

Sealing effectiveness of fissure sealant bonded with universal adhesive systems on saliva-contaminated and noncontaminated enamel.

PubMed

Memarpour, Mahtab; Shafiei, Fereshteh; Zarean, Mehran; Razmjoei, Faranak

2018-01-01

The effectiveness of sealants is dependent upon their adhesion to enamel surface. The aim of the study was to evaluate the sealing ability of a pit and fissure sealant used with a universal adhesive (etch-and-rinse vs. self-etch modes) when the site is contaminated with saliva. Adhesive properties were evaluated as microleakage and scanning electron microscopic (SEM) characteristics. A total of 72 mandibular third molars were randomly divided into 6 groups (n=12). Occlusal pits and fissures were sealed with an unfilled resin fissure sealant (FS) material with or without saliva contamination. The groups included: 1) phosphoric acid etching + FS (control), 2) phosphoric acid etching + Scotchbond Universal (etch-and-rinse) + FS, 3) phosphoric acid etching + saliva + Scotchbond Universal (etch-and-rinse) + FS, 4) Scotchbond Universal (self-etching) + FS,5) Scotchbond Universal (self-etching) + saliva + FS, and 6) Scotchbond Universal (self-etching) + saliva + Scotchbond Universal + FS. After thermocycling, the teeth were placed in 0.5% fuchsin, sectioned, and evaluated by digital microscopy. Two samples from each group were also observed by SEM. The data were analyzed with Kruskal-Wallis and Mann-Whitney tests for a significance of p <0.05. There were significant differences among groups. Groups 1,2 and 4 showed the least microleakage, with no significant differences among groups. Saliva contamination led to increased microleakage and gap formation in SEM images in groups 3, 5 and 6. The fissure sealing ability of the universal adhesive in etch-and-rinse or self-etch modes was similar to that of conventional acid etching. Saliva contamination had a negative effect on sealant adhesion to pretreated enamel. Key words: Pit and fissure sealant, Universal adhesive, Saliva.

Longevity of Self-etch Dentin Bonding Adhesives Compared to Etch-and-rinse Dentin Bonding Adhesives: A Systematic Review.

PubMed

Masarwa, Nader; Mohamed, Ahmed; Abou-Rabii, Iyad; Abu Zaghlan, Rawan; Steier, Liviu

2016-06-01

A systematic review and meta-analysis were performed to compare longevity of Self-Etch Dentin Bonding Adhesives to Etch-and-Rinse Dentin Bonding Adhesives. The following databases were searched for PubMed, MEDLINE, Web of Science, CINAHL, the Cochrane Library complemented by a manual search of the Journal of Adhesive Dentistry. The MESH keywords used were: "etch and rinse," "total etch," "self-etch," "dentin bonding agent," "bond durability," and "bond degradation." Included were in-vitro experimental studies performed on human dental tissues of sound tooth structure origin. The examined Self-Etch Bonds were of two subtypes; Two Steps and One Step Self-Etch Bonds, while Etch-and-Rinse Bonds were of two subtypes; Two Steps and Three Steps. The included studies measured micro tensile bond strength (μTBs) to evaluate bond strength and possible longevity of both types of dental adhesives at different times. The selected studies depended on water storage as the aging technique. Statistical analysis was performed for outcome measurements compared at 24 h, 3 months, 6 months and 12 months of water storage. After 24 hours (p-value = 0.051), 3 months (p-value = 0.756), 6 months (p-value=0.267), 12 months (p-value=0.785) of water storage self-etch adhesives showed lower μTBs when compared to the etch-and-rinse adhesives, but the comparisons were statistically insignificant. In this study, longevity of Dentin Bonds was related to the measured μTBs. Although Etch-and-Rinse bonds showed higher values at all times, the meta-analysis found no difference in longevity of the two types of bonds at the examined aging times. Copyright © 2016 Elsevier Inc. All rights reserved.

Ion beam texturing of surfaces

NASA Technical Reports Server (NTRS)

Kaufman, H. R.; Robinson, R. S.

1979-01-01

Textured surfaces, typically with conical structures, have been produced previously by simultaneously etching a surface and seeding that surface with another material. A theory based on surface diffusion predicts a variation in cone spacing with surface temperature, as well as a critical temperature below which cones will not form. Substantial agreement with theory has been found for several combinations of seed and surface materials, including one with a high sputter yield seed on a low sputter yield surface (gold on aluminum). Coning with this last combination was predicted by the theory for a sufficiently mobile seed material. The existence of a minimum temperature for the formation of cones should also be important to those interested in ion-beam machining smooth surfaces. Elements contained in the environmental contaminants or in the sputtered alloys or compounds may serve as seed material.

Spectral characterization of laser-accelerated protons with CR-39 nuclear track detector.

PubMed

Seimetz, M; Bellido, P; García, P; Mur, P; Iborra, A; Soriano, A; Hülber, T; García López, J; Jiménez-Ramos, M C; Lera, R; Ruiz-de la Cruz, A; Sánchez, I; Zaffino, R; Roso, L; Benlloch, J M

2018-02-01

CR-39 nuclear track material is frequently used for the detection of protons accelerated in laser-plasma interactions. The measurement of track densities allows for determination of particle angular distributions, and information on the kinetic energy can be obtained by the use of passive absorbers. We present a precise method of measuring spectral distributions of laser-accelerated protons in a single etching and analysis process. We make use of a one-to-one relation between proton energy and track size and present a precise calibration based on monoenergetic particle beams. While this relation is limited to proton energies below 1 MeV, we show that the range of spectral measurements can be significantly extended by simultaneous use of absorbers of suitable thicknesses. Examples from laser-plasma interactions are presented, and quantitative results on proton energies and particle numbers are compared to those obtained from a time-of-flight detector. The spectrum end points of continuous energy distributions have been determined with both detector types and coincide within 50-100 keV.

Fabrication of MEMS components using ultrafine-grained aluminium alloys

NASA Astrophysics Data System (ADS)

Qiao, Xiao Guang; Gao, Nong; Moktadir, Zakaria; Kraft, Michael; Starink, Marco J.

2010-04-01

A novel process for the fabrication of a microelectromechanical systems (MEMS) metallic component with features smaller than 10 µm and high thermal conductivity was investigated. This may be applied to new or improved microscale components, such as (micro-) heat exchangers. In the first stage of processing, equal channel angular pressing (ECAP) was employed to refine the grain size of commercial purity aluminium (Al-1050) to the ultrafine-grained (UFG) material. Embossing was conducted using a micro silicon mould fabricated by deep reactive ion etching (DRIE). Both cold embossing and hot embossing were performed on the coarse-grained and UFG Al-1050. Cold embossing on UFG Al-1050 led to a partially transferred pattern from the micro silicon mould and high failure rate of the mould. Hot embossing on UFG Al-1050 provided a smooth embossed surface with a fully transferred pattern and a low failure rate of the mould, while hot embossing on the coarse-grained Al-1050 resulted in a rougher surface with shear bands.

Deep and tapered silicon photonic crystals for achieving anti-reflection and enhanced absorption.

PubMed

Hung, Yung-Jr; Lee, San-Liang; Coldren, Larry A

2010-03-29

Tapered silicon photonic crystals (PhCs) with smooth sidewalls are realized using a novel single-step deep reactive ion etching. The PhCs can significantly reduce the surface reflection over the wavelength range between the ultra-violet and near-infrared regions. From the measurements using a spectrophotometer and an angle-variable spectroscopic ellipsometer, the sub-wavelength periodic structure can provide a broad and angular-independent antireflective window in the visible region for the TE-polarized light. The PhCs with tapered rods can further reduce the reflection due to a gradually changed effective index. On the other hand, strong optical resonances for TM-mode can be found in this structure, which is mainly due to the existence of full photonic bandgaps inside the material. Such resonance can enhance the optical absorption inside the silicon PhCs due to its increased optical paths. With the help of both antireflective and absorption-enhanced characteristics in this structure, the PhCs can be used for various applications.

The research on conformal acid etching process of glass ceramic

NASA Astrophysics Data System (ADS)

Wang, Kepeng; Guo, Peiji

2014-08-01

A series of experiments have been done to explore the effect of different conditions on the hydrofluoric acid etching. The hydrofluoric acid was used to etch the glass ceramic called "ZERODUR", which is invented by SCHOTT in Germany. The glass ceramic was processed into cylindrical samples. The hydrofluoric acid etching was done in a plastic beaker. The concentration of hydrofluoric acid and the etching time were changed to measure the changes of geometric tolerance and I observed the surface using a microscope in order to find an appropriate condition of hydrofluoric acid etching.

Characterization of the porosity of human dental enamel and shear bond strength in vitro after variable etch times: initial findings using the BET method.

PubMed

Nguyen, Trang T; Miller, Arthur; Orellana, Maria F

2011-07-01

(1) To quantitatively characterize human enamel porosity and surface area in vitro before and after etching for variable etching times; and (2) to evaluate shear bond strength after variable etching times. Specifically, our goal was to identify the presence of any correlation between enamel porosity and shear bond strength. Pore surface area, pore volume, and pore size of enamel from extracted human teeth were analyzed by Brunauer-Emmett-Teller (BET) gas adsorption before and after etching for 15, 30, and 60 seconds with 37% phosphoric acid. Orthodontic brackets were bonded with Transbond to the samples with variable etch times and were subsequently applied to a single-plane lap shear testing system. Pore volume and surface area increased after etching for 15 and 30 seconds. At 60 seconds, this increase was less pronounced. On the contrary, pore size appears to decrease after etching. No correlation was found between variable etching times and shear strength. Samples etched for 15, 30, and 60 seconds all demonstrated clinically viable shear strength values. The BET adsorption method could be a valuable tool in enhancing our understanding of enamel characteristics. Our findings indicate that distinct quantitative changes in enamel pore architecture are evident after etching. Further testing with a larger sample size would have to be carried out for more definitive conclusions to be made.

Anisotropic etching of silicon in solutions containing tensioactive compounds

NASA Astrophysics Data System (ADS)

Zubel, Irena

2016-12-01

The results of investigations concerning anisotropic etching in 3M KOH and 25% TMAH solutions modified by tensioactive compounds such as alcohols, diols and a typical surfactant Triton X100 have been compared. Etching anisotropy was assessed on the basis of etch rates ratio V(110)/V(100). It was stated that the relation between surface tension of the solutions and etch rates of particular planes depend not only on the kind of surfactant but also on the kind of etching solution (KOH, TMAH). It points out an important role of TMA+ ions in the etching process, probably in the process of forming an adsorption layer, consisting of the molecules of tensioactive compounds on Si surface, which decides about etch rate. We have observed that this phenomenon occurs only at high concentration of TMA+ ions (25% TMAH). Reduction of TMAH concentration changes the properties of surfactant containing TMAH solutions. From all investigated solutions, the solutions that assured developing of (110) plane inclined at the angle of 45° to (100) substrate were selected. Such planes can be used as micromirrors in MOEMS structures. The solutions provide the etch rate ratio V(110)/V(100)<0.7, thus they were selected from hydroxide solutions containing surfactants. A simple way for etch rate anisotropy V(110)/V(100) assessment based on microscopic images etched structures has been proposed.

Post-processing of fused silica and its effects on damage resistance to nanosecond pulsed UV lasers.

