Modelling directional solidification

NASA Technical Reports Server (NTRS)

Wilcox, William R.

1987-01-01

An improved understanding of the phenomena of importance to directional solidification is attempted to enable explanation and prediction of differences in behavior between solidification on Earth and in space. Emphasis is now on experimentally determining the influence of convection and freezing rate fluctuations on compositional homogeneity and crystalline perfection. A correlation is sought between heater temperature profiles, buoyancy-driven convection, and doping inhomogeneities using naphthalene doped with anthracene. The influence of spin-up/spin-down is determined on compositional homogeneity and microstructure of indium gallium antimonide. The effect is determined of imposed melting - freezing cycles on indium gallium antimonide. The mechanism behind the increase of grain size caused by using spin-up/spin-down in directional solidification of mercury cadimum telluride is sought.

Antimonide-based membranes synthesis integration and strain engineering

PubMed Central

Anwar, Farhana; Klein, Brianna A.; Rasoulof, Amin; Dawson, Noel M.; Schuler-Sandy, Ted; Deneke, Christoph F.; Ferreira, Sukarno O.; Cavallo, Francesca; Krishna, Sanjay

2017-01-01

Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs,Ga)Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metal-coated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 μm and lateral sizes from 24×24μm2 to 1×1 cm2. Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to ∼3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range. PMID:27986953

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

NASA Astrophysics Data System (ADS)

Deshpande, Manisha; Maske, Dilip; Choudhari, Rashmi; Arora, Brij Mohan; Gadkari, Dattatray

2016-05-01

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS. The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.

The crystal structure of the new ternary antimonide Dy 3Cu 20+xSb 11-x ( x≈2)

NASA Astrophysics Data System (ADS)

Fedyna, L. O.; Bodak, O. I.; Fedorchuk, A. O.; Tokaychuk, Ya. O.

2005-06-01

New ternary antimonide Dy 3Cu 20+xSb 11-x ( x≈2) was synthesized and its crystal structure was determined by direct methods from X-ray powder diffraction data (diffractometer DRON-3M, Cu Kα-radiation, R=6.99%,R=12.27%,R=11.55%). The compound crystallizes with the own cubic structure type: space group F 4¯ 3m, Pearson code cF272, a=16.6150(2) Å,Z=8. The structure of the Dy 3Cu 20Sb 11-x ( x≈2) can be obtained from the structure type BaHg 11 by doubling of the lattice parameter and subtraction of 16 atoms. The studied structure was compared with the structures of known compounds, which crystallize in the same space group with similar cell parameters.

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshpande, Manisha, E-mail: manishauj@gmail.com; Department of Physics, Mithibai College, Vile Parle; Maske, Dilip

2016-05-06

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS.more » The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.« less

Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM

DOE PAGES

Wood, M. R.; Kanedy, K.; Lopez, F.; ...

2015-02-23

In this paper, we use cross-sectional scanning tunneling microscopy (STM) to reconstruct the monolayer-by-monolayer composition profile across a representative subset of MBE-grown InAs/InAsSb superlattice layers and find that antimony segregation frustrates the intended compositional discontinuities across both antimonide-on-arsenide and arsenide-on-antimonide heterojunctions. Graded, rather than abrupt, interfaces are formed in either case. We likewise find that the incorporated antimony per superlattice period varies measurably from beginning to end of the multilayer stack. Finally, although the intended antimony discontinuities predict significant discrepancies with respect to the experimentally observed high-resolution x-ray diffraction spectrum, dynamical simulations based on the STM-derived profiles provide an excellentmore » quantitative match to all important aspects of the x-ray data.« less

Synthesis and x-ray characterization of sputtered bi-alkali antimonide photocathodes

DOE PAGES

Gaowei, M.; Ding, Z.; Schubert, S.; ...

2017-11-10

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. Here in this article, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K 2CsSb sputtermore » target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.« less

Synthesis and x-ray characterization of sputtered bi-alkali antimonide photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaowei, M.; Ding, Z.; Schubert, S.

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. Here in this article, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K 2CsSb sputtermore » target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.« less

Infrared Imagery of Shuttle (IRIS). Task 1

NASA Technical Reports Server (NTRS)

Chocol, C. J.

1977-01-01

Assessment of available IR sensor technology showed that the four aerothermodynamic conditions of interest during the entry trajectory of space shuttle can be accommodated by an aircraft flying parallel to the orbiter reentry ground track. Thermal information from the sides of the vehicle can be obtained with degraded performance (temperatures below 800 K) by flying the C-141 aircraft on the opposite side of the shuttle ground track and in the direction opposite that which is optimum for lower surface viewing. An acquisition system using a 6.25-cm aperture telescope and a single indium antimonide detector were designed to meet the acquisition requirements and interface with the 91.5-cm telescope with minimum modification. An image plane system using 600 indium antimonide detectors in two arrays which requires no modification to the existing telescope was also designed. Currently available components were used in a data handling system with interfaces with the experimentors station and the HP2100 computer.

SKYLAB (SL)-4 - POST-FLIGHT (WASHINGTON, D.C.)

NASA Image and Video Library

1974-10-01

S74-34046 (October 1974) --- Dr. James C. Fletcher, left, NASA Administrator, explains the formation of the indium-antimonide crystal, manufactured in space, to President Gerald R. Ford at the White House. Standing at right is Harold Johnson, Chairman of the Massachusetts Institute of Technology. The segment of indium-antimonide is cut from a cylindrical single crystal that was partially melted and resolidified aboard the Skylab space station on Jan. 6, 1974, during the third and final manned flight. This segment is approximately one by one centimeters and about three millimeters thick. The sequence of heating and cooling was started and supervised by the members of the third Skylab crew, astronauts Gerald P. Carr, Edward G. Gibson and William R. Pogue. The crystal forming was accomplished in a special multipurpose furnace, known as the Materials Processing Facility (Skylab Technology Experiment M512). Photo credit: NASA

Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers.

PubMed

Mattiello, Mario; Niklès, Marc; Schilt, Stéphane; Thévenaz, Luc; Salhi, Abdelmajid; Barat, David; Vicet, Aurore; Rouillard, Yves; Werner, Ralph; Koeth, Johannes

2006-04-01

A new and compact photoacoustic sensor for trace gas detection in the 2-2.5 microm atmospheric window is reported. Both the development of antimonide-based DFB lasers with singlemode emission in this spectral range and a novel design of photoacoustic cell adapted to the characteristics of these lasers are discussed. The laser fabrication was made in two steps. The structure was firstly grown by molecular beam epitaxy then a metallic DFB grating was processed. The photoacoustic cell is based on a Helmholtz resonator that was designed in order to fully benefit from the highly divergent emission of the antimonide laser. An optimized modulation scheme based on wavelength modulation of the laser source combined with second harmonic detection has been implemented for efficient suppression of wall noise. Using a 2211 nm laser, sub-ppm detection limit has been demonstrated for ammonia.

Control of Anion in Corporation in the Molecular Beam Epitaxy of Ternary Antimonide Superlattices for Very Long Wavelength Infrared Detection (Postprint)

DTIC Science & Technology

2015-10-01

ASSIGNED DISTRIBUTION STATEMENT. //Signature// //Signature// GAIL J. BROWN DIANA M. CARLIN, Chief Nanoelectronic ...Materials Branch Nanoelectronic Materials Branch Functional Materials Division Functional Materials Division //Signature// KAREN

Coating Thermoelectric Devices To Suppress Sublimation

NASA Technical Reports Server (NTRS)

Sakamoto, Jeffrey; Caillat, Thierry; Fleurial, Jean-Pierre; Snyder, G. Jeffrey

2007-01-01

A technique for suppressing sublimation of key elements from skutterudite compounds in advanced thermoelectric devices has been demonstrated. The essence of the technique is to cover what would otherwise be the exposed skutterudite surface of such a device with a thin, continuous film of a chemically and physically compatible metal. Although similar to other sublimation-suppression techniques, this technique has been specifically tailored for application to skutterudite antimonides. The primary cause of deterioration of most thermoelectric materials is thermal decomposition or sublimation - one or more elements sublime from the hot side of a thermoelectric couple, changing the stoichiometry of the device. Examples of elements that sublime from their respective thermoelectric materials are Ge from SiGe, Te from Pb/Te, and now Sb from skutterudite antimonides. The skutterudite antimonides of primary interest are CoSb3 [electron-donor (n) type] and CeFe(3-x)Co(x)Sb12 [electron-acceptor (p) type]. When these compounds are subjected to typical operating conditions [temperature of 700 C and pressure <10(exp -5) torr (0.0013 Pa)], Sb sublimes from their surfaces, with the result that Sb depletion layers form and advance toward their interiors. As the depletion layer advances in a given device, the change in stoichiometry diminishes the thermal-to-electric conversion efficiency of the device. The problem, then, is to prevent sublimation, or at least reduce it to an acceptably low level. In preparation for an experiment on suppression of sublimation, a specimen of CoSb3 was tightly wrapped in a foil of niobium, which was selected for its chemical stability. In the experiment, the wrapped specimen was heated to a temperature of 700 C in a vacuum of residual pressure <10(exp -5) torr (0.0013 Pa), then cooled and sectioned. Examination of the sectioned specimen revealed that no depletion layer had formed, indicating the niobium foil prevented sublimation of antimony at 700 C. This was a considerable improvement, considering that uncoated CoSb3 had been found to decompose to form the lowest antimonide at the surface at only 600 C. Evidently, because the mean free path of Sb at the given temperature and pressure was of the order of tens of centimeters, any barrier closer than tens of centimeters (as was the niobium foil) would have suppressed transport of Sb vapor, thereby suppressing sublimation of Sb

Textural, mineralogical and stable isotope studies of hydrothermal alteration in the main sulfide zone of the Great Dyke, Zimbabwe and the precious metals zone of the Sonju Lake Intrusion, Minnesota, USA

USGS Publications Warehouse

Li, C.; Ripley, E.M.; Oberthur, T.; Miller, J.D.; Joslin, G.D.

2008-01-01

Stratigraphic offsets in the peak concentrations of platinum-group elements (PGE) and base-metal sulfides in the main sulfide zone of the Great Dyke and the precious metals zone of the Sonju Lake Intrusion have, in part, been attributed to the interaction between magmatic PGE-bearing base-metal sulfide assemblages and hydrothermal fluids. In this paper, we provide mineralogical and textural evidence that indicates alteration of base-metal sulfides and mobilization of metals and S during hydrothermal alteration in both mineralized intrusions. Stable isotopic data suggest that the fluids involved in the alteration were of magmatic origin in the Great Dyke but that a meteoric water component was involved in the alteration of the Sonju Lake Intrusion. The strong spatial association of platinum-group minerals, principally Pt and Pd sulfides, arsenides, and tellurides, with base-metal sulfide assemblages in the main sulfide zone of the Great Dyke is consistent with residual enrichment of Pt and Pd during hydrothermal alteration. However, such an interpretation is more tenuous for the precious metals zone of the Sonju Lake Intrusion where important Pt and Pd arsenides and antimonides occur as inclusions within individual plagioclase crystals and within alteration assemblages that are free of base-metal sulfides. Our observations suggest that Pt and Pd tellurides, antimonides, and arsenides may form during both magmatic crystallization and subsolidus hydrothermal alteration. Experimental studies of magmatic crystallization and hydrothermal transport/deposition in systems involving arsenides, tellurides, antimonides, and base metal sulfides are needed to better understand the relative importance of magmatic and hydrothermal processes in controlling the distribution of PGE in mineralized layered intrusions of this type. ?? Springer-Verlag 2007.

Numerical analysis of melt-solid interface shapes and growth rates of gallium antimonide in a single-zone vertical Bridgman furnace

NASA Astrophysics Data System (ADS)

Dutta, P. S.; Bhat, H. L.; Kumar, Vikram

1995-09-01

Numerical analysis has been carried out to determine the deviation of the growth rate from the ampoule lowering rate and the shape of the isotherms during the growth of gallium antimonide using the vertical Bridgman technique in a single-zone furnace. Electrical analogues have been used to model the thermal behaviour of the growth system. The standard circuit analysis technique has been used to calculate the temperature distribution in the growing crystal under various growth conditions. The effects of furnace temperature gradient near the melt-solid interface, the ampoule lowering rate, the ampoule geometry, the thermal conductivity of the melt, the mode of heat extraction from the tip of the ampoule and the extent of lateral heat loss from the side walls of the ampoule on the shape of isotherms in the crystal have been evaluated. The theoretical results presented here agree well with our previously obtained experimental results.

On the local injection of emitted electrons into micrograins on the surface of A{sup III}–B{sup V} semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Glukhovskoi, E. G.; Khazanov, A. A.

2016-06-15

The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 10{sup 16} cm{sup –3} for indium antimonidemore » and 4 × 10{sup 17} cm{sup –3} for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed.« less

Room temperature aluminum antimonide radiation detector and methods thereof

DOEpatents

Lordi, Vincenzo; Wu, Kuang Jen J.; Aberg, Daniel; Erhart, Paul; Coombs, III, Arthur W; Sturm, Benjamin W

2015-03-03

In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

ERIC Educational Resources Information Center

Steel, G. G.

1970-01-01

Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

Synthesis and thermoelectric properties of CoP(sub 3)

NASA Technical Reports Server (NTRS)

Shields, V. B.; Caillet, T.

2002-01-01

In an effort to expand the range of operation for highly efficient, segmented thermoelectric unicouples currently being developed at JPL, skutterudite phosphides are being investigated as potential high temperature segments to supplement antimonide segments that limit the use of these unicouples at a hot-side temperature of about 873-973 K.

NRL Fact Book 2010

DTIC Science & Technology

2010-01-01

service) High assurance software Distributed network-based battle management High performance computing supporting uniform and nonuniform memory...VNIR, MWIR, and LWIR high-resolution systems Wideband SAR systems RF and laser data links High-speed, high-power photodetector characteriza- tion...Antimonide (InSb) imaging system Long-wave infrared ( LWIR ) quantum well IR photodetector (QWIP) imaging system Research and Development Services

The first data on breithauptite in chromitite from the northern part of the Voykar-Synya ultramafic massif (Polar Urals)

NASA Astrophysics Data System (ADS)

Shaibekov, R. I.; Gaikovich, M. M.; Isaenko, S. I.; Shevchuk, S. S.

2017-11-01

This work presents the results of studying the mineral composition of chromite ores of the Khoila area. For the first time, nickel antimonide (breithauptite), including an Au-bearing type (with intergrowths and microinclusions of auricuprides) was found in the paragenesis with chromespinelides.

Dry etching, surface passivation and capping processes for antimonide based photodetectors

NASA Astrophysics Data System (ADS)

Dutta, Partha; Langer, Jeffery; Bhagwat, Vinay; Juneja, Jasbir

2005-05-01

III-V antimonide based devices suffer from leakage currents. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of antimonide based devices. The quest for a suitable surface passivation technology is still on. In this paper, we will present some of the promising recent developments in this area based on dry etching of GaSb based homojunction photodiodes structures followed by various passivation and capping schemes. We have developed a damage-free, universal dry etching recipe based on unique ratios of Cl2/BCl3/CH4/Ar/H2 in ECR plasma. This novel dry plasma process etches all III-V compounds at different rates with minimal damage to the side walls. In GaSb based photodiodes, an order of magnitude lower leakage current, improved ideality factor and higher responsivity has been demonstrated using this recipe compared to widely used Cl2/Ar and wet chemical etch recipes. The dynamic zero bias resistance-area product of the Cl2/BCl3/CH4/Ar/H2 etched diodes (830 Ω cm2) is higher than the Cl2/Ar (300 Ω cm2) and wet etched (330 Ω cm2) diodes. Ammonium sulfide has been known to passivate surfaces of III-V compounds. In GaSb photodiodes, the leakage current density reduces by a factor of 3 upon sulfur passivation using ammonium sulfide. However, device performance degrades over a period of time in the absence of any capping or protective layer. Silicon Nitride has been used as a cap layer by various researchers. We have found that by using silicon nitride caps, the devices exhibit higher leakage than unpassivated devices probably due to plasma damage during SiNx deposition. We have experimented with various polymers for capping material. It has been observed that ammonium sulfide passivation when combined with parylene capping layer (150 Å), devices retain their improved performance for over 4 months.

President Gerald Ford holds crystal manufactured in space during Skylab 4

NASA Technical Reports Server (NTRS)

1974-01-01

President Gerald R. Ford, center, holds encased crystal manufactured in space during Skylab 4. Dr. James C. Fletcher, left, NASA Administrator, explains the article to the Chief Executive as Dr. Harold Johnson of M.I.T. looks on. The indium-antimonide crystal was formed in Earth orbit on January 6, 1974, by the Skylab 4 astronauts.

NRL Fact Book

DTIC Science & Technology

2008-01-01

Distributed network-based battle management High performance computing supporting uniform and nonuniform memory access with single and multithreaded...pallet Airborne EO/IR and radar sensors VNIR through SWIR hyperspectral systems VNIR, MWIR, and LWIR high-resolution sys- tems Wideband SAR systems...meteorological sensors Hyperspectral sensor systems (PHILLS) Mid-wave infrared (MWIR) Indium Antimonide (InSb) imaging system Long-wave infrared ( LWIR

Antimonide-Based Compound Semiconductors for Low-Power Electronics

DTIC Science & Technology

2013-01-01

A, Madan HS, Kirk AP, Zhao DA, Mourey DA, Hudait MK, et al. Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of...et al. Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure. Appl Phys Lett. 2012;101: 231601. [18] Ali A, Madan H

Temperature-dependent quantum efficiency degradation of K-Cs-Sb bialkali antimonide photocathodes grown by a triple-element codeposition method

DOE PAGES

Ding, Zihao; Karkare, Siddharth; Feng, Jun; ...

2017-11-09

K-Cs-Sb bialkali antimonide photocathodes grown by a triple-element codeposition method have been found to have excellent quantum efficiency (QE) and outstanding near-atomic surface smoothness and have been employed in the VHF gun in the Advanced Photoinjector Experiment (APEX), however, their robustness in terms of their lifetime at elevated photocathode temperature has not yet been investigated. In this paper, the relationship between the lifetime of the K-Cs-Sb photocathode and the photocathode temperature has been investigated. The origin of the significant QE degradation at photocathode temperatures over 70 °C has been identified as the loss of cesium atoms from the K-Cs-Sb photocathode,more » based on the in situ x-ray analysis on the photocathode film during the decay process. The findings from this work will not only further the understanding of the behavior of K-Cs-Sb photocathodes at elevated temperature and help develop more temperature-robust cathodes, but also will become an important guide to the design and operation of the future high-field rf guns employing the use of such photocathodes.« less

Temperature-dependent quantum efficiency degradation of K-Cs-Sb bialkali antimonide photocathodes grown by a triple-element codeposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Zihao; Karkare, Siddharth; Feng, Jun

K-Cs-Sb bialkali antimonide photocathodes grown by a triple-element codeposition method have been found to have excellent quantum efficiency (QE) and outstanding near-atomic surface smoothness and have been employed in the VHF gun in the Advanced Photoinjector Experiment (APEX), however, their robustness in terms of their lifetime at elevated photocathode temperature has not yet been investigated. In this paper, the relationship between the lifetime of the K-Cs-Sb photocathode and the photocathode temperature has been investigated. The origin of the significant QE degradation at photocathode temperatures over 70 °C has been identified as the loss of cesium atoms from the K-Cs-Sb photocathode,more » based on the in situ x-ray analysis on the photocathode film during the decay process. The findings from this work will not only further the understanding of the behavior of K-Cs-Sb photocathodes at elevated temperature and help develop more temperature-robust cathodes, but also will become an important guide to the design and operation of the future high-field rf guns employing the use of such photocathodes.« less

Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy

DTIC Science & Technology

2016-02-04

Faculty of Engineering, Chulalongkorn University, Phayathai Road, Bangkok 10330, Thailand Tel. (+66) 2218-6524, Fax. (+66) 2218-6523 E-mail...Engineering Department Faculty of Engineering Chulalongkorn University, Phayathai Road, Bangkok 10330, Thailand Tel. 662-218-6524, Fax. 662-218-6523...September 2014 to July 2015 being conducted at Chulalongkorn University in Thailand . Following the research work on InAs quantum dots (QDs) and quantum

Thermophotovoltaic Energy Conversion for Personal Power Sources

DTIC Science & Technology

2012-02-01

FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) February 2012 2. REPORT TYPE Final 3. DATES COVERED (From - To) November 2010 to September...accepted power source to date . 3 2. Thermophotovoltaic Energy Conversion 2.1 Thermophotovoltaic Overview Figure 1 describes the primary...photovoltaic material systems for thermophotovoltaic conversion to date are gallium antimonide (GaSb)-related materials (homogeneous: 0.72 eV

Small Scale Burner Review

DTIC Science & Technology

2009-07-01

dopants in the semiconductor components of the devices (5). Venkatasubramanian (46) reviewed some state- of-the-art TE materials such as quantum-dot...conversion efficiency of a GaSb micro TPV system incorporating broadband silicon carbide (SiC) and selective emitted materials ( cobalt [Co]/nickel...carbon CFD computational fluid dynamics Co cobalt CO carbon monoxide CO2 carbon dioxide Cu copper GaSb gallium antimonide InGaAs indium gallium

Far-Infrared Magneto-Optical Studies in Germanium and Indium-Antimonide at High Intensities

NASA Astrophysics Data System (ADS)

Leung, Michael

Observations of nonlinear magneto-optical phenomena occurring in p-type Germanium and n-type Indium Antimonide are reported. These include multi-photon ionization of impurity states, and a new observation, the magneto-photon ionization of impurity states, and a new observation, the magneto-photon drag effect. A novel source of far-infrared radiation has been used. This source uses a pulsed CO(,2) LASER to optically pump a super-radiant cell, generating light with intensities up to 100 KW/cm('2) and wavelengths from 66 (mu)m to 496 (mu)m in a pulse of 150 nanoseconds duration. The Germanium samples were doped with Gallium, which is a shallow acceptor with an ionization potential of 11 meV. At liquid Helium temperature virtually all charge carriers are bound to acceptor sites. However, the high intensity radiation unexpectedly ionizes the acceptors. This is demonstrated through measurements of photoconductivity, transmission and the photo-Hall Effect. This observation is unexpected because the photon energy is one-fourth the ionization potential. Rate equations describing sequential multiphoton excitations are in agreement with the experimental results. The intermediate states are postulated to be acceptor exciton band states. Studies of the photoexcited mobility at 496 (mu)m suggest that at non-saturating levels of photoexcitation, the primary scattering mechanism of hot holes in Germanium is by neutral impurities. A new magneto-optical effect, the magneto-photon drag effect, has been studied in both Germanium and Indium Antimonide. This is simply the absorption of momentum by free carriers, from an incident photon field. It has been found that the mechanism for this effect is different in the two materials. In Germanium, the effect occurs when carriers make optical transitions from the heavy hole band to the light hole band. Thus, the magneto-optical behavior depends heavily upon the band structure. On the other hand, a modified Drude model (independent electron) has been found to be reasonably successful in describing the effect in InSb. The inclusion of non-parabolicity and hot electron effects gives a consistent description of the experimental observations.

Laser-Induced Breakdown Spectroscopy Infrared Emission From Inorganic and Organic Substances

DTIC Science & Technology

2006-11-01

using a liquid-nitrogen cooled indium antimonide (InSb) detector and the signal was recorded using a gated electronic circuit (boxcar averager). All...contaminants by analyzing the atomic spectral emission lines that result subsequent to plasmas generated by laser power. The ultraviolet-visible-near infrared...UV- Vis-NIR) spectral region exploited in conventional LIBS largely elucidates the elemental composition of the laser target by profiling these

Structure and Electrical Properties of RF Sputter Deposited Indium Antimonide Thin Films

DTIC Science & Technology

1975-12-01

Figure 6b is from the dark area in the upper right-hand corner of the micrograph. A plot of the average grain size of InSb films grown on p-a CaF2 as...1966). 29. R. F. Potter, Phys. Rev. 103, 47 (1956). 30. D. B. Holt, J. Phys. Chem. Solids 27, 1053 (1966). 31. H. F. Matare ’, Defect Electronics in

Inexpensive Method for Coating the Interior of Silica Growth Ampoules with Pyrolytic Boron Nitride

NASA Technical Reports Server (NTRS)

Wang, Jianbin; Regel, Liya L.; Wilcox, William R.

2003-01-01

An inexpensive method was developed for coating the interior of silica ampoules with hexagonal boron nitride. An aqueous solution of boric acid was used to coat the ampoule prior to drying in a vacuum at 200 C. This coating was converted to transparent boron nitride by heating in ammonia at 1000 C. Coated ampoules were used to achieve detached solidification of indium antimonide on earth.

Report of high quantum efficiency photocathode at Milano

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michelato, P.

R D activity on high quantum efficiency alkali antimonide photocathode is in progress at Milano, in the context of the ARES program. Inside a preliminary preparation chamber, Cs[sub 3]Sb layers with qunatum efficiency up to 9% (at [lambda]=543.5 nm) and lifetime of some days has been recently produced on copper, stainless steel and niobium, using a reproducible deposition procedure adapted to the material of the different substrata.

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques.

PubMed

Xu, Tao; Dick, Kimberly A; Plissard, Sébastien; Nguyen, Thanh Hai; Makoudi, Younes; Berthe, Maxime; Nys, Jean-Philippe; Wallart, Xavier; Grandidier, Bruno; Caroff, Philippe

2012-03-09

III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs(1-x)Sb(x) nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs(1-x)Sb(x) heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell.

Thermal Cycling Behavior of Zinc Antimonide Thin Films for High Temperature Thermoelectric Power Generation Applications.

PubMed

Shim, Hyung Cheoul; Woo, Chang-Su; Han, Seungwoo

2015-08-19

The zinc antimonide compound ZnxSby is one of the most efficient thermoelectric materials known at high temperatures due to its exceptional low thermal conductivity. For this reason, it continues to be the focus of active research, especially regarding its glass-like atomic structure. However, before practical use in actual surroundings, such as near a vehicle manifold, it is imperative to analyze the thermal reliability of these materials. Herein, we present the thermal cycling behavior of ZnxSby thin films in nitrogen (N2) purged or ambient atmosphere. ZnxSby thin films were prepared by cosputtering and reached a power factor of 1.39 mW m(-1) K(-2) at 321 °C. We found maximum power factor values gradually decreased in N2 atmosphere due to increasing resistivity with repeated cycling, whereas the specimen in air kept its performance. X-ray diffraction and electron microscopy observations revealed that fluidity of Zn atoms leads to nanoprecipitates, porous morphologies, and even growth of a coating layer or fiber structures on the surface of ZnxSby after repetitive heating and cooling cycles. With this in mind, our results indicate that proper encapsulation of the ZnxSby surface would reduce these unwanted side reactions and the resulting degradation of thermoelectric performance.

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.

2016-02-29

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface betweenmore » the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.« less

Aircraft Infrared Principles, Signatures, Threats, and Countermeasures

DTIC Science & Technology

2012-09-26

advances have been in two:   Indium antimonide (InSb)—MWIR of approximately 1.5 to 5.5 m  Mercury cadmium telluride (HgCdTe)—LWIR of...Surface Warfare Center [NSWC]), Crane, Indiana . A pyrotechnic does not depend upon external oxygen for reaction; and, consequently, the reaction...the analysis of missile signals necessary to score effectiveness. FIGURE 77. Seeker Test Van, NSWC, Crane, Indiana . NAWCWD TP 8773 91

Optical Jitter Effects on Target Detection and Tracking of Overhead Persistent Infrared Systems

DTIC Science & Technology

2015-12-01

infrared CdSe cadmium selenide DSP Defense Support Program FIR far-infrared FPA focal plane array Ge germanium GEO geostationary earth orbit...HBCRT High Energy Laser Beam Control Research Testbed HEL high energy laser HgCdTe mercury cadmium telluride IR infrared InSb indium antimonide...MOD model MTF modulation transfer function MWIR mid-wave infrared NIR near infrared OPIR overhead persistent infrared PbSe lead selenide

Asymptotic Analysis of Melt Growth for Antimonide-Based Compound Semiconductor Crystals in Magnetic and Electric Fields

DTIC Science & Technology

2006-10-01

F. Bliss, Gerald W. Iseler and Piotr Becla, "Combining static and rotating magnetic fields during modified vertical Bridgman crystal growth ," AIAA...Wang and Nancy Ma, "Semiconductor crystal growth by the vertical Bridgman process with rotating magnetic fields," ASME Journal of Heat Transfer...2005. 15. Stephen J. LaPointe, Nancy Ma and Donald W. Mueller, Jr., " Growth of binary alloyed semiconductor crystals by the vertical Bridgman

A study of doping influences on transmission of large-diameter gallium antimonide substrates for long-wave (LWIR) to very long wavelength (VLWIR) infra-red applications

NASA Astrophysics Data System (ADS)

Martinez, Rebecca; Tybjerg, Marius; Smith, Brian; Mowbray, Andrew; Furlong, Mark J.

2015-06-01

Gallium antimonide (GaSb) is an important Group III-V compound semiconductor for infra-red (IR) photodetectors used in sensing and imaging applications. Operating in the mid (3-5 μm) to long wavelength region (8-12 μm) of the IR spectrum, the application of GaSb detectors is extensive, encompassing military, industrial, medical and environmental uses. A significant developing technology for GaSb based detectors are those effective in the very long wavelength (VLWIR) infra-red region (13 μm and beyond) which are advantageous in space and stealth based applications which necessitate high operating temperatures. In this study different doping levels of GaSb are considered and the IR transmission spectra examined by Fourier Transform IR analysis. GaSb n-type doped material consistent in delivering long to very long wavelength transmission is demonstrated which is preferable to p-type material which requires backside thinning for IR transmission. Czochralski (Cz) grown GaSb wafers are assessed for electrical quality and uniformity results, on Hall mobility, resistivity and carrier level reported. Results of this work will establish the carrier concentration that ultimately results in high transparency substrates. In summary enhancements in IR transmission will be shown to be achieved in GaSb bulk crystals by tellurium (Te) compensation.

Effect of Interface States on the Performance of Antimonide nMOSFETs

DTIC Science & Technology

2013-01-14

Member, IEEE, Himanshu Madan , Student Member, IEEE, Michael J. Barth, J. Brad Boos, Member, IEEE, Brian R. Bennett, and Suman Datta, Fellow, IEEE...now with Intel Corporation, Hillsboro, OR 97124 USA (e-mail: AshkarAli@psualum.com). H. Madan , M. J. Barth, and S. Datta are with the Pennsylvania...S. Chau, “Sb-based CMOS devices,” U.S. Patent 7 429 747, Sep. 30, 2008. [2] A. Ali, H. Madan , A. Agrawal, I. Ramirez, R. Misra, J. B. Boos, B. R

Electrosprayed Heavy Ion and Nanodrop Beams for Surface Engineering and Electrical Propulsion

DTIC Science & Technology

2014-09-10

arsenide, gallium antimonide, gallium nitride and silicon carbide ; studied the role of the liquid’s composition on the sputtering of silicon ; study...being a material closely related to silicon . The maximum roughness for GaN, GaAs, GaSb, InP, InAs, Ge and SiC are 12.7, 11.7, 19.5, 8.1, 7.9, 17.5...poly crystalline silicon carbide and boron car- bide, respectively. The associated sputtering rates of 448, 172, and 170 nm/min far exceed the

Temperature dependence of alkali-antimonide photocathodes: Evaluation at cryogenic temperatures

DOE PAGES

Mamun, M. A.; Hernandez-Flores, M. R.; Morales, E.; ...

2017-10-24

Cs xK ySb photocathodes were manufactured on a niobium substrate and evaluated over a range of temperatures from 300 to 77 K. Vacuum conditions were identified that minimize surface contamination due to gas adsorption when samples were cooled below room temperature. Here, measurements of photocathode spectral response provided a means to evaluate the photocathode bandgap dependence on temperature and to predict photocathode quantum efficiency at 4 K, a typical temperature at which superconducting radio frequency photoguns operate.

