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Sample records for annealing temperature dependence

  1. Annealing simulation of cascade damage in -Fe- Damage energy and temperature dependence analyses

    SciTech Connect

    Suzudo, Tomoaki; Golubov, Stanislav I; Stoller, Roger E; Yamaguchi, Masatake; Tsuru, Tomohito; Kaburaki, Hideo

    2012-01-01

    In this paper, kinetic Monte Carlo method was applied to investigate the long time evolution of cascade damage prepared by molecular dynamics simulations in -Fe up to recoil energy of more than 200 keV. We conducted thorough investigation on how the surviving defects vary with cascade damage energy and annealing temperature. The results can be used for input parameters of rate equations to simulate microstructural evolution under irradiation. The study also suggested that neighboring sub-cascades evolves almost independently during annealing, and that the temperature dependence of the annealing results can be explained by the temperature dependence of vacancy-migration and vacancy-dissociation probabilities.

  2. Dependence of Noise in Magnetic Tunnel Junctions Sensors on Annealing Field and Temperature

    DTIC Science & Technology

    2008-03-07

    noise of magnetic tunnel junctions MTJs annealed in the temperature range from 265 to 305 °C and magnetic fields up to 7 T, either in helium or hydrogen...environments. Our results indicate that the magnetic fluctuators in these MTJs changed their frequency based on annealing field and temperature. The...noise of the MTJs at low frequency can be reduced by annealing in high magnetic field 7 T and further improved by annealing in a hydrogen

  3. Dependence of Characteristic Diode Parameters in Ni/n-GaAs Contacts on Thermal Annealing and Sample Temperature

    NASA Astrophysics Data System (ADS)

    Yildirim, N.; Dogan, H.; Korkut, H.; Turut, A.

    We have prepared the sputtered Ni/n-GaAs Schottky diodes which consist of as-deposited, and diodes annealed at 200 and 400°C for 2 min. The effect of thermal annealing on the temperature-dependent current-voltage (I-V) characteristics of the diodes has been experimentally investigated. Their I-V characteristics have been measured in the temperature range of 60-320 K with steps of 20 K. It has been seen that the barrier height (BH) slightly increased from 0.84 (as-deposited sample) to 0.88 eV at 300 K when the contact has been annealed at 400°C. The SBH increased whereas the ideality factor decreased with increasing annealing temperature for each sample temperature. The I-V measurements showed a dependence of ideality factor n and BH on the measuring temperature that cannot be explained by the classical thermionic emission theory. The experimental data are consistent with the presence of an inhomogeneity of the SBHs. Therefore, the temperature dependent I-V characteristics of the diodes have been discussed in terms of the multi-Gaussian distribution model. The experimental data good have agree with the fitting curves over whole measurement temperature range indicating that the SBH inhomogeneity of our as-deposited and annealed Ni/n-GaAs SBDs can be well-described by a double-Gaussian distribution. The slope of the nT versus T plot for the samples has approached to unity with increasing annealing temperature and becomes parallel to that of the ideal Schottky contact behavior for the 400°C annealed diode. Thus, it has been concluded that the thermal annealing process translates the metal-semiconductor contacts into thermally stable Schottky contacts.

  4. Annealing temperature dependency of ZnO thin films memristive behavior

    NASA Astrophysics Data System (ADS)

    Shaari, N. A. A.; Kasim, S. M. M.; Rusop, M.; Herman, S. H.

    2016-07-01

    The work focuses on the effect of different annealing temperature on the ZnO-based memristive device. Zinc oxide was deposited on the ITO substrate by sol-gel spincoating technique. The deposited ZnO thin films were then annealed from 50°C to 450°C in a furnace for 60 minutes each. The electrodes Platinum (Pt) were sputtered by using JEOL JFC-1600 Auto Fine Coater. The thin film thicknesses were measured by Veeco Dektak 150 Surface Profiler. The thickness of the thin film annealed at 350°C is the thinnest, which is 54.78nm and from the electrical characterization it also shown the switching characteristic behavior. The surface morphology and topology to examine the existence of nanoparticles

  5. Effects of annealing on the coercivity of Sm(Co,Fe,Cu,Zr)z ribbons and its temperature dependence

    NASA Astrophysics Data System (ADS)

    Rong, Chuan-bing; Zhang, Hong-wei; Chen, Ren-jie; Shen, Bao-gen; He, Shu-li; Liu, J. Ping

    2006-02-01

    Sm(CobalFe0.1CuxZr0.03)7 (x = 0.0-0.25) ribbons have been prepared by melt spinning. The effects of annealing parameters on coercivity and its temperature dependence have been studied systematically. It is found that the melt-spinning technique remarkably improves the magnetic properties and simplifies the annealing process. The high-performance precipitation-hardened magnets can be obtained by only short-time ageing and slow cooling from 850 to 400 °C, without the standard solid solution. More interestingly, the temperature coefficient of coercivity of the ribbons can be tuned through adjustments of the processing parameters.

  6. Hydrogen blistering of silicon: Effect of implantation temperature, isotope dependence, and key role of dynamic annealing

    SciTech Connect

    Giguere, Alexandre; Terreault, Bernard

    2007-11-15

    Blistering of (001) Cz-Si crystals (>1 {omega} cm), by either protium (H) or deuterium (D) ions of 5 keV energy, was studied as a function of the sample temperature during implantation in the range of 150-450 K. It was found that the blistering dose thresholds decreased with temperature, and very dramatically so in the case of D ions, revealing new aspects of the giant isotope effect. An optimal implantation temperature for ion cutting was found around 100 deg. C, where the required dose is reduced and the isotope effect is minimized. The results are interpreted in terms of models of the interaction of implanted hydrogen with radiation defects, and they show that dynamic annealing is incomparably more efficient in promoting blistering than purely thermal annealing.

  7. Annealing temperature dependent non-monotonic d0 ferromagnetism in pristine In2O3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Cao, Haiming; Xing, Pengfei; Yao, Dongsheng; Wu, Ping

    2017-05-01

    Cubic bixbyite In2O3 nanoparticles with room temperature d0 ferromagnetism were prepared by sol-gel method with the air annealing temperature ranging from 500 to 900 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Raman-scattering and photoluminescence were carried out to demonstrate the presence of oxygen vacancies. The lattice constant, the atomic ratio of crystal O and In, the Raman peak at 369 cm-1, the PL emission peak at 396 nm and the saturation magnetization of d0 ferromagnetism all had a consistent non-monotonic change with the increasing annealing temperature. With further considering the relation between the grain size and the distribution of oxygen vacancies, we think that d0 ferromagnetism in our samples is directly related with the singly charged oxygen vacancies at the surface of In2O3 nanoparticles.

  8. Temperature dependence of GMR and effect of annealing on electrodeposited Co-Ag granular films

    NASA Astrophysics Data System (ADS)

    Garcia-Torres, Jose; Vallés, Elisa; Gómez, Elvira

    2010-10-01

    The magnetoresistance of Co-Ag granular films composed of superparamagnetic and ferromagnetic particles was studied at different temperatures. The increase in the GMR values while decreasing temperature down to 20 K was quantified. The non-saturating behaviour of the MR( H) curves was retained even at the lowest measurement temperature, which was mainly attributed to the dipolar interaction among the superparamagnetic particles. The influence of the annealing conditions on the magnetoresistance was also studied. In all conditions, a decrease in the GMR values was measured being attributed to an increase in the particle size.

  9. Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass

    SciTech Connect

    Ueda, A.; Wu, M.; Mu, R.

    1998-12-31

    The authors have fabricated Se nanoparticles in silica substrates by ion implantation followed by thermal annealing up to 1000 C, and studied the Se nanoparticle formation by optical absorption spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. The sample with the highest dose (1 {times} 10{sup 17} ions/cm{sup 2}) showed the nanoparticle formation during the ion implantation, while the lower dose samples (1 and 3 {times} 10{sup 16} ions/cm{sup 2}) required thermal treatment to obtain nano-sized particles. The Se nanoparticles in silica were found to be amorphous. After thermal annealing, the particle doses approached the value of bulk after thermal annealing. The temperature dependent absorption spectra were also measured for this system in a temperature range from 15 to 300 K.

  10. Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers

    NASA Astrophysics Data System (ADS)

    Watanabe, Kyota; Fukami, Shunsuke; Sato, Hideo; Ikeda, Shoji; Matsukura, Fumihiro; Ohno, Hideo

    2017-08-01

    We investigate the annealing temperature dependence of the magnetic properties of CoFeB/MgO stacks with different buffer materials (Mo, Ta, and W). For Mo and W, bcc-crystalline and amorphous-like films are prepared by changing the deposition conditions. A relatively small saturation magnetization is maintained after annealing up to 400 °C for the samples with bcc-W, bcc-Mo, and amorphous-like Mo buffers. A small variation in magnetic dead layer thickness with annealing is observed for the samples with bcc-crystalline buffer layers. The interfacial anisotropy is found to mainly depend on the element of the buffer layer used regardless of its crystalline structure, and is larger for the samples with W and Mo buffers than those with Ta buffer. The sample with bcc-Mo buffer shows the highest robustness against annealing among the studied systems. We give a systematic picture based on the thermochemistry that can reasonably explain the observed buffer layer dependence of the variations in magnetic properties with annealing.

  11. The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

    NASA Astrophysics Data System (ADS)

    Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

    2016-04-01

    CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co65Ni15Fe20, Co62Ni15Fe23, and Co55Ni15Fe30 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co65Ni15Fe20, Co62Ni15Fe23, and Co55Ni15Fe30 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

  12. The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

    SciTech Connect

    Suharyadi, Edi Riyanto, Agus; Abraha, Kamsul

    2016-04-19

    CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co{sub 65}Ni{sub 15}Fe{sub 20}, Co{sub 62}Ni{sub 15}Fe{sub 23}, and Co{sub 55}Ni{sub 15}Fe{sub 30} thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co{sub 65}Ni{sub 15}Fe{sub 20}, Co{sub 62}Ni{sub 15}Fe{sub 23}, and Co{sub 55}Ni{sub 15}Fe{sub 30} thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

  13. The annealing temperature dependence of anatase TiO2 thin films prepared by the electron-beam evaporation method

    NASA Astrophysics Data System (ADS)

    Taherniya, Atefeh; Raoufi, Davood

    2016-12-01

    In this paper, we report on titanium dioxide (TiO2) thin films deposited by an electron beam evaporation method on quartz glass substrates (15 × 15 × 2 mm3 in size), followed by post-annealing at 300 °C to 600 °C for an annealing time of up to 2 h. The substrate temperature during the film deposition was kept at 150 °C. The effect of post-growth thermal annealing on the structural and optical properties of TiO2 thin films were systematically studied as a function of annealing temperature. We found that the as-deposited TiO2 films are amorphous in structure, while the films started to crystallize into the anatase phase when annealed at temperatures ≥450 °C. An increase in annealing temperature results in a decrease of transmittance percentage and also in optical band gap energy. The refractive indices of the films were evaluated from the measured transmittance spectra using the envelope method. An increase in the refractive index with an increase of annealing temperature was observed.

  14. Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts

    NASA Astrophysics Data System (ADS)

    Ejderha, Kadir; Yıldırm, N.; Turut, A.

    2014-11-01

    Co/n-GaN SDs has been prepared by magnetron DC sputtering technique. The Co/n-GaN SDs have annealed at 600 °C after a post-deposition. The diode parameters such as the ideality factor, barrier height and Richardson constant have been determined by thermionic emission (TE) equation within the measurement temperature range 60-320 K by the steps of 20 K in the dark. It has been seen that the parameters depend on the measurement temperature indicating the presence of a lateral inhomogeneity in the Schottky barrier. Therefore, it has been modified the experimental data by the thermionic emission (TE) mechanism with Gaussian distribution of the barrier heights by using Tung's theoretical approach that the Schottky barrier consists of laterally inhomogeneous patches of different barrier heights. Thus, the modified Richardson plot according to Tung's barrier inhomogeneity model [8] has given a Richardson constant of 27.66 A/(cm2 K2).

  15. Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping

    2013-12-01

    Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

  16. Annealing temperature and thickness dependencies of structural and magnetic properties of Co2FeAl thin films

    NASA Astrophysics Data System (ADS)

    Belmeguenai, M.; Gabor, M. S.; Zighem, F.; Roussigné, Y.; Faurie, D.; Tiusan, C.

    2016-09-01

    Co2FeAl (CFA) thin films, of various thicknesses (3 nm≤t ≤50 nm ), have been grown by sputtering on (001) MgO single-crystal substrates and annealed at different temperatures (RT≤Ta≤600 ∘C , where RT is the room temperature). The influence of the CFA thickness (t ), as well as ex situ annealing temperature (Ta), on the magnetic and structural properties has been investigated by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed an epitaxial growth of the films with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B 2 phase to the A 2 phase when decreasing t or Ta. The deduced lattice parameters showed an in-plane tetragonal distortion and in-plane and out-plane strains that increase with Ta and 1 /t . For all Ta values, the variation of the effective magnetization, deduced from the fit of MS-FMR measurements, shows two different regimes separated by a critical thickness, which is Ta dependent. It decreases (increases) linearly with the inverse thickness (1 /t ) in the first (second) regime due to the contribution of the magnetoelastic anisotropy to surface (to volume) anisotropy. The observed behavior has been analyzed through a model allowing for the separation of the magnetocrystalline, magnetoelastic, and Néel-type interface anisotropy constants to the surface and the volume anisotropies. Similar behavior has been observed for the effective fourfold anisotropy field which governs the in-plane anisotropy present in all the samples. Finally, the MS-FMR data also allow one to conclude that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with Ta.

  17. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  18. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  19. Composition and annealing temperature dependent properties of Co{sub 1-x}Pt{sub x}(0

    SciTech Connect

    Li Wuxia; Shen, Tiehan H.

    2005-05-15

    Arrays of Co{sub 1-x}Pt{sub x}(0annealing dependent properties of these samples have been investigated by a range of techniques. X-ray diffraction experiments show that the crystal structure of alloy nanowire varies with the chemical composition, ranging from predominantly c axis oriented for pure Co to textured, e.g., Co{sub 87}Pt{sub 13} and to nontextured pure Pt wires. Hysteresis loops, saturation magnetization, squareness ratio (M{sub r}/M{sub s}), and coercivity (perpendicular and parallel to the wire axis) have all been investigated as a function of the composition. Rapid thermal annealing treatment demonstrates that nanowires with different composition shows different response to the annealing temperatures. The annealing temperature related changes in coercivity, squareness, crystal structure, and ultraviolet-visible spectra are also presented.

  20. Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity

    SciTech Connect

    Zulkefle, M. A. Rahman, R. A. Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2016-07-06

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  1. Post-deposition annealing temperature dependence TiO2-based EGFET pH sensor sensitivity

    NASA Astrophysics Data System (ADS)

    Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2016-07-01

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO2 sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO2 deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO2 thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  2. Effects of thermal annealing on photoluminescence spectra in π-conjugated polymer film: evidence for dual emission by temperature dependent measurements

    NASA Astrophysics Data System (ADS)

    Wang, R. Z.; Yang, X.; Wang, Y. C.; Sheng, C.-X.; Chen, Q.

    2014-09-01

    Various spectroscopy techniques such as absorption, photoluminescence and photoinduced absorption (PIA) spectroscopy, were used to study the photophysics in poly [2-methoxy-5-(20-ethyl-hexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) films, which were dropped cast on glass substrates using its toluene solution and being annealed at various temperatures. With the analysis of temperature dependence PL intensities, we conclude that PL emission around 680 nm at low temperature is due to intertain excimers instead of intrachain excitons for 450 K annealed film. On the other hand, this relative intensity difference is much smaller in both unannealed and 500 K annealed films, in which the morphology is amorphous and microcrystalline, respectively. We conclude that the interchain photoexcitations play crucial roles in the photophysics of MEH-PPV films. The further measurements on PIA spectrum of MEH-PPV films suggest that the interchain photoexciation is also important for the generation of triplet excitons.

  3. Temperature Scaling Law for Quantum Annealing Optimizers

    NASA Astrophysics Data System (ADS)

    Albash, Tameem; Martin-Mayor, Victor; Hen, Itay

    2017-09-01

    Physical implementations of quantum annealing unavoidably operate at finite temperatures. We point to a fundamental limitation of fixed finite temperature quantum annealers that prevents them from functioning as competitive scalable optimizers and show that to serve as optimizers annealer temperatures must be appropriately scaled down with problem size. We derive a temperature scaling law dictating that temperature must drop at the very least in a logarithmic manner but also possibly as a power law with problem size. We corroborate our results by experiment and simulations and discuss the implications of these to practical annealers.

  4. Reduced annealing temperatures in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.

    1981-01-01

    Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

  5. High temperature annealing of ion irradiated tungsten

    DOE PAGES

    Ferroni, Francesco; Yi, Xiaoou; Arakawa, Kazuto; ...

    2015-03-21

    In this study, transmission electron microscopy of high temperature annealing of pure tungsten irradiated by self-ions was conducted to elucidate microstructural and defect evolution in temperature ranges relevant to fusion reactor applications (500–1200°C). Bulk isochronal and isothermal annealing of ion irradiated pure tungsten (2 MeV W+ ions, 500°C, 1014 W+/cm2) with temperatures of 800, 950, 1100 and 1400°C, from 0.5 to 8 h, was followed by ex situ characterization of defect size, number density, Burgers vector and nature. Loops with diameters larger than 2–3 nm were considered for detailed analysis, among which all loops had View the MathML source andmore » were predominantly of interstitial nature. In situ annealing experiments from 300 up to 1200°C were also carried out, including dynamic temperature ramp-ups. These confirmed an acceleration of loop loss above 900°C. At different temperatures within this range, dislocations exhibited behaviour such as initial isolated loop hopping followed by large-scale rearrangements into loop chains, coalescence and finally line–loop interactions and widespread absorption by free-surfaces at increasing temperatures. An activation energy for the annealing of dislocation length was obtained, finding Ea=1.34±0.2 eV for the 700–1100°C range.« less

  6. High temperature annealing of ion irradiated tungsten

    SciTech Connect

    Ferroni, Francesco; Yi, Xiaoou; Fitzgerald, Steven P.; Edmondson, Philip D.; Roberts, Steve G.

    2015-03-21

    In this study, transmission electron microscopy of high temperature annealing of pure tungsten irradiated by self-ions was conducted to elucidate microstructural and defect evolution in temperature ranges relevant to fusion reactor applications (500–1200°C). Bulk isochronal and isothermal annealing of ion irradiated pure tungsten (2 MeV W+ ions, 500°C, 1014 W+/cm2) with temperatures of 800, 950, 1100 and 1400°C, from 0.5 to 8 h, was followed by ex situ characterization of defect size, number density, Burgers vector and nature. Loops with diameters larger than 2–3 nm were considered for detailed analysis, among which all loops had View the MathML source and were predominantly of interstitial nature. In situ annealing experiments from 300 up to 1200°C were also carried out, including dynamic temperature ramp-ups. These confirmed an acceleration of loop loss above 900°C. At different temperatures within this range, dislocations exhibited behaviour such as initial isolated loop hopping followed by large-scale rearrangements into loop chains, coalescence and finally line–loop interactions and widespread absorption by free-surfaces at increasing temperatures. An activation energy for the annealing of dislocation length was obtained, finding Ea=1.34±0.2 eV for the 700–1100°C range.

  7. Annealing temperature and O2 partial pressure dependence of T(sub c) in HgBa2CuO(4+delta)

    NASA Technical Reports Server (NTRS)

    Xiong, Q.; Cao, Y.; Chen, F.; Xue, Y. Y.; Chu, C. W.

    1994-01-01

    Samples of HgBa2CuO(4+delta) (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (T(sub a)) and O2 partial pressure (P(sub 0)), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm O2 at 260 C less than or equal to T(sub a) less than or equal to 400 C, the obtained T(sub c) is nearly the same (approximately 97 K). However, it decreases quickly with T(sub a) greater than 300 C in high vacuum (P(sub 0) approximately 10(exp -8) atm), and reaches zero at T(sub a) = 400 C. On the other hand, T(sub c) decreases with the decrease of T(sub a) in high-pressure O2 (approximately 500 atm) and reaches approximately 20 K at about 240 C. In the entire annealing region, the oxygen surplus varies significantly from 0.03 to 0.4, and a wide range of T(sub c) variation (0 goes to 97 K goes to 20 K) was obtained with anion doping alone.

  8. Annealing temperature dependent structural and magnetic properties of MnFe2O4 nanoparticles grown by sol-gel auto-combustion method

    NASA Astrophysics Data System (ADS)

    Bhandare, S. V.; Kumar, R.; Anupama, A. V.; Choudhary, H. K.; Jali, V. M.; Sahoo, B.

    2017-07-01

    Manganese ferrite (MnFe2O4) nanoparticles were synthesized by sol-gel auto-combustion method using manganese nitrate and ferric nitrate as precursors and citric acid as a fuel. Scanning electron micrographs show irregularly shaped morphology of the particles. The as-prepared samples were annealed at 400, 500, 600 and 800 °C for 2 h in air. The phase identification and structural characterizations were performed using powder X-ray diffraction technique along with Mössbauer spectroscopy. Magnetization loops and 57Fe Mössbauer spectra were measured at RT. After annealing the sample at or below ∼ 500 °C, we observed two different spinel phases corresponding to two different lattice parameters. This is originating due to the partial oxidation of Mn2+ to Mn3+. At high annealing temperatures (∼ 600 °C or above) the spinel MnFe2O4 phase decomposes into crystalline α-Mn2O3 and α-Fe2O3 phases, and amorphous FeO phase.

  9. Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.

    1980-01-01

    The defect responsible for reverse annealing in 2 ohm/cm n(+)/p silicon solar cells was identified. This defect, with energy level at e sub v + 0.30 eV was tentatively identified as a boron oxygen-vacancy complex. Results indicate that its removal could result in significant annealing for 2 ohm/cm and lower resistivity cells at temperatures as low as 200 C. These results were obtained by use of an expression derived from the Shockley-Read-Hall recombination theory which relates measured diffusion length ratios to relative defect concentrations and electron capture cross sections. The relative defect concentrations and one of the required capture cross sections are obtained from Deep Level Transient Spectroscopy. Four additional capture cross sections are obtained using diffusion length data and data from temperature dependent lifetime studied. These calculated results are in reasonable agreement with experimental data.

  10. Effect of annealing on the temperature dependence of inelastic tunneling contributions vis-à-vis tunneling magnetoresistance and barrier parameters in CoFe/MgO/NiFe magnetic tunnel junctions

    SciTech Connect

    Bhusan Singh, Braj; Chaudhary, Sujeet

    2014-02-28

    The effect of annealing on the changes in the inelastic tunneling contributions in tunneling conductance of ion beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions (MTJs) is investigated. The inelastic contributions are evaluated using hopping conduction model of Glazman and Matveev in the temperature range of 25–300 K. The hopping through number of series of localized states present in the barrier due to structural defects increases from 9 (in as deposited MTJ) to 18 after annealing (at 200 °C/1 h); although no changes in the interface roughness of CoFe-MgO and MgO-NiFe interfaces are observed as revealed by the x-ray reflectance studies on planar MTJs. The bias dependence of tunneling magnetoresistance (TMR) at 25 K is found to get improved after annealing as revealed by the value V{sub 1/2} (the bias value at which the TMR reaches to half of its value at nearly zero bias); which is 78 mV (in MTJ annealed at 200 °C/1 h) 2.5 times the value of 33 mV (in as deposited MTJ). At 25 K the inelastic tunneling spectra revealed the presence of zero bias anomaly and magnon excitations in the range of 10–15 mV. While the barrier height exhibited a strong temperature dependence with nearly 100% increase from the value at 300 K to 25 K, the temperature dependence of TMR becomes steep after annealing.

  11. Thermoelectric properties by high temperature annealing

    NASA Technical Reports Server (NTRS)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  12. Annealing dependence of giant magnetoresistance in CuFeNi alloys

    NASA Astrophysics Data System (ADS)

    Martins, C. S.; Missell, F. P.

    2000-05-01

    Giant magnetoresistance (GMR) in granular CuFeNi alloys is comparable in magnitude to that observed in CuCo. Here we study magnetization M and GMR (0annealed Cu80Fe20-xNix (x=0, 2.5, 5, 10, and 15) as a function of annealing temperature Tan<500 °C, using a superconducting quantum interference device (SQUID) magnetometer. A wide variety of granular structures characterized by different average values of the particle sizes is obtained for different Fe/Ni ratios and annealing conditions. For Cu80Fe10Ni10, neither M nor GMR exhibit static hysteresis for T>50 K. At this temperature, the largest GMR value (19%) was obtained for a sample annealed at 400 °C for 2 h. In Cu80Fe5Ni15, on the other hand, the microstructure and magnetic properties of the alloy are much more sensitive to annealing. The magnetoresistence is strongly dependent upon both the annealing and the measuring temperatures. For Fe-rich Cu80Fe20-xNix, the magnetic properties other alloys show a weak dependence upon annealing temperature. Magnetization curves for both as-cast and annealed alloys indicate many large particles which saturate at low magnetic fields. GMR versus alloy composition is presented for two annealing temperatures.

  13. Optimization of Temperatures Heating Melt and Annealing Soft Magnetic Alloys

    NASA Astrophysics Data System (ADS)

    Tsepelev, Vladimir; Starodubtsev, Yuri

    2017-05-01

    Taking into account the concept of the quasi-chemical model of the liquid micro-non-uniform composition and the research made on the physical properties of the Fe-based melts being crystallized, the unique technology of the melt time-temperature treatment has been developed. Amorphous ribbons produced using this technology require optimal annealing temperatures to be specifically selected. Temperature dependences of the kinematic viscosity of a multicomponent Fe72.5Cu1Nb2Mo1.5Si14B9 melt have been studied. A critical temperature is detected above which the activation energy of viscous flow of the melt changes. Upon cooling the overheated melt, the temperature curves of the kinematic viscosity become linear within the given coordinates. In amorphous ribbon produced in the mode with overheating the melt above the critical temperature, the enthalpy of crystallization grows, the following heat treatment results in an increase in magnetic permeability.

  14. Burst annealing of high temperature GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  15. Annealing temperature and thickness dependence of magnetic properties in epitaxial L1{sub 0}-Mn{sub 1.4}Ga films

    SciTech Connect

    Zheng, Y. H. Lu, H.; Teo, K. L.; Han, G. C.

    2014-01-28

    Mn{sub 1.4}Ga films with high perpendicular magnetic anisotropy and high crystalline quality were grown on MgO substrates with Cr buffer layer using molecular beam epitaxy. The crystalline structure and the surface morphology of the films have been systematically investigated as functions of in-situ annealing temperature (T{sub a}) and film thickness. It is found that the magnetic properties can be largely tuned by adjusting T{sub a}. As T{sub a} increases, both saturation magnetization (M{sub s}) and uniaxial perpendicular magnetic anisotropy constant (K{sub u}) increase to the maximum values of 612 emu/cc and 18 Merg/cc at 300 °C, respectively, and then decrease. The morphology also changes with T{sub a}, showing a minimum roughness of 2.2 Å at T{sub a} = 450 °C. On the other hand, as the thickness increases, M{sub s} and K{sub u} increase while coercivity decreases, which indicates there is a magnetic dead layer with a thickness of about 1.5 nm at the interfaces. The detailed examination on the surface morphology of the films with various thicknesses shows a complicated film growth process, which can be understood from the relaxation mechanism of the interfacial strain.

  16. Selective aspect ratio of CNTs based on annealing temperature by TCVD method

    NASA Astrophysics Data System (ADS)

    Yousefi, Amin Termeh; Mahmood, Mohamad Rusop; Ikeda, Shoichiro

    2016-07-01

    Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicate that the nanotubes are approximately perpendicular to the surface of the silicon substrate and form carbon nanotubes in different aspect ratios according to the applied annealing temperature. Furthermore, due to the optimized results it can be observed that, the mechanism of the CNTs growth is still present in the annealing step as well as deposition process and the most CNTs with crystalline aspect, produced in the annealing temperature, which was optimized at 700 - 900 ˚C. This result demonstrates that the growth rate, mass production, diameter, density, and crystallinity of CNT can be controlled by the annealing temperature.

  17. Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing.

    PubMed

    Alouane, M H Hadj; Ilahi, B; Maaref, H; Salem, B; Aimez, V; Morris, D; Gendry, M

    2011-10-01

    We report on the impact of phosphorous ion-implantation-induced band gap tuning on the temperature dependent photoluminescence (PL) properties of InAs/InP quantum dashes (QDas). The high temperature range carriers' activation energy, extracted from Arrhenius plots, is found to decrease from 238 to 42 meV when the ion implantation dose increases from 10(11) cm(-2) to 5 x 10(14) cm(-2) which is consistent with the observed emission energy blueshift increase with increasing the ion implantation doses. This effect is attributed to the As/P exchange which reduces the carrier confining potential depth. For intermediate ion implantation doses the reduced carrier confining potential barrier combined with the non-uniform intermixing process, that causes an increased QDas size dispersion, result in anomalous temperature-dependent PL properties. Indeed, the temperature induced PL emission energy redshift measured between 10 K and 300 K is found to be strongly affected by the carrier redistribution within the broadened localized QDas states.

  18. Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect

    Iucolano, Ferdinando; Greco, Giuseppe; Roccaforte, Fabrizio

    2013-11-11

    This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρ{sub C}, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρ{sub C} exhibits a “metal-like” behavior, i.e., describable by a T{sup 1.8} dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.

  19. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

    NASA Technical Reports Server (NTRS)

    Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

    1973-01-01

    Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

  20. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

    NASA Technical Reports Server (NTRS)

    Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

    1973-01-01

    Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

  1. Solid solution strengthening and phase transformation in high-temperature annealed Si80Ge20 alloy

    NASA Astrophysics Data System (ADS)

    Chiang, Tun-Yuan; Wen, Hua-Chiang; Chou, Wu-Ching; Tsai, Chien-Huang

    2014-03-01

    This investigation demonstrates the temperature-dependent mechanical properties of Si80Ge20 alloy films via a nanoindenter in the indentation depth of 100 nm. The roughly equal root mean square roughness (Rrms) values and repeatable load-displacement (P-δ) curves for the samples ensure the mechanical performances mainly contributed from the influences of annealing temperatures. The hardness (H) values of samples increase with the temperatures of an initial annealing in the range from RT to 900 °C, and, conversely, decrease for annealing temperatures over 900 °C. Accordingly, both E/H and hf/hmax values, exhibiting an inverse tendency in the above temperature range, hints that the solid solution strengthening effect and the softening phenomenon occur for the initial-annealing and over-annealing stages, respectively. In addition, grazing incidence X-ray diffraction (GIXRD) analysis demonstrates the lattice expansion and the broadened peak that attribute to the solid solution strengthening of samples and the segregation of Ge, respectively. Through observing the value of the (200) lattice spacing of 5.624 Å for a 900 °C-annealed sample by transmission electron microscopy (TEM) analysis, it is verified that the segregation of Ge is responsible for the decreased hardness for the 1000 °C-annealed sample.

  2. Ultra High Temperature Rapid Thermal Annealing of GaN

    SciTech Connect

    Cao, X.A.; Fu, M.; Han, J.; Pearton, S.J.; Rieger, D.J.; Sekhar, J.A.; Shul, R.J.; Singh, R.K.; Wilson, R.G.; Zolper, J.C.

    1998-11-20

    All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on A1203 substrates. Annealing was performed at 1100- 1500 C, using AIN encapsulation. Activation percentages of >90Y0 were obtained for Si+ implantation annealed at 1400 C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450 C.

  3. Low temperature magnetothermoelectric effect and magnetoresistance in Te vapor annealed Bi2Te3.

    PubMed

    Hor, Y S; Qu, D; Ong, N P; Cava, R J

    2010-09-22

    The electrical properties of single crystals of p-type Bi(2)Te(3) are shown to be tuned by annealing as-grown crystals in elemental Te vapor at temperatures in the range of 400-420 °C. While as-grown nominally stoichiometric Bi(2)Te(3) has p-type conductivity below room temperature, Te vapor annealed Bi(2)Te(3) shows a cross over from p- to n-type behavior. The temperature dependent resistivity of the Te annealed crystals shows a characteristic broad peak near 100 K. Applied magnetic fields give rise to a large low temperature magnetothermoelectric effect in the Te annealed samples and enhance the low temperature peak in the resistivity. Further, Te annealed Bi(2)Te(3) shows a large positive magnetoresistance, ∼ 200% at 2 K, and ∼ 15% at room temperature. The annealing procedure described can be employed to optimize the properties of Bi(2)Te(3) for study as a topological insulator.

  4. A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures

    NASA Astrophysics Data System (ADS)

    Capano, M. A.

    2001-12-01

    There is recent evidence that the temperature at which implants in SiC are activated plays a determining role in the performance of some devices. One example is the dependence of the channel mobility of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) on the annealing temperature needed to activate source and drain implants. Another example is the dependence of surface roughness on anneal temperature. In both cases, there are definite advantages in using low processing temperatures for implant activation anneals. This paper considers low-temperature ion implantation processing of SiC electronic materials, and modifications to the gate oxidation step for SiC MOSFETs that may be required by the use of low-temperature activation annealing. The term 'low-temperature' is used to indicate annealing temperatures well below 1500 °C which are typically used for donor implant activation in SiC. The substitution of phosphorus for nitrogen in the fabrication of MOSFETs, while enabling low-temperature activation annealing, leads to excessive gate leakage currents. The cause of oxide leakage is discussed speculatively in terms of excess carbon on the SiC prior to gate oxidation. These assumptions form the premise for SiC MOSFET experiments fabricated with phosphorus-implanted source and drain regions, and a modified oxidation procedure. MOSFETs built using phosphorus implants annealed at 1200 °C and the modified oxidation procedure exhibit ID/ IG current ratios greater than 10 4, and channel mobilities in excess of 10 cm 2/V s. The device yield is greater than 90%.

  5. Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.

    1980-01-01

    Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

  6. Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jiang, Xian-Zhe; Yang, Xue-Lin; Ji, Cheng; Xing, Hai-Ying; Yang, Zhi-Jian; Wang, Cun-Da; Yu, Tong-Jun; Zhang, Guo-Yi

    2014-06-01

    GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on VGa related defects are observed from photoluminescence measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different (n-type GaN and p-type GaN) templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.

  7. Influence of annealing temperature on the Dy diffusion process in NdFeB magnets

    NASA Astrophysics Data System (ADS)

    Hu, Sheng-qing; Peng, Kun; Chen, Hong

    2017-03-01

    Sintered NdFeB magnets were coated with a layer of Dy metal using electron beam evaporation method and then annealed at various temperatures to investigate the temperature dependence of Dy diffusion process in NdFeB magnets. A Dy-rich phase was observed along the grain boundaries after the grain boundary diffusion process, the diffusion coefficients of various temperatures were obtained, the diffusion coefficients of Dy along the grain boundaries at 800 °C and 900 °C were determined to be 9.8×10-8 cm2 s-1 and 2.4×10-7 cm2 s-1, respectively. The diffusion length depended on the annealing temperature and the maximum diffusion length of approximately 1.8 mm and 3.0 mm can be obtained after annealing at 800 °C and 900 °C for 8 h. Higher diffusion temperature results in the diffusion not only along the grain boundaries but also into grains and then decrease in magnetic properties. The optimum annealing conditions can be determined as 900 °C for 8 h. The coercivity was improved from 1040 kA/m to 1450 kA/m and its magnetization has no significant reduction after the grain boundary diffusion process at the optimum annealing conditions.

  8. Current perpendicular-to-plane giant magnetoresistance using an L 12 Ag3Mg spacer and Co2Fe0.4Mn0.6Si Heusler alloy electrodes: Spacer thickness and annealing temperature dependence

    NASA Astrophysics Data System (ADS)

    Kubota, Takahide; Ina, Yusuke; Wen, Zhenchao; Narisawa, Hiroyuki; Takanashi, Koki

    2017-09-01

    Spacer thickness tN and annealing temperature Tanneal dependence of current perpendicular-to-plane giant magnetoresistance effects were investigated in junctions using L 12Ag3Mg spacer and half-metallic Co2Fe0.4Mn0.6Si (CFMS) Heusler alloy electrodes. tN was changed from 2-12 nm and Tanneal was changed from 450 -650°C to promote the chemical ordering of the CFMS electrodes. Concerning the tN dependence, the magnetoresistance (MR) ratio and the change of the areal resistance (Δ R A ) exhibited the maximum values at tN=5 nm . The reasons for the decrease of the MR ratio for tN<5 nm and for tN>5 nm were possibly due to an unstable antiparallel magnetization configuration and to the increased occurrence of spin scattering inside the Ag3Mg spacer, respectively. The spin-diffusion length of the Ag3Mg spacer was also estimated using the tN dependence of Δ R A and it was found to be of the order of 10-30 nm. Concerning the Tanneal dependence, Δ R A and the MR ratio exhibited the maximum values at 550°C, which was the optimum point in terms of the degrees of order in the CFMS layers and the Ag3Mg layer, and the (001) orientation of the layered structure. The maximum Δ R A and the intrinsic MR ratio in which parasitic resistance contribution was eliminated were 25 m Ω μ m2 and 63%, respectively, at room temperature.

  9. Effect of annealing temperature on titania nanoparticles

    SciTech Connect

    Manikandan, K. Arumugam, S.; Chandrasekaran, G.

    2014-04-24

    Titania polycrystalline samples are prepared by using sol-gel route hydrolyzing a alkoxide titanium precursor under acidic conditions. The as prepared samples are treated with different calcination temperatures. The anatase phase of titania forms when treated below 600°C, above that temperature the anatase phase tends to transform into the rutile phase of titania. The experimental determination of average grain size, phase formation, lattice parameters and the crystal structures of titania samples at different calcinations is done using X-ray diffraction (XRD). Fourier Transform Infra-red Spectroscopy (FTIR), UV-vis-NIR spectroscopy and Scanning Electron Microscopy (SEM) and Energy Dispersive Analysis X-ray are used to characterize the samples to bring impact on the respective properties.

  10. Influence of annealing treatment on as-grown Ib-type diamond crystal at a high temperature and high pressure

    NASA Astrophysics Data System (ADS)

    Huang, Guo-Feng; Yin, Ji-Wen; Bai, Hong-Bo; Hu, Yi-Ga; Kai, Li; Jing, Jing; Ma, Hong-An; Jia, Xiao-Peng

    2012-10-01

    In this paper, we report on the influence of annealing treatment on as-grown Ib-type diamond crystal under high pressure and high temperature in a china-type cubic anvil high-pressure apparatus. Experiments are carried out at a pressure of 7.0 GPa and temperatures ranging from 1700 °C to 1900 °C for 1 h. Annealing treatment of the diamond crystal shows that the aggregation rate constant of nitrogen atoms in the as-grown Ib-type diamond crystal strongly depends on diamond morphology and annealing temperature. The aggregation rate constant of nitrogen remarkably increases with the increase of annealing temperature and its value in octahedral diamond is much higher than that in cubic diamond annealed at the same temperature. The colour of octahedral diamond crystal is obviously reduced from yellow to nearly colorless after annealing treatment for 1 h at 1900 °C, which is induced by nitrogen aggregation in a diamond lattice. The extent of nitrogen aggregation in an annealed diamond could approach approximately 98% indicated from the infrared absorption spectra. The micro-Raman spectrum reveals that the annealing treatment can improve the crystalline quality of Ib-type diamond characterized by a half width at full maximum at first order Raman peak, and therefore the annealed diamond crystals exhibit nearly the same properties as the natural IaA-type diamond stones of high quality in the Raman measurements.

  11. Temperature effects on the mechanical properties of annealed and HERF 304L stainless steel.

    SciTech Connect

    Antoun, Bonnie R.

    2004-11-01

    The effect of temperature on the tensile properties of annealed 304L stainless steel and HERF 304L stainless steel forgings was determined by completing experiments over the moderate range of -40 F to 160 F. Temperature effects were more significant in the annealed material than the HERF material. The tensile yield strength of the annealed material at -40 F averaged twenty two percent above the room temperature value and at 160 F averaged thirteen percent below. The tensile yield strength for the three different geometry HERF forgings at -40 F and 160 F changed less than ten percent from room temperature. The ultimate tensile strength was more temperature dependent than the yield strength. The annealed material averaged thirty six percent above and fourteen percent below the room temperature ultimate strength at -40 F and 160 F, respectively. The HERF forgings exhibited similar, slightly lower changes in ultimate strength with temperature. For completeness and illustrative purposes, the stress-strain curves are included for each of the tensile experiments conducted. The results of this study prompted a continuation study to determine tensile property changes of welded 304L stainless steel material with temperature, documented separately.

  12. Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature

    NASA Astrophysics Data System (ADS)

    Peres, M.; Lorenz, K.; Alves, E.; Nogales, E.; Méndez, B.; Biquard, X.; Daudin, B.; Víllora, E. G.; Shimamura, K.

    2017-08-01

    β-Ga2O3 bulk single crystals were doped by ion implantation at temperatures from room temperature to 1000 °C, using a 300 keV Europium beam with a fluence of 1  ×  1015 at cm-2. Rising the implantation temperature from room temperature to 400-600 °C resulted in a significant increase of the substitutional Eu fraction and of the number of Eu ions in the 3+  charge state as well as in a considerable decrease of implantation damage. Eu is found in both charge states 2+  and 3+  and their relative fractions are critically dependent on the implantation and annealing temperature, suggesting that defects play an important role in stabilizing one of the charge states. The damage recovery during post-implant annealing is a complex process and typically defect levels first increase for intermediate annealing temperatures and a significant recovery of the crystal only starts around 1000 °C. Cathodoluminescence spectra are dominated by the sharp Eu3+ related intra-ionic 4f transition lines in the red spectral region. They show a strong increase of the emission intensity with increasing annealing temperature, in particular for samples implanted at elevated temperature, indicating the optical activation of Eu3+ ions. However, no direct correlation of emission intensity and Eu3+ fraction was found, again pointing to the important role of defects on the physical properties of these luminescent materials.

  13. Vacuum annealing temperature on spray In2S3 layers

    NASA Astrophysics Data System (ADS)

    Bouguila, Nourredine; Timoumi, Abdelmajid; Bouzouita, Hassen

    2014-02-01

    Indium sulfide In2S3 thick films are deposited on glass substrates using spray technique over the optimum conditions experiments (Ts = 340 °C, S/In = 2). The films are polycrystalline and have thickness of about 1.8 μm. These films are annealed in a vacuum sealed pyrex tubes (10-5 torr). Physico-chemical characterizations by SEM observation, X-ray diffraction and EDX analysis are undertaked on these films. This treatment has improved crystallinity of samples. It has allowed thus to stabilize β and γ varieties of In2S3 material. In2O3 and In6S7 phases have appeared with very weak intensities at high temperatures. The best structure quality are obtained at 300 °C for the optimum annealed temperature (Ts = 340 °C, S/In = 2), for which samples are constituted in dominance by γ phase oriented preferentially towards (1 0 2). The grain size is 42 nm of this phase. Chemical composition of such films has changed relatively to non-treated film but it seems not be affected by treatment temperature. Atomic molar ratio S/In is obtained for 0.9. Optical study shows that these layers are transparent in the visible and optical direct band gap increases as function of annealed temperature.

  14. Cesium lead iodide solar cells controlled by annealing temperature.

    PubMed

    Kim, Yu Geun; Kim, Tae-Yoon; Oh, Jeong Hyeon; Choi, Kyoung Soon; Kim, Youn-Jea; Kim, Soo Young

    2017-02-22

    An inorganic lead halide perovskite film, CsPbI3, used as an absorber in perovskite solar cells (PSCs) was optimized by controlling the annealing temperature and the layer thickness. The CsPbI3 layer was synthesized by one-step coating of CsI mixed with PbI2 and a HI additive in N,N-dimethylformamide. The annealing temperature of the CsPbI3 film was varied from 80 to 120 °C for different durations and the thickness was controlled by changing the spin-coating rpm. After annealing the CsPbI3 layer at 100 °C under dark conditions for 10 min, a black phase of CsPbI3 was formed and the band gap was 1.69 eV. Most of the yellow spots disappeared, the surface coverage was almost 100%, and the rms roughness was minimized to 3.03 nm after annealing at 100 °C. The power conversion efficiency (PCE) of the CsPbI3 based PSC annealed at 100 °C was 4.88%. This high PCE value is attributed to the low yellow phase ratio, high surface coverage, low rms roughness, lower charge transport resistance, and lower charge accumulation. The loss ratio of the PCE of the CH3NH3PbIxCl3-x and CsPbI3 based PSCs after keeping in air was 47 and 26%, respectively, indicating that the stability of the CsPbI3 based PSC is better than that of the CH3NH3PbIxCl3-x based PSC. From these results, it is evident that CsPbI3 is a potential candidate for solar cell applications.

  15. Frequency dependence of loss tangent of thermally annealed undoped lead iodide crystals in the dark

    NASA Astrophysics Data System (ADS)

    Hassan, Mahmoud A.; Abdul-Gader Jafar, Mousa M.

    2006-10-01

    The effect of isothermal annealing ( T⩽120 °C) on the frequency dependence of the loss tangent, tan δ, of undoped lead iodide (PbI 2) crystals in the dark has been investigated in the range 0.1-15 kHz at different ambient temperatures ( T=15-120 °C) without and with DC biasing ( V⩽2 V). Thermal annealing of as-grown PbI 2 crystals modified both the magnitude and frequency dependence of their tan δ. The tan δ-ƒ data ( T=17 °C) of unbiased as-grown crystals were found to fit a tan δ∝ƒ - m dependence, with m˜0.94 in the range 100 Hz <ƒ<10 kHz. After annealing these crystals at T=70 °C for 1 h, the tan δ∝ƒ - m relation was obeyed for unbiased samples at any T over most of the frequency range studied, with the exponent m being reduced to around 0.55; a behavior that was also found for isothermally annealed PbI 2 crystals when were DC biased, but at high ambient temperatures. The tan δ- T data (ƒ=1 kHz) of the unbiased prolonged annealed ( T=120 °C) PbI 2 crystals exhibited two different thermally activated regimes, with activation energies Ea˜0.23 and 0.087 eV in the ranges 75-120 °C and 15-75 °C, respectively, which were related to trapping cationic Pb +2-vacancies/hole-impurity levels in the crystal band gap. An interpolytypic phase transformation of the 2H-PbI 2 upon isothermal annealing may not, however, be entirely excluded.

  16. Optimal temperature profiles for annealing of GaAs-crystals

    NASA Astrophysics Data System (ADS)

    Metzger, Michael; Backofen, Rainer

    2000-11-01

    The modelling and optimisation of the thermal post-processing for bulk GaAs crystals is described. The annealing takes place in an approximately axisymmetric tube furnace and improves the crystal quality due to a more homogeneous distribution of defects and dopants. For this purpose the crystal has to be heated up to a certain temperature, as fast as possible for economical reasons. The crucial point is to minimise thermally induced stresses during heating. For this optimisation an algorithm based on a reduced order model (ROM) of the heating process is developed. By the aid of this model-predictive control (MPC) algorithm the required time to achieve the annealing temperature was decreased by 30% while the thermoelastic stress in the crystal is reduced by 10% compared to a standard procedure.

  17. Dependency of built-in potential of LaF3/porous-silicon heterostructure prepared by chemical bath deposition technique on the concentration of LaCl3 and annealing temperature

    NASA Astrophysics Data System (ADS)

    Rahman, Md. Hafijur; Ismail, Abu Bakar Md.

    2015-11-01

    Effect of LaCl3 concentration and annealing temperature on the built-in potential of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric acid on the porous silicon (PS) substrate. This enables direct deposition of LaF3 on the pore walls of the PS leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by energy dispersive of X-ray analysis. The built-in potential decreases with LaCl3 concentration and increases with annealing temperature. Therefore, by changing the LaCl3 concentration and annealing temperature quality of the LaF3 layer on PS can be optimized. From the experimental results it can be concluded that lanthanum fluorides can be deposited on the PS surface by the CBD technique, which provides the required passivation for PS. This passivation can enable the PS to be considered as an important material for photonics.

  18. Sign change in the tunnel magnetoresistance of Fe{sub 3}O{sub 4}/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

    SciTech Connect

    Marnitz, L. Rott, K.; Niehörster, S.; Klewe, C.; Meier, D.; Fabretti, S.; Thomas, A.; Reiss, G.; Kuschel, T.; Witziok, M.; Krampf, A.; Kuschel, O.; Schemme, T.; Kuepper, K.; Wollschläger, J.

    2015-04-15

    Magnetite (Fe{sub 3}O{sub 4}) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe{sub 3}O{sub 4}/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe{sub 3}O{sub 4} as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200°C in oxygen atmosphere) during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier.

  19. Luminescence characteristics of nanoporous anodic alumina annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Ilin, D. O.; Vokhmintsev, A. S.; Weinstein, I. A.

    2016-09-01

    Anodic aluminum oxide (AAO) membranes with 100 µm thickness were synthesized in oxalic acid solution under constant current density. Grown samples were annealed in 500-1250 °C range for 5 h in air. Average pore diameter was evaluated using quantitative analysis of SEM images and appeared to be within 78-86 nm diapason. It was found there was a broad emission band in the 350-620 nm region of photoluminescence (PL) spectra in amorphous membranes which is attributed to F-type oxygen deficient centers or oxalic ions. It was shown that intensive red emission caused by Cr3+ (696 nm) and Mn4+ (680 nm) impurities dominates in PL of AAO samples with crystalline α- and δ-phases after annealing at 1100-1250 °C temperatures.

  20. Realizing field-dependent conduction in ZnO nanowires without annealing

    NASA Astrophysics Data System (ADS)

    Burke-Govey, C. P.; Castanet, U.; Warring, H.; Nau, A.; Ruck, B. J.; Majimel, J.; Plank, N. O. V.

    2017-03-01

    We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on–off ratios of 105 and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state.

  1. Realizing field-dependent conduction in ZnO nanowires without annealing.

    PubMed

    Burke-Govey, C P; Castanet, U; Warring, H; Nau, A; Ruck, B J; Majimel, J; Plank, N O V

    2017-03-24

    We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on-off ratios of 10(5) and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state.

  2. Power change in amorphous silicon technology by low temperature annealing

    NASA Astrophysics Data System (ADS)

    Mittal, Ankit; Rennhofer, Marcus; Dangel, Angelika; Duman, Bogdan; Schlosser, Victor

    2015-07-01

    Amorphous silicon (a-Si) is one of the best established thin-film solar-cell technologies. Despite its long history of research, it still has many critical issues because of its defect rich material and its susceptibility to degrade under light also called as Staebler-Wronski effect (SWE). This leads to an increase in the defect density of a-Si, but as a metastable effect it can be completely healed at temperatures above 170 °C. Our study is focused on investigating the behavior of annealing of different a-Si modules under low temperature conditions below 80 °C indicated by successive change of module power. These conditions reflect the environmental temperature impact of the modules in the field, or integrated in buildings as well. The power changes were followed by STC power rating and investigation of module-power evolution under low irradiance conditions at 50 W/m2. Our samples were recovered close to their initial state of power, reaching as high as 99% from its degraded value. This shows the influence of low temperature annealing and light on metastable module behavior in a-Si thin-film modules.

  3. Surface self-diffusion of silicon during high temperature annealing

    SciTech Connect

    Acosta-Alba, Pablo E.; Kononchuk, Oleg; Gourdel, Christophe; Claverie, Alain

    2014-04-07

    The atomic-scale mechanisms driving thermally activated self-diffusion on silicon surfaces are investigated by atomic force microscopy. The evolution of surface topography is quantified over a large spatial bandwidth by means of the Power Spectral Density functions. We propose a parametric model, based on the Mullins-Herring (M-H) diffusion equation, to describe the evolution of the surface topography of silicon during thermal annealing. Usually, a stochastic term is introduced into the M-H model in order to describe intrinsic random fluctuations of the system. In this work, we add two stochastic terms describing the surface thermal fluctuations and the oxidation-evaporation phenomenon. Using this extended model, surface evolution during thermal annealing in reducing atmosphere can be predicted for temperatures above the roughening transition. A very good agreement between experimental and theoretical data describing roughness evolution and self-diffusion phenomenon is obtained. The physical origin and time-evolution of these stochastic terms are discussed. Finally, using this model, we explore the limitations of the smoothening of the silicon surfaces by rapid thermal annealing.

  4. Low temperature annealing of cold-drawn pearlitic steel wire

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Bech, J. I.; Hansen, N.

    2015-08-01

    Cold-drawn pearlitic steel wires are nanostructured and the flow stress at room temperature can reach values above 6 GPa. A typical characteristic of the nanostructured metals, is the low ductility and thermal stability. In order to optimize both the processing and application of the wires, the thermal behaviour is of interest. This has been studied by annealing the wires for 1h at temperatures from ambient temperature to 300 °C (573 K). It is expected that a raising temperature may lead to structural changes and a reduction in strength. The change in strength is however not expected to be large. For this reason we have applied a very precise technique to measure the tensile properties of the wires from a strain of 10-4 to the maximum strain of about 1-2%. The structural changes have also been followed to estimate and relate strength changes to changes in structural parameters and morphology.

  5. The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

    SciTech Connect

    Orak, İ.; Ejderha, K.; Sönmez, E.; Alanyalıoğlu, M.; Turut, A.

    2015-01-15

    The Co/n-GaP nano-Schottky diodes have been fabricated to investigate effect of annealing temperature on the characteristics of the device. DC Magnetron sputtering technique has been used for Co metallic contact. The samples have been annealed for three minutes at 400 °C and 600 °C. XRD analyzes of the devices subjected to thermal annealing process have been investigated. Surface images have been taken with atomic force microscopy (AFM) in order to examine the morphology of the surface of the metal layer before and after the annealing the sample. The current–voltage (I–V) measurements taken at room temperature have shown that the ideality factor and series resistance decrease with the increasing annealing temperature. The ideality factor was found to be 1.02 for sample annealed at 400 °C. Before and after annealing, depending on the temperature measurement, the capacitance–frequency (C–f), and conductance–frequency (G–f) have been measured, and graphs have been plotted.

  6. Effect of post annealing temperatures on microstructures and mechanical properties of cryorolled 5052 aluminium sheet alloy

    NASA Astrophysics Data System (ADS)

    Anas, N. M.; Umar, Z. A. A.; Zuhailawati, H.; Anasyida, A. S.

    2017-07-01

    The effect of post annealing temperature of cryorolled 5052 Al alloy after cryorolling process at 30% thickness reduction was investigated, focusing on the evolution of microstructures and mechanical properties. The evolution of microstructure was investigated using optical microscopy (OM). The mechanical behaviour of the samples have been evaluated through Vickers hardness and tensile test performed at room temperature. The results showed that the post annealing on cryorolled 5052 Al alloy have enhanced the ductility with sacrificing the hardness and strength. The lattice strain of post annealed 5052 Al alloy decreased with increasing of annealing temperatures. The evolution of microstructure of the post annealed 5052 Al alloy showed equiaxed grains at 200°C and grain coarsening as post annealing temperature increases to 350°C. The result of crystallite size confirmed the grain size increased as the post annealing temperature rises.

  7. Investigation of the room temperature annealing peak in ionomers

    SciTech Connect

    Goddard, R.J.; Grady, B.P.; Cooper, S.L.

    1993-12-31

    A number of studies appearing in the literature have documented an endothermic peak in differential scanning calorimetry (DSC) scans for ethylene-methacrylic acid copolymer ionomers which appears only upon annealing at room temperature. This peak has been attributed to either polyethylene crystallites, ionic crystallite, or water absorption. In a novel polyurethane cationomer with a quarternized amine contained in hard segment, the same phenomena has been found in DSC scans when the neutralizing anion is bromine or iodine. Since this material does not crystallize, the authors were able to conclusively eliminate crystallization as the cause of the endotherm. The extended x-ray absorption fine structure (EXAFS) of bromine has been measured to differentiate between water absorption and ionic crystallites. Spectra were collected above and below the temperature corresponding to the endothermic peak. The results of the EXAFS analysis will be presented.

  8. Temperature sensing based on multimodal interference in polymer optical fibers: Room-temperature sensitivity enhancement by annealing

    NASA Astrophysics Data System (ADS)

    Kawa, Tomohito; Numata, Goki; Lee, Heeyoung; Hayashi, Neisei; Mizuno, Yosuke; Nakamura, Kentaro

    2017-07-01

    To date, we have developed a temperature sensor based on multimodal interference in a polymer optical fiber (POF) with an extremely high sensitivity. Here, we experimentally evaluate the influence of annealing (heat treatment) of the POF on the temperature sensitivity at room temperature. We show that the temperature sensitivity is enhanced with increasing annealing temperature, and that, by annealing the POF at 90 °C, we can achieve a temperature sensitivity of +2.17 nm/°C, which is 2.9 times larger than that without annealing (+0.75 nm/°C).

  9. Low-temperature electron irradiation and annealing in pure magnesium

    SciTech Connect

    Simester, J.H.

    1982-01-01

    In this study of magnesium after 1.0 MeV electron irradiations at 1.55/sup 0/K, it has been observed that the damage production rate in Mg is (3.57 +- 0.03) x 10/sup -26/ ..cap omega..cm/(e/sup -/ cm/sup 2/). There is no evidence for thermal annealing up to 4/sup 0/K. The low temperature recovery in magnesium is found to consist of two broad substages between 4 to 14/sup 0/K, both of which exhibit evidence for correlated and uncorrelated recovery processes. The two substages are found to have very different frequency factors for annealing, and there is evidence that the recovery processes in the second substage are influenced by those in the first. A model for recovery is proposed using the split configuration in the plane which explains the first substage as being due to interstitial migration in the basal plane and the second to migration perpendicular to the plane.

  10. Magnetic properties of hexagonal barium ferrite films on Pt/MgO(111) substrates annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Han, Mangui; Zheng, Liang; Deng, Jiangxia; Zheng, Peng; Wu, Qiong; Deng, Longjiang; Qin, Huibin

    2016-09-01

    In this work, hexagonal barium ferrite thin films have been deposited on Pt/MgO(111) substrates by pulsed laser deposition. The anneal temperature dependence of crystal structures, extents of diffusion and magnetic properties have been studied. X-ray diffraction patterns reveal that the crystal structure changes from the hexagonal to the spinel when the anneal temperature increases. The texture with c-axis perpendicular to the film plane and the small c-axis dispersion angles (△ɵc) have been obtained in the film annealed at 950 °C for 10 h. Both the X-ray photoelectron spectroscopy profiles and energy dispersive spectrometer show that the diffusions of Mg2+and Fe3+cations are more obvious when the annealing temperature is higher than 950 °C. The film annealed at 950 °C show anisotropic and hard magnetic properties. The magnetic properties of film annealed at 1050 °C are soft. In order to study the cation diffusions between thin film and substrate, the concentration profiles of cations (Ba2+, Fe3+, Mg2+) have been measured by XPS for a thin film with a thickness of 130 nm annealed at 950°C and 1050°C, as shown in Fig. 3. When Ta is 950°C, as shown in Fig. 3(a), diffusions between the film and the substrate are scarcely detected. However, obvious inter-diffusions have been found for Mg2+ cation and Fe3+ cation when it is annealed at 1050°C. An obvious diffusion has not been found for Ba2+ cation at both annealing temperatures.

