Microstructure and Magnetic Properties of Optimally Annealed Ni43Mn41Co5Sn11Heusler Alloy

NASA Astrophysics Data System (ADS)

Elwindari, Nastiti; Kurniawan, Budhy; Kurniawan, Candra; Manaf, Azwar

2017-05-01

In this work, synthesis and characterization of a polycrystalline Ni43Mn41Co5Sn11 (NMCS) alloy are reported. Alloy preparation was conducted by melting the constituent components of the designated alloy under an inert Argon (Ar) atmosphere in a vacuum mini arc-melting furnace. Microstructure observation to the as-cast and annealed ingots showing dendritic structure in the as-cast sample. Series of annealing treatment to the sample at 1173 K have changed dendrites progressively in the homogeneous structure after 24 hours annealing time. The annealed sample consisted of a NiMnCoSn main phase with 99.3 % volume fraction. Hence, the 24 hours annealed ingot is a single phase alloy. The curie temperature of the annealed NMCS alloys was found in the range 348∼351 K. Loop hysteresis evaluation of the annealed ingots showed that ingot which annealed for 12 hours showed the largest magnetization value of 57.96 emu/g.

X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

NASA Astrophysics Data System (ADS)

Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

2018-05-01

In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration ( Q a) and the activation energy of microstrain relaxation ( Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

NASA Astrophysics Data System (ADS)

Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

2018-04-01

In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration (Q a) and the activation energy of microstrain relaxation (Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

Effect of low-temperature annealing on the creep of 1570 aluminum alloy

NASA Astrophysics Data System (ADS)

Perevezentsev, V. N.; Shcherban', M. Yu.; Gracheva, T. A.; Kuz'micheva, T. A.

2015-08-01

The effect of preliminary low-temperature annealing on the creep of a submicrocrystalline 1570 aluminum alloy fabricated by severe plastic deformation is studied. The creep rate is found to increase with the annealing time, but long-term annealing for 4 h decreases the creep rate to the value characteristic of the alloy not subjected to preliminary annealing. The increase in the creep rate of the alloy subjected to preliminary annealing is likely to be caused by an increase in the nonequilibrium excess volume in grain boundaries as a result of the dissolution of grain-boundary nanopores upon annealing and, hence, by an increase in the grain-boundary diffusion rate and the grain-boundary sliding rate.

Local Resistance Profiling of Ultra-Shallow Junction with Spike Lamp and Laser Annealing Using Scanning Spreading Resistance Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abo, Satoshi; Tanaka, Yuji; Nishikawa, Kazuhisa

2008-11-03

Local resistance profiles of ultra-shallow arsenic implanted into silicon with an energy of 3.5 keV and a dose of 1.2x10{sup 15} ions/cm{sup 2} activated by conventional spike lamp and laser annealing were measured by SSRM in a nitrogen atmosphere with a depth resolution of less than 10 nm for investigating the combination of the conventional spike lamp and laser annealing. Spike lamp annealing at 1050 deg. C followed by laser annealing at a power density of 0.42 kW/mm{sup 2} was found to give the lowest sheet resistance. The resistance profiles obtained by SSRM also indicated the lowest resistance for themore » sample after spike lamp annealing at 1050 deg. C followed by laser annealing with a power density of 0.42 kW/mm{sup 2}. Laser annealing alone with a power density of 0.42 kW/mm{sup 2} resulted in the higher sheet resistance, though the shallower resistance profile could be obtained. Spike lamp annealing followed by laser annealing procedures are effective in activating shallow arsenic profiles.« less

Studying hardness, workability and minimum bending radius in selectively laser-sintered Ti–6Al–4V alloy samples

NASA Astrophysics Data System (ADS)

Galkina, N. V.; Nosova, Y. A.; Balyakin, A. V.

2018-03-01

This research is relevant as it tries to improve the mechanical and service performance of the Ti–6Al–4V titanium alloy obtained by selective laser sintering. For that purpose, sintered samples were annealed at 750 and 850°C for an hour. Sintered and annealed samples were tested for hardness, workability and microstructure. It was found that incomplete annealing of selectively laser-sintered Ti–6Al–4V samples results in an insignificant reduction in hardness and ductility. Sintered and incompletely annealed samples had a hardness of 32..33 HRC, which is lower than the value of annealed parts specified in standards. Complete annealing at temperature 850°C reduces the hardness to 25 HRC and ductility by 15...20%. Incomplete annealing lowers the ductility factor from 0.08 to 0.06. Complete annealing lowers that value to 0.025. Complete annealing probably results in the embrittlement of sintered samples, perhaps due to their oxidation and hydrogenation in the air. Optical metallography showed lateral fractures in both sintered and annealed samples, which might be the reason why they had lower hardness and ductility.

Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

NASA Astrophysics Data System (ADS)

Jeon, Jae Kwon; Um, Jae Gwang; Lee, Suhui; Jang, Jin

2017-12-01

We report two-step annealing, high temperature and sequent low temperature, for amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) to improve its stability and device performance. The annealing is carried out at 300 oC in N2 ambient for 1 h (1st step annealing) and then at 250 oC in vacuum for 10 h (2nd step annealing). It is found that the threshold voltage (VTH) changes from 0.4 V to -2.0 V by the 1st step annealing and to +0.6 V by 2nd step annealing. The mobility changes from 18 cm2V-1s-1 to 25 cm2V-1s-1 by 1st step and decreases to 20 cm2V-1s-1 by 2nd step annealing. The VTH shift by positive bias temperature stress (PBTS) is 3.7 V for the as-prepared TFT, and 1.7 V for the 1st step annealed TFT, and 1.3 V for the 2nd step annealed TFT. The XPS (X-ray photoelectron spectroscopy) depth analysis indicates that the reduction in O-H bonds at the top interface (SiO2/a-IGZO) by 2nd step annealing appears, which is related to the positive VTH shift and smaller VTH shift by PBTS.

Influence of oxygen annealing on the dielectric properties of SrBi2(V0.1Nb0.9)2O9 ceramics

NASA Astrophysics Data System (ADS)

Wu, Y.; Forbess, M.; Seraji, S.; Limmer, S.; Chou, T.; Cao, G. Z.

2001-09-01

The influences of O2 and N2 annealing on the dielectric properties of SrBi2(V0.1Nb0.9)2O9 (SBVN) ferroelectrics were studied. Ceramic samples were prepared by reaction sintering a powder mixture of constituent oxides at 950 °C for 2 h in air. Some samples were also subsequently annealed at 800 °C for 3 h in O2 or N2. With O2 annealing, the Curie point of the SBVN ferroelectrics changed from ~433 to ~438 °C and the peak dielectric constant increased from ~760 to ~1010 (at 100 kHz). However, no change in the Curie point was found with N2 annealing. Furthermore, O2 annealing was found to reduce significantly both the dielectric constant and loss tangent of the SBVN ferroelectrics at frequencies below 1000 Hz. XRD results revealed a small reduction in the lattice constants with O2 annealing, but no appreciable change with N2 annealing. In addition, no detectable change in the microstructure of the SBVN samples was found with annealing. These results imply that some V4+ ions, which are compensated by the formation of oxygen vacancies, existed in the SBVN ferroelectrics prior to O2 annealing. V4+ ions were oxidized to V5+ with O2 annealing, which resulted in improved dielectric properties.

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

NASA Astrophysics Data System (ADS)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Remarkably improved field emission of TiO{sub 2} nanotube arrays by annealing atmosphere engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, Ai-Zhen; Wang, Cheng-Wei, E-mail: cwwang@nwnu.edu.cn; Chen, Jian-Biao

2015-10-15

Highlights: • TNAs were prepared by anodization and annealed in different atmospheres. • The crystal structure and electronic properties of the prepared TNAs were investigated. • The field emission of TNAs was highly dependent on annealing atmosphere. • A low turn-on of 2.44 V/μm was obtained for TNAs annealed in H{sub 2} atmosphere. - Abstract: Highly ordered TiO{sub 2} nanotube arrays (TNAs) were prepared by anodization, and followed by annealing in the atmospheres of Air, Vacuum, Ar, and H{sub 2}. The effect of annealing atmosphere on the crystal structure, composition, and electronic properties of TNAs were systematically investigated. Raman andmore » EDS results indicated that the TNAs annealed in anaerobic atmospheres contained more oxygen vacancies, which result in the substantially improved electron transport properties and reduced work function. Moreover, it was found that the FE properties of TNAs were highly dependent on the annealing atmosphere. By engineering the annealing atmosphere, the turn-on field as low as 2.44 V/μm can be obtained from TNAs annealed in H{sub 2}, which was much lower than the value of 18.23 V/μm from the TNAs annealed in the commonly used atmosphere of Air. Our work suggests an instructive and attractive way to fabricate high performance TNAs field emitters.« less

Enhancing performance and uniformity of CH3NH3PbI3-xClx perovskite solar cells by air-heated-oven assisted annealing under various humidities

NASA Astrophysics Data System (ADS)

Zhou, Qing; Jin, Zhiwen; Li, Hui; Wang, Jizheng

2016-02-01

To fabricate high-performance metal-halide perovskite solar cells, a thermal annealing process is indispensable in preparing high quality perovskite film. And usually such annealing is performed on hot plate. However hot-plate annealing could cause problems such as inhomogeneous heating (induced by non-tight contact between the sample and the plate), it is also not fit for large scale manufactory. In this paper, we conduct the annealing process in air-heated oven under various humidity environments, and compared the resulted films (CH3NH3PbI3-xClx) and devices (Al/PC61BM/CH3NH3PbI3-xClx/PEDOT:PSS/ITO/glass) with that obtained via hot-plate annealing. It is found that the air-heated-oven annealing is superior to the hot-plate annealing: the annealing time is shorter, the films are more uniform, and the devices exhibit higher power conversion efficiency and better uniformity. The highest efficiencies achieved for the oven and hot-plate annealing processes are 14.9% and 13.5%, and the corresponding standard deviations are 0.5% and 0.8%, respectively. Our work here indicates that air-heated-oven annealing could be a more reliable and more efficient way for both lab research and large-scale production.

Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi

We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10{sup 8} and a field-effect mobility of 0.3 cm{sup 2} V{sup −1} s{supmore » −1}. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.« less

Effects of processing and dopant on radiation damage removal in silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H. W., Jr.; Swartz, C. K.; Mehta, S.

1982-01-01

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Performance of Quantum Annealers on Hard Scheduling Problems

NASA Astrophysics Data System (ADS)

Pokharel, Bibek; Venturelli, Davide; Rieffel, Eleanor

Quantum annealers have been employed to attack a variety of optimization problems. We compared the performance of the current D-Wave 2X quantum annealer to that of the previous generation D-Wave Two quantum annealer on scheduling-type planning problems. Further, we compared the effect of different anneal times, embeddings of the logical problem, and different settings of the ferromagnetic coupling JF across the logical vertex-model on the performance of the D-Wave 2X quantum annealer. Our results show that at the best settings, the scaling of expected anneal time to solution for D-WAVE 2X is better than that of the DWave Two, but still inferior to that of state of the art classical solvers on these problems. We discuss the implication of our results for the design and programming of future quantum annealers. Supported by NASA Ames Research Center.

Mechanism for accurate, protein-assisted DNA annealing by Deinococcus radiodurans DdrB

PubMed Central

Sugiman-Marangos, Seiji N.; Weiss, Yoni M.; Junop, Murray S.

2016-01-01

Accurate pairing of DNA strands is essential for repair of DNA double-strand breaks (DSBs). How cells achieve accurate annealing when large regions of single-strand DNA are unpaired has remained unclear despite many efforts focused on understanding proteins, which mediate this process. Here we report the crystal structure of a single-strand annealing protein [DdrB (DNA damage response B)] in complex with a partially annealed DNA intermediate to 2.2 Å. This structure and supporting biochemical data reveal a mechanism for accurate annealing involving DdrB-mediated proofreading of strand complementarity. DdrB promotes high-fidelity annealing by constraining specific bases from unauthorized association and only releases annealed duplex when bound strands are fully complementary. To our knowledge, this mechanism provides the first understanding for how cells achieve accurate, protein-assisted strand annealing under biological conditions that would otherwise favor misannealing. PMID:27044084

Vacancy-Induced Ferromagnetism in SnO2 Nanocrystals: A Positron Annihilation Study

NASA Astrophysics Data System (ADS)

Chen, Zhi-Yuan; Chen, Zhi-Quan; Pan, Rui-Kun; Wang, Shao-Jie

2013-02-01

SnO2 nanopowders were pressed into pellets and annealed in air from 100 to 1400°C. Both XRD and Raman spectroscopy confirm that all annealed samples were single phase with a tetragonal rutile structure. Annealing induces an increase in the SnO2 grain size from 30 to 83 nm. Positron annihilation measurements reveal vacancy defects in the grain boundary region, and the interfacial defects remain stable after annealing below 400°C, then they are gradually recovered with increasing annealing temperature up to 1200°C. Room temperature ferromagnetism was observed for SnO2 nanocrystals annealed below 1200°C, and the magnetization decreases continuously with increasing annealing temperature. However, the ferromagnetism disappears at 1200°C annealing. This shows good coincidence with the recovery of interfacial defects in the nanocrystals, suggesting that the ferromagnetism is probably induced by vacancy defects in the interface region.

Tailoring of magnetoimpedance effect and magnetic softness of Fe-rich glass-coated microwires by stress- annealing.

PubMed

Zhukova, V; Blanco, J M; Ipatov, M; Churyukanova, M; Taskaev, S; Zhukov, A

2018-02-16

There is a pressing need for improving of the high-frequency magneto-impedance effect of cost-effective soft magnetic materials for use in high-performance sensing devices. The impact of the stress-annealing on magnetic properties and high frequency impedance of Fe-rich glass-coated microwires was studied. Hysteresis loops of Fe-rich microwires have been considerably affected by stress- annealing. In stress-annealed Fe- rich microwire we obtained drastic decreasing of coercivity and change of character of hysteresis loop from rectangular to linear. By controlling stress-annealing conditions (temperature and time) we achieved drastic increasing (by order of magnitude) of giant magnetoimpedance ratio. Coercivity, remanent magnetization, diagonal and of-diagonal magnetoimpedance effect of Fe-rich microwires can be tuned by stress-annealing conditions: annealing temperature and time. Observed experimental results are discussed considering relaxation of internal stresses, compressive "back-stresses" arising after stress annealing and topological short range ordering.

Effects of annealing process on magnetic properties and structures of Nd-Pr-Ce-Fe-B melt-spun powders

NASA Astrophysics Data System (ADS)

Pei, Kun; Lin, Min; Yan, Aru; Zhang, Xing

2016-05-01

The effects of annealing process on magnetic properties and structures of Nd-Pr-Ce-Fe-B melt-spun powders have been investigated. The magnetic properties improve a lot when the annealing temperature is 590-650 °C and the annealing time exceeds 1 min. The magnetic properties is stable when the annealing time is 590-650 °C. The powders contains obvious grains when the annealing time is only 1 min, while the grains grow up obviously, leading to the decrease of Br and (BH)max, when the annealing time is more than 9 min. The Hcj changes little for different annealing time. The cooling rate also affects the magnetic properties of powders with different Ce-content. Faster cooling rate is favorable to improve magnetic properties with low Ce-content powders, while high Ce-content powders need slower cooling rate.

Annealing induced reorientation of crystallites in Sn doped ZnO films

NASA Astrophysics Data System (ADS)

Ravichandran, K.; Vasanthi, M.; Thirumurugan, K.; Sakthivel, B.; Karthika, K.

2014-11-01

Tin doped ZnO thin films were prepared by employing a simplified spray pyrolysis technique using a perfume atomizer and subsequently annealed under different temperatures from 350 °C to 500 °C in steps of 50 °C. The structural, optical, electrical, photoluminescence and surface morphological properties of the as-deposited films were studied and compared with that of the annealed films. The X-ray diffraction studies showed that as-deposited film exhibits preferential orientation along the (0 0 2) plane and it changes in favour of (1 0 0) plane after annealing. The increase in crystallite size due to annealing is explained on the basis of Ostwald ripening effect. It is found that the optical transmittance and band gap increases with increase in annealing temperature. A slight decrease in resistivity caused by annealing is discussed in correlation with annealing induced defect modifications and surface morphology.

Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chander, Subhash, E-mail: sckhurdra@gmail.com; Purohit, A.; Lal, C.

2016-05-06

In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays anmore » important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.« less

Simulated annealing with probabilistic analysis for solving traveling salesman problems

NASA Astrophysics Data System (ADS)

Hong, Pei-Yee; Lim, Yai-Fung; Ramli, Razamin; Khalid, Ruzelan

2013-09-01

Simulated Annealing (SA) is a widely used meta-heuristic that was inspired from the annealing process of recrystallization of metals. Therefore, the efficiency of SA is highly affected by the annealing schedule. As a result, in this paper, we presented an empirical work to provide a comparable annealing schedule to solve symmetric traveling salesman problems (TSP). Randomized complete block design is also used in this study. The results show that different parameters do affect the efficiency of SA and thus, we propose the best found annealing schedule based on the Post Hoc test. SA was tested on seven selected benchmarked problems of symmetric TSP with the proposed annealing schedule. The performance of SA was evaluated empirically alongside with benchmark solutions and simple analysis to validate the quality of solutions. Computational results show that the proposed annealing schedule provides a good quality of solution.

Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yücel, E., E-mail: dr.ersinyucel@gmail.com; Kahraman, S.; Güder, H.S.

2015-08-15

Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects ofmore » different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.« less

Effect of thermal annealing Super Yellow emissive layer on efficiency of OLEDs

PubMed Central

Burns, Samantha; MacLeod, Jennifer; Trang Do, Thu; Sonar, Prashant; Yambem, Soniya D.

2017-01-01

Thermal annealing of the emissive layer of an organic light emitting diode (OLED) is a common practice for solution processable emissive layers and reported annealing temperatures varies across a wide range of temperatures. We have investigated the influence of thermal annealing of the emissive layer at different temperatures on the performance of OLEDs. Solution processed polymer Super Yellow emissive layers were annealed at different temperatures and their performances were compared against OLEDs with a non-annealed emissive layer. We found a significant difference in the efficiency of OLEDs with different annealing temperatures. The external quantum efficiency (EQE) reached a maximum of 4.09% with the emissive layer annealed at 50 °C. The EQE dropped by ~35% (to 2.72%) for OLEDs with the emissive layers annealed at 200 °C. The observed performances of OLEDs were found to be closely related to thermal properties of polymer Super Yellow. The results reported here provide an important guideline for processing emissive layers and are significant for OLED and other organic electronics research communities. PMID:28106082

Facile Synthesis of Calcium Borate Nanoparticles and the Annealing Effect on Their Structure and Size

PubMed Central

Erfani, Maryam; Saion, Elias; Soltani, Nayereh; Hashim, Mansor; Wan Abdullah, Wan Saffiey B.; Navasery, Manizheh

2012-01-01

Calcium borate nanoparticles have been synthesized by a thermal treatment method via facile co-precipitation. Differences of annealing temperature and annealing time and their effects on crystal structure, particle size, size distribution and thermal stability of nanoparticles were investigated. The formation of calcium borate compound was characterized by X-ray diffraction (XRD) and Fourier Transform Infrared spectroscopy (FTIR), Transmission electron microscopy (TEM), and Thermogravimetry (TGA). The XRD patterns revealed that the co-precipitated samples annealed at 700 °C for 3 h annealing time formed an amorphous structure and the transformation into a crystalline structure only occurred after 5 h annealing time. It was found that the samples annealed at 900 °C are mostly metaborate (CaB2O4) nanoparticles and tetraborate (CaB4O7) nanoparticles only observed at 970 °C, which was confirmed by FTIR. The TEM images indicated that with increasing the annealing time and temperature, the average particle size increases. TGA analysis confirmed the thermal stability of the annealed samples at higher temperatures. PMID:23203073

In-situ XRD vs ex-situ vacuum annealing of tantalum oxynitride thin films: Assessments on the structural evolution

NASA Astrophysics Data System (ADS)

Cunha, L.; Apreutesei, M.; Moura, C.; Alves, E.; Barradas, N. P.; Cristea, D.

2018-04-01

The purpose of this work is to discuss the main structural characteristics of a group of tantalum oxynitride (TaNxOy) thin films, with different compositions, prepared by magnetron sputtering, and to interpret and compare the structural changes, by X-ray diffraction (XRD), when the samples are vacuum annealed under two different conditions: i) annealing, followed by ex-situ XRD: one sample of each deposition run was annealed at a different temperature, until a maximum of 800 °C, and the XRD patterns were obtained, at room temperature, after each annealing process; ii) annealing with in-situ XRD: the diffraction patterns are obtained, at certain temperatures, during the annealing process, using always the same sample. In-situ XRD annealing could be an interesting process to perform annealing, and analysing the evolution of the structure with the temperature, when compared to the classical process. A higher structural stability was observed in some of the samples, particularly on those with highest oxygen content, but also on the sample with non-metal (O + N) to metal (Ta) ratio around 0.5.

Quantum Spin Glasses, Annealing and Computation

NASA Astrophysics Data System (ADS)

Chakrabarti, Bikas K.; Inoue, Jun-ichi; Tamura, Ryo; Tanaka, Shu

2017-05-01

List of tables; List of figures, Preface; 1. Introduction; Part I. Quantum Spin Glass, Annealing and Computation: 2. Classical spin models from ferromagnetic spin systems to spin glasses; 3. Simulated annealing; 4. Quantum spin glass; 5. Quantum dynamics; 6. Quantum annealing; Part II. Additional Notes: 7. Notes on adiabatic quantum computers; 8. Quantum information and quenching dynamics; 9. A brief historical note on the studies of quantum glass, annealing and computation.

Effect of Annealing on the Density of Defects in Epitaxial CdTe (211)/GaAs

NASA Astrophysics Data System (ADS)

Bakali, Emine; Selamet, Yusuf; Tarhan, Enver

2018-05-01

CdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the density of dislocation of these CdTe thin films under varying annealing parameters such as annealing temperature, annealing duration, and number of cycles. Annealings were carried out using a homemade annealing reactor possessing a special heater element made of a Si wafer for rapid heating. The density of dislocations, which were made observable with a scanning electron microscope after etching with an Everson solution, were calculated by counting the number of dislocations per unit surface area, hence the term etch pit density (EPD). We were able to decrease EPD values by one order of magnitude after annealing. For example, the best EPD value after a 20-min annealing at 400°C was ˜ 2 × 107 cm-2 for a 1.63-μm CdTe thin film which was about 9.5 × 107 cm-2 before annealing. We also employed Raman scattering measurements to see the changes in the structural quality of the samples. From the Raman measurements, we were able to see improvements in the quality of our samples from the annealing by studying the ratio of 2LO/LO phonon mode Raman intensities. We also observed a clear decrease in the intensity of Te precipitations-related modes, indicating a decrease in the size and number of these precipitations.

Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon.

PubMed

Behzad, Kasra; Mat Yunus, Wan Mahmood; Talib, Zainal Abidin; Zakaria, Azmi; Bahrami, Afarin

2012-01-16

Porous silicon (PSi) layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm² fixed current density for different etching times. The samples were coated with a 50-60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM). Photoacoustic spectroscopy (PAS) measurements were carried out to measure the thermal diffusivity (TD) of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

A new bottom-up synthesis of MnBi particles with high magnetic performance

NASA Astrophysics Data System (ADS)

Liu, Shoufa; Wang, Jinpeng; Dong, Feng

2018-01-01

Mn and Bi nanoparticles were synthesized by a wet chemistry reduction process. The as-synthesized Mn and Bi nanoparticles were mixed in hexane with the molar ratio of 1 to 1, and annealed at 250 °C in an inert gas environment. In four parallel experiments, the annealing time was controlled to be 2, 4, 6, and 8 h. The impacts of annealing time on product morphology, crystallization, and magnetic properties were investigated. The results showed that within 6 h annealing, an increased annealing time resulted in more sintering among the particles in the products, enhanced crystallization, and improved magnetic properties. When the annealing time exceeded 6 h, further annealing did not bring much difference in morphology, crystallization, and magnetic properties, indicating a thermally stable state of the product.

Annealing effect on current-driven domain wall motion in Pt/[Co/Ni] wire

NASA Astrophysics Data System (ADS)

Furuta, Masaki; Liu, Yang; Sepehri-Amin, Hossein; Hono, Kazuhiro; Zhu, Jian-Gang Jimmy

2017-09-01

The annealing effect on the efficiency of current-driven domain wall motion governed by the spin Hall effect in perpendicularly magnetized Pt/[Co/Ni] wires is investigated experimentally. Important physical parameters, such as the Dzyaloshinskii-Moriya Interaction (DMI), spin Hall angle, and perpendicular anisotropy field strength, for the domain wall motion are all characterized at each annealing temperature. It is found that annealing of wires at temperatures over 120 °C causes significant reduction of the domain wall velocity. Energy dispersive X-ray spectroscopy analysis shows pronounced Co diffusion across the Pt/Co interface resulted from annealing at relatively high temperatures. The combined modeling study shows that the reduction of DMI caused by annealing is mostly responsible for the domain wall velocity reduction due to annealing.

Population Annealing Monte Carlo for Frustrated Systems

NASA Astrophysics Data System (ADS)

Amey, Christopher; Machta, Jonathan

Population annealing is a sequential Monte Carlo algorithm that efficiently simulates equilibrium systems with rough free energy landscapes such as spin glasses and glassy fluids. A large population of configurations is initially thermalized at high temperature and then cooled to low temperature according to an annealing schedule. The population is kept in thermal equilibrium at every annealing step via resampling configurations according to their Boltzmann weights. Population annealing is comparable to parallel tempering in terms of efficiency, but has several distinct and useful features. In this talk I will give an introduction to population annealing and present recent progress in understanding its equilibration properties and optimizing it for spin glasses. Results from large-scale population annealing simulations for the Ising spin glass in 3D and 4D will be presented. NSF Grant DMR-1507506.

Effect of Annealing Temperature on Bi3.25La0.75Ti3O12 Powders for Humidity Sensing Properties

NASA Astrophysics Data System (ADS)

Zhang, Yong; He, Jinping; Yuan, Mengjiao; Jiang, Bin; Li, Peiwen; Tong, Yexing; Zheng, Xuejun

2017-01-01

Bi3.25La0.75Ti3O12 (BLT) powders have been synthesized via the metal-organic decomposition method with annealing of the BLT precursor solution at 350°C, 450°C, 550°C, 650°C or 750°C. The crystalline structure and morphology of the BLT powders were characterized by x-ray diffraction analysis, field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, and specific surface and pore size analyses. The humidity sensing properties of the BLT powders annealed at the five temperatures were investigated to determine the effect of annealing temperature. The annealing temperature strongly influenced the grain size, pore size distribution, and specific surface area of the BLT powders, being largely correlated to their humidity sensing properties. The specific surface area of the BLT powder annealed at 550°C was 68.2 m2/g, much larger than for the other annealing temperatures, and the majority of the pores in the BLT powder annealed at 550°C were mesoporous, significantly increasing the adsorption efficiency of water vapor onto the surface of the material. The impedance of the BLT powder annealed at 550°C varied by more than five orders of magnitude over the whole humidity range at working frequency of 100 Hz, being approximately five times greater than for BLT powders annealed at other temperatures. The response time was about 8 s, with maximum hysteresis of around 3% relative humidity. The BLT powder annealed at 550°C exhibited the best humidity sensing properties compared with the other annealing temperatures. We expect that these results will offer useful guidelines for preparation of humidity sensing materials.

Effect of Annealing on the Thermoluminescence Properties of ZnO Nanophosphor

NASA Astrophysics Data System (ADS)

Kalita, J. M.; Wary, G.

2017-07-01

We report the effect of annealing on the thermoluminescence (TL) properties of zinc oxide (ZnO) nanophosphor. The sample was synthesised by a wet chemical process. The characterisation report shows that the size of the grains is within 123.0 nm-160.5 nm. TL measured at 2 K/s from a fresh un-annealed sample irradiated to 60 mGy shows a composite glow curve containing three peaks at 353.2 K, 429.1 K, and 455.3 K. On the other hand, samples annealed at 473 K and 573 K followed by irradiation to 60 mGy do not give TL. However, annealing at 673 K and 773 K followed by irradiation to the same dose produces a glow curve comprising two overlapping peaks at 352.3 K and 370.6 K. In the TL emission spectrum of un-annealed sample, two emission peaks were found in green ( 523 nm) and orange ( 620 nm) regions whereas in annealed samples, only a peak was found in the orange region ( 618 nm). Kinetic analysis shows that the activation energy corresponding to TL peaks at 353.2 K, 429.1 K, and 455.3 K of the un-annealed sample are 0.64 eV, 0.80 eV, and 1.20 eV whereas that of the peaks at 352.3 K and 370.6 K of 673 K and 773 K annealed samples are 0.64 eV and 0.70 eV, respectively. All peaks of un-annealed and annealed samples, except the one at 429.1 K of the un-annealed sample, follow first-order kinetics whereas the peak at 429.1 K follows second-order kinetics. Considering the kinetic and spectral features, an energy band model for ZnO nanophosphor has been proposed.

Two- and multi-step annealing of cereal starches in relation to gelatinization.

PubMed

Shi, Yong-Cheng

2008-02-13

Two- and multi-step annealing experiments were designed to determine how much gelatinization temperature of waxy rice, waxy barley, and wheat starches could be increased without causing a decrease in gelatinization enthalpy or a decline in X-ray crystallinity. A mixture of starch and excess water was heated in a differential scanning calorimeter (DSC) pan to a specific temperature and maintained there for 0.5-48 h. The experimental approach was first to anneal a starch at a low temperature so that the gelatinization temperature of the starch was increased without causing a decrease in gelatinization enthalpy. The annealing temperature was then raised, but still was kept below the onset gelatinization temperature of the previously annealed starch. When a second- or third-step annealing temperature was high enough, it caused a decrease in crystallinity, even though the holding temperature remained below the onset gelatinization temperature of the previously annealed starch. These results support that gelatinization is a nonequilibrium process and that dissociation of double helices is driven by the swelling of amorphous regions. Small-scale starch slurry annealing was also performed and confirmed the annealing results conducted in DSC pans. A three-phase model of a starch granule, a mobile amorphous phase, a rigid amorphous phase, and a crystalline phase, was used to interpret the annealing results. Annealing seems to be an interplay between a more efficient packing of crystallites in starch granules and swelling of plasticized amorphous regions. There is always a temperature ceiling that can be used to anneal a starch without causing a decrease in crystallinity. That temperature ceiling is starch-specific, dependent on the structure of a starch, and is lower than the original onset gelatinization of a starch.

Effect of annealing on the laser induced damage of polished and CO2 laser-processed fused silica surfaces

NASA Astrophysics Data System (ADS)

Doualle, T.; Gallais, L.; Cormont, P.; Donval, T.; Lamaignère, L.; Rullier, J. L.

2016-06-01

We investigate the effect of different heat treatments on the laser-induced damage probabilities of fused silica samples. Isothermal annealing in a furnace is applied, with different temperatures in the range 700-1100 °C and 12 h annealing time, to super-polished fused silica samples. The surface flatness and laser damage probabilities at 3 ns, 351 nm are measured before and after the different annealing procedures. We have found a significant improvement of the initial laser damage probabilities of the silica surface after annealing at 1050 °C for 12 h. A similar study has been conducted on CO2 laser-processed sites on the surface of the samples. Before and after annealing, we have studied the morphology of the sites, the evolution of residual stress, and the laser-induced damage threshold measured at 351 nm, 3 ns. In this case, we observe that the laser damage resistance of the laser created craters can reach the damage level of the bare fused silica surface after the annealing process, with a complete stress relieve. The obtained results are then compared to the case of local annealing process by CO2 laser irradiation during 1 s, and we found similar improvements in both cases. The different results obtained in the study are compared to numerical simulations made with a thermo-mechanical model based on finite-element method that allows the simulation of the isothermal or the local annealing process, the evolution of stress and fictive temperature. The simulation results were found to be very consistent with experimental observations for the stresses evolution after annealing and estimation of the heat affected area during laser-processing based on the density dependence with fictive temperature. Following this work, the temperature for local annealing should reach 1330-1470 °C for an optimized reduction of damage probability and be below the threshold for material removal, whereas furnace annealing should be kept below the annealing point to avoid sample deformation.

Controlling superconductivity in La 2-xSr xCuO 4+δ by ozone and vacuum annealing

DOE PAGES

Leng, Xiang; Bozovic, Ivan

2014-11-21

In this study we performed a series of ozone and vacuum annealing experiments on epitaxial La 2-xSr xCuO 4+δ thin films. The transition temperature after each annealing step has been measured by the mutual inductance technique. The relationship between the effective doping and the vacuum annealing time has been studied. Short-time ozone annealing at 470 °C oxidizes an underdoped film all the way to the overdoped regime. The subsequent vacuum annealing at 350 °C to 380 °C slowly brings the sample across the optimal doping point back to the undoped, non-superconducting state. Several ozone and vacuum annealing cycles have beenmore » done on the same sample and the effects were found to be repeatable and reversible Vacuum annealing of ozone-loaded LSCO films is a very controllable process, allowing one to tune the doping level of LSCO in small steps across the superconducting dome, which can be used for fundamental physics studies.« less

Annealing temperature effect on self-assembled Au droplets on Si (111).

PubMed

Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

2013-12-13

We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

Annealing effects on electron-beam evaporated Al 2O 3 films

NASA Astrophysics Data System (ADS)

Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

2005-04-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

Controlling superconductivity in La 2-xSr xCuO 4+δ by ozone and vacuum annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leng, Xiang; Bozovic, Ivan

In this study we performed a series of ozone and vacuum annealing experiments on epitaxial La 2-xSr xCuO 4+δ thin films. The transition temperature after each annealing step has been measured by the mutual inductance technique. The relationship between the effective doping and the vacuum annealing time has been studied. Short-time ozone annealing at 470 °C oxidizes an underdoped film all the way to the overdoped regime. The subsequent vacuum annealing at 350 °C to 380 °C slowly brings the sample across the optimal doping point back to the undoped, non-superconducting state. Several ozone and vacuum annealing cycles have beenmore » done on the same sample and the effects were found to be repeatable and reversible Vacuum annealing of ozone-loaded LSCO films is a very controllable process, allowing one to tune the doping level of LSCO in small steps across the superconducting dome, which can be used for fundamental physics studies.« less

Mechanical and optoelectric properties of post-annealed fluorine-doped tin oxide films by ultraviolet laser irradiation

NASA Astrophysics Data System (ADS)

Tseng, Shih-Feng; Hsiao, Wen-Tse; Chiang, Donyau; Huang, Kuo-Cheng; Chou, Chang-Pin

2011-06-01

The fluorine-doped tin oxide (FTO) thin film deposited on a soda-lime glass substrate was annealed by a defocus ultraviolet (UV) laser irradiation at ambient temperature. The mechanical and optoelectric properties of FTO films annealed by using the various laser processing parameters were reported. After the FTO films were subjected to laser post-annealing, the microhardness were slightly less but the reduced modulus values were larger than that of unannealed FTO films, respectively. The average optical transmittance in the visible waveband slightly increased with increasing the laser annealing energy and scan speed. Moreover, all the sheet resistance of laser annealed films was less than that of the unannealed ones. We found that the sheet resistance decrease was obviously influenced by annealing. The suitable annealing conditions could maintain the film thickness and relief the internal stress generated in the film preparation process to improve the electrical conductivity via decreasing laser energy or increasing scan speed.

Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

NASA Astrophysics Data System (ADS)

van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

2016-09-01

We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

PubMed

Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

2018-02-26

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Population annealing with weighted averages: A Monte Carlo method for rough free-energy landscapes

NASA Astrophysics Data System (ADS)

Machta, J.

2010-08-01

The population annealing algorithm introduced by Hukushima and Iba is described. Population annealing combines simulated annealing and Boltzmann weighted differential reproduction within a population of replicas to sample equilibrium states. Population annealing gives direct access to the free energy. It is shown that unbiased measurements of observables can be obtained by weighted averages over many runs with weight factors related to the free-energy estimate from the run. Population annealing is well suited to parallelization and may be a useful alternative to parallel tempering for systems with rough free-energy landscapes such as spin glasses. The method is demonstrated for spin glasses.

Annealing temperature dependence of magnetoimpedance effect in electrodeposited [Ni80fe20/Cu]3 multilayers

NASA Astrophysics Data System (ADS)

Maulana, Frendi; Eko Prastyo, W.; Nuryani; Purnama, B.

2017-11-01

We have conducted an experiment of magnetoimpedance with a variation of annealing temperature of [Ni80Fe20/Cu)]3 multilayers. The multilayer is electrodeposited on Cu-PCB substrate. Magnetoimpedance effect is impedance measure on account of external magnetic field. The found MI (magnetoimpedance) ratio is 7,63 % (without annealing) and 4,75 % (using annealing) of 100 ºC. We find that MI ratio depends on to annealing temperature and current frequence. MI ratio decreases due to rising temperature and identified increase due to the frequency. The highest MI ratio is on a sample without annealing temperature and measurement at 100 kHz frequence.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintainingmore » high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.« less

Origin of two maxima in specific heat in enthalpy relaxation under thermal history composed of cooling, annealing, and heating.

PubMed

Sakatsuji, Waki; Konishi, Takashi; Miyamoto, Yoshihisa

2016-12-01

The origin of two maxima in specific heat observed at the higher and the lower temperatures in the glass-transition region in the heating process has been studied for polymethyl methacrylate and polyvinyl chloride using differential scanning calorimetry, and the calculation was done using the phenomenological model equation under a thermal history of the typical annealing experiment composed of cooling, annealing, and heating. The higher maximum is observed above the glass-transition temperature, and it remains almost unchanged independent of annealing time t_{a}, while the lower one is observed above an annealing temperature T_{a} and shifts toward the higher one, increasing its magnitude with t_{a}. The analysis by the phenomenological model equation proposed in order to interpret the memory effect in the glassy state clarifies that under a typical annealing history, two maxima in specific heat essentially appear. The shift of the lower maximum toward higher temperatures from above T_{a} is caused by an increase in the amount of relaxation during annealing with t_{a}. The annealing temperature and the amount of relaxation during annealing play a major role in the determination of the number of maxima in the specific heat.

Annealing effects on electrical behavior of gold nanoparticle film: Conversion of ohmic to non-ohmic conductivity

NASA Astrophysics Data System (ADS)

Ebrahimpour, Zeinab; Mansour, Nastaran

2017-02-01

This paper reports on the electrical behavior of self-assembled gold nanoparticle films before and after high-temperature annealing in ambient environment. These films are made by depositing gold nanoparticles from a colloidal solution on glass substrates using centrifuge deposition technique. The current-voltage (I-V) characteristics of these films exhibits ohmic and non-ohmic properties for un-annealed and annealed films respectively. As the annealing time duration increases, the onset of non-ohmic behavior occurs at higher voltages. To understand the underlying mechanisms for the observed electrical conduction behavior in these films and how electrical conduction is effected by film morphology and structural properties before and after annealing, systematic comparative studies based on scanning electron microscopy (SEM), UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) have been performed. The morphology of the films shows that the assembled gold nanoparticles are distributed on the substrate in a random way before annealing. After 2 h annealing gold nanoparticles exhibit a higher filling fraction when examined by SEM, which means that they coalesce, upon annealing, with respect to un-annealed films. The UV-vis absorption spectra of the films show that there is a red-shift and broadening in the absorption band for the annealed films. The observed phenomenon is related to the plasmon near-field coupling effect and suggests that the nanoparticle ensembles interspacing has decreased. The structural and crystallinity of the films exhibit amorphous structure before annealing and pure crystalline phases with a preferential growth direction along the (111) plane after annealing. The XPS analysis further suggests the existence of the stable thin oxide layer in the phase of Au2O3 in the annealed films. The I-V characteristics have been described by Simmons' model for tunnel transport through metal-insulator-metal (MIM) junctions. The Fowler-Nordheim (F-N) plots show the transition of the in-plane charge transport mechanism from direct tunneling to field emission in annealed films. Our results suggest that, the formation of a thin layer of Au2O3 , the proximity of the nanoparticles as well as their higher filling fraction are important parameters related with the tunneling process enhancement. The observed non-ohmic conductivity property can make these self-assembled gold nanoparticle films very useful structures in different applications such as sensing, resistors and other nanoelectronic applications.

Pattern Laser Annealing by a Pulsed Laser

NASA Astrophysics Data System (ADS)

Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

1981-10-01

Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

NASA Astrophysics Data System (ADS)

Raship, N. A.; Sahdan, M. Z.; Adriyanto, F.; Nurfazliana, M. F.; Bakri, A. S.

2017-01-01

Copper oxide films were grown on silicon substrates by sol-gel dip coating method. In order to study the effects of annealing temperature on the properties of copper oxide films, the temperature was varied from 200 °C to 450 °C. In the process of dip coating, the substrate is withdrawn from the precursor solution with uniform velocity to obtain a uniform coating before undergoing an annealing process to make the copper oxide film polycrystalline. The physical properties of the copper oxide films were measured by an X-ray diffraction (XRD), a field emission scanning electron microscope (FESEM), an atomic force microscopy (AFM) and a four point probe instrument. From the XRD results, we found that pure cuprite (Cu2O) phase can be obtained by annealing the films annealed at 200 °C. Films annealed at 300 °C had a combination phase which consists of tenorite (CuO) and cuprite (Cu2O) phase while pure tenorite (CuO) phase can be obtained at 450 °C annealing temperature. The surface microstructure showed that the grains size is increased whereas the surface roughness is increased and then decreases by increasing in annealing temperature. The films showed that the resistivity decreased with increasing annealing temperature. Consequently, it was observed that annealing temperature has strong effects on the structural, morphological and electrical properties of copper oxide films.

Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array

NASA Astrophysics Data System (ADS)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-01-01

This work presents the effects of in situ thermal annealing under antimony overpressure on the structural, electrical, and optical properties of III-Sb (GaSb and InSb) grown on (100) GaAs using an interfacial misfit array to accommodate the lattice mismatch. Both the sample growth and the in situ thermal annealing were carried out in the in the molecular beam epitaxy system, and the temperature of the as-grown sample was increased to exceed its growth temperature during the annealing. X-ray diffraction demonstrates nearly fully relaxed as-grown and annealed III-Sb layers. The optimal annealing temperatures and durations are for 590 °C, 5 min for GaSb and 420 °C, 15 min for InSb, respectively. In situ annealing decreased the surface roughness of the III-Sb layers. X-ray reciprocal space mapping and transmission electron microscopy observation showed stable interfacial misfit arrays, and no interfacial diffusion occurred in the annealed III-Sb layers. A Hall measurement of unintentionally doped III-Sb layers showed greater carrier mobility and a lower carrier concentration in the annealed samples at both 77 and 300 K. In situ annealing improved the photoresponsivity of GaSb and InSb photoconductors grown on GaAs in the near- and mid-infrared ranges, respectively.

Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

PubMed Central

Behzad, Kasra; Mat Yunus, Wan Mahmood; Talib, Zainal Abidin; Zakaria, Azmi; Bahrami, Afarin

2012-01-01

Porous silicon (PSi) layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM). Photoacoustic spectroscopy (PAS) measurements were carried out to measure the thermal diffusivity (TD) of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing. PMID:28817037

Thermomechanical Processing of Fe-6.9Al-2Cr-0.88C Steel: Intercritical Annealing Followed by Quench Tempering

NASA Astrophysics Data System (ADS)

Farahat, Ahmed Ismail Zaky; Mohamed, Masoud Ibrahim

2015-01-01

A hot forged Fe-0.88 pct C-6.9 pct Al steel was intercritically annealed at temperatures in the range of 1173 K to 1283 K (900 °C to 1010 °C), and subsequently tempered at 623 K (350 °C) to enhance the mechanical properties by microstructure modification. Room temperature compression tests were carried out to evaluate the influence of the intercritical annealing temperature on the mechanical properties. A substructure was present in the microstructure after each intercritical annealing treatment. The substructure was absent after annealing at 1263 K (990 °C) and higher temperatures. Over-aging occurred when the annealing temperature was increased to 1283 K (1010 °C). A remarkable increase in strength and ductility was achieved after annealing at 1263 K (990 °C).

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

NASA Astrophysics Data System (ADS)

Nagaraju, G.; Ravindranatha Reddy, K.; Rajagopal Reddy, V.

2017-11-01

The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights (BH) of as-deposited and 200 °C annealed SBDs are 0.80 eV ( I-V)/0.93 eV (C-V) and 0.87 eV (I-V)/1.03 eV (C-V). However, the BH rises to 0.99 eV (I-V)/　1.18 eV(C-V) and then slightly deceases to 0.92 eV (I-V)/1.03 eV (C-V) after annealing at 300 °C and 400 °C. The utmost BH is attained after annealing at 300 °C and thus the optimum annealing for SBD is 300 °C. By applying Cheung’s functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung’s and Ψ S-V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the N SS decreases up to 300 °C annealing and then slightly increases after annealing at 400 °C. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.

Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

PubMed

Fang, F; Markwitz, A

2009-05-01

Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

Annealing of Complementary DNA Sequences During Double-Strand Break Repair in Drosophila Is Mediated by the Ortholog of SMARCAL1.

PubMed

Holsclaw, Julie Korda; Sekelsky, Jeff

2017-05-01

DNA double-strand breaks (DSBs) pose a serious threat to genomic integrity. If unrepaired, they can lead to chromosome fragmentation and cell death. If repaired incorrectly, they can cause mutations and chromosome rearrangements. DSBs are repaired using end-joining or homology-directed repair strategies, with the predominant form of homology-directed repair being synthesis-dependent strand annealing (SDSA). SDSA is the first defense against genomic rearrangements and information loss during DSB repair, making it a vital component of cell health and an attractive target for chemotherapeutic development. SDSA has also been proposed to be the primary mechanism for integration of large insertions during genome editing with CRISPR/Cas9. Despite the central role for SDSA in genome stability, little is known about the defining step: annealing. We hypothesized that annealing during SDSA is performed by the annealing helicase SMARCAL1, which can anneal RPA-coated single DNA strands during replication-associated DNA damage repair. We used unique genetic tools in Drosophila melanogaster to test whether the fly ortholog of SMARCAL1, Marcal1, mediates annealing during SDSA. Repair that requires annealing is significantly reduced in Marcal1 null mutants in both synthesis-dependent and synthesis-independent (single-strand annealing) assays. Elimination of the ATP-binding activity of Marcal1 also reduced annealing-dependent repair, suggesting that the annealing activity requires translocation along DNA. Unlike the null mutant, however, the ATP-binding defect mutant showed reduced end joining, shedding light on the interaction between SDSA and end-joining pathways. Copyright © 2017 by the Genetics Society of America.

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2014 CFR

2014-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... operation using appropriate test data. (iii) The methods, including heat source, instrumentation and...

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2013 CFR

2013-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... operation using appropriate test data. (iii) The methods, including heat source, instrumentation and...

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2012 CFR

2012-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... operation using appropriate test data. (iii) The methods, including heat source, instrumentation and...

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2010 CFR

2010-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... operation using appropriate test data. (iii) The methods, including heat source, instrumentation and...

Benefits of Intercritical Annealing in Quenching and Partitioning Steel

NASA Astrophysics Data System (ADS)

Wang, X.; Liu, L.; Liu, R. D.; Huang, M. X.

2018-03-01

Compared to the quenching and partitioning (Q&P) steel produced by full austenization annealing, the Q&P steel produced by the intercritical annealing shows a similar ultimate tensile stress but a larger tensile ductility. This property is attributable to the higher volume fraction and the better mechanical stability of the retained austenite after the intercritical annealing. Moreover, intercritical annealing produces more ferrite and fewer martensite phases in the microstructure, making an additional contribution to a higher work hardening rate and therefore a better tensile ductility.

High-temperature annealing of graphite: A molecular dynamics study

NASA Astrophysics Data System (ADS)

Petersen, Andrew; Gillette, Victor

2018-05-01

A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

Reduced annealing temperatures in silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.

1981-01-01

Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

Yeast Pif1 Accelerates Annealing of Complementary DNA Strands

PubMed Central

2015-01-01

Pif1 is a helicase involved in the maintenance of nuclear and mitochondrial genomes in eukaryotes. Here we report a new activity of Saccharomyces cerevisiae Pif1, annealing of complementary DNA strands. We identified preferred substrates for annealing as those that generate a duplex product with a single-stranded overhang relative to a blunt end duplex. Importantly, we show that Pif1 can anneal DNA in the presence of ATP and Mg2+. Pif1-mediated annealing also occurs in the presence of single-stranded DNA binding proteins. Additionally, we show that partial duplex substrates with 3′-single-stranded overhangs such as those generated during double-strand break repair can be annealed by Pif1. PMID:25393406

Yeast Pif1 accelerates annealing of complementary DNA strands.

PubMed

Ramanagoudr-Bhojappa, Ramanagouda; Byrd, Alicia K; Dahl, Christopher; Raney, Kevin D

2014-12-09

Pif1 is a helicase involved in the maintenance of nuclear and mitochondrial genomes in eukaryotes. Here we report a new activity of Saccharomyces cerevisiae Pif1, annealing of complementary DNA strands. We identified preferred substrates for annealing as those that generate a duplex product with a single-stranded overhang relative to a blunt end duplex. Importantly, we show that Pif1 can anneal DNA in the presence of ATP and Mg(2+). Pif1-mediated annealing also occurs in the presence of single-stranded DNA binding proteins. Additionally, we show that partial duplex substrates with 3'-single-stranded overhangs such as those generated during double-strand break repair can be annealed by Pif1.

Development of {110}<001> annealing texture in Al-free and 0.1 %Mn-added 3 %Si-Fe alloy strips containing 95 ppm sulfur

NASA Astrophysics Data System (ADS)

Heo, N. H.; Yoon, G. G.

2010-04-01

The solubility of sulfur is calculated in 0.1 %Mn-added 3 %Si-Fe alloys. The segregation kinetics of sulfur is compared in the alloy containing 95 ppm sulfur, depending on the annealing atmosphere. The effects of pre-annealing and annealing atmosphere on final annealing texture are investigated. Segregation behaviors of sulfur at free surfaces and grain boundaries are compared and, during the selective growth, the importance of the grain boundary concentration of sulfur is emphasized. Finally, a correlation between the development of the annealing texture and segregation kinetics of sulfur in the alloy strip is discussed.

High annealing temperature induced rapid grain coarsening for efficient perovskite solar cells.

PubMed

Cao, Xiaobing; Zhi, Lili; Jia, Yi; Li, Yahui; Cui, Xian; Zhao, Ke; Ci, Lijie; Ding, Kongxian; Wei, Jinquan

2018-08-15

Thermal annealing plays multiple roles in fabricating high quality perovskite films. Generally, it might result in large perovskite grains by elevating annealing temperature, but might also lead to decomposition of perovskite. Here, we study the effects of annealing temperature on the coarsening of perovskite grains in a temperature range from 100 to 250 °C, and find that the coarsening rate of the perovskite grain increase significantly with the annealing temperature. Compared with the perovskite films annealed at 100 °C, high quality perovskite films with large columnar grains are obtained by annealing perovskite precursor films at 250 °C for only 10 s. As a result, the power conversion efficiency of best solar cell increased from 12.35% to 16.35% due to its low recombination rate and high efficient charge transportation in solar cells. Copyright © 2018. Published by Elsevier Inc.

High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shuo; Ma, Ping, E-mail: maping@semi.ac.cn; Liu, Boting

2016-06-15

High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 10{sup 10}Ω/sq in the light and 2 × 10{sup 11}Ω/sq in the dark when the in situ annealing temperature reached 970{sup ∘}C. The acquirement of high-resistive layers is attributed to the generation ofmore » indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.« less

Ferromagnetic cobalt nanocrystals achieved by soft annealing approach—From individual behavior to mesoscopic organized properties

NASA Astrophysics Data System (ADS)

Petit, C.; Wang, Z. L.; Pileni, M. P.

2007-05-01

By gentle annealing, 7 nm cobalt nanoparticles synthesized by soft chemistry, are transformed to hard magnetic hexagonal close packed (HCP) cobalt nanocrystals without changing the size, size distribution and passivating layer. This method permits to recover the nanocrystals isolated in solution after the annealing process and then to study the magnetic properties of the HCP cobalt nanocrystals at isolated status or in a self-organized film. Monolayer self-assembly of the HCP cobalt nanocrystals is obtained, and due to the dipolar interaction, ferromagnetic behavior close to room temperature has been observed. The magnetic properties differ significantly due to the influence of the substrate on the annealing process. This different approach of the annealing process of nanocrystals is compared to the classical approach of annealing in which the nanocrystals are first deposited on a substrate and then annealed.

Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

NASA Astrophysics Data System (ADS)

Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

2015-08-01

Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 1026 m-2) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min-1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2011 CFR

2011-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... insulation, and on detrimental effects, if any, on containment and the biological shield. If the design...

Activation of boron and recrystallization in Ge preamorphization implant structure of ultra shallow junctions by microwave annealing

NASA Astrophysics Data System (ADS)

Tsai, Ming Han; Wu, Chi-Ting; Lee, Wen-His

2014-04-01

In this study, high-current and low-energy (400 eV) ion implantation and low-temperature microwave annealing were employed to achieve ultra shallow junctions. To use the characteristic of microwave annealing more effectively, two-step microwave annealing was also employed. In the first step annealing, a high-power (2400 W; ˜500 °C) microwave was used to achieve solid-state epitaxial regrowth (SPER) and enhance microwave absorption. In the second step of annealing, unlike in conventional thermal annealing, which requires a higher energy to activate the dopant, a 600 W (˜250 °C) microwave was used to achieve low sheet resistance. The device subjected to two-step microwave annealing at 2400 W for 300 s + 600 W for 600 s has the lowest Vth. It also has the lowest subthreshold swing (SS), which means that it has the highest cap ability to control sub threshold current. In these three devices, the largest Ion/Ioff ratio is 2.203 × 106, and the smallest Ion/Ioff ratio is 2.024 × 106.