Electrical, Optical and Structural Studies of INAS/INGASB VLWIR Superlattices

DTIC Science & Technology

2013-01-01

period measured by x-ray diffraction and the optical band gap energy determined by the photoresponse spectra. Sample InAs (Å) GaSb (Å) In (%) IF (Å...8x8 EFA. 22 Temperature-dependent lattice constants, band gap energies , and other physical data for InAs and GaSb are taken from Vurgaftman et al...gallium antimonide to achieve energy band gaps less than 50 meV with a superlattice period on the order of 68 Å. Similar to the work reported on

Bibliography of Soviet Laser Developments Number 53, May-June 1981.

DTIC Science & Technology

1982-07-20

Mukhametniyazova, V.M. Sarkisova, and S. Sukhanov (55). Recrystallization of indium antimonide films. IAN Turk, no. 1, 1981, 121-124. 309. Portnova, E.G., K.K...radioholograms. Sb 15, 104-114. (RZhRadiot, 6/81, 6Ye4l0) 506. Andreyeva, O.V., and V.I. Sukhanov (0). Effect of amplitude modulation on the...5Ye356) 714. Sukhanov , I.I., and Yu.V. Troitskiy (0). Phase characteristics of multibeam interferometers. OiS, v. 50, no. 5, 1981, 952-959. 715

MBE System for Antimonide Based Semiconductor Lasers

DTIC Science & Technology

1999-01-31

selectivity are reported as a function of plasma chemistry and DC self-bias. Experiment The samples used in this study are undoped bulk GaSb, InSb...Phys. Lett. 64(13), 1673-1675 (1994). 8. J. W. Lee, J. Hong, E. S. Lambers, C. R. Abernathy, S. J. Pearton, W. S. Hobson, and F. Ren, Plasma Chemistry and...AlGaAsSb are reported as functions of plasma chemistry , ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering desorption of

Self-Protective Measures to Enhance Airlift Operations in Hostile Environments

DTIC Science & Technology

1989-09-01

developed theater may be so disorganized that category 2 threats may be less precisely defined and maybe found throughout the area. It is ironic that in...microns, a heat-seeker 80 TABLE 13 Infrared Sensitive Photoconductors 52 Photoconductor Wavelength Sensitivity Lead Sulfide , -60°F 1 to 3.5 microns Lead... Sulfide , Room Temperature 1 to 2.8 microns Telluride, -320°F i to 5 microns Indium Antimonide, -320°F 1 to 6 microns Germanium, Doped, Room

High sensitivity 1.06 micron optical receiver for precision laser range finding. [YAG laser design

NASA Technical Reports Server (NTRS)

Scholl, F. W.; Harris, J. S., Jr.

1977-01-01

Aluminum gallium antimonide avalanche photodiodes with average gain of 10, internal quantum efficiency of greater than 60%, capacitance less than 0.2pf, and dark current of less than 1 micron were designed and fabricated for use in a low noise optical receiver suitable for 2 cm accuracy rangefinding. Topics covered include: (1) design of suitable photodetector structures; (2) epitaxial growth of AlGaSb devices; (3) fabrication of photodetectors; and (4) electro-optics characterization.

Electronic structure and magneto-optical effects in CeSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liechtenstein, A.I.; Antropov, V.P.; Harmon, B.N.

1994-04-15

The electronic structure and magneto-optical spectra of CeSb have been calculated using the self-consistent local-density approximation with explicit on-site Coulomb parameters for the correlated [ital f] state of cerium. The essential electronic structure of cerium antimonide consists of one occupied [ital f] band, predominantly with orbital [ital m]=[minus]3 character and spin [sigma]=1 located 2 eV below the Fermi level and interacting with broad Sb [ital p] bands crossing [ital E][sub [ital F

Carbon nanofibers with highly dispersed tin and tin antimonide nanoparticles: Preparation via electrospinning and application as the anode materials for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Li, Zhi; Zhang, Jiwei; Shu, Jie; Chen, Jianping; Gong, Chunhong; Guo, Jianhui; Yu, Laigui; Zhang, Jingwei

2018-03-01

One-dimensional carbon nanofibers with highly dispersed tin (Sn) and tin antimonide (SnSb) nanoparticles are prepared by electrospinning in the presence of antimony-doped tin oxide (denoted as ATO) wet gel as the precursor. The effect of ATO dosage on the microstructure and electrochemical properties of the as-fabricated Sn-SnSb/C composite nanofibers is investigated. Results indicate that ATO wet gel as the precursor can effectively improve the dispersion of Sn nanoparticles in carbon fiber and prevent them from segregation during the electrospinning and subsequent calcination processes. The as-prepared Sn-SnSb/C nanofibers as the anode materials for lithium-ion batteries exhibit high reversible capacity and stable cycle performance. Particularly, the electrode made from Sn-SnSb/C composite nanofibers obtained with 0.9 g of ATO gel has a high specific capacity of 779 mAh·g-1 and 378 mAh·g-1 at the current density of 50 mA·g-1 and 5 A·g-1, respectively, and it exhibits a capacity retention of 97% after 1200 cycles under the current density of 1 A·g-1. This is because the carbon nanofibers can form a continuous conductive network to buffer the volume change of the electrodes while Sn and Sn-SnSb nanoparticles uniformly distributed in the carbon nanofibers are free of segregation, thereby contributing to electrochemical performances of the electrodes.

Ultra low emittance electron beams from multi-alkali antimonide photocathode operated with infrared light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cultrera, L.; Gulliford, C.; Bartnik, A.

2016-03-28

The intrinsic emittance of electron beams generated from a multi-alkali photocathode operated in a high voltage DC gun is reported. The photocathode showed sensitivity extending to the infrared part of the spectrum up to 830 nm. The measured intrinsic emittances of electron beams generated with light having wavelength longer than 800 nm are approaching the limit imposed by the thermal energy of electrons at room temperature with quantum efficiencies comparable to metallic photocathodes used in operation of modern photoinjectors.

Compact TDLAS based sensor design using interband cascade lasers for mid-IR trace gas sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Lei; Tittel, Frank K.; Li, Chunguang

2016-02-25

Two compact TDLAS sensor systems based on different structural optical cores were developed. The two optical cores combine two recent developments, gallium antimonide (GaSb)-based ICL and a compact multipass gas cell (MPGC) with the goal to create compact TDLAS based sensors for the mid-IR gas detection with high detection sensitivity and low power consumption. The sensors achieved minimum detection limits of ~5 ppbv and ~8 ppbv, respectively, for CH 4 and C 2H 6 concentration measurements with a 3.7-W power consumption.

Optical characterization of semiconductor materials by using FTIR-PAS

NASA Astrophysics Data System (ADS)

Arévalo, Fabiola; Saavedra, Renato; Paulraj, M.

2008-11-01

In this paper we discuss the procedures for photoacoustic measurements for semiconducting materials, including bulk samples like Gallium Antimonide (GaSb). The optical absorption at photon energies near the band gap was measured at room temperature using Fourier Transform Infrared Photoacoustic spectroscopy (FTIR-PAS). Measurements were performed using a NEXUS 670 FTIR-spectrometer (from Thermo Nicolet) with a MTEC model 300 PA cell (MTEC Photoacoustics, Inc.). Optical properties of the studied samples were determined from their room temperature PA spectra and band gaps were calculated directly from absorption spectra

Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

DOEpatents

Sherohman, John W [Livermore, CA; Coombs, III, Arthur W.; Yee, Jick Hong [Livermore, CA; Wu, Kuang Jen J [Cupertino, CA

2007-05-29

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

InSb arrays with CCD readout for 1.0- to 5.5-microns infrared applications

NASA Technical Reports Server (NTRS)

Phillips, J. D.; Scorso, J. B.; Thom, R. D.

1976-01-01

There were two approaches for fabricating indium antimonide (InSb) arrays with CCD readout discussed. The hybrid approach integrated InSb detectors and silicon CCDs in a modular assembly via an advanced interconnection technology. In the monolithic approach, the InSb infrared detectors and the CCD readout were integrated on the same InSb chip. Both approaches utilized intrinsic (band-to-band) photodetection with the attendant advantages over extrinsic detectors. The status of each of these detector readout concepts, with pertinent performance characteristics, was presented.

Thermoelectric properties of cerium monopnictides

NASA Technical Reports Server (NTRS)

Danielson, L. R.; Alexander, M. N.; Wood, C.; Lockwood, R. A.; Vandersande, J. W.

1987-01-01

Several cerium pnictides have been synthesized from the pure elements and hot pressed into test samples. Measurements of Seebeck coefficients and electrical resistivities were performed on these samples from room temperature to 1000 C. Cerium arsenide and cerium antimonide are n-type; cerium nitride changes from p-type to n-type conduction at 800 C. The materials are semimetals with resistivities below 1 mohm/cm. Cerium arsenide is the most favorable of the pnictides studied for high-temperature thermoelectric energy conversion, with an average power factor of 15 microW/cm K sq from 500 to 1000 C.

Development of High-k Dielectric for Antimonides and a sub 350 degree Celsius III-V pMOSFET Outperforming Germanium

DTIC Science & Technology

2010-12-01

due to BTBT was observed in the surface channel device (Figure 23). Buried channel device moves the maximum E-field due to VGD in the WB cap (Figure...23(inset)) suppressing BTBT which might be the dominant component of IOFF in scaled devices [10]. Lastly, a 4.3% increase in ID was observed when...inset : SS with T). Fig. 21 : Temp Dependence of mobility. Fig. 23 :GIDL due to BTBT seen in surface channel device at 80K. Use of wide bandgap (WB

Alkaline earth filled nickel skutterudite antimonide thermoelectrics

DOEpatents

Singh, David Joseph

2013-07-16

A thermoelectric material including a body centered cubic filled skutterudite having the formula A.sub.xFe.sub.yNi.sub.zSb.sub.12, where A is an alkaline earth element, x is no more than approximately 1.0, and the sum of y and z is approximately equal to 4.0. The alkaline earth element includes guest atoms selected from the group consisting of Be, Mb, Ca, Sr, Ba, Ra and combinations thereof. The filled skutterudite is shown to have properties suitable for a wide variety of thermoelectric applications.

Mid-infrared tunable metamaterials

DOEpatents

Brener, Igal; Miao, Xiaoyu; Shaner, Eric A.; Passmore, Brandon Scott

2017-07-11

A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor plasma resonance that lies below the operating range, such as indium antimonide. Voltage biasing of the substrate generates a resonance shift in the metamaterial response that is tunable over a broad operating range. The mid-infrared tunable metamaterials have the potential to become the building blocks of chip based active optical devices in mid-infrared ranges, which can be used for many applications, such as thermal imaging, remote sensing, and environmental monitoring.

Mid-infrared tunable metamaterials

DOEpatents

Brener, Igal; Miao, Xiaoyu; Shaner, Eric A; Passmore, Brandon Scott; Jun, Young Chul

2015-04-28

A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor plasma resonance that lies below the operating range, such as indium antimonide. Voltage biasing of the substrate generates a resonance shift in the metamaterial response that is tunable over a broad operating range. The mid-infrared tunable metamaterials have the potential to become the building blocks of chip based active optical devices in mid-infrared ranges, which can be used for many applications, such as thermal imaging, remote sensing, and environmental monitoring.

Scaling Projections for Sb-based p-channel FETs

DTIC Science & Technology

2010-01-01

the products of long-standing programs on antimonide growth by molecular beam epitaxy at the QinetiQ Corp. (for InSb) and at the Naval Research...electron mobilities in the channels of III–V HEMTs at room temperature are much higher than in Si or Ge, e.g., in InAs they are in the range of 20–30,000 cm2... HEMT structures. IEEE Trans Electron Dev 1985;32:11. [25] Awano Y, Kosugi M, Kosemura K, Mimura T, Abe M. Short-channel effects in subquarter

Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance

DTIC Science & Technology

2011-12-01

grown on GaAs by molecular beam epitaxy and the defect-free active device layers. Fig. 1(c) shows the quantitative mobility spec- trum analysis (QMSA...dielectric deposition. A Pd/Au gate metal was defined using e- beam lithography and 0741-3106/$26.00 © 2011 IEEE Report Documentation Page Form...2010, pp. 6.3.1–6.3.4. [2] N. Kharche, G. Klimeck, D. Kim, J. A. del Alamo, and M. Luisier, “Performance analysis of ultra-scaled InAs HEMTs ,” in IEDM

High thermal conductivity materials for thermal management applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Broido, David A.; Reinecke, Thomas L.; Lindsay, Lucas R.

High thermal conductivity materials and methods of their use for thermal management applications are provided. In some embodiments, a device comprises a heat generating unit (304) and a thermally conductive unit (306, 308, 310) in thermal communication with the heat generating unit (304) for conducting heat generated by the heat generating unit (304) away from the heat generating unit (304), the thermally conductive unit (306, 308, 310) comprising a thermally conductive compound, alloy or composite thereof. The thermally conductive compound may include Boron Arsenide, Boron Antimonide, Germanium Carbide and Beryllium Selenide.

Excited-state thermionic emission in III-antimonides: Low emittance ultrafast photocathodes

NASA Astrophysics Data System (ADS)

Berger, Joel A.; Rickman, B. L.; Li, T.; Nicholls, A. W.; Andreas Schroeder, W.

2012-11-01

The normalized rms transverse emittance of an electron source is shown to be proportional to √m* , where m* is the effective mass of the state from which the electron is emitted, by direct observation of the transverse momentum distribution for excited-state thermionic emission from two III-V semiconductor photocathodes, GaSb and InSb, together with a control experiment employing two-photon emission from gold. Simulations of the experiment using an extended analytical Gaussian model of electron pulse propagation are in close agreement with the data.

Low-gravity homogenization and solidification of aluminum antimonide. [Apollo-Soyuz test project

NASA Technical Reports Server (NTRS)

Ang, C.-Y.; Lacy, L. L.

1976-01-01

The III-V semiconducting compound AlSb shows promise as a highly efficient solar cell material, but it has not been commercially exploited because of difficulties in compound synthesis. Liquid state homogenization and solidification of AlSb were carried out in the Apollo-Soyuz Test Project Experiment MA-044 in the hope that compositional homogeneity would be improved by negating the large density difference between the two constituents. Post-flight analysis and comparative characterization of the space-processed and ground-processed samples indicate that there are major homogeneity improvements in the low-gravity solidified material.

Dilute antimonide nitride for long wavelength infrared photodetection

NASA Astrophysics Data System (ADS)

Chen, X. Z.; Jin, Y. J.; Zhang, D. H.

2014-05-01

InSb1-xNx materials were fabricated by direct nitrogen implantation into InSb wafer and they are characterized by X-ray diffraction, Hall measurement, X-ray photoelectron spectroscopy. In-N bonds are clearly demonstrated and other forms of nitrogen, such as antisites (NIn), interstitial N2, also exist in the grown films. The ratio to the total nitrogen bonds formed in the materials varies with preparation conditions. The optical bandgap data confirmed bandgap narrowing due to the incorporation of nitrogen. Photoconductive and photovoltaic photodetectors are fabricated and the cut-off frequencies of up to 11.5 μm are demonstrated.

Directional solidification of a planar interface in the presence of a time-dependent electric current

NASA Technical Reports Server (NTRS)

Brush, L. N.; Coriell, S. R.; Mcfadden, G. B.

1990-01-01

Directional solidification of pure materials and binary alloys with a planar crystal-metal interface in the presence of a time-dependent electric current is considered. For a variety of time-dependent currents, the temperature fields and the interface velocity as functions of time are presented for indium antimonide and bismuth and for the binary alloys germanium-gallium and tin-bismuth. For the alloys, the solid composition is calculated as a function of position. Quantitative predictions are made of the effect of an electrical pulse on the solute distribution in the solidified material.

Metallization for Yb14MnSb11-Based Thermoelectric Materials

NASA Technical Reports Server (NTRS)

Firdosy, Samad; Li, Billy Chun-Yip; Ravi, Vilupanur; Sakamoto, Jeffrey; Caillat, Thierry; Ewell, Richard C.; Brandon, Erik J.

2011-01-01

Thermoelectric materials provide a means for converting heat into electrical power using a fully solid-state device. Power-generating devices (which include individual couples as well as multicouple modules) require the use of ntype and p-type thermoelectric materials, typically comprising highly doped narrow band-gap semiconductors which are connected to a heat collector and electrodes. To achieve greater device efficiency and greater specific power will require using new thermoelectric materials, in more complex combinations. One such material is the p-type compound semiconductor Yb14MnSb11 (YMS), which has been demonstrated to have one of the highest ZT values at 1,000 C, the desired operational temperature of many space-based radioisotope thermoelectric generators (RTGs). Despite the favorable attributes of the bulk YMS material, it must ultimately be incorporated into a power-generating device using a suitable joining technology. Typically, processes such as diffusion bonding and/or brazing are used to join thermoelectric materials to the heat collector and electrodes, with the goal of providing a stable, ohmic contact with high thermal conductivity at the required operating temperature. Since YMS is an inorganic compound featuring chemical bonds with a mixture of covalent and ionic character, simple metallurgical diffusion bonding is difficult to implement. Furthermore, the Sb within YMS readily reacts with most metals to form antimonide compounds with a wide range of stoichiometries. Although choosing metals that react to form high-melting-point antimonides could be employed to form a stable reaction bond, it is difficult to limit the reactivity of Sb in YMS such that the electrode is not completely consumed at an operating temperature of 1,000 C. Previous attempts to form suitable metallization layers resulted in poor bonding, complete consumption of the metallization layer or fracture within the YMS thermoelement (or leg).

Bioinspired broadband antireflection coatings on GaSb

NASA Astrophysics Data System (ADS)

Min, Wei-Lun; Betancourt, Amaury P.; Jiang, Peng; Jiang, Bin

2008-04-01

We report an inexpensive yet scalable templating technique for fabricating moth-eye antireflection gratings on gallium antimonide substrates. Non-close-packed colloidal monolayers are utilized as etching masks to pattern subwavelength-structured nipple arrays on GaSb. The resulting gratings exhibit superior broadband antireflection properties and thermal stability than conventional multilayer dielectric coatings. The specular reflection of the templated nipple arrays match with the theoretical predictions using a rigorous coupled-wave analysis model. The effect of the nipple shape and size on the antireflection properties has also been investigated by the same model. These biomimetic coatings are of great technological importance in developing efficient thermophotovoltaic cells.

Nanomaterials for Electronics and Optoelectronics

NASA Technical Reports Server (NTRS)

Koehne, Jessica E.; Meyyappan, M.

2011-01-01

Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

Skutterudite Compounds For Power Semiconductor Devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander; Vandersande, Jan

1996-01-01

New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.

Infrared Imagery of Shuttle (IRIS). Task 2. [indium antimonide sensors

NASA Technical Reports Server (NTRS)

Chocol, C. J.

1978-01-01

An opto-electronic breadboard of 10 channels of the IR temperature measuring system was produced as well as a scaled up portion of the tracking system reticle in order to verify Task 1 assumptions. The breadboards and the tests performed on them are described and both raw and reduced data are presented. Tests show that the electronics portion of the imaging system will provide a dc to 10,000 Hz bandwidth that is flat and contributes no more than 0.4% of full-scale uncertainty to the measurement. Conventional packaging is adequate for the transresistance amplifier design. Measurement errors expected from all sources tested are discussed.

Barrier infrared detector research at the Jet Propulsion Laboratory

NASA Astrophysics Data System (ADS)

Ting, David Z.; Keo, Sam A.; Liu, John K.; Mumolo, Jason M.; Khoshakhlagh, Arezou; Soibel, Alexander; Nguyen, Jean; Höglund, Linda; Rafol, B., , Sir; Hill, Cory J.; Gunapala, Sarath D.

2012-10-01

The barrier infrared detector device architecture offers the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. The versatility of the antimonide material system, with the availability of three different types of band offsets for flexibility in device design, provides the ideal setting for implementing barrier infrared detectors. We describe the progress made at the NASA Jet Propulsion Laboratory in recent years in Barrier infrared detector research that resulted in high-performance quantum structure infrared detectors, including the type-II superlattice complementary barrier infrared detector (CBIRD), and the high operating quantum dot barrier infrared detector (HOT QD-BIRD).

Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect

DTIC Science & Technology

2011-05-01

SdH) magnetotrans- port measurements at a low temperature (2–15 K ) and a high magnetic field (0–9 T). We also present an EOT scalability study that...Fig. 2. Measured and modeled (a) split Cg–Vg and (b) G−Vg characteristics of an InAs0.8Sb0.2 QW-MOSFET at 77 K . dielectric (0.7 nm EOT) and barrier...measured and modeled split Cg–Vg and G−Vg characteristics of InAs0.8Sb0.2 QW-MOSFET at 77 K and the frequency dispersion characteristics due to the in

Dilute antimonide nitride for long wavelength infrared photodetection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, X. Z.; Jin, Y. J.; Zhang, D. H.

2014-05-15

InSb{sub 1−x}N{sub x} materials were fabricated by direct nitrogen implantation into InSb wafer and they are characterized by X-ray diffraction, Hall measurement, X-ray photoelectron spectroscopy. In-N bonds are clearly demonstrated and other forms of nitrogen, such as antisites (N{sub In}), interstitial N{sub 2}, also exist in the grown films. The ratio to the total nitrogen bonds formed in the materials varies with preparation conditions. The optical bandgap data confirmed bandgap narrowing due to the incorporation of nitrogen. Photoconductive and photovoltaic photodetectors are fabricated and the cut-off frequencies of up to 11.5 μm are demonstrated.

Effects of systemic and non-systemic stresses on the thermal characteristics of corn

NASA Technical Reports Server (NTRS)

Kumar, R.; Silva, L. F.; Baer, M. E.

1978-01-01

Experiments were conducted on corn plants using a calibrated spectroradiometer under field conditions in the indium antimonide channel (InSb, 2.8 to 5.6 mm) and the mercury cadmium telluride channel (HgCdTe, 7 to 14 mm). A ground cover experiment, an experiment on nonsystemic corn plants, and an experiment on systemic-stressed corn plants were included. The average spectral radiance temperature of corn plant populations was found (1) to be statistically significantly different for four healthy corn plant populations, (2) to increase with increased blight severity, and (3) to be statistically significantly different for varying rates of nitrogen applications.

Chemical route for formation of intermetallic Zn 4Sb 3 phase

NASA Astrophysics Data System (ADS)

Denoix, A.; Solaiappan, A.; Ayral, R. M.; Rouessac, F.; Tedenac, J. C.

2010-05-01

Synthesis of intermetallic zinc antimonide phases via low temperature solution route was investigated. Trial experiments were carried out under inert atmosphere at 70 °C using metallic Zn, SbCl 3 and NaBH 4 as reactants and tetrahydrofuran (THF), dimethylsulfoxide (DMSO) as organic media. Powder X-ray analysis confirmed the nucleation and growth of ZnSb phases in presence of excess Zn. SEM analysis revealed the existence of core-shell structure comprising of Zn core and Sb shell. Such particles get transformed into Zn 4Sb 3 crystalline phases upon thermal treatment at 300 °C/6 h in a silica tube closed under high secondary vacuum.

The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides

NASA Technical Reports Server (NTRS)

Gertner, E. R.

1980-01-01

Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

A Study of the Irradiance- and Temperature-Dependence of Mid-Wave-Infrared (MWIR) Absorption in Indium Antimonide (InSb)

DTIC Science & Technology

2008-08-01

Direct valence to conduction band transitions (constant k vector ), (B) Indirect valence to conduction band transitions aided by photon/phonon coupling...feilddt g g dk dk dE dxdk qE dt dt v d v dt→ = = = − h h 1 (2.7) and g dx v dt = , which means that feild dk qE dt = −h . In order to find the...x B k xΨ = + where A and B are variables that are solved, kx is the wave vector and x is the distance. For a realistic solution, the wave function

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

NASA Astrophysics Data System (ADS)

Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

2017-12-01

Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

Estimation of the curvature of the solid liquid interface during Bridgman crystal growth

NASA Astrophysics Data System (ADS)

Barat, Catherine; Duffar, Thierry; Garandet, Jean-Paul

1998-11-01

An approximate solution for the solid/liquid interface curvature due to the crucible effect in crystal growth is derived from simple heat flux considerations. The numerical modelling of the problem carried out with the help of the finite element code FIDAP supports the predictions of our analytical expression and allows to identify its range of validity. Experimental interface curvatures, measured in gallium antimonide samples grown by the vertical Bridgman method, are seen to compare satisfactorily to analytical and numerical results. Other literature data are also in fair agreement with the predictions of our models in the case where the amount of heat carried by the crucible is small compared to the overall heat flux.

Modulational instability of helicon waves in a magnetoactive semiconductor n-InSb

NASA Astrophysics Data System (ADS)

Salimullah, M.; Ferdous, T.

1984-03-01

In this paper the modulational instabilithy of a beam of high amplitude helicon wave in a magnetoactive piezoelectric semiconductor is studied. The nonlinear response of electrons in the semiconductor plasma has been found by following the fluid model of homogeneous plasmas. The low frequency nonlinearity has been taken through the ponderomotive force on electrons, whereas the nonlinearity in the scattered helicon waves arises through the nonlinear current densities of electrons. For typical plasma parameters in n-type indium antimonide and for a considerable power density (approximately 20 kW/sq cm) of the incident helicon beam, the growth rate of the modulational instability is quite high (approximately 10 to the 7th rad/s).

Characterization and Modeling of Indium Gallium Antimonide Avalanche Photodiode and of Indium Gallium Arsenide Two-band Detector

NASA Technical Reports Server (NTRS)

2006-01-01

A model of the optical properties of Al(x)Ga(1-x)As(y)Sb(1-y) and In(x)Ga(1-x)As(y)Sb(1-y) is presented, including the refractive, extinction, absorption and reflection coefficients in terms of the optical dielectric function of the materials. Energy levels and model parameters for each binary compound are interpolated to obtain the needed ternaries and quaternaries for various compositions. Bowing parameters are considered in the interpolation scheme to take into account the deviation of the calculated ternary and quaternary values from experimental data due to lattice disorders. The inclusion of temperature effects is currently being considered.

Experience with the UKIRT InSb array camera

NASA Technical Reports Server (NTRS)

Mclean, Ian S.; Casali, Mark M.; Wright, Gillian S.; Aspin, Colin

1989-01-01

The cryogenic infrared camera, IRCAM, has been operating routinely on the 3.8 m UK Infrared Telescope on Mauna Kea, Hawaii for over two years. The camera, which uses a 62x58 element Indium Antimonide array from Santa Barbara Research Center, was designed and built at the Royal Observatory, Edinburgh which operates UKIRT on behalf of the UK Science and Engineering Research Council. Over the past two years at least 60% of the available time on UKIRT has been allocated for IRCAM observations. Described here are some of the properties of this instrument and its detector which influence astronomical performance. Observational techniques and the power of IR arrays with some recent astronomical results are discussed.

A system overview of the Airborne Visible/Infrared Imaging Spectrometer (AVIRIS)

NASA Technical Reports Server (NTRS)

Porter, Wallace M.; Enmark, Harry T.

1987-01-01

The AVIRIS instrument has been designed to do high spectral resolution remote sensing of the Earth. Utilizing both silicon and indium antimonide line array detectors, AVIRIS covers the spectral region from 0.41 to 2.45 microns in 10-nm bands. It was designed to fly aboard NASA's U-2 and ER-2 aircraft, where it will simulate the performance of future spacecraft instrumentation. Flying at an altitude of 20 km, it has an instantaneous field of view of 20 m and views a swath over 10 km wide. With an ability to record 40 minutes of data, it can, during a single flight, capture 500 km of flight line.

Gravitational influences on the liquid-state homogenization and solidification of aluminum antimonide. [space processing of solar cell material

NASA Technical Reports Server (NTRS)

Ang, C.-Y.; Lacy, L. L.

1979-01-01

Typical commercial or laboratory-prepared samples of polycrystalline AlSb contain microstructural inhomogeneities of Al- or Sb-rich phases in addition to the primary AlSb grains. The paper reports on gravitational influences, such as density-driven convection or sedimentation, that cause microscopic phase separation and nonequilibrium conditions to exist in earth-based melts of AlSb. A triple-cavity electric furnace is used to homogenize the multiphase AlSb samples in space and on earth. A comparative characterization of identically processed low- and one-gravity samples of commercial AlSb reveals major improvements in the homogeneity of the low-gravity homogenized material.

Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons

PubMed Central

Lee, Sooheyong; Williams, G. Jackson; Campana, Maria I.; Walko, Donald A.; Landahl, Eric C.

2016-01-01

Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acoustic oscillations at frequencies of several GHz. PMID:26751616

Tunable multiband plasmonic response of indium antimonide touching microrings in the terahertz range.

PubMed

Moridsadat, Maryam; Golmohammadi, Saeed; Baghban, Hamed

2018-06-01

In this paper, we propose a terahertz (THz) plasmonic structure that supports three resonance modes, including the charge transfer plasmon (CTP), the bonding dipole-dipole plasmon, and the antibonding dipole-dipole plasmon, which can be strongly tuned by geometrical parameters, passively, and the temperature, actively. The structure exhibits a considerable thermal sensitivity of more than 0.01 THz/K. The introduced multiband and tunable THz plasmonic structures offer important applications in thermal switches, thermo-optical modulators, broadband filters, design of multifunctional molecules originating from the multiband specification of the proposed structure, and improvement in plasmonic sensor applications stemming from a detailed study of the CTP mode.

Development and Demonstration of a 25 Watt Thermophotovoltaic Power Source for a Hybrid Power System

NASA Technical Reports Server (NTRS)

Doyle, Edward; Shukla, Kailash; Metcalfe, Christopher

2001-01-01

The development of a propane-fueled, 25 W thermophotovoltaic (TPV) power source for use in a hybrid power system is described. The TPV power source uses a platinum emitting surface with an anti-reflective coating to radiate to gallium antimonide photocells, which converts the radiation to electric power. The development program started with the design and fabrication of an engineering prototype system. This was used as a component development vehicle to develop the technologies for the various components. A 25 W demonstration prototype was then designed and fabricated using the most advanced component approaches. The designs and test results from this development program are discussed.

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

NASA Astrophysics Data System (ADS)

Jadhav, Vidya

2015-09-01

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0> orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 1017 cm-3 were irradiated at 100 MeV Fe7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 1010-1 × 1014 ions cm-2. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet-visible-NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 1013, 5 × 1013 and 1 × 1014 ions cm-2, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 1013 ion cm-2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E1, E1 + Δ and E2 band gaps in all irradiated samples.

Behavior of GaSb (100) and InSb (100) surfaces in the presence of H2O2 in acidic and basic cleaning solutions

NASA Astrophysics Data System (ADS)

Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

2017-03-01

Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III-V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H2O2 plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H2O2 because gallium and indium are in the thermodynamically stable forms of H2GaO3- and InO2-, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H2O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of InSb with dilution of the APM solution was not significant. Additionally, the oxidation behavior of gallium and indium was more sensitive to the composition of the HPM and APM solutions than that of antimony. Therefore, the surface properties and etching characteristics of GaSb and InSb in HPM and APM solutions are mainly dependent on the behavior of the group III elements rather than the group V elements.

Photocathodes for RF photoinjectors

NASA Astrophysics Data System (ADS)

Michelato, P.

1997-02-01

Over the past ten years photocathodes have been extensively used as high-brightness electron sources in RF guns. In this paper, I present a general review of the alkali-based high quantum efficiency (QE) photoemitters (e.g. Cs 3Sb, K 2CsSb and Cs 2Te), together with a comparative analysis of the different preparation procedures and the results obtained, both in the preparation chambers and in RF guns. The need to increase the photocathode reliability has provided the impetus to get an R&D activity to go over the alchemy of photocathode preparation procedure. In this paper, I will discuss the results so far obtained in different laboratories, both by using traditional investigation strategy (e.g. QE and RF behavior) and by means of surface science techniques as Auger Electron Spectroscopy (AES) and X-ray Photoelectron Spectroscopy (XPS). Alkali antimonides have been used at first in the RF gun due to the high QE response to the green light of the Nd:YLF second-harmonic radiation. Measurements have confirmed the high reactivity of the alkali antimonide photocathodes to the residual gases: this fact makes their use in RF guns not practical, mainly for short lifetimes. Further investigations have shown that the choice of the substratum preparation procedure and chemical composition plays a fundamental role in the photocathode performance, both from the point of view of the QE and the operative lifetime and ruggedness to gas exposition. Cesium telluride (Cs 2Te) prepared on a molybdenum substratum seems to be, nowadays, the best compromise, in terms of preparation procedure reliability and ruggedness, that now the characteristics and drawbacks of this material are well understood (e.g. the need of an UV laser source). Future possible developments will be discussed. In particular, the measurement and the control of the thermal emittance and the time response could be an important task.

Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe1-x Sb x compounds

NASA Astrophysics Data System (ADS)

Guillou, F.; Pathak, A. K.; Hackett, T. A.; Paudyal, D.; Mudryk, Y.; Pecharsky, V. K.

2017-12-01

Experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R  =  rare-earth, T   =  transition metal and X  =  p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions 0.65 ≤slant x ≤slant 0.9 . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions 0 ≤slant x < 0.65 lead to a strong reduction of the Curie temperature compared to the GdScGe parent, but without affecting the saturation magnetization. With a further increase in Sb content, the first compositions showing the presence of the CeFeSi-type structure of the antimonide, x ≈ 0.7 , coincide with the appearance of an antiferromagnetic phase. The application of a finite magnetic field reveals a jump in magnetization toward a fully saturated ferromagnetic state. This antiferro-ferromagnetic transformation is not associated with a sizeable latent heat, as confirmed by heat capacity measurements. The electronic structure calculations for x = 0.75 indicate that the key factor in the conversion from the ferromagnetic CeScSi-type to the antiferromagnetic CeFeSi-type structure is the disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.

Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe 1–xSb x compounds

DOE PAGES

Guillou, F.; Pathak, A. K.; Hackett, T. A.; ...

2017-11-09

Here, experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R = rare-earth,more » $ T$ = transition metal and X = p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions $$0.65 \\leqslant x \\leqslant 0.9$$ . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions $$0 \\leqslant x < 0.65$$ lead to a strong reduction of the Curie temperature compared to the GdScGe parent, but without affecting the saturation magnetization. With a further increase in Sb content, the first compositions showing the presence of the CeFeSi-type structure of the antimonide, $$x \\approx 0.7$$ , coincide with the appearance of an antiferromagnetic phase. The application of a finite magnetic field reveals a jump in magnetization toward a fully saturated ferromagnetic state. This antiferro–ferromagnetic transformation is not associated with a sizeable latent heat, as confirmed by heat capacity measurements. The electronic structure calculations for $x = 0.75$ indicate that the key factor in the conversion from the ferromagnetic CeScSi-type to the antiferromagnetic CeFeSi-type structure is the disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.« less

Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe 1–xSb x compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guillou, F.; Pathak, A. K.; Hackett, T. A.

Here, experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R = rare-earth,more » $ T$ = transition metal and X = p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions $$0.65 \\leqslant x \\leqslant 0.9$$ . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions $$0 \\leqslant x < 0.65$$ lead to a strong reduction of the Curie temperature compared to the GdScGe parent, but without affecting the saturation magnetization. With a further increase in Sb content, the first compositions showing the presence of the CeFeSi-type structure of the antimonide, $$x \\approx 0.7$$ , coincide with the appearance of an antiferromagnetic phase. The application of a finite magnetic field reveals a jump in magnetization toward a fully saturated ferromagnetic state. This antiferro–ferromagnetic transformation is not associated with a sizeable latent heat, as confirmed by heat capacity measurements. The electronic structure calculations for $x = 0.75$ indicate that the key factor in the conversion from the ferromagnetic CeScSi-type to the antiferromagnetic CeFeSi-type structure is the disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.« less

Spin-orbit coupling effects in indium antimonide quantum well structures

NASA Astrophysics Data System (ADS)

Dedigama, Aruna Ruwan

Indium antimonide (InSb) is a narrow band gap material which has the smallest electron effective mass (0.014m0) and the largest electron Lande g-facture (-51) of all the III-V semiconductors. Spin-orbit effects of III-V semiconductor heterostructures arise from two different inversion asymmetries namely bulk inversion asymmetry (BIA) and structural inversion asymmetry (SIA). BIA is due to the zinc-blende nature of this material which leads to the Dresselhaus spin splitting consisting of both linear and cubic in-plane wave vector terms. As its name implies SIA arises due to the asymmetry of the quantum well structure, this leads to the Rashba spin splitting term which is linear in wave vector. Although InSb has theoretically predicted large Dresselhaus (760 eVA3) and Rashba (523 eA 2) coefficients there has been relatively little experimental investigation of spin-orbit coefficients. Spin-orbit coefficients can be extracted from the beating patterns of Shubnikov--de Haas oscillations (SdH), for material like InSb it is hard to use this method due to the existence of large electron Lande g-facture. Therefore it is essential to use a low field magnetotransport technique such as weak antilocalization to extract spin-orbit parameters for InSb. The main focus of this thesis is to experimentally determine the spin-orbit parameters for both symmetrically and asymmetrically doped InSb/InxAl 1-xSb heterostructures. During this study attempts have been made to tune the Rashba spin-orbit coupling coefficient by using a back gate to change the carrier density of the samples. Dominant phase breaking mechanisms for InSb/InxAl1-xSb heterostructures have been identified by analyzing the temperature dependence of the phase breaking field from weak antilocalization measurements. Finally the strong spin-orbit effects on InSb/InxAl1-xSb heterostructures have been demonstrated with ballistic spin focusing devices.

Cold electron beams from cryocooled, alkali antimonide photocathodes

DOE PAGES

Cultrera, L.; Karkare, S.; Lee, H.; ...

2015-11-30

In this study we report on the generation of cold electron beams using a Cs 3Sb photocathode grown by codeposition of Sb and Cs. By cooling the photocathode to 90 K we demonstrate a significant reduction in the mean transverse energy validating the long-standing speculation that the lattice temperature contributes to limiting the mean transverse energy or intrinsic emittance near the photoemission threshold, opening new frontiers in generating ultrabright beams. At 90 K, we achieve a record low intrinsic emittance of 0.2 μm (rms) per mm of laser spot diameter from an ultrafast (subpicosecond) photocathode with quantum efficiency greater thanmore » 7 × 10 -5 using a visible laser wavelength of 690 nm.« less

Magnetotransport of indium antimonide doped with manganese

NASA Astrophysics Data System (ADS)

Kuzmina, K.; Aronzon, B. A.; Kochura, A. V.; Lashkul, A. V.; Lisunov, K. G.; Lähderanta, E.; Shakhov, M. A.

2014-07-01

Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycrystalline In1-xMnxSb samples with x = 0.02 - 0.06, containing nanosize MnSb precipitates. The relative MR, Δρ/ρ, is positive within the whole range of B= 0 - 10 T and T ~ 20 - 300 K. The Hall resistivity, ρH, exhibits a nonlinear dependence on B up to the room temperature.MR is interpreted with the two-band model, suggesting two types of holes with different concentration and mobility. In addition, analysis of ρH (B, T) is performed by taking into account both the normal and the anomalous contributions. The latter is attributable to the effect of MnSb nanoprecipitates, having the ferromagnetic Curie temperature well above 300 K.

Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sooheyong; Williams, G. Jackson; Campana, Maria I.

Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Finally, using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acousticmore » oscillations at frequencies of several GHz.« less

Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons

DOE PAGES

Lee, Sooheyong; Williams, G. Jackson; Campana, Maria I.; ...

2016-01-11

Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Finally, using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acousticmore » oscillations at frequencies of several GHz.« less

Quartz-enhanced photoacoustic spectroscopy sensor for ethylene detection with a 3.32 μm distributed feedback laser diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen Ba, T.; Triki, M.; Vicet, A., E-mail: a.vicet@univ-montp2.fr

2015-02-15

An antimonide distributed feedback quantum wells diode laser operating at 3.32 μm at near room temperature in the continuous wave regime has been used to perform ethylene detection based on quartz enhanced photoacoustic spectroscopy. An absorption line centered at 3007.52 cm{sup −1} was investigated and a normalized noise equivalent absorption coefficient (1σ) of 3.09 10{sup −7} cm{sup −1} W Hz{sup −1/2} was obtained. The linearity and the stability of the detection have been evaluated. Biological samples’ respiration has been measured to validate the feasibility of the detection setup in an agronomic environment, especially on ripening apples.

Technologies for thermal management of mid-IR Sb-based surface emitting lasers

NASA Astrophysics Data System (ADS)

Perez, J.-P.; Laurain, A.; Cerutti, L.; Sagnes, I.; Garnache, A.

2010-04-01

In this paper, for the first time to our knowledge, we report and demonstrate the technological steps dedicated to thermal management of antimonide-based surface emitting laser devices grown by molecular beam epitaxy. Key points of the technological process are firstly the bonding of the structure on the SiC host substrate and secondly the GaSb substrate removal to leave the Sb-based membrane. The structure design (etch stop layer, metallic mirror, etc), bonding process (metallic bonding via solid-liquid interdiffusion) and GaSb substrate removal process (selective wet-chemical etchants, etc) are presented. Optical characterizations together with external-cavity VCSEL laser emission at 2.3 µm at room temperature in continuous wave are presented.

Improved radial segregation via the destabilizing vertical Bridgman configuration

NASA Astrophysics Data System (ADS)

Sonda, Paul; Yeckel, Andrew; Daoutidis, Prodromos; Derby, Jeffrey J.

2004-01-01

We employ a computational model to revisit the classic crystal growth experiments conducted by Kim et al. (J. Electrochem. Soc. 119 (1972) 1218) and Müller et al. (J. Crystal Growth 70 (1984) 78), which were among the first to clearly document the effects of flow transitions on segregation. Analysis of the growth of tellerium-doped indium antimonide within a destabilizing vertical Bridgman configuration reveals the existence of multiple states, each of which can be reached by feasible paths of process operation. Transient growth simulations conducted on the different solution branches reveal striking differences in hydrodynamic and segregation behavior. We show that crystals grown in the destabilizing configuration exhibit considerably better radial segregation than those grown in the stabilizing configuration, a result which challenges conventional wisdom and practice.

Copper Antimonide Nanowire Array Lithium Ion Anodes Stabilized by Electrolyte Additives.

PubMed

Jackson, Everett D; Prieto, Amy L

2016-11-09

Nanowires of electrochemically active electrode materials for lithium ion batteries represent a unique system that allows for intensive investigations of surface phenomena. In particular, highly ordered nanowire arrays produced by electrodeposition into anodic aluminum oxide templates can lead to new insights into a material's electrochemical performance by providing a high-surface-area electrode with negligible volume expansion induced pulverization. Here we show that for the Li-Cu x Sb ternary system, stabilizing the surface chemistry is the most critical factor for promoting long electrode life. The resulting solid electrolyte interphase is analyzed using a mix of electron microscopy, X-ray photoelectron spectroscopy, and lithium ion battery half-cell testing to provide a better understanding of the importance of electrolyte composition on this multicomponent alloy anode material.

InAs/GaSb type-II superlattice infrared detectors: Future prospect

NASA Astrophysics Data System (ADS)

Rogalski, A.; Martyniuk, P.; Kopytko, M.

2017-09-01

Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall (SRH) lifetime are equal. InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cut-off wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in SRH lifetimes. It is predicted that since the future infrared (IR) systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long SRH lifetime will be required. Since T2SLs are very much resisted in attempts to improve its SRH lifetime, currently the only material that meets this requirement is HgCdTe. Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability—the so-called "ibility" advantages.

Photocathodes for High Repetition Rate Light Sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ben-Zvi, Ilan

2014-04-20

This proposal brought together teams at Brookhaven National Laboratory (BNL), Lawrence Berkeley National Laboratory (LBNL) and Stony Brook University (SBU) to study photocathodes for high repetition rate light sources such as Free Electron Lasers (FEL) and Energy Recovery Linacs (ERL). Below details the Principal Investigators and contact information. Each PI submits separately for a budget through his corresponding institute. The work done under this grant comprises a comprehensive program on critical aspects of the production of the electron beams needed for future user facilities. Our program pioneered in situ and in operando diagnostics for alkali antimonide growth. The focus ismore » on development of photocathodes for high repetition rate Free Electron Lasers (FELs) and Energy Recovery Linacs (ERLs), including testing SRF photoguns, both normal-­conducting and superconducting. Teams from BNL, LBNL and Stony Brook University (SBU) led this research, and coordinated their work over a range of topics. The work leveraged a robust infrastructure of existing facilities and the support was used for carrying out the research at these facilities. The program concentrated in three areas: a) Physics and chemistry of alkali-­antimonide cathodes (BNL – LBNL) b) Development and testing of a diamond amplifier for photocathodes (SBU -­ BNL) c) Tests of both cathodes in superconducting RF photoguns (SBU) and copper RF photoguns (LBNL) Our work made extensive use of synchrotron radiation materials science techniques, such as powder-­ and single-­crystal diffraction, x-­ray fluorescence, EXAFS and variable energy XPS. BNL and LBNL have many complementary facilities at the two light sources associated with these laboratories (NSLS and ALS, respectively); use of these will be a major thrust of our program and bring our understanding of these complex materials to a new level. In addition, CHESS at Cornell will be used to continue seamlessly throughout the NSLS dark period and new diffraction facilities at ALS will be utilized. We also will continue to make use of the excellent analytical facilities at the CNF (BNL) and the Molecular Foundry (LBNL), where we have access to state of the art UHV XPS, SPM, SEM and scanning Auger microscopy.« less

Ultrasensitive detection of nitric oxide at 5.33 μm by using external cavity quantum cascade laser-based Faraday rotation spectroscopy

PubMed Central

Lewicki, Rafał; Doty, James H.; Curl, Robert F.; Tittel, Frank K.; Wysocki, Gerard

2009-01-01

A transportable prototype Faraday rotation spectroscopic system based on a tunable external cavity quantum cascade laser has been developed for ultrasensitive detection of nitric oxide (NO). A broadly tunable laser source allows targeting the optimum Q3/2(3/2) molecular transition at 1875.81 cm−1 of the NO fundamental band. For an active optical path of 44 cm and 1-s lock-in time constant minimum NO detection limits (1σ) of 4.3 parts per billion by volume (ppbv) and 0.38 ppbv are obtained by using a thermoelectrically cooled mercury–cadmium–telluride photodetector and liquid nitrogen-cooled indium–antimonide photodetector, respectively. Laboratory performance evaluation and results of continuous, unattended monitoring of atmospheric NO concentration levels are reported. PMID:19625625

Infrared Imagery of Shuttle (IRIS). Task 2, summary report

NASA Technical Reports Server (NTRS)

Chocol, C. J.

1978-01-01

End-to-end tests of a 16 element indium antimonide sensor array and 10 channels of associated electronic signal processing were completed. Quantitative data were gathered on system responsivity, frequency response, noise, stray capacitance effects, and sensor paralleling. These tests verify that the temperature accuracies, predicted in the Task 1 study, can be obtained with a very carefully designed electro-optical flight system. Pre-flight and inflight calibration of a high quality are mandatory to obtain these accuracies. Also, optical crosstalk in the array-dewar assembly must be carefully eliminated by its design. Tests of the scaled up tracking system reticle also demonstrate that the predicted tracking system accuracies can be met in the flight system. In addition, improvements in the reticle pattern and electronics are possible, which will reduce the complexity of the flight system and increase tracking accuracy.

High performance infrared fast cooled detectors for missile applications

NASA Astrophysics Data System (ADS)

Reibel, Yann; Espuno, Laurent; Taalat, Rachid; Sultan, Ahmad; Cassaigne, Pierre; Matallah, Noura

2016-05-01

SOFRADIR was selected in the late 90's for the production of 320×256 MW detectors for major European missile programs. This experience has established our company as a key player in the field of missile programs. SOFRADIR has since developed a vast portfolio of lightweight, compact and high performance JT-based solutions for missiles. ALTAN is a 384x288 Mid Wave infrared detector with 15μm pixel pitch, and is offered in a miniature ultra-fast Joule- Thomson cooled Dewar. Since Sofradir offers both Indium Antimonide (InSb) and Mercury Cadmium Telluride technologies (MCT), we are able to deliver the detectors best suited to customers' needs. In this paper we are discussing different figures of merit for very compact and innovative JT-cooled detectors and are highlighting the challenges for infrared detection technologies.

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Nguyen, Jean; Rafol, Sir B.; Liao, Anna; Hoeglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Mumolo, Jason M.; Liu, John; Ting, David Z.-Y.;

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Nguyen, Jean; Rafol, Sir B.; Liao, Anna; Hoeglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Mumolo, Jason M.; Liu, John; Ting, David Z.-Y.;

Gapped electronic structure of epitaxial stanene on InSb(111)

DOE PAGES

Xu, Cai-Zhi; Chan, Yang-Hao; Chen, Peng; ...

2018-01-11

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement withmore » our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.« less

Gapped electronic structure of epitaxial stanene on InSb(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Cai-Zhi; Chan, Yang-Hao; Chen, Peng

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement withmore » our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.« less

The effects of electron and proton radiation on GaSb infrared solar cells

NASA Technical Reports Server (NTRS)

Gruenbaum, P. E.; Avery, J. E.; Fraas, L. M.

1991-01-01

Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).

Experimental determination and numerical modelling of solid liquid interface shapes for vertical Bridgman grown GaSb crystals

NASA Astrophysics Data System (ADS)

Boiton, P.; Giacometti, N.; Santailler, J. L.; Duffar, T.; Nabot, J. P.

1998-11-01

A facility, based on a profiled resistive heater, has been designed for the growth of antimonide crystals (GaSb, InSb) by the vertical Bridgman method. Solid-liquid interface shapes during the growth of 2-in diameter crystals are marked by means of variations of the pulling rate and are revealed by chemical etching. The comparison with the calculated interface shapes, obtained using a finite element method, gives a satisfactory agreement. It is shown that the heat transfer and consequently the interface shapes are greatly influenced by the crucible assembly. For example, small spacings around the crucible or slots in the crucible holder can change the interface curvature from convex to concave. From numerical simulations it is also shown that convection in the melt flattens the interface but that an increase of the pulling rate has the reverse effect.

Laser system for natural gas detection. Phase 1: Laboratory feasibility studies

NASA Technical Reports Server (NTRS)

Grant, W. B.; Hinkley, E. D., Jr.

1982-01-01

This project demonstrated the feasibility of using laser remote sensing technology as a tool for leak survey work in natural gas distribution systems. A laboratory device was assembled using a pair of helium neon (HeNe) lasers to measure methane. One HeNe laser emits radiation at a wavelength of 3.3922 micrometers, which corresponds to a strong absorption feature of methane, while the other emits radiation at a wavelength of 3.3911 micrometers, which corresponds to a weak absorption by methane. As a particular area is scanned for leaks, the laser is pointed at convenient topographic targets within its operating range, about 25 m. A portion of the backscattered radiation is collected by a receiver and focused onto an indium antimonide (InSb) photodetector, cooled to 77K. Methane concentrations were determined from the differential absorption at the two wavelengths for the backscattered radiation.

Effect of Sb thickness on the performance of bialkali-antimonide photocathodes

DOE PAGES

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Hernandez-Garcia, Carlos; ...

2016-01-06

The alkali species Cs and K were codeposited using an effusion source, onto relatively thick layers of Sb (50 nm to ~7 μm) grown on GaAs and Ta substrates inside a vacuum chamber that was baked and not-vented, and also baked and vented with clean dry nitrogen but not rebaked. The characteristics of the Sb films, including sticking probability, surface roughness, grain size, and crystal properties were very different for these conditions, yet comparable values of photocathode yield [or quantum efficiency (QE)] at 284 V were obtained following codeposition of the alkali materials. Photocathodes manufactured with comparatively thick Sb layersmore » exhibited the highest QE and the best 1/e lifetime. As last, the authors speculate that the alkali codeposition enabled optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali materials.« less

Visible and infrared linear detector arrays for the Airborne Visible/Infrared Imaging Spectrometer (AVIRIS)

NASA Technical Reports Server (NTRS)

Bailey, Gary C.

1987-01-01

The Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) instrument uses four separate focal plane assemblies consisting of line array detectors that are multiplexed to a common J-FET preamp using a FET switch multiplexing (MUX) technique. A 32-element silicon line array covers the spectral range from 0.41 to 0.70 microns. Three additional 64-element indium antimonide (InSb) line arrays cover the spectral range from 0.68 to 2.45 microns. The spectral sampling interval per detector element is nominally 9.8 nm, giving a total of 224 spectral channels. All focal planes operate at liquid nitrogen temperature and are housed in separate dewars. Electrical performance characteristics include a read noise of less than 1000 e(-) in all channels, response and dark nonuniformity of 5 percent peak to peak, and quantum efficiency of greater than 60 percent.

Indium antimonide crystal growth experiment M562. [Skylab weightless conditions

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Witt, A. F.

1974-01-01

It was established that ideal diffusion controlled steady state conditions, never accomplished on earth, were achieved during the growth of Te-doped InSb crystals in Skylab. Surface tension effects led to nonwetting conditions under which free surface solidification took place in confined geometry. It was further found that, under forced contact conditions, surface tension effects led to the formation of surface ridges (not previously observed on earth) which isolated the growth system from its container. In addition, it was possible, for the first time, to identify unambiguously: the origin of segregation discontinuities associated with facet growth, the mode of nucleation and propagation of rotational twin boundaries, and the specific effect of mechanical-shock perturbations on segregation. The results obtained prove the advantageous conditions provided by outer space. Thus, fundamental data on solidification thought to be unattainable because of gravity-induced interference on earth are now within reach.

Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells

NASA Astrophysics Data System (ADS)

Maros, Aymeric

III-V multijunction solar cells have demonstrated record efficiencies with the best device currently at 46 % under concentration. Dilute nitride materials such as GaInNAsSb have been identified as a prime choice for the development of high efficiency, monolithic and lattice-matched multijunction solar cells as they can be lattice-matched to both GaAs and Ge substrates. These types of cells have demonstrated efficiencies of 44% for terrestrial concentrators, and with their upright configuration, they are a direct drop-in product for today's space and concentrator solar panels. The work presented in this dissertation has focused on the development of relatively novel dilute nitride antimonide (GaNAsSb) materials and solar cells using plasma-assisted molecular beam epitaxy, along with the modeling and characterization of single- and multijunction solar cells. Nitrogen-free ternary compounds such as GaInAs and GaAsSb were investigated first in order to understand their structural and optical properties prior to introducing nitrogen. The formation of extended defects and the resulting strain relaxation in these lattice-mismatched materials is investigated through extensive structural characterization. Temperature- and power-dependent photoluminescence revealed an inhomogeneous distribution of Sb in GaAsSb films, leading to carrier localization effects at low temperatures. Tuning of the growth parameters was shown to suppress these Sb-induced localized states. The introduction of nitrogen was then considered and the growth process was optimized to obtain high quality GaNAsSb films lattice-matched to GaAs. Near 1-eV single-junction GaNAsSb solar cells were produced. The best devices used a p-n heterojunction configuration and demonstrated a current density of 20.8 mA/cm2, a fill factor of 64 % and an open-circuit voltage of 0.39 V, corresponding to a bandgap-voltage offset of 0.57 V, comparable with the state-of-the-art for this type of solar cells. Post-growth annealing was found to be essential to improve Voc but was also found to degrade the material quality of the top layers. Alternatives are discussed to improve this process. Unintentional high background doping was identified as the main factor limiting the device performance. The use of Bi-surfactant mediated growth is proposed for the first time for this material system to reduce this background doping and preliminary results are presented.

Technology Development of Miniaturized Far-Infrared Sources for Biomolecular Spectroscopy

NASA Technical Reports Server (NTRS)

Kono, Junichiro

2003-01-01

The objective of this project was to develop a purely solid-state based, thus miniaturized, far-infrared (FIR) (also known as terahertz (THz)) wave source using III-V semiconductor nanostructures for biomolecular detection and sensing. Many biomolecules, such as DNA and proteins, have distinct spectroscopic features in the FIR wavelength range as a result of vibration-rotation-tunneling motions and various inter- and intra-molecule collective motions. Spectroscopic characterization of such molecules requires narrow linewidth, sufficiently high power, tunable (in wavelength), and coherent FIR sources. Unfortunately, the FIR frequency is one of the least technologically developed ranges in the electromagnetic spectrum. Currently available FIR sources based on non-solid state technology are bulky, inefficient, and very often incoherent. In this project we investigated antimonide based compound semiconductor (ABCS) nanostructures as the active medium to generate FIR radiation. The final goal of this project was to demonstrate a semiconductor THz source integrated with a pumping diode laser module to achieve a compact system for biomolecular applications.

Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vurgaftman, I.; Belenky, G., E-mail: gregory.belenky@stonybrook.edu; Lin, Y.

The absorption spectra for the antimonide-based type-II superlattices (SLs) for detection in the long-wave infrared (LWIR) are calculated and compared to the measured data for SLs and bulk materials with the same energy gap (HgCdTe and InAsSb). We include the results for the metamorphic InAsSb{sub x}/InAsSb{sub y} SLs with small periods as well as the more conventional strain-balanced InAs/Ga(In)Sb and InAs/InAsSb SLs on GaSb substrates. The absorption strength in small-period metamorphic SLs is similar to the bulk materials, while the SLs with an average lattice constant matched to GaSb have significantly lower absorption. This is because the electron-hole overlap inmore » the strain-balanced type-II LWIR SLs occurs primarily in the hole well, which constitutes a relatively small fraction of the total thickness.« less

Thermal oxidation of single crystal aluminum antimonide and materials having the same

DOEpatents

Sherohman, John William; Yee, Jick Hong; Coombs, III, Arthur William; Wu, Kuang Jen J.

2012-12-25

In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.

Tandem concentrator photovoltaic array applied to Space Station Freedom evolutionary power requirements

NASA Technical Reports Server (NTRS)

Fisher, Edward M., Jr.

1991-01-01

Additional power is required to support Space Station Freedom (SSF) evolution. Boeing Defense and Space Group, LeRC, and Entech Corporation have participated in the development of efficiency gallium arsenide and gallium antimonide solar cells make up the solar array tandem cell stacks. Entech's Mini-Dome Fresnel Lens Concentrators focus solar energy onto the active area of the solar cells at 50 times one solar energy flux. Development testing for a flight array, to be launched in Nov. 1992 is under way with support from LeRC. The tandem cells, interconnect wiring, concentrator lenses, and structure were integrated into arrays subjected to environmental testing. A tandem concentrator array can provide high mass and area specific power and can provide equal power with significantly less array area and weight than the baseline array design. Alternatively, for SSF growth, an array of twice the baseline power can be designed which still has a smaller drag area than the baseline.

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Nguyen, Jean; Khoshakhlagh, Arezou; Rafol, Sir B.; Hoeglund, Linda; Keo, Sam A.; Mumolo, Jason M.; Liu, John; Liao, Anna; Ting, David Z.-Y.;

Andreev molecules in semiconductor nanowire double quantum dots.

PubMed

Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

2017-09-19

Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor.

PubMed

Yu, Xuechao; Yu, Peng; Wu, Di; Singh, Bahadur; Zeng, Qingsheng; Lin, Hsin; Zhou, Wu; Lin, Junhao; Suenaga, Kazu; Liu, Zheng; Wang, Qi Jie

2018-04-18

The interest in mid-infrared technologies surrounds plenty of important optoelectronic applications ranging from optical communications, biomedical imaging to night vision cameras, and so on. Although narrow bandgap semiconductors, such as Mercury Cadmium Telluride and Indium Antimonide, and quantum superlattices based on inter-subband transitions in wide bandgap semiconductors, have been employed for mid-infrared applications, it remains a daunting challenge to search for other materials that possess suitable bandgaps in this wavelength range. Here, we demonstrate experimentally for the first time that two-dimensional (2D) atomically thin PtSe 2 has a variable bandgap in the mid-infrared via layer and defect engineering. Here, we show that bilayer PtSe 2 combined with defects modulation possesses strong light absorption in the mid-infrared region, and we realize a mid-infrared photoconductive detector operating in a broadband mid-infrared range. Our results pave the way for atomically thin 2D noble metal dichalcogenides to be employed in high-performance mid-infrared optoelectronic devices.

Strain-balanced Indium Arsenide-Indium Arsenic Antimonide Type-II Superlattices on Gallium Antimonide Substrates for Infrared Photodetector Applications

NASA Astrophysics Data System (ADS)

Steenbergen, Elizabeth H.

Infrared photodetectors, used in applications for sensing and imaging, such as military target recognition, chemical/gas detection, and night vision enhancement, are predominantly comprised of an expensive II-VI material, HgCdTe. III-V type-II superlattices (SLs) have been studied as viable alternatives for HgCdTe due to the SL advantages over HgCdTe: greater control of the alloy composition, resulting in more uniform materials and cutoff wavelengths across the wafer; stronger bonds and structural stability; less expensive substrates, i.e., GaSb; mature III-V growth and processing technologies; lower band-to-band tunneling due to larger electron effective masses; and reduced Auger recombination enabling operation at higher temperatures and longer wavelengths. However, the dark current of InAs/Ga1-xInxSb SL detectors is higher than that of HgCdTe detectors and limited by Shockley-Read-Hall (SRH) recombination rather than Auger recombination. This dissertation work focuses on InAs/InAs1-xSbx SLs, another promising alternative for infrared laser and detector applications due to possible lower SRH recombination and the absence of gallium, which simplifies the SL interfaces and growth processes. InAs/InAs1-xSbx SLs strain-balanced to GaSb substrates were designed for the mid- and long-wavelength infrared (MWIR and LWIR) spectral ranges and were grown using MOCVD and MBE by various groups. Detailed characterization using high-resolution x-ray diffraction, atomic force microscopy, photoluminescence (PL), and photoconductance revealed the excellent structural and optical properties of the MBE materials. Two key material parameters were studied in detail: the valence band offset (VBO) and minority carrier lifetime. The VBO between InAs and InAs 1-xSbx strained on GaSb with x = 0.28--0.41 was best described by Qv = DeltaEv/DeltaE g = 1.75 +/- 0.03. Time-resolved PL experiments on a LWIR SL revealed a lifetime of 412 ns at 77 K, one order of magnitude greater than that of InAs/Ga1-xInxSb LWIR SLs due to less SRH recombination. MWIR SLs also had 100's of ns lifetimes that were dominated by radiative recombination due to shorter periods and larger wave function overlaps. These results allow InAs/InAs1-xSbx SLs to be designed for LWIR photodetectors with minority carrier lifetimes approaching those of HgCdTe, lower dark currents, and higher operating temperatures.

Mid-infrared multiple quantum well lasers using digitally-grown aluminum indium arsenic antimonide barriers and strained indium arsenic antimonide wells

NASA Astrophysics Data System (ADS)

Vaughn, Leslie G.

2006-04-01

AlxIn(1-x)AsySb(1-y) quaternary alloys have been used in Type I midwave infrared (MWIR) laser structures as barrier materials with InAs and InAsSb quantum wells. However, growth of these alloys has limited the application because of a large miscibility gap. In this research, quaternary films with compositions well into the miscibility gap (0 ≤ x ≤ 0.50) have been grown for the first time by molecular beam epitaxy (MBE) using a digital alloy technique. These films, lattice-matched to GaSb, have been characterized using double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM), and photoluminescence (PL). Results indicate uniform, single-phase, and highly crystalline films. Using PL data, the dependence of the quaternary bandgap on composition has been studied and fit to various theoretical models. Combining the quaternary bandgap equation with strain and quantum size effects, the wavelengths for strained InAsSb wells in AlInAsSb quaternary barriers are predicted and compared to measured values generated from PL experiments. The reasonable agreement of these experimental results with the theoretical model supports the assertion that the AlInAsSb/InAsSb material system is Type I and emits in the target wavelength range of 3.3-4.2 mum. PL spectra of AlInAsSb/InAsSb multiple quantum wells exhibit a substantial increase in intensity with increasing quaternary aluminum content. This is presumably due to increasing valence band offset and, therefore, to better hole confinement. A laser with this active region has been fabricated and tested. Under pulsed optical pumping conditions at 50K, the laser emitted light at ˜3.93 mum. Further work has been done using the digital alloy technique to add gallium to the quaternary alloy to produce an AlGaInAsSb quinary alloy lattice-matched to GaSb. This material is of specific interest for mid-infrared lasers because by adding the fifth element, gallium, the range of material properties is extended. There is some indication from PL testing that the addition of the fifth element may contribute to Auger recombination suppression and may lead to higher operating temperatures. DCXRD and TEM of these quinary alloys give results similar to the quaternary alloys. The stable, single-phase growth of these quinary alloys shows promise for improving the performance of MWIR lasers.

