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Sample records for annealing time effect

  1. Effects of annealing time on the structure, morphology, and stress of gold-chromium bilayer film

    NASA Astrophysics Data System (ADS)

    Zhang, Hong; Jin, Yun-Xia; Wang, Hu; Kong, Fang-Yu; Huang, Hao-Peng; Cui, Yun

    2016-10-01

    In this work, a 200-nm-thick gold film with a 10-nm-thick chromium layer used as an adhesive layer is fabricated on fused silica by the electron beam evaporation method. The effects of annealing time at 300 °C on the structure, morphology and stress of the film are studied. We find that chromium could diffuse to the surface of the film by formatting a solid solution with gold during annealing. Meanwhile, chromium is oxidized on the surface and diffused downward along the grain grooves in the gold film. The various operant mechanisms that change the residual stresses of gold films for different annealing times are discussed. Project supported by the National Natural Science Foundation of China (Grant No. 61405225).

  2. The Effect of Argon Ambient Pressure and Annealing Time on Bulk MgB2 Superconductor

    NASA Astrophysics Data System (ADS)

    Erdem, Murat; Ozturk, Ozgur; Asikuzun, Elif; Kaya, Seydanur; Safran, Serap; Kilic, Ahmet; Terzioglu, Cabir

    2015-03-01

    The effects of Ar ambient pressure (vacuum, 0B, 10B and 20B) and annealing times (0.5 h and 1 h) on microstructural, superconducting and mechanical properties of bulk superconducting MgB2 are investigated. The samples are produced using the solid state reaction method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements were performed for determination of the crystal structure, and surface morphology of MgB2 samples, respectively. The superconducting properties were studied by AC magnetic susceptibility and DC resistivity measurements. Increasing the Ar pressure decreased the lattice parameters and hence the average grain size. Increasing the annealing time results in larger lattice parameters and larger grain formation. The susceptibility measurements revealed two step transition which is reminiscent of granular superconductors. The intra-grain transition temperature is determined to be 38.4 K for all samples. The inter-grain transition temperatures of 37.2 K is obtained for samples produced under Ar ambient. The samples produced under Ar ambient have better superconducting properties than the ones produced in vacuum. Increasing the annealing time under vacuum further decreases the superconducting properties probably due to Mg loss. This research is supported by Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KUBAP-03/2012-03.

  3. Effect of annealing time of an ice crystal on the activity of type III antifreeze protein.

    PubMed

    Takamichi, Manabu; Nishimiya, Yoshiyuki; Miura, Ai; Tsuda, Sakae

    2007-12-01

    Antifreeze proteins (AFPs) possess a unique ability to bind to a seed ice crystal to inhibit its growth. The strength of this binding has been evaluated by thermal hysteresis (TH). In this study, we examined the dependence of TH on experimental parameters, including cooling rate, annealing time, annealing temperature and the size of the seed ice crystal for an isoform of type III AFP from notched-fin eelpout (nfeAFP8). TH of nfeAFP8 dramatically decreased when using a fast cooling rate (0.20 degrees C x min(-1)). It also decreased with increasing seed crystal size under a slow cooling rate (0.01 degrees C x min(-1)), but such dependence was not detected under the fast cooling rate. TH was enhanced 1.4- and 2.5-fold when ice crystals were annealed for 3 h at 0.05 and 0.25 degrees C below T(m), respectively. After annealing for 2 h at 0.25 degrees C below T(m), TH activity showed marked dependence on the size of ice crystals. These results suggest that annealing of an ice crystal for 2-3 h significantly increased the TH value of type III AFP. Based on a proposed adsorption-inhibition model, we assume that type III AFP undergoes additional ice binding to the convex ice front over a 2-3 h time scale, which results in the TH dependence on the annealing time.

  4. Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

    NASA Astrophysics Data System (ADS)

    Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

    2015-02-01

    In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

  5. Tritium release from neutron irradiated beryllium: Kinetics, long-time annealing and effect or crack formation

    SciTech Connect

    Scaffidi-Argentina, F.; Werle, H.

    1995-09-01

    Since beryllium is considered as one of the best neutron multiplier materials in the blanket of the next generation fusion reactors, several studies have been started to evaluate its behaviour under irradiation during both operating and accidental conditions. Based on safety considerations, tritium produced in beryllium during neutron irradiation represents one important issue, therefore it is necessary to investigate tritium transport processes by using a comprehensive mathematical model and comparing its predictions with well characterized experimental tests. Because of the difficulties in extrapolating the short-time tritium release tests to a longer time scale, also long-time annealing experiments with beryllium samples from the SIBELIUS irradiation. have been carried out at the Forschungszentrum Karlsruhe. Samples were annealed up to 12 months at temperatures up to 650{degrees}C. The inventory after annealing was determined by heating the samples up to 1050{degrees}C with a He+0.1 vo1% H{sub 2} purge gas. Furthermore, in order to investigate the likely effects of cracks formation eventually causing a faster tritium release from beryllium, the behaviour of samples irradiated at low temperature (40-50{degrees}C) but up to very high fast neutron fluences (0.8-3.9{center_dot}10{sup 22} cm{sup -2}, E{sub n}{ge}1 MeV) in the BR2 reactor has been investigated. Tritium was released by heating the beryllium samples up to 1050{degrees}C and purging them with He+0.1 vo1% H{sub 2}. Tritium release from high-irradiated beryllium samples showed a much faster kinetics than from the low-irradiated ones, probably because of crack formation caused by thermal stresses in the brittle material and/or by helium bubbles migration. The obtained experimental data have been compared with predictions of the code ANFIBE with the goal to better understand the physical mechanisms governing tritium behaviour in beryllium and to assess the prediction capabilities of the code.

  6. A universal value of effective annealing time for rapid oxide nucleation and growth under pulsed ultraviolet laser irradiation.

    PubMed

    Nakajima, Tomohiko; Shinoda, Kentaro; Tsuchiya, Tetsuo

    2013-09-14

    The effective annealing times (t(eff)) for nucleating various oxides from an amorphous matrix under nanosecond pulsed laser irradiation have been determined. The oxides, which had perovskite, bixbyite, anatase, and pyrochlore structures, showed similar t(eff) values for crystal nucleation of around 60 ns. This indicates that the effective annealing time is a good universal value for evaluating pulsed laser-induced oxide nucleation. Time-resolved resistance measurements of tin-doped In2O3 thin films under pulsed laser irradiation showed that crystal nucleation and rapid growth proceeded spontaneously with an instantaneous temperature rise. PMID:23881113

  7. Effects of annealing time on the recovery of Charpy V-notch properties of irradiated high-copper weld metal

    SciTech Connect

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1994-12-31

    One of the options to mitigate the effects of irradiation on reactor pressure vessels is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. An important issue to be resolved is the effect on the toughness properties of reirradiating a vessel that has been annealed. This paper describes the annealing response of irradiated high-copper submerged-arc weld HSSI 73W. For this study, the weld has been annealed at 454 C (850 F) for lengths of time varying between 1 and 14 days. The Charpy V-notch 41-J (30-ft-lb) transition temperature (TT{sub 41J}) almost fully recovered for the longest period studied, but recovered to a lesser degree for the shorter periods. No significant recovery of the TT{sub 41J} was observed for a 7-day anneal at 343 C (650 F). At 454 C for the durations studied, the values of the upper-shelf impact energy of irradiated and annealed weld metal exceeded the values in the unirradiated condition. Similar behavior was observed after aging the unirradiated weld metal at 460 and 490 C for 1 week.

  8. Effect of Annealing Time on Microstructural Evolution and Deformation Characteristics in 10Mn1.5Al TRIP Steel

    NASA Astrophysics Data System (ADS)

    Han, Qihang; Zhang, Yulong; Wang, Li

    2015-05-01

    To investigate microstructural evolution and its effects on the deformation behaviors of cold-rolled 10Mn1.5Al TRIP steel, a series of intercritical annealing treatments with various holding times from 3 minutes to 48 hours were conducted. With the increase of the holding time from 3 minutes to 12 hours, the elongation was improved from 15 to 42 pct, while the tensile strength was only reduced from 1210 to 1095 MPa; the strength-ductility combination thus exceeded 45 GPa pct. Austenite was found to coexist with martensite within deformed grains, which reduced the strain concentration at the interface. The austenite transformation fraction, as measured from the {220} peaks, after 3 minutes annealing was half that after 12 hours annealing. This is an indication that the slip systems were more easily activated in the micro-scaled grains compared with nano-scaled grains. Therefore, although the stability of austenite would have increased during annealing, size-induced slip suppression was reduced. Thus, more strain was accommodated in the austenite, facilitating a greater strain-induced transformation and better ductility.

  9. Enthalpy relaxation and annealing effect in polystyrene.

    PubMed

    Sakatsuji, Waki; Konishi, Takashi; Miyamoto, Yoshihisa

    2013-07-01

    The effects of thermal history on the enthalpy relaxation in polystyrene are studied by differential scanning calorimetry. The temperature dependence of the specific heat in the liquid and the glassy states, that of relaxation time, and the exponent of the Kohlrausch-Williams-Watts function are determined by measurements of the thermal response against sinusoidal temperature variation. A phenomenological model equation previously proposed to interpret the memory effect in the frozen state is applied to the enthalpy relaxation and the evolution of entropy under a given thermal history is calculated. The annealing below the glass transition temperature produces two effects on enthalpy relaxation: the decay of excess entropy with annealing time in the early stage of annealing and the increase in relaxation time due to physical aging in the later stage. The crossover of these effects is reflected in the variation of temperature of the maximum specific heat observed in the heating process after annealing and cooling.

  10. Effect of Annealing Time Process on the pH Sensitivity of Spin-coated TiO2/ ZnO Bilayer Film

    NASA Astrophysics Data System (ADS)

    Rahman, R. A.; Zulkefle, M. A.; Yusof, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2015-11-01

    This paper presents an investigation on titanium dioxide (TiO2) and zinc oxide (ZnO) bilayer film, which is used as sensing membrane for extended-gate field effect transistor (EGFET) for pH sensing application. TiO2/ZnO thin films were deposited using sol-gel spin coating method on indium tin oxide (ITO) substrates. After the deposition, the bilayer films were annealed at constant temperatures which is 400 °C for 15, 30, 40 and 60 minutes. The sensitivity of the TiO2 thin film towards pH buffer solution was measured by dipping the sensing membrane in pH4, pH7 and pH10 buffer solution. By varying the annealing time, we found that the TiO2/ZnO thin film annealed at 400°C for 15 minutes gave the highest sensitivity compared to other annealing conditions, with the value of 64.87 mV/pH.

  11. Effective dopant activation via low temperature microwave annealing of ion implanted silicon

    NASA Astrophysics Data System (ADS)

    Zhao, Zhao; David Theodore, N.; Vemuri, Rajitha N. P.; Das, Sayantan; Lu, Wei; Lau, S. S.; Alford, T. L.

    2013-11-01

    Susceptor-assisted microwave annealing enables effective dopant activation, at low temperatures, in ion-implanted Si. Given similar thermal budgets for microwave annealing and rapid thermal annealing (RTA), sheet resistances of microwave annealed Si, with either B+ or P+ implants, are lower than the values obtained using RTA. The fraction of dopants activated is as high as 18% for B+ implants and 64% for P+ implants. Dopant diffusion is imperceptible after microwave annealing, but significant after RTA, for P+ implanted Si samples with the same dopant activation. Microwave annealing achieves such properties using shorter anneal times and lower peak temperatures compared to RTA.

  12. Annealing effects on strain and stress sensitivity of polymer optical fibre based sensors

    NASA Astrophysics Data System (ADS)

    Pospori, A.; Marques, C. A. F.; Zubel, M. G.; Sáez-Rodríguez, D.; Nielsen, K.; Bang, O.; Webb, D. J.

    2016-04-01

    The annealing effects on strain and stress sensitivity of polymer optical fibre Bragg grating sensors after their photoinscription are investigated. PMMA optical fibre based Bragg grating sensors are first photo-inscribed and then they were placed into hot water for annealing. Strain, stress and force sensitivity measurements are taken before and after annealing. Parameters such as annealing time and annealing temperature are investigated. The change of the fibre diameter due to water absorption and the annealing process is also considered. The results show that annealing the polymer optical fibre tends to increase the strain, stress and force sensitivity of the photo-inscribed sensor.

  13. Origin of reverse annealing effect in hydrogen-implanted silicon

    SciTech Connect

    Di, Zengfeng; Nastasi, Michael A; Wang, Yongqiang

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  14. Reduction of Annealing Times for Energy Conservation in Aluminum

    SciTech Connect

    Anthony D. Rollett; Hasso Weiland; Mohammed Alvi; Abhijit Brahme

    2005-08-31

    Carnegie Mellon University was teamed with the Alcoa Technical Center with support from the US Dept. of Energy (Office of Industrial Technology) and the Pennsylvania Technology Investment Authority (PTIA) to make processing of aluminum less costly and more energy efficient. Researchers in the Department of Materials Science and Engineering have investigated how annealing processes in the early stages of aluminum processing affect the structure and properties of the material. Annealing at high temperatures consumes significant amounts of time and energy. By making detailed measurements of the crystallography and morphology of internal structural changes they have generated new information that will provide a scientific basis for shortening processing times and consuming less energy during annealing.

  15. Annealing effects on optical properties of natural alexandrite

    NASA Astrophysics Data System (ADS)

    Fernandes Scalvi, Rosa M.; Li, Máximo Siu; Scalvi, Luis V. A.

    2003-11-01

    Natural alexandrite (BeAl2O4:Cr3+) crystals are investigated as regards the effects of annealing on their optical properties. Optical absorption spectra are measured from the ultraviolet (190 nm) to the near infrared (900 nm), for a sample subjected to consecutive annealing processes, where time and temperature are varied. Besides this, luminescence spectra are simultaneously obtained for this sample, excited with a Kr+ laser source, tuned on an ultraviolet multi-line mode (337.5, 350.7 and 356.4 nm). We observe from absorption as well as from emission data that annealing mainly influences the distribution of Cr3+ and Fe3+ ions, located on sites of a mirror plane (Cs symmetry), which are responsible for the optical properties of alexandrite. The results obtained lead to the conclusion that annealing induces a modification of the population of Cr3+ on Cs sites as well as on sites located on an inversion plane (Ci). Annealing could improve the optical properties of this material, as regards its application as a tunable laser.

  16. Watching the Annealing Process One Polymer Chain at a Time

    SciTech Connect

    Vogelsang, Jan; Brazard, Johanna; Adachi, Takuji; Bolinger, Joshua; Barbara, Paul F.

    2011-02-03

    By using single-molecule spectroscopy (SMS) several effects of solvent vapor induced annealing (SVA) were studied directly on single conjugated polymers, e.g.: SVA-induced translocations, folding/unfolding dynamics, and changes in the morphological order. It is shown that single chains can be trapped by spin-coating in a disordered conformation and subsequent SVA leads to an equilibrated, highly ordered conformation.

  17. Annealing effects on cathodoluminescence of zircon

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Y.; Nishido, H.; Noumi, Y.

    2011-12-01

    U-Pb zircon dating (e. g., SHRIMP) is an important tool to interpret a history of the minerals at a micrometer-scale, where cathodoluminescence (CL) imaging allows us to recognize internal zones and domains with different chemical compositions and structural disorder at high spatial resolution. The CL of zircon is attributed by various types of emission centers, which are extrinsic ones such as REE impurities and intrinsic ones such as structural defects. Metamictization resulted from radiation damage to the lattice by alpha particles from the decay of U and Th mostly causes an effect on the CL features of zircon as a defect center. However, slightly radiation-damaged zircon, which is almost nondetectable by XRD, has not been characterized using CL method. In this study, annealing effects on CL of zircon has been investigated to clarify a recovery process of the damaged lattice at low radiation dose. A single crystal of zircon from Malawi was selected for CL measurements. It contains HfO2: 2.30 w.t %, U: 241 ppm and Th: 177 ppm. Two plate samples perpendicular to c and a axes were prepared for annealing experiments during 12 hours from room temperature to 1400 degree C. Color CL images were captured using a cold-cathode microscope (Luminoscope: Nuclide ELM-3R). CL spectral measurements were conducted using an SEM (JEOL: JSM-5410) combined with a grating monochromator (Oxford: Mono CL2) to measure CL spectra ranging from 300 to 800 nm in 1 nm steps with a temperature controlled stage. The dispersed CL was collected by a photoncounting method using a photomultiplier tube (Hamamatsu: R2228) and converted to digital data. All CL spectra were corrected for the total instrumental response. Spectral analysis reveals an anisotropy of the CL emission bands related to intrinsic defect center in blue region, radiation-induced defect center from 500 to 700 nm, and trivalent Dy impurity center at 480 and 580 nm, but their relative intensities are almost constant. CL on the

  18. Annealing Polymer Nanocomposite Fibers and Films Via Photothermal Heating: Effects On Overall Crystallinity and Morphology

    NASA Astrophysics Data System (ADS)

    Viswanath, Vidya

    Metal nanoparticles embedded within polymeric systems can act as localized heat sources, facilitating in situ polymer processing. When irradiated with light resonant with the nanoparticle's surface plasmon resonance (SPR), a non-equilibrium electron distribution is generated which rapidly transfers energy into the surrounding medium, resulting in a temperature increase in the immediate region around the particle. This work compares the utility of such photothermal heating versus traditional heating in two different polymeric media i.e. gold nanospheres/poly (ethylene oxide) (AuNP:PEO) nanocomposite films and electrospun nanofibers. Subsequently, a brief study on the usage of gold nanorods (AuNR) to anneal polymeric nanofibers and films has also been presented. Effect of annealing by conventional and photothermal methods has been studied for AuNP:PEO films crystallized from solution and the melt, which have been annealed at average sample temperatures above the glass transition and below the melting point. For all temperatures, photothermally annealed samples reached maximum crystallinity and maximum spherulite size at shorter annealing times. Percentage crystallinity change under conventional annealing was analyzed using time-temperature superposition (TTS). Comparison of the TTS data with results from photothermal experiments enabled determination of an "effective dynamic temperature" achieved under photothermal heating which is significantly higher than the average sample temperature. Thus, the heterogeneous temperature distribution created when annealing with the plasmon-mediated photothermal effect represents a unique tool to achieve processing outcomes that are not accessible via traditional annealing. In addition, the effect of annealing AuNP:PEO electrospun nanofibrous composites via conventional and photothermal annealing has also been studied. From the studies, it was observed that not only is the maximum crystallinity achieved more quickly when the

  19. Facile Synthesis of Calcium Borate Nanoparticles and the Annealing Effect on Their Structure and Size

    PubMed Central

    Erfani, Maryam; Saion, Elias; Soltani, Nayereh; Hashim, Mansor; Wan Abdullah, Wan Saffiey B.; Navasery, Manizheh

    2012-01-01

    Calcium borate nanoparticles have been synthesized by a thermal treatment method via facile co-precipitation. Differences of annealing temperature and annealing time and their effects on crystal structure, particle size, size distribution and thermal stability of nanoparticles were investigated. The formation of calcium borate compound was characterized by X-ray diffraction (XRD) and Fourier Transform Infrared spectroscopy (FTIR), Transmission electron microscopy (TEM), and Thermogravimetry (TGA). The XRD patterns revealed that the co-precipitated samples annealed at 700 °C for 3 h annealing time formed an amorphous structure and the transformation into a crystalline structure only occurred after 5 h annealing time. It was found that the samples annealed at 900 °C are mostly metaborate (CaB2O4) nanoparticles and tetraborate (CaB4O7) nanoparticles only observed at 970 °C, which was confirmed by FTIR. The TEM images indicated that with increasing the annealing time and temperature, the average particle size increases. TGA analysis confirmed the thermal stability of the annealed samples at higher temperatures. PMID:23203073

  20. SEMICONDUCTOR DEVICES: Total ionizing dose effects and annealing behavior for domestic VDMOS devices

    NASA Astrophysics Data System (ADS)

    Bo, Gao; Xuefeng, Yu; Diyuan, Ren; Gang, Liu; Yiyuan, Wang; Jing, Sun; Jiangwei, Cui

    2010-04-01

    Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown voltage, leakage current, and on-state resistance upon total dose were discussed. We also observed the relationships between these parameters and annealing time. The experiment results show that: the threshold voltage negatively shifts with the increasing of total dose and continues to decrease at the beginning of 100 °C annealing; the breakdown voltage under the drain bias voltage has passed through the pre-irradiation threshold voltage during annealing behaving with a “rebound" effect; there is a latent interface-trap buildup (LITB) phenomenon in the VDMOS devices; the leakage current is suppressed; and on-state resistance is almost kept constant during irradiation and annealing. Our experiment results are meaningful and important for further improvements in the design and processing.

  1. Heavy Tails in the Distribution of Time to Solution for Classical and Quantum Annealing.

    PubMed

    Steiger, Damian S; Rønnow, Troels F; Troyer, Matthias

    2015-12-01

    For many optimization algorithms the time to solution depends not only on the problem size but also on the specific problem instance and may vary by many orders of magnitude. It is then necessary to investigate the full distribution and especially its tail. Here, we analyze the distributions of annealing times for simulated annealing and simulated quantum annealing (by path integral quantum Monte Carlo simulation) for random Ising spin glass instances. We find power-law distributions with very heavy tails, corresponding to extremely hard instances, but far broader distributions-and thus worse performance for hard instances-for simulated quantum annealing than for simulated annealing. Fast, nonadiabatic, annealing schedules can improve the performance of simulated quantum annealing for very hard instances by many orders of magnitude.

  2. Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

    SciTech Connect

    Zhao, Zhao; Vemuri, Rajitha N. P.; Alford, T. L.; David Theodore, N.; Lu, Wei; Lau, S. S.; Lanz, A.

    2013-12-28

    Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective dopant activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical activation process. Further comparison of dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P{sup +} implanted samples achieve no visible diffusion and equivalent electrical activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained during annealing does not depend on the dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.

  3. Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

    NASA Astrophysics Data System (ADS)

    Zhao, Zhao; David Theodore, N.; Vemuri, Rajitha N. P.; Lu, Wei; Lau, S. S.; Lanz, A.; Alford, T. L.

    2013-12-01

    Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective dopant activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical activation process. Further comparison of dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P+ implanted samples achieve no visible diffusion and equivalent electrical activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained during annealing does not depend on the dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.

  4. Annealing effects on microstrain of cobalt oxide nanoparticles

    SciTech Connect

    Deotale, Anjali Jain Nandedkar, R. V.; Sinha, A. K.; Singh, M. N.; Upadhyay, Anuj

    2014-04-24

    Cobalt oxide nanoparticles in different phases have been synthesized using ash supported method. The effect of isochronal annealing on micro-strain of cobalt oxide nanoparticles has been studied. The lattice strain contribution to the x-ray diffraction line broadening in the nanoparticles was analyzed using Williamson Hall (W-H) plot. It is observed that micro-strain was released at higher annealing temperature.

  5. Effect of Annealing on Thermal & Optical Properties of Polypyrrole

    NASA Astrophysics Data System (ADS)

    Saxena, Rashmi; Dixit, Manasvi; Sharma, Kananbala; Saxena, Narendra S.; Sharma, Thaneshwar P.

    2008-04-01

    Pure polypyrrole sample (S1) was synthesized by chemical oxidation method using NaOH as reducing agent in aqueous HCl medium. The polypyrrole pellet sample (S2) was then annealed at 200 °C for 4 hrs. The amorphous nature of both annealed and as- prepared polypyrrole samples was confirmed by XRD. FTIR spectra of both samples were taken, which indicate the significant change in annealed sample (S2) compared to as prepared sample. Temperature dependence of effective thermal conductivity of both samples (S1, S2) was studied by Transient plane source (TPS) technique. The effective thermal conductivity (λe) obtained for S1 & S2 exhibits a variation with temperature and a peak was observed for the two samples at 150 °C & 120 °C with a value 0.17 W/mK & 0.18 W/mK respectively. The shift of thermal conductivity peak of annealed sample towards the lower temperature side is explained on the basis of removal of voids and defects on annealing. The absorption spectra of these samples were recorded by USB-2000 spectrophotometer at room temperature in the wavelength range 300-800 nm. From the analysis of absorption spectra, optical band gap of S1 & S2 were determined. It was found that the values of optical band gap for sample S1 & S2 are 2.39 eV&2.24 eV respectively.

  6. The Effect of Solution Annealing on Alloy 22 Weld Properties

    SciTech Connect

    El-Dasher, B S; Torres, S G

    2005-11-08

    The effect of solution annealing temperature on the microstructure and observed corrosion attack mode in Alloy 22 welds was assessed. Specimens were examined in the as-welded state as well as solution annealed for 20 minutes at temperatures ranging from 1075 C to 1300 C. The microstructures of the specimens were first mapped using electron backscatter diffraction to determine the grain structure evolution due to solution annealing. Full recrystallization of the fusion zone was only observed in the 1200 C and 1300 C specimens, although the 1300 C specimen showed abnormal grain growth. As-welded, 1121 C and 1200 C specimens were also subjected to electrochemical testing in a 6 molal NaCl + 0.9 molal KNO{sub 3} environment to initiate crevice corrosion. Examination of the specimen surfaces after corrosion testing showed that in the as-welded specimen, corrosion was present in both the weld dendrites as well as around the secondary phases. However, the specimen solution annealed at 1121 C showed corrosion only at secondary phases and the specimen annealed at 1200 C showed pitting corrosion only in a handful of grains.

  7. Electrochemical capacitance of iron oxide nanotube (Fe-NT): effect of annealing atmospheres

    NASA Astrophysics Data System (ADS)

    Sarma, Biplab; Jurovitzki, Abraham L.; Ray, Rupashree S.; Smith, York R.; Mohanty, Swomitra K.; Misra, Mano

    2015-07-01

    The effect of annealing atmosphere on the supercapacitance behavior of iron oxide nanotube (Fe-NT) electrodes has been explored and reported here. Iron oxide nanotubes were synthesized on a pure iron substrate through an electrochemical anodization process in an ethylene glycol solution containing 3% H2O and 0.5 wt.% NH4F. Subsequently, the annealing of the nanotubes was carried out at 500 °C for 2 h in various gas atmospheres such as air, oxygen (O2), nitrogen (N2), and argon (Ar). The morphology and crystal phases evolved after the annealing processes were examined via field emission scanning electron microscopy, x-ray diffraction, Raman spectroscopy, and x-ray photoelectron spectroscopy. The electrochemical capacitance properties of the annealed Fe-NT electrodes were evaluated by conducting cyclic voltammetry (CV), galvanostatic charge-discharge, and electrochemical impedance spectroscopy tests in the Li2SO4 electrolyte. Based on these experiments, it was found that the capacitance of the Fe-NT electrodes annealed in air and O2 atmospheres shows mixed behavior comprising both the electric double layer and pseudocapacitance. However, annealing in N2 and Ar environments resulted in well-defined redox peaks in the CV profiles of the Fe-NT electrodes, which are therefore attributed to the relatively higher pseudonature of the capacitance in these electrodes. Based on the galvanostatic charge-discharge studies, the specific capacitance achieved in the Fe-NT electrode after annealing in Ar was about 300 mF cm-2, which was about twice the value obtained for N2-annealed Fe-NTs and three times higher than those annealed in air and O2. The experiments also demonstrated excellent cycle stability for the Fe-NT electrodes with 83%-85% capacitance retention, even after many charge-discharge cycles, irrespective of the gas atmospheres used during annealing. The increase in the specific capacitance was discussed in terms of increased oxygen vacancies as a result of the

  8. Effect of pre-annealing in thermal processing of Bi-2212 round wires

    NASA Astrophysics Data System (ADS)

    Baca, F. J.; Holesinger, T. G.; Coulter, J. Y.; Miao, H.; Huang, Y.; Parrell, J.; Campbell, S.; Searcy, J.; Sooby, E.; Kennison, J.; DePaula, R.; Apodaca, I.; Marken, K.

    2012-06-01

    Bi2Sr2CaCu2Ox (Bi-2212) superconducting wires are of interest for producing the next generation of high field (greater than 20 T) magnet windings. However, improvements in critical current must be achieved to make them fully viable for such applications. Fully optimizing the thermal reaction in the melt-processing is a means of maximizing the capabilities of wires presently available. Using methods of Statistically Designed Experiments, the process variables may be simultaneously optimized to maximize c, and in this work, we show the effects of including and varying the parameters of a pre-anneal in the thermal reaction cycle. We find that the critical current is less sensitive to changes in the pre-anneal temperature, and is more responsive to changes in the dwell time. We examine the microstructure for varied dwell times and show the fitted response surfaces for c as a function of the pre-anneal parameters.

  9. Forecasting nonlinear chaotic time series with function expression method based on an improved genetic-simulated annealing algorithm.

    PubMed

    Wang, Jun; Zhou, Bi-hua; Zhou, Shu-dao; Sheng, Zheng

    2015-01-01

    The paper proposes a novel function expression method to forecast chaotic time series, using an improved genetic-simulated annealing (IGSA) algorithm to establish the optimum function expression that describes the behavior of time series. In order to deal with the weakness associated with the genetic algorithm, the proposed algorithm incorporates the simulated annealing operation which has the strong local search ability into the genetic algorithm to enhance the performance of optimization; besides, the fitness function and genetic operators are also improved. Finally, the method is applied to the chaotic time series of Quadratic and Rossler maps for validation. The effect of noise in the chaotic time series is also studied numerically. The numerical results verify that the method can forecast chaotic time series with high precision and effectiveness, and the forecasting precision with certain noise is also satisfactory. It can be concluded that the IGSA algorithm is energy-efficient and superior.

  10. Interrogating the Effects of Radiation Damage Annealing on Helium Diffusion Kinetics in Apatite

    NASA Astrophysics Data System (ADS)

    Willett, C. D.; Fox, M.; Shuster, D. L.

    2015-12-01

    Apatite (U-Th)/He thermochronology is commonly used to study landscape evolution and potential links between climate, erosion and tectonics. The technique relies on a quantitative understanding of (i) helium diffusion kinetics in apatite, (ii) an evolving 4He concentration, (iii) accumulating damage to the crystal lattice caused by radioactive decay[1], and (iv) the thermal annealing of such damage[2],[3], which are each functions of both time and temperature. Uncertainty in existing models of helium diffusion kinetics has resulted in conflicting conclusions, especially in settings involving burial heating through geologic time. The effects of alpha recoil damage annealing are currently assumed to follow the kinetics of fission track annealing (e.g., reference [3]), although this assumption is difficult to fully validate. Here, we present results of modeling exercises and a suite of experiments designed to interrogate the effects of damage annealing on He diffusivity in apatite that are independent of empirical calibrations of fission track annealing. We use the existing experimental results for Durango apatite[2] to develop and calibrate a new function that predicts the effects of annealing temperature and duration on measured diffusivity. We also present a suite of experiments conducted on apatite from Sierra Nevada, CA granite to establish whether apatites with different chemical compositions have the same behavior as Durango apatite. Crystals were heated under vacuum to temperatures between 250 and 500°C for 1, 10, or 100 hours. The samples were then irradiated with ~220 MeV protons to produce spallogenic 3He, the diffusant then used in step-heating diffusion experiments. We compare the results of these experiments and model calibrations to existing models. Citations: [1]Shuster, D., Flowers R., and Farley K., (2006), EPSL 249(3-4), 148-161; [2]Shuster, D. and Farley, K., (2009), GCA 73 (1), 6183-6196; [3]Flowers, R., Ketcham, R., Shuster, D. and Farley, K

  11. The effect of excimer laser annealing on ZnO nanowires and their field effect transistors.

    PubMed

    Maeng, Jongsun; Heo, Sungho; Jo, Gunho; Choe, Minhyeok; Kim, Seonghyun; Hwang, Hyunsang; Lee, Takhee

    2009-03-01

    We have investigated the effect of excimer laser annealing on the chemical bonding, electrical, and optical properties of ZnO nanowires. We demonstrate that after laser annealing on the ZnO nanowire field effect transistors, the on-current increases and the threshold voltage shifts in the negative gate bias direction. These electrical results are attributed to the increase of oxygen vacancies as n-type dopants after laser annealing, consistent with the shifts towards higher binding energies of Zn 2p and O 1s in the x-ray photoelectron spectroscopy analysis of as-grown nanowires and laser-annealed ZnO nanowires.

  12. Quality improvement of CdMnTe:In single crystals by an effective post-growth annealing

    NASA Astrophysics Data System (ADS)

    Yu, Pengfei; Xu, Yadong; Luan, Lijun; Du, Yuanyuan; Zheng, Jiahong; Li, Hui; Jie, Wanqi

    2016-10-01

    In this paper, an effective annealing method in which CdMnTe:In (CMT:In) single crystals were coated with CMT powders of the same composition was used to improve the crystal quality of CMT:In crystals. The results indicated that the density of Te inclusions decreased as the annealing time increased. The resistivity and IR transmittance of annealed CMT:In crystals were enhanced obviously. The resistivity of 120 h annealed crystal increased even two orders of magnitude. The reduction of full-width at-half-maximum (FWHM) and the increase of the intensity of X-ray rocking curve indicated an improvement of the crystal quality. PL measurements also showed the crystal quality improved after annealing. No characteristic peak of 241Am γ-ray could be observed in the detector fabricated with as-grown crystal. Remarkably, for the detector fabricated with annealed crystals, the peak of 241Am γ-ray appeared. And the energy resolution and μτ value were improved as the annealing time increased. Specially, 120 h annealed CMT:In crystal with 10.11% energy resolution and 1.20×10-3 cm2/V μτ value has the best detector performance.

  13. Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander

    2010-01-01

    Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

  14. Structural relaxation dynamics and annealing effects of sodium silicate glass.

    PubMed

    Naji, Mohamed; Piazza, Francesco; Guimbretière, Guillaume; Canizarès, Aurélien; Vaills, Yann

    2013-05-01

    Here we report high-precision measurements of structural relaxation dynamics in the glass transition range at the intermediate and short length scale for a strong sodium silicate glass during long annealing times. We evidence for the first time the heterogeneous dynamics at the intermediate range order by probing the acoustic longitudinal frequency in the GHz region by Brillouin light scattering spectroscopy. Or, from in-situ Raman measurements, we show that relaxation is indeed homogeneous at the interatomic length scale. Our results show that the dynamics at the intermediate range order contains two distinct relaxation time scales, a fast and a slow component, differing by about a 10-fold factor below Tg and approaching to one another past the glass transition. The slow relaxation time agrees with the shear relaxation time, proving that Si-O bond breaking constitutes the primary control of structural relaxation at the intermediate range order.

  15. Annealing polymer nanofibrous nanocomposite mats via photothermal heating: effects on overall crystallinity, morphology, and mechanical properties

    NASA Astrophysics Data System (ADS)

    Gorga, Russell; Clarke, Laura; Bochinski, Jason; Viswanath, Vidya; Maity, Somsubhra

    2014-03-01

    Metal nanoparticles embedded within polymeric systems can be made to act as localized heat sources thereby aiding in-situ polymer processing. This is made possible by the surface plasmon resonance mediated photothermal effect of metal nanoparticles, wherein incident light absorbed by the nanoparticle generates a non-equilibrium electron distribution which subsequently transfers this energy into the surrounding medium, resulting in a temperature increase in the immediate region around the particle. Here we demonstrate this effect in polyethylene oxide-gold nanoparticle electrospun nanofibrous mats, which have been annealed at temperatures above the glass transition. A non-contact temperature measurement technique utilizing embedded fluorophores (perylene) has been used to monitor the average temperature within samples. The effect of annealing methods (conventional and photothermal) and annealing conditions (temperature and time) on the fiber morphology, overall crystallinity, and mechanical properties is discussed. In conclusion we demonstrate that the specificity of plasmonic heating coupled with the inside-outside approach of annealing presents a unique tool to improve crystallinity, and therefore mechanical properties, of the polymer mats while maintaining the unique nanofibrous morphologies. Supported by the National Science Foundation (CMMI-1069108).

  16. Annealing effects in solid-state track recorders

    SciTech Connect

    Gold, R.; Roberts, J.H.; Ruddy, F.H.

    1981-09-04

    Current analyses of the annealing process in Solid State Track Recorders (SSTR) reveal fundamental misconceptions. The use of the Arrhenius equation to describe the decrease in track density resulting from annealing is shown to be incorrect. To overcome these deficiencies, generalized reaction rate theory is used to describe the annealing process in SSTR. Results of annealing experiments are used to guide this theoretical formulation. Within this framework, the concept of energy per etchable defect for SSTR is introduced. A general correlation between sensitivity and annealing susceptibility in SSTR is deduced. In terms of this general theory, the apparent correlation between fission track size and fission track density observed under annealing is readily explained. Based on this theoretical treatment of annealing phenomena, qualitative explanations are advanced for current enigmas in SSTR cosmic ray work.

  17. Effect of thermal annealing on the optical properties of CdGeAs2 wafers

    NASA Astrophysics Data System (ADS)

    Huang, Wei; Zhao, Beijun; Zhu, Shifu; He, Zhiyu; Chen, Baojun; Li, Jiawei; Yu, You; Tang, Jingjing; Liu, Weijia

    2013-01-01

    A crack-free CdGeAs2 single crystal 15 mm in diameter and 50 mm in length was grown in a three-zone tubular furnace by the modified vertical Bridgman method. During the annealing processes, the effects of treatments with different atmosphere, different temperatures and time were investigated. The as-grown and annealed wafers were characterized using X-ray diffractometer (XRD), energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR) and IR microscope. Conclusively, the results confirm annealing could improve the optical qualities of as-grown CdGeAs2 crystal. The best result was obtained under cover-up with CdGeAs2 polycrystalline powder at 450 °C for 150 h and the IR transmittance of the wafer measured by FTIR was up to 48.65% nearby 5.5 μm and exceeded 50% in the range of 8-12 μm. Additionally, the monolithic homogeneity of the crystal has also been greatly improved after annealing under cover-up with polycrystalline powder.

  18. Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases

    SciTech Connect

    Balyuba, V. I.; Gritsyk, V. Yu.; Davydova, T. A.; Kalygina, V. M. Nazarov, S. S.; Panin, A. V.; Khludkova, L. S.

    2006-12-15

    We study the effect of thermal annealing in the range of 200-610 deg. C on the sensitivity and time dependences of the response of the Pd-SiO{sub 2}-n-Si diodes to hydrogen and ammonia. The postannealing surface of a Pd electrode was examined using atomic force microscopy. The high-frequency C-V characteristics were measured in air and gas mixtures H{sub 2}-air and NH{sub 3}-air. It is shown that, after annealing at 200 deg. C for 10 min, the response of diode capacitance to hydrogen is higher than that to ammonia. After annealing at 300 deg. C and higher, the sensitivity of MOS diodes to hydrogen nearly vanishes. The response to ammonia still remains high, although it gradually weakens as the annealing temperature is increased. A decrease in sensitivity of the Pd-SiO{sub 2}-n-Si diodes to ammonia with increasing temperature is attributed to worsening of the electrical characteristics of the Pd electrode.

  19. Effects of gamma-irradiation and air annealing on Yb-doped Y3Al5O12 single crystal.

    PubMed

    Zeng, Xionghui; Xu, Xiaodong; Wang, Xiaodan; Zhao, Zhiwei; Zhao, Guangjun; Xu, Jun

    2008-03-01

    The effects of gamma-irradiation on the air-annealed 10at.% Yb:Y(3)Al(5)O(12) (YAG) and air annealing on the gamma-irradiated 10at.% Yb:YAG have been studied by the difference absorption spectra before and after treatment. The gamma-irradiation and air annealing led to opposite changes of the absorption properties of the Yb:YAG crystal. After air annealing, the gamma-irradiation induced centers were totally removed and the concentration of Fe(3+) and Yb(3+) were lightly increased. For the first time, the gamma-irradiation induced valence changes between Yb(3+) and Yb(2+) ions in Yb:YAG crystals have been observed.

  20. Effect of annealing in hydrogen atmosphere on ZnO films for field emission display

    NASA Astrophysics Data System (ADS)

    Zulkifli, Zurita; Sharma, Subash; Shinde, Sachin; Kalita, Golap; Tanemura, M.

    2015-11-01

    Surface morphology, crystallinity, conductivity and optical transmittance of ZnO films can be modified by annealing process. Hydrogen is one of the popular annealing gases as well as nitrogen, argon, oxygen and air which are commonly used for thin film cleaning or the removal of native oxide. In general, annealing is done at high temperatures (> 600degC) to improve the film properties. From a view point of environment, however, lower annealing temperature is preferable. In this work, low annealing process was challenged to understand the effect of annealing temperature on properties of ZnO thin films and nanostructured film grown on glass substrates for transparent field emission device applications. The annealing temperature employed was 100, 200 and 450°C at 100 sccm hydrogen flow rate. ZnO thin films were deposited by RF magnetron sputtering. The ZnO thin films were characterized by X-ray diffraction analysis (XRD), Atomic Force Microscopy (AFM), UV-VIS and Raman spectroscopy. The sheet resistances reduced about 15 kohm/sq at low annealing temperature. By contrast, the optical transmittance did not show any significant changes after annealing. The FE current density increased after the ZnO nanostructures film was annealed in 100°C. The results obtained could motivate a surface treatment for flexible ZnO thin film since the substrate is always suffered by heat.

  1. Effect of annealing temperature on structure and electrical properties of topological insulator Bi2Te3

    NASA Astrophysics Data System (ADS)

    Urkude, R. R.; Palikundwar, U. A.

    2016-05-01

    Bi2Te3 samples were prepared by precipitation method. The samples were annealed in evacuated quartz tubes and were treated at different temperature for different duration of time. Effects of annealing temperature and time on the structure of Bi2Te3 were studied in detail. The Bi2Te3 samples annealed at temperature 300°C and 450°C for 48Hrs, 72Hrs and 96Hrs were selected for the present study. The structure of Bi2Te3 and related phases were investigated by the X-ray powder diffraction technique. Morphology and chemical compositions of the samples were investigated by scanning electron microscope and energy dispersive X-ray spectroscopy respectively. All the samples were indexed in rhombohedral crystal structure, with a space group R-3m. The structure consists of repeated quintuple layers of atoms, Te2-Bi-Te1-Bi-Te2 stacking along the z-axis of the unit cell. Electrical properties of the sample annealed at 300°C for 96Hrs was evaluated by measurements of the electrical resistivity and magnetoresistance. The magnetoresistance data at low temperature (1.5 to 50 K) were analyzed to investigate weak antilocalization (WAL) effect. MR data followed the Hikami-Larkin-Nagaoka (HLN) equation with a fit parameter α close to -1 as expected for topological surface states at 1.5 K, but for other temperatures the small oscillations were observed which may be due to the phenomena like Shubnikov-de Hass effect.

  2. Effect of annealing on the laser induced damage of polished and CO2 laser-processed fused silica surfaces

    NASA Astrophysics Data System (ADS)

    Doualle, T.; Gallais, L.; Cormont, P.; Donval, T.; Lamaignère, L.; Rullier, J. L.

    2016-06-01

    We investigate the effect of different heat treatments on the laser-induced damage probabilities of fused silica samples. Isothermal annealing in a furnace is applied, with different temperatures in the range 700-1100 °C and 12 h annealing time, to super-polished fused silica samples. The surface flatness and laser damage probabilities at 3 ns, 351 nm are measured before and after the different annealing procedures. We have found a significant improvement of the initial laser damage probabilities of the silica surface after annealing at 1050 °C for 12 h. A similar study has been conducted on CO2 laser-processed sites on the surface of the samples. Before and after annealing, we have studied the morphology of the sites, the evolution of residual stress, and the laser-induced damage threshold measured at 351 nm, 3 ns. In this case, we observe that the laser damage resistance of the laser created craters can reach the damage level of the bare fused silica surface after the annealing process, with a complete stress relieve. The obtained results are then compared to the case of local annealing process by CO2 laser irradiation during 1 s, and we found similar improvements in both cases. The different results obtained in the study are compared to numerical simulations made with a thermo-mechanical model based on finite-element method that allows the simulation of the isothermal or the local annealing process, the evolution of stress and fictive temperature. The simulation results were found to be very consistent with experimental observations for the stresses evolution after annealing and estimation of the heat affected area during laser-processing based on the density dependence with fictive temperature. Following this work, the temperature for local annealing should reach 1330-1470 °C for an optimized reduction of damage probability and be below the threshold for material removal, whereas furnace annealing should be kept below the annealing point to avoid sample

  3. Effects of prior deformation and annealing process on microstructure and annealing twin density in a nickel based alloy

    SciTech Connect

    Li, Zhigang; Zhang, Lanting; Sun, Nairong; Sun, Yanle; Shan, Aidang

    2014-09-15

    The nickel based alloys with different Σ3 boundary density were achieved by cold-rolling and subsequent annealing treatment. Electron backscattered diffraction analysis showed that the grain size distribution changed with the processing parameters, and the discontinuous Σ3 boundary became continuous with the increase of prior deformation level. Furthermore, the Σ3 boundary density was found to be manipulated by both grain size distribution and Σ3 boundary density per grain which showed an increasing trend with prior deformation level and annealing temperature. - Highlights: • The prior deformation amount influenced the morphology of Σ3 boundary. • The grain size was not the only factor influencing Σ3 boundary density. • The fact that grain size distribution had an important effect on Σ3 boundary density was confirmed. • The nature of grain size distribution on Σ3 boundary density was revealed. • There was a great deviation in Σ3 boundary density between experimental results and predictions.

  4. Effect of Solution Annealing Temperatures on the Crevice Corrosion Mode of Alloy 22

    SciTech Connect

    El-Dasher, B S; Etien, R; Torres, S G

    2005-10-31

    The effect of solution annealing temperature on the observed corrosion attack mode in Alloy 22 welds was assessed. Three types of specimens were examined, including the as-welded state, solution annealed for 20 minutes at 1121 C, and solution annealed for 20 minutes at 1200 C. The microstructures of the specimens were first mapped using electron backscatter diffraction to determine the grain structure evolution due to solution annealing. The specimens were then subjected to electrochemical testing in a 6 molal NaCl + 0.9 molal KNO{sub 3} environment to initiate crevice corrosion. Examination of the specimen surfaces after corrosion testing showed that in the as-welded specimen, corrosion was present in both the weld dendrites as well as around the secondary phases. However, the specimen solution annealed at 1121 C showed corrosion only at secondary phases and the specimen annealed at 1200 C showed pitting corrosion only in a handful of grains.

  5. Effects of annealing on texture evolution of cross shear rolled high-purity Al foils

    NASA Astrophysics Data System (ADS)

    Wang, L.; Liu, Y.; Song, X.; He, J.; Zuo, L.

    2015-04-01

    The effects of annealing on recrystallization texture of cross shear rolled high-purity Al foil were investigated by orientation distribution functions (ODFs) and electron backscattered diffraction (EBSD). The results show that the intermediate annealing is beneficial to the development of the cube texture. The cube texture can be promoted by annealing, and the critical annealing temperature is about 280 °C. The cubic orientation grains firstly nucleate, and then expand into other grains with a high growth speed, and large angle grain boundary ratio increases, finally can swallow up most of the original grains, which results in the cube texture

  6. Effects of annealing on enthalpy relaxation in lyophilized disaccharide formulations: mathematical modeling of DSC curves.

    PubMed

    Luthra, Suman A; Hodge, Ian M; Pikal, Michael J

    2008-08-01

    The overall objective of these studies was to investigate, by experimental studies and theoretical analysis, the optimum annealing conditions to obtain maximum structural relaxation in lyophilized glasses of pharmaceutical significance. The model formulations used in this work were aspartame: sucrose and aspartame: trehalose (1:10 w/w) freeze-dried glasses. In this article, structural relaxation in amorphous systems was described in terms of the change in the fictive temperature (T(f)) and was measured using the enthalpy relaxation endotherm in a differential scanning calorimeter (DSC). The theoretical analysis was performed using the Tool-Narayanaswamy-Moynihan (TNM) model. The effect of different annealing conditions (temperature and time) on fictive temperature obtained from the theoretical analysis was calculated and compared with the experimental results. The model reproduced the experimental data very well for samples that were quench cooled from the liquid. However, the model fits were poor for lyophilized samples, indicating an inability to incorporate the complex thermal history of freeze-drying in the TNM model. The optimum aging conditions were determined from both DSC and approximated best-fit parameters of the TNM model, and it was found that annealing when done at a temperature about 15-25 degrees C below T(g) resulted in maximum structural relaxation.

  7. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

    PubMed

    Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

    2014-10-21

    Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV <10 cm s(-1)). The deduced values are close to the best reported SRV obtained by the high thermal budget process (with annealing time between 10-30 min), conventionally used for improved surface passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

  8. Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

    SciTech Connect

    Yücel, E.; Kahraman, S.; Güder, H.S.

    2015-08-15

    Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

  9. Experimental signatures of quantum annealing

    NASA Astrophysics Data System (ADS)

    Boixo, Sergio

    2013-03-01

    Quantum annealing is a general strategy for solving optimization problems with the aid of quantum adiabatic evolution. How effective is rapid decoherence in precluding quantum effects in a quantum annealing experiment, and will engineered quantum annealing devices effectively perform classical thermalization when coupled to a decohering thermal environment? Using the D-Wave machine, we report experimental results for a simple problem which takes advantage of the fact that for quantum annealing the measurement statistics are determined by the energy spectrum along the quantum evolution, while in classical thermalization they are determined by the spectrum of the final Hamiltonian only. We establish an experimental signature which is consistent with quantum annealing, and at the same time inconsistent with classical thermalization, in spite of a decoherence timescale which is orders of magnitude shorter than the adiabatic evolution time. For larger and more difficult problems, we compare the measurements statistics of the D-Wave machine to large-scale numerical simulations of simulated annealing and simulated quantum annealing, implemented through classical and quantum Monte Carlo simulations. For our test cases the statistics of the machine are - within calibration uncertainties - indistinguishable from a simulated quantum annealer with suitably chosen parameters, but significantly different from a classical annealer. Work in collaboration with T. Albash, N. Chancellor, S. Isakov, D. Lidar, T. Roennow, F. Spedalieri, M. Troyer and Z. Wang.

  10. Effect of Annealing and Cold Work on Mechanical Properties of Beta III Titanium

    NASA Astrophysics Data System (ADS)

    Cai, S.; Bailey, D. M.; Kay, L. E.

    2012-12-01

    Experiments have been carried out to study the effect of annealing and cold work (CW) on the mechanical properties of beta III Ti alloy. Material was annealed at different temperatures above the beta transformation temperature, and then cold drawn to about 53% area reduction. Cyclic tensile test was performed to study the evolution of mechanical properties and the recoverable strain during process. Results show that the effect of annealing and CW is closely related to the stress-induced martensite (SIM) phase transformation. Lower annealing temperature results in higher strength and recoverable strain, which is further increased by CW. A total recoverable strain of ~3.2% was obtained from the annealed and CW sample.

  11. Simulated annealing versus quantum annealing

    NASA Astrophysics Data System (ADS)

    Troyer, Matthias

    Based on simulated classical annealing and simulated quantum annealing using quantum Monte Carlo (QMC) simulations I will explore the question where physical or simulated quantum annealers may outperform classical optimization algorithms. Although the stochastic dynamics of QMC simulations is not the same as the unitary dynamics of a quantum system, I will first show that for the problem of quantum tunneling between two local minima both QMC simulations and a physical system exhibit the same scaling of tunneling times with barrier height. The scaling in both cases is O (Δ2) , where Δ is the tunneling splitting. An important consequence is that QMC simulations can be used to predict the performance of a quantum annealer for tunneling through a barrier. Furthermore, by using open instead of periodic boundary conditions in imaginary time, equivalent to a projector QMC algorithm, one obtains a quadratic speedup for QMC, and achieve linear scaling in Δ. I will then address the apparent contradiction between experiments on a D-Wave 2 system that failed to see evidence of quantum speedup and previous QMC results that indicated an advantage of quantum annealing over classical annealing for spin glasses. We find that this contradiction is resolved by taking the continuous time limit in the QMC simulations which then agree with the experimentally observed behavior and show no speedup for 2D spin glasses. However, QMC simulations with large time steps gain further advantage: they ``cheat'' by ignoring what happens during a (large) time step, and can thus outperform both simulated quantum annealers and classical annealers. I will then address the question how to optimally run a simulated or physical quantum annealer. Investigating the behavior of the tails of the distribution of runtimes for very hard instances we find that adiabatically slow annealing is far from optimal. On the contrary, many repeated relatively fast annealing runs can be orders of magnitude faster for

  12. Rapid thermal annealing effects on tin oxide nanowires prepared by vapor-liquid-solid technique.

    PubMed

    Kar, Ayan; Yang, Jianyong; Dutta, Mitra; Stroscio, Michael A; Kumari, Jyoti; Meyyappan, M

    2009-02-11

    Tin oxide nanowires have been grown on p-type silicon substrates using a gold-catalyst-assisted vapor-liquid-solid growth process. The nanowires were annealed in the presence of oxygen at 700 degrees C for different time intervals. The changes in material properties of the nanowires after annealing were investigated using various characterization techniques. Annealing improves the crystal quality of the nanowires as seen from Raman spectroscopy analysis. Photoluminescence (PL) data indicates a decrease in the oxygen vacancies and defects after annealing, affecting the luminescence from the nanowires. In addition, x-ray photoelectron spectroscopy (XPS) was used to obtain the changes in the tin and oxygen atomic concentrations before and after annealing, from which the stoichiometry was calculated.

  13. The effects of annealing on mechanical, chemical, and physical properties and structural stability of Parylene C.

    PubMed

    von Metzen, Rene Patrick; Stieglitz, Thomas

    2013-10-01

    Parylene C is one of the established encapsulation polymers for chronic implants. We investigated the influence of annealing Parylene C on its mechanical properties, chemical structure, and on the stability of Parylene C - platinum - Parylene C sandwich structures as a model of flexible neural interfaces in 0.9 % saline solution. Films of Parylene C were annealed at 200 °C, 300 °C, 350 °C, and 400 °C in nitrogen atmosphere. Temperatures of 350 °C and higher as well as annealing in air destroyed the Parylene C layers; films annealed at lower temperatures showed identical infrared spectra. Higher anneal temperatures produced increased values of elongation at break, tensile and yield strength, and yield strain while at the same time Young's modulus was shown to decrease. Crystallinity increased with annealing temperature. The structural stability of sandwich structures benefitted remarkably from annealing. Sandwich structures annealed at 300 °C maintained their structural integrity during 320 days in saline solution at 37 °C and the insulation capability stayed consistently high. PMID:23494595

  14. Nucleation phenomena in an annealed damage model: statistics of times to failure.

    PubMed

    Abaimov, S G; Cusumano, J P

    2014-12-01

    In this paper we investigate the statistical behavior of an annealed continuous damage model. For different model variations we study distributions of times to failure and compare these results with the classical case of metastable nucleation in statistical physics. We show that our model has a tuning parameter, related to the degree of damage reversibility, that determines the model's behavior. Depending on the value of this parameter, our model exhibits statistical behavior either similar to classical reversible nucleation phenomena in statistical physics or to an absolutely different type of behavior intrinsic to systems with damage. This comparison allows us to investigate possible similarities and differences between damage phenomena and reversible nucleation.

  15. The effects of annealing a 2-dimensional array of ion-irradiated Josephson junctions

    NASA Astrophysics Data System (ADS)

    Cho, E. Y.; Kouperine, K.; Zhuo, Y.; Dynes, R. C.; Cybart, S. A.

    2016-09-01

    We have fabricated the two-dimensional arrays of superconducting quantum interference devices (SQUIDs) using YBa2Cu3O7-δ ion-irradiated Josephson junctions, and we have studied the effects of post-annealing the arrays at 100 ◦C in oxygen. The maximum voltage modulation, V B, in a magnetic field for DC biased arrays at 50 K is initially 1.2 mV, but increases to 3 mV after annealing. Furthermore, the temperature where the largest V B occurs increases from 45 K to 48.5 K after annealing. We present and simulate a model where annealing causes diffusion and recombination of the low-energy oxygen defects that narrows the barrier, resulting in an increase in the Josephson binding energy. We show that this process stabilizes after 40 minutes of annealing and leads to a significant improvement in the properties of the array.

  16. Effect of Annealing Temperature on Bi3.25La0.75Ti3O12 Powders for Humidity Sensing Properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; He, Jinping; Yuan, Mengjiao; Jiang, Bin; Li, Peiwen; Tong, Yexing; Zheng, Xuejun

    2016-08-01

    Bi3.25La0.75Ti3O12 (BLT) powders have been synthesized via the metal-organic decomposition method with annealing of the BLT precursor solution at 350°C, 450°C, 550°C, 650°C or 750°C. The crystalline structure and morphology of the BLT powders were characterized by x-ray diffraction analysis, field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, and specific surface and pore size analyses. The humidity sensing properties of the BLT powders annealed at the five temperatures were investigated to determine the effect of annealing temperature. The annealing temperature strongly influenced the grain size, pore size distribution, and specific surface area of the BLT powders, being largely correlated to their humidity sensing properties. The specific surface area of the BLT powder annealed at 550°C was 68.2 m2/g, much larger than for the other annealing temperatures, and the majority of the pores in the BLT powder annealed at 550°C were mesoporous, significantly increasing the adsorption efficiency of water vapor onto the surface of the material. The impedance of the BLT powder annealed at 550°C varied by more than five orders of magnitude over the whole humidity range at working frequency of 100 Hz, being approximately five times greater than for BLT powders annealed at other temperatures. The response time was about 8 s, with maximum hysteresis of around 3% relative humidity. The BLT powder annealed at 550°C exhibited the best humidity sensing properties compared with the other annealing temperatures. We expect that these results will offer useful guidelines for preparation of humidity sensing materials.

  17. Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

    NASA Astrophysics Data System (ADS)

    Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

    2016-12-01

    We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode.

  18. Effect of Annealing on the Optical Properties of Transition Metal Doped ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Mathew, Jijoy P.; Varghese, George; Mathew, Jacob

    2015-02-01

    A group of transition metal (Co,Cu,Ni) doped ZnO thin films were prepared by a low cost dip coating method. To study the effect of annealing temperature on the structural and optical properties of the grown films each film is subjected to three different annealing temperatures. From the calculation of structural parameters from the XRD spectrum, it was found that each film possesses a tensile strain and this tensile strain increases as the annealing temperature increases. This dominant behavior of tensile strain affects the optical properties of the grown film in a greater extent.

  19. Metallic nanowire networks: effects of thermal annealing on electrical resistance.

    PubMed

    Langley, D P; Lagrange, M; Giusti, G; Jiménez, C; Bréchet, Y; Nguyen, N D; Bellet, D

    2014-11-21

    Metallic nanowire networks have huge potential in devices requiring transparent electrodes. This article describes how the electrical resistance of metal nanowire networks evolve under thermal annealing. Understanding the behavior of such films is crucial for the optimization of transparent electrodes which find many applications. An in-depth investigation of silver nanowire networks under different annealing conditions provides a case study demonstrating that several mechanisms, namely local sintering and desorption of organic residues, are responsible for the reduction of the systems electrical resistance. Optimization of the annealing led to specimens with transmittance of 90% (at 550 nm) and sheet resistance of 9.5 Ω sq(-1). Quantized steps in resistance were observed and a model is proposed which provides good agreement with the experimental results. In terms of thermal behavior, we demonstrate that there is a maximum thermal budget that these electrodes can tolerate due to spheroidization of the nanowires. This budget is determined by two main factors: the thermal loading and the wire diameter. This result enables the fabrication and optimization of transparent metal nanowire electrodes for solar cells, organic electronics and flexible displays.

  20. Metallic nanowire networks: effects of thermal annealing on electrical resistance.

    PubMed

    Langley, D P; Lagrange, M; Giusti, G; Jiménez, C; Bréchet, Y; Nguyen, N D; Bellet, D

    2014-11-21

    Metallic nanowire networks have huge potential in devices requiring transparent electrodes. This article describes how the electrical resistance of metal nanowire networks evolve under thermal annealing. Understanding the behavior of such films is crucial for the optimization of transparent electrodes which find many applications. An in-depth investigation of silver nanowire networks under different annealing conditions provides a case study demonstrating that several mechanisms, namely local sintering and desorption of organic residues, are responsible for the reduction of the systems electrical resistance. Optimization of the annealing led to specimens with transmittance of 90% (at 550 nm) and sheet resistance of 9.5 Ω sq(-1). Quantized steps in resistance were observed and a model is proposed which provides good agreement with the experimental results. In terms of thermal behavior, we demonstrate that there is a maximum thermal budget that these electrodes can tolerate due to spheroidization of the nanowires. This budget is determined by two main factors: the thermal loading and the wire diameter. This result enables the fabrication and optimization of transparent metal nanowire electrodes for solar cells, organic electronics and flexible displays. PMID:25267592

  1. Effects of getter annealing and codoping of iron and zinc in yttrium-barium cuprates

    SciTech Connect

    O'Brien, J.R.; Oesterreicher, H. ); Taylor, R.D. . Physics Division)

    1994-09-01

    This study explores issues connected with the complex structural and electronic behavior of partly substituted YBa[sub 2](Cu[sup 1[minus]x[minus]z]Fe[sub x]Zn[sub z])[sub 3]O[sub y] when given special redox sequencing over varying times. For z = 0 and x = 0.03 conventional oxygenated slow cooling preparations (OP) yield tetragonal materials with [Tc][sub mid] = 59K. Getter annealing procedures using Gd to control the extent of reduction to y = 6.1 at 1000K for 4 days followed by reoxidation at 700K for 1 hour yield orthorhombic materials with [Tc][sub mid] = 68K and improved superconducting volume fractions. The results are in line with expectations for the presence of ordered atomic size Fe clusters with these reducing preparations (RP). This redox sequence also reduces the paramagnetic Curie temperature from [Theta][sub P] = [minus]35K to [Theta][sub P] = [minus]51K for z = 0, hinting at higher cluster Neel temperatures. When the getter annealed specimen is air annealed for prolonged times (50h) at 673K, a broader [Tc] transition develops and a slight decrease in the orthorhombic splitting is observed. This demonstrates that small rearrangements from properties of RP to OP are possible even at these low temperatures. Codoping to x = 0.03, z = 0.01 results in drastic reductions to [Tc][sub mid] = 31K for OP, beyond the one expected from individual contributions, while structural parameters do not change noticeably. This synergistic effects is also reflected in [Theta][sub P] and may have to do with a large proportion of Fe occupying the Cu(2) site. Results are discussed within models of inhomogeneous M distributions and oxygen chain order.

  2. Effect of Interim Annealing on Mechanical Strength of TFA-MOD Derived YBCO Coated Conductors

    NASA Astrophysics Data System (ADS)

    Takagi, Y.; Nakaoka, K.; Nakamura, T.; Yoshizumi, M.; Kiss, T.; Izumi, T.; Shiohara, Y.

    TFA-MOD derived YBCO tapes are expected for many applications due to cost-efficiency. In some applications, uniformity and mechanical strength are required for tapes. A 205 m-long YBCO tape was fabricated with high and uniform Ic performance throughout the tape by adopting the interim annealing before the conversion process. The effect of the interim annealing on the crystal growth mechanism of YBCO has been studied focusing on the relationship between the interim annealing conditions and delamination, in this work. Delamination strength was evaluated in the samples prepared with and without interim annealing by the stud pull method. Measurements were carried out on 50 different points for each sample and the results were analyzed statistically. The difference between the two samples was remarkably seen in the delamination strength below 60 MPa. The conventionally annealed sample had more points with low delamination strength below 60 MPa than the interim annealed one. The cross sectional images of both samples observed by SEM showed that there were few pores within the interim annealed superconducting layer, although conventional superconducting layer had many pores. These results suggest that the pores within YBCO layer might be origins to be propagated for delamination at low strength.

  3. Annealing Effects on Creep and Rupture of Polycrystalline Alumina-Based Fibers

    NASA Technical Reports Server (NTRS)

    Goldsby, J. C.; Yun, H. M.; Morscher, G. N.; DiCarlo, J. A.

    1998-01-01

    Continuous-length polycrystalline aluminum-oxide-based fibers are being considered as reinforcements for advanced high-temperature composite materials. For these fine-grained fibers, basic issues arise concerning grain growth and microstructural instability during composite fabrication and the resulting effects on the fiber's thermo-mechanical properties. To examine these issues, commercially available Nextel 610 (alumina) and Altex (alumina-silica) fibers were annealed at 1100 and 1300 C for up to 100 hr in air. Changes in fiber microstructure, fiber tensile creep, stress rupture, and bend stress relaxation (BSR) that occurred with annealing were then determined. BSR tests were also used to compare as-received and annealed fibers to other polycrystalline oxide fibers. Annealing was shown to have a significant effect, particularly on the Altex fiber, and caused it to have increased creep resistance.

  4. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    NASA Astrophysics Data System (ADS)

    Ulutas, Cemal; Gumus, Cebrail

    2016-03-01

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (Eg) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn3O4 phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  5. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

    NASA Technical Reports Server (NTRS)

    Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

    1973-01-01

    Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

  6. Effect of annealing and pressure on microstructure of cornstarches with different amylose/amylopectin ratios.

    PubMed

    Liu, Hongsheng; Yu, Long; Simon, George; Zhang, Xiaoqing; Dean, Katherine; Chen, Ling

    2009-02-17

    This work focuses on the effect of annealing and pressure on microstructures of starch, in particular the crystal structure and crystallinity to further explore the mechanisms of annealing and pressure treatment. Cornstarches with different amylose/amylopectin ratios were used as model materials. Since the samples covered both A-type (high amylopectin starch: waxy and maize) and B-type (high amylose starch: G50 and G80) crystals, the results can be used to clarify some previous confusion. The effect of annealing and pressure on the crystallinity and double helices were investigated by X-ray diffraction (XRD) and (13)C CP/MAS NMR spectroscopy. The crystal form of various starches remained unchanged after annealing and pressure treatment. XRD detection showed that the relative crystallinity (RC) of high amylopectin starches was increased slightly after annealing, while the RC of high amylose-rich starches remained unchanged. NMR measurement supported the XRD results. The increase can be explained by the chain relaxation. XRD results also indicated that some of the fixed region in crystallinity was susceptible to outside forces. The effect of annealing and pressure on starch gelatinization temperature and enthalpy are used to explore the mechanisms.