Effects of annealing on arrays of Ge nanocolumns formed by glancing angle deposition

NASA Astrophysics Data System (ADS)

Khare, C.; Gerlach, J. W.; Höche, T.; Fuhrmann, B.; Leipner, H. S.; Rauschenbach, B.

2012-10-01

Post-deposition thermal annealing of glancing angle deposited Ge nanocolumn arrays was carried out in a continuous Ar-flow at temperatures ranging from TA = 300 to 800 °C for different annealing durations. Morphological alterations and the recrystallization process induced by the thermal annealing treatment were investigated for the Ge nanocolumns deposited on planar and pre-patterned Si substrates. From X-ray diffraction (XRD) measurements, the films annealed at TA ≥ 500 °C were found to be polycrystalline. On planar Si substrates, at TA = 600 °C nanocolumns exhibited strong coarsening and merging, while a complete disintegration of the nanocolumns was detected at TA = 700 °C. The morphology of nanostructures deposited on pre-patterned substrates differs substantially, where the merging or column-disintegration effect was absent at elevated annealing temperatures. The two-arm-chevron nanostructures grown on pre-patterned substrates retained their complex shape and morphology, after extended annealing intervals. Investigations by transmission electron microscopy revealed nanocrystalline domains of the order of 5-30 nm (in diameter) present within the chevron structures after the annealing treatment.

Molecular motions in sucrose-PVP and sucrose-sorbitol dispersions-II. Implications of annealing on secondary relaxations.

PubMed

Bhattacharya, Sisir; Bhardwaj, Sunny P; Suryanarayanan, Raj

2014-10-01

To determine the effect of annealing on the two secondary relaxations in amorphous sucrose and in sucrose solid dispersions. Sucrose was co-lyophilized with either PVP or sorbitol, annealed for different time periods and analyzed by dielectric spectroscopy. In an earlier investigation, we had documented the effect of PVP and sorbitol on the primary and the two secondary relaxations in amorphous sucrose solid dispersions (1). Here we investigated the effect of annealing on local motions, both in amorphous sucrose and in the dispersions. The average relaxation time of the local motion (irrespective of origin) in sucrose, decreased upon annealing. However, the heterogeneity in relaxation time distribution as well as the dielectric strength decreased only for β1- (the slower relaxation) but not for β2-relaxations. The effect of annealing on β2-relaxation times was neutralized by sorbitol while PVP negated the effect of annealing on both β1- and β2-relaxations. An increase in local mobility of sucrose brought about by annealing could be negated with an additive.

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

PubMed Central

Zhou, Shengqiang; Liu, Fang; Prucnal, S.; Gao, Kun; Khalid, M.; Baehtz, C.; Posselt, M.; Skorupa, W.; Helm, M.

2015-01-01

Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trapping of chalcogen into the silicon matrix. However, this method encounters the problem of surface segregation. In this paper, we propose a solid phase processing by flash-lamp annealing in the millisecond range, which is in between the conventional rapid thermal annealing and pulsed laser annealing. Flash lamp annealed selenium-implanted silicon shows a substitutional fraction of ~ 70% with an implanted concentration up to 2.3%. The resistivity is lower and the carrier mobility is higher than those of nanosecond pulsed laser annealed samples. Our results show that flash-lamp annealing is superior to laser annealing in preventing surface segregation and in allowing scalability. PMID:25660096

Effect of N2 Plasma Annealing on Properties of Fluorine Doped Silicon Dioxide Films with Low Dielectric Constant for Ultra-Large-Scale Integrated Circuits

NASA Astrophysics Data System (ADS)

Zhang, Wei; Wang, Peng-Fei; Ding, Shi-Jin; Wang, Ji-Tao; William, Wei Lee

2002-06-01

The influence of N2 plasma annealing on the properties of fluorine doped silicon oxide (SiOF) films is investigated. The stability of the dielectric constant of SiOF film is remarkably improved by the N2 plasma annealing. After enduring a moisture absorption test for six hours in a chamber with 60% humidity at 50°C, the dielectric constant variation of the annealed SiOF films is only 1.5%, while the variation for those SiOF films without annealing is 15.5%. Fourier transform infrared spectroscopic results show that the absorption peaks of Si-OH and H-OH of SiOF films are reduced after the N2 plasma annealing because the annealing can wipe off some unstable Si-F2 bonds in SiOF films. These unstable Si-F2 bonds are suitable to react with water, resulting in the degradation of SiOF film properties. Therefore, the N2 plasma annealing meliorates the properties of SiOF films with low dielectric constant.

Deformation and annealing response of TD-nickel chromium sheet

NASA Technical Reports Server (NTRS)

Kane, R. D.; Ebert, L. J.

1973-01-01

The deformation and annealing response of TD-nickel chromium (TD-NiCr) 0.1 inch thick sheet was examined using various cold-rolling and annealing treatments. Upon annealing (above 816 C (1500 F), the as-received material was converted from an initially ultra-fine grain size (average grain dimension 0.51 micron) to a large grain structure. Increases in grain size by a factor of 100 to 200 were observed for this transformation. However, in those material states where the large grain transformation was absent, a fine grain recrystallized structure formed upon annealing (above 732 C (1350 F)). The deformation and annealing response of TD-NiCr sheet was evaluated with respect to the processing related variables as mode and severity of deformation and annealing temperature. Results indicate that the large grain transformation, classical primary recrystallization occurs. Using selected materials produced during the deformation and annealing study, the elevated temperature tensile properties of TD-NiCr sheet were examined in the temperature range 593 C (1100 F) to 1093 C (2000 F). It was observed that the elevated temperature tensile properties of TD-NiCr sheet could be optimized by the stabilization of a large grain size in this material using the cold working and/or annealing treatments developed during the present investigation.

Positron annihilation study of the interfacial defects in ZnO nanocrystals: Correlation with ferromagnetism

NASA Astrophysics Data System (ADS)

Wang, Dong; Chen, Z. Q.; Wang, D. D.; Qi, N.; Gong, J.; Cao, C. Y.; Tang, Z.

2010-01-01

High purity ZnO nanopowders were pressed into pellets and annealed in air between 100 and 1200 °C. The crystal quality and grain size of the ZnO nanocrystals were investigated by x-ray diffraction 2θ scans. Annealing induces an increase in the grain size from 25 to 165 nm with temperature increasing from 400 to 1200 °C. Scanning electron microscopy and high-resolution transmission electron microscopy observations also confirm the grain growth during annealing. Positron annihilation measurements reveal vacancy defects including Zn vacancies, vacancy clusters, and voids in the grain boundary region. The voids show an easy recovery after annealing at 100-700 °C. However, Zn vacancies and vacancy clusters observed by positrons remain unchanged after annealing at temperatures below 500 °C and begin to recover at higher temperatures. After annealing at temperatures higher than 1000 °C, no positron trapping by the interfacial defects can be observed. Raman spectroscopy studies confirm the recovery of lattice disorder after annealing. Hysteresis loops are observed for the 100 and 400 °C annealed samples, which indicate ferromagnetism in ZnO nanocrystals. However, the ferromagnetism disappears after annealing above 700 °C, suggesting that it might originate from the surface defects such as Zn vacancies.

Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

NASA Astrophysics Data System (ADS)

Vinci, Walter; Lidar, Daniel A.

2018-02-01

Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 <η ≤2 . We confirm that this scaling is preserved when NQAC is tested on a D-Wave 2000Q device (supporting up to 2048 qubits). In addition, we show that NQAC can also be used in sampling problems to lower the effective-temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

Complete p-type activation in vertical-gradient freeze GaAs co-implanted with gallium and carbon

NASA Astrophysics Data System (ADS)

Horng, S. T.; Goorsky, M. S.

1996-03-01

High-resolution triple-axis x-ray diffractometry and Hall-effect measurements were used to characterize damage evolution and electrical activation in gallium arsenide co-implanted with gallium and carbon ions. Complete p-type activation of GaAs co-implanted with 5×1014 Ga cm-2 and 5×1014 C cm-2 was achieved after rapid thermal annealing at 1100 °C for 10 s. X-ray diffuse scattering was found to increase after rapid thermal annealing at 600-900 °C due to the aggregation of implantation-induced point defects. In this annealing range, there was ˜10%-72% activation. After annealing at higher annealing temperatures, the diffuse scattered intensity decreased drastically; samples that had been annealed at 1000 °C (80% activated) and 1100 °C (˜100% activated) exhibited reciprocal space maps that were indicative of high crystallinity. The hole mobility was about 60 cm2/V s for all samples annealed at 800 °C and above, indicating that the crystal perfection influences dopant activation more strongly than it influences mobility. Since the high-temperature annealing simultaneously increases dopant activation and reduces x-ray diffuse scattering, we conclude that point defect complexes which form at lower annealing temperatures are responsible for both the diffuse scatter and the reduced activation.

Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

NASA Astrophysics Data System (ADS)

Wang, S.; Mirkhani, V.; Yapabandara, K.; Cheng, R.; Hernandez, G.; Khanal, M. P.; Sultan, M. S.; Uprety, S.; Shen, L.; Zou, S.; Xu, P.; Ellis, C. D.; Sellers, J. A.; Hamilton, M. C.; Niu, G.; Sk, M. H.; Park, M.

2018-04-01

We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical characteristics of the ZnO TFTs was systematically investigated. Photoluminescence (PL) spectra indicate that the crystal quality of the ZnO improves with increasing annealing temperature. Both the device turn-on voltage (Von) and threshold voltage (VT) shift to a positive voltage with increasing annealing temperature. As the annealing temperature is increased, both the subthreshold slope and the interfacial defect density (Dit) decrease. The field effect mobility (μFET) increases with annealing temperature, peaking at 800 °C and decreases upon further temperature increase. An improvement in transfer and output characteristics was observed with increasing annealing temperature. However, when the annealing temperature reaches 900 °C, the TFTs demonstrate a large degradation in both transfer and output characteristics, which is possibly produced by non-continuous coverage of the film. By using the temperature-dependent field effect measurements, the localized sub-gap density of states (DOSs) for ZnO TFTs with different annealing temperatures were determined. The DOSs for the subthreshold regime decrease with increasing annealing temperature from 600 °C to 800 °C and no substantial change was observed with further temperature increase to 900 °C.

Burst annealing of high temperature GaAs solar cells

NASA Technical Reports Server (NTRS)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

PWHT effect on the mechanical properties of borated stainless steel GTA weldments for nuclear shield

NASA Astrophysics Data System (ADS)

Park, T.-D.; Baek, K.-K.; Kim, D.-S.

1997-02-01

To improve ductility of the welded joint of B-added austenitic stainless steels, postweld annealing effect has been studied. Gas Tungsten Arc (GTA) welds of AlSI 304-B3 stainless steel plates were annealed either at 700 1100°C for 1 hour or at 1100°C and 1200°C, for 1 7 hours. Bending test of the welds in as-welded and annealed conditions resulted in cracks propagated along the welds' fusion line except the one annealed at 1200°C, which revealed no cracks. Tensile elongations of the as-welded and annealed welds at the temperature up to 1000°C were only a half value of the base metal, whereas the welds annealed at 1200°C had fully recovered the original elongation of the base metal. Charpy impact test result exhibited the same tendency with annealing temperature. Elongated and accicular morphology of Y-(Cr, Fe)2B eutectic phase at the Partially Melted Heat Affected Zone (P.M.HAZ) of welds seemed to be responsible for the poor ductility of the welds. The welds annealed at 1200°C for various durations, on the other hand, showed fully spheroidized eutectic phases at the P.M.HAZ with its size increased with annealing durations, suggesting that postweld annealing at the temperature as high as 1200°C is required for the welds to have ductility matching that of base metal.

Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

NASA Astrophysics Data System (ADS)

Rajagopal Reddy, V.; Asha, B.; Choi, Chel-Jong

2017-06-01

The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures. Experimental analysis showed that the barrier height (BH) of the Zr/p-GaN Schottky diode increases with annealing at 400 °C (0.92 eV (I-V)/1.09 eV (C-V)) compared to the as-deposited one (0.83 eV (I-V)/0.93 eV (C-V)). However, the BH decreases after annealing at 500 °C. Also, at different annealing temperatures, the series resistance and BH are assessed by Cheung's functions and their values compared. Further, the interface state density (N SS) of the diode decreases after annealing at 400 °C and then somewhat rises upon annealing at 500 °C. Analysis reveals that the maximum BH is obtained at 400 °C, and thus the optimum annealing temperature is 400 °C for the diode. The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr-N phases with increasing annealing up to 400 °C. The BH reduces for the diode annealed at 500 °C, which may be due to the formation of Ga-Zr phases at the junction. The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process. Project supported by the R&D Program for Industrial Core Technology (No. 10045216) and the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project (No. N0001363) Funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doualle, T.; Gallais, L., E-mail: laurent.gallais@fresnel.fr; Cormont, P.

We investigate the effect of different heat treatments on the laser-induced damage probabilities of fused silica samples. Isothermal annealing in a furnace is applied, with different temperatures in the range 700–1100 °C and 12 h annealing time, to super-polished fused silica samples. The surface flatness and laser damage probabilities at 3 ns, 351 nm are measured before and after the different annealing procedures. We have found a significant improvement of the initial laser damage probabilities of the silica surface after annealing at 1050 °C for 12 h. A similar study has been conducted on CO{sub 2} laser-processed sites on the surface of the samples. Before andmore » after annealing, we have studied the morphology of the sites, the evolution of residual stress, and the laser-induced damage threshold measured at 351 nm, 3 ns. In this case, we observe that the laser damage resistance of the laser created craters can reach the damage level of the bare fused silica surface after the annealing process, with a complete stress relieve. The obtained results are then compared to the case of local annealing process by CO{sub 2} laser irradiation during 1 s, and we found similar improvements in both cases. The different results obtained in the study are compared to numerical simulations made with a thermo-mechanical model based on finite-element method that allows the simulation of the isothermal or the local annealing process, the evolution of stress and fictive temperature. The simulation results were found to be very consistent with experimental observations for the stresses evolution after annealing and estimation of the heat affected area during laser-processing based on the density dependence with fictive temperature. Following this work, the temperature for local annealing should reach 1330–1470 °C for an optimized reduction of damage probability and be below the threshold for material removal, whereas furnace annealing should be kept below the annealing point to avoid sample deformation.« less

DOE`s annealing prototype demonstration projects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, J.; Nakos, J.; Rochau, G.

1997-02-01

One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable throughmore » a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy`s Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana`s Marble Hill nuclear power plant. The MPR team`s annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company`s nuclear power plant at Midland, Michigan. This paper describes the Department`s annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges.« less

A helium-based model for the effects of radiation damage annealing on helium diffusion kinetics in apatite

NASA Astrophysics Data System (ADS)

Willett, Chelsea D.; Fox, Matthew; Shuster, David L.

2017-11-01

Widely used to study surface processes and the development of topography through geologic time, (U-Th)/He thermochronometry in apatite depends on a quantitative description of the kinetics of 4He diffusion across a range of temperatures, timescales, and geologic scenarios. Empirical observations demonstrate that He diffusivity in apatite is not solely a function of temperature, but also depends on damage to the crystal structure from radioactive decay processes. Commonly-used models accounting for the influence of thermal annealing of radiation damage on He diffusivity assume the net effects evolve in proportion to the rate of fission track annealing, although the majority of radiation damage results from α-recoil. While existing models adequately quantify the net effects of damage annealing in many geologic scenarios, experimental work suggests different annealing rates for the two damage types. Here, we introduce an alpha-damage annealing model (ADAM) that is independent of fission track annealing kinetics, and directly quantifies the influence of thermal annealing on He diffusivity in apatite. We present an empirical fit to diffusion kinetics data and incorporate this fit into a model that tracks the competing effects of radiation damage accumulation and annealing on He diffusivity in apatite through geologic time. Using time-temperature paths to illustrate differences between models, we highlight the influence of damage annealing on data interpretation. In certain, but not all, geologic scenarios, the interpretation of low-temperature thermochronometric data can be strongly influenced by which model of radiation damage annealing is assumed. In particular, geologic scenarios involving 1-2 km of sedimentary burial are especially sensitive to the assumed rate of annealing and its influence on He diffusivity. In cases such as basement rocks in Grand Canyon and the Canadian Shield, (U-Th)/He ages predicted from the ADAM can differ by hundreds of Ma from those predicted by other models for a given thermal path involving extended residence between ∼40-80 °C.

Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

NASA Astrophysics Data System (ADS)

Lu, Xin-Ming

Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation in combination with two-step annealing is effective in fabricating ultra-shallow junctions.

Computational Multiqubit Tunnelling in Programmable Quantum Annealers

DTIC Science & Technology

2016-08-25

ARTICLE Received 3 Jun 2015 | Accepted 26 Nov 2015 | Published 7 Jan 2016 Computational multiqubit tunnelling in programmable quantum annealers...state itself. Quantum tunnelling has been hypothesized as an advantageous physical resource for optimization in quantum annealing. However, computational ...qubit tunnelling plays a computational role in a currently available programmable quantum annealer. We devise a probe for tunnelling, a computational

Temperature Scaling Law for Quantum Annealing Optimizers.

PubMed

Albash, Tameem; Martin-Mayor, Victor; Hen, Itay

2017-09-15

Physical implementations of quantum annealing unavoidably operate at finite temperatures. We point to a fundamental limitation of fixed finite temperature quantum annealers that prevents them from functioning as competitive scalable optimizers and show that to serve as optimizers annealer temperatures must be appropriately scaled down with problem size. We derive a temperature scaling law dictating that temperature must drop at the very least in a logarithmic manner but also possibly as a power law with problem size. We corroborate our results by experiment and simulations and discuss the implications of these to practical annealers.

Implant Monitoring Measurements On Ultra Shallow Implants Before And After Anneal Using Photomodulated Reflection And Junction Photovoltage Measurement Techniques

NASA Astrophysics Data System (ADS)

Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.

2011-01-01

Ultra shallow junctions are becoming widely used in the micro- and nanoelectronic devices, and novel measurement methods are needed to monitor the manufacturing processes. Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are non-contact, nondestructive techniques suitable for characterizing both the implantation and the annealing process. Tests verify that these methods are consistent with each other and by using them together, defects originating in the implantation and anneal steps can be separated.

Effect of annealing on structural, optical and electrical properties of SILAR synthesized CuO thin film

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-05-01

Nano crystalline CuO thin films were synthesize on glass substrate using SILAR technique. The structural, optical and electrical properties of the films were carried out for as deposited as well as for films post annealed in the temperature range 300 - 500° C. The X-ray diffraction pattern shows all the films are polycrystalline in nature with monoclinic phase. The crystallite size increase and lattice strain decreases with increase of annealing temperature indicating high quality of the films for annealed films. The value of band gap decreases with increases of annealing temperature of the film. The effect of annealing temperature on ionic conductivity and activation energy to electrical conduction process are discussed.

Efficiency of quantum vs. classical annealing in nonconvex learning problems

PubMed Central

Zecchina, Riccardo

2018-01-01

Quantum annealers aim at solving nonconvex optimization problems by exploiting cooperative tunneling effects to escape local minima. The underlying idea consists of designing a classical energy function whose ground states are the sought optimal solutions of the original optimization problem and add a controllable quantum transverse field to generate tunneling processes. A key challenge is to identify classes of nonconvex optimization problems for which quantum annealing remains efficient while thermal annealing fails. We show that this happens for a wide class of problems which are central to machine learning. Their energy landscapes are dominated by local minima that cause exponential slowdown of classical thermal annealers while simulated quantum annealing converges efficiently to rare dense regions of optimal solutions. PMID:29382764

Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing.

PubMed

Jiang, Jing; Jacobs, Alan G; Wenning, Brandon; Liedel, Clemens; Thompson, Michael O; Ober, Christopher K

2017-09-20

Laser spike annealing was applied to PS-b-PDMS diblock copolymers to induce short-time (millisecond time scale), high-temperature (300 to 700 °C) microphase segregation and directed self-assembly of sub-10 nm features. Conditions were identified that enabled uniform microphase separation in the time frame of tens of milliseconds. Microphase ordering improved with increased temperature and annealing time, whereas phase separation contrast was lost for very short annealing times at high temperature. PMMA brush underlayers aided ordering under otherwise identical laser annealing conditions. Good long-range order for sub-10 nm cylinder morphology was achieved using graphoepitaxy coupled with a 20 ms dwell laser spike anneal above 440 °C.

Effect of annealing induced residual stress on the resonance frequency of SiO2 microcantilevers

NASA Astrophysics Data System (ADS)

Balasubramanian, S.; Prabakar, K.; Tripura Sundari, S.

2018-04-01

In the present work, effect of residual stress, induced due to annealing of SiO2 microcantilevers (MCs) on their resonance frequency is studied. SiO2MCs of various dimensions were fabricated using direct laser writer & wet chemical etching method and were annealed at 800 °C in oxygen environment, post release. The residual stress was estimated from the deflection profile of the MCs measured using 3D optical microscope, before and after annealing. Resonance frequency of the MCs was measured using nano-vibration analyzer and was found to change after annealing. Further the frequency shift was found to depend on the MC dimensions. This is attributed to the large stress gradients induced by annealing and associated stiffness changes.

Effect of thermal annealing on the structural, optical and dielectrical properties of P3HT:PC{sub 70}BM nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aloui, Walid, E-mail: alouiwalid26@yahoo.fr; Adhikari, Tham; Nunzi, Jean-Michel

2016-06-15

Highlights: • A typical structure of ITO/PEDOT: PSS/P3HT: PC{sub 70}BM/Al was fabricated. • Charge carrier diffusion and recombination have been calculated. • AFM and optical results show that thermal annealing promotes the phase separation. • The annealing process improves the transport of charges. - Abstract: The effect of thermal annealing on the optical, structural and the dielectric properties of P3HT:PC{sub 70}BM blended films were investigated. By means of atomic force microscopy, we observed the morphology evolution of the annealed P3HT:PC{sub 70}BM nanocomposites. Raman spectroscopy showed a substantial ordering in the polymer film after annealing. The absorption spectra of the annealedmore » P3HT:PC{sub 70}BM films were improved and red shifted than un-annealed samples. The results indicate that the P3HT in the nanocomposite becomes an ordered structure with annealing. The ordered P3HT facilitates the charge transport. From the photoluminescence measurements, the formation of polymer crystallites was observed upon annealing. Thus, the device efficiency reaches 2.2% after annealing at 150 °C. Impedance spectroscopy shows the classical complex plan curves; the low frequency is related to the effective lifetime of charge carriers and the high frequency corresponds to the diffusion time of these carriers. Global mobilities are in the range 3.8–4.6 × 10{sup −3} cm{sup 2} V{sup −1} s{sup −1}.« less

Effect of annealing temperature on the stress and structural properties of Ge core fibre

NASA Astrophysics Data System (ADS)

Zhao, Ziwen; Cheng, Xueli; Xue, Fei; He, Ting; Wang, Tingyun

2017-09-01

Effect of annealing temperature on the stress and structural properties of a Ge core fibre via the molten core drawing (MCD) method is investigated using Raman spectroscopy, Scanning electronic microscopy (SEM), and X-ray diffraction. The experimental results showed that the Raman peak position of the Ge fibre shifted from 297.6 cm-1 to 300.5 cm-1, and the FWHM value decreased from 4.53 cm-1 to 4.31 cm-1, when the annealing is carried out at 700 °C, 800 °C, and 900 °C, respectively. For the Ge core annealed at 900 °C, an apparent crystal grain can be seen in the SEM image, and the diffraction peaks of the (3 3 1) plane are generated in the X-ray diffraction spectra. These results show that optimising the annealing temperature allows the release of the residual stress in the Ge core. When the Ge core fibre is annealed at 900 °C, it exhibits the lowest residual stress and the highest crystal quality, and the quality improvement relative to that of the sample annealed at 800 °C is significant. Hence, annealing at around 900 °C can greatly improve the quality of a Ge core fibre. Further performance improvement of the Ge core fibre by annealing techniques can be anticipated.

Processing-Structure-Property Relationships in Laser-Annealed PbSe Nanocrystal Thin Films.

PubMed

Treml, Benjamin E; Robbins, Andrew B; Whitham, Kevin; Smilgies, Detlef-M; Thompson, Michael O; Hanrath, Tobias

2015-01-01

As nanocrystal (NC) synthesis techniques and device architectures advance, it becomes increasingly apparent that new ways of connecting NCs with each other and their external environment are required to realize their considerable potential. Enhancing inter-NC coupling by thermal annealing has been a long-standing challenge. Conventional thermal annealing approaches are limited by the challenge of annealing the NC at sufficiently high temperatures to remove surface-bound ligands while at the same time limiting the thermal budget to prevent large-scale aggregation. Here we investigate nonequilibrium laser annealing of NC thin films that enables separation of the kinetic and thermodynamic aspects of nanocrystal fusion. We show that laser annealing of NC assemblies on nano- to microsecond time scales can transform initially isolated NCs in a thin film into an interconnected structure in which proximate dots "just touch". We investigate both pulsed laser annealing and laser spike annealing and show that both annealing methods can produce "confined-but-connected" nanocrystal films. We develop a thermal transport model to rationalize the differences in resulting film morphologies. Finally we show that the insights gained from study of nanocrystal mono- and bilayers can be extended to three-dimensional NC films. The basic processing-structure-property relationships established in this work provide guidance to future advances in creating functional thin films in which constituent NCs can purposefully interact.

Improved perovskite phototransistor prepared using multi-step annealing method

NASA Astrophysics Data System (ADS)

Cao, Mingxuan; Zhang, Yating; Yu, Yu; Yao, Jianquan

2018-02-01

Organic-inorganic hybrid perovskites with good intrinsic physical properties have received substantial interest for solar cell and optoelectronic applications. However, perovskite film always suffers from a low carrier mobility due to its structural imperfection including sharp grain boundaries and pinholes, restricting their device performance and application potential. Here we demonstrate a straightforward strategy based on multi-step annealing process to improve the performance of perovskite photodetector. Annealing temperature and duration greatly affects the surface morphology and optoelectrical properties of perovskites which determines the device property of phototransistor. The perovskite films treated with multi-step annealing method tend to form highly uniform, well-crystallized and high surface coverage perovskite film, which exhibit stronger ultraviolet-visible absorption and photoluminescence spectrum compare to the perovskites prepared by conventional one-step annealing process. The field-effect mobilities of perovskite photodetector treated by one-step direct annealing method shows mobility as 0.121 (0.062) cm2V-1s-1 for holes (electrons), which increases to 1.01 (0.54) cm2V-1s-1 for that treated with muti-step slow annealing method. Moreover, the perovskite phototransistors exhibit a fast photoresponse speed of 78 μs. In general, this work focuses on the influence of annealing methods on perovskite phototransistor, instead of obtains best parameters of it. These findings prove that Multi-step annealing methods is feasible to prepared high performance based photodetector.

Vacuum-annealing induced enhancements in the transparent conducting properties of Mo  +  F doped ZnO thin films

NASA Astrophysics Data System (ADS)

Dineshbabu, N.; Ravichandran, K.

2017-09-01

The decisive aim of the present study is to enhance the transparent conducting properties of Mo  +  F co-doped ZnO films through annealing. In this work, Mo  +  F co-doped ZnO (MFZO) films were deposited on glass substrates at a deposition temperature of 350 °C using a home-made nebulizer spray pyrolysis technique and the prepared samples were annealed under air and vacuum atmosphere at 400 °C for 2 h. The structural, electrical, optical, surface morphological and elemental properties of as-deposited, air-annealed and vacuum-annealed samples were compared using various analytical techniques. The vacuum-annealed sample shows lowest resistivity of 1.364  ×  10-3 Ω cm and high transmittance of 90% in the visible region with high ohmic conducting nature. The optical bandgap of the sample was found to be increased to 3.36 eV after vacuum annealing treatment. The XRD patterns of the films confirmed the polycrystalline nature. The PL measurements show the defect levels of the deposited films. The FESEM and AFM studies show an increase in the grain size and roughness of the films, respectively, after vacuum-annealing treatment. The presence of the elements before and after annealing treatment was confirmed using XPS analysis.

Effect of solvent and subsequent thermal annealing on the performance of phenylenevinylene copolymer: PCBM solar cells.

PubMed

Sharma, G D; Suresh, P; Sharma, S S; Vijay, Y K; Mikroyannidis, John A

2010-02-01

The morphology of the photoactive layer used in the bulk heterojunction photovoltaic devices is crucial for efficient charge generation and their collection at the electrodes. We investigated the solvent vapor annealing and thermal annealing effect of an alternating phenylenevinylene copolymer P:PCBM blend on its morphology and optical properties. The UV-visible absorption spectroscopy shows that both solvent and thermal annealing can result in self-assembling of copolymer P to form an ordered structure, leading to enhanced absorption in the red region and hole transport enhancement. By combining the solvent and thermal annealing of the devices, the power conversion efficiency is improved. This feature was attributed to the fact that the PCBM molecules begin to diffuse into aggregates and together with the ordered copolymer P phase form bicontinuous pathways in the entire layer for efficient charge separation and transport. Furthermore, the measured photocurrent also suggests that the space charges no longer limit the values of the short circuit current (J(sc)) and fill factor (FF) for solvent-treated and thermally annealed devices. These results indicate that the higher J(sc) and PCE for the solvent-treated and thermally annealed devices can be attributed to the phase separation of active layers, which leads to a balanced carrier mobility. The overall PCE of the device based on the combination of solvent annealing and thermal annealing is about 3.7 %.

Microstructure evolution during helium irradiation and post-irradiation annealing in a nanostructured reduced activation steel

NASA Astrophysics Data System (ADS)

Liu, W. B.; Ji, Y. Z.; Tan, P. K.; Zhang, C.; He, C. H.; Yang, Z. G.

2016-10-01

Severe plastic deformation, intense single-beam He-ion irradiation and post-irradiation annealing were performed on a nanostructured reduced activation ferritic/martensitic (RAFM) steel to investigate the effect of grain boundaries (GBs) on its microstructure evolution during these processes. A surface layer with a depth-dependent nanocrystalline (NC) microstructure was prepared in the RAFM steel using surface mechanical attrition treatment (SMAT). Microstructure evolution after helium (He) irradiation (24.8 dpa) at room temperature and after post-irradiation annealing was investigated using Transmission Electron Microscopy (TEM). Experimental observation shows that GBs play an important role during both the irradiation and the post-irradiation annealing process. He bubbles are preferentially trapped at GBs/interfaces during irradiation and cavities with large sizes are also preferentially trapped at GBs/interfaces during post-irradiation annealing, but void denuded zones (VDZs) near GBs could not be unambiguously observed. Compared with cavities at GBs and within larger grains, cavities with smaller size and higher density are found in smaller grains. The average size of cavities increases rapidly with the increase of time during post-irradiation annealing at 823 K. Cavities with a large size are observed just after annealing for 5 min, although many of the cavities with small sizes also exist after annealing for 240 min. The potential mechanism of cavity growth behavior during post-irradiation annealing is also discussed.

CdO thin films based on the annealing temperature differences prepared by sol-gel method and their heterojunction devices

NASA Astrophysics Data System (ADS)

Soylu, M.; Yazici, T.

2017-12-01

Undoped CdO films were prepared on glass substrate and p-type silicon wafer using sol-gel spin coating method. The structural and optical properties of the films were investigated as a function of the annealing temperature. X-ray diffraction (XRD) patterns reveal that the films are formed from CdO with cubic crystal structure and (1 1 1) preferred orientation. It is seen that good crystallinity is due to the high annealing temperature. The surface morphology of the CdO films was found to be depending on the annealing temperature, showing cauliflower like structure. Optical band gaps for annealing temperature of 250 °C and 450 °C were found to be 2.49 eV and 2.27 eV, respectively, showing a decrease with raising temperature. Optics parameters such as extinction coefficient, refractive index, and surface-volume energy loss were determined with spectrophotometric analysis as a function of annealing temperature. CdO/p-Si heterojunction structure showed weak rectifying behavior. The diode parameters were found to be depending on annealing temperature. The results are encouraging to get better conjunction with CdO thin film component at optimize annealing temperature.

Influence of Annealing Duration on the Growth of V2O5 Nanorods Synthesized by Spray Pyrolysis Technique

NASA Astrophysics Data System (ADS)

Abd-Alghafour, N. M.; Ahmed, Naser M.; Hassan, Z.; Abubakar, D.; Bououdina, M.

2016-06-01

This paper deals with the investigation of annealing effects on the structural, morphological and optical properties of V2O5 nanorods (NRs) grown on the glass substrates by using chemical spray pyrolysis technique. The as-prepared samples were annealed at 500∘ for 40, 60 and 120 min in a quartz tube furnace. The high resolution X-ray diffraction (XRD) analysis revealed V2O5 NRs with preferred orientation along (001) plane. The crystallite size of the V2O5 NRs was increased by increasing the annealing duration. The morphological observations using field emission scanning electron microscope (FESEM) displayed NRs structures whose diameter and length were found to increase with increase of the annealing duration. The transmission electron microscopy (TEM) analysis confirmed the orthorhombic structures of the NRs. The AFM measurements indicated an increase of the average surface roughness by increasing the annealing time. The Raman spectroscopy revealed V-O-V phonon mode in the NRs annealed for 120 min. The optical bandgap was found in the range 2.6-2.58eV and observed to decrease with various duration annealed.

Temperature dependent surface and spectral modifications of nano V2O5 films

NASA Astrophysics Data System (ADS)

Manthrammel, M. Aslam; Fatehmulla, A.; Al-Dhafiri, A. M.; Alshammari, A. S.; Khan, Aslam

2017-03-01

Nanocrystalline V2O5 films have been deposited on glass substrates at 300°C substrate temperature using thermal evaporation technique and were subjected to thermal annealing at different temperatures 350, 400, and 550°C. X-ray diffraction (XRD) spectra exhibit sharper and broader characteristic peaks respectively indicating the rearrangement of nanocrystallite phases with annealing temperatures. Other phases of vanadium oxides started emerging with the rise in annealing temperature and the sample converted completely to VO2 (B) phase at 550°C annealing. FESEM images showed an increase in crystallite size with 350 and 400°C annealing temperatures followed by a decrease in crystallite size for the sample annealed at 550°C. Transmission spectra showed an initial redshift of the fundamental band edge with 350 and 400°C while a blue shift for the sample annealed at 550°C, which was in agreement with XRD and SEM results. The films exhibited smart window properties as well as nanorod growth at specific annealing temperatures. Apart from showing the PL and defect related peaks, PL studies also supported the observations made in the transmission spectra.

Controlling the microstructure and associated magnetic properties of Ni 0.2Mn 3.2Ga 0.6 melt-spun ribbons by annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khan, Mahmud; Alshammari, Ohud; Balasubramanian, Balamurugan

2017-03-01

Here we report on the structural and magnetic properties of Ni 0.2Mn 3.2Ga 0.6 melt-spun ribbons. The as-spun ribbons were found to exhibit mixed cubic phases that transform to non-cubic structure upon annealing. Additionally, an amorphous phase was found to co-exist in all ribbons. The SEM images show that minor grain formation occurs on the as-spun ribbons. However, the formation of extensive nano-grains was observed on the surfaces of the annealed ribbons. While the as-spun ribbons exhibit predominantly paramagnetic behavior, the ribbons annealed under various thermal conditions were found to be ferromagnetic with a Curie temperature of about 380 K.more » The ribbons annealed at 450 °C for 30 minutes exhibit a large coercive field of about 2500 Oe. The experimental results show that the microstructure and associated magnetic properties of the ribbons can be controlled by annealing techniques. The coercive fields and the shape of the magnetic hysteresis loops vary significantly with annealing conditions. As a result, exchange bias effects have also been observed in the annealed ribbons.« less

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

NASA Technical Reports Server (NTRS)

Messenger, S. R.; Walters, R. J.; Summers, G. P.

1993-01-01

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing.

PubMed

Shen, Qiang; Zhou, Wei; Ran, Guang; Li, Ruixiang; Feng, Qijie; Li, Ning

2017-01-24

The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He⁺ ions with 1 × 10 17 ions/cm² fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. An irradiated layer distributed with fine helium bubbles was formed with a width of ~170 nm after helium ion irradiation. The size of gas bubbles increased with increasing annealing time and temperature and finally reached stable values at a given annealing temperature. According to the relationship between the bubble radii and annealing time, an empirical formula for calculating the bubble radii at the annealing temperature ranged from 600 to 1400 °C was given by fitting the experiment data. Planar bubble clusters (discs) were found to form on (0001) crystal plane at both sides of the bubble layer when the annealing temperature was at the range of 800-1200 °C. The mechanism of bubble growth during post-implantation annealing and the formation of bubble discs were also analyzed and discussed.

Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Sobri, M.; Shuhaimi, A.; Hakim, K. M.; Ganesh, V.; Mamat, M. H.; Mazwan, M.; Najwa, S.; Ameera, N.; Yusnizam, Y.; Rusop, M.

2014-06-01

Nickel (Ni)/indium tin oxide (ITO) nanostructures were deposited on glass and silicon (1 1 1) substrates by RF magnetron sputtering using nickel and ITO (In-Sn, 90-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air. The effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. We found the appearance of (6 2 2) peak in addition to (4 0 0) and (2 2 2) major peaks, which indicates an enhancement of the film crystallinity at high temperature annealing of 650 °C. The samples show higher transmittance of more than 90% at 470 nm after annealing which is suitable for blue light emitting diode (LED) application. The optical energy bandgap is shifted from 3.51 to 3.65 eV for the Ni/ITO film after annealing at 650 °C. In addition, increasing the annealing temperature improves the film electrical properties. The resistivity value decreases from 3.77 × 10-5 Ω cm to 1.09 × 10-6 Ω cm upon increasing annealing temperature.

Phase and structural transformations in VVER-440 RPV base metal after long-term operation and recovery annealing

NASA Astrophysics Data System (ADS)

Kuleshova, E. A.; Gurovich, B. A.; Maltsev, D. A.; Frolov, A. S.; Bukina, Z. V.; Fedotova, S. V.; Saltykov, M. A.; Krikun, E. V.; Erak, D. Yu; Zhurko, D. A.; Safonov, D. V.; Zhuchkov, G. M.

2018-04-01

This study was carried out to evaluate the possibility of 1st generation VVER-440 reactors lifetime extension by recovery re-annealing with the respect to base metal (BM). Comprehensive studies of the structure and properties of BM templates (samples cut from the inner surface of the shells in beltline region) of operating VVER-440 reactor (after primary standard recovery annealing 475 °C/150 h and subsequent long-term re-irradiation within reactor pressure vessel (RPV)) were conducted. These templates were also subjected to laboratory re-annealing 475 °C/150 h. TEM, SEM and APT studies of BM after laboratory re-annealing revealed significant recovery of radiation-induced hardening elements (Cu-rich precipitates and dislocation loops). Simultaneously a process of strong phosphorus accumulation at grain boundaries occurs since annealing temperature corresponds to the maximum reversible temper brittleness development. The latter is not observed for VVER-440 weld metal (WM). Comparative assessment of the properties return level for the beltline BM templates after recovery re-annealing 475 °C/150 h showed that it does not reach the one typical for beltline WM after the same annealing.

Effects of rapid thermal annealing on the contact of tungsten/p-diamond

NASA Astrophysics Data System (ADS)

Zhao, D.; Li, F. N.; Liu, Z. C.; Chen, X. D.; Wang, Y. F.; Shao, G. Q.; Zhu, T. F.; Zhang, M. H.; Zhang, J. W.; Wang, J. J.; Wang, W.; Wang, H. X.

2018-06-01

The electrical properties, surface morphology and interface characteristics of W/p-diamond contact before and after annealing have been investigated. It is shown that the as-fabricated W/p-diamond contact exhibited non-linear behavior. After annealing at a temperature higher than 400 °C, the W/p-diamond contact showed ohmic behaviour. The specific contact resistance of W/p-diamond was 8.2 × 10-4 Ω·cm2 after annealing at 500 °C for 3 min in a N2 ambient, which was extracted from fitting the I-V relationship of TLM. It is noted that the RMS roughness increases with the annealing temperature increasing, which could be ascribed to the formation of WOX by the reaction of W and oxygen at high temperature. The XPS measurement showed that the barrier height of the W/p-diamond is 0.45 ± 0.12 eV after annealing at 500 °C. Furthermore, the formation of defects at the W/p-diamond interface, probably created by the formation of tungsten carbide during rapid thermal annealing, should be responsible for the ohmic formation of W/p-diamond after annealing at high temperature.

A low thermal impact annealing process for SiO2-embedded Si nanocrystals with optimized interface quality

NASA Astrophysics Data System (ADS)

Hiller, Daniel; Gutsch, Sebastian; Hartel, Andreas M.; Löper, Philipp; Gebel, Thoralf; Zacharias, Margit

2014-04-01

Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical or chemical vapor deposition technologies. A major obstacle for the integration into a fabrication process is the typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ≥1100 °C for 1 h. This standard annealing procedure allows for interface qualities that correspond to more than 95% dangling bond defect free Si NCs. We study the possibilities to use rapid thermal annealing (RTA) and flash lamp annealing to crystallize the Si QDs within seconds or milliseconds at high temperatures. The Si NC interface of such samples exhibits huge dangling bond defect densities which makes them inapplicable for photovoltaics or optoelectronics. However, if the RTA high temperature annealing is combined with a medium temperature inert gas post-annealing and a H2 passivation, luminescent Si NC fractions of up to 90% can be achieved with a significantly reduced thermal load. A new figure or merit, the relative dopant diffusion length, is introduced as a measure for the impact of a Si NC annealing procedure on doping profiles of device structures.

Improvement of the thermal stability of Nb:TiO2-x samples for uncooled infrared detectors

NASA Astrophysics Data System (ADS)

Reddy, Y. Ashok Kumar; Kang, In-Ku; Shin, Young Bong; Lee, Hee Chul

2018-01-01

In order to reduce the sun-burn effect in a sample of the bolometric material Nb:TiO2-x , oxygen annealing was carried out. This effect can be examined by comparing thermal stability test results between the as-deposited and oxygen-atmosphere-annealed samples under high-temperature exposure conditions. Structural studies confirm the presence of amorphous and rutile phases in the as-deposited and annealed samples, respectively. Composition studies reveal the offset of oxygen vacancies in the Nb:TiO2-x samples through oxygen-atmosphere annealing. The oxygen atoms were diffused and seemed to occupy the vacant sites in the annealed samples. As a result, the annealed samples show better thermal stability performance than the as-deposited samples. The universal bolometric parameter (β) values were slightly decreased in the oxygen-annealed Nb:TiO2-x samples. Although bolometric performance was slightly decreased in the oxygen-annealed samples, high thermal stability would be the most essential factor in the case of special applications, such as the military and space industries. Finally, these results will be very useful for reducing the sun-burn effect in infrared detectors.

Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs

NASA Astrophysics Data System (ADS)

Sun, Li; Weng, Guo-En; Liang, Ming-Ming; Ying, Lei-Ying; Lv, Xue-Qin; Zhang, Jiang-Yong; Zhang, Bao-Ping

2014-06-01

Optical and electrical properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) annealed in pure O2 ambient (500 °C) and pure N2 ambient (800 °C) were systematically investigated. The temperature-dependent photoluminescence measurements showed that high-temperature thermal annealing in N2 ambient can induce indium clusters in InGaN MQWs. Although the deep traps induced by indium clusters can act as localized centers for carriers, there are many more dislocations out of the trap centers due to high-temperature annealing. As a result, the radiative efficiency of the sample annealed in N2 ambient was lower than that annealed in O2 ambient at room temperature. Electrical measurements demonstrated that the LEDs annealed in O2 ambient were featured by a lower forward voltage and there was an increase of ~41% in wall-plug efficiency at 20 mA in comparison with the LEDs annealed in N2 ambient. It is thus concluded that activation of the Mg-doped p-GaN layer should be carried out at a low-temperature O2 ambient so as to obtain LEDs with better performance.

Controlled atmosphere annealing of ion implanted gallium arsenide. Final report 1 Jul 76-30 Nov 79

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, C.L.; Eu, V.; Feng, M.

1980-08-01

Controlled atmosphere techniques were developed as an alternative to dielectric encapsulation for the high temperature anneal of ion implanted layers in GaAs. Two approaches: (1) the controlled atmosphere technique (CAT), and (2) the melt controlled ambient technique (MCAT) have been investigated. Using the CAT procedure, which involves annealing in flowing hydrogen with an arsenic overpressure, annealing without detectable surface erosion, has been performed at temperatures as high as 950 C, with or without encapsulants. Impurity diffusion, damage recovery, and electrical activity were investigated as a function of anneal parameters. Range studies of technologically important impurities such as S, Si, Se,more » Be and Mg were carried out. For the first time the role of the encapsulant on implanted profile degradation and the importance of Cr redistribution during the anneal cycle were determined. An improved CAT anneal system capable of production quantity throughput was developed and is in current use for device processing.« less

Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures.

PubMed

Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

2016-12-01

The mechanism of flat band voltage (VFB) shift for alternate La2O3/Al2O3 multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) measuring results indicate that the VFB of samples shift negatively for thinner bottom Al2O3 layer, increasing annealing temperature or longer annealing duration. Simultaneously, the diffusion of high-k material to interfaces in different multilayer structures and annealing conditions is observed by X-ray photoelectron spectroscopy (XPS). Based on the dipole theory, a correlation between the diffusion effect of La towards bottom Al2O3/Si interface and VFB shift is found. Without changing the dielectric constant k of films, VFB shift can be manipulated by controlling the single-layer cycles and annealing conditions of alternate high-k multilayer stack.

Effect of thermal annealing on the thermoluminescent properties of nano-calcium fluoride and its dose-response characteristics.

PubMed

Mundupuzhakal, J K; Biswas, R H; Chauhan, S; Varma, V; Acharya, Y B; Chakrabarty, B S

2015-12-01

Nano-CaF2, prepared by the co-precipitation method, was annealed under different annealing conditions to improve its thermoluminescence (TL) characteristics. Different annealing parameters, such as temperature (400-700°C), duration (1-4 h) and environment (vacuum and air), were explored. The effect on TL sensitivity, peak position (Tm) and full-width at half-maximum (FWHM) with respect to the different annealing conditions are discussed as they are the measure of crystallinity of the material. Annealing temperature of 500°C with annealing duration of two and a half hours in vacuum provided the highest luminescence response (i.e. maximum sensitivity, minimum peak temperature and FWHM). Wide detectable dose range (5 mGy to 2 kGy), absence of thermal quenching and sufficient activation energy (1.04 eV) of this phosphor make it suitable for dosimetric applications. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

A comparative study of annealing of waxy, normal and high-amylose maize starches: the role of amylose molecules.

PubMed

Wang, Shujun; Wang, Jinrong; Yu, Jinglin; Wang, Shuo

2014-12-01

The effect of annealing on starch structure and functionality of three maize starches (waxy, normal and high-amylose) was investigated, with the aim of understanding the role of amylose molecules during starch annealing. Amylose content, granular morphology and crystallinity of maize starches were little affected by annealing treatment. Annealing treatment did not alter the swelling power of waxy maize starch, but reduced the swelling power of normal and high-amylose maize starches. The thermal transition temperatures were increased, and the temperature range was decreased, but the enthalpy change was not affected greatly. The pasting viscosities of normal and waxy maize starches were decreased significantly, with the pasting temperature being little affected. The in vitro digestibility of three maize starches was not affected significantly by annealing treatment. Our results demonstrated that amylose molecules play an important role in the structural reorganization of starch granules during annealing treatment. Copyright © 2014 Elsevier Ltd. All rights reserved.

Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Choi, Hyung Wook; Kim, Kyung Hwan

2013-11-01

The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O2/(Ar+O2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 °C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 °C indicated amorphous properties, while those annealed above 400 °C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm2/C for thin film annealed at 200 °C. The WO3-x thin film annealed at 200 °C showed superior electrochromic properties.

Effect of annealing on structural and luminescence properties of Eu3+ doped NaYF4 phosphor

NASA Astrophysics Data System (ADS)

Pathak, Trilok K.; Kumar, Ashwini; Swart, H. C.; Kroon, R. E.

2018-04-01

Eu3+ doped NaYF4 phosphors have been synthesized by the combustion method. The effect of annealing on the structural, morphological and luminescence properties has been investigated. X-ray diffraction analysis revealed that the Eu3+ doped NaYF4 phosphors consisted of mixed phases: α-phase and β-phase which were affected by the annealing of the phosphor. The surface morphology showed a significant change with annealing in the Eu3+ doped NaYF4 phosphors. The elemental mapping and energy dispersive X-ray spectroscopy spectra proved the formation of the desired materials. The photoluminescence spectra illustrated the optical properties of Eu3+ in the as-prepared and annealed Eu3+ doped NaYF4 phosphors. The intensity of the peaks 5D0 → 7F2 and 5D0 → 7F1 varied in as-prepared and annealed samples. The lifetime of the Eu3+ luminescence at 615 nm was also weakly affected by the Eu3+ doping and annealing temperature.

Long annealing effect on spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition

NASA Astrophysics Data System (ADS)

Ono, Tatsuyoshi; Hirata, Satoshi; Amemiya, Yoshiteru; Tabei, Tetsuo; Yokoyama, Shin

2018-04-01

The effects of Ce content and annealing temperature on the electromotive force produced by spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition was investigated. The Ce content was first varied (x = 0,1,2,3) for a fixed annealing condition of 3 h at 900 °C. It was found that increasing the Ce content led to a decrease in electromotive force, which meant that x = 0 was the optimum Ce content. Next, the effect of annealing temperature was investigated for a Ce1Y2Fe5O12 film for an annealing time of 14 h. The highest electromotive force of 24.0 µV/50 °C was obtained for a sample annealed for 14 h at 800 °C, although the X-ray diffraction peaks were weaker than those for a sample annealed for 14 h at 950 °C.

Improved electrical properties after post annealing of Ba0.7Sr0.3TiO3 thin films for MIM capacitor applications

NASA Astrophysics Data System (ADS)

Rouahi, A.; Kahouli, A.; Sylvestre, A.; Jomni, F.; Defaÿ, E.; Yangui, B.

2012-11-01

Dielectric measurements have been performed on ion beam sputtering (IBS) barium strontium titanate Ba0.7Sr0.3TiO3 thin films at annealing temperatures 470 and 700 °C using impedance spectroscopy. The effect of the annealing temperature upon the electrical properties of the films is also investigated using capacitance-voltage techniques. Increasing annealing temperature suggested the increases of density and grain size, whereas the density of the trapped oxygen vacancy may be decreasing with increasing annealing temperature. The barrier height ( E a) of the oxygen vacancy decreases with increasing annealing temperature. The C- V characteristics were investigated in relation to the annealing temperature to identify the anomalous capacitance in the MIM configuration films. Among all measurement temperatures, it was observed that the data fit well by the "LGD" model. The interfacial effect and its dependence of morphology structure have been studied, and the results are discussed.

Boosting quantum annealer performance via sample persistence

NASA Astrophysics Data System (ADS)

Karimi, Hamed; Rosenberg, Gili

2017-07-01

We propose a novel method for reducing the number of variables in quadratic unconstrained binary optimization problems, using a quantum annealer (or any sampler) to fix the value of a large portion of the variables to values that have a high probability of being optimal. The resulting problems are usually much easier for the quantum annealer to solve, due to their being smaller and consisting of disconnected components. This approach significantly increases the success rate and number of observations of the best known energy value in samples obtained from the quantum annealer, when compared with calling the quantum annealer without using it, even when using fewer annealing cycles. Use of the method results in a considerable improvement in success metrics even for problems with high-precision couplers and biases, which are more challenging for the quantum annealer to solve. The results are further enhanced by applying the method iteratively and combining it with classical pre-processing. We present results for both Chimera graph-structured problems and embedded problems from a real-world application.

Direct observation of small cluster mobility and ripening. [during annealing of metal films on amorphous substrates

NASA Technical Reports Server (NTRS)

Heinemann, K.; Poppa, H.

1975-01-01

Direct evidence is reported for the simultaneous occurrence of Ostwald ripening and short-distance cluster mobility during annealing of discontinuous metal films on clean amorphous substrates. The annealing characteristics of very thin particulate deposits of silver on amorphized clean surfaces of single crystalline thin graphite substrates were studied by in-situ transmission electron microscopy (TEM) under controlled environmental conditions (residual gas pressure of 10 to the minus 9th power torr) in the temperature range from 25 to 450 C. Sputter cleaning of the substrate surface, metal deposition, and annealing were monitored by TEM observation. Pseudostereographic presentation of micrographs in different annealing stages, the observation of the annealing behavior at cast shadow edges, and measurements with an electronic image analyzing system were employed to aid the visual perception and the analysis of changes in deposit structure recorded during annealing. Slow Ostwald ripening was found to occur in the entire temperature range, but the overriding surface transport mechanism was short-distance cluster mobility.

[Fabrication of annealing equipment for optically stimulated luminescence (OSL) dosimeter].

PubMed

Nakagawa, Kohei; Hayashi, Hiroaki; Okino, Hiroki; Takegami, Kazuki; Okazaki, Tohru; Kobayashi, Ikuo

2014-10-01

The optically stimulated luminescence (OSL) dosimeter is a useful detector for measuring absorbed doses of X-rays. A small-type OSL dosimeter, "nanoDot", has recently been developed by Landauer, Inc., who also manufacture "microStar" reading equipment. However, additional annealing equipment is needed if the nanoDot OSL dosimeter is used repeatedly. The aim of this study was to fabricate suitable annealing equipment using commonly available products. Our device positions four fluorescent light tubes in a close configuration. The heat from the fluorescent light tubes is dissipated using fans. Experiments using diagnostic X-ray equipment were carried out to evaluate the capability of our annealing equipment. The results indicated that our equipment can fully anneal the nanoDot OSL dosimeter with annealing times of approximately 20 hours.