PubMed

Ye, Hui; Li, Yaguo; Zhang, Qinghua; Wang, Wei; Yuan, Zhigang; Wang, Jian; Xu, Qiao

2016-04-10

HF-based (hydrofluoric acid) chemical etching has been a widely accepted technique to improve the laser damage performance of fused silica optics and ensure high-power UV laser systems at designed fluence. Etching processes such as acid concentration, composition, material removal amount, and etching state (etching with additional acoustic power or not) may have a great impact on the laser-induced damage threshold (LIDT) of treated sample surfaces. In order to find out the effects of these factors, we utilized the Taguchi method to determine the etching conditions that are helpful in raising the LIDT. Our results show that the most influential factors are concentration of etchants and the material etched away from the viewpoint of damage performance of fused silica optics. In addition, the additional acoustic power (∼0.6  W·cm^-2) may not benefit the etching rate and damage performance of fused silica. Moreover, the post-cleaning procedure of etched samples is also important in damage performances of fused silica optics. Different post-cleaning procedures were, thus, experiments on samples treated under the same etching conditions. It is found that the "spraying + rinsing + spraying" cleaning process is favorable to the removal of etching-induced deposits. Residuals on the etched surface are harmful to surface roughness and optical transmission as well as laser damage performance.

Comparison between universal adhesives and two-step self-etch adhesives in terms of dentin bond fatigue durability in self-etch mode.

PubMed

Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

2017-06-01

This aim of this study was to compare universal adhesives and two-step self-etch adhesives in terms of dentin bond fatigue durability in self-etch mode. Three universal adhesives - Clearfil Universal, G-Premio Bond, and Scotchbond Universal Adhesive - and three-two-step self-etch adhesives - Clearfil SE Bond, Clearfil SE Bond 2, and OptiBond XTR - were used. The initial shear bond strength and shear fatigue strength of resin composite bonded to adhesive on dentin in self-etch mode were determined. Scanning electron microscopy observations of fracture surfaces after bond strength tests were also made. The initial shear bond strength of universal adhesives was material dependent, unlike that of two-step self-etch adhesives. The shear fatigue strength of Scotchbond Universal Adhesive was not significantly different from that of two-step self-etch adhesives, unlike the other universal adhesives. The shear fatigue strength of universal adhesives differed depending on the type of adhesive, unlike those of two-step self-etch adhesives. The results of this study encourage the continued use of two-step self-etch adhesive over some universal adhesives but suggest that changes to the composition of universal adhesives may lead to a dentin bond fatigue durability similar to that of two-step self-etch adhesives. © 2017 Eur J Oral Sci.

Single-crystal silicon trench etching for fabrication of highly integrated circuits

NASA Astrophysics Data System (ADS)

Engelhardt, Manfred

1991-03-01

The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

Influence of application method on surface free-energy and bond strength of universal adhesive systems to enamel.

PubMed

Imai, Arisa; Takamizawa, Toshiki; Sai, Keiichi; Tsujimoto, Akimasa; Nojiri, Kie; Endo, Hajime; Barkmeier, Wayne W; Latta, Mark A; Miyazaki, Masashi

2017-10-01

The aim of the present study was to determine the influence of different adhesive application methods and etching modes on enamel bond effectiveness of universal adhesives using shear bond strength (SBS) testing and surface free-energy (SFE) measurements. The adhesives Scotchbond Universal, All-Bond Universal, Adhese Universal, and G-Premio Bond were used. Prepared bovine enamel specimens were divided into four groups, based on type of adhesive, and subjected to the following surface treatments: (i) total-etch mode with active application; (ii) total-etch mode with inactive application; (iii) self-etch mode with active application; and (iv) self-etch mode with inactive application. Bonded specimens were subjected to SBS testing. The SFE of the enamel surfaces with adhesive was measured after rinsing with acetone and water. The SBS values in total-etch mode were significantly higher than those in self-etch mode. In total-etch mode, significantly lower SBS values were observed with active application compared with inactive application; in contrast, in self-etch mode there were no significant differences in SBS between active and inactive applications. A reduction in total SFE was observed for active application compared with inactive application. The interaction between etching mode and application method was statistically significant, and the application method significantly affected enamel bond strength in total-etch mode. © 2017 Eur J Oral Sci.

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Beheim, Glenn M.

2006-01-01

High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

Dry etching technologies for the advanced binary film

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Process margin enhancement for 0.25-μm metal etch process

NASA Astrophysics Data System (ADS)

Lee, Chung Y.; Ma, Wei Wen; Lim, Eng H.; Cheng, Alex T.; Joy, Raymond; Ross, Matthew F.; Wong, Selmer S.; Marlowe, Trey

2000-06-01

This study evaluates electron beam stabilization of UV6, a positive tone Deep-UV (DUV) resist from Shipley, for a 0.25 micrometer metal etch application. Results are compared between untreated resist and resist treated with different levels of electron beam stabilization. The electron beam processing was carried out in an ElectronCureTM flood electron beam exposure system from Honeywell International Inc., Electron Vision. The ElectronCureTM system utilizes a flood electron beam source which is larger in diameter than the substrate being processed, and is capable of variable energy so that the electron range is matched to the resist film thickness. Changes in the UV6 resist material as a result of the electron beam stabilization are monitored via spectroscopic ellipsometry for film thickness and index of refraction changes and FTIR for analysis of chemical changes. Thermal flow stability is evaluated by applying hot plate bakes of 150 degrees Celsius and 200 degrees Celsius, to patterned resist wafers with no treatment and with an electron beam dose level of 2000 (mu) C/cm2. A significant improvement in the thermal flow stability of the patterned UV6 resist features is achieved with the electron beam stabilization process. Etch process performance of the UV6 resist was evaluated by performing a metal pattern transfer process on wafers with untreated resist and comparing these with etch results on wafers with different levels of electron beam stabilization. The etch processing was carried out in an Applied Materials reactor with an etch chemistry including BCl3 and Cl2. All wafers were etched under the same conditions and the resist was treated after etch to prevent further erosion after etch but before SEM analysis. Post metal etch SEM cross-sections show the enhancement in etch resistance provided by the electron beam stabilization process. Enhanced process margin is achieved as a result of the improved etch resistance, and is observed in reduced resist side-wall angles after etch. Only a slight improvement is observed in the isolated to dense bias effects of the etch process. Improved CD control is also achieved by applying the electron beam process, as more consistent CDs are observed after etch.

Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon.

PubMed

Kim, Jeong Dong; Kim, Munho; Kong, Lingyu; Mohseni, Parsian K; Ranganathan, Srikanth; Pachamuthu, Jayavel; Chim, Wai Kin; Chiam, Sing Yang; Coleman, James J; Li, Xiuling

2018-03-14

Defying text definitions of wet etching, metal-assisted chemical etching (MacEtch), a solution-based, damage-free semiconductor etching method, is directional, where the metal catalyst film sinks with the semiconductor etching front, producing 3D semiconductor structures that are complementary to the metal catalyst film pattern. The same recipe that works perfectly to produce ordered array of nanostructures for single-crystalline Si (c-Si) fails completely when applied to polycrystalline Si (poly-Si) with the same doping type and level. Another long-standing challenge for MacEtch is the difficulty of uniformly etching across feature sizes larger than a few micrometers because of the nature of lateral etching. The issue of interface control between the catalyst and the semiconductor in both lateral and vertical directions over time and over distance needs to be systematically addressed. Here, we present a self-anchored catalyst (SAC) MacEtch method, where a nanoporous catalyst film is used to produce nanowires through the pinholes, which in turn physically anchor the catalyst film from detouring as it descends. The systematic vertical etch rate study as a function of porous catalyst diameter from 200 to 900 nm shows that the SAC-MacEtch not only confines the etching direction but also enhances the etch rate due to the increased liquid access path, significantly delaying the onset of the mass-transport-limited critical diameter compared to nonporous catalyst c-Si counterpart. With this enhanced mass transport approach, vias on multistacks of poly-Si/SiO 2 are also formed with excellent vertical registry through the polystack, even though they are separated by SiO 2 which is readily removed by HF alone with no anisotropy. In addition, 320 μm square through-Si-via (TSV) arrays in 550 μm thick c-Si are realized. The ability of SAC-MacEtch to etch through poly/oxide/poly stack as well as more than half millimeter thick silicon with excellent site specificity for a wide range of feature sizes has significant implications for 2.5D/3D photonic and electronic device applications.

SHI induced nano track polymer filters and characterization

NASA Astrophysics Data System (ADS)

Vijay, Y. K.

2009-07-01

Swift heavy ion irradiation produces damage in polymers in the form of latent tracks. Latent tracks can be enlarged by etching it in a suitable etchant and thus nuclear track etch membrane can be formed for gas permeation / purification in particular for hydrogen where the molecular size is very small. By applying suitable and controlled etching conditions well defined tracks can be formed for specific applications of the membranes. After etching gas permeation method is used for characterizing the tracks. In the present work polycarbonate (PC) of various thickness were irradiated with energetic ion beam at Inter University Accelerator Centre (IUAC), New Delhi. Nuclear tracks were modified by etching the PC in 6N NaOH at 60 (±1) °C from both sides for different times to produce track etch membranes. At critical etch time the etched pits from both the sides meet a rapid increase in gas permeation was observed. Permeability of hydrogen and carbon dioxide has been measured in samples etched for different times. The latent tracks produced by SHI irradiation in the track etch membranes show enhancement of free volume of the polymer. Nano filters are separation devices for the mixture of gases, different ions in the solution and isotopes and isobars separations. The polymer thin films with controlled porosity finding it self as best choice. However, the permeability and selectivity of these polymer based membrane filters are very important at the nano scale separation. The Swift Heavy Ion (SHI) induced nuclear track etched polymeric films with controlled etching have been attempted and characterized as nano scale filters.

Effects of hard mask etch on final topography of advanced phase shift masks

NASA Astrophysics Data System (ADS)

Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

2017-07-01

Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

Radicals Are Required for Thiol Etching of Gold Particles.

PubMed

Dreier, Timothy A; Ackerson, Christopher J

2015-08-03

Etching of gold with an excess of thiol ligand is used in both synthesis and analysis of gold particles. Mechanistically, the process of etching gold with excess thiol is unclear. Previous studies have obliquely considered the role of oxygen in thiolate etching of gold. Herein, we show that oxygen or a radical initiator is a necessary component for efficient etching of gold by thiolates. Attenuation of the etching process by radical scavengers in the presence of oxygen, and the restoration of activity by radical initiators under inert atmosphere, strongly implicate the oxygen radical. These data led us to propose an atomistic mechanism in which the oxygen radical initiates the etching process. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Etching fission tracks in zircons

USGS Publications Warehouse

Naeser, C.W.

1969-01-01

A new technique has been developed whereby fission tracks can be etched in zircon with a solution of sodium hydroxide at 220??C. Etching time varied between 15 minutes and 5 hours. Colored zircon required less etching time than the colorless varieties.

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

2014-08-04

Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

Modification of the Surface Topography and Composition of Ultrafine and Coarse Grained Titanium by Chemical Etching.

PubMed

Nazarov, Denis V; Zemtsova, Elena G; Solokhin, Alexandr Yu; Valiev, Ruslan Z; Smirnov, Vladimir M

2017-01-13

In this study, we present the detailed investigation of the influence of the etching medium (acidic or basic Piranha solutions) and the etching time on the morphology and surface relief of ultrafine grained (UFG) and coarse grained (CG) titanium. The surface relief and morphology have been studied by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and the spectral ellipsometry. The composition of the samples has been determined by X-ray fluorescence analysis (XRF) and X-ray Photoelectron Spectroscopy (XPS). Significant difference in the etching behavior of UFG and CG titanium has been found. UFG titanium exhibits higher etching activity independently of the etching medium. Formed structures possess higher homogeneity. The variation of the etching medium and time leads to micro-, nano-, or hierarchical micro/nanostructures on the surface. Significant difference has been found between surface composition for UFG titanium etched in basic and acidic Piranha solution. Based on the experimental data, the possible reasons and mechanisms are considered for the formation of nano- and microstructures. The prospects of etched UFG titanium as the material for implants are discussed.

Ion-enhanced chemical etching of ZrO2 in a chlorine discharge

NASA Astrophysics Data System (ADS)

Sha, Lin; Cho, Byeong-Ok; Chang, Jane P.