  7. Effect of annealing temperature on PL spectrum and surface morphology of zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Zendehnam, A.; Mirzaee, M.; Miri, S.

    2013-04-01

    Zinc oxide (ZnO) thin films were produced by thermal oxidation of Zn layers (200 nm thickness) which were coated on Si (1 0 0) substrate by DC magnetron sputtering. In order to study the effect of annealing temperature on photoluminescence (PL) properties and the surface morphology of the ZnO samples, the annealing temperature range of 500-700 °C was employed. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) for investigation of surface morphology of the ZnO samples were carried out. The surface statistical characteristics of these ZnO thin films are then evaluated against data which outcome from AFM. SEM and AFM results indicated that the annealing temperature produces larger grains and rough surfaces at higher temperatures. The results of PL spectra represent an increase in interstitial zinc with increasing annealing temperature.

  8. Irradiation and annealing effects on delamination toughness in carbon/epoxy composite

    NASA Astrophysics Data System (ADS)

    Sekulic, D. R.; Gordic, M. V.; Djordjevic, I. M.; Petrovic, Z. S.; Stevanovic, M. M.

    2009-01-01

    Gamma irradiation to various doses (4.8-27.2 MGy) was performed on unidirectional carbon fiber/epoxy resin composite plates. Unidirectional composite coupons irradiated to various doses were annealed at 180 and 250 °C, in vacuum. The strain energy release rate GIC, as a measure of delamination fracture toughness, was determined by Mode I fracture testing on double cantilever beam coupons. The glass transition temperature ( Tg) of the tested coupons matrices was determined in DMA tests. The effects of irradiation and annealing on GIC values - the mean values of 10 propagation points ( GIC,mean) and that of fracture initiation ( GIC,init) - were established. These values were analyzed as a function of irradiation dose and annealing temperatures, having in mind glass transition temperature values changes, as well as the possible mechanisms and phenomena of irradiation and annealing.

  9. The Effect of Grain Size and Dislocation Density on the Tensile Properties of Ni-SiCNP Composites During Annealing

    NASA Astrophysics Data System (ADS)

    Yang, Chao; Huang, Hefei; Thorogood, Gordon James; Jiang, Li; Ye, Xiangxi; Li, Zhijun; Zhou, Xingtai

    2016-03-01

    The grain size refinement, enhancement of mechanical properties, and static recrystallization behavior of metallic nickel-silicon carbide nano-particle (Ni-3wt.%SiCNP) composites, milled for times ranging from 8 to 48 h have been examined. One set of Ni-SiCNP composite samples were annealed at 300 °C for 250 h, while the other set of samples were maintained at room temperature for control purposes (reference). The electron backscatter diffraction results indicate that the grain size of the annealed Ni-SiCNP composite was refined due to grain restructuring during static recrystallization. The x-ray diffraction results indicate that low-temperature annealing effectively reduced the density of dislocations; this can be explained by the dislocation pile-up model. Additionally, the tensile tests indicated that the annealed Ni-SiCNP composite had a significant increase in strength due to an increase of the Hall-Petch strengthening effect with a slight increase in the total elongation. The decrease of dislocation pile-up in the grain interiors and the increase in grain boundary sliding are assumed to be the main mechanisms at play. The relationship between the microstructural evolution and the variation of tensile properties is examined in this study.

  10. Low temperature magnetothermoelectric effect and magnetoresistance in Te vapor annealed Bi2Te3.

    PubMed

    Hor, Y S; Qu, D; Ong, N P; Cava, R J

    2010-09-22

    The electrical properties of single crystals of p-type Bi(2)Te(3) are shown to be tuned by annealing as-grown crystals in elemental Te vapor at temperatures in the range of 400-420 °C. While as-grown nominally stoichiometric Bi(2)Te(3) has p-type conductivity below room temperature, Te vapor annealed Bi(2)Te(3) shows a cross over from p- to n-type behavior. The temperature dependent resistivity of the Te annealed crystals shows a characteristic broad peak near 100 K. Applied magnetic fields give rise to a large low temperature magnetothermoelectric effect in the Te annealed samples and enhance the low temperature peak in the resistivity. Further, Te annealed Bi(2)Te(3) shows a large positive magnetoresistance, ∼ 200% at 2 K, and ∼ 15% at room temperature. The annealing procedure described can be employed to optimize the properties of Bi(2)Te(3) for study as a topological insulator.

  11. Annealing effects on superconductivity and magnetism in Fe1+yTe1-xSx single crystals

    NASA Astrophysics Data System (ADS)

    Zhang, Z. T.; Yang, Z. R.; Li, L.; Pi, L.; Tan, S.; Zhang, Y. H.

    2012-04-01

    The annealing effects on superconductivity and magnetism in Fe1 + yTe1-xSx single crystals have been investigated. It is found that the superconductivity is improved not only by annealing in air but also by annealing in vacuum or argon. In addition, even for a low S content sample with long-range magnetic order, the superconductivity is also obviously improved by air annealing. These are inconsistent with the previous results of other groups. In the air annealing case, energy dispersive x-ray spectrometer analyses and heat capacity results show that oxygen is incorporated into the system and the long-range magnetic order is partially suppressed. In contrast, for vacuum or argon annealing, no change of composition is detected and no other ions are incorporated, and the enhancement of superconductivity clearly indicates that the modulation of the microstructure plays an important role in the annealing effect on superconductivity and magnetism.

  12. Effect of Heating Rate on the Austenite Formation in Low-Carbon High-Strength Steels Annealed in the Intercritical Region

    NASA Astrophysics Data System (ADS)

    Mohanty, R. R.; Girina, O. A.; Fonstein, N. M.

    2011-12-01

    Austenite formation during intercritical annealing was studied in a cold-rolled dual-phase (DP) steel based on a low-carbon DP780 composition processed in the mill. Two heating rates, 10 and 50 K/s, and a range of annealing temperatures from 1053 K to 1133 K (780 °C to 860 °C) were applied to study their effects on the progress of austenitization. The effect of these process parameters on the final microstructures and mechanical properties was also investigated using a fixed cooling rate of 10 K/s after corresponding annealing treatments. It was found that the heating rate affects the austenite formation not only during continuous heating, but also during isothermal holding, and the effect is more pronounced at lower annealing temperatures. Faster heating delays the recrystallization kinetics of the investigated steel. The rate of austenite formation and its distribution are strongly influenced by the extent of overlapping of the processes of recrystallization and austenitization. It appeared that the heating rate and temperature of intercritical annealing have a stronger effect on the final tensile strength (TS) of the DP steel than holding time. Both higher annealing temperatures and long holding times minimize the strength difference caused by a difference in heating rate.

  13. Annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films

    SciTech Connect

    Alves, M. J. P.; Gonzalez-Chavez, D. E.; Sommer, R. L.; Bohn, F.

    2015-03-28

    We systematically investigate the annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films with thickness of 100 nm. We correlate the non-uniform residual stress obtained from grazing incidence x-ray diffraction measurements with the ferromagnetic resonance (FMR) linewidth due to effective field inhomogeneities measured from broadband ferromagnetic resonance absorption measurements. We also estimate the annealing temperature effect on the Gilbert and two-magnon scattering contributions to the total ferromagnetic resonance FMR linewidth. We show that the effective field inhomogeneities constitute the main contribution to the microwave linewidth, while this contribution is related to the non-uniform residual stress in the films which is reduced by thermal annealing.

  14. Combined current-modulation annealing induced enhancement of giant magnetoimpedance effect of Co-rich amorphous microwires

    NASA Astrophysics Data System (ADS)

    Liu, Jingshun; Qin, Faxiang; Chen, Dongming; Shen, Hongxian; Wang, Huan; Xing, Dawei; Phan, Manh-Huong; Sun, Jianfei

    2014-05-01

    We report on a combined current-modulation annealing (CCMA) method, which integrates the optimized pulsed current (PC) and DC annealing techniques, for improving the giant magnetoimpedance (GMI) effect and its field sensitivity of Co-rich amorphous microwires. Relative to an as-prepared Co68.2Fe4.3B15Si12.5 wire, CCMA is shown to remarkably improve the GMI response of the wire. At 10 MHz, the maximum GMI ratio and its field sensitivity of the as-prepared wire were, respectively, increased by 3.5 and 2.28 times when subjected to CCMA. CCMA increased atomic order orientation and circumferential permeability of the wire by the co-action of high-density pulsed magnetic field energy and thermal activation energy at a PC annealing stage, as well as the formation of uniform circular magnetic domains by a stable DC magnetic field at a DC annealing stage. The magnetic moment can overcome eddy-current damping or nail-sticked action in rotational magnetization, giving rise to a double-peak feature and wider working field range (up to ±2 Oe) at relatively higher frequency (f ≥ 1 MHz).

  15. Combined current-modulation annealing induced enhancement of giant magnetoimpedance effect of Co-rich amorphous microwires

    SciTech Connect

    Liu, Jingshun E-mail: faxiang.qin@gmail.com; Qin, Faxiang E-mail: faxiang.qin@gmail.com; Chen, Dongming; Shen, Hongxian; Wang, Huan; Xing, Dawei; Sun, Jianfei; Phan, Manh-Huong

    2014-05-07

    We report on a combined current-modulation annealing (CCMA) method, which integrates the optimized pulsed current (PC) and DC annealing techniques, for improving the giant magnetoimpedance (GMI) effect and its field sensitivity of Co-rich amorphous microwires. Relative to an as-prepared Co{sub 68.2}Fe{sub 4.3}B{sub 15}Si{sub 12.5} wire, CCMA is shown to remarkably improve the GMI response of the wire. At 10 MHz, the maximum GMI ratio and its field sensitivity of the as-prepared wire were, respectively, increased by 3.5 and 2.28 times when subjected to CCMA. CCMA increased atomic order orientation and circumferential permeability of the wire by the co-action of high-density pulsed magnetic field energy and thermal activation energy at a PC annealing stage, as well as the formation of uniform circular magnetic domains by a stable DC magnetic field at a DC annealing stage. The magnetic moment can overcome eddy-current damping or nail-sticked action in rotational magnetization, giving rise to a double-peak feature and wider working field range (up to ±2 Oe) at relatively higher frequency (f ≥ 1 MHz)

  16. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

    NASA Astrophysics Data System (ADS)

    Wang, Yan-Rong; Yang, Hong; Xu, Hao; Wang, Xiao-Lei; Luo, Wei-Chun; Qi, Lu-Wei; Zhang, Shu-Xiang; Wang, Wen-Wu; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2015-11-01

    A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D&A) cycles, the D&A time, and the total annealing time. The results show that the increases of the number of D&A cycles (from 1 to 2) and D&A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D&A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D&A times and numbers of D&A cycles induce different breakdown mechanisms. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).

  17. Temperature effects on failure and annealing behavior in dynamic random access memories

    NASA Astrophysics Data System (ADS)

    Wilkin, N. D.; Self, C. T.

    1982-12-01

    Total dose failure levels and long time anneal characteristics of dynamic random access memories are measured while the devices are exercised under actual use conditions. These measurements were performed over the temperature range of -60 C to +70 C. The total dose failure levels are shown to decrease with increasing temperature. The anneal characteristics are shown to result in both an increase and decrease in the measured number of errors as a function of time. Finally a description of the test instrumentation and irradiation procedures are given.

  18. Effect of annealing process on the phase formation in poly(vinylidene fluoride) thin films

    SciTech Connect

    Abdullah, Ibtisam Yahya; Yahaya, Muhammad; Jumali, Mohd Hafizuddin Haji; Shanshool, Haider Mohammed

    2014-09-03

    This work reports the initial study on the effect of annealing process on the crystalline phase of poly(vinylidene fluoride) (PVDF) thin film. PVDF powder was dissolved in N,N-dimethylformamide before spin-coated onto a glass substrate to form a film. The films were annealed at 30°C, 90°C and 110°C for 5 hrs. The crystalline phase of the powder PVDF as received was investigated by using XRD and FTIR techniques. Moreover, the crystalline phases of thin films after annealing were investigated by using the same techniques. XRD analysis showed that in powder form PVDF exists in α-phase. Each annealed PVDF thin films exhibited identical formation of three-phases material namely γ (as major phase) while α and β phases as the minor phases. The FTIR analysis showed that the powder form of PVDF exists in α and β phases. FTIR measurement further confirmed the XRD results implying that the annealing process has no significant effect on the phase formation in PVDF films.

  19. Annealing Effects on Structure and Optical Properties of Diamond-Like Carbon Films Containing Silver.

    PubMed

    Meškinis, Šarūnas; Čiegis, Arvydas; Vasiliauskas, Andrius; Šlapikas, Kęstutis; Gudaitis, Rimantas; Yaremchuk, Iryna; Fitio, Volodymyr; Bobitski, Yaroslav; Tamulevičius, Sigitas

    2016-12-01

    In the present study, diamond-like carbon films with embedded Ag nanoparticles (DLC:Ag) were deposited by reactive magnetron sputtering. Structure of the films was investigated by Raman scattering spectroscopy. Atomic force microscopy was used to define thickness of DLC:Ag films as well as to study the surface morphology and size distribution of Ag nanoparticles. Optical absorbance and reflectance spectra of the films were studied in the 180-1100-nm range. Air annealing effects on structure and optical properties of the DLC:Ag were investigated. Annealing temperatures were varied in the 180-400 °C range. Changes of size and shape of the Ag nanoclusters took place due to agglomeration. It was found that air annealing of DLC:Ag films can result in graphitization following destruction of the DLC matrix. Additional activation of surface-enhanced Raman scattering (SERS) effect in DLC:Ag films can be achieved by properly selecting annealing conditions. Annealing resulted in blueshift as well as significant narrowing of the plasmonic absorbance and reflectance peaks. Moreover, quadrupole surface plasmon resonance peaks appeared. Modeling of absorption spectra of the nanoclusters depending on the shape and surrounding media has been carried out. PMID:26979724

  20. Effects of annealing on antiwear and antibacteria behaviors of TaN-Cu nanocomposite thin films

    SciTech Connect

    Hsieh, J. H.; Cheng, M. K.; Chang, Y. K.; Li, C.; Chang, C. L.; Liu, P. C.

    2008-07-15

    TaN-Cu nanocomposite films were deposited by reactive cosputtering on Si and tool steel substrates. The films were then annealed using rapid thermal annealing (RTA) at 400 deg. C for 2, 4, and 8 min, respectively, to induce the nucleation and growth of Cu particles in TaN matrix and on film surface. Field emission scanning electron microscopy was applied to characterize Cu nanoparticles emerged on the surface of TaN-Cu thin films. The effects of annealing on the antiwear and antibacterial properties of these films were studied. The results reveal that annealing by RTA can cause Cu nanoparticles to form on the TaN surface. Consequently, the tribological behaviors, as well as the antibacterial behavior may vary depending on particle size, particle distribution, and total exposed Cu amount. For the samples with large Cu particles, the reduction of averaged friction and wear rate is obvious. Apparently, it is due to the smeared Cu particles adhered onto the wear tracks. This Cu layer may act as a solid lubricant. From the antibacterial testing results, it is found that both Cu particle size and total exposed Cu amount are critical in making short-term antibacterial effect. Overall, all the annealed TaN-Cu samples can reach >99% antibacterial efficiency in 24 h, with respect to uncoated Si substrate.

  1. Annealing Effects on Structure and Optical Properties of Diamond-Like Carbon Films Containing Silver

    NASA Astrophysics Data System (ADS)

    Meškinis, Šarūnas; Čiegis, Arvydas; Vasiliauskas, Andrius; Šlapikas, Kęstutis; Gudaitis, Rimantas; Yaremchuk, Iryna; Fitio, Volodymyr; Bobitski, Yaroslav; Tamulevičius, Sigitas

    2016-03-01

    In the present study, diamond-like carbon films with embedded Ag nanoparticles (DLC:Ag) were deposited by reactive magnetron sputtering. Structure of the films was investigated by Raman scattering spectroscopy. Atomic force microscopy was used to define thickness of DLC:Ag films as well as to study the surface morphology and size distribution of Ag nanoparticles. Optical absorbance and reflectance spectra of the films were studied in the 180-1100-nm range. Air annealing effects on structure and optical properties of the DLC:Ag were investigated. Annealing temperatures were varied in the 180-400 °C range. Changes of size and shape of the Ag nanoclusters took place due to agglomeration. It was found that air annealing of DLC:Ag films can result in graphitization following destruction of the DLC matrix. Additional activation of surface-enhanced Raman scattering (SERS) effect in DLC:Ag films can be achieved by properly selecting annealing conditions. Annealing resulted in blueshift as well as significant narrowing of the plasmonic absorbance and reflectance peaks. Moreover, quadrupole surface plasmon resonance peaks appeared. Modeling of absorption spectra of the nanoclusters depending on the shape and surrounding media has been carried out.

  2. Effect of annealing process on the phase formation in poly(vinylidene fluoride) thin films

    NASA Astrophysics Data System (ADS)

    Abdullah, Ibtisam Yahya; Yahaya, Muhammad; Jumali, Mohd Hafizuddin Haji; Shanshool, Haider Mohammed

    2014-09-01

    This work reports the initial study on the effect of annealing process on the crystalline phase of poly(vinylidene fluoride) (PVDF) thin film. PVDF powder was dissolved in N,N-dimethylformamide before spin-coated onto a glass substrate to form a film. The films were annealed at 30°C, 90°C and 110°C for 5 hrs. The crystalline phase of the powder PVDF as received was investigated by using XRD and FTIR techniques. Moreover, the crystalline phases of thin films after annealing were investigated by using the same techniques. XRD analysis showed that in powder form PVDF exists in α-phase. Each annealed PVDF thin films exhibited identical formation of three-phases material namely γ (as major phase) while α and β phases as the minor phases. The FTIR analysis showed that the powder form of PVDF exists in α and β phases. FTIR measurement further confirmed the XRD results implying that the annealing process has no significant effect on the phase formation in PVDF films.

  3. Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients

    NASA Astrophysics Data System (ADS)

    Ariff, A.; Zainal, N.; Hassan, Z.

    2016-09-01

    This paper describes effects of using post-annealing treatment in different conditions on the properties of polycrystalline GaN layer grown on m-plane sapphire substrate by electron beam (e-beam) evaporator. Without annealing, GaN surface was found to have a low RMS roughness with agglomeration of GaN grains in a specific direction and the sample consisted of gallium oxide (Ga2O3) material. When the post-annealing treatment was carried out in N2 ambient at 650 °C, initial re-crystallization of the GaN grains was observed while the evidence of Ga2O3 almost disappeared. As the NH3 annealing was conducted at 950 °C, more effect of re-crystallization occurred but with less grains coalescence. Three dominant XRD peaks of GaN in (10 1 bar 0) , (0002) and (10 1 bar 1) orientations were evident. Near band edge (NBE) related emission in GaN was also observed. The significant improvement was attributed to simultaneous recrystallization and effective reduction of N deficiency density. The post-annealing in a mixture of N2 and NH3 ambient at 950 °C was also conducted, but has limited the effectiveness of the N atoms to incorporate on the GaN layer due to 'clouding' effect by the inert N2 gas. Further increase in the annealing temperature at 980 °C and 1100 °C, respectively caused severe deteriorations of the structural and optical properties of the GaN layer. Overall, this work demonstrated initial potential in improving polycrystalline GaN material in simple and inexpensive manner.

  4. The Effect of Hydrogen Annealing on the Impurity Content of Alumina-Forming Alloys

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    2000-01-01

    Previously, the effect of hydrogen annealing on increasing the adhesion of Al2O3 scales had been related to the effective desulfurization that occurred during this process. The simultaneous reduction of other impurities has now been re-examined for up to 20 impurity elements in the case of five different alloys (NiCrAl, FeCrAl, PWA 1480, Rene'142, and Rene'N5). Hydrogen annealing produced measurable reductions in elemental concentration for B, C, Na, Mg, P, K, Sr, or Sn in varying degrees for at least one and up to three of these alloys. No single element was reduced by hydrogen annealing for all the alloys except sulfur. In many cases spalling occurred at low levels of these other impurities, while in other cases the scales were adherent at high levels of the impurities. No impurity besides sulfur was strongly correlated with adhesion.

  5. Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

    NASA Astrophysics Data System (ADS)

    Wu, Hao; Ji, Lian; Harasawa, Ryo; Yasue, Yuya; Aritake, Takanori; Jiang, Canyu; Lu, Shulong; Tackeuchi, Atsushi

    2016-08-01

    The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

  6. Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

    SciTech Connect

    Kita, Takashi; Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro; Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro; Ishihara, Tsuguo; Izumi, Hirokazu

    2015-04-28

    We studied energy transfer from AlN to doped Gd{sup 3+} ions as a function of the post-thermal annealing temperature. Gd-doped AlN thin films were deposited on fused-silica substrates using a reactive radio-frequency magnetron sputtering technique. The film is a c-axis oriented polycrystal. The intra-orbital electron transition in Gd{sup 3+} showed an atomically sharp luminescence at 3.9 eV (318 nm). The photoluminescence (PL) excitation spectrum exhibited a resonant peak, indicating efficient energy transfer from the host AlN crystal to Gd{sup 3+} ions. The PL intensity increases approximately ten times by thermal annealing. The PL decay lifetime becomes long with annealing, and mid-gap luminescence relating to the crystal defects in AlN was also found to be reduced by annealing. These results suggest that energy dissipation of excited carriers in AlN was suppressed by annealing, and the efficiency of energy transfer into Gd{sup 3+} was improved.

  7. The annealing effect on structure, magnetoresistance and magnetic properties of Co/Bi/Co thin films

    NASA Astrophysics Data System (ADS)

    Vorobiov, S. I.; Shutylieva, O. V.; Pazukha, I. M.; Chornous, A. M.

    2016-06-01

    Co/Bi/Co thin films were prepared by alternately sputtering at substrate temperature 460K. Their structure, magnetoresistance and magnetic properties were studied using transmission electron microscopy (TEM), software-hardware complex with current-in-plane geometries, and vibrating sample magnetometer (VSM). The trilayer systems have been investigated as functions of the Bi layer thickness and temperature. The film structure in both as-deposited and annealed at 680K states is a granulated structure which consists of a Co magnetic matrix with embedded Bi granules. The film structure after annealing at 900K depends on Bi concentrations and changes from the fcc-Co+amorphous Bi to a fcc-Co+tetragonal phase of Bi2O3 of around 17 at.%. Magnetoresistance has demonstrated independence from annealing processes in the temperature range from 300 to 680K. Besides, the oscillation dependence of magnetoresistance with Bi thickness has been observed. The saturation and remanent magnetization are reduced with the increase of Bi thickness and increase with increasing the annealing temperature; the coercivity slightly depends on Bi thickness in as-deposited state and increases more than 10 times at t_{Bi}=30 nm after annealing at 680K.

  8. Effect of Thermal Annealing in Ammonia on the Properties of InGaN Nanowires with Different Indium Concentrations

    SciTech Connect

    Hahn, Cristopher; Cordones, Amy; Andrews, Sean; Gao, Hanwei; Fu, Anthony; Leone, Stephen; Yang, Peidong

    2012-10-02

    The utility of an annealing procedure in ammonia ambient is investigated for improving the optical characteristics of InxGa1?xN nanowires (0.07 ≤ x ≤ 0.42) grown on c-Al2O3 using a halide chemical vapor deposition method. Morphological studies using scanning electron microscopy confirm that the nanowire morphology is retained after annealing in ammonia at temperatures up to 800 ?C. However, significant indium etching and composition inhomogeneities are observed for higher indium composition nanowires (x = 0.28, 0.42), as measured by energy-dispersive X-ray spectroscopy and Z-contrast scanning transmission electron microscopy. Structural analyses, using X-ray diffraction and high-resolution transmission electron microscopy, indicate that this is a result of the greater thermal instability of higher indium composition nanowires. The effect of these structural changes on the optical quality of InGaN nanowires is examined using steady-state and time-resolved photoluminescence measurements. Annealing in ammonia enhances the integrated photoluminescence intensity of InxGa1?xN nanowires by up to a factor of 4.11 ? 0.03 (for x = 0.42) by increasing the rate of radiative recombination. Fitting of photoluminescence decay curves to a Kohlrausch stretched exponential indicates that this increase is directly related to a larger distribution of recombination rates from composition inhomogeneities caused by annealing. The results demonstrate the role of thermal instability on the improved optical properties of InGaN nanowires annealed in ammonia.

  9. Effect of deposition and annealing temperature on mechanical properties of TaN film

    NASA Astrophysics Data System (ADS)

    Liu, X.; Ma, G. J.; Sun, G.; Duan, Y. P.; Liu, S. H.

    2011-11-01

    Tantalum nitride films (TaN) were synthesized by microwave ECR-DC sputtering. The effects of deposition and annealing temperature on mechanical properties of TaN films were investigated. Cross-section pattern, microstructure and binding energy of the films were investigated by scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Mechanical properties were evaluated using nano-indentation and scratch tester. The results showed that the maximal hardness value of approximately 40 GPa was deposited in the TaN sample at 573 K. While the preparation temperature decreased, the hardness, modulus and adhesion of TaN film also decreased. Hardness and modulus also decreased with the increase in annealing temperature. Meanwhile the adhesion strength was also sensitive to the annealing temperature, with a maximum adhesion strength of 40 N measured in the TaN film annealed at 448 K. The results demonstrated that a desirable mechanical property of TaN films deposited by DC reactive magnetron sputtering can be obtained by controlling the deposition and annealing temperature.

  10. High-fluence Ga-implanted silicon—The effect of annealing and cover layers

    SciTech Connect

    Fiedler, J. Heera, V.; Hübner, R.; Voelskow, M.; Germer, S.; Schmidt, B.; Skorupa, W.

    2014-07-14

    The influence of SiO{sub 2} and SiN{sub x} cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750 °C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20 ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900 °C. However, in this case, Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiO{sub x} grown during annealing which only can be avoided by the usage of SiN{sub x} cover layers.

  11. Effect of Post Deposition Annealing Treatments on Properties of AZO Thin Films for Schottky Diode Applications.

    PubMed

    Singh, Shaivalini; Park, Si-Hyun

    2016-01-01

    High-quality aluminum (Al) doped ZnO (AZO) thin films were deposited on silicon substrates by RF sputtering at room temperature. The deposited films were annealed from the temperatures 350 °C to 650 °C in pure nitrogen (N₂) ambient. The effects of annealing on the microstructural, optical and electrical properties of the AZO films were investigated. A detailed analysis by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Four Probe and Hall measurements was performed to study the properties of these AZO thin films. It was observed that all of the as-deposited and annealed AZO films have homogenous surfaces and hexagonal wurtzite structures with good crystalline quality. The study also suggested that there was an intermediate post annealing temperature (450 °C) at which the deposited ZnO film exhibit best surface characteristics. Pd/AZO Schottky devices were fabricated with 450 °C annealed AZO thin films and the parameters of Schottky devices were extracted from I-V characteristics. These results indicated that the Pd/AZO films were very much suitable for various optoelectronics applications particularly for metal semiconductor metal based UV detector application. PMID:27398537

  12. Effects of thermal annealing on the evolution of He bubbles in zirconia

    NASA Astrophysics Data System (ADS)

    Kong, Shuyan; Velisa, Gihan; Debelle, Aurélien; Yang, Tengfei; Wang, Chenxu; Thomé, Lionel; Xue, Jianming; Yan, Sha; Wang, Yugang

    2014-05-01

    Single crystals of yttria-stabilized zirconia were implanted with 100 keV He ions at two fluences of 9 × 1016 and 3 × 1017 cm-2 (5 and 17 He at.%). In order to investigate the effect of thermal annealing on the evolution of both zirconia lattice and implanted He, the samples were annealed at several temperatures ranging from 500 °C to 1400 °C. Three complementary analysis techniques, RBS/C, AFM and TEM were used to study structural damage and surface morphology of the crystal before and after implantation. Results show different He evolution phenomena under the two implantation fluences. It is inferred that, at the lower fluence, the migration and agglomeration of He ions lead to bubble formation after annealing. These bubbles jack up sample surface causing the deformation of surface region and the damage level of surface region increase accordingly. As the temperature continues to increase, He gradually releases and the damage recovers. However, at the higher fluence, the He concentration is sufficient to induce bubble precipitation without annealing. He release and damage recovering is less efficient upon annealing.

  13. Effect of external electric field on morphology of copper phthalocyanine-fullerene blended films during annealing

    NASA Astrophysics Data System (ADS)

    Parhi, Anukul Prasad; Iyer, S. Sundar Kumar

    2016-03-01

    The thin-film morphology and segregated phases of constituents in blends of organic semiconductors play an important role in determining the performance of devices fabricated with these constituents. In this study, we explored the effect of an external electric field applied during annealing on the morphology and phase of blended films of two popular organic semiconductors, copper pthalocyanine (CuPc) and buckminsterfullerene (C60). Films of different blend ratios annealed at various temperatures in both the presence and absence of an electric field were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), and ultraviolet-visible (UV-vis) spectroscopy. The characteristics of annealed pristine CuPc films were also included for comparison. The observed changes in the properties of the blended films following the annealing, including the abrupt phase segregation of the blended constituents in the films, are discussed. The polarizability of the molecules was calculated using density functional theory (DFT) to explain the interaction, stacking, and segregation of the molecules in the blend. The results showed that application of an electric field during annealing of the blended films is an additional control parameter that can help tune the properties of the blended film. [Figure not available: see fulltext.

  14. Effect of Oxygen Annealing on the Electrical Properties of PBLZST Anti-ferroelectric Ceramics

    NASA Astrophysics Data System (ADS)

    Yi, Jinqiao; Xiong, Xue; Liu, Sisi; Jiang, Shenglin

    2015-11-01

    The effect of oxygen annealing on the electrical properties of (Pb0.97- x Ba x La0.02)(Zr0.6Sn0.32Ti0.08)O3 (PBLZST) anti-ferroelectric (AFE) ceramics has been investigated through measuring its phase structure, electric field-induced polarization and dielectric properties. The oxygen annealing process can significantly improve the stability of the AFE phase and decrease the dielectric constant peaks. The saturation polarization of the PBLZST samples annealed in O2 increases gradually when x < 0.085, but it decreases when x > 0.085. Compared with the conventional sintering method, the hysteresis switch fields of samples annealed in O2 maintains the consistent stability, and the dielectric constant peaks drop drastically and are simultaneously broadened, except at x = 0.095. The Curie temperature decreases greatly after oxygen annealing when x is smaller than 0.08, but increases slightly when x is greater than 0.08. When x = 0.085, the difference of c/a ratios between the samples processed by the two methods reaches a maximum of about 0.00614, and the increment of the saturation polarization is 7 μC/cm2.

  15. Effects of rapid thermal annealing conditions on GaInNAs band gap blueshift and photoluminescence intensity

    SciTech Connect

    Liverini, V.; Rutz, A.; Keller, U.; Schoen, S.

    2006-06-01

    We have studied the effects of various conditions of rapid thermal annealing (RTA) on 10 nm GaInNAs/GaAs single quantum wells (SQWs) with fixed indium concentration and increasing nitrogen content to obtain photoluminescence (PL) in the telecom wavelength regime of 1.3 and 1.5 {mu}m. Specifically, we analyzed the results of annealing for a fixed short time but at different temperatures and for longer times at a fixed temperature. In all experiments, InGaAs SQWs with the same In concentration were used as references. For both RTA conditions, the well-known blueshift of the band gap energy and the PL intensity improvement show trends that reveal that these are unrelated effects. At high RTA temperatures the PL efficiency reaches a maximum and then drops independently of N content. On the contrary, the blueshift experiences a rapid increase up to 700 deg. C (strong blueshift regime) and it saturates above this temperature (weak blueshift regime). Both these blueshift regimes are related to the nitrogen content in the SQWs but in different ways. In the strong blueshift regime, we could obtain activation energy for the blueshift process in the range of 1.25 eV, which increases with N content. Analysis with high-resolution x-ray diffraction (HRXRD) shows that the blueshift experienced in this regime is not due to a stoichiometric change in the QW. In the weak blueshift regime, the blueshift, which is only partly due to In outdiffusion, saturates more slowly the higher the N content. Annealing at the same temperature (600 deg. C) for a longer time shows that the blueshift saturates earlier than the PL intensity and that samples with higher nitrogen experience a larger blueshift. Only a small In outdiffusion for annealing at high temperatures (>650 deg. C) and long duration was observed. However, this modest stoichiometric change does not explain the large blueshift experienced by the GaInNAs SQWs. We conclude that the mechanism responsible for the drastic blueshift after

  16. Experimental signature of programmable quantum annealing.

    PubMed

    Boixo, Sergio; Albash, Tameem; Spedalieri, Federico M; Chancellor, Nicholas; Lidar, Daniel A

    2013-01-01

    Quantum annealing is a general strategy for solving difficult optimization problems with the aid of quantum adiabatic evolution. Both analytical and numerical evidence suggests that under idealized, closed system conditions, quantum annealing can outperform classical thermalization-based algorithms such as simulated annealing. Current engineered quantum annealing devices have a decoherence timescale which is orders of magnitude shorter than the adiabatic evolution time. Do they effectively perform classical thermalization when coupled to a decohering thermal environment? Here we present an experimental signature which is consistent with quantum annealing, and at the same time inconsistent with classical thermalization. Our experiment uses groups of eight superconducting flux qubits with programmable spin-spin couplings, embedded on a commercially available chip with >100 functional qubits. This suggests that programmable quantum devices, scalable with current superconducting technology, implement quantum annealing with a surprising robustness against noise and imperfections.

  17. Through-vial impedance spectroscopy of the mechanisms of annealing in the freeze-drying of maltodextrin: the impact of annealing hold time and temperature on the primary drying rate.

    PubMed

    Smith, Geoff; Arshad, Muhammad Sohail; Polygalov, Eugene; Ermolina, Irina

    2014-06-01

    The study aims to investigate the impact of annealing hold time and temperature on the primary drying rate/duration of a 10% (w/v) solution of maltodextrin with an emphasis on how the mechanisms of annealing might be understood from the in-vial measurements of the ice crystal growth and the glass transition. The electrical impedance of the solution within a modified glass vial was recorded between 10 and 10(6) Hz during freeze-drying cycles with varying annealing hold times (1-5 h) and temperatures. Primary drying times decreased by 7%, 27% and 34% (1.1, 4.3 and 5.5 h) with the inclusion of an annealing step at temperatures of -15°C, -10°C and -5°C, respectively. The glass transition was recorded at approximately -16°C during the re-heating and re-cooling steps, which is close to the glass transition (Tg ') reported for 10% (w/v) maltodextrin and therefore indicates that a maximum freeze concentration (∼86%, w/w, from the Gordon-Taylor equation) was achieved during first freezing, with no further ice being formed on annealing. This observation, coupled to the decrease in electrical resistance that was observed during the annealing hold time, suggests that the reduction in the drying time was because of improved connectivity of ice crystals because of Ostwald ripening rather than devitrification.

  18. Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devices.

    PubMed

    Rathi, Servin; Lee, In-yeal; Park, Jin-Hyung; Kim, Bong-Jun; Kim, Hyun-Tak; Kim, Gil-Ho

    2014-11-26

    In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.

  19. High temperature annealing effects on low energy iron implanted SiO 2

    NASA Astrophysics Data System (ADS)

    Kennedy, J.; Leveneur, J.; Markwitz, A.

    2012-02-01

    15 keV Fe ions were implanted into a thermally grown silica film with a fluence of 1 × 10 16 at./cm 2 resulting in a near Gaussian concentration profile peaking at 8 at.% about 15 nm under the surface. High vacuum (˜10 -7 mbar) furnace annealing and electron beam annealing at high temperature resulted in diffusion of Fe inside the oxide film. Segregation of Fe atoms at the SiO 2 surface and SiO 2/Si interface was observed in both cases. EBA resulted in faster precipitation and lower out-diffusion of Fe. In-situ Rutherford Backscattering Spectrometry was performed during high vacuum annealing and is shown to be an appropriate method to investigate the diffusion rate. The differences observed between the methods are explained by the effect of excess electrons and ionization induced by the electron beam on the oxygen-vacancy mediated displacement mechanism and on the reduction of Fe oxides.

  20. Effect of annealing atmosphere on phase formation and electrical characteristics of bismuth ferrite thin films

    SciTech Connect

    Simoes, A.Z.; Riccardi, C.S.; Dos Santos, M.L.; Garcia, F. Gonzalez; Longo, E.; Varela, J.A.

    2009-08-05

    Bismuth ferrite thin films were deposited on Pt/Ti/SiO{sub 2}/Si substrates by a soft chemical method and spin-coating technique. The effect of annealing atmosphere (air, N{sub 2} and O{sub 2}) on the structure and electrical properties of the films are reported. X-ray diffraction analysis reveals that the film annealed in air atmosphere is a single-phase perovskite structure. The films annealed in air showed better crystallinity and the presence of a single BFO phase leading to lower leakage current density and superior ferroelectric hysteresis loops at room temperature. In this way, we reveal that BFO film crystallized in air atmosphere by the soft chemical method can be useful for practical applications, including nonvolatile digital memories, spintronics and data-storage media.

  1. Relationship among grain size, annealing twins and shape memory effect in Fe–Mn–Si based shape memory alloys

    NASA Astrophysics Data System (ADS)

    Wang, Gaixia; Peng, Huabei; Zhang, Chengyan; Wang, Shanling; Wen, Yuhua

    2016-07-01

    In order to clarify the relationship among grain size, annealing twins and the shape memory effect in Fe–Mn–Si based shape memory alloys, the Fe–21.63Mn–5.60Si–9.32Cr–5.38Ni (weight %) alloy with a grain size ranging from 48.9 μm–253.6 μm was obtained by adjusting the heating temperature or heating time after 20% cold-rolling. The densities of grain boundaries and annealing twins increase with a decrease in grain size, whereas the volume fraction and width of stress-induced ε martensite after 9% deformation at Ms + 10 K decrease. This result indicates that grain refinement raises the constraint effects of grain boundaries and annealing twins upon martensitic transformation. In this case, the ability to suppress the plastic deformation and facilitate the stress-induced ε martensite transformation deteriorates after grain refinement owing to the enhancement of the constraint effects. It is demonstrated by the result that the difference at Ms + 10 K between the critical stress for plastic yielding and that for inducing martensitic transformation is smaller for the specimen with a grain size of 48.9 μm than for the specimen with a grain size of 253.6 μm. Therefore, the shape memory effect declined by decreasing the grain size.

  2. Relationship among grain size, annealing twins and shape memory effect in Fe-Mn-Si based shape memory alloys

    NASA Astrophysics Data System (ADS)

    Wang, Gaixia; Peng, Huabei; Zhang, Chengyan; Wang, Shanling; Wen, Yuhua

    2016-07-01

    In order to clarify the relationship among grain size, annealing twins and the shape memory effect in Fe-Mn-Si based shape memory alloys, the Fe-21.63Mn-5.60Si-9.32Cr-5.38Ni (weight %) alloy with a grain size ranging from 48.9 μm-253.6 μm was obtained by adjusting the heating temperature or heating time after 20% cold-rolling. The densities of grain boundaries and annealing twins increase with a decrease in grain size, whereas the volume fraction and width of stress-induced ɛ martensite after 9% deformation at Ms + 10 K decrease. This result indicates that grain refinement raises the constraint effects of grain boundaries and annealing twins upon martensitic transformation. In this case, the ability to suppress the plastic deformation and facilitate the stress-induced ɛ martensite transformation deteriorates after grain refinement owing to the enhancement of the constraint effects. It is demonstrated by the result that the difference at Ms + 10 K between the critical stress for plastic yielding and that for inducing martensitic transformation is smaller for the specimen with a grain size of 48.9 μm than for the specimen with a grain size of 253.6 μm. Therefore, the shape memory effect declined by decreasing the grain size.

  3. Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene

    NASA Astrophysics Data System (ADS)

    Webb, Matthew J.; Polley, Craig; Dirscherl, Kai; Burwell, Gregory; Palmgren, Pâl; Niu, Yuran; Lundstedt, Anna; Zakharov, Alexei A.; Guy, Owen J.; Balasubramanian, Thiagarajan; Yakimova, Rositsa; Grennberg, Helena

    2014-08-01

    By combining ozone and water, the effect of exposing epitaxial graphene on silicon carbide to an aggressive wet-chemical process has been evaluated after high temperature annealing in ultra high vacuum. The decomposition of ozone in water produces a number of oxidizing species, however, despite long exposure times to the aqueous-ozone environment, no graphene oxide was observed after the two-step process. The systems were comprehensively characterized before and after processing using Raman spectroscopy, core level photoemission spectroscopy, and angle resolved photoemission spectroscopy together with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. In spite of the chemical potential of the aqueous-ozone reaction environment, the graphene domains were largely unaffected raising the prospect of employing such simple chemical and annealing protocols to clean or prepare epitaxial graphene surfaces.

  4. Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene

    SciTech Connect

    Webb, Matthew J. Lundstedt, Anna; Grennberg, Helena; Polley, Craig; Niu, Yuran; Zakharov, Alexei A.; Balasubramanian, Thiagarajan; Dirscherl, Kai; Burwell, Gregory; Guy, Owen J.; Palmgren, Pål; Yakimova, Rositsa

    2014-08-25

    By combining ozone and water, the effect of exposing epitaxial graphene on silicon carbide to an aggressive wet-chemical process has been evaluated after high temperature annealing in ultra high vacuum. The decomposition of ozone in water produces a number of oxidizing species, however, despite long exposure times to the aqueous-ozone environment, no graphene oxide was observed after the two-step process. The systems were comprehensively characterized before and after processing using Raman spectroscopy, core level photoemission spectroscopy, and angle resolved photoemission spectroscopy together with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. In spite of the chemical potential of the aqueous-ozone reaction environment, the graphene domains were largely unaffected raising the prospect of employing such simple chemical and annealing protocols to clean or prepare epitaxial graphene surfaces.

  5. Photo annealing effect on p-doped inverted organic solar cell

    SciTech Connect

    Lafalce, Evan; Toglia, Patrick; Lewis, Jason E.; Jiang, Xiaomei

    2014-06-28

    We report the transient positive photo annealing effect in which over 600% boost of power conversion efficiency was observed in inverted organic photovoltaic devices (OPV) made from P3HT/PCBM by spray method, after 2 hrs of constant solar AM 1.5 irradiation at low temperature. This is opposite to usual photodegradation of OPV, and cannot be explained by thermal activation alone since the mere temperature effect could only account for 30% of the enhancement. We have investigated the temperature dependence, cell geometry, oxygen influence, and conclude that, for p-doped active layer at room temperature, the predominant mechanism is photo-desorption of O{sub 2}, which eliminates electron traps and reduces space charge screening. As temperature decreases, thermal activation and deep trap-state filling start to show noticeable effect on the enhancement of photocurrent at intermediate low temperature (T = 125 K). At very low temperature, the dominant mechanism for photo annealing is trap-filling, which significantly reduces recombination between free and trapped carriers. At all temperature, photo annealing effect depends on illumination direction from cathode or anode. We also explained the large fluctuation of photocurrent by the capture/reemit of trapped electrons from shallow electron traps of O{sub 2}{sup -} generated by photo-doping. Our study has demonstrated the dynamic process of photo-doping and photo-desorption, and shown that photo annealing in vacuum can be an efficient method to improve OPV device efficiency.

  6. Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

    SciTech Connect

    Wang, Zujun Chen, Wei; He, Baoping; Yao, Zhibin; Xiao, Zhigang; Sheng, Jiangkun; Liu, Minbo

    2015-10-15

    The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (V{sub S}) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. The V{sub S} degradation levels depend on the dose rates. The V{sub S} degradation mechanism induced by dose rate and annealing effects is analyzed. The V{sub S} at 20 krad(Si) with the dose rate of 0.03 rad(Si)/s are supplemented to assure the degradation curves between the dose rates of 0.1 and 0.01 rad(Si)/s. The CCDs are divided into two groups, with one group biased and the other unbiased during {sup 60}Co γ radiation. The V{sub S} degradation levels of the biased CCDs during radiation are more severe than that of the unbiased CCDs.

  7. Effect of thermal annealing on the phase evolution of silver tungstate in Ag/WO₃ films.

    PubMed

    Bose, R Jolly; Sreedharan, R Sreeja; Krishnan, R Resmi; Reddy, V R; Gupta, Mukul; Ganesan, V; Sudheer, S K; Pillai, V P Mahadevan

    2015-06-15

    Silver/tungsten oxide multi-layer films are deposited over quartz substrates by RF magnetron sputtering technique and the films are annealed at temperatures 200, 400 and 600°C. The effect of thermal annealing on the phase evolution of silver tungstate phase in Ag/WO3 films is studied extensively using techniques like X-ray diffraction, micro-Raman analysis, atomic force microscopy and photoluminescence studies. The XRD pattern of the as-deposited film shows only the peaks of cubic phase of silver. The film annealed at 200°C shows the presence of XRD peaks corresponding to orthorhombic phase of Ag2WO4 and peaks corresponding to cubic phase of silver with reduced intensity. It is found that, as annealing temperature increases, the volume fraction of Ag decreases and that of Ag2WO4 phase increases and becomes highest at a temperature of 400°C. When the temperature increases beyond 400°C, the volume fraction of Ag2WO4 decreases, due to its decomposition into silver and oxygen deficient phase Ag2W4O13. The micro-Raman spectra of the annealed films show the characteristic bands of tungstate phase which is in agreement with XRD analysis. The surface morphology of the films studied by atomic force microscopy reveals that the particle size and r.m.s roughness are highest for the sample annealed at 400°C. In the photoluminescence study, the films with silver tungstate phase show an emission peak in blue region centered around the wavelength 441 nm (excitation wavelength 256 nm).

  8. Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors

    SciTech Connect

    Abderrahmane, A.; Takahashi, H.; Tashiro, T.; Ko, P. J.; Okada, H.; Sandhu, A.; Sato, S.; Ohshima, T.

    2014-02-20

    The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380keV and fluences of 10{sup 14}, 10{sup 15} and 10{sup 16} protons/cm{sup 2} is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 10{sup 15} protons/cm{sup 2} the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.

  9. Effect of Annealing Treatment on Erosion-Corrosion of Zr-Based Bulk Metallic Glass in Saline-Sand Slurry

    NASA Astrophysics Data System (ADS)

    Ji, Xiulin; Shan, Yiping; Chen, Yueyue; Wang, Hui

    2016-06-01

    Bulk metallic glass (BMG) may be a good candidate to solve the erosion-corrosion (E-C) problems of marine pumps in sand-containing seawater. Since annealing treatment is an effective way to improve plasticity of BMGs, the effect of annealing treatment on E-C wear of Zr-based BMG in saline-sand slurry was investigated. All of the annealed BMG samples were crystallized and the quantity of (Zr, Cu) phase increased but that of Al4Cu9 phase decreased with the increase of annealing temperature from 360 to 480 °C. Accordingly, annealing treatment enhances plasticity of the as-cast BMG at the cost of hardness and corrosion resistance. Moreover, 480 °C annealed BMG sample possesses the highest hardness and the lowest corrosion current density in all of the annealed BMG samples. Using a slurry pot erosion tester, the E-C wear of the as-cast and annealed BMG samples was studied under different impingement angles, impact velocities, and concentrations in saline-sand slurry. With the improvement of plasticity, 480 °C annealed BMG sample exhibits the best E-C wear resistance under high impingement angle, high impact velocity, and high sand concentration.

  10. Annealing of Co-Cr dental alloy: effects on nanostructure and Rockwell hardness

    PubMed Central

    Soylu, Elif Hilal; İde, Semra; Kılıç, Selim; Sipahi, Cumhur; Pişkin, Bulent; Gökçe, Hasan Suat

    2013-01-01

    PURPOSE The aim of the study was to evaluate the effect of annealing on the nanostructure and hardness of Co-Cr metal ceramic samples that were fabricated with a direct metal laser sintering (DMLS) technique. MATERIALS AND METHODS Five groups of Co-Cr dental alloy samples were manufactured in a rectangular form measuring 4 × 2 × 2 mm. Samples fabricated by a conventional casting technique (Group I) and prefabricated milling blanks (Group II) were examined as conventional technique groups. The DMLS samples were randomly divided into three groups as not annealed (Group III), annealed in argon atmosphere (Group IV), or annealed in oxygen atmosphere (Group V). The nanostructure was examined with the small-angle X-ray scattering method. The Rockwell hardness test was used to measure the hardness changes in each group, and the means and standard deviations were statistically analyzed by one-way ANOVA for comparison of continuous variables and Tukey's HSD test was used for post hoc analysis. P values of <.05 were accepted as statistically significant. RESULTS The general nanostructures of the samples were composed of small spherical entities stacked atop one another in dendritic form. All groups also displayed different hardness values depending on the manufacturing technique. The annealing procedure and environment directly affected both the nanostructure and hardness of the Co-Cr alloy. Group III exhibited a non-homogeneous structure and increased hardness (48.16 ± 3.02 HRC) because the annealing process was incomplete and the inner stress was not relieved. Annealing in argon atmosphere of Group IV not only relieved the inner stresses but also decreased the hardness (27.40 ± 3.98 HRC). The results of fitting function presented that Group IV was the most homogeneous product as the minimum bilayer thickness was measured (7.11 Å). CONCLUSION After the manufacturing with DMLS technique, annealing in argon atmosphere is an essential process for Co-Cr metal ceramic

  11. Effects of P implantation and post-implantation annealing on defect formation in ZnO

    NASA Astrophysics Data System (ADS)

    Wang, X. J.; Chen, W. M.; Ren, F.; Pearton, S.; Buyanova, I. A.

    2012-02-01

    Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to examine the effects of P implantation and post-implantation annealing on defect formation in ZnO single crystals. From ODMR, the main defects created by ion implantation include oxygen and zinc vacancies as a well as a deep donor labeled as PD. The formation of the PD defect is likely promoted by the presence of P as it could only be detected in the P-containing ZnO. The VO and PD centers are found to exhibit low thermal stability and can be annealed out at 800 °C. On the other hand, a new set of defects, such as Z, T, and D* centers, is detected after annealing. Based on measured spectral dependences of the ODMR signals, the VO, VZn, and PD centers are shown to participate in spin-dependent recombination processes related to red emissions, whereas the Z, T, and D* centers are involved in radiative recombination over a wide spectral range of 1.55-2.5 eV. From the PL measurements, combined effects of implantation and annealing also lead to appearance of a new PL band peaking at ˜3.156 eV, likely due to donor-acceptor-pair recombination. The formation of the involved deep acceptor is concluded to be facilitated by the presence of P.

  12. Effects of annealing on the ferromagnetism and photoluminescence of Cu-doped ZnO nanowires.

    PubMed

    Xu, H J; Zhu, H C; Shan, X D; Liu, Y X; Gao, J Y; Zhang, X Z; Zhang, J M; Wang, P W; Hou, Y M; Yu, D P

    2010-01-13

    Room temperature ferromagnetic Cu-doped ZnO nanowires have been synthesized using the chemical vapor deposition method. By combining structural characterizations and comparative annealing experiments, it has been found that both extrinsic (CuO nanoparticles) and intrinsic (Zn(1-x)Cu(x)O nanowires) sources are responsible for the observed ferromagnetic ordering of the as-grown samples. As regards the former, annealing in Zn vapor led to a dramatic decrease of the ferromagnetism. For the latter, a reversible switching of the ferromagnetism was observed with sequential annealings in Zn vapor and oxygen ambience respectively, which agreed well with previous reports for Cu-doped ZnO films. In addition, we have for the first time observed low temperature photoluminescence changed with magnetic properties upon annealing in different conditions, which revealed the crucial role played by interstitial zinc in directly mediating high T(c) ferromagnetism and indirectly modulating the Cu-related structured green emission via different charge transfer transitions.

  13. Effects of thermal annealing and reirradiation on toughness of reactor pressure vessel steels

    SciTech Connect

    Nanstad, R.K.; Iskander, S.K.; Sokolov, M.A.

    1997-02-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response, or {open_quotes}recovery,{close_quotes} of several irradiated RPV steels; it also includes recent results from both ORNL and the Russian Research Center-Kurchatov Institute (RRC-KI) on a cooperative program of irradiation, annealing and reirradiation of both U.S. and Russian RPV steels. The cooperative program was conducted under the auspices of Working Group 3, U.S./Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS). The materials investigated are an RPV plate and various submerged-arc welds, with tensile, Charpy impact toughness, and fracture toughness results variously determined. Experimental results are compared with applicable prediction guidelines, while observed differences in annealing responses and reirradiation rates are discussed.

  14. Thermal annealing effects on the magnetic behavior of Ce 2NiSi 3

    NASA Astrophysics Data System (ADS)

    Rojas, D. P.; Rodríguez Fernández, J.; Espeso, J. I.; Gómez Sal, J. C.; da Silva, L. M.; Gandra, F. G.; dos Santos, A. O.; Medina, A. N.

    2010-10-01

    We have investigated the crystallographic, magnetic and thermodynamic properties of the as-cast and annealed Ce 2NiSi 3 alloys, crystallizing in the AlB 2-type hexagonal structure. The DC-magnetic susceptibility data show that the as-cast sample exhibits an antiferromagnetic (AFM) ordering below TN= 3.8 K, whereas the annealed sample shows, at 4.2 K, a magnetic transition of AFM nature and, around 2.5 K, an additional anomaly. The specific heat shows a peak with cmax=7.4 J/mol K at 3.8 K for the as cast sample, which shifts to lower temperatures when the magnetic field increases, consistent with the antiferromagnetic nature of the transition. On the other hand, in the annealed alloy, the maximum of the specific heat peak reaches 9.3 J/mol K at 4.2 K, and no additional anomalies were observed. The different magnetic behavior between the as-cast and annealed samples is attributed to thermal effects on the structural disorder of nickel and silicon atoms, as already observed in other isotypic R 2TSi 3 alloys, where R=U or Ce, and T= transition metal.

  15. Effect of annealing on photovoltaic performance of fabricated planar organic-inorganic perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Baltakesmez, Ali; Biber, Mehmet; Tüzemen, Sebahattin

    2016-04-01

    We fabricated planar perovskite solar cells used CH3NH3PbI3-xClx for light harvesting to investigate effect of annealing on photovoltaic performance of fabricated device. The devices have an architecture of Glass/ITO/Pedot:PSS/Perovskite/PC61BM/Al. Layers of hole transport (Pedot:PSS), active and electron transport (PC61BM) were prepared from solution based one step deposition method by a spin coater and standard annealing procedure. The current‑voltage curves of devices were measured inside the glovebox using a Keithley 2400 sourcemeter. The cells were illuminated by a solar simulator have optical intensity value of 300 mW/cm2. For the best cells, while PCE value of 5.78% before the annealing, photovoltaic efficiency was improved average 13% delivered a short-circuit current density of 3.20 mA/cm2, open-circuit voltage of 0.82 V and fill factor of 0.74, leading to an efficiency of 6.54% with respect to prior to annealing.

  16. Effect of annealing on photovoltaic performance of fabricated planar organic-inorganic perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Baltakesmez, Ali; Biber, Mehmet; Tüzemen, Sebahattin

    2016-04-01

    We fabricated planar perovskite solar cells used CH3NH3PbI3-xClx for light harvesting to investigate effect of annealing on photovoltaic performance of fabricated device. The devices have an architecture of Glass/ITO/Pedot:PSS/Perovskite/PC61BM/Al. Layers of hole transport (Pedot:PSS), active and electron transport (PC61BM) were prepared from solution based one step deposition method by a spin coater and standard annealing procedure. The current-voltage curves of devices were measured inside the glovebox using a Keithley 2400 sourcemeter. The cells were illuminated by a solar simulator have optical intensity value of 300 mW/cm2. For the best cells, while PCE value of 5.78% before the annealing, photovoltaic efficiency was improved average 13% delivered a short-circuit current density of 3.20 mA/cm2, open-circuit voltage of 0.82 V and fill factor of 0.74, leading to an efficiency of 6.54% with respect to prior to annealing.

  17. Tellurium precipitates in (Cd,Mn)Te:V crystals: Effects of annealing

    SciTech Connect

    Kochanowska,D.; Mycielski, A.; Witkowska-Baran, M.; Szadkowski, A.; Witkowska, B.; Kaliszek, W.; Cui, Y.; James, R. B.

    2008-10-19

    We suggest that (Cd,Mn)Te is a suitable material for fabricating gamma- and X-ray detectors. Our investigations, reported here, are focused on producing high-quality (Cd,Mn)Te crystals with high resistivity (10{sup 9} {Omega}-cm) by the Bridgman method. As-grown, undoped (Cd,Mn)Te crystals are typically p-type, signifying that they contain excess Cd vacancies (acting as acceptors), accumulated during growth. Doping with vanadium atoms, which function as compensating centers, results in a semi-insulating material (Cd,Mn)Te:V. Properly annealing the platelets in cadmium vapors at uniform temperature reduces the number of cadmium vacancies, and lowers the level of the vanadium doping required for compensation. We found that annealing in cadmium vapors not only decreases the concentration of the native cadmium vacancies but also improves the crystal's quality. Infrared observations of the interior of the samples show that annealing in a temperature gradient perpendicular to the platelet has an additional effect, viz., the tellurium precipitates migrate towards the side where the temperature is higher. We demonstrate, with IR pictures of monocrystalline (Cd,Mn)Te:V platelets cut parallel to the (111) crystal planes, the influence on tellurium inclusions and precipitates of various conditions of annealing in cadmium vapors.

  18. Effects of Annealing Temperature on Microstructure and Tensile Properties in Ferritic Lightweight Steels

    NASA Astrophysics Data System (ADS)

    Han, Seung Youb; Shin, Sang Yong; Lee, Hyuk-Joong; Lee, Byeong-Joo; Lee, Sunghak; Kim, Nack J.; Kwak, Jai-Hyun

    2012-03-01

    An investigation was conducted into the effects of annealing temperature on microstructure and tensile properties of ferritic lightweight steels. Two steels were fabricated by varying the C content, and were annealed at 573 K to 1173 K (300 °C to 900 °C) for 1 hour. According to the microstructural analysis results, κ-carbides were formed at about 973 K (700 °C), which was confirmed by equilibrium phase diagrams calculated from a THERMO-CALC program. In the steel containing low carbon content, needle-shaped κ-carbides were homogeneously dispersed in the ferrite matrix, whereas bulky band-shaped martensites were distributed in the steel containing high carbon content. In the 973 K (700 °C)-annealed specimen of the steel containing high carbon content, deformation bands were formed throughout the specimen, while fine carbides were sufficiently deformed inside the deformation bands, thereby resulting in the greatest level of strength and ductility. These results indicated that the appropriate annealing treatment of steel containing high carbon content was useful for the improvement of both strength and ductility over steel containing low carbon content.

  19. Effect of low temperature anneals and nonthermal treatments on the properties of gap fill oxides used in SiGe and III-V devices

    NASA Astrophysics Data System (ADS)

    Ryan, E. Todd; Morin, Pierre; Madan, Anita; Mehta, Sanjay

    2016-07-01

    Silicon dioxide is used to electrically isolate CMOS devices such as fin field effect transistors by filling gaps between the devices (also known as shallow trench isolation). The gap fill oxide typically requires a high temperature anneal in excess of 1000 °C to achieve adequate electrical properties and oxide densification to make the oxide compatible with subsequent fabrication steps such as fin reveal etch. However, the transition from Si-based devices to high mobility channel materials such as SiGe and III-V semiconductors imposes more severe thermal limitations on the processes used for device fabrication, including gap fill oxide annealing. This study provides a framework to quantify and model the effect of anneal temperature and time on the densification of a flowable silicon dioxide as measured by wet etch rate. The experimental wet etch rates allowed the determination of the activation energy and anneal time dependence for oxide densification. Dopant and self-diffusion can degrade the channel material above a critical temperature. We present a model of self-diffusion of Ge and Si in SiGe materials. Together these data allowed us to map the thermal process space for acceptable oxide wet etch rate and self-diffusion. The methodology is also applicable to III-V devices, which require even lower thermal budget. The results highlight the need for nonthermal oxide densification methods such as ultraviolet (UV) and plasma treatments. We demonstrate that several plasma treatments, in place of high temperature annealing, improved the properties of flowable oxide. In addition, UV curing prior to thermal annealing enables acceptable densification with dramatically reduced anneal temperature.

  20. RESIDENCE TIMES OF PARTICLES IN DIFFUSIVE PROTOPLANETARY DISK ENVIRONMENTS. II. RADIAL MOTIONS AND APPLICATIONS TO DUST ANNEALING

    SciTech Connect

    Ciesla, F. J.

    2011-10-10

    The origin of crystalline grains in comets and the outer regions of protoplanetary disks remains a mystery. It has been suggested that such grains form via annealing of amorphous precursors in the hot, inner region of a protoplanetary disk, where the temperatures needed for such transformations were found, and were then transported outward by some dynamical means. Here we develop a means of tracking the paths that dust grains would have taken through a diffusive protoplanetary disk and examine the types and ranges of environments that particles would have seen over a 10{sup 6} yr time period in the dynamic disk. We then combine this model with three annealing laws to examine how the dynamic evolution of amorphous grains would have led to their physical restructuring and their delivery to various regions of the disk. It is found that 'sibling particles' - those particles that reside at the same location at a given period of time-take a wide range of unique and independent paths through the disk to arrive there. While high temperatures can persist in the disk for very long time periods, we find that those grains that are delivered to the cold outer regions of the disk are largely annealed in the first few x10{sup 5} yr of disk history. This suggests that the crystallinity of grains in the outer disk would be determined early and remain unchanged for much of disk history, in agreement with recent astronomical observations.

  1. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    SciTech Connect

    Kashiwar, A.; Vennela, N. Phani; Kamath, S.L.; Khatirkar, R.K.

    2012-12-15

    In the present study, effect of solution annealing temperature (1050 Degree-Sign C and 1100 Degree-Sign C) and isothermal ageing (700 Degree-Sign C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel ({approx} 45% ferrite and {approx} 55% austenite) undergoes a series of metallurgical transformations during ageing-formation of secondary austenite ({gamma}{sub 2}) and precipitation of Cr and Mo rich intermetallic (chi-{chi} and sigma-{sigma}) phases. For solution annealing at 1050 Degree-Sign C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 Degree-Sign C. {chi} Phase precipitated after the precipitation of carbides-preferentially at the ferrite-ferrite and also at the ferrite-austenite boundaries. {sigma} Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 Degree-Sign C was found to be carbides {yields} {chi} {yields} {sigma}. On the contrary, for samples solution annealed at 1100 Degree-Sign C, the precipitation of {chi} phase was negligible. {chi} Phase precipitated before {sigma} phase, preferentially along the ferrite-ferrite grain boundaries and was later consumed in the {sigma} phase precipitation. The {sigma} phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite {gamma}{sub 2} and {sigma} phase in the ferrite and along the ferrite-austenite grain boundaries. An increase in the volume fraction of {gamma}{sub 2} and {sigma} phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights

  2. Effect of Intercritical Annealing on Microstructural Evolution and Properties of Quenched & Partitioned (Q&P) Steels

    NASA Astrophysics Data System (ADS)

    Wu, Riming; Jin, Xuejun; Wang, Chenglin; Wang, Li

    2016-04-01

    Transformation of metastable austenite into martensite in novel quenched & partitioned (Q&P) steels improves sheet formability, allowing this class of high-strength steels to be used for automotive structural components. The current work studies the microstructural evolution by varying intercritical annealing time ( t a), as well as its influence on the martensite-austenite constituent and mechanical properties of Q&P steels. As the t a was prolonged, the morphology of retained austenite progressively transformed from block to a mixture of block and film, and finally changed to totally film. Based on electron back-scatter diffraction (EBSD) measurements and uniaxial tensile response, the holding time of 600 s at 760 °C was determined to produce the best results in terms of highest volume fraction of retained austenite ( f γ = 15.8%) and largest strain (26.8%) at the ultimate tensile strength (892 MPa). This difference in work-hardening behavior corresponds directly to the transformation rate of retained austenite with different morphology. The slower rate of transformation of filmy austenite allowed for work hardening to persist at high strains where the transformation effect had already been exhausted in the blocky one. There is great potential for properties improvement through adjustment of metastability of retained austenite.

  3. The Effect of Hydrogen Annealing and Sulfur Content on the Oxidation Resistance of PWA 1480

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1997-01-01

    For many decades the dramatic effect of trace amounts of reactive elements on alumina and chromia scale adhesion has been recognized and widely studied. Although various theories have been used to account for such behavior, the connection between scale adhesion and sulfur segregation was initially reported by Smeggil et al. This study found strong surface segregation of sulfur from very low levels in the bulk which could then be curtailed by the addition of reactive elements. It was assumed that the reactive elements, which are strong sulfide formers, acted by getting sulfur in the bulk thus precluding sulfur segregation and weakening of the oxide-metal bond. Subsequent studies confirmed that adhesion could be produced by reducing the sulfur impurity level, without reactive elements. The understanding of this phenomenon has been applied to modern single crystal superalloys, where the addition of Y, although very effective, is problematic. Also problematic is definition of the level of sulfur that is acceptable and below which no further adhesion benefit is reached. Published works have indicated a broad transition defined by various materials and oxidation tests. The present study describes the oxidation behavior of one superalloy (PWA 1480) as a function of various sulfur contents produced by hydrogen annealing for various temperatures, times, and sample thicknesses. The purpose is to define more precisely a criterion for adhesion based on total sulfur reservoir and segregation potential.