  11. Formation of n-type pyrite films from electrodeposited iron sulphides: effect of annealing temperature

    SciTech Connect

    Gomes, A.; Ares, J.R.; Ferrer, I.J.; Silva Pereira, M.I. da; Sanchez, C

    2003-06-19

    The n-type polycrystalline pyrite films were obtained by annealing mackinawite electrodeposited on metallic titanium substrates in sulphur atmosphere in the temperature range 523-773 K. The detailed structural and morphological characterisation of the films shows that an increase of crystallite size and a porosity decrease was achieved by increasing the sulphuration temperature. The measurement of thermoelectric effect indicates that pyrite films present n-type conduction, which is attributed to the diffusion of Ti atoms from the substrate. The Seebeck coefficient varies from -54 to -24 {mu}V/K, depending on pyrite grain size.

  12. Structural phase transformation of as-prepared Mg–Mn nanoferrites by annealing temperature

    SciTech Connect

    Amer, M.A.; Meaz, T.M.; Attalah, S.S.; Ghoneim, A.I.

    2015-12-15

    As-prepared Mg{sub 0.2}Mn{sub 0.8}Fe{sub 2}O{sub 4} nanoferrite samples by coprecipitation method were annealed at different temperatures T. XRD, TEM, IR, VSM and Mössbauer techniques were used to characterize the samples. This study proved the transformation of the sample structure from cubic spinel to Z-type hexagonal phase at 700 °C. This transformation was assigned to Jahn–Teller effect of the Mn{sup 3+} and Fe{sup 2+} ions and/or atomic disorder in the crystal lattice. All the deduced structural parameters were affected by the transformation process. The infrared and structural parameters showed dependence on T, whereas tetrahedral band position did not. TEM images showed agglomeration of the nanoparticles, where the average particle size ranged 25–55 nm and was a little higher than R. Study on the elastic properties proved the weakening of inter-atomic bonds inside the crystal lattice as T increases. The magnetic properties were affected by the transformation process and showed T dependence, whereas M{sub s} and H{sub c} proved dependence on porosity. Hyperfine interaction parameters, area ratio (B/A) and spontaneous magnetization were discussed as functions of T. - Graphical abstract: The XRD patterns of as-prepared (AP) and annealed Mg{sub 0.2}Mn{sub 0.8}Fe{sub 2}O{sub 4} nanoparticles. - Highlights: • As-prepared Mg–Mn nanoferrites were annealed at different temperatures T. • Sample structure was transformed from cubic to Z-type hexagonal with T. • This transformation was attributed to Jahn–Teller effect and atomic disorder. • The deduced parameters were affected by annealing and transformation process. • The porosity was affected the saturation magnetization and coercivity.

  13. Composition dependent thermal annealing behaviour of ion tracks in apatite

    NASA Astrophysics Data System (ADS)

    Nadzri, A.; Schauries, D.; Mota-Santiago, P.; Muradoglu, S.; Trautmann, C.; Gleadow, A. J. W.; Hawley, A.; Kluth, P.

    2016-07-01

    Natural apatite samples with different F/Cl content from a variety of geological locations (Durango, Mexico; Mud Tank, Australia; and Snarum, Norway) were irradiated with swift heavy ions to simulate fission tracks. The annealing kinetics of the resulting ion tracks was investigated using synchrotron-based small-angle X-ray scattering (SAXS) combined with ex situ annealing. The activation energies for track recrystallization were extracted and consistent with previous studies using track-etching, tracks in the chlorine-rich Snarum apatite are more resistant to annealing than in the other compositions.

  14. Effect of High-Temperature Annealing on the Microstructure and Hardness of White Pig Iron

    NASA Astrophysics Data System (ADS)

    Afanas'ev, V. K.; Shcherbedinskii, G. V.; Kol'ba, A. V.; Sochnev, A. V.

    2003-03-01

    The effect of high-temperature annealing of different duration on the microstructure of alloy-free cast iron subjected to thermocycling in the molten state is studied. The variation of the hardness of the obtained white cast iron (without graphite segregations) and of the microhardness of pearlite is determined as a function of the annealing time and the cooling conditions. The influence of the modes of high-temperature annealing on the volume fraction of eutectic cementite is analyzed.

  15. Influence of Annealing Temperature on CZTS Thin Film Surface Properties

    NASA Astrophysics Data System (ADS)

    Feng, Wenmei; Han, Junfeng; Ge, Jun; Peng, Xianglin; Liu, Yunong; Jian, Yu; Yuan, Lin; Xiong, Xiaolu; Cha, Limei; Liao, Cheng

    2017-01-01

    In this work, copper zinc tin sulfide (CZTS) films were deposited by direct current sputtering and the samples were annealed in different oven-set temperatures and atmosphere (Ar and H2S). The surface evolution was investigated carefully by using scanning electron microscopy (SEM), Raman spectroscopy and x-ray photoelectron spectroscopy. The surface of the as-sputtered precursor contained little Cu and large amounts of Zn and Sn. The metallic precursor was continuous and compact without pinholes or cracks. With the increase of the temperature from room temperature to 250°C, Cu atoms diffused to the film surface to form Cu1- x S and covered other compounds. Some small platelets were smaller than 500 nm spreading randomly in the holes of the film surfaces. When the temperature reached 350°C, Zn and Sn atoms began to diffuse to the surface and react with S or Cu1- x S. At 400°C, SEM showed the melting of large particles and small particles with a size from 100 nm to 200 nm in the background of the film surface. Excess Zn segregated towards the surface regions and formed ZnS phase on the surface. In addition, the signal of sodium in the CZTS surface was observed above 400°C. At 600°C, a large amount of regular structures with clear edges and corners were observed in the film surface in SEM images. A clear recrystallized process on the surface was assumed from those observations.

  16. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    PubMed

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

  17. Impact of time-dependent annealing on TiO2 films for CMOS application

    NASA Astrophysics Data System (ADS)

    Gyanan, Mondal, Sandip; Kumar, Arvind

    2017-05-01

    Post-deposition annealing (PDA) is the inherent part of sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. The annealing removes the oxygen vacancies and improves the structural order of dielectric films. The process also reduces the interface related defects and improves the interfacial properties. In this work, we have integrated the sol-gel spin-coating deposited high-κ TiO2 films in MOS. The films are fired at 400°C for the duration of 20, 40, 60 and 80 min. The thicknesses of the films were found to be of ˜ 30 nm using ellipsometry. The (Al/TiO2/p-Si) devices were examined with current-voltage (I-V) and capacitance-voltage (C-V) at room temperature to understand the influence of firing time. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. The accumulation capacitance (Cox), dielectric constant (κ) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25nm, respectively with a low leakage current density (1.09 × 10-6 A/cm2) fired for 80 min at +1 V.

  18. Effects of annealing temperature on the properties of Ga-doped In2O3 Thin Films

    NASA Astrophysics Data System (ADS)

    Cho, Shinho

    2015-10-01

    Ga-doped In2O3 (GIO) thin films were deposited on glass substrates at a growth temperature of 300 °C by using radio-frequency magnetron sputtering. The deposited films were then subjected to rapid thermal annealing (RTA) at various temperatures. The annealed films were characterized by using X-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, and Hall-effect measurements. The optical bandgap, electrical resistivity, and figure of merit of the GIO thin films were found to depend significantly on the RTA temperature. The XRD patterns of the films indicated that all the films had a body-centered cubic structure, with the primary peak being the (222) diffraction peak. The average optical transmittance of the GIO thin films for wavelengths of 500 - 1100 nm increased from 44.5% before annealing to 87.2% after annealing at 450 °C; the figure of merit was also the highest after annealing at this temperature. These results indicate that the properties of GIO thin films can be varied by controlling the RTA temperature.

  19. The effects of annealing temperature on CIGS solar cells by sputtering from quaternary target with Se-free post annealing

    NASA Astrophysics Data System (ADS)

    Zhang, Leng; Zhuang, Daming; Zhao, Ming; Gong, Qianming; Guo, Li; Ouyang, Liangqi; Sun, Rujun; Wei, Yaowei; Zhan, Shilu

    2017-08-01

    For the two-step method of Cu(In,Ga)Se2 (CIGS) fabrication process in which the selenization step follows the CIGS precursors deposition step, H2Se gas is employed as the selenium source, which may lead to an inhomogeneous gas field and potentially hazardous working condition. In this paper, a method based on sputtering a Se-rich target to deposit CIGS precursor with subsequent annealing in selenium-free atmosphere to obtain CIGS absorber has been proposed. The influence of the annealing temperature on CIGS films and devices has been investigated. It is found that the grain growth of CIGS films is enhanced by the increase of the annealing temperature ranged from 450 °C to 525 °C, which results in the increase of the short circuit current and efficiency of the solar cell. The devices with absorber layers annealed at 525 °C exhibited the best efficiency of 11.8%. However, when the temperature increases further, amount of selenium vacancies appear which might result in the enhancement of recombination rate of free carriers and reduction of the conversion efficiency. Finally, Ohmic contact between Mo and CIGS is found to form for the devices by this method.

  20. The Effect of Annealing Above Glass Transition Temperature on the Optical Properties of Se85Te10Bi5 Thin Films

    NASA Astrophysics Data System (ADS)

    Atyia, H. E.; Farid, A. S.

    2016-01-01

    Se85Te10Bi5 films have been deposited using the thermal evaporation technique. Films with different thicknesses in the thickness range 590.2-273.9 nm were annealed at different annealing temperatures above the glass transition temperature for 120 min. The structure of the annealed films was checked by x-ray diffraction analysis, which indicated a polycrystalline nature for all annealed films, and that the degree of crystallinity increased with increasing annealing temperature. From the reflectance ( R) and transmittance ( T) measurements, the values of the optical absorption coefficient ( α) for the annealed films were estimated to be in the wavelength range of 500-2500 nm. Analysis of the absorption coefficient data reveals allowed indirect transitions and the values of optical band gap ( E g). The values of ( E g) were found to be obeying the Tauc's relation and decreasing with increasing annealing temperature. This behavior is discussed as due to thermal disordering with the structural changes upon annealing. Optical parameters such as lattice and the infinite frequency dielectric constant as ( ɛ L and ɛ ∞), plasma frequency ( ω p), carrier concentration to the effective mass ratio ( N/m*), single- oscillator and dispersion energies ( E o and E d) were found. The dependence of the optical parameters on the annealing temperature was studied and discussed.

  1. Dielectric response of capacitor structures based on PZT annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Kamenshchikov, Mikhail V.; Solnyshkin, Alexander V.; Pronin, Igor P.

    2016-12-01

    Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540-570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance-voltage (C-V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

  2. Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

    NASA Technical Reports Server (NTRS)

    Danchenko, V.; Fang, P. H.; Brashears, S. S.

    1982-01-01

    Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

  3. Structure and stress studies of low temperature annealed W/Si multilayers for the X-ray telescope.

    PubMed

    Huang, Qiushi; Zhang, Jinshuai; Qi, Runze; Yang, Yang; Wang, Fengli; Zhu, Jie; Zhang, Zhong; Wang, Zhanshan

    2016-07-11

    Low stress W/Si multilayer mirrors are demanded in the hard X-ray telescopes to achieve the high angular resolution. To reduce the stress of the as-deposited multilayer and maintain a high reflectivity, two groups of low-temperature annealing experiments were performed on the periodic multilayers with a d-spacing of ~3.8 nm. The temperature-dependent experiments show that the 150 °C annealing can slightly increase the reflectivity while the stress reduced only by 24%. Higher temperature annealing induced a larger reduction of the stress and the multilayer reached an almost zero stress state at 250 °C. The stress relaxation was accompanied by a small drop of reflectivity of ≤5% and a period compaction of <0.02 nm. The time-dependent experiments indicate that most of the stress changes occurred within the first 10 minutes while a prolonged annealing is not useful. The X-ray scattering and transmission electron microscopy were further used to study the microstructure changes of the multilayers. It is found that the W/Si multilayer exhibits an amorphous structure before and after annealing, while an enhanced diffusion and intermixing is the main reason for the stress relaxation and structure changes.

  4. Estimation of effective temperatures in a quantum annealer: Towards deep learning applications

    NASA Astrophysics Data System (ADS)

    Realpe-Gómez, John; Benedetti, Marcello; Perdomo-Ortiz, Alejandro

    Sampling is at the core of deep learning and more general machine learning applications; an increase in its efficiency would have a significant impact across several domains. Recently, quantum annealers have been proposed as a potential candidate to speed up these tasks, but several limitations still bar them from being used effectively. One of the main limitations, and the focus of this work, is that using the device's experimentally accessible temperature as a reference for sampling purposes leads to very poor correlation with the Boltzmann distribution it is programmed to sample from. Based on quantum dynamical arguments, one can expect that if the device indeed happens to be sampling from a Boltzmann-like distribution, it will correspond to one with an instance-dependent effective temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling processes. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the quantum-assisted training of Boltzmann machines, which can serve as a building block for deep learning architectures. This work was supported by NASA Ames Research Center.

  5. Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

    SciTech Connect

    Zolper, J.C.; Han, J.; Biefeld, R.M.

    1997-06-01

    The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at {approximately}1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N{sub 2}/NH{sub 3} ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity.

  6. High-Temperature Annealing by Subatmospheric-Pressure Radio-Frequency Capacitively Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Miyake, Masatoshi; Yokogawa, Ken'etsu

    2012-08-01

    High-temperature annealing was performed by a novel annealing system using subatmospheric-pressure radio-frequency capacitively coupled plasma (SAP-CCP). The heating characteristics and stability of discharge were studied. An electrode temperature of 1900 °C was obtained with a stable and uniform glow-like discharge. Also, the characteristics of annealing were investigated using silicon wafers implanted with boron ions accelerated by 5 kV at doses of 2.0×1015 cm-2. The sheet resistance decreased with increasing annealing temperature in the same manner as in conventional rapid thermal annealing. As a result, a sheet resistance of 86 Ω/sq was successfully achieved at an electrode temperature of 1080 °C without any surface roughness.

  7. Effect of low and high temperature anneal on process-induced damage of gate oxide

    SciTech Connect

    King, J.C.; Hu, C. . Dept. of Electrical Engineering and Computer Sciences)

    1994-11-01

    The authors have investigated the ability of high and low temperature anneals to repair the gate oxide damage due to simulated electrical stress caused by wafer charging resulting from plasma etching, etc. Even 800 C anneal cannot restore the stability in interface trap generation. Even 900 C anneal cannot repair the deteriorated charge-to-breakdown and oxide charge trapping. As a small consolation, the ineffectiveness of anneal in repairing the process-induced damage allows them to monitor the damages even at the end of the fabrication process.

  8. Energy dependence on formation of TiO{sub 2} nanofilms by Ti ion implantation and annealing

    SciTech Connect

    Liu, Yichao; Ren, Feng Cai, Guangxu; Zhou, Xiaodong; Hong, Mengqing; Li, Wenqing; Xiao, Xiangheng; Wu, Wei; Jiang, Changzhong

    2014-03-01

    Graphical abstract: - Highlights: • Fabrication of TiO{sub 2} films by ion implantation and annealing strongly depends on ion energy. • Best photocatalytic activity is achieved in the TiO{sub 2} nanofilm annealed at 1000 °C. • Phase transformation of TiO{sub 2} appears under annealing temperature of 900 °C. - Abstract: TiO{sub 2} nanofilms were fabricated by a solid-phase-growth progress. The silica glass slides were implanted with Ti ions to the fluence of 1.84 × 10{sup 17} ions/cm{sup 2} at accelerate voltages of 20, 50, and 80 kV, respectively. The samples were annealed in oxygen atmosphere at 700, 800, 900, and 1000 °C for 4 h, respectively. The influence of the ion energy and the annealing temperature on the formation and phase transformation of the TiO{sub 2} films was studied. It was found that anatase TiO{sub 2} nanofilms instead of embedded rutile TiO{sub 2} nanoparticles on the substrate surfaces when the energy of implanted Ti atoms was 20 kV.

  9. Effect of Solution Annealing Temperatures on the Crevice Corrosion Mode of Alloy 22

    SciTech Connect

    El-Dasher, B S; Etien, R; Torres, S G

    2005-10-31

    The effect of solution annealing temperature on the observed corrosion attack mode in Alloy 22 welds was assessed. Three types of specimens were examined, including the as-welded state, solution annealed for 20 minutes at 1121 C, and solution annealed for 20 minutes at 1200 C. The microstructures of the specimens were first mapped using electron backscatter diffraction to determine the grain structure evolution due to solution annealing. The specimens were then subjected to electrochemical testing in a 6 molal NaCl + 0.9 molal KNO{sub 3} environment to initiate crevice corrosion. Examination of the specimen surfaces after corrosion testing showed that in the as-welded specimen, corrosion was present in both the weld dendrites as well as around the secondary phases. However, the specimen solution annealed at 1121 C showed corrosion only at secondary phases and the specimen annealed at 1200 C showed pitting corrosion only in a handful of grains.

  10. Ion implantation doping and high temperature annealing of GaN

    SciTech Connect

    Zolper, J.C.; Crawford, M.H.; Howard, A.J. |

    1995-12-31

    The III-V nitride-containing semiconductors InN, GaN, and AIN and their ternary alloys are the focus of extensive research for application to visible light emitters and as the basis for high temperature electronics. Recent advances in ion implantation doping of GaN and studies of the effect of rapid thermal annealing up to 1100{degrees}C are making new device structures possible. Both p- and n-type implantation doping of GaN has been achieved using Mg co-implanted with P for p-type and Si-implantation for n-type. Electrical activation was achieved by rapid thermal anneals in excess of 1000{degrees}C. Atomic force microscopy studies of the surface of GaN after a series of anneals from 750 to 1100{degrees}C shows that the surface morphology gets smoother following anneals in Ar or N{sub 2}. The photoluminescence of the annealed samples also shows enhanced bandedge emission for both annealing ambients. For the deep level emission near 2.2 eV, the sample annealed in N{sub 2} shows slightly reduced emission while the sample annealed in Ar shows increased emission. These annealing results suggest a combination of defect interactions occur during the high temperature processing.

  11. Influence of annealing temperature on the magnetic properties of Cr+ implanted AlN thin films

    NASA Astrophysics Data System (ADS)

    Shah, A.; Mahmood, Arshad; Ali, Zahid; Ashraf, T.; Ahmed, Ishaq; Mehmood, Mazhar; Rashid, Rashad; Shakir, Imran

    2015-04-01

    Diluted magnetic semiconductor (DMS) AlN:Cr films were produced by implanting various doses Cr+ ions into AlN thin films at room temperature followed by a thermal annealing process. The structural and magnetic characteristics of the samples were investigated as a function of annealing temperature by means of Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Structural analyzes demonstrate that implantation damages gradually decrease with the increasing of annealing temperature. Moreover, better recrystallization in the implanted part of the samples was observed for the sample annealed at 950 °C. Both XRD and Raman pattern illustrate that no secondary phase or metal related-peaks were appear in all the samples. Magnetic analysis reveals that annealed Cr+-implanted samples exhibit ferromagnetism at room temperature, however, the sample annealed at 950 °C shows improved magnetic characteristics. The saturation magnetization is estimated to be 9.0×10-5 emu/g and the coercive field (Hc) is approximately 200 Oe for the samples annealed 950 °C. In SQUID analysis, FC/ZFC measurements indicate that the Curie temperature (TC) is well above room temperature.

  12. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  13. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  14. Effect of anodizing voltage and annealing temperature on the growth of titanium dioxide nanotube

    NASA Astrophysics Data System (ADS)

    Ainuddin, Ainun Rahmahwati; Sulaiman, Mohammad Syazwan

    2017-04-01

    Self-aligned TiO2 nanotube array were produced by anodizing of pure Ti foil in ethylene glycol electrolyte at different anodizing voltages and annealing temperature. The morphologies of the oxide produced were compared. It appers that the nanotubes formed are clearer showing significant changes based on the anodizing voltages and annealing temperature. The TiO2 nanotubes formed were increased in diameter as the anodizing voltages increased. The annealed TiO2 shows the decreasing in surface roughness as the temperature increased.

  15. Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

    PubMed Central

    Lu, Qifeng; Zhao, Chun; Mu, Yifei; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R.

    2015-01-01

    A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrOx; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N2 ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 1012 cm−2 for as-deposited sample to 4.55 × 1012 cm−2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10−6 A/cm2 at Vg = +0.5 V for the as-deposited sample to 10−3 A/cm2 at Vg = +0.5 V for the 900 °C annealed one. PMID:28793475

  16. Temperature driven annealing of perforations in bicellar model membranes.

    PubMed

    Nieh, Mu-Ping; Raghunathan, V A; Pabst, Georg; Harroun, Thad; Nagashima, Kazuomi; Morales, Hannah; Katsaras, John; Macdonald, Peter

    2011-04-19

    Bicellar model membranes composed of 1,2-dimyristoylphosphatidylcholine (DMPC) and 1,2-dihexanoylphosphatidylcholine (DHPC), with a DMPC/DHPC molar ratio of 5, and doped with the negatively charged lipid 1,2-dimyristoylphosphatidylglycerol (DMPG), at DMPG/DMPC molar ratios of 0.02 or 0.1, were examined using small angle neutron scattering (SANS), (31)P NMR, and (1)H pulsed field gradient (PFG) diffusion NMR with the goal of understanding temperature effects on the DHPC-dependent perforations in these self-assembled membrane mimetics. Over the temperature range studied via SANS (300-330 K), these bicellar lipid mixtures exhibited a well-ordered lamellar phase. The interlamellar spacing d increased with increasing temperature, in direct contrast to the decrease in d observed upon increasing temperature with otherwise identical lipid mixtures lacking DHPC. (31)P NMR measurements on magnetically aligned bicellar mixtures of identical composition indicated a progressive migration of DHPC from regions of high curvature into planar regions with increasing temperature, and in accord with the "mixed bicelle model" (Triba, M. N.; Warschawski, D. E.; Devaux, P. E. Biophys. J.2005, 88, 1887-1901). Parallel PFG diffusion NMR measurements of transbilayer water diffusion, where the observed diffusion is dependent on the fractional surface area of lamellar perforations, showed that transbilayer water diffusion decreased with increasing temperature. A model is proposed consistent with the SANS, (31)P NMR, and PFG diffusion NMR data, wherein increasing temperature drives the progressive migration of DHPC out of high-curvature regions, consequently decreasing the fractional volume of lamellar perforations, so that water occupying these perforations redistributes into the interlamellar volume, thereby increasing the interlamellar spacing. © 2011 American Chemical Society

  17. Temperature Driven Annealing of Perforations in Bicellar Model Membranes

    SciTech Connect

    Nieh, Mu-Ping; Raghunathan, V.A.; Pabst, Georg; Harroun, Thad; Nagashima, K; Morales, H; Katsaras, John; Macdonald, P

    2011-01-01

    Bicellar model membranes composed of 1,2-dimyristoylphosphatidylcholine (DMPC) and 1,2-dihexanoylphosphatidylcholine (DHPC), with a DMPC/DHPC molar ratio of 5, and doped with the negatively charged lipid 1,2-dimyristoylphosphatidylglycerol (DMPG), at DMPG/DMPC molar ratios of 0.02 or 0.1, were examined using small angle neutron scattering (SANS), {sup 31}P NMR, and {sup 1}H pulsed field gradient (PFG) diffusion NMR with the goal of understanding temperature effects on the DHPC-dependent perforations in these self-assembled membrane mimetics. Over the temperature range studied via SANS (300-330 K), these bicellar lipid mixtures exhibited a well-ordered lamellar phase. The interlamellar spacing d increased with increasing temperature, in direct contrast to the decrease in d observed upon increasing temperature with otherwise identical lipid mixtures lacking DHPC. {sup 31}P NMR measurements on magnetically aligned bicellar mixtures of identical composition indicated a progressive migration of DHPC from regions of high curvature into planar regions with increasing temperature, and in accord with the 'mixed bicelle model' (Triba, M. N.; Warschawski, D. E.; Devaux, P. E. Biophys. J.2005, 88, 1887-1901). Parallel PFG diffusion NMR measurements of transbilayer water diffusion, where the observed diffusion is dependent on the fractional surface area of lamellar perforations, showed that transbilayer water diffusion decreased with increasing temperature. A model is proposed consistent with the SANS, {sup 31}P NMR, and PFG diffusion NMR data, wherein increasing temperature drives the progressive migration of DHPC out of high-curvature regions, consequently decreasing the fractional volume of lamellar perforations, so that water occupying these perforations redistributes into the interlamellar volume, thereby increasing the interlamellar spacing.

  18. Influence of annealing temperature on photoluminescence properties and optical constants of N-doped ZnO thin films grown on muscovite mica substrates

    NASA Astrophysics Data System (ADS)

    Kim, Younggyu; Leem, Jae-Young

    2015-11-01

    A sol-gel spin-coating method was used to synthesize N-doped ZnO (NZO) thin films on muscovite mica substrates; the films were then annealed at 200, 300, 400, and 500 °C. The effects of the annealing temperature on their photoluminescence properties and optical constants were investigated. All the films had strong UV emissions in their photoluminescence spectra, but the green emissions at 2.4 eV were observed only for the annealed films. The average transmittance of all the films was about 80% in the visible range and the absorption edges in the UV range at 375 nm depended strongly on the annealing temperature. The optical band gap of the films decreased gradually as the annealing temperature was increased up to 400 °C, and the Urbach energy decreased significantly as the annealing temperature increased. Finally, the various optical constants, the dielectric constant, and the optical conductivity were measured for the un-annealed film and the film annealed at 500 °C.

  19. High temperature annealing of fission tracks in fluorapatite, Santa Fe Springs oil field, Los Angeles Basin, California

    USGS Publications Warehouse

    Naeser, Nancy D.; Crowley, Kevin D.; McCulloh, Thane H.; Reaves, Chris M.; ,

    1990-01-01

    Annealing of fission tracks is a kinetic process dependent primarily on temperature and to a laser extent on time. Several kinetic models of apatite annealing have been proposed. The predictive capabilities of these models for long-term geologic annealing have been limited to qualitative or semiquantitative at best, because of uncertainties associated with (1) the extrapolation of laboratory observations to geologic conditions, (2) the thermal histories of field samples, and (3) to some extent, the effect of apatite composition on reported annealing temperatures. Thermal history in the Santa Fe Springs oil field, Los Angeles Basin, California, is constrained by an exceptionally well known burial history and present-day temperature gradient. Sediment burial histories are continuous and tightly constrained from about 9 Ma to present, with an important tie at 3.4 Ma. No surface erosion and virtually no uplift were recorded during or since deposition of these sediments, so the burial history is simple and uniquely defined. Temperature gradient (???40??C km-1) is well established from oil-field operations. Fission-track data from the Santa Fe Springs area should thus provide one critical field test of kinetic annealing models for apatite. Fission-track analysis has been performed on apatites from sandstones of Pliocene to Miocene age from a deep drill hole at Santa Fe Springs. Apatite composition, determined by electron microprobe, is fluorapatite [average composition (F1.78Cl0.01OH0.21)] with very low chlorine content [less than Durango apatite; sample means range from 0.0 to 0.04 Cl atoms, calculated on the basis of 26(O, F, Cl, OH)], suggesting that the apatite is not unusually resistant to annealing. Fission tracks are preserved in these apatites at exceptionally high present-day temperatures. Track loss is not complete until temperatures reach the extreme of 167-178??C (at 3795-4090 m depth). The temperature-time annealing relationships indicated by the new data

  20. Different annealing temperature suitable for different Mg doped P-GaN

    NASA Astrophysics Data System (ADS)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

    2017-04-01

    In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

  1. Effect of annealing temperature on the stress and structural properties of Ge core fibre

    NASA Astrophysics Data System (ADS)

    Zhao, Ziwen; Cheng, Xueli; Xue, Fei; He, Ting; Wang, Tingyun

    2017-09-01

    Effect of annealing temperature on the stress and structural properties of a Ge core fibre via the molten core drawing (MCD) method is investigated using Raman spectroscopy, Scanning electronic microscopy (SEM), and X-ray diffraction. The experimental results showed that the Raman peak position of the Ge fibre shifted from 297.6 cm-1 to 300.5 cm-1, and the FWHM value decreased from 4.53 cm-1 to 4.31 cm-1, when the annealing is carried out at 700 °C, 800 °C, and 900 °C, respectively. For the Ge core annealed at 900 °C, an apparent crystal grain can be seen in the SEM image, and the diffraction peaks of the (3 3 1) plane are generated in the X-ray diffraction spectra. These results show that optimising the annealing temperature allows the release of the residual stress in the Ge core. When the Ge core fibre is annealed at 900 °C, it exhibits the lowest residual stress and the highest crystal quality, and the quality improvement relative to that of the sample annealed at 800 °C is significant. Hence, annealing at around 900 °C can greatly improve the quality of a Ge core fibre. Further performance improvement of the Ge core fibre by annealing techniques can be anticipated.

  2. Thermal annealing dependence of high-frequency magnetoimpedance in amorphous and nanocrystalline FeSiBCuNb ribbons.

    PubMed

    Hernando, B; Prida, V M; Sanchez, M L; Olivera, J; Garcia, C; Santos, J D; Alvarez, P; Sánchez, J L Ll; Perov, N

    2008-06-01

    The magnetoimpedance (MI) effect in Fe73.5Si13.5B9Nb3Cu1 melt-spun amorphous ribbons has been studied in the frequency range (1-500 MHz). Isothermal heating treatments in a furnace have been employed to nanocrystallize the ribbons (1 h at 565 degrees C in a vacuum of 10(-3) mbar), while other samples were annealed at lower temperatures (400 and 475 degrees C during 1 h), in order to evaluate the influence of the annealing temperature on the MI effect. The high-frequency impedance was measured using a technique based on the reflection coefficient measurements of a specific transmission line by using a network analyzer. Frequency dependence of the MI ratio, DeltaZ/Z, and both resistive, DeltaR/R, and reactive, DeltaX/X, components of magnetoimpedance were measured in the amorphous and annealed states, at different temperatures. A maximum value of the MI ratio of about 50% at a driving frequency of 18 MHz is obtained in the nanocrystalline (annealed at 565 degrees C) ribbon. Maxima for DeltaR/R of about 81% at 85 MHz and DeltaX/X around 140% at 5 MHz were also achieved. It is revealed that the microstructural evolution in the nanocrystalline sample leads to a magnetic softening, an optimum domain structure and a permeability which is sensitive to frequency and applied magnetic field, generating a large MI response.

  3. Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts

    NASA Astrophysics Data System (ADS)

    Han, Lin-Chao; Shen, Hua-Jun; Liu, Ke-An; Wang, Yi-Yu; Tang, Yi-Dan; Bai, Yun; Xu, Heng-Yu; Wu, Yu-Dong; Liu, Xin-Yu

    2014-12-01

    Tung's model was used to analyze anomalies observed in Ti/SiC Schottky contacts. The degree of the inhomogeneous Schottky barrier after annealing at different temperatures is characterized by the ‘T0 anomaly’ and the difference (△Φ) between the uniformly high barrier height (ΦB0) and the effective barrier height (ΦBeff). Those two parameters of Ti Schottky contacts on 4H—SiC were deduced from I-V measurements in the temperature range of 298 K-503 K. The increase in Schottky barrier (SB) height (ΦB) and decrease in the ideality factor (n) with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the Schottky barrier depends on the annealing temperature, and it is at its lowest for 500-°C thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on Schottky contacts in other aspects.

  4. Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature

    NASA Astrophysics Data System (ADS)

    Park, M. G.; Choi, W. S.; Boo, J.-H.; Kim, Y. T.; Yoon, D. H.; Hong, B.

    2002-06-01

    n this work, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiCa:H) films on annealing temperature (T_a) and radio frquency (RF) power. The substrate temperature (T_s was 250 °C, the RF power was varied from 30 W to 400 W, and the range of T_s, was from 400 °C to 600 °C. The a-SiC:H films were deposited by using PECVD (plasma enhanced chemical vapor deposition) system on Coming glass and p-type Si (100) wafer with a SiH4+CH4 gas tnudiue. The experimental results have shown that the optical band gap energy (E_g) of the aSiC:H thin films changed little with the annealing temperature while Eg increased with the RF power. The Raman spectnrn of the thin films annealed at high temperatures showed that graphitization of carbon clusters and rnicrocrystalline silicon occurs. The current voltage characteristics have shown good electrical properties in relation to the annealed films.

  5. Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

    SciTech Connect

    Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao; Wang, Yiqian; Ross, Guy G.; Barba, David

    2014-07-01

    Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

  6. Boron diffusion layer formation using Ge cryogenic implantation with low-temperature microwave annealing

    NASA Astrophysics Data System (ADS)

    Murakoshi, Atsushi; Harada, Tsubasa; Miyano, Kiyotaka; Harakawa, Hideaki; Aoyama, Tomonori; Yamashita, Hirofumi; Kohyama, Yusuke

    2016-04-01

    It is shown that a low-sheet-resistance p-type diffusion layer with a small diffusion depth can be fabricated efficiently by cryogenic boron and germanium implantation combined with low-temperature (400 °C) microwave annealing. Compared with the conventional annealing at 1000 °C, a much smaller diffusion depth is obtained at the same sheet resistance. The low sheet resistance at 400 °C is due to microwave absorption in the surface amorphous layer, which is formed by cryogenic germanium implantation. However, the pn junction leakage was worse than that in conventional annealing, because crystal defects remain near the amorphous/crystal interface after microwave annealing. It is found that the pn junction leakage is improved greatly by cryogenic germanium implantation. These results show that a suitable combination of cryogenic implantation and microwave annealing is very promising for p-type diffusion layer technology.

  7. Photoelectrochemical conversion in a WO3 coated p-Si photoelectrode: Effect of annealing temperature

    NASA Astrophysics Data System (ADS)

    Yoon, Ki Hyun; Shin, Choul Woo; Kang, Dong Heon

    1997-05-01

    The photoelectrochemical properties of a p-type silicon (100) electrode coated with tungsten oxide thin film were investigated as a function of annealing temperature. The variation in the annealing temperature affected the photocurrent of a WO3/p-Si electrode. A maximum photocurrent was obtained when the 500 Å WO3 thin film coated p-Si electrode was annealed at 350 °C for 1 h. A further increase in the annealing temperature and film thickness degraded the photocurrent. This can be explained in terms of electrical resistivity, carrier concentration, and depletion layer width. A WO3 thin film deposition on the p-Si shifted the flatband potential of the p-Si electrode by 0.3 V in the anodic direction, resulting in an improvement in conversion efficiency. These results are supported by x-ray diffraction, Auger electron spectroscopy, and capacitance measurements.

  8. Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

    PubMed

    Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

    2016-04-20

    The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

  9. Electrochromic performance, wettability and optical study of copper manganese oxide thin films: Effect of annealing temperature

    NASA Astrophysics Data System (ADS)

    Falahatgar, S. S.; Ghodsi, F. E.; Tepehan, F. Z.; Tepehan, G. G.; Turhan, İ.

    2014-01-01

    In the present work, the nanostructured copper manganese oxide (CMO) thin films were prepared from acetate based sol-gel precursors and deposited on glass and indium tin oxide (ITO) substrates by dip-coating technique. The films were annealed at 300, 400 and 500 °C in ambient atmosphere. The effects of annealing temperature on structural, morphological, wettability, electrochromic and optical properties of CMO thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDX), water contact angle measurement (WCA), cyclic voltammetry (CV) measurements and ultraviolet-visible (UV-vis) spectrophotometery. The presence of mixed oxide phases comprising of copper manganese oxide (CuMn2O4) and manganese oxide at different annealing temperature was confirmed by XRD patterns. The results showed that the Mn3O4 phase has been changed to Mn2O3 when the annealing temperature is increased from 300 to 500 °C. The FESEM images indicated that the granular surface morphology was sensitive to annealing temperature. EDX studies indicated that the thin films contained O, Mn and Cu species. Wettability studies showed that the water contact angle of the nanostructured CMO thin films coated on glass substrates was influenced by the variation of annealing temperature and the surface nature of thin films was changed from hydrophilic to hydrophobic. The results of CVs measurement indicated that the anodic and cathodic charge density and capacitance of all CMO samples decreased with increasing scan rate in potential range of -1-1 eV. Also, the annealed CMO thin film at 500 °C showed better electrochromic performance with respect to other samples at lower scan rate. The thickness, refractive index, extinction coefficient and optical band gap of thin films coated on glass substrates were calculated from reflectance and transmittance spectra using an iterative numerical method. The optical band gap of

  10. Effect of annealing temperature on properties of RF sputtered Cu(In,Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Yu, Zhou; Yan, Chuanpeng; Yan, Yong; Zhang, Yanxia; Huang, Tao; Huang, Wen; Li, Shasha; Liu, Lian; Zhang, Yong; Zhao, Yong

    2012-09-01

    Cu(In,Ga)Se2 (CIGSe) thin films were prepared by radio frequency (RF) magnetron sputtering at room temperature, following vacuum annealing at different temperatures. We have investigated the effect of annealing temperature (150-550 °C) on the phase transformation process of the CIGSe films. The as-deposited precursor films show a near stoichiometry composition and amorphous structure. Composition loss of the films mainly occur in the annealing temperature range of 150-300 °C. Comparing with samples annealed at 300 °C, films annealed at 350 °C or higher temperatures exhibit almost similar composition and polycrystalline chalcopyrite structure. Crystal quality of the films improves with increasing annealing temperature. Reflectance spectra of the annealed films show interference fringe pattern. The calculated refractive indexes of the films are in the range of 2.4-2.5.

  11. Investigation of solvent annealing time dependence on morphology formation in polystyrene-block-polylactide thin films

    NASA Astrophysics Data System (ADS)

    Gnabasik, Ryan; Nelson, Gunnar; Baruth, Andrew

    2015-03-01

    Solvent vapor annealing exposes a block polymer film to the vapors of one or more solvents, swelling the film. This process increases polymer mobility and can direct a self-assembly process by tuning the surface energy. Despite its efficacy to produce well-ordered, periodic nanostructures, no standardized production scheme exists. This is primarily due to a lack of understanding the intricate role multiple, incommensurate parameters play. By analogy to thermal annealing of elemental solids, the time a thin film spends in an equilibrium solvent concentration is one factor that will dictate the degree of ordering. To elucidate, optimized annealing conditions for perpendicular cylinder forming polystyrene-block-polylactide exist at solvent concentrations just below the order-disorder transition, where the kinetic and thermal processes required for recrystallization and crystal growth are optimally fast (similar to thermal annealing). By use of a purpose-built, climate-controlled solvent annealing chamber, we map out the annealing time dependence for non-optimized solvent concentrations. Namely, at lower solvent concentrations, where mobility is limited, longer times are required for large lateral correlation lengths. In situ spectral reflectance monitors solvent concentration, regulated viaa mass-flow controlled solvent inlet, offering precision control over annealing. Atomic force microscopy, in conjunction with O2 plasma etching, provides 3-dimensional imaging of the nanoscale morphology. This work was funded by NASA Nebraska Space Grant.

  12. Ni cluster formation in low temperature annealed Ni50.6Ti49.4

    NASA Astrophysics Data System (ADS)

    Pourbabak, Saeid; Wang, Xiebin; van Dyck, Dirk; Verlinden, Bert; Schryvers, Dominique

    Various low temperature treatments of Ni50.6Ti49.4 have shown an unexpected effect on the martensitic start temperature. Periodic diffuse intensity distributions in reciprocal space indicate the formation of short pure Ni strings along the <111> directions in the B2 ordered lattice, precursing the formation of Ni4Ti3 precipitates formed at higher annealing temperatures.

  13. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    NASA Technical Reports Server (NTRS)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  14. Effect of annealing temperature on the pitting corrosion resistance of super duplex stainless steel UNS S32750

    SciTech Connect

    Tan Hua; Jiang Yiming; Deng Bo; Sun Tao; Xu Juliang; Li Jin

    2009-09-15

    The pitting corrosion resistance of commercial super duplex stainless steels SAF2507 (UNS S32750) annealed at seven different temperatures ranging from 1030 deg. C to 1200 deg. C for 2 h has been investigated by means of potentiostatic critical pitting temperature. The microstructural evolution and pit morphologies of the specimens were studied through optical/scanning electron microscope. Increasing annealing temperature from 1030 deg. C to 1080 deg. C elevates the critical pitting temperature, whereas continuing to increase the annealing temperature to 1200 deg. C decreases the critical pitting temperature. The specimens annealed at 1080 deg. C for 2 h exhibit the best pitting corrosion resistance with the highest critical pitting temperature. The pit morphologies show that the pit initiation sites transfer from austenite phase to ferrite phase as the annealing temperature increases. The aforementioned results can be explained by the variation of pitting resistance equivalent number of ferrite and austenite phase as the annealing temperature changes.

  15. Tailoring the magnetic properties and magnetorheological behavior of spinel nanocrystalline cobalt ferrite by varying annealing temperature.

    PubMed

    Sedlacik, Michal; Pavlinek, Vladimir; Peer, Petra; Filip, Petr

    2014-05-14

    Magnetic nanoparticles of spinel nanocrystalline cobalt ferrite were synthesized via the sol-gel method and subsequent annealing. The influence of the annealing temperature on the structure, magnetic properties, and magnetorheological effect was investigated. The finite crystallite size of the particles, determined by X-ray diffraction and the particle size observed via transmission electron microscopy, increased with the annealing temperature. The magnetic properties observed via a vibrating sample magnetometer showed that an increase in the annealing temperature leads to the increase in the magnetization saturation and, in contrast, a decrease in the coercivity. The effect of annealing on the magnetic properties of ferrite particles has been explained by the recrystallization process at high temperatures. This resulted in grain size growth and a decrease in an imposed stress relating to defects in the crystal lattice structure of the nanoparticles. The magnetorheological characteristics of suspensions of ferrite particles in silicone oil were measured using a rotational rheometer equipped with a magnetic field generator in both steady shear and small-strain oscillatory regimes. The magnetorheological performance expressed as a relative increase in the magnetoviscosity appeared to be significantly higher for suspensions of particles annealed at 1000 °C.

  16. Fast simulated annealing with a multivariate Cauchy distribution and the configuration's initial temperature

    NASA Astrophysics Data System (ADS)

    Lee, Chang-Yong

    2015-05-01

    We propose a multi-dimensional fast simulated annealing method based on a multivariate Cauchy probability distribution and an initial temperature estimated from the configuration's variation. While conventional multi-dimensional fast simulated annealing adopts the product of onedimensional random variables generated by a univariate Cauchy distribution, the proposed method generates a random vector from a multivariate Cauchy distribution. In this way, fast simulated annealing for a multi-dimensional problem maintains the same annealing schedule as that for the one-dimensional case. The proposed method also utilizes the initial temperature estimated from the configuration's variation to generate a candidate state in addition to the conventional initial temperature derived from the variation of the objective function for the acceptance probability. The proposed method is shown not only to guarantee a fast annealing schedule but also to enhance the search capability. The proposed method was tested against the optimization of real-valued functions. We empirically found that the configuration's initial temperature, together with multivariate Cauchy distribution, is more suitable than the conventional scheme for a fast annealing schedule. Moreover, the proposed method outperforms the conventional one in optimization problems having many variables.

  17. Temperature dependent BRDF facility

    NASA Astrophysics Data System (ADS)

    Airola, Marc B.; Brown, Andrea M.; Hahn, Daniel V.; Thomas, Michael E.; Congdon, Elizabeth A.; Mehoke, Douglas S.

    2014-09-01

    Applications involving space based instrumentation and aerodynamically heated surfaces often require knowledge of the bi-directional reflectance distribution function (BRDF) of an exposed surface at high temperature. Addressing this need, the Johns Hopkins University Applied Physics Laboratory (JHU/APL) developed a BRDF facility that features a multiple-port vacuum chamber, multiple laser sources covering the spectral range from the longwave infrared to the ultraviolet, imaging pyrometry and laser heated samples. Laser heating eliminates stray light that would otherwise be seen from a furnace and requires minimal sample support structure, allowing low thermal conduction loss to be obtained, which is especially important at high temperatures. The goal is to measure the BRDF of ceramic-coated surfaces at temperatures in excess of 1000°C in a low background environment. Most ceramic samples are near blackbody in the longwave infrared, thus pyrometry using a LWIR camera can be very effective and accurate.

  18. Surface Superstructure of Carbon Nanotubes on Highly Oriented Pyrolytic Graphite Annealed at Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    An, Bai; Fukuyama, Seiji; Yokogawa, Kiyoshi; Yoshimura, Masamichi

    1998-06-01

    Carbon nanotubes deposited on highly oriented pyrolytic graphite (HOPG) are annealed in ultra high vacuum. The effect of annealing temperature on the surface morphology of the carbon nanotubes on HOPG is examined by scanning tunneling microscopy. The ring-like surface superstructure of (\\sqrt {3}× \\sqrt {3})R30° of graphite is found on the carbon nanotubes annealed above 1593 K. The tips of the carbon nanotubes are destroyed and the stacking misarrangement between the upper and the lower walls of the tube join with HOPG resulting in the superstructure.

  19. Low-temperature illumination and annealing of ultrahigh quality quantum wells

    NASA Astrophysics Data System (ADS)

    Samani, M.; Rossokhaty, A. V.; Sajadi, E.; Lüscher, S.; Folk, J. A.; Watson, J. D.; Gardner, G. C.; Manfra, M. J.

    2014-09-01

    The effects of low-temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the two-dimensional electron gas (2DEG) electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state.

  20. Effect of annealing temperature on the structure and optical parameters of Ge{sub 20}Se{sub 50}Te{sub 30} thin films

    SciTech Connect

    Mohamed, Mansour

    2015-05-15

    Highlights: • The amorphous nature of as prepared Ge{sub 20}Se{sub 50}Te{sub 30} films was confirmed by XRD. • The thermal annealing was found to affect the structure and optical parameter. • Thermal annealing resulted in an appearance of crystalline phases in studied films. • The average particle size increased with increasing the annealing temperature. • The indirect band gap was found to decrease with increasing annealing temperature. - Abstract: Bulk glasses and thin films of Ge{sub 20}Se{sub 50}Te{sub 30} were prepared by melt-quenching and thermal evaporation technique, respectively. The stoichiometry of the composition was checked by energy dispersive X-ray diffraction (EDX), whereas the crystallization was investigated using differential scanning calorimetery (DSC). The effect of heat treatment on the structure transformation of Ge{sub 20}Se{sub 50}Te{sub 30} films was determined by X-ray diffraction (XRD). The XRD results reveal that the as-prepared films are amorphous in nature while the annealed ones show crystalline phases. Further, the average crystallite size, strain, and dislocation density were found to depend on the annealing temperature. The optical transmittance and reflectance of the studied films at different annealing temperatures were measured using spectrophotometer. The optical parameters were calculated as a function of annealing temperature. The optical transition was found to be allowed indirect transition with optical band gap decreases from 1.69 to 1.41 eV with increasing the annealing temperature from 553 to 633 K.

  1. Temperature-dependent μ-Raman investigation of struvite crystals

    NASA Astrophysics Data System (ADS)

    Prywer, Jolanta; Kasprowicz, D.; Runka, T.

    2016-04-01

    The effect of temperature on the vibrational properties of struvite crystals grown from silica gels was systematically studied by μ-Raman spectroscopy. The time-dependent Raman spectra recorded in the process of long time annealing of struvite crystal at 353 K do not indicate structural changes in the struvite crystal with the time of annealing. The temperature-dependent Raman spectra recorded in the range 298-423 K reveal a phase transition in struvite at about 368 K. Above this characteristic temperature, some of bands assigned to vibrations of the PO4 and NH4 tetrahedra and water molecules observed in the Raman spectra in low temperatures (orthorhombic phase) change their spectral parameters or disappear, which indicates a transition to a higher symmetry structure of struvite in the range of high temperatures.

  2. Negative temperature dependence of recrystallized grain size: analytical formulation and experimental confirmation

    NASA Astrophysics Data System (ADS)

    Elmasry, M.; Liu, F.; Jiang, Y.; Mao, Z. N.; Liu, Y.; Wang, J. T.

    2017-01-01

    The catalyzing effect on nucleation of recrystallization from pre-existing grains is analyzed, analogy to the foreign nucleus size effect in heterogeneous nucleation. Analytical formulation of the effective nucleation site for recrystallization leads to a negative temperature dependence of recrystallized grain size. Non-isochronal annealing, where annealing time is set just enough for the completion of recrystallization at different temperature, is conducted on pure copper after severe plastic deformation. More homogeneous and smaller grains are obtained at higher annealing temperature. The good fitting between analytical and experimental results unveils the intrinsic feature of this negative temperature dependence of recrystallized grain size.

  3. Effect of Long Term, High Temperature Annealing on the Strength of Beta''-Alumina Ceramics

    NASA Astrophysics Data System (ADS)

    Rasmussen, James R.; Williams, Roger M.; Kisor, Adam K.

    2003-01-01

    It has been recently reported that subjecting beta''-alumina ceramics to a long term, high temperature anneal for the purpose of reducing the residual sodium aluminate content within the ceramic results in an apparent increase in the strength of the ceramic as well. In order to examine this hypothesis, a carefully controlled experiment was conducted. Ten tubes were cut into 100 rings 1.5 mm long. A third of the rings (randomly selected) were broken in diametral ring fracture tests, while the remaining rings were packaged and shipped to Jet Propulsion Laboratory (JPL) where half of them were annealed, and the other half were unpacked and stored under appropriate dry conditions to act a shipping and handling control group. Once the annealing was completed, both groups of rings were repackaged and returned to Advanced Modular Power Systems (AMPS) and broken in diametral ring tests. The annealed group had the lowest strength as indicated by the Weibull characteristic strengths. Weibull characteristic strengths for the unannealed, control, and annealed groups were 376 MPa, 326 MPa, and 294 MPa, respectively. The Weibull moduli of the unannealed and annealed groups were nominally the same at 9.0 and 8.6, respectively. That for the handling control group was lower at 6.8. The lower strength of the annealed ceramics is consistent with earlier work showing a decrease in ceramic strength with increasing grain size.

  4. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Gillinger, M.; Schneider, M.; Bittner, A.; Nicolay, P.; Schmid, U.

    2015-02-01

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  5. Effect of ramp rate and annealing temperature on boron transient diffusion in implanted silicon: kinetic Monte Carlo simulations

    SciTech Connect

    Caturla, M. J.; Diaz de la Rubia, T.; Foad, M.

    1998-06-17

    We present results of recent kinetic Monte Carlo simulations of the effect of annealing time and ramp rate on boron transient enhanced diffusion (BTED) in low energy ion implanted silicon. The simulations use a database of defect and dopant energetics derived from first principle calculations. We discuss the complete atomistic details of defect and dopant clustering during the anneals, and the dependence of boron TED on ramp rate. The simulations provide a complete time history of the evolution of the active boron fraction during the anneal for a wide variety of conditions. We also studied the lateral spreading of the boron during the annealing for two different conditions, furnace anneal and ramp anneal.

  6. Influence of Annealing Temperature on Surface Morphological and Electrical Properties of Aluminum Thin Film on Glass Substrate by Vacuum Thermal Evaporator

    NASA Astrophysics Data System (ADS)

    Wibowo, K. M.; Sahdan, M. Z.; Asmah, M. T.; Saim, H.; Adriyanto, F.; Suyitno; Hadi, S.

    2017-08-01

    This paper explains the effects of the annealing temperature on structural and electrical properties of Aluminum (Al) thin films. Al thin films were deposited on glass substrate by thermal vacuum evaporator. The films were then annealed at 100°, 200°, 300°, 400°, and 500°C for 1 hour. The surface morphology of Al films after annealing were characterized using atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). The electrical properties were characterized using four point probe. From the results of this experiment, the roughness of Al films gradually decrease from 8.5 nm (before annealing) to 7.7 nm and the grain size gradually increase from 127 nm to 145 nm, when the temperature of annealing increased. The resistivity of the films was also decreased from 2.32 x 10-5 ohm.cm to 1.9 x 10-5 ohm.cm when the samples were annealed from 100° to < 400°C that depended on roughness. However, when annealed from 400° to 500°C, the resistivity shows dependency on grain size, which result on the increasing of resistivity to 2.77 x10-5 ohm.cm.

  7. Temperature dependency of quantitative ultrasound.

    PubMed

    Pocock, N A; Babichev, A; Culton, N; Graney, K; Rooney, J; Bell, D; Chu, J

    2000-01-01

    Quantitative ultrasound (QUS) parameters are temperature dependent. We examined the effect of temperature on QUS using Lunar Achilles+ and Hologic Sahara units. In vivo studies were performed in a cadaveric foot and in 5 volunteers. QUS scans were performed in the cadaveric foot, using both machines, at temperatures ranging from 15 to 40 degrees C. To assess the effect of change in water bath temperature in the Achilles+, independently of foot temperature, 5 volunteers were studied at water temperatures ranging from 10 to 42 degrees C. In the cadaveric foot there were strong negative correlations between temperature and speed of sound (SOS) but a moderately positive correlation between temperature and broadband ultrasound attenuation (BUA). Stiffness and the Quantitative Ultrasound Index (QUI) in the cadaveric foot showed strong negative correlations with temperature, reflecting their high dependence on SOS. In the 5 volunteers, in whom foot temperature was assumed to be constant, there was a small change in Stiffness in the Achilles+, with variation in water temperature. In conclusion, while there are opposite effects of temperature on SOS and BUA in vivo, there is still a significant effect of temperature variation on Stiffness and the QUI. This may have clinical significance in particular subjects. The precision of QUS may be affected by temperature variation of the environment or of the patient's limb. Instruments utilizing a water bath may be able partly to compensate for changes in environmental temperature, but standardization of water bath temperature is crucial to maximize precision.

  8. Investigation the cause of plasma treatment for low temperature annealed dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zen, Shungo; Komatsu, Yuta; Ono, Ryo

    2015-09-01

    Dye-sensitized solar cells (DSSCs) require annealing of TiO2photoelectrodes at 450 C to 550 C. However, such high-temperature annealing is unfavorable because it limits the use of materials that cannot withstand high temperatures, such as plastic substrates. In our previous paper, a low temperature annealing technique of TiO2 photoelectrodes using ultraviolet light and dielectric barrier discharge treatments was proposed to reduce the annealing temperature from 450 C to 150 C for a TiO2 paste containing an organic binder. Here, we investigated the cause of plasma treatment via the Nyquist diagram (Cole-Cole plot) of DSSCs. The Nyquist diagram was masured with a frequency response analyzer (NF Corporation, FRA5022) under 100 mW/cm2 illumination of a calibrated xenon lamp (Hamamatsu L2274, 150W). The lifetime of the electrons, the effective electron diffusion coefficient, and the electron diffusion length of TiO2 photoelectrodes were determined by analyzing the Nyquist diagrams. As a result of analyzing the Nyquist diagrams, it was shown that plasma treatment can reduce the electron transport resistance and promote the necking of Hot UV annealed TiO2 nanoparticles. This work was supported by Grant-in-Aid for JSPS Fellows.

  9. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  10. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  11. Estimation of effective temperatures in quantum annealers for sampling applications: A case study with possible applications in deep learning

    NASA Astrophysics Data System (ADS)

    Benedetti, Marcello; Realpe-Gómez, John; Biswas, Rupak; Perdomo-Ortiz, Alejandro

    2016-08-01

    An increase in the efficiency of sampling from Boltzmann distributions would have a significant impact on deep learning and other machine-learning applications. Recently, quantum annealers have been proposed as a potential candidate to speed up this task, but several limitations still bar these state-of-the-art technologies from being used effectively. One of the main limitations is that, while the device may indeed sample from a Boltzmann-like distribution, quantum dynamical arguments suggest it will do so with an instance-dependent effective temperature, different from its physical temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the learning of a special class of a restricted Boltzmann machine embedded on quantum hardware, which can serve as a building block for deep-learning architectures. We also provide a comparison to k -step contrastive divergence (CD-k ) with k up to 100. Although assuming a suitable fixed effective temperature also allows us to outperform one-step contrastive divergence (CD-1), only when using an instance-dependent effective temperature do we find a performance close to that of CD-100 for the case studied here.

  12. Ambient dependence of the phase of nanowires grown by annealing brass

    SciTech Connect

    Srivastava, Himanshu; Ganguli, Tapas; Tiwari, Pragya; Srivastava, A. K.; Deb, S. K.

    2012-06-05

    The growth of oxide nanowires has been studied by the annealing of brass (Cu 65%, Zn 35%) at different annealing temperatures and in different ambient. The annealing temperature was varied from 400 deg. C to 650 deg. C. Scanning Electron Microscope (SEM) results showed that the temperature has a significant effect on the density and size of the nanowires. The annealing temperature of 600 deg. C was found to be optimum for the growth of nanowires. The growth at 600 deg. C was observed in two ambient-air and moist nitrogen. Selected Area Electron Diffraction (SAED) and Energy Dispersive Spectroscopy (EDS) results on Transmission Electron Microscope (TEM) showed that with changing the ambient from air to moist nitrogen, the phase of the nanowires changed from Zn doped CuO to Cu doped ZnO. This result can be of significance importance as it suggests the use of ambient for the tuning of phase of oxide nanowires and in turn for the tuning of their physical properties.

  13. Increased cubic-tetragonal phase transition temperature and resistivity hysteresis of surface vacuum annealed SrTiO3

    NASA Astrophysics Data System (ADS)

    Nestler, Tina; Potzger, Kay; Stöcker, Hartmut; Abendroth, Barbara; Strohmeyer, Ralph; Zierer, Robert; Meyer, Dirk C.

    2011-10-01

    Electrical properties of SrTiO3 single crystal samples treated by an anisotropic surface annealing technique under reducing conditions have been investigated in the temperature range of 35 K-300 K. Optical and atomic force microscopy show that annealing gives rise to polycrystallization and the formation of colored dendritic structures. Carrier concentrations and mobilities determined by Hall measurements as well as resistivities detected by van der Pauw measurements show the expected metallic behavior due to oxygen vacancy doping. Moreover, the temperature dependent resistivities indicate a cubic-to-tetragonal phase transition, which to our knowledge has not been reported before. Additionally, the transition occurred up to 53 K above the known bulk transition temperature T C at 105 K with a hysteresis up to a temperature of 220 K. Both phenomena possibly arise from dislocations and associated strain fields introduced by surface annealing that are assumed to lower the free energy of the tetragonal phase and simultaneously pin tetragonal domains. Thus, microregions of the tetragonal phase persist above T C causing the hysteresis in resistivity up to ˜12%. This effect possibly provides new chances for future oxide based non-volatile data-storage devices.

  14. Isotopic dependence of nuclear temperatures

    SciTech Connect

    Su Jun; Zhang Fengshou

    2011-09-15

    A systematic study of isotope temperatures has been presented for heavy-ion collisions at 600 MeV/nucleon via the isospin-dependent quantum molecular dynamics model in the company of the statistical decay model (GEMINI). We find that the isospin dependence of the isotope temperatures in multifragmentation is weak; however, this effect is still visible over a wide isotopic range. The isotope temperatures for the neutron-rich projectiles are larger than those for the neutron-poor projectiles. We also find that the isotope temperatures calculated by the model decrease with increasing nuclear mass.