2002-09-01

Chlorine plasma is found to chemically etch ZrO2 thin films in an electron cyclotron resonance reactor, and the etch rate scaled linearly with the square root of ion energy at high ion energies with a threshold energy between 12-20 eV. The etching rate decreased monotonically with increasing chamber pressures, which corresponds to reduced electron temperatures. Optical emission spectroscopy and quadrupole mass spectrometry were used to identify the reaction etching products. No Zr, O, or ZrCl were detected as etching products, but highly chlorinated zirconium compounds (ZrCl2, ZrCl3, and ZrCl4) and ClO were found to be the dominant etching products. ZrCl3 was the dominant etching products at low ion energies, while ZrCl4 became dominant at higher ion energies. This is consistent with greater momentum transfer and enhanced surface chlorination, as determined by x-ray photoelectron spectroscopy, at increased ion energies. Several ion-enhanced chemical reactions are proposed to contribute to the ZrO2 etching. copyright 2002 American Vacuum Society.

Effect of Hydrofluoric Acid Etching Time on Titanium Topography, Chemistry, Wettability, and Cell Adhesion

PubMed Central

Zahran, R.; Rosales Leal, J. I.; Rodríguez Valverde, M. A.; Cabrerizo Vílchez, M. A.

2016-01-01

Titanium implant surface etching has proven an effective method to enhance cell attachment. Despite the frequent use of hydrofluoric (HF) acid, many questions remain unresolved, including the optimal etching time and its effect on surface and biological properties. The objective of this study was to investigate the effect of HF acid etching time on Ti topography, surface chemistry, wettability, and cell adhesion. These data are useful to design improved acid treatment and obtain an improved cell response. The surface topography, chemistry, dynamic wetting, and cell adhesiveness of polished Ti surfaces were evaluated after treatment with HF acid solution for 0, 2; 3, 5, 7, or 10 min, revealing a time-dependent effect of HF acid on their topography, chemistry, and wetting. Roughness and wetting increased with longer etching time except at 10 min, when roughness increased but wetness decreased. Skewness became negative after etching and kurtosis tended to 3 with longer etching time. Highest cell adhesion was achieved after 5–7 min of etching time. Wetting and cell adhesion were reduced on the highly rough surfaces obtained after 10-min etching time. PMID:27824875

Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer

NASA Astrophysics Data System (ADS)

Brakensiek, Nickolas; Xu, Kui; Sweat, Daniel; Hockey, Mary Ann

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCPs) is one of the most promising patterning technologies for future lithography nodes. However, one of the biggest challenges to DSA is the pattern transfer by plasma etching from BCP to hardmask (HM) because the etch selectivity between BCP and neutral brush layer underneath is usually not high enough to enable robust pattern transfer. This paper will explore the plasma etch conditions of both BCPs and neutral brush layers that may improve selectivity and allow a more robust pattern transfer of DSA patterns into the hardmask layer. The plasma etching parameters that are under investigation include the selection of oxidative or reductive etch chemistries, as well as plasma gas pressure, power, and gas mixture fractions. Investigation into the relationship between BCP/neutral brush layer materials with varying chemical compositions and the plasma etching conditions will be highlighted. The culmination of this work will demonstrate important etch parameters that allow BCPs and neutral brush layers to be etched into the underlying hardmask layer with a large process window.

Modification of the Surface Topography and Composition of Ultrafine and Coarse Grained Titanium by Chemical Etching

PubMed Central

Nazarov, Denis V.; Zemtsova, Elena G.; Solokhin, Alexandr Yu.; Valiev, Ruslan Z.; Smirnov, Vladimir M.

2017-01-01

In this study, we present the detailed investigation of the influence of the etching medium (acidic or basic Piranha solutions) and the etching time on the morphology and surface relief of ultrafine grained (UFG) and coarse grained (CG) titanium. The surface relief and morphology have been studied by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and the spectral ellipsometry. The composition of the samples has been determined by X-ray fluorescence analysis (XRF) and X-ray Photoelectron Spectroscopy (XPS). Significant difference in the etching behavior of UFG and CG titanium has been found. UFG titanium exhibits higher etching activity independently of the etching medium. Formed structures possess higher homogeneity. The variation of the etching medium and time leads to micro-, nano-, or hierarchical micro/nanostructures on the surface. Significant difference has been found between surface composition for UFG titanium etched in basic and acidic Piranha solution. Based on the experimental data, the possible reasons and mechanisms are considered for the formation of nano- and microstructures. The prospects of etched UFG titanium as the material for implants are discussed. PMID:28336849

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis R.; Griffin, Ben

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials.

PubMed

Varghese, Abin; Sharma, Chithra H; Thalakulam, Madhu

2017-03-17

A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology, is of paramount importance in realizing all-two-dimensional logic circuits and to move beyond the silicon scaling limit. In this letter, we demonstrate a scalable and highly controllable microwave plasma based layer engineering strategy for MoS 2 and other vW materials. Using this technique we etch MoS 2 flakes layer-by-layer starting from an arbitrary thickness and area down to the mono- or the few-layer limit. From Raman spectroscopy, atomic force microscopy, photoluminescence spectroscopy, scanning electron microscopy and transmission electron microscopy, we confirm that the structural and morphological properties of the material have not been compromised. The process preserves the pre-etch layer topography and yields a smooth and pristine-like surface. We explore the electrical properties utilising a field effect transistor geometry and find that the mobility values of our samples are comparable to those of the pristine ones. The layer removal does not involve any reactive gasses or chemical reactions and relies on breaking the weak inter-layer vW interaction making it a generic technique for a wide spectrum of layered materials and heterostructures. We demonstrate the wide applicability of the technique by extending it to other systems such as graphene, h-BN and WSe 2 . In addition, using microwave plasma in combination with standard lithography, we illustrate a lateral patterning scheme making this process a potential candidate for large scale device fabrication in addition to layer engineering.

High-indexed Pt 3Ni alloy tetrahexahedral nanoframes evolved through preferential CO etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chenyu; Zhang, Lihua; Yang, Hongzhou

2017-03-07

Here, chemically controlling crystal structures in nanoscale is challenging, yet provides an effective way to improve catalytic performances. Pt-based nanoframes are a new class of nanomaterials that have great potential as high-performance catalysts. To date, these nanoframes are formed through acid etching in aqueous solutions, which demands long reaction time and often yields ill-defined surface structures. Herein we demonstrate a robust and unprecedented protocol for facile development of high-performance nanoframe catalysts using size and crystallographic facet-controlled PtNi 4 tetrahexahedral nanocrystals prepared through a colloidal synthesis approach as precursors. This new protocol employs the Mond process to preferentially dealloy nickel componentmore » in the <100> direction through carbon monoxide etching of carbon-supported PtNi 4 tetrahexahedral nanocrystals at an elevated temperature. The resultant Pt 3Ni alloy tetrahexahedral nanoframes possess an open, stable, and high-indexed microstructure, containing a segregated Pt thin layer strained to the Pt–Ni alloy surfaces and featuring a down-shift d-band center as revealed by the density functional theory calculations. These nanoframes exhibit much improved catalytic performance, such as high stability under prolonged electrochemical potential cycles, promoting direct electro-oxidation of formic acid to carbon dioxide and enhancing oxygen reduction reaction activities. Because carbon monoxide can be generated from the carbon support through thermal annealing in air, a common process for pretreating supported catalysts, the developed approach can be easily adopted for preparing industrial scale catalysts that are made of Pt–Ni and other alloy nanoframes.« less

Real-time plasma control in a dual-frequency, confined plasma etcher

NASA Astrophysics Data System (ADS)

Milosavljević, V.; Ellingboe, A. R.; Gaman, C.; Ringwood, J. V.

2008-04-01

The physics issues of developing model-based control of plasma etching are presented. A novel methodology for incorporating real-time model-based control of plasma processing systems is developed. The methodology is developed for control of two dependent variables (ion flux and chemical densities) by two independent controls (27 MHz power and O2 flow). A phenomenological physics model of the nonlinear coupling between the independent controls and the dependent variables of the plasma is presented. By using a design of experiment, the functional dependencies of the response surface are determined. In conjunction with the physical model, the dependencies are used to deconvolve the sensor signals onto the control inputs, allowing compensation of the interaction between control paths. The compensated sensor signals and compensated set-points are then used as inputs to proportional-integral-derivative controllers to adjust radio frequency power and oxygen flow to yield the desired ion flux and chemical density. To illustrate the methodology, model-based real-time control is realized in a commercial semiconductor dielectric etch chamber. The two radio frequency symmetric diode operates with typical commercial fluorocarbon feed-gas mixtures (Ar/O2/C4F8). Key parameters for dielectric etching are known to include ion flux to the surface and surface flux of oxygen containing species. Control is demonstrated using diagnostics of electrode-surface ion current, and chemical densities of O, O2, and CO measured by optical emission spectrometry and/or mass spectrometry. Using our model-based real-time control, the set-point tracking accuracy to changes in chemical species density and ion flux is enhanced.

Shear bond strength of a new self-adhering flowable composite resin for lithium disilicate-reinforced CAD/CAM ceramic material

PubMed Central

Sancakli, Hande Sar; Sancakli, Erkan; Eren, Meltem Mert; Ozel, Sevda; Yucel, Taner; Yildiz, Esra

2014-01-01

PURPOSE The purpose of this study was to evaluate and compare the effects of different surface pretreatment techniques on the surface roughness and shear bond strength of a new self-adhering flowable composite resin for use with lithium disilicate-reinforced CAD/CAM ceramic material. MATERIALS AND METHODS A total of one hundred thirty lithium disilicate CAD/CAM ceramic plates with dimensions of 6 mm × 4 mm and 3 mm thick were prepared. Specimens were then assigned into five groups (n=26) as follows: untreated control, coating with 30 µm silica oxide particles (Cojet™ Sand), 9.6% hydrofluoric acid etching, Er:YAG laser irradiation, and grinding with a high-speed fine diamond bur. A self-adhering flowable composite resin (Vertise Flow) was applied onto the pre-treated ceramic plates using the Ultradent shear bond Teflon mold system. Surface roughness was measured by atomic force microscopy. Shear bond strength test were performed using a universal testing machine at a crosshead speed of 1 mm/min. Surface roughness data were analyzed by one-way ANOVA and the Tukey HSD tests. Shear bond strength test values were analyzed by Kruskal-Wallis and Mann-Whitney U tests at α=.05. RESULTS Hydrofluoric acid etching and grinding with high-speed fine diamond bur produced significantly higher surface roughness than the other pretreatment groups (P<.05). Hydrofluoric acid etching and silica coating yielded the highest shear bond strength values (P<.001). CONCLUSION Self-adhering flowable composite resin used as repair composite resin exhibited very low bond strength irrespective of the surface pretreatments used. PMID:25551002

Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Landis, Geoffrey A.; Wilt, David M.

1989-01-01

Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

Effects of etch-and-rinse and self-etch adhesives on dentin MMP-2 and MMP-9.

PubMed

Mazzoni, A; Scaffa, P; Carrilho, M; Tjäderhane, L; Di Lenarda, R; Polimeni, A; Tezvergil-Mutluay, A; Tay, F R; Pashley, D H; Breschi, L

2013-01-01

Auto-degradation of collagen matrices occurs within hybrid layers created by contemporary dentin bonding systems, by the slow action of host-derived matrix metalloproteinases (MMPs). This study tested the null hypothesis that there are no differences in the activities of MMP-2 and -9 after treatment with different etch-and-rinse or self-etch adhesives. Tested adhesives were: Adper Scotchbond 1XT (3M ESPE), PQ1 (Ultradent), Peak LC (Ultradent), Optibond Solo Plus (Kerr), Prime&Bond NT (Dentsply) (all 2-step etch-and-rinse adhesives), and Adper Easy Bond (3M ESPE), Tri-S (Kuraray), and Xeno-V (Dentsply) (1-step self-etch adhesives). MMP-2 and -9 activities were quantified in adhesive-treated dentin powder by means of an activity assay and gelatin zymography. MMP-2 and MMP-9 activities were found after treatment with all of the simplified etch-and-rinse and self-etch adhesives; however, the activation was adhesive-dependent. It is concluded that all two-step etch-and-rinse and the one-step self-etch adhesives tested can activate endogenous MMP-2 and MMP-9 in human dentin. These results support the role of endogenous MMPs in the degradation of hybrid layers created by these adhesives.