Electronic structure of rare-earth chromium antimonides RECrSb{sub 3} (RE=La-Nd, Sm, Gd-Dy, Yb) by X-ray photoelectron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crerar, Shane J.; Mar, Arthur, E-mail: arthur.mar@ualberta.ca; Grosvenor, Andrew P.

The electronic structure of the ternary rare-earth chromium antimonides RECrSb{sub 3} (RE=La-Nd, Sm, Gd-Dy, Yb) has been examined by high-resolution X-ray photoelectron spectroscopy (XPS) for the first time. The RE 3d or 4d core-line spectra are substantially complicated by the presence of satellite peaks but their general resemblance to those of RE{sub 2}O{sub 3} tends to support the presence of trivalent RE atoms in RECrSb{sub 3}. However, the Yb 4d spectrum of YbCrSb{sub 3} also shows peaks that are characteristic of divalent ytterbium. The Cr 2p core-line spectra exhibit asymmetric lineshapes and little change in binding energy (BE) relative tomore » Cr metal, providing strong evidence for electronic delocalization. The Sb 3d core-line spectra reveal slightly negative BE shifts relative to elemental antimony, supporting the presence of anionic Sb species in RECrSb{sub 3}. The experimental valence band spectrum of LaCrSb{sub 3} matches well with the calculated density of states, and it can be fitted to component peaks belonging to individual atoms to yield an average formulation that agrees well with expectations ('La{sup 3+}Cr{sup 3+}(Sb{sup 2-}){sub 3}'). On progressing from LaCrSb{sub 3} to NdCrSb{sub 3}, the 4f-band in the valence band spectra grows in intensity and shifts to higher BE. The valence band spectrum for YbCrSb{sub 3} also supports the presence of divalent ytterbium. - Graphical Abstract: In their valence band spectra, the 4f-band intensifies and shifts to higher BE on progressing from LaCrSb{sub 3} to NdCrSb{sub 3}. Highlights: Black-Right-Pointing-Pointer High-resolution core-line and valence band XPS spectra were measured for RECrSb{sub 3}. Black-Right-Pointing-Pointer Divalent Yb is present in YbCrSb{sub 3}, in contrast to trivalent RE in other members. Black-Right-Pointing-Pointer Asymmetric Cr 2p spectral lineshape confirms delocalization of Cr valence electrons. Black-Right-Pointing-Pointer Small negative Sb 3d BE shifts support assignment of anionic Sb atoms. Black-Right-Pointing-Pointer Fitted valence band spectra show shifts in the 4f band as RE is changed.« less

Geochemistry and mineralogy of Pd in the magnetitite layer within the upper gabbro of the Mesoarchean Nuasahi Massif (Orissa, India)

NASA Astrophysics Data System (ADS)

Prichard, Hazel M.; Mondal, Sisir K.; Mukherjee, Ria; Fisher, Peter C.; Giles, Nicolas

2018-04-01

Palladium concentrations of 1-3 ppm with an average Pt/Pd ratio of 0.15 have been located for the first time in a magnetitite layer in the Nuasahi Massif in Orissa India. This layer occurs at a high stratigraphic level in the complex and is nearly 4-km long and 5-12-m thick. The sections of the Pd-rich zone identified to date extend over a distance of 1 km at the southern end of the layer. Several phases of mineralization are evident. The first, primary assemblage of platinum-group minerals (PGM) contains Pd-sulfides (vysotskite), Pd-Pb alloys (zvyagintsevite), and a Pd-In alloy, a mineral probably new to mineralogy. These PGM are confined to central magnetite grains in the magnetitites. The magnetite grains with exsolved fine laths of ilmenite at centers are referred to as central magnetite grains. These central magnetite grains are commonly surrounded by blebs of ilmenite and magnetite that contain the majority of the PGM. These are dominated by Pd-antimonides, variably altered to Pd-oxides, and other PGM including PtAs2 (sperrylite), RuS2 (laurite), and IrRhAsS (irarsite/hollingwothite). Many of these PGM also occur in the interstitial silicates, with rare occurrences in the central magnetite grains. We propose that the platinum-group elements (PGE) crystallized during a minor sulfide saturation event that occurred as the magnetitites crystallized. This event produced the minor Cu-sulfides in these magnetitites. Later introduction of antimony and arsenic, during the alteration event that produced the blebby ilmenite and magnetite, led to the more primary PGM being succeeded by the main PGM assemblage, dominated by Pd-antimonides. These are associated with secondary Cu minerals and sperrylite. Subsequent oxidation during weathering in the hot wet Indian climate produced the Pd-oxides. The Nuasahi Massif is a sill-like Archean layered ultramafic-mafic intrusion genetically linked to high-Mg siliceous basalt or boninites and is characterized by unusually thick layers of chromitite. PGE are concentrated in these chromitites and in the base metal sulfide-bearing breccias in the overlying gabbro. The Pd in the magnetitites described here indicates the presence of a third level where PGE are concentrated and a magma that crystallized to produce PGE concentrations at three stratigraphic levels in the massif. This indicates that similar thin sill-like intrusions, hosting unusually thick chromitites, may also have PGE concentrations at a number of stratigraphic levels.

Low temperature solution synthesis of zinc antimonide, manganese antimonide, and strontium ruthenate compounds

NASA Astrophysics Data System (ADS)

Noblitt, Jennifer Lenkner

2011-12-01

Increasing energy demands are fueling research in the area of renewable energy and energy storage. In particular, Li-ion batteries and superconducting wires are attractive choices for energy storage. Improving safety, simplifying manufacturing processes, and advancing technology to increase energy storage capacity is necessary to compete with current marketed energy storage devices. These advancements are accomplished through the study of new materials and new morphologies. Increasing dependence on and rising demand for portable electronic devices has continued to drive research in the area of Li-ion batteries. In order to compete with existing batteries and be applicable to future energy needs such as powering hybrid vehicles, the drawbacks of Li-ion batteries must be addressed including (i) low power density, (ii) safety, and (iii) high manufacturing costs. These drawbacks can be addressed through new materials and morphologies for the anode, cathode, and electrolyte. New intermetallic anode materials such as ZnSb, MnSb, and Mn2Sb are attractive candidates to replace graphite, the current industry standard anode material, because they are safer while maintaining comparable theoretical capacity. Electrodeposition is an inexpensive method that could be used for the synthesis of these electrode materials. Direct electrodeposition allows for excellent electrical contact to the current collector without the use of a binder. To successfully electrodeposit zinc and manganese antimonides, metal precursors with excellent solubility in water were needed. To promote solubility, particularly for the antimony precursor, coordinating ligands were added to the deposition bath solutions. This work shows that the choice of coordinating ligand and metal-ligand speciation can alter both the electrochemistry and the film composition. This work focuses on the search for appropriate coordinating ligands, solution pH, and bath temperatures so that high quality films of ZnSb, MnSb, and Mn2Sb may be electrochemically deposited on a conducting substrate. Increasing use of natural resources for energy generation has driven research in the area of energy storage using superconducting materials. To meet energy storage needs the materials must have the following features: (i) safety, (ii) superconductivity at or above liquid nitrogen temperature (77 K), (iii) low cost manufacturing processes, and (iv) robustness. The search for materials that meet all of these criteria is on-going, specifically in the area of high temperature superconductivity. The precise mechanism of superconductivity is not known. A few theories explain some of the phenomenological aspects, but not all. In order to logically select and synthesize high temperature superconductors for industrial applications, the precise mechanism must first be elucidated. Additionally, a synthetic method that yields pure, high quality crystals is required because transition temperatures have been shown to vary depending on the preparation method due to impurities. Before measuring properties of superconductors, the development of a synthesis method that yields pure, high quality crystals is required. Most superconductors are synthesized using traditional solid state methods. This synthesis route precludes formation of kinetically stable phases. Low temperature synthesis is useful for probing thermodynamic verses kinetic stability of compounds as well as producing high quality single crystals. A novel low temperature hydrothermal synthesis of Sr-Ru-O compounds has been developed. These materials are important because of their interesting properties including superconductivity and ferromagnetism. Sr2RuO4 is particularly interesting as it is superconducting and isostructural to La2CuO 4, which is only superconducting when doped. Therefore, Sr2RuO 4 is a good choice for study of the mechanism of superconductivity. Additionally, new kinetically stable phases of the Sr-Ru-O family may be formed which may also be superconducting. Sr-Ru-O compounds were previously synthesized via the float zone method. There is one report of using hydrothermal synthesis, but the temperatures used were 480--630 °C. In general, hydrothermal methods are advantageous because of the potential for moderate temperatures and pressures to be used. Additionally, the reaction temperature, precursor choice, and reaction time can all be used to tune the composition and morphology of the product. Hydrothermal methods are inexpensive and a one-step synthesis which is very convenient to scale up for industrial application. This work shows how a hydrothermal method at temperatures between 140 °C and 210 °C was developed for the synthesis of the Sr-Ru-O family of compounds.

Ab-initio study of dilute nitride substitutional and split-interstitial impurities in gallium antimonide (N-GaSb)

NASA Astrophysics Data System (ADS)

Jadaun, Priyamvada; Nair, Hari P.; Bank, Seth R.; Banerjee, Sanjay K.

2012-02-01

We present an ab-initio density functinal theory study of dilute-nitride GaSb. Adding dilute quantities of nitrogen causes rapid reduction in bandgap of GaSb (˜300 meV for 2% N). Due to this rapid reduction in bandgap, dilute-nitrides provide a pathway for extending the emission of GaSb based type-I diode lasers into the mid-infrared wavelength region (3-5 micron). In this study we look at the effect of substitutional N impurity on the electronic properties of our system and compare it with the band-anticrossing model, a phenomenological model, which has been used to explain giant band bowing observed in dilute-nitride alloys. We also study the effect of Sb-N split interstitials which are known to be non-radiative recombination centers. Furthermore we also discuss the stability of the Sb-N split interstitial relative to substitutional nitrogen to determine if the split interstitials can be annihilated using post-growth annealing to improve the radiative lifetime of the material which essential for laser operation.

Superlattice infrared photodetector research at the Jet Propulsion Laboratory

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Ting, D. Z.; Rafol, S. B.; Soibel, A.; Khoshakhlagh, A.; Hill, C. J.; Höglund, L.; Keo, S. A.; Liu, J. K.; Mumolo, J. M.; Luong, E. M.; Fisher, A.

2015-08-01

III-V semiconductors offer a highly effective platform for the development of sophisticated heterostructure-based MWIR and LWIR detectors, as exemplified by the high-performance double heterstructure (DH) nBn, XBn, and type- II superlattice infrared detectors. A key enabling design element is the unipolar barrier, which is used to implement the complementary barrier infra-red detector (CBIRD) design for increasing the collection efficiency of photogenerated carriers, and reducing dark current generation without impeding photocurrent flow. Heterostructure superlattice detectors that make effective use of unipolar barriers have demonstrated strong reduction of generationrecombination (G-R) dark current due to Shockley-Read-Hall (SRH) processes. In the last several years we solely focused on the development of antimonide based IR detectors. Recently, we demonstrated RoA values over 14,000 Ohm cm2 for a 9.9 μm cutoff device by incorporating electron-blocking and hole-blocking unipolar barriers. This device has shown 300K BLIP operation with f/2 optics at 87 K with blackbody * of 1.1x1011 cm Hz1/2/W.

Superlattice Barrier Infrared Detector Development at the Jet Propulsion Laboratory

NASA Technical Reports Server (NTRS)

Ting, David Z.; Soibel, Alexander; Rafol, Sir B.; Nguyen, Jean; Hoglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Liu, John K.; Mumolo, Jason M.

2011-01-01

We report recent efforts in achieving state-of-the-art performance in type-II superlattice based infrared photodetectors using the barrier infrared detector architecture. We used photoluminescence measurements for evaluating detector material and studied the influence of the material quality on the intensity of the photoluminescence. We performed direct noise measurements of the superlattice detectors and demonstrated that while intrinsic 1/f noise is absent in superlattice heterodiode, side-wall leakage current can become a source of strong frequency-dependent noise. We developed an effective dry etching process for these complex antimonide-based superlattices that enabled us to fabricate single pixel devices as well as large format focal plane arrays. We describe the demonstration of a 1024x1024 pixel long-wavelength infrared focal plane array based the complementary barrier infrared detector (CBIRD) design. An 11.5 micron cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 ?m cutoff focal plane array are also presented.

Concentration and structure inhomogeneities in GaSb(Si) single crystals grown at different heat and mass transfer conditions

NASA Astrophysics Data System (ADS)

Serebryakov, Yu. A.; Prokhorov, I. A.; Vlasov, V. N.; Korobeynikova, E. N.; Zakharov, B. G.; Shul'pina, I. L.; Marchenko, M. P.; Fryazinov, I. V.

2007-06-01

Results of ground-based experiments on crystallization of gallium antimonide on the POLIZON facility carried out within the framework of space experiment preparation aboard FOTON satellite are submitted. Technical and technological opportunities of suppression of disturbing factors for improvement of quality of grown crystals in space are substantiated. Features of formation of concentration and structure inhomogeneities in GaSb:Si crystals grown under non-stationary and stationary convection conditions are investigated. Experimental data about structure and dopant distribution inhomogeneities are discussed taking into account results of numerical researches of GaSb:Si crystallization. Also earlier received results of modeling of GaSb:Te crystallization under close temperature conditions are used. Correlation between computational and experimental data is shown. The data on intensity of flows close to crystallization front are received at which non-stationary or stationary conditions of crystallization are realized. The forecast for space conditions is made. The influence of a rotating magnetic field on convection in melt for application in space experiment projected is investigated.

Synthesis and Optimization of Thermoelectric Properties of Zn(x)Sb3

NASA Technical Reports Server (NTRS)

Doan-Nguyen, Vicky V.

2005-01-01

High-performance thermoelectric materials are studied to investigate their abilities to optimize electrical and minimize thermal conductivities. A stoichiometric range of p-type zinc antimonide compounds was synthesized to analyze the trends in their thermoelectric properties. Zn(x)Sb3 (x=3.80, 3.85, 3.90, 3.95, 4.00, 4.05, 4.10) was reacted at 750 C and annealed at 300 C for 24 hours at each temperature. Electronic transport properties such as Seebeck and Hall Effect were measured to analyze possible trends in the set of compositions. SEM, EDS, and XRD were used to quantify both ingots and hot-pressed samples to confirm that they were single-phase and of the expected stoichiometries. Recent SEM data indicated that Zn(3.90)Sb3 and Zn(4.00)Sb3 samples were actually Zn3Sb2. In hopes of further improving the figure-of-merit (ZT) of the binary system, V, Cr, Mn, Fe, Co, In, and Sn were used to dope (Zn(0.95)M(0.05))(3.95)Sb3.

Thermally tunable broadband terahertz metamaterials with negative refractive index

NASA Astrophysics Data System (ADS)

Li, Weili; Meng, Qinglong; Huang, Renshuai; Zhong, Zheqiang; Zhang, Bin

2018-04-01

A thermally tunable broadband metamaterials with negative refractive index (NRI) is investigated in terahertz (THz) region theoretically. The metamaterials is designed by fabricating two stand-up opposite L shape metallic structures on fused quartz substrate, and the indium antimonide (InSb) is filled in the bottom gap of the two L shape structures. The tunability is attributed to the InSb because the InSb can changes the capacitance of the gap area by adjusting the temperature. The transmission characteristics and the retrieved electromagnetic parameters of the metamaterials are analyzed. Results indicate that the resonant frequency and amplitude modulation of the metamaterials can be tuned continuously in broadband range (about 0.62 THz), and the phase modulation from - 2 to 3 rad is also achieved within broadband range (about 0.8 THz). In addition, the metamaterials shows dual-band NRI behaviors at 0 . 4- 0 . 9 THz and 1 . 06- 1 . 15 THz when the temperature increases to 400 K. The wedge-shaped prism simulations are implemented to verify the NRI characteristics and indicate that the NRI of the metamaterials can be achieved.

Universality of modular symmetries in two-dimensional magnetotransport

NASA Astrophysics Data System (ADS)

Olsen, K. S.; Limseth, H. S.; Lütken, C. A.

2018-01-01

We analyze experimental quantum Hall data from a wide range of different materials, including semiconducting heterojunctions, thin films, surface layers, graphene, mercury telluride, bismuth antimonide, and black phosphorus. The fact that these materials have little in common, except that charge transport is effectively two-dimensional, shows how robust and universal the quantum Hall phenomenon is. The scaling and fixed point data we analyzed appear to show that magnetotransport in two dimensions is governed by a small number of universality classes that are classified by modular symmetries, which are infinite discrete symmetries not previously seen in nature. The Hall plateaux are (infrared) stable fixed points of the scaling-flow, and quantum critical points (where the wave function is delocalized) are unstable fixed points of scaling. Modular symmetries are so rigid that they in some cases fix the global geometry of the scaling flow, and therefore predict the exact location of quantum critical points, as well as the shape of flow lines anywhere in the phase diagram. We show that most available experimental quantum Hall scaling data are in good agreement with these predictions.

Technology to Establish a Factory for High QE Alkali Antimonide Photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schultheiss, Thomas

2015-11-16

Intense electron beams are key to a large number of scientific endeavors, including electron cooling of hadron beams, electron-positron colliders, secondary-particle beams such as photons and positrons, sub-picosecond ultrafast electron diffraction (UED), and new high gradient accelerators that use electron-driven plasmas. The last decade has seen a considerable interest in pursuit and realization of novel light sources such as Free Electron Lasers [1] and Energy Recovery Linacs [2] that promise to deliver unprecedented quality x-ray beams. Many applications for high-intensity electron beams have arisen in recent years in high-energy physics, nuclear physics and energy sciences, such as recent designs formore » an electron-hadron collider at CERN (LHeC) [3], and beam coolers for hadron beams at LHC and eRHIC [4,5]. Photoinjectors are used at the majority of high-brightness electron linacs today, due to their efficiency, timing structure flexibility and ability to produce high power, high brightness beams. The performance of light source machines is strongly related to the brightness of the electron beam used for generating the x-rays. The brightness of the electron beam itself is mainly limited by the physical processes by which electrons are generated. For laser based photoemission sources this limit is ultimately related to the properties of photocathodes [6]. Most facilities are required to expend significant manpower and money to achieve a workable, albeit often non-ideal, compromise photocathode solution. If entirely fabricated in-house, the photocathode growth process itself is laborious and not always reproducible: it involves the human element while requiring close adherence to recipes and extremely strict control of deposition parameters. Lack of growth reliability and as a consequence, slow adoption of viable photoemitter types, can be partly attributed to the absence of any centralized facility or commercial entity to routinely provide high peak current capable, low emittance, visible-light sensitive photocathodes to the myriad of source systems in use and under development. Successful adoption of photocathodes requires strict adherence to proper fabrication, operation, and maintenance methodologies, necessitating specialized knowledge and skills. Key issues include the choice of photoemitter material, development of a more streamlined growth process to minimize human operator uncertainties, accommodation of varying photoemitter substrate materials and geometries, efficient transport and insertion mechanisms preserving the photo-yield, and properly conveyed photoemitter operational and maintenance methodologies. AES, in collaboration with Cornell University in a Phase I STTR, developed an on-demand industrialized growth and centralized delivery system for high-brightness photocathodes focused upon the alkali antimonide photoemitters. To the end user, future photoemitter sourcing will become as simple as other readily available consumables, rather than a research project requiring large investments in time and personnel.« less

Muon spin relaxation and rotation studies of the filled skutterudite alloys praseodymium osmium ruthenium antimonide and praseodymium lanthanum osmium antimonide

NASA Astrophysics Data System (ADS)

Shu, Lei

Some filled skutterudite compounds have recently been found to exhibit very interesting properties. The first Pr-based heavy-fermion superconductor, PrOs4Sb12, is an intriguing material due to the unusual properties of both its normal and superconducting states. Comprehensive muon spin rotation and relaxation studies and magnetic susceptibility measurements, described in this dissertation, have been performed to investigate the microscopic properties of PrOs4Sb12 and its Ru and La doped alloys. The temperature dependence of penetration depth measured in the vortex state of PrOs4Sb12 using transverse-field muon spin rotation (TF-muSR) is weaker than those measured by radiofrequency measurements. A scenario based on two-band superconductivity in PrOs4Sb 12, is proposed to resolve this difference. TF-muSR experiments also suggest the suppression of superfluid density with Ru doping, probably due to impurity scattering. In addition, magnetic susceptibility data as well as analysis of the muSR data in PrOs4Sb12 reveal a nearly linear relation of mu+ Knight shift vs. magnetic susceptibility. This suggests that the muon charge does not affect the crystalline electric field splitting of Pr3+ near neighbors. Additional evidence comes from the fact that the superconducting transition temperature Tc measured from muSR is consistent with the bulk superconducting values. Zero-field muon spin relaxation (ZF-muSR) experiments have been carried out in the Pr(Os1-xRux) 4Sb12 and Pr1-yLayOs 4Sb12 alloy systems to investigate the time-reversal symmetry (TRS) breaking found in an earlier ZF-muSR study of the end compound PrOs 4Sb12. The results from measurements at KEK, Japan, suggest that Ru doping is considerably more efficient than La doping in suppressing TRS breaking superconducting in PrOs4Sb12. However, we think that the spontaneous local field that indicates TRS breaking detected by ZF-muSR may depend on sample quality if those fields are from inhomogeneity in the superconducting order parameter, since our ZF-muSR experiment detects nonzero spontaneous fields for Pr(Os0.9Ru0.1)4 Sb12 from measurement at ISIS, United Kingdom in different samples. Longitudinal-field muon spin relaxation experiments also have been carried out to elucidate the anomalous dynamic muon spin relaxation detected by ZF-muSR in those alloys. The dynamic muon relaxation found in the alloys appears to be due to 141Pr nuclear spin fluctuations, where the 141Pr moments are enhanced by hyperfine coupling to the Pr 3+ Van Vleck susceptibility.

Space infrared telescope facility wide field and diffraction limited array camera (IRAC)

NASA Technical Reports Server (NTRS)

Fazio, Giovanni G.

1988-01-01

The wide-field and diffraction limited array camera (IRAC) is capable of two-dimensional photometry in either a wide-field or diffraction-limited mode over the wavelength range from 2 to 30 microns with a possible extension to 120 microns. A low-doped indium antimonide detector was developed for 1.8 to 5.0 microns, detectors were tested and optimized for the entire 1.8 to 30 micron range, beamsplitters were developed and tested for the 1.8 to 30 micron range, and tradeoff studies of the camera's optical system performed. Data are presented on the performance of InSb, Si:In, Si:Ga, and Si:Sb array detectors bumpbonded to a multiplexed CMOS readout chip of the source-follower type at SIRTF operating backgrounds (equal to or less than 1 x 10 to the 8th ph/sq cm/sec) and temperature (4 to 12 K). Some results at higher temperatures are also presented for comparison to SIRTF temperature results. Data are also presented on the performance of IRAC beamsplitters at room temperature at both 0 and 45 deg angle of incidence and on the performance of the all-reflecting optical system baselined for the camera.

Platinum-group elements fractionation by selective complexing, the Os, Ir, Ru, Rh-arsenide-sulfide systems above 1020 °C

NASA Astrophysics Data System (ADS)

Helmy, Hassan M.; Bragagni, Alessandro

2017-11-01

The platinum-group element (PGE) contents in magmatic ores and rocks are normally in the low μg/g (even in the ng/g) level, yet they form discrete platinum-group mineral (PGM) phases. IPGE (Os, Ir, Ru) + Rh form alloys, sulfides, and sulfarsenides while Pt and Pd form arsenides, tellurides, bismuthoids and antimonides. We experimentally investigate the behavior of Os, Ru, Ir and Rh in As-bearing sulfide system between 1300 and 1020 °C and show that the prominent mineralogical difference between IPGE (+Rh) and Pt and Pd reflects different chemical preference in the sulfide melt. At temperatures above 1200 °C, Os shows a tendency to form alloys. Ruthenium forms a sulfide (laurite RuS2) while Ir and Rh form sulfarsenides (irarsite IrAsS and hollingworthite RhAsS, respectively). The chemical preference of PGE is selective: IPGE + Rh form metal-metal, metal-S and metal-AsS complexes while Pt and Pd form semimetal complexes. Selective complexing followed by mechanical separation of IPGE (and Rh)-ligand from Pt- and Pd-ligand associations lead to PGE fractionation.

Structurally complex Zintl compounds for high temperature thermoelectric power generation

NASA Astrophysics Data System (ADS)

Zevalkink, Alexandra; Pomrehn, Gregory; Gibbs, Zachary; Snyder, Jeffrey

2014-03-01

Zintl phases, characterized by covalently-bonded substructures surrounded by highly electropositive cations, exhibit many of the characteristics desired for thermoelectric applications. Recently, we demonstrated promising thermoelectric performance (zT values between 0.4 and 0.9) in a class of Zintl antimonides that share a common structural motif: anionic moieties resembling infinite chains of linked tetrahedra. These compounds (A5M2 Sb6 and A3 M Sb3 compounds where A = Ca or Sr and M = Al, Ga and In) crystallize as four distinct, but closely related chain-forming structure types. Their large unit cells lead to exceptionally low lattice thermal conductivity due to the containment of heat in low velocity optical phonon modes. Here, we show that chemical substitutions on the A and M sites can be used to control the electronic and thermal transport properties and optimize the thermoelectric figure of merit. Doping with alio-valent elements allows for rational control of the carrier concentration, while isoelectronic substitutions can be used to fine-tune the intrinsic properties. A combination of Density Functional calculations and classical transport models was used to explain the experimentally observed transport properties of these compounds.

Thermoelectricity in correlated narrow-gap semiconductors

NASA Astrophysics Data System (ADS)

Tomczak, Jan M.

2018-05-01

We review many-body effects, their microscopic origin, as well as their impact on thermoelectricity in correlated narrow-gap semiconductors. Members of this class—such as FeSi and FeSb2—display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie–Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators—such as Ce3Bi4Pt3 for which we present new results—and propose a general classification of paramagnetic insulators. From the latter, FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we explore new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.

High-efficiency solar-thermophotovoltaic system equipped with a monolithic planar selective absorber/emitter

NASA Astrophysics Data System (ADS)

Shimizu, Makoto; Kohiyama, Asaka; Yugami, Hiroo

2015-01-01

We demonstrate a high-efficiency solar-thermophotovoltaic system (STPV) using a monolithic, planar, and spectrally selective absorber/emitter. A complete STPV system using gallium antimonide (GaSb) cells was designed and fabricated to conduct power generation tests. To produce a high-efficiency STPV, it is important to match the thermal radiation spectrum with the sensitive region of the GaSb cells. Therefore, to reach high temperatures with low incident power, a planar absorber/emitter is incorporated for controlling the thermal radiation spectrum. This multilayer coating consists of thin-film tungsten sandwiched by yttria-stabilized zirconia. The system efficiency is estimated to be 16% when accounting for the optical properties of the fabricated absorber/emitter. Power generation tests using a high-concentration solar simulator show that the absorber/emitter temperature peaks at 1640 K with an incident power density of 45 W/cm2, which can be easily obtained by low-cost optics such as Fresnel lenses. The conversion efficiency became 23%, exceeding the Shockley-Queisser limit for GaSb, with a bandgap of 0.67 eV. Furthermore, a total system efficiency of 8% was obtained with the view factor between the emitter and the cell assumed to be 1.

Next decade in infrared detectors

NASA Astrophysics Data System (ADS)

Rogalski, A.

2017-10-01

Fundamental and technological issues associated with the development and exploitation of the most advanced infrared technologies is discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices (T2SLs), barrier detectors, quantum wells, extrinsic detectors, and uncooled thermal bolometers. The sophisticated physics associated with the antimonide-based bandgap engineering will give a new impact and interest in development of infrared detector structures. Important advantage of T2SLs is the high quality, high uniformity and stable nature of the material. In general, III-V semiconductors are more robust than their II-VI counterparts due to stronger, less ionic chemical bonding. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability - the so-called "ibility" advantages. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. The microbolometer detectors are now produced in larger volumes than all other IR array technologies together. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VOx) or amorphous silicon (a-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement.

Application of infrared fiber optic imaging in atherosclerotic plaques

NASA Astrophysics Data System (ADS)

Guo, Bujin; Casscells, S. W.; Bearman, Gregory H.; McNatt, Janice; Naghevi, Morteza; Malik, Basit A.; Gul, Khawar; Willerson, James T.

1999-07-01

Rupture of atherosclerotic plaques - the main cause of heart attach and stokes - is not predictable. Hence even treadmill stress tests fail to detect many persons at risk. Fatal plaques are found at autopsies to be associated with active inflammatory cells. Classically, inflammation is detected by its swelling, red color, pain and heat. We have found that heat accurately locates the dangerous plaques that are significantly warmer then atherosclerotic plaques without the same inflammation. In order to develop a non-surgical method of locating these plaques, an IR fiber optic imaging system has been developed in our laboratory to evalute the causes and effect of heat in atherosclerotic plaques. The fiber optical imagin bundle consists of 900 individual As2S3 chalcogenide glass fibers which transmit IR radiation from 0.7 micrometers 7 micrometers with little energy loss. By combining that with a highly sensitive Indium Antimonide IR focal plane array detector, we are able to obtain thermal graphic images in situ. The temperature heterogeneity of atherosclerotic plaques developed in the arteral of the experimental animal models is under study with the new device. The preliminary experimental results from the animal model are encouraging. The potential of using this new technology in diagnostic evaluation of the vulnerable atherosclerotic plaques is considerable.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Castaño-González, E.-E.; Seña, N.; Mendoza-Estrada, V.

In this paper, we carried out first-principles calculations in order to investigate the structural and electronic properties of the binary compound gallium antimonide (GaSb). This theoretical study was carried out using the Density Functional Theory within the plane-wave pseudopotential method. The effects of exchange and correlation (XC) were treated using the functional Local Density Approximation (LDA), generalized gradient approximation (GGA): Perdew–Burke–Ernzerhof (PBE), Perdew-Burke-Ernzerhof revised for solids (PBEsol), Perdew-Wang91 (PW91), revised Perdew–Burke–Ernzerhof (rPBE), Armiento–Mattson 2005 (AM05) and meta-generalized gradient approximation (meta-GGA): Tao–Perdew–Staroverov–Scuseria (TPSS) and revised Tao–Perdew–Staroverov–Scuseria (RTPSS) and modified Becke-Johnson (MBJ). We calculated the densities of state (DOS) and band structuremore » with different XC potentials identified and compared them with the theoretical and experimental results reported in the literature. It was discovered that functional: LDA, PBEsol, AM05 and RTPSS provide the best results to calculate the lattice parameters (a) and bulk modulus (B{sub 0}); while for the cohesive energy (E{sub coh}), functional: AM05, RTPSS and PW91 are closer to the values obtained experimentally. The MBJ, Rtpss and AM05 values found for the band gap energy is slightly underestimated with those values reported experimentally.« less

Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature.

PubMed

Alam, Khan; Foley, Andrew; Smith, Arthur R

2015-03-11

In advanced compound semiconductor devices, such as in quantum dot and quantum well systems, detailed atomic configurations at the growth surfaces are vital in determining the structural and electronic properties. Therefore, it is important to investigate the surface reconstructions in order to make further technological advancements. Usually, conventional semiconductor surfaces (e.g., arsenides, phosphides, and antimonides) are highly reactive due to the existence of a high density of group V (anion) surface dangling bonds. However, in the case of nitrides, group III rich growth conditions in molecular beam epitaxy are usually preferred leading to group III (Ga)-rich surfaces. Here, we use low-temperature scanning tunneling microscopy to reveal a uniform distribution of native gallium adatoms with a density of 0.3%-0.5% of a monolayer on the clean, as-grown surface of nitrogen polar GaN(0001̅) having the centered 6 × 12 reconstruction. Unseen at room temperature, these Ga adatoms are strongly bound to the surface but move with an extremely low surface diffusion barrier and a high density saturation coverage in thermodynamic equilibrium with Ga droplets. Furthermore, the Ga adatoms reveal an intrinsic surface chirality and an asymmetric site occupation. These observations can have important impacts in the understanding of gallium nitride surfaces.

Impacts of propagating, frustrated and surface modes on radiative, electrical and thermal losses in nanoscale-gap thermophotovoltaic power generators.