  15. Reflectance reduction of InP wafers after high-temperature annealing.

    PubMed

    Semyonov, Oleg G; Subashiev, Arsen V; Shabalov, Alexander; Lifshitz, Nadia; Chen, Zhichao; Hosoda, Takashi; Luryi, Serge

    2012-08-01

    Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in a wide spectral range from ultraviolet to infrared. The effect is due to formation of thermal oxide layers on the surfaces of the wafer with optical parameters favorable for antireflection.

  16. Temperature effects on failure and annealing behavior in dynamic random access memories

    SciTech Connect

    Wilkin, N.O.; Self, C.T.

    1982-12-01

    Total dose failure levels and long time anneal characteristics of dynamic random access memories are measured while the devices are exercised under actual use conditions. These measurements were performed over the temperature range of -60 C to +70 C. The total dose failure levels are shown to decrease with increasing temperature. The anneal characteristics are shown to result in both an increase and decrease in the measured number of errors as a function of time. Finally a description of the test instrumentation and irradiation procedures are given.

  17. Temperature effects on failure and annealing behavior in dynamic random access memories

    NASA Astrophysics Data System (ADS)

    Wilkin, N. D.; Self, C. T.

    1982-12-01

    Total dose failure levels and long time anneal characteristics of dynamic random access memories are measured while the devices are exercised under actual use conditions. These measurements were performed over the temperature range of -60 C to +70 C. The total dose failure levels are shown to decrease with increasing temperature. The anneal characteristics are shown to result in both an increase and decrease in the measured number of errors as a function of time. Finally a description of the test instrumentation and irradiation procedures are given.

  18. Low temperature thermoluminescence of annealed LiF:Mg, Cu, P

    NASA Astrophysics Data System (ADS)

    Yang, B.; Gao, H.; Townsend, P. D.

    2006-06-01

    Two main thermoluminescence peaks at 123 and 135 K, plus some weaker features near 65, 95, 242 and 265 K, have been observed in LiF:Mg, Cu, P dosimeter samples that had been annealed at 240 °C. The photon wavelengths in the main peaks span the spectral range from 250 to 470 nm and the maximum intensity is near 310 nm. The origin of these main TL peaks at 123 and 135 K are discussed in terms of a range of defect complexes linked to intrinsic defects. In particular the temperatures match the annealing stages for defect perturbed F-H and VK-e type recombination, respectively. The 65 K feature is considered as the result of electron-hole recombination via relaxed exciton decay. These models suggest reasons for the differences between the various emission bands and the longer wavelength emission linked to high temperature electron decay processes. High temperature annealing modifies the component low temperature TL features with annealing up to ∼300 °C resulting in low temperature TL signal loss, but with partial recovery found for all the low temperature TL peaks when the samples were annealed at higher temperatures up to 390 °C. It is suggested that the intensity loss and the recovery are the summation of numerous effects from a wide range of defect complex variations which exist in these heavily doped materials. The low temperature data offer further insights into the changes which occur in the structures related to optimising the high temperature TL dosimetry.

  19. Effect of annealing temperature on wettability of TiO2 nanotube array films.

    PubMed

    Yang, Lei; Zhang, Miao; Shi, Shiwei; Lv, Jianguo; Song, Xueping; He, Gang; Sun, Zhaoqi

    2014-01-01

    Highly ordered TiO2 nanotube array (TN) films were prepared by anodization of titanium foil in a mixed electrolyte solution of glycerin and NH4F and then annealed at 200°C, 400°C, 600°C, and 800°C, respectively. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), water contact angle (WCA), and photoluminescence (PL). It was found that low temperature (below 600°C) has no significant influence on surface morphology, but the diameter of the nanotube increases from 40 to 50 nm with increasing temperature. At 800°C, the nanotube arrays are completely destroyed and only dense rutile film is observed. Samples unannealed and annealed at 200°C are amorphous. At 400°C, anatase phase appears. At 600°C, rutile phase appears. At 800°C, anatase phase changes into rutile phase completely. The wettability of the TN films shows that the WCAs for all samples freshly annealed at different temperatures are about 0°. After the annealed samples have been stored in air for 1 month, the WCAs increase to 130°, 133°, 135°, 141°, and 77°, respectively. Upon ultraviolet (UV) irradiation, they exhibit a significant transition from hydrophobicity to hydrophilicity. Especially, samples unannealed and annealed at 400°C show high photoinduced hydrophilicity.

  20. Annealing temperature effect on the properties of untreated and treated copper films with oxygen plasma

    NASA Astrophysics Data System (ADS)

    Hojabri, Alireza; Hajakbari, Fatemeh; Soltanpoor, Nasrin; Hedayati, Maryam Sadat

    2014-06-01

    In this work, the copper films were deposited on quartz substrates by DC magnetron sputtering method and then, the prepared films were annealed in air atmosphere at different annealing temperatures. Before annealing, some of the copper films, treated by oxygen plasma, for comparison of the results. The structural and morphological properties of the films have been investigated using X-ray diffraction (XRD), atomic force microscopy, and four point probe techniques. XRD results exhibited that the cuprous oxide phase changes to cupric oxide by enhancing of annealing temperatures. Also, oxygen plasma treatment can cause the better crystallinity for the prepared copper oxide films. The results confirm that oxygen plasma treatment, affected the crystal size, grain size, average roughness, sheet resistivity and strain of the films. The optical characteristics of the oxygen plasma treated films, such as refractive index, extinction coefficient and absorption coefficient were calculated by straight forward method proposed by Swanepoel using transmittance measurements. Moreover it was found that annealing temperature augmentation lead to decrease the optical band gap energy calculated using Tauc's relation from 2.45 to 1.80 eV.

  1. Quantum-annealing correction at finite temperature: Ferromagnetic p -spin models

    NASA Astrophysics Data System (ADS)

    Matsuura, Shunji; Nishimori, Hidetoshi; Vinci, Walter; Albash, Tameem; Lidar, Daniel A.

    2017-02-01

    The performance of open-system quantum annealing is adversely affected by thermal excitations out of the ground state. While the presence of energy gaps between the ground and excited states suppresses such excitations, error correction techniques are required to ensure full scalability of quantum annealing. Quantum annealing correction (QAC) is a method that aims to improve the performance of quantum annealers when control over only the problem (final) Hamiltonian is possible, along with decoding. Building on our earlier work [S. Matsuura et al., Phys. Rev. Lett. 116, 220501 (2016), 10.1103/PhysRevLett.116.220501], we study QAC using analytical tools of statistical physics by considering the effects of temperature and a transverse field on the penalty qubits in the ferromagnetic p -body infinite-range transverse-field Ising model. We analyze the effect of QAC on second (p =2 ) and first (p ≥3 ) order phase transitions, and construct the phase diagram as a function of temperature and penalty strength. Our analysis reveals that for sufficiently low temperatures and in the absence of a transverse field on the penalty qubit, QAC breaks up a single, large free-energy barrier into multiple smaller ones. We find theoretical evidence for an optimal penalty strength in the case of a transverse field on the penalty qubit, a feature observed in QAC experiments. Our results provide further compelling evidence that QAC provides an advantage over unencoded quantum annealing.

  2. Radiation intensification of the reactor pressure vessels recovery by low temperature heat treatment (wet annealing)

    NASA Astrophysics Data System (ADS)

    Krasikov, E.

    2015-04-01

    As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. There are two approaches to annealing. The first one is so-called «dry» high temperature (∼475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment. The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible.

  3. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

    PubMed

    Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

    2016-04-27

    The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

  4. High temperature annealing of MgO based perpendicular MTJ with Co/Pd multilayers

    NASA Astrophysics Data System (ADS)

    Tofizur Rahman, M.; Lyle, Andrew; Zhao, Hui; Wang, Jian-Ping

    2010-03-01

    MgO based perpendicular MTJ (pMTJ) are becoming increasing demanded due to their thermal stability and unlimited cell aspect ratio [1]. Promising results are reported for pMTJs with TbFeCo or Co/Pt (Pd,Ni) MLs but these materials could not withstand high temperature annealing above 250^oC. However, annealing at or above 300^oC is required to fully crystallize the MgO. We fabricated Sub/Pd/(Co/Pd)n/CoFeB/MgO/CoFeB/Pd/(Co/Pd)n/Pd pMTJ structure by engineering the exchange coupling between CoFeB and (Co/Pd)n and the interface morphology of Co and Pd in (Co/Pd)n layers and annealed at different temperatures up to 350^oC. To clarify the thermal effects on free layer completely, we also studied the annealing of free layer only. The perpendicular squareness of the free layer and the full stack after annealing at 350^oC are 0.90 and 1, respectively. The existence of good perpendicular anisotropy at high temperature is ascribed to the sharp and defect free interfaces. Field and spin torque switching results will also be presented.[4pt] [1] H.Meng, APL, 88, 172506 (2006),]M. Nakayama, JAP, 103, 07A710.

  5. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

    PubMed Central

    Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

    2016-01-01

    The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature. PMID:28773440

  6. Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

    NASA Astrophysics Data System (ADS)

    Akbarnejad, E.; Ghorannevis, Z.; Abbasi, F.; Ghoranneviss, M.

    2017-03-01

    Cadmium sulfide (CdS) thin films are deposited on the fluorine doped tin oxide coated glass substrate using the radio frequency magnetron sputtering setup. The effects of annealing in air on the structural, morphological, and optical properties of CdS thin film are studied. Optimal annealing temperature is investigated by annealing the CdS thin film at different annealing temperatures of 300, 400, and 500 °C. Thin films of CdS are characterized by X-ray diffractometer analysis, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR spectrophotometer and four point probe. The as-grown CdS films are found to be polycrystalline in nature with a mixture of cubic and hexagonal phases. By increasing the annealing temperature to 500 °C, CdS film showed cubic phase, indicating the phase transition of CdS. It is found from physical characterizations that the heat treatment in air increased the mean grain size, the transmission, and the surface roughness of the CdS thin film, which are desired to the application in solar cells as a window layer material.

  7. Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

    NASA Astrophysics Data System (ADS)

    Akbarnejad, E.; Ghorannevis, Z.; Abbasi, F.; Ghoranneviss, M.

    2016-12-01

    Cadmium sulfide (CdS) thin films are deposited on the fluorine doped tin oxide coated glass substrate using the radio frequency magnetron sputtering setup. The effects of annealing in air on the structural, morphological, and optical properties of CdS thin film are studied. Optimal annealing temperature is investigated by annealing the CdS thin film at different annealing temperatures of 300, 400, and 500 °C. Thin films of CdS are characterized by X-ray diffractometer analysis, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR spectrophotometer and four point probe. The as-grown CdS films are found to be polycrystalline in nature with a mixture of cubic and hexagonal phases. By increasing the annealing temperature to 500 °C, CdS film showed cubic phase, indicating the phase transition of CdS. It is found from physical characterizations that the heat treatment in air increased the mean grain size, the transmission, and the surface roughness of the CdS thin film, which are desired to the application in solar cells as a window layer material.

  8. High-temperature annealing of proton irradiated beryllium – A dilatometry-based study

    DOE PAGES

    Simos, Nikolaos; Elbakhshwan, Mohamed; Zhong, Zhong; ...

    2016-04-07

    S—200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 1020 cm–2 peak fluence and irradiation temperatures in the range of 100–200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was tomore » qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation 4He and 3H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. Here, the study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.« less

  9. High-temperature annealing of proton irradiated beryllium - A dilatometry-based study

    NASA Astrophysics Data System (ADS)

    Simos, Nikolaos; Elbakhshwan, Mohamed; Zhong, Zhong; Ghose, Sanjit; Savkliyildiz, Ilyas

    2016-08-01

    Ssbnd 200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 1020 cm-2 peak fluence and irradiation temperatures in the range of 100-200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was to qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation 4He and 3H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. The study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.

  10. High-temperature annealing of proton irradiated beryllium – A dilatometry-based study

    SciTech Connect

    Simos, Nikolaos; Elbakhshwan, Mohamed; Zhong, Zhong; Ghose, Sanjit; Savkliyildiz, Ilyas

    2016-04-07

    S—200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 1020 cm–2 peak fluence and irradiation temperatures in the range of 100–200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was to qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation 4He and 3H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. Here, the study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.

  11. Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

    NASA Astrophysics Data System (ADS)

    Feng, G.; van Dijken, Sebastiaan; Feng, J. F.; Coey, J. M. D.; Leo, T.; Smith, David J.

    2009-02-01

    Co40Fe40B20/MgO single and double barrier magnetic tunnel junctions (MTJs) were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance (TMR) ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 mT. The lower TMR ratio for double barrier MTJs can be attributed to the amorphous nature of the middle Co40Fe40B20 free layer, which could not be crystallized during postannealing. A highly asymmetric bias voltage dependence of the TMR can be observed for both single and double barrier MTJs in the as-deposited states and after field annealing at low temperature. The asymmetry decreases with increasing annealing temperature and the bias dependence becomes almost symmetric after annealing at 350 °C. Maximum output voltages of 0.65 and 0.85 V were obtained for both single and double barrier MTJs, respectively, after annealing at 300 °C, a temperature which is high enough for large TMR ratios but insufficient to completely remove asymmetry from the TMR bias dependence.

  12. Post-growth annealing of low temperature-grown Sb-doped Si molecular beam epitaxial films

    NASA Astrophysics Data System (ADS)

    Hobart, K. D.; Godbey, D. J.; Thompson, P. E.

    1992-07-01

    Sb-doped Si films have been grown on (100) Si substrates at low temperature (˜350 °C) by molecular beam epitaxy. Through coevaporation with Sb, very high doping efficiencies were achieved over a carrier concentration range of 1×1017 to 1×1020 cm-3. Through calibration of the beam flux we found that the incorporation of Sb was very near unity up to a concentration of ˜5×1019 cm-3. As-grown films are of good quality. However, furnace annealing was shown to improve the mobility and completely activate the Sb. Temperature dependent Hall measurements were used to further characterize the films.

  13. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures

    SciTech Connect

    Devine, R.A.B.; Mathiot, D.; Warren, W.L.; Fleetwood, D.M.

    1993-12-31

    Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

  14. The influence of annealing temperature on the strength of TRISO coated particles

    NASA Astrophysics Data System (ADS)

    van Rooyen, I. J.; Neethling, J. H.; van Rooyen, P. M.

    2010-07-01

    The integrity of the Pebble Bed Modular Reactor (PBMR) fuel, and specifically the SiC layer system of the Tristructural Isotropic (TRISO) coated particle (CP), namely inner pyrolytic carbon, silicon carbide and outer pyrolytic carbon (I-PyC-SiC-O-PyC), determines the containment of fission products. The PBMR fuel consists of TRISO coated particles (CPs) embedded in a graphite matrix. One of the characterization techniques investigated by PBMR is the determination of strength of CPs. It is a well known metallurgical fact that temperature, amongst many other parameters, may influence the strength of a material. A recently developed method for measuring the strength of the TRISO coated particles was used and is briefly described in this article. The advantages of this method are demonstrated by the comparison of strength measurements of five experimental PBMR CP batches as a function of annealing temperature. Significant modification of strength after annealing was measured with increased temperature within the range 1000-2100 °C. The interesting feature of decreasing standard deviation of the strength with increasing temperature will also be discussed with a possible explanation. A significant difference in coated particle strength is also demonstrated for two CP batches with layer thickness on the extremities of the SiC layer thickness specification. The effect of long duration annealing on these strength values will also be demonstrated by comparing results from 1 h to 100 h annealing periods of coated particles at a temperature of 1600 °C.

  15. Electrical properties of Mg doped ZnO nanostructure annealed at different temperature

    SciTech Connect

    Mohamed, R. Mamat, M. H. Rusop, M.; Ismail, A. S.; Khusaimi, Z.

    2016-07-06

    In this work, ZincOxide (ZnO) nanostructures doped with Mg were successfully grown on the glass substrate. Magnesium (Mg) metal element was added in the ZnO host which acts as a doping agent. Different temperature in range of 250°C to 500°C was used in order to investigate the effect of annealing temperature of ZnO thin films. Field Emission Scanning Electron Microscopy (FESEM) was used to investigate the physical characteristic of ZnO thin films. FESEM results have revealed that ZnO nanorods were grown vertically aligned. The structural properties were determined by using X-Ray Diffraction (XRD) analysis. XRD results showed Mg doped ZnO thin have highest crystalinnity at 500°C annealing temperature. The electrical properties were investigating by using Current-Voltage (I-V) measurement. I-V measurement showed the electrical properties were varied at different annealing temperature. The annealing temperature at 500°C has the highest electrical conductance properties.

  16. Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers

    SciTech Connect

    Lee, Tae Young; Chan Won, Young; Su Son, Dong; Lee, Seong-Rae; Ho Lim, Sang

    2013-11-07

    The effects of Co layer thickness and annealing temperature on the perpendicular magnetic anisotropy (PMA) properties of inverted [Pt (0.2 nm)/Co (t{sub Co})]{sub 6} multilayers (where t{sub Co} indicates the thickness of the Co layer) have been investigated. The cross-sectional microstructure, as observed from the high-resolution transmission electron microscope images, shows a clear layered structure with atomically flat interfaces both in the as-deposited state as well as after annealing, indicating the interface effects for PMA. The effective PMA energy density (K{sub eff}) increases significantly with an increase in t{sub Co} from 0.2 to 0.28 nm and then becomes almost saturated with further increases in t{sub Co}, followed by a slight reduction at the highest Co thickness, t{sub Co} = 0.6 nm. In order to explain the t{sub Co} dependence on K{sub eff}, the intrinsic PMA energy density (K{sub i}) is calculated by additionally measuring a similar set of results for the saturation magnetization. The K{sub i} value increases nearly linearly with the increase in t{sub Co} from 0.2 to 0.5 nm, followed by saturation at a higher t{sub Co} value of 0.6 nm. Owing to a close relationship between K{sub i} and the quality of the interfaces, these results indicate a similar t{sub Co} dependence on the quality of the interfaces. This is further supported from the magnetic measurements of the samples annealed at the highest temperature of 500 °C, where a second phase is formed, which show a similar t{sub Co} dependence on the amount of the second phase. The K{sub i} value is nearly independent of the annealing temperature at t{sub Co} ≤ 0.4 nm, above which a substantial reduction is observed, when the annealing temperature exceeds 500 °C.

  17. Effect of anneal temperature on fluorine doped tin oxide (FTO) nanostructured fabricated using hydrothermal method

    NASA Astrophysics Data System (ADS)

    Ahmad, M. K.; Marzuki, N. A.; Soon, C. F.; Nafarizal, N.; Sanudin, R.; Suriani, A. B.; Mohamed, A.; Shimomura, M.; Murakami, K.; Mamat, M. H.; Malek, M. F.

    2017-01-01

    FTO thin films were prepared by the hydrothermal method at anneal temperature of 100°C-400°C using pentahydrate stannic chloride (SnCl4.5H2O) and ammonium fluoride (NH4F) as precursors, and a mixture of DI water, acetone and hydrochloride as a solvent. The X-ray diffraction studies confirmed the tetragonal structure with polycrystalline nature. The preferred directions of crystal growth appeared in the diffractogram of FTO thin films prepared with different anneal temperature were correspond to the reflection from the (101), (200) and (211) planes, respectively. The electrical study reveals that the films have degenerate and exhibit n-type electrical conductivity. For films prepared at 400°C, the relatively higher transmittance of about 85-90% at 800nm has been observed. The transmission attained in this study is greater than the values reported for tin oxide films prepared at anneal temperature 400°C, from an aqueous solution of SnCl4.5H2O precursor. Resistivity is smaller than the value reported. The obtained results revealed that the structures and properties of the films were greatly affected by anneal temperature

  18. Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2 multilayers

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Gambaryan, M. P.; Cherkov, A. G.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2016-08-01

    Germanium and GeSi nanocrystals were synthesized in SiGeO2 glass by high temperature annealings of GeOx(5 nm)/SiO2(5 nm) multilayers. According to electron microscopy data, the size distribution and stoichiometry of the nanocrystals depend on the annealing temperature (700, 800, or 900 °C). Spatial redistribution of Ge with the formation of large faceted nanocrystals located near the Si substrate and GeSi intermixing at the substrate/film interface were observed. In the case of the 900 °C annealed sample, we note that some nanocrystals have a pyramid-like shape. Infrared absorption spectroscopy demonstrates that intermixing takes place between the GeOx and SiO2 layers leading to the formation of SiGeO2 glass. Raman spectroscopy confirms the formation of Ge nanocrystals after annealing at 700 °C and GeSi nanocrystals after annealing at 800 and 900 °C. For all annealed samples, we report the observation of infrared photoluminescence (PL) at low temperatures in the spectral range 1300-2100 nm. The observation of PL at wavelengths close to 2000 nm may be due to defect-induced radiative transitions in the nanocrystals.

  19. Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

    SciTech Connect

    Vinattieri, A.; Batignani, F.; Bogani, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Zhu, D.; Humphreys, C. J.

    2014-02-21

    By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

  20. Alkali doping of graphene: The crucial role of high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Khademi, A.; Sajadi, E.; Dosanjh, P.; Bonn, D. A.; Folk, J. A.; Stöhr, A.; Starke, U.; Forti, S.

    2016-11-01

    The doping efficiency of lithium deposited at cryogenic temperatures on epitaxial and chemical vapor deposition monolayer graphene has been investigated under ultrahigh-vacuum conditions. Change of charge-carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements in low and high doping regimes. It was found that preannealing the graphene greatly enhanced the maximum levels of doping that could be achieved: doping saturated at Δ n =2 ×1013e- /cm2 without annealing, independent of sample type or previous processing; after a 900 K anneal, the saturated doping rose one order of magnitude to Δ n =2 ×1014e- /cm2.

  1. High dopant activation of phosphorus in Ge crystal with high-temperature implantation and two-step microwave annealing

    NASA Astrophysics Data System (ADS)

    Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi

    2016-09-01

    In this letter, high-temperature ion implantation and low-temperature microwave annealing were employed to achieve high n-type active concentrations, approaching the solid solubility limit, in germanium. To use the characteristics of microwave annealing more effectively, a two-step microwave annealing process was employed. In the first annealing step, a high-power (1200 W; 425 °C) microwave was used to achieve solid-state epitaxial regrowth and to enhance microwave absorption. In the second annealing step, contrary to the usual process of thermal annealing with higher temperature, a lower-power (900 W; 375 °C) microwave process was used to achieve a low sheet resistance, 78Ω/◻, and a high carrier concentration, 1.025 × 1020 P/cm3, which is close to the solid solubility limit of 2 × 1020 P/cm3.

  2. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    SciTech Connect

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U.; Nicolay, P.

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  3. Development and stability during high temperature annealing of the cube texture in rolled Ni substrate materials

    NASA Astrophysics Data System (ADS)

    Zhou, Y.; Godfrey, A.; Liu, W.; Han, Z.; Liu, Q.

    2003-04-01

    The development and stability of the cube texture formed during annealing has been investigated, using rolled nickel sheets of 99.95% and 99.999% purity. Microstructure and texture were characterized using electron back-scatter pattern analysis in the scanning electron microscope. The texture following primary recrystallization in both materials showed cube volume fractions of up to 50% and 80% (99.95% and 99.999% Ni respectively). The average grain size of the cube textured grains during recrystallization was larger than for grains of other orientations. For both materials high temperature annealing resulted only in normal grain growth, leading to a significant strengthening of the cube texture. The results are discussed in terms of the relative effects of size, boundary mobility and boundary energy on the process of grain growth. For the 99.999% Ni material an annealing process using a continuous heating ramp to 1200 °C gave a further improvement in the cube texture.

  4. Rapid annealing of severely deformed low carbon steel in subcritical temperature range

    NASA Astrophysics Data System (ADS)

    Ghiabakloo, H.; Kazeminezhad, M.

    2017-09-01

    A low-carbon steel sheet containing 0.05 C, 0.203 Mn, and 0.0229 Si (all in wt%) was rapidly annealed in a temperature range of 300 °C to 600 °C after severe plastic deformation by using constrained groove pressing (CGP) technique. Microstructure evolution was investigated by scanning electron and optical microscopes. Mechanical properties were evaluated by hardness measurements and shear punch test. The results showed a thermal stability up to 400 °C where recrystallization did not occur in the specimens even after 7200 s. This thermal stability is in agreement with previously reported results of conventional annealing of the same steel after CGP. However, annealing at 500 °C and 600 °C led to recrystallization which started after holding times of 600 s and 20 s, respectively. Longer holding times resulted to grain growth and deterioration of strength and hardness, but the final strength and hardness were still higher than those of conventionally annealed specimens. The reason has been attributed to no abnormal grain growth in the present study, in contrast to that occurs after conventional annealing of CGPed low carbon steel. The kinetics of recrystallization at 600 °C was studied using the celebrated Johnson-Mehl-Avrami-Kolmogorov (JMAK) model; the results showed a bi-linear JMAK plot indicating two different stages of recrystallization rate before and after 70% recrystallization.

  5. Influence of annealing temperature and environment on the properties of indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Beling, C. D.; Fung, S.; Djurisic, A. B.; Ling, C. C.; Kwong, C.; Li, S.

    2005-06-01

    Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300°C but drastically drops at 400°C when they are annealed in forming gas (mixed N2 and H2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400°C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films.

  6. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    SciTech Connect

    Schmid, A. Schroeter, Ch.; Otto, R.; Heitmann, J.; Schuster, M.; Klemm, V.; Rafaja, D.

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  7. Asymptotics in Time, Temperature and Size for Optimization by Simulated Annealing: Theory, Practice and Applications

    DTIC Science & Technology

    1990-01-19

    and studying the growth of this bound as the tem- perature approaches zero asymptotically. Simulated annealing with a time varying temperature gives...rise to a time inhomogeneous Markov chain. This Markov chain is difficult to analyze and study due to the time-inhomogeneity. We have been able to...problem. Moreover, we can study the growth of this bound as the temperature approaches zero or skewness becomes arbitrarily large; thereby, providing

  8. Effect of annealing temperature on the structural reorganization of Eu3+ optical centers in Al2O3-Eu2O3-BiOF gel films

    NASA Astrophysics Data System (ADS)

    Malashkevich, G. E.; Kornienko, A. A.; Dunina, E. B.; Prusova, I. V.; Shevchenko, G. P.; Bokshits, Yu. V.

    2007-06-01

    The dependence of the structural reorganization of Eu3+ optical centers in Al2O3-Eu2O3-BiOF films on the annealing temperature has been investigated. It is shown by the methods of crystal field theory and computer simulation that the increase in the annealing temperature from 700 to 1100 °C leads to removal of bismuth from Eu-O-Bi complex centers with the C 3V symmetry in the Al2O3 structure and the change in symmetry from D 3 to O h for a large fraction of EuAlO3 centers.

  9. Effect of annealing temperature on microstructure and superelastic properties of a Ti-18Zr-4.5Nb-3Sn-2Mo alloy.

    PubMed

    Fu, Jie; Kim, Hee Young; Miyazaki, Shuichi

    2017-01-01

    In this study a new superelastic Ti-18Zr-4.5Nb-3Sn-2Mo alloy was prepared by adding 2at% of Mo as a substitute for Nb to the Ti-18Zr-11Nb-3Sn alloy, and heat treatment at different temperatures was conducted. The temperature dependence of superelasticity and annealing texture was investigated. Texture showed a dependence of annealing temperature: the specimen annealed at 923K for 0.3ks exhibited {113}β<47¯1>β type texture which was similar to the deformation texture, while specimens annealed at 973, 1073K, and 1173K showed {001}β<110>β type recrystallization texture which was preferable for recovery strain. The largest recovery strain of 6.2%, which is the same level as that of the Ti-18Zr-11Nb-3Sn alloy, was obtained in the specimen annealed at 1173K for 0.3ks due to the well-developed {001}β<110>β type recrystallization texture. The Ti-18Zr-3Nb-3Sn-2Mo alloy presented a higher tensile strength compared with the Ti-18Zr-11Nb-3Sn alloy when heat treated at 1173K for 0.3ks, which was due to the solid solution strengthening effect of Mo. Annealing at 923K for 0.3ks was effective in obtaining a good combination of a high strength as 865MPa and a large recovery strain as 5.6%. The high recovery strain was due to the high stress at which the maximum recovery stain was obtained which was attributed to the small grain size formed at low annealing temperature. Copyright © 2016 Elsevier Ltd. All rights reserved.

  10. GeSi nanocrystals formed by high temperature annealing of GeO/SiO2 multilayers: structure and optical properties

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Cherkov, A. G.; Vdovin, V. I.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2016-12-01

    The structural and optical properties of Ge and GeSi nanocrystals, formed by annealing of GeO/SiO2 multilayers have been investigated. According to Raman spectroscopy, the formation of pure Ge nanocrystals is observed after post growth annealing at 700 °C. Annealings at 800°C-900°C leads to the formation of intermixed GexSi1-x nanocrystals. High resolution transmission electron microscopy shows that the structure and the size of the nanocrystals strongly depend on annealing temperature. Spatial redistribution of Ge with the formation of large faceted clusters located near the Si substrate as well as GeSi intermixing at the substrate/film interface were observed. In the case of the sample containing 20 pairs of GeO/SiO2 layers annealed at 900 °C, some clusters exhibit a pyramid-like shape. FTIR absorption spectroscopy measurements demonstrate that intermixing between the GeO and SiO2 layers occurs leading to the formation of a SiGeO2 glass. Low temperature (10 K-100 K) photoluminescence was observed in the spectral range 1400-2000 nm for samples containing nanocrystals. The temperature dependence of the photoluminescence is studied.

  11. Effect of low temperature anneals and nonthermal treatments on the properties of gap fill oxides used in SiGe and III-V devices

    NASA Astrophysics Data System (ADS)

    Ryan, E. Todd; Morin, Pierre; Madan, Anita; Mehta, Sanjay

    2016-07-01

    Silicon dioxide is used to electrically isolate CMOS devices such as fin field effect transistors by filling gaps between the devices (also known as shallow trench isolation). The gap fill oxide typically requires a high temperature anneal in excess of 1000 °C to achieve adequate electrical properties and oxide densification to make the oxide compatible with subsequent fabrication steps such as fin reveal etch. However, the transition from Si-based devices to high mobility channel materials such as SiGe and III-V semiconductors imposes more severe thermal limitations on the processes used for device fabrication, including gap fill oxide annealing. This study provides a framework to quantify and model the effect of anneal temperature and time on the densification of a flowable silicon dioxide as measured by wet etch rate. The experimental wet etch rates allowed the determination of the activation energy and anneal time dependence for oxide densification. Dopant and self-diffusion can degrade the channel material above a critical temperature. We present a model of self-diffusion of Ge and Si in SiGe materials. Together these data allowed us to map the thermal process space for acceptable oxide wet etch rate and self-diffusion. The methodology is also applicable to III-V devices, which require even lower thermal budget. The results highlight the need for nonthermal oxide densification methods such as ultraviolet (UV) and plasma treatments. We demonstrate that several plasma treatments, in place of high temperature annealing, improved the properties of flowable oxide. In addition, UV curing prior to thermal annealing enables acceptable densification with dramatically reduced anneal temperature.

  12. Role of annealing temperatures on the evolution of microstructure and properties of Cr2O3 films

    NASA Astrophysics Data System (ADS)

    He, Nairu; Ji, Li; Liu, Xiaohong; Li, Hongxuan; Zhou, Huidi; Chen, Jianmin

    2015-12-01

    Cr2O3 films were deposited on Ni-based high-temperature alloy substrates by using a cathodic arc ion plating system and then annealed in air at different temperatures. The effects of different annealing temperatures on the microstructure, mechanical and tribological properties of the films were examined. Results showed that the as-deposited Cr2O3 films were primarily amorphous with crystallization and vaporization temperatures of 360 °C and 940 °C, respectively. Annealing above the crystallization temperature improved the hardness, adhesion, and wear life of the Cr2O3 films. A mesh-like heave structure comprising Cr2O3 and Cr2Ti7O17 phases formed on the film surface after annealing above the vaporization temperature. The mesh-like heave structure endued the film with excellent tribological properties in a wide temperature range from room temperature (RT) to 1000 °C.

  13. Resonance electromagnetoacoustic method of measuring viscoelastic properties of amorphous ferromagnetic ribbons subjected to low-temperature annealing

    NASA Astrophysics Data System (ADS)

    Len'kov, S. V.; Fedorova, N. V.

    2014-08-01

    Stationary and damped vibrations of the s 0 Lamb mode in a viscoelastic amorphous ferromagnetic ribbon excited upon the electromagnetoacoustic (EMA) transformation have been considered. A resonance method is suggested that employs double EMA transformation for measuring elasticity moduli E and internal friction in amorphous ferromagnetic ribbons. The effect of low-temperature isochronous annealing on the field dependences of Young's modulus and internal friction of the Fe80Si10B10 and Fe73.7Cu1.0Nb3.2Si12.7B9.4 alloys has been studied.

  14. An investigation of temperature measurement methods in nuclear power plant reactor pressure vessel annealing

    SciTech Connect

    Acton, R.U.; Gill, W.; Sais, D.J.; Schulze, D.H.; Nakos, J.T.

    1996-05-01

    The objective of this project was to provide an assessment of several methods by which the temperature of a commercial nuclear power plant reactor pressure vessel (RPV) could be measured during an annealing process. This project was a coordinated effort between DOE`s Office of Nuclear Energy, Science and Technology; DOE`s Light Water Reactor Technology Center at Sandia National Laboratories; and the Electric Power Research Institute`s Non- Destructive Evaluation Center. Ball- thermocouple probes similar to those described in NUREG/CR-5760, spring-loaded, metal- sheathed thermocouple probes, and 1778 air- suspended thermocouples were investigated in experiments that heated a section of an RPV wall to simulate a thermal annealing treatment. A parametric study of ball material, emissivity, thermal conductivity, and thermocouple function locations was conducted. Also investigated was a sheathed thermocouple failure mode known as shunting (electrical breakdown of insulation separating the thermocouple wires). Large errors were found between the temperature as measured by the probes and the true RPV wall temperature during heat-up and cool-down. At the annealing soak temperature, in this case 454{degrees}C [850`F], all sensors measured the same temperature within about {plus_minus}5% (23.6{degrees}C [42.5{degrees}F]). Because of these errors, actual RPV wall heating and cooling rates differed from those prescribed (by up to 29%). Shunting does not appear to be a problem under these conditions. The large temperature measurement errors led to the development of a thermal model that predicts the RPV wall temperature from the temperature of a ball- probe. Comparisons between the model and the experimental data for ball-probes indicate that the model could be a useful tool in predicting the actual RPV temperature based on the indicated ball- probe temperature. The model does not predict the temperature as well for the spring-loaded and air suspended probes.

  15. Luminescence Studies of Residual Damage in Low-Dose Arsenic Implanted Silicon after High-Temperature Annealing

    NASA Astrophysics Data System (ADS)

    Sagara, Akihiko; Hiraiwa, Miori; Shibata, Satoshi; Sugie, Ryuichi; Yamada, Keiichi

    2011-01-01

    In order to prevent the degradation of device performance, it is necessary to detect and reduce residual damage remaining after ion implantation and annealing. In this study, we focused on the high-temperature annealing process after low-dose arsenic (As) implantation in silicon (Si) and evaluated the correlation of annealing conditions and damage by cathodoluminescence (CL) compared to Secondary Ion Mass Spectrometry (SIMS) and Junction Photo-Voltage (JPV) results. Increasing the annealing temperature with the high-heat-up rate, As profile and the sheet resistance didn't change. However, the intensity of the band-to-band transition increased with temperature. This implies the some kind of residual damage remains after low-temperature annealing and it is removed with increasing annealing temperature. On the other hand, with increasing the annealing time at 1200 °C, more As was piled-up at the SiO2/Si interface and the luminescence intensity decreased. We guess this piled-up As is inactive and it may create some kind of damage combined with the defects around the interface, and these damage types cause the suppression of the luminescence intensity. We concluded that the luminescence intensity reflects the various kinds of damage and optical characterization methods have a potential to evaluate defect evolution in annealing process.

  16. The effect of size on the strength of FCC metals at elevated temperatures: annealed copper.

    PubMed

    Wheeler, Jeffrey M; Kirchlechner, Christoph; Micha, Jean-Sébastien; Michler, Johann; Kiener, Daniel

    2016-12-01

    As the length scale of sample dimensions is reduced to the micron and sub-micron scales, the strength of various materials has been observed to increase with decreasing size, a fact commonly referred to as the 'sample size effect'. In this work, the influence of temperature on the sample size effect in copper is investigated using in situ microcompression testing at 25, 200 and 400 °C in the SEM on vacuum-annealed copper structures, and the resulting deformed structures were analysed using X-ray μLaue diffraction and scanning electron microscopy. For pillars with sizes between 0.4 and 4 μm, the size effect was measured to be constant with temperature, within the measurement precision, up to half of the melting point of copper. It is expected that the size effect will remain constant with temperature until diffusion-controlled dislocation motion becomes significant at higher temperatures and/or lower strain rates. Furthermore, the annealing treatment of the copper micropillars produced structures which yielded at stresses three times greater than their un-annealed, FIB-machined counterparts.

  17. The effect of size on the strength of FCC metals at elevated temperatures: annealed copper

    PubMed Central

    Wheeler, Jeffrey M.; Kirchlechner, Christoph; Micha, Jean-Sébastien; Michler, Johann; Kiener, Daniel

    2016-01-01

    Abstract As the length scale of sample dimensions is reduced to the micron and sub-micron scales, the strength of various materials has been observed to increase with decreasing size, a fact commonly referred to as the ‘sample size effect’. In this work, the influence of temperature on the sample size effect in copper is investigated using in situ microcompression testing at 25, 200 and 400 °C in the SEM on vacuum-annealed copper structures, and the resulting deformed structures were analysed using X-ray μLaue diffraction and scanning electron microscopy. For pillars with sizes between 0.4 and 4 μm, the size effect was measured to be constant with temperature, within the measurement precision, up to half of the melting point of copper. It is expected that the size effect will remain constant with temperature until diffusion-controlled dislocation motion becomes significant at higher temperatures and/or lower strain rates. Furthermore, the annealing treatment of the copper micropillars produced structures which yielded at stresses three times greater than their un-annealed, FIB-machined counterparts. PMID:28003795

  18. Tuning phase transition temperature of VO2 thin films by annealing atmosphere

    NASA Astrophysics Data System (ADS)

    Liu, Xingxing; Wang, Shao-Wei; Chen, Feiliang; Yu, Liming; Chen, Xiaoshuang

    2015-07-01

    A simple new way to tune the optical phase transition temperature of VO2 films was proposed by only controlling the pressure of oxygen during the annealing process. Vanadium films were deposited on glass by a large-scale magnetron sputtering coating system and then annealed in appropriate oxygen atmosphere to form the VO2 films. The infrared transmission change (at 2400 nm) is as high as 58% for the VO2 thin film on the glass substrate, which is very good for tuning infrared radiation and energy saving as smart windows. The phase transition temperature of the films can be easily tuned from an intrinsic temperature to 44.7 °C and 40.2 °C on glass and sapphire by annealing oxygen pressure, respectively. The mechanism is: V3+ ions form in the film when under anaerobic conditions, which can interrupt the V4+ chain and reduce the phase transition temperature. The existence of V3+ ions has been observed by x-ray photoelectron spectroscopy (XPS) experiments as proof.

  19. Dielectric relaxation and conduction mechanisms in sprayed TiO2 thin films as a function of the annealing temperature

    NASA Astrophysics Data System (ADS)

    Juma, Albert; Acik, Ilona Oja; Mere, Arvo; Krunks, Malle

    2016-04-01

    The electrical properties of TiO2 thin films deposited by chemical spray pyrolysis onto Si substrates were investigated in the metal-oxide-semiconductor (MOS) configuration using current-voltage characteristics and impedance spectroscopy. The electrical properties were analyzed in relation to the changes in microstructure induced during annealing in air up to a temperature of 950 °C. Anatase to rutile transformation started after annealing at 800 °C, and at 950 °C, only the rutile phase was present. The dielectric relaxation strongly depended upon the microstructure of TiO2 with the dielectric constant for the anatase phase between 45 and 50 and that for the rutile phase 123. Leakage current was reduced by three orders of magnitude after annealing at 700 °C due to the densification of the TiO2 film. A double-logarithmic plot of the current-voltage characteristics showed a linear relationship below 0.12 V consistent with Ohmic conduction, while space-charge-limited conduction mechanism as described by Child's law dominated for bias voltages above 0.12 V.

  20. A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

    SciTech Connect

    Pristavu, G.; Brezeanu, G.; Badila, M.; Pascu, R.; Danila, M.; Godignon, P.

    2015-06-29

    Ni Schottky contacts on SiC have a nonideal behavior, with strong temperature dependence of the electrical parameters, caused by a mixed barrier on the contact area and interface states. A simple analytical model that establishes a quantitative correlation between Schottky contact parameter variation with temperature and barrier height non-uniformity is proposed. A Schottky contact surface with double Schottky barrier is considered. The main model parameters are the lower barrier (Φ{sub Bn,l}) and a p factor which quantitatively evaluates the barrier non-uniformity on the Schottky contact area. The model is validated on Ni/4H-SiC Schottky contacts, post metallization sintered at high temperatures. The measured I{sub F}–V{sub F}–T characteristics, selected so as not to be affected by interface states, were used for model correlation. An inhomogeneous double Schottky barrier (with both nickel silicide and Ni droplets at the interface) is formed by a rapid thermal annealing (RTA) at 750 °C. High values of the p parameter are obtained from samples annealed at this temperature, using the proposed model. A significant improvement in the electrical properties occurs following RTA at 800 °C. The expansion of the Ni{sub 2}Si phase on the whole contact area is evinced by an X-Ray diffraction investigation. In this case, the p factor is much lower, attesting the uniformity of the contact. The model makes it possible to evaluate the real Schottky barrier, for a homogenous Schottky contact. Using data measured on samples annealed at 800 °C, a true barrier height of around 1.73 V has been obtained for Ni{sub 2}Si/4H-SiC Schottky contacts.

  1. A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

    NASA Astrophysics Data System (ADS)

    Pristavu, G.; Brezeanu, G.; Badila, M.; Pascu, R.; Danila, M.; Godignon, P.

    2015-06-01

    Ni Schottky contacts on SiC have a nonideal behavior, with strong temperature dependence of the electrical parameters, caused by a mixed barrier on the contact area and interface states. A simple analytical model that establishes a quantitative correlation between Schottky contact parameter variation with temperature and barrier height non-uniformity is proposed. A Schottky contact surface with double Schottky barrier is considered. The main model parameters are the lower barrier (ΦBn,l) and a p factor which quantitatively evaluates the barrier non-uniformity on the Schottky contact area. The model is validated on Ni/4H-SiC Schottky contacts, post metallization sintered at high temperatures. The measured IF-VF-T characteristics, selected so as not to be affected by interface states, were used for model correlation. An inhomogeneous double Schottky barrier (with both nickel silicide and Ni droplets at the interface) is formed by a rapid thermal annealing (RTA) at 750 °C. High values of the p parameter are obtained from samples annealed at this temperature, using the proposed model. A significant improvement in the electrical properties occurs following RTA at 800 °C. The expansion of the Ni2Si phase on the whole contact area is evinced by an X-Ray diffraction investigation. In this case, the p factor is much lower, attesting the uniformity of the contact. The model makes it possible to evaluate the real Schottky barrier, for a homogenous Schottky contact. Using data measured on samples annealed at 800 °C, a true barrier height of around 1.73 V has been obtained for Ni2Si/4H-SiC Schottky contacts.

  2. Evolution of patterned step structure on vicinal Si(111) surface during high temperature annealing

    NASA Astrophysics Data System (ADS)

    Kan, Hung-Chih; Kwon, Taesoon; Phaneuf, Raymond

    2007-03-01

    We present the results of numerical simulations of the evolution of patterned step structures on vicinal Si(111) surfaces during high temperature annealing, which presumably drives the surface far away from equilibrium. We use a mesoscopic model [1] to describe the motion of individual steps under the effects of sublimation, step stiffness (line tension), and step-step interaction. The qualitative consistency between our simulation and experiment [2] suggest that thermodynamic driving force, such as the step-stiffness and step-step interaction dominate the evolution of the step structure during high temperature annealing. [1] J. D. Weeks, D.-J. Lui, and H.-C. Jeong, in Dynamics of Crystal Surfaces and Interfaces, edited by P. M. Duxbury and T.J. Pence (Plenum Press, New York and London 1997), pp. 199-216 [2] T. Kwon, H-C. Kan, R. J. Phaneuf, Appl. Phys. Lett. 88, 071914 (2006) .

  3. Correlation Between Pre-annealing Temperature and {110}<001> Annealing Texture in C- and Al-Free Fe-3 Pct Si-0.1 Pct Mn-0.002 Pct S Electrical Steel

    NASA Astrophysics Data System (ADS)

    Oh, Eun Jee; Heo, Nam Hoe; Koo, Yang Mo

    2017-06-01

    In C- and Al-free electrical steel, the increase in primary grain size with increasing pre-annealing temperature causes the transition in annealing texture after final annealing from {110} + {100} to {110}. The strip pre-annealed at 1073 K (800 °C) shows a low magnetic induction B8(T) of 1.784 T after final annealing. The strip pre-annealed at 1223 K (950 °C) shows a sharp {110}<001> Goss texture, producing a high magnetic induction B8(T) of 1.914 T comparable to that of the conventional electrical steels.

  4. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    SciTech Connect

    Kashiwar, A.; Vennela, N. Phani; Kamath, S.L.; Khatirkar, R.K.

    2012-12-15

    In the present study, effect of solution annealing temperature (1050 Degree-Sign C and 1100 Degree-Sign C) and isothermal ageing (700 Degree-Sign C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel ({approx} 45% ferrite and {approx} 55% austenite) undergoes a series of metallurgical transformations during ageing-formation of secondary austenite ({gamma}{sub 2}) and precipitation of Cr and Mo rich intermetallic (chi-{chi} and sigma-{sigma}) phases. For solution annealing at 1050 Degree-Sign C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 Degree-Sign C. {chi} Phase precipitated after the precipitation of carbides-preferentially at the ferrite-ferrite and also at the ferrite-austenite boundaries. {sigma} Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 Degree-Sign C was found to be carbides {yields} {chi} {yields} {sigma}. On the contrary, for samples solution annealed at 1100 Degree-Sign C, the precipitation of {chi} phase was negligible. {chi} Phase precipitated before {sigma} phase, preferentially along the ferrite-ferrite grain boundaries and was later consumed in the {sigma} phase precipitation. The {sigma} phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite {gamma}{sub 2} and {sigma} phase in the ferrite and along the ferrite-austenite grain boundaries. An increase in the volume fraction of {gamma}{sub 2} and {sigma} phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights

  5. Annealing temperature effect on microstructure, magnetic and microwave properties of Fe-based amorphous alloy powders

    NASA Astrophysics Data System (ADS)

    He, Jinghua; Wang, Wei; Wang, Aimin; Guan, Jianguo

    2012-09-01

    Fe74Ni3Si13Cr6W4 amorphous alloy powders were annealed at different temperature (T) for 1.5 h to fabricate the corresponding amorphous and nanocrystalline powders. The influences of T on the crystalline structure, morphology, magnetic and microwave electromagnetic properties of the resultant samples were investigated via X-ray diffraction, scanning electron microscopy, vibrating sample magnetometer and vector network analyzer. The results show that the powder samples obtained at T of 650 °C or more are composed of lots of ultra-fine α-Fe(Si) grains embedded in an amorphous matrix. When T increases from 350 to 750 °C, the saturated magnetization and coercivity of the as-annealed powder samples both increase monotonously whereas the relative real permittivity shows a minimal value and the relative real permeability shows a maximal value at T of 650 °C. Thus the powder samples annealed at 650 °C show optimal reflection loss under -10 dB in the whole C-band. These results here suggest that the annealing heat treatment of Fe-based amorphous alloy is an effective approach to fabricate high performance microwave absorber with reasonable permittivity and large permeability simultaneously via adjusting T.

  6. Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Wei-Ying; Jin, Peng; Liu, Gui-Peng; Li, Wei; Liu, Bin; Liu, Xing-Fang; Wang, Zhan-Guo

    2014-08-01

    The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence (PL) with the excitation wavelength as short as ~ 177 nm. Annealing experiments were carried out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 °C to 1600 °C. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL—ON complex in the AlN material.

  7. On the Room-Temperature Annealing of Cryogenically-Rolled Copper (Preprint)

    DTIC Science & Technology

    2011-07-01

    Institute for Metals Superplasticity Problems, Russian Academy of Science, 39 Khalturin Str., Ufa , 450001, Russia 2 Department of Materials...a circle (i.e., the so-called grain reconstruction method [11]). For the deformed phase, the grain thickness was measured using the linear-intercept... method . 3. EBSD DATA-ANALYSIS PROCEDURES Room-temperature annealing of cryogenically rolled copper occurs relatively slowly. When the present

  8. Evolution of microstructure and grain boundary character distribution of a tin bronze annealed at different temperatures

    SciTech Connect

    Huang, Weijiu; Chai, Linjiang; Li, Zhijun; Yang, Xusheng; Guo, Ning; Song, Bo

    2016-04-15

    Specimens cut from a rolled tin bronze sheet were annealed at 400–800 °C for 1 h and evolution of their microstructures was then characterized in details by electron channeling contrast imaging and electron backscatter diffraction techniques. Particularly, statistics on special boundaries (SBs) with Σ ≤ 29 and network connectivity of random high angle boundaries (HABs) in the annealed specimens were examined to probe optimization potentials of grain boundary character distribution (GBCD) for this material. Results show that the deformed microstructure in the as-received material begins to be recrystallized when the annealing temperature increase to 500 °C and average grain sizes surge with further increasing temperatures. As a result of the recrystallization, a large number of annealing twins (with Σ3 misorientation) are produced, leading to remarkably increased fractions of SBs (f{sub SBs}). Thanks to preexisting dense low angle boundaries, the majority of SBs in the 500 °C specimen with only partial recrystallization are Σ3{sub ic} (incoherent) boundaries, which effectively disrupt connectivity of random HABs network. Although the f{sub SBs} can be further increased (up to 72.5%) in specimens with full recrystallization (at higher temperatures), the Σ3{sub ic} boundaries would be replaced to some extent by Σ3{sub c} (coherent) boundaries which do not contribute directly to optimizing the GBCD. This work should be able to provide clear suggestions on applying the concept of grain boundary engineering to tin bronze alloys. - Highlights: • The rolled tin bronze begins to be recrystallized as temperature increases to 500 °C. • A lot of SBs are produced after recrystallization and the highest f{sub SBs} is 72.5%. • Partially recrystallized specimen has the optimum GBCD due to more Σ3{sub ic} boundaries. • The Σ3{sub ic} boundaries are replaced by Σ3{sub c} boundaries after full recrystallization.

  9. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    SciTech Connect

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Guiseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.

  10. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    DOE PAGES

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; ...

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

  11. Effect of Ni diffusion annealing temperature on crucial characterization of Bi-2223 superconducting system

    SciTech Connect

    Sarıtekin, N. K. Kahraman, M. F. Bilge, H. Pakdil, M. Doğruer, M. Yıldırım, G. Oz, M.; Zalaoğlu, Y.

    2016-03-25

    In this current work, influence of diffusion annealing temperature (650-850°C) on the electrical, superconducting and structural characterizations of pure and Ni diffused Bi-2223 materials produced by conventional solid-state reaction route is surveyed by dc electrical resistivity (ρ-T), transport critical current density (J{sub c}) and powder X-ray diffraction (XRD) measurements. All the experimental findings indicate that the curial characteristics, being responsible for the novel and feasible applications, improve significantly with the enhancement of the diffusion annealing temperature up to the certain value of 700 °C after which they degrade dramatically, meaning that the properties initially get better and better as a consequence of the penetration of more and more Ni concentrations into the superconducting grains or over grain boundaries in the Bi-2223 crystal matrix. From the diffusion annealing temperature value of 700 °C onwards, the excess penetration of the Ni nanoparticles along with consecutively stacked layers in the Bi-2223 crystal structure is, however, unfavorable for the attractive and feasible applications due to new induced disorders, local structural distortions and artificial dislocations.

  12. Reliability implications of defects in high temperature annealed Si/SiO{sub 2}/Si structures

    SciTech Connect

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.

    1994-08-01

    High-temperature post-oxidation annealing of poly-Si/SiO{sub 2}/Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO{sub 2} interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO{sub 2} network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO{sub 2} and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO{sub 2}/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies.

  13. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    SciTech Connect

    Abdullah, M. A. R. Mamat, M. H. Ismail, A. S.; Malek, M. F.; Alrokayan, Salman A. H. Khan, Haseeb A.; Rusop, M.

    2016-07-06

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  14. Conversion of p to n-type reduced graphene oxide by laser annealing at room temperature and pressure

    NASA Astrophysics Data System (ADS)

    Bhaumik, Anagh; Narayan, Jagdish

    2017-03-01

    Physical properties of reduced graphene oxide (rGO) are strongly dependent on the ratio of sp2 to sp3 hybridized carbon atoms and the presence of different functional groups in its structural framework. This research for the very first time illustrates successful wafer scale integration of graphene-related materials by a pulsed laser deposition technique, and controlled conversion of p to n-type 2D rGO by pulsed laser annealing using a nanosecond ArF excimer laser. Reduced graphene oxide is grown onto c-sapphire by employing pulsed laser deposition in a laser MBE chamber and is intrinsically p-type in nature. Subsequent laser annealing converts p into n-type rGO. The XRD, SEM, and Raman spectroscopy indicate the presence of large-area rGO onto c-sapphire having Raman-active vibrational modes: D, G, and 2D. High-resolution SEM and AFM reveal the morphology due to interfacial instability and formation of n-type rGO. Temperature-dependent resistance data of rGO thin films follow the Efros-Shklovskii variable-range-hopping model in the low-temperature region and Arrhenius conduction in the high-temperature regime. The photoluminescence spectra also reveal less intense and broader blue fluorescence spectra, indicating the presence of miniature sized sp2 domains in the vicinity of π* electronic states, which favor the VRH transport phenomena. The XPS results reveal a reduction of the rGO network after laser annealing with the C/O ratio measuring as high as 23% after laser-assisted reduction. The p to n-type conversion is due to the reduction of the rGO framework which also decreases the ratio of the intensity of the D peak to that of the G peak as it is evident from the Raman spectra. This wafer scale integration of rGO with c-sapphire and p to n-type conversion employing a laser annealing technique at room temperature and pressure will be useful for large-area electronic devices and will open a new frontier for further extensive research in graphene

  15. Annealing temperature window for tunneling magnetoresistance and spin torque switching in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Meng, H.; Sbiaa, R.; Wang, C. C.; Lua, S. Y. H.; Akhtar, M. A. K.

    2011-11-01

    Annealing temperature (Ta) and free layer thickness dependencies of magnetic properties and spin-transfer torque switching were investigated in CoFeB-MgO based magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA). Annealing process was found to be critical to buildup PMA. As Ta increases, switching field of free layer and reference layer is enhanced first then drops, corresponding to the improvement and collapse of PMA in both layers. However, it should be noted that PMA of free layer and the tunneling magnetoresistive (TMR) are maximized at different Ta zones. Spin transfer torque study pointed out that switching current density (Jc) depends on the combined effects from PMA, spin polarization, and saturation magnetization, which all depend on Ta values. Thickness dependence study revealed that Jc relies on the competing results of the thickness and PMA. The lowest critical switching current density achieved is 2.1 MA/cm2, accompanied with a TMR around 52% at room temperature.

  16. Radiative Thermal Annealing/in Situ X-ray Diffraction Study of Methylammonium Lead Triiodide: Effect of Antisolvent, Humidity, Annealing Temperature Profile, and Film Substrates

    DOE PAGES

    Dou, Benjia; Pool, Vanessa L.; Toney, Michael F.; ...

    2017-07-06

    Organic–inorganic hybrid halide perovskites are one of the most promising emerging photovoltaic materials due to their high efficiency and potentially low processing cost. Here in this paper, we present a well-controlled, manufacturing relevant annealing method, radiative thermal annealing, for the methylammonium lead triiodide (MAPbI3) films formed by a solvent engineering process, with dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) as solvent and diethyl ether as the antisolvent. Radiative thermal annealing can produce high quality perovskite films, evidenced by high efficiency solar cell devices (~18% power conversion efficiency), in a shorter time than the widely used hot plate annealing. Using in situmore » X-ray diffraction during the radiative annealing, we show that the role of the antisolvent is not to form an important intermediate compound (a PbI2-MAI-DMSO complex) by washing of the main solvent (DMF), but to achieve a pinhole free, uniform film of MAPbI3 with minimal intermediate compound. Importantly, we show that having a PbI2-MAI-DMSO intermediate compound does not guarantee a high quality (pinhole free) perovskite film. We directly show that humidity induces MAPbI3 to decompose into PbI2 more rapidly and, as such, negatively impacts the reproducibility of the device performance. In conclusion, the study is extended to reveal the effect of annealing temperature profile and deposition substrate to demonstrate the complexity of perovskite processing parameters. This coupled experimental approach allows a better understanding of the effect of processing protocols, including antisolvent, humidity, and annealing profile, on MAPbI3 film quality and the resultant solar cell performance.« less

  17. Radiative Thermal Annealing/in Situ X-ray Diffraction Study of Methylammonium Lead Triiodide: Effect of Antisolvent, Humidity, Annealing Temperature Profile, and Film Substrates

    DOE PAGES

    Dou, Benjia; Pool, Vanessa L.; Toney, Michael F.; ...

    2017-07-06

    Organic-inorganic hybrid halide perovskites are one of the most promising emerging photovoltaic materials due to their high efficiency and potentially low processing cost. Here, we present a well-controlled, manufacturing relevant annealing method, radiative thermal annealing, for the methylammonium lead triiodide (MAPbI3) films formed by a solvent engineering process, with dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) as solvent and diethyl ether as the antisolvent. Radiative thermal annealing can produce high quality perovskite films, evidenced by high efficiency solar cell devices (~18% power conversion efficiency), in a shorter time than the widely used hot plate annealing. Using in situ X-ray diffraction duringmore » the radiative annealing, we show that the role of the antisolvent is not to form an important intermediate compound (a PbI2-MAI-DMSO complex) by washing of the main solvent (DMF), but to achieve a pinhole free, uniform film of MAPbI3 with minimal intermediate compound. Importantly, we show that having a PbI2-MAI-DMSO intermediate compound does not guarantee a high quality (pinhole free) perovskite film. We directly show that humidity induces MAPbI3 to decompose into PbI2 more rapidly and, as such, negatively impacts the reproducibility of the device performance. The study is extended to reveal the effect of annealing temperature profile and deposition substrate to demonstrate the complexity of perovskite processing parameters. This coupled experimental approach allows a better understanding of the effect of processing protocols, including antisolvent, humidity, and annealing profile, on MAPbI3 film quality and the resultant solar cell performance.« less

  18. Shape-Dependent Magnetic Properties and Phase Transformation of Annealed Iron Oxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Naghdi, Samira; Rhee, Kyong Yop; Park, Soo Jin

    2017-08-01

    After investigation of different methods to synthesize magnetic nanoparticles (MNPs), finding methods to control their magnetic properties and to optimize their characteristics remains challenging. Heat treatment has been introduced as a perfect method that can affect the shape and size of MNPs and thus their magnetic properties. In this work, iron oxide (Fe2O3) nanoparticles with various shapes were produced by means of a microwave-assisted method, with use of cost-effective and non-toxic chemicals. These particles were then annealed at different temperatures, i.e., 300°C, 500°C, and 800°C, for 2 h in the presence of air. The results indicated that heated samples exhibited weaker magnetic properties than those of non-heated samples. Both x-ray diffraction and Raman analysis results of the annealed samples indicated that the Fe2O3 particles were well crystalline, with transformation in phases. Transmission electron microscopy images indicated that all the annealed particles were spherical, regardless of their initial shapes.