  4. Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

    SciTech Connect

    Sugano, Ryo; Tashiro, Tomoya; Sekine, Tomohito; Fukuda, Kenjiro; Kumaki, Daisuke; Tokito, Shizuo

    2015-11-15

    We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 10{sup 4}. Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process. The enhanced memory effect is attributed to large polarization effects caused by rearranged ferroelectric polymer chains and improved crystallinity in the organic semiconductor layer of the FeFET devices.

  5. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  6. Annealing effects on the structural and magnetic properties of off-stoichiometric Fe-Mn-Ga ferromagnetic shape memory alloys

    DOE PAGES

    Chen, Yan; Bei, Hongbin; Dela Cruz, Clarina R; Wang, Yandong; An, Ke

    2016-05-07

    Annealing plays an important role in modifying structures and properties of ferromagnetic shape memory alloys (FSMAs). The annealing effect on the structures and magnetic properties of off-stoichiometric Fe45Mn26Ga29 FSMA has been investigated at different elevated temperatures. Rietveld refinements of neutron diffraction patterns display that the formation of the γ phase in Fe45Mn26Ga29 annealed at 1073 K increases the martensitic transformation temperature and reduces the thermal hysteresis in comparison to the homogenized sample. The phase segregation of a Fe-rich cubic phase and a Ga-rich cubic phase occurs at the annealing temperature of 773 K. The atomic occupancies of the alloys aremore » determined thanks to the neutron's capability of differentiating transition metals. The annealing effects at different temperatures introduce a different magnetic characteristic that is associated with distinctive structural changes in the crystal.« less

  7. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    NASA Astrophysics Data System (ADS)

    Yadav, Shriniwas; Kaur, Inderpreet

    2016-04-01

    Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  8. Annealing effects on the microstructure and magnetic domain structures of duplex stainless steel studied by in situ technique

    NASA Astrophysics Data System (ADS)

    Guo, L. Q.; Zhao, X. M.; Li, M.; Zhang, W. J.; Bai, Y.; Qiao, L. J.

    2012-10-01

    The effects of annealing temperature on the microstructure and the magnetic domain structures of duplex stainless steel 2507 were investigated by the magnetic force microscopy (MFM), X-ray diffraction (XRD), and electron backscattered diffraction (EBSD). The MFM and XRD results indicated that the volume fraction of ferrite phase increased with increasing annealing temperature, but the lattice constants kept constant. Moreover, with the rise of annealing temperature, the magnetic domain structure in the ferrite phase varied gradually, where the magnetic domain became thinner and the distribution turned more homogeneous. These results gave a direct evidence for the changes of microstructure and magnetic domain structure induced by the annealing treatment. EBSD analysis showed that the orientation of ferrite grains changed after annealing treatments, which coincided with the changes of the microstructure and the magnetic domain structures.

  9. Effects of pre-annealing on the uni- and bi-axial stretching behavior of poly(ethylene naphthalate) films

    SciTech Connect

    Abe, T. Takarada, W. Kikutani, T.

    2014-05-15

    Effect of pre-annealing on stress and birefringence behavior of poly(ethylene naphthalate) (PEN) films during stretching and relaxation processes was investigated. Amorphous and non-oriented PEN films were pre-annealed under the conditions of different temperatures and periods. The pre-annealed films were stretched uniaxially or equi-biaxially and then relaxed at fixed length. It was found that pre-annealing did not cause any notable change for the initial behavior of refractive indices variation, whereas the behaviors after necking were significantly affected. Through the comparison between in-plane and out-of-plane birefringence and the analysis of wide-angle x-ray diffraction patterns of drawn films of both stretching modes, it was confirmed that the orientation of naphthalene ring in the film plane was enhanced by pre-annealing.

  10. Radiation Induced Optical Absorption of Cubic Lead Fluoride Crystals and the Effect of Annealing

    NASA Astrophysics Data System (ADS)

    Ren, Guo-Hao; Chen, Xiao-Feng; Li, Huan-Ying; Wu, Yun-Tao; Shi, Hong-Sheng; Qin, Lai-Shun

    2014-08-01

    Transparent and colorless lead fluoride crystals with sizes of 20 × 20 × 20 (mm3) are irradiated with several doses of γ-rays from a 60 Co source. Their transmittance spectra before and after irradiation are measured, and a new parameter ΔT = Tb - Ta is defined to evaluate the irradiation damage. Three optical absorption bands peaking at 270 nm, 370 nm and 500 nm are found in the plots of ΔT versus wavelength, and their intensities increase with the irradiation dose. These optical absorption bands, except the one at 270 nm, can recover spontaneously with time. Thermal annealing treatment can enhance this recovery of the transmittance, while the optimum annealing temperature for different samples depends on the irradiation dose.

  11. Annealing plus chemical abrasion: A remarkably effective tool for eliminating the effects of lead loss from volcanic zircons

    NASA Astrophysics Data System (ADS)

    Mundil, R.; Ludwig, K. R.

    2003-12-01

    Understanding short-term events and processes in Earth's history is highly dependent on the precision and accuracy of underlying radio-isotopic ages, provided in many cases by high-precision U/Pb ages of zircons in volcanic ash falls. Although low procedural blanks combined with modern mass spectrometry allow permil-precision ages to be determined on individual zircon crystals, such analytical precision does not necessarily translate into accuracy in a geological sense. Extracting robust ages from complex zircon populations is often compromised by apparent-age scatter arising both from anomalously young ages (a result of Pb loss) and by anomalously old ages (from xenocrystic contamination and/or inheritance). Such complications arise in particular for relatively young rocks (say <300 Ma, where accuracy of the more-robust 207Pb/206Pb ages is unacceptable and even the precision is worse than for 206Pb/238U), wherein reliable U/Pb dating requires the production of a coherent cluster of internally concordant 206Pb/238U ages. Air abrasion (the main "traditional" technique for minimizing Pb loss) as well as leaching the zircons in aggressive reagents (HF or NaOH) have been shown to be only moderately successful in general, as demonstrated by single crystal analyses with excess U/Pb age-scatter. Multi-crystal samples aimed at improving the precision of individual analyses impose the demonstrable likelihood of averaging Pb-loss effects, and thus are prone to yield slightly younger and inaccurate age (Mundil et al., 2001). An approach pioneered and refined by Mattinson (2001), however, dramatically improves the quality of complex zircon populations by entirely eliminating (at least in all of our tests so far) the effects of post-depositional Pb loss, even for zircon populations that are profoundly affected. In the Mattinson procedure, zircons are first annealed at a temperature of 800° C, resulting in crystals devoid of radiation damage. Following annealing, the zircons

  12. Effects of Post-Deposition Annealing on the Properties of Calcium Manganese Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Ferrone, Natalie; Chaudhry, Adeel; Hart, Cacie; Lawson, Bridget; Houston, David; Neubauer, Samuel; Johnson, Anthony; Schaefer, David; Kolagani, Rajeswari

    We will present our results on the effects of post-deposition annealing on the structural and electrical properties of CaMnO3-d thin films grown by Pulsed Laser deposition. The thin films are epitaxially grown on (100) LaAlO3 which has larger in-plane lattice parameters than that of bulk CaMnO3, which leads to bi-axial tensile strain in the thin films. Results from our laboratory show that bi-axial tensile strain leads to low resistivity in thinner films, the resistivity increasing with increasing thickness. These results are suggestive of a coupling between strain and oxygen stoichiometry in the thin films. We have investigated the effects of post-deposition annealing in various gas ambients towards the goal of understanding the effects of relaxation and oxygen stoichiometric changes. We will present a comparison of the structural and electrical properties of as-grown and post-annealed films over a range of thicknesses. Support from Towson University Office of Undergraduate Research, Fisher Endowment Grant & Undergraduate Research Grant from the Fisher College of Science & Mathematics, Seed Funding Grant from the School of Emerging technologies, & NSF Grant ECCS 112856.

  13. Effects of post-annealing and temperature/humidity treatments on the interfacial adhesion energy of the Cu/SiN x interface for Cu interconnects

    NASA Astrophysics Data System (ADS)

    Jeong, Minsu; Bae, Byung-Hyun; Lee, Hyeonchul; Kang, Hee-Oh; Hwang, Wook-Jung; Yang, Jun-Mo; Park, Young-Bae

    2016-06-01

    The effects of 200 °C post-annealing and 85 °C and 85% relative humidity temperature and humidity (T/H) treatments on the interfacial adhesion energy of a Cu/SiN x interface were systematically investigated. The results of a four-point bending test, X-ray photoemission spectroscopy, and high-resolution transmission electron microscopy revealed that the interfacial adhesion energy during T/H treatment decreased with time faster than during annealing treatment, which is closely related to the faster Cu oxidation of SiN x /Cu interfaces.

  14. Effect of roller shapes on strip buckling in a continuous annealing furnace

    NASA Astrophysics Data System (ADS)

    Yang, Jing; Tang, Di; Su, Lan; Jiang, Hai-Tao; Yang, Quan

    2011-06-01

    The effect of roller shapes on strip buckling in a continuous annealing furnace was focused on. The tensile stress distribution, the transverse compressive stress, and the critical buckling stress of the strip were studied by the finite element method (FEM) when the flat roller, crown roller, single taper roller, and double taper roller were used, respectively. Simulation results show that strip buckling is most likely to occur with the crown roller, then the double taper roller, and finally the single taper roller. Also, strip buckling can not occur when the flat roller is used. Considering strip snaking, the single taper roller and double taper roller are suggested in the continuous annealing furnace. The double taper roller with a better strip snaking-prevention ability should be applied in the sections with high strip temperature, and the single taper roller with a better buckling-prevention ability should be used in the sections with low strip temperature.

  15. Effects of oxygen-reducing atmosphere annealing on LaMnO3 epitaxial thin films

    SciTech Connect

    Choi, W. S.; Marton, Zsolt; Jang, S. Y.; Moon, S. J.; Jeon, B. C.; Shin, J. H.; Seo, Sung Seok A; Noh, Tae Won; Myung-Whun, Kim; Lee, Ho Nyung; Lee, Y. S.

    2009-01-01

    We investigated the effects of annealing on LaMnO{sub 3} epitaxial thin films grown by pulsed laser deposition (PLD) and propose an efficient method of characterizing their stoichiometry. Structural, magnetic and optical properties coherently indicate non-stoichiometric ferromagnetic and semiconducting phases for as-grown LaMnO{sub 3} films. By annealing in an oxygen-reducing atmosphere, we recovered the antiferromagnetic and insulating phases of bulk-like stoichiometric LaMnO{sub 3}. We show that non-destructive optical spectroscopy at room temperature is one of the most convenient tools for identifying the phases of LaMnO{sub 3} films. Our results serve as a prerequisite for studying LaMnO{sub 3} based heterostructures grown by PLD.

  16. Effect of acetylation, oxidation and annealing on physicochemical properties of bean starch.

    PubMed

    Simsek, Senay; Ovando-Martínez, Maribel; Whitney, Kristin; Bello-Pérez, Luis A

    2012-10-15

    Black and Pinto bean starches were physically and chemically modified to investigate the effect of modification on digestibility and physicochemical properties of bean starch. The impact of acetylation, oxidation (ozonation) and annealing on the chemical composition, syneresis, swelling volume, pasting, thermal properties and digestibility of starches was evaluated. The physicochemical and estimated glycemic index (eGI) of the Black and Pinto bean starches treated with ozone were not significantly (P>0.05) different than that of their respective control starches. Annealed starches had improved thermal and pasting properties compared to native starches. Acetylated starches presented reduced syneresis, good pasting properties and lower eGI. Also, all modified starches had increased levels of resistant starch (RS). Therefore, the digestibility and physicochemical properties of bean starch were affected by the type of modification but there were no significant (P>0.05) differences between the Black and Pinto bean starches.

  17. Effects of annealing on structure and composition of LSMO thin films

    NASA Astrophysics Data System (ADS)

    Xie, Haipeng; Huang, Han; Cao, Ningtong; Zhou, Conghua; Niu, Dongmei; Gao, Yongli

    2015-11-01

    The effects of annealing on structure and composition of LSMO thin films grown by the means of DC magnetron sputtering have been investigated with the assistance of X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoemission spectroscopy (XPS). The first LSMO-related diffraction peak (A) appears on the sample prepared at 1023 K and shifts toward low-angle direction at higher temperature. A new diffraction peak (B) related to LaMnOx is observed on the sample prepared at 1073 K that becomes stronger with increasing annealing temperature. AFM images display the corresponding morphology evolutions. XPS results reveal that LaMnOx is formed due to strontium segregation on the LSMO surface at a temperature higher than 1023 K. Meanwhile, we find that a new ingredient appears from 973 to 1023 K and disappears from 1073 K to 1123 K, which is predicted to exist as semiconductor or insulator on the surface.

  18. Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

    SciTech Connect

    Kalygina, V. M. Vishnikina, V. V.; Zarubin, A. N.; Novikov, V. A.; Petrova, Yu. S.; Tolbanov, O. P.; Tyazhev, A. V.; Tcupiy, S. Y.; Yaskevich, T. M.

    2013-08-15

    The effect of the annealing temperature on the I-V, C-I, and G-V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga{sub 2}O{sub 3} powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures T{sub an} {>=} 800 Degree-Sign C. The electrical characteristics and photoresponse of the V/Ni-GaAs-GaAs-Ga{sub x}O{sub y}-V/Ni samples to visible radiation depend on the structure and phase composition of the films.

  19. Radiation effects on MOS devices - dosimetry, annealing, irradiation sequence, and sources

    NASA Technical Reports Server (NTRS)

    Stassinopoulos, E. G.; Brucker, G. J.; Van Gunten, O.; Knudson, A. R.; Jordan, T. M.

    1983-01-01

    This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.

  20. Effect of proton irradiation and annealing on the critical current density in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals

    SciTech Connect

    Viswanathan, H.K. |; Kirk, P.; Baldo, P.; Welp, U.; Crabtree, G.W.; Lee, W.C.; Giapintzakis, J. |

    1994-01-01

    We have studied the effect of annealing up to 350{degrees}C on the critical current densities in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals that were irradiated with 3.5 MeV protons to a fluence of 1 {times} 10{sup 16} p+/cm{sup 2}. Large enhancements in the critical current densities, determined from DC-magnetization measurements, were observed immediately after irradiation at all temperatures for magnetic field orientations both parallel and perpendicular to the c-axis. These crystals were then annealed at room temperature, 100, 200, 300, and 350{degrees}C, and the critical current densities were determined after each annealing step. The annealing above room temperature resulted in a reduction of the critical current densities for both directions of the magnetic field. The transition temperatures, determined from low field DC-magnetization measurements at each stage of the measurement sequence, decreased by about 0.5 K following the irradiation and recovered to their original value after annealing at higher temperatures. We propose a defect model to explain the observed pining and its anisotropy observed in this work and earlier work on electron and neutron irradiated YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals.

  1. Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for Silicon Surface Passivation.

    PubMed

    Balaji, Nagarajan; Park, Cheolmin; Chung, Sungyoun; Ju, Minkyu; Raja, Jayapal; Yi, Junsin

    2016-05-01

    High quality surface passivation has gained a significant importance in photovoltaic industry for reducing the surface recombination and hence fabricating low cost and high efficiency solar cells using thinner wafers. The formation of good-quality SiO2 films and SiO2/Si interfaces at low processing temperatures is a prerequisite for improving the conversion efficiency of industrial solar cells with better passivation. High-temperature annealing in inert ambient is promising to improve the SiO2/Si interface. However, annealing treatments could cause negative effects on SiO2/Si interfaces due to its chemical at high temperatures. Low temperature post oxidation annealing has been carried out to investigate the structural and interface properties of Si-SiO2 system. Quasi Steady State Photo Conductance measurements shows a promising effective carrier lifetime of 420 μs, surface recombination velocity of 22 cm/s and a low interface trap density (D(it)) of 4 x 10(11) states/cm2/eV after annealing. The fixed oxide charge density was reduced to 1 x 10(11)/cm2 due to the annealing at 500 degrees C. The FWHM and the Si-O peak wavenumber corresponding to the samples annealed at 500 degrees C reveals that the Si dangling bonds in the SiO2 films due to the oxygen defects was reduced by the low temperature post oxidation annealing. PMID:27483822

  2. Effect of thermal annealing on structural and optical properties of In2S3 thin films

    NASA Astrophysics Data System (ADS)

    Choudhary, Sonu

    2015-08-01

    There is a highly need of an alternate of toxic materials CdS for solar cell applications and indium sulfide is found the most suitable candidate to replace CdS due to its non-toxic and environmental friendly nature. In this paper, the effect of thermal annealing on the structural and optical properties of indium sulfide (In2S3) thin films is undertaken. The indium sulfide thin films of 121 nm were deposited on glass substrates employing thermal evaporation method. The films were subjected to the X-ray diffractometer and UV-Vis spectrophotometer respectively for structural and optical analysis. The XRD pattern show that the as-deposited thin film was amorphous in nature and crystallinity is found to be varied with annealing temperature. The optical analysis reveals that the optical band gap is varied with annealing. The optical parameters like absorption coefficient, extinction coefficient and refractive index were calculated. The results are in good agreement with available literature.

  3. The Effect of Solution Annealing on the Microstructural Behavior of Alloy 22 Welds

    SciTech Connect

    El-Dasher, B S; Edgecumbe, T S; Torres, S G

    2005-05-06

    Multi-pass gas tungsten arc welds of Alloy 22 were subjected to solution annealing durations of 20 minutes, 24 hours, 72 hours and 1 week at temperatures of 1075, 1121, 1200, and 1300 C. The specimens were studied in cross section by secondary electron microscopy to determine the effect of solution annealing on tetrahedrally close packed (TCP) precipitate stability. Electron backscatter diffraction mapping was also performed on all of the specimens to determine the recrystallization behavior of the welds. It was found that complete TCP precipitate dissolution occurs after solution annealing at 1075 C and 1121 C for 24 hours, and at 1200 C and 1300 C for durations of 20 minutes. Regions of most rapid recrystallization were correlated to the regions of lowest solute content and highest residual tensile stresses. Texture analysis indicated that while the columnar dendrites originally present in the weld grew with a <001> orientation in the transverse direction (opposite the heat flow direction), the recrystallized grains adopt a <101> orientation in the transverse direction when recrystallization and TCP phase dissolution occur simultaneously.

  4. Annealing effect on thermodynamic and physical properties of mesoporous silicon: A simulation and nitrogen sorption study

    NASA Astrophysics Data System (ADS)

    Kumar, Pushpendra; Huber, Patrick

    2016-04-01

    Discovery of porous silicon formation in silicon substrate in 1956 while electro-polishing crystalline Si in hydrofluoric acid (HF), has triggered large scale investigations of porous silicon formation and their changes in physical and chemical properties with thermal and chemical treatment. A nitrogen sorption study is used to investigate the effect of thermal annealing on electrochemically etched mesoporous silicon (PS). The PS was thermally annealed from 200˚C to 800˚C for 1 hr in the presence of air. It was shown that the pore diameter and porosity of PS vary with annealing temperature. The experimentally obtained adsorption / desorption isotherms show hysteresis typical for capillary condensation in porous materials. A simulation study based on Saam and Cole model was performed and compared with experimentally observed sorption isotherms to study the physics behind of hysteresis formation. We discuss the shape of the hysteresis loops in the framework of the morphology of the layers. The different behavior of adsorption and desorption of nitrogen in PS with pore diameter was discussed in terms of concave menisci formation inside the pore space, which was shown to related with the induced pressure in varying the pore diameter from 7.2 nm to 3.4 nm.

  5. Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films

    NASA Astrophysics Data System (ADS)

    Chen, Yin-Yu; Chao, Der-Sheng; Tsai, Hsu-Sheng; Liang, Jenq-Horng

    2016-04-01

    The mechanisms of photoluminescence (PL) originating from Si+/C+ implanted SiO2 are still unclear and need to be clarified. Thus, the purpose of this study is to thoroughly investigate the effects of ion implantation and post-annealing temperature on microstructures and PL characteristics of the Si+/C+ implanted SiO2 films. A comparative analysis was also conducted to clarify the different optical properties between the Si+ and Si+/C+ implanted SiO2 films. In this study, thermally-grown SiO2 films on Si substrates were used as the matrix materials. The Si+ ions and C+ ions were separately implanted into the SiO2 films at room temperature. After ion implantation, the post-annealing treatments were carried out using the furnace annealing (FA) method at various temperatures (600-1100 °C) for 1 h in a N2 ambient. The PL characteristics of the implanted SiO2 films were analyzed using a fluorescence spectrophotometer. The results revealed that the distinct PL peaks were observed at approximately 310, 450 and 650 nm in the Si+-implanted SiO2 films, which can be attributed to the defects, the so-called oxygen deficiency centers (ODCs) and non-bridging oxygen hole centers (NBOHCs), in the materials. In contrast to the Si+ ion implantation, the SiO2 films which were sequentially implanted with Si+ and C+ ions and annealed at 1100 °C can emit white light corresponding to the PL peaks located at around 420, 520 and 720 nm, those can be assigned to the Si-C bonding, C-C graphite-like structure (sp2), and Si nanocrystals, respectively. Moreover, a correlation between the optical properties, microstructures, and bonding configurations of the Si+/C+ implanted SiO2 films was also established in this study.

  6. Effects of ultra-fast solvent evaporation in solvent vapor annealed cylinder-forming block polymer thin films

    NASA Astrophysics Data System (ADS)

    Baruth, A.; Nelson, G.; Drapes, C.; Wong, J.; Grant, M.

    Despite continued advances in directed self-assembly of block polymer thin films viasolvent vapor annealing, a standardized process remains absent. There remain several complicating factors, notably solvent evaporation rate. Recent theoretical models point to this rate dominating the propagation of a given morphology into the bulk of a thin film following nucleation from the free surface. During this drying process, the film undergoes a competition between thermodynamically driven phase separation and kinetically controlled chain mobility. We, among others, have demonstrated that faster solvent removal can enhance propagation down to the substrate. Perpendicularly aligned cylinders are one illustrative example. To further quantify this effect, and look at ultra-fast time scales, we have constructed a solvent vapor annealing chamber that computer-controls evaporation times down to 15 ms. In situ spectral reflectance, with 10 ms temporal resolution, monitors the swelling and evaporation. We will present results on cylinder-forming polystyrene-block-polylactide thin films swollen to near disorder with tetrahydrofuran, followed by immediate solvent evaporation. Our data reveals control over evaporation times, ranging from 15 ms to several seconds, and the discovery of various evaporation types, previously undetected, including linear, exponential and combinations. Furthermore, atomic force micrographs correlate surface morphologies (both free and substrate) of the resultant films with each evaporation condition. Funded by Nebraska EPSCoR.

  7. Crystallization of amorphous indomethacin during dissolution: effect of processing and annealing.

    PubMed

    Greco, Kristyn; Bogner, Robin

    2010-10-01

    The crystallization of amorphous drugs during dissolution is a type of solution mediated phase transformation that can reduce the bioavailability enhancement one hoped to gain from the amorphous state. The goal of this study was to explore the effects of processing on the dissolution performance of amorphous indomethacin. The amorphous solids were prepared by four techniques, quench cooling the melted solid, cryogrinding γ indomethacin amorphous for 1 or 3 h and quench cooling the solid followed by 1 h of cryogrinding. Dissolution results assessed in a flow-through intrinsic dissolution apparatus reveal decreases in the dissolution rate of amorphous indomethacin during the experimental time frame indicating that a solution mediated phase transformation has occurred. The amorphous solids prepared by melt quenching and melt quenching followed by cryogrinding showed a significant dissolution rate advantage over the γ form of indomethacin. In contrast, indomethacin that was cryoground amorphous for 1 or 3 h did not show any dissolution rate advantage over the crystalline material. Transformation was confirmed by in situ Raman microscopy and polarized light microscopy with differences seen in the nature of the crystals apparent on the surface of the dissolving solid. A portion of the melt quenched amorphous sample was annealed at 25 °C and 0% relative humidity to induce partial crystallization of γ indomethacin. As crystallinity increased, the dissolution rate decreased. The transformation time of partially amorphous indomethacin was not dependent on the level of crystallinity present, indicating only a small fraction of crystalline material needs to be present to affect the kinetics of crystallization. The solution mediated phase transformation of amorphous indomethacin is affected by the processing method even though all solids were confirmed amorphous by polarized light microscopy and X-ray diffraction. Dissolution may distinguish differences in amorphous solids

  8. Effects of Hydrogen Annealing, Sulfur Segregation and Diffusion on the Cyclic Oxidation Resistance of Superalloys: a Review

    NASA Technical Reports Server (NTRS)

    Smialek, J. L.; Jayne, D. T.; Schaeffer, J. C.; Murphy, W. H.

    1994-01-01

    This review is based on the phenomenon of improved oxide scale adhesion for desulfurized superalloys. The proposed adhesion mechanism involves sulfur interfacial segregation and scale-metal bond weakening. Sulfur surface segregation on superalloys is examined as a function of temperature and sulfur content and related to classical behavior predicted by the McLean isotherm. Effective desulfurization to less than 1 ppmw can be accomplished by hydrogen annealing and is governed by sulfur diffusion kinetics in nickel. Hydrogen annealing results in excellent cyclic oxidation resistance for a number of advanced superalloys. The concept of a critical sulfur content is discussed in terms of practical annealing conditions and section thicknesses.

  9. Effects of hydrogen annealing, sulfur segregation and diffusion on the cyclic oxidation resistance of superalloys: A review

    NASA Technical Reports Server (NTRS)

    Smialek, J. L.; Jayne, D. T.; Schaeffer, J. C.; Murphy, W. H.

    1994-01-01

    This review is based on the phenomenon of improved oxide scale adhesion for desulfurized superalloys. The proposed adhesion mechanism involves sulfur interfacial segregation and scale-metal bond weakening. Sulfur surface segregation on superalloys is examined as a function of temperature and sulfur content, and is related to the classical behavior predicted by the McLean isotherm. Effective desulfurization to less than 1 ppmw can be accomplished by hydrogen annealing and is described by sulfur diffusion kinetics in nickel. Hydrogen annealing results in excellent cyclic oxidation resistance for a number of advanced superalloys. The concept of a critical sulfur content is discussed in terms of practical annealing conditions and section thicknesses.

  10. Microstructure change during oxygen annealing and the effect on the levitation force of melt-textured Y - Ba - Cu - O superconductors

    NASA Astrophysics Data System (ADS)

    Kim, Chan-Joong; Kim, Ki-Baik; Kuk, Il-Hyun; Hong, Gye-Won; Lee, Yi-Sung; Park, Hyun-Soon

    1997-12-01

    The influence of oxygen annealing on the levitation force was studied for melt-textured multidomain YBCO samples cooled with and without magnetic field (field cooled (FC) and zero-field cooled (ZFC)). For both the FC and ZFC samples the repulsive force rapidly increased with increasing oxygen annealing time, reaching a maximum value at a certain annealing time and then slightly decreasing when the samples were further annealed. The attractive force of the FC samples followed a similar pattern to that of the repulsive force while the attractive force of the ZFC samples was small and nearly constant regardless of annealing time. The variation of the levitation force with oxygen annealing time is explained in terms of the microstructure developed during oxygen annealing.

  11. The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

    SciTech Connect

    Orak, İ.; Ejderha, K.; Sönmez, E.; Alanyalıoğlu, M.; Turut, A.

    2015-01-15

    The Co/n-GaP nano-Schottky diodes have been fabricated to investigate effect of annealing temperature on the characteristics of the device. DC Magnetron sputtering technique has been used for Co metallic contact. The samples have been annealed for three minutes at 400 °C and 600 °C. XRD analyzes of the devices subjected to thermal annealing process have been investigated. Surface images have been taken with atomic force microscopy (AFM) in order to examine the morphology of the surface of the metal layer before and after the annealing the sample. The current–voltage (I–V) measurements taken at room temperature have shown that the ideality factor and series resistance decrease with the increasing annealing temperature. The ideality factor was found to be 1.02 for sample annealed at 400 °C. Before and after annealing, depending on the temperature measurement, the capacitance–frequency (C–f), and conductance–frequency (G–f) have been measured, and graphs have been plotted.

  12. Study on effect of annealing conditions on structural, magnetic and superconducting properties of MgB{sub 2} bulk samples

    SciTech Connect

    Phaneendra, Konduru Asokan, K. Kanjilal, D.; Awana, V. P. S.; Sastry, S. Sreehari

    2014-04-24

    Effect of annealing conditions on structural, magnetic and superconducting properties of Magnesium Diboride (MgB{sub 2}) bulk superconductor samples prepared by solid state route method are compared. The samples are made by taking Magnesium and Boron powders in stoichiometric ratio, grounded well and pelletized at pressure of about 10Tonnes. These pellets are annealed in both Argon and vacuum environment separately up to 800°c for two hours. Both the samples show clear superconducting transition at Tc ∼ 38 k. This is further conformed by AC/DC magnetization (M-T), Resistivity [ρ (T, H)] measurements under magnetic field up to 14 Tesla as well. Rietveld refinement of X-ray diffraction of both samples conformed the MgB{sub 2} phase formation with P6/mmm space group symmetry. Scanning Electron Microscopy images of the surface revile more agglomeration of grains in case of Argon annealed samples. This result in more critical current density (J{sub c}) of Argon annealed samples than vacuum annealed one calculated from Bean's critical state model. This high Jc is explained in terms of more inter grain connectivity for Argon annealed sample than vacuum annealed sample.

  13. Effect of air annealing on structural, optical, morphological and electrical properties of thermally evaporated CdSe thin films

    NASA Astrophysics Data System (ADS)

    Purohit, A.; Chander, S.; Nehra, S. P.; Dhaka, M. S.

    2015-05-01

    In this paper, a study on effect of air annealing on structural, optical, morphological and electrical properties of CdSe thin films is undertaken. The thin films of thickness 810 nm were deposited on glass and ITO coated glass substrates employing thermal evaporation technique. The glass substrates were used to find structural, optical and morphological properties while ITO coated glass substrates for electrical properties. The as-deposited films were subjected to thermal annealing in air atmosphere at different temperatures 100 °C, 200 °C and 300 °C. The X-ray diffraction pattern shows that the films have cubic phase with preferred orientation (111). The structural parameters like inter-planner spacing, lattice constant, grain size, dislocation density, strain and number of crystallites per unit area are calculated. The grain size is found in the range 27.11-34.03 nm and observed to be varied with air annealing. The dislocation density and strain vary with annealing in the range (0.86-1.36)×1011 cm-2 and 0.276-0.347 respectively. The extinction coefficient is found to be increased at lower annealing temperature and decreased at higher. The refractive index is also calculated and found in the range 2.75-2.80. The AFM studies show that roughness of thin films are increased with annealing. The electrical resistivity is found to be decreased with annealing temperature. The results are in good agreement with the standard data and available literature.

  14. Study on effect of annealing conditions on structural, magnetic and superconducting properties of MgB2 bulk samples

    NASA Astrophysics Data System (ADS)

    Phaneendra, Konduru; Asokan, K.; Awana, V. P. S.; Sastry, S. Sreehari; Kanjilal, D.

    2014-04-01

    Effect of annealing conditions on structural, magnetic and superconducting properties of Magnesium Diboride (MgB2) bulk superconductor samples prepared by solid state route method are compared. The samples are made by taking Magnesium and Boron powders in stoichiometric ratio, grounded well and pelletized at pressure of about 10Tonnes. These pellets are annealed in both Argon and vacuum environment separately up to 800°c for two hours. Both the samples show clear superconducting transition at Tc ˜ 38 k. This is further conformed by AC/DC magnetization (M-T), Resistivity [ρ (T, H)] measurements under magnetic field up to 14 Tesla as well. Rietveld refinement of X-ray diffraction of both samples conformed the MgB2 phase formation with P6/mmm space group symmetry. Scanning Electron Microscopy images of the surface revile more agglomeration of grains in case of Argon annealed samples. This result in more critical current density (Jc) of Argon annealed samples than vacuum annealed one calculated from Bean's critical state model. This high Jc is explained in terms of more inter grain connectivity for Argon annealed sample than vacuum annealed sample.

  15. Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

    NASA Astrophysics Data System (ADS)

    Jia, Yifan; Lv, Hongliang; Niu, Yingxi; Li, Ling; Song, Qingwen; Tang, Xiaoyan; Li, Chengzhan; Zhao, Yanli; Xiao, Li; Wang, Liangyong; Tang, Guangming; Zhang, Yimen; Zhang, Yuming

    2016-09-01

    The effect of nitric oxide (NO) annealing on charge traps in the oxide insulator and transition layer in n-type 4H–SiC metal–oxide–semiconductor (MOS) devices has been investigated using the time-dependent bias stress (TDBS), capacitance–voltage (C–V), and secondary ion mass spectroscopy (SIMS). It is revealed that two main categories of charge traps, near interface oxide traps (Nniot) and oxide traps (Not), have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples. The Nniot are mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics, which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor. However, Not is mainly responsible for the TDBS induced C–V shifts. Electrons tunneling into the Not are hardly released quickly when suffering TDBS, resulting in the problem of the threshold voltage stability. Compared with the Ar-annealed sample, Nniot can be significantly suppressed by the NO annealing, but there is little improvement of Not. SIMS results demonstrate that the Nniot are distributed within the transition layer, which correlated with the existence of the excess silicon. During the NO annealing process, the excess Si atoms incorporate into nitrogen in the transition layer, allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot. Project supported by the National Natural Science Foundation of China (Grant Nos. 61404098 and 61274079), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), the National Grid Science & Technology Project, China (Grant No. SGRI-WD-71-14-018), and the Key Specific Project in the National Science & Technology Program, China (Grant Nos. 2013ZX02305002-002 and 2015CB759600).

  16. Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Jia, Yifan; Lv, Hongliang; Niu, Yingxi; Li, Ling; Song, Qingwen; Tang, Xiaoyan; Li, Chengzhan; Zhao, Yanli; Xiao, Li; Wang, Liangyong; Tang, Guangming; Zhang, Yimen; Zhang, Yuming

    2016-09-01

    The effect of nitric oxide (NO) annealing on charge traps in the oxide insulator and transition layer in n-type 4H-SiC metal-oxide-semiconductor (MOS) devices has been investigated using the time-dependent bias stress (TDBS), capacitance-voltage (C-V), and secondary ion mass spectroscopy (SIMS). It is revealed that two main categories of charge traps, near interface oxide traps (Nniot) and oxide traps (Not), have different responses to the TDBS and C-V characteristics in NO-annealed and Ar-annealed samples. The Nniot are mainly responsible for the hysteresis occurring in the bidirectional C-V characteristics, which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor. However, Not is mainly responsible for the TDBS induced C-V shifts. Electrons tunneling into the Not are hardly released quickly when suffering TDBS, resulting in the problem of the threshold voltage stability. Compared with the Ar-annealed sample, Nniot can be significantly suppressed by the NO annealing, but there is little improvement of Not. SIMS results demonstrate that the Nniot are distributed within the transition layer, which correlated with the existence of the excess silicon. During the NO annealing process, the excess Si atoms incorporate into nitrogen in the transition layer, allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot. Project supported by the National Natural Science Foundation of China (Grant Nos. 61404098 and 61274079), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), the National Grid Science & Technology Project, China (Grant No. SGRI-WD-71-14-018), and the Key Specific Project in the National Science & Technology Program, China (Grant Nos. 2013ZX02305002-002 and 2015CB759600).

  17. Estimation of effective temperatures in a quantum annealer: Towards deep learning applications

    NASA Astrophysics Data System (ADS)

    Realpe-Gómez, John; Benedetti, Marcello; Perdomo-Ortiz, Alejandro

    Sampling is at the core of deep learning and more general machine learning applications; an increase in its efficiency would have a significant impact across several domains. Recently, quantum annealers have been proposed as a potential candidate to speed up these tasks, but several limitations still bar them from being used effectively. One of the main limitations, and the focus of this work, is that using the device's experimentally accessible temperature as a reference for sampling purposes leads to very poor correlation with the Boltzmann distribution it is programmed to sample from. Based on quantum dynamical arguments, one can expect that if the device indeed happens to be sampling from a Boltzmann-like distribution, it will correspond to one with an instance-dependent effective temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling processes. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the quantum-assisted training of Boltzmann machines, which can serve as a building block for deep learning architectures. This work was supported by NASA Ames Research Center.

  18. Effect of air annealing on structural and magnetic properties of Ni/NiO nanoparticles

    NASA Astrophysics Data System (ADS)

    Nadeem, K.; Ullah, Asmat; Mushtaq, M.; Kamran, M.; Hussain, S. S.; Mumtaz, M.

    2016-11-01

    We reported systematic study on structural and magnetic properties of nickel/nickel oxide (Ni/NiO) nanoparticles annealed under air atmosphere at different temperatures in the range 400-800 °C. The XRD spectra revealed two phases such as Ni and NiO. The average crystallite size increases with increasing annealing temperature. A phase diagram was developed between two phases versus annealing temperature using XRD analysis. At lower annealing temperatures, Ni phase is dominant which does not easily undergo oxidation to form NiO. The NiO phase increases with increasing annealing temperature. FTIR spectroscopy revealed an increase in the NiO phase content at higher annealing temperature, which is in agreement with the XRD analysis. SEM images showed that nanoparticles are well separated at lower annealing temperatures but get agglomerated at higher annealing temperatures. The ferromagnetic (FM) Ni phase content and saturation magnetization (Ms) showed nearly the same trend with increasing annealing temperature. The nanoparticles annealed at 500 °C and 800 °C revealed highest and lowest Ms values, respectively, which is in accordance with the XRD phase diagram. Coercivity showed an overall decreasing trend with increasing annealing temperature due to decreased concentration of FM Ni phase and increasing average crystallite size. All these measurements indicate that the structural and magnetic properties of Ni/NiO nanoparticles are strongly influenced by the annealing temperature.

  19. Effects of thermal annealing on the properties of niobium nitride thin films

    NASA Astrophysics Data System (ADS)

    Hotovy, I.; Srnanek, R.; Buc, D.

    1994-08-01

    The effects of the partial pressure of nitrogen an of the annealing temperature on the properties of NbN films are examined in order to use these films for Schottky contacts on GaAs. Through a thermally oxidized silicon and glass slides by a laboratory-made d.c. magnetron sputtering source with an Nb target approximately 5 cm in diameter and 0.64 cm in thickness and nominally 99.9% pure, the NbN films were deposited.

  20. Microwave annealing

    NASA Astrophysics Data System (ADS)

    Lee, Yao-Jen; Cho, T.-C.; Chuang, S.-S.; Hsueh, F.-K.; Lu, Y.-L.; Sung, P.-J.; Chen, S.-J.; Lo, C.-H.; Lai, C.-H.; Current, Michael I.; Tseng, T.-Y.; Chao, T.-S.; Yang, F.-L.

    2012-11-01

    Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Comparisons between MWA and RTA of dopants in implanted Si has been investigated to produce highly activated junctions. First, As, 31P, and BF 2 implants in Si substrate were annealed by MWA at temperatures below 550 °C.

  1. Effect of annealing temperature on the morphology and optical properties of PMMA films by spin-coating method

    NASA Astrophysics Data System (ADS)

    Aadila, A.; Afaah, A. N.; Asib, N. A. M.; Mohamed, R.; Rusop, M.; Khusaimi, Z.

    2016-07-01

    Poly(methyl methacrylate) (PMMA) films were deposited on glass substrate by sol-gel spin-coating method. The films were annealed for 10 minutes in furnace at different annealing temperature of room temperature, 50, 100, 150 and 200 °C. The effect of annealing temperatures to the surface and optical properties of PMMA films spin-coated on the substrate were investigated by Atomic Force Microscope (AFM) and Ultraviolet-Visible (UV-Vis) Spectroscopy. It was observed in AFM analysis all the annealed films show excellent smooth surface with zero roughness. All the samples demonstrate a high transmittance of 80% in UV region as shown in UV-Vis measurement. Highly transparent films indicate the films are good optical properties and could be applied in various optical applications and also in non-linear optics.

  2. Preparation of silver thin films, and the study of the annealing effects on their structures and optical properties

    NASA Astrophysics Data System (ADS)

    Samavat, F.; Jafari Rahman, J.

    2015-12-01

    In this study, using an electron beam, silver thin films with a thickness of about 120 Å were coated on white glass with thickness of (1 mm) by electron beam irradiation method, and the effects of annealing temperature on the morphology and optical properties of the thin films were investigated. The silver films were annealed at the temperature of 550, 625, 700, 775 and 850 K in the presence of air; in addition, a single sample that had undergone no annealing has also been provided for further comparisons. Their physical and morphological properties were analyzed using the spectroscopy of Ultra-Violet and Visible (UV-vis), x-ray radiation (XRD) and the SEM and AFM methods. The results obtained from this study show that by increasing the annealing temperature of the nanoparticles, the size of the mentioned particles has also increased.

  3. Effects of Iodine Annealing on Fe1+yTe0.6Se0.4

    NASA Astrophysics Data System (ADS)

    Chen, Jingting; Sun, Yue; Yamada, Tatsuhiro; Pyon, Sunseng; Tamegai, Tsuyoshi

    2016-10-01

    Effects of iodine annealing to induce bulk superconductivity in Fe1+yTe0.6Se0.4 have been systematically studied by changing the molar ratio of iodine to the sample and annealing temperature. The optimal condition to induce bulk superconductivity with Tc ˜ 14.5 K and self-field Jc (2 K) ˜ 5 × 105 A/cm2 is found to be a molar ratio of iodine of 5-7% at the annealing temperature of 400 °C. Furthermore, the fact that no compounds containing iodine are detected in the crystal and a significant amount of FeTe2 is produced after the iodine annealing strongly indicate that the excess iron is consumed to form FeTe2 and iodine works as a catalyst in this process.

  4. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  5. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    SciTech Connect

    Schwarze, G.E.; Frasca, A.J.

    1994-09-01

    The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10{sup 13} n/cm {sup 2} and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  6. Real-Time observation of PS-PDMS block copolymer self-assembly under solvent vapor annealing

    NASA Astrophysics Data System (ADS)

    Bai, Wubin; Yager, Kevin; Ross, Caroline

    2015-03-01

    Solvent annealing provides a convenient way to produce microphase separation in films of block copolymers, but the morphology transition of the film during the solvent absorption, equilibrium solvent-BCP concentration and solvent desorption process are not well known. An in situ study of solvent annealing of polystyrene-block-polydimethylsiloxane (PS-PDMS, 16 kg/mol, fPDMS = 30%, period 17 nm) diblock copolymer was carried by synchrotron grazing-incidence small-angle X-ray scattering (GISAXS). The swollen film morphology was found to be strongly dependent on swelling ratio. A transition from the disordered state to a highly ordered state which contained multiple layers of in-plane cylinders was observed at a swelling ratio around 1.45 from samples with 100nm to 1000nm as-cast thickness. The rate of solvent absorption was found to be less important to the dried morphology, while the time of equilibrium solvent-BCP concentration stage was found to influence the orientation of self-assembled microdomains and the drying rate was found to affect the degree of structure deformation. The implications of the results to pattern generation for block copolymer directed self-assembly will be discussed. Semiconductor Research Corporation, National Science Foundation.

  7. Evolution of Self-Assembled Au NPs by Controlling Annealing Temperature and Dwelling Time on Sapphire (0001).

    PubMed

    Lee, Jihoon; Pandey, Puran; Sui, Mao; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar

    2015-12-01

    Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C.

  8. Evolution of Self-Assembled Au NPs by Controlling Annealing Temperature and Dwelling Time on Sapphire (0001).

    PubMed

    Lee, Jihoon; Pandey, Puran; Sui, Mao; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar

    2015-12-01

    Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C. PMID:26704710

  9. Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wang, Aiji; Chen, Tingfang; Lu, Shuhua; Wu, Zhenglong; Li, Yongliang; Chen, He; Wang, Yinshu

    2015-02-01

    Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue-shifting of the UV emission which is sensitive to annealing atmosphere. Al doping induces the film growing with its c-axis parallel to the substrate surface. It also introduces non-radiative centers and weakens the UV emission. Al doping widens the film bandgap, which has a quadratic dependence on Al content. Al doping decreases the film resistivity to 5.3 × 10-3 Ω · cm. Annealing has little effect on photoluminescence of the doped films, but it degrades undoped and doped ZnO film conductivity dramatically; and the degradation depends on the annealing ambient.

  10. Irradiate-anneal screening of total dose effects in semiconductor devices. [radiation hardening of spacecraft components of Mariner spacecraft

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.; Price, W. E.

    1976-01-01

    An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

  11. No adverse effects of submelt-annealed highly crosslinked polyethylene in cemented cups

    PubMed Central

    2012-01-01

    Background and purpose Highly crosslinked polyethylene (PE) is in standard use worldwide. Differences in the crosslinking procedure may affect the clinical performance. Experimenatal data from retrieved cups have shown free radicals and excessive wear of annealed highly crosslinked PE. We have previously reported low wear and good clinical performance after 6 years with this implant, and now report on the 10-year results. Patients and methods In 8 patients, we measured wear of annealed highly crosslinked PE prospectively with radiostereometry after 10 years. Activity was assessed by UCLA activity score and a specifically designed activity score. Conventional radiographs were evaluated for osteolysis and clinical outcome by the Harris hip score (HHS). Results The mean (95% CI) proximal head penetration for highly crosslinked PE after 10 years was 0.07 (–0.015 to 0.153) mm, and the 3D wear was 0.2 (0.026 to 0.36) mm. Without creep, proximal head penetration was 0.02 (–0.026 to 0.066) mm and for 3D penetration was 0.016 (–0.47 to 0.08) mm. This represents an annual proximal wear of less than 2 µm. All cups were clinically and radiographically stable but showed a tendency of increased rotation after 5 years. Interpretation Wear for annealed highly crosslinked PE is extremely low up to 10 years. Free radicals do not affect mechanical performance or lead to clinically adverse effects. Creep stops after the first 6 months after implantation. Highly crosslinked PE is a true competitor of hard-on-hard bearings. PMID:22248172

  12. Effects of Hydrogen in the Annealing Environment on Photoluminescence from Si Nanoparticles in SiO(2)

    SciTech Connect

    Barbour, J.C.; Budai, J.D.; Hembree, D.M.; Meldrum, A.; White, C.W.; Withrow, S.P.

    1999-03-23

    The role of hydrogen in enhancing the photoluminescence (PL) yield observed from Si nanocrystals embedded in SiO{sub 2} has been studied. SiO{sub 2} thermal oxides and bulk fused silica samples have been implanted with Si and subsequently annealed in various ambients including hydrogen or deuterium forming gases (Ar+4%H{sub 2} or Ar+4%D{sub 2}) or pure Ar. Results are presented for annealing at temperatures between 200 and 1100 C. Depth and concentration profiles of H and D at various stages of processing have been measured using elastic recoil detection. Hydrogen or deuterium is observed in the bulk after annealing in forming gas but not after high temperature (1100 C) anneals in Ar. The presence of hydrogen dramatically increases the broad PL band centered in the near-infrared after annealing at 1100 C but has almost no effect on the PL spectral distribution. Hydrogen is found to selectively trap in the region where Si nanocrystals are formed, consistent with a model of H passivating surface states at the Si/SiO{sub 2} interface that leads to enhanced PL. The thermal stability of the trapped H and the PL yield observed after a high temperature anneal have been studied. The hydrogen concentration and PL yield are unchanged for subsequent anneals up to 400 C. However, above 400 C the PL decreases and a more complicated H chemistry is evident. Similar concentrations of H or D are trapped after annealing in H{sub 2} or D{sub 2} forming gas; however, no differences in the PL yield or spectral distribution are observed, indicating that the electronic transitions resulting in luminescence are not dependent on the mass of the hydrogen species.

  13. Effects of Pnictogen Atmosphere Annealing on Fe1+yTe0.6Se0.4

    NASA Astrophysics Data System (ADS)

    Yamada, Tatsuhiro; Sun, Yue; Pyon, Sunseng; Tamegai, Tsuyoshi

    2016-02-01

    It has been clarified that bulk superconductivity in Fe1+yTe0.6Se0.4 can be induced by annealing in an appropriate atmosphere to remove the harmful effects of excess iron. In order to clarify the details of the annealing process, we studied the changes in the physical properties and reaction products of Fe1+yTe0.6Se0.4 annealed in pnictogen (P, As, Sb) atmospheres. Crystals annealed in a pnictogen atmosphere show bulk superconductivity and the values of Tc and Jc are about 14 K and (2-4) × 105 A/cm2 (2 K, self-field), respectively. It is also found that the reaction rate increases with the increase in the saturated vapor pressure of the pnictogen. Unexpectedly, the reaction products of Fe1+yTe0.6Se0.4 after annealing in a P atmosphere mainly consist of FeTe2. In addition, the amount of P required to obtain the optimal Tc is much smaller than the amount of excess iron, which is similar to the case of oxygen annealing. P, oxygen, and to some extent As could serve as catalysts to form FeTe2 to remove excess iron.

  14. Effect of annealing on structural and magnetic properties of Al substituted nanocrystalline Fe-Si-Co alloy powders

    NASA Astrophysics Data System (ADS)

    Shyni, P. C.; Alagarsamy, Perumal

    2016-11-01

    We report effects of annealing and substitution of Al on structural and magnetic properties of nanocrystalline Fe80-xAlxCo5Si15 (x=0-10) alloy powders prepared by mechanical alloying process using a planetary ball mill technique. All the as-milled powders exhibit non-equilibrium solid solution of α-Fe (Si,Co,Al). While the average size of crystals decreases, the lattice constant and dislocation density increase with increasing Al content. On the other hand, the annealing at elevated temperatures increases the size of the crystals and decreases the dislocation density. In addition, the substitution of Al in FeAlCoSi alloy powders controls growth of the crystals during annealing. As a result, coercivity (HC) of the annealed powders decreases considerably. However, the variation in HC is dominated by the dislocation density. Fe70Al10Co5Si15 powder annealed at 900 °C exhibits improved magnetic properties (HC~14 Oe and moderate magnetization of 160 emu/g) due to optimum nanocrystalline microstructure with fine nanocrystals (~18 nm) and reduced dislocation density. Systematic correlations observed between structural and magnetic properties for Fe80-xAlxCo5Si15 powders reveal a promising approach to control the growth of the crystals in the annealed nanocrystalline alloys and to improve the magnetic properties of mechanically alloyed Fe-Si based nanocrystalline alloys by adding suitable substituting elements.

  15. Effects of annealing and pulse plating on soft magnetic properties of electroplated Fe-Ni films

    NASA Astrophysics Data System (ADS)

    Yanai, T.; Azuma, K.; Eguchi, K.; Watanabe, Y.; Ohgai, T.; Nakano, M.; Fukunaga, H.

    2016-05-01

    We have already reported that Fe-Ni films prepared in citric-acid-based plating baths show good soft magnetic properties. In this paper, we investigated the effect of the grain size of the Fe-Ni crystalline phase in the films on magnetic properties, and employed an annealing and a pulse plating method in order to vary the grain size. The coercivity of the annealed Fe-Ni films at 600 °C shows large value, and good correlation between the grain growth and the coercivity was observed. The pulse plating enables us to reduce the grain size of the as-plated Fe-Ni films compared with the DC plating method, and we realized smooth surface and low coercivity of the Fe-Ni films using the pulse plating method. From these results, we confirmed the importance of the reduction in the grain size, and concluded that a pulse plating is an effective method to improve the good soft magnetic properties for our previously-reported Fe-Ni films.

  16. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    SciTech Connect

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  17. Effects of thermal annealing on the radiation produced electron paramagnetic resonance spectra of bovine and equine tooth enamel: Fossil and modern

    NASA Astrophysics Data System (ADS)

    Weeks, Robert A.; Bogard, James S.; Elam, J. Michael; Weinand, Daniel C.; Kramer, Andrew

    2003-06-01

    The concentration of stable radiation-induced paramagnetic states in fossil teeth can be used as a measure of sample age. Temperature excursions >100 °C, however, can cause the paramagnetic state clock to differ from the actual postmortem time. We have heated irradiated enamel from both fossilized bovid and modern equine (MEQ) teeth for 30 min in 50 °C increments from 100 to 300 °C, measuring the electron paramagnetic resonance (EPR) spectrum after each anneal, to investigate such effects. Samples were irradiated again after the last anneal, with doses of 300-1200 Gy from 60Co photons, and measured. Two unirradiated MEQ samples were also annealed for 30 min at 300 °C, one in an evacuated EPR tube and the other in a tube open to the atmosphere, and subsequently irradiated. The data showed that hyperfine components attributed to the alanine radical were not detected in the irradiated MEQ sample until after the anneals. The spectrum of the MEQ sample heated in air and then irradiated was similar to that of the heat treated fossil sample. We conclude that the hyperfine components are due to sample heating to temperatures/times >100 °C/30 min and that similarities between fossil and MEQ spectra after the 300 °C/30 min MEQ anneal are also due to sample heating. We conclude that the presence of the hyperfine components in spectra of fossil tooth enamel indicate that such thermal events occurred either at the time of death, or during the postmortem history.

  18. Effect of Annealing on Microstructure and Tensile Properties of 5052/AZ31/5052 Clad Sheets

    NASA Astrophysics Data System (ADS)

    Nie, Huihui; Liang, Wei; Chi, Chengzhong; Li, Xianrong; Fan, Haiwei; Yang, Fuqian

    2016-05-01

    Three-layered 5052Al/AZ31Mg/5052Al (5052/AZ31/5052) clad sheets were fabricated by four-pass rolling and annealed under different conditions. Under the optimal annealing condition, homogeneous and equiaxial grains with an average AZ31 grain size of 5.24 µm were obtained and the maximum values of ultimate tensile strength and elongation of the clad sheet reached 230 MPa and 18%, respectively. Electron backscatter diffraction analysis showed that the AZ31 layer had a typical rolling texture with its c-axis parallel to the normal direction. The fraction of low-angle grain boundaries in the 5052 layer was nearly four times more than that in the AZ31 layer because of different deformation extent and recrystallization driving forces. The textures of Al3Mg2 and Mg17Al12 were similar to that of 5052 because of the deformation coordination during the rolling and recrystallization process. The orientation relationship between Mg17Al12 and AZ31 seemed to be (110) Mg17Al12//(10-11) AZ31.

  19. Effects of annealing pressure and Ar+ sputtering cleaning on Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Wang, Jiwei; Mei, Yong; Lu, Xuemei; Fan, Xiaoxing; Kang, Dawei; Xu, Panfeng; Tan, Tianya

    2016-11-01

    Post-treatments of Al-doped ZnO films fabricated by sol-gel method were studied in condition of annealing in air, vacuum and protective ambient, as well as the follow-up Ar+ sputtering cleaning. The effect of annealing pressure on resistivity of AZO films was investigated from 105 to 10-4 Pa, where the resistivity decreased four orders of magnitude as the pressure decreased and approached to its minimum at 10 Pa. It was observed that the main decreasing of resistivity occurred in a very narrow range of middle vacuum (between 100 and 10 Pa) and high vacuum was dispensable. The XRD and XPS characterizations demonstrated that the radical increasing of oxygen vacancy, Zn interstitial and substitution of Al3+ for Zn2+ under middle vacuum were responsible for the significant enhancement of conductivity. The follow-up Ar+ sputtering cleaning can further decrease the resistivity through removing the chemisorbed oxygen on film surface and grain boundaries, meanwhile fulfil the surface texture process, and thus improve both electrical and optical performances for applications.

  20. Infrared spectroscopy of water clusters isolated in methane matrices: Effects of isotope substitution and annealing

    NASA Astrophysics Data System (ADS)

    Yamakawa, Koichiro; Ehara, Namika; Ozawa, Nozomi; Arakawa, Ichiro

    2016-07-01

    Using infrared-active solvents of CH4 and CD4 for matrix isolation, we measured infrared spectra of H2O and D2O clusters at 7 K. The solute-concentration dependence of the spectrum of H2O clusters in a CH4 matrix was investigated and was used for the peak assignment. Annealing procedures were found to promote the size growth of water clusters in methane matrices for all the combinations of (H2O, CH4), (H2O, CD4), (D2O, CH4), and (D2O, CD4). We also monitored the ν3 absorption due to methane to find the annealing-induced structural change only of solid CH4. The matrix effects on the vibrations of the clusters are discussed on the basis of "Tc plots", where their frequencies are plotted as a function of the square root of the matrix critical temperature, Tc. The obtained plots assure the validity of the assignment of the cluster peaks.

  1. Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass

    SciTech Connect

    Ueda, A.; Wu, M.; Mu, R.

    1998-12-31

    The authors have fabricated Se nanoparticles in silica substrates by ion implantation followed by thermal annealing up to 1000 C, and studied the Se nanoparticle formation by optical absorption spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. The sample with the highest dose (1 {times} 10{sup 17} ions/cm{sup 2}) showed the nanoparticle formation during the ion implantation, while the lower dose samples (1 and 3 {times} 10{sup 16} ions/cm{sup 2}) required thermal treatment to obtain nano-sized particles. The Se nanoparticles in silica were found to be amorphous. After thermal annealing, the particle doses approached the value of bulk after thermal annealing. The temperature dependent absorption spectra were also measured for this system in a temperature range from 15 to 300 K.

  2. The effects of cluster carbon implantation at low temperature on damage recovery after annealing

    NASA Astrophysics Data System (ADS)

    Onoda, Hiroshi; Nakashima, Yoshiki; Hamamoto, Nariaki; Nagayama, Tsutomu; Koga, Yuji; Umisedo, Sei; Kawamura, Yasunori; Hashimoto, Masahiro

    2012-11-01

    Amorphous Si layer formation with cluster carbon ion implantations at low substrate temperature and its effects on damage recovery and diffusion suppression have been discussed. Cluster carbon molecule species (C3Hx˜C7Hx), implantation temperature (RT ˜ -60°C), implantation dose and energy were used as parameters. Amorphous Si formation by cluster carbon implantation is more effective compared with monomer carbon implantation. Low temperature cluster carbon implantations increase amorphous Si thickness far beyond monomer carbon implantation even at very low temperature. Amorphous-crystal interface smoothness was characterized by Rutherford Backscattering Spectroscopy, and is improved by lower temperature implantations. The smoothness improvement affects the residual damage, End of Range Defects, after annealing. Thicker amorphous Si over 100 nm depth can be formed with light Cn+ molecule implantations. That makes it possible to suppress wide distributed phosphorus diffusion.

  3. Effect of Nano-Particle Addition on Grain Structure Evolution of Friction Stir-Processed Al 6061 During Postweld Annealing

    NASA Astrophysics Data System (ADS)

    Guo, Junfeng; Lee, Bing Yang; Du, Zhenglin; Bi, Guijun; Tan, Ming Jen; Wei, Jun

    2016-08-01

    The fabrication of nano-composites is challenging because uniform dispersion of nano-sized reinforcements in metallic substrate is difficult to achieve using powder metallurgy or liquid processing methods. In the present study, Al-based nano-composites reinforced with Al2O3 particles have been successfully fabricated using friction stir processing. The effects of nano-Al2O3 particle addition on grain structure evolution of friction stir-processed Al matrix during post-weld annealing were investigated. It was revealed that the pinning effect of Al2O3 particles retarded grain growth and completely prevented abnormal grain growth during postweld annealing at 470°C. However, abnormal grain growth can still occur when the composite material was annealed at 530°C. The mechanism involved in the grain structure evolution and the effect of nano-sized particle addition on the mechanical properties were discussed therein.

  4. Effect of Nano-Particle Addition on Grain Structure Evolution of Friction Stir-Processed Al 6061 During Postweld Annealing

    NASA Astrophysics Data System (ADS)

    Guo, Junfeng; Lee, Bing Yang; Du, Zhenglin; Bi, Guijun; Tan, Ming Jen; Wei, Jun

    2016-06-01

    The fabrication of nano-composites is challenging because uniform dispersion of nano-sized reinforcements in metallic substrate is difficult to achieve using powder metallurgy or liquid processing methods. In the present study, Al-based nano-composites reinforced with Al2O3 particles have been successfully fabricated using friction stir processing. The effects of nano-Al2O3 particle addition on grain structure evolution of friction stir-processed Al matrix during post-weld annealing were investigated. It was revealed that the pinning effect of Al2O3 particles retarded grain growth and completely prevented abnormal grain growth during postweld annealing at 470°C. However, abnormal grain growth can still occur when the composite material was annealed at 530°C. The mechanism involved in the grain structure evolution and the effect of nano-sized particle addition on the mechanical properties were discussed therein.

  5. Effect of annealing on the thermal properties of poly (lactic acid)/starch blends.

    PubMed

    Lv, Shanshan; Gu, Jiyou; Cao, Jun; Tan, Haiyan; Zhang, Yanhua

    2015-03-01

    A comparative study of the thermal behavior of PLA/starch blends annealed at different temperatures has been conducted. Annealing was found to be beneficial to weaken and even eliminate the enthalpy relaxation near Tg. The degree of crystallinity was evaluated by means of DSC, and the results showed that the crystallinity of the samples increased as the annealing temperatures were increased. It was observed that, during the annealing process, the disorder α (α') crystal modification tended to transform into the order α crystal modification. All of the PLA/starch blends showed a double melting behavior. With the increase of annealing temperatures, the lower Tm1 increased, while the Tm2 showed no evident change. The XRD patterns also showed that annealing was beneficial to the samples to form higher crystallinity. The TGA results indicated that the annealed samples did not show any higher thermal stability than the virgin samples. The activation energy calculated by the Flynn-Wall-Ozawa method at lower conversion degrees confirmed that the annealing slightly slowed the degradation. The activation energy did not show any dependence on the conversion degree, which indicated that there existed a complex degradation process of the PLA/starch blends. The average activation energy did not show obvious differences, indicating that the annealing treatment had little influence on the degradation activation energy.

  6. Effect of Ag doping and annealing on thermoelectric properties of PbTe

    SciTech Connect

    Bala, Manju Tripathi, T. S.; Avasthi, D. K.; Asokan, K.; Gupta, Srashti

    2015-06-24

    The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.

  7. Effects of rolling temperature and subsequent annealing on mechanical properties of ultrafine-grained Cu–Zn–Si alloy

    SciTech Connect

    Zhang, Xiangkai; Yang, Xuyue; Chen, Wei; Qin, Jia; Fouse, Jiaping

    2015-08-15

    The effects of rolling temperature and subsequent annealing on mechanical properties of Cu–Zn–Si alloy were investigated by using X-ray diffraction, transmission electron microscope, electron back scattered diffraction and tensile tests. The Cu–Zn–Si alloy has been processed at cryogenic temperature (approximately 77 K) and room temperature up to different rolling strains. It has been identified that the cryorolled Cu–Zn–Si alloy samples show a higher strength compared with those room temperature rolled samples. The improved strength of cryorolled samples is resulted from grain size effect and higher densities of dislocations and deformation twins. And subsequent annealing, as a post-heat treatment, enhanced the ductility. An obvious increase in uniform elongation appears when the volume fraction of static recrystallization grains exceeds 25%. The strength–ductility combination of the annealed cryorolled samples is superior to that of annealed room temperature rolled samples, owing to the finer grains, high fractions of high angle grain boundaries and twins. - Highlights: • An increase in hardness of Cu–Zn–Si alloy is noticed during annealing process. • Thermal stability is reduced in Cu–Zn–Si alloy by cryorolling. • An obvious enhancement in UE is noticed when fraction of SRX grains exceeds 25%. • A superior strength–ductility combination is achieved in the cryorolling samples.

  8. Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.

    2008-01-01

    BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

  9. Effect of heating rate on intercritical annealing of low-carbon cold-rolled steel

    NASA Astrophysics Data System (ADS)

    Thomas, Larrin

    A study was performed on the effect of heating rate on transformations during intercritical annealing of cold-rolled low-carbon sheet steels. Two sets of experiments were developed: 1) a series of alloys (1020, 1019M, 15B25) with two different cold reductions (nominally 40 and 60 pct) were heated at different rates and transformation temperatures were determined using analysis of dilatometry and metallography of intercritically annealed samples, allowing the study of the impact of composition and cold work on transformation behavior with different heating rates. 2) A cold-rolled C-Mn-Nb steel was tested with different heating rates selected for different degrees of recrystallization during austenite formation to test the impact of ferrite recrystallization on austenite formation. Heat treated samples were analyzed with SEM, EBSD, dilatometry, and microhardness to study the changes in transformation behavior. The results of this study were extended by adding step heating tests, heat treatments with an intercritical hold, and secondary ion mass spectrometry (SIMS) measurements of Mn distribution. Austenite transformation temperatures increased logarithmically with heating rate. Greater degrees of cold work led to reduced transformation temperatures across all heating rates because the energy of cold work increased the driving force for austenite formation. The relative effects of alloying additions on transformation temperatures remained with increasing heating rate. Rapid heating minimized ferrite recrystallization and pearlite spheroidization. Austenite formation occurred preferentially in recovered ferrite regions as opposed to recrystallized ferrite boundaries. Martensite was evenly distributed in slowly heated steels because austenite formed on recrystallized, equiaxed, ferrite boundaries. With rapid heating, austenite formed in directionally-oriented recovered ferrite which increased the degree of banding. The greatest degree of banding was found with

  10. THE EFFECT OF POST-IRRADATION ANNEALING ON STACKING FAULT TETRAHEDRA IN NEUTRON-IRRADIATED OFHC COPPER

    SciTech Connect

    Edwards, Danny J.; Singh, Bachu N.; Eldrup, M.

