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Sample records for annealing temperature dependence

  1. Dependence of Characteristic Diode Parameters in Ni/n-GaAs Contacts on Thermal Annealing and Sample Temperature

    NASA Astrophysics Data System (ADS)

    Yildirim, N.; Dogan, H.; Korkut, H.; Turut, A.

    We have prepared the sputtered Ni/n-GaAs Schottky diodes which consist of as-deposited, and diodes annealed at 200 and 400°C for 2 min. The effect of thermal annealing on the temperature-dependent current-voltage (I-V) characteristics of the diodes has been experimentally investigated. Their I-V characteristics have been measured in the temperature range of 60-320 K with steps of 20 K. It has been seen that the barrier height (BH) slightly increased from 0.84 (as-deposited sample) to 0.88 eV at 300 K when the contact has been annealed at 400°C. The SBH increased whereas the ideality factor decreased with increasing annealing temperature for each sample temperature. The I-V measurements showed a dependence of ideality factor n and BH on the measuring temperature that cannot be explained by the classical thermionic emission theory. The experimental data are consistent with the presence of an inhomogeneity of the SBHs. Therefore, the temperature dependent I-V characteristics of the diodes have been discussed in terms of the multi-Gaussian distribution model. The experimental data good have agree with the fitting curves over whole measurement temperature range indicating that the SBH inhomogeneity of our as-deposited and annealed Ni/n-GaAs SBDs can be well-described by a double-Gaussian distribution. The slope of the nT versus T plot for the samples has approached to unity with increasing annealing temperature and becomes parallel to that of the ideal Schottky contact behavior for the 400°C annealed diode. Thus, it has been concluded that the thermal annealing process translates the metal-semiconductor contacts into thermally stable Schottky contacts.

  2. Annealing temperature dependency of ZnO thin films memristive behavior

    NASA Astrophysics Data System (ADS)

    Shaari, N. A. A.; Kasim, S. M. M.; Rusop, M.; Herman, S. H.

    2016-07-01

    The work focuses on the effect of different annealing temperature on the ZnO-based memristive device. Zinc oxide was deposited on the ITO substrate by sol-gel spincoating technique. The deposited ZnO thin films were then annealed from 50°C to 450°C in a furnace for 60 minutes each. The electrodes Platinum (Pt) were sputtered by using JEOL JFC-1600 Auto Fine Coater. The thin film thicknesses were measured by Veeco Dektak 150 Surface Profiler. The thickness of the thin film annealed at 350°C is the thinnest, which is 54.78nm and from the electrical characterization it also shown the switching characteristic behavior. The surface morphology and topology to examine the existence of nanoparticles

  3. Effects of annealing on the coercivity of Sm(Co,Fe,Cu,Zr)z ribbons and its temperature dependence

    NASA Astrophysics Data System (ADS)

    Rong, Chuan-bing; Zhang, Hong-wei; Chen, Ren-jie; Shen, Bao-gen; He, Shu-li; Liu, J. Ping

    2006-02-01

    Sm(CobalFe0.1CuxZr0.03)7 (x = 0.0-0.25) ribbons have been prepared by melt spinning. The effects of annealing parameters on coercivity and its temperature dependence have been studied systematically. It is found that the melt-spinning technique remarkably improves the magnetic properties and simplifies the annealing process. The high-performance precipitation-hardened magnets can be obtained by only short-time ageing and slow cooling from 850 to 400 °C, without the standard solid solution. More interestingly, the temperature coefficient of coercivity of the ribbons can be tuned through adjustments of the processing parameters.

  4. Temperature dependence of GMR and effect of annealing on electrodeposited Co-Ag granular films

    NASA Astrophysics Data System (ADS)

    Garcia-Torres, Jose; Vallés, Elisa; Gómez, Elvira

    2010-10-01

    The magnetoresistance of Co-Ag granular films composed of superparamagnetic and ferromagnetic particles was studied at different temperatures. The increase in the GMR values while decreasing temperature down to 20 K was quantified. The non-saturating behaviour of the MR( H) curves was retained even at the lowest measurement temperature, which was mainly attributed to the dipolar interaction among the superparamagnetic particles. The influence of the annealing conditions on the magnetoresistance was also studied. In all conditions, a decrease in the GMR values was measured being attributed to an increase in the particle size.

  5. Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass

    SciTech Connect

    Ueda, A.; Wu, M.; Mu, R.

    1998-12-31

    The authors have fabricated Se nanoparticles in silica substrates by ion implantation followed by thermal annealing up to 1000 C, and studied the Se nanoparticle formation by optical absorption spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. The sample with the highest dose (1 {times} 10{sup 17} ions/cm{sup 2}) showed the nanoparticle formation during the ion implantation, while the lower dose samples (1 and 3 {times} 10{sup 16} ions/cm{sup 2}) required thermal treatment to obtain nano-sized particles. The Se nanoparticles in silica were found to be amorphous. After thermal annealing, the particle doses approached the value of bulk after thermal annealing. The temperature dependent absorption spectra were also measured for this system in a temperature range from 15 to 300 K.

  6. The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

    NASA Astrophysics Data System (ADS)

    Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

    2016-04-01

    CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co65Ni15Fe20, Co62Ni15Fe23, and Co55Ni15Fe30 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co65Ni15Fe20, Co62Ni15Fe23, and Co55Ni15Fe30 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

  7. The annealing temperature dependence of anatase TiO2 thin films prepared by the electron-beam evaporation method

    NASA Astrophysics Data System (ADS)

    Taherniya, Atefeh; Raoufi, Davood

    2016-12-01

    In this paper, we report on titanium dioxide (TiO2) thin films deposited by an electron beam evaporation method on quartz glass substrates (15 × 15 × 2 mm3 in size), followed by post-annealing at 300 °C to 600 °C for an annealing time of up to 2 h. The substrate temperature during the film deposition was kept at 150 °C. The effect of post-growth thermal annealing on the structural and optical properties of TiO2 thin films were systematically studied as a function of annealing temperature. We found that the as-deposited TiO2 films are amorphous in structure, while the films started to crystallize into the anatase phase when annealed at temperatures ≥450 °C. An increase in annealing temperature results in a decrease of transmittance percentage and also in optical band gap energy. The refractive indices of the films were evaluated from the measured transmittance spectra using the envelope method. An increase in the refractive index with an increase of annealing temperature was observed.

  8. Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts

    NASA Astrophysics Data System (ADS)

    Ejderha, Kadir; Yıldırm, N.; Turut, A.

    2014-11-01

    Co/n-GaN SDs has been prepared by magnetron DC sputtering technique. The Co/n-GaN SDs have annealed at 600 °C after a post-deposition. The diode parameters such as the ideality factor, barrier height and Richardson constant have been determined by thermionic emission (TE) equation within the measurement temperature range 60-320 K by the steps of 20 K in the dark. It has been seen that the parameters depend on the measurement temperature indicating the presence of a lateral inhomogeneity in the Schottky barrier. Therefore, it has been modified the experimental data by the thermionic emission (TE) mechanism with Gaussian distribution of the barrier heights by using Tung's theoretical approach that the Schottky barrier consists of laterally inhomogeneous patches of different barrier heights. Thus, the modified Richardson plot according to Tung's barrier inhomogeneity model [8] has given a Richardson constant of 27.66 A/(cm2 K2).

  9. Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping

    2013-12-01

    Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

  10. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  11. Post-deposition annealing temperature dependence TiO2-based EGFET pH sensor sensitivity

    NASA Astrophysics Data System (ADS)

    Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2016-07-01

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO2 sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO2 deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO2 thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  12. Reduced annealing temperatures in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.

    1981-01-01

    Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

  13. High temperature annealing of ion irradiated tungsten

    DOE PAGES

    Ferroni, Francesco; Yi, Xiaoou; Arakawa, Kazuto; ...

    2015-03-21

    In this study, transmission electron microscopy of high temperature annealing of pure tungsten irradiated by self-ions was conducted to elucidate microstructural and defect evolution in temperature ranges relevant to fusion reactor applications (500–1200°C). Bulk isochronal and isothermal annealing of ion irradiated pure tungsten (2 MeV W+ ions, 500°C, 1014 W+/cm2) with temperatures of 800, 950, 1100 and 1400°C, from 0.5 to 8 h, was followed by ex situ characterization of defect size, number density, Burgers vector and nature. Loops with diameters larger than 2–3 nm were considered for detailed analysis, among which all loops had View the MathML source andmore » were predominantly of interstitial nature. In situ annealing experiments from 300 up to 1200°C were also carried out, including dynamic temperature ramp-ups. These confirmed an acceleration of loop loss above 900°C. At different temperatures within this range, dislocations exhibited behaviour such as initial isolated loop hopping followed by large-scale rearrangements into loop chains, coalescence and finally line–loop interactions and widespread absorption by free-surfaces at increasing temperatures. An activation energy for the annealing of dislocation length was obtained, finding Ea=1.34±0.2 eV for the 700–1100°C range.« less

  14. High temperature annealing of ion irradiated tungsten

    SciTech Connect

    Ferroni, Francesco; Yi, Xiaoou; Fitzgerald, Steven P.; Edmondson, Philip D.; Roberts, Steve G.

    2015-03-21

    In this study, transmission electron microscopy of high temperature annealing of pure tungsten irradiated by self-ions was conducted to elucidate microstructural and defect evolution in temperature ranges relevant to fusion reactor applications (500–1200°C). Bulk isochronal and isothermal annealing of ion irradiated pure tungsten (2 MeV W+ ions, 500°C, 1014 W+/cm2) with temperatures of 800, 950, 1100 and 1400°C, from 0.5 to 8 h, was followed by ex situ characterization of defect size, number density, Burgers vector and nature. Loops with diameters larger than 2–3 nm were considered for detailed analysis, among which all loops had View the MathML source and were predominantly of interstitial nature. In situ annealing experiments from 300 up to 1200°C were also carried out, including dynamic temperature ramp-ups. These confirmed an acceleration of loop loss above 900°C. At different temperatures within this range, dislocations exhibited behaviour such as initial isolated loop hopping followed by large-scale rearrangements into loop chains, coalescence and finally line–loop interactions and widespread absorption by free-surfaces at increasing temperatures. An activation energy for the annealing of dislocation length was obtained, finding Ea=1.34±0.2 eV for the 700–1100°C range.

  15. Effect of annealing on the temperature dependence of inelastic tunneling contributions vis-à-vis tunneling magnetoresistance and barrier parameters in CoFe/MgO/NiFe magnetic tunnel junctions

    SciTech Connect

    Bhusan Singh, Braj; Chaudhary, Sujeet

    2014-02-28

    The effect of annealing on the changes in the inelastic tunneling contributions in tunneling conductance of ion beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions (MTJs) is investigated. The inelastic contributions are evaluated using hopping conduction model of Glazman and Matveev in the temperature range of 25–300 K. The hopping through number of series of localized states present in the barrier due to structural defects increases from 9 (in as deposited MTJ) to 18 after annealing (at 200 °C/1 h); although no changes in the interface roughness of CoFe-MgO and MgO-NiFe interfaces are observed as revealed by the x-ray reflectance studies on planar MTJs. The bias dependence of tunneling magnetoresistance (TMR) at 25 K is found to get improved after annealing as revealed by the value V{sub 1/2} (the bias value at which the TMR reaches to half of its value at nearly zero bias); which is 78 mV (in MTJ annealed at 200 °C/1 h) 2.5 times the value of 33 mV (in as deposited MTJ). At 25 K the inelastic tunneling spectra revealed the presence of zero bias anomaly and magnon excitations in the range of 10–15 mV. While the barrier height exhibited a strong temperature dependence with nearly 100% increase from the value at 300 K to 25 K, the temperature dependence of TMR becomes steep after annealing.

  16. Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.

    1980-01-01

    The defect responsible for reverse annealing in 2 ohm/cm n(+)/p silicon solar cells was identified. This defect, with energy level at e sub v + 0.30 eV was tentatively identified as a boron oxygen-vacancy complex. Results indicate that its removal could result in significant annealing for 2 ohm/cm and lower resistivity cells at temperatures as low as 200 C. These results were obtained by use of an expression derived from the Shockley-Read-Hall recombination theory which relates measured diffusion length ratios to relative defect concentrations and electron capture cross sections. The relative defect concentrations and one of the required capture cross sections are obtained from Deep Level Transient Spectroscopy. Four additional capture cross sections are obtained using diffusion length data and data from temperature dependent lifetime studied. These calculated results are in reasonable agreement with experimental data.

  17. Thermoelectric properties by high temperature annealing

    NASA Technical Reports Server (NTRS)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  18. Annealing temperature and thickness dependence of magnetic properties in epitaxial L1{sub 0}-Mn{sub 1.4}Ga films

    SciTech Connect

    Zheng, Y. H. Lu, H.; Teo, K. L.; Han, G. C.

    2014-01-28

    Mn{sub 1.4}Ga films with high perpendicular magnetic anisotropy and high crystalline quality were grown on MgO substrates with Cr buffer layer using molecular beam epitaxy. The crystalline structure and the surface morphology of the films have been systematically investigated as functions of in-situ annealing temperature (T{sub a}) and film thickness. It is found that the magnetic properties can be largely tuned by adjusting T{sub a}. As T{sub a} increases, both saturation magnetization (M{sub s}) and uniaxial perpendicular magnetic anisotropy constant (K{sub u}) increase to the maximum values of 612 emu/cc and 18 Merg/cc at 300 °C, respectively, and then decrease. The morphology also changes with T{sub a}, showing a minimum roughness of 2.2 Å at T{sub a} = 450 °C. On the other hand, as the thickness increases, M{sub s} and K{sub u} increase while coercivity decreases, which indicates there is a magnetic dead layer with a thickness of about 1.5 nm at the interfaces. The detailed examination on the surface morphology of the films with various thicknesses shows a complicated film growth process, which can be understood from the relaxation mechanism of the interfacial strain.

  19. Burst annealing of high temperature GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  20. Selective aspect ratio of CNTs based on annealing temperature by TCVD method

    NASA Astrophysics Data System (ADS)

    Yousefi, Amin Termeh; Mahmood, Mohamad Rusop; Ikeda, Shoichiro

    2016-07-01

    Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicate that the nanotubes are approximately perpendicular to the surface of the silicon substrate and form carbon nanotubes in different aspect ratios according to the applied annealing temperature. Furthermore, due to the optimized results it can be observed that, the mechanism of the CNTs growth is still present in the annealing step as well as deposition process and the most CNTs with crystalline aspect, produced in the annealing temperature, which was optimized at 700 - 900 ˚C. This result demonstrates that the growth rate, mass production, diameter, density, and crystallinity of CNT can be controlled by the annealing temperature.

  1. Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing.

    PubMed

    Alouane, M H Hadj; Ilahi, B; Maaref, H; Salem, B; Aimez, V; Morris, D; Gendry, M

    2011-10-01

    We report on the impact of phosphorous ion-implantation-induced band gap tuning on the temperature dependent photoluminescence (PL) properties of InAs/InP quantum dashes (QDas). The high temperature range carriers' activation energy, extracted from Arrhenius plots, is found to decrease from 238 to 42 meV when the ion implantation dose increases from 10(11) cm(-2) to 5 x 10(14) cm(-2) which is consistent with the observed emission energy blueshift increase with increasing the ion implantation doses. This effect is attributed to the As/P exchange which reduces the carrier confining potential depth. For intermediate ion implantation doses the reduced carrier confining potential barrier combined with the non-uniform intermixing process, that causes an increased QDas size dispersion, result in anomalous temperature-dependent PL properties. Indeed, the temperature induced PL emission energy redshift measured between 10 K and 300 K is found to be strongly affected by the carrier redistribution within the broadened localized QDas states.

  2. Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect

    Iucolano, Ferdinando; Greco, Giuseppe; Roccaforte, Fabrizio

    2013-11-11

    This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρ{sub C}, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρ{sub C} exhibits a “metal-like” behavior, i.e., describable by a T{sup 1.8} dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.

  3. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

    NASA Technical Reports Server (NTRS)

    Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

    1973-01-01

    Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

  4. Low temperature magnetothermoelectric effect and magnetoresistance in Te vapor annealed Bi2Te3.

    PubMed

    Hor, Y S; Qu, D; Ong, N P; Cava, R J

    2010-09-22

    The electrical properties of single crystals of p-type Bi(2)Te(3) are shown to be tuned by annealing as-grown crystals in elemental Te vapor at temperatures in the range of 400-420 °C. While as-grown nominally stoichiometric Bi(2)Te(3) has p-type conductivity below room temperature, Te vapor annealed Bi(2)Te(3) shows a cross over from p- to n-type behavior. The temperature dependent resistivity of the Te annealed crystals shows a characteristic broad peak near 100 K. Applied magnetic fields give rise to a large low temperature magnetothermoelectric effect in the Te annealed samples and enhance the low temperature peak in the resistivity. Further, Te annealed Bi(2)Te(3) shows a large positive magnetoresistance, ∼ 200% at 2 K, and ∼ 15% at room temperature. The annealing procedure described can be employed to optimize the properties of Bi(2)Te(3) for study as a topological insulator.

  5. Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.

    1980-01-01

    Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

  6. Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jiang, Xian-Zhe; Yang, Xue-Lin; Ji, Cheng; Xing, Hai-Ying; Yang, Zhi-Jian; Wang, Cun-Da; Yu, Tong-Jun; Zhang, Guo-Yi

    2014-06-01

    GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on VGa related defects are observed from photoluminescence measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different (n-type GaN and p-type GaN) templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.

  7. Influence of annealing temperature on the Dy diffusion process in NdFeB magnets

    NASA Astrophysics Data System (ADS)

    Hu, Sheng-qing; Peng, Kun; Chen, Hong

    2017-03-01

    Sintered NdFeB magnets were coated with a layer of Dy metal using electron beam evaporation method and then annealed at various temperatures to investigate the temperature dependence of Dy diffusion process in NdFeB magnets. A Dy-rich phase was observed along the grain boundaries after the grain boundary diffusion process, the diffusion coefficients of various temperatures were obtained, the diffusion coefficients of Dy along the grain boundaries at 800 °C and 900 °C were determined to be 9.8×10-8 cm2 s-1 and 2.4×10-7 cm2 s-1, respectively. The diffusion length depended on the annealing temperature and the maximum diffusion length of approximately 1.8 mm and 3.0 mm can be obtained after annealing at 800 °C and 900 °C for 8 h. Higher diffusion temperature results in the diffusion not only along the grain boundaries but also into grains and then decrease in magnetic properties. The optimum annealing conditions can be determined as 900 °C for 8 h. The coercivity was improved from 1040 kA/m to 1450 kA/m and its magnetization has no significant reduction after the grain boundary diffusion process at the optimum annealing conditions.

  8. Effect of annealing temperature on titania nanoparticles

    SciTech Connect

    Manikandan, K. Arumugam, S.; Chandrasekaran, G.

    2014-04-24

    Titania polycrystalline samples are prepared by using sol-gel route hydrolyzing a alkoxide titanium precursor under acidic conditions. The as prepared samples are treated with different calcination temperatures. The anatase phase of titania forms when treated below 600°C, above that temperature the anatase phase tends to transform into the rutile phase of titania. The experimental determination of average grain size, phase formation, lattice parameters and the crystal structures of titania samples at different calcinations is done using X-ray diffraction (XRD). Fourier Transform Infra-red Spectroscopy (FTIR), UV-vis-NIR spectroscopy and Scanning Electron Microscopy (SEM) and Energy Dispersive Analysis X-ray are used to characterize the samples to bring impact on the respective properties.

  9. Influence of annealing treatment on as-grown Ib-type diamond crystal at a high temperature and high pressure

    NASA Astrophysics Data System (ADS)

    Huang, Guo-Feng; Yin, Ji-Wen; Bai, Hong-Bo; Hu, Yi-Ga; Kai, Li; Jing, Jing; Ma, Hong-An; Jia, Xiao-Peng

    2012-10-01

    In this paper, we report on the influence of annealing treatment on as-grown Ib-type diamond crystal under high pressure and high temperature in a china-type cubic anvil high-pressure apparatus. Experiments are carried out at a pressure of 7.0 GPa and temperatures ranging from 1700 °C to 1900 °C for 1 h. Annealing treatment of the diamond crystal shows that the aggregation rate constant of nitrogen atoms in the as-grown Ib-type diamond crystal strongly depends on diamond morphology and annealing temperature. The aggregation rate constant of nitrogen remarkably increases with the increase of annealing temperature and its value in octahedral diamond is much higher than that in cubic diamond annealed at the same temperature. The colour of octahedral diamond crystal is obviously reduced from yellow to nearly colorless after annealing treatment for 1 h at 1900 °C, which is induced by nitrogen aggregation in a diamond lattice. The extent of nitrogen aggregation in an annealed diamond could approach approximately 98% indicated from the infrared absorption spectra. The micro-Raman spectrum reveals that the annealing treatment can improve the crystalline quality of Ib-type diamond characterized by a half width at full maximum at first order Raman peak, and therefore the annealed diamond crystals exhibit nearly the same properties as the natural IaA-type diamond stones of high quality in the Raman measurements.

  10. Temperature effects on the mechanical properties of annealed and HERF 304L stainless steel.

    SciTech Connect

    Antoun, Bonnie R.

    2004-11-01

    The effect of temperature on the tensile properties of annealed 304L stainless steel and HERF 304L stainless steel forgings was determined by completing experiments over the moderate range of -40 F to 160 F. Temperature effects were more significant in the annealed material than the HERF material. The tensile yield strength of the annealed material at -40 F averaged twenty two percent above the room temperature value and at 160 F averaged thirteen percent below. The tensile yield strength for the three different geometry HERF forgings at -40 F and 160 F changed less than ten percent from room temperature. The ultimate tensile strength was more temperature dependent than the yield strength. The annealed material averaged thirty six percent above and fourteen percent below the room temperature ultimate strength at -40 F and 160 F, respectively. The HERF forgings exhibited similar, slightly lower changes in ultimate strength with temperature. For completeness and illustrative purposes, the stress-strain curves are included for each of the tensile experiments conducted. The results of this study prompted a continuation study to determine tensile property changes of welded 304L stainless steel material with temperature, documented separately.

  11. Frequency dependence of loss tangent of thermally annealed undoped lead iodide crystals in the dark

    NASA Astrophysics Data System (ADS)

    Hassan, Mahmoud A.; Abdul-Gader Jafar, Mousa M.

    2006-10-01

    The effect of isothermal annealing ( T⩽120 °C) on the frequency dependence of the loss tangent, tan δ, of undoped lead iodide (PbI 2) crystals in the dark has been investigated in the range 0.1-15 kHz at different ambient temperatures ( T=15-120 °C) without and with DC biasing ( V⩽2 V). Thermal annealing of as-grown PbI 2 crystals modified both the magnitude and frequency dependence of their tan δ. The tan δ-ƒ data ( T=17 °C) of unbiased as-grown crystals were found to fit a tan δ∝ƒ - m dependence, with m˜0.94 in the range 100 Hz <ƒ<10 kHz. After annealing these crystals at T=70 °C for 1 h, the tan δ∝ƒ - m relation was obeyed for unbiased samples at any T over most of the frequency range studied, with the exponent m being reduced to around 0.55; a behavior that was also found for isothermally annealed PbI 2 crystals when were DC biased, but at high ambient temperatures. The tan δ- T data (ƒ=1 kHz) of the unbiased prolonged annealed ( T=120 °C) PbI 2 crystals exhibited two different thermally activated regimes, with activation energies Ea˜0.23 and 0.087 eV in the ranges 75-120 °C and 15-75 °C, respectively, which were related to trapping cationic Pb +2-vacancies/hole-impurity levels in the crystal band gap. An interpolytypic phase transformation of the 2H-PbI 2 upon isothermal annealing may not, however, be entirely excluded.

  12. Vacuum annealing temperature on spray In2S3 layers

    NASA Astrophysics Data System (ADS)

    Bouguila, Nourredine; Timoumi, Abdelmajid; Bouzouita, Hassen

    2014-02-01

    Indium sulfide In2S3 thick films are deposited on glass substrates using spray technique over the optimum conditions experiments (Ts = 340 °C, S/In = 2). The films are polycrystalline and have thickness of about 1.8 μm. These films are annealed in a vacuum sealed pyrex tubes (10-5 torr). Physico-chemical characterizations by SEM observation, X-ray diffraction and EDX analysis are undertaked on these films. This treatment has improved crystallinity of samples. It has allowed thus to stabilize β and γ varieties of In2S3 material. In2O3 and In6S7 phases have appeared with very weak intensities at high temperatures. The best structure quality are obtained at 300 °C for the optimum annealed temperature (Ts = 340 °C, S/In = 2), for which samples are constituted in dominance by γ phase oriented preferentially towards (1 0 2). The grain size is 42 nm of this phase. Chemical composition of such films has changed relatively to non-treated film but it seems not be affected by treatment temperature. Atomic molar ratio S/In is obtained for 0.9. Optical study shows that these layers are transparent in the visible and optical direct band gap increases as function of annealed temperature.

  13. Dependency of built-in potential of LaF3/porous-silicon heterostructure prepared by chemical bath deposition technique on the concentration of LaCl3 and annealing temperature

    NASA Astrophysics Data System (ADS)

    Rahman, Md. Hafijur; Ismail, Abu Bakar Md.

    2015-11-01

    Effect of LaCl3 concentration and annealing temperature on the built-in potential of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric acid on the porous silicon (PS) substrate. This enables direct deposition of LaF3 on the pore walls of the PS leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by energy dispersive of X-ray analysis. The built-in potential decreases with LaCl3 concentration and increases with annealing temperature. Therefore, by changing the LaCl3 concentration and annealing temperature quality of the LaF3 layer on PS can be optimized. From the experimental results it can be concluded that lanthanum fluorides can be deposited on the PS surface by the CBD technique, which provides the required passivation for PS. This passivation can enable the PS to be considered as an important material for photonics.

  14. Cesium lead iodide solar cells controlled by annealing temperature.

    PubMed

    Kim, Yu Geun; Kim, Tae-Yoon; Oh, Jeong Hyeon; Choi, Kyoung Soon; Kim, Youn-Jea; Kim, Soo Young

    2017-02-22

    An inorganic lead halide perovskite film, CsPbI3, used as an absorber in perovskite solar cells (PSCs) was optimized by controlling the annealing temperature and the layer thickness. The CsPbI3 layer was synthesized by one-step coating of CsI mixed with PbI2 and a HI additive in N,N-dimethylformamide. The annealing temperature of the CsPbI3 film was varied from 80 to 120 °C for different durations and the thickness was controlled by changing the spin-coating rpm. After annealing the CsPbI3 layer at 100 °C under dark conditions for 10 min, a black phase of CsPbI3 was formed and the band gap was 1.69 eV. Most of the yellow spots disappeared, the surface coverage was almost 100%, and the rms roughness was minimized to 3.03 nm after annealing at 100 °C. The power conversion efficiency (PCE) of the CsPbI3 based PSC annealed at 100 °C was 4.88%. This high PCE value is attributed to the low yellow phase ratio, high surface coverage, low rms roughness, lower charge transport resistance, and lower charge accumulation. The loss ratio of the PCE of the CH3NH3PbIxCl3-x and CsPbI3 based PSCs after keeping in air was 47 and 26%, respectively, indicating that the stability of the CsPbI3 based PSC is better than that of the CH3NH3PbIxCl3-x based PSC. From these results, it is evident that CsPbI3 is a potential candidate for solar cell applications.

  15. Sign change in the tunnel magnetoresistance of Fe{sub 3}O{sub 4}/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

    SciTech Connect

    Marnitz, L. Rott, K.; Niehörster, S.; Klewe, C.; Meier, D.; Fabretti, S.; Thomas, A.; Reiss, G.; Kuschel, T.; Witziok, M.; Krampf, A.; Kuschel, O.; Schemme, T.; Kuepper, K.; Wollschläger, J.

    2015-04-15

    Magnetite (Fe{sub 3}O{sub 4}) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe{sub 3}O{sub 4}/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe{sub 3}O{sub 4} as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200°C in oxygen atmosphere) during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier.

  16. Realizing field-dependent conduction in ZnO nanowires without annealing.

    PubMed

    Burke-Govey, C P; Castanet, U; Warring, H; Nau, A; Ruck, B J; Majimel, J; Plank, N O V

    2017-03-24

    We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on-off ratios of 10(5) and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state.

  17. Realizing field-dependent conduction in ZnO nanowires without annealing

    NASA Astrophysics Data System (ADS)

    Burke-Govey, C. P.; Castanet, U.; Warring, H.; Nau, A.; Ruck, B. J.; Majimel, J.; Plank, N. O. V.

    2017-03-01

    We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on–off ratios of 105 and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state.

  18. Luminescence characteristics of nanoporous anodic alumina annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Ilin, D. O.; Vokhmintsev, A. S.; Weinstein, I. A.

    2016-09-01

    Anodic aluminum oxide (AAO) membranes with 100 µm thickness were synthesized in oxalic acid solution under constant current density. Grown samples were annealed in 500-1250 °C range for 5 h in air. Average pore diameter was evaluated using quantitative analysis of SEM images and appeared to be within 78-86 nm diapason. It was found there was a broad emission band in the 350-620 nm region of photoluminescence (PL) spectra in amorphous membranes which is attributed to F-type oxygen deficient centers or oxalic ions. It was shown that intensive red emission caused by Cr3+ (696 nm) and Mn4+ (680 nm) impurities dominates in PL of AAO samples with crystalline α- and δ-phases after annealing at 1100-1250 °C temperatures.

  19. Annealing of Thin Metallic Films Studied by Depth Dependent DB-Spectroscopy and Free Ps Annihilation

    NASA Astrophysics Data System (ADS)

    Reiner, M.; Pikart, P.; Hugenschmidt, C.

    Recent results from depth dependent (C)DB measurements on thin metallic films using the high intense monoener-getic positron beam NEPOMUC are presented. Vapor-deposited films of gold and copper were characterized by depth dependent DB-spectroscopy. The positron diffusion length in thin films was determined by the Doppler broadening of the annihilation radiation and additionally the formation of positronium (Ps) at the surface. Furthermore, the depth dependent DB-and CDB-measurements were compared. During high temperature measurements, the annealing of a thin gold film was observed.

  20. Surface self-diffusion of silicon during high temperature annealing

    SciTech Connect

    Acosta-Alba, Pablo E.; Kononchuk, Oleg; Gourdel, Christophe; Claverie, Alain

    2014-04-07

    The atomic-scale mechanisms driving thermally activated self-diffusion on silicon surfaces are investigated by atomic force microscopy. The evolution of surface topography is quantified over a large spatial bandwidth by means of the Power Spectral Density functions. We propose a parametric model, based on the Mullins-Herring (M-H) diffusion equation, to describe the evolution of the surface topography of silicon during thermal annealing. Usually, a stochastic term is introduced into the M-H model in order to describe intrinsic random fluctuations of the system. In this work, we add two stochastic terms describing the surface thermal fluctuations and the oxidation-evaporation phenomenon. Using this extended model, surface evolution during thermal annealing in reducing atmosphere can be predicted for temperatures above the roughening transition. A very good agreement between experimental and theoretical data describing roughness evolution and self-diffusion phenomenon is obtained. The physical origin and time-evolution of these stochastic terms are discussed. Finally, using this model, we explore the limitations of the smoothening of the silicon surfaces by rapid thermal annealing.

  1. Power change in amorphous silicon technology by low temperature annealing

    NASA Astrophysics Data System (ADS)

    Mittal, Ankit; Rennhofer, Marcus; Dangel, Angelika; Duman, Bogdan; Schlosser, Victor

    2015-07-01

    Amorphous silicon (a-Si) is one of the best established thin-film solar-cell technologies. Despite its long history of research, it still has many critical issues because of its defect rich material and its susceptibility to degrade under light also called as Staebler-Wronski effect (SWE). This leads to an increase in the defect density of a-Si, but as a metastable effect it can be completely healed at temperatures above 170 °C. Our study is focused on investigating the behavior of annealing of different a-Si modules under low temperature conditions below 80 °C indicated by successive change of module power. These conditions reflect the environmental temperature impact of the modules in the field, or integrated in buildings as well. The power changes were followed by STC power rating and investigation of module-power evolution under low irradiance conditions at 50 W/m2. Our samples were recovered close to their initial state of power, reaching as high as 99% from its degraded value. This shows the influence of low temperature annealing and light on metastable module behavior in a-Si thin-film modules.

  2. The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

    SciTech Connect

    Orak, İ.; Ejderha, K.; Sönmez, E.; Alanyalıoğlu, M.; Turut, A.

    2015-01-15

    The Co/n-GaP nano-Schottky diodes have been fabricated to investigate effect of annealing temperature on the characteristics of the device. DC Magnetron sputtering technique has been used for Co metallic contact. The samples have been annealed for three minutes at 400 °C and 600 °C. XRD analyzes of the devices subjected to thermal annealing process have been investigated. Surface images have been taken with atomic force microscopy (AFM) in order to examine the morphology of the surface of the metal layer before and after the annealing the sample. The current–voltage (I–V) measurements taken at room temperature have shown that the ideality factor and series resistance decrease with the increasing annealing temperature. The ideality factor was found to be 1.02 for sample annealed at 400 °C. Before and after annealing, depending on the temperature measurement, the capacitance–frequency (C–f), and conductance–frequency (G–f) have been measured, and graphs have been plotted.

  3. Investigation of the room temperature annealing peak in ionomers

    SciTech Connect

    Goddard, R.J.; Grady, B.P.; Cooper, S.L.

    1993-12-31

    A number of studies appearing in the literature have documented an endothermic peak in differential scanning calorimetry (DSC) scans for ethylene-methacrylic acid copolymer ionomers which appears only upon annealing at room temperature. This peak has been attributed to either polyethylene crystallites, ionic crystallite, or water absorption. In a novel polyurethane cationomer with a quarternized amine contained in hard segment, the same phenomena has been found in DSC scans when the neutralizing anion is bromine or iodine. Since this material does not crystallize, the authors were able to conclusively eliminate crystallization as the cause of the endotherm. The extended x-ray absorption fine structure (EXAFS) of bromine has been measured to differentiate between water absorption and ionic crystallites. Spectra were collected above and below the temperature corresponding to the endothermic peak. The results of the EXAFS analysis will be presented.

  4. Low-temperature electron irradiation and annealing in pure magnesium

    SciTech Connect

    Simester, J.H.

    1982-01-01

    In this study of magnesium after 1.0 MeV electron irradiations at 1.55/sup 0/K, it has been observed that the damage production rate in Mg is (3.57 +- 0.03) x 10/sup -26/ ..cap omega..cm/(e/sup -/ cm/sup 2/). There is no evidence for thermal annealing up to 4/sup 0/K. The low temperature recovery in magnesium is found to consist of two broad substages between 4 to 14/sup 0/K, both of which exhibit evidence for correlated and uncorrelated recovery processes. The two substages are found to have very different frequency factors for annealing, and there is evidence that the recovery processes in the second substage are influenced by those in the first. A model for recovery is proposed using the split configuration in the plane which explains the first substage as being due to interstitial migration in the basal plane and the second to migration perpendicular to the plane.

  5. Magnetic properties of hexagonal barium ferrite films on Pt/MgO(111) substrates annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Han, Mangui; Zheng, Liang; Deng, Jiangxia; Zheng, Peng; Wu, Qiong; Deng, Longjiang; Qin, Huibin

    2016-09-01

    In this work, hexagonal barium ferrite thin films have been deposited on Pt/MgO(111) substrates by pulsed laser deposition. The anneal temperature dependence of crystal structures, extents of diffusion and magnetic properties have been studied. X-ray diffraction patterns reveal that the crystal structure changes from the hexagonal to the spinel when the anneal temperature increases. The texture with c-axis perpendicular to the film plane and the small c-axis dispersion angles (△ɵc) have been obtained in the film annealed at 950 °C for 10 h. Both the X-ray photoelectron spectroscopy profiles and energy dispersive spectrometer show that the diffusions of Mg2+and Fe3+cations are more obvious when the annealing temperature is higher than 950 °C. The film annealed at 950 °C show anisotropic and hard magnetic properties. The magnetic properties of film annealed at 1050 °C are soft. In order to study the cation diffusions between thin film and substrate, the concentration profiles of cations (Ba2+, Fe3+, Mg2+) have been measured by XPS for a thin film with a thickness of 130 nm annealed at 950°C and 1050°C, as shown in Fig. 3. When Ta is 950°C, as shown in Fig. 3(a), diffusions between the film and the substrate are scarcely detected. However, obvious inter-diffusions have been found for Mg2+ cation and Fe3+ cation when it is annealed at 1050°C. An obvious diffusion has not been found for Ba2+ cation at both annealing temperatures.

  6. Composition dependent thermal annealing behaviour of ion tracks in apatite

    NASA Astrophysics Data System (ADS)

    Nadzri, A.; Schauries, D.; Mota-Santiago, P.; Muradoglu, S.; Trautmann, C.; Gleadow, A. J. W.; Hawley, A.; Kluth, P.

    2016-07-01

    Natural apatite samples with different F/Cl content from a variety of geological locations (Durango, Mexico; Mud Tank, Australia; and Snarum, Norway) were irradiated with swift heavy ions to simulate fission tracks. The annealing kinetics of the resulting ion tracks was investigated using synchrotron-based small-angle X-ray scattering (SAXS) combined with ex situ annealing. The activation energies for track recrystallization were extracted and consistent with previous studies using track-etching, tracks in the chlorine-rich Snarum apatite are more resistant to annealing than in the other compositions.

  7. Formation of n-type pyrite films from electrodeposited iron sulphides: effect of annealing temperature

    SciTech Connect

    Gomes, A.; Ares, J.R.; Ferrer, I.J.; Silva Pereira, M.I. da; Sanchez, C

    2003-06-19

    The n-type polycrystalline pyrite films were obtained by annealing mackinawite electrodeposited on metallic titanium substrates in sulphur atmosphere in the temperature range 523-773 K. The detailed structural and morphological characterisation of the films shows that an increase of crystallite size and a porosity decrease was achieved by increasing the sulphuration temperature. The measurement of thermoelectric effect indicates that pyrite films present n-type conduction, which is attributed to the diffusion of Ti atoms from the substrate. The Seebeck coefficient varies from -54 to -24 {mu}V/K, depending on pyrite grain size.

  8. Effect of High-Temperature Annealing on the Microstructure and Hardness of White Pig Iron

    NASA Astrophysics Data System (ADS)

    Afanas'ev, V. K.; Shcherbedinskii, G. V.; Kol'ba, A. V.; Sochnev, A. V.

    2003-03-01

    The effect of high-temperature annealing of different duration on the microstructure of alloy-free cast iron subjected to thermocycling in the molten state is studied. The variation of the hardness of the obtained white cast iron (without graphite segregations) and of the microhardness of pearlite is determined as a function of the annealing time and the cooling conditions. The influence of the modes of high-temperature annealing on the volume fraction of eutectic cementite is analyzed.

  9. Influence of Annealing Temperature on CZTS Thin Film Surface Properties

    NASA Astrophysics Data System (ADS)

    Feng, Wenmei; Han, Junfeng; Ge, Jun; Peng, Xianglin; Liu, Yunong; Jian, Yu; Yuan, Lin; Xiong, Xiaolu; Cha, Limei; Liao, Cheng

    2017-01-01

    In this work, copper zinc tin sulfide (CZTS) films were deposited by direct current sputtering and the samples were annealed in different oven-set temperatures and atmosphere (Ar and H2S). The surface evolution was investigated carefully by using scanning electron microscopy (SEM), Raman spectroscopy and x-ray photoelectron spectroscopy. The surface of the as-sputtered precursor contained little Cu and large amounts of Zn and Sn. The metallic precursor was continuous and compact without pinholes or cracks. With the increase of the temperature from room temperature to 250°C, Cu atoms diffused to the film surface to form Cu1- x S and covered other compounds. Some small platelets were smaller than 500 nm spreading randomly in the holes of the film surfaces. When the temperature reached 350°C, Zn and Sn atoms began to diffuse to the surface and react with S or Cu1- x S. At 400°C, SEM showed the melting of large particles and small particles with a size from 100 nm to 200 nm in the background of the film surface. Excess Zn segregated towards the surface regions and formed ZnS phase on the surface. In addition, the signal of sodium in the CZTS surface was observed above 400°C. At 600°C, a large amount of regular structures with clear edges and corners were observed in the film surface in SEM images. A clear recrystallized process on the surface was assumed from those observations.

  10. Effects of annealing temperature on the properties of Ga-doped In2O3 Thin Films

    NASA Astrophysics Data System (ADS)

    Cho, Shinho

    2015-10-01

    Ga-doped In2O3 (GIO) thin films were deposited on glass substrates at a growth temperature of 300 °C by using radio-frequency magnetron sputtering. The deposited films were then subjected to rapid thermal annealing (RTA) at various temperatures. The annealed films were characterized by using X-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, and Hall-effect measurements. The optical bandgap, electrical resistivity, and figure of merit of the GIO thin films were found to depend significantly on the RTA temperature. The XRD patterns of the films indicated that all the films had a body-centered cubic structure, with the primary peak being the (222) diffraction peak. The average optical transmittance of the GIO thin films for wavelengths of 500 - 1100 nm increased from 44.5% before annealing to 87.2% after annealing at 450 °C; the figure of merit was also the highest after annealing at this temperature. These results indicate that the properties of GIO thin films can be varied by controlling the RTA temperature.

  11. Dielectric response of capacitor structures based on PZT annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Kamenshchikov, Mikhail V.; Solnyshkin, Alexander V.; Pronin, Igor P.

    2016-12-01

    Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540-570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance-voltage (C-V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

  12. The Effect of Annealing Above Glass Transition Temperature on the Optical Properties of Se85Te10Bi5 Thin Films

    NASA Astrophysics Data System (ADS)

    Atyia, H. E.; Farid, A. S.

    2016-01-01

    Se85Te10Bi5 films have been deposited using the thermal evaporation technique. Films with different thicknesses in the thickness range 590.2-273.9 nm were annealed at different annealing temperatures above the glass transition temperature for 120 min. The structure of the annealed films was checked by x-ray diffraction analysis, which indicated a polycrystalline nature for all annealed films, and that the degree of crystallinity increased with increasing annealing temperature. From the reflectance ( R) and transmittance ( T) measurements, the values of the optical absorption coefficient ( α) for the annealed films were estimated to be in the wavelength range of 500-2500 nm. Analysis of the absorption coefficient data reveals allowed indirect transitions and the values of optical band gap ( E g). The values of ( E g) were found to be obeying the Tauc's relation and decreasing with increasing annealing temperature. This behavior is discussed as due to thermal disordering with the structural changes upon annealing. Optical parameters such as lattice and the infinite frequency dielectric constant as ( ɛ L and ɛ ∞), plasma frequency ( ω p), carrier concentration to the effective mass ratio ( N/m*), single- oscillator and dispersion energies ( E o and E d) were found. The dependence of the optical parameters on the annealing temperature was studied and discussed.

  13. Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

    NASA Technical Reports Server (NTRS)

    Danchenko, V.; Fang, P. H.; Brashears, S. S.

    1982-01-01

    Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

  14. Structure and stress studies of low temperature annealed W/Si multilayers for the X-ray telescope.

    PubMed

    Huang, Qiushi; Zhang, Jinshuai; Qi, Runze; Yang, Yang; Wang, Fengli; Zhu, Jie; Zhang, Zhong; Wang, Zhanshan

    2016-07-11

    Low stress W/Si multilayer mirrors are demanded in the hard X-ray telescopes to achieve the high angular resolution. To reduce the stress of the as-deposited multilayer and maintain a high reflectivity, two groups of low-temperature annealing experiments were performed on the periodic multilayers with a d-spacing of ~3.8 nm. The temperature-dependent experiments show that the 150 °C annealing can slightly increase the reflectivity while the stress reduced only by 24%. Higher temperature annealing induced a larger reduction of the stress and the multilayer reached an almost zero stress state at 250 °C. The stress relaxation was accompanied by a small drop of reflectivity of ≤5% and a period compaction of <0.02 nm. The time-dependent experiments indicate that most of the stress changes occurred within the first 10 minutes while a prolonged annealing is not useful. The X-ray scattering and transmission electron microscopy were further used to study the microstructure changes of the multilayers. It is found that the W/Si multilayer exhibits an amorphous structure before and after annealing, while an enhanced diffusion and intermixing is the main reason for the stress relaxation and structure changes.

  15. Estimation of effective temperatures in a quantum annealer: Towards deep learning applications

    NASA Astrophysics Data System (ADS)

    Realpe-Gómez, John; Benedetti, Marcello; Perdomo-Ortiz, Alejandro

    Sampling is at the core of deep learning and more general machine learning applications; an increase in its efficiency would have a significant impact across several domains. Recently, quantum annealers have been proposed as a potential candidate to speed up these tasks, but several limitations still bar them from being used effectively. One of the main limitations, and the focus of this work, is that using the device's experimentally accessible temperature as a reference for sampling purposes leads to very poor correlation with the Boltzmann distribution it is programmed to sample from. Based on quantum dynamical arguments, one can expect that if the device indeed happens to be sampling from a Boltzmann-like distribution, it will correspond to one with an instance-dependent effective temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling processes. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the quantum-assisted training of Boltzmann machines, which can serve as a building block for deep learning architectures. This work was supported by NASA Ames Research Center.

  16. High-Temperature Annealing by Subatmospheric-Pressure Radio-Frequency Capacitively Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Miyake, Masatoshi; Yokogawa, Ken'etsu

    2012-08-01

    High-temperature annealing was performed by a novel annealing system using subatmospheric-pressure radio-frequency capacitively coupled plasma (SAP-CCP). The heating characteristics and stability of discharge were studied. An electrode temperature of 1900 °C was obtained with a stable and uniform glow-like discharge. Also, the characteristics of annealing were investigated using silicon wafers implanted with boron ions accelerated by 5 kV at doses of 2.0×1015 cm-2. The sheet resistance decreased with increasing annealing temperature in the same manner as in conventional rapid thermal annealing. As a result, a sheet resistance of 86 Ω/sq was successfully achieved at an electrode temperature of 1080 °C without any surface roughness.

  17. Energy dependence on formation of TiO{sub 2} nanofilms by Ti ion implantation and annealing

    SciTech Connect

    Liu, Yichao; Ren, Feng Cai, Guangxu; Zhou, Xiaodong; Hong, Mengqing; Li, Wenqing; Xiao, Xiangheng; Wu, Wei; Jiang, Changzhong

    2014-03-01

    Graphical abstract: - Highlights: • Fabrication of TiO{sub 2} films by ion implantation and annealing strongly depends on ion energy. • Best photocatalytic activity is achieved in the TiO{sub 2} nanofilm annealed at 1000 °C. • Phase transformation of TiO{sub 2} appears under annealing temperature of 900 °C. - Abstract: TiO{sub 2} nanofilms were fabricated by a solid-phase-growth progress. The silica glass slides were implanted with Ti ions to the fluence of 1.84 × 10{sup 17} ions/cm{sup 2} at accelerate voltages of 20, 50, and 80 kV, respectively. The samples were annealed in oxygen atmosphere at 700, 800, 900, and 1000 °C for 4 h, respectively. The influence of the ion energy and the annealing temperature on the formation and phase transformation of the TiO{sub 2} films was studied. It was found that anatase TiO{sub 2} nanofilms instead of embedded rutile TiO{sub 2} nanoparticles on the substrate surfaces when the energy of implanted Ti atoms was 20 kV.

  18. Effect of Solution Annealing Temperatures on the Crevice Corrosion Mode of Alloy 22

    SciTech Connect

    El-Dasher, B S; Etien, R; Torres, S G

    2005-10-31

    The effect of solution annealing temperature on the observed corrosion attack mode in Alloy 22 welds was assessed. Three types of specimens were examined, including the as-welded state, solution annealed for 20 minutes at 1121 C, and solution annealed for 20 minutes at 1200 C. The microstructures of the specimens were first mapped using electron backscatter diffraction to determine the grain structure evolution due to solution annealing. The specimens were then subjected to electrochemical testing in a 6 molal NaCl + 0.9 molal KNO{sub 3} environment to initiate crevice corrosion. Examination of the specimen surfaces after corrosion testing showed that in the as-welded specimen, corrosion was present in both the weld dendrites as well as around the secondary phases. However, the specimen solution annealed at 1121 C showed corrosion only at secondary phases and the specimen annealed at 1200 C showed pitting corrosion only in a handful of grains.

  19. Temperature Driven Annealing of Perforations in Bicellar Model Membranes

    SciTech Connect

    Nieh, Mu-Ping; Raghunathan, V.A.; Pabst, Georg; Harroun, Thad; Nagashima, K; Morales, H; Katsaras, John; Macdonald, P

    2011-01-01

    Bicellar model membranes composed of 1,2-dimyristoylphosphatidylcholine (DMPC) and 1,2-dihexanoylphosphatidylcholine (DHPC), with a DMPC/DHPC molar ratio of 5, and doped with the negatively charged lipid 1,2-dimyristoylphosphatidylglycerol (DMPG), at DMPG/DMPC molar ratios of 0.02 or 0.1, were examined using small angle neutron scattering (SANS), {sup 31}P NMR, and {sup 1}H pulsed field gradient (PFG) diffusion NMR with the goal of understanding temperature effects on the DHPC-dependent perforations in these self-assembled membrane mimetics. Over the temperature range studied via SANS (300-330 K), these bicellar lipid mixtures exhibited a well-ordered lamellar phase. The interlamellar spacing d increased with increasing temperature, in direct contrast to the decrease in d observed upon increasing temperature with otherwise identical lipid mixtures lacking DHPC. {sup 31}P NMR measurements on magnetically aligned bicellar mixtures of identical composition indicated a progressive migration of DHPC from regions of high curvature into planar regions with increasing temperature, and in accord with the 'mixed bicelle model' (Triba, M. N.; Warschawski, D. E.; Devaux, P. E. Biophys. J.2005, 88, 1887-1901). Parallel PFG diffusion NMR measurements of transbilayer water diffusion, where the observed diffusion is dependent on the fractional surface area of lamellar perforations, showed that transbilayer water diffusion decreased with increasing temperature. A model is proposed consistent with the SANS, {sup 31}P NMR, and PFG diffusion NMR data, wherein increasing temperature drives the progressive migration of DHPC out of high-curvature regions, consequently decreasing the fractional volume of lamellar perforations, so that water occupying these perforations redistributes into the interlamellar volume, thereby increasing the interlamellar spacing.

  20. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  1. Thermal annealing dependence of high-frequency magnetoimpedance in amorphous and nanocrystalline FeSiBCuNb ribbons.

    PubMed

    Hernando, B; Prida, V M; Sanchez, M L; Olivera, J; Garcia, C; Santos, J D; Alvarez, P; Sánchez, J L Ll; Perov, N

    2008-06-01

    The magnetoimpedance (MI) effect in Fe73.5Si13.5B9Nb3Cu1 melt-spun amorphous ribbons has been studied in the frequency range (1-500 MHz). Isothermal heating treatments in a furnace have been employed to nanocrystallize the ribbons (1 h at 565 degrees C in a vacuum of 10(-3) mbar), while other samples were annealed at lower temperatures (400 and 475 degrees C during 1 h), in order to evaluate the influence of the annealing temperature on the MI effect. The high-frequency impedance was measured using a technique based on the reflection coefficient measurements of a specific transmission line by using a network analyzer. Frequency dependence of the MI ratio, DeltaZ/Z, and both resistive, DeltaR/R, and reactive, DeltaX/X, components of magnetoimpedance were measured in the amorphous and annealed states, at different temperatures. A maximum value of the MI ratio of about 50% at a driving frequency of 18 MHz is obtained in the nanocrystalline (annealed at 565 degrees C) ribbon. Maxima for DeltaR/R of about 81% at 85 MHz and DeltaX/X around 140% at 5 MHz were also achieved. It is revealed that the microstructural evolution in the nanocrystalline sample leads to a magnetic softening, an optimum domain structure and a permeability which is sensitive to frequency and applied magnetic field, generating a large MI response.

  2. High temperature annealing of fission tracks in fluorapatite, Santa Fe Springs oil field, Los Angeles Basin, California

    USGS Publications Warehouse

    Naeser, Nancy D.; Crowley, Kevin D.; McCulloh, Thane H.; Reaves, Chris M.; ,

    1990-01-01

    Annealing of fission tracks is a kinetic process dependent primarily on temperature and to a laser extent on time. Several kinetic models of apatite annealing have been proposed. The predictive capabilities of these models for long-term geologic annealing have been limited to qualitative or semiquantitative at best, because of uncertainties associated with (1) the extrapolation of laboratory observations to geologic conditions, (2) the thermal histories of field samples, and (3) to some extent, the effect of apatite composition on reported annealing temperatures. Thermal history in the Santa Fe Springs oil field, Los Angeles Basin, California, is constrained by an exceptionally well known burial history and present-day temperature gradient. Sediment burial histories are continuous and tightly constrained from about 9 Ma to present, with an important tie at 3.4 Ma. No surface erosion and virtually no uplift were recorded during or since deposition of these sediments, so the burial history is simple and uniquely defined. Temperature gradient (???40??C km-1) is well established from oil-field operations. Fission-track data from the Santa Fe Springs area should thus provide one critical field test of kinetic annealing models for apatite. Fission-track analysis has been performed on apatites from sandstones of Pliocene to Miocene age from a deep drill hole at Santa Fe Springs. Apatite composition, determined by electron microprobe, is fluorapatite [average composition (F1.78Cl0.01OH0.21)] with very low chlorine content [less than Durango apatite; sample means range from 0.0 to 0.04 Cl atoms, calculated on the basis of 26(O, F, Cl, OH)], suggesting that the apatite is not unusually resistant to annealing. Fission tracks are preserved in these apatites at exceptionally high present-day temperatures. Track loss is not complete until temperatures reach the extreme of 167-178??C (at 3795-4090 m depth). The temperature-time annealing relationships indicated by the new data

  3. Different annealing temperature suitable for different Mg doped P-GaN

    NASA Astrophysics Data System (ADS)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

    2017-04-01

    In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

  4. Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature

    NASA Astrophysics Data System (ADS)

    Park, M. G.; Choi, W. S.; Boo, J.-H.; Kim, Y. T.; Yoon, D. H.; Hong, B.

    2002-06-01

    n this work, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiCa:H) films on annealing temperature (T_a) and radio frquency (RF) power. The substrate temperature (T_s was 250 °C, the RF power was varied from 30 W to 400 W, and the range of T_s, was from 400 °C to 600 °C. The a-SiC:H films were deposited by using PECVD (plasma enhanced chemical vapor deposition) system on Coming glass and p-type Si (100) wafer with a SiH4+CH4 gas tnudiue. The experimental results have shown that the optical band gap energy (E_g) of the aSiC:H thin films changed little with the annealing temperature while Eg increased with the RF power. The Raman spectnrn of the thin films annealed at high temperatures showed that graphitization of carbon clusters and rnicrocrystalline silicon occurs. The current voltage characteristics have shown good electrical properties in relation to the annealed films.

  5. Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts

    NASA Astrophysics Data System (ADS)

    Han, Lin-Chao; Shen, Hua-Jun; Liu, Ke-An; Wang, Yi-Yu; Tang, Yi-Dan; Bai, Yun; Xu, Heng-Yu; Wu, Yu-Dong; Liu, Xin-Yu

    2014-12-01

    Tung's model was used to analyze anomalies observed in Ti/SiC Schottky contacts. The degree of the inhomogeneous Schottky barrier after annealing at different temperatures is characterized by the ‘T0 anomaly’ and the difference (△Φ) between the uniformly high barrier height (ΦB0) and the effective barrier height (ΦBeff). Those two parameters of Ti Schottky contacts on 4H—SiC were deduced from I-V measurements in the temperature range of 298 K-503 K. The increase in Schottky barrier (SB) height (ΦB) and decrease in the ideality factor (n) with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the Schottky barrier depends on the annealing temperature, and it is at its lowest for 500-°C thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on Schottky contacts in other aspects.

  6. Investigation of solvent annealing time dependence on morphology formation in polystyrene-block-polylactide thin films

    NASA Astrophysics Data System (ADS)

    Gnabasik, Ryan; Nelson, Gunnar; Baruth, Andrew

    2015-03-01

    Solvent vapor annealing exposes a block polymer film to the vapors of one or more solvents, swelling the film. This process increases polymer mobility and can direct a self-assembly process by tuning the surface energy. Despite its efficacy to produce well-ordered, periodic nanostructures, no standardized production scheme exists. This is primarily due to a lack of understanding the intricate role multiple, incommensurate parameters play. By analogy to thermal annealing of elemental solids, the time a thin film spends in an equilibrium solvent concentration is one factor that will dictate the degree of ordering. To elucidate, optimized annealing conditions for perpendicular cylinder forming polystyrene-block-polylactide exist at solvent concentrations just below the order-disorder transition, where the kinetic and thermal processes required for recrystallization and crystal growth are optimally fast (similar to thermal annealing). By use of a purpose-built, climate-controlled solvent annealing chamber, we map out the annealing time dependence for non-optimized solvent concentrations. Namely, at lower solvent concentrations, where mobility is limited, longer times are required for large lateral correlation lengths. In situ spectral reflectance monitors solvent concentration, regulated viaa mass-flow controlled solvent inlet, offering precision control over annealing. Atomic force microscopy, in conjunction with O2 plasma etching, provides 3-dimensional imaging of the nanoscale morphology. This work was funded by NASA Nebraska Space Grant.

  7. Temperature dependent BRDF facility

    NASA Astrophysics Data System (ADS)

    Airola, Marc B.; Brown, Andrea M.; Hahn, Daniel V.; Thomas, Michael E.; Congdon, Elizabeth A.; Mehoke, Douglas S.

    2014-09-01

    Applications involving space based instrumentation and aerodynamically heated surfaces often require knowledge of the bi-directional reflectance distribution function (BRDF) of an exposed surface at high temperature. Addressing this need, the Johns Hopkins University Applied Physics Laboratory (JHU/APL) developed a BRDF facility that features a multiple-port vacuum chamber, multiple laser sources covering the spectral range from the longwave infrared to the ultraviolet, imaging pyrometry and laser heated samples. Laser heating eliminates stray light that would otherwise be seen from a furnace and requires minimal sample support structure, allowing low thermal conduction loss to be obtained, which is especially important at high temperatures. The goal is to measure the BRDF of ceramic-coated surfaces at temperatures in excess of 1000°C in a low background environment. Most ceramic samples are near blackbody in the longwave infrared, thus pyrometry using a LWIR camera can be very effective and accurate.