  19. The role of annealing temperature on the structural and magnetic consequences of Ta/PrFeB/Ta thin films processed by rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Ghasemi, Ali

    2016-04-01

    Ta/PrFeB/Ta thin films were deposited on CORNING 7059 by sputtering technique followed by rapid thermal annealing (RTA). The thickness of PrFeB was kept constant at 50 nm. The role of annealing temperature from 450 to 700 °C in a step of 50 °C for constant heating time of 60 s on the structural and magnetic consequences of thin films was studied by means of X-ray diffraction, field emission scanning electron microscopy, atomic force microscopy and vibrating sample magnetometer. The (00l) texture was almost fully developed at temperature of 650 °C and with an increase in temperature up to 700 °C the (105) peaks was also appeared in the patterns. The grains size and surface roughness of PrFeB films were increased by an increase in temperature. It was found that with an increase in temperature up to 500 °C the coercivity was developed and enhanced to 0.75 MA/m by further increasing of temperature to 650 °C. The maximum remanent-magnetization ratio and coercivity were obtained at temperature of 650 °C. The magnetization reversal process is accompanied by the combination of domain wall motion (DWM) and Stoner-Wohlfarth (S-W) rotation. However, for PrFeB films annealed at 550-700 °C it is closer to the S-W model than DWM modes.

  20. Effect of Annealing Temperature on the Water Contact Angle of PVD Hard Coatings

    PubMed Central

    Yang, Yu-Sen; Cho, Ting-Pin

    2013-01-01

    Various PVD (physical vapor deposition) hard coatings including nitrides and metal-doped diamond-like carbons (Me-DLC) were applied in plastic injection and die-casting molds to improve wear resistance and reduce sticking. In this study, nitrides hcp-AlN (hexagonal close-packed AlN), Cr2N, (CrAl)2N) and Me-DLC (Si-DLC and Cr-DLC) coatings were prepared using a closed field unbalanced magnetron reactive sputtering system. The coatings were annealed in air for 2 h at various temperatures, after which the anti-sticking properties were assessed using water contact angle (WCA) measurements. The as-deposited hcp-AlN, Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior and exhibit respective WCAs of 119°, 106° and 101°. The as-deposited Si-DLC and Cr-DLC coatings exhibit hydrophilic behavior and exhibit respective WCAs of 74° and 88°. The annealed Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior with higher WCAs, while the annealed hcp-AlN, Si-DLC and Cr-DLC coatings are hydrophilic. The increased WCA of the annealed Cr2N and (CrAl)2N coatings is related to their crystal structure and increased roughness. The decreased WCA of the annealed hcp-AlN, Si-DLC and Cr-DLC coatings is related to their crystal structures and has little correlation with roughness. PMID:28811440

  1. Evolution of Self-Assembled Au NPs by Controlling Annealing Temperature and Dwelling Time on Sapphire (0001).

    PubMed

    Lee, Jihoon; Pandey, Puran; Sui, Mao; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar

    2015-12-01

    Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C.

  2. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

    NASA Astrophysics Data System (ADS)

    Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; K. Mustafa, M.

    2015-02-01

    The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ˜ 0.26× 1011 cm-2) and dome-shape morphologies with relatively high density ˜ 0.92 × 1011 cm-2, respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ˜ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO2 or GeOx and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. Project supported by Ibnu Sina Institute for Fundamental Science Study, Universiti Teknologi Malaysia

  3. Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for Silicon Surface Passivation.

    PubMed

    Balaji, Nagarajan; Park, Cheolmin; Chung, Sungyoun; Ju, Minkyu; Raja, Jayapal; Yi, Junsin

    2016-05-01

    High quality surface passivation has gained a significant importance in photovoltaic industry for reducing the surface recombination and hence fabricating low cost and high efficiency solar cells using thinner wafers. The formation of good-quality SiO2 films and SiO2/Si interfaces at low processing temperatures is a prerequisite for improving the conversion efficiency of industrial solar cells with better passivation. High-temperature annealing in inert ambient is promising to improve the SiO2/Si interface. However, annealing treatments could cause negative effects on SiO2/Si interfaces due to its chemical at high temperatures. Low temperature post oxidation annealing has been carried out to investigate the structural and interface properties of Si-SiO2 system. Quasi Steady State Photo Conductance measurements shows a promising effective carrier lifetime of 420 μs, surface recombination velocity of 22 cm/s and a low interface trap density (D(it)) of 4 x 10(11) states/cm2/eV after annealing. The fixed oxide charge density was reduced to 1 x 10(11)/cm2 due to the annealing at 500 degrees C. The FWHM and the Si-O peak wavenumber corresponding to the samples annealed at 500 degrees C reveals that the Si dangling bonds in the SiO2 films due to the oxygen defects was reduced by the low temperature post oxidation annealing.

  4. Effect of annealing temperature and time on microstructure and mechanical properties of high Cr ferritic casting steel

    NASA Astrophysics Data System (ADS)

    Suo, Z. Y.; Fu, L. M.; Zhang, R. N.; Wang, Y. J.; Shan, A. D.

    2017-09-01

    A new-type of high Cr ferrite cast steel was designed and investigated. Effects of annealing temperature and time on the microstructure and mechanical properties of the high Cr ferrite cast steel were studied. The results show that the microstructures of the as-cast and annealing steels are composed of ferrite and (Cr•Fe)23C6 carbide. The morphology of carbides is from long rod and the continuous network to crystal precipitation for the steels with increasing of annealing temperature and time. The impact toughness is slightly increased from 6 J/cm2 to 8 J/cm2 when the annealing temperature increases from 1180 ℃ to 1200 ℃. But the hardness is about HB 200 and no obvious differences between the as-cast and annealing steels. The most suitable annealing temperature and time are 1200 ℃ and 5 h, respectively. The wear resistance of the high Cr ferrite cast steel is increased and improved with annealing temperature and holding time at 260 ℃. The wear mechanism is changed from abrasion wear to abrasive and adhesive wear. The good wear-resistant of the high Cr ferrite cast steel is mainly attributed to the fine uniformly dispersed carbides.

  5. Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Nemoz, Maud; Dagher, Roy; Matta, Samuel; Michon, Adrien; Vennéguès, Philippe; Brault, Julien

    2017-03-01

    AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as confirmed by transmission electron microscopy (TEM) images, up to 75%. Moreover, it is found that annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process. In addition, the morphological properties of the films were determined by atomic force microscopy (AFM) and show that the annealing conditions have a strong impact on the surface morphology and roughness. Finally, an annealing at 1550 °C for 20 min appears as an ideal tradeoff to enhance the structural properties while preserving the initial AlN surface morphology.

  6. Effects of annealing on the polymorphic structure of starches from sweet potatoes (Ayamurasaki and Sunnyred cultivars) grown at various soil temperatures.

    PubMed

    Genkina, Natalia K; Wasserman, Lyubov A; Noda, Takahiro; Tester, Richard F; Yuryev, Vladimir P

    2004-04-28

    Starches extracted from the sweet potato cultivars Sunnyred and Ayamurasaki grown at 15 or 33 degrees C (soil temperature) were annealed in excess water (3 mg starch/mL water) for different times (1, 4, 8 or 10h) at the temperatures 2-3 degrees K below the onset melting temperature. The structures of annealed starches, as well as their gelatinisation (melting) properties, were studied using high-sensitivity differential scanning calorimetry (HSDSC). In excess water, the single endothermic peak shifted to higher temperatures, while the melting (gelatinisation) enthalpy changed only very slightly, if any. The elevation of gelatinisation temperature was associated with increasing order/thickness of the crystalline lamellae. The only DSC endotherm identified in 0.6 M KCl for Sunnyred starch grown at 33 degrees C was attributed to A-type polymorphic structure. The multiple endothermic forms observed by DSC performed in 0.6M KCl for annealed starches from both cultivars grown at 15 degrees C provided evidence of a complex C-type (A- plus B-type) polymorphic structure of crystalline lamellae. The A:B-ratio of two polymorphic forms increased upon annealing due to partial transformation of B- to A-polymorph, which was time dependent. Long heating periods facilitated the maximal transformation of B- to A-polymorph associated with limited A:B ratio.

  7. Room temperature observation of high spin polarization in post annealed Co2FeSi/MgO/n+-Si on insulator devices

    NASA Astrophysics Data System (ADS)

    Tiwari, Ajay; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tezuka, Nobuki; Saito, Yoshiaki

    2017-04-01

    The post annealing temperature dependence of room temperature spin signals in Co2FeSi/MgO/n+-Si on insulator fabricated on Si(2×1) surface was investigated. For the devices fabricated on the Si(2×1) surface, the large and reliable three- and four-terminals spin signals were obtained even at room temperature. The magnitude of three-terminal narrow Hanle signals has a peak around 325 °C with respect to post annealing temperature. The trend of increasing spin accumulation signal with decreasing bias voltage was observed for both as deposited and sample annealed at 325 °C in the bias voltage range 600–800 mV. The enhancement of three- and four-terminals non-local magnetoresistance (MR) for post annealed sample at 325 °C, indicates that the spin polarization increases due to the structural ordering of Heusler alloy Co2FeSi. As a result, we observed large spin injection efficiency into Si (P ∼ 41.7%) even at room temperature. These results will pave a way to the future Si spintronics devices such a spin-MOSFET.

  8. Size Dependence of Oxygen-Annealing Effects on Superconductivity of Fe1+yTe1-xSx

    NASA Astrophysics Data System (ADS)

    Yamazaki, Teruo; Sakurai, Tatsuya; Yaguchi, Hiroshi

    2016-11-01

    For the Fe-based superconductor Fe1+yTe1-xSx, superconductivity is induced by annealing treatment in oxygen atmosphere, whereas as-grown samples do not show superconductivity. We investigated the sample-size dependence of O2-annealing effects in Fe1.01Te0.91S0.09. The annealing conditions were fixed to 1 atm, 200 °C, and 2 h. We carried out magnetic susceptibility and specific heat measurements in order to evaluate the superconducting volume fraction. We found that Fe1+yTe1-xSx has an optimal size for the induction of bulk superconductivity by O2 annealing. Our results indicate that O2 annealing is probably effective near the surface of samples over a length of a few tens of micro meters.

  9. Effect of Annealing Temperature and Time on Microstructure and Mechanical Properties of Multilayered Steel Composite Sheets

    NASA Astrophysics Data System (ADS)

    Cao, R.; Yu, X.; Feng, Z.; Ojima, M.; Inoue, J.; Koseki, T.

    2016-12-01

    Multilayered composite steels consisting of alternating layers of martensitic phase and austenitic phase exhibit an excellent combination of strength and elongation compared with conventional advanced high-strength steels. The deformation processes underlying these properties are of considerable interest. In this article, microstructure, grain size, and phase are characterized by scanning electron microscopy (SEM) and electron backscattering diffraction. The hardness of each layer is analyzed by a microindentation hardness testing system. Finally, the deformation and failure processes in multilayered steel are investigated by in-situ SEM. The hardness results indicate that various hardening modes occur in the soft austenitic layer and the hard martensitic layer. In- situ SEM results combined with microstructure analysis and hardness results reveal that annealing temperature and annealing time have a significant impact on final microstructure, fracture behavior, strength, hardness, and ductility.

  10. Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing

    NASA Astrophysics Data System (ADS)

    Melikhov, Y.; Konstantynov, P.; Domagala, J.; Sadowski, J.; Chernyshova, M.; Wojciechowski, T.; Syryanyy, Y.; Demchenko, I. N.

    2016-05-01

    The redistribution of Mn atoms in Ga1-xMnxAs layer during medium-temperature annealing, 250-450 oC, by Mn K-edge X-ray absorption fine structure (XAFS) recorded at ALBA facility, was studied. For this purpose Ga1-xMnxAs thin layer with x=0.01 was grown on AlAs buffer layer deposited on GaAs(100) substrate by molecular beam epitaxy (MBE) followed by annealing. The examined layer was detached from the substrate using a “lift-off” procedure in order to eliminate elastic scattering in XAFS spectra. Fourier transform analysis of experimentally obtained EXAFS spectra allowed to propose a model which describes a redistribution/diffusion of Mn atoms in the host matrix. Theoretical XANES spectra, simulated using multiple scattering formalism (FEFF code) with the support of density functional theory (WIEN2k code), qualitatively describe the features observed in the experimental fine structure.

  11. Temperature dependence of basalt weathering

    NASA Astrophysics Data System (ADS)

    Li, Gaojun; Hartmann, Jens; Derry, Louis A.; West, A. Joshua; You, Chen-Feng; Long, Xiaoyong; Zhan, Tao; Li, Laifeng; Li, Gen; Qiu, Wenhong; Li, Tao; Liu, Lianwen; Chen, Yang; Ji, Junfeng; Zhao, Liang; Chen, Jun

    2016-06-01

    The homeostatic balance of Earth's long-term carbon cycle and the equable state of Earth's climate are maintained by negative feedbacks between the levels of atmospheric CO2 and the chemical weathering rate of silicate rocks. Though clearly demonstrated by well-controlled laboratory dissolution experiments, the temperature dependence of silicate weathering rates, hypothesized to play a central role in these weathering feedbacks, has been difficult to quantify clearly in natural settings at landscape scale. By compiling data from basaltic catchments worldwide and considering only inactive volcanic fields (IVFs), here we show that the rate of CO2 consumption associated with the weathering of basaltic rocks is strongly correlated with mean annual temperature (MAT) as predicted by chemical kinetics. Relations between temperature and CO2 consumption rate for active volcanic fields (AVFs) are complicated by other factors such as eruption age, hydrothermal activity, and hydrological complexities. On the basis of this updated data compilation we are not able to distinguish whether or not there is a significant runoff control on basalt weathering rates. Nonetheless, the simple temperature control as observed in this global dataset implies that basalt weathering could be an effective mechanism for Earth to modulate long-term carbon cycle perturbations.

  12. Sub-surface oxide features at the aluminum-sapphire interface after low temperature annealing

    NASA Astrophysics Data System (ADS)

    Dutta, Sreya

    This work focuses on the formation of sub-surface oxide features that form at the aluminum-sapphire interface during a low temperature heat-treatment. The features consist of two parts, stable alpha-alumina ridges on the substrate, and faceted pyramidal structures composed of thin, low-temperature oxide shells that are bounded by the ridges. It is surprising to observe the formation of thermodynamically stable alpha-alumina at a low temperature. The ridges are epitaxial with the (0001) sapphire substrate and the overlying metal. The pyramidal features resemble closely the Wulff shape in aluminum. Experiments show that these features are underlying the annealing hillocks. This work is a detailed study of such oxide interfacial features associated with hollow hillocks. At the annealing temperatures (below the melting point of aluminum), the aluminum thin film is subjected to compressive stresses arising from the thermal expansion coefficient mismatch and this is aided by dewetting at the aluminum-sapphire interface. Creep cavitation and grain boundary sliding are postulated to help in the cavity formation. Annealing holes are also observed in the thin films. Two different types of holes are seen: dendritic branched holes and hexagonal faceted holes (drums). At lower temperature and thickness, dendritic holes are seen to be formed at the grain boundaries. The drums form within the grains at higher temperatures and in thicker films. The drums have a surface oxide layer suspended on the top. It is postulated that clustering of vacancies due to the presence of irregularities, defects, and dislocations at the interface as well as dewetting causes the nucleation of the drums at the interface. Numerous hillock-hole couples were seen. Thinning of the metal in areas near the hillocks could possibly aid in the hole formation process. It is speculated that the hole growth occurred during the cooling stage when the film was subjected to tensile stresses. Another interesting

  13. Effect of Systematic Control of Pd Thickness and Annealing Temperature on the Fabrication and Evolution of Palladium Nanostructures on Si (111) via the Solid State Dewetting

    NASA Astrophysics Data System (ADS)

    Kunwar, Sundar; Pandey, Puran; Sui, Mao; Zhang, Quanzhen; Li, Ming-Yu; Lee, Jihoon

    2017-05-01

    Si-based optoelectronic devices embedded with metallic nanoparticles (NPs) have demonstrated the NP shape, size, spacing, and crystallinity dependent on light absorption and emission induced by the localized surface plasmon resonance. In this work, we demonstrate various sizes and configurations of palladium (Pd) nanostructures on Si (111) by the systematic thermal annealing with the variation of Pd thickness and annealing temperature. The evolution of Pd nanostructures are systematically controlled by the dewetting of thin film by means of the surface diffusion in conjunction with the surface and interface energy minimization and Volmer-Weber growth model. Depending on the control of deposition amount ranging between 0.5 and 100 nm at various annealing temperatures, four distinctive regimes of Pd nanostructures are demonstrated: (i) small pits and grain formation, (ii) nucleation and growth of NPs, (iii) lateral evolution of NPs, and (iv) merged nanostructures. In addition, by the control of annealing between 300 and 800 °C, the Pd nanostructures show the evolution of small pits and grains, isolated NPs, and finally, Pd NP-assisted nanohole formation along with the Si decomposition and Pd-Si inter-diffusion. The Raman analysis showed the discrepancies on phonon modes of Si (111) such that the decreased peak intensity with left shift after the fabrication of Pd nanostructures. Furthermore, the UV-VIS-NIR reflectance spectra revealed the existence of surface morphology dependent on absorption, scattering, and reflectance properties.

  14. Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO{sub 2} thin films by sol-gel method

    SciTech Connect

    Muaz, A. K. M.; Hashim, U. Arshad, M. K. Md.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Liu, Wei-Wen; Foo, K. L.

    2016-07-06

    In this paper, the sol-gel method is used to prepare nanoparticles titanium dioxide (TiO{sub 2}) thin films at different annealing temperature. The prepared sol was deposited on the p-SiO{sub 2} substrates by spin coating technique under room temperature. The nanoparticles TiO{sub 2} solution was synthesized using Ti{OCH(CH_3)_2}{sub 4} as a precursor with an methanol solution at a molar ratio 1:10. The prepared TiO{sub 2} sols will further validate through structural, morphological and electrical properties. From the X-ray diffraction (XRD) analysis, as-deposited films was found to be amorphous in nature and tend to transform into tetragonal anatase and rutile phase as the films annealed at 573 and 773 K, respectively. The diversification of the surface roughness was characterized by atomic force microscopy (AFM) indicated the roughness and thickness very dependent on the annealing temperature. The two-point probe electrical resistance and conductance of nanoparticles TiO{sub 2} thin films were determined by the DC current-voltage (IV) analysis. From the I-V measurement, the electrical conductance increased as the films annealed at higher temperature.

  15. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

    PubMed Central

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-01-01

    The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

  16. Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO2 thin films by sol-gel method

    NASA Astrophysics Data System (ADS)

    Muaz, A. K. M.; Hashim, U.; Arshad, M. K. Md.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Liu, Wei-Wen; Foo, K. L.

    2016-07-01

    In this paper, the sol-gel method is used to prepare nanoparticles titanium dioxide (TiO2) thin films at different annealing temperature. The prepared sol was deposited on the p-SiO2 substrates by spin coating technique under room temperature. The nanoparticles TiO2 solution was synthesized using Ti{OCH(CH3)2}4 as a precursor with an methanol solution at a molar ratio 1:10. The prepared TiO2 sols will further validate through structural, morphological and electrical properties. From the X-ray diffraction (XRD) analysis, as-deposited films was found to be amorphous in nature and tend to transform into tetragonal anatase and rutile phase as the films annealed at 573 and 773 K, respectively. The diversification of the surface roughness was characterized by atomic force microscopy (AFM) indicated the roughness and thickness very dependent on the annealing temperature. The two-point probe electrical resistance and conductance of nanoparticles TiO2 thin films were determined by the DC current-voltage (IV) analysis. From the I-V measurement, the electrical conductance increased as the films annealed at higher temperature.

  17. Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

    PubMed

    Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

    2012-12-01

    Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications.

  18. Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon

    SciTech Connect

    Huang, J.; Fan, D.; Jaccodine, R.J.

    1988-06-01

    Low-temperature annealing (525 /sup 0/C--800 /sup 0/C) of 50-keV, 1 x 10/sup 15/-cm/sup -2/, boron-implanted silicon was studied with the emphasis on the mechanisms responsible for the reverse annealing as well as the enhanced diffusion of the implanted boron. The electrical properties of boron-implanted silicon were analyzed with Hall measurement. Boron depth profiles were also measured using secondary-ion mass spectrometry. These results were then correlated with cross-section transmission electron microscopy studies and deep-level transient spectroscopy studies. It is shown that reverse annealing is possibly due to boron-silicon interstitial complexes, rather than the formation of the commonly observed rodlike defects or precipitates. On the other hand, the enhanced tail diffusion of boron is found to be most likely associated with self-interstitials. Consequently, vacancy trapping of the silicon interstitial component may account for both the charge carrier recovery and the ending of the enhanced tail diffusion of implanted boron.

  19. Production of Native Donors in ZnO by Annealing at High Temperature in Zn Vapor

    SciTech Connect

    Halliburton, L. E.; Giles, N. C.; Garces, N. Y.; Luo, Ming; Xu, Chunchuan; Bai, Lihai; Boatner, Lynn A

    2005-01-01

    Zinc oxide crystals grown by the seeded chemical vapor transport method have been annealed in zinc vapor at 1100 {sup o}C for 30 min. These thermochemical reduction treatments produce a deep red coloration in the crystals and increase their n-type electrical conductivity. Electron paramagnetic resonance (EPR), optical absorption, and Hall measurements were used to monitor changes in the crystals. After an anneal, an intense optical absorption band is present that extends from the band edge out to approximately 550 nm, and the EPR signal near g = 1.96 (due to shallow donors and/or conduction-band electrons), the free-carrier absorption, and the Hall electron concentration are all larger. Hydrogen was not present during these anneals, thus leaving oxygen vacancies and zinc interstitials as candidates for the added donors. Neutral oxygen vacancies are produced at high temperature by the additive-coloration mechanism, and are responsible for the broad near-edge absorption band. The observed increase in the number of free carriers is a result of either (1) the formation of zinc interstitials or (2) having the ground state of the neutral oxygen vacancy near the conduction band.

  20. Crystallization, metastable phases, and demixing in a hafnia-titania nanolaminate annealed at high temperature

    SciTech Connect

    Cisneros-Morales, Massiel Cristina; Rubin Aita, Carolyn

    2010-09-15

    Nanolaminate films with a nominal 5 nm HfO{sub 2}-4 nm TiO{sub 2} bilayer architecture are sputter deposited on unheated fused silica and Au-coated glass substrates. Films on fused silica are postdeposition annealed from 573 to 1273 K and characterized by x-ray diffraction, scanning electron microscopy, Raman microscopy, and UV-visible-near IR spectrophotometry. The films show weak but progressive crystallization into orthorhombic (o) HfTiO{sub 4} when annealed up to 973 K. o-HfTiO{sub 4} is expected to form under bulk thermodynamic equilibrium conditions in the case of complete mixing of the bilayer components. Annealing above 973 K produces a crystallization sequence that is not predicted by bulk thermodynamics, ultimately involving o-HfTiO{sub 4} demixing to form monoclinic HfO{sub 2} doped with Ti and rutile TiO{sub 2} doped with Hf. These phases have a higher atomic density than o-HfTiO{sub 4} and segregate into discrete mesoscopic features. The authors propose that o-HfTiO{sub 4} demixing into higher density phases is a mechanism for thermal stress relief at high temperature. Demixing results in a major loss of optical transparency in the visible and ultraviolet spectral regions.

  1. Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

    SciTech Connect

    Pastor, A. A.; Prokhorova, U. V.; Serdobintsev, P. Yu.; Chaldyshev, V. V. Yagovkina, M. A.

    2013-08-15

    GaAs samples grown by molecular-beam epitaxy at low (230 Degree-Sign C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600 Degree-Sign C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 {+-} 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly As{sub Ga} antisite defects. According to X-ray diffraction and steady-state optical absorption data, the As{sub Ga} concentration in the samples is 3 Multiplication-Sign 10{sup 19} cm{sup -3}, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600 Degree-Sign C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 {+-} 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions.

  2. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    NASA Technical Reports Server (NTRS)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  3. Influence of annealing temperature on the structural, optical and electrical properties of amorphous Zinc Sulfide thin films

    NASA Astrophysics Data System (ADS)

    Göde, F.; Güneri, E.; Kariper, A.; Ulutaş, C.; Kirmizigül, F.; Gümüş, C.

    2011-11-01

    Zinc sulfide films have been deposited on glass substrates at room temperature by the chemical bath deposition technique. The growth mechanism is studied using X-ray diffraction, scanning electron microscopy, optical absorption spectra and electrical measurements. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (100, 200, 300 400 and 500 °C) for 1 h. The annealed film was also characterized by structural, optical and electrical studies. The structural analyses revealed that the as-deposited film was amorphous, but after being annealed at 500 °C, it changed to polycrystalline. The optical band gap is direct with a value of 4.01 eV, but this value decreased to 3.74 eV with annealing temperature, except for the 500 °C anneal where it only decreased to 3.82 eV. The refractive index (n), extinction coefficient (k), and real (ɛ1) and imaginary (ɛ2) parts of the dielectric constant are evaluated. Raman peaks appearing at ~478 cm-1, ~546 cm-1, ~778 cm-1 and ~1082 cm-1 for the annealed film (500 °C) were attributed to [TOl+LAΣ, 2TOΓ, 2LO, 3LO phonons of ZnS. The electrical conductivities of both as-deposited and annealed films have been calculated to be of the order of ~10-10 (Ω cm)-1 .

  4. Extrinsic origin of room-temperature ferromagnetism in Co-doped ZnO annealed in Zn vapor

    NASA Astrophysics Data System (ADS)

    Yan, Guoqing; Xuan, Haicheng

    2011-08-01

    Co-doped ZnO and CoO were prepared at 950 °C by the solid-state reaction method, then were annealed in N2 flow at 950 °C, and finally annealed in Zn vapor at 600 °C or 800 °C. The samples before annealing in Zn vapor have no ferromagnetism, but after annealing in Zn vapor, Co-doped ZnO and CoO both exhibit room-temperature ferromagnetism. Through x-ray diffraction and element composition measurements, it was found that the ferromagnetism of Co-doped ZnO annealed in Zn vapor is extrinsic and comes from cubic Co5Zn21 and/or cubic CoZn.

  5. Conversion of basal plane dislocations to threading edge dislocations in 4H-SiC epilayers by high temperature annealing

    NASA Astrophysics Data System (ADS)

    Zhang, Xuan; Tsuchida, Hidekazu

    2012-06-01

    Conversion of basal plane dislocations (BPDs) to threading edge dislocations (TEDs) is found in 4H-SiC epilayers after being annealed simply at high temperatures. Grazing incidence reflection synchrotron x-ray topography for the dislocations in the epilayers before and after annealing confirmed that some of the BPDs in the epilayers had converted to TEDs from the epilayer surface by the annealing. Observations on the dislocation behavior during annealing are explained in detail, and the mechanism of BPD conversion is discussed. It is argued that the conversion proceeds through the cross slip of constricted BPD segments towards the surface on the prismatic plane driven by the image force as well as TED glide driven by the line tension. Certain kinetic processes during annealing may facilitate the formation of constriction.

  6. Effect of annealing temperature on the morphology and optical properties of PMMA films by spin-coating method

    SciTech Connect

    Aadila, A. Afaah, A. N.; Asib, N. A. M.; Mohamed, R.; Rusop, M.; Khusaimi, Z.

    2016-07-06

    Poly(methyl methacrylate) (PMMA) films were deposited on glass substrate by sol-gel spin-coating method. The films were annealed for 10 minutes in furnace at different annealing temperature of room temperature, 50, 100, 150 and 200 °C. The effect of annealing temperatures to the surface and optical properties of PMMA films spin-coated on the substrate were investigated by Atomic Force Microscope (AFM) and Ultraviolet-Visible (UV-Vis) Spectroscopy. It was observed in AFM analysis all the annealed films show excellent smooth surface with zero roughness. All the samples demonstrate a high transmittance of 80% in UV region as shown in UV-Vis measurement. Highly transparent films indicate the films are good optical properties and could be applied in various optical applications and also in non-linear optics.

  7. Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

    SciTech Connect

    Dai, Chong-Chong; Zhou, Tian-Yu; Liu, Xue-Chao Zhuo, Shi-Yi; Kong, Hai-Kuan; Yang, Jian-Hua; Shi, Er-Wei

    2014-04-15

    A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10{sup -5} Ω·cm{sup 2} was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni{sub 3}Si to Ni{sub 2}Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

  8. Photoelectrochemical conversion in a WO{sub 3} coated p-Si photoelectrode: Effect of annealing temperature

    SciTech Connect

    Yoon, K.H.; Shin, C.W.; Kang, D.H.

    1997-05-01

    The photoelectrochemical properties of a p-type silicon (100) electrode coated with tungsten oxide thin film were investigated as a function of annealing temperature. The variation in the annealing temperature affected the photocurrent of a WO{sub 3}/p-Si electrode. A maximum photocurrent was obtained when the 500 {Angstrom} WO{sub 3} thin film coated p-Si electrode was annealed at 350{degree}C for 1 h. A further increase in the annealing temperature and film thickness degraded the photocurrent. This can be explained in terms of electrical resistivity, carrier concentration, and depletion layer width. A WO{sub 3} thin film deposition on the p-Si shifted the flatband potential of the p-Si electrode by 0.3 V in the anodic direction, resulting in an improvement in conversion efficiency. These results are supported by x-ray diffraction, Auger electron spectroscopy, and capacitance measurements. {copyright} {ital 1997 American Institute of Physics.}

  9. Excitation intensity dependent photoluminescence of annealed two-dimensional MoS2 grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kaplan, D.; Mills, K.; Lee, J.; Torrel, S.; Swaminathan, V.

    2016-06-01

    Here, we present detailed results of Raman and photoluminescence (PL) characterization of monolayers of MoS2 grown by chemical vapor deposition (CVD) on SiO2/Si substrates after thermal annealing at 150 °C, 200 °C, and 250 °C in an argon atmosphere. In comparison to the as-grown monolayers, annealing in the temperature range of 150-250 °C brings about significant changes in the band edge luminescence. It is observed that annealing at 150 °C gives rise to a 100-fold increase in the PL intensity and produces a strong band at 1.852 eV attributed to a free-to-bound transition that dominates over the band edge excitonic luminescence. This band disappears for the higher annealing temperatures. The improvement in PL after the 200 °C anneal is reduced in comparison to that obtained after the 150 °C anneal; this is suggested to arise from a decrease in the non-radiative lifetime caused by the creation of sulfur di-vacancies. Annealing at 250 °C degrades the PL in comparison to the as-grown sample because of the onset of disorder/decomposition of the sample. It is clear that the PL features of the CVD-grown MoS2 monolayer are profoundly affected by thermal annealing in Ar atmosphere. However, further detailed studies are needed to identify, unambiguously, the role of native defects and/or adsorbed species in defining the radiative channels in annealed samples so that the beneficial effect of improvement in the optical efficiency of the MoS2 monolayers can be leveraged for various device applications.

  10. Excitation intensity dependent photoluminescence of annealed two-dimensional MoS{sub 2} grown by chemical vapor deposition

    SciTech Connect

    Kaplan, D.; Swaminathan, V.; Mills, K.; Lee, J.; Torrel, S.

    2016-06-07

    Here, we present detailed results of Raman and photoluminescence (PL) characterization of monolayers of MoS{sub 2} grown by chemical vapor deposition (CVD) on SiO{sub 2}/Si substrates after thermal annealing at 150 °C, 200 °C, and 250 °C in an argon atmosphere. In comparison to the as-grown monolayers, annealing in the temperature range of 150–250 °C brings about significant changes in the band edge luminescence. It is observed that annealing at 150 °C gives rise to a 100-fold increase in the PL intensity and produces a strong band at 1.852 eV attributed to a free-to-bound transition that dominates over the band edge excitonic luminescence. This band disappears for the higher annealing temperatures. The improvement in PL after the 200 °C anneal is reduced in comparison to that obtained after the 150 °C anneal; this is suggested to arise from a decrease in the non-radiative lifetime caused by the creation of sulfur di-vacancies. Annealing at 250 °C degrades the PL in comparison to the as-grown sample because of the onset of disorder/decomposition of the sample. It is clear that the PL features of the CVD-grown MoS{sub 2} monolayer are profoundly affected by thermal annealing in Ar atmosphere. However, further detailed studies are needed to identify, unambiguously, the role of native defects and/or adsorbed species in defining the radiative channels in annealed samples so that the beneficial effect of improvement in the optical efficiency of the MoS{sub 2} monolayers can be leveraged for various device applications.

  11. High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC

    NASA Astrophysics Data System (ADS)

    Liu, Yu-Zhu; Li, Bing-Sheng; Zhang, Li

    2017-05-01

    Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The < 0001> -oriented 6H-SiC wafers are implanted with 15 keV helium ions at a dose of 1 × 10 17 cm -2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473 K for 30 min. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy (XTEM) analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273 K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealing abides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914+0.236 eV. Supported by the National Natural Science Foundation of China under Grant No 11475229.

  12. Effect of annealing temperature on AIN thin films prepared by D.C. magnetism filter arc deposition

    NASA Astrophysics Data System (ADS)

    Liang, Haifeng; Liu, Yan; Cai, Changlong

    2007-12-01

    Aluminum nitride (AlN) thin films have attracted much attention because of its more excellent properties and are widely applied to different fields. In our work, AlN thin films were grown on silicon substrate bying using D.C. magnetism filter arc deposition. Various annealing temperature of 573K, 773K, 973K, 1173K were used to process AlN thin films. Microscopy, ellpsometry and XRD were carried out to character films' properties. The results show that the films' refractive index and the extinction coefficient, processed in different annealing temperature, presented small float and were all less than 5 X 10-3, respectively. Furthermore, from microscopy graph, we can see that the film, annealed in 573-973K temperature, were all un-cracked, uniformity and denser. However, the films show cracking when the annealing temperature reaches 1173K°C. In addition, the XRD spectrum of AlN films show 002 preferred orientation with 973K annealing temperature and show abroad band peaks without annealing.

  13. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  14. Sample temperature profile during the excimer laser annealing of silicon nanoparticles

    NASA Astrophysics Data System (ADS)

    Caninenberg, M.; Verheyen, E.; Kiesler, D.; Stoib, B.; Brandt, M. S.; Benson, N.; Schmechel, R.

    2015-11-01

    Based on the heat diffusion equation we describe the temperature profile of a silicon nanoparticle thin film on silicon during excimer laser annealing using COMSOL Multiphysics. For this purpose system specific material parameters are determined such as the silicon nanoparticle melting point at 1683 K, the surface reflectivity at 248 nm of 20% and the nanoparticle thermal conductivity between 0.3 and 1.2 W/m K. To validate our model, the simulation results are compared to experimental data obtained by Raman spectroscopy, SEM microscopy and electrochemical capacitance-voltage measurements (ECV). The experimental data are in good agreement with our theoretical findings and support the validity of the model.

  15. Damage formation and annealing at low temperatures in ion implanted ZnO

    SciTech Connect

    Lorenz, K.; Alves, E.; Wendler, E.; Bilani, O.; Wesch, W.; Hayes, M.

    2005-11-07

    N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range. The Rutherford backscattering technique in the channeling mode was used to study in situ the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase of the damage for low implantation fluences, an upper limit of the Zn displacement energy of 65 eV could be estimated for [0001] oriented ZnO. Annealing measurements below room temperature show a significant recovery of the lattice starting at temperatures between 80 and 130 K for a sample implanted with low Er fluence. Samples with higher damage levels do not reveal any damage recovery up to room temperature, pointing to the formation of stable defect complexes.

  16. Damage annealing in low temperature Fe/Mn implanted ZnO

    NASA Astrophysics Data System (ADS)

    Gunnlaugsson, H. P.; Bharuth-Ram, K.; Johnston, K.; Langouche, G.; Mantovan, R.; Mølholt, T. E.; Naidoo, D.; Ólafsson, O.; Weyer, G.

    2015-04-01

    57Fe Emission Mössbauer spectra obtained after low fluence (<1012 cm -2) implantation of 57Mn ( T 1/2= 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe 2+ and Fe 3+ on Zn sites, interstitial Fe and Fe in damage regions (Fe D ). The Fe D component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (˜1015 cm -2)57Fe/ 57Co implanted ZnO and 57Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT.

  17. Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

    NASA Astrophysics Data System (ADS)

    Singh, Akhilesh Kumar; Hsu, Jen-Hwa; Perumal, Alagarsamy

    2016-11-01

    We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)]2/FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (TA=200, 300 and 400 °C). Structural analyzes reveal that the films annealed at TA≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at TA=300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M-H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), TA and temperature. A large reduction in coercivity (HC) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of HC(T), i.e., a broad minimum in HC(T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the HC(T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (TC) with TA (x). The multilayer films annealed at 200 °C exhibit low value of TC with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest TC with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and nature of interfaces.

  18. Energy based model for temperature dependent behavior of ferromagnetic materials

    NASA Astrophysics Data System (ADS)

    Sah, Sanjay; Atulasimha, Jayasimha

    2017-03-01

    An energy based model for temperature dependent anhysteretic magnetization curves of ferromagnetic materials is proposed and benchmarked against experimental data. This is based on the calculation of macroscopic magnetic properties by performing an energy weighted average over all possible orientations of the magnetization vector. Most prior approaches that employ this method are unable to independently account for the effect of both inhomogeneity and temperature in performing the averaging necessary to model experimental data. Here we propose a way to account for both effects simultaneously and benchmark the model against experimental data from 5 K to 300 K for two different materials in both annealed (fewer inhomogeneities) and deformed (more inhomogeneities) samples. This demonstrates that this framework is well suited to simulate temperature dependent experimental magnetic behavior.

  19. Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell

    PubMed Central

    Mahalingam, S.; Abdullah, H.; Shaari, S.; Muchtar, A.; Asshari, I.

    2015-01-01

    Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC. PMID:26146652

  20. Temperature Dependence of Optical Phonon Lifetimes,

    DTIC Science & Technology

    This reprint reports an application of a picosecond laser system to the measurement of the temperature dependence of the relaxation time of LO...Raman linewidths, and to the theoretically predicted temperature dependence of the relaxation time. (Author).

  1. Thermoluminescence properties of natural zoisite mineral under γ-irradiations and high temperature annealing

    NASA Astrophysics Data System (ADS)

    Ccallata, H. Javier; Filho, L. Tomaz; Watanabe, S.

    2011-04-01

    Natural silicate mineral of zoisite, Ca 2Al 3(SiO 4)(Si 2O 7)O(OH), has been investigated concerning γ-radiation, UV-radiation and high temperature annealing effects on thermoluminescence (TL). X-ray diffraction (XRD) measurement confirmed zoisite structure and X-ray fluorescence (XRF) analysis revealed besides Si, Al and Ca that are the main crystal components, other oxides of Fe, Mg, Cr, Na, K, Sr, Ti, Ba and Mn which are present in more than 0.05 wt%. The TL glow curve of natural sample contains (130-150), (340-370) and (435-475) °C peaks. Their shapes indicated a possibility that they are result of composition of two or more peaks strongly superposed, a fact confirmed by deconvolution method. Once pre-annealed at 600 °C for 1 h, the shape of the glow curves change and the zoisite acquires high sensitivity. Several peaks between 100 and 400 °C appear superposed, and the high temperature peak around 435 °C cannot be seen. The ultraviolet radiation, on the other hand, produces one TL peak around 130 °C and the second one around 200 °C and no more.

  2. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure.

    PubMed

    Seshan, V; Ullien, D; Castellanos-Gomez, A; Sachdeva, S; Murthy, D H K; Savenije, T J; Ahmad, H A; Nunney, T S; Janssens, S D; Haenen, K; Nesládek, M; van der Zant, H S J; Sudhölter, E J R; de Smet, L C P M

    2013-06-21

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ~50 ml∕min (STP) at ~850 °C. The films were extensively evaluated by surface wettability, electron affinity, elemental composition, photoconductivity, and redox studies. In addition, electrografting experiments were performed. The surface characteristics as well as the optoelectronic and redox properties of the annealed films were found to be very similar to hydrogen plasma-treated films. Moreover, the presented method is compatible with atmospheric pressure and provides a low-cost solution to hydrogenate CVD diamond, which makes it interesting for industrial applications. The plausible mechanism for the hydrogen termination of CVD diamond films is based on the formation of surface carbon dangling bonds and carbon-carbon unsaturated bonds at the applied tempera-ture, which react with molecular hydrogen to produce a hydrogen-terminated surface.

  3. Field emission behavior of carbon nanotube field emitters after high temperature thermal annealing

    SciTech Connect

    Sun, Yuning; Shin, Dong Hoon; Yun, Ki Nam; Leti, Guillaume; Hwang, Yeon Mo; Song, Yenan; Saito, Yahachi; Lee, Cheol Jin

    2014-07-15

    The carbon nanotube (CNT) field emitters have been fabricated by attaching a CNT film on a graphite rod using graphite adhesive material. The CNT field emitters showed much improved field emission properties due to increasing crystallinity and decreasing defects in CNTs after the high temperature thermal annealing at 900 °C in vacuum ambient. The CNT field emitters showed the low turn-on electric field of 1.15 V/μm, the low threshold electric field of 1.62 V/μm, and the high emission current of 5.9 mA which corresponds to a current density of 8.5 A/cm{sup 2}. In addition, the CNT field emitters indicated the enhanced field emission properties due to the multi-stage effect when the length of the graphite rod increases. The CNT field emitter showed good field emission stability after the high temperature thermal annealing. The CNT field emitter revealed a focused electron beam spot without any focusing electrodes and also showed good field emission repeatability.

  4. Temperature Dependence of Laser Induced Breakdown

    DTIC Science & Technology

    1994-01-01

    consistent dependence on the temperature of the medium. The theory of the temperature dependence of LIB and experimental observations for all pulse...durations and their implications for retinal damage are discussed. Laser Induced Breakdown, Temperature dependence , Threshold valve, Nanosecond, Picosecond, Femtosecond, laser pulses.

  5. Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

    NASA Astrophysics Data System (ADS)

    Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol; An, Tae Kyu; Nam, Sooji; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

    2017-08-01

    Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlOx) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlOx thin film at 180 °C was comparable to that of AlOx thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlOx thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10-7 A/cm2 at 2 MV/cm). Finally, we confirmed that a dense AlOx thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlOx thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m-2 day-1 (25 °C, 50% relative humidity) and 0.26 g m-2 day-1, respectively.

  6. Influence of annealing temperature on structural and optical properties of nanocrystalline Platinum octaethylporphyrin (PtOEP) thin films

    NASA Astrophysics Data System (ADS)

    Abuelwafa, A. A.; El-Denglawey, A.; Dongol, M.; El-Nahass, M. M.; Soga, T.

    2015-11-01

    Thermal evaporation technique was used to prepare the Platinum octaethylporphyrin (PtOEP) thin films at room temperature. The deposited films were studied before and after thermal annealing at 373 and 473 K for 3 h under vacuum (10-3 Pa). The film structure, surface morphologies and molecular structure were investigated as a function of annealing temperature by X-ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM) and Fourier-transform infrared techniques (FT-IR) respectively. The results confirmed that the as-deposited and annealed films have nanostructural features. Optical constants of the as-deposited and annealed films have been obtained in the wavelength range 200-1100 nm by using spectrophotometric measurements. Analysis of the spectra of absorption coefficient showed indirect allowed transition and optical energy gap found to decrease with increase in annealing temperature. The dispersion of refractive index at the normal dispersion (λ > 600 nm) was discussed in terms of single oscillator model of Wemple-Didomenico. Based on generalized Miller's rule the third order non-linear susceptibility, χ(3) and nonlinear refractive index, n2 were estimated and studied at lower photon energy and showing lower value for the annealed film.

  7. Effects of annealed temperature on the properties of TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Avesh

    2016-05-01

    In this work, the structural, morphological and electrical properties of TiO2 thin films are studied. The phase transformation of TiO2 from anatase to rutile is occurred at a certain temperature. This transformation increases defects concentration onthe surface of the film which acts as trapping sites for carriers, thereby affecting the Fermi level of TiO2 film.Quantitative estimation of Fermi level shifting is measured in terms of work function measurement using scanning Kelvin probe measurement. Work function of TiO2 was found to decrease with increasing annealed temperature indicating shifting of Fermi level towards conduction band. Position of Fermi level plays an important role in phase transformation and electronic properties of TiO2.

  8. Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates

    PubMed Central

    Chen, Tao-Hsing; Chen, Ting-You

    2015-01-01

    An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

  9. 2D nano-Y2O3:Eu3+ photoluminescence with different preparation methods and annealing temperatures

    NASA Astrophysics Data System (ADS)

    Zhou, Jun; Zhu, Yanhua; Liu, Huangqing; Chai, Yifeng; Yang, Yibo; Zhang, Qingjun; Wang, Lingling

    2017-03-01

    Y2O3:Eu3+ (YOE) material is an important photoluminescence (PL) material. In this paper, YOE nano-powder was prepared by the low-temperature combustion method (LTC) and sol-gel method (SG), and annealed with different temperatures, respectively. The influence of the preparation methods and annealing temperature on the optical properties of YOE were well studied. The as-synthesized nano-YOE samples were characterized by x-ray diffraction (XRD), PL spectra, and Fourier transform infrared spectroscopy (FTIR). Results show that with the increase in annealing temperature, the charge transfer band (CTB) of samples blue-shifts and shows higher intensity. FTIR results indicate that low emission intensity decreases luminescence intensity and deteriorates the optical properties of nano-YOE. We also studied the spectral intensity changes before and after laser-induced, which shows the intensity of significant changes over time.

  10. Effect of Annealing Temperature on the Mechanical and Corrosion Behavior of a Newly Developed Novel Lean Duplex Stainless Steel.

    PubMed

    Guo, Yanjun; Hu, Jincheng; Li, Jin; Jiang, Laizhu; Liu, Tianwei; Wu, Yanping

    2014-09-12

    The effect of annealing temperature (1000-1150 °C) on the microstructure evolution, mechanical properties, and pitting corrosion behavior of a newly developed novel lean duplex stainless steel with 20.53Cr-3.45Mn-2.08Ni-0.17N-0.31Mo was studied by means of optical metallographic microscopy (OMM), scanning electron microscopy (SEM), magnetic force microscopy (MFM), scanning Kelvin probe force microscopy (SKPFM), energy dispersive X-ray spectroscopy (EDS), uniaxial tensile tests (UTT), and potentiostatic critical pitting temperature (CPT). The results showed that tensile and yield strength, as well as the pitting corrosion resistance, could be degraded with annealing temperature increasing from 1000 up to 1150 °C. Meanwhile, the elongation at break reached the maximum of 52.7% after annealing at 1050 °C due to the effect of martensite transformation induced plasticity (TRIP). The localized pitting attack preferentially occurred at ferrite phase, indicating that the ferrite phase had inferior pitting corrosion resistance as compared to the austenite phase. With increasing annealing temperature, the pitting resistance equivalent number (PREN) of ferrite phase dropped, while that of the austenite phase rose. Additionally, it was found that ferrite possessed a lower Volta potential than austenite phase. Moreover, the Volta potential difference between ferrite and austenite increased with the annealing temperature, which was well consistent with the difference of PREN.

  11. Effect of Annealing Temperature on the Mechanical and Corrosion Behavior of a Newly Developed Novel Lean Duplex Stainless Steel

    PubMed Central

    Guo, Yanjun; Hu, Jincheng; Li, Jin; Jiang, Laizhu; Liu, Tianwei; Wu, Yanping

    2014-01-01

    The effect of annealing temperature (1000–1150 °C) on the microstructure evolution, mechanical properties, and pitting corrosion behavior of a newly developed novel lean duplex stainless steel with 20.53Cr-3.45Mn-2.08Ni-0.17N-0.31Mo was studied by means of optical metallographic microscopy (OMM), scanning electron microscopy (SEM), magnetic force microscopy (MFM), scanning Kelvin probe force microscopy (SKPFM), energy dispersive X-ray spectroscopy (EDS), uniaxial tensile tests (UTT), and potentiostatic critical pitting temperature (CPT). The results showed that tensile and yield strength, as well as the pitting corrosion resistance, could be degraded with annealing temperature increasing from 1000 up to 1150 °C. Meanwhile, the elongation at break reached the maximum of 52.7% after annealing at 1050 °C due to the effect of martensite transformation induced plasticity (TRIP). The localized pitting attack preferentially occurred at ferrite phase, indicating that the ferrite phase had inferior pitting corrosion resistance as compared to the austenite phase. With increasing annealing temperature, the pitting resistance equivalent number (PREN) of ferrite phase dropped, while that of the austenite phase rose. Additionally, it was found that ferrite possessed a lower Volta potential than austenite phase. Moreover, the Volta potential difference between ferrite and austenite increased with the annealing temperature, which was well consistent with the difference of PREN. PMID:28788201

  12. Effects of rolling temperature and subsequent annealing on mechanical properties of ultrafine-grained Cu–Zn–Si alloy

    SciTech Connect

    Zhang, Xiangkai; Yang, Xuyue; Chen, Wei; Qin, Jia; Fouse, Jiaping

    2015-08-15

    The effects of rolling temperature and subsequent annealing on mechanical properties of Cu–Zn–Si alloy were investigated by using X-ray diffraction, transmission electron microscope, electron back scattered diffraction and tensile tests. The Cu–Zn–Si alloy has been processed at cryogenic temperature (approximately 77 K) and room temperature up to different rolling strains. It has been identified that the cryorolled Cu–Zn–Si alloy samples show a higher strength compared with those room temperature rolled samples. The improved strength of cryorolled samples is resulted from grain size effect and higher densities of dislocations and deformation twins. And subsequent annealing, as a post-heat treatment, enhanced the ductility. An obvious increase in uniform elongation appears when the volume fraction of static recrystallization grains exceeds 25%. The strength–ductility combination of the annealed cryorolled samples is superior to that of annealed room temperature rolled samples, owing to the finer grains, high fractions of high angle grain boundaries and twins. - Highlights: • An increase in hardness of Cu–Zn–Si alloy is noticed during annealing process. • Thermal stability is reduced in Cu–Zn–Si alloy by cryorolling. • An obvious enhancement in UE is noticed when fraction of SRX grains exceeds 25%. • A superior strength–ductility combination is achieved in the cryorolling samples.

  13. The stress corrosion resistance and the cryogenic temperature mechanical properties of annealed Nitronic 60 bar material

    NASA Technical Reports Server (NTRS)

    Montano, J. W. L.

    1977-01-01

    Ambient and cryogenic temperature mechanical properties and the ambient temperature stress corrosion properties of annealed, straightened, and centerless ground Nitronic 60 stainless steel alloy bar material are presented. The mechanical properties of longitudinal specimens were evaluated at test temperatures from ambient to liquid hydrogen. The tensile test data indicated increasing strength with decreasing temperature to -196 C. Below liquid nitrogen temperature the smooth tensile and notched tensile strengths decreased slightly while the elongation and reduction of area decreased drastically. The Charpy V-notched impact energy decreased steadily with decreasing test temperature. Stress corrosion tests were performed on longitudinal tensile specimens and transverse C-ring specimens exposed to: alternate immersion in a 3.5% NaCl bath; humidity cabinet; and a 5% salt spray atmosphere. The longitudinal tensile specimens experienced no corrosive attack. Approximately 3/4 of the transverse C-rings exposed to alternate immersion and to salt spray experienced a pitting attack on the top and bottom ends. Additional stress corrosion tests were performed on transverse tensile specimens. No failures occurred in the 90% stressed specimens exposed for 90 days in the alternate immersion and salt spray environments

  14. Evolution of the interface structure of bonded Si wafers after high temperature annealing

    NASA Astrophysics Data System (ADS)

    Zakharov, N. D.; Pippel, E.; Werner, P.; Gösele, U.; Vdovin, V.; Milvidskii, M.; Ries, M.; Seacrist, M.; Falster, R.

    2010-02-01

    The evolution of the interfaces of bonded Si wafers and the corresponding low-angle twist boundary have been analysed in dependence on thermal annealing. Two orientation relations were investigated: i) Si(001)/SiO2/Si(001) and ii) Si(110)/SiO2/Si(001). The interfaces were analysed by TEM and STEM/EDX and EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si-Si bonded interface depend very much on the lattice mismatch and on the twist angle. A dissolution of the oxide and the formation of Si-Si boundaries occur much faster in the case of Si(110)/Si(001) bonding than in Si(001)/Si(001). The process of interface fusion and the dissolution of the oxide layer are discussed.

  15. Effect of Annealing Temperature on Microstructure and Mechanical Properties of Hot Swaged cp-Ti Produced by Investment Casting

    NASA Astrophysics Data System (ADS)

    Ibrahim, Khaled M.; Mhaede, Mansour; Wagner, Lothar

    2012-01-01

    The purpose of this study is to evaluate the influence of hot swaging (SW) and annealing treatment on microstructure and mechanical properties of commercially pure titanium (grade 4) produced by investment casting. During SW at 700 °C, the diameter of the cast titanium bars was reduced from 25 to 8.5 mm in 14 steps. After SW, material was annealed for 1 h at 500, 700, or 870 °C. The as-cast samples showed a typical microstructure consisting of a variety of α-morphologies, while the hot swaged samples exhibited a kinked lamellar microstructure. Annealing at 500 °C did not significantly change this microstructure, while annealing at both 700 and 870 °C led to recrystallization and formation of equiaxed microstructures. The cast bars exhibited a typical hard α-layer in near-surface regions with maximum depth and maximum hardness of 720 μm and 660 HV0.5, respectively. Due to SW, the tensile strength of the as-cast material drastically increased from 605 to 895 MPa. Annealing at 500 °C decreased this tensile strength slightly from 895 to 865 MPa while annealing at 700 °C led to a further pronounced drop in tensile strength from 865 to 710 MPa. No additional decrease in tensile strength was observed by increasing the annealing temperature from 700 to 870 °C. The tensile ductility of the as-cast and hot swaged samples was approximately the same in the range of 0.05 to 0.11, while the annealed samples showed values in the range of 0.25 to 0.53. In addition, the as-cast and hot swaged samples revealed a brittle cleavage fracture surfaces. However, the annealed samples showed a transgranular ductile fracture with formation of dimples.

  16. Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures

    NASA Astrophysics Data System (ADS)

    Kim, Min Hong; Choi, Hyung Wook; Kim, Kyung Hwan

    2013-11-01

    The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O2/(Ar+O2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 °C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 °C indicated amorphous properties, while those annealed above 400 °C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm2/C for thin film annealed at 200 °C. The WO3-x thin film annealed at 200 °C showed superior electrochromic properties.

  17. High-temperature annealing effects on multiwalled carbon nanotubes: electronic structure, field emission and magnetic behaviors.

    PubMed

    Ray, Sekhar Chandra; Pao, Chih-Wen; Tsai, Huang-Ming; Chen, Huang-Chin; Chen, Yu-Shin; Wu, Shang-Lun; Ling, Dah-Chin; Lin, I-Nan; Pong, Way-Faung; Gupta, Sanju; Giorcelli, Mauro; Bianco, Stefano; Musso, Simone; Tagliaferro, Alberto

    2009-12-01

    This work elucidates the effects of high-temperature annealing on the microscopic and electronic structure of multiwalled carbon nanotubes (MWCNTs) using high-resolution transmission electron microscopy, micro-Raman spectroscopy, X-ray diffraction, X-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VBPES), respectively. The field emission and magnetization behaviors are also presented. The results of annealing are as follows: (1) MWCNTs tend to align in the form of small fringes along their length, promote graphitization and be stable in air, (2) XANES indicates an enhancement in oxygen content on the sample, implying that it can be adopted for sensing and storing oxygen gas, (3) the electron field emission current density (J) is enhanced and the turn-on electric field (E(TOE)) reduced, suggesting potential use in field emission displays and as electron sources in microwave tube amplifiers and (4) as-grown MWCNTs with embedded iron nanoparticles exhibits significantly higher coercivity approximately 750 Oe than its bulk counterpart (Fe(bulk) approximately 0.9 Oe), suggesting its potential use as low-dimensional high-density magnetic recording media.

  18. Influence of annealing at temperatures above the solidus temperature on the structure and galvanomagnetic properties of Bi92Sb8 solid-solution thin films

    NASA Astrophysics Data System (ADS)

    Grabov, V. M.; Demidov, E. V.; Ivanova, E. K.; Komarov, V. A.; Kablukova, N. S.; Krushel'nitskii, A. N.; Staritsyn, M. V.

    2017-07-01

    The influence of the annealing temperature from the interval between the solidus and liquidus temperatures of Bi92Sb8 solid solution on its structure and galvanomagnetic and thermoelectric properties has been studied. It has been shown that films of bismuth-antimony solid solution grown by thermal evaporation in a vacuum will have a large-grained structure after annealing at temperatures higher than the solidus temperature of the solid solution. It has been found that these films offer the lowest resistivity, the highest relative magnetoresistance, and the highest mobility of charge carriers. As the annealing temperature approaches the liquidus temperature, the probability that a dendritic structure will form and antimony-enriched regions will appear grows. This causes an increase in the charge carrier concentration and a decrease in the resistivity with a decrease in the relative magnetoresistance and charge carrier mobility.

  19. High-temperature measurement with Brillouin optical time domain analysis of an annealed fused-silica single-mode fiber.

    PubMed

    Bao, Yi; Chen, Genda

    2016-07-15

    The effect of annealing is experimentally studied for a fused silica, fully distributed fiber optic sensor based on the pulse pre-pump Brillouin optical time domain analysis (PPP-BOTDA). Within a heating rate of 4.3°C/min and 30.6°C/min, and a sustained peak temperature for 120 and 240 min, annealing extended the sensor's upper operation temperature from 800°C to 1000°C and reduced the sensor's measurement variability over a temperature range of 22°C to 1000°C with a maximum Brillouin frequency variation of 1%. The annealed sensor had a linearly decreasing Brillouin frequency sensitivity from 1.349×10-3  GHz/°C at 22°C to 0.419×10-3  GHz/°C at 1000°C. The time required to achieve a stable annealing effect decayed exponentially with annealing temperature.

  20. Effect of annealing temperature on gelatinization of rice starch suspension as studied by rheological and thermal measurements.