Growth of WSi2 in phosphorous-implanted W/«Si» couples

NASA Astrophysics Data System (ADS)

Ma, E.; Lim, B. S.; Nicolet, M.-A.; Alvi, N. S.; Hamdi, A. H.

1988-05-01

The thermal reaction of rf-sputter-deposited tungsten films with a (100) silicon substrate is investigated by vacuum furnace annealing and rapid thermal annealing. An irradiation of the W/Si interface by a phosphorous ion beam at room temperature prior to annealing promotes a uniform interfacial growth of WSi2. The growth of WSi2 follows diffusion-controlled kinetics during both furnace annealing and rapid thermal processing. A growth law of x2 = kt is obtained for furnace annealing between 690 and 740° C, where x is the thickness of the compound, t is the annealing duration after an initial incubation period and k = 62 (cm2/s) exp (--3.0 eV/kT). The surface smoothness of the suicide films improves with increasing ion dose.

Effects of substitution of Mo for Nb on less-common properties of Finemet alloys

NASA Astrophysics Data System (ADS)

Butvin, P.; Butvinová, B.; Silveyra, J. M.; Chromčíková, M.; Janičkovič, D.; Sitek, J.; Švec, P.; Vlasák, G.

2010-10-01

Particular properties of Fe-Nb/Mo-Cu-B-Si rapidly quenched ribbons were examined. Apart from minor variation, no significant difference due to the Mo for Nb substitution was observed in alloy density and its annealing-induced changes. The same holds for the anisotropic thermal expansion of as-cast ribbon when annealed and for induced anisotropy when annealed under stress. The Mo-substituted ribbons show only slightly higher crystallinity and lower coercivity if annealed in inert gas ambience than in vacuum. Some diversity in surface to interior heterogeneity of the differently annealed ribbons can still be distinguished. Preserving a minor percentage of Nb together with Mo does not seem substantiated to obtain favorable soft magnetic properties of ribbons annealed in inert gas.

Investigation of the annealing temperature effect on structural, morphology, dielectric and magnetic properties of BiFeO3 nanoparticles

NASA Astrophysics Data System (ADS)

Ranjbar, M.; Ghazi, M. E.; Izadifard, M.

2018-06-01

In this paper we have investigated the annealing temperature effect on the structure, morphology, dielectric and magnetic properties of sol-gel synthesized multiferroic BiFeO3 nanoparticles. X-ray diffraction spectroscopy revealed that all the samples have rhombohedrally distorted perovskite structure and the most pure BFO phase is obtained on the sample annealed at 800 °C. Field emission scanning electron microscopy (FESEM) revealed that increasing annealing temperature would increase the particle size. Decrease in dielectric constant was also observed by increasing annealing temperature. Vibrating sample method (VSM) analysis confirmed that samples annealed at 500-700 °C with particle size below the BFO's spiral spin structure length, have well saturated M-H curve and show ferromagnetic behavior.

Exponential Speedup of Quantum Annealing by Inhomogeneous Driving of the Transverse Field

NASA Astrophysics Data System (ADS)

Susa, Yuki; Yamashiro, Yu; Yamamoto, Masayuki; Nishimori, Hidetoshi

2018-02-01

We show, for quantum annealing, that a certain type of inhomogeneous driving of the transverse field erases first-order quantum phase transitions in the p-body interacting mean-field-type model with and without longitudinal random field. Since a first-order phase transition poses a serious difficulty for quantum annealing (adiabatic quantum computing) due to the exponentially small energy gap, the removal of first-order transitions means an exponential speedup of the annealing process. The present method may serve as a simple protocol for the performance enhancement of quantum annealing, complementary to non-stoquastic Hamiltonians.

Research on annealing and properties of TlBr crystals for radiation detector use

NASA Astrophysics Data System (ADS)

Zhiping, Zheng; Yongtao, Yu; Dongxiang, Zhou; Shuping, Gong; Qiuyun, Fu

2014-03-01

In this paper, annealing was carried out in air after cutting, polishing and etching to eliminate defects introduced by crystal and wafer preparation work. The effect of annealing temperature and time on the properties of TlBr crystals was investigated. The crystal quality was characterized by infrared (IR) transmittance spectrum, I-V measurement, XRD and energy response spectrum. In the annealing temperature range (100-320 °C) applied, it was found that higher temperature was more effective for improving quality. Furthermore, it is proved that an appropriate annealing time is vital for better crystal quality.

Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing

NASA Astrophysics Data System (ADS)

Liu, Fang; Prucnal, S.; Yuan, Ye; Heller, R.; Berencén, Y.; Böttger, R.; Rebohle, L.; Skorupa, W.; Helm, M.; Zhou, S.

2018-06-01

We report on the hyperdoping of silicon with selenium obtained by ion implantation followed by flash lamp annealing. It is shown that the degree of crystalline lattice recovery of the implanted layers and the Se substitutional fraction depend on the pulse duration and energy density of the flash. While the annealing at low energy densities leads to an incomplete recrystallization, annealing at high energy densities results in a decrease of the substitutional fraction of impurities. The electrical properties of the implanted layers are well-correlated with the structural properties resulting from different annealing processing.

Effect of initial hydrogen content of a titanium alloy on susceptibility to hot-salt stress-corrosion

NASA Technical Reports Server (NTRS)

Gray, H. R.

1971-01-01

The Ti-8Al-1Mo-1V alloy was tested in four conditions: mill annealed (70 ppM H), duplex annealed (70 ppM H), vacuum annealed to an intermediate (36 ppM) and a low (9 ppM H) hydrogen level. Material annealed at 650 C (duplex condition) exhibited resistance to hot-salt stress corrosion superior to that exhibited by material in the mill-annealed condition. Reduction of the alloy hydrogen content from 70 to as low as 9 ppM did not influence resistance to hot-salt stress corrosion embrittlement or cracking.

[Comporison Sduty of Microstructure by Metallographicalk on the Polarized Light and Texture by XRD of CC 5083 and CC 5182 Aluminium Alloy after Cold Rolling and Recrystallization].

PubMed

Chen, Ming-biao; Li, Yong-wei; Tan, Yuan-biao; Ma, Min; Wang, Xue-min; Liu, Wen-chang

2015-03-01

At present the study of relation between microstructure, texture and performance of CC 5083 aluminium alloy after cold tolling and recrystallization processes is still finitude. So that the use of the CC 5083 aluminium alloy be influenced. Be cased into electrical furnace, hot up with unlimited speed followed the furnace hot up to different temperature and annealed 2h respectively, and be cased into salt-beth furnace, hot up quickly to different temperature and annealed 30 min respectively for CC 5083 and CC 5182 aluminum alloy after cold roling with 91.5% reduction. The microstructure be watched use metallographic microscope, the texture be inspected by XRD. The start temperature of recrystallization and grain grow up temperature within annealing in the electric furnace of CC 5083 aluminum alloy board is 343 degrees C, and the shap of grain after grow up with long strip (the innovation point ); The start temperature of recrystallization within annealling in the salt bath furnace of CC 5083 is 343 degrees C. The start temperature and end temperature of recrystallization within annealling of CC 5083 and CC 5182 aluminum alloy is 371 degrees C. The grain grow up outstanding of cold rooled CC 5152 aluminum alloy after annealed with 454 degrees C in the electric furnace and salt bath furnace. The start temperature of grain grow up of CC 5083 alluminurn alloy annealed in the electric furnace and salt bath furnace respectively is higher than the start temperature of grain grow up of CC 5182 alluminum alloy annealed in the electric furnace and salt bath furnace respectively. The strat temperature of recrystallization grain grow up is higher than which annealled with other three manner annealing process. The recrystallization temperature of CC 5182 annealed in the salt bath furnace is higher than which annealed in the electric furnace. The recrystallization temperature of the surface layer of CC 5083 and CC 5182 aluminum alloy is higher than the inner layer (the innovation point). There is a difference each other of the structure and the texture of the four manner annealing aluminum alloy (the innovation point). There is a little difference at the recrystallization processes course reflectived by the observe results of structure transform and by the examination results of texture transmission.

Influence of cyclic annealing on the hardness and structure of high-speed steels

NASA Astrophysics Data System (ADS)

Smol'nikov, E. A.; Orestova, L. M.

1982-08-01

In individual cases with the necessity of rapid annealing of high-speed steel together with stepless annealing at 885-675°C, which is done in a single salt bath, cyclic stepped annealing in two salt baths with temperatures of 850 and 700°C and holds in each of them at from 10 to 30 min may be used.

Annealing effects on the chemical deposited CdS films and the electrical properties of CdS/CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Junfeng; Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt; Liao, Cheng, E-mail: Cliao@pku.edu.cn

2011-02-15

Graphical abstract: From XPS core level spectras, compared with as-depositing CdS (sample A), the Fermi level is shifting closer to the conduction band after annealing treatment in the oxygen (sample B) while it is shifting closer to the valence band after annealing treatment in the argon-hydrogen (sample C). That might be the main reason of the different performance of the final devices. The open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen, while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Research highlights: {yields} Twomore » different methods (oxidation and reduction) were used to anneal CdS films for CdTe solar cells. {yields} Electrical properties were analyzed by XPS (Fermi levels of CdS films). {yields} Annealing treatment in oxidation atmosphere could shift Fermi level of CdS film to higher position and consequently improve the CdS/CdTe junction and performance of solar cells. -- Abstract: CdS layers grown by chemical bath deposition (CBD) are annealed in the oxygen and argon-hydrogen atmosphere respectively. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen before the deposition of CdTe by close spaced sublimation (CSS), while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Electronic properties of the CdS films are investigated using X-ray photo-electron spectroscopy (XPS), which indicates that the Fermi level is shifting closer to the conduction band after annealing in the oxygen and consequently a higher open circuit voltage of the solar cell can be obtained.« less

Features of an annealing-induced thermoluminescence peak in α-Al2O3:C,Mg

NASA Astrophysics Data System (ADS)

Kalita, J. M.; Chithambo, M. L.

2017-08-01

We report the thermoluminescence glow curves of beta irradiated single crystal α-Al2O3:C,Mg after annealing at 700 and 900 °C. A glow curve measured at 1 °C/s from samples irradiated to 1 Gy following annealing at 700 and 900 °C shows a high intensity peak at 163 °C and seven secondary peaks of weaker intensity at 43, 73, 100, 195, 280, 329 and 370 °C. Comparing the position of the peaks in the annealed samples with those in an un-annealed one, it is observed that the peak at 100 °C appears only after annealing at and above 700 °C. Kinetic analysis of this annealing-induced peak was carried out using the initial rise, whole glow peak, peak shape, curve fitting and variable heating rate methods. The order of kinetics of the peak was determined as first order using various methods including the Tm-Tstop technique and the dependence of Tm on irradiation dose. The activation energy of the peak is about 1.01 eV and the frequency factor of the order of 1012 s-1. The peak was found to be affected by thermal quenching in analysis based on change of peak intensity with heating rate. The activation energy of thermal quenching was evaluated as 1.06 ± 0.08 eV. We speculate that the annealing-induced peak is due to formation of a new electron trap after destruction of the F22+(2 Mg) centre when the sample is annealed at 700 °C. The annealing-induced peak fades with storage between irradiation and measurement. It was also concluded that electrons from traps corresponding to secondary peaks get re-trapped at the main electron trap.

Development of microstructure and mechanical properties during annealing of a cold-swaged Co-Cr-Mo alloy rod.

PubMed

Mori, Manami; Sato, Nanae; Yamanaka, Kenta; Yoshida, Kazuo; Kuramoto, Koji; Chiba, Akihiko

2016-12-01

In this study, we investigated the evolution of the microstructure and mechanical properties during annealing of a cold-swaged Ni-free Co-Cr-Mo alloy for biomedical applications. A Co-28Cr-6Mo-0.14N-0.05C (mass%) alloy rod was processed by cold swaging, with a reduction in area of 27.7%, and then annealed at 1173-1423K for various periods up to 6h. The duplex microstructure of the cold-swaged rod consisted of a face-centered cubic γ-matrix and hexagonal closed-packed ε-martensite developed during cold swaging. This structure transformed nearly completely to the γ-phase after annealing and many annealing twin boundaries were observed as a result of the heat treatment. A small amount of the ε-phase was identified in specimens annealed at 1173K. Growth of the γ-grains occurred with increasing annealing time at temperatures ≥1273K. Interestingly, the grain sizes remained almost unchanged at 1173K and a very fine grain size of approximately 8μm was obtained. The precipitation that occurred during annealing was attributed to the limited grain coarsening during heat treatment. Consequently, the specimens treated at this temperature showed the highest tensile strength and lowest ductility among the specimens prepared. An elongation-to-failure value larger than 30% is sufficient for the proposed applications. The other specimens treated at higher temperatures possessed similar tensile properties and did not show any significant variations with different annealing times. Optimization of the present rod manufacturing process, including cold swaging and interval annealing heat treatment, is discussed. Copyright © 2016 Elsevier Ltd. All rights reserved.

Optical and solid state characterizaion of chemically deposited CuO/PbS double layer thin film

NASA Astrophysics Data System (ADS)

Chukwuemeka, Augustine; Nnabuchi Mishark, Nnamdi

2018-02-01

Optical and solid state characteristics of novel CuO/PbS double layer thin films were studied. Rutherford backscattering (RBS) technique deciphered the thicknesses of the films as 650 nm, 471 nm and 482 nm for as-deposited, annealed at 473 K and 673 K respectively. The XRD analysis depicts increase in grain size and peak intensity as temperature increases. The results of optical characterization show that thermal annealing has profound effects on all the optical and solid state parameters investigated. The absorbance increased with increase in temperature exhibiting maximum for the film annealed at 673 K. The transmittance of the film samples showed a decreasing trend with increase in temperature exhibiting minimum for the film annealed at 673 K. The absorption coefficient increases from 0.001 × 106 m-1 to 0.006 × 106 m-1 for as-deposited, 0.0025 × 106 m-1 to 0.0175 × 106 m-1 for the annealed at 473 K and 0.003 × 106 m-1 to 0.020 × 106 m-1 for the annealed at 673 K. The extinction coefficient increased with increased in temperature exhibiting a maximum for the film annealed at 673 K. The refractive index, real and imaginary dielectric constant do not have a trend with increase in annealing temperature. Increase in annealing temperature lowers the band gap from 4.13 eV for the as-deposited to 4.05 eV and 3.90 eV for the annealed at 473 K and 673 K respectively. The wide- bandgap materials permits devices to operate at much higher voltages, frequencies and temperatures than convection semiconductor materials. Thus, this film could be used for high power applications, light-emitting diodes, transducers and window layers for solar cell fabrication.

Excitation intensity dependent photoluminescence of annealed two-dimensional MoS{sub 2} grown by chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaplan, D.; Swaminathan, V.; Mills, K.

2016-06-07

Here, we present detailed results of Raman and photoluminescence (PL) characterization of monolayers of MoS{sub 2} grown by chemical vapor deposition (CVD) on SiO{sub 2}/Si substrates after thermal annealing at 150 °C, 200 °C, and 250 °C in an argon atmosphere. In comparison to the as-grown monolayers, annealing in the temperature range of 150–250 °C brings about significant changes in the band edge luminescence. It is observed that annealing at 150 °C gives rise to a 100-fold increase in the PL intensity and produces a strong band at 1.852 eV attributed to a free-to-bound transition that dominates over the band edge excitonic luminescence. This band disappearsmore » for the higher annealing temperatures. The improvement in PL after the 200 °C anneal is reduced in comparison to that obtained after the 150 °C anneal; this is suggested to arise from a decrease in the non-radiative lifetime caused by the creation of sulfur di-vacancies. Annealing at 250 °C degrades the PL in comparison to the as-grown sample because of the onset of disorder/decomposition of the sample. It is clear that the PL features of the CVD-grown MoS{sub 2} monolayer are profoundly affected by thermal annealing in Ar atmosphere. However, further detailed studies are needed to identify, unambiguously, the role of native defects and/or adsorbed species in defining the radiative channels in annealed samples so that the beneficial effect of improvement in the optical efficiency of the MoS{sub 2} monolayers can be leveraged for various device applications.« less

Linear response theory for annealing of radiation damage in semiconductor devices

NASA Technical Reports Server (NTRS)

Litovchenko, Vitaly

1988-01-01

A theoretical study of the radiation/annealing response of MOS ICs is described. Although many experiments have been performed in this field, no comprehensive theory dealing with radiation/annealing response has been proposed. Many attempts have been made to apply linear response theory, but no theoretical foundation has been presented. The linear response theory outlined here is capable of describing a broad area of radiation/annealing response phenomena in MOS ICs, in particular, both simultaneous irradiation and annealing, as well as short- and long-term annealing, including the case when annealing is nearing completion. For the first time, a simple procedure is devised to determine the response function from experimental radiation/annealing data. In addition, this procedure enables us to study the effect of variable temperature and dose rate, effects which are of interest in spaceflight. In the past, the shift in threshold potential due to radiation/annealing has usually been assumed to depend on one variable: the time lapse between an impulse dose and the time of observation. While such a suggestion of uniformity in time is certainly true for a broad range of radiation annealing phenomena, it may not hold for some ranges of the variables of interest (temperature, dose rate, etc.). A response function is projected which is dependent on two variables: the time of observation and the time of the impulse dose. This dependence on two variables allows us to extend the theory to the treatment of a variable dose rate. Finally, the linear theory is generalized to the case in which the response is nonlinear with impulse dose, but is proportional to some impulse function of dose. A method to determine both the impulse and response functions is presented.

Magnetic studies of CuFe{sub 2}O{sub 4} nanoparticles prepared by co-precipitation method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subha, A.; Shalini, M. Govindaraj; Sahoo, Subasa C., E-mail: subasa@cukerala.ac.in

2016-05-06

Cu-ferrite nanoparticles were synthesized by co-precipitation method and were annealed at different temperatures ranging from 400 to l000°C in air for 4 hours. The as-prepared sample and the sample annealed at 400°C showed small peaks of cubic Cu-ferrite in X-ray diffraction studies. For the intermediate temperature 600°C, some additional peaks of α-Fe{sub 2}O{sub 3} were observed. As the annealing temperature increased further only tetragonal Cu-ferrite peaks were observed. In all the samples some traces of CuO was noted. Grain size was increased from 2lnm for the as prepared sample to 42nm for the sample annealed at l000°C. Spontaneous magnetization valuemore » was found to be very small for the as prepared sample and it was increased monotonically with the increase in annealing temperature. Maximum magnetization of 29.7emu/g was observed at 300K for the sample annealed at l000°C. The remanent magnetization was increased with the increase in annealing temperature up to 900°C and then decreased whereas for the coercivity a peak was observed for the sample annealed at 800°C. The highest coercivity of l402 Oe was observed at 300K for the sample annealed at 800°C. As the measurement temperature decreased from 300K to 60K, magnetization and coercivity values were increased. The observed magnetic behaviour may be understood on the basis of phase transformation, grain growth with the increase in annealing temperature and reduced thermal energy at low measurement temperature.« less

Evolution of mechanical properties of ultrafine grained 1050 alloy annealing with electric current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yiheng; He, Lizi, E-mail: helizi@epm.neu.edu.cn; Zhang, Lin

2016-03-15

The tensile properties and microstructures of 1050 aluminum alloy prepared by equal channel angular pressing at cryogenic temperature (cryoECAP) after electric current annealing at 90–210 °C for 3 h were investigated by tensile test, electron back scattering diffraction (EBSD) and transmission electron microscopy (TEM). An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C, due to a significant decrease in the density of mobile dislocations after annealing, and thus a higher yield stress is required to nucleate alternative dislocation sources during tensile test. The electric current can enhance the motion of dislocations, lead to a lower dislocation density at 90–150 °C,more » and thus shift the peak annealing temperature from 150 °C to 120 °C. Moreover, the electric current can promote the migration of grain boundaries at 150–210 °C, result in a larger grain size at 150 °C and 210 °C, and thus causes a lower yield stress. The sample annealed with electric current has a lower uniform elongation at 90–120 °C, and the deviation in the uniform elongation between samples annealed without and with electric current becomes smaller at 150–210 °C. - Highlights: • An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C. • The d. c. current can enhance the motion of dislocations at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. • The d. c. current can promote the grain growth at 150–210 °C, and thus cause a lower yield stress. • The DC annealed sample has a lower uniform elongation at 90–120 °C.« less

Excitation intensity dependent photoluminescence of annealed two-dimensional MoS2 grown by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kaplan, D.; Mills, K.; Lee, J.; Torrel, S.; Swaminathan, V.

2016-06-01

Here, we present detailed results of Raman and photoluminescence (PL) characterization of monolayers of MoS2 grown by chemical vapor deposition (CVD) on SiO2/Si substrates after thermal annealing at 150 °C, 200 °C, and 250 °C in an argon atmosphere. In comparison to the as-grown monolayers, annealing in the temperature range of 150-250 °C brings about significant changes in the band edge luminescence. It is observed that annealing at 150 °C gives rise to a 100-fold increase in the PL intensity and produces a strong band at 1.852 eV attributed to a free-to-bound transition that dominates over the band edge excitonic luminescence. This band disappears for the higher annealing temperatures. The improvement in PL after the 200 °C anneal is reduced in comparison to that obtained after the 150 °C anneal; this is suggested to arise from a decrease in the non-radiative lifetime caused by the creation of sulfur di-vacancies. Annealing at 250 °C degrades the PL in comparison to the as-grown sample because of the onset of disorder/decomposition of the sample. It is clear that the PL features of the CVD-grown MoS2 monolayer are profoundly affected by thermal annealing in Ar atmosphere. However, further detailed studies are needed to identify, unambiguously, the role of native defects and/or adsorbed species in defining the radiative channels in annealed samples so that the beneficial effect of improvement in the optical efficiency of the MoS2 monolayers can be leveraged for various device applications.

Effect of annealing and In content on the properties of electron beam evaporated ZnO films

NASA Astrophysics Data System (ADS)

Mohamed, S. H.; Ali, H. M.; Mohamed, H. A.; Salem, A. M.

2005-08-01

The effect of both annealing and In content on the properties of ZnO films prepared by electron beam evaporation were investigated. The evaporation was carried out at room temperature from bulk samples prepared by sintering technique. X-ray diffraction showed that the structure of ZnO-In{2}O{3} films depends on both the In content and annealing temperature. Amorphous, highly transparent and relatively low resistive films which can be suitable for the usage as transparent electrode of organic light-emitting diode were obtained upon annealing at 300 circC. Partially crystalline, highly transparent and highly resistive films which can be used in piezoelectric applications were obtained upon annealing at 500 circC. For each composition the refractive index has no monotonic variation upon increasing annealing temperature.

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

NASA Astrophysics Data System (ADS)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators

PubMed Central

2013-01-01

In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely with the annealing temperature. Most importantly, the 3-dB response of the 750°C-annealed lumped-element QD-EAM was found to be 1.6 GHz at zero reverse bias voltage - the lowest reverse bias voltage reported. We believe that this work will be beneficial to researchers working on on-chip integration of QD-EAMs with other devices since energy consumption will be an important consideration. PMID:23388169

Rapid curing of solution-processed zinc oxide films by pulse-light annealing for thin-film transistor applications

NASA Astrophysics Data System (ADS)

Kim, Dong Wook; Park, Jaehoon; Hwang, Jaeeun; Kim, Hong Doo; Ryu, Jin Hwa; Lee, Kang Bok; Baek, Kyu Ha; Do, Lee-Mi; Choi, Jong Sun

2015-01-01

In this study, a pulse-light annealing method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thinfilm transistors (TFTs). Transistors that were fabricated by the pulse-light annealing method, with the annealing being carried out at 90℃ for 15 s, exhibited a mobility of 0.05 cm2/Vs and an on/off current ratio of 106. Such electrical properties are quite close to those of devices that are thermally annealed at 165℃ for 40 min. X-ray photoelectron spectroscopy analysis of ZnO films showed that the activation energy required to form a Zn-O bond is entirely supplied within 15 s of pulse-light exposure. We conclude that the pulse-light annealing method is viable for rapidly curing solution-processable oxide semiconductors for TFT applications.

Annealed importance sampling with constant cooling rate

NASA Astrophysics Data System (ADS)

Giovannelli, Edoardo; Cardini, Gianni; Gellini, Cristina; Pietraperzia, Giangaetano; Chelli, Riccardo

2015-02-01

Annealed importance sampling is a simulation method devised by Neal [Stat. Comput. 11, 125 (2001)] to assign weights to configurations generated by simulated annealing trajectories. In particular, the equilibrium average of a generic physical quantity can be computed by a weighted average exploiting weights and estimates of this quantity associated to the final configurations of the annealed trajectories. Here, we review annealed importance sampling from the perspective of nonequilibrium path-ensemble averages [G. E. Crooks, Phys. Rev. E 61, 2361 (2000)]. The equivalence of Neal's and Crooks' treatments highlights the generality of the method, which goes beyond the mere thermal-based protocols. Furthermore, we show that a temperature schedule based on a constant cooling rate outperforms stepwise cooling schedules and that, for a given elapsed computer time, performances of annealed importance sampling are, in general, improved by increasing the number of intermediate temperatures.

Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing

NASA Astrophysics Data System (ADS)

Park, Hokyung; Choi, Rino; Lee, Byoung Hun; Hwang, Hyunsang

2007-09-01

High pressure deuterium annealing on the hot carrier reliability characteristics of HfSiO metal oxide semiconductor field effect transistor (MOSFET) was investigated. Comparing with the conventional forming gas (H2/Ar=10%/96%, 480 °C, 30 min) annealed sample, MOSFET annealed in 5 atm pure deuterium ambient at 400 °C showed the improvement of linear drain current, reduction of interface trap density, and improvement of the hot carrier reliability characteristics. These improvements can be attributed to the effective passivation of the interface trap site after high pressure annealing and heavy mass effect of deuterium. These results indicate that high pressure pure deuterium annealing can be a promising process for improving device performance as well as hot carrier reliability, together.

[The application of non-annealing thermoluminescent dosimetry (TLD)].

PubMed

Wu, J M; Chen, C S; Lan, R H

1993-06-01

Conventional use of Thermoluminescence (TL) in radiation dosimetry is very time-consuming. It requires repeating the procedures of preheating and annealing. In an attempt to simplify these procedures, we conducted an experiment of non-annealing TL dosimetry. This article reports the experiment's results. We adopted Lithium Fluoride (LiF) chip (TLD-100) in polystyrene under the exposure of Co-60, and the result was taken by HAR-SHAW-4000 TL reading system. The TL response was analyzed, including linearity, reproducibility and fading test. Because non-annealing TL response was greatly influenced by residual electron, TLD calibration curves were separated into two parts: (1) high dose region (HDR, 50-1500 cGy); (2) low dose region (LDR, 0-50 cGy). When TL dosimeters were exposed to a single high does (about 500 cGy), the HDR could be reproduced within 3% and fit a good linearity. For LDR, we had to give up the tail of glow curve in the high temperature region. We could then get good linearity and reproducibility. Furthermore, fading of non-annealing was apparently larger than annealing. We could control the fading of non-annealing was apparently larger than annealing. We could control the fading influence within 1% by taking the TL reading one hour after exposure. On the other hand, a combination of photon and electron exposure was also performed by non-annealing TL dosimetry. The results were compatible with Co-60 exposure in the same system.

The double-edged effects of annealing MgO underlayers on the efficient synthesis of single-wall carbon nanotube forests.

PubMed

Tsuji, Takashi; Hata, Kenji; Futaba, Don N; Sakurai, Shunsuke

2017-11-16

Recently, the millimetre-scale, highly efficient synthesis of single-wall carbon nanotube (SWCNT) forests from Fe catalysts has been reported through the annealing of the magnesia (MgO) underlayer. Here, we report the double-edged effects of underlayer annealing on the efficiency and structure of the SWCNT forest synthesis through a temperature-dependent examination. Our results showed that the efficiency of the SWCNT forests sharply increased with increased underlayer annealing temperatures from 600 °C up to 900 °C due to a temperature-dependent structural modification, characterized by increased grain size and reduced defects, of the MgO underlayer. Beyond this temperature, the SWCNT fraction also decreased as a result of further structural modification of the MgO underlayer. This exemplifies the double-edged effects of annealing. Specifically, for underlayer annealing below 600 °C, the catalyst subsurface diffusion was found to limit the growth efficiency, and for excessively high underlayer annealing temperatures (>900 °C), catalyst coalescence/ripening led to the formation of double-wall carbon nanotubes. As a result, three distinct regions of synthesis were observed: (i) a "low yield" region below a threshold temperature (∼600 °C); (ii) an "increased yield" region from 600 to 900 °C, and (iii) a "saturation" region above 900 °C. The efficient SWCNT forest synthesis could only occur within a specific annealing temperature window as a result of this double-edged effects of underlayer annealing.

Improvement of the Mechanical Properties of 1022 Carbon Steel Coil by Using the Taguchi Method to Optimize Spheroidized Annealing Conditions.

PubMed

Yang, Chih-Cheng; Liu, Chang-Lun

2016-08-12

Cold forging is often applied in the fastener industry. Wires in coil form are used as semi-finished products for the production of billets. This process usually requires preliminarily drawing wire coil in order to reduce the diameter of products. The wire usually has to be annealed to improve its cold formability. The quality of spheroidizing annealed wire affects the forming quality of screws. In the fastener industry, most companies use a subcritical process for spheroidized annealing. Various parameters affect the spheroidized annealing quality of steel wire, such as the spheroidized annealing temperature, prolonged heating time, furnace cooling time and flow rate of nitrogen (protective atmosphere). The effects of the spheroidized annealing parameters affect the quality characteristics of steel wire, such as the tensile strength and hardness. A series of experimental tests on AISI 1022 low carbon steel wire are carried out and the Taguchi method is used to obtain optimum spheroidized annealing conditions to improve the mechanical properties of steel wires for cold forming. The results show that the spheroidized annealing temperature and prolonged heating time have the greatest effect on the mechanical properties of steel wires. A comparison between the results obtained using the optimum spheroidizing conditions and the measures using the original settings shows the new spheroidizing parameter settings effectively improve the performance measures over their value at the original settings. The results presented in this paper could be used as a reference for wire manufacturers.

Electron backscatter and X-ray diffraction studies on the deformation and annealing textures of austenitic stainless steel 310S

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nezakat, Majid, E-mail: majid.nezakat@usask.ca

We studied the texture evolution of thermo-mechanically processed austenitic stainless steel 310S. This alloy was cold rolled up to 90% reduction in thickness and subsequently annealed at 1050 °C. At the early stages of deformation, strain-induced martensite was formed from deformed austenite. By increasing the deformation level, slip mechanism was found to be insufficient to accommodate higher deformation strains. Our results demonstrated that twinning is the dominant deformation mechanism at higher deformation levels. Results also showed that cold rolling in unidirectional and cross rolling modes results in Goss/Brass and Brass dominant textures in deformed samples, respectively. Similar texture components aremore » observed after annealing. Thus, the annealing texture was greatly affected by texture of the deformed parent phase and martensite did not contribute as it showed an athermal reversion during annealing. Results also showed that when the fraction of martensite exceeds a critical point, its grain boundaries impeded the movement of austenite grain boundaries during annealing. As a result, recrystallization incubation time would increase. This caused an incomplete recrystallization of highly deformed samples, which led to a rational drop in the intensity of the texture components. - Highlights: •Thermo-mechanical processing through different cold rolling modes can induce different textures. •Martensite reversion is athermal during annealing. •Higher fraction of deformation-induced martensite can increase the annealing time required for complete recrystallization. •Annealing texture is mainly influenced by the deformation texture of austenite.« less

Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

NASA Astrophysics Data System (ADS)

Mohanty, P.; Kabiraj, D.; Mandal, R. K.; Kulriya, P. K.; Sinha, A. S. K.; Rath, Chandana

2014-04-01

TiO2 thin films deposited by electron beam evaporation technique annealed in either O2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford's backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]).

The effects of different heat treatment annealing on structural properties of LaFe11.5Si1.5 compound

NASA Astrophysics Data System (ADS)

Norizan, Yang Nurhidayah Asnida; Din, Muhammad Faiz Md; Zamri, Wan Fathul Hakim W.; Hashim, Fakroul Ridzuan; Jusoh, Mohd Taufik; Rahman, Mohd Rashid Abdul

2018-02-01

The cubic NaZn13-type LaFe13-xSix based compounds have been studied systematically and has become one of the most interesting systems for exploring large MCE. Its magnetic properties are strongly doping dependent and provides many of advantage compare to other as magnetic materials for magnetic refrigerator application. In other to produce high quality of cubic NaZn13-type structure, the structural properties of LaFe11.5Si1.5 compounds annealed at different temperature have been investigated. The LaFe11.5Si1.5 compounds was prepared by arc melting and annealed at two different heat treatment which are 1323 K for 14 days and 1523 K for 4 hour. The powder X-ray diffraction (XRD) shows that a short time and high temperature annealing process has benefits for the formation of the NaZn13-type phase compared to a long time and low temperature annealing process. This is shown by the weight fraction of cubic NaZn13- type structure increases from 80% for low temperature annealing to 83% for high temperature annealing. At the same time, high temperature annealing increase the main structure and decrease the impurity (α-Fe and LaFeSi). Furthermore, it can be clearly seen in the Rietveld refinement results that the lattice parameter is increase at the high temperature annealing because of more cubic NaZn13 is formed at higher temperature.

Microwave annealing of Mg-implanted and in situ Be-doped GaN

NASA Astrophysics Data System (ADS)

Aluri, Geetha S.; Gowda, Madhu; Mahadik, Nadeemullah A.; Sundaresan, Siddarth G.; Rao, Mulpuri V.; Schreifels, John A.; Freitas, J. A.; Qadri, S. B.; Tian, Y.-L.

2010-10-01

An ultrafast microwave annealing method, different from conventional thermal annealing, is used to activate Mg-implants in GaN layer. The x-ray diffraction measurements indicated complete disappearance of the defect sublattice peak, introduced by the implantation process for single-energy Mg-implantation, when the annealing was performed at ≥1400 °C for 15 s. An increase in the intensity of Mg-acceptor related luminescence peak (at 3.26 eV) in the photoluminescence spectra confirms the Mg-acceptor activation in single-energy Mg-implanted GaN. In case of multiple-energy implantation, the implant generated defects persisted even after 1500 °C/15 s annealing, resulting in no net Mg-acceptor activation of the Mg-implant. The Mg-implant is relatively thermally stable and the sample surface roughness is 6 nm after 1500 °C/15 s annealing, using a 600 nm thick AlN cap. In situ Be-doped GaN films, after 1300 °C/5 s annealing have shown Be out-diffusion into the AlN layer and also in-diffusion toward the GaN/SiC interface. The in-diffusion and out-diffusion of the Be increased with increasing annealing temperature. In fact, after 1500 °C/5 s annealing, only a small fraction of in situ doped Be remained in the GaN layer, revealing the inadequateness of using Be-implantation for forming p-type doped layers in the GaN.

The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4 H-SiC

NASA Astrophysics Data System (ADS)

Omotoso, E.; Auret, F. D.; Igumbor, E.; Tunhuma, S. M.; Danga, H. T.; Ngoepe, P. N. M.; Taleatu, B. A.; Meyer, W. E.

2018-05-01

The effects of isochronal annealing on the electrical, morphological and structural characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current-voltage ( I- V), capacitance-voltage ( C- V), deep-level transient spectroscopy, scanning electron microscope (SEM) and X-ray diffraction measurements were employed to study the thermal effect on the characteristics of the SBDs. Prior to thermal annealing of Schottky contacts, the I- V measurements results confirmed the good rectification behaviour with ideality factor of 1.06, Schottky barrier height of 1.20 eV and series resistance of 7 Ω. The rectification properties after annealing was maintained up to an annealing temperature of 500 °C, but deviated slightly above 500 °C. The uncompensated ionized donor concentration decreased with annealing temperature, which could be attributed to out-diffusion of the 4 H-SiC into the Au/Ni contacts and decrease in bonding due to formation of nickel silicides. We observed the presence of four deep-level defects with energies 0.09, 0.11, 0.16 and 0.65 eV below the conduction band before and after the isochronal annealing up to 600 °C. The conclusion drawn was that annealing did not affect the number of deep-level defects present in Au/Ni/4 H-SiC contacts. The variations in electrical properties of the devices were attributed to the phase transformations and interfacial reactions that occurred after isochronal annealing.

Unidirectional self-assembly of soft templated mesoporous carbons by zone annealing

NASA Astrophysics Data System (ADS)

Xue, Jiachen; Singh, Gurpreet; Qiang, Zhe; Karim, Alamgir; Vogt, Bryan D.

2013-08-01

Surfactant or block copolymer-templated mesoporous films have been extensively explored, but achieving mesostructure coherence and unidirectional orientation over macroscopic dimensions has remained quite challenging for these self-assembled systems. Here, we extend the concepts associated with zone refinement of crystalline materials to soft templated mesoporous carbon films based on the cooperative assembly of commercial non-ionic surfactants (block copolymers) and phenolic resin oligomers (resol) to provide macroscopic alignment of both cubic (FDU-16) and hexagonal (FDU-15) mesostructures. The average orientation of these mesophases is determined from rotation grazing incidence small angle X-ray scattering (GISAXS) measurements. For FDU-15 templated by Pluronic P123, the orientation factor for the zone-annealed film is 0.98 based on the average of the second Legendre polynomial, but this orientation deteriorates significantly during carbonization. Notably, a thermal stabilization step following zone annealing preserves the orientation of the mesostructure during carbonization. The orientation factor for an isotropic cubic structure (FDU-16 templated by Pluronic F127) is only 0.48 (based on the 111 reflection with incident angle 0.15°) for the same zone annealing protocol, but this illustrates the versatility of zone annealing to different mesostructures. Unexpectedly, zone annealing of FDU-15 templated by Pluronic F127 leads to stabilization of the mesostructure through carbonization, whereas this structure collapses fully during carbonization even after extended oven annealing; despite no clear macroscopic orientation of the cylindrical mesostructure from zone annealing. Thermal zone annealing provides a simple methodology to produce highly ordered and macroscopically oriented stable mesoporous carbon films, but the efficacy is strongly tied to the mobility of the template during the zone annealing.Surfactant or block copolymer-templated mesoporous films have been extensively explored, but achieving mesostructure coherence and unidirectional orientation over macroscopic dimensions has remained quite challenging for these self-assembled systems. Here, we extend the concepts associated with zone refinement of crystalline materials to soft templated mesoporous carbon films based on the cooperative assembly of commercial non-ionic surfactants (block copolymers) and phenolic resin oligomers (resol) to provide macroscopic alignment of both cubic (FDU-16) and hexagonal (FDU-15) mesostructures. The average orientation of these mesophases is determined from rotation grazing incidence small angle X-ray scattering (GISAXS) measurements. For FDU-15 templated by Pluronic P123, the orientation factor for the zone-annealed film is 0.98 based on the average of the second Legendre polynomial, but this orientation deteriorates significantly during carbonization. Notably, a thermal stabilization step following zone annealing preserves the orientation of the mesostructure during carbonization. The orientation factor for an isotropic cubic structure (FDU-16 templated by Pluronic F127) is only 0.48 (based on the 111 reflection with incident angle 0.15°) for the same zone annealing protocol, but this illustrates the versatility of zone annealing to different mesostructures. Unexpectedly, zone annealing of FDU-15 templated by Pluronic F127 leads to stabilization of the mesostructure through carbonization, whereas this structure collapses fully during carbonization even after extended oven annealing; despite no clear macroscopic orientation of the cylindrical mesostructure from zone annealing. Thermal zone annealing provides a simple methodology to produce highly ordered and macroscopically oriented stable mesoporous carbon films, but the efficacy is strongly tied to the mobility of the template during the zone annealing. Electronic supplementary information (ESI) available: GISAXS profiles for the FDU-15-F127 at φ = 0° and φ = 90° is included along with 2D GISAXS data for all azimuthal data associated with FDU-15-P123 to illustrate the azimuthal dependence on the diffraction patterns. See DOI: 10.1039/c3nr02821f

The effect of vacuum annealing on corrosion resistance of titanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chikanov, V.N.; Peshkov, V.V.; Kireev, L.S.

1994-09-01

The effect of annealing on the corrosion resistance of OT4-1 sheet titanium in 25% HCl under various air pressures and self-evacuating conditions has been investigated. From the kinetic corrosion curves it follows that the least corrosion resistance of titanium is observed after vacuum annealing. Even low residual air pressure in a chamber improves corrosion resistance. The corrosion resistance of titanium decreases with vacuum-annealing time.

Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

NASA Technical Reports Server (NTRS)

Radhakrishnan, G.; Mccullough, O.; Cser, J.; Katz, J.

1988-01-01

Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.

Effect of continuous annealing temperature on microstructure and properties of ferritic rolled interstitial-free steel

NASA Astrophysics Data System (ADS)

Qiu, Chen-yang; Li, Lang; Hao, Lei-lei; Wang, Jian-gong; Zhou, Xun; Kang, Yong-lin

2018-05-01

In this report, the microstructure, mechanical properties, and textures of warm rolled interstitial-free steel annealed at four different temperatures (730, 760, 790, and 820°C) were studied. The overall structural features of specimens were investigated by optical microscopy, and the textures were measured by X-ray diffraction (XRD). Nano-sized precipitates were then observed by a transmission electron microscope (TEM) on carbon extraction replicas. According to the results, with increased annealing temperatures, the ferrite grains grew; in addition, the sizes of Ti4C2S2 and TiC precipitates also increased. Additionally, the sizes of TiN and TiS precipitates slightly changed. When the annealing temperature increased from 730 to 820°C, the yield strength (YS) and the ultimate tensile strength (UTS) showed a decreasing trend. Meanwhile, elongation and the strain harden exponent (n value) increased to 49.6% and 0.34, respectively. By comparing textures annealed at different temperatures, the intensity of {111} texture annealed at 820°C was the largest, while the difference between the intensity of {111}<110> and {111}<112> was the smallest when the annealing temperature was 820°C. Therefore, the plastic strain ratio (r value) annealed at 820°C was the highest.

Effects of annealing on microstructure, composition and magnetic properties of rolled Fe/Ga-Al composite strip

NASA Astrophysics Data System (ADS)

Zheng, Yanwen; Zhang, Zhihao; Jiang, Yanbin

2018-04-01

The Ga liquid and Al powder were mechanically mixed and poured into a hollow iron plate, after alloying, the composite plate was rolled at room temperature for preparing an Fe/Ga-Al composite strip. The effect of annealing conditions on the diffusion, microstructures and magnetostrictive properties of the strip were studied. The composite plate had good cold rolling formability. After annealing at 750-850 °C for 5 h of the cold-rolled sample with a reduction of 97%, the diffusion distance of Ga and Al in the Fe matrix increased with an increase of the annealing temperature. However, some holes appeared in the center of the sample annealed at a temperature of more than 830 °C, which was detrimental to the subsequent rolling. The combination of the secondary cold rolling and annealing was beneficial to improve the composition homogeneity and magnetic properties of the sample. The magnetostriction coefficient (λ//) of the primary rolled sample was low, ∼4 × 10-6. After annealing and secondary cold rolling, the λ// of the sample increased to 9 × 10-6 and the λ// of the sample conducted by further annealing at 820 °C for 20 h reached 27.5 × 10-6.

Hybrid annealing: Coupling a quantum simulator to a classical computer

NASA Astrophysics Data System (ADS)

Graß, Tobias; Lewenstein, Maciej

2017-05-01

Finding the global minimum in a rugged potential landscape is a computationally hard task, often equivalent to relevant optimization problems. Annealing strategies, either classical or quantum, explore the configuration space by evolving the system under the influence of thermal or quantum fluctuations. The thermal annealing dynamics can rapidly freeze the system into a low-energy configuration, and it can be simulated well on a classical computer, but it easily gets stuck in local minima. Quantum annealing, on the other hand, can be guaranteed to find the true ground state and can be implemented in modern quantum simulators; however, quantum adiabatic schemes become prohibitively slow in the presence of quasidegeneracies. Here, we propose a strategy which combines ideas from simulated annealing and quantum annealing. In such a hybrid algorithm, the outcome of a quantum simulator is processed on a classical device. While the quantum simulator explores the configuration space by repeatedly applying quantum fluctuations and performing projective measurements, the classical computer evaluates each configuration and enforces a lowering of the energy. We have simulated this algorithm for small instances of the random energy model, showing that it potentially outperforms both simulated thermal annealing and adiabatic quantum annealing. It becomes most efficient for problems involving many quasidegenerate ground states.

Accessing Forbidden Glass Regimes through High-Pressure Sub-Tg Annealing

PubMed Central

Svenson, Mouritz N.; Mauro, John C.; Rzoska, Sylwester J.; Bockowski, Michal; Smedskjaer, Morten M.

2017-01-01

Density and hardness of glasses are known to increase upon both compression at the glass transition temperature (Tg) and ambient pressure sub-Tg annealing. However, a serial combination of the two methods does not result in higher density and hardness, since the effect of compression is countered by subsequent annealing and vice versa. In this study, we circumvent this by introducing a novel treatment protocol that enables the preparation of high-density, high-hardness bulk aluminosilicate glasses. This is done by first compressing a sodium-magnesium aluminosilicate glass at 1 GPa at Tg, followed by sub-Tg annealing in-situ at 1 GPa. Through density, hardness, and heat capacity measurements, we demonstrate that the effects of hot compression and sub-Tg annealing can be combined to access a “forbidden glass” regime that is inaccessible through thermal history or pressure history variation alone. We also study the relaxation behavior of the densified samples during subsequent ambient pressure sub-Tg annealing. Density and hardness are found to relax and approach their ambient condition values upon annealing, but the difference in relaxation time of density and hardness, which is usually observed for hot compressed glasses, vanishes for samples previously subjected to high-pressure sub-Tg annealing. This confirms the unique configurational state of these glasses. PMID:28418017

Effects of annealing on the physical properties of therapeutic proteins during freeze drying process.

PubMed

Lim, Jun Yeul; Lim, Dae Gon; Kim, Ki Hyun; Park, Sang-Koo; Jeong, Seong Hoon

2018-02-01

Effects of annealing steps during the freeze drying process on etanercept, model protein, were evaluated using various analytical methods. The annealing was introduced in three different ways depending on time and temperature. Residual water contents of dried cakes varied from 2.91% to 6.39% and decreased when the annealing step was adopted, suggesting that they are directly affected by the freeze drying methods Moreover, the samples were more homogenous when annealing was adopted. Transition temperatures of the excipients (sucrose, mannitol, and glycine) were dependent on the freeze drying steps. Size exclusion chromatography showed that monomer contents were high when annealing was adopted and also they decreased less after thermal storage at 60°C. Dynamic light scattering results exhibited that annealing can be helpful in inhibiting aggregation and that thermal storage of freeze-dried samples preferably induced fragmentation over aggregation. Shift of circular dichroism spectrum and of the contents of etanercept secondary structure was observed with different freeze drying steps and thermal storage conditions. All analytical results suggest that the physicochemical properties of etanercept formulation can differ in response to different freeze drying steps and that annealing is beneficial for maintaining stability of protein and reducing the time of freeze drying process. Copyright © 2017 Elsevier B.V. All rights reserved.

Influence of intermediate annealing on abnormal Goss grain growth in the rolled columnar-grained Fe-Ga-Al alloys

NASA Astrophysics Data System (ADS)

Liu, Yangyang; Li, Jiheng; Gao, Xuexu

2017-08-01

Magnetostrictive Fe82Ga4.5Al13.5 sheets with 0.1 at% NbC were prepared from directional solidified alloys with <0 0 1> preferred orientation. The slabs were hot rolled at 650 °C and warm rolled at 500 °C. Then some warm-rolled sheets were annealed intermediately at 850 °C for 5 min but the others not. After that, all the sheets were cold rolled to a final thickness of ∼0.3 mm. The microstructures, the textures and the distributions of second phase particles in the primary recrystallized samples were investigated. With intermediate annealing, the inhomogeneous microstructure was improved remarkably and strong Goss ({1 1 0}<0 0 1>) and γ-fiber (<1 1 1>//normal direction [ND]) textures were produced in the primary recrystallized samples. But, an evident disadvantage in size and quantity was observed for Goss grains in the primary recrystallized sample without intermediate annealing. After a final annealing, the final textures and magnetostrictions of samples with and without intermediate annealing were characterized. For samples without intermediate annealing, abnormal growth of {1 1 3} grains occurred and deteriorated the magnetostriction. In contrast, abnormal Goss grain growth occurred completely in samples with intermediate annealing and led to saturation magnetostriction as high as 156 ppm.

Microstructure evolution and large magnetocaloric effect of La0.8Ce0.2(Fe0.95Co0.05)11.8Si1.2 alloy prepared by strip-casting and annealing

NASA Astrophysics Data System (ADS)

Zhong, X. C.; Feng, X. L.; Huang, J. H.; Zhang, H.; Huang, Y. L.; Liu, Z. W.; Jiao, D. L.

2018-04-01

The microstructure and magnetocaloric effect of the La0.8Ce0.2(Fe0.95Co0.05)11.8Si1.2 strip-cast flakes annealed between 1273K and 1423K for different time have been investigated. For the flakes annealed for 2h from 1273K to 1423K, the shape and distribution of α-Fe, La-rich and NaZn13-type 1:13 phases are quite sensitive to the annealing temperature. Especially, at a high annealing temperature of 1423K, the 1:13 phase began to decompose into macroscopic α-Fe conglomerations and La-rich dendrites. With the increase of annealing time from 0 to 12h at 1323K, the amount of 1:13 phase increased significantly and reached ˜93.50 wt.% at 12h. However, an overlong annealing time also led to 1:13 phase decomposition and influenced the magnetic performance. For the flakes annealed at 1323K for 12h, large magnetic entropy change value of 18.12Jkg-1K-1 at 5T has been obtained. The present results indicate that strip casting method can potentially be used in mass production of high performance magnetocaloric materials.

Impact of interface manipulation of oxide on electrical transport properties and low-frequency noise in MgO/NiFe/MgO heterojunctions

NASA Astrophysics Data System (ADS)

Li, Jian-wei; Zhao, Chong-jun; Feng, Chun; Zhou, Zhongfu; Yu, Guang-hua

2015-08-01

Low-frequency noise and magnetoresistance in sputtered-deposited Ta(5 nm)/MgO (3 nm)/NiFe(10 nm)/MgO(3 nm)/Ta(3 nm) films have been measured as a function of different annealing times at 400°C. These measurements did not change synchronously with annealing time. A significant increase in magnetoresistance is observed for short annealing times (of the order of minutes) and is correlated with a relatively small reduction in 1/f noise. In contrast, a significant reduction in 1/f noise is observed for long annealing times (of the order of hours) accompanied by a small change in magnetoresistance. After annealing for 2 hours, the 1/f noise decreases by three orders of magnitude. Transmission electron microscopy and slow positron annihilation results implicate the cause being micro-structural changes in the MgO layers and interfaces following different annealing times. The internal vacancies in the MgO layers gather into vacancy clusters to reduce the defect density after short annealing times, whereas the MgO/NiFe and the NiFe/MgO interfaces improve significantly after long annealing times with the amorphous MgO layers gradually crystallizing following the release of interfacial stress.

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

NASA Astrophysics Data System (ADS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

Impact of interface manipulation of oxide on electrical transport properties and low-frequency noise in MgO/NiFe/MgO heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jian-wei; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083; Zhao, Chong-jun

2015-08-15

Low-frequency noise and magnetoresistance in sputtered-deposited Ta(5 nm)/MgO (3 nm)/NiFe(10 nm)/MgO(3 nm)/Ta(3 nm) films have been measured as a function of different annealing times at 400°C. These measurements did not change synchronously with annealing time. A significant increase in magnetoresistance is observed for short annealing times (of the order of minutes) and is correlated with a relatively small reduction in 1/f noise. In contrast, a significant reduction in 1/f noise is observed for long annealing times (of the order of hours) accompanied by a small change in magnetoresistance. After annealing for 2 hours, the 1/f noise decreases by three ordersmore » of magnitude. Transmission electron microscopy and slow positron annihilation results implicate the cause being micro-structural changes in the MgO layers and interfaces following different annealing times. The internal vacancies in the MgO layers gather into vacancy clusters to reduce the defect density after short annealing times, whereas the MgO/NiFe and the NiFe/MgO interfaces improve significantly after long annealing times with the amorphous MgO layers gradually crystallizing following the release of interfacial stress.« less

Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP

NASA Astrophysics Data System (ADS)

Shanthi Latha, K.; Rajagopal Reddy, V.

2017-07-01

The electrical and transport properties of a fabricated bilayer Ru/Cr/ n-InP Schottky diode (SD) have been investigated at different annealing temperatures. Atomic force microscopy results have showed that the overall surface morphology of the Ru/Cr/ n-InP SD is fairly smooth at elevated temperatures. High barrier height is achieved for the diode annealed at 300 °C compared to the as-deposited, annealed at 200 and 400 °C diodes. The series resistance and shunt resistance of the Ru/Cr/ n-InP SD are estimated by current-voltage method at different annealing temperatures. The barrier heights and series resistance are also determined by Cheung's and modified Norde functions. The interface state density of the Ru/Cr/ n-InP SD is found to be decreased after annealing at 300 °C and then slightly increased upon annealing at 400 °C. The difference between barrier heights obtained from current-voltage and capacitance-voltage is also discussed. Experimental results have showed that the Poole-Frenkel emission is found to be dominant in the lower bias region whereas Schottky emission is dominant in the higher bias region for the Ru/Cr/ n-InP SDs irrespective of annealing temperatures.