  8. Boron diffusion layer formation using Ge cryogenic implantation with low-temperature microwave annealing

    NASA Astrophysics Data System (ADS)

    Murakoshi, Atsushi; Harada, Tsubasa; Miyano, Kiyotaka; Harakawa, Hideaki; Aoyama, Tomonori; Yamashita, Hirofumi; Kohyama, Yusuke

    2016-04-01

    It is shown that a low-sheet-resistance p-type diffusion layer with a small diffusion depth can be fabricated efficiently by cryogenic boron and germanium implantation combined with low-temperature (400 °C) microwave annealing. Compared with the conventional annealing at 1000 °C, a much smaller diffusion depth is obtained at the same sheet resistance. The low sheet resistance at 400 °C is due to microwave absorption in the surface amorphous layer, which is formed by cryogenic germanium implantation. However, the pn junction leakage was worse than that in conventional annealing, because crystal defects remain near the amorphous/crystal interface after microwave annealing. It is found that the pn junction leakage is improved greatly by cryogenic germanium implantation. These results show that a suitable combination of cryogenic implantation and microwave annealing is very promising for p-type diffusion layer technology.

  9. Effect of annealing temperature on properties of RF sputtered Cu(In,Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Yu, Zhou; Yan, Chuanpeng; Yan, Yong; Zhang, Yanxia; Huang, Tao; Huang, Wen; Li, Shasha; Liu, Lian; Zhang, Yong; Zhao, Yong

    2012-09-01

    Cu(In,Ga)Se2 (CIGSe) thin films were prepared by radio frequency (RF) magnetron sputtering at room temperature, following vacuum annealing at different temperatures. We have investigated the effect of annealing temperature (150-550 °C) on the phase transformation process of the CIGSe films. The as-deposited precursor films show a near stoichiometry composition and amorphous structure. Composition loss of the films mainly occur in the annealing temperature range of 150-300 °C. Comparing with samples annealed at 300 °C, films annealed at 350 °C or higher temperatures exhibit almost similar composition and polycrystalline chalcopyrite structure. Crystal quality of the films improves with increasing annealing temperature. Reflectance spectra of the annealed films show interference fringe pattern. The calculated refractive indexes of the films are in the range of 2.4-2.5.

  10. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    NASA Technical Reports Server (NTRS)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  11. Effect of annealing temperature on the pitting corrosion resistance of super duplex stainless steel UNS S32750

    SciTech Connect

    Tan Hua; Jiang Yiming; Deng Bo; Sun Tao; Xu Juliang; Li Jin

    2009-09-15

    The pitting corrosion resistance of commercial super duplex stainless steels SAF2507 (UNS S32750) annealed at seven different temperatures ranging from 1030 deg. C to 1200 deg. C for 2 h has been investigated by means of potentiostatic critical pitting temperature. The microstructural evolution and pit morphologies of the specimens were studied through optical/scanning electron microscope. Increasing annealing temperature from 1030 deg. C to 1080 deg. C elevates the critical pitting temperature, whereas continuing to increase the annealing temperature to 1200 deg. C decreases the critical pitting temperature. The specimens annealed at 1080 deg. C for 2 h exhibit the best pitting corrosion resistance with the highest critical pitting temperature. The pit morphologies show that the pit initiation sites transfer from austenite phase to ferrite phase as the annealing temperature increases. The aforementioned results can be explained by the variation of pitting resistance equivalent number of ferrite and austenite phase as the annealing temperature changes.

  12. Fast simulated annealing with a multivariate Cauchy distribution and the configuration's initial temperature

    NASA Astrophysics Data System (ADS)

    Lee, Chang-Yong

    2015-05-01

    We propose a multi-dimensional fast simulated annealing method based on a multivariate Cauchy probability distribution and an initial temperature estimated from the configuration's variation. While conventional multi-dimensional fast simulated annealing adopts the product of onedimensional random variables generated by a univariate Cauchy distribution, the proposed method generates a random vector from a multivariate Cauchy distribution. In this way, fast simulated annealing for a multi-dimensional problem maintains the same annealing schedule as that for the one-dimensional case. The proposed method also utilizes the initial temperature estimated from the configuration's variation to generate a candidate state in addition to the conventional initial temperature derived from the variation of the objective function for the acceptance probability. The proposed method is shown not only to guarantee a fast annealing schedule but also to enhance the search capability. The proposed method was tested against the optimization of real-valued functions. We empirically found that the configuration's initial temperature, together with multivariate Cauchy distribution, is more suitable than the conventional scheme for a fast annealing schedule. Moreover, the proposed method outperforms the conventional one in optimization problems having many variables.

  13. Surface Superstructure of Carbon Nanotubes on Highly Oriented Pyrolytic Graphite Annealed at Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    An, Bai; Fukuyama, Seiji; Yokogawa, Kiyoshi; Yoshimura, Masamichi

    1998-06-01

    Carbon nanotubes deposited on highly oriented pyrolytic graphite (HOPG) are annealed in ultra high vacuum. The effect of annealing temperature on the surface morphology of the carbon nanotubes on HOPG is examined by scanning tunneling microscopy. The ring-like surface superstructure of (\\sqrt {3}× \\sqrt {3})R30° of graphite is found on the carbon nanotubes annealed above 1593 K. The tips of the carbon nanotubes are destroyed and the stacking misarrangement between the upper and the lower walls of the tube join with HOPG resulting in the superstructure.

  14. Low-temperature illumination and annealing of ultrahigh quality quantum wells

    NASA Astrophysics Data System (ADS)

    Samani, M.; Rossokhaty, A. V.; Sajadi, E.; Lüscher, S.; Folk, J. A.; Watson, J. D.; Gardner, G. C.; Manfra, M. J.

    2014-09-01

    The effects of low-temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the two-dimensional electron gas (2DEG) electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state.

  15. Temperature-dependent μ-Raman investigation of struvite crystals

    NASA Astrophysics Data System (ADS)

    Prywer, Jolanta; Kasprowicz, D.; Runka, T.

    2016-04-01

    The effect of temperature on the vibrational properties of struvite crystals grown from silica gels was systematically studied by μ-Raman spectroscopy. The time-dependent Raman spectra recorded in the process of long time annealing of struvite crystal at 353 K do not indicate structural changes in the struvite crystal with the time of annealing. The temperature-dependent Raman spectra recorded in the range 298-423 K reveal a phase transition in struvite at about 368 K. Above this characteristic temperature, some of bands assigned to vibrations of the PO4 and NH4 tetrahedra and water molecules observed in the Raman spectra in low temperatures (orthorhombic phase) change their spectral parameters or disappear, which indicates a transition to a higher symmetry structure of struvite in the range of high temperatures.

  16. Negative temperature dependence of recrystallized grain size: analytical formulation and experimental confirmation

    NASA Astrophysics Data System (ADS)

    Elmasry, M.; Liu, F.; Jiang, Y.; Mao, Z. N.; Liu, Y.; Wang, J. T.

    2017-01-01

    The catalyzing effect on nucleation of recrystallization from pre-existing grains is analyzed, analogy to the foreign nucleus size effect in heterogeneous nucleation. Analytical formulation of the effective nucleation site for recrystallization leads to a negative temperature dependence of recrystallized grain size. Non-isochronal annealing, where annealing time is set just enough for the completion of recrystallization at different temperature, is conducted on pure copper after severe plastic deformation. More homogeneous and smaller grains are obtained at higher annealing temperature. The good fitting between analytical and experimental results unveils the intrinsic feature of this negative temperature dependence of recrystallized grain size.

  17. Temperature dependency of quantitative ultrasound.

    PubMed

    Pocock, N A; Babichev, A; Culton, N; Graney, K; Rooney, J; Bell, D; Chu, J

    2000-01-01

    Quantitative ultrasound (QUS) parameters are temperature dependent. We examined the effect of temperature on QUS using Lunar Achilles+ and Hologic Sahara units. In vivo studies were performed in a cadaveric foot and in 5 volunteers. QUS scans were performed in the cadaveric foot, using both machines, at temperatures ranging from 15 to 40 degrees C. To assess the effect of change in water bath temperature in the Achilles+, independently of foot temperature, 5 volunteers were studied at water temperatures ranging from 10 to 42 degrees C. In the cadaveric foot there were strong negative correlations between temperature and speed of sound (SOS) but a moderately positive correlation between temperature and broadband ultrasound attenuation (BUA). Stiffness and the Quantitative Ultrasound Index (QUI) in the cadaveric foot showed strong negative correlations with temperature, reflecting their high dependence on SOS. In the 5 volunteers, in whom foot temperature was assumed to be constant, there was a small change in Stiffness in the Achilles+, with variation in water temperature. In conclusion, while there are opposite effects of temperature on SOS and BUA in vivo, there is still a significant effect of temperature variation on Stiffness and the QUI. This may have clinical significance in particular subjects. The precision of QUS may be affected by temperature variation of the environment or of the patient's limb. Instruments utilizing a water bath may be able partly to compensate for changes in environmental temperature, but standardization of water bath temperature is crucial to maximize precision.

  18. Effect of annealing temperature on the structure and optical parameters of Ge{sub 20}Se{sub 50}Te{sub 30} thin films

    SciTech Connect

    Mohamed, Mansour

    2015-05-15

    Highlights: • The amorphous nature of as prepared Ge{sub 20}Se{sub 50}Te{sub 30} films was confirmed by XRD. • The thermal annealing was found to affect the structure and optical parameter. • Thermal annealing resulted in an appearance of crystalline phases in studied films. • The average particle size increased with increasing the annealing temperature. • The indirect band gap was found to decrease with increasing annealing temperature. - Abstract: Bulk glasses and thin films of Ge{sub 20}Se{sub 50}Te{sub 30} were prepared by melt-quenching and thermal evaporation technique, respectively. The stoichiometry of the composition was checked by energy dispersive X-ray diffraction (EDX), whereas the crystallization was investigated using differential scanning calorimetery (DSC). The effect of heat treatment on the structure transformation of Ge{sub 20}Se{sub 50}Te{sub 30} films was determined by X-ray diffraction (XRD). The XRD results reveal that the as-prepared films are amorphous in nature while the annealed ones show crystalline phases. Further, the average crystallite size, strain, and dislocation density were found to depend on the annealing temperature. The optical transmittance and reflectance of the studied films at different annealing temperatures were measured using spectrophotometer. The optical parameters were calculated as a function of annealing temperature. The optical transition was found to be allowed indirect transition with optical band gap decreases from 1.69 to 1.41 eV with increasing the annealing temperature from 553 to 633 K.

  19. Ambient dependence of the phase of nanowires grown by annealing brass

    SciTech Connect

    Srivastava, Himanshu; Ganguli, Tapas; Tiwari, Pragya; Srivastava, A. K.; Deb, S. K.

    2012-06-05

    The growth of oxide nanowires has been studied by the annealing of brass (Cu 65%, Zn 35%) at different annealing temperatures and in different ambient. The annealing temperature was varied from 400 deg. C to 650 deg. C. Scanning Electron Microscope (SEM) results showed that the temperature has a significant effect on the density and size of the nanowires. The annealing temperature of 600 deg. C was found to be optimum for the growth of nanowires. The growth at 600 deg. C was observed in two ambient-air and moist nitrogen. Selected Area Electron Diffraction (SAED) and Energy Dispersive Spectroscopy (EDS) results on Transmission Electron Microscope (TEM) showed that with changing the ambient from air to moist nitrogen, the phase of the nanowires changed from Zn doped CuO to Cu doped ZnO. This result can be of significance importance as it suggests the use of ambient for the tuning of phase of oxide nanowires and in turn for the tuning of their physical properties.

  20. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  1. Investigation the cause of plasma treatment for low temperature annealed dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zen, Shungo; Komatsu, Yuta; Ono, Ryo

    2015-09-01

    Dye-sensitized solar cells (DSSCs) require annealing of TiO2photoelectrodes at 450 C to 550 C. However, such high-temperature annealing is unfavorable because it limits the use of materials that cannot withstand high temperatures, such as plastic substrates. In our previous paper, a low temperature annealing technique of TiO2 photoelectrodes using ultraviolet light and dielectric barrier discharge treatments was proposed to reduce the annealing temperature from 450 C to 150 C for a TiO2 paste containing an organic binder. Here, we investigated the cause of plasma treatment via the Nyquist diagram (Cole-Cole plot) of DSSCs. The Nyquist diagram was masured with a frequency response analyzer (NF Corporation, FRA5022) under 100 mW/cm2 illumination of a calibrated xenon lamp (Hamamatsu L2274, 150W). The lifetime of the electrons, the effective electron diffusion coefficient, and the electron diffusion length of TiO2 photoelectrodes were determined by analyzing the Nyquist diagrams. As a result of analyzing the Nyquist diagrams, it was shown that plasma treatment can reduce the electron transport resistance and promote the necking of Hot UV annealed TiO2 nanoparticles. This work was supported by Grant-in-Aid for JSPS Fellows.

  2. Estimation of effective temperatures in quantum annealers for sampling applications: A case study with possible applications in deep learning

    NASA Astrophysics Data System (ADS)

    Benedetti, Marcello; Realpe-Gómez, John; Biswas, Rupak; Perdomo-Ortiz, Alejandro

    2016-08-01

    An increase in the efficiency of sampling from Boltzmann distributions would have a significant impact on deep learning and other machine-learning applications. Recently, quantum annealers have been proposed as a potential candidate to speed up this task, but several limitations still bar these state-of-the-art technologies from being used effectively. One of the main limitations is that, while the device may indeed sample from a Boltzmann-like distribution, quantum dynamical arguments suggest it will do so with an instance-dependent effective temperature, different from its physical temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the learning of a special class of a restricted Boltzmann machine embedded on quantum hardware, which can serve as a building block for deep-learning architectures. We also provide a comparison to k -step contrastive divergence (CD-k ) with k up to 100. Although assuming a suitable fixed effective temperature also allows us to outperform one-step contrastive divergence (CD-1), only when using an instance-dependent effective temperature do we find a performance close to that of CD-100 for the case studied here.

  3. Increased cubic-tetragonal phase transition temperature and resistivity hysteresis of surface vacuum annealed SrTiO3

    NASA Astrophysics Data System (ADS)

    Nestler, Tina; Potzger, Kay; Stöcker, Hartmut; Abendroth, Barbara; Strohmeyer, Ralph; Zierer, Robert; Meyer, Dirk C.

    2011-10-01

    Electrical properties of SrTiO3 single crystal samples treated by an anisotropic surface annealing technique under reducing conditions have been investigated in the temperature range of 35 K-300 K. Optical and atomic force microscopy show that annealing gives rise to polycrystallization and the formation of colored dendritic structures. Carrier concentrations and mobilities determined by Hall measurements as well as resistivities detected by van der Pauw measurements show the expected metallic behavior due to oxygen vacancy doping. Moreover, the temperature dependent resistivities indicate a cubic-to-tetragonal phase transition, which to our knowledge has not been reported before. Additionally, the transition occurred up to 53 K above the known bulk transition temperature T C at 105 K with a hysteresis up to a temperature of 220 K. Both phenomena possibly arise from dislocations and associated strain fields introduced by surface annealing that are assumed to lower the free energy of the tetragonal phase and simultaneously pin tetragonal domains. Thus, microregions of the tetragonal phase persist above T C causing the hysteresis in resistivity up to ˜12%. This effect possibly provides new chances for future oxide based non-volatile data-storage devices.

  4. Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

    NASA Astrophysics Data System (ADS)

    Feng, G.; van Dijken, Sebastiaan; Feng, J. F.; Coey, J. M. D.; Leo, T.; Smith, David J.

    2009-02-01

    Co40Fe40B20/MgO single and double barrier magnetic tunnel junctions (MTJs) were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance (TMR) ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 mT. The lower TMR ratio for double barrier MTJs can be attributed to the amorphous nature of the middle Co40Fe40B20 free layer, which could not be crystallized during postannealing. A highly asymmetric bias voltage dependence of the TMR can be observed for both single and double barrier MTJs in the as-deposited states and after field annealing at low temperature. The asymmetry decreases with increasing annealing temperature and the bias dependence becomes almost symmetric after annealing at 350 °C. Maximum output voltages of 0.65 and 0.85 V were obtained for both single and double barrier MTJs, respectively, after annealing at 300 °C, a temperature which is high enough for large TMR ratios but insufficient to completely remove asymmetry from the TMR bias dependence.

  5. Temperature effects on failure and annealing behavior in dynamic random access memories

    NASA Astrophysics Data System (ADS)

    Wilkin, N. D.; Self, C. T.

    1982-12-01

    Total dose failure levels and long time anneal characteristics of dynamic random access memories are measured while the devices are exercised under actual use conditions. These measurements were performed over the temperature range of -60 C to +70 C. The total dose failure levels are shown to decrease with increasing temperature. The anneal characteristics are shown to result in both an increase and decrease in the measured number of errors as a function of time. Finally a description of the test instrumentation and irradiation procedures are given.

  6. Reflectance reduction of InP wafers after high-temperature annealing.

    PubMed

    Semyonov, Oleg G; Subashiev, Arsen V; Shabalov, Alexander; Lifshitz, Nadia; Chen, Zhichao; Hosoda, Takashi; Luryi, Serge

    2012-08-01

    Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in a wide spectral range from ultraviolet to infrared. The effect is due to formation of thermal oxide layers on the surfaces of the wafer with optical parameters favorable for antireflection.

  7. Low temperature thermoluminescence of annealed LiF:Mg, Cu, P

    NASA Astrophysics Data System (ADS)

    Yang, B.; Gao, H.; Townsend, P. D.

    2006-06-01

    Two main thermoluminescence peaks at 123 and 135 K, plus some weaker features near 65, 95, 242 and 265 K, have been observed in LiF:Mg, Cu, P dosimeter samples that had been annealed at 240 °C. The photon wavelengths in the main peaks span the spectral range from 250 to 470 nm and the maximum intensity is near 310 nm. The origin of these main TL peaks at 123 and 135 K are discussed in terms of a range of defect complexes linked to intrinsic defects. In particular the temperatures match the annealing stages for defect perturbed F-H and VK-e type recombination, respectively. The 65 K feature is considered as the result of electron-hole recombination via relaxed exciton decay. These models suggest reasons for the differences between the various emission bands and the longer wavelength emission linked to high temperature electron decay processes. High temperature annealing modifies the component low temperature TL features with annealing up to ∼300 °C resulting in low temperature TL signal loss, but with partial recovery found for all the low temperature TL peaks when the samples were annealed at higher temperatures up to 390 °C. It is suggested that the intensity loss and the recovery are the summation of numerous effects from a wide range of defect complex variations which exist in these heavily doped materials. The low temperature data offer further insights into the changes which occur in the structures related to optimising the high temperature TL dosimetry.

  8. High temperature annealing of MgO based perpendicular MTJ with Co/Pd multilayers

    NASA Astrophysics Data System (ADS)

    Tofizur Rahman, M.; Lyle, Andrew; Zhao, Hui; Wang, Jian-Ping

    2010-03-01

    MgO based perpendicular MTJ (pMTJ) are becoming increasing demanded due to their thermal stability and unlimited cell aspect ratio [1]. Promising results are reported for pMTJs with TbFeCo or Co/Pt (Pd,Ni) MLs but these materials could not withstand high temperature annealing above 250^oC. However, annealing at or above 300^oC is required to fully crystallize the MgO. We fabricated Sub/Pd/(Co/Pd)n/CoFeB/MgO/CoFeB/Pd/(Co/Pd)n/Pd pMTJ structure by engineering the exchange coupling between CoFeB and (Co/Pd)n and the interface morphology of Co and Pd in (Co/Pd)n layers and annealed at different temperatures up to 350^oC. To clarify the thermal effects on free layer completely, we also studied the annealing of free layer only. The perpendicular squareness of the free layer and the full stack after annealing at 350^oC are 0.90 and 1, respectively. The existence of good perpendicular anisotropy at high temperature is ascribed to the sharp and defect free interfaces. Field and spin torque switching results will also be presented.[4pt] [1] H.Meng, APL, 88, 172506 (2006),]M. Nakayama, JAP, 103, 07A710.

  9. Quantum-annealing correction at finite temperature: Ferromagnetic p -spin models

    NASA Astrophysics Data System (ADS)

    Matsuura, Shunji; Nishimori, Hidetoshi; Vinci, Walter; Albash, Tameem; Lidar, Daniel A.

    2017-02-01

    The performance of open-system quantum annealing is adversely affected by thermal excitations out of the ground state. While the presence of energy gaps between the ground and excited states suppresses such excitations, error correction techniques are required to ensure full scalability of quantum annealing. Quantum annealing correction (QAC) is a method that aims to improve the performance of quantum annealers when control over only the problem (final) Hamiltonian is possible, along with decoding. Building on our earlier work [S. Matsuura et al., Phys. Rev. Lett. 116, 220501 (2016), 10.1103/PhysRevLett.116.220501], we study QAC using analytical tools of statistical physics by considering the effects of temperature and a transverse field on the penalty qubits in the ferromagnetic p -body infinite-range transverse-field Ising model. We analyze the effect of QAC on second (p =2 ) and first (p ≥3 ) order phase transitions, and construct the phase diagram as a function of temperature and penalty strength. Our analysis reveals that for sufficiently low temperatures and in the absence of a transverse field on the penalty qubit, QAC breaks up a single, large free-energy barrier into multiple smaller ones. We find theoretical evidence for an optimal penalty strength in the case of a transverse field on the penalty qubit, a feature observed in QAC experiments. Our results provide further compelling evidence that QAC provides an advantage over unencoded quantum annealing.

  10. Effect of annealing temperature on wettability of TiO2 nanotube array films.

    PubMed

    Yang, Lei; Zhang, Miao; Shi, Shiwei; Lv, Jianguo; Song, Xueping; He, Gang; Sun, Zhaoqi

    2014-01-01

    Highly ordered TiO2 nanotube array (TN) films were prepared by anodization of titanium foil in a mixed electrolyte solution of glycerin and NH4F and then annealed at 200°C, 400°C, 600°C, and 800°C, respectively. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), water contact angle (WCA), and photoluminescence (PL). It was found that low temperature (below 600°C) has no significant influence on surface morphology, but the diameter of the nanotube increases from 40 to 50 nm with increasing temperature. At 800°C, the nanotube arrays are completely destroyed and only dense rutile film is observed. Samples unannealed and annealed at 200°C are amorphous. At 400°C, anatase phase appears. At 600°C, rutile phase appears. At 800°C, anatase phase changes into rutile phase completely. The wettability of the TN films shows that the WCAs for all samples freshly annealed at different temperatures are about 0°. After the annealed samples have been stored in air for 1 month, the WCAs increase to 130°, 133°, 135°, 141°, and 77°, respectively. Upon ultraviolet (UV) irradiation, they exhibit a significant transition from hydrophobicity to hydrophilicity. Especially, samples unannealed and annealed at 400°C show high photoinduced hydrophilicity.

  11. Radiation intensification of the reactor pressure vessels recovery by low temperature heat treatment (wet annealing)

    NASA Astrophysics Data System (ADS)

    Krasikov, E.

    2015-04-01

    As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. There are two approaches to annealing. The first one is so-called «dry» high temperature (∼475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment. The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible.

  12. Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

    NASA Astrophysics Data System (ADS)

    Akbarnejad, E.; Ghorannevis, Z.; Abbasi, F.; Ghoranneviss, M.

    2016-12-01

    Cadmium sulfide (CdS) thin films are deposited on the fluorine doped tin oxide coated glass substrate using the radio frequency magnetron sputtering setup. The effects of annealing in air on the structural, morphological, and optical properties of CdS thin film are studied. Optimal annealing temperature is investigated by annealing the CdS thin film at different annealing temperatures of 300, 400, and 500 °C. Thin films of CdS are characterized by X-ray diffractometer analysis, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR spectrophotometer and four point probe. The as-grown CdS films are found to be polycrystalline in nature with a mixture of cubic and hexagonal phases. By increasing the annealing temperature to 500 °C, CdS film showed cubic phase, indicating the phase transition of CdS. It is found from physical characterizations that the heat treatment in air increased the mean grain size, the transmission, and the surface roughness of the CdS thin film, which are desired to the application in solar cells as a window layer material.

  13. High-temperature annealing of proton irradiated beryllium – A dilatometry-based study

    SciTech Connect

    Simos, Nikolaos; Elbakhshwan, Mohamed; Zhong, Zhong; Ghose, Sanjit; Savkliyildiz, Ilyas

    2016-04-07

    S—200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 1020 cm–2 peak fluence and irradiation temperatures in the range of 100–200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was to qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation 4He and 3H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. Here, the study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.

  14. High-temperature annealing of proton irradiated beryllium - A dilatometry-based study

    NASA Astrophysics Data System (ADS)

    Simos, Nikolaos; Elbakhshwan, Mohamed; Zhong, Zhong; Ghose, Sanjit; Savkliyildiz, Ilyas

    2016-08-01

    Ssbnd 200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 1020 cm-2 peak fluence and irradiation temperatures in the range of 100-200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was to qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation 4He and 3H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. The study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.

  15. High-temperature annealing of proton irradiated beryllium – A dilatometry-based study

    DOE PAGES

    Simos, Nikolaos; Elbakhshwan, Mohamed; Zhong, Zhong; ...

    2016-04-07

    S—200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 1020 cm–2 peak fluence and irradiation temperatures in the range of 100–200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was tomore » qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation 4He and 3H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. Here, the study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.« less

  16. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures

    SciTech Connect

    Devine, R.A.B.; Mathiot, D.; Warren, W.L.; Fleetwood, D.M.

    1993-12-31

    Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

  17. The influence of annealing temperature on the strength of TRISO coated particles

    NASA Astrophysics Data System (ADS)

    van Rooyen, I. J.; Neethling, J. H.; van Rooyen, P. M.

    2010-07-01

    The integrity of the Pebble Bed Modular Reactor (PBMR) fuel, and specifically the SiC layer system of the Tristructural Isotropic (TRISO) coated particle (CP), namely inner pyrolytic carbon, silicon carbide and outer pyrolytic carbon (I-PyC-SiC-O-PyC), determines the containment of fission products. The PBMR fuel consists of TRISO coated particles (CPs) embedded in a graphite matrix. One of the characterization techniques investigated by PBMR is the determination of strength of CPs. It is a well known metallurgical fact that temperature, amongst many other parameters, may influence the strength of a material. A recently developed method for measuring the strength of the TRISO coated particles was used and is briefly described in this article. The advantages of this method are demonstrated by the comparison of strength measurements of five experimental PBMR CP batches as a function of annealing temperature. Significant modification of strength after annealing was measured with increased temperature within the range 1000-2100 °C. The interesting feature of decreasing standard deviation of the strength with increasing temperature will also be discussed with a possible explanation. A significant difference in coated particle strength is also demonstrated for two CP batches with layer thickness on the extremities of the SiC layer thickness specification. The effect of long duration annealing on these strength values will also be demonstrated by comparing results from 1 h to 100 h annealing periods of coated particles at a temperature of 1600 °C.

  18. Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers

    SciTech Connect

    Lee, Tae Young; Chan Won, Young; Su Son, Dong; Lee, Seong-Rae; Ho Lim, Sang

    2013-11-07

    The effects of Co layer thickness and annealing temperature on the perpendicular magnetic anisotropy (PMA) properties of inverted [Pt (0.2 nm)/Co (t{sub Co})]{sub 6} multilayers (where t{sub Co} indicates the thickness of the Co layer) have been investigated. The cross-sectional microstructure, as observed from the high-resolution transmission electron microscope images, shows a clear layered structure with atomically flat interfaces both in the as-deposited state as well as after annealing, indicating the interface effects for PMA. The effective PMA energy density (K{sub eff}) increases significantly with an increase in t{sub Co} from 0.2 to 0.28 nm and then becomes almost saturated with further increases in t{sub Co}, followed by a slight reduction at the highest Co thickness, t{sub Co} = 0.6 nm. In order to explain the t{sub Co} dependence on K{sub eff}, the intrinsic PMA energy density (K{sub i}) is calculated by additionally measuring a similar set of results for the saturation magnetization. The K{sub i} value increases nearly linearly with the increase in t{sub Co} from 0.2 to 0.5 nm, followed by saturation at a higher t{sub Co} value of 0.6 nm. Owing to a close relationship between K{sub i} and the quality of the interfaces, these results indicate a similar t{sub Co} dependence on the quality of the interfaces. This is further supported from the magnetic measurements of the samples annealed at the highest temperature of 500 °C, where a second phase is formed, which show a similar t{sub Co} dependence on the amount of the second phase. The K{sub i} value is nearly independent of the annealing temperature at t{sub Co} ≤ 0.4 nm, above which a substantial reduction is observed, when the annealing temperature exceeds 500 °C.

  19. Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2 multilayers

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Gambaryan, M. P.; Cherkov, A. G.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2016-08-01

    Germanium and GeSi nanocrystals were synthesized in SiGeO2 glass by high temperature annealings of GeOx(5 nm)/SiO2(5 nm) multilayers. According to electron microscopy data, the size distribution and stoichiometry of the nanocrystals depend on the annealing temperature (700, 800, or 900 °C). Spatial redistribution of Ge with the formation of large faceted nanocrystals located near the Si substrate and GeSi intermixing at the substrate/film interface were observed. In the case of the 900 °C annealed sample, we note that some nanocrystals have a pyramid-like shape. Infrared absorption spectroscopy demonstrates that intermixing takes place between the GeOx and SiO2 layers leading to the formation of SiGeO2 glass. Raman spectroscopy confirms the formation of Ge nanocrystals after annealing at 700 °C and GeSi nanocrystals after annealing at 800 and 900 °C. For all annealed samples, we report the observation of infrared photoluminescence (PL) at low temperatures in the spectral range 1300-2100 nm. The observation of PL at wavelengths close to 2000 nm may be due to defect-induced radiative transitions in the nanocrystals.

  20. Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

    SciTech Connect

    Vinattieri, A.; Batignani, F.; Bogani, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Zhu, D.; Humphreys, C. J.

    2014-02-21

    By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

  1. Alkali doping of graphene: The crucial role of high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Khademi, A.; Sajadi, E.; Dosanjh, P.; Bonn, D. A.; Folk, J. A.; Stöhr, A.; Starke, U.; Forti, S.

    2016-11-01

    The doping efficiency of lithium deposited at cryogenic temperatures on epitaxial and chemical vapor deposition monolayer graphene has been investigated under ultrahigh-vacuum conditions. Change of charge-carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements in low and high doping regimes. It was found that preannealing the graphene greatly enhanced the maximum levels of doping that could be achieved: doping saturated at Δ n =2 ×1013e- /cm2 without annealing, independent of sample type or previous processing; after a 900 K anneal, the saturated doping rose one order of magnitude to Δ n =2 ×1014e- /cm2.

  2. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    SciTech Connect

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U.; Nicolay, P.

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  3. Influence of annealing temperature and environment on the properties of indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Beling, C. D.; Fung, S.; Djurisic, A. B.; Ling, C. C.; Kwong, C.; Li, S.

    2005-06-01

    Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300°C but drastically drops at 400°C when they are annealed in forming gas (mixed N2 and H2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400°C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films.

  4. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    SciTech Connect

    Schmid, A. Schroeter, Ch.; Otto, R.; Heitmann, J.; Schuster, M.; Klemm, V.; Rafaja, D.

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  5. Asymptotics in Time, Temperature and Size for Optimization by Simulated Annealing: Theory, Practice and Applications

    DTIC Science & Technology

    1990-01-19

    and studying the growth of this bound as the tem- perature approaches zero asymptotically. Simulated annealing with a time varying temperature gives...rise to a time inhomogeneous Markov chain. This Markov chain is difficult to analyze and study due to the time-inhomogeneity. We have been able to...problem. Moreover, we can study the growth of this bound as the temperature approaches zero or skewness becomes arbitrarily large; thereby, providing

  6. Effect of annealing temperature on the structural reorganization of Eu3+ optical centers in Al2O3-Eu2O3-BiOF gel films

    NASA Astrophysics Data System (ADS)

    Malashkevich, G. E.; Kornienko, A. A.; Dunina, E. B.; Prusova, I. V.; Shevchenko, G. P.; Bokshits, Yu. V.

    2007-06-01

    The dependence of the structural reorganization of Eu3+ optical centers in Al2O3-Eu2O3-BiOF films on the annealing temperature has been investigated. It is shown by the methods of crystal field theory and computer simulation that the increase in the annealing temperature from 700 to 1100 °C leads to removal of bismuth from Eu-O-Bi complex centers with the C 3V symmetry in the Al2O3 structure and the change in symmetry from D 3 to O h for a large fraction of EuAlO3 centers.

  7. GeSi nanocrystals formed by high temperature annealing of GeO/SiO2 multilayers: structure and optical properties

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Cherkov, A. G.; Vdovin, V. I.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2016-12-01

    The structural and optical properties of Ge and GeSi nanocrystals, formed by annealing of GeO/SiO2 multilayers have been investigated. According to Raman spectroscopy, the formation of pure Ge nanocrystals is observed after post growth annealing at 700 °C. Annealings at 800°C-900°C leads to the formation of intermixed GexSi1-x nanocrystals. High resolution transmission electron microscopy shows that the structure and the size of the nanocrystals strongly depend on annealing temperature. Spatial redistribution of Ge with the formation of large faceted clusters located near the Si substrate as well as GeSi intermixing at the substrate/film interface were observed. In the case of the sample containing 20 pairs of GeO/SiO2 layers annealed at 900 °C, some clusters exhibit a pyramid-like shape. FTIR absorption spectroscopy measurements demonstrate that intermixing between the GeO and SiO2 layers occurs leading to the formation of a SiGeO2 glass. Low temperature (10 K-100 K) photoluminescence was observed in the spectral range 1400-2000 nm for samples containing nanocrystals. The temperature dependence of the photoluminescence is studied.

  8. Resonance electromagnetoacoustic method of measuring viscoelastic properties of amorphous ferromagnetic ribbons subjected to low-temperature annealing

    NASA Astrophysics Data System (ADS)

    Len'kov, S. V.; Fedorova, N. V.

    2014-08-01

    Stationary and damped vibrations of the s 0 Lamb mode in a viscoelastic amorphous ferromagnetic ribbon excited upon the electromagnetoacoustic (EMA) transformation have been considered. A resonance method is suggested that employs double EMA transformation for measuring elasticity moduli E and internal friction in amorphous ferromagnetic ribbons. The effect of low-temperature isochronous annealing on the field dependences of Young's modulus and internal friction of the Fe80Si10B10 and Fe73.7Cu1.0Nb3.2Si12.7B9.4 alloys has been studied.

  9. Effect of low temperature anneals and nonthermal treatments on the properties of gap fill oxides used in SiGe and III-V devices

    NASA Astrophysics Data System (ADS)

    Ryan, E. Todd; Morin, Pierre; Madan, Anita; Mehta, Sanjay

    2016-07-01

    Silicon dioxide is used to electrically isolate CMOS devices such as fin field effect transistors by filling gaps between the devices (also known as shallow trench isolation). The gap fill oxide typically requires a high temperature anneal in excess of 1000 °C to achieve adequate electrical properties and oxide densification to make the oxide compatible with subsequent fabrication steps such as fin reveal etch. However, the transition from Si-based devices to high mobility channel materials such as SiGe and III-V semiconductors imposes more severe thermal limitations on the processes used for device fabrication, including gap fill oxide annealing. This study provides a framework to quantify and model the effect of anneal temperature and time on the densification of a flowable silicon dioxide as measured by wet etch rate. The experimental wet etch rates allowed the determination of the activation energy and anneal time dependence for oxide densification. Dopant and self-diffusion can degrade the channel material above a critical temperature. We present a model of self-diffusion of Ge and Si in SiGe materials. Together these data allowed us to map the thermal process space for acceptable oxide wet etch rate and self-diffusion. The methodology is also applicable to III-V devices, which require even lower thermal budget. The results highlight the need for nonthermal oxide densification methods such as ultraviolet (UV) and plasma treatments. We demonstrate that several plasma treatments, in place of high temperature annealing, improved the properties of flowable oxide. In addition, UV curing prior to thermal annealing enables acceptable densification with dramatically reduced anneal temperature.

  10. Role of annealing temperatures on the evolution of microstructure and properties of Cr2O3 films

    NASA Astrophysics Data System (ADS)

    He, Nairu; Ji, Li; Liu, Xiaohong; Li, Hongxuan; Zhou, Huidi; Chen, Jianmin

    2015-12-01

    Cr2O3 films were deposited on Ni-based high-temperature alloy substrates by using a cathodic arc ion plating system and then annealed in air at different temperatures. The effects of different annealing temperatures on the microstructure, mechanical and tribological properties of the films were examined. Results showed that the as-deposited Cr2O3 films were primarily amorphous with crystallization and vaporization temperatures of 360 °C and 940 °C, respectively. Annealing above the crystallization temperature improved the hardness, adhesion, and wear life of the Cr2O3 films. A mesh-like heave structure comprising Cr2O3 and Cr2Ti7O17 phases formed on the film surface after annealing above the vaporization temperature. The mesh-like heave structure endued the film with excellent tribological properties in a wide temperature range from room temperature (RT) to 1000 °C.

  11. An investigation of temperature measurement methods in nuclear power plant reactor pressure vessel annealing

    SciTech Connect

    Acton, R.U.; Gill, W.; Sais, D.J.; Schulze, D.H.; Nakos, J.T.

    1996-05-01

    The objective of this project was to provide an assessment of several methods by which the temperature of a commercial nuclear power plant reactor pressure vessel (RPV) could be measured during an annealing process. This project was a coordinated effort between DOE`s Office of Nuclear Energy, Science and Technology; DOE`s Light Water Reactor Technology Center at Sandia National Laboratories; and the Electric Power Research Institute`s Non- Destructive Evaluation Center. Ball- thermocouple probes similar to those described in NUREG/CR-5760, spring-loaded, metal- sheathed thermocouple probes, and 1778 air- suspended thermocouples were investigated in experiments that heated a section of an RPV wall to simulate a thermal annealing treatment. A parametric study of ball material, emissivity, thermal conductivity, and thermocouple function locations was conducted. Also investigated was a sheathed thermocouple failure mode known as shunting (electrical breakdown of insulation separating the thermocouple wires). Large errors were found between the temperature as measured by the probes and the true RPV wall temperature during heat-up and cool-down. At the annealing soak temperature, in this case 454{degrees}C [850`F], all sensors measured the same temperature within about {plus_minus}5% (23.6{degrees}C [42.5{degrees}F]). Because of these errors, actual RPV wall heating and cooling rates differed from those prescribed (by up to 29%). Shunting does not appear to be a problem under these conditions. The large temperature measurement errors led to the development of a thermal model that predicts the RPV wall temperature from the temperature of a ball- probe. Comparisons between the model and the experimental data for ball-probes indicate that the model could be a useful tool in predicting the actual RPV temperature based on the indicated ball- probe temperature. The model does not predict the temperature as well for the spring-loaded and air suspended probes.

  12. Luminescence Studies of Residual Damage in Low-Dose Arsenic Implanted Silicon after High-Temperature Annealing

    NASA Astrophysics Data System (ADS)

    Sagara, Akihiko; Hiraiwa, Miori; Shibata, Satoshi; Sugie, Ryuichi; Yamada, Keiichi

    2011-01-01

    In order to prevent the degradation of device performance, it is necessary to detect and reduce residual damage remaining after ion implantation and annealing. In this study, we focused on the high-temperature annealing process after low-dose arsenic (As) implantation in silicon (Si) and evaluated the correlation of annealing conditions and damage by cathodoluminescence (CL) compared to Secondary Ion Mass Spectrometry (SIMS) and Junction Photo-Voltage (JPV) results. Increasing the annealing temperature with the high-heat-up rate, As profile and the sheet resistance didn't change. However, the intensity of the band-to-band transition increased with temperature. This implies the some kind of residual damage remains after low-temperature annealing and it is removed with increasing annealing temperature. On the other hand, with increasing the annealing time at 1200 °C, more As was piled-up at the SiO2/Si interface and the luminescence intensity decreased. We guess this piled-up As is inactive and it may create some kind of damage combined with the defects around the interface, and these damage types cause the suppression of the luminescence intensity. We concluded that the luminescence intensity reflects the various kinds of damage and optical characterization methods have a potential to evaluate defect evolution in annealing process.

  13. The effect of size on the strength of FCC metals at elevated temperatures: annealed copper

    PubMed Central

    Wheeler, Jeffrey M.; Kirchlechner, Christoph; Micha, Jean-Sébastien; Michler, Johann; Kiener, Daniel

    2016-01-01

    Abstract As the length scale of sample dimensions is reduced to the micron and sub-micron scales, the strength of various materials has been observed to increase with decreasing size, a fact commonly referred to as the ‘sample size effect’. In this work, the influence of temperature on the sample size effect in copper is investigated using in situ microcompression testing at 25, 200 and 400 °C in the SEM on vacuum-annealed copper structures, and the resulting deformed structures were analysed using X-ray μLaue diffraction and scanning electron microscopy. For pillars with sizes between 0.4 and 4 μm, the size effect was measured to be constant with temperature, within the measurement precision, up to half of the melting point of copper. It is expected that the size effect will remain constant with temperature until diffusion-controlled dislocation motion becomes significant at higher temperatures and/or lower strain rates. Furthermore, the annealing treatment of the copper micropillars produced structures which yielded at stresses three times greater than their un-annealed, FIB-machined counterparts. PMID:28003795

  14. The effect of size on the strength of FCC metals at elevated temperatures: annealed copper.

    PubMed

    Wheeler, Jeffrey M; Kirchlechner, Christoph; Micha, Jean-Sébastien; Michler, Johann; Kiener, Daniel

    2016-12-01

    As the length scale of sample dimensions is reduced to the micron and sub-micron scales, the strength of various materials has been observed to increase with decreasing size, a fact commonly referred to as the 'sample size effect'. In this work, the influence of temperature on the sample size effect in copper is investigated using in situ microcompression testing at 25, 200 and 400 °C in the SEM on vacuum-annealed copper structures, and the resulting deformed structures were analysed using X-ray μLaue diffraction and scanning electron microscopy. For pillars with sizes between 0.4 and 4 μm, the size effect was measured to be constant with temperature, within the measurement precision, up to half of the melting point of copper. It is expected that the size effect will remain constant with temperature until diffusion-controlled dislocation motion becomes significant at higher temperatures and/or lower strain rates. Furthermore, the annealing treatment of the copper micropillars produced structures which yielded at stresses three times greater than their un-annealed, FIB-machined counterparts.

  15. Dielectric relaxation and conduction mechanisms in sprayed TiO2 thin films as a function of the annealing temperature

    NASA Astrophysics Data System (ADS)

    Juma, Albert; Acik, Ilona Oja; Mere, Arvo; Krunks, Malle

    2016-04-01

    The electrical properties of TiO2 thin films deposited by chemical spray pyrolysis onto Si substrates were investigated in the metal-oxide-semiconductor (MOS) configuration using current-voltage characteristics and impedance spectroscopy. The electrical properties were analyzed in relation to the changes in microstructure induced during annealing in air up to a temperature of 950 °C. Anatase to rutile transformation started after annealing at 800 °C, and at 950 °C, only the rutile phase was present. The dielectric relaxation strongly depended upon the microstructure of TiO2 with the dielectric constant for the anatase phase between 45 and 50 and that for the rutile phase 123. Leakage current was reduced by three orders of magnitude after annealing at 700 °C due to the densification of the TiO2 film. A double-logarithmic plot of the current-voltage characteristics showed a linear relationship below 0.12 V consistent with Ohmic conduction, while space-charge-limited conduction mechanism as described by Child's law dominated for bias voltages above 0.12 V.

  16. A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

    SciTech Connect

    Pristavu, G.; Brezeanu, G.; Badila, M.; Pascu, R.; Danila, M.; Godignon, P.

    2015-06-29

    Ni Schottky contacts on SiC have a nonideal behavior, with strong temperature dependence of the electrical parameters, caused by a mixed barrier on the contact area and interface states. A simple analytical model that establishes a quantitative correlation between Schottky contact parameter variation with temperature and barrier height non-uniformity is proposed. A Schottky contact surface with double Schottky barrier is considered. The main model parameters are the lower barrier (Φ{sub Bn,l}) and a p factor which quantitatively evaluates the barrier non-uniformity on the Schottky contact area. The model is validated on Ni/4H-SiC Schottky contacts, post metallization sintered at high temperatures. The measured I{sub F}–V{sub F}–T characteristics, selected so as not to be affected by interface states, were used for model correlation. An inhomogeneous double Schottky barrier (with both nickel silicide and Ni droplets at the interface) is formed by a rapid thermal annealing (RTA) at 750 °C. High values of the p parameter are obtained from samples annealed at this temperature, using the proposed model. A significant improvement in the electrical properties occurs following RTA at 800 °C. The expansion of the Ni{sub 2}Si phase on the whole contact area is evinced by an X-Ray diffraction investigation. In this case, the p factor is much lower, attesting the uniformity of the contact. The model makes it possible to evaluate the real Schottky barrier, for a homogenous Schottky contact. Using data measured on samples annealed at 800 °C, a true barrier height of around 1.73 V has been obtained for Ni{sub 2}Si/4H-SiC Schottky contacts.

  17. Evolution of patterned step structure on vicinal Si(111) surface during high temperature annealing

    NASA Astrophysics Data System (ADS)

    Kan, Hung-Chih; Kwon, Taesoon; Phaneuf, Raymond

    2007-03-01

    We present the results of numerical simulations of the evolution of patterned step structures on vicinal Si(111) surfaces during high temperature annealing, which presumably drives the surface far away from equilibrium. We use a mesoscopic model [1] to describe the motion of individual steps under the effects of sublimation, step stiffness (line tension), and step-step interaction. The qualitative consistency between our simulation and experiment [2] suggest that thermodynamic driving force, such as the step-stiffness and step-step interaction dominate the evolution of the step structure during high temperature annealing. [1] J. D. Weeks, D.-J. Lui, and H.-C. Jeong, in Dynamics of Crystal Surfaces and Interfaces, edited by P. M. Duxbury and T.J. Pence (Plenum Press, New York and London 1997), pp. 199-216 [2] T. Kwon, H-C. Kan, R. J. Phaneuf, Appl. Phys. Lett. 88, 071914 (2006) .

  18. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    SciTech Connect

    Kashiwar, A.; Vennela, N. Phani; Kamath, S.L.; Khatirkar, R.K.

    2012-12-15

    In the present study, effect of solution annealing temperature (1050 Degree-Sign C and 1100 Degree-Sign C) and isothermal ageing (700 Degree-Sign C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel ({approx} 45% ferrite and {approx} 55% austenite) undergoes a series of metallurgical transformations during ageing-formation of secondary austenite ({gamma}{sub 2}) and precipitation of Cr and Mo rich intermetallic (chi-{chi} and sigma-{sigma}) phases. For solution annealing at 1050 Degree-Sign C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 Degree-Sign C. {chi} Phase precipitated after the precipitation of carbides-preferentially at the ferrite-ferrite and also at the ferrite-austenite boundaries. {sigma} Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 Degree-Sign C was found to be carbides {yields} {chi} {yields} {sigma}. On the contrary, for samples solution annealed at 1100 Degree-Sign C, the precipitation of {chi} phase was negligible. {chi} Phase precipitated before {sigma} phase, preferentially along the ferrite-ferrite grain boundaries and was later consumed in the {sigma} phase precipitation. The {sigma} phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite {gamma}{sub 2} and {sigma} phase in the ferrite and along the ferrite-austenite grain boundaries. An increase in the volume fraction of {gamma}{sub 2} and {sigma} phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights

  19. On the Room-Temperature Annealing of Cryogenically-Rolled Copper (Preprint)

    DTIC Science & Technology

    2011-07-01

    Institute for Metals Superplasticity Problems, Russian Academy of Science, 39 Khalturin Str., Ufa , 450001, Russia 2 Department of Materials...a circle (i.e., the so-called grain reconstruction method [11]). For the deformed phase, the grain thickness was measured using the linear-intercept... method . 3. EBSD DATA-ANALYSIS PROCEDURES Room-temperature annealing of cryogenically rolled copper occurs relatively slowly. When the present

  20. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    DOE PAGES

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; ...

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

  1. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    SciTech Connect

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Guiseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.

  2. Annealing temperature window for tunneling magnetoresistance and spin torque switching in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Meng, H.; Sbiaa, R.; Wang, C. C.; Lua, S. Y. H.; Akhtar, M. A. K.

    2011-11-01

    Annealing temperature (Ta) and free layer thickness dependencies of magnetic properties and spin-transfer torque switching were investigated in CoFeB-MgO based magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA). Annealing process was found to be critical to buildup PMA. As Ta increases, switching field of free layer and reference layer is enhanced first then drops, corresponding to the improvement and collapse of PMA in both layers. However, it should be noted that PMA of free layer and the tunneling magnetoresistive (TMR) are maximized at different Ta zones. Spin transfer torque study pointed out that switching current density (Jc) depends on the combined effects from PMA, spin polarization, and saturation magnetization, which all depend on Ta values. Thickness dependence study revealed that Jc relies on the competing results of the thickness and PMA. The lowest critical switching current density achieved is 2.1 MA/cm2, accompanied with a TMR around 52% at room temperature.

  3. Temperature dependence of basalt weathering

    NASA Astrophysics Data System (ADS)

    Li, Gaojun; Hartmann, Jens; Derry, Louis A.; West, A. Joshua; You, Chen-Feng; Long, Xiaoyong; Zhan, Tao; Li, Laifeng; Li, Gen; Qiu, Wenhong; Li, Tao; Liu, Lianwen; Chen, Yang; Ji, Junfeng; Zhao, Liang; Chen, Jun

    2016-06-01

    The homeostatic balance of Earth's long-term carbon cycle and the equable state of Earth's climate are maintained by negative feedbacks between the levels of atmospheric CO2 and the chemical weathering rate of silicate rocks. Though clearly demonstrated by well-controlled laboratory dissolution experiments, the temperature dependence of silicate weathering rates, hypothesized to play a central role in these weathering feedbacks, has been difficult to quantify clearly in natural settings at landscape scale. By compiling data from basaltic catchments worldwide and considering only inactive volcanic fields (IVFs), here we show that the rate of CO2 consumption associated with the weathering of basaltic rocks is strongly correlated with mean annual temperature (MAT) as predicted by chemical kinetics. Relations between temperature and CO2 consumption rate for active volcanic fields (AVFs) are complicated by other factors such as eruption age, hydrothermal activity, and hydrological complexities. On the basis of this updated data compilation we are not able to distinguish whether or not there is a significant runoff control on basalt weathering rates. Nonetheless, the simple temperature control as observed in this global dataset implies that basalt weathering could be an effective mechanism for Earth to modulate long-term carbon cycle perturbations.

  4. Size Dependence of Oxygen-Annealing Effects on Superconductivity of Fe1+yTe1-xSx

    NASA Astrophysics Data System (ADS)

    Yamazaki, Teruo; Sakurai, Tatsuya; Yaguchi, Hiroshi

    2016-11-01

    For the Fe-based superconductor Fe1+yTe1-xSx, superconductivity is induced by annealing treatment in oxygen atmosphere, whereas as-grown samples do not show superconductivity. We investigated the sample-size dependence of O2-annealing effects in Fe1.01Te0.91S0.09. The annealing conditions were fixed to 1 atm, 200 °C, and 2 h. We carried out magnetic susceptibility and specific heat measurements in order to evaluate the superconducting volume fraction. We found that Fe1+yTe1-xSx has an optimal size for the induction of bulk superconductivity by O2 annealing. Our results indicate that O2 annealing is probably effective near the surface of samples over a length of a few tens of micro meters.

  5. Evolution of Self-Assembled Au NPs by Controlling Annealing Temperature and Dwelling Time on Sapphire (0001).

    PubMed

    Lee, Jihoon; Pandey, Puran; Sui, Mao; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar

    2015-12-01

    Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C.

  6. Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

    NASA Astrophysics Data System (ADS)

    Vasudevan, R.; Poli, I.; Deligiannis, D.; Zeman, M.; Smets, A. H. M.

    2016-11-01

    This work adapts a model to simulate the carrier injection dependent minority carrier lifetime of crystalline silicon passivated with hydrogenated amorphous silicon at elevated temperatures. Two existing models that respectively calculate the bulk lifetime and surface recombination velocity are used and the full temperature dependency of these models are explored. After a thorough description of these temperature dependencies, experimental results using this model show that the minority carrier lifetime changes upon annealing of silicon heterojunction structures are not universal. Furthermore, comparisons of the temperature dependent model to using the room temperature model at elevated temperatures is given and significant differences are observed when using temperatures above 100 °C. This shows the necessity of taking temperature effects into account during in-situ annealing experiments.

  7. Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Nemoz, Maud; Dagher, Roy; Matta, Samuel; Michon, Adrien; Vennéguès, Philippe; Brault, Julien

    2017-03-01

    AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as confirmed by transmission electron microscopy (TEM) images, up to 75%. Moreover, it is found that annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process. In addition, the morphological properties of the films were determined by atomic force microscopy (AFM) and show that the annealing conditions have a strong impact on the surface morphology and roughness. Finally, an annealing at 1550 °C for 20 min appears as an ideal tradeoff to enhance the structural properties while preserving the initial AlN surface morphology.

  8. Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for Silicon Surface Passivation.

    PubMed

    Balaji, Nagarajan; Park, Cheolmin; Chung, Sungyoun; Ju, Minkyu; Raja, Jayapal; Yi, Junsin

    2016-05-01

    High quality surface passivation has gained a significant importance in photovoltaic industry for reducing the surface recombination and hence fabricating low cost and high efficiency solar cells using thinner wafers. The formation of good-quality SiO2 films and SiO2/Si interfaces at low processing temperatures is a prerequisite for improving the conversion efficiency of industrial solar cells with better passivation. High-temperature annealing in inert ambient is promising to improve the SiO2/Si interface. However, annealing treatments could cause negative effects on SiO2/Si interfaces due to its chemical at high temperatures. Low temperature post oxidation annealing has been carried out to investigate the structural and interface properties of Si-SiO2 system. Quasi Steady State Photo Conductance measurements shows a promising effective carrier lifetime of 420 μs, surface recombination velocity of 22 cm/s and a low interface trap density (D(it)) of 4 x 10(11) states/cm2/eV after annealing. The fixed oxide charge density was reduced to 1 x 10(11)/cm2 due to the annealing at 500 degrees C. The FWHM and the Si-O peak wavenumber corresponding to the samples annealed at 500 degrees C reveals that the Si dangling bonds in the SiO2 films due to the oxygen defects was reduced by the low temperature post oxidation annealing.

  9. Effects of annealing on the polymorphic structure of starches from sweet potatoes (Ayamurasaki and Sunnyred cultivars) grown at various soil temperatures.

    PubMed

    Genkina, Natalia K; Wasserman, Lyubov A; Noda, Takahiro; Tester, Richard F; Yuryev, Vladimir P

    2004-04-28

    Starches extracted from the sweet potato cultivars Sunnyred and Ayamurasaki grown at 15 or 33 degrees C (soil temperature) were annealed in excess water (3 mg starch/mL water) for different times (1, 4, 8 or 10h) at the temperatures 2-3 degrees K below the onset melting temperature. The structures of annealed starches, as well as their gelatinisation (melting) properties, were studied using high-sensitivity differential scanning calorimetry (HSDSC). In excess water, the single endothermic peak shifted to higher temperatures, while the melting (gelatinisation) enthalpy changed only very slightly, if any. The elevation of gelatinisation temperature was associated with increasing order/thickness of the crystalline lamellae. The only DSC endotherm identified in 0.6 M KCl for Sunnyred starch grown at 33 degrees C was attributed to A-type polymorphic structure. The multiple endothermic forms observed by DSC performed in 0.6M KCl for annealed starches from both cultivars grown at 15 degrees C provided evidence of a complex C-type (A- plus B-type) polymorphic structure of crystalline lamellae. The A:B-ratio of two polymorphic forms increased upon annealing due to partial transformation of B- to A-polymorph, which was time dependent. Long heating periods facilitated the maximal transformation of B- to A-polymorph associated with limited A:B ratio.

  10. Room temperature observation of high spin polarization in post annealed Co2FeSi/MgO/n+-Si on insulator devices

    NASA Astrophysics Data System (ADS)

    Tiwari, Ajay; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tezuka, Nobuki; Saito, Yoshiaki

    2017-04-01

    The post annealing temperature dependence of room temperature spin signals in Co2FeSi/MgO/n+-Si on insulator fabricated on Si(2×1) surface was investigated. For the devices fabricated on the Si(2×1) surface, the large and reliable three- and four-terminals spin signals were obtained even at room temperature. The magnitude of three-terminal narrow Hanle signals has a peak around 325 °C with respect to post annealing temperature. The trend of increasing spin accumulation signal with decreasing bias voltage was observed for both as deposited and sample annealed at 325 °C in the bias voltage range 600–800 mV. The enhancement of three- and four-terminals non-local magnetoresistance (MR) for post annealed sample at 325 °C, indicates that the spin polarization increases due to the structural ordering of Heusler alloy Co2FeSi. As a result, we observed large spin injection efficiency into Si (P ∼ 41.7%) even at room temperature. These results will pave a way to the future Si spintronics devices such a spin-MOSFET.

  11. Effect of Annealing Temperature and Time on Microstructure and Mechanical Properties of Multilayered Steel Composite Sheets

    NASA Astrophysics Data System (ADS)

    Cao, R.; Yu, X.; Feng, Z.; Ojima, M.; Inoue, J.; Koseki, T.

    2016-12-01

    Multilayered composite steels consisting of alternating layers of martensitic phase and austenitic phase exhibit an excellent combination of strength and elongation compared with conventional advanced high-strength steels. The deformation processes underlying these properties are of considerable interest. In this article, microstructure, grain size, and phase are characterized by scanning electron microscopy (SEM) and electron backscattering diffraction. The hardness of each layer is analyzed by a microindentation hardness testing system. Finally, the deformation and failure processes in multilayered steel are investigated by in-situ SEM. The hardness results indicate that various hardening modes occur in the soft austenitic layer and the hard martensitic layer. In- situ SEM results combined with microstructure analysis and hardness results reveal that annealing temperature and annealing time have a significant impact on final microstructure, fracture behavior, strength, hardness, and ductility.

  12. Sub-surface oxide features at the aluminum-sapphire interface after low temperature annealing

    NASA Astrophysics Data System (ADS)

    Dutta, Sreya

    This work focuses on the formation of sub-surface oxide features that form at the aluminum-sapphire interface during a low temperature heat-treatment. The features consist of two parts, stable alpha-alumina ridges on the substrate, and faceted pyramidal structures composed of thin, low-temperature oxide shells that are bounded by the ridges. It is surprising to observe the formation of thermodynamically stable alpha-alumina at a low temperature. The ridges are epitaxial with the (0001) sapphire substrate and the overlying metal. The pyramidal features resemble closely the Wulff shape in aluminum. Experiments show that these features are underlying the annealing hillocks. This work is a detailed study of such oxide interfacial features associated with hollow hillocks. At the annealing temperatures (below the melting point of aluminum), the aluminum thin film is subjected to compressive stresses arising from the thermal expansion coefficient mismatch and this is aided by dewetting at the aluminum-sapphire interface. Creep cavitation and grain boundary sliding are postulated to help in the cavity formation. Annealing holes are also observed in the thin films. Two different types of holes are seen: dendritic branched holes and hexagonal faceted holes (drums). At lower temperature and thickness, dendritic holes are seen to be formed at the grain boundaries. The drums form within the grains at higher temperatures and in thicker films. The drums have a surface oxide layer suspended on the top. It is postulated that clustering of vacancies due to the presence of irregularities, defects, and dislocations at the interface as well as dewetting causes the nucleation of the drums at the interface. Numerous hillock-hole couples were seen. Thinning of the metal in areas near the hillocks could possibly aid in the hole formation process. It is speculated that the hole growth occurred during the cooling stage when the film was subjected to tensile stresses. Another interesting

  13. Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO2 thin films by sol-gel method

    NASA Astrophysics Data System (ADS)

    Muaz, A. K. M.; Hashim, U.; Arshad, M. K. Md.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Liu, Wei-Wen; Foo, K. L.