PubMed

Bernardi, Michael P; Dupré, Olivier; Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe; Francoeur, Mathieu

2015-06-26

The impacts of radiative, electrical and thermal losses on the performances of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten radiator, dominated by frustrated modes, only for a vacuum gap thickness of 10 nm and if both electrical and thermal losses are neglected. The key limiting factors for the Drude- and tungsten-based devices are respectively the recombination of electron-hole pairs at the cell surface and thermalization of radiation with energy larger than the cell absorption bandgap. A design guideline is also proposed where a high energy cutoff above which radiation has a net negative effect on nano-TPV power output due to thermal losses is determined. It is shown that the power output of a tungsten-based device increases by 6.5% while the cell temperature decreases by 30 K when applying a high energy cutoff at 1.45 eV. This work demonstrates that design and optimization of nano-TPV devices must account for radiative, electrical and thermal losses.

Impacts of propagating, frustrated and surface modes on radiative, electrical and thermal losses in nanoscale-gap thermophotovoltaic power generators

PubMed Central

Bernardi, Michael P.; Dupré, Olivier; Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe; Francoeur, Mathieu

2015-01-01

The impacts of radiative, electrical and thermal losses on the performances of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten radiator, dominated by frustrated modes, only for a vacuum gap thickness of 10 nm and if both electrical and thermal losses are neglected. The key limiting factors for the Drude- and tungsten-based devices are respectively the recombination of electron-hole pairs at the cell surface and thermalization of radiation with energy larger than the cell absorption bandgap. A design guideline is also proposed where a high energy cutoff above which radiation has a net negative effect on nano-TPV power output due to thermal losses is determined. It is shown that the power output of a tungsten-based device increases by 6.5% while the cell temperature decreases by 30 K when applying a high energy cutoff at 1.45 eV. This work demonstrates that design and optimization of nano-TPV devices must account for radiative, electrical and thermal losses. PMID:26112658

Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnS b2

NASA Astrophysics Data System (ADS)

Yi, Changjiang; Yang, Shuai; Yang, Meng; Wang, Le; Matsushita, Yoshitaka; Miao, Shanshan; Jiao, Yuanyuan; Cheng, Jinguang; Li, Yongqing; Yamaura, Kazunari; Shi, Youguo; Luo, Jianlin

2017-11-01

Single crystals of EuMnS b2 were successfully grown and their structural and electronic properties were investigated systematically. The material crystallizes in an orthorhombic-layered structure (space group: Pnma, No. 62) comprising a periodic sequence of -MnSb/Eu/Sb/Eu/- layers (˜1 nm in thickness), and massless fermions are expected to emerge in the Sb layer, by analogy of the candidate Dirac materials EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi). The magnetic and specific heat measurements of EuMnS b2 suggest an antiferromagnetic ordering of Eu moments near 20 K. A characteristic hump appears in the temperature-dependent electrical resistivity curve at ˜25 K . A spin-flop transition of Eu moments with an onset magnetic field of ˜15 kOe (at 2 K) was observed. Interestingly, EuMnS b2 shows a negative magnetoresistance (up to -95 % ) in contrast to the positive magnetoresistances observed for EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi), providing a unique opportunity to study the correlation between electronic and magnetic properties in this class of materials.

Clementine mission

NASA Astrophysics Data System (ADS)

Rustan, Pedro L.

1995-01-01

The U.S. Department of Defense (DoD) and the National Aeronautics and Space Administration (NASA) started a cooperative program in 1992 to flight qualify recently developed lightweight technologies in a radiation stressed environment. The spacecraft, referred to as Clementine, was designed, built, and launched in less than a two year period. The spacecraft was launched into a high inclination orbit from Vandenburg Air Force Base in California on a Titan IIG launch vehicle in January 1994. The spacecraft was injected into a 420 by 3000 km orbit around the Moon and remained there for over two months. Unfortunately, after successfully completing the Lunar phase of the mission, a software malfunction prevented the accomplishment of the near-Earth asteroid (NEA) phase. Some of the technologies incorporated in the Clementine spacecraft include: a 370 gram, 7 watt star tracker camera; a 500 gram, 6 watt, UV/Vis camera; a 1600 gram, 30 watt Indium Antimonide focal plane array NIR camera; a 1650 gram, 30 watt, Mercury Cadmium Telluride LWIR camera; a LIDAR camera which consists of a Nd:YAG diode pumped laser for ranging and an intensified photocathode charge-coupled detector for imaging. The scientific results of the mission will be first analyzed by a NASA selected team, and then will be available to the entire community.

Terahertz plasmon-induced transparency based on asymmetric dual-disk resonators coupled to a semiconductor InSb waveguide and its biosensor application

NASA Astrophysics Data System (ADS)

Shahamat, Yadollah; Vahedi, Mohammad

2017-06-01

An ultracompact double eight-shaped plasmonic structure for the realization of plasmon-induced transparency (PIT) in the terahertz (THz) region has been studied. The device consists of a semiconductor-insulator-semiconductor bus waveguide coupled to the dual-disk resonators. Indium antimonide is employed to excite SPP in the THz region. The transmission characteristics of the proposed device are simulated numerically by the finite-difference time-domain method. In addition, a theoretical analysis based on the coupled-mode theory for transmission features is presented and compared with the numerical results. Results are in good agreement. Also, the dependence of PIT frequency characteristics on the radius of the outer disk is discussed in detail. In addition, by removing one of the outer disk resonators, double-PIT peaks can be observed in the transmission spectrum, and the physical mechanism of the appeared peaks is investigated. Finally, an application of the proposed structure for distinguishing different states of DNA molecules is discussed. Results show that the maximum sensitivity with 654 GHz/RIU-1 could be obtained for a single PIT structure. The frequency shifts equal to 37 and 99 GHz could be observed for the denatured and the hybridized DNA states, respectively.

OPS laser EPI design for different wavelengths

NASA Astrophysics Data System (ADS)

Moloney, J. V.; Hader, J.; Li, H.; Kaneda, Y.; Wang, T. S.; Yarborough, M.; Koch, S. W.; Stolz, W.; Kunert, B.; Bueckers, C.; Chaterjee, S.; Hardesty, G.

2009-02-01

Design of optimized semiconductor optically-pumped semiconductor lasers (OPSLs) depends on many ingredients starting from the quantum wells, barrier and cladding layers all the way through to the resonant-periodic gain (RPG) and high reflectivity Bragg mirror (DBR) making up the OPSL active mirror. Accurate growth of the individual layers making up the RPG region is critical if performance degradation due to cavity misalignment is to be avoided. Optimization of the RPG+DBR structure requires knowledge of the heat generation and heating sinking of the active mirror. Nonlinear Control Strategies SimuLaseTM software, based on rigorous many-body calculations of the semiconductor optical response, allows for quantum well and barrier optimization by correlating low intensity photoluminescence spectra computed for the design, with direct experimentally measured wafer-level edge and surface PL spectra. Consequently, an OPSL device optimization procedure ideally requires a direct iterative interaction between designer and grower. In this article, we discuss the application of the many-body microscopic approach to OPSL devices lasing at 850nm, 1040nm and 2μm. The latter device involves and application of the many-body approach to mid-IR OPSLs based on antimonide materials. Finally we will present results on based on structural modifications of the epitaxial structure and/or novel material combinations that offer the potential to extend OPSL technology to new wavelength ranges.

Detector Dewar cooler assemblies trade-off with equipment needs: a key issue for cost reduction

NASA Astrophysics Data System (ADS)

Chatard, Jean-Pierre

1996-06-01

Low cost equipment is the universal motto with the decrease in military budgets. A large panoply exists to solve partially this problem, such as simplification of the process, industrialization and the use of a collective manufacturing concept; but this is not enough. In the field of IRFPA using Mercury Cadmium Telluride (MCT), Sofradir has spent a lot of time in order to develop a very simple process to ensure producibility which has been totally demonstrated today. The production of more than 25 complex IRFPA per month has also allowed us to industrialize the process. A key factor is quantities. Today the only solution to increase quantities is to standardize detectors but in the field of IRFPA it is not so easy because each imaging system is specific. One solution to decrease the cost is to obtain the best trade-off between the application and the technology. As an example, people focus on indium antimonide staring array detectors today as they consider them as less expensive than other cooled infrared detector technologies. This is just because people focus on the FPA only, not on the global cost of the equipment. It will be demonstrated in this paper that MCT is a material so flexible that it is possible to obtain InSb detector performance at a higher temperature which allows decreased cost, volume and weight of the infrared equipment.

Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predan, Felix, E-mail: felix.predan@ise.fraunhofer.de; Reinwand, Dirk; Cariou, Romain

The authors present a low-temperature wafer bonding process for the formation of electrically conductive n-GaSb/n-Ga{sub 0.79}In{sub 0.21}As and n-GaSb/n-Ga{sub 0.32}In{sub 0.68}P heterojunctions. The surfaces are deoxidized by sputter-etching with an argon-beam and bonded in ultrahigh vacuum. The sputtering behavior was investigated for each material, revealing a distinct selective sputtering characteristic for Ga{sub 0.32}In{sub 0.68}P. According to these findings, the settings for the bonding process were chosen. The mechanical and electrical properties of the wafer bonds were studied. Fully bonded 2 in. wafer pairs were found for both material combinations exhibiting high bond energies, which are comparable to the binding energiesmore » in the semiconductors. Furthermore, bond resistances below 5 mΩ cm{sup 2} could be reached, which are in the range of the lowest resistances that have been reported for wafer bonded heterojunctions. This speaks, together with the high bond energies, for a high amount of covalent bonds at the interfaces. These promising bond characteristics make the integration of antimonides with arsenides or phosphides by wafer bonding attractive for various optoelectronic applications such as multijunction solar cells.« less

Quantized Majorana conductance

NASA Astrophysics Data System (ADS)

Zhang, Hao; Liu, Chun-Xiao; Gazibegovic, Sasa; Xu, Di; Logan, John A.; Wang, Guanzhong; van Loo, Nick; Bommer, Jouri D. S.; de Moor, Michiel W. A.; Car, Diana; Op Het Veld, Roy L. M.; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Pendharkar, Mihir; Pennachio, Daniel J.; Shojaei, Borzoyeh; Lee, Joon Sue; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.; Sarma, S. Das; Kouwenhoven, Leo P.

2018-04-01

Majorana zero-modes—a type of localized quasiparticle—hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool for identifying the presence of Majorana zero-modes, for instance as a zero-bias peak in differential conductance. The height of the Majorana zero-bias peak is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature (where e is the charge of an electron and h is the Planck constant), as a direct consequence of the famous Majorana symmetry in which a particle is its own antiparticle. The Majorana symmetry protects the quantization against disorder, interactions and variations in the tunnel coupling. Previous experiments, however, have mostly shown zero-bias peaks much smaller than 2e2/h, with a recent observation of a peak height close to 2e2/h. Here we report a quantized conductance plateau at 2e2/h in the zero-bias conductance measured in indium antimonide semiconductor nanowires covered with an aluminium superconducting shell. The height of our zero-bias peak remains constant despite changing parameters such as the magnetic field and tunnel coupling, indicating that it is a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins by investigating its robustness to electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of Majorana zero-modes in the system, consequently paving the way for future braiding experiments that could lead to topological quantum computing.

InAs/GaSb type-II superlattice infrared detectors: three decades of development

NASA Astrophysics Data System (ADS)

Rogalski, A.; Kopytko, M.; Martyniuk, P.

2017-02-01

Recently, there has been considerable progress towards III-V antimonide-based low dimensional solids development and device design innovations. From a physics point of view, the type-II InAs/GaSb superlattice is an extremely attractive proposition. Their development results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe FPAs at reasonable cost and theoretical predictions of lower Auger recombination for type-II superlattice (T2SL) detectors compared to HgCdTe. Lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall lifetime are equal. Based on these promising results it is obvious now that the InAs/GaSb superlattice technology is competing with HgCdTe third generation detector technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing. Comments to the statement whether the superlattice IR photodetectors can outperform the "bulk" narrow gap HgCdTe detectors is one of the most important questions for the future of IR photodetectors presented by Rogalski at the April 2006 SPIE meeting in Orlando, Florida, are more credible today and are presented in this paper. It concerns the trade-offs between two most competing IR material technologies: InAs/GaSb type-II superlattices and HgCdTe ternary alloy system.

GaSb and Ga1-xInxSb Thermophotovoltaic Cells using Diffused Junction Technology in Bulk Substrates

NASA Astrophysics Data System (ADS)

Dutta, P. S.; Borrego, J. M.; Ehsani, H.; Rajagopalan, G.; Bhat, I. B.; Gutmann, R. J.; Nichols, G.; Baldasaro, P. F.

2003-01-01

This paper presents results of experimental and theoretical research on antimonide- based thermophotovoltaic (TPV) materials and cells. The topics discussed include: growth of large diameter ternary GaInSb bulk crystals, substrate preparation, diffused junction processes, cell fabrication and characterization, and, cell modeling. Ternary GaInSb boules up to 2 inches in diameter have been grown using the vertical Bridgman technique with a novel self solute feeding technique. A single step diffusion process followed by precise etching of the diffused layer has been developed to obtain a diffusion profile appropriate for high efficiency, p-n junction GaSb and GaInSb thermophotovoltaic cells. The optimum junction depth to obtain the highest quantum efficiency and open circuit voltage has been identified based on diffusion lengths (or minority carrier lifetimes), carrier mobility and experimental diffused impurity profiles. Theoretical assessment of the performance of ternary (GaInSb) and binary (GaSb) cells fabricated by Zn diffusion in bulk substrates has been performed using PC-1D one-dimensional computer simulations. Several factors affecting the cell performances such as the effects of emitter doping profile, emitter thickness and recombination mechanisms (Auger, radiative and Shockley-Read-Hall), the advantages of surface passivation and the impact of dark current due to the metallic grid will be discussed. The conditions needed for diffused junction cells on ternary and binary substrates to achieve similar performance to the epitaxially grown lattice- matched quaternary cells are identified.

Fast, High-Precision Readout Circuit for Detector Arrays

NASA Technical Reports Server (NTRS)

Rider, David M.; Hancock, Bruce R.; Key, Richard W.; Cunningham, Thomas J.; Wrigley, Chris J.; Seshadri, Suresh; Sander, Stanley P.; Blavier, Jean-Francois L.

2013-01-01

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

Neuromorphic infrared focal plane performs sensor fusion on-plane local-contrast-enhancement spatial and temporal filtering

NASA Astrophysics Data System (ADS)

Massie, Mark A.; Woolaway, James T., II; Curzan, Jon P.; McCarley, Paul L.

1993-08-01

An infrared focal plane has been simulated, designed and fabricated which mimics the form and function of the vertebrate retina. The `Neuromorphic' focal plane has the capability of performing pixel-based sensor fusion and real-time local contrast enhancement, much like the response of the human eye. The device makes use of an indium antimonide detector array with a 3 - 5 micrometers spectral response, and a switched capacitor resistive network to compute a real-time 2D spatial average. This device permits the summation of other sensor outputs to be combined on-chip with the infrared detections of the focal plane itself. The resulting real-time analog processed information thus represents the combined information of many sensors with the advantage that analog spatial and temporal signal processing is performed at the focal plane. A Gaussian subtraction method is used to produce the pixel output which when displayed produces an image with enhanced edges, representing spatial and temporal derivatives in the scene. The spatial and temporal responses of the device are tunable during operation, permitting the operator to `peak up' the response of the array to spatial and temporally varying signals. Such an array adapts to ambient illumination conditions without loss of detection performance. This paper reviews the Neuromorphic infrared focal plane from initial operational simulations to detailed design characteristics, and concludes with a presentation of preliminary operational data for the device as well as videotaped imagery.

Quantized Majorana conductance.

PubMed

Zhang, Hao; Liu, Chun-Xiao; Gazibegovic, Sasa; Xu, Di; Logan, John A; Wang, Guanzhong; van Loo, Nick; Bommer, Jouri D S; de Moor, Michiel W A; Car, Diana; Op Het Veld, Roy L M; van Veldhoven, Petrus J; Koelling, Sebastian; Verheijen, Marcel A; Pendharkar, Mihir; Pennachio, Daniel J; Shojaei, Borzoyeh; Lee, Joon Sue; Palmstrøm, Chris J; Bakkers, Erik P A M; Sarma, S Das; Kouwenhoven, Leo P

2018-04-05

Majorana zero-modes-a type of localized quasiparticle-hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool for identifying the presence of Majorana zero-modes, for instance as a zero-bias peak in differential conductance. The height of the Majorana zero-bias peak is predicted to be quantized at the universal conductance value of 2e 2 /h at zero temperature (where e is the charge of an electron and h is the Planck constant), as a direct consequence of the famous Majorana symmetry in which a particle is its own antiparticle. The Majorana symmetry protects the quantization against disorder, interactions and variations in the tunnel coupling. Previous experiments, however, have mostly shown zero-bias peaks much smaller than 2e 2 /h, with a recent observation of a peak height close to 2e 2 /h. Here we report a quantized conductance plateau at 2e 2 /h in the zero-bias conductance measured in indium antimonide semiconductor nanowires covered with an aluminium superconducting shell. The height of our zero-bias peak remains constant despite changing parameters such as the magnetic field and tunnel coupling, indicating that it is a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins by investigating its robustness to electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of Majorana zero-modes in the system, consequently paving the way for future braiding experiments that could lead to topological quantum computing.

Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

2000-01-01

The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

NASA Astrophysics Data System (ADS)

Grenouillet, L.; Duvaut, P.; Olivier, N.; Gilet, P.; Grosse, P.; Poncet, S.; Philippe, P.; Pougeoise, E.; Fulbert, L.; Chelnokov, A.

2006-07-01

In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being operated at high frequencies, their low threshold current and their low beam divergence. Such devices emitting in this wavelength range have been demonstrated using different materials such as strained GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8, 9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE). In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could therefore benefit to future new sources for photonics on silicon applications. In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.

Large disparity between gallium and antimony self-diffusion in gallium antimonide.

PubMed

Bracht, H; Nicols, S P; Walukiewicz, W; Silveira, J P; Briones, F; Haller, E E

2000-11-02

The most fundamental mass transport process in solids is self-diffusion. The motion of host-lattice ('self-') atoms in solids is mediated by point defects such as vacancies or interstitial atoms, whose formation and migration enthalpies determine the kinetics of this thermally activated process. Self-diffusion studies also contribute to the understanding of the diffusion of impurities, and a quantitative understanding of self- and foreign-atom diffusion in semiconductors is central to the development of advanced electronic devices. In the past few years, self-diffusion studies have been performed successfully with isotopically controlled semiconductor heterostructures of germanium, silicon, gallium arsenide and gallium phosphide. Self-diffusion studies with isotopically controlled GaAs and GaP have been restricted to Ga self-diffusion, as only Ga has two stable isotopes, 69Ga and 71Ga. Here we report self-diffusion studies with an isotopically controlled multilayer structure of crystalline GaSb. Two stable isotopes exist for both Ga and Sb, allowing the simultaneous study of diffusion on both sublattices. Our experiments show that near the melting temperature, Ga diffuses more rapidly than Sb by over three orders of magnitude. This surprisingly large difference in atomic mobility requires a physical explanation going beyond standard diffusion models. Combining our data for Ga and Sb diffusion with related results for foreign-atom diffusion in GaSb (refs 8, 9), we conclude that the unusually slow Sb diffusion in GaSb is a consequence of reactions between defects on the Ga and Sb sublattices, which suppress the defects that are required for Sb diffusion.

Effects of the workplace on fertility and related reproductive outcomes.

PubMed Central

Baranski, B

1993-01-01

This report reviews the recent literature on the adverse effects of occupational factors on fertility and related reproductive outcomes. Few studies fulfill the criteria of good study design because of small sample size, insensitive measures of effect, selection, recall, and observation bias, weak if any control of confounding factors, bad definition of exposure, inability to analyze a dose-response relationship, and inadequate statistical analysis. The high prevalence of unsuccessful reproductive outcomes in the general population makes the design of human fertility studies difficult. Although a number of publications indicate that certain occupational factors and settings adversely affect both male and female fertility, it is virtually impossible to estimate the proportion of infertility due to occupational factors in the general population. The collected data suggest that the exposure to the following substances or occupational settings may affect a function of male genital system, leading to sperm abnormalities, hyperestrogenism, impotence, infertility, and/or increased spontaneous abortion rate in wives of exposed workers: alkylmercury, antimonide, anesthetic gases, boron, carbon disulfide, chlorodecone, chloroprene, some carbamates (carbaryl), diaminostilbene, 1,2-dibromo-3-chloropropane, ethylene glycol ethers, ethylene dibromide, inorganic lead, manganese, methyl chloride, organic solvents, synthetic estrogens and progestins, tetraethyllead, combined exposure to styrene and acetone, welding operations, and heat. The majority of reviewed papers on female fertility concerns the alterations of menstrual cycle and pregnancy complications rather than occupational exposure-induced female infertility. The literature supports the hypothesis that, in general, working women have a tendency of higher risk of unsuccessful reproductive outcomes, although the existing data are not sufficient. PMID:8243410

Chiral detection in high-performance liquid chromatography by vibrational circular dichroism.

PubMed

Tran, C D; Grishko, V I; Huang, G

1994-09-01

A novel chiral detector for high-performance liquid chromatography has been developed. This detector is based on the measurement of circular dichroism of chiral effluents in the infrared region, i.e., vibrational circular dichroism (VCD). In this instrument, a solid-state spectral tunable (from 2.4 to 3.5 microns) F-center laser was used as the light source. The linearly polarized laser beam was converted into left circularly polarized light (LCPL) and right circularly polarized light (RCPL) at 42 kHz by means of a photoelastic modulator. The intensity of the LCPL and RCPL transmitted through the sample was measured by a liquid nitrogen cooled indium antimonide detector. Double modulation was employed to reduce the noise associated with the laser beam. Specifically, the linearly polarized laser beam, prior to being converted to CPL, was modulated at 85 Hz by a mechanical chopper. Demodulation and amplification were accomplished with the use of two lock-in amplifiers. In its present configuration, the instrument can be used to measure the VCD of O-H groups. Its sensitivity is so high that it was able, for the first time, to detect chirally (with limits of detection of micrograms) (R)- and (S)-2,2,2-trifluoro-1-(9- anthryl)ethanol and (R)- and (S)-benzoin when these compounds were chromatographically separated from the corresponding racemic mixtures by a Chiralcel-OD column. The main advantage of this chiral detector is, however, its universality; i.e., it can be used to virtually detect any chiral compounds which has O-H group (e.g, aliphatic alcohols such as 2-octanol).

GaAs/AlOx high-contrast grating mirrors for mid-infrared VCSELs

NASA Astrophysics Data System (ADS)

Almuneau, G.; Laaroussi, Y.; Chevallier, C.; Genty, F.; Fressengeas, N. s.; Cerutti, L.; Gauthier-Lafaye, Olivier

2015-02-01

Mid-infrared Vertical cavity surface emitting lasers (MIR-VCSEL) are very attractive compact sources for spectroscopic measurements above 2μm, relevant for molecules sensing in various application domains. A long-standing issue for long wavelength VCSEL is the large structure thickness affecting the laser properties, added for the MIR to the tricky technological implementation of the antimonide alloys system. In this paper, we propose a new geometry for MIR-VCSEL including both a lateral confinement by an oxide aperture, and a high-contrast sub-wavelength grating mirror (HCG mirror) formed by the high contrast combination AIOx/GaAs in place of GaSb/A|AsSb top Bragg reflector. In addition to drastically simplifying the vertical stack, HCG mirror allows to control through its design the beam properties. The robust design of the HCG has been ensured by an original method of optimization based on particle swarm optimization algorithm combined with an anti-optimization one, thus allowing large error tolerance for the nano-fabrication. Oxide-based electro-optical confinement has been adapted to mid-infrared lasers, byusing a metamorphic approach with (Al) GaAs layer directly epitaxially grown on the GaSb-based VCSEL bottom structure. This approach combines the advantages of the will-controlled oxidation of AlAs layer and the efficient gain media of Sb-based for mid-infrared emission. We finally present the results obtained on electrically pumped mid-IR-VCSELs structures, for which we included oxide aperturing for lateral confinement and HCG as high reflectivity output mirrors, both based on AlxOy/GaAs heterostructures.

MOCVD growth and characterization of gallium nitride and gallium antimonide nanowires

NASA Astrophysics Data System (ADS)

Burke, Robert Alan

Group-III nitride and group-III antimonide thin films have been used for years in optoelectronic, high-speed applications, and high power/high temperature applications such as light emitting diodes (LEDs), microwave power devices, and thermovoltaics. In recent years, nanowires have gained interest due to the ability to take advantage of their geometry for increased light absorption and the synthesis of radial heterostructures. Several growth techniques have been explored for the growth of GaN and GaSb nanowires. Metal-organic chemical vapor deposition (MOCVD) is of particular interest due to its use in the commercial growth and fabrication of GaN-based and GaSb-based devices. The first part of this thesis focused on addressing several key issues related to the growth of GaN nanowires by MOCVD. Preliminary studies investigated the effect of growth conditions on GaN nanowire formation in a hot wall MOCVD reactor. A computational fluid dynamics-based model was developed to predict the gas phase velocity, temperature and concentration profiles in the reactor. The results demonstrate a strong dependence of GaN nanowire growth on substrate position within the reactor which is due to the rapid reaction and depletion of precursors near the gas inlet of the reactor. Ni-catalyzed GaN nanowire growth was observed to occur over the temperature range of 800-900°C, which is significantly lower than typical GaN thin film temperatures. The nanowires, however, exhibited a tapered diameter due to thin film deposition which occurred simultaneously with nanowire growth. Based on the low growth temperatures, TEM characterization was carried out to investigate the nature of the catalyst. Through these studies, the catalyst was found to consist of Ni3Ga, indicating the presence of a vapor-solid-solid growth mechanism. In an attempt to improve the nanowire growth selectivity, GeCl4 was added during growth resulting in a drastic increase in nanowire density and a reduction in the tapering of the nanowires. Upon further inspection with TEM, the nanowires were found to consist of two morphologies: smooth nanowires and serrated nanowires. The smooth nanowires were found to consist of the wurtzite crystal structure, while the serrated nanowires were determined to have a wurtzite core with zinc blende faceted islands protruding from the wurtzite core. The second half of this thesis focused on the growth and characterization of GaSb nanowires. An extensive amount of work has been carried out on GaSb thin films, however only a few reports exist on GaSb nanowire growth. As a result, it was necessarily to complete a systematic study to determine a growth window for GaSb nanowires. A narrow range of growth conditions were found for Au-catalyzed GaSb nanowire growth. Vertically oriented nanowires were observed over a pressure range of 150-300 Torr depending on the substrate. Based on these findings, additional characterization was carried out to investigate the structural properties of the nanowires along with chemical analysis of the catalyst to determine the nature of the catalyst as a function of the growth conditions. The catalyst was found to consist of Ga, Sb, and Au consistent with that expected for vapor-liquidsolid growth, however the concentrations varied depending on the growth conditions and nanowire sample. For one set of nanowires, the seed particle contained a Au-Sb solid solution (1-15 at.% Sb). For the other set of nanowires, the particle consisted of an AuSb2 grain and an AuGa or Au2Ga grain that resulted in the formation of a bicrystalline nanowire. Photoluminescence measurements were also obtained on these samples and compared to the thin film literature. Samples grown on Si (111) were found to possess good optical properties, while samples grown on sapphire substrates were dominated by native defect transitions. The optical quality of the nanowire sample was also found to have a significant dependence on the V/III ratio.

InAs/GaInSb superlattices as a promising material system for third generation infrared detectors

NASA Astrophysics Data System (ADS)

Rogalski, A.; Martyniuk, P.

2006-04-01

Hitherto, two families of multielement detectors have been used for infrared applications: scanning systems (first generation) and staring systems (second generation). Third generation systems are being developed nowadays. In the common understanding, third generation IR systems provide enhanced capabilities like larger number of pixels, higher frame rates, better thermal resolution as well as multicolour functionality and other on-chip functions. In the class of third generation infrared photon detectors, two main competitors, HgCdTe photodiodes and AlGaAs/GaAs quantum well infrared photoconductors (QWIPs) are considered. However, in the long wavelength infrared (LWIR) region, the HgCdTe material fail to give the requirements of large format two-dimensional (2-D) arrays due to metallurgical problems of the epitaxial layers such as uniformity and number of defective elements. A superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an attractive alternative to HgCdTe with good spatial uniformity and an ability to span cut-off wavelength from 3 to 25 μm. The recently published results have indicated that high performance middle wavelength infrared (MWIR) InAs/GaInSb superlattice focal plane arrays can be fabricated. Also LWIR photodiodes with the R0A values exceeding 100 Ωcm 2 even with a cut-off wavelength of 14 μm can be achieved. Based on these very promising results it is obvious now that the antimonide superlattice technology is competing with HgCdTe dual colour technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, G. R.; Gordon, N. T.; Hall, D. J.; Ashby, M. K.; Little, J. C.; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, M. T.; Ashley, T.

2004-01-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source’ of IR radiation for gas sensing; radiation shielding for, and non-uniformity correction of, high sensitivity staring infrared detectors; and dynamic infrared scene projection. Similarly, infrared (IR) detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We present results on negative luminescence in the mid- and long-IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1 cm×1 cm. We also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high-performance imaging is anticipated from systems which require no mechanical cooling.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, Geoff R.; Gordon, Neil T.; Hall, David J.; Little, J. Chris; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, Martin T.; Ashley, Tim

2004-02-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source" of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very higher performance imaging is anticipated from systems which require no mechanical cooling.

Infrared Negative Luminescent Devices and Higher Operating Temperature Detectors

NASA Astrophysics Data System (ADS)

Ashley, Tim

2003-03-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a source' of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high performance imaging is anticipated from systems which require no mechanical cooling.

Epitaxial Growth of Cadmium Telluride Films on Silicon and Indium Antimonide Substrates Using a Closed Hot Wall Epitaxy System

NASA Astrophysics Data System (ADS)

Kuo, Tien-Chuan

For many applications, such as infrared detector and high speed devices, we need high quality cadmium telluride (CdTe) films. To fabricate CdTe films we are using a home -built Closed Hot Wall Epitaxy system (CHWE). This system consists of two growth chambers, preheat chamber, substrate exchange load lock and ultra-high vacuum system. It can exchange the substrates without disturbing the vacuum environment and prevents the source materials from contamination. Two different substrate materials, Si and InSb, are used in this work. Deposition parameters were varied in order to determine the growth condition for obtaining good quality CdTe films. The characteristics of the films were investigated by Scanning Electron Microscope, X-ray diffractormeter and Auger Electron Spectroscope. The electrical properties of Al/CdTe/InSb MIS diodes are also examined. Experimental results show that the quality of the CdTe films on these two substrates are functions of the source and substrate temperatures. The surface of CdTe films grown on Si substrate are rougher than CdTe films grown on InSb substrate. X -ray patterns show that the crystal orientations of the CdTe films are, (100) and (111), similar to those of the substrates under optimum growth conditions. The CdTe film are stoichiometric based on the results of Auger survey. Electrical measurement also indicates that CdTe films grown on InSb substrates have very high purity and are insulator. The induced stresses due to the differences of lattice constant and thermal expansion coefficient between CdTe films and substrates were observed in CdTe films. The critical thickness of CdTe films on InSb substrates are measured by X-ray diffraction to be 2.63 um.

Structural Evolution of Iron Antimonides from Amorphous Precursors to Crystalline Products Studied by Total Scattering Techniques.