    2003-09-03

    Two irradiation experiments have been completed wherein two sets of tensile specimens of OFHC copper were irradiated with fission neutrons, one set at 200 degrees C and the other at 250 degrees C. Post-irradiation annealing in vacuum was then used to evaluate the change in the defect microstructure, including vacancy-type SFT, voids, and dislocation loops. Individual samples within each set were given one annealing exposure at 300, 350, 400, 450, 500, or 550 degrees C for 2 hours. The fine-scale defect microstructure was characterized by transmission electron microscopy (TEM) to compare the defect size and spatial distribution at each annealing temperature and reference the results to that measured in the as-irradiated condition. Based on the change in the SFT size distributions, post-irradiation annealing led to a preferential removal of the smaller sized SFT, but did not lead to a general coarsening as might be expected from an Oswald ripening scenario. The issue of whether the SFT produced during irradiation are all structurally perfect is still being investigated at the time of this report, however, the images of the SFT appeared more perfect after annealing at 300 degrees C and higher. Further analysis is being performed to determine whether intermediate stages of SFT formation exist in the as-irradiated condition.

  11. Annealing Mechanism and Effect of Microwave Plasma Assisted Annealing on Properties of Sputtered Pb(Zr0.52Ti0.48)O3 Thin Films.

    PubMed

    Wan, Jing; Yang, Chengtao; He, Ming

    2016-03-01

    To solve some problems existing in PZT films, such as: large residual stresses, interface diffusion, and lead loss, etc., which were caused by high post-annealing temperatures, and to obtain thin films with high-preferred orientation and uniform size grain and dense microstructure, different technological conditions of microwave plasma assisted post-annealing had been pilot studied. X-ray diffraction was used to analyze the crystal structures of the films. Transmission electronic microscope was used to analyze the surface and the interface morphology of the films. Ferroelectric properties were showed by measuring the remnant polarization and the leakage current dependence of electric field. The results indicated that it was good for reducing lead loss and annealing temperature of PZT films by microwave plasma assisted annealing. Ferroelectric properties of the film could also be enhanced by this pilot annealing method.

  12. Annealing Mechanism and Effect of Microwave Plasma Assisted Annealing on Properties of Sputtered Pb(Zr0.52Ti0.48)O3 Thin Films.

    PubMed

    Wan, Jing; Yang, Chengtao; He, Ming

    2016-03-01

    To solve some problems existing in PZT films, such as: large residual stresses, interface diffusion, and lead loss, etc., which were caused by high post-annealing temperatures, and to obtain thin films with high-preferred orientation and uniform size grain and dense microstructure, different technological conditions of microwave plasma assisted post-annealing had been pilot studied. X-ray diffraction was used to analyze the crystal structures of the films. Transmission electronic microscope was used to analyze the surface and the interface morphology of the films. Ferroelectric properties were showed by measuring the remnant polarization and the leakage current dependence of electric field. The results indicated that it was good for reducing lead loss and annealing temperature of PZT films by microwave plasma assisted annealing. Ferroelectric properties of the film could also be enhanced by this pilot annealing method. PMID:27455722

  13. Photocatalytic activity of TiO2 nanoparticles: effect of thermal annealing under various gaseous atmospheres

    NASA Astrophysics Data System (ADS)

    Sarkar, Anjana; Shchukarev, Andrey; Leino, Anne-Riikka; Kordas, Krisztian; Mikkola, Jyri-Pekka; Petrov, Pavel O.; Tuchina, Elena S.; Popov, Alexey P.; Darvin, Maxim E.; Meinke, Martina C.; Lademann, Juergen; Tuchin, Valery V.

    2012-11-01

    The structure, composition and photocatalytic activity of TiO2 nanoparticles annealed in various gas atmospheres (N2, NH3 and H2) were studied in this work. The effect of treatment on crystal structure, particle size, chemical composition and optical absorbance were assessed by means of x-ray diffraction, transmission electron microscopy, x-ray photoelectron spectroscopy and diffuse optical reflectance/transmittance measurements, respectively. Photocatalytic properties of the materials were evaluated by three different methods: degradation of methyl orange in water, killing of Staphylococcus aureus bacteria and photogeneration of radicals in the presence of 3-carboxy-2,2,5,5-tetramethyl pyrrolidine-1-oxyl (PCA) marker molecules. The results indicate that the correlation between pretreatment and the photocatalytic performance depends on the photocatalytic processes and cannot be generalized.

  14. Post-irradiation annealing effects of austenitic stainless steels in IASCC

    SciTech Connect

    Katsura, Ryoei; Ishiyama, Yoshihide; Yokota, Norikatu; Kato, Takahiko; Nakata, Kiyotomo; Fukuya, Kouji; Sakamoto, Hiroshi; Asano, Kyoichi

    1998-12-31

    Post-irradiation annealing effects on the thermal sensitization and IASCC recovery for highly irradiated types 304 and 316L stainless steels were investigated using EPR and SSR tests. Irradiated type 316L stainless steel (neutron fluence: 8 x 10{sup 25} n/m{sup 2}, E > 1 MeV) was not sensitized and IGSCC susceptibility significantly was reduced to 7--0% at 400--700 C (x1h) from 23% at as-irradiated condition. Irradiated type 304 stainless steel (neutron fluence: 1.2 x 10{sup 26} n/m{sup 2}, E > 1MeV) was more easily sensitized than unirradiated material and IGSCC susceptibility was reduced to 62--45% at 400--500 C from 95% at the as-irradiated condition. These results on types 304 and 316L stainless steels indicated that the thermal healing technic enhanced IASCC recovery.

  15. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.

    PubMed

    Kim, Yong-Hoon; Kim, Kwang-Ho; Park, Sung Kyu

    2013-11-01

    In this paper, the effects of annealing conditions on the dielectric properties of solution-processed aluminum oxide (Al2O3) layers for indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) have been investigated. The dielectric properties of Al2O3 layers such as leakage current density and dielectric strength were largely affected by their annealing conditions. In particular, oxygen partial pressure in rapid thermal annealing, and the temperature profile of hot plate annealing had profound effects on the dielectric properties. From a refractive index analysis, the enhanced dielectric properties of Al2O3 gate dielectrics can be attributed to higher film density depending on the annealing conditions. With the low-temperature-annealed Al2O3 gate dielectric at 350 degrees C, solution-processed IZTO TFTs with a field-effect mobility of approximately 2.2 cm2/Vs were successfully fabricated. PMID:24245333

  16. The effect of annealing on the creep of plasma sprayed ceramics

    NASA Technical Reports Server (NTRS)

    Hendricks, R. C.; Mcdonald, G.; Mullen, R. L.

    1983-01-01

    The creep of plasma sprayed ZrO2-8Y2O3 was measured at temperatues from 98 to 1250 C (180 to 220 F), and compared to creep of identical samples after annealing at temperatures from 98 to 1316 C (1800 to 2400 F). Loads and temperatures which produced significant creep of as sprayed ceramics produced no creep after annealing.

  17. Effect of annealing temperature on gelatinization of rice starch suspension as studied by rheological and thermal measurements.

    PubMed

    Tsutsui, Kazumi; Katsuta, Keiko; Matoba, Teruyoshi; Takemasa, Makoto; Nishinari, Katsuyoshi

    2005-11-16

    The effect of annealing temperature (Ta) on the rheological behavior of 10 wt % rice starch suspension was investigated by the dynamic viscoelasticity, the differential scanning calorimetry (DSC), and the amount of leached out amylose and the swelling ratio of starch suspension. The rheological behaviors of the annealed samples are classified into three types in terms of Ta: Ta1, 48 and 55 degrees C, which are much lower than the gelatinization temperature, Tgel (=62 degrees C); Ta2, 58, 60, and 62 degrees C, which are almost the same as Tgel; and Ta3, 65, 68, 70, and 73 degrees C, which are much higher than Tgel. For the samples annealed at Ta2, the onset temperature of the storage and the loss moduli, G' and G'', increased with increasing T(a), and G' and G" in the temperature range from 65 to 90 degrees C gradually increased though smaller than those for the nonannealed sample, the control. This can be understood by the partial gelatinization; i.e., the leached out amylose prevents further amylose from leaching out. The rheological property of the samples annealed at Ta1 is not so different from that of the control, and the samples annealed at Ta3 are almost gelatinized. The rheological behavior of starch suspension can be controlled by Ta.

  18. The Effect of Thermal Annealing on Structural-phase Changes in the Ni-Ti Alloy Implanted with Krypton Ions

    NASA Astrophysics Data System (ADS)

    Poltavtseva, V. P.; Kislitsin, S. B.; Ghyngazov, S. A.

    2016-06-01

    The influence of thermal annealing within the temperature range 100-300°C on the structural-phase state of a Ni-Ti alloy with shape memory effect (SME) implanted with 84Kr ions at the energies E = 280 keV and 1.75 MeV/nucl and the fluences within 5·1012-1·1020 ion/m2 is investigated. For the samples modified by 84Kr ions at E = 1.75 MeV/nucl up to the fluences 1·1020 and 5·1012 ion/m2, the formation of a martensitic NiTi phase with the B19 ' structure, responsible for the SME, is revealed at the annealing temperatures 100 and 300°C, respectively, in the near-surface region corresponding to the outrange area. This is accompanied by the formation of nanosized NiTi particles in the R-phase. As the implantation fluence increases, the probability of their formation decreases. It is shown that annealing of the implanted structures can increase the strength of the Ni-Ti alloy. The degree of hardening is determined by the value of annealing temperature, and an increase in strength is primarily due to ordering of the radiation-induced defect structures (phases). A correlation between the onset temperature of a forward martensitic transition and the structural-phase state of the thermally annealed Ni-Ti alloy is established.

  19. Effects of annealing temperature on the properties of Ga-doped In2O3 Thin Films

    NASA Astrophysics Data System (ADS)

    Cho, Shinho

    2015-10-01

    Ga-doped In2O3 (GIO) thin films were deposited on glass substrates at a growth temperature of 300 °C by using radio-frequency magnetron sputtering. The deposited films were then subjected to rapid thermal annealing (RTA) at various temperatures. The annealed films were characterized by using X-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, and Hall-effect measurements. The optical bandgap, electrical resistivity, and figure of merit of the GIO thin films were found to depend significantly on the RTA temperature. The XRD patterns of the films indicated that all the films had a body-centered cubic structure, with the primary peak being the (222) diffraction peak. The average optical transmittance of the GIO thin films for wavelengths of 500 - 1100 nm increased from 44.5% before annealing to 87.2% after annealing at 450 °C; the figure of merit was also the highest after annealing at this temperature. These results indicate that the properties of GIO thin films can be varied by controlling the RTA temperature.

  20. The annealing effect on structural, optical and photoelectrical properties of CuInS 2/In 2S 3 films

    NASA Astrophysics Data System (ADS)

    Kundakçı, Mutlu

    2011-08-01

    Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS 2/In 2S 3 multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 °C for 30 min in nitrogen atmosphere and the annealing effect on structural, optical and photoelectrical properties of the film was investigated. X-ray diffraction (XRD) and optical absorption spectroscopy were used for structural and optical studies. Current-Voltage ( I-V) measurements were performed in dark environment and under 15, 30 and 50 mW/cm 2 light intensity to investigate the photosensitivity of the structure. Also, the electrical resistivity of the film was determined in the temperature range of 300-470 K. It was found that annealing temperature drastically affects the structural, optical and photoelectrical properties of the CuInS 2/In 2S 3 films.

  1. Effect of annealing and semiconductor nanoparticle incorporation on the performance of hybrid bulk hetero-junction solar cells

    NASA Astrophysics Data System (ADS)

    Truong, Nguyen Tam Nguyen; Park, Chinho; Jung, Jae Hak; Truong, Vu Luan Nguyen; Baik, Sung Sun

    2013-03-01

    Hybrid bulk hetero-junction solar cells were fabricated by blending [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and conjugate poly(3-hexyl thiophene) (P3HT) polymer. The effects of annealing and the incorporation of CdSe nanoparticles (NPs) on the device performance were investigated. Annealing and CdSe NP incorporation increased the charge carrier separation at the PCBM/polymer interface by increasing the short circuit current and efficiency. Thermal annealing of the fabricated cell structure at 140 °C for 5 min was found to be optimal for the device performance, resulting in a maximum power conversion efficiency of 4.2% under AM1.5G simulated solar irradiation.

  2. The size effect on solidification in eutectic bismuth-tin (Bi-Sn) nanowires by in-situ annealing processes.

    PubMed

    Chen, Shih-Hsun; Wang, Chiu-Yen; Chen, Lih-Juann; Liu, Tzeng-Feng; Chaol, Chuen-Guang

    2010-10-01

    The size effects on solidification and the formation mechanism of the segmented eutectic Bi-43Sn nanowires during in situ annealing have been investigated. A directional solidification along the wire axis limits the segmented eutectic nanowire to arrange axially during the in situ annealing processes due to directional solidification. In 70 nm nanowires, the small size confines the convection in liquid, which results in differences in the microstructure and composition profiles between 70 and 200 nm nanowires. In the vacuum hydraulic pressure injection process, the directional cooling helps the formation of single crystal, and the isotropic solidification leads to polycrystalline microstructure.

  3. Effect of Thermal Annealing on the Characteristics of Phosphorus-Implanted ZnO Crystals

    NASA Astrophysics Data System (ADS)

    Jeong, T. S.; Yu, J. H.; Mo, H. S.; Kim, T. S.; Lim, K. Y.; Youn, C. J.; Hong, K. J.; Kim, H. S.

    2014-07-01

    A P-doped ZnO surface layer on undoped ZnO wafers was prepared by phosphorus (P) ion implantation. Hall effect measurement revealed p-type conduction in such layers annealed at 800°C. This indicates that acceptor levels are present in P-doped ZnO, even though the ZnO is still n-type. Micro-Raman scattering in - z( xy) z geometry was conducted on P-implanted ZnO. The E {2/high} mode shift observed toward the high-energy region was related to compressive stress as a result of P-ion implantation. This compressive stress led to the appearance of an A 1(LO) peak, which is an inactive mode. This A 1(LO) peak relaxed during thermal annealing in ambient oxygen at temperatures higher than 700°C. The P2p3/2 peak observed at 135.6 eV by x-ray photoelectron spectroscopy is associated with chemical bond formation leading to 2(P2O5) molecules. This indicates that implanted P ions substituted Zn sites in the ZnO layer. In photoluminescence spectroscopy, the P-related peaks observed at energies ranging between 3.1 and 3.5 eV originated from (A0, X) emission, because of PZn-2VZn complexes acting as shallow acceptors. The acceptor level was observed to be 126.9 meV above the valence band edge. Observation of this P-related emission indicates that ion implantation results in acceptor levels in the P-doped ZnO layer. This suggests that the P2O5 bonds are responsible for the p-type activity of P-implanted ZnO.

  4. Effect of high-pressure annealing on the normal-state transport of LaO0.5F0.5BiS2

    NASA Astrophysics Data System (ADS)

    Pallecchi, I.; Lamura, G.; Putti, M.; Kajitani, J.; Mizuguchi, Y.; Miura, O.; Demura, S.; Deguchi, K.; Takano, Y.

    2014-06-01

    We study normal state electrical, thermoelectrical, and thermal transport in polycrystalline BiS2-based compounds, which become superconducting by F doping on the O site. In particular, we explore undoped LaOBiS2 and doped LaO0.5F0.5BiS2 samples, prepared either with or without high-pressure annealing, in order to evidence the roles of doping and preparation conditions. The high-pressure annealed sample exhibits room temperature values of resistivity ρ around 5 mΩcm, Seebeck coefficient S around -20μV /K, and thermal conductivity κ around 1.5 W/Km, while the Hall resistance RH is negative at all temperatures and its value is -10-8 m3/C at low temperature. The sample prepared at ambient pressure exhibits RH positive in sign and five times larger in magnitude, and S negative in sign and slightly smaller in magnitude. These results reveal a complex multiband evolution brought about by high-pressure annealing. In particular, the sign inversion and magnitude suppression of RH, indicating increased electron-type carrier density in the high-pressure sample, may be closely related to previous findings about change in lattice parameters and enhancement of superconducting Tc by high-pressure annealing. As for the undoped sample, it exhibits 10 times larger resistivity, 10 times larger |S|, and 10 times larger |RH| than its doped counterpart, consistent with its insulating nature. Our results point out the dramatic effect of preparation conditions in affecting charge carrier density as well as structural, band, and electronic parameters in these systems.

  5. The Effect of Annealing at 1500 C on Migration and Release of Ion Implanted Silver in CVD Silicon Carbide

    SciTech Connect

    HJ MacLean; RG Ballinger; LE Kolaya; SA Simonson; N Lewis; M Hanson

    2004-10-07

    The transport of silver in CVD {beta}-SiC has been studied using ion implantation. Silver ions were implanted in {beta}-SiC using the ATLAS accelerator facility at the Argonne National Laboratory. Ion beams with energies of 93 and 161 MeV were used to achieve deposition with peak concentrations at depths of approximately 9 and 13 {micro}m, respectively. As-implanted samples were then annealed at 1500 C for 210 or 480 hours. XPS, SEM, TEM, STEM, and optical methods were used to analyze the material before and after annealing. Silver concentration profiles were determined using XPS before and after annealing. STEM and SEM equipped with quantitative chemical analysis capability were used to more fully characterize the location and morphology of the silver before and after annealing. The results show that, within the uncertainty of measurement techniques, there is no silver migration, via either inter- or intragrannular paths, for the times and temperature studied. Additionally, the silver was observed to phase separate within the SiC after annealing. The irradiation damage from the implantation process resulted in a three-layer morphology in the as-implanted condition: (1) a layer of unaltered SiC, followed by (2) a layer of crystallized SiC, followed by (3) an amorphized layer which contained essentially all of the implanted silver. After annealing the layer structure changed. Layer 1 was unaltered. The grains in layer 2 recrystallized to form an epitaxial (columnar) layer. Layer 3 recrystallized to form a fine grain equiaxed layer. The results of this work do not support the long held assumption that silver release from CVD SiC, used for gas-reactor coated particle fuel, is dominated by grain boundary diffusion.

  6. Annealing effect for SnS thin films prepared by high-vacuum evaporation

    SciTech Connect

    Revathi, Naidu Bereznev, Sergei; Loorits, Mihkel; Raudoja, Jaan; Lehner, Julia; Gurevits, Jelena; Traksmaa, Rainer; Mikli, Valdek; Mellikov, Enn; Volobujeva, Olga

    2014-11-01

    Thin films of SnS are deposited onto molybdenum-coated soda lime glass substrates using the high-vacuum evaporation technique at a substrate temperature of 300 °C. The as-deposited SnS layers are then annealed in three different media: (1) H{sub 2}S, (2) argon, and (3) vacuum, for different periods and temperatures to study the changes in the microstructural properties of the layers and to prepare single-phase SnS photoabsorber films. It is found that annealing the layers in H{sub 2}S at 400 °C changes the stoichiometry of the as-deposited SnS films and leads to the formation of a dominant SnS{sub 2} phase. Annealing in an argon atmosphere for 1 h, however, causes no deviations in the composition of the SnS films, though the surface morphology of the annealed SnS layers changes significantly as a result of a 2 h annealing process. The crystalline structure, surface morphology, and photosensitivity of the as-deposited SnS films improves significantly as the result of annealing in vacuum, and the vacuum-annealed films are found to exhibit promising properties for fabricating complete solar cells based on these single-phase SnS photoabsorber layers.

  7. Improved cost-effectiveness of the block co-polymer anneal process for DSA

    NASA Astrophysics Data System (ADS)

    Pathangi, Hari; Stokhof, Maarten; Knaepen, Werner; Vaid, Varun; Mallik, Arindam; Chan, Boon Teik; Vandenbroeck, Nadia; Maes, Jan Willem; Gronheid, Roel

    2016-04-01

    This manuscript first presents a cost model to compare the cost of ownership of DSA and SAQP for a typical front end of line (FEoL) line patterning exercise. Then, we proceed to a feasibility study of using a vertical furnace to batch anneal the block co-polymer for DSA applications. We show that the defect performance of such a batch anneal process is comparable to the process of record anneal methods. This helps in increasing the cost benefit for DSA compared to the conventional multiple patterning approaches.

  8. The Effect of Hydrogen Annealing on the Oxidation Resistance of Four EPM Single Crystal Superalloys

    NASA Technical Reports Server (NTRS)

    Smialek, James L.; Barrett, Charles A.; Garlick, Ralph G.

    2001-01-01

    Four single crystal EPM (enabling propulsion materials) developmental airfoil superalloys were hydrogen annealed at 1300 C for up to 100 hours to remove sulfur and improve oxidation resistance. Although the 1100 and 1150 C cyclic oxidation resistance was remarkably improved by annealing for 24 or 100 hours, the behavior was still considerably inferior to that of commercially available single crystal superalloys, especially those that are either Y-doped or hydrogen annealed. Excessive degradation in the developmental alloys appeared to be correlated with low Cr contents and, to a lesser extent, high Co and Re contents.

  9. Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

    PubMed Central

    2014-01-01

    Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively. PMID:25249824

  10. Effects of the annealing temperature and atmosphere on the microstructures and dielectric properties of ZnO/Al2O3 composite coatings

    NASA Astrophysics Data System (ADS)

    Wei, Ping; Zhu, Dongmei; Huang, Shanshan; Zhou, Wancheng; Luo, Fa

    2013-11-01

    ZnO/Al2O3 composite coatings were fabricated by atmospheric plasma spraying technology (APS). The effects of annealing temperature and atmospheres (in air or vacuum) on the microstructure and phase transformation of the sprayed coatings were studied by scanning electron microscope (SEM) and X-ray diffraction spectroscopy (XRD). The microwave dielectric properties of these coatings after annealing treatment were also discussed in the frequency range of 8.2-12.4 GHz. Both the real part and the imaginary part of the permittivity decreased significantly with increased annealing temperature when the annealing process is carried out in air atmosphere, while the complex permittivity of the coating annealed in vacuum atmosphere was obviously increased compared to the initial sprayed coating. The mechanism for the variation of dielectric properties of sprayed ZnO/Al2O3 composite coating caused by annealing treatment was discussed in this study.

  11. Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe{sub 100−x}Co{sub x}(001) thin films (x < 11)

    SciTech Connect

    Kusaoka, A.; Kimura, J.; Takahashi, Y. Inaba, N.; Kirino, F.; Ohtake, M.; Futamoto, M.

    2015-05-07

    Effects of post-growth annealing on the magnetic damping of 3d transition alloy thin films were investigated. Fe{sub 100−x}Co{sub x} (x < 11 at. %) thin films were epitaxially deposited on GaAs(001) substrates by rf magnetron sputtering, and some of them were annealed without exposing to atmosphere. Electrical measurement showed that in-plane resistivity was smaller in the annealed films than in the as-deposited ones, indicating that the annealing mitigates crystalline imperfections and leads to reduced electron scattering rates. Magnetic damping was evaluated by the peak widths of ferromagnetic resonance (FMR) spectra obtained by a conventional Q-band spectrometer. Comparison of as-deposited and annealed specimens showed that the damping was decreased by annealing. Combined with the electrical and FMR measurements, these observations are consistent with the theoretical predictions that crystalline imperfections strongly influence the magnetic damping, both in intrinsic and extrinsic origins.

  12. Annealing polymer nanocomposite fibers and films with photothermal heating: effects on overall crystallinity and resultant mechanical properties

    NASA Astrophysics Data System (ADS)

    Viswanath, Vidya; Maity, Somsubhra; Bochinski, Jason; Clarke, Laura; Gorga, Russell

    2013-03-01

    Metal nanoparticles embedded within polymeric systems can be made to act as localized heat sources thereby aiding in-situ polymer processing. This is made possible by the surface plasmon resonance (SPR) mediated photothermal effect of gold nanoparticles, wherein incident light absorbed by the nanoparticle generates a non-equilibrium electron distribution which subsequently transfers this energy into the surrounding medium, resulting in a temperature increase in the immediate region around the particle. The current research demonstrates this effect in polymer nanocomposite systems, electrospun nanofiber mats and thin films, which have been annealed at temperatures above the glass transition and below melting. A non-contact temperature measurement technique utilizing embedded fluorophores has been used to monitor the average temperature within samples. The effect of annealing methods (conventional and plasmonic), annealing conditions (temperature and duration) and cooling mechanisms on the morphology, crystallinity, and mechanical properties of polymeric nanocomposite systems will be discussed. The specificity of plasmonic heating coupled with the inside-outside approach of annealing presents a unique tool to thermally process polymers. NSF grant MPM 1069108.

  13. Real-Time Guided Wave Depolarized Light Scattering of Block Copolymer Thin Films during in Situ Annealing

    NASA Astrophysics Data System (ADS)

    Wilbur, Jeffrey; Balsara, Nitash; Fang, Zhuangxi; Newstein, Maurice; Garetz, Bruce

    2007-03-01

    The guided wave depolarized light scattering technique for measuring grain structure in block copolymer thin films has been further developed to enable us to measure scattering in films heated above the glass transition temperature. We previously published work in which we used a prism to couple a plane-polarized beam into and out of the transverse magnetic (TM) mode of a glassy polymer film, measured the extent of depolarized scattering into the transverse electric (TE) mode within the film, and correlated the intensity of the TE signal to grain structure. Through the design and incorporation of a grating coupler system in which the polymer film is deposited onto the coupler itself, we have supplanted the prism coupler and removed the requirement that the measured film be glassy, enabling measurements of grain structure during annealing. Coupled with our recently developed theoretical solution for GWDLS, we are able to analyze the grain structure averaged over a 1 cm cross section of a film as it changes in real time.

  14. Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

    SciTech Connect

    Londos, C. A.; Andrianakis, A.; Sgourou, E. N.; Emtsev, V.; Ohyama, H.

    2010-05-15

    This paper is devoted to the annealing studies of defects produced in carbon-rich Ge-doped Czochralski-grown Si (Cz-Si) by 2 MeV electron irradiation. The annealing temperature of vacancy-oxygen (VO) complexes, carbon interstitial-oxygen interstitial (C{sub i}O{sub i}), and carbon interstitial-carbon substitutional (C{sub i}C{sub s}) pairs as well as the formation temperature of vacancy-two oxygen (VO{sub 2}) complexes are monitored as a function of Ge concentration. It has been established that the annealing of C{sub i}O{sub i} and C{sub i}C{sub s} defects remains practically unaffected by the Ge presence, whereas the annealing temperature of VO defects and the formation temperature of VO{sub 2} complexes are substantially lowered at Ge concentrations larger than 1x10{sup 19} cm{sup -3}. The hydrostatic component of elastic strains introduced by Ge atoms in the Si crystal lattice was calculated. It appears to be very small, at least insufficient to exert a pronounced effect upon the annealing behavior of radiation-produced defects. This conclusion is in line with what is observed for the C{sub i}O{sub i} and C{sub i}C{sub s} species. In the case of VO, whose annealing process in Cz-Si is concurrently conducted by two reaction paths VO+O{sub i}{yields}VO{sub 2} and VO+Si{sub I}{yields}O{sub i}, we suggest that the latter reaction in Ge-doped Cz-Si is enhanced by emitting self-interstitials (Si{sub I}) from loosely bound self-interstitial clusters predominantly formed around Ge impurity atoms. As a result, the liberation of self-interstitials at lower annealing temperatures leads to an enhanced annealing of VO defects. An enhanced formation of VO{sub 2} complexes at lower temperatures is also discussed in terms of other reactions running in parallel with the reaction VO+Si{sub I}{yields}O{sub i}.

  15. The effect of annealing on the creep of plasma-sprayed ceramics

    NASA Technical Reports Server (NTRS)

    Hendricks, R. C.; Mcdonald, G.; Mullen, R. L.

    1983-01-01

    The creep of plasma sprayed ZrO2-8Y2O3 was measured at temperatures from 98 to 1250 C (180 to 220 F), and compared to creep of identical samples after annealing at temperatures from 98 to 1316 C (1800 to 2400 F). Loads and temperatures which produced significant creep of as sprayed ceramics produced no creep after annealing. Previously announced in STAR as N83-24799

  16. Effect of aging and annealing on perpendicular magnetic anisotropy of ultra-thin CoPt films

    NASA Astrophysics Data System (ADS)

    Hara, R.; Hayakawa, K.; Ebata, K.; Sugita, R.

    2016-05-01

    The effect of aging and annealing on the magnetic properties of ultra-thin CoPt films with a Ru underlayer was investigated. For the 3 nm thick CoPt film aged in the air, the decrease of the saturation magnetic moment ms, the drastic increase of the perpendicular coercivity Hc⊥ and the perpendicular anisotropy were observed. This is because the surface layer of the CoPt film was oxidized and the bottom layer with high perpendicular anisotropy due to lattice distortion remained. For the annealed 3 nm thick CoPt film with a Pt protective layer, rising the annealing temperature Ta led to the decrease of ms, the decrease after increase of Hc⊥, and the decrease of the perpendicular squareness ratio S⊥ at Ta of 400 ∘C. The origins of effect of annealing were considered to be the grain boundary diffusion and the bulk diffusion of Ru and Pt into the CoPt film, and relaxation of the lattice distortion.

  17. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    SciTech Connect

    Pastor, D.; Cusco, R.; Artus, L.; Gonzalez-Diaz, G.; Iborra, E.; Jimenez, J.; Peiro, F.; Calleja, E.

    2006-08-15

    We have studied the effects of rapid thermal annealing at 1300 deg.C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si{sub 3}N{sub 4} crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3 nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

  18. Effects of post-growth annealing in a CoFeB/MgO/CoFeB trilayer structure

    NASA Astrophysics Data System (ADS)

    Ying, Ji-Feng; Ter Lim, Sze; Tran, Michael; Ji, Rong

    2015-11-01

    CoFeB/MgO/CoFeB tri-layer thin-film stacks have been widely used in the design of STT-RAM devices as functional magnetic-tunnel-junction (MTJ) structures. The materials properties of the CoFeB and MgO layers, including composition and lattice quality, have been extensively researched from the stand point of optimizing for the best MTJ performance. On the other hand, post-growth annealing is required for the MTJ structure to acquire its functional property, i.e. its TMR performance. In this work, we have studied the various possible effects resulting from the post-growth annealing process. Specifically, we show that the post-growth annealing causes boron in the top and bottom CoFeB layers to migrate into the adjacent Ta layers as well as deterioration in lattice quality of the MgO layer. Furthermore, we evaluate other effects that could be possibly induced during the annealing process, including Ta diffusion and layer intermixing in the CoFeB/MgO/CoFeB tri-layer structure. The post-growth annealing causes little change in the Ta diffusion and the layer intermixing. These annealing effects were also evaluated with respect to variations in the MgO growth process; more specifically, an additional natural oxidation treatment during the MgO layer deposition and the insertion of a Fe layer before the MgO layer. Our results indicate that the addition of a natural oxidation process during the MgO deposition process and the insertion of a thin-layer of Fe before the MgO layer both lead to a reduction in the layer intermixing between the MgO and the CoFeB layer and to an improvement in MgO lattice quality. We also show that the post-growth annealing does not alter the beneficial effect of these MgO growth process modifications.

  19. Study of thermal annealing effect on Bragg gratings photo-inscribed in step-index polymer optical fibers

    NASA Astrophysics Data System (ADS)

    Hu, X.; Kinet, D.; Mégret, P.; Caucheteur, C.

    2016-04-01

    In this paper, both non-annealed and annealed trans-4-stilbenemethanol-doped step-index polymer optical fibers were photo-inscribed using a 325 nm HeCd laser with two different beam power densities reaching the fiber core. In the high density regime where 637 mW/mm2 are used, the grating reflectivity is stable over time after the photo-writing process but the reflected spectrum is of limited quality, as the grating physical length is limited to 1.2 mm. To produce longer gratings exhibiting more interesting spectral features, the beam is enlarged to 6 mm, decreasing the power density to 127 mW/mm2. In this second regime, the grating reflectivity is not stable after the inscription process but tends to decay for both kinds of fibers. A fortunate property in this case results from the possibility to fully recover the initial reflectivity using a post-inscription thermal annealing, where the gratings are annealed at 80 °C during 2 days. The observed evolutions for both regimes are attributed to the behavior of the excited intermediate states between the excited singlet and the ground singlet state of trans- and cis-isomers as well as the temperature-dependent glassy polymer matrix.

  20. Effect of thermal annealing on the structural and optical properties of spin coated copper phthalocyanine thin films

    NASA Astrophysics Data System (ADS)

    Afify, H. A.; Gadallah, A.-S.; El-Nahass, M. M.; Atta Khedr, M.

    2015-10-01

    Low cost sol-gel spin coating was used to deposit copper phthalocyanine (CuPc) thin films on both fused quartz and glass substrate. The prepared films were studied before and after thermal annealing at 350 °C for 1 h in air. X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) were used to study the structural properties. From the structural characterization results, the films transformed from the metastable α-phase to the stable β-phase. Refractive index, absorption coefficient, and lattice dielectric constant were evaluated before and after annealing for the first time for spin coated CuPc thin films using spectrophotometric measurements in the spectral range 200-2500 nm. The values of the direct optical band gap of the as deposited film at 1.52 eV and 2.85 eV were redshifted to 1.4 eV and 2.42 eV for the annealed film. This shift is significant for near infrared photonics. The third order non-linear susceptibility was presented at lower photon energy for the CuPc films showing higher value for the annealed film.

  1. Effect of annealing temperature on structural and magnetic properties of strontium hexaferrite nanoparticles synthesized by sol-gel auto-combustion method

    NASA Astrophysics Data System (ADS)

    Roohani, Ebrahim; Arabi, Hadi; Sarhaddi, Reza; Sudkhah, Saeedeh; Shabani, Ameneh

    2015-10-01

    In this paper, strontium hexaferrite nanoparticles were synthesized by the sol-gel auto-combustion method. Effect of annealing temperature on crystal structure, morphology and magnetic properties of nanoparticles was investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM). Also, the thermal decomposition of as-synthesized powdered samples has been studied by thermogravimetric analysis (TGA). The XRD patterns confirmed the formation of single phase M-type hexagonal crystal structure for powders annealed above 950∘C, whereas the presence of hematite (α-Fe2O3) as secondary phase was also observed for sample annealed at 900∘C. Furthermore, the crystallinity along with the crystallite size were augmented with annealing temperature. Comparison of the FT-IR spectra of the samples before and after annealing treatment showed the existence of metal-oxygen stretching modes after annealing. The thermogravimetric analysis confirmed the thermal decomposition of as-burnt powders happened in three-stage degradation process. The TEM images showed the nanoparticles like hexagonal-shaped platelets as the size of nanoparticles increases by increasing the annealing temperature. With increasing annealing temperature, the magnetic saturation and the coercivity were increased to the maximum value of 74.26 emu/g and 5.67 kOe for sample annealed at 1000∘C and then decreased.

  2. Effect of annealing on graphene incorporated poly-(3-hexylthiophene):CuInS{sub 2} photovoltaic device

    SciTech Connect

    Kumari, Anita Dixit, Shiv Kumar; Singh, Inderpreet

    2014-10-15

    The effect of thermal annealing on the power conversion efficiency (PCE) of poly(3-hexylthiophene) (P3HT):CuInS{sub 2} quantum dot:graphene photovoltaic device has been studied by analyzing optical characteristics of composite films and electrical characteristics of the device with structure indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS)/P3HT:CIS:graphene/LiF/aluminum. It was observed that after annealing at 120°C for 15 min a typical device containing 0.005 % w/w of graphene shows the best performance with a PCE of 1.3%, an open-circuit voltage of 0.44V, a short-circuit current density of 7.6 mA/cm{sup 2}, and a fill factor of 0.39. It is observed that the thermal annealing considerably enhances the efficiency of solar cells. However, an annealing at higher temperature such as at 140°C results in a decrease in the device efficiency.

  3. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    SciTech Connect

    Yastrubchak, O. Gluba, L.; Żuk, J.; Wosinski, T. Andrearczyk, T.; Domagala, J. Z.; Sadowski, J.

    2014-01-07

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  4. Effects of annealing, acid and alcoholic beverages on Fe1+yTe0.6Se0.4

    NASA Astrophysics Data System (ADS)

    Sun, Y.; Taen, T.; Tsuchiya, Y.; Shi, Z. X.; Tamegai, T.

    2013-01-01

    We have systematically investigated and compared different methods to induce superconductivity in the iron chalcogenide Fe1+yTe0.6Se0.4, including annealing in a vacuum, N2, O2 and I2 atmospheres and immersing samples into acid and alcoholic beverages. Vacuum and N2 annealing are proved to be ineffective in inducing superconductivity in a Fe1+yTe0.6Se0.4 single crystal. Annealing in O2 and I2 and immersion in acid and alcoholic beverages can induce superconductivity by oxidizing the excess Fe in the sample. Superconductivity in O2 annealed samples is of a bulk nature, while I2, acid and alcoholic beverages can only induce superconductivity near the surface. By comparing the different effects of O2, I2, acid and alcoholic beverages we propose a scenario to explain how the superconductivity is induced in the non-superconducting as-grown Fe1+yTe0.6Se0.4.

  5. Effect of Variants of Thermomechanical Working and Annealing Treatment on Titanium Alloy Ti6Al4V Closed Die Forgings

    NASA Astrophysics Data System (ADS)

    Gupta, R. K.; Kumar, V. Anil; Kumar, P. Ram

    2016-06-01

    Performance of titanium alloy Ti6Al4V pressure vessels made of closed die forged domes of route `B' (multiple step forged and mill annealed) is reported to be better than route `A' (single/two step forged and mill annealed). Analysis revealed that forgings processed through route `B' have uniformity in microstructure and yield strength at various locations within the forging, as compared to that of route `A.' It is attributed to in-process recrystallization (dynamic as well as static) of route `B' forgings as compared to limited recrystallization of route `A' forgings. Further, post-forging recrystallization annealing (RA) effect is found to be more significant for route `A' forgings in achieving uniform microstructure and mechanical properties, since route `B' forgings have already undergone similar phenomenon during the thermomechanical working process itself. Considering prime importance of yield strength, statistical scatter in yield strength values within the forgings have been evaluated for forgings of both the routes. Standard deviation in the yield strength of route `B' forgings was lower (<10 MPa) as compared to route `A' (>15 MPa), which later became lower (~10 MPa) after RA with a minor decrease in yield strength. The present work discusses these variants of thermomechanical processing along with annealing to achieve better uniformity in properties and microstructure.

  6. Annealing effects on the bonding structures, optical and mechanical properties for radio frequency reactive sputtered germanium carbide films

    NASA Astrophysics Data System (ADS)

    Hu, C. Q.; Zhu, J. Q.; Zheng, W. T.; Han, J. C.

    2009-01-01

    The effects of thermal annealing in vacuum on the bonding structures, optical and mechanical properties for germanium carbide (Ge 1- xC x) thin films, deposited by radio frequency (RF) reactive sputtering of pure Ge(1 1 1) target in a CH 4/Ar mixture discharge, are investigated. We find that there are no significant changes in the bonding structure of the films annealed below 300 °C. The fraction of Ge-H bonds for the film annealed at temperatures ( Ta) above 300 °C decreases, whereas that of C-H bonds show a decrease only when Ta exceeds 400 °C. The out-diffusion of hydrogen promotes the formation of Ge-C bonds at Ta above 400 °C and thus leads to a substantial increase in the compressive stress and hardness for the film. The refractive indices and optical gaps for Ge 1- xC x films are almost constant against Ta, which can be ascribed to the unchanged ratios of Ge/C and sp 2-C/sp 3-C concentrations. Furthermore, we also find that the excellent optical transmission for an antireflection Ge 1- xC x double-layer film on ZnS substrate is still maintained after annealing at 700 °C.

  7. Effects of high-temperature anneals and {sup 60}Co gamma-ray irradiation on strained silicon on insulator

    SciTech Connect

    Park, K.; Canonico, M.; Celler, G. K.; Seacrist, M.; Chan, J.; Gelpey, J.; Holbert, K. E.; Nakagawa, S.; Tajima, M.; Schroder, D. K.

    2007-10-01

    Strained silicon on insulator was exposed to high-temperature annealing and high-dose {sup 60}Co gamma ({gamma})-ray irradiation to study the tenacity of the bond between the strained Si film and the underlying buried oxide. During the high-temperature anneals, the samples were ramped at a rate of 150 deg. C/s to 850 deg. C then ramped to 1200, 1250, and 1300 deg. C at a rate of approximately 5x10{sup 5} deg. C/s for millisecond duration anneals. For the irradiation experiments, the samples were irradiated with {sup 60}Co {gamma} rays to a dose of 51.5 kGy. All samples were characterized by ultraviolet (UV) Raman, pseudo metal-oxide-semiconductor field-effect transistor ({psi}-MOSFET) current voltage, Hall mobility, and photoluminescence (PL) to verify changes in strain. UV Raman, PL, and {psi}-MOSFET measurements show no strain relaxation for the high-temperature annealed samples and only very slight relaxation for the {gamma}-ray irradiated samples.

  8. Effect of Solution Annealing on Susceptibility to Intercrystalline Corrosion of Stainless Steel with 20% Cr and 8% Ni

    NASA Astrophysics Data System (ADS)

    Taiwade, R. V.; Patil, A. P.; Patre, S. J.; Dayal, R. K.

    2013-06-01

    In general, as-received (AR) austenitic stainless steels (ASSs) contain complex carbide precipitates due to manufacturing operations, subsequent annealing treatment, or due to the fabrication processes such as welding. The presence of pre-existing carbides leads to cumulative sensitization and make the steel susceptible to intercrystalline corrosion (ICC)/intergranular corrosion (IGC) which causes premature failure during service. Solution annealing (SA) is one of the ways to deal with such situations. In this present investigation, the AR (hot rolled and mill annealed) chromium-nickel (Cr-Ni) ASS is compared with SA Cr-Ni ASS. The extent of ICC/IGC was evaluated qualitatively and quantitatively by various electrochemical tests including ASTM standard A-262 Practice A and Practice E, double loop electrochemical potentiokinetic reactivation and electrochemical impedance spectroscopy. The degree of sensitization for hot rolled mill annealed AR condition is found to be substantially higher (51.55%) than that of SA condition (26.9%) for thermally aged samples (at 700 °C). The chemical composition across the grain boundary was measured using electron probe micro-analyzer for both (AR and SA) conditions and confirms that the pre-sensitization effect was completely removed after SA treatment.

  9. Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

    NASA Technical Reports Server (NTRS)

    Garlick, G. F. J.; Kachare, A. H.

    1981-01-01

    Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

  10. Effect of Austenite Stability on Microstructural Evolution and Tensile Properties in Intercritically Annealed Medium-Mn Lightweight Steels

    NASA Astrophysics Data System (ADS)

    Song, Hyejin; Sohn, Seok Su; Kwak, Jai-Hyun; Lee, Byeong-Joo; Lee, Sunghak

    2016-06-01

    The microstructural evolution with varying intercritical-annealing temperatures of medium-Mn ( α + γ) duplex lightweight steels and its effects on tensile properties were investigated in relation to the stability of austenite. The size and volume fraction of austenite grains increased as the annealing temperature increased from 1123 K to 1173 K (850 °C to 900 °C), which corresponded with the thermodynamic calculation data. When the annealing temperature increased further to 1223 K (950 °C), the size and volume fraction were reduced by the formation of athermal α'-martensite during the cooling because the thermal stability of austenite deteriorated as a result of the decrease in C and Mn contents. In order to obtain the best combination of strength and ductility by a transformation-induced plasticity (TRIP) mechanism, an appropriate mechanical stability of austenite was needed and could be achieved when fine austenite grains (size: 1.4 μm, volume fraction: 0.26) were homogenously distributed in the ferrite matrix, as in the 1123 K (850 °C)—annealed steel. This best combination was attributed to the requirement of sufficient deformation for TRIP and the formation of many deformation bands at ferrite grains in both austenite and ferrite bands. Since this medium-Mn lightweight steel has excellent tensile properties as well as reduced alloying costs and weight savings, it holds promise for new automotive applications.

  11. Effect of annealing on the structural and nonlinear optical properties of ZnO thin films under cw regime

    NASA Astrophysics Data System (ADS)

    Nagaraja, K. K.; Pramodini, S.; Poornesh, P.; Nagaraja, H. S.

    2013-02-01

    We report on the studies of the effects of annealing on the structural and third-order nonlinear optical properties of ZnO thin films deposited on quartz substrates by the RF magnetron sputtering technique. The films were annealed in the temperature range 400-1000 °C. The third-order nonlinear optical studies were carried out using the z-scan technique under continuous wave (cw) He-Ne laser irradiation at 633 nm wavelength. The effects of annealing on the structural properties were examined using x-ray diffraction and atomic force microscopy (AFM). The (0 0 2) preferred orientation increased with increase in annealing temperature up to 800 °C. The crystalline phases of SiO2 were observed at higher annealing temperatures. The appearance of an extraneous phase was confirmed by AFM images and optical transmittance spectra. The samples exhibited nonlinear absorption and nonlinear refraction under the experimental conditions. The negative sign of the nonlinear refractive index n2 indicated that the films exhibit self-defocusing property due to thermal nonlinearity. The nonlinear refractive index n2, the nonlinear absorption coefficient βeff and the third-order optical susceptibility χ(3) were found to be of the highest orders. The estimated value of third-order optical susceptibility χ(3) was of the order of 10-3 esu. Multiple diffraction rings were observed when the samples were exposed to the laser beam. The appearance of rings was due to the refractive index change and thermal lensing. With increase in laser intensity, the variations of the self-diffraction ring patterns were studied experimentally. The films also exhibited strong optical limiting properties under cw laser excitation, and reverse saturable absorption was the dominant process leading to the observed nonlinear behaviour.

  12. Annealing effects and degradation mechanism of NiFe/Cu GMR multilayers

    NASA Astrophysics Data System (ADS)

    Hecker, M.; Tietjen, D.; Wendrock, H.; Schneider, C. M.; Cramer, N.; Malkinski, L.; Camley, R. E.; Celinski, Z.

    2002-05-01

    Structural, transport and magnetic properties of sputtered Ni 80Fe 20/Cu multilayers showing giant magnetoresistance (GMR) were studied using X-ray reflectometry and diffraction, transport measurements, ferromagnetic resonance (FMR), and magneto-optical Kerr effect. In particular, mechanisms of the GMR degradation at elevated temperatures were investigated. Multilayers with an individual layer thickness of 2 nm show a sharp drop of the GMR after annealing at about 250°C. Whereas below this temperature grain growth and defect reduction contribute to a partial improvement of the GMR, above ˜250°C interdiffusion between Ni and Cu appears to lead to layer intermixing and to the degradation of transport and magnetic properties. Moreover, the initial <1 1 1> texture sharpens, and strong tensile stresses arise in the layer stack. We correlated the structural alterations to changes in the magnetic properties such as the strength of the antiferromagnetic coupling (bilinear and biquadratic) and the magnetic anisotropy. Above 250°C an increasing magnetic inhomogeneity of the Permalloy layers can be inferred from the FMR linewidth broadening.

  13. Effect of annealing temperature on wettability of TiO2 nanotube array films

    PubMed Central

    2014-01-01

    Highly ordered TiO2 nanotube array (TN) films were prepared by anodization of titanium foil in a mixed electrolyte solution of glycerin and NH4F and then annealed at 200°C, 400°C, 600°C, and 800°C, respectively. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), water contact angle (WCA), and photoluminescence (PL). It was found that low temperature (below 600°C) has no significant influence on surface morphology, but the diameter of the nanotube increases from 40 to 50 nm with increasing temperature. At 800°C, the nanotube arrays are completely destroyed and only dense rutile film is observed. Samples unannealed and annealed at 200°C are amorphous. At 400°C, anatase phase appears. At 600°C, rutile phase appears. At 800°C, anatase phase changes into rutile phase completely. The wettability of the TN films shows that the WCAs for all samples freshly annealed at different temperatures are about 0°. After the annealed samples have been stored in air for 1 month, the WCAs increase to 130°, 133°, 135°, 141°, and 77°, respectively. Upon ultraviolet (UV) irradiation, they exhibit a significant transition from hydrophobicity to hydrophilicity. Especially, samples unannealed and annealed at 400°C show high photoinduced hydrophilicity. PMID:25426006

  14. The effect of neutron irradiation dose on vacancy defect accumulation and annealing in pure nickel

    NASA Astrophysics Data System (ADS)

    Druzhkov, A. P.; Arbuzov, V. L.; Perminov, D. A.

    2012-02-01

    In order to investigate the dose dependence of vacancy defect evolution in nickel, specimens of high-purity Ni were neutron-irradiated at ˜330 K in the IVV-2M reactor (Russia) to fluencies in the range of 1 × 10 21-1 × 10 23 n/m 2 ( E > 0.1 MeV) corresponding to displacement dose levels in the range of about 0.0001-0.01 dpa and subsequently stepwise annealed to about 900 K. Ni was characterized both in as-irradiated state as well as after post-irradiation annealing by positron annihilation spectroscopy. The formation of three-dimensional vacancy clusters (3D-VCs) in cascades was observed under neutron irradiation, the concentration of 3D-VCs increases with increasing dose level. 3D-VCs collapse into secondary-type clusters (stacking fault tetrahedra (SFTs), and vacancy loops) during stepwise annealing at 350-450 K. It is shown that the thermal stability of SFTs grow with increasing dose level, probably, it is due to growth of the average SFT size during annealing. The results of annealing experiments on electron-irradiated Ni at 300 K are indicated in the paper, for comparison. We also have briefly discussed the positron response to the SFT-like structures.

  15. Effect of salt and RNA structure on annealing and strand displacement by Hfq.

    PubMed

    Hopkins, Julia F; Panja, Subrata; McNeil, Stephanie A N; Woodson, Sarah A

    2009-10-01

    The Sm-like protein Hfq promotes the association of small antisense RNAs (sRNAs) with their mRNA targets, but the mechanism of Hfq's RNA chaperone activity is unknown. To investigate RNA annealing and strand displacement by Hfq, we used oligonucleotides that mimic functional sequences within DsrA sRNA and the complementary rpoS mRNA. Hfq accelerated at least 100-fold the annealing of a fluorescently labeled molecular beacon to a 16-nt RNA. The rate of strand exchange between the oligonucleotides increased 80-fold. Therefore, Hfq is very active in both helix formation and exchange. However, high concentrations of Hfq destabilize the duplex by preferentially binding the single-stranded RNA. RNA binding and annealing were completely inhibited by 0.5 M salt. The target site in DsrA sRNA was 1000-fold less accessible to the molecular beacon than an unstructured oligonucleotide, and Hfq accelerated annealing with DsrA only 2-fold. These and other results are consistent with recycling of Hfq during the annealing reaction, and suggest that the net reaction depends on the relative interaction of Hfq with the products and substrates.

  16. Annealing effects and DLTS study on NPN silicon bipolar junction transistors irradiated by heavy ions

    NASA Astrophysics Data System (ADS)

    Liu, Chaoming; Li, Xingji; Yang, Jianqun; Rui, Erming

    2014-01-01

    Isochronal anneal sequences have been carried out on 3DG112 silicon NPN bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve is utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. We find that the base current (IB) decreases with the increasing annealing temperature, while the collector current (IC) remains invariable. The current gain varies slightly, when the annealing temperature (TA) is lower than 400 K, while varies rapidly at TA<450 K, and the current gain of the 3DG112 BJT annealing at 700 K almost restore to that of the pre-radiation transistor. Deep level transient spectroscopy (DLTS) data is used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V2(-/0)+V-P traps are the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V2(-/0)+V-P peak has many of the characteristics expected for the current gain degradation.

  17. Effect of annealing on atomic ordering of amorphous ZrTaTiNbSi alloy

    NASA Astrophysics Data System (ADS)

    Yang, Tsung-Han; Huang, Rong-Tang; Wu, Cheng-An; Chen, Fu-Rong; Gan, Jon-Yiew; Yeh, Jien-Wei; Narayan, Jagdish

    2009-12-01

    In this letter, we have reported on initial stages of atomic ordering in ZrTaTiNbSi amorphous films during annealing. The atomic ordering and structure evolution were studied in Zr17Ta16Ti19Nb22Si26 amorphous films as a function of annealing temperature in the temperature range from 473 to 1173 K. Up to annealing temperature of 1173 K, the films retained amorphous structure, but the degree of disorder is increased with the increase in temperature. The formation of Si-M covalent bonds, which contributed to the local atomic arrangement, occurred in the initial stages of ordering. The bonding reactions between Si and other metal species explain the anomalous structural changes which were observed in x-ray diffraction and transmission electron microscopy. We discuss the stages of phase transformation for amorphous films as a function of annealing temperature. From these results, we propose that annealing leads to formation of random Si-M4 tetrahedron, and two observed rings, a first and second in the electron diffraction patterns compared to M-M and Si-M bond length, respectively.

  18. STIS CCD Hot Pixel Annealing

    NASA Astrophysics Data System (ADS)

    Hernandez, Svea

    2013-10-01

    This purpose of this activity is to repair radiation induced hot pixel damage to theSTIS CCD by warming the CCD to the ambient instrument temperature and annealing radiation damaged pixels. Radiation damage creates hot pixels in the STIS CCD Detector. Many of these hot pixels can be repaired by warming the CCD from its normal operating temperature near-83 C to the ambient instrument temperature { +5 C} for several hours. The number of hot pixels repaired is a function of annealing temperature. The effectiveness of the CCD hot pixel annealing process is assessed by measuring the dark current behavior before and after annealing and by searching for any window contamination effects.

  19. Effect of postdeposition annealing on the structure, composition, and the mechanical and optical characteristics of niobium and tantalum oxide films.

    PubMed

    Cetinörgü-Goldenberg, Eda; Klemberg-Sapieha, Jolanta-Ewa; Martinu, Ludvik

    2012-09-20

    Optical, mechanical, and thermal properties of optical thin films are very important for a reliable device performance. In the present work, the effect of annealing on the stability and the characteristics of niobium and tantalum oxide films grown at room temperature (RT) by dual ion beam sputtering were studied. The refractive index (n(λ)), extinction coefficient (k(λ)), hardness (H), reduced Young's modulus (E(r)), and film stress (σ) were investigated as a function of the annealing temperature (T(A)). X-ray diffraction analysis showed that all as-deposited films were amorphous, and crystallization was observed only after annealing at 700°C. Compositional analyses confirmed that the atomic ratio of oxygen to metal in as-deposited and annealed films was close to 2.5, indicating that the films were stoichiometric pentoxides of Nb and Ta. The properties of Nb(2)O(5) and Ta(2)O(5) films were, respectively, affected by postdeposition annealing: n(λ) values (at 550 nm) decreased from 2.30 to 2.20 and from 2.14 to 2.08, the average H and E(r) values increased from 5.6 to 7.4 GPa, and from 121 to 132 GPa for Nb(2)O(5), and from 6.5 to 8.3 GPa, and from 132 to 144 GPa for Ta(2)O(5), and the initial low compressive stress for both materials changed to tensile. We explain the variation of the coating material properties in terms of film stoichiometry, crystallinity, electronic structure, and possible reactions at the film-substrate interface.

  20. Effect of annealing on the growth dynamics of ZnPc LB thin film and its surface morphology

    SciTech Connect

    Roy, Dhrubojyoti Das, Nayan Mani; Gupta, P. S.

    2014-07-15

    The ZnPc molecules in the thin film prepared by Langmuir-Blodgett (LB) process in asdeposited state has been found to have an edge on orientation with average tilt angle of 64.3 ° as confirmed from the Pressure-Area (π-A) isotherm and X-ray diffraction (XRD) study. The ZnPc LB thin film has been observed to have abnormal growth mode at higher annealing temperature and it is mainly driven by minimization of surface free energy which lead to large increase in crystallinity of the film. Kinetically favored orientational and structural transitions of ZnPc thin film during annealing and their effect on the surface morphology of the thin film has been studied using scaling concepts. The scaling exponents 1) root mean square (RMS) roughness σ, 2) roughness exponent α and, 3) in plane correlation length ξ are calculated from the HDCF g(r) and ACF C(r). The RMS surface roughness σ is found to be dependent on the as defined short wavelength undulations (ρ) and long wavelength undulations (χ). Both ρ and χ are the function of all the three scaling exponents. σ has been observed to be maximum for the ZnPc thin film annealed at 290 °C, since the χ shoot to maximum value at this temperature due to the formation of small domains of ZnPc nanorods. The self affinity of the ZnPc thin film is found to decrease on annealing as obtained from both power spectral density (PSD) and HDCF g(R) and ACF C(R) study, which confirms that the dimension of surface morphology of the ZnPc LB thin film transform towards 2D with increase in annealing temperature.

  1. Bismuth oxide thin films prepared by chemical bath deposition (CBD) method: annealing effect

    NASA Astrophysics Data System (ADS)

    Gujar, T. P.; Shinde, V. R.; Lokhande, C. D.; Mane, R. S.; Han, Sung-Hwan

    2005-08-01

    Bismuth oxide thin films have been deposited by room temperature chemical bath deposition (CBD) method and annealed at 623 K in air. They were characterized for structural, surface morphological, optical and electrical properties. From the X-ray diffraction patterns, it was found that after annealing a non-stoichiometric phase, Bi 2O 2.33, was removed and phase pure monoclinic Bi 2O 3 was obtained. Surface morphology of Bi 2O 3 film at lower magnification SEM showed rod-like structure, however, higher magnification showed a rectangular slice-like structure perpendicular to substrate, giving rise to microrods on the surface. The optical studies showed the decrease in band gap by 0.3 eV after annealing. The electrical resistivity variation showed semiconductor behavior and from thermoemf measurements, the electrical conductivity was found to be of n-type.

  2. Enhanced photocurrent density of hematite thin films on FTO substrates: effect of post-annealing temperature.

    PubMed

    Cho, Eun Soo; Kang, Myung Jong; Kang, Young Soo

    2015-06-28

    Fluorine doped tin oxide (FTO) is widely used as a substrate in the synthesis of a photo-reactive semiconductor electrode for solar water splitting. The hematite film on the surface of the FTO substrate annealed at 700 °C showed an enhanced photocurrent value with a maximum photocurrent of 0.39 mA cm(-2) at 1.23 V vs. RHE under 1 sun illumination. This is a much enhanced photocurrent value of the hematite films than that of those annealed at temperatures lower than 700 °C. This is a promising approach for the enhancement of the photoelectrochemical properties of metal oxide thin films. This work reports on the mechanism of the annealing process of the synthesized hematite film to enhance the photocurrent value. Furthermore, this can be used for the enhanced efficiency of the solar water splitting reaction. PMID:26032403

  3. Effects of Ni doping and structural defects on magnetic properties of annealed SiC films

    NASA Astrophysics Data System (ADS)

    Fu, Yuting; Jin, Xin; Sun, Ning; Li, Chunjing; An, Yukai; Liu, Jiwen

    2016-08-01

    Ni-doped SiC films deposited on Si (100) substrates prepared by RF-magnetron sputtering were discussed in this paper. The results show that with reference to the as-deposited as well as annealing at 800 °C. C atoms were substituted by Ni atoms in the 3Csbnd SiC lattice and Ni-related secondary phase cannot be detected. After annealing at 1200 °C, the crystal quality improved obviously while the majority of Ni atoms form the Ni2Si secondary phase. Temperature dependent on resistivity reveals that the conduction mechanism is dominated by Mott variable range hopping behavior for the Ni-doped SiC films, confirming that the carriers are localized. All the films are ferromagnetic at 300 K and annealing can evidently improve the room-temperature (RT) ferromagnetism. The bound magnetic polarons should be responsible for the RT ferromagnetism of the Ni-doped SiC films.

  4. Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

    NASA Technical Reports Server (NTRS)

    Johnson, E. S.; Compton, W. D.

    1971-01-01

    Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

  5. Unraveling the roles of thermal annealing and off-time duration in magnetic properties of pulsed electrodeposited NiCu nanowire arrays

    NASA Astrophysics Data System (ADS)

    Haji jamali, Z.; Almasi Kashi, M.; Ramazani, A.; Montazer, A. H.

    2015-05-01

    Magnetic alloy nanowires (ANWs) have long been studied owing to both their fundamental aspects and possible applications in magnetic storage media and magnetoresistance devices. Here, we report on the roles of thermal annealing and duration of off-time between pulses (toff) in crystalline characteristics and magnetic properties of arrays of pulsed electrodeposited NiCu ANWs (35 nm in diameter and a length of 1.2 μm), embedded in porous anodic alumina template. Increasing toff enabled us to increase the Cu content thereby fabricating NiCu ANWs with different crystallinity and alloy compositions. Although major hysteresis curve measurements showed no considerable change in magnetic properties before and after annealing, the first-order reversal curve (FORC) analysis provided new insights into the roles of thermal annealing and toff. In other words, FORC diagrams indicated the presence of low and high coercive field regions in annealed Ni-rich ANWs, coinciding with the increase in toff in as-deposited ANWs. The former has a small coercivity with strong demagnetizing magnetostatic interactions from neighboring NWs and may correspond to a soft magnetic phase. The latter has a greater coercivity with weak interactions, corresponding to a hard magnetic phase. On the other hand, for as-deposited and annealed Cu-rich NiCu ANWs, a mixed phase of the soft and hard segments could be found. Furthermore, a transition from the interacting Ni-rich to non-interacting Cu-rich ANWs took place with a magnetic field applied parallel to the NW axis. Thus, these arrays of ANWs with tunable magnetic phases and interactions may have potential applications in the nanoscale devices.

  6. Annealing effects on the structural and optical properties of β-Ga2O3 nanobelts synthesized by microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhu, Feng; Yang, ZhongXue; Zhou, WeiMin; Zhang, YaFei

    2006-06-01

    We have synthesized β-Ga2O3 nanobelts on the silicon substrates by microwave plasma chemical vapor deposition (MPCVD). The morphology and structure of β-Ga2O3 nanobelts characterized by scanning electron microscopy (SEM) were not influenced through the thermal annealing. The photoluminescence properties of β-Ga2O3 nanobelts measured under different excitation wavelength, annealing temperature and annealing time indicated that as-prepared and annealed nanobelts had a blue and an ultraviolet emission (under excitation wavelength of 250 nm at 316 and 432 nm, under excitation wavelength of 325 at 428 nm), but the relative peak intensities of ultraviolet and blue emission, respectively, increase and decrease by the thermal annealing.

  7. Effects of vacuum annealing treatment on microstructures and residual stress of AlSi10Mg parts produced by selective laser melting process

    NASA Astrophysics Data System (ADS)

    Chen, Tian; Wang, Linzhi; Tan, Sheng

    2016-07-01

    Selective laser melting (SLM)-fabricated AlSi10Mg parts were heat-treated under vacuum to eliminate the residual stress. Microstructure evolutions and tensile properties of the SLM-fabricated parts before and after vacuum annealing treatment were studied. The results show that the crystalline structure of SLM-fabricated AlSi10Mg part was not modified after the vacuum annealing treatment. Additionally, the grain refinement had occurred after the vacuum annealing treatment. Moreover, with increasing of the vacuum annealing time, the second phase increased and transformed to spheroidization and coarsening. The SLM-produced parts after vacuum annealing at 300∘C for 2 h had the maximum ultimate tensile strength (UTS), yield strength (YS) and elongation, while the elastic modulus decreased significantly. In addition, the tensile residual stress was found in the as-fabricated AlSi10Mg samples by the microindentation method.

  8. Effect of α-damage on fission-track annealing in zircon

    USGS Publications Warehouse

    Kasuya, Masao; Naeser, Charles W.

    1988-01-01

    The thermal stability of confined fission-track lengths in four zircon samples having different spontaneous track densities (i.e., different amounts of ??-damage) has been studied by one-hour isochronal annealing experiments. The thermal stability of spontaneous track lengths is independent of initial spontaneous track density. The thermal stability of induced track lengths in pre-annealed zircon, however, is significantly higher than that of spontaneous track lengths. The results indicate that the presence of ??-damage lowers the thermal stability of fission-tracks in zircon.

  9. The effect of α-damage on fission-track annealing in zircon

    USGS Publications Warehouse

    Kasuya, M.; Naeser, C.W.

    1988-01-01

    The thermal stability of confined fission-track lengths in four zircon samples having different spontaneous track densities (i.e. different amounts of ??-damage) has been studied by one hour isochronal annealing experiments. The thermal stability of spontaneous track lengths is independent of initial spontaneous track density. The thermal stability of induced track lengths in pre-annealed zircon, however, is significantly higher than that of spontaneous track lengths. The results indicate that the presence of ??-damage lowers the thermal stability of fission-tracks in zircon. ?? 1988.