    2016-07-01

    In this paper, the sol-gel method is used to prepare nanoparticles titanium dioxide (TiO2) thin films at different annealing temperature. The prepared sol was deposited on the p-SiO2 substrates by spin coating technique under room temperature. The nanoparticles TiO2 solution was synthesized using Ti{OCH(CH3)2}4 as a precursor with an methanol solution at a molar ratio 1:10. The prepared TiO2 sols will further validate through structural, morphological and electrical properties. From the X-ray diffraction (XRD) analysis, as-deposited films was found to be amorphous in nature and tend to transform into tetragonal anatase and rutile phase as the films annealed at 573 and 773 K, respectively. The diversification of the surface roughness was characterized by atomic force microscopy (AFM) indicated the roughness and thickness very dependent on the annealing temperature. The two-point probe electrical resistance and conductance of nanoparticles TiO2 thin films were determined by the DC current-voltage (IV) analysis. From the I-V measurement, the electrical conductance increased as the films annealed at higher temperature.

  14. Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

    PubMed

    Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

    2012-12-01

    Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications.

  15. Crystallization, metastable phases, and demixing in a hafnia-titania nanolaminate annealed at high temperature

    SciTech Connect

    Cisneros-Morales, Massiel Cristina; Rubin Aita, Carolyn

    2010-09-15

    Nanolaminate films with a nominal 5 nm HfO{sub 2}-4 nm TiO{sub 2} bilayer architecture are sputter deposited on unheated fused silica and Au-coated glass substrates. Films on fused silica are postdeposition annealed from 573 to 1273 K and characterized by x-ray diffraction, scanning electron microscopy, Raman microscopy, and UV-visible-near IR spectrophotometry. The films show weak but progressive crystallization into orthorhombic (o) HfTiO{sub 4} when annealed up to 973 K. o-HfTiO{sub 4} is expected to form under bulk thermodynamic equilibrium conditions in the case of complete mixing of the bilayer components. Annealing above 973 K produces a crystallization sequence that is not predicted by bulk thermodynamics, ultimately involving o-HfTiO{sub 4} demixing to form monoclinic HfO{sub 2} doped with Ti and rutile TiO{sub 2} doped with Hf. These phases have a higher atomic density than o-HfTiO{sub 4} and segregate into discrete mesoscopic features. The authors propose that o-HfTiO{sub 4} demixing into higher density phases is a mechanism for thermal stress relief at high temperature. Demixing results in a major loss of optical transparency in the visible and ultraviolet spectral regions.

  16. Production of Native Donors in ZnO by Annealing at High Temperature in Zn Vapor

    SciTech Connect

    Halliburton, L. E.; Giles, N. C.; Garces, N. Y.; Luo, Ming; Xu, Chunchuan; Bai, Lihai; Boatner, Lynn A

    2005-01-01

    Zinc oxide crystals grown by the seeded chemical vapor transport method have been annealed in zinc vapor at 1100 {sup o}C for 30 min. These thermochemical reduction treatments produce a deep red coloration in the crystals and increase their n-type electrical conductivity. Electron paramagnetic resonance (EPR), optical absorption, and Hall measurements were used to monitor changes in the crystals. After an anneal, an intense optical absorption band is present that extends from the band edge out to approximately 550 nm, and the EPR signal near g = 1.96 (due to shallow donors and/or conduction-band electrons), the free-carrier absorption, and the Hall electron concentration are all larger. Hydrogen was not present during these anneals, thus leaving oxygen vacancies and zinc interstitials as candidates for the added donors. Neutral oxygen vacancies are produced at high temperature by the additive-coloration mechanism, and are responsible for the broad near-edge absorption band. The observed increase in the number of free carriers is a result of either (1) the formation of zinc interstitials or (2) having the ground state of the neutral oxygen vacancy near the conduction band.

  17. Influence of annealing temperature on the structural, optical and electrical properties of amorphous Zinc Sulfide thin films

    NASA Astrophysics Data System (ADS)

    Göde, F.; Güneri, E.; Kariper, A.; Ulutaş, C.; Kirmizigül, F.; Gümüş, C.

    2011-11-01

    Zinc sulfide films have been deposited on glass substrates at room temperature by the chemical bath deposition technique. The growth mechanism is studied using X-ray diffraction, scanning electron microscopy, optical absorption spectra and electrical measurements. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (100, 200, 300 400 and 500 °C) for 1 h. The annealed film was also characterized by structural, optical and electrical studies. The structural analyses revealed that the as-deposited film was amorphous, but after being annealed at 500 °C, it changed to polycrystalline. The optical band gap is direct with a value of 4.01 eV, but this value decreased to 3.74 eV with annealing temperature, except for the 500 °C anneal where it only decreased to 3.82 eV. The refractive index (n), extinction coefficient (k), and real (ɛ1) and imaginary (ɛ2) parts of the dielectric constant are evaluated. Raman peaks appearing at ~478 cm-1, ~546 cm-1, ~778 cm-1 and ~1082 cm-1 for the annealed film (500 °C) were attributed to [TOl+LAΣ, 2TOΓ, 2LO, 3LO phonons of ZnS. The electrical conductivities of both as-deposited and annealed films have been calculated to be of the order of ~10-10 (Ω cm)-1 .

  18. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    NASA Technical Reports Server (NTRS)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  19. Extrinsic origin of room-temperature ferromagnetism in Co-doped ZnO annealed in Zn vapor

    NASA Astrophysics Data System (ADS)

    Yan, Guoqing; Xuan, Haicheng

    2011-08-01

    Co-doped ZnO and CoO were prepared at 950 °C by the solid-state reaction method, then were annealed in N2 flow at 950 °C, and finally annealed in Zn vapor at 600 °C or 800 °C. The samples before annealing in Zn vapor have no ferromagnetism, but after annealing in Zn vapor, Co-doped ZnO and CoO both exhibit room-temperature ferromagnetism. Through x-ray diffraction and element composition measurements, it was found that the ferromagnetism of Co-doped ZnO annealed in Zn vapor is extrinsic and comes from cubic Co5Zn21 and/or cubic CoZn.

  20. Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

    SciTech Connect

    Dai, Chong-Chong; Zhou, Tian-Yu; Liu, Xue-Chao Zhuo, Shi-Yi; Kong, Hai-Kuan; Yang, Jian-Hua; Shi, Er-Wei

    2014-04-15

    A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10{sup -5} Ω·cm{sup 2} was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni{sub 3}Si to Ni{sub 2}Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

  1. Structure and microhardness of Al-Si-Cu-Ni alloy after severe plastic deformation and high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Shvets, Karina; Khalikova, Gulnara; Korznikova, Elena; Trifonov, Vadim

    2015-10-01

    The effect of severe plastic deformation by high-pressure torsion (HPT) and subsequent annealing on the microstructure and microhardness of squeeze casting Al-22%Si-3%Cu-1.7%Ni alloy was investigated. HPT was performed at room temperature with 5 rotations under the pressure of 4 GPa. Annealing temperature range varied from 300 to 500°C for 5 min. HPT resulted in refinement and partial dissolution of the primary silicon and intermetallic particles in aluminum matrix and structure fragmentation that caused the microhardness increase. Subsequent annealing lead to the decomposition of the supersaturated solid solution that took place simultaneously with recovery and recrystallization of the fragmented structure. Increase of annealing temperature resulted in decrease of microhardness values.

  2. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  3. Energy based model for temperature dependent behavior of ferromagnetic materials

    NASA Astrophysics Data System (ADS)

    Sah, Sanjay; Atulasimha, Jayasimha

    2017-03-01

    An energy based model for temperature dependent anhysteretic magnetization curves of ferromagnetic materials is proposed and benchmarked against experimental data. This is based on the calculation of macroscopic magnetic properties by performing an energy weighted average over all possible orientations of the magnetization vector. Most prior approaches that employ this method are unable to independently account for the effect of both inhomogeneity and temperature in performing the averaging necessary to model experimental data. Here we propose a way to account for both effects simultaneously and benchmark the model against experimental data from 5 K to 300 K for two different materials in both annealed (fewer inhomogeneities) and deformed (more inhomogeneities) samples. This demonstrates that this framework is well suited to simulate temperature dependent experimental magnetic behavior.

  4. Temperature Dependence of Optical Phonon Lifetimes,

    DTIC Science & Technology

    This reprint reports an application of a picosecond laser system to the measurement of the temperature dependence of the relaxation time of LO...Raman linewidths, and to the theoretically predicted temperature dependence of the relaxation time. (Author).

  5. Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

    NASA Astrophysics Data System (ADS)

    Singh, Akhilesh Kumar; Hsu, Jen-Hwa; Perumal, Alagarsamy

    2016-11-01

    We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)]2/FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (TA=200, 300 and 400 °C). Structural analyzes reveal that the films annealed at TA≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at TA=300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M-H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), TA and temperature. A large reduction in coercivity (HC) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of HC(T), i.e., a broad minimum in HC(T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the HC(T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (TC) with TA (x). The multilayer films annealed at 200 °C exhibit low value of TC with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest TC with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and nature of interfaces.

  6. Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell

    PubMed Central

    Mahalingam, S.; Abdullah, H.; Shaari, S.; Muchtar, A.; Asshari, I.

    2015-01-01

    Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC. PMID:26146652

  7. Temperature Dependence of Laser Induced Breakdown

    DTIC Science & Technology

    1994-01-01

    consistent dependence on the temperature of the medium. The theory of the temperature dependence of LIB and experimental observations for all pulse...durations and their implications for retinal damage are discussed. Laser Induced Breakdown, Temperature dependence , Threshold valve, Nanosecond, Picosecond, Femtosecond, laser pulses.

  8. Damage annealing in low temperature Fe/Mn implanted ZnO

    NASA Astrophysics Data System (ADS)

    Gunnlaugsson, H. P.; Bharuth-Ram, K.; Johnston, K.; Langouche, G.; Mantovan, R.; Mølholt, T. E.; Naidoo, D.; Ólafsson, O.; Weyer, G.

    2015-04-01

    57Fe Emission Mössbauer spectra obtained after low fluence (<1012 cm -2) implantation of 57Mn ( T 1/2= 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe 2+ and Fe 3+ on Zn sites, interstitial Fe and Fe in damage regions (Fe D ). The Fe D component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (˜1015 cm -2)57Fe/ 57Co implanted ZnO and 57Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT.

  9. Damage formation and annealing at low temperatures in ion implanted ZnO

    SciTech Connect

    Lorenz, K.; Alves, E.; Wendler, E.; Bilani, O.; Wesch, W.; Hayes, M.

    2005-11-07

    N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range. The Rutherford backscattering technique in the channeling mode was used to study in situ the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase of the damage for low implantation fluences, an upper limit of the Zn displacement energy of 65 eV could be estimated for [0001] oriented ZnO. Annealing measurements below room temperature show a significant recovery of the lattice starting at temperatures between 80 and 130 K for a sample implanted with low Er fluence. Samples with higher damage levels do not reveal any damage recovery up to room temperature, pointing to the formation of stable defect complexes.

  10. Field emission behavior of carbon nanotube field emitters after high temperature thermal annealing

    SciTech Connect

    Sun, Yuning; Shin, Dong Hoon; Yun, Ki Nam; Leti, Guillaume; Hwang, Yeon Mo; Song, Yenan; Saito, Yahachi; Lee, Cheol Jin

    2014-07-15

    The carbon nanotube (CNT) field emitters have been fabricated by attaching a CNT film on a graphite rod using graphite adhesive material. The CNT field emitters showed much improved field emission properties due to increasing crystallinity and decreasing defects in CNTs after the high temperature thermal annealing at 900 °C in vacuum ambient. The CNT field emitters showed the low turn-on electric field of 1.15 V/μm, the low threshold electric field of 1.62 V/μm, and the high emission current of 5.9 mA which corresponds to a current density of 8.5 A/cm{sup 2}. In addition, the CNT field emitters indicated the enhanced field emission properties due to the multi-stage effect when the length of the graphite rod increases. The CNT field emitter showed good field emission stability after the high temperature thermal annealing. The CNT field emitter revealed a focused electron beam spot without any focusing electrodes and also showed good field emission repeatability.

  11. Thermoluminescence properties of natural zoisite mineral under γ-irradiations and high temperature annealing

    NASA Astrophysics Data System (ADS)

    Ccallata, H. Javier; Filho, L. Tomaz; Watanabe, S.

    2011-04-01

    Natural silicate mineral of zoisite, Ca 2Al 3(SiO 4)(Si 2O 7)O(OH), has been investigated concerning γ-radiation, UV-radiation and high temperature annealing effects on thermoluminescence (TL). X-ray diffraction (XRD) measurement confirmed zoisite structure and X-ray fluorescence (XRF) analysis revealed besides Si, Al and Ca that are the main crystal components, other oxides of Fe, Mg, Cr, Na, K, Sr, Ti, Ba and Mn which are present in more than 0.05 wt%. The TL glow curve of natural sample contains (130-150), (340-370) and (435-475) °C peaks. Their shapes indicated a possibility that they are result of composition of two or more peaks strongly superposed, a fact confirmed by deconvolution method. Once pre-annealed at 600 °C for 1 h, the shape of the glow curves change and the zoisite acquires high sensitivity. Several peaks between 100 and 400 °C appear superposed, and the high temperature peak around 435 °C cannot be seen. The ultraviolet radiation, on the other hand, produces one TL peak around 130 °C and the second one around 200 °C and no more.

  12. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure.

    PubMed

    Seshan, V; Ullien, D; Castellanos-Gomez, A; Sachdeva, S; Murthy, D H K; Savenije, T J; Ahmad, H A; Nunney, T S; Janssens, S D; Haenen, K; Nesládek, M; van der Zant, H S J; Sudhölter, E J R; de Smet, L C P M

    2013-06-21

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ~50 ml∕min (STP) at ~850 °C. The films were extensively evaluated by surface wettability, electron affinity, elemental composition, photoconductivity, and redox studies. In addition, electrografting experiments were performed. The surface characteristics as well as the optoelectronic and redox properties of the annealed films were found to be very similar to hydrogen plasma-treated films. Moreover, the presented method is compatible with atmospheric pressure and provides a low-cost solution to hydrogenate CVD diamond, which makes it interesting for industrial applications. The plausible mechanism for the hydrogen termination of CVD diamond films is based on the formation of surface carbon dangling bonds and carbon-carbon unsaturated bonds at the applied tempera-ture, which react with molecular hydrogen to produce a hydrogen-terminated surface.

  13. Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

    NASA Astrophysics Data System (ADS)

    Leppäniemi, J.; Ojanperä, K.; Kololuoma, T.; Huttunen, O.-H.; Dahl, J.; Tuominen, M.; Laukkanen, P.; Majumdar, H.; Alastalo, A.

    2014-09-01

    We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In2O3) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ˜1 cm2/(V.s). Amorphous In2O3 films annealed for 15 min with FUV at temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm2/(V.s) and 7.5 cm2/(V.s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.

  14. Effects of annealed temperature on the properties of TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Avesh

    2016-05-01

    In this work, the structural, morphological and electrical properties of TiO2 thin films are studied. The phase transformation of TiO2 from anatase to rutile is occurred at a certain temperature. This transformation increases defects concentration onthe surface of the film which acts as trapping sites for carriers, thereby affecting the Fermi level of TiO2 film.Quantitative estimation of Fermi level shifting is measured in terms of work function measurement using scanning Kelvin probe measurement. Work function of TiO2 was found to decrease with increasing annealed temperature indicating shifting of Fermi level towards conduction band. Position of Fermi level plays an important role in phase transformation and electronic properties of TiO2.

  15. 2D nano-Y2O3:Eu3+ photoluminescence with different preparation methods and annealing temperatures

    NASA Astrophysics Data System (ADS)

    Zhou, Jun; Zhu, Yanhua; Liu, Huangqing; Chai, Yifeng; Yang, Yibo; Zhang, Qingjun; Wang, Lingling

    2017-03-01

    Y2O3:Eu3+ (YOE) material is an important photoluminescence (PL) material. In this paper, YOE nano-powder was prepared by the low-temperature combustion method (LTC) and sol-gel method (SG), and annealed with different temperatures, respectively. The influence of the preparation methods and annealing temperature on the optical properties of YOE were well studied. The as-synthesized nano-YOE samples were characterized by x-ray diffraction (XRD), PL spectra, and Fourier transform infrared spectroscopy (FTIR). Results show that with the increase in annealing temperature, the charge transfer band (CTB) of samples blue-shifts and shows higher intensity. FTIR results indicate that low emission intensity decreases luminescence intensity and deteriorates the optical properties of nano-YOE. We also studied the spectral intensity changes before and after laser-induced, which shows the intensity of significant changes over time.

  16. Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates

    PubMed Central

    Chen, Tao-Hsing; Chen, Ting-You

    2015-01-01

    An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

  17. Effects of rolling temperature and subsequent annealing on mechanical properties of ultrafine-grained Cu–Zn–Si alloy

    SciTech Connect

    Zhang, Xiangkai; Yang, Xuyue; Chen, Wei; Qin, Jia; Fouse, Jiaping

    2015-08-15

    The effects of rolling temperature and subsequent annealing on mechanical properties of Cu–Zn–Si alloy were investigated by using X-ray diffraction, transmission electron microscope, electron back scattered diffraction and tensile tests. The Cu–Zn–Si alloy has been processed at cryogenic temperature (approximately 77 K) and room temperature up to different rolling strains. It has been identified that the cryorolled Cu–Zn–Si alloy samples show a higher strength compared with those room temperature rolled samples. The improved strength of cryorolled samples is resulted from grain size effect and higher densities of dislocations and deformation twins. And subsequent annealing, as a post-heat treatment, enhanced the ductility. An obvious increase in uniform elongation appears when the volume fraction of static recrystallization grains exceeds 25%. The strength–ductility combination of the annealed cryorolled samples is superior to that of annealed room temperature rolled samples, owing to the finer grains, high fractions of high angle grain boundaries and twins. - Highlights: • An increase in hardness of Cu–Zn–Si alloy is noticed during annealing process. • Thermal stability is reduced in Cu–Zn–Si alloy by cryorolling. • An obvious enhancement in UE is noticed when fraction of SRX grains exceeds 25%. • A superior strength–ductility combination is achieved in the cryorolling samples.

  18. The stress corrosion resistance and the cryogenic temperature mechanical properties of annealed Nitronic 60 bar material

    NASA Technical Reports Server (NTRS)

    Montano, J. W. L.

    1977-01-01

    Ambient and cryogenic temperature mechanical properties and the ambient temperature stress corrosion properties of annealed, straightened, and centerless ground Nitronic 60 stainless steel alloy bar material are presented. The mechanical properties of longitudinal specimens were evaluated at test temperatures from ambient to liquid hydrogen. The tensile test data indicated increasing strength with decreasing temperature to -196 C. Below liquid nitrogen temperature the smooth tensile and notched tensile strengths decreased slightly while the elongation and reduction of area decreased drastically. The Charpy V-notched impact energy decreased steadily with decreasing test temperature. Stress corrosion tests were performed on longitudinal tensile specimens and transverse C-ring specimens exposed to: alternate immersion in a 3.5% NaCl bath; humidity cabinet; and a 5% salt spray atmosphere. The longitudinal tensile specimens experienced no corrosive attack. Approximately 3/4 of the transverse C-rings exposed to alternate immersion and to salt spray experienced a pitting attack on the top and bottom ends. Additional stress corrosion tests were performed on transverse tensile specimens. No failures occurred in the 90% stressed specimens exposed for 90 days in the alternate immersion and salt spray environments

  19. Evolution of the interface structure of bonded Si wafers after high temperature annealing

    NASA Astrophysics Data System (ADS)

    Zakharov, N. D.; Pippel, E.; Werner, P.; Gösele, U.; Vdovin, V.; Milvidskii, M.; Ries, M.; Seacrist, M.; Falster, R.

    2010-02-01

    The evolution of the interfaces of bonded Si wafers and the corresponding low-angle twist boundary have been analysed in dependence on thermal annealing. Two orientation relations were investigated: i) Si(001)/SiO2/Si(001) and ii) Si(110)/SiO2/Si(001). The interfaces were analysed by TEM and STEM/EDX and EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si-Si bonded interface depend very much on the lattice mismatch and on the twist angle. A dissolution of the oxide and the formation of Si-Si boundaries occur much faster in the case of Si(110)/Si(001) bonding than in Si(001)/Si(001). The process of interface fusion and the dissolution of the oxide layer are discussed.

  20. The Viscosity-Temperature-Dependence of Liquids,

    DTIC Science & Technology

    The viscosity-temperature- dependence of liquids of different types can be represented by the formula lg kinematic viscosity = A/T to the x power + B...if A has a constant value, only one viscosity measurement at one temperature is necessary for the characterization of the viscosity-temperature- dependence . Examples for each different case are given. (Author)

  1. Effect of Annealing Temperature on Microstructure and Mechanical Properties of Hot Swaged cp-Ti Produced by Investment Casting

    NASA Astrophysics Data System (ADS)

    Ibrahim, Khaled M.; Mhaede, Mansour; Wagner, Lothar

    2012-01-01

    The purpose of this study is to evaluate the influence of hot swaging (SW) and annealing treatment on microstructure and mechanical properties of commercially pure titanium (grade 4) produced by investment casting. During SW at 700 °C, the diameter of the cast titanium bars was reduced from 25 to 8.5 mm in 14 steps. After SW, material was annealed for 1 h at 500, 700, or 870 °C. The as-cast samples showed a typical microstructure consisting of a variety of α-morphologies, while the hot swaged samples exhibited a kinked lamellar microstructure. Annealing at 500 °C did not significantly change this microstructure, while annealing at both 700 and 870 °C led to recrystallization and formation of equiaxed microstructures. The cast bars exhibited a typical hard α-layer in near-surface regions with maximum depth and maximum hardness of 720 μm and 660 HV0.5, respectively. Due to SW, the tensile strength of the as-cast material drastically increased from 605 to 895 MPa. Annealing at 500 °C decreased this tensile strength slightly from 895 to 865 MPa while annealing at 700 °C led to a further pronounced drop in tensile strength from 865 to 710 MPa. No additional decrease in tensile strength was observed by increasing the annealing temperature from 700 to 870 °C. The tensile ductility of the as-cast and hot swaged samples was approximately the same in the range of 0.05 to 0.11, while the annealed samples showed values in the range of 0.25 to 0.53. In addition, the as-cast and hot swaged samples revealed a brittle cleavage fracture surfaces. However, the annealed samples showed a transgranular ductile fracture with formation of dimples.

  2. High-temperature annealing effects on multiwalled carbon nanotubes: electronic structure, field emission and magnetic behaviors.

    PubMed

    Ray, Sekhar Chandra; Pao, Chih-Wen; Tsai, Huang-Ming; Chen, Huang-Chin; Chen, Yu-Shin; Wu, Shang-Lun; Ling, Dah-Chin; Lin, I-Nan; Pong, Way-Faung; Gupta, Sanju; Giorcelli, Mauro; Bianco, Stefano; Musso, Simone; Tagliaferro, Alberto

    2009-12-01

    This work elucidates the effects of high-temperature annealing on the microscopic and electronic structure of multiwalled carbon nanotubes (MWCNTs) using high-resolution transmission electron microscopy, micro-Raman spectroscopy, X-ray diffraction, X-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VBPES), respectively. The field emission and magnetization behaviors are also presented. The results of annealing are as follows: (1) MWCNTs tend to align in the form of small fringes along their length, promote graphitization and be stable in air, (2) XANES indicates an enhancement in oxygen content on the sample, implying that it can be adopted for sensing and storing oxygen gas, (3) the electron field emission current density (J) is enhanced and the turn-on electric field (E(TOE)) reduced, suggesting potential use in field emission displays and as electron sources in microwave tube amplifiers and (4) as-grown MWCNTs with embedded iron nanoparticles exhibits significantly higher coercivity approximately 750 Oe than its bulk counterpart (Fe(bulk) approximately 0.9 Oe), suggesting its potential use as low-dimensional high-density magnetic recording media.

  3. Effect of annealing temperature on gelatinization of rice starch suspension as studied by rheological and thermal measurements.

    PubMed

    Tsutsui, Kazumi; Katsuta, Keiko; Matoba, Teruyoshi; Takemasa, Makoto; Nishinari, Katsuyoshi

    2005-11-16

    The effect of annealing temperature (Ta) on the rheological behavior of 10 wt % rice starch suspension was investigated by the dynamic viscoelasticity, the differential scanning calorimetry (DSC), and the amount of leached out amylose and the swelling ratio of starch suspension. The rheological behaviors of the annealed samples are classified into three types in terms of Ta: Ta1, 48 and 55 degrees C, which are much lower than the gelatinization temperature, Tgel (=62 degrees C); Ta2, 58, 60, and 62 degrees C, which are almost the same as Tgel; and Ta3, 65, 68, 70, and 73 degrees C, which are much higher than Tgel. For the samples annealed at Ta2, the onset temperature of the storage and the loss moduli, G' and G'', increased with increasing T(a), and G' and G" in the temperature range from 65 to 90 degrees C gradually increased though smaller than those for the nonannealed sample, the control. This can be understood by the partial gelatinization; i.e., the leached out amylose prevents further amylose from leaching out. The rheological property of the samples annealed at Ta1 is not so different from that of the control, and the samples annealed at Ta3 are almost gelatinized. The rheological behavior of starch suspension can be controlled by Ta.

  4. Microstructure evolution of a ZrC coating layer in TRISO particles during high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Kim, Daejong; Chun, Young Bum; Ko, Myeong Jin; Lee, Hyeon-Geun; Cho, Moon-Sung; Park, Ji Yeon; Kim, Weon-Ju

    2016-10-01

    The influence of high-temperature annealing on the microstructure of zirconium carbide (ZrC) was investigated in relation to its application as a coating layer of a nuclear fuel in a very high temperature gas cooled reactor. ZrC was deposited as a constituent coating layer of TRISO coated particles by a fluidized bed chemical vapor deposition method using a ZrCl4-CH4-Ar-H2 system. The grain growth of ZrC during high-temperature annealing was strongly influenced by the co-deposition of free carbon. Sub-stoichiometric ZrC coatings have experienced a significant grain growth during high-temperature annealing at 1800 °C and 1900 °C for 1 h. On the other hand, a dual phase of stoichiometric ZrC and free carbon experienced little grain growth. It was revealed that the free carbon of the as-deposited ZrC was primarily distributed within the ZrC grains but was redistributed to the grain boundaries after annealing. Consequently, carbon at the grain boundary retarded the grain growth of ZrC. Electron backscatter diffraction (EBSD) results showed that as-deposited ZrC had (001) a preferred orientation that kept its favored direction after significant grain growth during annealing. The hardness slightly decreased as the grain growth progressed.

  5. High-temperature measurement with Brillouin optical time domain analysis of an annealed fused-silica single-mode fiber.

    PubMed

    Bao, Yi; Chen, Genda

    2016-07-15

    The effect of annealing is experimentally studied for a fused silica, fully distributed fiber optic sensor based on the pulse pre-pump Brillouin optical time domain analysis (PPP-BOTDA). Within a heating rate of 4.3°C/min and 30.6°C/min, and a sustained peak temperature for 120 and 240 min, annealing extended the sensor's upper operation temperature from 800°C to 1000°C and reduced the sensor's measurement variability over a temperature range of 22°C to 1000°C with a maximum Brillouin frequency variation of 1%. The annealed sensor had a linearly decreasing Brillouin frequency sensitivity from 1.349×10-3  GHz/°C at 22°C to 0.419×10-3  GHz/°C at 1000°C. The time required to achieve a stable annealing effect decayed exponentially with annealing temperature.

  6. Bladder and prostate cancer screening for human papillomavirus by polymerase chain reaction: conflicting results using different annealing temperatures.

    PubMed

    Sinclair, A L; Nouri, A M; Oliver, R T; Sexton, C; Dalgleish, A G

    1993-12-01

    Two sets of L1 ORF degenerative primers, GP5/6 and MYO9/11, have been used to screen for human papillomavirus (HPV) sequences in bladder tumours, cell lines and controls by polymerase chain reaction (PCR). None of the 14 bladder and prostate tumours or nine bladder cell lines contained HPV sequences when tested with L1 ORF primer pair GP5/6 at 40 degrees C annealing temperature. In contrast, use of the L1 ORF primer pair MY09/11 at this low annealing temperature consistently gave a 450 bp band, suggesting the presence of HPV. This occurred in all samples including the negative DNA controls. An increase in stringency to an annealing temperature of 55 degrees C resulted in an elimination of this band in the test and negative control samples. This finding may explain why there are contradictory reports in the literature, and further studies are in progress to clarify this issue.

  7. Temperature Dependence of Large Polaron Superconductivity.

    DTIC Science & Technology

    1995-07-18

    to explain the variation of critical temperature Tc with chemical composition and the temperature dependence of high-Tc superconductor properties is...One result of this refinement is a clearer picture of the dependence of electron hopping activation energy on crystal-field parameters. A... dependence is more typically exponential. With these improvements, precise fits to penetration depth versus temperature measurements for high-purity YBCO

  8. Change in the magnetic properties of nanoferrihydrite with an increase in the volume of nanoparticles during low-temperature annealing

    NASA Astrophysics Data System (ADS)

    Balaev, D. A.; Krasikov, A. A.; Stolyar, S. V.; Iskhakov, R. S.; Ladygina, V. P.; Yaroslavtsev, R. N.; Bayukov, O. A.; Vorotynov, A. M.; Volochaev, M. N.; Dubrovskiy, A. A.

    2016-09-01

    The results of the investigation into the effect of low-temperature annealing of a powder of nanoparticles of bacterial ferrihydrite on its magnetic properties have been presented. It has been found that an increase in the time (up to 240 h) and temperature (in the range from 150 to 200°C) of annealing leads to a monotonic increase in the superparamagnetic blocking temperature, the coercive force, and the threshold field of the opening of the magnetic hysteresis loop (at liquid-helium temperatures), as well as to an increase in the magnetic resonance line width at low temperatures and in the magnetic susceptibility at room temperature. At the same time, according to the results of the analysis of the Mössbauer spectra, the annealing of ferrihydrite does not lead to the formation of new iron oxide phases. Most of these features are well consistent with the fact that the low-temperature annealing of ferrihydrite causes an increase in the size of nanoparticles, which is confirmed by the results of transmission electron microscopy studies.

  9. Sintering Characteristics of Multilayered Thermal Barrier Coatings Under Thermal Gradient and Isothermal High Temperature Annealing Conditions

    NASA Technical Reports Server (NTRS)

    Rai, Amarendra K.; Schmitt, Michael P.; Bhattacharya, Rabi; Zhu, Dongming; Wolfe, Douglas E.

    2014-01-01

    Pyrochlore oxides have most of the relevant attributes for use as next generation thermal barrier coatings such as phase stability, low sintering kinetics and low thermal conductivity. One of the issues with the pyrochlore oxides is their lower toughness and therefore higher erosion rate compared to the current state-of-the-art TBC material, yttria (6 to 8 wt%) stabilized zirconia (YSZ). In this work, sintering characteristics were investigated for novel multilayered coating consisted of alternating layers of pyrochlore oxide viz Gd2Zr2O7 and t' low k (rare earth oxide doped YSZ). Thermal gradient and isothermal high temperature (1316 C) annealing conditions were used to investigate sintering and cracking in these coatings. The results are then compared with that of relevant monolayered coatings and a baseline YSZ coating.

  10. films crystallized on glass and platinized substrates by laser-assisted annealing at room temperature

    NASA Astrophysics Data System (ADS)

    Silva, J. P. B.; Khodorov, A.; Almeida, A.; Agostinho Moreira, J.; Pereira, M.; Gomes, M. J. M.

    2014-09-01

    In this work, Ba0.8Sr0.2TiO3 (BST) films were grown by pulse laser ablation on bare glass and platinized substrates. The crystalline phase was obtained with the help of laser-assisted annealing (LAA) at room temperature, in air environment. By adjusting LAA conditions, like frequency of the laser and number of shots, we were able to grow crack-free BST thin films with pure perovskite phase on bare glass and platinized substrates. The crystalline layer was found to be the same irrespective of the substrate used, c.a. 250 nm thick. The electric characteristics of the amorphous and LAA crystalline BST films deposited on platinized substrate were further studied and analyzed. While in amorphous films it was found that the oxygen defects are responsible for conduction, in LAA films the amorphous/crystalline interface layer plays an important role in current leakage.

  11. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  12. Wide Temperature Core Loss Characteristics of Transverse Magnetically Annealed Amorphous Tapes for High Frequency Aerospace Magnetics

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.; Schwarze, Gene E.

    1999-01-01

    100 kHz core loss properties of sample transverse magnetically annealed, cobalt-based amorphous and iron-based nanocrystalline tape wound magnetic cores are presented over the temperature range of -150 C to 150 C, at selected values of B(sub peak). For B-fields not close to saturation, the core loss is not sensitive to temperature in this range and is as low as seen in the best MnZn power ferrites at their optimum temperatures. Frequency resolved characteristics are given over the range of 50 kHz to 1 MHz, but at B(sub peak) = 0.1 T and 50 C only. For example, the 100 kHz specific core loss ranged from 50 - 70 mW/cubic cm for the 3 materials, when measured at 0.1 T and 50 C. This very low high frequency core loss, together with near zero saturation magnetostriction and insensitivity to rough handling, makes these amorphous ribbons strong candidates for power magnetics applications in wide temperature aerospace environments.

  13. Thermal decay analysis of fiber Bragg gratings at different temperature annealing rates using demarcation energy approximation

    NASA Astrophysics Data System (ADS)

    Gunawardena, Dinusha Serandi; Lai, Man-Hong; Lim, Kok-Sing; Ahmad, Harith

    2017-03-01

    In this study the thermal degradation of gratings inscribed in three types of fiber namely, PS 1250/1500, SM 1500 and zero water peak single mode fiber is demonstrated. A comparative investigation is carried out on the aging characteristics of the gratings at three different temperature ramping rates of 3 °C/min, 6 °C/min and 9 °C/min. During the thermal annealing treatment, a significant enhancement in the grating reflectivity is observed for PS 1250/1500 fiber from ∼1.2 eV until 1.4 eV which indicates a thermal induced reversible effect. Higher temperature ramping rates lead to a higher regeneration temperature. In addition, the investigation also reflects that regardless of the temperature ramping rate the thermal decay behavior of a specific fiber can be successfully characterized when represented in a demarcation energy domain. Moreover, this technique can be accommodated when predicting the thermal decay characteristics of a specific fiber.

  14. Influence of annealing temperature on Pb(Zr,Ti)O3 nanoparticles growth on multi-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Jeon, Do Hyun; Han, Jin Kyu; Bu, Sang Don

    2015-01-01

    We report the influence of annealing temperature on Pb(Zr,Ti)O3 nanoparticles (PZT NPs) grown on multi-walled carbon nanotubes (MWCNTs). The nanocomposites consist of PZT NPs and MWCNTs that were successfully prepared by using a sol-gel process, followed by an injection using a syringe filter and then by rapid thermal annealing. Field-emission transmission electron microscopy (FETEM) indicated that as the annealing temperature was increased, the shape and the crystallinity of the PZT NPs on the MWCNTs changed from an amorphous structure to the perovskite phase of PZT. Raman spectroscopy showed that the ratio of the intensity of G band to that of the D band, which indicates the crystal purity of the MWCNTs, decreased from 0.57 to 0.55 when the annealing temperature was increased from 500 to 700 °C. A separate distribution of elemental C in the PZT NPs on the MWCNTs annealed at 600 °C was directly observed via energy dispersive X-ray spectroscopy.

  15. Temperature dependence of nucleation in Yukawa fluids

    NASA Astrophysics Data System (ADS)

    Li, J.-S.; Wilemski, G.

    2002-03-01

    We have studied the temperature dependence of gas-liquid nucleation in Yukawa fluids with gradient theory (GT) and density functional theory (DFT). Each of these nonclassical theories exhibits a weaker (i.e. better) temperature dependence than classical nucleation theory. At a given temperature, the difference between GT and DFT for the reversible work to form a critical nucleus gets smaller with increasing superaturation. For the temperature dependence, the reversible work for GT is very close to that for DFT at high temperatures. The difference between the two theories increases with decreasing temperature and supersaturation. Thus, in contrast to the behavior of a Peng-Robinson fluid, we find that GT can improve the temperature dependence over that of classical nucleation theory, although not always to the same degree as DFT.

  16. Growth of intermetallic phases in Al/Cu composites at various annealing temperatures during the ARB process

    NASA Astrophysics Data System (ADS)

    Hsieh, Chih-Chun; Shi, Ming-Shou; Wu, Weite

    2012-02-01

    The purpose of this study is to discuss the effect of annealing temperatures on growth of intermetallic phases in Al/Cu composites during the accumulative roll bonding (ARB) process. Pure Al (AA1100) and pure Cu (C11000) were stacked into layered structures at 8 cycles as annealed at 300 °C and 400 °C using the ARB technique. Microstructural results indicate that the necking of layered structures occur after 300 °C annealing. Intermetallic phases grow and form a smashed morphology of Al and Cu when annealed at 400 °C. From the XRD and EDS analysis results, the intermetallic phases of Al2Cu (θ) and Al4Cu9 (γ2) formed over 6 cycles and the AlCu (η2) precipitated at 8 cycles after 300 °C annealing. Three phases (Al2Cu (θ), Al4Cu9 (γ2), and AlCu (η2)) were formed over 2 cycles after 400 °C annealing.

  17. Influences of annealing temperature on microstructure and properties for TiO2 films deposited by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shang, Jie-Ting; Chen, Chih-Ming; Cheng, Ta-Chih; Lee, Ying-Chieh

    2015-12-01

    Titanium dioxide films were deposited at 100 °C of substrate temperature with a DC magnetron sputtering system. The crystalline structures, morphological features, and photocatalytic activity of the TiO2 films were systematically studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and ultraviolet spectrophotometry. To obtain the crystalline structure of TiO2 film at a low annealing temperature, high-level DC power (600 W) was applied. The effect of the annealing treatments on the microstructure of the TiO2 films was investigated. The results indicated that the annealing process at 200 °C clearly caused the formation of a nanocrystalline anatase phase that directly affected photocatalytic activity. The dye removal efficiency of the nanostructured anatase attained 53 and 31% for UV and visible light radiation, respectively.

  18. Wide Temperature Characteristics of Transverse Magnetically Annealed Amorphous Tapes for High Frequency Aerospace Magnetics

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.

    1999-01-01

    100 kHz core loss and magnetization properties of sample transverse magnetically annealed, cobalt-based amorphous and iron-based nanocrystalline tape wound magnetic cores are presented over the temperature range of -150 to 150 C, at selected values of B(sub peak). For B-fields not close to saturation, the core loss is not sensitive to temperature in this range and is as low as seen in the best MnZn power ferrites at their optimum temperatures. Frequency resolved characteristics are given over the range of 50 kHz to 1 MHz, at B(sub peak) = 0.1 T and 50 C only. A linear permeability model is used to interpret and present the magnetization characteristics and several figures of merit applicable to inductor materials arc reviewed. This linear modeling shows that, due to their high permeabilities, these cores must he gapped in order to make up high Q or high current inductors. However, they should serve well, as is, for high frequency, anti ratcheting transformer applications.

  19. Temperature dependence of the electrical properties of hydrogen titanate nanotubes

    SciTech Connect

    Alves, Diego C. B.; Brandão, Frederico D.; Krambrock, Klaus; Ferlauto, Andre S.; Fonseca, Fabio C.

    2014-11-14

    The temperature dependence of the electrical properties of hydrogen-rich titanate nanotubes (H-TNTs) in the 90–270 °C range was investigated by impedance spectroscopy. Three types of dominant conduction were found which depend on the previous thermal treatment of the samples. For untreated samples, at low temperatures (T < 100 °C), electrical conductivity is relatively high (>10{sup −4} S/cm at T ≈ 90 °C) and is dominated by protonic transport within structural water molecules. For thermal annealing in inert atmosphere up to 150 °C, water molecules are released from the nanotube structure resulting in a dehydrated H{sub 2}Ti{sub 3}O{sub 7} phase. Such phase has a low, thermally-dependent, electrical conductivity (10{sup −8} S/cm at T ≈ 90 °C) with activation energy of 0.68 eV. For samples annealed up to 260 °C, loss of OH groups, and consequent generation of oxygen vacancies, occurs that result in the non-stoichiometric H{sub 2(1−z)}Ti{sub 3}O{sub 7−z} phase. This phase has much higher conductivity (10{sup −5} S/cm at T ≈ 90 °C) and lower associated activation energy (0.40 eV). The generation of oxygen vacancies is confirmed by electron paramagnetic resonance measurements at room temperature, which revealed the presence of single-electron-trapped oxygen vacancies. The activation energy value found is consistent with the thermal ionization energy of the oxygen vacancies. Such defect formation represents the initial stage of the phase transformation from titanate to TiO{sub 2} (B). X-ray diffraction and Raman spectroscopy measurements also support such interpretation.

  20. 454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature.

    PubMed

    Gonzalez-Martinez, Alejandro; Rodriguez-Sanchez, Alejandro; Rodelas, Belén; Abbas, Ben A; Martinez-Toledo, Maria Victoria; van Loosdrecht, Mark C M; Osorio, F; Gonzalez-Lopez, Jesus

    2015-01-01

    Identification of anaerobic ammonium oxidizing (anammox) bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing) of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON) and three full-scale bioreactors (anammox, CANON, and DEMON), was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature). The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C) and hence a range of annealing temperatures of 44-49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed.

  1. Elevated temperature annealing behaviors of bulk resistivity and space charge density (Neff) of neutron irradiated silicon detectors and materials

    NASA Astrophysics Data System (ADS)

    Z., Li

    1996-02-01

    The bulk resistivity of neutron irradiated detector grade silicon material has been measured under the condition of no or low electrical filed (electrical neutral bulk or ENB condition) after elevated temperature (T = 110°C) anneals (ETA). The ENB resistivity (ρ) for as-irradiated silicon material increases with neutron fluence at low fluences (Φn > 1013 n/cm2). The saturation of the ENB resistivity near the intrinsic value can be explained by the near perfect compensation of all neutron induced deep donors and acceptors in the ENB. After ETA, it has been observed that ρ increases with annealing time for silicon materials irradiated below the saturation and decreases with annealing time for those irradiated after saturation. For those irradiated near the saturation point, ρ increases with annealing time initially and decreases thereafter. This ETA behavior of ρ may be explained by the increase of net acceptor-like deep levels in silicon during the anneal, qualitatively consistent with the observed reverse annealing effect of the space charge density (Neff) in silicon detectors which is an increase of negative space charge density (acceptors) after long term room temperature (RTA) anneal and/or ETA. However, the amount of the increase of net hole concentration (p) of about 5 × 1011 cm-3, corresponding to 20 hours of ETA at 110°C for a fluence of 1.5 × 1014 n/cm2, is still much less than the corresponding increase of Neff of about 1.5 × 1013 cm-3. This suggests that while the ETA restores some of the free carrier concentration (namely holes), there is still a large degree of compensation. The space charge density is still dominated by the deep levels and Neff ≠ p.

  2. Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.

    2008-01-01

    BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

  3. Catalyst-free growth of ZnO nanowires on ITO seed layer/glass by thermal evaporation method: Effects of ITO seed layer laser annealing temperature

    NASA Astrophysics Data System (ADS)

    Alsultany, Forat H.; Hassan, Z.; Ahmed, Naser M.

    2016-04-01

    Novel catalyst-free growth of ZnO nanowires (ZnO-NWs) on ITO seeds/glass substrate by thermal evaporation method, and effects of continuous wave CO2 laser thermal annealed seed layer on the morphology and properties of ZnO-NWs growth were investigated. The effects of sputtered ITO seed layer laser annealing temperature on the morphological, structural, and optical properties of ZnO-NWs was systematically investigated at temperatures 250, 350, and 450 °C, respectively. The surface morphology and structure of the seeds and the products of ZnO-NWs were characterized in detail by using field emission scanning electron microscopy, atomic force microscopy, and X-ray diffraction. Optical properties were further examined through photoluminescence, and UV-Vis spectrophotometer. A growth mechanism was proposed on the basis of obtained results. The results showed that the nanowires were strongly dependent on the seed layer annealing temperatures, which played an important role in nucleation and dissimilar growth of the nanowires with varying sizes and geometric shapes.

  4. Enhanced Optical Properties of Chemical Vapor Deposited Single Crystal Diamond by Low-Pressure/High-Temperature Annealing

    SciTech Connect

    Meng, Y.; Yan, C; Lai, Y; Krasnicki, S; Shu, H; Yu, T; Liang, Q; Mao, H; Hemley, R

    2008-01-01

    Single crystal diamond produced by chemical vapor deposition (CVD) at very high growth rates (up to 150 em/h) has been successfully annealed without graphitization at temperatures up to 2200 C and pressures <300 torr. Crystals were annealed in a hydrogen environment by using microwave plasma techniques for periods of time ranging from a fraction of minute to a few hours. This low-pressure/high-temperature (LPHT) annealing enhances the optical properties of this high-growth rate CVD single crystal diamond. Significant decreases are observed in UV, visible, and infrared absorption and photoluminescence spectra. The decrease in optical absorption after the LPHT annealing arises from the changes in defect structure associated with hydrogen incorporation during CVD growth. There is a decrease in sharp line spectral features indicating a reduction in nitrogen-vacancy-hydrogen (NVH-) defects. These measurements indicate an increase in relative concentration of nitrogen-vacancy (NV) centers in nitrogen-containing LPHT-annealed diamond as compared with as-grown CVD material. The large overall changes in optical properties and the specific types of alterations in defect structure induced by this facile LPHT processing of high-growth rate single-crystal CVD diamond will be useful in the creation of diamond for a variety of scientific and technological applications.

  5. Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing.

    PubMed

    Meng, Yu-fei; Yan, Chih-shiue; Lai, Joseph; Krasnicki, Szczesny; Shu, Haiyun; Yu, Thomas; Liang, Qi; Mao, Ho-kwang; Hemley, Russell J

    2008-11-18

    Single crystal diamond produced by chemical vapor deposition (CVD) at very high growth rates (up to 150 microm/h) has been successfully annealed without graphitization at temperatures up to 2200 degrees C and pressures <300 torr. Crystals were annealed in a hydrogen environment by using microwave plasma techniques for periods of time ranging from a fraction of minute to a few hours. This low-pressure/high-temperature (LPHT) annealing enhances the optical properties of this high-growth rate CVD single crystal diamond. Significant decreases are observed in UV, visible, and infrared absorption and photoluminescence spectra. The decrease in optical absorption after the LPHT annealing arises from the changes in defect structure associated with hydrogen incorporation during CVD growth. There is a decrease in sharp line spectral features indicating a reduction in nitrogen-vacancy-hydrogen (NVH(-)) defects. These measurements indicate an increase in relative concentration of nitrogen-vacancy (NV) centers in nitrogen-containing LPHT-annealed diamond as compared with as-grown CVD material. The large overall changes in optical properties and the specific types of alterations in defect structure induced by this facile LPHT processing of high-growth rate single-crystal CVD diamond will be useful in the creation of diamond for a variety of scientific and technological applications.

  6. Temperature-dependent susceptibility in ALON

    NASA Astrophysics Data System (ADS)

    West, Bruce J.

    2001-02-01

    Herein, we propose a stochastic model of the complex susceptibility in aluminum nitride (ALON), a polycrystalline transparent ceramic. The proposed model yields an inverse power-law dependence of the dielectric loss tangent on frequency, in remarkably close agreement with data. In addition, the phenomenological parameters are found to be strongly temperature-dependent. This temperature dependence is determined, in the theoretical model, to be a consequence of the thermodynamic properties of the molecular dipoles in the material.

  7. Temperature dependent tuning of the flat band voltages of TiO2/Si interfaces

    NASA Astrophysics Data System (ADS)

    Nasim, F.; Ali, A.; Bhatti, A. S.; Naseem, S.

    2011-12-01

    In this work, we present study of charge accumulation at the TiO2/Si interfaces and its variation in the TiO2 thin films sputter-deposited on n-Si, p-Si, and B-implanted Si substrates at various growth temperatures. TiO2 films, deposited in an oxygen deficient environment, showed significant growth of rutile phase and absence of anatase phase in the as-grown films. Annealing in air resulted in emergence of anatase phase, thus improving the ratio of anatase to rutile phase in TiO2 films. The flatband voltages determined from capacitance-voltage measurements were observed to be high in the rutile phase TiO2 and dropped considerably on annealing, due to formation of the anatase phase. The drop in the flatband voltages on annealing was also observed to depend strongly on the initial growth temperature. Films grown at high temperatures showed relatively low flatband voltages as compared to the films grown at room temperature. It is demonstrated that VFB strongly depends on the interface traps, and oxide-related defects were two orders of magnitude smaller than interface traps. The amount of depletion of the interface charge was found to depend on annealing. In the end, we also demonstrate that interface traps and oxide defects are not the only factors affecting the band bending, but the underlying substrate also plays an important role.

  8. Influence of annealing temperature on electronic and dielectric properties of ZrO2 thin films on Si

    NASA Astrophysics Data System (ADS)

    Uthanna, S.; Kondaiah, P.; Madhavi, V.; Rao, G. Mohan

    2012-06-01

    Zirconium oxide (ZrO2) films were deposited on (100) silicon substrates by DC reactive magnetron sputtering of zirconium target at an oxygen partial pressure of 6 × 10-2 Pa. The as-deposited films were annealed in air for 1 hour at different temperatures in the range 773 - 1173 K. The influence of annealing temperature on the structural properties of ZrO2 films and the electrical properties like Capacitance-Voltage and Current-Voltage of the capacitors of the type Al/ZrO2/p-Si were studied. The capacitance and dielectric constant of the capacitors were found to increase with increase in annealing temperature from 773 to 973 K, however, with further increase in annealing temperature to 1173 K they were found to decrease. In addition, the leakage current density was decreased from 1 × 10-6 to 4 × 10-7 A/cm2 at 1V gate bias voltage and the electrical conduction mechanism was dominated by Schottky emission for all the films in lower electric fields.

  9. Influence of annealing temperature on electronic and dielectric properties of ZrO{sub 2} thin films on Si

    SciTech Connect

    Uthanna, S.; Kondaiah, P.; Madhavi, V.; Rao, G. Mohan

    2012-06-25

    Zirconium oxide (ZrO{sub 2}) films were deposited on (100) silicon substrates by DC reactive magnetron sputtering of zirconium target at an oxygen partial pressure of 6 Multiplication-Sign 10{sup -2} Pa. The as-deposited films were annealed in air for 1 hour at different temperatures in the range 773 - 1173 K. The influence of annealing temperature on the structural properties of ZrO{sub 2} films and the electrical properties like Capacitance-Voltage and Current-Voltage of the capacitors of the type Al/ZrO{sub 2}/p-Si were studied. The capacitance and dielectric constant of the capacitors were found to increase with increase in annealing temperature from 773 to 973 K, however, with further increase in annealing temperature to 1173 K they were found to decrease. In addition, the leakage current density was decreased from 1 Multiplication-Sign 10{sup -6} to 4 Multiplication-Sign 10{sup -7} A/cm{sup 2} at 1V gate bias voltage and the electrical conduction mechanism was dominated by Schottky emission for all the films in lower electric fields.

  10. Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

    SciTech Connect

    Leppäniemi, J. Ojanperä, K.; Kololuoma, T.; Huttunen, O.-H.; Majumdar, H.; Alastalo, A.; Dahl, J.; Tuominen, M.; Laukkanen, P.

    2014-09-15

    We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In{sub 2}O{sub 3}) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ∼1 cm{sup 2}/(V·s). Amorphous In{sub 2}O{sub 3} films annealed for 15 min with FUV at temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm{sup 2}/(V·s) and 7.5 cm{sup 2}/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.

  11. Effect of annealing temperatures on the secondary re-crystallization of extruded PM2000 steel bar.

    PubMed

    Chen, C-L; Tatlock, G J; Jones, A R

    2009-03-01

    The ferritic oxide dispersion-strengthened alloy PM2000 is an ideal candidate for high-temperature applications as it contains uniform nano-oxide dispersoids, which act as pinning points to obstruct dislocation and grain boundary motion and therefore impart excellent creep resistance. The development of the microstructure during re-crystallization of oxide dispersion-strengthened alloys has been discussed by a number of authors, but the precise mechanism of secondary re-crystallization still remains uncertain. Hence, this work is aimed at investigating the re-crystallization behaviour of extruded PM2000 bar for different annealing temperatures, using electron backscatter diffraction, in particular, to determine grain orientations, grain boundary misorientation angles, etc. The results show that the as-extruded bar microstructure comprises both low-angle grain boundaries pinned by oxide particles and high-angle boundaries that will have inherent boundary mobility to allow boundary migration. In addition, dynamical re-crystallization was found in the outer region of the non-heat-treated PM2000 bar, which suggested that deformation heterogeneities can be introduced during thermo-mechanical processing that enhance the nucleation of re-crystallization. Subsequent heat treatments promote and stimulate secondary re-crystallization, giving rise to large grains with few sub-grain boundaries.

  12. Microstructural changes to AlCu6Ni1 alloy after prolonged annealing at elevated temperature.

    PubMed

    Wierzbińska, M; Sieniawski, J

    2010-03-01

    This work presents results of microstructure examination of AlCu(6)Ni(1) aluminium alloy. The commercial AlCu(4)Ni(2)Mg(2) (M-309) alloy is widely used for elements of aircraft and automotive engines. Modification its chemical composition was aimed at improving the stability of mechanical properties of the alloy subjected to long-term exposure to high temperature. The alloy after standard T6 heat treatment (solution heat treated at 818 K/10 h/water quenched followed by ageing at 498 K/8 h/air cooled) was annealed for 150 h at elevated temperature of 573 K corresponding to the maximum value at which structural elements of jet piston engines made of aluminium alloys operate. It was found that applied heat treatment caused an increasing in the particles of hardening phase (theta'-Al(2)Cu) size. The significant growth of the length of theta'-Al(2)Cu precipitations was observed in particularly. Nevertheless, it did not strongly result in change of its shape - the 'crystallites' and 'rods' were still characteristic of hardening phase morphology. The phenomena of the growth of theta'-Al(2)Cu precipitates caused decreasing the mechanical properties of the alloy, what is the subject of further investigations by the authors.

  13. Effect of Water Vapor, Temperature, and Rapid Annealing on Formamidinium Lead Triiodide Perovskite Crystallization

    SciTech Connect

    Aguiar, Jeffery A.; Wozny, Sarah; Alkurd, Nooraldeen R.; Yang, Mengjin; Kovarik, Libor; Holesinger, Terry G.; Al-Jassim, Mowafak; Zhu, Kai; Zhou, Weilie; Berry, Joseph J.

    2016-07-08

    Perovskite-based solar cells are one of the emerging candidates for radically lower cost photovoltaics. Herein, we report on the synthesis and crystallization of organic-inorganic formamidinium lead triiodide perovskite films under controlled atmospheric and environmental conditions. Using in situ (scanning) transmission electron microscopy, we make observations of the crystallization process of these materials in nitrogen and oxygen gas with and without the presence of water vapor. Complementary planar samples were also fabricated in the presence of water vapor and characterized by in situ X-ray diffraction. Direct observations of the material structure and final morphology indicate that the exposure to water vapor results in a porous film that is metastable, regardless of the presence of argon, nitrogen, or oxygen. However, the optimal crystallization temperature of 175 °C is unperturbed across conditions. Rapid modulation about the annealing temperature of 175 °C in ±25 °C steps (150-200 °C) promotes crystallization and significantly improves the film morphology by overcoming the presence of impregnated water trapped in the material. Following this processing protocol, we demonstrate substantial growth to micron-size grains via observation inside of an environmentally controlled transmission electron microscope. Adapting this insight from our in situ microscopy, we are able to provide an informed materials protocol to control the structure and morphology of these organic-inorganic semiconductors, which is readily applicable to benchtop device growth strategies.

  14. Effect of Water Vapor, Temperature, and Rapid Annealing on Formamidinium Lead Triiodide Perovskite Crystallization

    SciTech Connect

    Aguiar, Jeffery A.; Wozny, Sarah; Alkurd, Nooraldeen R.; Yang, Mengjin; Kovarik, Libor; Holesinger, Terry G.; Al-Jassim, Mowafak; Zhu, Kai; Zhou, Weilie; Berry, Joseph J.

    2016-07-08

    Perovskite-based solar cells are one of the emerging candidates for radically lower cost photovoltaics. Herein, we report on the synthesis and crystallization of organic-inorganic formamidinium lead triiodide perovskite films under controlled atmospheric and environmental conditions. Using in situ (scanning) transmission electron microscopy, we make observations of the crystallization process of these materials in nitrogen and oxygen gas with and without the presence of water vapor. Complementary planar samples were also fabricated in the presence of water vapor and characterized by in situ X-ray diffraction. Direct observations of the material structure and final morphology indicate that the exposure to water vapor results in a porous film that is metastable, regardless of the presence of argon, nitrogen, or oxygen. However, the optimal crystallization temperature of 175 degrees C is unperturbed across conditions. Rapid modulation about the annealing temperature of 175 degrees C in +/-25 degrees C steps (150-200 degrees C) promotes crystallization and significantly improves the film morphology by overcoming the presence of impregnated water trapped in the material. Following this processing protocol, we demonstrate substantial growth to micron-size grains via observation inside of an environmentally controlled transmission electron microscope. Adapting this insight from our in situ microscopy, we are able to provide an informed materials protocol to control the structure and morphology of these organic-inorganic semiconductors, which is readily applicable to benchtop device growth strategies.

  15. Temperature dependence of the deformation behavior of 316 stainless steel after low temperature neutron irradiation

    SciTech Connect

    Pawel-Robertson, J.E.; Rowcliffe, A.F.; Grossbeck, M.L.

    1996-10-01

    The effects of low temperature neutron irradiation on the tensile behavior of 316 stainless steel have been investigated. A single heat of solution annealed 316 was irradiated to 7 and 18 dpa at 60, 200, 330, and 400{degrees}C. The tensile properties as a function of dose and as a function of temperature were examined. Large changes in yield strength, deformation mode, strain to necking, and strain hardening capacity were seen in this irradiation experiment. The magnitudes of the changes are dependent on both irradiation temperature and neutron dose. Irradiation can more than triple the yield strength over the unirradiated value and decrease the strain to necking (STN) to less than 0.5% under certain conditions. A maximum increase in yield strength and a minimum in the STN occur after irradiation at 330{degrees}C but the failure mode remains ductile.