PubMed

Bauers, Sage R; Wood, Suzannah R; Jensen, Kirsten M Ø; Blichfeld, Anders B; Iversen, Bo B; Billinge, Simon J L; Johnson, David C

2015-08-05

Homogeneous reaction precursors may be used to form several solid-state compounds inaccessible by traditional synthetic routes, but there has been little development of techniques that allow for a priori prediction of what may crystallize in a given material system. Here, the local structures of FeSbx designed precursors are determined and compared with the structural motifs of their crystalline products. X-ray total scattering and atomic pair distribution function (PDF) analysis are used to show that precursors that first nucleate a metastable FeSb3 compound share similar local structure to the product. Interestingly, precursors that directly crystallize to thermodynamically stable FeSb2 products also contain local structural motifs of the metastable phase, despite their compositional disagreement. While both crystalline phases consist of distorted FeSb6 octahedra with Sb shared between either two or three octahedra as required for stoichiometry, a corner-sharing arrangement indicative of AX3-type structures is the only motif apparent in the PDF of either precursor. Prior speculation was that local composition controlled which compounds nucleate from amorphous intermediates, with different compositions favoring different local arrangements and hence different products. This data suggests that local environments in these amorphous intermediates may not be very sensitive to overall composition. This can provide insight into potential metastable phases which may form in a material system, even with a precursor that does not crystallize to the kinetically stabilized product. Determination of local structure in homogeneous amorphous reaction intermediates from techniques such as PDF can be a valuable asset in the development of systematic methods to prepare targeted solid-state compounds from designed precursors.

Donor Magneto-Spectroscopy and Magnetic Field - Metal-Insulator Transition in MERCURY(1-X) Cadmium(x)tellurium and Indium Antimonide

NASA Astrophysics Data System (ADS)

Choi, Jung Bum

Far infrared (FIR) magneto-transmission studies of n-type Hg_{1-x}Cd _{x}Te (x = 0.198, 0.204, 0.224, 0.237, 0.270) for temperatures down to 1.5K and magnetic fields up to 9T in Voigt and Faraday geometries have been performed. Magneto-optical transitions of donor bound electrons are observed; including the (000) --> (001) and (010) --> (01k_{z}) in the Voigt geometry, and the (000) --> (110) in the Faraday geometry. These identifications are confirmed by their resonance positions, selection rules, and temperature dependence. The experimental observations are consistent with calculations of resonance positions and lineshapes based on the hydrogenic donor model including central cell effects. This work confirms the donor bound electronic ground state for Hg_{1-x}Cd_{x} Te. The magneto-transport and FIR spectroscopy have been combined to probe the nature of the impurity band in the vicinity of the magnetic field induced metal-insulator transition. The results obtained in Hg_ {1-x}Cd_{x}Te and InSb show the persistance of the (000) --> (110) impurity transition through the metal-insulator critical field. This observation demonstrates the existence of the metallic impurity band which is split off from the conduction band. In the studies of the critical behavior of InSb, the conductivity measured for temperatures down to 0.45K shows a dominant linear dependence on temperature near the transition field. Furthermore, the zero-temperature extrapolated conductivity was found to drop continuously to zero at the transition field with a critical exponent of nu = 1.07 +/- 0.07.

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

NASA Astrophysics Data System (ADS)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

2016-12-01

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Materials growth and characterization of thermoelectric and resistive switching devices

NASA Astrophysics Data System (ADS)

Norris, Kate J.

In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy. As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of erbium monoantimonide (ErSb) thin films with thermal conductivities close to or slightly smaller than the alloy limit of the two ternary alloy hosts. Second we consider an ex-situ monitoring technique based on glancing-angle infrared-absorption used to determine small amounts of erbium antimonide (ErSb) deposited on an indium antimonide (InSb) layer, a concept for thermoelectric devices to scatter phonons. Thirdly we begin our discussion of nanowires with the selective area growth (SAG) of single crystalline indium phosphide (InP) nanopillars on an array of template segments composed of a stack of gold and amorphous silicon. Our approach enables flexible and scalable nanofabrication using industrially proven tools and a wide range of semiconductors on various non-semiconductor substrates. Then we examine the use of graphene to promote the growth of nanowire networks on flexible copper foil leading to the testing of nanowire network devices for thermoelectric applications and the concept of multi-stage devices. We present the ability to tailor current-voltage characteristics to fit a desired application of thermoelectric devices by using nanowire networks as building blocks that can be stacked vertically or laterally. Furthermore, in the study of our flexible nanowire network multi-stage devices, we discovered the presence of nonlinear current-voltage characteristics and discuss how this feature could be utilized to increase efficiency for thermoelectric devices. This work indicates that with sufficient volume and optimized doping, flexible nanowire networks could be a low cost semiconductor solution to our wasted heat challenge. Resistive switching devices are two terminal electrical resistance switches that retain a state of internal resistance based on the history of applied voltage and current. The occurrence of reversible resistance switching has been widely studied in a variety of material systems for applications including nonvolatile memory, logic circuits, and neuromorphic computing. To this end we next we studied devices in each resistance state of a TaOx switch, which has previously shown high endurance and desirable switching behavior, to better understand the system in nanoscale devices. Finally, we will discuss a self-aligned NbO2 nano-cap demonstrated atop a TaO2.2 switching layer. The goal of this device is to create a nanoscale RRAM and selector device in a single stack. These results indicate that ternary resistive switching devices may be a beneficial method of combining behaviors of different material systems and that with proper engineering a self-aligned selector is possible.

Synthesis and structural characterization of the Zintl phases Na{sub 3}Ca{sub 3}TrPn{sub 4}, Na{sub 3}Sr{sub 3}TrPn{sub 4}, and Na{sub 3}Eu{sub 3}TrPn{sub 4} (Tr=Al, Ga, In; Pn=P, As, Sb)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yi; Suen, Nian-Tzu; College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002

15 new quaternary Zintl phases have been synthesized by solid-state reactions from the respective elements, and their structures have been determined by single-crystal X-ray diffraction. Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) crystallize in the hexagonal crystal system with the non-centrosymmetric space group P6{sub 3}mc (No. 186). The structure represents a variant of the K{sub 6}HgS{sub 4} structure type (Pearson index hP22) and features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. The nominal formula rationalization [Na{sup +}]{sub 3}[E{sup 2+}]{sub 3}[TrPn{sub 4}]{sup 9–} follows themore » octet rule, suggesting closed-shell configurations for all atoms and intrinsic semiconducting behavior. However, structure refinements for several members hint at disorder and mixing of cations that potentially counteract the optimal valence electron count. - Graphical abstract: The hexagonal, non-centrosymmetric structure of Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. - Highlights: • 15 quaternary phosphides, arsenides, and antimonides are synthesized and structurally characterized. • The structure is a variant of the hexagonal K{sub 6}HgS{sub 4}-type, with distinctive pattern for the cations. • Occupational and/or positional disorder of yet unknown origin exists for some members of the series.« less

Growth of 1.5-1.55 micron gallium indium nitrogen arsenic antimonide lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Bae, Hopil

With the advent of new Internet services for exchaging not only texts and pictures but also home-made videos and high-definition movies, the appetite for more internet bandwidth is still growing at a fast pace. Satisfying these demands require extending the high-speed fiber optical networks all the way to the end users. This approach will require high-performance lasers, detectors, and modulators that are also very inexpensive and power-efficient. VCSELs are ideal light sources for this application due to their low power consumption, easier fiber coupling, ease of fabrication, and the possibility of dense 2-D integration. A new GaAs-based gain material, GaInNAsSb, can be an enabling technology for VCSELs in the 1.3-1.6mum wavelength range appropriate for optical communications. It can also enable high-power lasers for pumping Raman amplifiers, which can significantly increase the usable bandwidth of optical fibers. Growth of GaInNAsSb by molecular beam epitaxy has been very challenging, but various improvements in growth and annealing conditions lead to very low-threshold 1.55mum edge-emitting lasers and the first GaAs-based pulsed-mode 1.534mum VCSELs. Improving their temperature stability and achieving room-temperature continuous-wave(CW) VCSELs was the main objective of this thesis work. This thesis first discusses additional improvements in annealing and growth conditions, which led to a factor of 4 increase in the peak pholuminescence intensity. Edge-emitting lasers employing different numbers and structures of GaInNasSb QWs were compared, and the carrier leakage to the GaNAs barriers has been identified to be the dominant source of carrier recombination, by measurements using segmented contacts. Using the same triple QW structures and carefully designed AlGaAs/GaAs DBR mirrors, the first-ever all-epitaxial near-room-temperature CW VCSELs at 1528nm are realized on GaAs substrates.

Tracking Sodium-Antimonide Phase Transformations in Sodium-Ion Anodes: Insights from Operando Pair Distribution Function Analysis and Solid-State NMR Spectroscopy

DOE PAGES

Allan, Phoebe K.; Griffin, John M.; Darwiche, Ali; ...

2016-01-29

We use operando pair distribution function (PDF) analysis and ex situ 23Na magic-angle spinning solid-state nuclear magnetic resonance (MAS ssNMR) spectroscopy to gain insight into the alloying mechanism of high-capacity antimony anodes for sodium-ion batteries. Subtraction of the PDF of crystalline Na xSb phases from the total PDF, an approach constrained by chemical phase information gained from 23Na ssNMR in reference to relevant model compounds, identifies two previously uncharacterized intermediate species formed electrochemically; a-Na 3–xSb (x ≈ 0.4–0.5), a structure locally similar to crystalline Na 3Sb (c-Na 3Sb) but with significant numbers of sodium vacancies and a limited correlation length,more » and a-Na1.7Sb, a highly amorphous structure featuring some Sb–Sb bonding. The first sodiation breaks down the crystalline antimony to form first a-Na 3–xSb and, finally, crystalline Na 3Sb. Desodiation results in the formation of an electrode formed of a composite of crystalline and amorphous antimony networks. We link the different reactivity of these networks to a series of sequential sodiation reactions manifesting as a cascade of processes observed in the electrochemical profile of subsequent cycles. The amorphous network reacts at higher voltages reforming a-Na 1.7Sb, then a-Na 3–xSb, whereas lower potentials are required for the sodiation of crystalline antimony, which reacts to form a-Na 3–xSb without the formation of a-Na 1.7Sb. a-Na 3–xSb is converted to crystalline Na 3Sb at the end of the second discharge. In the end, we find no evidence of formation of NaSb. Variable temperature 23Na NMR experiments reveal significant sodium mobility within c-Na 3Sb; this is a possible contributing factor to the excellent rate performance of Sb anodes.« less

Advanced photovoltaic power systems using tandem GaAs/GaSb concentrator modules

NASA Technical Reports Server (NTRS)

Fraas, L. M.; Kuryla, M. S.; Pietila, D. A.; Sundaram, V. S.; Gruenbaum, P. E.; Avery, J. E.; Dihn, V.; Ballantyne, R.; Samuel, C.

1992-01-01

In 1989, Boeing announced the fabrication of a tandem gallium concentrator solar cell with an energy conversion efficiency of 30 percent. This research breakthrough has now led to panels which are significantly smaller, lighter, more radiation resistant, and potentially less expensive than the traditional silicon flat plate electric power supply. The new Boeing tandem concentrator (BTC) module uses an array of lightweight silicone Fresnel lenses mounted on the front side of a light weight aluminum honeycomb structure to focus sunlight onto small area solar cells mounted on a thin back plane. This module design is shown schematically. The tandem solar cell in this new module consists of a gallium arsenide light sensitive cell with a 24 percent energy conversion efficiency stacked on top of a gallium antimonide infrared sensitive cell with a conversion efficiency of 6 percent. This gives a total efficiency 30 percent for the cell-stack. The lens optical efficiency is typically 85 percent. Discounting for efficiency losses associated with lens packing, cell wiring, and cell operating temperature still allows for a module efficiency of 22 percent which leads to a module power density of 300 Watts/sq. m. This performance provides more than twice the power density available from a single crystal silicon flat plate module and at least four times the power density available from amorphous silicon modules. The fact that the lenses are only 0.010 ft. thick and the aluminum foil back plane is only 0.003 ft. thick leads to a very lightweight module. Although the cells are an easy to handle thickness of 0.020 ft., the fact that they are small, occupying one-twenty-fifth of the module area, means that they add little to the module weight. After summing all the module weights and given the high module power, we find that we are able to fabricate BTC modules with specific power of 100 watts/kg.

Tracking Sodium-Antimonide Phase Transformations in Sodium-Ion Anodes: Insights from Operando Pair Distribution Function Analysis and Solid-State NMR Spectroscopy

PubMed Central

2016-01-01

Operando pair distribution function (PDF) analysis and ex situ 23Na magic-angle spinning solid-state nuclear magnetic resonance (MAS ssNMR) spectroscopy are used to gain insight into the alloying mechanism of high-capacity antimony anodes for sodium-ion batteries. Subtraction of the PDF of crystalline NaxSb phases from the total PDF, an approach constrained by chemical phase information gained from 23Na ssNMR in reference to relevant model compounds, identifies two previously uncharacterized intermediate species formed electrochemically; a-Na3–xSb (x ≈ 0.4–0.5), a structure locally similar to crystalline Na3Sb (c-Na3Sb) but with significant numbers of sodium vacancies and a limited correlation length, and a-Na1.7Sb, a highly amorphous structure featuring some Sb–Sb bonding. The first sodiation breaks down the crystalline antimony to form first a-Na3–xSb and, finally, crystalline Na3Sb. Desodiation results in the formation of an electrode formed of a composite of crystalline and amorphous antimony networks. We link the different reactivity of these networks to a series of sequential sodiation reactions manifesting as a cascade of processes observed in the electrochemical profile of subsequent cycles. The amorphous network reacts at higher voltages reforming a-Na1.7Sb, then a-Na3–xSb, whereas lower potentials are required for the sodiation of crystalline antimony, which reacts to form a-Na3–xSb without the formation of a-Na1.7Sb. a-Na3–xSb is converted to crystalline Na3Sb at the end of the second discharge. We find no evidence of formation of NaSb. Variable temperature 23Na NMR experiments reveal significant sodium mobility within c-Na3Sb; this is a possible contributing factor to the excellent rate performance of Sb anodes. PMID:26824406

Microminiature rotary Stirling cryocooler for compact, lightweight, and low-power thermal imaging systems

NASA Astrophysics Data System (ADS)

Filis, Avishai; Bar Haim, Zvi; Pundak, Nachman; Broyde, Ramon

2009-05-01

Novel compact and low power consuming cooled infrared thermal imagers as used in gyro-stabilized payloads of miniature unmanned aerial vehicles, Thermal small arms sights and tactical night vision goggles often rely on integral rotary micro-miniature closed cycle Stirling cryogenic engines. Development of EPI Antimonides technology and optimization of MCT technology allowed decreasing in order of magnitudes the level of dark current in infrared detectors thus enabling an increase in the optimal focal plane temperature in excess of 95K while keeping the same radiometric performances as achieved at 77K using regular technologies. Maintaining focal plane temperature in the range of 95K to 110K instead of 77K improves the efficiency of Stirling thermodynamic cycle thus enlarging cooling power and enabling the development of a mini micro cooler similar to RICOR's K562S model which is three times smaller, lighter and more compact than a standard tactical cryocooler like RICOR's K508 model. This cooler also features a new type of ball bearings and internal components which were optimized to fit tight bulk constraints and maintain the required life span, while keeping a low level of vibration and noise signature. Further, the functions of management the brushless DC motor and temperature stabilization are delivered by the newly developed high performance sensorless digital controller. By reducing Dewar Detector thermal losses and increasing the focal plane temperature, longer life time operation is expected as was proved with RICOR's K508 model. Resulting from this development, the RICOR K562S model cryogenic engine consumes 1.2 - 3.0 WDC while operating in the closed loop mode and maintaining the typical focal plane arrays at 200-100K. This makes it compatible with very compact battery packages allowing further reduction of the overall thermal imager weight thus making it comparable with the compatible uncooled infrared thermal imager relying on a microbolometer detector in terms of power consumption and bulk.

Residual Gas Effects on Detached Solidification in Microgravity

NASA Technical Reports Server (NTRS)

Wilcox, William R.; Regel, Liya L.; Ramakrishnan; Kota, Arun; Anand, Gaurav

2004-01-01

Our long term goal has been to make detached solidification reproducible, which requires a full understanding of the mechanisms underlying it. Our Moving Meniscus Model of steady-state detachment predicts that it depends strongly on the surface tension of the melt and the advancing contact angle with the ampoule wall. Thus, the objective of the current project was to determine the influence of residual gases on the surface tension and contact angle of molten semiconductors on typical ampoule materials. Our focus was on the influence of oxygen on indium antimonide on clean silica ("quartz"). The research was performed by three chemical engineering graduate students, the third of whom will complete his research in the summer of 2005. Originally, we had planned to use a sealed silica cell containing a zirconia electrochemical element to control the oxygen partial pressure. However, zirconia requires an operating temperature above the 530 C melting point of InSb and is difficult to form a gas-tight seal with silica. Thus, we decided instead to flow an oxygen-containing gas through the cell. A special apparatus was designed, built and perfected. A piece of InSb was placed on a horizontal silica plate in a quartz cell. High purity argon, helium or hydrogen-containing gas is passed continuously through the cell while the oxygen concentration in the effluent gas is measured. The shape of the resulting drop was used to determine contact angle and surface tension of Ga-doped and high purity InSb. Oxygen appeared to decrease the contact angle, and definitely did not increase it. The following section gives the background for the research. Section 2 summarizes the results obtained on Ga-doped InSb with relatively high oxygen concentrations. Section 3 describes recent improvements made to the apparatus and methods of analysis. Section 4 gives recent results for high-purity InSb at low oxygen concentrations. Final results will be obtained only this summer (2005). Each section has its own references.

Degradation of Alkali-Based Photocathodes from Exposure to Residual Gases: A First-Principles Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Gaoxue; Pandey, Ravindra; Moody, Nathan A.

Photocathodes are a key component in the production of electron beams in systems such as X-ray free-electron lasers and X-ray energy-recovery linacs. Alkali-based materials display high quantum efficiency (QE), however, their QE undergoes degradation faster than metal photocathodes even in the high vacuum conditions where they operate. The high reactivity of alkali-based surfaces points to surface reactions with residual gases as one of the most important factors for the degradation of QE. In order to advance the understanding on the degradation of the QE, we investigated the surface reactivity of common residual gas molecules (e.g., O 2, CO 2, CO,more » H 2O, N 2, and H 2) on one of the best-known alkali-based photocathode materials, cesium antimonide (Cs 3Sb), using first-principles calculations based on density functional theory. Furthermore, the reaction sites, adsorption energy, and effect in the local electronic structure upon reaction of these molecules on (001), (110), and (111) surfaces of Cs 3Sb were computed and analyzed. The adsorption energy of these molecules on Cs3Sb follows the trend of O 2 (-4.5 eV) > CO 2 (-1.9 eV) > H 2O (-1.0 eV) > CO (-0.8 eV) > N 2 (-0.3 eV) ≈ H 2 (-0.2 eV), which agrees with experimental data on the effect of these gases on the degradation of QE. The interaction strength is determined by the charge transfer from the surfaces to the molecules. The adsorption and dissociation of O containing molecules modify the surface chemistry such as the composition, structure, charge distribution, surface dipole, and work function of Cs 3Sb, resulting in the degradation of QE with exposure to O 2, CO 2, H 2O, and CO.« less

Degradation of Alkali-Based Photocathodes from Exposure to Residual Gases: A First-Principles Study

DOE PAGES

Wang, Gaoxue; Pandey, Ravindra; Moody, Nathan A.; ...

2017-03-31

Photocathodes are a key component in the production of electron beams in systems such as X-ray free-electron lasers and X-ray energy-recovery linacs. Alkali-based materials display high quantum efficiency (QE), however, their QE undergoes degradation faster than metal photocathodes even in the high vacuum conditions where they operate. The high reactivity of alkali-based surfaces points to surface reactions with residual gases as one of the most important factors for the degradation of QE. In order to advance the understanding on the degradation of the QE, we investigated the surface reactivity of common residual gas molecules (e.g., O 2, CO 2, CO,more » H 2O, N 2, and H 2) on one of the best-known alkali-based photocathode materials, cesium antimonide (Cs 3Sb), using first-principles calculations based on density functional theory. Furthermore, the reaction sites, adsorption energy, and effect in the local electronic structure upon reaction of these molecules on (001), (110), and (111) surfaces of Cs 3Sb were computed and analyzed. The adsorption energy of these molecules on Cs3Sb follows the trend of O 2 (-4.5 eV) > CO 2 (-1.9 eV) > H 2O (-1.0 eV) > CO (-0.8 eV) > N 2 (-0.3 eV) ≈ H 2 (-0.2 eV), which agrees with experimental data on the effect of these gases on the degradation of QE. The interaction strength is determined by the charge transfer from the surfaces to the molecules. The adsorption and dissociation of O containing molecules modify the surface chemistry such as the composition, structure, charge distribution, surface dipole, and work function of Cs 3Sb, resulting in the degradation of QE with exposure to O 2, CO 2, H 2O, and CO.« less

High-performance IR detectors at SCD present and future

NASA Astrophysics Data System (ADS)

Nesher, O.; Klipstein, P. C.

2005-09-01

For over 27 years, SCD has been manufacturing and developing a wide range of high performance infra-red detectors, designed to operate in either the mid-wave (MWIR) or the long-wave (LWIR) atmospheric windows. These detectors have been integrated successfully into many different types of system including missile seekers, Time Delay Integration scanning systems, Hand-Held cameras, Missile Warning Systems and many others. SCD's technology for the MWIR wavelength range is based on its well established 2-D arrays of InSb photodiodes. The arrays are flip-chip bonded to SCD's analogue or digital signal processors, all of which have been designed in-house. The 2-D Focal Plane Array (FPA) detectors have a format of 320×256 elements for a 30 μm pitch and 480×384 or 640×512 elements for a 20 μm pitch. Typical operating temperatures are around 77-85K. Five years ago SCD began to develop a new generation of MWIR detectors based on the epitaxial growth of Antimonide Based Compound Semiconductors (ABCS). This ABCS technology allows band-gap engineering of the detection material which enables higher operating temperatures and multi-spectral detection. This year SCD presented its first prototype FPA from this program, an InAlSb based detector operating at a temperature of 100 K. By the end of this year SCD will introduce the first prototype MWIR detector with a 640×512 element format and a pitch of 15 μm. For the LWIR wave-length range SCD manufactures both linear Hg1-xCdxTe (MCT) detectors with a line of 250 elements and Time Delay and Integration (TDI) detectors with formats of 288×4 and 480×6. Recently, SCD has demonstrated its first prototype un-cooled detector which is based on VOx technology and which has a format of 384×288 elements, a pitch of 25 μm and a typical NETD of 50mK at F/1. In this paper we describe the present technologies and products of SCD and the future evolution of our detectors for the MWIR and LWIR detection.

Growth and analysis of gallium arsenide-gallium antimonide single and two-phase nanoparticles

NASA Astrophysics Data System (ADS)

Schamp, Crispin T.

When evaluating the path of phase transformations in systems with nanoscopic dimensions one often relies on bulk phase diagrams for guidance because of the lack of phase diagrams that show the effect of particle size. The GaAs-GaSb pseudo-binary alloy is chosen for study to gain insight into the size dependence of solid-solubility in a two-phase system. To this end, a study is performed using independent laser ablation of high purity targets of GaAs and GaSb. The resultant samples are analyzed by transmission electron microscopy. Experimental results indicate that GaAs-GaSb nanoparticles have been formed with compositions that lie within the miscibility gap of bulk GaAs-GaSb. An unusual nanoparticle morpohology resembling the appearance of ice cream cones has been observed in single component experiments. These particles are composed of a spherical cap of Ga in contact with a crystalline cone of either GaAs or GaSb. The cones take the projected 2-D shape of a triangle or a faceted gem. The liquid Ga is found to consistently be of spherical shape and wets to the widest corners of the cone, suggesting an energy minimum exists at that wetting condition. To explore this observation a liquid sphere is modeled as being penetrated by a solid gem. The surface energies of the solid and liquid, and interfacial energy are summed as a function of penetration depth, with the sum showing a cusped minimum at the penetration depth corresponding to the waist of the gem. The angle of contact of the liquid wetting the cone is also calculated, and Young's contact angle is found to occur when the derivative of the total energy with respect to penetration depth is zero, which can be a maximum or a minimum depending on the geometrical details. The spill-over of the meniscus across the gem corners is found to be energetically favorable when the contact angle achieves the value of the equilibrium angle; otherwise the meniscus is pinned at the corners.

High-performance IR detectors at SCD present and future

NASA Astrophysics Data System (ADS)

Nesher, O.; Klipstein, P. C.

2006-03-01

For over 27 years, SCD has been manufacturing and developing a wide range of high performance infrared detectors, designed to operate in either the mid-wave (MWIR) or the long-wave (LWIR) atmospheric windows. These detectors have been integrated successfully into many different types of system including missile seekers, time delay integration scanning systems, hand-held cameras, missile warning systems and many others. SCD's technology for the MWIR wavelength range is based on its well established 2D arrays of InSb photodiodes. The arrays are flip-chip bonded to SCD's analogue or digital signal processors, all of which have been designed in-house. The 2D focal plane array (FPA) detectors have a format of 320×256 elements for a 30-μm pitch and 480×384 or 640×512 elements for a 20-μm pitch. Typical operating temperatures are around 77-85 K. Five years ago SCD began to develop a new generation of MWIR detectors based on the epitaxial growth of antimonide based compound semiconductors (ABCS). This ABCS technology allows band-gap engineering of the detection material which enables higher operating temperatures and multi-spectral detection. This year SCD presented its first prototype FPA from this program, an InAlSb based detector operating at a temperature of 100 K. By the end of this year SCD will introduce the first prototype MWIR detector with a 640×512 element format and a pitch of 15 μm. For the LWIR wavelength range SCD manufactures both linear Hg1-xCdxTe (MCT) detectors with a line of 250 elements and time delay and integration (TDI) detectors with formats of 288×4 and 480×6. Recently, SCD has demonstrated its first prototype uncooled detector which is based on VOx technology and which has a format of 384×288 elements, a pitch of 25 μm, and a typical NETD of 50 mK at F/1. In this paper, we describe the present technologies and products of SCD and the future evolution of our detectors for the MWIR and LWIR detection.

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1.31mum: 1.46mum. These techniques offer the promise of inexpensive, high speed fiber networking.

Focal plane arrays based on Type-II indium arsenide/gallium antimonide superlattices

NASA Astrophysics Data System (ADS)

Delaunay, Pierre-Yves

The goal of this work is to demonstrate that Type-II InAs/GaSb superlattices can perform high quality infrared imaging from the middle (MWIR) to the long (LWIR) wavelength infrared range. Theoretically, focal plane arrays (FPAs) based on this technology could be operated at higher temperatures, with lower dark currents than the leading HgCdTe platform. This effort will focus on the fabrication of MWIR and LWIR FPAs with performance similar to existing infrared cameras. Some applications in the MWIR require fast, sensitive imagers able to sustain frame rates up to 100Hz. Such speed can only be achieved with photon detectors. However, these cameras need to be operated below 170K. Current research in this spectral band focuses on increasing the operating temperature of the FPA to a point where cooling could be performed with compact and reliable thermoelectric coolers. Type-II superlattice was used to demonstrate a camera that presented similar performance to HgCdTe and that could be operated up to room temperature. At 80K, the camera could detect temperature differences as low as 10 mK for an integration time shorter than 25 ms. In the LWIR, the electric performance of Type-II photodiodes is mainly limited by surface leakage. Aggressive processing steps such as hybridization and underfill can increase the dark current of the devices by several orders of magnitude. New cleaning and passivation techniques were used to reduce the dark current of FPA diodes by two orders of magnitudes. The absorbing GaSb substrate was also removed to increase the quantum efficiency of the devices up to 90%. At 80K, a FPA with a 9.6 microm 50%-cutoff in responsivity was able to detect temperature differences as low as 19 mK, only limited by the performance of the testing system. The non-uniformity in responsivity reached 3.8% for a 98.2% operability. The third generation of infrared cameras is based on multi-band imaging in order to improve the recognition capabilities of the imager. Preliminary detectors based on back to back diodes presented similar performance to single colors devices; the quantum efficiency was measured higher than 40% for both bands. Preliminary imaging results were demonstrated in the LWIR.

Detection of ethene and other hydrocarbons in gas turbine engine exhaust using non-intrusive FTIR spectroscopy

NASA Astrophysics Data System (ADS)

Arrigone, Giovanni M.; Welch, Michael A.; Hilton, Moira; Miller, Michael N.; Wilson, Christopher W.

2003-04-01

As part of the EU funded project AEROJET2, a number of gas turbine engine tests were performed in different facilities around Europe. At Farnborough, UK a Spey engine was used to test a suite of prototype optically based instrumentation designed to measure exhaust gas emissions without using extractive probe systems. In addition to the AEROJET 2 prototype instrumentation, a Bruker Equinox 55 Fourier transform infrared (FTIR) spectrometer was used to obtain infrared spectra of the exhaust plume both in emission and absorption mode. The Bruker FTIR spectrometer was fitted with a periscope system so that different lines of sight could be monitored in the plume in a vertical plane 25 cm downstream from the nozzle exit and 20 cm upstream of the center line of sight of the AEROJET 2 prototype instrumentation. DERA (now QinetiQ) provided exhaust gas analysis data for different engine running conditions using samples extracted from the plume with an intrusive probe. The probe sampled along a horizontal plane across the centerline of the engine 45 cm downstream of the nozzle exit. The Bruker spectrometer used both InSb (indium antimonide) and MCT (mercury-cadmium-telluride) detectors to maximize the sensitivity across the IR range 600-4000 cm-1. Typically, CO2 and H2O IR signatures dominate the observed spectra of the plume. However, the engine tests showed that at low power engine conditions spectral features associated with CO around 2147 cm-1 and with hydrocarbons could be observed at around 3000 cm-1. In particular the presence of ethene (C2H2) was detected from observation of its characteristic in and out of plane vibration mode at 949 cm-1. At high engine powers the presence of NO was detected at 1900.3 cm-1. Species concentrations were calculated using a slab model for each line of sight compared against reference spectra. The engine plume was assumed to be symmetric about the centerline. On this basis, data from the extractive sampling gas analysis that had been obtained by traversing the probe across a horizontal plane through the centerline could be compared with non-intrusive measurements made by scanning vertically. Adjustments have been made to account for the 20 cm downstream offset in measurement planes of the probe and the spectrometer behind the nozzle exit.

Solute redistribution and constitutional supercooling effects in vertical Bridgman grown indium gallium antimonide by accelerated crucible rotation technique

NASA Astrophysics Data System (ADS)

Vogel, K. Juliet

The ternary alloy, InxGa1- xSb, is a compound semiconducting material of compositionally tunable bandgap (0.18 - 0.72 eV), making it desirable for use in photovoltaic, photodetector, and other opto-electronic devices in the infra-red regime. In the past, this material has proven to be difficult to synthesize in bulk due to the large phase separation between the constituent binaries. In this work, InxGa1-xSb has been grown in a state-of-the-art, computer-controlled system based on vertical Bridgman technique designed to allow crucible rotation during solidification of the material to reincorporate excess solute and improve material quality. Independent thermocouples allow for in situ monitoring and maintenance of the temperature to 0.2°C precision during crystal growth, reducing compositional inhomogeneities caused by temperature fluctuations. A series of experiments has been performed to evaluate the effect of accelerated crucible rotation technique (ACRT) on the structural quality and compositional homogeneity of bulk-grown InxGa 1-xSb for a starting melt composition of x = 0.25. A lowering rate of 3 mm/hr has been employed, for an overall cooling rate of 5.1°C/hr, which deliberately exceeds the threshold for constitutional supercooling. Scanning electron microscopy (SEM) has been performed on samples of In0.18Ga0.82Sb revealing a 92% percent reduction in micro-cracking with the application of ACRT when compared to synthesis performed without rotation. Furthermore; electron probe microscopy (EPMA) indicates an order of magnitude improvement in compositional homogeneity in the direction of growth with the use of ACRT. Micro-cracking and compositional homogeneity throughout cross-sections of InxGa1-xSb material also indicate areas of improved mixing during solidification, which can be compared to existing models of fluid flow exhibited in ACRT. The boule synthesized with ACRT shows a decrease in compositional deviation of 62% in the first-to-freeze areas of the sample, indicating suppression of supercooling in areas identified as Ekman flow regions. Results also demonstrate evidence of "dead-zones" in the ACRT mixing in the extreme center of the material, which confirms computational models of ACRT-induced fluid flow above the Ekman shear layer.

Interaction of coal-derived synthesis gas impurities with solid oxide fuel cell metallic components

NASA Astrophysics Data System (ADS)

Marina, Olga A.; Pederson, Larry R.; Coyle, Christopher A.; Edwards, Danny J.; Chou, Yeong-Shyung; Cramer, Carolyn N.