  10. Synergistic Effects of Binary-Solvent Annealing for Efficient Polymer-Fullerene Bulk Heterojunction Solar Cells.

    PubMed

    Wu, Fu-Chiao; Li, Yi-Hao; Tsou, Chieh-Jen; Tung, Kuo-Cheng; Yen, Chia-Te; Chou, Fang-Sheng; Tang, Fu-Ching; Chou, Wei-Yang; Ruan, Jrjeng; Cheng, Horng-Long

    2015-09-01

    Conjugated polymer-fullerene-based bulk-heterojunction (BHJ) organic solar cells (OSCs) have attracted tremendous attention over the past two decades because of their potential to develop low-cost and easy methods to produce energy from light. The complicated microstructure and morphology with randomly organized architecture of these polymer-fullerene-based active layers (ALs) is a key factor that limits photovoltaic performance. In this study, a binary-solvent annealing (BSA) approach was established to improve the poly(3-hexylthiophene):indene-C60 bisadduct-based AL for efficient BHJ-type OSCs by varying the second solvents with different boiling points (BP). Thus, we were able to change the evaporation behavior of cosolvents and consequently obtain the various microstructural properties of the AL. An in-depth study was conducted on the solvent-evaporation driven morphology of the active layer under various cosolvent conditions and its effect on the photovoltaic parameters of OSCs. Under the BSA processes, we found that the specimens with low-BP second solvents allows us to observe a more ideal AL for increasing photon absorption and efficient charge transport and collection at the respective electrodes, resulting in enhanced PCE of the corresponding OSCs. By contrast, the specimens with high-BP second solvents exhibit random microstructures, which are detrimental to charge transport and collection and lead to diminished PCE of the corresponding OSCs. By appropriately selecting the composition of a binary solvent, BSA can be employed as an easy method for the effective manipulation of the microstructures of ALs. BSA is a promising technique for the performance enhancement of not only OSCs but also other organic/polymeric-based electronic devices. PMID:26267758

  11. Significant effects of hydrothermal condition and annealing atmosphere on the properties of Cu2ZnSn(Sx,Se1-x)4 films

    NASA Astrophysics Data System (ADS)

    Yu, Jianhua; Cao, Lei; Sui, Jing; Yang, Peng; Zhang, Qian; Dong, Hongzhou; Dong, Lifeng

    2016-01-01

    In this study, Cu2ZnSnS4 precursor films are directly fabricated on the surface of FTO glass substrates using a hydrothermal method, and then Cu2ZnSn(Sx,Se1-x)4 films are obtained through sulfurization or selenization annealing process. The influences of hydrothermal reaction time and annealing conditions on the morphology, crystallinity, energy band gap and photo-electrical performance of Cu2ZnSn(Sx,Se1-x)4 films are studied. The findings show that chemical compositions can be tuned via tailoring annealing conditions and photocurrent increases with the increase of hydrothermal reaction time and the introduction of Se.

  12. Defect chemical explanation for the effect of air anneal on CdS/CuInSe2 solar cell performance

    NASA Astrophysics Data System (ADS)

    Cahen, David; Noufi, Rommel

    1989-02-01

    We formulate a consistent defect chemical model of the effect of air/O2 anneals on CdS/CuInSe2 devices. The model centers on O-induced neutralization of (near) surface donor states in CuInSe2 grains. The simplest identification of these states is with ionized Se vacancies, due to coordinatively unsaturated In on grain surfaces and boundaries.

  13. Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators.

    PubMed

    Lee, Shuh Ying; Yoon, Soon Fatt; Ngo, Andrew Cy; Guo, Tina

    2013-01-01

    In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely with the annealing temperature. Most importantly, the 3-dB response of the 750°C-annealed lumped-element QD-EAM was found to be 1.6 GHz at zero reverse bias voltage - the lowest reverse bias voltage reported. We believe that this work will be beneficial to researchers working on on-chip integration of QD-EAMs with other devices since energy consumption will be an important consideration.

  14. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    SciTech Connect

    Dikareva, N. V. Vikhrova, O. V.; Zvonkov, B. N.; Malekhonova, N. V.; Nekorkin, S. M.; Pirogov, A. V.; Pavlov, D. A.

    2015-01-15

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.

  15. Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO₂ superlattices

    SciTech Connect

    López-Vidrier, J. Hernández, S.; López-Conesa, L.; Peiró, F.; Garrido, B.; Hiller, D.; Gutsch, S.; Zacharias, M.; Estradé, S.

    2014-10-07

    The effect of the annealing temperature and the SiO₂ barrier thickness of silicon nanocrystal (NC)/SiO₂ superlattices (SLs) on their structural and optical properties is investigated. Energy-filtered transmission electron microscopy (TEM) revealed that the SL structure is maintained for annealing temperatures up to 1150 °C, with no variation on the nanostructure morphology for different SiO₂ barrier thicknesses. Nevertheless, annealing temperatures as high as 1250 °C promote diffusion of Si atoms into the SiO₂ barrier layers, which produces larger Si NCs and the loss of the NC size control expected from the SL approach. Complementary Raman scattering measurements corroborated these results for all the SiO₂ and Si-rich oxynitride layer thicknesses. In addition, we observed an increasing crystalline fraction up to 1250 °C, which is related to a decreasing contribution of the suboxide transition layer between Si NCs and the SiO₂ matrix due to the formation of larger NCs. Finally, photoluminescence measurements revealed that the emission of the superlattices exhibits a Gaussian-like lineshape with a maximum intensity after annealing at 1150 °C, indicating a high crystalline degree in good agreement with Raman results. Samples submitted to higher annealing temperatures display a progressive emission broadening, together with an increase in the central emission wavelength. Both effects are related to a progressive broadening of the size distribution with a larger mean size, in agreement with TEM observations. On the other hand, whereas the morphology of the Si NCs is unaffected by the SiO₂ barrier thickness, the emission properties are slightly modified. These observed modifications in the emission lineshape allow monitoring the precipitation process of Si NCs in a direct non-destructive way. All these experimental results evidence that an annealing temperature of 1150 °C and 1-nm SiO₂ barrier can be reached whilst preserving the SL structure, being

  16. The effect of high-temperature annealing on the structure and electrical properties of well-aligned carbon nanotubes

    SciTech Connect

    Gong Qianming . E-mail: gongqianming@mail.tsinghua.org.cn; Li Zhi; Wang Ye; Wu Bin; Zhang Zhengyi; Liang Ji

    2007-03-22

    Systematic work has been performed on the effect of high-temperature annealing on structural defects and impurities of well-aligned carbon nanotubes (ACNTs) in this paper. ACNTs had been prepared by CVD process with ferrocene as catalyst and then the as-grown samples were experienced heat treatment (HT) from 1800 to 3000 deg. C. X-ray diffraction, Raman spectroscopy and electron dispersive spectroscopy (EDS), etc., have been used to analyze the effect of annealing. Results indicate that some impurities can be removed once annealing temperature exceeds vaporization point of corresponding metal or non-metal. Desorption of O should be attributed to reduced active sites of dangling covalent bonds after heat treatment. Specious discrepancy about interlayer spacing resulted from XRD and Raman tests show that although high-temperature heat treatment can remove in-plane defects of carbon nanotubes greatly, interlayer spacing between graphene shells could not be reduced effectively because of the special concentric cylindrical structure of nanotubes. Electrical resistivity of ACNTs block is about three orders higher than that of copper even after HT at 3000 deg. C, and the anisotropy of electrical properties increased once experienced heat treatment at increased temperature.

  17. Annealing Effects on the Surface Plasmon of MgO Implanted with Gold

    NASA Technical Reports Server (NTRS)

    Ueda, A.; Mu, R.; Tung, Y. -S.; Henderson, D. O.; White, C. W.; Zuhr, R. A.; Zhu, Jane G.; Wang, P. W.

    1997-01-01

    Gold ion implantation was carried out with the energy of 1.1 MeV into (100) oriented MgO single crystal. Implanted doses are 1, 3, 6, 10 x 10(exp 16) ions/sq cm. The gold irradiation results in the formation of gold ion implanted layer with a thickness of 0.2 microns and defect formation. In order to form gold colloids from the as-implanted samples, we annealed the gold implanted MgO samples in three kinds of atmospheres: (1)Ar only, (2)H2 and Ar, and (3)O2 and Ar. The annealing over 1200 C enhanced the gold colloid formation which shows surface plasmon resonance band of gold. The surface plasmon bands of samples annealed in three kinds of atmospheres were found to be at 535 nm (Ar only), 524 nm(H2+Ar), and 560 nm (02+Ar), The band positions of surface plasmon can be reversibly changed by an additional annealing.

  18. Simulated annealing model of acupuncture

    NASA Astrophysics Data System (ADS)

    Shang, Charles; Szu, Harold

    2015-05-01

    The growth control singularity model suggests that acupuncture points (acupoints) originate from organizers in embryogenesis. Organizers are singular points in growth control. Acupuncture can cause perturbation of a system with effects similar to simulated annealing. In clinical trial, the goal of a treatment is to relieve certain disorder which corresponds to reaching certain local optimum in simulated annealing. The self-organizing effect of the system is limited and related to the person's general health and age. Perturbation at acupoints can lead a stronger local excitation (analogous to higher annealing temperature) compared to perturbation at non-singular points (placebo control points). Such difference diminishes as the number of perturbed points increases due to the wider distribution of the limited self-organizing activity. This model explains the following facts from systematic reviews of acupuncture trials: 1. Properly chosen single acupoint treatment for certain disorder can lead to highly repeatable efficacy above placebo 2. When multiple acupoints are used, the result can be highly repeatable if the patients are relatively healthy and young but are usually mixed if the patients are old, frail and have multiple disorders at the same time as the number of local optima or comorbidities increases. 3. As number of acupoints used increases, the efficacy difference between sham and real acupuncture often diminishes. It predicted that the efficacy of acupuncture is negatively correlated to the disease chronicity, severity and patient's age. This is the first biological - physical model of acupuncture which can predict and guide clinical acupuncture research.

  19. Effects of annealing treatment and gamma irradiation on the absorption and fluorescence spectra of Cr:GSGG laser crystal

    NASA Astrophysics Data System (ADS)

    Sun, D. L.; Luo, J. Q.; Xiao, J. Z.; Zhang, Q. L.; Jiang, H. H.; Yin, S. T.; Wang, Y. F.; Ge, X. W.

    2008-09-01

    The influence of annealing treatments and gamma-ray irradiation on the absorption and fluorescence spectra of Cr:GSGG crystals grown by the Czochralski method has been investigated. Two absorption bands located near 686 nm and 1050 nm were weakened markedly after the crystal was re-annealed in H2 atmosphere, which is due to the Cr4+ ions being de-oxidized into Cr3+ ions. The other two weak additional absorption bands induced by gamma-ray irradiation appearing near 310 nm and 480 nm are ascribed to the Fe2+ ions and F-type color centers, respectively. In particular, the gamma-ray irradiation with a dose of 100 Mrad has an effect of improving slightly the luminescence properties of Cr:GSGG crystals. The improvement mechanism is analyzed and discussed.

  20. Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering

    PubMed Central

    2012-01-01

    Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al2O3 (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (Eg) of the AZO films was increased with increasing the NIR energy efficiency. PMID:22673232

  1. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    SciTech Connect

    Saxena, Nupur Kumar, Pragati; Gupta, Vinay

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  2. Effect of moderate magnetic annealing on the microstructure, quasi-static and viscoelastic mechanical behavior of a structural epoxy

    SciTech Connect

    Tehrani, Mehran; Al-Haik, Marwan; Garmestani, Hamid; Li, Dongsheng

    2012-01-01

    In this study the effect of moderate magnetic fields on the microstructure of a structural epoxy system was investigated. The changes in the microstructure have been quantitatively investigated using wide angle x-ray diffraction (WAXD) and pole figure analysis. The mechanical properties (modulus, hardness and strain rate sensitivity parameter) of the epoxy system annealed in the magnetic field were probed with the aid of instrumented nanoindentation and the results are compared to the reference epoxy sample. To further examine the creep response of the magnetically annealed and reference samples, short 45 min duration creep tests were carried out. An equivalent to the macro scale creep compliance was calculated using the aforementioned nano-creep data. Using the continuous complex compliance (CCC) analysis, the phase lag angle, tan (δ), between the displacement and applied force in an oscillatory nanoindentation test was measured for both neat and magnetically annealed systems through which the effect of low magnetic fields on the viscoelastic properties of the epoxy was invoked. The comparison of the creep strain rate sensitivity parameter , A/d(0), from short term(80 ), creep tests and the creep compliance J(t) from the long term(2700 s) creep tests with the tan(δ) suggests that former parameter is a more useful comparative creep parameter than the creep compliance. The results of this investigation reveal that under low magnetic fields both the quasi-static and viscoelastic mechanical properties of the epoxy have been improved.

  3. Effect of thermal annealing on structural, optical and electrical properties of RF reactive magnetron sputtered CdO thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Gadipelly Anil; Ramana Reddy, Musugu; Narasimha Reddy, Katta

    2014-10-01

    Recently, there has been a lot of interest on transparent conducting oxide (TCO) materials which have common application in solar cells and some optoelectronic devices. In this work, cadmium oxide (CdO) thin films have been deposited on glass substrates by RF reactive magnetron sputtering technique and subsequently annealed in air from 200 °C to 500 °C. The effect of annealing temperature on the structural, morphological, optical and electrical properties of CdO films is systematically investigated by X-ray diffraction, scanning electron microscopy with energy dispersive spectroscopy, atomic force microscopy, UV-visible spectrophotometer and Hall effect measurements. X-ray diffraction (XRD) studies showed that the films are polycrystalline in nature with a preferential orientation along (2 0 0) plane. Atomic force microscopy studies showed that these films are very smooth with maximum root mean square roughness of 3.13 nm. The CdO films formed at annealing temperature of 400 °C exhibited optical transmittance of 84%, electrical resistivity of 1.9 × 10-3 Ω cm and figure of merit of 1.8 × 10-3 Ω-1.

  4. A rapid response time and highly sensitive amperometric glucose biosensor based on ZnO nanorod via citric acid-assisted annealing route

    NASA Astrophysics Data System (ADS)

    Yang, Zao; Ye, Zhizhen; Zhao, Binghui; Zong, Xiaolin; Wang, Ping

    2010-04-01

    ZnO nanorods were synthesized by citric acid-assisted annealing route. In a phosphate buffer solution with a pH value of 7.4, glucose oxidase was immobilized on the surface of ZnO nanorod through chitosan-assisted cross-linking technique. The one-dimensional ZnO nanorods provide a large effective surface area with high surface-to-volume ratio and provide a favorable environment for the immobilization of GO x. The response time of this biosensor is less than 2 s. This biosensor has a very high sensitivity of 25.7 μA cm -2 mM -1. The low detection limit was estimated to be 0.01 mM. Two linear response ranges are 0.01-0.25 mM and 0.3-0.7 mM. The Michaelis-Menten constant is found to be 1.95 mM. These results demonstrate that zinc oxide nanorods have potential applications in biosensors.

  5. Electrodeposition on Ni from a Sulfamate Electrolyte Part 1: Effect of a Stress Relief on Annealing Behavior and Film Metallurgy

    SciTech Connect

    James J. Kelly

    2002-02-01

    Ni and Ni alloys are being developed as baseline materials for LIGA technology and prototyping at Sandia National Laboratories. A conventional, additive-free sulfamate electrolyte has been chosen for pure Ni electrodeposition due to its simplicity and ability to produce ductile, low-stress films. When depositing certain Ni alloys, saccharin is typically employed as an electrolyte bath additive. While saccharin is well known and effective as a stress reliever, it has a significant impact on the microstructure of the deposit and its annealing behavior. The electrodeposition of pure Ni in the presence of saccharin is studied here to understand its effects in the absence of an alloying element (such as Co or Fe). The grain structure and Vickers hardness of Ni deposited with and without saccharin on a rotating disk electrode were all found to be consistent with previous studies available in the literature. The following observations were made: (1) The fine, columnar morphology obtained without saccharin became an equiaxed, nano-sized grain structure with saccharin (from {approx}1.5 {micro}m to {approx}40 nm nominal grain size, respectively). The grain refinement resulting from saccharin is not accompanied with an increase in film stress, in contrast to the grain refinement associated with certain Ni alloys. (2) A change in the deposit texture from weak (210) to (111) along the film growth direction with the addition of saccharin. (3) An increase in Vickers hardness by a factor of {approx}2 (from {approx}170 to {approx}320) upon the addition of saccharin. (4) A rapid decrease in hardness with annealing from the high, as-deposited values for films deposited with saccharin to a value lower than that of annealed Ni from an additive-free bath. (5) Accelerated grain growth during annealing for films deposited with saccharin; this has not been observed previously in the literature to the authors' best knowledge.

  6. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    SciTech Connect

    Mesquita, Anderson Fuzer; Porto, Arilza de Oliveira; Magela de Lima, Geraldo; Paniago, Roberto; Ardisson, José Domingos

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Synthesis of cadmium and tin telluride. ► Chemical route to obtain pure crystalline cadmium and tin telluride. ► Effect of the annealing temperature on the crystalline phases. ► Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

  7. Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition

    SciTech Connect

    Ku, Ching-Shun; Cheng, Ching-Yuan; Huang, Jheng-Ming; Lin, Chih-Ming; Lee, Hsin-Yi

    2010-11-01

    Optical and structural properties of n-ZnO films grown on a p-Si (111) substrate by atomic layer deposition were observed using in situ synchrotron x-ray diffraction during annealing. The photoluminescence showed a complicated photon response with increasing annealing temperature. In situ x-ray diffraction indicated the growth of grains for an annealing temperature from 500 to 800 deg. C with the orientation altering from polycrystalline to preferential (200). Measurements with a time-of-flight secondary-ion mass spectrometer indicated that the outgassing of hydrogen atoms and ZnO/Si interdiffusion behavior were correlated with the intensity and position of emissions in photoluminescence spectra.

  8. Effect of laser annealing using high repetition rate pulsed laser on optical properties of phosphorus-ion-implanted ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Shimogaki, Tetsuya; Ofuji, Taihei; Tetsuyama, Norihiro; Okazaki, Kota; Higashihata, Mitsuhiro; Nakamura, Daisuke; Ikenoue, Hiroshi; Asano, Tanemasa; Okada, Tatsuo

    2013-03-01

    The effect of high repetition rate pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus-ion-implanted zinc oxide nanorods has been investigated. The recovery levels of phosphorus-ion-implanted zinc oxide nanorods have been measured by photoluminescence spectra and cathode luminescence images. Cathode luminescence disappeared over 300 nm below the surface due to the damage caused by ion implantation with an acceleration voltage of 25 kV. When the annealing was performed at a low repetition rate of the KrF excimer laser, cathode luminescence was recovered only in a shallow area below the surface. The depth of the annealed area was increased along with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded in annealing the whole damaged area of over 300 nm in depth and in observing cathode luminescence. Thus, the effectiveness of high repetition rate pulsed laser annealing on phosphorus-ion-implanted zinc oxide nanorods was demonstrated.

  9. Effect of laser annealing using high repetition rate pulsed laser on optical properties of phosphorus-ion-implanted ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Shimogaki, Tetsuya; Ofuji, Taihei; Tetsuyama, Norihiro; Okazaki, Kota; Higashihata, Mitsuhiro; Nakamura, Daisuke; Ikenoue, Hiroshi; Asano, Tanemasa; Okada, Tatsuo

    2014-02-01

    The effect of high repetition rate pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus-ion-implanted zinc oxide nanorods has been investigated. The recovery levels of phosphorus-ion-implanted zinc oxide nanorods have been measured by photoluminescence spectra and cathode luminescence images. Cathode luminescence disappeared over 300 nm below the surface due to the damage caused by ion implantation with an acceleration voltage of 25 kV. When the annealing was performed at a low repetition rate of the KrF excimer laser, cathode luminescence was recovered only in a shallow area below the surface. The depth of the annealed area was increased along with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded in annealing the whole damaged area of over 300 nm in depth and in observing cathode luminescence. Thus, the effectiveness of high repetition rate pulsed laser annealing on phosphorus-ion-implanted zinc oxide nanorods was demonstrated.

  10. Effect of annealing temperature on the structural and optical properties of CeO2:Ni thin films

    NASA Astrophysics Data System (ADS)

    Murugan, R.; Vijayaprasath, G.; Sakthivel, P.; Mahalingam, T.; Ravi, G.

    2016-05-01

    High quality Ni-doped CeO2 (CeO2:Ni) thin films were deposited on glass substrates at room temperature by using radio frequency magnetron sputtering. The effect of annealing temperature on structural and optical properties of the CeO2:Ni films was investigated. The structural, optical and vibrational properties of the films were determined using X-ray diffraction (XRD), photoluminescence spectrometer (PL) and Raman spectrometer. It was found that the as-deposited film has a fluorite cubic structure. By increasing annealing temperature from 100°C to 300°C, the crystalline quality of the thin films could be improved. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton, defect related emissions respectively. The micro-Raman results show the characteristic peak of CeO2 F2g at 465 cm-1 and 2L0 at 1142 cm-1. Defect peaks like D and 0 bands were observed at 641 cm-1 and 548 cm-1 respectively. It is found from the spectra that the peak intensity of the films increased with increase of annealing temperature.

  11. Effects of annealing temperature on optical, morphological, and electrical characteristics of polyfluorene-derivative thin films on ITO glass substrate.

    PubMed

    Lim, Way Foong; Quah, Hock Jin; Hassan, Zainuriah

    2016-02-20

    The effects of postdeposition annealing temperature (125°C-200°C) toward optical, morphological, and electrical characteristics of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-phenylene)] end capped with dimethylphenyl group deposited on indium tin oxide glass substrates were investigated. Green and red-infrared photoluminescence emissions, originating from П-conjugation aggregates and keto-type defects did not attenuate the intensity of the blue emission peak. This suggested that the aggregates and defects might serve as local traps for radiative recombination. In samples annealed at 125°C-175°C, a decreasing optical energy gap (E(g)) that decreased barrier height as well as an increasing amount of traps have increased current conduction via thermionic emission and trap-assisted tunneling. Nonetheless, an acquisition of the largest E(g) and amount of traps testified that thermionic emission was dominating current conduction, surpassing trap-assisted tunneling in samples annealed at 200°C. PMID:26906569

  12. Anisotropic electrical resistivity and oxygen annealing effect on it in La2- xCaxCuO4 single crystals

    NASA Astrophysics Data System (ADS)

    Khan, M. K. R.; Mori, Yoshihiro; Tanaka, Isao; Kojima, Hironao

    1994-12-01

    The oxygen annealing effect on the temperature-dependent electrical resistivity has been studied in La 1.91Ca 0.09CuO 4- y single crystals grown by the TSFZ method. In as-grown crystals, semiconducting-like electrical conduction has been observed, both in the ab-plane and the c-axis at the non-superconducting state. The onset transition temperature Tc-onset was about 17.5 K. After annealing in oxygen, ϱ ab( T) becomes metallic and shows a resistivity minimum at a certain temperature Tmin that separates regions of metallic behavior at T> Tmin from semiconducting behavior at T< Tmin, while ϱ c( T) remains semiconducting. In the low-temperature region, an upward curvature of the resistivity (ϱ ab( T)) has been observed with decreasing temperature below Tmin. This is an indication of the occurence of weak electron localization due to the randomness of the oxygen distribution the crystal lattice caused by oxygen deficiency that might still be present in the annealed samples. The Anderson-Zou fit to the data works well in metallic samples and the variable range hopping law (VRH) in non-metallic samples.

  13. Effects of annealing temperature on optical, morphological, and electrical characteristics of polyfluorene-derivative thin films on ITO glass substrate.

    PubMed

    Lim, Way Foong; Quah, Hock Jin; Hassan, Zainuriah

    2016-02-20

    The effects of postdeposition annealing temperature (125°C-200°C) toward optical, morphological, and electrical characteristics of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-phenylene)] end capped with dimethylphenyl group deposited on indium tin oxide glass substrates were investigated. Green and red-infrared photoluminescence emissions, originating from П-conjugation aggregates and keto-type defects did not attenuate the intensity of the blue emission peak. This suggested that the aggregates and defects might serve as local traps for radiative recombination. In samples annealed at 125°C-175°C, a decreasing optical energy gap (E(g)) that decreased barrier height as well as an increasing amount of traps have increased current conduction via thermionic emission and trap-assisted tunneling. Nonetheless, an acquisition of the largest E(g) and amount of traps testified that thermionic emission was dominating current conduction, surpassing trap-assisted tunneling in samples annealed at 200°C.

  14. Effect of annealing on the properties of nanocrystalline CuInSSe thin films deposited by spray pyrolysis

    SciTech Connect

    Shrotriya, Vipin Rajaram, P.

    2015-08-28

    The effect of annealing CuInSSe thin films, which were grown on glass substrates using the spray pyrolysis technique from spray solutions having S/Se ionic ratio 0.6, were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical transmission measurements. The CuInSSe films were co-deposited from an aqueous solution containing CuCl{sub 2}, InCl{sub 3}, thiourea and SeO{sub 2}. EDC was used as a complexing agent and films were deposited at the constant temperature 300°C. Post annealing (at 350°C) was used to improve the structural, morphological and optical properties of CuInSSe thin films. From the results, it is found that the films are single phase, p-type in conductivity having the chalcopyrite structure. From the Scherrer formula the average size of the films was found to be in the range (15-28) nm. Optical studies show that the optical band gap value increases slightly from 1.35 eV to 1.37 eV with annealing for films grown from spray solutions having S/Se ionic ratio 0.6.

  15. Effect of thermal annealing on structural and optical properties of In{sub 2}S{sub 3} thin films

    SciTech Connect

    Choudhary, Sonu

    2015-08-28

    There is a highly need of an alternate of toxic materials CdS for solar cell applications and indium sulfide is found the most suitable candidate to replace CdS due to its non-toxic and environmental friendly nature. In this paper, the effect of thermal annealing on the structural and optical properties of indium sulfide (In{sub 2}S{sub 3}) thin films is undertaken. The indium sulfide thin films of 121 nm were deposited on glass substrates employing thermal evaporation method. The films were subjected to the X-ray diffractometer and UV-Vis spectrophotometer respectively for structural and optical analysis. The XRD pattern show that the as-deposited thin film was amorphous in nature and crystallinity is found to be varied with annealing temperature. The optical analysis reveals that the optical band gap is varied with annealing. The optical parameters like absorption coefficient, extinction coefficient and refractive index were calculated. The results are in good agreement with available literature.

  16. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    SciTech Connect

    Phuan, Yi Wen; Chong, Meng Nan; Zhu, Tao; Yong, Siek-Ting; Chan, Eng Seng

    2015-09-15

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600

  17. Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

    SciTech Connect

    Ha, Tae-Jun

    2015-03-15

    Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

  18. Annealing effects on recombinative activity of nickel at direct silicon bonded interface

    SciTech Connect

    Kojima, Takuto Ohshita, Yoshio; Yamaguchi, Masafumi

    2015-09-15

    By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.

  19. The effect of annealing on the structural and magnetic properties of Ni-ferrite nanocrystals

    SciTech Connect

    Ojha, Chaturbhuj Chauhan, S. S.; Shrivastava, A. K.; Verma, A. K.

    2015-06-24

    Magnetic nanoparticles NiFe{sub 2}O{sub 4} were prepared by chemical co-precipitation technique using the chlorides of Ni, Fe (III) and oleic acid. The precursors were annealed at different temperature 500, 700, and 900 °C. The XRD of samples show the presence of inverse cubic spinel structure. Grain size was determined using Scherrer formula and SEM technique. The Particle size, Lattice parameter and X-ray density were also estimated from X-ray diffraction data. The particles size was found to vary from 17nm to 37 nm and largely depends on the annealing temperature. Magnetization measurements have also carried out using VSM and it was found that saturation magnetization (Ms), Remanance (Mr) and coercivity (H{sub c}) of nano ferrite materials are lower compared to bulk materials.

  20. Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

    SciTech Connect

    Pastor, A. A.; Prokhorova, U. V.; Serdobintsev, P. Yu.; Chaldyshev, V. V. Yagovkina, M. A.

    2013-08-15

    GaAs samples grown by molecular-beam epitaxy at low (230 Degree-Sign C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600 Degree-Sign C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 {+-} 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly As{sub Ga} antisite defects. According to X-ray diffraction and steady-state optical absorption data, the As{sub Ga} concentration in the samples is 3 Multiplication-Sign 10{sup 19} cm{sup -3}, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600 Degree-Sign C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 {+-} 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions.

  1. Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

    SciTech Connect

    Do, Woori; Jin, Won-Beom; Choi, Jungwan; Bae, Seung-Muk; Kim, Hyoung-June; Kim, Byung-Kuk; Park, Seungho; Hwang, Jin-Ha

    2014-10-15

    Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.

  2. Effects of post-annealing temperature on the properties of ZnO nanorods grown on homogenous seed-layers by using the hydrothermal method

    NASA Astrophysics Data System (ADS)

    Yim, Kwang Gug; Kim, Min Su; Kim, Soaram; Leem, Jae-Young; Nam, Giwoong; Jeon, Su Min; Lee, Dong-Yul; Kim, Jin Soo; Kim, Jong Su; Lee, Joo In

    2012-05-01

    ZnO nanorods were grown on Si substrates by using the hydrothermal method; then, they were post-annealed at various temperatures ranging from 573 to 973 K. The effects of post-annealing temperature on the structural and the optical properties were investigated by using scanning electron microscopy (SEM), X-ray diffraction, and photoluminescence (PL). After the post-annealing process, small pores had been formed on the surface of the ZnO nanorods without any change in the shape of the ZnO nanorods. A tensile stress was observed in the as-grown and the post-annealed ZnO nanorods. The PL intensity ratio of the near-band-edge emission (NBE) to the deep-level emission (DLE) was enhanced, and the DLE peak shifted from yellow to orange emission with increasing post-annealing temperature. The activation energy of the post-annealed ZnO nanorods was increased by the post-annealing process.

  3. Annealing effects on microstructure and laser-induced damage threshold of HfO2/SiO2 multilayer mirrors.

    PubMed

    Jena, Shuvendu; Tokas, Raj Bahadur; Rao, K Divakar; Thakur, Sudhakar; Sahoo, Naba Kishore

    2016-08-01

    HfO2/SiO2 periodic multilayer high reflection mirrors have been prepared by a reactive electron-beam evaporation technique. The deposited mirrors were annealed in the temperature range from 300°C to 500°C. The effects of annealing on optical, microstructural, and laser-induced damage characteristics of the mirrors have been investigated. The high reflection band of the mirror shifts toward a shorter wavelength with increasing annealing temperature. As-deposited and annealed mirrors show polycrystalline structure with a monoclinic phase of HfO2. Crystalinity and grain size increase upon annealing. The laser-induced damage threshold (LIDT) has been assessed using a 532 nm pulsed laser at a pulse width of 7 ns. The LIDT value of the multilayer mirror increases from 44.1  J/cm2 to 77.6  J/cm2 with annealing up to 400°C. The improvement of LIDT with annealing is explained through oxygen vacancy defects as well as grain-size-dependent thermal conductivity. Finally, the observed laser damage morphology, such as circular scalds and ablated multilayer stacks with terrace structure, are analyzed. PMID:27505395

  4. Annealing effects on microstructure and laser-induced damage threshold of HfO2/SiO2 multilayer mirrors.

    PubMed

    Jena, Shuvendu; Tokas, Raj Bahadur; Rao, K Divakar; Thakur, Sudhakar; Sahoo, Naba Kishore

    2016-08-01

    HfO2/SiO2 periodic multilayer high reflection mirrors have been prepared by a reactive electron-beam evaporation technique. The deposited mirrors were annealed in the temperature range from 300°C to 500°C. The effects of annealing on optical, microstructural, and laser-induced damage characteristics of the mirrors have been investigated. The high reflection band of the mirror shifts toward a shorter wavelength with increasing annealing temperature. As-deposited and annealed mirrors show polycrystalline structure with a monoclinic phase of HfO2. Crystalinity and grain size increase upon annealing. The laser-induced damage threshold (LIDT) has been assessed using a 532 nm pulsed laser at a pulse width of 7 ns. The LIDT value of the multilayer mirror increases from 44.1  J/cm2 to 77.6  J/cm2 with annealing up to 400°C. The improvement of LIDT with annealing is explained through oxygen vacancy defects as well as grain-size-dependent thermal conductivity. Finally, the observed laser damage morphology, such as circular scalds and ablated multilayer stacks with terrace structure, are analyzed.

  5. Estimation of effective temperatures in quantum annealers for sampling applications: A case study with possible applications in deep learning

    NASA Astrophysics Data System (ADS)

    Benedetti, Marcello; Realpe-Gómez, John; Biswas, Rupak; Perdomo-Ortiz, Alejandro

    2016-08-01

    An increase in the efficiency of sampling from Boltzmann distributions would have a significant impact on deep learning and other machine-learning applications. Recently, quantum annealers have been proposed as a potential candidate to speed up this task, but several limitations still bar these state-of-the-art technologies from being used effectively. One of the main limitations is that, while the device may indeed sample from a Boltzmann-like distribution, quantum dynamical arguments suggest it will do so with an instance-dependent effective temperature, different from its physical temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the learning of a special class of a restricted Boltzmann machine embedded on quantum hardware, which can serve as a building block for deep-learning architectures. We also provide a comparison to k -step contrastive divergence (CD-k ) with k up to 100. Although assuming a suitable fixed effective temperature also allows us to outperform one-step contrastive divergence (CD-1), only when using an instance-dependent effective temperature do we find a performance close to that of CD-100 for the case studied here.

  6. Effect of annealing on electronic carrier transport properties of gamma-irradiated AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Yadav, Anupama; Schwarz, Casey; Shatkhin, Max; Wang, Luther; Flitsiyan, Elena; Chernyak, Leonid; Liu, Lu; Hwang, Ya; Ren, Fan; Pearton, Stephen; Department of Physics, University of Central Florida Collaboration; Department of Chemical Engineering, University of Florida Collaboration; Department of Materials Science; Engineering, University of Florida Collaboration

    2014-03-01

    AlGaN/GaN High Electron Mobility Transistors were irradiated with 60Co gamma-ray doses from 100Gy to 1000Gy, in order to analyze the effects of irradiation on the devices' transport properties. Temperature dependent Electron Beam Induced Current (EBIC) measurements, conducted on the devices before and after exposure to gamma-irradiation, allowed for the obtaining of activation energy related to radiation-induced defects due to nitrogen vacancies. Later, the devices were annealed at 200o C for 25 minutes. All the measurements were performed again to study the effect of annealing on the gamma-irradiated devices. Annealing of gamma-irradiated transistors shows that partial recovery of device performance is possible at this temperature. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation and annealing on transfer, gate and drain characteristics.

  7. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  8. Effect of annealing temperature on the structure and optical parameters of Ge{sub 20}Se{sub 50}Te{sub 30} thin films

    SciTech Connect

    Mohamed, Mansour

    2015-05-15

    Highlights: • The amorphous nature of as prepared Ge{sub 20}Se{sub 50}Te{sub 30} films was confirmed by XRD. • The thermal annealing was found to affect the structure and optical parameter. • Thermal annealing resulted in an appearance of crystalline phases in studied films. • The average particle size increased with increasing the annealing temperature. • The indirect band gap was found to decrease with increasing annealing temperature. - Abstract: Bulk glasses and thin films of Ge{sub 20}Se{sub 50}Te{sub 30} were prepared by melt-quenching and thermal evaporation technique, respectively. The stoichiometry of the composition was checked by energy dispersive X-ray diffraction (EDX), whereas the crystallization was investigated using differential scanning calorimetery (DSC). The effect of heat treatment on the structure transformation of Ge{sub 20}Se{sub 50}Te{sub 30} films was determined by X-ray diffraction (XRD). The XRD results reveal that the as-prepared films are amorphous in nature while the annealed ones show crystalline phases. Further, the average crystallite size, strain, and dislocation density were found to depend on the annealing temperature. The optical transmittance and reflectance of the studied films at different annealing temperatures were measured using spectrophotometer. The optical parameters were calculated as a function of annealing temperature. The optical transition was found to be allowed indirect transition with optical band gap decreases from 1.69 to 1.41 eV with increasing the annealing temperature from 553 to 633 K.

  9. Effect of intermediate annealing on the microstructure and mechanical property of ZK60 magnesium alloy produced by twin roll casting and hot rolling

    SciTech Connect

    Chen, Hongmei; Zang, Qianhao; Yu, Hui; Zhang, Jing; Jin, Yunxue

    2015-08-15

    Twin roll cast (designated as TRC in short) ZK60 magnesium alloy strip with 3.5 mm thickness was used in this paper. The TRC ZK60 strip was multi-pass rolled at different temperatures, intermediate annealing heat treatment was performed when the thickness of the strip changed from 3.5 mm to 1 mm, and then continued to be rolled until the thickness reached to 0.5 mm. The effect of intermediate annealing during rolling process on microstructure, texture and room temperature mechanical properties of TRC ZK60 strip was studied by using OM, TEM, XRD and electronic universal testing machine. The introduction of intermediate annealing can contribute to recrystallization in the ZK60 sheet which was greatly deformed, and help to reduce the stress concentration generated in the rolling process. Microstructure uniformity and mechanical properties of the ZK60 alloy sheet were also improved; in particular, the room temperature elongation was greatly improved. When the TRC ZK60 strip was rolled at 300 °C and 350 °C, the room temperature elongation of the rolled sheet with 0.5 mm thickness which was intermediate annealed during the rolling process was increased by 95% and 72% than that of no intermediate annealing, respectively. - Highlights: • Intermediate annealing was introduced during hot rolling process of twin roll cast ZK60 alloy. • Intermediate annealing can contribute to recrystallization and reduce the stress concentration in the deformed ZK60 sheet. • Microstructure uniformity and mechanical properties of the ZK60 sheet were improved, in particular, the room temperature elongation. • The elongation of the rolled ZK60 sheet after intermediate annealed was increased by 95% and 72% than that of no intermediate annealing.

  10. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature

    PubMed Central

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications. PMID:25520589

  11. Effect of annealing atmosphere on photoluminescence and gas sensing of solution-combustion-synthesized Al, Pd co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Li, Yan; Liu, Min; Lv, Tan; Wang, Qiong; Zou, Yun-ling; Lian, Xiao-xue; Liu, Hong-peng

    2015-11-01

    Al, Pd co-doped ZnO nanoparticles (NPs) synthesized using a solution combustion method and subsequent annealing process under various atmospheres, including air, nitrogen, and hydrogen, were characterized using x-ray diffraction, energy-dispersive x-ray spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The gas-sensing properties of the sensors based on the NPs were also examined. The results indicated that the Al, Pd co-doped ZnO NPs, with an average crystallite size of 10 nm, exhibited enhanced gas-sensing performance compared with that of pure ZnO and Al-doped ZnO. The response of the Al, Pd co-doped ZnO NPs annealed in N2 to ethanol (49.22) was nearly 5.7 times higher than that to acetone (8.61) and approximately 20 - 27 times higher than that to benzene (2.38), carbon monoxide (2.23), and methane (1.78), which demonstrates their excellent selectivity to ethanol versus other gases. This high ethanol response can be attributed to the combined effects of the small size, Schottky barrier, lattice defects, and catalysis. [Figure not available: see fulltext.

  12. Combined effect of non-equilibrium solidification and thermal annealing on microstructure evolution and hardness behavior of AZ91 magnesium alloy

    NASA Astrophysics Data System (ADS)

    Zhou, Z. Z.; Yang, W.; Chen, S. H.; Yu, H.; Xu, Z. F.

    2014-06-01

    Non-equilibrium solidification of commercial AZ91 magnesium alloy was performed by copper mold spray-casting technique and the thermal stability property of as-formed meta-stable microstructure was investigated by subsequent annealing at different temperatures and times. Remarkable grain refinement appears with increasing cooling rate during solidification process, which is accompanied by a visible cellular/dendrite transition for the grain morphology of primary phase. Moreover, the non-equilibrium solidified alloy exhibits obvious precipitation hardening effect upon annealing at 200 °C, and the precipitation mode of β-Mg17Al12 phase changes from discontinuous to continuous with extending isothermal time from 4 h to 16 h, which generates an increase of resultant micro-hardness value. After solid solution treatment at the elevated temperature of 420 °C, the volume fraction of β-Mg17Al12 phase decreases and a notable grain growth phenomenon occurs, which give rise to a reduction of hardness in comparison with that of as-quenched alloy.

  13. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    NASA Astrophysics Data System (ADS)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  14. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  15. Annealing effect of ultrathin Ag films on Ni/Pt(111)

    SciTech Connect

    Su, C.W.; Yo, H.Y.; Chen, Y.J.; Shern, C.S.

    2005-06-15

    The epitaxial growth and alloy formation of Ag-capped layer on Ni/Pt(111) surface were investigated using Auger electron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy electron diffraction. The growth of Ag on one ML Ni/Pt(111) transforms from layer-by-layer mode into three-dimensional island mode after the growth of one atomic monolayer of Ag. The starting temperature for the alloy formation of Ni-Pt is dependent of the thickness of Ni films. The interface compositions after the high-temperature annealing were studied with the depth-profile analysis of Ar ion sputtering.

  16. Effect of thermal annealing on structure and optical band gap of Se66Te25In9 thin films

    NASA Astrophysics Data System (ADS)

    Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin

    2015-05-01

    Thin films of a-Se66Te25In9 have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (Eg) of a-Se66Te25In9 have been studied.

  17. Effect of annealing on the magnetic anisotropy and hysteretic properties of film structures containing Tb-Co amorphous layers

    NASA Astrophysics Data System (ADS)

    Vas'kovskiy, V. O.; Svalov, A. V.; Balymov, K. G.; Kulesh, N. A.

    2012-09-01

    The effect of heat treatment on the magnetic properties of Tb-Co amorphous films and film structures based on them has been studied. Regularities of variations of the coercive force and induced magnetic anisotropy constants of Tb-Co amorphous films and the coercive force and unidirectional anisotropy field of the permalloy layer in Fe19Ni81/Tb-Co films were determined as functions of the annealing temperature. The regularities found have been interpreted by assuming temperature-induced changes in the shortrange atomic order in the amorphous structure and interlayer diffusion in two-layer films.

  18. Effects of buffer layer and thermal annealing on the performance of hybrid Cu2S/PVK electrically bistable devices

    NASA Astrophysics Data System (ADS)

    Li, Xu; Lu, Yue; Guan, Li; Li, Jiantao; Wang, Yichao; Dong, Guoyi; Tang, Aiwei; Teng, Feng

    2016-09-01

    Hybrid organic/inorganic electrically bistable devices (EBDs) based on Cu2S/PVK nanocomposites have been fabricated by using a simple spin-coating method. An obvious electrical bistability is observed in the current-voltage (I-V) characteristics of the devices, and the presence of the buffer layer and the annealing process have an important effect on the enhancement of the ON/OFF current ratios. Different electrical conduction mechanisms are responsible for the charge switching of the devices in the presence and absence of the buffer layer.

  19. Effect of the Solution Annealing and Chemical Passivation Followed by Aging on the Corrosion of Shell Mold Cast CF8 Stainless Steel

    NASA Astrophysics Data System (ADS)

    Kim, Kuk-Jin; Ju, Heongkyu; Moon, Young-Dae; Hong, Jun Ho; Pak, Sung Joon

    2016-10-01

    The effects of solution annealing and passivation of shell mold cast CF8 stainless steels on Elbow pipe fittings with 2-month room temperature aging have been studied using a corrosion technique. The resistance of corrosion increased with 2-month room temperature aging combined with solid solution annealing and chemical passivation. The mode of corrosion was deeply related to the δ-ferrite content, permeability, and passivation. The corrosion probability decreased as both the δ-ferrite content and the permeability decreased. Therefore, it is considered that δ-ferrite content and passive film of Cr2O3 play an important role in corrosion resistance of CF8 Elbow pipe fittings due to the long-term aging with solid solution annealing and chemical passivation. This result shows that the corrosion resistance of CF8 fittings can be enhanced by the solid solution annealing and chemical passivation. Decreased ferrite phases and permeability improve IGC resistance in CF8 steel.

  20. Effect of thermal annealing and neutron irradiation in 6H-SiC implanted with silver at 350 °C and 600 °C

    NASA Astrophysics Data System (ADS)

    Hlatshwayo, T. T.; Malherbe, J. B.; van der Berg, N. G.; Botha, A. J.; Chakraborty, P.

    2012-02-01

    The effect of thermal annealing and neutron irradiation in 6H-SiC implanted with silver at 350 °C and 600 °C have been investigated using Rutherford backscattering spectrometry (RBS), Rutherford backscattering spectrometry in channeling mode (RBS-C) and scanning electron spectroscopy (SEM). Implantation at 600 °C and 350 °C caused the 6H-SiC to retain crystallinity. The 600 °C samples had less distortions compared to 350 °C implanted samples. Annealing of the radiation damage created during implantation is also reported. No diffusion of silver was detected after thermal annealing but a shift of the silver peak toward the surface due to thermal etching was observed. The amount of etched SiC has also been estimated by comparing the peak position before and after annealing. Similarly no diffusion was observed after low dose neutron irradiation of the samples.

  1. Effect of the Solution Annealing and Chemical Passivation Followed by Aging on the Corrosion of Shell Mold Cast CF8 Stainless Steel

    NASA Astrophysics Data System (ADS)

    Kim, Kuk-Jin; Ju, Heongkyu; Moon, Young-Dae; Hong, Jun Ho; Pak, Sung Joon

    2016-07-01

    The effects of solution annealing and passivation of shell mold cast CF8 stainless steels on Elbow pipe fittings with 2-month room temperature aging have been studied using a corrosion technique. The resistance of corrosion increased with 2-month room temperature aging combined with solid solution annealing and chemical passivation. The mode of corrosion was deeply related to the δ-ferrite content, permeability, and passivation. The corrosion probability decreased as both the δ-ferrite content and the permeability decreased. Therefore, it is considered that δ-ferrite content and passive film of Cr2O3 play an important role in corrosion resistance of CF8 Elbow pipe fittings due to the long-term aging with solid solution annealing and chemical passivation. This result shows that the corrosion resistance of CF8 fittings can be enhanced by the solid solution annealing and chemical passivation. Decreased ferrite phases and permeability improve IGC resistance in CF8 steel.

  2. Annealing effect on soft magnetic properties and magnetoimpedance of Finemet Fe 73.5Si 13.5B 9Nb 3Au 1 alloy

    NASA Astrophysics Data System (ADS)

    Tho, N. D.; Chau, N.; Yu, S. C.; Lee, H. B.; The, N. D.; Tuan, L. A.

    2006-09-01

    Effect of annealing on the soft magnetic properties of Fe 73.5Si 13.5B 9Nb 3Au 1 amorphous ribbon has been investigated by means of structure examination, magnetoimpedance ratio (MIR) and incremental permeability ratio (PR) spectra measured in the frequency range of 1-10 MHz at a fixed current of 10 mA X-ray diffraction analysis showed that the as-cast sample was amorphous and it became nanocrystalline under a proper heat treatment. When annealing amorphous alloy at 530 °C for 30, 60, 90 min, soft magnetic properties have been improved drastically. Among the samples investigated, the sample annealed at 530 °C for 90 min showed the softest magnetic behavior. The MIR and PR curves revealed the desirable changes in anisotropy field depending upon annealing.

  3. Annealing of RuO 2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO 3 Thin Films

    NASA Astrophysics Data System (ADS)

    Ahn, Joon-Hyung; Choi, Won-Youl; Lee, Won-Jae; Kim, Ho-Gi

    1998-01-01

    Crystalline structures and surface morphologies of annealed RuO2 and Ru thin films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The annealing was performed in oxygen and argon ambient and high vacuum in the temperature range of 400 800° C. In oxygen ambient annealing, the surface morphology was drastically changed due to the evaporation of ruthenium dioxides in the form of RuO3 and RuO4. Annealed RuO2 thin film in vacuum was reduced to the Ru metal phase. The actual variation of RuO2 bottom electrodes during the deposition of (Ba,Sr)TiO3 (BST) thin films and the effects of the thermal stability of bottom electrodes on electrical properties of BST thin films deposited on RuO2/SiO2/Si were also investigated.

  4. Formation of TiO2 nanotube arrays by anodic oxidation in LiOH added ethylene glycol electrolyte and the effect of thermal annealing on the photoelectrochemical properties

    NASA Astrophysics Data System (ADS)

    Taib, Mustaffa Ali Azhar; Tan, Wai Kian; Okuno, Teruhisa; Kawamura, Go; Jaafar, Mariatti; Razak, Khairunisak Abdul; Matsuda, Atsunori; Lockman, Zainovia

    2016-07-01

    The present study employs LiOH as an additive in fluoride ethylene glycol (EG) electrolyte (LiOH/EG) for anodic oxidation of Ti in fabricating anodic TiO2 nanotubes (TNTs). TNTs formed in LiOH/EG electrolyte were found to be longer (6.23 ± 0.2 µm) compared to when only water was used in EG electrolyte: 4.54 ± 0.2 µm for the same anodisation time of 30 min and voltage of 60 V. The as-anodised TNTs were however amorphous. Hence, the samples were annealed at high temperatures for crystallization preferably as anatase oxide. Anatase phase is needed as the anodised Ti is used as a photoanode in a photoelectrochemical (PEC) cell. The effect of annealing temperatures on the TNTs to the photocurrent measurement was investigated in a standard KOH PEC cell under visible light illumination. Anodised Ti annealed at 200 °C has the lowest photocurrent of 0.002 mA cm-2. Sample annealed at 400 °C has the highest photocurrent of 0.955 mA cm-2 (0.5 V) since it is comprised of mostly anatase with crystallite size of 31.80 nm, whereas sample annealed at 600 °C seems to be a mixture of anatase and rutile, displays lower photocurrent of 0.823 mA cm-2. It was also observed that the as-anodised sample has slightly higher photocurrent than the 200 °C annealed sample perhaps due to the adsorbed OH species from the electrolyte acting as holes trapping sites.

  5. Effects of Annealing Process on the Formability of Friction Stir Welded Al-Li Alloy 2195 Plates

    NASA Technical Reports Server (NTRS)

    Chen, Po-Shou; Bradford, Vann; Russell, Carolyn

    2011-01-01

    Large rocket cryogenic tank domes have typically been fabricated using Al-Cu based alloys like Al-Cu alloy 2219. The use of aluminum-lithium based alloys for rocket fuel tank domes can reduce weight because aluminum-lithium alloys have lower density and higher strength than Al-Cu alloy 2219. However, Al-Li alloys have rarely been used to fabricate rocket fuel tank domes because of the inherent low formability characteristic that make them susceptible to cracking during the forming operations. The ability to form metal by stretch forming or spin forming without excessive thinning or necking depends on the strain hardening exponent "n". The stain hardening exponent is a measure of how rapidly a metal becomes stronger and harder. A high strain hardening exponent is beneficial to a material's ability to uniformly distribute the imposed strain. Marshall Space Flight Center has developed a novel annealing process that can achieve a work hardening exponent on the order of 0.27 to 0.29, which is approximately 50% higher than what is typically obtained for Al-Li alloys using the conventional method. The strain hardening exponent of the Al-Li alloy plates or blanks heat treated using the conventional method is typically on the order of 0.17 to 0.19. The effects of this novel annealing process on the formability of friction stir welded Al-Li alloy blanks are being studied at Marshall Space Flight Center. The formability ratings will be generated using the strain hardening exponent, strain rate sensitivity and forming range. The effects of forming temperature on the formability will also be studied. The objective of this work is to study the deformation behavior of the friction stir welded Al-Li alloy 2195 blank and determine the formability enhancement by the new annealing process.

  6. Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ-Pu

    DOE PAGES

    Olive, D. T.; Booth, C. H.; Wang, D. L.; Bauer, E. D.; Pugmire, A. L.; Freibert, F. J.; McCall, S. K.; Wall, M. A.; Allen, P. G.

    2016-07-19

    The effects on the local structure due to self-irradiation damage of Ga stabilized δ-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and the Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curvemore » have been determined using an amplitude-ratio method, a standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to the previous electrical resistivity- and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Altogether, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals.« less

  7. Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ-Pu

    NASA Astrophysics Data System (ADS)

    Olive, D. T.; Wang, D. L.; Booth, C. H.; Bauer, E. D.; Pugmire, A. L.; Freibert, F. J.; McCall, S. K.; Wall, M. A.; Allen, P. G.

    2016-07-01

    The effects on the local structure due to self-irradiation damage of Ga stabilized δ-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and the Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curve have been determined using an amplitude-ratio method, a standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to the previous electrical resistivity- and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Together, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals.

  8. Effect of annealing treatment on the crystallisation and leaching of dumped base metal smelter slags.

    PubMed

    Maweja, Kasonde; Mukongo, Tshikele; Mbaya, Richard K; Mochubele, Emela A

    2010-11-15

    Leaching tests of base metals contained in two smelter slags were undertaken in ammonia and nitric acid solutions aiming to recover Co, Cu and Zn. Leaching tests were conducted at 25 and 60°C at pH=0 and 3 in HNO(3) and pH=12 in NH(4)OH media. XRD analysis revealed that the dumped slags were amorphous. Annealing these slags at 1180°C produced crystalline phases comprising diopside, magnetite and fayalite. SEM and EDS analysis revealed that Cu and Pb compounds have concentrated in the magnetite phase, whereas another phase rich in Zn and Cu was located in the diopside matrix. ICP-OES analysis of the pregnant leaching solutions (PLS) showed that 30-60% of Co, Cu and Zn were released from the amorphous slags treated in HNO(3) at pH=0, and lesser in ammonia. However, the contamination by Fe and Pb was higher at pH=0. The contamination of the PLS obtained by leaching of the crystallised slags remained low. The low Fe and Pb contamination was attributed in this case to the chemical stability of the crystalline phases formed upon annealing treatment. The higher solubilisation of metals contained in amorphous slags was attributed to the collapse of silicate structures during nitric acid leaching at pH∼0. PMID:20674164

  9. Thermal annealing effect on poly(3-hexylthiophene): fullerene:copper-phthalocyanine ternary photoactive layer.

    PubMed

    Derouiche, H; Mohamed, A B

    2013-01-01

    We have fabricated poly(3-hexylthiophene) (P3HT)/copper phthalocyanine (CuPc)/fullerene (C60) ternary blend films. This photoactive layer is sandwiched between an indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT/PSS) photoanode and a bathocuproine (BCP)/aluminium photocathode. The thin films have been characterized by atomic force microscope (AFM) and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the morphological and optical properties of the photoactive layer. We have also compared the I-V characteristics of three different organic solar cells: ITO/PEDOT:PSS/CuPc₀.₅:C60₀.₅/BCP/Al and ITO/PEDOT:PSS/P3HT₀.₃:CuPc₀.₃:C60₀.₄/BCP/Al with and without annealing. Both structures show good photovoltaic behaviour. Indeed, the incorporation of P3HT into CuPc:C60 thin film improves all the photovoltaic characteristics. We have also seen that thermal annealing significantly improves the optical absorption ability and stabilizes the organic solar cells making it more robust to chemical degradation.

  10. 9 T high magnetic field annealing effects on FeN bulk sample

    SciTech Connect

    Jiang, Yanfeng; Wang, Jian-Ping; Dabade, Vivekanand; James, Richard D.; Brady, Michael P.; Rios, Orlando

    2014-05-07

    α″-Fe{sub 16}N{sub 2} has been suggested as a promising candidate for future rare-earth-free magnets. In this paper, we report to use high magnetic field (9 T) assisted post-annealing process to enhance the Fe{sub 16}N{sub 2} phase formation in FeN bulk rod samples during the α′ → α″ phase transformation and thus improve its magnetic properties. It was found by X-ray Diffraction measurement that the volume ratio of Fe{sub 16}N{sub 2} phase was increased up to 22%, which corresponds to an increase in the amount of transformation from α′ → α″ up to 78%. Also, the saturation magnetization (M{sub s}) of the prepared FeN rod sample was increased to 227 emu/g with its coercivity up to 376 Oe at room temperature. A working mechanism for the high field assisted post-annealing process was presented.

  11. Optimization of silver nanowire-based transparent electrodes: effects of density, size and thermal annealing

    NASA Astrophysics Data System (ADS)

    Lagrange, M.; Langley, D. P.; Giusti, G.; Jiménez, C.; Bréchet, Y.; Bellet, D.

    2015-10-01

    Silver nanowire (AgNW) networks are efficient as flexible transparent electrodes, and are cheaper to fabricate than ITO (Indium Tin Oxide). Hence they are a serious competitor as an alternative to ITO in many applications such as solar cells, OLEDs, transparent heaters. Electrical and optical properties of AgNW networks deposited on glass are investigated in this study and an efficient method to optimize them is proposed. This paper relates network density, nanowire dimensions and thermal annealing directly to the physical properties of the nanowire networksusing original physical models. A fair agreement is found between experimental data and the proposed models. Moreover thermal stability of the nanowires is a key issue in thermal optimization of such networks and needs to be studied. In this work the impact of these four parameters on the networks physical properties are thoroughly investigated via in situ measurements and modelling, such a method being also applicable to other metallic nanowire networks. We demonstrate that this approach enables the optimization of both optical and electrical properties through modification of the junction resistance by thermal annealing, and a suitable choice of nanowire dimensions and network density. This work reports excellent optical and electrical properties of electrodes fabricated from AgNW networks with a transmittance T = 89.2% (at 550 nm) and a sheet resistance of Rs = 2.9 Ω □-1, leading to the highest reported figure of merit.

  12. Precipitation of iron in multicrystalline silicon during annealing

    NASA Astrophysics Data System (ADS)

    Liu, A. Y.; Macdonald, Daniel

    2014-03-01

    In this paper, the precipitation kinetics of iron in multicrystalline silicon during moderate temperature annealing are systematically studied with respect to annealing time, temperature, iron super-saturation level, and different types and densities of precipitation sites. The quantitative analysis is based on examining the changes in the concentrations and distributions of interstitial iron in multicrystalline silicon wafers after annealing at 400-700 °C. This is achieved by using the photoluminescence imaging technique to produce high-resolution spatially resolved images of the interstitial iron concentrations. The concentrations of interstitial iron are found to decrease exponentially with the annealing time. Comparison of the precipitation time constants of wafers annealed at different temperatures and of different initial interstitial iron concentrations indicates that higher levels of iron super-saturation result in faster precipitation processes. The impact of iron super-saturation on the precipitation kinetics becomes increasingly important at low levels of super-saturation, while its impact saturates at very high levels of super-saturation (above 1000). Some grain boundaries are shown to act as effective precipitation sites for iron during annealing, and the reduction in the interstitial iron concentrations in the intra-grain regions is found to be mainly due to precipitation at dislocations. Some important differences between the iron precipitation behaviour at the grain boundaries and at the intra-grain dislocations are discussed. The effect of hydrogenation of the multicrystalline silicon wafers on the apparent iron precipitation rate is also presented and discussed.

  13. Effect of Annealing on Mechanical Properties and Formability of Cold Rolled Thin Sheets of Fe-P P/M Alloys

    NASA Astrophysics Data System (ADS)

    Trivedi, Shefali; Ravi Kumar, D.; Aravindan, S.

    2016-08-01

    Phosphorus in steel is known to increase strength and hardness and decrease ductility. Higher phosphorus content (more than 0.05%), however, promotes brittle behavior due to segregation of Fe3P along the grain boundaries which makes further mechanical working of these alloys difficult. In this work, thin sheets of Fe-P alloys (with phosphorus in range of 0.1-0.35%) have been developed through processing by powder metallurgy followed by hot rolling and cold rolling. The effect of phosphorus content and annealing parameters (temperature and time) on microstructure, mechanical properties, formability in biaxial stretching and fracture behavior of the cold rolled and annealed sheets has been studied. A comparison has also been made between the properties of the sheets made through P/M route and the conventional cast route with similar phosphorus content. It has been shown that thin sheets of Fe-P alloys with phosphorous up to 0.35% possessing a good combination of strength and formability can be produced through rolling of billets of these alloys made through powder metallurgy technique without the problem of segregation.

  14. Effect of Annealing on Mechanical Properties and Formability of Cold Rolled Thin Sheets of Fe-P P/M Alloys

    NASA Astrophysics Data System (ADS)

    Trivedi, Shefali; Ravi Kumar, D.; Aravindan, S.

    2016-10-01

    Phosphorus in steel is known to increase strength and hardness and decrease ductility. Higher phosphorus content (more than 0.05%), however, promotes brittle behavior due to segregation of Fe3P along the grain boundaries which makes further mechanical working of these alloys difficult. In this work, thin sheets of Fe-P alloys (with phosphorus in range of 0.1-0.35%) have been developed through processing by powder metallurgy followed by hot rolling and cold rolling. The effect of phosphorus content and annealing parameters (temperature and time) on microstructure, mechanical properties, formability in biaxial stretching and fracture behavior of the cold rolled and annealed sheets has been studied. A comparison has also been made between the properties of the sheets made through P/M route and the conventional cast route with similar phosphorus content. It has been shown that thin sheets of Fe-P alloys with phosphorous up to 0.35% possessing a good combination of strength and formability can be produced through rolling of billets of these alloys made through powder metallurgy technique without the problem of segregation.

  15. Thermal annealing effects on photoluminescence properties of carbon-doped silicon-rich oxide thin films implanted with erbium

    NASA Astrophysics Data System (ADS)

    Nikas, Vasileios; Gallis, Spyros; Huang, Mengbing; Kaloyeros, Alain E.

    2011-05-01

    Results are presented from the photoluminescence properties of C-doped Si-rich thin film oxides implanted with Er, as investigated for various postdeposition implantation and subsequent annealing and passivation conditions. In particular, it was found that the near-infrared Er luminescence intensity can be increased by up to a factor of ˜4 after a postdeposition anneal at temperatures of 300-1100 °C. The postdeposition annealing also resulted in an enhancement of the green-red (500-600 nm) PL band associated with the film matrix. Post-Er implantation passivation in an oxygen atmosphere resulted in a gradual reduction in intensity for both the Er and matrix PLs, and led eventually to a complete quenching of both PLs at the highest passivation temperature (900 °C). In contrast, hydrogen passivation increased the matrix PL intensity by a factor up to ˜2, but was found to have negligible effects on Er PL intensity over a wide range of passivation temperatures. Analysis of Er and matrix-related PL characteristics suggests that the matrix luminescence centers are most likely the sensitizers responsible for energy transfer to Er in C-doped silicon oxides. In this context, a discussion is presented of potential types of matrix-related luminescence centers present in such materials, along with the possible mechanisms leading to differences in Er excitation and deexcitation between the C-doped Si-rich oxide films analyzed herein and commonly reported Si-rich oxide materials containing Si nanocrystals.

  16. Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires.

    PubMed

    Kasanaboina, Pavan; Sharma, Manish; Deshmukh, Prithviraj; Reynolds, C Lewis; Liu, Yang; Iyer, Shanthi

    2016-12-01

    The effects of ex-situ annealing in a N2 ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, identified to arise from band tail states. A large red shift of 7 cm(-1) and broadened Raman spectra of as-grown nanowires compared to that of non-nitride nanowires confirmed phonon localization at N-induced localized defects. On annealing nanowires to 750 °C, there was no change in the planar defects in the nanowire with respect to the as-grown nanowire; however, vanishing of the photoluminescence (PL) peak corresponding to band tail states along with enhanced band edge PL intensity, recovery of the Raman shift and increase in the Schottky barrier height from 0.1 to 0.4 eV clearly point to the efficient annihilation of point defects in these GaAsSbN nanowires. A significant reduction in the temperature-induced energy shift in the annealed nanowires is attributed to annihilation of band tail states and weak temperature dependence of N-related localized states. The observation of room temperature PL signal in the 1.3 μm region shows that the strategy of adding small amounts of N to GaAsSb is a promising route to realization of efficient nanoscale light emitters with reduced temperature sensitivity in the telecommunication wavelength region.

  17. Effect of thermal annealing in vacuum on the photovoltaic properties of electrodeposited Cu2O-absorber solar cell

    NASA Astrophysics Data System (ADS)

    Dimopoulos, T.; Peić, A.; Abermann, S.; Postl, M.; List-Kratochvil, E. J. W.; Resel, R.

    2014-07-01

    Heterojunction solar cells were fabricated by electrochemical deposition of p-type, cuprous oxide (Cu2O) absorber on sputtered, n-type ZnO layer. X-ray diffraction measurements revealed that the as-deposited absorber consists mainly of Cu2O, but appreciable amounts of metallic Cu and cupric oxide (CuO) are also present. These undesired oxidation states are incorporated during the deposition process and have a detrimental effect on the photovoltaic properties of the cells. The open circuit voltage (VOC), short circuit current density (jSC), fill factor (FF) and power conversion efficiency (η) of the as-deposited cells are 0.37 V, 3.71 mA/cm2, 35.7% and 0.49%, respectively, under AM1.5G illumination. We show that by thermal annealing in vacuum, at temperatures up to 300 °C, compositional purity of the Cu2O absorber could be obtained. A general improvement of the heterojunction and bulk materials quality is observed, reflected upon the smallest influence of the shunt and series resistance on the transport properties of the cells in dark and under illumination. Independent of the annealing temperature, transport is dominated by the space-charge layer generation-recombination current. After annealing at 300 °C the solar cell parameters could be significantly improved to the values of: VOC = 0.505 V, jSC = 4.67 mA/cm2, FF = 47.1% and η = 1.12%.

  18. Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

    NASA Astrophysics Data System (ADS)

    Kasanaboina, Pavan; Sharma, Manish; Deshmukh, Prithviraj; Reynolds, C. Lewis; Liu, Yang; Iyer, Shanthi

    2016-02-01

    The effects of ex-situ annealing in a N2 ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, identified to arise from band tail states. A large red shift of 7 cm-1 and broadened Raman spectra of as-grown nanowires compared to that of non-nitride nanowires confirmed phonon localization at N-induced localized defects. On annealing nanowires to 750 °C, there was no change in the planar defects in the nanowire with respect to the as-grown nanowire; however, vanishing of the photoluminescence (PL) peak corresponding to band tail states along with enhanced band edge PL intensity, recovery of the Raman shift and increase in the Schottky barrier height from 0.1 to 0.4 eV clearly point to the efficient annihilation of point defects in these GaAsSbN nanowires. A significant reduction in the temperature-induced energy shift in the annealed nanowires is attributed to annihilation of band tail states and weak temperature dependence of N-related localized states. The observation of room temperature PL signal in the 1.3 μm region shows that the strategy of adding small amounts of N to GaAsSb is a promising route to realization of efficient nanoscale light emitters with reduced temperature sensitivity in the telecommunication wavelength region.