Annealing kinetics of radiation defects in boron-implanted p-Hg1‑xCdxTe

NASA Astrophysics Data System (ADS)

Talipov, Niyaz; Voitsekhovskii, Alexander

2018-06-01

The results of studying the annealing kinetics of the radiation-induced donor-type defects in boron implanted p-type Hg1‑x Cd x Te (MCT) are presented. The annealing kinetics of the radiation donor centers depend significantly on the dose of B+ ions, that is on the initial level of structural defects generated in the MCT lattice by ion bombardment. The activation energy E A of annealing of donor defects generated by implantation of B+ ions increases with increasing dose and temperature of the post-implantation heat treatment under the SiO2 cap. The smaller the dose and the higher the initial hole concentration in p-MCT, the lower the temperature of a complete annealing of donor centers, which lies in the range 220–275 °C. In the initial stages of the post-implantation heat treatment, primary donor defects are annealed, and then, more stable secondary impurity-defect complexes are annealed. It was established for the first time that the activation energy of the donor defects annealing in bulk crystals and heteroepitaxial structures of MCT has two clearly pronounced regions: at low temperatures 90–130 °C, E A = 0.06 eV and at Т = 150–250 °C, E A = 0.71–0.86 eV.

Air-annealing of Cu(In, Ga)Se2/CdS and performances of CIGS solar cells

NASA Astrophysics Data System (ADS)

Niu, X.; Zhu, H.; Liang, X.; Guo, Y.; Li, Z.; Mai, Y.

2017-12-01

In this study, the annealing treatment on Cu(In, Ga)Se2 (CIGS)/CdS interface in air is systematically investigated under different annealing temperatures from room temperature to 150 °C and different durations. It is found that when CIGS/CdS interface is annealed for a proper duration the corresponding CIGS thin film solar cells show enhanced open circuit voltage (Voc) and fill factor (FF) as well as corresponding conversion efficiency. The capacitance-voltage (C-V) and time-resolved photoluminescence (TR-PL) measurement results indicate that the CIGS thin film solar cells exhibit an increase in net defect density (NCV) and long lifetime for the carriers, respectively, after the annealing treatment of CIGS/CdS at a mediate annealing temperature here. Moreover, the net defect density of annealed solar cells at higher annealing temperatures for a long duration is reduced. All the variations in the solar cell performances, NCV and carrier lifetime would be related to the passivation of Se vacancies and InCu defects, surface (interface) states as well as positive interface discharges and Cu migration etc. A high efficiency CIGS solar cell of 14.4% is achieved. The optimized solar cell of 17.2% with a MgF2 anti-reflective layer has been obtained.

Quenched-in defects in flashlamp-annealed silicon

NASA Technical Reports Server (NTRS)

Borenstein, J. T.; Jones, J. T.; Corbett, J. W.; Oehrlein, G. S.; Kleinhenz, R. L.

1986-01-01

Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.

Rapid Annealing Of Amorphous Hydrogenated Carbon

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Pouch, John J.; Warner, Joseph D.

1989-01-01

Report describes experiments to determine effects of rapid annealing on films of amorphous hydrogenated carbon. Study represents first efforts to provide information for applications of a-C:H films where rapid thermal processing required. Major finding, annealing causes abrupt increase in absorption and concomitant decrease in optical band gap. Most of change occurs during first 20 s, continues during longer annealing times. Extend of change increases with annealing temperature. Researchers hypothesize abrupt initial change caused by loss of hydrogen, while gradual subsequent change due to polymerization of remaining carbon into crystallites or sheets of graphite. Optical band gaps of unannealed specimens on silicon substrates lower than those of specimens on quartz substrates.

The HARP domain dictates the annealing helicase activity of HARP/SMARCAL1.

PubMed

Ghosal, Gargi; Yuan, Jingsong; Chen, Junjie

2011-06-01

Mutations in HepA-related protein (HARP, or SMARCAL1) cause Schimke immunoosseous dysplasia (SIOD). HARP has ATP-dependent annealing helicase activity, which helps to stabilize stalled replication forks and facilitate DNA repair during replication. Here, we show that the conserved tandem HARP (2HP) domain dictates this annealing helicase activity. Furthermore, chimeric proteins generated by fusing the 2HP domain of HARP with the SNF2 domain of BRG1 or HELLS show annealing helicase activity in vitro and, when targeted to replication forks, mimic the functions of HARP in vivo. We propose that the HARP domain endows HARP with this ATP-driven annealing helicase activity.

Effect of Ag doping and annealing on thermoelectric properties of PbTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bala, Manju, E-mail: Manjubala474@gmail.com; Tripathi, T. S.; Avasthi, D. K.

2015-06-24

The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, C.H.; Evans, J.T. Jr.

1998-11-24

A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, Carleton H.; Evans, Jr., Joseph Tate

1998-01-01

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Modeling Effects of Annealing on Coal Char Reactivity to O 2 and CO 2 , Based on Preparation Conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holland, Troy; Bhat, Sham; Marcy, Peter

Oxy-fired coal combustion is a promising potential carbon capture technology. Predictive computational fluid dynamics (CFD) simulations are valuable tools in evaluating and deploying oxyfuel and other carbon capture technologies, either as retrofit technologies or for new construction. However, accurate predictive combustor simulations require physically realistic submodels with low computational requirements. A recent sensitivity analysis of a detailed char conversion model (Char Conversion Kinetics (CCK)) found thermal annealing to be an extremely sensitive submodel. In the present work, further analysis of the previous annealing model revealed significant disagreement with numerous datasets from experiments performed after that annealing model was developed. Themore » annealing model was accordingly extended to reflect experimentally observed reactivity loss, because of the thermal annealing of a variety of coals under diverse char preparation conditions. The model extension was informed by a Bayesian calibration analysis. In addition, since oxyfuel conditions include extraordinarily high levels of CO 2, the development of a first-ever CO 2 reactivity loss model due to annealing is presented.« less

Modeling Effects of Annealing on Coal Char Reactivity to O 2 and CO 2 , Based on Preparation Conditions

DOE PAGES

Holland, Troy; Bhat, Sham; Marcy, Peter; ...

2017-08-25

Oxy-fired coal combustion is a promising potential carbon capture technology. Predictive computational fluid dynamics (CFD) simulations are valuable tools in evaluating and deploying oxyfuel and other carbon capture technologies, either as retrofit technologies or for new construction. However, accurate predictive combustor simulations require physically realistic submodels with low computational requirements. A recent sensitivity analysis of a detailed char conversion model (Char Conversion Kinetics (CCK)) found thermal annealing to be an extremely sensitive submodel. In the present work, further analysis of the previous annealing model revealed significant disagreement with numerous datasets from experiments performed after that annealing model was developed. Themore » annealing model was accordingly extended to reflect experimentally observed reactivity loss, because of the thermal annealing of a variety of coals under diverse char preparation conditions. The model extension was informed by a Bayesian calibration analysis. In addition, since oxyfuel conditions include extraordinarily high levels of CO 2, the development of a first-ever CO 2 reactivity loss model due to annealing is presented.« less

Influence of annealing on X-ray radiation sensing properties of TiO2 thin film

NASA Astrophysics Data System (ADS)

Sarma, M. P.; Kalita, J. M.; Wary, G.

2018-03-01

A recent study shows that the titanium dioxide (TiO2) thin film synthesised by a chemical bath deposition technique is a very useful material for the X-ray radiation sensor. In this work, we reported the influence of annealing on the X-ray radiation detection sensitivity of the TiO2 film. The films were annealed at 333 K, 363 K, 393 K, 473 K, and 573 K for 1 hour. Structural analyses showed that the microstrain and dislocation density decreased whereas the average crystallite size increased with annealing. The band gap of the films also decreased from 3.26 eV to 3.10 eV after annealing. The I-V characteristics record under the dark condition and under the X-ray irradiation showed that the conductivity increased with annealing. The influence of annealing on the detection sensitivity was negligible if the bias voltage applied across the films was low (within 0.2 V‒1.0 V). At higher bias voltage (>1.0 V), the contribution of electrons excited by X-ray became less significant which affected the detection sensitivity.

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

PubMed

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-04-20

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

PubMed

Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

2012-12-01

Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study

PubMed Central

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-01-01

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C. PMID:28773423

Anomalous annealing of floating gate errors due to heavy ion irradiation

NASA Astrophysics Data System (ADS)

Yin, Yanan; Liu, Jie; Sun, Youmei; Hou, Mingdong; Liu, Tianqi; Ye, Bing; Ji, Qinggang; Luo, Jie; Zhao, Peixiong

2018-03-01

Using the heavy ions provided by the Heavy Ion Research Facility in Lanzhou (HIRFL), the annealing of heavy-ion induced floating gate (FG) errors in 34 nm and 25 nm NAND Flash memories has been studied. The single event upset (SEU) cross section of FG and the evolution of the errors after irradiation depending on the ion linear energy transfer (LET) values, data pattern and feature size of the device are presented. Different rates of annealing for different ion LET and different pattern are observed in 34 nm and 25 nm memories. The variation of the percentage of different error patterns in 34 nm and 25 nm memories with annealing time shows that the annealing of FG errors induced by heavy-ion in memories will mainly take place in the cells directly hit under low LET ion exposure and other cells affected by heavy ions when the ion LET is higher. The influence of Multiple Cell Upsets (MCUs) on the annealing of FG errors is analyzed. MCUs with high error multiplicity which account for the majority of the errors can induce a large percentage of annealed errors.

Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

NASA Astrophysics Data System (ADS)

Rajpal, Shashikant; Kumar, S. R.

2018-04-01

Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at ∼328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at ∼328 nm along with appearance of a new peak at ∼437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 °C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.

Enhancing the performance of tungsten doped InZnO thin film transistors via sequential ambient annealing

NASA Astrophysics Data System (ADS)

Park, Hyun-Woo; Song, Aeran; Kwon, Sera; Choi, Dukhyun; Kim, Younghak; Jun, Byung-Hyuk; Kim, Han-Ki; Chung, Kwun-Bum

2018-03-01

This study suggests a sequential ambient annealing process as an excellent post-treatment method to enhance the device performance and stability of W (tungsten) doped InZnO thin film transistors (WIZO-TFTs). Sequential ambient annealing at 250 °C significantly enhanced the device performance and stability of WIZO-TFTs, compared with other post-treatment methods, such as air ambient annealing and vacuum ambient annealing at 250 °C. To understand the enhanced device performance and stability of WIZO-TFT with sequential ambient annealing, we investigate the correlations between device performance and stability and electronic structures, such as band alignment, a feature of the conduction band, and band edge states below the conduction band. The enhanced performance of WIZO-TFTs with sequential ambient annealing is related to the modification of the electronic structure. In addition, the dominant mechanism responsible for the enhanced device performance and stability of WIZO-TFTs is considered to be a change in the shallow-level and deep-level band edge states below the conduction band.

Control of magnetic, nonmagnetic, and superconducting states in annealed Ca(Fe 1–xCo x)₂As₂

DOE PAGES

Ran, S.; Bud'ko, S. L.; Straszheim, W. E.; ...

2012-06-22

We have grown single-crystal samples of Co substituted CaFe₂As₂ using an FeAs flux and systematically studied the effects of annealing/quenching temperature on the physical properties of these samples. Whereas the as-grown samples (quenched from 960°C) all enter the collapsed tetragonal phase upon cooling, annealing/quenching temperatures between 350 and 800°C can be used to tune the system to low-temperature antiferromagnetic/orthorhomic or superconducting states as well. The progression of the transition temperature versus annealing/quenching temperature (T-T anneal) phase diagrams with increasing Co concentration shows that, by substituting Co, the antiferromagnetic/orthorhombic and the collapsed tetragonal phase lines are separated and bulk superconductivity ismore » revealed. We established a 3D phase diagram with Co concentration and annealing/quenching temperature as two independent control parameters. At ambient pressure, for modest x and T anneal values, the Ca(Fe₁₋ xCox)₂As₂ system offers ready access to the salient low-temperature states associated with Fe-based superconductors: antiferromagnetic/orthorhombic, superconducting, and nonmagnetic/collapsed tetragonal.« less

Structure and optical properties of Ge/Si quantum dots formed by driving the evolution of Ge thin films via thermal annealing

NASA Astrophysics Data System (ADS)

Shu, Qijiang; Yang, Jie; Chi, Qingbin; Sun, Tao; Wang, Chong; Yang, Yu

2018-04-01

Ge/Si quantum dots (QDs) are fabricated by driving the transformation of a Ge thin film-deposited using the direct current (DC) magnetron sputtering technique by controlling the subsequent in situ annealing processes. The experimental results indicate that, with the increase in annealing temperature, the volume of Ge QDs increases monotonically, while the QD density initially increases then decreases. The maximal QD density can reach 1.1 × 1011 cm‑2 after a 10 min annealing at 650 °C. The Ge–Ge peak of Ge QDs obtained by Raman spectroscopy initially undergoes a blue shift and then a red shift with increasing annealing temperature. This behavior results from the competition between the dislocation and the strain relaxation in QDs. Concurrently, a series of photoelectric detectors are fabricated to evaluate the photoelectric performance of these annealed Ge QD samples. A high-photoelectricity response is demonstrated in the QD sample annealed at 650 °C. Our results pave a promising way for whole-silicon-material optical-electronic integration based on a simple and practicable fabrication method.

Population annealing simulations of a binary hard-sphere mixture

NASA Astrophysics Data System (ADS)

Callaham, Jared; Machta, Jonathan

2017-06-01

Population annealing is a sequential Monte Carlo scheme well suited to simulating equilibrium states of systems with rough free energy landscapes. Here we use population annealing to study a binary mixture of hard spheres. Population annealing is a parallel version of simulated annealing with an extra resampling step that ensures that a population of replicas of the system represents the equilibrium ensemble at every packing fraction in an annealing schedule. The algorithm and its equilibration properties are described, and results are presented for a glass-forming fluid composed of a 50/50 mixture of hard spheres with diameter ratio of 1.4:1. For this system, we obtain precise results for the equation of state in the glassy regime up to packing fractions φ ≈0.60 and study deviations from the Boublik-Mansoori-Carnahan-Starling-Leland equation of state. For higher packing fractions, the algorithm falls out of equilibrium and a free volume fit predicts jamming at packing fraction φ ≈0.667 . We conclude that population annealing is an effective tool for studying equilibrium glassy fluids and the jamming transition.

Effect of diffusion annealing regimes on the structure of Nb3Sn layers in ITER-type bronze-processed wires

NASA Astrophysics Data System (ADS)

Valova-Zaharevskaya, E. G.; Popova, E. N.; Deryagina, I. L.; Abdyukhanov, I. M.; Tsapleva, A. S.

2018-03-01

The goal of the present study is to characterize the growth kinetics and structural parameters of the Nb3Sn layers formed under various regimes of the diffusion annealing of bronze-processed Nb/Cu-Sn composites. The structure of the superconducting layers is characterized by their thickness, average size of equiaxed grains and by the ratio of fractions of columnar and equiaxed grains. It was found that at higher diffusion annealing temperatures (above 650°C) thicker superconducting layers are obtained, but the average sizes of equiaxed Nb3Sn grains even under short exposures (10 h) are much larger than after the long low-temperature annealing. At the low-temperature (575 °C) annealing the relative fraction of columnar grains increases with increasing annealing time. Based on the data obtained, optimal regimes of the diffusion annealing can be chosen, which would on the one hand ensure complete transformation of Nb into Nb3Sn of close to the stoichiometric composition, and on the other hand prevent the formation of coarse and columnar grains.

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

NASA Astrophysics Data System (ADS)

Suzuki, Akira; Bungi, Yu; Araki, Tsutomu; Nanishi, Yasushi; Mori, Yasuaki; Yamamoto, Hiroaki; Harima, Hiroshi

2009-05-01

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E 2 (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.

Selective molecular annealing: in situ small angle X-ray scattering study of microwave-assisted annealing of block copolymers.

PubMed

Toolan, Daniel T W; Adlington, Kevin; Isakova, Anna; Kalamiotis, Alexis; Mokarian-Tabari, Parvaneh; Dimitrakis, Georgios; Dodds, Christopher; Arnold, Thomas; Terrill, Nick J; Bras, Wim; Hermida Merino, Daniel; Topham, Paul D; Irvine, Derek J; Howse, Jonathan R

2017-08-09

Microwave annealing has emerged as an alternative to traditional thermal annealing approaches for optimising block copolymer self-assembly. A novel sample environment enabling small angle X-ray scattering to be performed in situ during microwave annealing is demonstrated, which has enabled, for the first time, the direct study of the effects of microwave annealing upon the self-assembly behavior of a model, commercial triblock copolymer system [polystyrene-block-poly(ethylene-co-butylene)-block-polystyrene]. Results show that the block copolymer is a poor microwave absorber, resulting in no change in the block copolymer morphology upon application of microwave energy. The block copolymer species may only indirectly interact with the microwave energy when a small molecule microwave-interactive species [diethylene glycol dibenzoate (DEGDB)] is incorporated directly into the polymer matrix. Then significant morphological development is observed at DEGDB loadings ≥6 wt%. Through spatial localisation of the microwave-interactive species, we demonstrate targeted annealing of specific regions of a multi-component system, opening routes for the development of "smart" manufacturing methodologies.

Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN

NASA Astrophysics Data System (ADS)

Azimah, E.; Zainal, N.; Shuhaimi, A.; Hassan, Z.

2015-06-01

Two-step thermal annealing with different ambient gas was proposed to improve the activation of Mg doping in MOCVD-GaN films; (1) with nitrogen at the first step and followed by oxygen (N2/O2) and (2) with O2 and then by N2 (O2/N2). For comparison, two samples annealed in one-step thermal annealing using air and N2, respectively were also prepared. From Hall-effect measurement, the two-step annealing with the use of O2/N2 treatment was found to give the highest hole concentration at to 5.5 × 1017 cm-3. On the other hand, Raman spectroscopy and XRD measurements revealed that the O2/N2 annealed sample exhibited the smallest compressive strain and FWHM (full width at high maximum) compared to others. Hence, the annealing with O2/N2 is proposed to be the most promising technique that not only to increase the hole concentration effectively but also to improve the crystalline quality of the samples.

Understanding the effect of annealing temperature on crystalline structure, morphology, and photocatalytic activity of silver-loaded TiO2 nanotubes

NASA Astrophysics Data System (ADS)

Viet, Pham Van; Phuong Trang, Duong Dao; Phat, Bui Dai; Hieu, Le Van; Thi, Cao Minh

2018-05-01

In this study, we classified the effect of the annealing temperature on silver-loaded TiO2 nanotubes (Ag/TNTs). X-ray diffraction results demonstrate that TNTs have a tendency of phase transformation owing to silver nanoparticles (Ag NPs). The Brunauer-Emmett-Teller method indicates that Ag/TNTs is a mesopore material and the surface area of Ag/TNTs decreases when the annealing temperature increases. This research concluded that the TNT structure begins to break at high annealing temperatures (>400 °C) and is completely broken at 500 °C. The average diameter of the Ag NPs in Ag/TNTs increases linearly with the annealing temperature. In addition, this study clearly explained the oxidation state transformation of Ag in Ag/TNTs under the impact of the annealing temperature, therein, the Ag0 state is transferred completely to Ag+ at 400 °C, and some Ag+ is oxidized to form Ag2+. The Ag/TNTs and Ag/TNTs annealed at 300 °C provided the good methylene blue photodegradation ability for 150 min under sunlight condition.

Rebonding of Se to As and Ge in Ge33As12Se55 films upon thermal annealing: Evidence from x-ray photoelectron spectra investigations

NASA Astrophysics Data System (ADS)

Wang, R. P.; Choi, D. Y.; Rode, A. V.; Madden, S. J.; Luther-Davies, B.

2007-06-01

We have measured and analyzed x-ray photoelectron spectra (XPS) of as-grown and annealed Ge33As12Se55 films compared with bulk material. We found that the as-grown film contains a large number of separated Se clusters which can coalesce with As and Ge after annealing at high temperatures. In addition, both the Ge and As 3d spectra show the presence of oxides. While the Ge oxidation increases with an increasing annealing temperature, As oxidation is almost unaffected by annealing. The difference could be due to their different electro-negativities. Our results suggest that, while thermal annealing is effective to move the film toward the bond structure of bulk glass, the simultaneous surface oxidation must be suppressed in order to achieve high quality films.

Chalcogen (O2, S, Se, Te) atmosphere annealing induced bulk superconductivity in Fe1+yTe1-xSex single crystal

NASA Astrophysics Data System (ADS)

Sun, Y.; Tsuchiya, Y.; Yamada, T.; Taen, T.; Pyon, S.; Shi, Z. X.; Tamegai, T.

2014-09-01

We reported a detailed study of Fe1+yTe0.6Se0.4 single crystals annealed in the atmosphere of chalcogens (O2, S, Se, Te). After annealing with appropriate amount of chalcogens, Fe1+yTe0.6Se0.4 single crystals show Tc higher than 14 K with a sharp transition width ∼1 K. Critical current density Jc for the annealed crystals reach a very high value ∼2-4 × 105 A/cm2 under zero field, and is also robust under applied field at low temperatures. Magneto-optical imaging reveal that the Jc is homogeneously distributed in the annealed crystals and isotropic in the ab-plane. Our results show that annealing in the atmosphere of chalcogens can successfully induce bulk superconductivity in Fe1+yTe0.6Se0.4.

All-dry transferred single- and few-layer MoS2 field effect transistor with enhanced performance by thermal annealing

NASA Astrophysics Data System (ADS)

Islam, Arnob; Lee, Jaesung; Feng, Philip X.-L.

2018-01-01

We report on the experimental demonstration of all-dry stamp transferred single- and few-layer (1L to 3L) molybdenum disulfide (MoS2) field effect transistors (FETs), with a significant enhancement of device performance by employing thermal annealing in moderate vacuum. Three orders of magnitude reduction in both contact and channel resistances have been attained via thermal annealing. We obtain a low contact resistance of 22 kΩ μm after thermal annealing of 1L MoS2 FETs stamp-transferred onto gold (Au) contact electrodes. Furthermore, nearly two orders of magnitude enhancement of field effect mobility are also observed after thermal annealing. Finally, we employ Raman and photoluminescence measurements to reveal the phenomena of alloying or hybridization between 1L MoS2 and its contacting electrodes during annealing, which is responsible for attaining the low contact resistance.

Quantum annealing versus classical machine learning applied to a simplified computational biology problem

PubMed Central

Li, Richard Y.; Di Felice, Rosa; Rohs, Remo; Lidar, Daniel A.

2018-01-01

Transcription factors regulate gene expression, but how these proteins recognize and specifically bind to their DNA targets is still debated. Machine learning models are effective means to reveal interaction mechanisms. Here we studied the ability of a quantum machine learning approach to predict binding specificity. Using simplified datasets of a small number of DNA sequences derived from actual binding affinity experiments, we trained a commercially available quantum annealer to classify and rank transcription factor binding. The results were compared to state-of-the-art classical approaches for the same simplified datasets, including simulated annealing, simulated quantum annealing, multiple linear regression, LASSO, and extreme gradient boosting. Despite technological limitations, we find a slight advantage in classification performance and nearly equal ranking performance using the quantum annealer for these fairly small training data sets. Thus, we propose that quantum annealing might be an effective method to implement machine learning for certain computational biology problems. PMID:29652405

Quantum annealing with all-to-all connected nonlinear oscillators

PubMed Central

Puri, Shruti; Andersen, Christian Kraglund; Grimsmo, Arne L.; Blais, Alexandre

2017-01-01

Quantum annealing aims at solving combinatorial optimization problems mapped to Ising interactions between quantum spins. Here, with the objective of developing a noise-resilient annealer, we propose a paradigm for quantum annealing with a scalable network of two-photon-driven Kerr-nonlinear resonators. Each resonator encodes an Ising spin in a robust degenerate subspace formed by two coherent states of opposite phases. A fully connected optimization problem is mapped to local fields driving the resonators, which are connected with only local four-body interactions. We describe an adiabatic annealing protocol in this system and analyse its performance in the presence of photon loss. Numerical simulations indicate substantial resilience to this noise channel, leading to a high success probability for quantum annealing. Finally, we propose a realistic circuit QED implementation of this promising platform for implementing a large-scale quantum Ising machine. PMID:28593952

Crystal growth and annealing method and apparatus

DOEpatents

Gianoulakis, Steven E.; Sparrow, Robert

2001-01-01

A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF.sub.2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing. An embodiment of the present invention comprises a secondary heater incorporated into a conventional crystal growth and annealing apparatus. The secondary heater supplies heat to minimize the temperature gradients in the crystal during the annealing process. The secondary heater can mount near the bottom of the crucible to effectively maintain appropriate temperature gradients.

The effect of annealing on the MR and exchange bias characteristics in dual spin valve with nano-oxide layer

NASA Astrophysics Data System (ADS)

Jang, S. H.; Kang, T.; Kim, H. J.; Kim, K. Y.

2002-02-01

We investigated magnetoresistance (MR) and exchange bias properties by annealing in the dual spin valve (SV) with nano-oxide layer (NOL). By analyzing effects of NOL in top and bottom pinned simple SVs, MR enhancement effect of NOL inserted in the bottom pinned layer was higher than that of NOL in the top pinned layer with annealing. By the enhanced specular scattering of electrons by NOL, the MR ratio of dual SV with NOL was increased to 15.5-15.9% with an annealing of 200-250°C. Exchange coupling constant Jex was improved rapidly as 0.13-0.16 erg/cm 2 by annealing in the bottom pinned layer, whereas the effect of annealing was not large in the top pinned layer with Jex of about 0.09-0.116 erg/cm 2.

Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing

NASA Astrophysics Data System (ADS)

Dunz, M.; Schmalhorst, J.; Meinert, M.

2018-05-01

We report an exchange bias of more than 2700 Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN > 32nm show an increase of exchange bias for annealing temperatures higher than TA = 400 °C. Maximum exchange bias values exceeding 2000 Oe with reasonably small coercive fields around 600 Oe are achieved for tMnN = 42, 48 nm. The median blocking temperature of those systems is determined to be 180 °C after initial annealing at TA = 525 °C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks.

Annealing results on low-energy proton-irradiated GaAs solar cells

NASA Technical Reports Server (NTRS)

Kachare, R.; Anspaugh, B. E.; O'Meara, L.

1988-01-01

AlGaAs/GaAs solar cells with an approximately 0.5-micron-thick Al(0.85)Ga(0.15)As window layer were irradiated using normal and isotropic incident protons having energies between 50 and 500 keV with fluence up to 1 x 10 to the 12th protons/sq cm. The irradiated cells were annealed at temperatures between 150 and 300 C in nitrogen ambient. The annealing results reveal that significant recovery in spectral response at longer wavelengths occurred. However, the short-wavelength spectral response showed negligible annealing, irrespective of the irradiation energy and annealing conditions. This indicates that the damage produced near the AlGaAs/GaAs interface and the space-charge region anneals differently than damage produced in the bulk. This is explained by using a model in which the as-grown dislocations interact with irradiation-induced point defects to produce thermally stable defects.

Rietveld analysis of the effect of annealing atmosphere on phase evolution of nanocrystalline TiO2 powders.

PubMed

Salari, M; Rezaee, M; Chidembo, A T; Konstantinov, K; Liu, H K

2012-06-01

The structural evolution of nanocrystalline TiO2 was studied by X-ray diffraction (XRD) and the Rietveld refinement method (RRM). TiO2 powders were prepared by the sol-gel technique. Post annealing of as-synthesized powders in the temperature range from 500 degrees C to 800 degrees C under air and argon atmospheres led to the formation of TiO2 nanoparticles with mean crystallite size in the range of 37-165 nm, based on the Rietveld refinement results. It was found that the phase structure, composition, and crystallite size of the resulting particles were dependent on not only the annealing temperature, but also the annealing atmosphere. Rietveld refinement of the XRD data showed that annealing the powders under argon atmosphere promoted the polymorphic phase transformation from anatase to rutile. Field emission scanning electron microscopy (FESEM) was employed to investigate the morphology and size of the annealed powders.

Rapid, cool sintering of wet processed yttria-stabilized zirconia ceramic electrolyte thin films.

PubMed

Park, Jun-Sik; Kim, Dug-Joong; Chung, Wan-Ho; Lim, Yonghyun; Kim, Hak-Sung; Kim, Young-Beom

2017-09-29

Here we report a photonic annealing process for yttria-stabilized zirconia films, which are one of the most well-known solid-state electrolytes for solid oxide fuel cells (SOFCs). Precursor films were coated using a wet-chemical method with a simple metal-organic precursor solution and directly annealed at standard pressure and temperature by two cycles of xenon flash lamp irradiation. The residual organics were almost completely decomposed in the first pre-annealing step, and the fluorite crystalline phases and good ionic conductivity were developed during the second annealing step. These films showed properties comparable to those of thermally annealed films. This process is much faster than conventional annealing processes (e.g. halogen furnaces); a few seconds compared to tens of hours, respectively. The significance of this work includes the treatment of solid-state electrolyte oxides for SOFCs and the demonstration of the feasibility of other oxide components for solid-state energy devices.

Annealing effects on the structural and magnetic properties of off-stoichiometric Fe-Mn-Ga ferromagnetic shape memory alloys

DOE PAGES

Chen, Yan; Bei, Hongbin; Dela Cruz, Clarina R; ...

2016-05-07

Annealing plays an important role in modifying structures and properties of ferromagnetic shape memory alloys (FSMAs). The annealing effect on the structures and magnetic properties of off-stoichiometric Fe 45Mn 26Ga 29 FSMA has been investigated at different elevated temperatures. Rietveld refinements of neutron diffraction patterns display that the formation of the γ phase in Fe 45Mn 26Ga 29 annealed at 1073 K increases the martensitic transformation temperature and reduces the thermal hysteresis in comparison to the homogenized sample. The phase segregation of a Fe-rich cubic phase and a Ga-rich cubic phase occurs at the annealing temperature of 773 K. Themore » atomic occupancies of the alloys are determined thanks to the neutron's capability of differentiating transition metals. The annealing effects at different temperatures introduce a different magnetic characteristic that is associated with distinctive structural changes in the crystal.« less

Athermal Annealing of Silicon

NASA Astrophysics Data System (ADS)

Fischer, R. P.; Grun, J.; Ting, A.; Felix, C.; Peckerar, M.; Fatemi, M.; Manka, C. K.

1999-11-01

Current semiconductor annealing methods are based on thermal processes which are accompanied by diffusion that degrades the definition of device features or causes other problems. This will be a serious obstacle for the production of next-generation ultra-high density, low power semiconductor devices. Experiments underway at NRL utilize a new annealing method which is much faster than thermal annealing and does not depend upon thermal energy (J. Grun, et al)., Phys. Rev. Letters 78, 1584 (1997).. A 10 J, 30 nsec, 1.053 nm wavelength laser pulse is focussed to approximately 1 mm diameter on a silicon sample. Acoustic and shock waves propagate from the impact region, which deposit mechanical energy into the material and anneal the silicon. Experimental results will be presented on annealing neutron-transmutation-doped (NTD) and ion implanted silicon samples with impurity concentrations from 1 × 10^15-3 × 10^20/cm^3.

Stochastic Simulation of Actin Dynamics Reveals the Role of Annealing and Fragmentation

PubMed Central

Fass, Joseph; Pak, Chi; Bamburg, James; Mogilner, Alex

2008-01-01

Recent observations of F-actin dynamics call for theoretical models to interpret and understand the quantitative data. A number of existing models rely on simplifications and do not take into account F-actin fragmentation and annealing. We use Gillespie’s algorithm for stochastic simulations of the F-actin dynamics including fragmentation and annealing. The simulations vividly illustrate that fragmentation and annealing have little influence on the shape of the polymerization curve and on nucleotide profiles within filaments but drastically affect the F-actin length distribution, making it exponential. We find that recent surprising measurements of high length diffusivity at the critical concentration cannot be explained by fragmentation and annealing events unless both fragmentation rates and frequency of undetected fragmentation and annealing events are greater than previously thought. The simulations compare well with experimentally measured actin polymerization data and lend additional support to a number of existing theoretical models. PMID:18279896

Annealing effect of the InAs dot-in-well structure grown by MBE

NASA Astrophysics Data System (ADS)

Zhao, Xuyi; Wang, Peng; Cao, Chunfang; Yan, Jinyi; Zha, Fangxing; Wang, Hailong; Gong, Qian

2017-12-01

We have demonstrated that in situ annealing effect has to be taken into account in order to realize the 1.31 μm InAs quantum dot (QD) lasers with the dot-in-well (DWELL) structure. The photoluminescence (PL) properties have been investigated for the InAs DWELL samples annealed at different temperatures in situ, simulating the annealing process during the growth of the top cladding AlGaAs layer in the laser structure. The QDs with large size in the DWELL structure are vulnerable to the annealing process at temperatures above 550 °C, revealed by the drastic change in the PL spectra. However, the DWELL structure is stable during the annealing process at 540 °C for three hours. The thermal stability of the QDs in the DWELL structure has to be considered in the growth of QD lasers for long wavelength operation.

Synthesis and characterization of nickel oxide particulate annealed at different temperatures

NASA Astrophysics Data System (ADS)

Sharma, Khem Raj; Thakur, Shilpa; Negi, N. S.

2018-04-01

Nickel oxide has been synthesized by solution combustion technique. The nickel oxide ceramic was annealed at 600°C and 1000°C for 2 hours. Structural, electrical, dielectric and magnetic properties were analyzed which are strongly dependent upon the synthesis method. Structural properties were examined by X-ray diffractometer (XRD), which confirmed the purity and cubic phase of nickel oxide. XRD data reveals the increase in crystallite size and decrease in full width half maximum (FWHM) as the annealing temperature increases. Electrical conductivity is found to increase from 10-6 to 10-5 (Ω-1cm-1) after annealing. Dielectric constant is observed to increase from 26 to 175 when the annealing temperature is increased from 600°C to 1000°C. Low value of coercive field is found which shows weak ferromagnetic behavior of NiO. It is observed that all the properties of NiO particulate improve with increasing annealing temperature.

Observation of shift in band gap with annealing in hydrothermally synthesized TiO2-thin films

NASA Astrophysics Data System (ADS)

Pawar, Vani; Jha, Pardeep K.; Singh, Prabhakar

2018-05-01

Anatase TiO2 thin films were synthesized by hydrothermal method. The films were fabricated on a glass substrate by spin coating unit and annealed at 500 °C for 2 hours in ambient atmosphere. The effect of annealing on microstructure and optical properties of TiO2 thin films namely, just deposited and annealed thin film were investigated. The XRD data confirms the tetragonal crystalline structure of the films with space group I41/amd. The surface morphology suggests that TiO2 particles are almost homogeneous in size and annealing of the film affect the grain growth of the particles. The band gap energy increases from 2.81 to 3.34 eV. On the basis of our observation, it can be concluded that the annealing of TiO2 thin films enhances the absorption range and it may find potential application in the field of solar cells.

Evolution of microstructure and surface topography of gold thin films under thermal annealing

NASA Astrophysics Data System (ADS)

Dash, P.; Rath, H.; Dash, B. N.; Mallick, P.; Basu, T.; Som, T.; Singh, U. P.; Mishra, N. C.

2012-07-01

In the present study, we probe into evolution of microstructure and surface morphology of gold thin films of 10 to 50 nm thickness deposited on Si (100) substrate by thermal evaporation method. These films were annealed at 250°C under vacuum. The as-deposited and annealed films were characterized by glancing angle X-Ray diffraction (GAXRD) and atomic force microscopy (AFM), techniques. XRD indicated improvement of crystallinity up to 2 hours of annealing and degradation of the same thereafter. In agreement with XRD result, the grain size distribution histogram obtained from AFM indicated grain growth with annealing time up to 2 hours and saturation or decrease of grain size thereafter. The observed result is explained by the occurrence of two competing phenomena like roughening induced grain growth and smoothening induced inhibition of grain growth with increasing annealing time.

Effect of Annealing Treatment on Mechanical Properties of Nanocrystalline α-iron: an Atomistic Study

PubMed Central

Tong, Xuhang; Zhang, Hao; Li, D. Y.

2015-01-01

Claims are often found in the literature that metallic materials can be nanocrystallized by severe plastic deformation (SPD). However, SPD does not generate a well-defined nanocrystalline (NC) material, which can be achieved by subsequent annealing/recovery treatment. In this study, molecular dynamics (MD) simulation is employed to study the effect of annealing on structure and mechanical properties of cyclic deformed NC α-iron, which simulates SPD-processed α-iron. It is demonstrated that grain boundaries in the deformed NC α-iron evolve to a more equilibrium state during annealing, eliminating or minimizing the residual stress. The annealing treatment increases the system's strength by reducing dislocation emission sources, and improves material ductility through strengthening grain boundaries' resistance to intergranular cracks. The results indicate that the annealing treatment is an essential process for obtaining a well-defined NC structure with superior mechanical properties. PMID:25675978

Fuel additives and heat treatment effects on nanocrystalline zinc ferrite phase composition

NASA Astrophysics Data System (ADS)

Hu, Ping; Pan, De-an; Wang, Xin-feng; Tian, Jian-jun; Wang, Jian; Zhang, Shen-gen; Volinsky, Alex A.

2011-03-01

Nanocrystalline ZnFe 2O 4 powder was prepared by the auto-combustion method using citric acid, acetic acid, carbamide and acrylic acid as fuel additives. Pure spinel zinc ferrite with the crystallite size of about 15 nm can be obtained by using acrylic acid as fuel additive. Samples prepared using other fuel additives contain ZnO impurities. In order to eliminate ZnO impurities, the sample prepared with citric acid as fuel additive was annealed at different temperatures up to 1000 °C in air and in argon. Annealed powders have pure ZnFe 2O 4 phase when annealing temperature is higher than 650 °C in air. Sample annealed at 650 °C in air is paramagnetic. However, annealed powders become a mixture of Fe 3O 4 and FeO after annealing at 1000 °C in argon atmosphere due to Zn volatility and the reduction reaction.

Post deposition annealing effect on the properties of Al2O3/InP interface

NASA Astrophysics Data System (ADS)

Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

2018-02-01

Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

Influence of low-temperature annealing time on the evolution of the structure and mechanical properties of a titanium Ti-Al-V alloy in the submicrocrystalline state

NASA Astrophysics Data System (ADS)

Ratochka, I. V.; Lykova, O. N.; Naidenkin, E. V.

2015-03-01

The effect of annealing at 673 K for 6-24 h on the structural and phase state and mechanical properties of the titanium alloy of a Ti-Al-V system that was previously subjected to severe plastic deformation by uniform compression deformation, has been studied. It has been established that these annealings lead to a nonmontonic dependence of the mechanical properties of the alloy on the annealing time. It has been shown that the annealing of the Ti-Al-V alloy in a submicrocrystalline state is accompanied by simultaneous hardening processes, i.e., the formation of fine particles during phase transformations and the formation of new nanosized grains, and softening processes, i.e., recovery processes and the growth grains to micron sizes. The prevalence of a given process during annealing determines the deterioration or improvement of the alloy's mechanical properties.

Novel thermal annealing methodology for permanent tuning polymer optical fiber Bragg gratings to longer wavelengths.

PubMed

Pospori, A; Marques, C A F; Sagias, G; Lamela-Rivera, H; Webb, D J

2018-01-22

The Bragg wavelength of a polymer optical fiber Bragg grating can be permanently shifted by utilizing the thermal annealing method. In all the reported fiber annealing cases, the authors were able to tune the Bragg wavelength only to shorter wavelengths, since the polymer fiber shrinks in length during the annealing process. This article demonstrates a novel thermal annealing methodology for permanently tuning polymer optical fiber Bragg gratings to any desirable spectral position, including longer wavelengths. Stretching the polymer optical fiber during the annealing process, the period of Bragg grating, which is directly related with the Bragg wavelength, can become permanently longer. The methodology presented in this article can be used to multiplex polymer optical fiber Bragg gratings at any desirable spectral position utilizing only one phase-mask for their photo-inscription, reducing thus their fabrication cost in an industrial setting.

Thermal annealing of lattice-matched InGaAs/InAlAs Quantum-Cascade Lasers

NASA Astrophysics Data System (ADS)

Mathonnière, Sylvain; Semtsiv, M. P.; Ted Masselink, W.

2017-11-01

We describe the evolution of optical power, threshold current, and emission wavelength of a lattice-matched InGaAs/InAlAs Quantum-Cascade Laser (QCL) emitting at 13 μm grown by gas-source molecular-beam epitaxy under thermal annealing. Pieces from the same 2-in wafer were annealed at 600 °C, 650 °C, or 700 °C for 1 h; one control piece remained unannealed. No change in threshold current and emission wavelength was observed. The slope efficiency and maximum emission power increase for the 600 °C anneal, but higher annealing temperatures resulted in degraded performance. This result stands in contrast with the observation that strain-compensated structures cannot withstand annealing temperature of 600 °C. Useful information for post-growth processing steps and the role of interface roughness in QCL performance are obtained.

Effects of annealing on the structure and magnetic properties of Fe80B20 magnetostrictive fibers.

PubMed

Zhu, Qianke; Zhang, Shuling; Geng, Guihong; Li, Qiushu; Zhang, Kewei; Zhang, Lin

2016-07-04

Fe80B20 amorphous alloys exhibit excellent soft magnetic properties, high abrasive resistance and outstanding corrosion resistance. In this work, Fe80B20 amorphous micro-fibers with HC of 3.33 Oe were firstly fabricated and the effects of annealing temperature on the structure and magnetic properties of the fibers were investigated. In this study, Fe80B20 amorphous fibers were prepared by the single roller melt-spinning method. The structures of as-spun and annealed fibers were investigated by X-ray diffractometer (XRD) (PANalytical X,Pert Power) using Cu Kα radiation. The morphology of the fibers was observed by scanning electron microscopy (SEM) (HITACHI-S4800). Differential scanning calorimetry (DSC) measurements of the fibers were performed on Mettler Toledo TGA/DSC1 device under N2 protection. Vibrating sample magnetometer (VSM, Versalab) was used to examine the magnetic properties of the fibers. The resonance behavior of the fibers was characterized by an impedance analyzer (Agilent 4294A) with a home-made copper coil. The X-ray diffusion (XRD) patterns show that the fibers remain amorphous structure until the annealing temperature reaches 500°C. The differential scanning calorimetry (DSC) results show that the crystallization temperature of the fibers is 449°C. The crystallization activation energy is calculated to be 221 kJ/mol using Kissinger formula. The scanning electron microscopy (SEM) images show that a few dendrites appear at the fiber surface after annealing. The result indicates that the coercivity HC (//) and HC (⊥) slightly increases with increasing annealing temperature until 400°C, and then dramatically increases with further increasing annealing temperature which is due to significant increase in magneto-crystalline anisotropy and magneto-elastic anisotropy. The Q value firstly increases slightly when the annealing temperature rises from room temperature (RT) to 300°C, then decreases until 400°C. Eventually, the value of Q increases to ~2000 at annealing temperature of 500°C. In this study, Fe80B20 amorphous fibers with the diameter of 60 μm were prepared by the single roller melt-spinning method and annealed at 200°C, 300°C, 400°C, and 500°C, respectively. XRD results indicate that the fiber structure remains amorphous when the annealing temperature is below 400°C. α-Fe phase and Fe3B phase appear when the annealing temperature rises to 500°C, which is above the crystallization temperature of 449°C. The recrystallization activation energy is calculated to be 221 kJ/mol. The coercivity increases with increasing annealing temperature, which attributes to the increase of total anisotropy. All the as-spun and annealed fibers exhibit good resonance behavior for magnetostrictive sensors.

The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.

PubMed

Park, Soyeon; Bang, Seokhwan; Lee, Seungjun; Park, Joohyun; Ko, Youngbin; Jeon, Hyeongtag

2011-07-01

In this study, the effects of different annealing conditions (air, O2, N2, vacuum) on the chemical and electrical characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFT) were investigated. The contact resistance and interface properties between the IGZO film and the gate dielectric improved after an annealing treatment. However, the chemical bonds in the IGZO bulk changed under various annealing atmospheres, which, in turn, altered the characteristics of the TFTs. The TFTs annealed in vacuum and N2 ambients exhibited undesired switching properties due to the high carrier concentration (>10(17) cm(-3)) of the IGZO active layer. In contrast, the IGZO TFTs annealed in air and oxygen ambients displayed clear transfer characteristics due to an adequately adjusted carrier concentration in the operating range of the TFT. Such an optimal carrier concentration arose through the stabilization of unstable chemical bonds in the IGZO film. With regard to device performance, the TFTs annealed in O2 and air exhibited saturation mobility values of 8.29 and 7.54 cm2/Vs, on-off ratios of 7.34 x 10(8) and 3.95 x 10(8), and subthreshold swing (SS) values of 0.23 and 0.19 V/decade, respectively. Therefore, proper annealing ambients contributed to internal modifications in the IGZO structure and led to an enhancement in the oxidation state of the metal. As a result, defects such as oxygen vacancies were eliminated. Oxygen annealing is thus effective for controlling the carrier concentration of the active layer, decreasing electron traps, and enhancing TFT performance.

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Machida, Emi; Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472; Horita, Masahiro

2012-12-17

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

Control of optical properties of YAG crystals by thermal annealing

NASA Astrophysics Data System (ADS)

Tkachenko, S.; Arhipov, P.; Gerasymov, I.; Kurtsev, D.; Vasyukov, S.; Nesterkina, V.; Shiran, N.; Mateichenko, P.; Sidletskiy, O.

2018-02-01

Optical properties of YAG crystals grown and annealed under different atmosphere conditions have been compared. Simultaneously we have registered the surface composition of crystals and content of basic admixtures in the crystals grown under the reducing conditions. Unlike YAG grown under weakly oxidizing conditions in Ir crucibles and bleached under oxidizing annealing, YAGMo crystals grown in Mo crucibles under reducing Ar + CO atmosphere can be bleached by both oxidizing and reducing thermal annealing. The bleaching of YAGMo is not reversed by further annealing under any available conditions. Mechanisms of this phenomenon have been discussed, including a possible role of admixtures in elimination of color centers in YAG grown under the reducing conditions.

Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

PubMed

Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

2015-03-01

In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

Activation of acceptor levels in Mn implanted Si by pulsed laser annealing

NASA Astrophysics Data System (ADS)

Li, Lin; Bürger, Danilo; Shalimov, Artem; Kovacs, Gy J.; Schmidt, Heidemarie; Zhou, Shengqiang

2018-04-01

In this paper, we report the magnetic and electrical properties of Mn implanted nearly intrinsic Si wafers after subsecond thermal treatment. Activation of acceptors is realized in pulsed laser annealing (PLA) films with a free hole concentration of 6.29  ×  1020 cm‑3 while the sample annealed by rapid thermal annealing (RTA) shows n-type conductivity with a much smaller free electron concentration in the order of 1015 cm‑3. Ferromagnetism is probed for all films by a SQUID magnetometer at low temperatures. The formation of ferromagnetic MnSi1.7 nanoparticles which was proven in RTA films can be excluded in Mn implanted Si annealed by PLA.

Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Sleptsov, E. V.; Chernykh, A. V.; Chernykh, S. V.; Dorofeev, A. A.; Gladysheva, N. B.; Kondakov, M. N.; Sleptsova, A. A.; Panichkin, A. V.; Konovalov, M. P.; Didenko, S. I.

2017-03-01

Investigation of the thermal annealing effect on Schottky barrier parameters and the leakage current of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures has been performed. Improvement of Schottky barrier parameters after annealing of the investigated metallization schemes was observed. Ni/Au and Mo/Au contacts drastically degrade after annealing at the temperatures higher than 400 °C, whereas the Ni/Mo/Au contact exhibits excellent parameters after 500 °C annealing (qϕb = 1.00 eV, n = 1.13 и Ileak = 5 μA).

Performance of quantum annealing on random Ising problems implemented using the D-Wave Two

NASA Astrophysics Data System (ADS)

Wang, Zhihui; Job, Joshua; Rønnow, Troels F.; Troyer, Matthias; Lidar, Daniel A.; USC Collaboration; ETH Collaboration

2014-03-01

Detecting a possible speedup of quantum annealing compared to classical algorithms is a pressing task in experimental adiabatic quantum computing. In this talk, we discuss the performance of the D-Wave Two quantum annealing device on Ising spin glass problems. The expected time to solution for the device to solve random instances with up to 503 spins and with specified coupling ranges is evaluated while carefully addressing the issue of statistical errors. We perform a systematic comparison of the expected time to solution between the D-Wave Two and classical stochastic solvers, specifically simulated annealing, and simulated quantum annealing based on quantum Monte Carlo, and discuss the question of speedup.

Coherent Coupled Qubits for Quantum Annealing

NASA Astrophysics Data System (ADS)

Weber, Steven J.; Samach, Gabriel O.; Hover, David; Gustavsson, Simon; Kim, David K.; Melville, Alexander; Rosenberg, Danna; Sears, Adam P.; Yan, Fei; Yoder, Jonilyn L.; Oliver, William D.; Kerman, Andrew J.

2017-07-01

Quantum annealing is an optimization technique which potentially leverages quantum tunneling to enhance computational performance. Existing quantum annealers use superconducting flux qubits with short coherence times limited primarily by the use of large persistent currents Ip. Here, we examine an alternative approach using qubits with smaller Ip and longer coherence times. We demonstrate tunable coupling, a basic building block for quantum annealing, between two flux qubits with small (approximately 50-nA) persistent currents. Furthermore, we characterize qubit coherence as a function of coupler setting and investigate the effect of flux noise in the coupler loop on qubit coherence. Our results provide insight into the available design space for next-generation quantum annealers with improved coherence.

Impact of annealing on physical properties of e-beam evaporated polycrystalline CdO thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Purohit, Anuradha; Chander, S.; Dhaka, M. S.

2017-04-01

An impact of annealing on the physical properties of polycrystalline CdO thin films is carried out in this study. CdO thin films of thickness 650 nm were fabricated on glass and indium tin oxide (ITO) substrates employing e-beam evaporation technique. The pristine thin films were annealed in air atmosphere at 250 °C, 400 °C and 550 °C for one hour followed by investigation of structural, optical, electrical and morphological properties along with elemental composition using X-ray diffraction (XRD), UV-Vis spectrophotometer, Fourier transform infrared (FTIR) spectrometer, source meter, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS), respectively. XRD patterns confirmed the polycrystalline nature and cubic structure (with space group Fm 3 bar m) of the films. The crystallographic parameters are calculated and found to be influenced by the post-air annealing treatment. The optical study shows that direct band gap is ranging from 1.98 eV to 2.18 eV and found to be decreased with post-annealing. The refractive index and optical conductivity are also increased with annealing temperature. The current-voltage characteristics show ohmic behaviour of the annealed films. The surface morphology is observed to be improved with annealing and grain-size is increased as well as EDS spectrum confirmed the presence of cadmium (Cd) and oxygen (O) in the deposited films.

Microstructural evolution during thermal annealing of ice-Ih

NASA Astrophysics Data System (ADS)

Hidas, Károly; Tommasi, Andréa; Mainprice, David; Chauve, Thomas; Barou, Fabrice; Montagnat, Maurine

2017-06-01

We studied the evolution of the microstructure of ice-Ih during static recrystallization by stepwise annealing experiments. We alternated thermal annealing and electron backscatter diffraction (EBSD) analyses on polycrystalline columnar ice pre-deformed in uniaxial compression at temperature of -7 °C to macroscopic strains of 3.0-5.2. Annealing experiments were carried out at -5 °C and -2 °C up to a maximum of 3.25 days, typically in 5-6 steps. EBSD crystal orientation maps obtained after each annealing step permit the description of microstructural changes. Decrease in average intragranular misorientation at the sample scale and modification of the misorientation across subgrain boundaries provide evidence for recovery from the earliest stages of annealing. This initial evolution is similar for all studied samples irrespective of their initial strain or annealing temperature. After an incubation period ≥1.5 h, recovery is accompanied by recrystallization (nucleation and grain boundary migration). Grain growth proceeds at the expense of domains with high intragranular misorientations, consuming first the most misorientated parts of primary grains. Grain growth kinetics fits the parabolic growth law with grain growth exponents in the range of 2.4-4.0. Deformation-induced tilt boundaries and kink bands may slow down grain boundary migration. They are stable features during early stages of static recrystallization, only erased by normal growth, which starts after >24 h of annealing.

Influence of annealing temperature on the structural, optical and electrical properties of amorphous Zinc Sulfide thin films

NASA Astrophysics Data System (ADS)

Göde, F.; Güneri, E.; Kariper, A.; Ulutaş, C.; Kirmizigül, F.; Gümüş, C.

2011-11-01

Zinc sulfide films have been deposited on glass substrates at room temperature by the chemical bath deposition technique. The growth mechanism is studied using X-ray diffraction, scanning electron microscopy, optical absorption spectra and electrical measurements. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (100, 200, 300 400 and 500 °C) for 1 h. The annealed film was also characterized by structural, optical and electrical studies. The structural analyses revealed that the as-deposited film was amorphous, but after being annealed at 500 °C, it changed to polycrystalline. The optical band gap is direct with a value of 4.01 eV, but this value decreased to 3.74 eV with annealing temperature, except for the 500 °C anneal where it only decreased to 3.82 eV. The refractive index (n), extinction coefficient (k), and real (ɛ1) and imaginary (ɛ2) parts of the dielectric constant are evaluated. Raman peaks appearing at ~478 cm-1, ~546 cm-1, ~778 cm-1 and ~1082 cm-1 for the annealed film (500 °C) were attributed to [TOl+LAΣ, 2TOΓ, 2LO, 3LO phonons of ZnS. The electrical conductivities of both as-deposited and annealed films have been calculated to be of the order of ~10-10 (Ω cm)-1 .

Effect of annealing temperature on the photoluminescence and scintillation properties of ZnO nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurudirek, Sinem V.; Menkara, H.; Klein, Benjamin D. B.