    PubMed

    Tsutsui, Kazumi; Katsuta, Keiko; Matoba, Teruyoshi; Takemasa, Makoto; Nishinari, Katsuyoshi

    2005-11-16

    The effect of annealing temperature (Ta) on the rheological behavior of 10 wt % rice starch suspension was investigated by the dynamic viscoelasticity, the differential scanning calorimetry (DSC), and the amount of leached out amylose and the swelling ratio of starch suspension. The rheological behaviors of the annealed samples are classified into three types in terms of Ta: Ta1, 48 and 55 degrees C, which are much lower than the gelatinization temperature, Tgel (=62 degrees C); Ta2, 58, 60, and 62 degrees C, which are almost the same as Tgel; and Ta3, 65, 68, 70, and 73 degrees C, which are much higher than Tgel. For the samples annealed at Ta2, the onset temperature of the storage and the loss moduli, G' and G'', increased with increasing T(a), and G' and G" in the temperature range from 65 to 90 degrees C gradually increased though smaller than those for the nonannealed sample, the control. This can be understood by the partial gelatinization; i.e., the leached out amylose prevents further amylose from leaching out. The rheological property of the samples annealed at Ta1 is not so different from that of the control, and the samples annealed at Ta3 are almost gelatinized. The rheological behavior of starch suspension can be controlled by Ta.

  1. Microstructure evolution of a ZrC coating layer in TRISO particles during high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Kim, Daejong; Chun, Young Bum; Ko, Myeong Jin; Lee, Hyeon-Geun; Cho, Moon-Sung; Park, Ji Yeon; Kim, Weon-Ju

    2016-10-01

    The influence of high-temperature annealing on the microstructure of zirconium carbide (ZrC) was investigated in relation to its application as a coating layer of a nuclear fuel in a very high temperature gas cooled reactor. ZrC was deposited as a constituent coating layer of TRISO coated particles by a fluidized bed chemical vapor deposition method using a ZrCl4-CH4-Ar-H2 system. The grain growth of ZrC during high-temperature annealing was strongly influenced by the co-deposition of free carbon. Sub-stoichiometric ZrC coatings have experienced a significant grain growth during high-temperature annealing at 1800 °C and 1900 °C for 1 h. On the other hand, a dual phase of stoichiometric ZrC and free carbon experienced little grain growth. It was revealed that the free carbon of the as-deposited ZrC was primarily distributed within the ZrC grains but was redistributed to the grain boundaries after annealing. Consequently, carbon at the grain boundary retarded the grain growth of ZrC. Electron backscatter diffraction (EBSD) results showed that as-deposited ZrC had (001) a preferred orientation that kept its favored direction after significant grain growth during annealing. The hardness slightly decreased as the grain growth progressed.

  2. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

    PubMed Central

    2013-01-01

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C. PMID:23452508

  3. Detection of nitrogen dioxide down to ppb levels using flower-like tungsten oxide nanostructures under different annealing temperatures.

    PubMed

    Wang, Chong; Ding, Mengdi; Kou, Xueying; Guo, Lanlan; Feng, Changhao; Li, Xin; Zhang, Hong; Sun, Peng; Sun, Yanfeng; Lu, Geyu

    2016-12-01

    3D hierarchical flower-like WO3·0.33H2O nanostructures were synthesized via a facile solvothermal method without using any template or surfactant. After annealed at high temperature, the as-prepared WO3·0.33H2O would partly or fully transform into monoclinic WO3 with the morphology almost unchanged. Gas sensing properties of the sensor based on these flower-like nanostructures with the relationship of annealing temperature were also investigated systematically. The experiment results indicate the sensor shows highest response to NO2 when the annealing temperature is 500°C. At the same time, the detection limit can be as low as ∼5ppb level. Thus, the novel flower-like nanostructures might be a promising material for designing NO2 gas sensor with high performance. Copyright © 2016 Elsevier Inc. All rights reserved.

  4. Bladder and prostate cancer screening for human papillomavirus by polymerase chain reaction: conflicting results using different annealing temperatures.

    PubMed

    Sinclair, A L; Nouri, A M; Oliver, R T; Sexton, C; Dalgleish, A G

    1993-12-01

    Two sets of L1 ORF degenerative primers, GP5/6 and MYO9/11, have been used to screen for human papillomavirus (HPV) sequences in bladder tumours, cell lines and controls by polymerase chain reaction (PCR). None of the 14 bladder and prostate tumours or nine bladder cell lines contained HPV sequences when tested with L1 ORF primer pair GP5/6 at 40 degrees C annealing temperature. In contrast, use of the L1 ORF primer pair MY09/11 at this low annealing temperature consistently gave a 450 bp band, suggesting the presence of HPV. This occurred in all samples including the negative DNA controls. An increase in stringency to an annealing temperature of 55 degrees C resulted in an elimination of this band in the test and negative control samples. This finding may explain why there are contradictory reports in the literature, and further studies are in progress to clarify this issue.

  5. Change in the magnetic properties of nanoferrihydrite with an increase in the volume of nanoparticles during low-temperature annealing

    NASA Astrophysics Data System (ADS)

    Balaev, D. A.; Krasikov, A. A.; Stolyar, S. V.; Iskhakov, R. S.; Ladygina, V. P.; Yaroslavtsev, R. N.; Bayukov, O. A.; Vorotynov, A. M.; Volochaev, M. N.; Dubrovskiy, A. A.

    2016-09-01

    The results of the investigation into the effect of low-temperature annealing of a powder of nanoparticles of bacterial ferrihydrite on its magnetic properties have been presented. It has been found that an increase in the time (up to 240 h) and temperature (in the range from 150 to 200°C) of annealing leads to a monotonic increase in the superparamagnetic blocking temperature, the coercive force, and the threshold field of the opening of the magnetic hysteresis loop (at liquid-helium temperatures), as well as to an increase in the magnetic resonance line width at low temperatures and in the magnetic susceptibility at room temperature. At the same time, according to the results of the analysis of the Mössbauer spectra, the annealing of ferrihydrite does not lead to the formation of new iron oxide phases. Most of these features are well consistent with the fact that the low-temperature annealing of ferrihydrite causes an increase in the size of nanoparticles, which is confirmed by the results of transmission electron microscopy studies.

  6. The Viscosity-Temperature-Dependence of Liquids,

    DTIC Science & Technology

    The viscosity-temperature- dependence of liquids of different types can be represented by the formula lg kinematic viscosity = A/T to the x power + B...if A has a constant value, only one viscosity measurement at one temperature is necessary for the characterization of the viscosity-temperature- dependence . Examples for each different case are given. (Author)

  7. films crystallized on glass and platinized substrates by laser-assisted annealing at room temperature

    NASA Astrophysics Data System (ADS)

    Silva, J. P. B.; Khodorov, A.; Almeida, A.; Agostinho Moreira, J.; Pereira, M.; Gomes, M. J. M.

    2014-09-01

    In this work, Ba0.8Sr0.2TiO3 (BST) films were grown by pulse laser ablation on bare glass and platinized substrates. The crystalline phase was obtained with the help of laser-assisted annealing (LAA) at room temperature, in air environment. By adjusting LAA conditions, like frequency of the laser and number of shots, we were able to grow crack-free BST thin films with pure perovskite phase on bare glass and platinized substrates. The crystalline layer was found to be the same irrespective of the substrate used, c.a. 250 nm thick. The electric characteristics of the amorphous and LAA crystalline BST films deposited on platinized substrate were further studied and analyzed. While in amorphous films it was found that the oxygen defects are responsible for conduction, in LAA films the amorphous/crystalline interface layer plays an important role in current leakage.

  8. Sintering Characteristics of Multilayered Thermal Barrier Coatings Under Thermal Gradient and Isothermal High Temperature Annealing Conditions

    NASA Technical Reports Server (NTRS)

    Rai, Amarendra K.; Schmitt, Michael P.; Bhattacharya, Rabi; Zhu, Dongming; Wolfe, Douglas E.

    2014-01-01

    Pyrochlore oxides have most of the relevant attributes for use as next generation thermal barrier coatings such as phase stability, low sintering kinetics and low thermal conductivity. One of the issues with the pyrochlore oxides is their lower toughness and therefore higher erosion rate compared to the current state-of-the-art TBC material, yttria (6 to 8 wt%) stabilized zirconia (YSZ). In this work, sintering characteristics were investigated for novel multilayered coating consisted of alternating layers of pyrochlore oxide viz Gd2Zr2O7 and t' low k (rare earth oxide doped YSZ). Thermal gradient and isothermal high temperature (1316 C) annealing conditions were used to investigate sintering and cracking in these coatings. The results are then compared with that of relevant monolayered coatings and a baseline YSZ coating.

  9. One-dimensional gratings evolving through high-temperature annealing: sine-generated solutions.

    PubMed

    Madrid, Marcos A; Salvarezza, Roberto C; Castez, Marcos F

    2012-01-11

    Sine-generated curves (i.e. curves in which the curvature is a sine function of the arc-length parameter) have been used in the past to describe river meanders. Here we show how these curves spontaneously appear during the decay of high-aspect-ratio surfaces mediated by surface diffusion. We obtained analytical results for the kinetic evolution of such processes relevant to a wide class of initial geometries. Our theoretical results were satisfactorily compared with numerical simulations and with results from previous approaches to the same problem, and they can be useful for interpreting and designing experiments related to the technologically important process of high-temperature annealing on nano/micro-structured samples.

  10. Wide Temperature Core Loss Characteristics of Transverse Magnetically Annealed Amorphous Tapes for High Frequency Aerospace Magnetics

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.; Schwarze, Gene E.

    1999-01-01

    100 kHz core loss properties of sample transverse magnetically annealed, cobalt-based amorphous and iron-based nanocrystalline tape wound magnetic cores are presented over the temperature range of -150 C to 150 C, at selected values of B(sub peak). For B-fields not close to saturation, the core loss is not sensitive to temperature in this range and is as low as seen in the best MnZn power ferrites at their optimum temperatures. Frequency resolved characteristics are given over the range of 50 kHz to 1 MHz, but at B(sub peak) = 0.1 T and 50 C only. For example, the 100 kHz specific core loss ranged from 50 - 70 mW/cubic cm for the 3 materials, when measured at 0.1 T and 50 C. This very low high frequency core loss, together with near zero saturation magnetostriction and insensitivity to rough handling, makes these amorphous ribbons strong candidates for power magnetics applications in wide temperature aerospace environments.

  11. Thermal decay analysis of fiber Bragg gratings at different temperature annealing rates using demarcation energy approximation

    NASA Astrophysics Data System (ADS)

    Gunawardena, Dinusha Serandi; Lai, Man-Hong; Lim, Kok-Sing; Ahmad, Harith

    2017-03-01

    In this study the thermal degradation of gratings inscribed in three types of fiber namely, PS 1250/1500, SM 1500 and zero water peak single mode fiber is demonstrated. A comparative investigation is carried out on the aging characteristics of the gratings at three different temperature ramping rates of 3 °C/min, 6 °C/min and 9 °C/min. During the thermal annealing treatment, a significant enhancement in the grating reflectivity is observed for PS 1250/1500 fiber from ∼1.2 eV until 1.4 eV which indicates a thermal induced reversible effect. Higher temperature ramping rates lead to a higher regeneration temperature. In addition, the investigation also reflects that regardless of the temperature ramping rate the thermal decay behavior of a specific fiber can be successfully characterized when represented in a demarcation energy domain. Moreover, this technique can be accommodated when predicting the thermal decay characteristics of a specific fiber.

  12. Investigation of the optimal annealing temperature for the enhanced thermoelectric properties of MOCVD-grown ZnO films

    NASA Astrophysics Data System (ADS)

    Mahmood, K.; Ali, A.; Arshad, M. I.; Ajaz un Nabi, M.; Amin, N.; Faraz Murtaza, S.; Rabia, S.; Azhar Khan, M.

    2017-04-01

    In this study, we demonstrate the optimization of the annealing temperature for enhanced thermoelectric properties of ZnO. Thin films of ZnO are grown on a sapphire substrate using the metal organic chemical Vapor Deposition (MOCVD) technique. The grown films are annealed in an oxygen environment at 600-1000°C, with a step of 100°C for one hour. Seebeck measurements at room temperature revealed that the Seebeck coefficient of the sample that was not annealed was 152 μV/K, having a carrier concentration of N D 1.46 × 1018 cm-3. The Seebeck coefficient of the annealed films increased from 212 to 415 μV/K up to 900°C and then decreased at 1000°C. The power factor is calculated and found to have an increasing trend with the annealing temperature. This observation is explained by the theory of Johnson and Lark-Horovitz that thermoelectric properties are enhanced by improving the structure of ZnO thin films. The Hall measurements and PL data strongly justify the proposed argument.

  13. Influence of annealing temperature on Pb(Zr,Ti)O3 nanoparticles growth on multi-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Jeon, Do Hyun; Han, Jin Kyu; Bu, Sang Don

    2015-01-01

    We report the influence of annealing temperature on Pb(Zr,Ti)O3 nanoparticles (PZT NPs) grown on multi-walled carbon nanotubes (MWCNTs). The nanocomposites consist of PZT NPs and MWCNTs that were successfully prepared by using a sol-gel process, followed by an injection using a syringe filter and then by rapid thermal annealing. Field-emission transmission electron microscopy (FETEM) indicated that as the annealing temperature was increased, the shape and the crystallinity of the PZT NPs on the MWCNTs changed from an amorphous structure to the perovskite phase of PZT. Raman spectroscopy showed that the ratio of the intensity of G band to that of the D band, which indicates the crystal purity of the MWCNTs, decreased from 0.57 to 0.55 when the annealing temperature was increased from 500 to 700 °C. A separate distribution of elemental C in the PZT NPs on the MWCNTs annealed at 600 °C was directly observed via energy dispersive X-ray spectroscopy.

  14. Rapid Thermal Annealing of Cathode-Garnet Interface toward High-Temperature Solid State Batteries.

    PubMed

    Liu, Boyang; Fu, Kun; Gong, Yunhui; Yang, Chunpeng; Yao, Yonggang; Wang, Yanbin; Wang, Chengwei; Kuang, Yudi; Pastel, Glenn; Xie, Hua; Wachsman, Eric D; Hu, Liangbing

    2017-08-09

    High-temperature batteries require the battery components to be thermally stable and function properly at high temperatures. Conventional batteries have high-temperature safety issues such as thermal runaway, which are mainly attributed to the properties of liquid organic electrolytes such as low boiling points and high flammability. In this work, we demonstrate a truly all-solid-state high-temperature battery using a thermally stable garnet solid-state electrolyte, a lithium metal anode, and a V2O5 cathode, which can operate well at 100 °C. To address the high interfacial resistance between the solid electrolyte and cathode, a rapid thermal annealing method was developed to melt the cathode and form a continuous contact. The resulting interfacial resistance of the solid electrolyte and V2O5 cathode was significantly decreased from 2.5 × 10(4) to 71 Ω·cm(2) at room temperature and from 170 to 31 Ω·cm(2) at 100 °C. Additionally, the diffusion resistance in the V2O5 cathode significantly decreased as well. The demonstrated high-temperature solid-state full cell has an interfacial resistance of 45 Ω·cm(2) and 97% Coulombic efficiency cycling at 100 °C. This work provides a strategy to develop high-temperature all-solid-state batteries using garnet solid electrolytes and successfully addresses the high contact resistance between the V2O5 cathode and garnet solid electrolyte without compromising battery safety or performance.

  15. Growth of intermetallic phases in Al/Cu composites at various annealing temperatures during the ARB process

    NASA Astrophysics Data System (ADS)

    Hsieh, Chih-Chun; Shi, Ming-Shou; Wu, Weite

    2012-02-01

    The purpose of this study is to discuss the effect of annealing temperatures on growth of intermetallic phases in Al/Cu composites during the accumulative roll bonding (ARB) process. Pure Al (AA1100) and pure Cu (C11000) were stacked into layered structures at 8 cycles as annealed at 300 °C and 400 °C using the ARB technique. Microstructural results indicate that the necking of layered structures occur after 300 °C annealing. Intermetallic phases grow and form a smashed morphology of Al and Cu when annealed at 400 °C. From the XRD and EDS analysis results, the intermetallic phases of Al2Cu (θ) and Al4Cu9 (γ2) formed over 6 cycles and the AlCu (η2) precipitated at 8 cycles after 300 °C annealing. Three phases (Al2Cu (θ), Al4Cu9 (γ2), and AlCu (η2)) were formed over 2 cycles after 400 °C annealing.

  16. The effect of annealing temperature on the magnetic anisotropy in Co ultrathin film on MgO(001) substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Yong-Sheng; He, Wei; Tang, Jin; Ahmad, Syed Sheraz; Zhang, Wei; Li, Yan; Zhang, Xiang-Qun; Cheng, Zhao-Hua

    2017-05-01

    Co epitaxial thin films with 2.5nm thickness were prepared on single-crystal MgO(001) substrates and annealed at different temperatures. The contribution of each interface of the MgO/Co/Cu trilayer to the in-plane magnetic anisotropy (IMA) was studied by changing interfacial coupling through annealing. The structure was measured by low energy electron diffraction (LEED), and the magnetic properties were measured using the anisotropic magnetoresistance (AMR) measurements and the longitudinal Magneto-optical Kerr effect magnetometer (MOKE). We found that the magnetic anisotropy of the as-deposited one shows superposition of a two-fold symmetry with a weak four-fold contribution caused by the stress of the interface between Co/Cu, which is along the easy axis [-110]. After annealing at 200°C, the symmetry of magnetic anisotropy was changed from uniaxial magnetic anisotropy (UMA) into four-fold symmetry due to the significant increasing of four-fold magnetocrystalline anisotropy. When the films were annealed above 300°C, the damage of the MgO/Co interface additionally decreased the IMA to isotropy. Meanwhile, the coercivity raised from 45Oe (without annealing) to 1200Oe (annealed at 400°C) along the easy axis direction. Our experimental results prove that the Co/Cu interface and the MgO/Co interface play an essential role in manipulating the four-fold and the UMA in the system.

  17. Temperature Dependence of Large Polaron Superconductivity.

    DTIC Science & Technology

    1995-07-18

    to explain the variation of critical temperature Tc with chemical composition and the temperature dependence of high-Tc superconductor properties is...One result of this refinement is a clearer picture of the dependence of electron hopping activation energy on crystal-field parameters. A... dependence is more typically exponential. With these improvements, precise fits to penetration depth versus temperature measurements for high-purity YBCO

  18. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  19. Influences of annealing temperature on microstructure and properties for TiO2 films deposited by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shang, Jie-Ting; Chen, Chih-Ming; Cheng, Ta-Chih; Lee, Ying-Chieh

    2015-12-01

    Titanium dioxide films were deposited at 100 °C of substrate temperature with a DC magnetron sputtering system. The crystalline structures, morphological features, and photocatalytic activity of the TiO2 films were systematically studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and ultraviolet spectrophotometry. To obtain the crystalline structure of TiO2 film at a low annealing temperature, high-level DC power (600 W) was applied. The effect of the annealing treatments on the microstructure of the TiO2 films was investigated. The results indicated that the annealing process at 200 °C clearly caused the formation of a nanocrystalline anatase phase that directly affected photocatalytic activity. The dye removal efficiency of the nanostructured anatase attained 53 and 31% for UV and visible light radiation, respectively.

  20. Temperature dependent localized surface plasmon resonance properties of supported gold nanoparticles

    SciTech Connect

    Laha, Ranjit; Ranjan, Pranay

    2016-05-23

    The well known localized surface plasmon resonance (LSPR) of gold nanoparticles (AuNPs) supported on a dielectric substrate depends on the particle shape, size and type of dielectric material. The particle size and shape mainly vary with the method of preparation and the parameters involved there in. In this report, we show preparation of AuNPs supported on quartz substrate by direct current sputtering followed by thermal annealing at an optimized temperature of 400 °C. The samples were characterized using optical absorption spectra, scanning electron microscopy (SEM) and the energy dispersive x-ray spectrum. The LSPR position could be tuned by varying annealing temperature. The LSPR was found to be blue shifted up to 10 nm with annealing temperature varying from 400 °C to 800 °C. The change in LSPR was ascribed to the morphology of AuNPs over quartz.

  1. 454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature.

    PubMed

    Gonzalez-Martinez, Alejandro; Rodriguez-Sanchez, Alejandro; Rodelas, Belén; Abbas, Ben A; Martinez-Toledo, Maria Victoria; van Loosdrecht, Mark C M; Osorio, F; Gonzalez-Lopez, Jesus

    2015-01-01

    Identification of anaerobic ammonium oxidizing (anammox) bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing) of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON) and three full-scale bioreactors (anammox, CANON, and DEMON), was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature). The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C) and hence a range of annealing temperatures of 44-49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed.

  2. 454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature

    PubMed Central

    Rodriguez-Sanchez, Alejandro; Rodelas, Belén; Abbas, Ben A.; Martinez-Toledo, Maria Victoria; van Loosdrecht, Mark C. M.; Osorio, F.; Gonzalez-Lopez, Jesus

    2015-01-01

    Identification of anaerobic ammonium oxidizing (anammox) bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing) of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON) and three full-scale bioreactors (anammox, CANON, and DEMON), was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature). The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C) and hence a range of annealing temperatures of 44–49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed. PMID:26421306

  3. Characterization of microstructure in hydrogen ion irradiated vanadium at room temperature and the microstructural evolution during post-irradiation annealing

    SciTech Connect

    Gao, Jin; Cui, Lijuan; Wan, Farong

    2016-01-15

    The microstructure of pure vanadium after hydrogen ion irradiation at room temperature to a fluence of 1 × 10{sup 17} ions/cm{sup 2} (and 5 × 10{sup 16} ions/cm{sup 2}) was investigated by transmission electron microscopy (TEM). Small dislocation loops (black spots) and cavities are formed after the irradiation. The nature and Burgers vector of dislocation loops formed in vanadium was characterized using g·b technique and inside–outside method. Interstitial dislocation loops with Burgers vector of 1/2 < 111 > predominantly formed with less than 10% of 1/2 < 110 > type. No < 100 > type or vacancy type dislocation loop formed. The microstructural evolution during the annealing process was also studied. Density and size of dislocation loops changed sharply when the annealing temperature was lifted up to 450 °C. When the annealing temperature was higher than 500 °C, bubble coalescence occurred with some large hydrogen bubbles formed. - Highlights: • Interstitial dislocation loops with Burgers vector of 1/2<111> were predominant. • Less than 10% of 1/2<110> dislocation loops were present in pure vanadium. • No <100> or vacancy type loops were present in pure vanadium. • Density and size of dislocation loops changed sharply at temperature above 450 °C. • Bubble coalescence occurred when annealing temperature was higher than 500 °C.

  4. Wide Temperature Characteristics of Transverse Magnetically Annealed Amorphous Tapes for High Frequency Aerospace Magnetics

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.

    1999-01-01

    100 kHz core loss and magnetization properties of sample transverse magnetically annealed, cobalt-based amorphous and iron-based nanocrystalline tape wound magnetic cores are presented over the temperature range of -150 to 150 C, at selected values of B(sub peak). For B-fields not close to saturation, the core loss is not sensitive to temperature in this range and is as low as seen in the best MnZn power ferrites at their optimum temperatures. Frequency resolved characteristics are given over the range of 50 kHz to 1 MHz, at B(sub peak) = 0.1 T and 50 C only. A linear permeability model is used to interpret and present the magnetization characteristics and several figures of merit applicable to inductor materials arc reviewed. This linear modeling shows that, due to their high permeabilities, these cores must he gapped in order to make up high Q or high current inductors. However, they should serve well, as is, for high frequency, anti ratcheting transformer applications.

  5. Elevated temperature annealing behaviors of bulk resistivity and space charge density (Neff) of neutron irradiated silicon detectors and materials

    NASA Astrophysics Data System (ADS)

    Z., Li

    1996-02-01

    The bulk resistivity of neutron irradiated detector grade silicon material has been measured under the condition of no or low electrical filed (electrical neutral bulk or ENB condition) after elevated temperature (T = 110°C) anneals (ETA). The ENB resistivity (ρ) for as-irradiated silicon material increases with neutron fluence at low fluences (Φn > 1013 n/cm2). The saturation of the ENB resistivity near the intrinsic value can be explained by the near perfect compensation of all neutron induced deep donors and acceptors in the ENB. After ETA, it has been observed that ρ increases with annealing time for silicon materials irradiated below the saturation and decreases with annealing time for those irradiated after saturation. For those irradiated near the saturation point, ρ increases with annealing time initially and decreases thereafter. This ETA behavior of ρ may be explained by the increase of net acceptor-like deep levels in silicon during the anneal, qualitatively consistent with the observed reverse annealing effect of the space charge density (Neff) in silicon detectors which is an increase of negative space charge density (acceptors) after long term room temperature (RTA) anneal and/or ETA. However, the amount of the increase of net hole concentration (p) of about 5 × 1011 cm-3, corresponding to 20 hours of ETA at 110°C for a fluence of 1.5 × 1014 n/cm2, is still much less than the corresponding increase of Neff of about 1.5 × 1013 cm-3. This suggests that while the ETA restores some of the free carrier concentration (namely holes), there is still a large degree of compensation. The space charge density is still dominated by the deep levels and Neff ≠ p.

  6. Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.

    2008-01-01

    BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

  7. Catalyst-free growth of ZnO nanowires on ITO seed layer/glass by thermal evaporation method: Effects of ITO seed layer laser annealing temperature

    NASA Astrophysics Data System (ADS)

    Alsultany, Forat H.; Hassan, Z.; Ahmed, Naser M.

    2016-04-01

    Novel catalyst-free growth of ZnO nanowires (ZnO-NWs) on ITO seeds/glass substrate by thermal evaporation method, and effects of continuous wave CO2 laser thermal annealed seed layer on the morphology and properties of ZnO-NWs growth were investigated. The effects of sputtered ITO seed layer laser annealing temperature on the morphological, structural, and optical properties of ZnO-NWs was systematically investigated at temperatures 250, 350, and 450 °C, respectively. The surface morphology and structure of the seeds and the products of ZnO-NWs were characterized in detail by using field emission scanning electron microscopy, atomic force microscopy, and X-ray diffraction. Optical properties were further examined through photoluminescence, and UV-Vis spectrophotometer. A growth mechanism was proposed on the basis of obtained results. The results showed that the nanowires were strongly dependent on the seed layer annealing temperatures, which played an important role in nucleation and dissimilar growth of the nanowires with varying sizes and geometric shapes.

  8. Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing.

    PubMed

    Meng, Yu-fei; Yan, Chih-shiue; Lai, Joseph; Krasnicki, Szczesny; Shu, Haiyun; Yu, Thomas; Liang, Qi; Mao, Ho-kwang; Hemley, Russell J

    2008-11-18

    Single crystal diamond produced by chemical vapor deposition (CVD) at very high growth rates (up to 150 microm/h) has been successfully annealed without graphitization at temperatures up to 2200 degrees C and pressures <300 torr. Crystals were annealed in a hydrogen environment by using microwave plasma techniques for periods of time ranging from a fraction of minute to a few hours. This low-pressure/high-temperature (LPHT) annealing enhances the optical properties of this high-growth rate CVD single crystal diamond. Significant decreases are observed in UV, visible, and infrared absorption and photoluminescence spectra. The decrease in optical absorption after the LPHT annealing arises from the changes in defect structure associated with hydrogen incorporation during CVD growth. There is a decrease in sharp line spectral features indicating a reduction in nitrogen-vacancy-hydrogen (NVH(-)) defects. These measurements indicate an increase in relative concentration of nitrogen-vacancy (NV) centers in nitrogen-containing LPHT-annealed diamond as compared with as-grown CVD material. The large overall changes in optical properties and the specific types of alterations in defect structure induced by this facile LPHT processing of high-growth rate single-crystal CVD diamond will be useful in the creation of diamond for a variety of scientific and technological applications.

  9. Enhanced Optical Properties of Chemical Vapor Deposited Single Crystal Diamond by Low-Pressure/High-Temperature Annealing

    SciTech Connect

    Meng, Y.; Yan, C; Lai, Y; Krasnicki, S; Shu, H; Yu, T; Liang, Q; Mao, H; Hemley, R

    2008-01-01

    Single crystal diamond produced by chemical vapor deposition (CVD) at very high growth rates (up to 150 em/h) has been successfully annealed without graphitization at temperatures up to 2200 C and pressures <300 torr. Crystals were annealed in a hydrogen environment by using microwave plasma techniques for periods of time ranging from a fraction of minute to a few hours. This low-pressure/high-temperature (LPHT) annealing enhances the optical properties of this high-growth rate CVD single crystal diamond. Significant decreases are observed in UV, visible, and infrared absorption and photoluminescence spectra. The decrease in optical absorption after the LPHT annealing arises from the changes in defect structure associated with hydrogen incorporation during CVD growth. There is a decrease in sharp line spectral features indicating a reduction in nitrogen-vacancy-hydrogen (NVH-) defects. These measurements indicate an increase in relative concentration of nitrogen-vacancy (NV) centers in nitrogen-containing LPHT-annealed diamond as compared with as-grown CVD material. The large overall changes in optical properties and the specific types of alterations in defect structure induced by this facile LPHT processing of high-growth rate single-crystal CVD diamond will be useful in the creation of diamond for a variety of scientific and technological applications.

  10. Temperature dependence of nucleation in Yukawa fluids

    NASA Astrophysics Data System (ADS)

    Li, J.-S.; Wilemski, G.

    2002-03-01

    We have studied the temperature dependence of gas-liquid nucleation in Yukawa fluids with gradient theory (GT) and density functional theory (DFT). Each of these nonclassical theories exhibits a weaker (i.e. better) temperature dependence than classical nucleation theory. At a given temperature, the difference between GT and DFT for the reversible work to form a critical nucleus gets smaller with increasing superaturation. For the temperature dependence, the reversible work for GT is very close to that for DFT at high temperatures. The difference between the two theories increases with decreasing temperature and supersaturation. Thus, in contrast to the behavior of a Peng-Robinson fluid, we find that GT can improve the temperature dependence over that of classical nucleation theory, although not always to the same degree as DFT.

  11. Schizosaccharomyces pombe switches mating type by the synthesis-dependent strand-annealing mechanism.

    PubMed

    Yamada-Inagawa, Tomoko; Klar, Amar J S; Dalgaard, Jacob Z

    2007-09-01

    Schizosaccharomyces pombe cells can switch between two mating types, plus (P) and minus (M). The change in cell type occurs due to a replication-coupled recombination event that transfers genetic information from one of the silent-donor loci, mat2P or mat3M, into the expressed mating-type determining mat1 locus. The mat1 locus can as a consequence contain DNA encoding either P or M information. A molecular mechanism, known as synthesis-dependent strand annealing, has been proposed for the underlying recombination event. A key feature of this model is that only one DNA strand of the donor locus provides the information that is copied into the mat1. Here we test the model by constructing strains that switch using two different mutant P cassettes introduced at the donor loci, mat2 and mat3. We show that in such strains wild-type P-cassette DNA is efficiently generated at mat1 through heteroduplex DNA formation and repair. The present data provide an in vivo genetic test of the proposed molecular recombination mechanism.

  12. Schizosaccharomyces pombe Switches Mating Type by the Synthesis-Dependent Strand-Annealing Mechanism

    PubMed Central

    Yamada-Inagawa, Tomoko; Klar, Amar J. S.; Dalgaard, Jacob Z.

    2007-01-01

    Schizosaccharomyces pombe cells can switch between two mating types, plus (P) and minus (M). The change in cell type occurs due to a replication-coupled recombination event that transfers genetic information from one of the silent-donor loci, mat2P or mat3M, into the expressed mating-type determining mat1 locus. The mat1 locus can as a consequence contain DNA encoding either P or M information. A molecular mechanism, known as synthesis-dependent strand annealing, has been proposed for the underlying recombination event. A key feature of this model is that only one DNA strand of the donor locus provides the information that is copied into the mat1. Here we test the model by constructing strains that switch using two different mutant P cassettes introduced at the donor loci, mat2 and mat3. We show that in such strains wild-type P-cassette DNA is efficiently generated at mat1 through heteroduplex DNA formation and repair. The present data provide an in vivo genetic test of the proposed molecular recombination mechanism. PMID:17660548

  13. Influence of annealing temperature on electronic and dielectric properties of ZrO{sub 2} thin films on Si

    SciTech Connect

    Uthanna, S.; Kondaiah, P.; Madhavi, V.; Rao, G. Mohan

    2012-06-25

    Zirconium oxide (ZrO{sub 2}) films were deposited on (100) silicon substrates by DC reactive magnetron sputtering of zirconium target at an oxygen partial pressure of 6 Multiplication-Sign 10{sup -2} Pa. The as-deposited films were annealed in air for 1 hour at different temperatures in the range 773 - 1173 K. The influence of annealing temperature on the structural properties of ZrO{sub 2} films and the electrical properties like Capacitance-Voltage and Current-Voltage of the capacitors of the type Al/ZrO{sub 2}/p-Si were studied. The capacitance and dielectric constant of the capacitors were found to increase with increase in annealing temperature from 773 to 973 K, however, with further increase in annealing temperature to 1173 K they were found to decrease. In addition, the leakage current density was decreased from 1 Multiplication-Sign 10{sup -6} to 4 Multiplication-Sign 10{sup -7} A/cm{sup 2} at 1V gate bias voltage and the electrical conduction mechanism was dominated by Schottky emission for all the films in lower electric fields.

  14. Influence of annealing temperature on electronic and dielectric properties of ZrO2 thin films on Si

    NASA Astrophysics Data System (ADS)

    Uthanna, S.; Kondaiah, P.; Madhavi, V.; Rao, G. Mohan

    2012-06-01

    Zirconium oxide (ZrO2) films were deposited on (100) silicon substrates by DC reactive magnetron sputtering of zirconium target at an oxygen partial pressure of 6 × 10-2 Pa. The as-deposited films were annealed in air for 1 hour at different temperatures in the range 773 - 1173 K. The influence of annealing temperature on the structural properties of ZrO2 films and the electrical properties like Capacitance-Voltage and Current-Voltage of the capacitors of the type Al/ZrO2/p-Si were studied. The capacitance and dielectric constant of the capacitors were found to increase with increase in annealing temperature from 773 to 973 K, however, with further increase in annealing temperature to 1173 K they were found to decrease. In addition, the leakage current density was decreased from 1 × 10-6 to 4 × 10-7 A/cm2 at 1V gate bias voltage and the electrical conduction mechanism was dominated by Schottky emission for all the films in lower electric fields.

  15. Temperature dependence of the electrical properties of hydrogen titanate nanotubes

    SciTech Connect

    Alves, Diego C. B.; Brandão, Frederico D.; Krambrock, Klaus; Ferlauto, Andre S.; Fonseca, Fabio C.

    2014-11-14

    The temperature dependence of the electrical properties of hydrogen-rich titanate nanotubes (H-TNTs) in the 90–270 °C range was investigated by impedance spectroscopy. Three types of dominant conduction were found which depend on the previous thermal treatment of the samples. For untreated samples, at low temperatures (T < 100 °C), electrical conductivity is relatively high (>10{sup −4} S/cm at T ≈ 90 °C) and is dominated by protonic transport within structural water molecules. For thermal annealing in inert atmosphere up to 150 °C, water molecules are released from the nanotube structure resulting in a dehydrated H{sub 2}Ti{sub 3}O{sub 7} phase. Such phase has a low, thermally-dependent, electrical conductivity (10{sup −8} S/cm at T ≈ 90 °C) with activation energy of 0.68 eV. For samples annealed up to 260 °C, loss of OH groups, and consequent generation of oxygen vacancies, occurs that result in the non-stoichiometric H{sub 2(1−z)}Ti{sub 3}O{sub 7−z} phase. This phase has much higher conductivity (10{sup −5} S/cm at T ≈ 90 °C) and lower associated activation energy (0.40 eV). The generation of oxygen vacancies is confirmed by electron paramagnetic resonance measurements at room temperature, which revealed the presence of single-electron-trapped oxygen vacancies. The activation energy value found is consistent with the thermal ionization energy of the oxygen vacancies. Such defect formation represents the initial stage of the phase transformation from titanate to TiO{sub 2} (B). X-ray diffraction and Raman spectroscopy measurements also support such interpretation.

  16. Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

    SciTech Connect

    Leppäniemi, J. Ojanperä, K.; Kololuoma, T.; Huttunen, O.-H.; Majumdar, H.; Alastalo, A.; Dahl, J.; Tuominen, M.; Laukkanen, P.

    2014-09-15

    We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In{sub 2}O{sub 3}) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ∼1 cm{sup 2}/(V·s). Amorphous In{sub 2}O{sub 3} films annealed for 15 min with FUV at temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm{sup 2}/(V·s) and 7.5 cm{sup 2}/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.

  17. Effect of Water Vapor, Temperature, and Rapid Annealing on Formamidinium Lead Triiodide Perovskite Crystallization

    SciTech Connect

    Aguiar, Jeffery A.; Wozny, Sarah; Alkurd, Nooraldeen R.; Yang, Mengjin; Kovarik, Libor; Holesinger, Terry G.; Al-Jassim, Mowafak; Zhu, Kai; Zhou, Weilie; Berry, Joseph J.

    2016-07-08

    Perovskite-based solar cells are one of the emerging candidates for radically lower cost photovoltaics. Herein, we report on the synthesis and crystallization of organic-inorganic formamidinium lead triiodide perovskite films under controlled atmospheric and environmental conditions. Using in situ (scanning) transmission electron microscopy, we make observations of the crystallization process of these materials in nitrogen and oxygen gas with and without the presence of water vapor. Complementary planar samples were also fabricated in the presence of water vapor and characterized by in situ X-ray diffraction. Direct observations of the material structure and final morphology indicate that the exposure to water vapor results in a porous film that is metastable, regardless of the presence of argon, nitrogen, or oxygen. However, the optimal crystallization temperature of 175 °C is unperturbed across conditions. Rapid modulation about the annealing temperature of 175 °C in ±25 °C steps (150-200 °C) promotes crystallization and significantly improves the film morphology by overcoming the presence of impregnated water trapped in the material. Following this processing protocol, we demonstrate substantial growth to micron-size grains via observation inside of an environmentally controlled transmission electron microscope. Adapting this insight from our in situ microscopy, we are able to provide an informed materials protocol to control the structure and morphology of these organic-inorganic semiconductors, which is readily applicable to benchtop device growth strategies.

  18. Effect of Water Vapor, Temperature, and Rapid Annealing on Formamidinium Lead Triiodide Perovskite Crystallization

    SciTech Connect

    Aguiar, Jeffery A.; Wozny, Sarah; Alkurd, Nooraldeen R.; Yang, Mengjin; Kovarik, Libor; Holesinger, Terry G.; Al-Jassim, Mowafak; Zhu, Kai; Zhou, Weilie; Berry, Joseph J.

    2016-07-08

    Perovskite-based solar cells are one of the emerging candidates for radically lower cost photovoltaics. Herein, we report on the synthesis and crystallization of organic-inorganic formamidinium lead triiodide perovskite films under controlled atmospheric and environmental conditions. Using in situ (scanning) transmission electron microscopy, we make observations of the crystallization process of these materials in nitrogen and oxygen gas with and without the presence of water vapor. Complementary planar samples were also fabricated in the presence of water vapor and characterized by in situ X-ray diffraction. Direct observations of the material structure and final morphology indicate that the exposure to water vapor results in a porous film that is metastable, regardless of the presence of argon, nitrogen, or oxygen. However, the optimal crystallization temperature of 175 degrees C is unperturbed across conditions. Rapid modulation about the annealing temperature of 175 degrees C in +/-25 degrees C steps (150-200 degrees C) promotes crystallization and significantly improves the film morphology by overcoming the presence of impregnated water trapped in the material. Following this processing protocol, we demonstrate substantial growth to micron-size grains via observation inside of an environmentally controlled transmission electron microscope. Adapting this insight from our in situ microscopy, we are able to provide an informed materials protocol to control the structure and morphology of these organic-inorganic semiconductors, which is readily applicable to benchtop device growth strategies.

  19. Effects of Annealing Temperature on Exchange Spring Behavior of Barium Hexaferrite/Nickel Zinc Ferrite Nanocomposites

    NASA Astrophysics Data System (ADS)

    Nikmanesh, Hossein; Moradi, Mahmood; Kameli, Parviz; Bordbar, Gholam Hossein

    2017-10-01

    (BaFe12O19)1- x /(Ni0.6Zn0.4Fe2O4) x magnetic nanocomposites with various molar ratios ( x = 0.0, 0.1, 0.2, 0.3) have been synthesized by a physical mixing method at different temperatures ( T = 700°C to 900°C) and their structure, morphology, and magnetic properties investigated using x-ray diffraction analysis, Fourier-transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, and vibrating-sample magnetometry. The results prove that their magnetic properties were strongly influenced by the sintering temperature as well as the molar ratio of hard to soft phase. The magnetization and switching field distribution curves for the nanocomposites sintered above 800°C showed a single smooth hysteresis loop, suggesting the existence of the exchange spring phenomenon. The variation of the coercivity, saturation magnetization, and ratio of remanence to saturation magnetization ( M r/ M s) with the hard-to-soft weight ratio can be explained based on the role of exchange and dipole interactions in the nanocomposites. High maximum energy product ( BH)max was obtained for the (BaFe12O19)0.9/(Ni0.6Zn0.4Fe2O4)0.1 sample annealed at 800°C.

  20. Uranium luminescence in La2 Zr2 O7 : effect of concentration and annealing temperature.

    PubMed

    Mohapatra, M; Rajeswari, B; Hon, N S; Kadam, R M

    2016-12-01

    The speciation of a particular element in any given matrix is a prerequisite to understanding its solubility and leaching properties. In this context, speciation of uranium in lanthanum zirconate pyrochlore (La2 Zr2 O7  = LZO), prepared by a low-temperature combustion route, was carried out using a simple photoluminescence lifetime technique. The LZO matrix is considered to be a potential ceramic host for fixing nuclear and actinide waste products generated during the nuclear fuel cycle. Special emphasis has been given to understanding the dynamics of the uranium species in the host as a function of annealing temperature and concentration. It was found that, in the LZO host, uranium is stabilized as the commonly encountered uranyl species (UO2(2+) ) up to a heat treatment of 500 °C at the surface. Above 500 °C, the uranyl ion is diffused into the matrix as the more symmetric octahedral uranate species (UO6(6-) ). The uranate ions thus formed replace the six-coordinated 'Zr' atoms at regular lattice positions. Further, it was observed that concentration quenching takes place beyond 5 mol% of uranium doping. The mechanism of the quenching was found to be a multipolar interaction. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

  1. Microstructural changes to AlCu6Ni1 alloy after prolonged annealing at elevated temperature.

    PubMed

    Wierzbińska, M; Sieniawski, J

    2010-03-01

    This work presents results of microstructure examination of AlCu(6)Ni(1) aluminium alloy. The commercial AlCu(4)Ni(2)Mg(2) (M-309) alloy is widely used for elements of aircraft and automotive engines. Modification its chemical composition was aimed at improving the stability of mechanical properties of the alloy subjected to long-term exposure to high temperature. The alloy after standard T6 heat treatment (solution heat treated at 818 K/10 h/water quenched followed by ageing at 498 K/8 h/air cooled) was annealed for 150 h at elevated temperature of 573 K corresponding to the maximum value at which structural elements of jet piston engines made of aluminium alloys operate. It was found that applied heat treatment caused an increasing in the particles of hardening phase (theta'-Al(2)Cu) size. The significant growth of the length of theta'-Al(2)Cu precipitations was observed in particularly. Nevertheless, it did not strongly result in change of its shape - the 'crystallites' and 'rods' were still characteristic of hardening phase morphology. The phenomena of the growth of theta'-Al(2)Cu precipitates caused decreasing the mechanical properties of the alloy, what is the subject of further investigations by the authors.

  2. Effect of annealing temperatures on the secondary re-crystallization of extruded PM2000 steel bar.

    PubMed

    Chen, C-L; Tatlock, G J; Jones, A R

    2009-03-01

    The ferritic oxide dispersion-strengthened alloy PM2000 is an ideal candidate for high-temperature applications as it contains uniform nano-oxide dispersoids, which act as pinning points to obstruct dislocation and grain boundary motion and therefore impart excellent creep resistance. The development of the microstructure during re-crystallization of oxide dispersion-strengthened alloys has been discussed by a number of authors, but the precise mechanism of secondary re-crystallization still remains uncertain. Hence, this work is aimed at investigating the re-crystallization behaviour of extruded PM2000 bar for different annealing temperatures, using electron backscatter diffraction, in particular, to determine grain orientations, grain boundary misorientation angles, etc. The results show that the as-extruded bar microstructure comprises both low-angle grain boundaries pinned by oxide particles and high-angle boundaries that will have inherent boundary mobility to allow boundary migration. In addition, dynamical re-crystallization was found in the outer region of the non-heat-treated PM2000 bar, which suggested that deformation heterogeneities can be introduced during thermo-mechanical processing that enhance the nucleation of re-crystallization. Subsequent heat treatments promote and stimulate secondary re-crystallization, giving rise to large grains with few sub-grain boundaries.

  3. Temperature dependent tuning of the flat band voltages of TiO2/Si interfaces

    NASA Astrophysics Data System (ADS)

    Nasim, F.; Ali, A.; Bhatti, A. S.; Naseem, S.

    2011-12-01

    In this work, we present study of charge accumulation at the TiO2/Si interfaces and its variation in the TiO2 thin films sputter-deposited on n-Si, p-Si, and B-implanted Si substrates at various growth temperatures. TiO2 films, deposited in an oxygen deficient environment, showed significant growth of rutile phase and absence of anatase phase in the as-grown films. Annealing in air resulted in emergence of anatase phase, thus improving the ratio of anatase to rutile phase in TiO2 films. The flatband voltages determined from capacitance-voltage measurements were observed to be high in the rutile phase TiO2 and dropped considerably on annealing, due to formation of the anatase phase. The drop in the flatband voltages on annealing was also observed to depend strongly on the initial growth temperature. Films grown at high temperatures showed relatively low flatband voltages as compared to the films grown at room temperature. It is demonstrated that VFB strongly depends on the interface traps, and oxide-related defects were two orders of magnitude smaller than interface traps. The amount of depletion of the interface charge was found to depend on annealing. In the end, we also demonstrate that interface traps and oxide defects are not the only factors affecting the band bending, but the underlying substrate also plays an important role.

  4. Mössbauer spectroscopy research on magnetic softening of Fe84B10C6 amorphous alloy during low-temperature annealing

    NASA Astrophysics Data System (ADS)

    Cao, C. C.; Wang, Y. G.; Xia, G. T.; Zhu, L.; Meng, Y.; Zhai, X. B.

    2017-06-01

    The mechanism of magnetic softening in Fe84B10C6 amorphous alloys annealed at a temperature below the crystallization temperature has been investigated by Mössbauer spectroscopy. With the prolongation of annealing time, saturation flux density (B\\text{S}) increases gradually but coercivity (H\\text{C}) firstly declines to a minimum and then increases drastically. All the modulations of local structure strengthen the magnetic exchange between Fe neighbor atoms during low-temperature annealing. The structural relaxation at the early stage of annealing including annihilation of excess free volume and residual stress rotates the easy axis to the ribbon plane and weakens magnetic anisotropy, while the subsequent structural relaxation contributing to chemical inhomogeneity results in the inverse situation. Thus, appropriate annealing can magnetically soften amorphous alloys. For the Fe84B10C6 amorphous alloy, soft magnetic properties are optimized when annealed at 493 K for 100 s.

  5. Temperature dependence of thermopower in molecular junctions

    NASA Astrophysics Data System (ADS)

    Kim, Youngsang; Lenert, Andrej; Meyhofer, Edgar; Reddy, Pramod

    2016-07-01

    The thermoelectric properties of molecular junctions are of considerable interest due to their promise for efficient energy conversion. While the dependence of thermoelectric properties of junctions on molecular structure has been recently studied, their temperature dependence remains unexplored. Using a custom built variable temperature scanning tunneling microscope, we measured the thermopower and electrical conductance of individual benzenedithiol junctions over a range of temperatures (100 K-300 K). We find that while the electrical conductance is independent of temperature, the thermopower increases linearly with temperature, confirming the predictions of the Landauer theory.

  6. Temperature-dependent susceptibility in ALON

    NASA Astrophysics Data System (ADS)

    West, Bruce J.

    2001-02-01

    Herein, we propose a stochastic model of the complex susceptibility in aluminum nitride (ALON), a polycrystalline transparent ceramic. The proposed model yields an inverse power-law dependence of the dielectric loss tangent on frequency, in remarkably close agreement with data. In addition, the phenomenological parameters are found to be strongly temperature-dependent. This temperature dependence is determined, in the theoretical model, to be a consequence of the thermodynamic properties of the molecular dipoles in the material.

  7. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    SciTech Connect

    Hu, Yu-Min Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung; Li, Sih-Sian

    2015-05-07

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu{sup 2+} state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu{sup 1+} ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.

  8. Effect of annealing temperature on the supercapacitor behaviour of β-V{sub 2}O{sub 5} thin films

    SciTech Connect

    Jeyalakshmi, K.; Vijayakumar, S.; Nagamuthu, S.; Muralidharan, G.

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► Structural, optical, supercapacitor properties of β-V{sub 2}O{sub 5} thin films are reported. ► Influence of annealing temperature on β-V{sub 2}O{sub 5} thin films have been studied. ► Film annealed at 300 °C exhibit lower charge transfer resistance. -- Abstract: Vanadium pentoxide thin films are prepared via sol–gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 °C to 400 °C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V{sub 2}O{sub 5} in β-phase up to annealing temperature of 350 °C and at 400 °C the structural transformation to α-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2–2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 °C for an hour exhibits a maximum specific capacitance of 346 F g{sup −1} at a scan rate of 5 mV s{sup −1}.

  9. Luminescence sensitivity changes in natural quartz induced by high temperature annealing: a high frequency EPR and OSL study

    NASA Astrophysics Data System (ADS)

    Poolton, N. R. J.; Smith, G. M.; Riedi, P. C.; Bulur, E.; Bøtter-Jensen, L.; Murray, A. S.; Adrian, M.

    2000-04-01

    Quartz undergoes very significant luminescence sensitivity changes after high temperature annealing (0-1200 °C), with particular enhancement occurring between the phase transition temperatures 573 and 870 °C. In order to understand why this occurs, high frequency electron paramagnetic resonance (EPR), operating at 90 GHz, has been used to monitor the structure and population of defects in natural sedimentary quartz, following annealing and icons/Journals/Common/gamma" ALT="gamma" ALIGN="TOP"/> -irradiation. The results are compared with the optically stimulated luminescence (OSL) data of the same samples. It is shown that: (i) the structure and population of the dominant [AlO4 ]0 recombination centres are largely unaffected by the annealing process; (ii) the oxygen vacancy E´ centres are destroyed when annealed at temperatures between the phase transitions and; (iii) the numbers of both [TiO4 /H+ ]0 and [TiO4 /Li+ ]0 donors increase between 400 and 700 °C. Photo-EPR spectra are presented, providing evidence that both the Ti associated donors and Al acceptors are directly involved in the OSL process. The heat-induced changes in the population of these EPR defects is mirrored in part by the change in the luminescence sensitivity of several OSL components. Evidence is also presented suggesting that E´ may act as non-radiative centres competing in the OSL process.

  10. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    NASA Astrophysics Data System (ADS)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

    2017-04-01

    Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  11. Temperature dependence of the deformation behavior of 316 stainless steel after low temperature neutron irradiation

    SciTech Connect

    Pawel-Robertson, J.E.; Rowcliffe, A.F.; Grossbeck, M.L.

    1996-10-01

    The effects of low temperature neutron irradiation on the tensile behavior of 316 stainless steel have been investigated. A single heat of solution annealed 316 was irradiated to 7 and 18 dpa at 60, 200, 330, and 400{degrees}C. The tensile properties as a function of dose and as a function of temperature were examined. Large changes in yield strength, deformation mode, strain to necking, and strain hardening capacity were seen in this irradiation experiment. The magnitudes of the changes are dependent on both irradiation temperature and neutron dose. Irradiation can more than triple the yield strength over the unirradiated value and decrease the strain to necking (STN) to less than 0.5% under certain conditions. A maximum increase in yield strength and a minimum in the STN occur after irradiation at 330{degrees}C but the failure mode remains ductile.

  12. The room temperature annealing peak in ionomers: Ionic crystallites or water absorption

    SciTech Connect

    Goddard, R.J.; Grady, B.P.; Cooper, S.L. . Dept. of Chemical Engineering)

    1994-03-28

    A quaternized diol, 3-(trimethylammonio)-1,2-propanediol neutralized with either bromine or iodine, was used to produce a polyurethane cationomer with a poly(tetramethylene oxide) soft segment and a 4,4[prime]-diphenylmethane diisocyanate hard segment. If those cationomers were annealed at room temperature for a period of approximately 1 month in a desiccator filled with dry CaSO[sub 4], differential scanning calorimetry (DSC) studies showed an endotherm centered near 70 C which was not present in the unannealed polymer and did not reappear upon subsequent cooling and heating cycles in the DSC. Some authors have suggested that a very similar endotherm found in other ionomers, most notably ethylene-methacrylic acid (E-MAA) copolymer ionomers, was due to an order-disorder transition within the ionic aggregates, i.e. ionic crystallite melting. In order to isolate the origin of this endotherm, the local environment around the anion in compression molded bromine neutralized samples was measured using the extended X-ray absorption fine-structure (EXAFS) technique. By measuring the change in the local environment over the temperature range corresponding to the DSC endotherm, it has been shown that this endotherm corresponds to water leaving the bromine coordination shell, rather than ionic crystallite melting. Other studies which include thoroughly drying the material in a vacuum oven below the transition temperature to remove the water suggest that the endotherm is due to the energetic change associated with water leaving the coordination environment of the anion in combination with water vaporization.

  13. Wide Temperature Magnetization Characteristics of Transverse Magnetically Annealed Amorphous Tapes for High Frequency Aerospace Magnetics

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.; Schwarze, Gene E.

    1999-01-01

    100 kHz magnetization properties of sample transverse magnetically annealed, cobalt-based amorphous and iron-based nanocrystalline tape wound magnetic cores are presented over the temperature range of -150 C to 150 C, at selected values of B(sub peak). Frequency resolved characteristics are given over the range of 50 kHz to 1 MHz, but at B(sub peak) = 0.1 T and 50 C only. Basic exciting winding current and induced voltage data were taken on bare toroidal cores, in a standard type measurement setup. A linear permeability model, which represents the core by a parallel L-R circuit, is used to interpret and present the magnetization characteristics and several figures of merit applicable to inductor materials are reviewed. The 100 kHz permeability thus derived decreases with increasing temperature for the Fe-based, nanocrystalline material, but increases roughly linearly with temperature for the two Co-based materials, as long as B(sub peak) is sufficiently low to avoid saturation effects. Due to the high permeabilities, rather low values of the 'quality factor' Q, from about 20 to below unity, were obtained over the frequency range of 50 kHz to 1 MHz (50 C, B(sub peak) = 0.1 T). Therefore these cores must be gapped in order to make up high Q or high current inductors. However, being rugged, low core loss materials with flat B-H loop characteristics, they may provide new solutions to specialty inductor applications.

  14. Regulation of Silk Material Structure by Temperature-Controlled Water Vapor Annealing

    PubMed Central

    Hu, Xiao; Shmelev, Karen; Sun, Lin; Gil, Eun-Seok; Park, Sang-Hyug; Cebe, Peggy; Kaplan, David L.

    2011-01-01

    We present a simple and effective method to obtain refined control of the molecular structure of silk biomaterials through physical temperature-controlled water vapor annealing (TCWVA). The silk materials can be prepared with control of crystallinity, from a low content using conditions at 4°C (alpha-helix dominated silk I structure), to highest content of ~60% crystallinity at 100°C (beta-sheet dominated silk II structure). This new physical approach covers the range of structures previously reported to govern crystallization during the fabrication of silk materials, yet offers a simpler, green chemistry, approach with tight control of reproducibility. The transition kinetics, thermal, mechanical, and biodegradation properties of the silk films prepared at different temperatures were investigated and compared by Fourier transform infrared spectroscopy (FTIR), differential scanning calorimetry (DSC), uniaxial tensile studies, and enzymatic degradation studies. The results revealed that this new physical processing method accurately controls structure, in turn providing control of mechanical properties, thermal stability, enzyme degradation rate, and human mesenchymal stem cell interactions. The mechanistic basis for the control is through the temperature controlled regulation of water vapor, to control crystallization. Control of silk structure via TCWVA represents a significant improvement in the fabrication of silk-based biomaterials, where control of structure-property relationships is key to regulating material properties. This new approach to control crystallization also provides an entirely new green approach, avoiding common methods which use organic solvents (methanol, ethanol) or organic acids. The method described here for silk proteins would also be universal for many other structural proteins (and likely other biopolymers), where water controls chain interactions related to material properties. PMID:21425769

  15. A re-evaluation of geological timescale benchmarks and temperature sensitivity of fission-track annealing in apatites

    NASA Astrophysics Data System (ADS)

    Luijendijk, Elco; Andriessen, Paul

    2016-04-01

    Current models of the temperature sensitivity of fission track annealing in apatites have been calibrated using fission track data from boreholes, with the assumption that these samples are currently at maximum burial depth and temperatures. The most detailed data-set comes from boreholes located in the Otway basin, Australia. However, several lines of evidence suggest that these samples are not at their maximum burial depth and temperature and consequently the cooling temperature of the apatite fission track thermochronometer would then be higher than previously assumed. Significant late Cenozoic exhumation in the Otway Basin was suggested by earlier studies that document a major late-Miocene erosional unconformity, folding and trusting of underlying sediments and elevated strandlines along the coast. In addition, anomalously young apatite (U-Th)/He ages in several boreholes in the basin suggest that the basin's sediments have been exhumed and cooled in the late Cenozoic. We explore the effects of late Cenozoic exhumation on fission track data in the Otway basin using a 1D model of burial and thermal history. We show that simulating several 100s of meters of exhumation in the basin results in significant misfit between current annealing models and observed fission track data. The additional exhumation reconciles the Otway basin data with a second detailed fission track dataset from boreholes in Southern Texas with a well-constrained thermal and burial history. We combine vitrinite reflectance data and U-Th/He data from the Otway basin to recalibrate the burial history of the Otway basin. Subsequently we combine the new thermal history of the Otway basin with the Southern Texas dataset to recalibrate the fission track annealing algorithm. The results suggest that fission-track annealing in apatites is underestimated by approximately 20°C by current annealing models, with significant implications for studies that use apatite fission track thermochronology to

  16. Negative Temperature Dependence of Recrystallized Grain Size: Formulation and Experimental Confirmation on Copper

    PubMed Central

    Elmasry, Mohamed; Liu, Fan; Jiang, Yao; Mao, Ze Ning; Liu, Ying; Wang, Jing Tao

    2017-01-01

    The catalyzing effect on nucleation of recrystallization from existing grains resulting from previous lower temperature deformation is analyzed, analogous to the size effect of foreign nucleus in heterogeneous nucleation. Analytical formulation of the effective nucleation site for recrystallization leads to a negative temperature dependence of recrystallized grain size of metals. Non-isochronal annealing—where annealing time is set just enough for the completion of recrystallization at different temperatures—is conducted on pure copper after severe plastic deformation. More homogeneous and smaller grains are obtained at higher annealing temperature. The good fit between analytical and experimental results unveils the intrinsic feature of this negative temperature dependence of recrystallized grain size. PMID:28772676

  17. Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

    NASA Astrophysics Data System (ADS)

    Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rahman, S. A.; Rusop, Mohamad

    2016-07-01

    This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which its resistivity is 5.36 × 104 Ωcm-1. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

  18. Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

    SciTech Connect

    Nasir, M. F. Zainol, M. N. Hannas, M.; Mamat, M. H. Rusop, Mohamad; Rahman, S. A.