  16. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    SciTech Connect

    Hu, Yu-Min Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung; Li, Sih-Sian

    2015-05-07

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu{sup 2+} state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu{sup 1+} ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.

  17. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    NASA Astrophysics Data System (ADS)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

    2017-04-01

    Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  18. Luminescence sensitivity changes in natural quartz induced by high temperature annealing: a high frequency EPR and OSL study

    NASA Astrophysics Data System (ADS)

    Poolton, N. R. J.; Smith, G. M.; Riedi, P. C.; Bulur, E.; Bøtter-Jensen, L.; Murray, A. S.; Adrian, M.

    2000-04-01

    Quartz undergoes very significant luminescence sensitivity changes after high temperature annealing (0-1200 °C), with particular enhancement occurring between the phase transition temperatures 573 and 870 °C. In order to understand why this occurs, high frequency electron paramagnetic resonance (EPR), operating at 90 GHz, has been used to monitor the structure and population of defects in natural sedimentary quartz, following annealing and icons/Journals/Common/gamma" ALT="gamma" ALIGN="TOP"/> -irradiation. The results are compared with the optically stimulated luminescence (OSL) data of the same samples. It is shown that: (i) the structure and population of the dominant [AlO4 ]0 recombination centres are largely unaffected by the annealing process; (ii) the oxygen vacancy E´ centres are destroyed when annealed at temperatures between the phase transitions and; (iii) the numbers of both [TiO4 /H+ ]0 and [TiO4 /Li+ ]0 donors increase between 400 and 700 °C. Photo-EPR spectra are presented, providing evidence that both the Ti associated donors and Al acceptors are directly involved in the OSL process. The heat-induced changes in the population of these EPR defects is mirrored in part by the change in the luminescence sensitivity of several OSL components. Evidence is also presented suggesting that E´ may act as non-radiative centres competing in the OSL process.

  19. Effect of annealing temperature on the supercapacitor behaviour of β-V{sub 2}O{sub 5} thin films

    SciTech Connect

    Jeyalakshmi, K.; Vijayakumar, S.; Nagamuthu, S.; Muralidharan, G.

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► Structural, optical, supercapacitor properties of β-V{sub 2}O{sub 5} thin films are reported. ► Influence of annealing temperature on β-V{sub 2}O{sub 5} thin films have been studied. ► Film annealed at 300 °C exhibit lower charge transfer resistance. -- Abstract: Vanadium pentoxide thin films are prepared via sol–gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 °C to 400 °C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V{sub 2}O{sub 5} in β-phase up to annealing temperature of 350 °C and at 400 °C the structural transformation to α-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2–2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 °C for an hour exhibits a maximum specific capacitance of 346 F g{sup −1} at a scan rate of 5 mV s{sup −1}.

  20. Regulation of Silk Material Structure by Temperature-Controlled Water Vapor Annealing

    PubMed Central

    Hu, Xiao; Shmelev, Karen; Sun, Lin; Gil, Eun-Seok; Park, Sang-Hyug; Cebe, Peggy; Kaplan, David L.

    2011-01-01

    We present a simple and effective method to obtain refined control of the molecular structure of silk biomaterials through physical temperature-controlled water vapor annealing (TCWVA). The silk materials can be prepared with control of crystallinity, from a low content using conditions at 4°C (alpha-helix dominated silk I structure), to highest content of ~60% crystallinity at 100°C (beta-sheet dominated silk II structure). This new physical approach covers the range of structures previously reported to govern crystallization during the fabrication of silk materials, yet offers a simpler, green chemistry, approach with tight control of reproducibility. The transition kinetics, thermal, mechanical, and biodegradation properties of the silk films prepared at different temperatures were investigated and compared by Fourier transform infrared spectroscopy (FTIR), differential scanning calorimetry (DSC), uniaxial tensile studies, and enzymatic degradation studies. The results revealed that this new physical processing method accurately controls structure, in turn providing control of mechanical properties, thermal stability, enzyme degradation rate, and human mesenchymal stem cell interactions. The mechanistic basis for the control is through the temperature controlled regulation of water vapor, to control crystallization. Control of silk structure via TCWVA represents a significant improvement in the fabrication of silk-based biomaterials, where control of structure-property relationships is key to regulating material properties. This new approach to control crystallization also provides an entirely new green approach, avoiding common methods which use organic solvents (methanol, ethanol) or organic acids. The method described here for silk proteins would also be universal for many other structural proteins (and likely other biopolymers), where water controls chain interactions related to material properties. PMID:21425769

  1. Wide Temperature Magnetization Characteristics of Transverse Magnetically Annealed Amorphous Tapes for High Frequency Aerospace Magnetics

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.; Schwarze, Gene E.

    1999-01-01

    100 kHz magnetization properties of sample transverse magnetically annealed, cobalt-based amorphous and iron-based nanocrystalline tape wound magnetic cores are presented over the temperature range of -150 C to 150 C, at selected values of B(sub peak). Frequency resolved characteristics are given over the range of 50 kHz to 1 MHz, but at B(sub peak) = 0.1 T and 50 C only. Basic exciting winding current and induced voltage data were taken on bare toroidal cores, in a standard type measurement setup. A linear permeability model, which represents the core by a parallel L-R circuit, is used to interpret and present the magnetization characteristics and several figures of merit applicable to inductor materials are reviewed. The 100 kHz permeability thus derived decreases with increasing temperature for the Fe-based, nanocrystalline material, but increases roughly linearly with temperature for the two Co-based materials, as long as B(sub peak) is sufficiently low to avoid saturation effects. Due to the high permeabilities, rather low values of the 'quality factor' Q, from about 20 to below unity, were obtained over the frequency range of 50 kHz to 1 MHz (50 C, B(sub peak) = 0.1 T). Therefore these cores must be gapped in order to make up high Q or high current inductors. However, being rugged, low core loss materials with flat B-H loop characteristics, they may provide new solutions to specialty inductor applications.

  2. The room temperature annealing peak in ionomers: Ionic crystallites or water absorption

    SciTech Connect

    Goddard, R.J.; Grady, B.P.; Cooper, S.L. . Dept. of Chemical Engineering)

    1994-03-28

    A quaternized diol, 3-(trimethylammonio)-1,2-propanediol neutralized with either bromine or iodine, was used to produce a polyurethane cationomer with a poly(tetramethylene oxide) soft segment and a 4,4[prime]-diphenylmethane diisocyanate hard segment. If those cationomers were annealed at room temperature for a period of approximately 1 month in a desiccator filled with dry CaSO[sub 4], differential scanning calorimetry (DSC) studies showed an endotherm centered near 70 C which was not present in the unannealed polymer and did not reappear upon subsequent cooling and heating cycles in the DSC. Some authors have suggested that a very similar endotherm found in other ionomers, most notably ethylene-methacrylic acid (E-MAA) copolymer ionomers, was due to an order-disorder transition within the ionic aggregates, i.e. ionic crystallite melting. In order to isolate the origin of this endotherm, the local environment around the anion in compression molded bromine neutralized samples was measured using the extended X-ray absorption fine-structure (EXAFS) technique. By measuring the change in the local environment over the temperature range corresponding to the DSC endotherm, it has been shown that this endotherm corresponds to water leaving the bromine coordination shell, rather than ionic crystallite melting. Other studies which include thoroughly drying the material in a vacuum oven below the transition temperature to remove the water suggest that the endotherm is due to the energetic change associated with water leaving the coordination environment of the anion in combination with water vaporization.

  3. A re-evaluation of geological timescale benchmarks and temperature sensitivity of fission-track annealing in apatites

    NASA Astrophysics Data System (ADS)

    Luijendijk, Elco; Andriessen, Paul

    2016-04-01

    Current models of the temperature sensitivity of fission track annealing in apatites have been calibrated using fission track data from boreholes, with the assumption that these samples are currently at maximum burial depth and temperatures. The most detailed data-set comes from boreholes located in the Otway basin, Australia. However, several lines of evidence suggest that these samples are not at their maximum burial depth and temperature and consequently the cooling temperature of the apatite fission track thermochronometer would then be higher than previously assumed. Significant late Cenozoic exhumation in the Otway Basin was suggested by earlier studies that document a major late-Miocene erosional unconformity, folding and trusting of underlying sediments and elevated strandlines along the coast. In addition, anomalously young apatite (U-Th)/He ages in several boreholes in the basin suggest that the basin's sediments have been exhumed and cooled in the late Cenozoic. We explore the effects of late Cenozoic exhumation on fission track data in the Otway basin using a 1D model of burial and thermal history. We show that simulating several 100s of meters of exhumation in the basin results in significant misfit between current annealing models and observed fission track data. The additional exhumation reconciles the Otway basin data with a second detailed fission track dataset from boreholes in Southern Texas with a well-constrained thermal and burial history. We combine vitrinite reflectance data and U-Th/He data from the Otway basin to recalibrate the burial history of the Otway basin. Subsequently we combine the new thermal history of the Otway basin with the Southern Texas dataset to recalibrate the fission track annealing algorithm. The results suggest that fission-track annealing in apatites is underestimated by approximately 20°C by current annealing models, with significant implications for studies that use apatite fission track thermochronology to

  4. Temperature Dependence of Factors Controlling Isoprene Emissions

    NASA Technical Reports Server (NTRS)

    Duncan, Bryan N.; Yoshida, Yasuko; Damon, Megan R.; Douglass, Anne R.; Witte, Jacquelyn C.

    2009-01-01

    We investigated the relationship of variability in the formaldehyde (HCHO) columns measured by the Aura Ozone Monitoring Instrument (OMI) to isoprene emissions in the southeastern United States for 2005-2007. The data show that the inferred, regional-average isoprene emissions varied by about 22% during summer and are well correlated with temperature, which is known to influence emissions. Part of the correlation with temperature is likely associated with other causal factors that are temperature-dependent. We show that the variations in HCHO are convolved with the temperature dependence of surface ozone, which influences isoprene emissions, and the dependence of the HCHO column to mixed layer height as OMI's sensitivity to HCHO increases with altitude. Furthermore, we show that while there is an association of drought with the variation in HCHO, drought in the southeastern U.S. is convolved with temperature.

  5. Theoretical temperature dependence of solar cell parameters

    NASA Technical Reports Server (NTRS)

    Fan, John C. C.

    1986-01-01

    A simple formulation has been derived for the temperature dependence of cell parameters for any solar cell material. Detailed calculations have been performed for high-quality monocrystalline GaAs, Si and Ge cells. Preliminary experimental data for GaAs and Si cells are close to the calculated values. In general, the higher the energy gap of a material, the small is the temperature dependence of its solar cell parameters.

  6. Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

    NASA Astrophysics Data System (ADS)

    Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rahman, S. A.; Rusop, Mohamad

    2016-07-01

    This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which its resistivity is 5.36 × 104 Ωcm-1. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

  7. Temperature dependence of Vortex Charges in High Temperature Superconductors

    NASA Astrophysics Data System (ADS)

    Ting, C. S.; Chen, Yan; Wang, Z. D.

    2003-03-01

    By considering of competition between antiferromagnetic (AF) and d-wave superconductivity orders, the temperature dependence of the vortex charge in high Tc superconductors is investigated by solving self-consistently the Bogoliubov-de Gennes equations. The magnitude of induced antiferromagnetic order inside the vortex core is temperature dependent. The vortex charge is always negative when a sufficient strength of AF order presents at low temperature while the AF order may be suppressed at higher temperature and there the vortex charge becomes positive. A first order like transition from negative to the positive vortex charges occurs at certain temperature TN which is very close to the temperature for the disappearence of the local AF order. The vortex charges at various doping levels will also going to be examined. We show that the temperature dependence of the vortex core radius with induced AF order exhibits a weak Kramer-Pesch effect. The local density of states spectrum has a broad peak pattern at higher temperature while it exhibits two splitting peak at lower temperature. This temperature evolution may be detected by the future scanning-tunnel-microscope experiment. In addition, the effect of the vortex charge on the mixed state Hall effect will be discussed.

  8. Effects of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Li, Jitao; Yang, Dinyu; Zhu, Xinghua; Sun, Hui; Gao, Xiuying; Wangyang, Peihua; Tian, Haibo

    ZnO thin films have been prepared by sol-gel method in this paper. Zinc acetate, ethanol and mono-ethanolamine (MEA) were used as a metal precursor, solvent and stabilizer, respectively. The structural and optical properties of ZnO thin films were investigated and found to be strongly dependent on the annealing temperature. X-ray diffraction patterns revealed that as the annealing temperature increased, the crystalline quality of the samples became better. The atomic force microscope images of the samples show larger and compact grains at higher heat-treating temperature. The ultraviolet-visible transmittance spectra indicated that as the temperature increased, the transmittance improved and the energy gap became larger (from 3.11eV at 400∘C to 3.22eV at 500∘C). The photoluminescence spectra presented a variety of emission peaks, two strong peaks at 390nm and 469nm, respectively, from the intrinsic emission and point defects, and the intensity of these peaks decreased with the increase of temperature.

  9. Influence of high-temperature annealing on the orientation of the unipolarity vector in lead zirconate titanate thin films

    NASA Astrophysics Data System (ADS)

    Kanareikin, A. G.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.; Sergienko, A. Yu.; Sergeeva, O. N.

    2016-11-01

    The factors responsible for the change in the orientation of the natural unipolarity vector due to heating to the Curie temperature of a Pt/PZT/Pt thin-film capacitor (PZT—lead zirconate titanate) formed on a TiO2/SiO2/Si substrate have been considered. Lead zirconate titanate thin layers containing a small excess of lead oxide have been formed ex situ using high-frequency magnetron sputtering with a variation in the annealing temperature (crystallization of the perovskite phase) in the range from 580 to 650°C. It has been assumed that the reorientation of the unipolarity vector in the PZT layer is caused by the change in the mechanism of crystallization of the perovskite phase with an increase in the annealing temperature.

  10. Escherichia coli survival in waters: Temperature dependence

    EPA Science Inventory

    Knowing the survival rates of water-borne Escherichia coli is important in evaluating microbial contamination and making appropriate management decisions. E. coli survival rates are dependent on temperature, a dependency that is routinely expressed using an analogue of the Q10 mo...

  11. E. coli survival in waters: temperature dependence

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Knowing the survival rates of water-borne Escherichia coli is important for evaluating microbial contamination and in making appropriate management decisions. E. coli survival rates are dependent on temperature; this dependency is routinely expressed using an analog of the Q10 model. This suggestion...

  12. Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

    PubMed

    Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

    2014-06-01

    Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

  13. Effect of Annealing Temperature on Bi3.25La0.75Ti3O12 Powders for Humidity Sensing Properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; He, Jinping; Yuan, Mengjiao; Jiang, Bin; Li, Peiwen; Tong, Yexing; Zheng, Xuejun

    2017-01-01

    Bi3.25La0.75Ti3O12 (BLT) powders have been synthesized via the metal-organic decomposition method with annealing of the BLT precursor solution at 350°C, 450°C, 550°C, 650°C or 750°C. The crystalline structure and morphology of the BLT powders were characterized by x-ray diffraction analysis, field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, and specific surface and pore size analyses. The humidity sensing properties of the BLT powders annealed at the five temperatures were investigated to determine the effect of annealing temperature. The annealing temperature strongly influenced the grain size, pore size distribution, and specific surface area of the BLT powders, being largely correlated to their humidity sensing properties. The specific surface area of the BLT powder annealed at 550°C was 68.2 m2/g, much larger than for the other annealing temperatures, and the majority of the pores in the BLT powder annealed at 550°C were mesoporous, significantly increasing the adsorption efficiency of water vapor onto the surface of the material. The impedance of the BLT powder annealed at 550°C varied by more than five orders of magnitude over the whole humidity range at working frequency of 100 Hz, being approximately five times greater than for BLT powders annealed at other temperatures. The response time was about 8 s, with maximum hysteresis of around 3% relative humidity. The BLT powder annealed at 550°C exhibited the best humidity sensing properties compared with the other annealing temperatures. We expect that these results will offer useful guidelines for preparation of humidity sensing materials.

  14. Liquid-filled ionization chamber temperature dependence

    NASA Astrophysics Data System (ADS)

    Franco, L.; Gómez, F.; Iglesias, A.; Pardo, J.; Pazos, A.; Pena, J.; Zapata, M.

    2006-05-01

    Temperature and pressure corrections of the read-out signal of ionization chambers have a crucial importance in order to perform high-precision absolute dose measurements. In the present work the temperature and pressure dependences of a sealed liquid isooctane filled ionization chamber (previously developed by the authors) for radiotherapy applications have been studied. We have analyzed the thermal response of the liquid ionization chamber in a ˜20C interval around room temperature. The temperature dependence of the signal can be considered linear, with a slope that depends on the chamber collection electric field. For example, a relative signal slope of 0.27×10-2 K-1 for an operation electric field of 1.67×106 V m-1 has been measured in our detector. On the other hand, ambient pressure dependence has been found negligible, as expected for liquid-filled chambers. The thermal dependence of the liquid ionization chamber signal can be parametrized within the Onsager theory on initial recombination. Considering that changes with temperature of the detector response are due to variations in the free ion yield, a parametrization of this dependence has been obtained. There is a good agreement between the experimental data and the theoretical model from the Onsager framework.

  15. Temperature dependence of sapphire fiber Raman scattering

    SciTech Connect

    Liu, Bo; Yu, Zhihao; Tian, Zhipeng; Homa, Daniel; Hill, Cary; Wang, Anbo; Pickrell, Gary

    2015-04-27

    Anti-Stokes Raman scattering in sapphire fiber has been observed for the first time. Temperature dependence of Raman peaks’ intensity, frequency shift, and linewidth were also measured. Three anti-Stokes Raman peaks were observed at temperatures higher than 300°C in a 0.72-m-long sapphire fiber excited by a second-harmonic Nd YAG laser. The intensity of anti-Stokes peaks are comparable to that of Stokes peaks when the temperature increases to 1033°C. We foresee the combination of sapphire fiber Stokes and anti-Stokes measurement in use as a mechanism for ultrahigh temperature sensing.

  16. Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO₂ superlattices

    SciTech Connect

    López-Vidrier, J. Hernández, S.; López-Conesa, L.; Peiró, F.; Garrido, B.; Hiller, D.; Gutsch, S.; Zacharias, M.; Estradé, S.

    2014-10-07

    The effect of the annealing temperature and the SiO₂ barrier thickness of silicon nanocrystal (NC)/SiO₂ superlattices (SLs) on their structural and optical properties is investigated. Energy-filtered transmission electron microscopy (TEM) revealed that the SL structure is maintained for annealing temperatures up to 1150 °C, with no variation on the nanostructure morphology for different SiO₂ barrier thicknesses. Nevertheless, annealing temperatures as high as 1250 °C promote diffusion of Si atoms into the SiO₂ barrier layers, which produces larger Si NCs and the loss of the NC size control expected from the SL approach. Complementary Raman scattering measurements corroborated these results for all the SiO₂ and Si-rich oxynitride layer thicknesses. In addition, we observed an increasing crystalline fraction up to 1250 °C, which is related to a decreasing contribution of the suboxide transition layer between Si NCs and the SiO₂ matrix due to the formation of larger NCs. Finally, photoluminescence measurements revealed that the emission of the superlattices exhibits a Gaussian-like lineshape with a maximum intensity after annealing at 1150 °C, indicating a high crystalline degree in good agreement with Raman results. Samples submitted to higher annealing temperatures display a progressive emission broadening, together with an increase in the central emission wavelength. Both effects are related to a progressive broadening of the size distribution with a larger mean size, in agreement with TEM observations. On the other hand, whereas the morphology of the Si NCs is unaffected by the SiO₂ barrier thickness, the emission properties are slightly modified. These observed modifications in the emission lineshape allow monitoring the precipitation process of Si NCs in a direct non-destructive way. All these experimental results evidence that an annealing temperature of 1150 °C and 1-nm SiO₂ barrier can be reached whilst preserving the SL structure, being

  17. Effect of annealing temperature on the structural and optical properties of CeO2:Ni thin films

    NASA Astrophysics Data System (ADS)

    Murugan, R.; Vijayaprasath, G.; Sakthivel, P.; Mahalingam, T.; Ravi, G.

    2016-05-01

    High quality Ni-doped CeO2 (CeO2:Ni) thin films were deposited on glass substrates at room temperature by using radio frequency magnetron sputtering. The effect of annealing temperature on structural and optical properties of the CeO2:Ni films was investigated. The structural, optical and vibrational properties of the films were determined using X-ray diffraction (XRD), photoluminescence spectrometer (PL) and Raman spectrometer. It was found that the as-deposited film has a fluorite cubic structure. By increasing annealing temperature from 100°C to 300°C, the crystalline quality of the thin films could be improved. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton, defect related emissions respectively. The micro-Raman results show the characteristic peak of CeO2 F2g at 465 cm-1 and 2L0 at 1142 cm-1. Defect peaks like D and 0 bands were observed at 641 cm-1 and 548 cm-1 respectively. It is found from the spectra that the peak intensity of the films increased with increase of annealing temperature.

  18. Through-vial impedance spectroscopy of the mechanisms of annealing in the freeze-drying of maltodextrin: the impact of annealing hold time and temperature on the primary drying rate.

    PubMed

    Smith, Geoff; Arshad, Muhammad Sohail; Polygalov, Eugene; Ermolina, Irina

    2014-06-01

    The study aims to investigate the impact of annealing hold time and temperature on the primary drying rate/duration of a 10% (w/v) solution of maltodextrin with an emphasis on how the mechanisms of annealing might be understood from the in-vial measurements of the ice crystal growth and the glass transition. The electrical impedance of the solution within a modified glass vial was recorded between 10 and 10(6) Hz during freeze-drying cycles with varying annealing hold times (1-5 h) and temperatures. Primary drying times decreased by 7%, 27% and 34% (1.1, 4.3 and 5.5 h) with the inclusion of an annealing step at temperatures of -15°C, -10°C and -5°C, respectively. The glass transition was recorded at approximately -16°C during the re-heating and re-cooling steps, which is close to the glass transition (Tg ') reported for 10% (w/v) maltodextrin and therefore indicates that a maximum freeze concentration (∼86%, w/w, from the Gordon-Taylor equation) was achieved during first freezing, with no further ice being formed on annealing. This observation, coupled to the decrease in electrical resistance that was observed during the annealing hold time, suggests that the reduction in the drying time was because of improved connectivity of ice crystals because of Ostwald ripening rather than devitrification.

  19. Dose and doping dependence of damage annealing in Fe MeV implanted InP

    SciTech Connect

    Carnera, A.; Fraboni, B.; Gasparotto, A. |; Priolo, F. |; Camporese, A.; Rossetto, G.; Frigeri, C.; Cassa, A.

    1996-12-31

    High energy (2 MeV) ion implantation of Fe in InP has been investigated by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and secondary ions mass spectrometry (SIMS). The implanted doses ranged between 5 {times} 10{sup 13} and 5 {times} 10{sup 14} at/cm{sup 2}. Annealing in the 650--800 C range was performed and the primary as well as secondary damage evolution has been studied. The correlations between defect structure and Fe redistribution properties have been carefully analyzed. The results show the role of the primary defect structure in determining the annealing properties, both for damage recovery and Fe redistribution. The latter is also influenced by the doping of the substrate.

  20. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    NASA Astrophysics Data System (ADS)

    Yastrubchak, O.; Wosinski, T.; Gluba, L.; Andrearczyk, T.; Domagala, J. Z.; Żuk, J.; Sadowski, J.

    2014-01-01

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  1. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    SciTech Connect

    Pastor, D.; Cusco, R.; Artus, L.; Gonzalez-Diaz, G.; Iborra, E.; Jimenez, J.; Peiro, F.; Calleja, E.

    2006-08-15

    We have studied the effects of rapid thermal annealing at 1300 deg.C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si{sub 3}N{sub 4} crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3 nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

  2. Temperature dependence of standard model CP violation.

    PubMed

    Brauner, Tomáš; Taanila, Olli; Tranberg, Anders; Vuorinen, Aleksi

    2012-01-27

    We analyze the temperature dependence of CP violation effects in the standard model by determining the effective action of its bosonic fields, obtained after integrating out the fermions from the theory and performing a covariant gradient expansion. We find nonvanishing CP violating terms starting at the sixth order of the expansion, albeit only in the C-odd-P-even sector, with coefficients that depend on quark masses, Cabibbo-Kobayashi-Maskawa matrix elements, temperature and the magnitude of the Higgs field. The CP violating effects are observed to decrease rapidly with temperature, which has important implications for the generation of a matter-antimatter asymmetry in the early Universe. Our results suggest that the cold electroweak baryogenesis scenario may be viable within the standard model, provided the electroweak transition temperature is at most of order 1 GeV.

  3. Depth Profile of Mn in GaAs/Mn/GaAs Heterostuctures and Thermal Annealing Effects Studied by Angular Dependence of X-ray Fluorescence

    NASA Astrophysics Data System (ADS)

    Kim, S.; Soo, Y. L.; Kioseoglou, G.; Chen, X.; Luo, H.; Kao, Y. H.; Sasaki, Y.; Liu, X.; Furdyna, J. K.

    2003-03-01

    Angular dependence of x-ray fluorescence (ADXRF) technique has been utilized to study Mn depth profile in GaAs (60 ÅMn (5 Åstructures MBE-grown on GaAs and annealed at temperatures 350, 450, and 550^oC. The nominal structure for as-grown sample was confirmed from detailed fluorescence analysis. We have found that a large amount of Mn migrate into the top GaAs layer in the sample annealed at 550^oC while the other samples showed only a slight change in the Mn profile as compared to the as-grown sample. These results provide unique information on the depth distribution of Mn atoms in Mn/GaAs magnetic digital alloys as a function of temperature in addition to those obtained previously^1 by means of grazing incidence x-ray scattering (GIXS) and x-ray diffraction. We have thus demonstrated that ADXRF technique is a useful nondestructive tool for probing the depth profile of samples with an ultra thin overlay or containing a small amount of impurity atoms. 1. G. Kioseoglou, S. Kim, Y. L. Soo, X. Chen, H. Luo, Y. H. Kao, Y. Sasaki, X. Liu, and J. K. Furdyna, Appl. Phys. Lett. 80, 1150 (2002).

  4. Temperature dependence of polymer photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Nakazawa, Yuko

    One of many steps to develop a sustainable society is to reduce the use of fossil fuels by replacing them with renewable energy sources, such as solar energy. This dissertation concerns one of the most contemporary methods to harvest solar radiation and covert it to electricity, using thin polymer films. The photovoltaic devices in this study consisted of a thin layer of p-phenylenevinylene (PPV) based semiconducting polymer sandwiched between two metals (semi-transparent ITO and evaporated metal electrode). Two modified device structures were studied, an interfacial heterojunction device, which includes an additional layer of inorganic n-type semiconductor (Ti-oxides) and a bulk heterojunction device, which is formed by blending electron-attracting materials. Both modifications resulted in higher device performances under ambient conditions due to an increased number of dissociation sites. From studies of inorganic solar cells, it is well known that temperature has a large effect on device performance. However, there are only a few studies on organic Solar cells, concerning the temperature dependence. This thesis focuses on understanding the temperature dependent behaviors of polymer photovoltaic devices. Temperature dependence study allows us to examine how the device parameters such as short circuit current (Isc) and open circuit voltage (Voc) are affected by the material properties and the device architectures. The current-voltage relationships were measured in a temperature controlled OXFORD cryostat operating between 150K and 404K. From the dark current-voltage measurements, the field-independent hole mobility (mu0) was extracted, using a space charge limited current analysis. From the photocurrent-voltage measurements, the temperature dependence on Isc, Voc, and fill factor were studied. The temperature characteristics of Isc (T) were compared to that of mu0(T), and two different dependencies were obtained for different device architectures. The temperature

  5. Investigations of Low Temperature Time Dependent Cracking

    SciTech Connect

    Van der Sluys, W A; Robitz, E S; Young, B A; Bloom, J

    2002-09-30

    The objective of this project was to investigate metallurgical and mechanical phenomena associated with time dependent cracking of cold bent carbon steel piping at temperatures between 327 C and 360 C. Boiler piping failures have demonstrated that understanding the fundamental metallurgical and mechanical parameters controlling these failures is insufficient to eliminate it from the field. The results of the project consisted of the development of a testing methodology to reproduce low temperature time dependent cracking in laboratory specimens. This methodology was used to evaluate the cracking resistance of candidate heats in order to identify the factors that enhance cracking sensitivity. The resultant data was integrated into current available life prediction tools.

  6. Selective synthesis of boron nitride nanotubes by self-propagation high-temperature synthesis and annealing process

    SciTech Connect

    Wang Jilin; Zhang Laiping; Zhao Guowei; Gu Yunle; Zhang Zhanhui; Zhang Fang; Wang Weimin

    2011-09-15

    Four types of BN nanotubes are selectively synthesized by annealing porous precursor in flowing NH{sub 3} and NH{sub 3}/H{sub 2} atmosphere at temperature ranging from 1000 to 1200 deg. C in a vertical furnace. The as-synthesized BN nanotubes, including cylinder, wave-like, bamboo-like and bubble-chain, are characterized by XRD, FTIR, Raman, SEM, TEM and HRTEM. Three phenomenological growth models are proposed to interpret growth scenario and structure features of the four types of BN nanotubes. Selectivity of nanotubes formation is estimated as approximately 80-95%. The precursor containing B, Mg, Fe and O prepared by self-propagation high-temperature synthesis (SHS) method plays a key role in selective synthesis of the as-synthesized BN nanotubes. Chemical reactions are also discussed. - Graphical Abstract: Four types of BN nanotubes are selectively synthesized by annealing porous precursor prepared by self-propagation high-temperature synthesis. Three phenomenological growth models are proposed to reveal growth scenario and characteristics of the as-synthesized BN nanotubes. Highlights: > Four types of BN nanotubes are selectively synthesized by annealing porous precursor. > Selectivity of BN nanotubes formation is estimated as approximately 80-95 wt%. > Three growth models are proposed to interpret growth of the as-synthesized BN nanotubes. > The precursor prepared by SHS method plays a key role in selective synthesis process.

  7. Effects of dip-coating speed and annealing temperature on structural, morphological and optical properties of sol-gel nano-structured TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Touam, Tahar; Atoui, Mohamed; Hadjoub, Ilhem; Chelouche, Azeddine; Boudine, Boubekeur; Fischer, Alexis; Boudrioua, Azzedine; Doghmane, Abdellaziz

    2014-09-01

    We reported material characterization of the nano-structured TiO2 thin films prepared by the sol-gel dip-coating process on glass substrates. The dependence of the structural, morphological and optical properties of the synthesized films on the fabrication parameters such as withdrawal velocity and annealing temperature were investigated by the techniques of X-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-visible spectrophotometry. The results indicate that for the TiO2 films annealed at 500 °C there exhibits (1 0 1) XRD peak corresponding to the anatase phase of TiO2. The latter is consistent with the recorded Raman signal observed at 142 cm-1 (Eg mode) and 391 cm-1 (B1g mode), respectively. From the analyses made on the SEM micrographs and AFM images, it was revealed that the morphology and surface roughness of the thin films would depend on the withdrawal speed and the heat treatment temperature. The UV-visible spectroscopy analyses show that all the films were transparent in the visible region with an average transmittance of more than 70%. With an increase on the dip-coating speed from 1 cm/min to 3 cm/min, we observed a spectral red shift of the absorption edge from 3.76 eV to 3.71 eV, indicating a decrease in the bandgap energy (Eg) of the films.

  8. Carbon films embedded by nickel nanoparticles: fluctuation in hopping rate and variable-range hopping with respect to annealing temperature

    NASA Astrophysics Data System (ADS)

    Dalouji, Vali; Elahi, Smohammad; Solaymani, Shahram; Ghaderi, Atefeh; Elahi, Hossein

    2016-05-01

    In this work, the electrical properties of carbon-nickel films annealed at different temperatures (573, 773, 1073 and 1273 K) in the temperature range 15-300 K were investigated. The films were grown by radio frequency magnetron co-sputtering on quartz substrates at room temperature. The multiphonon hopping conduction mechanism is found to dominate the electrical transport in the temperature range 150-300 K. It can be seen that the room-temperature hopping rate (ΓRT) at 773 K has maximum value of 56.8 × 105 s-1. Our results of conductivity measurements at high temperature are in good agreement with strong carrier-lattice coupling model; on the other hand, the conductivity in the range 15-50 K is well described in terms of variable-range hopping (VRH) conduction mechanism. The localized state density around Fermi level N( E F) and the average hopping energy W hop at low temperature for the films annealed at 773 K have maximum value of 2.23 × 1023 (cm-3 eV-1) and minimum value of 9.74 × 10-4 eV, respectively.

  9. Influence of annealing temperature and Sn doping on the optical properties of hematite thin films determined by spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    de Souza, Lígia P.; Chaves, Rodrigo O. G.; Malachias, Angelo; Paniago, Roberto; Ferreira, Sukarno O.; Ferlauto, Andre S.

    2016-06-01

    Hematite (α-Fe2O3) thin films were prepared by sol-gel route and investigated for application in H2 generation by photo-assisted water splitting. The photoelectrochemical (PEC) performance was shown to increase significantly for films deposited on SnO2:F/glass subjected to high temperature (T) annealing (>750 °C). Strong correlation was found between photogenerated current, donor concentration, and Sn concentration as determined by Mott-Schottky analysis and X-ray photoelectron spectroscopy. The effects of thermal annealing and Sn addition in the resulting microstructure and optical properties of hematite films deposited on fused silica substrates were determined by a combination of structural characterization techniques and spectroscopic ellipsometry. Thermal annealing (>600 °C) induces a higher optical absorption that is associated directly to film densification and grain growth; however, it promotes no changes in the energy positions of the main Fe2O3 electronic transitions. The band gap energy was found to be 2.21 eV and independent of microstructure and of Sn concentration for all studied films. On the other hand, Sn can be incorporated in the Fe2O3 lattice for concentration up to Sn/Fe ˜2%, leading to an increase in energy split of the main absorption peak, attributed to a distortion of the Fe2O3 lattice. For higher concentrations, Sn incorporation leads to a reduction in absorption, associated with higher porosity and the formation of a secondary Sn-rich phase. In summary, the variation in the optical properties induced by thermal annealing and Sn addition cannot account for the order of magnitude increase of the current density generated by photoanodes annealed at high T (>750 °C); thus, it is concluded that the major contribution for the enhanced PEC performance comes from improved electronic properties induced by the n-type doping caused by Sn diffusion from the SnO2:F substrate.

  10. Colloidal solitary waves with temperature dependent compressibility

    NASA Astrophysics Data System (ADS)

    Azmi, A.; Marchant, T. R.

    2014-05-01

    Spatial solitary waves which form in colloidal suspensions of dielectric nanoparticles are considered. The interactions, or compressibility, of the colloidal particles, is modelled using a series in the particle density, or packing fraction, where the virial, or series, coefficients depend on the type of particle interaction model. Both the theoretical hard disk and sphere repulsive models, and a model with temperature dependent compressibility, are considered. Experimental results show that particle interactions can be temperature dependent and either repulsive or attractive in nature, so we model the second virial coefficient using a physically realistic temperature power law. One- and two-dimensional semi-analytical colloidal solitary wave solutions are found. Trial functions, based on the form of the nonlinear Schrödinger equation soliton, are used, together with averaging, to develop the semi-analytical solutions. When the background packing fraction is low, the one-dimensional solitary waves have three solutions branches (with a bistable regime) while the two-dimensional solitary waves have two solution branches, with a single stable branch. The temperature dependent second virial coefficient results in changes to the solitary wave properties and the parameter space, in which multiple solutions branches occur. An excellent comparison is found between the semi-analytical and numerical solutions.

  11. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    SciTech Connect

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-12-15

    A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

  12. A Low-Power and In Situ Annealing Mitigation Technique for Fast Neutrons Irradiation of Integrated Temperature Sensing Diodes

    SciTech Connect

    Francis, Laurent A.; Andre, Nicolas; Gerard, Pierre; Flandre, Denis; Ali, S. Zeeshan; Udrea, Florin

    2015-07-01

    High doses of fast neutrons is detrimental to the performance of most common solid-state devices such as diodes and transistors. The ionizing effect is observed in particular for diodes used as simple integrated temperature sensors, or thermo-diodes, when their junction voltage is measured at constant current bias. In this work, we present a low-power and in situ mitigation technique based on Silicon-on-Insulator (SOI) micro-hot-plates to recover thermo-diodes. The basic operating principle consists in annealing the temperature-sensitive diodes integrated on the membrane during or after their irradiation in order to restore similar sensing characteristics over time. We measured thermo-diodes integrated to micro-hot-plates during their irradiation by fast neutrons (23 MeV peak) with total doses about 2.97±0.08 kGy. The membrane annealing is taking place at 450 deg. C using 40 mW of electrical power. Thanks to the annealing, the diode keeps a total measurement error below 0.5 deg. C. In this harsh radiation environment and beside the good tolerance of the thermo-diodes and the membrane materials to the total ionizing dose, the thermo-diode located on the heating membrane keeps a constant sensitivity. The demonstrated resistance of micro-hot-plates and the integrated thermo-diodes to fast neutron radiations can extend their use in nuclear plants and for radiation detectors. (authors)

  13. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    SciTech Connect

    Phuan, Yi Wen; Chong, Meng Nan; Zhu, Tao; Yong, Siek-Ting; Chan, Eng Seng

    2015-09-15

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600

  14. The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing

    SciTech Connect

    Heng, C. L. Li, J. T.; Su, W. Y.; Yin, P. G.; Finstad, T. G.

    2015-01-28

    We studied the photoluminescence (PL) and structural properties of Ce and Yb co-doped silicon oxide films after high temperature annealing. The PL spectra of Ce{sup 3+} and Yb{sup 3+} ions were sensitive to the structural variation of the films, and the Yb PL intensities were significantly enhanced especially upon 1200 °C annealing. X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, indicated that rare earth silicates and the CeO{sub 2} phase had formed in the oxides. The proportions of the phases varied with the “nominal Si-richness” of the films. Energy transfer from the excited Ce{sup 3+} to Yb{sup 3+} can be inferred from both PL excitation and decay spectra.

  15. Room-temperature laser annealing for solid-phase epitaxial crystallization of β-Ga2O3 thin films

    NASA Astrophysics Data System (ADS)

    Shiojiri, Daishi; Fukuda, Daiji; Yamauchi, Ryosuke; Tsuchimine, Nobuo; Koyama, Koji; Kaneko, Satoru; Matsuda, Akifumi; Yoshimoto, Mamoru

    2016-10-01

    The epitaxial crystallization of β-Ga2O3 thin films on NiO-buffered α-Al2O3(0001) substrates via the solid-phase crystallization of amorphous Ga2O3 thin films by KrF excimer laser annealing at room temperature (RT) was examined. The results of X-ray and reflection high-energy electron diffraction measurements indicated that the epitaxial β-Ga2O3 (\\bar{2}01) thin films were fabricated by RT laser annealing. The optical bandgap of the thin films was estimated to be 4.9 eV from the results of UV/vis transmittance measurements. In the cathodoluminescence spectrum, UV-green luminescence was observed for the thin films. These optical properties are similar to those of bulk β-Ga2O3.

  16. Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing

    NASA Astrophysics Data System (ADS)

    Lomov, Andrey A.; Shcherbachev, Kirill D.; Chesnokov, Yury M.; Kiselev, Dmitrii A.; Miakonkikh, Andrew V.

    2016-12-01

    Transformation of microstructure of the buried He bubbles of silicon surface layer after He+ low energy plasma immersion ion implantation and subsequent low-thermal annealing were studied by high resolution X-ray diffraction and reflectivity, Rutherford backscattering spectroscopy, transmission electron and atomic force microscopy methods. The ion energies varied in the range 2 - 5 keV at constant exposure ion doses 5×·1017 cm-2. Formation of a three-layer structure (amorphous a-SiOx layer at the surface, amorphous a-Si layer with helium bubbles and buried helium bubbles heavy damaged tensile strained crystalline c-Si layer) that is retained after annealing was observed. Helium-filled bubbles are observed in an as-implanted sample. Evolution of the multilayer structure and the bubbles due to annealing are revealed and comparing with the structural parameters of an as-implanted sample was done. The bubbles are shown to trend into two-model distribution after annealing. The characteristic bubble size is determined to be in a range of 2-20 nm. Large size helium-filled bubbles are located in the amorphous a-Si layer. Small size bubbles are revealed inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in c-Si layer.

  17. Enthalpy relaxation and annealing effect in polystyrene.

    PubMed

    Sakatsuji, Waki; Konishi, Takashi; Miyamoto, Yoshihisa

    2013-07-01

    The effects of thermal history on the enthalpy relaxation in polystyrene are studied by differential scanning calorimetry. The temperature dependence of the specific heat in the liquid and the glassy states, that of relaxation time, and the exponent of the Kohlrausch-Williams-Watts function are determined by measurements of the thermal response against sinusoidal temperature variation. A phenomenological model equation previously proposed to interpret the memory effect in the frozen state is applied to the enthalpy relaxation and the evolution of entropy under a given thermal history is calculated. The annealing below the glass transition temperature produces two effects on enthalpy relaxation: the decay of excess entropy with annealing time in the early stage of annealing and the increase in relaxation time due to physical aging in the later stage. The crossover of these effects is reflected in the variation of temperature of the maximum specific heat observed in the heating process after annealing and cooling.

  18. Effect of substrate temperature and post-annealing on the properties of CIGS thin films deposited using e-beam evaporation

    NASA Astrophysics Data System (ADS)

    Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Jinze; Wang, Wei; Shang, Huirong; Li, Yufang

    2016-12-01

    Cu(InGa)Se2 (CIGS) thin films were prepared using e-beam evaporation on a soda-lime glass substrate. The effect of substrate temperature and the difference between substrate temperature and post-annealing on the properties of the CIGS thin films and solar cells were studied. X-ray diffraction (XRD) and Raman spectroscopy, energy-dispersive spectroscopy, scanning electron microscopy, UV-Vis-NIR and the Hall effect were used to characterize the structural properties, composition, morphology, optical properties and electrical properties of the as-prepared CIGS thin films, respectively. The results demonstrated that the photoelectric properties of CIGS thin films prepared at a substrate temperature of 300 °C were optimal, with an efficiency of 7.1%. As the substrate temperature increased to over 300 °C, element gallium tended to evaporate from the substrate, which resulted in the variation of the Cu/(In  +  Ga) and Ga/(In  +  Ga) ratios of the films. The post-annealing process with in situ annealing temperatures of 300 °C and 400 °C was also studied. The results indicated that the post-annealing process, unlike the process of direct deposition at certain substrate temperatures, was able to avoid the element loss. At 300 °C in situ post-annealing temperature, there formed a ‘polygon grains’ Cu2-x Se phase, which disappeared when the in situ post-annealing temperature rose to 400 °C. The XRD patterns revealed that the post-annealing process made the element diffusion in films more uniform. The post-treated sample with an in situ post-annealing temperature at 400 °C, as a result, showed the highest efficiency of 9.0%, accompanied by the highest open-circuit voltage, short circuit current and fill factor.

  19. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    SciTech Connect

    Mesquita, Anderson Fuzer; Porto, Arilza de Oliveira; Magela de Lima, Geraldo; Paniago, Roberto; Ardisson, José Domingos

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Synthesis of cadmium and tin telluride. ► Chemical route to obtain pure crystalline cadmium and tin telluride. ► Effect of the annealing temperature on the crystalline phases. ► Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

  20. The influence of annealing temperature on the interface and photovoltaic properties of CdS/CdSe quantum dots sensitized ZnO nanorods solar cells.

    PubMed

    Qiu, Xiaofeng; Chen, Ling; Gong, Haibo; Zhu, Min; Han, Jun; Zi, Min; Yang, Xiaopeng; Ji, Changjian; Cao, Bingqiang

    2014-09-15

    Arrays of ZnO/CdS/CdSe core/shell nanocables with different annealing temperatures have been investigated for CdS/CdSe quantum dots sensitized solar cells (QDSSCs). CdS/CdSe quantum dots were synthesized on the surface of ZnO nanorods that serve as the scaffold via a simple ion-exchange approach. The uniform microstructure was verified by scanning electron microscope and transmission electron microscope. UV-Visible absorption spectrum and Raman spectroscopy analysis indicated noticeable influence of annealing temperature on the interface structural and optical properties of the CdS/CdSe layers. Particularly, the relationship between annealing temperatures and photovoltaic performance of the corresponding QDSSCs was investigated employing photovoltaic conversion, quantum efficiency and electrochemical impedance spectra. It is demonstrated that higher cell efficiency can be obtained by optimizing the annealing temperature through extending the photoresponse range and improving QD layer crystal quality.

  1. Effect of the ion-beam bombardment and annealing temperature on sol-gel derived yttrium aluminum oxide film as liquid crystal alignment layer

    NASA Astrophysics Data System (ADS)

    Jeong, Hae-Chang; Heo, Gi-Seok; Kim, Eun-Mi; Lee, Ju Hwan; Han, Jeong-Min; Seo, Dae-Shik

    2017-02-01

    We demonstrated a homogeneous liquid-crystal (LC) alignment state on yttrium aluminum oxide (YAlO) films, where the alignment was induced by ion-beam (IB) irradiation. Topographical analysis was performed by atomic force microscopy as a function of annealing temperature. Higher annealing temperatures yielded a smoother surface, accompanied by reduced light scattering. Transparency in the visible region increased on the surface fabricated at higher annealing temperatures. LC alignment mechanism was determined by X-ray diffraction (XRD) analysis. Moreover, IB-irradiated YAlO films annealed at temperatures greater than 200 °C exhibited good thermal stability and low capacitance-voltage hysteresis. The IB-irradiated YAlO films are suitable as alternative alignment layers in advanced LC display applications.

  2. Retrieving the ground state of spin glasses using thermal noise: Performance of quantum annealing at finite temperatures.

    PubMed

    Nishimura, Kohji; Nishimori, Hidetoshi; Ochoa, Andrew J; Katzgraber, Helmut G

    2016-09-01

    We study the problem to infer the ground state of a spin-glass Hamiltonian using data from another Hamiltonian with interactions disturbed by noise from the original Hamiltonian, motivated by the ground-state inference in quantum annealing on a noisy device. It is shown that the average Hamming distance between the inferred spin configuration and the true ground state is minimized when the temperature of the noisy system is kept at a finite value, and not at zero temperature. We present a spin-glass generalization of a well-established result that the ground state of a purely ferromagnetic Hamiltonian is best inferred at a finite temperature in the sense of smallest Hamming distance when the original ferromagnetic interactions are disturbed by noise. We use the numerical transfer-matrix method to establish the existence of an optimal finite temperature in one- and two-dimensional systems. Our numerical results are supported by mean-field calculations, which give an explicit expression of the optimal temperature to infer the spin-glass ground state as a function of variances of the distributions of the original interactions and the noise. The mean-field prediction is in qualitative agreement with numerical data. Implications on postprocessing of quantum annealing on a noisy device are discussed.

  3. Retrieving the ground state of spin glasses using thermal noise: Performance of quantum annealing at finite temperatures

    NASA Astrophysics Data System (ADS)

    Nishimura, Kohji; Nishimori, Hidetoshi; Ochoa, Andrew J.; Katzgraber, Helmut G.

    2016-09-01

    We study the problem to infer the ground state of a spin-glass Hamiltonian using data from another Hamiltonian with interactions disturbed by noise from the original Hamiltonian, motivated by the ground-state inference in quantum annealing on a noisy device. It is shown that the average Hamming distance between the inferred spin configuration and the true ground state is minimized when the temperature of the noisy system is kept at a finite value, and not at zero temperature. We present a spin-glass generalization of a well-established result that the ground state of a purely ferromagnetic Hamiltonian is best inferred at a finite temperature in the sense of smallest Hamming distance when the original ferromagnetic interactions are disturbed by noise. We use the numerical transfer-matrix method to establish the existence of an optimal finite temperature in one- and two-dimensional systems. Our numerical results are supported by mean-field calculations, which give an explicit expression of the optimal temperature to infer the spin-glass ground state as a function of variances of the distributions of the original interactions and the noise. The mean-field prediction is in qualitative agreement with numerical data. Implications on postprocessing of quantum annealing on a noisy device are discussed.

  4. Microstructural evolution during ultra-rapid annealing of severely deformed low-carbon steel: strain, temperature, and heating rate effects

    NASA Astrophysics Data System (ADS)

    Mostafaei, M. A.; Kazeminezhad, M.

    2016-07-01

    An interaction between ferrite recrystallization and austenite transformation in low-carbon steel occurs when recrystallization is delayed until the intercritical temperature range by employing high heating rate. The kinetics of recrystallization and transformation is affected by high heating rate and such an interaction. In this study, different levels of strain are applied to low-carbon steel using a severe plastic deformation method. Then, ultra-rapid annealing is performed at different heating rates of 200-1100°C/s and peak temperatures of near critical temperature. Five regimes are proposed to investigate the effects of heating rate, strain, and temperature on the interaction between recrystallization and transformation. The microstructural evolution of severely deformed low-carbon steel after ultra-rapid annealing is investigated based on the proposed regimes. Regarding the intensity and start temperature of the interaction, different microstructures consisting of ferrite and pearlite/martensite are formed. It is found that when the interaction is strong, the microstructure is refined because of the high kinetics of transformation and recrystallization. Moreover, strain shifts an interaction zone to a relatively higher heating rate. Therefore, severely deformed steel should be heated at relatively higher heating rates for it to undergo a strong interaction.

  5. Comparison between the low temperature thermoluminescence spectra in annealed LiF:Mg,Cu, LiF:Mg,Cu,P and LiF:Mg,Cu,Si

    NASA Astrophysics Data System (ADS)

    Yang, B.; Wang, L.; Townsend, P. D.; Gao, H.

    2008-06-01

    Two strong thermal peaks in the wavelength range 220-420 nm have been detected at 128 and 140 K in LiF:Mg,Cu, at 123 and 135 K in LiF:Mg,Cu,P and at 125 and 133 K in LiF:Mg,Cu,Si, respectively. The origin of these main TL peaks is discussed in terms of defect perturbed H-F and VK-e type recombination, respectively. The relative intensity between the two peaks in each sample and the emission spectra are dependent on the dopants. Annealing at 240-390 °C can modify the low temperature TL features, especially in those samples doped with three impurities. The low temperature data give some clues to select most favourable dopants for future LiF-type dosimeters.

  6. Temperature dependent phonon properties of thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Hellman, Olle; Broido, David; Fultz, Brent

    2015-03-01

    We present recent developments using the temperature dependent effective potential technique (TDEP) to model thermoelectric materials. We use ab initio molecular dynamics to generate an effective Hamiltonian that reproduce neutron scattering spectra, thermal conductivity, phonon self energies, and heat capacities. Results are presented for (among others) SnSe, Bi2Te3, and Cu2Se proving the necessity of careful modelling of finite temperature properties for strongly anharmonic materials. Supported by the Swedish Research Council (VR) Project Number 637-2013-7296.

  7. The Mechanical Properties of the Mo-0.5Ti and Mo-0.1Zr Alloys at Room Temperature and High Temperature Annealing

    NASA Astrophysics Data System (ADS)

    Cui, Chaopeng; Gao, Yimin; Wei, Shizhong; Zhang, Guoshang; Zhou, Yucheng; Pan, Kunming; Zhu, Xiangwei; Guo, Songliang

    2017-02-01

    Mo-0.5Ti and Mo-0.1Zr alloys were prepared by powder metallurgy. In Mo-0.5Ti and Mo-0.1Zr alloys, there appears the second-phase particles of Ti2O3 and ZrO2 respectively, each of which can effectively prevent the dislocation activity in the process of plastic deformation. The addition of Zr can increase the strength of molybdenum alloys. Meanwhile, the ZrO2 formed from the alloy element Zr can refine the grains of molybdenum alloys to improve the recrystallization plasticity. After annealing, the tensile strength decreases while the plasticity greatly increases compared to the annealed Mo-0.5Ti and Mo-0.1Zr alloys. With the increase of annealing temperature, both the tensile strength and plasticity of Mo-0.5Ti and Mo-0.1Zr alloys decrease. Compared with pure Mo, after annealing the properties of the Mo-0.5Ti alloy and the plasticity of the Mo-0.1Zr alloy significantly increases.

  8. Impacts of thermal annealing temperature on memory properties of charge trapping memory with NiO nano-pillars

    NASA Astrophysics Data System (ADS)

    Yan, Xiaobing; Yang, Tao; Jia, Xinlei; Zhao, Jianhui; Zhou, Zhenyu

    2017-03-01

    In this work, Au/SiO2/NiO/SiO2/Si structure charge trapping memory using NiO as the charge trapping layer was fabricated, and the impacts of the annealing temperature on the charge trapping memory performance were investigated in detail. The sample thermal annealed at 750 °C indicated a large memory window of 2.07 V under a low sweeping voltage of ± 5 V, which also has excellent charge retention properties with only small charge loss of ∼4.9% after more than 104 s retention. The high resolved transmission electron microscopy shows that the NiO films grew as nano-pillars structure. It is proposed that the excellent memory characteristics of the device are attributed to the inherent atomic defects and oxygen vacancies accumulated by the grain boundaries around NiO nano-pillars. Meanwhile the interface inter-diffusion formed by thermal annealing process is also an indispensable factor for the excellent memory characteristics of the device.

  9. Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

    SciTech Connect

    Andreev, B. A.; Sobolev, N. A. Denisov, D. V.; Shek, E. I.

    2013-10-15

    The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of 500 Degree-Sign C are studied at 4.2 K on being annealed at 800-900 Degree-Sign C. Three sets of lines belonging to the emitting centers of erbium in silicon with a low oxygen-impurity concentration are revealed.

  10. Strong, Twist-Stable Carbon Nanotube Yarns and Muscles by Tension Annealing at Extreme Temperatures.

    PubMed

    Di, Jiangtao; Fang, Shaoli; Moura, Francisco A; Galvão, Douglas S; Bykova, Julia; Aliev, Ali; de Andrade, Mônica Jung; Lepró, Xavier; Li, Na; Haines, Carter; Ovalle-Robles, Raquel; Qian, Dong; Baughman, Ray H

    2016-08-01

    A high-speed incandescent tension annealing process (ITAP) is used to increase the modulus and strength of twist-spun carbon nanotube yarns by up to 12-fold and 2.6-fold, respectively, provide remarkable resistance to oxidation and powerful protonating acids, and freeze yarn untwist. This twist stability enables torsional artificial-muscle motors having improved performance and minimizes problematic untwist during weaving nanotube yarns.

  11. Temperature-dependent reflectivity of silicon carbide

    NASA Technical Reports Server (NTRS)

    Ng, Daniel

    1992-01-01

    The spectral reflectivity of a commercial silicon carbide (SiC) ceramic surface was measured at wavelengths from 2.5 to 14.5 microns and at temperatures ranging from 358 to 520 K using a NASA-developed multiwavelength pyrometer. The SiC surface reflectivity was low at the short wavelengths, decreasing to almost zero at 10 microns, then increasing rapidly to a maximum at approximately 12.5 microns, and decreasing gradually thereafter. The reflectivity maximum increased in magnitude with increasing surface temperature. The wavelength and temperature dependence can be explained in terms of the classical dispersion theory of crystals and the Lorentz electron theory. Electronic transitions between the donor state and the conduction band states were responsible for the dispersion. The concentration of the donor state in SiC was determined to be approximately 4 x 10 exp 18 and its ionization energy was determined to be approximately 71 meV.

  12. Effects of storage temperatures and annealing conditions on the structure and properties of potato (Solanum tuberosum) starch.

    PubMed

    Tester, R F; Ansell, R; Snape, C E; Yusuph, M

    2005-07-01

    Starches were extracted from freshly harvested potatoes (12 cultivars, grown in Perthshire) and the properties of the starches of six cultivars were compared with starches extracted from the same samples but stored at 5, 25 or 55 degrees C for 7 days before extraction. The amylose (total) content of the freshly extracted starches from tubers stored at 5, 25 or 55 degrees C was on average 27.9+/-2.3, 28.3+/-1.7, 29.2+/-2.2 and 28.8+/-1.5%, respectively, with corresponding phosphorus representing 60+/-16, 64+/-9, 61+/-5 and 63+/-9 mg 100 g(-1). The unit chain distribution by chromatography of the amylopectin molecules from the starches extracted from the different conditions was very similar with an average degree of polymerisation (DP) of 26+/-2 where the two major fractions (F1 and F2) represented 54+/-2 and 19+/-1, respectively. Peak gelatinisation temperatures (Tp) and enthalpies (DeltaH) for the freshly extracted starches and from tubers stored at 5 or 25 degrees C were very similar (63.3+/-1.5 degrees C and 18.6+/-0.8 J g(-1); 63.1+/-1.0 degrees C and 17.7+/-1.5 J g(-1) and; 62.9+/-0.7 degrees C and 18.7+/-1.1 J g(-1), respectively) although starches stored at 55 degrees C were annealed, where Tp represented 71.1+/-1.1 degrees C and DeltaH 18.1+/-1.4 J g(-1). These in situ-annealed starches were comparable in terms of gelatinisation characteristics to annealed freshly extracted starches where on average, T(p) represented 72.7+/-1.0 degrees C and DeltaH 20.8+/-1.0 J g(-1). Annealing of tubers in situ prior to processing might be beneficial with respect to developing new potato-based products.

  13. Effect of annealing temperature on optical and electrical properties of ZrO2-SnO2 based nanocomposite thin films

    NASA Astrophysics Data System (ADS)

    Anitha, V. S.; Lekshmy, S. Sujatha; Berlin, I. John; Joy, K.

    2014-01-01

    Transparent nanocomposite ZrO2-SnO2 thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO2-SnO2 films can be used in many applications and in optoelectronic devices.

  14. Corrosion inhibition of stainless steel type AISI 304 by Mn coating and subsequent annealing with flow of nitrogen at different temperatures

    NASA Astrophysics Data System (ADS)

    Grayeli-Korpi, Ali-Reza; Savaloni, Hadi; Habibi, Maryam

    2013-07-01

    This work reports the enhancement of stainless steel corrosion resistance coated with Mn and post-annealed with flow of nitrogen at different annealing temperatures. Crystallographic variation of the samples by annealing temperature is studied by X-ray diffraction (XRD) while their surface morphology and surface roughness was obtained by means of atomic force microscope (AFM) and scanning electron microscope (SEM) analyses before and after corrosion test respectively. Elemental analysis of samples after corrosion test was investigated by energy dispersive spectroscope (EDS) analysis. The corrosion behaviour of the samples was evaluated by potentiodynamic polarization test in 0.6 M NaCl solution. A critical annealing temperature is found at which the highest corrosion resistance can be achieved. Correlation between corrosion resistance, structural and surface morphology results is obtained.