2018-01-01

The effect of the annealing to enhance the photoluminescence (PL) and scintillation properties, as determined by pulse height distribution of alpha particle irradiation, has been investigated for solution grown ZnO nanorods For this investigation the ZnO nanorod arrays were grown on glass for 22 h at 95 ◦ C as a substrate using a solution based hydrothermal technique. The samples were first annealed for different times (30, 60, 90 and 120 min) at 300 ◦ C and then at different temperatures (100 ◦ C–600 ◦ C) in order to determine the optimum annealing time and temperature, respectively. Before annealing, themore » ZnO nanorod arrays showed a broad yellow–orange visible and near-band gap UV emission peaks. After annealing in a forming gas atmosphere, the intensity of the sub-band gap PL was significantly reduced and the near-band gap PL emission intensity correspondingly increased (especially at temperatures higher than 100 ◦ C). Based on the ratio of the peak intensity ratio before and after annealing, it was concluded that samples at 350 ◦ C for 90 min resulted in the best near-band gap PL emission. Similarly, the analysis of the pulse height spectrum resulting from alpha particles revealed that ZnO nanorod arrays similarly annealed at 350 ◦ C for 90 min exhibited the highest scintillation response.« less

Study of grain structure evolution during annealing of a twin-roll-cast Mg alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathi, A.; Department of Metallurgical Engineering and Materials Science, IIT Bombay; Department of Materials Engineering, Monash University

2016-04-15

The evolution of microstructure under static annealing was studied for mid-thickness section of a twin-roll-cast (TRC) magnesium alloy. Annealing was performed at 300 °C and 500 °C for different times. Microstructural evolution was quantitatively analyzed, from optical micrographs, using grain path envelope analysis. Additional information from electron backscatter diffraction (EBSD) was used for addressing the possible mechanism(s). It was found that the TRC structure had a bimodal grain size, which was preserved even after annealing at 300 °C. However, the annealing at 500 °C led to a unimodal grain size. This difference in the grain size distribution created a contrastingmore » behavior in the normalized standard deviations. This was primarily attributed to a competition between recovery and recrystallization, and their respective dominance at 300° and 500 °C. A deformation induced recrystallization recovery (DIRR) model was proposed. The proposed model could successfully address the experimental microstructural evolution. - Highlights: • Annealing of twin roll cast (TRC) magnesium alloy was done at temperatures of 300 °C and 500 °C. • TRC had bimodal structure. Bimodality preserved for annealing at 300 °C. Annealing at 500 °C led to unimodal structure. • Grain evolution was described based on the competition between recovery and recrystallization. • Deformation induced recrystallization recovery (DIRR) mechanistic model was developed.« less

Annealing to optimize the primary drying rate, reduce freezing-induced drying rate heterogeneity, and determine T(g)' in pharmaceutical lyophilization.

PubMed

Searles, J A; Carpenter, J F; Randolph, T W

2001-07-01

In a companion paper we show that the freezing of samples in vials by shelf-ramp freezing results in significant primary drying rate heterogeneity because of a dependence of the ice crystal size on the nucleation temperature during freezing.1 The purpose of this study was to test the hypothesis that post-freezing annealing, in which the product is held at a predetermined temperature for a specified duration, can reduce freezing-induced heterogeneity in sublimation rates. In addition, we test the impact of annealing on primary drying rates. Finally, we use the kinetics of relaxations during annealing to provide a simple measurement of T(g)', the glass transition temperature of the maximally freeze-concentrated amorphous phase, under conditions and time scales most appropriate for industrial lyophilization cycles. Aqueous solutions of hydroxyethyl starch (HES), sucrose, and HES:sucrose were either frozen by placement on a shelf while the temperature was reduced ("shelf-ramp frozen") or by immersion into liquid nitrogen. Samples were then annealed for various durations over a range of temperatures and partially lyophilized to determine the primary drying rate. The morphology of fully dried liquid nitrogen-frozen samples was examined using scanning electron microscopy. Annealing reduced primary drying rate heterogeneity for shelf-ramp frozen samples, and resulted in up to 3.5-fold increases in the primary drying rate. These effects were due to increased ice crystal sizes, simplified amorphous structures, and larger and more numerous holes on the cake surface of annealed samples. Annealed HES samples dissolved slightly faster than their unannealed counterparts. Annealing below T(g)' did not result in increased drying rates. We present a simple new annealing-lyophilization method of T(g)' determination that exploits this phenomenon. It can be carried out with a balance and a freeze-dryer, and has the additional advantage that a large number of candidate formulations can be evaluated simultaneously.

Effects of thermal annealing on the structural and optical properties of carbon-implanted SiO2.

PubMed

Poudel, P R; Paramo, J A; Poudel, P P; Diercks, D R; Strzhemechny, Y M; Rout, B; McDaniel, F D

2012-03-01

Amorphous carbon (a-C) nanoclusters were synthesized by the implantation of carbon ions (C-) into thermally grown silicon dioxide film (-500 nm thick) on a Si (100) wafer and processed by high temperature thermal annealing. The carbon ions were implanted with an energy of 70 keV at a fluence of 5 x 10(17) atoms/cm2. The implanted samples were annealed at 1100 degrees C for different time periods in a gas mixture of 96% Ar+4% H2. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and High Resolution Transmission Electron Microscopy (HRTEM) were used to study the structural properties of both the as-implanted and annealed samples. HRTEM reveals the formation of nanostructures in the annealed samples. The Raman spectroscopy also confirms the formation of carbon nano-clusters in the samples annealed for 10 min, 30 min, 60 min and 90 min. No Raman features originating from the carbon-clusters are observed for the sample annealed further to 120 min, indicating a complete loss of implanted carbon from the SiO2 layer. The loss of the implanted carbon in the 120 min annealed sample from the SiO2 layer was also observed in the XPS depth profile measurements. Room temperature photoluminescence (PL) spectroscopy revealed visible emissions from the samples pointing to carbon ion induced defects as the origin of a broad 2.0-2.4 eV band, and the intrinsic defects in SiO2 as the possible origin of the -2.9 eV bands. In low temperature photoluminescence spectra, two sharp and intense photoluminescence lines at -3.31 eV and -3.34 eV appear for the samples annealed for 90 min and 120 min, whereas no such bands are observed in the samples annealed for 10 min, 30 min, and 60 min. The Si nano-clusters forming at the Si-SiO2 interface could be the origin of these intense peaks.

Evolution of Structural and Optical Properties of ZnO Nanorods Grown on Vacuum Annealed Seed Crystallites

PubMed Central

Khan, Fasihullah; Ajmal, Hafiz Muhammad Salman; Huda, Noor Ul; Kim, Ji Hyun; Kim, Sam-Dong

2018-01-01

In this study, the ambient condition for the as-coated seed layer (SL) annealing at 350 °C is varied from air or nitrogen to vacuum to examine the evolution of structural and optical properties of ZnO nanorods (NRs). The NR crystals of high surface density (~240 rods/μm2) and aspect ratio (~20.3) show greatly enhanced (002) degree of orientation and crystalline quality, when grown on the SLs annealed in vacuum, compared to those annealed in air or nitrogen ambient. This is due to the vacuum-annealed SL crystals of a highly preferred orientation toward (002) and large grain sizes. X-ray photoelectron spectroscopy also reveals that the highest O/Zn atomic ratio of 0.89 is obtained in the case of vacuum-annealed SL crystals, which is due to the effective desorption of hydroxyl groups and other contaminants adsorbed on the surface formed during aqueous solution-based growth process. Near band edge emission (ultra violet range of 360–400 nm) of the vacuum-annealed SLs is also enhanced by 44% and 33% as compared to those annealed in air and nitrogen ambient, respectively, in photoluminescence with significant suppression of visible light emission associated with deep level transition. Due to this improvement of SL optical crystalline quality, the NR crystals grown on the vacuum-annealed SLs produce ~3 times higher ultra violet emission intensity than the other samples. In summary, it is shown that the ZnO NRs preferentially grow along the wurtzite c-axis direction, thereby producing the high crystalline quality of nanostructures when they grow on the vacuum-annealed SLs of high crystalline quality with minimized impurities and excellent preferred orientation. The ZnO nanostructures of high crystalline quality achieved in this study can be utilized for a wide range of potential device applications such as laser diodes, light-emitting diodes, piezoelectric transducers and generators, gas sensors, and ultraviolet detectors. PMID:29373523

Nanocrystalline Cs{sub x}WO{sub 3} particles: Effects of N{sub 2} annealing on microstructure and near-infrared shielding characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jing-Xiao, E-mail: drliu-shi@dlpu.edu.cn; Institute of Multidisciplinary Research for Advanced Material, Tohoku University, Sendai, 980-8577,Japan; Shi, Fei

2013-10-15

In order to further improve the near-infrared shielding properties of cesium tungsten bronze (Cs{sub x}WO{sub 3}) for solar filter applications, Cs{sub x}WO{sub 3} particles were prepared by solvothermal reaction method and the effects of nitrogen annealing on the microstructure and near-infrared shielding properties of Cs{sub x}WO{sub 3} were investigated. The obtained Cs{sub x}WO{sub 3} samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy and spectrophotometer. The results indicate that nanosheet-like Cs{sub x}WO{sub 3} particles with hexagonal structure began to transform into nanorods after annealed at temperature higher than 600 °C. The near-infrared shielding propertiesmore » of Cs{sub x}WO{sub 3} particles could be further improved by N{sub 2} annealing at 500–700 °C. Particularly, the 500 °C-annealed Cs{sub x}WO{sub 3} samples in the N{sub 2} atmosphere showed best near-infrared shielding properties. It was suggested that the excellent near-infrared shielding ability of the 500 °C-annealed Cs{sub x}WO{sub 3} samples is correlated with its minimum O/W atomic ratio and most oxygen vacancies. Highlights: • N{sub 2} annealing could further improve the near-infrared (NIR) shielding of Cs{sub x}WO{sub 3}. • Effects of N{sub 2} annealing on microstructure and NIR shielding of Cs{sub x}WO{sub 3} were studied. • The 500 °C-N{sub 2}-annealed Cs{sub x}WO{sub 3} exhibited minimum O/W ratio and most oxygen vacancies. • The 500 °C-N{sub 2}-annealed Cs{sub x}WO{sub 3} particles exhibited best NIR shielding properties.« less

Quantum versus simulated annealing in wireless interference network optimization.

PubMed

Wang, Chi; Chen, Huo; Jonckheere, Edmond

2016-05-16

Quantum annealing (QA) serves as a specialized optimizer that is able to solve many NP-hard problems and that is believed to have a theoretical advantage over simulated annealing (SA) via quantum tunneling. With the introduction of the D-Wave programmable quantum annealer, a considerable amount of effort has been devoted to detect and quantify quantum speedup. While the debate over speedup remains inconclusive as of now, instead of attempting to show general quantum advantage, here, we focus on a novel real-world application of D-Wave in wireless networking-more specifically, the scheduling of the activation of the air-links for maximum throughput subject to interference avoidance near network nodes. In addition, D-Wave implementation is made error insensitive by a novel Hamiltonian extra penalty weight adjustment that enlarges the gap and substantially reduces the occurrence of interference violations resulting from inevitable spin bias and coupling errors. The major result of this paper is that quantum annealing benefits more than simulated annealing from this gap expansion process, both in terms of ST99 speedup and network queue occupancy. It is the hope that this could become a real-word application niche where potential benefits of quantum annealing could be objectively assessed.

Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell

PubMed Central

Mahalingam, S.; Abdullah, H.; Shaari, S.; Muchtar, A.; Asshari, I.

2015-01-01

Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC. PMID:26146652

Effects of annealing temperature on structure and magnetic properties of CoAl0.2Fe1.8O4/SiO2 nanocomposites

NASA Astrophysics Data System (ADS)

Wang, L.; Li, J.; Liu, M.; Zhang, Y. M.; Lu, J. B.; Li, H. B.

2012-12-01

CoAl0.2Fe1.8O4/SiO2 nanocomposites were prepared by sol-gel method. The effects of annealing temperature on the structure and magnetic properties of the samples were studied by X-ray diffraction, transmission electron microscopy, vibrating sample magnetometer and Mössbauer spectroscopy. The results show that the CoAl0.2Fe1.8O4 in the samples exhibits a spinel structure after being annealed. As annealing temperature increases from 800 to 1200 °C, the average grain size of CoAl0.2Fe1.8O4 in the nanocomposites increases from 5 to 41 nm while the lattice constant decreases from 0.8397 to 0.8391 nm, the saturation magnetization increases from 21.96 to 41.53 emu/g. Coercivity reaches a maximum of 1082 Oe for the sample annealed at 1100 °C, and thereafter decreases with further increasing annealing temperature. Mössbauer spectra show that the isomer shift decreases, hyperfine field increases and the samples transfer from mixed state of superparamagnetic and magnetic order to the completely magnetic order with annealing temperature increasing from 800 to 1200 °C.

Hydrogen incorporation induced the octahedral symmetry variation in VO2 films

NASA Astrophysics Data System (ADS)

Lee, Dooyong; Kim, Hyegyeong; Kim, Ji Woong; Lee, Ik Jae; Kim, Yooseok; Yun, Hyung-Joong; Lee, Jouhahn; Park, Sungkyun

2017-02-01

This study examined the microscopic aspects of macroscopic physical property variations of hydrogen annealed VO2 films, deposited on Al2O3(0001) substrates by RF magnetron sputtering. The temperature-dependent electrical resistivity showed that the as-grown film exhibited a metal-insulator-transition (MIT) at 55.20 °C and 49.26 °C during heating and cooling, respectively. On the other hand, no MIT was observed for the film annealed under a hydrogen environment. Spectroscopic measurements during the in-situ hydrogenation process showed that hydrogen annealing (∼0.3 mbar, up to 300 °C) promoted the V3+ state above 100 °C. Raman spectroscopy and X-ray diffraction confirmed that the as-grown film changed from a monoclinic to rutile structure during hydrogen annealing. In addition, the shift of the (020) diffraction peak position of the hydrogen-annealed film to a lower angle compare to that of the known rutile VO2 film was attributed to the expansion of the unit cell. In addition, local structure analysis showed that an increase in octahedral symmetry after hydrogen annealing is one of the main explanations for the metallic characteristics of the hydrogen-annealed film.

A case study in programming a quantum annealer for hard operational planning problems

NASA Astrophysics Data System (ADS)

Rieffel, Eleanor G.; Venturelli, Davide; O'Gorman, Bryan; Do, Minh B.; Prystay, Elicia M.; Smelyanskiy, Vadim N.

2015-01-01

We report on a case study in programming an early quantum annealer to attack optimization problems related to operational planning. While a number of studies have looked at the performance of quantum annealers on problems native to their architecture, and others have examined performance of select problems stemming from an application area, ours is one of the first studies of a quantum annealer's performance on parametrized families of hard problems from a practical domain. We explore two different general mappings of planning problems to quadratic unconstrained binary optimization (QUBO) problems, and apply them to two parametrized families of planning problems, navigation-type and scheduling-type. We also examine two more compact, but problem-type specific, mappings to QUBO, one for the navigation-type planning problems and one for the scheduling-type planning problems. We study embedding properties and parameter setting and examine their effect on the efficiency with which the quantum annealer solves these problems. From these results, we derive insights useful for the programming and design of future quantum annealers: problem choice, the mapping used, the properties of the embedding, and the annealing profile all matter, each significantly affecting the performance.

Quantum versus simulated annealing in wireless interference network optimization

PubMed Central

Wang, Chi; Chen, Huo; Jonckheere, Edmond

2016-01-01

Quantum annealing (QA) serves as a specialized optimizer that is able to solve many NP-hard problems and that is believed to have a theoretical advantage over simulated annealing (SA) via quantum tunneling. With the introduction of the D-Wave programmable quantum annealer, a considerable amount of effort has been devoted to detect and quantify quantum speedup. While the debate over speedup remains inconclusive as of now, instead of attempting to show general quantum advantage, here, we focus on a novel real-world application of D-Wave in wireless networking—more specifically, the scheduling of the activation of the air-links for maximum throughput subject to interference avoidance near network nodes. In addition, D-Wave implementation is made error insensitive by a novel Hamiltonian extra penalty weight adjustment that enlarges the gap and substantially reduces the occurrence of interference violations resulting from inevitable spin bias and coupling errors. The major result of this paper is that quantum annealing benefits more than simulated annealing from this gap expansion process, both in terms of ST99 speedup and network queue occupancy. It is the hope that this could become a real-word application niche where potential benefits of quantum annealing could be objectively assessed. PMID:27181056

Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protons

NASA Technical Reports Server (NTRS)

Abdulaziz, Salman S.; Woodyard, James R.

1991-01-01

Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.

Tailoring the magnetic properties and magnetorheological behavior of spinel nanocrystalline cobalt ferrite by varying annealing temperature.

PubMed

Sedlacik, Michal; Pavlinek, Vladimir; Peer, Petra; Filip, Petr

2014-05-14

Magnetic nanoparticles of spinel nanocrystalline cobalt ferrite were synthesized via the sol-gel method and subsequent annealing. The influence of the annealing temperature on the structure, magnetic properties, and magnetorheological effect was investigated. The finite crystallite size of the particles, determined by X-ray diffraction and the particle size observed via transmission electron microscopy, increased with the annealing temperature. The magnetic properties observed via a vibrating sample magnetometer showed that an increase in the annealing temperature leads to the increase in the magnetization saturation and, in contrast, a decrease in the coercivity. The effect of annealing on the magnetic properties of ferrite particles has been explained by the recrystallization process at high temperatures. This resulted in grain size growth and a decrease in an imposed stress relating to defects in the crystal lattice structure of the nanoparticles. The magnetorheological characteristics of suspensions of ferrite particles in silicone oil were measured using a rotational rheometer equipped with a magnetic field generator in both steady shear and small-strain oscillatory regimes. The magnetorheological performance expressed as a relative increase in the magnetoviscosity appeared to be significantly higher for suspensions of particles annealed at 1000 °C.

Anneal-Hardening Behavior of Cr-Fe-C Alloy Deposits Prepared in a Cr3+-Based Bath with Fe2+ Ions

PubMed Central

Huang, Ching An; Chen, Jhih You; Wang, Hai

2017-01-01

Cr-Fe-C alloy deposits were successfully prepared on high-carbon tool steel in a Cr3+-based electroplating bath containing Fe2+ ions and suitable complex agents. A Cr-based alloy deposit was obtained with an electroplating current density higher than 25 Adm−2, and a Fe-based alloy deposit was obtained using a current density of 20 Adm−2. Following electroplating, these alloy deposited specimens were annealed via rapid thermal annealing (RTA) at 500 °C for different periods up to 30 s. The experimental results show that Cr- and Fe-based alloy deposits could be significantly hardened after RTA at 500 °C for a few seconds. The maximum hardness was that of the Cr-Fe-C alloy deposit annealed at 500 °C for 10 s. The maximum hardness of 1205 Hv was detected from the annealed Cr-based alloy deposit prepared with 30 ASD. The hardening mechanism of annealed Cr- and Fe-based alloy deposits is attributed to the precipitation of C-related membranes. The hardness values of the annealed Cr- and Fe-based alloy deposits increase with the increasing degree of crystallization of the C-related membranes. PMID:29206206

Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing

PubMed Central

Kim, Hyungsoo; Bong, Jihye; Mikael, Solomon; Kim, Tong June; Williams, Justin C.; Ma, Zhenqiang

2016-01-01

Flexible graphene transistors built on a biocompatible Parylene C substrate would enable active circuitry to be integrated into flexible implantable biomedical devices. An annealing method to improve the performance of a flexible transistor without damaging the flexible substrate is also desirable. Here, we present a fabrication method of a flexible graphene transistor with a bottom-gate coplanar structure on a Parylene C substrate. Also, a current annealing method and its effect on the device performance have been studied. The localized heat generated by the current annealing method improves the drain current, which is attributed to the decreased contact resistance between graphene and S/D electrodes. A maximum current annealing power in the Parylene C-based graphene transistor has been extracted to provide a guideline for an appropriate current annealing. The fabricated flexible graphene transistor shows a field-effect mobility, maximum transconductance, and a Ion/Ioff ratio of 533.5 cm2/V s, 58.1 μS, and 1.76, respectively. The low temperature process and the current annealing method presented here would be useful to fabricate two-dimensional materials-based flexible electronics. PMID:27795570

Effects of process variables in decarburization annealing of Fe-3%Si-0.3%C steel sheet on textures and magnetic properties

NASA Astrophysics Data System (ADS)

Park, Se Min; Koo, Yang Mo; Shim, Byoung Yul; Lee, Dong Nyung

2017-01-01

In Fe-3%Si-0.3%C steel sheet, a relatively strong <100>//ND texture can evolve in the surface layer through the α→γ→α phase transformation in relatively low vacuum (4 Pa) for an annealing time of 10 min and at a cooling rate of 20 K/s. Oxidation of the steel sheet surface prevents the evolution of the <100>//ND texture. However, vacuum-annealing under a vacuum pressure of 1.3×10-3 Pa causes decarburization of the steel sheet, which suppresses oxidation of the steel sheet surface, and subsequent annealing in wet hydrogen of 363 K in dew points causes a columnar grain structure with the <100>//ND texture. After the two-step-annealing (the vacuum annealing under a vacuum pressure of 1.3×10-3 Pa and subsequent decarburizing annealing in wet hydrogen of 363 K in dew points), the decarburized steel sheet exhibits good soft magnetic properties in NO with 3%Si, W15/50 (core loss at 1.5T and 50 Hz) = 2.47 W/kg and B50 (magnetic flux density at 5000 A/m) = 1.71 T.

Improved luminescence intensity and stability of thermal annealed ZnO incorporated Alq3 composite films.

PubMed

Cuba, M; Muralidharan, G

2015-11-01

The 30 wt% of ZnO (weight percentage of ZnO has been optimised) incorporated tris- (8-hydroxyquinoline)aluminum (Alq3) has been synthesised and coated on to glass substrates using dip coating method. The structural and optical properties of the Alq3/ZnO composite film after thermal annealing from 50 to 300 °C insteps 50° has been studied and reported. XRD pattern reveals the presence of crystalline ZnO in all the annealed films. The films annealed above 150 °C reveal the presence of crystalline Alq3 along with crystalline ZnO. The FTIR spectra confirm the presence of hydroxyquinoline and ZnO vibration in all the annealed composite films. The composite films annealed above 150 °C show a partial sublimation and degradation of hydroxyquinoline compounds. The ZnO incorporated composite films (Alq3/ZnO) exhibit two emission peaks, one corresponding to ZnO at 487 nm and another at 513 nm due to Alq3. The films annealed at 200 °C exhibit maximum photoluminescence (PL) intensity than pristine film at 513 nm when excited at 390 nm.

Fast annealing DSA materials designed for sub-5 nm resolution

NASA Astrophysics Data System (ADS)

Deng, Hai; Li, Xuemiao; Peng, Yu; Zhou, Jianuo

2018-03-01

In recent years, high-χ block copolymers (BCPs) have been reported to achieve sub-5 nm resolution. These BCPs always require long annealing time at high annealing temperature, which may limit their implementation into semiconductor process. Since hot baking time in conventional semiconductor process is normally less than 3 minutes, how to shorter the thermal annealing time at lower temperature becomes a new topic for the sub-5 nm high-χ BCPs. In this manuscript, various fluoro-containing BCPs are synthesized by living anionic polymerization or atom transfer radical polymerization. The best BCP formed thermal equilibrium sub-5 nm nano domains after mere 1 min annealing at temperature lower than 100 °C, which is the fastest thermal annealing process reported so far. BCPs with various morphology and domain size are obtained by precise control of both the length and the molar ratio of the two blocks. The resulted smallest half-pitch of the BCPs are less than 5 nm in lamella and hexagonal morphologies. Linear and starshaped BCPs containing PMMA and fluoro-block are also synthesized, which also shows best phase separation into ca. 6 nm half-pitch, however, the annealing time is 1 hour at 180 °C.

Temperature induced CuInSe2 nanocrystal formation in the Cu2Se-In3Se2 multilayer thin films

NASA Astrophysics Data System (ADS)

Mohan, A.; Rajesh, S.

2017-04-01

The paper deals with the impact of annealing on Cu2Se-In3Se2 multilayer structure and discusses the quantum confinements. Thermal evaporation technique was used to prepare multilayer films over the glass substrates. The films were annealed at different temperatures (150 °C-350 °C) under vacuum atmosphere. The XRD pattern reveals that the films exhibit (112) peaks with CuInSe2 Chalcopyrite structure and upon annealing crystallinity improved. The grain size comes around 13-19 nm. The optical band gap value was found to be 2.21 to 2.09 eV and band gap splitting was observed for higher annealing temperatures. The increase in the band gap is related to quantum confinement effect. SEM image shows nano crystals spread over the entire surface for higher annealing temperatures. Optical absorption and PL spectra shows the blue shift during annealing. The HR-TEM shows the particle size in the nano range and which confirms the CuInSe2 nanocrystal formation. AFM image shows the rough surface with homogenous grains for the as deposited films and smooth surface for annealed films.

Thin transparent W-doped indium-zinc oxide (WIZO) layer on glass.

PubMed

Lee, Young-Jun; Lim, Byung-Wook; Kim, Joo-Hyung; Kim, Tae-Won; Oh, Byeong-Yun; Heo, Gi-Seok; Kim, Kwang-Young

2012-07-01

Annealing effect on structural and electrical properties of W-doped IZO (WIZO) films for thin film transistors (TFT) was studied under different process conditions. Thin WIZO films were deposited on glass substrates by RF magnetron co-sputtering technique using indium zinc oxide (10 wt.% ZnO-doped In2O3) and WO3 targets in room temperature. The post annealing temperature was executed from 200 degrees C to 500 degrees C under various O2/Ar ratios. We could not find any big difference from the surface observation of as grown films while it was found that the carrier density and sheet resistance of WIZO films were controlled by O2/Ar ratio and post annealing temperature. Furthermore, the crystallinity of WIZO film was changed as annealing temperature increased, resulting in amorphous structure at the annealing temperature of 200 degrees C, while clear In2O3 peak was observed for the annealed over 300 degrees C. The transmittance of as-grown films over 89% in visible range was obtained. As an active channel layer for TFT, it was found that the variation of resistivity, carrier density and mobility concentration of WIZO film decreased by annealing process.

Effect of annealing temperatures on the morphology and structural properties of PVDF/MgO nanocomposites thin films

NASA Astrophysics Data System (ADS)

Rozana, M. D.; Arshad, A. N.; Wahid, M. H. M.; Habibah, Z.; Sarip, M. N.; Rusop, M.

2018-05-01

This study investigates the effect of annealing on the topography, morphology and crystal phases of poly(vinylideneflouride)/Magnesium Oxide (MgO) nanocomposites thin films via AFM, FESEM and ATR-FTIR. The nanocomposites thin films were annealed at temperatures ranging from 70°C to 170°C. The annealed PVDF/MgO nanocomposites thin films were then cooled at room temperature before removal from the oven. This is to restructure the crystal lattice and to reduce imperfection for the PVDF/MgO nanocomposites thin films. PVDF/MgO nanocomposites thin films with annealing temperatures of 70°C, 90°C and 110°C showed uniform distribution of MgO nanoparticles, relatively low average surface roughness and no visible of defects. High application of annealing temperature on PVDF/MgO nanocomposites thin films caused tear-like defects on the thin films surface as observed by FESEM. The PVDF/MgO nanocomposites thin films annealed at 70°C was found to be a favourable film to be utilized in this study due to its enhanced β-crystalites of PVDF as evident in ATR-FTIR spectra.

Quantum versus simulated annealing in wireless interference network optimization

NASA Astrophysics Data System (ADS)

Wang, Chi; Chen, Huo; Jonckheere, Edmond

2016-05-01

Quantum annealing (QA) serves as a specialized optimizer that is able to solve many NP-hard problems and that is believed to have a theoretical advantage over simulated annealing (SA) via quantum tunneling. With the introduction of the D-Wave programmable quantum annealer, a considerable amount of effort has been devoted to detect and quantify quantum speedup. While the debate over speedup remains inconclusive as of now, instead of attempting to show general quantum advantage, here, we focus on a novel real-world application of D-Wave in wireless networking—more specifically, the scheduling of the activation of the air-links for maximum throughput subject to interference avoidance near network nodes. In addition, D-Wave implementation is made error insensitive by a novel Hamiltonian extra penalty weight adjustment that enlarges the gap and substantially reduces the occurrence of interference violations resulting from inevitable spin bias and coupling errors. The major result of this paper is that quantum annealing benefits more than simulated annealing from this gap expansion process, both in terms of ST99 speedup and network queue occupancy. It is the hope that this could become a real-word application niche where potential benefits of quantum annealing could be objectively assessed.

Enhanced dielectric and electrical properties of annealed PVDF thin film

NASA Astrophysics Data System (ADS)

Arshad, A. N.; Rozana, M. D.; Wahid, M. H. M.; Mahmood, M. K. A.; Sarip, M. N.; Habibah, Z.; Rusop, M.

2018-05-01

Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.

Thermalization, Freeze-out, and Noise: Deciphering Experimental Quantum Annealers

NASA Astrophysics Data System (ADS)

Marshall, Jeffrey; Rieffel, Eleanor G.; Hen, Itay

2017-12-01

By contrasting the performance of two quantum annealers operating at different temperatures, we address recent questions related to the role of temperature in these devices and their function as "Boltzmann samplers." Using a method to reliably calculate the degeneracies of the energy levels of large-scale spin-glass instances, we are able to estimate the instance-dependent effective temperature from the output of annealing runs. Our results corroborate the "freeze-out" picture which posits two regimes, one in which the final state corresponds to a Boltzmann distribution of the final Hamiltonian with a well-defined "effective temperature" determined at a freeze-out point late in the annealing schedule, and another regime in which such a distribution is not necessarily expected. We find that the output distributions of the annealers do not, in general, correspond to a classical Boltzmann distribution for the final Hamiltonian. We also find that the effective temperatures at different programing cycles fluctuate greatly, with the effect worsening with problem size. We discuss the implications of our results for the design of future quantum annealers to act as more-effective Boltzmann samplers and for the programing of such annealers.

Accumulative Roll Bonding and Post-Deformation Annealing of Cu-Al-Mn Shape Memory Alloy

NASA Astrophysics Data System (ADS)

Moghaddam, Ahmad Ostovari; Ketabchi, Mostafa; Afrasiabi, Yaser

2014-12-01

Accumulative roll bonding is a severe plastic deformation process used for Cu-Al-Mn shape memory alloy. The main purpose of this study is to investigate the possibility of grain refinement of Cu-9.5Al-8.2Mn (in wt.%) shape memory alloy using accumulative roll bonding and post-deformation annealing. The alloy was successfully subjected to 5 passes of accumulative roll bonding at 600 °C. The microstructure, properties as well as post-deformation annealing of this alloy were investigated by optical microscopy, scanning electron microscopy, x-ray diffraction, differential scanning calorimeter, and bend and tensile testing. The results showed that after 5 passes of ARB at 600 °C, specimens possessed α + β microstructure with the refined grains, but martensite phases and consequently shape memory effect completely disappeared. Post-deformation annealing was carried out at 700 °C, and the martensite phase with the smallest grain size (less than 40 μm) was obtained after 150 s of annealing at 700 °C. It was found that after 5 passes of ARB and post-deformation annealing, the stability of SME during thermal cycling improved. Also, tensile properties of alloys significantly improved after post-deformation annealing.

Graphene Oxide Annealing Procedures for Graphene-Based Supercapacitors

DTIC Science & Technology

2015-09-01

Annealing Procedures for Graphene-Based Supercapacitors by Louis B Levine and Matthew H Ervin Sensors and Electron Devices Directorate, ARL...SUBTITLE Graphene Oxide Annealing Procedures for Graphene-Based Supercapacitors 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6

Effect of annealing on magnetoresistance and microstructure of multilayered CoFe/Cu systems with different buffer layer

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Krinitsina, T. P.; Chernyshova, T. A.; Ustinov, V. V.

2015-02-01

The effects of annealing on the structure, magnetic hysteresis, and magnetoresistance of [Co90Fe10(15 Å)/Cu(23 Å)] n superlattices with Cr and Co90Fe10 buffer layers of different thicknesses have been studied. The optimum temperature and time of annealing that increase the magnetoresistance were shown to depend on the buffer layer thickness. The coefficients of effective interlayer diffusion due to the annealing have been determined.

Sulfur in the Corrosion of Superalloys.

DTIC Science & Technology

1981-11-06

mechanically on SiC paper from 240 grit to 600 grit. Some samples were pre- annealed in one atmosphere of hydrogen at about 8000 C prior to the experiment...experiments the samples were used as-received while in others the samples were given a high temperature anneal prior to the diffusion anneal . The...C04- 74-G-0130. Cylindrical pellets, about 11 mm in diameter by 1.7 mm thick were used as received or pre- annealed in 1 atm 02. The samples were

First-order martensitic transformation in Heusler-type glass-coated microwires

NASA Astrophysics Data System (ADS)

Zhukov, A.; Ipatov, M.; del Val, J. J.; Taskaev, S.; Churyukanova, M.; Zhukova, V.

2017-12-01

Properly annealed Ni-Mn-Ga glass-covered microwires exhibit a hysteretic anomaly on the temperature dependence of magnetization attributed to the first order martensitic transformation. The temperatures of the structural and magnetic transitions are drastically affected by annealing conditions. Annealed glass-coated Ni-Mn-Ga microwires show a Curie temperature shift close to room temperature. The temperature and magnetic field dependences of magnetization are discussed in terms of atomic disorder, the release of internal stresses, and recrystallization after annealing.

Isochronal annealing studies on 1.1 MeV Fe ion irradiated RAFM steel using variable energy slow positron beam

NASA Astrophysics Data System (ADS)

Ramachandran, Renjith; David, C.; Rajaraman, R.; Abhaya, S.; Panigrahi, B. K.; Amarendra, G.

2017-05-01

Indian Reduced Activation Ferritic Martensitic steel is irradiated with 1.1 MeV Fe ions to a dose of 0.1 dpa at room temperature. The positron annihilation study showed a decrease in S-parameter with annealing temperature due to vacancy annealing. A complete defect recovery is observed beyond 1073 K. The linear nature of (S, W) correlation plot shows that only one kind of defect is present throughout the annealing temperature.

Quantum annealing of the traveling-salesman problem.

PubMed

Martonák, Roman; Santoro, Giuseppe E; Tosatti, Erio

2004-11-01

We propose a path-integral Monte Carlo quantum annealing scheme for the symmetric traveling-salesman problem, based on a highly constrained Ising-like representation, and we compare its performance against standard thermal simulated annealing. The Monte Carlo moves implemented are standard, and consist in restructuring a tour by exchanging two links (two-opt moves). The quantum annealing scheme, even with a drastically simple form of kinetic energy, appears definitely superior to the classical one, when tested on a 1002-city instance of the standard TSPLIB.

A Study of the Batch Annealing of Cold-Rolled HSLA Steels Containing Niobium or Titanium

NASA Astrophysics Data System (ADS)

Fang, Chao; Garcia, C. Isaac; Choi, Shi-Hoon; DeArdo, Anthony J.

2015-08-01

The batch annealing behavior of two cold-rolled, microalloyed HSLA steels has been studied in this program. One steel was microalloyed with niobium while the other with titanium. A successfully batch annealed steel will exhibit minimum variation in properties along the length of the coil, even though the inner and outer wraps experience faster heating and cooling rates and lower soaking temperatures, i.e., the so-called "cold spot" areas, than the mid-length portion of the coil, i.e., the so-called "hot spot" areas. The variation in strength and ductility is caused by differences in the extent of annealing in the different areas. It has been known for 30 years that titanium-bearing HSLA steels show more variability after batch annealing than do the niobium-bearing steels. One of the goals of this study was to try to explain this observation. In this study, the annealing kinetics of the surface and center layers of the cold-rolled sheet were compared. The surface and center layers of the niobium steel and the surface layer of the titanium steel all showed similar annealing kinetics, while the center layer of the titanium steel exhibited much slower kinetics. Metallographic results indicate that the stored energy of the cold-rolled condition, as revealed by grain center sub-grain boundary density, appeared to strongly influence the annealing kinetics. The kinetics were followed by the Kernel Average Misorientation reconstruction of the microstructure at different stages on annealing. Possible pinning effects caused by microalloy precipitates were also considered. Methods of improving uniformity and increasing kinetics, involving optimizing both hot-rolled and cold-rolled microstructure, are suggested.

Influence of post-deposition annealing on structural, morphological and optical properties of copper (II) acetylacetonate thin films.

PubMed

Abdel-Khalek, H; El-Samahi, M I; El-Mahalawy, Ahmed M

2018-05-21

In this study, the effect of thermal annealing under vacuum conditions on structural, morphological and optical properties of thermally evaporated copper (II) acetylacetonate, cu(acac) 2 , thin films were investigated. The copper (II) acetylacetonate thin films were deposited using thermal evaporation technique at vacuum pressure ~1 × 10 -5  mbar. The deposited films were thermally annealed at 323, 373, 423, and 473 K for 2 h in vacuum. The thermogravimetric analysis of cu(acac) 2 powder indicated a thermal stability of cu(acac) 2 up to 423 K. The effects of thermal annealing on the structural properties of cu(acac) 2 were evaluated employing X-ray diffraction method and the analysis showed a polycrystalline nature of the as-deposited and annealed films with a preferred orientation in [1¯01] direction. Fourier transformation infrared (FTIR) technique was used to negate the decomposition of copper (II) acetylacetonate during preparation or/and annealing up to 423 K. The surface morphology of the prepared films was characterized by means of field emission scanning electron microscopy (FESEM). A significant enhancement of the morphological properties of cu(acac) 2 thin films was obtained till the annealing temperature reaches 423 K. The variation of optical constants that estimated from spectrophotometric measurements of the prepared thin films was investigated as a function of annealing temperature. The annealing process presented significantly impacted the nonlinear optical properties such as third-order optical susceptibility χ (3) and nonlinear refractive index n 2 of cu(acac) 2 thin films. Copyright © 2018 Elsevier B.V. All rights reserved.

Forming an age hardenable aluminum alloy with intermediate annealing

NASA Astrophysics Data System (ADS)

Wang, Kaifeng; Carsley, John E.; Stoughton, Thomas B.; Li, Jingjing; Zhang, Lianhong; He, Baiyan

2013-12-01

A method to improve formability of aluminum sheet alloys by a two-stage stamping process with intermediate annealing was developed for a non-age hardenable Al-Mg alloy where the annealing heat treatment provided recovery of cold work from the initial stamping and recrystallization of the microstructure to enhance the forming limits of the material. This method was extended to an age hardenable, Al-Mg-Si alloy, which is complicated by the competing metallurgical effects during heat treatment including recovery (softening effect) vs. precipitation (hardening effect). An annealing heat treatment process condition was discovered wherein the stored strain energy from an initial plastic deformation can be sufficiently recovered to enhance formability in a second deformation; however, there is a deleterious effect on subsequent precipitation hardening. The improvement in formability was quantified with uniaxial tensile tests as well as with the forming limit diagram. Since strain-based forming limit curves (FLC) are sensitive to pre-strain history, both stress-based FLCs and polar-effective-plastic-strain (PEPS) FLCs, which are path-independent, were used to evaluate the forming limits after preform annealing. A technique was developed to calculate the stress-based FLC in which a residual-effective-plastic-strain (REPS) was determined by overlapping the hardening curve of the pre-strained and annealed material with that of the simply-annealed- material. After converting the strain-based FLCs using the constant REPS method, it was found that the stress-based FLCs and the PEPS FLCs of the post-annealed materials were quite similar and both tools are applicable for evaluating the forming limits of Al-Mg-Si alloys for a two-step stamping process with intermediate annealing.

Effect of intermediate annealing on the microstructure and mechanical property of ZK60 magnesium alloy produced by twin roll casting and hot rolling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Hongmei, E-mail: hmchen@just.edu.cn; Zang, Qianhao; Yu, Hui

2015-08-15

Twin roll cast (designated as TRC in short) ZK60 magnesium alloy strip with 3.5 mm thickness was used in this paper. The TRC ZK60 strip was multi-pass rolled at different temperatures, intermediate annealing heat treatment was performed when the thickness of the strip changed from 3.5 mm to 1 mm, and then continued to be rolled until the thickness reached to 0.5 mm. The effect of intermediate annealing during rolling process on microstructure, texture and room temperature mechanical properties of TRC ZK60 strip was studied by using OM, TEM, XRD and electronic universal testing machine. The introduction of intermediate annealingmore » can contribute to recrystallization in the ZK60 sheet which was greatly deformed, and help to reduce the stress concentration generated in the rolling process. Microstructure uniformity and mechanical properties of the ZK60 alloy sheet were also improved; in particular, the room temperature elongation was greatly improved. When the TRC ZK60 strip was rolled at 300 °C and 350 °C, the room temperature elongation of the rolled sheet with 0.5 mm thickness which was intermediate annealed during the rolling process was increased by 95% and 72% than that of no intermediate annealing, respectively. - Highlights: • Intermediate annealing was introduced during hot rolling process of twin roll cast ZK60 alloy. • Intermediate annealing can contribute to recrystallization and reduce the stress concentration in the deformed ZK60 sheet. • Microstructure uniformity and mechanical properties of the ZK60 sheet were improved, in particular, the room temperature elongation. • The elongation of the rolled ZK60 sheet after intermediate annealed was increased by 95% and 72% than that of no intermediate annealing.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majewski, Pawel W.; Yager, Kevin G.

Block-copolymers self-assemble into diverse morphologies, where nanoscale order can be finely tuned via block architecture and processing conditions. However, the ultimate usage of these materials in real-world applications may be hampered by the extremely long thermal annealing times—hours or days—required to achieve good order. Here, we provide an overview of the fundamentals of block-copolymer self-assembly kinetics, and review the techniques that have been demonstrated to influence, and enhance, these ordering kinetics. We discuss the inherent tradeoffs between oven annealing, solvent annealing, microwave annealing, zone annealing, and other directed self-assembly methods; including an assessment of spatial and temporal characteristics. Here, wemore » also review both real-space and reciprocal-space analysis techniques for quantifying order in these systems.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abe, T., E-mail: kikutani.t.aa@m.titech.ac.jp; Takarada, W., E-mail: kikutani.t.aa@m.titech.ac.jp; Kikutani, T., E-mail: kikutani.t.aa@m.titech.ac.jp

Effect of pre-annealing on stress and birefringence behavior of poly(ethylene naphthalate) (PEN) films during stretching and relaxation processes was investigated. Amorphous and non-oriented PEN films were pre-annealed under the conditions of different temperatures and periods. The pre-annealed films were stretched uniaxially or equi-biaxially and then relaxed at fixed length. It was found that pre-annealing did not cause any notable change for the initial behavior of refractive indices variation, whereas the behaviors after necking were significantly affected. Through the comparison between in-plane and out-of-plane birefringence and the analysis of wide-angle x-ray diffraction patterns of drawn films of both stretching modes, itmore » was confirmed that the orientation of naphthalene ring in the film plane was enhanced by pre-annealing.« less

Effect of rapid thermal annealing on the structural and electrical properties of RF sputtered CCTO thin film

NASA Astrophysics Data System (ADS)

Tripathy, N.; Das, K. C.; Ghosh, S. P.; Bose, G.; Kar, J. P.

2017-02-01

CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C revealed the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.

Connection between the conformation and emission properties of poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] single molecules during thermal annealing

NASA Astrophysics Data System (ADS)

Ou, Jiemei; Yang, Yuzhao; Lin, Wensheng; Yuan, Zhongke; Gan, Lin; Lin, Xiaofeng; Chen, Xudong; Chen, Yujie

2015-03-01

We investigated the transitions of conformations and their effects on emission properties of poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) single molecules in PMMA matrix during thermal annealing process. Total internal reflection fluorescence microscopy measurements reveal the transformation from collapsed conformations to extended, highly ordered rod-like structures of MEH-PPV single molecules during thermal annealing. The blue shifts in the ensemble single molecule PL spectra support our hypnosis. The transition occurs as the annealing temperature exceeds 100 °C, implying that an annealing temperature near the glass transition temperature Tg of matrix is ideal for the control and optimization of blend polymer films.

Rapid ordering of block copolymer thin films

NASA Astrophysics Data System (ADS)

Majewski, Pawel W.; Yager, Kevin G.

2016-10-01

Block-copolymers self-assemble into diverse morphologies, where nanoscale order can be finely tuned via block architecture and processing conditions. However, the ultimate usage of these materials in real-world applications may be hampered by the extremely long thermal annealing times—hours or days—required to achieve good order. Here, we provide an overview of the fundamentals of block-copolymer self-assembly kinetics, and review the techniques that have been demonstrated to influence, and enhance, these ordering kinetics. We discuss the inherent tradeoffs between oven annealing, solvent annealing, microwave annealing, zone annealing, and other directed self-assembly methods; including an assessment of spatial and temporal characteristics. We also review both real-space and reciprocal-space analysis techniques for quantifying order in these systems.

Low-Temperature-Annealed Reduced Graphene Oxide-Polyaniline Nanocomposites for Supercapacitor Applications

NASA Astrophysics Data System (ADS)

Liao, Chen-Yu; Chien, Hung-Hua; Hao, Yu-Chuan; Chen, Chieh-Wen; Yu, Ing-Song; Chen, Jian-Zhang

2018-04-01

Screen-printed reduced graphene oxide (rGO)-polyaniline (PANI) nanocomposites with/without post-annealing were used as the electrode of a supercapacitor with a polyvinyl alcohol/H2SO4 quasi-solid-state gel electrolyte. Annealing can remove part of the ineffective organic binders and thus enhance the supercapacitive performance. However, too high an annealing temperature may damage PANI, thus reducing the pseudocapacitance. Annealing at 100°C for 10 min results in the best achieved areal capacitance of 102.73 mF/cm2, as evaluated by cyclic voltammetry (CV) under a potential scan rate of 2 mV/s. The capacitance retention rate is 88% after 1000 CV cycles under bending with a bending radius of 0.55 cm.

Interference effect on annealing temperature of A and E centers in silicon.

NASA Technical Reports Server (NTRS)

Fang, P. H.; Tanaka, T.

1971-01-01

The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.

Excimer laser annealing of NiTi shape memory alloy thin film

NASA Astrophysics Data System (ADS)

Xie, Qiong; Huang, Weimin; Hong, Ming Hui; Song, Wendong; Chong, Tow Chong

2003-02-01

NiTi Shape Memory Alloy (SMA) is with great potential for actuation in microsystems. It is particularly suitable for medical applications due to its excellent biocompatibility. In MEMS, local annealing of SMA is required in the process of fabrication. In this paper, local annealing of Ni52Ti48 SMA with excimer laser is proposed for the first time. The Ni52Ti48 thin film in a thickness of 5 μm was deposited on Si (100) wafer by sputtering at room temperature. After that, the thin film was annealed by excimer laser (248nm KrF laser) for the first time. Field-Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) were used to characterize the surface profile of the deposited film after laser annealing. The phase transformation was measured by Differential Scanning Calorimeter (DSC) test. It is concluded that NiTi film sputtering on Si(100) substrate at room temperature possesses phase transformation after local laser annealing but with cracks.

Non-stoquastic Hamiltonians in quantum annealing via geometric phases

NASA Astrophysics Data System (ADS)

Vinci, Walter; Lidar, Daniel A.

2017-09-01

We argue that a complete description of quantum annealing implemented with continuous variables must take into account the non-adiabatic Aharonov-Anandan geometric phase that arises when the system Hamiltonian changes during the anneal. We show that this geometric effect leads to the appearance of non-stoquasticity in the effective quantum Ising Hamiltonians that are typically used to describe quantum annealing with flux qubits. We explicitly demonstrate the effect of this geometric non-stoquasticity when quantum annealing is performed with a system of one and two coupled flux qubits. The realization of non-stoquastic Hamiltonians has important implications from a computational complexity perspective, since it is believed that in many cases quantum annealing with stoquastic Hamiltonians can be efficiently simulated via classical algorithms such as Quantum Monte Carlo. It is well known that the direct implementation of non-stoquastic Hamiltonians with flux qubits is particularly challenging. Our results suggest an alternative path for the implementation of non-stoquasticity via geometric phases that can be exploited for computational purposes.

Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2010-01-01

Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

PubMed

Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

2017-01-01

This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

Defects versus grain size effects on the ferromagnetism of ZrO2 nanocrystals clarified by positron annihilation

NASA Astrophysics Data System (ADS)

Wang, D. D.; Qi, N.; Jiang, M.; Chen, Z. Q.

2013-01-01

Undoped ZrO2 nanocrystals were annealed in open air from 100 °C to 1300 °C. X-ray diffraction and transmission electron microscope were used to study the structure change and grain growth. Both the methods reveal that the ZrO2 grain size has very slight increase after annealing up to 900 °C. Positron annihilation measurements reveal a high concentration of vacancy defects which most probably exist in the grain boundary region. Thermal annealing above 500 °C causes recovery of these defects, and after annealing at 1200 °C, most of them are removed. Room temperature ferromagnetism is observed for the sample annealed at 100 °C and 500 °C. The magnetization becomes very weak after the nanocrystals are annealed at 700 °C, and it almost disappears at 1000 °C. It is clear that the intrinsic ferromagnetism in our ZrO2 nanocrystals is mostly related with the interfacial defects instead of grain size effects.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

NASA Astrophysics Data System (ADS)

To, C. K.; Yang, B.; Beling, C. D.; Fung, S.; Ling, C. C.; Gong, M.

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6x1017cm-2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600 °C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.

GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bom, N. M., E-mail: nicolau.bom@ufrgs.br; Soares, G. V.; Hartmann, S.

2014-10-06

Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnantmore » oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.« less

Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

PubMed

Sadowski, Janusz; Domagala, Jaroslaw Z; Mathieu, Roland; Kovacs, Andras; Dłużewski, Piotr

2013-05-15

The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 °C annealing and diffuse throughout the GaAs spacer layers at 630 °C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.

Quantum annealing versus classical machine learning applied to a simplified computational biology problem

NASA Astrophysics Data System (ADS)

Li, Richard Y.; Di Felice, Rosa; Rohs, Remo; Lidar, Daniel A.

2018-03-01

Transcription factors regulate gene expression, but how these proteins recognize and specifically bind to their DNA targets is still debated. Machine learning models are effective means to reveal interaction mechanisms. Here we studied the ability of a quantum machine learning approach to classify and rank binding affinities. Using simplified data sets of a small number of DNA sequences derived from actual binding affinity experiments, we trained a commercially available quantum annealer to classify and rank transcription factor binding. The results were compared to state-of-the-art classical approaches for the same simplified data sets, including simulated annealing, simulated quantum annealing, multiple linear regression, LASSO, and extreme gradient boosting. Despite technological limitations, we find a slight advantage in classification performance and nearly equal ranking performance using the quantum annealer for these fairly small training data sets. Thus, we propose that quantum annealing might be an effective method to implement machine learning for certain computational biology problems.

Microstructural evolution and grain growth kinetics of GZ31 magnesium alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roostaei, M., E-mail: miladroustaei68@ut.ac.ir

2016-08-15

Grain growth behavior of Mg–3Gd–1Zn (GZ31) magnesium alloy was studied in a wide range of annealing time and temperature to clarify the kinetics of grain growth, microstructural evolution and related metallurgical phenomena. This material exhibited typical normal grain growth mode under annealing conditions with annealing temperature of lower than 300 °C and soaking time of lower than 240 min. However, the abnormality in grain growth was also evident at annealing temperature of 400 °C and 500 °C. The dependence of abnormal grain growth (AGG) at mentioned annealing temperatures upon microstructural features such as dispersed precipitates, which were rich in Znmore » and Gd, was investigated by optical micrographs, X-ray diffraction patterns, scanning electron microscopy images, and energy dispersive X-ray analysis spectra. The bimodality in grain-size distribution histograms also signified the occurrence of AGG. Based on the experimental data on grain growth obtained by annealing treatments, the grain growth exponent and the activation energy were also figured out.« less

The Kinetics of the as Grown and Annealed Self-Assembled Monolayer Studied by Force Spectroscopy

NASA Astrophysics Data System (ADS)

Habib, Huma; Yasar, M.; Mehmood, S.; Rafique, Saima; Bhatti, A. S.; Naeem, Aisha

The growth of biological systems like DNA, peptides and proteins are accredited to the self-assembly processes from the molecular level to the nanoscale. The flawless immobilization of DNA on any surface is quite an important step to the development of DNA-based biosensors. The present paper reports the use of atomic force microscopy to determine the mechanical properties of the as grown and annealed self-assembled monolayer (SAM) as well as the mutated DNA immobilized on the SAM. The SAM of alkane thiol (16-mercapto-1-hexadecanol) was developed on Au surface, which was then annealed and analyzed for its structural and mechanical properties. The surface coverage, height and monolayer’s order was studied as a function of incubation time and annealing time. Excessive annealing led to the defragmentation and desorption of SAM structures due to breaking of hydrocarbon bonds. AFM was employed to determine the detach separation, pull-off and work of adhesion of the as grown and annealed SAM.

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

NASA Astrophysics Data System (ADS)

Aguirre, F.; Pazos, S.; Palumbo, F. R. M.; Fadida, S.; Winter, R.; Eizenberg, M.

2018-04-01

The influence of forming gas annealing on the degradation at a constant stress voltage of multi-layered germanium-based Metal-Oxide-Semiconductor capacitors (p-Ge/GeOx/Al2O3/High-K/Metal Gate) has been analyzed in terms of the C-V hysteresis and flat band voltage as a function of both negative and positive stress fields. Significant differences were found for the case of negative voltage stress between the annealed and non-annealed samples, independently of the stressing time. It was found that the hole trapping effect decreases in the case of the forming gas annealed samples, indicating strong passivation of defects with energies close to the valence band existing in the oxide-semiconductor interface during the forming gas annealing. Finally, a comparison between the degradation dynamics of Germanium and III-V (n-InGaAs) MOS stacks is presented to summarize the main challenges in the integration of reliable Ge-III-V hybrid devices.