    2016-07-06

    This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which its resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  19. Effects of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Li, Jitao; Yang, Dinyu; Zhu, Xinghua; Sun, Hui; Gao, Xiuying; Wangyang, Peihua; Tian, Haibo

    ZnO thin films have been prepared by sol-gel method in this paper. Zinc acetate, ethanol and mono-ethanolamine (MEA) were used as a metal precursor, solvent and stabilizer, respectively. The structural and optical properties of ZnO thin films were investigated and found to be strongly dependent on the annealing temperature. X-ray diffraction patterns revealed that as the annealing temperature increased, the crystalline quality of the samples became better. The atomic force microscope images of the samples show larger and compact grains at higher heat-treating temperature. The ultraviolet-visible transmittance spectra indicated that as the temperature increased, the transmittance improved and the energy gap became larger (from 3.11eV at 400∘C to 3.22eV at 500∘C). The photoluminescence spectra presented a variety of emission peaks, two strong peaks at 390nm and 469nm, respectively, from the intrinsic emission and point defects, and the intensity of these peaks decreased with the increase of temperature.

  20. Influence of high-temperature annealing on the orientation of the unipolarity vector in lead zirconate titanate thin films

    NASA Astrophysics Data System (ADS)

    Kanareikin, A. G.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.; Sergienko, A. Yu.; Sergeeva, O. N.

    2016-11-01

    The factors responsible for the change in the orientation of the natural unipolarity vector due to heating to the Curie temperature of a Pt/PZT/Pt thin-film capacitor (PZT—lead zirconate titanate) formed on a TiO2/SiO2/Si substrate have been considered. Lead zirconate titanate thin layers containing a small excess of lead oxide have been formed ex situ using high-frequency magnetron sputtering with a variation in the annealing temperature (crystallization of the perovskite phase) in the range from 580 to 650°C. It has been assumed that the reorientation of the unipolarity vector in the PZT layer is caused by the change in the mechanism of crystallization of the perovskite phase with an increase in the annealing temperature.

  1. Investigation of on-chip high temperature annealing of PMOS dosimeters

    SciTech Connect

    Kelleher, A.; Lane, W.; Adams, L.K.

    1996-06-01

    Radiation sensitive pMOS dosimeters can measure only to a maximum dose which is determined by the type, sensitivity and irradiation conditions of the RADFET. On reaching the maximum dose, the dosimeters normally have to be replaced. The aim of this work is to study the feasibility of using on-chip poly-resistor heaters to anneal the dosimeters back to their pre-irradiation threshold voltage. This study shows that, on-chip heating is a viable option to achieve post-irradiation annealing, and that the fading characteristics obtained agree with those of oven annealing from a previous study which was carried out on the NMRC RADFETs.

  2. Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

    PubMed

    Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

    2014-06-01

    Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

  3. Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures

    NASA Astrophysics Data System (ADS)

    Rajagopal Reddy, V.; Sri Silpa, D.; Yun, Hyung-Joong; Choi, Chel-Jong

    2014-07-01

    The electrical and structural properties of a fabricated W/p-InP Schottky barrier diode (SBD) have been investigated as a function of annealing temperature. The W/p-InP SBD exhibits good rectification behavior. The barrier height (BH) and ideality factor of the W/p-InP SBD are determined to be 0.82 eV (I-V)/0.98 eV (C-V) and 1.34, respectively. However, the BH is increases to 0.87 eV (I-V)/1.08 eV (C-V) after annealing at 300 °C. When the SBD is annealed at 400 °C, the BH decreases to 0.74 eV (I-V)/0.86 eV (C-V) and the ideality factor increases to 1.45. Results indicate that a maximum BH is obtained on the W/p-InP SBD at 300 °C. Norde method is also employed to determine BHs of W/p-InP SBD which are in good agreement with those estimated by the I-V method. Further, Cheung method is used to estimate the series resistance of the W/p-InP SBD, and the consistency is checked using the Norde method. Besides, the energy distribution of interface state density is determined from the forward bias I-V data at different annealing temperatures. Auger electron spectroscopy and X-ray diffraction studies revealed that the formation of W-P interfacial phases at the W/p-InP interface may be the cause for the increase of BH upon annealing at 300 °C. AFM results indicated that the overall surface morphology of the W/p-InP SBD did not change significantly at elevated temperatures.

  4. Effect of Annealing Temperature on Bi3.25La0.75Ti3O12 Powders for Humidity Sensing Properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; He, Jinping; Yuan, Mengjiao; Jiang, Bin; Li, Peiwen; Tong, Yexing; Zheng, Xuejun

    2017-01-01

    Bi3.25La0.75Ti3O12 (BLT) powders have been synthesized via the metal-organic decomposition method with annealing of the BLT precursor solution at 350°C, 450°C, 550°C, 650°C or 750°C. The crystalline structure and morphology of the BLT powders were characterized by x-ray diffraction analysis, field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, and specific surface and pore size analyses. The humidity sensing properties of the BLT powders annealed at the five temperatures were investigated to determine the effect of annealing temperature. The annealing temperature strongly influenced the grain size, pore size distribution, and specific surface area of the BLT powders, being largely correlated to their humidity sensing properties. The specific surface area of the BLT powder annealed at 550°C was 68.2 m2/g, much larger than for the other annealing temperatures, and the majority of the pores in the BLT powder annealed at 550°C were mesoporous, significantly increasing the adsorption efficiency of water vapor onto the surface of the material. The impedance of the BLT powder annealed at 550°C varied by more than five orders of magnitude over the whole humidity range at working frequency of 100 Hz, being approximately five times greater than for BLT powders annealed at other temperatures. The response time was about 8 s, with maximum hysteresis of around 3% relative humidity. The BLT powder annealed at 550°C exhibited the best humidity sensing properties compared with the other annealing temperatures. We expect that these results will offer useful guidelines for preparation of humidity sensing materials.

  5. Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Makino, Shigeki; Miyamoto, Tomoyuki; Kageyama, Takeo; Ikenaga, Yoshihiko; Arai, Masakazu; Koyama, Fumio; Iga, Kenichi

    2001-11-01

    The thermal annealing process is effective to improve the optical quality of GaInNAs/GaAs quantum wells (QWs). However, a blue shift of the emission peak wavelength occurs during the annealing and it is strongly related to the annealing condition and the composition of GaInNAs/GaAs QWs. In this study, we investigated the dependences of both the annealing condition and the composition on the lasing characteristics of 1.3 μm GaInNAs/GaAs QW lasers.

  6. Temperature Dependence of Factors Controlling Isoprene Emissions

    NASA Technical Reports Server (NTRS)

    Duncan, Bryan N.; Yoshida, Yasuko; Damon, Megan R.; Douglass, Anne R.; Witte, Jacquelyn C.

    2009-01-01

    We investigated the relationship of variability in the formaldehyde (HCHO) columns measured by the Aura Ozone Monitoring Instrument (OMI) to isoprene emissions in the southeastern United States for 2005-2007. The data show that the inferred, regional-average isoprene emissions varied by about 22% during summer and are well correlated with temperature, which is known to influence emissions. Part of the correlation with temperature is likely associated with other causal factors that are temperature-dependent. We show that the variations in HCHO are convolved with the temperature dependence of surface ozone, which influences isoprene emissions, and the dependence of the HCHO column to mixed layer height as OMI's sensitivity to HCHO increases with altitude. Furthermore, we show that while there is an association of drought with the variation in HCHO, drought in the southeastern U.S. is convolved with temperature.

  7. Temperature Dependence of Factors Controlling Isoprene Emissions

    NASA Technical Reports Server (NTRS)

    Duncan, Bryan N.; Yoshida, Yasuko; Damon, Megan R.; Douglass, Anne R.; Witte, Jacquelyn C.

    2009-01-01

    We investigated the relationship of variability in the formaldehyde (HCHO) columns measured by the Aura Ozone Monitoring Instrument (OMI) to isoprene emissions in the southeastern United States for 2005-2007. The data show that the inferred, regional-average isoprene emissions varied by about 22% during summer and are well correlated with temperature, which is known to influence emissions. Part of the correlation with temperature is likely associated with other causal factors that are temperature-dependent. We show that the variations in HCHO are convolved with the temperature dependence of surface ozone, which influences isoprene emissions, and the dependence of the HCHO column to mixed layer height as OMI's sensitivity to HCHO increases with altitude. Furthermore, we show that while there is an association of drought with the variation in HCHO, drought in the southeastern U.S. is convolved with temperature.

  8. Temperature dependence of Vortex Charges in High Temperature Superconductors

    NASA Astrophysics Data System (ADS)

    Ting, C. S.; Chen, Yan; Wang, Z. D.

    2003-03-01

    By considering of competition between antiferromagnetic (AF) and d-wave superconductivity orders, the temperature dependence of the vortex charge in high Tc superconductors is investigated by solving self-consistently the Bogoliubov-de Gennes equations. The magnitude of induced antiferromagnetic order inside the vortex core is temperature dependent. The vortex charge is always negative when a sufficient strength of AF order presents at low temperature while the AF order may be suppressed at higher temperature and there the vortex charge becomes positive. A first order like transition from negative to the positive vortex charges occurs at certain temperature TN which is very close to the temperature for the disappearence of the local AF order. The vortex charges at various doping levels will also going to be examined. We show that the temperature dependence of the vortex core radius with induced AF order exhibits a weak Kramer-Pesch effect. The local density of states spectrum has a broad peak pattern at higher temperature while it exhibits two splitting peak at lower temperature. This temperature evolution may be detected by the future scanning-tunnel-microscope experiment. In addition, the effect of the vortex charge on the mixed state Hall effect will be discussed.

  9. Detecting and resolving position-dependent temperature effects in real-time quantitative polymerase chain reaction.

    PubMed

    von Kanel, Thomas; Gerber, Dominik; Wittwer, Carl T; Hermann, Mark; Gallati, Sabina

    2011-12-15

    Real-time quantitative polymerase chain reaction (qPCR) depends on precise temperature control of the sample during cycling. In the current study, we investigated how temperature variation in plate-based qPCR instruments influences qPCR results. Temperature variation was measured by amplicon melting analysis as a convenient means to assess well-to-well differences. Multiple technical replicates of several SYBR Green I-based qPCR assays allowed correlation of relative well temperature to quantification cycle. We found that inadequate template denaturation results in an inverse correlation and requires increasing the denaturation temperature, adding a DNA destabilizing agent, or pretreating with a restriction enzyme. In contrast, inadequate primer annealing results in a direct correlation and requires lowering the annealing temperature. Significant correlations were found in 18 of 25 assays. The critical nature of temperature-dependent effects was shown in a blinded study of 29 patients for the diagnosis of Prader-Willy and Angelman syndromes, where eight diagnoses were incorrect unless temperature-dependent effects were controlled. A method to detect temperature-dependent effects by pairwise comparisons of replicates in routine experiments is presented and applied. Systematic temperature errors in qPCR instruments can be recognized and their effects eliminated when high precision is required in quantitative genetic diagnostics and critical complementary DNA analyses. Copyright © 2011 Elsevier Inc. All rights reserved.

  10. Theoretical temperature dependence of solar cell parameters

    NASA Technical Reports Server (NTRS)

    Fan, John C. C.

    1986-01-01

    A simple formulation has been derived for the temperature dependence of cell parameters for any solar cell material. Detailed calculations have been performed for high-quality monocrystalline GaAs, Si and Ge cells. Preliminary experimental data for GaAs and Si cells are close to the calculated values. In general, the higher the energy gap of a material, the small is the temperature dependence of its solar cell parameters.

  11. Effect of annealing temperature on structure and electrical properties of topological insulator Bi{sub 2}Te{sub 3}

    SciTech Connect

    Urkude, R. R. Palikundwar, U. A.

    2016-05-06

    Bi{sub 2}Te{sub 3} samples were prepared by precipitation method. The samples were annealed in evacuated quartz tubes and were treated at different temperature for different duration of time. Effects of annealing temperature and time on the structure of Bi{sub 2}Te{sub 3} were studied in detail. The Bi{sub 2}Te{sub 3} samples annealed at temperature 300°C and 450°C for 48Hrs, 72Hrs and 96Hrs were selected for the present study. The structure of Bi{sub 2}Te{sub 3} and related phases were investigated by the X-ray powder diffraction technique. Morphology and chemical compositions of the samples were investigated by scanning electron microscope and energy dispersive X-ray spectroscopy respectively. All the samples were indexed in rhombohedral crystal structure, with a space group R-3m. The structure consists of repeated quintuple layers of atoms, Te2-Bi-Te1-Bi-Te2 stacking along the z-axis of the unit cell. Electrical properties of the sample annealed at 300°C for 96Hrs was evaluated by measurements of the electrical resistivity and magnetoresistance. The magnetoresistance data at low temperature (1.5 to 50 K) were analyzed to investigate weak antilocalization (WAL) effect. MR data followed the Hikami–Larkin–Nagaoka (HLN) equation with a fit parameter α close to −1 as expected for topological surface states at 1.5 K, but for other temperatures the small oscillations were observed which may be due to the phenomena like Shubnikov-de Hass effect.

  12. Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO₂ superlattices

    SciTech Connect

    López-Vidrier, J. Hernández, S.; López-Conesa, L.; Peiró, F.; Garrido, B.; Hiller, D.; Gutsch, S.; Zacharias, M.; Estradé, S.

    2014-10-07

    The effect of the annealing temperature and the SiO₂ barrier thickness of silicon nanocrystal (NC)/SiO₂ superlattices (SLs) on their structural and optical properties is investigated. Energy-filtered transmission electron microscopy (TEM) revealed that the SL structure is maintained for annealing temperatures up to 1150 °C, with no variation on the nanostructure morphology for different SiO₂ barrier thicknesses. Nevertheless, annealing temperatures as high as 1250 °C promote diffusion of Si atoms into the SiO₂ barrier layers, which produces larger Si NCs and the loss of the NC size control expected from the SL approach. Complementary Raman scattering measurements corroborated these results for all the SiO₂ and Si-rich oxynitride layer thicknesses. In addition, we observed an increasing crystalline fraction up to 1250 °C, which is related to a decreasing contribution of the suboxide transition layer between Si NCs and the SiO₂ matrix due to the formation of larger NCs. Finally, photoluminescence measurements revealed that the emission of the superlattices exhibits a Gaussian-like lineshape with a maximum intensity after annealing at 1150 °C, indicating a high crystalline degree in good agreement with Raman results. Samples submitted to higher annealing temperatures display a progressive emission broadening, together with an increase in the central emission wavelength. Both effects are related to a progressive broadening of the size distribution with a larger mean size, in agreement with TEM observations. On the other hand, whereas the morphology of the Si NCs is unaffected by the SiO₂ barrier thickness, the emission properties are slightly modified. These observed modifications in the emission lineshape allow monitoring the precipitation process of Si NCs in a direct non-destructive way. All these experimental results evidence that an annealing temperature of 1150 °C and 1-nm SiO₂ barrier can be reached whilst preserving the SL structure, being

  13. Effect of annealing temperature on the structural and optical properties of CeO2:Ni thin films

    NASA Astrophysics Data System (ADS)

    Murugan, R.; Vijayaprasath, G.; Sakthivel, P.; Mahalingam, T.; Ravi, G.

    2016-05-01

    High quality Ni-doped CeO2 (CeO2:Ni) thin films were deposited on glass substrates at room temperature by using radio frequency magnetron sputtering. The effect of annealing temperature on structural and optical properties of the CeO2:Ni films was investigated. The structural, optical and vibrational properties of the films were determined using X-ray diffraction (XRD), photoluminescence spectrometer (PL) and Raman spectrometer. It was found that the as-deposited film has a fluorite cubic structure. By increasing annealing temperature from 100°C to 300°C, the crystalline quality of the thin films could be improved. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton, defect related emissions respectively. The micro-Raman results show the characteristic peak of CeO2 F2g at 465 cm-1 and 2L0 at 1142 cm-1. Defect peaks like D and 0 bands were observed at 641 cm-1 and 548 cm-1 respectively. It is found from the spectra that the peak intensity of the films increased with increase of annealing temperature.

  14. E. coli survival in waters: temperature dependence

    USDA-ARS?s Scientific Manuscript database

    Knowing the survival rates of water-borne Escherichia coli is important for evaluating microbial contamination and in making appropriate management decisions. E. coli survival rates are dependent on temperature; this dependency is routinely expressed using an analog of the Q10 model. This suggestion...

  15. Escherichia coli survival in waters: Temperature dependence

    EPA Science Inventory

    Knowing the survival rates of water-borne Escherichia coli is important in evaluating microbial contamination and making appropriate management decisions. E. coli survival rates are dependent on temperature, a dependency that is routinely expressed using an analogue of the Q10 mo...

  16. Escherichia coli survival in waters: Temperature dependence

    EPA Science Inventory

    Knowing the survival rates of water-borne Escherichia coli is important in evaluating microbial contamination and making appropriate management decisions. E. coli survival rates are dependent on temperature, a dependency that is routinely expressed using an analogue of the Q10 mo...

  17. Water Temperature Dependence of Single Bubble Sonoluminescence

    SciTech Connect

    Hilgenfeldt, S.; Lohse, D.; Moss, W.C.

    1998-02-01

    The strong dependence of the intensity of single bubble sonoluminescence (SBSL) on water temperature observed in experiment can be accounted for by the temperature dependence of the material constants of water, most essentially of the viscosity, of the argon solubility in water, and of the vapor pressure. The strong increase of light emission at low water temperatures is due to the possibility of applying higher driving pressures, caused by increased bubble stability. The presented calculations combine the Rayleigh-Plesset equation based hydrodynamical/chemical approach to SBSL and full gas dynamical calculations of the bubble{close_quote}s interior. {copyright} {ital 1998} {ital The American Physical Society}

  18. Temperature dependent dissipation in magnetic nanoparticles

    NASA Astrophysics Data System (ADS)

    Regmi, R.; Naik, A.; Thakur, J. S.; Vaishnava, P. P.; Lawes, G.

    2014-05-01

    We parameterized the temperature dependent magnetic dissipation of iron oxide nanoparticles fixed in a frozen aqueous solution in an ac magnetic field. The magnetic power dissipated can be modeled by considering only Neel relaxation. This dissipation increased monotonically with temperature, increasing by approximately 50% between -40 °C and -10 °C. These experimental results provide quantitative confirmation for the Neel model of magnetic dissipative heating for nanoparticles rigidly confined in a solid matrix. We also find substantial temperature dependence in the magnetic dissipation of nanoparticles suspended in a liquid, which has important consequences for potential applications of magnetic nanoparticles for hyperthermia.

  19. Through-vial impedance spectroscopy of the mechanisms of annealing in the freeze-drying of maltodextrin: the impact of annealing hold time and temperature on the primary drying rate.

    PubMed

    Smith, Geoff; Arshad, Muhammad Sohail; Polygalov, Eugene; Ermolina, Irina

    2014-06-01

    The study aims to investigate the impact of annealing hold time and temperature on the primary drying rate/duration of a 10% (w/v) solution of maltodextrin with an emphasis on how the mechanisms of annealing might be understood from the in-vial measurements of the ice crystal growth and the glass transition. The electrical impedance of the solution within a modified glass vial was recorded between 10 and 10(6) Hz during freeze-drying cycles with varying annealing hold times (1-5 h) and temperatures. Primary drying times decreased by 7%, 27% and 34% (1.1, 4.3 and 5.5 h) with the inclusion of an annealing step at temperatures of -15°C, -10°C and -5°C, respectively. The glass transition was recorded at approximately -16°C during the re-heating and re-cooling steps, which is close to the glass transition (Tg ') reported for 10% (w/v) maltodextrin and therefore indicates that a maximum freeze concentration (∼86%, w/w, from the Gordon-Taylor equation) was achieved during first freezing, with no further ice being formed on annealing. This observation, coupled to the decrease in electrical resistance that was observed during the annealing hold time, suggests that the reduction in the drying time was because of improved connectivity of ice crystals because of Ostwald ripening rather than devitrification.

  20. Effect of aging heat time and annealing temperature on the properties of nanocrystalline tin dioxide thin films

    NASA Astrophysics Data System (ADS)

    Kadhim, Imad H.; Abu Hassan, H.

    2017-04-01

    Nanocrystalline tin dioxide (SnO2) thin films have been successfully prepared by sol-gel spin-coating technique on p-type Si (100) substrates. A stable solution was prepared by mixing tin(II) chloride dihydrate, pure ethanol, and glycerin. Temperature affects the properties of SnO2 thin films, particularly the crystallite size where the crystallization of SnO2 with tetragonal rutile structure is achieved when thin films that prepared under different aging heat times are annealed at 400∘C. By increasing aging heat time in the presence of annealing temperatures the FESEM images indicated that the thickness of the fabricated film was directly proportional to solution viscosity, increasing from approximately 380 nm to 744 nm, as well as the crystallization of the thin films improved and reduced defects.

  1. Effect of low-temperature post-growth annealing on anisotropic strain in epitaxial Fe layers deposited on GaAs(001)

    SciTech Connect

    Tholapi, R. Liefeith, L.; Ekindorf, G.; Slobodskyy, T.; Hansen, W.; Perumal, K.

    2016-06-28

    We study the effect of low-temperature post growth annealing on the Fe layer in an epitaxial Fe/GaAs(001) heterojunction. High resolution X-ray diffraction and X-ray reflectivity were used to probe the Fe layer before and after annealing. No change in morphological features like annealing induced intermixing and thickness variation of the Fe layer are observed. However, annealing leads to increase in the compressive strain and improves isotropy of the ferromagnetic layer as revealed by measuring both lateral and out-of-plane lattice components.

  2. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    SciTech Connect

    Yastrubchak, O. Gluba, L.; Żuk, J.; Wosinski, T. Andrearczyk, T.; Domagala, J. Z.; Sadowski, J.

    2014-01-07

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  3. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    NASA Astrophysics Data System (ADS)

    Yastrubchak, O.; Wosinski, T.; Gluba, L.; Andrearczyk, T.; Domagala, J. Z.; Żuk, J.; Sadowski, J.

    2014-01-01

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  4. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    SciTech Connect

    Pastor, D.; Cusco, R.; Artus, L.; Gonzalez-Diaz, G.; Iborra, E.; Jimenez, J.; Peiro, F.; Calleja, E.

    2006-08-15

    We have studied the effects of rapid thermal annealing at 1300 deg.C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si{sub 3}N{sub 4} crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3 nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

  5. Liquid-filled ionization chamber temperature dependence

    NASA Astrophysics Data System (ADS)

    Franco, L.; Gómez, F.; Iglesias, A.; Pardo, J.; Pazos, A.; Pena, J.; Zapata, M.

    2006-05-01

    Temperature and pressure corrections of the read-out signal of ionization chambers have a crucial importance in order to perform high-precision absolute dose measurements. In the present work the temperature and pressure dependences of a sealed liquid isooctane filled ionization chamber (previously developed by the authors) for radiotherapy applications have been studied. We have analyzed the thermal response of the liquid ionization chamber in a ˜20C interval around room temperature. The temperature dependence of the signal can be considered linear, with a slope that depends on the chamber collection electric field. For example, a relative signal slope of 0.27×10-2 K-1 for an operation electric field of 1.67×106 V m-1 has been measured in our detector. On the other hand, ambient pressure dependence has been found negligible, as expected for liquid-filled chambers. The thermal dependence of the liquid ionization chamber signal can be parametrized within the Onsager theory on initial recombination. Considering that changes with temperature of the detector response are due to variations in the free ion yield, a parametrization of this dependence has been obtained. There is a good agreement between the experimental data and the theoretical model from the Onsager framework.

  6. Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature.

    PubMed

    Hsu, Ya-Chu; Hung, Yu-Chen; Wang, Chiu-Yen

    2017-09-15

    High uniformity Au-catalyzed indium selenide (In2Se3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In2Se3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In2Se3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In2Se3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In2Se3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In2Se3 vapor and produce the high uniformity In2Se3 nanowires. The in situ annealing TEM is used to realize the effect of heating rate on Au nanoparticle

  7. Temperature dependence of sapphire fiber Raman scattering

    SciTech Connect

    Liu, Bo; Yu, Zhihao; Tian, Zhipeng; Homa, Daniel; Hill, Cary; Wang, Anbo; Pickrell, Gary

    2015-04-27

    Anti-Stokes Raman scattering in sapphire fiber has been observed for the first time. Temperature dependence of Raman peaks’ intensity, frequency shift, and linewidth were also measured. Three anti-Stokes Raman peaks were observed at temperatures higher than 300°C in a 0.72-m-long sapphire fiber excited by a second-harmonic Nd YAG laser. The intensity of anti-Stokes peaks are comparable to that of Stokes peaks when the temperature increases to 1033°C. We foresee the combination of sapphire fiber Stokes and anti-Stokes measurement in use as a mechanism for ultrahigh temperature sensing.

  8. Temperature dependent conformational change of dengue virus.

    PubMed

    Zhang, Xinzheng; Sun, Lei; Rossmann, Michael G

    2015-06-01

    Dengue virus is the causative agent of dengue virus fever. It infects about 400 million people per year and leads to about 21,000 deaths annually. There is available neither a fully successful vaccine nor a successful drug therapy. Some dengue virus serotypes undergo a temperature dependent conformational change from a 'smooth' form at lower temperatures to a 'bumpy' form at temperatures approaching 37°C, the human body temperature. The bumpy structure is less stable and is probably an intermediate in the formation of a fusogenic virus particle. Copyright © 2015 Elsevier B.V. All rights reserved.

  9. FT-IR analysis of high temperature annealing effects in a-SiC:H thin films

    NASA Astrophysics Data System (ADS)

    Frischmuth, Tobias; Schneider, Michael; Grille, Thomas; Schmid, U.

    2017-06-01

    Hydrogenated amorphous SiC (a-SiC:H) is an attractive material for MEMS applications where high robustness or operation in harsh environments is targeted. In previous publications, it was demonstrated, that the properties of a-SiC:H thin films can be tailored over a wide range by changing the auxiliary table excitation power of a dual plasma source deposition process using an inductively coupled plasma-enhanced chemical vapour deposition system. In this work, the annealing behavior of dual plasma source deposited a-SiC:H thin films under argon atmosphere is investigated by using Fourier transform infrared (FT-IR) spectroscopy for chemical analysis. All investigated layers show a decrease of hydrogen containing bonds (X-Hx) and an increase of Si-C bonds with increasing annealing temperature in the FT-IR spectrum. This behaviour is directly linked to the effusion of hydrogen from the thin films at elevated temperatures. In addition, films deposited at higher auxiliary plasma power show more X-Hx and less Si-C bonds, indicating a higher hydrogen amount in those films. All layers shrink with increasing annealing temperature due to the effusion of hydrogen with a stronger shrink at higher PT values caused by the increased hydrogen amount. This shrink also leads to a densification of the thin films.

  10. The effect of high-temperature annealing on optical properties of porous anodic alumina formed in oxalic acid.

    PubMed

    Li, Zhaojian; Huang, Kelong

    2007-01-01

    Photoluminescence (PL) of anodic alumina membranes (AAMs) with ordered nanopore arrays fabricated in oxalic acid has been investigated under different annealing temperatures. X-ray diffraction reveals the structural transition from the amorphous state to crystallization. PL measurements show that a blue PL band occurs in the wavelength range 300-600 nm. The differential thermal analysis (DTA) and thermogravimetric analysis (TG) results revealed plentiful oxalic ions incorporated into the prepared AAMs. The PL band of AAMs could be attributed to the co-actions of the oxygen vacancies (F(+) and F centres) and the luminescent centres transformed from oxalic impurities. With the increase of the annealing temperature, the intensities of PL increase first, and at 500 degrees C reach a maximum value, then decrease. The PL phenomenon is intimately related to the temperature-induced structural transitions. There are three optical centres in the annealed AAMs; the first is originates from the F centres, the second is correlated with F(+) centres and the third is associated with the oxalic impurities incorporated in the AAMs. (c) 2007 John Wiley & Sons, Ltd.

  11. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    SciTech Connect

    Saxena, Nupur Kumar, Pragati; Gupta, Vinay

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  12. The Role of Annealing Temperature in Photocatalytic Performance of Fe3O4/SnO2 nanocomposites

    NASA Astrophysics Data System (ADS)

    Paramarta, Valentinus; Taufik, Ardiansyah; Saleh, Rosari

    2017-05-01

    In this work, SnO2 nanoparticles with the variation of annealing temperature (400°C-800°C) were used as photocatalyst for remove organic dye from the aqueous solution. SnO2 nanoparticles were synthesized using sol-gel method. For enhancing the stability and the photocatalytic activity of the samples, magnetite materials (Fe3O4) were combined with SnO2 nanoparticles. The prepared samples characterized by X-ray Diffraction (XRD). The X-ray diffraction shows tetragonal structure of SnO2 and cubic spinel of Fe3O4 as the components of the prepared nanocomposites. The photocatalytic activity of the samples was studied using Methylene Blue (MB) as a model organic pollutant. The photocatalytic degradation of MB by SnO2 and Fe3O4 nanocomposites under UV light irradiation was examined by varying the operational parameters such as catalyst dosage and scavengers. Among the variation annealing temperature of SnO2 nanoparticles, the 700°C annealing temperature of SnO2 showed the highest photocatalytic activity. The repeatability of photocatalytic activity was also tested.

  13. Selective synthesis of boron nitride nanotubes by self-propagation high-temperature synthesis and annealing process

    SciTech Connect

    Wang Jilin; Zhang Laiping; Zhao Guowei; Gu Yunle; Zhang Zhanhui; Zhang Fang; Wang Weimin

    2011-09-15

    Four types of BN nanotubes are selectively synthesized by annealing porous precursor in flowing NH{sub 3} and NH{sub 3}/H{sub 2} atmosphere at temperature ranging from 1000 to 1200 deg. C in a vertical furnace. The as-synthesized BN nanotubes, including cylinder, wave-like, bamboo-like and bubble-chain, are characterized by XRD, FTIR, Raman, SEM, TEM and HRTEM. Three phenomenological growth models are proposed to interpret growth scenario and structure features of the four types of BN nanotubes. Selectivity of nanotubes formation is estimated as approximately 80-95%. The precursor containing B, Mg, Fe and O prepared by self-propagation high-temperature synthesis (SHS) method plays a key role in selective synthesis of the as-synthesized BN nanotubes. Chemical reactions are also discussed. - Graphical Abstract: Four types of BN nanotubes are selectively synthesized by annealing porous precursor prepared by self-propagation high-temperature synthesis. Three phenomenological growth models are proposed to reveal growth scenario and characteristics of the as-synthesized BN nanotubes. Highlights: > Four types of BN nanotubes are selectively synthesized by annealing porous precursor. > Selectivity of BN nanotubes formation is estimated as approximately 80-95 wt%. > Three growth models are proposed to interpret growth of the as-synthesized BN nanotubes. > The precursor prepared by SHS method plays a key role in selective synthesis process.

  14. Carbon films embedded by nickel nanoparticles: fluctuation in hopping rate and variable-range hopping with respect to annealing temperature

    NASA Astrophysics Data System (ADS)

    Dalouji, Vali; Elahi, Smohammad; Solaymani, Shahram; Ghaderi, Atefeh; Elahi, Hossein

    2016-05-01

    In this work, the electrical properties of carbon-nickel films annealed at different temperatures (573, 773, 1073 and 1273 K) in the temperature range 15-300 K were investigated. The films were grown by radio frequency magnetron co-sputtering on quartz substrates at room temperature. The multiphonon hopping conduction mechanism is found to dominate the electrical transport in the temperature range 150-300 K. It can be seen that the room-temperature hopping rate (ΓRT) at 773 K has maximum value of 56.8 × 105 s-1. Our results of conductivity measurements at high temperature are in good agreement with strong carrier-lattice coupling model; on the other hand, the conductivity in the range 15-50 K is well described in terms of variable-range hopping (VRH) conduction mechanism. The localized state density around Fermi level N( E F) and the average hopping energy W hop at low temperature for the films annealed at 773 K have maximum value of 2.23 × 1023 (cm-3 eV-1) and minimum value of 9.74 × 10-4 eV, respectively.

  15. Effects of dip-coating speed and annealing temperature on structural, morphological and optical properties of sol-gel nano-structured TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Touam, Tahar; Atoui, Mohamed; Hadjoub, Ilhem; Chelouche, Azeddine; Boudine, Boubekeur; Fischer, Alexis; Boudrioua, Azzedine; Doghmane, Abdellaziz

    2014-09-01

    We reported material characterization of the nano-structured TiO2 thin films prepared by the sol-gel dip-coating process on glass substrates. The dependence of the structural, morphological and optical properties of the synthesized films on the fabrication parameters such as withdrawal velocity and annealing temperature were investigated by the techniques of X-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-visible spectrophotometry. The results indicate that for the TiO2 films annealed at 500 °C there exhibits (1 0 1) XRD peak corresponding to the anatase phase of TiO2. The latter is consistent with the recorded Raman signal observed at 142 cm-1 (Eg mode) and 391 cm-1 (B1g mode), respectively. From the analyses made on the SEM micrographs and AFM images, it was revealed that the morphology and surface roughness of the thin films would depend on the withdrawal speed and the heat treatment temperature. The UV-visible spectroscopy analyses show that all the films were transparent in the visible region with an average transmittance of more than 70%. With an increase on the dip-coating speed from 1 cm/min to 3 cm/min, we observed a spectral red shift of the absorption edge from 3.76 eV to 3.71 eV, indicating a decrease in the bandgap energy (Eg) of the films.

  16. Dose and doping dependence of damage annealing in Fe MeV implanted InP

    SciTech Connect

    Carnera, A.; Fraboni, B.; Gasparotto, A. |; Priolo, F. |; Camporese, A.; Rossetto, G.; Frigeri, C.; Cassa, A.

    1996-12-31

    High energy (2 MeV) ion implantation of Fe in InP has been investigated by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and secondary ions mass spectrometry (SIMS). The implanted doses ranged between 5 {times} 10{sup 13} and 5 {times} 10{sup 14} at/cm{sup 2}. Annealing in the 650--800 C range was performed and the primary as well as secondary damage evolution has been studied. The correlations between defect structure and Fe redistribution properties have been carefully analyzed. The results show the role of the primary defect structure in determining the annealing properties, both for damage recovery and Fe redistribution. The latter is also influenced by the doping of the substrate.

  17. Influence of annealing temperature and Sn doping on the optical properties of hematite thin films determined by spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    de Souza, Lígia P.; Chaves, Rodrigo O. G.; Malachias, Angelo; Paniago, Roberto; Ferreira, Sukarno O.; Ferlauto, Andre S.

    2016-06-01

    Hematite (α-Fe2O3) thin films were prepared by sol-gel route and investigated for application in H2 generation by photo-assisted water splitting. The photoelectrochemical (PEC) performance was shown to increase significantly for films deposited on SnO2:F/glass subjected to high temperature (T) annealing (>750 °C). Strong correlation was found between photogenerated current, donor concentration, and Sn concentration as determined by Mott-Schottky analysis and X-ray photoelectron spectroscopy. The effects of thermal annealing and Sn addition in the resulting microstructure and optical properties of hematite films deposited on fused silica substrates were determined by a combination of structural characterization techniques and spectroscopic ellipsometry. Thermal annealing (>600 °C) induces a higher optical absorption that is associated directly to film densification and grain growth; however, it promotes no changes in the energy positions of the main Fe2O3 electronic transitions. The band gap energy was found to be 2.21 eV and independent of microstructure and of Sn concentration for all studied films. On the other hand, Sn can be incorporated in the Fe2O3 lattice for concentration up to Sn/Fe ˜2%, leading to an increase in energy split of the main absorption peak, attributed to a distortion of the Fe2O3 lattice. For higher concentrations, Sn incorporation leads to a reduction in absorption, associated with higher porosity and the formation of a secondary Sn-rich phase. In summary, the variation in the optical properties induced by thermal annealing and Sn addition cannot account for the order of magnitude increase of the current density generated by photoanodes annealed at high T (>750 °C); thus, it is concluded that the major contribution for the enhanced PEC performance comes from improved electronic properties induced by the n-type doping caused by Sn diffusion from the SnO2:F substrate.

  18. Effect of annealing temperature on antimicrobial and structural properties of bio-synthesized zinc oxide nanoparticles using flower extract of Anchusa italica.

    PubMed

    Azizi, Susan; Mohamad, Rosfarizan; Bahadoran, Azadeh; Bayat, Saadi; Rahim, Raha Abdul; Ariff, Arbakariya; Saad, Wan Zuhainis

    2016-08-01

    The use of nontoxic biological compounds in the synthesis of nanomaterials is an economic and eco-friendly approach. The present work was undertaken to develop zinc oxide nanoparticles (ZnO-NPs) by a green method using simple precursor from the solution consisting of zinc acetate and the flower extract of Anchusa italica (A. italica). Effect of annealing temperature on structural and antimicrobial properties was investigated. The crystalline structure of ZnO-NPs was shown using X-ray diffraction (XRD) analysis. Transmission electron microscopy (TEM) results showed that ZnO-NPs are hexagonal in shapes with mean particle size of ~8 and ~14nm at 100°C and 200°C annealing temperatures respectively. The optical band gap was increased from 3.27eV to 3.30eV with the decreasing of the particle size. The antimicrobial activity of ZnO-NPs towards Gram positive (Bacillus megaterium and Stapphylococcus aureus) and Gram negative (Escherichia coli and Salmonella typhimurium) pathogens decreased with the increasing of the heat treating temperature. In vitro cytotoxicity studies on Vero cells, a dose dependent toxicity with non-toxic effect of concentration below 142μg/mL was shown. The results indicated that A. italica is an appropriate reaction media to prepare ZnO-NPs for cosmetic and bio-medical productions. Copyright © 2016 Elsevier B.V. All rights reserved.

  19. Depth Profile of Mn in GaAs/Mn/GaAs Heterostuctures and Thermal Annealing Effects Studied by Angular Dependence of X-ray Fluorescence

    NASA Astrophysics Data System (ADS)

    Kim, S.; Soo, Y. L.; Kioseoglou, G.; Chen, X.; Luo, H.; Kao, Y. H.; Sasaki, Y.; Liu, X.; Furdyna, J. K.

    2003-03-01

    Angular dependence of x-ray fluorescence (ADXRF) technique has been utilized to study Mn depth profile in GaAs (60 ÅMn (5 Åstructures MBE-grown on GaAs and annealed at temperatures 350, 450, and 550^oC. The nominal structure for as-grown sample was confirmed from detailed fluorescence analysis. We have found that a large amount of Mn migrate into the top GaAs layer in the sample annealed at 550^oC while the other samples showed only a slight change in the Mn profile as compared to the as-grown sample. These results provide unique information on the depth distribution of Mn atoms in Mn/GaAs magnetic digital alloys as a function of temperature in addition to those obtained previously^1 by means of grazing incidence x-ray scattering (GIXS) and x-ray diffraction. We have thus demonstrated that ADXRF technique is a useful nondestructive tool for probing the depth profile of samples with an ultra thin overlay or containing a small amount of impurity atoms. 1. G. Kioseoglou, S. Kim, Y. L. Soo, X. Chen, H. Luo, Y. H. Kao, Y. Sasaki, X. Liu, and J. K. Furdyna, Appl. Phys. Lett. 80, 1150 (2002).

  20. Defect reduction in silicon nanoparticles by low-temperature vacuum annealing

    NASA Astrophysics Data System (ADS)

    Niesar, S.; Stegner, A. R.; Pereira, R. N.; Hoeb, M.; Wiggers, H.; Brandt, M. S.; Stutzmann, M.

    2010-05-01

    Using electron paramagnetic resonance, we find that vacuum annealing at 200 °C leads to a significant reduction in the silicon dangling bond (Si-db) defect density in silicon nanoparticles (Si-NPs). The best improvement of the Si-db density by a factor of 10 is obtained when the vacuum annealing is combined with an etching step in hydrofluoric acid (HF), whereas HF etching alone only removes the Si-dbs at the Si/SiO2 interface. The reduction in the Si-db defect density is confirmed by photothermal deflection spectroscopy and photoconductivity measurements on thin Si-NPs films.

  1. Temperature dependence of standard model CP violation.

    PubMed

    Brauner, Tomáš; Taanila, Olli; Tranberg, Anders; Vuorinen, Aleksi

    2012-01-27

    We analyze the temperature dependence of CP violation effects in the standard model by determining the effective action of its bosonic fields, obtained after integrating out the fermions from the theory and performing a covariant gradient expansion. We find nonvanishing CP violating terms starting at the sixth order of the expansion, albeit only in the C-odd-P-even sector, with coefficients that depend on quark masses, Cabibbo-Kobayashi-Maskawa matrix elements, temperature and the magnitude of the Higgs field. The CP violating effects are observed to decrease rapidly with temperature, which has important implications for the generation of a matter-antimatter asymmetry in the early Universe. Our results suggest that the cold electroweak baryogenesis scenario may be viable within the standard model, provided the electroweak transition temperature is at most of order 1 GeV.

  2. Study on the dimensional, configurational and optical evolution of palladium nanostructures on c-plane sapphire by the control of annealing temperature and duration

    NASA Astrophysics Data System (ADS)

    Sui, Mao; Zhang, Quanzhen; Kunwar, Sundar; Pandey, Puran; Li, Ming-Yu; Lee, Jihoon

    2017-09-01

    Metallic nanostructures can find various applications such as in optoelectronic devices, nanostructure synthesis and catalytic applications and their applicability vary depending on their size, density and configuration dependent properties. In this paper, the dimensional and configurational evolution of self-assembled palladium (Pd) nanostructures is systematically studied on c-plane sapphire with the control of annealing temperature (AT) and annealing duration with the initial Pd layers of various thicknesses. Depending on the AT, two distinct growth regimes are observed based on the concurrent effect of surface diffusion, surface energy minimization and Pd sublimation: i.e. (i) agglomeration of Pd nano-clusters from voids (500 < AT ≤ 650 °C) and (ii) round nanoparticle (NP) fabrication (650 °C < AT ≤ 900 °C). At 950 °C, due to the sublimation of Pd atoms, substantial decrease in the NP dimension is witnessed and results in the ring patterns around the NPs. Additional investigation is performed at 950 °C to reveal the annealing duration effect on the NP evolution. Due to the dual effect of the Oswald ripening and atom sublimation, initially the dimension of NPs is grown and then gradually decays along with the duration, resulting in an inverted 'V' pattern evolution in diameter and height. Moreover, the evolution of optical properties such as absorption band and average reflectance are studied with the corresponding reflectance spectra as a function of wavelength over UV, visible and NIR region. The Raman spectra analysis depicts the variation of lattice vibration peak intensity and position based on the surface morphology of the Pd nanostructures.

  3. Temperature dependence of polymer photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Nakazawa, Yuko

    One of many steps to develop a sustainable society is to reduce the use of fossil fuels by replacing them with renewable energy sources, such as solar energy. This dissertation concerns one of the most contemporary methods to harvest solar radiation and covert it to electricity, using thin polymer films. The photovoltaic devices in this study consisted of a thin layer of p-phenylenevinylene (PPV) based semiconducting polymer sandwiched between two metals (semi-transparent ITO and evaporated metal electrode). Two modified device structures were studied, an interfacial heterojunction device, which includes an additional layer of inorganic n-type semiconductor (Ti-oxides) and a bulk heterojunction device, which is formed by blending electron-attracting materials. Both modifications resulted in higher device performances under ambient conditions due to an increased number of dissociation sites. From studies of inorganic solar cells, it is well known that temperature has a large effect on device performance. However, there are only a few studies on organic Solar cells, concerning the temperature dependence. This thesis focuses on understanding the temperature dependent behaviors of polymer photovoltaic devices. Temperature dependence study allows us to examine how the device parameters such as short circuit current (Isc) and open circuit voltage (Voc) are affected by the material properties and the device architectures. The current-voltage relationships were measured in a temperature controlled OXFORD cryostat operating between 150K and 404K. From the dark current-voltage measurements, the field-independent hole mobility (mu0) was extracted, using a space charge limited current analysis. From the photocurrent-voltage measurements, the temperature dependence on Isc, Voc, and fill factor were studied. The temperature characteristics of Isc (T) were compared to that of mu0(T), and two different dependencies were obtained for different device architectures. The temperature

  4. Investigations of Low Temperature Time Dependent Cracking

    SciTech Connect

    Van der Sluys, W A; Robitz, E S; Young, B A; Bloom, J

    2002-09-30

    The objective of this project was to investigate metallurgical and mechanical phenomena associated with time dependent cracking of cold bent carbon steel piping at temperatures between 327 C and 360 C. Boiler piping failures have demonstrated that understanding the fundamental metallurgical and mechanical parameters controlling these failures is insufficient to eliminate it from the field. The results of the project consisted of the development of a testing methodology to reproduce low temperature time dependent cracking in laboratory specimens. This methodology was used to evaluate the cracking resistance of candidate heats in order to identify the factors that enhance cracking sensitivity. The resultant data was integrated into current available life prediction tools.

  5. Temperature dependence in atom-surface scattering

    NASA Astrophysics Data System (ADS)

    Pollak, Eli; Manson, J. R.

    2012-03-01

    It is shown that a straightforward measure of the temperature dependence of energy resolved atom-surface scattering spectra measured under classical conditions can be related to the strength of the surface corrugation. Using classical perturbation theory combined with a Langevin bath formalism for describing energy transfer, explicit expressions for the scattering probabilities are obtained for both two-dimensional, in-plane scattering and full three-dimensional scattering. For strong surface corrugations results expressed as analytic closed-form equations for the scattering probability are derived which demonstrate that the temperature dependence of the scattering probability weakens with increasing corrugation strength. The relationship to the inelastic rainbow is briefly discussed.

  6. Effects of annealing temperature on ZnO and AZO films prepared by sol-gel technique

    NASA Astrophysics Data System (ADS)

    Ng, Zi-Neng; Chan, Kah-Yoong; Tohsophon, Thanaporn

    2012-10-01

    Zinc oxide (ZnO) films have the potential in the emerging thin-film technologies which can be employed in thin-film solar cells, transistors, sensors and other optoelectronic devices. In this work, low cost sol-gel spin-coating technique was used to synthesize the ZnO films. The influences of annealing temperature on the structural and optical properties of ZnO and aluminum doped ZnO (AZO) films were investigated. The structural properties of the ZnO films such as surface morphology and crystallinity were determined using atomic force microscopy (AFM) and X-ray diffractometry (XRD), respectively. The optical properties of the ZnO films were characterized by the ultraviolet-visible (UV-vis) spectroscopy and Tauc method was adopted to estimate the optical gap. The experimental results reveal that the thermal annealing treatment affects the properties of the ZnO films. The effects of the low range annealing temperature on the sol-gel ZnO films addressed in this investigation will be discussed in this paper.

  7. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    PubMed

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

  8. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    SciTech Connect

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-12-15

    A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

  9. Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Macco, Bart; Melskens, Jimmy; Podraza, Nikolas J.; Arts, Karsten; Pugh, Christopher; Thomas, Owain; Kessels, Wilhelmus M. M.

    2017-07-01

    Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (<50 °C) to provide crystalline silicon (c-Si) surface passivation. Despite the limited nanostructural quality of the a-Si:H bulk, a surprisingly high minority carrier lifetime of ˜4 ms is demonstrated after a rapid thermal annealing treatment. Besides the excellent level of surface passivation, the main advantage of the low-temperature approach is the facile suppression of undesired epitaxial growth. The correlation between the a-Si:H nanostructure and the activation of a-Si:H/c-Si interface passivation, upon annealing, has been studied in detail. This yields a structural model that qualitatively describes the different processes that take place in the a-Si:H films during annealing. The presented experimental findings and insights can prove to be useful in the further development of very thin a-Si:H passivation layers for use in silicon heterojunction solar cells.

  10. Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing

    NASA Astrophysics Data System (ADS)

    Mudryi, A. V.; Korshunov, F. P.; Patuk, A. I.; Shakin, I. A.; Larionova, T. P.; Ulyashin, A. G.; Job, R.; Fahrner, W. R.; Emtsev, V. V.; Davydov, V. Yu.; Oganesyan, G.

    2001-12-01

    The systematical low-temperature (4.2 K) photoluminescence (PL) study of the formation kinetics of optically active centers in H and He implanted CZ Si, annealed in the temperature range of 200-1000°C is presented. The samples were implanted with H (energy E=80 keV, dose D=10 15/10 16 cm -2) and He ( E=150 keV, D=5×10 14 cm -2) ions. It was found that the annealing of H or He implanted samples leads to the appearance and evolution of a number of zero-phonon lines as well as of broad bands. The origin of the observed lines and bands is discussed. It is assumed that the strong stresses around hydrogen-related structural defects (voids, bubbles) during the annealing at 500-700°C of H implanted Si lead to the formation of a specific optical center M‧ (∼1.012 eV PL line).

  11. A Low-Power and In Situ Annealing Mitigation Technique for Fast Neutrons Irradiation of Integrated Temperature Sensing Diodes

    SciTech Connect

    Francis, Laurent A.; Andre, Nicolas; Gerard, Pierre; Flandre, Denis; Ali, S. Zeeshan; Udrea, Florin

    2015-07-01

    High doses of fast neutrons is detrimental to the performance of most common solid-state devices such as diodes and transistors. The ionizing effect is observed in particular for diodes used as simple integrated temperature sensors, or thermo-diodes, when their junction voltage is measured at constant current bias. In this work, we present a low-power and in situ mitigation technique based on Silicon-on-Insulator (SOI) micro-hot-plates to recover thermo-diodes. The basic operating principle consists in annealing the temperature-sensitive diodes integrated on the membrane during or after their irradiation in order to restore similar sensing characteristics over time. We measured thermo-diodes integrated to micro-hot-plates during their irradiation by fast neutrons (23 MeV peak) with total doses about 2.97±0.08 kGy. The membrane annealing is taking place at 450 deg. C using 40 mW of electrical power. Thanks to the annealing, the diode keeps a total measurement error below 0.5 deg. C. In this harsh radiation environment and beside the good tolerance of the thermo-diodes and the membrane materials to the total ionizing dose, the thermo-diode located on the heating membrane keeps a constant sensitivity. The demonstrated resistance of micro-hot-plates and the integrated thermo-diodes to fast neutron radiations can extend their use in nuclear plants and for radiation detectors. (authors)

  12. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    SciTech Connect

    Li, Qin; Song, Zhong Xiao; Ma, Fei E-mail: liyhemail@gmail.com; Li, Yan Huai E-mail: liyhemail@gmail.com; Xu, Ke Wei

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  13. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    SciTech Connect

    Phuan, Yi Wen; Chong, Meng Nan; Zhu, Tao; Yong, Siek-Ting; Chan, Eng Seng

    2015-09-15

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600

  14. Room-temperature laser annealing for solid-phase epitaxial crystallization of β-Ga2O3 thin films

    NASA Astrophysics Data System (ADS)

    Shiojiri, Daishi; Fukuda, Daiji; Yamauchi, Ryosuke; Tsuchimine, Nobuo; Koyama, Koji; Kaneko, Satoru; Matsuda, Akifumi; Yoshimoto, Mamoru

    2016-10-01

    The epitaxial crystallization of β-Ga2O3 thin films on NiO-buffered α-Al2O3(0001) substrates via the solid-phase crystallization of amorphous Ga2O3 thin films by KrF excimer laser annealing at room temperature (RT) was examined. The results of X-ray and reflection high-energy electron diffraction measurements indicated that the epitaxial β-Ga2O3 (\\bar{2}01) thin films were fabricated by RT laser annealing. The optical bandgap of the thin films was estimated to be 4.9 eV from the results of UV/vis transmittance measurements. In the cathodoluminescence spectrum, UV-green luminescence was observed for the thin films. These optical properties are similar to those of bulk β-Ga2O3.

  15. The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing

    SciTech Connect

    Heng, C. L. Li, J. T.; Su, W. Y.; Yin, P. G.; Finstad, T. G.

    2015-01-28

    We studied the photoluminescence (PL) and structural properties of Ce and Yb co-doped silicon oxide films after high temperature annealing. The PL spectra of Ce{sup 3+} and Yb{sup 3+} ions were sensitive to the structural variation of the films, and the Yb PL intensities were significantly enhanced especially upon 1200 °C annealing. X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, indicated that rare earth silicates and the CeO{sub 2} phase had formed in the oxides. The proportions of the phases varied with the “nominal Si-richness” of the films. Energy transfer from the excited Ce{sup 3+} to Yb{sup 3+} can be inferred from both PL excitation and decay spectra.

  16. Enthalpy relaxation and annealing effect in polystyrene.

    PubMed

    Sakatsuji, Waki; Konishi, Takashi; Miyamoto, Yoshihisa

    2013-07-01

    The effects of thermal history on the enthalpy relaxation in polystyrene are studied by differential scanning calorimetry. The temperature dependence of the specific heat in the liquid and the glassy states, that of relaxation time, and the exponent of the Kohlrausch-Williams-Watts function are determined by measurements of the thermal response against sinusoidal temperature variation. A phenomenological model equation previously proposed to interpret the memory effect in the frozen state is applied to the enthalpy relaxation and the evolution of entropy under a given thermal history is calculated. The annealing below the glass transition temperature produces two effects on enthalpy relaxation: the decay of excess entropy with annealing time in the early stage of annealing and the increase in relaxation time due to physical aging in the later stage. The crossover of these effects is reflected in the variation of temperature of the maximum specific heat observed in the heating process after annealing and cooling.

  17. Effect of substrate temperature and post-annealing on the properties of CIGS thin films deposited using e-beam evaporation

    NASA Astrophysics Data System (ADS)

    Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Jinze; Wang, Wei; Shang, Huirong; Li, Yufang

    2016-12-01

    Cu(InGa)Se2 (CIGS) thin films were prepared using e-beam evaporation on a soda-lime glass substrate. The effect of substrate temperature and the difference between substrate temperature and post-annealing on the properties of the CIGS thin films and solar cells were studied. X-ray diffraction (XRD) and Raman spectroscopy, energy-dispersive spectroscopy, scanning electron microscopy, UV-Vis-NIR and the Hall effect were used to characterize the structural properties, composition, morphology, optical properties and electrical properties of the as-prepared CIGS thin films, respectively. The results demonstrated that the photoelectric properties of CIGS thin films prepared at a substrate temperature of 300 °C were optimal, with an efficiency of 7.1%. As the substrate temperature increased to over 300 °C, element gallium tended to evaporate from the substrate, which resulted in the variation of the Cu/(In  +  Ga) and Ga/(In  +  Ga) ratios of the films. The post-annealing process with in situ annealing temperatures of 300 °C and 400 °C was also studied. The results indicated that the post-annealing process, unlike the process of direct deposition at certain substrate temperatures, was able to avoid the element loss. At 300 °C in situ post-annealing temperature, there formed a ‘polygon grains’ Cu2-x Se phase, which disappeared when the in situ post-annealing temperature rose to 400 °C. The XRD patterns revealed that the post-annealing process made the element diffusion in films more uniform. The post-treated sample with an in situ post-annealing temperature at 400 °C, as a result, showed the highest efficiency of 9.0%, accompanied by the highest open-circuit voltage, short circuit current and fill factor.

  18. Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing

    NASA Astrophysics Data System (ADS)

    Lomov, Andrey A.; Shcherbachev, Kirill D.; Chesnokov, Yury M.; Kiselev, Dmitrii A.; Miakonkikh, Andrew V.

    2016-12-01

    Transformation of microstructure of the buried He bubbles of silicon surface layer after He+ low energy plasma immersion ion implantation and subsequent low-thermal annealing were studied by high resolution X-ray diffraction and reflectivity, Rutherford backscattering spectroscopy, transmission electron and atomic force microscopy methods. The ion energies varied in the range 2 - 5 keV at constant exposure ion doses 5×·1017 cm-2. Formation of a three-layer structure (amorphous a-SiOx layer at the surface, amorphous a-Si layer with helium bubbles and buried helium bubbles heavy damaged tensile strained crystalline c-Si layer) that is retained after annealing was observed. Helium-filled bubbles are observed in an as-implanted sample. Evolution of the multilayer structure and the bubbles due to annealing are revealed and comparing with the structural parameters of an as-implanted sample was done. The bubbles are shown to trend into two-model distribution after annealing. The characteristic bubble size is determined to be in a range of 2-20 nm. Large size helium-filled bubbles are located in the amorphous a-Si layer. Small size bubbles are revealed inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in c-Si layer.

  19. Enhanced p-type conduction of B-doped nanocrystalline diamond films by high temperature annealing

    SciTech Connect

    Gu, S. S.; Hu, X. J.

    2013-07-14

    We report the enhanced p-type conduction with Hall mobility of 53.3 cm{sup 2} V{sup -1} s{sup -1} in B-doped nanocrystalline diamond (NCD) films by 1000 Degree-Sign C annealing. High resolution transmission electronic microscopy, uv, and visible Raman spectroscopy measurements show that a part of amorphous carbon grain boundaries (GBs) transforms to diamond phase, which increases the opportunity of boron atoms located at the GBs to enter into the nano-diamond grains. This phase transition doping is confirmed by the secondary ion mass spectrum depth profile results that the concentration of B atoms in nano-diamond grains increases after 1000 Degree-Sign C annealing. It is also observed that 1000 Degree-Sign C annealing improves the lattice perfection, reduces the internal stress, decreases the amount of trans-polyacetylene, and increases the number or size of aromatic rings in the sp{sup 2}-bonded carbon cluster in B-doped NCD films. These give the contributions to improve the electrical properties of 1000 Degree-Sign C annealed B-doped NCD films.

  20. Temperature dependence of BCF plastic scintillation detectors

    PubMed Central

    Wootton, Landon; Beddar, Sam

    2013-01-01

    We examined temperature dependence in plastic scintillation detectors (PSDs) made of BCF-60 or BCF-12 scintillating fiber coupled to optical fiber with cyanoacrylate. PSDs were subjected to a range of temperatures using a temperature-controlled water bath and irradiated at each temperature while either the dose was measured using a CCD camera or the spectral output was measured using a spectrometer. The spectrometer was used to examine the intensity and spectral distribution of scintillation light emitted by the PSDs, Cerenkov light generated within the PSD, and light transmitted through an isolated optical coupling. BCF-60 PSDs exhibited a 0.50% decrease and BCF-12 PSDs a 0.09% decrease in measured dose per °C increase, relative to dose measured at 22°C. Spectrometry revealed that the total intensity of the light generated by BCF-60 and BCF-12 PSDs decreased by 0.32% and 0.13%, respectively, per °C increase. The spectral distribution of the light changed slightly with temperature for both PSDs, accounting for the disparity between the change in measured dose and total light output. The generation of Cerenkov light was temperature independent. However, light transmitted through optical coupling between the scintillator and the optical fiber also exhibited temperature dependence. PMID:23574889

  1. Temperature dependence of optically induced cell deformations

    NASA Astrophysics Data System (ADS)

    Fritsch, Anatol; Kiessling, Tobias R.; Stange, Roland; Kaes, Josef A.