  15. Comparative study of the performance of quantum annealing and simulated annealing.

    PubMed

    Nishimori, Hidetoshi; Tsuda, Junichi; Knysh, Sergey

    2015-01-01

    Relations of simulated annealing and quantum annealing are studied by a mapping from the transition matrix of classical Markovian dynamics of the Ising model to a quantum Hamiltonian and vice versa. It is shown that these two operators, the transition matrix and the Hamiltonian, share the eigenvalue spectrum. Thus, if simulated annealing with slow temperature change does not encounter a difficulty caused by an exponentially long relaxation time at a first-order phase transition, the same is true for the corresponding process of quantum annealing in the adiabatic limit. One of the important differences between the classical-to-quantum mapping and the converse quantum-to-classical mapping is that the Markovian dynamics of a short-range Ising model is mapped to a short-range quantum system, but the converse mapping from a short-range quantum system to a classical one results in long-range interactions. This leads to a difference in efficiencies that simulated annealing can be efficiently simulated by quantum annealing but the converse is not necessarily true. We conclude that quantum annealing is easier to implement and is more flexible than simulated annealing. We also point out that the present mapping can be extended to accommodate explicit time dependence of temperature, which is used to justify the quantum-mechanical analysis of simulated annealing by Somma, Batista, and Ortiz. Additionally, an alternative method to solve the nonequilibrium dynamics of the one-dimensional Ising model is provided through the classical-to-quantum mapping.

  16. Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

    PubMed

    Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

    2014-10-14

    Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

  17. Temperature dependence of hole growth kinetics in aluminum-phthalocyanine-tetrasulfonate in hyperquenched glassy water.

    PubMed

    Dang, N C; Reinot, T; Reppert, M; Jankowiak, R

    2007-02-22

    The temperature (T) dependence of hole growth kinetics (HGK) data that span more than four decades of burn fluence are reported for aluminum-phthalocyanine tetrasulfonate (APT) in fresh and annealed hyperquenched glassy water (HGW) for temperatures between 5 and 20 K. The highly dispersive HGK data are modeled by using the "master" equation based on the two level system (TLS) model described in 2000 by Reinot and Small [J. Chem. Phys. 2000, 113, 10207]. We have demonstrated that thermal line broadening is not enough to account for temperature-dependent HGK for temperatures greater than 10 K. To overcome the discrepancy, the hole growth model must account for thermal hole filling (THF) processes. For the first time, the "master" equation used for HGK simulations is modified to take into account both the temperature dependence of the (single site) absorption spectrum and THF processes, effectively turning off those TLS which do not participate in the hole burning process at higher temperatures. A single set of parameters, some of which were determined directly from the hole spectra, was found to provide satisfactory fits to the HGK data for APT in fresh and annealed HGW for holes burned in the 679.7-676.9 nm range from the high to low energy sides of the Qx absorption band. Furthermore, we propose that HGK modeling at high burn fluences requires that the TLS model be further modified to take into account the existence of extrinsic multiple level systems.

  18. Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H)

    SciTech Connect

    Fleming, R. M.; Myers, S. M.

    2006-08-15

    Deuterated p-type GaN(Mg,{sup 2}H) films were irradiated at room temperature with 1 MeV protons to create native point defects with a concentration approximately equal to the Mg doping (5x10{sup 19} cm{sup -3}). The samples were then annealed isothermally at a succession of temperatures while monitoring the infrared absorption due to the H local mode of the MgH defect. As the samples were annealed, the MgH absorption signal decreased and a new mode at slightly higher frequency appeared, which has been associated with the approach of a mobile nitrogen interstitial. We used the time dependence of the MgH absorption to obtain a diffusion barrier of the nitrogen interstitial in p-type GaN of 1.99 eV. This is in good agreement with theoretical calculations of nitrogen interstitial motion in GaN.

  19. Temperature dependent light transmission in ferrofluids

    NASA Astrophysics Data System (ADS)

    Brojabasi, Surajit; Mahendran, V.; Lahiri, B. B.; Philip, John

    2015-05-01

    We investigate the influence of temperature on the magnetic field induced light transmission in a kerosene based ferrofluid containing oleic acid coated Fe3O4 nanoparticles, where the direction of propagation of light is parallel to the direction of the external magnetic field. At a fixed temperature the transmitted light intensity is found to monotonically increase with incident wavelength due to reduced extinction efficiency at higher wavelength. The transmitted intensity decreases with external magnetic field due to enhanced scattering from the field induced linear chain like structures along the direction of the external magnetic field and due to the build-up of standing waves inside the scattering medium. The extinction of the field induced transmitted light intensity is found to occur at a lower external field as the sample temperature is lowered. The rate of extinction of normalized transmitted light intensity decreased linearly with increasing sample temperature due to slower field induced aggregation kinetics because of an increased Brownian motion of the suspended nanoparticles and a reduced coupling constant. The observed temperature dependent magneto-optical properties of magnetic nanofluids can be exploited for applications in optical devices.

  20. A theoretical framework to obtain interface's shapes during the high-temperature annealing of high-aspect-ratio gratings

    NASA Astrophysics Data System (ADS)

    Castez, Marcos F.; Salvarezza, Roberto C.; Nakamura, Jun; Sudoh, Koichi

    2010-09-01

    High-temperature annealing applied to solid samples produces important morphological modifications on their surfaces, particularly in high-aspect-ratio gratings. We show, how by means of a framework based in a nonlinear analysis of the Mullins' equation [J. Appl. Phys. 28, 333 (1957)], we can mathematically reproduce surface's shapes just by measuring a few characteristic features of the interfaces (essentially pattern's amplitudes and wavelengths). We compared our results with experimental data on silicon samples, finding a close agreement between experimental shapes and those theoretically predicted. The introduced framework could be particularly useful in those situations where no cross-sectional information were available.

  1. Flow rate distribution and effect of convection and radiation heat transfer on the temperature profile during a coil annealing process

    NASA Astrophysics Data System (ADS)

    Haouam, A.; Bigerelle, M.

    2015-02-01

    Determining the temperature of several steel coils, heated in a furnace with a controlled hydrogen environment is important in an annealing process. Temperatures must be defined during heat treatment in order to guarantee metallurgical properties and acceptable reduced residual stresses. In this paper we approach hydrogen flow characteristics in the furnace and through a set of coils using an annealing non-differential model. Fluid flow is schematized as a pipe network solved by the Hardy Cross method to obtain pressure drops across the various gas flow segments. A comparison is made between measured and simulated results, confirming the adequacy of adopted assumptions and the validity of proposed model. Convective and radiative exchanges between the furnace and the coils are calculated by a discretization using the finite differences method. The convection coefficients are estimated and introduced into the boundary conditions around the coil to obtain the temperature distribution in the coils and in the covering bell. Finally, heat exchanges by convection and radiation are estimated by this model and the modeling errors are <8 °C.

  2. Study of electric susceptibility, electrical resistivity and energy loss functions of carbon-nickel composite films at different annealing temperatures

    NASA Astrophysics Data System (ADS)

    Dalouji, V.; Elahi, S. M.; Saadi Alecasir, M.

    2015-11-01

    In this work, the optical and electrical properties of carbon-nickel films annealed at different temperatures (300-1000 °C) were investigated. The obtained data of the refractive index n using the Swanepoel’s method can be analyzed to obtain the high-frequency dielectric constant which describes the free carriers and the lattice vibration modes of dispersion. The lattice dielectric constant ɛL and the plasma frequency ωp at 500 °C have maximum values 4.95 and 40.02 × 106 Hz, respectively. The free carrier electric susceptibility measurements in wavelength range (300-1000 nm) are discussed according to the Spitzer-Fan model. It is shown that the electric susceptibility at 500 °C has maximum value and with increasing wavelength it increases. It is also shown that the waste of electrical energy as heat at 500 °C has maximum value and with increasing wavelength it increases. It is found that energy loss by the free charge carriers when traversing the bulk and surface of films at 800 °C has a minimum value and it is approximately constant with wavelength. It is shown that optical properties were consistent with electrical properties of films annealed at different temperatures in temperature range (15-500 K).

  3. Effect of annealing temperature and pH on morphology and optical property of highly dispersible ZnO nanoparticles

    SciTech Connect

    Uthirakumar, Periyayya; Hong, Chang-Hee

    2009-11-15

    Highly dispersible zinc oxide nanoparticles were produced in large quantity via a simple solution method. The effect of temperature and pH impact on as-prepared ZnO nanoparticles with respect to the morphological and optical characteristics has been investigated. The average particle size of ZnO nanoparticles increased with increasing annealing temperature. A sharp UV band-edge emission was observed in as-prepared ZnO nanoparticles with negligibly less intense deep level emission. However, upon annealing at high temperature in air, UV band-edge emission disappears with an evolution of a broad deep level emission in photoluminescence spectra. Similarly, by adjusting the pH of reaction medium from 4 to pH = 8 using ammonium hydroxide solution, particle size gets bigger and bigger leads to red-shift in UV band-edge emission and an appearance of deep level emission peak. At pH = 8, well resolved sharp X-ray diffraction peaks were observed with lower FWHM values due to higher crystallite sizes.

  4. Effects of annealing temperature on structure and magnetic properties of CoAl0.2Fe1.8O4/SiO2 nanocomposites

    NASA Astrophysics Data System (ADS)

    Wang, L.; Li, J.; Liu, M.; Zhang, Y. M.; Lu, J. B.; Li, H. B.

    2012-12-01

    CoAl0.2Fe1.8O4/SiO2 nanocomposites were prepared by sol-gel method. The effects of annealing temperature on the structure and magnetic properties of the samples were studied by X-ray diffraction, transmission electron microscopy, vibrating sample magnetometer and Mössbauer spectroscopy. The results show that the CoAl0.2Fe1.8O4 in the samples exhibits a spinel structure after being annealed. As annealing temperature increases from 800 to 1200 °C, the average grain size of CoAl0.2Fe1.8O4 in the nanocomposites increases from 5 to 41 nm while the lattice constant decreases from 0.8397 to 0.8391 nm, the saturation magnetization increases from 21.96 to 41.53 emu/g. Coercivity reaches a maximum of 1082 Oe for the sample annealed at 1100 °C, and thereafter decreases with further increasing annealing temperature. Mössbauer spectra show that the isomer shift decreases, hyperfine field increases and the samples transfer from mixed state of superparamagnetic and magnetic order to the completely magnetic order with annealing temperature increasing from 800 to 1200 °C.

  5. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

    PubMed

    Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

  6. Viviparity and temperature-dependent sex determination.

    PubMed

    Robert, K A; Thompson, M B

    2010-01-01

    Although temperature-dependent sex determination (TSD) has been a 'hot topic' for well over 30 years, the discovery of TSD in viviparous taxa is recent. Viviparity and TSD was regarded unlikely on theoretical grounds as viviparity allows for high stable developmental temperatures through maternal basking. However, pregnant squamates of many species choose different body temperatures from non-pregnant females and males, and we now know that differential temperature selection by viviparous species with TSD allows for the production of sons or daughters. Three species of squamate reptiles (all are skinks) are now know to exhibit TSD. The physiological mechanism by which viviparous reptiles control the sex of their offspring is not understood, but exposure to different operational sex ratios in the adult population is a factor in some species. The functional role of sex steroid hormones in egg yolk and how the hormones are manipulated in utero is still an area requiring detailed investigation. Fast maturing squamate reptiles provide an excellent, but as yet underutilized, model system for studying the adaptive significance of TSD, and the occurrence of TSD in viviparous species requires substantially more work on a phylogenetically diverse range of species.

  7. Temperature dependent spin structures in Hexaferrite crystal

    NASA Astrophysics Data System (ADS)

    Chao, Y. C.; Lin, J. G.; Chun, S. H.; Kim, K. H.

    2016-01-01

    In this work, the Hexaferrite Ba0.5Sr1.5Zn2Fe12O22 (BSZFO) is studied due to its interesting characteristics of long-wavelength spin structure. Ferromagnetic resonance (FMR) is used to probe the magnetic states of BSZFO single crystal and its temperature dependence behavior is analyzed by decomposing the multiple lines of FMR spectra into various phases. Distinguished phase transition is observed at 110 K for one line, which is assigned to the ferro(ferri)-magnetic transition from non-collinear to collinear spin state.

  8. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  9. Effects of low-temperature annealing on the microstructure and grain boundary chemistry of irradiated type 304SS and correlations with IASCC resistance

    SciTech Connect

    Jacobs, A.J.; Dumbill, S.

    1995-12-31

    Low-temperature annealing (LTA) is a known technique for mitigating irradiation-assisted stress corrosion cracking (IASCC) in laboratory stress corrosion cracking tests. A combined transmission electron microscope (TEM)/scanning transmission electron microscope (STEM) study was undertaken to determine the microstructural and/or grain boundary compositional differences between an IASCC-resistant material, which had been mill-annealed, then irradiated and subjected to a low-temperature anneal; and an IASCC-susceptible material, which had been mill-annealed and irradiated only. The material used was commercial-purity Type 304SS from a control blade sheath. Stress corrosion resistance was measured in constant extension rate tensile (CERT) and constant deflection tests in a hot cell. Attempts were made to correlate microhardness data obtained from tested constant deflection specimens with dislocation density measured in the TEM and with IASCC resistance. Phosphorus and silicon segregation and chromium depletion are reported as a function of heat treatment and IASCC resistance.

  10. Effects of Phosphorous-doping and High Temperature Annealing on CVD grown 3C-SiC

    SciTech Connect

    I. J. van Rooyen; J. H. Neethling; A. Henry; E. Janzen; S. M. Mokoduwe; A. Janse van Vuuren; E. Olivier

    2012-10-01

    The integrity and property behavior of the SiC layer of the Tri-isotropic (TRISO) coated particle (CP) for high temperature reactors (HTR) are very important as the SiC layer is the main barrier for gaseous and metallic fission product release. This study describes the work done on un-irradiated SiC samples prepared with varying phosphorus levels to simulate the presence of phosphorus due to transmutation. 30Si transmutes to phosphorous (31P) and other transmutation products during irradiation, which may affect the integrity of the SiC layer. The P-doping levels of the SiC samples used in this study cover the range from 1.1x1015 to 1.2x1019 at/cm3 and are therefore relevant to the PBMR operating conditions. Annealing from 1000 C to 2100 C was performed to study the possible changes in nanostructures and various properties due to temperature. Characterization results by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM), are reported in this article. As grain boundary diffusion is identified as a possible mechanism by which 110mAg, one of the fission activation products, might be released through intact SiC layer, grain size measurements is also included in this study. Temperature is evidently one of the factors/parameters amongst others known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. The ASTM E112 method as well as electron back scatter diffraction (EBSD) was used to determine the grain size of various commercial SiC samples and the SiC layer in experimental PBMR Coated Particles (CPs) after annealing at temperatures ranging from 1600 C to 2100 C. The HRTEM micrograph of the decomposition of SiC at 2100 C are shown and discussed. Nanotubes were not identified during the TEM and HRTEM analysis although graphitic

  11. Phase separation in SiGe nanocrystals embedded in SiO{sub 2} matrix during high temperature annealing

    SciTech Connect

    Mogaddam, N. A. P.; Turan, R.; Alagoz, A. S.; Yerci, S.; Foss, S.; Finstad, T. G.

    2008-12-15

    SiGe nanocrystals have been formed in SiO{sub 2} matrix by cosputtering Si, Ge, and SiO{sub 2} independently on Si substrate. Effects of the annealing time and temperature on structural and compositional properties are studied by transmission electron microscopy, x-ray diffraction (XRD), and Raman spectroscopy measurements. It is observed that Ge-rich Si{sub (1-x)}Ge{sub x} nanocrystals do not hold their compositional uniformity when annealed at high temperatures for enough long time. A segregation process leading to separation of Ge and Si atoms from each other takes place. This process has been evidenced by a double peak formation in the XRD and Raman spectra. We attributed this phase separation to the differences in atomic size, surface energy, and surface diffusion disparity between Si and Ge atoms leading to the formation of nonhomogenous structure consist of a Si-rich SiGe core covered by a Ge-rich SiGe shell. This experimental observation is consistent with the result of reported theoretical and simulation methods.

  12. Temperature dependence of the Casimir force

    NASA Astrophysics Data System (ADS)

    Brevik, Iver; Høye, Johan S.

    2014-01-01

    The Casimir force—at first, a rather unexpected consequence of quantum electrodynamics—was discovered by Hendrik Casimir in Eindhoven in 1948. It predicts that two uncharged metal plates experience an attractive force because of the zero-point fluctuations of the electromagnetic field. The idea was tested experimentally in the 1950s and 1960s, but the results were not so accurate that one could make a definite conclusion regarding the existence of the effect. Evgeny Lifshitz expanded the theory in 1955 so as to deal with general dielectric media. Much experimental work was later done to test the theory’s predictions, especially with regards to the temperature dependence of the effect. The existence of the effect itself was verified beyond doubt by Sabisky and Anderson in 1973. Another quarter century had to pass before Lamoreaux and collaborators were able to confirm—or at least make plausible—the temperature dependence predicted by Lifshitz formula in combination with reasonable input data for the material’s dispersive properties. The situation is not yet clear-cut, however, there are recent experiments indicating results in disagreement with those of Lamoreaux. In this paper, a brief review is given of the status of this research field.

  13. The growth of ubiquitous ZnO rods on PMMA-coated substrate by solution-immersion method at different annealing temperatures

    NASA Astrophysics Data System (ADS)

    Aadila, A.; Asib, N. A. M.; Afaah, A. N.; Husairi, F. S.; Mohamed, R.; Rusop, M.; Khusaimi, Z.

    2016-07-01

    In this work, solution-immersion method was used to grow ZnO rods on PMMA-coated substrate. For this purpose, 0.15 M of zinc nitrate hexahydrate (Zn(NO3)2.6H2O) and hexamethylenetetramine (C6H12N4) were used to growth of ZnO films at different annealing temperatures (room temperature, 80, 100, 120 and 140 °C). The morphology of the films was investigated by Scanning Electron Microscope (SEM) and optical properties were studied by Ultraviolet (UV-Vis) Spectroscopy. SEM analysis showed ubiquitous growth of ZnO rods that became better aligned and more closely-packed as the annealing temperature increased. As the annealing temperature exceeds 100 °C, the rods tend to merge to adjacent particles and the UV absorption decreased for the sample at higher temperatures (120 °C and 140 °C). Good absorption and better orientation of ZnO was obtained for the sample annealed at 100 °C due to the film possess better distribution and these improved orientation of particles caused the light to be effectively scattered on the sample. Both surface morphology and UV was significantly affected by the change in annealing temperatures thus thermal effect played a dominant role in shaping and improving the orientation of ZnO rods on PMMA-coated and its UV absorption.

  14. Escherichia coli survival in waters: temperature dependence.

    PubMed

    Blaustein, R A; Pachepsky, Y; Hill, R L; Shelton, D R; Whelan, G

    2013-02-01

    Knowing the survival rates of water-borne Escherichia coli is important in evaluating microbial contamination and making appropriate management decisions. E. coli survival rates are dependent on temperature, a dependency that is routinely expressed using an analogue of the Q₁₀ model. This suggestion was made 34 years ago based on 20 survival curves taken from published literature, but has not been revisited since then. The objective of this study was to re-evaluate the accuracy of the Q₁₀ equation, utilizing data accumulated since 1978. We assembled a database of 450 E. coli survival datasets from 70 peer-reviewed papers. We then focused on the 170 curves taken from experiments that were performed in the laboratory under dark conditions to exclude the effects of sunlight and other field factors that could cause additional variability in results. All datasets were tabulated dependencies "log concentration vs. time." There were three major patterns of inactivation: about half of the datasets had a section of fast log-linear inactivation followed by a section of slow log-linear inactivation; about a quarter of the datasets had a lag period followed by log-linear inactivation; and the remaining quarter were approximately linear throughout. First-order inactivation rate constants were calculated from the linear sections of all survival curves and the data grouped by water sources, including waters of agricultural origin, pristine water sources, groundwater and wells, lakes and reservoirs, rivers and streams, estuaries and seawater, and wastewater. Dependency of E. coli inactivation rates on temperature varied among the water sources. There was a significant difference in inactivation rate values at the reference temperature between rivers and agricultural waters, wastewaters and agricultural waters, rivers and lakes, and wastewater and lakes. At specific sites, the Q₁₀ equation was more accurate in rivers and coastal waters than in lakes making the value of

  15. Selective synthesis of boron nitride nanotubes by self-propagation high-temperature synthesis and annealing process

    NASA Astrophysics Data System (ADS)

    Wang, Jilin; Zhang, Laiping; Zhao, Guowei; Gu, Yunle; Zhang, Zhanhui; Zhang, Fang; Wang, Weimin

    2011-09-01

    Four types of BN nanotubes are selectively synthesized by annealing porous precursor in flowing NH 3 and NH 3/H 2 atmosphere at temperature ranging from 1000 to 1200 °C in a vertical furnace. The as-synthesized BN nanotubes, including cylinder, wave-like, bamboo-like and bubble-chain, are characterized by XRD, FTIR, Raman, SEM, TEM and HRTEM. Three phenomenological growth models are proposed to interpret growth scenario and structure features of the four types of BN nanotubes. Selectivity of nanotubes formation is estimated as approximately 80-95%. The precursor containing B, Mg, Fe and O prepared by self-propagation high-temperature synthesis (SHS) method plays a key role in selective synthesis of the as-synthesized BN nanotubes. Chemical reactions are also discussed.

  16. Lamellar orientation in thin films of symmetric semicrytalline polystyrene-b-poly(ethylene-co-butene) block copolymers: effects of molar mass, temperature of solvent evaporation, and annealing.

    PubMed

    Liang, Guo-Dong; Xu, Jun-Ting; Fan, Zhi-Qiang

    2007-10-18

    Orientation of the lamellar microdomains in thin films of three symmetric polystyrene-b-poly(ethylene-co-butylene) block copolymers (S65E155, S156E358, and S199E452) on mica was investigated via atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD) and X-ray photoelectron spectroscopy (XPS). The results show that lamellar orientation in the SxEy block copolymers greatly depends on the molar mass of the block copolymers, the temperature of solvent evaporation, and annealing. The nascent thin film of the low molar mass block copolymer, S65E155, shows a multilayered structure parallel to the mica surface with the PS block at both polymer/mica and polymer/air interfaces, but the high molar mass block copolymers, S156E358 and S199E452, exhibit a structure with lamellar microdomains perpendicular to the mica surface. When the solvent is evaporated at a lower temperature, the crystallization rate is fast and a two-dimensional spherulite structure with the lamellar microdomains perpendicular to the mica surface is observed. Annealing of all the thin films with lamellar microdomains perpendicular to the mica surface leads to morphological transformation into a multilayered structure parallel to the mica surface. In all SxEy thin films on mica, the stems of PE crystals are always perpendicular to the interface between the lamellar PE and PS microdomains. A mechanism is proposed for the formation of different microdomain orientations in the thin films of semicrystalline block copolymers. When the thin film is prepared from a homogeneous solution, microdomains perpendicular to the substrate surface are formed rapidly for strongly segregated block copolymers or at a lower crystallization temperature and kinetically trapped by the strong segregation strength or solidification of crystallization, while for weakly segregated block copolymers or at slower crystallization rate, the orientation of the microdomains is dominated by surface selectivity.

  17. Zero-temperature quantum annealing bottlenecks in the spin-glass phase

    PubMed Central

    Knysh, Sergey

    2016-01-01

    A promising approach to solving hard binary optimization problems is quantum adiabatic annealing in a transverse magnetic field. An instantaneous ground state—initially a symmetric superposition of all possible assignments of N qubits—is closely tracked as it becomes more and more localized near the global minimum of the classical energy. Regions where the energy gap to excited states is small (for instance at the phase transition) are the algorithm's bottlenecks. Here I show how for large problems the complexity becomes dominated by O(log N) bottlenecks inside the spin-glass phase, where the gap scales as a stretched exponential. For smaller N, only the gap at the critical point is relevant, where it scales polynomially, as long as the phase transition is second order. This phenomenon is demonstrated rigorously for the two-pattern Gaussian Hopfield model. Qualitative comparison with the Sherrington-Kirkpatrick model leads to similar conclusions. PMID:27491338

  18. Zero-temperature quantum annealing bottlenecks in the spin-glass phase

    NASA Astrophysics Data System (ADS)

    Knysh, Sergey

    2016-08-01

    A promising approach to solving hard binary optimization problems is quantum adiabatic annealing in a transverse magnetic field. An instantaneous ground state--initially a symmetric superposition of all possible assignments of N qubits--is closely tracked as it becomes more and more localized near the global minimum of the classical energy. Regions where the energy gap to excited states is small (for instance at the phase transition) are the algorithm's bottlenecks. Here I show how for large problems the complexity becomes dominated by O(log N) bottlenecks inside the spin-glass phase, where the gap scales as a stretched exponential. For smaller N, only the gap at the critical point is relevant, where it scales polynomially, as long as the phase transition is second order. This phenomenon is demonstrated rigorously for the two-pattern Gaussian Hopfield model. Qualitative comparison with the Sherrington-Kirkpatrick model leads to similar conclusions.

  19. Zero-temperature quantum annealing bottlenecks in the spin-glass phase.

    PubMed

    Knysh, Sergey

    2016-08-05

    A promising approach to solving hard binary optimization problems is quantum adiabatic annealing in a transverse magnetic field. An instantaneous ground state-initially a symmetric superposition of all possible assignments of N qubits-is closely tracked as it becomes more and more localized near the global minimum of the classical energy. Regions where the energy gap to excited states is small (for instance at the phase transition) are the algorithm's bottlenecks. Here I show how for large problems the complexity becomes dominated by O(log N) bottlenecks inside the spin-glass phase, where the gap scales as a stretched exponential. For smaller N, only the gap at the critical point is relevant, where it scales polynomially, as long as the phase transition is second order. This phenomenon is demonstrated rigorously for the two-pattern Gaussian Hopfield model. Qualitative comparison with the Sherrington-Kirkpatrick model leads to similar conclusions.

  20. Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

    PubMed

    Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

    2010-03-01

    Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature.

  1. Influences of film thickness and annealing temperature on properties of sol-gel derived ZnO-SnO2 nanocomposite thin film

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Min; Joo, Young-Hee; Kim, Chang-Il

    2014-11-01

    In this study, ZnO-SnO2 nanocomposite thin film was prepared on glass substrates with different film thicknesses and annealing temperatures through a sol-gel method. From the results of thermogravimetric analysis (TGA), it was deduced that the ZnO-SnO2 thin film could be sufficiently formed at approximately 500 °C. The XRD patterns showed enhanced crystallinity of the ZnO-SnO2 thin film with increasing film thickness and annealing temperature. However, it was also revealed that the crystallinity deteriorated when the film thickness and annealing temperature are 270 nm and 700 °C, respectively. The variation in electrical resistivity corresponded to intensities of the (0 0 2) diffraction peaks shown in the XRD patterns. It was also found that the increase of film thickness and annealing temperature led to rougher surface morphology and to an increase in grain size. The optical properties deteriorated with increasing film thickness and annealing temperature of the ZnO-SnO2 thin films.

  2. [Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

    PubMed

    Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

    2014-07-01

    In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

  3. Study on interface characteristics in amorphous indium-gallium-zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

    NASA Astrophysics Data System (ADS)

    Wu, Chenfei; Huang, Xiaoming; Lu, Hai; Yu, Guang; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2015-07-01

    In this work, the interface properties of amorphous indium-gallium-zinc oxide thin film transistors annealed at different temperatures ranging from 150 to 250 °C are studied by temperature dependent mobility and low-frequency noise (LFN) characterizations. The dominant scattering mechanism for carrier transport is found to be Coulomb scattering based on gate bias and temperature dependent mobility measurement. Meanwhile, as the annealing temperature increases, the dominant mechanism of LFN within the device channel varies from carrier number fluctuation to carrier mobility fluctuation. The border trap density as well as the distribution properties of charged border traps is deduced. The present results suggest that annealing at higher temperature has a more remarkable effect on removing deeper border traps than traps closer to the channel/dielectric interface.

  4. Investigation of extended-gate field-effect transistor pH sensors based on different-temperature-annealed bi-layer MWCNTs-In2O3 films

    PubMed Central

    2014-01-01

    In this paper, indium (In) films were deposited on glass substrates using DC sputtering method. Multiwalled carbon nanotubes (MWCNTs) and dispersant were dissolved in alcohol, and the mixed solution was deposited on the In films using the spray method. The bi-layer MWCNTs-In2O3 films were annealed at different temperatures (from room temperature to 500°C) in O2 atmosphere. The influences of annealing temperature on the characteristics of the bi-layer MWCNTs-In2O3 films were investigated by scanning electron microscopy, X-ray diffraction pattern, Fourier transform infrared (FT-IR) spectroscopy, and Raman spectroscopy. A separative extended-gate field-effect transistor (EGFET) device combined with a bi-layer MWCNTs-In2O3 film was constructed as a pH sensor. The influences of different annealing temperatures on the performances of the EGFET-based pH sensors were investigated. We would show that the pH sensitivity was dependent on the thermal oxygenation temperature of the bi-layer MWCNTs-In2O3 films. PMID:25288911

  5. Deposition and characterization of high temperature superconducting YBa2Cu3O7-δ films obtained by DC magnetron sputtering and thermal annealing modification

    NASA Astrophysics Data System (ADS)

    Beshkova, M.; Blagoev, B.; Kovacheva, D.; Mladenov, G.; Nurgaliev, T.

    2008-05-01

    C-axis oriented 100-nm thick YBCO films were deposited on LaAlO3 (100) substrates at substrate temperature of 780°C in a mixed oxygen/argon atmosphere (1:3) of 0.3 Torr by DC off-axis magnetron sputtering. The samples deposited were thermally annealed in oxygen ambient of 600 Torr at 530°C for 40 min. Superconductivity with zero resistance 89.1K was observed for the YBCO films after annealing. These results show that thermal annealing is an important technique for improving the parameters of thin superconducting films. A correlation between the YBCO layers properties before and after annealing was established.

  6. Temperature dependent nonlinear metal matrix laminae behavior

    NASA Technical Reports Server (NTRS)

    Barrett, D. J.; Buesking, K. W.

    1986-01-01

    An analytical method is described for computing the nonlinear thermal and mechanical response of laminated plates. The material model focuses upon the behavior of metal matrix materials by relating the nonlinear composite response to plasticity effects in the matrix. The foundation of the analysis is the unidirectional material model which is used to compute the instantaneous properties of the lamina based upon the properties of the fibers and matrix. The unidirectional model assumes that the fibers properties are constant with temperature and assumes that the matrix can be modelled as a temperature dependent, bilinear, kinematically hardening material. An incremental approach is used to compute average stresses in the fibers and matrix caused by arbitrary mechanical and thermal loads. The layer model is incorporated in an incremental laminated plate theory to compute the nonlinear response of laminated metal matrix composites of general orientation and stacking sequence. The report includes comparisons of the method with other analytical approaches and compares theoretical calculations with measured experimental material behavior. A section is included which describes the limitations of the material model.

  7. Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

    PubMed

    Sadowski, Janusz; Domagala, Jaroslaw Z; Mathieu, Roland; Kovacs, Andras; Dłużewski, Piotr

    2013-05-15

    The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 °C annealing and diffuse throughout the GaAs spacer layers at 630 °C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.

  8. Lithium phosphorus oxynitride solid-state thin-film electrolyte deposited and modified by bias sputtering and low temperature annealing

    SciTech Connect

    Chiu, K.-F.; Chen, C. C.; Lin, K. M.; Lo, C. C.; Lin, H. C.; Ho, W.-H.; Jiang, C. S.

    2010-07-15

    Amorphous lithium phosphorus oxynitride (LiPON) solid-state thin-film electrolyte has been deposited and characterized. The thin films were prepared by rf magnetron sputtering under various substrate biases. By fabricating under different substrate biases and applying low temperature annealing (473 K), the properties of the LiPON thin-film electrolytes and the electrolyte/cathode interfaces were modified. The ionic conductivity as high as 9.4x10{sup -4} S m{sup -1} can be obtained by depositing at optimal bias. The performances of the consequently fabricated SnO{sub 2}/LiPON/LiMn{sub 2}O{sub 4} all-solid-state lithium ion thin-film batteries were improved using the bias sputtering technique, due to the enhanced the ionic conductivity and uniform interface.

  9. Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

    NASA Astrophysics Data System (ADS)

    Li, Yali; Li, Chunyang; He, Deyan; Li, Junshuai

    2009-05-01

    We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ~4.6 × 10-4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ~1.21 × 1021 cm-3 and a lower mobility of ~11.4 cm2 V-1 s-1. More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

  10. Transparent Conductive Cu-doped ZnSe Film Deposited at Room Temperature Using Compound Sources Followed by Laser Annealing

    NASA Astrophysics Data System (ADS)

    Orita, Masahiro; Narushima, Takashi; Yanagita, Hiroaki

    2007-10-01

    The evaporation of ZnSe and Cu2Se powders was used to deposit a Cu-doped ZnSe film on a glass substrate at room temperature; this was followed by laser beam (λ = 355 nm) annealing. The film consisted of a zinc blende, ZnSe, crystalline single phase with the chemical composition (Zn0.9Cu0.1)Se. Over 70% optical transmittance was obtained in the green-red region. The film had a p-type polarity with a conductivity of 0.45 S cm-1 and a workfunction of 4.7 eV. P-n diodes fabricated with the film on an n-type ZnSe:Cl layer showed rectangular behavior with a small turn-on voltage of ˜1.5 V, which is plausibly explained by development of an impurity band.

  11. Vanadium dioxide thin films prepared on silicon by low temperature MBE growth and ex-situ annealing

    NASA Astrophysics Data System (ADS)

    Homm, Pia; van Bilzen, Bart; Menghini, Mariela; Locquet, Jean-Pierre; Ivanova, Todora; Sanchez, Luis; Sanchis, Pablo

    Vanadium dioxide (VO2) is a material that shows an insulator to metal transition (IMT) near room temperature. This property can be exploited for applications in field effect devices, electro-optical switches and nonlinear circuit components. We have prepared VO2 thin films on silicon wafers by combining a low temperature MBE growth with an ex-situ annealing at high temperature. We investigated the structural, electrical and optical characteristics of films with thicknesses ranging from 10 to 100 nm. We have also studied the influence of the substrate cleaning. The films grown with our method are polycrystalline with a preferred orientation in the (011) direction of the monoclinic phase. For the films produced on silicon with a native oxide, an IMT at around 75 °C is observed. The magnitude of the resistance change across the IMT decreases with thickness while the refractive index at room temperature corresponds with values reported in the literature for thin films. The successful growth of VO2 films on silicon with good electrical and optical properties is an important step towards the integration of VO2 in novel devices. The authors acknowledge financial support from the FWO project G052010N10 and EU-FP7 SITOGA project. PH acknowledges support from Becas Chile - CONICYT.

  12. Study the Effect of Annealing Temperature on Optical and Structural Properties of Zinc Oxide Thin Film Prepared by Thermal Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Adawiah, R.; Rafaie, H. A.; Rusop, M.

    2009-06-01

    Zinc oxide (ZnO) thin films deposited on silicon and glass substrate were prepared using chemical vapor deposition (CVD) method utilizing zinc acetate dihydrate as the zinc sources. The deposited film then annealed at 300° C to 500° C for 1 hour. The optical and structural properties of ZnO thin films were characterized using photoluminescence (PL) and Scanning Electron Microscopy (SEM) respectively. SEM images show that the ZnO thin film on silicon substrate formed unique morphology of flower-like and ball-shaped structures at annealing temperature 300° C and 400° C. Increasing annealing temperature to 450° C for ZnO deposited on glass substrate had increased the grain size of particle which implies the improvement of crystalline grain of thin film. PL results observed that the defect of oxygen vacancy decreased after annealing process for films deposited on silicon substrate. The blue peak emission at 437 nm appears only on the glass substrate. Based on the highest PL intensity value, the optimum annealing temperature for silicon and glass substrate is 350° C and 450° C respectively.

  13. The effect of annealing temperatures to prepare ZnO seeds layer on ZnO nanorods array/TiO2 nanoparticles photoanode

    NASA Astrophysics Data System (ADS)

    Chou, Hsueh-Tao; Hsu, Ho-Chun

    2016-02-01

    In this study, we have fabricated a ZnO nanorods array/TiO2 nanoparticles thin-film as a photoanode, and also investigated the annealing effect at various temperatures (as grown, 250 °C, 350 °C, 450 °C and 550 °C) on ZnO seeds layer. The material properties of ZnO nanorods array were investigated by field emission scanning electron microscopy (FE-SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and ultraviolet visible spectroscopy. Besides, the performances of solar cells were evaluated using a source meter (Keithley 2400), which included open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (F.F.) and power conversion efficiency (η%) at one sun (A.M. 1.5G, 100 mW/cm2). The electrochemical properties of the cells were analyzed by electrochemical impedance spectroscopy (EIS). From the EIS results, the cell performances were affected by annealing temperature, especially the fill-factor, at an annealing temperature of 550 °C due to the annealing treatment can enhance the connection between the interfaces of ZnO seeds/TCO, improving the electron lifetime, reducing the electron recombination loss. Finally, the sample annealing at 550 °C has the highest fill-factor of 44, power conversion efficiency of 0.19%, the highest Rct2 of 162.8 Ω and long electron lifetime of 7.25 ms.

  14. Thickness-dependent crystallization on thermal anneal for titania/silica nm-layer composites deposited by ion beam sputter method.

    PubMed

    Pan, Huang-Wei; Wang, Shun-Jin; Kuo, Ling-Chi; Chao, Shiuh; Principe, Maria; Pinto, Innocenzo M; DeSalvo, Riccardo

    2014-12-01

    Crystallization following thermal annealing of thin film stacks consisting of alternating nm-thick titania/silica layers was investigated. Several prototypes were designed, featuring a different number of titania/silica layer pairs, and different thicknesses (in the range from 4 to 40 nm, for the titania layers), but the same nominal refractive index (2.09) and optical thickness (a quarter of wavelength at 1064 nm). The prototypes were deposited by ion beam sputtering on silicon substrates. All prototypes were found to be amorphous as-deposited. Thermal annealing in air at progressive temperatures was subsequently performed. It was found that the titania layers eventually crystallized forming the anatase phase, while the silica layers remained always amorphous. However, progressively thinner layers exhibited progressively higher threshold temperatures for crystallization onset. Accordingly it can be expected that composites with thinner layers will be able to sustain higher annealing temperatures without crystallizing, and likely yielding better optical and mechanical properties for advanced coatings application. These results open the way to the use of materials like titania and hafnia, that crystallize easily under thermal anneal, but ARE otherwise promising candidate materials for HR coatings necessary for cryogenic 3rd generation laser interferometric gravitational wave detectors.

  15. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    PubMed

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  16. Investigation of high temperature annealing effectiveness for recovery of radiation-induced structural changes and properties of 18Cr-10Ni-Ti austenitic stainless steels

    NASA Astrophysics Data System (ADS)

    Gurovich, B. A.; Kuleshova, E. A.; Frolov, A. S.; Maltsev, D. A.; Prikhodko, K. E.; Fedotova, S. V.; Margolin, B. Z.; Sorokin, A. A.

    2015-10-01

    A complex study of structural state and properties of 18Cr-10Ni-Ti austenitic stainless steel after irradiation in BOR-60 fast research reactor (in the temperature range 330-400 °С up to damaging doses of 145 dpa) and in VVER-1000 light water reactor (at temperature ∼320 °С and damaging doses ∼12-14 dpa) was performed. The possibility of recovery of structural-phase state and mechanical properties to the level almost corresponding to the initial state by the recovery annealing was studied. The principal possibility of the recovery annealing of pressurized water reactor internals that ensures almost complete recovery of its mechanical properties and microstructure was shown. The optimal mode of recovery annealing was established: 1000 °C during 120 h.

  17. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    NASA Astrophysics Data System (ADS)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  18. The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

    SciTech Connect

    Ahn, Byung Du; Choi, Dong-won Choi, Changhwan; Park, Jin-Seong

    2014-09-01

    We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO{sub 2} films as a function of the annealing temperature. The ZTO and ZnO, except for SnO{sub 2}, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 °C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 °C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm{sup 2}/V s and a negative bias instability of −0.2 V.

  19. Human Cell Assays for Synthesis-Dependent Strand Annealing and Crossing over During Double-Strand Break Repair

    PubMed Central

    Zapotoczny, Grzegorz; Sekelsky, Jeff

    2017-01-01

    DNA double-strand breaks (DSBs) are one of the most deleterious types of lesions to the genome. Synthesis-dependent strand annealing (SDSA) is thought to be a major pathway of DSB repair, but direct tests of this model have only been conducted in budding yeast and Drosophila. To better understand this pathway, we developed an SDSA assay for use in human cells. Our results support the hypothesis that SDSA is an important DSB repair mechanism in human cells. We used siRNA knockdown to assess the roles of a number of helicases suggested to promote SDSA. None of the helicase knockdowns reduced SDSA, but knocking down BLM or RTEL1 increased SDSA. Molecular analysis of repair products suggests that these helicases may prevent long-tract repair synthesis. Since the major alternative to SDSA (repair involving a double-Holliday junction intermediate) can lead to crossovers, we also developed a fluorescent assay that detects crossovers generated during DSB repair. Together, these assays will be useful in investigating features and mechanisms of SDSA and crossover pathways in human cells. PMID:28179392

  20. Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance

    NASA Astrophysics Data System (ADS)

    Globisch, B.; Dietz, R. J. B.; Nellen, S.; Göbel, T.; Schell, M.

    2016-12-01

    The influence of post-growth annealing on the electrical properties, the transient carrier dynamics and the performance as THz photoconductive receiver of Beryllium (Be) doped InGaAs/InAlAs multilayer heterostructures grown at 130 °C in a molecular beam epitaxy (MBE) system was investigated. We studied samples with nominally Be doping concentrations of 8 ×10 17 cm-3 - 1.2 ×1019 cm3 annealed for 15 min. - 120 min. at temperatures between 500 °C - 600 °C. In contrast to previous publications, the results show consistently that annealing increases the electron lifetime of the material. In analogy to the annealing properties of low-temperature grown (LTG) GaAs we explain our findings by the precipitation of arsenic antisite defects. The knowledge of the influence of annealing on the material properties allowed for the fabrication of broadband THz photoconductive receivers with an electron lifetime below 300 fs and varying electrical properties. We found that the noise of the detected THz pulse trace in time-domain spectroscopy (TDS) was directly determined by the resistance of the photoconductive receiver and the peak-to-peak amplitude of the THz pulse correlated with the electron mobility.

  1. Effect of high temperature swaging and annealing on the mechanical properties and thermal conductivity of W-Y2O3

    NASA Astrophysics Data System (ADS)

    Xie, Z. M.; Liu, R.; Miao, S.; Zhang, T.; Wang, X. P.; Fang, Q. F.; Liu, C. S.; Luo, G. N.

    2015-09-01

    The mechanical properties and thermal conductivity of W-1.0 wt%Y2O3 (WY10) alloys prepared by spark plasma sintering (SPS) as well as ordinary sintering followed by swaging and annealing treatment, respectively, were investigated. The grains in the swaged WY10 are of round-bar shape with average diameter and length of 4.6 and 26.7 μm, respectively, which keep stable even after being annealed for 1 h at 1300 °C. The ductile-brittle transition temperature (DBTT) of swaged and annealed WY10 is about 200 °C, much lower than that of WY10 prepared by SPS method (∼500 °C). Annealing significantly improves thermal conductivity from 146 to 198 W/m K at room temperature. In addition, the total elongation is raised by 5.7 times than that of the unannealed one. The results indicate that the strength, ductility and thermal conductivity can be greatly improved by swaging and subsequent annealing.

  2. Non-Stoichiometric Amorphous Indium Selenide Thin Films as a Buffer Layer for CIGS Solar Cells with Various Temperatures in Rapid Thermal Annealing.

    PubMed

    Yoo, Myoung Han; Kim, Nam-Hoon

    2016-05-01

    The conventional structure of most of copper indium gallium diselenide (Culn(1-x)Ga(x)Se2, CIGS) solar cells includes a CdS thin film as a buffer layer. Cd-free buffer layers have attracted great interest for use in photovoltaic applications to avoid the use of hazardous and toxic materials. The RF magnetron sputtering method was used with an InSe2 compound target to prepare the indium selenide precursor. Rapid thermal annealing (RTA) was conducted in ambient N2 gas to control the concentration of volatile Se from the precursor with a change in temperature. The nature of the RTA-treated indium selenide thin films remained amorphous under annealing temperatures of ≤ 700 degrees C. The Se concentration of the RTA-treated specimens demonstrated an opposite trend to the annealing temperature. The optical transmittance and band gap energies were 75.33% and 2.451-3.085 eV, respectively, and thus were suitable for the buffer layer. As the annealing temperature increased, the resistivity decreased by an order-of-magnitude from 10(4) to 10(1) Ω-cm. At lower Se concentrations, the conductivity abruptly changed from p-type to n-type without crystallite formation in the amorphous phase, with the carrier concentration in the order of 10(17) cm(-3).

  3. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

    PubMed

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

    2014-10-07

    In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

  4. Temperature-dependent spectral mismatch corrections

    DOE PAGES

    Osterwald, Carl R.; Campanelli, Mark; Moriarty, Tom; ...

    2015-11-01

    This study develops the mathematical foundation for a translation of solar cell short-circuit current from one thermal and spectral irradiance operating condition to another without the use of ill-defined and error-prone temperature coefficients typically employed in solar cell metrology. Using the partial derivative of quantum efficiency with respect to temperature, the conventional isothermal expression for spectral mismatch corrections is modified to account for changes of current due to temperature; this modification completely eliminates the need for short-circuit-current temperature coefficients. An example calculation is provided to demonstrate use of the new translation.

  5. Water temperature dependence of single bubble sonoluminescence threshold.

    PubMed

    Germano, M; Alippi, A; Bettucci, A; Brizi, F; Passeri, D

    2010-01-01

    Water temperature dependence of single bubble sonoluminescence (SBSL) threshold has been experimentally measured to perform measurements at different temperatures on the very same bubble. Results show lower thresholds, i.e. an easier prime of mechanism, of sonoluminescence at lower water temperatures. Dependence is almost linear at lower temperatures while between 14 degrees C and about 20 degrees C the curve changes its slope reaching soon a virtual independence from water temperature above about 20 degrees C.

  6. Effect of low temperature vacuum annealing on microstructural, optical, electronic, electrical, nanomechanical properties and phase transition behavior of sputtered vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Porwal, Deeksha; Esther, A. Carmel Mary; Dey, Arjun; Gupta, A. K.; Raghavendra Kumar, D.; Bera, Parthasarathi; Barshilia, Harish C.; Bhattacharya, Manjima; Mukhopadhyay, Anoop Kumar; Khan, Kallol; Sharma, Anand Kumar

    2016-10-01

    Vanadium oxide thin films were deposited on quartz substrate by pulsed RF magnetron sputtering technique at 400-600 W and subsequently annealed at 100 °C in vacuum (1.5 × 10-5 mbar). Phase analysis, surface morphology and topology of the films e.g., both as-deposited and annealed were investigated by x-ray diffraction, field emission scanning electron microscopy and atomic force microscopy techniques. X-ray photoelectron spectroscopy (XPS) was employed to understand the elemental oxidation of the films. Transmittance of the films was evaluated by UV-vis-NIR spectrophotometer in the wavelength range of 200-1600 nm. Sheet resistance of the films was measured by two-probe method both for as-deposited and annealed conditions. XPS study showed the existence of V5+ and V4+ species. Metal to insulator transition temperature of the as-deposited film decreased from 339 °C to 326 °C after annealing as evaluated by differential scanning calorimetric technique. A significant change in transmittance was observed in particular at near infrared region due to alteration of surface roughness and grain size of the film after annealing. Sheet resistance values of the annealed films decreased as compared to the as-deposited films due to the lower in oxidation state of vanadium which led to increase in carrier density. Combined nanoindentation and finite element modeling were applied to evaluate nanohardness (H), Young’s modulus (E), von Mises stress and strain distribution. Both H and E were improved after annealing due to increase in crystallinity of the film.

  7. Effect of annealing temperature on the optical spectra of CdS thin films deposited at low solution concentrations by Chemical Bath Deposition (CBD) Technique.

    PubMed

    Rizwan, Zahid; Zakaria, Azmi; Mohd Ghazali, Mohd Sabri; Jafari, Atefeh; Din, Fasih Ud; Zamiri, Reza

    2011-02-22

    Two different concentrations of CdCl(2) and (NH(2))(2)CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD) technique. CdCl(2) (0.000312 M and 0.000625 M) was employed as a source of Cd(2+) while (NH(2))(2)CS (0.00125 M and 0.000625 M) for S(2-) at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl(2) (0.000312 M). Optical energy band gap (E(g)), Urbach energy (E(u)) and absorption coefficient (α) have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97%) was obtained for the air-annealed films at higher temperature at CdCl(2) (0.000312 M).

  8. Modeling temperature dependence of trace element concentrations in groundwater using temperature dependent distribution coefficient

    NASA Astrophysics Data System (ADS)

    Saito, H.; Saito, T.; Hamamoto, S.; Komatsu, T.

    2015-12-01

    In our previous study, we have observed trace element concentrations in groundwater increased when groundwater temperature was increased with constant thermal loading using a 50-m long vertical heat exchanger installed at Saitama University, Japan. During the field experiment, 38 degree C fluid was circulated in the heat exchanger resulting 2.8 kW thermal loading over 295 days. Groundwater samples were collected regularly from 17-m and 40-m deep aquifers at four observation wells located 1, 2, 5, and 10 m, respectively, from the heat exchange well and were analyzed with ICP-MS. As a result, concentrations of some trace elements such as boron increased with temperature especially at the 17-m deep aquifer that is known as marine sediment. It has been also observed that the increased concentrations have decreased after the thermal loading was terminated indicating that this phenomenon may be reversible. Although the mechanism is not fully understood, changes in the liquid phase concentration should be associated with dissolution and/or desorption from the solid phase. We therefore attempt to model this phenomenon by introducing temperature dependence in equilibrium linear adsorption isotherms. We assumed that distribution coefficients decrease with temperature so that the liquid phase concentration of a given element becomes higher as the temperature increases under the condition that the total mass stays constant. A shape function was developed to model the temperature dependence of the distribution coefficient. By solving the mass balance equation between the liquid phase and the solid phase for a given element, a new term describing changes in the concentration was implemented in a source/sink term of a standard convection dispersion equation (CDE). The CDE was then solved under a constant ground water flow using FlexPDE. By calibrating parameters in the newly developed shape function, the changes in element concentrations observed were quite well predicted. The

  9. Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

    SciTech Connect

    Bayu Aji, L. B.; Wallace, J. B.; Shao, L.; Kucheyev, S. O.

    2016-08-03

    Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.

  10. Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

    DOE PAGES

    Bayu Aji, L. B.; Wallace, J. B.; Shao, L.; ...

    2016-08-03

    Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a changemore » in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.« less

  11. Numerical investigation of temperature field Induced by dual wavelength lasers in sub-microsecond laser annealing technology for insulated gate bipolar transistor

    NASA Astrophysics Data System (ADS)

    Cui, GuoDong; Ma, Mingying; Wang, Fan; Sun, Gang; Lan, Yanping; Xu, Wen

    2015-07-01

    To enhance the performance of the Insulated Gate Bipolar Transistor (IGBT), sub-microsecond laser annealing (LA) is propitious to achieve maximal dopant activation with minimal diffusion. In this work, two different lasers are used as annealing resource: a continuous 808 nm laser with larger spot is applied to preheat the wafer and another sub-microsecond pulsed 527 nm laser is responsible to activate the dopant. To optimize the system's performance, a physical model is presented to predict the thermal effect of two laser fields interacting on wafer. Using the Finite-Element method (FEM), we numerically investigate the temperature field induced by lasers in detail. The process window corresponding to the lasers is also acquired which can satisfy the requirements of the IGBT's annealing.

  12. Low-temperature volume radiation annealing of cold-worked bands of Al-Li-Cu-Mg alloy by 20-40 keV Ar+ ion

    NASA Astrophysics Data System (ADS)

    Ovchinnikov, V. V.; Gushchina, N. V.; Mozharovsky, S. M.; Kaigorodova, L. I.

    2017-01-01

    The processes of radiation-dynamic nature (in contrast to the thermally-activated processes) in the course of short-term irradiation of 1 mm thick bands of cold-worked aluminum alloy 1441 (of system Al-Li-Cu-Mg) with Ar+ 20-40 keV were studied. An effect of in-the-bulk (throughout the whole of metal bands thickness) low-temperature radiation annealing of the named alloy, multiply accelerated as compared with common thermal annealing processes was registered (with projected ranges of ions of considered energies definitely not exceeding 0.1 μm). The processes of recrystallization and intermetallic structure changes (occurring within a few seconds of Ar+ irradiation) have the common features as well as the differences in comparison with the results of two hour standard thermal annealing.

  13. Doubling the critical current density in superconducting FeSe0.5Te0.5 thin films by low temperature oxygen annealing

    DOE PAGES

    Zhang, Cheng; Si, Weidong; Li, Qiang

    2016-11-14

    Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities Jc, low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field Jc, particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field Jc in FeSe0.5Te0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm2. In-field performance is also dramatically enhanced. In conclusion, our results demonstrate thatmore » low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.« less

  14. AlN Bandgap Temperature Dependence from its Optical Properties

    DTIC Science & Technology

    2008-06-07

    In the present work we report on the AlN gap energy temperature dependence studied through the optical properties of high-quality large bulk AlN...evolution of these features up to room temperature and inferred the gap energy temperature dependence using the exciton binding energy obtained by our group in the past.

  15. Temperature Dependent Frictional Properties of Crustal Rocks

    NASA Astrophysics Data System (ADS)

    Mitchell, Erica Kate

    In this dissertation, I study the effects of temperature on frictional properties of crustal rocks at conditions relevant to earthquake nucleation. I explore how temperature affects fault healing after an earthquake. I present results from slide-hold-slide experiments on Westerly granite that show that frictional healing rate increases slightly and shear strength increases with temperature. Based on our results, if the effects of temperature are neglected, fault strength could be under-predicted by as much as 10 percent. I use finite element numerical experiments to show that our frictional healing data can be explained by increases in contact area between viscoelastic rough surfaces. I investigate the influence of temperature on the transition from seismogenic slip to aseismic creep with depth in continental crust. I present results from velocity-stepping and constant load-point velocity experiments on Westerly granite conducted at a wide range of temperatures. I construct a numerical model incorporating the rate-state friction equations to estimate the values of (a-b) that provide the best fit to the stick-slip data. I find that sliding becomes more unstable ((a-b) < 0) with temperature up to the maximum temperature tested, 600 ºC. This contradicts a traditional view that the deep limit to seismicity in continental upper crust is caused by a transition to stable creep ((a-b) > 0) in granite at temperatures above ˜350 ºC. These results may help explain the occurrence of anomalously deep earthquakes found in areas of active extension and convergence. I explore the frictional properties of gabbro at conditions corresponding to slow slip events in subduction zones. I present results from experiments on gabbro conducted at low effective normal stress and temperatures between 20-600 ºC. I find that (a-b) decreases with temperature based on direct measurements and numerical modeling. I conclude that the occurrence of slow slip events at the base of the seismogenic

  16. Influence of annealing temperature on the dielectric properties of BaSrTiO3 thin films deposited on various substrates

    NASA Astrophysics Data System (ADS)

    Lee, Chil-Hyoung; Oh, Young-Jei; Lee, Deuk Yong; Choi, Doo-Jin

    2016-11-01

    (Ba0.5Sr0.5)TiO3 (BST) thin films were deposited on various substrates, such as LaAlO3(100), MgO(100), R-plane sapphire[1012], and polycrystalline sapphire, by using RF magnetron sputtering to investigate the influence of annealing temperature on the dielectric properties and the tunability of the films. The BST thin films deposited on LaAlO3(100) exhibited a high tunability of 42 % and a low dielectric loss of 0.004 due to the small differences in the lattice parameters and the thermal expansion coefficients between the BST films and the substrates. In contrast, the BST films deposited on a polycrystalline sapphire, exhibiting a relatively high mismatch factor, showed the tunability of 24 % and a dielectric loss of 0.007. The BST thin films on LaAlO3(100), MgO(100), R-plane sapphire[1012], and polycrystalline sapphire were annealed. The optimized annealing temperatures were found to be 950 °C, 1050 °C, 1100 °C, and 1150 °C, respectively. The difference in annealing temperature is likely due to the differences in the lattice parameters and the thermal expansion coefficients between the films and the substrates.

  17. Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

    SciTech Connect

    Shaikh, Shaheed U.; Desale, Dipalee J.; Siddiqui, Farha Y.; Ghosh, Arindam; Birajadar, Ravikiran B.; Ghule, Anil V.; Sharma, Ramphal

    2012-11-15

    Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.

  18. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Purohit, Anuradha; Chander, S.; Sharma, Anshu; Nehra, S. P.; Dhaka, M. S.

    2015-11-01

    This paper presents effect of low temperature annealing on the physical properties of ZnO thin films for photovoltaic applications. The thin films of thickness 50 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing radio frequency magnetron sputtering technique followed by thermal annealing within low temperature range 150-450 °C. These as-grown and annealed films were subjected to the X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of the as-grown ZnO film was also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the films have wurtzite structure of hexagonal phase with preferred orientation (1 0 0) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in detail. The optical band gap was found in the range 3.30-3.52 eV and observed to decrease with annealing temperature except 150 °C. The current-voltage characteristics show that the films exhibit approximately ohmic behavior. The SEM studies show that the films are uniform, homogeneous and free from crystal defects and voids. The experimental results reveal that ZnO thin films may be used as alternative materials for eco-friendly buffer layer to the thin film solar cell applications.

  19. Effect of annealing temperature on optical and electrical properties of ZrO{sub 2}−SnO{sub 2} based nanocomposite thin films

    SciTech Connect

    Anitha, V. S. Lekshmy, S. Sujatha Berlin, I. John Joy, K.

    2014-01-28

    Transparent nanocomposite ZrO{sub 2}−SnO{sub 2} thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO{sub 2} and SnO{sub 2} and orthorhombic ZrSnO{sub 4}. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO{sub 2}−SnO{sub 2} films can be used in many applications and in optoelectronic devices.

  20. Effect of annealing temperature on the microstructure and tensile properties of a bimodal nano/micro grained 1020 carbon steel prepared by aluminothermic reaction casting

    NASA Astrophysics Data System (ADS)

    La, Peiqing; Guo, Xin; Wang, Hongding; Shi, Ting; Zhen, Xiaojuan; Wei, Fuan; Lu, Xuefeng

    2016-03-01

    Bulk 1020 carbon steel was prepared by aluminothermic reaction casting. After casting, isothermal aging treatments at different temperatures are performed for different periods up to 8 h. Microstructure characterization was performed using many methods, including optical microscopy, X-ray diffraction, scanning electron microscopy and transmission electron microscopy. It was found that the steel consisted of a nanocrystalline- ferrite matrix and a microcrystalline pearlite phase with a laminar structure. The average grain sizes of the ferrite were 23, 24, 28, and 37 nm for the cast steel and for samples annealed at 600, 800, and 1000 °C, respectively. As the annealing temperature increased, the volume fraction of the pearlite initially increased and then decreased, while the laminar spacing of pearlite increased from 240 to 900 nm. When annealed at 1000 °C, a spherical black micron pearlite particle was formed. The tensile and yield strength dramatically decreased, and the elongation varied slightly with the annealing temperature. A ductile phase was achieved by extending the holding time.