Oxidation-resistant alloys find use as interconnect materials, heat exchangers, and gas supply tubing in solid oxide fuel cell (SOFC) systems, especially when operated at temperatures below ∼800 °C. If fueled with synthesis gas derived from coal or biomass, such metallic components could be exposed to impurities contained in those fuel sources. In this study, coupons of ferritic stainless steels Crofer 22 APU and SS 441, austenitic nickel-chromium superalloy Inconel 600, and an alumina-forming high nickel alloy alumel were exposed to synthesis gas containing ≤2 ppm phosphorus, arsenic and antimony, and reaction products were tested. Crofer 22 APU coupons coated with a (Mn,Co) 3O 4 protective layer were also evaluated. Phosphorus was found to be the most reactive. On Crofer 22 APU, the (Mn,Cr) 3O 4 passivation layer reacted to form an Mn-P-O product, predicted to be manganese phosphate from thermochemical calculations, and Cr 2O 3. On SS 441, reaction of phosphorus with (Mn,Cr) 3O 4 led to the formation of manganese phosphate as well as an Fe-P product, predicted from thermochemical calculations to be Fe 3P. Minimal interactions with antimony or arsenic in synthesis gas were limited to Fe-Sb and Fe-As solid solution formation. Though not intended for use on the anode side, a (Mn,Co) 3O 4 spinel coating on Crofer 22 APU reacted with phosphorus in synthesis gas to produce products consistent with Mn 3(PO 4) 2 and Co 2P. A thin Cr 2O 3 passivation layer on Inconel 600 did not prevent the formation of nickel phosphides and arsenides and of iron phosphides and arsenides, though no reaction with Cr 2O 3 was apparent. On alumel, an Al 2O 3 passivation layer rich in Ni did not prevent the formation of nickel phosphides, arsenides, and antimonides, though no reaction with Al 2O 3 occurred. This work shows that unprotected metallic components of an SOFC stack and system can provide a sink for P, As and Sb impurities that may be present in fuel gases, and thus complicate experimental studies of impurity interactions with the anode.

Density-Functional Theory Study of Materials and Their Properties at Non-Zero Temperature

NASA Astrophysics Data System (ADS)

Antolin, Nikolas

Density functional theory (DFT) has proven useful in providing energetic and structural data to inform higher levels of simulation as well as populate materials databases. However, DFT does not intrinsically include temperature effects that are critical to determining materials behavior in real-world applications. By considering the magnitude of critical energy differences in a system to be studied, one may select the appropriate level of additional theory with which to supplement DFT to obtain meaningful results with respect to temperature-induced behavior. This thesis details studies on three materials systems, representing three distinct levels of additional theory used in the study of thermally-induced behavior. After introducing the concepts involved in extracting thermal data from atomistics and density functional theory in chapters 1 and 2, chapter 3 details studies on a Ni-base superalloy system and its behavior in creep testing at high temperature due to planar defects. Chapters 4 and 5 detail work on thermal stabilization of BCC phases which are unstable without temperature effects and the progress in calculating the thermodynamic stability of vacancies in these and other BCC systems. Chapter 6 describes a study of thermal effects coupling to magnetism in indium antimonide (InSb), which are the result of previously unobserved coupling between phonons and magnetic field in a diamagnetic material. All three of the systems studied exhibit materials properties which are strongly temperature-dependent, but the level of theory necessary to study them varies from simple ground state calculations to consideration of the effects of single vibrational modes within the material. Since many of the approaches used and introduced here are computationally intensive and push the limits of publicly available computational resources, this thesis puts additional focus on optimizing code execution and choosing an appropriate level of theory to probe a given material system. An inappropriate level of theory can either be computationally wasteful (or unfeasible) or yield meaningless results; it is only by the inclusion of appropriate thermal effects, determined by system to be considered, that valid results can be obtained. Though much progress has been made in generalizing the approaches described in this thesis, further research will be necessary if we hope to fulfill the lofty goal of a universally applicable method of extracting thermal data from first principles in a way that guarantees valid and useful results.

The iron-age of superconductivity: structural correlations and commonalities among the various families having -Fe-Pn- slabs (Pn = P, As and Sb).

PubMed

Ganguli, Ashok K; Prakash, Jai; Thakur, Gohil S

2013-01-21

The fascination of mankind towards a sudden change of a property, like colour, shape, elasticity, viscosity, electrical conductivity and magnetism, is well known. If the change in property is such that it leads to disapperance of an existing property or development of a new property then the effect is magical. It is for this reason that superconductivity remains an enigma for scientists for over a century after Kammerlingh Onnes discovered that the electrical resistance of mercury falls to zero below a temperature of 4.2 K. Since then scientists have been enchanted by superconductivity. Over these hundred years attempts have been made to discover materials which show this effect at higher temperatures. After a very exciting period of Cu oxide superconductors (1986-1993) there has been a lull in the search for high T(c) materials. The discovery of superconductivity in 2008 at 26 K in LaOFeAs (F-doped) has renewed the excitement in the field of superconductivity. This breakthrough in an Fe-containing compound led to the discovery of several new families of Fe-based superconductors having either pnictogens (P, As) or chalcogen (Se, Te) of the type AFFeAs (A = alkaline-earth metal), AFe(2)As(2), AFeAs (A = alkali metals), A(3)M(2)O(5)Fe(2)As(2) (M = transition metals) and A(4)M(2)O(6)Fe(2)As(2). This review article discusses in detail the structural aspects of these new Fe-based superconductors which primarily consist of edge-shared distorted FeX(4) (X = pnictogen and chalcogen) tetrahedra and these tetrahedral layers are reponsible for enabling superconductivity. Extremely large upper critical field (>200 Tesla) of these superconductors make them promising for high field application. Structural commonalities and differences among different families of these superconductors have been outlined. We also discuss the common features and differences with the copper-oxide based superconductors. Here we have discussed all the Fe-based oxypnictide families (like LnOFePn, AFe(2)Pn(2), AFFePn and A(4)M(2)M'Fe(2)As(2)O(6)etc.) known today and have also included the phosphides and antimonides other than the arsenides. We have in addition discussed in detail the various factors like pressure, hole and electron doping, transition metal doping, which have not been reviewed earlier.

Photophysical Properties of Novel Organic, Inorganic, and Hybrid Semiconductor Materials

NASA Astrophysics Data System (ADS)

Chang, Angela Yenchi

For the past 200 years, novel materials have driven technological progress, and going forward these advanced materials will continue to deeply impact virtually all major industrial sectors. Therefore, it is vital to perform basic and applied research on novel materials in order to develop new technologies for the future. This dissertation describes the results of photophysical studies on three novel materials with electronic and optoelectronic applications, namely organic small molecules DTDCTB with C60 and C70, colloidal indium antimonide (InSb) nanocrystals, and an organic-inorganic hybrid perovskite with the composition CH3NH3PbI 3-xClx, using transient absorption (TA) and photoluminescence (PL) spectroscopy. In chapter 2, we characterize the timescale and efficiency of charge separation and recombination in thin film blends comprising DTDCTB, a narrow-band gap electron donor, and either C60 or C70 as an electron acceptor. TA and time-resolved PL studies show correlated, sub-picosecond charge separation times and multiple timescales of charge recombination. Our results indicate that some donors fail to charge separate in donor-acceptor mixed films, which suggests material manipulations may improve device efficiency. Chapter 3 describes electron-hole pair dynamics in strongly quantum-confined, colloidal InSb nanocrystal quantum dots. For all samples, TA shows a bleach feature that, for several picoseconds, dramatically red-shifts prior to reaching a time-independent position. We suggest this unusual red-shift relates transient population flow through two energetically comparable conduction band states. From pump-power-dependent measurements, we also determine biexciton lifetimes. In chapter 4, we examine carrier dynamics in polycrystalline methylammonium lead mixed halide perovskite (CH3NH3PbI3-xCl x) thin films as functions of temperature and photoexcitation wavelength. At room temperature, the long-lived TA signals stand in contrast to PL dynamics, where the latter present a fast decay process prior to slower recombination. We show that this PL feature persists with similar decay amplitude and timescale for temperatures down to the phase transition temperature, and that it depends on pump photon energy at room temperature. Together with high-level electronic structure and dynamics calculations, we suggest the fast PL decay relates a characteristic organic-to-inorganic sub-lattice equilibration timescale at optoelectronic-relevant excitation energies.

High resolution x-ray diffraction of high quality 2 micron quaternary indium gallium arsenide antimonide digital alloy heterostructures grown by modulated molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Mourad, Carole Issa

2000-10-01

Growth of high quality mixed anion alloys such as InGaAsSb and AlGaAsSb are critical to laser heterostructures designed for 2--4 micron emission. However, run-to-run reproducibility as well as the ability to reproducibly change alloy compositions within a heterostructure tend to be poor. This is because the competition for incorporation between the two anions (As and Sb) is extremely sensitive to a large number of growth parameters such as temperature, incident fluxes, and growth rate, which may drift during the course of deposition, or are difficult to reset during growth. With the intent of improving reproducibility, we have grown and characterized InGaAsSb and AlGaAsSb "digital alloys" deposited using modulated incident As2 and Sb2 incident fluxes. In0.1Ga 0.9AsySb1-y alloy layers were grown by alternately exposing the film surface to As2 and Sb2 fluxes with a periodicity ranging from ˜9 to ˜22 A. Average alloy composition is determined by the duty-cycle of the anion-oven shutters. Structural characterization using high-resolution x-ray diffraction (HRXRD) shows clear satellite peaks indicating that the digital alloys retain the compositional modulation. Optical characterization using photoluminescence indicate that the digital alloys can successfully replace the conventionally grown quaternary alloys with the same average composition. In addition we have characterized digitally grown InGaAsSb layers using HRXRD and measured the sensitivity of the resulting average composition to the growth temperature. We find that the composition of In0.1Ga0.9AsySb1-y alloy layers grown digitally on GaSb substrates is nearly three times less sensitive to the growth temperature as conventional growth. Digital growth of InGaAsSb and AlGaAsSb layers has enabled the growth of heterostructures containing multiple alloy compositions by toggling between shutter duty-cycles during growth, without necessitating changes to the oven temperatures throughout deposition. We have grown and characterized optically pumped ˜2mum laser structures with InGaAsSb quantum wells and AlGaAsSb barriers both grown using the digital alloy technique. Room temperature operation, a low threshold current density of 104 W/cm2 (at 80K with 808nm pump), and a characteristic temperature (To) of 104 K show the feasibility of applying digital alloying techniques to mid-infrared optical devices.

Ballistic magnetotransport and spin-orbit interaction in indium antimonide and indium arsenide quantum wells

NASA Astrophysics Data System (ADS)

Peters, John Archibald

While charge transport in a two-dimensional electron system (2DES) is fairly well understood, many open experimental and theoretical questions related to the spin of electrons remain. The standard 2DES embedded in Alx Ga1-xAs/GaAs heterostructures is most likely not the optimal candidate for such investigations, since spin effects as well as spin-orbit interactions are small perturbations compared to other effects. This has brought InSb- and InAs-based material systems into focus due to the possibility of large spin-orbit interactions. By utilizing elastic scattering off a lithographic barrier, we investigate the consequence of spin on different electron trajectories observed in InSb and InAs quantum wells. We focus on the physical properties of spin-dependent reflection in a 2DES and we present experimental results demonstrating a method to create spin-polarized beams of ballistic electrons in the presence of a lateral potential barrier. Spatial separation of electron spins using cyclotron motion in a weak magnetic is also achieved via transverse magnetic focusing. We also explore electrostatic gating effects in InSb/InAlSb heterostructures and demonstrate the effective use of polymethylglutarimide (PMGI) as a gate dielectric for InSb. The dependence on temperature and on front gate voltage of mobility and density are also examined, revealing a strong dependence of mobility on density. As regards front gate action, there is saturation in the density once it reaches a limiting value. Further, we investigate antidot lattices patterned on InSb/InAlSb and InAs/AlGaSb heterostructures. At higher magnetic fields, ballistic commensurability features are displayed while at smaller magnetic fields localization and quantized oscillatory phenomena appear, with marked differences between InSb and InAs. Interesting localization behavior is exhibited in InSb, with the strength of the localization peak decreasing exponentially with temperature between 0.4 K and 50 K. InAs on the other hand show a strikingly modified antilocalization behavior, with small-period oscillations in magnetic field superposed. We also observe Altshuler-Aronov-Spivak oscillations in InSb and InAs antidot lattices and extract the phase and spin coherence lengths in InAs. Our experimental results are discussed in the light of localization and anti localization as probes of disorder and of spin dephasing mechanisms, modified by the artificial potential of the antidot lattice.

Improved Performance Characteristics For Indium Antimonide Photovoltaic Detector Arrays Using A FET-Switched Multiplexing Technique

NASA Astrophysics Data System (ADS)

Ma, Yung-Lung; Ma, Chialo

1987-03-01

In this paper An Acoustic Imaging Recognition System (AIRS) will be introduced which is installed on an Intelligent Robotic System and can recognize different type of Hand tools' by Dynamic pattern recognition. The dynamic pattern recognition is approached by look up table method in this case, the method can save a lot of calculation time and it is practicable. The Acoustic Imaging Recognition System (AIRS) is consist of four parts _ position control unit, pulse-echo signal processing unit, pattern recognition unit and main control unit. The position control of AIRS can rotate an angle of ±5 degree Horizental and Vertical seperately, the purpose of rotation is to find the maximum reflection intensity area, from the distance, angles and intensity of the target we can decide the characteristic of this target, of course all the decision is target, of course all the decision is processed by the main control unit. In Pulse-Echo Signal Process Unit, we utilize the correlation method, to overcome the limitation of short burst of ultrasonic, because the Correlation system can transmit large time bandwidth signals and obtain their resolution and increased intensity through pulse compression in the correlation receiver. The output of correlator is sampled and transfer into digital data by p law coding method, and this data together with delay time T, angle information eH, eV will be sent into main control unit for further analysis. The recognition process in this paper, we use dynamic look up table method, in this method at first we shall set up serval recognition pattern table and then the new pattern scanned by Transducer array will be devided into serval stages and compare with the sampling table. The comparison is implemented by dynamic programing and Markovian process. All the hardware control signals, such as optimum delay time for correlator receiver, horizental and vertical rotation angle for transducer plate, are controlled by the Main Control Unit, the Main Control Unit also handles the pattern recognition process. The distance from the target to the transducer plate is limitted by the power and beam angle of transducer elements, in this AIRS Models, we use a narrow beam transducer and it's input voltage is 50V p-p. A Robot equipped with AIRS can not only measure the distance from the target but also recognize a three dimensional image of target from the image lab of Robot memory. Indexitems, Accoustic System, Supersonic transducer, Dynamic programming, Look-up-table, Image process, pattern Recognition, Quad Tree, Quadappoach.

High-speed Imaging of Global Surface Temperature Distributions on Hypersonic Ballistic-Range Projectiles

NASA Technical Reports Server (NTRS)

Wilder, Michael C.; Reda, Daniel C.

2004-01-01

The NASA-Ames ballistic range provides a unique capability for aerothermodynamic testing of configurations in hypersonic, real-gas, free-flight environments. The facility can closely simulate conditions at any point along practically any trajectory of interest experienced by a spacecraft entering an atmosphere. Sub-scale models of blunt atmospheric entry vehicles are accelerated by a two-stage light-gas gun to speeds as high as 20 times the speed of sound to fly ballistic trajectories through an 24 m long vacuum-rated test section. The test-section pressure (effective altitude), the launch velocity of the model (flight Mach number), and the test-section working gas (planetary atmosphere) are independently variable. The model travels at hypersonic speeds through a quiescent test gas, creating a strong bow-shock wave and real-gas effects that closely match conditions achieved during actual atmospheric entry. The challenge with ballistic range experiments is to obtain quantitative surface measurements from a model traveling at hypersonic speeds. The models are relatively small (less than 3.8 cm in diameter), which limits the spatial resolution possible with surface mounted sensors. Furthermore, since the model is in flight, surface-mounted sensors require some form of on-board telemetry, which must survive the massive acceleration loads experienced during launch (up to 500,000 gravities). Finally, the model and any on-board instrumentation will be destroyed at the terminal wall of the range. For these reasons, optical measurement techniques are the most practical means of acquiring data. High-speed thermal imaging has been employed in the Ames ballistic range to measure global surface temperature distributions and to visualize the onset of transition to turbulent-flow on the forward regions of hypersonic blunt bodies. Both visible wavelength and infrared high-speed cameras are in use. The visible wavelength cameras are intensified CCD imagers capable of integration times as short as 2 ns. The infrared camera uses an Indium Antimonide (InSb) sensor in the 3 to 5 micron band and is capable of integration times as short as 500 ns. The projectiles are imaged nearly head-on using expendable mirrors offset slightly from the flight path. The proposed paper will discuss the application of high-speed digital imaging systems in the NASA-Ames hypersonic ballistic range, and the challenges encountered when applying these systems. Example images of the thermal radiation from the blunt nose of projectiles flying at nearly 14 times the speed of sound will be given.

Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

NASA Astrophysics Data System (ADS)

Goddard, Lynford

2005-12-01

Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

Faraday Rotation Studies of Indium Antimonide and CADMIUM(1-X) Manganese(x) Telluride

NASA Astrophysics Data System (ADS)

Jimenez Gonzalez, Hector J.

Faraday rotation has been studied in two material systems: narrow-gap InSb and wide-gap Cd_ {1-x}Mn_{x}Te. The measurements were done in the infrared region using high magnetic fields up to 150 kG. The Faraday rotation of n-type InSb has been measured for wavelengths between 8.0 and 13.0 μm at 9 K, using magnetic fields up to 150 kG. Measurements were made on samples with nominal carrier concentrations of 1 times 10^{14 }, 6 times 10 ^{14}, 1 times 10^{15}, and 5 times 10^{15} cm^{-3}. The experimental results have been successfully analyzed in terms of intraband and interband transitions at the Gamma point in the Brillouin zone, using a quantum-mechanical treatment. In this approach, there are three contributions to the Faraday rotation: (a) interband, (b) plasma, and (c) spin contributions. The interband contribution is dominant in the low concentration samples where the plasma and spin contributions, which are due to the free carriers, are small. At high carrier concentrations the spin and plasma contributions are dominant. In the low-magnetic -field regime the interband and plasma contributions are linearly proportional to the magnetic field and become small. This makes the spin contribution the leading contribution to the Faraday rotation at low magnetic fields. The 4 -band k cdot p Pidgeon and Brown model was used to calculate the energy levels and the matrix elements for these transitions. Quantum oscillatory effects were observed at low magnetic field. Cyclotron resonance absorption was observed in all samples for wavelengths _sp{~}{>}16.0 mum. The Faraday rotation of Cd_{1 -x}Mn_{x}Te has been measured for x = 0 to 0.27 at 300 and 77 K for photon energies between 0.1 and 1.5 eV, corresponding to wavelengths of 12.0 and 0.8 mum, respectively. We have developed a multioscillator model for the Faraday rotation using an analytical expression for the refractive index that includes contributions from interband transitions at the Gamma, L, and X points of the Brillouin zone as well as the lattice contribution from optical phonons. The multioscillator model explains the measured behavior of the Verdet constant as a function of photon energy for all the above values of x at both temperatures. This model has also been applied successfully to Faraday rotation data for Cd_ {1-x}Mn_{x}Te and Zn_{1-x}Mn _{x}Te from previous studies. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253 -1690.).

Surface Phase Stability and Surfactant Behavior on InAsSb

NASA Astrophysics Data System (ADS)

Anderson, Evan M.

InAsSb and related III-As/III-Sb heterostructures are of technological interest for applications in long wavelength infrared optoelectronic devices. However, there remain challenges to growing high quality material for these devices due to the complex interaction between As and Sb. While this interaction has been the subject of intense study, little work has focused on how As and Sb behave at the material surface with even fewer investigations into the atomic scale details of the InAsSb surface. This is a major gap in current knowledge because these materials are typically grown via vapor deposition methods, one atomic layer at a time. Thus, all processes impacting the growth of the crystal and its resultant properties occur at the surface. Despite this, the atomic scale details of the surface phases and processes impacting the Sb-As interaction have not previously been reported. This dissertation investigates the surface As-Sb interaction at an atomistic scale and its modification through different surface chemistry to be used as a guide for future experiments to improve the quality InAsSb of heterostructures by manipulating the surface phase during growth. In order to accomplish this, first principles calculations and experiments are used to investigate this system from three complimentary vantage points. First, the influence of Sb on the InAs surface and the stable surface phases of this system are investigated. Next, a similar approach is used on the opposite compositional extreme of the InAsSb system: As on the surface of InSb. Finally, the interaction of As and Sb is modified by the use of Bi as a surfactant during growth of InAsSb films. The interaction between As and Sb is found to be driven through the formation of surface phases and Bi is found to alter this interaction. Phase diagrams of both Sb on InAs and As on InSb show that As and Sb are driven to intermix through the formation of alloyed surface phases. Additionally, these phases range from having bulk-like stoichiometry to being highly As or Sb rich for the full InAsSb compositional range, indicating that surface stoichiometry is a controllable parameter for InAsSb growth. Sb is shown to intermix with the InAs surface by roughening the surface in a process driven by a phase transition. This interaction between Sb and InAs is stronger than previously thought, which has implications for the crystal growth problem of compositional broadening of the interfaces of III-As/III-Sb heterostructures. Finally, applying Bi to the surface of InAsSb during growth shows that modifies the interaction between As and Sb by catalyzing the formation of InAs, which decreases Sb incorporation. The results of this dissertation lay the foundation for optimization of the crystal growth surface in order to improve the properties of InAsSb and arsenide/antimonide heterostructures.

Thermoelectric properties of cobalt antimonide>-based skutterudites

NASA Astrophysics Data System (ADS)

Yang, Jian

Solid state cooling and power generation based on thermoelectric principles are regarded as one of the technologies with the potential of solving the current energy crisis. Thermoelectric devices could be widely used in waste heat recovery, small scale power generation and refrigeration. It has no moving parts and is environmental friendly. The limitation to its application is due to its low efficiency. Most of the current commercialized thermoelectric materials have figure of merit (ZT) around 1. To be comparable with kitchen refrigerator, ZT≃ 3 is required at room temperature. Skutterudites have emerged as member of the novel materials, which potentially have a higher ZT. In the dissertation, my investigation will be focused on the optimization of CoSb3-based skutterudites. Starting with Co and Sb elements, CoSb3 will form through a high energy ball mill. Unfortunately, even after 20 hours, only a small percentage of the powders have transformed in into CoSb3. Then the powders will be compacted into bulk samples by DC-controlled hot press. CoSb3 single phase will form after press. Characterization of the structure and thermoelectric properties will be presented with details. The effects of synthesis conditions on thermoelectric properties of skutterudites were studied and discussed. Several possible methods of improving the ZT of N type skutterudites were applied. The highest obtained ZT thus far is ˜1.2 from Yb doped CoSb3. For a group of samples with nominal composition YbxCo4Sb12, the increased Yb concentration in our samples not only enhanced the power factor due to electron doping effect but also decreased the thermal conductivity due to a stronger rattling effect. In addition, the increased grain boundary density per unit volume due to the small grains in our bulk skutterudite materials may have also helped to enhance the phonon scattering and thus to reduce the thermal conductivity. Single and double doping methods with different combinations were also tried. So far, none of them have surpassed ZT=1.2. Mixing different materials with Yb 0.35Co4Sb12 so far to increase the phonon scattering was also performed. No dramatic thermal conductivity reduction was observed. Small amounts of Fe/Mn substitution on Co sites will decrease the power factor to undesired degrees. Some results with Nd filled P type sample will be briefly introduced. P type samples are also obtained through substitution on Sb site. Preliminary work on preparing the electrode for CoSb3 will be presented in the dissertation. CoSi2 has low resistivity, and a similar coefficient of thermal expansion (CTE) as of doped CoSb3. It is good electrode candidate. DC-controlled hot press is used to make the contact. Thermal stability of the contact was tested. Small cracks will form in the contact area, further improvement is necessary. Finally, my previous work on ZnO nanowire growth is briefly introduced. Large throughput of ZnO nanowire could be obtained with NaCl as the support to promote the conversion of Zn powder to ZnO.

Thin film studies toward improving the performance of accelerator electron sources

NASA Astrophysics Data System (ADS)

Mamun, Md Abdullah Al

Future electron accelerators require DC high voltage photoguns to operate beyond the present state of the art to conduct new experiments that require ultra-bright electron beams with high average current and higher bunch charge. To meet these demands, the accelerators must demonstrate improvements in a number of photogun areas including vacuum, field emission elimination in high voltage electrodes, and photocathodes. This dissertation illustrates how these improvements can be achieved by the application of suitable thin-films to the photogun structure for producing ultra-bright electron beams. This work is composed of three complementary studies. First, the outgassing rates of three nominally identical 304L stainless steel vacuum chambers were studied to determine the effects of chamber coatings (silicon and titanium nitride) and heat treatments. For an uncoated stainless steel chamber, the diffusion limited outgassing was taken over by the recombination limited process as soon as a low outgassing rate of ~1.79(+/-0.05) x 10--13 Torr L s--1 cm--2 was achieved. An amorphous silicon coating on the stainless steel chambers exhibited recombination limited behavior and any heat treatment became ineffective in reducing the outgassing rate. A TiN coated chamber yielded the smallest apparent outgassing rate of all the chambers: 6.44(+/-0.05) x 10--13 Torr L s--1 cm--2 following an initial 90 °C bake and 2(+/-20) x 10--16 Torr L s --1 cm--2 following the final bake in the series. This perceived low outgassing rate was attributed to the small pumping nature of TiN coating itself. Second, the high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, were compared to that of bare aluminum electrodes and electrodes manufactured from titanium alloy (Ti-6Al-4V). This study suggests that aluminum electrodes, coated with TiN, could simplify the task of implementing photocathode cooling, which is required for future high current electron beam applications. The best performing TiN-coated aluminum electrode demonstrated less than 15 pA of field emission current at --175 kV for a 10 mm cathode/anode gap, which corresponds to a field strength of 22.5 MV/m. Third, the effect of antimony thickness on the performance of bialkali-antimonide photocathodes was studied. The high-capacity effusion source enabled us to successfully manufacture photocathodes having a maximum QE around 10% and extended low voltage 1/e lifetime (> 90 days) at 532 nm via the co-deposition method, with relatively thick layers of antimony (≥ 300 nm). We speculate that alkali co-deposition provides optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali. In summary, this research examined the effectiveness of thin films applied on photogun chamber components to achieve an extremely high vacuum, to eliminate high voltage induced field emission from electrodes, and to generate photocurrent with high quantum yield with an extended operational lifetime. Simultaneous implementation of these findings can meet the challenges of future ultra-bright photoguns.

Thin film studies toward improving the performance of accelerator electron sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, Md Abdullah

Future electron accelerators require DC high voltage photoguns to operate beyond the present state of the art to conduct new experiments that require ultra-bright electron beams with high average current and higher bunch charge. To meet these demands, the accelerators must demonstrate improvements in a number of photogun areas including vacuum, field emission elimination in high voltage electrodes, and photocathodes. This dissertation illustrates how these improvements can be achieved by the application of suitable thin-films to the photogun structure for producing ultra-bright electron beams. This work is composed of three complementary studies. First, the outgassing rates of three nominally identicalmore » 304L stainless steel vacuum chambers were studied to determine the effects of chamber coatings (silicon and titanium nitride) and heat treatments. For an uncoated stainless steel chamber, the diffusion limited outgassing was taken over by the recombination limited process as soon as a low outgassing rate of ~1.79(±0.05) x 10- 13 Torr L s -1 cm -2 was achieved. An amorphous silicon coating on the stainless steel chambers exhibited recombination limited behavior and any heat treatment became ineffective in reducing the outgassing rate. A TiN coated chamber yielded the smallest apparent outgassing rate of all the chambers: 6.44(±0.05) x 10 -13 Torr L s -1 cm -2 following an initial 90 °C bake and 2(±20) x 10 -16 Torr L s -1 cm -2 following the final bake in the series. This perceived low outgassing rate was attributed to the small pumping nature of TiN coating itself. Second, the high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, were compared to that of bare aluminum electrodes and electrodes manufactured from titanium alloy (Ti-6Al-4V). This study suggests that aluminum electrodes, coated with TiN, could simplify the task of implementing photocathode cooling, which is required for future high current electron beam applications. The best performing TiN-coated aluminum electrode demonstrated less than 15 pA of field emission current at -- 175 kV for a 10 mm cathode/anode gap, which corresponds to a field strength of 22.5 MV/m. Third, the effect of antimony thickness on the performance of bialkali-antimonide photocathodes was studied. The high-capacity effusion source enabled us to successfully manufacture photocathodes having a maximum QE around 10% and extended low voltage 1/e lifetime (> 90 days) at 532 nm via the co-deposition method, with relatively thick layers of antimony (≥ 300 nm). We speculate that alkali co-deposition provides optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali. In summary, this research examined the effectiveness of thin films applied on photogun chamber components to achieve an extremely high vacuum, to eliminate high voltage induced field emission from electrodes, and to generate photocurrent with high quantum yield with an extended operational lifetime. Simultaneous implementation of these findings can meet the challenges of future ultra-bright photoguns.« less

As, Bi, Hg, S, Sb, Sn and Te geochemistry of the J-M Reef, Stillwater Complex, Montana: constraints on the origin of PGE-enriched sulfides in layered intrusions

USGS Publications Warehouse

Zientek, M.L.; Fries, T.L.; Vian, R.W.

1990-01-01

The J-M Reef is an interval of disseminated sulfides in the Lower Banded series of the Stillwater Complex that is enriched in the platinum group elements (PGE). Palladium and Pt occur in solid solution in base-metal sulfides and as discrete PGE minerals. PGE minerals include sulfides, tellurides, arsenides, antimonides, bismuthides, and alloys with Fe, Sn, Hg, and Au. Several subpopulations can be delineated based on whole-rock chemical analyses for As, Bi, Cu, Hg, Pd, Pt, S, Sb and Te for samples collected from and adjacent to the J-M Reef. In general, samples from within the reef have higher Pt/Cu, Pd/Cu, Pd/Pt, Te/Bi and S/(Te+Bi) than those collected adjacent to the reef. Vertical compositional profiles through the reef suggest that Pd/Cu and Pt/Cu decrease systematically upsection from mineralized to barren rock. The majority of samples with elevated As, Sb and Hg occur adjacent to the reef, not within it, or in sulfide-poor rocks. Neither magma mixing nor fluid migration models readily explain why the minor quantities of sulfide minerals immediately adjacent to the sulfide-enriched layers that form the J-M Reef have different element ratios than the sulfide minerals that form the reef. If all the sulfides formed by exsolution during a magma mixing event and the modal proportion of sulfide now in the rocks are simply the result of mechanical processes that concentrated the sulfides into some layers and not others, then the composition of the sulfide would not be expected to be different. Models that rely upon ascending liquids or fluids are incompatible with the presence of sulfides that are not enriched in PGE immediately below or interlayered with the PGE-enriched sulfides layers. PGE-enriched postcumulus fluids should have reacted to the same extent with sulfides immediately outside the reef as within the reef. One explanation is that some of the sulfide minerals in the rocks outside the reef have a different origin than those that make up the reef. The sulfide minerals that form the reef may represent a cumulus sulfide phase that formed as the result of a magma-mixing event, achieved its high PGE contents at that time, and accumulated to form a layer. The rocks outside the reef may contain a large proportion of postcumulus sulfide minerals that formed as the last dregs of intercumulus liquids trapped in the interstitial spaces between the cumulus grains reached sulfur saturation and exsolved a sulfide liquid or precipitated a sulfide mineral. The PGE contents of these sulfides would be expected to be less than the cumulus sulfides that form the reef since they would have equilibrated with a much smaller volume of silicate liquid. Another explanation is that some of the sulfide droplets that formed as a result of the mixing event were trapped as inclusions in silicate minerals soon after they formed. This would reduce the amount of magma these sulfide droplets could equilibrate with and effectively reduce their PGE tenor. ?? 1990.