    2012-02-01

    The mechanical properties of any material change with temperature, hence this must be true for cellular material. In biology many functions are known to undergo modulations with temperature, like myosin motor activity, mechanical properties of actin filament solutions, CO2 uptake of cultured cells or sex determination of several species. As mechanical properties of living cells are considered to play an important role in many cell functions it is surprising that only little is known on how the rheology of single cells is affected by temperature. We report the systematic temperature dependence of single cell deformations in Optical Stretcher (OS) measurements. The temperature is changed on a scale of about 20 minutes up to hours and compared to defined temperature shocks in the range of milliseconds. Thereby, a strong temperature dependence of the mechanics of single suspended cells is revealed. We conclude that the observable differences arise rather from viscosity changes of the cytosol than from structural changes of the cytoskeleton. These findings have implications for the interpretation of many rheological measurements, especially for laser based approaches in biological studies.

  2. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    SciTech Connect

    Mesquita, Anderson Fuzer; Porto, Arilza de Oliveira; Magela de Lima, Geraldo; Paniago, Roberto; Ardisson, José Domingos

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Synthesis of cadmium and tin telluride. ► Chemical route to obtain pure crystalline cadmium and tin telluride. ► Effect of the annealing temperature on the crystalline phases. ► Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

  3. Effect of the ion-beam bombardment and annealing temperature on sol-gel derived yttrium aluminum oxide film as liquid crystal alignment layer

    NASA Astrophysics Data System (ADS)

    Jeong, Hae-Chang; Heo, Gi-Seok; Kim, Eun-Mi; Lee, Ju Hwan; Han, Jeong-Min; Seo, Dae-Shik

    2017-02-01

    We demonstrated a homogeneous liquid-crystal (LC) alignment state on yttrium aluminum oxide (YAlO) films, where the alignment was induced by ion-beam (IB) irradiation. Topographical analysis was performed by atomic force microscopy as a function of annealing temperature. Higher annealing temperatures yielded a smoother surface, accompanied by reduced light scattering. Transparency in the visible region increased on the surface fabricated at higher annealing temperatures. LC alignment mechanism was determined by X-ray diffraction (XRD) analysis. Moreover, IB-irradiated YAlO films annealed at temperatures greater than 200 °C exhibited good thermal stability and low capacitance-voltage hysteresis. The IB-irradiated YAlO films are suitable as alternative alignment layers in advanced LC display applications.

  4. Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing

    NASA Astrophysics Data System (ADS)

    Saito, Eiji; Suda, Jun; Kimoto, Tsunenobu

    2016-06-01

    We investigated the carrier lifetime and Z1/2 center density of thick n-type 4H-SiC epilayers, which were oxidized and subsequently annealed in Ar at high temperatures. The Z1/2 center density decreased below the detection limit in the region to, at least, a 130 µm depth by thermal oxidation. After subsequent high-temperature annealing, the Z1/2 center density increased with increasing annealing temperature, while the distribution of the Z1/2 center density was nearly uniform to a 130 µm depth. The carrier lifetime could be controlled from 26 to 2.4 µs by changing the annealing temperature from 1600 to 1800 °C.

  5. The influence of annealing temperature on the interface and photovoltaic properties of CdS/CdSe quantum dots sensitized ZnO nanorods solar cells.

    PubMed

    Qiu, Xiaofeng; Chen, Ling; Gong, Haibo; Zhu, Min; Han, Jun; Zi, Min; Yang, Xiaopeng; Ji, Changjian; Cao, Bingqiang

    2014-09-15

    Arrays of ZnO/CdS/CdSe core/shell nanocables with different annealing temperatures have been investigated for CdS/CdSe quantum dots sensitized solar cells (QDSSCs). CdS/CdSe quantum dots were synthesized on the surface of ZnO nanorods that serve as the scaffold via a simple ion-exchange approach. The uniform microstructure was verified by scanning electron microscope and transmission electron microscope. UV-Visible absorption spectrum and Raman spectroscopy analysis indicated noticeable influence of annealing temperature on the interface structural and optical properties of the CdS/CdSe layers. Particularly, the relationship between annealing temperatures and photovoltaic performance of the corresponding QDSSCs was investigated employing photovoltaic conversion, quantum efficiency and electrochemical impedance spectra. It is demonstrated that higher cell efficiency can be obtained by optimizing the annealing temperature through extending the photoresponse range and improving QD layer crystal quality.

  6. Phase boundary and annealing dependent piezoelectricity in lead-free (K,Na)NbO3 nanorod arrays

    NASA Astrophysics Data System (ADS)

    He, Yahua; Wang, Zhao; Jin, Wenchao; Hu, Xiaokang; Li, Luying; Gao, Yihua; Zhang, Xianghui; Gu, Haoshuang; Wang, Xiaolin

    2017-05-01

    Orthorhombic (K,Na)NbO3 (KNN) nanorod arrays with the [110]-orientation were grown on SrTiO3 substrates by the hydrothermal method. The nanorods exhibited greatly enhanced piezoelectric performance, with the d33 piezoelectric coefficient increasing from 140 pm/V to 360 pm/V, after annealing in oxygen at temperatures ranging from 500 °C to 800 °C. The high temperature annealing process was accompanied by severe volatilization of K, which modified the K/Na ratio closer to 1:1. Thus, orthorhombic-tetragonal (O-T) phase boundaries appeared, which improved the piezoelectric property. Moreover, surface oxygen vacancies were passivated in the high-temperature oxygen atmosphere, which would reduce the charge density in the nanorods and contribute to the enhanced piezoelectricity. Therefore, excellent piezoelectricity in the KNN nanorod arrays was driven by the combination of the O-T phase boundaries and the oxygen vacancy passivation. This work demonstrates that KNN has great potential in piezoelectric materials area.

  7. Microstructural evolution during ultra-rapid annealing of severely deformed low-carbon steel: strain, temperature, and heating rate effects

    NASA Astrophysics Data System (ADS)

    Mostafaei, M. A.; Kazeminezhad, M.

    2016-07-01

    An interaction between ferrite recrystallization and austenite transformation in low-carbon steel occurs when recrystallization is delayed until the intercritical temperature range by employing high heating rate. The kinetics of recrystallization and transformation is affected by high heating rate and such an interaction. In this study, different levels of strain are applied to low-carbon steel using a severe plastic deformation method. Then, ultra-rapid annealing is performed at different heating rates of 200-1100°C/s and peak temperatures of near critical temperature. Five regimes are proposed to investigate the effects of heating rate, strain, and temperature on the interaction between recrystallization and transformation. The microstructural evolution of severely deformed low-carbon steel after ultra-rapid annealing is investigated based on the proposed regimes. Regarding the intensity and start temperature of the interaction, different microstructures consisting of ferrite and pearlite/martensite are formed. It is found that when the interaction is strong, the microstructure is refined because of the high kinetics of transformation and recrystallization. Moreover, strain shifts an interaction zone to a relatively higher heating rate. Therefore, severely deformed steel should be heated at relatively higher heating rates for it to undergo a strong interaction.

  8. Retrieving the ground state of spin glasses using thermal noise: Performance of quantum annealing at finite temperatures.

    PubMed

    Nishimura, Kohji; Nishimori, Hidetoshi; Ochoa, Andrew J; Katzgraber, Helmut G

    2016-09-01

    We study the problem to infer the ground state of a spin-glass Hamiltonian using data from another Hamiltonian with interactions disturbed by noise from the original Hamiltonian, motivated by the ground-state inference in quantum annealing on a noisy device. It is shown that the average Hamming distance between the inferred spin configuration and the true ground state is minimized when the temperature of the noisy system is kept at a finite value, and not at zero temperature. We present a spin-glass generalization of a well-established result that the ground state of a purely ferromagnetic Hamiltonian is best inferred at a finite temperature in the sense of smallest Hamming distance when the original ferromagnetic interactions are disturbed by noise. We use the numerical transfer-matrix method to establish the existence of an optimal finite temperature in one- and two-dimensional systems. Our numerical results are supported by mean-field calculations, which give an explicit expression of the optimal temperature to infer the spin-glass ground state as a function of variances of the distributions of the original interactions and the noise. The mean-field prediction is in qualitative agreement with numerical data. Implications on postprocessing of quantum annealing on a noisy device are discussed.

  9. Retrieving the ground state of spin glasses using thermal noise: Performance of quantum annealing at finite temperatures

    NASA Astrophysics Data System (ADS)

    Nishimura, Kohji; Nishimori, Hidetoshi; Ochoa, Andrew J.; Katzgraber, Helmut G.

    2016-09-01

    We study the problem to infer the ground state of a spin-glass Hamiltonian using data from another Hamiltonian with interactions disturbed by noise from the original Hamiltonian, motivated by the ground-state inference in quantum annealing on a noisy device. It is shown that the average Hamming distance between the inferred spin configuration and the true ground state is minimized when the temperature of the noisy system is kept at a finite value, and not at zero temperature. We present a spin-glass generalization of a well-established result that the ground state of a purely ferromagnetic Hamiltonian is best inferred at a finite temperature in the sense of smallest Hamming distance when the original ferromagnetic interactions are disturbed by noise. We use the numerical transfer-matrix method to establish the existence of an optimal finite temperature in one- and two-dimensional systems. Our numerical results are supported by mean-field calculations, which give an explicit expression of the optimal temperature to infer the spin-glass ground state as a function of variances of the distributions of the original interactions and the noise. The mean-field prediction is in qualitative agreement with numerical data. Implications on postprocessing of quantum annealing on a noisy device are discussed.

  10. FUNDAMENTAL AREAS OF PHENOMENOLOGY (INCLUDING APPLICATIONS): Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films

    NASA Astrophysics Data System (ADS)

    Cao, Feng; Wang, Yi-Ding; Yin, Jing-Zhi; Cong, Meng-Long; Han, Liang-Yu

    2009-11-01

    Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300 °C. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5 × 10-4 Ω.cm is obtained from the film annealed at 400 °C in N2. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature.

  11. Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

    NASA Astrophysics Data System (ADS)

    Yu, Haijiang

    This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation

  12. Colloidal solitary waves with temperature dependent compressibility

    NASA Astrophysics Data System (ADS)

    Azmi, A.; Marchant, T. R.

    2014-05-01

    Spatial solitary waves which form in colloidal suspensions of dielectric nanoparticles are considered. The interactions, or compressibility, of the colloidal particles, is modelled using a series in the particle density, or packing fraction, where the virial, or series, coefficients depend on the type of particle interaction model. Both the theoretical hard disk and sphere repulsive models, and a model with temperature dependent compressibility, are considered. Experimental results show that particle interactions can be temperature dependent and either repulsive or attractive in nature, so we model the second virial coefficient using a physically realistic temperature power law. One- and two-dimensional semi-analytical colloidal solitary wave solutions are found. Trial functions, based on the form of the nonlinear Schrödinger equation soliton, are used, together with averaging, to develop the semi-analytical solutions. When the background packing fraction is low, the one-dimensional solitary waves have three solutions branches (with a bistable regime) while the two-dimensional solitary waves have two solution branches, with a single stable branch. The temperature dependent second virial coefficient results in changes to the solitary wave properties and the parameter space, in which multiple solutions branches occur. An excellent comparison is found between the semi-analytical and numerical solutions.

  13. Comparison between the low temperature thermoluminescence spectra in annealed LiF:Mg,Cu, LiF:Mg,Cu,P and LiF:Mg,Cu,Si

    NASA Astrophysics Data System (ADS)

    Yang, B.; Wang, L.; Townsend, P. D.; Gao, H.

    2008-06-01

    Two strong thermal peaks in the wavelength range 220-420 nm have been detected at 128 and 140 K in LiF:Mg,Cu, at 123 and 135 K in LiF:Mg,Cu,P and at 125 and 133 K in LiF:Mg,Cu,Si, respectively. The origin of these main TL peaks is discussed in terms of defect perturbed H-F and VK-e type recombination, respectively. The relative intensity between the two peaks in each sample and the emission spectra are dependent on the dopants. Annealing at 240-390 °C can modify the low temperature TL features, especially in those samples doped with three impurities. The low temperature data give some clues to select most favourable dopants for future LiF-type dosimeters.

  14. The Mechanical Properties of the Mo-0.5Ti and Mo-0.1Zr Alloys at Room Temperature and High Temperature Annealing

    NASA Astrophysics Data System (ADS)

    Cui, Chaopeng; Gao, Yimin; Wei, Shizhong; Zhang, Guoshang; Zhou, Yucheng; Pan, Kunming; Zhu, Xiangwei; Guo, Songliang

    2017-02-01

    Mo-0.5Ti and Mo-0.1Zr alloys were prepared by powder metallurgy. In Mo-0.5Ti and Mo-0.1Zr alloys, there appears the second-phase particles of Ti2O3 and ZrO2 respectively, each of which can effectively prevent the dislocation activity in the process of plastic deformation. The addition of Zr can increase the strength of molybdenum alloys. Meanwhile, the ZrO2 formed from the alloy element Zr can refine the grains of molybdenum alloys to improve the recrystallization plasticity. After annealing, the tensile strength decreases while the plasticity greatly increases compared to the annealed Mo-0.5Ti and Mo-0.1Zr alloys. With the increase of annealing temperature, both the tensile strength and plasticity of Mo-0.5Ti and Mo-0.1Zr alloys decrease. Compared with pure Mo, after annealing the properties of the Mo-0.5Ti alloy and the plasticity of the Mo-0.1Zr alloy significantly increases.

  15. Effect of decarburization annealing temperature and time on the carbon content, microstructure, and texture of grain-oriented pure iron

    NASA Astrophysics Data System (ADS)

    Wang, Hai-jun; Rong, Zhe; Xiang, Li; Qiu, Sheng-tao; Li, Jian-xin; Dong, Ting-liang

    2017-04-01

    In this study, the effect of decarburization annealing temperature and time on the carbon content, microstructure, and texture of grain-oriented pure iron was investigated by optical microscopy and scanning electron microscopy with electron-backscatter diffraction. The results showed that the efficiency of decarburization dramatically increased with increasing decarburization temperature. However, when the annealing temperature was increased to 825°C and 850°C, the steel's carbon content remained essentially unchanged at 0.002%. With increasing decarburization time, the steel's carbon content generally decreased. When both the decarburization temperature and time were increased further, the average grain size dramatically increased and the number of fine grains decreased; meanwhile, some relatively larger grains developed. The main texture types of the decarburized sheets were approximately the same: {001}<110> and {112 115}<110>, with a γ-fiber texture. Furthermore, little change was observed in the texture. Compared with the experimental sheets, the texture of the cold-rolled sheet was very scattered. The best average magnetic induction ( B 800) among the final products was 1.946 T.

  16. Charge transfer efficiency in a p-channel CCD irradiated cryogenically and the impact of room temperature annealing

    NASA Astrophysics Data System (ADS)

    Gow, J. P. D.; Murray, N. J.; Wood, D.; Burt, D.; Hall, D. J.; Dryer, B.; Holland, A. D.

    2016-08-01

    It is important to understand the impact of the space radiation environment on detector performance, thereby ensuring that the optimal operating conditions are selected for use in flight. The best way to achieve this is by irradiating the device using appropriate mission operating conditions, i.e. holding the device at mission operating temperature with the device powered and clocking. This paper describes the Charge Transfer Efficiency (CTE) measurements made using an e2v technologies p-channel CCD204 irradiated using protons to the 10 MeV equivalent fluence of 1.24×109 protons.cm-2 at 153 K. The device was held at 153 K for a period of 7 days after the irradiation before being allowed up to room temperature where it was held at rest, i.e. unbiased, for twenty six hours to anneal before being cooled back to 153 K for further testing, this was followed by a further one week and three weeks of room temperature annealing each separated by further testing. A comparison to results from a previous room temperature irradiation of an n-channel CCD204 is made using assumptions of a factor of two worse CTE when irradiated under cryogenic conditions which indicate that p-channel CCDs offer improved tolerance to radiation damage when irradiated under cryogenic conditions.

  17. Annealing Temperature and Initial Iron Valence Ratio Effects on the Structural Characteristics of Nanoscale Nickel Zinc Ferrite

    SciTech Connect

    Calvin, S.; Shultz, M; Glowzenski, L; Carpenter, E

    2010-01-01

    Nickel zinc ferrite (NZFO) nanoparticles were synthesized via a reverse micelle method with a nonionic surfactant. Three different initial Fe{sup 3+}/Fe{sup 2+} ratios were employed along with three different firing temperatures (200, 500, 1000 C) to investigate the effects on the NZFO system. Extended x-ray absorption fine structure (EXAFS) results reveal zinc loss at high annealing temperatures; at 1000 C, the loss is nearly total for Fe{sup 3+}/Fe{sup 2+} ratios other than 10:90. Annealing at 500 C, however, appears necessary for fully incorporating the zinc and nickel into the spinel phase. The best nanoferrite was thus obtained using an initial Fe{sup 3+}/Fe{sup 2+} ratio of 10:90 and a moderate firing temperature of 500 C. This sample exhibits a room temperature saturation magnetization of 58 emu/g as measured via vibrating sample magnetometry, comparable with bulk values and greater than that of confirmed nano-NZFOs found in the literature. EXAFS also indicates that in all cases in which the elements adopted a spinel structure, the nickel occupies only octahedral sites and the zinc primarily tetrahedral sites.

  18. Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

    SciTech Connect

    Andreev, B. A.; Sobolev, N. A. Denisov, D. V.; Shek, E. I.

    2013-10-15

    The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of 500 Degree-Sign C are studied at 4.2 K on being annealed at 800-900 Degree-Sign C. Three sets of lines belonging to the emitting centers of erbium in silicon with a low oxygen-impurity concentration are revealed.

  19. Effects of annealing temperature on optical, morphological, and electrical characteristics of polyfluorene-derivative thin films on ITO glass substrate.

    PubMed

    Lim, Way Foong; Quah, Hock Jin; Hassan, Zainuriah

    2016-02-20

    The effects of postdeposition annealing temperature (125°C-200°C) toward optical, morphological, and electrical characteristics of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-phenylene)] end capped with dimethylphenyl group deposited on indium tin oxide glass substrates were investigated. Green and red-infrared photoluminescence emissions, originating from П-conjugation aggregates and keto-type defects did not attenuate the intensity of the blue emission peak. This suggested that the aggregates and defects might serve as local traps for radiative recombination. In samples annealed at 125°C-175°C, a decreasing optical energy gap (E(g)) that decreased barrier height as well as an increasing amount of traps have increased current conduction via thermionic emission and trap-assisted tunneling. Nonetheless, an acquisition of the largest E(g) and amount of traps testified that thermionic emission was dominating current conduction, surpassing trap-assisted tunneling in samples annealed at 200°C.

  20. Suppression of the antiferromagnetic pseudogap in the electron-doped high-temperature superconductor by protect annealing.

    PubMed

    Horio, M; Adachi, T; Mori, Y; Takahashi, A; Yoshida, T; Suzuki, H; Ambolode, L C C; Okazaki, K; Ono, K; Kumigashira, H; Anzai, H; Arita, M; Namatame, H; Taniguchi, M; Ootsuki, D; Sawada, K; Takahashi, M; Mizokawa, T; Koike, Y; Fujimori, A

    2016-02-04

    In the hole-doped cuprates, a small number of carriers suppresses antiferromagnetism and induces superconductivity. In the electron-doped cuprates, on the other hand, superconductivity appears only in a narrow window of high-doped Ce concentration after reduction annealing, and strong antiferromagnetic correlation persists in the superconducting phase. Recently, Pr(1.3-x)La0.7Ce(x)CuO4 (PLCCO) bulk single crystals annealed by a protect annealing method showed a high critical temperature of around 27 K for small Ce content down to 0.05. Here, by angle-resolved photoemission spectroscopy measurements of PLCCO crystals, we observed a sharp quasi-particle peak on the entire Fermi surface without signature of an antiferromagnetic pseudogap unlike all the previous work, indicating a dramatic reduction of antiferromagnetic correlation length and/or of magnetic moments. The superconducting state was found to extend over a wide electron concentration range. The present results fundamentally challenge the long-standing picture on the electronic structure in the electron-doped regime.

  1. Impacts of thermal annealing temperature on memory properties of charge trapping memory with NiO nano-pillars

    NASA Astrophysics Data System (ADS)

    Yan, Xiaobing; Yang, Tao; Jia, Xinlei; Zhao, Jianhui; Zhou, Zhenyu

    2017-03-01

    In this work, Au/SiO2/NiO/SiO2/Si structure charge trapping memory using NiO as the charge trapping layer was fabricated, and the impacts of the annealing temperature on the charge trapping memory performance were investigated in detail. The sample thermal annealed at 750 °C indicated a large memory window of 2.07 V under a low sweeping voltage of ± 5 V, which also has excellent charge retention properties with only small charge loss of ∼4.9% after more than 104 s retention. The high resolved transmission electron microscopy shows that the NiO films grew as nano-pillars structure. It is proposed that the excellent memory characteristics of the device are attributed to the inherent atomic defects and oxygen vacancies accumulated by the grain boundaries around NiO nano-pillars. Meanwhile the interface inter-diffusion formed by thermal annealing process is also an indispensable factor for the excellent memory characteristics of the device.

  2. Effect of annealing temperature on optical and electrical properties of ZrO2-SnO2 based nanocomposite thin films

    NASA Astrophysics Data System (ADS)

    Anitha, V. S.; Lekshmy, S. Sujatha; Berlin, I. John; Joy, K.

    2014-01-01

    Transparent nanocomposite ZrO2-SnO2 thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO2-SnO2 films can be used in many applications and in optoelectronic devices.

  3. Strong, Twist-Stable Carbon Nanotube Yarns and Muscles by Tension Annealing at Extreme Temperatures.

    PubMed

    Di, Jiangtao; Fang, Shaoli; Moura, Francisco A; Galvão, Douglas S; Bykova, Julia; Aliev, Ali; de Andrade, Mônica Jung; Lepró, Xavier; Li, Na; Haines, Carter; Ovalle-Robles, Raquel; Qian, Dong; Baughman, Ray H

    2016-08-01

    A high-speed incandescent tension annealing process (ITAP) is used to increase the modulus and strength of twist-spun carbon nanotube yarns by up to 12-fold and 2.6-fold, respectively, provide remarkable resistance to oxidation and powerful protonating acids, and freeze yarn untwist. This twist stability enables torsional artificial-muscle motors having improved performance and minimizes problematic untwist during weaving nanotube yarns.

  4. Effects of storage temperatures and annealing conditions on the structure and properties of potato (Solanum tuberosum) starch.

    PubMed

    Tester, R F; Ansell, R; Snape, C E; Yusuph, M

    2005-07-01

    Starches were extracted from freshly harvested potatoes (12 cultivars, grown in Perthshire) and the properties of the starches of six cultivars were compared with starches extracted from the same samples but stored at 5, 25 or 55 degrees C for 7 days before extraction. The amylose (total) content of the freshly extracted starches from tubers stored at 5, 25 or 55 degrees C was on average 27.9+/-2.3, 28.3+/-1.7, 29.2+/-2.2 and 28.8+/-1.5%, respectively, with corresponding phosphorus representing 60+/-16, 64+/-9, 61+/-5 and 63+/-9 mg 100 g(-1). The unit chain distribution by chromatography of the amylopectin molecules from the starches extracted from the different conditions was very similar with an average degree of polymerisation (DP) of 26+/-2 where the two major fractions (F1 and F2) represented 54+/-2 and 19+/-1, respectively. Peak gelatinisation temperatures (Tp) and enthalpies (DeltaH) for the freshly extracted starches and from tubers stored at 5 or 25 degrees C were very similar (63.3+/-1.5 degrees C and 18.6+/-0.8 J g(-1); 63.1+/-1.0 degrees C and 17.7+/-1.5 J g(-1) and; 62.9+/-0.7 degrees C and 18.7+/-1.1 J g(-1), respectively) although starches stored at 55 degrees C were annealed, where Tp represented 71.1+/-1.1 degrees C and DeltaH 18.1+/-1.4 J g(-1). These in situ-annealed starches were comparable in terms of gelatinisation characteristics to annealed freshly extracted starches where on average, T(p) represented 72.7+/-1.0 degrees C and DeltaH 20.8+/-1.0 J g(-1). Annealing of tubers in situ prior to processing might be beneficial with respect to developing new potato-based products.

  5. Temperature dependent phonon properties of thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Hellman, Olle; Broido, David; Fultz, Brent

    2015-03-01

    We present recent developments using the temperature dependent effective potential technique (TDEP) to model thermoelectric materials. We use ab initio molecular dynamics to generate an effective Hamiltonian that reproduce neutron scattering spectra, thermal conductivity, phonon self energies, and heat capacities. Results are presented for (among others) SnSe, Bi2Te3, and Cu2Se proving the necessity of careful modelling of finite temperature properties for strongly anharmonic materials. Supported by the Swedish Research Council (VR) Project Number 637-2013-7296.

  6. Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators

    PubMed Central

    Mahdi, Rahman Ismael; Gan, W.C.; Abd. Majid, W. H.

    2014-01-01

    Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method. PMID:25317763

  7. Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

    PubMed

    Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

    2014-10-14

    Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

  8. Comparative study of the performance of quantum annealing and simulated annealing.

    PubMed

    Nishimori, Hidetoshi; Tsuda, Junichi; Knysh, Sergey

    2015-01-01

    Relations of simulated annealing and quantum annealing are studied by a mapping from the transition matrix of classical Markovian dynamics of the Ising model to a quantum Hamiltonian and vice versa. It is shown that these two operators, the transition matrix and the Hamiltonian, share the eigenvalue spectrum. Thus, if simulated annealing with slow temperature change does not encounter a difficulty caused by an exponentially long relaxation time at a first-order phase transition, the same is true for the corresponding process of quantum annealing in the adiabatic limit. One of the important differences between the classical-to-quantum mapping and the converse quantum-to-classical mapping is that the Markovian dynamics of a short-range Ising model is mapped to a short-range quantum system, but the converse mapping from a short-range quantum system to a classical one results in long-range interactions. This leads to a difference in efficiencies that simulated annealing can be efficiently simulated by quantum annealing but the converse is not necessarily true. We conclude that quantum annealing is easier to implement and is more flexible than simulated annealing. We also point out that the present mapping can be extended to accommodate explicit time dependence of temperature, which is used to justify the quantum-mechanical analysis of simulated annealing by Somma, Batista, and Ortiz. Additionally, an alternative method to solve the nonequilibrium dynamics of the one-dimensional Ising model is provided through the classical-to-quantum mapping.

  9. A theoretical framework to obtain interface's shapes during the high-temperature annealing of high-aspect-ratio gratings

    NASA Astrophysics Data System (ADS)

    Castez, Marcos F.; Salvarezza, Roberto C.; Nakamura, Jun; Sudoh, Koichi

    2010-09-01

    High-temperature annealing applied to solid samples produces important morphological modifications on their surfaces, particularly in high-aspect-ratio gratings. We show, how by means of a framework based in a nonlinear analysis of the Mullins' equation [J. Appl. Phys. 28, 333 (1957)], we can mathematically reproduce surface's shapes just by measuring a few characteristic features of the interfaces (essentially pattern's amplitudes and wavelengths). We compared our results with experimental data on silicon samples, finding a close agreement between experimental shapes and those theoretically predicted. The introduced framework could be particularly useful in those situations where no cross-sectional information were available.

  10. Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

    SciTech Connect

    Lemaitre, Maxime G.; Tongay, Sefaattin; Wang, Xiaotie; Venkatachalam, Dinesh K.; Elliman, Robert G.; Fridmann, Joel; Gila, Brent P.; Appleton, Bill R.; Hebard, Arthur F.; Ren, Fan

    2012-05-07

    A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.

  11. Study of electric susceptibility, electrical resistivity and energy loss functions of carbon-nickel composite films at different annealing temperatures

    NASA Astrophysics Data System (ADS)

    Dalouji, V.; Elahi, S. M.; Saadi Alecasir, M.

    2015-11-01

    In this work, the optical and electrical properties of carbon-nickel films annealed at different temperatures (300-1000 °C) were investigated. The obtained data of the refractive index n using the Swanepoel’s method can be analyzed to obtain the high-frequency dielectric constant which describes the free carriers and the lattice vibration modes of dispersion. The lattice dielectric constant ɛL and the plasma frequency ωp at 500 °C have maximum values 4.95 and 40.02 × 106 Hz, respectively. The free carrier electric susceptibility measurements in wavelength range (300-1000 nm) are discussed according to the Spitzer-Fan model. It is shown that the electric susceptibility at 500 °C has maximum value and with increasing wavelength it increases. It is also shown that the waste of electrical energy as heat at 500 °C has maximum value and with increasing wavelength it increases. It is found that energy loss by the free charge carriers when traversing the bulk and surface of films at 800 °C has a minimum value and it is approximately constant with wavelength. It is shown that optical properties were consistent with electrical properties of films annealed at different temperatures in temperature range (15-500 K).

  12. Effect of annealing temperature and pH on morphology and optical property of highly dispersible ZnO nanoparticles

    SciTech Connect

    Uthirakumar, Periyayya; Hong, Chang-Hee

    2009-11-15

    Highly dispersible zinc oxide nanoparticles were produced in large quantity via a simple solution method. The effect of temperature and pH impact on as-prepared ZnO nanoparticles with respect to the morphological and optical characteristics has been investigated. The average particle size of ZnO nanoparticles increased with increasing annealing temperature. A sharp UV band-edge emission was observed in as-prepared ZnO nanoparticles with negligibly less intense deep level emission. However, upon annealing at high temperature in air, UV band-edge emission disappears with an evolution of a broad deep level emission in photoluminescence spectra. Similarly, by adjusting the pH of reaction medium from 4 to pH = 8 using ammonium hydroxide solution, particle size gets bigger and bigger leads to red-shift in UV band-edge emission and an appearance of deep level emission peak. At pH = 8, well resolved sharp X-ray diffraction peaks were observed with lower FWHM values due to higher crystallite sizes.

  13. Flow rate distribution and effect of convection and radiation heat transfer on the temperature profile during a coil annealing process

    NASA Astrophysics Data System (ADS)

    Haouam, A.; Bigerelle, M.

    2015-02-01

    Determining the temperature of several steel coils, heated in a furnace with a controlled hydrogen environment is important in an annealing process. Temperatures must be defined during heat treatment in order to guarantee metallurgical properties and acceptable reduced residual stresses. In this paper we approach hydrogen flow characteristics in the furnace and through a set of coils using an annealing non-differential model. Fluid flow is schematized as a pipe network solved by the Hardy Cross method to obtain pressure drops across the various gas flow segments. A comparison is made between measured and simulated results, confirming the adequacy of adopted assumptions and the validity of proposed model. Convective and radiative exchanges between the furnace and the coils are calculated by a discretization using the finite differences method. The convection coefficients are estimated and introduced into the boundary conditions around the coil to obtain the temperature distribution in the coils and in the covering bell. Finally, heat exchanges by convection and radiation are estimated by this model and the modeling errors are <8 °C.

  14. Temperature-dependent reflectivity of silicon carbide

    NASA Technical Reports Server (NTRS)

    Ng, Daniel

    1992-01-01

    The spectral reflectivity of a commercial silicon carbide (SiC) ceramic surface was measured at wavelengths from 2.5 to 14.5 microns and at temperatures ranging from 358 to 520 K using a NASA-developed multiwavelength pyrometer. The SiC surface reflectivity was low at the short wavelengths, decreasing to almost zero at 10 microns, then increasing rapidly to a maximum at approximately 12.5 microns, and decreasing gradually thereafter. The reflectivity maximum increased in magnitude with increasing surface temperature. The wavelength and temperature dependence can be explained in terms of the classical dispersion theory of crystals and the Lorentz electron theory. Electronic transitions between the donor state and the conduction band states were responsible for the dispersion. The concentration of the donor state in SiC was determined to be approximately 4 x 10 exp 18 and its ionization energy was determined to be approximately 71 meV.

  15. Temperature dependence of hole growth kinetics in aluminum-phthalocyanine-tetrasulfonate in hyperquenched glassy water.

    PubMed

    Dang, N C; Reinot, T; Reppert, M; Jankowiak, R

    2007-02-22

    The temperature (T) dependence of hole growth kinetics (HGK) data that span more than four decades of burn fluence are reported for aluminum-phthalocyanine tetrasulfonate (APT) in fresh and annealed hyperquenched glassy water (HGW) for temperatures between 5 and 20 K. The highly dispersive HGK data are modeled by using the "master" equation based on the two level system (TLS) model described in 2000 by Reinot and Small [J. Chem. Phys. 2000, 113, 10207]. We have demonstrated that thermal line broadening is not enough to account for temperature-dependent HGK for temperatures greater than 10 K. To overcome the discrepancy, the hole growth model must account for thermal hole filling (THF) processes. For the first time, the "master" equation used for HGK simulations is modified to take into account both the temperature dependence of the (single site) absorption spectrum and THF processes, effectively turning off those TLS which do not participate in the hole burning process at higher temperatures. A single set of parameters, some of which were determined directly from the hole spectra, was found to provide satisfactory fits to the HGK data for APT in fresh and annealed HGW for holes burned in the 679.7-676.9 nm range from the high to low energy sides of the Qx absorption band. Furthermore, we propose that HGK modeling at high burn fluences requires that the TLS model be further modified to take into account the existence of extrinsic multiple level systems.

  16. The influence of temperature on fatigue-crack growth in a mill annealed Ti-6Al-4V alloy

    NASA Technical Reports Server (NTRS)

    Wei, R. P.; Ritter, D. L.

    1972-01-01

    To understand the influence temperature on the rate of fatigue crack growth in high strength metal alloys, constant load amplitude, fatigue crack growth experiments were carried out using a 1/4-inch-thick (6.35 mm) mill annealed Ti-6Al-4V alloy plate as a model material. The rates of fatigue crack growth were determined as a function of temperature, ranging from room temperature to about 290 C (or, about 550 F/563K) and as a function of the crack tip stress intensity factor in a dehumidified high purity argon environment. Limited correlative experiments indicate that dehumidified oxygen and hydrogen have no effect on the rate of fatigue crack growth in this alloy, while distilled water increased the rate of crack growth slightly in the range tested. Companion fractographic examinations suggest that the mechanisms for fatigue crack growth in the various environments are essentially the same.

  17. Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H)

    SciTech Connect

    Fleming, R. M.; Myers, S. M.

    2006-08-15

    Deuterated p-type GaN(Mg,{sup 2}H) films were irradiated at room temperature with 1 MeV protons to create native point defects with a concentration approximately equal to the Mg doping (5x10{sup 19} cm{sup -3}). The samples were then annealed isothermally at a succession of temperatures while monitoring the infrared absorption due to the H local mode of the MgH defect. As the samples were annealed, the MgH absorption signal decreased and a new mode at slightly higher frequency appeared, which has been associated with the approach of a mobile nitrogen interstitial. We used the time dependence of the MgH absorption to obtain a diffusion barrier of the nitrogen interstitial in p-type GaN of 1.99 eV. This is in good agreement with theoretical calculations of nitrogen interstitial motion in GaN.

  18. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

    PubMed

    Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

  19. Effects of annealing temperature on structure and magnetic properties of CoAl0.2Fe1.8O4/SiO2 nanocomposites

    NASA Astrophysics Data System (ADS)

    Wang, L.; Li, J.; Liu, M.; Zhang, Y. M.; Lu, J. B.; Li, H. B.

    2012-12-01

    CoAl0.2Fe1.8O4/SiO2 nanocomposites were prepared by sol-gel method. The effects of annealing temperature on the structure and magnetic properties of the samples were studied by X-ray diffraction, transmission electron microscopy, vibrating sample magnetometer and Mössbauer spectroscopy. The results show that the CoAl0.2Fe1.8O4 in the samples exhibits a spinel structure after being annealed. As annealing temperature increases from 800 to 1200 °C, the average grain size of CoAl0.2Fe1.8O4 in the nanocomposites increases from 5 to 41 nm while the lattice constant decreases from 0.8397 to 0.8391 nm, the saturation magnetization increases from 21.96 to 41.53 emu/g. Coercivity reaches a maximum of 1082 Oe for the sample annealed at 1100 °C, and thereafter decreases with further increasing annealing temperature. Mössbauer spectra show that the isomer shift decreases, hyperfine field increases and the samples transfer from mixed state of superparamagnetic and magnetic order to the completely magnetic order with annealing temperature increasing from 800 to 1200 °C.

  20. Influence of annealing temperature and Sn doping on the optical properties of hematite thin films determined by spectroscopic ellipsometry

    SciTech Connect

    Souza, Lígia P. de; Chaves, Rodrigo O. G.; Malachias, Angelo; Paniago, Roberto; Ferlauto, Andre S.; Ferreira, Sukarno O.

    2016-06-28

    Hematite (α-Fe{sub 2}O{sub 3}) thin films were prepared by sol-gel route and investigated for application in H{sub 2} generation by photo-assisted water splitting. The photoelectrochemical (PEC) performance was shown to increase significantly for films deposited on SnO{sub 2}:F/glass subjected to high temperature (T) annealing (>750 °C). Strong correlation was found between photogenerated current, donor concentration, and Sn concentration as determined by Mott-Schottky analysis and X-ray photoelectron spectroscopy. The effects of thermal annealing and Sn addition in the resulting microstructure and optical properties of hematite films deposited on fused silica substrates were determined by a combination of structural characterization techniques and spectroscopic ellipsometry. Thermal annealing (>600 °C) induces a higher optical absorption that is associated directly to film densification and grain growth; however, it promotes no changes in the energy positions of the main Fe{sub 2}O{sub 3} electronic transitions. The band gap energy was found to be 2.21 eV and independent of microstructure and of Sn concentration for all studied films. On the other hand, Sn can be incorporated in the Fe{sub 2}O{sub 3} lattice for concentration up to Sn/Fe ∼2%, leading to an increase in energy split of the main absorption peak, attributed to a distortion of the Fe{sub 2}O{sub 3} lattice. For higher concentrations, Sn incorporation leads to a reduction in absorption, associated with higher porosity and the formation of a secondary Sn-rich phase. In summary, the variation in the optical properties induced by thermal annealing and Sn addition cannot account for the order of magnitude increase of the current density generated by photoanodes annealed at high T (>750 °C); thus, it is concluded that the major contribution for the enhanced PEC performance comes from improved electronic properties induced by the n-type doping caused by Sn diffusion from the SnO{sub 2}:F

  1. Effects of low-temperature annealing on the microstructure and grain boundary chemistry of irradiated type 304SS and correlations with IASCC resistance

    SciTech Connect

    Jacobs, A.J.; Dumbill, S.

    1995-12-31

    Low-temperature annealing (LTA) is a known technique for mitigating irradiation-assisted stress corrosion cracking (IASCC) in laboratory stress corrosion cracking tests. A combined transmission electron microscope (TEM)/scanning transmission electron microscope (STEM) study was undertaken to determine the microstructural and/or grain boundary compositional differences between an IASCC-resistant material, which had been mill-annealed, then irradiated and subjected to a low-temperature anneal; and an IASCC-susceptible material, which had been mill-annealed and irradiated only. The material used was commercial-purity Type 304SS from a control blade sheath. Stress corrosion resistance was measured in constant extension rate tensile (CERT) and constant deflection tests in a hot cell. Attempts were made to correlate microhardness data obtained from tested constant deflection specimens with dislocation density measured in the TEM and with IASCC resistance. Phosphorus and silicon segregation and chromium depletion are reported as a function of heat treatment and IASCC resistance.

  2. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  3. Temperature dependent light transmission in ferrofluids

    NASA Astrophysics Data System (ADS)

    Brojabasi, Surajit; Mahendran, V.; Lahiri, B. B.; Philip, John

    2015-05-01

    We investigate the influence of temperature on the magnetic field induced light transmission in a kerosene based ferrofluid containing oleic acid coated Fe3O4 nanoparticles, where the direction of propagation of light is parallel to the direction of the external magnetic field. At a fixed temperature the transmitted light intensity is found to monotonically increase with incident wavelength due to reduced extinction efficiency at higher wavelength. The transmitted intensity decreases with external magnetic field due to enhanced scattering from the field induced linear chain like structures along the direction of the external magnetic field and due to the build-up of standing waves inside the scattering medium. The extinction of the field induced transmitted light intensity is found to occur at a lower external field as the sample temperature is lowered. The rate of extinction of normalized transmitted light intensity decreased linearly with increasing sample temperature due to slower field induced aggregation kinetics because of an increased Brownian motion of the suspended nanoparticles and a reduced coupling constant. The observed temperature dependent magneto-optical properties of magnetic nanofluids can be exploited for applications in optical devices.

  4. Effects of Phosphorous-doping and High Temperature Annealing on CVD grown 3C-SiC

    SciTech Connect

    I. J. van Rooyen; J. H. Neethling; A. Henry; E. Janzen; S. M. Mokoduwe; A. Janse van Vuuren; E. Olivier

    2012-10-01

    The integrity and property behavior of the SiC layer of the Tri-isotropic (TRISO) coated particle (CP) for high temperature reactors (HTR) are very important as the SiC layer is the main barrier for gaseous and metallic fission product release. This study describes the work done on un-irradiated SiC samples prepared with varying phosphorus levels to simulate the presence of phosphorus due to transmutation. 30Si transmutes to phosphorous (31P) and other transmutation products during irradiation, which may affect the integrity of the SiC layer. The P-doping levels of the SiC samples used in this study cover the range from 1.1x1015 to 1.2x1019 at/cm3 and are therefore relevant to the PBMR operating conditions. Annealing from 1000 C to 2100 C was performed to study the possible changes in nanostructures and various properties due to temperature. Characterization results by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM), are reported in this article. As grain boundary diffusion is identified as a possible mechanism by which 110mAg, one of the fission activation products, might be released through intact SiC layer, grain size measurements is also included in this study. Temperature is evidently one of the factors/parameters amongst others known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. The ASTM E112 method as well as electron back scatter diffraction (EBSD) was used to determine the grain size of various commercial SiC samples and the SiC layer in experimental PBMR Coated Particles (CPs) after annealing at temperatures ranging from 1600 C to 2100 C. The HRTEM micrograph of the decomposition of SiC at 2100 C are shown and discussed. Nanotubes were not identified during the TEM and HRTEM analysis although graphitic

  5. Investigation of isochronal annealing on the optical properties of HWCVD amorphous silicon nitride deposited at low temperatures and low gas flow rates

    NASA Astrophysics Data System (ADS)

    Muller, T. F. G.; Jacobs, S.; Cummings, F. R.; Oliphant, C. J.; Malgas, G. F.; Arendse, C. J.

    2015-06-01

    Hydrogenated amorphous silicon nitride (a-SiNx:H) is used as anti-reflection coatings in commercial solar cells. A final firing step in the production of micro-crystalline silicon solar cells allows hydrogen effusion from the a-SiNx:H into the solar cell, and contributes to bulk passivation of the grain boundaries. In this study a-SiNx:H deposited in a hot-wire chemical vapour deposition (HWCVD) chamber with reduced gas flow rates and filament temperature compared to traditional deposition regimes, were annealed isochronally. The UV-visible reflection spectra of the annealed material were subjected to the Bruggeman Effective Medium Approximation (BEMA) treatment, in which a theoretical amorphous semiconductor was combined with particle inclusions due to the structural complexities of the material. The extraction of the optical functions and ensuing Wemple-DeDomenici analysis of the wavelength-dependent refractive index allowed for the correlation of the macroscopic optical properties with the changes in the local atomic bonding configuration, involving silicon, nitrogen and hydrogen.

  6. Phase separation in SiGe nanocrystals embedded in SiO{sub 2} matrix during high temperature annealing

    SciTech Connect

    Mogaddam, N. A. P.; Turan, R.; Alagoz, A. S.; Yerci, S.; Foss, S.; Finstad, T. G.

    2008-12-15

    SiGe nanocrystals have been formed in SiO{sub 2} matrix by cosputtering Si, Ge, and SiO{sub 2} independently on Si substrate. Effects of the annealing time and temperature on structural and compositional properties are studied by transmission electron microscopy, x-ray diffraction (XRD), and Raman spectroscopy measurements. It is observed that Ge-rich Si{sub (1-x)}Ge{sub x} nanocrystals do not hold their compositional uniformity when annealed at high temperatures for enough long time. A segregation process leading to separation of Ge and Si atoms from each other takes place. This process has been evidenced by a double peak formation in the XRD and Raman spectra. We attributed this phase separation to the differences in atomic size, surface energy, and surface diffusion disparity between Si and Ge atoms leading to the formation of nonhomogenous structure consist of a Si-rich SiGe core covered by a Ge-rich SiGe shell. This experimental observation is consistent with the result of reported theoretical and simulation methods.

  7. High-Temperature-Short-Time Annealing Process for High-Performance Large-Area Perovskite Solar Cells.

    PubMed

    Kim, Minjin; Kim, Gi-Hwan; Oh, Kyoung Suk; Jo, Yimhyun; Yoon, Hyun; Kim, Ka-Hyun; Lee, Heon; Kim, Jin Young; Kim, Dong Suk

    2017-06-27

    Organic-inorganic hybrid metal halide perovskite solar cells (PSCs) are attracting tremendous research interest due to their high solar-to-electric power conversion efficiency with a high possibility of cost-effective fabrication and certified power conversion efficiency now exceeding 22%. Although many effective methods for their application have been developed over the past decade, their practical transition to large-size devices has been restricted by difficulties in achieving high performance. Here we report on the development of a simple and cost-effective production method with high-temperature and short-time annealing processing to obtain uniform, smooth, and large-size grain domains of perovskite films over large areas. With high-temperature short-time annealing at 400 °C for 4 s, the perovskite film with an average domain size of 1 μm was obtained, which resulted in fast solvent evaporation. Solar cells fabricated using this processing technique had a maximum power conversion efficiency exceeding 20% over a 0.1 cm(2) active area and 18% over a 1 cm(2) active area. We believe our approach will enable the realization of highly efficient large-area PCSs for practical development with a very simple and short-time procedure. This simple method should lead the field toward the fabrication of uniform large-scale perovskite films, which are necessary for the production of high-efficiency solar cells that may also be applicable to several other material systems for more widespread practical deployment.

  8. A self-propagation high-temperature synthesis and annealing route to synthesis of wave-like boron nitride nanotubes

    SciTech Connect

    Wang, Jilin; Zhang, Laiping; Gu, Yunle; Pan, Xinye; Zhao, Guowei; Zhang, Zhanhui

    2013-03-15

    Highlights: ► Large quantities of wave-like BN nanotubes were synthesized by SHS-annealing method. ► The catalytic boron-containing porous precursor was produced by self-propagation high-temperature synthesis method. ► Three growth models were proposed to explain the growth mechanism of the wave-like BN nanotubes. - Abstract: Large quantities of boron nitride (BN) nanotubes were synthesized by annealing a catalytic boron-containing porous precursor in flowing NH{sub 3} gas at 1180 °C. The porous precursor was prepared by self-propagation high-temperature synthesis (SHS) method at 800 °C using Mg, B{sub 2}O{sub 3} and amorphous boron powder (α-B) as the starting materials. The porous precursor played an important role in large quantities synthesis of BN nanotubes. The as-synthesized product was characterized by X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), Raman, Scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), Transmission electron microscopy (TEM) and High-resolution transmission electron microscopy (HRTEM). Characterization results indicated that the BN nanotubes displayed wave-like inner structures with diameters in the range of 50–300 nm and average lengths of more than 10 μm. The possible growth mechanism of the BN nanotubes was also discussed.

  9. Surface Al doping of 4H-SiC via low temperature annealing

    NASA Astrophysics Data System (ADS)

    Park, Junbo; Kim, Ki-hwan; Park, Young-rak; Kim, Minki; Lee, Hyungseok; Jun, Chi-Hoon; Koo, Sangmo; Ko, Sang Choon

    2016-07-01

    We present a method of forming shallow p-doping on a 4H-SiC surface by depositing a thin Al layer (d = 5 nm) and then thermally annealing it at 1000 °C for 10 min. A secondary ion mass spectrometry analysis of the annealed Al/SiC sample reveals an Al concentration in excess of 1017 cm-3 up to a depth of d ≤ 250 nm. I-V measurements and CV characterizations of Ti-SiC Schottky barrier diodes (SBDs) fabricated on a n-type SiC epi-wafer indicate that the shallow Al doping increases the built-in potential of the junction and the barrier height by Δ V b i = 0.51 eV and Δ ϕ B = 0.26 eV , respectively. Assuming a rectangular doping profile, calculations of the built-in voltage shift and the Schottky barrier height indicate that partial dopant activation (activation ratio ˜2%) can induce the observed barrier height shift. The shallow doping method was then used to fabricate junction terminations in SBDs which increased the breakdown voltage and reduced the reverse leakage current. Technology CAD simulations of the SBD with and without doping verify that a reduction of peak electric field can explain the improvement of the breakdown voltage.

  10. The growth of ubiquitous ZnO rods on PMMA-coated substrate by solution-immersion method at different annealing temperatures

    SciTech Connect

    Aadila, A. Asib, N. A. M.; Afaah, A. N.; Husairi, F. S.; Khusaimi, Z.; Mohamed, R.; Rusop, M.

    2016-07-06

    In this work, solution-immersion method was used to grow ZnO rods on PMMA-coated substrate. For this purpose, 0.15 M of zinc nitrate hexahydrate (Zn(NO{sub 3}){sub 2}.6H{sub 2}O) and hexamethylenetetramine (C{sub 6}H{sub 12}N{sub 4}) were used to growth of ZnO films at different annealing temperatures (room temperature, 80, 100, 120 and 140 °C). The morphology of the films was investigated by Scanning Electron Microscope (SEM) and optical properties were studied by Ultraviolet (UV-Vis) Spectroscopy. SEM analysis showed ubiquitous growth of ZnO rods that became better aligned and more closely-packed as the annealing temperature increased. As the annealing temperature exceeds 100 °C, the rods tend to merge to adjacent particles and the UV absorption decreased for the sample at higher temperatures (120 °C and 140 °C). Good absorption and better orientation of ZnO was obtained for the sample annealed at 100 °C due to the film possess better distribution and these improved orientation of particles caused the light to be effectively scattered on the sample. Both surface morphology and UV was significantly affected by the change in annealing temperatures thus thermal effect played a dominant role in shaping and improving the orientation of ZnO rods on PMMA-coated and its UV absorption.

  11. The growth of ubiquitous ZnO rods on PMMA-coated substrate by solution-immersion method at different annealing temperatures

    NASA Astrophysics Data System (ADS)

    Aadila, A.; Asib, N. A. M.; Afaah, A. N.; Husairi, F. S.; Mohamed, R.; Rusop, M.; Khusaimi, Z.

    2016-07-01

    In this work, solution-immersion method was used to grow ZnO rods on PMMA-coated substrate. For this purpose, 0.15 M of zinc nitrate hexahydrate (Zn(NO3)2.6H2O) and hexamethylenetetramine (C6H12N4) were used to growth of ZnO films at different annealing temperatures (room temperature, 80, 100, 120 and 140 °C). The morphology of the films was investigated by Scanning Electron Microscope (SEM) and optical properties were studied by Ultraviolet (UV-Vis) Spectroscopy. SEM analysis showed ubiquitous growth of ZnO rods that became better aligned and more closely-packed as the annealing temperature increased. As the annealing temperature exceeds 100 °C, the rods tend to merge to adjacent particles and the UV absorption decreased for the sample at higher temperatures (120 °C and 140 °C). Good absorption and better orientation of ZnO was obtained for the sample annealed at 100 °C due to the film possess better distribution and these improved orientation of particles caused the light to be effectively scattered on the sample. Both surface morphology and UV was significantly affected by the change in annealing temperatures thus thermal effect played a dominant role in shaping and improving the orientation of ZnO rods on PMMA-coated and its UV absorption.

  12. Temperature-dependent morphological evolution of clustered gold surface

    NASA Astrophysics Data System (ADS)

    Kumar, Mukesh; Govind

    2012-07-01

    The present pragmatic deals with the surface morphology and the temperature induced modifications of gold surface. The gold surface consists of three dimensional (3D) large nanoclusters and the shape of these nanoclusters was identified as cap like structure with approximately circular periphery. The effect of temperature on the gold surface has been characterized by Scanning Tunnelling Microscopy technique. Annealing the gold surface at 473 K induce inter-diffusion of the 3D-nanoclusters, while the formation of nanoscale step and terrace morphology near the cluster boundary has been detected at 573 K. This study also reveals that the clusters size and roughness of gold surface varies differently in different range of annealing temperature.

  13. Employing hole-array recess of barrier layer of AlGaN/GaN Heterostructures to reduce annealing Temperature of Ohmic contact

    NASA Astrophysics Data System (ADS)

    Han, Kefeng

    2017-10-01

    Ohmic contact to AlGaN/GaN heterostructures employing hole-array recess of barrier layer is conducted in this paper, in which an Ohmic contact resistance of 0.2 Ωmm with an annealing temperature of 800 °C with 15 nm deep holes recessed on the AlGaN layer before annealing is obtained. The annealing temperature and metal morphology post annealing is compared between Ohmic contacts with and without hole array recess. The annealing temperature required for the Ohmic contact with hole recess to achieve minimum ohmic contact resistance is 40 °C lower when compared to an ordinary Ohmic contact without hole array recess. Additionally metal morphology is significantly improved, such as the reduction of irregular metal particles and metal bumps forming in the annealing process, smaller alloying grains, perfectly straight metal edge and no educts existing at metal sidewalls are realized. The results demonstrated in this paper are beneficial to the performance, yield and reliability of relevant devices and circuits.

  14. In-situ post-deposition thermal annealing of co-evaporated Cu(InGa)Se2 thin films deposited at low temperatures

    SciTech Connect

    Wilson, James D; McCandless, Brian E; Birkmire, Robert W; Shafarman, William N

    2009-06-09

    The effects of deposition temperature and in-situ post-deposition annealing on the microstructure of coevaporated Cu(InGa)Se2 thin films and on the performance of the resulting solar cell devices have been characterized. Films were deposited at substrate temperatures of 150°C, 300°C and 400°C. Films were also deposited at these temperatures and then annealed in-situ at 550°C for 10 minutes. In as -deposited films without annealing, additional XRD reflections that may be due to a polytypic modification of the chalcopyrite phase were observed. Films deposited at 150°C were Se-rich. Post-deposition annealing caused microstructural changes in all films and improved the resulting solar cells. Only films deposited at 400°C, however, yielded high-efficiency devices after post-deposition annealing that were equivalent to devices made from films grown at 550°C. Films originally deposited at 300°C yielded devices after post-deposition annealing with VOC close to that of devices made from films grown at 550°C, despite smaller grain size.

  15. Viviparity and temperature-dependent sex determination.

    PubMed

    Robert, K A; Thompson, M B

    2010-01-01

    Although temperature-dependent sex determination (TSD) has been a 'hot topic' for well over 30 years, the discovery of TSD in viviparous taxa is recent. Viviparity and TSD was regarded unlikely on theoretical grounds as viviparity allows for high stable developmental temperatures through maternal basking. However, pregnant squamates of many species choose different body temperatures from non-pregnant females and males, and we now know that differential temperature selection by viviparous species with TSD allows for the production of sons or daughters. Three species of squamate reptiles (all are skinks) are now know to exhibit TSD. The physiological mechanism by which viviparous reptiles control the sex of their offspring is not understood, but exposure to different operational sex ratios in the adult population is a factor in some species. The functional role of sex steroid hormones in egg yolk and how the hormones are manipulated in utero is still an area requiring detailed investigation. Fast maturing squamate reptiles provide an excellent, but as yet underutilized, model system for studying the adaptive significance of TSD, and the occurrence of TSD in viviparous species requires substantially more work on a phylogenetically diverse range of species.

  16. Selective synthesis of boron nitride nanotubes by self-propagation high-temperature synthesis and annealing process

    NASA Astrophysics Data System (ADS)

    Wang, Jilin; Zhang, Laiping; Zhao, Guowei; Gu, Yunle; Zhang, Zhanhui; Zhang, Fang; Wang, Weimin

    2011-09-01

    Four types of BN nanotubes are selectively synthesized by annealing porous precursor in flowing NH 3 and NH 3/H 2 atmosphere at temperature ranging from 1000 to 1200 °C in a vertical furnace. The as-synthesized BN nanotubes, including cylinder, wave-like, bamboo-like and bubble-chain, are characterized by XRD, FTIR, Raman, SEM, TEM and HRTEM. Three phenomenological growth models are proposed to interpret growth scenario and structure features of the four types of BN nanotubes. Selectivity of nanotubes formation is estimated as approximately 80-95%. The precursor containing B, Mg, Fe and O prepared by self-propagation high-temperature synthesis (SHS) method plays a key role in selective synthesis of the as-synthesized BN nanotubes. Chemical reactions are also discussed.

  17. Temperature dependent spin structures in Hexaferrite crystal

    NASA Astrophysics Data System (ADS)

    Chao, Y. C.; Lin, J. G.; Chun, S. H.; Kim, K. H.

    2016-01-01

    In this work, the Hexaferrite Ba0.5Sr1.5Zn2Fe12O22 (BSZFO) is studied due to its interesting characteristics of long-wavelength spin structure. Ferromagnetic resonance (FMR) is used to probe the magnetic states of BSZFO single crystal and its temperature dependence behavior is analyzed by decomposing the multiple lines of FMR spectra into various phases. Distinguished phase transition is observed at 110 K for one line, which is assigned to the ferro(ferri)-magnetic transition from non-collinear to collinear spin state.

  18. Effect of Annealing Temperature on the Structural and Optical Properties of Zinc Oxide (ZnO) Thin Films Prepared by Spin Coating Process

    NASA Astrophysics Data System (ADS)

    Sanjeev, Sandeep; Kekuda, Dhananjaya

    2015-02-01

    ZnO thin films were deposited onto the glass substrates by spin coating method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine (MEA) were used as starting materials for the thin film preparation. Films were obtained by spin coating at 4000 rpm for 30 sec at room temperature and were annealed at different temperatures ranging from 200°C to 400°C. The effect of annealing temperature on the structural and optical properties of the ZnO thin films was investigated. Surface morphology of thin films was studied using atomic force microscope (AFM). The optical absorbance and transmittance measurements were recorded by using a single beam spectrophotometer in the wavelength range 300 nm to 900 nm. Evaluated optical band gap value agrees approximately with that of bulk ZnO. It is observed that band gap decreases as the annealing temperature is increased from 200°C to 400°C.