Improvement in etching rate for epilayer lift-off with surfactant

NASA Astrophysics Data System (ADS)

Wu, Fan-Lei; Horng, Ray-Hua; Lu, Jian-Heng; Chen, Chun-Li; Kao, Yu-Cheng

2013-03-01

In this study, the GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with surfactant as mixture etchant solution to etch AlAs sacrificial layer for the selective wet etching of AlAs sacrificial layer. Addiction surfactants etchant significantly enhance the etching rate in the hydrofluoric acid etching solution. It is because surfactant provides hydrophilicity to change the contact angle with enhances the fluid properties of the mixture etchant between GaAs epilayer and GaAs substrate. Arsine gas was released from the etchant solution because the critical reaction product in semiconductor etching is dissolved arsine gas. Arsine gas forms a bubble, which easily displaces the etchant solution, before the AlAs layer was undercut. The results showed that acetone and hydrofluoric acid ratio of about 1:1 for the fastest etching rate of 13.2 μm / min. The etching rate increases about 4 times compared with pure hydrofluoric acid, moreover can shorten the separation time about 70% of GaAs epilayer with GaAs substrate. The results indicate that etching ratio and stability are improved by mixture etchant solution. It is not only saving the epilayer and the etching solution exposure time, but also reducing the damage to the epilayer structure.

Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

NASA Astrophysics Data System (ADS)

Duluard, C. Y.; Ranson, P.; Pichon, L. E.; Pereira, J.; Oubensaid, E. H.; Lefaucheux, P.; Puech, M.; Dussart, R.

2011-06-01

Deep etching of silicon has been investigated in an inductively coupled plasma etch reactor using short SiCl4/O2 plasma steps to passivate the sidewalls of the etched structures. A study was first carried out to define the appropriate parameters to create, at a substrate temperature of -20 °C, a passivation layer by SiCl4/O2 plasma that resists lateral chemical etching in SF6 plasma. The most efficient passivation layer was obtained for a SiCl4/O2 gas flow ratio of 2:1, a pressure of 1 Pa and a source power of 1000 W. Ex situ analyses on a film deposited with these parameters show that it is very rich in oxygen. Silicon etching processes that alternate SF6 plasma etch steps with SiCl4/O2 plasma passivation steps were then developed. Preliminary tests in pulsed-mode conditions have enabled etch rates greater than 2 µm min-1 with selectivities higher than 220. These results show that it is possible to develop a silicon deep etching process at substrate temperatures around -20 °C that uses low SiCl4 and O2 gas flows instead of conventional fluorocarbon gases for sidewall protection.

Self-etching aspects of a three-step etch-and-rinse adhesive.

PubMed

Bahillo, Jose; Roig, Miguel; Bortolotto, Tissiana; Krejci, Ivo

2013-11-01

The purpose of this study is to assess the marginal adaptation of cavities restored with a three-step etch-and-rinse adhesive, OptiBond FL (OFL) under different application protocols. Twenty-four class V cavities were prepared with half of the margins located in enamel and half in dentin. Cavities were restored with OFL and a microhybrid resin composite (Clearfil AP-X). Three groups (n = 8) that differed in the etching technique were tested with thermomechanical loading, and specimens were subjected to quantitative marginal analysis before and after loading. Micromorphology of etching patters on enamel and dentin were observed with SEM. Data was evaluated with Kruskal-Wallis and Bonferroni post hoc test. Significantly lower percent CM (46.9 ± 19.5) were found after loading on enamel in group 3 compared to group 1 (96.5 ± 5.1) and group 2 (93.1 ± 8.1). However, no significant differences (p = 0.30) were observed on dentin margins. Etching enamel with phosphoric acid but avoiding etching dentin before the application of OFL, optimal marginal adaptation could be obtained, evidencing a self-etching primer effect. A reliable adhesive interface was attained with the application of the three-step etch-and-rinse OFL adhesive with a selective enamel etching, representing an advantage on restoring deep cavities.

Development and Research on the Mechanism of Novel Mist Etching Method for Oxide Thin Films

NASA Astrophysics Data System (ADS)

Kawaharamura, Toshiyuki; Hirao, Takashi

2012-03-01

A novel etching process with etchant mist was developed and applied to oxide thin films such as zinc oxide (ZnO), zinc magnesium oxide (ZnMgO), and indium tin oxide (ITO). By using this process, it was shown that precise control of the etching characteristics is possible with a reasonable etching rate, for example, in the range of 10-100 nm/min, and a fine pattern of high accuracy can also be realized, even though this is usually very difficult by conventional wet etching processes, for ZnO and ZnMgO. The mist etching process was found to be similarly and successfully applied to ITO. The mechanism of mist etching has been studied by examining the etching temperature dependence of pattern accuracy, and it was shown that the mechanism was different from that of conventional liquid-phase spray etching. It was ascertained that fine pattern etching was attained using mist droplets completely (or partly) gasified by the heat applied to the substrate. This technique was applied to the fabrication of a ZnO thin-film transistor (TFT) with a ZnO active channel length of 4 µm. The electrical properties of the TFT were found to be excellent with fine uniformity over the entire 4-in. wafer.

Effects of Etch-and-Rinse and Self-etch Adhesives on Dentin MMP-2 and MMP-9

PubMed Central

Mazzoni, A.; Scaffa, P.; Carrilho, M.; Tjäderhane, L.; Di Lenarda, R.; Polimeni, A.; Tezvergil-Mutluay, A.; Tay, F.R.; Pashley, D.H.; Breschi, L.

2013-01-01

Auto-degradation of collagen matrices occurs within hybrid layers created by contemporary dentin bonding systems, by the slow action of host-derived matrix metalloproteinases (MMPs). This study tested the null hypothesis that there are no differences in the activities of MMP-2 and -9 after treatment with different etch-and-rinse or self-etch adhesives. Tested adhesives were: Adper Scotchbond 1XT (3M ESPE), PQ1 (Ultradent), Peak LC (Ultradent), Optibond Solo Plus (Kerr), Prime&Bond NT (Dentsply) (all 2-step etch-and-rinse adhesives), and Adper Easy Bond (3M ESPE), Tri-S (Kuraray), and Xeno-V (Dentsply) (1-step self-etch adhesives). MMP-2 and -9 activities were quantified in adhesive-treated dentin powder by means of an activity assay and gelatin zymography. MMP-2 and MMP-9 activities were found after treatment with all of the simplified etch-and-rinse and self-etch adhesives; however, the activation was adhesive-dependent. It is concluded that all two-step etch-and-rinse and the one-step self-etch adhesives tested can activate endogenous MMP-2 and MMP-9 in human dentin. These results support the role of endogenous MMPs in the degradation of hybrid layers created by these adhesives. PMID:23128110

Exploration of suitable dry etch technologies for directed self-assembly

NASA Astrophysics Data System (ADS)

Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

2012-03-01

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

Laser etching of austenitic stainless steels for micro-structural evaluation

NASA Astrophysics Data System (ADS)

Baghra, Chetan; Kumar, Aniruddha; Sathe, D. B.; Bhatt, R. B.; Behere, P. G.; Afzal, Mohd

2015-06-01

Etching is a key step in metallography to reveal microstructure of polished specimen under an optical microscope. A conventional technique for producing micro-structural contrast is chemical etching. As an alternate, laser etching is investigated since it does not involve use of corrosive reagents and it can be carried out without any physical contact with sample. Laser induced etching technique will be beneficial especially in nuclear industry where materials, being radioactive in nature, are handled inside a glove box. In this paper, experimental results of pulsed Nd-YAG laser based etching of few austenitic stainless steels such as SS 304, SS 316 LN and SS alloy D9 which are chosen as structural material for fabrication of various components of upcoming Prototype Fast Breeder Reactor (PFBR) at Kalpakkam India were reported. Laser etching was done by irradiating samples using nanosecond pulsed Nd-YAG laser beam which was transported into glass paneled glove box using optics. Experiments were carried out to understand effect of laser beam parameters such as wavelength, fluence, pulse repetition rate and number of exposures required for etching of austenitic stainless steel samples. Laser etching of PFBR fuel tube and plug welded joint was also carried to evaluate base metal grain size, depth of fusion at welded joint and heat affected zone in the base metal. Experimental results demonstrated that pulsed Nd-YAG laser etching is a fast and effortless technique which can be effectively employed for non-contact remote etching of austenitic stainless steels for micro-structural evaluation.

On the influence of etch pits in the overall dissolution rate of apatite basal sections

NASA Astrophysics Data System (ADS)

Alencar, Igor; Guedes, Sandro; Palissari, Rosane; Hadler, Julio C.

2015-09-01

Determination of efficiencies for particle detection plays a central role for proper estimation of reaction rates. If chemical etching is employed in the revelation of latent particle tracks in solid-state detectors, dissolution rates and etchable lengths are important factors governing the revelation and observation. In this work, the mask method, where a reference part of the sample is protected during dissolution, was employed to measure step heights in basal sections of apatite etched with a nitric acid, HNO, solution at a concentration of 1.1 M and a temperature of 20 °C. We show a drastic increase in the etching velocity as the number of etch pits in the surface augments, in accordance with the dissolution stepwave model, where the outcrop of each etch pit generates a continuous sequence of stepwaves. The number of etch pits was varied by irradiation with neutrons and perpendicularly incident heavy ions. The size dependence of the etch-pit opening with etching duration for ion (200-300 MeV 152Sm and 238U) tracks was also investigated. There is no distinction for the etch pits between the different ions, and the dissolution seems to be governed by the opening velocity when a high number of etch pits are present in the surface. Measurements of the etchable lengths of these ion tracks show an increase in these lengths when samples are not pre-annealed before irradiation. We discuss the implications of these findings for fission-track modelling.

Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

PubMed

Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

Self-etching adhesive on intact enamel, with and without pre-etching.

PubMed

Devarasa, G M; Subba Reddy, V V; Chaitra, N L; Swarna, Y M

2012-05-01

Bond strengths of composite resin to enamel using self-etch adhesive (SEA) Clearfil SE bond system on intact enamel and enamel pre-etched with phosphoric acid were compared. The objective was to determine if the pre-etching would increase the bond strengths of the SEA systems to intact enamel and to evaluate the effect of pre-etching on bond formation of self-etch adhesives on intact enamel. Labial surfaces of 40 caries free permanent upper central and lateral incisors were cleaned, sectioned of their roots. All specimens were mounted on acrylic block and divided randomly into four groups. In two groups the application of self-etch adhesive, Clearfil SE bond was carried as per manufacturer's instructions, composite cylinders were built, whereas in the other two groups, 37% phosphoric acid etching was done before the application of self-etching adhesives. Then the resin tags were analyzed using scanning electron microscope and shear bond strength was measured using Instron universal testing machine. When phosphoric acid was used, there was significant increase in the depth of penetration of resin tags and in the Shear Bond Strength of composite to enamel. The results indicate that out of both treatment groups, pre-etching the intact enamel with 37% phosphoric acid resulted in formation of longer resin tags and higher depth of penetration of resin tags of the Clearfil SE bond, and attaining higher bond strength of the Clearfil SE bond to intact enamel. Copyright © 2011 Wiley Periodicals, Inc.

Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

PubMed Central

Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

2016-01-01

Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.05

0.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a highly significant result (p<.001). GrD2 had a mean dentinal tubule diameter of 2.78μm and GrD3 of 1.09μm. Conclusion The present study revealed type I etching pattern after acid etching, while type III etching pattern in enamel after laser etching. The lased dentin showed preferential removal of intertubular dentin while acid etching had more effect on the peritubular dentin. No significant differences was observed in removal of smear layer between the acid etched and lased groups. Although diameter of the exposed dentinal tubules was lesser after lased treatment in comparison to acid etching, further long term in vivo studies are needed with different parameters to establish the usage of Er,Cr:YSGG as a sole etching agent. PMID:27437337

Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures

NASA Astrophysics Data System (ADS)

Dunaev, A. V.; Murin, D. B.

2018-04-01

Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.

Two-year clinical trial of a universal adhesive in total-etch and self-etch mode in non-carious cervical lesions☆

PubMed Central

Lawson, Nathaniel C.; Robles, Augusto; Fu, Chin-Chuan; Lin, Chee Paul; Sawlani, Kanchan; Burgess, John O.

2016-01-01

Objectives To compare the clinical performance of Scotchbond™ Universal Adhesive used in self- and total-etch modes and two-bottle Scotchbond™ Multi-purpose Adhesive in total-etch mode for Class 5 non-carious cervical lesions (NCCLs). Methods 37 adults were recruited with 3 or 6 NCCLs (>1.5 mm deep). Teeth were isolated, and a short cervical bevel was prepared. Teeth were restored randomly with Scotchbond Universal total-etch, Scotchbond Universal self-etch or Scotchbond Multi-purpose followed with a composite resin. Restorations were evaluated at baseline, 6, 12 and 24 months for marginal adaptation, marginal discoloration, secondary caries, and sensitivity to cold using modified USPHS Criteria. Patients and evaluators were blinded. Logistic and linear regression models using a generalized estimating equation were applied to evaluate the effects of time and adhesive material on clinical assessment outcomes over the 24 month follow-up period. Kaplan–Meier method was used to compare the retention between adhesive materials. Results Clinical performance of all adhesive materials deteriorated over time for marginal adaptation, and discoloration (p <0.0001). Both Scotchbond Universal self-etch and Scotchbond Multi-purpose materials were more than three times as likely to contribute to less satisfying performance in marginal discoloration over time than Scotchbond Universal total-etch. The retention rates up to 24 months were 87.6%, 94.9% and 100% for Scotchbond Multi-purpose and Scotchbond Universal self-etch and total-etch, respectively. Conclusions Scotchbond Universal in self- and total- etch modes performed similar to or better than Scotchbond Multipurpose, respectively. Clinical significance 24 month evaluation of a universal adhesive indicates acceptable clinical performance, particularly in a total-etch mode. PMID:26231300

Effect of source frequency and pulsing on the SiO2 etching characteristics of dual-frequency capacitive coupled plasma

NASA Astrophysics Data System (ADS)

Kim, Hoe Jun; Jeon, Min Hwan; Mishra, Anurag Kumar; Kim, In Jun; Sin, Tae Ho; Yeom, Geun Young

2015-01-01

A SiO2 layer masked with an amorphous carbon layer (ACL) has been etched in an Ar/C4F8 gas mixture with dual frequency capacitively coupled plasmas under variable frequency (13.56-60 MHz)/pulsed rf source power and 2 MHz continuous wave (CW) rf bias power, the effects of the frequency and pulsing of the source rf power on the SiO2 etch characteristics were investigated. By pulsing the rf power, an increased SiO2 etch selectivity was observed with decreasing SiO2 etch rate. However, when the rf power frequency was increased, not only a higher SiO2 etch rate but also higher SiO2 etch selectivity was observed for both CW and pulse modes. A higher CF2/F ratio and lower electron temperature were observed for both a higher source frequency mode and a pulsed plasma mode. Therefore, when the C 1s binding states of the etched SiO2 surfaces were investigated using X-ray photoelectron spectroscopy (XPS), the increase of C-Fx bonding on the SiO2 surface was observed for a higher source frequency operation similar to a pulsed plasma condition indicating the increase of SiO2 etch selectivity over the ACL. The increase of the SiO2 etch rate with increasing etch selectivity for the higher source frequency operation appears to be related to the increase of the total plasma density with increasing CF2/F ratio in the plasma. The SiO2 etch profile was also improved not only by using the pulsed plasma but also by increasing the source frequency.

Effect of Saliva on the Tensile Bond Strength of Different Generation Adhesive Systems: An In-Vitro Study.

PubMed

Gupta, Nimisha; Tripathi, Abhay Mani; Saha, Sonali; Dhinsa, Kavita; Garg, Aarti

2015-07-01

Newer development of bonding agents have gained a better understanding of factors affecting adhesion of interface between composite and dentin surface to improve longevity of restorations. The present study evaluated the influence of salivary contamination on the tensile bond strength of different generation adhesive systems (two-step etch-and-rinse, two-step self-etch and one-step self-etch) during different bonding stages to dentin where isolation is not maintained. Superficial dentin surfaces of 90 extracted human molars were randomly divided into three study Groups (Group A: Two-step etch-and-rinse adhesive system; Group B: Two-step self-etch adhesive system and Group C: One-step self-etch adhesive system) according to the different generation of adhesives used. According to treatment conditions in different bonding steps, each Group was further divided into three Subgroups containing ten teeth in each. After adhesive application, resin composite blocks were built on dentin and light cured subsequently. The teeth were then stored in water for 24 hours before sending for testing of tensile bond strength by Universal Testing Machine. The collected data were then statistically analysed using one-way ANOVA and Tukey HSD test. One-step self-etch adhesive system revealed maximum mean tensile bond strength followed in descending order by Two-step self-etch adhesive system and Two-step etch-and-rinse adhesive system both in uncontaminated and saliva contaminated conditions respectively. Unlike One-step self-etch adhesive system, saliva contamination could reduce tensile bond strength of the two-step self-etch and two-step etch-and-rinse adhesive system. Furthermore, the step of bonding procedures and the type of adhesive seems to be effective on the bond strength of adhesives contaminated with saliva.

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brizard, Alain J.; Tronci, Cesare

The variational formulations of guiding-center Vlasov-Maxwell theory based on Lagrange, Euler, and Euler-Poincaré variational principles are presented. Each variational principle yields a different approach to deriving guiding-center polarization and magnetization effects into the guiding-center Maxwell equations. The conservation laws of energy, momentum, and angular momentum are also derived by Noether method, where the guiding-center stress tensor is now shown to be explicitly symmetric.

Tagged Neutron Source for API Inspection Systems with Greatly Enhanced Spatial Resolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2012-06-04

We recently developed induced fission and transmission imaging methods with time- and directionally-tagged neutrons offer new capabilities for characterization of fissile material configurations and enhanced detection of special nuclear materials (SNM). An Advanced Associated Particle Imaging (API) generator with higher angular resolution and neutron yield than existing systems is needed to fully exploit these methods.

Immediate bonding properties of universal adhesives to dentine.

PubMed

Muñoz, Miguel Angel; Luque, Issis; Hass, Viviane; Reis, Alessandra; Loguercio, Alessandro Dourado; Bombarda, Nara Hellen Campanha

2013-05-01

To evaluate the dentine microtensile bond strength (μTBS), nanoleakage (NL), degree of conversion (DC) within the hybrid layer for etch-and-rinse and self-etch strategies of universal simplified adhesive systems. forty caries free extracted third molars were divided into 8 groups for μTBS (n=5), according to the adhesive and etching strategy: Clearfil SE Bond [CSE] and Adper Single Bond 2 [SB], as controls; Peak Universal Adhesive System, self-etch [PkSe] and etch-and-rinse [PkEr]; Scotchbond Universal Adhesive, self-etch [ScSe] and etch-and-rinse [ScEr]; All Bond Universal, self-etch [AlSe] and etch-and-rinse [AlEr]. After restorations were constructed, specimens were stored in water (37°C/24h) and then resin-dentine sticks were prepared (0.8mm(2)). The sticks were tested under tension at 0.5mm/min. Some sticks from each tooth group were used for DC determination by micro-Raman spectroscopy or nanoleakage evaluation (NL). The pH for each solution was evaluated using a pH metre. Data were analyzed with one-way ANOVA and Tukey's test (α=0.05). For μTBS, only PkSe and PkEr were similar to the respective control groups (p>0.05). AlSe showed the lowest μTBS mean (p<0.05). For NL, ScEr, ScSe, AlSe, and AlEr showed the lowest NL similar to control groups (p<0.05). For DC, only ScSe showed lower DC than the other materials (p<0.05). Performance of universal adhesives was shown to be material-dependent. The results indicate that this new category of universal adhesives used on dentine as either etch-and-rinse or self-etch strategies were inferior as regards at least one of the properties evaluated (μTBS, NL and DC) in comparison with the control adhesives (CSE for self-etch and SB for etch-and-rinse). Copyright © 2013 Elsevier Ltd. All rights reserved.

CR-39 track etching and blow-up method

DOEpatents

Hankins, Dale E.

1987-01-01

This invention is a method of etching tracks in CR-39 foil to obtain uniformly sized tracks. The invention comprises a step of electrochemically etching the foil at a low frequency and a "blow-up" step of electrochemically etching the foil at a high frequency.

Evaluation of microtensile bond strength of self-etching adhesives on normal and caries-affected dentin.

PubMed

Shibata, Shizuma; Vieira, Luiz Clovis Cardoso; Baratieri, Luiz Narciso; Fu, Jiale; Hoshika, Shuhei; Matsuda, Yasuhiro; Sano, Hidehiko

2016-01-01

The purpose of this study was to evaluate the µTBS (microtensile bond strength) of currently available self-etching adhesives with an experimental self-etch adhesive in normal and caries-affected dentin, using a portable hardness measuring device, in order to standardize dentin Knoop hardness. Normal (ND) and caries-affected dentin (CAD) were obtained from twenty human molars with class II natural caries. The following adhesive systems were tested: Mega Bond (MB), a 2-step self-etching adhesive; MTB-200 (MTB), an experimental 1-step self-etching adhesive (1-SEA), and two commercially available one-step self-etching systems, G-Bond Plus (GB) and Adper Easy Bond (EB). MB-ND achieved the highest µTBS (p<0.05). The mean µTBS was statistically lower in CAD than in ND for all adhesives tested (p<0.05), and the 2-step self-etch adhesive achieved better overall performance than the 1-step self-etch adhesives.

Vertical Si nanowire arrays fabricated by magnetically guided metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Chun, Dong Won; Kim, Tae Kyoung; Choi, Duyoung; Caldwell, Elizabeth; Kim, Young Jin; Paik, Jae Cheol; Jin, Sungho; Chen, Renkun

2016-11-01

In this work, vertically aligned Si nanowire arrays were fabricated by magnetically guided metal-assisted directional chemical etching. Using an anodized aluminum oxide template as a shadow mask, nanoscale Ni dot arrays were fabricated on an Si wafer to serve as a mask to protect the Si during the etching. For the magnetically guided chemical etching, we deposited a tri-layer metal catalyst (Au/Fe/Au) in a Swiss-cheese configuration and etched the sample under the magnetic field to improve the directionality of the Si nanowire etching and increase the etching rate along the vertical direction. After the etching, the nanowires were dried with minimal surface-tension-induced aggregation by utilizing a supercritical CO2 drying procedure. High-resolution transmission electron microscopy (HR-TEM) analysis confirmed the formation of single-crystal Si nanowires. The method developed here for producing vertically aligned Si nanowire arrays could find a wide range of applications in electrochemical and electronic devices.

Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching

NASA Astrophysics Data System (ADS)

Oubensaid, E. H.; Duluard, C. Y.; Pichon, L. E.; Pereira, J.; Boufnichel, M.; Lefaucheux, P.; Dussart, R.; Ranson, P.