Response of pMOS dosemeters on gamma-ray irradiation during its re-use.

PubMed

Pejovic, Milic M; Pejovic, Momcilo M; Jaksic, Aleksandar B

2013-08-01

Response of pMOS dosemeters during two successive irradiations with gamma-ray irradiation to a dose of 35 Gy and annealing at room and elevated temperature has been studied. The response was followed on the basis of threshold voltage shift, determined from transfer characteristics, as a function of absorbed dose or annealing time. It was shown that the threshold voltage shifts during first and second irradiation for the gate bias during irradiation of 5 and 2.5 V insignificantly differ although complete fading was not achieved after the first cycle of annealing. In order to analyse the defects formed in oxide and at the interface during irradiation and annealing, which are responsible for threshold voltage shift, midgap and charge-pumping techniques were used. It was shown that during first irradiation and annealing a dominant influence to threshold voltage shift is made by fixed oxide traps, while at the beginning of the second annealing cycle, threshold voltage shift is a consequence of both fixed oxide traps and slow switching traps.

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

PubMed Central

Hou, Sihui; Zhuang, Xinming; Yang, Zuchong

2018-01-01

Nitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance. PMID:29596331

Thermal annealing effect on the Mg-doped AlGaN/GaN superlattice

NASA Astrophysics Data System (ADS)

Wang, Baozhu; An, Shengbiao; Wen, Huanming; Wu, Ruihong; Wang, Xiaojun; Wang, Xiaoliang

2009-11-01

Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect gas. Hall, photoluminescence (PL), high resolution x-ray diffraction (HRXRD) and atomic-force microscopy (AFM) are used to characterize the electrical, optical and structural properties of the as-grown and annealed samples, respectively. After annealing, the Hall results indicate more Mg acceptors are activated, which leads to higher hole concentration and lower p-type resistivity. The PL intensity of Mg related defect band shows a strong decrease after annealing. The annealing of the superlattice degrade the interface quality of the AlGaN/GaN from the HRXRD results. Many nanometer-grains can be observed on the surface of AlGaN/GaN superlattice from the AFM image. This maybe related with the decomposing of GaN or the separating of Mg from the AlGaN/GaN superlattice.

Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V2O5 alternating layers structure

NASA Astrophysics Data System (ADS)

Khalfaoui, A.; Ilahi, S.; Abdel-Rahman, M.; Zia, M. F.; Alduraibi, M.; Ilahi, B.; Yacoubi, N.

2017-10-01

The VxOy material is fabricated by alternating multilayer of V/V2O5. Two sets of VxOy are presented annealed at 300 °C and 400 °C for 20, 30 and 40 min. We have determined optical absorption spectra of the two sets by comparison between experimental and theoretical PDS amplitude signal. In fact, a variation of the bandgap energy from 2.34eV to 2.49 eV has found for both set annealed at 300 °C and 400 °C for various annealing time. The variation of bandgap energy is discussed testifying a structural and compositional change. Moreover, thermal conductivity of the set annealed at 400 °C showed a variation from 1.96 W/m K to 6.2 W/m K noting a decrease up to 2.89 W/m K for that annealed for 30 min.

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

PubMed

Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

2014-10-21

Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV <10 cm s(-1)). The deduced values are close to the best reported SRV obtained by the high thermal budget process (with annealing time between 10-30 min), conventionally used for improved surface passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

NASA Astrophysics Data System (ADS)

Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

2015-02-01

In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Precision Laser Annealing of Focal Plane Arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bender, Daniel A.; DeRose, Christopher; Starbuck, Andrew Lea

2015-09-01

We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing windowmore » over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.« less

Defect mediated ferromagnetism in Ni-doped ZnO nanocrystals evidenced by positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Chen, Zhi-Yuan; Chen, Z. Q.; Zou, B.; Zhao, X. G.; Tang, Z.; Wang, S. J.

2012-10-01

NiO/ZnO nanocomposites with NiO content of 4 at. % and 20 at. % were annealed up to 1200 °C to get Ni doped ZnO nanocrystals. Raman scattering spectra illustrate a broad and strong band at 500-600cm-1 in all nanocomposites after annealing above 700 °C, which suggests incorporation of Ni in the ZnO lattice. However, x-ray diffraction measurements show that NiO phase can be still observed in all nanocomposites after annealing, which indicates that Ni is partially doped into the ZnO structure. Positron annihilation measurements reveal large number of vacancy defects in the interface region of all nanocomposites, and they are gradually recovered with increasing annealing temperature up to 1000 °C. Room temperature ferromagnetism can be observed in the NiO/ZnO nanocomposites, which is stronger in the 20 at. % NiO/ZnO nanocomposites, and the magnetization decreases continuously with increasing annealing temperature. This indicates that the ferromagnetism at low annealing temperatures originates from the NiO nanograins, and they become antiferromanetic after subsequent higher temperature annealing which leads to the weakening of ferromagnetism. After annealing up to 1000 °C, the ferromagnetism in both the two samples becomes nearly invisible. The disappearance of ferromagnetism shows good coincidence with the recovery of vacancy defects in NiO/ZnO nanocomposites. It can be inferred that the ferromagnetism is mediated by vacancy defects which are distributed in the interface region.

Effect of wheel speed and annealing temperature on microstructure and texture evolution of Ni{sub 45}Mn{sub 36.6}In{sub 13.4}Co{sub 5} ribbon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Yan, E-mail: yanfeng@nwpu.edu.cn

Ni{sub 45}Mn{sub 36.6}In{sub 13.4}Co{sub 5} magnetic shape memory alloy was successfully produced as preferentially textured ribbon by melting spinning with different wheel speed. X-ray diffraction (XRD) and electron back scatter diffraction (EBSD) were used to study structure and texture evolution of these melt-spun ribbons. The thickness of melt-spun ribbon is 42 μm, 65 μm and 30 μm depending on wheel speed of 1 0 m/s, 15 m/s and 20 m/s, respectively. Density of α fiber texture (〈100〉//ND) vary with wheel speed changes, and is most intensive in the ribbon with wheel speed of 15 m/s. Grains of the ribbons growmore » after being annealed at 873 K, 973 K, 1073 K and 1173 K, recrystallization was not observed in ribbons after being annealed at 873 K but occurred in ribbons after being annealed at higher temperatures. The α fiber texture becomes weaker to some extent after annealing at different temperatures, due to new recrystallization texture formed at the process of annealing. - Highlights: •Sectional part of shape memory ribbon is firstly investigated by EBSD method. •Thickness and texture of ribbons vary with wheel speed. •Annealing temperature affect texture and microstructure evolution greatly. •Recrystallization textures were observed in ribbons after being annealed.« less

Electrical, structural and surface morphological properties of thermally stable low-resistance W/Ti/Au multilayer ohmic contacts to n-type GaN

NASA Astrophysics Data System (ADS)

Jyothi, I.; Reddy, V. Rajagopal

2010-10-01

A W/Ti/Au multilayer scheme has been fabricated for achieving thermally stable low-resistance ohmic contact to n-type GaN (4.0 × 10 18 cm -3). It is shown that the as-deposited W/Ti/Au contact exhibits near linear I- V behaviour. However, annealing at temperature below 800 °C the contacts exhibit non-linear behaviour. After annealing at a temperature in excess of 850 °C, the W/Ti/Au contact showed ohmic behaviour. The W/Ti/Au contact produced specific contact resistance as low as 6.7 × 10 -6 Ω cm 2 after annealing at 900 °C for 1 min in a N 2 ambient. It is noted that the specific contact resistance decreases with increase in annealing temperature. It is also noted that annealing the contacts at 900 °C for 30 min causes insignificant degradation of the electrical and thermal properties. It is further shown that the overall surface morphology of the W/Ti/Au stayed fairly smooth even after annealing at 900 °C. The W/Ti/Au ohmic contact showed good edge sharpness after annealing at 900 °C for 30 min. Based on the Auger electron spectroscopy and glancing angle X-ray diffraction results, possible explanation for the annealing dependence of the specific contact resistance of the W/Ti/Au contacts are described and discussed.

Annealing Induced Re-crystallization in CH3NH3PbI3−xClx for High Performance Perovskite Solar Cells

PubMed Central

Yang, Yingguo; Feng, Shanglei; Li, Meng; Xu, Weidong; Yin, Guangzhi; Wang, Zhaokui; Sun, Baoquan; Gao, Xingyu

2017-01-01

Using poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as hole conductor, a series of inverted planar CH3NH3PbI3−xClx perovskite solar cells (PSCs) were fabricated based on perovskite annealed by an improved time-temperature dependent (TTD) procedure in a flowing nitrogen atmosphere for different time. Only after an optimum annealing time, an optimized power conversion efficiency of 14.36% could be achieved. To understand their performance dependence on annealing time, an in situ real-time synchrotron-based grazing incidence X-ray diffraction (GIXRD) was used to monitor a step-by-step gradual structure transformation from distinct mainly organic-inorganic hybrid materials into highly ordered CH3NH3PbI3 crystal during annealing. However, a re-crystallization process of perovskite crystal was observed for the first time during such an annealing procedure, which helps to enhance the perovskite crystallization and preferential orientations. The present GIXRD findings could well explain the drops of the open circuit voltage (Voc) and the fill factor (FF) during the ramping of temperature as well as the optimized power conversion efficiency achieved after an optimum annealing time. Thus, the present study not only illustrates clearly the decisive roles of post-annealing in the formation of solution-processed perovskite to better understand its formation mechanism, but also demonstrates the crucial dependences of device performance on the perovskite microstructure in PSCs. PMID:28429762

Correlation between reflectance and photoluminescent properties of al-rich ZnO nano-structures

NASA Astrophysics Data System (ADS)

Khan, Firoz; Baek, Seong-Ho; Ahmad, Nafis; Lee, Gun Hee; Seo, Tae Hoon; Suh, Eun-kyung; Kim, Jae Hyun

2015-05-01

Al rich zinc oxide nano-structured films were synthesized using spin coating sol-gel technique. The films were annealed in oxygen ambient in the temperature range of 200-700 °C. The structural, optical, and photoluminescence (PL) properties of the films were studied at various annealing temperatures using X-ray diffraction spectroscopy, field emission scanning electron microscopy, photoluminescence emission spectra measurement, and Raman and UV-Vis spectroscopy. The optical band gap was found to decrease with the increase of the annealing temperature following the Gauss Amp function due to the confinement of the exciton. The PL peak intensity in the near band region (INBE) was found to increase with the increase of the annealing temperature up to 600 °C, then to decrease fast to a lower value for the annealing temperature of 700 °C due to crystalline quality. The Raman peak of E2 (low) was red shifted from 118 cm-1 to 126 cm-1 with the increase of the annealing temperature. The intensity of the second order phonon (TA+LO) at 674 cm-1 was found to decrease with the increase of the annealing temperature. The normalized values of the reflectance and the PL intensity in the NBE region were highest for the annealing temperature of 600 °C. A special correlation was found between the reflectance at λ = 1000 nm and the normalized PL intensity in the green region due to scattering due to presence of grains.

Effects of annealing on the optical, structural, and chemical properties of TiO2 and MgF2 thin films prepared by plasma ion-assisted deposition.

PubMed

Woo, Seouk-Hoon; Hwangbo, Chang Kwon

2006-03-01

Effects of thermal annealing at 400 degrees C on the optical, structural, and chemical properties of TiO2 single-layer, MgF2 single-layer, and TiO2/MgF2 narrow-bandpass filters deposited by conventional electron-beam evaporation (CE) and plasma ion-assisted deposition (PIAD) were investigated. In the case of TiO2 films, the results show that the annealing of both CE and PIAD TiO2 films increases the refractive index slightly and the extinction coefficient and surface roughness greatly. Annealing decreases the thickness of CE TiO2 films drastically, whereas it does not vary that of PIAD TiO2 films. For PIAD MgF2 films, annealing increases the refractive index and decreases the extinction coefficient drastically. An x-ray photoelectron spectroscopy analysis suggests that an increase in the refractive index and a decrease in the extinction coefficient for PIAD MgF2 films after annealing may be related to the enhanced concentration of MgO in the annealed PIAD MgF2 films and the changes in the chemical bonding states of Mg 2p, F 1s, and O is. It is found that (TiO2/MgF2) multilayer filters, consisting of PIAD TiO2 and CE MgF2 films, are as deposited without microcracks and are also thermally stable after annealing.

Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing.

PubMed

Ye, Chao; Ran, Guang; Zhou, Wei; Shen, Qiang; Feng, Qijie; Lin, Jianxin

2017-10-25

Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson-Mehl-Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.

Annealing Reduces Free Volumes In Thermoplastics

NASA Technical Reports Server (NTRS)

Singh, Jag J.; St. Clair, Terry L.

1988-01-01

Investigation conducted to determine free volumes and water-absorption characteristics of two types of thermoplastic polymide as functions of annealing histories. Reductions reach asymptotic values after several annealing cycles. High-temperature thermoplastics excellent candidates for use in aerospace applications. Graphite-fiber composites containing thermoplastic matrices have wide applicability.

Extended defects and hydrogen interactions in ion implanted silicon

NASA Astrophysics Data System (ADS)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (<650°C) defect dissolution and defect injection dominates, resulting in increased junction depths. At higher anneal temperatures, however, repair dominates over defect injection resulting in shallower junctions. Hydrogenation experiments shows that hydrogen enhances dopant activation and reduces TED at low anneal temperatures (<550°C). At anneal temperatures >550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for along time (300min). Also presented is the recipe for formation of multiple cavity layers and the electrical and optical properties of these cavities. Electrically, these cavities are metastable, with two strong minority carrier peaks formed by multiple defect levels. Photoluminescence measurements reveal a strong 0.8eV photon peak.

78 FR 50378 - Diffusion-Annealed, Nickel-Plated Flat-Rolled Steel Products From Japan: Postponement of...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-08-19

...-Plated Flat-Rolled Steel Products From Japan: Postponement of Preliminary Determination of Antidumping... investigation of diffusion-annealed, nickel-plated flat-rolled steel products from Japan. See Diffusion- Annealed, Nickel-Plated Flat-Rolled Steel Products From Japan: Initiation of Antidumping Duty Investigation...

Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com

2016-07-06

Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

Improved cost-effectiveness of the block co-polymer anneal process for DSA

NASA Astrophysics Data System (ADS)

Pathangi, Hari; Stokhof, Maarten; Knaepen, Werner; Vaid, Varun; Mallik, Arindam; Chan, Boon Teik; Vandenbroeck, Nadia; Maes, Jan Willem; Gronheid, Roel

2016-04-01

This manuscript first presents a cost model to compare the cost of ownership of DSA and SAQP for a typical front end of line (FEoL) line patterning exercise. Then, we proceed to a feasibility study of using a vertical furnace to batch anneal the block co-polymer for DSA applications. We show that the defect performance of such a batch anneal process is comparable to the process of record anneal methods. This helps in increasing the cost benefit for DSA compared to the conventional multiple patterning approaches.

Crystal growth and annealing for minimized residual stress

DOEpatents

Gianoulakis, Steven E.

2002-01-01

A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF.sub.2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lara-Curzio, Edgar; Rios, Orlando; Marquez-Rossy, Andres Emilio

ORNL collaborated with Faurecia Interior Systems to investigate the feasibility of developing a thermomagnetic preventive maintenance program for nickel tooling used in powder slush molding. It was found that thermal treatments at temperatures greater than 500°C can anneal strain hardening in nickel tooling and a range of temperatures and times for effective thermal annealing were identified. It was also observed that magnetic fields applied during thermal annealing do not alter the kinetics of strain hardening annealing. The results obtained in this investigation provide a foundation for establishing a preventive maintenance program for nickel tooling.

Mitigation of substrate defects in reflective reticles using sequential coating and annealing

DOEpatents

Mirkanimi, Paul B.

2002-01-01

A buffer-layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The buffer-layer is formed by either a multilayer deposited on the substrate or by a plurality of sequentially deposited and annealed coatings deposited on the substrate. The plurality of sequentially deposited and annealed coating may comprise multilayer and single layer coatings. The multilayer deposited and annealed buffer layer coatings may be of the same or different material than the reflecting coating thereafter deposited on the buffer-layer.

Galvanic displacement reaction and rapid thermal annealing in size/shape controlling silver nanoparticles on silicon substrate

NASA Astrophysics Data System (ADS)

Ghosh, Tapas; Satpati, Biswarup

2017-05-01

The effect of the thermal annealing on silver nanoparticles deposited on silicon surface has been studied. The silver nanoparticles have been deposited by the galvanic displacement reaction. Rapid thermal annealing (RTA) has been performed on the Si substrate, containing the silver nanoparticles. The scanning transmission electron microscopy (STEM), energy dispersive X-ray (EDX) spectroscopy and scanning electron microscopy (SEM) study show that the galvanic displacement reaction and subsequent rapid thermal annealing could lead to well separated and spherical shaped larger silver nanoparticles on silicon substrate.

Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.

1980-01-01

Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

Effect of magnetic field annealing on the magneto-elastic properties of nanocrystalline NiFe2O4

NASA Astrophysics Data System (ADS)

Sowmya, N. Shara; Srinivas, A.; Saravanan, P.; Reddy, K. Venu Gopal; Reddy, Monaji Vinitha; Das, Dibakar; Kamat, S. V.

2017-08-01

The effect of magnetic-field annealing on the strain sensitivity (q) and saturation magnetostriction (λs) of NiFe2O4 nanoparticles synthesized by citrate-gel method was investigated. The use of field-annealing resulted in improved magnetoelastic properties at the expense of coercivity. A maximum λs of -40 ppm at 2 kOe, associated with q value of -3.3 ppm/Oe at 5 Oe was achieved in the field-annealed NiFe2O4.

Composition dependent thermal annealing behaviour of ion tracks in apatite

NASA Astrophysics Data System (ADS)

Nadzri, A.; Schauries, D.; Mota-Santiago, P.; Muradoglu, S.; Trautmann, C.; Gleadow, A. J. W.; Hawley, A.; Kluth, P.

2016-07-01

Natural apatite samples with different F/Cl content from a variety of geological locations (Durango, Mexico; Mud Tank, Australia; and Snarum, Norway) were irradiated with swift heavy ions to simulate fission tracks. The annealing kinetics of the resulting ion tracks was investigated using synchrotron-based small-angle X-ray scattering (SAXS) combined with ex situ annealing. The activation energies for track recrystallization were extracted and consistent with previous studies using track-etching, tracks in the chlorine-rich Snarum apatite are more resistant to annealing than in the other compositions.

Band gap and conductivity variations of ZnO nano structured thin films annealed under Vacuum

NASA Astrophysics Data System (ADS)

Vattappalam, Sunil C.; Thomas, Deepu; T, Raju Mathew; Augustine, Simon; Mathew, Sunny

2015-02-01

Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). The samples were annealed under vacuum and conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. All the results were compared with that of the sample annealed under air. It was observed that the band gap decreases and concequently conductivity of the samples increases when the samples are annealed under vacuum.

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

NASA Astrophysics Data System (ADS)

Feigelson, B. N.; Anderson, T. J.; Abraham, M.; Freitas, J. A.; Hite, J. K.; Eddy, C. R.; Kub, F. J.

2012-07-01

No reliable results were reported up-to-date on electrical activation of Mg implanted GaN without co-doping with other ions. The main reason of the poor ion-implanted activation in GaN is lack of the adequate GaN annealing technique. We have developed a new approach, Multicycle Rapid Thermal Annealing to overcome this limitation and enable longer annealing times at high temperature. We have applied this new technique to Mg-implanted GaN, and demonstrated p-type conductivity.

Role of annealing duration on the microstructure and electrochemical performance of β-V2O5 thin films

NASA Astrophysics Data System (ADS)

Jeyalakshmi, K.; Muralidharan, G.

2014-03-01

Vanadium pentoxide thin films have been prepared by sol-gel spin coating method. The eight-layered films coated on fluorine-doped tin oxide substrate and glass substrate were subjected to different durations of annealing under a constant annealing temperature of 300 °C from 30 to 120 min. The X-ray diffraction spectrum reveals crystallinity along (2 0 0) direction. The SEM images of these films show the variation in the surface morphology with increase in annealing duration. The supercapacitor behaviour has been studied using cyclic voltammetry technique and electrochemical impedance spectroscopy. The film annealed for 60 min exhibits a maximum specific capacitance of 346 F/g at a scan rate of 5 mV/s with a charge transfer resistance of 172 Ω.

Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on transistor characteristics

NASA Astrophysics Data System (ADS)

Eom, Tae-Yil; Ahn, Chee-Hong; Kang, Jun-Gu; Saad Salman, Muhammad; Lee, Sun-Young; Kim, Yong-Hoon; Lee, Hoo-Jeong; Kang, Chan-Mo; Kang, Chiwon

2018-06-01

In this study, we show the evolution of nitrogen defects during a sol–gel reaction in flash-lamp-annealed InGaZnO (IGZO) films and their effects on the device characteristics of their thin-film transistors (TFTs). The flash lamp annealing (FLA) of the IGZO TFT for 16 s helps achieve a mobility of approximately 7 cm2 V‑1 s‑1. However, further extension of the annealing time results only in drastic increases in carrier concentration and off-current. The X-ray photoelectron spectroscopy (XPS) analysis of the N 1s peak unravels the presence of oxygen-vacancy-associated nitrogen defects and their evolution with annealing time, which is possibly responsible for the increase in carrier concentration.

Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering

NASA Astrophysics Data System (ADS)

Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping

2013-12-01

Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

Rapid ordering of block copolymer thin films

DOE PAGES

Majewski, Pawel W.; Yager, Kevin G.

2016-08-18

Block-copolymers self-assemble into diverse morphologies, where nanoscale order can be finely tuned via block architecture and processing conditions. However, the ultimate usage of these materials in real-world applications may be hampered by the extremely long thermal annealing times—hours or days—required to achieve good order. Here, we provide an overview of the fundamentals of block-copolymer self-assembly kinetics, and review the techniques that have been demonstrated to influence, and enhance, these ordering kinetics. We discuss the inherent tradeoffs between oven annealing, solvent annealing, microwave annealing, zone annealing, and other directed self-assembly methods; including an assessment of spatial and temporal characteristics. Here, wemore » also review both real-space and reciprocal-space analysis techniques for quantifying order in these systems.« less

Different annealing temperature suitable for different Mg doped P-GaN

NASA Astrophysics Data System (ADS)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

2017-04-01

In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

CO2 laser annealing of 50-microns-thick silicon solar cells

NASA Technical Reports Server (NTRS)

Walker, F. E.

1979-01-01

A test program is conducted to determine thin solar cell annealing effects using a laser energy source. A CO2 continuous-wave laser was used in annealing experiments on 50 micrometers-thick silicon solar cells after proton irradiation. Test cells were irradiated to a fluence of 1.0 x 10 to the 12th power protons/sq cm with 1.9 MeV protons. After irradiation, those cells receiving full proton dosage were degraded by an average of 30% in output power. In annealing tests laser beam exposure times on the solar cell varied from 2 seconds to 16 seconds reaching cell temperatures of from 400 C to 500 C. Under those conditions annealing test results showed recovery in cell output power of from 33% to 90%.

Annealing effect reversal by water sorption-desorption and heating above the glass transition temperature-comparison of properties.

PubMed

Saxena, A; Jean, Y C; Suryanarayanan, R

2013-08-05

Our objective is to compare the physical properties of materials obtained from two different methods of annealing reversal, that is, water sorption-desorption (WSD) and heating above glass transition temperature (HAT). Trehalose was annealed by storing at 100 °C for 120 h. The annealing effect was reversed either by WSD or HAT, and the resulting materials were characterized by differential scanning calorimetry (DSC), water sorption studies, and positron annihilation spectroscopy (PAS). While the products obtained by the two methods of annealing reversal appeared to be identical by conventional characterization methods, they exhibited pronounced differences in their water sorption behavior. Positron annihilation spectroscopy (PAS), by measuring the fractional free volume changes in the processed samples, provided a mechanistic explanation for the differences in the observed behavior.

Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun

The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.

Annealing Effects on Creep and Rupture of Polycrystalline Alumina-Based Fibers

NASA Technical Reports Server (NTRS)

Goldsby, J. C.; Yun, H. M.; Morscher, G. N.; DiCarlo, J. A.

1998-01-01

Continuous-length polycrystalline aluminum-oxide-based fibers are being considered as reinforcements for advanced high-temperature composite materials. For these fine-grained fibers, basic issues arise concerning grain growth and microstructural instability during composite fabrication and the resulting effects on the fiber's thermo-mechanical properties. To examine these issues, commercially available Nextel 610 (alumina) and Altex (alumina-silica) fibers were annealed at 1100 and 1300 C for up to 100 hr in air. Changes in fiber microstructure, fiber tensile creep, stress rupture, and bend stress relaxation (BSR) that occurred with annealing were then determined. BSR tests were also used to compare as-received and annealed fibers to other polycrystalline oxide fibers. Annealing was shown to have a significant effect, particularly on the Altex fiber, and caused it to have increased creep resistance.

Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

2015-10-01

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

Homogenization of CZ Si wafers by Tabula Rasa annealing

NASA Astrophysics Data System (ADS)

Meduňa, M.; Caha, O.; Kuběna, J.; Kuběna, A.; Buršík, J.

2009-12-01

The precipitation of interstitial oxygen in Czochralski grown silicon has been investigated by infrared absorption spectroscopy, chemical etching, transmission electron microscopy and X-ray diffraction after application of homogenization annealing process called Tabula Rasa. The influence of this homogenization step consisting in short time annealing at high temperature has been observed for various temperatures and times. The experimental results involving the interstitial oxygen decay in Si wafers and absorption spectra of SiOx precipitates during precipitation annealing at 1000∘ C were compared with other techniques for various Tabula Rasa temperatures. The differences in oxygen precipitation, precipitate morphology and evolution of point defects in samples with and without Tabula Rasa applied is evident from all used experimental techniques. The results qualitatively correlate with prediction of homogenization annealing process based on classical nucleation theory.

Post annealing effects on the electrical characteristics of pentacene thin film transistors on flexible substrates.

PubMed

Oh, Tae-Yeon; Jeong, Shin Woo; Chang, Seongpil; Park, Jung-Ho; Kim, Jong-Woo; Choi, Kookhyun; Ha, Hyeon-Jun; Hwang, Bo-Yeon; Ju, Byeong-Kwon

2013-05-01

This work studies the effect of post annealing of pentacene on a flexible substrate through the examination of electrical properties and surface morphologies. It is confirmed that the best performance of devices is achieved when the post annealing temperature is 60 degrees C, since the grain size increases, which decrease grain boundaries caused charge transport limit. We can also confirmed the large threshold voltage shift of device annealed at 60 degrees C that means the lower trap density between channel and insulator interface. The device annealed at 60 degrees C exhibits a saturation mobility of 1.99 cm2/V x s, an on/off ratio of 1.87 x 10(4), and a subthreshold slope of 2.5 V/decade.

Analysis and optimization of population annealing

NASA Astrophysics Data System (ADS)

Amey, Christopher; Machta, Jonathan

2018-03-01

Population annealing is an easily parallelizable sequential Monte Carlo algorithm that is well suited for simulating the equilibrium properties of systems with rough free-energy landscapes. In this work we seek to understand and improve the performance of population annealing. We derive several useful relations between quantities that describe the performance of population annealing and use these relations to suggest methods to optimize the algorithm. These optimization methods were tested by performing large-scale simulations of the three-dimensional (3D) Edwards-Anderson (Ising) spin glass and measuring several observables. The optimization methods were found to substantially decrease the amount of computational work necessary as compared to previously used, unoptimized versions of population annealing. We also obtain more accurate values of several important observables for the 3D Edwards-Anderson model.

Structure and microhardness of Al-Si-Cu-Ni alloy after severe plastic deformation and high-temperature annealing

NASA Astrophysics Data System (ADS)

Shvets, Karina; Khalikova, Gulnara; Korznikova, Elena; Trifonov, Vadim

2015-10-01

The effect of severe plastic deformation by high-pressure torsion (HPT) and subsequent annealing on the microstructure and microhardness of squeeze casting Al-22%Si-3%Cu-1.7%Ni alloy was investigated. HPT was performed at room temperature with 5 rotations under the pressure of 4 GPa. Annealing temperature range varied from 300 to 500°C for 5 min. HPT resulted in refinement and partial dissolution of the primary silicon and intermetallic particles in aluminum matrix and structure fragmentation that caused the microhardness increase. Subsequent annealing lead to the decomposition of the supersaturated solid solution that took place simultaneously with recovery and recrystallization of the fragmented structure. Increase of annealing temperature resulted in decrease of microhardness values.

Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ-Pu

DOE PAGES

Olive, D. T.; Booth, C. H.; Wang, D. L.; ...

2016-07-19

The effects on the local structure due to self-irradiation damage of Ga stabilized δ-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and the Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curvemore » have been determined using an amplitude-ratio method, a standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to the previous electrical resistivity- and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Altogether, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals.« less

Thermal annealing evolution to physical properties of ZnS thin films as buffer layer for solar cell applications

NASA Astrophysics Data System (ADS)

Kaushalya; Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

2018-07-01

The conventional CdS window layer in solar cells is found to be hazardous for the environment due to toxic nature of the cadmium. Therefore, in order to seek an alternative, a study on effect of post-annealing treatment on physical properties of e-beam evaporated ZnS thin films has been carried out where films of thickness 150 nm were deposited on glass and indium tin oxide (ITO) substrates. The post annealing treatment was performed in air atmosphere within the temperature range from 100 °C to 500 °C. X-ray diffraction analysis reveals that the films on glass substrate are found to be amorphous at low temperature annealing (≤300 °C) while have α-ZnS hexagonal phase (wurtzite structure) at higher annealing. The patterns also show that the possibility of oxidation is increased significantly at temperature 500 °C which leads to decrease in direct band gap from 3.28 eV to 3.18 eV except films annealed at 300 °C (i.e. 3.39 eV). The maximum transmittance is found about 95% as a result of Doppler blue shift while electrical analysis indicated almost ohmic behavior between current and voltage and surface roughness is increased with post-annealing treatment.

Solvent annealing induced phase separation and dewetting in PMMA∕SAN blend film: film thickness and solvent dependence.

PubMed

You, Jichun; Zhang, Shuangshuang; Huang, Gang; Shi, Tongfei; Li, Yongjin

2013-06-28

The competition between "dewetting" and "phase separation" behaviors in polymer blend films attracts significant attention in the last decade. The simultaneous phase separation and dewetting in PMMA∕SAN [poly(methyl methacrylate) and poly(styrene-ran-acrylonitrile)] blend ultrathin films upon solvent annealing have been observed for the first time in our previous work. In this work, film thickness and annealing solvent dependence of phase behaviors in this system has been investigated using atomic force microscopy and grazing incidence small-angle X-ray scattering (GISAXS). On one hand, both vertical phase separation and dewetting take place upon selective solvent vapor annealing, leading to the formation of droplet∕mimic-film structures with various sizes (depending on original film thickness). On the other hand, the whole blend film dewets the substrate and produces dispersed droplets on the silicon oxide upon common solvent annealing. GISAXS results demonstrate the phase separation in the big dewetted droplets resulted from the thicker film (39.8 nm). In contrast, no period structure is detected in small droplets from the thinner film (5.1 nm and 9.7 nm). This investigation indicates that dewetting and phase separation in PMMA∕SAN blend film upon solvent annealing depend crucially on the film thickness and the atmosphere during annealing.

Thermoluminescence, ESR and x-ray diffraction studies of CaSO4 : Dy phosphor subjected to post preparation high temperature thermal treatment

NASA Astrophysics Data System (ADS)

Bakshi, A. K.; Patwe, S. J.; Bhide, M. K.; Sanyal, B.; Natarajan, V.; Tyagi, A. K.; Kher, R. K.

2008-01-01

Thermoluminescence (TL), electron spin resonance (ESR) and x ray diffraction studies of CaSO4 : Dy phosphor subjected to post preparation high temperature treatment were carried out. Analysis of the TL glow curve indicated that the dosimetric glow peak at 240 °C reduces, whereas the low temperature satellite peak increases with the increase in the annealing temperature in the range 650-1000 °C. The influence of the annealing atmosphere on the TL glow curve structure was also observed. Reduction of the photoluminescence intensity of the annealed phosphor indicated that the environment of Dy3+ ions might have undergone some change due to high temperature treatment. Reduction in the ESR signal intensity corresponding to O_{3}^{-} and SO_{3}^{-} radicals was observed initially with the increase in the annealing temperaure; subsequently their intensity increased with temperature. Signals due to the SO_{4}^{-} radical vanished, when the phosphor was annealed beyond 800 °C. A signal corresponding to SH2- radicals was also observed in the ESR spectra for samples subjected to annealing in the temperature regime 800-1000 °C. XRD of the in situ annealed phosphor showed a change in the unit cell parameters. An endothermic peak at 860 °C in the DTA spectrum was observed.

Effect of thermal annealing on the structural and optical properties of tris-(8-hydroxyquinoline)aluminum(III) (Alq3 ) films.

PubMed

Cuba, M; Muralidharan, G

2015-05-01

Tris-(8-hydroxyquionoline)aluminum (Alq3 ) was synthesized and coated on to a glass substrate using the dip coating method. The structural and optical properties of the Alq3 film after thermal annealing from 50°C to 300°C in 50° steps was studied. The films have been prepared with 2 to 16 layers (42-324 nm). The thickness and thermal annealing of Alq3 films were optimized for maximum luminescence yield. The Fourier transform infrared spectrum confirms the formation of quinoline with absorption in the region 700 - 500/cm. Partial sublimation and decomposition of quinoline ion was observed with the Alq3 films annealed at 300°C. The X-ray diffraction pattern of the Alq3 film annealed at 50°C to 150°C reveals the amorphous nature of the films. The Alq3 film annealed above 150°C were crystalline nature. Film annealed at 150°C exhibits a photoluminescence intensity maximum at 512 nm when excited at 390 nm. The Alq3 thin film deposited with 10 layers (220 nm) at 150°C exhibited maximum luminescence yield. Copyright © 2014 John Wiley & Sons, Ltd.

Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ-Pu

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olive, D. T.; Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545; Wang, D. L.

2016-07-21

The effects on the local structure due to self-irradiation damage of Ga stabilized δ-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and the Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curve havemore » been determined using an amplitude-ratio method, a standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to the previous electrical resistivity- and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Together, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals.« less

Controlling the Pore Size of Mesoporous Carbon Thin Films through Thermal and Solvent Annealing.

PubMed

Zhou, Zhengping; Liu, Guoliang

2017-04-01

Herein an approach to controlling the pore size of mesoporous carbon thin films from metal-free polyacrylonitrile-containing block copolymers is described. A high-molecular-weight poly(acrylonitrile-block-methyl methacrylate) (PAN-b-PMMA) is synthesized via reversible addition-fragmentation chain transfer (RAFT) polymerization. The authors systematically investigate the self-assembly behavior of PAN-b-PMMA thin films during thermal and solvent annealing, as well as the pore size of mesoporous carbon thin films after pyrolysis. The as-spin-coated PAN-b-PMMA is microphase-separated into uniformly spaced globular nanostructures, and these globular nanostructures evolve into various morphologies after thermal or solvent annealing. Surprisingly, through thermal annealing and subsequent pyrolysis of PAN-b-PMMA into mesoporous carbon thin films, the pore size and center-to-center spacing increase significantly with thermal annealing temperature, different from most block copolymers. In addition, the choice of solvent in solvent annealing strongly influences the block copolymer nanostructure and the pore size of mesoporous carbon thin films. The discoveries herein provide a simple strategy to control the pore size of mesoporous carbon thin films by tuning thermal or solvent annealing conditions, instead of synthesizing a series of block copolymers of various molecular weights and compositions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of annealing temperature and dopant concentration on the thermoluminescence sensitivity in LiF:Mg,Cu,Ag material.

PubMed

Yahyaabadi, Akram; Torkzadeh, Falamarz; Rezaei Ochbelagh, Dariush; Hosseini Pooya, Seyed Mahdi

2018-04-24

LiF:Mg,Cu,Ag is a new dosimetry material that is similar to LiF:Mg,Cu,P in terms of dosimetric properties. The effect of the annealing temperature in the range of 200 to 350°C on the thermoluminescence (TL) sensitivity and the glow curve structure of this material at different concentrations of silver (Ag) was investigated. It has been demonstrated that the optimum values of the annealing temperature and the Ag concentration are 240°C and 0.1 mol% for better sensitivity, respectively. The TL intensity decreases at annealing temperatures lower than 240°C or higher than 240°C, reaching a minimum at 300°C and then again increases for various Ag concentrations. It was observed that the glow curve structure altered and the area under the low temperature peak as well as the area under the main dosimetric peak decreased with increasing annealing temperature. The position of the main dosimetric peak moved in the direction of higher temperatures, but at 320 and 350°C annealing temperatures, it shifted to lower temperatures. It was also observed that the TL sensitivity could partially be recovered by a combined annealing procedure. Copyright © 2018 John Wiley & Sons, Ltd.

Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

PubMed

Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

2014-01-01

Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

PubMed

Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

2014-10-14

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

Enhanced reactivity of nanoscale iron particles through a vacuum annealing process

NASA Astrophysics Data System (ADS)

Riba, Olga; Barnes, Robert J.; Scott, Thomas B.; Gardner, Murray N.; Jackman, Simon A.; Thompson, Ian P.

2011-10-01

A reactivity study was undertaken to compare and assess the rate of dechlorination of chlorinated aliphatic hydrocarbons (CAHs) by annealed and non-annealed nanoscale iron particles. The current study aims to resolve the uncertainties in recently published work studying the effect of the annealing process on the reduction capability of nanoscale Fe particles. Comparison of the normalized rate constants (m2/h/L) obtained for dechlorination reactions of trichloroethene (TCE) and cis-1,2-dichloroethene (cis-1,2-DCE) indicated that annealing nanoscale Fe particles increases their reactivity 30-fold. An electron transfer reaction mechanism for both types of nanoscale particles was found to be responsible for CAH dechlorination, rather than a reduction reaction by activated H2 on the particle surface (i.e., hydrogenation, hydrogenolysis). Surface analysis of the particulate material using X-ray diffraction (XRD) and transmission electron microscopy (TEM) together with surface area measurement by Brunauer, Emmett, Teller (BET) indicate that the vacuum annealing process decreases the surface area and increases crystallinity. BET surface area analysis recorded a decrease in nanoscale Fe particle surface area from 19.0 to 4.8 m2/g and crystallite dimensions inside the particle increased from 8.7 to 18.2 nm as a result of annealing.

Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography

PubMed Central

2013-01-01

Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography. PMID:24215718

Effects of Pnictogen Atmosphere Annealing on Fe1+yTe0.6Se0.4

NASA Astrophysics Data System (ADS)

Yamada, Tatsuhiro; Sun, Yue; Pyon, Sunseng; Tamegai, Tsuyoshi

2016-02-01

It has been clarified that bulk superconductivity in Fe1+yTe0.6Se0.4 can be induced by annealing in an appropriate atmosphere to remove the harmful effects of excess iron. In order to clarify the details of the annealing process, we studied the changes in the physical properties and reaction products of Fe1+yTe0.6Se0.4 annealed in pnictogen (P, As, Sb) atmospheres. Crystals annealed in a pnictogen atmosphere show bulk superconductivity and the values of Tc and Jc are about 14 K and (2-4) × 105 A/cm2 (2 K, self-field), respectively. It is also found that the reaction rate increases with the increase in the saturated vapor pressure of the pnictogen. Unexpectedly, the reaction products of Fe1+yTe0.6Se0.4 after annealing in a P atmosphere mainly consist of FeTe2. In addition, the amount of P required to obtain the optimal Tc is much smaller than the amount of excess iron, which is similar to the case of oxygen annealing. P, oxygen, and to some extent As could serve as catalysts to form FeTe2 to remove excess iron.

Electron-spectroscopy and -diffraction study of the conductivity of CVD diamond ( 0 0 1 )2×1 surface

NASA Astrophysics Data System (ADS)

Kono, S.; Takano, T.; Shimomura, M.; Goto, T.; Sato, K.; Abukawa, T.; Tachiki, M.; Kawarada, H.

2003-04-01

A chemical vapor deposition as-grown diamond (0 0 1) single-domain 2 × 1 surface was studied by electron-spectroscopy and electron-diffraction in ultrahigh vacuum (UHV). In order to change the surface conductivity (SC) of the diamond in UHV, three annealing stages were used; without annealing, annealing at 300 °C and annealing at 550 °C. From low energy electron diffraction and X-ray photoelectron spectroscopic (XPS) studies, an existence of SC was suggested for the first two stages of annealing and an absence of SC was suggested for the last stage of annealing. Changes in C KVV Auger electron spectroscopic spectra, C KVV Auger electron diffraction (AED) patterns and C 1s XPS peak positions were noticed between the annealing stages at 300 and 550 °C. These changes are interpreted as such that the state of hydrogen involvement in a subsurface of diamond (0 0 1)2 × 1 changes as SC changes. In particular, the presence of local disorder in diamond configuration in SC subsurface is pointed out from C KVV AED. From C 1s XPS peak shifts, a lower bound for the Fermi-level for SC layers from the valence band top is presented to be ˜0.5 eV.

The role of nickel addition and annealing temperature on ion storage performance of nanostructured nickel ferrite thin films

NASA Astrophysics Data System (ADS)

Bazhan, Z.; Ghodsi, F. E.; Mazloom, J.

2016-10-01

The sol-gel spin-coated nickel ferrite (NF), NiFe2O4, thin films were synthesised and the effect of annealing temperature and compositional ratio on different properties of samples were investigated. Electrochemical performance of the films was measured in the presence of KOH and LiClO4/PC electrolyte. Generally, addition of nickel increases the current density. The NF thin films with molar ratio of 0.5 and annealed at 400 °C have the highest charge density value and the highest capacitance in both electrolytes. Annealing temperature had significant effect on electrochemical properties of NF thin films and the diffusion coefficient enhanced by increasing the annealing temperature. X-ray diffraction patterns of prepared samples showed the rhombohedral structure, hematite phase (α-Fe2O3), of iron oxide sample and the presence of inverse spinel structure confirms the formation of NF. Field emission scanning electron microscopy images revealed that the morphology of films changes from larvae shape to granular structure by nickel incorporation and the grain size increased by raising the annealing temperature. The absorption edge of the hematite shift to higher wavelength by annealing and nickel incorporation and band gap narrowing has been occurred.

Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature

PubMed Central

2014-01-01

Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications. PMID:25520589

The effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

NASA Astrophysics Data System (ADS)

Wang, Cai-Feng; Li, Qing-Shan; Hu, Bo; Li, Wei-Bing

2009-06-01

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I-V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I-V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.

Glass transition dynamics of stacked thin polymer films

NASA Astrophysics Data System (ADS)

Fukao, Koji; Terasawa, Takehide; Oda, Yuto; Nakamura, Kenji; Tahara, Daisuke

2011-10-01

The glass transition dynamics of stacked thin films of polystyrene and poly(2-chlorostyrene) were investigated using differential scanning calorimetry and dielectric relaxation spectroscopy. The glass transition temperature Tg of as-stacked thin polystyrene films has a strong depression from that of the bulk samples. However, after annealing at high temperatures above Tg, the stacked thin films exhibit glass transition at a temperature almost equal to the Tg of the bulk system. The α-process dynamics of stacked thin films of poly(2-chlorostyrene) show a time evolution from single-thin-film-like dynamics to bulk-like dynamics during the isothermal annealing process. The relaxation rate of the α process becomes smaller with increase in the annealing time. The time scale for the evolution of the α dynamics during the annealing process is very long compared with that for the reptation dynamics. At the same time, the temperature dependence of the relaxation time for the α process changes from Arrhenius-like to Vogel-Fulcher-Tammann dependence with increase of the annealing time. The fragility index increases and the distribution of the α-relaxation times becomes smaller with increase in the annealing time for isothermal annealing. The observed change in the α process is discussed with respect to the interfacial interaction between the thin layers of stacked thin polymer films.

Error suppression and correction for quantum annealing

NASA Astrophysics Data System (ADS)

Lidar, Daniel

While adiabatic quantum computing and quantum annealing enjoy a certain degree of inherent robustness against excitations and control errors, there is no escaping the need for error correction or suppression. In this talk I will give an overview of our work on the development of such error correction and suppression methods. We have experimentally tested one such method combining encoding, energy penalties and decoding, on a D-Wave Two processor, with encouraging results. Mean field theory shows that this can be explained in terms of a softening of the closing of the gap due to the energy penalty, resulting in protection against excitations that occur near the quantum critical point. Decoding recovers population from excited states and enhances the success probability of quantum annealing. Moreover, we have demonstrated that using repetition codes with increasing code distance can lower the effective temperature of the annealer. References: K.L. Pudenz, T. Albash, D.A. Lidar, ``Error corrected quantum annealing with hundreds of qubits'', Nature Commun. 5, 3243 (2014). K.L. Pudenz, T. Albash, D.A. Lidar, ``Quantum annealing correction for random Ising problems'', Phys. Rev. A. 91, 042302 (2015). S. Matsuura, H. Nishimori, T. Albash, D.A. Lidar, ``Mean Field Analysis of Quantum Annealing Correction''. arXiv:1510.07709. W. Vinci et al., in preparation.

Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nirwal, Varun Singh, E-mail: varun.nirwal30@gmail.com; Singh, Joginder; Gautam, Khyati

2016-05-06

We studied effect of thermally annealed GaN surface on the electrical and structural properties of (Pd/Au) Schottky contact to Ga-polar GaN grown by molecular beam epitaxy on Si substrate. Current voltage (I-V) measurement was used to study electrical properties while X-ray diffraction (XRD) measurement was used to study structural properties. The Schottky barrier height calculated using I-V characteristics was 0.59 eV for (Pd/Au) Schottky contact on as grown GaN, which increased to 0.73 eV for the Schottky contact fabricated on 700 °C annealed GaN film. The reverse bias leakage current at -1 V was also significantly reduced from 6.42×10{sup −5} Amore » to 7.31×10{sup −7} A after annealing. The value of series resistance (Rs) was extracted from Cheung method and the value of R{sub s} decreased from 373 Ω to 172 Ω after annealing. XRD results revealed the formation of gallide phases at the interface of (Pd/Au) and GaN for annealed sample, which could be the reason for improvement in the electrical properties of Schottky contact after annealing.« less

Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

NASA Astrophysics Data System (ADS)

Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol; An, Tae Kyu; Nam, Sooji; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

2017-08-01

Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlOx) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlOx thin film at 180 °C was comparable to that of AlOx thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlOx thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10-7 A/cm2 at 2 MV/cm). Finally, we confirmed that a dense AlOx thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlOx thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m-2 day-1 (25 °C, 50% relative humidity) and 0.26 g m-2 day-1, respectively.

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

NASA Astrophysics Data System (ADS)

Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Tadjer, Marko J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.

2014-08-01

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N2 overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E2 and A1 (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.

Vanishing Act: Experiments on Fission Track Annealing in Monazite

NASA Astrophysics Data System (ADS)

Shipley, N. K.; Fayon, A. K.

2006-12-01

To determine the viability of monazite as a low temperature thermochronometer, we conducted fission track annealing experiments under isothermal conditions. These experiments evaluated the effects of uranium concentration and zoning on annealing rates. Fission track annealing rates in monazite were also compared to those in Durango apatite. Preliminary results indicate that monazite grains with higher initial track densities anneal at faster rates than those with low initial densities and that fission tracks in monazite anneal at a faster rate than those in apatite. Monazite sand grains were selected from a placer sand deposit, mounted in teflon, and polished. Grains were imaged with electron backscattering to characterize zoning patterns and variations in uranium concentration. Monazite grain mounts were etched in boiling 37% HCl for 50 minutes and fission track densities were determined using standard fission track counting techniques. Durango apatite was etched in 5N HNO3 at room temperature for 20 seconds. After the initial track densities were determined, mounts in one group were annealed at 150 ° C for 1to 6 h. The mounts in a second group were annealed at 200 ° C for 2 hour periods along with mounts of Durango apatite grains. All grains were re-polished prior to each anneal. Upon completion of the experiment, backscatter images were taken of grains from which fission track counts were obtained to verify continuance of concentric zoning. Results of these experiments indicate that annealing rates of fission tracks in monazite vary as a function of uranium concentration. Uranium concentration was constrained on the basis of zoning patterns obtained from electron backscatter images. Fission track densities in grains with initial track densities of approximately 2.4 × 106 tracks/cm2 were reduced at average rate of 16% every two hours. In contrast, track densities in grains with initial track densities of approximately 1.6 × 106 tracks/cm2 average 4.6% density reduction every two hours. In both cases, track density reduction in monazite was faster than the rate of 0.1 % every two hours obtained for apatite. This would indicate that fission track annealing occurs at a lower temperature in monazite than in apatite. Thus monazite would be useful as a low temperature chronometer for determining cooling histories in recently exhumed rocks.

Defect evolution and its impact on the ferromagnetism of Cu-doped ZnO nanocrystals upon thermal treatment: A positron annihilation study

NASA Astrophysics Data System (ADS)

Chen, Zhi-Yuan; Chen, Yuqian; Zhang, Q. K.; Qi, N.; Chen, Z. Q.; Wang, S. J.; Li, P. H.; Mascher, P.

2017-01-01

CuO/ZnO nanocomposites with 4 at. % CuO were annealed in air at various temperatures between 100 and 1200 °C to produce Cu-doped ZnO nanocrystals. X-ray diffraction shows that a CuO phase can be observed in the CuO/ZnO nanocomposites annealed at different temperatures, and the Cu-doped ZnO nanocrystals are identified to be of wurtzite structure. The main peak (101) appears at slightly lower diffraction angles with increasing annealing temperature from 400 up to 1200 °C, which confirms the successful doping of Cu into the ZnO lattice above 400 °C. Scanning electron microscopy indicates that most particles in the CuO/ZnO nanocomposites are isolated when annealing at 100-400 °C, but these particles have a tendency to form clusters or aggregates as the annealing temperature increases from 700 to 1000 °C. Positron annihilation measurements reveal a large number of vacancy defects in the interface region of the nanocomposites, and they are gradually recovered with increasing annealing temperature up to 1000 °C. Room-temperature ferromagnetism can be observed in the CuO/ZnO nanocomposites, and the magnetization decreases continuously with increasing annealing temperature. However, there may be several different origins of ferromagnetism in the CuO/ZnO nanocomposites. At low annealing temperatures, the ferromagnetism originates from the CuO nanograins, and the ferromagnetism of CuO nanograins decreases with an increase in the grain size after subsequent higher temperature annealing, which leads to the weakening of ferromagnetism in the CuO/ZnO nanocomposites. After annealing from 400 to 1000 °C, the ferromagnetism gradually vanishes. The ferromagnetism is probably induced by Cu substitution but is mediated by vacancy defects in the CuO/ZnO nanocomposites. The disappearance of ferromagnetism coincides well with the recovery of vacancy defects. It can be inferred that the ferromagnetism is mediated by vacancy defects that are distributed in the interface region.

Spontaneous magnetization of quantum XY spin model in joint presence of quenched and annealed disorder

NASA Astrophysics Data System (ADS)

Bera, Anindita; Rakshit, Debraj; SenDe, Aditi; Sen, Ujjwal

2017-06-01

We investigate equilibrium statistical properties of the isotropic quantum XY spin-1/2 model in an external magnetic field when the interaction and field parts are subjected to quenched or annealed disorder or both. The randomness present in the system are termed annealed or quenched depending on the relation between two different time scales—the time scale associated with the equilibration of the randomness and the time of observation. Within a mean-field framework, we study the effects of disorders on spontaneous magnetization, both by perturbative and numerical techniques. Our primary interest is to understand the differences between quenched and annealed cases, and also to investigate the interplay when both of them are present in a system. We find that the magnetization survives in the presence of a unidirectional random field, irrespective of its nature, i.e., whether it is quenched or annealed. However, the field breaks the circular symmetry of the magnetization, and the system magnetizes in specific directions, parallel or transverse to the applied magnetic field. Interestingly, while the transverse magnetization is affected by the annealed disordered field, the parallel one remains unfazed by the same. Moreover, the annealed disorder present in the interaction term does not affect the system's spontaneous magnetization and the corresponding critical temperature, irrespective of the presence or absence of quenched or annealed disorder in the field term. We carry out a comparative study of these and all other different combinations of the disorders in the interaction and field terms, and point out their generic features.

Effect of post-irradiation annealing on the irradiated microstructure of neutron-irradiated 304L stainless steel

NASA Astrophysics Data System (ADS)

Jiao, Z.; Hesterberg, J.; Was, G. S.

2018-03-01

Post-irradiation annealing was performed on a 304L SS that was irradiated to 5.9 dpa in the Barsebäck 1 BWR reactor. Evolution of dislocation loops, radiation-induced solute clusters and radiation-induced segregation at the grain boundary was investigated following thermal annealing at 500 °C and 550 °C up to 20 h. Dislocation loops, Ni-Si and Al-Cu clusters, and enrichment of Ni, Si and depletion of Cr at the grain boundary were observed in the as-irradiated condition. Dislocation loop size did not change significantly after annealing at 550 °C for 5 h but the loop number density decreased considerably and loops mostly disappeared after annealing at 550 °C for 20 h. The average size of Ni-Si and Al-Cu clusters increased while the number density decreased with annealing. The increase in cluster size was due to diffusion of solutes rather than cluster coarsening. Significant volume fractions of Ni-Si and Al-Cu clusters still remained after annealing at 550 °C for 20 h. Substantial recovery of Cr and Ni at the grain boundary was observed after annealing at 550 °C for 5 h but neither Cr nor Ni was fully recovered after 20 h. Annihilation of dislocation loops, driven by the thermal vacancy concentration gradient caused by the strain field and stacking fault associated with the loops appeared to be faster than annihilation of solute clusters and recovery of Ni and Si at the grain boundary, both of which are driven by the solute concentration gradients.