  19. Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Zhao, Ziwen; Hu, Lizhong; Zhang, Heqiu; Sun, Jingchang; Bian, Jiming; Zhao, Jianze

    2011-03-01

    Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 °C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 °C showed strong acceptor-bound exciton (A 0X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum.

  20. Lamellar orientation in thin films of symmetric semicrytalline polystyrene-b-poly(ethylene-co-butene) block copolymers: effects of molar mass, temperature of solvent evaporation, and annealing.

    PubMed

    Liang, Guo-Dong; Xu, Jun-Ting; Fan, Zhi-Qiang

    2007-10-18

    Orientation of the lamellar microdomains in thin films of three symmetric polystyrene-b-poly(ethylene-co-butylene) block copolymers (S65E155, S156E358, and S199E452) on mica was investigated via atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD) and X-ray photoelectron spectroscopy (XPS). The results show that lamellar orientation in the SxEy block copolymers greatly depends on the molar mass of the block copolymers, the temperature of solvent evaporation, and annealing. The nascent thin film of the low molar mass block copolymer, S65E155, shows a multilayered structure parallel to the mica surface with the PS block at both polymer/mica and polymer/air interfaces, but the high molar mass block copolymers, S156E358 and S199E452, exhibit a structure with lamellar microdomains perpendicular to the mica surface. When the solvent is evaporated at a lower temperature, the crystallization rate is fast and a two-dimensional spherulite structure with the lamellar microdomains perpendicular to the mica surface is observed. Annealing of all the thin films with lamellar microdomains perpendicular to the mica surface leads to morphological transformation into a multilayered structure parallel to the mica surface. In all SxEy thin films on mica, the stems of PE crystals are always perpendicular to the interface between the lamellar PE and PS microdomains. A mechanism is proposed for the formation of different microdomain orientations in the thin films of semicrystalline block copolymers. When the thin film is prepared from a homogeneous solution, microdomains perpendicular to the substrate surface are formed rapidly for strongly segregated block copolymers or at a lower crystallization temperature and kinetically trapped by the strong segregation strength or solidification of crystallization, while for weakly segregated block copolymers or at slower crystallization rate, the orientation of the microdomains is dominated by surface selectivity.

  1. The effect of low-temperature annealing on ferromagnetic Ga1-xMnxAs thin films studied by photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Ji, C. J.; He, H. T.; Cao, X. C.; Qiu, K.; Zhong, F.; Li, X. H.; Han, Q. F.; Xu, F. Q.; Wang, J. N.; Wang, Y. Q.

    2007-06-01

    A systematic photoemission and variable temperature resistivity measurements are carried out on Ga0.946Mn0.054As ferromagnetic semiconductors. It is showed that the Mn 3d valence band and the As 3d core-level spectrum are modified by the annealing treatment. Correlating these modifications with the observed changes in the resistivity and Curie temperatures, we have identified that the low-temperature annealing most likely induces three changes: interstitial Mn out-diffusion, slight increase of the substitution Mn components, and reduction of excess As.

  2. [Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

    PubMed

    Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

    2014-07-01

    In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

  3. Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

    PubMed

    Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

    2010-03-01

    Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature.

  4. Influences of film thickness and annealing temperature on properties of sol-gel derived ZnO-SnO2 nanocomposite thin film

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Min; Joo, Young-Hee; Kim, Chang-Il

    2014-11-01

    In this study, ZnO-SnO2 nanocomposite thin film was prepared on glass substrates with different film thicknesses and annealing temperatures through a sol-gel method. From the results of thermogravimetric analysis (TGA), it was deduced that the ZnO-SnO2 thin film could be sufficiently formed at approximately 500 °C. The XRD patterns showed enhanced crystallinity of the ZnO-SnO2 thin film with increasing film thickness and annealing temperature. However, it was also revealed that the crystallinity deteriorated when the film thickness and annealing temperature are 270 nm and 700 °C, respectively. The variation in electrical resistivity corresponded to intensities of the (0 0 2) diffraction peaks shown in the XRD patterns. It was also found that the increase of film thickness and annealing temperature led to rougher surface morphology and to an increase in grain size. The optical properties deteriorated with increasing film thickness and annealing temperature of the ZnO-SnO2 thin films.

  5. Investigation of extended-gate field-effect transistor pH sensors based on different-temperature-annealed bi-layer MWCNTs-In2O3 films

    NASA Astrophysics Data System (ADS)

    Hung, Shang-Chao; Cheng, Nai-Jen; Yang, Cheng-Fu; Lo, Yuan-Pin

    2014-09-01

    In this paper, indium (In) films were deposited on glass substrates using DC sputtering method. Multiwalled carbon nanotubes (MWCNTs) and dispersant were dissolved in alcohol, and the mixed solution was deposited on the In films using the spray method. The bi-layer MWCNTs-In2O3 films were annealed at different temperatures (from room temperature to 500°C) in O2 atmosphere. The influences of annealing temperature on the characteristics of the bi-layer MWCNTs-In2O3 films were investigated by scanning electron microscopy, X-ray diffraction pattern, Fourier transform infrared (FT-IR) spectroscopy, and Raman spectroscopy. A separative extended-gate field-effect transistor (EGFET) device combined with a bi-layer MWCNTs-In2O3 film was constructed as a pH sensor. The influences of different annealing temperatures on the performances of the EGFET-based pH sensors were investigated. We would show that the pH sensitivity was dependent on the thermal oxygenation temperature of the bi-layer MWCNTs-In2O3 films.

  6. Investigation of extended-gate field-effect transistor pH sensors based on different-temperature-annealed bi-layer MWCNTs-In2O3 films

    PubMed Central

    2014-01-01

    In this paper, indium (In) films were deposited on glass substrates using DC sputtering method. Multiwalled carbon nanotubes (MWCNTs) and dispersant were dissolved in alcohol, and the mixed solution was deposited on the In films using the spray method. The bi-layer MWCNTs-In2O3 films were annealed at different temperatures (from room temperature to 500°C) in O2 atmosphere. The influences of annealing temperature on the characteristics of the bi-layer MWCNTs-In2O3 films were investigated by scanning electron microscopy, X-ray diffraction pattern, Fourier transform infrared (FT-IR) spectroscopy, and Raman spectroscopy. A separative extended-gate field-effect transistor (EGFET) device combined with a bi-layer MWCNTs-In2O3 film was constructed as a pH sensor. The influences of different annealing temperatures on the performances of the EGFET-based pH sensors were investigated. We would show that the pH sensitivity was dependent on the thermal oxygenation temperature of the bi-layer MWCNTs-In2O3 films. PMID:25288911

  7. The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

    NASA Astrophysics Data System (ADS)

    Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

    2017-09-01

    In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between polymer and silica nanoparticles were created. In order to examine the effect of annealing temperatures on chemical interactions and nanostructure properties, annealing process was done at 423-513 K. Atomic force microscopy (AFM) images show the very smooth surfaces with very low surface roughness (0.038-0.088 nm). The Si2p and C1s core level photoemission spectra were deconvoluted to the chemical environments of Si and C atoms respectively. The obtained results of deconvoluted X-ray photoelectron spectroscopy (XPS) spectra revealed a high percentage of silanol hydrogen bonds in the sample which was not annealed. These bonds were inversed to stronger covalence bonds (siloxan bonds) at annealing temperature of 423 K. By further addition of temperature, siloxan bonds were shifted to lower binding energy of about 1 eV and their intensity were abated at annealing temperature of 513 K. The electrical characteristics were extracted from current-Voltage (I-V) and capacitance-voltage (C-V) measurements in metal-insulator-semiconductor (MIS) structure. The all n-type Si transistors showed very low threshold voltages (-0.24 to 1 V). The formation of the strongest cross-linking at nanostructure of dielectric film annealed at 423 K caused resulted in an un-trapped path for the transport of charge carriers yielding the lowest threshold voltage (0.08 V) and the highest electron mobility (45.01 cm2/V s) for its FET. By increasing the annealing temperature (473 and 513 K) on the nanocomposite dielectric films, the values of the average surface roughness, the capacitance and the FET threshold voltage increased and the value of FET electron field-effect mobility decreased.

  8. Zero-temperature quantum annealing bottlenecks in the spin-glass phase

    NASA Astrophysics Data System (ADS)

    Knysh, Sergey

    2016-08-01

    A promising approach to solving hard binary optimization problems is quantum adiabatic annealing in a transverse magnetic field. An instantaneous ground state--initially a symmetric superposition of all possible assignments of N qubits--is closely tracked as it becomes more and more localized near the global minimum of the classical energy. Regions where the energy gap to excited states is small (for instance at the phase transition) are the algorithm's bottlenecks. Here I show how for large problems the complexity becomes dominated by O(log N) bottlenecks inside the spin-glass phase, where the gap scales as a stretched exponential. For smaller N, only the gap at the critical point is relevant, where it scales polynomially, as long as the phase transition is second order. This phenomenon is demonstrated rigorously for the two-pattern Gaussian Hopfield model. Qualitative comparison with the Sherrington-Kirkpatrick model leads to similar conclusions.

  9. Zero-temperature quantum annealing bottlenecks in the spin-glass phase

    PubMed Central

    Knysh, Sergey

    2016-01-01

    A promising approach to solving hard binary optimization problems is quantum adiabatic annealing in a transverse magnetic field. An instantaneous ground state—initially a symmetric superposition of all possible assignments of N qubits—is closely tracked as it becomes more and more localized near the global minimum of the classical energy. Regions where the energy gap to excited states is small (for instance at the phase transition) are the algorithm's bottlenecks. Here I show how for large problems the complexity becomes dominated by O(log N) bottlenecks inside the spin-glass phase, where the gap scales as a stretched exponential. For smaller N, only the gap at the critical point is relevant, where it scales polynomially, as long as the phase transition is second order. This phenomenon is demonstrated rigorously for the two-pattern Gaussian Hopfield model. Qualitative comparison with the Sherrington-Kirkpatrick model leads to similar conclusions. PMID:27491338

  10. Zero-temperature quantum annealing bottlenecks in the spin-glass phase.

    PubMed

    Knysh, Sergey

    2016-08-05

    A promising approach to solving hard binary optimization problems is quantum adiabatic annealing in a transverse magnetic field. An instantaneous ground state-initially a symmetric superposition of all possible assignments of N qubits-is closely tracked as it becomes more and more localized near the global minimum of the classical energy. Regions where the energy gap to excited states is small (for instance at the phase transition) are the algorithm's bottlenecks. Here I show how for large problems the complexity becomes dominated by O(log N) bottlenecks inside the spin-glass phase, where the gap scales as a stretched exponential. For smaller N, only the gap at the critical point is relevant, where it scales polynomially, as long as the phase transition is second order. This phenomenon is demonstrated rigorously for the two-pattern Gaussian Hopfield model. Qualitative comparison with the Sherrington-Kirkpatrick model leads to similar conclusions.

  11. Temperature dependence of the Casimir force

    NASA Astrophysics Data System (ADS)

    Brevik, Iver; Høye, Johan S.

    2014-01-01

    The Casimir force—at first, a rather unexpected consequence of quantum electrodynamics—was discovered by Hendrik Casimir in Eindhoven in 1948. It predicts that two uncharged metal plates experience an attractive force because of the zero-point fluctuations of the electromagnetic field. The idea was tested experimentally in the 1950s and 1960s, but the results were not so accurate that one could make a definite conclusion regarding the existence of the effect. Evgeny Lifshitz expanded the theory in 1955 so as to deal with general dielectric media. Much experimental work was later done to test the theory’s predictions, especially with regards to the temperature dependence of the effect. The existence of the effect itself was verified beyond doubt by Sabisky and Anderson in 1973. Another quarter century had to pass before Lamoreaux and collaborators were able to confirm—or at least make plausible—the temperature dependence predicted by Lifshitz formula in combination with reasonable input data for the material’s dispersive properties. The situation is not yet clear-cut, however, there are recent experiments indicating results in disagreement with those of Lamoreaux. In this paper, a brief review is given of the status of this research field.

  12. Effect of post thermal annealing on the structural and optical properties of ZnO thin films prepared from polymer precursor

    NASA Astrophysics Data System (ADS)

    Mathew, Jijoy P.; Mathew, Jacob; Varghese, George

    2012-06-01

    ZnO thin films were synthesized in a new method which uses Polyvinyl Alcohol (PVA) as polymer precursor. The films are annealed at different temperatures to study the effect of post thermal annealing on the structural and optical properties of grown films. It was found that all the films possess tensile strain which increases as annealing temperature increases. The structural parameters like grain size, lattice constants, optical band gap and Urbach energy depend on the annealing temperature.

  13. Escherichia coli survival in waters: temperature dependence.

    PubMed

    Blaustein, R A; Pachepsky, Y; Hill, R L; Shelton, D R; Whelan, G

    2013-02-01

    Knowing the survival rates of water-borne Escherichia coli is important in evaluating microbial contamination and making appropriate management decisions. E. coli survival rates are dependent on temperature, a dependency that is routinely expressed using an analogue of the Q₁₀ model. This suggestion was made 34 years ago based on 20 survival curves taken from published literature, but has not been revisited since then. The objective of this study was to re-evaluate the accuracy of the Q₁₀ equation, utilizing data accumulated since 1978. We assembled a database of 450 E. coli survival datasets from 70 peer-reviewed papers. We then focused on the 170 curves taken from experiments that were performed in the laboratory under dark conditions to exclude the effects of sunlight and other field factors that could cause additional variability in results. All datasets were tabulated dependencies "log concentration vs. time." There were three major patterns of inactivation: about half of the datasets had a section of fast log-linear inactivation followed by a section of slow log-linear inactivation; about a quarter of the datasets had a lag period followed by log-linear inactivation; and the remaining quarter were approximately linear throughout. First-order inactivation rate constants were calculated from the linear sections of all survival curves and the data grouped by water sources, including waters of agricultural origin, pristine water sources, groundwater and wells, lakes and reservoirs, rivers and streams, estuaries and seawater, and wastewater. Dependency of E. coli inactivation rates on temperature varied among the water sources. There was a significant difference in inactivation rate values at the reference temperature between rivers and agricultural waters, wastewaters and agricultural waters, rivers and lakes, and wastewater and lakes. At specific sites, the Q₁₀ equation was more accurate in rivers and coastal waters than in lakes making the value of

  14. Deposition and characterization of high temperature superconducting YBa2Cu3O7-δ films obtained by DC magnetron sputtering and thermal annealing modification

    NASA Astrophysics Data System (ADS)

    Beshkova, M.; Blagoev, B.; Kovacheva, D.; Mladenov, G.; Nurgaliev, T.

    2008-05-01

    C-axis oriented 100-nm thick YBCO films were deposited on LaAlO3 (100) substrates at substrate temperature of 780°C in a mixed oxygen/argon atmosphere (1:3) of 0.3 Torr by DC off-axis magnetron sputtering. The samples deposited were thermally annealed in oxygen ambient of 600 Torr at 530°C for 40 min. Superconductivity with zero resistance 89.1K was observed for the YBCO films after annealing. These results show that thermal annealing is an important technique for improving the parameters of thin superconducting films. A correlation between the YBCO layers properties before and after annealing was established.

  15. Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon

    NASA Astrophysics Data System (ADS)

    Riahi, R.; Derbali, L.; Ouertani, B.; Ezzaouia, H.

    2017-05-01

    This paper investigates the effect of Nickel oxide (NiO) on the structural and optical properties of porous silicon (PS). Our investigations showed an obvious improvement of porous silicon optoelectronique properties after coating the PS with NiO thin film as a passivating process. The as-prepared NiO/PS thin film was subjected to a thermal annealing to study the effect of temperature on the efficiency of this treatment. The deposition of NiO onto the porous silicon layer was performed using the spray pyrolysis method. The surface modification of the as-prepared NiO/PS samples was investigated after annealing at various temperatures, using an infrared furnace, ranging between 300 °C and 600 °C. The X-ray Diffraction results showed that obtained films show cubic structure with preferred (200) plane orientation. We found an obvious dependence of the PS nanocrystallites size (nc-Si) to the annealing temperature. Photoluminescence (PL) is directly related to the electronic structure and transitions. The characteristic change of the band gap with decrease in size of the nanostructures can be pointed out by the observed blue shift in the photoluminescence spectra. Nickel oxide treatment of Porous silicon led to a significant increase of photoluminescence with a resulting blue-shift at higher annealing temperature. The surface morphology was examined by scanning electron microscope (SEM), and FTIR spectroscopy was used to study the chemical composition of the films. Moreover, the total reflectivity of NiO/PS samples decreases noticeably comparing to an untreated PS layer due to an enhanced light absorption.

  16. Evolution of nitrogen structure in N-doped diamond crystal after high pressure and high temperature annealing treatment

    NASA Astrophysics Data System (ADS)

    Zheng, You-Jin; Huang, Guo-Feng; Li, Zhan-Chang; Zuo, Gui-Hong

    2014-11-01

    In this paper, we have reported an investigation on the evolution of nitrogen structures in diamond crystals which contain nitrogen donor atoms in the range of 1500 ppm-1600 ppm following an annealing treatment at a high pressure of about 6.5 GPa and high temperatures of 1920 K-2120 K. The annealing treatment was found to completely transform nitrogen atoms originally arranged in a single substitutional form (C-center), into a pair form (A-center), indicated from infrared (IR) spectra. The photoluminescence (PL) spectra revealed that a small fraction of nitrogen atoms remained in C-center form, while some nitrogen atoms in A-center form were further transformed into N3 and H3 center structures. In addition, PL spectra have revealed the existence of two newly observed nitrogen-related structures with zero phonon lines at 611 nm and 711 nm. All these findings above are very helpful in understanding the formation mechanism of natural diamond stones of the Ia-type, which contains nitrogen atoms in an aggregated form.

  17. Fast wettability transition from hydrophilic to superhydrophobic laser-textured stainless steel surfaces under low-temperature annealing

    NASA Astrophysics Data System (ADS)

    Ngo, Chi-Vinh; Chun, Doo-Man

    2017-07-01

    Recently, the fabrication of superhydrophobic metallic surfaces by means of pulsed laser texturing has been developed. After laser texturing, samples are typically chemically coated or aged in ambient air for a relatively long time of several weeks to achieve superhydrophobicity. To accelerate the wettability transition from hydrophilicity to superhydrophobicity without the use of additional chemical treatment, a simple annealing post process has been developed. In the present work, grid patterns were first fabricated on stainless steel by a nanosecond pulsed laser, then an additional low-temperature annealing post process at 100 °C was applied. The effect of 100-500 μm step size of the textured grid upon the wettability transition time was also investigated. The proposed post process reduced the transition time from a couple of months to within several hours. All samples showed superhydrophobicity with contact angles greater than 160° and sliding angles smaller than 10° except samples with 500 μm step size, and could be applied in several potential applications such as self-cleaning and control of water adhesion.

  18. The effects of annealing temperature on structure and photoluminescence of SiC/AlN bilayer thin film

    NASA Astrophysics Data System (ADS)

    He, Xiao-xiong; Li, He-qin; Fan, Wen-bin; Do, Zhi

    2010-10-01

    The SiC/AlN bilayer thin films were grown by RF magnetron sputtering on the silicon(100)substrate, then were annealed from 500°C to 1000°C through the nitrogen gas. The optimum synthetic process was obtained, that is, the gas pressure was 0.5Pa, the flux of Ar was 60sccm, the sputtering power of SiC target was 150W for 1.5hr, while the sputtering power of pure Al target was 100W for 1hr, and the ratio of Ar to N2 was 2:1. Next the XRD, AFM and photoluminescence (PL) spectra of these films were measured with D/Max-γB X-ray diffraction and FL-4500 Fluorometric meter. Two PL emission peaks were observed respectively around 381nm and 400nm, and they came from the SiC particles and the carbon clusters respectively. The intensity of PL emission rises with the increasing of annealing temperature. The PL emission intensity of SiC/AlN bilayer thin film at 381nm is superior to SiC monolayer thin film while the that of SiC/AlN bilayer at 400 nm is inferior to SiC monolayer thin film. In addition to, the grain size of SiC/AlN bilayer thin film is finer than that of SiC monolayer thin film resulting from AFM morphology.

  19. Observation of exchanging role of gold and silver nanoparticles in bimetallic thin film upon annealing above the glass transition temperature

    NASA Astrophysics Data System (ADS)

    Htet Kyaw, Htet; Tay Zar Myint, Myo; Hamood Al-Harthi, Salim; Maekawa, Toru; Yanagisawa, Keiichi; Sellai, Azzouz; Dutta, Joydeep

    2017-08-01

    The exchange role of gold (Au) and silver (Ag) in bimetallic films co-evaporated onto soda-lime glass substrates with Au-Ag volume ratios of 1:2, 1:1 and 2:1 have been demonstrated. Annealing of the films above the glass transition temperature in air led to non-alloying nature of the films, silver neutrals (Ag0) and gold nanoparticles (AuNPs) on the surface, along with silver nanoparticles (AgNPs) inside the glass matrix. Moreover, the size distribution and interparticle spacing of the AuNPs on the surface were governed by the Ag content in the deposited film. In contrast, the content of Au in the film played an opposite role leading to the migration of Ag ions (i.e. Ag0 being transformed to Ag ions after annealing in oxygen ambient) to form AgNPs inside the glass matrix. The higher the Au content in the film is, the more likely Ag0 to stay on the surface and impacts on the size distribution of AuNPs and consequently on the refractive index sensitivity measurements. Experimental realisation of this fact was reflected from the best performance for localized surface plasmon resonance (LSPR) sensitivity test achieved with Au-Ag ratio of 1:2. The Au/Ag/glass bimetallic dynamic results of this study can be pertinent to sensor applications integrated with optical devices.

  20. Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

    PubMed

    Sadowski, Janusz; Domagala, Jaroslaw Z; Mathieu, Roland; Kovacs, Andras; Dłużewski, Piotr

    2013-05-15

    The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 °C annealing and diffuse throughout the GaAs spacer layers at 630 °C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.

  1. Effects of the annealing temperature and time on the microstructural evolution and corresponding the mechanical properties of cold-drawn steel wires

    NASA Astrophysics Data System (ADS)

    Park, D. B.; Lee, J. W.; Lee, Y. S.; Park, K. T.; Nam, W. J.

    2008-02-01

    The effects of the annealing temperature and annealing time on the microstructural evolution and corresponding mechanical properties of cold-drawn high carbon steel wires were investigated. During the annealing of cold-drawn steel wires, the increment of the tensile strength at low temperatures found to be due to age hardening, while the decrease in the tensile strength at high temperatures was attributed to age softening, involving the spheroidization of lamellar cementite and recovery of lamellar ferrite. To investigate the mechanisms of strain ageing, a thermal analysis using DSC was performed. The mechanisms for the first and second stages were found to be the diffusion of carbon atoms to dislocations in the lamellar ferrite and the decomposition of lamellar cementite. The third peak of the DSC curves was controlled by the re-precipitation of cementite or by the spheroidization of lamellar cementite.

  2. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    NASA Astrophysics Data System (ADS)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  3. Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

    NASA Astrophysics Data System (ADS)

    Li, Yali; Li, Chunyang; He, Deyan; Li, Junshuai

    2009-05-01

    We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ~4.6 × 10-4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ~1.21 × 1021 cm-3 and a lower mobility of ~11.4 cm2 V-1 s-1. More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

  4. Transparent Conductive Cu-doped ZnSe Film Deposited at Room Temperature Using Compound Sources Followed by Laser Annealing

    NASA Astrophysics Data System (ADS)

    Orita, Masahiro; Narushima, Takashi; Yanagita, Hiroaki

    2007-10-01

    The evaporation of ZnSe and Cu2Se powders was used to deposit a Cu-doped ZnSe film on a glass substrate at room temperature; this was followed by laser beam (λ = 355 nm) annealing. The film consisted of a zinc blende, ZnSe, crystalline single phase with the chemical composition (Zn0.9Cu0.1)Se. Over 70% optical transmittance was obtained in the green-red region. The film had a p-type polarity with a conductivity of 0.45 S cm-1 and a workfunction of 4.7 eV. P-n diodes fabricated with the film on an n-type ZnSe:Cl layer showed rectangular behavior with a small turn-on voltage of ˜1.5 V, which is plausibly explained by development of an impurity band.

  5. Lithium phosphorus oxynitride solid-state thin-film electrolyte deposited and modified by bias sputtering and low temperature annealing

    SciTech Connect

    Chiu, K.-F.; Chen, C. C.; Lin, K. M.; Lo, C. C.; Lin, H. C.; Ho, W.-H.; Jiang, C. S.

    2010-07-15

    Amorphous lithium phosphorus oxynitride (LiPON) solid-state thin-film electrolyte has been deposited and characterized. The thin films were prepared by rf magnetron sputtering under various substrate biases. By fabricating under different substrate biases and applying low temperature annealing (473 K), the properties of the LiPON thin-film electrolytes and the electrolyte/cathode interfaces were modified. The ionic conductivity as high as 9.4x10{sup -4} S m{sup -1} can be obtained by depositing at optimal bias. The performances of the consequently fabricated SnO{sub 2}/LiPON/LiMn{sub 2}O{sub 4} all-solid-state lithium ion thin-film batteries were improved using the bias sputtering technique, due to the enhanced the ionic conductivity and uniform interface.

  6. The influence of fluorine on boron-enhanced diffusion in silicon by BF{sub 2}{sup +} implantation through oxide during high temperature rapid thermal anneal

    SciTech Connect

    Wang, L.Z.; Luo, M.S.C.; Tseng, H.H.; Ajuria, S.A.

    1997-11-01

    BF{sub 2}{sup +} implantation through a sacrificial oxide for the formation of p{sup +}/n shallow junctions is frequently applied in device fabrication. The effects of fluorine on boron diffusion in and out of a silicon substrate during nitrogen-ambient high temperature rapid thermal annealing have been studied. By comparing B and BF{sub 2} implanted substrates, it is shown that fluorine out-diffusion during high temperature annealing coincides with enhanced boron out-diffusion into the oxide and suppressed boron diffusion into the substrate. In particular, when fluorine accumulated at the end of range dislocation loops is driven out of the bulk, shallower junctions are observed.

  7. Vanadium dioxide thin films prepared on silicon by low temperature MBE growth and ex-situ annealing

    NASA Astrophysics Data System (ADS)

    Homm, Pia; van Bilzen, Bart; Menghini, Mariela; Locquet, Jean-Pierre; Ivanova, Todora; Sanchez, Luis; Sanchis, Pablo

    Vanadium dioxide (VO2) is a material that shows an insulator to metal transition (IMT) near room temperature. This property can be exploited for applications in field effect devices, electro-optical switches and nonlinear circuit components. We have prepared VO2 thin films on silicon wafers by combining a low temperature MBE growth with an ex-situ annealing at high temperature. We investigated the structural, electrical and optical characteristics of films with thicknesses ranging from 10 to 100 nm. We have also studied the influence of the substrate cleaning. The films grown with our method are polycrystalline with a preferred orientation in the (011) direction of the monoclinic phase. For the films produced on silicon with a native oxide, an IMT at around 75 °C is observed. The magnitude of the resistance change across the IMT decreases with thickness while the refractive index at room temperature corresponds with values reported in the literature for thin films. The successful growth of VO2 films on silicon with good electrical and optical properties is an important step towards the integration of VO2 in novel devices. The authors acknowledge financial support from the FWO project G052010N10 and EU-FP7 SITOGA project. PH acknowledges support from Becas Chile - CONICYT.

  8. Temperature dependent nonlinear metal matrix laminae behavior

    NASA Technical Reports Server (NTRS)

    Barrett, D. J.; Buesking, K. W.

    1986-01-01

    An analytical method is described for computing the nonlinear thermal and mechanical response of laminated plates. The material model focuses upon the behavior of metal matrix materials by relating the nonlinear composite response to plasticity effects in the matrix. The foundation of the analysis is the unidirectional material model which is used to compute the instantaneous properties of the lamina based upon the properties of the fibers and matrix. The unidirectional model assumes that the fibers properties are constant with temperature and assumes that the matrix can be modelled as a temperature dependent, bilinear, kinematically hardening material. An incremental approach is used to compute average stresses in the fibers and matrix caused by arbitrary mechanical and thermal loads. The layer model is incorporated in an incremental laminated plate theory to compute the nonlinear response of laminated metal matrix composites of general orientation and stacking sequence. The report includes comparisons of the method with other analytical approaches and compares theoretical calculations with measured experimental material behavior. A section is included which describes the limitations of the material model.

  9. The effect of annealing temperatures to prepare ZnO seeds layer on ZnO nanorods array/TiO2 nanoparticles photoanode

    NASA Astrophysics Data System (ADS)

    Chou, Hsueh-Tao; Hsu, Ho-Chun

    2016-02-01

    In this study, we have fabricated a ZnO nanorods array/TiO2 nanoparticles thin-film as a photoanode, and also investigated the annealing effect at various temperatures (as grown, 250 °C, 350 °C, 450 °C and 550 °C) on ZnO seeds layer. The material properties of ZnO nanorods array were investigated by field emission scanning electron microscopy (FE-SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and ultraviolet visible spectroscopy. Besides, the performances of solar cells were evaluated using a source meter (Keithley 2400), which included open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (F.F.) and power conversion efficiency (η%) at one sun (A.M. 1.5G, 100 mW/cm2). The electrochemical properties of the cells were analyzed by electrochemical impedance spectroscopy (EIS). From the EIS results, the cell performances were affected by annealing temperature, especially the fill-factor, at an annealing temperature of 550 °C due to the annealing treatment can enhance the connection between the interfaces of ZnO seeds/TCO, improving the electron lifetime, reducing the electron recombination loss. Finally, the sample annealing at 550 °C has the highest fill-factor of 44, power conversion efficiency of 0.19%, the highest Rct2 of 162.8 Ω and long electron lifetime of 7.25 ms.

  10. Study the Effect of Annealing Temperature on Optical and Structural Properties of Zinc Oxide Thin Film Prepared by Thermal Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Adawiah, R.; Rafaie, H. A.; Rusop, M.

    2009-06-01

    Zinc oxide (ZnO) thin films deposited on silicon and glass substrate were prepared using chemical vapor deposition (CVD) method utilizing zinc acetate dihydrate as the zinc sources. The deposited film then annealed at 300° C to 500° C for 1 hour. The optical and structural properties of ZnO thin films were characterized using photoluminescence (PL) and Scanning Electron Microscopy (SEM) respectively. SEM images show that the ZnO thin film on silicon substrate formed unique morphology of flower-like and ball-shaped structures at annealing temperature 300° C and 400° C. Increasing annealing temperature to 450° C for ZnO deposited on glass substrate had increased the grain size of particle which implies the improvement of crystalline grain of thin film. PL results observed that the defect of oxygen vacancy decreased after annealing process for films deposited on silicon substrate. The blue peak emission at 437 nm appears only on the glass substrate. Based on the highest PL intensity value, the optimum annealing temperature for silicon and glass substrate is 350° C and 450° C respectively.

  11. Temperature Dependence of DNA Charge Transport

    NASA Astrophysics Data System (ADS)

    Wohlgamuth, Chris; McWilliams, Marc; Slinker, Jason

    2011-10-01

    Charge transport (CT) through DNA has been extensively studied, and yet the mechanism of this process is still not yet fully understood. DNA CT has been utilized in sensing proteins and DNA fragments, and it has been postulated that it may assist DNA damage prevention and repair. Besides the benefits of understanding charge transport through this fundamental molecule, further understanding of this process will elucidate the biological implications of DNA CT and advance sensing technology. Therefore, we have investigated the temperature dependence of DNA CT by measuring the electrochemistry of DNA monolayers modified with a redox-active probe. By using multiplexed electrodes on silicon chips, we compare the cyclic and square wave voltammetry of distinct DNA sequences under identical experimental conditions. Accordingly, we compare well matched DNA duplexes to those containing a single base pair mismatch, which has been shown to attenuate CT. The yield of CT is shown to follow Arrhenius behavior, with increased activation energies for mismatches that structurally distort the duplex. These observations suggest that charge transport is thermally activated and highly dependent upon DNA conformation.

  12. Time- and temperature-dependent cation ordering in synthetic Mg- and Al-substituted titanomagnetites

    NASA Astrophysics Data System (ADS)

    Lappe, S. L.; Bowles, J. A.; Jackson, M. J.

    2013-12-01

    The thermoremanent magnetization (TRM) of titanomagnetites (TM) (Fe3-xTixO4, 0 ≤ x ≤ 1) is a vital source of information about geomagnetic field history and tectonic plate motions. Seafloor basalts containing TM60 (x = 0.6) are the principal source of data for the geomagnetic polarity timescale for post-Paleozoic time, as well as providing important records of shorter-period paleofield variations. The vast majority of absolute paleointensity data and a significant fraction of paleodirectional data is derived from TM-bearing lava flows. For proper analyses and interpretations of these data, we rely on a thorough understanding of the magnetic mineralogy and the physical mechanisms involved. Yet there are fundamental aspects of titanomagnetite mineral magnetism that remain inadequately understood, particularly concerning the arrangement of cations in the crystal structure, changes in cation distribution with temperature, and resulting changes in important magnetic properties. Newly acquired data [Bowles et al. 2013] strongly suggests that natural titanomagnetites showing cation substitution of Mg2+ and Al3+ undergo temperature-dependent cation ordering at moderate temperatures (300-500°C) and over timescales of hours to months. The ordering/disordering process has profound effects on magnetic properties including Curie temperature, TC, (which varies by >150°C) and has major implications for the acquisition, retention, and demagnetization of partial thermoremanence and thermoviscous remanence. To better understand the exact mechanism at work in the natural samples we have synthesized titanomagnetites of varying compositions and with varying degrees of cation substitution of Mg2+ and Al3+. For this purpose powders of Fe2O3, TiO2, Fe, MgO and Al2O3 were ground up together under acetone, tightly packed into silver capsules and annealed in evacuated quartz at 900°C for 7 days. X-ray powder diffraction data prove the formation of titanomagnetite. Initial Curie

  13. Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n-type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Ramesha, C. K.; Rajagopal Reddy, V.

    2014-12-01

    We have investigated the electrical and structural properties of Pd/4H-SiC Schottky diodes as a function of annealing temperature using I-V, C-V, AES and XRD measurements. The barrier height (BH) of the as-deposited Pd/4H-SiC Schottky diode is found to be 0.71 eV (I-V) and 1.18 eV (C-V), respectively. When the Pd/4H-SiC Schottky diode is annealed at 300 °C, a maximum BH is achieved and corresponding values are 0.89 eV (I-V) and 1.30 eV (C-V). Further, an increase in annealing temperature up to 400 °C, the BH decreases to 0.81 eV (I-V) and 1.20 eV (C-V). Using Cheung's functions, the barrier height (ϕb), ideality factor (n), and series resistance (Rs) are also calculated. Experimental results clearly indicate that the optimum annealing temperature for the Pd Schottky contact to 4H-SiC is 300 °C. According to the Auger electron spectroscopy (AES) and X-ray diffraction (XRD) results, the formation of interfacial phases at the Pd/4H-SiC interface could be the reason for the increase or decrease in BH upon annealing at elevated temperatures. The overall surface morphology of the Pd/4H-SiC Schottky diode is fairly smooth upon annealing temperatures.

  14. Room temperature ferromagnetism in Cr-doped In2O3 on high vacuum annealing of thin films and bulk samples

    NASA Astrophysics Data System (ADS)

    Kharel, P.; Sudakar, C.; Sahana, M. B.; Lawes, G.; Suryanarayanan, R.; Naik, R.; Naik, V. M.

    2007-05-01

    We report on the observation of room temperature ferromagnetism in Cr-doped In2O3 bulk samples and spin-coated thin films. The samples showed a clear ferromagnetism above 300K with magnetic moments of 0.008 and 0.22μB/Cr at 300K for the bulk and thin film, respectively, only after high vacuum (HV) annealing at 600°C. The vacuum annealed Cr-doped In2O3 thin films showed a typical semiconducting behavior with a room temperature resistivity of 0.73Ωcm, while bulk samples were more conducting (23mΩcm). We present systematic investigations on the influence of HV annealing on the carrier concentrations, resistivity, and magnetic properties of the samples.

  15. Investigation of high temperature annealing effectiveness for recovery of radiation-induced structural changes and properties of 18Cr-10Ni-Ti austenitic stainless steels

    NASA Astrophysics Data System (ADS)

    Gurovich, B. A.; Kuleshova, E. A.; Frolov, A. S.; Maltsev, D. A.; Prikhodko, K. E.; Fedotova, S. V.; Margolin, B. Z.; Sorokin, A. A.

    2015-10-01

    A complex study of structural state and properties of 18Cr-10Ni-Ti austenitic stainless steel after irradiation in BOR-60 fast research reactor (in the temperature range 330-400 °С up to damaging doses of 145 dpa) and in VVER-1000 light water reactor (at temperature ∼320 °С and damaging doses ∼12-14 dpa) was performed. The possibility of recovery of structural-phase state and mechanical properties to the level almost corresponding to the initial state by the recovery annealing was studied. The principal possibility of the recovery annealing of pressurized water reactor internals that ensures almost complete recovery of its mechanical properties and microstructure was shown. The optimal mode of recovery annealing was established: 1000 °C during 120 h.

  16. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    NASA Astrophysics Data System (ADS)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  17. Evolution of the interfacial magnetic anisotropy in MgO/CoFeB/Ta/Ru based multilayers as a function of annealing temperature

    SciTech Connect

    Aleksandrov, Yuriy Kowalska, Ewa; Fowley, Ciarán; Sluka, Volker; Yıldırım, Oğuz; Lindner, Jürgen; Fassbender, Jürgen; Deac, Alina M.; Ocker, Berthold

    2016-06-15

    We report the effect of annealing temperature on the dynamic and static magnetic properties of MgO/CoFeB/Ta/Ru multilayers. Angular resolved ferromagnetic resonance measurement results show that the as-deposited film exhibits in-plane magnetic anisotropy, whereas in the annealed films the magnetic easy-axis is almost along the direction perpendicular to the plane of the layers. The extracted interfacial anisotropy energy, K{sub i}, is maximized at an annealing temperature 225{sup ∘}C, in agreement with the vibrating sample magnetometry results. Although the magnetization is not fully out-of-plane, controlling the degree of the magnetization obliqueness may be advantageous for specific applications such as spin-transfer oscillators.

  18. The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

    SciTech Connect

    Ahn, Byung Du; Choi, Dong-won Choi, Changhwan; Park, Jin-Seong

    2014-09-01

    We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO{sub 2} films as a function of the annealing temperature. The ZTO and ZnO, except for SnO{sub 2}, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 °C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 °C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm{sup 2}/V s and a negative bias instability of −0.2 V.

  19. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    PubMed

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  20. Control of antiferromagnetic domain distribution via polarization-dependent optical annealing

    PubMed Central

    Higuchi, Takuya; Kuwata-Gonokami, Makoto

    2016-01-01

    The absence of net magnetization inside antiferromagnetic domains has made the control of their spatial distribution quite challenging. Here we experimentally demonstrate an optical method for controlling antiferromagnetic domain distributions in MnF2. Reduced crystalline symmetry can couple an order parameter with non-conjugate external stimuli. In the case of MnF2, time-reversal symmetry is macroscopically broken reflecting the different orientations of the two magnetic sublattices. Thus, it exhibits different absorption coefficients between two orthogonal linear polarizations below its antiferromagnetic transition temperature under an external magnetic field. Illumination with linearly polarized laser light under this condition selectively destructs the formation of a particular antiferromagnetic order via heating. As a result, the other antiferromagnetic order is favoured inside the laser spot, achieving spatially localized selection of an antiferromagnetic order. Applications to control of interface states at antiferromagnetic domain boundaries, exchange bias and control of spin currents are expected. PMID:26911337

  1. Control of antiferromagnetic domain distribution via polarization-dependent optical annealing.

    PubMed

    Higuchi, Takuya; Kuwata-Gonokami, Makoto

    2016-02-25

    The absence of net magnetization inside antiferromagnetic domains has made the control of their spatial distribution quite challenging. Here we experimentally demonstrate an optical method for controlling antiferromagnetic domain distributions in MnF2. Reduced crystalline symmetry can couple an order parameter with non-conjugate external stimuli. In the case of MnF2, time-reversal symmetry is macroscopically broken reflecting the different orientations of the two magnetic sublattices. Thus, it exhibits different absorption coefficients between two orthogonal linear polarizations below its antiferromagnetic transition temperature under an external magnetic field. Illumination with linearly polarized laser light under this condition selectively destructs the formation of a particular antiferromagnetic order via heating. As a result, the other antiferromagnetic order is favoured inside the laser spot, achieving spatially localized selection of an antiferromagnetic order. Applications to control of interface states at antiferromagnetic domain boundaries, exchange bias and control of spin currents are expected.

  2. Control of antiferromagnetic domain distribution via polarization-dependent optical annealing

    NASA Astrophysics Data System (ADS)

    Higuchi, Takuya; Kuwata-Gonokami, Makoto

    2016-02-01

    The absence of net magnetization inside antiferromagnetic domains has made the control of their spatial distribution quite challenging. Here we experimentally demonstrate an optical method for controlling antiferromagnetic domain distributions in MnF2. Reduced crystalline symmetry can couple an order parameter with non-conjugate external stimuli. In the case of MnF2, time-reversal symmetry is macroscopically broken reflecting the different orientations of the two magnetic sublattices. Thus, it exhibits different absorption coefficients between two orthogonal linear polarizations below its antiferromagnetic transition temperature under an external magnetic field. Illumination with linearly polarized laser light under this condition selectively destructs the formation of a particular antiferromagnetic order via heating. As a result, the other antiferromagnetic order is favoured inside the laser spot, achieving spatially localized selection of an antiferromagnetic order. Applications to control of interface states at antiferromagnetic domain boundaries, exchange bias and control of spin currents are expected.

  3. Thickness-dependent crystallization on thermal anneal for titania/silica nm-layer composites deposited by ion beam sputter method.

    PubMed

    Pan, Huang-Wei; Wang, Shun-Jin; Kuo, Ling-Chi; Chao, Shiuh; Principe, Maria; Pinto, Innocenzo M; DeSalvo, Riccardo

    2014-12-01

    Crystallization following thermal annealing of thin film stacks consisting of alternating nm-thick titania/silica layers was investigated. Several prototypes were designed, featuring a different number of titania/silica layer pairs, and different thicknesses (in the range from 4 to 40 nm, for the titania layers), but the same nominal refractive index (2.09) and optical thickness (a quarter of wavelength at 1064 nm). The prototypes were deposited by ion beam sputtering on silicon substrates. All prototypes were found to be amorphous as-deposited. Thermal annealing in air at progressive temperatures was subsequently performed. It was found that the titania layers eventually crystallized forming the anatase phase, while the silica layers remained always amorphous. However, progressively thinner layers exhibited progressively higher threshold temperatures for crystallization onset. Accordingly it can be expected that composites with thinner layers will be able to sustain higher annealing temperatures without crystallizing, and likely yielding better optical and mechanical properties for advanced coatings application. These results open the way to the use of materials like titania and hafnia, that crystallize easily under thermal anneal, but ARE otherwise promising candidate materials for HR coatings necessary for cryogenic 3rd generation laser interferometric gravitational wave detectors.

  4. Effect of high temperature swaging and annealing on the mechanical properties and thermal conductivity of W-Y2O3

    NASA Astrophysics Data System (ADS)

    Xie, Z. M.; Liu, R.; Miao, S.; Zhang, T.; Wang, X. P.; Fang, Q. F.; Liu, C. S.; Luo, G. N.

    2015-09-01

    The mechanical properties and thermal conductivity of W-1.0 wt%Y2O3 (WY10) alloys prepared by spark plasma sintering (SPS) as well as ordinary sintering followed by swaging and annealing treatment, respectively, were investigated. The grains in the swaged WY10 are of round-bar shape with average diameter and length of 4.6 and 26.7 μm, respectively, which keep stable even after being annealed for 1 h at 1300 °C. The ductile-brittle transition temperature (DBTT) of swaged and annealed WY10 is about 200 °C, much lower than that of WY10 prepared by SPS method (∼500 °C). Annealing significantly improves thermal conductivity from 146 to 198 W/m K at room temperature. In addition, the total elongation is raised by 5.7 times than that of the unannealed one. The results indicate that the strength, ductility and thermal conductivity can be greatly improved by swaging and subsequent annealing.

  5. Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance

    NASA Astrophysics Data System (ADS)

    Globisch, B.; Dietz, R. J. B.; Nellen, S.; Göbel, T.; Schell, M.

    2016-12-01

    The influence of post-growth annealing on the electrical properties, the transient carrier dynamics and the performance as THz photoconductive receiver of Beryllium (Be) doped InGaAs/InAlAs multilayer heterostructures grown at 130 °C in a molecular beam epitaxy (MBE) system was investigated. We studied samples with nominally Be doping concentrations of 8 ×10 17 cm-3 - 1.2 ×1019 cm3 annealed for 15 min. - 120 min. at temperatures between 500 °C - 600 °C. In contrast to previous publications, the results show consistently that annealing increases the electron lifetime of the material. In analogy to the annealing properties of low-temperature grown (LTG) GaAs we explain our findings by the precipitation of arsenic antisite defects. The knowledge of the influence of annealing on the material properties allowed for the fabrication of broadband THz photoconductive receivers with an electron lifetime below 300 fs and varying electrical properties. We found that the noise of the detected THz pulse trace in time-domain spectroscopy (TDS) was directly determined by the resistance of the photoconductive receiver and the peak-to-peak amplitude of the THz pulse correlated with the electron mobility.

  6. Temperature dependence of sensitized Er(3+) luminescence in silicon-rich oxynitride films.

    PubMed

    Xu, Lingbo; Li, Si; Jin, Lu; Li, Dongsheng; Yang, Deren

    2014-01-01

    The temperature dependence of sensitized Er(3+) emission via localized states and silicon nanoclusters has been studied to get an insight into the excitation and de-excitation processes in silicon-rich oxynitride films. The thermal quenching of Er(3+) luminescence is elucidated by terms of decay time and effective excitation cross section. The temperature quenching of Er(3+) decay time demonstrates the presence of non-radiative trap states, whose density and energy gap between Er(3+) (4) I 13/2 excited levels are reduced by high-temperature annealing. The effective excitation cross section initially increases and eventually decreases with temperature, indicating that the energy transfer process is phonon assisted in both samples.

  7. Temperature dependent surface and spectral modifications of nano V2O5 films

    NASA Astrophysics Data System (ADS)

    Manthrammel, M. Aslam; Fatehmulla, A.; Al-Dhafiri, A. M.; Alshammari, A. S.; Khan, Aslam

    2017-03-01

    Nanocrystalline V2O5 films have been deposited on glass substrates at 300°C substrate temperature using thermal evaporation technique and were subjected to thermal annealing at different temperatures 350, 400, and 550°C. X-ray diffraction (XRD) spectra exhibit sharper and broader characteristic peaks respectively indicating the rearrangement of nanocrystallite phases with annealing temperatures. Other phases of vanadium oxides started emerging with the rise in annealing temperature and the sample converted completely to VO2 (B) phase at 550°C annealing. FESEM images showed an increase in crystallite size with 350 and 400°C annealing temperatures followed by a decrease in crystallite size for the sample annealed at 550°C. Transmission spectra showed an initial redshift of the fundamental band edge with 350 and 400°C while a blue shift for the sample annealed at 550°C, which was in agreement with XRD and SEM results. The films exhibited smart window properties as well as nanorod growth at specific annealing temperatures. Apart from showing the PL and defect related peaks, PL studies also supported the observations made in the transmission spectra.

  8. Temperature dependence of circular DNA topological states

    NASA Astrophysics Data System (ADS)

    Chen, Hu; Liu, Yanhui; Zhou, Zhen; Hu, Lin; Ou-Yang, Zhong-Can; Yan, Jie

    2009-04-01

    Circular double-stranded DNA has different topological states which are defined by their linking numbers. Equilibrium distribution of linking numbers can be obtained by closing a linear DNA into a circle by ligase. Using Monte Carlo simulation, we predict the temperature dependence of the linking number distribution of small circular DNAs. Our predictions are based on flexible defect excitations that resulted from local melting or unstacking of DNA base pairs. We found that the reduced bending rigidity alone can lead to measurable changes of the variance of linking number distribution of short circular DNAs. If the defect is accompanied by local unwinding, the effect becomes much more prominent. The predictions can be easily investigated in experiments, providing a new method to study the micromechanics of sharply bent DNAs and the thermal stability of specific DNA sequences. Furthermore, the predictions are directly applicable to the studies of binding of DNA-distorting proteins that can locally reduce DNA rigidity, form DNA kinks, or introduce local unwinding.

  9. Temperature dependence of circular DNA topological states.

    PubMed

    Chen, Hu; Liu, Yanhui; Zhou, Zhen; Hu, Lin; Ou-Yang, Zhong-Can; Yan, Jie

    2009-04-01

    Circular double-stranded DNA has different topological states which are defined by their linking numbers. Equilibrium distribution of linking numbers can be obtained by closing a linear DNA into a circle by ligase. Using Monte Carlo simulation, we predict the temperature dependence of the linking number distribution of small circular DNAs. Our predictions are based on flexible defect excitations that resulted from local melting or unstacking of DNA base pairs. We found that the reduced bending rigidity alone can lead to measurable changes of the variance of linking number distribution of short circular DNAs. If the defect is accompanied by local unwinding, the effect becomes much more prominent. The predictions can be easily investigated in experiments, providing a new method to study the micromechanics of sharply bent DNAs and the thermal stability of specific DNA sequences. Furthermore, the predictions are directly applicable to the studies of binding of DNA-distorting proteins that can locally reduce DNA rigidity, form DNA kinks, or introduce local unwinding.

  10. Dependences of emission intensity of Si light-emitting diodes on dressed-photon-phonon-assisted annealing conditions and driving current

    NASA Astrophysics Data System (ADS)

    Kim, Jun Hyoung; Kawazoe, Tadashi; Ohtsu, Motoichi

    2017-09-01

    We investigated how the injected current and the irradiation light power for dressed-photon-phonon (DPP)-assisted annealing affected the performance of the fabricated device. It was shown that there exists a threshold injection current for DPP-assisted annealing. In the case of the devices we fabricated, the threshold current was about 400 mA: When the injected current was below the threshold, the electroluminescence emission intensity did not change even after DPP-assisted annealing. On the other hand, when the injected current was above the threshold, the emission intensity increased by two orders of magnitude. The role of irradiation light was also examined and it was found that the emission spectral profile varied depending on the intensity of the irradiation light power in DPP-assisted annealing. Furthermore, we confirmed that the emission intensity had a quadratic dependence on the driving current when the driving current was higher than 400 mA. This quadratic dependence was considered to be due to electron-electron scattering.

  11. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

    PubMed

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

    2014-10-07

    In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

  12. Non-Stoichiometric Amorphous Indium Selenide Thin Films as a Buffer Layer for CIGS Solar Cells with Various Temperatures in Rapid Thermal Annealing.

    PubMed

    Yoo, Myoung Han; Kim, Nam-Hoon

    2016-05-01

    The conventional structure of most of copper indium gallium diselenide (Culn(1-x)Ga(x)Se2, CIGS) solar cells includes a CdS thin film as a buffer layer. Cd-free buffer layers have attracted great interest for use in photovoltaic applications to avoid the use of hazardous and toxic materials. The RF magnetron sputtering method was used with an InSe2 compound target to prepare the indium selenide precursor. Rapid thermal annealing (RTA) was conducted in ambient N2 gas to control the concentration of volatile Se from the precursor with a change in temperature. The nature of the RTA-treated indium selenide thin films remained amorphous under annealing temperatures of ≤ 700 degrees C. The Se concentration of the RTA-treated specimens demonstrated an opposite trend to the annealing temperature. The optical transmittance and band gap energies were 75.33% and 2.451-3.085 eV, respectively, and thus were suitable for the buffer layer. As the annealing temperature increased, the resistivity decreased by an order-of-magnitude from 10(4) to 10(1) Ω-cm. At lower Se concentrations, the conductivity abruptly changed from p-type to n-type without crystallite formation in the amorphous phase, with the carrier concentration in the order of 10(17) cm(-3).

  13. Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

    2017-09-01

    In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

  14. Human Cell Assays for Synthesis-Dependent Strand Annealing and Crossing over During Double-Strand Break Repair

    PubMed Central

    Zapotoczny, Grzegorz; Sekelsky, Jeff

    2017-01-01

    DNA double-strand breaks (DSBs) are one of the most deleterious types of lesions to the genome. Synthesis-dependent strand annealing (SDSA) is thought to be a major pathway of DSB repair, but direct tests of this model have only been conducted in budding yeast and Drosophila. To better understand this pathway, we developed an SDSA assay for use in human cells. Our results support the hypothesis that SDSA is an important DSB repair mechanism in human cells. We used siRNA knockdown to assess the roles of a number of helicases suggested to promote SDSA. None of the helicase knockdowns reduced SDSA, but knocking down BLM or RTEL1 increased SDSA. Molecular analysis of repair products suggests that these helicases may prevent long-tract repair synthesis. Since the major alternative to SDSA (repair involving a double-Holliday junction intermediate) can lead to crossovers, we also developed a fluorescent assay that detects crossovers generated during DSB repair. Together, these assays will be useful in investigating features and mechanisms of SDSA and crossover pathways in human cells. PMID:28179392

  15. Effects of post-annealing and temperature/humidity treatments on the interfacial adhesion energy of the Cu/SiN x interface for Cu interconnects

    NASA Astrophysics Data System (ADS)

    Jeong, Minsu; Bae, Byung-Hyun; Lee, Hyeonchul; Kang, Hee-Oh; Hwang, Wook-Jung; Yang, Jun-Mo; Park, Young-Bae

    2016-06-01

    The effects of 200 °C post-annealing and 85 °C and 85% relative humidity temperature and humidity (T/H) treatments on the interfacial adhesion energy of a Cu/SiN x interface were systematically investigated. The results of a four-point bending test, X-ray photoemission spectroscopy, and high-resolution transmission electron microscopy revealed that the interfacial adhesion energy during T/H treatment decreased with time faster than during annealing treatment, which is closely related to the faster Cu oxidation of SiN x /Cu interfaces.

  16. Effect of low temperature vacuum annealing on microstructural, optical, electronic, electrical, nanomechanical properties and phase transition behavior of sputtered vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Porwal, Deeksha; Esther, A. Carmel Mary; Dey, Arjun; Gupta, A. K.; Raghavendra Kumar, D.; Bera, Parthasarathi; Barshilia, Harish C.; Bhattacharya, Manjima; Mukhopadhyay, Anoop Kumar; Khan, Kallol; Sharma, Anand Kumar

    2016-10-01

    Vanadium oxide thin films were deposited on quartz substrate by pulsed RF magnetron sputtering technique at 400-600 W and subsequently annealed at 100 °C in vacuum (1.5 × 10-5 mbar). Phase analysis, surface morphology and topology of the films e.g., both as-deposited and annealed were investigated by x-ray diffraction, field emission scanning electron microscopy and atomic force microscopy techniques. X-ray photoelectron spectroscopy (XPS) was employed to understand the elemental oxidation of the films. Transmittance of the films was evaluated by UV-vis-NIR spectrophotometer in the wavelength range of 200-1600 nm. Sheet resistance of the films was measured by two-probe method both for as-deposited and annealed conditions. XPS study showed the existence of V5+ and V4+ species. Metal to insulator transition temperature of the as-deposited film decreased from 339 °C to 326 °C after annealing as evaluated by differential scanning calorimetric technique. A significant change in transmittance was observed in particular at near infrared region due to alteration of surface roughness and grain size of the film after annealing. Sheet resistance values of the annealed films decreased as compared to the as-deposited films due to the lower in oxidation state of vanadium which led to increase in carrier density. Combined nanoindentation and finite element modeling were applied to evaluate nanohardness (H), Young’s modulus (E), von Mises stress and strain distribution. Both H and E were improved after annealing due to increase in crystallinity of the film.

  17. Effect of annealing temperature on the optical spectra of CdS thin films deposited at low solution concentrations by Chemical Bath Deposition (CBD) Technique.

    PubMed

    Rizwan, Zahid; Zakaria, Azmi; Mohd Ghazali, Mohd Sabri; Jafari, Atefeh; Din, Fasih Ud; Zamiri, Reza

    2011-02-22

    Two different concentrations of CdCl(2) and (NH(2))(2)CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD) technique. CdCl(2) (0.000312 M and 0.000625 M) was employed as a source of Cd(2+) while (NH(2))(2)CS (0.00125 M and 0.000625 M) for S(2-) at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl(2) (0.000312 M). Optical energy band gap (E(g)), Urbach energy (E(u)) and absorption coefficient (α) have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97%) was obtained for the air-annealed films at higher temperature at CdCl(2) (0.000312 M).

  18. Doubling the critical current density in superconducting FeSe0.5Te0.5 thin films by low temperature oxygen annealing

    DOE PAGES

    Zhang, Cheng; Si, Weidong; Li, Qiang

    2016-11-14

    Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities Jc, low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field Jc, particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field Jc in FeSe0.5Te0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm2. In-field performance is also dramatically enhanced. In conclusion, our results demonstrate thatmore » low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.« less

  19. Low-temperature volume radiation annealing of cold-worked bands of Al-Li-Cu-Mg alloy by 20-40 keV Ar+ ion

    NASA Astrophysics Data System (ADS)

    Ovchinnikov, V. V.; Gushchina, N. V.; Mozharovsky, S. M.; Kaigorodova, L. I.

    2017-01-01

    The processes of radiation-dynamic nature (in contrast to the thermally-activated processes) in the course of short-term irradiation of 1 mm thick bands of cold-worked aluminum alloy 1441 (of system Al-Li-Cu-Mg) with Ar+ 20-40 keV were studied. An effect of in-the-bulk (throughout the whole of metal bands thickness) low-temperature radiation annealing of the named alloy, multiply accelerated as compared with common thermal annealing processes was registered (with projected ranges of ions of considered energies definitely not exceeding 0.1 μm). The processes of recrystallization and intermetallic structure changes (occurring within a few seconds of Ar+ irradiation) have the common features as well as the differences in comparison with the results of two hour standard thermal annealing.

  20. Numerical investigation of temperature field Induced by dual wavelength lasers in sub-microsecond laser annealing technology for insulated gate bipolar transistor

    NASA Astrophysics Data System (ADS)

    Cui, GuoDong; Ma, Mingying; Wang, Fan; Sun, Gang; Lan, Yanping; Xu, Wen

    2015-07-01

    To enhance the performance of the Insulated Gate Bipolar Transistor (IGBT), sub-microsecond laser annealing (LA) is propitious to achieve maximal dopant activation with minimal diffusion. In this work, two different lasers are used as annealing resource: a continuous 808 nm laser with larger spot is applied to preheat the wafer and another sub-microsecond pulsed 527 nm laser is responsible to activate the dopant. To optimize the system's performance, a physical model is presented to predict the thermal effect of two laser fields interacting on wafer. Using the Finite-Element method (FEM), we numerically investigate the temperature field induced by lasers in detail. The process window corresponding to the lasers is also acquired which can satisfy the requirements of the IGBT's annealing.