2009-07-01

The GaN etching by SiCl4 plasma is considered in an ICP tool. By respecting some material limitations, it has been possible to etch the gallium nitride in pure SiCl4 plasma, with an etch rate of 19 nm min-1. This result is comparable to other reported results. Thereafter, the combination of SiCl4 with SF6 and N2 was tested in order to increase the etch rate. The addition of SF6 in the plasma has enabled us to reach an etch rate of 53 nm min-1. However, best results were obtained with the addition of N2, with an increase of the etch rate by a factor of 6. Mass spectrometry was also performed in order to determine the effects of the additional gases. The surface morphology of the GaN was also analysed by scanning electron microscope after etching.

Influence of pretreatment on the surface characteristics of PLLA fibers and subsequent hydroxyapatite coating.

PubMed

Peng, F; Olson, J R; Shaw, M T; Wei, M

2009-01-01

A fibrous precursor for bone repair composites was made by coating poly(L-lactide) (PLLA) fibers with hydroxyapatite (HA) using a biomimetic method. To enhance the bonding between the HA coating and the PLLA fiber, PLLA fibers were etched with either sodium hydroxide or sodium hypochlorite to generate carboxyl groups on fiber surfaces. The experiments were designed to determine the influence of etching on the fiber surface morphology and chemistry as well as the subsequent HA coating on the etched fiber surfaces. It was found that the etching pretreatment increased the roughness as well as the hydrophilicity of fibers, indicating that hydrolysis of PLLA chains had taken place on fiber surfaces. The etching pretreatment also promoted HA coating formation by introducing thicker coating on the surface of fibers with a longer etching time, a higher etching concentration, or with NaOCl as the etching agent. A mechanism of surface hydrolysis and oxidation of PLLA was proposed. (c) 2008 Wiley Periodicals, Inc.

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

PubMed Central

Yusoh, Siti Noorhaniah

2016-01-01

Summary The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM). The obtained results indicate that increased IPA concentration in TMAH produced greater width of the silicon nanowires with a smooth surface. It was also observed that the use of a longer etching time causes more unmasked silicon layers to be removed. Importantly, throughout this study, wet etching with optimized parameters can be applied in the design of the devices with excellent performance for many applications. PMID:27826521

Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma

NASA Astrophysics Data System (ADS)

Shen, Lanlan; Song, Sannian; Song, Zhitang; Li, Le; Guo, Tianqi; Liu, Bo; Wu, Liangcai; Cheng, Yan; Feng, Songlin

2016-10-01

Recently, carbon-doped Ge2Sb2Te5 (CGST) has been proved to be a high promising material for future phase change memory technology. In this article, reactive ion etching (RIE) of phase change material CGST films is studied using CF4/Ar gas mixture. The effects on gas-mixing ratio, RF power, gas pressure on the etch rate, etch profile and roughness of the CGST film are investigated. Conventional phase change material Ge2Sb2Te5 (GST) films are simultaneously studied for comparison. Compared with GST film, 10 % more CF4 is needed for high etch rate and 10% less CF4 for good anisotropy of CGST due to more fluorocarbon polymer deposition during CF4 etching. The trends of etch rates and roughness of CGST with varying RF power and chamber pressure are similar with those of GST. Furthermore, the etch rate of CGST are more easily to be saturated when higher RF power is applied.

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

NASA Astrophysics Data System (ADS)

Kuo, Tai-Chen; Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi; Current, Michael Ira; Samukawa, Seiji

2018-04-01

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching technique were specially designed to demonstrate a "damage-free" condition or to approximate "reactive-ion-etching-like" conditions to verify the effect of plasma-induced damage on electrical characteristics of MOS capacitors. The results show that by neutral beam etching (NBE), the interface state density (Dit) and the oxide trapped charge (Qot) were lower than routine plasma etching. Furthermore, the decrease in capacitor size does not lead to an increase in leakage current density, indicating less plasma induced side-wall damage. We present a plasma-induced gate stack damage model which we demonstrate by using these two different etching configurations. These results show that NBE is effective in preventing plasma-induced damage at the high-k/Si interface and on the high-k oxide sidewall and thus improve the electrical performance of the gate structure.

Wet etching mechanism and crystallization of indium-tin oxide layer for application in light-emitting diodes

NASA Astrophysics Data System (ADS)

Su, Shui-Hsiang; Kong, Hsieng-Jen; Tseng, Chun-Lung; Chen, Guan-Yu

2018-01-01

In the article, we describe the etching mechanism of indium-tin oxide (ITO) film, which was wet-etched using a solution of hydrochloric acid (HCl) and ferric chloride (FeCl3). The etching mechanism is analyzed at various etching durations of ITO films by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and selective area diffraction (SAD) analysis. In comparison with the crystalline phase of SnO2, the In2O3 phase can be more easily transformed to In3+ and can form an inverted conical structure during the etching process. By adjusting the etching duration, the residual ITO is completely removed to show a designed pattern. This is attributed to the negative Gibbs energy of In2O3 transformed to In3+. The result also corresponds to the finding of energy-dispersive X-ray spectroscopy (EDS) analysis that the Sn/In ratio increases with increasing etching duration.

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Nanoparticle-based etching of silicon surfaces

DOEpatents

Branz, Howard [Boulder, CO; Duda, Anna [Denver, CO; Ginley, David S [Evergreen, CO; Yost, Vernon [Littleton, CO; Meier, Daniel [Atlanta, GA; Ward, James S [Golden, CO

2011-12-13

A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

Bremsstrahlung Dose Yield for High-Intensity Short-Pulse Laser–Solid Experiments

DOE PAGES

Liang, Taiee; Bauer, Johannes M.; Liu, James C.; ...

2016-12-01

A bremsstrahlung source term has been developed by the Radiation Protection (RP) group at SLAC National Accelerator Laboratory for high-intensity short-pulse laser–solid experiments between 10 17 and 10 22 W cm –2. This source term couples the particle-in-cell plasma code EPOCH and the radiation transport code FLUKA to estimate the bremsstrahlung dose yield from laser–solid interactions. EPOCH characterizes the energy distribution, angular distribution, and laser-to-electron conversion efficiency of the hot electrons from laser–solid interactions, and FLUKA utilizes this hot electron source term to calculate a bremsstrahlung dose yield (mSv per J of laser energy on target). The goal of thismore » paper is to provide RP guidelines and hazard analysis for high-intensity laser facilities. In conclusion, a comparison of the calculated bremsstrahlung dose yields to radiation measurement data is also made.« less

Bremsstrahlung Dose Yield for High-Intensity Short-Pulse Laser–Solid Experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Taiee; Bauer, Johannes M.; Liu, James C.

A bremsstrahlung source term has been developed by the Radiation Protection (RP) group at SLAC National Accelerator Laboratory for high-intensity short-pulse laser–solid experiments between 10 17 and 10 22 W cm –2. This source term couples the particle-in-cell plasma code EPOCH and the radiation transport code FLUKA to estimate the bremsstrahlung dose yield from laser–solid interactions. EPOCH characterizes the energy distribution, angular distribution, and laser-to-electron conversion efficiency of the hot electrons from laser–solid interactions, and FLUKA utilizes this hot electron source term to calculate a bremsstrahlung dose yield (mSv per J of laser energy on target). The goal of thismore » paper is to provide RP guidelines and hazard analysis for high-intensity laser facilities. In conclusion, a comparison of the calculated bremsstrahlung dose yields to radiation measurement data is also made.« less

BAO from Angular Clustering: Optimization and Mitigation of Theoretical Systematics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crocce, M.; et al.

We study the theoretical systematics and optimize the methodology in Baryon Acoustic Oscillations (BAO) detections using the angular correlation function with tomographic bins. We calibrate and optimize the pipeline for the Dark Energy Survey Year 1 dataset using 1800 mocks. We compare the BAO fitting results obtained with three estimators: the Maximum Likelihood Estimator (MLE), Profile Likelihood, and Markov Chain Monte Carlo. The MLE method yields the least bias in the fit results (bias/spreadmore » $$\\sim 0.02$$) and the error bar derived is the closest to the Gaussian results (1% from 68% Gaussian expectation). When there is mismatch between the template and the data either due to incorrect fiducial cosmology or photo-$z$ error, the MLE again gives the least-biased results. The BAO angular shift that is estimated based on the sound horizon and the angular diameter distance agree with the numerical fit. Various analysis choices are further tested: the number of redshift bins, cross-correlations, and angular binning. We propose two methods to correct the mock covariance when the final sample properties are slightly different from those used to create the mock. We show that the sample changes can be accommodated with the help of the Gaussian covariance matrix or more effectively using the eigenmode expansion of the mock covariance. The eigenmode expansion is significantly less susceptible to statistical fluctuations relative to the direct measurements of the covariance matrix because the number of free parameters is substantially reduced [$p$ parameters versus $p(p+1)/2$ from direct measurement].« less

Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

NASA Astrophysics Data System (ADS)

Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M. P.; Hihn, J. Y.

2015-11-01

Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

Anisotropic Etching Using Reactive Cluster Beams

NASA Astrophysics Data System (ADS)

Koike, Kunihiko; Yoshino, Yu; Senoo, Takehiko; Seki, Toshio; Ninomiya, Satoshi; Aoki, Takaaki; Matsuo, Jiro

2010-12-01

The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF3) gas were examined. An etching rate of 40 µm/min or higher was obtained even at room temperature when a ClF3 molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO2 was at least 1:1000. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process.

Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

PubMed

Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

2012-05-01

A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

Controlled ion track etching

NASA Astrophysics Data System (ADS)

George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

2006-03-01

It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

NASA Astrophysics Data System (ADS)

Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

2000-07-01

In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

Anisotropic Etching of Hexagonal Boron Nitride and Graphene: Question of Edge Terminations.

PubMed

Stehle, Yijing Y; Sang, Xiahan; Unocic, Raymond R; Voylov, Dmitry; Jackson, Roderick K; Smirnov, Sergei; Vlassiouk, Ivan

2017-12-13

Chemical vapor deposition (CVD) has been established as the most effective way to grow large area two-dimensional materials. Direct study of the etching process can reveal subtleties of this competing with the growth reaction and thus provide the necessary details of the overall growth mechanism. Here we investigate hydrogen-induced etching of hBN and graphene and compare the results with the classical kinetic Wulff construction model. Formation of the anisotropically etched holes in the center of hBN and graphene single crystals was observed along with the changes in the crystals' circumference. We show that the edges of triangular holes in hBN crystals formed at regular etching conditions are parallel to B-terminated zigzags, opposite to the N-terminated zigzag edges of hBN triangular crystals. The morphology of the etched hBN holes is affected by a disbalance of the B/N ratio upon etching and can be shifted toward the anticipated from the Wulff model N-terminated zigzag by etching in a nitrogen buffer gas instead of a typical argon. For graphene, etched hexagonal holes are terminated by zigzag, while the crystal circumference is gradually changing from a pure zigzag to a slanted angle resulting in dodecagons.

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

NASA Astrophysics Data System (ADS)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Solid-State Nanopore.

PubMed

Yuan, Zhishan; Wang, Chengyong; Yi, Xin; Ni, Zhonghua; Chen, Yunfei; Li, Tie

2018-02-20

Solid-state nanopore has captured the attention of many researchers due to its characteristic of nanoscale. Now, different fabrication methods have been reported, which can be summarized into two broad categories: "top-down" etching technology and "bottom-up" shrinkage technology. Ion track etching method, mask etching method chemical solution etching method, and high-energy particle etching and shrinkage method are exhibited in this report. Besides, we also discussed applications of solid-state nanopore fabrication technology in DNA sequencing, protein detection, and energy conversion.

Solid-State Nanopore

NASA Astrophysics Data System (ADS)

Yuan, Zhishan; Wang, Chengyong; Yi, Xin; Ni, Zhonghua; Chen, Yunfei; Li, Tie

2018-02-01

Solid-state nanopore has captured the attention of many researchers due to its characteristic of nanoscale. Now, different fabrication methods have been reported, which can be summarized into two broad categories: "top-down" etching technology and "bottom-up" shrinkage technology. Ion track etching method, mask etching method chemical solution etching method, and high-energy particle etching and shrinkage method are exhibited in this report. Besides, we also discussed applications of solid-state nanopore fabrication technology in DNA sequencing, protein detection, and energy conversion.