Understanding the phase formation kinetics of nano-crystalline kesterite deposited on mesoscopic scaffolds via in situ multi-wavelength Raman-monitored annealing.

PubMed

Wang, Zhuoran; Elouatik, Samir; Demopoulos, George P

2016-10-26

Kesterite, a highly promising photo-absorbing crystalline form of Cu 2 ZnSnS 4 (CZTS), has been prepared via various routes. However, the lack of in-depth understanding of the dynamic phase formation process of kesterite leads to difficulties in optimizing its annealing conditions, hence its light harvesting performance. In this paper, in situ Raman monitored-annealing is applied to study the phase formation kinetics of nano-crystalline kesterite from a precursor deposited on a TiO 2 mesoscopic scaffold. By performing in situ Raman annealing under different experimental conditions and wavelengths, several facts have been discovered: kesterite crystallization starts at as low as 170 °C, but after short time annealing at 300 °C followed by cooling, the initially formed kesterite is found to decompose. Annealing at 400 °C or higher is proven to be sufficient for stabilizing the kesterite phase. Annealing at the higher temperature of 500 °C is necessary though to promote a complete reaction and thus eliminate the parasitic copper tin sulfide (CTS) impurity intermediates identified at lower annealing temperatures. More importantly, the real-time temperature dependence of Raman peak intensity enhancement, shift and broadening for CZTS is established experimentally at 500 °C for 1 h, providing a valuable reference in future CZTS research. This work demonstrates the significance of using in situ Raman spectroscopy in elucidating the kesterite phase formation kinetics, a critical step towards full crystal phase control - a prerequisite for developing fully functional CZTS-based optoelectronic devices.

Through-vial impedance spectroscopy of the mechanisms of annealing in the freeze-drying of maltodextrin: the impact of annealing hold time and temperature on the primary drying rate.

PubMed

Smith, Geoff; Arshad, Muhammad Sohail; Polygalov, Eugene; Ermolina, Irina

2014-06-01

The study aims to investigate the impact of annealing hold time and temperature on the primary drying rate/duration of a 10% (w/v) solution of maltodextrin with an emphasis on how the mechanisms of annealing might be understood from the in-vial measurements of the ice crystal growth and the glass transition. The electrical impedance of the solution within a modified glass vial was recorded between 10 and 10(6) Hz during freeze-drying cycles with varying annealing hold times (1-5 h) and temperatures. Primary drying times decreased by 7%, 27% and 34% (1.1, 4.3 and 5.5 h) with the inclusion of an annealing step at temperatures of -15°C, -10°C and -5°C, respectively. The glass transition was recorded at approximately -16°C during the re-heating and re-cooling steps, which is close to the glass transition (Tg ') reported for 10% (w/v) maltodextrin and therefore indicates that a maximum freeze concentration (∼86%, w/w, from the Gordon-Taylor equation) was achieved during first freezing, with no further ice being formed on annealing. This observation, coupled to the decrease in electrical resistance that was observed during the annealing hold time, suggests that the reduction in the drying time was because of improved connectivity of ice crystals because of Ostwald ripening rather than devitrification. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment

NASA Astrophysics Data System (ADS)

Jallorina, Michael Paul A.; Bermundo, Juan Paolo S.; Fujii, Mami N.; Ishikawa, Yasuaki; Uraoka, Yukiharu

2018-05-01

Transparent amorphous oxide semiconducting materials such as amorphous InGaZnO used in thin film transistors (TFTs) are typically annealed at temperatures higher than 250 °C to remove any defects present and improve the electrical characteristics of the device. Previous research has shown that low cost and low temperature methods improve the electrical characteristics of the TFT. With the aid of surface and bulk characterization techniques in comparison to the device characteristics, this work aims to elucidate further on the improvement mechanisms of wet and dry annealing ambients that affect the electrical characteristics of the device. Secondary Ion Mass Spectrometry results show that despite outward diffusion of -H and -OH species, humid annealing ambients counteract outward diffusion of these species, leading to defect sites which can be passivated by the wet ambient. X-ray Photoelectron Spectroscopy results show that for devices annealed for only 30 min in a wet annealing environment, the concentration of metal-oxide bonds increased by as much as 21.8% and defects such as oxygen vacancies were reduced by as much as 18.2% compared to an unannealed device. Our work shows that due to the oxidizing power of water vapor, defects are reduced, and overall electrical characteristics are improved as evidenced with the 150 °C wet O2, 30 min annealed sample which exhibited the highest mobility of 5.00 cm2/V s, compared to 2.36 cm2/V s for a sample that was annealed at 150 °C in a dry ambient atmospheric environment for 2 h.

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

NASA Astrophysics Data System (ADS)

O'Brien, April; Villegas, Brendon; Gu, J. Y.

2009-01-01

Magnesium diboride (MgB 2) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB 2 thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature ( Tc), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest Tc of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate ( Ts) increased, Tc rose. However, the maximum Ts was limited due to the low magnesium sticking coefficient and thus the Tc value was limited as well. The highest Tc, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low Tc, did not have the well-developed MgB 2 grains while the films with higher Tc displayed the well-developed grains and smooth surface. Although the Tc of sputtered MgB 2 films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB 2 heterostructures using rather simple physical vapor deposition method such as sputtering.

Direct and pulsed current annealing of p-MOSFET based dosimeter: the "MOSkin".

PubMed

Alshaikh, Sami; Carolan, Martin; Petasecca, Marco; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly

2014-06-01

Contemporary radiation therapy (RT) is complicated and requires sophisticated real-time quality assurance (QA). While 3D real-time dosimetry is most preferable in RT, it is currently not fully realised. A small, easy to use and inexpensive point dosimeter with real-time and in vivo capabilities is an option for routine QA. Such a dosimeter is essential for skin, in vivo or interface dosimetry in phantoms for treatment plan verification. The metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector is one of the best choices for these purposes, however, the MOSFETs sensitivity and its signal stability degrade after essential irradiation which limits its lifespan. The accumulation of positive charge on the gate oxide and the creation of interface traps near the silicon-silicon dioxide layer is the primary physical phenomena responsible for this degradation. The aim of this study is to investigate MOSFET dosimeter recovery using two proposed annealing techniques: direct current (DC) and pulsed current (PC), both based on hot charged carrier injection into the gate oxide of the p-MOSFET dosimeter. The investigated MOSFETs were reused multiple times using an irradiation-annealing cycle. The effect of the current-annealing parameters was investigated for the dosimetric characteristics of the recovered MOSFET dosimeters such as linearity, sensitivity and initial threshold voltage. Both annealing techniques demonstrated excellent results in terms of maintaining a stable response, linearity and sensitivity of the MOSFET dosimeter. However, PC annealing is more preferable than DC annealing as it offers better dose response linearity of the reused MOSFET and has a very short annealing time.

Ultrafast Flame Annealing of TiO2 Paste for Fabricating Dye-Sensitized and Perovskite Solar Cells with Enhanced Efficiency.

PubMed

Kim, Jung Kyu; Chai, Sung Uk; Cho, Yoonjun; Cai, Lili; Kim, Sung June; Park, Sangwook; Park, Jong Hyeok; Zheng, Xiaolin

2017-11-01

Mesoporous TiO 2 nanoparticle (NP) films are broadly used as electrodes in photoelectrochemical cells, dye-sensitized solar cells (DSSCs), and perovskite solar cells (PSCs). State-of-the-art mesoporous TiO 2 NP films for these solar cells are fabricated by annealing TiO 2 paste-coated fluorine-doped tin oxide glass in a box furnace at 500 °C for ≈30 min. Here, the use of a nontraditional reactor, i.e., flame, is reported for the high throughput and ultrafast annealing of TiO 2 paste (≈1 min). This flame-annealing method, compared to conventional furnace annealing, exhibits three distinct benefits. First, flame removes polymeric binders in the initial TiO 2 paste more completely because of its high temperature (≈1000 °C). Second, flame induces strong interconnections between TiO 2 nanoparticles without affecting the underlying transparent conducting oxide substrate. Third, the flame-induced carbothermic reduction on the TiO 2 surface facilitates charge injection from the dye/perovskite to TiO 2 . Consequently, when the flame-annealed mesoporous TiO 2 film is used to fabricate DSSCs and PSCs, both exhibit enhanced charge transport and higher power conversion efficiencies than those fabricated using furnace-annealed TiO 2 films. Finally, when the ultrafast flame-annealing method is combined with a fast dye-coating method to fabricate DSSC devices, its total fabrication time is reduced from over 3 h to ≈10 min. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

PubMed Central

Ye, Chao; Ran, Guang; Zhou, Wei; Shen, Qiang; Feng, Qijie; Lin, Jianxin

2017-01-01

Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson–Mehl–Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time. PMID:29068408

78 FR 75371 - Diffusion-Annealed, Nickel-Plated Flat-Rolled Steel Products From Japan; Scheduling of the Final...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-12-11

...-Plated Flat-Rolled Steel Products From Japan; Scheduling of the Final Phase of an Antidumping... imports from Japan of diffusion-annealed, nickel- plated flat-rolled steel products, provided for... diffusion-annealed, nickel- plated flat-rolled steel products from Japan are being sold in the United States...

SAGRAD: A Program for Neural Network Training with Simulated Annealing and the Conjugate Gradient Method.

PubMed

Bernal, Javier; Torres-Jimenez, Jose

2015-01-01

SAGRAD (Simulated Annealing GRADient), a Fortran 77 program for computing neural networks for classification using batch learning, is discussed. Neural network training in SAGRAD is based on a combination of simulated annealing and Møller's scaled conjugate gradient algorithm, the latter a variation of the traditional conjugate gradient method, better suited for the nonquadratic nature of neural networks. Different aspects of the implementation of the training process in SAGRAD are discussed, such as the efficient computation of gradients and multiplication of vectors by Hessian matrices that are required by Møller's algorithm; the (re)initialization of weights with simulated annealing required to (re)start Møller's algorithm the first time and each time thereafter that it shows insufficient progress in reaching a possibly local minimum; and the use of simulated annealing when Møller's algorithm, after possibly making considerable progress, becomes stuck at a local minimum or flat area of weight space. Outlines of the scaled conjugate gradient algorithm, the simulated annealing procedure and the training process used in SAGRAD are presented together with results from running SAGRAD on two examples of training data.

Cyclic Solvent Vapor Annealing for Rapid, Robust Vertical Orientation of Features in BCP Thin Films

NASA Astrophysics Data System (ADS)

Paradiso, Sean; Delaney, Kris; Fredrickson, Glenn

2015-03-01

Methods for reliably controlling block copolymer self assembly have seen much attention over the past decade as new applications for nanostructured thin films emerge in the fields of nanopatterning and lithography. While solvent assisted annealing techniques are established as flexible and simple methods for achieving long range order, solvent annealing alone exhibits a very weak thermodynamic driving force for vertically orienting domains with respect to the free surface. To address the desire for oriented features, we have investigated a cyclic solvent vapor annealing (CSVA) approach that combines the mobility benefits of solvent annealing with selective stress experienced by structures oriented parallel to the free surface as the film is repeatedly swollen with solvent and dried. Using dynamical self-consistent field theory (DSCFT) calculations, we establish the conditions under which the method significantly outperforms both static and cyclic thermal annealing and implicate the orientation selection as a consequence of the swelling/deswelling process. Our results suggest that CSVA may prove to be a potent method for the rapid formation of highly ordered, vertically oriented features in block copolymer thin films.

High-fluence Ga-implanted silicon-The effect of annealing and cover layers

NASA Astrophysics Data System (ADS)

Fiedler, J.; Heera, V.; Hübner, R.; Voelskow, M.; Germer, S.; Schmidt, B.; Skorupa, W.

2014-07-01

The influence of SiO2 and SiNx cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750 °C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20 ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900 °C. However, in this case, Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiOx grown during annealing which only can be avoided by the usage of SiNx cover layers.

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

PubMed

Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

2016-04-27

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

Photo-response behavior of organic transistors based on thermally annealed semiconducting diketopyrrolopyrrole core

NASA Astrophysics Data System (ADS)

Tarsoly, Gergely; Pyo, Seungmoon

2018-06-01

We report the opto-electrical response of organic field-effect transistors based on a thin-film of a semiconducting diketopyrrolopyrrole (DPP) core, a popular building block for molecular semiconductors, and a polymeric gate dielectric. The thin-film of the DPP core was thermally annealed at different temperatures under N2 atmosphere to investigate the relationship between the annealing temperature and the electrical properties of the device. The results showed that the annealing process induces morphological changes in the thin film, and properly controlling the thermal annealing conditions can enhance the device performance. In addition, we also investigated in detail the photo-response behaviors by analyzing the responsivity (R) of the device with the optimally annealed DPP-core thin film under two light illumination conditions by considering the irradiance absorbed by the thin film instead of the total irradiance of the light source. We found that the proposed model could lead to a light-source-independent description of the photo-response behavior of the device, and which can be used for other applications.

Study of annealing effect on the growth of ZnO nanorods on ZnO seed layers

NASA Astrophysics Data System (ADS)

Sannakashappanavar, Basavaraj S.; Pattanashetti, Nandini A.; Byrareddy, C. R.; Yadav, Aniruddh Bahadur

2018-04-01

A zinc oxide (ZnO) seed layer was deposited on the SiO2/Si substrate by RF sputtering. To study the effect of annealing, the seed layers were classified into annealed and unannealed thin films. Annealing of the seed layers was carried at 450°C. Surface morphology of the seed layers were studied by Atomic force microscopy. ZnO nanorods were then grown on both the types of seed layer by hydrothermal method. The morphology and the structural properties of the nanorods were characterized by X-ray diffraction and Scanning electron microscopy. The effect of seed layer annealing on the growth and orientation of the ZnO nanorods were clearly examined on comparing with the nanorods grown on unannealed seed layer. The nanorods grown on annealed seed layers were found to be well aligned and oriented. Further, the I-V characteristic study was carried out on these aligned nanorods. The results supports positively for the future work to further enhance the properties of developed nanorods for their wide applications in electronic and optoelectronic devices.

MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

PubMed Central

Chambon, Sylvain; Derue, Lionel; Lahaye, Michel; Pavageau, Bertrand; Hirsch, Lionel; Wantz, Guillaume

2012-01-01

Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8%) and that increasing the thickness up to 15 nm does not change the device performance.

Atmospheric heating of meteorites: Results from nuclear track studies

NASA Technical Reports Server (NTRS)

Jha, R.

1984-01-01

A quantitative model to estimate the degree of annealing of nuclear tracks in mineral grains subjected to a variable temperature history was proposed. This model is applied to study the track annealing records in different meteorites resulting from their atmospheric heating. Scale lengths were measured of complete and partial track annealing, delta X sub 1 and delta X sub 2, respectively. In mineral grain close to fusion crust in about a dozen meteorites. Values of delta X sub 1 and delta X sub 2 depend on extent and duration of heating during atmospheric transit and hence on meteorite entry parameters. To estimate track annealing, the temperature history during atmospheric heating at different distances from the crusted surface of the meteorite is obtained by solving heat conduction equation in conjunction with meteorite entry model, and use of the annealing model to evaluate the degree of annealing of tracks. It is shown that the measured values of delta X sub 1 and delta X sub 2 in three of the meteorites studied are consistent with values using preatmospheric mass, entry velocity and entry angle of these meteorites.

Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

NASA Astrophysics Data System (ADS)

Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

2018-06-01

This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

FAST TRACK COMMUNICATION: Directional annealing-induced texture in melt-spun (Sm12Co88)99Nb1 alloy

NASA Astrophysics Data System (ADS)

Jayaraman, T. V.; Rogge, P.; Shield, J. E.

2010-07-01

Developing texture in nanocrystalline permanent magnet alloys is of significant importance. Directional annealing is shown to produce texture in the permanent magnet alloy (Sm12Co88)99Nb1. Melt spinning produced isotropic grain structures of the hard magnetic metastable SmCo7 phase, with grain sizes of ~300 nm. Conventional annealing of melt-spun (Sm12Co88)99Nb1 alloy produced Sm2Co17 phase with random crystallographic orientation. Directional annealing of melt-spun (Sm12Co88)99Nb1 alloy, with appropriate combinations of annealing temperature and translational velocity, produced Sm2Co17 phase with (0 0 0 6) in-plane texture, as determined by x-ray diffraction analysis and magnetic measurements. The magnetization results show out-of-plane remanence higher than the in-plane remanence resulting in the degree of 'magnetic' texture in the order of 25-40%. Coercivity values above 2 kOe were maintained. The texture development via directional annealing while minimizing exposure to elevated temperatures provides a new route to anisotropic high-energy permanent magnets.

[Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

PubMed

Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

2014-07-01

In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

Thermal annealing effects on multi-walled carbon nanotube yarns probed by Raman spectroscopy.

PubMed

Pierlot, Anthony P; Woodhead, Andrea L; Church, Jeffrey S

2014-01-03

The realized mechanical properties of CNT macrostructures such as webs and yarns remain significantly lower than those of the individual CNTs. Structural changes induced by thermal annealing under inert atmosphere were assessed using Raman spectroscopy. Annealing above 1000 °C resulted in a marked decrease in the D/G ratio which can be attributed to an increase in the crystallite size or the distance between defects. The band component parameters obtained by spectral deconvolution reveal that the D band peak maximum shifts to slightly higher energy with increased annealing temperature. In contrast, the energy of the G band did not change. The full widths at half height (FWHH) of the D and G bands are seen to decrease with increasing annealing temperature. The tensile properties of the yarns have been investigated and it was found that the yarn tenacity did not improve with these structural changes. The effect of impurities in the annealing system such as oxygen, adsorbed water or organic surface contamination was also investigated. Crown Copyright © 2013. Published by Elsevier B.V. All rights reserved.

Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

PubMed

Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

2010-03-01

Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

NASA Astrophysics Data System (ADS)

Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

2018-03-01

Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

PubMed Central

Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

2016-01-01

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature. PMID:28773440

Radiation intensification of the reactor pressure vessels recovery by low temperature heat treatment (wet annealing)

NASA Astrophysics Data System (ADS)

Krasikov, E.

2015-04-01

As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. There are two approaches to annealing. The first one is so-called «dry» high temperature (∼475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment. The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible.

Simulated Stochastic Approximation Annealing for Global Optimization with a Square-Root Cooling Schedule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Faming; Cheng, Yichen; Lin, Guang

2014-06-13

Simulated annealing has been widely used in the solution of optimization problems. As known by many researchers, the global optima cannot be guaranteed to be located by simulated annealing unless a logarithmic cooling schedule is used. However, the logarithmic cooling schedule is so slow that no one can afford to have such a long CPU time. This paper proposes a new stochastic optimization algorithm, the so-called simulated stochastic approximation annealing algorithm, which is a combination of simulated annealing and the stochastic approximation Monte Carlo algorithm. Under the framework of stochastic approximation Markov chain Monte Carlo, it is shown that themore » new algorithm can work with a cooling schedule in which the temperature can decrease much faster than in the logarithmic cooling schedule, e.g., a square-root cooling schedule, while guaranteeing the global optima to be reached when the temperature tends to zero. The new algorithm has been tested on a few benchmark optimization problems, including feed-forward neural network training and protein-folding. The numerical results indicate that the new algorithm can significantly outperform simulated annealing and other competitors.« less

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

PubMed Central

Hsu, Kai-Chiang; Hsiao, Wei-Hua; Lee, Ching-Ting; Chen, Yan-Ting; Liu, Day-Shan

2015-01-01

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively. PMID:28793675

Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

NASA Astrophysics Data System (ADS)

Murakoshi, Atsushi; Harada, Tsubasa; Miyano, Kiyotaka; Harakawa, Hideaki; Aoyama, Tomonori; Yamashita, Hirofumi; Kohyama, Yusuke

2017-09-01

To reduce the number of crystal defects in a p+Si diffusion layer by a low-thermal-budget annealing process, we have examined crystal recovery in the amorphous layer formed by the cryogenic implantation of germanium and boron combined with sub-melt laser spike annealing (LSA). The cryogenic implantation at -150 °C is very effective in suppressing vacancy clustering, which is advantageous for rapid crystal recovery during annealing. The crystallinity after LSA is shown to be very high and comparable to that after rapid thermal annealing (RTA) owing to the cryogenic implantation, although LSA is a low-thermal-budget annealing process that can suppress boron diffusion effectively. It is also shown that in the p+Si diffusion layer, there is high contact resistance due to the incomplete formation of a metal silicide contact, which originates from insufficient outdiffusion of surface contaminants such as fluorine. To widely utilize the marked reduction in the number of crystal defects, sufficient removal of surface contaminants will be required in the low-thermal-budget process.

Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

NASA Technical Reports Server (NTRS)

Michael, Sherif; Cypranowski, Corinne; Anspaugh, Bruce

1990-01-01

The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

Thermal engineering of FAPbI3 perovskite material via radiative thermal annealing and in situ XRD

PubMed Central

Pool, Vanessa L.; Dou, Benjia; Van Campen, Douglas G.; Klein-Stockert, Talysa R.; Barnes, Frank S.; Shaheen, Sean E.; Ahmad, Md I.; van Hest, Maikel F. A. M.; Toney, Michael F.

2017-01-01

Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space of FAPbI3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI3 annealing time, 10 min at 170 °C, can be significantly reduced to 40 s at 170 °C without affecting the photovoltaic performance. The Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI3 into PbI2. PMID:28094249

Effect of Annealing Treatments on the Microstructure, Mechanical Properties and Corrosion Behavior of Direct Metal Laser Sintered Ti-6Al-4V

NASA Astrophysics Data System (ADS)

Xu, Yangzi; Lu, Yuan; Sundberg, Kristin L.; Liang, Jianyu; Sisson, Richard D.

2017-05-01

An experimental investigation on the effects of post-annealing treatments on the microstructure, mechanical properties and corrosion behavior of direct metal laser sintered Ti-6Al-4V alloys has been conducted. The microstructure and phase evolution as affected by annealing treatment temperature were examined through scanning electron microscopy and x-ray diffraction. The tensile properties and Vickers hardness were measured and compared to the commercial Grade 5 Ti-6Al-4V alloy. Corrosion behavior of the parts was analyzed electrochemically in simulated body fluid at 37 °C. It was found out that the as-printed parts mainly composed of non-equilibrium α' phase. Annealing treatment allowed the transformation from α' to α phase and the development of β phase. The tensile test results indicated that post-annealing treatment could improve the ductility and decrease the strength. The as-printed Ti-6Al-4V part exhibits inferior corrosion resistance compared to the commercial alloy, and post-annealing treatment can reduce its susceptibility to corrosion by reducing the two-phase interface area.

Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

NASA Astrophysics Data System (ADS)

Wang, Dong; Chen, Z. Q.; Wang, D. D.; Gong, J.; Cao, C. Y.; Tang, Z.; Huang, L. R.

2010-11-01

High purity Fe 2O 3/ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 °C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe 2O 3/ZnO nanocomposites were investigated by X-ray diffraction 2θ scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe 2O 4. Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe 2O 3/ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 °C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 °C, suggesting that it is not related with the interfacial defects.

Enhanced magnetic refrigeration properties in Mn-rich Ni-Mn-Sn ribbons by optimal annealing

PubMed Central

Zhang, Yu; Zhang, Linlin; Zheng, Qiang; Zheng, Xinqi; Li, Ming; Du, Juan; Yan, Aru

2015-01-01

The influence of annealing time on temperature range of martensitic phase transition (ΔTA-M), thermal hysteresis (ΔThys), magnetic hysteresis loss (ΔMhys), magnetic entropy change (ΔSM) and relative refrigeration capacity (RC) of the Mn-rich Ni43Mn46Sn11 melt spun ribbons have been systematically studied. By optimal annealing, an extremely large ΔSM of 43.2 J.kg−1K−1 and a maximum RC of 221.0 J.kg−1 could be obtained respectively in a field change of 5 T. Both ΔTA-M and ΔThys decreases after annealing, while ΔMhys and ΔSM first dramatically increase to a maximum then degenerates as increase of annealing time. A large effective cooling capacity (RCeff) of 115.4 J.kg−1 was achieved in 60 min annealed ribbons, which increased 75% compared with that unannealed ribbons. The evolution of magnetic properties and magnetocaloric effect has been discussed and proved by atomic ordering degree, microstructure and composition analysis. PMID:26055884

Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com; Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com; Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com

EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFETmore » as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.« less

Enhanced tunability of magneto-impedance and magneto-capacitance in annealed Metglas/PZT magnetoelectric composites

NASA Astrophysics Data System (ADS)

Leung, Chung Ming; Zhuang, Xin; Xu, Junran; Li, Jiefang; Zhang, Jitao; Srinivasan, G.; Viehland, D.

2018-05-01

This report is on a new class of magnetostatically tunable magneto-impedance and magneto-capacitance devices based on a composite of ferromagnetic Metglas and ferroelectric lead zirconate titanate (PZT). Layered magneto-electric (ME) composites with annealed Metglas and PZT were studied in a longitudinal in-plane magnetic field-transverse electric field (L-T) mode. It was found that the degree of tunability was dependent on the annealing temperature of Metglas. An impedance tunability (ΔZ/Z0) of ≥400% was obtained at the electromechanical resonance (EMR) frequency (fr) for a sample with Metglas layers annealed at Ta = 500oC. This tunability is a factor of two higher than for composites with Metglas annealed at 350oC. The tunability of the capacitance, (ΔC/C0), was found to be 290% and -135k% at resonance and antiresonance, respectively, for Ta = 500oC. These results provide clear evidence for improvement in static magnetic field tunability of impedance and capacitance of ME composites with the use of annealed Metglas and are of importance for their potential use in tunable electronic applications.

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes.

PubMed

Hsu, Kai-Chiang; Hsiao, Wei-Hua; Lee, Ching-Ting; Chen, Yan-Ting; Liu, Day-Shan

2015-11-16

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n -ZnO/ p -GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n -ZnO and p -GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n -ZnO and p -GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n -ZnO/ p -GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.

Effect of PdZn film on the performance of green light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Ja-Yeon; Kwon, Min-Ki; Cho, Chu Young; Lee, Sang-Jun; Park, Seong-Ju; Kim, Sunwoon; Kim, Je Won; Kim, Yong Chun

2008-08-01

PdZn was used to improve the electrical properties of p-GaN annealed at low activation temperature for high efficiency green light-emitting diodes (LEDs). A hole concentration of p-GaN annealed at 600 °C with PdZn was almost 28 times higher than that of p-GaN annealed at 800 °C without PdZn. SIMS analysis showed that hydrogen concentration in p-GaN annealed with PdZn is decreased compared to that without using PdZn because the PdZn enhances hydrogen desorption from the Mg-doped p-GaN film at low temperature. The green MQW LED annealed at 600 °C using PdZn showed improved electrical characteristic and optical output power compared to that annealed at 800 °C without using PdZn. These results are attributed to the increase of hole concentration of p-GaN due to removal of hydrogen in p-GaN by PdZn and the decrease in thermal damage of MQW at low activation temperature.

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H. W., Jr.; Mehta, S.; Swartz, C. K.

1984-01-01

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Raman and thermal-stability studies on annealed HgBa 2CuO 4+δ

NASA Astrophysics Data System (ADS)

Ren, Y. T.; Chang, H.; Xiong, Q.; Xue, Y. Y.; Chu, C. W.

1994-06-01

We have studied as-synthesized, vacuum-annealed and high-pressure oxygen annealed HgBa 2CuO 4+δ(Hg-1201) using Raman scattering. The apical-oxygen vibrational frequencies showed a slight but systematic shift (590, 591 and 587 cm -1), in agreement with the slight change in the Hg-O bond length from neutron-diffraction results. This suggested that the valence of Hg did not change significantly with oxygen content. The intensity of the ∼ 570 cm -1 peak decreased significantly after vacuum anneal and increased after high-pressure oxygen anneal, confirming the early assignment of this mode to interstitial oxygen. The thermal stability of these samples was studied by increasing laser power. High power density resulted in the decomposition of Hg-1201, mainly to BaCuO 2-δ, suggesting mercury loss upon local heating. It was found that the annealed samples decomposed more easily. In addition, one kind of crystallites exhibited a 326 cm -1 broad peak, which disappeared after high-power irradiation. We propose that this extra peak may come from HgO and/or the defect oxygen O (4).

Thermal engineering of FAPbI 3 perovskite material via radiative thermal annealing and in situ XRD

DOE PAGES

Pool, Vanessa L.; Dou, Benjia; Van Campen, Douglas G.; ...

2017-01-17

Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI 3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space ofmore » FAPbI 3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI 3 annealing time, 10 min at 170 degrees C, can be significantly reduced to 40 s at 170 degrees C without affecting the photovoltaic performance. Lastly, the Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI 3 into PbI 2.« less

Photoluminescence in Spray Pyrolysis Deposited β-In2S3 Thin Films

NASA Astrophysics Data System (ADS)

Jayakrishnan, R.

2018-04-01

Spray pyrolysis deposited In2S3 thin films exhibit two prominent photoluminescent emissions. One of the emissions is green in color and centered at around ˜ 540 nm and the other is centered at around ˜ 690 nm and is red in color. The intensity of the green emission decreases when the films are subjected to annealing in air or vacuum. The intensity of red emission increases when films are air annealed and decreases when vacuum annealed. Vacuum annealing leads to an increase in work function whereas air annealing leads to a decrease in work function for this thin film system relative to the as deposited films indicating changes in space charge regions. Surface photovoltage analysis using a Kelvin probe leads to the conclusion that inversion of band bending occurs as a result of annealing. Correlating surface contact potential measurements using a Kelvin probe, x-ray photoelectron spectroscopy and photoluminescence, we conclude that the surface passivation plays a critical role in controlling the photoluminescence from the spray pyrolysis deposited for In2S3 thin films.

Glass-derived superconducting ceramics with zero resistance at 107 K in the Bi(1.5)Pb(0.5)Sr2Ca2Cu3O(x) system

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Farrell, D. E.

1989-01-01

A melt of composition Bi(1.5)Pb(0.5)Sr2Ca2Cu3O(x) was fast quenched to form a glass. This was subsequently air annealed and the influence of annealing time and temperature on the formation of various crystalline phases was investigated. X-ray powder diffraction indicate that none of the resulting samples were single phase. However, for an annealing temperature of 840 C, the volume fraction of the high Tc phase (isostructural with Bi2Sr2Ca2Cu3O10) increased with annealing time. A specimen annealed at this temperature for 243 h followed by slow cooling showed a sharp transition and Tc (R = 0) = 107.2 K.

Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-raymore » photon spectroscopy and atomic force microscopy.« less

Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

NASA Astrophysics Data System (ADS)

Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

2018-05-01

ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

Studies of implanted iron in silicon by channeling and Rutherford backscattering

NASA Technical Reports Server (NTRS)

Wang, P. W.; Cheng, H. S.; Gibson, W. M.; Corbett, J. W.

1986-01-01

Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. It is found that the critical fluence of 100-keV iron implanted into silicon at room temperature is about 2.5 x 10 to the 14th Fe/sq cm, and that iron atoms are gettered by silicon oxidation. In this supersaturated region, iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (greater than or equal to 1100 C) but not at all during low-temperature annealing (less than or equal to 1000 C) in dry nitrogen ambient.

Investigation on Structural and Optical Properties of Copper Telluride Thin Films with Different Annealing Temperature

NASA Astrophysics Data System (ADS)

Nishanthini, R.; Muthu Menaka, M.; Pandi, P.; Bahavan Palani, P.; Neyvasagam, K.

The copper telluride (Cu2Te) thin film of thickness 240nm was coated on a microscopic glass substrate by thermal evaporation technique. The prepared films were annealed at 150∘C and 250∘C for 1h. The annealing effect on Cu2Te thin films was examined with different characterization methods like X-ray Diffraction Spectroscopy (XRD), Scanning Electron Microscopy (SEM), Ultra Violet-Visible Spectroscopy (UV-VIS) and Photoluminescence (PL) Spectroscopy. The peak intensities of XRD spectra were increased while increasing annealing temperature from 150∘C to 250∘C. The improved crystallinity of the thin films was revealed. However, the prepared films are exposed complex structure with better compatibility. Moreover, the shift in band gap energy towards higher energies (blue shift) with increasing annealing temperature is observed from the optical studies.

Self-Healing of Proton Damage in Lithium Niobite LiNbO2

NASA Astrophysics Data System (ADS)

Shank, Joshua C.; Tellekamp, M. Brooks; Zhang, En Xia; Bennett, W. Geoff; McCurdy, Michael W.; Fleetwood, Daniel M.; Alles, Michael L.; Schrimpf, Ronald D.; Doolittle, W. Alan

2015-04-01

Proton radiation damage and short-term annealing are investigated for lithium niobite (LiNbO2) mixed electronic-ionic memristors. Radiation damage and short-term annealing were characterized using Electrochemical Impedance Spectroscopy (EIS) to determine changes in the device resistance and the lithium ion mobility. The radiation damage resulted in a 0.48% change in the resistance at a fluence of 1014 cm-2. In-situ short-term annealing at room temperature reduced the net detrimental effect of the damage with a time constant of about 9 minutes. The radiation damage mechanism is attributed predominantly to displacement damage at the niobium and oxygen sites trapping lithium ions that are responsible for induced polarization within the material. Short term annealing is attributed to room temperature thermal annealing of these defects, freeing the highly mobile lithium ions.

Effect of stress, strain and optical properties in vacuum and normal annealed ZnO thin films using RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kumar, B. Santhosh; Purvaja, K.; Harinee, N.; Venkateswaran, C.

2018-05-01

Zinc oxide thin films have been deposited on quartz substrate using RF magnetron sputtering. The deposited films were subjected to different annealing atmosphere at a fixed temperature of 500 °C for 5h. The X-ray diffraction (XRD) patterns reveals the shift in the peak of both normal annealed and vacuum annealed thin films when compared to as-deposited ZnO film. The crystallite size, intrinsic stress and other parameters were calculated from XRD data. The surface morphology of the obtained films were studied using Atomic force microscopy (AFM). From Uv-Visible spectroscopy, the peak at 374 nm of all the films is characteristics of ZnO. The structural, thermal stability and optical properties of the annealed ZnO films are discussed in detail.

Microstructure and magnetic behavior of Cu-Co-Si ternary alloy synthesized by mechanical alloying and isothermal annealing

NASA Astrophysics Data System (ADS)

Chabri, Sumit; Bera, S.; Mondal, B. N.; Basumallick, A.; Chattopadhyay, P. P.

2017-03-01

Microstructure and magnetic behavior of nanocrystalline 50Cu-40Co-10Si (at%) alloy prepared by mechanical alloying and subsequent isothermal annealing in the temperature range of 450-650 °C have been studied. Phase evolution during mechanical alloying and isothermal annealing is characterized by X-ray diffraction (XRD), differential thermal analyzer (DTA), high resolution transmission electron microscopy (HRTEM) and magnetic measurement. Addition of Si has been found to facilitate the metastable alloying of Co in Cu resulting into the formation of single phase solid solution having average grain size of 9 nm after ball milling for 50 h duration. Annealing of the ball milled alloy improves the magnetic properties significantly and best combination of magnetic properties has been obtained after annealing at 550 °C for 1 h duration.

Structural changes during annealing of GaInAsN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurtz, Sarah; Webb, J.; Gedvilas, L.

2001-02-05

The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at {approx}470 cm-1 (Ga--N stretch) and two or three bands at {approx}3100 cm-1 (N--H stretch). The change in the Ga--N stretch absorption can be explained if the nitrogen environment is converted from NGa{sub 4} to NInGa{sub 3} after annealing. The N--H stretch ismore » also changed after annealing, implying a second, and unrelated, structural change.« less

Large enhancement of X-ray excited luminescence in Ga-doped ZnO nanorod arrays by hydrogen annealing

NASA Astrophysics Data System (ADS)

Li, Qianli; Liu, Xiaoliln; Gu, Mu; Li, Fengrui; Zhang, Juannan; Wu, Qiang; Huang, Shiming; Liu, Si

2018-03-01

Highly c-axis oriented and densely packed ZnO:Ga nanorod arrays were fabricated on ZnO-seeded substrates by hydrothermal method, and the effect of hydrogen annealing on their morphology, structure and luminescence properties was investigated in detail. Under ultraviolet or X-ray excitation, an intense ultraviolet luminescence appeared in the hydrogen-annealed samples owing to the formation of a shallow hydrogen donor state, which can sharply activate the reconbination radiation. The luminescence intensity increased with the annealing temperature, and then decreased at a higher temperature due to the dissociation of the hydrogen ion. The optimum concentration and time of hydrogen annealing were acquired simultaneously. It is expected that the ZnO:Ga nanorod array is a promising candidate for application in ultrafast and high-spatial-resolution X-ray imaging detector.

Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

NASA Technical Reports Server (NTRS)

Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

1973-01-01

Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Improved contact characteristics of laser-annealed p-GaN coated with Ni films

NASA Astrophysics Data System (ADS)

Zheng, Bo-Sheng; Ho, Chong-Long; Cheng, Kai-Yuan; Liao, Chien-Lan; Wu, Meng-Chyi; Hsieh, Kuang-Chien

2015-08-01

It is demonstrated that rapid thermal annealing or laser annealing of Mg-doped GaN (about 0.5 μm in thickness) in general helps activate acceptors and increase the average hole concentration by a factor of about 2 from low to mid of 1017/cm3 determined by the Hall measurements. Use of laser annealing of p-GaN coated with Ni and removal afterwards prior to depositing conventional Ni/Au ohmic-contact films, however, greatly improves the contact resistance from 10-2 to 1.6 × 10-4 Ω cm2. Other heat treatment schemes do not improve as much or make it even worse. The most reduction of contact resistance is attributed to the highest surface hole density in an uneven carrier profile achieved by laser annealing with a Ni cap layer.

Shock, Post-Shock Annealing, and Post-Annealing Shock in Ureilites

NASA Technical Reports Server (NTRS)

Rubin, Alan E.

2006-01-01

The thermal and shock histories of ureilites can be divided into four periods: 1) formation, 2) initial shock, 3) post-shock annealing, and 4) post-annealing shock. Period 1 occurred approx.4.55 Ga ago when ureilites formed by melting chondritic material. Impact events during period 2 caused silicate darkening, undulose to mosaic extinction in olivines, and the formation of diamond, lonsdaleite, and chaoite from indigenous carbonaceous material. Alkali-rich fine-grained silicates may have been introduced by impact injection into ureilites during this period. About 57% of the ureilites were unchanged after period 2. During period 3 events, impact-induced annealing caused previously mosaicized olivine grains to become aggregates of small unstrained crystals. Some ureilites experienced reduction as FeO at the edges of olivine grains reacted with C from the matrix. Annealing may also be responsible for coarsening of graphite in a few ureilites, forming euhedral-appearing, idioblastic crystals. Orthopyroxene in Meteorite Hills (MET) 78008 may have formed from pigeonite by annealing during this period. The Rb-Sr internal isochron age of approx.4.0 Ga for MET 78008 probably dates the annealing event. At this late date, impacts are the only viable heat source. About 36% of ureilites experienced period 3 events, but remained unchanged afterwards. During period 4, approx.7% of the ureilites were shocked again, as is evident in the polymict breccia, Elephant Moraine (EET) 83309. This rock contains annealed mosaicized olivine aggregates composed of small individual olivine crystals that exhibit undulose extinction. Ureilites may have formed by impact-melting chondritic material on a primitive body with heterogeneous O isotopes. Plagioclase was preferentially lost from the system due to its low impedance to shock compression. Brief melting and rapid burial minimized the escape of planetary-type noble gases from the ureilitic melts. Incomplete separation of metal from silicates during impact melting left ureilites with relatively high concentrations of trace siderophile elements.

Annealing of Co-Cr dental alloy: effects on nanostructure and Rockwell hardness.

PubMed

Ayyıldız, Simel; Soylu, Elif Hilal; Ide, Semra; Kılıç, Selim; Sipahi, Cumhur; Pişkin, Bulent; Gökçe, Hasan Suat

2013-11-01

The aim of the study was to evaluate the effect of annealing on the nanostructure and hardness of Co-Cr metal ceramic samples that were fabricated with a direct metal laser sintering (DMLS) technique. Five groups of Co-Cr dental alloy samples were manufactured in a rectangular form measuring 4 × 2 × 2 mm. Samples fabricated by a conventional casting technique (Group I) and prefabricated milling blanks (Group II) were examined as conventional technique groups. The DMLS samples were randomly divided into three groups as not annealed (Group III), annealed in argon atmosphere (Group IV), or annealed in oxygen atmosphere (Group V). The nanostructure was examined with the small-angle X-ray scattering method. The Rockwell hardness test was used to measure the hardness changes in each group, and the means and standard deviations were statistically analyzed by one-way ANOVA for comparison of continuous variables and Tukey's HSD test was used for post hoc analysis. P values of <.05 were accepted as statistically significant. The general nanostructures of the samples were composed of small spherical entities stacked atop one another in dendritic form. All groups also displayed different hardness values depending on the manufacturing technique. The annealing procedure and environment directly affected both the nanostructure and hardness of the Co-Cr alloy. Group III exhibited a non-homogeneous structure and increased hardness (48.16 ± 3.02 HRC) because the annealing process was incomplete and the inner stress was not relieved. Annealing in argon atmosphere of Group IV not only relieved the inner stresses but also decreased the hardness (27.40 ± 3.98 HRC). The results of fitting function presented that Group IV was the most homogeneous product as the minimum bilayer thickness was measured (7.11 Å). After the manufacturing with DMLS technique, annealing in argon atmosphere is an essential process for Co-Cr metal ceramic substructures. The dentists should be familiar with the materials that are used in clinic for prosthodontics treatments.

Improved Turn-On and Operating Voltages in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2017-10-01

While good ohmic contact formation has been achieved on both p-GaN and n-AlGaN surfaces, the turn-on and operating voltages of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) remain very high. We find that this critical problem is mainly caused by the large difference between the annealing temperatures required for ohmic contact formation on the p-GaN and high Al-fraction n-AlGaN surfaces. We studied the effects of the high-temperature annealing treatments required for n-ohmic contact formation on the subsequent p-ohmic contact formation process in DUV-LEDs. The results show that post-annealing treatment at high temperature is necessary to form an ohmic contact on n-Al0.7Ga0.3N, but a treatment temperature of 900°C or more could cause severe degradation of the specific contact resistivity and the bulk resistivity of p-GaN. We conclude that 900°C is the optimum temperature to form an ohmic contact on n-Al0.7Ga0.3N in DUV-LEDs, where p-GaN and n-Al0.7Ga0.3N act as the p- and n-ohmic contact layers, respectively. We also found that the specific contact resistivity of p-GaN can be reduced by an additional low-temperature annealing treatment after the high-temperature annealing step; this effect can be attributed to the enhancement of the hole concentration in the p-GaN surface contact region. Finally, DUV-LEDs that emit at 280 nm were fabricated using four different annealing treatments during processing. A considerable reduction in the series resistance and thereby in the operating voltage was confirmed using the annealing process proposed above, consisting of a high-temperature anneal at 900°C followed by a low-temperature anneal at 500°C for 3 min.

The Effect of Hydrogen Annealing on the Oxidation Resistance of Four EPM Single Crystal Superalloys

NASA Technical Reports Server (NTRS)

Smialek, James L.; Barrett, Charles A.; Garlick, Ralph G.

2001-01-01

Four single crystal EPM (enabling propulsion materials) developmental airfoil superalloys were hydrogen annealed at 1300 C for up to 100 hours to remove sulfur and improve oxidation resistance. Although the 1100 and 1150 C cyclic oxidation resistance was remarkably improved by annealing for 24 or 100 hours, the behavior was still considerably inferior to that of commercially available single crystal superalloys, especially those that are either Y-doped or hydrogen annealed. Excessive degradation in the developmental alloys appeared to be correlated with low Cr contents and, to a lesser extent, high Co and Re contents.

Structural changes in the nano-oxide layer with annealing in specular spin valves

NASA Astrophysics Data System (ADS)

Jang, S. H.; Kim, Y. W.; Kang, T.; Kim, H. J.; Kim, K. Y.

2003-05-01

We investigated microstructural changes in a nano-oxide layer (NOL) with annealing in specular spin valves (SVs) by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In the SV annealed at high temperature of 400 °C, an increase in thickness and a local breakdown of the NOL were observed. This local coarsening of the NOL is closely related to the formation of Mn oxides in the oxide-rich part of the NOL through Mn diffusion. Thus, the chemical structure of the NOL changes to the structure with Mn oxide-rich content after annealing.

Enhancement of bending strain tolerance and current carrying property of MgB2 based multifilamentary wires

NASA Astrophysics Data System (ADS)

Thomas, Syju; Varghese, Neson; Rahul, S.; Devadas, K. M.; Vinod, K.; Syamaprasad, U.

2012-12-01

The effect of bending strain on current carrying capacity of MgB2 multifilamentary wires was studied with 4, 8 and 16 multifilamentary wires. The critical current density (JC) of straight wires and bent wires with 5, 10, and 15 cm diameter was measured. Both annealed & bent and bent & annealed wires were used for measurement. The JC of annealed & bent wires were found to decrease with decrease in bent diameter and the rate of degradation of JC decreased with increasing number of filaments, while bent & annealed wires almost retained its JC at all diameters studied.

Thermal annealing induced the tunable optical properties of silver thin films with linear variable thickness

NASA Astrophysics Data System (ADS)

Hong, Ruijin; Shao, Wen; Ji, Jialin; Tao, Chunxian; Zhang, Dawei

2018-06-01

Silver thin films with linear variable thickness were deposited at room temperature. The corresponding tunability of optical properties and Raman scattering intensity were realized by thermal annealing process. With the thickness increasing, the topography of as-annealed silver thin films was observed to develop from discontinued nanospheres into continuous structure with a redshift of the surface plasmon resonance wavelength in visible region. Both the various nanosphere sizes and states of aggregation of as-annealed silver thin films contributed to significantly increasing the sensitivity of surface enhanced Raman scattering (SERS).

TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing

NASA Astrophysics Data System (ADS)

Shan, Fei; Kim, Sung-Jin

2018-02-01

We report on thin-film transistors (TFTs) based on titanium oxide (TiOx) prepared using femtosecond laser pre-annealing for electrical application of n-type channel oxide transparent TFTs. Amorphous TFTs using TiOx semiconductors as an active layer have a low-temperature process and show remarkable electrical performance. And the femtosecond laser pre-annealing process has greater flexibility and development space for semiconductor production activity, with a fast preparation method. TFTs with a TiOx semiconductor pre-annealed via femtosecond laser at 3 W have a pinhole-free and smooth surface without crystal grains.

Surface Superstructure of Carbon Nanotubes on Highly Oriented Pyrolytic Graphite Annealed at Elevated Temperatures

NASA Astrophysics Data System (ADS)

An, Bai; Fukuyama, Seiji; Yokogawa, Kiyoshi; Yoshimura, Masamichi

1998-06-01

Carbon nanotubes deposited on highly oriented pyrolytic graphite (HOPG) are annealed in ultra high vacuum. The effect of annealing temperature on the surface morphology of the carbon nanotubes on HOPG is examined by scanning tunneling microscopy. The ring-like surface superstructure of (\\sqrt {3}× \\sqrt {3})R30° of graphite is found on the carbon nanotubes annealed above 1593 K. The tips of the carbon nanotubes are destroyed and the stacking misarrangement between the upper and the lower walls of the tube join with HOPG resulting in the superstructure.

Role of annealing on the structural and optical properties of nanostructured diaceto bis-benzimidazole Mn(II) complex thin films

NASA Astrophysics Data System (ADS)

Praveen, P. A.; Babu, R. Ramesh; Ramamurthi, K.

2017-02-01

A coordination complex, manganese incorporated benzimidazole, thin films were prepared by chemical bath deposition method. Structural characterization of the deposited films, carried out by Fourier transform infrared spectroscopy, Raman and electron paramagnetic resonance spectral analyses, reveals the distorted tetrahedral environment of the metal ion with bis-benzimidazole ligand. Further the molecular composition of the deposited metal complex was estimated by energy-dispersive X-ray spectroscopy. The prepared thin films were thermally treated to study the effect of annealing temperature on the surface morphology and the results showed that the surface homogeneity of the films increased for thermally treated films up to 150 °C. But distortion and voids were observed for the films annealed at 200 °C. The Raman analysis reveals the molecular hydrogen bond distortion which leads to the evaporation of the metal complex from the thin film surface with respect to annealing temperature. The linear and nonlinear optical properties of the as prepared and annealed films were studied using ultraviolet-visible transmittance spectroscopy, second harmonic generation and Z-scan analyses. Films annealed at 150 °C show a better linear transmittance in the visible region and larger SHG efficiency and third order nonlinear susceptibility when compared with the other samples. Further, the film annealed at 150 °C was subjected to optical switching analysis and demonstrated to have an inverted switching behavior.

Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs

NASA Astrophysics Data System (ADS)

Descouts, B.; Duhamel, N.; Godefroy, S.; Krauz, P.

Ion implantation in semiconductors provides a doping technique with several advantages over more conventional doping methods and is now extensively used for device applications, e.g. field effect transistors (MESFET GaAs, MIS (InP), GaAs/GaAlAs heterojunction bipolar transistors (HBT). Because of the lattice disorder produced by the implantation, the dopant must be made electrically active by a postimplant anneal. As the device performances are very dependent on its electrical characteristics, the anneal is a very important stage of the process. Rapid anneal is known to provide less exodiffusion and less induffusion of impurities compared to conventional furnace anneal, so this technique has been used in this work to activate an n-type dopant (Si) in InP and a p-type dopant (Mg) in GaAs and GaAs/GaAIAs. These two ions have been chosen to realize implanted MIS InP and the base contacts for GaAs/GaAlAs HBTs. The experimental conditions to obtain the maximum electrical activity in these two cases will be detailed. For example, although we have not been able to obtain a flat profile in Mg + implanted GaAs/GaAlAs heterostructure by conventional thermal anneal, rapid thermal anneal gives a flat hole profile over a depth of 0.5 μm with a concentration of 1 x 10 19 cm -3.

Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

NASA Technical Reports Server (NTRS)

Payson, J. S.; Abdulaziz, S.; Li, Y.; Woodyard, J. R.

1991-01-01

It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

Remarkably Enhanced Room-Temperature Hydrogen Sensing of SnO₂ Nanoflowers via Vacuum Annealing Treatment.

PubMed

Liu, Gao; Wang, Zhao; Chen, Zihui; Yang, Shulin; Fu, Xingxing; Huang, Rui; Li, Xiaokang; Xiong, Juan; Hu, Yongming; Gu, Haoshuang

2018-03-23

In this work, SnO₂ nanoflowers synthesized by a hydrothermal method were employed as hydrogen sensing materials. The as-synthesized SnO₂ nanoflowers consisted of cuboid-like SnO₂ nanorods with tetragonal structures. A great increase in the relative content of surface-adsorbed oxygen was observed after the vacuum annealing treatment, and this increase could have been due to the increase in surface oxygen vacancies serving as preferential adsorption sites for oxygen species. Annealing treatment resulted in an 8% increase in the specific surface area of the samples. Moreover, the conductivity of the sensors decreased after the annealing treatment, which should be attributed to the increase in electron scattering around the defects and the compensated donor behavior of the oxygen vacancies due to the surface oxygen adsorption. The hydrogen sensors of the annealed samples, compared to those of the unannealed samples, exhibited a much higher sensitivity and faster response rate. The sensor response factor and response rate increased from 27.1% to 80.2% and 0.34%/s to 1.15%/s, respectively. This remarkable enhancement in sensing performance induced by the annealing treatment could be attributed to the larger specific surface areas and higher amount of surface-adsorbed oxygen, which provides a greater reaction space for hydrogen. Moreover, the sensors with annealed SnO₂ nanoflowers also exhibited high selectivity towards hydrogen against CH₄, CO, and ethanol.

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing.

PubMed

Lu, Qifeng; Zhao, Chun; Mu, Yifei; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R

2015-07-29

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrO x ; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 10 12 cm -2 for as-deposited sample to 4.55 × 10 12 cm -2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10 - ⁶ A/cm² at V g = +0.5 V for the as-deposited sample to 10 -3 A/cm² at V g = +0.5 V for the 900 °C annealed one.

Local configurations and atomic intermixing in as-quenched and annealed Fe1-xCrx and Fe1-xMox ribbons

NASA Astrophysics Data System (ADS)

Stanciu, A. E.; Greculeasa, S. G.; Bartha, C.; Schinteie, G.; Palade, P.; Kuncser, A.; Leca, A.; Filoti, G.; Birsan, A.; Crisan, O.; Kuncser, V.

2018-04-01

Local atomic configuration, phase composition and atomic intermixing in Fe-rich Fe1-xCrx and Fe1-xMox ribbons (x = 0.05, 0.10, 0.15), of potential interest for high-temperature applications and nuclear devices, are investigated in this study in relation to specific processing and annealing routes. The Fe-based thin ribbons have been prepared by induction melting, followed by melt spinning and further annealed in He at temperatures up to 1250 °C. The complex structural, compositional and atomic configuration characterisation has been performed by means of X-ray diffraction (XRD), transmission Mössbauer spectroscopy and differential scanning calorimetry (TG-DSC). The XRD analysis indicates the formation of the desired solid solutions with body-centred cubic (bcc) structure in the as-quenched state. The Mössbauer spectroscopy results have been analysed in terms of the two-shell model. The distribution of Cr/Mo atoms in the first two coordination spheres is not homogeneous, especially after annealing, as supported by the short-range order parameters. In addition, high-temperature annealing treatments give rise to oxidation of Fe (to haematite, maghemite and magnetite) at the surface of the ribbons. Fe1-xCrx alloys are structurally more stable than the Mo counterpart under annealing at 700 °C. Annealing at 1250 °C in He enhances drastically the Cr clustering around Fe nuclei.