Phase separation and defect formation in stable, metastable, and unstable GaInAsSb alloys for infrared applications

NASA Astrophysics Data System (ADS)

Yildirim, Asli

GaInAsSb is a promising material for mid-infrared devices such as lasers and detectors because it is a direct band gap material with large radiative coefficient and a cut-off wavelength that can be varied across the mid-infrared (from 1.7 to 4.9 mum) while remaining lattice matched to GaSb. On the other hand, the potential of the alloy is hampered by predicted ranges of concentration where the constituents of the alloy become immiscible when the crystal is grown near thermodynamic equilibrium at typical growth temperatures. There have been efforts to extend the wavelength of GaInAsSb alloys through such techniques as digital alloy growth and non-equilibrium growth, but most of the compositional range has for a long time been inaccessible due to immiscibility challenges. Theoretical studies also supported the existence of thermodynamic immiscibility gaps for non-equilibrium growth conditions. Lower growth temperatures lead to shorther adatom diffusion length. While a shorter adatom diffusion length suppresses phase separation, too short an adatom length is associated with increased defect formation and eventually loss of crystallinity. On the other hand, hotter growth temperatures move epitaxial growth closer to thermodynamic equilib- rium conditions, and will eventually cause phase separation to occur. In this study thick 2 um; bulk GaInAsSb layers lattice-matched to GaSb substrates were grown across the entire (lattice-matched) compositional range at low growth temperatures (450° C), including the immiscibility region, when grown under non-equilibrium conditions with MBE. High quality epitaxial layers were grown for all compositions, as evidenced by smooth morphology (atomic force microscopy), high structural quality (X-ray diffraction), low alloy fluctuactions (electron dispersive spectroscopy in cross sectioned samples), and bright room temperature photoluminescence. Because initial theoretical efforts have suggessted that lattice strain can influence layer stability, we have studied effects of strain on alloy stability. Unstable and metastable alloys were grown hot enough for the onset of phase separation, then progressively strained and characterized. We show that strain is effective in suppressing phase separation. Finally, we performed time-resolved carrier lifetime measurements for InAsSb alloy with low concentrations of Ga to investigate the role of Ga in influencing nonradiative carrier recombination. There have been studies on non-Ga containing antimonide structures (InAsSb, InAs/InAsSb) that show long carrier lifetimes, which suggest that Ga plays a role in reducing carrier lifetime, because Ga-containing structures such as InAs/GaSb superlattices have much shorter carrier lifetimes. Ga may reduce carrier lifetime through native defects that increase background carrier concentration, or that create mid-gap electronic states. Here, a series of GaInAsSb alloys were grown with low to zero Ga concentration. No difference in carrier lifetime was observed between Ga and Ga-free structures, and minority carrier lifetimes > 600 ns were observed. Additional work remains to be done to obtain background carrier densities in the samples with Hall measurements.

Material Engineering for Phase Change Memory

NASA Astrophysics Data System (ADS)

Cabrera, David M.

As semiconductor devices continue to scale downward, and portable consumer electronics become more prevalent there is a need to develop memory technology that will scale with devices and use less energy, while maintaining performance. One of the leading prototypical memories that is being investigated is phase change memory. Phase change memory (PCM) is a non-volatile memory composed of 1 transistor and 1 resistor. The resistive structure includes a memory material alloy which can change between amorphous and crystalline states repeatedly using current/voltage pulses of different lengths and magnitudes. The most widely studied PCM materials are chalcogenides - Germanium-Antimony-Tellerium (GST) with Ge2Sb2Te3 and Germanium-Tellerium (GeTe) being some of the most popular stochiometries. As these cells are scaled downward, the current/voltage needed to switch these materials becomes comparable to the voltage needed to sense the cell's state. The International Roadmap for Semiconductors aims to raise the threshold field of these devices from 66.6 V/mum to be at least 375 V/mum for the year 2024. These cells are also prone to resistance drift between states, leading to bit corruption and memory loss. Phase change material properties are known to influence PCM device performance such as crystallization temperature having an effect on data retention and litetime, while resistivity values in the amorphous and crystalline phases have an effect on the current/voltage needed to write/erase the cell. Addition of dopants is also known to modify the phase change material parameters. The materials G2S2T5, GeTe, with dopants - nitrogen, silicon, titanium, and aluminum oxide and undoped Gallium-Antimonide (GaSb) are studied for these desired characteristics. Thin films of these compositions are deposited via physical vapor deposition at IBM Watson Research Center. Crystallization temperatures are investigated using time resolved x-ray diffraction at Brookhaven National Laboratory. Subsequently, these are incorporated into PCM cells with structure designed as shown in Fig.1. A photolithographic lift-off process is developed to realize these devices. Electrical parameters such as the voltage needed to switch the device between memory states, the difference in resistance between these memory states, and the amount of time to switch are studied using HP4145 equipped with a pulsed generator. The results show that incorporating aluminum oxide dopant into G2S2T 5 raises its threshold field from 60 V/mum to 96 V/mum, while for GeTe, nitrogen doping raises its threshold field from 143 V/mum to 248 V/mum. It is found that GaSb at comparable volume devices has a threshold field of 130 V/mum. It was also observed that nitrogen and silicon doping made G 2S2T5 more resistant to drift, raising time to drift from 2 to 16.6 minutes while titanium and aluminum oxide doping made GeTe drift time rise from 3 to 20 minutes. It was also found that shrinking the cell area in GaSb from 1 mum2 to 0.5 mum2 lengthened drift time from 45s to over 24 hours. The PCM process developed in this study is extended to GeTe/Sb2 Te3 multilayers called the superlattice (SL) structure that opens opportunities for future work. Recent studies have shown that the superlattice structure exhibits low switching energies, therefore has potential for low power operation.

Laser-based sensors on UAVs for quantifying local emissions of greenhouse gases

NASA Astrophysics Data System (ADS)

Zondlo, Mark; Tao, Lei; O'Brien, Anthony; Ross, Kevin; Khan, Amir; Pan, Da; Golston, Levi; Sun, Kang; DiGangi, Josh

2015-04-01

Small unmanned aerial systems (UAS) provide an ideal platform to sample both locally near an emission source as well as within the atmospheric boundary layer. However, small UAS (those with wingspans or rotors on the order of a meter) place severe constraints on sensor size (~ liter volume), mass (~ kg), and power (10s W). Laser-based sensors employing absorption techniques are ideally suited for such platforms due to their high sensitivity, high selectivity, and compact footprint. We have developed and flown compact sensors for water vapor, carbon dioxide and methane using new advances in open-path, laser-based spectroscopy on a variety of platforms ranging from remote control helicopters to long-duration UAS. Open-path spectroscopy allows for high frequency sampling (10-25 Hz) while avoiding the size/mass/power of sample delays, inlet lines, and pumps. To address the challenges of in-flight stability in changing environmental conditions and any associated flight artifacts on the measurement itself (e.g. vibrations), we use an in-line reference cell at a reduced pressure (10 hPa) to account for systematic drift continuously while in flight. Wavelength modulation spectroscopy is used at different harmonics to isolate the narrow linewidth of the in-line reference signal from the ambient, pressure-broadened absorption lineshape of the trace gas of interest. As a result, a metric of in-flight performance is achieved in real-time on the same optical pathlength as the ambient signal. To demonstrate the great potential of laser-based sensors on UAS, we deployed a 1.65 micron-based methane sensor (4 kg, 50 W, 100 ppbv precision at 10 Hz) on a UT-Dallas remote control aircraft for two weeks around gas/oil extraction activities as part of the EDF Barnett Coordinated Campaign in October 2013. We conducted thirty-four flights around a compressor station to examine the spatial and temporal characteristics of its emissions. Leaks of methane were typically lofted to altitudes well above the surface (up to 100 m). In addition, plumes were very narrow horizontally (10-30 m width) within 200 m of the emission origin. By using a mass balance approach of upwind versus downwind CH4 concentrations, coupled to meteorological wind data, the CH4 emission rate from the compressor station averaged 13 ± 5 g CH4 s-1, consistent with individual, leak surveys measured within the compressor station itself. More recently, we developed a mid-infrared version of the same sensor using an antimonide laser at 3.3 microns. This sensor has a precision of 2 ppbv CH4 at 10 Hz, a mass of 1.3 kg, and consumes 10 W of power. Flight tests show the improved precision is capable of detecting methane leaks from landfills and cattle feedlots at higher altitudes (500 m) and greater distances downwind (several km) than the near infrared CH4 sensor. Sampling strategy is particularly important for not only UAS-based flight patterns but also sensor design. Many tradeoffs exist between the sampling density of the flight pattern, sensor precision, accuracy of wind data, and geographic isolation of the source of interest, and these will be discussed in the context of airborne-based CH4 measurements in the field. The development of compact yet robust trace gas sensors to be deployed on small UAS opens new capabilities for atmospheric sensing such as quantifying local source emissions (e.g. farms, well pads), vertical profiling of trace gases in a forest canopy, and trace gas distributions in complex areas (mountains, urban canyons).

Mid-Infrared Reflectance Imaging of Thermal-Barrier Coatings

NASA Technical Reports Server (NTRS)

Edlridge, Jeffrey I.; Martin, Richard E.

2009-01-01

An apparatus for mid-infrared reflectance imaging has been developed as means of inspecting for subsurface damage in thermal-barrier coatings (TBCs). The apparatus is designed, more specifically, for imaging the progression of buried delamination cracks in plasma-sprayed yttria-stabilized zirconia coatings on turbine-engine components. Progression of TBC delamination occurs by the formation of buried cracks that grow and then link together to produce eventual TBC spallation. The mid-infrared reflectance imaging system described here makes it possible to see delamination progression that is invisible to the unaided eye, and therefore give sufficiently advanced warning before delamination progression adversely affects engine performance and safety. The apparatus (see figure) includes a commercial mid-infrared camera that contains a liquid-nitrogen-cooled focal plane indium antimonide photodetector array, and imaging is restricted by a narrow bandpass centered at wavelength of 4 microns. This narrow wavelength range centered at 4 microns was chosen because (1) it enables avoidance of interfering absorptions by atmospheric OH and CO2 at 3 and 4.25 microns, respectively; and (2) the coating material exhibits maximum transparency in this wavelength range. Delamination contrast is produced in the midinfrared reflectance images because the introduction of cracks into the TBC creates an internal TBC/air-gap interface with a high diffuse reflectivity of 0.81, resulting in substantially higher reflectance of mid-infrared radiation in regions that contain buried delamination cracks. The camera is positioned a short distance (.12 cm) from the specimen. The mid-infrared illumination is generated by a 50-watt silicon carbide source positioned to the side of the mid-infrared camera, and the illumination is collimated and reflected onto the specimen by a 6.35-cm-diameter off-axis paraboloidal mirror. Because the collected images are of a steady-state reflected intensity (in contrast to the transient thermal response observed in infrared thermography), collection times can be lengthened to whatever extent needed to achieve desired signal-to-noise ratios. Each image is digitized, and the resulting data are processed in several steps to obtain a true mid-infrared reflectance image. The raw image includes thermal radiation emitted by the specimen in addition to the desired reflected radiation. The thermal-radiation contribution is eliminated by subtracting the image obtained with the illumination off from the image obtained with the illumination on. A flat-field correction is then made to remove the effects of non-uniformities in the illumination level and pixel-to-pixel variations in sensitivity. This correction is performed by normalizing to an image of a standard object that has a known reflectance at a wavelength of 4 microns. After correction, each pixel value is proportional to the reflectance (at a wavelength of 4-microns) at the corresponding location on the specimen. Mid-infrared reflectance imaging of specimens that were thermally cyc led for different numbers of cycles was performed and demonstrated t hat mid-infrared reflectance imaging was able to monitor the gradual delamination progression that occurs with continued thermal cycling . Reproducible values were obtained for the reflectance associated w ith an attached and fully delaminated TBC, so that intermediate refle ctance values could be interpreted to successfully predict the numbe r of thermal cycles to failure.

New observations on the Ni-Co ores of the southern Arburese Variscan district (SW Sardinia, Italy)

NASA Astrophysics Data System (ADS)

Naitza, Stefano; Secchi, Francesco; Oggiano, Giacomo; Cuccuru, Stefano

2015-04-01

Among the European Variscan regions, the Arburese district, located in the Paleozoic basement of SW Sardinia (Italy) is remarkable for its metallogenic complexity, and offers good opportunities to investigate time/space and genetic links between post-collisional Variscan intrusive magmatism and mineral deposits. The district hosts a large variety of mineral deposits and occurrences, which include the Pb-Zn (Cu, Ag) mesothermal veins of the Montevecchio Lode System, one of the largest and richest Variscan hydrothermal ore deposit of Europe, now exhausted. Ore deposits are genetically related to the emplacement of the Late Variscan (304±1 Ma) Arbus Pluton, a granitoid composite intrusion ranging from monzogabbroic to granodioritic and to peraluminous leucogranitic rock-types. After more than a century of geological studies in the area, several metallogenic issues are still unresolved; among them, the occurrence in the southern sectors of little known polymetallic Ni-Co-(Pb-Zn-Cu-Ag-Bi) veins, a kind of mineralization quite unusual for the Sardinian basement. These hydrothermal deposits are hosted by very low-grade metamorphic rocks at short distance from the intrusion, where contact effect generate also hornfels. Spatial, structural and textural characters of the hydrothermal system are coherent and in apparent continuity with those of the Montevecchio Lode System. Ni-Co ores are hosted by a system of parallel, 1-2 m thick high-angle veins that discontinuously follow the southwestern and southern contacts of the Arbus Pluton for about 7 km. They constantly dip SSW, sideways with respect to the pluton contact, and show a prevalence of fracture infilling (banded and brecciated) textures, with alternating quartz and siderite bands, cockades and frequent inclusions of wallrock fragments. Wallrocks are usually silicified, bleached and/or sericitized. Systematic studies of ore textures and parageneses from different veins along the system have been performed by standard ore microscopy and SEM-EDS. Ore minerals associations include Ni-Co (Fe, Sb) arsenides/sulfoarsenides (nickeline, rammelsbergite, skutterudite, safflorite, gersdorffite, breithauptite, lollingite, cobaltite), Pb-Zn-Cu-Ag-Bi sulfides (galena, sphalerite, chalcopyrite, tetrahedrite/freibergite, bismuthinite, proustite/pyrargirite, stephanite), native Bi and native Ag. Ore textures and mineral phases relationships allow to envisage the following paragenetic sequence: 1) deposition of quartz (I) and a Ni monoarsenide (nickeline), and antimonide (breithauptite) followed by 2) Ni-,Ni-Co, Co- and Fe- di-, tri- arsenides and sulfoarsenides (rammelsbergite, skutterudite, safflorite, löllingite, cobaltite), with bismuthinite and native Bi; 3) deposition of abundant siderite, with quartz (II), Pb-Zn-Cu-Ag sulfides and sulfosalts and rare native Ag, followed at last by 4) calcite. This sequence depicts a polyphased evolution with alternating gradual and abrupt changes of the physicochemical parameters of a mesothermal fluid initially characterized by Ni-As-(Sb) contents, subsequently evolved to higher contents of As, Co and Bi, and, finally, enriched in S, allowing Pb, Zn, Cu deposition as sulfides and sulfosalts.Thus, the fine alternating rims of pure nickeline (NiAs) and breithauptite (NiSb) in nickeline individuals, detected by SEM-EDS, may be explained by repeated compositional re-equilibrations due to variable As and Sb contents of the fluids; increases in As, and, moreover, the sudden appearance of siderite and sulfides after brecciations indicate further re-opening of the system, related to hydrothermal fracturing and syn-depositional tectonics.

Indium antimonide quantum well structures for electronic device applications

NASA Astrophysics Data System (ADS)

Edirisooriya, Madhavie

The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth on GaAs substrates that are oriented 2° away from the [011] direction. Chapter 3 discusses designing InSb QW layer structures that are strain balanced. By applying these defect-reducing techniques, the electron mobility in InSb quantum wells at room temperature was significantly increased. For complementary logic technology, p-channel transistors with high mobility are equally as important as n-channel transistors. However, achieving a high hole mobility in III-V semiconductors is challenging. A controlled introduction of strain in the quantum-well material is an effective technique for enhancing the hole mobility beyond its value in bulk material. The strain reduces the hole effective mass by splitting the heavy hole and light hole valence bands. Chapter 4 discusses a successful attempt to realize p-type InSb quantum well structures. The biaxial strain applied via a relaxed metamorphic buffer resulted in a significantly higher room-temperature hole mobility and a record high low-temperature hole mobility. To demonstrate the usefulness of high mobility in a device structure, magnetoresistive devices were fabricated from remotely doped InSb QWs. Such devices have numerous practical applications such as position and speed sensors and as read heads in magnetic storage systems. In a magnetoresistive device composed of a series of shorted Hall bars, the magnetoresistance is proportional to the electron mobility squared for small magnetic fields. Hence, the high electron mobility in InSb QWs makes them highly preferable for geometrical magnetoresistors. Chapter 5 reports the fabrication and characterization of InSb quantum-well magnetoresistors. The excellent transport properties of the InSb QWs resulted in high room-temperature sensitivity to applied magnetic fields. Finally, Chapter 6 provides the conclusions obtained during this research effort, and makes suggestions for future work.

Gamma-Ray Bursts: Lighting Up the High-Redshift Universe

NASA Astrophysics Data System (ADS)

Toy, Vicki Louise

Gamma-ray bursts (GRBs) are the most luminous events in the Universe with Egamma,iso ˜ 1048-54 erg. Leading models hypothesize that GRBs are created from inter- nal collisions within collimated and ultrarelativistic jets. The jets then shock-heat the surrounding material (e.g. interstellar medium) to create GRB afterglows. These afterglows are extremely useful probes of the Universe because long GRBs are (1) bright events that can be used as backlights for absorption studies, (2) able to probe at all redshifts massive stars exist, and (3) transient events that allow us to follow- up on the host galaxies at late times. In this thesis we study the environments of GRBs. We first explore the relationship between GRB and supernova (SN) using a nearby GRB-SN (GRB 130702A/SN 2013dx) at z = 0.145. There are only nine other GRB-SNe that were close enough to have extensive spectroscopic and photometric follow-up of the SN at late times. We create a quasi-bolometic light curve of SN 2013dx and fit an analytical equation to the quasi-bolometric light curve combined with measurements of the photospheric velocity to determine SN parameters: mass of 56Ni, kinetic energy, and ejecta mass. We examine the relationship between SN parameters and E gamma,iso for the 10 well-studied GRB-SNe, but find no correlations despite numerical simulation predictions that the mass of 56Ni should correlate with the degree of asymmetry. We then move to larger distance scales and use GRB afterglows as bright back- lights to study distant galaxies. We examine the galactic environments of Damped Lyman-alpha systems (DLAs; NHI ≥ 1020.3 cm-2 ) identified with GRB afterglows at z ˜ 2 - 6. We use late-time photometry after the GRB afterglow has faded to determine star formation rates (SFRs) from rest-frame ultraviolet measurements or spectral energy distribution (SED) models from multiband photometry. We com- pare our sample's SFRs to a sample of quasars (QSOs) DLA host galaxies. Despite the overlapping NHI and redshift ranges, our GRB-DLA galaxies have much larger SFRs than the QSO-DLA host galaxy sample; this may suggest that the QSO-DLA and GRB-DLA galaxy populations are different. We also compare star formation efficiencies to the local Universe and simulations at z = 3. A large portion of this thesis has focused on the development of a new ground- based GRB afterglow follow-up instrument, the Rapid infrared IMAger-Spectrometer (RIMAS), that will target high-redshift GRB afterglows to study early galaxy envi- ronments. RIMAS covers 0.97-2.37 mum and can simultaneously observe two band-passes in any observing mode: photometry, low-resolution spectroscopy (R ˜ 30), or high-resolution spectroscopy (R ˜ 4000). In particular, this thesis focuses on RIMAS's three detectors: two science grade Teledyne HgCdTe Astronomy Wide Area Infrared Imager with 2K x 2K, Reference Pixels and Guide Mode (H2RG) and a slit-viewer Spitzer Legacy Indium-Antimonide (InSb) array. We describe the detector hardware and characterization in detail and discuss general infrared detector troubleshooting methods at both cryogenic and room temperatures. Several software packages have been developed for RIMAS throughout this thesis work. We introduce RIMAS's quick reduction pipeline that takes raw images from a single acquisition and returns a single result frame. We then present a generalized data reduction pipeline that we have tested on two currently operational photometers. We also describe our detailed and realistic RIMAS throughput models for all three observing modes as well as our online observer calculators with these throughput models. All of our data products are open source and are publicly available on Github repositories with detailed documentation.

Recent progress in development of infrared laser based instruments for real-time ambient measurements of isotopologues of carbon dioxide, water, methane, nitrous oxide and carbon monoxide

NASA Astrophysics Data System (ADS)

Nelson, David; McManus, Barry; Shorter, Joanne; Zahniser, Mark; Ono, Shuhei

2014-05-01

The capacity for real time precise in situ measurements of isotopic ratios of a variety of trace gases at ambient concentrations continues to create new opportunities for the study of the exchanges and fluxes of gases in the environment. Aerodyne Research has made rapid progress in laser based instruments since our introduction in 2007 of the first truly field worthy instrument for real time measurements of isotopologues of carbon dioxide. We have focused on two instrument design platforms, with either one or two lasers. Absorption cells with more than 200 meters path length allow precise measurements of trace gases with low ambient concentrations. Most of our systems employ mid infrared quantum cascade lasers. However, recently available 3 micron antimonide based diode lasers are also proving useful for isotopic measurements. By substituting different lasers and detectors, we can simultaneously measure the isotopic composition of a variety of gases, including: H2O, CO2, CH4, N2O and CO. Our newest instrument for true simultaneous measurement of isotopologues of CO2 (12CO2, 13CO2, 12C18O16O) has (1 s) precision better than 0.1 per mil for both ratios. The availability of 10 Hz measurements allows measurement of isotopic fluxes via eddy correlation. The single laser instrument fits in a 19 inch rack and is only 25 cm tall. A two laser instrument is larger, but with that instrument we can also measure clumped isotopes of CO2, with 1 second precisions of: 2.3 per mil for 13C18O16O, and 6.7 per mil for 13C17O16O. The sample size for such a measurement corresponds to 0.2 micromole of pure CO2. Another variation on the two laser instrument simultaneously measures isotopologues of CO2 (12CO2, 13CO2, 12C18O16O) and H2O (H216O, H218O, HD16O). Preliminary results for water ratio precisions (in 1s) are 0.1 per mil for H218O and 0.3 per mil for HD16O, simultaneous (1 s) precisions for isotopologues of CO2 of ~0.1 per mil. Methane, nitrous oxide and carbon monoxide have such low ambient concentrations that real-time isotopologue measurements are a serious challenge. For these gases, we typically use our 200 m absorption cell. Several of these instruments have already been used for long term field measurements of isotopologues of methane, (12CH4, 13CH4), with a demonstrated (1 s) precision of 1.5 per mil. A new version of this instrument operating near 3.3 microns has recently been developed to quantify 13CH4 and CH3D simultaneously. In separate experiments at MIT, using trapped concentrated samples, we have made highly precise measurements of the abundance of the clumped isotope of methane: 13CH3D. We are also developing methods to monitor the isotopic abundance of the isotopes of CO and N2O. We have achieved a measurement precision for ambient 13CO (1 s) of 1.9 per mil. For the isotopologues of N2O (14N216O, 14N15N 16O, 15N14N 16O, 14N218O), we have demonstrated (1 s) precision at ambient levels (320 ppb) of ~3 per mil. For N2O, a quasi continuous preconcentrator has been used to give even better precisions (<0.1 per mil) and one is being developed for CO.

The Evolution of Surface Symmetry in Femtosecond Laser-Induced Transient States of Matter

NASA Astrophysics Data System (ADS)

Garnett, Joy Carleen

Gallium arsenide and other III-V materials are well known for their excellent optical and electronic properties and have led to the development of high-performance photovoltaic cells1,2, photoelectrochemical water splitting3,4, and light emitting diodes (LEDs)5. Several combinations of III-V semiconductors are now being considered as potentially attractive alternatives to silicon for these applications. However, further development requires fundamental understanding of processes that govern light-matter interactions. Specifically, surface strain and ultrafast dynamics are of great interest to the optoelectronic industry. Strained semiconductor surfaces dominate the design of optoelectronics and III-V semiconductor-based LEDs. Currently, the structures of strained surfaces are well characterized with x-ray diffraction (XRD)6 and electron crystallography7-9. However, optically-induced electronic behavior at these interfaces are not fully understood. This has the been one of the stimulants for the research in this dissertation. To further explore opticallyinduced electronic behavior at strained interfaces, I have asked the following questions: 1. How does static optoelectronic behavior change as a function of strain? 2. How does surface symmetry and electronic motion change with respect to strain? 3. How do atomic bonds change as a function of strain? Another main research goal of this work is to understand ultrafast subpicosecond processes after pulsed laser excitation. The knowledge of ultrafast processes dominates the design of devices in industries that require high temporal and spectral resolution. Ultrafast atomic motion has been the major focus of subpicosecond structural dynamics. Currently, these dynamics upon photoexcitation are well characterized with experimental methods such as ultrafast x-ray diffraction (U-XRD), ultrafast electron diffraction (UED), and ultrafast electron crystallography (UEC). However, ultrafast atomic motion does not occur alone. The bonds connecting these moving atoms are also affected during this process. The correlation between structural and electronic dynamics is not well understood. To further explore correlated structural and electronic behavior upon ultrafast laser excitation, I have asked the following questions: 1. How does subpicosecond optoelectronic behavior change as a function of time after femtosecond pulse photoexcitation? 2. How does subpicosecond surface symmetry and electronic motion change with respect to time after femtosecond pulse photoexcitation? 3. How do atomic bonds change as a function of time after femtosecond pulse photoexcitation? To address these questions, I used experimental methods sensitive to both atomic motions and electronic responses: polarization-resolved second harmonic generation (PRSHG) and timeresolved, polarization-resolved second harmonic generation (TRPRSHG). The dissertation covers application of these techniques to III-V semiconductors: gallium arsenide (GaAs), gallium antimonide (GaSb), and aluminum gallium arsenide (AlGaAs). This dissertation is organized as follows. Chapter 2 presents the background of electronic band structures, ultrafast relaxation processes, and the origin of nonlinear optics from the perspectives of classical and quantum mechanics. It thus provides a framework for the static and transient nonlinear optical processes observed in III-V semiconductors under ultrafast pulse excitation. Next, Chapter 3 motivates the use of the experimental and analytical methods as applied to the experimental and theoretical studies outlined in Chapters 4 and 5. Chapter 4 is devoted to the understanding of polarization-resolved second-order nonlinear optical responses of various strained III-V semiconductor heterostructures resulting from defect-conducive growth conditions. Simplified phenomenological expressions for the polarization-resolved second harmonic generation (PRSHG) are first derived using tensor analysis. Afterwards, these expressions are used to fit experimental data. The developed formalism is tested under different conditions to gauge the fit robustness and sensitivity to mechanical and electronic changes in strained IIIV semiconductors. Along that same vein, Chapter 5 extends this analytical fit to describe ultrafast PRSHG responses of GaAs (100) as a function of transient changes in the interatomic potential within the first picosecond after photoexcitation. Finally, the dissertation concludes with Chapter 6 addressing possible directions for future work. The chapter begins with a description of studies to further test the sensitivity and robustness of the PRSHG phenomenological fit and how it can be used to characterize more classes of materials.

Theoretical design and material growth of Type-II Antimonide-based superlattices for multi-spectral infrared detection and imaging

NASA Astrophysics Data System (ADS)

Hoang, Anh Minh

Infrared detectors find applications in many aspects of life, from night vision, target tracking for homeland security and defense, non-destructive failure detection in industry, chemical sensing in medicine, and free-space communication. Currently, the dominant technologies of photodetectors based upon HgCdTe and InSb are experiencing many limitations. Under this circumstance, the Type-II InAs/GaSb/AlSb superlattices which have been intensively studied recently appear to be an excellent candidate to give breakthroughs in the infrared technology. The Type-II SLs with theirs advantages such as great flexibility in bandgap engineering, high carrier effective mass, Auger recombination suppression and high uniformity have shown excellent device performance from MWIR to VLWIR. In the era of the third generation for infrared cameras, Type-II SLs are entering the new phase of development with high performance and multi-spectral detection. The goal of this work is to investigate quantum properties of the superlattice system, design appropriate device architectures and experimentally fabricate infrared detectors which can push further the limit of this material system and outperform existing competing technologies. The binary-binary InAs/GaSb superlattice has gone through much transformation over the years. Incorporating compounds lattice matched to the 6.1A family has invited more possibilities to band engineer the Type-II SLs. For the first time, by employing all three members of this material system, we have designed a new superlattice structure and demonstrated shortwavelength infrared (SWIR) photodiodes based on Type-II InAs/GaSb/AlSb with high electrical and optical performance. The photodiodes exhibited a quantum efficiency of 60% with very low dark current, can be operated at room temperature. In addition to the range of MWIR to VLWIR, a new channel of detection has been added to the GaSb based type-II SL material system. The new realization of SWIR photodiodes has led to the possibility of incorporating this channel to the multi-spectral detection. By combining with the MWIR channel, dual-band SWIR-MWIR photodiodes and focal plane arrays have been demonstrated, giving the capability of delivering both active and passive imaging in one single camera. Dual-band SWIR-MWIR photodiodes with quantum efficiency more than 50% for each channel has been achieved. Just like visible imaging, besides the available dual-band detection, the prospect of incorporating the third infrared waveband detection is very promising for a wide range of applications. However, the challenges for making such devices are so many that little success has been achieved. In the work, we also propose a new approach in device design to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetector based on InAs/GaSb/AlSb type-II superlattice. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. For the first time, we demonstrate experimentally Type-II superlattice based three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. While retaining the simplicity in device fabrication, this demonstration opens the new prospect for three-color infrared imaging. Finally, for further improvement, we are looking toward new type-II material called InAs/InAsSb superlattices. Theoretical design and growth techniques have been developed to investigate the properties of this material. We successfully demonstrated the design and growth of MWIR to VLWIR photodiodes based on Type-II InAs/InAsSb with high performance. Given the fact that these two Type-II material systems share the same GaSb substrate, a new incorporation could further fully exploit their advantages in the near future. Theoretical design, growth and optimization of device performance in each work are discussed.

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

NASA Astrophysics Data System (ADS)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p-channel MOSFETs. Band engineering, strain induced valence band splitting and quantum confinement is used to improve channel hole mobility. Experimental results on the Hall hole mobility is presented for InxGa1-xAs channels with varying In content, thickness of the quantum well and temperature. Then, high mobility InxGa 1-xAs heterostructure thus obtained are integrated with in-situ deposited high-k gate oxide required for high performance p-MOSFET and discuss the challenges associated with the gated structure and draw conclusions on this material system. Antimonide based channel materials such as GaSb and InxGa 1-xSb are explored for III-V based p-MOSFETs in last two chapters. Options for Sb based strained QW channels to obtain maximum hole mobility by varying the strain, channel and barrier material, thickness of the layers etc. is discussed followed by the growth of these Sb channels on GaAs and InP substrates using molecular beam epitaxy. The physical properties of the structures such as the heterostructure quality, alloy content and surface roughness are examined via TEM, XRD and AFM. Following this, electrical measurement results on Hall hole mobility is presented. The effect of strain, alloy content, temperature and thickness on channel mobility and concentration is reported. Development of GaSb n- and p-MOS capacitor structures with in-situ deposited HfO2 gate oxide dielectric using in-situ deposited amorphous Si (a-Si) interface passivation layer (IPL) to improve the interface quality of high-k oxide and (In)GaSb surface is presented. In-situ deposited gate oxides such as Al2O3 and combination oxide of Al 2O3 and HfO2 with and without the a-Si IPL are also explored as alternate gate dielectrics. Subsequently, MOS capacitor structures using buried InGaSb QWs are demonstrated. Development of an inversion type bulk GaSb with implanted source-drain contacts and in-situ deposited gate oxide HfO2 gate oxide is discussed. The merits of biaxial compressive strain is demonstrated on strained surface and buried channel In0.36 Ga0.64Sb QW MOSFETs with thin top barrier and in-situ deposited a-Si IPL and high-k HfO2 as well as combination Al 2O3+HfO2 gate stacks and ex-situ atomic layer deposited (ALD) combination gate oxide and with thin 2 nm InAs surface passivation layer is presented. Finally, summary of the salient results from the different chapters is provided with recommendations for future research.