  1. Temperature Dependence of Phonons in Pyrolitic Graphite

    DOE R&D Accomplishments Database

    Brockhouse, B. N.; Shirane, G.

    1977-01-01

    Dispersion curves for longitudinal and transverse phonons propagating along and near the c-axis in pyrolitic graphite at temperatures between 4°K and 1500°C have been measured by neutron spectroscopy. The observed frequencies decrease markedly with increasing temperature (except for the transverse optical ''rippling'' modes in the hexagonal planes). The neutron groups show interesting asymmetrical broadening ascribed to interference between one phonon and many phonon processes.

  2. Influence of air annealing temperature and time on the optical properties of Yb:YAG single crystal grown by HDS method

    NASA Astrophysics Data System (ADS)

    Nie, Ying; Liu, Yang; Zhao, Yequan; Zhang, Mingfu

    2015-08-01

    8 at.% Yb:YAG plate single crystal with the dimension of 170 mm × 150 mm × 30 mm was grown in vacuum by Horizontal Directional Solidification method. Aimed at blue-green color centers, annealing treatments of 15 mm × 15 mm × 1 mm samples from 900 °C to 1400 °C for 5 h and at 900 °C from 5 h to 40 h in air were conducted. The absorption spectra, emission spectra, fluorescence lifetime and X-ray photoelectron spectroscopy of samples under different annealing conditions were measured at room temperature, respectively. Annealing at above 1000 °C for 5 h or at 900 °C for 40 h made the blue-green color centers disappear and the samples turned to transparent. Absorption coefficients decreased in the 300 nm-800 nm wavelength range, emission intensities increased and emission bands broadened around 486 nm and 1029 nm with increasing temperature up to 1200 °C, then varied inversely. These values decreased or increased monotonically with increasing annealing time at 900 °C. The maximal increases of fluorescence lifetime were 62.3% and 64.7%, respectively. The calculated emission cross section of 1200 °C for 5 h was up to 4.4 × 10-20 cm2. In X-ray photoelectron spectroscopy, the concentrations of oxygen vacancies reduced from 1.28% down to absence by annealing. These experiments show that color centers are detrimental to the optical properties of HDS-Yb:YAG laser crystal and optimal annealing treatments should be conducted.

  3. Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing

    SciTech Connect

    Zhang, Jinhan; Zhou, Qi; Chen, Wanjun; Zhang, Bo; Huang, Sen Bao, Qilong; Wang, Xinhua; Wei, Ke; Zheng, Yingkui; Li, Yankui; Zhao, Chao; Liu, Xinyu

    2015-12-28

    The physical mechanism of low-thermal-budget Au-free ohmic contacts to AlGaN/GaN heterostructures is systematically investigated with current-voltage, high-resolution transmission electron microscopy, and temperature-dependent contact resistivity characterizations. With a low annealing temperature of 600 °C, pre-ohmic recess etching of the AlGaN barrier down to several nanometers is demonstrated to be an effective method to reduce the contact resistance between Ti/Al/Ti/W ohmic metals and AlGaN/GaN heterostructures. However, further over recess of the AlGaN barrier leads to only sidewall contact to 2D electron gas channel and thus degraded contact performance. It is verified by temperature-dependent contact resistivity measurements that field emission (tunneling) dominates the current transport mechanism in Au-free ohmic contacts with AlGaN barrier partially and over recessed, while both field emission and thermionic emission contribute to traditional Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures that annealed at high temperature (850 °C)

  4. Temperature dependence of interaction-induced entanglement

    SciTech Connect

    Khasin, Michael; Kosloff, Ronnie

    2005-11-15

    Both direct and indirect weak nonresonant interactions are shown to produce entanglement between two initially disentangled systems prepared as a tensor product of thermal states, provided the initial temperature is sufficiently low. Entanglement is determined by the Peres-Horodecki criterion, which establishes that a composite state is entangled if its partial transpose is not positive. If the initial temperature of the thermal states is higher than an upper critical value T{sub uc} the minimal eigenvalue of the partially transposed density matrix of the composite state remains positive in the course of the evolution. If the initial temperature of the thermal states is lower than a lower critical value T{sub lc}{<=}T{sub uc} the minimal eigenvalue of the partially transposed density matrix of the composite state becomes negative, which means that entanglement develops. We calculate the lower bound T{sub lb} for T{sub lc} and show that the negativity of the composite state is negligibly small in the interval T{sub lb}temperature T{sub lb} can be considered as the critical temperature for the generation of entanglement. It is conjectured that above this critical temperature a composite quantum system could be simulated using classical computers.

  5. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    NASA Astrophysics Data System (ADS)

    Iwamoto, Naoya; Azarov, Alexander; Ohshima, Takeshi; Moe, Anne Marie M.; Svensson, Bengt G.

    2015-07-01

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 1015 cm-3 range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ˜1014 cm-3). Schottky barrier diodes fabricated on substrates annealed at 1400-1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  6. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    SciTech Connect

    Iwamoto, Naoya Azarov, Alexander; Svensson, Bengt G.; Ohshima, Takeshi; Moe, Anne Marie M.

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  7. Temperature dependent behavior of ultrasound contrast agents.

    PubMed

    Mulvana, Helen; Stride, Eleanor; Hajnal, Jo V; Eckersley, Robert J

    2010-06-01

    Recent interest in ultrasound contrast agents (UCAs) as tools for quantitative imaging and therapy has increased the need for accurate characterization. Laboratory investigations are frequently undertaken in a water bath at room temperature; however, implications for in vivo applications are not presented. Acoustic investigation of a bulk suspension of SonoVue (Bracco Research, Geneva, Switzerland) was made in a water bath at temperatures of 20-45 degrees C. UCA characteristics were significantly affected by temperature, particularly between 20 and 40 degrees C, leading to an increase in attenuation from 1.7-2.5 dB, respectively (p = 0.002) and a 2-dB increase in scattered signal over the same range (p = 0.05) at an insonation pressure of 100 kPa. Optical data supported the hypothesis that a temperature-mediated increase in diameter was the dominant cause, and revealed a decrease in bubble stability. In conclusion, measurements made at room temperature require careful interpretation with regard to behavior in vivo.

  8. Temperature Dependence of Lithium Reactions with Air

    NASA Astrophysics Data System (ADS)

    Sherrod, Roman; Skinner, C. H.; Koel, Bruce

    2016-10-01

    Liquid lithium plasma facing components (PFCs) are being developed to handle long pulse, high heat loads in tokamaks. Wetting by lithium of its container is essential for this application, but can be hindered by lithium oxidation by residual gases or during tokamak maintenance. Lithium PFCs will experience elevated temperatures due to plasma heat flux. This work presents measurements of lithium reactions at elevated temperatures (298-373 K) when exposed to natural air. Cylindrical TZM wells 300 microns deep with 1 cm2 surface area were filled with metallic lithium in a glovebox containing argon with less than 1.6 ppm H20, O2, and N2. The wells were transferred to a hot plate in air, and then removed periodically for mass gain measurements. Changes in the surface topography were recorded with a microscope. The mass gain of the samples at elevated temperatures followed a markedly different behavior to that at room temperature. One sample at 373 K began turning red indicative of lithium nitride, while a second turned white indicative of lithium carbonate formation. Data on the mass gain vs. temperature and associated topographic changes of the surface will be presented. Science Undergraduate Laboratory Internship funded by Department of Energy.

  9. Effect of low temperature annealing on the wear properties of NITINOL

    NASA Astrophysics Data System (ADS)

    Mukunda, Sriram; Nath. S, Narendra; Herbert, Mervin A.; Mukunda, P. G.

    2016-02-01

    NiTi shape memory alloy is a wonder material that is a solution looking for problems. The material finds wide biomedical applications like endodontic files for root canal treatment and cardiovascular stents. This material has rendered the surgical procedure simple compared to that with the existing Stainless Steel (SS) or titanium ones. NiTi as an endodontic file would cause less discomfort to the patients in comparison to that with far stiffer SS or titanium ones. Here nearly equi-atomic 50:50 commercial NiTi rods were subjected to low temperature aging at 300 to 450°C. The wear resistance of the as-received and the heat-treated samples was studied using adhesive wear tests on hardened steel counter face. Abrasive wear tests were run against Alumina disc to simulate the working of endodontic drills and files against dental hard and soft tissues. The abrasive wear resistance is expected to be proportional to the Vickers Hardness of the material and is high for the 450°C heat-treated sample. A correlation between the mechanical properties and microstructures of this material is attempted

  10. Temperature Dependent Residual Stress Models for Ultra-High-Temperature Ceramics on High Temperature Oxidation

    NASA Astrophysics Data System (ADS)

    Wang, Ruzhuan; Li, Weiguo

    2016-11-01

    The strength of SiC-depleted layer of ultra-high-temperature ceramics on high temperature oxidation degrades seriously. The research for residual stresses developed within the SiC-depleted layer is important and necessary. In this work, the residual stress evolutions in the SiC-depleted layer and the unoxidized substrate in various stages of oxidation are studied by using the characterization models. The temperature and oxidation time dependent mechanical/thermal properties of each phase in SiC-depleted layer are considered in the models. The study shows that the SiC-depleted layer would suffer from large tensile stresses due to the great temperature changes and the formation of pores on high temperature oxidation. The stresses may lead to the cracking and even the delamination of the oxidation layer.

  11. TEMPERATURE DEPENDENCE OF LINE STRUCTURE OF CADMIUM SULFIDE EDGE EMISSION

    DTIC Science & Technology

    The temperature dependence of the line structure in Cds edge emission stimulated by UV light was investigated from 4.2 K to 367 K. The spectral... dependence of the primary line groups is a linear function of temperature above 220 K with coefficients of change of 1.27 and 1.8 Angstroms degree K for the...lines observed. Below 220 K the dependence departs from linearity and approaches its limiting value more rapidly with decreasing temperature

  12. The effects of deposition conditions and annealing temperature on the performance of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Bradley, Tanina; Iyer, Shanthi; Alston, Robert; Collis, Ward; Lewis, Jay; Cunningham, Garry; Forsythe, Eric

    2013-03-01

    In this work the performance of bottom gate thin film transistors (TFTs) with transparent amorphous gallium tin zinc oxide (GSZO) active layers fabricated by radio frequency sputter deposition using a single GSZO target on SiO2/Si wafers will be presented. Trap density and its energetic distribution, and oxygen chemisorption were found to play a critical role in determining the operational characteristics of the device, all of which can be controlled by the oxygen incorporation and substrate temperature during deposition, along with the post-deposition annealing. In addition device instability, with respect to the electrical stress and optical illumination, can be suppressed by suitably tailoring these parameters. TFTs exhibiting a drain current (ID) of 10-6 A and on/off current ratio (Ion/off ) of 106 was achieved. A stable TFT has been achieved under electrical stress for 2% oxygen flow exhibiting ΔVT as low as ~0.5 V for 3hr stress under a gate bias of 1.2 and 12 V, with good optical stability.

  13. Enhanced electrical and optical properties of room temperature deposited Aluminium doped Zinc Oxide (AZO) thin films by excimer laser annealing

    NASA Astrophysics Data System (ADS)

    El hamali, S. O.; Cranton, W. M.; Kalfagiannis, N.; Hou, X.; Ranson, R.; Koutsogeorgis, D. C.

    2016-05-01

    High quality transparent conductive oxides (TCOs) often require a high thermal budget fabrication process. In this study, Excimer Laser Annealing (ELA) at a wavelength of 248 nm has been explored as a processing mechanism to facilitate low thermal budget fabrication of high quality aluminium doped zinc oxide (AZO) thin films. 180 nm thick AZO films were prepared by radio frequency magnetron sputtering at room temperature on fused silica substrates. The effects of the applied RF power and the sputtering pressure on the outcome of ELA at different laser energy densities and number of pulses have been investigated. AZO films deposited with no intentional heating at 180 W, and at 2 mTorr of 0.2% oxygen in argon were selected as the optimum as-deposited films in this work, with a resistivity of 1×10-3 Ω.cm, and an average visible transmission of 85%. ELA was found to result in noticeably reduced resistivity of 5×10-4 Ω.cm, and enhancing the average visible transmission to 90% when AZO is processed with 5 pulses at 125 mJ/cm2. Therefore, the combination of RF magnetron sputtering and ELA, both low thermal budget and scalable techniques, can provide a viable fabrication route of high quality AZO films for use as transparent electrodes.

  14. Quasipermanent magnets of high temperature superconductor - Temperature dependence

    NASA Technical Reports Server (NTRS)

    Chen, In-Gann; Liu, Jianxiong; Ren, Yanru; Weinstein, Roy; Kozlowski, Gregory; Oberly, Charles E.

    1993-01-01

    We report on persistent field in quasi-permanent magnets of high temperature superconductors. Magnets composed of irradiated Y(1+)Ba2Cu3O7 trapped field Bt = 1.52 T at 77 K and 1.9 T at lower temperature. However, the activation magnet limited Bt at lower temperature. We present data on Jc(H,T) for unirradiated materials, and calculate Bt at various T. Based upon data at 65 K, we calculate Bt in unirradiated single grains at 20 K and find that 5.2 T will be trapped for grain diameter d about 1.2 cm, and 7.9 T for d = 2.3 cm. Irradiated grains will trap four times these values.

  15. Temperature dependence of soil water potential

    SciTech Connect

    Mohamed, A.M.O.; Yong, R.N. ); Cheung, S.C.H. )

    1992-12-01

    To understand the process of coupled heat and water transport, the relationship between temperature and soil water potential must be known. Two clays, Avonlea bentonite and Lake Agassiz clay, are being considered as the clay-based sealing materials for the Canadian nuclear fuel waste disposal vault. Avonlea bentonite is distinguished from Lake Agassiz clay by its high sealing potential in water. A series of experiments was performed in which the two clays were mixed with equal amounts of sand and were compacted to a dry density of 1.67 Mg/m[sup 3] under various moisture contents and temperatures. A psychrometer was placed within the compacted clay-sand to measure the soil water potential based on the electromotive force measured by the psychrometer. The results indicate that the soil water potential at a particular temperature is higher for both clay-sand mixtures than predicted by the change in the surface tension of water; this effect is much more prominent in the Avonlea bentonite and at low moisture contents. The paper presents empirical equations relating the soil water potential with the moisture content and temperature of the two clay-sand mixtures. 24 refs., 8 figs., 2 tabs.

  16. Interface and temperature dependent magnetic properties of 57Fe/Ti/Co multilayers

    NASA Astrophysics Data System (ADS)

    Jain, Vishal; Lakshmi, N.; Sudheesh, V. D.; Jain, Vivek Kumar; Reddy, V. R.; Venugopalan, K.; Gupta, Ajay

    2014-09-01

    The effect of thermal annealing on the interface of 57Fe/Ti/Co multilayer and associated changes in microstructure, hyperfine field and bulk magnetic properties such as saturation magnetization, coercivity and squareness has been studied by X-ray diffraction, X-ray reflectivity, conversion electron Mössbauer spectroscopy and vibrating sample magnetometry. With increase in annealing temperature, interdiffusion leads to an increase in the roughness, hyperfine fields and coercivity along with a decrease in saturation magnetization. Annealing at 823 K leads to the formation of a FeCo phase along with the precipitation of Ti. The electrical resistivity (ρ) of the as-deposited sample decreases on annealing and hence the thermal coefficient of resistance (TCR) goes from negative to positive on annealing the samples. All samples show Curie temperature in excess of 723 K.

  17. Effect of annealing temperature on the structural and magnetic properties of CTAB-capped SrFe12O19 platelets

    NASA Astrophysics Data System (ADS)

    Harikrishnan, V.; Saravanan, P.; Ezhil Vizhi, R.; Babu, D. Rajan; Vinod, V. T. P.; Kejzlar, Pavel; Černík, Miroslav

    2016-03-01

    The use of surfactant such as cetyl-trimethyl ammonium bromide (CTAB) in producing highly coercive SrFe12O19 platelets is presented in this study. The synthesis of SrFe12O19 was accomplished by co-precipitation in presence of 1 wt% CTAB. The CTAB-coated precipitant thus obtained was subjected to annealing at different temperatures: 700, 800, 900 and 1000 °C. The annealed counterparts were characterized with respect to their structural and magnetic properties and the results are compared with that of those processed without CTAB. Thermogravimetry analysis was employed to study the thermo-chemical behavior for the SrFe12O19 samples. The evolution of crystalline phases as a function of annealing temperature was studied using x-ray diffraction. For the SrFe12O19 samples without CTAB, formation of α-Fe2O3 secondary phases are noticed at annealing temperatures of 700 and 800 °C; while such a secondary phase formation is not evident for the CTAB-capped SrFe12O19. Fourier transform infrared spectroscopy of the samples annealed at 1000 °C showed deformation in the structure due to the splitting of the bands. Both morphology and composition of the samples were examined by a field-emission scanning electron microscope attached with energy dispersive x-ray analysis. The morphology of CTAB-capped SrFe12O19 samples showed the presence of hexagonal platelets at higher annealing temperatures. The magnetic parameters such as saturation magnetization, MS and coercivity, HC were evaluated from the magnetic hysteresis loops obtained by vibrating sample magnetometer. Maximum values of HC (6.3 kOe) and MS (42.7 emu/g) were obtained for the CTAB-capped SrFe12O19 samples annealed at 900 °C. The possible mechanism on the formation of M-type hexagonal phase with platelet morphology using minimal amount of CTAB (1 wt%) in achieving high the HC values for the SrFe12O19 is discussed.

  18. Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Scott, Robin C.; Leedy, Kevin D.; Bayraktaroglu, Burhan; Look, David C.; Smith, David J.; Ding, Ding; Lu, Xianfeng; Zhang, Yong-Hang

    2011-04-01

    Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H2 in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.

  19. The influence of composition, annealing treatment, and texture on the fracture toughness of Ti-5Al-2.5Sn plate at cryogenic temperatures

    NASA Technical Reports Server (NTRS)

    Vanstone, R. H.; Shannon, J. L., Jr.; Pierce, W. S.; Low, J. R., Jr.

    1977-01-01

    The plane strain fracture toughness K sub Ic and conventional tensile properties of two commercially produced one-inch thick Ti-5Al-2.5Sn plates were determined at cryogenic temperatures. One plate was extra-low interstitial (ELI) grade, the other normal interstitial. Portions of each plate were mill annealed at 1088 K (1500 F) followed by either air cooling or furnace cooling. The tensile properties, flow curves, and K sub Ic of these plates were determined at 295 K (room temperature), 77 K (liquid nitrogen temperature), and 20 K (liquid hydrogen temperature).

  20. Effects of oxygen partial pressure, deposition temperature, and annealing on the optical response of CdS:O thin films as studied by spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Junda, Maxwell M.; Grice, Corey R.; Subedi, Indra; Yan, Yanfa; Podraza, Nikolas J.

    2016-07-01

    Ex-situ spectroscopic ellipsometry measurements are made on radio frequency magnetron sputtered oxygenated cadmium sulfide (CdS:O) thin films. Films are deposited onto glass substrates at room temperature and at 270 °C with varying oxygen to total gas flow ratios in the sputtering ambient. Ellipsometric spectra from 0.74 to 5.89 eV are collected before and after annealing at 607 °C to simulate the thermal processes during close-space sublimation of overlying cadmium telluride in that solar cell configuration. Complex dielectric function (ɛ = ɛ1 + iɛ2) spectra are extracted for films as a function of oxygen gas flow ratio, deposition temperature, and post-deposition annealing using a parametric model accounting for critical point transitions and an Urbach tail for sub-band gap absorption. The results suggest an inverse relationship between degree of crystallinity and oxygen gas flow ratio, whereas annealing is shown to increase crystallinity in all samples. Direct band gap energies are determined from the parametric modeling of ɛ and linear extrapolations of the square of the absorption coefficient. As-deposited samples feature a range of band gap energies whereas annealing is shown to result in gap energies ranging only from 2.40 to 2.45 eV, which is close to typical band gaps for pure cadmium sulfide.

  1. Role of substrate and annealing temperature on the structure of ZnO and AlxZn1-xO thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Nambala, Fred Joe; Nel, Jacqueline M.; Machatine, Augusto G. J.; Mwakikunga, Bonex W.; Njoroge, Eric G.; Maabong, Kelebogile; Das, Arran G. M.; Diale, Mmantsae

    2016-01-01

    This paper reports on the deposition of pure and 5 at% Al doped ZnO (AZO) prepared by sol-gel and applied to the substrates by spin-coating, and the role of annealing temperature on the crystallinity of these layers. It is found that both ZnO and AZO are largely amorphous when coated on glass compared to n-Si(111), as substrates. On both substrates, X-ray diffraction (XRD) shows that the crystallinity improves as annealing temperature is raised from 200 to 600 °C with better crystallinity on Si substrates. The thickness of the films on substrates was determined as 120 nm by Rutherford backscattering spectroscopy (RBS). Specular ultra-violet visible (UV-vis) gives the direct transition optical band gaps (Eg) for AZO as-deposited films are 2.60 and 3.35 eV while that of 600 °C annealed films are 3.00 and 3.60 eV. The Eg calculated from diffuse reflectance spectroscopy (DRS) UV-vis are more diverse in ZnO- and AZO-Si than the ZnO- and AZO-glass samples, although in both sets the Eg tend to converge after annealing 600 °C. The Raman spectra of samples show multiphonon processes of higher order from the AZO and substrates. It is found that residual stresses are related to E2 Raman mode.

  2. Temperature-dependent Study of Isobutanol Decomposition

    DTIC Science & Technology

    2012-11-01

    conventional petrol becomes increasingly more fervent. New legislations and pressure is being forced on the fuel industry to reduce America’s dependence on...A. R.; Sakai, S.; Devasher, R. B. Time Resolved FTIR Analysis of Combustion of Ethanol, E85, and Gasoline in an Internal Combustion Engine . Rose

  3. Titanium Oxide Adhesion Layer for High Temperature Annealed Si/Si3N4/TiO x /Pt/LiCoO2 Battery Structures

    NASA Astrophysics Data System (ADS)

    Vieira, E. M. F.; Ribeiro, J. F.; Sousa, R.; Silva, M. M.; Dupont, L.; Gonçalves, L. M.

    2016-02-01

    This work describes the influence of a high annealing temperature of about 700°C on the Si(substrate)/Si3N4/TiO x /Pt/LiCoO2 multilayer system for the fabrication of all-solid-state lithium ion thin film microbatteries. Such micro-batteries typically utilize lithium cobalt oxide (LiCoO2) as cathode material with a platinum (Pt) current collector. Silicon nitride (Si3N4) is used to act as a barrier against Li diffusion into the substrate. For a good adherence between Si3N4 and Pt, commonly titanium (Ti) is used as intermediate layer. However, to achieve crystalline LiCoO2 the multilayer system has to be annealed at high temperature. This post-treatment initiates Ti diffusion into the Pt-collector and an oxidation to TiO x , leading to volume expansion and adhesion failures. To solve this adhesion problem, we introduce titanium oxide (TiO x ) as an adhesion layer, avoiding the diffusion during the annealing process. LiCoO2, Pt and Si3N4 layers were deposited by magnetron sputtering and the TiO x layer by thermal oxidation of Ti layers deposited by e-beam technique. As-deposited and annealed multilayer systems using various TiO x layer thicknesses were studied by scanning electron microscopy (SEM) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) and x-ray photoelectron spectroscopy (XPS). The results revealed that an annealing process at temperature of 700°C leads to different interactions of Ti atoms between the layers, for various TiO x layer thicknesses (25-45 nm).

  4. The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system

    NASA Astrophysics Data System (ADS)

    Ahmed, A. M.; Mohamed, Abd El-Mo'ez A.; Mohamed, H. F.; Diab, A. K.; Mohamed, Aml M.; Mazen, A. E. A.

    2016-09-01

    This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La0.7Ba0.3MnO3)1-x/(NiO)x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La0.7Ba0.3MnO3, in contrast to (La0.7Ba0.3MnO3)0.9/(NiO)0.1 composite.

  5. Temperature dependent terahertz properties of energetic materials

    NASA Astrophysics Data System (ADS)

    Azad, Abul K.; Whitley, Von H.; Brown, Kathryn E.; Ahmed, Towfiq; Sorensen, Christian J.; Moore, David S.

    2016-04-01

    Reliable detection of energetic materials is still a formidable challenge which requires further investigation. The remote standoff detection of explosives using molecular fingerprints in the terahertz spectral range has been an evolving research area for the past two decades. Despite many efforts, identification of a particular explosive remains difficult as the spectral fingerprints often shift due to the working conditions of the sample such as temperature, crystal orientation, presence of binders, etc. In this work, we investigate the vibrational spectrum of energetic materials including RDX, PETN, AN, and 1,3-DNB diluted in a low loss PTFE host medium using terahertz time domain spectroscopy (THz-TDS) at cryogenic temperatures. The measured absorptions of these materials show spectral shifts of their characteristic peaks while changing their operating temperature from 300 to 7.5 K. We have developed a theoretical model based on first principles methods, which is able to predict most of the measured modes in 1, 3-DNB between 0.3 to 2.50 THz. These findings may further improve the security screening of explosives.

  6. TEM and EELS characterization of a Sr2CuO3+δ superconductor post-annealed at different temperatures: enhancement of Tc by apical oxygen reordering

    NASA Astrophysics Data System (ADS)

    Yang, H.; Liu, Q. Q.; Li, F. Y.; Jin, C. Q.; Yu, R. C.

    2007-10-01

    A 75 K Sr2CuO3+δ superconductor (nominal δ = 0.4), detected to be a K2NiF4-type tetragonal single phase from x-ray powder diffraction (XRD) data, was annealed in a N2 atmosphere at different temperatures, and with raising the annealing temperature, the superconducting transition temperature (Tc) is found to increase from 75 K (as-prepared), in turn, to 89 K (post-annealed at 150 °C), 95 K (post-annealed at 250 °C), and then to disappear when further increasing the annealing temperature above 250 °C. Transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) techniques are utilized to characterize both as-prepared and post-annealed samples in order to further identify the superconducting phases. TEM investigations reveal that almost all grains in the as-prepared sample exhibit modulated structures having the K2NiF4-type tetragonal structure of Sr2CuO3+δ as their basic substructure, and two types of modulated phase, i.e., Fmmm modulated phase (a \\approx b=5\\sqrt 2 a_{p} and c = cp) and C 2/m modulated phase (a=5\\sqrt 2 a_{p} , b = cp, c=\\sqrt {26} \\sqrt 2 /2a_{p} and β = 101.3°), are found in the sample. With increasing annealing temperature, successive structure phase transitions starting from the C 2/m modulated phase are observed, i.e., C 2/m modulated phase \\to Cmmm modulated phase (a = cp, b=5\\sqrt 2 a_{p} and c=5\\sqrt 2 a_{p} ) (annealed at 150 °C) \\to Pmmm modulated phase (a \\approx b=4\\sqrt 2 a_{p} and c = cp) (annealed at 250 °C) \\to unmodulated orthorhombic structure (annealed at 350 °C), while no obvious changes are found for the Fmmm modulated phase up to 250 °C. The experimental results strongly suggest that the C 2/m modulated phase is responsible for Tc at 75 K, the Cmmm modulated phase for Tc at 89 K, and the Pmmm modulated phase for Tc at 95 K, while the Fmmm modulated phase is nonsuperconducting. The absence of superconductivity in the Fmmm modulated phase can be explained by the oxygen vacancies

  7. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

    NASA Astrophysics Data System (ADS)

    Miyake, Hideto; Lin, Chia-Hung; Tokoro, Kenta; Hiramatsu, Kazumasa

    2016-12-01

    The annealing of sputtered AlN films with different thicknesses grown on sapphire in nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were overlapped ;face-to-face; to suppress the thermal decomposition of the AlN films. The sputtered AlN films with small grains consisted of columnar structure were initially aligned with (0002) orientation but became slightly inclined with increasing film thickness resulting in the formation of a two-layer structure. After annealing, films became a single crystalline layer regardless of the film thickness, and their crystallinity markedly improved after annealing at 1600-1700 °C. The full widths at half maximum of the (0002)- and (10 1 bar2)-plane X-ray rocking curves were improved to 49 and 287 arcsec, respectively, owing to the annihilation of domain boundaries in the sputtered AlN films, which concurrently increased the compressive stress in the films.

  8. Temperature dependence of the internal friction of polycrystalline indium

    NASA Astrophysics Data System (ADS)

    Sapozhnikov, K. V.; Golyandin, S. N.; Kustov, S. B.

    2010-12-01

    The temperature dependences of the internal friction and the elastic modulus of polycrystalline indium have been investigated in the temperature range 7-320 K at oscillatory loading frequencies of approximately 100 kHz. The effect of temperature on the amplitude dependence and the effect of high-amplitude loading at 7 K on the temperature and amplitude dependences of the internal friction of indium have been analyzed. It has been demonstrated that the thermocycling leads to microplastic deformation of indium due to the anisotropy of thermal expansion and the appearance of a "recrystallization" maximum in the spectrum of the amplitude-dependent internal friction. The conclusion has been drawn that the bulk diffusion of vacancies and impurities begins at temperatures of approximately 90 K and that, at lower temperatures, the diffusion occurs in the vicinity of dislocations. It has been revealed that the high-temperature internal friction background becomes noticeable after the dissolution of Cottrell atmospheres.

  9. Temperature Dependence of Diffusion and Reaction at a Pd/SiC Contact

    NASA Technical Reports Server (NTRS)

    Shi, D.T.; Lu, W. J.; Bryant, E.; Elshot, K.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

    1998-01-01

    Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, emphasis has been put on the understanding of changes of physical and chemical properties of the Schottky diodes with variation of temperature. Schottky diodes were made by depositing ultra-thin palladium films onto silicon carbide substrates. The electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of RT-400 C. However, both palladium diffused into SiC and silicon migrated into palladium thin film as well as onto surface were observed at room temperature. The formation of palladium compounds at the Pd/SiC interface was also observed. Both diffusion and reaction at the Pd/SiC interface became significant at 300 C and higher temperature. In addition, silicon oxide was found also at the interface of the Pd/SiC contact at high temperature. In this report, the mechanism of diffusion and reaction at the Pd/SiC interface will be discussed along with experimental approaches.

  10. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

    NASA Astrophysics Data System (ADS)

    Fukuyama, Hiroyuki; Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa

    2016-05-01

    The N2-CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal-organic vapor phase epitaxy method. The AlN layers were annealed in N2 and/or N2-CO gas atmosphere at 1923-1973 K for 0.5-4 h. Many pits and voids were observed on the AlN surface annealed in N2 atmosphere at 1973 K for 2 h. The rough surface was, however, much improved for the AlN annealed in N2-CO gas atmosphere. The thermodynamic principle of the N2-CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al2O3-AlN-C-N2-CO system. Voids and γ-aluminum oxynitride (γ-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, γ-AlON, and sapphire are presented, and misfits among them are discussed.

  11. Temperature dependent heterogeneous rotational correlation in lipids

    NASA Astrophysics Data System (ADS)

    Dadashvand, Neda; Othon, Christina M.

    2016-12-01

    Lipid structures exhibit complex and highly dynamic lateral structure; and changes in lipid density and fluidity are believed to play an essential role in membrane targeting and function. The dynamic structure of liquids on the molecular scale can exhibit complex transient density fluctuations. Here the lateral heterogeneity of lipid dynamics is explored in free standing lipid monolayers. As the temperature is lowered the probes exhibit increasingly broad and heterogeneous rotational correlation. This increase in heterogeneity appears to exhibit a critical onset, similar to those observed for glass forming fluids. We explore heterogeneous relaxation in in a single constituent lipid monolayer of 1, 2-dimyristoyl-sn-glycero-3-phosphocholine by measuring the rotational diffusion of a fluorescent probe (1-palmitoyl-2-[1]-sn-glycero-3-phosphocholine), which is embedded in the lipid monolayer at low labeling density. Dynamic distributions are measured using wide-field time-resolved fluorescence anisotropy. The observed relaxation exhibits a narrow, liquid-like distribution at high temperatures (τ ˜ 2.4 ns), consistent with previous experimental measures (Dadashvand et al 2014 Struct. Dyn. 1 054701, Loura and Ramalho 2007 Biochim. Biophys. Acta 1768 467-478). However, as the temperature is quenched, the distribution broadens, and we observe the appearance of a long relaxation population (τ ˜ 16.5 ns). This supports the heterogeneity observed for lipids at high packing densities, and demonstrates that the nanoscale diffusion and reorganization in lipid structures can be significantly complex, even in the simplest amorphous architectures. Dynamical heterogeneity of this form can have a significant impact on the organization, permeability and energetics of lipid membrane structures.

  12. Temperature dependent heterogeneous rotational correlation in lipids.

    PubMed

    Dadashvand, Neda; Othon, Christina M

    2016-11-15

    Lipid structures exhibit complex and highly dynamic lateral structure; and changes in lipid density and fluidity are believed to play an essential role in membrane targeting and function. The dynamic structure of liquids on the molecular scale can exhibit complex transient density fluctuations. Here the lateral heterogeneity of lipid dynamics is explored in free standing lipid monolayers. As the temperature is lowered the probes exhibit increasingly broad and heterogeneous rotational correlation. This increase in heterogeneity appears to exhibit a critical onset, similar to those observed for glass forming fluids. We explore heterogeneous relaxation in in a single constituent lipid monolayer of 1, 2-dimyristoyl-sn-glycero-3-phosphocholine  by measuring the rotational diffusion of a fluorescent probe (1-palmitoyl-2-[1]-sn-glycero-3-phosphocholine), which is embedded in the lipid monolayer at low labeling density. Dynamic distributions are measured using wide-field time-resolved fluorescence anisotropy. The observed relaxation exhibits a narrow, liquid-like distribution at high temperatures (τ ∼ 2.4 ns), consistent with previous experimental measures (Dadashvand et al 2014 Struct. Dyn. 1 054701, Loura and Ramalho 2007 Biochim. Biophys. Acta 1768 467-478). However, as the temperature is quenched, the distribution broadens, and we observe the appearance of a long relaxation population (τ ∼ 16.5 ns). This supports the heterogeneity observed for lipids at high packing densities, and demonstrates that the nanoscale diffusion and reorganization in lipid structures can be significantly complex, even in the simplest amorphous architectures. Dynamical heterogeneity of this form can have a significant impact on the organization, permeability and energetics of lipid membrane structures.

  13. Temperature-dependent fluorescence in nanodiamonds

    NASA Astrophysics Data System (ADS)

    Su, Li-Xia; Lou, Qing; Zang, Jin-Hao; Shan, Chong-Xin; Gao, Yuan-Fei

    2017-02-01

    Here, we report that nanodiamonds (NDs) exhibit blue fluorescence with an emission peak at around 400 nm. With increasing temperature, the peak energy of fluorescence was found to demonstrate a blue shift, possibly due to excited excitons populating higher-energy states, such as oxidation defect states. The intensity evolution of the fluorescence was attributed to a thermally activated process. Moreover, the bandwidth of fluorescence also increased because of exciton–phonon interactions and ionized impurity scattering. The above results indicate that the fluorescence of NDs could originate from radiative recombination through intrinsic transitions between highly localized π states.

  14. Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates

    SciTech Connect

    Wegele, Tatjana; Beyer, Andreas; Gies, Sebastian; Zimprich, Martin; Heimbrodt, Wolfram; Stolz, Wolfgang; Volz, Kerstin

    2016-01-14

    Ga(NAsP) quantum wells grown pseudomorphically on Si substrate are promising candidates for optically active light sources in future optoelectronically integrated circuits on Si substrates. As the material is typically grown at low temperatures, it has to be thermally annealed after growth to remove defects and optimize optoelectronic properties. Here we show by quantitative transmission electron microscopy that two different kinds of structural development are associated with the annealing. First of all, the quantum well homogeneity improves with increasing annealing temperature. For annealing temperatures above 925 °C the composition becomes less homogeneous again. Second, voids form in the quantum well for annealing temperatures above 850 °C. Their density and size increase continuously with increasing annealing temperature. These results are correlated to the optical properties of the samples, where we find from temperature-dependent photoluminescence measurements two scales of disorder, which show the same temperature dependence as the structural properties.

  15. Temperature dependence of heterogeneous nucleation: Extension of the Fletcher model

    NASA Astrophysics Data System (ADS)

    McGraw, Robert; Winkler, Paul; Wagner, Paul

    2015-04-01

    Recently there have been several cases reported where the critical saturation ratio for onset of heterogeneous nucleation increases with nucleation temperature (positive slope dependence). This behavior contrasts with the behavior observed in homogeneous nucleation, where a decreasing critical saturation ratio with increasing nucleation temperature (negative slope dependence) seems universal. For this reason the positive slope dependence is referred to as anomalous. Negative slope dependence is found in heterogeneous nucleation as well, but because so few temperature-dependent measurements have been reported, it is not presently clear which slope condition (positive or negative) will become more frequent. Especially interesting is the case of water vapor condensation on silver nanoparticles [Kupc et al., AS&T 47: i-iv, 2013] where the critical saturation ratio for heterogeneous nucleation onset passes through a maximum, at about 278K, with higher (lower) temperatures showing the usual (anomalous) temperature dependence. In the present study we develop an extension of Fletcher's classical, capillarity-based, model of heterogeneous nucleation that explicitly resolves the roles of surface energy and surface entropy in determining temperature dependence. Application of the second nucleation theorem, which relates temperature dependence of nucleation rate to cluster energy, yields both necessary and sufficient conditions for anomalous temperature behavior in the extended Fletcher model. In particular it is found that an increasing contact angle with temperature is a necessary, but not sufficient, condition for anomalous temperature dependence to occur. Methods for inferring microscopic contact angle and its temperature dependence from heterogeneous nucleation probability measurements are discussed in light of the new theory.

  16. Crossing regimes of temperature dependence in animal movement.

    PubMed

    Gibert, Jean P; Chelini, Marie-Claire; Rosenthal, Malcolm F; DeLong, John P

    2016-05-01

    A pressing challenge in ecology is to understand the effects of changing global temperatures on food web structure and dynamics. The stability of these complex ecological networks largely depends on how predator-prey interactions may respond to temperature changes. Because predators and prey rely on their velocities to catch food or avoid being eaten, understanding how temperatures may affect animal movement is central to this quest. Despite our efforts, we still lack a mechanistic understanding of how the effect of temperature on metabolic processes scales up to animal movement and beyond. Here, we merge a biomechanical approach, the Metabolic Theory of Ecology and empirical data to show that animal movement displays multiple regimes of temperature dependence. We also show that crossing these regimes has important consequences for population dynamics and stability, which depend on the parameters controlling predator-prey interactions. We argue that this dependence upon interaction parameters may help explain why experimental work on the temperature dependence of interaction strengths has so far yielded conflicting results. More importantly, these changes in the temperature dependence of animal movement can have consequences that go well beyond ecological interactions and affect, for example, animal communication, mating, sensory detection, and any behavioral modality dependent on the movement of limbs. Finally, by not taking into account the changes in temperature dependence reported here we might not be able to properly forecast the impact of global warming on ecological processes and propose appropriate mitigation action when needed.

  17. TEMPERATURE DEPENDENCE OF THE ANTIFERROMAGNETIC ANISOTROPY IN MNF2,

    DTIC Science & Technology

    Existing data on the temperature dependence of the sublattice magnetization and of the antiferromagnetic resonance frequency of MnF2, together with...new antiferromagnetic resonance data, are used to determine the temperature dependence of the antiferromagnetic anisotropy energy. The experimental

  18. The Temperature Dependence of the Viscosity of Simple Liquids,

    DTIC Science & Technology

    The purpose of the work is investigation of the temperature dependence of the viscosity of simple liquids on the basis of the molecular-kinetic...theory. In literature there is vast experimental material on the investigation of the viscosity of liquids and its temperature dependence both based on the

  19. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    NASA Astrophysics Data System (ADS)

    Kumar, Narendra; Kumar, Jitendra; Panda, Siddhartha

    2015-06-01

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  20. Enhancement of dye-sensitized solar cell efficiency using carbon nanotube/TiO2 nanocomposite thin films fabricated at various annealing temperatures

    NASA Astrophysics Data System (ADS)

    Abdullah, Huda; Razali, Mohd Zikri; Shaari, Sahbudin; Taha, Mohd Raihan

    2014-05-01

    To increase energy conversion efficiency of dye-sensitized solar cells (DSSCs), carbon nanotubes (CNTs) were added to TiO2 gel-like solution. Modified acid-catalyzed sol-gel method was used with the doctor blade coating technique to obtain thin films of CNT/TiO2 nanocomposite photoanode. CNT/TiO2 paste was applied onto the conductive glass to generate a 0.25 cm2 active area which was later annealed at 350°C, 450°C, and 550°C for 60 min. Characterization of the CNT/TiO2 paste was performed using x-ray diffraction. Results showed that the crystalline phase of the particles was anatase. The micrograph obtained using field emission scanning electron microscopy demonstrated that the pastes are highly porous. Brunauer-Emmett-Teller analysis was performed to determine the CNT/TiO2 surface area and particle size. The DSSC with the CNT/TiO2 photoanodes annealed at 550°C showed the highest incident photon-to-charge carrier efficiency value of 0.95% compared with the DSSCs with photoanodes annealed at 350°C and 450°C (0.70% and 0.83%, respectively). The observed efficiencies of the DSSCs with CNT/TiO2 photoanode annealed at the three different temperatures were 2.62%, 2.65%, and 3.13%. The electrochemical impedance spectroscopy analysis showed that the DSSCs with photoanodes developed using the highest annealing temperature (550°C) have higher electron lifetime of 70.423 ms and lower effective recombination rate of 1.42 × 10-2 s-1, thereby improving the performance of CNT/TiO2 DSSCs.

  1. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    SciTech Connect

    Kumar, Narendra; Kumar, Jitendra; Panda, Siddhartha

    2015-06-15

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO{sub 2}/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 {sup o}C in N{sub 2} ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 {sup o}C. The increased pH sensitivity with the film annealed at 400 {sup o}C in N{sub 2} gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 {sup o}C was attributed to defects in the films as well as the induced traps at the IGZO/SiO{sub 2} interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  2. Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing

    NASA Astrophysics Data System (ADS)

    Komissarova, T. A.; Lebedev, M. V.; Sorokin, S. V.; Klimko, G. V.; Sedova, I. V.; Gronin, S. V.; Komissarov, K. A.; Calvet, W.; Drozdov, M. N.; Ivanov, S. V.

    2017-04-01

    A study of electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces (HI) in dependence on molecular beam epitaxy (MBE) growth conditions and post-growth annealing was performed. Initial GaAs surface reconstructions ((2 × 4)As or c(4 × 4)As) and ZnSe growth mode (MBE or migration-enhanced epitaxy (MEE)) were varied for different undoped and n-doped heterovalent structures. Although all the structures have low extended defect density (less than 106 cm‑2) and rather small (less than 5 nm) atomic interdiffusion at the HI, the structural, chemical and electronic properties of the near-interface area (short-distance interdiffusion effects, dominant chemical bonds, and valence band offset values) as well as electrical properties of the n-GaAs/n-ZnSe heterovalent structures were found to be influenced strongly by the MBE growth conditions and post-growth annealing.

  3. Two- and multi-step annealing of cereal starches in relation to gelatinization.

    PubMed

    Shi, Yong-Cheng

    2008-02-13

    Two- and multi-step annealing experiments were designed to determine how much gelatinization temperature of waxy rice, waxy barley, and wheat starches could be increased without causing a decrease in gelatinization enthalpy or a decline in X-ray crystallinity. A mixture of starch and excess water was heated in a differential scanning calorimeter (DSC) pan to a specific temperature and maintained there for 0.5-48 h. The experimental approach was first to anneal a starch at a low temperature so that the gelatinization temperature of the starch was increased without causing a decrease in gelatinization enthalpy. The annealing temperature was then raised, but still was kept below the onset gelatinization temperature of the previously annealed starch. When a second- or third-step annealing temperature was high enough, it caused a decrease in crystallinity, even though the holding temperature remained below the onset gelatinization temperature of the previously annealed starch. These results support that gelatinization is a nonequilibrium process and that dissociation of double helices is driven by the swelling of amorphous regions. Small-scale starch slurry annealing was also performed and confirmed the annealing results conducted in DSC pans. A three-phase model of a starch granule, a mobile amorphous phase, a rigid amorphous phase, and a crystalline phase, was used to interpret the annealing results. Annealing seems to be an interplay between a more efficient packing of crystallites in starch granules and swelling of plasticized amorphous regions. There is always a temperature ceiling that can be used to anneal a starch without causing a decrease in crystallinity. That temperature ceiling is starch-specific, dependent on the structure of a starch, and is lower than the original onset gelatinization of a starch.

  4. Temperature Dependence of the Magnetization of the Ni52Mn24Ga24 Alloy in Various Structural States

    NASA Astrophysics Data System (ADS)

    Musabirov, I. I.; Sharipov, I. Z.; Mulyukov, R. R.

    2015-10-01

    are presented of a study of the temperature dependence of the magnetization σ(Т) of the polycrystalline Ni52Mn24Ga24 alloy in various structural states: in the initial coarse-grained state, after severe plastic deformation by high pressure torsion, and after stepped annealing of the deformed specimen at temperatures from 200 to 700°С for 30 min. As a study of the σ(Т) curve shows, in an alloy possessing a coarse-grained initial structure, a martensitic phase transition and a magnetic phase transition are observed in the room temperature interval. The martensitic transformation takes place in the ferromagnetic state of the alloy. This transformation is accompanied by an abrupt lowering of the magnetization of the material, associated with a lowering of the symmetry of the crystalline lattice and a high value of the magnetocrystalline anisotropy constant of the alloy in the martensitic phase. It is shown that as a result of plastic deformation there takes place a destruction of ferromagnetic order and a suppression of the martensitic transformation. Consecutive annealing after deformation leads to a gradual recovery of ferromagnetic order and growth of the magnetization of the material. Recovery of the martensitic transformation begins to be manifested only after annealing of the alloy at a temperature of 500°C, when the mean grain size in the recrystallized structure reaches a value around 1 μm.

  5. Effect of synthesis methods with different annealing temperatures on micro structure, cations distribution and magnetic properties of nano-nickel ferrite

    NASA Astrophysics Data System (ADS)

    El-Sayed, Karimat; Mohamed, Mohamed Bakr; Hamdy, Sh.; Ata-Allah, S. S.

    2017-02-01

    Nano-crystalline NiFe2O4 was synthesized by citrate and sol-gel methods at different annealing temperatures and the results were compared with a bulk sample prepared by ceramic method. The effect of methods of preparation and different annealing temperatures on the crystallize size, strain, bond lengths, bond angles, cations distribution and degree of inversions were investigated by X-ray powder diffraction, high resolution transmission electron microscope, Mössbauer effect spectrometer and vibrating sample magnetometer. The cations distributions were determined at both octahedral and tetrahedral sites using both Mössbauer effect spectroscopy and a modified Bertaut method using Rietveld method. The Mössbauer effect spectra showed a regular decrease in the hyperfine field with decreasing particle size. Saturation magnetization and coercivity are found to be affected by the particle size and the cations distribution.

  6. Impact of Annealing Temperature on the Phase of CZTS with the Variation in Surface Morphological Changes and Extraction of Optical Bandgap

    NASA Astrophysics Data System (ADS)

    Raiguru, J.; Subramanyam, BVRS; Sa, K.; Alam, I.; Das, S.; Mukherjee, J.; Mahakul, P. C.; Subudhi, B.; Mahanandia, P.

    2017-02-01

    Quaternary CZTS (Cu2ZnSnS4) is an emerging alternative semiconductor material for solar cell technologies due to its earth abundancy, low cost and non-toxic nature. In addition, CZTS has a direct band gap of ∼1.5 eV which is the optimal value for converting the maximum amount of energy from the solar spectrum into electricity. The aim of the present study is to investigate the impacts of annealing temperature on the phase formation and morphological behavior of CZTS and material optical characteristics. X-ray Diffraction (XRD) reveals the single phase of kesterite CZTS that has been grown from the material precursors. Scanning electron microscope (SEM) shows the variation of morphological changes of CZTS with respect to annealing temperature. UV-Vis analysis confirms the optical band gap of 1.5 eV in the visible region which is suitable for photovoltaic applications.

  7. Effective reduction of trap density at the Y{sub 2}O{sub 3}/Ge interface by rigorous high-temperature oxygen annealing

    SciTech Connect

    Bethge, O. Zimmermann, C.; Lutzer, B.; Simsek, S.; Smoliner, J.; Bertagnolli, E.; Stöger-Pollach, M.; Henkel, C.

    2014-12-07

    The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y{sub 2}O{sub 3} interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H{sub 2}O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 × 10{sup 11} eV{sup −1 }cm{sup −2} were achieved by oxygen annealing at high temperatures (550 °C–600 °C). The good interface quality is most likely driven by the growth of interfacial GeO{sub 2} and thermally stabilizing yttrium germanate.

  8. Effect of the sample annealing temperature and sample crystallographic orientation on the charge kinetics of MgO single crystals subjected to keV electron irradiation.

    PubMed

    Boughariou, A; Damamme, G; Kallel, A

    2015-04-01

    This paper focuses on the effect of sample annealing temperature and crystallographic orientation on the secondary electron yield of MgO during charging by a defocused electron beam irradiation. The experimental results show that there are two regimes during the charging process that are better identified by plotting the logarithm of the secondary electron emission yield, lnσ, as function of the total trapped charge in the material QT. The impact of the annealing temperature and crystallographic orientation on the evolution of lnσ is presented here. The slope of the asymptotic regime of the curve lnσ as function of QT, expressed in cm(2) per trapped charge, is probably linked to the elementary cross section of electron-hole recombination, σhole, which controls the trapping evolution in the reach of the stationary flow regime.

  9. Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions

    SciTech Connect

    Sobolev, N. A. Danilov, D. V.; Aleksandrov, O. V.; Loshachenko, A. S.; Sakharov, V. I.; Serenkov, I. T.; Shek, E. I.; Trapeznikova, I. N.

    2015-03-15

    It is found that the implantation of silicon with oxygen ions and subsequent annealing at high temperatures are accompanied by the formation of electrically active donor centers and by the p-n conversion of the conductivity of silicon. The concentration and spatial distribution of these centers depend on the annealing temperature. The results are accounted for by the interaction of oxygen atoms with intrinsic point defects formed upon the annealing of implantation damages.

  10. Selecting temperature for protein crystallization screens using the temperature dependence of the second virial coefficient.

    PubMed

    Liu, Jun; Yin, Da-Chuan; Guo, Yun-Zhu; Wang, Xi-Kai; Xie, Si-Xiao; Lu, Qin-Qin; Liu, Yong-Ming

    2011-03-30

    Protein crystals usually grow at a preferable temperature which is however not known for a new protein. This paper reports a new approach for determination of favorable crystallization temperature, which can be adopted to facilitate the crystallization screening process. By taking advantage of the correlation between the temperature dependence of the second virial coefficient (B(22)) and the solubility of protein, we measured the temperature dependence of B(22) to predict the temperature dependence of the solubility. Using information about solubility versus temperature, a preferred crystallization temperature can be proposed. If B(22) is a positive function of the temperature, a lower crystallization temperature is recommended; if B(22) shows opposite behavior with respect to the temperature, a higher crystallization temperature is preferred. Otherwise, any temperature in the tested range can be used.

  11. Effect of annealing temperature on structural and electrical properties of high-κ YbTixOy gate dielectrics for InGaZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Pan, Tung-Ming; Chen, Fa-Hsyang; Hung, Meng-Ning

    2015-01-01

    This paper describes the effect of annealing temperature on the structural properties and electrical characteristics of high-κ YbTixOy gate dielectrics for indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). X-ray diffraction, x-ray photoelectron spectroscopy and atomic force microscopy were used to study the structural, chemical and morphological features, respectively, of these dielectric films annealed at 200, 300 and 400 °C. The YbTixOy IGZO TFT that had been annealed at 400 °C exhibited better electrical characteristics, such as a small threshold voltage of 0.53 V, a large field-effect mobility of 19.1 cm2 V-1 s-1, a high Ion/Ioff ratio of 2.8 × 107, and a low subthreshold swing of 176 mV dec.-1, relative to those of the systems that had been subjected to other annealing conditions. This result suggests that YbTixOy dielectric possesses a higher dielectric constant as well as lower oxygen vacancies (or defects) in the film. In addition, the instability of YbTixOy IGZO TFT was studied under positive gate-bias stress and negative gate-bias stress conditions.

  12. Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Li, S. S.; Chiu, T. T.; Loo, R. Y.

    1981-01-01

    The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

  13. Effect of δ-ferrite evolution and high-temperature annealing on mechanical properties of 11Cr3W3Co ferritic/martensitic steel

    NASA Astrophysics Data System (ADS)

    Shang, Zhongxia; Shen, Yinzhong; Ji, Bo; Zhang, Lanting

    2016-03-01

    An 11Cr3W3Co ferritic/martensitic steel was annealed at 1100 °C for different time to gradually dissolve δ-ferrite, and then conducted tensile, hardness, and short-term creep tests in combination with microstructural characterization to study the effect of δ-ferrite on the mechanical properties of high-Cr ferritic/martensitic steels. The amount of δ-ferrite gradually decreased to a minimum value with increasing annealing time up to 10 h, and then tended to an ascending tendency when annealed for 15 and 20 h. Accordingly the tensile strength at 300 and 650 °C, and Vickers hardness of the steel had an increase and a decrease tendency when δ-ferrite amount decreased down to its minimum value and increased again, respectively. The short-term creep property at 210 MPa at 650 °C of the steel exhibited a serious degradation as annealing time gradually increased to 15 h. The morphology and orientation of δ-ferrite grains seriously affected the short-term creep property of the steel. δ-ferrite with a continuously bamboo-like shape parallel to loading direction effectively improved the short-term creep property of the steel at high temperature, while δ-ferrite with a granular or block shape seriously damaged the short-term creep property of the steel. These findings have also been discussed.

  14. Temperature dependence of the excited state absorption of alexandrite

    SciTech Connect

    Shand, M.L.; Jenssen, H.P.

    1983-03-01

    The temperature dependence from 28 to 290/sup 0/C of the excited-state absorption cross section sigma /SUB 2a/ (E) in the gain wavelength region of alexandrite has been determined from the temperature dependence of the single pass gain (SPG) and of the fluorescence. sigma /SUB 2a/ (E) and the emission cross section increase with temperature at approximately the same rate.

  15. Effect of annealing on the microwave characteristics of carbon nanotubes and the nanocomposite materials based on them

    NASA Astrophysics Data System (ADS)

    Usanov, D. A.; Skripal', A. V.; Romanov, A. V.

    2014-06-01

    Transmission and reflection spectra of electromagnetic microwave radiation are used to determine the complex permittivity of the composite materials consisting of a dielectric matrix and multiwalled carbon nanotubes subjected to high-temperature annealing in an inert atmosphere. The dependence of the electrical conductivity of multiwalled carbon nanotubes on the annealing temperature in an inert atmosphere is shown to be nonmonotonic.

  16. Temperature dependence of DNA condensation at high ionic concentration

    NASA Astrophysics Data System (ADS)

    Mao, Wei; Gao, Qingqing; Liu, Yanhui; Fan, Yangtao; Hu, Lin; Xu, Houqiang

    2016-08-01

    A series of experiments pointed out that compact states of DNA condensed by multivalent cation prefer higher temperature. The condensed DNA takes elongated coil or compact globule states and the population of the compact globule states increases with an increase in temperature. At the same time, a recent experimental work carried out in buffer solution without multivalent cation points out that DNA persistence length strongly depends on the temperature. DNA persistence length is a key parameter for quantitative interpretation of the conformational properties of DNA and related to the bending rigidity of DNA. It is necessary to revolve the effects of temperature dependence of persistence length on DNA condensation, and a model including the temperature dependence of persistence length and strong correlation of multivalent cation on DNA is provided. The autocorrelation function of the tangent vectors is found as an effective way to detect the temperature dependence of toroid conformations. With an increase in temperature, the first periodic oscillation in the autocorrelation function shifts left and the number of segments containing the first periodic oscillation decreases gradually. According to the experiments mentioned above, the long-axis length is defined to estimate the temperature dependence of condensation process further. At the temperatures defined in experiments mentioned above, the relation between long-axis length and temperature matches the experimental results.

  17. The effect of annealing temperature variation on the optical properties test of LiTaO3 thin films based on Tauc Plot method for satellite technology

    NASA Astrophysics Data System (ADS)

    Djohan, N.; Estrada, R.; Sari, D.; Dahrul, M.; Kurniawan, A.; Iskandar, J.; Hardhienata, H.; Irzaman

    2017-01-01

    The purpose of the present research is to observe the energy gap of thin films made from LiTaO3 in 1 M-solubility deposited on n-type Si (111) substrates with annealing temperature variation. The manufacture of thin films has been formed by Chemical Solution Deposition (CSD) method using spin coater on 3000 rpm speed for 30 seconds and performed annealing process using furnace (Nabertherm type B180) at a temperature of 750°C, 800°C and 850°C for 15 hours. The absorbance of thin films is measured by using an Ocean Optics USB2000 device and processed into the energy gap curve using Tauc Plot method. The result shows that the energy gap of thin films associated with indirect transitions are increased from 2.78 eV to 2.93 eV with the rise of annealing temperature. The research shows that the thin films on n-type Si (111) substrates made of LiTaO3 produces sensitivity to violet light spectrum and have the potential to be developed as a sensor on satellite technology.

  18. Effects of Intercritical Annealing Temperature on Mechanical Properties of Fe-7.9Mn-0.14Si-0.05Al-0.07C Steel

    SciTech Connect

    Zhao, Xianming; Shen, Yongfeng; Qiu, Lina; Liu, Yandong; Sun, Xin; Zuo, Liang

    2014-12-09

    A medium Mn steel has been designed to achieve an excellent combination of strength and ductility based on the TRIP (Transformation Induced Plasticity) concept for automotive applications. Following six passes of hot rolling at 850 °C, the Fe-7.9Mn-0.14Si-0.05Al-0.07C (wt.%) steel was warm-rolled at 630 °C for seven passes and subsequently air cooled to room temperature. The sample was subsequently intercritically annealed at various temperatures for 30 min to promote the reverse transformation of martensite into austenite. The obtained results show that the highest volume fraction of austenite is 39% for the sample annealed at 600 °C. This specimen exhibits a yield stress of 910 MPa and a high ultimate tensile stress of 1600 MPa, with an elongation-to-failure of 0.29 at a strain rate of 1 × 10⁻³/s. The enhanced work-hardening ability of the investigated steel is closely related to martensitic transformation and the interaction of dislocations. Especially, the alternate arrangement of acicular ferrite (soft phase) and ultrafine austenite lamellae (50–200 nm, strong and ductile phase) is the key factor contributing to the excellent combination of strength and ductility. On the other hand, the as-warm-rolled sample also exhibits the excellent combination of strength and ductility, with elongation-to-failure much higher than those annealed at temperatures above 630 °C.