  19. Effect of Annealing Temperature on Dielectric Constant and Bonding Structure of Low-k SiCOH Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sungwoo; Yang, Jaeyoung; Yeo, Sanghak; Lee, Jaewon; Jung, Donggeun; Boo, Jin-hyo; Kim, Hyoungsub; Chae, Heeyeop

    2007-02-01

    We investigated the effect of annealing temperature on the properties of SiCOH films deposited by plasma-enhanced chemical vapor deposition using or a mixture of Si-O containing and hydrocarbon precursors, decamethyl-cyclopentasiloxane (DMCPSO-C10H30O5Si5) and cyclohexane (CHex-C6H12). These SiCOH films were deposited at pressures of 0.6 and 1.5 Torr and the as-deposited SiCOH films were subjected to annealing temperatures from 25 to 500 °C in a furnace for 1 h in N2 ambient at a pressure of 1 atm. The relative dielectric constants, k, of the SiCOH films deposited at 0.6 and 1.5 Torr were 2.76 and 2.26, respectively, before the annealing process. The subsequent annealing of the SiCOH film at 500 °C further reduced the k values to as low as 2.31 and 1.85, respectively. Decreases in the refractive index, hardness, and modulus were observed as the annealing temperature increased to 450 °C. However, further increasing annealing temperature to 500 °C caused the refractive index, hardness, and modulus to increase again. Trends of decreases in both the hardness and modulus with increasing annealing temperature were found. The refractive index and the film thickness retention also decreased with increasing annealing temperature. The change in the k value as a function of the annealing temperature was correlated with the change in the Fourier transform infrared absorption peaks of C-Hx, Si-CH3, and Si-O related groups. As the annealing temperature increased, the intensity of both the CHx and Si-CH3 peaks decreased, respectively. In particular, the C-H2 (asymmetric and symmetric) peaks provide direct evidence of the presence of ethylene groups in the SiCOH films. Thus the decrease in intensity of the peaks corresponding to the CHx groups and Si-O cage structure in the SiCOH films was considered to be responsible for lowering they dielectric constant, refractive index, hardness and modulus of the films. The leakage current density of the SiCOH films at 1 MV/cm is obtained

  20. Effects of annealing temperature on structure and magnetic properties of CoAl0.2Fe1.8O4/SiO2 nanocomposites

    NASA Astrophysics Data System (ADS)

    Wang, L.; Li, J.; Liu, M.; Zhang, Y. M.; Lu, J. B.; Li, H. B.

    2012-12-01

    CoAl0.2Fe1.8O4/SiO2 nanocomposites were prepared by sol-gel method. The effects of annealing temperature on the structure and magnetic properties of the samples were studied by X-ray diffraction, transmission electron microscopy, vibrating sample magnetometer and Mössbauer spectroscopy. The results show that the CoAl0.2Fe1.8O4 in the samples exhibits a spinel structure after being annealed. As annealing temperature increases from 800 to 1200 °C, the average grain size of CoAl0.2Fe1.8O4 in the nanocomposites increases from 5 to 41 nm while the lattice constant decreases from 0.8397 to 0.8391 nm, the saturation magnetization increases from 21.96 to 41.53 emu/g. Coercivity reaches a maximum of 1082 Oe for the sample annealed at 1100 °C, and thereafter decreases with further increasing annealing temperature. Mössbauer spectra show that the isomer shift decreases, hyperfine field increases and the samples transfer from mixed state of superparamagnetic and magnetic order to the completely magnetic order with annealing temperature increasing from 800 to 1200 °C.

  1. Effect of fuel rate and annealing process of LiFePO{sub 4} cathode material for Li-ion batteries synthesized by flame spray pyrolysis method

    SciTech Connect

    Halim, Abdul; Setyawan, Heru; Machmudah, Siti; Nurtono, Tantular; Winardi, Sugeng

    2014-02-24

    In this study the effect of fuel rate and annealing on particle formation of LiFePO{sub 4} as battery cathode using flame spray pyrolysis method was investigated numerically and experimentally. Numerical study was done using ANSYS FLUENT program. In experimentally, LiFePO{sub 4} was synthesized from inorganic aqueous solution followed by annealing. LPG was used as fuel and air was used as oxidizer and carrier gas. Annealing process attempted in inert atmosphere at 700°C for 240 min. Numerical result showed that the increase of fuel rate caused the increase of flame temperature. Microscopic observation using Scanning Electron Microscopy (SEM) revealed that all particles have sphere and polydisperse. Increasing fuel rate caused decreasing particle size and increasing particles crystallinity. This phenomenon attributed to the flame temperature. However, all produced particles still have more amorphous phase. Therefore, annealing needed to increase particles crystallinity. Fourier Transform Infrared (FTIR) analysis showed that all particles have PO4 function group. Increasing fuel rate led to the increase of infrared spectrum absorption corresponding to the increase of particles crystallinity. This result indicated that phosphate group vibrated easily in crystalline phase. From Electrochemical Impedance Spectroscopy (EIS) analysis, annealing can cause the increase of Li{sup +} diffusivity. The diffusivity coefficient of without and with annealing particles were 6.84399×10{sup −10} and 8.59888×10{sup −10} cm{sup 2} s{sup −1}, respectively.

  2. Investigation of Cu Doping, Morphology and Annealing Effects on Structural and Optical Properties of ZnO:Dy Nanostructures.

    PubMed

    Najafi, Mehrdad

    2016-05-01

    Dysprosium (Dy) doped ZnO nanosheets and nanorods were synthesized by hydrothermal method. Effects of Cu doping, morphology and annealing in Oxygen ambient on structural and optical properties of ZnO nanostructures were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), diffuse reflectance spectra (DRS) and photoluminescence (PL) spectroscopy. This study recommends that both of intrinsic and extrinsic defects facilitate energy transfer (ET) from the ZnO host to Dy(3+) ions and consequently have an effective role on producing intense Dy emissions at indirect excitation. The results also revealed that annealing process improved the crystal structure of ZnO nanorods due to decrease of surface; however decreased ET and Dy emissions because of diminishing in oxygen vacancy. In addition, as a result of increasing of surface area in nanorods compared to nanosheets, the oxygen vacancies and ET were enhanced. Moreover the results exhibited that electrical and optical properties of ZnO:Dy can be tuned by various amount of Dy concentrations and also Cu doping.

  3. Investigation of Cu Doping, Morphology and Annealing Effects on Structural and Optical Properties of ZnO:Dy Nanostructures.

    PubMed

    Najafi, Mehrdad

    2016-05-01

    Dysprosium (Dy) doped ZnO nanosheets and nanorods were synthesized by hydrothermal method. Effects of Cu doping, morphology and annealing in Oxygen ambient on structural and optical properties of ZnO nanostructures were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), diffuse reflectance spectra (DRS) and photoluminescence (PL) spectroscopy. This study recommends that both of intrinsic and extrinsic defects facilitate energy transfer (ET) from the ZnO host to Dy(3+) ions and consequently have an effective role on producing intense Dy emissions at indirect excitation. The results also revealed that annealing process improved the crystal structure of ZnO nanorods due to decrease of surface; however decreased ET and Dy emissions because of diminishing in oxygen vacancy. In addition, as a result of increasing of surface area in nanorods compared to nanosheets, the oxygen vacancies and ET were enhanced. Moreover the results exhibited that electrical and optical properties of ZnO:Dy can be tuned by various amount of Dy concentrations and also Cu doping. PMID:26798063

  4. Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing.

    PubMed

    Blackwell, Sabrina; Smith, Roger; Kenny, Steven D; Walls, John M; Sanz-Navarro, Carlos F

    2013-04-01

    Results are presented for modelling of the evaporation and magnetron sputter deposition of Zn(x)O(y) onto an O-terminated ZnO (0001¯) wurtzite surface. Growth was simulated through a combination of molecular dynamics (MD) and an on-the-fly kinetic Monte Carlo (otf-KMC) method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine the effects of varying experimental parameters, such as substrate bias, distribution of the deposition species and annealing temperature. It was found when comparing evaporation and sputtering growth that the latter process results in a denser and more crystalline structure, due to the higher deposition energy of the arriving species. The evaporation growth also exhibits more stacking faults than the sputtered growth. Post-annealing at 770 K did not allow complete recrystallization, resulting in films which still had stacking faults where monolayers formed in the zinc blende phase, whereas annealing at 920 K enabled the complete recrystallization of some films to the wurtzite structure. At the latter temperature atoms could also sometimes be locked in the zinc blende phase after annealing. When full recrystallization did not take place, both wurtzite and zinc blende phases were seen in the same layer, resulting in a phase boundary. Investigation of the various distributions of deposition species showed that, during evaporation, the best quality film resulted from a stoichiometric distribution where only ZnO clusters were deposited. During sputtering, however, the best quality film resulted from a slightly O rich distribution. Two stoichiometric distributions, one involving mainly ZnO clusters and the other involving mainly single species, showed that the distribution of deposition species makes a huge impact on the grown film. The deposition of predominantly single species causes many more O atoms at the surface to be sputtered or reflected, resulting in an O deficiency of up to 18% in the

  5. Effects of Annealing Treatment Prior to Cold Rolling on Delayed Fracture Properties in Ferrite-Austenite Duplex Lightweight Steels

    NASA Astrophysics Data System (ADS)

    Sohn, Seok Su; Song, Hyejin; Kim, Jung Gi; Kwak, Jai-Hyun; Kim, Hyoung Seop; Lee, Sunghak

    2016-02-01

    Tensile properties of recently developed automotive high-strength steels containing about 10 wt pct of Mn and Al are superior to other conventional steels, but the active commercialization has been postponed because they are often subjected to cracking during formation or to the delayed fracture after formation. Here, the delayed fracture behavior of a ferrite-austenite duplex lightweight steel whose microstructure was modified by a batch annealing treatment at 1023 K (750 °C) prior to cold rolling was examined by HCl immersion tests of cup specimens, and was compared with that of an unmodified steel. After the batch annealing, band structures were almost decomposed as strong textures of {100}<011> α-fibers and {111}<112> γ-fibers were considerably dissolved, while ferrite grains were refined. The steel cup specimen having this modified microstructure was not cracked when immersed in an HCl solution for 18 days, whereas the specimen having unmodified microstructure underwent the delayed fracture within 1 day. This time delayed fracture was more critically affected by difference in deformation characteristics such as martensitic transformation and deformation inhomogeneity induced from concentration of residual stress or plastic strain, rather than the difference in initial microstructures. The present work gives a promise for automotive applications requiring excellent mechanical and delayed fracture properties as well as reduced specific weight.

  6. Effects of high-temperature annealing on ESR properties of solid solutions of garnet minerals

    NASA Astrophysics Data System (ADS)

    Gundu Rao, T. K.; Cano, Nilo F.; Chubaci, Jose F. D.; Watanabe, S.

    2016-04-01

    A garnet (G7) silicate mineral belonging to pyralspite subgroup was studied using the technique of electron spin resonance (ESR). This study shows that iron is present in G7 as isolated species as well as species coupled by dipolar interactions. The ESR data shows a gradual increase of cluster of Fe3+ ions accompanied by decrease of dipolar interactions and increase of possible exchange interactions at high temperature. The Fe2+→Fe3+ oxidation process occurs in the garnets as a function of annealing temperature. Thermoluminescence (TL) peaks at approximately 190 and 340 °C are observed in the irradiated G7 garnet. Investigations using the technique of ESR were carried out to identify the centers involved in the TL process.

  7. Macrosegregation in Bridgman growth of Terfenol-D and effects of annealing

    NASA Astrophysics Data System (ADS)

    Park, Won Je; Kim, Jong Chul; Ye, Byoung June; Lee, Zin Hyoung

    Giant magnetostrictive material Terfenol-D (Tb xDy 1- xFe 2- y, 0.27⩽ x⩽0.30, 0.05⩽ y⩽0.1) was directionally solidified by vertical Bridgman method within a sealed quartz crucible. Macrosegregation of RE elements along the growth axis occurred in an abnormal way. RE elements concentration decreased significantly with increasing axial distance, which is different from the typical macrosegregation with a distribution coefficient, k, less than unity. This was due to the compositional inhomogeneity of the initial melt. During the melting of the prealloyed ingot in the quartz crucible, eutectic RE-rich phase melted first and flowed out into the gap between the crucible and the ingot. This RE-rich phase which flowed to the bottom did not mix well with the melt by convection because the temperature distribution in the melt is quite stable and the density of the RE-rich phase is higher than that of the REFe 2 phase. Macrosegregation was reduced very much in the rod grown after the homogenization of the initial melt. Even though the magnetostrictive strain was very different from part to part in the as-grown rod due to the macrosegregation, each specimen came to have a similar magnetostriction after the heat treatment above the eutectic temperature (890° C). During the high-temperature annealing, excess RE-rich phase was observed to be melted and flowed out from the specimen leaving pores between REFe 2 matrices. Therefore, composition of the crystal approached to the stoichiometic value regardless of the initial composition. That makes magnetostriction of the samples similar to one another. Melt extraction during the annealing is thought to be the result of poor wetting between the two phases.

  8. Microstructural evolution during ultra-rapid annealing of severely deformed low-carbon steel: strain, temperature, and heating rate effects

    NASA Astrophysics Data System (ADS)

    Mostafaei, M. A.; Kazeminezhad, M.

    2016-07-01

    An interaction between ferrite recrystallization and austenite transformation in low-carbon steel occurs when recrystallization is delayed until the intercritical temperature range by employing high heating rate. The kinetics of recrystallization and transformation is affected by high heating rate and such an interaction. In this study, different levels of strain are applied to low-carbon steel using a severe plastic deformation method. Then, ultra-rapid annealing is performed at different heating rates of 200-1100°C/s and peak temperatures of near critical temperature. Five regimes are proposed to investigate the effects of heating rate, strain, and temperature on the interaction between recrystallization and transformation. The microstructural evolution of severely deformed low-carbon steel after ultra-rapid annealing is investigated based on the proposed regimes. Regarding the intensity and start temperature of the interaction, different microstructures consisting of ferrite and pearlite/martensite are formed. It is found that when the interaction is strong, the microstructure is refined because of the high kinetics of transformation and recrystallization. Moreover, strain shifts an interaction zone to a relatively higher heating rate. Therefore, severely deformed steel should be heated at relatively higher heating rates for it to undergo a strong interaction.

  9. Effect of annealing temperature and pH on morphology and optical property of highly dispersible ZnO nanoparticles

    SciTech Connect

    Uthirakumar, Periyayya; Hong, Chang-Hee

    2009-11-15

    Highly dispersible zinc oxide nanoparticles were produced in large quantity via a simple solution method. The effect of temperature and pH impact on as-prepared ZnO nanoparticles with respect to the morphological and optical characteristics has been investigated. The average particle size of ZnO nanoparticles increased with increasing annealing temperature. A sharp UV band-edge emission was observed in as-prepared ZnO nanoparticles with negligibly less intense deep level emission. However, upon annealing at high temperature in air, UV band-edge emission disappears with an evolution of a broad deep level emission in photoluminescence spectra. Similarly, by adjusting the pH of reaction medium from 4 to pH = 8 using ammonium hydroxide solution, particle size gets bigger and bigger leads to red-shift in UV band-edge emission and an appearance of deep level emission peak. At pH = 8, well resolved sharp X-ray diffraction peaks were observed with lower FWHM values due to higher crystallite sizes.

  10. Controllable nitrogen doping in as deposited TiO{sub 2} film and its effect on post deposition annealing

    SciTech Connect

    Deng, Shaoren; Devloo-Casier, Kilian; Devulder, Wouter; Dendooven, Jolien; Deduytsche, Davy; Detavernier, Christophe; Lenaerts, Silvia; Martens, Johan A.; Van den Berghe, Sven

    2014-01-15

    In order to narrow the band gap of TiO{sub 2}, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO{sub 2} and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO{sub 2} and PEALD TiN, the as synthesized TiO{sub x}N{sub y} films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO{sub 2} films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO{sub 2} along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.

  11. Annealing Temperature and Initial Iron Valence Ratio Effects on the Structural Characteristics of Nanoscale Nickel Zinc Ferrite

    SciTech Connect

    Calvin, S.; Shultz, M; Glowzenski, L; Carpenter, E

    2010-01-01

    Nickel zinc ferrite (NZFO) nanoparticles were synthesized via a reverse micelle method with a nonionic surfactant. Three different initial Fe{sup 3+}/Fe{sup 2+} ratios were employed along with three different firing temperatures (200, 500, 1000 C) to investigate the effects on the NZFO system. Extended x-ray absorption fine structure (EXAFS) results reveal zinc loss at high annealing temperatures; at 1000 C, the loss is nearly total for Fe{sup 3+}/Fe{sup 2+} ratios other than 10:90. Annealing at 500 C, however, appears necessary for fully incorporating the zinc and nickel into the spinel phase. The best nanoferrite was thus obtained using an initial Fe{sup 3+}/Fe{sup 2+} ratio of 10:90 and a moderate firing temperature of 500 C. This sample exhibits a room temperature saturation magnetization of 58 emu/g as measured via vibrating sample magnetometry, comparable with bulk values and greater than that of confirmed nano-NZFOs found in the literature. EXAFS also indicates that in all cases in which the elements adopted a spinel structure, the nickel occupies only octahedral sites and the zinc primarily tetrahedral sites.

  12. The effect of annealing on the Knoop microhardness of nitrogen implanted Ti6Al4V alloy

    NASA Astrophysics Data System (ADS)

    Nath, V. C.; Sood, D. K.; Manory, R. R.

    1991-07-01

    The implantation of the Ti6Al4V alloy with nitrogen has been previously studied, and the treatment has been shown to improve the microhardness significantly [R.G. Vardiman, Defect and Diffusion Forum 57/58 (1988) 135, and references therein]. The effects of post-implantation annealing on the properties has not been studied systematically, and this is the principal aim of the RMIT work. Initial results of this study are presented and discussed. It was found that N + implantation of this alloy at 80 keV with fluences varying in the range (0.5-1.5) × 10 17ions/cm 2 caused an improvement in Knoop hardness up to 100%. Rutherford backscattering results show a buried layer containing up to 25% nitrogen in the as-implanted specimens at a depth of 130 nm. After annealing the sample implanted with 1.5 × 10 17 at 705°C, both the nitrogen concentration and the depth of the layer decrease to approximately half of their as-implanted values. The observed reduction in hardness can be attributed to the decrease in the nitrogen concentration of the buried layer, as well as to repair of the lattice. These results may indicate that only a limited amount of TiN forms directly during implantation.

  13. Modeling the effects of ion dose and crystallographic symmetry on the morphological evolution of embedded precipitates under thermal annealing

    NASA Astrophysics Data System (ADS)

    Li, Kun-Dar

    2014-10-01

    Thermal annealing is one of the most common techniques to synthesize embedded precipitates by ion implantation process. In this study, an anisotropic phase field model is presented to investigate the effects of ion dose and crystallographic symmetry on the morphological formation and evolution of embedded precipitates during post-implantation thermal annealing process. This theoretical model provides an efficient numerical approach to understand the phenomenon of faceted precipitates formation by ion implantation. As a theoretical analysis, the interfacial energy and diffusion kinetics play prominent roles in the mechanism of atomic diffusion for the precipitates formation. With a low ion dose, faceted precipitates are developed by virtue of the anisotropic interfacial energy. As an increase of ion dose, connected precipitates with crystallographic characters on the edge are appeared. For a high ion dose, labyrinth-like nanostructures of precipitates are produced and the characteristic morphology of crystallographic symmetry becomes faint. These simulation results for the morphological evolutions of embedded precipitates by ion implantation are corresponded with many experimental observations in the literatures. The quantitative analyses of the simulations are also well described the consequence of precipitates formation under different conditions.

  14. In-Situ Measurements of Graphene Mechanics During Annealing

    NASA Astrophysics Data System (ADS)

    Hui, Aaron; de Alba, Roberto; Sebastian, Abhilash; Parpia, Jeevak

    Graphene shows great potential as a material for a new generation of mechanical nanodevices. However, current methodologies used for fabricating graphene structures involve polymer resists for transfer and patterning, which degrades mechanical performance. To improve surface quality, high current or high temperature annealing of graphene is commonly employed. Previous studies of graphene mechanics have focused on performance after annealing or temperature-dependent behavior from 4K-300K. Here we present real-time, in-situ measurements of graphene mechanical resonance during high temperature annealing from 300K-600K. Upon heating, reversible changes in mechanical frequency are indicative of graphene thermal contraction. Discontinuous and irreversible changes are also seen, corresponding to graphene slipping and mass desorption. Both reversible and irreversible changes in quality factor are also observed. Characterizing the effects of annealing on the structural properties of graphene will enable more precise engineering for particular applications, such as mass sensing.

  15. Effects of MgO buffer annealing on optical and electrical quality of P-MBE grown ZnO films on c-sapphire

    NASA Astrophysics Data System (ADS)

    Setiawan, A.; Yao, T.

    2016-04-01

    Zinc oxide (ZnO) has been attracting much attention because of its potential applications in photonic and optoelectronic devices. In this present study, we investigated the effect of MgO buffer annealing on the optical and electrical quality of P-MBE grown ZnO films on c-sapphire with MgO buffer layer. The optical quality was observed by low-temperature PL (photoluminescence) measurement in the near band edge emission region measured at 10K and at 77K. The emission line located at 3.368eV dominates the spectrum in both samples (ZnO with and without MgO buffer annealing) at 10K and 77K. This emission can be divided into two peaks, 3.367eV and 3.363eV and assigned as I2 (ionized donor bound excitons emission) and I4 (Hydrogen donor related emission), respectively. The relative intensity of these donor bound exactions to free exaction emission of the sample without MgO buffer annealing is greater than that of the sample with MgO buffer annealing. Comparison of the PL spectra of ZnO with and without annealing revealed that the intensity of free exciton emission from the sample with MgO buffer annealing is twice of that from the sample without annealing. We also found that the intensity of deep-level broad emission is reduced by about 1/3 by MgO-buffer annealing. Hence, the decrease of deep level emission intensity and the increase of free exciton emission intensity by annealing of MgO buffer corresponds to the reduction of defects of the ZnO film. The PL properties also suggest that there are fewer nonradiative recombination centers in ZnO layers with MgO buffer annealing than those in ZnO layers grown without MgO buffer annealing. The electrical quality was measured by room temperature Hall measurements. We found that the samples have a background n-type carrier concentration. The ZnO samples with MgO buffer annealing has a carrier concentration of 1.17×1017 cm-3 and Hall mobility of 120 cm2/V.s, while the ZnO sample without MgO buffer annealing has a carrier

  16. Effect of PostNitride Annealing on Wear and Corrosion Behavior of Titanium Alloy Ti-6Al-4V

    NASA Astrophysics Data System (ADS)

    Anandan, C.; Mohan, L.

    2016-10-01

    Titanium alloy, Ti-6Al-4V, was plasma nitrided using RF plasma with 100% N at 800 °C and annealed at 850 °C in vacuum. XRD and XPS studies show the formation of titanium nitrides after nitriding and redistribution of nitrogen after annealing. Potentiodynamic polarization and electrochemical impedance spectroscopy studies in Hank's solution show that nitriding decreases the corrosion resistance of the substrate and postnitride annealing improves the corrosion resistance of the nitrided samples. After nitriding, wear rate has decreased by an order of magnitude in reciprocating wear experiments and decreased further in annealed samples in comparison with that of substrate. Thus, postnitride annealing improves both corrosion and wear resistance of the nitrided sample. These improvements are attributed to redistribution of nitrogen and formation of a thin oxide layer on the sample due to annealing.

  17. Effect of PostNitride Annealing on Wear and Corrosion Behavior of Titanium Alloy Ti-6Al-4V

    NASA Astrophysics Data System (ADS)

    Anandan, C.; Mohan, L.

    2016-08-01

    Titanium alloy, Ti-6Al-4V, was plasma nitrided using RF plasma with 100% N at 800 °C and annealed at 850 °C in vacuum. XRD and XPS studies show the formation of titanium nitrides after nitriding and redistribution of nitrogen after annealing. Potentiodynamic polarization and electrochemical impedance spectroscopy studies in Hank's solution show that nitriding decreases the corrosion resistance of the substrate and postnitride annealing improves the corrosion resistance of the nitrided samples. After nitriding, wear rate has decreased by an order of magnitude in reciprocating wear experiments and decreased further in annealed samples in comparison with that of substrate. Thus, postnitride annealing improves both corrosion and wear resistance of the nitrided sample. These improvements are attributed to redistribution of nitrogen and formation of a thin oxide layer on the sample due to annealing.

  18. Effect of annealing temperature on the pitting corrosion resistance of super duplex stainless steel UNS S32750

    SciTech Connect

    Tan Hua; Jiang Yiming; Deng Bo; Sun Tao; Xu Juliang; Li Jin

    2009-09-15

    The pitting corrosion resistance of commercial super duplex stainless steels SAF2507 (UNS S32750) annealed at seven different temperatures ranging from 1030 deg. C to 1200 deg. C for 2 h has been investigated by means of potentiostatic critical pitting temperature. The microstructural evolution and pit morphologies of the specimens were studied through optical/scanning electron microscope. Increasing annealing temperature from 1030 deg. C to 1080 deg. C elevates the critical pitting temperature, whereas continuing to increase the annealing temperature to 1200 deg. C decreases the critical pitting temperature. The specimens annealed at 1080 deg. C for 2 h exhibit the best pitting corrosion resistance with the highest critical pitting temperature. The pit morphologies show that the pit initiation sites transfer from austenite phase to ferrite phase as the annealing temperature increases. The aforementioned results can be explained by the variation of pitting resistance equivalent number of ferrite and austenite phase as the annealing temperature changes.

  19. Experimental tests of irradiation-anneal-reirradiation effects on mechanical properties of RPV plate and weld materials

    SciTech Connect

    Hawthorne, J.R.

    1996-01-01

    The Charpy-V (C{sub V}) notch ductility and tension test properties of three reactor pressure vessel (RPV) steel materials were determined for the 288{degree}C (550{degree}F) irradiated (I), 288{degree}C (550{degree}F) irradiated + 454{degree}C (850{degree}F)-168 h postirradiation annealed (IA), and 288{degree}C (550{degree}F) reirradiated (IAR) conditions. Total fluences of the I condition and the IAR condition were, respectively, 3.33 {times} 10{sup 19} n/cm{sup 2} and 4.18 {times} 10{sup 19} n/cm{sup 2}, E > 1 MeV. The irradiation portion of the IAR condition represents an incremental fluence increase of 1. 05 {times} 10{sup 19} n/cm{sup 2}, E > 1 MeV, over the I-condition fluence. The materials (specimens) were supplied by the Yankee Atomic Electric Company and represented high and low nickel content plates and a high nickel, high copper content weld deposit prototypical of the Yankee-Rowe reactor vessel. The promise of the IAR method for extending the fluence tolerance of radiation-sensitive steels and welds is clearly shown by the results. The annealing treatment produced full C{sub V} upper shelf recovery and full or nearly full recovery in the C{sub V} 41 J (30 ft-lb) transition temperature. The C{sub V} transition temperature increases produced by the reirradiation exposure were 22% to 43% of the increase produced by the first cycle irradiation exposure. A somewhat greater radiation embrittlement sensitivity and a somewhat greater reirradiation embrittlement sensitivity was exhibited by the low nickel content plate than the high nickel content plate. Its high phosphorus content is believed to be responsible. The IAR-condition properties of the surface vs. interior regions of the low nickel content plate are also compared.

  20. Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Armstrong, G.; Uppal, S.; Brotherton, S.; Ayres, J.

    1998-04-01

    A new physical model based on two dimensional simulations for high quality laser re-crystallised poly-Si thin film transistors is presented. It has been shown that to adequately explain the improved subthreshold slope and the lack of saturation of the output characteristics in these transistors, it is essential to distribute the density of defect states between traps in the grains alongside traps localised at grain boundaries. A double exponential density of states has been extracted for thin film transistors (TFTs) annealed at different excimer laser energies, using the field effect conductance method. By splitting the density of states between grain traps and grain boundary traps good fits to the output characteristics have been achieved. Lack of saturation is shown to be due to decrease in potential barrier at grain boundaries with increase in drain bias. At high gate voltages, however, evidence of a self-heating effect similar to that observed in silicon-on-insulator (SOI) transistors is apparent.

  1. Asymmetric magnetoimpedance effect in CoFeSiB amorphous ribbons by combination of field and current annealing for sensor applications

    NASA Astrophysics Data System (ADS)

    Hajiali, Mohammadreza; Mohseni, S. Majid; Roozmeh, S. Ehsan; Moradi, Mehrdad

    2016-08-01

    The roles of applied magnetic field during the current annealing of Co68.15Fe4.35Si12.5B15 soft magnetic amorphous ribbons are studied. Samples heat treated by Joule heating effect in open air and simultaneously in the present of longitudinal external magnetic field showed asymmetric magnetoimpedance (AMI) behavior. The AMI profile can be related to the exchange bias interaction between the soft magnetic amorphous material and a harder magnetic crystalline phase formed on the surface of the ribbon. This effect stems from thermal effect, the transverse Oe field generated from the annealing current which is thickness dependent and the longitudinal external field. The single peak AMI with the field sensitivity of 101%/Oe for DC annealing current is achieved. Our results could address a simple way to achieve the AMI response toward developing high sensitive magnetic field sensors.

  2. Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

    NASA Astrophysics Data System (ADS)

    Wei, Ye; Wei, Ren; Peng, Shi; Zhuangde, Jiang

    2016-07-01

    The bottom-gate structure ZnO based thin film transistors (ZnO-TFTs) using Bi1.5Zn1.0Nb1.5O7 (BZN) thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500 °C on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400 °C obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10‑7 A/cm2 on/off current ratio and field effect mobility of ZnO-TFTs annealed at 400 °C are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300 °C. When the annealing temperature is 400 °C, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21 × 1012cm‑2. Project supported by the National Natural Science Foundation of China (Nos. 51332003, 51202184), the International Science & Technology Cooperation Program of China (Nos. 2010DFB13640, 2011DFA51880), and the “111 Project” of China (No. B14040).

  3. Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

    NASA Astrophysics Data System (ADS)

    Wei, Ye; Wei, Ren; Peng, Shi; Zhuangde, Jiang

    2016-07-01

    The bottom-gate structure ZnO based thin film transistors (ZnO-TFTs) using Bi1.5Zn1.0Nb1.5O7 (BZN) thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500 °C on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400 °C obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10-7 A/cm2 on/off current ratio and field effect mobility of ZnO-TFTs annealed at 400 °C are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300 °C. When the annealing temperature is 400 °C, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21 × 1012cm-2. Project supported by the National Natural Science Foundation of China (Nos. 51332003, 51202184), the International Science & Technology Cooperation Program of China (Nos. 2010DFB13640, 2011DFA51880), and the “111 Project” of China (No. B14040).

  4. Mathematical foundation of quantum annealing

    SciTech Connect

    Morita, Satoshi; Nishimori, Hidetoshi

    2008-12-15

    Quantum annealing is a generic name of quantum algorithms that use quantum-mechanical fluctuations to search for the solution of an optimization problem. It shares the basic idea with quantum adiabatic evolution studied actively in quantum computation. The present paper reviews the mathematical and theoretical foundations of quantum annealing. In particular, theorems are presented for convergence conditions of quantum annealing to the target optimal state after an infinite-time evolution following the Schroedinger or stochastic (Monte Carlo) dynamics. It is proved that the same asymptotic behavior of the control parameter guarantees convergence for both the Schroedinger dynamics and the stochastic dynamics in spite of the essential difference of these two types of dynamics. Also described are the prescriptions to reduce errors in the final approximate solution obtained after a long but finite dynamical evolution of quantum annealing. It is shown there that we can reduce errors significantly by an ingenious choice of annealing schedule (time dependence of the control parameter) without compromising computational complexity qualitatively. A review is given on the derivation of the convergence condition for classical simulated annealing from the view point of quantum adiabaticity using a classical-quantum mapping.

  5. Annealing effects on structure and magnetic properties of Mn-doped TiO2

    NASA Astrophysics Data System (ADS)

    Ahmed, S. A.

    2016-03-01

    Ti1-xMnxO2 powder samples with nominal manganese concentration x=0.02 were synthesized by a solid state reaction route. Thermal treatment of the samples was carried out in air at temperatures of 500, 600 and 700 °C. The samples were investigated by x-ray diffraction, photoluminescence and magnetization measurements. Photoluminescence studies indicated presence of oxygen vacancy defects in TiO2 lattice. Room temperature M-H loops showed a ferromagnetic behavior for all Ti1-xMnxO2 samples, and the magnetization of samples decreases with increasing annealing temperature. Temperature-dependent magnetization measurements showed evidence for ordering temperature of >420 K. However, the experimental results indicate that the ferromagnetism observed in Ti1-xMnxO2 samples is intrinsic rather than associated with secondary phases. It seems that the ferromagnetic phase could originate from interactions between manganese ions and oxygen vacancies and/or defects incorporated in the TiO2 crystal lattice during the thermal treatment of the samples.

  6. Determination of effects of deposition and anneal properties for tetranitratotitanium deposited TiO2 dielectrics

    NASA Astrophysics Data System (ADS)

    Kim, Hyeon-Seag; Campbell, S. A.; Gilmer, D. C.; Kaushik, V.; Conner, J.; Prabhu, L.; Anderson, A.

    1999-03-01

    Carbon and hydrogen free tetranitratotitanium was synthesized, which is believed to thermally decomposed primarily as: Ti(NO3)4→TiO2+4NO2+O2. The by-products of the thermal decomposition of tetranitratotitanium, which include NO2 and O2, may possibly provide a robust ultrathin tunnel interfacial layer. Due to the hydrogen free nature of thermolysis, N2O may form an oxynitride layer which has been shown to produce thermal oxynitrides with higher quality than NH3-based nitride oxides. Unlike titanium tetrakis isopropoxide (TTIP) deposited films, the interface state density more closely follows the "U" shape characteristic of conventional thermal SiO2/Si interfaces. The integrated interface state density is considerably less for the film annealed at higher temperature, which should produce considerably higher inversion layer mobilities. This improvement of the interface, compared to TTIP deposited films, is believed to be due to the elimination of water vapor from the deposition ambient.

  7. Effect of annealing temperatures on the secondary re-crystallization of extruded PM2000 steel bar.

    PubMed

    Chen, C-L; Tatlock, G J; Jones, A R

    2009-03-01

    The ferritic oxide dispersion-strengthened alloy PM2000 is an ideal candidate for high-temperature applications as it contains uniform nano-oxide dispersoids, which act as pinning points to obstruct dislocation and grain boundary motion and therefore impart excellent creep resistance. The development of the microstructure during re-crystallization of oxide dispersion-strengthened alloys has been discussed by a number of authors, but the precise mechanism of secondary re-crystallization still remains uncertain. Hence, this work is aimed at investigating the re-crystallization behaviour of extruded PM2000 bar for different annealing temperatures, using electron backscatter diffraction, in particular, to determine grain orientations, grain boundary misorientation angles, etc. The results show that the as-extruded bar microstructure comprises both low-angle grain boundaries pinned by oxide particles and high-angle boundaries that will have inherent boundary mobility to allow boundary migration. In addition, dynamical re-crystallization was found in the outer region of the non-heat-treated PM2000 bar, which suggested that deformation heterogeneities can be introduced during thermo-mechanical processing that enhance the nucleation of re-crystallization. Subsequent heat treatments promote and stimulate secondary re-crystallization, giving rise to large grains with few sub-grain boundaries. PMID:19250468

  8. Effect of annealing temperatures on the secondary re-crystallization of extruded PM2000 steel bar.

    PubMed

    Chen, C-L; Tatlock, G J; Jones, A R

    2009-03-01

    The ferritic oxide dispersion-strengthened alloy PM2000 is an ideal candidate for high-temperature applications as it contains uniform nano-oxide dispersoids, which act as pinning points to obstruct dislocation and grain boundary motion and therefore impart excellent creep resistance. The development of the microstructure during re-crystallization of oxide dispersion-strengthened alloys has been discussed by a number of authors, but the precise mechanism of secondary re-crystallization still remains uncertain. Hence, this work is aimed at investigating the re-crystallization behaviour of extruded PM2000 bar for different annealing temperatures, using electron backscatter diffraction, in particular, to determine grain orientations, grain boundary misorientation angles, etc. The results show that the as-extruded bar microstructure comprises both low-angle grain boundaries pinned by oxide particles and high-angle boundaries that will have inherent boundary mobility to allow boundary migration. In addition, dynamical re-crystallization was found in the outer region of the non-heat-treated PM2000 bar, which suggested that deformation heterogeneities can be introduced during thermo-mechanical processing that enhance the nucleation of re-crystallization. Subsequent heat treatments promote and stimulate secondary re-crystallization, giving rise to large grains with few sub-grain boundaries.

  9. Annealing effects on the structure, photoluminescence, and magnetic properties of GaN/Mn{sub 3}O{sub 4} core-shell nanowires

    SciTech Connect

    Kim, Hyo Sung; Na, Han Gil; Yang, Ju Chan; Jung, Jong Hoon; Koo, Yong Sung; Hur, Nam Jung; Kim, Hyoun Woo

    2010-10-15

    Nanowires consisting of GaN/Mn{sub 3}O{sub 4} were prepared using a two-step approach that involved dipping the as-synthesized GaN nanowires into an aqueous manganese acetate solution. To examine the effects of annealing, GaN/Mn{sub 3}O{sub 4} core-shell nanowires were heated thermally to 700 {sup o}C in N{sub 2} ambient. Transmission electron microscopy showed that the continuous Mn{sub 3}O{sub 4} shell layer had agglomerated to expose a bare GaN core surface after thermal annealing. The magnetic measurements showed that the ferromagnetic behavior of the GaN nanowires had been suppressed by coating with the Mn{sub 3}O{sub 4} shell, without significant change by the subsequent thermal annealing. The GaN/Mn{sub 3}O{sub 4} core-shell nanowires exhibited blue, green, and red photoluminescence (PL) emission. The red emission was enhanced by thermal annealing. This paper discusses the associated mechanism for the variations in PL and magnetic properties of GaN/Mn{sub 3}O{sub 4} core-shell nanowires. - Abstract: Novel GaN/Mn{sub 3}O{sub 4} core-shell nanowires were synthesized and the effects of thermal annealing on the structure, photoluminescence, and magnetic properties were investigated.

  10. Thermal Conductivity Changes in Titanium-Graphene Composite upon Annealing

    NASA Astrophysics Data System (ADS)

    Jagannadham, Kasichainula

    2016-02-01

    Ti-graphene composite films were prepared on polished Ti substrates by deposition of graphene platelets from suspension followed by deposition of Ti by magnetron sputtering. The films were annealed at different temperatures up to 1073 K (800 °C) and different time periods in argon atmosphere. The annealed films were characterized by X-ray diffraction for phase identification, scanning electron microscopy for microstructure, energy-dispersive spectrometry for chemical analysis, atomic force microscopy for surface roughness, and transient thermoreflectance for thermal conductivity and interface thermal conductance. The results showed that the interface between the composite film and Ti substrate remained continuous with the absence of voids. Oxygen concentration in the composite films has increased for higher temperature and time of annealing. TiO2 and TiC phases are formed only in the film annealed at 1073 K (800 °C). The thermal conductivity of the composite film decreased with increasing oxygen concentration. The effective thermal conductance of the film annealed at 1073 K (800 °C) was significantly lower. The interface thermal conductance between the composite film and the Ti substrate is also reduced for higher oxygen concentration. Formation of microscopic TiO2 phase bound by interface boundaries and oxygen incorporation is considered responsible for the lower thermal conductance of the Ti-graphene composite annealed at 1073 K (800 °C).

  11. Effect of thermal annealing treatments on the optical activation of Tb3+ -doped amorphous SiC:H thin films

    NASA Astrophysics Data System (ADS)

    Guerra, J. A.; De Zela, F.; Tucto, K.; Montañez, L.; Töfflinger, J. A.; Winnacker, A.; Weingärtner, R.

    2016-09-01

    The effect of the annealing temperature on the light emission intensity of Tb-doped a-SiC:H thin films was investigated for different Tb concentrations under sub-bandgap photon excitation. We present a detailed discussion of rare-earth thermal activation in order to determine the optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity. Two independent processes that enhance the emission intensity are identified and incorporated in a rate equation. These are the thermally-induced increase of luminescence centers and the inhibition of host-mediated non-radiative recombinations. Finally, the presented analysis revealed a suppression of the self-quenching effect when increasing the annealing temperature.

  12. Effect of air annealing on the color center in Yb:Y3Al5O12 transparent ceramics with MgO as sintering additive

    NASA Astrophysics Data System (ADS)

    Lu, Zhongwen; Lu, Tiecheng; Wei, Nian; Zhang, Wei; Ma, Benyuan; Qi, Jianqi; Guan, Yongbing; Chen, Xingtao; Wu, Huajun; Zhao, Yu

    2015-09-01

    High quality Yb:Y3Al5O12 (YAG) transparent ceramics were fabricated by vacuum sintering with MgO as sintering aids. The Yb:YAG samples were annealed at 1250-1450 °C for 20 h in air. The experimental results showed that the transparency of Yb:YAG samples declined markedly with the annealing temperatures of 1250-1450 °C. The samples became increasingly orange-yellow in color with the increase of annealing temperature. The potential reasons of discoloration were discussed for the first time. It was attributed to the complex color center [Mg2+F+] formed during the annealing, which was evidenced by optical absorption in the range of 300-500 nm wavelength and the presence of an electron spin resonance (ESR) line at g = 1.9806. The formation mechanism of the complex color center was explained in detail. The complex color center can be eliminated after post-HIP (hot isostatic pressing). And by air annealing and post-HIP, the transmittance of the samples increased from 80.3% to 83.4%.

  13. The effect of annealing at 1500 °C on migration and release of ion implanted silver in CVD silicon carbide

    NASA Astrophysics Data System (ADS)

    MacLean, H. J.; Ballinger, R. G.; Kolaya, L. E.; Simonson, S. A.; Lewis, N.; Hanson, M. E.

    2006-10-01

    The transport of silver in CVD β-SiC has been studied using ion implantation. Silver ions were implanted in β-SiC using the ATLAS accelerator facility at the Argonne National Laboratory. Ion beams with energies of 93 and 161 MeV were used to achieve deposition with peak concentrations of approximately 26 wt% at depths of approximately 9 and 13 μm, respectively. As-implanted samples were then annealed at 1500 °C for 210 or 480 h. XPS, SEM, TEM, STEM, and optical methods were used to analyze the material before and after annealing. Silver concentration profiles were determined using XPS before and after annealing. STEM and SEM equipped with quantitative chemical analysis capability were used to more fully characterize the location and morphology of the silver before and after annealing. The results show that, within the uncertainty of measurement techniques, there is no silver migration, via either inter- or intra-granular paths, for the times and temperature studied. Additionally, the silver was observed to phase separate within the SiC after annealing. The results of this work do not support the long held assumption that silver release from CVD SiC, used for gas-reactor coated particle fuel, is dominated by grain boundary diffusion.

  14. Study of the effect of annealing on defects in Fe Mn Si Cr Ni C alloy by slow positron beam

    NASA Astrophysics Data System (ADS)

    Mostafa, Khaled. M.; De Baerdemaeker, J.; Van Caenegem, N.; Segers, D.; Houbaert, Y.

    2008-10-01

    FeMnSi shape memory alloys (SMAs) have received much attention as one-way SMAs due to their cost-effectiveness. Variable-energy (0-30 keV) positron beam studies have been carried out on a Fe-Mn-Si-Cr-Ni-C alloy with different degrees of deformation. Doppler broadening profiles of the positron annihilation as a function of incident positron energy were shown to be quite sensitive to defects introduced by deformation. The variation of the nature and the concentration of defects are studied as a function of isochronal annealing temperature. These results are correlated with the data measured with the positron annihilation lifetime spectroscopy (PALS). The positron annihilation results are compared to XRD and optical microscopy (OM).

  15. Nanocrystalline Cs{sub x}WO{sub 3} particles: Effects of N{sub 2} annealing on microstructure and near-infrared shielding characteristics

    SciTech Connect

    Liu, Jing-Xiao; Shi, Fei; Dong, Xiao-Li; Xu, Qiang; Yin, Shu; Sato, Tsugio

    2013-10-15

    In order to further improve the near-infrared shielding properties of cesium tungsten bronze (Cs{sub x}WO{sub 3}) for solar filter applications, Cs{sub x}WO{sub 3} particles were prepared by solvothermal reaction method and the effects of nitrogen annealing on the microstructure and near-infrared shielding properties of Cs{sub x}WO{sub 3} were investigated. The obtained Cs{sub x}WO{sub 3} samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy and spectrophotometer. The results indicate that nanosheet-like Cs{sub x}WO{sub 3} particles with hexagonal structure began to transform into nanorods after annealed at temperature higher than 600 °C. The near-infrared shielding properties of Cs{sub x}WO{sub 3} particles could be further improved by N{sub 2} annealing at 500–700 °C. Particularly, the 500 °C-annealed Cs{sub x}WO{sub 3} samples in the N{sub 2} atmosphere showed best near-infrared shielding properties. It was suggested that the excellent near-infrared shielding ability of the 500 °C-annealed Cs{sub x}WO{sub 3} samples is correlated with its minimum O/W atomic ratio and most oxygen vacancies. Highlights: • N{sub 2} annealing could further improve the near-infrared (NIR) shielding of Cs{sub x}WO{sub 3}. • Effects of N{sub 2} annealing on microstructure and NIR shielding of Cs{sub x}WO{sub 3} were studied. • The 500 °C-N{sub 2}-annealed Cs{sub x}WO{sub 3} exhibited minimum O/W ratio and most oxygen vacancies. • The 500 °C-N{sub 2}-annealed Cs{sub x}WO{sub 3} particles exhibited best NIR shielding properties.

  16. Effects of Phosphorous-doping and High Temperature Annealing on CVD grown 3C-SiC

    SciTech Connect

    I. J. van Rooyen; J. H. Neethling; A. Henry; E. Janzen; S. M. Mokoduwe; A. Janse van Vuuren; E. Olivier

    2012-10-01

    The integrity and property behavior of the SiC layer of the Tri-isotropic (TRISO) coated particle (CP) for high temperature reactors (HTR) are very important as the SiC layer is the main barrier for gaseous and metallic fission product release. This study describes the work done on un-irradiated SiC samples prepared with varying phosphorus levels to simulate the presence of phosphorus due to transmutation. 30Si transmutes to phosphorous (31P) and other transmutation products during irradiation, which may affect the integrity of the SiC layer. The P-doping levels of the SiC samples used in this study cover the range from 1.1x1015 to 1.2x1019 at/cm3 and are therefore relevant to the PBMR operating conditions. Annealing from 1000 C to 2100 C was performed to study the possible changes in nanostructures and various properties due to temperature. Characterization results by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM), are reported in this article. As grain boundary diffusion is identified as a possible mechanism by which 110mAg, one of the fission activation products, might be released through intact SiC layer, grain size measurements is also included in this study. Temperature is evidently one of the factors/parameters amongst others known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. The ASTM E112 method as well as electron back scatter diffraction (EBSD) was used to determine the grain size of various commercial SiC samples and the SiC layer in experimental PBMR Coated Particles (CPs) after annealing at temperatures ranging from 1600 C to 2100 C. The HRTEM micrograph of the decomposition of SiC at 2100 C are shown and discussed. Nanotubes were not identified during the TEM and HRTEM analysis although graphitic

  17. GenAnneal: Genetically modified Simulated Annealing

    NASA Astrophysics Data System (ADS)

    Tsoulos, Ioannis G.; Lagaris, Isaac E.

    2006-05-01

    A modification of the standard Simulated Annealing (SA) algorithm is presented for finding the global minimum of a continuous multidimensional, multimodal function. We report results of computational experiments with a set of test functions and we compare to methods of similar structure. The accompanying software accepts objective functions coded both in Fortran 77 and C++. Program summaryTitle of program:GenAnneal Catalogue identifier:ADXI_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/ADXI_v1_0 Program available from: CPC Program Library, Queen's University of Belfast, N. Ireland Computer for which the program is designed and others on which it has been tested: The tool is designed to be portable in all systems running the GNU C++ compiler Installation: University of Ioannina, Greece on Linux based machines Programming language used:GNU-C++, GNU-C, GNU Fortran 77 Memory required to execute with typical data: 200 KB No. of bits in a word: 32 No. of processors used: 1 Has the code been vectorized or parallelized?: No No. of bytes in distributed program, including test data, etc.:84 885 No. of lines in distributed program, including test data, etc.:14 896 Distribution format: tar.gz Nature of physical problem: A multitude of problems in science and engineering are often reduced to minimizing a function of many variables. There are instances that a local optimum does not correspond to the desired physical solution and hence the search for a better solution is required. Local optimization techniques are frequently trapped in local minima. Global optimization is hence the appropriate tool. For example, solving a non-linear system of equations via optimization, employing a "least squares" type of objective, one may encounter many local minima that do not correspond to solutions (i.e. they are far from zero). Typical running time: Depending on the objective function. Method of solution: We modified the process of step selection that the traditional Simulated

  18. Effect of annealing on the properties of Sb doped ZnO thin films prepared by spray pyrolysis technique

    SciTech Connect

    Kumar, N. Sadananda; Bangera, Kasturi V.; Shivakumar, G. K.

    2014-01-28

    Sb doped ZnO thin films have been deposited on glass substrate at 450°C using spray pyrolysis technique. The X-ray diffraction studies revealed that the as deposited films are polycrystalline in nature with (100) preferred orientation. Whereas the films annealed at 450° C for 6h show a preferential orientation along (101) direction. Crystallites size varies from 15.7 nm to 34.95 nm with annealing duration. The Scanning electron microscopic analysis shows the plane and smooth surface of the films. The optical properties of annealed films have shown a variation in the band gap between 3.37 eV and 3.19 eV. Transparency of as grown and annealed films decreases from 78 % to 65% respectively in the visible region. The electrical conductivity of the as grown film shows an increase in the electrical conductivity by one order of magnitude with increase in the annealing duration.

  19. Rietveld analysis of the effect of annealing atmosphere on phase evolution of nanocrystalline TiO2 powders.

    PubMed

    Salari, M; Rezaee, M; Chidembo, A T; Konstantinov, K; Liu, H K

    2012-06-01

    The structural evolution of nanocrystalline TiO2 was studied by X-ray diffraction (XRD) and the Rietveld refinement method (RRM). TiO2 powders were prepared by the sol-gel technique. Post annealing of as-synthesized powders in the temperature range from 500 degrees C to 800 degrees C under air and argon atmospheres led to the formation of TiO2 nanoparticles with mean crystallite size in the range of 37-165 nm, based on the Rietveld refinement results. It was found that the phase structure, composition, and crystallite size of the resulting particles were dependent on not only the annealing temperature, but also the annealing atmosphere. Rietveld refinement of the XRD data showed that annealing the powders under argon atmosphere promoted the polymorphic phase transformation from anatase to rutile. Field emission scanning electron microscopy (FESEM) was employed to investigate the morphology and size of the annealed powders.

  20. Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric

    NASA Astrophysics Data System (ADS)

    Wen, Ming; Xu, Jingping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

    2016-09-01

    Atomic layer deposited HfO2 annealed in different ambients (N2, O2, and NH3) is used to replace SiO2 as a gate dielectric for fabricating back-gated multilayer MoS2 transistors. Excellent electrical properties such as a mobility of 15.1 cm2/(V·s), an on/off ratio exceeding 107, and a hysteresis of 0.133 V are achieved for samples annealed in NH3 at 400 °C for 10 min. This is caused by the NH3 annealing passivation effects that reduce defective states in the HfO2 dielectric and the interface. The capacitance equivalent thickness is only 7.85 nm, which is quite small for a back-gated MoS2 transistor and is conducive to the scaling down of the device.

  1. Annealing effects on InGaAsN/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k -p calculations

    NASA Astrophysics Data System (ADS)

    Bouragba, T.; Mihailovic, M.; Reveret, F.; Disseix, P.; Leymarie, J.; Vasson, A.; Damilano, B.; Hugues, M.; Massies, J.; Duboz, J. Y.

    2007-04-01

    The effects of thermal annealing for In0.25Ga0.75As1-yNy/GaAs multiquantum wells (MQWs) have been investigated through thermally detected optical absorption. The QW transition energies have been calculated by using a ten-band k -p model including the band anticrossing model for the description of the InGaAsN band gap variation. The modification of the In concentration profile due to In-Ga interdiffusion during thermal annealing is taken into account through the Fick law. A good agreement is obtained between calculated and experimental energies of optical transitions. Our results show that the In-Ga interdiffusion phenomenon observed in a nitrogen free sample is moderately enhanced by the introduction of nitrogen. The blueshift of optical transitions induced by the annealing process is the result of both In-Ga interdiffusion and rearrangement of local nitrogen environment.

  2. EFFECT OF PRE-ANNEALING TEMPERATURE ON THE GROWTH OF ALIGNED α-Fe2O3 NANOWIRES VIA A TWO-STEP THERMAL OXIDATION

    NASA Astrophysics Data System (ADS)

    Rashid, Norhana Mohamed; Kishi, Naoki; Soga, Tetsuo

    2016-03-01

    Pre-annealing as part of a two-step thermal oxidation process has a significant effect on the growth of hematite (α-Fe2O3) nanowires on Fe foil. High-density aligned nanowires were obtained on iron foils pre-annealed at 300∘C under a dry air flow for 30min. The X-ray diffraction (XRD) patterns indicate that the nanowires are transformed from the small α-Fe2O3 grains and uniquely grow in the (110) direction. The formation of a high-density of small grains by pre-annealing improved the alignment and density of the α-Fe2O3 nanowires.

  3. Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness

    SciTech Connect

    Sengupta, S.; Halder, N.; Chakrabarti, S.

    2010-11-15

    We have investigated the effect of post-growth rapid thermal annealing on self-assembled InAs/GaAs bilayer quantum dot samples having very thin barrier thickness (7.5-8.5 nm). In/Ga interdiffusion in the samples due to annealing is presumed to be controlled by the vertical strain coupling from the seed dots in bilayer heterostructure. Strain coupling from embedded seed QD layer maintains a strain relaxed state in active top islands of the bilayer quantum dot sample grown with comparatively thick spacer layer (8.5 nm). This results in minimum In/Ga interdiffusion. However controlled interdiffusion across the interface between dots and GaAs barrier, noticeably enhances the emission efficiency in such bilayer quantum dot heterostructure on annealing up to 700 {sup o}C.

  4. Study on the effect of heat-annealing and irradiation on spectroscopic properties of Bi:alpha-BaB2O4 single crystal.

    PubMed

    Xu, Jun; Zhao, Hengyu; Su, Liangbi; Yu, Jun; Zhou, Peng; Tang, Huili; Zheng, Lihe; Li, Hongjun

    2010-02-15

    The absorption, excitation, and ultrabroadband near-infrared luminescence spectra of Bismuth were investigated in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4)(alpha-BBO) single crystals, respectively. Energy-level diagrams of the near-infrared luminescent centers were fixed. The electronic transition energies of near-infrared active centers are basically consistent with the multiplets of free Bi(+) ions. The minor difference of the energy-level diagrams of Bi(+) ions in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4) crystals can be ascribed to the difference of the local lattice environments. The involved physical and chemical processes were discussed. The effect of Ar-, air-annealing and electron-irradiation on Bi:alpha-BaB(2)O(4) crystal were also investigated.

  5. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    NASA Astrophysics Data System (ADS)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  6. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  7. Rapid thermal annealing and modulation-doping effects on InAs/GaAs quantum dots photoluminescence dependence on excitation power

    NASA Astrophysics Data System (ADS)

    Chaâbani, W.; Melliti, A.; Maaref, M. A.; Testelin, C.; Lemaître, A.

    2016-07-01

    The optical properties of p-doped and annealed InAs/GaAs quantum dots (QDs) was investigated by photoluminescence (PL) as a function of temperature and excitation power density (Pexc). At low-T, PL spectra of rapid thermal annealing (RTA) and p-modulation doped QDs show an energy blueshift and redshift, respectively. A superlinear dependence of integrated PL intensity on Pexc at high-T was found only for undoped QD. The superlinearity was suppressed by modulation-doping and RTA effects. A linear dependence of IPL at all temperatures and a decrease of the carrier-carrier Coulomb interaction at high-T was found after RTA.

  8. The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures

    NASA Astrophysics Data System (ADS)

    Lindberg, P. F.; Lipp Bregolin, F.; Wiesenhütter, K.; Wiesenhütter, U.; Riise, H. N.; Vines, L.; Prucnal, S.; Skorupa, W.; Svensson, B. G.; Monakhov, E. V.

    2016-05-01

    The effect of millisecond flash lamp annealing (FLA) on aluminum doped ZnO (AZO) films and their interface with Si have been studied. The AZO films were deposited by magnetron sputtering on Si (100) substrates. The electrical and structural properties of the film and AZO/Si structures were characterized by current-voltage, capacitance-voltage, and deep level transient spectroscopy measurements, X-ray diffraction, and secondary ion mass spectrometry. The resistivity of the AZO film is reduced to a close to state-of-the-art value of 2 × 10-4 Ω cm after FLA for 3 ms with an average energy density of 29 J/cm2. In addition, most of the interfacial defects energy levels are simultaneously annealed out, except for one persisting shallow level, tentatively assigned to the vacancy-oxygen complex in Si, which was not affected by FLA. Subsequent to the FLA, the samples were treated in N2 or forming gas (FG) (N2/H2, 90/10%mole) ambient at 200-500 °C. The latter samples maintained the low resistivity achieved after the FLA, but not the former ones. The interfacial defect level persisting after the FLA is removed by the FG treatment, concurrently as another level emerges at ˜0.18 eV below the conduction band. The electrical data of the AZO films are discussed in term of point defects controlling the resistivity, and it is argued that the FLA promotes formation of electrically neutral clusters of Zink vacancies (VZn's) rather than passivating/compensating complexes between the Al donors and VZn's.

  9. Effect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing

    NASA Astrophysics Data System (ADS)

    Hooda, Sonu; Khan, S. A.; Satpati, B.; Stange, D.; Buca, D.; Bala, M.; Pannu, C.; Kanjilal, D.; Kabiraj, Debdulal

    2016-03-01

    Swift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous structure with voids aligned along ion trajectory due to local melting and resolidification during high electronic energy deposition. The present study focuses on the irradiation temperature- and incident angle-dependent growth dynamics and shape evolution of these voids due to 100 MeV Ag ions irradiation. The d-Ge layers were prepared by multiple low-energy Ar ion implantations in single crystalline Ge with damage formation of ~7 displacements per atom. Further, these d-Ge layers were irradiated using 100 MeV Ag ions at two different temperatures (77 and 300 K) and three different angles (7°, 30° and 45°). After SHI irradiation, substantial volume expansion of d-Ge layer is detected which is due to formation of nanoscale voids. The volume expansion is observed to be more in the samples irradiated at 77 K as compared to 300 K at a given irradiation fluence. It is observed that the voids are of spherical shape at low ion irradiation fluence. The voids grow in size and change their shape from spherical to prolate spheroid with increasing ion fluence. The major axis of spheroid is observed to be aligned approximately along the ion beam direction which has been confirmed by irradiation at three different angles. The change in shape is a consequence of combination of compressive strain and plastic flow developed due to thermal spike generated along ion track. Post-SHI irradiation annealing shows increase in size of voids and reversal of shape from prolate spheroid towards spherical through strain relaxation. The stability of voids was studied with the effect of post-growth annealing.

  10. Effect of Annealing on Microstructure and Thermoelectric Properties of Sb-Doped Mg2Si0.5Sn0.5 Solid Solution

    NASA Astrophysics Data System (ADS)

    Liu, Ji-Wei; Song, Minghui; Takeguchi, Masaki; Tsujii, Naohito; Isoda, Yukihiro

    2016-01-01

    A 0.33 mol.% Sb-doped Mg2Si0.5Sn0.5 solid solution was synthesized by combining a liquid-solid reaction and hot-pressing process. The effect of annealing (1068 K, 250 h) on microstructure and thermoelectric properties of the solid solution was studied by x-ray diffraction (XRD), scanning electron microscopy, electron probe microanalysis, transmission electron microscopy, and thermoelectric measurements. The successful synthesis of the solid solution with an antifluorite structure was confirmed by XRD. The as-prepared sample contained Si, Sn, and MgO inclusions tens of nanometers in size. After annealing, Si and Sn inclusions disappeared, while the MgO nanoparticles remained almost unchanged; the charge carrier concentration and electrical conductivity decreased and the lattice thermal conductivity increased. As a result, the thermoelectric figure of merit ZT ˜ 0.34 at 394 K for the as-prepared sample deteriorated to ˜0.24 at 388 K after the annealing. The results suggest the presence of a high density of point defects, such as Mg interstitials in the as-prepared sample. The density of these Mg interstitials was reduced by the annealing, thereby affecting the charge carrier concentration and electrical conductivity. The increase in the lattice thermal conductivity upon annealing is attributed to the disappearance of point defects, grain boundaries (grain growth) and Si and Sn inclusions, which all act as phonon scattering centers. Thus, point defects and nanoinclusions might be important for optimizing the thermoelectric properties of a material. This work provides new insights into the effect of annealing on the microstructure and its relationship with the thermoelectric properties of Sb-doped Mg2Si0.5Sn0.5 solid solutions. It also provides hints for developing Mg2Si0.5Sn0.5-based materials with superior thermoelectric properties.

  11. Quantum annealing speedup over simulated annealing on random Ising chains

    NASA Astrophysics Data System (ADS)

    Zanca, Tommaso; Santoro, Giuseppe E.

    2016-06-01

    We show clear evidence of a quadratic speedup of a quantum annealing (QA) Schrödinger dynamics over a Glauber master equation simulated annealing (SA) for a random Ising model in one dimension, via an equal-footing exact deterministic dynamics of the Jordan-Wigner fermionized problems. This is remarkable, in view of the arguments of H. G. Katzgraber et al. [Phys. Rev. X 4, 021008 (2014), 10.1103/PhysRevX.4.021008], since SA does not encounter any phase transition, while QA does. We also find a second remarkable result: that a "quantum-inspired" imaginary-time Schrödinger QA provides a further exponential speedup, i.e., an asymptotic residual error decreasing as a power law τ-μ of the annealing time τ .

  12. The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films.

    PubMed

    Orgiu, Emanuele; Squillaci, Marco A; Rekab, Wassima; Börjesson, Karl; Liscio, Fabiola; Zhang, Lei; Samorì, Paolo

    2015-03-28

    Herein we report on the charge transport properties of spin-coated thin films of an n-type fullerene derivative, i.e. the indene-C60 bis-adduct (ICBA). In particular, the effects of annealing temperature and duration as well as surface functionalization are explored. Electron mobilities approaching 0.1 cm(2) V(-1) s(-1) are reported.

  13. The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system

    NASA Astrophysics Data System (ADS)

    Ahmed, A. M.; Mohamed, Abd El-Mo'ez A.; Mohamed, H. F.; Diab, A. K.; Mohamed, Aml M.; Mazen, A. E. A.

    2016-09-01

    This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La0.7Ba0.3MnO3)1-x/(NiO)x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La0.7Ba0.3MnO3, in contrast to (La0.7Ba0.3MnO3)0.9/(NiO)0.1 composite.

  14. Effect of air annealing on structure and magnetic properties of Sn1-xFexO2 thin films

    NASA Astrophysics Data System (ADS)

    Kuppan, M.; Begam, M. Regana; Babu, S. Harinath; Kaleemulla, S.; Rao, N. Madhusudhana; Krishnamoorthi, C.

    2016-05-01

    Sn1-xFexO2 (x = 0.07) thin films were prepared on to glass substrates using flash evaporation technique and annealed in air at different temperatures. The X-ray diffraction study showsed that all the thin films annealed at different temperatures were in tetragonal rutile structure of SnO2. The Elemental analysis confirms the presence of Fe and Sn and O in the films. The magnetic measurements were carried out using vibrating sample magnetometer and found that the strength of magnetization decreased with increase of annealing temperature.

  15. Effect of annealing temperature on the optical property of high Cd content CdZnO films

    NASA Astrophysics Data System (ADS)

    Liu, Teren; Wang, Dongbo; Guo, Fengyun; Jiao, Shujie; Wang, Jinzhong; Liu, Yuhang; Luan, Chunyang; Cao, Wenwu; Zhao, Liancheng

    2016-09-01

    CdZnO films with high Cd contents (59%) have been deposited on quartz substrate by radio-frequency (RF) magnetron sputtering. The as-deposited CdZnO films can hardly show detectable photoluminescence (PL). However, once subjected to suitable annealing temperature, the CdZnO films exhibit pronounced PL. Furthermore, when the annealing temperature at 300 °C and above, that the CdZnO are changed from the single phase of the rs structure to involving w, zb, and rs phases. Consequently, reliable formation and optical property improvement of the CdZnO layers are achieved through annealing temperature at 300 °C.