Microtensile bond strength of eleven contemporary adhesives to enamel.

PubMed

Inoue, Satoshi; Vargas, Marcos A; Abe, Yasuhiko; Yoshida, Yasuhiro; Lambrechts, Paul; Vanherle, Guido; Sano, Hidehiko; Van Meerbeek, Bart

2003-10-01

To compare the microtensile bond strength (microTBS) to enamel of 10 contemporary adhesives, including three one-step self-etch systems, four two-step self-etch systems and three two-step total-etch systems, with that of a conventional three-step total-etch adhesive. Resin composite (Z100, 3M) was bonded to flat, #600-grit wet-sanded enamel surfaces of 18 extracted human third molars using the adhesives strictly according to the respective manufacturer's instructions. After storage overnight in 37 degrees C water, the bonded specimens were sectioned into 2-4 thin slabs of approximately 1 mm thickness and 2.5 mm width. They were then trimmed into an hourglass shape with an interface area of approximately 1 mm2, and subsequently subjected to microTBS-testing with a cross-head speed of 1 mm/minute. The microTBS to enamel varied from 3.2 MPa for the experimental one-step self-etch adhesive PQ/Universal (self-etch) to 43.9 MPa for the two-step total-etch adhesive Scotchbond 1. When compared with the conventional three-step total-etch adhesive OptiBond FL, the bond strengths of most adhesives with simplified application procedures were not significantly different, except for two one-step self-etch adhesives, experimental PQ/Universal (self-etch) and One-up Bond F, that showed lower bond strengths. Specimen failures during sample preparation were recorded for the latter adhesives as well.

Effect of etching on bonding of a self-etch adhesive to dentine affected by amelogenesis imperfecta.

PubMed

Epasinghe, Don Jeevanie; Yiu, Cynthia Kar Yung

2018-02-01

Dentine affected by amelogenesis imperfecta (AI) is histologically altered due to loss of hypoplastic enamel and becomes hypermineralized. In the present study, we examined the effect of additional acid etching on microtensile bond strength of a self-etch adhesive to AI-affected dentine. Flat coronal dentine obtained from extracted AI-affected and non-carious permanent molars were allocated to two groups: (a) Clearfil SE Bond (control); and (b) Clearfil SE Bond and additional etching with 34% phosphoric acid for 15 seconds. The bonded teeth were sectioned into .8-mm 2 beams for microtensile bond strength testing, and stressed to failure under tension. The bond strength data were analyzed using two-way analysis of variance (dentine type and etching step) and Student-Newman-Keuls multiple comparison test (P<.05). Representative fractured beams from each group were examined under scanning electron microscopy. Both factors, dentine substrate (P<.001) and etching step (P<.05), and their interactions (P<.001), were statistically significant. Additional etching had an adverse effect on the bond strength of Clearfil SE Bond to normal dentine (P<.005), and no significant improvement was found for AI-affected dentine (P=.479). Additional acid etching does not improve the bond strength of a self-etch adhesive to AI-affected dentine. © 2017 John Wiley & Sons Australia, Ltd.

Sputtering of uranium

NASA Technical Reports Server (NTRS)

Gregg, R.; Tombrello, T. A.

1978-01-01

Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

Etching method for photoresists or polymers

NASA Technical Reports Server (NTRS)

Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

1991-01-01

A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays.

PubMed

Li, Yantao; Hu, Weida; Ye, Zhenhua; Chen, Yiyu; Chen, Xiaoshuang; Lu, Wei

2017-04-01

Mercury cadmium telluride is the standard material to fabricate high-performance infrared focal plane array (FPA) detectors. However, etch-induced damage is a serious obstacle for realizing highly uniform and damage-free FPA detectors. In this Letter, the high signal-to-noise ratio and high spatial resolution scanning photocurrent microscopy (SPCM) is used to characterize the dry etch-induced inversion layer of vacancy-doped p-type Hg_1-xCd_xTe (x=0.22) material under different etching temperatures. It is found that the peak-to-peak magnitude of the SPCM profile decreases with a decrease in etching temperature, showing direct proof of controlling dry etch-induced type conversion. Our work paves the way toward seeking optimal etching processes in large-scale infrared FPAs.

Cl 2-based dry etching of the AlGaInN system in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Cho, Hyun; Vartuli, C. B.; Abernathy, C. R.; Donovan, S. M.; Pearton, S. J.; Shul, R. J.; Han, J.

1998-12-01

Cl 2-Based inductively coupled plasmas with low additional d.c. self-biases (-100 V) produce convenient etch rates (500-1500 Å·min -1) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas (Ar, N 2, H 2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl 2 in the discharge for all three mixtures and to have an increase (decrease) in etch rate with source power (pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

NASA Astrophysics Data System (ADS)

Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

2017-10-01

Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

Laser-driven fusion etching process

DOEpatents

Ashby, C.I.H.; Brannon, P.J.; Gerardo, J.B.

1987-08-25

The surfaces of solids are etched by a radiation-driven chemical reaction. The process involves exposing a substrate coated with a layer of a reactant material on its surface to radiation, e.g., a laser, to induce localized melting of the substrate which results in the occurrence of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic substrates, e.g., LiNbO/sub 3/, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

Inductively coupled BCl 3/Cl 2 /Ar plasma etching of Al-rich AlGaN

DOE PAGES

Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

2016-12-01

Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl 3 to Cl 2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail themore » effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

PubMed

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

A patient-controlled functional electrical stimulation system for arm weight relief.

PubMed

Klauer, C; Ferrante, S; Ambrosini, E; Shiri, U; Dähne, F; Schmehl, I; Pedrocchi, A; Schauer, T

2016-11-01

A patient-driven control strategy for Functional Electrical Stimulation (FES), which amplifies volitionally-initiated shoulder abductions, is proposed to improve stroke patients' rehabilitation. Based on the measured abduction angle, a FES-induced muscle recruitment is generated that yields a pre-specified percentage of this angle - yielding arm weight relief. To guarantee the correct recruitment also under fatigue and uncertain muscle activation we employ feedback control of the recruitment level determined by filtering the FES-evoked electromyogram. Filter parameters are user-optimized to obtain a linear relation between filter output and angle with a good signal-to-noise ratio. The auto-tuned recruitment controller (RC) was tested on five healthy subjects and compared to direct stimulation (DS) while muscle fatigue progressively occurred. Results showed a more linear relation between recruitment level and angle than between non-controlled stimulation intensity and angle (R 2 =0.93 vs. R 2 =0.79, angular range of 54°). After 6 min of stimulation, abduction decreased by 42% ± 14 for DS and by 0% ± 12 for RC, showing an effective compensation of fatigue. RC yielded significant smaller errors than DS in generating desired angles (0.23% ± 5.9 vs. 14.6% ± 9.7). When FES-induced arm weight support was provided, a mean reduction of the volitional effort (determined by Electromyography) of 78% was achieved compared to angular tracking without FES. First experiments with one acute stroke patient are also reported. Copyright © 2016 IPEM. Published by Elsevier Ltd. All rights reserved.

An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

PubMed Central

Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

2012-01-01

Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Rinse adhesive, AdheSE One (ADSE-1), a 1-step Self-Etch adhesive, and AdheSE (ADSE), a 2-step Self-Etch adhesive. Teeth were thermocycled and immersed in 50% silver nitrate solution. When both interfaces were considered, SBMP has exhibited significantly less microleakage than other adhesive systems (resp., for SB1, ADSE-1 and ADSE, P = 0.0007, P < 0.0001 and P < 0.0001). When enamel and dentin interfaces were evaluated separately, (1) for the Self-Etch adhesives, microleakage was found greater at enamel than at dentin interfaces (for ADSE, P = 0.024 and for ADSE-1, P < 0.0001); (2) for the Etch and Rinse adhesive systems, there was no significant difference between enamel and dentin interfaces; (3) SBMP was found significantly better than other adhesives both at enamel and dentin interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1) and 2-step (ADSE) Self-Etch adhesives. PMID:22675358

Enamel Bond Strength of New Universal Adhesive Bonding Agents.

PubMed

McLean, D E; Meyers, E J; Guillory, V L; Vandewalle, K S

2015-01-01

Universal bonding agents have been introduced for use as self-etch or etch-and-rinse adhesives depending on the dental substrate and clinician's preference. The purpose of this study was to evaluate the shear bond strength (SBS) of composite to enamel using universal adhesives compared to a self-etch adhesive when applied in self-etch and etch-and-rinse modes over time. Extracted human third molars were used to create 120 enamel specimens. The specimens were ground flat and randomly divided into three groups: two universal adhesives and one self-etch adhesive. Each group was then subdivided, with half the specimens bonded in self-etch mode and half in etch-and-rinse mode. The adhesives were applied as per manufacturers' instructions, and composite was bonded using a standardized mold and cured incrementally. The groups were further divided into two subgroups with 10 specimens each. One subgroup was stored for 24 hours and the second for six months in 37°C distilled water and tested in shear. Failure mode was also determined for each specimen. A three-way analysis of variance (ANOVA) found a significant difference between groups based on bonding agent (p<0.001) and surface treatment (p<0.001) but not on time (p=0.943), with no significant interaction (p>0.05). Clearfil SE in etch-and-rinse and self-etch modes had more mixed fractures than either universal adhesive in either mode. Etching enamel significantly increased the SBS of composite to enamel. Clearfil SE had significantly greater bond strength to enamel than either universal adhesive, which were not significantly different from each other.

Etch bias inversion during EUV mask ARC etch

NASA Astrophysics Data System (ADS)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Modeling of block copolymer dry etching for directed self-assembly lithography

NASA Astrophysics Data System (ADS)

Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

Elastic, inelastic, and 1 n transfer cross sections for the B 10 + Sn 120 reaction

DOE PAGES

Gasques, L. R.; Freitas, A. S.; Chamon, L. C.; ...

2018-03-30

The 10B+ 120Sn reaction has been investigated at E Lab=37.5 MeV. The cross sections for different channels, such as the elastic scattering, the excitation of the 2 + and 3 -120Sn states, the excitation of the 1 + state of 10B, and the 1n pick-up transfer, have been measured. One-step distorted-wave Born approximation and coupled-reaction-channels calculations have been performed in the context of the double-folding São Paulo potential. Here, the effect of coupling the inelastic and transfer states on the angular distributions is discussed in the paper. In general, the theoretical calculations within the coupled-reaction-channels formalism yield a satisfactory agreementmore » with the corresponding experimental angular distributions.« less

Optimum instantaneous impulsive orbital injection to attain a specified asymptotic velocity vector.

NASA Technical Reports Server (NTRS)

Bean, W. C.

1971-01-01

A nalysis of the necessary conditions of Battin for instantaneous orbital injection, with consideration of the uniqueness of his solution, and of the further problem which arises in the degenerate case when radius vector and asymptotic vector are separated by 180 deg. It is shown that when the angular separation between radius vector and asymptotic velocity vector satisfies theta not equal to 180 deg, there are precisely two insertion-velocity vectors which permit attainment of the target asymptotic velocity vector, one yielding posigrade, the other retrograde motion. When theta equals to 180 deg, there is a family of insertion-velocity vectors which permit attainment of a specified asymptotic velocity vector with a unique insertion-velocity vector for every arbitrary orientation of a target unit angular momentum vector.

Elastic, inelastic, and 1 n transfer cross sections for the B 10 + Sn 120 reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gasques, L. R.; Freitas, A. S.; Chamon, L. C.