  19. Temperature dependence of the zeta potential in intact natural carbonates

    NASA Astrophysics Data System (ADS)

    Al Mahrouqi, Dawoud; Vinogradov, Jan; Jackson, Matthew D.

    2016-11-01

    The zeta potential is a measure of the electrical charge on mineral surfaces and is an important control on subsurface geophysical monitoring, adsorption of polar species in aquifers, and rock wettability. We report the first measurements of zeta potential in intact, water-saturated, natural carbonate samples at temperatures up to 120°C. The zeta potential is negative and decreases in magnitude with increasing temperature at low ionic strength (0.01 M NaCl, comparable to potable water) but is independent of temperature at high ionic strength (0.5 M NaCl, comparable to seawater). The equilibrium calcium concentration resulting from carbonate dissolution also increases with increasing temperature at low ionic strength but is independent of temperature at high ionic strength. The temperature dependence of the zeta potential is correlated with the temperature dependence of the equilibrium calcium concentration and shows a Nernstian linear relationship. Our findings are applicable to many subsurface carbonate rocks at elevated temperature.

  20. Simulated annealing versus quantum annealing

    NASA Astrophysics Data System (ADS)

    Troyer, Matthias

    Based on simulated classical annealing and simulated quantum annealing using quantum Monte Carlo (QMC) simulations I will explore the question where physical or simulated quantum annealers may outperform classical optimization algorithms. Although the stochastic dynamics of QMC simulations is not the same as the unitary dynamics of a quantum system, I will first show that for the problem of quantum tunneling between two local minima both QMC simulations and a physical system exhibit the same scaling of tunneling times with barrier height. The scaling in both cases is O (Δ2) , where Δ is the tunneling splitting. An important consequence is that QMC simulations can be used to predict the performance of a quantum annealer for tunneling through a barrier. Furthermore, by using open instead of periodic boundary conditions in imaginary time, equivalent to a projector QMC algorithm, one obtains a quadratic speedup for QMC, and achieve linear scaling in Δ. I will then address the apparent contradiction between experiments on a D-Wave 2 system that failed to see evidence of quantum speedup and previous QMC results that indicated an advantage of quantum annealing over classical annealing for spin glasses. We find that this contradiction is resolved by taking the continuous time limit in the QMC simulations which then agree with the experimentally observed behavior and show no speedup for 2D spin glasses. However, QMC simulations with large time steps gain further advantage: they ``cheat'' by ignoring what happens during a (large) time step, and can thus outperform both simulated quantum annealers and classical annealers. I will then address the question how to optimally run a simulated or physical quantum annealer. Investigating the behavior of the tails of the distribution of runtimes for very hard instances we find that adiabatically slow annealing is far from optimal. On the contrary, many repeated relatively fast annealing runs can be orders of magnitude faster for

  1. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

    NASA Astrophysics Data System (ADS)

    Wang, Yan-Rong; Yang, Hong; Xu, Hao; Wang, Xiao-Lei; Luo, Wei-Chun; Qi, Lu-Wei; Zhang, Shu-Xiang; Wang, Wen-Wu; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2015-11-01

    A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D&A) cycles, the D&A time, and the total annealing time. The results show that the increases of the number of D&A cycles (from 1 to 2) and D&A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D&A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D&A times and numbers of D&A cycles induce different breakdown mechanisms. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).

  2. Climate change and temperature-dependent sex determination in reptiles.

    PubMed

    Janzen, F J

    1994-08-02

    Despite increasing concern over the possible impact of global temperature change, there is little empirical evidence of direct temperature effects on biotic interactions in natural systems. Clear assessment of the ecological and evolutionary impact of changing climatic temperature requires a natural system in which populations exhibit a direct unambiguous fitness response to thermal fluctuation. I monitored nests of a population of painted turtles (Chrysemys picta) with temperature-dependent sex determination to investigate the causal relationship between local climatic variation in temperature and offspring sex ratio. Consistent with theoretical predictions, annual offspring sex ratio was highly correlated with mean July air temperature, validating concerns about the effect of climate change on population demography. This correlation implies that even modest increases in mean temperature (< 2 degrees C) may drastically skew the sex ratio. Statistical evaluation of the variance in climate change indicates that an increase in mean temperature of 4 degrees C would effectively eliminate production of male offspring. Quantitative genetic analyses and behavioral data suggest that populations with temperature-dependent sex determination may be unable to evolve rapidly enough to counteract the negative fitness consequences of rapid global temperature change. Populations of species with temperature-dependent sex determination may serve as ideal indicators of the biological impact of global temperature change.

  3. Stochastic annealing simulation of cascades in metals

    SciTech Connect

    Heinisch, H.L.

    1996-04-01

    The stochastic annealing simulation code ALSOME is used to investigate quantitatively the differential production of mobile vacancy and SIA defects as a function of temperature for isolated 25 KeV cascades in copper generated by MD simulations. The ALSOME code and cascade annealing simulations are described. The annealing simulations indicate that the above Stage V, where the cascade vacancy clusters are unstable,m nearly 80% of the post-quench vacancies escape the cascade volume, while about half of the post-quench SIAs remain in clusters. The results are sensitive to the relative fractions of SIAs that occur in small, highly mobile clusters and large stable clusters, respectively, which may be dependent on the cascade energy.

  4. Effects of color centers absorption on the spectrum of the temperature-dependent radiation-induced attenuation in fiber.

    PubMed

    Jin, Jing; Hou, Yunxia; Liu, Chunjing

    2015-02-01

    Spectra ranging from 800 to 1650 nm of the temperature-dependent radiation-induced attenuation (RIA) in the irradiated and sufficiently annealed fiber with germanium and phosphorous dopant has been measured. These RIA spectra were investigated based on the mechanism of color centers absorption. With the configurational coordinate model, these RIA spectra were decomposed by the absorption bands of three kinds of color centers. The effects of color centers absorption on the spectrum of temperature-dependent RIA is discussed by comparing the absorption intensity of different color centers at a same wavelength. Moreover, the temperature-dependent RIA of the fiber has been measured separately at 850, 1310, and 1550 nm. The measured results agreed well with the analysis of RIA spectra.

  5. Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Neumann, L.; Meier, D.; Schmalhorst, J.; Rott, K.; Reiss, G.; Meinert, M.

    2016-10-01

    We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The effective spin Hall angle | ΘSH eff | ≈ 0.22 is independent of temperature, whereas the switching current increases strongly at low temperature. The increase indicates that the current induced switching itself is thermally activated, in agreement with a recent theoretical prediction. The dependence of the switching current on the in-plane assist field suggests the presence of an interfacial Dzyaloshinskii-Moriya interaction with D ≈ 0.23 mJ/m2, intermediate between the Pt/CoFe and Ta/CoFe systems. We show that the nc-W(O) is insensitive to annealing, which makes this system a good choice for the integration into magnetic memory or logic devices that require a high-temperature annealing process during fabrication.

  6. Dielectric function dependence on temperature for Au and Ag

    NASA Astrophysics Data System (ADS)

    Chen, Yu-Jen; Lee, Meng-Chang; Wang, Chih-Ming

    2014-08-01

    The dielectric functions of Au and Ag are measured using a spectral ellipsometer. The temperature dependence parameters ωp, τ, and ɛ∞, in the Drude-Sommerfeld model have been studied. Furthermore, we provide an empirical function to describe the temperature dependence of the dielectric function for Au and Ag. The empirical function shows a good agreement with previous results. Through the empirical function, one can obtain the dielectric constant at arbitrary temperature and wavelength. This database is useful for the applications that use surface plasmon (SP) resonance at high temperatures, such as the plasmonic thermal emitter, SP-assisted thermal cancer treatment and so on.

  7. Temperature dependent core photoemission in Ce 24Co 11

    NASA Astrophysics Data System (ADS)

    Abbati, I.; Braicovich, L.; Michelis, B.; Fasana, A.; Olcese, G. L.; Canepa, F.; Costa, G. A.

    1985-09-01

    We present Ce 3 d photoemission results (XPS with Al Kα) in the temperature range 100-660°K. The mixed valence behaviour of Ce is very clear with an increase of the valence at lower temperature. A model analysis (of the Gunnarsson and Schönhammer type) gives the weight of the ⨍ 0 configuration equal to 0.19 at 300°K and equal to 0.23 at 100°K. This soft temperature dependence is discussed in connection with the temperature dependence of magnetic properties and with the chemistry of Ce intermetallics.

  8. Temperature dependent electrical transport of disordered reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Muchharla, Baleeswaraiah; Narayanan, T. N.; Balakrishnan, Kaushik; Ajayan, Pulickel M.; Talapatra, Saikat

    2014-06-01

    We report on the simple route for the synthesis of chemically reduced graphene oxide (rGO) using ascorbic acid (a green chemical) as a reducing agent. Temperature-dependent electrical transport properties of rGO thin films have been studied in a wide range (50 K T 400 K) of temperature. Electrical conduction in rGO thin films was displayed in two different temperature regimes. At higher temperatures, Arrhenius-like temperature dependence of resistance was observed indicating a band gap dominating transport behavior. At lower temperatures, the rGO sample showed a conduction mechanism consistent with Mott's two-dimensional variable range hopping (2D-VRH). An unsaturated negative magnetoresistance (MR) was observed up to 3 T field. A decrease in negative MR at high temperatures is attributed to the phonon scattering of charge carriers.

  9. Low-temperature (˜180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

    NASA Astrophysics Data System (ADS)

    Matsumura, Ryo; Chikita, Hironori; Kai, Yuki; Sadoh, Taizoh; Ikenoue, Hiroshi; Miyao, Masanobu

    2015-12-01

    To realize next-generation flexible thin-film devices, solid-phase crystallization (SPC) of amorphous germanium tin (GeSn) films on insulating substrates combined with seeds formed by laser annealing (LA) has been investigated. This technique enables the crystallization of GeSn at controlled positions at low temperature (˜180 °C) due to the determination of the starting points of crystallization by LA seeding and Sn-induced SPC enhancement. The GeSn crystals grown by SPC from LA seeds showed abnormal lateral profiles of substitutional Sn concentration. These lateral profiles are caused by the annealing time after crystallization being a function of distance from the LA seeds. This observation of a post-annealing effect also indicates that GeSn with a substitutional Sn concentration of up to ˜10% possesses high thermal stability. These results will facilitate the fabrication of next-generation thin-film devices on flexible plastic substrates with low softening temperatures (˜250 °C).

  10. Effect of the annealing temperature and ion-beam bombardment on the properties of solution-derived HfYGaO films as liquid crystal alignment layers

    SciTech Connect

    Park, Hong-Gyu; Lee, Yun-Gun; Jang, Sang Bok; Lee, Ju Hwan; Jeong, Hae-Chang; Seo, Dae-Shik; Oh, Byeong-Yun

    2015-11-15

    Hafnium yttrium gallium oxide (HfYGaO) films were applied to liquid crystal displays (LCDs) as liquid crystal (LC) alignment layers, replacing conventional polyimide (PI) layers. The HfYGaO alignment layers were prepared by fabricating solution-processed HfYGaO films, annealing them, and treating them with ion-beam (IB) irradiation. The authors studied the effects of annealing temperature and IB irradiation of the solution-derived HfYGaO films on the orientation of LC molecules. The LC molecules on the solution-derived HfYGaO films were homogeneously and uniformly aligned by IB irradiation, irrespective of the annealing temperature. Atomic force microscopy analyses revealed that the surface reformation of the HfYGaO films induced by IB irradiation strengthened the van der Waals force between the LC molecules and the HfYGaO films, leading to uniform LC alignment. Enhanced electro-optical characteristics were observed in the twisted-nematic (TN) LCDs based on IB-irradiated HfYGaO films compared with those of TN-LCDs based on PI layers, demonstrating the high application potential of the proposed solution-derived HfYGaO films as LC alignment layers.

  11. Shift in room-temperature photoluminescence of low-fluence Si(+)-implanted SiO2 films subjected to rapid thermal annealing.

    PubMed

    Fu, Ming-Yue; Tsai, Jen-Hwan; Yang, Cheng-Fu; Liao, Chih-Hsiung

    2008-12-01

    We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si(+) ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3×10(16) cm(-2) shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 °C) and duration (5-20 s). The reported approach of implanting silicon into SiO2 films followed by RTA may be effective for tuning Si-based photonic devices.

  12. Temperature dependence of nonlinear optical phenomena in silica glasses

    NASA Astrophysics Data System (ADS)

    Mikami, K.; Motokoshi, S.; Fujita, M.; Jitsuno, T.; Murakami, M.

    2010-11-01

    A linear increase of the laser-induced damage thresholds in silica glasses with decreasing the temperature was reported in this conference at last year. Various nonlinear phenomena should be generated in silica glasses besides the damage in high intensity. Temperature dependences of the nonlinear refractive indices and the SBS (stimulated Brillouin scattering) thresholds in silica glasses at temperature 173 K to 473 K were measured with single-mode Q-switched Nd:YAG laser at fundamental wavelength. As the result, the nonlinear refractive indices increased with decreasing temperature. Because the change was not enough to explain the temperature dependence of laser-induced damage thresholds, the temperature dependence of nonlinear refractive indices would be negligible on laser-induced damage thresholds. On the other hand, the SBS thresholds also increased with decreasing temperature. This result means that acoustic phonons arise easily at high temperature. Probably, the SBS phenomenon is one of reasons for temperature dependence of laser-induced damage thresholds.

  13. Accumulation and annealing of radiation defects under low-temperature electron and neutron irradiation of ODS steel and Fe-Cr alloys

    NASA Astrophysics Data System (ADS)

    Arbuzov, V. L.; Goshchitskii, B. N.; Sagaradze, V. V.; Danilov, S. E.; Kar'kin, A. E.

    2010-10-01

    The processes of accumulation and annealing of radiation defects at low-temperature (77 K) electron and neutron irradiation and their effect on the physicomechanical properties of Fe-Cr alloys and oxide dispersion strengthened (ODS) steel have been studied. It has been shown that the behavior of radiation defects in ODS steel and Fe-Cr alloys is qualitatively similar. Above 250 K, radiation-induced processes of the solid solution decomposition become conspicuous. These processes are much less pronounced in ODS steel because of specific features of its microstructure. Processes related to the overlapping of displacement cascades under neutron irradiation have been considered. It has been shown that, in this case, it is the increase in the size of vacancy clusters, rather than the growth of their concentration, that is prevailing. Possible mechanisms of the radiation hardening of the ODS steel and the Fe-13Cr alloy upon irradiation and subsequent annealing have been discussed.

  14. Low-temperature Raman spectroscopy of copper and silver nanoparticles ion-synthesized in a silica glass and subjected to laser annealing

    NASA Astrophysics Data System (ADS)

    Kurbatova, N. V.; Galyautdinov, M. F.; Shtyrkov, E. I.; Nuzhdin, V. I.; Stepanov, A. L.

    2010-06-01

    The modification of the shape of ion-synthesized silver and copper nanoparticles in a silica glass during laser annealing has been studied for the first time by Raman spectroscopy at a temperature of 77 K. The laser annealing has been carried out for a wavelength of 694 nm at the edge of the plasmon absorption spectrum of nanoparticles. A comparison of the experimental spectra and the calculated modes of in-phase bending vibrations of the “harmonica” type in nanostrings of the corresponding metals has demonstrated their good agreement. The effects observed have been discussed from the standpoint of the size quantization of vibrations in metal nanowires. This methodical approach has made it possible to estimate the sizes of the Ag and Cu nanoparticles under the assumption that they have an elongated form; in this case, their average lengths are equal to 2.5 and 1.4 nm, respectively.

  15. The Temperature Dependence of a Large Dynamic Range Photodetector Structure

    DTIC Science & Technology

    1991-12-01

    to achieve a logarithmic steady state response. This paper analyzes the temperature dependence of the circuit operation and presents experimental results demonstrating the capabilities and limitations of the model.

  16. Temperature- and magnetic field-dependence of exchange bias in SrCoO2.29 ceramics

    NASA Astrophysics Data System (ADS)

    Xie, L.; Huang, H. L.; Lu, Y. L.

    2017-01-01

    A cation's oxidation state in a transition metal oxide may significantly change its physical and chemical properties. In this work, magnetic properties of both cubic SrCoO2.29 and hexagonal SrCoO2.50 ceramics, annealed following a selected yet simple process, have been studied. The SrCoO2.50 ceramics annealed in air displays an unusual paramagnetic property, and the SrCoO2.29 quenched into water shows a short-range ferromagnetic coupling in the antiferromagnetic background. Exchange coupling at the ferromagnetic/antiferromagnetic interfaces brings out an obvious exchange bias effect in the SrCoO2.29 sample. Due to its complicated magnetic states, the exchange bias effect presents strong temperature and cooling field dependences.

  17. Temperature Dependence of Thermopower in Strongly Correlated Multiorbital Systems

    SciTech Connect

    Sekino, M; Okamoto, Satoshi; Koshibae, W; Mori, Michiyasu; Maekawa, Sadamichi

    2014-01-01

    Temperature dependence of thermopower in the multiorbital Hubbard model is studied by using the dynamical mean-field theory with the non-crossing approximation impurity solver. It is found that the Coulomb interaction, the Hund coupling, and the crystal filed splitting bring about nonmonotonic temperature dependence of the hermopower, including its sign reversal. The implication of our theoretical results to some materials is discussed.

  18. The temperature dependence of electrical excitability in fish hearts.

    PubMed

    Vornanen, Matti

    2016-07-01

    Environmental temperature has pervasive effects on the rate of life processes in ectothermic animals. Animal performance is affected by temperature, but there are finite thermal limits for vital body functions, including contraction of the heart. This Review discusses the electrical excitation that initiates and controls the rate and rhythm of fish cardiac contraction and is therefore a central factor in the temperature-dependent modulation of fish cardiac function. The control of cardiac electrical excitability should be sensitive enough to respond to temperature changes but simultaneously robust enough to protect against cardiac arrhythmia; therefore, the thermal resilience and plasticity of electrical excitation are physiological qualities that may affect the ability of fishes to adjust to climate change. Acute changes in temperature alter the frequency of the heartbeat and the duration of atrial and ventricular action potentials (APs). Prolonged exposure to new thermal conditions induces compensatory changes in ion channel expression and function, which usually partially alleviate the direct effects of temperature on cardiac APs and heart rate. The most heat-sensitive molecular components contributing to the electrical excitation of the fish heart seem to be Na(+) channels, which may set the upper thermal limit for the cardiac excitability by compromising the initiation of the cardiac AP at high temperatures. In cardiac and other excitable cells, the different temperature dependencies of the outward K(+) current and inward Na(+) current may compromise electrical excitability at temperature extremes, a hypothesis termed the temperature-dependent depression of electrical excitation.

  19. Temperature and size-dependent Hamaker constants for metal nanoparticles

    NASA Astrophysics Data System (ADS)

    Jiang, K.; Pinchuk, P.

    2016-08-01

    Theoretical values of the Hamaker constant have been calculated for metal nanoparticles using Lifshitz theory. The theory describes the Hamaker constant in terms of the permittivity of the interacting bodies. Metal nanoparticles exhibit an internal size effect that alters the dielectric permittivity of the particle when its size falls below the mean free path of the conducting electrons. This size dependence of the permittivity leads to size-dependence of the Hamaker constant for metal nanoparticles. Additionally, the electron damping and the plasma frequency used to model the permittivity of the particle exhibit temperature-dependence, which lead to temperature dependence of the Hamaker constant. In this work, both the size and temperature dependence for gold, silver, copper, and aluminum nanoparticles is demonstrated. The results of this study might be of interest for studying the colloidal stability of nanoparticles in solution.

  20. Temperature dependence of photovoltaic cells, modules, and systems

    SciTech Connect

    Emery, K.; Burdick, J.; Caiyem, Y.

    1996-05-01

    Photovoltaic (PV) cells and modules are often rated in terms of a set of standard reporting conditions defined by a temperature, spectral irradiance, and total irradiance. Because PV devices operates over a wide range of temperatures and irradiances, the temperature and irradiance related behavior must be known. This paper surveys the temperature dependence of crystalline and thin-film, state-of-the-art, research-size cells, modules, and systems measured by a variety of methods. The various error sources and measurement methods that contribute to cause differences in the temperature coefficient for a given cell or module measured with various methods are discussed.

  1. Temperature dependence of photovoltaic cells, modules, and systems

    SciTech Connect

    Emery, K.; Burdick, J.; Caiyem, Y.

    1996-09-01

    Photovoltaic (PV) cells and modules are often rated in terms of a set of standard reporting conditions defined by a temperature, spectral irradiance, and total irradiance. Because PV devices operate over a wide range of temperatures and irradiances, the temperature and irradiance related behavior must be known. This paper surveys the temperature dependence of crystalline and thin-film, state-of-the-art, research-size cells, modules, and systems measured by a variety of methods. The various error sources and measurement methods that contribute to cause differences in the temperature coefficient for a given cell or module measured with various methods are discussed.

  2. Temperature dependent droplet impact dynamics on flat and textured surfaces

    SciTech Connect

    Azar Alizadeh; Vaibhav Bahadur; Sheng Zhong; Wen Shang; Ri Li; James Ruud; Masako Yamada; Liehi Ge; Ali Dhinojwala; Manohar S Sohal

    2012-03-01

    Droplet impact dynamics determines the performance of surfaces used in many applications such as anti-icing, condensation, boiling and heat transfer. We study impact dynamics of water droplets on surfaces with chemistry/texture ranging from hydrophilic to superhydrophobic and across a temperature range spanning below freezing to near boiling conditions. Droplet retraction shows very strong temperature dependence especially for hydrophilic surfaces; it is seen that lower substrate temperatures lead to lesser retraction. Physics-based analyses show that the increased viscosity associated with lower temperatures can explain the decreased retraction. The present findings serve to guide further studies of dynamic fluid-structure interaction at various temperatures.

  3. Surface-morphology evolution during growth-interrupt in situ annealing on GaAs(110) epitaxial layers

    NASA Astrophysics Data System (ADS)

    Yoshita, Masahiro; Akiyama, Hidefumi; Pfeiffer, Loren N.; West, Ken W.

    2007-05-01

    Temperature and surface-coverage dependence of the evolution of surface morphology during growth-interrupt in situ annealing on GaAs epitaxial layers grown on the singular (110) cleaved edges by the cleaved-edge overgrowth method with molecular-beam epitaxy has been studied by means of atomic force microscopy. Annealing at substrate temperatures below 630 °C produced atomically flat surfaces with characteristic islands or pits, depending on the surface coverage. The atomic flatness of the surfaces is enhanced with increasing annealing temperature owing to the enhanced adatom migration. At a higher annealing temperature of about 650 °C, however, 2-monolayer-deep triangular pits with well-defined step edges due to Ga-atom desorption from the crystal appeared in the atomically flat surface. The growth-interrupt annealing temperature optimal for the formation of atomically flat GaAs(110) surfaces is therefore about 630 °C.

  4. A temperature dependent SPICE macro-model for power MOSFETs

    SciTech Connect

    Pierce, D.G.

    1991-01-01

    The power MOSFET SPICE Macro-Model has been developed suitable for use over the temperature range {minus}55 to 125 {degrees}C. The model is comprised of a single parameter set with temperature dependence accessed through the SPICE .TEMP card. SPICE parameter extraction techniques for the model and model predictive accuracy are discussed. 7 refs., 8 figs., 1 tab.

  5. Frequency and temperature dependence of dielectric properties of chicken meat

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Dielectric properties of chicken breast meat were measured with an open-ended coaxial-line probe between 200 MHz and 20 GHz at temperatures ranging from -20 degree C to +25 degree C. At a given temperature, the frequency dependence of the dielectric constant reveals two relaxations while those of th...

  6. Temperature-dependent egg development of Lygus hesperus (Hemiptera: Miridae)

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Lygus hesperus Knight (Hemiptera: Miridae) is a key agricultural pest in the western United States, but certain aspects of its temperature-dependent development are poorly defined. Accurate models describing the relationships between temperature and development of L. hesperus would facilitate the s...

  7. Annealing macromolecular crystals.

    PubMed

    Hanson, B Leif; Bunick, Gerard J

    2007-01-01

    The process of crystal annealing has been used to improve the quality of diffraction from crystals that would otherwise be discarded for displaying unsatisfactory diffraction after flash cooling. Although techniques and protocols vary, macromolecular crystals are annealed by warming the flash-cooled crystal, then flash cooling it again. To apply macromolecular crystal annealing, a flash-cooled crystal displaying unacceptably high mosaicity or diffraction from ice is removed from the goniometer and immediately placed in cryoprotectant buffer. The crystal is incubated in the buffer at either room temperature or the temperature at which the crystal was grown. After about 3 min, the crystal is remounted in the loop and flash cooled. In situ annealing techniques, where the cold stream is diverted and the crystal allowed to warm on the loop prior to flash cooling, are variations of annealing that appears to work best when large solvent channels are not present in the crystal lattice or the solvent content of the crystal is relatively low.

  8. Temperature Dependence of Viscosities of Common Carrier Gases

    ERIC Educational Resources Information Center

    Sommers, Trent S.; Nahir, Tal M.

    2005-01-01

    Theoretical and experimental evidence for the dependence of viscosities of the real gases on temperature is described, suggesting that this dependence is greater than that predicted by the kinetic theory of gases. The experimental results were obtained using common modern instrumentation and could be reproduced by students in analytical or…

  9. Temperature dependence of the diffusion coefficient of nanoparticles

    NASA Astrophysics Data System (ADS)

    Rudyak, V. Ya.; Dubtsov, S. N.; Baklanov, A. M.

    2008-06-01

    The temperature dependence of the diffusion coefficient of nanoparticles in gases has been experimentally studied. It is established that this dependence significantly differs from that predicted by various correlations, in particular, by the Cunningham-Millikan-Davies correlation that is used as an instrumental basis for virtually all methods of measurement of the diffusion coefficient in aerosols.

  10. On the temperature dependence of flammability limits of gases.

    PubMed

    Kondo, Shigeo; Takizawa, Kenji; Takahashi, Akifumi; Tokuhashi, Kazuaki

    2011-03-15

    Flammability limits of several combustible gases were measured at temperatures from 5 to 100 °C in a 12-l spherical flask basically following ASHRAE method. The measurements were done for methane, propane, isobutane, ethylene, propylene, dimethyl ether, methyl formate, 1,1-difluoroethane, ammonia, and carbon monoxide. As the temperature rises, the lower flammability limits are gradually shifted down and the upper limits are shifted up. Both the limits shift almost linearly to temperature within the range examined. The linear temperature dependence of the lower flammability limits is explained well using a limiting flame temperature concept at the lower concentration limit (LFL)--'White's rule'. The geometric mean of the flammability limits has been found to be relatively constant for many compounds over the temperature range studied (5-100 °C). Based on this fact, the temperature dependence of the upper flammability limit (UFL) can be predicted reasonably using the temperature coefficient calculated for the LFL. However, some compounds such as ethylene and dimethyl ether, in particular, have a more complex temperature dependence.

  11. Universal temperature dependence of the magnetization of gapped spin chains.

    PubMed

    Maeda, Yoshitaka; Hotta, Chisa; Oshikawa, Masaki

    2007-08-03

    A Haldane chain under applied field is analyzed numerically, and a clear minimum of magnetization is observed as a function of temperature. We elucidate its origin using the effective theory near the critical field and propose a simple method to estimate the gap from the magnetization at finite temperatures. We also demonstrate that there exists a relation between the temperature dependence of the magnetization and the field dependence of the spin-wave velocity. Our arguments are universal for general axially symmetric one-dimensional spin systems.

  12. The temperature dependent amide I band of crystalline acetanilide

    NASA Astrophysics Data System (ADS)

    Cruzeiro, Leonor; Freedman, Holly

    2013-10-01

    The temperature dependent anomalous peak in the amide I band of crystalline acetanilide is thought to be due to self-trapped states. On the contrary, according to the present model, the anomalous peak comes from the fraction of ACN molecules strongly hydrogen-bonded to a neighboring ACN molecule, and its intensity decreases because, on average, this fraction decreases as temperature increases. This model provides, for the first time, an integrated and theoretically consistent view of the temperature dependence of the full amide I band and a qualitative explanation of some of the features of nonlinear pump-probe experiments.

  13. A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

    NASA Astrophysics Data System (ADS)

    Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

    2017-04-01

    This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm‑3, and 3.95 cm2 V‑1 s‑1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current–voltage (I–V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

  14. TEMPERATURE DEPENDENCE OF THERMAL NEUTRONS FROM THE MOON

    SciTech Connect

    R.C. LITTLE; W. FELDMAN; ET AL

    2000-10-01

    Planetary thermal neutron fluxes provide a sensitive proxy for mafic and feldspathic terranes, and are also necessary for translating measured gamma-ray line strengths to elemental abundances. Both functions require a model for near surface temperatures and a knowledge of the dependence of thermal neutron flux on temperature. We have explored this dependence for a representative sample of lunar soil compositions and surface temperatures using MCNP{trademark}. For all soil samples, the neutron density is found to be independent of temperature, in accord with neutron moderation theory. The thermal neutron flux, however, does vary with temperature in a way that depends on {Delta}, the ratio of macroscopic absorption to energy-loss cross sections of soil compositions. The weakest dependence is for the largest {Delta} (which corresponds to the Apollo 17 high Ti basalt in our soil selection), and the largest dependence is for the lowest {Delta} (which corresponds to ferroan anorthosite, [FAN] in our selection). For the lunar model simulated, the depth at which the thermal neutron population is most sensitive to temperature is {approx}30 g/cm{sup 2}.

  15. Temperature-dependent bursting pattern analysis by modified Plant model

    PubMed Central

    2014-01-01

    Many electrophysiological properties of neuron including firing rates and rhythmical oscillation change in response to a temperature variation, but the mechanism underlying these correlations remains unverified. In this study, we analyzed various action potential (AP) parameters of bursting pacemaker neurons in the abdominal ganglion of Aplysia juliana to examine whether or not bursting patterns are altered in response to temperature change. Here we found that the inter-burst interval, burst duration, and number of spike during burst decreased as temperature increased. On the other hand, the numbers of bursts per minute and numbers of spikes per minute increased and then decreased, but interspike interval during burst firstly decreased and then increased. We also tested the reproducibility of temperature-dependent changes in bursting patterns and AP parameters. Finally we performed computational simulations of these phenomena by using a modified Plant model composed of equations with temperature-dependent scaling factors to mathematically clarify the temperature-dependent changes of bursting patterns in burst-firing neurons. Taken together, we found that the modified Plant model could trace the ionic mechanism underlying the temperature-dependent change in bursting pattern from experiments with bursting pacemaker neurons in the abdominal ganglia of Aplysia juliana. PMID:25051923

  16. Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing

    SciTech Connect

    Pavelescu, E.-M.; Wagner, J.; Komsa, H.-P.; Rantala, T.T.; Dumitrescu, M.; Pessa, M.

    2005-10-15

    We have studied the effects of growth temperature and subsequent thermal annealing on nitrogen incorporation into lattice-matched dilute Ga{sub 0.942}In{sub 0.058}NAs-on-GaAs epilayers, which were grown by the molecular-beam epitaxy method. The samples were studied experimentally by means of x-ray diffraction and Raman spectroscopy and theoretically by calculations within the density-functional theory. Over the entire range of growth temperatures applied (410-470 deg. C), nitrogen appeared to be mainly located on substitutional sites in 'short-range-order clusters' as N-Ga{sub 4} and, to a lesser extent, as N-Ga{sub 3}In. There were also indications of the presence of nitrogen dimers NN, as suggested by Raman spectroscopy, in qualitative agreement with the calculations. An increase in growth temperature reduced the amount of substitutional nitrogen and decreased the number of N-Ga{sub 4} clusters relative to N-Ga{sub 3}In. Postgrowth thermal annealing promoted the formation of In-N bonds and caused a blueshift in the optical band gap, which increased as the growth temperature was lowered.

  17. Temperature dependent Raman scattering in YCrO{sub 3}

    SciTech Connect

    Mall, A. K. Sharma, Y.; Mukherjee, S.; Garg, A.; Gupta, R.

    2014-04-24

    High quality polycrystalline YCrO{sub 3} samples were synthesized using solid-state-reaction method. The samples were subsequently characterized using X-ray diffraction and magnetometry. Further, temperature dependent Raman spectroscopy over a spectral range from 100 to 800 cm{sup −1} was used to examine the variation of phonons as a function of temperature from 90 to 300 K. In the low temperature ferroelectric phase of YCrO{sub 3}, the observed phonon spectra showed softening of some Raman modes below the magnetic ordering temperature (T{sub N} ∼ 142K), suggesting a coupling between the spin and phonon degrees of freedom.

  18. Effects of Intercritical Annealing Temperature on Mechanical Properties of Fe-7.9Mn-0.14Si-0.05Al-0.07C Steel

    DOE PAGES

    Zhao, Xianming; Shen, Yongfeng; Qiu, Lina; ...

    2014-12-09

    A medium Mn steel has been designed to achieve an excellent combination of strength and ductility based on the TRIP (Transformation Induced Plasticity) concept for automotive applications. Following six passes of hot rolling at 850 °C, the Fe-7.9Mn-0.14Si-0.05Al-0.07C (wt.%) steel was warm-rolled at 630 °C for seven passes and subsequently air cooled to room temperature. The sample was subsequently intercritically annealed at various temperatures for 30 min to promote the reverse transformation of martensite into austenite. The obtained results show that the highest volume fraction of austenite is 39% for the sample annealed at 600 °C. This specimen exhibits amore » yield stress of 910 MPa and a high ultimate tensile stress of 1600 MPa, with an elongation-to-failure of 0.29 at a strain rate of 1 × 10⁻³/s. The enhanced work-hardening ability of the investigated steel is closely related to martensitic transformation and the interaction of dislocations. Especially, the alternate arrangement of acicular ferrite (soft phase) and ultrafine austenite lamellae (50–200 nm, strong and ductile phase) is the key factor contributing to the excellent combination of strength and ductility. On the other hand, the as-warm-rolled sample also exhibits the excellent combination of strength and ductility, with elongation-to-failure much higher than those annealed at temperatures above 630 °C.« less

  19. Temperature dependence of piezoelectric properties for textured SBN ceramics.

    PubMed

    Kimura, Masahiko; Ogawa, Hirozumi; Kuroda, Daisuke; Sawada, Takuya; Higuchi, Yukio; Takagi, Hiroshi; Sakabe, Yukio

    2007-12-01

    Temperature dependences of piezoelectric properties were studied for h001i textured ceramics of bismuth layer-structured ferroelectrics, SrBi(2)Nb(2)O(9) (SBN). The textured ceramics with varied orientation degrees were fabricated by templated, grain-growth method, and the temperature dependences of resonance frequency were estimated. Excellent temperature stability of resonance frequency was obtained for the 76% textured ceramics. The resonance frequency of the 76% textured specimens varied almost linearly over a wide temperature range. Therefore, the variation was slight, even in a high temperature region above 150 degrees C. Temperature stability of a quartz crystal oscillator is generally higher than that of a ceramic resonator around room temperature. The variation of resonance frequency for the 76% textured SrBi(2)Nb(2)O(9) was larger than that of oscillation frequency for a typical quartz oscillator below 150 degrees C also in this study. However, the variation of the textured SrBi(2)Nb(2)O(9) was smaller than that of the quartz oscillator over a wide temperature range from -50 to 250 degrees C. Therefore, textured SrBi(2)Nb(2)O(9) ceramics is a major candidate material for the resonators used within a wide temperature range.

  20. Temperature dependence of the plastic scintillator detector for DAMPE

    NASA Astrophysics Data System (ADS)

    Wang, Zhao-Min; Yu, Yu-Hong; Sun, Zhi-Yu; Yue, Ke; Yan, Duo; Zhang, Yong-Jie; Zhou, Yong; Fang, Fang; Huang, Wen-Xue; Chen, Jun-Ling

    2017-01-01

    The Plastic Scintillator Detector (PSD) is one of the main sub-detectors in the DArk Matter Particle Explorer (DAMPE) project. It will be operated over a large temperature range from -10 to 30 °C, so the temperature effect of the whole detection system should be studied in detail. The temperature dependence of the PSD system is mainly contributed by the three parts: the plastic scintillator bar, the photomultiplier tube (PMT), and the Front End Electronics (FEE). These three parts have been studied in detail and the contribution of each part has been obtained and discussed. The temperature coefficient of the PMT is -0.320(±0.033)%/°C, and the coefficient of the plastic scintillator bar is -0.036(±0.038)%/°C. This result means that after subtracting the FEE pedestal, the variation of the signal amplitude of the PMT-scintillator system due to temperature mainly comes from the PMT, and the plastic scintillator bar is not sensitive to temperature over the operating range. Since the temperature effect cannot be ignored, the temperature dependence of the whole PSD has been also studied and a correction has been made to minimize this effect. The correction result shows that the effect of temperature on the signal amplitude of the PSD system can be suppressed. Supported by Strategic Priority Research Program on Space Science of the Chinese Academy of Sciences (XDA04040202-3) and Youth Innovation Promotion Association, CAS

  1. Arrhenius temperature dependence of in vitro tissue plasminogen activator thrombolysis

    NASA Astrophysics Data System (ADS)

    Shaw, George J.; Dhamija, Ashima; Bavani, Nazli; Wagner, Kenneth R.; Holland, Christy K.

    2007-06-01

    Stroke is a devastating disease and a leading cause of death and disability. Currently, the only FDA approved therapy for acute ischemic stroke is the intravenous administration of the thrombolytic medication, recombinant tissue plasminogen activator (tPA). However, this treatment has many contraindications and can have dangerous side effects such as intra-cerebral hemorrhage. These treatment limitations have led to much interest in potential adjunctive therapies, such as therapeutic hypothermia (T <= 35 °C) and ultrasound enhanced thrombolysis. Such interest may lead to combining these therapies with tPA to treat stroke, however little is known about the effects of temperature on the thrombolytic efficacy of tPA. In this work, we measure the temperature dependence of the fractional clot mass loss Δm(T) resulting from tPA exposure in an in vitro human clot model. We find that the temperature dependence is well described by an Arrhenius temperature dependence with an effective activation energy Eeff of 42.0 ± 0.9 kJ mole-1. Eeff approximates the activation energy of the plasminogen-to-plasmin reaction of 48.9 kJ mole-1. A model to explain this temperature dependence is proposed. These results will be useful in predicting the effects of temperature in future lytic therapies.

  2. Effect of annealing on the thermal properties of poly (lactic acid)/starch blends.

    PubMed

    Lv, Shanshan; Gu, Jiyou; Cao, Jun; Tan, Haiyan; Zhang, Yanhua

    2015-03-01

    A comparative study of the thermal behavior of PLA/starch blends annealed at different temperatures has been conducted. Annealing was found to be beneficial to weaken and even eliminate the enthalpy relaxation near Tg. The degree of crystallinity was evaluated by means of DSC, and the results showed that the crystallinity of the samples increased as the annealing temperatures were increased. It was observed that, during the annealing process, the disorder α (α') crystal modification tended to transform into the order α crystal modification. All of the PLA/starch blends showed a double melting behavior. With the increase of annealing temperatures, the lower Tm1 increased, while the Tm2 showed no evident change. The XRD patterns also showed that annealing was beneficial to the samples to form higher crystallinity. The TGA results indicated that the annealed samples did not show any higher thermal stability than the virgin samples. The activation energy calculated by the Flynn-Wall-Ozawa method at lower conversion degrees confirmed that the annealing slightly slowed the degradation. The activation energy did not show any dependence on the conversion degree, which indicated that there existed a complex degradation process of the PLA/starch blends. The average activation energy did not show obvious differences, indicating that the annealing treatment had little influence on the degradation activation energy.

  3. Temperature dependent ablation threshold in silicon using ultrashort laser pulses

    NASA Astrophysics Data System (ADS)

    Thorstensen, Jostein; Erik Foss, Sean

    2012-11-01

    We have experimentally investigated the ablation threshold in silicon as a function of temperature when applying ultrashort laser pulses at three wavelengths. By varying the temperature of a silicon substrate from room temperature to 320 °C, we observe that the ablation threshold for a 3 ps pulse using a wavelength of 1030 nm drops from 0.43 J/cm2 to 0.24 J/cm2, a reduction of 43%. For a wavelength of 515 nm, the ablation threshold drops from 0.22 J/cm2 to 0.15 J/cm2, a reduction of 35%. The observed ablation threshold for pulses at 343 nm remains constant with temperature, at 0.10 J/cm2. These results indicate that substrate heating is a useful technique for lowering the ablation threshold in industrial silicon processing using ultrashort laser pulses in the IR or visible wavelength range. In order to investigate and explain the observed trends, we apply the two-temperature model, a thermodynamic model for investigation of the interaction between silicon and ultrashort laser pulses. Applying the two-temperature model implies thermal equilibrium between optical and acoustic phonons. On the time scales encountered herein, this need not be the case. However, as discussed in the article, the two-temperature model provides valuable insight into the physical processes governing the interaction between the laser light and the silicon. The simulations indicate that ablation occurs when the number density of excited electrons reaches the critical electron density, while the lattice remains well below vaporization temperature. The simulated laser fluence required to reach critical electron density is also found to be temperature dependent. The dominant contributor to increased electron density is, in the majority of the investigated cases, the linear absorption coefficient. Two-photon absorption and impact ionization also generate carriers, but to a lesser extent. As the linear absorption coefficient is temperature dependent, we find that the simulated reduction in

  4. Enhancements of photoluminescence intensity in high-quality floating-zone Si by thermal annealing in vacuum

    NASA Astrophysics Data System (ADS)

    Kataoka, Keita; Hattori, Ken; Yamamoto, Aishi; Nakamoto Hattori, Azusa; Hatayama, Tomoaki; Kimoto, Yasuji; Endo, Katsuyoshi; Fuyuki, Takashi; Daimon, Hiroshi

    2016-11-01

    Inactivation of non-radiative defects by hydrogen and their thermal stabilities in a high-quality floating-zone Si wafer depending on annealing conditions have been studied using in-situ photoluminescence (PL) and thermal desorption under an ultra-high vacuum. The PL intensity increased to ∼400% of its initial value after annealing at 450 °C and decreased to ∼6% of its initial value after annealing at 600 °C due to inactivation and activation of non-radiative defects, respectively. Based on the annealing temperature- and duration-dependence of the PL intensity, we propose two types of hydrogenated defects with different thermal stabilities.

  5. Universal temperature-dependent normalized optoacoustic response of blood

    NASA Astrophysics Data System (ADS)

    Petrova, Elena V.; Liopo, Anton; Oraevsky, Alexander A.; Ermilov, Sergey A.

    2015-03-01

    We found and interpreted the universal temperature-dependent optoacoustic (photoacoustic) response (ThOR) in blood; the normalized ThOR is invariant with respect to hematocrit at the hemoglobin's isosbestic point. The unique compartmentalization of hemoglobin, the primary optical absorber at 805 nm, inside red blood cells (RBCs) explains the effect. We studied the temperature dependence of Gruneisen parameter in blood and aqueous solutions of hemoglobin and for the first time experimentally observed transition through the zero optoacoustic response at temperature T0, which was proved to be consistent for various blood samples. On the other hand, the hemoglobin solutions demonstrated linear concentration function of the temperature T0. When this function was extrapolated to the average hemoglobin concentration inside erythrocytes, the temperature T0 was found equivalent to that measured in whole and diluted blood. The obtained universal curve of blood ThOR was validated in both transparent and light scattering media. The discovered universal optoacoustic temperature dependent blood response provides foundation for future development of non-invasive in vivo temperature monitoring in vascularized tissues and blood vessels.

  6. Diversity of electronic transitions and photoluminescence properties of p-type cuprous oxide films: A temperature-dependent spectral transmittance study

    SciTech Connect

    Yu, W. L. E-mail: zghu@ee.ecnu.edu.cn; Lin, Y. Z.; Zhu, X. W.; Cai, S. S.; Chen, L. L.; Shao, H. H.; Hu, Z. G. E-mail: zghu@ee.ecnu.edu.cn; Han, M. J.

    2015-01-28

    Cuprous oxide films have been deposited on quartz substrates by a sol-gel method under various annealing temperatures. The X-ray diffraction analysis and Raman scattering show that all the films are of pure Cu{sub 2}O phase. From comparison of photoluminescence with 488 and 325 nm laser excitations, the electronic transition energies and intensities present the annealing-temperature dependent behavior. The electronic band structures of the Cu{sub 2}O film annealed at 800 °C, especially for the contribution of exciton series and high energy transitions, have been investigated by temperature dependent transmittance. The extracted refraction index and the high frequency dielectric constant both abruptly decrease until the temperature rises up to 100 K. Six transitions can be clearly identified and the red shift trend of E{sub o3}-E{sub o5} transition energies with increasing the temperature can be found. Moreover, the anomalous behavior takes place at about 200 K from the E{sub o6} transition. The singularities indicate that the change in the crystalline and electronic band structure occurs as the temperature near 100 K and 200 K for the film.

  7. Temperature-dependent transitions in isometric contractions of rat muscle.

    PubMed Central

    Ranatunga, K W; Wylie, S R

    1983-01-01

    The effect of temperature on tetanic tension development was examined in extensor digitorum longus (fast-twitch) and soleus (slow-twitch) muscles of the rat, in vitro and with direct stimulation. The temperature range was from 35 to 10 degrees C. 2. The maximum tetanic tension decreased slightly on cooling from 35 to 25 degrees C. Cooling below 20 degrees C resulted in a marked depression of tetanic tension. The results were similar in the two muscles. 3. Analysis (in the form of Arrhenius plots) of the rate of tetanic tension development and relaxation clearly showed the occurrence of two phases in their temperature dependence, due to an increased temperature sensitivity below about 25 degrees C. Arrhenius activation energy estimates for temperatures lower than 21 degrees C were around twice as high as those for temperatures higher than 24 degrees C in both muscles. PMID:6887040

  8. Temperature Dependent Constitutive Modeling for Magnesium Alloy Sheet

    SciTech Connect

    Lee, Jong K.; Lee, June K.; Kim, Hyung S.; Kim, Heon Y.

    2010-06-15

    Magnesium alloys have been increasingly used in automotive and electronic industries because of their excellent strength to weight ratio and EMI shielding properties. However, magnesium alloys have low formability at room temperature due to their unique mechanical behavior (twinning and untwining), prompting for forming at an elevated temperature. In this study, a temperature dependent constitutive model for magnesium alloy (AZ31B) sheet is developed. A hardening law based on non linear kinematic hardening model is used to consider Bauschinger effect properly. Material parameters are determined from a series of uni-axial cyclic experiments (T-C-T or C-T-C) with the temperature ranging 150-250 deg. C. The influence of temperature on the constitutive equation is introduced by the material parameters assumed to be functions of temperature. Fitting process of the assumed model to measured data is presented and the results are compared.

  9. Temperature dependence of damage coefficient in electron irradiated solar cells

    NASA Technical Reports Server (NTRS)

    Faith, T. J.

    1973-01-01

    Measurements of light-generated current vs cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10-ohm and 20-ohm cells. A relationship between minority-carrier diffusion length and light-generated current was derived by combining measurements of these two parameters: vs fluence at room temperature, and vs cell temperature in cells irradiated to a fluence of 1 x 10 to the 15th power e/sq cm. This relationship was used, together with the light-generated current data, to calculate the temperature dependence of the diffusion-length damage coefficient. The results show a strong decrease in the damage coefficient with increasing temperature in the range experienced by solar panels in synchronous earth orbit.

  10. Temperature-dependence on the structural, optical, and paramagnetic properties of ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Mhlongo, Gugu H.; Motaung, David E.; Nkosi, Steven S.; Swart, H. C.; Malgas, Gerald F.; Hillie, Kenneth T.; Mwakikunga, Bonex W.

    2014-02-01

    Violet-blue emitting ZnO nanostructures were synthesized by a microwave-assisted hydrothermal method followed by post-synthesis annealing at different temperatures. Scanning electron microscope analysis revealed a morphological transformation upon increasing annealing temperature from well-defined "flower-like" structure composed of ZnO multi-nanorods to randomly oriented worm-like ZnO nanostructures. Raman analysis showed that the E2 (high) mode became sharper and stronger while the intensity of the phonon peak at 580 cm-1 was gradually enhanced with the increase of annealing temperature. X-ray diffraction and X-ray photoelectron spectroscopy (XPS) measurements showed that all ZnO samples possess a typical wurtzite structure with high crystallinity and no other impurity phases were observed.

  11. On the detection of precipitation dependence on temperature

    NASA Astrophysics Data System (ADS)

    Zhou, Yu; Luo, Ming; Leung, Yee

    2016-05-01

    Employing their newly proposed interannual difference method (IADM), Liu et al. (2009) and Shiu et al. (2012) reported a shocking increase of around 100% K-1 in heavy precipitation with warming global temperature in 1979-2007. Such increase is alarming and prompts us to probe into the IADM. In this study, both analytical derivations and numerical analyses demonstrate that IADM provides no additional information to that of the conventional linear regression, and also, it may give a false indication of dependence. For clarity and simplicity, we therefore recommend linear regression analysis over the IADM for the detection of dependence. We also find that heavy precipitation decreased during the global warming hiatus, and the precipitation dependence on temperature drops by almost 50% when the study period is extended to 1979-2014 and it may keep dropping in the near future. The risk of having heavy precipitation under warming global temperature may have been overestimated.

  12. Temperature dependence of the Soret coefficient of ionic colloids

    NASA Astrophysics Data System (ADS)

    Sehnem, A. L.; Figueiredo Neto, A. M.; Aquino, R.; Campos, A. F. C.; Tourinho, F. A.; Depeyrot, J.

    2015-10-01

    The temperature dependence of the Soret coefficient ST(T ) in electrostatically charged magnetic colloids is investigated. Two different ferrofluids, with different particles' mean dimensions, are studied. In both cases we obtain a thermophilic behavior of the Soret effect. The temperature dependence of the Soret coefficient is described assuming that the nanoparticles migrate along the ionic thermoelectric field created by the thermal gradient. A model based on the contributions from the thermoelectrophoresis and variation of the double-layer energy, without fitting parameters, is used to describe the experimental results of the colloid with the bigger particles. To do so, independent measurements of the ζ potential, mass diffusion coefficient, and Seebeck coefficient are performed. The agreement of the theory and the experimental results is rather good. In the case of the ferrofluid with smaller particles, it is not possible to get experimentally reliable values of the ζ potential and the model described is used to evaluate this parameter and its temperature dependence.

  13. Temperature Dependence of Magnetic Excitations: Terahertz Magnons above the Curie Temperature

    NASA Astrophysics Data System (ADS)

    Qin, H. J.; Zakeri, Kh.; Ernst, A.; Kirschner, J.

    2017-03-01

    When an ordered spin system of a given dimensionality undergoes a second order phase transition, the dependence of the order parameter, i.e., magnetization on temperature, can be well described by thermal excitations of elementary collective spin excitations (magnons). However, the behavior of magnons themselves, as a function of temperature and across the transition temperature TC, is an unknown issue. Utilizing spin-polarized high resolution electron energy loss spectroscopy, we monitor the high-energy (terahertz) magnons, excited in an ultrathin ferromagnet, as a function of temperature. We show that the magnons' energy and lifetime decrease with temperature. The temperature-induced renormalization of the magnons' energy and lifetime depends on the wave vector. We provide quantitative results on the temperature-induced damping and discuss the possible mechanism, e.g., multimagnon scattering. A careful investigation of physical quantities determining the magnons' propagation indicates that terahertz magnons sustain their propagating character even at temperatures far above TC.

  14. Temperature-dependent morphology of chemical vapor grown molybdenum disulfide

    NASA Astrophysics Data System (ADS)

    Yang, Xiaoyin; Wang, Yantao; Zhou, Jiadong; Liu, Zheng

    2017-04-01

    Monolayered molybdenum disulfide (MoS2) is a 2D direct band gap semiconductor with promising potential applications. In this work, we observed the temperature dependency of the morphologies of MoS2 monolayers from chemical vapor deposition. At a low growing temperature below 850 °C, MoS2 flakes tend to be trianglular in shape. At 850–950 °C, hexagonal MoS2 flakes can be observed. While at a temperature over 950 °C, MoS2 flakes can form rectangular shapes. Complementary characterizations have been made to these samples. We also proposed a mechanism for such temperature-dependent shape evolution based on thermodynamic simulation.

  15. Temperature-dependent collective effects for silicene and germanene

    NASA Astrophysics Data System (ADS)

    Iurov, Andrii; Gumbs, Godfrey; Huang, Danhong

    2017-04-01

    We have numerically calculated electron exchange and correlation energies and dynamical polarization functions for recently discovered silicene, germanene and other buckled honeycomb lattices at various temperatures. We have compared the dependence of these energies on the chemical potential, field-induced gap and temperature and we have concluded that in many cases they behave qualitatively in a similar way, i.e. increasing with the doping, decreasing significantly at elevated temperatures, and displaying different dependences on the asymmetry gap at various temperatures. Furthermore, we have used the dynamical polarizability to study the ‘split’ plasmon branches in the buckled lattices and predicted a unique splitting, different from that in gapped graphene, for various energy gaps. Our results are crucial for stimulating electronic, transport and collective studies of silicene and germanene, as well as for enhancing silicene-based fabrication and technologies for photovoltaics and transistor devices.

  16. Origins of the temperature dependence of hammerhead ribozyme catalysis.

    PubMed Central

    Peracchi, A

    1999-01-01

    The difficulties in interpreting the temperature dependence of protein enzyme reactions are well recognized. Here, the hammerhead ribozyme cleavage was investigated under single-turnover conditions between 0 and 60 degrees C as a model for RNA-catalyzed reactions. Under the adopted conditions, the chemical step appears to be rate-limiting. However, the observed rate of cleavage is affected by pre-catalytic equilibria involving deprotonation of an essential group and binding of at least one low-affinity Mg2+ion. Thus, the apparent entropy and enthalpy of activation include contributions from the temperature dependence of these equilibria, precluding a simple physical interpretation of the observed activation parameters. Similar pre-catalytic equilibria likely contribute to the observed activation parameters for ribozyme reactions in general. The Arrhenius plot for the hammerhead reaction is substantially curved over the temperature range considered, which suggests the occurrence of a conformational change of the ribozyme ground state around physiological temperatures. PMID:10390528

  17. Temperature dependence of DNA translocations through solid-state nanopores.

    PubMed

    Verschueren, Daniel V; Jonsson, Magnus P; Dekker, Cees

    2015-06-12

    In order to gain a better physical understanding of DNA translocations through solid-state nanopores, we study the temperature dependence of λ-DNA translocations through 10 nm diameter silicon nitride nanopores, both experimentally and theoretically. The measured ionic conductance G, the DNA-induced ionic-conductance blockades [Formula: see text] and the event frequency Γ all increase with increasing temperature while the DNA translocation time τ decreases. G and [Formula: see text] are accurately described when bulk and surface conductances of the nanopore are considered and access resistance is incorporated appropriately. Viscous drag on the untranslocated part of the DNA coil is found to dominate the temperature dependence of the translocation times and the event rate is well described by a balance between diffusion and electrophoretic motion. The good fit between modeled and measured properties of DNA translocations through solid-state nanopores in this first comprehensive temperature study, suggest that our model captures the relevant physics of the process.

  18. Temperature dependence of protein hydration hydrodynamics by molecular dynamics simulations.

    SciTech Connect

    Lau, E Y; Krishnan, V V

    2007-07-18

    The dynamics of water molecules near the protein surface are different from those of bulk water and influence the structure and dynamics of the protein itself. To elucidate the temperature dependence hydration dynamics of water molecules, we present results from the molecular dynamic simulation of the water molecules surrounding two proteins (Carboxypeptidase inhibitor and Ovomucoid) at seven different temperatures (T=273 to 303 K, in increments of 5 K). Translational diffusion coefficients of the surface water and bulk water molecules were estimated from 2 ns molecular dynamics simulation trajectories. Temperature dependence of the estimated bulk water diffusion closely reflects the experimental values, while hydration water diffusion is retarded significantly due to the protein. Protein surface induced scaling of translational dynamics of the hydration waters is uniform over the temperature range studied, suggesting the importance protein-water interactions.

  19. Temperature and Depth Dependence of Order in Liquid Crystal Interfaces

    SciTech Connect

    Martinez-Miranda,L.; Hu, Y.

    2006-01-01

    We have studied the depth dependence and temperature behavior of the ordering of smectic-A films close to the smectic A-nematic transition, deposited on grated glass. X-ray grazing incidence geometry in reflection mode through the glass substrate was used to characterize the samples. Our results indicate the presence of a structure similar to the helical twist grain boundary phase. The structure has two maxima, one close to the glass-liquid crystal interface and another about 8 {mu}m above the surface. The structure at 8 {mu}m is the one that dominates at higher temperatures. In addition, we find that order is preserved to temperatures close to the nematic-isotropic transition temperature for the deeper gratings. We find also a dependence of the orientation of the structure with the depth of the grating and the elastic constant of the liquid crystal.

  20. Temperature-dependent absorption cross sections for hydrogen peroxide vapor

    NASA Technical Reports Server (NTRS)

    Nicovich, J. M.; Wine, P. H.

    1988-01-01

    Relative absorption cross sections for hydrogen peroxide vapor were measured over the temperature ranges 285-381 K for lambda = 230 nm-295 nm and 300-381 K for lambda = 193 nm-350 nm. The well established 298 K cross sections at 202.6 and 228.8 nm were used as an absolute calibration. A significant temperature dependence was observed at the important tropospheric photolysis wavelengths lambda over 300 nm. Measured cross sections were extrapolated to lower temperatures, using a simple model which attributes the observed temperature dependence to enhanced absorption by molecules possessing one quantum of O-O stretch vibrational excitation. Upper tropospheric photodissociation rates calculated using the extrapolated cross sections are about 25 percent lower than those calculated using currently recommended 298 K cross sections.

  1. Temperature dependence of the acoustoelectric current in graphene

    NASA Astrophysics Data System (ADS)

    Bandhu, L.; Nash, G. R.

    2014-12-01

    The acoustoelectric current in graphene has been investigated as a function of temperature, surface acoustic wave (SAW) intensity, and frequency. At high SAW frequencies, the measured acoustoelectric current decreases with decreasing temperature, but remains positive, which corresponds to the transport of holes, over the whole temperature range studied. The current also exhibits a linear dependence on the SAW intensity, consistent with the interaction between the carriers and SAWs being described by a relatively simple classical relaxation model. At low temperatures and SAW frequencies, the measured acoustoelectric current no longer exhibits a simple linear dependence on the SAW intensity, and the direction of the acoustoelectric current is also observed to reverse under certain experimental conditions.

  2. Temperature-dependent absorption cross sections for hydrogen peroxide vapor

    NASA Astrophysics Data System (ADS)

    Nicovich, J. M.; Wine, P. H.