  16. Effect of oxygen annealing on the multiferroic properties of Ca{sup 2+} doped BiFeO{sub 3} nanoceramics

    SciTech Connect

    Tirupathi, Patri; Mandal, Satish Kumar; Chandra, Amreesh

    2014-12-28

    The high leakage current in divalent ion doped BiFeO{sub 3} systems is limiting their large scale application. It is clearly shown that the methodology of oxygen annealing will prove to be an effective procedure for suppressing the detrimental consequences that originate from the oxygen vacancies. The samples annealed under oxygen also show different particle morphologies and packing density that can help in tuning the relevant physical properties, viz., magnetic, ferroelectric, and magnetoelectric. The difference in magnetic behaviour in samples annealed in air and oxygen can be explained in terms of the modification in the Fe-O-Fe bonds, domain wall pinning centres, and crystal anisotropy. Another important observation is the stabilization of a dielectric anomaly near the magnetic transition temperature. This observation can make this multiferroic system very interesting for application in sensors where the change in the magnetic parameters can be observed by monitoring the electrical parameters. Detailed analysis of the dielectric and impedance curves indicate towards the presence of non-Debye type processes in samples obtained by annealing in air or oxygen. From the calculated activation energy values, the vacancy related relaxation mechanism is predominant in air annealed samples, while the oxygen annealed samples show the presence of two type of relaxation processes, viz., electron hopping mechanism stabilizes at low temperature while, at higher temperatures, the process associated with the diffusion of doubly ionized oxygen ions predominates. The ac-conductivity data suggests that the correlated barrier tunnelling mechanism, where single electron or two electrons hopping through neighbouring lattice sites leads to ac-conduction.

  17. Effects of annealing on the polymorphic structure of starches from sweet potatoes (Ayamurasaki and Sunnyred cultivars) grown at various soil temperatures.

    PubMed

    Genkina, Natalia K; Wasserman, Lyubov A; Noda, Takahiro; Tester, Richard F; Yuryev, Vladimir P

    2004-04-28

    Starches extracted from the sweet potato cultivars Sunnyred and Ayamurasaki grown at 15 or 33 degrees C (soil temperature) were annealed in excess water (3 mg starch/mL water) for different times (1, 4, 8 or 10h) at the temperatures 2-3 degrees K below the onset melting temperature. The structures of annealed starches, as well as their gelatinisation (melting) properties, were studied using high-sensitivity differential scanning calorimetry (HSDSC). In excess water, the single endothermic peak shifted to higher temperatures, while the melting (gelatinisation) enthalpy changed only very slightly, if any. The elevation of gelatinisation temperature was associated with increasing order/thickness of the crystalline lamellae. The only DSC endotherm identified in 0.6 M KCl for Sunnyred starch grown at 33 degrees C was attributed to A-type polymorphic structure. The multiple endothermic forms observed by DSC performed in 0.6M KCl for annealed starches from both cultivars grown at 15 degrees C provided evidence of a complex C-type (A- plus B-type) polymorphic structure of crystalline lamellae. The A:B-ratio of two polymorphic forms increased upon annealing due to partial transformation of B- to A-polymorph, which was time dependent. Long heating periods facilitated the maximal transformation of B- to A-polymorph associated with limited A:B ratio.

  18. Effects of annealing on the polymorphic structure of starches from sweet potatoes (Ayamurasaki and Sunnyred cultivars) grown at various soil temperatures.

    PubMed

    Genkina, Natalia K; Wasserman, Lyubov A; Noda, Takahiro; Tester, Richard F; Yuryev, Vladimir P

    2004-04-28

    Starches extracted from the sweet potato cultivars Sunnyred and Ayamurasaki grown at 15 or 33 degrees C (soil temperature) were annealed in excess water (3 mg starch/mL water) for different times (1, 4, 8 or 10h) at the temperatures 2-3 degrees K below the onset melting temperature. The structures of annealed starches, as well as their gelatinisation (melting) properties, were studied using high-sensitivity differential scanning calorimetry (HSDSC). In excess water, the single endothermic peak shifted to higher temperatures, while the melting (gelatinisation) enthalpy changed only very slightly, if any. The elevation of gelatinisation temperature was associated with increasing order/thickness of the crystalline lamellae. The only DSC endotherm identified in 0.6 M KCl for Sunnyred starch grown at 33 degrees C was attributed to A-type polymorphic structure. The multiple endothermic forms observed by DSC performed in 0.6M KCl for annealed starches from both cultivars grown at 15 degrees C provided evidence of a complex C-type (A- plus B-type) polymorphic structure of crystalline lamellae. The A:B-ratio of two polymorphic forms increased upon annealing due to partial transformation of B- to A-polymorph, which was time dependent. Long heating periods facilitated the maximal transformation of B- to A-polymorph associated with limited A:B ratio. PMID:15063196

  19. Classical Simulated Annealing Using Quantum Analogues

    NASA Astrophysics Data System (ADS)

    La Cour, Brian R.; Troupe, James E.; Mark, Hans M.

    2016-08-01

    In this paper we consider the use of certain classical analogues to quantum tunneling behavior to improve the performance of simulated annealing on a discrete spin system of the general Ising form. Specifically, we consider the use of multiple simultaneous spin flips at each annealing step as an analogue to quantum spin coherence as well as modifications of the Boltzmann acceptance probability to mimic quantum tunneling. We find that the use of multiple spin flips can indeed be advantageous under certain annealing schedules, but only for long anneal times.

  20. Effect of annealing on Cu precipitates in H ion irradiated Fe-0.6%Cu studied by positron annihilation

    NASA Astrophysics Data System (ADS)

    Jin, Shuoxue; Zhang, Peng; Lu, Eryang; Wang, Baoyi; Yuan, Daqing; Wei, Long; Cao, Xingzhong

    2016-10-01

    Fe-0.6%Cu alloy was irradiated with H ions to 0.1 dpa, and then annealed for 30 min from 150 °C to 500 °C. We focused the evolution of Cu precipitates in irradiated Fe-0.6%Cu alloy after the isochronal annealing from the perspective of positron annihilation. The ΔW parameters after thermal annealing (400 °C and 500 °C) were much larger than that induced by 0.1 dpa H irradiation. Annealing could promote the aggregation of the Cu-vacancy complexes, and form the Cu cluster-vacancies complexes. When the vacancy-like defects recovered around 500 °C, it meant the formation and growing of the defect-free Cu precipitates.

  1. Structural characterization of Peruvian carrot (Arracacia xanthorrhiza) starch and the effect of annealing on its semicrystalline structure.

    PubMed

    Rocha, Thais S; Cunha, Verena A G; Jane, Jay-Lin; Franco, Celia M L

    2011-04-27

    Structural characteristics of native and annealed Peruvian carrot (Arracacia xanthorrhiza) starches were determined and compared to those of cassava and potato starches. Peruvian carrot starch presented round and irregular shaped granules, low amylose content and B-type X-ray pattern. Amylopectin of this starch contained a large proportion of long (DP > 37) and short (DP 6-12) branched chains. These last ones may contribute to its low gelatinization temperature. After annealing, the gelatinization temperatures of all starches increased, but the ΔH and the crystallinity increased only in Peruvian carrot and potato starches. The annealing process promoted a higher exposure of Peruvian carrot amylose molecules, which were more quickly attacked by enzymes, whereas amylopectin molecules became more resistant to hydrolysis. Peruvian carrot starch had structural characteristics that differed from those of cassava and potato starches. Annealing affected the semicrystalline structure of this starch, enhancing its crystallinity, mainly due to a better interaction between amylopectin chains.

  2. Laser annealing of silicon surface defects for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Sun, Zeming; Gupta, Mool C.

    2016-10-01

    High power lasers are increasingly used for low cost fabrication of solar cell devices. High power laser processes generate crystal defects, which lower the cell efficiency. This study examines the effect of low power laser annealing for the removal of high power laser induced surface defects. The laser annealing behavior is demonstrated by the significant decrease of photoluminescence generated from dislocation-induced defects and the increase of band-to-band emission. This annealing effect is further confirmed by the X-ray diffraction peak reversal. The dislocation density is quantified by observing etch pits under the scanning electron microscope (SEM). For as-melted samples, the dislocation density is decreased to as low as 1.01 × 106 cm- 2 after laser annealing, resulting in an excellent surface carrier lifetime of 920 μs that is comparable to the value of 1240 μs for the silicon starting wafer. For severely defective samples, the dislocation density is decreased by 4 times and the surface carrier lifetime is increased by 5 times after laser annealing.

  3. Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.

    PubMed

    Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Song, Hui; Kim, Tae Heon; Choi, Boran; Jung, Gun Young

    2016-06-01

    We demonstrated the effect of active layer (channel) thickness and annealing temperature on the electrical performances of Ga2O3-In2O3-ZnO (GIZO) thin film transistor (TFT) having nanoscale channel width (W/L: 500 nm/100 μm). We found that the electron carrier concentration of the channel was decreased significantly with increasing the annealing temperature (100 degrees C to 300 degrees C). Accordingly, the threshold voltage (V(T)) was shifted towards positive voltage (-12.2 V to 10.8 V). In case of channel thickness, the V(T) was shifted towards negative voltage with increasing the channel thickness. The device with channel thickness of 90 nm annealed at 200 degrees C revealed the best device performances in terms of mobility (10.86 cm2/Vs) and V(T) (0.8 V). The effect of channel length was also studied, in which the channel width, thickness and annealing temperature were kept constant such as 500 nm, 90 nm and 200 degrees C, respectively. The channel length influenced the on-current level significantly with small variation of V(T), resulting in lower value of on/off current ratio with increasing the channel length. The device with channel length of 0.5 μm showed enhanced on/off current ratio of 10(6) with minimum V(T) of 0.26 V. PMID:27427719

  4. Real-time optical studies in the UV range of the annealing of zirconium-oxide thin films in vacuum

    NASA Astrophysics Data System (ADS)

    Cheon, Hyuknyeong; An, Ilsin

    2015-01-01

    A multichannel spectroscopic ellipsometer is developed for real-time studies of thin films in a vacuum in the UV range. This system is mounted on a vacuum chamber to study the crystallization process of zirconium-oxide (ZrO2) thin film. The optical spectra of ZrO2 thin film are collected during the elevation of temperature. From the trend in the spectrum, we find that a threshold temperature for crystallization exists. Moreover, the crystallization occurs gradually over a certain range of temperatures between the threshold temperature and a critical temperature for full crystallization. The evolution of the dielectric function shows the development of critical peaks around 6.2 eV and 7.3 eV along with a shift of the absorption edge. To the best of our knowledge, this is the first in-situ study performed by using real-time vacuum UV spectroscopic ellipsometry, and we describe the system in detail.

  5. Effect of annealing and heat moisture conditioning on the physicochemical characteristics of Bambarra groundnut (Voandzeia subterranea) starch.

    PubMed

    Adebowale, K O; Lawal, O S

    2002-10-01

    Isolated starch of Bambarra groundnut (Voandzeia subterranean) was subjected to hydrothermal modifications through annealing and heat moisture conditioning. Both annealing and heat moisture conditioning reduced the swelling power and solubility of the starch. Water binding capacity reduced after annealing heat moisture conditioning at 18% moisture level (HMB18) and heat moisture conditioning at 21% moisture level (HMB21). Both heat moisture conditioning at 24% moisture level (HMB24) and heat moisture conditioning at 27% moisture level (HMB27) increased the water binding capacity. Hydrothermal modifications reduced the oil absorption capacity of the raw starch. Annealing and heat moisture conditioning reduced the peak viscosity (Pv), viscosity at 95 degrees C (Hv) and viscosity at 95 degrees C after 30 min holding (Hv30). However, viscosity increased on cooling down to 50 degrees C after annealing. Annealing and heat moisture treatments as revealed by scanning electron micrograph and light micrograph did not alter the shape and size of the raw starch. The results indicate a rearrangement within the starch granule following hydrothermal treatments.

  6. The effects of annealing on the microstructure and mechanical properties of Fe28Ni18Mn33Al21

    DOE PAGES

    Meng, Fanling; Qiu, Jingwen; Baker, Ian; Bei, Hongbin

    2015-08-20

    In this paper, As-cast Fe28Ni18Mn33Al21, which consists of aligned, 50 nm, (Ni, Al)-rich B2, and (Fe, Mn)-rich f.c.c. phases, was annealed at a variety of temperatures up to 1423 K and the microstructure and mechanical properties were examined. It was shown that the as-cast microstructure arises from a eutectoid transformation at ~1300 K. Annealing at temperatures ≤1073 K produces β-Mn-structured precipitates and hardness values up to 816 HV, while annealing at temperatures >1073 K leads to dramatic coarsening of the two-phase B2/f.c.c. microstructure (up to 5.5 µm after 50 h at 1273 K), but does not lead to β-Mn precipitation.more » Interestingly, annealing at temperatures >1073 K delays the onset of β-Mn precipitation during subsequent anneals at lower temperatures. Coarsening the B2/f.c.c. lamellar structure by annealing at higher temperatures softens it and leads to increases in ductility from fracture before yield to ~8 % elongation. Finally, the presence of β-Mn precipitates makes the very fine, brittle B2/f.c.c. microstructures even more brittle, but significant ductility (8.4 % elongation) is possible even with β-Mn precipitates present if the B2/f.c.c. matrix is coarse and, hence, more ductile.« less

  7. STIS CCD Hot Pixel Annealing Cycle 11

    NASA Astrophysics Data System (ADS)

    Proffitt, Charles

    2002-07-01

    The effectiveness of the CCD hot pixel annealing process is assessed by measuring the dark current behavior before and after annealing and by searching for any window contamination effects. In addition CTE performance is examined by looking for traps in a low signal level flat. Follows on from proposal 8906.

  8. STIS CCD Hot Pixel Annealing Cycle 12

    NASA Astrophysics Data System (ADS)

    Maiz Apellaniz, Jesus

    2003-07-01

    The effectiveness of the CCD hot pixel annealing process is assessed by measuring the dark current behavior before and after annealing and by searching for any window contamination effects. In addition CTE performance is examined by looking for traps in a low signal level flat. Follows on from proposal 9612.

  9. The combined effect of thermal annealing of MgO substrate and Ca substitution on the surface resistance of YBa2Cu3Oz thin films

    NASA Astrophysics Data System (ADS)

    Murugesan, M.; Obara, H.; Yamasaki, H.

    2005-07-01

    Single-layer Y1-xCaxBa2Cu3Oz (YCBCO) thin films (x =0.00, 0.02, 0.05, and 0.10) grown on annealed as well as unannealed MgO substrates have been systematically investigated for their carrier concentration, critical current density Jc, and microwave surface resistance Rs. For x ⩽0.05, the grain growth follows a three-dimensional-spiral growth mechanism, while for x =0.10 we observed a mainly two-dimensional-like growth of grains. The results of Hall data reveal that the x =0.05 film is overdoped while films with x =0.02 and 0.10 are underdoped with respect to the x =0.00 film. However, the Hall mobility μH is highly enhanced for the x =0.02 film. Thermal annealing of MgO substrates prior to film deposition results to an improvement in the overall superconducting properties of the film such as suppression of normal-state resistivity, enhancement of Jc, and minimization of Rs both for pure as well as Ca-substituted films. Annealing of MgO substrates enhances the Jc value to a magnitude (i) nearly doubled for x =0.00 films and (ii) more than an order for x =0.02 films. Also it leads to a minimization of the Rs value to (i) more than half and (ii) nearly an order of magnitude higher, respectively, for x =0.00 and x =0.02 films. Furthermore, for the x =0.02 film, below 60K, we realized an enhanced Jc value in self- as well as in large-applied fields. For other than the Ca-2% substituted films, a suppression of Jc with a strong field dependency has been noticed. Furthermore, the Rs value of the x =0.02 film (0.1mΩ at 20K, 21.9GHz) was three times lower compared to that of the x =0.00 film (0.35mΩ at 20K, 21.9GHz). At 20K and 21.9GHz, the Rs value for the x =0.05 film is comparable to that of the x =0.00 film, whereas for the x =0.10 film it is twice that of x =0.00. The low normal-state resistivity, enhanced mobility, high Jc, and the minimized Rs observed for x =0.02 films firmly support the possible improvement of superconducting order parameters near the grain

  10. Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study

    PubMed Central

    2013-01-01

    We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix. PMID:24314071

  11. The effects of fabrication and annealing on the structure and hydrogen permeation of Pd-Au binary alloy membranes

    SciTech Connect

    Gade, Sabina K; Payzant, E Andrew; Park, Helen J; Thoen, Paul M; Way, J. Douglas

    2009-01-01

    The addition of gold to palladium membranes produces many desirable effects for hydrogen purification, including improved tolerance of sulfur compounds, reduction in hydride phase formation, and, for certain compositions, improved hydrogen permeability. The focus of this work is to determine if sequential plating can be used to produce self-supported alloy membranes with equivalent properties to membranes produced by conventional metallurgical techniques such as cold-working. Sequential electroplating and electroless plating were used to produce freestanding planar Pd-Au membranes with Au contents ranging from 0 to 20 wt%, consisting of Au layers on both sides of a pure Pd core. Membranes were characterized by single-gas permeation measurements, scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM/EDS), and high temperature, controlled-atmosphere XRD (HTXRD). Sequentially plated foils tested without any prior annealing had significantly lower H2 permeabilities than either measured or literature values for homogeneous foils of equivalent composition. This effect appears to be due to the formation of stable gold-enriched surface layers. Pretreatment of membranes to 1023 K created membranes with hydrogen permeabilities equivalent to literature values, despite the fact that trace amounts of surface gold remained detectable with XRD.

  12. Effect of neutron irradiation and postradiation annealing on the microstructure and properties of an Al-Mg-Si alloy

    NASA Astrophysics Data System (ADS)

    Maksimkin, O. P.; Tsai, K. V.; Rofman, O. V.; Sil'nyagina, N. S.

    2016-09-01

    The effect of long-term neutron irradiation and postradiation thermal-induced aging on the microstructure and mechanical properties of an aluminum-based reactor Al-Mg-Si alloy grade SAV-1 has been studied. The material under study is the shell of an automatic fine-control rod used to control the reactivity of the core of a VVR-K research reactor. Successive 1-h annealings of specimens of the SAV-1 alloy irradiated to doses of 0.001 and 5 dpa in the temperature range of 100-550°C have been carried out. The evolution of the fine structure of the material and changes in its mechanical characteristics have been studied. The phenomenon of the acceleration of the aging of the SAV-1 alloy under the effect of a high neutron fluence at an irradiation temperature of 80°C has been observed, which involves the formation of numerous lineage (stitch) Guinier-Preston zones in the alloy. It has been shown that the strength characteristics of the SAV-1 alloy depend significantly on the degree of its radiation- and thermal-induced aging.

  13. Energy dependence of defects in a-Si:H solar cells during degradation and annealing processes

    SciTech Connect

    Caputo, D.; Lemmi, F.; Palma, F.

    1997-07-01

    In this work the authors report on the effect of current-induced degradation and annealing on p-i-n amorphous silicon solar cells. Current-voltage curves and capacitance measurements under forward bias have been used to monitor the current-induced changes as a function of time. They found that the recovery rate increases with the annealing current, while the stabilized value of efficiency decreases. Comparison of short circuit current and capacitance evolution suggests that defect kinetics in the electronic gap occurs in a different way during degradation and annealing. This behavior can be modeled assuming a faster annealing of defects closest to the extended band and a slower annealing of mid-gap defects.

  14. Linear response theory for annealing of radiation damage in semiconductor devices

    NASA Technical Reports Server (NTRS)

    Litovchenko, Vitaly

    1988-01-01

    A theoretical study of the radiation/annealing response of MOS ICs is described. Although many experiments have been performed in this field, no comprehensive theory dealing with radiation/annealing response has been proposed. Many attempts have been made to apply linear response theory, but no theoretical foundation has been presented. The linear response theory outlined here is capable of describing a broad area of radiation/annealing response phenomena in MOS ICs, in particular, both simultaneous irradiation and annealing, as well as short- and long-term annealing, including the case when annealing is nearing completion. For the first time, a simple procedure is devised to determine the response function from experimental radiation/annealing data. In addition, this procedure enables us to study the effect of variable temperature and dose rate, effects which are of interest in spaceflight. In the past, the shift in threshold potential due to radiation/annealing has usually been assumed to depend on one variable: the time lapse between an impulse dose and the time of observation. While such a suggestion of uniformity in time is certainly true for a broad range of radiation annealing phenomena, it may not hold for some ranges of the variables of interest (temperature, dose rate, etc.). A response function is projected which is dependent on two variables: the time of observation and the time of the impulse dose. This dependence on two variables allows us to extend the theory to the treatment of a variable dose rate. Finally, the linear theory is generalized to the case in which the response is nonlinear with impulse dose, but is proportional to some impulse function of dose. A method to determine both the impulse and response functions is presented.

  15. Luminescence properties of europium ions-doped yttrium silicate (Y2SiO5:Eu3+) nanocrystalline phosphors: effect of Eu3+ ion concentration and thermal annealing.

    PubMed

    Ko, Yeong Hwan; Lee, Soo Hyun; Yu, Jae Su

    2013-05-01

    The trivalent europium ions-doped yttrium silicate (Y2SiO5:Eu3+) nanocrystalline phosphors were synthesized via a sol-gel method, followed by post thermal annealing. The effects of thermal annealing temperature and doping concentration on the structural and luminescent properties of Y2SiO5:Eu3+ nanocrystalline phosphors were systematically investigated by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and photoluminescence measurements. The nanocrystalline phosphors with a high crystallinity were obtained at an annealing temperature of 1300 degrees C. The luminescent spectra were affected strongly by the Eu3+ ion concentration and annealing temperature. The Eu3+ ion concentration was optimized at 5 mol%, exhibiting excellent red emission (-612 nm) corresponding to the 5D0 --> 7F2 transition of Eu3+ ions at the excitation wavelengths of 262 and 396 nm. For the optimized Y2SiO5:Eu3+ nanocrystalline phosphors, the lifetimes were also estimated from the decay curves under the ultraviolet excitations.

  16. Post annealing effects on structural, optical and electrical properties of CuSbS2 thin films fabricated by combinatorial thermal evaporation technique

    NASA Astrophysics Data System (ADS)

    Hussain, Arshad; Ahmed, R.; Ali, N.; Butt, Faheem K.; Shaari, A.; Shamsuri, W. N. Wan; Khenata, R.; Prakash, Deo; Verma, K. D.

    2016-01-01

    Copper antimony sulfide (CuSbS2) thin films were fabricated by combinatorial thermal evaporation technique on well cleaned glass substrates. The deposited thin films were annealed in argon gas atmosphere for 1 h at temperature range of 150-350 °C. The effect of annealing temperature on structural, morphological, optical and electrical properties was studied using the different characterization techniques. The XRD analysis confirmed the crystallinity of the obtained samples with CuSbS2 phase in chalcostibite structure. Optical properties of the deposited samples showed good response in the visible and NIR region, envisaging the potential of CuSbS2 as an efficient solar cell material. The optical band gap of CuSbS2 thin films was measured to be 1.5 eV. A decrease (12.5-1.43 KΩ-cm) was observed for the resistivity of samples with the increase in annealing temperature. The plot of sheet resistance with annealing temperature confirmed the uniformity of samples. These thin films were found as a sustainable substitute material for the absorber layer in conventional thin film solar cell system, because of the abundance and low cost of its constituent elements. This study opens new avenue of research for scalable synthesis of CuSbS2 thin films for solar cell and photovoltaic applications.

  17. Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude-Lorentz model

    NASA Astrophysics Data System (ADS)

    García-Méndez, Manuel; Bedoya-Calle, Álvaro; Segura, Ricardo Rangel; Coello, Víctor

    2015-09-01

    Zinc oxide films were deposited on glass substrates by RF reactive magnetron sputtering and post-annealed in vacuum at 100, 200, and 300 ºC. Structural and optical properties of films were obtained using X-ray diffraction and UV-visible spectroscopy. Optical parameters were extracted from transmittance curves using the single-oscillator Drude-Lorentz model. The evolution of the optical and structural properties of films with the annealing process was investigated. The films crystallized into the hexagonal würzite lattice structure, with preferential growth along the c-axis [0002]. The results indicate that the crystalline quality of films improved with annealing, whereas transparency was reduced from 90 to 80 % at 300 ºC. With post-annealing, the absorption edge shifted to the red, while the optical band gap decreased from to eV because of the Burstein-Moss effect. Calculated values of plasma frequency, fall within the IR range and decrease with temperature, from rad/s () to rad/s ().

  18. Effect of Mg diffusion on photoluminescence spectra of MgZnO/ZnO bi-layers annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Das, Amit K.; Misra, P.; Ajimsha, R. S.; Bose, A.; Joshi, S. C.; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kukreja, L. M.

    2013-11-01

    MgZnO/ZnO bilayers (Mg concentration of ˜30%) have been grown and subsequently annealed at different temperatures in the range of 600-900 °C with the specific interest of studying the effect of inter-diffusion of Mg on the photoluminescence (PL) properties of the bilayers. The influence of Mg diffusion and material homogenization is evaluated through absorption, PL, and secondary ion mass spectrometry (SIMS) measurements. No appreciable change in the spectral positions is seen either in PL or absorption up to an annealing temperature of 700 °C, which is also supported by SIMS. However at higher annealing temperatures, diffusion of Mg into the ZnO layer is clearly evident in SIMS profile, which results in the red-shift (blue-shift) of spectral positions of MgZnO (ZnO) layer, respectively. Finally, for the sample annealed at 900 °C, the two layers are completely merged providing a single peak at ˜3.60 eV in PL/absorption corresponding to a completely homogenized MgZnO layer. Spectroscopic results are corroborated by the numerical simulations based on a simple theoretical model, which correlates the observed PL spectra of the heterostructures with the experimental Mg diffusion profiles across the heterointerface, as measured by SIMS.

  19. Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

    SciTech Connect

    Shaikh, Shaheed U.; Desale, Dipalee J.; Siddiqui, Farha Y.; Ghosh, Arindam; Birajadar, Ravikiran B.; Ghule, Anil V.; Sharma, Ramphal

    2012-11-15

    Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.

  20. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors

    NASA Astrophysics Data System (ADS)

    Tian, Xue-Yan; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Yuan, Guang-Cai; Xu, Xu-Rong

    2009-08-01

    This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs). The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5 wt% to 2 wt% are prepared. The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands. It finds that the field-effect mobility of RR-P3HT FET with 2 wt% can reach 5.78 × 10-3 cm2/Vs which is higher by a factor of 13 than that with 0.5 wt%. Further, an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs. The field-effect mobility of RR-P3HT FETs increases drastically to 0.09 cm2/Vs by thermal annealing at 150 °C, and the value of on/off current ratio can reach 104.

  1. Effect of RF power and annealing on chemical bonding and morphology of a-CN{sub x} thin films as humidity sensor

    SciTech Connect

    Aziz, N. F. H; Hussain, N. S. Mohamed; Awang, R.; Ritikos, R.; Kamal, S. A. A.

    2013-11-27

    Amorphous carbon nitride (a-CN{sub x}) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique. A set of a-CN{sub x} thin films were prepared using pure methane (CH{sub 4}) gas diluted with nitrogen (N{sub 2}) gas. The rf power was varied at 50, 60, 70, 80, 90 and 100 W. These films were then annealed at 400 °C in a quartz tube furnace in argon (Ar) gas. The effects of rf power and thermal annealing on the chemical bonding and morphology of these samples were studied. Surface profilometer was used to measure film thickness. Fourier transform infra-red spectroscopy (FTIR) and Field emission scanning electron microscopy (FESEM) measurements were used to determine their chemical bonding and morphology respectively. The deposition rate of the films increased constantly with increasing rf power up to 80W, before decreasing with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks included C-N, C=N, C=C and C≡N triple bond. C=N and C≡N bonds decreased with increased C-N bonds after thermal annealing process. The FESEM images showed that the structure is porous for as-deposited and covered by granule-like grain structure after thermal annealing process was done. The resistance of the a-CN{sub x} thin film changed from 23.765 kΩ to 5.845 kΩ in the relative humidity range of 5 to 92 % and the film shows a good response and repeatability as a humidity sensing materials. This work showed that rf power and thermal annealing has significant effects on the chemical bonding and surface morphology of the a-CN{sub x} films and but yield films which are potential candidate as humidity sensor device.

  2. Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures

    SciTech Connect

    Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C.

    2007-09-01

    Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n{sup +}-GaAs substrates, capped between 0.4 {mu}m thick n-type GaAs layers with electron concentration of 1x10{sup 16} cm{sup -3}. The effect of rapid thermal annealing at 700 deg. C for 60 s on the noise properties of the structure has been investigated using Au/n-GaAs Schottky diodes as test devices. In the reference sample without containing QDs, the noise spectra show a generation-recombination (g-r) noise behavior due to a discrete energy level located about 0.51 eV below the conduction band edge. This trap is ascribed to the M4 (or EL3) trap in GaAs MBE layers, related to a chemical impurity-native defect complex. In the structure with embedded QDs, the observed g-r noise spectra are due to a midgap trap level ascribed to the EL2 trap in GaAs, which is related to the InAs QDs dissolution due to the thermal treatment.

  3. Annealing-induced alloy formation in Pd/Fe bilayers on Si(1 1 1) for hydrogen sensing

    NASA Astrophysics Data System (ADS)

    Mudinepalli, Venkata Ramana; Tsai, Cheng-Jui; Chuang, Ying-Chin; Chang, Po-Chun; Plusnin, N.; Lin, Wen-Chin

    2016-03-01

    The bilayers of Pd and Fe with different thickness and relative positions were grown on Si(1 1 1)-7 × 7 surface at room temperature. For the investigation of the thermal annealing induced inter-diffusion and the corresponding magnetic behavior, Auger electron spectroscopy (AES) measurement was carried out after various annealing processes, including the variation of annealing duration and temperature. With the annealing temperature of 300-500 K, the Pd/Fe bilayers were stable. Slight Si segregated into the thin film at around 700 K. Above 700 K, more serious Si segregation occurred and most of the Pd/Fe bilayer was mixed with Si, forming a silicide layer. 700-800 K annealing also induced change of Pd/Fe AES ratio, indicating the inter-diffusion between Pd and Fe layers. To overcome the unavoidable silicide formation induced magnetic dead layer, a relative thick Fe film of 20 ML capped with 1.5 ML Pd was chosen for the investigation of magnetism. The magnetic coercivity (Hc) increased by 2-3 times with the annealing temperature up to 740 K. Obvious hydrogenation effect was observed in 710 K-annealed sample; the in-plane Hc increased by more than 10% when the hydrogen pressure was above 200 mbar. After further annealing at 740-800 K, the hydrogenation effect on Hc became nearly unobservable. The annealing induced Pd-rich magnetic interface is supposed to dominate the hydrogenation effect on magnetism.

  4. Microstructure evolution during helium irradiation and post-irradiation annealing in a nanostructured reduced activation steel

    NASA Astrophysics Data System (ADS)

    Liu, W. B.; Ji, Y. Z.; Tan, P. K.; Zhang, C.; He, C. H.; Yang, Z. G.

    2016-10-01

    Severe plastic deformation, intense single-beam He-ion irradiation and post-irradiation annealing were performed on a nanostructured reduced activation ferritic/martensitic (RAFM) steel to investigate the effect of grain boundaries (GBs) on its microstructure evolution during these processes. A surface layer with a depth-dependent nanocrystalline (NC) microstructure was prepared in the RAFM steel using surface mechanical attrition treatment (SMAT). Microstructure evolution after helium (He) irradiation (24.8 dpa) at room temperature and after post-irradiation annealing was investigated using Transmission Electron Microscopy (TEM). Experimental observation shows that GBs play an important role during both the irradiation and the post-irradiation annealing process. He bubbles are preferentially trapped at GBs/interfaces during irradiation and cavities with large sizes are also preferentially trapped at GBs/interfaces during post-irradiation annealing, but void denuded zones (VDZs) near GBs could not be unambiguously observed. Compared with cavities at GBs and within larger grains, cavities with smaller size and higher density are found in smaller grains. The average size of cavities increases rapidly with the increase of time during post-irradiation annealing at 823 K. Cavities with a large size are observed just after annealing for 5 min, although many of the cavities with small sizes also exist after annealing for 240 min. The potential mechanism of cavity growth behavior during post-irradiation annealing is also discussed.

  5. Effect of multiple strain-anneal cycles on the 1000 C creep behaviour of gamma/gamma prime-alpha

    NASA Technical Reports Server (NTRS)

    Whittenberger, J. D.; Buzek, B. C.; Wirth, G.

    1986-01-01

    Various multiple strain-anneal cycles (1000 C) were imposed on specimens of the directionally solidified eutectic (DSE) alloy gamma/gamma prime-alpha to identify thermomechanical processing methods (TMP) which would improve the creep behavior. Specimens of the Ni-32.3Mo-6.3Al wt pct alloy were grown with a modified Bridgeman technique. Some of the cylindrical specimens were alternately heat-treated at 900 C, then strained, or heat-treated only, while other specimens were annealed at 900 C after swaging and then worked at ambient temperature. The specimens were all examined microstructurally using transmission electron microscopy, some before and after being exposed to constant-load compression tests at 1000 C. The creep strain increased for all TMP specimens for strain rates of at least 2 millionths per sec. Strain rates of about 2 ten millionths per sec were only improved with strain annealing with 13 percent work at ambient temperature. A slight improvement, compared to as-grown materials, was observed in the 1000 C creep behavior of materials annealed at 900 C. Strain-annealing was found to introduce three-dimensional dislocation networks into the gamma-prime matrix.

  6. Effect of annealing on the nanoscratch behavior of multilayer Si 0.8Ge 0.2/Si films

    NASA Astrophysics Data System (ADS)

    Lian, Derming

    2010-11-01

    In this study, we examined the nanoscratch behavior of annealed multilayered silicon-germanium (SiGe) films comprising alternating sublayers (Si) deposited using an ultrahigh-vacuum chemical vapor deposition (UHV/CVD) system. Annealing consisted of ex situ thermal treatment in a furnace system. We used a nanoscratch technique to investigate the nanotribological behavior of the SiGe films and atomic force microscopy (AFM) to observe deformation phenomena. Our AFM morphological studies of the SiGe films revealed that pile-up phenomena occurred on both sides of each scratch. The scratched surfaces of the SiGe films that had been subjected to various annealing conditions exhibited significantly different features, it is conjectured that cracking dominates in the case of SiGe films while ploughing dominates during the scratching process. We obtained higher coefficients of friction ( μ) when the ramped force was set at 6000 μN, rather than 2000 μN, suggesting that annealing of SiGe films leads to higher shear resistance; annealing treatment not only produced misfit dislocations in the form of a significantly wavy sliding surface but also promoted scratching resistance.

  7. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Hu, Yu-Min; Li, Sih-Sian; Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung

    2015-05-01

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu2+ state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu1+ ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.

  8. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    SciTech Connect

    Hu, Yu-Min Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung; Li, Sih-Sian

    2015-05-07

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu{sup 2+} state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu{sup 1+} ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.

  9. The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect

    SciTech Connect

    Lin, Sheng-Chang; Yeh, Chien-Jui; Leou, Keh-Chyang; Kurian, Joji; Lin, I.-Nan; Dong, Chung-Li; Niu, Huan

    2014-11-14

    The microstructural evolution of UNCD films which are P-ion implanted and annealed at 600 °C (or 800 °C) is systematically investigated. The difference of interaction that the UNCD content undergoes along the trajectory of the incident P-ions is reflected in the alteration of the granular structure. In regions where the P-ions reside, the “interacting zone,” which is found at about 300 nm beneath the surface of the films, coalescence of diamond grains occurs inducing nano-graphitic clusters. The annealing at 600 °C (or 800 °C) heals the defects and, in some cases, forms interconnected graphitic filaments that result in the decrease in surface resistance. However, the annealing at 600 °C (800 °C) induces marked UNCD-to-Si layers interaction. This interaction due to the annealing processes hinders the electron transport across the interface and degrades the electron field emission properties of the UNCD films. These microstructural evolution processes very well account for the phenomenon elaborating that, in spite of enhanced conductivity of the UNCD films along the film's surface due to the P-ion implantation and annealing processes, the electron field emission properties for these UNCD films do not improve.

  10. Coupled annealing temperature and layer thickness effect on strengthening mechanisms of Ti/Ni multilayer thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Wang, Junlan

    2016-03-01

    A systematic study was performed on mechanical and microstructural properties of Ti/Ni multilayers with layer thickness from 200 nm to 6 nm and annealing temperature from room temperature to 500 °C. Based on the observed hardness evolution, a coupled layer-thickness and annealing-temperature dependent strengthening mechanism map is proposed. For as-deposited films, the deformation behavior follows the traditional trend of dislocation mediated strengthening to grain boundary mediated softening with decreasing layer thickness. For annealed films, grain boundary relaxation is considered to be the initial strengthening mechanism with higher activation temperature required for thicker layers. Under further annealing, solid solution hardening, intermetallic precipitation hardening, and fully intermixed alloy structure continue to strengthen the thin layered films, while recrystallization and grain-growth lead to the eventual softening of thick layered films. For the films with intermediate layer thickness, a strong orientation dependent hardness behavior is exhibited under high temperature annealing due to mechanism switch from grain growth softening to intermetallic precipitation hardening when changing the loading orientation from perpendicular to parallel to the layer interfaces.

  11. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    SciTech Connect

    Iwamoto, Naoya Azarov, Alexander; Svensson, Bengt G.; Ohshima, Takeshi; Moe, Anne Marie M.

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  12. The effects of annealing on the structural, optical, and vibrational properties of lattice-matched GaAsSbN /GaAs grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bharatan, S.; Iyer, S.; Nunna, K.; Collis, W. J.; Matney, K.; Reppert, J.; Rao, A. M.; Kent, P. R. C.

    2007-07-01

    The structural, optical, and vibrational properties of a GaAsSbN epilayer lattice matched to GaAs with a band gap of 1eV have been investigated using a variety of characterization techniques. These layers have potential applications in GaAs based tandem solar cells that utilize the near infrared region of the solar spectrum. The epilayers were grown in an elemental solid source molecular beam epitaxy system with a rf plasma nitrogen source. The Sb and N compositions of the nearly lattice-matched layers are 6.8% and 2.6%, respectively, as determined by high resolution x-ray diffraction and secondary ion mass spectroscopy (SIMS) analysis. The high crystalline quality of the layers is attested by the presence of well resolved Pendellosung fringes on a triple axis (004) x-ray scan and dynamical truncation rods observed on the corresponding (004) reciprocal space map. The effects of in situ annealing in As ambient and ex situ annealing in N ambient on the low temperature photoluminescence (PL) characteristics are discussed. Ex situ (in situ) annealed samples display an 8K PL peak energy of 1eV with a full width at half maximum of 18meV (26meV). Raman spectral analysis, the temperature dependence of the PL peak energy, and SIMS profiles indicate that outdiffusions of N and As are suppressed in the in situ annealed samples and improvement in Ga-N bonding is observed, leading to higher PL intensities in these samples. In addition, indirect evidence of atomic scale ordering has been observed. The stability of these structures appears to be dependent on the annealing conditions.

  13. The effects of annealing on the structural, optical, and vibrational properties of lattice-matched GaAsSbN/GaAs grown by molecular beam epitaxy

    SciTech Connect

    Bharatan, S.; Iyer, Prof Shanthi; Nunna, K.; Collis, W J; Matney, K.; Reppert, J.; Rao, A. M.; Kent, Paul R

    2007-01-01

    The structural, optical, and vibrational properties of a GaAsSbN epilayer lattice matched to GaAs with a band gap of 1 eV have been investigated using a variety of characterization techniques. These layers have potential applications in GaAs based tandem solar cells that utilize the near infrared region of the solar spectrum. The epilayers were grown in an elemental solid source molecular beam epitaxy system with a rf plasma nitrogen source. The Sb and N compositions of the nearly lattice-matched layers are 6.8% and 2.6%, respectively, as determined by high resolution x-ray diffraction and secondary ion mass spectroscopy (SIMS) analysis. The high crystalline quality of the layers is attested by the presence of well resolved Pendellosung fringes on a triple axis (004) x-ray scan and dynamical truncation rods observed on the corresponding (004) reciprocal space map. The effects of in situ annealing in As ambient and ex situ annealing in N ambient on the low temperature photoluminescence (PL) characteristics are discussed. Ex situ (in situ) annealed samples display an 8 K PL peak energy of 1 eV with a full width at half maximum of 18 meV (26 meV). Raman spectral analysis, the temperature dependence of the PL peak energy, and SIMS profiles indicate that outdiffusions of N and As are suppressed in the in situ annealed samples and improvement in Ga-N bonding is observed, leading to higher PL intensities in these samples. In addition, indirect evidence of atomic scale ordering has been observed. The stability of these structures appears to be dependent on the annealing conditions.

  14. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    NASA Astrophysics Data System (ADS)

    Iwamoto, Naoya; Azarov, Alexander; Ohshima, Takeshi; Moe, Anne Marie M.; Svensson, Bengt G.

    2015-07-01

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 1015 cm-3 range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ˜1014 cm-3). Schottky barrier diodes fabricated on substrates annealed at 1400-1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  15. Effect of post-deposition annealing on the growth of Cu2ZnSnSe4 thin films for a solar cell absorber layer

    NASA Astrophysics Data System (ADS)

    Babu, G. Suresh; Kishore Kumar, Y. B.; Uday Bhaskar, P.; Sundara Raja, V.

    2008-08-01

    The effect of substrate temperature and post-deposition annealing on the growth and properties of Cu2ZnSnSe4 thin films, a potential candidate for a solar cell absorber layer, is investigated. The substrate temperature (Ts) is chosen to be in the range 523-673 K and the annealing temperature (Tpa) is kept at 723 K. Powder x-ray diffraction (XRD) patterns of as-deposited films revealed that the films deposited at Ts = 523 K and 573 K contain Cu2-xSe as a secondary phase. Single phase, polycrystalline Cu2ZnSnSe4 films are obtained at Ts = 623 K and films deposited at Ts = 673 K have ZnSe as a secondary phase along with Cu2ZnSnSe4. Direct band gap of as-deposited CZTSe films is found to lie between 1.40 eV and 1.65 eV depending on Ts. XRD patterns of post-deposition annealed films revealed that the films deposited at Ts = 523-623 K are single phase CZTSe and films deposited at Ts = 673 K still contain ZnSe secondary phase. CZTSe films are found to exhibit kesterite structure with the lattice parameters a = 0.568 nm and c = 1.136 nm. Optical absorption studies of post-deposition annealed films show that there is a slight increase in the band gap on annealing, due to decrease in the Cu content. Electrical resistivity of the films is found to lie in the range 0.02-2.6 Ω cm depending on Ts.

  16. Modelling of organic field effect transistors with inkjet printed poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) electrodes: study of the annealing effects.

    PubMed

    Grimaldi, Immacolata Angelica; Del Mauro, Anna de Girolamo; Loffredo, Fausta; Morvillo, Pasquale; Villani, Fulvia

    2013-07-01

    In the present work, the transport mechanism of organic transistors with bottom-gate/top-contact structure, manufactured by employing traditional and inkjet printing techniques, was studied. Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) conductive polymer was used for realizing printed source, drain and gate electrodes. The influence of the printing parameters (substrate temperature, drop overlapping degree, drop emission frequency) on the uniformity and morphology of the PEDOT:PSS layer was investigated. Polymethyl methacrylate (PMMA) was used as organic dielectric and pentacene, deposited by thermal evaporation, was employed as p-type semiconductor. Organic field effect transistors (OFETs) were fabricated and electrically characterized before and after the thermal annealing process at 120 degrees C for 1 h in nitrogen ambient. The effect of the annealing on the performances of the OFETs was investigated by modelling the measured electrical characteristics and analyzing them in terms of mobility, characteristic temperature and energy distribution of the density of localized states (DOS). In addition, the OFET working under electrical stress in ambient conditions was observed and discussed. PMID:23901549

  17. Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films

    SciTech Connect

    Li, Ling; Fan, Lina; Li, Yanhuai; Song, Zhongxiao; Ma, Fei E-mail: chlliu@mail.xjtu.edu.cn; Liu, Chunliang E-mail: chlliu@mail.xjtu.edu.cn

    2014-03-15

    Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 °C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.

  18. Effect of thermal annealing on structure and optical band gap of amorphous Se72Te25Sb3 thin films

    NASA Astrophysics Data System (ADS)

    Dwivedi, D. K.; Pathak, H. P.; Kumar, Vipin; Shukla, Nitesh

    2014-04-01

    Thin films of a-Se72Te25Sb3 were prepared by vacuum evaporation technique in a base pressure of 10-6 Torr on to well cleaned glass substrate. a-Se72Te25Sb3 thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical band gap of as prepared and annealed films as a function of photon energy in the wavelength range 400-1100 nm has been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.

  19. Effect of post-deposition annealing on the structural and electrical properties of RF sputtered hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Das, K. C.; Ghosh, S. P.; Tripathy, N.; Bose, G.; Kar, J. P.

    2016-02-01

    Hafnium oxide films were deposited on silicon substrates by RF sputtering at room temperature. Post-deposition rapid thermal annealing of the sputtered HfO2 films was carried out in the temperature range of 400°C to 800°C in oxygen ambient. The structural properties ware studied by X-ray diffraction (XRD), where the enhancement in the crystallinity of HfO2 (1¯11) orientation was observed. The Capacitance —Voltage (C-V) and Current density —Voltage (J-V) characteristics of the annealed dielectric film were investigated employing Al/HfO2/Si Metal Oxide Semiconductor (MOS) capacitor structure. The flatband voltage (V fb ) and oxide charge density (Q ox ) were extracted from the high frequency (1 MHz) C-V curve. Leakage current was found to be minimum for the annealing temperature of 600°C.

  20. Effects of vacuum annealing treatment on microstructures and residual stress of AlSi10Mg parts produced by selective laser melting process

    NASA Astrophysics Data System (ADS)

    Chen, Tian; Wang, Linzhi; Tan, Sheng

    2016-07-01

    Selective laser melting (SLM)-fabricated AlSi10Mg parts were heat-treated under vacuum to eliminate the residual stress. Microstructure evolutions and tensile properties of the SLM-fabricated parts before and after vacuum annealing treatment were studied. The results show that the crystalline structure of SLM-fabricated AlSi10Mg part was not modified after the vacuum annealing treatment. Additionally, the grain refinement had occurred after the vacuum annealing treatment. Moreover, with increasing of the vacuum annealing time, the second phase increased and transformed to spheroidization and coarsening. The SLM-produced parts after vacuum annealing at 300∘C for 2 h had the maximum ultimate tensile strength (UTS), yield strength (YS) and elongation, while the elastic modulus decreased significantly. In addition, the tensile residual stress was found in the as-fabricated AlSi10Mg samples by the microindentation method.

  1. Investigation of the impact of annealing on global molecular mobility in glasses: optimization for stabilization of amorphous pharmaceuticals.

    PubMed

    Luthra, Suman A; Hodge, Ian M; Pikal, Michael J

    2008-09-01

    The purpose of this research was to investigate the effect of annealing on the molecular mobility in lyophilized glasses using differential scanning calorimetry (DSC) and isothermal microcalorimetry (IMC) techniques. A second objective that emerged was a systematic study of the unusual pre-T(g) thermal events that were observed during DSC warming scans after annealing. Aspartame lyophilized with three different excipients; sucrose, trehalose and poly vinyl pyrrolidone (PVP) was studied. The aim of this work was to quantify the decrease in mobility in amorphous lyophilized aspartame formulations upon systematic postlyophilization annealing. DSC scans of aspartame:sucrose formulation (T(g) = 73 degrees C) showed the presence of a pre-T(g) endotherm which disappeared upon annealing. Aspartame:trehalose (T(g) = 112 degrees C) and aspartame:PVP (T(g) = 100 degrees C) showed a broad exotherm before T(g) and annealing caused appearance of endothermic peaks before T(g). This work also employed IMC to measure the global molecular mobility represented by structural relaxation time (tau(beta)) in both un-annealed and annealed formulations. The effect of annealing on the enthalpy relaxation of lyophilized glasses, as measured by DSC and IMC, was consistent with the behavior predicted using the Tool-Narayanaswamy-Moynihan (TNM) phenomenology (Luthra et al., 2007, in press). The results show that the systems annealed at T(g) -15 degrees C to T(g) -20 degrees C have the lowest molecular mobility.

  2. Effects of vacuum annealing and oxygen ion beam bombarding on the electrical and optical properties of ITO films deposited by E-beam evaporation

    NASA Astrophysics Data System (ADS)

    Pan, Yongqiang; Hang, Lingxia

    2012-10-01

    Tin doped indium oxide (ITO) transparent conductive thin films with composition of 10 wt% SnO2 and 89.8 wt% In2O3 have been deposited by electron beam evaporation technique on K9 glass substrates at room temperature. The post annealing processes are done in vacuum with different annealing temperature at 100, 200, 300 and 350 ° for 1 hour, respectively. The oxygen ion energy is 800 eV; oxygen ion beam bombarding time is 10,20,30,40 and 50min, respectively. The results show that conductivity of ITO thin films are improved by increasing annealing temperature. The resistivity of the ITO thin films decrease from 5.2×10-3Ω •cm at room temperature to 1.3×10-3Ω •cm(350 °C). The transmittance values of all samples in the visible range have been increased. As the oxygen ion beam bombarding time increases the resistivity reduce from 5.2×10-3Ω •cm to 9×10-4Ω •cm, the transmittance value improve from 66% to 82% at 550nm. Finally, the vacuum annealing and oxygen ion beam bombarding are done simultaneously, at temperature of 350 °C for 1 hours, ion bombardment time for 40 min. The resistivity of obtained ITO thin film is 7×10-4Ω •cm. The maximum transmittance value is above 89% in the visible wavelength region.

  3. Effects of natural and anneal-induced oxides on atomic-layer-deposition Al2O3/In0.53Ga0.47As interfaces

    NASA Astrophysics Data System (ADS)

    Yoshida, Toshiyuki

    2015-01-01

    To investigate the effects of the surface residual oxide on the interface properties of atomic-layer-deposition (ALD) Al2O3/In0.53Ga0.47As structures, we prepared various types of pre-ALD surfaces with different ratios and amounts of oxide components. All of the surfaces showed high mid-gap state densities, and the existence of the As5+ component lent a small advantage to the capacitance-voltage (C-V) behavior. By interrupting the ALD process and applying the annealing process in N2 or O2 atmosphere, additional oxide components were introduced extrinsically, which increased the mid-gap state density. The post-metallization annealing process was effective for removing the mid-gap states originating from both the native and extrinsic oxide components.

  4. Experimental quantum annealing: case study involving the graph isomorphism problem

    PubMed Central

    Zick, Kenneth M.; Shehab, Omar; French, Matthew

    2015-01-01

    Quantum annealing is a proposed combinatorial optimization technique meant to exploit quantum mechanical effects such as tunneling and entanglement. Real-world quantum annealing-based solvers require a combination of annealing and classical pre- and post-processing; at this early stage, little is known about how to partition and optimize the processing. This article presents an experimental case study of quantum annealing and some of the factors involved in real-world solvers, using a 504-qubit D-Wave Two machine and the graph isomorphism problem. To illustrate the role of classical pre-processing, a compact Hamiltonian is presented that enables a reduced Ising model for each problem instance. On random N-vertex graphs, the median number of variables is reduced from N2 to fewer than N log2 N and solvable graph sizes increase from N = 5 to N = 13. Additionally, error correction via classical post-processing majority voting is evaluated. While the solution times are not competitive with classical approaches to graph isomorphism, the enhanced solver ultimately classified correctly every problem that was mapped to the processor and demonstrated clear advantages over the baseline approach. The results shed some light on the nature of real-world quantum annealing and the associated hybrid classical-quantum solvers. PMID:26053973

  5. Effects of post-annealing treatment on the structure and photoluminescence properties of CdS/PS nanocomposites prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Zhang, Hong-yan

    2016-03-01

    CdS nanocrystals have been successfully grown on porous silicon (PS) by sol-gel method. The plan-view field emission scanning electron microscopy (FESEM) shows that the pore size of PS is smaller than 5 μm in diameter and the agglomerates of CdS are broadly distributed on the surface of PS substrate. With the increase of annealing time, the CdS nanoparticles grow in both length and diameter along the preferred orientation. The cross-sectional FESEM images of ZnO/PS show that CdS nanocrystals are uniformly penetrated into all PS layers and adhere to them very well. photoluminescence (PL) spectra demonstrate that the intensity of PL peak located at about 425 nm has almost no change after the annealing time increases. The range of emission wavelength of CdS/PS is from 425 nm to 455 nm and the PL intensity is decreasing with the annealing temperature increasing from 100 °C to 200 °C.

  6. Size effects in the thermal conductivity of gallium oxide (β-Ga2O3) films grown via open-atmosphere annealing of gallium nitride

    NASA Astrophysics Data System (ADS)

    Szwejkowski, Chester J.; Creange, Nicole C.; Sun, Kai; Giri, Ashutosh; Donovan, Brian F.; Constantin, Costel; Hopkins, Patrick E.

    2015-02-01

    Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga2O3) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga2O3 films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga2O3 films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga2O3 grown via this technique (8.8 ± 3.4 W m-1 K-1) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga2O3 film resulting from phonon scattering at the β-Ga2O3/GaN interface and thermal transport across the β-Ga2O3/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga2O3 and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.

  7. Tuning of the surface plasmon resonance in TiO{sub 2}/Au thin films grown by magnetron sputtering: The effect of thermal annealing

    SciTech Connect

    Torrell, M.; Kabir, R.; Cunha, L.; Vasilevskiy, M. I.; Vaz, F.; Cavaleiro, A.; Alves, E.; Barradas, N. P.

    2011-04-01

    Nanocomposites consisting of a dielectric matrix, such as TiO{sub 2}, with embedded noble metal nanoparticles (NPs) possess specific optical properties due to the surface plasmon resonance (SPR) effect, interesting for several applications. The aim of this work is to demonstrate that these properties are sensitive to the nanostructure of magnetron-sputtered TiO{sub 2}/Au thin films, which can be tuned by annealing. We study the role of the shape and size distribution of the NPs, as well as the influence of the crystallinity and phase composition of the host matrix on the optical response of the films. All these characteristics can be modified by vacuum annealing treatments of the deposited films. A theoretical interpretation and modeling of the experimental results obtained is presented. The model involves a modified Maxwell-Garnett approach for the effective dielectric function of the composite (describing the SPR effect) and the transfer matrix formalism for multilayer optics. Input data are based on the experimental information obtained from the detailed structural characterization of the films. It is shown that the annealing treatments can be used for controlling the optical properties of the composite films, making them attractive for decorative coatings.

  8. Solid state 13C NMR investigation of impact of annealing in lyophilized glasses.

    PubMed

    Luthra, Suman A; Pikal, Michael J; Utz, Marcel

    2008-10-01

    The purpose of this study was to investigate the impact of annealing on molecular mobility in lyophilized glasses, composed of a saccharide excipient and a small concentration of aspartame as a model "drug." Changes in molecular dynamics during annealing were monitored through carbon ((13)C) T(1) and T(1 rho) nuclear magnetic resonance relaxation times of the aspartame and the saccharides. Two different saccharides were studied, sucrose and trehalose. The local mobility of the aspartame guest was found to correlate closely with the overall structural relaxation monitored through calorimetric methods in the aspartame: sucrose formulation. In general terms, annealing leads to longer NMR relaxation times, indicating a slowing of the local dynamics. By contrast, annealing had only a minimal effect on the NMR relaxation times in aspartame: trehalose. Specificity of solid state NMR in detecting molecular mobility in guest and host molecules showed that sucrose provided a homogenous matrix for the guest drug as compared to the trehalose.

  9. DOE`s annealing prototype demonstration projects

    SciTech Connect

    Warren, J.; Nakos, J.; Rochau, G.

    1997-02-01

    One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy`s Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana`s Marble Hill nuclear power plant. The MPR team`s annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company`s nuclear power plant at Midland, Michigan. This paper describes the Department`s annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges.

  10. Dopant rearrangement and superconductivity in Bi(2)Sr(2-x)La(x)CuO(6) thin films under annealing.

    PubMed

    Cancellieri, C; Lin, P H; Ariosa, D; Pavuna, D

    2007-06-20

    By combining x-ray diffraction (XRD), x-ray photoemission spectroscopy (XPS) and AC susceptibility measurements we investigate the evolution of structural and superconducting properties of La-doped Bi-2201 thin films grown by pulsed laser deposition (PLD) under different annealing conditions. We find that the main effect of oxygen annealing is to improve the crystal coherence by enabling La cation migration to the Sr sites. This activates the desired hole doping. Short-time Ar annealing removes the interstitial oxygen between the BiO layers, fine adjusting the effective hole doping. The superconducting critical temperature is consequently enhanced. However, longer annealings result in phase separation and segregation of the homologous compound Bi-1201. We attribute this effect to the loss of Bi during the annealing.

  11. Dopant rearrangement and superconductivity in Bi2Sr2-xLaxCuO6 thin films under annealing

    NASA Astrophysics Data System (ADS)

    Cancellieri, C.; Lin, P. H.; Ariosa, D.; Pavuna, D.

    2007-06-01

    By combining x-ray diffraction (XRD), x-ray photoemission spectroscopy (XPS) and AC susceptibility measurements we investigate the evolution of structural and superconducting properties of La-doped Bi-2201 thin films grown by pulsed laser deposition (PLD) under different annealing conditions. We find that the main effect of oxygen annealing is to improve the crystal coherence by enabling La cation migration to the Sr sites. This activates the desired hole doping. Short-time Ar annealing removes the interstitial oxygen between the BiO layers, fine adjusting the effective hole doping. The superconducting critical temperature is consequently enhanced. However, longer annealings result in phase separation and segregation of the homologous compound Bi-1201. We attribute this effect to the loss of Bi during the annealing.

  12. Effect of annealing temperature on the supercapacitor behaviour of β-V{sub 2}O{sub 5} thin films

    SciTech Connect

    Jeyalakshmi, K.; Vijayakumar, S.; Nagamuthu, S.; Muralidharan, G.

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► Structural, optical, supercapacitor properties of β-V{sub 2}O{sub 5} thin films are reported. ► Influence of annealing temperature on β-V{sub 2}O{sub 5} thin films have been studied. ► Film annealed at 300 °C exhibit lower charge transfer resistance. -- Abstract: Vanadium pentoxide thin films are prepared via sol–gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 °C to 400 °C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V{sub 2}O{sub 5} in β-phase up to annealing temperature of 350 °C and at 400 °C the structural transformation to α-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2–2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 °C for an hour exhibits a maximum specific capacitance of 346 F g{sup −1} at a scan rate of 5 mV s{sup −1}.

  13. Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

    PubMed

    Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

    2014-06-01

    Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

  14. Effect of annealing temperature on the microstructure and optical-electrical properties of Cu-Al-O thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Y. J.; Liu, Z. T.; Zang, D. Y.; Che, X. S.; Feng, L. P.; Bai, X. X.

    2013-12-01

    We have successfully prepared Cu-Al-O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu-Al-O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO2. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO2 phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO2 phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical-electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3-3.8 eV depending on the annealing temperature.

  15. 454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature.

    PubMed

    Gonzalez-Martinez, Alejandro; Rodriguez-Sanchez, Alejandro; Rodelas, Belén; Abbas, Ben A; Martinez-Toledo, Maria Victoria; van Loosdrecht, Mark C M; Osorio, F; Gonzalez-Lopez, Jesus

    2015-01-01

    Identification of anaerobic ammonium oxidizing (anammox) bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing) of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON) and three full-scale bioreactors (anammox, CANON, and DEMON), was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature). The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C) and hence a range of annealing temperatures of 44-49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed.

  16. Effect of the annealing temperature on dynamic and structural properties of Co2FeAl thin films

    NASA Astrophysics Data System (ADS)

    Belmeguenai, M.; Tuzcuoglu, H.; Gabor, M.; Petrisor, T.; Tiusan, C.; Zighem, F.; Chérif, S. M.; Moch, P.

    2014-07-01

    10 nm and 50 nm thick Co2FeAl (CFA) thin films have been deposited on thermally oxidized Si(001) substrates by magnetron sputtering using a Tantalum cap layer and were then ex-situ annealed at 415°C, 515°C and 615°C during 15 minutes in vacuum. X-rays diffraction indicates that films CFA are polycrystalline and exhibit an in-plane isotropy growth. Ferromagnetic resonance measurements, using a microstrip line (MS-FMR), reveal a huge interfacial perpendicular magnetic anisotropy and small in-plane uniaxial anisotropy both annealing temperature-dependent. The MS-FMR data also allow concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with annealing temperature. Finally, the FMR linewidth decreases with increasing annealing temperature due to the enhancement of the chemical order, and allow deriving a very low intrinsic damping parameter (1.3×10-3 at 615°C).

  17. Effects of concentration and thermal annealing on the optical activation of Er implanted into GaN layers

    NASA Astrophysics Data System (ADS)

    Sathish, N.; Pathak, A. P.; Devaraju, G.; Trave, E.; Mazzoldi, P.; Dhamodaran, S.; Kulkarni, V. N.

    2012-07-01

    The wide band gap semiconductor, GaN, has emerged as an important host for rare earth-electroluminescence. The annealing behaviour and lattice site location of Er implanted into GaN were studied with the Rutherford Backscattering Spectrometry (RBS)/channelling and photoluminescence (PL) techniques. Also Er site dependence on the annealing temperature and implantation dose has been studied in detail. The optical properties of the Er-doped GaN system, evidencing their dependence on the parameters adopted during the synthesis procedure (Er implantation dose, annealing temperature) have been discussed. RBS/channelling measurements suggested that mostly Er occupy substitutional site and depends on the Er concentration. The main result is the activation of a typical Er giving rise to PL emission in the 1450-1650 nm range, related to radiative 4 I 13/2→4 I 15/2 transitions. Depending on the Er dose, we observe a specific behaviour linked to variation of the annealing temperature that strongly determines PL emission band. We observed a PL spectral shape with the main peak located at 1542 nm and shoulder peak at 1558 nm (and full width at half maximum (FWHM) of 33 nm) with a series of weaker PL structures at 1519, 1572 and 1591 nm, due to the Stark sub-level splitting.

  18. Effects of quenching, irradiation, and annealing processes on the radiation hardness of silica fiber cladding materials (I)

    NASA Astrophysics Data System (ADS)

    Wen, Jianxiang; Gong, Renxiang; Xiao, Zhongyin; Luo, Wenyun; Wu, Wenkai; Luo, Yanhua; Peng, Gang-ding; Pang, Fufei; Chen, Zhenyi; Wang, Tingyun

    2016-07-01

    Silica optical fiber cladding materials were experimentally treated by a series of processes. The treatments involved quenching, irradiation, followed by annealing and subsequent re-irradiation, and they were conducted in order to improve the radiation hardness. The microstructural properties of the treated materials were subsequently investigated. Following the treatment of the optical fiber cladding materials, the results from the electron spin resonance (ESR) analysis demonstrated that there was a significant decrease in the radiation-induced defect structures. The ESR signals became significantly weaker when the samples were annealed at 1000 °C in combination with re-irradiation. In addition, the microstructure changes within the silica optical fiber cladding material were also analyzed using Raman spectroscopy. The experimental results demonstrate that the Sisbnd Osbnd Si bending vibrations at ω3 = 800-820 cm-1 and ω4 = 1000-1200 cm-1 (with longitudinal optical (LO) and transverse optical (TO) splitting bands) were relatively unaffected by the quenching, irradiation, and annealing treatments. In particular, the annealing process resulted in the disappearance of the defect centers; however, the LO and TO modes at the ω3 and ω4 bands were relatively unchanged. With the additional support of the ESR test results, we can conclude that the combined treatment processes can significantly enhance the radiation hardness properties of the optical fiber cladding materials.

  19. Effect of annealing temperature on photoelectrochemical properties of nanocrystalline MoBi2(Se0.5Te0.5)5 thin films

    NASA Astrophysics Data System (ADS)

    Salunkhe, Manauti; Pawar, Nita; Patil, P. S.; Bhosale, P. N.

    2014-10-01

    Nanocrystalline MoBi2(Se0.5Te0.5)5 thermoelectric thin films have been deposited on ultrasonically cleaned glass and FTO-coated glass substrates by Arrested Precipitation Technique. The change in properties of MoBi2(Se0.5Te0.5)5 thin films were examined after annealing at the temperature 473 K for 3 h. The structural, morphological, compositional and electrical properties of thin films were characterized by X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive Spectroscopy, etc. Thermoelectric properties of the thin films have been evaluated by measurements of electrical conductivity and Seebeck coefficient in the temperature range 300-500 K. Our aim is to investigate the effect of annealing on behaviour of MoBi2(Se0.5Te0.5)5 thin films along with photoelectrochemical properties.

  20. Annealing effect on the magnetic induced austenite transformation in polycrystalline freestanding Ni-Co-Mn-In films produced by co-sputtering

    SciTech Connect

    Crouïgneau, G.; Porcar, L.; Pairis, S.; Mossang, E.; Eyraud, E.; Bourgault, D.; Courtois, P.