The 10B+ 120Sn reaction has been investigated at E Lab=37.5 MeV. The cross sections for different channels, such as the elastic scattering, the excitation of the 2 + and 3 -120Sn states, the excitation of the 1 + state of 10B, and the 1n pick-up transfer, have been measured. One-step distorted-wave Born approximation and coupled-reaction-channels calculations have been performed in the context of the double-folding São Paulo potential. Here, the effect of coupling the inelastic and transfer states on the angular distributions is discussed in the paper. In general, the theoretical calculations within the coupled-reaction-channels formalism yield a satisfactory agreementmore » with the corresponding experimental angular distributions.« less

Kinetic-energy matrix elements for atomic Hylleraas-CI wave functions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harris, Frank E., E-mail: harris@qtp.ufl.edu

Hylleraas-CI is a superposition-of-configurations method in which each configuration is constructed from a Slater-type orbital (STO) product to which is appended (linearly) at most one interelectron distance r{sub ij}. Computations of the kinetic energy for atoms by this method have been difficult due to the lack of formulas expressing these matrix elements for general angular momentum in terms of overlap and potential-energy integrals. It is shown here that a strategic application of angular-momentum theory, including the use of vector spherical harmonics, enables the reduction of all atomic kinetic-energy integrals to overlap and potential-energy matrix elements. The new formulas are validatedmore » by showing that they yield correct results for a large number of integrals published by other investigators.« less

Poster 8: ALMA observations of Titan : Vertical and spatial distributions of nitriles

NASA Astrophysics Data System (ADS)

Moreno, Raphael; Lellouch, Emmanuel; Vinatier, Sandrine; Gurwell, Mark; Moullet, Arielle; Lara, Luisa; Hidayat, Taufiq

2016-06-01

We report submm observations of Titan performed with the ALMA interferometer centered at the rotational frequencies of HCN(4-3) and HNC(4-3), i.e. 354 and 362 GHz. These measurements yielded disk-resolved emission spectra of Titan with an angular resolution of ˜0.47". Titan's angular surface diameter was 0.77". Data were acquired in summer 2012 near the greatest eastern and western elongations of Titan at a spectral resolution of 122 kHz (λ/dλ = 3106). We will present radiative transfer analysis of the acquired spectra. With the combination of all the detected rotational lines, we will constrain the atmospheric temperature, the spatial and vertical distribution HCN, HC3N, CH3CN, HNC, C2H5CN, as well as isotopic ratios.

Overlapping double etch technique for evaluation of metallic alloys to stress corrosion cracking

DOEpatents

Steeves, Arthur F.; Stewart, James C.

1981-01-01

A double overlapping etch zone technique for evaluation of the resistance of metallic alloys to stress corrosion cracking. The technique involves evaluating the metallic alloy along the line of demarcation between an overlapping double etch zone and single etch zone formed on the metallic alloy surface.

Sequential infiltration synthesis for enhancing multiple-patterning lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.

Studies and testing of antireflective (AR) coatings for soda-lime glass

NASA Technical Reports Server (NTRS)

Pastirik, E. M.; Sparks, T. G.; Coleman, M. G.

1978-01-01

Processes for producing antireflection films on glass are concentrated in three areas: acid etching of glass, plasma etching of glass, and acid development of sodium silicate films on glass. The best transmission was achieved through the acid etching technique, while the most durable films were produced from development of sodium silicate films. Control of the acid etching technique is presently inadequate for production implementation. While films having excellent antireflective properties were fabricated by plasma etching techniques, all were water soluble.

Lateral electrochemical etching of III-nitride materials for microfabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Jung

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Research on InGaAs FETs.

DTIC Science & Technology

1981-09-01

is to reduce resistance and to allow wirebonding. Finally, the excess p-region is etched away (Figs. 2f and 2g) using 25 citric acid (50% by weight...found to be parallel to the grains. Gates etched in the citric acid /hydrogen perioxide etch that are oriented parallel to the grains have the cross...occur at IV reverse bias (i.e., negative gate voltage and IDSS is typically z 45 mA. After 60 sec of etch- ing in the citric acid etch (i.e., 25 citric

Cr-Si Schottky nano-diodes utilizing anodic aluminum oxide templates.

PubMed

Kwon, Namyong; Kim, Kyohyeok; Heo, Jinhee; Chung, Ilsub

2014-04-01

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. The diameters of the diodes were 75.0, 57.6, and 35.8 nm. Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters due to an enhanced tunnel current contribution, which is attributed to a reduction in the barrier thickness. The diameters of Cr nanodots smaller than the Debye length (156 nm) play an important role in the reduction of barrier thickness. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

Magnetic effects in the paraxial regime of elastic electron scattering

NASA Astrophysics Data System (ADS)

Edström, Alexander; Lubk, Axel; Rusz, Ján

2016-11-01

Motivated by a recent claim [Phys. Rev. Lett. 116, 127203 (2016), 10.1103/PhysRevLett.116.127203] that electron vortex beams can be used to image magnetism at the nanoscale in elastic scattering experiments, using transmission electron microscopy, a comprehensive computational study is performed to study magnetic effects in the paraxial regime of elastic electron scattering in magnetic solids. Magnetic interactions from electron vortex beams, spin polarized electron beams, and beams with phase aberrations are considered, as they pass through ferromagnetic FePt or antiferromagnetic LaMnAsO. The magnetic signals are obtained by comparing the intensity over a disk in the diffraction plane for beams with opposite angular momentum or aberrations. The strongest magnetic signals are obtained from vortex beams with large orbital angular momentum, where relative magnetic signals above 10-3 are indicated for 10 ℏ orbital angular momentum, meaning that relative signals of one percent could be expected with the even larger orbital angular momenta, which have been produced in experimental setups. All results indicate that beams with low acceleration voltage and small convergence angles yield stronger magnetic signals, which is unfortunately problematic for the possibility of high spatial resolution imaging. Nevertheless, under atomic resolution conditions, relative magnetic signals in the order of 10-4 are demonstrated, corresponding to an increase with one order of magnitude compared to previous work.

Angular-Rate Estimation Using Star Tracker Measurements

NASA Technical Reports Server (NTRS)

Azor, R.; Bar-Itzhack, I.; Deutschmann, Julie K.; Harman, Richard R.

1999-01-01

This paper presents algorithms for estimating the angular-rate vector of satellites using quaternion measurements. Two approaches are compared, one that uses differentiated quatemion measurements to yield coarse rate measurements which are then fed into two different estimators. In the other approach the raw quatemion measurements themselves are fed directly into the two estimators. The two estimators rely on the ability to decompose the non-linear rate dependent part of the rotational dynamics equation of a rigid body into a product of an angular-rate dependent matrix and the angular-rate vector itself This decomposition, which is not unique, enables the treatment of the nonlinear spacecraft dynamics model as a linear one and, consequently, the application of a Pseudo-Linear Kalman Filter (PSELIKA). It also enables the application of a special Kalman filter which is based on the use of the solution of the State Dependent Algebraic Riccati Equation (SDARE) in order to compute the Kalman gain matrix and thus eliminates the need to propagate and update the filter covariance matrix. The replacement of the elaborate rotational dynamics by a simple first order Markov model is also examined. In this paper a special consideration is given to the problem of delayed quatemion measurements. Two solutions to this problem are suggested and tested. Real Rossi X-Ray Timing Explorer (RXTE) data is used to test these algorithms, and results of these tests are presented.

Angular-Rate Estimation using Star Tracker Measurements

NASA Technical Reports Server (NTRS)

Azor, R.; Bar-Itzhack, Itzhack Y.; Deutschmann, Julie K.; Harman, Richard R.

1999-01-01

This paper presents algorithms for estimating the angular-rate vector of satellites using quaternion measurements. Two approaches are compared, one that uses differentiated quaternion measurements to yield coarse rate measurements which are then fed into two different estimators. In the other approach the raw quaternion measurements themselves are fed directly into the two estimators. The two estimators rely on the ability to decompose the non-linear rate dependent part of the rotational dynamics equation of a rigid body into a product of an angular-rate dependent matrix and the angular-rate vector itself. This decomposition, which is not unique, enables the treatment of the nonlinear spacecraft dynamics model as a linear one and, consequently, the application of a Pseudo-Linear Kalman Filter (PSELIKA). It also enables the application of a special Kalman filter which is based on the use of the solution of the State Dependent Algebraic Riccati Equation (SDARE) in order to compute the Kalman gain matrix and thus eliminates the need to propagate and update the filter covariance matrix. The replacement of the elaborate rotational dynamics by a simple first order Markov model is also examined. In this paper a special consideration is given to the problem of delayed quaternion measurements. Two solutions to this problem are suggested and tested. Real Rossi X-Ray Timing Explorer (RXTE) data is used to test these algorithms, and results of these tests are presented.

A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

NASA Astrophysics Data System (ADS)

Vojak, B. A.; Alley, G. D.

1983-08-01

Two-dimensional numerical simulations are used to compare etched geometry and overgrown Si permeable base transistors (PTBs), considering both the etched collector and etched emitter biasing conditions made possible by the asymmetry of the etched structure. In PTB devices, the two-dimensional nature of the depletion region near the Schottky contact base grating results in a smaller electron barrier and, therefore, a larger collector current in the etched than in the overgrown structure. The parasitic feedback effects which result at high base-to-emitter bias levels lead to a deviation from the square-law behavior found in the collector characteristics of the overgrown PBT. These structures also have lower device capacitances and smaller transconductances at high base-to-emitter voltages. As a result, overgrown and etched structures have comparable predicted maximum values of the small signal unity short-circuit current gain frequency and maximum oscillation frequency.

Low damage dry etch for III-nitride light emitters

NASA Astrophysics Data System (ADS)

Nedy, Joseph G.; Young, Nathan G.; Kelchner, Kathryn M.; Hu, Yanling; Farrell, Robert M.; Nakamura, Shuji; DenBaars, Steven P.; Weisbuch, Claude; Speck, James S.

2015-08-01

We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

Micro-pyramidal structure fabrication on polydimethylsiloxane (PDMS) by Si (100) KOH wet etching

NASA Astrophysics Data System (ADS)

Hwang, Shinae; Lim, Kyungsuk; Shin, Hyeseon; Lee, Seongjae; Jang, Moongyu

2017-10-01

A high degree of accuracy in bulk micromachining is essential to fabricate micro-electro-mechanical systems (MEMS) devices. A series of etching experiments is carried out using 40 wt% KOH solutions at the constant temperature of 70 °C. Before wet etching, SF6 and O2 are used as the dry etching gas to etch the masking layers of a 100 nm thick Si3N4 and SiO2, respectively. The experimental results indicate that (100) silicon wafer form the pyramidal structures with (111) single crystal planes. All the etch profiles are analyzed using Scanning Electron Microscope (SEM) and the wet etch rates depend on the opening sizes. The manufactured pyramidal structures are used as the pattern of silicon mold. After a short hardening of coated polydimethylsiloxane (PDMS) layer, micro pyramidal structures are easily transferred to PDMS layer.

Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport

DOE PAGES

Noh, J. H.; Fowlkes, J. D.; Timilsina, R.; ...

2015-01-28

We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhancedmore » Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.« less

Formation and metrology of dual scale nano-morphology on SF(6) plasma etched silicon surfaces.

PubMed

Boulousis, G; Constantoudis, V; Kokkoris, G; Gogolides, E

2008-06-25

Surface roughness and nano-morphology in SF(6) plasma etched silicon substrates are investigated in a helicon type plasma reactor as a function of etching time and process parameters. The plasma etched surfaces are analyzed by atomic force microscopy. It is found that dual scale nano-roughness is formatted on the silicon surface comprising an underlying nano-roughness and superimposed nano-mounds. Detailed metrological quantification is proposed for the characterization of dual scale surface morphology. As etching proceeds, the mounds become higher, fewer and wider, and the underlying nano-roughness also increases. Increase in wafer temperature leads to smoother surfaces with lower, fewer and wider nano-mounds. A mechanism based on the deposition of etch inhibiting particles during the etching process is proposed for the explanation of the experimental behavior. In addition, appropriately designed experiments are conducted, and they confirm the presence of this mechanism.