    1988-03-01

    Relative absorption cross sections for hydrogen peroxide vapor were measured over the temperature ranges 285-381 K for lambda = 230 nm-295 nm and 300-381 K for lambda = 193 nm-350 nm. The well established 298 K cross sections at 202.6 and 228.8 nm were used as an absolute calibration. A significant temperature dependence was observed at the important tropospheric photolysis wavelengths lambda over 300 nm. Measured cross sections were extrapolated to lower temperatures, using a simple model which attributes the observed temperature dependence to enhanced absorption by molecules possessing one quantum of O-O stretch vibrational excitation. Upper tropospheric photodissociation rates calculated using the extrapolated cross sections are about 25 percent lower than those calculated using currently recommended 298 K cross sections.

  3. Temperature dependence of temporal resolution in an insect nervous system.

    PubMed

    Franz, A; Ronacher, B

    2002-05-01

    The vast majority of animals are poikilotherms, and thus face the problem that the temperature of their nervous systems rather smoothly follows the temperature changes imposed by their environment. Since basic properties of nerve cells, e.g., the time constants of ion channels, strongly depend on temperature, a temperature shift likely affects the processing of the temporal structure of sensory stimuli. This can be critical in acoustic communication systems in which time patterns of signals are decisive for recognition by the receiver. We investigated the temperature dependence of the responses of locust auditory receptors and interneurons by varying the temperature of the experimental animals during intracellular recordings. The resolution of fast amplitude modulations of acoustic signals was determined in a gap detection paradigm. In auditory receptors and local (second order) interneurons, temporal resolution was improved at higher temperatures. This gain could be attributed to a higher precision of spike timing. In a third-order neuron, a rise in temperature affected the interactions of inhibition and excitation in a complex manner, also resulting in a better resolution of gaps in the millisecond range.

  4. Temperature dependence of action potential parameters in Aplysia neurons.

    PubMed

    Hyun, Nam Gyu; Hyun, Kwang-Ho; Lee, Kyungmin; Kaang, Bong-Kiun

    2012-01-01

    Although the effects of temperature changes on the activity of neurons have been studied in Aplysia, the reproducibility of the temperature dependence of the action potential (AP) parameters has not been verified. To this end, we performed experiments using Aplysia neurons. Fourteen AP parameters were analyzed using the long-term data series recorded during the experiments. Our analysis showed that nine of the AP parameters decreased as the temperature increased: the AP amplitude (A(AP)), membrane potential at the positive peak (V(pp)), interspike interval, first half (Δt(r1)) and last half (Δt(r2)) of the temperature rising phase, first half (Δt(f1)) and last half (Δt(f2)) of the temperature falling phase, AP (Δt(AP, 1/2)), and differentiated signal (Δt(DS, 1/2)) half-width durations. Five of the AP parameters increased with temperature: the differentiated signal amplitude (A(DS)), absolute value of the membrane potential at negative peak (|V(np)|), absolute value of the maximum slope of the AP during the temperature rising (|-MSR|) and falling (|MSF|) phases, and spiking frequency (Frequency). This work could provide the basis for a better understanding of the elementary processes underlying the temperature-dependent neuronal activity in Aplysia.

  5. Temperature dependence of hydrophobic hydration dynamics: from retardation to acceleration.

    PubMed

    Duboué-Dijon, Elise; Fogarty, Aoife C; Laage, Damien

    2014-02-13

    The perturbation induced by a hydrophobic solute on water dynamics is essential in many biochemical processes, but its mechanism and magnitude are still debated. A stringent test of the different proposed pictures is provided by recent NMR measurements by Qvist and Halle (J. Am. Chem. Soc. 2008, 130, 10345-10353) which showed that, unexpectedly, the perturbation changes in a non-monotonic fashion when the solution is cooled below room temperature. Here we perform and analyze molecular dynamics simulations of a small paradigm amphiphilic solute, trimethylamine N-oxide (TMAO), in dilute aqueous solutions over the 218-350 K temperature range. We first show that our simulations properly reproduce the non-monotonic temperature dependence. We then develop a model which combines our previously suggested entropic excluded-volume effect with a perturbation factor arising from the difference between local structural fluctuations in the shell and the bulk. Our model provides a detailed molecular understanding of the hydrophobic perturbation over the full temperature range investigated. It shows that the excluded-volume factor brings a dominant temperature-independent contribution to the perturbation at all temperatures, and provides a very good approximation at room temperature. The non-monotonic temperature dependence of the perturbation is shown to arise from the structural factor and mostly from relative shifts between the shell and bulk distributions of local structures, whose amplitude remains very small compared to the widths of those distributions.

  6. Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

    SciTech Connect

    Sadoh, Taizoh Chikita, Hironori; Miyao, Masanobu; Matsumura, Ryo

    2015-09-07

    Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe on Si substrates is strongly desired to realize advanced electronic and optical devices, which can be merged onto Si large-scale integrated circuits (LSI). To achieve this, annealing characteristics of a-GeSn/c-Si structures are investigated under wide ranges of the initial Sn concentrations (0%–26%) and annealing conditions (300–1000 °C, 1 s–48 h). Epitaxial growth triggered by SiGe mixing is observed after annealing, where the annealing temperatures necessary for epitaxial growth significantly decrease with increasing initial Sn concentration and/or annealing time. As a result, Ge-rich (∼80%) SiGe layers with Sn concentrations of ∼2% are realized by ultra-low temperature annealing (300 °C, 48 h) for a sample with the initial Sn concentration of 26%. The annealing temperature (300 °C) is in the solid-liquid coexisting temperature region of the phase diagram for Ge-Sn system. From detailed analysis of crystallization characteristics and composition profiles in grown layers, it is suggested that SiGe mixing is generated by a liquid-phase reaction even at ultra-low temperatures far below the melting temperature of a-GeSn. This ultra-low-temperature growth technique of Ge-rich SiGe on Si substrates is expected to be useful to realize next-generation LSI, where various multi-functional devices are integrated on Si substrates.

  7. Anomalous temperature dependence of the IR spectrum of polyalanine

    NASA Astrophysics Data System (ADS)

    Helenius, V.; Korppi-Tommola, J.; Kotila, S.; Nieminen, J.; Lohikoski, R.; Timonen, J.

    1997-12-01

    We have studied the temperature dependence of the infrared spectra of acetanilide (ACN), tryptophan-(alanine) 15, and tyrosine-(alanine) 15. No sidebands of the amide-I vibration were observed in the polypeptides, but two anomalous sidebands of the NH stretch with a similar temperature dependence as that of the anomalous amide-I vibrational mode at 1650 cm -1 of crystalline ACN were detected. Fermi resonance combined with the appearance of a red-shifted sideband of NH stretch through coupling to lattice modes seems to explain this band structure. Observations are indicative of excitons that may occur in polypeptides as well as in single crystals of ACN.

  8. Honeybee flight metabolic rate: does it depend upon air temperature?

    PubMed

    Woods, William A; Heinrich, Bernd; Stevenson, Robert D

    2005-03-01

    Differing conclusions have been reached as to how or whether varying heat production has a thermoregulatory function in flying honeybees Apis mellifera. We investigated the effects of air temperature on flight metabolic rate, water loss, wingbeat frequency, body segment temperatures and behavior of honeybees flying in transparent containment outdoors. For periods of voluntary, uninterrupted, self-sustaining flight, metabolic rate was independent of air temperature between 19 and 37 degrees C. Thorax temperatures (T(th)) were very stable, with a slope of thorax temperature on air temperature of 0.18. Evaporative heat loss increased from 51 mW g(-1) at 25 degrees C to 158 mW g(-1) at 37 degrees C and appeared to account for head and abdomen temperature excess falling sharply over the same air temperature range. As air temperature increased from 19 to 37 degrees C, wingbeat frequency showed a slight but significant increase, and metabolic expenditure per wingbeat showed a corresponding slight but significant decrease. Bees spent an average of 52% of the measurement period in flight, with 19 of 78 bees sustaining uninterrupted voluntary flight for periods of >1 min. The fraction of time spent flying declined as air temperature increased. As the fraction of time spent flying decreased, the slope of metabolic rate on air temperature became more steeply negative, and was significant for bees flying less than 80% of the time. In a separate experiment, there was a significant inverse relationship of metabolic rate and air temperature for bees requiring frequent or constant agitation to remain airborne, but no dependence for bees that flew with little or no agitation; bees were less likely to require agitation during outdoor than indoor measurements. A recent hypothesis explaining differences between studies in the slope of flight metabolic rate on air temperature in terms of differences in metabolic capacity and thorax temperature is supported for honeybees in voluntary

  9. Temperature dependence of the colloidal agglomeration inhibition: computer simulation study.

    PubMed

    Barcenas, Mariana; Douda, Janna; Duda, Yurko

    2007-09-21

    There exist experimental evidences that the structure and extension of colloidal aggregates in suspensions change dramatically with temperature. This results in an associated change in the suspension rheology. Experimental studies of the inhibitor applications to control the particle clustering have revealed some unexpected tendencies. Namely, the heating of colloidal suspensions has provoked either extension or reduction of the colloidal aggregates. To elucidate the origin of this behavior, we investigate the influence of temperature on the stabilizing effect of the inhibitor, applying an associative two-component fluid model. Our results of the canonical Monte Carlo simulations indicate that the anomalous effect of the temperature may not be necessarily explained by the temperature dependent changes in the inhibitor tail conformation, as has been suggested recently by Won et al. [Langmuir 21, 924 (2005)]. We show that the competition between colloid-colloid and colloid-inhibitor associations, which, in turn, depends on the temperature and the relative concentrations, may be one of the main reasons for the unexpected temperature dependence of inhibitor efficacy.

  10. Co{sub 2}FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    SciTech Connect

    Belmeguenai, M. Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P.; Gabor, M. S. Petrisor, T.; Tiusan, C.

    2014-01-28

    10 nm and 50 nm Co{sub 2}FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T{sub a}), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T{sub a}, while the uniaxial anisotropy field is nearly unaffected by T{sub a} within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T{sub a}. Finally, the FMR linewidth decreases when increasing T{sub a}, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10{sup −3} and 1.3×10{sup −3} for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

  11. The temperature dependence of ponded infiltration under isothermal conditions

    USGS Publications Warehouse

    Constantz, J.; Murphy, F.

    1991-01-01

    A simple temperature-sensitive modification to the Green and Ampt infiltration equation is described; this assumes that the temperature dependence of the hydraulic conductivity is reciprocally equal to the temperature dependence of the viscosity of liquid water, and that both the transmission zone saturation and the wetting front matric potential gradient are independent of temperature. This modified Green and Ampt equation is compared with ponded, isothermal infiltration experiments run on repacked columns of Olympic Sand and Aiken Loam at 5, 25, and 60??C. Experimental results showed increases in infiltration rates of at least 300% between 5 and 60??C for both soil materials, with subsequent increases in cumulative infiltration of even greater magnitudes for the loam. There is good agreement between measured and predicted initial infiltration rates at 25??C for both soil materials, yet at 60??C, the predicted results overestimate initial infiltration rates for the sand and underestimate initial rates for the loam. Measurements of the wetting depth vs. cumulative infiltration indicate that the transmission zone saturation increased with increasing temperature for both soil materials. In spite of this increased saturation with temperature, the final infiltration rates at both 25 and 60??C were predicted accurately using the modified Green and Ampt equation. This suggests that increased saturation occurred primarily in dead-end pore spaces, so that transmission zone hydraulic conductivities were unaffected by these temperature-induced changes in saturation. In conclusion, except for initial infiltration rates at 60??C, the measured influence of temperature on infiltration rates was fully accounted for by the temperature dependence of the viscosity of liquid water. ?? 1991.

  12. High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs

    NASA Astrophysics Data System (ADS)

    Shimizu, Jun’ichi; Ohashi, Takumi; Matsuura, Kentaro; Muneta, Iriya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi

    2017-04-01

    We investigate the low-temperature formation of MoS2 films by radio frequency (RF) sputtering. This work is focused on reducing the number of sulfur defects and the improving electrical characteristics of sputtered MoS2 films by low-temperature annealing in various atmospheres. 10 nm MoS2 films were synthesized by the RF sputtering at 300 °C and followed by annealing in nitrogen or forming gas (FG: 3% hydrogen in N2) at 200–400 °C. As a result, the compensation for sulfur defects in FG anneal process using residual sulfur gave better results that in N2 annealing. Eventually, a high Hall-effect mobility of 36 cm2 V‑1 s‑1 and a low carrier density of 1014 cm‑3 were achieved.

  13. Temperature dependent energy levels of methylammonium lead iodide perovskite

    SciTech Connect

    Foley, Benjamin J.; Marlowe, Daniel L.; Choi, Joshua J. E-mail: mgupta@virginia.edu; Sun, Keye; Gupta, Mool C. E-mail: mgupta@virginia.edu; Saidi, Wissam A.; Scudiero, Louis E-mail: mgupta@virginia.edu

    2015-06-15

    Temperature dependent energy levels of methylammonium lead iodide are investigated using a combination of ultraviolet photoemission spectroscopy and optical spectroscopy. Our results show that the valence band maximum and conduction band minimum shift down in energy by 110 meV and 77 meV as temperature increases from 28 °C to 85 °C. Density functional theory calculations using slab structures show that the decreased orbital splitting due to thermal expansion is a major contribution to the experimentally observed shift in energy levels. Our results have implications for solar cell performance under operating conditions with continued sunlight exposure and increased temperature.

  14. Temperature dependence of nucleation rate in a binary solid solution

    NASA Astrophysics Data System (ADS)

    Wang, H. Y.; Philippe, T.; Duguay, S.; Blavette, D.

    2012-12-01

    The influence of regression (partial dissolution) effects on the temperature dependence of nucleation rate in a binary solid solution has been studied theoretically. The results of the analysis are compared with the predictions of the simplest Volmer-Weber theory. Regression effects are shown to have a strong influence on the shape of the curve of nucleation rate versus temperature. The temperature TM at which the maximum rate of nucleation occurs is found to be lowered, particularly for low interfacial energy (coherent precipitation) and high-mobility species (e.g. interstitial atoms).

  15. Temperature dependent droplet impact dynamics on flat and textured surfaces

    NASA Astrophysics Data System (ADS)

    Alizadeh, Azar; Bahadur, Vaibhav; Zhong, Sheng; Shang, Wen; Li, Ri; Ruud, James; Yamada, Masako; Ge, Liehui; Dhinojwala, Ali; Sohal, Manohar

    2012-03-01

    Droplet impact dynamics determines the performance of surfaces used in many applications such as anti-icing, condensation, boiling, and heat transfer. We study impact dynamics of water droplets on surfaces with chemistry/texture ranging from hydrophilic to superhydrophobic and across a temperature range spanning below freezing to near boiling conditions. Droplet retraction shows very strong temperature dependence especially on hydrophilic surfaces; it is seen that lower substrate temperatures lead to lesser retraction. Physics-based analyses show that the increased viscosity associated with lower temperatures combined with an increased work of adhesion can explain the decreased retraction. The present findings serve as a starting point to guide further studies of dynamic fluid-surface interaction at various temperatures.

  16. Compensation of Verdet Constant Temperature Dependence by Crystal Core Temperature Measurement

    PubMed Central

    Petricevic, Slobodan J.; Mihailovic, Pedja M.

    2016-01-01

    Compensation of the temperature dependence of the Verdet constant in a polarimetric extrinsic Faraday sensor is of major importance for applying the magneto-optical effect to AC current measurements and magnetic field sensing. This paper presents a method for compensating the temperature effect on the Faraday rotation in a Bi12GeO20 crystal by sensing its optical activity effect on the polarization of a light beam. The method measures the temperature of the same volume of crystal that effects the beam polarization in a magnetic field or current sensing process. This eliminates the effect of temperature difference found in other indirect temperature compensation methods, thus allowing more accurate temperature compensation for the temperature dependence of the Verdet constant. The method does not require additional changes to an existing Δ/Σ configuration and is thus applicable for improving the performance of existing sensing devices. PMID:27706043

  17. High temperature dependence of thermal transport in graphene foam

    NASA Astrophysics Data System (ADS)

    Li, Man; Sun, Yi; Xiao, Huying; Hu, Xuejiao; Yue, Yanan

    2015-03-01

    In contrast to the decreased thermal property of carbon materials with temperature according to the Umklapp phonon scattering theory, highly porous free-standing graphene foam (GF) exhibits an abnormal characteristic that its thermal property increases with temperature above room temperature. In this work, the temperature dependence of thermal properties of free-standing GF is investigated by using the transient electro-thermal technique. Significant increase for thermal conductivity and thermal diffusivity from ˜0.3 to 1.5 W m-1 K-1 and ˜4 × 10-5 to ˜2 × 10-4 m2 s-1 respectively is observed with temperature from 310 K to 440 K for three GF samples. The quantitative analysis based on a physical model for porous media of Schuetz confirms that the thermal conductance across graphene contacts rather than the heat conductance inside graphene dominates thermal transport of our GFs. The thermal expansion effect at an elevated temperature makes the highly porous structure much tighter is responsible for the reduction in thermal contact resistance. Besides, the radiation heat exchange inside the pores of GFs improves the thermal transport at high temperatures. Since free-standing GF has great potential for being used as supercapacitor and battery electrode where the working temperature is always above room temperature, this finding is beneficial for thermal design of GF-based energy applications.

  18. An experimental and computational study of size-dependent contact-angle of dewetted metal nanodroplets below its melting temperature

    NASA Astrophysics Data System (ADS)

    Azeredo, Bruno P.; Yeratapally, Saikumar R.; Kacher, Josh; Ferreira, Placid M.; Sangid, Michael D.

    2016-11-01

    Decorating 1D nanostructures (e.g., wires and tubes) with metal nanoparticles serves as a hierarchical approach to integrate the functionalities of metal oxides, semiconductors, and metals. This paper examines a simple and low-temperature approach to self-assembling gold nanoparticles (Au-np)—a common catalytic material—onto silicon nanowires (SiNWs). A conformal ultra-thin film (i.e., <15 nm thick) is deposited onto SiNWs and thermally dewetted, forming nanoparticles in the 6-70 nm range. Two parameters of its morphology are dependent upon dewetting conditions: particle size and particle contact angle. Using transmission electron microscopy imaging, it is found that annealing temperature profile has a strong effect on the particle size. Additionally, the contact angle is found to be dependent on particle size and temperature even below the eutectic temperature of the Au-Si alloy. Molecular dynamics simulations were performed to investigate potential explanations for such experimental observation. In this temperature regime, the simulations reveal the formation of an amorphous phase at the interface between the catalyst and SiNW that is sensitive to temperature. This amorphous layer increases the adhesion energy at the interface and explains the contact angle dependence on temperature.

  19. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

    PubMed Central

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-01-01

    In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V−1 s−1; Ion/Ioff ratio ≈ 108; reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances. PMID:27198067

  20. Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing

    NASA Astrophysics Data System (ADS)

    Murakoshi, Atsushi; Iwase, Masao; Niiyama, Hiromi; Koike, Mitsuo; Suguro, Kyoichi

    2013-07-01

    A contact resistivity of 6.9×10-9 Ω.cm2 has been obtained in an AlSi (1 wt %)-Cu (0.5 wt %) alloy/silicon system by using heavy-dose ion implantations of germanium and boron combined with low-temperature annealing. The analysis of the combined state showed that B12 cluster was incorporated and the supersaturation activation layer was formed into the region where germanium separated. Separated germanium is expected to have high interface state density. It is considered that this interface state density also has a Fermi level, and in order to reduce the difference from the Fermi level of the substrate, the charge moves to interface state density from the substrate. As a result, it is not based on a metallic material but a work function becomes small because pinning by which a Fermi level is fixed to interface state density occurs owing to the substrate/metal interface. It is considered to be attributable to the existence of a Ge-rich layer formed by low-temperature annealing, and a supersaturation activation layer that lowers contact resistance was formed.

  1. 2H-CuScO2 Prepared by Low-Temperature Hydrothermal Methods and Post-Annealing Effects on Optical and Photoelectrochemical Properties.

    PubMed

    Draskovic, Thomas I; Yu, Mingzhe; Wu, Yiying

    2015-06-01

    The delafossite structured CuScO2 is a p-type, wide band gap oxide that has been shown to support significant oxygen intercalation, leading to darkened color and increased conductivity. Control of this oxidation proves difficult by the conventional high-temperature solid-state syntheses. In addition, a pure hexagonal (2H) or rhombohedral (3R) polytype of CuScO2 requires careful control of synthetic parameters or intentional doping. Lower-temperature hydrothermal syntheses have thus far led to only a mixed 2H/3R product. Herein, control of hydrothermal conditions with the consideration of copper and scandium hydrolysis led to the synthesis of light beige, hierarchically structured particles of 2H-CuScO2. Absorption of the particles in the visible range was found to increase upon annealing of the sample in air, most likely due to the Cu(II) formation from oxygen interstitials. X-ray photoelectron spectroscopy confirmed purely Cu(I) in the as-synthesized 2H-CuScO2 and increased Cu(II) amounts upon annealing. Oxidation of the samples also led to shifts of the Fermi level toward the valence band as observed by increases in the measured flat band potentials versus normal hydrogen electrode, confirming increased hole carrier densities.

  2. Effect of TiO2 Particles on Micro-Hardness Corrosion, Wear and Friction of Ni-P-TiO2 Composite Coatings at Different Annealing Temperatures

    NASA Astrophysics Data System (ADS)

    Gadhari, Prasanna; Sahoo, Prasanta

    2016-09-01

    The present study investigates the effect of titania particles on the micro-hardness, wear resistance, corrosion resistance and friction of electroless Ni-P-TiO2 composite coatings deposited on mild steel substrates at different annealing temperatures. The experimental results confirmed that the amount of TiO2 particles incorporated in the coatings increases with increase in the concentration of particles in the electroless bath. In presence of TiO2 particles, hardness, wear resistance and corrosion resistance of the coating improve significantly. At higher annealing temperature, wear resistance increases due to formation of hard Ni3P phase and incorporation of titania particles in the coated layer. Charge transfer resistance and corrosion current density of the coatings reduce with an increase in TiO2 particles, whereas corrosion potential increases. Microstructure changes and composition of the composite coating due to heat treatment are studied with the help of scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDXA) and X-ray diffraction (XRD) analysis.

  3. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

    NASA Astrophysics Data System (ADS)

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-05-01

    In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V‑1 s‑1 Ion/Ioff ratio ≈ 108 reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances.

  4. Investigation of temperature dependence of development and aging

    NASA Technical Reports Server (NTRS)

    Sacher, G. A.

    1969-01-01

    Temperature dependence of maturation and metabolic rates in insects, and the failure of vital processes during development were investigated. The paper presented advances the general hypothesis that aging in biological systems is a consequence of the production of entropy concomitant with metabolic activity.

  5. Temperature dependence of bag pressure from quasiparticle model

    NASA Astrophysics Data System (ADS)

    Prasad, N.; Singh, C. P.

    2001-03-01

    A quasiparticle model with effective thermal gluon and quark masses is used to derive a temperature /T- and baryon chemical potential /μ-dependent bag constant /B(μ,T). Consequences of such a bag constant are obtained on the equation of state (EOS) for a deconfined quark-gluon plasma (QGP).

  6. Time- and temperature-dependent failures of a bonded joint

    SciTech Connect

    Sihn, Sangwook; Miyano, Yasushi; Tsai, S.W.

    1997-07-01

    Time and temperature dependent properties of a tubular lap bonded joint are reported. The joint bonds a cast iron rod and a composite pipe together with an epoxy type of an adhesive material containing chopped glass fiber. A new fabrication method is proposed.

  7. Temperature dependent phonon shifts in few-layer black phosphorus.

    PubMed

    Late, Dattatray J

    2015-03-18

    Atomically thin two-dimensional (2D) sheets of black phosphorus have attracted much attention due to their potential for future nanoelectronic and photonics device applications. Present investigations deal with the temperature dependent phonon shifts in a few-layer black phosphorus nanosheet sample prepared using micromechanical exfoliation on a 300 nm SiO2/Si substrate. The temperature dependent Raman spectroscopy experiments were carried out on a few-layer black phosphorus sample, which depicts softening of Ag(1), B2g, and Ag(2) modes as temperature increases from 77 to 673 K. The calculated temperature coefficients for Ag(1), B2g, and Ag(2) modes of the few-layer black phosphorus nanosheet sample were observed to be -0.01, -0.013, and -0.014 cm(-1) K(-1), respectively. The temperature dependent softening modes of black phosphorus results were explained on the basis of a double resonance process which is more active in an atomically thin sample. This process can also be fundamentally pertinent in other promising and emerging 2D ultrathin layer and heterostructured materials.

  8. Study of the PTW microLion chamber temperature dependence

    NASA Astrophysics Data System (ADS)

    Gómez, F.; González-Castaño, D.; Díaz-Botana, P.; Pardo-Montero, J.

    2014-06-01

    The use of liquid ionization chambers in radiotherapy has grown during the past few years. While for air ionization chambers the kTP correction for air mass density due to pressure and temperature variations is well known, less work has been done on the case of liquid ionization chambers, where there is still the need to take into account the influence of temperature in the free ion yield. We have measured the PTW microLion isooctane-filled ionization chamber temperature dependence in a ˜ ±10 °C interval around the standard 20 °C room temperature for three operation voltages, including the manufacturer recommended voltage, and two beam qualities, 60Co and 50 kV x-rays. Within the measured temperature range, the microLion signal exhibits a positive linear dependence, which is around 0.24% K-1 at 800 V with 60Co irradiation. This effect is of the same order of magnitude as the T dependence found in air ionization chambers, but its nature is completely different and its sign opposite to that of an air chamber. Onsager theory has been used to model the results and is consistent with this linear behaviour. However, some inconsistencies in the modelling of the 50 kV x-ray results have been found that are attributed to the failure of Onsager's isolated pair assumption for such radiation quality.

  9. Temperature dependence of anuran distortion product otoacoustic emissions.

    PubMed

    Meenderink, Sebastiaan W F; van Dijk, Pim

    2006-09-01

    To study the possible involvement of energy-dependent mechanisms in the transduction of sound within the anuran ear, distortion product otoacoustic emissions (DPOAEs) were recorded in the northern leopard frog over a range of body temperatures. The effect of body temperature depended on the stimulus levels used and on the hearing organ under investigation. Low-level DPOAEs from the amphibian papilla (AP) were reversibly depressed for decreased body temperatures. Apparently, DPOAE generation in the AP depends on metabolic rate, indicating the involvement of active processes in the transduction of sound. In contrast, in the other hearing organ, the basilar papilla (BP), the effects of body temperature on DPOAEs were less pronounced, irrespective of the stimulus levels used. Apparently, metabolic rate is less influencing DPOAE generation. We interpret these results as evidence that no amplifier is involved in sound transduction in the BP. The passive functioning of the anuran BP would place this hearing organ in a unique position within tetrapod hearing, but may actually be beneficial to ectothermic species because it will provide the animal with a consistent spectral window, regardless of ambient or body temperature.

  10. Decomposition is always temperature dependent, except when its not

    NASA Astrophysics Data System (ADS)

    Davidson, E. A.

    2011-12-01

    Understanding of the temperature dependence of decomposition of soil organic matter has been complicated by the two following facts: (1) all enzymatic activity, including biologically mediated breakdown of organic matter in soils, is temperature dependent; and (2) much of the organic matter in soils is effectively isolated from enzymatic activity, either in space or time, through a wide variety of environmental constraints, including physical and chemical protection, spatial heterogeneity, lack of oxygen, or sub-zero temperatures. Because of the second fact, the first has been questioned in papers that report lack of observed temperature sensitivity of decomposition of soil organic matter. In my 2006 review paper with Ivan Janssens, we attempted to clarify these facts and their interactions and why temperature dependence is sometimes observed and sometimes not. However, it appears that our discussion of how Arrhenius kinetics affects enzymatic activity has become the paper's main recognized legacy, and it has been cited in support of the "carbon-quality-temperature" hypothesis. Here I will update and clarify aspects of that review as follows: (1) a Dual Arrhenius Michaelis-Menten (DAMM) model that merges these kinetic models with substrate diffusion processes can parsimoniously and mechanistically explain fast responses of carbon metabolism in soils as temperature and water content vary over time scales of minutes to months; and (2) variations in activation energies of enzymatic reactions have little or no effect on C metabolism when substrate is not available to enzymes, and this second point applies to both short and long-term turnover of soil organic matter. Because of this latter point, mean residence times and decomposition constants often do not correlate well with the chemical structure ("carbon quality") of soil organic matter, as is predicted by Arrhenius kinetics alone. While it is true that biological decomposition reactions, when they occur, are always

  11. Stress versus temperature dependence of activation energies for creep

    NASA Technical Reports Server (NTRS)

    Freed, A. D.; Raj, S. V.; Walker, K. P.

    1992-01-01

    The activation energy for creep at low stresses and elevated temperatures is associated with lattice diffusion, where the rate controlling mechanism for deformation is dislocation climb. At higher stresses and intermediate temperatures, the rate controlling mechanism changes from dislocation climb to obstacle-controlled dislocation glide. Along with this change in deformation mechanism occurs a change in the activation energy. When the rate controlling mechanism for deformation is obstacle-controlled dislocation glide, it is shown that a temperature-dependent Gibbs free energy does better than a stress-dependent Gibbs free energy in correlating steady-state creep data for both copper and LiF-22mol percent CaF2 hypereutectic salt.

  12. Stress versus temperature dependent activation energies in creep

    NASA Technical Reports Server (NTRS)

    Freed, A. D.; Raj, S. V.; Walker, K. P.

    1990-01-01

    The activation energy for creep at low stresses and elevated temperatures is lattice diffusion, where the rate controlling mechanism for deformation is dislocation climb. At higher stresses and intermediate temperatures, the rate controlling mechanism changes from that of dislocation climb to one of obstacle-controlled dislocation glide. Along with this change, there occurs a change in the activation energy. It is shown that a temperature-dependent Gibbs free energy does a good job of correlating steady-state creep data, while a stress-dependent Gibbs free energy does a less desirable job of correlating the same data. Applications are made to copper and a LiF-22 mol. percent CaF2 hypereutectic salt.

  13. Temperature dependence of penetration depth in thin film niobium

    NASA Technical Reports Server (NTRS)

    More, N.; Muhlfelder, B.; Lockhart, J.

    1989-01-01

    A novel technique is presented which should allow precise determination of the temperature dependence of the inductance, and hence of the penetration depth, of superconducting niobium thin-film structures. Four niobium thin-film stripline inductors are arranged in a bridge configuration, and inductance differences are measured using a potentiometric technique with a SQUID (superconducting quantum interference device) as the null detector. Numerical simulations of the stripline inductances are presented which allow the performance of the measurement technique to be evaluated. The prediction of the two-fluid model for the penetration-depth temperature dependence is given for reduced temperatures of 0.3 to 0.9. The experimental apparatus and its resolution and accuracy are discussed.

  14. Temperature dependence of angular momentum transport across interfaces

    NASA Astrophysics Data System (ADS)

    Chen, Kai; Lin, Weiwei; Chien, C. L.; Zhang, Shufeng

    2016-08-01

    Angular momentum transport in magnetic multilayered structures plays a central role in spintronic physics and devices. The angular momentum currents or spin currents are carried by either quasiparticles such as electrons and magnons, or by macroscopic order parameters such as local magnetization of ferromagnets. Based on the generic interface exchange interaction, we develop a microscopic theory that describes interfacial spin conductance for various interfaces among nonmagnetic metals, ferromagnetic insulators, and antiferromagnetic insulators. Spin conductance and its temperature dependence are obtained for different spin batteries including spin pumping, temperature gradient, and spin Hall effect. As an application of our theory, we calculate the spin current in a trilayer made of a ferromagnetic insulator, an antiferromagnetic insulator, and a nonmagnetic heavy metal. The calculated results on the temperature dependence of spin conductance quantitatively agree with the existing experiments.

  15. TEMPERATURE-DEPENDENT INFRARED OPTICAL CONSTANTS OF OLIVINE AND ENSTATITE

    SciTech Connect

    Zeidler, S.; Mutschke, H.; Posch, Th. E-mail: harald.mutschke@uni-jena.de

    2015-01-10

    Since the Infrared Space Observatory (ISO) mission, it has become clear that dust in circumstellar disks and outflows consists partly of crystalline silicates of pyroxene and olivine type. An exact mineralogical analysis of the dust infrared emission spectra relies on laboratory spectra, which, however, have been mostly measured at room temperature so far. Given that infrared spectral features depend on the thermal excitation of the crystal's vibrational modes, laboratory spectra measured at various (low and high) temperatures, corresponding to the thermal conditions at different distances from the star, can improve the accuracy of such analyses considerably. We have measured the complex refractive index in a temperature range of 10-973 K for one mineral of each of those types of silicate, i.e., for an olivine and an enstatite of typical (terrestrial) composition. Thus, our data extend the temperature range of previous data to higher values and the compositional range to higher iron contents. We analyze the temperature dependence of oscillator frequencies and damping parameters governing the spectral characteristics of the bands and calculate absorption cross-sectional spectra that can be compared with astronomical emission spectra. We demonstrate the usefulness of our new data by comparing spectra calculated for a 100 K dust temperature with the ISO SWS spectrum of IRAS 09425-6040.

  16. Temperature-Dependent Dielectric Properties of Al/Epoxy Nanocomposites

    NASA Astrophysics Data System (ADS)

    Wang, Zijun; Zhou, Wenying; Sui, Xuezhen; Dong, Lina; Cai, Huiwu; Zuo, Jing; Chen, Qingguo

    2016-06-01

    Broadband dielectric spectroscopy was carried out to study the transition in electrical properties of Al/epoxy nanocomposites over the frequency range of 1-107 Hz and the temperature range of -20°C to 200°C. The dielectric permittivity, dissipation factor, and electrical conductivity of the nanocomposites increased with temperature and showed an abrupt increase around the glass transition temperature ( T g). The results clearly reveal an interesting transition of the electrical properties with increasing temperature: insulator below 70°C, conductor at about 70°C. The behavior of the transition in electrical properties of the nanocomposites was explored at different temperatures. The presence of relaxation peaks in the loss tangent and electric modulus spectra of the nanocomposites confirms that the chain segmental dynamics of the polymer is accompanied by the absorption of energy given to the system. It is suggested that the temperature-dependent transition of the electric properties in the nanocomposite is closely associated with the α-relaxation. The large increase in the dissipation factor and electric conductivity depends on the direct current conduction of thermally activated charge carriers resulting from the epoxy matrix above T g.

  17. Temperature dependence of carbon isotope fractionation in CAM plants

    SciTech Connect

    Deleens, E.; Treichel, I.; O'Leary, M.H.

    1985-09-01

    The carbon isotope fractionation associated with nocturnal malic acid synthesis in Kalanchoe daigremontiana and Bryophyllum tubiflorum was calculated from the isotopic composition of carbon-4 of malic acid, after appropriate corrections. In the lowest temperature treatment (17/sup 0/C nights, 23/sup 0/C days), the isotope fractionation for both plants is -4% per thousand (that is, malate is enriched in /sup 13/C relative to the atmosphere). For K. daigremontiana, the isotope fractionation decreases with increasing temperature, becoming approximately 0% per thousand at 27/sup 0/C/33/sup 0/C. Detailed analysis of temperature effects on the isotope fractionation indicates that stomatal aperture decreases with increasing temperature and carboxylation capacity increases. For B. tubiflorum, the temperature dependence of the isotope fractionation is smaller and is principally attributed to the normal temperature dependences of the rates of diffusion and carboxylation steps. The small change in the isotopic composition of remaining malic acid in both species which is observed during deacidification indicates that malate release, rather than decarboxylation, is rate limiting in the deacidification process. 28 references, 1 figure, 4 tables.

  18. A Temperature-Dependent Battery Model for Wireless Sensor Networks

    PubMed Central

    Rodrigues, Leonardo M.; Montez, Carlos; Moraes, Ricardo; Portugal, Paulo; Vasques, Francisco

    2017-01-01

    Energy consumption is a major issue in Wireless Sensor Networks (WSNs), as nodes are powered by chemical batteries with an upper bounded lifetime. Estimating the lifetime of batteries is a difficult task, as it depends on several factors, such as operating temperatures and discharge rates. Analytical battery models can be used for estimating both the battery lifetime and the voltage behavior over time. Still, available models usually do not consider the impact of operating temperatures on the battery behavior. The target of this work is to extend the widely-used Kinetic Battery Model (KiBaM) to include the effect of temperature on the battery behavior. The proposed Temperature-Dependent KiBaM (T-KiBaM) is able to handle operating temperatures, providing better estimates for the battery lifetime and voltage behavior. The performed experimental validation shows that T-KiBaM achieves an average accuracy error smaller than 0.33%, when estimating the lifetime of Ni-MH batteries for different temperature conditions. In addition, T-KiBaM significantly improves the original KiBaM voltage model. The proposed model can be easily adapted to handle other battery technologies, enabling the consideration of different WSN deployments. PMID:28241444

  19. A Temperature-Dependent Battery Model for Wireless Sensor Networks.

    PubMed

    Rodrigues, Leonardo M; Montez, Carlos; Moraes, Ricardo; Portugal, Paulo; Vasques, Francisco

    2017-02-22

    Energy consumption is a major issue in Wireless Sensor Networks (WSNs), as nodes are powered by chemical batteries with an upper bounded lifetime. Estimating the lifetime of batteries is a difficult task, as it depends on several factors, such as operating temperatures and discharge rates. Analytical battery models can be used for estimating both the battery lifetime and the voltage behavior over time. Still, available models usually do not consider the impact of operating temperatures on the battery behavior. The target of this work is to extend the widely-used Kinetic Battery Model (KiBaM) to include the effect of temperature on the battery behavior. The proposed Temperature-Dependent KiBaM (T-KiBaM) is able to handle operating temperatures, providing better estimates for the battery lifetime and voltage behavior. The performed experimental validation shows that T-KiBaM achieves an average accuracy error smaller than 0.33%, when estimating the lifetime of Ni-MH batteries for different temperature conditions. In addition, T-KiBaM significantly improves the original KiBaM voltage model. The proposed model can be easily adapted to handle other battery technologies, enabling the consideration of different WSN deployments.

  20. Temperature dependence of resonance Raman spectra of carotenoids

    NASA Astrophysics Data System (ADS)

    Andreeva, A.; Apostolova, I.; Velitchkova, M.

    2011-04-01

    To understand the mechanism of the photoprotective and antioxidative functions of carotenoids, it is essential to have a profound knowledge of their excited electronic and vibronic states. In the present study we investigate the most powerful antioxidants: β-carotene and lutein by means of resonance Raman spectroscopy. The aim was to study in detail their Raman spectra in solution at room temperature and their changes as a function of temperature. To measure the spectra in their natural environment pyridine has been used as a solvent. It has been chosen because of its polarizability ( n = 1.5092) which is close to that of membrane lipids and proteins. The temperature dependence of the most intensive ν1 band in the range from 77 K to 295 K at 514.5 nm excitation has been obtained. It was found that in pyridine the C dbnd C stretching frequency, its intensity, line shape, and line width are very sensitive to the temperature (the sensitivity being different for the two studied carotenoids). The observed linear temperature dependence of the C dbnd C stretching frequency is explained by a mechanism involving changes of the vibronic coupling and the extent of π-electron delocalization. The different behavior of the temperature-induced broadening of the ν1 band and its intensity for the two studied carotenoids can be associated with the different nature of their solid matrices: glassy for β-carotene and crystalline-like for lutein, owing to their different chemical structures.

  1. Temperature dependence of denitrification in phototrophic river biofilms.

    PubMed

    Boulêtreau, S; Salvo, E; Lyautey, E; Mastrorillo, S; Garabetian, F

    2012-02-01

    Denitrification is an ecosystem service of nitrogen load regulation along the terrestrial-freshwater-marine continuum. The present study documents the short-term temperature sensitivity of denitrification enzyme activity in phototrophic river biofilms as a typical microbial assemblage of this continuum. Denitrification measurements were performed using the acetylene inhibition method at four incubation temperatures: 1.1, 12.1, 21.2 and 30.9°C. For this range of temperature, N(2)O production could be fitted to an exponential function of incubation temperature, yielding mean (±standard error) activation energy of 1.42 (±0.24) eV and Q(10) of 7.0 (±1.4). This first quantification of denitrification enzyme activity temperature dependence in phototrophic river biofilms compares with previous studies performed in soils and sediments. This demonstrates the high temperature dependence of denitrification as compared to other community-level metabolisms such as respiration or photosynthesis. This result suggests that global warming can unbalance natural community metabolisms in phototrophic river biofilms and affect their biogeochemical budget.

  2. On the Temperature Dependence of Enzyme-Catalyzed Rates.

    PubMed

    Arcus, Vickery L; Prentice, Erica J; Hobbs, Joanne K; Mulholland, Adrian J; Van der Kamp, Marc W; Pudney, Christopher R; Parker, Emily J; Schipper, Louis A

    2016-03-29

    One of the critical variables that determine the rate of any reaction is temperature. For biological systems, the effects of temperature are convoluted with myriad (and often opposing) contributions from enzyme catalysis, protein stability, and temperature-dependent regulation, for example. We have coined the phrase "macromolecular rate theory (MMRT)" to describe the temperature dependence of enzyme-catalyzed rates independent of stability or regulatory processes. Central to MMRT is the observation that enzyme-catalyzed reactions occur with significant values of ΔCp(‡) that are in general negative. That is, the heat capacity (Cp) for the enzyme-substrate complex is generally larger than the Cp for the enzyme-transition state complex. Consistent with a classical description of enzyme catalysis, a negative value for ΔCp(‡) is the result of the enzyme binding relatively weakly to the substrate and very tightly to the transition state. This observation of negative ΔCp(‡) has important implications for the temperature dependence of enzyme-catalyzed rates. Here, we lay out the fundamentals of MMRT. We present a number of hypotheses that arise directly from MMRT including a theoretical justification for the large size of enzymes and the basis for their optimum temperatures. We rationalize the behavior of psychrophilic enzymes and describe a "psychrophilic trap" which places limits on the evolution of enzymes in low temperature environments. One of the defining characteristics of biology is catalysis of chemical reactions by enzymes, and enzymes drive much of metabolism. Therefore, we also expect to see characteristics of MMRT at the level of cells, whole organisms, and even ecosystems.

  3. Multi-Relaxation Temperature-Dependent Dielectric Model of the Arctic Soil at Positive Temperatures

    NASA Astrophysics Data System (ADS)

    Savin, I. V.; Mironov, V. L.

    2014-11-01

    Frequency spectra of the dielectric permittivity of the Arctic soil of Alaska are investigated with allowance for the dipole and ionic relaxation of molecules of the soil moisture at frequencies from 40 MHz to 16 GHz and temperatures from -5 to +25°С. A generalized temperature-dependent multi-relaxation refraction dielectric model of the humid Arctic soil is suggested.

  4. Evaluation of the formation of a junctional DNA nanostructure through annealing curve analysis.

    PubMed

    Shin, Seung Won; Park, Kyung Soo; Um, Soong Ho

    2015-02-20

    During the self-assembly of different numbers of oligonucleotides comprising junctional DNA nanostructures, a change in environmental variables (e.g., temperature or salt concentration) has a substantial influence on the final products. Further, distinctive annealing temperatures of oligonucleotides are observed depending on the state of hybridization. Here, we present an evaluation of the annealing characteristics of oligonucleotides for the formation of a simple junctional DNA nanostructure using an annealing curve analysis. This method may be useful for analyzing the formation of complex junctional DNA nanostructures.

  5. Temperature dependent soft x-ray absorption spectroscopy of liquids.

    PubMed

    Meibohm, Jan; Schreck, Simon; Wernet, Philippe

    2014-10-01

    A novel sample holder is introduced which allows for temperature dependent soft x-ray absorption spectroscopy of liquids in transmission mode. The setup is based on sample cells with x-ray transmissive silicon nitride windows. A cooling circuit allows for temperature regulation of the sample liquid between -10 °C and +50 °C. The setup enables to record soft x-ray absorption spectra of liquids in transmission mode with a temperature resolution of 0.5 K and better. Reliability and reproducibility of the spectra are demonstrated by investigating the characteristic temperature-induced changes in the oxygen K-edge x-ray absorption spectrum of liquid water. These are compared to the corresponding changes in the oxygen K-edge spectra from x-ray Raman scattering.

  6. Temperature-dependent liquid metal flowrate control device

    DOEpatents

    Carlson, Roger D.

    1978-01-01

    A temperature-dependent liquid metal flowrate control device includes a magnet and a ferromagnetic member defining therebetween a flow path for liquid metal, the ferromagnetic member being formed of a material having a curie temperature at which a change in the flow rate of the liquid metal is desired. According to the preferred embodiment the magnet is a cylindrical rod magnet axially disposed within a cylindrical member formed of a curie material and having iron pole pieces at the ends. A cylindrical iron shunt and a thin wall stainless steel barrier are disposed in the annulus between magnet and curie material. Below the curie temperature flow between steel barrier and curie material is impeded and above the curie temperature flow impedance is reduced.

  7. Temperature dependent Raman and DFT study of creatine.

    PubMed

    Gangopadhyay, Debraj; Sharma, Poornima; Singh, Ranjan K

    2015-01-01

    Temperature dependent Raman spectra of creatine powder have been recorded in the temperature range 420-100K at regular intervals and different clusters of creatine have been optimized using density functional theory (DFT) in order to determine the effect of temperature on the hydrogen bonded network in the crystal structure of creatine. Vibrational assignments of all the 48 normal modes of the zwitterionic form of creatine have been done in terms of potential energy distribution obtained from DFT calculations. Precise analysis gives information about thermal motion and intermolecular interactions with respect to temperature in the crystal lattice. Formation of higher hydrogen bonded aggregates on cooling can be visualized from the spectra through clear signature of phase transition between 200K and 180K.

  8. Temperature Dependent Anisotropy of Oxypnictide Superconductors Studied by Torque Magnetometry

    NASA Astrophysics Data System (ADS)

    Weyeneth, Stephen; Puzniak, Roman; Zhigadlo, Nikolai D.; Katrych, Sergiy; Bukowski, Zbigniew; Karpinski, Janusz; Mosele, Urs; Kohout, Stefan; Roos, Josef; Keller, Hugo

    2009-03-01

    Single crystals of different oxypnictide superconductors of the family ReFeAsO1-xFy (Re = Sm, Nd, Pr) with various carrier dopings and with masses m˜100 ng have been investigated by means of torque magnetometry. We present most recent data, obtained by using highly sensitive piezoresistive torque sensors from which the superconducting anisotropy parameter γ and the in-plane magnetic penetration depth λab were extracted. As an important result γ was found to increase strongly as the temperature is decreased from Tc down to low temperatures. This unconventional temperature dependence of γ is similar to that observed in the two-band superconductor MgB2 and cannot be explained within the classical Ginzburg-Landau model. This scenario strongly suggests a new multi-band mechanism in the novel class of oxypnictide high-temperature superconductors.

  9. A nanoscale temperature-dependent heterogeneous nucleation theory

    SciTech Connect

    Cao, Y. Y.; Yang, G. W.

    2015-06-14

    Classical nucleation theory relies on the hypothetical equilibrium of the whole nucleation system, and neglects the thermal fluctuations of the surface; this is because the high entropic gains of the (thermodynamically extensive) surface would lead to multiple stable states. In fact, at the nanometer scale, the entropic gains of the surface are high enough to destroy the stability of the thermal equilibrium during nucleation, comparing with the whole system. We developed a temperature-dependent nucleation theory to elucidate the heterogeneous nucleation process, by considering the thermal fluctuations based on classical nucleation theory. It was found that the temperature not only affected the phase transformation, but also influenced the surface energy of the nuclei. With changes in the Gibbs free energy barrier, nucleation behaviors, such as the nucleation rate and the critical radius of the nuclei, showed temperature-dependent characteristics that were different from those predicted by classical nucleation theory. The temperature-dependent surface energy density of a nucleus was deduced based on our theoretical model. The agreement between the theoretical and experimental results suggested that the developed nucleation theory has the potential to contribute to the understanding and design of heterogeneous nucleation at the nanoscale.

  10. Temperature dependence of oriented growth of Pb[Yb1/2Nb1/2]O3–PbTiO3 thin films deposited on LNO/Si substrates

    PubMed Central

    Zhou, Q.F.; Shung, K.K.; Zhang, Q.Q.; Djuth, F.T.

    2009-01-01

    (1−x)Pb[Yb1/2Nb1/2]O3−xPbTiO3 (PYbN–PT, x=0.5)(001) oriented thin films were deposited onto LaNiO3 (LNO)/Si(001) substrates by sol–gel processing. The crystallographic texture of the films was controlled by the annealing temperature and heating rate. Highly (001) oriented LNO thin films were prepared by a simple metal organic decomposition technique, and the samples were annealed at 700 °C and 750 °C using a rapid thermal annealing process and furnace, respectively. X-ray diffraction analysis revealed that the films of PYbN-PT were highly (001) oriented along LNO/Si substrates. The degree of PYbN-PT orientation is dependent on the heating rate and annealing temperature. Annealing heating rate of 10 °C/s and high annealing temperature near 750 °C produce the greatest degree of (001) orientation, which gives rise to improved dielectric properties. PMID:20890456

  11. Time- and temperature-dependent failures of a bonded joint

    NASA Astrophysics Data System (ADS)

    Sihn, Sangwook

    This dissertation summarizes my study of time- and temperature-dependent behavior of a tubular lap bonded joint to provide a design methodology for windmill blade structures. The bonded joint is between a cast-iron rod and a GFRP composite pipe. The adhesive material is an epoxy containing chopped glass fibers. We proposed a new fabrication method to make concentric and void-less specimens of the tubular joint with a thick adhesive bondline to stimulate the root bond of a blade. The thick bondline facilitates the joint assembly of actual blades. For a better understanding of the behavior of the bonded joint, we studied viscoelastic behavior of the adhesive materials by measuring creep compliance at several temperatures during loading period. We observed that the creep compliance depends highly on the period of loading and the temperature. We applied time-temperature equivalence to the creep compliance of the adhesive material to obtain time-temperature shift factors. We also performed constant-rate of monotonically increased uniaxial tensile tests to measure static strength of the tubular lap joint at several temperatures and different strain-rates. We observed two failure modes from load-deflection curves and failed specimens. One is the brittle mode, which was caused by weakness of the interfacial strength occurring at low temperature and short period of loading. The other is the ductile mode, which was caused by weakness of the adhesive material at high temperature and long period of loading. Transition from the brittle to the ductile mode appeared as the temperature or the loading period increased. We also performed tests under uniaxial tensile-tensile cyclic loadings to measure fatigue strength of the bonded joint at several temperatures, frequencies and stress ratios. The fatigue data are analyzed statistically by applying the residual strength degradation model to calculate statistical distribution of the fatigue life. Combining the time-temperature

  12. Temperature-Dependent Giant Magnetoimpedance Effect in Amorphous Soft Magnets

    NASA Astrophysics Data System (ADS)

    Kurniawan, M.; Roy, R. K.; Panda, A. K.; Greve, D. W.; Ohodnicki, P.; McHenry, M. E.

    2014-12-01

    Giant magnetoimpedance (GMI)-based devices offer potential as next-generation low-cost, flexible, ultrasensitive sensors. They can be used in applications that include current sensors, field sensors, stress sensors, and others. Challenging applications involve operation at high temperatures, and therefore studies of GMI temperature dependence and performance of soft magnetic materials are needed. We present a high-temperature GMI study on an amorphous soft magnetic microwire from room temperature to 560°C. The GMI ratio was observed to be nearly constant at ˜86% at low temperatures and to decrease rapidly at ˜290°C, finally reaching a near-zero value at 500°C. The rapid drop in GMI ratio at 290°C is associated with a reduction in the long-range ferromagnetic order as measured by the spontaneous magnetization ( M) at the Curie temperature ( T c). We also correlated the impedance with the magnetic properties of the material. From room temperature to 290°C, the impedance was found to be proportional to the square root of the magnetization to magnetic anisotropy ratio. Lastly, M( T) has been fit using a Handrich-Kobe model, which describes the system with a modified Brillouin function and an asymmetrical distribution of exchange interactions. We infer that the structural fluctuations of the amorphous phase result in a relatively small asymmetry in the fluctuation parameters.

  13. The mass and speed dependence of meteor air plasma temperatures

    NASA Technical Reports Server (NTRS)

    Jenniskens, Peter; Laux, Christophe O.; Wilson, Michael A.; Schaller, Emily L.

    2004-01-01

    The speed and mass dependence of meteor air plasma temperatures is perhaps the most important data needed to understand how small meteoroids chemically change the ambient atmosphere in their path and enrich the ablated meteoric organic matter with oxygen. Such chemistry can play an important role in creating prebiotic compounds. The excitation conditions in various air plasma emissions were measured from high-resolution optical spectra of Leonid storm meteors during NASA's Leonid Multi-Instrument Aircraft Campaign. This was the first time a sufficient number and range of temperature measurements were obtained to search for meteoroid mass and speed dependencies. We found slight increases in temperature with decreasing altitude, but otherwise nearly constant values for meteoroids with speeds between 35 and 72 km/s and masses between 10(-5) g and 1 g. We conclude that faster and more massive meteoroids produce a larger emission volume, but not a higher air plasma temperature. We speculate that the meteoric plasma may be in multiphase equilibrium with the ambient atmosphere, which could mean lower plasma temperatures in a CO(2)-rich early Earth atmosphere.

  14. The mass and speed dependence of meteor air plasma temperatures.

    PubMed

    Jenniskens, Peter; Laux, Christophe O; Wilson, Michael A; Schaller, Emily L

    2004-01-01

    The speed and mass dependence of meteor air plasma temperatures is perhaps the most important data needed to understand how small meteoroids chemically change the ambient atmosphere in their path and enrich the ablated meteoric organic matter with oxygen. Such chemistry can play an important role in creating prebiotic compounds. The excitation conditions in various air plasma emissions were measured from high-resolution optical spectra of Leonid storm meteors during NASA's Leonid Multi-Instrument Aircraft Campaign. This was the first time a sufficient number and range of temperature measurements were obtained to search for meteoroid mass and speed dependencies. We found slight increases in temperature with decreasing altitude, but otherwise nearly constant values for meteoroids with speeds between 35 and 72 km/s and masses between 10(-5) g and 1 g. We conclude that faster and more massive meteoroids produce a larger emission volume, but not a higher air plasma temperature. We speculate that the meteoric plasma may be in multiphase equilibrium with the ambient atmosphere, which could mean lower plasma temperatures in a CO(2)-rich early Earth atmosphere.

  15. Temperature dependence of the scanning performance of an electrostatic microscanner

    NASA Astrophysics Data System (ADS)

    Ishikawa, Noriaki; Ikeda, Kentaro; Sawada, Renshi

    2016-03-01

    An optical microscanner is one examples of an optical-MEMS device, which scans a laser beam across one or two dimensions by reflecting it. The microscanner has a range of applications, such as laser printers, laser displays and bio-medical imaging. For each application, the mirror is required to oscillated at a certain frequency and optical scan angle. However, its scanning performance varies with temperature. To address this issue, the temperature dependence of the natural frequency of a 1D electrostatic microscanner formed of single-crystal silicon is investigated both theorectically and experimentally in this paper. As the temperature rises from 30 °C to 80 °C, the calculated value of the natural frequency decreased from 1910.81 Hz to 1908.68 Hz, and the experimental value decreased from 2123.85 Hz to 2120.56 Hz. The percentage changes in calculated and experimental results were  -0.11% and  -0.15%, and thus the former was consistent with the latter. The factors of the variation of natural frequency are the deformation caused by thermal expansion and the temperature dependence of shear modulus. The results of theoretical calculations indicated that the principal factor in the change of natural frequency was the shear modulus on the temperature.

  16. Annealing of gold nanostructures sputtered on polytetrafluoroethylene

    PubMed Central

    2011-01-01

    Gold nanolayers sputtered on polytetrafluoroethylene (PTFE) surface and their changes induced by post-deposition annealing at 100°C to 300°C are studied. Changes in surface morphology and roughness are examined by atomic force microscopy, electrical sheet resistance by two point technique, zeta potential by electrokinetic analysis and chemical composition by X-ray photoelectron spectroscopy (XPS) in dependence on the gold layer thickness. Transition from discontinuous to continuous gold coverage takes place at the layer thicknesses 10 to 15 nm and this threshold remains practically unchanged after the annealing at the temperatures below 200°C. The annealing at 300°C, however, leads to significant rearrangement of the gold layer and the transition threshold increases to 70 nm. Significant carbon contamination and the presence of oxidized structures on gold-coated samples are observed in XPS spectra. Gold coating leads to a decrease in the sample surface roughness. Annealing at 300°C of pristine PTFE and gold-coated PTFE results in significant increase of the sample surface roughness. PMID:22078024

  17. Temperature-Dependent Adhesion of Graphene Suspended on a Trench.

    PubMed

    Budrikis, Zoe; Zapperi, Stefano

    2016-01-13

    Graphene deposited over a trench has been studied in the context of nanomechanical resonators, where experiments indicate adhesion of the graphene sheet to the trench boundary and sidewalls leads to self-tensioning; however, this adhesion is not well understood. We use molecular dynamics to simulate graphene deposited on a trench and study how adhesion to the sidewalls depends on substrate interaction, temperature, and curvature of the edge of the trench. Over the range of parameters we study, the depth at the center of the sheet is approximately linear in substrate interaction strength and temperature but not trench width, and we explain this using a one-dimensional model for the sheet configuration.

  18. Temperature Dependence of Thermal Expansion for Geophysical Minerals

    NASA Astrophysics Data System (ADS)

    Fang, Zheng-Hua

    2015-07-01

    A simple and straightforward method for evaluating and predicting the volume and volumetric thermal expansivity for geophysical minerals at high temperatures is developed in this paper based on the approximations that the product of the thermal expansion coefficient and the isothermal bulk modulus as well as the isothermal bulk modulus are both linearly dependent with temperature. The tests on four geophysical minerals (MgO, CaO, , and lend strong support to the validity of this method. The analyses and comparisons presented here demonstrate that this method is far better than similar models given by earlier workers.

  19. Temperature-dependent dielectric properties of a thermoplastic gelatin

    NASA Astrophysics Data System (ADS)

    Landi, Giovanni; Neitzert, Heinz C.; Sorrentino, Andrea

    2016-05-01

    The frequency and the temperature dependence of the dielectric properties of a thermoplastic gelatin based bio-material have been investigated. At lower frequencies the dielectric response is strongly affected by charge carrier accumulation at the electrodes which modifies the dominating hopping conduction mechanism. The variation of the ac conductivity with frequency obeys a Jonscher type power law except for a small deviation in the low frequency range due to the electrode polarization effect. The master curve of the ac conductivity data shows that the conductivity relaxation of the gelatin is temperature independent.

  20. Temperature Dependent Electron Transport Studies for Diffuse Discharge Switching Applications

    DTIC Science & Technology

    1985-06-01

    of <e>, k (<e >), for C2F6 and C3F8 at gas temperature up to 7!fu K. These results may be used to under stand the influence of elevated gas...of k (<&>) have also been performed in c3F8 as a functionaof gas temperature up to 750 R in Ar buffer gas (over the mean electron energy range 0.76...dependent electron attachment pro- cesses are negligible indicating that electron attachment to C3F8 at t hese t emperatures i s predomi- nantly dissociati