    2015-01-21

    Ni-Co-Mn-In freestanding films, with a magneto-structural transformation at room temperature were successfully produced by co-sputtering and post-annealing methods leading to film composition mastering. For a post-annealing temperature of 700 °C, the phase transformation occurs slightly above room temperature, with a twisted martensitic microstructure phase observed at 300 K by Field Emission Scanning Electron Microscopy. Magnetization measurements on a polycrystalline film showed a phase transformation from a weakly magnetic martensite to a magnetic austenite phase. Moreover, an inverse magnetocaloric effect with an entropy variation of 4 J/kg K under 5 T was also measured. A simple magneto-actuation experiment based on the magnetic induced austenite transformation was also successfully completed. The possibility to insert such films in microsystems is clearly demonstrated in this work.

  1. Annealing effect on the optical properties and laser-induced damage resistance of solgel-derived ZrO{sub 2} films

    SciTech Connect

    Liang Liping; Xu Yao; Zhang Lei; Sheng Yonggang; Wu Dong; Sun Yuhan

    2007-05-15

    By modifying some structural characteristics, the annealing process can have considerable effects on the optical performance of the solgel-derived ZrO{sub 2} xerogel films. Annealing at increasing temperature from 150 deg. C to 750 deg. C gives rise to first an increase of refractive index from 1.63 (at 633 nm) to 1.93 and then a decrease to 1.86 with the watershed temperature of 550 deg. C. This can be associated with the evolutions in both packing density and structure order of the films due to the removal of organic segments, material crystallization, and phase transformation. The optical bandgap is found to decrease from 5.63 to 4.97 eV over the entire temperature range, suggesting an increasing nonlinear absorption in the case of high-power laser irradiation. Moreover, annealing completely destroys the network structure of the xerogel films that is suspected to facilitate the energy relaxation. Thus, the combined effect of the greatly weakened endurance and possible enhanced absorption to irradiation laser leads to a monotonous decrease of the laser-induced damage threshold from 55 to 10 J/cm{sup 2} (at 1053 nm, 10 ns pulse duration, and R/1 testing mode)

  2. Rapid thermal annealing effect on amorphous hydrocarbon film deposited by CH{sub 4}/Ar dielectric barrier discharge plasma on Si wafer: Surface morphology and chemical evaluation

    SciTech Connect

    Majumdar, Abhijit; Hippler, Rainer; Bhattacharayya, S. R.

    2009-05-01

    The effects of rapid thermal annealing (RTA) on amorphous hydrogenated carbon-coated film on Si wafer, deposited by CH{sub 4}/Ar dielectric barrier discharge plasma (at half of the atmospheric pressure), was examined. Bubbles-like structures were formed on the surface of the deposited carbon-coated film. The surface morphology studied by scanning electron microscopy (SEM), which showed that the effect of RTA on the film changing the morphological property drastically at 600 deg. C and most of the bubbles started evaporating above 200 deg. C. The inbuilt energy dispersive x-ray in SEM gives the quantitative analysis of the annealed surface. X-ray photoelectron spectroscopy results of the as-deposited films agree with the IR results in that the percent of Si-CH{sub 3}, Si-O-Si and C-O(H) stretching vibrational band in the film. Most of these bands disappeared as the sample was annealed at 600 deg. C in Ar medium.

  3. An in situ GISAXS study of BCP thin films during annealing in selective solvent vapor: Solvent removal effects in films of different initial thickness

    NASA Astrophysics Data System (ADS)

    Gunkel, Ilja; Gu, Xiaodan; Hexemer, Alexander; Russell, Thomas

    2014-03-01

    Solvent vapor annealing is a rapid and effective means to achieve well-ordered structures in block copolymer (BCP) thin films. The underlying physical mechanisms however are ill understood and systematic studies of the annealing process are scarce. Here, we used grazing-incidence small-angle x-ray scattering (GISAXS) to investigate the ordering of BCP microdomains as solvent vapor was added or removed. We studied polystyrene-block-poly(4-vinyl pyridine) (PS-b-P4VP) BCP thin films of different initial thickness ranging from a few ten to a few hundred nanometers during annealing in THF vapor, a selective solvent for PS. While the degree of lateral order of the BCP microdomains in the swollen state was found to be exceptional for all film thicknesses, the packing of microdomains was found to depend on the initial film thickness and the amount of swelling. The effect of solvent removal on the degree of lateral order was studied by deswelling films of different thickness at different removal rates. Here, we observed a substantial deterioration of lateral order of microdomains that is significantly stronger than in comparable deswelling studies of BCP thin films in neutral solvent vapors. I. G. acknowledges the support by the ALS Postdoctoral Fellowship program.

  4. SiO{sub 2}/SiC structures annealed in D{sub 2}{sup 18}O: Compositional and electrical effects

    SciTech Connect

    Pitthan, E. Corrêa, S. A.; Soares, G. V.; Boudinov, H. I.; Stedile, F. C.

    2014-03-17

    Effects of water vapor annealing on SiO{sub 2}/4H-SiC structures formed following different routes were investigated using water isotopically enriched in {sup 18}O and {sup 2}H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO{sub 2} films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO{sub 2} films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO{sub 2}/SiC interfacial region was observed, attributed to the reduction of the amount of SiO{sub x}C{sub y} compounds in the interfacial region.

  5. Annealing of silicon optical fibers

    NASA Astrophysics Data System (ADS)

    Gupta, N.; McMillen, C.; Singh, R.; Podila, R.; Rao, A. M.; Hawkins, T.; Foy, P.; Morris, S.; Rice, R.; Poole, K. F.; Zhu, L.; Ballato, J.

    2011-11-01

    The recent realization of silicon core optical fibers has the potential for novel low insertion loss rack-to-rack optical interconnects and a number of other uses in sensing and biomedical applications. To the best of our knowledge, incoherent light source based rapid photothermal processing (RPP) was used for the first time to anneal glass-clad silicon core optical fibers. X-ray diffraction examination of the silicon core showed a considerable enhancement in the length and amount of single crystallinity post-annealing. Further, shifts in the Raman frequency of the silicon in the optical fiber core that were present in the as-drawn fibers were removed following the RPP treatment. Such results indicate that the RPP treatment increases the local crystallinity and therefore assists in the reduction of the local stresses in the core, leading to more homogenous fibers. The dark current-voltage characteristics of annealed silicon optical fiber diodes showed lower leakage current than the diodes based on as-drawn fibers. Photons in UV and vacuum ultraviolet (VUV) regions play a very important role in improving the bulk and carrier transport properties of RPP-treated silicon optical fibers, and the resultant annealing permits a path forward to in situ enhancement of the structure and properties of these new crystalline core optical fibers.

  6. Combined effects of transition metal (Ni and Rh) substitution and annealing/quenching on the physical properties of CaFe2As2

    SciTech Connect

    Ran, S; Bud'ko, S L; Straszheim, W E; Canfield, P C

    2014-08-01

    We performed systematic studies of the combined effects of annealing/quenching temperature (TA/Q) and T=Ni, Rh substitution (x) on the physical properties of Ca(Fe1-xTx)2As2. We constructed two-dimensional, TA/Q-x phase diagrams for the low-temperature states for both substitutions to map out the relations between ground states and compared them with that of Co substitution. Ni substitution, which brings one more extra electron per substituted atom and suppresses the c-lattice parameter at roughly the same rate as Co substitution, leads to a similar parameter range of antiferromagnetic/orthorhombic phase space in the TA/Q-x space as that found for Co substitution, but the parameter range for superconductivity has been shrunk (roughly by a factor of 2). This result is similar to what is found when Co- and Ni-substituted BaFe2As2 are compared. On the other hand, Rh substitution, which brings the same amount of extra electrons as does Co substitution, but suppresses the c-lattice parameter more rapidly, has a different phase diagram. The collapsed tetragonal phase exists much more pervasively, to the exclusion of the normal, paramagnetic, tetragonal phase. The range of antiferromagnetic/orthorhombic phase space is noticeably reduced, and the superconducting region is substantially suppressed, essentially truncated by the collapsed tetragonal phase. In addition, we found that whereas for Co substitution there was no difference between phase diagrams for samples annealed for 1 or 7 days, for Ni and Rh substitutions a second, reversible effect of annealing was revealed by 7-day anneals.

  7. Crystal growth and annealing method and apparatus

    DOEpatents

    Gianoulakis, Steven E.; Sparrow, Robert

    2001-01-01

    A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF.sub.2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing. An embodiment of the present invention comprises a secondary heater incorporated into a conventional crystal growth and annealing apparatus. The secondary heater supplies heat to minimize the temperature gradients in the crystal during the annealing process. The secondary heater can mount near the bottom of the crucible to effectively maintain appropriate temperature gradients.

  8. Rapid thermal annealing effect on the spatial resistivity distribution of AZO thin films deposited by pulsed-direct-current sputtering for solar cells applications

    NASA Astrophysics Data System (ADS)

    Ayachi, Boubakeur; Aviles, Thomas; Vilcot, Jean-Pierre; Sion, Cathy

    2016-03-01

    Room temperature deposited aluminium-doped zinc oxide thin films on glass substrate, using pulsed-DC magnetron sputtering, have shown high optical transmittance and low electrical resistivity with high uniformity of its spatial distribution after they were exposed to a rapid thermal annealing process at 400 °C under N2H2 atmosphere. It is particularly interesting to note that such an annealing process of AZO thin films for only 30 s was sufficient, on one hand to improve their optical transmittance from 73% to 86%, on the other hand to both decrease their resistivity from 1.7 × 10-3 Ω cm to 5.1 × 10-4 Ω cm and achieve the highest uniformity spatial distribution. To understand the mechanisms behind such improvements of the optoelectronic properties, electrical, optical, structural and morphological changes as a function of annealing time have been investigated by using hall measurement, UV-visible spectrometry, X-ray diffraction and scanning electron microscope imaging, respectively.

  9. Effect of the annealing temperature and ion-beam bombardment on the properties of solution-derived HfYGaO films as liquid crystal alignment layers

    SciTech Connect

    Park, Hong-Gyu; Lee, Yun-Gun; Jang, Sang Bok; Lee, Ju Hwan; Jeong, Hae-Chang; Seo, Dae-Shik; Oh, Byeong-Yun

    2015-11-15

    Hafnium yttrium gallium oxide (HfYGaO) films were applied to liquid crystal displays (LCDs) as liquid crystal (LC) alignment layers, replacing conventional polyimide (PI) layers. The HfYGaO alignment layers were prepared by fabricating solution-processed HfYGaO films, annealing them, and treating them with ion-beam (IB) irradiation. The authors studied the effects of annealing temperature and IB irradiation of the solution-derived HfYGaO films on the orientation of LC molecules. The LC molecules on the solution-derived HfYGaO films were homogeneously and uniformly aligned by IB irradiation, irrespective of the annealing temperature. Atomic force microscopy analyses revealed that the surface reformation of the HfYGaO films induced by IB irradiation strengthened the van der Waals force between the LC molecules and the HfYGaO films, leading to uniform LC alignment. Enhanced electro-optical characteristics were observed in the twisted-nematic (TN) LCDs based on IB-irradiated HfYGaO films compared with those of TN-LCDs based on PI layers, demonstrating the high application potential of the proposed solution-derived HfYGaO films as LC alignment layers.

  10. Effects of Post Annealing on I-V-T Characteristics of (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes

    NASA Astrophysics Data System (ADS)

    Akkaya, Abdullah; Ayyıldız, Enise

    2016-04-01

    Post annealing is a simple, effective and suitable method for improving the diode parameters, especially when the used chemically stable substrates like Si, III-N and ternary alloys. In our work, we were applied this method to (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes (SBDs) and investigated by temperature-dependent current-voltage (I-V-T) characteristics at optimum conditions. Optimum annealing temperature was 600°C, which it’s determined with respect to have a highest barrier height value. The temperature-dependent electrical characteristics of the annealed at 600°C (Ni/Au)/Al0.09Ga0.91N SBDs were investigated in the wide temperature range of 95-315K. The diode parameters such as ideality factor (n) and Schottky barrier height (Фb0) were obtained to be strongly temperature dependent. The observed variation in Фb0 and n can be attributed to the spatial barrier inhomogeneities in Schottky barrier height by assuming a triple Gaussian distribution (TGD) of barrier heights (BHs) at 95-145K, 145-230K and 230-315K. The modified Richardson plots and T0 analysis was performed to provide an experimental Richardson constants and bias coefficients of the mean barrier height. Furthermore, the chemical composition of the contacts was examined by the XPS depth profile analysis.

  11. Effect of granularity and annealing conditions on the magneto-resistance of the electron doped superconductor Nd1.85Ce0.15CuO4

    NASA Astrophysics Data System (ADS)

    Raveendran, N. Radhikesh; Amaladass, E. P.; Janaki, J.; Mani, Awadhesh

    2016-05-01

    A single phase polycrystalline sample of Nd1.85Ce0.15CuO4 has been synthesized and well characterized. Detailed studies on electrical resistivity behavior of this system as a function of temperature and magnetic field reveal interesting features attributable to the granularity effects. These features have been qualitatively understood based on the interplay of Josephson junction coupling and quasi particle tunneling which dictates the evolution of the observed temperature and field dependent resistivity behavior of Nd1.85Ce0.15CuO4 system. The studies also reveal significant changes with respect to annealing conditions, indicating that such compounds are very sensitive to annealing conditions. It has been observed that prolonged annealing in Argon atmosphere leads to a decrease in normal state resistivity. This is associated with a decrease in the S-I-S type Josephson tunnel junctions perhaps due to improved inter-granular coupling, nevertheless they could not be completely eliminated.

  12. Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride

    PubMed Central

    2013-01-01

    The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N2 + 5% H2), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y2O3) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was utilized to extract the bandgap of Y2O3 and interfacial layer as well as establishing the energy band alignment of Y2O3/interfacial layer/GaN structure. Three different structures of energy band alignment were obtained, and the change of band alignment influenced leakage current density-electrical breakdown field characteristics of the samples subjected to different post-deposition annealing ambients. Of these investigated samples, ability of the sample annealed in O2 ambient to withstand the highest electric breakdown field (approximately 6.6 MV/cm) at 10−6 A/cm2 was related to the largest conduction band offset of interfacial layer/GaN (3.77 eV) and barrier height (3.72 eV). PMID:23360596

  13. X-ray diffraction analysis of the effect of annealing temperature on the microstructure of magnesium oxide nanopowder

    NASA Astrophysics Data System (ADS)

    Soleimanian, V.; Aghdaee, S. R.

    2015-06-01

    In this study, nanocrystalline MgO powders were prepared using the sol-gel method and annealed in air over a temperature range of [400-700] °C. Various microstructural characteristics were determined using three different X-ray diffraction analysis approaches, i.e., modified Williamson-Hall, modified Warren-Averbach, and variance methods. The transmission electron microscopy micrographs were used to measure the size distributions of the MgO samples. The results obtained using the three different methods were in good agreement. At all temperatures, the main source of dislocation was edge type but as the annealing temperature increased, the crystallite size and dislocation density increased and decreased, respectively, thereby indicating that the crystal quality of the nanopowders was improved.

  14. Effect of annealing on structural and optical properties of sol-gel prepared Cd doped ZnO thin films

    SciTech Connect

    Sahoo, Guruprasad Jain, Mahaveer K.; Meher, S. R.

    2015-06-24

    Zn{sub 1-x}Cd{sub x}O thin films have been prepared by sol-gel spin coating method. Structural analysis shows that the Cd substitution into the wutrzite ZnO lattice is achieved up to about 20 mol %. The optical band gap is found to decrease with the increase in Cd content. Increase in the annealing temperature up to a certain critical temperature leads to band gap narrowing because of the proper substitution of Zn by Cd and thereafter the band gap increases due to Cd re-evaporation from the lattice sites. This critical temperature lowers down with the increase in Cd doping concentration. The resistivity decreases with the increase in Cd content and increases with the increase in annealing temperature.

  15. Annealing effects on the structural and electrical properties of pulsed laser deposited BaPbO3 thin films

    NASA Astrophysics Data System (ADS)

    Satish, B.; Jayaraj, M. K.

    2014-01-01

    Conductive pervoskite BaPbO3 (BPO) films as potential electrodes for ferroelectric / tuneable applications were prepared by pulsed laser deposition technique at 600°C and at 0.1 mbar oxygen partial pressure on fused silica substrates. The structural and electrical properties of the films showed a dependence on annealing temperatures and the high oxygen ambient. XRD and standard four probe method with Hall setup were employed to investigate the dependence of growth conditions on crystal structure, resistivity and the carrier concentration on annealing the BPO thin films. The surface topography was analysed by AFM. The unannealed as deposited films showed the least resistivity of 1.6 × 10-2 ohm cm and a bandgap of 4.1eV.

  16. Feldspathic granulite 79215 - Limitations on T-fo2 conditions and time of metamorphism. [temperature-oxygen fugacity relationship in annealed lunar polymict beccia

    NASA Technical Reports Server (NTRS)

    Mcgee, J. J.; Bence, A. E.; Eichhorn, G.; Schaeffer, O. A.

    1978-01-01

    Feldspathic granulite 79215, an annealed polymict breccia which has a bulk composition between anorthositic gabbro and gabbroic anorthosite, contains numerous oxide complexes in the matrix. An Ar-39-Ar-40 stepwise heating experiment gives a well-defined plateau corresponding to an age of 4.03 + or - 0.02 AE. The polmict character of this breccia and the variability of the complexes suggest that they formed as a consequence of reactions between spinel-rich clasts and matrix under the high-T low-P conditions of an ejecta blanket. The duration of annealing is estimated to have been less than 10 million yr; the absence of a KREEP component may indicate an inhomogeneous distribution of this component at the lunar surface at 4.0 AE.

  17. Annealing Would Improve beta" - Alumina Solid Electrolyte

    NASA Technical Reports Server (NTRS)

    Williams, Roger; Homer, Margie; Ryan, Margaret; Cortez, Roger; Shields, Virgil; Kisor, Adam

    2003-01-01

    A pre-operational annealing process is under investigation as a potential means of preventing a sudden reduction of ionic conductivity in a Beta"-alumina solid electrolyte (BASE) during use. On the basis of tests, the sudden reduction of ionic conductivity, followed by a slow recovery, has been found to occur during testing of the solid electrolyte and electrode components of an alkali metal thermal-to-electric converter (AMTEC) cell. At this time, high-temperature tests of limited duration have indicated the superiority of the treated BASE, but reproducible tests over thousands of hours are necessary to confirm that microcracking has been eliminated. The ionic conductivity of the treated BASE is also measured to be higher than untreated BASE at 1,073 K in low-pressure sodium vapor. Microcracking resulting in loss of conductivity was not observed with treated BASE in one high-temperature experiment, but this result must be duplicated over very long testing times to be sure of the effect. Shorter annealing times (10 to 20 hours) were found to result in significantly less loss of mass; it may be necessary for the packed powder mixture to evolve some Na2O before the Na2O can leave the ceramic.

  18. Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

    NASA Astrophysics Data System (ADS)

    Lim, Way Foong; Quah, Hock Jin; Lu, Qifeng; Mu, Yifei; Ismail, Wan Azli Wan; Rahim, Bazura Abdul; Esa, Siti Rahmah; Kee, Yeh Yee; Zhao, Ce Zhou; Hassan, Zainuriah; Cheong, Kuan Yew

    2016-03-01

    Effects of rapid thermal annealing at different temperatures (700-900 °C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO2) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy line scan analysis were insufficient to justify the presence of La in the investigated samples. The minute amount of La present in the bulk oxide was confirmed by chemical depth profiles of time-of-flight secondary ion mass spectrometry. The presence of La in the ZrO2 lattice led to the formation of oxygen vacancies, which was revealed through binding energy shift for XPS O 1s core level spectra of Zrsbnd O. The highest amount of oxygen vacancies in the sample annealed at 700 °C has yielded the acquisition of the highest electric breakdown field (∼ 6.3 MV/cm) and dielectric constant value (k = 23) as well as the highest current-time (I-t) sensor response towards oxygen gas. The attainment of both the insulating and catalytic properties in the La doped ZrO2 signified the potential of the doped ZrO2 as a metal reactive oxide on 4H-SiC substrate.

  19. Magnetic induced heating for ferritic metal annealing

    SciTech Connect

    De Witt, G.L.; Huber, D.J.

    1987-03-24

    A method is described for annealing the wall of a nuclear reactor vessel, including, positioning an electromagnet within a vertically positioned nuclear reactor vessel by lowering the electromagnet into the vessel, supplying power to the electromagnet to generate substantially uniform heat in the vessel wall, maintaining the power to the electromagnet for a predetermined length of time which will anneal the vessel wall, and removing the electromagnet.

  20. Relating material surface heterogeneity to protein adsorption: the effect of annealing of micro-contact-printed OTS patterns

    PubMed Central

    HODGKINSON, GERALD; HLADY, VLADIMIR

    2009-01-01

    We have investigated the influence of micrometer- and sub-micrometer-scale surface heterogeneities in patterned octadecyltrichlorosilane (OTS) films on human serum albumin (HSA) adsorption and its spatial distribution. 5-μm-wide OTS patterns were created on glass substrates by micro-contact printing and in some instances subsequent annealing was used to alter OTS molecule distribution within the patterns. Scanning force microscopy (SFM), advancing water contact angles and water vapor condensation figures were used to characterize the OTS films and to assess the nature of the heterogeneities within the various surface areas. High-resolution fluorescence microscopy was used to record images of fluorescently labeled albumin on OTS patterned films and fluorescence intensity was quantified and converted into the adsorbed amount. Adsorbed albumin was also characterized through SFM measurements. Combined SFM topography and lateral force microscopy (LFM) imaging revealed that micro-contact printing of OTS onto glass both replicated the stamp pattern and created small islands within the non-stamped regions between the patterns. The OTS coverage within stamped regions was not fully continuous but improved with subsequent annealing. Annealing also resulted in OTS island growth within the non-stamped regions and decreased average wettability on both the stamped and non-stamped areas. The extent of albumin adsorption was not proportional to OTS coverage, but correlated with the sub-μm distribution of OTS chains. We inferred that the surface distribution of ligands such as OTS on a sub-μm length scale determines the nature of albumin adsorption and its kinetics. PMID:19693285

  1. Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    NASA Astrophysics Data System (ADS)

    Belmeguenai, M.; Tuzcuoglu, H.; Gabor, M. S.; Petrisor, T.; Tiusan, C.; Zighem, F.; Chérif, S. M.; Moch, P.

    2014-01-01

    10 nm and 50 nm Co2FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (Ta), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing Ta, while the uniaxial anisotropy field is nearly unaffected by Ta within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with Ta. Finally, the FMR linewidth decreases when increasing Ta, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10-3 and 1.3×10-3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively).

  2. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    SciTech Connect

    Li, Qin; Song, Zhong Xiao; Ma, Fei E-mail: liyhemail@gmail.com; Li, Yan Huai E-mail: liyhemail@gmail.com; Xu, Ke Wei

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  3. The effect of annealing on properties of europium doped ZnO nanopowders obtained by a microwave hydrothermal method

    NASA Astrophysics Data System (ADS)

    Wolska-Kornio, E.; Kaszewski, J.; Witkowski, B. S.; Wachnicki, Ł.; Godlewski, M.

    2016-09-01

    Europium doped ZnO nanopowders made by microwave hydrothermal method are investigated. As zinc oxide precursor zinc nitrate(V) hexahydrate (Zn(NO3)2·6H2O) was used. Two types of nanopowder samples are examined: as grown and annealed at 750 °C in air atmosphere. We investigate the structural, morphological and optical prosperities of europium doped ZnO. Results of scanning electron microscopy, X-ray diffraction, photo- and cathodoluminescence investigations and also CIE1961 chromaticity diagram are presented.

  4. Effect of thermal annealing on structure and optical band gap of Se{sub 66}Te{sub 25}In{sub 9} thin films

    SciTech Connect

    Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin

    2015-05-15

    Thin films of a-Se{sub 66}Te{sub 25}In{sub 9} have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (E{sub g}) of a-Se{sub 66}Te{sub 25}In{sub 9} have been studied.

  5. Size effects in the thermal conductivity of gallium oxide (β-Ga{sub 2}O{sub 3}) films grown via open-atmosphere annealing of gallium nitride

    SciTech Connect

    Szwejkowski, Chester J.; Giri, Ashutosh; Donovan, Brian F.; Hopkins, Patrick E.; Creange, Nicole C.; Constantin, Costel; Sun, Kai

    2015-02-28

    Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga{sub 2}O{sub 3}) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga{sub 2}O{sub 3} films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga{sub 2}O{sub 3} films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga{sub 2}O{sub 3} grown via this technique (8.8 ± 3.4 W m{sup −1} K{sup −1}) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga{sub 2}O{sub 3} film resulting from phonon scattering at the β-Ga{sub 2}O{sub 3}/GaN interface and thermal transport across the β-Ga{sub 2}O{sub 3}/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga{sub 2}O{sub 3} and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.

  6. Recent progress of quantum annealing

    SciTech Connect

    Suzuki, Sei

    2015-03-10

    We review the recent progress of quantum annealing. Quantum annealing was proposed as a method to solve generic optimization problems. Recently a Canadian company has drawn a great deal of attention, as it has commercialized a quantum computer based on quantum annealing. Although the performance of quantum annealing is not sufficiently understood, it is likely that quantum annealing will be a practical method both on a conventional computer and on a quantum computer.

  7. Experimental determination of the effects of annealing on the micro-structures and mechanical properties of cold-worked alpha-brass

    NASA Astrophysics Data System (ADS)

    Edward, Aghogho Bright; Izelu, Christopher

    2013-12-01

    Experimental determination of the effect of annealing on the microstructure and mechanical properties of a cold work 70 - 30 brass, was carried out by subjecting specimens of the material to various degrees of cold-work (20%, 40% and 60%), by straining using a tensile machine. The specimens for each degree of cold work were then annealed at 250°C, 350°C, 450°C and 600°C, for 30 minutes. The approach involves the use of metallographic techniques: grinding, polishing and etching to reveal the microstructure while tensile test was carried out on the specimen using a Monsanto tensometer so as to obtain the load/extension graph from which the tensile strength and hardness values were obtained. From the results obtained, it was conclusive that annealing produced finer grains and eliminates prior cold work whereby the material becomes ductile. However, there should be an appreciable deformation for this effect to be noticed. One important aspect of re-crystallization in structural materials is that there is a loss of strength which accompanies disappearance of the cold-worked grains when subjected to high temperature applications. Yet, it is often difficult to establish the exact range of permissible temperature. This work establishes a range for the re-crystallization of alpha brass as 350°C < TC < 450°C, where TC is the re-crystallization temperature. Thus, it will be safe to apply this material at temperatures below 350°C, without fear of structural changes with accompanying lost in strength.

  8. Effect of annealing on the structural, optical and emissive properties of SrWO4:Ln3+ (Dy3+, Eu3+ and Sm3+) nanoparticles

    NASA Astrophysics Data System (ADS)

    Maheshwary; Singh, B. P.; Singh, R. A.

    2016-01-01

    Lanthanide ions, Ln3+ (Dy3+, Eu3+ and Sm3+) doped SrWO4 nanoparticles were synthesized using ethylene glycol (EG) as a capping agent as well as reaction medium. The X-ray diffraction (XRD) study reveals that all the Ln3+ (Dy3+, Eu3+ and Sm3+) doped samples are well crystalline in nature with a tetragonal scheelite structure of SrWO4 phase. TG study reveals that the nanophosphors are thermally stable. Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy techniques were used to obtain the information about internal and external vibrational modes present in the SrWO4 structure. Optical properties were investigated using UV-vis and photoluminescence (PL) spectroscopy. The average crystallite size was calculated using Debye-Scherrer's for as-prepared and 800 °C annealed samples and is found to be in the range of ∼35-70 nm. The luminescence intensity of Eu3+ doped SrWO4 nanoparticles under 364 nm excitation wavelength reveals that 5D0 → 7F2 transition at ∼613 nm (red) is more prominent than that of 5D0 → 7F1 transition at ∼590 nm (orange). Also upon excitation by UV radiation, the SrWO4:Dy3+ phosphor shows the yellow and blue transition lines appearing at ∼572 and 484 nm which are the characteristic electronic transitions of 4F9/2-6H13/2 and 4F9/2-6H15/2 emission line of Dy3+, respectively. Also Sm3+ doped SrWO4 nanophosphor shows its characteristic emission lines in the range of 550-720 nm, corresponding to 4G5/2 → 6HJ (J = 5/2, 7/2, 9/2 and 11/2) transitions of Sm3+ ions. The predominant orange red color can be attributed to 4G5/2 → 6H9/2 located at ∼642 nm. This is related to the polarizing effect due to the energy transfer from WO42- to the Eu3+, Dy3+ and Sm3+ sites, respectively. Effect of annealing on the photoluminescence properties of samples has been studied and it was found that luminescence intensity increases up to ∼3 times on heating the samples at 800 °C. This may be due to reduction in non-radiative decay channels

  9. Effect of annealing on the structural, optical and emissive properties of SrWO4:Ln(3+) (Dy(3+), Eu(3+) and Sm(3+)) nanoparticles.

    PubMed

    Maheshwary; Singh, B P; Singh, R A

    2016-01-01

    Lanthanide ions, Ln(3+) (Dy(3+), Eu(3+) and Sm(3+)) doped SrWO4 nanoparticles were synthesized using ethylene glycol (EG) as a capping agent as well as reaction medium. The X-ray diffraction (XRD) study reveals that all the Ln(3+) (Dy(3+), Eu(3+) and Sm(3+)) doped samples are well crystalline in nature with a tetragonal scheelite structure of SrWO4 phase. TG study reveals that the nanophosphors are thermally stable. Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy techniques were used to obtain the information about internal and external vibrational modes present in the SrWO4 structure. Optical properties were investigated using UV-vis and photoluminescence (PL) spectroscopy. The average crystallite size was calculated using Debye-Scherrer's for as-prepared and 800°C annealed samples and is found to be in the range of ∼35-70nm. The luminescence intensity of Eu(3+) doped SrWO4 nanoparticles under 364nm excitation wavelength reveals that (5)D0→(7)F2 transition at ∼613nm (red) is more prominent than that of (5)D0→(7)F1 transition at ∼590nm (orange). Also upon excitation by UV radiation, the SrWO4:Dy(3+) phosphor shows the yellow and blue transition lines appearing at ∼572 and 484nm which are the characteristic electronic transitions of (4)F9/2-(6)H13/2 and (4)F9/2-(6)H15/2 emission line of Dy(3+), respectively. Also Sm(3+) doped SrWO4 nanophosphor shows its characteristic emission lines in the range of 550-720nm, corresponding to (4)G5/2→(6)HJ (J=5/2, 7/2, 9/2 and 11/2) transitions of Sm(3+) ions. The predominant orange red color can be attributed to (4)G5/2→(6)H9/2 located at ∼642nm. This is related to the polarizing effect due to the energy transfer from WO4(2-) to the Eu(3+), Dy(3+) and Sm(3+) sites, respectively. Effect of annealing on the photoluminescence properties of samples has been studied and it was found that luminescence intensity increases up to ∼3 times on heating the samples at 800°C. This may be due to

  10. Effects of high-temperature diluted-H2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO2

    NASA Astrophysics Data System (ADS)

    Hirai, Hirohisa; Kita, Koji

    2016-04-01

    The impact of post-oxidation annealing (POA) in diluted-H2 ambient on a 4H-SiC/SiO2 interface was investigated with a cold wall furnace. Effective mobility (μeff) was extracted from lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) by applying the split capacitance-voltage (C-V) technique to the determination of charge density and a calibration technique using two MOSFETs with different gate lengths to minimize the contribution of parasitic components. POA at 1150 °C in diluted-H2 ambient resulted in an enhancement of μeff compared with that for POA in N2 ambient. It was indicated that the effects of POA in diluted H2 should be attributed to the reduction in the density of near interface traps, which disturb the electron transportation in the inversion channel, from the measurement temperature dependence of μeff as well as from the C-V curves of MOS capacitors fabricated on n-type SiC.

  11. The effects of annealing process influence on optical properties and the molecular orientation of selected organometallic compounds thin films

    NASA Astrophysics Data System (ADS)

    Zawadzka, A.; Płóciennik, P.; Czarnecka, I.; Sztupecka, J.; Łukasiak, Z.

    2012-08-01

    The paper presents the optical properties of four metallophtalocyanines (MPcs, M = Cu, Co, Mg and Zn) and two metallophtalocyanine chlorides (MClPcs, M = Al, Ga) thin films. Investigated films were fabricated by Physical Vapor Deposition (PVD) in high vacuum onto quartz substrates. After fabrication both MPcs and MClPcs thin films were undergone an annealing process in ambient atmosphere for 12 h at temperature equal 150 °C or 250 °C. The absorbance spectra were measured in range 190-1100 nm to investigate the optical and structural properties. Theoretical model of physical dimer was used to explain experimental results. The position and shape of the main absorbance peak (Q-band) in these materials are compared and discussed, taking into consideration the molecular arrangement and the longitudinal contribution which depends on the transition moment orientation. It was found that annealing process changing both optical and structural properties of MPcs and MClPcs comparing to samples without applying the process.

  12. Flow rate distribution and effect of convection and radiation heat transfer on the temperature profile during a coil annealing process

    NASA Astrophysics Data System (ADS)

    Haouam, A.; Bigerelle, M.

    2015-02-01

    Determining the temperature of several steel coils, heated in a furnace with a controlled hydrogen environment is important in an annealing process. Temperatures must be defined during heat treatment in order to guarantee metallurgical properties and acceptable reduced residual stresses. In this paper we approach hydrogen flow characteristics in the furnace and through a set of coils using an annealing non-differential model. Fluid flow is schematized as a pipe network solved by the Hardy Cross method to obtain pressure drops across the various gas flow segments. A comparison is made between measured and simulated results, confirming the adequacy of adopted assumptions and the validity of proposed model. Convective and radiative exchanges between the furnace and the coils are calculated by a discretization using the finite differences method. The convection coefficients are estimated and introduced into the boundary conditions around the coil to obtain the temperature distribution in the coils and in the covering bell. Finally, heat exchanges by convection and radiation are estimated by this model and the modeling errors are <8 °C.

  13. Effect of Thermal Annealing on the Band GAP and Optical Properties of Chemical Bath Deposited ZnSe Thin Films

    NASA Astrophysics Data System (ADS)

    Ezema, F. I.; Ekwealor, A. B. C.; Osuji, R. U.

    2006-05-01

    Zinc selenide (ZnSe) thin films were deposited on glass substrate using the chemical bath deposition method at room temperature from aqueous solutions of zinc sulphate and sodium selenosulfate in which sodium hydroxide was employed as complexing agents. The `as-deposited' ZnSe thin films are red in color and annealed in oven at 473 K for 1 hour and on a hot plate in open air at 333 K for 5 minutes, affecting the morphological and optical properties. Optical properties such as absorption coefficient a and extinction coefficient k, were determined using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-1000 nm. The films have transmittance in VIS-NIR regions that range between 26 and 87%. From absorbance and transmittance spectra, the band gap energy determined ranged between 1.60 eV and 1.75 for the `as deposited' samples, and the annealed samples exhibited a band gap shift of 0.15 eV. The high transmittance of the films together with its large band gap made them good materials for selective coatings for solar cells.

  14. Depression of positive magneto-conductance due to anti-weak localization effect in annealed In2O3-ZnO thick films

    NASA Astrophysics Data System (ADS)

    B, Shinozaki; S, Ezaki; K, Hidaka; K, Makise; T, Asano; N, Kokubo; K, Yamada; K, Yano; H, Nakamura

    2012-12-01

    We investigated the magneto-conductivity Δ in three dimensional indium zinc oxide films with different resistivity ρ prepared by postannealing in air. The weak localization theory was fitted to data of Δ H) at temperatures below 50K by the use of suitable inelastic scattering time τi(T) and spin-orbit(S-O) scattering time τi. We found the ρ dependences of both times τ and τi in a range 1.5 × 10-3Ω < ρ 300K) <4 × 10-6Ω. As ρ increases, the ratio τi/τ increases from ≍ .005 to ≍ .5 and the Δ - at low temperatures changes from positive to negative values. We suggest a picture that the annealing in air brings the change of the S-O scattering from light to heavy atoms, namely, oxygen to indium and/or zinc atoms.

  15. Improved cold rolling workability of warm rolled Fe-6.5wt%Si electrical steel with columnar grains by annealing

    NASA Astrophysics Data System (ADS)

    Mo, Yuan-ke; Zhang, Zhi-hao; Xie, Jian-xin; Fu, Hua-dong; Pan, Hong-jiang

    2015-11-01

    The effects of annealing temperature (with the annealing time being constant at 1 h) on the microstructure, ordering, residual stress, mechanical properties, and subsequent cold rolling workability of Fe-6.5wt%Si electrical steel with columnar grains were investigated, where the steel was warm rolled at 500°C with a reduction of 95%. The results show that recrystallization began to occur in the sample annealed at 575°C and that full recrystallization occurred in the sample annealed at 625°C. When the annealing temperature was 500°C or greater, the extent of reordering in the sample was high, which reduced the room-temperature plasticity. However, annealing at temperatures below 300°C did not significantly reduce the residual tensile stress on the edge of the warm rolled samples. Considering the comprehensive effects of annealing temperature on the recrystallization, reordering, residual stress, and mechanical properties of the warm rolled Fe-6.5wt%Si electrical steel with columnar grains, the appropriate annealing temperature range is 300°C-400°C. Unlike the serious edge cracks that appeared in the sample after direct cold rolling, the annealed samples could be cold rolled to a total reduction of more than 71.4% without the formation of obvious edge cracks, and bright-surface Fe-6.5wt%Si electrical steel strips with a thickness less than 0.1 mm could be fabricated by cold rolling.

  16. Influence of annealing on chain entanglement and molecular dynamics in weak dynamic asymmetry polymer blends.

    PubMed

    Lin, Yu; Tan, Yeqiang; Qiu, Biwei; Shangguan, Yonggang; Harkin-Jones, Eileen; Zheng, Qiang

    2013-01-17

    The influence of annealing above the glass transition temperature (T(g)) on chain entanglement and molecular dynamics of solution-cast poly(methyl methacrylate)/poly(styrene-co-maleic anhydride) (PMMA/SMA) blends was investigated via a combination of dynamic rheological measurement and broadband dielectric spectroscopy. Chain entanglement density increases when the annealing temperature and/or time increases, resulting from the increased efficiency of chain packing and entanglement recovery. The results of the annealing treatment without cooling revealed that the increase of the entanglement density occurred during the annealing process instead of the subsequent cooling procedure. Annealing above T(g) exerts a profound effect on segmental motion, including the transition temperature and dynamics. Namely, T(g) shifts to higher temperatures and the relaxation time (τ(max)) increases due to the increased entanglement density and decreased molecular mobility. Either T(g) or τ(max) approaches an equilibrium value gradually, corresponding to the equilibrium entanglement density that might be obtained through the theoretical predictions. However, no obvious distribution broadening is observed due to the unchanged heterogeneous dynamics. Furthermore, side group rotational motion could be freely achieved without overcoming the chain entanglement resistance. Hence, neither the dynamics nor the distribution width of the subglass relaxation (β- and γ-relaxation) processes is affected by chain entanglement resulting from annealing, indicating that the local environment of the segments is unchanged.

  17. Annealing behavior of high permeability amorphous alloys

    SciTech Connect

    Rabenberg, L.

    1980-06-01

    Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co/sub 71/ /sub 4/Fe/sub 4/ /sub 6/Si/sub 9/ /sub 6/B/sub 14/ /sub 4/ were investigated. Annealing this alloy below 400/sup 0/C results in magnetic hardening; annealing above 400/sup 0/C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation.

  18. Controlling superconductivity in La2-xSrxCuO4+δ by ozone and vacuum annealing

    DOE PAGES

    Leng, Xiang; Bozovic, Ivan

    2014-11-21

    In this study we performed a series of ozone and vacuum annealing experiments on epitaxial La2-xSrxCuO4+δ thin films. The transition temperature after each annealing step has been measured by the mutual inductance technique. The relationship between the effective doping and the vacuum annealing time has been studied. Short-time ozone annealing at 470 °C oxidizes an underdoped film all the way to the overdoped regime. The subsequent vacuum annealing at 350 °C to 380 °C slowly brings the sample across the optimal doping point back to the undoped, non-superconducting state. Several ozone and vacuum annealing cycles have been done on themore » same sample and the effects were found to be repeatable and reversible Vacuum annealing of ozone-loaded LSCO films is a very controllable process, allowing one to tune the doping level of LSCO in small steps across the superconducting dome, which can be used for fundamental physics studies.« less

  19. Effects of rapid thermal annealing on the properties of HfO{sub 2}/La{sub 2}O{sub 3} nanolaminate films deposited by plasma enhanced atomic layer deposition

    SciTech Connect

    Cao, Duo; Cheng, Xinhong Zheng, Li; Wang, Zhongjian; Xu, Dawei; Xia, Chao; Shen, Lingyan; Wang, Qian; Yu, Yuehui; Shen, DaShen

    2015-01-15

    In this work, HfO{sub 2}/La{sub 2}O{sub 3} nanolaminate films were deposited on Si substrates by plasma enhanced atomic layer deposition with in situ plasma treatment. Different annealing treatments were adopted to change films structure and performance. The upper HfO{sub 2} layers in HfO{sub 2}/La{sub 2}O{sub 3} nanolaminates were easily crystallized after annealing at 800 °C, while all the La{sub 2}O{sub 3} layers kept amorphous. X-ray photoelectron spectroscopy results indicated that LaO(OH) and La(OH){sub 3} peaks became weak, H{sub 2}O molecules in laminates evaporated during high-temperature annealing. Band diagram analysis showed that valence band offset and band gap widened after 800 °C annealing. Annealing, especially 800 °C annealing, had gentle effect on leakage current, but could obviously change capacitance and permittivity due to tetragonal and cubic phase formed in the HfO{sub 2} film.

  20. The effect of annealing on the transformation and the microstructure of Mn{sub 1−x}Cr{sub x}CoGe alloys

    SciTech Connect

    Torrens-Serra, J.; Biffi, C.A.; Santamarta, R.; Recarte, V.; Pérez-Landazábal, J.I.; Tuissi, A.; Cesari, E.

    2014-07-01

    In this work the effect of different thermal treatments on the transformation behavior of Mn{sub 1−x}Cr{sub x}CoGe alloys, with x = 0.15 and 0.20 has been analyzed. The changes in the transformation temperatures have been studied by differential scanning calorimetry (DSC). The results show that the structural transition temperature depends on the previous annealing. However, under the same heat treatment no significant change is observed on the transformation temperatures when replacing Mn by Cr. The microstructural evolution has been monitored using in-situ X-ray diffraction and transmission electron microscopy. The effect of an applied magnetic field on the transformation has been explored by SQUID magnetometry. Two different magnetic transitions are found: a first order paramagnetic (PM) to ferromagnetic (FM) corresponding to the transformation observed by calorimetry and a re-entrant spin glass to ferromagnetic transition. - Highlights: • The annealing conditions determine the magnetostructural transition. • A laminar microstructure along preferential planes observed by TEM • A RSG to ferromagnetic transition at low temperatures is detected.

  1. Effect of annealing temperature on antimicrobial and structural properties of bio-synthesized zinc oxide nanoparticles using flower extract of Anchusa italica.

    PubMed

    Azizi, Susan; Mohamad, Rosfarizan; Bahadoran, Azadeh; Bayat, Saadi; Rahim, Raha Abdul; Ariff, Arbakariya; Saad, Wan Zuhainis

    2016-08-01

    The use of nontoxic biological compounds in the synthesis of nanomaterials is an economic and eco-friendly approach. The present work was undertaken to develop zinc oxide nanoparticles (ZnO-NPs) by a green method using simple precursor from the solution consisting of zinc acetate and the flower extract of Anchusa italica (A. italica). Effect of annealing temperature on structural and antimicrobial properties was investigated. The crystalline structure of ZnO-NPs was shown using X-ray diffraction (XRD) analysis. Transmission electron microscopy (TEM) results showed that ZnO-NPs are hexagonal in shapes with mean particle size of ~8 and ~14nm at 100°C and 200°C annealing temperatures respectively. The optical band gap was increased from 3.27eV to 3.30eV with the decreasing of the particle size. The antimicrobial activity of ZnO-NPs towards Gram positive (Bacillus megaterium and Stapphylococcus aureus) and Gram negative (Escherichia coli and Salmonella typhimurium) pathogens decreased with the increasing of the heat treating temperature. In vitro cytotoxicity studies on Vero cells, a dose dependent toxicity with non-toxic effect of concentration below 142μg/mL was shown. The results indicated that A. italica is an appropriate reaction media to prepare ZnO-NPs for cosmetic and bio-medical productions. PMID:27318600

  2. Effect of pre-deposition annealing on the performance of MIS capacitor formed using atomic layer deposition of ultrathin HfO2

    NASA Astrophysics Data System (ADS)

    Maurya, Savita; Singh, B. R.; Radhakrishna, M.

    2013-06-01

    In this work, we report the effect of pre-deposition annealing on electrical characteristics of metal-insulator-semiconductor (MIS) capacitors, with HfO2 as high-k insulator. HfO2 has been deposited via atomic layer deposition (ALD) using Tetrakis [Ethyl Methyl Amino] Hafnium, Hf[N(CH3)(C2H5(]4 (TEMAHf) as metal oxide precursor and water (H2O) as oxidizing precursor. The results obtained have shown that the pre-and post deposition annealing have profound effect on electrical characteristic of MIS Capacitors. This led us to hypothesize that the preparation of Silicon substrate with pre-deposition temperature treatment forms an interfacial layer between hafnium dioxide & substrate and that will have influence on the ALD deposition and consequentially on the electrical characteristic of the device formed through ALD. By controlling the post deposition conditions, the electrical characteristic behavior is ascribed to the predeposition treatment. The promising hypothesis of such a behavior, supported with some preliminary experimental data has been presented in this short communication.

  3. The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization

    NASA Astrophysics Data System (ADS)

    Zou, Jianxiong; Liu, Bo; Jiao, Guohua; Lu, Yuanfu; Dong, Yuming; Li, Qiran

    2016-09-01

    100 nm thick RuMoC films and 5 nm thick RuMoC films with Cu capping have been deposited on Si(111) by magnetron co-sputtering with Ru and MoC confocal targets. The samples were subsequently annealed at temperatures ranging from 450 to 650 °C in vacuum at a pressure of 3 × 10-4 Pa to study the annealing effects on the microstructures and properties of RuMoC films for advanced seedless Cu metallization applications. The sheet resistances, residual oxygen contents, and microstructures of the RuMoC films have close correlation with the doping contents of Mo and C, which can be easily controlled by the deposition power ratio of MoC versus Ru targets (DPR). When DPR was 0.5, amorphous RuMoC film (marked as RuMoC II) with low sheet resistances and residual oxygen contents was obtained. The fundamental relationship between the annealing temperatures with the microstructures and properties of the RuMoC films was investigated, and a critical temperature point was revealed at about 550 °C where the components and microstructures of the RuMoC II films changed obviously. Results indicated that below 550 °C, the RuMoC II films remained amorphous due to the well-preserved C-Ru and C-Mo bonds. However, above 550 °C, the microstructures of RuMoC II films transformed from amorphous to nano-composite structure due to the breakage of Ru-C bonds, while the supersaturated solid solution MoC segregated out along the grain boundaries of Ru, thus hindering the diffusion of Cu and O atoms. This is the main mechanism of the excellent thermal stability of the RuMoC films after annealing at high temperatures. The results indicated great prospects of amorphous RuMoC films in advanced seedless Cu metallization applications.

  4. Effect of annealing conditions on the healing of sulfur vacancy in pyrite FeS2(100) surfaces

    NASA Astrophysics Data System (ADS)

    Weber, Amanda; Zhang, Yanning; Berry, Nicholas; Law, Matthew; Wu, Ruqian

    2013-03-01

    Through density functional calculations, we investigated the segregation of a sulfur vacancy from interior sites outward to the FeS2(100) surfaces in different surface conditions in order to provide guidance for the development of iron pyrite in photovoltaics applications. We found that the surfaces with interior S-vacancy are energetically unstable and bulk S-vacancies tend to hop toward the surface, in particular when the surface composition is in the stoichiometric or S-rich side. The segregation process is accompanied by redox reaction near the vacancy site, Fe(2 +) + S(1-) --> Fe(3 +) + S(2-), and the activation energy decreases near the surface region. We compare the calculated structural, energetic and electronic properties to experimental data, and provide insights for reduction of vacancy density in optimal annealing conditions. Work was supported by NSF SOLAR Program (Award CHE-1035218). Calculations were performed on NSF-XSEDE supercomputers.

  5. Study of the effect of H implantation and annealing on LiTaO3 surface blistering

    NASA Astrophysics Data System (ADS)

    Ma, Changdong; Lu, Fei; Ma, Yujie

    2015-01-01

    LiTaO3 samples are implanted by 120 keV hydrogen ion with different fluences at room temperature. H+ concentration and distribution is detected using Elastic recoil detection. Experimental results show that the threshold fluence for blistering in LiTaO3 surface is 6 × 1016 ion/cm2. Surface blistering phenomenon is studied by using optical microscopy, Rutherford back scattering spectrometry, transmission electron microscopy and atomic force microscopy. Bubble growing and surface blister's dependence on annealing process is observed and analyzed. The critical internal pressure and stress of surface blistering in H+-implanted LiTaO3 is derived based on theoretical model and experimental results. Gibbs free energy and cavity critical radius are introduced to explain the blister shrink and rupture observed in the experiment.

  6. Effect of Annealing in Magnetic Field on Ferromagnetic Nanoparticle Formation in Cu-Al-Mn Alloy with Induced Martensite Transformation.

    PubMed

    Titenko, Anatoliy; Demchenko, Lesya

    2016-12-01

    The paper considers the influence of aging of high-temperature phase on subsequent martensitic transformation in Cu-Al-Mn alloy. The morphology of behavior of martensitic transformation as a result of alloy aging under annealing in a constant magnetic field with different sample orientation relatively to the field direction and without field was studied for direct control of the processes of martensite induction at cooling. Temperature dependences of electrical resistance, magnetic susceptibility, and magnetization, as well as field dependences of magnetization, and phase composition were found. The tendency to the oriented growth of precipitated ferromagnetic phase nanoparticles in a direction of applied field and to an increase of their volume fraction under thermal magnetic treatment of material that favors a reversibility of induced martensitic transformation is observed.

  7. Note: Improving long-term stability of hot-wire anemometer sensors by means of annealing

    SciTech Connect

    Lundström, H.

    2015-08-15

    Annealing procedures for hot-wire sensors of platinum and platinum-plated tungsten have been investigated experimentally. It was discovered that the two investigated sensor metals behave quite differently during the annealing process, but for both types annealing may improve long-term stability considerably. Measured drift of sensors both without and with prior annealing is presented. Suggestions for suitable annealing temperatures and times are given.

  8. Note: Improving long-term stability of hot-wire anemometer sensors by means of annealing.

    PubMed

    Lundström, H

    2015-08-01

    Annealing procedures for hot-wire sensors of platinum and platinum-plated tungsten have been investigated experimentally. It was discovered that the two investigated sensor metals behave quite differently during the annealing process, but for both types annealing may improve long-term stability considerably. Measured drift of sensors both without and with prior annealing is presented. Suggestions for suitable annealing temperatures and times are given.

  9. Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors.

    PubMed

    Kilian, Daniel; Polster, Sebastian; Vogeler, Isabell; Jank, Michael P M; Frey, Lothar; Peukert, Wolfgang

    2014-08-13

    Indium-zinc oxide (IZO) films were deposited via flame spray pyrolysis (FSP) by pulsewise shooting a Si/SiO2 substrate directly into the combustion area of the flame. Based on UV-vis measurements of thin-films deposited on glass substrates, the optimal deposition parameters with respect to low haze values and film thicknesses of around 100 nm were determined. Thermal annealing of the deposited films at temperatures between 300 and 700 °C was carried out and staggered bottom gate thin-film transistors (TFT) were fabricated. The thin films were investigated by scanning electron microscopy, atomic force microscopy, X-ray diffraction, Fourier transformed infrared spectroscopy, and room-temperature photoluminescence measurements. The outcome of these investigations lead to two major requirements in order to implement a working TFT: (i) organic residues from the deposition process need to be removed and (ii) the net free charge carrier concentration has to be minimized by controlling the trap states in the semiconductor. The optimal annealing temperature was 300 °C as both requirements are fulfilled best in this case. This leads to field effect transistors with a low hysteresis, a saturation mobility of μSat = 0.1 cm(2)/(V s), a threshold voltage of Vth = -18.9 V, and an Ion/Ioff ratio on the order of 10(7). Depending on thermal treatment, the defect density changes significantly strongly influencing the transfer characteristics of the device. PMID:25029269

  10. The effect of annealing on a 3D SnO2/graphene foam as an advanced lithium-ion battery anode

    PubMed Central

    Tian, Ran; Zhang, Yangyang; Chen, Zhihang; Duan, Huanan; Xu, Biyi; Guo, Yiping; Kang, Hongmei; Li, Hua; Liu, Hezhou

    2016-01-01

    3D annealed SnO2/graphene sheet foams (ASGFs) are synthesized by in situ self-assembly of graphene sheets prepared by mild chemical reduction. L-ascorbyl acid is used to effectively reduce the SnO2 nanoparticles/graphene oxide colloidal solution and form the 3D conductive graphene networks. The annealing treatment contributes to the formation of the Sn-O-C bonds between the SnO2 nanoparticles and the reduced graphene sheets, which improves the electrochemical performance of the foams. The ASGF has features of typical aerogels: low density (about 19 mg cm−3), smooth surface and porous structure. The ASGF anodes exhibit good specific capacity, excellent cycling stability and superior rate capability. The first reversible specific capacity is as high as 984.2 mAh g−1 at a specific current of 200 mA g−1. Even at the high specific current of 1000 mA g−1 after 150 cycles, the reversible specific capacity of ASGF is still as high as 533.7 mAh g−1, about twice as much as that of SGF (297.6 mAh g−1) after the same test. This synthesis method can be scaled up to prepare other metal oxides particles/ graphene sheet foams for high performance lithium-ion batteries, supercapacitors, and catalysts, etc. PMID:26754468

  11. Effect of TiO2 Particles on Micro-Hardness Corrosion, Wear and Friction of Ni-P-TiO2 Composite Coatings at Different Annealing Temperatures

    NASA Astrophysics Data System (ADS)

    Gadhari, Prasanna; Sahoo, Prasanta

    2016-09-01

    The present study investigates the effect of titania particles on the micro-hardness, wear resistance, corrosion resistance and friction of electroless Ni-P-TiO2 composite coatings deposited on mild steel substrates at different annealing temperatures. The experimental results confirmed that the amount of TiO2 particles incorporated in the coatings increases with increase in the concentration of particles in the electroless bath. In presence of TiO2 particles, hardness, wear resistance and corrosion resistance of the coating improve significantly. At higher annealing temperature, wear resistance increases due to formation of hard Ni3P phase and incorporation of titania particles in the coated layer. Charge transfer resistance and corrosion current density of the coatings reduce with an increase in TiO2 particles, whereas corrosion potential increases. Microstructure changes and composition of the composite coating due to heat treatment are studied with the help of scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDXA) and X-ray diffraction (XRD) analysis.

  12. The effect of annealing on a 3D SnO2/graphene foam as an advanced lithium-ion battery anode

    NASA Astrophysics Data System (ADS)

    Tian, Ran; Zhang, Yangyang; Chen, Zhihang; Duan, Huanan; Xu, Biyi; Guo, Yiping; Kang, Hongmei; Li, Hua; Liu, Hezhou

    2016-01-01

    3D annealed SnO2/graphene sheet foams (ASGFs) are synthesized by in situ self-assembly of graphene sheets prepared by mild chemical reduction. L-ascorbyl acid is used to effectively reduce the SnO2 nanoparticles/graphene oxide colloidal solution and form the 3D conductive graphene networks. The annealing treatment contributes to the formation of the Sn-O-C bonds between the SnO2 nanoparticles and the reduced graphene sheets, which improves the electrochemical performance of the foams. The ASGF has features of typical aerogels: low density (about 19 mg cm-3), smooth surface and porous structure. The ASGF anodes exhibit good specific capacity, excellent cycling stability and superior rate capability. The first reversible specific capacity is as high as 984.2 mAh g-1 at a specific current of 200 mA g-1. Even at the high specific current of 1000 mA g-1 after 150 cycles, the reversible specific capacity of ASGF is still as high as 533.7 mAh g-1, about twice as much as that of SGF (297.6 mAh g-1) after the same test. This synthesis method can be scaled up to prepare other metal oxides particles/ graphene sheet foams for high performance lithium-ion batteries, supercapacitors, and catalysts, etc.

  13. The effect of annealing on a 3D SnO2/graphene foam as an advanced lithium-ion battery anode.

    PubMed

    Tian, Ran; Zhang, Yangyang; Chen, Zhihang; Duan, Huanan; Xu, Biyi; Guo, Yiping; Kang, Hongmei; Li, Hua; Liu, Hezhou

    2016-01-12

    3D annealed SnO2/graphene sheet foams (ASGFs) are synthesized by in situ self-assembly of graphene sheets prepared by mild chemical reduction. L-ascorbyl acid is used to effectively reduce the SnO2 nanoparticles/graphene oxide colloidal solution and form the 3D conductive graphene networks. The annealing treatment contributes to the formation of the Sn-O-C bonds between the SnO2 nanoparticles and the reduced graphene sheets, which improves the electrochemical performance of the foams. The ASGF has features of typical aerogels: low density (about 19 mg cm(-3)), smooth surface and porous structure. The ASGF anodes exhibit good specific capacity, excellent cycling stability and superior rate capability. The first reversible specific capacity is as high as 984.2 mAh g(-1) at a specific current of 200 mA g(-1). Even at the high specific current of 1000 mA g(-1) after 150 cycles, the reversible specific capacity of ASGF is still as high as 533.7 mAh g(-1), about twice as much as that of SGF (297.6 mAh g(-1)) after the same test. This synthesis method can be scaled up to prepare other metal oxides particles/ graphene sheet foams for high performance lithium-ion batteries, supercapacitors, and catalysts, etc.

  14. Mirowave annealing of silicon nitride materials

    SciTech Connect

    Kiggans, J.O. Jr.; Montgomery, F.C.; Tiegs, T.N.

    1997-08-01

    Dense silicon nitride-based ceramics were microwave annealed to determine if microwave heating offers advantages over conventional heating for the enhancement of the high temperature creep resistance. Gas pressure sintered silicon nitride (GPS-SN) and sintered reaction-bonded silicon nitride (SRBSN) were heated in microwave or graphite element furnaces at 1150{degrees}C and 1600{degrees}C. Annealed materials were characterized for the room and high temperature flexural strengths, room temperature fracture toughness values, and high temperature creep properties. In addition, SEM analyses were performed to study grain growth and other microstructural changes. The results of this study showed that both types of furnace anneals at 1150{degrees}C lowered the room temperature strength and toughness values of both SRBSN and GPS-SN materials; however, the anneal treatments at 1600{degrees}C had little effect on the room temperature properties. Both the SRBSN and GPS-SN control and annealed samples had reduced high temperature fast fracture strengths, when compared to the room temperature strengths. Creep tests at 1200{degrees}C indicated that both the SRBSN and the GPS-SN materials that were annealed by microwave heating at I 150{degrees}C for 20 h showed enhanced creep resistance, when compared to unheated controls and conventionally heated materials. No qualitative differences were seen in the microstructures of the SRBSN and the GPS-SN materials which could account for the differences in the creep properties of the annealed materials. Additional experimental work is in progress to further understand the mechanisms for the enhanced creep properties of silicon nitride materials annealed by microwave heating.

  15. Correlation of annealing with chemical stability in lyophilized pharmaceutical glasses.

    PubMed

    Luthra, Suman A; Hodge, Ian M; Utz, Marcel; Pikal, Michael J

    2008-12-01

    This research constitutes a thorough study of the relationship between the chemical stability, aging state and global molecular motion on the one hand, and microscopic local mobility in multi-component systems on the other hand. The objective of the present work was to determine whether annealing a glass below T(g) affects its chemical stability and determine if the rate of chemical degradation couples with global relaxation times determined using calorimetery, and/or with T(1) and T(1rho) relaxation times measured using ssNMR. Model compounds chosen for this research were lyophilized aspartame/sucrose and aspartame/trehalose (1:10 w/w) formulations. The chemical degradation was assessed at various temperatures using high-performance liquid chromatography (HPLC) to determine the impact of annealing on chemical stability. The rate constant for chemical degradation was estimated using stretched time kinetics. The results support the hypothesis that thermal history affects the molecular mobility required for structural relaxation and such effect is critical for chemical stability, that is, a stabilization effect upon annealing is observed.

  16. Error suppression and correction for quantum annealing

    NASA Astrophysics Data System (ADS)

    Lidar, Daniel

    While adiabatic quantum computing and quantum annealing enjoy a certain degree of inherent robustness against excitations and control errors, there is no escaping the need for error correction or suppression. In this talk I will give an overview of our work on the development of such error correction and suppression methods. We have experimentally tested one such method combining encoding, energy penalties and decoding, on a D-Wave Two processor, with encouraging results. Mean field theory shows that this can be explained in terms of a softening of the closing of the gap due to the energy penalty, resulting in protection against excitations that occur near the quantum critical point. Decoding recovers population from excited states and enhances the success probability of quantum annealing. Moreover, we have demonstrated that using repetition codes with increasing code distance can lower the effective temperature of the annealer. References: K.L. Pudenz, T. Albash, D.A. Lidar, ``Error corrected quantum annealing with hundreds of qubits'', Nature Commun. 5, 3243 (2014). K.L. Pudenz, T. Albash, D.A. Lidar, ``Quantum annealing correction for random Ising problems'', Phys. Rev. A. 91, 042302 (2015). S. Matsuura, H. Nishimori, T. Albash, D.A. Lidar, ``Mean Field Analysis of Quantum Annealing Correction''. arXiv:1510.07709. W. Vinci et al., in preparation.

  17. Effects of implantation temperature and thermal annealing on the Ga+ ion beam induced optical contrast formation in a-SiC:H

    NASA Astrophysics Data System (ADS)

    Tsvetkova, T.; Wright, C. D.; Kitova, S.; Bischoff, L.; Zuk, J.

    2013-07-01

    The effects of implantation temperature and post-implantation thermal annealing on the Ga+ ion beam induced optical contrast formation in hydrogenated silicon-carbon alloy films have been studied. As a result of the implantation a well-expressed "darkening" effect (i.e. absorption edge shift to the longer-wavelength/lower-photon-energy region) has been registered. It is accompanied by a remarkable increase of the absorption coefficient up to 2 orders of magnitude in the measured photon energy range (1.5-3.1 eV). The optical contrast thus obtained (between implanted and unimplanted regions of the film material) has been made use of in the form of optical pattern formation by computer-operated Ga+-focused ion beam. Possible applications of this effect in the area of submicron lithography and high-density optical data storage have been suggested with regard to the most widely spread focused micro-beam systems based on Ga+ liquid metal ion sources. The fact that Ga has a very low melting point (Tm = 29.8 °C) and an unusual feature of volume contraction on melting are factors which favour Ga incorporation upon ion-implantation as dispersed clusters, or small nanoparticles. It has been previously noted that Ga precipitation into nanoparticles can vary dramatically (in terms of particle size) with Ga concentration and small changes in surface implant temperature, thus affecting the optical properties of the target. The precise role of implantation temperature effects, i.e. the target temperature during Ga+ ion irradiation, on the optical contrast obtainable, has been therefore a key part of this study. Appropriate post-implantation annealing treatments were also studied, since these are expected to offer further benefits in reducing the required ion dose and enhancing contrast, thus increasing the cost-effectiveness of the bit-writing method.

  18. Thermal annealing study on P3HT: PCBM based bulk heterojunction organic solar cells using impedance spectroscopy

    SciTech Connect

    Gollu, Sankara Rao; Sharma, Ramakant G, Srinivas Gupta, Dipti

    2014-10-15

    Recently, Thermal annealing is an important process for bulk heterojunction organic solar cells (BHJ OSCs) to improve the device efficiency and performance of the organic solar cells. Here in, we have examined the changes in the efficiency and morphology of P3HT: PCBM film according to the thermal annealing temperature to find the changes during the annealing process by measuring the optical absorption, atomic force microscope and X-ray diffraction. We also investigated the effect of different annealing process conditions (without, pre- and post-annealing) on the device performance of the inverted bulk heterojunction organic solar cells consist the structure of ITO/ ZnO / P3HT: PCBM / MoO{sub 3}/ Al by measuring AC impedance characteristics. Particularly, the power conversion efficiency (PCE), crystalline nature of the polymer, light absorption and the surface smoothness of P3HT: PCBM films are significantly improved after the annealing process. These results indicated the improvement in terms of PCE, interface smoothness between the P3HT: PCBM and MoO{sub 3} layers of the post annealed device originated from the decrease of series resistance between P3HT: PCBM layer and Al electrodes, which could be due to decrease in the effective life time of charge carriers.

  19. 7 CFR 953.65 - Effective time.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 8 2011-01-01 2011-01-01 false Effective time. 953.65 Section 953.65 Agriculture... STATES Order Regulating Handling Effective Time and Termination § 953.65 Effective time. The provisions of this subpart shall become effective at such time as the Secretary may declare above his...

  20. 7 CFR 953.65 - Effective time.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 8 2013-01-01 2013-01-01 false Effective time. 953.65 Section 953.65 Agriculture... STATES Order Regulating Handling Effective Time and Termination § 953.65 Effective time. The provisions of this subpart shall become effective at such time as the Secretary may declare above his...