The effects of annealing on the microstructure and mechanical properties of Fe 28Ni 18Mn 33Al 21

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Fanling; Qiu, Jingwen; Baker, Ian

In this paper, As-cast Fe 28Ni 18Mn 33Al 21, which consists of aligned, 50 nm, (Ni, Al)-rich B2, and (Fe, Mn)-rich f.c.c. phases, was annealed at a variety of temperatures up to 1423 K and the microstructure and mechanical properties were examined. It was shown that the as-cast microstructure arises from a eutectoid transformation at ~1300 K. Annealing at temperatures ≤1073 K produces β-Mn-structured precipitates and hardness values up to 816 HV, while annealing at temperatures >1073 K leads to dramatic coarsening of the two-phase B2/f.c.c. microstructure (up to 5.5 µm after 50 h at 1273 K), but does notmore » lead to β-Mn precipitation. Interestingly, annealing at temperatures >1073 K delays the onset of β-Mn precipitation during subsequent anneals at lower temperatures. Coarsening the B2/f.c.c. lamellar structure by annealing at higher temperatures softens it and leads to increases in ductility from fracture before yield to ~8 % elongation. Finally, the presence of β-Mn precipitates makes the very fine, brittle B2/f.c.c. microstructures even more brittle, but significant ductility (8.4 % elongation) is possible even with β-Mn precipitates present if the B2/f.c.c. matrix is coarse and, hence, more ductile.« less

Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kusworo, T. D., E-mail: tdkusworo@che.undip.ac.id; Aryanti, N., E-mail: nita.aryanti@gmail.com; Firdaus, M. M. H.

2015-12-29

This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fouriermore » Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second.« less

Structural evolution of tunneling oxide passivating contact upon thermal annealing.

PubMed

Choi, Sungjin; Min, Kwan Hong; Jeong, Myeong Sang; Lee, Jeong In; Kang, Min Gu; Song, Hee-Eun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan; Kim, Ka-Hyun

2017-10-16

We report on the structural evolution of tunneling oxide passivating contact (TOPCon) for high efficient solar cells upon thermal annealing. The evolution of doped hydrogenated amorphous silicon (a-Si:H) into polycrystalline-silicon (poly-Si) by thermal annealing was accompanied with significant structural changes. Annealing at 600 °C for one minute introduced an increase in the implied open circuit voltage (V oc ) due to the hydrogen motion, but the implied V oc decreased again at 600 °C for five minutes. At annealing temperature above 800 °C, a-Si:H crystallized and formed poly-Si and thickness of tunneling oxide slightly decreased. The thickness of the interface tunneling oxide gradually decreased and the pinholes are formed through the tunneling oxide at a higher annealing temperature up to 1000 °C, which introduced the deteriorated carrier selectivity of the TOPCon structure. Our results indicate a correlation between the structural evolution of the TOPCon passivating contact and its passivation property at different stages of structural transition from the a-Si:H to the poly-Si as well as changes in the thickness profile of the tunneling oxide upon thermal annealing. Our result suggests that there is an optimum thickness of the tunneling oxide for passivating electron contact, in a range between 1.2 to 1.5 nm.

The Reduction of TED in Ion Implanted Silicon

NASA Astrophysics Data System (ADS)

Jain, Amitabh

2008-11-01

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 °C and the time spent within 50 °C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 °C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the needs of future technology nodes. We have implemented millisecond annealing using a carbon dioxide laser to support high-volume manufacturing of 65 nm microprocessors and system-on-chip products. We further show how the use of molecular ion implantation to produce amorphousness followed by laser annealing to produce solid phase epitaxial regrowth results in junctions that meet the shallow depth and abruptness requirements of the 32 nm node.

The effects of annealing on the microstructure and mechanical properties of Fe 28Ni 18Mn 33Al 21

DOE PAGES

Meng, Fanling; Qiu, Jingwen; Baker, Ian; ...

2015-08-20

In this paper, As-cast Fe 28Ni 18Mn 33Al 21, which consists of aligned, 50 nm, (Ni, Al)-rich B2, and (Fe, Mn)-rich f.c.c. phases, was annealed at a variety of temperatures up to 1423 K and the microstructure and mechanical properties were examined. It was shown that the as-cast microstructure arises from a eutectoid transformation at ~1300 K. Annealing at temperatures ≤1073 K produces β-Mn-structured precipitates and hardness values up to 816 HV, while annealing at temperatures >1073 K leads to dramatic coarsening of the two-phase B2/f.c.c. microstructure (up to 5.5 µm after 50 h at 1273 K), but does notmore » lead to β-Mn precipitation. Interestingly, annealing at temperatures >1073 K delays the onset of β-Mn precipitation during subsequent anneals at lower temperatures. Coarsening the B2/f.c.c. lamellar structure by annealing at higher temperatures softens it and leads to increases in ductility from fracture before yield to ~8 % elongation. Finally, the presence of β-Mn precipitates makes the very fine, brittle B2/f.c.c. microstructures even more brittle, but significant ductility (8.4 % elongation) is possible even with β-Mn precipitates present if the B2/f.c.c. matrix is coarse and, hence, more ductile.« less

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Feigelson, Boris N.; Anderson, Travis J.

2014-08-14

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at halfmore » maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.« less

Dislocation Density Reduction in Cadmium Telluride and Mercury Cadmium Telluride Grown on Silicon Using Thermal Cycle Annealing

NASA Astrophysics Data System (ADS)

Farrell, Stuart Bennett

Mercury Cadmium Telluride (HgCdTe) is a material of great importance for infrared focal plane array applications. In order to produce large format detector arrays this material needs to be grown on a large area substrate, with silicon being the most mature substrate, it is the optimal choice for large format arrays. To help mitigate the effect of the lattice mismatch between the two materials, cadmium telluride (CdTe) is used as a buffer layer. The CdTe itself has nearly the same lattice mismatch (19.3%) to silicon, but due to the technological advantages it offers and compatibility with HgCdTe, it is the best buffer layer choice. The lattice mismatch between HgCdTe/CdTe and the silicon substrate leads to the formation of dislocations at densities in the mid 106 to low 107 cm-2 range in the epilayers. Such a high dislocation density greatly effects detector device performance quantities such as operability and sensitivity. Hence, the dislocation density should be brought down by at least an order of magnitude by adopting novel in situ and ex situ material processing techniques. In this work, in situ and ex situ thermal cycle annealing (TCA) methods have been used to decrease dislocation density in CdTe and HgCdTe. During the molecular beam epitaxial (MBE) growth of the CdTe buffer layer, the growth was interrupted and the layer was subjected to an annealing cycle within the growth chamber under tellurium overpressure. During the annealing cycle the temperature is raised to beyond the growth temperature (290 → 550 °C) and then allowed to cool before resuming growth again. This process was repeated several times during the growth. After growth, a portion of the material was subjected to a dislocation decoration etch in order to count the etch pit density (EPD) which has a direct correspondence with the dislocation density in the crystal. The crystalline quality was also characterized by x-ray diffraction rocking curves and photoluminescence. The in situ TCA resulted in almost a two order of magnitude reduction in the dislocation density, and factor of two reduction in the full width at half maximum of the x-ray rocking curves. Photoluminescence also suggested a decrease in the number of dislocations present in the material. This decrease is attributed to the movement of the dislocations during the annealing cycles and their subsequent interaction and annihilation. To decrease the dislocation density in HgCdTe layers grown on CdTe/Si composite substrates, ex situ TCA has been performed in a sealed quartz ampoule under a mercury overpressure in a conventional clam-shell furnace. The reduction in the dislocation density has been studied as a function of growth/annealing parameters such as the initial (as grown) dislocation density, buffer layer quality, Hg overpressure, annealing temperature, annealing duration, and the number of annealing cycles. It was found that the primary parameters that affect dislocation density reduction are the annealing temperature and the number of annealing cycles. Some secondary affects were observed by varying the duration spent at the maximum annealing temperature. Parameters such as the initial dislocation density and buffer layer quality did not play a significant role in dislocation reduction. Though no correlation between Hg overpressure and dislocation density was found, it did play a vital role in maintaining the quality of the surface. By using the ex situ TCA, a dislocation density of 1 x 106 cm-2 could be reliably and consistently achieved in HgCdTe layers that had a starting density ranging from 0.5 -- 3 x 107 cm-2. Examination of the annealing parameters revealed an exponential decay in the dislocation density as a function of increasing number of annealing cycles. In addition, a similar exponential decay was observed between the dislocation density and the annealing temperature. The decrease in the dislocation density is once again attributed to moving dislocations that interact and annihilate. This behavior was modeled using a second order reaction equation. It was found that the results of the model closely agreed with the experimental values for a wide range of annealing temperatures and number of annealing cycles.

Cu(In,Ga)Se2 thin films annealed using a continuous wave Nd:YAG laser (λ0 = 532 nm): Effects of laser-annealing time

NASA Astrophysics Data System (ADS)

Yoo, Myoung Han; Ko, Pil Ju; Kim, Nam-Hoon; Lee, Hyun-Yong

2017-12-01

Preparation of Cu(In,Ga)Se2 (CIGS) thin films has continued to face problems related to the selenization of sputtered Cu-In-Ga precursors when using H2Se vapor in that the materials are highly toxic and the facilities extremely costly. Another obstacle facing the production of CIGS thin films has been the required annealing temperature, as it relates to the decomposition temperature of a typical flexible polymer substrate. A novel laser-annealing process for CIGS thin films, which does not involve the selenization process and which can be performed at a lower temperature, has been proposed. Following sputtering with a Cu0.9In0.7Ga0.3Se2 target, the laser-annealing of the CIGS thin film was performed using a continuous 532-nm Nd:YAG laser with an annealing time of 200 - 1000 s at a laser optical power of 2.75 W. CIGS chalcopyrite (112), (220/204), and (312/116) phases, with some weak diffraction peaks corresponding to the Cu-Se- or the In-Se-related phases, were successfully obtained for all the CIGS thin films that had been laser-annealed at 2.75 W. The lattice parameters, the d-spacing, the tetragonal distortion parameter, and the strain led to the crystallinity being worse and grain size being smaller at 600 s while better crystallinity was obtained at 200 and 800 s, which was closely related to the deviations from molecularity and stoichiometry, which were greatest at 600 s while the values exhibited near-stoichiometric compositions at 200 and 800 s. The band gaps of the laser-annealed CIGS thin films were within a range of 1.765 - 1.977 eV and depended on the internal stress. The mean absorbance of the laser-annealed CIGS thin films was within a range of 1.598 - 1.900, suggesting that approximately 97.47 - 98.74% of the incident photons in the visible spectral region were absorbed by this 400-nm film. The conductivity types exhibited the same deviations (Δ m > 0 and Δ s < 0) in all the laser-annealed CIGS thin films. After laser-annealing, the resistivity fell abruptly to a range of 3.551 × 10 -2 - 1.022 × 10 -1 Ω·cm. The carrier concentration was on the order of 1019 - 1021 cm -3, and the carrier mobility was 5.7 × 10 -2 - 5.7 × 100 cm2/V·s.

The induction of nanographitic phase on Fe coated diamond films for the enhancement in electron field emission properties

NASA Astrophysics Data System (ADS)

Panda, Kalpataru; Sundaravel, B.; Panigrahi, B. K.; Chen, H.-C.; Huang, P.-C.; Shih, W.-C.; Lo, S.-C.; Lin, L.-J.; Lee, C.-Y.; Lin, I.-N.

2013-03-01

A thin layer of iron coating and subsequent post-annealing (Fe-coating/post-annealing) is seen to significantly enhance the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films. The best EFE properties, with a turn on field (E0) of 1.98 V/μm and current density (Je) of 705 μA/cm2 at 7.5 V/μm, are obtained for the films, which were Fe-coated/post-annealed at 900 °C in H2 atmosphere. The mechanism behind the enhanced EFE properties of Fe coated/post-annealed UNCD films are explained by the microstructural analysis which shows formation of nanographitic phase surrounding the Fe (or Fe3C) nanoparticles. The role of the nanographitic phase in improving the emission sites of Fe coated/post-annealed UNCD films is clearly revealed by the current imaging tunneling spectroscopy (CITS) images. The CITS images clearly show significant increase in emission sites in Fe-coated/post-annealed UNCD films than the as-deposited one. Enhanced emission sites are mostly seen around the boundaries of the Fe (or Fe3C) nanoparticles which were formed due to the Fe-coating/post-annealing processes. Moreover, the Fe-coating/post-annealing processes enhance the EFE properties of UNCD films more than that on the microcrystalline diamond films. The authentic factor, resulting in such a phenomenon, is attributed to the unique granular structure of the UNCD films. The nano-sized and uniformly distributed grains of UNCD films, resulted in markedly smaller and densely populated Fe-clusters, which, in turn, induced more finer and higher populated nano-graphite clusters.

U-Pb isotopic systematics of shock-loaded and annealed baddeleyite: Implications for crystallization ages of Martian meteorite shergottites

NASA Astrophysics Data System (ADS)

Niihara, Takafumi; Kaiden, Hiroshi; Misawa, Keiji; Sekine, Toshimori; Mikouchi, Takashi

2012-08-01

Shock-recovery and annealing experiments on basalt-baddeleyite mixtures were undertaken to evaluate shock effects on U-Pb isotopic systematics of baddeleyite. Shock pressures up to 57 GPa caused fracturing of constituent phases, mosaicism of olivine, maskelynitization of plagioclase, and melting, but the phase transition from monoclinic baddeleyite structure to high-pressure/temperature polymorphs of ZrO2 was not confirmed. The U-Pb isotopic systems of the shock-loaded baddeleyite did not show a large-scale isotopic disturbance. The samples shock-recovered from 47 GPa were then employed for annealing experiments at 1000 or 1300 °C, indicating that the basalt-baddeleyite mixture was almost totally melted except olivine and baddeleyite. Fine-grained euhedral zircon crystallized from the melt was observed around the relict baddeleyite in the sample annealed at 1300 °C for 1 h. The U-Pb isotopic systems of baddeleyite showed isotopic disturbances: many data points for the samples annealed at 1000 °C plotted above the concordia. Both radiogenic lead loss/uranium gain and radiogenic lead gain/uranium loss were observed in the baddeleyite annealed at 1300 °C. Complete radiogenic lead loss due to shock metamorphism and subsequent annealing was not observed in the shock-loaded/annealed baddeleyites studied here. These results confirm that the U-Pb isotopic systematics of baddeleyite are durable for shock metamorphism. Since shergottites still preserve Fe-Mg and/or Ca zonings in major constituent phases (i.e. pyroxene and olivine), the shock effects observed in Martian baddeleyites seem to be less intense compared to that under the present experimental conditions. An implication is that the U-Pb systems of baddeleyite in shergottites will provide crystallization ages of Martian magmatic rocks.

Effect of annealing temperature on microstructure and superelastic properties of a Ti-18Zr-4.5Nb-3Sn-2Mo alloy.

PubMed

Fu, Jie; Kim, Hee Young; Miyazaki, Shuichi

2017-01-01

In this study a new superelastic Ti-18Zr-4.5Nb-3Sn-2Mo alloy was prepared by adding 2at% of Mo as a substitute for Nb to the Ti-18Zr-11Nb-3Sn alloy, and heat treatment at different temperatures was conducted. The temperature dependence of superelasticity and annealing texture was investigated. Texture showed a dependence of annealing temperature: the specimen annealed at 923K for 0.3ks exhibited {113} β <47¯1> β type texture which was similar to the deformation texture, while specimens annealed at 973, 1073K, and 1173K showed {001} β <110> β type recrystallization texture which was preferable for recovery strain. The largest recovery strain of 6.2%, which is the same level as that of the Ti-18Zr-11Nb-3Sn alloy, was obtained in the specimen annealed at 1173K for 0.3ks due to the well-developed {001} β <110> β type recrystallization texture. The Ti-18Zr-3Nb-3Sn-2Mo alloy presented a higher tensile strength compared with the Ti-18Zr-11Nb-3Sn alloy when heat treated at 1173K for 0.3ks, which was due to the solid solution strengthening effect of Mo. Annealing at 923K for 0.3ks was effective in obtaining a good combination of a high strength as 865MPa and a large recovery strain as 5.6%. The high recovery strain was due to the high stress at which the maximum recovery stain was obtained which was attributed to the small grain size formed at low annealing temperature. Copyright © 2016 Elsevier Ltd. All rights reserved.

Observation of glassy state relaxation during annealing of frozen sugar solutions by X-ray computed tomography.

PubMed

Nakagawa, Kyuya; Tamiya, Shinri; Do, Gabsoo; Kono, Shinji; Ochiai, Takaaki

2018-06-01

Glassy phase formation in a frozen product determines various properties of the freeze-dried products. When an aqueous solution is subjected to freezing, a glassy phase forms as a consequence of freeze-concentration. During post-freezing annealing, the relaxation of the glassy phase and the ripening of ice crystals (i.e. Ostwald ripening) spontaneously occur, where the kinetics are controlled by the annealing and glass transition temperatures. This study was motivated to observe the progress of glassy state relaxation separate from ice coarsening during annealing. X-ray computed tomography (CT) was used to observe a frozen and post-freezing annealed solutions by using monochromatized X-ray from the synchrotron radiation. CT images were successfully obtained, and the frozen matrix were analyzed based on the gray level values that were equivalent to the linear X-ray attenuation coefficients of the observed matters. The CT images obtained from rapidly frozen sucrose and dextrin solutions with different concentrations gave clear linear relationships between the linear X-ray attenuation coefficients values and the solute concentrations. It was confirmed that the glassy state relaxation progressed as increasing annealing time, and this trend was larger in the order of the glass transition temperature of the maximally freeze-concentrated phase. The sucrose-water system required nearly 20 h of annealing time at -5 °C for the completion of the glassy phase relaxation, whereas dextrin-water systems required much longer periods because of their higher glass transition temperatures. The trends of ice coarsening, however, did not perfectly correspond to the trends of the relaxation, suggesting that the glassy phase relaxation and Ostwald ripening would jointly control the ice crystal growth/ripening kinetics, and the dominant mechanism differed by the annealing stage. Copyright © 2018 Elsevier B.V. All rights reserved.

Microstructure evolution of the Ir-inserted Ni silicides with additional annealing

NASA Astrophysics Data System (ADS)

Yoon, Kijeong; Song, Ohsung

2009-02-01

Thermally-evaporated 10 nm-Ni/1 nm-Ir/(poly)Si structures were fabricated in order to investigate the thermal stability of Ir-inserted nickel silicide after additional annealing. The silicide samples underwent rapid thermal annealing at 300 ° C to 1200 ° C for 40 s, followed by 30 min annealing at the given RTA temperatures. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates, mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution x-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope were used to determine the cross-section structure and surface roughness. The silicide, which formed on single crystal silicon substrate with surface agglomeration after additional annealing, could defer the transformation of Ni(Ir)Si to Ni(Ir)Si2 and was stable at temperatures up to 1200 °C. Moreover, the silicide thickness doubled. There were no outstanding changes in the silicide thickness on polycrystalline silicon. However, after additional annealing, the silicon-silicide mixing became serious and showed high resistance at temperatures >700 °C. Auger depth profiling confirmed the increased thickness of the silicide layers after additional annealing without a change in composition. For a single crystal silicon substrate, the sheet resistance increased slightly due to the significant increases in surface roughness caused by surface agglomeration after additional annealing. Otherwise, there were almost no changes in surface roughness on the polycrystalline silicon substrate. The Ir-inserted nickel monosilicide was able to maintain a low resistance in a wide temperature range and is considered suitable for the nano-thick silicide process.

Effect of annealing procedure on the bonding of ceramic to cobalt-chromium alloys fabricated by rapid prototyping.

PubMed

Tulga, Ayca

2018-04-01

An annealing procedure is a heat treatment process to improve the mechanical properties of cobalt-chromium (Co-Cr) alloys. However, information is lacking about the effect of the annealing process on the bonding ability of ceramic to Co-Cr alloys fabricated by rapid prototyping. The purpose of this in vitro study was to evaluate the effects of the fabrication techniques and the annealing procedure on the shear bond strength of ceramic to Co-Cr alloys fabricated by different techniques. Ninety-six cylindrical specimens (10-mm diameter, 10-mm height) made of Co-Cr alloy were prepared by casting (C), milling (M), direct process powder-bed (LaserCUSING) with and without annealing (CL+, CL), and direct metal laser sintering (DMLS) with annealing (EL+) and without annealing (EL). After the application of ceramic to the metal specimens, the metal-ceramic bond strength was assessed using a shear force test at a crosshead speed of 0.5 mm/min. Shear bond strength values were statistically analyzed by 1-way ANOVA and Tukey multiple comparison tests (α=.05). Although statistically significant differences were found among the 3 groups (M, 29.87 ±2.06; EL, 38.92 ±2.04; and CL+, 40.93 ±2.21; P=.002), no significant differences were found among the others (P>.05). The debonding surfaces of all specimens exhibited mixed failure mode. These results showed that the direct process powder-bed method is promising in terms of metal-ceramic bonding ability. The manufacturing technique of Co-Cr alloys and the annealing process influence metal-ceramic bonding. Copyright © 2017 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

An Efficient, Affordable Optically Stimulated Luminescent (OSL) Annealer.

PubMed

Abraham, Sara A; Frank, Samuel J; Kearfott, Kimberlee J

2017-07-01

Optically stimulated luminescent (OSL) dosimeters are devices used for measuring doses of ionizing radiation. Signal is stored within an OSL material so that when stimulated with light, light of a specific wavelength is emitted in proportion to the integrated ionizing radiation dose. Each interrogation of the material results in the loss of a small fraction of signal, thus allowing multiple interrogations leading to more accurate measurements of dose. In order to reuse a dosimeter, the residual signals from prior doses must be taken into account and subtracted from current readings, adding uncertainty to any future measurements. To reduce these errors when they become large, it is desirable to completely clear the stored signal or anneal the dosimeter. Traditionally, heating the material has accomplished this. In a commercially available dosimeter badge system, the OSL material Al2O3:C is incorporated into a plastic slide that would melt at the necessary high temperatures, which can reach 900 °C, required for annealing. Fortunately, due to the material's high sensitivity to light, OSLs can be optically annealed instead. In order to do this, an affordable OSL dosimeter annealer was designed with inexpensive, exchangeable blue, green, and white high intensity light-emitting diodes (LEDs). Several dosimeters were repeatedly annealed for recorded intervals and then read out. A single dosimeter was partially annealed through repeated interrogations with the LED array from a commercial reader. The signal loss due to the exposure to each light was analyzed to determine the practicality and efficiency of each color. The rate and extent of signal loss was dependent not only on the spectrum of annealing light but on the initial signal levels as well. These findings suggest that blue LEDs are the most promising for effective and rapid clearing of the OSL material Al2O3:C.

Enhanced antiadhesive properties of chitosan/hyaluronic acid polyelectrolyte multilayers driven by thermal annealing: Low adherence for mammalian cells and selective decrease in adhesion for Gram-positive bacteria.

PubMed

Muzzio, Nicolás E; Pasquale, Miguel A; Diamanti, Eleftheria; Gregurec, Danijela; Moro, Marta Martinez; Azzaroni, Omar; Moya, Sergio E

2017-11-01

The development of antifouling coatings with restricted cell and bacteria adherence is fundamental for many biomedical applications. A strategy for the fabrication of antifouling coatings based on the layer-by-layer assembly and thermal annealing is presented. Polyelectrolyte multilayers (PEMs) assembled from chitosan and hyaluronic acid were thermally annealed in an oven at 37°C for 72h. The effect of annealing on the PEM properties and topography was studied by atomic force microscopy, ζ-potential, circular dichroism and contact angle measurements. Cell adherence on PEMs before and after annealing was evaluated by measuring the cell spreading area and aspect ratio for the A549 epithelial, BHK kidney fibroblast, C2C12 myoblast and MC-3T3-E1 osteoblast cell lines. Chitosan/hyaluronic acid PEMs show a low cell adherence that decreases with the thermal annealing, as observed from the reduction in the average cell spreading area and more rounded cell morphology. The adhesion of S. aureus (Gram-positive) and E. coli (Gram-negative) bacteria strains was quantified by optical microscopy, counting the number of colony-forming units and measuring the light scattering of bacteria suspension after detachment from the PEM surface. A 20% decrease in bacteria adhesion was selectively observed in the S. aureus strain after annealing. The changes in mammalian cell and bacteria adhesion correlate with the changes in topography of the chitosan/hyaluronic PEMs from a rough fibrillar 3D structure to a smoother and planar surface after thermal annealing. Copyright © 2017. Published by Elsevier B.V.

Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.

2008-01-01

BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

Post Deformation Annealing Behaviour of Mg-Al-Sn Alloys

NASA Astrophysics Data System (ADS)

Kabir, Abu Syed Humaun; Su, Jing; Sanjari, Mehdi; Jung, In-Ho; Yue, Stephen

In this study, effects of dynamically formed precipitates on the microstructure and texture evolutions were investigated after the post deformation annealing for various times. Two ternary alloys of Mg, Al and Sn were designed, produced and deformed at 300°C at a strain rate of 0.01s-1 to form different amounts of strain induced precipitates during deformation. Subsequent annealing at deformation temperature was performed for up to 4 hours. Microstructures and precipitation were investigated by optical and scanning electron microscopes and macro and micro-texture were measured by X-ray diffraction (XRD) and Electron Back-Scattered Diffraction (EBSD) techniques, respectively. It was found that certain amount of strain induced precipitates was necessary to prevent grain growth for a certain time during annealing by grain boundary pinning effect. Also, texture randomization was possible with the presence of precipitates after certain time of annealing.

Strong emission in Yb3+/Er3+ co-doped phosphate glass ceramics

NASA Astrophysics Data System (ADS)

Liu, Yanling; Song, Feng; Jia, Guozhi; Zhang, Yanbang; Tang, Yi

Yb3+/Er3+ co-doped phosphate glass and glass ceramics were prepared by high-temperature melting method. The X-ray diffraction, transmission electron micrographs, up-conversion and infrared emissions, photothermal conversion properties of the samples have been measured. The results showed the annealing time had a great impact on the microstructure and luminous performance of the phosphate glass. At the beginning of annealing, the metaphosphate crystals were firstly dissolved out. The metaphosphate crystals gradually turned into the orthophosphate with the increasing of annealing time. The emission intensity of the sample was obviously improved after the precursor glass was annealed. The up-conversion and infrared emissions of the sample annealed at 600 °C for 24 h, reached the maximum intensity. Compared with the photothermal properties of glass, the lower photothermal conversion efficiency of the glass ceramics testified the strong emission.

IGZO TFT-based circuit with tunable threshold voltage by laser annealing

NASA Astrophysics Data System (ADS)

Huang, Xiaoming; Yu, Guang; Wu, Chenfei

2017-11-01

In this work, a high-performance inverter based on amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) has been fabricated, which consists of a driver TFT and a load TFT. The threshold voltage (Vth) of the load TFT can be tuned by applying an area-selective laser annealing. The transfer curve of the load TFT shows a parallel shift into the negative bias direction upon laser annealing. Based on x-ray photoelectron spectroscopy analyses, the negative Vth shift can be attributed to the increase of oxygen vacancy concentration within the device channel upon laser irradiation. Compared to the untreated inverter, the laser annealed inverter shows much improved switching characteristics, including a large output swing range which is close to full swing, as well as an enhanced output voltage gain. Furthermore, the dynamic performance of ring oscillator based on the laser-annealed inverter is improved.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

PubMed

Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

2014-12-24

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

Growth mechanism of extension twin variants during annealing of pure magnesium: An ‘ex situ’ electron backscattered diffraction investigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sabat, R.K.

Pure magnesium was subjected to plastic deformation through CSM (continuous stiffness measurement) indentation followed by annealing at 200 °C for 30 min. Nucleation of no new grains was observed neither at the twin–twin intersections nor at the multiple twin variants of a grain after annealing. Significant growth of off-basal twin orientation compared to basal twin orientation was observed in the sample after annealing and is attributed to the partial coherent nature of twin boundary in the later case. Further, growth of twins was independent of the strain distribution between parent and twinned grains. - Highlights: • An ‘ex situ’ EBSDmore » of pure Mg during annealing was investigated. • Nucleation of no new grains was observed. • Significant growth of off-basal twin orientation was observed. • Growth of twins may be attributed to the partial coherent nature of twin boundary.« less

Antimony-Doped Tin Oxide Thin Films Grown by Home Made Spray Pyrolysis Technique

NASA Astrophysics Data System (ADS)

Yusuf, Gbadebo; Babatola, Babatunde Keji; Ishola, Abdulahi Dimeji; Awodugba, Ayodeji O.; Solar cell Collaboration

2016-03-01

Transparent conducting antimony-doped tin oxide (ATO) films have been deposited on glass substrates by home made spray pyrolysis technique. The structural, electrical and optical properties of the ATO films have been investigated as a function of Sb-doping level and annealing temperature. The optimum target composition for high conductivity and low resistivity was found to be 20 wt. % SnSb2 + 90 wt. ATO. Under optimized deposition conditions of 450oC annealing temperature, electrical resistivity of 5.2×10-4 Ω -cm, sheet resistance of 16.4 Ω/sq, average optical transmittance of 86% in the visible range, and average optical band-gap of 3.34eV were obtained. The film deposited at lower annealing temperature shows a relatively rough, loosely bound slightly porous surface morphology while the film deposited at higher annealing temperature shows uniformly distributed grains of greater size. Keywords: Annealing, Doping, Homemade spray pyrolysis, Tin oxide, Resistivity

Effect of annealing temperature on optical and electrical properties of ZrO2-SnO2 based nanocomposite thin films

NASA Astrophysics Data System (ADS)

Anitha, V. S.; Lekshmy, S. Sujatha; Berlin, I. John; Joy, K.

2014-01-01

Transparent nanocomposite ZrO2-SnO2 thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO2-SnO2 films can be used in many applications and in optoelectronic devices.

Structure and phase composition of ultrafine-grained TiNb alloy after high-temperature annealings

NASA Astrophysics Data System (ADS)

Eroshenko, Anna Yu.; Glukhov, Ivan A.; Mairambekova, Aikol; Tolmachev, Alexey I.; Sharkeev, Yurii P.

2017-12-01

The paper presents the experimental data observed in the microstructure and phase composition of ultrafine-grained Ti-40 mass % Nb (Ti40Nb) alloy after high-temperature annealings. The ultrafine-grained Ti40Nb alloy is produced by severe plastic deformation (SPD). This method includes multiple abc-pressing and multi-pass rolling followed by further pre-recrystallizing annealing which, in its turn, enhances the formation of ultrafine-grained structures with mean size of 0.28 µm involving stable β- and α-phase and metastable nanosized ω-phase in the alloy. It is shown that annealing at 500°C preserves the ultrafine-grained structure and phase composition. In cases of annealing at 800°C the ultrafine-grained state transforms into the coarse-grained state. The stable β-phase and the nanosized metastable ω-phase have been identified in the coarse-grained structure.

Annealing of gallium nitride under high-N 2 pressure

NASA Astrophysics Data System (ADS)

Porowski, S.; Jun, J.; Krukowski, S.; Grzegory, I.; Leszczynski, M.; Suski, T.; Teisseyre, H.; Foxon, C. T.; Korakakis, D.

1999-04-01

GaN is the key material for blue and ultraviolet optoelectronics. It is a strongly bonded wurztite structure semiconductor with the direct energy gap 3.5 eV. Due to strong bonding, the diffusion processes require high temperatures, above 1300 K. However at this temperature range at ambient pressure, GaN becomes unstable and dissociates into Ga and N 2. Therefore high pressure of N 2 is required to study the diffusion and other annealing related processes. We studied annealing of bulk GaN nitride single crystals grown under high pressure and also annealing of homo- and heteroepitaxial GaN layers grown by MOCVD technique. Annealing at temperatures above 1300 K influences strongly the structural and optical properties of GaN crystals and layers. At this temperature diffusion of the Mg and Zn acceptors have been observed. In spite of very interesting experimental observations the understanding of microscopic mechanisms of these processes is limited.

Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdullin, Kh. A.; Gabdullin, M. T.; Gritsenko, L. V.

The photoluminescence and optical absorption spectra and electrical properties of ZnO films grown by the metal–organic chemical vapor deposition and hydrothermal techniques, subjected to heat treatments and plasma treatment in a hydrogen atmosphere, are studied. It is shown that the adsorption of oxygen at grain boundaries upon annealing in an oxidizing atmosphere determines the electrical properties of the films. Vacuum annealing improves the electrical properties of the samples after degradation induced by annealing in air. Treatment in hydrogen plasma passivates surface states at the grain boundaries. The intrinsic photoluminescence intensity after plasma treatment is higher in the case of increasedmore » amounts of oxygen adsorbed at grain surfaces upon annealing in air. Surface states involving oxygen and hydrogen atoms are responsible for the high-intensity intrinsic photoluminescence band.« less

Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

NASA Technical Reports Server (NTRS)

Draper, Susan L.

1987-01-01

Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

Microstructure Changes of Plasma Spraying Tungsten Coatings on Cfc after Different Temperature Annealing

NASA Astrophysics Data System (ADS)

Liu, X.; Tamura, S.; Tokunaga, K.; Yoshida, N.; Noda, N.

2003-06-01

Thermal behaviors of tungsten coating of 0.5 mm thick with multi-layers interface of tungsten (W) and rhenium (Re) coated on CFC (CX-2002U) substrate by vacuum plasma spraying (VPS) technique were examined by annealing with an electron beam thermal load facility between 1200 °C and 2000 °C. Change of the microstructure was observed and its chemical composition was analyzed by EDS after annealing. It was observed that remarkable recrystallization of VPS-W occurred above 1400 °C. The structure of the multi-layers of W and Re become obscure by the mutual diffusion of W, Re and C above 1600°C and finally disappeared after annealing at 2000 °C for one hour. Very hard tungsten carbides are formed at the interface above 1600 °C and they were broadening with increasing annealing temperature and time.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence

PubMed Central

Aslan, Kadir; Malyn, Stuart N.; Zhang, Yongxia; Geddes, Chris D.

2008-01-01

We report the effects of thermally annealing, non-, just-, and thick continuous silver films for their potential applications in metal-enhanced fluorescence, a near-field concept which can alter the free-space absorption and emissive properties of close-proximity fluorophores (excited states). We have chosen to anneal a noncontinuous particulate film 5 nm thick and two thicker continuous films, 15 and 25 nm thick, respectively. Our results show that the annealing of the 25 nm film has little effect on close-proximity fluorescence when coated with a monolayer of fluorophore-labeled protein. However, the 15 nm continuous film cracks upon annealing, producing large nanoparticles which are ideal for enhancing the fluorescence of close-proximity fluorophores that are indeed difficult to prepare by other wet-chemical deposition processes. The annealing of 5 nm noncontinuous particulate films (a control sample) has little influence on metal-enhanced fluorescence, as expected. PMID:19479004

Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence.

PubMed

Aslan, Kadir; Malyn, Stuart N; Zhang, Yongxia; Geddes, Chris D

2008-04-15

We report the effects of thermally annealing, non-, just-, and thick continuous silver films for their potential applications in metal-enhanced fluorescence, a near-field concept which can alter the free-space absorption and emissive properties of close-proximity fluorophores (excited states). We have chosen to anneal a noncontinuous particulate film 5 nm thick and two thicker continuous films, 15 and 25 nm thick, respectively. Our results show that the annealing of the 25 nm film has little effect on close-proximity fluorescence when coated with a monolayer of fluorophore-labeled protein. However, the 15 nm continuous film cracks upon annealing, producing large nanoparticles which are ideal for enhancing the fluorescence of close-proximity fluorophores that are indeed difficult to prepare by other wet-chemical deposition processes. The annealing of 5 nm noncontinuous particulate films (a control sample) has little influence on metal-enhanced fluorescence, as expected.

Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

NASA Astrophysics Data System (ADS)

Wang, D. D.; Chen, Z. Q.; Li, C. Y.; Li, X. F.; Cao, C. Y.; Tang, Z.

2012-07-01

High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

NASA Astrophysics Data System (ADS)

Yildirim, Nezir; Turut, Abdulmecit; Dogan, Hulya

The Schottky barrier type Ni/n-GaAs contacts fabricated by us were thermally annealed at 600∘C and 700∘C for 1min. The apparent barrier height Φap and ideality factor of the diodes were calculated from the forward bias current-voltage characteristic in 60-320K range. The Φap values for the nonannealed and 600∘C and 700∘C annealed diodes were obtained as 0.80, 0.81 and 0.67eV at 300K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700∘C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the Φap versus (2kT)‑1 plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

Improvement of Ohmic contacts on Ga 2O 3 through use of ITO-interlayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carey, Patrick H.; Yang, Jiancheng; Ren, Fan

In this work, the use of ITO interlayers between Ga 2O 3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga 2O 3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10 -5 Ω cm 2 were achievedmore » after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga 2O 3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.« less

Studies of Oxidation of the Cu(100) Surface Using Low Energy Positrons

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Maddox, W. B.; Nadesalingam, M.; Rajeshwar, K.; Weiss, A. H.

2009-03-01

Changes in the surface of an oxidized Cu(100) single crystal resulting from vacuum annealing have been investigated using positron annihilation induced Auger electron spectroscopy (PAES). PAES measurements show a large increase in the intensity of the positron annihilation induced Cu M2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300° C. The intensity then decreases monotonically as the annealing temperature is increased to ˜600° C. Experimental PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface, surface reconstructions, and electron-positron correlations effects. Possible explanation for the observed behavior of the intensity of positron annihilation induced Cu M2,3VV Auger peak with changes of the annealing temperature is proposed.

Studies of oxidation of the Cu(100) surface using low energy positrons.

NASA Astrophysics Data System (ADS)

Maddox, W. B.; Fazleev, N. G.; Weiss, A. H.

2009-03-01

Changes in the surface of an oxidized Cu(100) single crystal resulting from vacuum annealing have been investigated using positron annihilation induced Auger electron spectroscopy (PAES). PAES measurements show a large increase in the intensity of the positron annihilation induced Cu M2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300^o C. The intensity then decreases monotonically as the annealing temperature is increased to ˜600^o C. Experimental PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface, surface reconstructions, and electron-positron correlations effects. Possible explanation for the observed behavior of the intensity of positron annihilation induced Cu M2,3VV Auger peak with changes of the annealing temperature is proposed.

Improving aluminum particle reactivity by annealing and quenching treatments: Synchrotron X-ray diffraction analysis of strain

DOE PAGES

McCollum, Jena; Pantoya, Michelle L.; Tamura, Nobumichi

2015-11-06

In bulk material processing, annealing and quenching metals such as aluminum (Al) can improve mechanical properties. On a single particle level, affecting mechanical properties may also affect Al particle reactivity. Our study examines the effect of annealing and quenching on the strain of Al particles and the corresponding reactivity of aluminum and copper oxide (CuO) composites. Micron-sized Al particles were annealed and quenched according to treatments designed to affect Al mechanical properties. Furthermore, synchrotron X-ray diffraction (XRD) analysis of the particles reveals that thermal treatment increased the dilatational strain of the aluminum-core, alumina-shell particles. Flame propagation experiments also show thermalmore » treatments effect reactivity when combined with CuO. An effective annealing and quenching treatment for increasing aluminum reactivity was identified. Our results show that altering the mechanical properties of Al particles affects their reactivity.« less

Displacement cascades and defect annealing in tungsten, Part II: Object kinetic Monte Carlo Simulation of Tungsten Cascade Aging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandipati, Giridhar; Setyawan, Wahyu; Heinisch, Howard L.

2015-07-01

The results of object kinetic Monte Carlo (OKMC) simulations of the annealing of primary cascade damage in bulk tungsten using a comprehensive database of cascades obtained from molecular dynamics (Setyawan et al.) are described as a function of primary knock-on atom (PKA) energy at temperatures of 300, 1025 and 2050 K. An increase in SIA clustering coupled with a decrease in vacancy clustering with increasing temperature, in addition to the disparate mobilities of SIAs versus vacancies, causes an interesting effect of temperature on cascade annealing. The annealing efficiency (the ratio of the number of defects after and before annealing) exhibitsmore » an inverse U-shape curve as a function of temperature. The capabilities of the newly developed OKMC code KSOME (kinetic simulations of microstructure evolution) used to carry out these simulations are described.« less

Effect of Annealing Temperature on Broad Luminescence of Silver-Exchanged Zeolites Y and A

NASA Astrophysics Data System (ADS)

Gui, Sa Chu Rong; Lin, H.; Bao, W.; Wang, W.

2018-05-01

The annealing temperature dependence of luminescence properties of silver (Ag)-exchanged zeolites Y and A was studied. It was found that the absorbance and excitation/emission bands are strongly affected by the thermal treatments. With increase in annealing temperature, the absorbance of Ag in zeolite Y increases at first and then decreases. However, the position of the excitation/emission band in zeolite Y was found to be insensitive to the annealing temperature. In contrast, the excitation/emission bands in zeolite A are particularly sensitive to the annealing temperature. The difference of such temperature dependence in zeolites Y and A may be due to the different microporous structure of the two minerals. Moreover, the fact that this dependence is not observed in Ag-exchanged zeolite Y is likely to be due to the difficulty in dehydration of zeolite Y in air or due to the weak Ag+-Ag+ interaction in zeolite Y.

The change of steel surface chemistry regarding oxygen partial pressure and dew point

NASA Astrophysics Data System (ADS)

Norden, Martin; Blumenau, Marc; Wuttke, Thiemo; Peters, Klaus-Josef

2013-04-01

By investigating the surface state of a Ti-IF, TiNb-IF and a MnCr-DP after several series of intercritical annealing, the impact of the annealing gas composition on the selective oxidation process is discussed. On behalf of the presented results, it can be concluded that not the general oxygen partial pressure in the annealing furnace, which is a result of the equilibrium reaction of water and hydrogen, is the main driving force for the selective oxidation process. It is shown that the amounts of adsorbed gases at the strip surface and the effective oxygen partial pressure resulting from the adsorbed gases, which is mainly dependent on the water content of the annealing furnace, is driving the selective oxidation processes occurring during intercritical annealing. Thus it is concluded, that for industrial applications the dew point must be the key parameter value for process control.

The effect of real-time aging on the oxidation and wear of highly cross-linked UHMWPE acetabular liners.

PubMed

Wannomae, Keith K; Christensen, Steven D; Freiberg, Andrew A; Bhattacharyya, Shayan; Harris, William H; Muratoglu, Orhun Kamil

2006-03-01

Irradiation decreases the wear of ultra-high molecular weight polyethylene (UHMWPE) but generates residual free radicals, precursors to long-term oxidation. Melting or annealing is used in quenching free radicals. We hypothesized that irradiated and once-annealed UHMWPE would oxidize while irradiated and melted UHMWPE would not, and that the oxidation in the former would increase wear. Acetabular liners were real-time aged by immersion in an aqueous environment that closely mimicked the temperature and oxygen concentration of synovial fluid. After 95 weeks of real-time aging, once-annealed components were oxidized; the melted components were not. The wear rate of the real-time aged irradiated and once-annealed components was higher than the literature reported values of other contemporary highly cross-linked UHMWPEs. Single annealing after irradiation used with terminal gamma sterilization may adversely affect the long-term oxidative stability of UHMWPE components.

Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

NASA Astrophysics Data System (ADS)

Wu, Shen; Sun, Aizhi; Zhai, Fuqiang; Wang, Jin; Zhang, Qian; Xu, Wenhuan; Logan, Philip; Volinsky, Alex A.

2012-03-01

This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites.

Optical properties of dip coated titanium-di-oxide (TiO2) thin films annealed at different temperatures

NASA Astrophysics Data System (ADS)

Biswas, Sayari; Kar, Asit Kumar

2018-02-01

Titanium dioxide (TiO2) thin films were synthesized by hydrothermal assisted sol-gel dip coating method on quartz substrate. The sol was prepared by hydrothermal method at 90 °C. Dip coating method was used to deposit the thin films. Later films were annealed at four different temperatures -600 °C, 800 °C, 1000 °C and 1200 °C. XRD study showed samples annealed at 600 °C are almost amorphous. At 800 °C, film turns into anatase phase and with further increment of annealing temperature they turn into rutile phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60% was observed in the visible region for the sample annealed at the lowest temperature. Band gap of the prepared films varies from 2.9 eV to 3.5 eV.

A noisy chaotic neural network for solving combinatorial optimization problems: stochastic chaotic simulated annealing.

PubMed

Wang, Lipo; Li, Sa; Tian, Fuyu; Fu, Xiuju

2004-10-01

Recently Chen and Aihara have demonstrated both experimentally and mathematically that their chaotic simulated annealing (CSA) has better search ability for solving combinatorial optimization problems compared to both the Hopfield-Tank approach and stochastic simulated annealing (SSA). However, CSA may not find a globally optimal solution no matter how slowly annealing is carried out, because the chaotic dynamics are completely deterministic. In contrast, SSA tends to settle down to a global optimum if the temperature is reduced sufficiently slowly. Here we combine the best features of both SSA and CSA, thereby proposing a new approach for solving optimization problems, i.e., stochastic chaotic simulated annealing, by using a noisy chaotic neural network. We show the effectiveness of this new approach with two difficult combinatorial optimization problems, i.e., a traveling salesman problem and a channel assignment problem for cellular mobile communications.

Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

PubMed

Panchal, A K; Rai, D K; Solanki, C S

2011-04-01

Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

Investigating the Effects of Low Temperature Annealing of Amorphous Corrosion Resistant Alloys.

DTIC Science & Technology

1980-11-01

Ray Diffraction.................................................... 6 Differential Scanning Calorimetry....................................... 9...17 LIST OF FIGURES Figure 1. X- Ray Diffraction Results From Fe32Ni 36Cr 4P 2 B Annealed for One Hour at...Various Temperatures (Cr Ka Radiation) ................................. 7 Figure 2. X- Ray Diffraction Results From FeU2NiaeCr14SieB Annealed for One

Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

DOEpatents

Forrest, Stephen R.; Thompson, Mark E.; Wei, Guodan; Wang, Siyi

2017-09-19

A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

Optimization Via Open System Quantum Annealing

DTIC Science & Technology

2016-01-07

Daniel A. Lidar. Experimental signature of programmable quantum annealing, Nature Communications , (06 2013): 0. doi: 10.1038/ncomms3067 T. F...Demonstrated error correction effectiveness. • Demonstrated quantum annealing correction on antiferromagnetic chains, with substantial fidelity gains...Rev. A 91, 022309 (2015). 3. A. Kalev and I. Hen, “ Fidelity -optimized quantum state estimation”, New Journal of Physics 17 092008 (2015). 4. I

Lithographically defined porous Ni-carbon nanocomposite supercapacitors.

PubMed

Xiao, Xiaoyin; Beechem, Thomas; Wheeler, David R; Burckel, D Bruce; Polsky, Ronen

2014-03-07

Ni was deposited onto lithographically-defined conductive three dimensional carbon networks to form asymmetric pseudo-capacitive electrodes. A real capacity of above 500 mF cm(-2), or specific capacitance of ∼2100 F g(-1) near the theoretical value, has been achieved. After a rapid thermal annealing process, amorphous carbon was partially converted into multilayer graphene depending on the annealing temperature and time duration. These annealed Ni-graphene composite structures exhibit enhanced charge transport kinetics relative to un-annealed Ni-carbon scaffolds indicated by a reduction in peak separation from 0.84 V to 0.29 V at a scan rate of 1000 mV s(-1).

Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

NASA Technical Reports Server (NTRS)

Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

1987-01-01

Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

Excimer laser annealing for low-voltage power MOSFET

NASA Astrophysics Data System (ADS)

Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Mazzamuto, Fulvio; Huet, Karim

2016-08-01

Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction structure for the P-base junction with a uniform impurity distribution is realized by adopting excimer laser annealing (ELA). The impurity distribution in the P-base junction can be controlled precisely by the irradiated pulse energy density and the number of shots of excimer laser. High impurity activation for the shallow junction has been confirmed in the melted phase. The application of the laser annealing technology in the fabrication process of a practical low-voltage trench gate MOSFET was also examined.

Prevention of nanoparticle coalescence under high-temperature annealing.

PubMed

Mizuno, Mikihisa; Sasaki, Yuichi; Yu, Andrew C C; Inoue, Makoto

2004-12-21

An effective method of employing 3-aminopropyldimethylethoxysilane linker molecules to stabilize 4.4 nm FePt nanoparticle monolayer films on a SiO2 substrate as well as to prevent coalescence of the particles under 800 degrees C annealing is reported. As-deposited FePt nanoparticle films in chemically disordered face-centered-cubic phase transform to mostly chemically ordered L1 0 structure after annealing, while the nanoparticles are free from serious coalescence. The method may fulfill the pressing need to prevent nanoparticle coalescence under high-temperature annealing for the development of FePt nanoparticle based products, such as ultrahigh-density magnetic recording media and novel memory devices.

Adjustable metal-semiconductor transition of FeS thin films by thermal annealing

NASA Astrophysics Data System (ADS)

Fu, Ganhua; Polity, Angelika; Volbers, Niklas; Meyer, Bruno K.; Mogwitz, Boris; Janek, Jürgen

2006-12-01

FeS polycrystalline thin films were prepared on float glass at 500°C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360to600°C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

Thermal annealing and temperature dependences of memory effect in organic memory transistor

NASA Astrophysics Data System (ADS)

Ren, X. C.; Wang, S. M.; Leung, C. W.; Yan, F.; Chan, P. K. L.

2011-07-01

We investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23% due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 °C after annealing, the memory window demonstrates an enlargement up to 100%. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories.

Growth of group II-VI semiconductor quantum dots with strong quantum confinement and low size dispersion

NASA Astrophysics Data System (ADS)

Pandey, Praveen K.; Sharma, Kriti; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

2003-11-01

CdTe quantum dots embedded in glass matrix are grown using two-step annealing method. The results for the optical transmission characterization are analysed and compared with the results obtained from CdTe quantum dots grown using conventional single-step annealing method. A theoretical model for the absorption spectra is used to quantitatively estimate the size dispersion in the two cases. In the present work, it is established that the quantum dots grown using two-step annealing method have stronger quantum confinement, reduced size dispersion and higher volume ratio as compared to the single-step annealed samples. (

Thermal defect annealing of swift heavy ion irradiated ThO 2

DOE PAGES

Palomares, Raul I.; Tracy, Cameron L.; Neuefeind, Joerg; ...

2017-05-19

Neutron total scattering and Raman spectroscopy were used to characterize the structural recovery of irradiated polycrystalline ThO 2 (2.2 GeV Au, = 1 x 10 13 ions/cm 2) during isochronal annealing. Here, neutron diffraction patterns showed that the Bragg signal-to-noise ratio increases and the unit cell parameter decreases as a function of isochronal annealing temperature, with the latter reaching its pre-irradiation value by 750 °C. Diffuse neutron scattering and Raman spectroscopy measurements indicate that an isochronal annealing event occurs between 275$-$425 °C. This feature is attributed to the annihilation of oxygen point defects and small oxygen defect clusters.

SAGRAD: A Program for Neural Network Training with Simulated Annealing and the Conjugate Gradient Method

PubMed Central

Bernal, Javier; Torres-Jimenez, Jose

2015-01-01

SAGRAD (Simulated Annealing GRADient), a Fortran 77 program for computing neural networks for classification using batch learning, is discussed. Neural network training in SAGRAD is based on a combination of simulated annealing and Møller’s scaled conjugate gradient algorithm, the latter a variation of the traditional conjugate gradient method, better suited for the nonquadratic nature of neural networks. Different aspects of the implementation of the training process in SAGRAD are discussed, such as the efficient computation of gradients and multiplication of vectors by Hessian matrices that are required by Møller’s algorithm; the (re)initialization of weights with simulated annealing required to (re)start Møller’s algorithm the first time and each time thereafter that it shows insufficient progress in reaching a possibly local minimum; and the use of simulated annealing when Møller’s algorithm, after possibly making considerable progress, becomes stuck at a local minimum or flat area of weight space. Outlines of the scaled conjugate gradient algorithm, the simulated annealing procedure and the training process used in SAGRAD are presented together with results from running SAGRAD on two examples of training data. PMID:26958442

Annealing Effects on Structure and Optical Properties of Diamond-Like Carbon Films Containing Silver.

PubMed

Meškinis, Šarūnas; Čiegis, Arvydas; Vasiliauskas, Andrius; Šlapikas, Kęstutis; Gudaitis, Rimantas; Yaremchuk, Iryna; Fitio, Volodymyr; Bobitski, Yaroslav; Tamulevičius, Sigitas

2016-12-01

In the present study, diamond-like carbon films with embedded Ag nanoparticles (DLC:Ag) were deposited by reactive magnetron sputtering. Structure of the films was investigated by Raman scattering spectroscopy. Atomic force microscopy was used to define thickness of DLC:Ag films as well as to study the surface morphology and size distribution of Ag nanoparticles. Optical absorbance and reflectance spectra of the films were studied in the 180-1100-nm range. Air annealing effects on structure and optical properties of the DLC:Ag were investigated. Annealing temperatures were varied in the 180-400 °C range. Changes of size and shape of the Ag nanoclusters took place due to agglomeration. It was found that air annealing of DLC:Ag films can result in graphitization following destruction of the DLC matrix. Additional activation of surface-enhanced Raman scattering (SERS) effect in DLC:Ag films can be achieved by properly selecting annealing conditions. Annealing resulted in blueshift as well as significant narrowing of the plasmonic absorbance and reflectance peaks. Moreover, quadrupole surface plasmon resonance peaks appeared. Modeling of absorption spectra of the nanoclusters depending on the shape and surrounding media has been carried out.